Device-Relaying in Cellular D2D Networks: A Fairness Perspective

KAUST Repository

Chaaban, Anas; Sezgin, Aydin

2015-01-01

Device-to-Device (D2D) communication is envisioned to play a key role in 5G networks as a technique for meeting the demand for high data rates. In a cellular network, D2D allows not only direct communication between users, but also device relaying. In this paper, a simple instance of device-relaying is investigated, and its impact on fairness among users is studied. Namely, a cellular network consisting of two D2D-enabled users and a base-station (BS) is considered. Thus, the users who want to establish communication with the BS can act as relays for each other’s signals. While this problem is traditionally considered in the literature as a multiple-access channel with cooperation in the uplink, and a broadcast channel with cooperation in the downlink, we propose a different treatment of the problem as a multi-way channel. A simple communication scheme is proposed, and is shown to achieve significant gain in terms of fairness (measured by the symmetric rate supported) in comparison to the aforementioned traditional treatment.

36 CFR 2.20 - Skating, skateboards, and similar devices.

Science.gov (United States)

2010-07-01

... 36 Parks, Forests, and Public Property 1 2010-07-01 2010-07-01 false Skating, skateboards, and similar devices. 2.20 Section 2.20 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR RESOURCE PROTECTION, PUBLIC USE AND RECREATION § 2.20 Skating, skateboards, and...

Using Protection Layers for a 2-Photon Water Splitting Device

DEFF Research Database (Denmark)

Seger, Brian; Mei, Bastian Timo; Frydendal, Rasmus

2015-01-01

The 2-photon tandem device for photocatalytic water splitting has been theoretically shown to provide a higher efficiency than a single photon device(1). This increased efficiency can be achieved by having one material optimized to absorb high energy photons (large bandgap) and another material...... optimized to absorb low energy photons (small bandgap). To a large degree this approach has been hindered by corrosion issues. In this talk I will first discuss how our computational screening of 2,400 materials showed that very few materials can efficiently absorb light without corroding in water splitting...

Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

Science.gov (United States)

Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

2014-11-01

In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

Achieving tunable doping of MoSe2 based devices using GO@MoSe2 heterostructure

Science.gov (United States)

Maji, Tuhin Kumar; Tiwary, Krishna Kanhaiya; Karmakar, Debjani

2017-05-01

Doping nature of MoSe2, one of the promising Graphene analogous device material, can be tuned by controlling the concentration of functional groups in Graphene oxide (GO)@MoSe2 heterostructure. In this study, by first-principles simulation, we have observed that GO can be used as a carrier injection layer for MoSe2, where n or p type carriers are introduced within MoSe2 layer depending on the type and concentration of functional moieties in it. Both n and p-type Schottky barrier height modulations are investigated for different modeled configurations of the heterostructure. This combinatorial heterostructure can be a promising material for future electronic device application.

Evaluation of 2 new optical biometry devices and comparison with the current gold standard biometer.

Science.gov (United States)

Chen, Yen-An; Hirnschall, Nino; Findl, Oliver

2011-03-01

To compare 2 new optical biometry devices with the present gold standard biometer. Vienna Institute for Research in Ocular Surgery, Department of Ophthalmology, Hanusch Hospital, Vienna, Austria. Evaluation of diagnostic test or technology. In patients scheduled for cataract surgery, measurements performed with the current gold standard optical biometer (IOLMaster) were compared with those of 2 new optical biometers, the Lenstar LS 900 (optical low-coherence reflectometry [OLCR] device; substudy 1) and the IOLMaster 500 (partial coherence interferometry [PCI] device; substudy 2). The duration of patient data entry and of the actual measurement process and the time from intraocular lens power calculation to printout were calculated. The mean difference in axial length measurements was 0.01 mm ± 0.05 (SD) between the gold standard device and the new OLCR device and 0.01 ± 0.02 mm between the gold standard device and the new PCI device (P=.12 and P gold standard device (mean difference 209 ± 127 seconds), and measurements with the gold standard device took significantly longer than with the new PCI device (mean difference 82 ± 46 seconds) (both P gold standard device. Measurements with the new OLCR device took twice as long as those with the gold standard device. Copyright © 2011 ASCRS and ESCRS. Published by Elsevier Inc. All rights reserved.

Y2K embedded device issues in the oilpatch

International Nuclear Information System (INIS)

Lovatt, M.

1998-01-01

Information on the background of the year 2000 (Y2K) problem in process control systems in the oil and gas industry was presented. The problem, which stems from a date related malfunction, could result in a series of computer failures. Examples of the type of failures that process control devices at an electricity generating plant may experience as a result of the date change to the year 2000 ( rollover, leap year, special codes) were illustrated. The benefits of a shared process across the industry for testing and evaluating the potential for failure were stressed. As a general methodology for solving Y2K problems, an inventory should be taken to identify all items that may have date related aspects and to plan a strategy for remediation. The 'JumpStart' database has been developed as a tool for sharing information and to help businesses to move quickly through the assessment strategy phase of their Y2K projects. At present, this database contains over 41,000 separate items from over 5000 manufacturers. Since the beginning of collecting data for this database only 10 to 15 per cent of the devices showed any type of date-related failure, and only one to five per cent of these was a critical failure. Several examples of how devices fail are provided. 1 fig

Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus.

Science.gov (United States)

Gao, Guoyun; Wan, Bensong; Liu, Xingqiang; Sun, Qijun; Yang, Xiaonian; Wang, Longfei; Pan, Caofeng; Wang, Zhong Lin

2018-03-01

With the Moore's law hitting the bottleneck of scaling-down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self-powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual-gate logic device based on a MoS 2 field-effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm -1 . Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low-power-consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human-machine interfacing, data processing and transmission. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

Science.gov (United States)

Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

2014-10-08

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

Atomic-layer deposited IrO2 nanodots for charge-trap flash-memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Cha, Young-Kwan; Seo, Bum-Seok; Park, Sangjin; Park, Ju-Hee; Shin, Sangmin; Seol, Kwang Soo; Park, Jong-Bong; Jung, Young-Soo; Park, Youngsoo; Park, Yoondong; Yoo, In-Kyeong; Choi, Suk-Ho

2007-01-01

Charge-trap flash- (CTF) memory structures have been fabricated by employing IrO 2 nanodots (NDs) grown by atomic-layer deposition. A band of isolated IrO 2 NDs of about 3 nm lying almost parallel to Si/SiO 2 interface is confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy. The memory device with IrO 2 NDs shows much larger capacitance-voltage (C-V) hysteresis and memory window compared with the control sample without IrO 2 NDs. After annealing at 800 deg. C for 20 min, the ND device shows almost no change in the width of C-V hysteresis and the ND distribution. These results indicate that the IrO 2 NDs embedded in SiO 2 can be utilized as thermally stable, discrete charge traps, promising for metal oxide-ND-based CTF memory devices

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

Science.gov (United States)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

Science and Emerging Technology of 2D Atomic Layered Materials and Devices

Science.gov (United States)

2017-09-09

AFRL-AFOSR-JP-TR-2017-0067 Science & Emerging Technology of 2D Atomic Layered Materials and Devices Angel Rubio UNIVERSIDAD DEL PAIS VASCO - EUSKAL...DD-MM-YYYY)      27-09-2017 2.  REPORT TYPE      Final 3.  DATES COVERED (From - To)      19 Feb 2015 to 18 Feb 2017 4.  TITLE AND SUBTITLE Science ...reporting documents for AOARD project 144088, “2D Materials and Devices Beyond Graphene Science & Emerging Technology of 2D Atomic Layered Materials and

Thermal management in MoS{sub 2} based integrated device using near-field radiation

Energy Technology Data Exchange (ETDEWEB)

Peng, Jiebin [Department of Physics, National University of Singapore, Singapore 117546 (Singapore); Zhang, Gang, E-mail: zhangg@ihpc.a-star.edu.sg [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore); Li, Baowen [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States)

2015-09-28

Recently, wafer-scale growth of monolayer MoS{sub 2} films with spatial homogeneity is realized on SiO{sub 2} substrate. Together with the latest reported high mobility, MoS{sub 2} based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS{sub 2}, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS{sub 2} to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS{sub 2} and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS{sub 2} sheet. Therefore, an efficient thermal management strategy for MoS{sub 2} integrated device is proposed: Graphene sheet is brought into close proximity, 10–20 nm from MoS{sub 2} device; heat energy transfer from MoS{sub 2} to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.

A feasibility analysis of replacing the standard ammonia refrigeration device with the cascade NH3/CO2 refrigeration device in the food industry

Directory of Open Access Journals (Sweden)

Jankovich Dennis

2015-01-01

Full Text Available The thermodynamic analysis demonstrates the feasibility of replacing the standard ammonia refrigeration device with the cascade NH3/CO2 refrigeration device in the food industry. The main reason for replacement is to reduce the total amount of ammonia in spaces like deep-freezing chambers, daily chambers, working rooms and technical passageways. An ammonia-contaminated area is hazardous to human health and the safety of food products. Therefore the preferred reduced amount of ammonia is accumulated in the Central Refrigeration Engine Room, where the cascade NH3/CO2 device is installed as well. Furthermore, the analysis discusses and compares two left Carnot¢s refrigeration cycles, one for the standard ammonia device and the other for the cascade NH3/CO2 device. Both cycles are processes with two-stage compression and two-stage throttling. The thermodynamic analysis demonstrates that the selected refrigeration cycle is the most cost-effective process because it provides the best numerical values for the total refrigeration factor with respect to the observed refrigeration cycle. The chief analyzed influential parameters of the cascade device are: total refrigeration load, total reactive power, mean temperature of the heat exchanger, evaporating and condensing temperature of the low-temperature part.

Magnetron sputtering fabrication and photoelectric properties of WSe2 film solar cell device

Science.gov (United States)

Mao, Xu; Zou, Jianpeng; Li, Hongchao; Song, Zhengqi; He, Siru

2018-06-01

Tungsten diselenide (WSe2) films with different growing orientations exhibit diverse photoelectric properties. The WSe2 film with C-axis⊥substrate texture has been prepared and applied to thin-film solar cells. W nanofilms with a thickness of 270 nm were deposited onto the Mo bottom electrode and then heat-treated in selenium vapor to synthesize WSe2 films with a thickness of 1 μm. ZnO films were deposited onto WSe2 films to form a P-N junction and ITO films were deposited subsequently as the conductive layer. X-ray diffractometry, scanning electron microscopy and UV-vis-NIR spectro-analysis instrument were employed to analyze the phase composition, optical absorptivity and micromorphology of WSe2 films and the WSe2 solar cell device. WSe2 films exhibit excellent photoelectric performance with an optical absorption coefficient greater than 105 cm-1 across the visible spectrum. The calculated direct and indirect band gap of the WSe2 films is 1.48 eV and 1.25 eV, respectively. With the application of standard glass/Mo/WSe2/ZnO/ITO/Ag device structure, the open-circuit voltage of the battery device is 82 mV. The short-circuit current density is 2.98 mA/cm2 and the filling factor is 0.32. The photoelectric conversion efficiency of the WSe2 film solar cell device is 0.79%.

Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations

OpenAIRE

Kang, J.; He, X.; Vasileska, D.; Schroder, D. K.

2001-01-01

Focused Ion Beam MOSFETs (FIBMOS) demonstrate large enhancements in core device performance areas such as output resistance, hot electron reliability and voltage stability upon channel length or drain voltage variation. In this work, we describe an optimization technique for FIBMOS threshold voltage characterization using the 2D Silvaco ATLAS simulator. Both ATLAS and 2D Monte Carlo particle-based simulations were used to show that FIBMOS devices exhibit enhanced current drive ...

Network-Assisted Device-to-Device (D2D) Direct Proximity Discovery with Underlay Communication

DEFF Research Database (Denmark)

Pratas, Nuno; Popovski, Petar

2015-01-01

) direct communication between proximate devices. While (ii) is treated extensively in the recent literature, (i) has received relatively little attention. In this paper we analyze a network-assisted underlay proximity discovery protocol, where a cellular device can take the role of: announcer (which......Device-to-Device communications are expected to play an important role in current and future cellular generations, by increasing the spatial reuse of spectrum resources and enabling lower latency communication links. This paradigm has two fundamental building blocks: (i) proximity discovery and (ii......, we consider the case where the announcers underlay their messages in the downlink transmissions that are directed towards the monitoring devices. We propose a power control scheme applied to the downlink transmission, which copes with the underlay transmission via additional power expenditure, while...

Radiometric weighing devices. Part 1 and 2

International Nuclear Information System (INIS)

Glaeser, M.

1985-01-01

Proceeding from the physical and mathematical fundamentals and from the types of radiometric weighing devices presently available, the radiation protection problems arising from the application of radiometric gages in industry and agriculture are discussed. Nuclear weighing devices have been found to be effective from economic point of view but in some cases gravimetric conveyor weighers are indispensable. Information and guidance is given especially for users of radiometric weighing devices. 91 refs., 69 figs., and 8 tabs

A new device for continuous monitoring the CO2 dissolved in water

Science.gov (United States)

de Gregorio, S.; Camarda, M.; Cappuzzo, S.; Giudice, G.; Gurrieri, S.; Longo, M.

2009-04-01

The measurements of dissolved CO2 in water are common elements of industrial processes and scientific research. In order to perform gas dissolved measurements is required to separate the dissolved gaseous phase from water. We developed a new device able to separate the gases phase directly in situ and well suitable for continuous measuring the CO2 dissolved in water. The device is made by a probe of a polytetrafluorethylene (PTFE) tube connected to an I.R. spectrophotometer (I.R.) and a pump. The PTFE is a polymeric semi-permeable membrane and allows the permeation of gas in the system. Hence, this part of the device is dipped in water in order to equilibrate the probe headspace with the dissolved gases. The partial pressure of the gas i in the headspace at equilibrium (Pi) follows the Henry's law: Pi=Hi•Ci, where Hi is the Henry's constant and Ci is the dissolved concentration of gas i. After the equilibrium is achieved, the partial pressure of CO2 inside the tube is equal to the partial pressure of dissolved CO2. The concentration of CO2 is measured by the I.R. connected to the tube. The gas is moved from the tube headspace to the I.R. by using the pump. In order to test the device and assess the best operating condition, several experimental were performed in laboratory. All the test were executed in a special apparatus where was feasible to create controlled atmospheres. Afterward the device has been placed in a draining tunnel sited in the Mt. Etna Volcano edifice (Italy). The monitored groundwater intercepts the Pernicana Fault, along which degassing phenomena are often observed. The values recorded by the station result in agreement with monthly directly measurements of dissolved CO2 partial pressure.

Rapid fabrication of Al{sub 2}O{sub 3} encapsulations for organic electronic devices

Energy Technology Data Exchange (ETDEWEB)

Ali, Kamran; Ali, Junaid [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Mehdi, Syed Murtuza [Department of Mechanical Engineering, NED University of Engineering and Technology, Karachi 75270 (Pakistan); Choi, Kyung-Hyun, E-mail: amm@jejunu.ac.kr [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); An, Young Jin [Jeonnam Science and Technology Promotion Center, Yeongam-gun, Jeollanam-do 526-897 (Korea, Republic of)

2015-10-30

Highlights: • Al{sub 2}O{sub 3} encapsulations are being developed through a unique R2R-AALD system. • The encapsulations have resulted in life time enhancement of PVP memristor devices. • The Al{sub 2}O{sub 3} encapsulated memristor performed with superior stability for four weeks. • Encapsulated devices performed efficiently even after bending test for 100 cycles. - Abstract: Organic electronics have earned great reputation in electronic industry yet they suffer technical challenges such as short lifetimes and low reliability because of their susceptibility to water vapor and oxygen which causes their fast degradation. This paper report on the rapid fabrication of Al{sub 2}O{sub 3} encapsulations through a unique roll-to-roll atmospheric atomic layer deposition technology (R2R-AALD) for the life time enhancement of organic poly (4-vinylphenol) (PVP) memristor devices. The devices were then categorized into two sets. One was processed with R2R-AALD Al{sub 2}O{sub 3} encapsulations at 50 °C and the other one was kept as un-encapsulated. The field-emission scanning electron microscopy (FESEM) results revealed that pin holes and other irregularities in PVP films with average arithmetic roughness (R{sub a}) of 9.66 nm have been effectively covered by Al{sub 2}O{sub 3} encapsulation having R{sub a} of 0.92 nm. The X-ray photoelectron spectroscopy XPS spectrum for PVP film showed peaks of C 1s and O 1s at the binding energies of 285 eV and 531 eV, respectively. The respective appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, confirms the fabrication of Al{sub 2}O{sub 3} films. Electrical current–voltage (I–V) measurements confirmed that the Al{sub 2}O{sub 3} encapsulation has a huge influence on the performance, robustness and life time of memristor devices. The Al{sub 2}O{sub 3} encapsulated memristor performed with superior stability for four weeks whereas the un-encapsulated devices could only last for one

A comprehensive model on field-effect pnpn devices (Z2-FET)

Science.gov (United States)

Taur, Yuan; Lacord, Joris; Parihar, Mukta Singh; Wan, Jing; Martinie, Sebastien; Lee, Kyunghwa; Bawedin, Maryline; Barbe, Jean-Charles; Cristoloveanu, Sorin

2017-08-01

A comprehensive model for field-effect pnpn devices (Z2-FET) is presented. It is based on three current continuity equations coupled to two MOS equations. The model reproduces the characteristic S-shaped I-V curve when the device is driven by a current source. The negative resistance region at intermediate currents occurs as the center junction undergoes a steep transition from reverse to forward bias. Also playing a vital role are the mix and match of the minority carrier diffusion current and the generation recombination current. Physical insights to the key mechanisms at work are gained by regional approximations of the model, from which analytical expressions for the maximum and minimum voltages at the switching points are derived. From 1981 to 2001, he was with the Silicon Technology Department of IBM Thomas J. Watson Research Center, Yorktown Heights, New York, where he was Manager of Exploratory Devices and Processes. Areas in which he has worked and published include latchup-free 1-um CMOS, self-aligned TiSi2, 0.5-um CMOS and BiCMOS, shallow trench isolation, 0.25-um CMOS with n+/p + poly gates, SOI, low-temperature CMOS, and 0.1-um CMOS. Since October 2001, he has been a professor in the Department of Electrical and Computer Engineering, University of California, San Diego. Dr. Yuan Taur was elected a Fellow of the IEEE in 1998. He has served as Editor-in-Chief of the IEEE Electron Device Letters from 1999 to 2011. He authored or co-authored over 200 technical papers and holds 14 U.S. patents. He co-authored a book, ;Fundamentals of Modern VLSI Devices,; published by Cambridge University Press in 1998. The 2nd edition was published in 2009. Dr. Yuan Taur received IEEE Electron Devices Society's J. J. Ebers Award in 2012 ;for contributions to the advancement of several generations of CMOS process technologies.;

Virtual MIMO Beamforming and Device Pairing Enabled by Device-to-Device Communications for Multidevice Networks

Directory of Open Access Journals (Sweden)

Yeonjin Jeong

2017-01-01

Full Text Available We consider a multidevice network with asymmetric antenna configurations which supports not only communications between an access point and devices but also device-to-device (D2D communications for the Internet of things. For the network, we propose the transmit and receive beamforming with the channel state information (CSI for virtual multiple-input multiple-output (MIMO enabled by D2D receive cooperation. We analyze the sum rate achieved by a device pair in the proposed method and identify the strategies to improve the sum rate of the device pair. We next present a distributed algorithm and its equivalent algorithm for device pairing to maximize the throughput of the multidevice network. Simulation results confirm the advantages of the transmit CSI and D2D cooperation as well as the validity of the distributive algorithm.

QoE-Aware Device-to-Device Multimedia Communications

Directory of Open Access Journals (Sweden)

Liang ZHOU

2015-08-01

Full Text Available Multimedia services over mobile device-to-device (D2D networks has recently received considerable attention. In this scenario, each device is equipped with a cellular communication interface, as well as a D2D interface over a shared medium. In this work, we study the performance properties of the mobile D2D communications in the framework of user satisfaction, and develop a fully distributed QoE-aware multimedia communication scheme (QAMCS. Specifically, we translate the opportunistic multimedia communications issue into a stochastic optimization problem, which opens up a new degree of performance to exploit. Moreover, QAMCS is designed for a heterogeneous and dynamic environment, in which user demand, device mobility, and transmission fashion may vary across different devices and applications. Importantly, QAMCS is able to maximize the user satisfaction and only needs each device to implement its own scheme individually in the absence of a central controller.

Efficient white organic light-emitting devices using a thin 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl layer

International Nuclear Information System (INIS)

Wang Jun; Yu Junsheng; Li Lu; Tang Xiaoqing; Jiang Yadong

2008-01-01

White organic light-emitting devices (OLEDs) were fabricated using phosphorescent material bis[2-(4-tert-butylphenyl)benzothiazolato-N,C 2' ]iridium (acetylacetonate) [(t-bt) 2 Ir(acac)] doped in 4,4'-bis(carbazol-9-yl) biphenyl (CBP) matrix as a yellow light-emitting layer and a thin layer 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl (DPVBi) as the blue light-emitting layer. The light colour of the OLEDs can be adjusted by changing doped concentration and the thickness of the DPVBi thin layer. The maximum luminance and power efficiency of 5% doped device reached 15 460 cd m -2 and 8.1 lm W -1 , respectively. The 3% doped device showed the CIE coordinates of (0.344, 0.322) at 8 V and a maximum power efficiency of 5.7 lm W -1 at 4.5 V

Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

Energy Technology Data Exchange (ETDEWEB)

Shinde, Sachin M.; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2014-12-07

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material as well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.

Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

Science.gov (United States)

Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

2017-12-01

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

Tm2+ luminescent materials for solar radiation conversion devices

NARCIS (Netherlands)

Van der Kolk, E.

2015-01-01

A solar radiation conversion device is described that comprises a luminescent Tm 2+ inorganic material for converting solar radiation of at least part of the UV and/or visible and/or infra red solar spectrum into infrared solar radiation, preferably said infrared solar radiation having a wavelength

Rectification induced in N2AA-doped armchair graphene nanoribbon device

International Nuclear Information System (INIS)

Chen, Tong; Wang, Ling-Ling; Luo, Kai-Wu; Xu, Liang; Li, Xiao-Fei

2014-01-01

By using non-equilibrium Green function formalism in combination with density functional theory, we investigated the electronic transport properties of armchair graphene nanoribbon devices in which one lead is undoped and the other is N 2 AA -doped with two quasi-adjacent substitutional nitrogen atoms incorporating pairs of neighboring carbon atoms in the same sublattice A. Two kinds of N 2 AA -doped style are considered, for N dopants substitute the center or the edge carbon atoms. Our results show that the rectification behavior with a large rectifying ratio can be found in these devices and the rectifying characteristics can be modulated by changing the width of graphene nanoribbons or the position of the N 2 AA dopant. The mechanisms are revealed to explain the rectifying behaviors.

Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

Science.gov (United States)

Zhu, Mengjian; Luo, Wei; Wu, Nannan; Zhang, Xue-ao; Qin, Shiqiao

2018-04-01

2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential for nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 is a critical step for realizing high performance devices. Here, we demonstrate Co/hBN tunnel contacts to few-layer MoTe2. In sharp contrast to the p-type conduction of Co contacted MoTe2, Co/hBN tunnel contacted MoTe2 devices show clear n-type transport properties. Our first principles calculation reveals that the inserted few-layer hBN strongly interacts with Co and significantly reduces its work-function by ˜1.2 eV, while MoTe2 itself has a much weaker influence on the work-function of Co. This allows us to build MoTe2 diodes using the mixed Co/hBN and Co contact architecture, which can be switched from p-n type to n-p type by changing the gate-voltage, paving the way for engineering multi-functional devices based on atomically thin 2D semiconductors.

Demo - Talk2Me: A Framework for Device–to–Device Augmented Reality Social Network

DEFF Research Database (Denmark)

Shu, Jiayu; Kosta, Sokol; Zheng, Rui

2018-01-01

–to–Device fashion. When a user looks at nearby persons through her camera–enabled wearable devices (e.g., Google Glass), the framework automatically extracts the face–signature of the person of interest, compares it with the previously captured signatures, and presents the information shared by this person......In this demo, we present Talk2Me, an augmented reality social network framework that enables users to disseminate information in a distributed way and view others’ information instantly. Talk2Me advertises users’ messages, together with their face–signatures, to every nearby device in a Device...... to the user. We design a lightweight and yet accurate face recognition algorithm, together with an efficient distributed dissemination protocol. We integrate their implementations in an Android prototype....

A large interconnecting network within hybrid MEH-PPV/TiO2 nanorod photovoltaic devices

International Nuclear Information System (INIS)

Zeng, T-W; Lin, Y-Y; Lo, H-H; Chen, C-W; Chen, C-H; Liou, S-C; Huang, H-Y; Su, W-F

2006-01-01

This is a study of hybrid photovoltaic devices based on TiO 2 nanorods and poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV). We use TiO 2 nanorods as the electron acceptors and conduction pathways. Here we describe how to develop a large interconnecting network within the photovoltaic device fabricated by inserting a layer of TiO 2 nanorods between the MEH-PPV:TiO 2 nanorod hybrid active layer and the aluminium electrode. The formation of a large interconnecting network provides better connectivity to the electrode, leading to a 2.5-fold improvement in external quantum efficiency as compared to the reference device without the TiO 2 nanorod layer. A power conversion efficiency of 2.2% under illumination at 565 nm and a maximum external quantum efficiency of 24% at 430 nm are achieved. A power conversion efficiency of 0.49% is obtained under Air Mass 1.5 illumination

Applied superconductivity. Handbook on devices and applications. Vol. 1 and 2

Energy Technology Data Exchange (ETDEWEB)

Seidel, Paul (ed.) [Jena Univ. (Germany). Inst. fuer Festkoerperphysik, AG Tieftemperaturphysik

2015-07-01

The both volumes contain the following 12 chapters: 1. Fundamentals; 2. Superconducting Materials; 3. Technology, Preparation, and Characterization (bulk materials, thin films, multilayers, wires, tapes; cooling); 4, Superconducting Magnets; 5. Power Applications (superconducting cables, superconducting current leads, fault current limiters, transformers, SMES and flywheels; rotating machines; SmartGrids); 6. Superconductive Passive Devices (superconducting microwave components; cavities for accelerators; superconducting pickup coils; magnetic shields); 7. Applications in Quantum Metrology (superconducting hot electron bolometers; transition edge sensors; SIS Mixers; superconducting photon detectors; applications at Terahertz frequency; detector readout); 8. Superconducting Radiation and Particle Detectors; 9. Superconducting Quantum Interference (SQUIDs); 10. Superconductor Digital Electronics; 11. Other Applications (Josephson arrays as radiation sources. Tunable microwave devices) and 12. Summary and Outlook (of the superconducting devices).

Applied superconductivity. Handbook on devices and applications. Vol. 1 and 2

International Nuclear Information System (INIS)

Seidel, Paul

2015-01-01

The both volumes contain the following 12 chapters: 1. Fundamentals; 2. Superconducting Materials; 3. Technology, Preparation, and Characterization (bulk materials, thin films, multilayers, wires, tapes; cooling); 4, Superconducting Magnets; 5. Power Applications (superconducting cables, superconducting current leads, fault current limiters, transformers, SMES and flywheels; rotating machines; SmartGrids); 6. Superconductive Passive Devices (superconducting microwave components; cavities for accelerators; superconducting pickup coils; magnetic shields); 7. Applications in Quantum Metrology (superconducting hot electron bolometers; transition edge sensors; SIS Mixers; superconducting photon detectors; applications at Terahertz frequency; detector readout); 8. Superconducting Radiation and Particle Detectors; 9. Superconducting Quantum Interference (SQUIDs); 10. Superconductor Digital Electronics; 11. Other Applications (Josephson arrays as radiation sources. Tunable microwave devices) and 12. Summary and Outlook (of the superconducting devices).

Suitability and repeatability of a photostress recovery test device, the macular test device, macular degeneration TEST DEVICE, detector (MDD-2), for diabetes and diabetic retinopathy assessment

LENUS (Irish Health Repository)

Loughman, James

2013-10-16

Diabetic retinopathy can result in impaired photostress recovery time despite normal visual acuity and fundoscopic appearance. The Macular Degeneration Detector (MDD-2) is a novel flash photostress recovery time device. In this study, we examine the repeatability of the MDD-2 in normal and diabetic subjects.

2nd International Conference on Intelligent Computing, Communication & Devices

CERN Document Server

Popentiu-Vladicescu, Florin

2017-01-01

The book presents high quality papers presented at 2nd International Conference on Intelligent Computing, Communication & Devices (ICCD 2016) organized by Interscience Institute of Management and Technology (IIMT), Bhubaneswar, Odisha, India, during 13 and 14 August, 2016. The book covers all dimensions of intelligent sciences in its three tracks, namely, intelligent computing, intelligent communication and intelligent devices. intelligent computing track covers areas such as intelligent and distributed computing, intelligent grid and cloud computing, internet of things, soft computing and engineering applications, data mining and knowledge discovery, semantic and web technology, hybrid systems, agent computing, bioinformatics, and recommendation systems. Intelligent communication covers communication and network technologies, including mobile broadband and all optical networks that are the key to groundbreaking inventions of intelligent communication technologies. This covers communication hardware, soft...

Thiol-modified MoS2 nanosheets as a functional layer for electrical bistable devices

Science.gov (United States)

Li, Guan; Tan, Fenxue; Lv, Bokun; Wu, Mengying; Wang, Ruiqi; Lu, Yue; Li, Xu; Li, Zhiqiang; Teng, Feng

2018-01-01

Molybdenum disulfide nanosheets have been synthesized by one-pot method using 1-ODT as sulfur source and surfactant. The structure, morphology and optical properties of samples were investigated by XRD, FTIR, Abs spectrum and TEM patterns. The XRD pattern indicated that the as-obtained MoS2 belong to hexagonal system. The as-obtained MoS2 nanosheets blending with PVK could be used to fabricate an electrically bistable devices through a simple spin-coating method and the device exhibited an obvious electrical bistability properties. The charge transport mechanism of the device was discussed based on the filamentary switching models.

Conductance switching in Ag(2)S devices fabricated by in situ sulfurization.

Science.gov (United States)

Morales-Masis, M; van der Molen, S J; Fu, W T; Hesselberth, M B; van Ruitenbeek, J M

2009-03-04

We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

Conductance switching in Ag2S devices fabricated by in situ sulfurization

International Nuclear Information System (INIS)

Morales-Masis, M; Molen, S J van der; Hesselberth, M B; Ruitenbeek, J M van; Fu, W T

2009-01-01

We report a simple and reproducible method to fabricate switchable Ag 2 S devices. The α-Ag 2 S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag 2 S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag 2 S, increasing the Ag + ion mobility. The as-fabricated Ag 2 S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

9 CFR 354.2 - Designation of official certificates, memoranda, marks, other identifications, and devices for...

Science.gov (United States)

2010-01-01

..., memoranda, marks, other identifications, and devices for purposes of the Agricultural Marketing Act. 354.2... Agricultural Marketing Act. Subsection 203(h) of the Agricultural Marketing Act of 1946, as amended by Pub. L... device means a stamping appliance, branding device, stencil, printed label, or any other mechanically or...

Performance and reliability of TPE-2 device with pulsed high power source

International Nuclear Information System (INIS)

Sato, Y.; Takeda, S.; Kiyama, S.

1987-01-01

The performance and the reliability of TPE-2 device with pulsed high power sources are described. To obtain the stable high beta plasma, the reproducibility and the reliability of the pulsed power sources must be maintained. A new power crowbar system with high efficiency and the switches with low jitter time are adopted to the bank system. A monitor system which always watches the operational states of the switches is developed too, and applied for the fast rising capacitor banks of TPE-2 device. The reliable operation for the bank has been realized, based on the data of switch monitor system

The influence of Ti doping and annealing on Ce_2Ti_2O_7 flash memory devices

International Nuclear Information System (INIS)

Kao, Chyuan Haur; Chen, Su Zhien; Luo, Yang; Chiu, Wang Ting; Chiu, Shih Wei; Chen, I Chien; Lin, Chan-Yu; Chen, Hsiang

2017-01-01

Highlights: • Ce_2Ti_2O_7 flash memories have been fabricated. • Material quality can be improved by annealing. • The memory performance can be enhanced by Ti doping. • Ti doping and annealing can reinforce crystallization. - Abstract: In this research, a CeO_2 film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce_2Ti_2O_7 trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce_2Ti_2O_7-based memory device is promising for future industrial flash memory applications.

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

International Nuclear Information System (INIS)

Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon

2007-01-01

In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge 2 Sb 2 Te 5 (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 μm. After the programming signals of more than 2x10 6 cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1x10 10 cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming

Effects of GeI2 or ZnI2 addition to perovskite CH3NH3PbI3 photovoltaic devices

Science.gov (United States)

Tanaka, Hiroki; Ohishi, Yuya; Oku, Takeo

2018-01-01

CH3NH3PbI3 added with GeI2 or ZnI2 perovskite photovoltaic devices were fabricated characterized. The surface coverages of the perovskite layers were improved by the addition of GeI2 or ZnI2. Formation of PbI2 observed for the pristine CH3NH3PbI3 was suppressed by the GeI2 or ZnI2 addition, which resulted in the improvement of the conversion efficiencies of the perovskite photovoltaic devices.

Fabrication of polystyrene microfluidic devices using a pulsed CO2 laser system

KAUST Repository

Li, Huawei

2013-10-10

In this article, we described a simple and rapid method for fabrication of droplet microfluidic devices on polystyrene substrate using a CO2 laser system. The effects of the laser power and the cutting speed on the depth, width and aspect ratio of the microchannels fabricated on polystyrene were investigated. The polystyrene microfluidic channels were encapsulated using a hot press bonding technique. The experimental results showed that both discrete droplets and laminar flows could be obtained in the device.

Fabrication of polystyrene microfluidic devices using a pulsed CO2 laser system

KAUST Repository

Li, Huawei; Fan, Yiqiang; Foulds, Ian G.; Kodzius, Rimantas

2013-01-01

In this article, we described a simple and rapid method for fabrication of droplet microfluidic devices on polystyrene substrate using a CO2 laser system. The effects of the laser power and the cutting speed on the depth, width and aspect ratio of the microchannels fabricated on polystyrene were investigated. The polystyrene microfluidic channels were encapsulated using a hot press bonding technique. The experimental results showed that both discrete droplets and laminar flows could be obtained in the device.

Talk2Me: A Framework for Device–to–Device Augmented Reality Social Network

DEFF Research Database (Denmark)

Shu, Jiayu; Kosta, Sokol; Zheng, Rui

2018-01-01

, an augmented reality social network framework that enables users to disseminate information in a distributed way and view others’ information instantly. Talk2Me advertises users’ messages, together with their face–signature, to every nearby device in a Device–to–Device fashion. When a user looks at nearby...... persons through her camera–enabled wearable devices (e.g., Google Glass), the framework automatically extracts the face–signature of the person of interest, compares it with the previously captured signatures, and presents the information shared by this person to the user. We design and implement Talk2Me...... a novel face recognition algorithm for this specific scenario with a small number of face features and limited computing capability. Evaluation results of the prototype with real users and extensive simulations validate the performance and usability of our design, showing the potentials of the augmented...

Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

Science.gov (United States)

Qi, Yanfei; Zhao, Ce Zhou; Liu, Chenguang; Fang, Yuxiao; He, Jiahuan; Luo, Tian; Yang, Li; Zhao, Chun

2018-04-01

In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

Conducting mechanisms of forming-free TiW/Cu{sub 2}O/Cu memristive devices

Energy Technology Data Exchange (ETDEWEB)

Yan, P.; Li, Y.; Hui, Y. J.; Zhong, S. J.; Zhou, Y. X.; Xu, L.; Liu, N.; Qian, H.; Sun, H. J., E-mail: shj@mail.hust.edu.cn; Miao, X. S. [Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2015-08-24

P-type Cu{sub 2}O is a promising CMOS-compatible candidate to fabricate memristive devices for next-generation memory, logic and neuromorphic computing. In this letter, the microscopic switching and conducting mechanisms in TiW/Cu{sub 2}O/Cu memristive devices have been thoroughly investigated. The bipolar resistive switching behaviors without an electro-forming process are ascribed to the formation and rupture of the conducting filaments composed of copper vacancies. In the low resistive state, the transport of electrons in the filaments follows Mott's variable range hopping theory. When the devices switch back to high resistive state, the coexistence of Schottky emission at the Cu/Cu{sub 2}O interface and electron hopping between the residual filaments is found to dominate the conducting process. Our results will contribute to the further understanding and optimization of p-type memristive materials.

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.

Science.gov (United States)

Ko, Seungpil; Na, Junhong; Moon, Young-Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus

2017-12-13

Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

Delay reduction in multi-hop device-to-device communication using network coding

KAUST Repository

Douik, Ahmed S.; Sorour, Sameh; Al-Naffouri, Tareq Y.; Yang, Hong-Chuan; Alouini, Mohamed-Slim

2015-01-01

This paper considers the problem of reducing the broadcast delay of wireless networks using instantly decodable network coding (IDNC) based device-to-device (D2D) communications. In D2D-enabled networks, devices help hasten the recovery of the lost

Electron transport in all-Heusler Co2CrSi/Cu2CrAl/Co2CrSi device, based on ab-initio NEGF calculations

Science.gov (United States)

Mikaeilzadeh, L.; Pirgholi, M.; Tavana, A.

2018-05-01

Based on the ab-initio non-equilibrium Green's function (NEGF) formalism based on the density functional theory (DFT), we have studied the electron transport in the all-Heusler device Co2CrSi/Cu2CrAl/Co2CrSi. Results show that the calculated transmission spectra is very sensitive to the structural parameters and the interface. Also, we obtain a range for the thickness of the spacer layer for which the MR effect is optimum. Calculations also show a perfect GMR effect in this device.

Dynamic 2D-barcodes for multi-device Web session migration including mobile phones

DEFF Research Database (Denmark)

Alapetite, Alexandre

2010-01-01

This article introduces a novel Web architecture that supports session migration in multi-device Web applications, particularly the case when a user starts a Web session on a computer and wishes to continue on a mobile phone. The proposed solution for transferring the needed session identifiers...... across devices is to dynamically generate pictures of 2D-barcodes containing a Web address and a session ID in an encoded form. 2D-barcodes are a cheap, fast and robust approach to the problem. They are widely known and used in Japan, and are spreading in other countries. Variations on the topic...

Stability and Performance of CsPbI2Br Thin Films and Solar Cell Devices.

Science.gov (United States)

Mariotti, Silvia; Hutter, Oliver S; Phillips, Laurie J; Yates, Peter J; Kundu, Biswajit; Durose, Ken

2018-01-31

In this manuscript, the inorganic perovskite CsPbI 2 Br is investigated as a photovoltaic material that offers higher stability than the organic-inorganic hybrid perovskite materials. It is demonstrated that CsPbI 2 Br does not irreversibly degrade to its component salts as in the case of methylammonium lead iodide but instead is induced (by water vapor) to transform from its metastable brown cubic (1.92 eV band gap) phase to a yellow phase having a higher band gap (2.85 eV). This is easily reversed by heating to 350 °C in a dry environment. Similarly, exposure of unencapsulated photovoltaic devices to water vapor causes current (J SC ) loss as the absorber transforms to its more transparent (yellow) form, but this is also reversible by moderate heating, with over 100% recovery of the original device performance. NMR and thermal analysis show that the high band gap yellow phase does not contain detectable levels of water, implying that water induces the transformation but is not incorporated as a major component. Performances of devices with best efficiencies of 9.08% (V OC = 1.05 V, J SC = 12.7 mA cm -2 and FF = 68.4%) using a device structure comprising glass/ITO/c-TiO 2 /CsPbI 2 Br/Spiro-OMeTAD/Au are presented, and further results demonstrating the dependence of the performance on the preparation temperature of the solution processed CsPbI 2 Br films are shown. We conclude that encapsulation of CsPbI 2 Br to exclude water vapor should be sufficient to stabilize the cubic brown phase, making the material of interest for use in practical PV devices.

An accelerometry-based comparison of 2 robotic assistive devices for treadmill training of gait.

Science.gov (United States)

Regnaux, Jean-Philippe; Saremi, Kaveh; Marehbian, Jon; Bussel, Bernard; Dobkin, Bruce H

2008-01-01

Two commercial robotic devices, the Gait Trainer (GT) and the Lokomat (LOKO), assist task-oriented practice of walking. The gait patterns induced by these motor-driven devices have not been characterized and compared. A healthy participant chose the most comfortable gait pattern on each device and for treadmill (TM) walking at 1, 2 (maximum for the GT), and 3 km/h and over ground at similar speeds. A system of accelerometers on the thighs and feet allowed the calculation of spatiotemporal features and accelerations during the gait cycle. At the 1 and 2 km/h speed settings, single-limb stance times were prolonged on the devices compared with overground walking. Differences on the LOKO were decreased by adjusting the hip and knee angles and step length. At the 3 km/h setting, the LOKO approximated the participant's overground parameters. Irregular accelerations and decelerations from toe-off to heel contact were induced by the devices, especially at slower speeds. The LOKO and GT impose mechanical constraints that may alter leg accelerations-decelerations during stance and swing phases, as well as stance duration, especially at their slower speed settings, that are not found during TM and overground walking. The potential impact of these perturbations on training to improve gait needs further study.

Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

Science.gov (United States)

Cui, Xu

MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device

International Nuclear Information System (INIS)

Liu Zi-Yu; Zhang Pei-Jian; Meng Yang; Li Dong; Meng Qing-Yu; Li Jian-Qi; Zhao Hong-Wu

2012-01-01

The I—V characteristics of In 2 O 3 :SnO 2 /TiO 2 /In 2 O 3 :SnO 2 junctions with different interfacial barriers are investigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

Science.gov (United States)

Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

2018-05-01

A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

Delay reduction in multi-hop device-to-device communication using network coding

KAUST Repository

Douik, Ahmed S.

2015-08-12

This paper considers the problem of reducing the broadcast delay of wireless networks using instantly decodable network coding (IDNC) based device-to-device (D2D) communications. In D2D-enabled networks, devices help hasten the recovery of the lost packets of devices in their transmission range by sending network coded packets. To solve the problem, the different events occurring at each device are identified so as to derive an expression for the probability distribution of the decoding delay. The joint optimization problem over the set of transmitting devices and the packet combinations of each is formulated. Due to the high complexity of finding the optimal solution, this paper focuses on cooperation without interference between the transmitting users. The optimal solution, in such interference-less scenario, is expressed using a graph theory approach by introducing the cooperation graph. Extensive simulations compare the decoding delay experienced in the Point to Multi-Point (PMP), the fully connected D2D (FC-D2D) and the more practical partially connected D2D (PC-D2D) configurations and suggest that the PC-D2D outperforms the FC-D2D in all situations and provides an enormous gain for poorly connected networks.

