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Sample records for irradiated p-type magnetic

  1. Effect of neutron irradiation on p-type silicon

    Sopko, B.

    1973-01-01

    The possibilities are discussed of silicon isotope reactions with neutrons of all energies. In the reactions, 30 Si is converted to a stable phosphorus isotope forming n-type impurities in silicon. The above reactions proceed as a result of thermal neutron irradiation. An experiment is reported involving irradiation of two p-type silicon single crystals having a specific resistance of 2000 ohm.cm and 5000 to 20 000 ohm.cm, respectively, which changed as a result of irradiation into n-type silicon with a given specific resistance. The specific resistance may be pre-calculated from the concentration of impurities and the time of irradiation. The effects of irradiation on other silicon parameters and thus on the suitability of silicon for the manufacture of semiconductor elements are discussed. (J.K.)

  2. Irradiation and annealing of p-type silicon carbide

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  3. CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

    Hoedlmoser, H; Köhler, M; Nordlund, H

    2007-01-01

    Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

  4. Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

    Tosi, C.; Bruzzi, M.; Macchiolo, A.; Scaringella, M.; Petterson, M.K.; Sadrozinski, H.F.-W.; Betancourt, C.; Manna, N.; Creanza, D.; Boscardin, M.; Piemonte, C.; Zorzi, N.; Borrello, L.; Messineo, A.

    2007-01-01

    The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1x10 15 cm -2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements

  5. TSC measurements on proton-irradiated p-type Si-sensors

    Donegani, Elena; Fretwurst, Eckhart; Garutti, Erika; Junkes, Alexandra [University of Hamburg (Germany)

    2016-07-01

    Thin n{sup +}p Si sensors are potential candidates for coping with neutron equivalent fluences up to 2.10{sup 16} n{sub eq}/cm{sup 2} and an ionizing dose in the order of a few MGy, which are expected e.g. for the HL-LHC upgrade. The aim of the present work is to provide experimental data on radiation-induced defects in order to: firstly, get a deeper understanding of the properties of hadron induced defects, and secondly develop a radiation damage model based on microscopic measurements. Therefore, the outcomes of Thermally Stimulated Current measurements on 200 μm thick Float-Zone (FZ) and Magnetic Czochralski (MCz) diodes will be shown, as a results of irradiation with 23 MeV protons and isothermal annealing. The samples were irradiated in the fluence range (0.3-1).10{sup 14} n{sub eq}/cm{sup 2}, so that the maximal temperature at which the TSC signal is still sharply distinguishable from the dark current is 200 K. In particular, special focus will be given to the defect introduction rate and to the issue of boron removal in p-type silicon. Annealing studies allow to distinguish which defects mainly contribute to the leakage current and which to the space charge, and thus correlate microscopic defects properties with macroscopic sensor properties.

  6. Variation of minority charge carrier lifetime in high-resistance p-type silicon under irradiation

    Basheleishvili, Z.V.; Garnyk, V.S.; Gorin, S.N.; Pagava, T.A.

    1984-01-01

    The minority carrier lifetime (tau) variation was studied in the process of p-type silicon bombardment with fast 8 MeV electrons. The irradiation and all measurements were carried out at room temperature. The tau quantity was measured by the photoconductivity attenuation method at a low injection level 20% measurement error; the resistivity was measured by the four-probe method (10% error). The resistivity and minority charge carrier lifetime tau are shown to increase with the exposure dose. It is supposed that as radiation dose increases, the rearrangement of the centres responsible for reducing the lifetime occurs and results in a tau increase in the material being irradiated, however the tau value observed in the original samples is not attained. The restoration of the minority carrier lifetime in p-type high-resistance silicon with a growing exposure dose might proceed due to reduction in the free carrier concentration

  7. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Jadhav, Vidya

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0> orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 1017 cm-3 were irradiated at 100 MeV Fe7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 1010-1 × 1014 ions cm-2. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet-visible-NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 1013, 5 × 1013 and 1 × 1014 ions cm-2, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 1013 ion cm-2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E1, E1 + Δ and E2 band gaps in all irradiated samples.

  8. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Jadhav, Vidya

    2015-01-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10 17 cm −3 were irradiated at 100 MeV Fe 7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10 10 –1 × 10 14 ions cm −2 . The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10 13 , 5 × 10 13 and 1 × 10 14 ions cm −2 , we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10 13 ion cm −2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E 1 , E 1 + Δ and E 2 band gaps in all irradiated samples

  9. Characteristics of accumulation of recombination centers due to irradiation of p-type Si

    Kazakevich, L.A.; Lugakov, P.F.; Filippov, I.M.

    1989-01-01

    Irradiation of Czochralski-grown p-type Si single crystals results primarily in creation of recombination-active radiation defects which give rise to a donor energy level at E v + 0.30-0.38 eV in the band gap. The ideas on the structure and mechanisms of formation of these radiation defects are continuously evolving and at present the most widely held view is that which assumes that the K centers can be carbon-oxygen-divacancy complexes or interstitial carbon-interstitial oxygen pairs. The authors investigated the recombination properties of such centers

  10. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Jadhav, Vidya, E-mail: vj1510@yahoo.com

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10{sup 17} cm{sup −3} were irradiated at 100 MeV Fe{sup 7+} ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10{sup 10}–1 × 10{sup 14} ions cm{sup −2}. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10{sup 13}, 5 × 10{sup 13} and 1 × 10{sup 14} ions cm{sup −2}, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10{sup 13} ion cm{sup −2} was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E{sub 1}, E{sub 1} + Δ and E{sub 2} band gaps in all irradiated samples.

  11. Temperature dependence of magnetoresistance in neutron-irradiated and unirradiated high resistivity p-type silicon

    Yildirim, M.; Efeoglu, H.; Abay, B.; Yogurtcu, Y.K.

    1996-01-01

    The temperature dependence of the transverse magnetoresistance in irradiated and unirradiated p-type Si is studied in the range from 120 to 290 K. The magnetoresistance coefficients for the unirradiated left angle 001 right angle and left angle 1 anti 10 right angle samples increases with decreasing sample temperature in the range from 160 to 290 K, however, this behavior is reversed below 160 K. It is proposed that this reversal is due to the double injection effect. The magnetoresistance coefficient for the irradiated left angle 001 right angle sample increases with decreasing sample temperature in the range of 120 to 290 K and is greater than that for the unirradiated left angle 001 right angle sample. This result can be explained by increased scattering due to the increased number of defects produced by irradiation. On the other hand, the magnetoresistance coefficient for the unirradiated left angle 1 anti 10 right angle sample is found to be greater than that of the unirradiated left angle 001 right angle sample. (orig.)

  12. Electrically active defects in p-type silicon after alpha-particle irradiation

    Danga, Helga T.; Auret, F. Danie; Tunhuma, Shandirai M.; Omotoso, Ezekiel; Igumbor, Emmanuel; Meyer, Walter E.

    2018-04-01

    In this work, we investigated the defects introduced when boron (B) doped silicon (Si) was irradiated by making use of a 5.4 MeV americium (Am) 241 foil radioactive source with a fluence rate of 7×106 cm-2 s-1 at room temperature. Deep level transient spectroscopy (DLTS) and Laplace-DLTS measurements were used to investigate the electronic properties of the introduced defects. After exposure at a fluence of 5.1×1010 cm-2, the energy levels of the hole traps measured were: H(0.10), H(0.16), H(0.33) and H(0.52) The defect level H(0.10) was tri-vacancy related. H(0.33) was identified as the interstitial carbon (Ci) related defect which was a result of radiation induced damage. H(0.52) was a B-related defect. Explicit deductions about the origin of H(0.16) have not yet been achieved.

  13. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

    Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

    1989-01-01

    Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

  14. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-01-01

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

  15. Studies of defects in neutron-irradiated p-type silicon by admittance measurements of n+-p diodes

    Tokuda, Y.; Usami, A.

    1978-01-01

    Defects introduced in p-type silicon by neutron irradiation were studied by measuring the admittance of n + -p diodes. It was shown that the energy levels and capture cross sections estimated from the temperature dependence of the admittance had some uncertainty due to the temperature dependence of the concentration of free carriers in the bulk and the high-frequency-junction capacitance. So, we presented the method of determination of the energy levels, capture cross sections, and concentrations of defects from the frequency dependence of the admittance. This method consists of the measurements of G/ω and C as a function of frequency. From this method, assuming that capture cross sections are independent of temperature, the energy levels of E/sub v/+0.16 and E/sub v/+0.36 eV were obtained. For these defects, the calculated values of the hole capture cross section were 2.4 x 10 -14 and 3.7 x 10 -14 cm 2 , respectively. Comparing with other published data, the energy level of E/sub v/+0.36 eV was found to be correlated with the divacancy

  16. Gamma-Ray Irradiation Effects on the Characteristics of New Material P Type 6H-SiC Ni-Schottky Diodes (Application For Nuclear Fuel Facilities)

    U-Sudjadi; T-Ohshima, N. Iwamoto; S-Hishiki; N-Iwamoto, K. Kawano

    2007-01-01

    Effects of gamma-ray irradiation on electrical characteristics of new material p type 6H-SiC Ni-Schottky diodes were investigated. Ni Schottky diodes fabricated on p type 6H-SiC epi-layer were irradiated with gamma-rays at RT. The electrical characteristics of the diodes were evaluated before and after irradiation. The value of the on-resistance does not change up to 1 MGy, and the value increases with increasing absorbed dose above 1 MGy. For n factor, no significant increase is observed below 500 kGy, however, the value increases above 500 kGy. Schottky Barrier Height (SBH) decreases with increasing absorbed dose. Leakage current tends to increase due to irradiation. (author)

  17. Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

    Makarenko, L F; Korshunov, F P; Murin, L I; Moll, M

    2009-01-01

    It has been revealed that self-interstitials formed under low intensity electron irradiationin high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkelpair sinsilicon can be stable at temperatures of about or higher than 100K. A broad DLTS peak with activation energy of 0.14–0.17eV can be identified as related to Frenkel pairs. This peak anneals out at temperatures of 120 140K. Experimental evidences are presented that be coming more mobile under forwardcurrent injection the self-interstitials change their charge state to a less positive one.

  18. P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environment

    AUTHOR|(CDS)2084505

    2015-01-01

    In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to $1.5\\times10^{15} n_{eq}/cm^{2}$ corresponding to $3000 fb^{-1}$ after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20~cm${<}R{<}$110~cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolatio...

  19. Annealing studies of irradiated p-type sensors designed for the upgrade of ATLAS Phase-II Strip Tracker

    Wiik-Fuchs, Liv Antje Mari; The ATLAS collaboration

    2018-01-01

    The upgrade for the High Luminosity LHC in 2025 will challenge the silicon strip detector performance with high fluence and long operation time. Sensors have been designed and tests on charge collection and electrical performance have been carried out in order to evaluate their behavior. Besides that, it is important to understand and predict the long-term evolution of the sensor properties. In this work, we present detailed studies on the annealing behavior of ATLAS12 strip sensors designed by the ITK Strip Sensor Working Group and irradiated from 510^13 to 210^15 n_eq/cm^2. Systematic charge collection, leakage current and impedance measurements have been carried out during the annealing time at 23 and 60°C until break-down or the appearance of charge multiplication. Sensors showing charge multiplication have been then kept at high voltage for a long time in order to monitor their stability. The difference in the annealing behavior between the two temperatures has been analyzed. From the impedance measurem...

  20. Annealing Studies of irradiated p-type Sensors Designed for the Upgrade of ATLAS Phase-II Strip Tracker

    Wiik-Fuchs, Liv Antje Mari; The ATLAS collaboration

    2018-01-01

    The upgrade for the High Luminosity LHC in 2025 will challenge the silicon strip detector performance with high fluence and long operation time. Sensors have been designed and tests on charge collection and electrical performance have been carried out in order to evaluate their behaviour. Besides that, it is important to understand and predict the long-term evolution of the sensor prop- erties. In this work, detailed studies on the annealing behaviour of ATLAS12 strip sensors designed by the ITK Strip Sensor Working Group and irradiated from 5 × 1013 neqcm−2 to 2 × 1015 neqcm−2 are presented. Systematic charge collection, leakage current and impedance measurements have been carried out during the annealing time at 23 and 60◦C until break-down or the appearance of charge multiplication. Sensors showing charge multiplication have been then kept at high voltage for a long time in order to monitor their stability. The difference in the annealing behaviour between the two temperatures has been analysed and...

  1. Performance of p-type micro-strip detectors after irradiation to $7.5x10^{15} p/cm^{2}$

    Allport, Philip P; Lozano-Fantoba, Manuel; Sutcliffe, Peter; Velthuis, J J; Vossebeld, Joost Herman

    2004-01-01

    Exploiting the advantages of reading out segmented silicon from the n-side, we have produced test detectors with LHC pitch but 1 cm long strips which even after proton irradiation at the CERN PS to 7.5*10 /sup 15/ cm/sup -2/ show signal to noise greater than 8:1 using LHC speed electronics. This dose exceeds by a factor of 2 that required for a replacement of the ATLAS semiconductor tracker to cope with an upgrade of the LHC to a Super-LHC with 10 times greater luminosity. These detectors were processed on p-type starting material of resistivity ~ 2 k Omega cm and, unlike n-in-n designs, only required single-sided processing. Such technology should therefore provide a relatively inexpensive route to replacing the central tracking at both ATLAS and CMS for Super-LHC. The shorter strip length is required to limit the noise. Even at these extreme doses 30% of the non-irradiated signal is seen. This 7000e/sup -/ signal (in 280 mu m thick sensors) is very competitive with the post irradiation performance of other,...

  2. Hole-capture properties of the electron-irradiation-induced deep-level H5 in p-type InP: A charge-controlled bistable model

    Bretagnon, T.; Bastide, G.; Rouzeyre, M.

    1989-01-01

    The electron-induced irradiated defect H 5 in Zn-doped p-type InP is an unusual hole trap, since its temperature-independent weak-hole capture cross section, σ c ∼10 -21 cm 2 , is 6 orders of magnitude lower than the value obtained from thermal-emission rates. We present a charge-controlled bistable configuration-coordinate diagram that explains this large difference and accounts for the optical-absorption properties. In addition, a microscopic D In n+ -Zn - defect, made by pairing under electrostatic attraction of the ionized acceptor Zn - and of a positively charged primitive defect D In n+ of the In sublattice, is tentatively proposed as a plausible complex at the origin of H 5

  3. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

    Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

    2015-01-01

    The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

  4. Tailoring magnetism by light-ion irradiation

    Fassbender, J; Ravelosona, D; Samson, Y

    2004-01-01

    Owing to their reduced dimensions, the magnetic properties of ultrathin magnetic films and multilayers, e.g. magnetic anisotropies and exchange coupling, often depend strongly on the surface and interface structure. In addition, chemical composition, crystallinity, grain sizes and their distribution govern the magnetic behaviour. All these structural properties can be modified by light-ion irradiation in an energy range of 5-150 keV due to the energy loss of the ions in the solid along their trajectory. Consequently the magnetic properties can be tailored by ion irradiation. Similar effects can also be observed using Ga + ion irradiation, which is the common ion source in focused ion beam lithography. Examples of ion-induced modifications of magnetic anisotropies and exchange coupling are presented. This review is limited to radiation-induced structural changes giving rise to a modification of magnetic parameters. Ion implantation is discussed only in special cases. Due to the local nature of the interaction, magnetic patterning without affecting the surface topography becomes feasible, which may be of interest in applications. The main patterning technique is homogeneous ion irradiation through masks. Focused ion beam and ion projection lithography are usually only relevant for larger ion masses. The creation of magnetic feature sizes below 50 nm is shown. In contrast to topographic nanostructures the surrounding area of these nanostructures can be left ferromagnetic, leading to new phenomena at their mutual interface. Most of the material systems discussed here are important for technological applications. The main areas are magnetic data storage applications, such as hard magnetic media with a large perpendicular magnetic anisotropy or patterned media with an improved signal to noise ratio and magnetic sensor elements. It will be shown that light-ion irradiation has many advantages in the design of new material properties and in the fabrication technology of

  5. Magnetism by interfacial hybridization and p-type doping of MoS2 in Fe4N/MoS2 superlattices: A first-principles study

    Feng, Nan

    2014-03-26

    Magnetic and electronic properties of Fe4N(111)/MoS 2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) FeIFe II-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between FeI/Fe II and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe I. For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices. © 2014 American Chemical Society.

  6. Magnetism by interfacial hybridization and p-type doping of MoS2 in Fe4N/MoS2 superlattices: A first-principles study

    Feng, Nan; Mi, Wenbo; Cheng, Yingchun; Guo, Zaibing; Schwingenschlö gl, Udo; Bai, Haili

    2014-01-01

    Magnetic and electronic properties of Fe4N(111)/MoS 2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) FeIFe II-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between FeI/Fe II and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe I. For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices. © 2014 American Chemical Society.

  7. Magnetism by interfacial hybridization and p-type doping of MoS(2) in Fe(4)N/MoS(2) superlattices: a first-principles study.

    Feng, Nan; Mi, Wenbo; Cheng, Yingchun; Guo, Zaibing; Schwingenschlögl, Udo; Bai, Haili

    2014-03-26

    Magnetic and electronic properties of Fe4N(111)/MoS2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) Fe(I)Fe(II)-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between Fe(I)/Fe(II) and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe(I). For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices.

  8. Study on 150μm thick n- and p-type epitaxial silicon sensors irradiated with 24 GeV/c protons and 1 MeV neutrons

    Kaska, Katharina; Moll, Michael; Fahrer, Manuel

    2010-01-01

    A study on 150μm epitaxial (EPI) n- and p-type silicon diodes irradiated with neutrons up to 8x10 15 n/cm 2 and protons up to 1.7x10 15 p/cm 2 has been performed by means of CV/IV, charge collection efficiency (CCE) and transient current technique (TCT) measurements. It is found that the effective space charge density increases three times faster after proton than after neutron irradiation with a slightly higher effective space charge generation rate for n-type material compared to p-type material. A drop in charge collection efficiency already at fluences of 1x10 12 n eq /cm 2 can be seen in n-type material, but is absent in p-type material. TCT measurements show space charge sign inversion from positive to negative charge in n-type material after neutron irradiation and from negative to positive space charge in p-type material after proton irradiation. No difference was found in the response of diodes manufactured by different producers out of the same wafer material.

  9. Hierarchical heterostructures of p-type bismuth oxychloride nanosheets on n-type zinc ferrite electrospun nanofibers with enhanced visible-light photocatalytic activities and magnetic separation properties.

    Sun, Yucong; Shao, Changlu; Li, Xinghua; Guo, Xiaohui; Zhou, Xuejiao; Li, Xiaowei; Liu, Yichun

    2018-04-15

    P-type bismuth oxychloride (p-BiOCl) nanosheets were uniformly grown on n-type zinc ferrite (n-ZnFe 2 O 4 ) electrospun nanofibers via a solvothermal technique to form hierarchical heterostructures of p-BiOCl/n-ZnFe 2 O 4 (p-BiOCl/n-ZnFe 2 O 4 H-Hs). The density and loading amounts of the BiOCl nanosheets with exposed {0 0 1} facets were easily controlled by adjusting the reactant concentration in the solvothermal process. The p-BiOCl/n-ZnFe 2 O 4 H-Hs exhibited enhanced visible-light photocatalytic activities for the degradation of Rhodamine B (RhB). The apparent first-order rate of the p-BiOCl/n-ZnFe 2 O 4 H-Hs and its normalized constant were about 12.6- and 8-fold higher than pure ZnFe 2 O 4 nanofibers. This suggests that both the improved charge separation efficiency from the uniform p-n heterojunctions and the enlarged active surface sites from the hierarchical structures increase the photocatalytic performances. Furthermore, the p-BiOCl/n-ZnFe 2 O 4 H-Hs could be efficiently separated from the solution with an external magnetic field via the ferromagnetic behavior of ZnFe 2 O 4 nanofibers. The magnetic p-BiOCl/n-ZnFe 2 O 4 H-Hs with enhanced visible-light photocatalytic performances might have potential applications in water treatment. Copyright © 2018. Published by Elsevier Inc.

  10. The study of 1 MeV electron irradiation induced defects in N-type and P-type monocrystalline silicon

    Babaee, S.; Ghozati, S. B.

    2017-12-01

    Despite extensive use of GaAs cells in space, silicon cells are still being used. The reason is that not only they provide a good compromise between efficiency and cost, but also some countries do not have the required technology for manufacturing GaAs. Behavior of a silicon cell under any levels of charged particle irradiation could be deducted from the results of a damage equivalent 1 MeV electron irradiation using the NASA EQflux open source software package. In this paper for the first time, we have studied the behavior of a silicon cell before and after 1 MeV electron irradiation with 1014, 1015 and 1016 electrons-cm-2 fluences, using SILVACO TCAD simulation software package. Simulation was carried out at room temperature under AM0 condition. Results reveal that open circuit voltage and efficiency decrease after irradiation while short circuit current shows a slight increase in the trend around 5 × 1016 electrons-cm-2, and short circuit current loss plays an important role on efficiency changes rather than open circuit voltage.

  11. Magnetic circular dichroism study of electron-irradiation induced defects in InP

    Gislason, H.P.

    1989-01-01

    A strong magnetic circular dichroism (MCD) absorption band centered at 1.07 eV in electron irradiated InP is reported. Temperature and magnetic field dependence of the signal reveal that the centre giving rise to this band is a spin triplet. By simulating neutral and reverse bias conditions of junction measurements through a careful choice of irradiation dose and starting material, the MCD band is shown to have an annealing behaviour closely resembling that of the majority carrier traps which control the Fermi level position in n- and p-type InP. The 1.07 eV MCD band represents the first magneto-optical signal connected with this family of complex irradiation-induced defects in InP. (author) 19 refs., 5 figs., 1 tab

  12. Magnetic patterning by means of ion irradiation and implantation

    Fassbender, J.; McCord, J.

    2008-01-01

    A pure magnetic patterning by means of ion irradiation which relies on a local modification of the magnetic anisotropy of a magnetic multilayer structure has been first demonstrated in 1998. Since then also other magnetic properties like the interlayer exchange coupling, the exchange bias effect, the magnetic damping behavior and the saturation magnetization to name a few have also been demonstrated to be affected by ion irradiation or ion implantation. Consequently, all these effects can be used if combined with a masking technique or employing direct focused ion beam writing for a magnetic patterning and thus an imprinting of an artificial magnetic domain structure, which subsequently modifies the integral magnetization reversal behavior or the magnetization dynamics of the film investigated. The present review will summarize how ion irradiation and implantation can affect the magnetic properties by means of structural modifications. The main part will cover the present status with respect to the pure magnetic patterning of micro- and nano structures

  13. Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation

    Gupta, Pranav; Dutta, Titas; Mal, Siddhartha; Narayan, Jagdish [Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606 (United States)

    2012-01-01

    We report the systematic changes in structural, electrical, and optical properties of NiO thin films on c-sapphire introduced by nanosecond ultraviolet excimer laser pulses. Epitaxial nature of as deposited NiO was determined by x-ray diffraction phi scans and transmission electron microscopy (TEM) and it was established that NiO film growth takes place with twin domains on sapphire where two types of domains have 60 deg. in-plane rotation with respect to each other about the [111] growth direction. We determined that at pulsed laser energy density of 0.275 J/cm{sup 2}, NiO films exhibited conversion from p-type semiconducting to n-type conductive behavior with three orders of magnitude decrease in resistivity, while maintaining its cubic crystal structure and good epitaxial relationship. Our TEM and electron-energy-loss spectroscopy studies conclusively ruled out the presence of any Ni clustering or precipitation due to the laser treatment. The laser-induced n-type carrier transport and conductivity enhancement were shown to be reversible through subsequent thermal annealing in oxygen. This change in conductivity behavior was correlated with the nonequilibrium concentration of laser induced Ni{sup 0}-like defect states.

  14. Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

    Khoverko Yu. N.

    2010-10-01

    Full Text Available The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.

  15. Tests on irradiated magnet-insulator materials

    Schmunk, R.E.; Miller, L.G.; Becker, H.

    1983-01-01

    Fusion-reactor coils, located in areas where they will be only partially shielded, must be fabricated from materials which are as resistant to radiation as possible. They will probably incorporate resistive conductors with either water or cryogenic cooling. Inorganic insulators have been recommended for these situations, but the possibility exists that some organic insulators may be usuable as well. Results were previously reported for irradiation and testing of three glass reinforced epoxies: G-7, G-10, and G-11. Thin disks of these materials, nominally 0.5 mm thick by 11.1 mm diameter, were tested in compressive fatigue, a configuration and loading which represents reasonably well the magnet environment. In that work G-10 was shown to withstand repeated loading to moderately high stress levels without failure, and the material survived better at liquid nitrogen temperature than at room temperature

  16. Optical properties of the main electron-irradiation-induced defects in p-type InP: Comparison with calculations for the isolated and acceptor-paired phosphorus vacancy

    Bretagnon, T.; Bastide, G.; Rouzeyre, M.; Delerue, C.; Lannoo, M.

    1990-01-01

    Optical capacitance spectroscopy and thermal annealing of defects have been used to study both the electron traps EP 1 ,E 11 and the dominant hole traps (H 3 -H 4 -H 4 ' ) produced by low-energy electron irradiation in Zn-doped p-type InP. This shows that the 1.1-eV onset in the photoionization cross sections (PCS's) previously attributed to (H 3 -H 4 ) is actually due to the unrelated electron trap EP 1 . The true PCS's σ p 0 of (H 3 ,H 4 ) are compared with PCS tight-binding Green's function calculations to test the earlier proposal that the (H 2 -H 3 -H 4 -H 4 ' ,E 11 ) series might arise from different states of (V P -Zn) complexes. The model yields an effective agreement as concerns both the energy location of the hole-levels series in the forbidden gap and the vanishingly small contribution to the PCS's of the four equivalent L valence-band minima. The proposal that E 11 might correspond to the ionization of an e state of the V P -Zn complex also agrees with the experimental observation of both optical transitions to the valence band and to the conduction band but cannot account for the midgap position of E 11

  17. Stored energy in fusion magnet materials irradiated at low temperatures

    Chaplin, R.L.; Kerchner, H.R.; Klabunde, C.E.; Coltman, R.R.

    1989-08-01

    During the power cycle of a fusion reactor, the radiation reaching the superconducting magnet system will produce an accumulation of immobile defects in the magnet materials. During a subsequent warm-up cycle of the magnet system, the defects will become mobile and interact to produce new defect configurations as well as some mutual defect annihilations which generate heat-the release of stored energy. This report presents a brief qualitative discussion of the mechanisms for the production and release of stored energy in irradiated materials, a theoretical analysis of the thermal response of irradiated materials, theoretical analysis of the thermal response of irradiated materials during warm-up, and a discussion of the possible impact of stored energy release on fusion magnet operation 20 refs

  18. Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation

    Yuan, Ye; Amarouche, Teyri; Xu, Chi; Rushforth, Andrew; Böttger, Roman; Edmonds, Kevin; Campion, Richard; Gallagher, Bryan; Helm, Manfred; Jürgen von Bardeleben, Hans; Zhou, Shengqiang

    2018-04-01

    In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane [0 0 1] to in-plane [1 0 0] direction is achieved. From the application point of view, our work presents a novel avenue in modifying the uniaxial magnetic anisotropy in GaMnAsP with the possibility of lateral patterning by using lithography or focused ion beam.

  19. Neutron irradiation effects on magnetic properties of some Heusler alloys

    Onodera, Hideya; Shinohara, Takeshi; Yamamoto, Hisao; Watanabe, Hiroshi

    1975-01-01

    The neutron irradiation effects were studied with measurements of temperature dependence of magnetization in ordered and disordered Heusler alloys. The irradiation was carried out in JMTR with a total flux of fast neutrons of 10 20 nvt. Fully ordered Cu 2 MnIn, partially ordered Cu 2 MnAl and completely disordered Cu 2 MnSn were prepared with various temperature treatments. The magnetization-temperature curves of each specimen were measured before and after irradiation. In the irradiated Cu 2 MnIn, the disordering by the irradiation gave rise to a decrease of magnetization, and the temperature dependence of magnetization showed that the disordered region contained various regions with different degrees of disorder. For the distribution of the disordered region, the calculation based on the theory of temperature spike by Seitz and Koekler gave a feasible result that a disordered region comprised a central core with a radius of 5.4 A which was completely disordered and a periphery of 3.3 A thickness which was partially disordered. From the magnetization-temperature curves of Cu 2 MnAl, it was considered that the disordered regions induced by the irradiation had different properties from those induced by the heat treatment. The former were the localized and comprised regions corresponding to various degrees of disorder, while the latter spread spatially in a wide range with a certain degree of disorder. The ordering by enhanced diffusion occurred simultaneously to an extent comparable to the disordering, and so it played an important role in the magnetization in the partially disordered Cu 2 MnAl. In the disordered Cu 2 MnSn, however, the ordering effect was very small. It is supposed to be difficult for the A2 structure to transform into the L2 1 structure by the enhanced diffusion. (auth.)

  20. Effect of neutron and gamma irradiation on magnetic bubble memories

    Cambou, B.

    1981-06-01

    Many years of research preceeded the introduction of magnetic bubble memories (M.B.M.) into the memory components market. They are used as bulk storage memories principally for their non volatile characteristics under irradiation. A physical and technological description of MBM is given in the first part of the text together with the results of work on their vulnerability when subjected to irradiation. Permanent damage caused by neutrons and gamma radiation on thin magnetic layers is then studied. A theoretical analysis on the stability of bubbles based on the results of pulsed laser experiments is given. The stability of the information stored in a commercially available MBM subjected to neutron and gamma irradiation (MBM - TIB 203 of 92 kBits, Texas) is described in the last part of the text. The vulnerability thresholds determined for the MBM are too high for them to be used in a radioactive environment with an improved electronic control system [fr

  1. Magnetic properties of point defects in proton irradiated diamond

    Makgato, T.N., E-mail: Thuto.Makgato@students.wits.ac.za [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Sideras-Haddad, E. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa); Ramos, M.A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Departamento de Fisica de la Materia Condensada, Condensed Matter Physics Center (IFIMAC) and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid (Spain); García-Hernández, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid (Spain); Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Shrivastava, S. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Erasmus, R. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa)

    2016-09-01

    We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ{sub eff}~(0.1–0.2)μ{sub B}. No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ{sub eff}~(0.1–0.2)μ{sub B}. • No evidence of long range magnetic ordering is observed.

  2. Magnetic properties of point defects in proton irradiated diamond

    Makgato, T.N.; Sideras-Haddad, E.; Ramos, M.A.; García-Hernández, M.; Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A.; Shrivastava, S.; Erasmus, R.

    2016-01-01

    We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ eff ~(0.1–0.2)μ B . No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ eff ~(0.1–0.2)μ B . • No evidence of long range magnetic ordering is observed.

  3. P -type transparent conducting oxides

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-01-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

  4. Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low-Energy Electron Beam Irradiation

    Amano, Hiroshi

    2015-12-01

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.

  5. Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).

    Amano, Hiroshi

    2015-06-26

    This Review is a personal reflection on the research that led to the development of a method for growing gallium nitride (GaN) on a sapphire substrate. The results paved the way for the development of smart display systems using blue LEDs. The most important work was done in the mid to late 80s. The background to the author's work and the process by which the technology that enables the growth of GaN and the realization of p-type GaN was established are reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

    Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

    2015-06-15

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. High temperature superconductors for fusion magnets -influence of neutron irradiation

    Chudy, M.; Eisterer, M.; Weber, H. W.

    2010-01-01

    In this work authors present the results of study of influence of neutron irradiation of high temperature superconductors for fusion magnets. High temperature superconductors (type of YBCO (Yttrium-Barium-Copper-Oxygen)) are strong candidates to be applied in the next step of fusion devices. Defects induced by fast neutrons are effective pinning centres, which can significantly improve critical current densities and reduce J c anisotropy. Due to induced lattice disorder, T c is reduced. Requirements for ITER (DEMO) are partially achieved at 64 K.

  8. Design practice and operational experience of highly irradiated, high-performance normal magnets

    Schultz, J.H.

    1982-09-01

    The limitations of high performance magnets are discussed in terms of mechanical, temperature, and electrical limits. The limitations of magnets that are highly irradiated by neutrons, gamma radiation, or x radiation are discussed

  9. Effect of {gamma}-ray irradiation on the magnetic properties of NdFeB and Fe-Cr-Co permanent magnets

    Gao, R.S. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)]. E-mail: zhenl@hit.edu.cn; Li, G.A. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xu, C.Y. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Shao, W.Z. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2006-07-15

    The effect of {gamma}-ray irradiation on the magnetic properties of NdFeB and Fe-Cr-Co permanent magnets has been investigated. The magnetic flux loss of two kinds of magnets before and after irradiation was measured. Results show that the effect of {gamma}-ray irradiation on the magnetic properties of sintered NdFeB is not so obvious as that on Fe-Cr-Co magnet. Irradiation-induced damage from {gamma}-ray for the Fe-Cr-Co magnets was characterized for the first time. The decline of permanent magnetic properties of Fe-Cr-Co magnet induced by {gamma}-ray irradiation is reversible except for the maximum energy product (BH){sub max}. The difference of coercivity mechanism between these two kinds of permanent magnets is responsible for the different dependence of magnetic properties loss induced by {gamma}-ray irradiation.

  10. Magnetic properties of a stainless steel irradiated with 6 MeV Xe ions

    Xu, Chaoliang; Liu, Xiangbing; Qian, Wangjie; Li, Yuanfei

    2017-11-01

    Specimens of austenitic stainless steel were irradiated with 6 MeV Xe ions at room temperature to 2, 7, 15 and 25 dpa. The vibrating sample magnetometer (VSM), grazing incidence X-ray diffraction (GIXRD) and positron annihilation lifetime spectroscopy (PLS) were carried out to analysis the magnetic properties and microstructural variations. The magnetic hysteresis loops indicated that higher irradiation damage causes more significant magnetization phenomenon. The equivalent saturated magnetization Mes and coercive force Hc were obtained from magnetic hysteresis loops. It is indicated that the Mes increases with irradiation damage. While Hc increases first to 2 dpa and then decreases continuously with irradiation damage. The different contributions of irradiation defects and ferrite precipitates on Mes and Hc can explain these phenomena.

  11. Irradiation capsule for testing magnetic fusion reactor first-wall materials at 60 and 2000C

    Conlin, J.A.

    1985-08-01

    A new type of irradiation capsule has been designed, and a prototype has been tested in the Oak Ridge Research Reactor (ORR) for low-temperature irradiation of Magnetic Fusion Reactor first-wall materials. The capsule meets the requirements of the joint US/Japanese collaborative fusion reactor materials irradiation program for the irradiation of first-wall fusion reactor materials at 60 and 200 0 C. The design description and results of the prototype capsule performance are presented

  12. Effects of proton irradiation on electronic structure of NdFeB permanent magnets

    Yang, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)], E-mail: lzhen@hit.edu.cn; Xu, C.Y.; Sun, X.Y.; Shao, W.Z. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2009-09-15

    Effects of proton irradiation on electronic structure and atomic local structure of N35EH-type NdFeB permanent magnet were investigated by soft X-ray absorption spectrometry and Moessbauer spectrometry. The local coordination environment of Fe atoms changes after proton irradiation, and the average hyperfine field H{sub in} of the magnets decreases from 288.4 to 286.9 kOe. The effects of irradiation on Fe atoms local environment at different lattice sites are different. The near edge structure of Fe L{sub 3} edge is changed, indicating the density of unoccupied state of Fe 3d electrons increases after proton irradiation.

  13. γ-ray irradiation effect on magnetic properties of electromagnetic Fe-Si sheets

    Harara, W.

    1994-11-01

    The present work investigates the effect of γ-ray irradiation on the relative and differential magnetic permeabilities of electromagnetic steel sheets. The experimental work was carried out using transformer Fe-Si (97-3%) sheets. The sheets have two different forms E and I> The magnetic field dependence on the relative permeability as well as on the differential permeability before and after irradiation were measured. The measurements show that the relative permeability values of the sheets after irradiation in the region of rotation of magnetization domains were decreased whereas the value of their differential permeability around each working point remains unchangeable. (author). 7 refs., 14 figs., 6 tabs

  14. Piezoresistance in p-type silicon revisited

    Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads

    2008-01-01

    We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find...... to experiments. Finally, we present a fitting function of temperature and acceptor density to the 6×6 model that can be used to predict the piezoresistance effect in p-type silicon. ©2008 American Institute of Physics...... that the relaxation-time model needs to include all scattering mechanisms in order to obtain correct temperature and acceptor density dependencies. The k·p results are compared to results obtained using a recent tight-binding (TB) model. The magnitude of the pi44 piezocoefficient obtained from the TB model...

  15. Quantum renormalizations in anisotropic multisublattice magnets and the modification of magnetic susceptibility under irradiation

    Val'kov, V. V.; Shustin, M. S.

    2015-11-01

    The dispersion equation of a strongly anisotropic one-dimensional magnet catena-[FeII(ClO4)2{FeIII(bpca)2}]ClO4 containing alternating high-spin (HS) ( S = 2) and low-spin (LS) ( S = 1/2) iron ions is obtained by the diagram technique for Hubbard operators. The analysis of this equation yields six branches in the excitation spectrum of this magnet. It is important that the crystal field for ions with spin S = 2 is described by the Hamiltonian of single-ion easy-plane anisotropy, whose orientation is changed by 90° when passing from one HS iron ion to another. The U( N) transformation technique in the atomic representation is applied to diagonalize a single-ion Hamiltonian with a large number of levels. It is shown that the modulation of the orientation of easy magnetization planes leads to a model of a ferrimagnet with easy-axis anisotropy and to the formation of energy spectrum with a large gap. For HS iron ions, a decrease in the mean value of the spin projection due to quantum fluctuations is calculated. The analysis of the specific features of the spectrum of elementary excitations allows one to establish a correspondence to a generalized Ising model for which the magnetic susceptibility is calculated in a wide range of temperatures by the transfer-matrix method. The introduction of a statistical ensemble that takes into account the presence of chains of different lengths and the presence of iron ions with different spins allows one to describe the experimentally observed modification of the magnetic susceptibility of the magnet under optical irradiation.

  16. Solar surface magnetism and irradiance on time scales

    Domingo, V.; Ermolli, I.; Fox, P.; Fröhlich, C.; Haberreiter, M.; Krivova, N.; Kopp, G.; Schmutz, W.; Solanki, S.K.; Spruit, H.C.; Unruh, Y.C.; Vögler, A.

    2009-01-01

    The uninterrupted measurement of the total solar irradiance during the last three solar cycles and an increasing amount of solar spectral irradiance measurements as well as solar imaging observations (magnetograms and photometric data) have stimulated the development of models attributing irradiance

  17. Irradiated radiation dose measurements of multilayer mirrors and permanent magnets used at FELI facilities

    Wakisaka, K.; Tongu, H.; Okuma, S.; Oshita, E.; Wakita, K.; Takii, T.; Tomimasu, Takio

    1997-01-01

    Recently the operation time of the free electron laser (FEL) user's facilities is close on three thousand hours per year. Cavity mirrors of their optical resonators and permanent magnets of their undulators are used under high intensity radiation field along their high current electron beam lines. Among these mirrors and permanent magnets, multilayer mirrors and Nd-Fe-B permanent magnets are not so strong against radiation damage compared with Au-coated copper mirrors and Sm-Co permanent magnets. A radiation damage on Ta 2 O 5 /SiO 2 mirrors was found for the first time after about fifty hours visible FEL operation at the FELI. The damage is due to irradiated bremsstrahlung and intracavity FEL. However, radiation damages on Nd-Fe-B permanent magnets were already reported compared with Sm-Co ones using high energy neutrons, protons, deuterons and 60 Coγ-rays. Mixed irradiation effects of 85-MeV electrons, bremsstrahlung and 60 Coγ-rays and of 17-MeV electrons and 60 Coγ-rays were also studied. The latest results show that the magnetic flux loss of Nd-Fe-B is 2% at an absorbed dose of 10 MGy. The present work was carried out to study the irradiated dose distributions near the multilayer mirrors and Nd-Fe-B permanent magnets with thermoluminescence dosimeters (TLDs). The irradiated dose to the cavity mirrors used in Linac-based FEL experiment is estimated to be 0.3 MGray for fifty hours irradiation. The irradiated dose to the Nd-Fe-B magnets is estimated to be 16 MGray for 2 thousand hours operation. The decrease of their magnetic flux due to 16 MGray is estimated to be about 3%. These dose monitorings are useful to reduce irradiated dosages to the mirrors and the permanent magnets as low as possible and to estimate their safety lifetimes. (author)

  18. Magnetically separable nanoferrite-anchored glutathione: Aqueous homocoupling of arylboronic acids under microwave irradiation

    A highly active, stable and magnetically separable glutathione based organocatalyst provided good to excellent yields to symmetric biaryls in the homocoupling of arylboronic acids under microwave irradiation. Symmetrical biaryl motifs are present in a wide range of natural p...

  19. Application of neutron transmutation doping method to initially p-type silicon material.

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

  20. Evolution of plant P-type ATPases

    Christian N.S. Pedersen

    2012-02-01

    Full Text Available Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauria and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a moss, Selaginella moellendorffii (a primitive vascular plant, and Arabidopsis thaliana (a model flowering plant. Each organism contained sequences for all five subfamilies of P-type ATPases. Our analysis demonstrates when specific subgroups of P-type ATPases disappeared in the evolution of Angiosperms. Na/K-pump related P2C ATPases were lost with the evolution of streptophytes whereas Na+ or K+ pumping P2D ATPases and secretory pathway Ca2+-ATPases remained until mosses. An N-terminally located calmodulin binding domain in P2B ATPases can only be detected in pumps from Streptophytae, whereas, like in animals, a C-terminally localized calmodulin binding domain might be present in chlorophyte P2B Ca2+-ATPases. Chlorophyte genomes encode P3A ATPases resembling protist plasma membrane H+-ATPases and a C-terminal regulatory domain is missing. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps.

  1. Hydrogen interaction with radiation defects in p-type silicon

    Feklisova, O V; Yakimov, E B; Weber, J

    2001-01-01

    Hydrogen interaction with radiation defects in p-type silicon has been investigated by deep-level non-stationary spectroscopy. Hydrogen is introduced into the high-energy electron-irradiated crystals under chemical etching in acid solutions at room temperature followed by the reverse-bias annealing at 380 K. It is observed that passivation of the irradiation-induced defects is accompanied by formation of novel electrically active defects with hydrogen-related profiles. Effect of hydrogen on the electrical activity of the C sub s C sub i complexes is shown for the first time. Based on the spatial distribution and passivation kinetics, possible nature of the novel complexes is analyzed. The radii for hydrogen capture by vacancies, K-centers, C sub s C sub i centers and the novel complexes are determined

  2. Effects of High-Energy Proton-Beam Irradiation on the Magnetic Properties of ZnO Nanorods

    Park, Jun Kue; Kwon, Hyeok-Jung; Cho, Yong Sub [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    There are still many problem for the application due to its unstable magnetism state and too small magnetization values. Here we investigate magnetic properties of ZnO nanorods after high-energy proton-beam irradiation. Electron spin resonance (ESR) measurement on temperature was made to identify intrinsic or extrinsic defects as well as to observe magnetic ordering after irradiation. Understanding the effects of proton beam irradiation on magnetic behavior may help to shed light on the mechanism responsible for the magnetic ordering in this material. We have investigated proton-beam irradiation effects on the magnetic properties of ZnO nanorods. After irradiation a broad ESR line is observed, indicating emergence of ferromagnetic ordering up to room temperature. In M-H curve, stronger coercive field is observed after irradiation.

  3. P-type silicon drift detectors

    Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

    1995-06-01

    Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

  4. Investigation on demagnetization of Nd2Fe14B permanent magnets induced by irradiation

    Li, Zhefu; Jia, Yanyan; Liu, Renduo; Xu, Yuhai; Wang, Guanghong; Xia, Xiaobin

    2017-12-01

    Nd2Fe14B is an important component of insertion devices, which are used in synchrotron radiation sources, and could be demagnetized by irradiation. In the present study, the Monte Carlo code FLUKA was used to analyze the irradiation field of Nd2Fe14B, and it was confirmed that the main demagnetization particle was neutron. Nd2Fe14B permanent magnet samples were irradiated by Ar ions at different doses to simulate neutron irradiation damage. The hysteresis loops were measured using a vibrating sample magnetometer, and the microstructure evolutions were characterized by transmission electron microscopy. Moreover, the relationship between them was discussed. The results indicate that the decrease in saturated magnetization is caused by the changes in microstructure. The evolution of single crystals into an amorphous structure is the reason for the demagnetization phenomenon of Nd2Fe14B permanent magnets when considering its microscopic structure.

  5. Topological insulator homojunctions including magnetic layers: the example of n-p type (n-QLs Bi.sub.2./sub.Se.sub.3./sub./Mn-Bi.sub.2./sub.Se.sub.3./sub.) heterostructures

    Vališka, M.; Warmuth, J.; Michiardi, M.; Vondráček, Martin; Ngankeu, A.S.; Holý, V.; Sechovský, V.; Springholz, G.; Bianchi, M.; Wiebe, J.; Hofmann, P.; Honolka, Jan

    2016-01-01

    Roč. 108, č. 26 (2016), 1-4, č. článku 262402. ISSN 0003-6951 R&D Projects: GA MŠk(CZ) LM2011029; GA MŠk LO1409; GA ČR(CZ) GA14-30062S Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 Keywords : topological insulator * Mn-Bi2Se 3 * homojunction * ARPES Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.411, year: 2016

  6. Effect of low temperature reactor irradiation on organic insulators in superconducting magnets, (4)

    Kato, Teruo; Takamura, Saburo

    1983-01-01

    In order to study effects of irradiation at low temperature on insulating materials of superconducting magnets, flexural and impact tests are carried out at 4.2K without warmup after low temperature irradiation for several fiber reinforced plastics. The used materials are glass fiber reinforced epoxies and polyimide, and carbon fiber reinforced epoxies. After irradiation of 1.1 X 10 9 rad, the reduction in flexural strength of G-10 CR is about 70% and that of G-11 CR about 25%. No change are observed in strength of glass fiber reinforced polyimide by low temperature irradiation. Other kinds of glass fiber reinforced epoxies show a reduction in strength but the flexural strength of carbon fiber reinforced epoxies increases a small by irradiation. Irradiation effect of these materials on impact value is similar to that on flexural strength. (author)

  7. Superconductivity in Ti3P-type compounds

    Wills, J.O.; Hein, R.A.; Waterstrat, R.M.

    1978-01-01

    A study of 12 intermetallic A 3 B compounds which crsytallize in the tetragonal Ti 3 P-type structure has revealed five new superconductors with transition temperatures below 1 K: Zr 3 Si, Zr 3 Ge, Zr 3 P, V 3 P, and Nb 3 Ge (extrapolated from the alloy series Nb-Ge-As). In addition, two compounds, Zr 3 Sb and Ta 3 Ge, having the Ni 3 P structure type are found to be superconducting below 1 K. Within the Ti 3 P-type compounds, those with the lighter ''B'' elements in a given column of the Periodic Table have the higher transition temperatures. Critical-magnetic-field and electrical-resistivity data are reported for the superconducting Ti 2 P-type compound Nb 3 P, which permit one to estimate the Ginzburg-Landau kappa parameter and the electronic-specific-heat coefficient γ. The kappa value of 8.4 indicates that this material is type II, and the γ value of 1.3 mJ/mole K 2 for Nb 3 P is probably related to its low transition temperature relative to many A15 compounds

  8. Fe+ ion irradiation induced changes in structural and magnetic properties of iron films

    K. Papamihail

    2016-12-01

    Full Text Available 490keV Fe+ ion irradiation of 200nm thick Fe films was found to induce both structural and magnetic changes. Both, the lattice constant and the grain size increase as a function of dose and both properties follow the same power law. Irradiation induces a depth dependent magnetic profile consisting of two sublayers. The top Fe sublayer has a magnetic moment higher than that of the Fe before the irradiation whereas the bottom sublayer lower. The two sublayers are connected with the effects of Fe+ irradiation, i.e. the top sublayer with the depth in which mainly radiation damage occurs whereas the bottom one with the implantation of impinging Fe+ ions. The magnetic moments of the two sublayers have a non-monotonous variation with irradiation dose depicting a maximum for the top sublayer and a minimum for the bottom one at 96.2 dpa (‘displacements per atom’. The magnetic moment enhancement/reduction is discussed in relation with the atomic volume variation in the case of atom displacements and/or implantation effects.