Transport properties and device-design of Z-shaped MoS2 nanoribbon planar junctions

Science.gov (United States)

Zhang, Hua; Zhou, Wenzhe; Liu, Qi; Yang, Zhixiong; Pan, Jiangling; Ouyang, Fangping; Xu, Hui

2017-09-01

Based on MoS2 nanoribbons, metal-semiconductor-metal planar junction devices were constructed. The electronic and transport properties of the devices were studied by using density function theory (DFT) and nonequilibrium Green's functions (NEGF). It is found that a band gap about 0.4 eV occurs in the planar junction. The electron and hole transmissions of the devices are mainly contributed by the Mo atomic orbitals. The electron transport channel is located at the edge of armchair MoS2 nanoribbon, while the hole transport channel is delocalized in the channel region. The I-V curve of the two-probe device shows typical transport behavior of Schottky barrier, and the threshold voltage is of about 0.2 V. The field effect transistors (FET) based on the planar junction turn out to be good bipolar transistors, the maximum current on/off ratio can reach up to 1 × 104, and the subthreshold swing is 243 mV/dec. It is found that the off-state current is dependent on the length and width of the channel, while the on-state current is almost unaffected. The switching performance of the FET is improved with increasing the length of the channel, and shows oscillation behavior with the change of the channel width.

Conductance switching in Ag{sub 2}S devices fabricated by in situ sulfurization

Energy Technology Data Exchange (ETDEWEB)

Morales-Masis, M; Molen, S J van der; Hesselberth, M B; Ruitenbeek, J M van [Kamerlingh Onnes Laboratorium, Universiteit Leiden, PO Box 9504, 2300 RA Leiden (Netherlands); Fu, W T [Leiden Institute of Chemistry, Gorlaeus Laboratorium, Universiteit Leiden, PO Box 9502, 2300 RA Leiden (Netherlands)], E-mail: ruitenbeek@physics.leidenuniv.nl

2009-03-04

We report a simple and reproducible method to fabricate switchable Ag{sub 2}S devices. The {alpha}-Ag{sub 2}S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag{sub 2}S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag{sub 2}S, increasing the Ag{sup +} ion mobility. The as-fabricated Ag{sub 2}S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

Energy monitoring device for 1.5-2.4 MeV electron beams

Energy Technology Data Exchange (ETDEWEB)

Fuochi, P.G., E-mail: fuochi@isof.cnr.i [CNR-ISOF, Via P. Gobetti 101, I-40129 Bologna (Italy); Lavalle, M.; Martelli, A. [CNR-ISOF, Via P. Gobetti 101, I-40129 Bologna (Italy); Kovacs, A. [Institute of Isotopes, HAS, P.O.Box 77, H-1525 Budapest (Hungary); Mehta, K. [Arbeiterstrandbad Strasse 72, Vienna, A-1210 (Austria); Kuntz, F.; Plumeri, S. [Aerial, Parc d' Innovation Rue Laurent Fries F-67400 Illkirch (France)

2010-03-11

An easy-to-use and robust energy monitoring device has been developed for reliable detection of day-to-day small variations in the electron beam energy, a critical parameter for quality control and quality assurance in industrial radiation processing. It has potential for using on-line, thus providing real-time information. Its working principle is based on the measurement of currents, or charges, collected by two aluminium absorbers of specific thicknesses (dependent on the beam energy), insulated from each other and positioned within a faraday cup-style aluminium cage connected to the ground. The device has been extensively tested in the energy range of 4-12 MeV under standard laboratory conditions at Institute of Isotopes and CNR-ISOF using different types of electron accelerators; namely, a TESLA LPR-4 LINAC (3-6 MeV) and a L-band Vickers LINAC (7-12 MeV), respectively. This device has been also tested in high power electron beam radiation processing facilities, one equipped with a 7-MeV LUE-8 linear accelerator used for crosslinking of cables and medical device sterilization, and the other equipped with a 10 MeV Rhodotron TT100 recirculating accelerator used for in-house sterilization of medical devices. In the present work, we have extended the application of this method to still lower energy region, i.e. from 1.5 to 2.4 MeV. Also, we show that such a device is capable of detecting deviation in the beam energy as small as 40 keV.

Energy monitoring device for 1.5-2.4 MeV electron beams

Science.gov (United States)

Fuochi, P. G.; Lavalle, M.; Martelli, A.; Kovács, A.; Mehta, K.; Kuntz, F.; Plumeri, S.

2010-03-01

An easy-to-use and robust energy monitoring device has been developed for reliable detection of day-to-day small variations in the electron beam energy, a critical parameter for quality control and quality assurance in industrial radiation processing. It has potential for using on-line, thus providing real-time information. Its working principle is based on the measurement of currents, or charges, collected by two aluminium absorbers of specific thicknesses (dependent on the beam energy), insulated from each other and positioned within a faraday cup-style aluminium cage connected to the ground. The device has been extensively tested in the energy range of 4-12 MeV under standard laboratory conditions at Institute of Isotopes and CNR-ISOF using different types of electron accelerators; namely, a TESLA LPR-4 LINAC (3-6 MeV) and a L-band Vickers LINAC (7-12 MeV), respectively. This device has been also tested in high power electron beam radiation processing facilities, one equipped with a 7-MeV LUE-8 linear accelerator used for crosslinking of cables and medical device sterilization, and the other equipped with a 10 MeV Rhodotron TT100 recirculating accelerator used for in-house sterilization of medical devices. In the present work, we have extended the application of this method to still lower energy region, i.e. from 1.5 to 2.4 MeV. Also, we show that such a device is capable of detecting deviation in the beam energy as small as 40 keV.

Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

Energy Technology Data Exchange (ETDEWEB)

Lijuan Zou

2003-08-05

Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

International Nuclear Information System (INIS)

Lijuan Zou

2003-01-01

Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm 2 , the optimal radiance R could reach 0.38 mW/cm 2 , and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be ∼ 10 -5 cm 2 /Vs and ∼ 10 -4 cm 2 /Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces

Substrate type < 111 >-Cu{sub 2}O/<0001 >-ZnO photovoltaic device prepared by photo-assisted electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Zamzuri, Mohd, E-mail: zamzuri@tf.me.tut.ac.jp [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); School of Manufacturing Eng., Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600 Arau, Perlis (Malaysia); Sasano, Junji [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Mohamad, Fariza Binti [Faculty of Electrical & Electronic Eng., University Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor (Malaysia); Izaki, Masanobu [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

2015-11-30

The substrate-type < 0001 > ZnO/<111 > Cu{sub 2}O photovoltaic (PV) device has been constructed by electrodeposition of a < 111 >-p-Cu{sub 2}O layer on an Au(111)/Si wafer substrate followed by stacking the n-ZnO layer by electrodeposition during light irradiation in aqueous solutions. The PV device was fabricated by stacking the Al:ZnO-window by sputtering and the top Al electrode by vacuum evaporation. The < 0001 >-ZnO layer was composed of aggregates of hexagonal columnar grains grown in the direction normal to the surface, and pores could be observed between the ZnO grains at the deposition time last 1800 s. The < 0001 >-ZnO/<111 >-Cu{sub 2}O PV device showed a photovoltaic performance under AM1.5 illumination, and showed the improved short-circuit current density of 5.87 mA cm{sup −2} by stacking the AZO-TCO due to the increase in the diffusion length of the carrier. - Highlights: • Substrate type ZnO/Cu{sub 2}O photovoltaic devices only by electrodeposition • ZnO layer was stacked on the Cu{sub 2}O layer by photo-assisted electrodeposition. • AZO/ZnO/Cu{sub 2}O photovoltaic devices with a short-circuit current density of 5.87 mA cm{sup −2}.

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

Science.gov (United States)

Kaneko, Kentaro; Fujita, Shizuo; Hitora, Toshimi

2018-02-01

Corundum-structured oxides have been attracting much attention as next-generation power device materials. A corundum-structured α-Ga2O3 successfully demonstrated power device operations of Schottky barrier diodes (SBDs) with the lowest on-resistance of 0.1 mΩ cm2. The SBDs as a mounting device of TO220 also showed low switching-loss properties with a capacitance of 130 pF. Moreover, the thermal resistance was 13.9 °C/W, which is comparable to that of the SiC TO220 device (12.5 °C/W). On the other hand, corundum-structured α-(Rh,Ga)2O3 showed p-type conductivity, which was confirmed by Hall effect measurements. The Hall coefficient, carrier density, and mobility were 8.22 cm3/C, 7.6 × 1017/cm3, and 1.0 cm2 V-1 s-1, respectively. These values were acceptable for the p-type layer of pn diodes based on α-Ga2O3.

Ultra-Compact 100 × 100 μm2 Footprint Hybrid Device with Spin-Valve Nanosensors

Directory of Open Access Journals (Sweden)

Diana C. Leitao

2015-12-01

Full Text Available Magnetic field mapping with micrometric spatial resolution and high sensitivity is a challenging application, and the technological solutions are usually based on large area devices integrating discrete magnetic flux guide elements. In this work we demonstrate a high performance hybrid device with improved field sensitivity levels and small footprint, consisting of a ultra-compact 2D design where nanometric spin valve sensors are inserted within the gap of thin-film magnetic flux concentrators. Pole-sensor distances down to 400 nm are demonstrated using nanofabrication techniques combined with an optimized liftoff process. These 100 × 100 μm 2 pixel sensors can be integrated in modular devices for surface mapping without moving parts.

Novel electrochromic devices based on composite films of poly(2,5-dimethoxyaniline)-waterborne polyurethane

International Nuclear Information System (INIS)

Yang, C.-H.; Chong, L.-W.; Huang, L.-M.; Lee, Y.-L.; Wen, T.-C.

2005-01-01

Waterborne polyurethane (WPU) was spin-coated on indium tin oxide (ITO) coated glass. Poly(2,5-dimethoxyaniline) (PDMA) was deposited using electrochemical polymerization as conducting composite film on the above WPU/ITO electrode and used as an electrode in an electrochromic device assembly. Tungsten oxide (WO 3 ) coated ITO glass was used as the other electrode with LiClO 4 doped gelled polyethylene oxide (PEO) as polymer electrolyte. The configuration of an electrochromic device was assembled: ITO/WPU-PDMA II LiClO 4 -PC-PEO (400,000) II WO 3 /ITO, where PC represents propylene carbonate. The characterization of the single electrodes, ITO/WPU-PDMA composite, ITO/WO 3 , and the device was performed by using cyclic voltammetry. The columbic efficiency (CE) of the ITO/WPU-PDMA composite and ITO/WO 3 electrodes were close to 100%. The optical contrast of the single electrodes and the device were determined by UV-vis spectroelectrochemical studies. A visible contrast in color upon switching the potential from -1.50 to +1.50 V was noticed for the device. The device was pale yellow at -1.5 V and dark green at +1.5 V. The CE of the device was 91%. Double potential chronamperomtry was used to determine the response time of coloring and bleaching processes. The bleaching process was found to be faster than coloring. The stability of the device was established by polarizing the device and recording the UV-vis spectrum in open circuit conditions. Bleaching state is more stable than coloring state

Hot gas handling device and motorized vehicle comprising the device

NARCIS (Netherlands)

Klein Geltink, J.; Beukers, A.; Van Tooren, M.J.L.; Koussios, S.

2012-01-01

The invention relates to a device for handling hot exhaust gasses discharged from an internal combustion engine. The device comprises a housing (2), enclosing a space (3) for transporting the exhaust gasses. The housing (2) is provided with an entrance - opening (4) for the exhaust gasses discharged

A new DRAM-type memory devices based on polymethacrylate containing pendant 2-methylbenzothiazole

International Nuclear Information System (INIS)

Wang Dong; Li Hua; Li Najun; Zhao Ying; Zhou Qianhao; Xu Qingfeng; Lu Jianmei; Wang Lihua

2012-01-01

Graphical abstract: The devices fabricated with 75 nm and 45 nm thick pBVMA films were both found to exhibit DRAM type memory behaviors, which may indicate that the Al nanoparticles had no penetration into the thin film during the vacuum-deposition process. Highlights: ► The side-functional moieties of pBVMA regularly arranged in film state. ► The device exhibits volatile memory behavior with an ON/OFF current ratio up to 10 5 . ► The film thickness has nothing to do with the device's memory behavior. ► Physical theoretical models and molecular simulation supported the memory mechanism. - Abstract: A polymethacrylate containing pendant 2-methylbenzothiazole (pBVMA) with good thermal stability was synthesized by free radical polymerization. The devices based on pBVMA possess a sandwich structure comprising bottom indium-tin oxide (ITO) electrode and top Al electrode. The as-fabricated device exhibits the dynamic random access memory (DRAM) behavior with an ON/OFF current ratio up to 10 5 and can endure 10 8 read cycles under −1 V pulse voltage. The effect of the film thickness on the device performance was investigated and the devices fabricated with 75 nm and 45 nm thick pBVMA films were both found to exhibit DRAM type memory behaviors, which may indicate that the Al nanoparticles had no penetration into the thin film during the vacuum-deposition process. The molecular simulation and physical theoretical models were analyzed and the mechanism of the DRAM performance may be attributed to the weak electron withdrawing ability of the molecule.

Novel Concepts for Device to Device Communication using Network Coding

DEFF Research Database (Denmark)

Pahlevani, Peyman; Hundebøll, Martin; Pedersen, Morten Videbæk

2014-01-01

Device-to-device communication is currently a hot research topic within 3GPP. Even though D2D communication has been part of previous ad hoc, meshed and sensor networks proposals, the main contribution by 3GPP is that the direct communication among two devices is carried out over a dynamically as...

Device-independent randomness amplification with a single device

International Nuclear Information System (INIS)

Plesch, Martin; Pivoluska, Matej

2014-01-01

Expansion and amplification of weak randomness with untrusted quantum devices has recently become a very fruitful topic of research. Here we contribute with a procedure for amplifying a single weak random source using tri-partite GHZ-type entangled states. If the quality of the source reaches a fixed threshold R=log 2 ⁡(10), perfect random bits can be produced. This technique can be used to extract randomness from sources that can't be extracted neither classically, nor by existing procedures developed for Santha–Vazirani sources. Our protocol works with a single fault-free device decomposable into three non-communicating parts, that is repeatedly reused throughout the amplification process. - Highlights: • We propose a protocol for device independent randomness amplification. • Our protocol repeatedly re-uses a single device decomposable into three parts. • Weak random sources with min-entropy rate greater than 1/4 log 2 ⁡(10) can be amplified. • Security against all-quantum adversaries is achieved

Transmission electron microscopy assessment of conductive-filament formation in Ni-HfO2-Si resistive-switching operational devices

Science.gov (United States)

Martín, Gemma; González, Mireia B.; Campabadal, Francesca; Peiró, Francesca; Cornet, Albert; Estradé, Sònia

2018-01-01

Resistive random-access memory (ReRAM) devices are currently the object of extensive research to replace flash non-volatile memory. However, elucidation of the conductive-filament formation mechanisms in ReRAM devices at nanoscale is mandatory. In this study, the different states created under real operation conditions of HfO2-based ReRAM devices are characterized through transmission electron microscopy and electron energy-loss spectroscopy. The physical mechanism behind the conductive-filament formation in Ni/HfO2/Si ReRAM devices based on the diffusion of Ni from the electrode to the Si substrate and of Si from the substrate to the electrode through the HfO2 layer is demonstrated.

Josephson effect in Al/Bi{sub 2}Se{sub 3}/Al coplanar hybrid devices

Energy Technology Data Exchange (ETDEWEB)

Galletti, L., E-mail: luca.galletti@unina.it [Dipartimento di Scienze Fisiche, Università degli Studi di Napoli Federico II, I-80126 Napoli (Italy); CNR-SPIN Napoli, Complesso Universitario di Monte Sant’Angelo, 80126 Napoli (Italy); Charpentier, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden); Lucignano, P.; Massarotti, D. [Dipartimento di Scienze Fisiche, Università degli Studi di Napoli Federico II, I-80126 Napoli (Italy); CNR-SPIN Napoli, Complesso Universitario di Monte Sant’Angelo, 80126 Napoli (Italy); Arpaia, R. [Dipartimento di Scienze Fisiche, Università degli Studi di Napoli Federico II, I-80126 Napoli (Italy); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden); Tafuri, F. [CNR-SPIN Napoli, Complesso Universitario di Monte Sant’Angelo, 80126 Napoli (Italy); Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, I-81031 Aversa (CE) (Italy); Bauch, T. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden); Suzuki, Y. [University of Tsukuba, Institute of Materials Science, Tsukuba 305, Ibaraki (Japan); Tagliacozzo, A. [Dipartimento di Scienze Fisiche, Università degli Studi di Napoli Federico II, I-80126 Napoli (Italy); Kadowaki, K. [University of Tsukuba, Institute of Materials Science, Tsukuba 305, Ibaraki (Japan); Lombardi, F. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)

2014-08-15

Highlights: • Superconducting proximity effect induced in Al/Bi{sub 2}Se{sub 3}/Al coplanar hybrid devices. • Comparative study of Al/Bi{sub 2}Se{sub 3} interfaces with various buffer layers. • Towards a Josephson super-current through the edge states of topological insulators. - Abstract: The edge states of Topological Insulators (TI) are protected against backscattering, thanks to the topological properties arising from their band structure. Coupling a TI to a superconductor (S) can induce unconventional effects, including the creation of Majorana bound states (MBS). The fabrication of coplanar hybrid devices is a fundamental step to pave the way to the understanding of proximity effects in topologically non-trivial systems, and to a large variety of experiments aimed at the possible detection of MBS. We discuss the feasibility and some relevant properties of Al–Bi{sub 2}Se{sub 3}–Al coplanar proximity devices. Special attention is devoted to the design of the junction, aimed at enhancing the coupling between the electrodes and the TI.

Resource management for device-to-device underlay communication

CERN Document Server

Song, Lingyang; Xu, Chen

2013-01-01

Device-to-Device (D2D) communication will become a key feature supported by next generation cellular networks, a topic of enormous importance to modern communication. Currently, D2D serves as an underlay to the cellular network as a means to increase spectral efficiency. Although D2D communication brings large benefits in terms of system capacity, it also causes interference as well as increased computation complexity to cellular networks as a result of spectrum sharing. Thus, efficient resource management must be performed to guarantee a target performance level of cellular communication.This

Comparison of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure

International Nuclear Information System (INIS)

Nelson, A.J.; Gabor, A.M.; Contreras, M.A.; Tuttle, J.R.; Noufi, R.; Sobol, P.E.; Asoka-Kumar, P.; Lynn, K.G.

1995-01-01

X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS) have been used to characterize the surface versus bulk composition, electronic, and physical structure of polycrystalline Cu(In,Ga)Se 2 thin-film interfaces. Angle-resolved high-resolution photoemission measurements on the valence-band electronic structure and Cu 2p, In 3d, Ga 2p, and Se 3d core lines were used to evaluate the surface and near surface chemistry of CuInSe 2 and Cu(In,Ga)Se 2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Results of these measurements are related to device efficiencies to show the effects of compositional variations and defect concentrations in the near surface region on device performance. copyright 1995 American Institute of Physics

Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

Science.gov (United States)

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-01

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

Synthesis and Characterization of Highly Sensitive Hydrogen (H2 Sensing Device Based on Ag Doped SnO2 Nanospheres

Directory of Open Access Journals (Sweden)

Zhaorui Lu

2018-03-01

Full Text Available In this paper, pure and Ag-doped SnO2 nanospheres were synthesized by hydrothermal method and characterized via X-ray powder diffraction (XRD, field emission scanning electron microscopy (FESEM, energy dispersive spectroscopy (EDS, and X-ray photoelectron spectra (XPS, respectively. The gas sensing performance of the pure, 1 at.%, 3 at.%, and 5 at.% Ag-doped SnO2 sensing devices toward hydrogen (H2 were systematically evaluated. The results indicated that compared with pure SnO2 nanospheres, Ag-doped SnO2 nanospheres could not only decrease the optimum working temperature but also significantly improve H2 sensing such as higher gas response and faster response-recovery. Among all the samples, the 3 at.% Ag-doped SnO2 showed the highest response 39 to 100 μL/L H2 at 300 °C. Moreover, its gas sensing mechanism was discussed, and the results will provide reference and theoretical guidance for the development of high-performance SnO2-based H2 sensing devices.

Strategy2D: Turn-based Strategy Video Game Engine for Mobile Devices

OpenAIRE

Calvo Villazón, Javier

2014-01-01

Multi-platform video game engine for the development of turn-based strategy games for mobile devices. Developed in C++ within the Cocos2d-x framework, It provides a scalable and configurable tool for the creation of this type of games.

Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

Science.gov (United States)

Song, Yipu; Schmitt, Andrew L; Jin, Song

2008-08-01

Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

ALD-Developed Plasmonic Two-Dimensional Au-WO3-TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices.

Science.gov (United States)

Karbalaei Akbari, Mohammad; Hai, Zhenyin; Wei, Zihan; Detavernier, Christophe; Solano, Eduardo; Verpoort, Francis; Zhuiykov, Serge

2018-03-28

Electrically responsive plasmonic devices, which benefit from the privilege of surface plasmon excited hot carries, have supported fascinating applications in the visible-light-assisted technologies. The properties of plasmonic devices can be tuned by controlling charge transfer. It can be attained by intentional architecturing of the metal-semiconductor (MS) interfaces. In this study, the wafer-scaled fabrication of two-dimensional (2D) TiO 2 semiconductors on the granular Au metal substrate is achieved using the atomic layer deposition (ALD) technique. The ALD-developed 2D MS heterojunctions exhibited substantial enhancement of the photoresponsivity and demonstrated the improvement of response time for 2D Au-TiO 2 -based plasmonic devices under visible light illumination. To circumvent the undesired dark current in the plasmonic devices, a 2D WO 3 nanofilm (∼0.7 nm) was employed as the intermediate layer on the MS interface to develop the metal-insulator-semiconductor (MIS) 2D heterostructure. As a result, 13.4% improvement of the external quantum efficiency was obtained for fabricated 2D Au-WO 3 -TiO 2 heterojunctions. The impedancometry measurements confirmed the modulation of charge transfer at the 2D MS interface using MIS architectonics. Broadband photoresponsivity from the UV to the visible light region was observed for Au-TiO 2 and Au-WO 3 -TiO 2 heterostructures, whereas near-infrared responsivity was not observed. Consequently, considering the versatile nature of the ALD technique, this approach can facilitate the architecturing and design of novel 2D MS and MIS heterojunctions for efficient plasmonic devices.

Personal Flotation Devices Research. Volume 2. Research Report.

Science.gov (United States)

1978-01-01

approval if it was not designed to the Type I, I , I , or IV criteria. This approach allows high life-saving effectiveness devices to enter the market if...Type X devices enjoy a market reception on the order of the reception given to Type III (the costs for Type Xs and Type Ills would be similar), an...addition to attempts to document the rate of wear of PFDs , previous researc h has measured various design features of PFDs and boater ’s attitudes . The

Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

KAUST Repository

Chand, Umesh

2017-08-05

We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

Fabrication and Characterization of Bi2Te3-Based Chip-Scale Thermoelectric Energy Harvesting Devices

Science.gov (United States)

Cornett, Jane; Chen, Baoxing; Haidar, Samer; Berney, Helen; McGuinness, Pat; Lane, Bill; Gao, Yuan; He, Yifan; Sun, Nian; Dunham, Marc; Asheghi, Mehdi; Goodson, Ken; Yuan, Yi; Najafi, Khalil

2017-05-01

Thermoelectric energy harvesters convert otherwise wasted heat into electrical energy. As a result, they have the potential to play a critical role in the autonomous wireless sensor network signal chain. In this paper, we present work carried out on the development of Bi2Te3-based thermoelectric chip-scale energy harvesting devices. Process flow, device demonstration and characterization are highlighted.

The influence of Ti doping and annealing on Ce{sub 2}Ti{sub 2}O{sub 7} flash memory devices

Energy Technology Data Exchange (ETDEWEB)

Kao, Chyuan Haur [Department of Electronic Engineering, Chang Gung University, No. 259, Wenhua 1st Rd., Guishan Dist., Taoyuan City 33302, Taiwan, ROC (China); Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, College of Medicine, Taoyuan, Taiwan, ROC (China); Department of Electronic Engineering, Ming Chi University of Technology, Taiwan, ROC (China); Chen, Su Zhien [Department of Electronic Engineering, Chang Gung University, No. 259, Wenhua 1st Rd., Guishan Dist., Taoyuan City 33302, Taiwan, ROC (China); Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, College of Medicine, Taoyuan, Taiwan, ROC (China); Luo, Yang; Chiu, Wang Ting; Chiu, Shih Wei; Chen, I Chien [Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Rd., Puli, Nantou Country 54561, Taiwan, ROC (China); Lin, Chan-Yu [Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, College of Medicine, Taoyuan, Taiwan, ROC (China); Chen, Hsiang, E-mail: hchen@ncnu.edu.tw [Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Rd., Puli, Nantou Country 54561, Taiwan, ROC (China)

2017-02-28

Highlights: • Ce{sub 2}Ti{sub 2}O{sub 7} flash memories have been fabricated. • Material quality can be improved by annealing. • The memory performance can be enhanced by Ti doping. • Ti doping and annealing can reinforce crystallization. - Abstract: In this research, a CeO{sub 2} film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce{sub 2}Ti{sub 2}O{sub 7} trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce{sub 2}Ti{sub 2}O{sub 7}-based memory device is promising for future industrial flash memory applications.

77 FR 58576 - Certain Wireless Communication Devices, Portable Music and Data Processing Devices, Computers...

Science.gov (United States)

2012-09-21

... Devices, Portable Music and Data Processing Devices, Computers, and Components Thereof; Institution of... communication devices, portable music and data processing devices, computers, and components thereof by reason... alleges that an industry in the United States exists as required by subsection (a)(2) of section 337. The...

Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

Energy Technology Data Exchange (ETDEWEB)

Liu, P., E-mail: liup0013@ntu.edu.sg; Chen, T. P., E-mail: echentp@ntu.edu.sg; Li, X. D.; Wong, J. I. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Liu, Z. [School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Liu, Y. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Leong, K. C. [GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)

2014-01-20

A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼10{sup 9} Ω for a device with the radius of 50 μm) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is ∼10{sup 3} Ω for the radius of 50 μm) by applying a voltage pulse (e.g., 10 V/1 μs). The WORM device has good data-retention and reading-endurance capabilities.

Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

Science.gov (United States)

Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

2008-08-01

High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO2 thin film (~(1.6-3.1) × 10-3λ) is required to achieve temperature-stable SAW devices based on diamond.

Firewood preparation devices in 1994

International Nuclear Information System (INIS)

Mutikainen, A.

1994-01-01

A review of the market situation regarding firewood preparation devices is presented. The information was collected from the answers to a mail questionnaire. The review is assumed to include all the leading manufacturers and importers. Firewood production devices were available from 26 manufacturers. The range of models amounted to over 70. These may be divided into three categories: 1. cutting devices: the most common solution being a cross-cutting circular saw. There were only a few of these on sale as it is quite easy to include a splitting device on the same frame. 2. Splitting devices: e.g. screw splitter and hydraulically powered splitter. About 20 models are available on the markets. Cross cutting and splitting devices: these are the most popular devices. A cross-cutting circular saw with screw or hydraulic splitter is the most common type. There are about 50 models available on the markets. Cross-cutting and splitting devices are often equipped with conveyor for transferring the split wood e.g. into a trailer. Chopping devices are delivered as tractor powered devices, as electric motor powered devices or as combustion engine powered devices. Some of them are equipped with a time saving feeding device enabling the next stem to be lifted into position while the previous one is being chopped. The Finnish Work Efficiency Institute's studies show that when cross-cutting and splitting of stems into pieces of 35-50 cm in length, productivity for one operator varies in between 0.8 - 3.2 m 3 /h, depending on the device and work method used. (6 refs., 1 fig., 2 tabs.)

Are Portable Stereophotogrammetric Devices Reliable in Facial Imaging? A Validation Study of VECTRA H1 Device.

Science.gov (United States)

Gibelli, Daniele; Pucciarelli, Valentina; Cappella, Annalisa; Dolci, Claudia; Sforza, Chiarella

2018-01-31

Modern 3-dimensional (3D) image acquisition systems represent a crucial technologic development in facial anatomy because of their accuracy and precision. The recently introduced portable devices can improve facial databases by increasing the number of applications. In the present study, the VECTRA H1 portable stereophotogrammetric device was validated to verify its applicability to 3D facial analysis. Fifty volunteers underwent 4 facial scans using portable VECTRA H1 and static VECTRA M3 devices (2 for each instrument). Repeatability of linear, angular, surface area, and volume measurements was verified within the device and between devices using the Bland-Altman test and the calculation of absolute and relative technical errors of measurement (TEM and rTEM, respectively). In addition, the 2 scans obtained by the same device and the 2 scans obtained by different devices were registered and superimposed to calculate the root mean square (RMS; point-to-point) distance between the 2 surfaces. Most linear, angular, and surface area measurements had high repeatability in M3 versus M3, H1 versus H1, and M3 versus H1 comparisons (range, 82.2 to 98.7%; TEM range, 0.3 to 2.0 mm, 0.4° to 1.8°; rTEM range, 0.2 to 3.1%). In contrast, volumes and RMS distances showed evident differences in M3 versus M3 and H1 versus H1 comparisons and reached the maximum when scans from the 2 different devices were compared. The portable VECTRA H1 device proved reliable for assessing linear measurements, angles, and surface areas; conversely, the influence of involuntary facial movements on volumes and RMS distances was more important compared with the static device. Copyright © 2018 American Association of Oral and Maxillofacial Surgeons. Published by Elsevier Inc. All rights reserved.

Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer

International Nuclear Information System (INIS)

Dewan, Namrata; Tomar, Monika; Gupta, Vinay; Sreenivas, K.

2005-01-01

Amorphous TeO 2 thin film, sputtered in the O 2 +Ar(25%+75%) gas environment using a metallic tellurium target, has been identified as an attractive negative temperature coefficient of delay (TCD) material that can yield a temperature stable device when combined with a surface acoustic wave (SAW) device based on positive TCD material such as LiNbO 3 . The influence of amorphous TeO 2 over-layer on the SAW propagation characteristics (velocity and temperature coefficient of delay) of the SAW filters (36 and 70 MHz) based on 128 deg. rotated Y-cut X-propagating lithium niobate (128 deg. Y-X LiNbO 3 ) single crystal has been studied. It is found that 0.042 λ thick TeO 2 over-layer on a prefabricated SAW device operating at 36 MHz centre frequency, reduces the TCD of the device from 76 ppm deg. C -1 to almost zero (∼1.4 ppm deg. C -1 ) without deteriorating its efficiency and could be considered as a suitable alternative for temperature stable devices in comparison to conventional SiO 2 over-layer

A biomechanical evaluation of all-inside 2-stitch meniscal repair devices with matched inside-out suture repair.

Science.gov (United States)

Ramappa, Arun J; Chen, Alvin; Hertz, Benjamin; Wexler, Michael; Grimaldi Bournissaint, Leandro; DeAngelis, Joseph P; Nazarian, Ara

2014-01-01

Many all-inside suture-based devices are currently available, including the Meniscal Cinch, FasT-Fix, Ultra FasT-Fix, RapidLoc, MaxFire, and CrossFix System. These different devices have been compared in various configurations, but to our knowledge, the Sequent meniscal repair device, which applies running sutures, has not been compared with the Ultra FasT-Fix, nor has it been compared with its suture, No. 0 Hi-Fi, using an inside-out repair technique. To assess the quality of the meniscal repair, all new devices should be compared with the gold standard: the inside-out repair. To that end, this study aims to compare the biomechanical characteristics of running sutures delivered by the Sequent meniscal repair device with 2 vertical mattress sutures applied using the Ultra FasT-Fix device and with 2 vertical mattress sutures using an inside-out repair technique with No. 0 Hi-Fi suture. Controlled laboratory study. Paired (medial and lateral), fresh-frozen porcine menisci were randomly assigned to 1 of 3 groups: Sequent (n = 17), Ultra FasT-Fix (n = 19), and No. 0 Hi-Fi inside-out repair (n = 20). Bucket-handle tears were created in all menisci and were subjected to repair according to their grouping. Once repaired, the specimens were subjected to cyclic loading (100, 300, and 500 cycles), followed by loading to failure. The Sequent and Ultra FasT-Fix device repairs and the suture repair exhibited low initial displacements. The Sequent meniscal repair device demonstrated the lowest displacement in response to cyclic loading. No. 0 Hi-Fi suture yielded the highest load to failure. With the development of the next generation of all-inside meniscal repair devices, surgeons may use these findings to select the method best suited for their patients. The Sequent meniscal repair device displays the least amount of displacement during cyclic loading but has a similar failure load to other devices.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

Science.gov (United States)

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-01

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

Observation of red electroluminescence from an Eu2O3/ p +-Si device and improved performance by introducing a Tb2O3 layer

International Nuclear Information System (INIS)

Yin, Xue; Wang, Shenwei; Mu, Guangyao; Wan, Guangmiao; Huang, Miaoling; Yi, Lixin

2017-01-01

We report red electroluminescence (EL) from an Eu 2 O 3 / p + -Si device with Eu 2 O 3 film annealed in oxygen ambient at 700 °C. The red EL is ascribed to the characteristic emissions of Eu 3+ ions in Eu 2 O 3 film and the luminescence mechanism is discussed in detail. In order to optimize the device performance, Eu 2 O 3 /Tb 2 O 3 multiple films were deposited on Si wafer, and the result showed EL intensity of the device was obviously enhanced and the turn-on voltage was reduced to about 10 V. Moreover, intensity ratio I ( 5 D 0 – 7 F 2 )/ I ( 5 D 0 – 7 F 1 ) was also significantly increased with the hypersensitive transition 5 D 0 – 7 F 2 as the most prominent group at about 611 nm. The improved performance was attributed to the added Tb 2 O 3 film that it can be served as the hole-injection layer to afford extra holes injected into the Eu 2 O 3 layer. (paper)

Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

International Nuclear Information System (INIS)

Dewan, Namrata; Sreenivas, K; Gupta, Vinay

2008-01-01

High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO 2 /ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO 2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO 2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO 2 thin film (∼(1.6–3.1) × 10 −3 λ) is required to achieve temperature-stable SAW devices based on diamond

Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices

Science.gov (United States)

Mani, R. G.

2013-01-01

Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a “bell-shape” negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, Rxy, correction. A multi-conduction model, including negative diagonal-conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed “non-ohmic” size-dependent negative GMR. PMID:24067264

TiO2/EVOH based reactive interlayer in Surlyn for organic device encapsulation

International Nuclear Information System (INIS)

Kopanati, Gayathri N; Madras, Giridhar; Ramamurthy, Praveen C

2016-01-01

Barrier materials are important for improving the stability and lifetimes of organic electronic devices. A simple technique for improving the barrier properties of polymer films was considered in this work by using TiO 2 nanoparticles in the interlayer to be incorporated in the polymer film. TiO 2 was synthesized by the solution combustion technique, was further functionalized using stearic acid or octadecylamine to induce hydrophobicity and enhance processing of the composite interlayer. The grafting of these compounds on to TiO 2 was investigated using Fourier transform infrared spectroscopy, Raman spectroscopy, elemental analysis and thermo-gravimetric analysis. The functionalized and neat TiO 2 were blended with poly (vinyl alcohol-ethylene) (EVOH) and were melt compressed between Surlyn films. The resulting nanocomposite films were tested for their transparency and barrier properties using UV–visible spectroscopy and calcium degradation test, respectively. Further, the effectiveness of these barrier films in encapsulating organic devices was determined from accelerated aging tests. Therefore, the synthesized barrier films with neat and functionalized TiO 2 in the interlayers proved to be effective as moisture barrier composite films. (paper)

Dynamic Resource Allocation and Access Class Barring Scheme for Delay-Sensitive Devices in Machine to Machine (M2M) Communications.

Science.gov (United States)

Li, Ning; Cao, Chao; Wang, Cong

2017-06-15

Supporting simultaneous access of machine-type devices is a critical challenge in machine-to-machine (M2M) communications. In this paper, we propose an optimal scheme to dynamically adjust the Access Class Barring (ACB) factor and the number of random access channel (RACH) resources for clustered machine-to-machine (M2M) communications, in which Delay-Sensitive (DS) devices coexist with Delay-Tolerant (DT) ones. In M2M communications, since delay-sensitive devices share random access resources with delay-tolerant devices, reducing the resources consumed by delay-sensitive devices means that there will be more resources available to delay-tolerant ones. Our goal is to optimize the random access scheme, which can not only satisfy the requirements of delay-sensitive devices, but also take the communication quality of delay-tolerant ones into consideration. We discuss this problem from the perspective of delay-sensitive services by adjusting the resource allocation and ACB scheme for these devices dynamically. Simulation results show that our proposed scheme realizes good performance in satisfying the delay-sensitive services as well as increasing the utilization rate of the random access resources allocated to them.

Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

International Nuclear Information System (INIS)

Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

2015-01-01

We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO 2 films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO 2 film is much stronger than that from the counterpart with the 450 °C-annealed CeO 2 film. This is due to that the 550 °C-annealed CeO 2 film contains more Ce 3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f 1 energy band pertaining to Ce 3+ ions leads to the UV-Vis EL

Validity and Reliability of 2 Goniometric Mobile Apps: Device, Application, and Examiner Factors.

Science.gov (United States)

Wellmon, Robert H; Gulick, Dawn T; Paterson, Mark L; Gulick, Colleen N

2016-12-01

Smartphones are being used in a variety of practice settings to measure joint range of motion (ROM). A number of factors can affect the validity of the measurements generated. However, there are no studies examining smartphone-based goniometer applications focusing on measurement variability and error arising from the electromechanical properties of the device being used. To examine the concurrent validity and interrater reliability of 2 goniometric mobile applications (Goniometer Records, Goniometer Pro), an inclinometer, and a universal goniometer (UG). Nonexperimental, descriptive validation study. University laboratory. 3 physical therapists having an average of 25 y of experience. Three standardized angles (acute, right, obtuse) were constructed to replicate the movement of a hinge joint in the human body. Angular changes were measured and compared across 3 raters who used 3 different devices (UG, inclinometer, and 2 goniometric apps installed on 3 different smartphones: Apple iPhone 5, LG Android, and Samsung SIII Android). Intraclass correlation coefficients (ICCs) and Bland-Altman plots were used to examine interrater reliability and concurrent validity. Interrater reliability for each of the smartphone apps, inclinometer and UG were excellent (ICC = .995-1.000). Concurrent validity was also good (ICC = .998-.999). Based on the Bland-Altman plots, the means of the differences between the devices were low (range = -0.4° to 1.2°). This study identifies the error inherent in measurement that is independent of patient factors and due to the smartphone, the installed apps, and examiner skill. Less than 2° of measurement variability was attributable to those factors alone. The data suggest that 3 smartphones with the 2 installed apps are a viable substitute for using a UG or an inclinometer when measuring angular changes that typically occur when examining ROM and demonstrate the capacity of multiple examiners to accurately use smartphone-based goniometers.

Irradiation of UO2+x fuels in the TANOX device

International Nuclear Information System (INIS)

Dehaudt, P.; Caillot, L.; Delette, G.; Eminet, G.; Mocellin, A.

1998-01-01

The TANOX analytical irradiation device is presented and the first results concerning stoichiometric and hyper stoichiometric uranium dioxide fuels with two different grain sizes are given. The TANOX device is designed to obtain rapidly significant burnups in fuels at relatively low temperatures. It is placed at the periphery of the SILOE reactor and translated to adjust the irradiation power. The continuous measure of the centre-line temperature allows to control the experiment and to evaluate the thermal behaviour of the rods. A TANOX fuel rod has a length of 100 mm with 20 fuel pellets in a stainless steel cladding and is inserted in a thick aluminium alloy overcladding which is cooled by the primary water circuit reactor. These conditions of small size pellets and improved thermal exchanges have been designed to dissipate the heat power due to fission densities three to five times higher than in a PWR. The first analytical irradiation was devoted to the study of UO 2.00 , UO 2.01 and UO 2.02 fuels with standard and large grain sizes obtained by annealing. A burnup of about 9000 MWd.t -1 U was reached in these fuels. The thermal analysis shows a degraded conductivity for the UO 2.02 fuel rod due to the hyper stoichiometry. The released fractions of 85 Kr during irradiation are negligible as expected (lower than 0,1%). Some of the pellets were heat treated at 1700 deg. C for 5 hours. The gas release was analysed after 30 minutes and at the end of the treatment. The main results are as follows: the fission gas release (FGR) of the standard UO 2 varies from one sample to another; the FGR of the hyper stoichiometric fuels is of the same order of magnitude than that of the stoichiometric UO 2 fuel of normal grain sizes; the grain size increase has no effect on FGR for UO 2.00 but considerably decreases the FGR for UO 2.01 and UO 2.02 fuels. These heat treated samples are also observed to characterize the inter- and intragranular fission gas bubbles. (author)

16 CFR Figures 1 and 2 to Part 1204 - Suggested Instrumentation for Current Monitoring Device and High Voltage Facility

Science.gov (United States)

2010-01-01

... 16 Commercial Practices 2 2010-01-01 2010-01-01 false Suggested Instrumentation for Current Monitoring Device and High Voltage Facility 1 Figures 1 and 2 to Part 1204 Commercial Practices CONSUMER... Instrumentation for Current Monitoring Device and High Voltage Facility EC03OC91.008 ...

Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites

International Nuclear Information System (INIS)

Zhou, Yang; Yun, Dong Yeol; Kim, Tae Whan; Kim, Sang Wook

2014-01-01

Nonvolatile memory devices based on CuInS 2 (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10 −10 was maintained for 8 × 10 3 cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 10 6 cycles converged to 2.40 × 10 −10 , indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams

A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices

Science.gov (United States)

AlQurashi, Ahmed; Selvakumar, C. R.

2018-06-01

There had been tremendous growth in the field of Integrated circuits (ICs) in the past fifty years. Scaling laws mandated both lateral and vertical dimensions to be reduced and a steady increase in doping densities. Most of the modern semiconductor devices have invariably heavily doped regions where Fermi-Dirac Integrals are required. Several attempts have been devoted to developing analytical approximations for Fermi-Dirac Integrals since numerical computations of Fermi-Dirac Integrals are difficult to use in semiconductor devices, although there are several highly accurate tabulated functions available. Most of these analytical expressions are not sufficiently suitable to be employed in semiconductor device applications due to their poor accuracy, the requirement of complicated calculations, and difficulties in differentiating and integrating. A new approximation has been developed for the Fermi-Dirac integrals of the order 1/2 by using Prony's method and discussed in this paper. The approximation is accurate enough (Mean Absolute Error (MAE) = 0.38%) and easy enough to be used in semiconductor device equations. The new approximation of Fermi-Dirac Integrals is applied to a more generalized Einstein Relation which is an important relation in semiconductor devices.