  9. Effects of irradiation and mechanical stress on the superconducting properties of candidate magnet conductors

    Snead, C.L. Jr.; Luhman, T.

    1980-01-01

    The effects of radiation damage on the superconducting critical properties of candidate magnet materials are reviewed. Neutron, and charged-particle irradiation results are covered. The discussion is restricted to effects in NbTi and the A15-compound superconductors. The utility of these conductors in radiation fields is first explored by defining the magnitude of critical-property changes with the fluence of various irradiating particles. The physical mechanisms that couple the irradiation defects to the observed critical-property changes are discussed. Annealing/recovery data on irradiated materials are included where they pertain to the understanding of the physical mechanisms involved, and thereby to the desirability of magnet annealing in actual operating circumstances

  10. Change in properties of superconducting magnet materials by fusion neutron irradiation

    Nishimura, Arata; Nishijima, Shigehiro; Takeuchi, Takao; Nishitani, Takeo

    2007-01-01

    A fusion reactor will generate a lot of high energy neutron and much energy will be taken out of the neutrons by a blanket system. Since some neutrons will stream out of a plasma vacuum vessel through neutral beam injection ports and penetrate a blanket system, a superconducting magnet system, which provides high magnetic field to confirm high energy particles, will be irradiated by a certain amount of neutrons. By developing the new NBI system or by reducing the penetration, the neutron fluence to the superconducting magnet will be able to be reduced. However, it is not easy to achieve the lower streaming and penetration at the present. Therefore, investigations on irradiation behavior of superconducting magnet materials are desired and some novel researches have been performed from 1970s. In general, the critical current of the superconducting wire increases under fast neutron environment comparing with that of the non-irradiated wire, and then decreased to almost zero as an increase of neutron fluence. On the other hand, the critical temperature of the wire starts to get down around 10 22 n/m 2 of neutron fluence and the temperature margin will be decreased during the operation by the neutron irradiation. In this paper, some aspects of irradiated materials will be overviewed and general tendency will be discussed focussing on knock-on effect of fast neutron and long range ordering of A15 compounds

  11. Effects of C3+ ion irradiation on structural, electrical and magnetic properties of Ni nanotubes

    Shlimas, D. I.; Kozlovskiy, A. L.; Zdorovets, M. V.; Kadyrzhanov, K. K.; Uglov, V. V.; Kenzhina, I. E.; Shumskaya, E. E.; Kaniukov, E. Y.

    2018-03-01

    Ion irradiation is an attractive method for obtaining nanostructures that can be used under extreme conditions. Also, it is possible to control the technological process that allows obtaining nanomaterials with new properties at ion irradiation. In this paper, we study the effect of irradiation with 28 MeV C3+ ions and fluences up to 5 × 1011 cm-2 on the structure and properties of template-synthesized nickel nanotubes with a length of 12 μm, with diameters of 400 nm, and a wall thickness of 100 nm. It is demonstrated that the main factor influencing the degradation of nanostructures under irradiation in PET template is the processes of mixing the material of nanostructures with the surrounding polymer. The influence of irradiation with various fluences on the crystal structure, electrical and magnetic properties of nickel nanotubes is studied.

  12. Point defects and magnetic properties of neutron irradiated MgO single crystal

    Mengxiong Cao

    2017-05-01

    Full Text Available (100-oriented MgO single crystals were irradiated to introduce point defects with different neutron doses ranging from 1.0×1016 to 1.0×1020 cm-2. The point defect configurations were studied with X-ray diffuse scattering and UV-Vis absorption spectra. The isointensity profiles of X-ray diffuse scattering caused by the cubic and double-force point defects in MgO were theoretically calculated based on the Huang scattering theory. The magnetic properties at different temperature were measured with superconducting quantum interference device (SQUID. The reciprocal space mappings (RSMs of irradiated MgO revealed notable diffuse scattering. The UV-Vis spectra indicated the presence of O Frenkel defects in irradiated MgO. Neutron-irradiated MgO was diamagnetic at room temperature and became ferromagnetic at low temperature due to O Frenkel defects induced by neutron-irradiation.

  13. Magnetic properties changes of MnAs thin films irradiated with highly charged ions

    Trassinelli , Martino; Gafton , V.; Eddrief , Mahmoud; Etgens , Victor H.; Hidki , S.; Lacaze , Emmanuelle; Lamour , Emily; Luo , X.; Marangolo , Massimiliano; Merot , Jacques; Prigent , Christophe; Reuschl , Regina; Rozet , Jean-Pierre; Steydli , S.; Vernhet , Dominique

    2013-01-01

    International audience; We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Prelim...

  14. Solar Irradiance Variability is Caused by the Magnetic Activity on the Solar Surface.

    Yeo, Kok Leng; Solanki, Sami K; Norris, Charlotte M; Beeck, Benjamin; Unruh, Yvonne C; Krivova, Natalie A

    2017-09-01

    The variation in the radiative output of the Sun, described in terms of solar irradiance, is important to climatology. A common assumption is that solar irradiance variability is driven by its surface magnetism. Verifying this assumption has, however, been hampered by the fact that models of solar irradiance variability based on solar surface magnetism have to be calibrated to observed variability. Making use of realistic three-dimensional magnetohydrodynamic simulations of the solar atmosphere and state-of-the-art solar magnetograms from the Solar Dynamics Observatory, we present a model of total solar irradiance (TSI) that does not require any such calibration. In doing so, the modeled irradiance variability is entirely independent of the observational record. (The absolute level is calibrated to the TSI record from the Total Irradiance Monitor.) The model replicates 95% of the observed variability between April 2010 and July 2016, leaving little scope for alternative drivers of solar irradiance variability at least over the time scales examined (days to years).

  15. Air-electron stream interactions during magnetic resonance IGRT. Skin irradiation outside the treatment field during accelerated partial breast irradiation

    Park, Jong Min; Shin, Kyung Hwan; Wu, Hong-Gyun; Kim, Jung-in; Park, So-Yeon; Kim, Jin Ho; Jeon, Seung Hyuck; Choi, Noorie

    2018-01-01

    To investigate and to prevent irradiation outside the treatment field caused by an electron stream in the air generated by the magnetic field during magnetic resonance image-guided accelerated partial breast irradiation (APBI). In all, 20 patients who received APBI with a magnetic resonance image-guided radiation therapy (MR-IGRT) system were prospectively studied. The prescription dose was 38.5 Gy in 10 fractions of 3.85 Gy and delivered with a tri-cobalt system (the ViewRay system). For each patient, primary plans were delivered for the first five fractions and modified plans with different gantry angles from those of the primary plan (in-treatment plans) were delivered for the remaining five fractions to reduce the skin dose. A 1 cm thick bolus was placed in front of the patient's jaw, ipsilateral shoulder, and arm to shield them from the electron stream. Radiochromic EBT3 films were attached to the front (towards the breast) and back (towards the head) of the bolus during treatment. Correlations between the measured values and the tumor locations, treatment times, and tumor sizes were investigated. For a single fraction delivery, the average areas of the measured isodoses of 14% (0.54 Gy), 12% (0.46 Gy), and 10% (0.39 Gy) at the front of the boluses were as large as 3, 10.4, and 21.4 cm 2 , respectively, whereas no significant dose could be measured at the back of the boluses. Statistically significant but weak correlations were observed between the measured values and the treatment times. During radiotherapy for breast cancer with an MR-IGRT system, the patient must be shielded from electron streams in the air generated by the interaction of the magnetic field with the beams of the three-cobalt treatment unit to avoid unwanted irradiation of the skin outside the treatment field. (orig.) [de

  16. Theoretical study of magnetic pattern replication by He+ ion irradiation through stencil masks

    Devolder, T.; Chappert, C.; Bernas, H.

    2002-01-01

    We have developed an irradiation technique that allows us to tune the magnetic properties of Co/Pt multilayers without affecting their roughness. The planarity and the ability to independently control nanostructure size and coercivity make our technique very appealing for magnetic recording. We study the irradiation-induced 1:1 replication of features drilled in a stencil mask. Both the 'gap' G between the magnetic film and the mask, and the aspect ratio (AR) of the mask features are analyzed, in view of the ion straggling in the mask resulting in collateral damages. Optimal gap is such that D<< G<< D/tan(α) (typically 0.1<< G<<25 μm), where the D is the feature size. The replication quality is best for AR≥3. Since the allowed gap interval is wide, we anticipate that mask fast positioning will be possible for the applications to magnetic recording

  17. Synthesis of flexible magnetic nanohybrid based on bacterial cellulose under ultrasonic irradiation

    Zheng, Yi; Yang, Jingxuan; Zheng, Weili; Wang, Xiao; Xiang, Cao; Tang, Lian; Zhang, Wen; Chen, Shiyan; Wang, Huaping

    2013-01-01

    Flexible magnetic membrane based on bacterial cellulose (BC) was successfully prepared by in-situ synthesis of the Fe 3 O 4 nanoparticles under different conditions and its properties were characterized. The results demonstrated that the Fe 3 O 4 nanoparticles coated with PEG were well homogeneously dispersed in the BC matrix under ultrasonic irradiation with the saturation magnetization of 40.58 emu/g. Besides that, the membranes exhibited the striking flexibility and mechanical properties. This study provided a green and facile method to inhibit magnetic nanoparticle aggregation without compromising the mechanical properties of the nanocomposites. Magnetically responsive BC membrane would have potential applications in electronic actuators, information storage, electromagnetic shielding coating and anti-counterfeit. - Highlights: ► Flexible magnetic film is prepared by in situ synthesis on bacterial cellulose. ► Ultrasound and PEG are used together to inhibit the nanoparticle aggregation. ► The magnetic membrane demonstrates the great superparamagnetic behavior

  18. Effect of microwave irradiation on selective heating behavior and magnetic separation characteristics of Panzhihua ilmenite

    Zhao, Wei; Chen, Jin; Chang, Xiaodong; Guo, Shenghui; Srinivasakannan, C.; Chen, Guo; Peng, Jinhui

    2014-01-01

    Highlights: • Microwave irradiation can be applied effectively and efficiently to the irradiation processes of Panzhihua ilmenite. • The mineral processing properties of microwave treated ilmenite were generally as good as or better than that of initial ilmenite. • The microwave selective heating characteristics of the different minerals and compounds, and the thermal stresses were caused by the uniform heat rate disturbed under microwave irradiation. - Abstract: The influences of microwave irradiation on the surface characteristics of Panzhihua ilmenite were systematically investigated. The crystal structures, surface morphology and surface chemical functional groups of ilmenite were characterized before and after microwave irradiation and magnetic separation for different microwave treatment times by using various methods, such as XRD, SEM, and FT-IR, respectively. XRD analysis showed that the microwave treated ilmenite has the strongest peaks of phase more than that of raw samples, indicates that the crystalline compound of ilmenite increased with the microwave irradiation time. SEM analysis showed the micro-cracking appeared at many grain boundaries of ilmenite after being pretreated by microwave treatment. The separations of ilmenite from gangue minerals were completed and the micro-fissure within ilmenite minerals were also formed, which could be attributed to the microwave selective heating characteristics of the different minerals and compounds, and the thermal stresses were caused by the uniform heat rate disturbed under microwave irradiation. The mineral processing results showed that the magnetic separation characteristics and properties of microwave treated ilmenite samples were better than that of microwave untreated ilmenite samples. It was concluded that microwave irradiation can be applied effectively and efficiently to the irradiation processes of Panzhihua ilmenite

  19. A permanent magnet electron beam spread system used for a low energy electron irradiation accelerator

    Huang Jiang; Xiong Yongqian; Chen Dezhi; Liu Kaifeng; Yang Jun; Li Dong; Yu Tiaoqin; Fan Mingwu; Yang Bo

    2014-01-01

    The development of irradiation processing industry brings about various types of irradiation objects and expands the irradiation requirements for better uniformity and larger areas. This paper proposes an innovative design of a permanent magnet electron beam spread system. By clarifying its operation principles, the author verifies the feasibility of its application in irradiation accelerators for industrial use with the examples of its application in electron accelerators with energy ranging from 300 keV to 1 MeV. Based on the finite element analyses of electromagnetic fields and the charged particle dynamics, the author also conducts a simulation of electron dynamics in magnetic field on a computer. The results indicate that compared with the traditional electron beam scanning system, this system boosts the advantages of a larger spread area, non-power supply, simple structure and low cost, etc., which means it is not only suitable for the irradiation of objects with the shape of tubes, strips and panels, but can also achieve a desirable irradiation performance on irregular constructed objects of large size. (authors)

  20. Time-resolved magnetic field effects in exciplex systems under X-irradiation

    Anishchik, S.V.; Lavrik, N.L.

    1988-01-01

    The presence of exciplex systems after X-irradiation of pyrene and N,N-diethylaniline in methanol as well as the influence of the applied magnetic field on exciplex fluorescence was registered using a time-resolving method. The experimental results confirmed the hypothesis on exciplex emergence in the system under study. (author)

  1. Neutronic irradiation effect in FeNi alloys, observed by magnetic measurements

    Sciani, V.; Lucki, G.

    1986-01-01

    In this work some aspects of radiation damage are analysed through the influence of neutron irradiation on magnetic properties of FeNi alloys. The main points emphasized are: radiation enhanced diffusion, determination of the activation energy for diffusion process and vacancies supersaturation, which is an important parameter from technological point of view and a necessary condition for the void formation. (Author) [pt

  2. Neutron irradiation effects on magnetic properties of Fe-based ferromagnetic metallic glasses

    Miglierini, M.; Nasu, Saburo; Skorvanek, I.; Sitek, J.

    1992-01-01

    Transmission 57 Fe Moessbauer spectroscopy, J-H quasistatic hysteresis loop and AC susceptibility measurements are used to study effects of neutron irradiation on magnetic properties of Fe-based-ferromagnetic metallic glasses. Elastic stress centers are produced during the process of neutron irradiation as a result of atom mixing. Rearrangement of the atoms causes changes in the average value of the hyperfine field distribution and orientation of the net magnetic moment. They are shown to depend on the composition of the investigated samples. Cr-doped metallic glasses depict transition from the ferromagnetic to paramagnetic state at room temperature after neutron irradiation implying changes in the Curie temperature. The presence of Ni in the samples reduces the effects of radiation damage as revealed also from position lifetime data. Possible sources of a radiation damage are discussed using the results of γ-ray spectroscopy. (author)

  3. Neutron irradiation effects on magnetic properties of Fe-based ferromagnetic metallic glasses

    Miglierini, M.; Nasu, Saburo (Osaka Univ., Toyonaka (Japan). Faculty of Science); Skorvanek, I.; Sitek, J.

    1992-04-01

    Transmission {sup 57}Fe Moessbauer spectroscopy, J-H quasistatic hysteresis loop and AC susceptibility measurements are used to study effects of neutron irradiation on magnetic properties of Fe-based-ferromagnetic metallic glasses. Elastic stress centers are produced during the process of neutron irradiation as a result of atom mixing. Rearrangement of the atoms causes changes in the average value of the hyperfine field distribution and orientation of the net magnetic moment. They are shown to depend on the composition of the investigated samples. Cr-doped metallic glasses depict transition from the ferromagnetic to paramagnetic state at room temperature after neutron irradiation implying changes in the Curie temperature. The presence of Ni in the samples reduces the effects of radiation damage as revealed also from position lifetime data. Possible sources of a radiation damage are discussed using the results of {gamma}-ray spectroscopy. (author).

  4. Irradiation effect of the insulating materials for fusion superconducting magnets at cryogenic temperature

    Kobayashi, Koji; Akiyama, Yoko; Nishijima, Shigehiro

    2017-09-01

    In ITER, superconducting magnets should be used in such severe environment as high fluence of fast neutron, cryogenic temperature and large electromagnetic forces. Insulating material is one of the most sensitive component to radiation. So radiation resistance on mechanical properties at cryogenic temperature are required for insulating material. The purpose of this study is to evaluate irradiation effect of insulating material at cryogenic temperature by gamma-ray irradiation. Firstly, glass fiber reinforced plastic (GFRP) and hybrid composite were prepared. After irradiation at room temperature (RT) or liquid nitrogen temperature (LNT, 77 K), interlaminar shear strength (ILSS) and glass-transition temperature (Tg) measurement were conducted. It was shown that insulating materials irradiated at room temperature were much degraded than those at cryogenic temperature.

  5. Functionalization and magnetization of carbon nanotubes using Co-60 gamma-ray irradiation

    Chen, C.Y.; Fu, M.J.; Tsai, C.Y. [Division of Isotope Application, Institute of Nuclear Energy Research, Atomic Energy Council, P.O. BOX 3-27 Longtan, Taoyuan County 32546, Taiwan (R.O.C.) (China); Lin, F.H. [Institute of Biomedical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (R.O.C.) (China); Chen, K.Y., E-mail: chenky@iner.gov.tw [Division of Isotope Application, Institute of Nuclear Energy Research, Atomic Energy Council, P.O. BOX 3-27 Longtan, Taoyuan County 32546, Taiwan (R.O.C.) (China)

    2014-10-01

    Functionalized magnetic carbon nanotubes (CNTs) can be used in the biological and biomedical fields as biosensors, drug delivery systems, etc., which makes research into processes for manufacturing modified CNTs quite important. In this paper, Co-60 gamma irradiation is shown to be an effective tool for fabricating functionalized and magnetized CNTs. After the Co-60 gamma irradiation, the presence of carboxylic functional groups on the CNT walls was confirmed by their Fourier transform infrared spectra, and the presence of Fe{sub 3}O{sub 4} was verified by the X-ray diffraction patterns. The functionalized and magnetized CNTs produced using Co-60 gamma irradiation have excellent dispersion properties. The techniques for functionalizing and magnetizing CNTs are introduced in this paper, and applications of the modified CNTs will be reported after more data are gathered. - Highlights: Dispersion ability of carbon nanotubes (CNTs) was improved by functionalization. CNTs were easily manipulated by precipitation of magnetic nanoparticles. Our product can be used as versatile biosensor substrate for biomarker screening.

  6. Ion irradiation effects in structural and magnetic properties of Co/Cu multilayers

    Sakamoto, Isao; Okazaki, Satoshi; Koike, Masaki; Honda, Shigeo

    2012-01-01

    400 keV Ar ion (the Ar ion) and 50 keV He ion (the He ion) irradiations were performed in order to elucidate roles of Co/Cu interfacial structures in physical origins of giant magnetoresistance (GMR) in the [Co (2 nm)/Cu (2 nm)] 30 multilayers (MLs). The magnetoresistance (MR) ratio after the Ar ion irradiation decreases abruptly with increasing Ar ion fluence. On the other hand, the MR ratio after the He ion irradiation decreases slowly with increasing He ion fluence. The Ar ion irradiation induces the decrease in the difference (R max − R sat ) between the maximum resistance (R max ) and the saturated resistance (R sat ) under in-plane magnetic field and the increase in the R sat , although the effect of the He ion irradiation is not remarkable. The decrease in the (R max − R sat ) rather than the increase in the R sat seems to be effective for the decrease in the MR ratios after the Ar ion and the He ion irradiation. The increase in the R sat implies the mixing of Co atoms in Cu layers. The antiferromagnetic coupling fraction (AFF) estimated from the magnetization curves after the Ar ion and the He ion irradiation shows the similar behavior with the MR ratio as a function of ion fluence. Therefore, although the degrees of the irradiation effects by the Ar ion and the He ions are different, we suggest the relation between the GMR and the AFF affected by the ion-induced interfacial structures accompanied with the atomic mixing in the interfacial region.

  7. Effect of low temperature neutron irradiation on the magnetoresistivity in stabilizer materials for a superconducting magnet

    Nakata, Kiyotomo; Tada, Naobumi; Masaoka, Isao; Takamura, Saburo.

    1985-01-01

    Magnetoresistivity changes caused by neutron irradiation at 5 K, annealing up to 300 K and cyclic irradiation are studied in copper and aluminuim stabilizer materials at 4.2 K. The radiation-induced resistivity in Al is about three times as large as that in Cu, and the resistivities in both Al and Cu are independent of the purity and the degree of cold-work of the samples. The radiation-induced magnetoresistivity of the high purity Cu with R.R.R. (R sub(298 K)/R sub(4.2 K)) of 1400 is larger than that of the impure Cu with R.R.R. of 300 and 280. The magnetoresistivities of the high purity Cu and Al with R.R.R. of 1500 increase with the magetic field. Magnetoresistivity change with the magnetic field in the irradiated Cu mostly follows Kohler's rule, and that in the irradiated Al does not follow the rule at high magnetic fields. By the annealing at 300 K after the irradiation, the radiation-induced resistivity is completely annihilated in the Al, but about 20 % of the resistivity retains in the full-annealed Cu and the retained resistivity is accumulated during the cyclic irradiation. Though the accumulated resistivity in the cold-worked Cu is smaller than that in the full-annealed one, the resistivity before irradiation in the cold-worked samples is very large. From the above results, the full-annealed Cu with R.R.R. of about 300 is considered to be the best material as a stabilizer used under irradiation. (author)

  8. Synthesis and spectroscopic characterization of magnetic hydroxyapatite nanocomposite using ultrasonic irradiation

    Gopi, D.; Ansari, M. Thameem; Shinyjoy, E.; Kavitha, L.

    2012-02-01

    Nowadays magnetic hydroxyapatite (m-HAP) has potential applications in biomedicine more especially for bone cancer treatment. In this paper the functionalization of the hydroxyapatite (HAP) with magnetite nanoparticle (MNP) through ultrasonic irradiation technique is reported and its spectral investigation has been carried out. The ultrasonic irradiation with two different frequencies of 28 kHz and 35 kHz at the power of 150 and 320 W, respectively, was employed for the synthesis of m-HAP. The ultrasound irradiation of 35 kHz at 320 W shows the efficient diffusion of MNP to the HAP host matrix leads to the formation of m-HAP. The ultrasonic irradiation technique does not require stabilizers as in the case of coprecipitation method hence the final product of pure m-HAP is obtained. The X-ray diffraction pattern shows the formation of magnetite nanoparticles which are functionalized with hydroxyapatite host matrix. The vibrating sample magnetometer curve exhibits the super paramagnetic property of the samples and the saturation magnetization ( Ms) value of the functionalized magnetic hydroxyapatite. The Ms value is found to be much less than that of pure magnetite nanoparticle and this decrement in Ms is due to the hindrance of magnetic domain of the particles with HAP. The portrayed Raman spectra discriminate between the m-HAP and MNP with corresponding vibrational modes of frequencies. The transmission electron micrograph shows excellent morphology of functionalized m-HAP in nanometer range. The atomic force microscopic investigation shows the 3-dimensional view of crust and trench shape of m-HAP. All these results confirm the formation of magnetic hydroxyapatite nanocomposite with typical magnetic property for biological applications.

  9. Defect induced modification of structural, topographical and magnetic properties of zinc ferrite thin films by swift heavy ion irradiation

    Raghavan, Lisha [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India); Inter University Accelerator Center, New Delhi 110067 (India); Joy, P.A. [National Chemical Laboratory, Pune (India); Vijaykumar, B. Varma; Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Anantharaman, M.R., E-mail: mraiyer@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India)

    2017-04-01

    Highlights: • Zinc ferrite films exhibited room temperature ferrimagnetic property. • On ion irradiation amorphisation of films were observed. • The surface morphology undergoes changes with ion irradiation. • The saturation magnetisation decreases on ion irradiation. - Abstract: Swift heavy ion irradiation provides unique ways to modify physical and chemical properties of materials. In ferrites, the magnetic properties can change significantly as a result of swift heavy ion irradiation. Zinc ferrite is an antiferromagnet with a Neel temperature of 10 K and exhibits anomalous magnetic properties in the nano regime. Ion irradiation can cause amorphisation of zinc ferrite thin films; thus the role of crystallinity on magnetic properties can be examined. The influence of surface topography in these thin films can also be studied. Zinc ferrite thin films, of thickness 320 nm, prepared by RF sputtering were irradiated with 100 MeV Ag ions. Structural characterization showed amorphisation and subsequent reduction in particle size. The change in magnetic properties due to irradiation was correlated with structural and topographical effects of ion irradiation. A rough estimation of ion track radius is done from the magnetic studies.

  10. Magnetic resonance thermometry for monitoring photothermal effects of interstitial laser irradiation

    Goddard, Jessica; Jose, Jessnie; Figueroa, Daniel; Le, Kelvin; Liu, Hong; Nordquist, Robert E.; Hode, Tomas; Chen, Wei R.

    2012-03-01

    Selective photothermal interaction using dye-assisted non-invasive laser irradiation has limitations when treating deeper tumors or when the overlying skin is heavily pigmented. We developed an interstitial laser irradiation method to induce the desired photothermal effects. An 805-nm near-infrared laser with a cylindrical diffuser was used to treat rat mammary tumors by placing the active tip of the fiber inside the target tumors. Three different power settings (1.0 to 1.5 watts) were applied to treat animal tumors with an irradiation duration of 10 minutes. The temperature distributions of the treated tumors were measured by a 7.1-Tesla magnetic resonance imager using proton resonance frequency (PRF) method. Three-dimensional temperature profiles were reconstructed and assessed using PRF. This is the first time a 7.1-Tesla magnetic resonance imager has been used to monitor interstitial laser irradiation via PRF. This study provides a basic understanding of the photothermal interaction needed to control the thermal damage inside tumor using interstitial laser irradiation. It also shows that PRF can be used effectively in monitoring photothermal interaction. Our long-term goal is to develop a PRF-guided laser therapy for cancer treatment.

  11. Electron-irradiation induced changes in structural and magnetic properties of Fe and Co based metallic glasses

    Kane, S.N., E-mail: kane_sn@yahoo.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Satalkar, M., E-mail: satalkar.manvi@gmail.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Ghosh, A.; Shah, M. [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Ghodke, N. [UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India); Pramod, R.; Sinha, A.K.; Singh, M.N.; Dwivedi, J. [Raja Ramanna Centre for Advanced Technology, P.O. CAT, Indore 452013 (India); Coisson, M.; Celegato, F.; Vinai, F.; Tiberto, P. [INRIM, Electromagnetism Division, Strada Delle Cacce 91, I-10135 TO (Italy); Varga, L.K. [RISSPO, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

    2014-12-05

    Highlights: • Enhancement of Ms by low electron irradiation dose in Fe-based alloy. • Variation of magnetic properties by electron irradiation induced ordered phase. • Electron irradiation alters TM-TM distance and, magnetic properties. - Abstract: Electron-irradiation induced changes in structural and, magnetic properties of Co{sub 57.6}Fe{sub 14.4}Si{sub 4.8}B{sub 19.2}Nb{sub 4}, Fe{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4} and, Co{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4} metallic glasses were studied using magnetic hysteresis and, synchrotron X-ray diffraction measurements. Results reveal composition dependent changes of magnetic properties in electron irradiated metallic glasses. A low electron irradiation dose (15 kGy) enhances saturation magnetization (up to 62%) in Fe-based alloy (Fe{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4}). Synchrotron XRD measurements reveal that electron irradiation transforms the amorphous matrix to a more ordered phase, accountable for changes in magnetic properties.

  12. Air-electron stream interactions during magnetic resonance IGRT : Skin irradiation outside the treatment field during accelerated partial breast irradiation.

    Park, Jong Min; Shin, Kyung Hwan; Kim, Jung-In; Park, So-Yeon; Jeon, Seung Hyuck; Choi, Noorie; Kim, Jin Ho; Wu, Hong-Gyun

    2018-01-01

    To investigate and to prevent irradiation outside the treatment field caused by an electron stream in the air generated by the magnetic field during magnetic resonance image-guided accelerated partial breast irradiation (APBI). In all, 20 patients who received APBI with a magnetic resonance image-guided radiation therapy (MR-IGRT) system were prospectively studied. The prescription dose was 38.5 Gy in 10 fractions of 3.85 Gy and delivered with a tri-cobalt system (the ViewRay system). For each patient, primary plans were delivered for the first five fractions and modified plans with different gantry angles from those of the primary plan (in-treatment plans) were delivered for the remaining five fractions to reduce the skin dose. A 1 cm thick bolus was placed in front of the patient's jaw, ipsilateral shoulder, and arm to shield them from the electron stream. Radiochromic EBT3 films were attached to the front (towards the breast) and back (towards the head) of the bolus during treatment. Correlations between the measured values and the tumor locations, treatment times, and tumor sizes were investigated. For a single fraction delivery, the average areas of the measured isodoses of 14% (0.54 Gy), 12% (0.46 Gy), and 10% (0.39 Gy) at the front of the boluses were as large as 3, 10.4, and 21.4 cm 2 , respectively, whereas no significant dose could be measured at the back of the boluses. Statistically significant but weak correlations were observed between the measured values and the treatment times. During radiotherapy for breast cancer with an MR-IGRT system, the patient must be shielded from electron streams in the air generated by the interaction of the magnetic field with the beams of the three-cobalt treatment unit to avoid unwanted irradiation of the skin outside the treatment field.

  13. Meso-scale magnetic signatures for nuclear reactor steel irradiation embrittlement monitoring

    Suter, J. D., E-mail: pradeep.ramuhalli@pnnl.gov; Ramuhalli, P., E-mail: pradeep.ramuhalli@pnnl.gov; Hu, S.; Li, Y.; Jiang, W.; Edwards, D. J.; Schemer-Kohrn, A. L.; Johnson, B. R. [Pacific Northwest National Laboratory, 902 Battelle Blvd, Richland, WA 99352 (United States); McCloy, J. S., E-mail: john.mccloy@wsu.edu; Xu, K., E-mail: john.mccloy@wsu.edu [Washington State University, PO Box 642920, Pullman, WA 99164 (United States)

    2015-03-31

    Verifying the structural integrity of passive components in light water and advanced reactors will be necessary to ensure safe, long-term operations of the existing U.S. nuclear fleet. This objective can be achieved through nondestructive condition monitoring techniques, which can be integrated with plant operations to quantify the “state of health” of structural materials in real-time. While nondestructive methods for monitoring many classes of degradation (such as fatigue or stress corrosion cracking) are relatively advanced, this is not the case for degradation caused by irradiation. The development of nondestructive evaluation technologies for these types of degradation will require advanced materials characterization techniques and tools that enable comprehensive understanding of nuclear reactor material microstructural and behavioral changes under extreme operating environments. Irradiation-induced degradation of reactor steels causes changes in their microstructure that impacts their micro-magnetic properties. In this paper, we describe preliminary results of integrating advanced material characterization techniques with meso-scale computational models. In the future, this will help to provide an interpretive understanding of the state of degradation in structural materials. Microstructural data are presented from monocrystalline Fe and are correlated with variable-field magnetic force microscopy and micro-magnetic measurements. Ongoing research is focused on extending the measurements and models on thin films to gain insights into the structural state of irradiated materials and the resulting impact on magnetic properties. Preliminary conclusions from these correlations are presented, and next steps described.

  14. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    Wang, Zhenwei

    2018-01-01

    , the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s

  15. Transport studies in p-type double quantum well samples

    Hyndman, R.J.

    2000-01-01

    The motivation for the study of double quantum well samples is that the extra spatial degree of freedom can modify the ground state energies of the system, leading to new and interesting many body effects. Electron bi-layers have been widely studied but the work presented here is the first systematic study of transport properties of a p-type, double quantum well system. The samples, grown on the 311 plane, consisted of two 100A GaAs wells separated by a 30A AlAs barrier. The thin barrier in our structures, gives rise to very strong inter-layer Coulombic interactions but in contrast to electron double quantum well samples, tunnelling between the two wells is very weak. This is due to the large effective mass of holes compared with electrons. It is possible to accurately control the total density of a sample and the relative occupancy of each well using front and back gates. A systematic study of the magnetoresistance properties of the p-type bi-layers, was carried out at low temperatures and in high magnetic fields, for samples covering a range of densities. Considerable care was required to obtain reliable results as the samples were extremely susceptible to electrical shock and were prone to drift in density slowly over time. With balanced wells, the very low tunnelling in the p-type bi-layer leads to a complete absence of all odd integers in both resistance and thermopower except for the v=1 state, ( v 1/2 in each layer) where v is the total Landau level filling factor. Unlike other FQHE features the v=1 state strengthens with increased density as inter-layer interactions increase in strength over intra-layer interactions. The state is also destroyed at a critical temperature, which is much lower than the measured activation temperature. This is taken as evidence for a finite temperature phase transition predicted for the bi-layer v=1. From the experimental observations, we construct a phase diagram for the state, which agree closely with theoretical predictions

  16. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  17. Angular and magnetic field dependences of critical current in irradiated YBaCuO single crystals

    Petrusenko, Yu.

    2010-01-01

    The investigation of mechanisms responsible for the current-carrying capability of irradiated high-temperature superconductors (HTSC) was realized. For the purpose, experiments were made to investigate the effect of point defects generated by high-energy electron irradiation on the critical temperature and the critical current in high-Tc superconducting single crystals YBa 2 Cu 3 O 7-x . The transport current density measured in HTSC single crystals YBa 2 Cu 3 O 7-x by the dc-method was found to exceed 80000 A/cm 2 . The experiments have demonstrated a more than 30-fold increase in the critical current density in single crystals irradiated with 2.5 MeV electrons to a dose of 3·10 18 el/cm 2 . Detailed studies were made into the anisotropy of critical current and the dependence of critical current on the external magnetic field strength in irradiated single crystals. A high efficiency of point defects as centers of magnetic vortex pinning in HTSC single crystals was first demonstrated.

  18. Carrier removal and defect behavior in p-type InP

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  19. Influence of {gamma} and neutron irradiation on the magnetic properties of Nd Fe B, Alnico, and Mn Al type permanent magnets

    Jipa, S; Setnescu, R; Kappel, W; Alexandru, St [Institute of Research and Design for Electrical Engineering, ICPE - Electrostatica, Splaiul Unirii 313, Sect. 3, R-74204 Bucharest (Romania)

    1996-12-31

    The influence of {gamma} and neutron irradiation on the magnetic properties of Nd Fe B, Alnico and Mn Al type permanent magnets was studied. With the used neutron energies and fluences, no changes in remanent induction values for Nd Fe B type permanent magnets are shown. For Alnico type permanent magnets the remanent induction changes are due to reversible variation of the magnetization directions. Only in case of Mn Al type permanent magnets irreversible structural changes take place, which lead to irreversible losses of induction. (author) 4 figs., 2 tabs., 12 refs. (author).

  20. Influence of γ and neutron irradiation on the magnetic properties of Nd Fe B, Alnico, and Mn Al type permanent magnets

    Jipa, S.; Setnescu, R.; Kappel, W.; Alexandru, St.

    1995-01-01

    The influence of γ and neutron irradiation on the magnetic properties of Nd Fe B, Alnico and Mn Al type permanent magnets was studied. With the used neutron energies and fluences, no changes in remanent induction values for Nd Fe B type permanent magnets are shown. For Alnico type permanent magnets the remanent induction changes are due to reversible variation of the magnetization directions. Only in case of Mn Al type permanent magnets irreversible structural changes take place, which lead to irreversible losses of induction. (author) 4 figs., 2 tabs., 12 refs. (author)

  1. Device for irradiation with electron and a magnetic lens for deviation of beams of charged particles, especially electrons

    Anderberg, B.

    1990-01-01

    An electron beam is sweeping aver the object while this is moved forward. In order to achieve a uniform irradiation and compensate for geometric errors, an additional magnetic lens is located immediately beneath the exposed area. The magnetic lens refract the electron beam in such a manner that the particle trajectories become parallel or slightly convergent after the lens. The lens consists of two parallel permanent bar magnets, preferably laminated magnets. (L.F.)

  2. study of irradiation effects on physical properties of some magnetic semiconductor materials

    Ahmed, I.A.A.

    2011-01-01

    The effect of gamma irradiation on the structure , magnetic and electrical properties of ferrite samples with chemical formula Mg x Cu 0.5-x Zn 0.5 Fe 2 O 4 (where x=0.0 , 0.2 and 0.4) were studied. The samples were prepared by conventional ceramic method.X-ray diffraction parameters, magnetization, initial permeability, electrical resistivity and dielectric constant were measured for the investigated samples before and after irradiation. Both magnetization and initial permeability were measured on toroidal samples used as transformer cores.The initial permeability (μ-i) was measured as a function of temperature at constant frequency of 10 khz and then curie temperatures (T c ) were determined. The Dc resistivity (ρ DC ) and the dielectric constant are measured on tablet form samples using the two probes technique.The real and imaginary parts of dielectric constant ε ' and ε '' were measured as a function of frequency within the range 45 Hz - 5 MHz before and after irradiation.

  3. Influence of the interface on the magnetic properties of NiZn ferrite thin films treated by proton irradiation

    Jiang, X.D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Guo, D.W. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhang, C.H., E-mail: c.h.zhang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Fan, X.L.; Chai, G.Z. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Xue, D.S., E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2015-09-01

    In order to systematically investigate the influence of the interface on the magnetic properties, polycrystalline NiZn ferrite thin films were irradiated with 60 keV proton in the dose range from 5 × 10{sup 12} to 5 × 10{sup 16} ions/cm{sup 2}. A non-destructive approach by proton irradiation was found to finely adjust the magnetic properties of polycrystalline NiZn ferrite thin films such as coercivity, perpendicular magnetic anisotropy as well as the effective g value. The coercivity is about 725 Oe for high proton dose ferrite, which is twice larger than the unirradiated one. The ferromagnetic resonance measurements indicated that perpendicular magnetic anisotropy and the effective g value increase with the irradiation dose. Our finding indicates that all modifications of these magnetic properties were associated with the change of interface due to the diffusion and the stress induced by proton irradiation. The change of the effective g value is a result of lattice expansion and the decrease of the magnetic dipole interaction between the columnar grains. This work provides a feasible way to tailor the magnetic properties of thin films by ion irradiation and promotes investigations for the stability of magnetic thin film devices in space or unclear radiation environments.

  4. Investigation of cryogenic irradiation influence on mechanical and physical properties of ITER magnetic system insulation materials

    Kozlov, A.V.; Scherbacov, E.N.; Dudchenko, N.A.; Shihalev, V.S.; Bedin, V.V.; Paltusov, N.A.; Korsunskiy, V.E.

    1998-01-01

    A set of methods of cryogenic irradiation influence test on mechanical and physical properties of insulation of ITER magnetic system are presented in this paper. Investigations are carried out without intermediate warming up of samples. A Russian insulating composite material was irradiated in the IVV-2M reactor. The ratio of energy absorbed by insulation materials from neutron irradiation to that from gamma irradiation can be varied from ∝(25:75)% to ∝(50:50)% in the reactor. The test results on the thermal expansion, thermal conductivity and gas evolution of the above material are presented. It was shown, that cryogenic irradiation up to the fluence ∝2 x 10 22 n/m 2 (E ≥ 0.1 MeV) leads to 0.27% linear size changes along layers of fiber-glass, the thermal conductivity coefficient is decreased on 15% at 100 k in perpendicular direction to fiber-glass plane, and thermal coefficient of linear expansion (TCLE) has anomalous temperature dependence. (orig.)

  5. Magnetic studies of current conduction and flux pinning in high-Tc cuprates: Virgin, irradiated, and oxygen deficient materials

    Thompson, J.R.; Civale, L.; Marwick, A.D.; Holtzberg, F.

    1992-09-01

    To increase the current density and pinning of magnetic flux in high temperature superconductors, defects with point-like and line-like geometries were created in controlled numbers using ion irradiation methods. Single crystals of Y 1 Ba 2 Cu 3 O 7 and Bi 2 Sr 2 Ca 1 Cu 2 0 8 superconductors were studied using dc magnetic methods. These studies showed greatly increased irreversibility in the vortex state magnetization and enhanced intragrain current density J c following irradiation. Linear defects, created by irradiation with energetic heavy ions, are particularly effective in pinning vortices at higher temperatures and magnetic fields. Further investigations of ''flux creep'' (the time dependence of magnetization) are well described by recent vortex glass and collective pinning theories. Complementary investigations have delineated the role of oxygen deficiency δ on pinning in aligned Y 1 Ba 2 Cu 3 O 7-δ materials

  6. Effect of a magnetic field on the fluorescence produced in irradiated anthracene solutions

    Dixon, R.S.; Sargent, F.P.; Lopata, V.J.; Gardy, E.M.; Brocklehurst, B.

    1977-01-01

    The effect of an applied magnetic field on the fluorescence from radiolytic ion recombination has been studied for anthracene in some hydrocarbon solvents. In pulse-irradiated anthracene in squalane, the fluorescence intensity following the pulse increases as a function of applied magnetic field in the range studied. At a constant magnetic field strength, the field-induced enhancement of the fluorescence intensity varies with time after the pulse. At high field strengths the enhancement reaches a maximum about 50 ns after the pulse. Similar effects are observed in cyclohexane but the enhancement is smaller than that in squalane. In benzene solutions the effect is extremely small. These findings are confirmed by observations in continuously gamma-irradiated solutions. 9,10-Dimethylanthracene gives a larger enhancement and anthracene-d 10 a smaller enhancement than the parent anthracene at high fields. The results are in general agreement with recent theoretical predictions based on the effect of a magnetic field on the loss of spin correlation of geminate ions pairs prior to recombination

  7. Irradiations under magnetic field. Measurement of resistivity sample irradiations between 100 and 500 deg C in a swimming-pool reactor

    Pauleve, J.; Marchand, A.; Blaise, A.

    1964-01-01

    An oven is described which enables the irradiation of small samples in the maximum neutron flux of a swimming-pool reactor of 15 MW (Siloe), at temperatures of between 100 and 500 deg.C defined to ± 0,5 deg.C, The oven is very simple from the technological point of view, and has a diameter of only 27 mm, This permits resistivity measurements to be carried out under irradiation in the reactor, or as another example, it enables irradiations in a magnetic field of 5000 oersteds, created by an immersed solenoid. (authors) [fr

  8. Air-electron stream interactions during magnetic resonance IGRT. Skin irradiation outside the treatment field during accelerated partial breast irradiation

    Park, Jong Min [Seoul National University Hospital, Department of Radiation Oncology, Seoul (Korea, Republic of); Seoul National University Hospital, Biomedical Research Institute, Seoul (Korea, Republic of); Seoul National University Medical Research Center, Institute of Radiation Medicine, Seoul (Korea, Republic of); Advanced Institutes of Convergence Technology, Robotics Research Laboratory for Extreme Environments, Suwon (Korea, Republic of); Shin, Kyung Hwan; Wu, Hong-Gyun [Seoul National University Hospital, Department of Radiation Oncology, Seoul (Korea, Republic of); Seoul National University Hospital, Biomedical Research Institute, Seoul (Korea, Republic of); Seoul National University Medical Research Center, Institute of Radiation Medicine, Seoul (Korea, Republic of); Seoul National University College of Medicine, Department of Radiation Oncology, Seoul (Korea, Republic of); Kim, Jung-in; Park, So-Yeon; Kim, Jin Ho [Seoul National University Hospital, Department of Radiation Oncology, Seoul (Korea, Republic of); Seoul National University Hospital, Biomedical Research Institute, Seoul (Korea, Republic of); Seoul National University Medical Research Center, Institute of Radiation Medicine, Seoul (Korea, Republic of); Jeon, Seung Hyuck [Seoul National University Hospital, Department of Radiation Oncology, Seoul (Korea, Republic of); Choi, Noorie [Seoul National University College of Medicine, Department of Radiation Oncology, Seoul (Korea, Republic of)

    2018-01-15

    To investigate and to prevent irradiation outside the treatment field caused by an electron stream in the air generated by the magnetic field during magnetic resonance image-guided accelerated partial breast irradiation (APBI). In all, 20 patients who received APBI with a magnetic resonance image-guided radiation therapy (MR-IGRT) system were prospectively studied. The prescription dose was 38.5 Gy in 10 fractions of 3.85 Gy and delivered with a tri-cobalt system (the ViewRay system). For each patient, primary plans were delivered for the first five fractions and modified plans with different gantry angles from those of the primary plan (in-treatment plans) were delivered for the remaining five fractions to reduce the skin dose. A 1 cm thick bolus was placed in front of the patient's jaw, ipsilateral shoulder, and arm to shield them from the electron stream. Radiochromic EBT3 films were attached to the front (towards the breast) and back (towards the head) of the bolus during treatment. Correlations between the measured values and the tumor locations, treatment times, and tumor sizes were investigated. For a single fraction delivery, the average areas of the measured isodoses of 14% (0.54 Gy), 12% (0.46 Gy), and 10% (0.39 Gy) at the front of the boluses were as large as 3, 10.4, and 21.4 cm{sup 2}, respectively, whereas no significant dose could be measured at the back of the boluses. Statistically significant but weak correlations were observed between the measured values and the treatment times. During radiotherapy for breast cancer with an MR-IGRT system, the patient must be shielded from electron streams in the air generated by the interaction of the magnetic field with the beams of the three-cobalt treatment unit to avoid unwanted irradiation of the skin outside the treatment field. (orig.) [German] Beim Einsatz eines Magnetresonanztomographie(MRT)-gefuehrten Bestrahlungsgeraets kann durch die Wechselwirkung von Magnetfeld und Strahlenquelle unerwuenscht

  9. Effect of gamma irradiation on the structural and magnetic properties of Co–Zn spinel ferrite nanoparticles

    Raut, Anil V.; Kurmude, D.V.; Shengule, D.R.; Jadhav, K.M.

    2015-01-01

    Highlights: • Co–Zn ferrite nanoparticles were examined before and after γ-irradiation. • Single phase cubic spinel structure of Co–Zn was confirmed by XRD data. • The grain size was reported in the range of 52–62 nm after γ-irradiation. • Ms, Hc, n B were reported to be increased after gamma irradiation. - Abstract: In this work, the structural and magnetic properties of Co 1−x Zn x Fe 2 O 4 (0.0 ≤ x ≤ 1.0) ferrite nanoparticles were studied before and after gamma irradiation. The as-synthesized samples of Co–Zn ferrite nanoparticles prepared by sol–gel auto-combustion technique were analysed by XRD which suggested the single phase; cubic spinel structure of the material. Crystal defects produced in the spinel lattice were studied before and after Co 60 γ-irradiation in a gamma cell with a dose rate of 0.1 Mrad/h in order to report the changes in structural and magnetic properties of the Co–Zn ferrite nanoparticles. The average crystallite size (t), lattice parameter (α) and other structural parameters of gamma-irradiated and un-irradiated Co 1−x Zn x Fe 2 O 4 spinel ferrite system was calculated from XRD data. The morphological characterizations were performed using scanning electron microscopy (SEM). The magnetic properties were measured using pulse field hysteresis loop tracer by applying magnetic field of 1000 Oe, and the analysis of data obtained revealed that the magnetic property such as saturation magnetization (Ms), coecivity (Hc), magneton number (n B ) etc. magnetic parameters were increased after irradiation

  10. Effect of gamma irradiation on the structural and magnetic properties of Co–Zn spinel ferrite nanoparticles

    Raut, Anil V., E-mail: nano9993@gmail.com [Vivekanand Arts, Sardar Dalipsingh Commerce and Science College, Aurangabad 431004, (M.S.) India (India); Kurmude, D.V. [Milind College of Science, Aurangabad 431004, (M.S.) India (India); Shengule, D.R. [Vivekanand Arts, Sardar Dalipsingh Commerce and Science College, Aurangabad 431004, (M.S.) India (India); Jadhav, K.M. [Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, (M.S.) India (India)

    2015-03-15

    Highlights: • Co–Zn ferrite nanoparticles were examined before and after γ-irradiation. • Single phase cubic spinel structure of Co–Zn was confirmed by XRD data. • The grain size was reported in the range of 52–62 nm after γ-irradiation. • Ms, Hc, n{sub B} were reported to be increased after gamma irradiation. - Abstract: In this work, the structural and magnetic properties of Co{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4} (0.0 ≤ x ≤ 1.0) ferrite nanoparticles were studied before and after gamma irradiation. The as-synthesized samples of Co–Zn ferrite nanoparticles prepared by sol–gel auto-combustion technique were analysed by XRD which suggested the single phase; cubic spinel structure of the material. Crystal defects produced in the spinel lattice were studied before and after Co{sup 60} γ-irradiation in a gamma cell with a dose rate of 0.1 Mrad/h in order to report the changes in structural and magnetic properties of the Co–Zn ferrite nanoparticles. The average crystallite size (t), lattice parameter (α) and other structural parameters of gamma-irradiated and un-irradiated Co{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4} spinel ferrite system was calculated from XRD data. The morphological characterizations were performed using scanning electron microscopy (SEM). The magnetic properties were measured using pulse field hysteresis loop tracer by applying magnetic field of 1000 Oe, and the analysis of data obtained revealed that the magnetic property such as saturation magnetization (Ms), coecivity (Hc), magneton number (n{sub B}) etc. magnetic parameters were increased after irradiation.

  11. Irradiation of Nd-Fe-B permanent magnets with APS bending magnet x-rays and 60Co γ-rays

    Alderman, J.; Job, P. K.; Puhl, J.

    2000-01-01

    The Advanced Photon Source (APS), as well as other third-generation synchrotron light sources, uses permanent magnets in the insertion devices to produce x-rays for scientific research. When placed in a high-energy storage ring, these permanent magnets are subjected to irradiation from synchrotron radiation, high-energy bremsstrahlung, and bremsstrahlung-produced photoneutrons. Previous investigations have exhibited varying degrees of degradation in the intensity of magnetization of these magnets due to irradiation from electron beams, 60 Co γrays, and high-energy neutrons. The APS specifically uses Nd-Fe-B permanent magnets in their insertion devices. Although no detectable radiation-induced demagnetization has been observed in the APS insertion devices so far, partial demagnetization has been observed in at least one insertion device at the European Synchrotron Radiation Facility (ESRF), where Nd-Fe-B permanent magnets are also used

  12. The investigation of the magnetic after-effect in iron-alpha after neutron irradiation at low temperature

    Mensch, W.

    1986-01-01

    The present thesis investigates the magnetic after-effect for neutron irradiated, polycrystalline iron-alpha for the temperature range 10 to 400 K by means of susceptibility measurements. 24 maxima of magnetic after-effect are found, which are related to different classes of defects. (BHO)

  13. Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films

    M. Stiller

    2016-12-01

    Full Text Available The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.

  14. WE-D-17A-04: Magnetically Focused Proton Irradiation of Small Volume Targets

    McAuley, G; Slater, J [Loma Linda University, Loma Linda, CA (United States); Wroe, A [Loma Linda University Medical Center, Loma Linda, CA (United States)

    2014-06-15

    Purpose: To explore the advantages of magnetic focusing for small volume proton irradiations and the potential clinical benefits for radiosurgery targets. The primary goal is to create narrow elongated proton beams of elliptical cross section with superior dose delivery characteristics compared to current delivery modalities (eg, collimated beams). In addition, more general beam shapes are also under investigation. Methods: Two prototype magnets consisting of 24 segments of samarium-cobalt (Sm2Co17) permanent magnetic material adhered into hollow cylinders were manufactured for testing. A single focusing magnet was placed on a positioning track on our Gantry 1 treatment table and 15 mm diameter proton beams with energies and modulation relevant to clinical radiosurgery applications (127 to 186 MeV, and 0 to 30 mm modulation) were delivered to a terminal water tank. Beam dose distributions were measured using a PTW diode detector and Gafchromic EBT2 film. Longitudinal and transverse dose profiles were analyzed and compared to data from Monte Carlo simulations analogous to the experimental setup. Results: The narrow elongated focused beam spots showed high elliptical symmetry indicating high magnet quality. In addition, when compared to unfocused beams, peak-to-entrance depth dose ratios were 11 to 14% larger (depending on presence or extent of modulation), and minor axis penumbras were 11 to 20% smaller (again depending on modulation) for focused beams. These results suggest that the use of rare earth magnet assemblies is practical and could improve dose-sparing of normal tissue and organs at risk while delivering enhanced dose to small proton radiosurgery targets. Conclusion: Quadrapole rare earth magnetic assemblies are a promising and inexpensive method to counteract particle out scatter that tends to degrade the peak to entrance performance of small field proton beams. Knowledge gained from current experiments will inform the design of a prototype treatment

  15. Neutron and gamma irradiation effects on organic insulating materials for fusion magnets

    Maurer, W.

    1985-10-01

    Available low-temperature neutron and gamma irradiation data for organic insulating materials are collected and compared with room temperature data. Only the most promising polymers in terms of mechanical strength for magnet insulation are taken into account. For characterization and comparison of different materials the 75% dose is used, i.e. the dose, where the mechanical strength is reduced by 25%, and 75% is retained. For room temperature special prepared polyimide and epoxy materials reinforced with glass fibre retained 75% of the mechanical strength up to a dose of 7x10 7 Gy. For 5 K irradiation the best epoxy material retained the 75% dose up to 1x10 7 Gy, the best polyimide material up to 1x10 8 Gy. (orig.) [de

  16. Posterior magnetic effect on the pure and doped Fe-Ni alloy under neutron irradiation

    Ferreira, Iris

    1974-01-01

    Polycrystalline specimens of unirradiated and neutron irradiated Fe-Ni alloys have been studied in the temperature range RT - 500 deg C. The study was carried out in pure (50-50) as well as in Si, A1, Cr and Mo doped samples. Initial magnetic permeability was measured in unirradiated (virgin)and in neutron irradiated samples, during isochronal and linear thermal treatments. The main results are: a magnetic After Effect (MAE) is detected in the temperature range 370 deg C - Tc, where Tc is the Curie Temperature. In this range an activation energy of 3.2 ± 0.2 eV was determined for the Cr doped Fe-Ni alloy (impurity content: 0.1%); measurements made in the irradiated samples, during a linear temperature treatment, show the existence of several MAE zones in the temperature range RT - Tc. The isochronal annealing experiments show that these MAE zones are accompanied by a decrease in the room temperature value of the magnetic permeability, for zones between RT and a certain temperature T 1 . Above this range there is a steep increase in the room temperature permeability. Activation energies were determined for pure and Mo-doped (0.1%) samples for the first MAE zone (50 deg C - 120 deg C). The values obtained 1.25 - 0.08 eV and 1.42 ± 0.09 eV, respectively; the impurity - doped samples show a different behaviour relative to the pure ones: samples with low impurity content (0.1% and 0.5% of Si, Al or Mo) present an enhancement in the amplitude and also an overlapping of the diffusion stages. On the other hand, samples with higher impurity content (2 and 4% of Mo) show a decrease in these amplitudes. (author)

  17. SU-D-304-02: Magnetically Focused Proton Irradiation of Small Field Targets

    McAuley, GA; Slater, JM; Slater, JD; Wroe, AJ

    2015-01-01

    Purpose: To investigate the use of magnetic focusing for small field proton irradiations. It is hypothesized that magnetic focusing will provide significant dose distribution benefits over standard collimated beams for fields less than 10 mm diameter. Methods: Magnets consisting of 24 segments of radiation hard samarium-cobalt adhered into hollow cylinders were designed and manufactured. Two focusing magnets were placed on a positioning track on our Gantry 1 treatment table. Proton beams with energies of 127 and 157 MeV, 15 and 30 mm modulation, and 8 mm initial diameters were delivered to a water tank using single-stage scattering. Depth dose distributions were measured using a PTW PR60020 diode detector and transverse profiles were measured with Gafchromic EBT3 film. Monte Carlo simulations were also performed - both for comparison with experimental data and to further explore the potential of magnetic focusing in silica. For example, beam spot areas (based on the 90% dose contour) were matched at Bragg depth between simulated 100 MeV collimated beams and simulated beams focused by two 400 T/m gradient magnets. Results: Preliminary experimental results show 23% higher peak to entrance dose ratios and flatter spread out Bragg peak plateaus for 8 mm focused beams compared with uncollimated beams. Monte Carlo simulations showed 21% larger peak to entrance ratios and a ∼9 fold more efficient dose to target delivery compared to spot-sized matched collimated beams. Our latest results will be presented. Conclusion: Our results suggest that rare earth focusing magnet assemblies could reduce skin dose and beam number while delivering dose to nominally spherical radiosurgery targets over a much shorter time compared to unfocused beams. Immediate clinical applications include those associated with proton radiosurgery and functional radiosurgery of the brain and spine, however expanded treatment sites can be also envisaged

  18. SU-D-304-02: Magnetically Focused Proton Irradiation of Small Field Targets

    McAuley, GA; Slater, JM [Loma Linda University, Loma Linda, CA (United States); Slater, JD; Wroe, AJ [Loma Linda University Medical Center, Loma Linda, CA (United States)

    2015-06-15

    Purpose: To investigate the use of magnetic focusing for small field proton irradiations. It is hypothesized that magnetic focusing will provide significant dose distribution benefits over standard collimated beams for fields less than 10 mm diameter. Methods: Magnets consisting of 24 segments of radiation hard samarium-cobalt adhered into hollow cylinders were designed and manufactured. Two focusing magnets were placed on a positioning track on our Gantry 1 treatment table. Proton beams with energies of 127 and 157 MeV, 15 and 30 mm modulation, and 8 mm initial diameters were delivered to a water tank using single-stage scattering. Depth dose distributions were measured using a PTW PR60020 diode detector and transverse profiles were measured with Gafchromic EBT3 film. Monte Carlo simulations were also performed - both for comparison with experimental data and to further explore the potential of magnetic focusing in silica. For example, beam spot areas (based on the 90% dose contour) were matched at Bragg depth between simulated 100 MeV collimated beams and simulated beams focused by two 400 T/m gradient magnets. Results: Preliminary experimental results show 23% higher peak to entrance dose ratios and flatter spread out Bragg peak plateaus for 8 mm focused beams compared with uncollimated beams. Monte Carlo simulations showed 21% larger peak to entrance ratios and a ∼9 fold more efficient dose to target delivery compared to spot-sized matched collimated beams. Our latest results will be presented. Conclusion: Our results suggest that rare earth focusing magnet assemblies could reduce skin dose and beam number while delivering dose to nominally spherical radiosurgery targets over a much shorter time compared to unfocused beams. Immediate clinical applications include those associated with proton radiosurgery and functional radiosurgery of the brain and spine, however expanded treatment sites can be also envisaged.

  19. Gamma irradiation testing of prototype ITER in-vessel magnetic pick-up coils

    Vermeeren, Ludo; Leysen, Willem

    2013-01-01

    Highlights: ► We tested five prototype ITER in-vessel coils up to a gamma dose of 72 MGy. ► Before and after irradiation thermal tests were also performed from 30 °C till 130 °C. ► The continuity resistances and the insulation resistances were continuously monitored. ► The observed behavior of all coils was satisfactory in all conditions. ► For the further design the mechanical robustness should be taken into account. -- Abstract: To fulfill the requirements for ITER in-vessel magnetic diagnostics, several coil prototypes have been developed, aiming at minimizing the disturbing effects of temperature gradients and radiation induced phenomena. As a first step in the radiation resistance testing of these prototypes, an in-situ high dose rate gamma radiation test on a selection of prototypes was performed. The aim of this test was to get a first experimental feedback regarding the behavior of the pick-up coil prototypes under radiation. Five prototypes (a coil wound with glass-insulated copper wire, two LTCC coils and two HTCC coils) were irradiated at a dose rate of 46 kGy/h up to a total dose of 72 MGy and at a temperature of 50 °C. During the irradiation, the continuity resistances and the insulation resistances were continuously measured. Before and after irradiation reference data were recorded as a function of temperature (from 30 °C to 130 °C). This paper includes the results of the temperature and irradiation tests and a discussion of the behavior of the prototype coils in terms of electrical and mechanical properties

  20. Neutron-irradiation facilities at the Intense Pulsed Neutron Source-I for fusion magnet materials studies

    Brown, B.S.; Blewitt, T.H.

    1982-01-01

    The decommissioning of reactor-based neutron sources in the USA has led to the development of a new generation of neutron sources that employ high-energy accelerators. Among the accelerator-based neutron sources presently in operation, the highest-flux source is the Intense Pulsed Neutron Source (IPNS), a user facility at Argonne National Laboratory. Neutrons in this source are produced by the interaction of 400 to 500 MeV protons with either of two 238 U target systems. In the Radiation Effects Facility (REF), the 238 U target is surrounded by Pb for neutron generatjion and reflection. The REF has three separate irradiation thimbles. Two thimbles provide irradiation temperatures between that of liquid He and several hundred degrees centigrade. The third thimble operates at ambient temperature. The large irradiation volume, the neutron spectrum and flux, the ability to transfer samples without warm up, and the dedication of the facilities during the irradiation make this ideally suited for radiation damage studies on components for superconducting fusion magnets. Possible experiments for fusion magnet materials are discussed on cyclic irradiation and annealing of stabilizers in a high magnetic field, mechanical tests on organic insulation irradiated at 4 K, and superconductors measured in high fields after irradiation

  1. Neutron irradiation effects on superconducting and stabilizing materials for fusion magnets

    Maurer, W.

    1984-05-01

    Available low-temperature neutron irradiation data for the superconductors NbTi and Nb 3 Sn and the stabilization materials Cu and Al are collected and maximum tolerable doses for these materials are defined. A neutron flux in a reactor of about 10 9 n/cm 2 s at the magnet position is expected. However, in fusion experiments the flux can be higher by an order of magnitude or more. The energy spectrum is similar to a fission reactor. A fluence of about 10 18 n/cm 2 results during the lifetime of a fusion magnet (about 20 full power years). At this fluence and energy spectrum no severe degradation of the superconducting properties of NbTi and Nb 3 Sn will occur. But the radiation-induced resistivity is for Cu about a twentieth of the room temperature resistivity and a tenth for Al. (orig.) [de

  2. Magnetic, thermal and luminescence properties in room-temperature nanosecond electron-irradiated various metal oxide nanopowders

    Sokovnin, S. Yu; Balezin, M. E.; Il’ves, V. G.

    2018-03-01

    By means of pulsed electron beam evaporation in vacuum of targets non-magnetic, in bulk state, Al2O3 and YSZ (ZrO2-8% Y2O3) oxides, magnetic nanopowders (NPs) with a high specific surface were produced. The NPs were subsequently irradiated in air by electrons with energy of 700 keV, using a URT-1 accelerator for 15 and 30 minutes. The magnetic, thermal, and pulsed cathodoluminescence (PCL) characteristics of NPs were measured before and after irradiation. It was established that the electron irradiation non-monotonically changes the magnetization of the pristine samples. To the contrary, a clear correlation between the intensity of PCL and the irradiation doses is found in the oxides. There was a decrease in the intensity of PCL after irradiation. Luminescent and thermal properties reflect the transformation of structural defects in NPs more strongly after the exposure to a pulsed electron beam in comparison with corresponding changes of the NPs magnetic response.

  3. Spin dynamics in the single molecule magnet Ni4 under microwave irradiation

    de Loubens, Gregoire

    2009-03-01

    Quantum mechanical effects such as quantum tunneling of magnetization (QTM) and quantum phase interference have been intensively studied in single molecule magnets (SMMs). These materials have also been suggested as candidates for qubits and are promising for molecular spintronics. Understanding decoherence and energy relaxation mechanisms in SMMs is then both of fundamental interest and important for the use of SMMs in applications. Interestingly, the single-spin relaxation rate due to direct process of a SMM embedded in an elastic medium can be derived without any unknown coupling constant [1]. Moreover, nontrivial relaxation mechanisms are expected from collective effects in SMM single crystals, such as phonon superradiance or phonon bottleneck. In order to investigate the spin relaxation between the two lowest lying spin-states of the S=4 single molecule magnet Ni4, we have developed an integrated sensor that combines a microstrip resonator and micro-Hall effect magnetometer on a chip [2]. This sensor enables both real time studies of magnetization dynamics under pulse irradiation as well as simultaneous measurements of the absorbed power and magnetization changes under continuous microwave irradiation. The latter technique permits the study of small deviations from equilibrium under steady state conditions, i.e. small amplitude cw microwave irradiation. This has been used to determine the energy relaxation rate of a Ni4 single crystal as a function of temperature at two frequencies, 10 and 27.8 GHz. A strong temperature dependence is observed below 1.5 K, which is not consistent with a direct spin-phonon relaxation process. The data instead suggest that the spin relaxation is dominated by a phonon bottleneck at low temperatures and occurs by an Orbach process involving excited spin-levels at higher temperatures [3]. Experimental results will be compared with detailed calculations of the relaxation rate using the density matrix equation with the relaxation

  4. On Allosteric Modulation of P-Type Cu+-ATPases

    Mattle, Daniel; Sitsel, Oleg; Autzen, Henriette Elisabeth

    2013-01-01

    P-type ATPases perform active transport of various compounds across biological membranes and are crucial for ion homeostasis and the asymmetric composition of lipid bilayers. Although their functional cycle share principles of phosphoenzyme intermediates, P-type ATPases also show subclass...... of intramembranous Cu+ binding, and we suggest an alternative role for the proposed second site in copper translocation and proton exchange. The class-specific features demonstrate that topological diversity in P-type ATPases may tune a general energy coupling scheme to the translocation of compounds with remarkably...

  5. Ohmic Contacts to P-Type SiC

    Crofton, John

    2000-01-01

    Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

  6. High-energy electron irradiation of NdFeB permanent magnets: Dependence of radiation damage on the electron energy

    Bizen, Teruhiko; Asano, Yoshihiro; Marechal, Xavier-Marie; Seike, Takamitsu; Aoki, Tsuyoshi; Fukami, Kenji; Hosoda, Naoyasu; Yonehara, Hiroto; Takagi, Tetsuya; Hara, Toru; Tanaka, Takashi; Kitamura, Hideo

    2007-01-01

    High-energy electron-beam bombardment of Nd 2 Fe 14 B-type permanent magnets induces radiation damage characterized by a drop in the magnetic field. Experiments carried out at the SPring-8 booster synchrotron, with 4, 6, and 8 GeV electrons, show that the drop in magnetic field is energy dependent. Electromagnetic shower simulations suggest that most of the radiation damage happens in a small region around the irradiation axis, and that the contribution of neutrons with large scattering angles or with low energies to the magnetic field change is small

  7. High-energy electron irradiation of NdFeB permanent magnets: Dependence of radiation damage on the electron energy

    Bizen, Teruhiko [JASRI SPring-8, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)]. E-mail: bizen@spring8.or.jp; Asano, Yoshihiro [JASRI SPring-8, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); RIKEN SPring-8 Center, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Marechal, Xavier-Marie [JASRI SPring-8, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Seike, Takamitsu [JASRI SPring-8, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Aoki, Tsuyoshi [JASRI SPring-8, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Fukami, Kenji [JASRI SPring-8, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Hosoda, Naoyasu [JASRI SPring-8, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Yonehara, Hiroto [JASRI SPring-8, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Takagi, Tetsuya [JASRI SPring-8, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Hara, Toru [RIKEN SPring-8 Center, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Tanaka, Takashi [RIKEN SPring-8 Center, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Kitamura, Hideo [RIKEN SPring-8 Center, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2007-05-11

    High-energy electron-beam bombardment of Nd{sub 2}Fe{sub 14}B-type permanent magnets induces radiation damage characterized by a drop in the magnetic field. Experiments carried out at the SPring-8 booster synchrotron, with 4, 6, and 8 GeV electrons, show that the drop in magnetic field is energy dependent. Electromagnetic shower simulations suggest that most of the radiation damage happens in a small region around the irradiation axis, and that the contribution of neutrons with large scattering angles or with low energies to the magnetic field change is small.

  8. A magnetic resonance imaging study on changes in rat mandibular bone marrow and pulp tissue after high-dose irradiation

    Lee, Wan; Lee, Byung Do [Dept. of Oral and Maxillofacial Radiology and Wonkwang Dental Research Institute, College of Dentistry, Wonkwang University, Iksan (Korea, Republic of); Lee, Kang Kyoo [Dept. of Radiation Oncology, School of Medicine, Wonkwang University, Iksan (Korea, Republic of); Koh, Kwang Joon [Dept. of Oral and Maxillofacial Radiology, School of Dentistry and Institute of Oral Bioscience, Chonbuk National University, Jeonju (Korea, Republic of)

    2014-03-15

    This study was designed to evaluate whether magnetic resonance imaging (MRI) is appropriate for detecting early changes in the mandibular bone marrow and pulp tissue of rats after high-dose irradiation. The right mandibles of Sprague-Dawley rats were irradiated with 10 Gy (Group 1, n=5) and 20 Gy (Group 2, n=5). Five non-irradiated animals were used as controls. The MR images of rat mandibles were obtained before irradiation and once a week until week 4 after irradiation. From the MR images, the signal intensity (SI) of the mandibular bone marrow and pulp tissue of the incisor was interpreted. The MR images were compared with the histopathologic findings. The SI of the mandibular bone marrow had decreased on T2-weighted MR images. There was little difference between Groups 1 and 2. The SI of the irradiated groups appeared to be lower than that of the control group. The histopathologic findings showed that the trabecular bone in the irradiated group had increased. The SI of the irradiated pulp tissue had decreased on T2-weighted MR images. However, the SI of the MR images in Group 2 was high in the atrophic pulp of the incisor apex at week 2 after irradiation. These patterns seen on MRI in rat bone marrow and pulp tissue were consistent with histopathologic findings. They may be useful to assess radiogenic sclerotic changes in rat mandibular bone marrow.

  9. 50 MeV, Li"3"+ - ion irradiation effect on magnetic ordering of Y"3"+ - substituted yttrium iron garnet

    Sharma, P. U.; Zankat, K. B.; Dolia, S. N.; Modi, K. B.

    2016-01-01

    This communication presents the effect of non-magnetic Y"3"+ ions substitution for magnetic Fe"3"+ ions and 50 MeV, Li"3"+ ion irradiation (fluence: 5 × 10"1"3 ions/cm"2) on magnetic ordering and Neel temperature of Y_3_+_xFe_5_-_xO_1_2 (x = 0.0, 0.2, 0.4 and 0.6) garnet system, studied by means of X-ray powder diffractometry and thermal variation of low field (0.5 Oe) ac susceptibility measurements. The un-irradiated compositions exhibit normal ferrimagnetic behavior with decrease in transition temperature (T_N) on increasing Y"3"+-concentration (x). The irradiated counterparts are characterized by tailing effect indicative of non-uniform effect of irradiation and lower value of T_N. The results have been discussed based on the weakening of magnetic exchange interactions and cumulative effect of redistribution of cations and fractional creation of localized paramagnetic centers resulting from swift heavy ion irradiation. The Neel temperatures and exchange integrals have been calculated theoretically.

  10. Magnetization measurements and XMCD studies on ion irradiated iron oxide and core-shell iron/iron-oxide nanomaterials

    Kaur, Maninder; Qiang, You; Jiang, Weilin; Pearce, Carolyn; McCloy, John S.

    2014-12-02

    Magnetite (Fe3O4) and core-shell iron/iron-oxide (Fe/Fe3O4) nanomaterials prepared by a cluster deposition system were irradiated with 5.5 MeV Si2+ ions and the structures determined by x-ray diffraction as consisting of 100% magnetite and 36/64 wt% Fe/FeO, respectively. However, x-ray magnetic circular dichroism (XMCD) indicates similar surfaces in the two samples, slightly oxidized and so having more Fe3+ than the expected magnetite structure, with XMCD intensity much lower for the irradiated core-shell samples indicating weaker magnetism. X-ray absorption spectroscopy (XAS) data lack the signature for FeO, but the irradiated core-shell system consists of Fe-cores with ~13 nm of separating oxide crystallite, so it is likely that FeO exists deeper than the probe depth of the XAS (~5 nm). Exchange bias (Hex) for both samples becomes increasingly negative as temperature is lowered, but the irradiated Fe3O4 sample shows greater sensitivity of cooling field on Hex. Loop asymmetries and Hex sensitivities of the irradiated Fe3O4 sample are due to interfaces and interactions between grains which were not present in samples before irradiation as well as surface oxidation. Asymmetries in the hysteresis curves of the irradiated core/shell sample are related to the reversal mechanism of the antiferromagnetic FeO and possibly some near surface oxidation.

  11. Synthesis of p-type GaN nanowires.

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-09-21

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

  12. The development of p-type silicon detectors for the high radiation regions of the LHC

    Hanlon, M.D.L.

    1998-04-01

    This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17±1 is reported, along with a spatial resolution of 14.6±0.2 μm. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22±0.23) x 10 14 per cm 2 . An account of the measurement program is presented along with results on the changes in the effective doping concentration (N eff ) with irradiation and the changes in bulk current. Changes in the effective doping concentration and leakage current for high resistivity p-type material under irradiation were found to be similar to to that of n-type material. Values of α=(3.30±0.08) x 10 -17 A cm -1 for the leakage current parameter and g c =(1.20±0.05)x10 -2 cm -1 for the effective dopant introduction rate were found for this material. The epitaxial material did not perform better than the float zone material for the range of doses studied. Surprising results were obtained for highly irradiated p-type diodes illuminated on the ohmic side with an α-source, in that signals were observed well below the full depletion voltage. The processing that had been used to fabricate the test structures and the initial prototype that was studied in the test beam was based on the process used to fabricate devices on n-type material. Presented in this thesis are the modifications that were made to the process, which centred on the oxidation

  13. p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

    Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

    2013-01-01

    Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm 2 V −1 s −1 and a hole concentration of 1.67 × 10 17  cm −3 , respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application

  14. Activities towards p-type doping of ZnO

    Brauer, G; Kuriplach, J; Ling, C C; Djurisic, A B

    2011-01-01

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  15. Activities towards p-type doping of ZnO

    Brauer, G [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany); Kuriplach, J [Department of Low Temperature Physics, Charles University, V Holetovickach 2, CZ-18000 Prague (Czech Republic); Ling, C C; Djurisic, A B, E-mail: g.brauer@fzd.de [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

    2011-01-10

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  16. Study of the irradiation damages on the magnetic properties of FeNi alloys

    Sciani, V.; Lucki, G.

    1979-01-01

    Linear and isothermal annealing were made, before, during and after neutron irradiation in the IEAR-1 reactor, between 400 and 500 0 C in argon atmosphere, for the following samples: 1) FeNi (50-50% at.); 2) FeNiMo (50-50% at + 50 ppm); 3) FeNiCr (49,95-49,95-0,1% at.); 4) FeNiCr (49,75-49,75-0,5% at.). The initial permeability occurred together with the Later Magnetic Effect (LME) which allows the determination of time constants, activation energies and Curie temperatures. The vacancies supersaturation was quantitatively evaluated showing that the LME can be used as an effective method of selecting materials. Some comments are made about sample n 0 4 which showed pronounced anomalies in the initial permeability. (Author) [pt

  17. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    Wang, Zhenwei

    2018-03-11

    Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

  18. Preparation and characterization of natural polymers as stabilizer for magnetic nanoparticles by gamma irradiation

    Eid, M.

    2012-01-01

    A Highly stable and uniformly distributed magnetic nanoparticles have been obtained onto hydroxyethyl methacrylate (HEMA)-Agar- Fe 3 O 4 (HAF), and HEMA-Gelatin- Fe 3 O 4 (HGF) networks via gamma irradiation and loading technique. The swelling property of the prepared hydrogels in bidistilled water and different ph's was studied and the results showed that, the swelling percent of the plain hydrogel was found to be higher for all different compositions. The morphology and structure of the prepared hydrogels and dispersion of the magnetite nanoparticles in the hydrogel network were examined by Scanning electron microscopy (SEM) and Infrared spectroscopy (FT-IR). The particle size of the formed magnetite nanoparticles has been confirmed by Dynamic light scattering (DLS) and Transmission electron microscope (TEM), and it was found to be smaller in loading technique than irradiation technique. The HEMA-Gelatin-Fe 3 O 4 has higher particle size than HEMA-Agar-Fe 3 O 4 (HAF). Finally, the drug loading capacities of the magnetite nanoparticles and their releasing dependence on different ph were investigated with doxorubicin hydrochloride (DOX) as an anticancer drug model.

  19. Influence of an external magnetic field on damage by self-ion irradiation in Fe90Cr10 alloy

    Fernando José Sánchez

    2016-12-01

    Full Text Available The effect of an external magnetic field (B=0.5 T on Fe90Cr10 specimens during Fe ion irradiation, has been investigated by means of Conversion Electron Mössbauer Spectroscopy (CEMS. The analysis has revealed significant differences in the average hyperfine magnetic field (=0.3 T between non-irradiated and irradiated samples as well as between irradiations made with B (w/ B and without B (w/o B. It is considered that these variations can be due to changes in the local environment around the probe nuclei (57Fe; where vacancies and Cr distribution play a role. The results indicate that the Cr distribution in the neighbourhood of the iron atoms could be changed by the application of an external field. This would imply that an external magnetic field may be an important parameter to take into account in predictive models for Cr behaviour in Fe–Cr alloys, and especially in fusion conditions where intense magnetic fields are required for plasma confinement.

  20. P-Type Silicon Strip Sensors for the Future CMS Tracker

    The Tracker Group of the CMS Collaboration

    2016-01-01

    The upgrade to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at CMS. Based on these results, the collaboration has chosen to use n-in-p type strip and macro-pixel sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

  1. Development and Processing of p-type Oxide Thermoelectric Materials

    Wu, NingYu; Van Nong, Ngo

    The main aim of this research is to investigate and develop well-performing p-type thermoelectric oxide materials that are sufficiently stable at high temperatures for power generating applications involving industrial processes. Presently, the challenges facing the widespread implementation...

  2. Effect of 1.2 MeV argon ions irradiation on magnetic properties of ZnO

    Mishra, D.K.; Mohapatra, Jyoshnarani; Mahato, Banashree; Kumar, P.; Mitra, Amitav; Singh, S.K.; Kanjilal, D.

    2013-01-01

    Room temperature ferromagnetism in 1.2 MeV argon ions irradiated polycrystalline ZnO has been observed. The magnetic contribution in form of saturation magnetization is higher in sample irradiated with ion fluence of 1 × 10 15 ions/cm 2 . However, annealing of the defects at higher fluences of 5 × 10 15 ions/cm 2 reduce the magnetic contribution in comparison to the magnetic contribution of the lower fluences. The X-ray diffraction reveals that the degree of crystallinity decreases with the increase of ion fluences upto 1 × 10 15 ions/cm 2 and further it increases at a fluence of 5 × 10 15 ions/cm 2 . The inhomogeneous arrangement of grains and changes in their sizes with increasing ion fluences decrease the magnetic ordering of the system. The electron probe microstructure analyses and micro-Raman spectra of irradiated samples show in-homogeneity in zinc and oxygen ratio which is one of the causes to show ferromagnetism.

  3. Synthesis of magnetic graphene oxide–TiO2 and their antibacterial properties under solar irradiation

    Chang, Ying-Na; Ou, Xiao-Ming; Zeng, Guang-Ming; Gong, Ji-Lai; Deng, Can-Hui; Jiang, Yan; Liang, Jie; Yuan, Gang-Qiang; Liu, Hong-Yu; He, Xun

    2015-01-01

    Highlights: • Magnetic graphene oxide–TiO 2 (MGO–TiO 2 ) composites were synthesized. • MGO–TiO 2 had excellent antibacterial activity toward Escherichia coli. • MGO–TiO 2 could effectively and rapidly separate from aqueous solution. • Carbonates and phosphates significantly reduced the bacterial survival rate. - Abstract: Titanium dioxide (TiO 2 ) has been intensively researched and increasingly used as antibacterial agent, but it suffers from separation inconvenience. Its effective removal from water after reaction while maintaining its high antibacterial activity becomes necessary. In this work, it was the first time the magnetic graphene oxide–TiO 2 (MGO–TiO 2 ) composites were prepared through a simple synthesis method. The results indicated that MGO–TiO 2 exhibited a good antibacterial activity against Escherichia coli. MGO–TiO 2 was found to almost completely inactivate the E. coli within 30 min under solar irradiation. The effect of inorganic ions present in E. coli suspension was also evaluated. Compared with other ions, HCO 3 − and HPO 4 2− had a greater influence on the antibacterial property

  4. Observation of magnetically anisotropic defects during stage I recovery in nickel after low-temperature electron irradiation

    Forsch, K.; Hemmerich, J.; Knoll, H.; Lucki, G.

    1974-01-01

    The measurement of defect-induced changes of magnetic anisotropy in a nickel single crystal after low-temperature electron irradiation was undertaken. A dynamic measuring method was used after reorienting a certain fraction of the radiation-induced defects in an external magnetic field of 5 kOe. In the temperature range of recovery stage I sub(C,D,E) (45 to 60 k) the crystallographic direction dependence of defect-induced anisotropy could be determined. The results show that in this temperature range the (100) split interstitial is mobile and able to reorient. The obtained data are further discussed with respect to existing information on magnetic after effect and resistivity annealing in electron-irradiated nickel

  5. The separated electric and magnetic field responses of luminescent bacteria exposed to pulsed microwave irradiation

    Williams, Catrin F., E-mail: williamscf@cardiff.ac.uk [School of Engineering, Cardiff University, Queen' s Buildings, Newport Road, Cardiff, CF24 3AA Wales (United Kingdom); School of Biosciences, Cardiff University, Main Building, Cathays Park, Cardiff, CF10 3AT Wales (United Kingdom); Geroni, Gilles M.; Pirog, Antoine; Lees, Jonathan; Porch, Adrian [School of Engineering, Cardiff University, Queen' s Buildings, Newport Road, Cardiff, CF24 3AA Wales (United Kingdom); Lloyd, David [School of Biosciences, Cardiff University, Main Building, Cathays Park, Cardiff, CF10 3AT Wales (United Kingdom)

    2016-08-29

    Electromagnetic fields (EMFs) are ubiquitous in the digital world we inhabit, with microwave and millimetre wave sources of non-ionizing radiation employed extensively in electronics and communications, e.g., in mobile phones and Wi-Fi. Indeed, the advent of 5G systems and the “internet of things” is likely to lead to massive densification of wireless networks. Whilst the thermal effects of EMFs on biological systems are well characterised, their putative non-thermal effects remain a controversial subject. Here, we use the bioluminescent marine bacterium, Vibrio fischeri, to monitor the effects of pulsed microwave electromagnetic fields, of nominal frequency 2.5 GHz, on light emission. Separated electric and magnetic field effects were investigated using a resonant microwave cavity, within which the maxima of each field are separated. For pulsed electric field exposure, the bacteria gave reproducible responses and recovery in light emission. At the lowest pulsed duty cycle (1.25%) and after short durations (100 ms) of exposure to the electric field at power levels of 4.5 W rms, we observed an initial stimulation of bioluminescence, whereas successive microwave pulses became inhibitory. Much of this behaviour is due to thermal effects, as the bacterial light output is very sensitive to the local temperature. Conversely, magnetic field exposure gave no measurable short-term responses even at the highest power levels of 32 W rms. Thus, we were able to detect, de-convolute, and evaluate independently the effects of separated electric and magnetic fields on exposure of a luminescent biological system to microwave irradiation.

  6. The separated electric and magnetic field responses of luminescent bacteria exposed to pulsed microwave irradiation

    Williams, Catrin F.; Geroni, Gilles M.; Pirog, Antoine; Lloyd, David; Lees, Jonathan; Porch, Adrian

    2016-08-01

    Electromagnetic fields (EMFs) are ubiquitous in the digital world we inhabit, with microwave and millimetre wave sources of non-ionizing radiation employed extensively in electronics and communications, e.g., in mobile phones and Wi-Fi. Indeed, the advent of 5G systems and the "internet of things" is likely to lead to massive densification of wireless networks. Whilst the thermal effects of EMFs on biological systems are well characterised, their putative non-thermal effects remain a controversial subject. Here, we use the bioluminescent marine bacterium, Vibrio fischeri, to monitor the effects of pulsed microwave electromagnetic fields, of nominal frequency 2.5 GHz, on light emission. Separated electric and magnetic field effects were investigated using a resonant microwave cavity, within which the maxima of each field are separated. For pulsed electric field exposure, the bacteria gave reproducible responses and recovery in light emission. At the lowest pulsed duty cycle (1.25%) and after short durations (100 ms) of exposure to the electric field at power levels of 4.5 W rms, we observed an initial stimulation of bioluminescence, whereas successive microwave pulses became inhibitory. Much of this behaviour is due to thermal effects, as the bacterial light output is very sensitive to the local temperature. Conversely, magnetic field exposure gave no measurable short-term responses even at the highest power levels of 32 W rms. Thus, we were able to detect, de-convolute, and evaluate independently the effects of separated electric and magnetic fields on exposure of a luminescent biological system to microwave irradiation.

  7. The separated electric and magnetic field responses of luminescent bacteria exposed to pulsed microwave irradiation

    Williams, Catrin F.; Geroni, Gilles M.; Pirog, Antoine; Lees, Jonathan; Porch, Adrian; Lloyd, David

    2016-01-01

    Electromagnetic fields (EMFs) are ubiquitous in the digital world we inhabit, with microwave and millimetre wave sources of non-ionizing radiation employed extensively in electronics and communications, e.g., in mobile phones and Wi-Fi. Indeed, the advent of 5G systems and the “internet of things” is likely to lead to massive densification of wireless networks. Whilst the thermal effects of EMFs on biological systems are well characterised, their putative non-thermal effects remain a controversial subject. Here, we use the bioluminescent marine bacterium, Vibrio fischeri, to monitor the effects of pulsed microwave electromagnetic fields, of nominal frequency 2.5 GHz, on light emission. Separated electric and magnetic field effects were investigated using a resonant microwave cavity, within which the maxima of each field are separated. For pulsed electric field exposure, the bacteria gave reproducible responses and recovery in light emission. At the lowest pulsed duty cycle (1.25%) and after short durations (100 ms) of exposure to the electric field at power levels of 4.5 W rms, we observed an initial stimulation of bioluminescence, whereas successive microwave pulses became inhibitory. Much of this behaviour is due to thermal effects, as the bacterial light output is very sensitive to the local temperature. Conversely, magnetic field exposure gave no measurable short-term responses even at the highest power levels of 32 W rms. Thus, we were able to detect, de-convolute, and evaluate independently the effects of separated electric and magnetic fields on exposure of a luminescent biological system to microwave irradiation.

  8. n/p-Type changeable semiconductor TiO{sub 2} prepared from NTA

    Li Qiuye; Wang Xiaodong; Jin Zhensheng, E-mail: zhenshengjin@henu.edu.cn; Yang Dagang; Zhang Shunli; Guo Xinyong; Yang Jianjun; Zhang Zhijun [Henan University, Key Laboratory of Special Functional Materials (China)

    2007-10-15

    A novel kind of nano-sized TiO{sub 2} (anatase) was obtained by high-temperature (400-700 deg. C) dehydration of nanotube titanic acid (H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2}, NTA). The high-temperature (400-700 deg. C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation ({lambda}{>=} 420nm, E{sub photon}=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light ({lambda}{>=} 365nm, E{sub photon}=3.40 eV)

  9. High performance p-type half-Heusler thermoelectric materials

    Yu, Junjie; Xia, Kaiyang; Zhao, Xinbing; Zhu, Tiejun

    2018-03-01

    Half-Heusler compounds, which possess robust mechanical strength, good high temperature thermal stability and multifaceted physical properties, have been verified as a class of promising thermoelectric materials. During the last two decades, great progress has been made in half-Heusler thermoelectrics. In this review, we summarize some representative work of p-type half-Heusler materials, the thermoelectric performance of which has been remarkably enhanced in recent years. We introduce the features of the crystal and electronic structures of half-Heusler compounds, and successful strategies for optimizing electrical and thermal transport in the p-type RFeSb (R  =  V, Nb, Ta) and MCoSb (M  =  Ti, Zr, Hf) based systems, including band engineering, the formation of solid solutions and hierarchical phonon scattering. The outlook for future research directions of half-Heusler thermoelectrics is also presented.

  10. Modification of structural and magnetic properties of soft magnetic multi-component metallic glass by 80 MeV {sup 16}O{sup 6+} ion irradiation

    Kane, S.N., E-mail: kane_sn@yahoo.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Shah, M.; Satalkar, M.; Gehlot, K. [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Kulriya, P.K.; Avasthi, D.K. [Inter-University Accelerator Centre, P.O. Box No. 10502, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sinha, A.K. [Raja Ramanna Centre for Advanced Technology, P.O. CAT, Indore 452013 (India); Modak, S.S. [Physics Department, Jaypee University of Eng. & Tech., A-B Road, Raghogarh, Guna 473226 (India); Ghodke, N.L.; Reddy, V.R. [UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India); Varga, L.K. [RISSPO, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

    2016-07-15

    Effect of 80 MeV {sup 16}O{sup 6+} ion irradiation in amorphous Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy is reported. Electronic energy loss induced modifications in the structural and, magnetic properties were monitored by synchrotron X-ray diffraction (SXRD), Mössbauer and, magnetic measurements. Broad amorphous hump seen in SXRD patterns reveals the amorphous nature of the studied specimens. Mössbauer measurements suggest that: (a) alignment of atomic spins within ribbon plane, (b) changes in average hyperfine field suggests radiation-induced decrease in the inter atomic distance around Mössbauer (Fe) atom, (c) hyperfine field distribution confirms the presence of non-magnetic elements (e.g. – B, P, C) in the first near-neighbor shell of the Fe atom, thus reducing its magnetic moment, and (d) changes in isomer shift suggests variation in average number of the metalloid near neighbors and their distances. Minor changes in soft magnetic behavior – watt loss and, coercivity after an irradiation dose of 2 × 10{sup 13} ions/cm{sup 2} suggests prospective application of Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy as core material in accelerators (radio frequency cavities).

  11. Experimental and theoretical basis of agricultural plant immunostimulation with regard to pathogenic fungi by magnetic field and He-Ne laser irradiation

    Belski, Alexey I.; Chivanov, Vadym D.

    1996-09-01

    Spring barley, winter wheat and maize seeds were subjected to the action of He-Ne laser irradiation having a low intensity in the visible region of the spectrum (628-640 nm) in conjunction with magnetic fields. The following results were obtained: laser irradiation with magnetic fields induced activation of the natural plant defence/immune systems gave the harvest crop level increased to about 50- 300 percent; a correlation was established between the rate of the fungal pathogens growth and the stimulation of plant immunity after the seeds had been treated with laser irradiation and magnetic field.

  12. Effects of proton irradiation on structure of NdFeB permanent magnets studied by X-ray diffraction and X-ray absorption fine structure

    Yang, L.; Zhen, L.; Xu, C.Y.; Sun, X.Y.; Shao, W.Z.

    2011-01-01

    The effects of proton irradiation on the structure of NdFeB permanent magnet were investigated by X-ray diffraction and X-ray absorption fine structure (XAFS). The results reveal that proton irradiation has no effect on the long-range structure, but significantly affects the atomic local structure of the NdFeB magnet. The alignment degree of the magnet decreases and the internal stress of the lattice increases after proton irradiation. XAFS results show that the coordination number of Fe-Nd in the first neighboring coordination shell of the Fe atoms decreases and the disorder degree increases.

  13. Effects of proton irradiation on structure of NdFeB permanent magnets studied by X-ray diffraction and X-ray absorption fine structure

    Yang, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, L., E-mail: lzhen@hit.edu.c [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xu, C.Y.; Sun, X.Y.; Shao, W.Z. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2011-01-15

    The effects of proton irradiation on the structure of NdFeB permanent magnet were investigated by X-ray diffraction and X-ray absorption fine structure (XAFS). The results reveal that proton irradiation has no effect on the long-range structure, but significantly affects the atomic local structure of the NdFeB magnet. The alignment degree of the magnet decreases and the internal stress of the lattice increases after proton irradiation. XAFS results show that the coordination number of Fe-Nd in the first neighboring coordination shell of the Fe atoms decreases and the disorder degree increases.

  14. Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

    Pacifico, Nicola; Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael; Militaru, Otilia

    2011-01-01

    Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280Ωcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8×10 15 /cm 2 . The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

  15. Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

    Pacifico, Nicola, E-mail: nicola.pacifico@cern.ch [CERN, Geneva (Switzerland); Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael [CERN, Geneva (Switzerland); Militaru, Otilia [UCL, Louvain (Belgium)

    2011-12-01

    Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280{Omega}cm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8 Multiplication-Sign 10{sup 15}/cm{sup 2}. The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

  16. Argon Ion Irradiation Effect on the Magnetic Properties of Fe-Al2O3 Nano Granular Film

    Setyo Purwanto

    2014-10-01

    Full Text Available We studied the effect of Argon (Ar ion irradiation on Fe-Al2O3 nanogranular thin film. X-ray diffraction (XRD patterns show that the ion dose might promote the growth of the Fe2O3 phase from an amorphous phase to a crystalline phase. The magnetic and magnetoresistance properties were investigated using a vibrating sample magnetometer (VSM and a four point probe (FPP. The results suggest that percolation concentration occurred at the 0.55 Fe volume fraction and with a maximum magnetoresistance (MR ratio of 3%. The present MR ratio was lower than that of previous results, which might be related to the existence of the α-Fe2O3 phase promoted by Ar ion irradiation. CEMS spectra show ion irradiation induces changes from superparamagnetic characteristics to ferromagnetic ones, which indicates the spherical growth of Fe particles in the Al2O3 matrix.

  17. Detection of irradiated beef by nuclear magnetic resonance lipid profiling combined with chemometric techniques.

    Zanardi, Emanuela; Caligiani, Augusta; Padovani, Enrico; Mariani, Mario; Ghidini, Sergio; Palla, Gerardo; Ianieri, Adriana

    2013-02-01

    The combination of (1)H NMR lipid profiling with multivariate analysis was applied to differentiate irradiated and non-irradiated beef. Two pattern recognition chemometric procedures, stepwise linear discriminant analysis (sLDA) and artificial neural networks (ANNs), provided a successful discrimination between the groups investigated. sLDA allowed the classification of 100% of the samples into irradiated or non-irradiated beef groups; the same result was obtained by ANNs using the 1 kGy irradiation dose as discriminant value suggested by the network. Furthermore, sLDA allowed the classification of 81.9% of the beef samples according to the irradiation dose (0, 2.5, 4.5 and 8 kGy). (1)H NMR lipid profiling, coupled with multivariate analysis may be considered a suitable and promising screening tool for the rapid detection of irradiated meat in official control of food. Copyright © 2012 Elsevier Ltd. All rights reserved.