Improved efficiency in organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium doped 9,10-di(2-naphthyl) anthracene emission layer

Energy Technology Data Exchange (ETDEWEB)

Yuan Yongbo; Lian Jiarong; Li Shuang; Zhou Xiang [State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, 510275 (China)], E-mail: stszx@mail.sysu.edu.cn

2008-11-21

Organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium (Alq{sub 3}) doped 9,10-di(2-naphthyl) anthracene (ADN) as the emission layer (EML) have been fabricated. These devices exhibit efficient electroluminescence (EL) originated from the Alq{sub 3} as the mass ratio of Alq{sub 3} to ADN was varied from 1 to 50%. The devices with an optimal Alq{sub 3} mass ratio of 10 wt% showed a peak EL efficiency and an external quantum efficiency of 9.1 cd A{sup -1} and 2.7% at a luminance of 1371 cd m{sup -2}, which is improved by a factor of 2.2 compared with 4.1 cd A{sup -1} and 1.2% at a luminance of 3267 cd m{sup -2} for conventional devices with the neat Alq{sub 3} as the EML.

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

Science.gov (United States)

Rathi, Servin; Lee, Inyeal; Lim, Dongsuk; Wang, Jianwei; Ochiai, Yuichi; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan-Hyoung; Yu, Young-Jun; Kim, Philip; Kim, Gil-Ho

2015-08-12

Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

Science.gov (United States)

Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

2018-06-01

An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

Whole Device Modeling of Compact Tori: Stability and Transport Modeling of C-2W

Science.gov (United States)

Dettrick, Sean; Fulton, Daniel; Lau, Calvin; Lin, Zhihong; Ceccherini, Francesco; Galeotti, Laura; Gupta, Sangeeta; Onofri, Marco; Tajima, Toshiki; TAE Team

2017-10-01

Recent experimental evidence from the C-2U FRC experiment shows that the confinement of energy improves with inverse collisionality, similar to other high beta toroidal devices, NSTX and MAST. This motivated the construction of a new FRC experiment, C-2W, to study the energy confinement scaling at higher electron temperature. Tri Alpha Energy is working towards catalysing a community-wide collaboration to develop a Whole Device Model (WDM) of Compact Tori. One application of the WDM is the study of stability and transport properties of C-2W using two particle-in-cell codes, ANC and FPIC. These codes can be used to find new stable operating points, and to make predictions of the turbulent transport at those points. They will be used in collaboration with the C-2W experimental program to validate the codes against C-2W, mitigate experimental risk inherent in the exploration of new parameter regimes, accelerate the optimization of experimental operating scenarios, and to find operating points for future FRC reactor designs.

Characteristics of the Current-Controlled Phase Transition of VO2 Microwires for Hybrid Optoelectronic Devices

Directory of Open Access Journals (Sweden)

Arash Joushaghani

2015-08-01

Full Text Available The optical and electrical characteristics of the insulator-metal phase transition of vanadium dioxide (VO2 enable the realization of power-efficient, miniaturized hybrid optoelectronic devices. This work studies the current-controlled, two-step insulator-metal phase transition of VO2 in varying microwire geometries. Geometry-dependent scaling trends extracted from current-voltage measurements show that the first step induced by carrier injection is delocalized over the microwire, while the second, thermally-induced step is localized to a filament about 1 to 2 μm wide for 100 nm-thick sputtered VO2 films on SiO2. These effects are confirmed by direct infrared imaging, which also measures the change in optical absorption in the two steps. The difference between the threshold currents of the two steps increases as the microwires are narrowed. Micron- and sub-micron-wide VO2 structures can be used to separate the two phase transition steps in photonic and electronic devices.

Medical device-related pressure ulcers

Directory of Open Access Journals (Sweden)

Black JM

2016-08-01

Full Text Available Joyce M Black,1 Peggy Kalowes2 1Adult Health and Illness Department, College of Nursing, University of Nebraska Medical Center, Omaha, NE, 2Nursing Research and Innovation, Long Beach Memorial Miller Children’s & Women’s Hospital, Long Beach, CA, USA Abstract: Pressure ulcers from medical devices are common and can cause significant morbidity in patients of all ages. These pressure ulcers appear in the shape of the device and are most often found from the use of oxygen delivery devices. A hospital program designed to reduce the number of pressure ulcers from medical devices was successful. The program involved the development of a team that focused on skin, the results were then published for the staff to track their performance, and it was found that using foam dressings helped reduce the pressure from the device. The incidence of ulcers from medical devices has remained at zero at this hospital since this program was implemented. Keywords: pressure ulcer, medical device related

Propagation Measurements for Device-to-Device Communication in Forest Terrain

DEFF Research Database (Denmark)

Hejselbæk, Johannes; Nielsen, Jesper Ødum; Drewes, Christian

2018-01-01

In this paper, we present a measurement campaign conducted in forest terrain with focus on path-loss. The aim of the measurement campaign is to study the coverage in a Device-to-Device (D2D) communication scenario. The measurement campaign was conducted in the LTE band 8 at 917.5 MHz...... with measurement ranges extending to more than 2.5 km. The measurements have been conducted using a purpose-developed measurement system with a dynamic range of 180 dB. The measurements showed that a D2D system with transmit and receive antenna at heights of 1.5 m could achieve a range of approximately 2 km using...

Rapid detection of Cu(2+) by a paper-based microfluidic device coated with bovine serum albumin (BSA)-Au nanoclusters.

Science.gov (United States)

Fang, Xueen; Zhao, Qianqian; Cao, Hongmei; Liu, Juan; Guan, Ming; Kong, Jilie

2015-11-21

In this work, bovine serum albumin (BSA)-Au nanoclusters were used to coat a paper-based microfluidic device. This device acted as a Cu(2+) biosensor that showed fluorescence quenching on detection of copper ions. The detection limit of this sensor could be adjusted by altering the water absorbing capacity of the device. Qualitative and semi-quantitative results could be obtained visually without the aid of any advanced instruments. This sensor could test Cu(2+) rapidly with high specificity and sensitivity, which would be useful for point-of-care testing (POCT).

Irradiation technology Pt. 2. Research devices. Glossary on radiation technology. Besugarzastechnika 2. resz. Kiserleti berendezesek, sugartechnikai kislexikon

Energy Technology Data Exchange (ETDEWEB)

Foeldiak, G; Stenger, V

1982-01-01

It is a textbook and manual of a training course held at the Budapest Technical University for operators of irradiation devices. Calculation methods of radiation technology (estimation of activity variation, space dependence of dose rates, shielding, efficiency) are presented. Instructions for laboratory exercises (dose and dose rate measurements, sterilization by irradiation, handling of irradiation devices) involved in the course given. Two laboratory irradiation devices (RH-GAMMA-30, produced in the Soviet Union and the K-120-type semi-large scale device of the Isotope Institute of the Hungarian Academy of Sciences are described in detail. Handling instructions for the two devices and radiation protection regulations are given. A brief glossary in the field of radiation technology is added.

The Measurement of Spectral Characteristics and Composition of Radiation in Atlas with MEDIPIX2-USB Devices

Science.gov (United States)

Campbell, M.; Doležal, Z.; Greiffenberg, D.; Heijne, E.; Holy, T.; Idárraga, J.; Jakůbek, J.; Král, V.; Králík, M.; Lebel, C.; Leroy, C.; Llopart, X.; Lord, G.; Maneuski, D.; Ouellette, O.; Sochor, V.; Pospíšil, S.; Suk, M.; Tlustos, L.; Vykydal, Z.; Wilhelm, I.

2008-06-01

A network of devices to perform real-time measurements of the spectral characteristics and composition of radiation in the ATLAS detector and cavern during its operation is being built. This system of detectors will be a stand alone system fully capable of delivering real-time images of fluxes and spectral composition of different particle species including slow and fast neutrons. The devices are based on MEDIPIX2 pixel silicon detectors that will be operated via active USB cables and USB-Ethernet extenders through an Ethernet network by a PC located in the USA15 ATLAS control room. The installation of 14 devices inside ATLAS (detector and cavern) is in progress.

The Measurement of Spectral Characteristics and Composition of Radiation in ATLAS with MEDIPIX2-USB Devices

CERN Document Server

Campbell, M.; Greiffenberg, D.; Heijne, E.; Holy, T.; Idárraga, J.; Jakubek, J.; Král, V.; Králík, M.; Lebel, C.; Leroy, C.; Llopart, X.; Lord, G.; Maneuski, D.; Ouellette, O.; Sochor, V.; Prospísil, S.; Suk, M; Tlustos, L.; Vykydal, Z.; Wilhelm, I.

2008-01-01

A network of devices to perform real-time measurements of the spectral characteristics and composition of radiation in the ATLAS detector and cavern during its operation is being built. This system of detectors will be a stand alone system fully capable of delivering real-time images of fluxes and spectral composition of different particle species including slow and fast neutrons. The devices are based on MEDIPIX2 pixel silicon detectors that will be operated via active USB cables and USB-Ethernet extenders through an Ethernet network by a PC located in the USA15 ATLAS control room. The installation of 14 devices inside ATLAS (detector and cavern) is in progress.

A microfluidic device for 2D to 3D and 3D to 3D cell navigation

International Nuclear Information System (INIS)

Shamloo, Amir; Amirifar, Leyla

2016-01-01

Microfluidic devices have received wide attention and shown great potential in the field of tissue engineering and regenerative medicine. Investigating cell response to various stimulations is much more accurate and comprehensive with the aid of microfluidic devices. In this study, we introduced a microfluidic device by which the matrix density as a mechanical property and the concentration profile of a biochemical factor as a chemical property could be altered. Our microfluidic device has a cell tank and a cell culture chamber to mimic both 2D to 3D and 3D to 3D migration of three types of cells. Fluid shear stress is negligible on the cells and a stable concentration gradient can be obtained by diffusion. The device was designed by a numerical simulation so that the uniformity of the concentration gradients throughout the cell culture chamber was obtained. Adult neural cells were cultured within this device and they showed different branching and axonal navigation phenotypes within varying nerve growth factor (NGF) concentration profiles. Neural stem cells were also cultured within varying collagen matrix densities while exposed to NGF concentrations and they experienced 3D to 3D collective migration. By generating vascular endothelial growth factor concentration gradients, adult human dermal microvascular endothelial cells also migrated in a 2D to 3D manner and formed a stable lumen within a specific collagen matrix density. It was observed that a minimum absolute concentration and concentration gradient were required to stimulate migration of all types of the cells. This device has the advantage of changing multiple parameters simultaneously and is expected to have wide applicability in cell studies. (paper)

Protection device for a thermonuclear device

International Nuclear Information System (INIS)

Kawashima, Shuichi.

1986-01-01

Purpose: To exactly detect the void coefficients of coolants even under high magnetic fields thereby detect the overheat of a thermonuclear device at an early stage. Constitution: The protecting device of this invention comprises a laser beam generation device, a laser beam detection device and an accident detection device. The laser generation device always generates laser beams, which are permeated through coolants and detected by the laser beam detection device, the optical amount of which is transmitted to the accident detection device. The accident detection device judges the excess or insufficiency of the detected optical amount with respect to the optical amount of the laser beams under the stationary state as a reference and issues an accident signal. Since only the optical cables that do not undergo the effect of the magnetic fields are exposed to high magnetic fields in the protection device of this invention, a high reliability can be maintained. (Kamimura, M.)

A feasibility study of a 3-day basal-bolus insulin delivery device in individuals with type 2 diabetes.

Science.gov (United States)

Mader, Julia K; Lilly, Leslie C; Aberer, Felix; Korsatko, Stefan; Strock, Ellie; Mazze, Roger S; Damsbo, Peter; Pieber, Thomas R

2014-05-01

This study tested the feasibility of transition from multiple daily injections (MDI) to a 3-day, basal-bolus insulin delivery device (PaQ) for type 2 diabetes (T2D). Twenty MDI-treated individuals with T2D with HbA(1c) ≤9% (75 mmol/mol) were enrolled in a single-center, single-arm pilot study, lasting three 2-week periods: baseline (MDI), transition to PaQ, and PaQ therapy. Feasibility of use, glycemic control, safety, and patient satisfaction were assessed. Nineteen participants transitioned to PaQ treatment and demonstrated competency in assembling, placing, and using the device. Self-monitored blood glucose and blinded continuous glucose-monitoring data showed glycemic control similar to MDI. Study participants reported high satisfaction and device acceptance. PaQ treatment is both feasible and acceptable in individuals with T2D. Transition from MDI is easy and safe. PaQ treatment might lead to better therapy adherence and improvements in glycemic control and clinical outcomes.

Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics

Science.gov (United States)

Wang, Hongyue; Wang, Jinyan; Liu, Jingqian; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang

2018-03-01

Based on the self-terminating gate recess technique, two different processes featuring gate-recess-first (GF) and ohmic-contact-first (OF) were proposed for E-mode Al2O3/GaN MOSFETs. Increased maximum drain current (Idmax) ∼30% (420 vs 325 mA/mm), field-effect mobility (μFEmax) ∼67% (150 vs 90 cm2/Vs) and reduced on-state resistance (Ron) ∼42% (9.7 vs 16.8 Ω·mm) were observed in the devices fabricated by GF process. Such significant performance difference of GF- and OF-devices resulted from the presence of border traps at Al2O3/GaN interface with a time constant ∼7 × 10-6 s. Experimental results indicated that: (1) the near interface border traps in Al2O3 dielectric significantly affect device channel mobility; (2) a high temperature post-deposition annealing process could effective suppress generation of border traps.

Air-deployable oil spill sampling devices review phase 2 testing. Volume 1

International Nuclear Information System (INIS)

Hawke, L.; Dumouchel, A.; Fingas, M.; Brown, C.E.

2007-01-01

SAIC Canada tested air deployable oil sampling devices for the Emergencies Science and Technology Division of Environment Canada in order to determine the applicability and status of these devices. The 3 devices tested were: Canada's SABER (sampling autonomous buoy for evidence recovery), the United States' POPEIE (probe for oil pollution evidence in the environment); and, Sweden's SAR Floatation 2000. They were tested for buoyancy properties, drift behaviour and sampler sorbent pickup ratios. The SAR and SABER both had lesser draft and greater freeboard, while the POPEIE had much greater draft than freeboard. All 3 devices could be used for oil sample collection in that their drift characteristics would allow for the SABER and SAR devices to be placed upwind of the slick while the POPEIE device could be placed downwind of an oil spill. The sorbent testing revealed that Sefar sorbent and Spectra sorbent used in the 3 devices had negative pickup ratios for diesel but performance improved as oil viscosity increased. Both sorbents are inert and capable of collecting oil in sufficient volumes for consistent fingerprinting analysis. 10 refs., 8 tabs., 8 figs

Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

Science.gov (United States)

Wang, Fanglin; Xu, Haitao; Huang, Huixin; Ma, Ze; Wang, Sheng; Peng, Lian-Mao

2017-11-01

Film-based semiconducting carbon nanotube (CNT) photodetectors are promising candidates for industrial applications. However, unintentional doping from the environment such as water/oxygen (H2O/O2) redox, polymers, etc. changes the doping level of the CNT film. Here, we evaluate the performance of film-based barrier-free bipolar diodes (BFBDs), which are basically semiconducting CNT films asymmetrically contacted by perfect n-type ohmic contact (scandium, Sc) and p-type ohmic contact (palladium, Pd) at the two ends of the diode. We show that normal BFBD devices have large variances of forward current, reverse current, and photocurrent for different doping levels of the channel. We propose an asymmetric Y2O3-coated BFBD device in which the channel is covered by a layer of an Y2O3 film and an overlap between the Sc electrode and the Y2O3 film is designed. The Y2O3 film provides p-type doping to the channel. The overlap section increases the length of the base of the pn junction, and the diffusion current of holes is suppressed. In this way, the rectifier factors (current ratio when voltages are at +0.5 V and -0.5 V) of the asymmetric Y2O3-coated BFBD devices are around two orders of magnitude larger and the photocurrent generation is more stable compared to that of normal devices. Our results provide a way to conquer the influence of unintentional doping from the environment and suppress reverse current in pn diodes. This is beneficial to applications of CNT-based photodetectors and of importance for inspiring methods to improve the performances of devices based on other low dimensional materials.

40 CFR Table 2 to Subpart Oooo of... - Operating Limits if Using Add-On Control Devices and Capture System

Science.gov (United States)

2010-07-01

... OOOO of Part 63—Operating Limits if Using Add-On Control Devices and Capture System If you are required... 40 Protection of Environment 12 2010-07-01 2010-07-01 true Operating Limits if Using Add-On Control Devices and Capture System 2 Table 2 to Subpart OOOO of Part 63 Protection of Environment...

A role of neutral hydrogen in CHS plasmas with reheat and collapse and comparison with JIPP T-IIU tokamak plasmas

International Nuclear Information System (INIS)

Morita, S.; Yamada, H.; Iguchi, H.

1992-09-01

Results are described on NBI plasmas of the Compact Helical System (CHS). An increase in the stored energy, which is called plasma 'reheat', is observed with density peaking when gas puffing is turned off in the high density region. A plasma collapse with large increase in radiation loss occurs even in discharges whose Z eff values (typically, less than 2-3) do not show any increase when the gas puffing is continued. Both phenomena are basically explained by the edge electron temperature due to the difference in the amount of edge hydrogen neutrals. After turning off the gas puffing, the central electron density n e0 shows an increase of 80% and the density peaking factor (n e0 /n-bar e ) changes from 1.0 to 2.0, in typical cases, and a high inward velocity of the impurities appears (v = 20 m/s). The accumulation is studied in relation to the poloidal rotation and the edge temperature. These results are compared with results from plasmas with IOC- and H-modes in the JIPPT-IIU tokamak. (author)

Coupling to the lower hybrid waves with the multijunction grill

International Nuclear Information System (INIS)

Ohkubo, Kunizo; Matsumoto, Kazunori.

1992-05-01

Coupling characteristics of the multijunction grill have been studied theoretically and experimentally by using a multireflection method with the aid of scattering matrices not only at the junction plane but also at the grill mouth. The global reflection coefficients in the primary waveguide and secondary wave-guides can be estimated from the vector sum of reflecting components caused by each reflection between two scattering planes. The experimental results of scattering matrices and the global coupling agree well with calculated ones. It is shown that the multiple reflection in secondary waveguides of the four-junction grill for JIPPT-IIU tokamak is finished until three or four reflections. The length of the secondary waveguides is confirmed to be one of parameters determining the grill efficiency. (author)

Electronic and optoelectronic device applications based on ReS2

Science.gov (United States)

Liu, Erfu; Long, Mingsheng; Wang, Yaojia; Pan, Yiming; Ho, Chinghwa; Wang, Baigeng; Miao, Feng

Rhenium disulfide (ReS2) is a unique semiconducting TMD with distorted 1T structure and weak interlayer coupling. We have previously investigated its in-plane anisotropic property and electronic applications on FET and digital inverters. In this talk, we will present high responsivity phototransistors based on few-layer ReS2. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is one of the highest value among individual two-dimensional materials with similar device structures. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. The existence of trap states is proved by temperature dependent transport measurements. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future electronic and sensitive optoelectronic applications.

Cervical Proprioception in a Young Population Who Spend Long Periods on Mobile Devices: A 2-Group Comparative Observational Study.

Science.gov (United States)

Portelli, Andrew; Reid, Susan A

2018-02-01

The purpose of this study was to evaluate if young people with insidious-onset neck pain who spend long periods on mobile electronic devices (known as "text neck") have impaired cervical proprioception and if this is related to time on devices. A 2-group comparative observational study was conducted at an Australian university. Twenty-two participants with text neck and 22 asymptomatic controls, all of whom were 18 to 35 years old and spent ≥4 hours per day on unsupported electronic devices, were assessed using the head repositioning accuracy (HRA) test. Differences between groups were calculated using independent sample t-tests, and correlations between neck pain intensity, time on devices, and HRA test were performed using Pearson's bivariate analysis. During cervical flexion, those with text neck (n = 22, mean age ± standard deviation [SD]: 21 ± 4 years, 59% female) had a 3.9° (SD: 1.4°) repositioning error, and the control group (n = 22, 20 ± 1 years, 68% female) had a 2.9° (SD: 1.2°) error. The mean difference was 1° (95% confidence interval: 0-2, P = .02). For other cervical movements, there was no difference between groups. There was a moderately significant correlation (P ≤ .05) between time spent on electronic devices and cervical pain intensity and between cervical pain intensity and HRA during flexion. The participants with text neck had a greater proprioceptive error during cervical flexion compared with controls. This could be related to neck pain and time spent on electronic devices. Copyright © 2018. Published by Elsevier Inc.

Secure-Network-Coding-Based File Sharing via Device-to-Device Communication

OpenAIRE

Wang, Lei; Wang, Qing

2017-01-01

In order to increase the efficiency and security of file sharing in the next-generation networks, this paper proposes a large scale file sharing scheme based on secure network coding via device-to-device (D2D) communication. In our scheme, when a user needs to share data with others in the same area, the source node and all the intermediate nodes need to perform secure network coding operation before forwarding the received data. This process continues until all the mobile devices in the netw...

Design and finite element simulation of vacuum systems for insertion devices in Indus-2 storage ring

International Nuclear Information System (INIS)

Yadav, D.P.; Bais, Vijay; Sridhar, R.; Dhimole, Vivek K.; Nitesh, Suthar; Rawal, B.R.; Chogaonkar, Swati

2015-01-01

Indus-2 is a 2.5 GeV, 300 mA, Synchrotron Radiation Source (SRS) located at Raja Ramanna Centre for Advanced Technology, Indore. As part of insertion device (ID) development programme two new devices namely, APPLE-2 (Advanced Planar Polarized Light Emitter) type Undulator (also known as U-3 Undulator) and 5 Tesla superconducting wavelength shifter (SWLS) are being developed. APPLE-2 will generate variably polarized synchrotron radiation (SR) required for carrying out magnetic circular dichroism (MCD) and magnetic linear dichroism (MLD) experiments and SWLS will generate synchrotron radiation (SR) with critical photon energy of about 20.8 keV for Energy Dispersive XRD beam line. This paper describes design details and finite element analysis results of various simulations carried out for the vacuum systems of these IDs

Criticality alarm device

International Nuclear Information System (INIS)

Kasai, Kenji.

1994-01-01

The device of the present invention is utilized, for example, to a reprocessing facility for storing and processing nuclear fuels and measures and controls the nuclear fuel assembly system so as not to exceed criticality. That is, a conventional criticality alarm device applies a predetermined processing to neutron fluxes generated from a nuclear fuel assembly system containing nuclear fuels and outputs an alarm. The device of the present invention comprises (1) a neutron flux supply source for increasing and decreasing neutron fluxes periodically and supplying them to nuclear fuel assemblies, (2) a detector for detecting neutron fluxes in the nuclear fuel assemblies, (3) a critical state judging section for judging the critical state of the nuclear fuel assemblies based on the periodically changing signals obtained from the detector (2) and (4) an alarm section for outputting criticality alarms depending on the result of the judgement. The device of the present invention can accurately recognize the critical state of the nuclear fuel assembly system and can forecast reaching of the nuclear fuel assembly to criticality or prompt neutron critical state. (I.S.)

Comparison of two systems for rigidly connecting 2.0-mm bone screws to an implantable device : in vitro stability testing

NARCIS (Netherlands)

van Loon, JP; de Bont, LGM; Verkerke, GJ

The stability of a screw-fixed implantable device can be improved by eliminating the freedom of movement between the screws and the device. Two systems have been developed for rigidly connecting 2.0-mm bone screws to an implantable device, and the aim of this study was to test and compare the

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

Science.gov (United States)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

Ergonomic material-handling device

Science.gov (United States)

Barsnick, Lance E.; Zalk, David M.; Perry, Catherine M.; Biggs, Terry; Tageson, Robert E.

2004-08-24

A hand-held ergonomic material-handling device capable of moving heavy objects, such as large waste containers and other large objects requiring mechanical assistance. The ergonomic material-handling device can be used with neutral postures of the back, shoulders, wrists and knees, thereby reducing potential injury to the user. The device involves two key features: 1) gives the user the ability to adjust the height of the handles of the device to ergonomically fit the needs of the user's back, wrists and shoulders; and 2) has a rounded handlebar shape, as well as the size and configuration of the handles which keep the user's wrists in a neutral posture during manipulation of the device.

Development of a wireless blood pressure measuring device with smart mobile device.

Science.gov (United States)

İlhan, İlhan; Yıldız, İbrahim; Kayrak, Mehmet

2016-03-01

Today, smart mobile devices (telephones and tablets) are very commonly used due to their powerful hardware and useful features. According to an eMarketer report, in 2014 there were 1.76 billion smartphone users (excluding users of tablets) in the world; it is predicted that this number will rise by 15.9% to 2.04 billion in 2015. It is thought that these devices can be used successfully in biomedical applications. A wireless blood pressure measuring device used together with a smart mobile device was developed in this study. By means of an interface developed for smart mobile devices with Android and iOS operating systems, a smart mobile device was used both as an indicator and as a control device. The cuff communicating with this device through Bluetooth was designed to measure blood pressure via the arm. A digital filter was used on the cuff instead of the traditional analog signal processing and filtering circuit. The newly developed blood pressure measuring device was tested on 18 patients and 20 healthy individuals of different ages under a physician's supervision. When the test results were compared with the measurements made using a sphygmomanometer, it was shown that an average 93.52% accuracy in sick individuals and 94.53% accuracy in healthy individuals could be achieved with the new device. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Transcatheter Device Closure of Patent Ductus Arteriosus

International Nuclear Information System (INIS)

Sultan, M.; Ullah, M.; Sadiq, N.; Akhtar, K.; Akbar, H.

2014-01-01

Objective: To determine the efficacy, safety and immediate complications encountered during percutaneous device closure of patent ductus arteriosus (PDA). Study Design: Case series. Place and Duration of Study: Department of Paediatric Cardiology, AFIC/NIHD, Rawalpindi, from January 2005 to December 2010. Methodology: Consecutive 500 patients who underwent attempted transcatheter PDA device closure were included in the study. Device type position, success of closure and complications were described as frequency percentage. Results: In 491 cases (98.2%), PDA was successfully occluded including 4 cases (0.8%) where devices were dislodged but retrieved and redeployed in Cath laboratory. PDA occluder devices used in 448 cases (91%) while coils (single or multiple) were used in 42 cases (8.5%) and in one case (0.2%) ASD occluder device was used to occlude the PDA. There were 09 (1.8%) unsuccessful cases, 06 (1.2%) were abandoned as ducts were considered unsuitable for device closure, 02 (0.4%) devices dislodged and needed surgical retrieval and one case (0.2%) was abandoned due to faulty equipment. The narrowest PDA diameter ranged from 0.5 - 14 mm with mean of 4.5 +- 2.4 mm. There was a single (0.2%) mortality. Conclusion: Transcatheter occlusion of PDA by coil or occluder device is an effective therapeutic option with high success rate. Complication rate is low in the hands of skilled operators yet paediatric cardiac surgical back-up cover is mandatory. (author)

Electronic Payments using Mobile Communication Devices

NARCIS (Netherlands)

Waaij, B.D. van der; Siljee, B.I.J.; Broekhuijsen, B.J.; Ponsioen, C.; Maas, A.; Aten, R.M.; Hoepman, J.H.; Loon, J.H. van; Smit, M.

2009-01-01

A method of making a payment uses a first mobile communication device (1) and a second mobile communication device (2), each mobile communication device being provided with a respective near field communication unit (11, 21) and at least one of the mobile communication devices being provided with an

Enhancement of photovoltaic characteristics of nanocrystalline 2,3-naphthalocyanine thin film-based organic devices

International Nuclear Information System (INIS)

Farag, A.A.M.; Osiris, W.G.; Ammar, A.H.

2012-01-01

Graphical abstract: Scanning electron microscopy (SEM) image of NPC films: (a) cross section view, (b) surface morphology of the film at 300 K, (c) surface morphology of the annealed film at 350 K, (d) surface morphology of the annealed film at 400 K, (e) surface morphology of the annealed film at 450 K, and (f) surface morphology of the annealed film at 500 K. Highlights: ► The absorption edge shifts to the lower energy for the annealed NPC film. ► The device of Au/NPC/ITO exhibit rectifying characteristics. ► The devices show improvement in photovoltaic parameters. ► The power conversion efficiency of the devices show enhancement under annealing. - Abstract: In this work, nanocrystalline thin films of 2,3-naphthalocyanine (NPC) were successfully deposited by a thermal evaporation technique at room temperature under high vacuum (∼10 −4 Pa). The crystal structure and surface morphology were measured using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. A preferred orientation along the (0 0 1) direction was observed in all the studied films and the average crystallite size was calculated. Scanning electron miscroscopy (SEM) images of NPC films at different thermal treatment indicated significant changes on surface level patterns and gave clear evidence of agglomeration of nanocrystalline structures. The molecular structural properties of the thin films were characterized using Fourier transform infrared spectroscopy (FTIR), which revealed the stability of the chemical bonds of the compound under thermal treatment. The dark electrical conductivity of the films at various heat treatment stages showed that NPC films have a better conductivity than that of its earlier reported naphthalocyanine films and the activation energy was found to decrease with annealing temperature. The absorption edge shifted to the lower energy as a consequence of the thermal annealing of the film and the fundamental absorption edges correspond to a

Device-Centric Monitoring for Mobile Device Management

Directory of Open Access Journals (Sweden)

Luke Chircop

2016-03-01

Full Text Available The ubiquity of computing devices has led to an increased need to ensure not only that the applications deployed on them are correct with respect to their specifications, but also that the devices are used in an appropriate manner, especially in situations where the device is provided by a party other than the actual user. Much work which has been done on runtime verification for mobile devices and operating systems is mostly application-centric, resulting in global, device-centric properties (e.g. the user may not send more than 100 messages per day across all applications being difficult or impossible to verify. In this paper we present a device-centric approach to runtime verify the device behaviour against a device policy with the different applications acting as independent components contributing to the overall behaviour of the device. We also present an implementation for Android devices, and evaluate it on a number of device-centric policies, reporting the empirical results obtained.

Influence of Nitrogen Doping on Device Operation for TiO2-Based Solid-State Dye-Sensitized Solar Cells: Photo-Physics from Materials to Devices

Directory of Open Access Journals (Sweden)

Jin Wang

2016-02-01

Full Text Available Solid-state dye-sensitized solar cells (ssDSSC constitute a major approach to photovoltaic energy conversion with efficiencies over 8% reported thanks to the rational design of efficient porous metal oxide electrodes, organic chromophores, and hole transporters. Among the various strategies used to push the performance ahead, doping of the nanocrystalline titanium dioxide (TiO2 electrode is regularly proposed to extend the photo-activity of the materials into the visible range. However, although various beneficial effects for device performance have been observed in the literature, they remain strongly dependent on the method used for the production of the metal oxide, and the influence of nitrogen atoms on charge kinetics remains unclear. To shed light on this open question, we synthesized a set of N-doped TiO2 nanopowders with various nitrogen contents, and exploited them for the fabrication of ssDSSC. Particularly, we carefully analyzed the localization of the dopants using X-ray photo-electron spectroscopy (XPS and monitored their influence on the photo-induced charge kinetics probed both at the material and device levels. We demonstrate a strong correlation between the kinetics of photo-induced charge carriers probed both at the level of the nanopowders and at the level of working solar cells, illustrating a direct transposition of the photo-physic properties from materials to devices.

Solar-energy production and energy-efficient lighting: photovoltaic devices and white-light-emitting diodes using poly(2,7-fluorene), poly(2,7-carbazole), and poly(2,7-dibenzosilole) derivatives.

Science.gov (United States)

Beaupré, Serge; Boudreault, Pierre-Luc T; Leclerc, Mario

2010-02-23

World energy needs grow each year. To address global warming and climate changes the search for renewable energy sources with limited greenhouse gas emissions and the development of energy-efficient lighting devices are underway. This Review reports recent progress made in the synthesis and characterization of conjugated polymers based on bridged phenylenes, namely, poly(2,7-fluorene)s, poly(2,7-carbazole)s, and poly(2,7-dibenzosilole)s, for applications in solar cells and white-light-emitting diodes. The main strategies and remaining challenges in the development of reliable and low-cost renewable sources of energy and energy-saving lighting devices are discussed.

Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber.

Science.gov (United States)

Shin, Donghyeop; Zhu, Tong; Huang, Xuan; Gunawan, Oki; Blum, Volker; Mitzi, David B

2017-06-01

In recent years, Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials have enabled important progress in associated thin-film photovoltaic (PV) technology, while avoiding scarce and/or toxic metals; however, cationic disorder and associated band tailing fundamentally limit device performance. Cu 2 BaSnS 4 (CBTS) has recently been proposed as a prospective alternative large bandgap (~2 eV), environmentally friendly PV material, with ~2% power conversion efficiency (PCE) already demonstrated in corresponding devices. In this study, a two-step process (i.e., precursor sputter deposition followed by successive sulfurization/selenization) yields high-quality nominally pinhole-free films with large (>1 µm) grains of selenium-incorporated (x = 3) Cu 2 BaSnS 4- x Se x (CBTSSe) for high-efficiency PV devices. By incorporating Se in the sulfide film, absorber layers with 1.55 eV bandgap, ideal for single-junction PV, have been achieved within the CBTSSe trigonal structural family. The abrupt transition in quantum efficiency data for wavelengths above the absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence of band tailing in CBTSSe compared to CZTSSe. For the first time, by combining bandgap tuning with an air-annealing step, a CBTSSe-based PV device with 5.2% PCE (total area 0.425 cm 2 ) is reported, >2.5× better than the previous champion pure sulfide device. These results suggest substantial promise for the emerging Se-rich Cu 2 BaSnS 4- x Se x family for high-efficiency and earth-abundant PV. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

Science.gov (United States)

Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

2018-06-01

Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

An intelligent 1:2 demultiplexer as an intracellular theranostic device based on DNA/Ag cluster-gated nanovehicles

Science.gov (United States)

Ran, Xiang; Wang, Zhenzhen; Ju, Enguo; Pu, Fang; Song, Yanqiu; Ren, Jinsong; Qu, Xiaogang

2018-02-01

The logic device demultiplexer can convey a single input signal into one of multiple output channels. The choice of the output channel is controlled by a selector. Several molecules and biomolecules have been used to mimic the function of a demultiplexer. However, the practical application of logic devices still remains a big challenge. Herein, we design and construct an intelligent 1:2 demultiplexer as a theranostic device based on azobenzene (azo)-modified and DNA/Ag cluster-gated nanovehicles. The configuration of azo and the conformation of the DNA ensemble can be regulated by light irradiation and pH, respectively. The demultiplexer which uses light as the input and acid as the selector can emit red fluorescence or a release drug under different conditions. Depending on different cells, the intelligent logic device can select the mode of cellular imaging in healthy cells or tumor therapy in tumor cells. The study incorporates the logic gate with the theranostic device, paving the way for tangible applications of logic gates in the future.

Broadband modulation of terahertz waves through electrically driven hybrid bowtie antenna-VO2 devices.

Science.gov (United States)

Han, Chunrui; Parrott, Edward P J; Humbert, Georges; Crunteanu, Aurelian; Pickwell-MacPherson, Emma

2017-10-05

Broadband modulation of terahertz (THz) light is experimentally realized through the electrically driven metal-insulator phase transition of vanadium dioxide (VO 2 ) in hybrid metal antenna-VO 2 devices. The devices consist of VO 2 active layers and bowtie antenna arrays, such that the electrically driven phase transition can be realized by applying an external voltage between adjacent metal wires extended to a large area array. The modulation depth of the terahertz light can be initially enhanced by the metal wires on top of VO 2 and then improved through the addition of specific bowties in between the wires. As a result, a terahertz wave with a large beam size (~10 mm) can be modulated within the measurable spectral range (0.3-2.5 THz) with a frequency independent modulation depth as high as 0.9, and the minimum amplitude transmission down to 0.06. Moreover, the electrical switch on/off phase transition depends very much on the size of the VO 2 area, indicating that smaller VO 2 regions lead to higher modulation speeds and lower phase transition voltages. With the capabilities in actively tuning the beam size, modulation depth, modulation bandwidth as well as the modulation speed of THz waves, our study paves the way in implementing multifunctional components for terahertz applications.

Two dimension (2-D) graphene-based nanomaterials as signal amplification elements in electrochemical microfluidic immune-devices: Recent advances

Energy Technology Data Exchange (ETDEWEB)

Hasanzadeh, Mohammad, E-mail: mhmmd_hasanzadeh@yahoo.com [Drug Applied Research Center, Tabriz University of Medical Sciences, Tabriz 51664 (Iran, Islamic Republic of); Pharmaceutical Analysis Research Center, Tabriz University of Medical Sciences, Tabriz 51664 (Iran, Islamic Republic of); Shadjou, Nasrin [Department of Nanochemistry, Nano Technology Center and Faculty of Chemistry, Urmia University, Urmia (Iran, Islamic Republic of); Mokhtarzadeh, Ahad [School of Medicine, Gonabad University of Medical Sciences, Gonabad (Iran, Islamic Republic of); Department of Biotechnology, Higher Education Institute of Rab-Rashid, Tabriz (Iran, Islamic Republic of); Pharmaceutical Research Center, School of Pharmacy, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Ramezani, Mohammad [Pharmaceutical Research Center, School of Pharmacy, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of)

2016-11-01

Graphene is a 2-D carbon nanomaterial with many distinctive properties that are electrochemically beneficial, such as large surface-to-volume ratio, lowered power usage, high conductivity and electron mobility. Graphene-based electrochemical immune-devices have recently gained much importance for detecting antigens and biomarkers responsible for cancer diagnosis. This review describes fabrication and chemical modification of the surfaces of graphene for immunesensing applications. We also present a comprehensive overview of current developments and key issues in the determination of some biological molecules with particular emphasis on evaluating the models. This review focuses mostly on new developments in the last 5 years in development of chip architecture and integration, different sensing modes that can be used in conjunction with microfluidics, and new applications that have emerged or have been demonstrated; it also aims to point out where future research can be directed to in these areas. - Highlights: • Graphene-based immune-devices have been used for biomedical testing. • Two dimension (2-D) graphene-based immune-devices were discussed. • Current state-of-the-art in graphene-based immune-devices was reflected.

Two dimension (2-D) graphene-based nanomaterials as signal amplification elements in electrochemical microfluidic immune-devices: Recent advances

International Nuclear Information System (INIS)

Hasanzadeh, Mohammad; Shadjou, Nasrin; Mokhtarzadeh, Ahad; Ramezani, Mohammad

2016-01-01

Graphene is a 2-D carbon nanomaterial with many distinctive properties that are electrochemically beneficial, such as large surface-to-volume ratio, lowered power usage, high conductivity and electron mobility. Graphene-based electrochemical immune-devices have recently gained much importance for detecting antigens and biomarkers responsible for cancer diagnosis. This review describes fabrication and chemical modification of the surfaces of graphene for immunesensing applications. We also present a comprehensive overview of current developments and key issues in the determination of some biological molecules with particular emphasis on evaluating the models. This review focuses mostly on new developments in the last 5 years in development of chip architecture and integration, different sensing modes that can be used in conjunction with microfluidics, and new applications that have emerged or have been demonstrated; it also aims to point out where future research can be directed to in these areas. - Highlights: • Graphene-based immune-devices have been used for biomedical testing. • Two dimension (2-D) graphene-based immune-devices were discussed. • Current state-of-the-art in graphene-based immune-devices was reflected.

ERO modeling of Cr sputtering in the linear plasma device PSI-2

Science.gov (United States)

Eksaeva, A.; Borodin, D.; Kreter, A.; Nishijima, D.; Pospieszczyk, A.; Schlummer, T.; Ertmer, S.; Terra, A.; Unterberg, B.; Kirschner, A.; Romazanov, J.; Brezinsek, S.; Rasinski, M.; Henderson, S.; O'Mullane, M.; Summers, H.; Bluteau, M.; Marenkov, E.

2017-12-01

The prediction of the first wall deterioration and possible plasma contamination by impurities is a high priority task for ITER. 3D Monte-Carlo code ERO is a tool for modeling of eroded impurity transport and spectroscopy in plasma devices useful for experiment interpretation. Chromium (Cr) is a fusion-relevant reactor wall element (e.g. component of RAFM steels expected for use in DEMO). Linear plasma devices including PSI-2 are effective tools for investigations of plasma-surface interaction effects, allowing continuous plasma operation and good control over irradiation parameters. Experiments on Cr sputtering were conducted at PSI-2. In these experiments the Cr erosion was measured by three techniques: mass loss of the sample, quartz micro-balance of deposited impurities at a distance from it and optical emission spectroscopy. Experiments were modeled with the 3D Monte-Carlo code ERO, previously validated by application to similar experiments with tungsten (W). The simulations are demonstrated to reproduce the main experimental outcomes proving the quality of the sputtering data used. A significant focuses of the paper is the usage and validation of atomic data (resent metastable-resolved dataset from ADAS) for interpretation of Cr spectroscopy. Initial population of quasi-metastable state was fitted by matching the modeling with the experimental line intensity profiles.

In vitro and in vivo evaluation of a new large animal spirometry device using mainstream CO2 flow sensors.

Science.gov (United States)

Ambrisko, T D; Lammer, V; Schramel, J P; Moens, Y P S

2014-07-01

A spirometry device equipped with mainstream CO2 flow sensor is not available for large animal anaesthesia. To measure the resistance of a new large animal spirometry device and assess its agreement with reference methods for volume measurements. In vitro experiment and crossover study using anaesthetised horses. A flow partitioning device (FPD) equipped with 4 human CO2 flow sensors was tested. Pressure differences were measured across the whole FPD and across each sensor separately using air flows (range: 90-720 l/min). One sensor was connected to a spirometry monitor for in vitro volume (3, 5 and 7 l) measurements. These measurements were compared with a reference method. Five anaesthetised horses were used for tidal volume (VT) measurements using the FPD and a horse-lite sensor (reference method). Bland-Altman analysis, ANOVA and linear regression analysis were used for data analysis. Pressure differences across each sensor were similar suggesting equal flow partitioning. The resistance of the device increased with flow (range: 0.3-1.5 cmH2 O s/l) and was higher than that of the horse-lite. The limits of agreement for volume measurements were within -1 and 2% in vitro and -12 and 0% in vivo. Nine of 147 VT measurements in horses were outside of the ± 10% limits of acceptance but most of these erroneous measurements occurred with VTs lower than 4 l. The determined correction factor for volume measurements was 3.97 ± 0.03. The limits of agreement for volume measurements by the new device were within ± 10% using clinically relevant range of volumes. The new spirometry device can be recommended for measurement of VT in adult Warmblood horses. © 2013 EVJ Ltd.