  18. Effects of Nd:YAG laser irradiation on structural, morphological, cation distribution and magnetic properties of nanocrystalline CoFe{sub 2}O{sub 4}

    Mane, Maheshkumar L., E-mail: mane.maheshkumar@hotmail.com [Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (M.S.) 431004 (India); Dhage, Vinod N. [Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (M.S.) 431004 (India); Sundar, R.; Ranganathan, K.; Oak, S.M. [Solid State Laser Division, Raja Ramanna Center for Advanced Technology, Indore (M.P.) (India); Shengule, D.R.; Jadhav, K.M. [Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (M.S.) 431004 (India)

    2011-08-01

    The cobalt ferrite nanoparticles of 20 nm size were synthesized by sol-gel auto-combustion technique. The samples were irradiated with Nd:YAG laser to understand the effects of irradiation on structural, cation distribution and magnetic properties. The virgin and irradiated samples were characterized by X-ray diffraction technique. The X-ray diffraction studies at room temperature shows that defects were created in the lattice after irradiation which causes effects on structural, cation distribution and magnetic properties. The energy dispersive analysis of X-rays (EDAX) showed the chemical composition is as per the expected stichiometry. The lattice constant observed from XRD data for virgin and irradiated samples shows increasing trend after irradiation. Cation distribution was investigated by using X-ray diffraction method. We observe decrease in magnetization of the samples after irradiation. The observed reduction in the saturation magnetization after irradiation can be understood on the basis of the partial formation of paramagnetic centers and rearrangement of cations in the lattice.

  19. Defects induced magnetic transition in Co doped ZnS thin films: Effects of swift heavy ion irradiations

    Patel, Shiv P., E-mail: shivpoojanbhola@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India); Pivin, J.C. [CSNSM, IN2P3-CNRS, Batiment 108, F-91405 Orsay Campus (France); Patel, M.K; Won, Jonghan [Materials Science and Technology Division, MST-8, P.O.Box 1663, Mail Stop G755, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Chandra, Ramesh [Nanoscience Laboratory, IIC, Indian Institute of Technology, Roorkee 247667 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Lokendra [Physics Department, University of Allahabad, Allahabad 211002 (India)

    2012-07-15

    The effect of swift heavy ions (SHI) on magnetic ordering in ZnS thin films with Co ions substituted on Zn sites is investigated. The materials have been synthesized by pulsed laser deposition on substrates held at 600 Degree-Sign C for obtaining films with wurtzite crystal structure and it showed ferromagnetic ordering up to room temperature with a paramagnetic component. 120 MeV Ag ions have been used at different fluences of 1 Multiplication-Sign 10{sup 11} ions/cm{sup 2} and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2} for SHI induced modifications. The long range correlation between paramagnetic spins on Co ions was destroyed by irradiation and the material became purely paramagnetic. The effect is ascribed to the formation of cylindrical ion tracks due to the thermal spikes resulting from electron-phonon coupling. - Highlights: Black-Right-Pointing-Pointer Effect of swift heavy ions on magnetic ordering in Co doped ZnS thin films are presented. Black-Right-Pointing-Pointer Magnetization in the pristine films is composed of ferromagnetic and paramagnetic components. Black-Right-Pointing-Pointer The films become purely paramagnetic after swift heavy ions irradiation. Black-Right-Pointing-Pointer The magnetic transition is ascribed to the formation of ion track (or cylindrical defects) due to the thermal spikes.

  20. Technology development of p-type microstrip detectors with radiation hard p-spray isolation

    Pellegrini, G.; Fleta, C.; Campabadal, F.; Diez, S.; Lozano, M.; Rafi, J.M.; Ullan, M.

    2006-01-01

    A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. The best technological options for the p-spray implant were found by using a simulation software package and dedicated calibration runs. Using the optimized technology, detectors have been fabricated in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance measurements before and after irradiation. The average full depletion voltage measured on the non-irradiated detectors was V FD =41±3 V, while the leakage current density for the microstrip devices at V FD +20 V was 400 nA/cm 2

  1. Electronic structure of p type Delta doped systems

    Gaggero S, L.M.; Perez A, R.

    1998-01-01

    We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

  2. Elucidating Functional Aspects of P-type ATPases

    Autzen, Henriette Elisabeth

    2015-01-01

    and helped enlighten how thapsigargin, a potent inhibitor of SERCA1a, depends on a water mediated hydrogen bond network when bound to SERCA1a. Furthermore, molecular dynamics (MD) simulations of the same P-type ATPase were used to assess a long-standing question whether cholesterol affects SERCA1a through...... similar to that of the wild type (WT) protein. The discrepancy between the newly determined crystal structure of LpCopA and the functional manifestations of the missense mutation in human CopA, could indicate that LpCopA is insufficient in structurally elucidating the effect of disease-causing mutations...... in the human CopA proteins. MD simulations, which combine coarse-grained (CG) and atomistic procedures, were set up in order to elucidate mechanistic implications exerted by the lipid bilayer on LpCopA. The MD simulations of LpCopA corroborated previous and new in vivo activity data and showed...

  3. The development of p-type silicon detectors for the high radiation regions of the LHC

    Hanlon, M D L

    1998-01-01

    This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17+-1 is reported, along with a spatial resolution of 14.6+-0.2 mu m. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22+-0.23) x 10 sup 1 sup 4 per cm sup 2. An account of the measurement program is presented along with results on the changes in the effective doping concentration (N sub e sub f sub f) with irradiat...

  4. Controlling magnetic domain wall motion in the creep regime in He+-irradiated CoFeB/MgO films with perpendicular anisotropy

    Herrera Diez, L.; García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D.; Lamperti, A.; Mantovan, R.; Ocker, B.

    2015-01-01

    This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He + ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H −1∕4 behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H dep . In turn, H* ≈ H dep is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion

  5. Controlling magnetic domain wall motion in the creep regime in He{sup +}-irradiated CoFeB/MgO films with perpendicular anisotropy

    Herrera Diez, L., E-mail: liza.herrera-diez@ief.u-psud.fr; García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D. [Institut d' Electronique Fondamentale, Université Paris-Sud, UMR CNRS 8622, 91405 Orsay (France); Lamperti, A.; Mantovan, R. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate (MB) (Italy); Ocker, B. [Singulus Technology AG, Hanauer Landstrasse 103, 63796 Kahl am Main (Germany)

    2015-07-20

    This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

  6. OBSERVATION OF MAGNETIC DOMAINS IN IRRADIATED TRANSITION METALS BY HIGH VOLTAGE ELECTRON MICROSCOPY

    Ono , F.; Jakubovics , J.; Maeta , H.

    1988-01-01

    The effect of irradiation on the movement of domain walls was studied in ferromagnetic transition metals by using a high voltage electron microscope. In iron, a domain wall became easily movable at a 300 kV irradiation. The mobility was less affected in cobalt, while in nickel the effect was the greatest.

  7. Photocatalytic degradation of methylene blue on magnetically separable MgFe2O4 under visible light irradiation

    Shahid, Muhammad; Jingling, Liu; Ali, Zahid; Shakir, Imran; Warsi, Muhammad Farooq; Parveen, Riffat; Nadeem, Muhammad

    2013-01-01

    A magnetically separable single-phase MgFe 2 O 4 photocatalyst with a spinel crystal structure was synthesized by using the solid-state reaction method. The formation of spinel structure is confirmed by X-ray diffraction and Fourier transform infrared spectroscopy. The magnetic measurements showed that the photocatalyst material can be separated from water when an external magnetic field is added and redispersed into water solution after the external magnetic field is eliminated. It is one of the promising photocatalysts for waste water treatment. The photocatalytic activity of MgFe 2 O 4 was investigated by using the photo-decomposition of methylene blue dye under visible light. The photoelectrochemical property of the MgFe 2 O 4 was studied by measuring their photocurrent–potential behavior in 1 M NaOH electrolyte under AM 1.5100 mW cm −2 illumination. - Graphical abstract: Highly efficient magnetically separable MgFe 2 O 4 photocatalyst for organic based impurities decomposition as well as for the production of H 2 gas was synthesized and characterized successfully (a) MgFe 2 O 4 photocatalyst in polluted water, (b) The photocatalyst (MgFe 2 O 4 ) is being attracted toward magnetic field for separation, (c) Hysteresis loop of MgFe 2 O 4 showing magnetic behavior. Highlights: ► New photocatalyst working in the visible range have been synthesized by facile cheap route. ► MgFe 2 O 4 photocatalyst showed well defined magnetically separable behavior. ► Excellent water splitting characteristics to produce H 2 was observed under visible light irradiation

  8. Influence of neutron irradiation on the magnetic properties of the Fe Ni pure alloy and with impurities of Si and Mo

    Lucki, George

    1971-01-01

    Hysteresis loop, Initial permeability and Curie Temperature measurements were conducted on several pure and polluted (with Si and Mo) Fe Ni 50-50% at. alloys. Isochronal annealings were performed between 25 deg 65 deg C, on each composition in three different ways: quenched (anisotropic) samples; quenched and irradiated samples; quenched irradiated samples annealed with saturating magnetic field. The experiment showed a sharp decrease in all parameters of the polluted alloys. Fast neutron irradiation results indicated that the magnetic properties are affected by the defects created during irradiation. The effect of thermal treatment, magnetic annealing and irradiation is greatest in anisotropic alloys. It is considered that magnetic annealing introduces a uniaxial anisotropy that tends to increase the remanence and hence the squareness of the hysteresis loop; but an increase in both remanence and coercivity was measured even in absence of the magnetic field. Magnetic after effect has been detected and a simple model for the diffusion of defects is presented. Many models have been proposed to explain the resultant properties, the most feasible being that based upon short-range ordering, proposed by Neel and Taniguchi, together with the interesting hypothesis of Heidenreich and Nesbitt. (author)

  9. Graphene supported silver@silver chloride & ferroferric oxide hybrid, a magnetically separable photocatalyst with high performance under visible light irradiation

    Zhong, Suting; Jiang, Wei, E-mail: superfine_jw@126.com; Han, Mei; Liu, Gongzong; Zhang, Na; Lu, Yue

    2015-08-30

    Graphical abstract: - Highlights: • The composites were synthesized via a facile and effective process. • Plenty of Fe{sub 3}O{sub 4} and Ag@AgCl nanoparticles are deposited on the reduced graphene oxide nanosheets. • The catalyst exhibited an enhanced photocatalytic performance and magnetic property. • The catalyst is stable under the visible light irradiation. - Abstract: A stable magnetic separable plasmonic photocatalyst was successfully fabricated by grafting silver@silver chloride (Ag@AgCl) and ferroferric oxide (Fe{sub 3}O{sub 4}) nanoparticles on graphene sheets. The composite exhibited high activity degrading methylene blue (MB) and rhodamine B (RB) under visible light irradiation: decomposition 97.4% of MB in 100 min and 97.9% of RB in 120 min. The enhanced photocatalytic activities can be attributed to synergistic effect between Ag@AgCl and graphene: the effective charge transfer from Ag@AgCl to graphene thus promotes the separation of electron–hole pairs. Moreover, the excellent magnetic property gives a more convenient way to recycle the photocatalysts.

  10. P-type diamond stripper foils for tandem ion accelerators

    Phelps, A.W.; Koba, R.

    1989-01-01

    The authors are developing a stripper foil composed of a p-type diamond membrane. This diamond stripper foil should have a significantly longer lifetime than any conventional stripper foil material. To be useful for stripper foils, the boron-doped blue diamond films must be thinner than 0.8 μm and pore-free. Two methods are compared for their ability to achieve a high nucleation areal density on a W substrate. Some W substrates were first coated with think layer of boron (≤20 nm) in order to enhance nucleation. Other W substrates were scratched with submicron diamond particles. A schematic diagram of the stripper foil is shown. Stripper foils were created by etching away the central area of W substrates. The diamond membrane was then supported by an annulus of W. Tungsten was selected as a ring-support material because of its high electrical and thermal conductivity, relatively low thermal expansion, and proven suitability as a substrate for diamond CVD. Warping or fracture of the diamond film after substrate etch-back was investigated

  11. Photoconduction spectroscopy of p-type GaSb films

    Shura, M.W., E-mail: Megersa.Shura@live.nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Wagener, V.; Botha, J.R.; Wagener, M.C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 {mu}m. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley-Read-Hall lifetime and maximum value of the surface recombination velocity.

  12. P type porous silicon resistivity and carrier transport

    Ménard, S.; Fèvre, A.; Billoué, J.; Gautier, G.

    2015-01-01

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P % ) was found to be the major contributor to the PS resistivity (ρ PS ). ρ PS increases exponentially with P % . Values of ρ PS as high as 1 × 10 9 Ω cm at room temperature were obtained once P % exceeds 60%. ρ PS was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ PS . Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P % lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P % overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices

  13. Electronic processes in uniaxially stressed p-type germanium

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  14. Photoconduction spectroscopy of p-type GaSb films

    Shura, M.W.; Wagener, V.; Botha, J.R.; Wagener, M.C.

    2012-01-01

    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 μm. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley–Read–Hall lifetime and maximum value of the surface recombination velocity.

  15. Magnetic quadrupole resonance of electron irradiated aluminium. Electric field gradients surrounding the vacancies and interstitials

    Andreani, R.; Minier, M.; Minier, C.

    Some aluminium samples were irradiated at 20K with 3MeV electrons. The quadrupole absorption spectra have been obtained after irradiation and annealing, at 50K, 150K and 300K. Coupled conductivity measurements allowed the evolution in defect concentration to be studied. This new method makes it possible to characterize the presence of vacancies independently of the simultaneous existence of bivacancies, interstitials and clusters [fr

  16. P-type zinc oxide spinels: application to transparent conductors and spintronics

    Stoica, Maria; S Lo, Cynthia

    2014-01-01

    We report on the electronic and optical properties of two theoretically predicted stable spinel compounds of the form ZnB 2 O 4 , where B = Ni or Cu; neither compound has been previously synthesized, so we compare them to the previously studied p-type ZnCo 2 O 4 spinel. These new materials exhibit spin polarization, which is useful for spintronics applications, and broad conductivity maxima near the valence band edge that indicate good p-type dopability. We show that 3d electrons on the octahedrally coordinated Zn atom fall deep within the valence band and do not contribute significantly to the electronic structure near the band edge of the material, while the O 2p and tetrahedrally coordinated B 3d electrons hybridize broadly in the shallow valence states, resulting in increasing curvature (i.e., decreased electron effective mass) of valence bands near the band edge. In particular, ZnCu 2 O 4 exhibits high electrical conductivities in the p-doping region near the valence band edge that, at σ=2×10 4  S cm −1 , are twice the maximum found for ZnCo 2 O 4 , a previously synthesized compound in this class of materials. This material also exhibits ferromagnetism in all of its most stable structures, which makes it a good candidate for further study as a dilute magnetic semiconductor. (paper)

  17. Response function of a p type - HPGe detector

    Lopez-Pino, Neivy; Cabral, Fatima Padilla; D'Alessandro, Katia; Maidana, Nora Lia; Vanin, Vito Roberto

    2011-01-01

    The response function of a HPGe detector depends on Ge crystal dimensions and dead layers thicknesses; most of them are not given by the manufacturers or change with detector damage from neutrons or contact with the atmosphere and therefore must be experimentally determined. The response function is obtained by a Monte-Carlo simulation procedure based on the Ge crystal characteristics. In this work, a p-type coaxial HPGe detector with 30% efficiency, manufactured in 1989, was investigated. The crystal radius and length and the inner hole dimensions were obtained scanning the capsule both in the radial and axial directions using 4 mm collimated beams from 137 Cs, 207 Bi point sources placed on a x-y table in steps of 2,00 mm. These dimensions were estimated comparing the experimental peak areas with those obtained by simulation using several hole configurations. In a similar procedure, the frontal dead layer thickness was determined using 2 mm collimated beams of the 59 keV gamma-rays from 241 Am and 81 keV from 133 Ba sources hitting the detector at 90 deg and 45 deg with respect to the capsule surface. The Monte Carlo detector model included, besides the crystal, hole and capsules sizes, the Ge dead-layers. The obtained spectra were folded with a gaussian resolution function to account for electronic noise. The comparison of simulated and experimental response functions for 4 mm collimated beams of 60 Co, 137 Cs, and 207 Bi points sources placed at distances of 7, 11 and 17 cm from the detector end cap showed relative deviations of about 10% in general and below 10% in the peak. The frontal dead layer thickness determined by our procedure was different from that specified by the detector manufacturer. (author)

  18. Membrane Targeting of P-type ATPases in Plant Cells

    Harper, Jeffrey F.

    2004-01-01

    How membrane proteins are targeted to specific subcellular locations is a very complex and poorly understood area of research. Our long-term goal is to use P-type ATPases (ion pumps), in a model plant system Arabidopsis, as a paradigm to understand how members of a family of closely related membrane proteins can be targeted to different subcellular locations. The research is divided into two specific aims. The first aim is focused on determining the targeting destination of all 10 ACA-type calcium pumps (Arabidopsis Calcium ATPase) in Arabidopsis. ACAs represent a plant specific-subfamily of plasma membrane-type calcium pumps. In contrast to animals, the plant homologs have been found in multiple membrane systems, including the ER (ACA2), tonoplast (ACA4) and plasma membrane (ACA8). Their high degree of similarity provides a unique opportunity to use a comparative approach to delineate the membrane specific targeting information for each pump. One hypothesis to be tested is that an endomembrane located ACA can be re-directed to the plasma membrane by including targeting information from a plasma membrane isoform, ACA8. Our approach is to engineer domain swaps between pumps and monitor the targeting of chimeric proteins in plant cells using a Green Fluorescence Protein (GFP) as a tag. The second aim is to test the hypothesis that heterologous transporters can be engineered into plants and targeted to the plasma membrane by fusing them to a plasma membrane proton pump. As a test case we are evaluating the targeting properties of fusions made between a yeast sodium/proton exchanger (Sod2) and a proton pump (AHA2). This fusion may potentially lead to a new strategy for engineering salt resistant plants. Together these aims are designed to provide fundamental insights into the biogenesis and function of plant cell membrane systems

  19. The impact of pulsed irradiation upon neutron activation calculations for inertial and magnetic fusion energy power plants

    Latkowski, J.F.; Sanz, J.; Vujic, J.L.

    1996-01-01

    Inertial fusion energy (IFE) and magnetic fusion energy (MFE) power plants will probably operate in a pulsed mode. The two different schemes, however, will have quite different time periods. Typical repetition rates for IFE power plants will be 1-5 Hz. MFE power plants will ramp up in current for about 1 hour, shut down for several minutes, and repeat the process. Traditionally, activation calculations for IFE and MFE power plants have assumed continuous operation and used either the ''steady state'' (SS) or ''equivalent steady state'' (ESS) approximations. It has been suggested recently that the SS and ESS methods may not yield accurate results for all radionuclides of interest. The present work expands that of Sisolak, et al. by applying their formulae to conditions which might be experienced in typical IFE and MFE power plants. In addition, complicated, multi-step reaction/decay chains are analyzed using an upgraded version of the ACAB radionuclide generation/depletion code. Our results indicate that the SS method is suitable for application to MFE power plant conditions. We also find that the ESS method generates acceptable results for radionuclides with half-lives more than a factor of three greater than the time between pulses. For components that are subject to 0.05 Hz (or more frequent) irradiation (such as coolant), use of the ESS method is recommended. For components or materials that are subject to less frequent irradiation (such as high-Z target materials), pulsed irradiation calculations should be used

  20. Picosecond intersubband hole relaxation in p-type quantum wells

    Xu, Z.; Fauchet, P.M.; Rella, C.W.; Schwettman, H.A.

    1995-01-01

    We report the first direct measurement of the relaxation time of holes in p-type quantum wells using tunable, subpicosecond mid-infrared laser pulses in a pump-probe arrangement. The QW layers consisted of 50 In 0.5 Ga 0.5 As/Al 0.5 Ga 0.5 As periods. The In 0.5 Ga 0.5 As well was 4 nm wide and the Al 0.5 Ga 0.5 As barrier was 8 nm wide. The dopant concentration was 10 19 CM -3 which corresponds to a sheet density of 1.2 x 10 13 CM -2 . The room temperature IR spectrum showed a 50 meV wide absorption peak at 5.25 μm (220 meV). This energy agrees with the calculated n=1 heavy hole to n=1 light hole transition energy of 240 meV (150 meV for strain and 90 meV for confinement). The large absorption width results from hole-hole scattering and the difference in dispersion relations between the two subbands. The equal-wavelength pump-probe transmission measurements were performed using the Stanford free electron laser (FEL). The FEL pulses were tuned between 4 and 6 μ m and their duration was less than 1 ps. The measurements were performed as a function of temperature, pump wavelength and intensity (from 0.3 to 10 GW/cm 2 ). In all our experiments, we find an increase of transmission (decrease of absorption or bleaching) following photopumping, which recovers as a single exponential with a time constant (relaxation time) of the order of 1 picosecond. The maximum change in transmission is linear with pump 2 intensity below 1 GW/cm 2 and saturates to ∼3% with a saturation intensity I sat of 3 GW/cm 2 . As the saturation regime is entered, the relaxation time increases from 0.8 ps to 1.8 ps. This relaxation time depends on the temperature T: it increases from 0.8 ps to 1.3 ps as T decreases from 300 K to 77 K. Finally, when we tune the laser through the absorption band, the magnitude of the signal changes but its temporal behavior does not change, within the accuracy of the measurements

  1. Magnetic collimation of fast electrons in specially engineered targets irradiated by ultraintense laser pulses

    Cai Hongbo; Zhu Shaoping; Wu Sizhong; Chen Mo; Zhou Cangtao; He, X. T.; Yu Wei; Nagatomo, Hideo

    2011-01-01

    The efficient magnetic collimation of fast electron flow transporting in overdense plasmas is investigated with two-dimensional collisional particle-in-cell numerical simulations. It is found that the specially engineered targets exhibiting either high-resistivity-core-low-resistivity-cladding structure or low-density-core-high-density-cladding structure can collimate fast electrons. Two main mechanisms to generate collimating magnetic fields are found. In high-resistivity-core-low-resistivity-cladding structure targets, the magnetic field at the interfaces is generated by the gradients of the resistivity and fast electron current, while in low-density-core-high-density-cladding structure targets, the magnetic field is generated by the rapid changing of the flow velocity of the background electrons in transverse direction (perpendicular to the flow velocity) caused by the density jump. The dependences of the maximal magnetic field on the incident laser intensity and plasma density, which are studied by numerical simulations, are supported by our analytical calculations.

  2. Nd: YAG laser irradiation effects on structural and magnetic properties of Ni1+xZrxFe2-2xO4 nanoparticles

    Saraf, Tukaram S.; Kounsalye, Jitendra S.; Birajdar, Shankar D.; Shamkuwar, N. R.

    2018-05-01

    The effect of 112 mJ Nd: YAG laser irradiation on structural, morphological, infrared and magnetic properties of Ni1+xZrxFe2-2xO4 spinel ferrite nanoparticles has been systematically investigated in the present work. The sol-gel auto combustion synthesis method was successfully executed for the synthesis of the present system. All the samples were characterized by X-ray diffraction technique (XRD), scanning electron microscopy (SEM) and infrared spectroscopy (IR) technique. The magnetic properties of the present samples were measured by pulse field hysteresis loop technique. All the properties were measured for laser irradiated samples as well, to understand the effect of irradiation on the properties. The single-phase cubic spinel structure was confirmed by X-ray diffraction patterns of all samples and the disordered structure was observed for irradiated samples. The two principle absorption bands in IR spectra also confirm the formation of the spinel structure. Spherical and agglomerated morphology was observed for Zr4+ substituted nickel ferrite, whereas scratched morphology was observed for the irradiated samples. The grain size confirms the nanocrystalline nature, the crystallite size also evident the same. The magnetic parameters decreased after Zr4+ ion doping and strongly influenced by the irradiation.

  3. Band Engineering Small Bandgap p-Type Semiconductors: Investigations of their Optical and Photoelectrochemical Properties

    Zoellner, Brandon

    Mixed-metal oxides containing Mn(II), Cu(I), Ta(V), Nb(V), and V(V) were investigated for their structures and properties as new p-type semiconductors and in the potential applications involving the photocatalytic conversion of water into hydrogen and oxygen. Engineering of the bandgaps was achieved by combining metal cations that have halffilled (Mn 3d5) or filled (Cu 3d10) d-orbitals together with metal cations that have empty (V/Nb/Ta 3/4/5 d0) d-orbitals. The research described herein focuses on the synthesis, optical, electronic, and photocatalytic properties of the metal-oxide semiconductors MnV2O6, Cu3VO 4, CuNb1-xTaxO3, and Cu5(Ta1-xNbx)11O30. Powder X-ray diffraction was used to probe their phase purity as well as atomic-level crystallographic details, i.e. shifts of lattice parameters, chemical compositions, and changes in local bonding environments. Optical measurements revealed visible-light bandgap sizes of ˜1.17 eV (Cu3VO4), ˜1.45 eV (MnV2O6), ˜1.89-1.97 eV (CuNb1-xTa xO3), and ˜1.97-2.50 eV (Cu5(Ta1-xNb x)11O30). The latter two were found to systematically vary as a function of composition. Electrochemical impedance spectroscopy measurements of MnV2O6 and Cu3VO 4 provided the first experimental characterization of the energetic positions of the valence and conduction bands with respect to the water oxidation and reduction potentials, as well as confirmed the p-type nature of each semiconductor. The valence and conduction band energies were found to be suitable for driving either one or both of the water-splitting half reaction (i.e. 2H+ → H2 and 2H2O → O2 + 4H+). Photoelectrochemical measurements on polycrystalline films of the Cu(I)-based semiconductors under visible-light irradiation produced cathodic currents indicative of p-type semiconductor character and chemical reduction at their surfaces in the electrolyte solution. The stability of the photocurrents was increased by the addition of CuO oxide particles either externally deposited or

  4. Surface chemistry of a hydrogenated mesoporous p-type silicon

    Media, El-Mahdi, E-mail: belhadidz@tahoo.fr; Outemzabet, Ratiba, E-mail: oratiba@hotmail.com

    2017-02-15

    Highlights: • Due to its large specific surface porous silicon is used as substrate for drug therapy and biosensors. • We highlight the evidency of the contribution of the hydrides (SiHx) in the formation of the porous silicon. • The responsible species in the porous silicon formation are identified and quantified at different conditions. • By some chemical treatments we show that silicon surface can be turn from hydrophobic to hydrophilic. - Abstract: The finality of this work is devoted to the grafting of organic molecules on hydrogen passivated mesoporous silicon surfaces. The study would aid in the development for the formation of organic monolayers on silicon surface to be exploited for different applications such as the realisation of biosensors and medical devices. The basic material is silicon which has been first investigated by FTIR at atomistic plane during the anodic forward and backward polarization (i.e. “go” and “return”). For this study, we applied a numerical program based on least squares method to infrared absorbance spectra obtained by an in situ attenuated total reflection on p-type silicon in diluted HF electrolyte. Our numerical treatment is based on the fitting of the different bands of IR absorbance into Gaussians corresponding to the different modes of vibration of molecular groups such as siloxanes and hydrides. An adjustment of these absorbance bands is done systematically. The areas under the fitted bands permit one to follow the intensity of the different modes of vibration that exist during the anodic forward and backward polarization in order to compare the reversibility of the phenomenon of the anodic dissolution of silicon. It permits also to follow the evolution between the hydrogen silicon termination at forward and backward scanning applied potential. Finally a comparison between the states of the initial and final surface was carried out. We confirm the presence of clearly four and three distinct vibration modes

  5. Neutron irradiation effects on magnetic properties of iron-nickel Invar alloys

    Morita, H.; Tanji, Y.; Hiroyoshi, H.; Nakagawa, Y.

    1983-01-01

    The Curie temperature of fcc Fe-Ni containing 30-50% Ni is reaised by neutron irradiation, although no appreciable change is detected in the X-ray diffraction pattern. These results are related to a tendency to two-phase separation of the fcc phase. (orig.)

  6. Application of magnetic circular dichroism spectroscopy to the optical spectra of natural and irradiated diamonds

    Douglas, I.N.; Ruciman, W.A.; Australian National Univ., Canberra. Research School of Physical Sciences)

    1977-01-01

    The MCD spectra of natural type Ia and electron-irradiated type Ia and type IIa diamonds have been measured. The information obtained from MCD spectroscopy complements that obtained from absorption spectroscopy and can be helpful in the assignment of electronic transitions. (orig.) [de

  7. Changes in cluster magnetism and suppression of local superconductivity in amorphous FeCrB alloy irradiated by Ar"+ ions

    Okunev, V.D.; Samoilenko, Z.A.; Szymczak, H.; Szewczyk, A.; Szymczak, R.; Lewandowski, S.J.; Aleshkevych, P.; Malinowski, A.; Gierłowski, P.; Więckowski, J.; Wolny-Marszałek, M.; Jeżabek, M.; Varyukhin, V.N.; Antoshina, I.A.

    2016-01-01

    We show that cluster magnetism in ferromagnetic amorphous Fe_6_7Cr_1_8B_1_5 alloy is related to the presence of large, D=150–250 Å, α-(Fe Cr) clusters responsible for basic changes in cluster magnetism, small, D=30–100 Å, α-(Fe, Cr) and Fe_3B clusters and subcluster atomic α-(Fe, Cr, B) groupings, D=10–20 Å, in disordered intercluster medium. For initial sample and irradiated one (Φ=1.5×10"1"8 ions/cm"2) superconductivity exists in the cluster shells of metallic α-(Fe, Cr) phase where ferromagnetism of iron is counterbalanced by antiferromagnetism of chromium. At Φ=3×10"1"8 ions/cm"2, the internal stresses intensify and the process of iron and chromium phase separation, favorable for mesoscopic superconductivity, changes for inverse one promoting more homogeneous distribution of iron and chromium in the clusters as well as gigantic (twice as much) increase in density of the samples. As a result, in the cluster shells ferromagnetism is restored leading to the increase in magnetization of the sample and suppression of local superconductivity. For initial samples, the temperature dependence of resistivity ρ(T)~T"2 is determined by the electron scattering on quantum defects. In strongly inhomogeneous samples, after irradiation by fluence Φ=1.5×10"1"8 ions/cm"2, the transition to a dependence ρ(T)~T"1"/"2 is caused by the effects of weak localization. In more homogeneous samples, at Φ=3×10"1"8 ions/cm"2, a return to the dependence ρ(T)~T"2 is observed. - Highlights: • The samples at high dose of ion irradiation become more homogeneous. • Gigantic increase in density of the samples (twice as much) is observed. • Ferromagnetism in large Fe–Cr clusters is restored. • Ferromagnetism of Fe–Cr clusters suppresses local superconductivity in them. • The participation of quantum defects in scattering of electrons is returned.

  8. Spin-splitting in p-type Ge devices

    Holmes, S. N., E-mail: s.holmes@crl.toshiba.co.uk; Newton, P. J.; Llandro, J.; Mansell, R.; Barnes, C. H. W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Morrison, C.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-08-28

    Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρ{sub xx} agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρ{sub xx} with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 10{sup 10} cm{sup −2} in depletion mode to 1.7 × 10{sup 11} cm{sup −2} in enhancement.

  9. Behavior of the dynamic magnetic susceptibility in ybco bula ceramics irradiated with gamma rays

    Leyva Fabelo, A.; Bouza Dominguez, J.; Cruz Inclan, Carlos M.

    2001-01-01

    Using measurements of the ac susceptibility, the behavior with the irradiation dose of YBa2Cu3O7- bulk ceramics synthesized by the classic reaction method in solid state, was studied. A Co60 gamma chamber model MPX-G-25M and a Cs137 source were employed as gamma ray sources. The behavior of the beginning temperature of the normal - superconducting state transition with the exposition dose show, independently of the incident gamma energy, a monotonous growth until reaching a threshold dose, after which, observe a fall, more abrupt in the case of the Co60. This behavior can be explained using the model that postulates the ability of the gamma radiation, in certain dose intervals, to stimulate the structural reordering in the oxygen sublattice. When the irradiation process takes place in the Co60 gamma chamber, the behavior of the superconducting volume fraction of the sample characterizes by the initial sharp fall with the dose, followed with an attenuation of the decrement. In the case of Cs137 irradiation, the behavior of the superconducting volume fraction is similar to the behavior of the Ton with the dose

  10. First results on the charge collection properties of segmented detectors made with p-type bulk silicon

    Casse, G.; Allport, P.P.; Bowcock, T.J.V.; Greenall, A.; Hanlon, M.; Jackson, J.N.

    2002-01-01

    Radiation damage of n-type bulk detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon substrate (type inversion) after a fluence of a few times 10 13 protons cm -2 . The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction can be prevented using silicon detectors with p-type substrates. Furthermore, the use of n-side readout gives higher charge collection efficiency for segmented devices operated below the full depletion voltage. Large area (∼6.4x6.4 cm 2 ) capacitively coupled 80 μm pitch detectors using polysilicon bias resistors have been fabricated on p-type substrates (n-in-p diode structure). These detectors have been irradiated with 24 GeV/c protons to an integrated fluence of 3x10 14 cm -2 and kept for 7 days at 25 deg. C to reach the broad minimum of the annealing curve. Results are presented on the comparison of their charge collection properties with detectors using p-strip read-out after corresponding dose and annealing

  11. Smoothing and instability with magnetic field in a non-uniformly laser-irradiated planar target

    Bell, A.R.; Epperlein, E.M.

    1986-01-01

    Calculations are presented of the magneto-hydrodynamic response of a planar target to non-uniformities in energy deposition by a laser. The amplitude of the non-uniformities are assumed small and the equations are linearised in small perturbations about the solution for steady planar ablation driven by uniform laser energy deposition. The grad(n)xgrad(T) magnetic field source is included, along with Nernst convection and the Righi-Leduc heat flow. The magnetic field is shown to give a small increase in smoothing. A source term for magnetic field is included to simulate the effects of the Weibel instability. The instability is not strong enough to overcome the smoothing processes under the present assumptions. (author)

  12. Different early effect of irradiation in brain and small cell lung cancer examined by in vivo 31P-magnetic resonance spectroscopy

    Kristjansen, P E; Pedersen, A G; Quistorff, B

    1992-01-01

    Early effects of irradiation were evaluated by non-invasive in vivo 31P-magnetic resonance spectroscopy (31P-MRS) of two small cell lung cancer (SCLC) tumor lines CPH SCCL 54A and 54B, in nude mice. The tumors were originally derived from the same patient and have similar morphology and growth...

  13. Magnetization and flux pinning in high-Tc cuprates: Irradiated and oxygen deficient materials

    Thompson, J.R.; Civale, L.; Marwick, A.D.; Holtzberg, F.

    1992-11-01

    This work surveys recent studies of the intragrain current density J and vortex pinning in high Tc superconductors. Materials include Y 1 Ba 2 Cu 3 O 7-δ and Bi 2 Sr 2 Ca 1 Cu 2 O 8 single crystals and aligned polycrystals. To probe the flux pinning, we modified the strength, number, and morphology of defects. Varying the oxygen content (7-δ) in YBa 2 Cu 3 O 7-δ or irradiating the materials with ions, having either light or heavy masses, gives systematic changes in the character of the all-important defects

  14. Synthesis of magnetic graphene oxide–TiO{sub 2} and their antibacterial properties under solar irradiation

    Chang, Ying-Na [College of Environmental Science and Engineering, Key Laboratory of Environmental Biology and Pollution Control, Ministry of Education, Hunan University, Changsha 410082 (China); Ou, Xiao-Ming [China National Engineering Research Center for Agrochemicals, Hunan Research Institute of Chemical Industry, Changsha 410014 (China); Zeng, Guang-Ming [College of Environmental Science and Engineering, Key Laboratory of Environmental Biology and Pollution Control, Ministry of Education, Hunan University, Changsha 410082 (China); Gong, Ji-Lai, E-mail: jilaigong@gmail.com [College of Environmental Science and Engineering, Key Laboratory of Environmental Biology and Pollution Control, Ministry of Education, Hunan University, Changsha 410082 (China); Deng, Can-Hui; Jiang, Yan; Liang, Jie; Yuan, Gang-Qiang; Liu, Hong-Yu; He, Xun [College of Environmental Science and Engineering, Key Laboratory of Environmental Biology and Pollution Control, Ministry of Education, Hunan University, Changsha 410082 (China)

    2015-07-15

    Highlights: • Magnetic graphene oxide–TiO{sub 2} (MGO–TiO{sub 2}) composites were synthesized. • MGO–TiO{sub 2} had excellent antibacterial activity toward Escherichia coli. • MGO–TiO{sub 2} could effectively and rapidly separate from aqueous solution. • Carbonates and phosphates significantly reduced the bacterial survival rate. - Abstract: Titanium dioxide (TiO{sub 2}) has been intensively researched and increasingly used as antibacterial agent, but it suffers from separation inconvenience. Its effective removal from water after reaction while maintaining its high antibacterial activity becomes necessary. In this work, it was the first time the magnetic graphene oxide–TiO{sub 2} (MGO–TiO{sub 2}) composites were prepared through a simple synthesis method. The results indicated that MGO–TiO{sub 2} exhibited a good antibacterial activity against Escherichia coli. MGO–TiO{sub 2} was found to almost completely inactivate the E. coli within 30 min under solar irradiation. The effect of inorganic ions present in E. coli suspension was also evaluated. Compared with other ions, HCO{sub 3}{sup −} and HPO{sub 4}{sup 2−} had a greater influence on the antibacterial property.

  15. Magnetic Phase Transition in Ion-Irradiated Ultrathin CoN Films via Magneto-Optic Faraday Effect.

    Su, Chiung-Wu; Chang, Yen-Chu; Chang, Sheng-Chi

    2013-11-15

    The magnetic properties of 1 nm thick in-plane anisotropic Co ultrathin film on ZnO(0001) were investigated through successive 500 eV nitrogen-ion sputtering. Magneto-optical Faraday effects were used to observe the evolution of the ion-irradiated sample in longitudinal and perpendicular magnetic fields. The ferromagnetic phase of the initial in-plane anisotropic fcc β-Co phase transformation to β-Co(N) phase was terminated at paramagnetic CoN x phase. In-plane anisotropy with weak out-of-plane anisotropy of the Co/ZnO sample was initially observed in the as-grown condition. In the sputtering process, the N⁺ ions induced simultaneous sputtering and doping. An abrupt spin reorientation behavior from in-plane to out-of-plane was found under prolonged sputtering condition. The existence of perpendicular anisotropy measured from the out-of-plane Faraday effect may be attributed to the co-existence of residual β-Co and Co₄N exchange bonding force by the gradual depletion of Co-N thickness.

  16. Magnetic and topographical modifications of amorphous Co–Fe thin films induced by high energy Ag{sup 7+} ion irradiation

    Pookat, G.; Hysen, T. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Al-Harthi, S.H.; Al-Omari, I.A. [Department of Physics, Sultan Qaboos University, Muscat, P.O. Box 36, Code 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2013-09-01

    We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co{sub 77}Fe{sub 23} thin films on silicon substrates using 100 MeV Ag{sup 7+} ions fluences of 1 × 10{sup 11} ions/cm{sup 2}, 1 × 10{sup 12} ions/cm{sup 2}, 1 × 10{sup 13} ions/cm{sup 2}, and 3 × 10{sup 13} ions/cm{sup 2}. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated.

  17. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

    2013-01-01

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  18. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    Gan, Liyong

    2013-09-26

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  19. Lesion evolution after gamma knife irradiation observed by magnetic resonance imaging

    Jirák, D.; Náměstková, K.; Herynek, V.; Liščák, R.; Vymazal, J.; Mareš, Vladislav; Syková, Eva; Hájek, M.

    2007-01-01

    Roč. 83, č. 4 (2007), s. 237-244 ISSN 0955-3002 R&D Projects: GA MŠk 1M0538; GA MŠk(CZ) LC554 Grant - others:EU(DE) 512146 Institutional research plan: CEZ:AV0Z50390512; CEZ:AV0Z50110509 Source of funding: R - rámcový projekt EK Keywords : Gamma knife * Rat brain * Magnetic resonance imaging Subject RIV: FH - Neurology Impact factor: 1.468, year: 2007

  20. Production and Magnetic Field Confinement of Laser-Irradiated Solid Particle Plasmas

    Haught, A. F.; Polk, D. H.; Fader, W. J. [United Aircraft Research Laboratories East Hartford, CT (United States)

    1969-01-15

    The focused high-intensity beam from a Q-spoiled laser has been used to form a high-temperature, high-density plasma from a single 10-20 micron radius solid particle of lithium hydride which is electrically suspended in a vacuum environment free of all material supports. Time-resolved charge collection measurements of the freely expanding plasma have shown that a high degree of ionization of the 10{sup 15} atoms in the lithium hydride particle can be achieved and that the plasma produced is essentially spherically symmetric in density over the full 4 {pi} solid angle. Time-of-flight studies of the plasma expansion have shown that average electron and ion energies exceeding 200 electron volts are obtained and that the plasma expansion rate, like the plasma density, is spherically symmetric. No charge separation or separation of the lithium and hydrogen ions is observed in the expanding plasma. Numerical calculations of the plasma formation and expansion have been made using a one-dimensional spherical hydrodynamic model and, on the basis of the results obtained, an integrated similarity model has been developed for calculations of the plasma time history and energy over the range of conditions employed in the experiments. These calculations, which include the effects of laser pulse time history, fraction of the incident beam occupied by the expanding plasma, radial density and velocity gradients within the plasma, and spatial distribution of the incident laser energy, give results for the plasma radial density distribution, velocity profile, and plasma energy in good agreement with those determined experimentally over the full range of the present measurements. Measurements have been carried out to examine the interaction of these laser -produced plasmas with mirror, cusp, and minimum-B magnetic fields. Experiments with mirror and minimum-B magnetic fields up to 8 kC show that plasmas with densities of 10{sup 12} -10{sup 13} cm{sup -3} are confined for times of 5

  1. Sub-micron magnetic patterns and local variations of adhesion force induced in non-ferromagnetic amorphous steel by femtosecond pulsed laser irradiation

    Zhang, Huiyan; Feng, Yuping [Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, E08193 (Spain); Nieto, Daniel [Microoptics and GRIN Optics Group, Applied Physics Department, University of Santiago de Compostela, E15782 Santiago de Compostela (Spain); García-Lecina, Eva [Unidad de Superficies Metálicas, IK4-CIDETEC, E20009 Donostia-San Sebastián Gipuzkoa (Spain); Mcdaniel, Clare [National Centre for Laser Applications, School of Physics, National University of Ireland, Galway (Ireland); Díaz-Marcos, Jordi [Unitat de Tècniques Nanomètriques, Centres Científics i Tecnològics, Universitat de Barcelona, E08028 Barcelona (Spain); Flores-Arias, María Teresa [Microoptics and GRIN Optics Group, Applied Physics Department, University of Santiago de Compostela, E15782 Santiago de Compostela (Spain); O’Connor, Gerard M. [National Centre for Laser Applications, School of Physics, National University of Ireland, Galway (Ireland); Baró, Maria Dolors [Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, E08193 (Spain); Pellicer, Eva, E-mail: eva.pellicer@uab.cat [Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, E08193 (Spain); and others

    2016-05-15

    Highlights: • Formation of ripples after femtosecond pulsed laser irradiation (FSPLI) of metallic glass was studied. • Magnetic patterning at the surface of non-ferromagnetic amorphous steel was induced by FSPLI. • The origin of the generated ferromagnetism is the laser-induced devitrification. - Abstract: Periodic ripple and nanoripple patterns are formed at the surface of amorphous steel after femtosecond pulsed laser irradiation (FSPLI). Formation of such ripples is accompanied with the emergence of a surface ferromagnetic behavior which is not initially present in the non-irradiated amorphous steel. The occurrence of ferromagnetic properties is associated with the laser-induced devitrification of the glassy structure to form ferromagnetic (α-Fe and Fe{sub 3}C) and ferrimagnetic [(Fe,Mn){sub 3}O{sub 4} and Fe{sub 2}CrO{sub 4}] phases located in the ripples. The generation of magnetic structures by FSPLI turns out to be one of the fastest ways to induce magnetic patterning without the need of any shadow mask. Furthermore, local variations of the adhesion force, wettability and nanomechanical properties are also observed and compared to those of the as-cast amorphous alloy. These effects are of interest for applications (e.g., biological, magnetic recording, etc.) where both ferromagnetism and tribological/adhesion properties act synergistically to optimize material performance.

  2. Ponderomotive ion acceleration in dense magnetized laser-irradiated thick target plasmas

    Sinha, Ujjwal; Kaw, Predhiman

    2012-03-01

    When a circularly polarized laser pulse falls on an overdense plasma, it displaces the electrons via ponderomotive force creating a double layer. The double layer constitutes of an ion and electron sheath with in which the electrostatic field present is responsible for ion acceleration. In this paper, we have analyzed the effect a static longitudinal magnetic field has over the ion acceleration mechanism. The longitudinal magnetic field changes the plasma dielectric constant due to cyclotron effects which in turn enhances or reduces the ponderomotive force exerted by the laser depending on whether the laser is left or right circularly polarized. Also, the analysis of the ion space charge region present behind the ion sheath of the laser piston that undergoes coulomb explosion has been explored for the first time. We have studied the interaction of an incoming ion beam with the laser piston and the ion space charge. It has been found that the exploding ion space charge has the ability to act as an energy amplifier for incoming ion beams.

  3. Inkjet Printing NiO-Based p-Type Dye-Sensitized Solar Cells.

    Brisse, R; Faddoul, R; Bourgeteau, T; Tondelier, D; Leroy, J; Campidelli, S; Berthelot, T; Geffroy, B; Jousselme, B

    2017-01-25

    Fabrication at low cost of transparent p-type semiconductors with suitable electronic properties is essential toward the scalability of many electronic devices, especially for photovoltaic and photocatalytic applications. In this context, the synthesis of mesoporous NiO films through inkjet printing of a sol-gel ink was investigated for the first time. Nickel chloride and Pluronic F-127, used as nickel oxide precursor and pore-forming agent, respectively, were formulated in a water/ethanol mixture to prepare a jettable ink for Dimatix printer. Multilayer NiO films were formed, and different morphologies could be obtained by playing on the interlayer thermal treatment. At low temperature (30 °C), a porous nanoparticulate-nanofiber dual-pore structure was observed. On the other hand, with a high temperature treatment (450 °C), nanoparticulate denser films without any dual structure were obtained. The mechanism for NiO formation during the final sintering step, investigated by means of X-ray photolectron spectroscopy, shows that a Ni(OH) 2 species is an intermediate between NiCl 2 and NiO. The different morphologies and thicknesses of the NiO films were correlated to their performance in a p-DSSC configuration, using a new push-pull dye (so-called "RBG-174") and an iodine-based electrolyte. Moreover, the positive impact of a nanometric NiO x layer deposited by spin-coating and introduced between FTO and the NiO mesoporous network is highlighted in the present work. The best results were obtained with NiO x /four layer-NiO mesoporous photocathodes of 860 nm, with a current density at the short circuit of 3.42 mA cm -2 (irradiance of 100 mW cm -2 spectroscopically distributed following AM 1.5).

  4. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

    2009-01-01

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

  5. Classification System for Identifying Women at Risk for Altered Partial Breast Irradiation Recommendations After Breast Magnetic Resonance Imaging

    Kowalchik, Kristin V.; Vallow, Laura A.; McDonough, Michelle; Thomas, Colleen S.; Heckman, Michael G.; Peterson, Jennifer L.; Adkisson, Cameron D.; Serago, Christopher; McLaughlin, Sarah A.