Power source device for thermonuclear device

International Nuclear Information System (INIS)

Ozaki, Akira.

1992-01-01

The present invention provides a small sized and economical power source device for a thermonuclear device. That is, the device comprises a conversion device having a rated power determined by a power required during a plasma current excitation period and a conversion device having a rated power determined by a power required during a plasma current maintaining period, connected in series to each other. Then, for the former conversion device, power is supplied from an electric power generator and, for the latter, power is supplied from a power system. With such a constitution, during the plasma electric current maintaining period for substantially continuous operation, it is possible to conduct bypassing paired operation for the former conversion device while the electric power generator is put under no load. Further, since a short period rated power may be suffice for the former conversion device and the electric power generator having the great rated power required for the plasma electric current excitation period, they can be reduced in the size and made economical. On the other hand, since the power required for the plasma current maintaining period is relatively small, the capacity of the continuous rated conversion device may be small, and the power can be received from the power system. (I.S.)

Digital device for synchronous storage

International Nuclear Information System (INIS)

Kobzar', Yu.M.; Kovtun, V.G.; Pashechko, N.I.

1991-01-01

Synchronous storage digital device for IR electron-photon emission spectrometer operating with analogue-to-digital converter F4223 or monocrystal converter K572PV1 is described. The device accomplished deduction of noise-background in each storage cycle. Summation and deduction operational time equals 90 ns, device output code discharge - 20, number of storages -2 23

Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices

Science.gov (United States)

Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

2018-02-01

In the current work, a tunneling barrier device made of 20 nm thick Sb2Te3 layer deposited onto 500 nm thick CdS is designed and characterized. The design included a Yb metallic substrate and Ag point contact of area of 10-3 cm2. The heterojunction properties are investigated by means of x-ray diffraction and impedance spectroscopy techniques. It is observed that the coating of the Sb2Te3 onto the surface of CdS causes a further deformation to the already strained structure of hexagonal CdS. The designed energy band diagram for the CdS/Sb2Te3 suggests a straddling type of heterojunction with an estimated conduction and valence band offsets of 0.35 and 1.74 eV, respectively. In addition, the analysis of the capacitance-voltage characteristic curve revealed a depletion region width of 14 nm. On the other hand, the capacitance and conductivity spectra which are analyzed in the frequency domain of 0.001-1.80 GHz indicated that the conduction in the device is dominated by the quantum mechanical tunneling in the region below 0.26 GHz and by the correlated barrier hopping in the remaining region. While the modeling of the conductivity spectra allowed investigation of the density of states near Fermi levels and an average scattering time of 1.0 ns, the capacitance spectra exhibited resonance at 0.26 GHz followed by negative differential capacitance effect in the frequency domain of 0.26-1.8 GHz. Furthermore, the evaluation of the impedance and reflection coefficient spectra indicated the usability of these devices as wide range low pass filters with ideal values of voltage standing wave ratios.

ALS insertion devices

International Nuclear Information System (INIS)

Hoyer, E.; Chin, J.; Halbach, K.; Hassenzahl, W.V.; Humphries, D.; Kincaid, B.; Lancaster, H.; Plate, D.

1990-11-01

The Advanced Light Source (ALS), the first US third generation synchrotron radiation source, is currently under construction at the Lawrence Berkeley Laboratory. The low-emittance, 1.5 GeV electron storage ring and the insertion devices are specifically designed to produce high brightness beams in the UV to soft X-Ray range. The planned initial complement of insertion devices includes four 4.6 m long undulators, with period lengths of 3.9 cm, 5.0 cm (2) and 8.0 cm, and a 2.9 m long wiggler of 16 cm period length. Undulator design is well advanced and fabrication has begun on the 5.0 cm and 8.0 cm period length undulators. This paper discusses ALS insertion device requirements; general design philosophy; and design of the magnetic structure, support structure/drive systems, control system and vacuum system. 18 refs., 9 figs., 5 tabs

Flaw detection device

International Nuclear Information System (INIS)

Sasahara, Toshihiko

1998-01-01

The present invention provides a device for detecting welded portions of a reactor pressure vessel. Namely, the device of the present invention comprises (1) a casing to be disposed on the surface to be detected, (2) a probe driving means loaded to the casing, (3) a probe driven along the surface to be detected and (4) a pressure reduction means for keeping the hollow portion in the casing to an evacuated atmosphere. The casing comprises a flexible suction edge to be tightly in contact with the surface to be tested for maintaining the air tight state, (6) a guide wheel for moving the casing along the surface to be tested and (7) a handle for performing transferring operation. The flaw detection device thus constituted has following features. The working efficiency upon conducting detection is improved. The influence of the weight of the device on the detection is small. The device can be applied on the surface of a nonmagnetic material. The efficiency for the flaw detection can be improved. (I.S.)

Electrical Transport and Low-Frequency Noise in Chemical Vapor Deposited Single-Layer MoS2 Devices

Science.gov (United States)

2014-03-18

PERSON 19b. TELEPHONE NUMBER Pullickel Ajayan Deepak Sharma, Matin Amani, Abhishek Motayed, Pankaj B. Shah, A. Glen Birdwell, Sina Najmaei, Pulickel...in chemical vapor deposited single-layer MoS2 devices Deepak Sharma1,2, Matin Amani3, Abhishek Motayed2,4, Pankaj B Shah3, A Glen Birdwell3, Sina

Integrated control rod monitoring device

International Nuclear Information System (INIS)

Saito, Katsuhiro

1997-01-01

The present invention provides a device in which an entire control rod driving time measuring device and a control rod position support device in a reactor building and a central control chamber are integrated systematically to save hardwares such as a signal input/output device and signal cables between boards. Namely, (1) functions of the entire control rod driving time measuring device for monitoring control rods which control the reactor power and a control rod position indication device are integrated into one identical system. Then, the entire devices can be made compact by the integration of the functions. (2) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated in a central operation board and a board in the site. Then, the place for the installation of them can be used in common in any of the cases. (3) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated to one identical system to save hardware to be used. Then, signal input/output devices and drift branching panel boards in the site and the central operation board can be saved, and cables for connecting both of the boards is no more necessary. (I.S.)

Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

Science.gov (United States)

Lee, N. J.; Kang, T. S.; Hu, Q.; Lee, T. S.; Yoon, T.-S.; Lee, H. H.; Yoo, E. J.; Choi, Y. J.; Kang, C. J.

2018-06-01

Tri-state resistive switching characteristics of bilayer resistive random access memory devices based on manganese oxide (MnO)/tantalum oxide (Ta2O5) have been studied. The current–voltage (I–V) characteristics of the Ag/MnO/Ta2O5/Pt device show tri-state resistive switching (RS) behavior with a high resistance state (HRS), intermediate resistance state (IRS), and low resistance state (LRS), which are controlled by the reset process. The MnO/Ta2O5 film shows bipolar RS behavior through the formation and rupture of conducting filaments without the forming process. The device shows reproducible and stable RS both from the HRS to the LRS and from the IRS to the LRS. In order to elucidate the tri-state RS mechanism in the Ag/MnO/Ta2O5/Pt device, transmission electron microscope (TEM) images are measured in the LRS, IRS and HRS. White lines like dendrites are observed in the Ta2O5 film in both the LRS and the IRS. Poole–Frenkel conduction, space charge limited conduction, and Ohmic conduction are proposed as the dominant conduction mechanisms for the Ag/MnO/Ta2O5/Pt device based on the obtained I–V characteristics and TEM images.

Ultimate turbulence experiment: simultaneous measurements of Cn2 near the ground using six devices and eight methods

Science.gov (United States)

Yatcheva, Lydia; Barros, Rui; Segel, Max; Sprung, Detlev; Sucher, Erik; Eisele, Christian; Gladysz, Szymon

2015-10-01

We have performed a series of experiments in order to simultaneously validate several devices and methods for measurement of the path-averaged refractive index structure constant ( 𝐶𝑛 2). The experiments were carried out along a horizontal urban path near the ground. Measuring turbulence in this layer is particularly important because of the prospect of using adaptive optics for free-space optical communications in an urban environment. On one hand, several commercial sensors were used: SLS20, a laser scintillometer from Scintec AG, BLS900, a largeaperture scintillometer, also from Scintec, and a 3D sonic anemometer from Thies GmbH. On the other hand, we measured turbulence strength with new approaches and devices developed in-house. Firstly, an LED array combined with a high-speed camera allowed for measurement of 𝐶𝑛 2 from raw- and differential image motion, and secondly a two-part system comprising a laser source, a Shack-Hartmann sensor and a PSF camera recoded turbulent modulation transfer functions, Zernike variances and angle-of-arrival structure functions, yielding three independent estimates of 𝐶𝑛 2. We compare the measured values yielded simultaneously by commercial and in-house developed devices and show very good agreement between 𝐶𝑛 2 values for all the methods. Limitations of each experimental method are also discussed.

Novel Simple Insulin Delivery Device Reduces Barriers to Insulin Therapy in Type 2 Diabetes

Science.gov (United States)

Hermanns, Norbert; Lilly, Leslie C.; Mader, Julia K.; Aberer, Felix; Ribitsch, Anja; Kojzar, Harald; Warner, Jay; Pieber, Thomas R.

2015-01-01

Background: The PaQ® insulin delivery system is a simple-to-use patch-on device that provides preset basal rates and bolus insulin on demand. In addition to feasibility of use, safety, and efficacy (reported elsewhere), this study analyzed the impact of PaQ on patient-reported outcomes, including barriers to insulin treatment, diabetes-related distress, and attitudes toward insulin therapy in patients with type 2 diabetes on a stable multiple daily injection (MDI) regimen. Methods: This single-center, open-label, single-arm study comprised three 2-week periods: baseline (MDI), transition from MDI to PaQ, and PaQ treatment. Validated questionnaires were administered during the baseline and PaQ treatment periods: Barriers to Insulin Treatment questionnaire (BIT), Insulin Treatment Appraisal Scale (ITAS), and Problem Areas in Diabetes scale (PAID). Results: Eighteen patients (age 59 ± 5 years, diabetes duration 15 ± 7 years, 21% female, HbA1c 7.7 ± 0.7%) completed the questionnaires. There was a strong, significant effect of PaQ use in mean BIT total scores (difference [D] = −5.4 ± 0.7.7, P = .01, effect size [d] = 0.70). Patients perceived less stigmatization by insulin injection (D = −2.2 ± 6.2, P = .18, d = 0.35), increased positive outcome (D = 1.9 ± 6.6, P = .17, d = 0.29), and less fear of injections (1.3 ± 4.8, P = .55, d = 0.28). Mean change in ITAS scores after PaQ device use showed a nonsignificant improvement of 1.71 ± 5.63 but moderate effect size (d = 0.30, P = .14). No increase in PAID scores was seen. Conclusions: The results and moderate to large effects sizes suggest that PaQ device use has beneficial and clinically relevant effects to overcoming barriers to and negative appraisal of insulin treatment, without increasing other diabetes-related distress. PMID:25670847

D-zero rototrack: first stage of D-zero 2 Tesla solenoid field mapping device

International Nuclear Information System (INIS)

Yamada, R.; Korienek, J.; Krider, J.; Lindenmeyer, C.; Miksa, D.; Miksa, R.

1997-09-01

A simple and portable field mapping device was developed at Fermilab and successfully used to test the D0 2 Tesla solenoid at Toshiba Works in Japan. A description of the mechanical structure, electric driving and control system, and software of the field mapping device is given. Four Hall probe elements of Group3 Digital Gaussmeters are mounted on the radial extension arm of a carriage, which is mounted on a central rotating beam. The system gives two dimensional motions (axial and rotational) to the Hall probes. To make the system compact and portable, we used a laptop computer with PCMCIA cards. For the control system we used commercially available software LabVIEW and Motion Toolbox, and for the data analysis we used Microsoft Excel

Predicting Peri-Device Leakage of Left Atrial Appendage Device Closure Using Novel Three-Dimensional Geometric CT Analysis.

Science.gov (United States)

Chung, Hyemoon; Jeon, Byunghwan; Chang, Hyuk-Jae; Han, Dongjin; Shim, Hackjoon; Cho, In Jeong; Shim, Chi Young; Hong, Geu-Ru; Kim, Jung-Sun; Jang, Yangsoo; Chung, Namsik

2015-12-01

After left atrial appendage (LAA) device closure, peri-device leakage into the LAA persists due to incomplete occlusion. We hypothesized that pre-procedural three-dimensional (3D) geometric analysis of the interatrial septum (IAS) and LAA orifice can predict this leakage. We investigated the predictive parameters of LAA device closure obtained from baseline cardiac computerized tomography (CT) using a novel 3D analysis system. We conducted a retrospective study of 22 patients who underwent LAA device closure. We defined peri-device leakage as the presence of a Doppler signal inside the LAA after device deployment (group 2, n = 5) compared with patients without peri-device leakage (group 1, n = 17). Conventional parameters were measured by cardiac CT. Angles θ and φ were defined between the IAS plane and the line, linking the LAA orifice center and foramen ovale. Group 2 exhibited significantly better left atrial (LA) function than group 1 (p = 0.031). Pre-procedural θ was also larger in this group (41.9° vs. 52.3°, p = 0.019). The LAA cauliflower-type morphology was more common in group 2. Overall, the patients' LA reserve significantly decreased after the procedure (21.7 mm(3) vs. 17.8 mm(3), p = 0.035). However, we observed no significant interval changes in pre- and post-procedural values of θ and φ in either group (all p > 0.05). Angles between the IAS and LAA orifice might be a novel anatomical parameter for predicting peri-device leakage after LAA device closure. In addition, 3D CT analysis of the LA and LAA orifice could be used to identify clinically favorable candidates for LAA device closure.

Preparation and characterization of Sb2Se3 devices for memory applications

Science.gov (United States)

Shylashree, N.; Uma B., V.; Dhanush, S.; Abachi, Sagar; Nisarga, A.; Aashith, K.; Sangeetha B., G.

2018-05-01

In this paper, A phase change material of Sb2Se3 was proposed for non volatile memory application. The thin film device preparation and characterization were carried out. The deposition method used was vapor evaporation technique and a thickness of 180nm was deposited. The switching between the SET and RESET state is shown by the I-V characterization. The change of phase was studied using R-V characterization. Different fundamental modes were also identified using Raman spectroscopy.

Methods for dispensing mercury into devices

Science.gov (United States)

Grossman, Mark W.; George, William A.

1987-04-28

A process for dispensing mercury into devices which requires mercury. Mercury is first electrolytically separated from either HgO or Hg.sub.2 Cl.sub.2 and plated onto a cathode wire. The cathode wire is then placed into a device requiring mercury.

Device-Centric Monitoring for Mobile Device Management

OpenAIRE

Chircop, Luke; Colombo, Christian; Pace, Gordon J.

2016-01-01

The ubiquity of computing devices has led to an increased need to ensure not only that the applications deployed on them are correct with respect to their specifications, but also that the devices are used in an appropriate manner, especially in situations where the device is provided by a party other than the actual user. Much work which has been done on runtime verification for mobile devices and operating systems is mostly application-centric, resulting in global, device-centri...

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

Science.gov (United States)

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-06-17

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

Development and application of ZM-2 drilling fluid density adjustment mixing device

Directory of Open Access Journals (Sweden)

Zongming Lei

2015-01-01

Full Text Available High-pressure shallow (gas/water flow is often hidden in the deepwater seabed, so penetrating shallow flow in drilling without BOP will be highly risky. In this case, the conventional well killing method to balance the formation pressure with back pressure generated by well head equipment is no longer suitable. Based on the analysis of structural characteristics of domestic and foreign multi-phase mixing systems, a ZM-2 drilling fluid density adjustment mixing device with independent intellectual property right was developed according to the principles of dynamic well killing. The device is mainly composed of a throttle valve, a high-precision electromagnetic flowmeter, a mixer, dumbbell-shaped nozzles, connecting pipes and other components. Fixed on the mixer are three inlets to fill heavy mud, seawater and additives. Opposed jetting is adopted to realize rapid and uniform mixing of fluids with different densities. A laboratory test was conducted to work out the relationship between throttle opening and injection flow rate and establish a linear relationship between killing fluid density and heavy mud flow. The results of field test conducted in the Nanhai No.8 drill ship showed that the mixing device was stable in operation and excellent in mixing performance. The density difference of ingredient mixture could be controlled within 0.05 g/cm3 after the mixture flowed out of the mixing chamber of the mixer of about 0.3 m long, so such high precision can meet the requirement of dynamic well killing.

Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure

Science.gov (United States)

Jiang, Hao; Stewart, Derek A.

2016-04-01

Metal oxide resistive memory devices based on Ta2O5 have demonstrated high switching speed, long endurance, and low set voltage. However, the physical origin of this improved performance is still unclear. Ta2O5 is an important archetype of a class of materials that possess an adaptive crystal structure that can respond easily to the presence of defects. Using first principles nudged elastic band calculations, we show that this adaptive crystal structure leads to low energy barriers for in-plane diffusion of oxygen vacancies in λ phase Ta2O5. Identified diffusion paths are associated with collective motion of neighboring atoms. The overall vacancy diffusion is anisotropic with higher diffusion barriers found for oxygen vacancy movement between Ta-O planes. Coupled with the fact that oxygen vacancy formation energy in Ta2O5 is relatively small, our calculated low diffusion barriers can help explain the low set voltage in Ta2O5 based resistive memory devices. Our work shows that other oxides with adaptive crystal structures could serve as potential candidates for resistive random access memory devices. We also discuss some general characteristics for ideal resistive RAM oxides that could be used in future computational material searches.

An Interference Mitigation Scheme of Device-to-Device Communications for Sensor Networks Underlying LTE-A.

Science.gov (United States)

Kim, Jeehyeong; Karim, Nzabanita Abdoul; Cho, Sunghyun

2017-05-10

Device-to-Device (D2D) communication technology has become a key factor in wireless sensor networks to form autonomous communication links among sensor nodes. Many research results for D2D have been presented to resolve different technical issues of D2D. Nevertheless, the previous works have not resolved the shortage of data rate and limited coverage of wireless sensor networks. Due to bandwidth shortages and limited communication coverage, 3rd Generation Partnership Project (3GPP) has introduced a new Device-to-Device (D2D) communication technique underlying cellular networks, which can improve spectral efficiencies by enabling the direct communication of devices in proximity without passing through enhanced-NodeB (eNB). However, to enable D2D communication in a cellular network presents a challenge with regard to radio resource management since D2D links reuse the uplink radio resources of cellular users and it can cause interference to the receiving channels of D2D user equipment (DUE). In this paper, a hybrid mechanism is proposed that uses Fractional Frequency Reuse (FFR) and Almost Blank Sub-frame (ABS) schemes to handle inter-cell interference caused by cellular user equipments (CUEs) to D2D receivers (DUE-Rxs), reusing the same resources at the cell edge area. In our case, DUE-Rxs are considered as victim nodes and CUEs as aggressor nodes, since our primary target is to minimize inter-cell interference in order to increase the signal to interference and noise ratio (SINR) of the target DUE-Rx at the cell edge area. The numerical results show that the interference level of the target D2D receiver (DUE-Rx) decreases significantly compared to the conventional FFR at the cell edge. In addition, the system throughput of the proposed scheme can be increased up to 60% compared to the conventional FFR.

MPEG-4-based 2D facial animation for mobile devices

Science.gov (United States)

Riegel, Thomas B.

2005-03-01

The enormous spread of mobile computing devices (e.g. PDA, cellular phone, palmtop, etc.) emphasizes scalable applications, since users like to run their favorite programs on the terminal they operate at that moment. Therefore appliances are of interest, which can be adapted to the hardware realities without loosing a lot of their functionalities. A good example for this is "Facial Animation," which offers an interesting way to achieve such "scalability." By employing MPEG-4, which provides an own profile for facial animation, a solution for low power terminals including mobile phones is demonstrated. From the generic 3D MPEG-4 face a specific 2D head model is derived, which consists primarily of a portrait image superposed by a suited warping mesh and adapted 2D animation rules. Thus the animation process of MPEG-4 need not be changed and standard compliant facial animation parameters can be used to displace the vertices of the mesh and warp the underlying image accordingly.

Calibration of Relative Humidity Devices in Low-pressure, Low-temperature CO2 Environment

Science.gov (United States)

Genzer, Maria; Polkko, Jouni; Nikkanen, Timo; Hieta, Maria; Harri, Ari-Matti

2017-04-01

Calibration of relative humidity devices requires in minimum two humidity points - dry (0%RH) and (near)saturation (95-100%RH) - over the expected operational temperature and pressure range of the device. In terrestrial applications these are relatively easy to achieve using for example N2 gas as dry medium, and water vapor saturation chambers for producing saturation and intermediate humidity points. But for example in applications intended for meteorological measurements on Mars there is a need to achieve at least dry and saturation points in low-temperature, low-pressure CO2 environment. We have developed a custom-made, small, relatively low-cost calibration chamber able to produce both dry points and saturation points in Martian range pressure CO2, in temperatures down to -70°C. The system utilizes a commercially available temperature chamber for temperature control, vacuum vessels and pumps. The main pressure vessel with the devices under test inside is placed inside the temperature chamber, and the pressure inside is controlled by pumps and manual valves and monitored with a commercial pressure reference with calibration traceable to national standards. Air, CO2, or if needed another gas like N2, is used for filling the vessel until the desired pressure is achieved. Another pressure vessel with a dedicated pressure pump is used as the saturation chamber. This vessel is placed in the room outside the temperature chamber, partly filled with water and used for achieving saturated water vapor in room-temperature low-pressure environment. The saturation chamber is connected to the main pressure vessel via valves. In this system dry point, low-pressure CO2 environment is achieved by filling the main pressure vessel with dry CO2 gas until the desired pressure is achieved. A constant flow of gas is maintained with the pump and valves and monitored with the pressure reference. The saturation point is then achieved by adding some water vapor from the saturation

Reliability of Czochralski-grown {beta}-BaB{sub 2}O{sub 4}(BBO) devices

Energy Technology Data Exchange (ETDEWEB)

Umezu, Nobuhiko; Fukui, Tatsuo; Okamoto, Tsutomu; Wada, Hiroyuki; Tatsuki, Kouichi; Kondo, Kenji; Kubota, Shigeo [Sony Corp., Tokyo (Japan)

1998-03-01

We have achieved more than 1000 hours-operation in 266 nm-continuous wave (CW), 100 mW-generation of all-solid-state-UV laser system using Czochralski (Cz)-grown {beta}-BaB{sub 2}O{sub 4}(BBO) crystal devices. Absorption of the Cz-grown crystal for e-ray at 266 nm was improved to 1%/cm, which is one-third lower than that of the crystal grown by top seeded solution growth (TSSG) method. Degradation rate of 266 nm generation, using 7 kHz repetition rate laser diode pumped Q switched Nd:YAG laser as a fundamental light source, was one order of magnitude lower than that of TSSG-crystal. Surface roughness of the crystal was better than 0.3 rms.-nm. HfO{sub 2} film with extremely high adhesion was deposited on the surfaces using reactive low voltage ion plating method. Our devices can be put to practical use in areas of photolithography, micro fabrication, material processing and ultra high density optical disk mastering. (author)

Progress in Z-pinch research driven by the mega-ampere device SPEED2

International Nuclear Information System (INIS)

Pavez, Cristian; Soto, Leopoldo; Moreno, Jose; Sylvester, Gustavo; Tarifeno, Ariel

2008-01-01

Several pinch configurations have being studied at the Chilean Nuclear Energy Commission using the SPEED2 generator: plasma focus, gas embedded z-pinch and wire arrays. SPEED2 is a generator based on Marx technology (4.1 μF equivalent Marx generator capacity, 300 kV, 4 MA in short circuit, 187 kJ, 400 ns rise time, dI/dt∼10 13 A/s). Currently the device is being operated at 70kJ stored energy producing a peak current of 2.4 MA in short circuit. In this work results related to studies in gas embedded z-pinch in deuterium and studies in wire arrays are presented.

Progress in Z-pinch research driven by the mega-ampere device SPEED2

International Nuclear Information System (INIS)

Pavez, Cristian; Soto, Leopoldo; Moreno, Jose; Tarifeno, Ariel; Sylvester, Gustavo

2008-01-01

Several pinch configurations have being studied at the Chilean Nuclear Energy Commission using the SPEED2 generator: plasma focus, gas embedded z-pinch and wire arrays. SPEED2 is a generator based on Marx technology (4.1 μF equivalent Marx generator capacity, 300 kV, 4 MA in short circuit, 187 kJ, 400 ns rise time, dI/dt∼10 13 A/s). Currently the device is being operated at 70kJ stored energy producing a peak current of 2.4 MA in short circuit. In this work results related to studies in gas embedded z-pinch in deuterium and studies in wire arrays are presented

Social-Aware Relay Selection for Cooperative Multicast Device-to-Device Communications

Directory of Open Access Journals (Sweden)

Francesco Chiti

2017-12-01

Full Text Available The increasing use of social networks such as Facebook, Twitter, and Instagram to share photos, video streaming, and music among friends has generated a huge increase in the amount of data traffic over wireless networks. This social behavior has triggered new communication paradigms such as device-to-device (D2D and relaying communication schemes, which are both considered as strong drivers for the next fifth-generation (5G cellular systems. Recently, the social-aware layer and its relationship to and influence on the physical communications layer have gained great attention as emerging focus points. We focus here on the case of relaying communications to pursue the multicast data dissemination to a group of users forming a social community through a relay node, according to the extension of the D2D mode to the case of device-to-many devices. Moreover, in our case, the source selects the device to act as the relay among different users of the multicast group by taking into account both the propagation link conditions and the relay social-trust level with the constraint of minimizing the end-to-end content delivery delay. An optimization procedure is also proposed in order to achieve the best performance. Finally, numerical results are provided to highlight the advantages of considering the impact of social level on the end-to-end delivery delay in the integrated social–physical network in comparison with the classical relay-assisted multicast communications for which the relay social-trust level is not considered.

Device controllers using an industrial personal computer of the PF 2.5-GeV Electron Linac at KEK

International Nuclear Information System (INIS)

Otake, Yuji; Yokota, Mitsuhiro; Kakihara, Kazuhisa; Ogawa, Yujiro; Ohsawa, Satoshi; Shidara, Tetsuo; Nakahara, Kazuo

1992-01-01

Device controllers for electron guns and slits using an industrial personal computer have been designed and installed in the Photon Factory 2.5-GeV Electron Linac at KEK. The design concept of the controllers is to realize a reliable system and good productivity of hardware and software by using an industrial personal computer and a programmable sequence controller. The device controllers have been working reliably for several years. (author)

Coating, Degrading and Testing of Organic Polymer Devices - Reducing the route from Laboratory to Production scale devices

DEFF Research Database (Denmark)

Dam, Henrik Friis

volume, which for spin coating allowed making a single 1 cm2 device, using the mini roll coater (MRC) enable the coating of a 100 cm2 area, resulting in 60 1cm2 devices with the present mask designs. With the relative expensive polymers, this translates into a large saving for performing the same amount...

Thermonuclear device

International Nuclear Information System (INIS)

Oosaki, Osamu; Masuda, Kenju.

1980-01-01

Purpose: To provide excellent electric properties and high reliability in a thermonuclear device by improving a current collecting board connected to a coil device. Constitution: A current collecting board element perforated with an opening for enserting a connecting terminal is sized to be inserted into a plating tank, and is surface treated in the plating tank. Only the current collecting board element preferably surface treated is picked up. A plurality of such current collecting board elements are connected and welded to form a large current collecting board. In this manner, the current collecting board having several m 2 to several ten order m 2 in area can be obtained as preferably surface treated at the connecting terminal hole. The current collecting board element can be determined in shape with the existing facility without increasing the size of a surface treating tank. (Kamimura, M.)

Evaluation of pharmacokinetics, user handling, and tolerability of peginterferon alfa-2a (40 kDa) delivered via a disposable autoinjector device

Science.gov (United States)

Varunok, Peter; Lawitz, Eric; Beavers, Kimberly L; Matusow, Gary; Leong, Ruby; Lambert, Nathalie; Bernaards, Coen; Solsky, Jonathan; Brennan, Barbara J; Wat, Cynthia; Bertasso, Anne

2011-01-01

Background Peginterferon alfa-2a (40 kDa) is currently administered using a prefilled syringe. The peginterferon alfa-2a disposable autoinjector is a new safety-engineered device designed to facilitate injection and reduce the risk of needlestick injuries. The analysis of two open-label Phase I trials evaluated the pharmacokinetics, successful administration, and tolerability of peginterferon alfa-2a when using the autoinjector. The studies were performed to support the filing and registration of the autoinjector device. Methods In trial 1, 50 healthy adult subjects received one 180 μg dose of peginterferon alfa-2a via the autoinjector. Serial blood samples were collected predose, up to 336 hours following drug administration, and at follow-up (28 ± 3 days post-dosing) for noncompartmental pharmacokinetic analysis. Trial 2 randomized 60 adult patients with chronic hepatitis C to 180 μg peginterferon alfa-2a once weekly by the autoinjector or prefilled syringe for 3 weeks followed by the alternative device (prefilled syringe or autoinjector, respectively) for 3 weeks. Patients also received ribavirin. Administration by the devices was evaluated under direct observation by a study staff member and by patient subjective assessment. Results In trial 1, following a single dose of peginterferon alfa-2a, the maximum plasma concentration was 16.1 ± 5.3 ng/mL (mean ± standard deviation), and area under the concentration time curve (0–168 hours) was 1996 ± 613 ng · hour/mL, similar to that reported using a vial/syringe or prefilled syringe. In trial 2, few patients showed handling difficulties with either device. Generally, patients were observed to be more satisfied and confident, followed instructions better, and successfully initiated injection with the autoinjector versus the prefilled syringe. Patients reported the autoinjector to be more convenient and easier to use. No pain or discomfort was experienced using the autoinjector. The autoinjector safety profile

Analytical model for the photocurrent-voltage characteristics of bilayer MEH-PPV/TiO2 photovoltaic devices

Directory of Open Access Journals (Sweden)

Chen Chong

2011-01-01

Full Text Available Abstract The photocurrent in bilayer polymer photovoltaic cells is dominated by the exciton dissociation efficiency at donor/acceptor interface. An analytical model is developed for the photocurrent-voltage characteristics of the bilayer polymer/TiO2 photovoltaic cells. The model gives an analytical expression for the exciton dissociation efficiency at the interface, and explains the dependence of the photocurrent of the devices on the internal electric field, the polymer and TiO2 layer thicknesses. Bilayer polymer/TiO2 cells consisting of poly[2-methoxy-5-(2-ethylhexyloxy-1,4-phenylenevinylene] (MEH-PPV and TiO2, with different thicknesses of the polymer and TiO2 films, were prepared for experimental purposes. The experimental results for the prepared bilayer MEH-PPV/TiO2 cells under different conditions are satisfactorily fitted to the model. Results show that increasing TiO2 or the polymer layer in thickness will reduce the exciton dissociation efficiency in the device and further the photocurrent. It is found that the photocurrent is determined by the competition between the exciton dissociation and charge recombination at the donor/acceptor interface, and the increase in photocurrent under a higher incident light intensity is due to the increased exciton density rather than the increase in the exciton dissociation efficiency.

Uranium material removing and recovering device

International Nuclear Information System (INIS)

Takita, Shin-ichi.

1997-01-01

A uranium material removing and recovering device for use in removing surplus uranium heavy metal (UO 2 ) generated in a uranium handling facility comprises a uranium material removing device and a uranium material recovering device. The uranium material removing device comprises an adsorbing portion filled with a uranium adsorbent, a control portion for controlling the uranium adsorbent of the uranium adsorbing portion by a controlling agent, a uranium adsorbing device connected thereto and a jetting device for jetting the adsorbing liquid to equipments deposited with uranium. The recovering device comprises a recovering apparatus for recovering uranium materials deposited with the adsorbent liquid removed by the jetting device and a recovering tank for storing the recovered uranium materials. The device of the present invention can remove surplus uranium simply and safely, mitigate body's load upon removing and recovering operations, facilitate the processing for the exchange of the adsorbent and reduces the radioactive wastes. (T.M.)

UHV testing of vacuum components and diagnostic devices, related to installation of Undulators in Indus-2

International Nuclear Information System (INIS)

Ratnakala, K.C.; Tiwari, S.K.; Bhange, N.J.; Yadav, D.P.; Babbar, L.K.; Netram; Sridhar, R.

2015-01-01

Two Insertion Devices, both planar Undulators (U1 and U2), have been successfully installed and commissioned in Indus-2, in Raja Ramanna Centre for Advanced Technology, Indore. The radiation from these Undulators are expected to be 2 to 3 orders of magnitude brighter than the radiation from the Bending Magnets. As required for the installation of these Insertion Devices in Indus-2 ring, two vacuum sections (LS 2 and LS 3) were modified. Apart from the main Undulator chambers (which were procured from the Manufacturer), several other components were developed in UHVT Section and Beam Diagnostic Section, for this purpose. The components include Taper chambers, Beam Position Indicators (both Insertion Device BPI-s and Upgraded BPI-s) and RF shielded bellows.Taper chambers were needed for the smooth transition of cross-section of vacuum envelope, from the normal straight section chamber (with dimensions: 36 mm x 86 mm) to the Undulator chamber (with dimensions: 17 mm x 81 mm). These chambers were required at both entry and exit of Undulator chambers. IDBPI-s and Upgraded BPI-s were needed for the precise monitoring of electron beam position, before the entry into the Undulator and after exiting the Undulator, at various critical positions. Bellows were required to be connected at various positions, during the assembly of vacuum chambers, for the mechanical flexibility. RF shielding was mandatory inside these bellows, to provide a smooth contour of the vacuum envelope, inside these bellows. All these components were tested in the UHV Lab, and confirmed for their UHV compatibility, prior to the actual assembly in the ring. Afterwards, these components were successfully installed in Indus-2 ring, by December, 2014. This paper narrates the UHV-tests carried out, including the assembly, leak-testing, baking, pumping etc. and the results. (author)

Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors

International Nuclear Information System (INIS)

Laha, P.; Banerjee, I.; Barhai, P.K.; Das, A.K.; Bhoraskar, V.N.; Mahapatra, S.K.

2012-01-01

Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /TiO 2 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole–Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al 2 O 3 /TiO 2 /n-Si metal–oxide–semiconductor capacitors have been studied. Twelve Al/Al 2 O 3 /TiO 2 /n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at ∼1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance–voltage, conductance–voltage and leakage current–voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole–Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

[Implementation of safety devices: biological accident prevention].

Science.gov (United States)

Catalán Gómez, M Teresa; Sol Vidiella, Josep; Castellà Castellà, Manel; Castells Bo, Carolina; Losada Pla, Nuria; Espuny, Javier Lluís

2010-04-01

Accidental exposures to blood and biological material were the most frequent and potentially serious accidents in healthcare workers, reported in the Prevention of Occupational Risks Unit within 2002. Evaluate the biological percutaneous accidents decrease after a progressive introduction of safety devices. Biological accidents produced between 2.002 and 2.006 were analyzed and reported by the injured healthcare workers to the Level 2b Hospital Prevention of Occupational Risk Unit with 238 beds and 750 employees. The key of the study was the safety devices (peripheral i.v. catheter, needleless i.v. access device and capillary blood collection lancet). Within 2002, 54 percutaneous biological accidents were registered and 19 in 2006, that represents a 64.8% decreased. There has been no safety devices accident reported involving these material. Accidents registered during the implantation period occurred because safety devices were not used at that time. Safety devices have proven to be effective in reducing needle stick percutaneous accidents, so that they are a good choice in the primary prevention of biological accidents contact.

Combined optical/digital security devices

Science.gov (United States)

Girnyk, Vladimir I.; Tverdokhleb, Igor V.; Ivanovsky, Andrey A.

2000-04-01

Modern holographic security devices used as emblems against counterfeiting are being more difficult as they should oppress criminal world. 2D, 3D, 3D rainbow holograms or simple diffraction structures protecting documents can not be acceptable against illegal copying of important documents, banknotes or valuable products. Recent developments in technology of Optical variable devices permit world leaders to create more advanced security elements: Kinegrams, Exelgrams, Pixelgrams, Kineforms. These products are used for protecting the most confidential documents and banknotes, but now even their security level can not be enough and besides their automatic identification is vulnerable to factors of instability. We elaborate new visual security devices based on the usage of expensive and advanced technology of combined optical/digital security devices. The technology unites digital and analogue methods of synthesis and recording of visual security devices. The analogue methods include techniques of optical holography - different combinations of 2D/3D, 3D, 2D/3D + 3D structures. Basing on them the design with elements of 3D graphics including security elements and hidden machine- readable images are implemented. The digital methods provide synthesis of optical variable devices including special security elements, computer generated holograms and Kineforms. Using them we create determined and quasi-random machine-readable images. Recordings are carried out using the combined optical and electronic submicrometer technology elaborated by Optronics, Ltd. The results obtained show effectiveness of the combined technology permitting to increase the security level essentially that should increase tamper and counterfeit resistance during many years.

Secure-Network-Coding-Based File Sharing via Device-to-Device Communication

Directory of Open Access Journals (Sweden)

Lei Wang

2017-01-01

Full Text Available In order to increase the efficiency and security of file sharing in the next-generation networks, this paper proposes a large scale file sharing scheme based on secure network coding via device-to-device (D2D communication. In our scheme, when a user needs to share data with others in the same area, the source node and all the intermediate nodes need to perform secure network coding operation before forwarding the received data. This process continues until all the mobile devices in the networks successfully recover the original file. The experimental results show that secure network coding is very feasible and suitable for such file sharing. Moreover, the sharing efficiency and security outperform traditional replication-based sharing scheme.

Channel Access and Power Control for Mobile Crowdsourcing in Device-to-Device Underlaid Cellular Networks

Directory of Open Access Journals (Sweden)

Yue Ma

2018-01-01

Full Text Available With the access of a myriad of smart handheld devices in cellular networks, mobile crowdsourcing becomes increasingly popular, which can leverage omnipresent mobile devices to promote the complicated crowdsourcing tasks. Device-to-device (D2D communication is highly desired in mobile crowdsourcing when cellular communications are costly. The D2D cellular network is more preferable for mobile crowdsourcing than conventional cellular network. Therefore, this paper addresses the channel access and power control problem in the D2D underlaid cellular networks. We propose a novel semidistributed network-assisted power and a channel access control scheme for D2D user equipment (DUE pieces. It can control the interference from DUE pieces to the cellular user accurately and has low information feedback overhead. For the proposed scheme, the stochastic geometry tool is employed and analytic expressions are derived for the coverage probabilities of both the cellular link and D2D links. We analyze the impact of key system parameters on the proposed scheme. The Pareto optimal access threshold maximizing the total area spectral efficiency is obtained. Unlike the existing works, the performances of the cellular link and D2D links are both considered. Simulation results show that the proposed method can improve the total area spectral efficiency significantly compared to existing schemes.

Pb(Zn1/3Nb2/3O3–PbTiO3 single crystal and device development

Directory of Open Access Journals (Sweden)

L. C. Lim

2014-01-01

Full Text Available This paper describes recent device developments with relaxor ferroelectric Pb(Zn1/3Nb2/3O3–PbTiO3 (PZN–PT single crystals carried out at Microfine Materials Technologies Pte. Ltd, Singapore. Promising [011]-poled transverse cuts of PZN–PT single crystals and the results on the effect of electric field and axial compressive stress on the rhombohedral-to-orthorhombic (R–O phase transformation behavior of such cuts are presented and discussed. The single crystal devices described include a compact low-frequency broadband power-efficient underwater tonpilz projector, high sensitivity shear accelerometers and acoustic vector sensors (AVS. The unique characteristics offered by these PZN–PT single crystal devices are highlighted, which serve as examples of new-generation piezoelectric devices and systems for a wide range of demanding applications.

Hybrid Optical Devices: The Case of the Unification of the Electrochromic Device and the Organic Solar Cell

Directory of Open Access Journals (Sweden)

Andre F. S. Guedes

2016-06-01

Full Text Available The development of Hybrid Optical Devices, using some flexible optically transparent substrate material and organic semiconductor materials, has been widely utilized by the organic electronic industry, when manufacturing new technological products. The Hybrid Optical Device is constituted by the union of the electrochromic device and the organic solar cell. The flexible organic photovoltaic solar cells, in this hybrid optical device, have been the Poly base (3-hexyl thiophene, P3HT, Phenyl-C61-butyric acid methyl ester, PCBM and Polyaniline, PANI, all being deposited in Indium Tin Oxide, ITO. In addition, the thin film, obtained by the deposition of PANI, and prepared in perchloric acid solution, has been identified through PANI-X1. In the flexible electrochromic device, the Poly base (3,4-ethylenedioxythiophene, PEDOT, has been prepared in Propylene Carbonate, PC, being deposited in Indium Tin Oxide, ITO. Also, both devices have been united by an electrolyte solution prepared with Vanadium Pentoxide, V2O5, Lithium Perchlorate, LiClO4, and Polymethylmethacrylate, PMMA. This device has been characterized through Electrical Measurements, such as UV-Vis Spectroscopy and Scanning Electron Microscopy (SEM. Thus, the result obtained through electrical measurements has demonstrated that the flexible organic photovoltaic solar cell presented the characteristic curve of standard solar cell after spin-coating and electrodeposition. Accordingly, the results obtained with optical and electrical characterization have revealed that the electrochromic device demonstrated some change in optical absorption, when subjected to some voltage difference. Moreover, the inclusion of the V2O5/PANI-X1 layer reduced the effects of degradation that this hybrid organic device caused, that is, solar irradiation. Studies on Scanning Electron Microscopy (SEM have found out that the surface of V2O5/PANI-X1 layers can be strongly conditioned by the surface morphology of the

Variable range hopping in TiO2 insulating layers for oxide electronic devices

Directory of Open Access Journals (Sweden)

Y. L. Zhao

2012-03-01

Full Text Available TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature. Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES mechanism. Magnetoresistance (MR of the sample with lowest resistivity was positive at low temperature (for VRH but negative above 10 K indicating quantum interference effects.

Physics and applications of electrochromic devices

Science.gov (United States)

Pawlicka, Agnieszka; Avellaneda, Cesar O.

2003-07-01

Solid state electrochromic devices (ECD) are of considerable technological and commercial interest because of their controllable transmission, absorption and/or reflectance. For instance, a major application of these devices is in smart windows that can regulate the solar gains of buildings and also in glare attenuation in automobile rear view mirrors. Other applications include solar cells, small and large area flat panel displays, satellite temperature control, food monitoring, and document authentication. A typical electrochromic device has a five-layer structure: GS/TC/EC/IC/IS/TC/GS, where GS is a glass substrate, TC is a transparent conductor, generally ITO (indium tin oxide) or FTO (fluorine tin oxide), EC is an electrochromic coating, IC is an ion conductor (solid or liquid electrolyte) and IS is an ion storage coating. Generally, the EC and IS layers are deposited separately on the TC coatings and then jointed with the IC and sealed. The EC and IS are thin films that can be deposited by sputtering, CVD, sol-gel precursors, etc. There are different kinds of organic, inorganic and organic-inorganic films that can be used to make electrochromic devices. Thin electrochromic films can be: WO3, Nb2O5, Nb2O5:Li+ or Nb2O5-TiO2 coatings, ions storage films: CeO2-TiO2, CeO2-ZrO2 or CeO2-TiO2-ZrO2 and electrolytes like Organically Modified Electrolytes (Ormolytes) or polymeric films also based on natural polymers like starch or cellulose. These last are very interesting due to their high ionic conductivity, high transparency and good mechanical properties. This paper describes construction and properties of different thin oxide and polymeric films and also shows the optical response of an all sol-gel electrochromic device with WO3/Ormolyte/CeO2-TiO2 configuration.

Discrete Event Simulation Model of the Polaris 2.1 Gamma Ray Imaging Radiation Detection Device

Science.gov (United States)

2016-06-01

release; distribution is unlimited DISCRETE EVENT SIMULATION MODEL OF THE POLARIS 2.1 GAMMA RAY IMAGING RADIATION DETECTION DEVICE by Andres T...ONLY (Leave blank) 2. REPORT DATE June 2016 3. REPORT TYPE AND DATES COVERED Master’s thesis 4. TITLE AND SUBTITLE DISCRETE EVENT SIMULATION MODEL...modeled. The platform, Simkit, was utilized to create a discrete event simulation (DES) model of the Polaris. After carefully constructing the DES

Instantly decodable network coding for real-time device-to-device communications

KAUST Repository

Douik, Ahmed

2016-01-04

This paper studies the delay reduction problem for instantly decodable network coding (IDNC)-based device-to-device (D2D) communication-enabled networks. Unlike conventional point-to-multipoint (PMP) systems in which the wireless base station has the sufficient computation abilities, D2D networks rely on battery-powered operations of the devices. Therefore, a particular emphasis on the computation complexity needs to be addressed in the design of delay reduction algorithms for D2D networks. While most of the existing literature on IDNC directly extend the delay reduction PMP schemes, known to be NP-hard, to the D2D setting, this paper proposes to investigate and minimize the complexity of such algorithms for battery-powered devices. With delay minimization problems in IDNC-based systems being equivalent to a maximum weight clique problems in the IDNC graph, the presented algorithms, in this paper, can be applied to different delay aspects. This paper introduces and focuses on the reduction of the maximum value of the decoding delay as it represents the most general solution. The complexity of the solution is reduced by first proposing efficient methods for the construction, the update, and the dimension reduction of the IDNC graph. The paper, further, shows that, under particular scenarios, the problem boils down to a maximum clique problem. Due to the complexity of discovering such maximum clique, the paper presents a fast selection algorithm. Simulation results illustrate the performance of the proposed schemes and suggest that the proposed fast selection algorithm provides appreciable complexity gain as compared to the optimal selection one, with a negligible degradation in performance. In addition, they indicate that the running time of the proposed solution is close to the random selection algorithm.

CIRSE Vascular Closure Device Registry

International Nuclear Information System (INIS)

Reekers, Jim A.; Müller-Hülsbeck, Stefan; Libicher, Martin; Atar, Eli; Trentmann, Jens; Goffette, Pierre; Borggrefe, Jan; Zeleňák, Kamil; Hooijboer, Pieter; Belli, Anna-Maria

2011-01-01

Purpose: Vascular closure devices are routinely used after many vascular interventional radiology procedures. However, there have been no major multicenter studies to assess the safety and effectiveness of the routine use of closure devices in interventional radiology. Methods: The CIRSE registry of closure devices with an anchor and a plug started in January 2009 and ended in August 2009. A total of 1,107 patients were included in the registry. Results: Deployment success was 97.2%. Deployment failure specified to access type was 8.8% [95% confidence interval (95% CI) 5.0–14.5] for antegrade access and 1.8% (95% CI 1.1–2.9) for retrograde access (P = 0.001). There was no difference in deployment failure related to local PVD at the access site. Calcification was a reason for deployment failure in only 5.9 cm, and two vessel occlusions. Conclusion: The conclusion of this registry of closure devices with an anchor and a plug is that the use of this device in interventional radiology procedures is safe, with a low incidence of serious access site complications. There seems to be no difference in complications between antegrade and retrograde access and other parameters.

Integrated titanium dioxide (TiO_2) nanoparticles on interdigitated device electrodes (IDEs) for pH analysis

International Nuclear Information System (INIS)

Azizah, N.; Gopinath, Subash C. B.; Nadzirah, Sh.; Farehanim, M. A.; Fatin, M. F.; Ruslinda, A. R.; Hashim, U.; Arshad, M. K. Md.; Ayub, R. M.

2016-01-01

Titanium dioxide (TiO_2) nanoparticles based Interdigitated Device Electrodes (IDEs) Nanobiosensor device was developed for intracellular biochemical detection. Fabrication and characterization of pH sensors using IDE nanocoated with TiO_2 was studied in this paper. In this paper, a preliminary assessment of this intracellular sensor with electrical measurement under different pH levels. 3-aminopropyltriethoxysilane (APTES) was used to enhance the sensitivity of titanium dioxide layer as well as able to provide surface modification by undergoing protonation and deprotonation process. Different types of pH solution provide different resistivity and conductivity towards the surface. Base solution has the higher current compared to an acid solution. Amine and oxide functionalized TiO_2 based IDE exhibit pH-dependent could be understood in terms of the change in surface charge during protonation and deprotonation. The simple fabrication process, high sensitivity, and fast response of the TiO_2 based IDEs facilitate their applications in a wide range of areas. The small size of semiconductor TiO_2 based IDE for sensitive, label-free, real time detection of a wide range of biological species could be explored in vivo diagnostics and array-based screening.

Neutron measuring device

International Nuclear Information System (INIS)

Hatayama, Akiyoshi; Seki, Eiji; Kita, Yoshio; Nishitani, Takeo.

1993-01-01

The device of the present invention concerns measurement for neutrons in a tokamak type thermonuclear device and it can measure total amount of generated neutrons accurately throughout the operation period even if an error is caused in counted values by plasma disruption. That is, the device comprises (1) a means for detecting presence or absence of occurrence of plasma disruption and the time for the initiation of the occurrence, (2) a first data processing means for processing detection signals, (3) a means for detecting neutrons generated in plasmas and (4) a second data processing means for calculating integrated values for the number of neutrons generated from the start to the completion of electric discharge when no disruption occurs and calculating integrated values for the number of generated neutrons from the start of electric discharge to the time at the initiation of occurrence of the disruption when disruption is present. In the thus constituted device, even if an error is caused by frequent occurrence of plasma disruption, total time integrated amount of neutrons generated in the plasmas can be measured accurately. (I.S.)

Ontology-Based Device Descriptions and Device Repository for Building Automation Devices

Directory of Open Access Journals (Sweden)

Dibowski Henrik

2011-01-01

Full Text Available Device descriptions play an important role in the design and commissioning of modern building automation systems and help reducing the design time and costs. However, all established device descriptions are specialized for certain purposes and suffer from several weaknesses. This hinders a further design automation, which is strongly needed for the more and more complex building automation systems. To overcome these problems, this paper presents novel Ontology-based Device Descriptions (ODDs along with a layered ontology architecture, a specific ontology view approach with virtual properties, a generic access interface, a triple store-based database backend, and a generic search mask GUI with underlying query generation algorithm. It enables a formal, unified, and extensible specification of building automation devices, ensures their comparability, and facilitates a computer-enabled retrieval, selection, and interoperability evaluation, which is essential for an automated design. The scalability of the approach to several ten thousand devices is demonstrated.

Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO2 gate dielectrics

International Nuclear Information System (INIS)

Lo, G.Q.; Shih, D.K.; Ting, W.; Kwong, D.L.

1989-01-01

In this letter, the radiation-induced interface state generation ΔD it in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO 2 . The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface ''hardness'' of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides. (author)

Band alignment in organic devices: Photoemission studies of model oligomers on In2O3

International Nuclear Information System (INIS)

Blyth, R. I. R.; Duschek, R.; Koller, G.; Netzer, F. P.; Ramsey, M. G.

2001-01-01

The interfaces of In 2 O 3 , a model for indium - tin - oxide (ITO), with benzene, thiophene, and benzaldehyde, models for technologically important organic molecules, are studied using angle resolved ultraviolet photoemission and work function measurements. Band alignment diagrams for hypothetical Al/organic/ITO devices have been drawn, using values determined from this work and previously published studies of these molecules on Al(111). The similarity between the bonding of benzene and thiophene on Al(111) and In 2 O 3 , i.e., largely electrostatic, leads to near identical alignment at both metal and oxide interfaces. This indicates that clean Al and ITO will make a very poor electron/hole injecting pair. We suggest that the apparent efficiency of Al as an electron injecting contact in real devices is due to the presence of oxygen at the Al/organic interface. For benzaldehyde the interaction with In 2 O 3 is largely electrostatic, in contrast to the covalent bonds formed on Al(111). This leads to very different alignment at the Al and oxide interfaces, showing the importance of the particular organic - inorganic interaction in determining band alignment. [copyright] 2001 American Institute of Physics

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni) molecular devices based on zigzag graphene nanoribbon electrodes

Science.gov (United States)

Li, Dongde; Wu, Di; Zhang, Xiaojiao; Zeng, Bowen; Li, Mingjun; Duan, Haiming; Yang, Bingchu; Long, Mengqiu

2018-05-01

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)2 molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)2 molecular devices.

Graphene device and method of using graphene device

Science.gov (United States)

Bouchiat, Vincent; Girit, Caglar; Kessler, Brian; Zettl, Alexander K.

2015-08-11

An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

Detection device

Science.gov (United States)

Smith, J.E.

1981-02-27

The present invention is directed to a detection device comprising: (1) an entrance chamber; (2) a central chamber; and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

Humanitarian Use Devices/Humanitarian Device Exemptions in cardiovascular medicine.

Science.gov (United States)

Kaplan, Aaron V; Harvey, Elisa D; Kuntz, Richard E; Shiran, Hadas; Robb, John F; Fitzgerald, Peter

2005-11-01

The Second Dartmouth Device Development Symposium held in October 2004 brought together leaders from the medical device community, including clinical investigators, senior representatives from the US Food and Drug Administration, large and small device manufacturers, and representatives from the financial community to examine difficult issues confronting device development. The role of the Humanitarian Use Device/Humanitarian Device Exemption (HUD/HDE) pathway in the development of new cardiovascular devices was discussed in this forum. The HUD/HDE pathway was created by Congress to facilitate the availability of medical devices for "orphan" indications, ie, those affecting HDEs have been granted (23 devices, 6 diagnostic tests). As the costs to gain regulatory approval for commonly used devices increase, companies often seek alternative ways to gain market access, including the HUD/HDE pathway. For a given device, there may be multiple legitimate and distinct indications, including indications that meet the HUD criteria. Companies must choose how and when to pursue each of these indications. The consensus of symposium participants was for the HUD/HDE pathway to be reserved for true orphan indications and not be viewed strategically as part of the clinical development plan to access a large market.

Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices

International Nuclear Information System (INIS)

Thermadam, S. Puthen; Bhagat, S.K.; Alford, T.L.; Sakaguchi, Y.; Kozicki, M.N.; Mitkova, M.

2010-01-01

This paper presents a study of Cu diffusion at various temperatures in thin SiO 2 films and the influence of diffusion conditions on the switching of Programmable Metallization Cell (PMC) devices formed from such Cu-doped films. Film composition and diffusion products were analyzed using secondary ion mass spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction and Raman spectroscopy methods. We found a strong dependence of the diffused Cu concentration, which varied between 0.8 at.% and 10 -3 at.%, on the annealing temperature. X-ray diffraction and Raman studies revealed that Cu does not react with the SiO 2 network and remains in elemental form after diffusion for the annealing conditions used. PMC resistive memory cells were fabricated with such Cu-diffused SiO 2 films and device performance, including the stability of the switching voltage, is discussed in the context of the material characteristics.

A simple encapsulation method for organic optoelectronic devices

International Nuclear Information System (INIS)

Sun Qian-Qian; An Qiao-Shi; Zhang Fu-Jun

2014-01-01

The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells (PSCs). The power conversion efficiencies (PCE) of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices. (atomic and molecular physics)

Neutron detection with integrated sub-2 nm Pt nanoparticles and 10B enriched dielectrics—A direct conversion device

Directory of Open Access Journals (Sweden)

Haisheng Zheng

2016-07-01

Full Text Available We report a direct conversion solid-state neutron detection device fabricated by combining the large neutron capture cross-section of 10B with the charge trapping attributes of sub-2 nm Pt nanoparticles (Pt NPs in MOSCAP structures. The 10B embedded polystyrene based neutron conversion layer also serves as the dielectric layer. Neutron sensing is achieved through carrier generation within the active 10B based dielectric layer and subsequent transfer to the embedded Pt NP layers, resulting in a significant change of the device's flat-band voltage upon ex-situ characterization. Both single and dual Pt NP layer embedded architectures, with varying electron addition energies, were tested within this study. While dual-layer Pt NPs embedded direct conversion devices with higher electron addition energy are shown to successfully capture charges generated through energetic reaction product upon neutron capture, the single Pt NP layer embedded device structure with lower electron addition energy displays signs of charge loss attributable to direct tunneling in the ex-situ capacitance–voltage measurement. Although only ex-situ detector operation is demonstrated within the realms of this study, sensitive in-situ neutron detectors and ultra-stable ex-situ dosimeters may be achievable utilizing a similar structure by fine-tuning the Pt NP size and the number of Pt NP layers in the device. Keywords: Neutron detection, Sub-2 nm Pt nanoparticles, 10B enriched dielectrics, Direct conversion, MOSCAP, Coulomb blockade

Semi-empirical device model for Cu2ZnSn(S,Se)4 solar cells

Science.gov (United States)

Gokmen, Tayfun; Gunawan, Oki; Mitzi, David B.

2014-07-01

We present a device model for the hydrazine processed kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell with a world record efficiency of ˜12.6%. Detailed comparison of the simulation results, performed using wxAMPS software, to the measured device parameters shows that our model captures the vast majority of experimental observations, including VOC, JSC, FF, and efficiency under normal operating conditions, and temperature vs. VOC, sun intensity vs. VOC, and quantum efficiency. Moreover, our model is consistent with material properties derived from various techniques. Interestingly, this model does not have any interface defects/states, suggesting that all the experimentally observed features can be accounted for by the bulk properties of CZTSSe. An electrical (mobility) gap that is smaller than the optical gap is critical to fit the VOC data. These findings point to the importance of tail states in CZTSSe solar cells.

Nanoscale memory devices

International Nuclear Information System (INIS)

Chung, Andy; Deen, Jamal; Lee, Jeong-Soo; Meyyappan, M

2010-01-01

This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO 2 . (topical review)

Electrical Contacts in Monolayer Arsenene Devices.

Science.gov (United States)

Wang, Yangyang; Ye, Meng; Weng, Mouyi; Li, Jingzhen; Zhang, Xiuying; Zhang, Han; Guo, Ying; Pan, Yuanyuan; Xiao, Lin; Liu, Junku; Pan, Feng; Lu, Jing

2017-08-30

Arsenene, arsenic analogue of graphene, as an emerging member of two-dimensional semiconductors (2DSCs), is quite promising in next-generation electronic and optoelectronic applications. The metal electrical contacts play a vital role in the charge transport and photoresponse processes of nanoscale 2DSC devices and even can mask the intrinsic properties of 2DSCs. Here, we present a first comprehensive study of the electrical contact properties of monolayer (ML) arsenene with different electrodes by using ab initio electronic calculations and quantum transport simulations. Schottky barrier is always formed with bulk metal contacts owing to the Fermi level pinning (pinning factor S = 0.33), with electron Schottky barrier height (SBH) of 0.12, 0.21, 0.25, 0.35, and 0.50 eV for Sc, Ti, Ag, Cu, and Au contacts and hole SBH of 0.75 and 0.78 eV for Pd and Pt contacts, respectively. However, by contact with 2D graphene, the Fermi level pinning effect can be reduced due to the suppression of metal-induced gap states. Remarkably, a barrier free hole injection is realized in ML arsenene device with graphene-Pt hybrid electrode, suggestive of a high device performance in such a ML arsenene device. Our study provides a theoretical foundation for the selection of favorable electrodes in future ML arsenene devices.

The Effectiveness of the High-Tech Speech-Generating Device with Proloquo2Go App in Reducing Echolalia Utterances in a Student with Autism

Science.gov (United States)

Alrusayni, Norah

2017-01-01

This study was conducted to determine the effectiveness of using the high-tech speech-generating device with Proloquo2Go app to reduce echolalic utterances in a student with autism during conversational speech. After observing that the iPad device with several apps was used by the students and that it served as a communication device, language…

Energy-Efficient Resource and Power Allocation for Underlay Multicast Device-to-Device Transmission

Directory of Open Access Journals (Sweden)

Fan Jiang

2017-11-01

Full Text Available In this paper, we present an energy-efficient resource allocation and power control scheme for D2D (Device-to-Device multicasting transmission. The objective is to maximize the overall energy-efficiency of D2D multicast clusters through effective resource allocation and power control schemes, while considering the quality of service (QoS requirements of both cellular users (CUs and D2D clusters. We first build the optimization model and a heuristic resource and power allocation algorithm is then proposed to solve the energy-efficiency problem with less computational complexity. Numerical results indicate that the proposed algorithm outperforms existing schemes in terms of throughput per energy consumption.

Nanostructured transparent conducting oxide electrochromic device

Science.gov (United States)

Milliron, Delia; Tangirala, Ravisubhash; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

2016-05-17

The embodiments described herein provide an electrochromic device. In an exemplary embodiment, the electrochromic device includes (1) a substrate and (2) a film supported by the substrate, where the film includes transparent conducting oxide (TCO) nanostructures. In a further embodiment, the electrochromic device further includes (a) an electrolyte, where the nanostructures are embedded in the electrolyte, resulting in an electrolyte, nanostructure mixture positioned above the substrate and (b) a counter electrode positioned above the mixture. In a further embodiment, the electrochromic device further includes a conductive coating deposited on the substrate between the substrate and the mixture. In a further embodiment, the electrochromic device further includes a second substrate positioned above the mixture.

Neutronic analysis of fusion tokamak devices by PHITS

International Nuclear Information System (INIS)

Sukegawa, Atsuhiko M.; Takiyoshi, Kouji; Amano, Toshio; Kawasaki, Hiromitsu; Okuno, Koichi

2011-01-01

A complete 3D neutronic analysis by PHITS (Particle and Heavy Ion Transport code System) has been performed for fusion tokamak devices such as JT-60U device and JT-60 Superconducting tokamak device (JT-60 Super Advanced). The mono-energetic neutrons (E n =2.45 MeV) of the DD fusion devices are used for the neutron source in the analysis. The visual neutron flux distribution for the estimation of the port streaming and the dose rate around the fusion tokamak devices has been calculated by the PHITS. The PHITS analysis makes it clear that the effect of the port streaming of superconducting fusion tokamak device with the cryostat is crucial and the calculated neutron spectrum results by PHITS agree with the MCNP-4C2 results. (author)

CIRSE Vascular Closure Device Registry

Science.gov (United States)

Müller-Hülsbeck, Stefan; Libicher, Martin; Atar, Eli; Trentmann, Jens; Goffette, Pierre; Borggrefe, Jan; Zeleňák, Kamil; Hooijboer, Pieter; Belli, Anna-Maria

2010-01-01

Purpose Vascular closure devices are routinely used after many vascular interventional radiology procedures. However, there have been no major multicenter studies to assess the safety and effectiveness of the routine use of closure devices in interventional radiology. Methods The CIRSE registry of closure devices with an anchor and a plug started in January 2009 and ended in August 2009. A total of 1,107 patients were included in the registry. Results Deployment success was 97.2%. Deployment failure specified to access type was 8.8% [95% confidence interval (95% CI) 5.0–14.5] for antegrade access and 1.8% (95% CI 1.1–2.9) for retrograde access (P = 0.001). There was no difference in deployment failure related to local PVD at the access site. Calcification was a reason for deployment failure in only 5.9 cm, and two vessel occlusions. Conclusion The conclusion of this registry of closure devices with an anchor and a plug is that the use of this device in interventional radiology procedures is safe, with a low incidence of serious access site complications. There seems to be no difference in complications between antegrade and retrograde access and other parameters. PMID:20981425

75 FR 59611 - Microbiology Devices; Reclassification of Herpes Simplex Virus Types 1 and 2 Serological Assays...

Science.gov (United States)

2010-09-28

... DEPARTMENT OF HEALTH AND HUMAN SERVICES Food and Drug Administration 21 CFR Part 866 [Docket No. FDA-2009-N-0344] Microbiology Devices; Reclassification of Herpes Simplex Virus Types 1 and 2 Serological Assays; Confirmation of Effective Date AGENCY: Food and Drug Administration, HHS. ACTION: Direct...

40 CFR 1065.275 - N2O measurement devices.

Science.gov (United States)

2010-07-01

... measurement devices. (a) General component requirements. We recommend that you use an analyzer that meets the... functions of other gaseous measurements and the engine's known or assumed fuel properties. The target value... gaseous measurements. The target value for any compensation algorithm is 0.0% (that is, no bias high and...

Chemically sensitive interfaces on SAW devices

Energy Technology Data Exchange (ETDEWEB)

Ricco, A.J.; Martin, S.J. [Sandia National Labs., Albuquerque, NM (United States); Crooks, R.M.; Xu, Chuanjing [Texas A and M Univ., College Station, TX (United States); Allred, R.E. [Adherent Technologies, Inc., Albuquerque, NM (United States)

1993-11-01

Using surface acoustic wave (SAW) devices, three approaches to the effective use of chemically sensitive interfaces that are not highly chemically selective have been examined: (1) molecular identification from time-resolved permeation transients; (2) using multifrequency SAW devices to determine the frequency dependence of analyte/film interactions; (3) use of an array of SAW devices bearing diverse chemically sensitive interfaces to produce a distinct response pattern for each analyte. In addition to their well-known sensitivity to mass changes (0.0035 monolayer of N{sub 2} can be measured), SAW devices respond to the mechanical and electronic properties of thin films, enhancing response information content but making a thorough understanding of the perturbation critical. Simultaneous measurement of changes in frequency and attenuation, which can provide the information necessary to determine the type of perturbation, are used as part of the above discrimination schemes.

Chemical-to-Electricity Carbon: Water Device.

Science.gov (United States)

He, Sisi; Zhang, Yueyu; Qiu, Longbin; Zhang, Longsheng; Xie, Yun; Pan, Jian; Chen, Peining; Wang, Bingjie; Xu, Xiaojie; Hu, Yajie; Dinh, Cao Thang; De Luna, Phil; Banis, Mohammad Norouzi; Wang, Zhiqiang; Sham, Tsun-Kong; Gong, Xingao; Zhang, Bo; Peng, Huisheng; Sargent, Edward H

2018-03-26

The ability to release, as electrical energy, potential energy stored at the water:carbon interface is attractive, since water is abundant and available. However, many previous reports of such energy converters rely on either flowing water or specially designed ionic aqueous solutions. These requirements restrict practical application, particularly in environments with quiescent water. Here, a carbon-based chemical-to-electricity device that transfers the chemical energy to electrical form when coming into contact with quiescent deionized water is reported. The device is built using carbon nanotube yarns, oxygen content of which is modulated using oxygen plasma-treatment. When immersed in water, the device discharges electricity with a power density that exceeds 700 mW m -2 , one order of magnitude higher than the best previously published result. X-ray absorption and density functional theory studies support a mechanism of operation that relies on the polarization of sp 2 hybridized carbon atoms. The devices are incorporated into a flexible fabric for powering personal electronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices.

Science.gov (United States)

Singh, S L; Singh, S B; Ghatak, K P

2018-04-01

In this paper an attempt is made to study the 2D Fermi Level Mass (FLM) in accumulation and inversion layers of nano MOSFET devices made of nonlinear optical, III-V, ternary, Quaternary, II-VI, IV-VI, Ge and stressed materials by formulating 2D carrier dispersion laws on the basis of k → ⋅ p → ⋅ formalism and considering the energy band constants of a particular material. It is observed taking accumulation and inversion layers of Cd3As2, CdGeAs2, InSb, Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP, CdS, GaSb and Ge as examples that the FLM depends on sub band index for nano MOSFET devices made of Cd3As2 and CdGeAs2 materials which is the characteristic features such 2D systems. Besides, the FLM depends on the scattering potential in all the cases and the same mass changes with increasing surface electric field. The FLM exists in the band gap which is impossible without heavy doping.

Characterization of Damp-Heat Degradation of CuInGaSe2 Solar Cell Components and Devices by (Electrochemical) Impedance Spectroscopy: Preprint

Energy Technology Data Exchange (ETDEWEB)

Pern, F. J. J.; Noufi, R.

2011-09-01

This work evaluated the capability of (electrochemical) impedance spectroscopy (IS, or ECIS as used here) to monitor damp heat (DH) stability of contact materials, CuInGaSe2 (CIGS) solar cell components, and devices. Cell characteristics and its variation of the CIGS devices were also examined by the ECIS.

14 CFR 91.21 - Portable electronic devices.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic device...

78 FR 15878 - Taxable Medical Devices; Correction

Science.gov (United States)

2013-03-13

...--MANUFATURERS AND RETAILERS EXCISE TAXES 0 Paragraph 1. The authority citation for part 48 continues to read in... device. * * * * * (b) * * * (2) * * * A device will be considered to be of a type that is generally..., the mobile x-ray systems are not devices that are of a type that are generally purchased by the...

Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

Directory of Open Access Journals (Sweden)

Xingpeng Liu

2017-12-01

Full Text Available In order to develop film electrodes for the surface acoustic wave (SAW devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.

Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device

Science.gov (United States)

Amorim, Cleber A.; Bernardo, Eric P.; Leite, Edson R.; Chiquito, Adenilson J.

2018-05-01

The current–voltage (I–V) characteristics of metal–semiconductor junction (Au–Ni/SnO2/Au–Ni) Schottky barrier in SnO2 nanowires were investigated over a wide temperature range. By using the Schottky–Mott model, the zero bias barrier height Φ B was estimated from I–V characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (n) was found to decrease with increasing temperature. The variation in the Schottky barrier and n was attributed to the spatial inhomogeneity of the Schottky barrier height. The experimental I–V characteristics exhibited a Gaussian distribution having mean barrier heights {\\overline{{{Φ }}}}B of 0.30 eV and standard deviation σ s of 60 meV. Additionally, the Richardson modified constant was obtained to be 70 A cm‑2 K‑2, leading to an effective mass of 0.58m 0. Consequently, the temperature dependence of I–V characteristics of the SnO2 nanowire devices can be successfully explained on the Schottky–Mott theory framework taking into account a Gaussian distribution of barrier heights.

DeviceNet-based device-level control in SSRF

CERN Document Server

Leng Yong Bin; Lu Cheng Meng; Miao Hai Feng; Liu Song Qiang; Shen Guo Bao

2002-01-01

The control system of Shanghai Synchrotron Radiation Facility is an EPICS-based distributed system. One of the key techniques to construct the system is the device-level control. The author describes the design and implementation of the DeviceNet-based device controller. A prototype of the device controller was tested in the experiments of magnet power supply and the result showed a precision of 3 x 10 sup - sup 5

Atherectomy devices: technology update

Directory of Open Access Journals (Sweden)

Akkus NI

2014-12-01

Full Text Available Nuri I Akkus,1 Abdulrahman Abdulbaki,1 Enrique Jimenez,2 Neeraj Tandon2 1Department of Cardiology, Louisiana State University Health Sciences Center Shreveport, Shreveport, LA, USA; 2Department of Cardiology, Overton Brooks VA Medical Center, Shreveport, LA, USA Abstract: Atherectomy is a procedure which is performed to remove atherosclerotic plaque from diseased arteries. Atherosclerotic plaques are localized in either coronary or peripheral arterial vasculature and may have different characteristics depending on the texture of the plaque. Atherectomy has been used effectively in treatment of both coronary and peripheral arterial disease. Atherectomy devices are designed differently to either cut, shave, sand, or vaporize these plaques and have different indications. In this article, current atherectomy devices are reviewed. Keywords: coronary artery disease, peripheral arterial disease

Semi-empirical device model for Cu2ZnSn(S,Se)4 solar cells

International Nuclear Information System (INIS)

Gokmen, Tayfun; Gunawan, Oki; Mitzi, David B.

2014-01-01

We present a device model for the hydrazine processed kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cell with a world record efficiency of ∼12.6%. Detailed comparison of the simulation results, performed using wxAMPS software, to the measured device parameters shows that our model captures the vast majority of experimental observations, including V OC , J SC , FF, and efficiency under normal operating conditions, and temperature vs. V OC , sun intensity vs. V OC , and quantum efficiency. Moreover, our model is consistent with material properties derived from various techniques. Interestingly, this model does not have any interface defects/states, suggesting that all the experimentally observed features can be accounted for by the bulk properties of CZTSSe. An electrical (mobility) gap that is smaller than the optical gap is critical to fit the V OC data. These findings point to the importance of tail states in CZTSSe solar cells.

Loose part monitoring device

International Nuclear Information System (INIS)

Nomura, Hiroshi.

1992-01-01

The device of the present invention estimates a place where loose parts occur and structural components as the loose parts in a fluid flow channel of a reactor device, to provide information thereof to a plant operator. That is, the device of the present invention comprises (1) a plurality of detectors disposed to each of equipments constituting fluid channels, (2) an abnormal sound sensing device for sensing signals from the detectors, (3) an estimation section for estimating the place where the loose parts occur and the structural components thereof based on the signals sensed by the abnormal sound sensing section, (4) a memory section for storing data of the plant structure necessary for the estimation, and (5) a display section for displaying the result of the estimation. In such a device, the position where the loose parts collide against the plant structural component and the energy thereof are estimated. The dropping path of the loose parts is estimated from the estimation position. Parts to be loose parts in the path are listed up. The parts on the list is selected based on the estimated energy thereby enabling to determine the loose parts. (I.S.)

Reactor container cooling device

Energy Technology Data Exchange (ETDEWEB)

Ando, Koji; Kinoshita, Shoichiro

1995-11-10

The device of the present invention efficiently lowers pressure and temperature in a reactor container upon occurrence of a severe accident in a BWR-type reactor and can cool the inside of the container for a long period of time. That is, (1) pipelines on the side of an exhaustion tower of a filter portion in a filter bent device of the reactor container are in communication with pipelines on the side of a steam inlet of a static container cooling device by way of horizontal pipelines, (2) a back flow check valve is disposed to horizontal pipelines, (3) a steam discharge valve for a pressure vessel is disposed closer to the reactor container than the joint portion between the pipelines on the side of the steam inlet and the horizontal pipelines. Upon occurrence of a severe accident, when the pressure vessel should be ruptured and steams containing aerosol in the reactor core should be filled in the reactor container, the inlet valve of the static container cooling device is closed. Steams are flown into the filter bent device of the reactor container, where the aerosols can be removed. (I.S.).

Zero-Power Radio Device.

Energy Technology Data Exchange (ETDEWEB)

Brocato, Robert W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2018-02-01

This report describes an unpowered radio receiver capable of detecting and responding to weak signals transmit ted from comparatively long distances . This radio receiver offers key advantages over a short range zero - power radio receiver previously described in SAND2004 - 4610, A Zero - Power Radio Receiver . The device described here can be fabricated as an integrated circuit for use in portable wireless devices, as a wake - up circuit, or a s a stand - alone receiver operating in conjunction with identification decoders or other electroni cs. It builds on key sub - components developed at Sandia National Laboratories over many years. It uses surface acoustic wave (SAW) filter technology. It uses custom component design to enable the efficient use of small aperture antennas. This device uses a key component, the pyroelectric demodulator , covered by Sandia owned U.S. Patent 7397301, Pyroelectric Demodulating Detector [1] . This device is also described in Sandia owned U.S. Patent 97266446, Zero Power Receiver [2].

Design of wearable health monitoring device

Science.gov (United States)

Devara, Kresna; Ramadhanty, Savira; Abuzairi, Tomy

2018-02-01

Wearable smart health monitoring devices have attracted considerable attention in both research community and industry. Some of the causes are the increasing healthcare costs, along with the growing technology. To address this demand, in this paper, design and evaluation of wearable health monitoring device integrated with smartphone were presented. This device was designed for patients in need of constant health monitoring. The performance of the proposed design has been tested by conducting measurement once in 2 minutes for 10 minutes to obtain heart rate and body temperature data. The comparation between data measured by the proposed device and that measured by the reference device yields only an average error of 1.45% for heart rate and 1.04% for body temperature.

CPAP Devices for Emergency Prehospital Use: A Bench Study.

Science.gov (United States)

Brusasco, Claudia; Corradi, Francesco; De Ferrari, Alessandra; Ball, Lorenzo; Kacmarek, Robert M; Pelosi, Paolo

2015-12-01

CPAP is frequently used in prehospital and emergency settings. An air-flow output minimum of 60 L/min and a constant positive pressure are 2 important features for a successful CPAP device. Unlike hospital CPAP devices, which require electricity, CPAP devices for ambulance use need only an oxygen source to function. The aim of the study was to evaluate and compare on a bench model the performance of 3 orofacial mask devices (Ventumask, EasyVent, and Boussignac CPAP system) and 2 helmets (Ventukit and EVE Coulisse) used to apply CPAP in the prehospital setting. A static test evaluated air-flow output, positive pressure applied, and FIO2 delivered by each device. A dynamic test assessed airway pressure stability during simulated ventilation. Efficiency of devices was compared based on oxygen flow needed to generate a minimum air flow of 60 L/min at each CPAP setting. The EasyVent and EVE Coulisse devices delivered significantly higher mean air-flow outputs compared with the Ventumask and Ventukit under all CPAP conditions tested. The Boussignac CPAP system never reached an air-flow output of 60 L/min. The EasyVent had significantly lower pressure excursion than the Ventumask at all CPAP levels, and the EVE Coulisse had lower pressure excursion than the Ventukit at 5, 15, and 20 cm H2O, whereas at 10 cm H2O, no significant difference was observed between the 2 devices. Estimated oxygen consumption was lower for the EasyVent and EVE Coulisse compared with the Ventumask and Ventukit. Air-flow output, pressure applied, FIO2 delivered, device oxygen consumption, and ability to maintain air flow at 60 L/min differed significantly among the CPAP devices tested. Only the EasyVent and EVE Coulisse achieved the required minimum level of air-flow output needed to ensure an effective therapy under all CPAP conditions. Copyright © 2015 by Daedalus Enterprises.

State-of-the-art technologies of gallium oxide power devices

Science.gov (United States)

Higashiwaki, Masataka; Kuramata, Akito; Murakami, Hisashi; Kumagai, Yoshinao

2017-08-01

Gallium oxide (Ga2 O3 ) has gained increased attention for power devices due to its superior material properties and the availability of economical device-quality native substrates. This review illustrates recent advances in Ga2 O3 device technologies, beginning with an overview of the social circumstances that motivate the development of new-generation switching devices. Following an introduction to the material properties of Ga2 O3 from the viewpoint of power electronics, growth technologies of Ga2 O3 bulk single crystals and epitaxial thin films are discussed. The fabrication and performance of state-of-the-art Ga2 O3 transistors and diodes are then described. We conclude by identifying the directions and challenges of Ga2 O3 power device development in the near future.

The colour-tuning effect of 2,9-dimethyl-4,7-diphenyl-1, 10-phenanthroline in blue-red organic light-emitting devices

International Nuclear Information System (INIS)

Lin Jian; Xia, Yi-Jie; Tang Chao; Yin Kun; Zhong Gaoyu; Ni Gang; Peng Bo; Hou Xiaoyuan; Gan Fuxi; Huang Wei

2007-01-01

This paper reports the fabrication and measurement of organic light-emitting devices comprised of indium-tin-oxide (ITO)/4,4',4-prime-tris(N-carbazolyl)-triphenylamine (TCTA, 8 nm)/2-pyrenyl-9-phenyl-9-pyrenylfluorene(2P9PPF, 30 nm)/ bathocuproine (BCP, with different thickness)/Alq 3 : DCJTB (DCJTB = 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7- tetramethyljulolidyl-9-enyl)-4H-pyran, Alq 3 = tris(8-hydroxyquinolino) aluminium(III), 2% in mass ratio, 30 nm)/Mg : Ag(250 nm). The dependence of electroluminescence (EL) spectra on the BCP layer thickness and operating voltage has been investigated quantitatively. It is shown that the emission colour of the devices changes from red to blue at 8 V when the BCP layer thickness changes from 1 to 10 nm. The emission colour of the devices also varies with the applying voltage even in a given device. The ratio of blue emission originating from 2P9PPF to the red emission originating from DCJTB increases with the applying voltage. Based on the hole blocking effect of the BCP layer, we deduced the dependence of this ratio on the BCP layer thickness and simulated the experimental result well. It is also proposed that the variation of the EL spectrum with the voltage can be attributed to the varying hole blocking effect under the varying electric field, which resulted in a recombination zone shift, and the exciton dissociation effect in the electric field

The colour-tuning effect of 2,9-dimethyl-4,7-diphenyl-1, 10-phenanthroline in blue-red organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Lin Jian [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Xia, Yi-Jie [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Tang Chao [Institute of Advanced Materials, Nanjing University of Posts and Telecommunications (NUPT), 66 XinMoFan Road, Nanjing 210003 (China); Yin Kun [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Zhong Gaoyu [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Ni Gang [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Peng Bo [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Hou Xiaoyuan [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Gan Fuxi [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Huang Wei [Institute of Advanced Materials, Nanjing University of Posts and Telecommunications (NUPT), 66 XinMoFan Road, Nanjing 210003 (China)

2007-08-07

This paper reports the fabrication and measurement of organic light-emitting devices comprised of indium-tin-oxide (ITO)/4,4',4-prime-tris(N-carbazolyl)-triphenylamine (TCTA, 8 nm)/2-pyrenyl-9-phenyl-9-pyrenylfluorene(2P9PPF, 30 nm)/ bathocuproine (BCP, with different thickness)/Alq{sub 3} : DCJTB (DCJTB = 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7- tetramethyljulolidyl-9-enyl)-4H-pyran, Alq{sub 3} = tris(8-hydroxyquinolino) aluminium(III), 2% in mass ratio, 30 nm)/Mg : Ag(250 nm). The dependence of electroluminescence (EL) spectra on the BCP layer thickness and operating voltage has been investigated quantitatively. It is shown that the emission colour of the devices changes from red to blue at 8 V when the BCP layer thickness changes from 1 to 10 nm. The emission colour of the devices also varies with the applying voltage even in a given device. The ratio of blue emission originating from 2P9PPF to the red emission originating from DCJTB increases with the applying voltage. Based on the hole blocking effect of the BCP layer, we deduced the dependence of this ratio on the BCP layer thickness and simulated the experimental result well. It is also proposed that the variation of the EL spectrum with the voltage can be attributed to the varying hole blocking effect under the varying electric field, which resulted in a recombination zone shift, and the exciton dissociation effect in the electric field.

Surface modification with MK-2 organic dye in a ZnO/P3HT hybrid solar cell: Impact on device performance

Directory of Open Access Journals (Sweden)

Yu Jin Kim

2014-07-01

Full Text Available The photovoltaic performance of a hybrid ZnO/P3HT heterojunction was improved by modifying the device surface with the MK-2 dye. This organic dye enhanced the compatibility between the polymer and the metal oxide, increased the exciton separation efficiency, and improved the molecular ordering in the charge transport network. The resulting device displayed a substantial enhancement in the photocurrent, open circuit voltage, and fill factor, leading to a 12-fold increase in the power conversion efficiency relative to the unmodified device, from 0.13% to 1.53%.