    2013-01-01

    Purpose: To study the utility of preoperative breast MRI for partial breast irradiation (PBI) patient selection, using multivariable analysis of significant risk factors to create a classification rule. Methods and Materials: Between 2002 and 2009, 712 women with newly diagnosed breast cancer underwent preoperative bilateral breast MRI at Mayo Clinic Florida. Of this cohort, 566 were retrospectively deemed eligible for PBI according to the National Surgical Adjuvant Breast and Bowel Project Protocol B-39 inclusion criteria using physical examination, mammogram, and/or ultrasound. Magnetic resonance images were then reviewed to determine their impact on patient eligibility. The patient and tumor characteristics were evaluated to determine risk factors for altered PBI eligibility after MRI and to create a classification rule. Results: Of the 566 patients initially eligible for PBI, 141 (25%) were found ineligible because of pathologically proven MRI findings. Magnetic resonance imaging detected additional ipsilateral breast cancer in 118 (21%). Of these, 62 (11%) had more extensive disease than originally noted before MRI, and 64 (11%) had multicentric disease. Contralateral breast cancer was detected in 28 (5%). Four characteristics were found to be significantly associated with PBI ineligibility after MRI on multivariable analysis: premenopausal status (P=.021), detection by palpation (P<.001), first-degree relative with a history of breast cancer (P=.033), and lobular histology (P=.002). Risk factors were assigned a score of 0-2. The risk of altered PBI eligibility from MRI based on number of risk factors was 0:18%; 1:22%; 2:42%; 3:65%. Conclusions: Preoperative bilateral breast MRI altered the PBI recommendations for 25% of women. Women who may undergo PBI should be considered for breast MRI, especially those with lobular histology or with 2 or more of the following risk factors: premenopausal, detection by palpation, and first-degree relative with a history of

  6. p-type Mesoscopic nickel oxide/organometallic perovskite heterojunction solar cells.

    Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

    2014-04-23

    In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics.

  7. Effect of swift heavy ion irradiation on structural and magnetic properties of GdFe{sub 1−x}Ni{sub x}O{sub 3} (x≤0.2) thin films

    Kaur, Pawanpreet [Department of Physics, National Institute of Technology, Hamirpur, H.P. 177005 (India); Sharma, K.K., E-mail: kknitham@gmail.com [Department of Physics, National Institute of Technology, Hamirpur, H.P. 177005 (India); Pandit, Rabia [Department of Physics, National Institute of Technology, Hamirpur, H.P. 177005 (India); Choudhary, R.J. [UGC-DAE Consortium for Scientific Research at Indore, M.P. 452 001 (India); Kumar, Ravi [Centre for Material Science and Engineering, National Institute of Technology, Hamirpur, H.P 177005 (India)

    2016-01-15

    The present work reports the effect of Ni doping and 200 MeV Ag{sup 15+} ion irradiation on the structural and magnetic properties of GdFe{sub 1−x}Ni{sub x}O{sub 3} (x≤0.2) thin films grown on SrTiO{sub 3} (001) substrate by pulse laser deposition (PLD). From the XRD patterns ‘c-axis’ oriented growth in the pristine films is noticed, whereas after irradiation amorphization in the films is noticed. The atomic force microscopic (AFM) images reveal the increase in surface roughness with doping and irradiation as well. The irreversibility in the zero field cooled and field cooled magnetic curves indicates to the possibility of magnetic disorder in all the pristine as well as irradiated samples. Magnetization has been found to decrease with increasing Ni{sup 3+} ion substitution at room temperature whereas an enhancement in magnetization is noticed after ion irradiation for all the films. The disparity in the magnetic properties of pristine GdFe{sub 1−x}Ni{sub x}O{sub 3} (0.0≤x≤0.2) orthoferrites thin films can be correlated to the difference in hybridization in transition metal ion and O{sup 2−} ion orbitals. However, presence of strains caused by the columnar defects is responsible for the change in structural, morphological and magnetic properties in the irradiated samples. - Highlights: • ‘c-axis’ oriented GdFe{sub 1−x}Ni{sub x}O{sub 3} (x≤0.2) thin films grown on SrTiO{sub 3} substrate. • Thin films have been irradiated by 200 MeV Ag{sup 15+} ions. • Presence of columnar defects have been estimated using SRIM. • Magnetic disorder in all the film samples have been seen at lower temperatures. • Structural and magnetic characteristics altered with doping and ion irradiation.

  8. Dynamics and structure of self-generated magnetics fields on solids following high contrast, high intensity laser irradiation

    Albertazzi, B. [LULI, École Polytechnique, CNRS, CEA, UPMC, 91128 Palaiseau (France); INRS-EMT, 1650 bd L. Boulet, J3X1S2, Varennes, Québec (Canada); Graduate School of Engineering, University of Osaka, Suita, Osaka 565-087 (Japan); Chen, S. N.; Fuchs, J., E-mail: julien.fuchs@polytechnique.fr [LULI, École Polytechnique, CNRS, CEA, UPMC, 91128 Palaiseau (France); Institute of Applied Physics, 46 Ulyanov Street, 603950 Nizhny Novgorod (Russian Federation); Antici, P. [INRS-EMT, 1650 bd L. Boulet, J3X1S2, Varennes, Québec (Canada); Dept. SBAI, Universita di Roma “La Sapienza,” Via A. Scarpa 14, 00161 Rome (Italy); Böker, J.; Swantusch, M.; Willi, O. [Institut für Laser-und Plasmaphysik, Heinrich-Heine-Universität, Düsseldorf (Germany); Borghesi, M. [School of Mathematics and Physics, The Queen' s University, Belfast (United Kingdom); Breil, J.; Feugeas, J. L.; Nicolaï, Ph.; Tikhonchuk, V. T.; D' Humières, E. [CELIA, University of Bordeaux - CNRS - CEA, 33405 Talence (France); Dervieux, V.; Nakatsutsumi, M.; Romagnagni, L. [LULI, École Polytechnique, CNRS, CEA, UPMC, 91128 Palaiseau (France); Lancia, L. [Dept. SBAI, Universita di Roma “La Sapienza,” Via A. Scarpa 14, 00161 Rome (Italy); Shepherd, R. [LLNL, East Av., Livermore, California 94550 (United States); Sentoku, Y. [Department of Physics, University of Nevada, Reno, Nevada 89557-0058 (United States); Starodubtsev, M. [Institute of Applied Physics, 46 Ulyanov Street, 603950 Nizhny Novgorod (Russian Federation); and others

    2015-12-15

    The dynamics of self-generated magnetic B-fields produced following the interaction of a high contrast, high intensity (I > 10{sup 19 }W cm{sup −2}) laser beam with thin (3 μm thick) solid (Al or Au) targets is investigated experimentally and numerically. Two main sources drive the growth of B-fields on the target surfaces. B-fields are first driven by laser-generated hot electron currents that relax over ∼10–20 ps. Over longer timescales, the hydrodynamic expansion of the bulk of the target into vacuum also generates B-field induced by non-collinear gradients of density and temperature. The laser irradiation of the target front side strongly localizes the energy deposition at the target front, in contrast to the target rear side, which is heated by fast electrons over a much larger area. This induces an asymmetry in the hydrodynamic expansion between the front and rear target surfaces, and consequently the associated B-fields are found strongly asymmetric. The sole long-lasting (>30 ps) B-fields are the ones growing on the target front surface, where they remain of extremely high strength (∼8–10 MG). These B-fields have been recently put by us in practical use for focusing laser-accelerated protons [B. Albertazzi et al., Rev. Sci. Instrum. 86, 043502 (2015)]; here we analyze in detail their dynamics and structure.

  9. Effect of 100 MeV Ag{sup +7} ion irradiation on the bulk and surface magnetic properties of Co–Fe–Si thin films

    Hysen, T., E-mail: hysenthomas@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Department of Physics, Christian College, Chengannur, Kerala 689 122 (India); Geetha, P. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Al-Harthi, Salim; Al-Omari, I.A. [Department of Physics, College of Science, Sultan Qaboos University, Al Khod 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639 798 (Singapore); Sakthikumar, D. [Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe (Japan); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India)

    2014-12-15

    Thin films of Co–Fe–Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag{sup +7} ions at fluences of 1×10{sup 11}, 1×10{sup 12} and 1×10{sup 13} ions/cm{sup 2}. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag{sup 7+} ions modifies the surface morphology. Irradiating with ions at fluences of 1×10{sup 11} ions/cm{sup 2} smoothens the mesoscopic hill-like structures, and then, at 1×10{sup 12} ions/cm{sup 2} new surface structures are created. When the fluence is further increased to 1×10{sup 13} ions/cm{sup 2} an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×10{sup 11} ions/cm{sup 2}, 1×10{sup 12} ions/cm{sup 2} and 1×10{sup 13} ions/cm{sup 2} the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation. - Highlights: • We have irradiated thermally evaporated Co–Fe–Si thin films on glass substrate with 100 MeV Ag{sup +7} ions using the 15 UD Pelletron Accelerator at IUAC, New Delhi, India. • Surface morphology and magnetic characteristics of the films can be altered with ion irradiation. • It was observed that the variation in surface magnetic properties correlates well with the changes in surface morphology, further reiterating the

  10. Local hysteresis loops measurements on irradiated FeSiB patterned dots by magnetic force microscopy

    Coïsson, M., E-mail: m.coisson@inrim.it [INRIM, Electromagnetism Division, strada delle Cacce 91, 10135 Torino (Italy); Barrera, G. [INRIM, Electromagnetism Division, strada delle Cacce 91, 10135 Torino (Italy); Università di Torino, Dipartimento di Chimica, via P. Giuria 9, 10125 Torino (Italy); Celegato, F.; Enrico, E.; Olivetti, E.S.; Tiberto, P.; Vinai, F. [INRIM, Electromagnetism Division, strada delle Cacce 91, 10135 Torino (Italy)

    2015-01-01

    Magnetic Force Microscopy (MFM) has been exploited to develop a technique capable of investigating the field-dependent magnetisation reversal processes in patterned systems, allowing the full reconstruction of a local hysteresis loop. Fe–Si–B dots with a lateral size of 6μm and a thickness of 250 nm have been prepared by sputtering and optical lithography. In the as-prepared state, the dots are characterised by a dense stripe domain configuration, clearly visible at the MFM. Subsequently, the dots have been thinned by means of exposition to a focussed ion beam, consisting of Ga{sup +} ions having an energy of 30 keV. The local hysteresis loops have been measured by means of the MFM-derived technique. The progressive thinning of the dots results in the disappearance of the perpendicular anisotropy responsible for the dense stripe domain configuration, with the dominance of the shape anisotropy for thickness values below ≈70nm. The results are consistent with the spin reorientation transition effect studied on similar systems in the form of continuous thin films.

  11. Local hysteresis loops measurements on irradiated FeSiB patterned dots by magnetic force microscopy

    Coïsson, M.; Barrera, G.; Celegato, F.; Enrico, E.; Olivetti, E.S.; Tiberto, P.; Vinai, F.

    2015-01-01

    Magnetic Force Microscopy (MFM) has been exploited to develop a technique capable of investigating the field-dependent magnetisation reversal processes in patterned systems, allowing the full reconstruction of a local hysteresis loop. Fe–Si–B dots with a lateral size of 6μm and a thickness of 250 nm have been prepared by sputtering and optical lithography. In the as-prepared state, the dots are characterised by a dense stripe domain configuration, clearly visible at the MFM. Subsequently, the dots have been thinned by means of exposition to a focussed ion beam, consisting of Ga + ions having an energy of 30 keV. The local hysteresis loops have been measured by means of the MFM-derived technique. The progressive thinning of the dots results in the disappearance of the perpendicular anisotropy responsible for the dense stripe domain configuration, with the dominance of the shape anisotropy for thickness values below ≈70nm. The results are consistent with the spin reorientation transition effect studied on similar systems in the form of continuous thin films

  12. Behavior of the future LHC magnet protection diodes irradiated in a nuclear reactor at 4.6 K with intermediate annealing

    Berland, V.; Hagedorn, D.; Gerstenberg, H.

    1996-01-01

    In the framework of the LHC project at CERN, the effects of radiation on the electrical characteristics of epitaxial diodes for superconducting magnet protection were studied. The diodes were exposed to an irradiation dose up to 50 kGy and a neutron fluence of 10 15 n/cm 2 with intermediate thermal annealing each 10 kGy dose steps in the Technical University of Munich reactor at 4.6 K

  13. Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

    Sun, Chang; Rougieux, Fiacre E.; Macdonald, Daniel

    2014-01-01

    Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr i and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ n /σ p of Cr i and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.

  14. Internal photoemission for photovoltaic using p-type Schottky barrier: Band structure dependence and theoretical efficiency limits

    Shih, Ko-Han; Chang, Yin-Jung

    2018-01-01

    Solar energy conversion via internal photoemission (IPE) across a planar p-type Schottky junction is quantified for aluminum (Al) and copper (Cu) in the framework of direct transitions with non-constant matrix elements. Transition probabilities and k-resolved group velocities are obtained based on pseudo-wavefunction expansions and realistic band structures using the pseudopotential method. The k-resolved number of direct transitions, hole photocurrent density, quantum yield (QY), and the power conversion efficiency (PCE) under AM1.5G solar irradiance are subsequently calculated and analyzed. For Al, the parabolic and "parallel-band" effect along the U-W-K path significantly enhances the transition rate with final energies of holes mainly within 1.41 eV below the Fermi energy. For Cu, d-state hot holes mostly generated near the upper edge of 3d bands dominate the hole photocurrent and are weekly (strongly) dependent on the barrier height (metal film thickness). Hot holes produced in the 4s band behave just oppositely to their d-state counterparts. Non-constant matrix elements are shown to be necessary for calculations of transitions due to time-harmonic perturbation in Cu. Compared with Cu, Al-based IPE in p-type Schottky shows the highest PCE (QY) up to about 0.2673% (5.2410%) at ΦB = 0.95 eV (0.5 eV) and a film thickness of 11 nm (20 nm). It is predicted that metals with relatively dispersionless d bands (such as Cu) in most cases do not outperform metals with photon-accessible parallel bands (such as Al) in photon energy conversion using a planar p-type Schottky junction.

  15. Assessment of irradiated brain metastases using dynamic contrast-enhanced magnetic resonance imaging

    Almeida-Freitas, Daniela B.; Pinho, Marco C.; Otaduy, Maria C.G.; Costa Leite, Claudia da; Braga, Henrique F.; Meira-Freitas, Daniel

    2014-01-01

    The purpose of this study was to evaluate the effect of stereotactic radiosurgery (SRS) on cerebral metastases using the transfer constant (K trans ) assessed by dynamic contrast-enhanced (DCE) MRI. Furthermore, we aimed to evaluate the ability of K trans measurements to predict midterm tumor outcomes after SRS. The study received institutional review board approval, and informed consent was obtained from all subjects. Twenty-six adult patients with a total of 34 cerebral metastases underwent T1-weighted DCE MRI in a 1.5-T magnet at baseline (prior to SRS) and 4-8 weeks after treatment. Quantitative analysis of DCE MRI was performed by generating K trans parametric maps, and region-of-interest-based measurements were acquired for each metastasis. Conventional MRI was performed at least 16 weeks after SRS to assess midterm tumor outcome using volume variation. The mean (±SD) K trans value was 0.13 ± 0.11 min -1 at baseline and 0.08 ± 0.07 min -1 after 4-8 weeks post-treatment (p trans after SRS was predictive of tumor progression (hazard ratio = 1.50; 95 % CI = 1.16-1.70, p trans showed a sensitivity of 78 % and a specificity of 85 % for the prediction of progression at midterm follow-up. SRS was associated with a reduction of K trans values of the cerebral metastases in the early post-treatment period. Furthermore, K trans variation as assessed using DCE MRI may be helpful to predict midterm outcomes after SRS. (orig.)

  16. A novel mechanism of P-type ATPase autoinhibition involving both termini of the protein

    Ekberg, Kira; Palmgren, Michael; Veierskov, Bjarke

    2010-01-01

    The activity of many P-type ATPases is found to be regulated by interacting proteins or autoinhibitory elements located in N- or C-terminal extensions. An extended C terminus of fungal and plant P-type plasma membrane H+-ATPases has long been recognized to be part of a regulatory apparatus....... This identifies the first group of P-type ATPases for which both ends of the polypeptide chain constitute regulatory domains, which together contribute to the autoinhibitory apparatus. This suggests an intricate mechanism of cis-regulation with both termini of the protein communicating to obtain the necessary...

  17. Fabrication of p-type porous GaN on silicon and epitaxial GaN

    Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

    2013-01-01

    Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

  18. Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

    Hota, M. K.; Caraveo-Frescas, J. A.; McLachlan, M. A.; Alshareef, Husam N.

    2014-01-01

    We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up

  19. Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

    Songrui Zhao

    2017-09-01

    Full Text Available p-Type doping represents a key step towards III-nitride (InN, GaN, AlN optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE-grown p-type InN and AlN—two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

  20. Origin of the p-type character of AuCl3 functionalized carbon nanotubes

    Murat, Altynbek

    2014-02-13

    The microscopic origin of the p-type character of AuCl3 functionalized carbon nanotubes (CNTs) is investigated using first-principles self-interaction corrected density functional theory (DFT). Recent DFT calculations suggest that the p-type character of AuCl3 functionalized CNTs is due to the Cl atoms adsorbed on the CNTs. We test this hypothesis and show that adsorbed Cl atoms only lead to a p-type character for very specific concentrations and arrangements of the Cl atoms, which furthermore are not the lowest energy configurations. We therefore investigate alternative mechanisms and conclude that the p-type character is due to the adsorption of AuCl4 molecules. The unraveling of the exact nature of the p-doping adsorbates is a key step for further development of AuCl3 functionalized CNTs in water sensor applications. © 2014 American Chemical Society.

  1. Origin of the p-type character of AuCl3 functionalized carbon nanotubes

    Murat, Altynbek; Rungger, Ivan; Jin, Chengjun; Sanvito, Stefano; Schwingenschlö gl, Udo

    2014-01-01

    The microscopic origin of the p-type character of AuCl3 functionalized carbon nanotubes (CNTs) is investigated using first-principles self-interaction corrected density functional theory (DFT). Recent DFT calculations suggest that the p

  2. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    Bianchi Granato, Danilo

    2012-01-01

    that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  3. High surface hole concentration p-type GaN using Mg implantation

    Long Tao; Yang Zhijian; Zhang Guoyi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 17 cm -3 ) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  4. STUDY OF ELECTRICAL CHARACTERISTIC OF NEW P-TYPE TRENCHED UMOSFET

    Akansha Ephraim*, Neelesh Agrawal, Anil Kumar, A.K. Jaiswal

    2017-01-01

    In this paper p-type trenched UMOSFET was designed without super junction and constructed like any other conventional MOSFET. Characteristic curve was studied between drain current verses drain voltage and drain current verses gate voltage. The trench was designed under TCAD simulation tool Silvaco software using etching process. The specific channel length of the p-type UMOSFET has been concentrated as 0.9 microns. The device structures are designed using Silvaco Athena and characteristics w...

  5. Method for the preparation of n-i-p type radiation detector from silicon

    Keleti, J.; Toeroek, T.; Lukacs, J.; Molnar, I.

    1978-01-01

    The patent describes a procedure for the preparation of n-i-p type silicon radiation detectors. The aim was to provide an adaquate procedure for the production of α, β, γ-detectors from silicon available on the market, either p-type single crystal silicon characterised by its boron level. The procedure and the 9 claims are illustrated by two examples. (Sz.J.)

  6. Structural, optical and magnetic properties of Co doped ZnO DMS nanoparticles by microwave irradiation method

    Guruvammal, D.; Selvaraj, S.; Meenakshi Sundar, S.

    2018-04-01

    Microwave irradiation method is employed to synthesis of Zn1-xCoxO (x = 0.001-0.004) nanoparticles and investigate their structural, optical and magnetic properties using various characterization techniques. Structural studies reveal single phase hexagonal structure with average crystallite size 18-28 nm. FTIR study identifies the functional group present in the samples. The incorporation of Co2+ ions into the ZnO lattice is confirmed through XRD and UV-Vis studies. PL spectra exhibit a strong emission peak in UV region and a defect related visible emission peak in orange red region. These peaks are attributed to near band edge emission and the presence of oxygen related defects in the samples respectively. The blue shift observed in the UV emission peak shows an increase in the carrier concentration caused by the interstitial incorporation of ions into the ZnO lattice. The oxygen related defect is also confirmed through a peak obtained around g factor 1.9933 in ESR studies. Further, the number of spin contributing the ESR signal demonstrates the dependence of the strength of ferromagnetism on the concentration of oxygen ion vacancies. The VSM, ESR and PL measurements confirm the origin of RTFM of Co doped ZnO nanoparticles from the exchange interaction between the localized spin moments resulting from oxygen vacancies. The reason for the obtained super paramagnetic nature for x = 0.002 and x = 0.003 may be either due to some of nanoparticles or due to the weakly coupled Co ions in the Zn2+ site in the ZnO lattice. Further, the ferromagnetic behavior arises again for x = 0.004 due to the incorporation of Co2+ ions in the interstitial positions.

  7. Potential Impact of Preoperative Magnetic Resonance Imaging of the Breast on Patient Selection for Accelerated Partial Breast Irradiation

    Kühr, Marietta; Wolfgarten, Matthias; Stölzle, Marco; Leutner, Claudia; Höller, Tobias; Schrading, Simone; Kuhl, Christiane; Schild, Hans; Kuhn, Walther; Braun, Michael

    2011-01-01

    Purpose: Accelerated partial breast irradiation (APBI) after breast-conserving therapy is currently under investigation in prospective randomized studies. Multifocality and multicentricity are exclusion criteria for APBI. Preoperative breast magnetic resonance imaging (MRI) can detect ipsilateral and contralateral invasive tumor foci or ductal carcinoma in situ in addition to conventional diagnostic methods (clinical examination, mammography, and ultrasonography). The objective of this retrospective study was to evaluate the impact of preoperative MRI on patient selection for APBI. Methods and Materials: From 2002 to 2007, a total of 579 consecutive, nonselected patients with newly diagnosed early-stage breast cancer received preoperative breast MRI in addition to conventional imaging studies at the Bonn University Breast Cancer Center. In retrospect, 113 patients would have met the criteria for APBI using conventional imaging workup (clinical tumor size ≤3 cm; negative axillary lymph node status; unifocal disease; no evidence of distant metastases; no invasive lobular carcinoma, ductal and lobular carcinoma in situ, or Paget’s disease). We analyzed the amount of additional ipsilateral and contralateral tumor foci detected by MRI. Results: MRI detected additional tumor foci in 8.8% of patients eligible for APBI (11 tumor foci in 10 of 113 patients), either ipsilateral (n = 7, 6.2%) or contralateral (n = 4, 3.5%). In 1 patient, MRI helped detect additional tumor focus both ipsilaterally and contralaterally. Conclusions: Preoperative breast MRI is able to identify additional tumor foci in a clinically relevant number of cases in this highly selected group of patients with low-risk disease and may be useful in selecting patients for APBI.

  8. Potential Impact of Preoperative Magnetic Resonance Imaging of the Breast on Patient Selection for Accelerated Partial Breast Irradiation

    Kuehr, Marietta, E-mail: marietta.kuehr@ukb.uni-bonn.de [Department of Obstetrics and Gynecology and Center of Integrated Oncology, University of Bonn, Bonn (Germany); Wolfgarten, Matthias; Stoelzle, Marco [Department of Obstetrics and Gynecology and Center of Integrated Oncology, University of Bonn, Bonn (Germany); Leutner, Claudia [Department of Radiology, Center of Integrated Oncology, University of Bonn, Bonn (Germany); Hoeller, Tobias [Department of Medical Statistics and Epidemiology, University of Bonn, Bonn (Germany); Schrading, Simone; Kuhl, Christiane; Schild, Hans [Department of Radiology, Center of Integrated Oncology, University of Bonn, Bonn (Germany); Kuhn, Walther; Braun, Michael [Department of Obstetrics and Gynecology and Center of Integrated Oncology, University of Bonn, Bonn (Germany)

    2011-11-15

    Purpose: Accelerated partial breast irradiation (APBI) after breast-conserving therapy is currently under investigation in prospective randomized studies. Multifocality and multicentricity are exclusion criteria for APBI. Preoperative breast magnetic resonance imaging (MRI) can detect ipsilateral and contralateral invasive tumor foci or ductal carcinoma in situ in addition to conventional diagnostic methods (clinical examination, mammography, and ultrasonography). The objective of this retrospective study was to evaluate the impact of preoperative MRI on patient selection for APBI. Methods and Materials: From 2002 to 2007, a total of 579 consecutive, nonselected patients with newly diagnosed early-stage breast cancer received preoperative breast MRI in addition to conventional imaging studies at the Bonn University Breast Cancer Center. In retrospect, 113 patients would have met the criteria for APBI using conventional imaging workup (clinical tumor size {<=}3 cm; negative axillary lymph node status; unifocal disease; no evidence of distant metastases; no invasive lobular carcinoma, ductal and lobular carcinoma in situ, or Paget's disease). We analyzed the amount of additional ipsilateral and contralateral tumor foci detected by MRI. Results: MRI detected additional tumor foci in 8.8% of patients eligible for APBI (11 tumor foci in 10 of 113 patients), either ipsilateral (n = 7, 6.2%) or contralateral (n = 4, 3.5%). In 1 patient, MRI helped detect additional tumor focus both ipsilaterally and contralaterally. Conclusions: Preoperative breast MRI is able to identify additional tumor foci in a clinically relevant number of cases in this highly selected group of patients with low-risk disease and may be useful in selecting patients for APBI.

  9. Magnets

    Young, I.R.

    1984-01-01

    A magnet pole piece for an NMR imaging magnet is made of a plurality of magnetic wires with one end of each wire held in a non-magnetic spacer, the other ends of the wires being brought to a pinch, and connected to a magnetic core. The wires may be embedded in a synthetic resin and the magnetisation and uniformity thereof can be varied by adjusting the density of the wires at the spacer which forms the pole piece. (author)

  10. Effect of p-type multi-walled carbon nanotubes for improving hydrogen storage behaviors

    Lee, Seul-Yi; Yop Rhee, Kyong; Nahm, Seung-Hoon; Park, Soo-Jin

    2014-01-01

    In this study, the hydrogen storage behaviors of p-type multi-walled carbon nanotubes (MWNTs) were investigated through the surface modification of MWNTs by immersing them in sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ) at various ratios. The presence of acceptor-functional groups on the p-type MWNT surfaces was confirmed by X-ray photoelectron spectroscopy. Measurement of the zeta-potential determined the surface charge transfer and dispersion of the p-type MWMTs, and the hydrogen storage capacity was evaluated at 77 K and 1 bar. From the results obtained, it was found that acceptor-functional groups were introduced onto the MWNT surfaces, and the dispersion of MWNTs could be improved depending on the acid-mixed treatment conditions. The hydrogen storage was increased by acid-mixed treatments of up to 0.36 wt% in the p-type MWNTs, compared with 0.18 wt% in the As-received MWNTs. Consequently, the hydrogen storage capacities were greatly influenced by the acceptor-functional groups of p-type MWNT surfaces, resulting in increased electron acceptor–donor interaction at the interfaces. - Graphical abstract: Hydrogen storage behaviors of the p-type MWNTs with the acid-mixed treatments are described. Display Omitted Display Omitted

  11. Convergence of valence bands for high thermoelectric performance for p-type InN

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-01-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  12. Evolution of structural and magnetic properties of Co-doped TiO2 thin films irradiated with 100 MeV Ag7+ ions

    Mohanty, P; Singh, V P; Rath, Chandana; Mishra, N C; Ojha, S; Kanjilal, D

    2014-01-01

    In continuation to our earlier studies where we have shown room temperature ferromagnetism observed in TiO 2 and Co-doped TiO 2 (CTO) thin films independent of their phase (Mohanty et al 2012 J. Phys. D: Appl. Phys. 45 325301), here the modifications in structure and magnetic properties in CTO thin films using 100 MeV Ag 7+ ion irradiation are reported. Owing to the important role of defects in tailoring the magnetic properties of the material, we vary the ion fluence from 5 × 10 11 to 1 × 10 12  ions cm −2 to create post-deposition defects. While the film deposited under 0.1 mTorr oxygen partial pressure retains its crystallinity showing radiation-resistant behaviour even at a fluence of 1 × 10 12  ions cm −2 , films deposited under 1 to 300 mTorr oxygen partial pressure becomes almost amorphous at the same fluence. Using Poisson's law, the diameter of the amorphized region surrounding the ion path is calculated to be ∼4.2 nm from the x-ray diffraction peak intensity ((1 1 0) for rutile phase) as a function of ion fluence. The saturation magnetization (M s ) decreases exponentially similar to the decrease in x-ray peak intensity with fluence, indicating magnetic disordered region surrounding the ion path. The diameter of the magnetic disordered region is found to be ∼6.6 nm which is larger than the diameter of the amorphized latent track. Therefore, it is confirmed that swift heavy ion irradiation induces a more significant magnetic disorder than the structural disorder. (paper)

  13. Computer simulation and experimental self-assembly of irradiated glycine amino acid under magnetic fields: Its possible significance in prebiotic chemistry.

    Heredia, Alejandro; Colín-García, María; Puig, Teresa Pi I; Alba-Aldave, Leticia; Meléndez, Adriana; Cruz-Castañeda, Jorge A; Basiuk, Vladimir A; Ramos-Bernal, Sergio; Mendoza, Alicia Negrón

    2017-12-01

    Ionizing radiation may have played a relevant role in chemical reactions for prebiotic biomolecule formation on ancient Earth. Environmental conditions such as the presence of water and magnetic fields were possibly relevant in the formation of organic compounds such as amino acids. ATR-FTIR, Raman, EPR and X-ray spectroscopies provide valuable information about molecular organization of different glycine polymorphs under static magnetic fields. γ-glycine polymorph formation increases in irradiated samples interacting with static magnetic fields. The increase in γ-glycine polymorph agrees with the computer simulations. The AM1 semi-empirical simulations show a change in the catalyst behavior and dipole moment values in α and γ-glycine interaction with the static magnetic field. The simulated crystal lattice energy in α-glycine is also affected by the free radicals under the magnetic field, which decreases its stability. Therefore, solid α and γ-glycine containing free radicals under static magnetic fields might have affected the prebiotic scenario on ancient Earth by causing the oligomerization of glycine in prebiotic reactions. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Mechanical-property changes of structural composite materials after low-temperature proton irradiation: Implications for use in SSC magnet systems

    Morena, J.; Snead, C.L. Jr.; Czajkowski, C.; Skaritka, J.

    1993-01-01

    Longterm physical, mechanical, electrical, and other properties of advanced composites, plastics, and other polymer materials are greatly affected by high-energy proton, neutron, electron, and gamma radiation. The effects of high-energy particles on materials is a critical design parameter to consider when choosing polymeric structural, nonstructural, and elastomeric matrix resin systems. Polymer materials used for filled resins, laminates, seals, gaskets, coatings, insulation and other nonmetallic components must be chosen carefully, and reference data viewed with caution. Most reference data collected in the high-energy physics community to date reflects material property degradation using other than proton irradiations. In most instances, the data were collected for room-temperature irradiations, not 4.2 K or other cryogenic temperatures, and at doses less than 10 8 --10 9 Rad. Energetic proton (and the accompanying spallation-product particles) provide good simulation fidelity to the expected radiation fields predicted for the cold-mass regions of the SSC magnets, especially the corrector magnets. The authors present here results for some structural composite materials which were part of a larger irradiation-characterization of polymeric materials for SSC applications

  15. Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS2 Films and Their Homojunction.

    Qin, Jing-Kai; Shao, Wen-Zhu; Xu, Cheng-Yan; Li, Yang; Ren, Dan-Dan; Song, Xiao-Guo; Zhen, Liang

    2017-05-10

    Substitutional doping of transition metal dichalcogenide two-dimensional materials has proven to be effective in tuning their intrinsic properties, such as band gap, transport characteristics, and magnetism. In this study, we realized substitutional doping of monolayer rhenium disulfide (ReS 2 ) with Mo via chemical vapor deposition. Scanning transmission electron microscopy demonstrated that Mo atoms are successfully doped into ReS 2 by substitutionally replacing Re atoms in the lattice. Electrical measurements revealed the degenerate p-type semiconductor behavior of Mo-doped ReS 2 field effect transistors, in agreement with density functional theory calculations. The p-n diode device based on a doped ReS 2 and ReS 2 homojunction exhibited gate-tunable current rectification behaviors, and the maximum rectification ratio could reach up to 150 at V d = -2/+2 V. The successful synthesis of p-type ReS 2 in this study could largely promote its application in novel electronic and optoelectronic devices.

  16. Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

    Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

    2016-08-01

    Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

  17. Investigation of Landau level spin reversal in (110) oriented p-type GaAs quantum wells

    Isik, Nebile

    2009-09-01

    In this thesis, the Landau level crossing or anticrossing of hole levels has been investigated in p-type GaAs 400 Aa wide quantum wells. In magneto-transport measurements, this is evidenced with the presence of an anomalous peak in the longitudinal resistance measurements at {nu}=1. In the transversal resistance measurements, no signature of this anomalous peak is observed. By increasing the hole density in the quantum well by applying a top gate voltage, the position of the anomalous peak shifts to higher magnetic fields. At very high densities, anomalous peak disappears. By applying a back gate voltage, the electric field in the quantum well is tuned. A consequence is that the geometry of the quantum well is tuned from square to triangular. The anomalous peak position is shown to depend also on the back gate voltage applied. Temperature dependence of the peak height is consistent with thermal activation energy gap ({delta}/2= 135 {mu}eV). The activation energy gap as a function of the magnetic field has a parabolic like dependence, with the minimum of 135 {mu}eV at 4 T. The peak magnitude is observed to decrease with increasing temperature. An additional peak is observed at {nu}=2 minimum. This additional peak at {nu}=2 might be due to the higher Landau level crossing. The p-type quantum wells have been investigated by photoluminescence spectroscopy, as a function of the magnetic field. The polarization of the emitted light has been analyzed in order to distinguish between the transitions related to spin of electron {+-} 1/2 and spin of hole -+ 3/2. The transition energies of the lowest electron Landau levels with spin {+-} 1/2 and hole Landau levels with spin -+ 3/2 versus magnetic field show crossing at 4 T. The heavy hole Landau levels with spins {+-} 3/2 are obtained by the substraction of transition energies from the sum of lowest electron Landau level energy and the energy gap of GaAs. The heavy hole Landau levels show a crossing at 4 T. However, due to the

  18. Effects of Nd:YAG laser irradiation on structural and magnetic properties of Li{sub 0.5}Fe{sub 2.5}O{sub 4}

    Mane, Maheshkumar L. [Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (M.S.) 431004 (India); Sundar, R.; Ranganathan, K.; Oak, S.M. [Solid State Laser Division, Raja Raman Research Center for Advanced Technology, Indore (M.P.) (India); Jadhav, K.M., E-mail: drkmjadhav@yahoo.co [Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (M.S.) 431004 (India)

    2011-02-15

    In the present paper we report our results on the effect of Nd:YAG laser irradiation on the structural and magnetic properties of Li{sub 0.5}Fe{sub 2.5}O{sub 4} spinel ferrite prepared by solid-state reaction technique. X-ray diffraction analysis was carried out to confirm the formation of the single phase cubic spinel structure. The lattice constant calculated from X-ray diffraction data (XRD) goes on increasing with non irradiated phase to exceeding higher doses of irradiation. The distribution of the substituted ions over the different lattice sites is determined from XRD and infrared spectra. The damage structure and morphological investigations were carried out by using scanning electron microscopy and transmission electron microscopy techniques. It has been observed from our data on magnetic properties that laser irradiation severely affects the magnetization. From the magnetization measurements it has been observed that the saturation magnetization decreases with increase in the laser dose rate. The observed reduction in the saturation magnetization after irradiation is understood on the basis of the partial formation of paramagnetic centers and rearrangement of cations in the lattice.

  19. Formation of Ga2O3 by the oxidation of p-type GaN thin films

    Pinnisch, Melanie; Reppin, Daniel; Stehr, Jan; Laufer, Andreas; Hofmann, Detlev M.; Meyer, Bruno K. [1. Physikalisches Institut, Justus-Liebig-University, Giessen (Germany)

    2010-07-01

    Both GaN and Ga{sub 2}O{sub 3} are wide band gap semiconductors with energies of 3.45 eV and 4.9 eV, respectively. While GaN can be achieved p- or n-type conducting by doping, Ga{sub 2}O{sub 3} is n-type or high resistive dependent on the presence of oxygen vacancies. We studied the conversion of p-type Mg doped GaN thin films to Ga{sub 2}O{sub 3} by thermal treatments in the temperature range from 600 C to 1200 C and in different atmospheres. Changes of the film properties were studied by means of X-ray diffraction, photo-electron spectroscopy and atomic force microscopy. Optical and magnetic resonance methods were used to investigate the evolution of the dopands and defects.

  20. Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

    2006-09-21

    Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

  1. Effect of γ-rays irradiation on the structural, magnetic, and electrical properties of Mg–Cu–Zn and Ni–Cu–Zn ferrites

    Assar, S.T.; Abosheiasha, H.F., E-mail: Hatem_fouad@f-eng.tanta.edu.eg; El Sayed, A.R.

    2017-01-01

    Nanoparticles of Ni{sub 0.35}Cu{sub 0.15}Zn{sub 0.5}Fe{sub 2}O{sub 4} and Mg{sub 0.35}Cu{sub 0.15}Zn{sub 0.5}Fe{sub 2}O{sub 4}, have been synthesized by citrate precursor method. Then some of the prepared samples have been irradiated by γ-rays of {sup 60}Co radioactive source at room temperature with doses of 1 Mrad and 2 Mrad, at a dose rate of 0.1 Mrad/h to study the effect of γ-rays irradiation on some structural, magnetic and electrical properties of the samples. The X-ray diffraction analysis (XRD), transmission electron microscopy, Fourier transform infrared spectroscopy and vibrating sample magnetometer measurements have been used to investigate the samples. The XRD results show that the irradiation has caused a decrease in the crystallite size and the measured density and an increase in the porosity, specific surface area, and microstrain in the case of Ni–Cu–Zn ferrite whereas in the case of Mg–Cu–Zn ferrite the reverse trend has been noticed. The lattice constant of the investigated samples has been increased with the increase of irradiation due to the conversion of Fe{sup 3+} (0.67 Å) to Fe{sup 2+} (0.76 Å). The magnetization results show an increase in saturation and remnant magnetizations for the two prepared ferrites after γ-rays irradiation. The main reason of this behavior is most probably due to the redistribution of the cations between A and B sites. The cation distribution has been proposed such that the values of theoretical and experimental magnetic moment are identical and increase as the magnetization increases. Moreover, a theoretical estimation of the lattice constant has been calculated on the basis of the proposed cation distribution for each sample and compared with the corresponding experimental values obtained by XRD analysis; where they have been found in a good agreement with each other. This can be considered as another confirmation of the validity of the cation distribution. Moreover, the cation distribution is thought

  2. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  3. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

    2016-01-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  4. Chemical-free n-type and p-type multilayer-graphene transistors

    Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com [Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402 (United States); Eisaman, M. D. [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794 (United States); Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794 (United States)

    2016-08-01

    A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

  5. Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

    Matteo Bonomo

    2016-05-01

    Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

  6. Formation of p-type ZnO thin film through co-implantation

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  7. Characterization of plasma etching damage on p-type GaN using Schottky diodes

    Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

  8. Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

    Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

    2010-07-15

    Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. A cocatalyst-free Eosin Y-sensitized p-type of Co₃O₄ quantum dot for highly efficient and stable visible-light-driven water reduction and hydrogen production.

    Zhang, Ning; Shi, Jinwen; Niu, Fujun; Wang, Jian; Guo, Liejin

    2015-09-07

    Owing to the effect of energy band bending, p-type Co3O4 quantum dots sensitized by Eosin Y showed a high and stable photocatalytic activity (∼13,440 μmol h(-1) g(-1)(cat)) for water reduction and hydrogen production under visible-light irradiation without any cocatalyst.

  10. Determination of the inferior border of the thecal sac using magnetic resonance imaging: implications on craniospinal irradiation

    Scharf, Carole B.; Goldberg, Kenneth; Paulino, Arnold C.

    1996-01-01

    Purpose: Craniospinal irradiation (CSI) is employed in medulloblastoma and other intracranial malignancies that can seed the neuro axis. Care must be taken to adequately cover the entire craniospinal axis, including the distal thecal sac. The inferior border of the craniospinal field has traditionally been placed at the bottom of the S2 vertebra. The purpose of this study is to review the level of thecal sac termination in children undergoing CSI using Magnetic Resonance Imaging (MRI). Methods and Materials: From (12(87)) to (10(95)), 22 children were treated with CSI at one institution. All underwent pre-treatment MRI of the spine with Gadolinium as part of their evaluation. The median age was 9 years (range, 31 months to 18 years), and there were 14 males and 8 females. The diagnosis was medulloblastoma in 14 patients, primitive neuroectodermal tumor of the cerebrum in 3, germinoma in 2, pineoblastoma in 1, leptomeningeal gliomatosis in 1 and glioblastoma multiform in 1. All spinal MRIs were reviewed by both neuro radiologist and radiation oncologist to accurately determine the level of thecal sac termination which was obtained by drawing a horizontal line from the lower limit of the spinal theca to the corresponding adjacent vertebral body. Results: The thecal sac termination varied from mid S1 to lower S3. It was located at mid S1 in 1 patient, lower S1 in 3, S1-2 junction in 3, upper S2 in 5, mid S2 in 3, lower S2 in 3, S2-3 junction in 2, upper S3 in 1 and lower S3 in 1. Only (2(22)) patients (9%) had thecal sac terminations below the S2-3 junction. Eight patients had spinal axis involvement and their thecal sac terminations were all above the S2-3 junction. There was no correlation between the level of termination and age, gender or histology. Conclusions: The majority of patients (91%) will have termination of the thecal sac above S3, and therefore placement of the inferior border of the spinal field at the S2-3 junction with a 1 cm caudal margin will be

  11. A Prospective Study of the Utility of Magnetic Resonance Imaging in Determining Candidacy for Partial Breast Irradiation

    Dorn, Paige L.; Al-Hallaq, Hania A.; Haq, Farah; Goldberg, Mira [Department of Radiation and Cellular Oncology, University of Chicago Medical Center, Chicago, Illinois (United States); Abe, Hiroyuki [Department of Radiology, University of Chicago Medical Center, Chicago, Illinois (United States); Hasan, Yasmin [Department of Radiation and Cellular Oncology, University of Chicago Medical Center, Chicago, Illinois (United States); Chmura, Steven J., E-mail: schmura@radonc.uchicago.edu [Department of Radiation and Cellular Oncology, University of Chicago Medical Center, Chicago, Illinois (United States)

    2013-03-01

    Purpose: Retrospective data have demonstrated that breast magnetic resonance imaging (MRI) may change a patient's eligibility for partial breast irradiation (PBI) by identifying multicentric, multifocal, or contralateral disease. The objective of the current study was to prospectively determine the frequency with which MRI identifies occult disease and to establish clinical factors associated with a higher likelihood of MRI prompting changes in PBI eligibility. Methods and Materials: At The University of Chicago, women with breast cancer uniformly undergo MRI in addition to mammography and ultrasonography. From June 2009 through May 2011, all patients were screened prospectively in a multidisciplinary conference for PBI eligibility based on standard imaging, and the impact of MRI on PBI eligibility according to National Surgical Adjuvant Breast and Bowel Project protocol B-39/Radiation Therapy Oncology Group protocol 0413 entry criteria was recorded. Univariable analysis was performed using clinical characteristics in both the prospective cohort and in a separate cohort of retrospectively identified patients. Pooled analysis was used to derive a scoring index predictive of the risk that MRI would identify additional disease. Results: A total of 521 patients were screened for PBI eligibility, and 124 (23.8%) patients were deemed eligible for PBI based on standard imaging. MRI findings changed PBI eligibility in 12.9% of patients. In the pooled univariable analysis, tumor size ≥2 cm on mammography or ultrasonography (P=.02), age <50 years (P=.01), invasive lobular histology (P=.01), and HER-2/neu amplification (P=.01) were associated with a higher likelihood of MRI changing PBI eligibility. A predictive score was generated by summing the number of significant risk factors. Patients with a score of 0, 1, 2, and 3 had changes to eligibility based on MRI findings in 2.8%, 13.2%, 38.1%, and 100%, respectively (P<.0001). Conclusions: MRI identified additional

  12. Undoped p-type GaN1-xSbx alloys: Effects of annealing

    Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

    2016-12-01

    We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

  13. Secondary ion mass spectrometry analysis of In-doped p-type GaN films

    Chiou, C.Y.; Wang, C.C.; Ling, Y.C.; Chiang, C.I.

    2003-01-01

    SIMS was used to investigate the isoelectronic In-doped p-type GaN films. The growth rate of the p-type GaN film decreased with increasing Mg and In doping. The Mg saturation in GaN was 3.55x10 19 atoms/cm 3 . The role of In as surfactant was evaluated by varying In concentrations and it was observed that the surface appeared smooth with increasing In incorporation. The Mg solubility in p-type GaN improved to 0.0025% molar ratio of the GaN with In incorporation. The In concentration results observed in neutron activation analysis (NAA) were found to be higher by a factor of 2.88 than that observed in SIMS and can be attributed to the difference in sensitivity of the two techniques. Good linearity in the results was observed from both techniques

  14. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    Caraveo-Frescas, J. A.

    2013-11-25

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

  15. A simple model to estimate the optimal doping of p - Type oxide superconductors

    Adir Moysés Luiz

    2008-12-01

    Full Text Available Oxygen doping of superconductors is discussed. Doping high-Tc superconductors with oxygen seems to be more efficient than other doping procedures. Using the assumption of double valence fluctuations, we present a simple model to estimate the optimal doping of p-type oxide superconductors. The experimental values of oxygen content for optimal doping of the most important p-type oxide superconductors can be accounted for adequately using this simple model. We expect that our simple model will encourage further experimental and theoretical researches in superconducting materials.

  16. Hall and thermoelectric evaluation of p-type InAs

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  17. In and out of the cation pumps: P-type ATPase structure revisited

    Bublitz, Maike; Poulsen, Hanne; Morth, Jens Preben

    2010-01-01

    Active transport across membranes is a crucial requirement for life. P-type ATPases build up electrochemical gradients at the expense of ATP by forming and splitting a covalent phosphoenzyme intermediate, coupled to conformational changes in the transmembrane section where the ions are translocated....... The marked increment during the last three years in the number of crystal structures of P-type ATPases has greatly improved our understanding of the similarities and differences of pumps with different ion specificities, since the structures of the Ca2+-ATPase, the Na+,K+-ATPase and the H+-ATPase can now...

  18. High surface hole concentration p-type GaN using Mg implantation

    Long Tao; Zhang Guo Yi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  19. Optical properties of Mg doped p-type GaN nanowires

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

    2015-06-01

    Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

  20. Dual ohmic contact to N- and P-type silicon carbide

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  1. On the feasibility of p-type Ga2O3

    Kyrtsos, Alexandros; Matsubara, Masahiko; Bellotti, Enrico

    2018-01-01

    We investigate the various cation substitutional dopants in Ga2O3 for the possibility of p-type conductivity using density functional theory. Our calculations include both standard density functional theory and hybrid functional calculations. We demonstrate that all the investigated dopants result in deep acceptor levels, not able to contribute to the p-type conductivity of Ga2O3. In light of these results, we compare our findings with other wide bandgap oxides and reexamine previous experiments on zinc doping in Ga2O3.

  2. Subband structure comparison between n- and p- type double delta-doped Ga As quantum wells

    Rodriguez V, I.; Gaggero S, L.M.

    2004-01-01

    We compute the electron level structure (n-type) and the hole subband structure (p-type) of double -doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD Also our results agree with the experimental data available. (Author) 33 refs., 2 tabs., 5 figs

  3. Hall and thermoelectric evaluation of p-type InAs

    Wagener, M.C.; Wagener, V.; Botha, J.R.