Parameter extraction from I-V characteristics of PV devices

Energy Technology Data Exchange (ETDEWEB)

Macabebe, Erees Queen B. [Department of Electronics, Computer and Communications Engineering, Ateneo de Manila University, Loyola Heights, Quezon City 1108 (Philippines); Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Sheppard, Charles J. [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa); Dyk, E. Ernest van [Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2011-01-15

Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells, as well as, CuInSe{sub 2}, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance. (author)

The infrared camera system on the HL-2A tokamak device

International Nuclear Information System (INIS)

Li Wei; Lu Jie; Yi Ping

2009-04-01

In order to measure and analyze the heat flux on the divertor plate under different discharge conditions, an infrared camera diagnostic system for HL-2A Device has been developed. The infrared camera diagnostic system mainly includes the thermograph with uncooled microbolometer Focal Plane Array detector, Zinc Selenide window, Firewire Fiber Repeaters, 50 m long fibers, magnetic shielding box and data acquisition card. The diagnostic system can provide high spatial resolution, long distance control and real-time data acquisition. Based on the surface temperature measured by the infrared camera diagnostic system and the knowledge of the copper thermal properties, the heat flux can be derived by heat conduct model. The infrared camera diagnostic system and preliminary results are presented in details. (authors)

Evaluation of pharmacokinetics, user handling, and tolerability of peginterferon alfa-2a (40 kDa delivered via a disposable autoinjector device

Directory of Open Access Journals (Sweden)

Varunok P

2011-11-01

Full Text Available Peter Varunok1, Eric Lawitz2, Kimberly L Beavers3, Gary Matusow4, Ruby Leong5, Nathalie Lambert6, Coen Bernaards7, Jonathan Solsky5, Barbara J Brennan5, Cynthia Wat8, Anne Bertasso51Gastroenterology Associates, Poughkeepsie, NY, USA; 2Alamo Medical Research, San Antonio, TX, USA; 3Asheville Gastroenterology, Asheville, NC, USA; 4Gastroenterology Group, South Jersey, NJ, USA; 5Roche, Nutley, NJ, USA; 6Roche, Basel, Switzerland; 7Roche, San Francisco, CA, USA; 8Roche, Welwyn, UKBackground: Peginterferon alfa-2a (40 kDa is currently administered using a prefilled syringe. The peginterferon alfa-2a disposable autoinjector is a new safety-engineered device designed to facilitate injection and reduce the risk of needlestick injuries. The analysis of two open-label Phase I trials evaluated the pharmacokinetics, successful administration, and tolerability of peginterferon alfa-2a when using the autoinjector. The studies were performed to support the filing and registration of the autoinjector device.Methods: In trial 1, 50 healthy adult subjects received one 180 µg dose of peginterferon alfa-2a via the autoinjector. Serial blood samples were collected predose, up to 336 hours following drug administration, and at follow-up (28 ± 3 days post-dosing for noncompartmental pharmacokinetic analysis. Trial 2 randomized 60 adult patients with chronic hepatitis C to 180 µg peginterferon alfa-2a once weekly by the autoinjector or prefilled syringe for 3 weeks followed by the alternative device (prefilled syringe or autoinjector, respectively for 3 weeks. Patients also received ribavirin. Administration by the devices was evaluated under direct observation by a study staff member and by patient subjective assessment.Results: In trial 1, following a single dose of peginterferon alfa-2a, the maximum plasma concentration was 16.1 ± 5.3 ng/mL (mean ± standard deviation, and area under the concentration time curve (0–168 hours was 1996 ± 613 ng · hour

Fingerprinting Mobile Devices Using Personalized Configurations

Directory of Open Access Journals (Sweden)

Kurtz Andreas

2016-01-01

Full Text Available Recently, Apple removed access to various device hardware identifiers that were frequently misused by iOS third-party apps to track users. We are, therefore, now studying the extent to which users of smartphones can still be uniquely identified simply through their personalized device configurations. Using Apple’s iOS as an example, we show how a device fingerprint can be computed using 29 different configuration features. These features can be queried from arbitrary thirdparty apps via the official SDK. Experimental evaluations based on almost 13,000 fingerprints from approximately 8,000 different real-world devices show that (1 all fingerprints are unique and distinguishable; and (2 utilizing a supervised learning approach allows returning users or their devices to be recognized with a total accuracy of 97% over time

Stability, bistability and instability of amorphous ZrO2 resistive memory devices

International Nuclear Information System (INIS)

Parreira, P; Paterson, G W; McVitie, S; MacLaren, D A

2016-01-01

Amorphous zirconium oxide thin films deposited at room temperature, sandwiched between Pt and Ti electrodes, show resistive bipolar resistive switching with good overall performance figures (retention, ON/OFF ratio and durability). A variability observed during electrical characterisation is consistent with the coexistence of two different resistive switching mechanisms within the ZrO 2 layer. Electron energy loss spectroscopy is used to map chemical variations across the device on the nanoscale. Partial oxidation of the Ti electrode creates an ohmic contact with zirconia and injects positively charged oxygen vacancies into the zirconia layer that are then responsible for resistive switching at the Pt / zirconia interface. (paper)

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

Science.gov (United States)

Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

2018-04-01

Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Science.gov (United States)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Release strategies for making transferable semiconductor structures, devices and device components

Science.gov (United States)

Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

2014-11-25

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Field-Programmable Logic Devices with Optical Input Output

Science.gov (United States)

Szymanski, Ted H.; Saint-Laurent, Martin; Tyan, Victor; Au, Albert; Supmonchai, Boonchuay

2000-02-01

A field-programmable logic device (FPLD) with optical I O is described. FPLD s with optical I O can have their functionality specified in the field by means of downloading a control-bit stream and can be used in a wide range of applications, such as optical signal processing, optical image processing, and optical interconnects. Our device implements six state-of-the-art dynamically programmable logic arrays (PLA s) on a 2 mm 2 mm die. The devices were fabricated through the Lucent Technologies Advanced Research Projects Agency Consortium for Optical and Optoelectronic Technologies in Computing (Lucent ARPA COOP) workshop by use of 0.5- m complementary metal-oxide semiconductor self-electro-optic device technology and were delivered in 1998. All devices are fully functional: The electronic data paths have been verified at 200 MHz, and optical tests are pending. The device has been programmed to implement a two-stage optical switching network with six 4 4 crossbar switches, which can realize more than 190 10 6 unique programmable input output permutations. The same device scaled to a 2 cm 2 cm substrate could support as many as 4000 optical I O and 1 Tbit s of optical I O bandwidth and offer fully programmable digital functionality with approximately 110,000 programmable logic gates. The proposed optoelectronic FPLD is also ideally suited to realizing dense, statically reconfigurable crossbar switches. We describe an attractive application area for such devices: a rearrangeable three-stage optical switch for a wide-area-network backbone, switching 1000 traffic streams at the OC-48 data rate and supporting several terabits of traffic.

S-Band POSIX Device Drivers for RTEMS

Science.gov (United States)

Lux, James P.; Lang, Minh; Peters, Kenneth J.; Taylor, Gregory H.

2011-01-01

This is a set of POSIX device driver level abstractions in the RTEMS RTOS (Real-Time Executive for Multiprocessor Systems real-time operating system) to SBand radio hardware devices that have been instantiated in an FPGA (field-programmable gate array). These include A/D (analog-to-digital) sample capture, D/A (digital-to-analog) sample playback, PLL (phase-locked-loop) tuning, and PWM (pulse-width-modulation)-controlled gain. This software interfaces to Sband radio hardware in an attached Xilinx Virtex-2 FPGA. It uses plug-and-play device discovery to map memory to device IDs. Instead of interacting with hardware devices directly, using direct-memory mapped access at the application level, this driver provides an application programming interface (API) offering that easily uses standard POSIX function calls. This simplifies application programming, enables portability, and offers an additional level of protection to the hardware. There are three separate device drivers included in this package: sband_device (ADC capture and DAC playback), pll_device (RF front end PLL tuning), and pwm_device (RF front end AGC control).

Wireless device monitoring methods, wireless device monitoring systems, and articles of manufacture

Science.gov (United States)

McCown, Steven H [Rigby, ID; Derr, Kurt W [Idaho Falls, ID; Rohde, Kenneth W [Idaho Falls, ID

2012-05-08

Wireless device monitoring methods, wireless device monitoring systems, and articles of manufacture are described. According to one embodiment, a wireless device monitoring method includes accessing device configuration information of a wireless device present at a secure area, wherein the device configuration information comprises information regarding a configuration of the wireless device, accessing stored information corresponding to the wireless device, wherein the stored information comprises information regarding the configuration of the wireless device, comparing the device configuration information with the stored information, and indicating the wireless device as one of authorized and unauthorized for presence at the secure area using the comparing.

Class 1 devices case studies in medical devices design

CERN Document Server

Ogrodnik, Peter J

2014-01-01

The Case Studies in Medical Devices Design series consists of practical, applied case studies relating to medical device design in industry. These titles complement Ogrodnik's Medical Device Design and will assist engineers with applying the theory in practice. The case studies presented directly relate to Class I, Class IIa, Class IIb and Class III medical devices. Designers and companies who wish to extend their knowledge in a specific discipline related to their respective class of operation will find any or all of these titles a great addition to their library. Class 1 Devices is a companion text to Medical Devices Design: Innovation from Concept to Market. The intention of this book, and its sister books in the series, is to support the concepts presented in Medical Devices Design through case studies. In the context of this book the case studies consider Class I (EU) and 510(k) exempt (FDA) . This book covers classifications, the conceptual and embodiment phase, plus design from idea to PDS. These title...

Detection of x-rays emitted from a plasma focus device with energy of 2.8 KJ, and its applications in plasma diagnostic and radiography

International Nuclear Information System (INIS)

AL-Hawat, Sh.; Akel, M.

2011-06-01

The local plasma focus device was modified by replacing the old capacitors (25μF,20 kV ,1.43μH ) and the open spark gap by new capacitors with (25μF,20 kV ,200 nH ) and a new closed spark gap, so instead of a current of 50 kA as a maximum value we obtained a maximum current about 120 kA. The modified device is capable now to generate x-rays, which was confirmed by taking some radiographies for metallic pieces, electronic elements and others . In addition to that some diagnostics were carried out on the device using Ohm voltage divider to record voltage curves, Rogovskii coil for measuring the current, and five channel diodes to evaluate the temporal evolution of x-rays generated in the device working on argon vs. pressure and voltage. The generation of the soft x-ray emission in a low energy 2.8 kJ plasma focus device operated with argon using a detector of five PIN-Si BPX-65 diodes filtered with different foils of Mylar, Al and Cu. Spectral analysis using the recorded x-ray signals ratio method shows that there are two components in the x-ray emissions: one arising from the focused argon plasma with temperature of 2.5 keV and the other arising from the electron beam activity on copper anode, where the second component is predominant in most of investigated experiments due to the used of solid anode. Numerical experiments were carried out using five phases radiative Lee model RADPF5.15d-dd with N 2 , O 2 , Ar, Ne gases on plasma focus device AECS PF1-2 (or PF SY1-2) for its characterization and soft x-ray optimization. (author)

Selective shielding device for scintiphotography

International Nuclear Information System (INIS)

Harper, J.W.; Kay, T.D.

1976-01-01

A selective shielding device to be used in combination with a scintillation camera is described. The shielding device is a substantially oval-shaped configuration removably secured to the scintillation camera. As a result of this combination scanning of preselected areas of a patient can be rapidly and accurately performed without the requirement of mounting any type of shielding paraphernalia on the patient. 1 claim, 2 drawing figures

Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

Science.gov (United States)

Pron, G; Ieraci, L; Kaulback, K

2012-01-01

being reprogrammed remotely, although this feature is being tested in pilot settings. Every RMS is specifically designed by a manufacturer for their cardiac implant devices. For Internet-based device-assisted RMSs, this customization includes details such as web application, multiplatform sensors, custom algorithms, programming information, and types and methods of alerting patients and/or physicians. The addition of peripherals for monitoring weight and pressure or communicating with patients through the onsite communicators also varies by manufacturer. Internet-based device-assisted RMSs for CIEDs are intended to function as a surveillance system rather than an emergency system. Health care providers therefore need to learn each application, and as more than one application may be used at one site, multiple applications may need to be reviewed for alarms. All RMSs deliver system integrity alerting; however, some systems seem to be better geared to fast arrhythmic alerting, whereas other systems appear to be more intended for remote follow-up or supplemental remote disease management. The different RMSs may therefore have different impacts on workflow organization because of their varying frequency of interrogation and methods of alerts. The integration of these proprietary RM web-based registry systems with hospital-based electronic health record systems has so far not been commonly implemented. Currently there are 2 general types of RMSs: those that transmit device diagnostic information automatically and without patient assistance to secure Internet-based registry systems, and those that require patient assistance to transmit information. Both systems employ the use of preprogrammed alerts that are either transmitted automatically or at regular scheduled intervals to patients and/or physicians. The current web applications, programming, and registry systems differ greatly between the manufacturers of transmitting cardiac devices. In Canada there are currently 4

Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices

International Nuclear Information System (INIS)

Porro, Samuele; Conti, Daniele; Guastella, Salvatore; Ricciardi, Carlo; Jasmin, Alladin; Pirri, Candido F.; Bejtka, Katarzyna; Perrone, Denis; Chiolerio, Alessandro

2016-01-01

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO 2 thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO 2 thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO 2 thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications

Radiation effects modeling and experimental data on I2L devices

International Nuclear Information System (INIS)

Long, D.M.; Repper, C.J.; Ragonese, L.J.; Yang, N.T.

1976-01-01

This paper reports on an Integrated Injection Logic (I 2 L) radiation effects model which includes radiation effects phenomena. Twenty-five individual current components were identified for an I 2 L logic gate by assuming wholly vertical or wholly horizontal current flow. Equations were developed for each component in terms of basic parameters such as doping profiles, distances, and diffusion lengths, and set up on a computer for specific logic cell configurations. For neutron damage, the model shows excellent agreement with experimental data. Reactor test results on GE I 2 L samples showed a neutron hardness level in the range of 6 x 10 12 to 3 x 10 13 n/cm 2 (1 MeV Eq), and cobalt-60 tests showed a total dose hardness of 6 x 10 4 to greater than 1 x 10 6 Rads(Si) (all device types at an injection current of 50 microamps per gate). It was found that significant hardness improvements could be achieved by: (a) diffusion profile variation, (b) utilizing a tight N + collar around the cell, and (c) locating the collector close to the injector. Flash X-ray tests showed a transient logic upset threshold of 1 x 10 9 Rads(Si)/sec for a 28 ns pulse, and a survival level greater than 2 x 10 12 Rads(Si)/sec

Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment

Science.gov (United States)

Jeon, Hyeonseong; Kang, Seongjong; Oh, Hwansool

2016-01-01

Plasma treatment reduces the roughness of the indium-tin-oxide (ITO) interface in organic light emitting diodes (OLEDs). Oxygen gas is typically used in the plasma treatment of conventional OLED devices. However, in this study, nitrogen and oxygen gases were used for surface treatment to improve the properties of ITO. To investigate the improvements resulting from the use of nitrogen and oxygen plasma treatment, fabricated green OLED devices. The device's structure was ITO (600 Å) / α-NPD (500 Å) / Alq3:NKX1595 (400 Å:20 Å,5%) / LiF / Al:Li (10 Å:1000 Å). The plasma treatment was performed in a capacitive coupled plasma (CCP) type plasma treatment chamber similar to that used in the traditional oxygen plasma treatment. The results of this study show that the combined nitrogen/oxygen plasma treatment increases the lifetime, current density, and brightness of the fabricated OLED while decreasing the operating voltage relative to those of OLEDs fabricated using oxygen plasma treatment.

Evaluation of the Stryker S2 IM Nail Distal Targeting Device for reduction of radiation exposure: a case series study.

Science.gov (United States)

Anastopoulos, George; Ntagiopoulos, Panagiotis G; Chissas, Dionisios; Loupasis, George; Asimakopoulos, Antonios; Athanaselis, Eustratios; Megas, Panagiotis

2008-10-01

Distal locking is one challenging step during intramedullary nailing of femoral shaft fractures that can lead to an increase of radiation exposure. In the present study, the authors describe a technique for the distal locking of femoral nails, implementing a new targeting device in an attempt to reduce radiation exposure and operational time. Over a 2-year period, 127 consecutive cases of femoral shaft fractures were included in the study. All cases were treated with nailing of femoral shaft fractures with an unslotted reamed antegrade femoral nail and distal locking was performed with the use of a proximally mounted aiming device. Mean duration of the procedure was 63.5 18.1 min while the duration for distal locking was 6.6 +/- 2.6 min. In all successful cases, exposure from intraoperative fluoroscopy was 17.2 +/- 7.4 s for the whole operative procedure, and for distal locking was 2 shots, 1.35 s (range, 0.9-2.2 s) and 1.9 mGy (range, 1.1-2.9 mGy). Five cases (3.9%) were unsuccessful, but overall no intraoperative complications were encountered from the application of this technique. The ability of the device to correspond to the level of nail deformation and to properly identify the distal holes, reduced exposure to radiation compared to other published reports, and should be considered as a valuable tool for distal locking of femoral fractures.

Fast Switching ITO Free Electrochromic Devices

DEFF Research Database (Denmark)

Jensen, Jacob; Hösel, Markus; Kim, Inyoung

2014-01-01

devices with a response time of 2 s for an optical contrast of 27%. The other design utilizes an embedded silver grid electrode whereupon response times of 0.5 s for a 30% optical contrast are realized when oxidizing the device. A commercially available conductive poly(3,4-ethylenedioxythiophene):poly(4...

Molecular Intercalation and Cohesion of Organic Bulk Heterojunction Photovoltaic Devices

KAUST Repository

Bruner, Christopher; Miller, Nichole C.; McGehee, Michael D.; Dauskardt, Reinhold H.

2013-01-01

The phase separated bulk heterojunction (BHJ) layer in BHJ polymer:fullerene organic photovoltaic devices (OPV) are mechanically weak with low values of cohesion. Improved cohesion is important for OPV device thermomechanical reliability. BHJ devices are investigated and how fullerene intercalation within the active layer affects cohesive properties in the BHJ is shown. The intercalation of fullerenes between the side chains of the polymers poly(3,3″′-didocecyl quaterthiophene) (PQT-12) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) is shown to enhance BHJ layer cohesion. Cohesion values range from ≈1 to 5 J m -2, depending on the polymer:fullerene blend, processing conditions, and composition. Devices with non-intercalated BHJ layers are found to have significantly reduced values of cohesion. The resulting device power conversion efficiencies (PCE) are also investigated and correlated with the device cohesion. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Molecular Intercalation and Cohesion of Organic Bulk Heterojunction Photovoltaic Devices

KAUST Repository

Bruner, Christopher

2013-01-17

The phase separated bulk heterojunction (BHJ) layer in BHJ polymer:fullerene organic photovoltaic devices (OPV) are mechanically weak with low values of cohesion. Improved cohesion is important for OPV device thermomechanical reliability. BHJ devices are investigated and how fullerene intercalation within the active layer affects cohesive properties in the BHJ is shown. The intercalation of fullerenes between the side chains of the polymers poly(3,3″′-didocecyl quaterthiophene) (PQT-12) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) is shown to enhance BHJ layer cohesion. Cohesion values range from ≈1 to 5 J m -2, depending on the polymer:fullerene blend, processing conditions, and composition. Devices with non-intercalated BHJ layers are found to have significantly reduced values of cohesion. The resulting device power conversion efficiencies (PCE) are also investigated and correlated with the device cohesion. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tamper-indicating devices and safeguards seals evaluation test report. Volume 2

Energy Technology Data Exchange (ETDEWEB)

Horton, P.R.V.; Waddoups, I.G.

1995-08-01

Volume I was based on a survey and an evaluation of seals that are used as tamper-indicating devices at DOE facilities. For that evaluation, currently available seals were physically and environmentally evaluated under two broad categories: handling durability and tamper resistance. Our study indicated that the environmental testing had no negative effects on the results of the mechanical tests. In Volume II, we evaluate some loop, fiber optic loop, and pressure-sensitive seals that are not used at DOE facilities. However, we continue to focus on qualities required by DOE: durability and tamper resistance. The seals are comparatively rated, and recommendations are made for using currently available seals and new tamper-indicating device technology.

Tamper-indicating devices and safeguards seals evaluation test report. Volume 2

International Nuclear Information System (INIS)

Horton, P.R.V.; Waddoups, I.G.

1995-08-01

Volume I was based on a survey and an evaluation of seals that are used as tamper-indicating devices at DOE facilities. For that evaluation, currently available seals were physically and environmentally evaluated under two broad categories: handling durability and tamper resistance. Our study indicated that the environmental testing had no negative effects on the results of the mechanical tests. In Volume II, we evaluate some loop, fiber optic loop, and pressure-sensitive seals that are not used at DOE facilities. However, we continue to focus on qualities required by DOE: durability and tamper resistance. The seals are comparatively rated, and recommendations are made for using currently available seals and new tamper-indicating device technology

Workgroup S3T. Report 2: stigmatic coma free devices

International Nuclear Information System (INIS)

Pouey, M.

1983-04-01

The first paper deals with the design of stimatic normal and grazing incidence devices fitted with spherical holographic grating. In the second one, generalized conditions for full stigmatism are given for spherical holographic grating used in normal incidence. The third one deals with grazing incidence

Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

Science.gov (United States)

Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

2018-03-01

In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

Development of a physical and electronic model for RuO 2 nanorod rectenna devices

Science.gov (United States)

Dao, Justin

Ruthenium oxide (RuO2) nanorods are an emergent technology in nanostructure devices. As the physical size of electronics approaches a critical lower limit, alternative solutions to further device miniaturization are currently under investigation. Thin-film nanorod growth is an interesting technology, being investigated for use in wireless communications, sensor systems, and alternative energy applications. In this investigation, self-assembled RuO2 nanorods are grown on a variety of substrates via a high density plasma, reactive sputtering process. Nanorods have been found to grow on substrates that form native oxide layers when exposed to air, namely silicon, aluminum, and titanium. Samples were analyzed with Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) techniques. Conductive Atomic Force Microscopy (C-AFM) measurements were performed on single nanorods to characterize structure and electrical conductivity. The C-AFM probe tip is placed on a single nanorod and I-V characteristics are measured, potentially exhibiting rectifying capabilities. An analysis of these results using fundamental semiconductor physics principles is presented. Experimental data for silicon substrates was most closely approximated by the Simmons model for direct electron tunneling, whereas that of aluminum substrates was well approximated by Fowler-Nordheim tunneling. The native oxide of titanium is regarded as a semiconductor rather than an insulator and its ability to function as a rectifier is not strong. An electronic model for these nanorods is described herein.

Electronic device and method of manufacturing an electronic device

NARCIS (Netherlands)

2009-01-01

An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of light detecting units

Enhanced thermal stability of RuO2/polyimide interface for flexible device applications

Science.gov (United States)

Music, Denis; Schmidt, Paul; Chang, Keke

2017-09-01

We have studied the thermal stability of RuO2/polyimide (Kapton) interface using experimental and theoretical methods. Based on calorimetric and spectroscopic analyses, this inorganic-organic system does not exhibit any enthalpic peaks as well as all bonds in RuO2 and Kapton are preserved up to 500 °C. In addition, large-scale density functional theory based molecular dynamics, carried out in the same temperature range, validates the electronic structure and points out that numerous Ru-C and a few Ru-O covalent/ionic bonds form across the RuO2/Kapton interface. This indicates strong adhesion, but there is no evidence of Kapton degradation upon thermal excitation. Furthermore, RuO2 does not exhibit any interfacial bonds with N and H in Kapton, providing additional evidence for the thermal stability notion. It is suggested that the RuO2/Kapton interface is stable due to aromatic architecture of Kapton. This enhanced thermal stability renders Kapton an appropriate polymeric substrate for RuO2 containing systems in various applications, especially for flexible microelectronic and energy devices.

Recent progress in printed 2/3D electronic devices

Science.gov (United States)

Klug, Andreas; Patter, Paul; Popovic, Karl; Blümel, Alexander; Sax, Stefan; Lenz, Martin; Glushko, Oleksandr; Cordill, Megan J.; List-Kratochvil, Emil J. W.

2015-09-01

New, energy-saving, efficient and cost-effective processing technologies such as 2D and 3D inkjet printing (IJP) for the production and integration of intelligent components will be opening up very interesting possibilities for industrial applications of molecular materials in the near future. Beyond the use of home and office based printers, "inkjet printing technology" allows for the additive structured deposition of photonic and electronic materials on a wide variety of substrates such as textiles, plastics, wood, stone, tiles or cardboard. Great interest also exists in applying IJP in industrial manufacturing such as the manufacturing of PCBs, of solar cells, printed organic electronics and medical products. In all these cases inkjet printing is a flexible (digital), additive, selective and cost-efficient material deposition method. Due to these advantages, there is the prospect that currently used standard patterning processes can be replaced through this innovative material deposition technique. A main issue in this research area is the formulation of novel functional inks or the adaptation of commercially available inks for specific industrial applications and/or processes. In this contribution we report on the design, realization and characterization of novel active and passive inkjet printed electronic devices including circuitry and sensors based on metal nanoparticle ink formulations and the heterogeneous integration into 2/3D printed demonstrators. The main emphasis of this paper will be on how to convert scientific inkjet knowledge into industrially relevant processes and applications.

Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications

NARCIS (Netherlands)

Latkowski, S.; van Veldhoven, P.J.; Hänsel, A.; D'Agostino, D.; Rabbani-Haghighi, H.; Docter, B.; Bhattacharya, N.; Thijs, P.J.A.; Ambrosius, H.P.M.M.; Smit, M.K.; Williams, K.A.; Bente, E.A.J.M.

2017-01-01

In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar,

Surface and interface analysis of photovoltaic devices

International Nuclear Information System (INIS)

Kazmerski, L.L.

1983-01-01

Interface chemistry can control the performance and operational lifetime of solar cells, especially thin-film, polycrystalline devices. The composition and elemental integrity of device surfaces, internal junctions, layer and defect interfces can be related to and dominate the electroptical characteristics of the materials/ devices. This paper examines the compositional properties of external and internal surfaces in polycrystaline solar cells, utilizing high-resolution, complementary surface analysis techniques. The electronic properties of these same regions are evaluated using microelectrical characterization methods. Cell performance, in turn, is explained in terms of these relation-ships. Specifically, two solar cell types are used as examples: (1) the polycrystalline Si homojunction and (2) the (Cd Zn)S/CuInSe 2 heterojunction. Throughout these investigations of photovoltaic devices, the limitations and strengths of the surface and electrical microanalyses techniques are emphasized and discussed. (Author) [pt

A graphene integrated highly transparent resistive switching memory device

Science.gov (United States)

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

2018-05-01

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

47 CFR 2.1091 - Radiofrequency radiation exposure evaluation: mobile devices.

Science.gov (United States)

2010-10-01

... transmission of a signal. In general, maximum average power levels must be used to determine compliance. (3) If... workers that can be easily re-located, such as wireless devices associated with a personal computer, are... Satellite Communications Services, the General Wireless Communications Service, the Wireless Communications...

30 CFR 250.511 - Traveling-block safety device.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 2 2010-07-01 2010-07-01 false Traveling-block safety device. 250.511 Section... Traveling-block safety device. All units being used for well-completion operations that have both a traveling block and a crown block must be equipped with a safety device that is designed to prevent the...

Bidirectional current triggering in planar devices based on serially connected VO2 thin films using 965 nm laser diode.

Science.gov (United States)

Kim, Jihoon; Park, Kyongsoo; Kim, Bong-Jun; Lee, Yong Wook

2016-08-08

By incorporating a 965 nm laser diode, the bidirectional current triggering of up to 30 mA was demonstrated in a two-terminal planar device based on serially connected vanadium dioxide (VO2) thin films grown by pulsed laser deposition. The bidirectional current triggering was realized by using the focused beams of laser pulses through the photo-thermally induced phase transition of VO2. The transient responses of laser-triggered currents were also investigated when laser pulses excited the device at a variety of pulse widths and repetition rates of up to 4.0 Hz. A switching contrast between off- and on-state currents was obtained as ~8333, and rising and falling times were measured as ~39 and ~29 ms, respectively, for 50 ms laser pulses.

Colour Reproduction on Tablet Devices

Directory of Open Access Journals (Sweden)

Vladimir Zorić

2014-07-01

Full Text Available With the advent of Internet and mobile devices client services and other print production are migrating more and more to online platforms. In a recent technology changeover it is obvious that there is growing number of printers as well need from the customers for the print service providers to expand their business to online and mobile platforms. With this technological transition there are some open questions regarding the possibilities of using the tablet devices for colour soft proofing and other colour related operations. As a display devices on a hardware level there are large similarities with the desktop display devices but the operating systems which are driving them are not yet colour smart. There have been some initial attempts to characterize the colour reproduction on this type of devices and find a possibility of using them not just for information content but also for colour managed content. In this study we have tested several tablets (Apple iPad2,Asus Transformer TF101, Samsung Galaxy Tab 1 with different display and OS technology and tested a software which is intended for colour managed viewing of the reproduction. We have measured the colour reproduction of the tablets with the digital version of the GretagMacbeth ColorChecker card and have calculated the colour differences between the colour chart data and the displayed data. We have calibrated the Ipad2 with the only existing colour management tool the Spyder Gallery and we have also tested the chart display with and without the colour correction of the software. We have found that there are differences in the colour reproduction of the display technologies and that the possibilities of a real colour managed workflow has yet to be resolved on the OS level of tablet and mobile devices

The moisture content monitoring device for PuO2 using self neutron radiation

International Nuclear Information System (INIS)

Bulanenko, Valeriy I.; Sviridov, Victor; Frolov, Vladimir V.; Ryazanov, Boris G.; Talanov, Vladimir V.

2003-01-01

Solutions technology of plutonium dioxide powders production inevitably leads to free or chemically bound hydrogen to be present in these powders. This work is devoted to the nondestructive method of PuO 2 powder moisture measurement based on application of the effect of neutron moderation caused by water. Plutonium dioxide is fast neutron source, while 3 He counters located in the nickel and polyethylene annular reflectors surrounding PuO 2 serve as detectors. In the work wide range of issues are considered related to practical implementation of the moisture measurement method by detecting inherent neutron radiation of plutonium dioxide powder. The most practical design of the detector has been chosen, which include two 3 He detectors having different reflectors mounted to the device. The absolute error of measurement does not exceed 0.2wt% with confidence coefficient of 0.95. Duration of analysis ∼5 minutes. (author)

Optical Regeneration and Noise in Semiconductor Devices

DEFF Research Database (Denmark)

Öhman, Filip

2005-01-01

In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

Bioorganic nanodots for non-volatile memory devices

International Nuclear Information System (INIS)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

2013-01-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO 2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device

Real-world geographic variations in the use of cardiac implantable electronic devices - The PANORAMA 2 observational cohort study.

Science.gov (United States)

Bastian, Dirk; Ebrahim, Iftikhar O; Chen, Ju-Yi; Chen, Mien-Cheng; Huang, Dejia; Huang, Jin-Long; Kuznetsov, Vadim A; Maus, Bärbel; Naik, Ajay M; Verhees, Koen J P; Fagih, Ahmed R Al

2018-06-13

Currently, several geographies around the world remain underrepresented in medical device trials. The PANORAMA 2 study was designed to assess contemporary region-specific differences in clinical practice patterns of patients with cardiac implantable electronic devices (CIEDs). In this prospective, multicenter, observational, multi-national study, baseline and implant data of 4,706 patients receiving Medtronic CIEDs (either de novo device implants, replacements, or upgrades) were analyzed, consisting of: 54% implantable pulse generators (IPGs), 20.3% implantable cardiac defibrillators (ICDs), 15% cardiac resynchronization therapy defibrillators (CRT-Ds), 5.1% cardiac resynchronization therapy pacemakers (CRT-Ps), from 117 hospitals in 23 countries across 4 geographical regions between 2012 and 2016. For all device types, in all regions, there were less females than males enrolled, and women were less likely to have ischemic cardiomyopathy. Implant procedure duration differed significantly across the geographies for all device types. Subjects from emerging countries, women and older patients were less likely to receive a magnetic resonance imaging (MRI)-compatible device. Defibrillation testing differed significantly between the regions. European patients had the highest rates of atrial fibrillation (AF), and the lowest number of implanted single-chamber IPGs. Evaluation of stroke history suggested that the general embolic risk is more strongly associated with stroke than AF. We provide comprehensive descriptive data on patients receiving Medtronic CIEDs from several geographies, some of which are understudied in randomized controlled trials (RCTs). We found significant variations in patient characteristics. Several medical decisions appear to be affected by socioeconomic factors. Long-term follow-up data will help evaluate if these variations require adjustments to outcome expectations. This article is protected by copyright. All rights reserved. This article is

Gaming Device Usage Patterns Predict Internet Gaming Disorder: Comparison across Different Gaming Device Usage Patterns

OpenAIRE

Soo-Hyun Paik; Hyun Cho; Ji-Won Chun; Jo-Eun Jeong; Dai-Jin Kim

2017-01-01

Gaming behaviors have been significantly influenced by smartphones. This study was designed to explore gaming behaviors and clinical characteristics across different gaming device usage patterns and the role of the patterns on Internet gaming disorder (IGD). Responders of an online survey regarding smartphone and online game usage were classified by different gaming device usage patterns: (1) individuals who played only computer games; (2) individuals who played computer games more than smart...

PLASMA DEVICE

Science.gov (United States)

Gow, J.D.; Wilcox, J.M.

1961-12-26

A device is designed for producing and confining highenergy plasma from which neutrons are generated in copious quantities. A rotating sheath of electrons is established in a radial electric field and axial magnetic field produced within the device. The electron sheath serves as a strong ionizing medium to gas introdueed thereto and also functions as an extremely effective heating mechanism to the resulting plasma. In addition, improved confinement of the plasma is obtained by ring magnetic mirror fields produced at the ends of the device. Such ring mirror fields are defined by the magnetic field lines at the ends of the device diverging radially outward from the axis of the device and thereafter converging at spatial annular surfaces disposed concentrically thereabout. (AFC)

Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol-gel method with forming-free operation

Science.gov (United States)

Jian, Wen-Yi; You, Hsin-Chiang; Wu, Cheng-Yen

2018-01-01

In this work, we used a sol-gel process to fabricate a ZnO-ZrO2-stacked resistive switching random access memory (ReRAM) device and investigated its switching mechanism. The Gibbs free energy in ZnO, which is higher than that in ZrO2, facilitates the oxidation and reduction reactions of filaments in the ZnO layer. The current-voltage (I-V) characteristics of the device revealed a forming-free operation because of nonlattice oxygen in the oxide layer. In addition, the device can operate under bipolar or unipolar conditions with a reset voltage of 0 to ±2 V, indicating that in this device, Joule heating dominates at reset and the electric field dominates in the set process. Furthermore, the characteristics reveal why the fabricated device exhibits a greater discrete distribution phenomenon for the set voltage than for the reset voltage. These results will enable the fabrication of future ReRAM devices with double-layer oxide structures with improved characteristics.

30 CFR 250.611 - Traveling-block safety device.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 2 2010-07-01 2010-07-01 false Traveling-block safety device. 250.611 Section... Traveling-block safety device. After May 31, 1989, all units being used for well-workover operations which have both a traveling block and a crown block shall be equipped with a safety device which is designed...

Rf superconducting devices

International Nuclear Information System (INIS)

Hartwig, W.H.; Passow, C.

1975-01-01

Topics discussed include (1) the theory of superconductors in high-frequency fields (London surface impedance, anomalous normal surface resistance, pippard nonlocal theory, quantum mechanical model, superconductor parameters, quantum mechanical calculation techniques for the surface, impedance, and experimental verification of surface impedance theories); (2) residual resistance (separation of losses, magnetic field effects, surface resistance of imperfect and impure conductors, residual loss due to acoustic coupling, losses from nonideal surfaces, high magnetic field losses, field emission, and nonlinear effects); (3) design and performance of superconducting devices (design considerations, materials and fabrication techniques, measurement of performance, and frequency stability); (4) devices for particle acceleration and deflection (advantages and problems of using superconductors, accelerators for fast particles, accelerators for particles with slow velocities, beam optical devices separators, and applications and projects under way); (5) applications of low-power superconducting resonators (superconducting filters and tuners, oscillators and detectors, mixers and amplifiers, antennas and output tanks, superconducting resonators for materials research, and radiation detection with loaded superconducting resonators); and (6) transmission and delay lines

Electrochemical detection of volatile organic compounds using a Na{sub 3}Zr{sub 2}Si{sub 2}PO{sub 12}/Bi{sub 2}Cu{sub 0.1}V{sub 0.9}O{sub 5.35} heterojunction device

Energy Technology Data Exchange (ETDEWEB)

Kida, Tetsuya, E-mail: kida@mm.kyushu-u.ac.jp [Department of Energy and Material Sciences, Faculty of Engineering Sciences, Kyushu University, Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Morinaga, Naoki; Kishi, Shotaro [Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Engineering Science, Kyushu University, Kasuga-Koen 6-1, Kasuga, Fukuoka 816-8580 (Japan); An, Ki-Mun; Sim, Kyoung-Won; Chae, Bu-Young [Department of Materials Science and Engineering, Pusan National University, 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Kim, Jung-kwan [Education Center for Green Industry-friendly Fusion Technology (GIFT), Pusan National University, 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Ryu, Bong-Ki [Department of Materials Science and Engineering, Pusan National University, 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Shimanoe, Kengo [Department of Energy and Material Sciences, Faculty of Engineering Sciences, Kyushu University, Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

2011-09-01

Highlights: > A device combining a sodium ion conductor of NASICON (Na{sub 3}Zr{sub 2}Si{sub 2}PO{sub 12}) with an oxygen ion conductor of BiCuVOx (Bi{sub 2}Cu{sub 0.1}V{sub 0.9}O{sub 5.35}) was fabricated. > The device can electrochemically detect volatile organic compounds (VOCs). > The electrochemical oxidation of VOCs with oxide ions occurred as the sensing reaction. > The formation of an oxygen ion-conductive layer at the interface between NASICON and BiCuVOx was suggested. - Abstract: A fast sodium ion conductor, NASICON (Na{sub 3}Zr{sub 2}Si{sub 2}PO{sub 12}), has been widely used for gas sensor applications. In this study, we demonstrate that a device combining NASICON with an oxygen-ion conductor of BiCuVOx (Bi{sub 2}Cu{sub 0.1}V{sub 0.9}O{sub 5.35}) can electrochemically detect volatile organic compounds (VOCs), such as ethanol, formaldehyde, and toluene. The sensing electrode made of BiCuVOx was attached onto a sintered NASICON disk at high temperature to produce an interfacial layer that had a different morphology and composition from those of NASICON and BiCuVOx, as observed by scanning electron microscopy-energy dispersive X-ray spectroscopy analysis. The device in which NASICON was fitted with the BiCuVOx-based electrode was found to efficiently detect VOCs in ppm concentrations. The sensor signal (electromotive force) exceeded 100 mV in response to 10 ppm HCOH at 400 deg. C, demonstrating the high sensitivity of the device. It also exhibited a relatively quick response, reproducible and stable sensor signals, and high selectivity to VOCs. The sensor responses followed behavior typical for mixed-potential-type gas sensors based on oxygen-ion conductors. It was thus suggested that the electrochemical oxidation of VOCs with oxide ions took place at the interfacial oxygen ion-conductive layer that was formed by the reaction of NASICON with BiCuVOx.

Direct observation of interlayer Josephson vortices in heavily Pb-doped Bi2Sr2CaCu2Oy by scanning superconducting quantum interference device microscopy

International Nuclear Information System (INIS)

Kasai, Junpei; Hasegawa, Tetsuya; Okazaki, Noriaki; Koinuma, Hideomi; Nakayama, Yuri; Shimoyama, Jun-ichi; Kishio, Kohji; Motohashi, Teruki; Matsumoto, Yuji

2006-01-01

Josephson vortices trapped in cross-sectional edge surfaces of Pb 0.6 Bi 1.4 Sr 2 CaCu 2 O y has been directly observed by using a scanning superconducting quantum interference device (SQUID) microscope. The magnetic field distribution B z around each vortex is substantially anisotropic, compared with the usual vortex in the ab-plane, and is extended over 100 μm toward the in-plane direction. By fitting a theoretical B z function to experimental ones, c-axis penetration depth λ c was estimated to be 11.2 ±0.7 μm, which is in good agreement with the literature value, 12.6 μm, obtained from the Josephson plasma edge frequency. (author)

Practical microwave electron devices

CERN Document Server

Meurant, Gerard

2013-01-01

Practical Microwave Electron Devices provides an understanding of microwave electron devices and their applications. All areas of microwave electron devices are covered. These include microwave solid-state devices, including popular microwave transistors and both passive and active diodes; quantum electron devices; thermionic devices (including relativistic thermionic devices); and ferrimagnetic electron devices. The design of each of these devices is discussed as well as their applications, including oscillation, amplification, switching, modulation, demodulation, and parametric interactions.

A mixed-method research to investigate the adoption of mobile devices and Web2.0 technologies among medical students and educators.

Science.gov (United States)

Fan, Si; Radford, Jan; Fabian, Debbie

2016-04-19

The past decade has witnessed the increasing adoption of Web 2.0 technologies in medical education. Recently, the notion of digital habitats, Web 2.0 supported learning environments, has also come onto the scene. While there has been initial research on the use of digital habitats for educational purposes, very limited research has examined the adoption of digital habitats by medical students and educators on mobile devices. This paper reports the Stage 1 findings of a two-staged study. The whole study aimed to develop and implement a personal digital habitat, namely digiMe, for medical students and educators at an Australian university. The first stage, however, examined the types of Web 2.0 tools and mobile devices that are being used by potential digiMe users, and reasons for their adoption. In this first stage of research, data were collected through a questionnaire and semi-structured interviews. Questionnaire data collected from 104 participants were analysed using the Predictive Analytics SoftWare (PASW). Frequencies, median and mean values were pursued. Kruskal Wallis tests were then performed to examine variations between views of different participant groups. Notes from the 6 interviews, together with responses to the open-ended section of the questionnaire, were analysed using the constructivist grounded theory approach, to generate key themes relevant to the adoption of Web 2.0 tools and mobile devices. The findings reflected the wide use of mobile devices, including both smart phones and computing tablets, by medical students and educators for learning, teaching and professional development purposes. Among the 22 types of Web 2.0 tools investigated, less than half of these tools were frequently used by the participants, this reflects the mismatch between users' desires and their actual practice. Age and occupation appeared to be the influential factors for their adoption. Easy access to information and improved communication are main purposes. This

Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors

Energy Technology Data Exchange (ETDEWEB)

Laha, P.; Banerjee, I.; Barhai, P.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India); Das, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India); Mahapatra, S.K., E-mail: skm@physics.ucla.edu [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India)

2012-07-15

Highlights: Black-Right-Pointing-Pointer The electron irradiation effects make variation in the device parameters. Black-Right-Pointing-Pointer The device parameters changes due to percentage of defects and charge trapping. Black-Right-Pointing-Pointer Leakage current of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si changes due to interface dangling bonds. Black-Right-Pointing-Pointer The leakage current mechanism of MOS structures is due to Poole-Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si metal-oxide-semiconductor capacitors have been studied. Twelve Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at {approx}1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance-voltage, conductance-voltage and leakage current-voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole-Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

Device characteristics of antenna-coupled metal-insulator-metal diodes (rectenna) using Al2O3, TiO2, and Cr2O3 as insulator layer for energy harvesting applications

Science.gov (United States)

Inac, Mesut; Shafique, Atia; Ozcan, Meric; Gurbuz, Yasar

2015-09-01

Antenna-coupled metal-insulator-metal devices are most potent candidate for future energy harvesting devices. The reason for that they are ultra-high speed devices that can rectify the electromagnetic radiation at high frequencies. In addition to their speed, they are also small devices that can have more number of devices in unit area. In this work, it is aimed design and develop a device which can harvest and detect IR radiation.

High-speed high-efficiency 500-W cw CO2 laser hermetization of metal frames of microelectronics devices

Science.gov (United States)

Levin, Andrey V.

1996-04-01

High-speed, efficient method of laser surface treatment has been developed using (500 W) cw CO2 laser. The principal advantages of CO2 laser surface treatment in comparison with solid state lasers are the basis of the method. It has been affirmed that high efficiency of welding was a consequence of the fundamental properties of metal-IR-radiation (10,6 mkm) interaction. CO2 laser hermetization of metal frames of microelectronic devices is described as an example of the proposed method application.

Medical Devices; General Hospital and Personal Use Devices; Classification of the Ultraviolet Radiation Chamber Disinfection Device. Final order.