    2009-01-01

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  4. Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

    Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

    2005-01-01

    We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

  5. Demethoxycurcumin is a potent inhibitor of P-type ATPases from diverse kingdoms of life

    Dao, Trong Tuan; Sehgal, Pankaj; Thanh Tung, Truong

    2016-01-01

    the curcuminoids, demethoxycurcumin was the most potent inhibitor of all tested P-type ATPases from fungal (Pma1p; H+-ATPase), plant (AHA2; H+-ATPase) and animal (SERCA; Ca2+-ATPase) cells. All three curcuminoids acted as non-competitive antagonist to ATP and hence may bind to a highly conserved allosteric site...

  6. Room temperature deposition of amorphous p-type CuFeO2 and ...

    fabrication of CuFeO2/n-Si heterojunction by RF sputtering method. TAO ZHU1 ... Transparent conducting amorphous p-type CuFeO2 (CFO) thin film was prepared by radio-frequency ... Delafossite oxides CuMO2 (M is trivalent cation, such as.

  7. Room temperature deposition of amorphous p-type CuFeO2 and ...

    2Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China. 3University of Science and Technology of China, Hefei 230026, China. MS received 14 October 2015; accepted 28 December 2015. Abstract. Transparent conducting amorphous p-type CuFeO2 (CFO) thin film was prepared by ...

  8. Theory of Persistent, P-Type, Metallic Conduction in C-GeTe

    Edwards, Arthur H; Pineda, Andrew C; Schultz, Peter A; Martin, Marcus G; Thompson, Aidan P; Hjalmarson, Harold P

    2005-01-01

    .... However, it always displays p-type metallic conduction. This behavior is also observed in other chalcogenide materials, including Ge2Sb2Te5, commonly used for optically and electrically switched, non-volatile memory, and so is or great interest...

  9. Tetrahydrocarbazoles are a novel class of potent P-type ATPase inhibitors with antifungal activity

    Bublitz, Maike; Kjellerup, Lasse; Cohrt, Karen O.Hanlon

    2018-01-01

    We have identified a series of tetrahydrocarbazoles as novel P-type ATPase inhibitors. Using a set of rationally designed analogues, we have analyzed their structure-activity relationship using functional assays, crystallographic data and computational modeling. We found that tetrahydrocarbazoles...

  10. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    Caraveo-Frescas, J. A.; Alshareef, Husam N.

    2013-01-01

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p

  11. Ge-intercalated graphene: The origin of the p-type to n-type transition

    Kaloni, Thaneshwor P.; Kahaly, M. Upadhyay; Cheng, Yingchun; Schwingenschlö gl, Udo

    2012-01-01

    deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition

  12. Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

    Hota, Mrinal Kanti; Hedhili, Mohamed N.; Wang, Qingxiao; Melnikov, Vasily; Mohammed, Omar F.; Alshareef, Husam N.

    2015-01-01

    Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2

  13. Characterization of 3D-DDTC detectors on p-type substrates

    Betta, G -F Dalla; Bosisio, Luciano; Darbo, Giovanni; Gabos, Paolo; Gemme, Claudia; Koehler, Michael; La Rosa, Alessandro; Parzefall, Ulrich; Pernegger, Heinz; Piemonte, Claudio; Povoli, Marco; Rachevskaia, Irina; Ronchin, Sabina; Wiik, Liv; Zoboli, Aanrea; Zorzi, Nicola

    2009-01-01

    We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.

  14. P-type silicon surface barrier detector used for x-ray dosimetry

    Yamamoto, Hisao; Hatakeyama, Satoru; Norimura, Toshiyuki; Tsuchiya, Takehiko

    1983-01-01

    Responses to X-rays of a P-type surface barrier detector fabricated in our laboratory were studied, taking into consideration the dependence on the temperature in order to examine its applicability to dosimetry of short-range radiation. The study was also made in the case of N-type surface barrier detector. At room temperature, the short-circuit current increased linearly with exposure dose rate (15 - 50 R/min) for N- and P-type detectors. The open-circuit voltage showed a nonlinear dependence. With increasing temperature, the short-circuit current for the N-type detector was approximately constant up to 30 0 C and then decreased, though the open-circuit voltage decreased linearly. For the P- type detector, both open-circuit voltage and short-circuit current decreased almost linearly with increasing temperature. While a P-type detector is still open to some improvements, these results indicate that it can be used as a dosimeter. (author)

  15. Structure and mechanism of Zn2+-transporting P-type ATPases

    Wang, Kaituo; Sitsel, Oleg; Meloni, Gabriele

    2014-01-01

    Zinc is an essential micronutrient for all living organisms. It is required for signalling and proper functioning of a range of proteins involved in, for example, DNA binding and enzymatic catalysis1. In prokaryotes and photosynthetic eukaryotes, Zn2+-transporting P-type ATPases of class IB (Znt...

  16. Electrical Properties Of Amorphous Selenium (aSe)/p-Type Silicon ...

    aSe) on four chemically etched p-type silicon crystals (pSi) each of 5Ω-cm resistivity and carrier concentration of 2.8x1015cm-3. Two of the pSi crystals have surface orientation of (111) while the other two crystals have (100) surface orientation.

  17. Structural and magnetic properties of nano-sized NiCuZn ferrites synthesized by co-precipitation method with ultrasound irradiation

    Harzali, Hassen, E-mail: harzali@mines-albi.fr [Laboratory of Applied Mineral Chemistry, Faculty of Sciences, University Tunis ElManar, Campus University, Farhat Hached El-Manar, 2092 Tunis (Tunisia); Saida, Fairouz; Marzouki, Arij; Megriche, Adel [Laboratory of Applied Mineral Chemistry, Faculty of Sciences, University Tunis ElManar, Campus University, Farhat Hached El-Manar, 2092 Tunis (Tunisia); Baillon, Fabien; Espitalier, Fabienne [Université de Toulouse, Mines Albi, CNRS, Centre RAPSODEE, Campus Jarlard, F-81013 Albi CT cedex 09 (France); Mgaidi, Arbi [Laboratory of Applied Mineral Chemistry, Faculty of Sciences, University Tunis ElManar, Campus University, Farhat Hached El-Manar, 2092 Tunis (Tunisia); Taibah University, Faculty of Sciences & art, Al Ula (Saudi Arabia)

    2016-12-01

    Sonochemically assisted co-precipitation has been used to prepare nano-sized Ni–Cu–Zn-ferrite powders. A suspension of constituent hydroxides was ultrasonically irradiated for various times at different temperatures with high intensity ultrasound radiation using a direct immersion titanium horn. Structural and magnetic properties were investigated using X-diffraction (XRD), FT-IR spectroscopy, transmission electron microscopy (TEM), Nitrogen adsorption at 77 K (BET) and Vibrating sample magnetometer (VSM). Preliminary experimental results relative to optimal parameters showed that reaction time t=2 h, temperature θ=90 °C and dissipated Power P{sub diss}=46.27 W. At these conditions, this work shows the formation of nanocrystalline single-phase structure with particle size 10–25 nm. Also, ours magnetic measurements proved that the sonochemistry method has a great influence on enhancing the magnetic properties of the ferrite. - Highlights: • Coprecipitation experiments were carried out with ultrasound. • The spinel ferrite NiCuZn was perfectly synthesized by ultrasound. • The saturation magnetization and crystals size are found to be correlated as the dissipated power was varied.

  18. Structural and magnetic properties of nano-sized NiCuZn ferrites synthesized by co-precipitation method with ultrasound irradiation

    Harzali, Hassen; Saida, Fairouz; Marzouki, Arij; Megriche, Adel; Baillon, Fabien; Espitalier, Fabienne; Mgaidi, Arbi

    2016-01-01

    Sonochemically assisted co-precipitation has been used to prepare nano-sized Ni–Cu–Zn-ferrite powders. A suspension of constituent hydroxides was ultrasonically irradiated for various times at different temperatures with high intensity ultrasound radiation using a direct immersion titanium horn. Structural and magnetic properties were investigated using X-diffraction (XRD), FT-IR spectroscopy, transmission electron microscopy (TEM), Nitrogen adsorption at 77 K (BET) and Vibrating sample magnetometer (VSM). Preliminary experimental results relative to optimal parameters showed that reaction time t=2 h, temperature θ=90 °C and dissipated Power P_d_i_s_s=46.27 W. At these conditions, this work shows the formation of nanocrystalline single-phase structure with particle size 10–25 nm. Also, ours magnetic measurements proved that the sonochemistry method has a great influence on enhancing the magnetic properties of the ferrite. - Highlights: • Coprecipitation experiments were carried out with ultrasound. • The spinel ferrite NiCuZn was perfectly synthesized by ultrasound. • The saturation magnetization and crystals size are found to be correlated as the dissipated power was varied.

  19. Simulation of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes

    Fernández-Martínez, P.; Pellegrini, G.; Balbuena, J.P.; Quirion, D.; Hidalgo, S.; Flores, D.; Lozano, M.; Casse, G.

    2011-01-01

    This paper shows the simulation results of new p-type strip detectors with trench electrodes to enhance the charge multiplication effect in the irradiated detector. The new design includes baby microstrip detectors (area=1 cm 2 ) with a strip pitch of 80 μm and p-stop isolation structures. The strip has a 5 μm-wide trench along all its length, filled and doped with polysilicon to create a deep N + contact into the material bulk. The trench depth can be varied in order to study the influence of the electric field on the charge multiplication effect in heavily irradiated samples. Some alternative designs have also been studied to establish a comparison between various structures using different technologies. Simulation reproduce the electrical behaviour under different irradiation conditions, taking into account the damage accumulated after irradiation with neutrons and protons with several fluence values. The investigation of these effects provides important indications on the ability of this modified electrode geometry to control and optimise the charge multiplication effect, in order to fully recover the collection efficiency of heavily irradiated microstrip detectors, at reasonable bias voltage compatible with the voltage feed limitation of the CERN SLHC experiments.

  20. MAGNET

    by B. Curé

    2011-01-01

    The magnet operation was very satisfactory till the technical stop at the end of the year 2010. The field was ramped down on 5th December 2010, following the successful regeneration test of the turbine filters at full field on 3rd December 2010. This will limit in the future the quantity of magnet cycles, as it is no longer necessary to ramp down the magnet for this type of intervention. This is made possible by the use of the spare liquid Helium volume to cool the magnet while turbines 1 and 2 are stopped, leaving only the third turbine in operation. This obviously requires full availability of the operators to supervise the operation, as it is not automated. The cryogenics was stopped on 6th December 2010 and the magnet was left without cooling until 18th January 2011, when the cryoplant operation resumed. The magnet temperature reached 93 K. The maintenance of the vacuum pumping was done immediately after the magnet stop, when the magnet was still at very low temperature. Only the vacuum pumping of the ma...

  1. Effects of 3.1-MeV proton and 1-GeV Au-ion irradiation on the magnetic flux noise and critical current of YBa2Cu3O7-δ

    Shaw, T.J.; Clarke, J.; van Dover, R.B.; Schneemeyer, L.F.; White, A.E.

    1996-01-01

    We have used a dc superconducting quantum interference device to measure the spectral density of magnetic flux noise, S Φ (f), generated by vortex motion in crystals of YBa 2 Cu 3 O 7-δ (YBCO) both before and after irradiation with 3.1-MeV protons and 1-GeV Au ions. In addition, we have studied the effects of irradiation on the critical current J c of the same samples. Both types of irradiation reduced S Φ (f) at most temperatures and magnetic fields and increased J c at all temperatures and magnetic fields. By measuring S Φ (f) versus temperature, we extract the distribution of vortex pinning energies, D(U 0 ). Both crystals have peaks in D(U 0 ) near 0.1 eV and 0.2 eV before irradiation, and a much reduced peak near 0.1 eV after irradiation. The noise level after either kind of irradiation was substantially higher than in an unirradiated YBCO film. copyright 1996 The American Physical Society

  2. P-type sp3-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method

    Komatsu, Shojiro; Nagata, Takahiro; Chikyo, Toyohiro; Sato, Yuhei; Watanabe, Takayuki; Hirano, Daisuke; Takizawa, Takeo; Nakamura, Katsumitsu; Hashimoto, Takuya; Nakamura, Takuya; Koga, Kazunori; Shiratani, Masaharu; Yamamoto, Atsushi

    2009-01-01

    A heterojunction of p-type sp 3 -bonded boron nitride (BN) and n-type Si fabricated by laser-plasma synchronous chemical vapour deposition (CVD) showed excellent rectifying properties and proved to work as a solar cell with photovoltaic conversion efficiency of 1.76%. The BN film was deposited on an n-type Si (1 0 0) substrate by plasma CVD from B 2 H 6 + NH 3 + Ar while doping of Si into the BN film was induced by the simultaneous irradiation of an intense excimer laser with a pulse power of 490 mJ cm -2 , at a wavelength of 193 nm and at a repetition rate of 20 Hz. The source of dopant Si was supposed to be the Si substrate ablated at the initial stage of the film growth. The laser enhanced the doping (and/or diffusion) of Si into BN as well as the growth of sp 3 -bonded BN simultaneously in this method. P-type conduction of BN films was determined by the hot (thermoelectric) probe method. The BN/Si heterodiode with an essentially transparent p-type BN as a front layer is supposed to efficiently absorb light reaching the active region so as to potentially result in high efficiency.

  3. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers.

    Wei, Chun-You; Lin, Chu-Hsuan; Hsiao, Hao-Tse; Yang, Po-Chuan; Wang, Chih-Ming; Pan, Yen-Chih

    2013-11-22

    Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

  4. P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

    le Febvrier, Arnaud; Van Nong, Ngo; Abadias, Gregory; Eklund, Per

    2018-05-01

    Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

  5. In and out of the cation pumps: P-type ATPase structure revisited

    Bublitz, Maike; Poulsen, Hanne; Morth, Jens Preben

    2010-01-01

    . The marked increment during the last three years in the number of crystal structures of P-type ATPases has greatly improved our understanding of the similarities and differences of pumps with different ion specificities, since the structures of the Ca2+-ATPase, the Na+,K+-ATPase and the H+-ATPase can now......Active transport across membranes is a crucial requirement for life. P-type ATPases build up electrochemical gradients at the expense of ATP by forming and splitting a covalent phosphoenzyme intermediate, coupled to conformational changes in the transmembrane section where the ions are translocated...... be compared directly. Mechanisms for ion gating, charge neutralization and backflow prevention are starting to emerge from comparative structural analysis; and in combination with functional studies of mutated pumps this provides a framework for speculating on how the ions are bound and released as well...

  6. Enhancement of p-type mobility in tin monoxide by native defects

    Granato, D. B.

    2013-05-31

    Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.

  7. Growth and characteristics of p-type doped GaAs nanowire

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2018-05-01

    The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

  8. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    Bianchi Granato, Danilo

    2012-05-01

    In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  9. Effect of compressive stress on stability of N-doped p-type ZnO

    Chen Xingyou; Zhang Zhenzhong; Jiang Mingming; Wang Shuangpeng; Li Binghui; Shan Chongxin; Liu Lei; Zhao Dongxu; Shen Dezhen; Yao Bin

    2011-01-01

    Nitrogen-doped p-type zinc oxide (p-ZnO:N) thin films were fabricated on a-/c-plane sapphire (a-/c-Al 2 O 3 ) by plasma-assisted molecular beam epitaxy. Hall-effect measurements show that the p-type ZnO:N on c-Al 2 O 3 degenerated into n-type after a preservation time; however, the one grown on a-Al 2 O 3 showed good stability. The conversion of conductivity in the one grown on c-Al 2 O 3 ascribed to the faster disappearance of N O and the growing N 2(O) , which is demonstrated by x-ray photoelectron spectroscopy (XPS). Compressive stress, caused by lattice misfit, was revealed by Raman spectra and optical absorption spectra, and it was regarded as the root of the instability in ZnO:N.

  10. Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

    Patra, Chandralina; Das, Debajyoti

    2018-04-01

    Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

  11. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    Lu, Ming-Pei

    2009-03-11

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.

  12. CALCULATING THE HABITABLE ZONE OF BINARY STAR SYSTEMS. II. P-TYPE BINARIES

    Haghighipour, Nader; Kaltenegger, Lisa

    2013-01-01

    We have developed a comprehensive methodology for calculating the circumbinary habitable zone (HZ) in planet-hosting P-type binary star systems. We present a general formalism for determining the contribution of each star of the binary to the total flux received at the top of the atmosphere of an Earth-like planet and use the Sun's HZ to calculate the inner and outer boundaries of the HZ around a binary star system. We apply our calculations to the Kepler's currently known circumbinary planetary systems and show the combined stellar flux that determines the boundaries of their HZs. We also show that the HZ in P-type systems is dynamic and, depending on the luminosity of the binary stars, their spectral types, and the binary eccentricity, its boundaries vary as the stars of the binary undergo their orbital motion. We present the details of our calculations and discuss the implications of the results

  13. CALCULATING THE HABITABLE ZONE OF BINARY STAR SYSTEMS. II. P-TYPE BINARIES

    Haghighipour, Nader [Institute for Astronomy and NASA Astrobiology Institute, University of Hawaii-Manoa, Honolulu, HI 96822 (United States); Kaltenegger, Lisa [MPIA, Koenigstuhl 17, Heidelberg, D-69117 (Germany)

    2013-11-10

    We have developed a comprehensive methodology for calculating the circumbinary habitable zone (HZ) in planet-hosting P-type binary star systems. We present a general formalism for determining the contribution of each star of the binary to the total flux received at the top of the atmosphere of an Earth-like planet and use the Sun's HZ to calculate the inner and outer boundaries of the HZ around a binary star system. We apply our calculations to the Kepler's currently known circumbinary planetary systems and show the combined stellar flux that determines the boundaries of their HZs. We also show that the HZ in P-type systems is dynamic and, depending on the luminosity of the binary stars, their spectral types, and the binary eccentricity, its boundaries vary as the stars of the binary undergo their orbital motion. We present the details of our calculations and discuss the implications of the results.

  14. MAGNET

    Benoit Curé

    2010-01-01

    Operation of the magnet has gone quite smoothly during the first half of this year. The magnet has been at 4.5K for the full period since January. There was an unplanned short stop due to the CERN-wide power outage on May 28th, which caused a slow dump of the magnet. Since this occurred just before a planned technical stop of the LHC, during which access in the experimental cavern was authorized, it was decided to leave the magnet OFF until 2nd June, when magnet was ramped up again to 3.8T. The magnet system experienced a fault also resulting in a slow dump on April 14th. This was triggered by a thermostat on a filter choke in the 20kA DC power converter. The threshold of this thermostat is 65°C. However, no variation in the water-cooling flow rate or temperature was observed. Vibration may have been the root cause of the fault. All the thermostats have been checked, together with the cables, connectors and the read out card. The tightening of the inductance fixations has also been checked. More tem...

  15. MAGNET

    B. Curé

    2012-01-01

      The magnet was energised at the beginning of March 2012 at a low current to check all the MSS safety chains. Then the magnet was ramped up to 3.8 T on 6 March 2012. Unfortunately two days later an unintentional switch OFF of the power converter caused a slow dump. This was due to a misunderstanding of the CCC (CERN Control Centre) concerning the procedure to apply for the CMS converter control according to the beam-mode status at that time. Following this event, the third one since 2009, a discussion was initiated to define possible improvement, not only on software and procedures in the CCC, but also to evaluate the possibility to upgrade the CMS hardware to prevent such discharge from occurring because of incorrect procedure implementations. The magnet operation itself was smooth, and no power cuts took place. As a result, the number of magnetic cycles was reduced to the minimum, with only two full magnetic cycles from 0 T to 3.8 T. Nevertheless the magnet suffered four stops of the cryogeni...

  16. MAGNET

    B. Curé

    2012-01-01

      Following the unexpected magnet stops last August due to sequences of unfortunate events on the services and cryogenics [see CMS internal report], a few more events and initiatives again disrupted the magnet operation. All the magnet parameters stayed at their nominal values during this period without any fault or alarm on the magnet control and safety systems. The magnet was stopped for the September technical stop to allow interventions in the experimental cavern on the detector services. On 1 October, to prepare the transfer of the liquid nitrogen tank on its new location, several control cables had to be removed. One cable was cut mistakenly, causing a digital input card to switch off, resulting in a cold-box (CB) stop. This tank is used for the pre-cooling of the magnet from room temperature down to 80 K, and for this reason it is controlled through the cryogenics control system. Since the connection of the CB was only allowed for a field below 2 T to avoid the risk of triggering a fast d...

  17. Guided Growth of Horizontal p-Type ZnTe Nanowires

    2016-01-01

    A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor–liquid–solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means. PMID:27885331

  18. Doping process of p-type GaN nanowires: A first principle study

    Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu

    2017-10-01

    The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.

  19. Prospects and limitations for p-type doping in boron nitride polymorphs

    Weston, Leigh; van de Walle, Chris G.

    Using first-principles calculations, we examine the potential for p-type doping of BN polymorphs via substitutional impurities. Based on density functional theory with a hybrid functional, our calculations reveal that group-IV elements (C, Si) substituting at the N site result in acceptor levels that are more than 1 eV above the valence-band maximum in all of the BN polymorphs, and hence far too deep to allow for p-type doping. On the other hand, group-II elements (Be, Mg) substituting at the B site lead to shallower acceptor levels. However, for the ground-state hexagonal phase (h-BN), we show that p-type doping at the B site is inhibited by the formation of hole polarons. Our calculations reveal that hole localization is intrinsic to sp2 bonded h-BN, and this places fundamental limits on hole conduction in this material. In contrast, the sp3 bonded wurtzite (w-BN) and cubic (c-BN) polymorphs are capable of forming shallow acceptor levels. For Be dopants, the acceptor ionization energies are 0.31 eV and 0.24 eV for w-BN and c-BN, respectively; these values are only slightly larger than the ionization energy of the Mg acceptor in GaN. This work was supported by NSF.

  20. Optical and electrical properties of CuMO2 transparent p-type conductors

    Draeseke, A. D.; Jayaraj, M. K.; Ulbrich, T.; Kroupp, M.; Tate, J.; Nagarajan, R.; Oblezov, A.; Sleight, A. W.

    2001-03-01

    Wide band gap oxides of the type CuMO2 with the delafossite structure are p-type conductors and many of them are transparent. Films of these p-type oxides have been grown by sputtering and thermal evaporation, and characterized electrically and optically. We present transport and optical transmission measurements for CuY_1-xCa_xO_2, CuScO_2+x and other similar materials. Conductivities are in the range 1 200 S/cm and depend on details of film preparation. The carriers are p-type as determined by thermopower measurements, and typical Seebeck coefficients are several hundred µV/K. Optical transparency varies considerably, but is about 40% at 550 nm for the highest conductivity films. Excellent transparency can be achieved at the expense of conductivity, and optimization is being studied. Band gaps derived from optical transmission are larger than 3.1 eV. Prototype all-oxide pn diodes have been fabricated. This work was partially supported by the NSF under DMR-0071727 and by the Research Corporation under RA0291.

  1. Record mobility in transparent p-type tin monoxide films and devices by phase engineering

    Caraveo-Frescas, Jesus Alfonso

    2013-06-25

    Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.

  2. Charge recombination process in X-ray irradiated pyrene-doped polystyrene as studied by optically detected electron spin resonance and magnetic field dependence of the recombination fluorescence

    Okazaki, Masaharu; Tai, Yutaka; Toriyama, Kazumi

    1993-01-01

    The optically-detected ESR (ODESR) spectrum and magnetic field dependence on recombination fluorescence were observed for X-ray irradiated pyrene-doped polystyrene at temperatures of 242-348 K. The ODESR intensity as a function of the pyrene concentration, 0.1-8.9 wt%, showed an unusual minimum at about 1.0%. Two phases were separated in the magnetic field dependence of the fluorescence: one was sharp and saturates at fields of over 50 mT, while the other was broad with a dip at around 60-150 mT. The cause of this dip was naturally attributed to the ST -1 level crossing. The sharp magnetic field effect also showed a minimum at around a concentration of 1.0 wt%. These novel findings have been interpreted using a recombination model modified from the previous one for pyrene-doped ethylene-propylene rubber and polyethylene. The essential points of the present model are: (1) although electron hopping within the polystyrene molecule is rapid, electron transfer at the last step of recombination between the polystyrene anion and the pyrene cation proceeds at a moderate rate; (2) the hole-transfer rate in the polymer chain is moderate; (3) electron hopping between the doped pyrene molecules is very much dependent on the concentration; (4) hole hopping between the pyrenes is inhibited. (author)

  3. Photocatalytic degradation of methylene blue on magnetically separable MgFe2O4 under visible light irradiation

    Shahid, Muhammad

    2013-05-01

    A magnetically separable single-phase MgFe2O4 photocatalyst with a spinel crystal structure was synthesized by using the solid-state reaction method. The formation of spinel structure is confirmed by X-ray diffraction and Fourier transform infrared spectroscopy. The magnetic measurements showed that the photocatalyst material can be separated from water when an external magnetic field is added and redispersed into water solution after the external magnetic field is eliminated. It is one of the promising photocatalysts for waste water treatment. The photocatalytic activity of MgFe2O4 was investigated by using the photo-decomposition of methylene blue dye under visible light. The photoelectrochemical property of the MgFe2O4 was studied by measuring their photocurrent-potential behavior in 1 M NaOH electrolyte under AM 1.5100 mW cm-2 illumination. © 2013 Elsevier B.V. All rights reserved.

  4. TU-H-CAMPUS-TeP1-03: Magnetically Focused Proton Irradiation of Small Volume Radiosurgery Targets

    McAuley, GA; Slater, JM [Loma Linda University, Loma Linda, CA (United States); Wroe, AJ [Loma Linda University, Loma Linda, CA (United States); Loma Linda University Medical Center, Loma Linda, CA (United States)

    2016-06-15

    Purpose: To investigate the use of magnetic focusing for small volume proton radiosurgery targets using a triplet combination of quadrupole rare earth permanent magnet Halbach cylinder assemblies Methods: Fourteen quadrupole magnets consisting of 24 segments of radiation hard samarium-cobalt adhered into k=3 Halbach cylinders with various field gradients (100 to 250 T/m) were designed and manufactured. Triplet combinations of the magnets were placed on a positioning track on our Gantry 1 treatment table. Unmodulated 127 MeV proton beams with initial diameters of 3 to 20 mm were delivered to a water tank using single-stage scattering. Depth and transverse dose distributions were measured using a PTW PR60020 diode detector and EBT3 film, respectively. This data was compared with unfocused passively collimated beams. Monte Carlo simulations were also performed - both for comparison with experimental data and to further investigate the potential of triplet magnetic focusing. Results: Experimental results using 150 T/m gradient magnets and 15 to 20 mm initial diameter beams show peak to entrance dose ratios that are ∼ 43 to 48 % larger compared with spot size matched 8 mm collimated beams (ie, transverse profile full-widths at 90% maximum dose match within 0.5 mm of focused beams). In addition, the focusing beams were ∼ 3 to 4.4 times more efficient per MU in dose to target delivery. Additional results using different magnet combinations will also be presented. Conclusion: Our results suggest that triplet magnetic focusing could reduce entrance dose and beam number while delivering dose to small (∼≤ 10 mm diameter) radiosurgery targets in less time compared to unfocused beams. Immediate clinical applications include those associated with proton radiosurgery and functional radiosurgery of the brain and spine, however other treatment sites can be also envisioned. This project was sponsored with funding from the Department of Defense (DOD# W81XWH-BAA-10-1).

  5. Changes in cluster magnetism and suppression of local superconductivity in amorphous FeCrB alloy irradiated by Ar{sup +} ions

    Okunev, V.D., E-mail: okunev@mail.fti.ac.donetsk.ua [Donetsk Physiko-Technical Institute, Ukrainian Academy of Sciences, av. Nauki 46, 03028 Kiev (Ukraine); Samoilenko, Z.A. [Donetsk Physiko-Technical Institute, Ukrainian Academy of Sciences, av. Nauki 46, 03028 Kiev (Ukraine); Szymczak, H.; Szewczyk, A.; Szymczak, R.; Lewandowski, S.J.; Aleshkevych, P.; Malinowski, A.; Gierłowski, P.; Więckowski, J. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Wolny-Marszałek, M.; Jeżabek, M. [Institute of Nuclear Physics, Polish Academy of Sciences, Krakow (Poland); Varyukhin, V.N. [Donetsk Physiko-Technical Institute, Ukrainian Academy of Sciences, av. Nauki 46, 03028 Kiev (Ukraine); Antoshina, I.A. [Obninsk State Technical University of Atomic Energy, 249020 Obninsk (Russian Federation)

    2016-02-01

    We show that cluster magnetism in ferromagnetic amorphous Fe{sub 67}Cr{sub 18}B{sub 15} alloy is related to the presence of large, D=150–250 Å, α-(Fe Cr) clusters responsible for basic changes in cluster magnetism, small, D=30–100 Å, α-(Fe, Cr) and Fe{sub 3}B clusters and subcluster atomic α-(Fe, Cr, B) groupings, D=10–20 Å, in disordered intercluster medium. For initial sample and irradiated one (Φ=1.5×10{sup 18} ions/cm{sup 2}) superconductivity exists in the cluster shells of metallic α-(Fe, Cr) phase where ferromagnetism of iron is counterbalanced by antiferromagnetism of chromium. At Φ=3×10{sup 18} ions/cm{sup 2}, the internal stresses intensify and the process of iron and chromium phase separation, favorable for mesoscopic superconductivity, changes for inverse one promoting more homogeneous distribution of iron and chromium in the clusters as well as gigantic (twice as much) increase in density of the samples. As a result, in the cluster shells ferromagnetism is restored leading to the increase in magnetization of the sample and suppression of local superconductivity. For initial samples, the temperature dependence of resistivity ρ(T)~T{sup 2} is determined by the electron scattering on quantum defects. In strongly inhomogeneous samples, after irradiation by fluence Φ=1.5×10{sup 18} ions/cm{sup 2}, the transition to a dependence ρ(T)~T{sup 1/2} is caused by the effects of weak localization. In more homogeneous samples, at Φ=3×10{sup 18} ions/cm{sup 2}, a return to the dependence ρ(T)~T{sup 2} is observed. - Highlights: • The samples at high dose of ion irradiation become more homogeneous. • Gigantic increase in density of the samples (twice as much) is observed. • Ferromagnetism in large Fe–Cr clusters is restored. • Ferromagnetism of Fe–Cr clusters suppresses local superconductivity in them. • The participation of quantum defects in scattering of electrons is returned.

  6. MAGNET

    B. Curé

    2012-01-01

      The magnet and its sub-systems were stopped at the beginning of the winter shutdown on 8th December 2011. The magnet was left without cooling during the cryogenics maintenance until 17th January 2012, when the cryoplant operation resumed. The magnet temperature reached 93 K. The vacuum pumping was maintained during this period. During this shutdown, the yearly maintenance was performed on the cryogenics, the vacuum pumps, the magnet control and safety systems, and the power converter and discharge lines. Several preventive actions led to the replacement of the electrovalve command coils, and the 20A DC power supplies of the magnet control system. The filters were cleaned on the demineralised water circuits. The oil of the diffusion pumps was changed. On the cryogenics, warm nitrogen at 343 K was circulated in the cold box to regenerate the filters and the heat exchangers. The coalescing filters have been replaced at the inlet of both the turbines and the lubricant trapping unit. The active cha...

  7. MAGNET

    B. Curé

    2013-01-01

      The magnet was operated without any problem until the end of the LHC run in February 2013, apart from a CERN-wide power glitch on 10 January 2013 that affected the CMS refrigerator, causing a ramp down to 2 T in order to reconnect the coldbox. Another CERN-wide power glitch on 15 January 2013 didn’t affect the magnet subsystems, the cryoplant or the power converter. At the end of the magnet run, the reconnection of the coldbox at 2.5 T was tested. The process will be updated, in particular the parameters of some PID valve controllers. The helium flow of the current leads was reduced but only for a few seconds. The exercise will be repeated with the revised parameters to validate the automatic reconnection process of the coldbox. During LS1, the water-cooling services will be reduced and many interventions are planned on the electrical services. Therefore, the magnet cryogenics and subsystems will be stopped for several months, and the magnet cannot be kept cold. In order to avoid unc...

  8. MAGNET

    Benoit Curé

    2010-01-01

    The magnet was successfully operated at the end of the year 2009 despite some technical problems on the cryogenics. The magnet was ramped up to 3.8 T at the end of November until December 16th when the shutdown started. The magnet operation met a few unexpected stops. The field was reduced to 3.5 T for about 5 hours on December 3rd due to a faulty pressure sensor on the helium compressor. The following day the CERN CCC stopped unintentionally the power converters of the LHC and the experiments, triggering a ramp down that was stopped at 2.7 T. The magnet was back at 3.8 T about 6 hours after CCC sent the CERN-wide command. Three days later, a slow dump was triggered due to a stop of the pump feeding the power converter water-cooling circuit, during an intervention on the water-cooling plant done after several disturbances on the electrical distribution network. The magnet was back at 3.8 T in the evening the same day. On December 10th a break occurred in one turbine of the cold box producing the liquid ...

  9. MAGNET

    B. Curé

    2011-01-01

    The CMS magnet has been running steadily and smoothly since the summer, with no detected flaw. The magnet instrumentation is entirely operational and all the parameters are at their nominal values. Three power cuts on the electrical network affected the magnet run in the past five months, with no impact on the data-taking as the accelerator was also affected at the same time. On 22nd June, a thunderstorm caused a power glitch on the service electrical network. The primary water cooling at Point 5 was stopped. Despite a quick restart of the water cooling, the inlet temperature of the demineralised water on the busbar cooling circuit increased by 5 °C, up to 23.3 °C. It was kept below the threshold of 27 °C by switching off other cooling circuits to avoid the trigger of a slow dump of the magnet. The cold box of the cryogenics also stopped. Part of the spare liquid helium volume was used to maintain the cooling of the magnet at 4.5 K. The operators of the cryogenics quickly restarted ...

  10. Fabrication of a magnetic nanocomposite photocatalysts Fe3O4@ZIF-67 for degradation of dyes in water under visible light irradiation

    Guan, Weihua; Gao, Xuechuan; Ji, Guanfeng; Xing, Yongxing; Du, Chunfang; Liu, Zhiliang

    2017-11-01

    As organic dyes are a major group of water pollutants, the development of materials for the removal of dyes is of great significance for the environment. Here, a novel flower-like Fe3O4@ZIF-67 photocatalyst was synthesized using a simple method at room temperature. It was found that the Fe3O4@ZIF-67 exhibited the ability of degrading Congo red (CR) quickly under visible light irradiation in a short time after adsorption equilibrium. Free radical trapping experiments revealed that the photo-induced active species superoxide radical (•O2-) and holes (h+) were the predominant active species in the photocatalytic system. In addition, results demonstrated that the Fe3O4@ZIF-67 can be magnetically recycled, and maintain high photocatalytic activity after reuse over five cycles with no obvious decrease in the removal efficiency. It suggested that the synthesized material had a potentially promising application for CR removal from waste water.

  11. Effect of field size on determination of mean free path of a magnetized mortar irradiated with energy photons between 65 and 1250 keV

    Andrade, M. Paes de; Vieira, J.W.; Filho, Joao Antonio

    2011-01-01

    The size effect of the radiation field in determining the half value layer (HVL) and the relaxation length of a magnetized mortar was evaluated for photon beams of energy between 65 and 1250 keV. The mortar consists of water, cement, limonite and magnetite has been shaped and constructed a computer simulation of photon beam attenuation for different radiation fields with diameters between 3 and 20 cm using the Monte Carlo code Penelope. For the same energy and different sizes of the radiation field, the ratio of HVL and μx showed a deviation of up to 21% when the radiation beam was attenuated 99%. It was concluded that the experimental determination of the magnitudes of the HVL and μx for the mortar and the irradiation conditions used in this study were made with narrow radiation fields. (author)

  12. A New Experimental Approach to Improve the Quality of Low Grade Silica; The Combination of Indirect Ultrasound Irradiation with Reverse Flotation and Magnetic Separation

    Hamed Haghi

    2016-11-01

    Full Text Available Removal of iron impurities in silica is one of the most important issues in the glass industry. The most noted impurities are surface coating and staining on silica particles; additionally, some cases of inclusions are observed. The prepared silica sample, for this research work, mostly was in the size range of 106–425 µm. Mineralogical studies indicated the existence of goethite, hematite, limonite and pyrite as the major iron impurities. The poor liberation degree of silica particles from clays encouraged the use of ultrasound irradiation to improve the efficiency of reverse flotation. The head sample contained 96.98% SiO2, 0.143% Fe2O3, 1.52% Al2O3, and 0.088% TiO2; Fe2O3 had to be reduced to below 0.04%. The reverse flotation tests were carried out with and without indirect ultrasound irradiation. The lowest Fe2O3 grade of the flotation yield was 0.058% and this was achieved using 2000 g/t of C4 collector with 15 min conditioning at neutral pH. C4 consisted of Aero 801, Aero 825, oleic acid and sodium oleate at equal dosage. As a result, a flowsheet was developed to include indirect ultrasound irradiation with reverse flotation and two stages of dry high intensity magnetic separation. In conclusion, the best product contained 98.43% SiO2, 0.034% Fe2O3, 0.90% Al2O3 and 0.051% TiO2.

  13. Reducing loss in lateral charged-particle equilibrium due to air cavities present in x-ray irradiated media by using longitudinal magnetic fields

    Naqvi, Shahid A.; Li, X. Allen; Ramahi, Shada W.; Chu, James C.; Ye, Sung-Joon

    2001-01-01

    The underdosing of lesions distal to air cavities, such as those found in upper respiratory passages, occurs due to the loss in lateral charged-particle equilibrium (CPE). The degree of underdosing worsens for smaller field sizes, resulting in more frequent recurrence of the cancer treated. Higher photon energies further aggravate the outcome by producing longer second build-up regions beyond the cavity. Besides underdosing, the larger lateral spread of secondary electron fluence in the air cavity produces diffuse dose distributions at the tissue-air interface for shaped or intensity modulated fields. These disequilibrium effects create undesirable deviations from the intended treatment. The clinical concern is further intensified by the failure of traditional treatment planning systems to even account for such defects. In this work, the use of longitudinal magnetic fields on the order of 0.5 T is proposed for alleviating lateral electronic disequilibrium due to the presence of air cavities in the irradiated volume. The magnetic field enforces lateral CPE by restricting the lateral range of electrons in the air cavity. The problem is studied in a simple water-air-water slab geometry using EGS4 Monte Carlo simulations for 6 MV photons. Electronic disequilibrium is evaluated for beams of various sizes, shapes and intensity distributions constructed by linear superposition of the dose distributions for 0.5x0.5 cm 2 beamlets. Comparison is also made with 60 Co irradiation. The results indicate that the lateral confinement of secondary electrons in the air cavity by sub-MRI strength longitudinal fields is effective in reducing deterioration of dose distributions near tissue-air interfaces. This can potentially reduce recurrence rates of cancers such as the larynx carcinoma

  14. Enhanced photocatalytic activity and characterization of magnetic Ag/BiOI/ZnFe2O4 composites for Hg0 removal under fluorescent light irradiation

    Li, Chengwei; Zhang, Anchao; Zhang, Lixiang; Song, Jun; Su, Sheng; Sun, Zhijun; Xiang, Jun

    2018-03-01

    A series of magnetic Ag/BiOI/ZnFe2O4 hybrids synthesized via hydrothermal process, subsequent deposition-precipitation and photoreduction method were employed to remove elemental mercury (Hg0) under fluorescent light irradiation. The effects of Ag content, fluorescent light irradiation, reaction temperature, pH value, flue gas composition, anions and photocatalyst dosage on Hg0 removal were investigated in detail. The as-synthesized photocatalysts were characterized using N2 adsorption-desorption, XRD, SEM, TEM, HRTEM, XPS, VSM, DRS, ESR, PL and photocurrent response. The results showed that the ternary Ag/BiOI/ZnFe2O4 hybrids possessed enhanced visible-light-responsive photocatalytic performances for Hg0 removal. Ag/BiOI/ZnFe2O4 photocatalyst could be easily recovered from the reaction solution by an extra magnet and was stable in the process of Hg0 removal. Lower content of Ag was highly dispersed on the surface of BiOI/ZnFe2O4, while higher content of Ag would result in some aggregations and/or the blockages of micropore. In comparison to BiOI/ZnFe2O4, Ag deposited BiOI/ZnFe2O4 material showed lower recombination rate of electron-hole pairs. The superior Hg0 oxidation removal could correspond to good match of BiOI and ZnFe2O4, excellent fluidity and surface plasmon resonance effect of Ag0 nanoparticles, which led to higher separation efficiency of photogenerated electrons and holes, thereby enhancing the hybrids' photocatalytic activity.

  15. MAGNET

    B. Curé

    2011-01-01

    The magnet ran smoothly in the last few months until a fast dump occurred on 9th May 2011. Fortunately, this occurred in the afternoon of the first day of the technical stop. The fast dump was due to a valve position controller that caused the sudden closure of a valve. This valve is used to regulate the helium flow on one of the two current leads, which electrically connects the coil at 4.5 K to the busbars at room temperature. With no helium flow on the lead, the voltage drop and the temperatures across the leads increase up to the defined thresholds, triggering a fast dump through the Magnet Safety System (MSS). The automatic reaction triggered by the MSS worked properly. The helium release was limited as the pressure rise was just at the limit of the safety valve opening pressure. The average temperature of the magnet reached 72 K. It took four days to recover the temperature and refill the helium volumes. The faulty valve controller was replaced by a spare one before the magnet ramp-up resumed....

  16. Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

    Awan, Saif Ullah

    2014-10-28

    Memory and switching devices acquired new materials which exhibit ferroelectric and ferromagnetic order simultaneously. We reported multiferroic behavior in Zn1-yLiyO(0.00≤y≤0.10) nanoparticles. The analysis of transmission electron micrographs confirmed the hexagonal morphology and wurtzite crystalline structure. We investigated p-type conductivity in doped samples and measured hole carriers in range 2.4×1017/cc to 7.3×1017/cc for different Li contents. We found that hole carriers are responsible for long range order ferromagnetic coupling in Li doped samples. Room temperature ferroelectric hysteresis loops were observed in 8% and 10% Li doped samples. We demonstrated ferroelectric coercivity (remnant polarization) 2.5kV/cm (0.11 μC/cm2) and 2.8kV/cm (0.15 μC/cm2) for y=0.08 and y=0.10 samples. We propose that the mechanism of Li induced ferroelectricity in ZnO is due to indirect dipole interaction via hole carriers. We investigated that if the sample has hole carriers ≥5.3×1017/cc, they can mediate the ferroelectricity. Ferroelectric and ferromagnetic measurements showed that higher electric polarization and larger magnetic moment is attained when the hole concentration is larger and vice versa. Our results confirmed the hole dependent coexistence of ferromagnetic and ferroelectric behavior at room temperature, which provide potential applications for switchable and memory devices.

  17. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-01-01

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  18. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

    2017-04-15

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  19. Semiconducting p-type MgNiO:Li epitaxial films fabricated by cosputtering method

    Kwon, Yong Hun; Chun, Sung Hyun; Cho, Hyung Koun [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2013-07-15

    Li-doped ternary Mg{sub x}Ni{sub 1-x}O thin films were deposited on (0001) Al{sub 2}O{sub 3} substrates by a radio frequency (RF) magnetron cosputtering method with MgO and NiO:Li targets. The Mg mole fraction and Li content were relatively controlled by changing RF power for the MgO target over a range of 0-300 W, while the NiO:Li target was kept at 150 W. As a result, all films were epitaxially grown on (0001) Al{sub 2}O{sub 3} substrates with the relationship of [110]{sub NiO}||[1110]{sub Al2O3}, [112]{sub NiO}||[2110]{sub Al2O3} (in-plane), and [111]{sub NiO}||[0001]{sub Al2O3} (out-of-plane), and showed p-type semiconducting properties. Furthermore, from x-ray diffraction patterns, the authors found that MgO was effectively mixed with NiO:Li without structural deformation due to low lattice mismatch (0.8%) between NiO and MgO. However, the excess Li contents degraded the crystallinity of the MgNiO films. The band-gap of films was continuously shifted from 3.66 eV (339 nm) to 4.15 eV (299 nm) by the RF power of the MgO target. A visible transmittance of more than 80% was exhibited at RF powers higher than 200 W. Ultimately, the electrical resistivity of p-type MgNiO films was improved from 7.5 to 673.5 {Omega}cm, indicating that the Li-doped MgNiO films are good candidates for transparent p-type semiconductors.

  20. Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

    Aminorroaya Yamini, Sima; Wang, Heng; Gibbs, Zachary M.; Pei, Yanzhong; Mitchell, David R.G.; Dou, Shi Xue; Snyder, G. Jeffrey

    2014-01-01

    Graphical abstract: - Abstract: A long-standing technological challenge to the widespread application of thermoelectric generators is obtaining high-performance thermoelectric materials from abundant elements. Intensive study on PbTe alloys has resulted in a high figure of merit for the single-phase ternary PbTe–PbSe system through band structure engineering, and the low thermal conductivity achieved due to nanostructuring leads to high thermoelectric performance for ternary PbTe–PbS compounds. Recently, the single-phase p-type quaternary PbTe–PbSe–PbS alloys have been shown to provide thermoelectric performance superior to the binary and ternary lead chalcogenides. This occurs via tuning of the band structure and from an extraordinary low thermal conductivity resulting from high-contrast atomic mass solute atoms. Here, we present the thermoelectric efficiency of nanostructured p-type quaternary PbTe–PbSe–PbS composites and compare the results with corresponding single-phase quaternary lead chalcogenide alloys. We demonstrate that the very low lattice thermal conductivity achieved is attributed to phonon scattering at high-contrast atomic mass solute atoms rather than from the contribution of secondary phases. This results in a thermoelectric efficiency of ∼1.4 over a wide temperature range (650–850 K) in a p-type quaternary (PbTe) 0.65 (PbSe) 0.1 (PbS) 0.25 composite that is lower than that of single-phase (PbTe) 0.85 (PbSe) 0.1 (PbS) 0.05 alloy without secondary phases

  1. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

    Rafal Pietruszka

    2014-02-01

    Full Text Available Selected properties of photovoltaic (PV structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100 are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%.

  2. Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

    Hota, M. K.

    2014-04-14

    We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

  3. Transient expression of P-type ATPases in tobacco epidermal cells

    Pedas, Lisbeth Rosager; Palmgren, Michael Broberg; Lopez Marques, Rosa Laura

    2016-01-01

    Transient expression in tobacco cells is a convenient method for several purposes such as analysis of protein-protein interactions and the subcellular localization of plant proteins. A suspension of Agrobacterium tumefaciens cells carrying the plasmid of interest is injected into the intracellula...... for example protein-protein interaction studies. In this chapter, we describe the procedure to transiently express P-type ATPases in tobacco epidermal cells, with focus on subcellular localization of the protein complexes formed by P4-ATPases and their β-subunits....

  4. The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

    Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu

    2013-01-01

    Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions

  5. Initial results from 3D-DDTC detectors on p-type substrates

    Zoboli, A., E-mail: zoboli@disi.unitn.i [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38100 Povo di Trento (Italy); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy); Bosisio, L. [Dipartimento di Fisica, Universita di Trieste, and INFN, Sezione di Trieste, Via A. Valerio, 2, I-34127 Trieste (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38100 Povo di Trento (Italy); Piemonte, C.; Ronchin, S.; Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy)

    2010-01-11

    Owing to their superior radiation hardness compared to planar detectors, 3D detectors are one of the most promising technologies for the LHC upgrade foreseen in 2017. Fondazione Bruno Kessler has developed 3D Double-side Double-Type Column (3D-DDTC) detectors providing a technological simplifications with respect to a standard 3D process while aiming at comparable detector performance. We present selected results from the electrical characterization of 3D-DDTC structures from the second batch made on p-type substrates, supported also by TCAD simulations.