Science.gov (United States)

2015-11-20

The Food and Drug Administration (FDA or the Agency) is classifying the ultraviolet (UV) radiation chamber disinfection device into class II (special controls). The special controls that will apply to the device are identified in this order and will be part of the codified language for the UV radiation chamber disinfection device classification. The Agency is classifying the device into class II (special controls) in order to provide a reasonable assurance of safety and effectiveness of the device.

A New Kind of Blue Hybrid Electroluminescent Device.

Science.gov (United States)

Wang, Junling; Li, Zhuan; Liu, Chunmei

2016-04-01

Bright blue Electroluminescence come from a ITO/BBOT doped silica (6 x 10(-3) M) made by a sol-gel method/Al driven by AC with 500 Hz at different voltages and Gaussian analysis under 55 V showed that blue emission coincidenced with typical triple emission from BBOT. This kind of device take advantage of organics (BBOT) and inorganics (silica). Electroluminescence from a single-layered sandwiched device consisting of blue fluorescent dye 2,5-bis (5-tert-butyl-2-benzoxazolyl) thiophene (BBOT) doped silica made by sol-gel method was investigated. A number of concentrations of hybrid devices were prepared and the maxium concentration was 6 x 10(-3) M. Blue electroluminescent (EL) always occurred above a threshold field 8.57 x 10(5) V/cm (30 V) at alternating voltage at 500 HZ. The luminance of the devices increased with the concentration of doped BBOT, but electroluminescence characteristics were different from a single molecule's photoluminescence properties of triple peaks. When analyzing in detail direct-current electroluminescence devices of pure BBOT, a single peak centered at 2.82 eV appeared with the driven voltage increase, which is similar to the hybrid devices. Comparing Gaussian decomposition date between two kinds of devices, the triple peak characteristic of BBOT was consistent. It is inferred that BBOT contributed EL of the hybrid devices mainly and silica may account for a very small part. Meanwhile the thermal stability of matrix silica was measured by Thermal Gravity-Mass Spectroscopy (TG-MS). There is 12 percent weight loss from room temperature to 1000 °C and silica has about 95% transmittance. So the matric silica played an important role in thermal stability and optical stability for BBOT. In addition, this kind of blue electroluminescence device can take advantages of organic materials BBOT and inorganic materials silica. This is a promising way to enrich EL devices, especially enriching inorganic EL color at a low cost.

Continuation of copper and levonorgestrel intrauterine devices: a retrospective cohort study.

Science.gov (United States)

Phillips, Sharon J; Hofler, Lisa G; Modest, Anna M; Harvey, Lara F B; Wu, Lily H; Hacker, Michele R

2017-07-01

Studies conflict on whether the duration of use of the copper intrauterine device is longer than that of the levonorgestrel intrauterine device, and whether women who continue using intrauterine devices differ from those who discontinue. We sought to assess continuation rates and performance of levonorgestrel intrauterine devices compared with copper intrauterine devices over a 5-year period. We performed a retrospective cohort study of 1164 individuals who underwent intrauterine device placement at an urban academic medical center. The analysis focused on a comparison of continuation rates between those using levonorgestrel intrauterine device and copper intrauterine device, factors associated with discontinuation, and intrauterine device performance. We assessed the differences in continuation at discrete time points, pregnancy, and expulsion rates using χ 2 tests and calculated hazard ratios using a multivariable Cox model. Of 1164 women who underwent contraceptive intrauterine device insertion, 956 had follow-up data available. At 2 years, 64.9% of levonorgestrel intrauterine device users continued their device, compared with 57.7% of copper intrauterine device users (P = .11). At 4 years, continuation rates were 45.1% for levonorgestrel intrauterine device and 32.6% for copper intrauterine device (P 4 years was 0.71 (95% confidence interval, 0.55-0.93) and >5 years was 0.82 (95% confidence interval, 0.64-1.05) after adjusting for race, age, parity, and education. Copper intrauterine device users were more likely to experience expulsion (10.2% copper intrauterine device vs 4.9% levonorgestrel intrauterine device, P < .01) over the study period and to become pregnant in the first year of use (1.6% copper intrauterine device vs 0.1% levonorgestrel intrauterine device, P < .01). We found a difference in continuation rates between levonorgestrel and copper intrauterine device users at 4 years but not at 5 years. Copper intrauterine device users were more likely

Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic devices. Final report, July 17, 1976-September 1, 1978

Energy Technology Data Exchange (ETDEWEB)

Catalano, A.; Dalal, V.; Devaney, W.E.; Fagen, E.A.; Hall, R.B.; Masi, J.V.; Warfield, G.; Wyeth, N.C.

1978-01-01

The goal of this work was to evaluate the suitability of Zn/sub 3/P/sub 2/ as a potentially low cost, high conversion efficiency material for photovoltaic devices. The important results of the research are presented and discussed. The major accomplishments of this work are: (1) the development of a vapor transport method for the growth of large single crystals; (2) the development of two methods of thin film growth: vacuum evaporation and close space transport; (3) the determination of the optical constants of Zn/sub 3/P/sub 2/ including the indices of refraction, the optical absorption coefficient, and the ultra-violet to visible reflectivity spectra; (4) a determination of the factors which influence the electrical conductivity and how these relate to the defect chemistry of Zn/sub 3/P/sub 2/; (5) measurement of the barrier height of metal-Zn/sub 3/P/sub 2/ contacts and the development of a model which relates the barrier height to the properties of the metal-semiconductor interface; (6) measurement of the minority carrier diffusion length in Zn/sub 3/P/sub 2/; (7) the development of several single and double layer anti-reflection coatings; and (8) the development of Schottky barrier photovoltaic devices employing a grid device and transparent metal film design, with conversion efficiencies as high as 6.08% (total area) or 7.6% (active area).

Resource Management for Device-to-Device Communications in Heterogeneous Networks Using Stackelberg Game

Directory of Open Access Journals (Sweden)

Yinuo He

2014-01-01

Full Text Available Device-to-device (D2D communications and femtocell systems can bring significant benefits to users’ throughput. However, the complicated three-tier interference among macrocell, femtocell, and D2D systems is a challenging issue in heterogeneous networks. As D2D user equipment (UE can cause interference to cellular UE, scheduling and allocation of channel resources and power of D2D communication need elaborate coordination. In this paper, we propose a joint scheduling and resource allocation scheme to improve the performance of D2D communication. We take UE rate and UE fairness into account by performing interference management. First, we construct a Stackelberg game framework in which we group a macrocellular UE, a femtocellular UE, and a D2D UE to form a two-leader one-follower pair. The cellular UE are leaders, and D2D UE is the follower who buys channel resources from the leaders. We analyze the equilibrium of the game and obtain solutions to the equilibrium. Second, we propose an algorithm for joint scheduling of D2D pairs based on their utility. Finally, we perform computer simulations to study the performance of the proposed scheme.

Photovoltaic device

Energy Technology Data Exchange (ETDEWEB)

Reese, Jason A; Keenihan, James R; Gaston, Ryan S; Kauffmann, Keith L; Langmaid, Joseph A; Lopez, Leonardo; Maak, Kevin D; Mills, Michael E; Ramesh, Narayan; Teli, Samar R

2017-03-21

The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

Photovoltaic device

Science.gov (United States)

Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

2015-06-02

The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

Plasma Equilibrium Control in Nuclear Fusion Devices 2. Plasma Control in Magnetic Confinement Devices 2.1 Plasma Control in Tokamaks

Science.gov (United States)

Fukuda, Takeshi

The plasma control technique for use in large tokamak devices has made great developmental strides in the last decade, concomitantly with progress in the understanding of tokamak physics and in part facilitated by the substantial advancement in the computing environment. Equilibrium control procedures have thereby been established, and it has been pervasively recognized in recent years that the real-time feedback control of physical quantities is indispensable for the improvement and sustainment of plasma performance in a quasi-steady-state. Further development is presently undertaken to realize the “advanced plasma control” concept, where integrated fusion performance is achieved by the simultaneous feedback control of multiple physical quantities, combined with equilibrium control.

High voltage semiconductor devices and methods of making the devices

Energy Technology Data Exchange (ETDEWEB)

Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

2018-01-23

A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

Development of an integrated pointing device driver for the disabled.

Science.gov (United States)

Shih, Ching-Hsiang; Shih, Ching-Tien

2010-01-01

To help people with disabilities such as those with spinal cord injury (SCI) to effectively utilise commercial pointing devices to operate computers. This study proposes a novel method to integrate the functions of commercial pointing devices. Utilising software technology to develop an integrated pointing device driver (IPDD) for a computer operating system. The proposed IPDD has the following benefits: (1) it does not require additional hardware cost or circuit preservations, (2) it supports all standard interfaces of commercial pointing devices, including PS/2, USB and wireless interfaces and (3) it can integrate any number of devices. The IPDD can be selected and combined according to their physical restriction. The IPDD is a novel method of integrating commercial pointing devices. Through IPDD, people with disabilities can choose a suitable combination of commercial pointing devices to achieve full cursor control and optimise operational performance. In contrast with previous studies, the software-based solution does not require additional hardware or circuit preservations, and it can support unlimited devices. In summary, the IPDD has the benefits of flexibility, low cost and high-device compatibility.

Toward intrinsic graphene surfaces: a systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices.

Science.gov (United States)

Cheng, Zengguang; Zhou, Qiaoyu; Wang, Chenxuan; Li, Qiang; Wang, Chen; Fang, Ying

2011-02-09

By combining atomic force microscopy and trans-port measurements, we systematically investigated effects of thermal annealing on surface morphologies and electrical properties of single-layer graphene devices fabricated by electron beam lithography on silicon oxide (SiO(2)) substrates. Thermal treatment above 300 °C in vacuum was required to effectively remove resist residues on graphene surfaces. However, annealing at high temperature was found to concomitantly bring graphene in close contact with SiO(2) substrates and induce increased coupling between them, which leads to heavy hole doping and severe degradation of mobilities in graphene devices. To address this problem, a wet-chemical approach employing chloroform was developed in our study, which was shown to enable both intrinsic surfaces and enhanced electrical properties of graphene devices. Upon the recovery of intrinsic surfaces of graphene, the adsorption and assisted fibrillation of amyloid β-peptide (Aβ1-42) on graphene were electrically measured in real time.

Process control device

International Nuclear Information System (INIS)

Hayashi, Toshifumi; Kobayashi, Hiroshi.

1994-01-01

A process control device comprises a memory device for memorizing a plant operation target, a plant state or a state of equipments related with each other as control data, a read-only memory device for storing programs, a plant instrumentation control device or other process control devices, an input/output device for performing input/output with an operator, and a processing device which conducts processing in accordance with the program and sends a control demand or a display demand to the input/output device. The program reads out control data relative to a predetermined operation target, compares and verify them with actual values to read out control data to be a practice premise condition which is further to be a practice premise condition if necessary, thereby automatically controlling the plant or requiring or displaying input. Practice presuming conditions for the operation target can be examined succesively in accordance with the program without constituting complicated logical figures and AND/OR graphs. (N.H.)

Transmission Power Adaption for Full-Duplex Relay-Aided Device-to-Device Communication

Directory of Open Access Journals (Sweden)

Hui Dun

2017-03-01

Full Text Available Device-to-device (D2D communications bring significant improvements of spectral efficiency by underlaying cellular networks. However, they also lead to a more deteriorative interference environment for cellular users, especially the users in severely deep fading or shadowing. In this paper, we investigate a relay-based communication scheme in cellular systems, where the D2D communications are exploited to aid the cellular downlink transmissions by acting as relay nodes with underlaying cellular networks. We modeled two-antenna infrastructure relays employed for D2D relay. The D2D transmitter is able to transmit and receive signals simultaneously over the same frequency band. Then we proposed an efficient power allocation algorithm for the base station (BS and D2D relay to reduce the loopback interference which is inherent due to the two-antenna infrastructure in full-duplex (FD mode. We derived the optimal power allocation problem in closed form under the independent power constraint. Simulation results show that the algorithm reduces the power consumption of D2D relay to the greatest extent and also guarantees cellular users’ minimum transmit rate. Moreover, it also outperforms the existing half-duplex (HD relay mode in terms of achievable rate of D2D.

ARAPUCA a new device for liquid argon scintillation light detection

International Nuclear Information System (INIS)

Machado, A.A.; Segreto, E.

2016-01-01

We present a totally innovative device for the detection of liquid argon scintillation light, that has been named ARAPUCA (Argon R and D Advanced Program at UniCAmp). It is composed of a passive light collector and of active devices. The latters are standard SiPMs that operate at liquid argon temperature, while the passive collector is based on a new technology, never explored in this field before. It is a photon trap, that allows to collect light with extremely high efficiency. The total detection efficiency of the device can be tuned by modifying the ratio between the area of the active devices (SiPM) and the area of the optical window. For example, it will allow to reach a detection efficiency at the level of 1% on a surface of 50 × 50 cm 2 with an active coverage of 2 × 2 cm 2 (two/three large area SiPM). It is also a cheap device, since the major part of its cost is represented by the active devices. For these reason this appears to be the ideal device for scintillation light detection in large Time Projection Chambers. With appropriate modifications it can be used also in next generation Dark Matter detectors

Efficiency Intra-Cluster Device-to-Device Relay Selection for Multicast Services Based on Combinatorial Auction

Directory of Open Access Journals (Sweden)

Yong Zhang

2015-12-01

Full Text Available In Long Term Evolution-Advanced (LTE-A networks, Device-to-device (D2D communications can be utilized to enhance the performance of multicast services by leveraging D2D relays to serve nodes with worse channel conditions within a cluster. For traditional D2D relay schemes, D2D links with poor channel condition may be the bottleneck of system sum data rate. In this paper, to optimize the throughput of D2D communications, we introduce an iterative combinatorial auction algorithm for efficient D2D relay selection. In combinatorial auctions, the User Equipments (UEs that fails to correctly receive multicast data from eNodeB (eNB are viewed as bidders that compete for D2D relays, while the eNB is treated as the auctioneer. We also give properties of convergency and low-complexity and present numerical simulations to verify the efficiency of the proposed algorithm.

Ultrasound assessment of the Essure contraceptive devices: is three-dimensional ultrasound really needed?

Science.gov (United States)

Paladini, Dario; Di Spiezio Sardo, Attilio; Coppola, Carmela; Zizolfi, Brunella; Pastore, Gaetano; Nappi, Carmine

2015-01-01

To evaluate the feasibility of 3-dimensional ultrasound (3DUS) for sonographic localization of Essure microinserts, comparing it with 2-dimensional ultrasound (2DUS) insofar as time to visualize the inserts and accuracy in determining their localization. Prospective study (Canadian Task Force classification II-2). University clinic. Twenty-seven consecutive women undergoing hysteroscopic Essure device placement. Essure microinserts were inserted in the outpatient hysteroscopy clinic following the manufacturer's recommendations, leaving from 3 to 8 loops of the inserts in the uterine cavity. In all patients, 2DUS and 3DUS were performed 3 months after the procedure. 2DUS was performed first; the device(s) were located, and their position was recorded. Then 3DUS scans were acquired, trying when possible to have both devices at least at a 45-degree angle with the insonation beam for optimal rendering on 3DUS. The OmniView method with volume contrast imaging was used to show the relationships of the microinserts within the uterine cavity when possible. To define the position of the Essure device in relation to the uterus and the salpinges, we used the classification developed by Legendre and colleagues. After sonographic evaluation all women underwent hysterosalpingography to assess the success of sterilization. Hysteroscopic insertion was successful in all patients, with 2 Essure devices placed in 25 patients and 1 device in 2 patients (due to previous salpingectomy performed because of ectopic pregnancy), for a total of 52 devices. One spontaneous late (within 3 months) expulsion of the device occurred; the device had migrated almost completely into the uterine cavity. At 3-month follow-up, all 51 correctly placed devices were easily observed at 2DUS (mean [SD] duration of the procedure, 2.25 [0.8] minutes). At 3DUS in 51 cases, the device was in perfect position (1+2+3) in 21 (41.2%), in position 2+3 in 14 (27.4%), and in position +3 in 16 (31.4%). Both microinserts

Bioorganic nanodots for non-volatile memory devices

Energy Technology Data Exchange (ETDEWEB)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil, E-mail: rgil@post.tau.ac.il [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); StoreDot LTD, 16 Menahem Begin St., Ramat Gan (Israel); Roizin, Yakov [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); TowerJazz, P.O. Box 619, Migdal HaEmek 23105 (Israel)

2013-12-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

Gas Transfer in Cellularized Collagen-Membrane Gas Exchange Devices.

Science.gov (United States)

Lo, Justin H; Bassett, Erik K; Penson, Elliot J N; Hoganson, David M; Vacanti, Joseph P

2015-08-01

Chronic lower respiratory disease is highly prevalent in the United States, and there remains a need for alternatives to lung transplant for patients who progress to end-stage lung disease. Portable or implantable gas oxygenators based on microfluidic technologies can address this need, provided they operate both efficiently and biocompatibly. Incorporating biomimetic materials into such devices can help replicate native gas exchange function and additionally support cellular components. In this work, we have developed microfluidic devices that enable blood gas exchange across ultra-thin collagen membranes (as thin as 2 μm). Endothelial, stromal, and parenchymal cells readily adhere to these membranes, and long-term culture with cellular components results in remodeling, reflected by reduced membrane thickness. Functionally, acellular collagen-membrane lung devices can mediate effective gas exchange up to ∼288 mL/min/m(2) of oxygen and ∼685 mL/min/m(2) of carbon dioxide, approaching the gas exchange efficiency noted in the native lung. Testing several configurations of lung devices to explore various physical parameters of the device design, we concluded that thinner membranes and longer gas exchange distances result in improved hemoglobin saturation and increases in pO2. However, in the design space tested, these effects are relatively small compared to the improvement in overall oxygen and carbon dioxide transfer by increasing the blood flow rate. Finally, devices cultured with endothelial and parenchymal cells achieved similar gas exchange rates compared with acellular devices. Biomimetic blood oxygenator design opens the possibility of creating portable or implantable microfluidic devices that achieve efficient gas transfer while also maintaining physiologic conditions.

All-integrated and highly sensitive paper based device with sample treatment platform for Cd2+ immunodetection in drinking/tap waters.

Science.gov (United States)

López Marzo, Adaris M; Pons, Josefina; Blake, Diane A; Merkoçi, Arben

2013-04-02

Nowadays, the development of systems, devices, or methods that integrate several process steps into one multifunctional step for clinical, environmental, or industrial purposes constitutes a challenge for many ongoing research projects. Here, we present a new integrated paper based cadmium (Cd(2+)) immunosensing system in lateral flow format, which integrates the sample treatment process with the analyte detection process. The principle of Cd(2+) detection is based on competitive reaction between the cadmium-ethylenediaminetetraacetic acid-bovine serum albumin-gold nanoparticles (Cd-EDTA-BSA-AuNP) conjugate deposited on the conjugation pad strip and the Cd-EDTA complex formed in the analysis sample for the same binding sites of the 2A81G5 monoclonal antibody (mAb), specific to Cd-EDTA but not Cd(2+) free, which is immobilized onto the test line. This platform operates without any sample pretreatment step for Cd(2+) detection thanks to an extra conjugation pad that ensures Cd(2+) complexation with EDTA and interference masking through ovalbumin (OVA). The detection and quantification limits found for the device were 0.1 and 0.4 ppb, respectively, these being the lowest limits reported up to now for metal sensors based on paper. The accuracy of the device was evaluated by addition of known quantities of Cd(2+) to different drinking water samples and subsequent Cd(2+) content analysis. Sample recoveries ranged from 95 to 105% and the coefficient of variation for the intermediate precision assay was less than 10%. In addition, the results obtained here were compared with those obtained with the well-established inductively coupled plasma emission spectroscopy (ICPES) and the analysis of certificate standard samples.

Placebo Acupuncture Devices: Considerations for Acupuncture Research

Directory of Open Access Journals (Sweden)

Dan Zhu

2013-01-01

Full Text Available Determining an appropriate control for use in acupuncture research remains one of the largest methodological challenges acupuncture researchers face. In general, acupuncture controls fall under one of two categories: (1 sham acupuncture, in which the skin is punctured with real acupuncture needles either fully at nonacupoint locations or shallowly at acupoint locations or both and (2 placebo acupuncture, which utilizes nonpenetrating acupuncture devices. In this study, we will focus on non-penetrating placebo acupuncture devices (blunted-needle and nonneedle devices that are currently available in acupuncture research. We will describe each device and discuss each device’s validation and application in previous studies. In addition, we will outline the advantages and disadvantages of these devices and highlight how the differences among placebo devices can be used to isolate distinct components of acupuncture treatment and investigate their effects. We would like to emphasize that there is no single placebo device that can serve as the best control for all acupuncture studies; the choice of an acupuncture control should be determined by the specific aim of the study.

Accuracy and reliability of wrist-cuff devices for self-measurement of blood pressure.

Science.gov (United States)

Kikuya, Masahiro; Chonan, Kenichi; Imai, Yutaka; Goto, Eiji; Ishii, Masao

2002-04-01

Self-measurement of blood pressure (BP) might offer some advantages in diagnosis and therapeutic evaluation and in patient management of hypertension. Recently, wrist-cuff devices for self-measurement of BP have gained more than one-third of the world market share. In the present study, we validated wrist-cuff devices and compared the results between wrist- and arm-cuff devices. The factors affecting the accuracy of wrist-cuff devices were also studied. The research group to assess the validity of automated blood pressure measuring device consisted of 13 institutes in Japan, which validated two wrist-cuff devices (WC-1 and WC-2) and two arm-cuff devices (AC-1 and AC-2). They used a crossover method, where the comparison was done between auscultation, by two observers by means of a double stethoscope on one arm and the device on the opposite arm or wrist. There was good inter-observer agreement for the auscultation method in each institute (systolic blood pressure (SBP), -0.1 +/- 2.8 mmHg; diastolic blood pressure (DBP), -0.1 +/- 2.6 mmHg, n = 498). The mean difference between auscultation and the device was minimal both in arm-cuff devices (mean difference for AC-1, 2.2/1.9 mmHg, n = 97 and for AC-2, 5.1/2.9 mmHg, n = 136, SBP/DBP) and wrist-cuff devices (mean difference for WC-1, -2.1/1.2 mmHg, n = 173 mmHg and for WC-2, -2.3/-5.6 mmHg, n = 92). The standard deviation of the difference (SDD) in wrist-cuff devices, however (SDD for WC-1, 9.7/7.3 mmHg and for WC-2, 10.2/8.6 mmHg), was larger than that of the arm-cuff devices (SDD for AC-1, 5.6/6.6 mmHg and for AC-2, 6.3/5.1 mmHg). Grading of AC-1 and AC-2 based on criteria of British Hypertension Society was A/A and B/A, respectively, while that of WC-1 and WC-2 was C/B and D/B, respectively. Using the same validation protocol, the results of validation for one device were divergent in each institute. In wrist-cuff devices, the BP value obtained in palmar flexion was significantly higher and that obtained in palmar

Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

International Nuclear Information System (INIS)

Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

2016-01-01

Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

Hip supporting device

DEFF Research Database (Denmark)

2011-01-01

The present invention relates to a device for limiting movements in one or more anatomical joints, such as a device for limiting movement in the human hip joint after hip replacement surgery. This is provided by a device for limiting movement in the human hip joint, said device comprising: at least...

Temporal information encoding in dynamic memristive devices

Energy Technology Data Exchange (ETDEWEB)

Ma, Wen; Chen, Lin; Du, Chao; Lu, Wei D., E-mail: wluee@eecs.umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2015-11-09

We show temporal and frequency information can be effectively encoded in memristive devices with inherent short-term dynamics. Ag/Ag{sub 2}S/Pd based memristive devices with low programming voltage (∼100 mV) were fabricated and tested. At weak programming conditions, the devices exhibit inherent decay due to spontaneous diffusion of the Ag atoms. When the devices were subjected to pulse train inputs emulating different spiking patterns, the switching probability distribution function diverges from the standard Poisson distribution and evolves according to the input pattern. The experimentally observed switching probability distributions and the associated cumulative probability functions can be well-explained using a model accounting for the short-term decay effects. Such devices offer an intriguing opportunity to directly encode neural signals for neural information storage and analysis.

A pulsed mode electrolytic drug delivery device

KAUST Repository

Yi, Ying

2015-09-14

This paper reports the design of a proof-of-concept drug delivery device that is actuated using the bubbles formed during electrolysis. The device uses a platinum (Pt) coated nickel (Ni) metal foam and a solid drug in reservoir (SDR) approach to improve the device\\'s performance. This electrochemically-driven pump has many features that are unlike conventional drug delivery devices: it is capable of pumping periodically and being refilled automatically; it features drug release control; and it enables targeted delivery. Pt-coated metal foam is used as a catalytic reforming element, which reduces the period of each delivery cycle. Two methods were used for fabricating the Pt-coated metal: sputtering and electroplating. Of these two methods, the sputtered Pt-coated metal foam has a higher pumping rate; it also has a comparable recombination rate when compared to the electroplated Pt-coated metal foam. The only drawback of this catalytic reformer is that it consumes nickel scaffold. Considering long-term applications, the electroplated Pt metal foam was selected for drug delivery, where a controlled drug release rate of 2.2 μg ± 0.3 μg per actuation pulse was achieved using 4 mW of power.

Cooling device in thermonuclear device

International Nuclear Information System (INIS)

Honda, Tsutomu.

1988-01-01

Purpose: To prevent loss of cooling effect over the entire torus structure directly after accidental toubles in a cooling device of a thermonuclear device. Constitution: Coolant recycling means of a cooling device comprises two systems, which are alternately connected with in-flow pipeways and exit pipeways of adjacent modules. The modules are cooled by way of the in-flow pipeways and the exist pipeways connected to the respective modules by means of the coolant recycling means corresponding to the respective modules. So long as one of the coolant recycling means is kept operative, since every one other modules of the torus structure is still kept cooled, the heat generated from the module put therebetween, for which the coolant recycling is interrupted, is removed by means of heat conduction or radiation from the module for which the cooling is kept continued. No back-up emergency cooling system is required and it can provide high economic reliability. (Kamimura, M.)

Photovoltaic device

Science.gov (United States)

Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

2015-09-01

The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

78 FR 68714 - Medical Devices; Ophthalmic Devices; Classification of the Scleral Plug

Science.gov (United States)

2013-11-15

... amendments), as ``preamendments devices.'' FDA classifies these devices after the Agency takes the following.... FDA-2012-N-1238] Medical Devices; Ophthalmic Devices; Classification of the Scleral Plug AGENCY: Food... scleral plugs in order to provide a reasonable assurance of safety and effectiveness of the device. The...

Intra-uterine contraceptive devices.

Science.gov (United States)

Elias, J

1985-05-01

Among the advantages of IUDs are the device's high continuation rate, the lack of systemic side effects, and the absence of a need for continual motivation to practice contraception. The effectiveness of plastic IUDs is directly proportional to their surface area, but the degree of excessive bleeding experienced is inversely related to device size. Thus, devices represent a compromise between large size for effectiveness and small size for acceptability. The optimum time to fit an IUD is during the 1st hald of the menstrual cycle. Absolute contraindications to IUD use include the presence of active pelvic inflammatory disease, undiagnosed irregular bleeding, a history of ectopic pregnancy or tubal surgery, and a distorted uteine cavity. Failure rates associated with IUD use range from 2-3% in the 1st year and then decrease. Since the main mechanism of action appears to be production of a sterile inflammatory reaction in the uterine cavity, the IUD prevents intrauterine pregnancy more effectively than ectopic pregnancy. Nonetheless, there is little evidence to suggest that IUD use actually increases the incidence of ectopic pregnancy. Resumption of fertility after IUD removal is not delayed. There is not need to change inert plastic IUDs in women who remain symptom free. The copper devices should be changed every 3-4 years. A search is under way for antifertility agents that can be incorporated into the device to reduce side effects. In general, the IUD is most suitable for older, parous women.

A synthetic multifunctional mammalian pH sensor and CO2 transgene-control device.

Science.gov (United States)

Ausländer, David; Ausländer, Simon; Charpin-El Hamri, Ghislaine; Sedlmayer, Ferdinand; Müller, Marius; Frey, Olivier; Hierlemann, Andreas; Stelling, Jörg; Fussenegger, Martin

2014-08-07

All metabolic activities operate within a narrow pH range that is controlled by the CO2-bicarbonate buffering system. We hypothesized that pH could serve as surrogate signal to monitor and respond to the physiological state. By functionally rewiring the human proton-activated cell-surface receptor TDAG8 to chimeric promoters, we created a synthetic signaling cascade that precisely monitors extracellular pH within the physiological range. The synthetic pH sensor could be adjusted by organic acids as well as gaseous CO2 that shifts the CO2-bicarbonate balance toward hydrogen ions. This enabled the design of gas-programmable logic gates, provided remote control of cellular behavior inside microfluidic devices, and allowed for CO2-triggered production of biopharmaceuticals in standard bioreactors. When implanting cells containing the synthetic pH sensor linked to production of insulin into type 1 diabetic mice developing diabetic ketoacidosis, the prosthetic network automatically scored acidic pH and coordinated an insulin expression response that corrected ketoacidosis. Copyright © 2014 Elsevier Inc. All rights reserved.

21 CFR 864.9195 - Blood mixing devices and blood weighing devices.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Blood mixing devices and blood weighing devices. 864.9195 Section 864.9195 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES HEMATOLOGY AND PATHOLOGY DEVICES Products Used In Establishments That...

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

Science.gov (United States)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

21 CFR 895.21 - Procedures for banning a device.

Science.gov (United States)

2010-04-01

... continued marketing of the device as presently labeled, is important, material, or significant in relation to the benefit to the public health from its continued marketing. (2) In determining whether a device... marketing of the device presents a substantial deception or an unreasonable and substantial risk of illness...

Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

Science.gov (United States)

Alivov, Yahya; Funke, Hans; Nagpal, Prashant

2015-07-01

Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

Mini array of quantum Hall devices based on epitaxial graphene

International Nuclear Information System (INIS)

Novikov, S.; Lebedeva, N.; Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A.

2016-01-01

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R H,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R H,2  = 2 h/e 2 was smaller than the relative standard uncertainty of the measurement (<1 × 10 −7 ) limited by the used resistance bridge.

14 CFR 101.19 - Rapid deflation device.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Rapid deflation device. 101.19 Section 101.19 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED... BALLOONS Moored Balloons and Kites § 101.19 Rapid deflation device. No person may operate a moored balloon...

18 CFR 1304.401 - Marine sanitation devices.

Science.gov (United States)

2010-04-01

... 18 Conservation of Power and Water Resources 2 2010-04-01 2010-04-01 false Marine sanitation... Miscellaneous § 1304.401 Marine sanitation devices. No person operating a commercial boat dock permitted under... equipped with a marine sanitation device (MSD) unless such MSD is in compliance with all applicable...

Sealing device

Science.gov (United States)

Garcia-Crespo, Andres Jose

2013-12-10

A sealing device for sealing a gap between a dovetail of a bucket assembly and a rotor wheel is disclosed. The sealing device includes a cover plate configured to cover the gap and a retention member protruding from the cover plate and configured to engage the dovetail. The sealing device provides a seal against the gap when the bucket assemply is subjected to a centrifugal force.

Microfluidic Device

Science.gov (United States)

Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Lin, Jeffrey Chun-Hui (Inventor); Kasdan, Harvey L. (Inventor)

2017-01-01

Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device

International Nuclear Information System (INIS)

Belaid, M.A.; Ketata, K.; Gares, M.; Marcon, J.; Mourgues, K.; Masmoudi, M.

2006-01-01

This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical characteristics is discussed with regard to physical limits for device operation. A developed 2-D structure was implemented and simulated using the physical simulator Silvaco-Atlas to explain the observed data and offer insight into the physical origin of LDMOS temperature behaviour. The temperature dependence of most important electrical parameters such as channel current I ds , threshold voltage V th and inter-electrodes capacitances (C ds , C gs ) is investigated. The temperature effects on mobility, electron concentration, electric field, current flow lines and Fermi level are taken into account. Finally, initial failure analysis is discussed

2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device

Energy Technology Data Exchange (ETDEWEB)

Belaid, M.A. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France)]. E-mail: Mohamed-ali.belaid@univ-rouen.fr; Ketata, K. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France); Gares, M. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France); Marcon, J. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France); Mourgues, K. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France); Masmoudi, M. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France)

2006-12-15

This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical characteristics is discussed with regard to physical limits for device operation. A developed 2-D structure was implemented and simulated using the physical simulator Silvaco-Atlas to explain the observed data and offer insight into the physical origin of LDMOS temperature behaviour. The temperature dependence of most important electrical parameters such as channel current I {sub ds}, threshold voltage V {sub th} and inter-electrodes capacitances (C {sub ds}, C {sub gs}) is investigated. The temperature effects on mobility, electron concentration, electric field, current flow lines and Fermi level are taken into account. Finally, initial failure analysis is discussed.

Device-to-Device Underlay Cellular Networks with Uncertain Channel State Information

KAUST Repository

Memmi, Amen

2016-01-06

Device-to-Device (D2D) communications underlying the cellular infrastructure is a technology that has recently been proposed as a promising solution to enhance cellular network capabilities: It improves spectrum utilization, overall throughput and energy efficiency while enabling new peer-to-peer and location-based applications and services. However, interference is the major challenge since the same resources are shared by both systems. Therefore, interference management techniques are required to keep the interference under control. In this work, in order to mitigate interference, we consider centralized and distributed power control algorithms in a one-cell random network model. Differently from previous works, we are assuming that the channel state information (CSI) may be imperfect and include estimation errors. We evaluate how this uncertainty impacts performances.

CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

Science.gov (United States)

Davidson, Bradley Darren

WALD fabrication technologies two generations of 2-terminal WALD NEMS switches have been developed. These devices have functional gap heights of 30-50 nm, and actuation voltages typically ranging from 3--5 Volts. Via the extension of a two terminal WALD technology novel 3-terminal WALD NEMS devices were developed. These devices have actuation voltages ranging from 1.5--3 Volts, reliabilities in excess of 2 million cycles, and have been designed to be the fundamental building blocks for WALD NEMS complementary inverters. Through the development of these devices several advancements in the modeling and design of thin-film NEMS devices were achieved. A new model was developed to better characterize pre-actuation currents commonly measured for NEMS switches with nano-scale gate-to-source gap heights. The developed model is an extension of the standard field-emission model and considers the electromechanical response, and electric field effects specific to thin-film NEMS switches. Finally, a multi-physics FEM/FD based model was developed to simulate the dynamic behavior of 2 or 3-terminal electrostatically actuated devices whose electrostatic domains have an aspect ratio on the order of 10-3. The model uses a faux-Lagrangian finite difference method to solve Laplaces equation in a quasi-statatically deforming domain. This model allows for the numerical characterization and design of thin-film NEMS devices not feasible using typical non-specialized BEM/FEM based software. Using this model several novel and feasible designs for fixed-fixed 3-terminal WALD NEMS switches capable for the construction of complementary inverters were discovered.

Supported high-risk percutaneous coronary intervention with the Impella 2.5 device the Europella registry

DEFF Research Database (Denmark)

Sjauw, Krischan D; Konorza, Thomas; Erbel, Raimund

2009-01-01

OBJECTIVES: This retrospective multicenter registry evaluated the safety and feasibility of left ventricular (LV) support with the Impella 2.5 (Abiomed Europe GmbH, Aachen, Germany) during high-risk percutaneous coronary intervention (PCI). BACKGROUND: Patients with complex or high-risk coronary...... with poor LV function. The Impella 2.5, a percutaneous implantable LV assist device, might be a superior alternative to the traditionally used intra-aortic balloon pump. METHODS: The Europella registry included 144 consecutive patients who underwent a high-risk PCI. Safety and feasibility end points.......5%. Rates of myocardial infarction, stroke, bleeding requiring transfusion/surgery, and vascular complications at 30 days were 0%, 0.7%, 6.2%, and 4.0%, respectively. CONCLUSIONS: This large multicenter registry supports the safety, feasibility, and potential usefulness of hemodynamic support with Impella 2...

77 FR 38177 - TRICARE; Off-Label Uses of Devices; Partial List of Examples of Unproven Drugs, Devices, Medical...

Science.gov (United States)

2012-06-27

... drugs, devices, and medical treatments or procedures and adding the TRICARE definition of unlabeled or... labeling. We are now modifying the definition of ``unlabeled or off-label drug'' to ``off-label use of a... reference back to the definition of the term in 199.2. ``Off-label uses of drugs and devices'' includes off...

Enhanced luminance for inorganic electroluminescent devices with a charged electret

Energy Technology Data Exchange (ETDEWEB)

Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw [Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Chen, Kuo-Feng [Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Display Technology Center/Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC (China); Chien, Yu-Han; Chang, Chin-Chia; Chuang, Meng-Ying [Display Technology Center/Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC (China)

2013-09-15

This work proposes a novel inorganic electroluminescent (IEL) device with an electric field built-in (EFBI) technique to reduce its driving voltage and enhance its luminance. The EFBI technique was performed by charging an electret comprising a silicon dioxide film at different temperatures (25–150 °C) in powder electroluminescent (PDEL) devices. The driving voltage of the EFBI-PDEL device decreased by 61.4 V (or 20.5%) under the brightness of 269 cd/m{sup 2}, and its brightness increased by 128 cd/m{sup 2} (or 47%) at ac 300 V. The efficiency of the EFBI-PDEL device significantly increased by 0.827 lm/W (or 45.5%) at ac 300 V. The proposed EFBI-PDEL device has advantages of a low-temperature process and low cost, and potential for large-area display applications. -- Highlights: • An electric-field built-in powder electroluminescent (EFBI-PDEL) device is proposed. • The EFBI technique is performed by charging an electrets. • The driving voltage of the EFBI-PDEL device decreased by 20.5%. • The brightness of the EFBI-PDEL device increased by 47%. • The efficiency of the EFBI-PDEL device increased by 45.5%.

Left Ventricular Assist Devices

Directory of Open Access Journals (Sweden)

Khuansiri Narajeenron

2017-04-01

Full Text Available Audience: The audience for this classic team-based learning (cTBL session is emergency medicine residents, faculty, and students; although this topic is applicable to internal medicine and family medicine residents. Introduction: A left ventricular assist device (LVAD is a mechanical circulatory support device that can be placed in critically-ill patients who have poor left ventricular function. After LVAD implantation, patients have improved quality of life.1 The number of LVAD patients worldwide continues to rise. Left-ventricular assist device patients may present to the emergency department (ED with severe, life-threatening conditions. It is essential that emergency physicians have a good understanding of LVADs and their complications. Objectives: Upon completion of this cTBL module, the learner will be able to: 1 Properly assess LVAD patients’ circulatory status; 2 appropriately resuscitate LVAD patients; 3 identify common LVAD complications; 4 evaluate and appropriately manage patients with LVAD malfunctions. Method: The method for this didactic session is cTBL.

Photolithographically patterened thin-film multilayer devices of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kingston, J.J.; Wellstood, F.C.; Quan, D.; Clarke, J.

1990-09-01

We have fabricated thin-film YBa 2 Cu 3 O 7-x -SrTiO 3 -YBa 2 Cu 3 O 7-x multilayer interconnect structures in which each in situ laser-deposited film is independently patterned by photolithography. In particular, we have constructed the two key components necessary for a superconducting multilayer interconnect technology, crossovers and window contacts. As a further demonstration of the technology, we have fabricated a thin-film flux transformer, suitable for use with a Superconducting QUantum Interference Device (SQUID), that includes a ten-turn input coil with 6μm linewidth. Transport measurements showed that the critical temperature was 87K and the critical current was 135 μA at 82K. 7 refs., 6 figs

Red-blue effect in Cu(In,Ga)Se2-based devices revisited

International Nuclear Information System (INIS)

Igalson, M.; Urbaniak, A.; Zabierowski, P.; Maksoud, H. Abdel; Buffiere, M.; Barreau, N.; Spiering, S.

2013-01-01

The controversial issue of a source for the fill factor losses in Cu(In,Ga)Se 2 -based solar cells observed under red light is discussed. Experimental evidence is presented that removal of the fill factor loss by blue light is accompanied by a decrease in capacitance. Similar kinetics for both effects are observed. This effect is demonstrated not only on CdS-buffered devices but also on Zn(O,S)- and In 2 S 3 -buffered cells. The explanation, supported by simulations, is based on a model of a reduction of the p + layer by holes photogenerated in the buffer. This effect might be differentiated from the effect of a photosensitive secondary barrier in the buffer-window part of the junction by a sign of the capacitance change under blue light. - Highlights: ► High-energy photons improve fill factor in Cu(In,Ga)Se 2 -based solar cells. ► The effect is demonstrated on three types of buffer layers. ► Fill factor improvement under blue light is correlated with a decrease of doping. ► p + layer is the main cause of fill factor deficiency under red light

Analysis of Ti valence states in resistive switching regions of a rutile TiO2‑ x four-terminal memristive device

Science.gov (United States)

Yamaguchi, Kengo; Takeuchi, Shotaro; Tohei, Tetsuya; Ikarashi, Nobuyuki; Sakai, Akira

2018-06-01

We have performed Ti valence state analysis of our four-terminal rutile TiO2‑ x single-crystal memristors using scanning transmission electron microscopy–electron energy loss spectroscopy (STEM–EELS). Analysis of Ti-L2,3 edge EELS spectra revealed that the electrocolored region formed by the application of voltage includes a valence state reflecting highly reduced TiO2‑ x due to the accumulation of oxygen vacancies. Such a valence state mainly exists within ∼50 nm from the crystal surface and extends along specific crystal directions. These electrically reduced surface layers are considered to directly contribute to the resistive switching (RS) in the four-terminal device. The present results add new insights into the microscopic mechanisms of the RS phenomena and should contribute to further development and improvements of TiO2‑ x based memristive devices.