  6. Methods for enhancing P-type doping in III-V semiconductor films

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  7. Bulk and surface event identification in p-type germanium detectors

    Yang, L. T.; Li, H. B.; Wong, H. T.; Agartioglu, M.; Chen, J. H.; Jia, L. P.; Jiang, H.; Li, J.; Lin, F. K.; Lin, S. T.; Liu, S. K.; Ma, J. L.; Sevda, B.; Sharma, V.; Singh, L.; Singh, M. K.; Singh, M. K.; Soma, A. K.; Sonay, A.; Yang, S. W.; Wang, L.; Wang, Q.; Yue, Q.; Zhao, W.

    2018-04-01

    The p-type point-contact germanium detectors have been adopted for light dark matter WIMP searches and the studies of low energy neutrino physics. These detectors exhibit anomalous behavior to events located at the surface layer. The previous spectral shape method to identify these surface events from the bulk signals relies on spectral shape assumptions and the use of external calibration sources. We report an improved method in separating them by taking the ratios among different categories of in situ event samples as calibration sources. Data from CDEX-1 and TEXONO experiments are re-examined using the ratio method. Results are shown to be consistent with the spectral shape method.

  8. Effect of Current Density on Thermal and Optical Properties of p-Type Porous Silicon

    Kasra Behzad; Wan Mahmood Mat Yunus; Zainal Abidin Talib; Azmi Zakaria; Afarin Bahrami

    2011-01-01

    The different parameters of the porous silicon (PSi) can be tuned by changing some parameters in preparation process. We have chosen the anodization as formation method, so the related parameters should be changed. In this study the porous silicon (PSi) layers were formed on p-type Si wafer. The samples were anodized electrically in a fixed etching time under some different current densities. The structural and optical properties of porous silicon (PSi) on silicon (Si) substrates were investigated using photoluminescence (PL) and Photoacoustic Spectroscopy (PAS). (author)

  9. Double-layered NiO photocathodes for p-type DSSCs with record IPCE

    Li, Lin; Qin, Peng; Gorlov, Mikhail [Center of Molecular Devices School of Chemical Science and Engineering, Royal Institute of Technology (KTH), Stockholm (Sweden); Gibson, Elizabeth A.; Boschloo, Gerrit [Department of Physical and Analytical Chemistry, Uppsala University (Sweden); Hagfeldt, Anders [Center of Molecular Devices School of Chemical Science and Engineering, Royal Institute of Technology (KTH), Stockholm (Sweden); Department of Physical and Analytical Chemistry, Uppsala University (Sweden); DUT-KTH Joint Education and Research Center of Molecular Devices, State Key Laboratory of Fine Chemicals, Dalian University of Technology (DUT), Dalian (China); Sun, Licheng [Center of Molecular Devices School of Chemical Science and Engineering, Royal Institute of Technology (KTH), Stockholm (Sweden); DUT-KTH Joint Education and Research Center of Molecular Devices, State Key Laboratory of Fine Chemicals, Dalian University of Technology (DUT), Dalian (China)

    2010-04-18

    A way to achieve a high-efficiency dye-sensitized solar cell is to combine an n-type TiO{sub 2}-based photoanode with a p-type photocathode in a tandem configuration. The development of an efficient photocathode is, at present, the key target. We have optimized the NiO, I{sub 3}{sup -}/I{sup -} p-DSSC system to obtain record photocurrent, giving 64% incident photon-to-current conversion efficiency (IPCE) and 5.48 mAcm{sup -2} J{sub SC}. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Photocatalytic degradation of methylene blue on magnetically separable MgFe2O4 under visible light irradiation

    Shahid, Muhammad; Jingling, Liu; Ali, Zahid; Shakir, Imran; Warsi, Muhammad Farooq; Parveen, Riffat; Nadeem, Muhammad Tahir

    2013-01-01

    A magnetically separable single-phase MgFe2O4 photocatalyst with a spinel crystal structure was synthesized by using the solid-state reaction method. The formation of spinel structure is confirmed by X-ray diffraction and Fourier transform infrared

  11. Thermal oxidation of Ni films for p-type thin-film transistors

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  12. Fullerene C70 as a p-type donor in organic photovoltaic cells

    Zhuang, Taojun; Wang, Xiao-Feng; Sano, Takeshi; Kido, Junji; Hong, Ziruo; Li, Gang; Yang, Yang

    2014-01-01

    Fullerenes and their derivatives have been widely used as n-type materials in organic transistor and photovoltaic devices. Though it is believed that they shall be ambipolar in nature, there have been few direct experimental proofs for that. In this work, fullerene C 70 , known as an efficient acceptor, has been employed as a p-type electron donor in conjunction with 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile as an electron acceptor in planar-heterojunction (PHJ) organic photovoltaic (OPV) cells. High fill factors (FFs) of more than 0.70 were reliably achieved with the C 70 layer even up to 100 nm thick in PHJ cells, suggesting the superior potential of fullerene C 70 as the p-type donor in comparison to other conventional donor materials. The optimal efficiency of these unconventional PHJ cells was 2.83% with a short-circuit current of 5.33 mA/cm 2 , an open circuit voltage of 0.72 V, and a FF of 0.74. The results in this work unveil the potential of fullerene materials as donors in OPV devices, and provide alternative approaches towards future OPV applications.

  13. Electronic structure and p-type doping of ZnSnN2

    Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

    ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

  14. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

  15. Valence band states in Si-based p-type delta-doped field effect transistors

    Martinez-Orozco, J C; Vlaev, Stoyan J

    2009-01-01

    We present tight-binding calculations of the hole level structure of δ-doped Field Effect Transistor in a Si matrix within the first neighbors sp 3 s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type δ-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p 2d ) of the p-type δ-doped well and the contact voltage (V c ). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  16. Wide band gap p-type windows by CBD and SILAR methods

    Sankapal, B.R.; Goncalves, E.; Ennaoui, A.; Lux-Steiner, M.Ch.

    2004-01-01

    Chemical deposition methods, namely, chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) have been used to deposit wide band gap p-type CuI and CuSCN thin films at room temperature (25 deg. C) in aqueous medium. Growth of these films requires the use of Cu (I) cations as a copper ions source. This is achieved by complexing Cu (II) ions using Na 2 S 2 O 3 . The anion sources are either KI as iodine or KSCN as thiocyanide ions for CuI and CuSCN films, respectively. The preparative parameters are optimized with the aim to use these p-type materials as windows for solar cells. Different substrates are used, namely: glass, fluorine doped tin oxide coated glass and CuInS 2 (CIS). X-ray diffraction, scanning electron microscopy, atomic force microscopy and optical absorption spectroscopy are used for structural, surface morphological and optical studies, and the results are discussed

  17. Effect of compressive stress on stability of N-doped p-type ZnO

    Chen Xingyou [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang Zhenzhong; Jiang Mingming; Wang Shuangpeng; Li Binghui; Shan Chongxin; Liu Lei; Zhao Dongxu; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun 130033 (China); Yao Bin [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China)

    2011-08-29

    Nitrogen-doped p-type zinc oxide (p-ZnO:N) thin films were fabricated on a-/c-plane sapphire (a-/c-Al{sub 2}O{sub 3}) by plasma-assisted molecular beam epitaxy. Hall-effect measurements show that the p-type ZnO:N on c-Al{sub 2}O{sub 3} degenerated into n-type after a preservation time; however, the one grown on a-Al{sub 2}O{sub 3} showed good stability. The conversion of conductivity in the one grown on c-Al{sub 2}O{sub 3} ascribed to the faster disappearance of N{sub O} and the growing N{sub 2(O)}, which is demonstrated by x-ray photoelectron spectroscopy (XPS). Compressive stress, caused by lattice misfit, was revealed by Raman spectra and optical absorption spectra, and it was regarded as the root of the instability in ZnO:N.

  18. Wide band gap p-type windows by CBD and SILAR methods

    Sankapal, B.R.; Goncalves, E.; Ennaoui, A.; Lux-Steiner, M.Ch

    2004-03-22

    Chemical deposition methods, namely, chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) have been used to deposit wide band gap p-type CuI and CuSCN thin films at room temperature (25 deg. C) in aqueous medium. Growth of these films requires the use of Cu (I) cations as a copper ions source. This is achieved by complexing Cu (II) ions using Na{sub 2}S{sub 2}O{sub 3}. The anion sources are either KI as iodine or KSCN as thiocyanide ions for CuI and CuSCN films, respectively. The preparative parameters are optimized with the aim to use these p-type materials as windows for solar cells. Different substrates are used, namely: glass, fluorine doped tin oxide coated glass and CuInS{sub 2} (CIS). X-ray diffraction, scanning electron microscopy, atomic force microscopy and optical absorption spectroscopy are used for structural, surface morphological and optical studies, and the results are discussed.

  19. Homogeneous Gaussian Profile P+-Type Emitters: Updated Parameters and Metal-Grid Optimization

    M. Cid

    2002-10-01

    Full Text Available P+-type emitters were optimized keeping the base parameters constant. Updated internal parameters were considered. The surface recombination velocity was considered variable with the surface doping level. Passivated homogeneous emitters were found to have low emitter recombination density and high collection efficiency. A complete structure p+nn+ was analyzed, taking into account optimized shadowing and metal-contacted factors for laboratory cells as function of the surface doping level and the emitter thickness. The base parameters were kept constant to make the emitter characteristics evident. The most efficient P+-type passivated homogeneous emitters, provide efficiencies around 21% for a wide range of emitter sheet resistivity (50 -- 500 omega/ with the surface doping levels Ns=1×10(19 cm-3 and 5×10(19 cm-3. The output electrical parameters were evaluated considering the recently proposed value n i=9.65×10(9 (cm-3. A non-significant increase of 0.1% in the efficiency was obtained, validating all the conclusions obtained in this work, considering n i=1×10(10 cm-3.

  20. Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

    Li Shang-Sheng; Li Xiao-Lei; Su Tai-Chao; Jia Xiao-Peng; Ma Hong-An; Huang Guo-Feng; Li Yong

    2011-01-01

    High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond. (cross-disciplinary physics and related areas of science and technology)

  1. Easily doped p-type, low hole effective mass, transparent oxides

    Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

    2016-02-01

    Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications - i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe.

  2. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    Goyal Prabal

    2016-01-01

    Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  3. Valence band states in Si-based p-type delta-doped field effect transistors

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  4. MAGNET

    Benoit Curé

    2010-01-01

    The magnet worked very well at 3.8 T as expected, despite a technical issue that manifested twice in the cryogenics since June. All the other magnet sub-systems worked without flaw. The issue in the cryogenics was with the cold box: it could be observed that the cold box was getting progressively blocked, due to some residual humidity and air accumulating in the first thermal exchanger and in the adsorber at 65 K. This was later confirmed by the analysis during the regeneration phases. An increase in the temperature difference between the helium inlet and outlet across the heat exchanger and a pressure drop increase on the filter of the adsorber were observed. The consequence was a reduction of the helium flow, first compensated by the automatic opening of the regulation valves. But once they were fully opened, the flow and refrigeration power reduced as a consequence. In such a situation, the liquid helium level in the helium Dewar decreased, eventually causing a ramp down of the magnet current and a field...

  5. MAGNET

    B. Curé

    MAGNET During the winter shutdown, the magnet subsystems went through a full maintenance. The magnet was successfully warmed up to room temperature beginning of December 2008. The vacuum was broken later on by injecting nitrogen at a pressure just above one atmosphere inside the vacuum tank. This was necessary both to prevent any accidental humidity ingress, and to allow for a modification of the vacuum gauges on the vacuum tank and maintenance of the diffusion pumps. The vacuum gauges had to be changed, because of erratic variations on the measurements, causing spurious alarms. The new type of vacuum gauges has been used in similar conditions on the other LHC experiments and without problems. They are shielded against the stray field. The lubricants of the primary and diffusion pumps have been changed. Several minor modifications were also carried out on the equipment in the service cavern, with the aim to ease the maintenance and to allow possible intervention during operation. Spare sensors have been bough...

  6. MAGNET

    Benoit Curé.

    The magnet operation restarted end of June this year. Quick routine checks of the magnet sub-systems were performed at low current before starting the ramps up to higher field. It appeared clearly that the end of the field ramp down to zero was too long to be compatible with the detector commissioning and operations plans. It was decided to perform an upgrade to keep the ramp down from 3.8T to zero within 4 hours. On July 10th, when a field of 1.5T was reached, small movements were observed in the forward region support table and it was decided to fix this problem before going to higher field. At the end of July the ramps could be resumed. On July 28th, the field was at 3.8T and the summer CRAFT exercise could start. This run in August went smoothly until a general CERN wide power cut took place on August 3rd, due to an insulation fault on the high voltage network outside point 5. It affected the magnet powering electrical circuit, as it caused the opening of the main circuit breakers, resulting in a fast du...

  7. MAGNET

    B. Curé

    2013-01-01

    The magnet is fully stopped and at room temperature. The maintenance works and consolidation activities on the magnet sub-systems are progressing. To consolidate the cryogenic installation, two redundant helium compressors will be installed as ‘hot spares’, to avoid the risk of a magnet downtime in case of a major failure of a compressor unit during operation. The screw compressors, their motors, the mechanical couplings and the concrete blocks are already available and stored at P5. The metallic structure used to access the existing compressors in SH5 will be modified to allow the installation of the two redundant ones. The plan is to finish the installation and commissioning of the hot spare compressors before the summer 2014. In the meantime, a bypass on the high-pressure helium piping will be installed for the connection of a helium drier unit later during the Long Shutdown 1, keeping this installation out of the schedule critical path. A proposal is now being prepared for the con...

  8. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

    Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

    2014-11-25

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

  9. DFT plus U studies of Cu doping and p-type compensation in crystalline and amorphous ZnS

    Pham, Hieu H.; Barkema, Gerard T.|info:eu-repo/dai/nl/101275080; Wang, Lin-Wang

    2015-01-01

    Zinc sulfide is an excellent candidate for the development of a p-type transparent conducting material that has great demands in solar energy and optoelectronic applications. Doping with Cu is one potential way to make ZnS p-type while preserving its optical transparency for the solar spectrum;

  10. Long-term cerebral metabolite changes on proton magnetic resonance spectroscopy in patients cured of acute lymphoblastic leukemia with previous intrathecal methotrexate and cranial irradiation prophylaxis

    Chan Yuleung; Roebuck, Derek J.; Yuen Manpan; Yeung Kawai; Lau Kamying; Li Chikong; Chik Kiwai

    2001-01-01

    Purpose: To evaluate the long-term brain metabolite changes on 1 H-MRS in acute lymphoblastic leukemia (ALL) patients who had intrathecal methotrexate (ITMTX) and cranial irradiation (CRT) for central nervous system (CNS) prophylaxis against CNS relapse. Methods and Materials: Thirty-seven ALL patients (12 females, 25 males) with history of ITMTX and CRT for CNS prophylaxis were studied. Age ranges at the time of diagnosis and at magnetic resonance examination were 0.8-13 years and 12-27 years, respectively. The interval since diagnosis was 5.6-19 years. T2-weighted and gradient-recalled echo (GRE) magnetic resonance imaging (MRI) and proton magnetic resonance spectroscopy ( 1 H-MRS) were performed to assess brain injury. Results: On MRI, 3 leukoencephalopathy (LEP) and 1 infarct were detected. Twenty-two patients had evidence of hemosiderin. On 1 H-MRS no statistically significant difference in choline (Cho)/creatine (Cr) and N-acetylaspartate (NAA)/Cr was associated with LEP. A lower Cho/Cr (p=0.006) and NAA/Cr (p=0.078) was observed in brains with hemosiderin. Linear-regression analysis showed no statistically significant relationship between NAA/Cr or Cho/Cr with age at diagnosis, but there was a statistically significant decreasing trend of NAA/Cr and Cho/Cr with the interval since diagnosis. Conclusion: Long-term brain injury in ALL survivors after CNS prophylaxis with ITMTX and CRT was reflected by decreasing NAA/Cr and Cho/Cr with the interval since diagnosis. The lower Cho/Cr associated with hemosiderin but not LEP suggested a different pathophysiology for these brain lesions

  11. Hierarchical Fe_3O_4@MoS_2/Ag_3PO_4 magnetic nanocomposites: Enhanced and stable photocatalytic performance for water purification under visible light irradiation

    Guo, Na; Li, Haiyan; Xu, Xingjian; Yu, Hongwen

    2016-01-01

    Highlights: • The FM/A-6% possesses a large specific surface area: 76.56 m"2/g. • The FM/A-6% displays high photocatalytic stability. • The FM/A-6% can be collected easily from the water by magnetic field. - Abstract: Novel hierarchical Fe_3O_4@MoS_2/Ag_3PO_4 magnetic nanophotocatalyst with remarkable photocatalytic capability were prepared by simply depositing the Ag_3PO_4 onto the surface of crumpled Fe_3O_4@MoS_2 nanosphere. The nanocomposites were characterized by XRD, TEM, HRTEM, XPS, BET, and UV–vis DRS. The outcome of the photocatalytic experiments demonstrated that Fe_3O_4@MoS_2/Ag_3PO_4 with 6 wt% content of Ag_3PO_4 (FM/A-6%) showed the highest photocatalytic activity upon the degradation Congo red (CR) and Rhodamine B (RhB) under both visible light and simulated sunlight irradiation. In addition, FM/A-6% possessed larger specific surface area (76.56 m"2/g) and excellent optical property. The possible Z-scheme charge carriers transfer mechanism for the enhanced photocatalytic properties of the FM/A-6% was also discussed. The Z-scheme charge carriers transfer mechanism established between MoS_2 and Ag_3PO_4 facilitate the charge separation efficiency. Moreover, FM/A-6% can be separated and collected easily by external magnetic field and maintain high activity after five times photoreaction cycles. Given the remarkable photocatalytic performance and high stability of FM/A-6% nanocomposite, it is looking forward to exhibit great potential for applications in water purification.

  12. SU-F-T-432: Magnetic Field Dose Effects for Various Radiation Beam Geometries for Patients Treated with Hypofractionated Partial Breast Irradiation

    Lim-Reinders, S [Sunnybrook Odette Cancer Centre, Toronto (Canada); University of Toronto, Department of Physics (Canada); Keller, B; McCann, C; Sahgal, A; Lee, J; Kim, A [Sunnybrook Odette Cancer Centre, Toronto (Canada); University of Toronto, Department of Radiation Oncology (Canada)

    2016-06-15

    Purpose: Hypofractionated partial breast irradiation (HPBI) is being used at our clinic to treat inoperable breast cancer patients who have advanced disease. We are investigating how these patients could benefit from being treated in an MRI-linac, where real-time daily MRI tumor imaging and plan adaptation would be possible. As a first step, this study evaluates the dosimetric impact of the magnetic field for different radiation beam geometries on relevant OARs. Methods: Five patients previously treated using HPBI were selected. Six treatment plans were generated for each patient, evaluating three beam geometries (VMAT, IMRT, 3DCRT) with and without B{sub 0}=1.5 T. The Monaco TPS was used with the Elekta MRI-Linac beam model, where the magnetic field is orthogonal to the radiation beam. All plans were re-scaled to the same isocoverage with a prescription of 40Gy/5 to the PTV. Plans were evaluated for the effect of the magnetic field and beam modality on skin V{sub 3} {sub 0}, lung V{sub 2} {sub 0} and mean heart dose. Results: Averaged over all patients, skin V{sub 3} {sub 0}for 3DCRT was higher than VMAT and IMRT (by +22% and +21%, with B{sub 0}-ON). The magnetic field caused larger increases in skin V{sub 3} {sub 0}for 3DCRT (+8%) than VMAT (+3%) and IMRT (+4%) compared with B{sub 0}-OFF. With B{sub 0}-ON, 3DCRT had a markedly lower mean heart dose than VMAT (by 538cGy) and IMRT (by 562cGy); for lung V{sub 2} {sub 0}, 3DCRT had a marginally lower dose than VMAT (by −2.2%) and IMRT (also −2.2%). The magnetic field had minimal effect on the mean heart dose and lung V{sub 2} {sub 0} for all geometries. Conclusion: The decreased skin dose in VMAT and IMRT can potentially mitigate the effects of skin reactions for HPBI in an MRI-linac. This study illustrated that more beam angles may result in lower skin toxicity and better tumor conformality, with the trade-off of elevated heart and lung doses. We are receiving funding support from Elekta.

  13. Investigation of the magnetic aftereffect in dilute Fe-Ni alloys after low-temperature neutron irradiation

    Blythe, H.J.; Walz, F.; Kronmueller, H.

    1982-01-01

    Dilute Fe alloys containing up to 0.5 at% Ni, neutron-irradiated at 77 K, exhibit a very complicated relaxation spectrum during anneal in the temperature range 30 to 350 K. This behaviour, in which individual peaks transform from one into another, is investigated in detail. All maxima occurring in the temperature range 30 to 140 K are found to be of Debye-type with relaxation times obeying an Arrhenius equation tau = tau 0 exp (Q/kT). The major processes of these spectra are computer-analysed in order to determine their activation parameters Q and tau 0 . The complicated peak genealogy, as observed on anneal, is attributed to the presence of two configurations of reorientating Fe interstitial atoms which form small clusters together with substitutionally and interstitially dissolved Ni atoms. (author)

  14. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    Fan, J. C.; Zhu, C. Y.; Fung, S.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Skorupa, W.; Anwand, W.

    2009-01-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400 deg. C, the films changed from n type to p type. Hole concentration and mobility of ∼6x10 17 cm -3 and ∼6 cm 2 V -1 s -1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn -2V Zn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  15. Highly conductive p-type amorphous oxides from low-temperature solution processing

    Li Jinwang; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

    2012-01-01

    We report solution-processed, highly conductive (resistivity 1.3-3.8 mΩ cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 °C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E VBM = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

  16. Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon

    Huang, Y.L.; Ma, Y.; Job, R.; Ulyashin, A.G.

    2004-01-01

    In plasma-hydrogenated p-type Czochralski silicon, rapid thermal donor (TD) formation is achieved, resulting from the catalytic support of hydrogen. The n-type counter doping by TD leads to a p-n junction formation. A simple method for the indirect determination of the diffusivity of hydrogen via applying the spreading resistance probe measurements is presented. Hydrogen diffusion in silicon during both plasma hydrogenation and post-hydrogenation annealing is investigated. The impact of the hydrogenation duration, annealing temperature, and resistivity of the silicon wafers on the hydrogen diffusion is discussed. Diffusivities of hydrogen are determined in the temperature range 270-450 deg. C. The activation energy for the hydrogen diffusion is deduced to be 1.23 eV. The diffusion of hydrogen is interpreted within the framework of a trap-limited diffusion mechanism. Oxygen and hydrogen are found to be the main traps

  17. Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

    Hota, Mrinal Kanti

    2015-02-23

    Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.

  18. Ge-intercalated graphene: The origin of the p-type to n-type transition

    Kaloni, Thaneshwor P.

    2012-09-01

    Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

  19. Ultrafast carrier dynamics in a p-type GaN wafer under different carrier distributions

    Fang, Yu; Yang, Junyi; Yang, Yong; Wu, Xingzhi; Xiao, Zhengguo; Zhou, Feng; Song, Yinglin

    2016-02-01

    The dependence of the carrier distribution on photoexcited carrier dynamics in a p-type Mg-doped GaN (GaN:Mg) wafer were systematically measured by femtosecond transient absorption (TA) spectroscopy. The homogeneity of the carrier distribution was modified by tuning the wavelength of the UV pulse excitation around the band gap of GaN:Mg. The TA kinetics appeared to be biexponential for all carrier distributions, and only the slower component decayed faster as the inhomogeneity of the carrier distribution increased. It was concluded that the faster component (50-70 ps) corresponded to the trap process of holes by the Mg acceptors, and the slower component (150-600 ps) corresponded to the combination of non-radiative surface recombination and intrinsic carrier recombination via dislocations. Moreover, the slower component increased gradually with the incident fluence due to the saturation of surface states.

  20. Thermodynamic analysis of Mg-doped p-type GaN semiconductor

    Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

    2006-01-01

    A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

  1. Investigation on the structural characterization of pulsed p-type porous silicon

    Wahab, N. H. Abd; Rahim, A. F. Abd; Mahmood, A.; Yusof, Y.

    2017-08-01

    P-type Porous silicon (PS) was sucessfully formed by using an electrochemical pulse etching (PC) and conventional direct current (DC) etching techniques. The PS was etched in the Hydrofluoric (HF) based solution at a current density of J = 10 mA/cm2 for 30 minutes from a crystalline silicon wafer with (100) orientation. For the PC process, the current was supplied through a pulse generator with 14 ms cycle time (T) with 10 ms on time (Ton) and pause time (Toff) of 4 ms respectively. FESEM, EDX, AFM, and XRD have been used to characterize the morphological properties of the PS. FESEM images showed that pulse PS (PPC) sample produces more uniform circular structures with estimated average pore sizes of 42.14 nm compared to DC porous (PDC) sample with estimated average size of 16.37nm respectively. The EDX spectrum for both samples showed higher Si content with minimal presence of oxide.

  2. Computation On dP Type power System Stabilizer Using Fuzzy Logic

    Iskandar, M.A.; Irwan, R.; Husdi; Riza; Mardhana, E.; Triputranto, A.

    1997-01-01

    Power system stabilizers (PSS) are widely applied in power generators to damp power oscillation caused by certain disturbances in order to increase the power supply capacity. PSS design is often suffered from the difficulty on setting periodically its parameters, which are gain and compensators, in order to have an optimal damping characteristic. This paper proposes a methode to determine parameters of dP type PSS by implementing fuzzy logic rules in a computer program,to obtain the appropriate characteristics of synchronous torque and damping torque. PSS with the calculated parameters is investigated on a simulation using a non-linear electric power system of a thermal generator connected to infinite bus system model. Simulation results show that great improvement in damping characteristic and enhancement of stability margin of electric power system are obtained by using the proposed PSS

  3. A low-energy ion source for p-type doping in MBE

    Park, R.M.; Stanley, C.R.; Clampitt, R.

    1980-01-01

    A compact low-energy ion cell has been developed for use as a source of acceptor impurities for the growth of p-type semiconductor material in ultra-high vacuum by molecular beam epitaxy. A flux of either zinc or cadmium atoms is emitted under molecular effusion conditions and partially ionised in the orifice of the cell by electron bombardment. The design provides for control of both the ion energy and current at constant cell temperature. (100)InP has been grown by MBE in a flux of 1 keV Zn ions. The surface morphology and crystal structure show no degradation when compared with (100)InP grown without the Zn ions present. (author)

  4. Producing p-type conductivity in self-compensating semiconductor material

    Vechten, J.A. van; Woodall, J.M.

    1981-01-01

    This relates to compound type semiconductor materials that exhibit self-compensated n-type conductivity. The process described imparts p-type conductivity to a body of normally n-conductivity self-compensated compound semiconductor material by bombarding it with charged particles, either electrons, protons or ions. Other possible steps include introducing an acceptor impurity and applying a coating onto the crystal body. This technique will allow new semiconductor structures to be made. For example, there are some compound semiconductor materials that exhibit n-conductivity only that have energy gap widths that would permit electrical to light conversion at frequency and colours not readily achieved in semiconductor devices. (U.K.)

  5. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.

    2009-10-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ˜400 °C, the films changed from n type to p type. Hole concentration and mobility of ˜6×1017 cm-3 and ˜6 cm2 V-1 s-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the AsZn-2VZn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  6. Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

    Cao, Xuan; Cao, Yu; Zhou, Chongwu

    2016-01-26

    Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

  7. Determination of the refractive index of n+- and p-type porous Si samples

    Setzu, S.; Romestain, R.; Chamard, V.

    2004-01-01

    Photochemical etching of porous Si layers has been shown to be able to create micrometer or submicrometer-scale lateral gratings very promising for photonic applications. However, the reduced size of this lateral periodicity hinders standard measurements of refractive index variations. Therefore accurate characterizations of such gratings are usually difficult. In this paper we address this problem by reproducing on a larger scale (millimeter) the micrometer scale light-induced refractive index variations associated to the lateral periodicity. Using this procedure we perform standard X-ray and optical reflectivity measurements on our samples. One can then proceed to the determination of light-induced variations of porosity and refractive index. We present results for p-type samples, where the photo-dissolution can only be realized after the formation of the porous layer, as well as for n + -type samples, where light action can only be effective during the formation of the porous layer

  8. Membrane Anchoring and Ion-Entry Dynamics in P-type ATPase Copper Transport

    Grønberg, Christina; Sitsel, Oleg; Lindahl, Erik

    2016-01-01

    Cu(+)-specific P-type ATPase membrane protein transporters regulate cellular copper levels. The lack of crystal structures in Cu(+)-binding states has limited our understanding of how ion entry and binding are achieved. Here, we characterize the molecular basis of Cu(+) entry using molecular-dynamics...... simulations, structural modeling, and in vitro and in vivo functional assays. Protein structural rearrangements resulting in the exposure of positive charges to bulk solvent rather than to lipid phosphates indicate a direct molecular role of the putative docking platform in Cu(+) delivery. Mutational analyses...... and simulations in the presence and absence of Cu(+) predict that the ion-entry path involves two ion-binding sites: one transient Met148-Cys382 site and one intramembranous site formed by trigonal coordination to Cys384, Asn689, and Met717. The results reconcile earlier biochemical and x-ray absorption data...

  9. Novel method of separating macroporous arrays from p-type silicon substrate

    Peng Bobo; Wang Fei; Liu Tao; Yang Zhenya; Wang Lianwei; Fu, Ricky K. Y.; Chu, Paul K.

    2012-01-01

    This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed. (semiconductor materials)

  10. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    Beaty, J.S.; Rolfe, J.L.; Vandersande, J.; Fleurial. J.P.

    1992-01-01

    This paper reports that a theoretical model has been developed that predicts that the addition of ultra-fine, inert, phonon-scattering centers to SiGe thermoelectric material will reduce its thermal conductivity and improve its figure-of-merit. To investigate this prediction, ultra-fine particulates (20 Angstrom to 200 Angstrom) of boron nitride have been added to boron doped, p-type, 80/20 SiGe. All previous SiGe samples produced from ultra-fine SiGe powder without additions had lower thermal conductivities than standard SiGe, but high temperature (1525 K) heat treatment increased their thermal conductivity back to the value for standard SiGe. Transmission Electron Microscopy has been used to confirm the presence of occluded particulates and X-ray diffraction has been used to determine the composition to be BN

  11. P-type CuxS thin films: Integration in a thin film transistor structure

    Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

    2013-01-01

    Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

  12. MAGNET

    Benoit Curé

    The magnet subsystems resumed operation early this spring. The vacuum pumping was restarted mid March, and the cryogenic power plant was restarted on March 30th. Three and a half weeks later, the magnet was at 4.5 K. The vacuum pumping system is performing well. One of the newly installed vacuum gauges had to be replaced at the end of the cool-down phase, as the values indicated were not coherent with the other pressure measurements. The correction had to be implemented quickly to be sure no helium leak could be at the origin of this anomaly. The pressure measurements have been stable and coherent since the change. The cryogenics worked well, and the cool-down went quite smoothly, without any particular difficulty. The automated start of the turbines had to be fine-tuned to get a smooth transition, as it was observed that the cooling power delivered by the turbines was slightly higher than needed, causing the cold box to stop automatically. This had no consequence as the cold box safety system acts to keep ...

  13. MAGNET

    B. Curé

    During the winter shutdown, the magnet subsystems went through a full maintenance. The magnet was successfully warmed up to room temperature beginning of December 2008. The vacuum was broken later on by injecting nitrogen at a pressure just above one atmosphere inside the vacuum tank. This was necessary both to prevent any accidental humidity ingress, and to allow for a modification of the vacuum gauges on the vacuum tank and maintenance of the diffusion pumps. The vacuum gauges had to be changed, because of erratic variations on the measurements, causing spurious alarms. The new type of vacuum gauges has been used in similar conditions on the other LHC experiments and without problems. They are shielded against the stray field. The lubricants of the primary and diffusion pumps have been changed. Several minor modifications were also carried out on the equipment in the service cavern, with the aim to ease the maintenance and to allow possible intervention during operation. Spare sensors have been bought. Th...

  14. Industrial irradiation

    Stirling, Andrew

    1995-01-01

    Production lines for rubber gloves would not appear to have much in common with particle physics laboratories, but they both use accelerators. Electron beam irradiation is often used in industry to improve the quality of manufactured goods or to reduce production cost. Products range from computer disks, shrink packaging, tyres, cables, and plastics to hot water pipes. Some products, such as medical goods, cosmetics and certain foodstuffs, are sterilized in this way. In electron beam irradiation, electrons penetrate materials creating showers of low energy electrons. After many collisions these electrons have the correct energy to create chemically active sites. They may either break molecular bonds or activate a site which promotes a new chemical linkage. This industrial irradiation can be exploited in three ways: breaking down a biological molecule usually renders it useless and kills the organism; breaking an organic molecule can change its toxicity or function; and crosslinking a polymer can strengthen it. In addition to traditional gamma irradiation using isotopes, industrial irradiation uses three accelerator configurations, each type defining an energy range, and consequently the electron penetration depth. For energies up to 750 kV, the accelerator consists of a DC potential applied to a simple wire anode and the electrons extracted through a slot in a coaxially mounted cylindrical cathode. In the 1-5 MeV range, the Cockcroft-Walton or Dynamitron( R ) accelerators are normally used. To achieve the high potentials in these DC accelerators, insulating SF6 gas and large dimension vessels separate the anode and cathode; proprietary techniques distinguish the various commercial models available. Above 5 MeV, the size of DC accelerators render them impractical, and more compact radiofrequency-driven linear accelerators are used. Irradiation electron beams are actually 'sprayed' over the product using a magnetic deflection system. Lower energy beams of

  15. High-aspect ratio microstructures in p-type GaAs and InP created by proton beam writing

    Menzel, F.; Spemann, D.; Butz, T.

    2011-01-01

    With proton beam writing (PBW) and subsequent electrochemical etching in HF-solution the creation of high-aspect ratio microstructures in p-type InP was performed for the first time. Microstructures with high surface quality as well as high-aspect ratio possessing lateral dimensions down to 1 μm were produced. Furthermore, free-standing microstructures were created in this material by a combined irradiation with 2.25 MeV protons and 1.125 MeV H 2 + molecules, were the smallest structure dimension of 0.6 μm was achieved for a horizontal needle. The creation of nearly perfect circular microstructures indicates that the crystal structure has little effect on the structuring process by PBW in this material. Moreover, the effect of reduced etching inside of closed irradiation patterns, already known from Si and GaAs, was observed also in InP. In further PBW experiments and subsequent electrochemical etching with KOH-solution p-type GaAs microstructures were produced. By using a 4-fold higher etch current density of 45 mA/cm 2 compared to former PBW experiments on this material the quality of the microstructures could be improved significantly leading to high aspect-ratio structures with minimum lateral sizes of ∼1 μm, nearly vertical side walls as well as circular microstructures. This shows the reduced influence of the crystal structure on the shape of the microstructures compared to experiments with lower etch current density where only flat microstructures with inclined side walls determined by the crystal structure could be created.

  16. Effect of 120 MeV 28Si9+ ion irradiation on structural and magnetic properties of NiFe2O4 and Ni0.5Zn0.5Fe2O4

    Sharma, R.; Raghuvanshi, S.; Satalkar, M.; Kane, S. N.; Tatarchuk, T. R.; Mazaleyrat, F.

    2018-05-01

    NiFe2O4, Ni0.5Zn0.5Fe2O4 samples were synthesized using sol-gel auto combustion method, and irradiated by using 120 MeV 28Si9+ ion with ion fluence of 1×1012 ions/cm2. Characterization of pristine, irradiated samples were done using X-Ray Diffraction (XRD), Field Emission Scanning Microscopy (FE-SEM), Energy Dispersive X-ray Analysis (EDAX) and Vibrating Sample Magnetometer (VSM). XRD validates the single phase nature of pristine, irradiated Ni- Zn nano ferrite except for Ni ferrite (pristine, irradiated) where secondary phases of α-Fe2O3 and Ni is observed. FE- SEM images of pristine Ni, Ni-Zn ferrite show inhomogeneous nano-range particle size distribution. Presence of diamagnetic ion (Zn2+) in NiFe2O4 increases oxygen positional parameter (u 4¯3m ), experimental, theoretical saturation magnetization (Msexp., Msth.), while decreases the grain size (Ds) and coercivity (Hc). With irradiation Msexp., Msth. increases but not much change are observed in Hc. New antistructure modeling for the pristine, irradiated Ni and Ni-Zn ferrite samples was used for describing the surface active centers.

  17. Defect studies in copper-based p-type transparent conducting oxides

    Ameena, Fnu

    Among other intrinsic open-volume defects, copper vacancy (VCu) has been theoretically identified as the major acceptor in p-type Cu-based semiconducting transparent oxides, which has potential as low-cost photovoltaic absorbers in semi-transparent solar cells. A series of positron annihilation experiments with pure Cu, Cu2O, and CuO presented strong presence of VCu and its complexes in the copper oxides. The lifetime data also showed that the density of VCu was becoming higher as the oxidation state of Cu increased which was consistent with the decrease in the formation energy of VCu. Doppler broadening measurements further indicated that electrons with low momentum made more contribution to the contributed as pure Cu oxidizes to copper oxides. The metastable defects are known to be generated in Cu2O upon illumination and it has been known to affect the performance of Cu2O-based hetero-junctions used in solar cells. The metastable effect was studied using positron annihilation lifetime spectroscopy and its data showed the change in the defect population upon light exposure and the minimal effect of light-induced electron density increase in the bulk of materials to the average lifetime of the positrons. The change in the defect population is concluded to be related to the dissociation and association of VCu -- V Cu complexes. For example, the shorter lifetime under light was ascribed to the annihilation with smaller size vacancies, which explains the dissociation of the complexes with light illumination. Doppler broadening of the annihilation was independent of light illumination, which suggested that the chemical nature of the defects remained without change upon their dissociation and association -- only the size distribution of copper vacancies varied. The delafossite metal oxides, CuMIIIO2 are emerging wide-bandgap p-type semiconductors. In this research, the formation energies of structural vacancies are calculated using Van Vechten cavity model as an attempt

  18. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    Nam, Sungho; Han, Hyemi; Seo, Jooyeok; Song, Myeonghun; Kim, Hwajeong; Anthopoulos, Thomas D.; McCulloch, Iain; Bradley, Donal D C; Kim, Youngkyoo

    2016-01-01

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  19. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    Nam, Sungho

    2016-11-18

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  20. Evidence of a 2D Fermi surface due to surface states in a p-type metallic Bi2Te3

    Shrestha, K.; Marinova, V.; Lorenz, B.; Chu, C. W.

    2018-05-01

    We present a systematic quantum oscillations study on a metallic, p-type Bi2Te3 topological single crystal in magnetic fields up to B  =  7 T. The maxima/minima positions of oscillations measured at different tilt angles align to one another when plotted as a function of the normal component of magnetic field, confirming the presence of the 2D Fermi surface. Additionally, the Berry phase, β  =  0.4  ±  0.05 obtained from the Landau level fan plot, is very close to the theoretical value of 0.5 for the Dirac particles, confirming the presence of topological surface states in the Bi2Te3 single crystal. Using the Lifshitz–Kosevich analyses, the Fermi energy is estimated to be meV, which is lower than that of other bismuth-based topological systems. The detection of surface states in the Bi2Te3 crystal can be explained by our previous hypothesis of the lower position of the Fermi surface that cuts the ‘M’-shaped valence band maxima. As a result, the bulk state frequency is shifted to higher magnetic fields, which allows measurement of the surface states signal at low magnetic fields.

  1. Symmetry Principles in the Theory of Transport Properties with Special Reference to p-Type Germanium

    Lawætz, Peter

    1968-01-01

    In order to solve the Boltzmann equation for low external electric and magnetic fields, taking into account details of band structure and scattering as in p-Ge, the influence of crystal symmetry on scattering is discussed. The general symmetry properties of the scattering are considered and it is......In order to solve the Boltzmann equation for low external electric and magnetic fields, taking into account details of band structure and scattering as in p-Ge, the influence of crystal symmetry on scattering is discussed. The general symmetry properties of the scattering are considered...

  2. Magnetic

    Aboud, Essam; El-Masry, Nabil; Qaddah, Atef; Alqahtani, Faisal; Moufti, Mohammed R. H.

    2015-06-01

    The Rahat volcanic field represents one of the widely distributed Cenozoic volcanic fields across the western regions of the Arabian Peninsula. Its human significance stems from the fact that its northern fringes, where the historical eruption of 1256 A.D. took place, are very close to the holy city of Al-Madinah Al-Monawarah. In the present work, we analyzed aeromagnetic data from the northern part of Rahat volcanic field as well as carried out a ground gravity survey. A joint interpretation and inversion of gravity and magnetic data were used to estimate the thickness of the lava flows, delineate the subsurface structures of the study area, and estimate the depth to basement using various geophysical methods, such as Tilt Derivative, Euler Deconvolution and 2D modeling inversion. Results indicated that the thickness of the lava flows in the study area ranges between 100 m (above Sea Level) at the eastern and western boundaries of Rahat Volcanic field and getting deeper at the middle as 300-500 m. It also showed that, major structural trend is in the NW direction (Red Sea trend) with some minor trends in EW direction.

  3. MAGNET

    Benoit Curé

    The cooling down to the nominal temperature of 4.5 K was achieved at the beginning of August, in conjunction with the completion of the installation work of the connection between the power lines and the coil current leads. The temperature gradient on the first exchanger of the cold box is now kept within the nominal range. A leak of lubricant on a gasket of the helium compressor station installed at the surface was observed and several corrective actions were necessary to bring the situation back to normal. The compressor had to be refilled with lubricant and a regeneration of the filters and adsorbers was necessary. The coil cool down was resumed successfully, and the cryogenics is running since then with all parameters being nominal. Preliminary tests of the 20kA coil power supply were done earlier at full current through the discharge lines into the dump resistors, and with the powering busbars from USC5 to UXC5 without the magnet connected. On Monday evening August 25th, at 8pm, the final commissionin...

  4. MAGNET

    B. Curé

    The first phase of the commissioning ended in August by a triggered fast dump at 3T. All parameters were nominal, and the temperature recovery down to 4.5K was carried out in two days by the cryogenics. In September, series of ramps were achieved up to 3 and finally 3.8T, while checking thoroughly the detectors in the forward region, measuring any movement of and around the HF. After the incident of the LHC accelerator on September 19th, corrective actions could be undertaken in the forward region. When all these displacements were fully characterized and repetitive, with no sign of increments in displacement at each field ramp, it was possible to start the CRAFT, Cosmic Run at Four Tesla (which was in fact at 3.8T). The magnet was ramped up to 18.16kA and the 3 week run went smoothly, with only 4 interruptions: due to the VIP visits on 21st October during the LHC inauguration day; a water leak on the cooling demineralized water circuit, about 1 l/min, that triggered a stop of the cooling pumps, and resulte...

  5. MAGNET

    Benoit Curé

    2013-01-01

    Maintenance work and consolidation activities on the magnet cryogenics and its power distribution are progressing according to the schedules. The manufacturing of the two new helium compressor frame units has started. The frame units support the valves, all the sensors and the compressors with their motors. This activity is subcontracted. The final installation and the commissioning at CERN are scheduled for March–April 2014. The overhauls of existing cryogenics equipment (compressors, motors) are in progress. The reassembly of the components shall start in early 2014. The helium drier, to be installed on the high-pressure helium piping, has been ordered and will be delivered in the first trimester of 2014. The power distribution for the helium compressors in SH5 on the 3.3kV network is progressing. The 3.3kV switches, between each compressor and its hot spare compressor, are being installed, together with the power cables for the new compressors. The 3.3kV electrical switchboards in SE5 will ...

  6. Room temperature Q-band electron magnetic resonance study of radicals in X-ray-irradiated L-threonine single crystals

    Vanhaelewyn, Gauthier; Vrielinck, Henk; Callens, Freddy

    2014-01-01

    In the past, decennia radiation-induced radicals were successfully identified by electron magnetic resonance (EMR) in several solid-state amino acids and sugars. The authors present a room temperature (RT) EMR study of the stable radicals produced by X-ray-irradiation in the amino acid L-threonine (CH 3 CH(OH)CH(NH3 + )COO - ). Its chemical structure is similar to that of the well-known dosimetric material L-alanine (CH 3 CH(NH3 + )COO - ), and radiation defects in L-threonine may straightforwardly be compared with the extensively studied L-alanine radicals. The hyperfine coupling tensors of three different radicals were determined at RT using electron nuclear double resonance. These results indicate that the two most abundant radicals share the same basic structure CH 3 .C(OH)CH(NH3 + )COO - , obtained by H-abstraction, but are stabilised in slightly different conformations. The third radical is most probably obtained by deamination (CH 3 CH(OH).CHCOO - ), similar in structure to the stable alanine radical. (authors)

  7. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes.

    Roques, Magali; Wall, Richard J; Douglass, Alexander P; Ramaprasad, Abhinay; Ferguson, David J P; Kaindama, Mbinda L; Brusini, Lorenzo; Joshi, Nimitray; Rchiad, Zineb; Brady, Declan; Guttery, David S; Wheatley, Sally P; Yamano, Hiroyuki; Holder, Anthony A; Pain, Arnab; Wickstead, Bill; Tewari, Rita

    2015-11-01

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei.

  8. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes

    Roques, Magali; Wall, Richard J.; Douglass, Alexander P.; Ramaprasad, Abhinay; Ferguson, David J. P.; Kaindama, Mbinda L.; Brusini, Lorenzo; Joshi, Nimitray; Rchiad, ‍ Zineb; Brady, Declan; Guttery, David S.; Wheatley, Sally P.; Yamano, Hiroyuki; Holder, Anthony A.; Pain, Arnab; Wickstead, Bill; Tewari, Rita

    2015-01-01

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei.

  9. Growth of antimony doped P-type zinc oxide nanowires for optoelectronics

    Wang, Zhong Lin; Pradel, Ken

    2016-09-27

    In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.

  10. Determination of Hot-Carrier Distribution Functions in Uniaxially Stressed p-Type Germanium

    Christensen, Ove

    1973-01-01

    This paper gives a description of an experimental determination of distribution functions in k→ space of hot holes in uniaxially compressed germanium. The hot-carrier studies were made at 85°K at fields up to 1000 V/cm and uniaxial stresses up to 11 800 kg/cm2. The field and stress were always in...... probabilities with stress. A model based on the nonparabolicity of the upper p3 / 2 level is proposed for the negative differential conductivity in stressed p-type Ge....... function has been assumed. The parameters of the distribution function are then fitted to the experimental modulation. The calculation of absorption was performed numerically, using a four-band k→·p→ model. This model was checked for consistency by comparing with piezoabsorption measurements performed...... in thermal equilibrium. The average carrier energy calculated from the distribution function shows a fast increase with stress and almost saturates when the strain splitting of the two p3 / 2 levels reaches the optical-phonon energy. This saturation is interpreted in terms of the change in scattering...

  11. p-type doping by platinum diffusion in low phosphorus doped silicon

    Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

    2003-07-01

    In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

  12. Beryllium doped p-type GaN grown by metal-organic chemical vapor depostion

    Al-Tahtamouni, T.M.; Sedhain, A.; Lin, J.Y.; Jiang, H.X.