Socioeconomic value of orthopedic devices: evidence and methodological challenges

Directory of Open Access Journals (Sweden)

Sorenson C

2012-10-01

Full Text Available Corinna Sorenson,1,2 Michael Drummond2,31LSE Health, London School of Economics, London, UK; 2European Health Technology Institute for Socioeconomic Research, Brussels, Belgium; 3Centre for Health Economics, University of York, York, UKAbstract: With continued technological advances in orthopedic devices and increasingly limited health care resources, greater attention will be placed on substantiating the socioeconomic value of these devices. Therefore, this study focused on a systematic review of available economic evaluations of selected orthopedic devices (n = 33 studies to assess their impact on different clinical and economic outcomes. The existing evidence suggests that they have important benefits to patients, including reduced risk of fractures, increased mobility and functioning, and enhanced quality of life, and do so cost effectively or with cost savings. However, we have identified several methodological obstacles to sufficient ascertainment of value, such as a lack of robust information on health economic outcomes and long-term evidence. We also identify areas where additional research is needed to assess more fully the value of orthopedic devices.Keywords: medical devices, orthopedics, health economic evaluation

Device for storing drilling pipes

Energy Technology Data Exchange (ETDEWEB)

Kolasinski, A; Wedrychowicz, J

1981-02-16

The patented device contains a profiled arch 14 (see figure) installed in the upper part of the drilling rig 15. On base 16 of the drilling unit, there is bin 1 which is installed on frame 2 to which it is hinge connected with the help of pin 3. On the other side, the bin rests on rollers 4 which are attached to lever 5 of lifting mechanism 6. Bin 1 is a series of parallel-arranged guides rigidly connected by transverse beams. Frame 2 contains the collapsible support 10. During operation of the device, the hydraulic lifter 6 with the help of frame 5 and rollers 4 lifts bin 1 with drilling pipes installed on it, giving it an angle of 4/sup 0/ in relation to the plane of frame 2. The collapsible support 10 is installed in a vertical position and holds bin 1. This position of bin 1 is the most suitable for movement of the vertically installed drilling pipes on the guides. The distinguishing feature of the patented device is the possibility of convenient arrangement of the drilling pipes on the guides of bin 1. Because of this, the time spent on lifting and lowering the drill apparatus is considerably reduced.

Local electric field screening in bi-layer graphene devices

Directory of Open Access Journals (Sweden)

Vishal ePanchal

2014-02-01

Full Text Available We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG and bi-layer graphene (2LG devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing amounts of 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme.

Magnetic Fe3O4@TiO2 Nanoparticles-based Test Strip Immunosensing Device for Rapid Detection of Phosphorylated Butyrylcholinesterase

Energy Technology Data Exchange (ETDEWEB)

Ge, Xiaoxiao; Zhang, Weiying; Lin, Yuehe; Du, Dan

2013-12-15

An integrated magnetic nanoparticles-based test-strip immunosensing device was developed for rapid and sensitive quantification of phosphorylated butyrylcholinesterase (BChE), the biomarker of exposure to organophosphous pesticides (OP), in human plasma. In order to overcome the difficulty in scarce availability of OP-specific antibody, here magnetic Fe3O4@TiO2 nanoparticles were used and adsorbed on the test strip through a small magnet inserted in the device to capture target OP-BChE through selective binding between TiO2 and OP moiety. Further recognition was completed by horseradish peroxidase (HRP) and anti-BChE antibody (Ab) co-immobilized gold nanoparticles (GNPs). Their strong affinities among Fe3O4@TiO2, OP-BChE and HRP/Ab-GNPs were characterized by quartz crystal microbalance (QCM), surface plasmon resonance (SPR) and square wave voltammetry (SWV) measurements. After cutting off from test strip, the resulted immunocomplex (HRP/Ab-GNPs/OP-BChE/Fe3O4@TiO2) was measured by SWV using a screen printed electrode under the test zone. Greatly enhanced sensitivity was achieved by introduction of GNPs to link enzyme and antibody at high ratio, which amplifies electrocatalytic signal significantly. Moreover, the use of test strip for fast immunoreactions reduces analytical time remarkably. Coupling with a portable electrochemical detector, the integrated device with advanced nanotechnology displays great promise for sensitive, rapid and in-filed on-site evaluation of OP poisoning.

Smart time-pulse coding photoconverters as basic components 2D-array logic devices for advanced neural networks and optical computers

Science.gov (United States)

Krasilenko, Vladimir G.; Nikolsky, Alexander I.; Lazarev, Alexander A.; Michalnichenko, Nikolay N.

2004-04-01

The article deals with a conception of building arithmetic-logic devices (ALD) with a 2D-structure and optical 2D-array inputs-outputs as advanced high-productivity parallel basic operational training modules for realization of basic operation of continuous, neuro-fuzzy, multilevel, threshold and others logics and vector-matrix, vector-tensor procedures in neural networks, that consists in use of time-pulse coding (TPC) architecture and 2D-array smart optoelectronic pulse-width (or pulse-phase) modulators (PWM or PPM) for transformation of input pictures. The input grayscale image is transformed into a group of corresponding short optical pulses or time positions of optical two-level signal swing. We consider optoelectronic implementations of universal (quasi-universal) picture element of two-valued ALD, multi-valued ALD, analog-to-digital converters, multilevel threshold discriminators and we show that 2D-array time-pulse photoconverters are the base elements for these devices. We show simulation results of the time-pulse photoconverters as base components. Considered devices have technical parameters: input optical signals power is 200nW_200μW (if photodiode responsivity is 0.5A/W), conversion time is from tens of microseconds to a millisecond, supply voltage is 1.5_15V, consumption power is from tens of microwatts to a milliwatt, conversion nonlinearity is less than 1%. One cell consists of 2-3 photodiodes and about ten CMOS transistors. This simplicity of the cells allows to carry out their integration in arrays of 32x32, 64x64 elements and more.

Additional collection devices used in conjunction with the SurePath Liquid-Based Pap Test broom device do not enhance diagnostic utility

Directory of Open Access Journals (Sweden)

O'Connor Jason C

2004-09-01

Full Text Available Abstract Background We have previously shown that use of an EC brush device in combination with the Rovers Cervex-Brush (SurePath broom offered no significant improvement in EC recovery. Here we determine if use of additional collection devices enhance the diagnostic utility of the SurePath Pap for gynecologic cytology. Methods After informed consent, 37 women ages 18–56 receiving their routine cervical examinations were randomized into four experimental groups. Each group was first sampled with the SurePath broom then immediately re-sampled with an additional collection device or devices. Group 1: Rover endocervix brush (n = 8. Group 2: Medscand CytoBrush Plus GT (n = 7. Group 3: Rover spatula + endocervix brush (n = 11. Group 4: Medscand spatula + CytoBrush Plus GT (n = 11. Results Examination of SurePath broom-collected cytology yielded the following abnormal diagnoses: atypia (n = 2, LSIL (n = 5 and HSIL (n = 3. Comparison of these diagnoses to those obtained from paired samples using the additional collection devices showed that use of a second and or third device yielded no additional abnormal diagnoses. Importantly, use of additional devices did not improve upon the abnormal cell recovery of the SurePath broom and in 4/10 cases under-predicted or did not detect the SurePath broom-collected lesion as confirmed by cervical biopsy. Finally, in 36/37 cases, the SurePath broom successfully recovered ECs. Use of additional devices, in Group 3, augmented EC recovery to 37/37. Conclusions Use of additional collection devices in conjunction with the SurePath broom did not enhance diagnostic utility of the SurePath Pap. A potential but not significant improvement in EC recovery might be seen with the use of three devices.

Radioactive waste processing device

International Nuclear Information System (INIS)

Inaguma, Masahiko; Takahara, Nobuaki; Hara, Satomi.

1996-01-01

In a processing device for filtering laundry liquid wastes and shower drains incorporated with radioactive materials, a fiber filtration device is disposed and an activated carbon filtration device is also disposed subsequent to the fiber filtration device. In addition, a centrifugal dewatering device is disposed for dewatering spent granular activated carbon in the activated carbon filtration device, and a minute filtering device is disposed for filtering the separated dewatering liquid. Filtrates filtered by the minute filtration device are recovered in a collecting tank. Namely, at first, suspended solid materials in laundry liquid wastes and shower drains are captured, and then, ingredients concerning COD are adsorbed in the activated carbon filtration device. The radioactive liquid wastes of spent granular activated carbon in the activated carbon filtration device are reduced by dewatering them by the centrifugal dewatering device, and then the granular activated carbon is subjected to an additional processing. Further, it is separated by filtration using the minute filtration device and removed as cakes. Since the filtrates are recovered to the collecting tank and filtered again, the water quality of the drains is not degraded. (N.H.)

A DNA-based nanomechanical device with three robust states.

Science.gov (United States)

Chakraborty, Banani; Sha, Ruojie; Seeman, Nadrian C

2008-11-11

DNA has been used to build a variety of devices, ranging from those that are controlled by DNA structural transitions to those that are controlled by the addition of specific DNA strands. These sequence-dependent devices fulfill the promise of DNA in nanotechnology because a variety of devices in the same physical environment can be controlled individually. Many such devices have been reported, but most of them contain one or two structurally robust end states, in addition to a floppy intermediate or even a floppy end state. We describe a system in which three different structurally robust end states can be obtained, all resulting from the addition of different set strands to a single floppy intermediate. This system is an extension of the PX-JX(2) DNA device. The three states are related to each other by three different motions, a twofold rotation, a translation of approximately 2.1-2.5 nm, and a twofold screw rotation, which combines these two motions. We demonstrate the transitions by gel electrophoresis, by fluorescence resonance energy transfer, and by atomic force microscopy. The control of this system by DNA strands opens the door to trinary logic and to systems containing N devices that are able to attain 3(N) structural states.

The synthesis, structure, and properties of 5,6,11,12-tetraarylindeno[1,2-b]fluorenes and their applications as donors for organic photovoltaic devices

KAUST Repository

Lo, Yuan-Chih; Ting, Hao-Chun; Li, Ya-Ze; Li, Yi-Hua; Liu, Shun-Wei; Huang, Kuo-Wei; Wong, Ken-Tsung

2016-01-01

The synthesis, structure, and properties of three new 5,6,11,12-tetraarylindeno[1,2-b]fluorenes are reported. The highly twisted conformations between an indeno[1,2-b]fluorene core and peripheral aryl substitutions endow these indeno[1,2-b]fluorene derivatives with good photostability for use as electron donors for vacuum-deposited photovoltaic devices. The optimized device based on a TAInF2 donor blended with C70 as an electron acceptor produces a high open-circuit voltage (>0.9 V) and a power conversion efficiency of 2.91%. This work demonstrates the first application of an indenofluorene derivative as an electron donor in organic solar cells.

The synthesis, structure, and properties of 5,6,11,12-tetraarylindeno[1,2-b]fluorenes and their applications as donors for organic photovoltaic devices

KAUST Repository

Lo, Yuan-Chih

2016-12-01

The synthesis, structure, and properties of three new 5,6,11,12-tetraarylindeno[1,2-b]fluorenes are reported. The highly twisted conformations between an indeno[1,2-b]fluorene core and peripheral aryl substitutions endow these indeno[1,2-b]fluorene derivatives with good photostability for use as electron donors for vacuum-deposited photovoltaic devices. The optimized device based on a TAInF2 donor blended with C70 as an electron acceptor produces a high open-circuit voltage (>0.9 V) and a power conversion efficiency of 2.91%. This work demonstrates the first application of an indenofluorene derivative as an electron donor in organic solar cells.

A pilot study of a new spectrophotometry device to measure tissue oxygen saturation.

Science.gov (United States)

Abel, Gemma; Allen, John; Drinnan, Michael

2014-09-01

Tissue oxygen saturation (SO2) measurements have the potential for far wider use than at present but are limited by device availability and portability for many potential applications. A device based on a small, low-cost general-purpose spectrophotometer (the Harrison device) might facilitate wider use. The aim of this study was to compare the Harrison device with a commercial instrument, the LEA O2C.Measurements were carried out on the forearm and finger of 20 healthy volunteers, using a blood pressure cuff on the upper arm to induce different levels of oxygenation. Repeatability of both devices was assessed, and the Bland-Altman method was used to assess agreement between them.The devices showed agreement in overall tracking of changes in SO2. Test-retest agreement for the Harrison device was worse than for O2C, with SD repeatability of 10.6% (forearm) or 18.6% (finger). There was no overall bias between devices, but mean (SD) difference of 1.2 (11.8%) (forearm) or 4.4 (11.5%) (finger) were outside of a clinically acceptable range.Disagreements were attributed to the stability of the Harrison probe and the natural SO2 variations across the skin surface increasing the random error. Therefore, though not equivalent to the LEA O2C, a probe redesign and averaged measurements may help establish the Harrison device as a low cost alternative.

A pilot study of a new spectrophotometry device to measure tissue oxygen saturation

International Nuclear Information System (INIS)

Abel, Gemma; Allen, John; Drinnan, Michael

2014-01-01

Tissue oxygen saturation (SO2) measurements have the potential for far wider use than at present but are limited by device availability and portability for many potential applications. A device based on a small, low-cost general-purpose spectrophotometer (the Harrison device) might facilitate wider use. The aim of this study was to compare the Harrison device with a commercial instrument, the LEA O2C. Measurements were carried out on the forearm and finger of 20 healthy volunteers, using a blood pressure cuff on the upper arm to induce different levels of oxygenation. Repeatability of both devices was assessed, and the Bland–Altman method was used to assess agreement between them. The devices showed agreement in overall tracking of changes in SO2. Test–retest agreement for the Harrison device was worse than for O2C, with SD repeatability of 10.6% (forearm) or 18.6% (finger). There was no overall bias between devices, but mean (SD) difference of 1.2 (11.8%) (forearm) or 4.4 (11.5%) (finger) were outside of a clinically acceptable range. Disagreements were attributed to the stability of the Harrison probe and the natural SO2 variations across the skin surface increasing the random error. Therefore, though not equivalent to the LEA O2C, a probe redesign and averaged measurements may help establish the Harrison device as a low cost alternative. (paper)

High heat flux device of thermonuclear device

International Nuclear Information System (INIS)

Tachikawa, Nobuo.

1994-01-01

The present invention provides an equipments for high heat flux device (divertor) of a thermonuclear device, which absorbs thermal deformation during operation, has a high installation accuracy, and sufficiently withstands for thermal stresses. Namely, a heat sink member is joined to a structural base. Armour tiles are joined on the heat sink member. Cooling pipes are disposed between the heat sink member and the armour tiles. With such a constitution, the heat sink member using a highly heat conductive material having ductility, such as oxygen free copper, the cooling pipes using a material having excellent high temperature resistance and excellent elongation, such as aluminum-dispersed reinforced copper, and the armour tiles are completely joined on the structural base. Therefore, when thermal deformation tends to cause in the high heat flux device such as a divertor, cooling pipes cause no plastic deformation because of their high temperature resistance, but the heat sink member such as a oxygen free copper causes plastic deformation to absorb thermal deformation. As a result, the high heat flux device such as a divertor causes no deformation. (I.S.)

Repairing method and device for thermonuclear device

International Nuclear Information System (INIS)

Sakurai, Akiko; Masumoto, Hiroshi; Tachikawa, Nobuo.

1995-01-01

The present invention provides a method of and a device for repairing a first wall and a divertor disposed in a vacuum vessel of a thermonuclear device. Namely, an armour tile of the divertor secured, by a brazing material, in a vacuum vessel of the thermonuclear device in which high temperature plasmas of deuterium and tritium are confined to cause fusion reaction is induction-heated or heated by microwaves to melt the brazing material. Only the armour tile is thus exchanged by its attachment/detachment. This device comprises, in the vacuum vessel, an armour tile attaching/detaching manipulator and a repairing manipulator comprising a heating manipulator having induction heating coils at the top end thereof. Induction heating coils are connected to an AC power source. According to the present invention, the armour tile is exchanged without taking the divertor out of the vacuum vessel. Therefore, cutting of a divertor cooling tube for taking the divertor out of the vacuum vessel and re-welding of the divertor for attaching it to the vacuum vessel again are no more necessary. (I.S.)

Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

Science.gov (United States)

Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

2017-08-16

The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

Proton irradiation effects in silicon devices

Energy Technology Data Exchange (ETDEWEB)

Simoen, E; Vanhellemont, J; Alaerts, A [IMEC, Leuven (Belgium); and others

1997-03-01

Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)

Semi-empirical device model for Cu{sub 2}ZnSn(S,Se){sub 4} solar cells

Energy Technology Data Exchange (ETDEWEB)

Gokmen, Tayfun; Gunawan, Oki; Mitzi, David B. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

2014-07-21

We present a device model for the hydrazine processed kesterite Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cell with a world record efficiency of ∼12.6%. Detailed comparison of the simulation results, performed using wxAMPS software, to the measured device parameters shows that our model captures the vast majority of experimental observations, including V{sub OC}, J{sub SC}, FF, and efficiency under normal operating conditions, and temperature vs. V{sub OC}, sun intensity vs. V{sub OC}, and quantum efficiency. Moreover, our model is consistent with material properties derived from various techniques. Interestingly, this model does not have any interface defects/states, suggesting that all the experimentally observed features can be accounted for by the bulk properties of CZTSSe. An electrical (mobility) gap that is smaller than the optical gap is critical to fit the V{sub OC} data. These findings point to the importance of tail states in CZTSSe solar cells.

Plasma Photonic Devices for High Energy Density Science

International Nuclear Information System (INIS)

Kodama, R.

2005-01-01

High power laser technologies are opening a variety of attractive fields of science and technology using high energy density plasmas such as plasma physics, laboratory astrophysics, material science, nuclear science including medical applications and laser fusion. The critical issues in the applications are attributed to the control of intense light and enormous density of charged particles including efficient generation of the particles such as MeV electrons and protons with a current density of TA/cm2. Now these application possibilities are limited only by the laser technology. These applications have been limited in the control of the high power laser technologies and their optics. However, if we have another device consisted of the 4th material, i.e. plasma, we will obtain a higher energy density condition and explore the application possibilities, which could be called high energy plasma device. One of the most attractive devices has been demonstrated in the fast ignition scheme of the laser fusion, which is cone-guiding of ultra-intense laser light in to high density regions1. This is one of the applications of the plasma device to control the ultra-intense laser light. The other role of the devices consisted of transient plasmas is control of enormous energy-density particles in a fashion analogous to light control with a conventional optical device. A plasma fibre (5?m/1mm), as one example of the devices, has guided and deflected the high-density MeV electrons generated by ultra-intense laser light 2. The electrons have been well collimated with either a lens-like plasma device or a fibre-like plasma, resulting in isochoric heating and creation of ultra-high pressures such as Giga bar with an order of 100J. Plasmas would be uniquely a device to easily control the higher energy density particles like a conventional optical device as well as the ultra-intense laser light, which could be called plasma photonic device. (Author)

Medical Device Safety

Science.gov (United States)

A medical device is any product used to diagnose, cure, or treat a condition, or to prevent disease. They ... may need one in a hospital. To use medical devices safely Know how your device works. Keep ...

Effective modelling of acoustofluidic devices

DEFF Research Database (Denmark)

Ley, Mikkel Wennemoes Hvitfeld

, and 3) acoustic streaming patterns in the devices considered in model 2). 1) We derive an effective model for numerical studies of hydrodynamic particle-particle interactions in microfluidic high-concentration suspensions. A suspension of microparticles placed in a microfluidic channel and influenced......, and of the momentum transfer between the particles and the suspension. 2) We derive a full 3D numerical model for the coupled acoustic fields in mm-sized water-filled glass capillaries, calculating pressure field in the liquid coupled to the displacement field of the glass channel, taking into account mixed standing...... for the acoustic field in glass capillary devices derived in 2), we make an effective model for calculating the acoustic streaming velocity in 3D. To do this, we use recent analytical results that allows calculation of the acoustic streaming field resulting from channel-wall oscillations in any direction...

Incore inspection device

International Nuclear Information System (INIS)

Ogisu, Tatsuki; Taguchi, Kosei.

1995-01-01

The device of the present invention can inspect surfaces of equipments in reactor water in a nuclear reactor in a state of atmospheric air. Namely, an inspection device is movable forwardly and backwardly in a water-proof vessel. An annular sucker with pleats is disposed to the outer side of a lid of the water-proof vessel. A television camera for an under water monitoring is disposed to the inner side of the lid of the water-proof vessel by way of a partitioning wall with lid. Transferring screws are disposed at the back and on the side of the water-proof vessel. In the device having such a constitution, (1) the inside of the water-proof vessel is at first made water-tight by closing the partitioning wall with lid, (2) the back and the side screws are operated by the guide of the underwater monitoring television camera, to transfer the water-proof vessel to the surface of the reactor core to be inspected, (3) the annular sucker with pleats is urged on the surface to be inspected by the back screw, to fix the water-proof vessel, (4) reactor water in a space of the annular sucker with pleats is discharged and replaced with air, and (5) the lid of the partition wall with lid is opened and the inspection device is disposed at a position of the underwater monitoring television camera, to inspect the surface to be inspected in a state of atmospheric air. (I.S.)

Power generating device

Energy Technology Data Exchange (ETDEWEB)

Onodera, Toshihiro

1989-05-02

The existing power generating device consisting of static components only lacks effective measures to utilize solar energy and maintain power generation, hence it is inevitable to make the device much larger and more complicated in order to utilize it as the primary power source for artificial satellites. In view of the above, in order to offer a power generating device useful for the primary power source for satellites which is simple and can keep power generation by solar energy, this invention proposes a power generating device composed of the following elements: (1) a rectangular parallelopiped No. II superconductor plate; (2) a measure to apply a magnetic field to one face of the above superconductor plate; (3) a measure to provide a temperature difference within the range between the starting temperature and the critical temperature of superconductivity to a pair of faces meeting at right angles with the face to which the magnetic field was applied by the above measure; (4) a measure to provide an electrode on each of the other pair of faces meeting at right angles with the face to which the magnetic field was applied by the above measure and form a closed circuit by connecting the each electrode above to each of a pair of electrodes of the load respectively; and (5) a switching measure which is installed in the closed circuit prepared by the above measure and shuts off the closed circuit when the direction of the electric current running the above closed circuit is reversed. 6 figs.

Novel simple insulin delivery device reduces barriers to insulin therapy in type 2 diabetes: results from a pilot study.

Science.gov (United States)

Hermanns, Norbert; Lilly, Leslie C; Mader, Julia K; Aberer, Felix; Ribitsch, Anja; Kojzar, Harald; Warner, Jay; Pieber, Thomas R

2015-05-01

The PaQ® insulin delivery system is a simple-to-use patch-on device that provides preset basal rates and bolus insulin on demand. In addition to feasibility of use, safety, and efficacy (reported elsewhere), this study analyzed the impact of PaQ on patient-reported outcomes, including barriers to insulin treatment, diabetes-related distress, and attitudes toward insulin therapy in patients with type 2 diabetes on a stable multiple daily injection (MDI) regimen. This single-center, open-label, single-arm study comprised three 2-week periods: baseline (MDI), transition from MDI to PaQ, and PaQ treatment. Validated questionnaires were administered during the baseline and PaQ treatment periods: Barriers to Insulin Treatment questionnaire (BIT), Insulin Treatment Appraisal Scale (ITAS), and Problem Areas in Diabetes scale (PAID). Eighteen patients (age 59 ± 5 years, diabetes duration 15 ± 7 years, 21% female, HbA1c 7.7 ± 0.7%) completed the questionnaires. There was a strong, significant effect of PaQ use in mean BIT total scores (difference [D] = -5.4 ± 0.7.7, P = .01, effect size [d] = 0.70). Patients perceived less stigmatization by insulin injection (D = -2.2 ± 6.2, P = .18, d = 0.35), increased positive outcome (D = 1.9 ± 6.6, P = .17, d = 0.29), and less fear of injections (1.3 ± 4.8, P = .55, d = 0.28). Mean change in ITAS scores after PaQ device use showed a nonsignificant improvement of 1.71 ± 5.63 but moderate effect size (d = 0.30, P = .14). No increase in PAID scores was seen. The results and moderate to large effects sizes suggest that PaQ device use has beneficial and clinically relevant effects to overcoming barriers to and negative appraisal of insulin treatment, without increasing other diabetes-related distress. © 2015 Diabetes Technology Society.

A review of Ga2O3 materials, processing, and devices

Science.gov (United States)

Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H.; Ren, F.; Kim, Jihyun; Tadjer, Marko J.; Mastro, Michael A.

2018-03-01

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (ɛ) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

Resource Allocation for Multicell Device-to-Device Communications in Cellular Network: A Game Theoretic Approach

Directory of Open Access Journals (Sweden)

Jun Huang

2015-08-01

Full Text Available Device-to-Device (D2D communication has recently emerged as a promising technology to improve the capacity and coverage of cellular systems. To successfully implement D2D communications underlaying a cellular network, resource allocation for D2D links plays a critical role. While most of prior resource allocation mechanisms for D2D communications have focused on interference within a single-cell system, this paper investigates the resource allocation problem for a multicell cellular network in which a D2D link reuses available spectrum resources of multiple cells. A repeated game theoretic approach is proposed to address the problem. In this game, the base stations (BSs act as players that compete for resource supply of D2D, and the utility of each player is formulated as revenue collected from both cellular and D2D users using resources. Extensive simulations are conducted to verify the proposed approach and the results show that it can considerably enhance the system performance in terms of sum rate and sum rate gain.

Design of a Simple and Modular 2-DOF Ankle Physiotherapy Device Relying on a Hybrid Serial-Parallel Robotic Architecture

Directory of Open Access Journals (Sweden)

Christos E. Syrseloudis

2011-01-01

Full Text Available The aim of this work is to propose a new 2-DOF robotic platform with hybrid parallel-serial structure and to undertake its parametric design so that it can follow the whole range of ankle related foot movements. This robot can serve as a human ankle rehabilitation device. The existing ankle rehabilitation devices present typically one or more of the following shortcomings: redundancy, large size, or high cost, hence the need for a device that could offer simplicity, modularity, and low cost of construction and maintenance. In addition, our targeted device must be safe during operation, disallow undesirable movements of the foot, while adaptable to any human foot. Our detailed study of foot kinematics has led us to a new hybrid architecture, which strikes a balance among all aforementioned goals. It consists of a passive serial kinematics chain with two adjustable screws so that the axes of the chain match the two main ankle-axes of typical feet. An active parallel chain, which consists of two prismatic actuators, provides the movement of the platform. Thus, the platform can follow the foot movements, thanks to the passive chain, and also possesses the advantages of parallel robots, including rigidity, high stiffness and force capabilities. The lack of redundancy yields a simpler device with lower size and cost. The paper describes the kinematics modelling of the platform and analyses the force and velocity transmission. The parametric design of the platform is carried out; our simulations confirm the platform's suitability for ankle rehabilitation.

Mobile communication devices causing interference in invasive and noninvasive ventilators.

Science.gov (United States)

Dang, Bao P; Nel, Pierre R; Gjevre, John A

2007-06-01

The aim of this study was to assess if common mobile communication systems would cause significant interference on mechanical ventilation devices and at what distances would such interference occur. We tested all the invasive and noninvasive ventilatory devices used within our region. This consisted of 2 adult mechanical ventilators, 1 portable ventilator, 2 pediatric ventilators, and 2 noninvasive positive pressure ventilatory devices. We operated the mobile devices from the 2 cellular communication systems (digital) and 1 2-way radio system used in our province at varying distances from the ventilators and looked at any interference they created. We tested the 2-way radio system, which had a fixed operation power output of 3.0 watts, the Global Systems for Mobile Communication cellular system, which had a maximum power output of 2.0 watts and the Time Division Multiple Access cellular system, which had a maximum power output of 0.2 watts on our ventilators. The ventilators were ventilating a plastic lung at fixed settings. The mobile communication devices were tested at varying distances starting at zero meter from the ventilator and in all operation modes. The 2-way radio caused the most interference on some of the ventilators, but the maximum distance of interference was 1.0 m. The Global Systems for Mobile Communication system caused significant interference only at 0 m and minor interference at 0.5 m on only 1 ventilator. The Time Division Multiple Access system caused no interference at all. Significant interference consisted of a dramatic rise and fluctuation of the respiratory rate, pressure, and positive end-expiratory pressure of the ventilators with no normalization when the mobile device was removed. From our experiment on our ventilators with the communication systems used in our province, we conclude that mobile communication devices such as cellular phones and 2-way radios are safe and cause no interference unless operated at very close distances of

Position measuring device

International Nuclear Information System (INIS)

Maeda, Kazuyuki; Takahashi, Shuichi; Maruyama, Mayumi

1998-01-01

The present invention provides a device capable of measuring accurate position and distance easily even at places where operator can not easily access, such as cell facilities for vitrifying radioactive wastes. Referring to a case of the vitrifying cell, an objective equipment settled in the cell is photographed by a photographing device. The image is stored in a position measuring device by way of an image input device. After several years, when the objective equipment is exchanged, a new objective equipment is photographed by a photographing device. The image is also stored in the position measuring device. The position measuring device compares the data of both of the images on the basis of pixel unit. Based on the image of the equipment before the exchange as a reference, extent of the displacement of the installation position of the equipment on the image after the exchange caused by installation error and manufacturing error is determined to decide the position of the equipment after exchange relative to the equipment before exchange. (I.S.)

78 FR 34669 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

Science.gov (United States)

2013-06-10

..., Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... importing wireless communication devices, portable music and data processing devices, and tablet computers... certain electronic devices, including wireless communication devices, portable music and data processing...

Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance

Science.gov (United States)

Ethiraj, Anita Sagadevan; Rhen, Dani; Lee, D. H.; Kang, Dae Joon; Kulkarni, S. K.

2016-05-01

The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-phenyl)-4,4'-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibited bright electroluminescence emission of 24 cd/m2 at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m2 at ˜22 Volts.

Device configuration-management system

International Nuclear Information System (INIS)

Nowell, D.M.

1981-01-01

The Fusion Chamber System, a major component of the Magnetic Fusion Test Facility, contains several hundred devices which report status to the Supervisory Control and Diagnostic System for control and monitoring purposes. To manage the large number of diversity of devices represented, a device configuration management system was required and developed. Key components of this software tool include the MFTF Data Base; a configuration editor; and a tree structure defining the relationships between the subsystem devices. This paper will describe how the configuration system easily accomodates recognizing new devices, restructuring existing devices, and modifying device profile information

Carbon Nanotube Paper-Based Electroanalytical Devices

Directory of Open Access Journals (Sweden)

Youngmi Koo

2016-04-01

Full Text Available Here, we report on carbon nanotube paper-based electroanalytical devices. A highly aligned-carbon nanotube (HA-CNT array, grown using chemical vapor deposition (CVD, was processed to form bi-layered paper with an integrated cellulose-based Origami-chip as the electroanalytical device. We used an inverse-ordered fabrication method from a thick carbon nanotube (CNT sheet to a thin CNT sheet. A 200-layered HA-CNT sheet and a 100-layered HA-CNT sheet are explored as a working electrode. The device was fabricated using the following methods: (1 cellulose-based paper was patterned using a wax printer, (2 electrical connection was made using a silver ink-based circuit printer, and (3 three electrodes were stacked on a 2D Origami cell. Electrochemical behavior was evaluated using electrochemical impedance spectroscopy (EIS and cyclic voltammetry (CV. We believe that this platform could attract a great deal of interest for use in various chemical and biomedical applications.

Progress of Terahertz Devices Based on Graphene

Institute of Scientific and Technical Information of China (English)

Mai-Xia Fu; Yan Zhang

2013-01-01

Graphene is a one-atom-thick planar sheet of sp2-hybridized orbital bonded honeycomb carbon crystal. Its gapless and linear energy spectra of electrons and holes lead to the unique carrier transport and optical properties, such as giant carrier mobility and broadband flat optical response. As a novel material, graphene has been regarded to be extremely suitable and competent for the development of terahertz (THz) optical devices. In this paper, the fundamental electronic and optic properties of graphene are described. Based on the energy band structure and light transmittance properties of graphene, many novel graphene based THz devices have been proposed, including modulator, generator, detector, and imaging device. This progress has been reviewed. Future research directions of the graphene devices for THz applications are also proposed.

Fabrication of quantum-dot devices in graphene

Directory of Open Access Journals (Sweden)

Satoshi Moriyama, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya, Shinya Uji, Maki Shimizu and Koji Ishibashi

2010-01-01

Full Text Available We describe our recent experimental results on the fabrication of quantum-dot devices in a graphene-based two-dimensional system. Graphene samples were prepared by micromechanical cleavage of graphite crystals on a SiO2/Si substrate. We performed micro-Raman spectroscopy measurements to determine the number of layers of graphene flakes during the device fabrication process. By applying a nanofabrication process to the identified graphene flakes, we prepared a double-quantum-dot device structure comprising two lateral quantum dots coupled in series. Measurements of low-temperature electrical transport show the device to be a series-coupled double-dot system with varied interdot tunnel coupling, the strength of which changes continuously and non-monotonically as a function of gate voltage.

15 CFR 740.19 - Consumer Communications Devices (CCD).

Science.gov (United States)

2010-01-01

... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Consumer Communications Devices (CCD... EXCEPTIONS § 740.19 Consumer Communications Devices (CCD). (a) Authorization. This License Exception... controllers designed for chemical processing) designated EAR99; (4) Graphics accelerators and graphics...

Understanding Collateral Evolution in Linux Device Drivers

DEFF Research Database (Denmark)

Padioleau, Yoann; Lawall, Julia Laetitia; Muller, Gilles

2006-01-01

no tools to help in this process, collateral evolution is thus time consuming and error prone.In this paper, we present a qualitative and quantitative assessment of collateral evolution in Linux device driver code. We provide a taxonomy of evolutions and collateral evolutions, and use an automated patch......-analysis tool that we have developed to measure the number of evolutions and collateral evolutions that affect device drivers between Linux versions 2.2 and 2.6. In particular, we find that from one version of Linux to the next, collateral evolutions can account for up to 35% of the lines modified in such code....

Automatic analyzing device for chlorine ion

International Nuclear Information System (INIS)

Sugibayashi, Shinji; Morikawa, Yoshitake; Fukase, Kazuo; Kashima, Hiromasa.

1997-01-01

The present invention provides a device of automatically analyzing a trance amount of chlorine ions contained in feedwater, condensate and reactor water of a BWR type power plant. Namely, zero-adjustment or span calibration in this device is conducted as follows. (1) A standard chlorine ion liquid is supplied from a tank to a mixer by a constant volume pump, and the liquid is diluted and mixed with purified water to form a standard liquid. (2) The pH of the standard liquid is adjusted by a pH adjuster. (3) The standard liquid is supplied to an electrode cell to conduct zero adjustment or span calibration. Chlorine ions in a specimen are measured by the device of the present invention as follows. (1) The specimen is supplied to a head tank through a line filter. (2) The pH of the specimen is adjusted by a pH adjuster. (3) The specimen is supplied to an electrode cell to electrically measure the concentration of the chlorine ions in the specimen. The device of the present invention can automatically analyze trance amount of chlorine ions at a high accuracy, thereby capable of improving the sensitivity, reducing an operator's burden and radiation exposure. (I.S.)

Enabling optical metrology on small 5×5μm2 in-cell targets to support flexible sampling and higher order overlay and CD control for advanced logic devices nodes

Science.gov (United States)

Salerno, Antonio; de la Fuente, Isabel; Hsu, Zack; Tai, Alan; Chang, Hammer; McNamara, Elliott; Cramer, Hugo; Li, Daoping

2018-03-01

In next generation Logic devices, overlay control requirements shrink to sub 2.5nm level on-product overlay. Historically on-product overlay has been defined by the overlay capability of after-develop in-scribe targets. However, due to design and dimension, the after development metrology targets are not completely representative for the final overlay of the device. In addition, they are confined to the scribe-lane area, which limits the sampling possibilities. To address these two issues, metrology on structures matching the device structure and which can be sampled with high density across the device is required. Conventional after-etch CDSEM techniques on logic devices present difficulties in discerning the layers of interest, potential destructive charging effects and finally, they are limited by the long measurement times[1] [2] [3] . All together, limit the sampling densities and making CDSEM less attractive for control applications. Optical metrology can overcome most of these limitations. Such measurement, however, does require repetitive structures. This requirement is not fulfilled by logic devices, as the features vary in pitch and CD over the exposure field. The solution is to use small targets, with a maximum pad size of 5x5um2 , which can easily be placed in the logic cell area. These targets share the process and architecture of the device features of interest, but with a modified design that replicates as close as possible the device layout, allowing for in-device metrology for both CD and Overlay. This solution enables measuring closer to the actual product feature location and, not being limited to scribe-lanes, it opens the possibility of higher-density sampling schemes across the field. In summary, these targets become the facilitator of in-device metrology (IDM), that is, enabling the measurements both in-device Overlay and the CD parameters of interest and can deliver accurate, high-throughput, dense and after-etch measurements for Logic

Gender Differences and Demographics and Type of Cardiac Device ...

African Journals Online (AJOL)

2018-02-07

Feb 7, 2018 ... relation between gender and cardiac device implantation indications and ... cerebrovascular disease, DM = diabetes mellitus, HT = hypertension,. PAD = peripheral arterial ... Figure 2: Trend of device types according to years.

Many-to-one blind matching for device-to-device communications

KAUST Repository

Hamza, Doha R.

2018-01-23

We formulate a two-sided many-to-one abstract matching problem defined by a collection of agreement functions. We then propose a blind matching algorithm (BLMA) to solve the problem. Our solution concept is a modified notion of pairwise stability whereby no pair of agents can e-improve their aspiration levels. We show that the random and decentralized process of BLMA converges to e-pairwise stable solutions with probability one. Next, we consider the application of BLMA in the resource and power allocation problem of device-to-device (D2D) links underlaying a cellular network. Only one resource block (RB) can be assigned to a given D2D while D2D links may occupy many RBs at any given time. We cast the D2D allocation problem within our many-to-one matching problem. We then consider a specific instance of BLMA with limited information exchange so that agents know nothing about the value, utility, of their mutual offers. Offers are simply declared and then either accepted or rejected. Despite the market and information decentralization characteristic of the BLMA, we show that agreement of aspiration levels can still be ascertained and that attaining e-pairwise stability is feasible. Numerical results further demonstrate the convergence properties of the BLMA and that the total utility attained by the BLMA is almost equal to the total utility attained by a centralized controller.

Hydrophilic MoSe2 Nanosheets as Effective Photothermal Therapy Agents and Their Application in Smart Devices.

Science.gov (United States)

Lei, Zhouyue; Zhu, Wencheng; Xu, Shengjie; Ding, Jian; Wan, Jiaxun; Wu, Peiyi

2016-08-17

A facile poly(vinylpyrrolidone) (PVP)-assisted exfoliation method is utilized to simultaneously exfoliate and noncovalently modify MoSe2 nanosheets. The resultant hydrophilic nanosheets are shown to be promising candidates for biocompatible photothermal therapy (PTT) agents, and they could also be encapsulated into a hydrogel matrix for some intelligent devices. This work not only provides novel insights into exfoliation and modification of transition metal dichalcogenide (TMD) nanosheets but also might spark more research into engineering multifunctional TMD-related nanocomposites, which is in favor of further exploiting the attractive properties of these emerging layered two-dimensional (2D) nanomaterials.

Efficient spin-filtering, magnetoresistance and negative differential resistance effects of a one-dimensional single-molecule magnet Mn(dmit2-based device with graphene nanoribbon electrodes

Directory of Open Access Journals (Sweden)

N. Liu

2017-12-01

Full Text Available We present first-principle spin-dependent quantum transport calculations in a molecular device constructed by one single-molecule magnet Mn(dmit2 and two graphene nanoribbon electrodes. Our results show that the device could generate perfect spin-filtering performance in a certain bias range both in the parallel configuration (PC and the antiparallel configuration (APC. At the same time, a magnetoresistance effect, up to a high value of 103%, can be realized. Moreover, visible negative differential resistance phenomenon is obtained for the spin-up current of the PC. These results suggest that our one-dimensional molecular device is a promising candidate for multi-functional spintronics devices.

Gauging device

International Nuclear Information System (INIS)

Qurnell, F.D.; Patterson, C.B.

1979-01-01

A gauge supporting device for measuring say a square tube comprises a pair of rods or guides in tension between a pair of end members, the end members being spaced apart by a compression member or members. The tensioned guides provide planes of reference for measuring devices moved therealong on a carriage. The device is especially useful for making on site dimensional measurements of components, such as irradiated and therefore radioactive components, that cannot readily be transported to an inspection laboratory. (UK)

Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

International Nuclear Information System (INIS)

Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Kim, Sowon; Choi, Kyung Hyun

2017-01-01

Pursuit of the most appropriate materials and fabrication methods is essential for developing a reliable, rewritable and flexible memory device. In this study, we have proposed an advanced 2D nanocomposite of white graphene (hBN) flakes embedded with graphene quantum dots (GQDs) as the functional layer of a flexible memory device owing to their unique electrical, chemical and mechanical properties. Unlike the typical sandwich type structure of a memory device, we developed a cost effective planar structure, to simplify device fabrication and prevent sneak current. The entire device fabrication was carried out using printing technology followed by encapsulation in an atomically thin layer of aluminum oxide (Al 2 O 3 ) for protection against environmental humidity. The proposed memory device exhibited attractive bipolar switching characteristics of high switching ratio, large electrical endurance and enhanced lifetime, without any crosstalk between adjacent memory cells. The as-fabricated device showed excellent durability for several bending cycles at various bending diameters without any degradation in bistable resistive states. The memory mechanism was deduced to be conductive filamentary; this was validated by illustrating the temperature dependence of bistable resistive states. Our obtained results pave the way for the execution of promising 2D material based next generation flexible and non-volatile memory (NVM) applications. (paper)

Rapid and low-cost fabrication of polystyrene-based molds for PDMS microfluidic devices using a CO2 laser

KAUST Repository

Li, Huawei; Fan, Yiqiang; Foulds, Ian G.

2011-01-01

In this article, we described a rapid and low-cost method to fabricate polystyrene molds for PDMS microfluidic devices using a CO2 laser system. It takes only several minutes to fabricate the polystyrene mold with bump pattern on top of it using a CO2 laser system. The bump pattern can be easily transferred to PDMS and fabricate microchannles as deep as 3μm on PDMS. © (2012) Trans Tech Publications, Switzerland.

Rapid and low-cost fabrication of polystyrene-based molds for PDMS microfluidic devices using a CO2 laser

KAUST Repository

Li, Huawei

2011-11-01

In this article, we described a rapid and low-cost method to fabricate polystyrene molds for PDMS microfluidic devices using a CO2 laser system. It takes only several minutes to fabricate the polystyrene mold with bump pattern on top of it using a CO2 laser system. The bump pattern can be easily transferred to PDMS and fabricate microchannles as deep as 3μm on PDMS. © (2012) Trans Tech Publications, Switzerland.

Implantable electronic medical devices

CERN Document Server

Fitzpatrick, Dennis

2014-01-01

Implantable Electronic Medical Devices provides a thorough review of the application of implantable devices, illustrating the techniques currently being used together with overviews of the latest commercially available medical devices. This book provides an overview of the design of medical devices and is a reference on existing medical devices. The book groups devices with similar functionality into distinct chapters, looking at the latest design ideas and techniques in each area, including retinal implants, glucose biosensors, cochlear implants, pacemakers, electrical stimulation t

Non-volatile memory devices with redox-active diruthenium molecular compound

International Nuclear Information System (INIS)

Pookpanratana, S; Zhu, H; Bittle, E G; Richter, C A; Li, Q; Hacker, C A; Natoli, S N; Ren, T

2016-01-01

Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al 2 O 3 /molecule/SiO 2 /Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. (paper)