    2010-01-01

    The authors report on the growth of Be-doped p-type GaN epilayers by metal-organic chmical vapor deposition (MOCVD). The electrical and optical properties of the Be-doped GaN epilayers were studied by Hall-effect measurements and photoluminescence (PL) spectroscopy. The PL spectra of Be-doped GaN epilayers ethibited two emission lines at 3.36 and 2.71 eV, which were obsent in undoped epilayers. The transition at 3.36 eV was at 3.36 and 2.71eV, which were absent in undoped epilayers. The transition at 3.36 eV was assigned to the transition of free electrons to the neutral Be acceptor Be d eg.. The transition at 2.71 eV was assigned to the transition of electrons bound to deep level donors to the Be d eg. acceptors. Three independent measurements: (a) resistivity vs. temperature, (b) PL peak positions between Be doped and undoped GaN and (c) activation energy of 2.71 eV transition all indicate that the Be energy level is between 120 and 140 meV above the valence band. This is about 20-40 meV shallower than the Mg energy level (160 meV) in GaN. It is thus concluded that Be could be an excellent acceptor dopant in nitride materials. (authors).

  13. Site preference of Mg acceptors and improvement of p-type doping efficiency in nitride alloys.

    Park, Ji-Sang; Chang, K J

    2013-06-19

    We perform first-principles density functional calculations to investigate the effect of Al and In on the formation energy and acceptor level of Mg in group-III nitride alloys. Our calculations reveal a tendency for the Mg dopants to prefer to occupy the lattice sites surrounded with Al atoms, whereas hole carriers are generated in In- or Ga-rich sites. The separation of the Mg dopants and hole carriers is energetically more favourable than a random distribution of dopants, being attributed to the local bonding effect of weak In and strong Al potentials in alloys. As a consequence, the Mg acceptor level, which represents the activation energy of Mg, tends to decrease with increasing numbers of Al next-nearest neighbours, whereas it increases as the number of In next-nearest neighbours increases. Based on the results, we suggest that the incorporation of higher Al and lower In compositions will improve the p-type doping efficiency in quaternary alloys, in comparison with GaN or AlGaN ternary alloys with similar band gaps.

  14. Porous silicon damage enhanced phosphorus and aluminium gettering of p-type Czochralski silicon

    Hassen, M.; Ben Jaballah, A.; Hajji, M.; Rahmouni, H.; Selmi, A.; Ezzaouia, H.

    2005-01-01

    In this work, porous silicon damage (PSD) is presented as a simple sequence for efficient external purification techniques. The method consists of using thin nanoporous p-type silicon on both sides of the silicon substrates with randomly hemispherical voids. Then, two main sample types are processed. In the first type, thin aluminium layers (≥1 μm) are thermally evaporated followed by photo-thermal annealing treatments in N 2 atmosphere at one of several temperatures ranging between 600 and 800 deg. C. In the second type, phosphorus is continually diffused in N 2 /O 2 ambient in a solid phase from POCl 3 solution during heating at one of several temperatures ranging between 750 and 1000 deg. C for 1 h. Hall Effect and Van Der Pauw methods prove the existence of an optimum temperature in the case of phosphorus gettering at 900 deg. C yielding a Hall mobility of about 982 cm 2 V -1 s -1 . However, in the case of aluminium gettering, there is no gettering limit in the as mentioned temperature range. Metal/Si Schottky diodes are elaborated to clarify these improvements. In this study, we demonstrate that enhanced metal solubility model cannot explain the gettering effect. The solid solubility of aluminium is higher than that of P atoms in silicon; however, the device yield confirms the effectiveness of phosphorus as compared to aluminium

  15. A Proposed Method for Improving the Performance of P-Type GaAs IMPATTs

    H. A. El-Motaafy

    2012-07-01

    Full Text Available A special waveform is proposed and assumed to be the optimum waveform for p-type GaAs IMPATTs. This waveform is deduced after careful and extensive study of the performance of these devices. The results presented here indicate the superiority of the performance of the IMPATTs driven by the proposed waveform over that obtained when the same IMPATTs are driven by the conventional sinusoidal waveform. These results are obtained using a full-scale computer simulation program that takes fully into account all the physical effects pertinent to IMPATT operation.  In this paper, it is indicated that the superiority of the proposed waveform is attributed to its ability to reduce the bad effects that usually degrade the IMPATT performance such as the space-charge effect and the drift-velocity dropping below saturation effect. The superiority is also attributed to the ability of the proposed waveform to improve the phase relationship between the terminal voltage and the induced current.Key Words: Computer-Aided Design, GaAs IMPATT, Microwave Engineering

  16. Visible luminescence in photo-electrochemically etched p-type porous silicon: Effect of illumination wavelength

    Naddaf, M.; Hamadeh, H., E-mail: scientific@aec.org.sy [Department of Physics, Atomic Energy Commission of Syria (AECS), P.O. Box 6091 Damascus (Syrian Arab Republic)

    2009-08-31

    The effect of low power density of {approx} 5 {mu}W/cm{sup 2} monochromatic light of different wavelengths on the visible photoluminescence (PL) properties of photo-electrochemically formed p-type porous silicon (PS) has been investigated. Two-peak PL 'red' and 'green' is resolved in PS samples etched under blue-green wavelength illumination; 480, 533 and 580 nm. It is found that the weight of 'green' PL has maxima for the sample illuminated with 533 nm wavelength. Whereas, PL spectra of PS prepared under the influence of red illumination or in dark does not exhibit 'green' PL band, but shows considerable enhancement in the 'red' PL peak intensity. Fourier transform infrared (FTIR) spectroscopic analysis reveals the relationship between the structures of chemical bonding in PS and the observed PL behavior. In particular, the PL efficiency is highly affected by the alteration of the relative content of hydride, oxide and hydroxyl species. Moreover, relative content of hydroxyl group with respect to oxide bonding is seen to have strong relationship to the blue PL. Although, the estimated energy gap value of PS samples shows a considerable enlargement with respect to that of bulk c-Si, the FTIR, low temperature PL and Raman measurements and analysis have inconsistency with quantum confinement of PS.

  17. Visible luminescence in photo-electrochemically etched p-type porous silicon: Effect of illumination wavelength

    Naddaf, M.; Hamadeh, H.

    2010-01-01

    The effect of low power density of ∼5 μWcm - 2 monochromatic light of different wavelengths on the visible photoluminescence (PL) properties of photo-electrochemically formed p-type porous silicon (PS) has been investigated. Tow peak PL red and green is resolved in PS samples etched under blue-green wavelength illumination; 480,533 and 580 nm. It is found that the weight of green PL has maxima for the sample illuminated with 533 nm wavelength whereas, PL spectra of PS prepared under the influence of red illumination or in dark does not exhibit green PL band, but shows considerable enhancement in the red PL peak intensity. Fourier transform infrared (FTIR) spectroscopic analysis reveals the relationship between the structures of chemical bonding in PS and the observed PL behavior. In particular, the PL efficiency is highly affected by the alteration of the relative content of hydride, oxide and hydroxyl species. Moreover, relative content of hydroxyl group with respect to oxide bonding is seen to have strong relationship to the blue PL. Although, the estimated energy gap value of PS samples shows a considerable enlargement with respect to that of bulk c-Si, the FTIR, low temperature PL and Raman measurements and analysis have inconsistency with quantum confinement of PS. (author)

  18. Visible luminescence in photo-electrochemically etched p-type porous silicon: Effect of illumination wavelength

    Naddaf, M.; Hamadeh, H.

    2009-01-01

    The effect of low power density of ∼ 5 μW/cm 2 monochromatic light of different wavelengths on the visible photoluminescence (PL) properties of photo-electrochemically formed p-type porous silicon (PS) has been investigated. Two-peak PL 'red' and 'green' is resolved in PS samples etched under blue-green wavelength illumination; 480, 533 and 580 nm. It is found that the weight of 'green' PL has maxima for the sample illuminated with 533 nm wavelength. Whereas, PL spectra of PS prepared under the influence of red illumination or in dark does not exhibit 'green' PL band, but shows considerable enhancement in the 'red' PL peak intensity. Fourier transform infrared (FTIR) spectroscopic analysis reveals the relationship between the structures of chemical bonding in PS and the observed PL behavior. In particular, the PL efficiency is highly affected by the alteration of the relative content of hydride, oxide and hydroxyl species. Moreover, relative content of hydroxyl group with respect to oxide bonding is seen to have strong relationship to the blue PL. Although, the estimated energy gap value of PS samples shows a considerable enlargement with respect to that of bulk c-Si, the FTIR, low temperature PL and Raman measurements and analysis have inconsistency with quantum confinement of PS.

  19. P-TYPE PLANET–PLANET SCATTERING: KEPLER CLOSE BINARY CONFIGURATIONS

    Gong, Yan-Xiang

    2017-01-01

    A hydrodynamical simulation shows that a circumbinary planet will migrate inward to the edge of the disk cavity. If multiple planets form in a circumbinary disk, successive migration will lead to planet–planet scattering (PPS). PPS of Kepler -like circumbinary planets is discussed in this paper. The aim of this paper is to answer how PPS affects the formation of these planets. We find that a close binary has a significant influence on the scattering process. If PPS occurs near the unstable boundary of a binary, about 10% of the systems can be completely destroyed after PPS. In more than 90% of the systems, there is only one planet left. Unlike the eccentricity distribution produced by PPS in a single star system, the surviving planets generally have low eccentricities if PPS take place near the location of the currently found circumbinary planets. In addition, the ejected planets are generally the innermost of two initial planets. The above results depend on the initial positions of the two planets. If the initial positions of the planets are moved away from the binary, the evolution tends toward statistics similar to those around single stars. In this process, the competition between the planet–planet force and the planet-binary force makes the eccentricity distribution of surviving planets diverse. These new features of P-type PPS will deepen our understanding of the formation of these circumbinary planets.

  20. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    Olszacki, M.; Maj, C.; Bahri, M. Al; Marrot, J.-C.; Boukabache, A.; Pons, P.; Napieralski, A.

    2010-06-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 1017 at cm-3 to 1.6 × 1019 at cm-3. The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 1018-1019 at cm-3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  1. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

    Hong Yu

    2009-04-01

    Full Text Available In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

  2. Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

    Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-03-01

    One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

  3. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes

    Roques, Magali

    2015-11-13

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei.

  4. Reinventing a p-type doping process for stable ZnO light emitting devices

    Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

    2018-06-01

    A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

  5. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    Olszacki, M; Maj, C; Al Bahri, M; Marrot, J-C; Boukabache, A; Pons, P; Napieralski, A

    2010-01-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 10 17 at cm −3 to 1.6 × 10 19 at cm −3 . The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 10 18 –10 19 at cm −3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  6. Defect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy

    Ling, C. C.; Fung, S.; Beling, C. D.; Huimin, Weng

    2001-01-01

    Defects in p-type Zn-doped liquid-encapsulated Czochralski--grown GaSb were studied by the positron lifetime technique. The lifetime measurements were performed on the as-grown sample at temperature varying from 15 K to 297 K. A positron trapping center having a characteristic lifetime of 317 ps was identified as the neutral V Ga -related defect. Its concentration in the as-grown sample was found to be in the range of 10 17 --10 18 cm -3 . At an annealing temperature of 300 o C, the V Ga -related defect began annealing out and a new defect capable of trapping positrons was formed. This newly formed defect, having a lifetime value of 379 ps, is attributed to a vacancy--Zn-defect complex. This defect started annealing out at a temperature of 580 o C. A positron shallow trap having binding energy and concentration of 75 meV and 10 18 cm -3 , respectively, was also observed in the as-grown sample. This shallow trap is attributed to positrons forming hydrogenlike Rydberg states with the ionized dopant acceptor Zn

  7. Inkjet-printed p-type nickel oxide thin-film transistor

    Hu, Hailong; Zhu, Jingguang; Chen, Maosheng; Guo, Tailiang; Li, Fushan

    2018-05-01

    High-performance inkjet-printed nickel oxide thin-film transistors (TFTs) with Al2O3 high-k dielectric have been fabricated using a sol-gel precursor ink. The "coffee ring" effect during the printing process was facilely restrained by modifying the viscosity of the ink to control the outward capillary flow. The impacts on the device performance was studied in detail in consideration of annealing temperature of the nickel oxide film and the properties of dielectric layer. The optimized switching ability of the device were achieved at an annealing temperature of 280 °C on a 50-nm-thick Al2O3 dielectric layer, with a hole mobility of 0.78 cm2/V·s, threshold voltage of -0.6 V and on/off current ratio of 5.3 × 104. The as-printed p-type oxide TFTs show potential application in low-cost, large-area complementary electronic devices.

  8. Experimental study of the organic light emitting diode with a p-type silicon anode

    Ma, G.L.; Xu, A.G.; Ran, G.Z.; Qiao, Y.P.; Zhang, B.R.; Chen, W.X.; Dai, L.; Qin, G.G.

    2006-01-01

    We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO 2 buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/Au cathode. The luminance of the OLED is up to 5600 cd/m 2 at 17 V and 1800 mA/cm 2 , the current efficiency is 0.31 cd/A. Both its luminance and current efficiency are much higher than those of the OLEDs with silicon as the anodes reported previously. The enhancement of the luminance and efficiency can be attributed to an improved balance between the hole- and electron-injection through two efficient ways: 1) restraining the hole-injection by inserting an ultra-thin SiO 2 buffer layer between the Si anode and the organic layers; and 2) enhancing the electron-injection by using a low work function, low optical reflectance and absorption semitransparent Yb/Au cathode

  9. Nuclear magnetic resonance in solids: evolution of spin temperature under multipulse irradiation and high symmetry molecular motions

    Quiroga, Luis

    1982-01-01

    In a first part, autocorrelation functions are calculated taking into account the symmetry of molecular motions by group theoretical techniques. This very general calculation method is then used to evaluate the NMR spin-lattice relaxation times T 1 and T 1 p as a function of the relative orientations of the magnetic field, the crystal and the rotation axis, in particular for cyclic, dihedral and cubic groups. Models of molecular reorientations such as jumps between a finite number of allowed orientations, rotational diffusion and superimposed reorientations are all investigated with the same formalism. In part two, the effect of the coherent excitation of spins, by multipulse sequences of the WHH-4 type, on the evolution of the heat capacity and spin temperature of the dipolar reservoir is analysed. It is shown both theoretically and experimentally that adiabatic (reversible) reduction of the dipolar Hamiltonian and its spin temperature is obtained when the amplitude of pulses (rotation angle) is slowly raised. The sudden switching on and off of the HW-8 sequence is then shown to lead to the same reversible reduction in a shorter time. It is also shown that, by this way, sensibility and selectivity of double resonance measurements of weak gyromagnetic ratio nuclei are strongly increased. This is experimentally illustrated in some cases. (author) [fr

  10. Neutron irradiation therapy machine

    1980-01-01

    Conventional neutron irradiation therapy machines, based on the use of cyclotrons for producing neutron beams, use a superconducting magnet for the cyclotron's magnetic field. This necessitates complex liquid He equipment and presents problems in general hospital use. If conventional magnets are used, the weight of the magnet poles considerably complicates the design of the rotating gantry. Such a therapy machine, gantry and target facilities are described in detail. The use of protons and deuterons to produce the neutron beams is compared and contrasted. (U.K.)

  11. Study of Schottky diodes made on Mn doped p-type InP

    Žďánský, Karel; Kozak, Halina; Sopko, B.; Pekárek, Ladislav

    2008-01-01

    Roč. 19, č. 1 (2008), S333-S337 ISSN 0957-4522 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100520 Keywords : Schottky effect * semiconductors * deep levels Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.054, year: 2008

  12. Intercomparison of graphite irradiations

    Hering, H; Perio, P; Seguin, M [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires

    1959-07-01

    While fast neutrons only are effective in damaging graphite, results of irradiations are more or less universally expressed in terms of thermal neutron fluxes. This paper attempts to correlate irradiations made in different reactors, i.e., in fluxes of different spectral compositions. Those attempts are based on comparison of 1) bulk length change and volume expansion, and 2) crystalline properties (e.g., lattice parameter C, magnetic susceptibility, stored energy, etc.). The methods used by various authors for determining the lattice constants of irradiated graphite are discussed. (author)

  13. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes

    Ferguson, David J. P.; Kaindama, Mbinda L.; Brusini, Lorenzo; Joshi, Nimitray; Rchiad, Zineb; Brady, Declan; Guttery, David S.; Wheatley, Sally P.; Yamano, Hiroyuki; Holder, Anthony A.; Pain, Arnab; Wickstead, Bill; Tewari, Rita

    2015-01-01

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei. PMID:26565797

  14. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Dehzangi, Arash; Larki, Farhad; Naseri, Mahmud G.; Navasery, Manizheh; Majlis, Burhanuddin Y.; Razip Wee, Mohd F.; Halimah, M.K.; Islam, Md. Shabiul; Md Ali, Sawal H.; Saion, Elias

    2015-01-01

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated

  15. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2015-04-15

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

  16. Field-induced surface passivation of p-type silicon by using AlON films

    Ghosh, S.N.; Parm, I.O.; Dhungel, S.K.; Jang, K.S.; Jeong, S.W.; Yoo, J.; Hwang, S.H.; Yi, J. [School of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun dong, Jangan-gu, Suwon-440746 (Korea)

    2008-02-15

    In the present work, we report on the evidence for a high negative charge density in aluminum oxynitride (AlON) coating on silicon. A comparative study was carried out on the composition and electrical properties of AlON and aluminum nitride (AlN). AlON films were deposited on p-type Si (1 0 0) substrate by RF magnetron sputtering using a mixture of argon and oxygen gases at substrate temperature of 300 C. The electrical properties of the AlON, AlN films were studied through capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) using the films as insulating layers. The flatband voltage shift V{sub FB} observed for AlON is around 4.5 V, which is high as compared to the AlN thin film. Heat treatment caused the V{sub FB} reduction to 3 V, but still the negative charge density was observed to be very high. In the AlN film, no fixed negative charge was observed at all. The XRD spectrum of AlON shows the major peaks of AlON (2 2 0) and AlN (0 0 2), located at 2{theta} value of 32.96 and 37.8 , respectively. The atomic percentage of Al, N in AlN film was found to be 42.5% and 57.5%, respectively. Atomic percentages of Al, N and O in EDS of AlON film are 20.21%, 27.31% and 52.48%, respectively. (author)

  17. Host and Pathogen Copper-Transporting P-Type ATPases Function Antagonistically during Salmonella Infection.

    Ladomersky, Erik; Khan, Aslam; Shanbhag, Vinit; Cavet, Jennifer S; Chan, Jefferson; Weisman, Gary A; Petris, Michael J

    2017-09-01

    Copper is an essential yet potentially toxic trace element that is required by all aerobic organisms. A key regulator of copper homeostasis in mammalian cells is the copper-transporting P-type ATPase ATP7A, which mediates copper transport from the cytoplasm into the secretory pathway, as well as copper export across the plasma membrane. Previous studies have shown that ATP7A-dependent copper transport is required for killing phagocytosed Escherichia coli in a cultured macrophage cell line. In this investigation, we expanded on these studies by generating Atp7a LysMcre mice, in which the Atp7a gene was specifically deleted in cells of the myeloid lineage, including macrophages. Primary macrophages isolated from Atp7a LysMcre mice exhibit decreased copper transport into phagosomal compartments and a reduced ability to kill Salmonella enterica serovar Typhimurium compared to that of macrophages isolated from wild-type mice. The Atp7a LysMcre mice were also more susceptible to systemic infection by S Typhimurium than wild-type mice. Deletion of the S Typhimurium copper exporters, CopA and GolT, was found to decrease infection in wild-type mice but not in the Atp7a LysMcre mice. These studies suggest that ATP7A-dependent copper transport into the phagosome mediates host defense against S Typhimurium, which is counteracted by copper export from the bacteria via CopA and GolT. These findings reveal unique and opposing functions for copper transporters of the host and pathogen during infection. Copyright © 2017 American Society for Microbiology.

  18. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  19. Influence of electron beam irradiation on electrical, structural, magnetic and thermal properties of Pr{sub 0.8}Sr{sub 0.2}MnO{sub 3} manganites

    Christopher, Benedict [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Rao, Ashok, E-mail: ashokanu_rao@rediffmail.com [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Petwal, Vikash Chandra; Verma, Vijay Pal; Dwivedi, Jishnu [Industrial Accelerator Section, PSIAD, Raja Ramanna Centre for Advanced Technology, Indore 452012, M.P. (India); Lin, W.J. [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Kuo, Y.-K., E-mail: ykkuo@mail.ndhu.edu.tw [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China)

    2016-12-01

    In this communication, the effect of electron beam (EB) irradiation on the structural, electrical transport and thermal properties of Pr{sub 0.8}Sr{sub 0.2}MnO{sub 3} manganites has been investigated. Rietveld refinement of XRD data reveals that all samples are single phased with orthorhombic distorted structure (Pbnm). It is observed that the orthorhombic deformation increases with EB dosage. The Mn–O–Mn bond angle is found to increase with increase in EB dosage, presumably due to strain induced by these irradiations. Analysis on the measured electrical resistivity data indicates that the small polaron hopping model is operative in the high temperature region for pristine as well as EB irradiated samples. The electrical resistivity in the entire temperature region has been successfully fitted with the phenomenological percolation model which is based on phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions. The Seebeck coefficient (S) of the pristine as well as the irradiated samples exhibit positive values, indicating that holes is the dominant charge carriers. The analysis of Seebeck coefficient data confirms that the small polaron hopping mechanism governs the thermoelectric transport in the high temperature region. In addition, Seebeck coefficient data also is well fitted with the phenomenological percolation model. The behavior in thermal conductivity at the transition is ascribed to the local anharmonic distortions associated with small polarons. Specific heat measurement indicates that electron beam irradiation enhances the magnetic inhomogeneity of the system.

  20. Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

    Marton, M.; Mikolášek, M.; Bruncko, J.; Novotný, I.; Ižák, Tibor; Vojs, M.; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

    2015-01-01

    Roč. 66, č. 5 (2015), s. 277-281 ISSN 1335-3632 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) 7AMB14SK024 Institutional support: RVO:68378271 Keywords : boron doped diamond * zinc oxide * Raman spectroscopy * bipolar heterostructure * wide-bandgap Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.407, year: 2015

  1. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

    Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2018-03-01

    We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.

  2. Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

    Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

    2010-01-01

    Full text : Semiconductor ZnO thin films with wide band gap attract much interest due to their properties such as chemical stability in hydrogen plasma, high optical transparency in the visible and nearinfrared region. Due to these properties ZnO oxide is a promising materials for electronic or optoelectronic applications such as solar cell (as an antireflecting coating and a transparent conducting material), gas sensors, surface acoustic wave devices. The purpose of this research is to improve the properties of n and p-type ZnO thin films for device applications. Polycrystalline ZnO is naturally n-type and very difficult to dope to make p-type. Therefore nowadays hardly produced p-type ZnO attracts a lot of attention. Nitrogen considered as the best dopant for p-type ZnO thin films.The transparent, conductive and very precise thickness controlled n and p-type semiconducting nanocrystalline ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. Structural, optical and electrical properties of these films were investigated. And also photoluminescence properties of these films were investigated. Transparent p-type ZnO thin films were produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride thin films were deposited with various thicknesses and under different oxygen pressures on glass substrates. Zinc nitride thin films, which were deposited at room temperatures, were amorphous and the optical transmission was below 70%. For oxidation zinc nitride, the sample was annealed in air starting from 350 degrees Celsium up to 550 degrees Celsium for one hour duration. These XRD patterns imply that zinc nitride thin films converted to zinc oxide thin films with the same hexagonal crystalline structures of ZnO. The optical measurements were made for each annealing temperature and the optical transmissions of ZnO thin films were found better than 90 percent in visible range after annealing over 350 degrees Celsium. By

  3. Influence of γ- radiation on the recombination properties of P-type nickel doped silicon

    Kurbanov, A.O.; Karimov, M.

    2006-01-01

    Full text: It is well known that the life-time of the charge carriers is most sensitive parameter of the semiconductors. The results of numerous investigations show that by irradiation of the multi-crystal silicon with high-energy particles (electrons, protons, γ-quanta) the life-time of the minor charge carriers appreciably decreases. Ones think that the reason of such effect is the generation of the recombination radiation defects by irradiation. In this connection in this work the investigation of the nickel doped silicon with various post-diffusion cooling is performed. As an initial material the p - Si with ∼ 10 Ohm·cm specific resistance was used. The dislocation density is taken to be ∼10 4 cm -2 . Doping of silicon by nickel carried out in the temperature range of 1050-1150 degree C with succeeding I and II type cooling. The life-time of the charge carriers was determined using the stationary photoconductivity method. It is discovered that the life-time of the charge carriers in p-Si is longer than that in the control silicon as well as τ slightly increases by increasing of the nickel's atoms concentration (in these samples the acceptor centers concentration changes in the range of 1.5·10 14 - 3.5·10 14 cm -3 ). This effect is explained on a basis of investigations of the photoconductivity relaxation kinetics (at 70 K) by the capture of the charge carriers to the sticking level. It is revealed that the relative life-time changing is appreciably various one from other in I and II type samples. In the rapid cooled samples τ more stable than slow cooled samples. In the rapid cooled samples more stable than slow cooled samples up to doze ∼2.5·10 8 R. (author)

  4. The role of the VZn-NO-H complex in the p-type conductivity in ZnO.

    Amini, M N; Saniz, R; Lamoen, D; Partoens, B

    2015-02-21

    Past research efforts aiming at obtaining stable p-type ZnO have been based on complexes involving nitrogen doping. A recent experiment by (J. G. Reynolds et al., Appl. Phys. Lett., 2013, 102, 152114) demonstrated a significant (∼10(18) cm(-3)) p-type behavior in N-doped ZnO films after appropriate annealing. The p-type conductivity was attributed to a VZn-NO-H shallow acceptor complex, formed by a Zn vacancy (VZn), N substituting O (NO), and H interstitial (Hi). We present here a first-principles hybrid functional study of this complex compared to the one without hydrogen. Our results confirm that the VZn-NO-H complex acts as an acceptor in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZn-NO, a complex known to exhibit (unstable) p-type behavior. However, this additional H atom also occupies the hole level at the origin of the shallow behavior of VZn-NO, leaving only two states empty higher in the band gap and making the VZn-NO-H complex a deep acceptor. Therefore, we conclude that the cause of the observed p-type conductivity in experiment is not the presence of the VZn-NO-H complex, but probably the formation of the VZn-NO complex during the annealing process.

  5. Inorganic p-Type Semiconductors: Their Applications and Progress in Dye-Sensitized Solar Cells and Perovskite Solar Cells

    Ming-Hsien Li

    2016-04-01

    Full Text Available Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive features, i.e., good performance, low-cost potential, simple processibility, a wide range of applications from portable power generation to power-windows, photoelectrochemical solar cells like dye-sensitized solar cells (DSCs represent one of the promising methods for future large-scale power production directly from sunlight. While the sensitization of n-type semiconductors (n-SC has been intensively studied, the use of p-type semiconductor (p-SC, e.g., the sensitization of wide bandgap p-SC and hole transport materials with p-SC have also been attracting great attention. Recently, it has been proved that the p-type inorganic semiconductor as a charge selective material or a charge transport material in organometallic lead halide perovskite solar cells (PSCs shows a significant impact on solar cell performance. Therefore the study of p-type semiconductors is important to rationally design efficient DSCs and PSCs. In this review, recent published works on p-type DSCs and PSCs incorporated with an inorganic p-type semiconductor and our perspectives on this topic are discussed.

  6. n- and p-type transport in (110) GaAs substrates, single- and double-cleave structures

    Roth, S.F.

    2007-06-06

    In this work low-dimensional systems based on GaAs/AlGaAs are investigated with either holes (p-type) in two-dimensional (2D) systems or electrons (n-type) in one-dimensional (1D) systems as charge carriers. Two-dimensional hole systems (2DHS) are grown with molecular beam epitaxy both on (110) wafers and (1 anti 10) facets with the cleaved-edge overgrowth (CEO) method. We use Si as an acceptor by modulating the growth conditions to fabricate the 2DHS in single-interface heterojunction quantum wells. The mobility of the structures reaches up to 7.0 x 10{sup 5} cm{sup 2}/Vs along the [1 anti 10]-direction and 4.1 x 10{sup 5} cm{sup 2}/Vs along the [001]-direction at a hole density of 1.2 x 10{sup 11} cm{sup -2}. Effective values for anisotropic effective hole masses and scattering times are obtained. Inversion asymmetry induced spin splitting results in different spin densities, which yield beatings of the Shubnikov-de Haas oscillations at low temperatures. In a perpendicular magnetic field the 2DHS is quantized into Landau levels, which depend nonlinearly on B due to a strong mixing of light- and heavy-holes. When the Landau levels anticross on the (110) facet, additional peaks appear within minima of the quantum Hall effect. Thermal activation measurements demonstrate a B-dependent energy gap consistent with such an anticrossing. In the second part of the thesis an electron quantum wire is fabricated with twofold cleaved-edge overgrowth. A variation of the conduction band energy in the substrate layers can directly transfer a potential modulation to the adjacent quantum wire. The concept of a transfer potential applied to a narrow two-dimensional system is demonstrated as a first step. Finally, in narrow quantum well samples a simple vertical quantum wire is successfully demonstrated and contacted at each end with n{sup +}-GaAs layers via two-dimensional (2D) leads. We characterize the 2D lead density and mobility for both cleave facets with four

  7. Peculiarities of high electric field conduction in p-type diamond

    Mortet, Vincent; Trémouilles, D.; Bulíř, Jiří; Hubík, Pavel; Heller, Luděk; Bedel-Pereira, E.; Soltani, A.

    2016-01-01

    Roč. 108, č. 15 (2016), s. 1-4, č. článku 152106. ISSN 0003-6951 R&D Projects: GA ČR GA13-31783S; GA MŠk 7AMB16FR004 Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 Keywords : diamanod * elemental semiconductors * ionization * doping * avalanche photodiodes Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.411, year: 2016

  8. Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

    Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

    1993-01-01

    We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

  9. Proton Pumping and Slippage Dynamics of a Eukaryotic P-Type ATPase Studied at the Single-Molecule Level

    Veshaguri, Salome

    In all eukaryotes the plasma membrane potential and secondary transport systems are energized by P-type ATPases whose regulation however remains poorly understood. Here we monitored at the single-molecule level the activity of the prototypic proton pumping P-type ATPase Arabidopsis thaliana isoform....... We propose that variable ATP/H+ stoichiometry emerges as a novel mechanism for adaptation when challenged with depletion of ATP that is likely relevant for other ATPases. Such measurements will provide indispensable insights into the mechanisms of function and regulation of many other ion...

  10. Controlled oxygen vacancy induced p-type conductivity in HfO{sub 2-x} thin films

    Hildebrandt, Erwin; Kurian, Jose; Mueller, Mathis M.; Kleebe, Hans-Joachim; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, 15236 Frankfurt/Oder (Germany)

    2011-09-12

    We have synthesized highly oxygen deficient HfO{sub 2-x} thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10{sup 21} charge carriers per cm{sup 3}. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

  11. Food irradiation

    Soothill, R.

    1987-01-01

    The issue of food irradiation has become important in Australia and overseas. This article discusses the results of the Australian Consumers' Association's (ACA) Inquiry into food irradiation, commissioned by the Federal Government. Issues discussed include: what is food irradiation; why irradiate food; how much food is consumer rights; and national regulations

  12. Food irradiation

    Lindqvist, H.

    1996-01-01

    This paper is a review of food irradiation and lists plants for food irradiation in the world. Possible applications for irradiation are discussed, and changes induced in food from radiation, nutritional as well as organoleptic, are reviewed. Possible toxicological risks with irradiated food and risks from alternative methods for treatment are also brought up. Ways to analyze weather food has been irradiated or not are presented. 8 refs

  13. Crystallization of P-type ATPases by the High Lipid-Detergent (HiLiDe) Method

    Sitsel, Oleg; Wang, Kaituo; Liu, Xiangyu

    2016-01-01

    Determining structures of membrane proteins remains a significant challenge. A technique utilizing high lipid-detergent concentrations ("HiLiDe") circumvents the major bottlenecks of current membrane protein crystallization methods. During HiLiDe, the protein-lipid-detergent ratio is varied in a ...... crystallization techniques. The method has been applied with particular success to P-type ATPases....

  14. Micro Raman and photoluminescence spectroscopy of nano-porous n and p type GaN/sapphire(0001).

    Ingale, Alka; Pal, Suparna; Dixit, V K; Tiwari, Pragya

    2007-06-01

    Variation of depth within a single etching spot (3 mm circular diameter) was observed in nanoporous GaN epilayer obtained on photo-assisted electrochemical etching of n and p-type GaN. The different etching depth regions were studied using microRaman and PL(yellow region) for both n-type and p-type GaN. From Raman spectroscopy, we observed that increase in disorder is accompanied by stress relaxation, as depth of etching increases for n-type GaN epilayer. This is well corroborated with scanning electron microscopy results. Contrarily, for p-type GaN epilayer we found that for minimum etching depth, stress in epilayer increases with increase in disorder. This is understood with the fact that as grown p-type GaN is more disordered compared to n-type GaN due to heavy Mg doping and further disorder leads to lattice distortion leading to increase in stress.

  15. Study of araldite in edge protection of n-type and p-type surface barrier detectors

    Alencar, M.A.V.; Jesus, E.F.O.; Lopes, R.T.

    1995-01-01

    The aim of this work is the realization of a comparative study between the surface barrier detectors performance n and type using the epoxy resin Araldite as edge protection material with the purpose of determining which type of detector (n or p) the use of Araldite is more indicated. The surface barrier detectors were constructed using n and p type silicon wafer with resistivity of 3350Ω.cm and 5850 Ω.cm respectively. In the n type detectors, the metals used as ohmic and rectifier contacts were the Al and Au respectively, while in the p type detectors, the ohmic and rectifier contacts were Au and Al. All metallic contacts were done by evaporation in high vacuum (∼10 -4 Torr) and with deposit of 40 μm/cm 2 . The obtained results for the detectors (reverse current of -350nA and resolution from 21 to 26 keV for p type detectors and reserve current of 1μA and resolution from 44 to 49 keV for n type detectors) tend to demonstrate that use of epoxy resin Araldite in the edge protection is more indicated to p type surface barrier detectors. (author). 3 refs., 4 figs., 1 tab

  16. Nanomechanical properties of thick porous silicon layers grown on p- and p+-type bulk crystalline Si

    Charitidis, C.A.; Skarmoutsou, A.; Nassiopoulou, A.G.; Dragoneas, A.

    2011-01-01

    Highlights: → The nanomechanical properties of bulk crystalline Si. → The nanomechanical properties of porous Si. → The elastic-plastic deformation of porous Si compared to bulk crystalline quantified by nanoindentation data analysis. - Abstract: The nanomechanical properties and the nanoscale deformation of thick porous Si (PSi) layers of two different morphologies, grown electrochemically on p-type and p+-type Si wafers were investigated by the depth-sensing nanoindentation technique over a small range of loads using a Berkovich indenter and were compared with those of bulk crystalline Si. The microstructure of the thick PSi layers was characterized by field emission scanning electron microscopy. PSi layers on p+-type Si show an anisotropic mesoporous structure with straight vertical pores of diameter in the range of 30-50 nm, while those on p-type Si show a sponge like mesoporous structure. The effect of the microstructure on the mechanical properties of the layers is discussed. It is shown that the hardness and Young's modulus of the PSi layers exhibit a strong dependence on their microstructure. In particular, PSi layers with the anisotropic straight vertical pores show higher hardness and elastic modulus values than sponge-like layers. However, sponge-like PSi layers reveal less plastic deformation and higher wear resistance compared with layers with straight vertical pores.

  17. In silico approaches and chemical space of anti-P-type ATPase compounds for discovering new antituberculous drugs.

    Santos, Paola; López-Vallejo, Fabian; Soto, Carlos-Y

    2017-08-01

    Tuberculosis (TB) is one of the most important public health problems around the world. The emergence of multi-drug-resistant (MDR) and extensively drug-resistant (XDR) Mycobacterium tuberculosis strains has driven the finding of alternative anti-TB targets. In this context, P-type ATPases are interesting therapeutic targets due to their key role in ion homeostasis across the plasma membrane and the mycobacterial survival inside macrophages. In this review, in silico and experimental strategies used for the rational design of new anti-TB drugs are presented; in addition, the chemical space distribution based on the structure and molecular properties of compounds with anti-TB and anti-P-type ATPase activity is discussed. The chemical space distribution compared to public compound libraries demonstrates that natural product libraries are a source of novel chemical scaffolds with potential anti-P-type ATPase activity. Furthermore, compounds that experimentally display anti-P-type ATPase activity belong to a chemical space of molecular properties comparable to that occupied by those approved for oral use, suggesting that these kinds of molecules have a good pharmacokinetic profile (drug-like) for evaluation as potential anti-TB drugs. © 2017 John Wiley & Sons A/S.

  18. Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

    Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-07-01

    In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

  19. Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron sputtering

    Ji, Zhenguo [College of Electronic Information, Hangzhou Dianzi University, Hangzhou (China); State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China); Xi, Junhua; Huo, Lijuan; Zhao, Yi [State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China)

    2008-07-01

    P-type transparent conducting tin-antimony oxide (TAO) films were successfully prepared by DC reactive magnetron sputtering followed by post annealing in the air. Structural, optical and electrical properties of the TAO films were investigated. X-ray diffraction studies showed that the films are polycrystalline with orthorhombic structure of Sb{sub 2}O{sub 4}. UV-Visible absorption and transmittance spectra showed that the optical band-gap of the TAO films is about 3.90 eV, and the overall transmittance is higher than 85% in the visible region. Hall effect measurement indicated that the Sn/Sb ratio is a critical parameter to get p-type conducting TAO films. It was found that 0.19p-type TAO films could be obtained. Hole concentration as high as 4.03 x 10{sup 19} cm{sup -3} and electrical resistivity as low as 0.155 {omega}cm were achieved, showing potential applications of TAO films as p-type transparent conducting films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. S-type and P-type habitability in stellar binary systems: A comprehensive approach. I. Method and applications

    Cuntz, M., E-mail: cuntz@uta.edu [Department of Physics, University of Texas at Arlington, Arlington, TX 76019-0059 (United States)

    2014-01-01

    A comprehensive approach is provided for the study of both S-type and P-type habitability in stellar binary systems, which in principle can also be expanded to systems of higher order. P-type orbits occur when the planet orbits both binary components, whereas in the case of S-type orbits, the planet orbits only one of the binary components with the second component considered a perturbator. The selected approach encapsulates a variety of different aspects, which include: (1) the consideration of a joint constraint, including orbital stability and a habitable region for a putative system planet through the stellar radiative energy fluxes ({sup r}adiative habitable zone{sup ;} RHZ), needs to be met; (2) the treatment of conservative, general, and extended zones of habitability for the various systems as defined for the solar system and beyond; (3) the provision of a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are presented for the kind of system in which S-type and P-type habitability is realized; (4) applications of the attained theoretical approach to standard (theoretical) main-sequence stars. In principle, five different cases of habitability are identified, which are S-type and P-type habitability provided by the full extent of the RHZs; habitability, where the RHZs are truncated by the additional constraint of planetary orbital stability (referred to as ST- and PT-type, respectively); and cases of no habitability at all. Regarding the treatment of planetary orbital stability, we utilize the formulae of Holman and Wiegert as also used in previous studies. In this work, we focus on binary systems in circular orbits. Future applications will also consider binary systems in elliptical orbits and provide thorough comparisons to other methods and results given in the literature.

  1. Food irradiation

    Gruenewald, T

    1985-01-01

    Food irradiation has become a matter of topical interest also in the Federal Republic of Germany following applications for exemptions concerning irradiation tests of spices. After risks to human health by irradiation doses up to a level sufficient for product pasteurization were excluded, irradiation now offers a method suitable primarily for the disinfestation of fruit and decontamination of frozen and dried food. Codex Alimentarius standards which refer also to supervision and dosimetry have been established; they should be adopted as national law. However, in the majority of cases where individual countries including EC member-countries so far permitted food irradiation, these standards were not yet used. Approved irradiation technique for industrial use is available. Several industrial food irradiation plants, partly working also on a contractual basis, are already in operation in various countries. Consumer response still is largely unknown; since irradiated food is labelled, consumption of irradiated food will be decided upon by consumers.

  2. Magnetic Resonance Image Guided Radiation Therapy for External Beam Accelerated Partial-Breast Irradiation: Evaluation of Delivered Dose and Intrafractional Cavity Motion

    Acharya, Sahaja; Fischer-Valuck, Benjamin W.; Mazur, Thomas R.; Curcuru, Austen; Sona, Karl; Kashani, Rojano; Green, Olga; Ochoa, Laura; Mutic, Sasa; Zoberi, Imran; Li, H. Harold; Thomas, Maria A., E-mail: mthomas@radonc.wustl.edu

    2016-11-15

    Purpose: To use magnetic resonance image guided radiation therapy (MR-IGRT) for accelerated partial-breast irradiation (APBI) to (1) determine intrafractional motion of the breast surgical cavity; and (2) assess delivered dose versus planned dose. Methods and Materials: Thirty women with breast cancer (stages 0-I) who underwent breast-conserving surgery were enrolled in a prospective registry evaluating APBI using a 0.35-T MR-IGRT system. Clinical target volume was defined as the surgical cavity plus a 1-cm margin (excluding chest wall, pectoral muscles, and 5 mm from skin). No additional margin was added for the planning target volume (PTV). A volumetric MR image was acquired before each fraction, and patients were set up to the surgical cavity as visualized on MR imaging. To determine the delivered dose for each fraction, the electron density map and contours from the computed tomography simulation were transferred to the pretreatment MR image via rigid registration. Intrafractional motion of the surgical cavity was determined by applying a tracking algorithm to the cavity contour as visualized on cine MR. Results: Median PTV volume was reduced by 52% when using no PTV margin compared with a 1-cm PTV margin used conventionally. The mean (± standard deviation) difference between planned and delivered dose to the PTV (V95) was 0.6% ± 0.1%. The mean cavity displacement in the anterior–posterior and superior–inferior directions was 0.6 ± 0.4 mm and 0.6 ± 0.3 mm, respectively. The mean margin required for at least 90% of the cavity to be contained by the margin for 90% of the time was 0.7 mm (5th-95th percentile: 0-2.7 mm). Conclusion: Minimal intrafractional motion was observed, and the mean difference between planned and delivered dose was less than 1%. Assessment of efficacy and cosmesis of this MR-guided APBI approach is under way.

  3. Posterior magnetic effect on the pure and doped Fe-Ni alloy under neutron irradiation; Efeito magnetico posterior na liga Fe-Ni pura e dopada, sob irradiacao neutronica

    Ferreira, Iris

    1974-07-01

    Polycrystalline specimens of unirradiated and neutron irradiated Fe-Ni alloys have been studied in the temperature range RT - 500 deg C. The study was carried out in pure (50-50) as well as in Si, A1, Cr and Mo doped samples. Initial magnetic permeability was measured in unirradiated (virgin)and in neutron irradiated samples, during isochronal and linear thermal treatments. The main results are: a magnetic After Effect (MAE) is detected in the temperature range 370 deg C - Tc, where Tc is the Curie Temperature. In this range an activation energy of 3.2 {+-} 0.2 eV was determined for the Cr doped Fe-Ni alloy (impurity content: 0.1%); measurements made in the irradiated samples, during a linear temperature treatment, show the existence of several MAE zones in the temperature range RT - Tc. The isochronal annealing experiments show that these MAE zones are accompanied by a decrease in the room temperature value of the magnetic permeability, for zones between RT and a certain temperature T{sub 1}. Above this range there is a steep increase in the room temperature permeability. Activation energies were determined for pure and Mo-doped (0.1%) samples for the first MAE zone (50 deg C - 120 deg C). The values obtained 1.25 - 0.08 eV and 1.42 {+-} 0.09 eV, respectively; the impurity - doped samples show a different behaviour relative to the pure ones: samples with low impurity content (0.1% and 0.5% of Si, Al or Mo) present an enhancement in the amplitude and also an overlapping of the diffusion stages. On the other hand, samples with higher impurity content (2 and 4% of Mo) show a decrease in these amplitudes. (author)

  4. Apparatus for irradiation with electron beam

    Uehara, K.; Ito, A.; Nishimune, K.; Fujita, K.

    1976-01-01

    An irradiation apparatus with high energy electrons is disclosed in which a wire shaped or linear object to be irradiated is moved back and forth many times under an electron window so as to irradiate it with an electron beam. According to one feature of the invention, an electron beam, which leaks through gaps between the objects to be irradiated or which penetrates the objects to be irradiated, is reversed by a magnetic field approximately perpendicular to the scanning face of the electron beam by means of a magnet which is disposed under the objects to be irradiated, and the reversed electron beam is thereby again applied to the objects to be irradiated. A high utilization rate of the electron beam is accomplished, and the objects can be thereby uniformly irradiated with the electron beam. 4 claims, 6 drawing figures

  5. Food irradiation

    Sato, Tomotaro; Aoki, Shohei

    1976-01-01

    Definition and significance of food irradiation were described. The details of its development and present state were also described. The effect of the irradiation on Irish potatoes, onions, wiener sausages, kamaboko (boiled fish-paste), and mandarin oranges was evaluated; and healthiness of food irradiation was discussed. Studies of the irradiation equipment for Irish potatoes in a large-sized container, and the silo-typed irradiation equipment for rice and wheat were mentioned. Shihoro RI center in Hokkaido which was put to practical use for the irradiation of Irish potatoes was introduced. The state of permission of food irradiation in foreign countries in 1975 was introduced. As a view of the food irradiation in the future, its utilization for the prevention of epidemics due to imported foods was mentioned. (Serizawa, K.)

  6. Gamma irradiator

    Simonet, G.

    1986-09-01

    Fiability of devices set around reactors depends on material resistance under irradiation noticeably joints, insulators, which belongs to composition of technical, safety or physical incasurement devices. The irradiated fuel elements, during their desactivation in a pool, are an interesting gamma irradiation device to simulate damages created in a nuclear environment. The existing facility at Osiris allows to generate an homogeneous rate dose in an important volume. The control of the element distances to irradiation box allows to control this dose rate [fr

  7. Food irradiation

    Anon.

    1985-01-01

    The article explains what radiation does to food to preserve it. Food irradiation is of economic importance to Canada because Atomic Energy of Canada Limited is the leading world supplier of industrial irradiators. Progress is being made towards changing regulations which have restricted the irradiation of food in the United States and Canada. Examples are given of applications in other countries. Opposition to food irradiation by antinuclear groups is addressed

  8. Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2016-08-21

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  9. Fitting Formulae and Constraints for the Existence of S-type and P-type Habitable Zones in Binary Systems

    Wang Zhaopeng; Cuntz, Manfred

    2017-01-01

    We derive fitting formulae for the quick determination of the existence of S-type and P-type habitable zones (HZs) in binary systems. Based on previous work, we consider the limits of the climatological HZ in binary systems (which sensitively depend on the system parameters) based on a joint constraint encompassing planetary orbital stability and a habitable region for a possible system planet. Additionally, we employ updated results on planetary climate models obtained by Kopparapu and collaborators. Our results are applied to four P-type systems (Kepler-34, Kepler-35, Kepler-413, and Kepler-1647) and two S-type systems (TrES-2 and KOI-1257). Our method allows us to gauge the existence of climatological HZs for these systems in a straightforward manner with detailed consideration of the observational uncertainties. Further applications may include studies of other existing systems as well as systems to be identified through future observational campaigns.

  10. Strong compensation hinders the p-type doping of ZnO: a glance over surface defect levels

    Huang, B.

    2016-07-01

    We propose a surface doping model of ZnO to elucidate the p-type doping and compensations in ZnO nanomaterials. With an N-dopant, the effects of N on the ZnO surface demonstrate a relatively shallow acceptor level in the band gap. As the dimension of the ZnO materials decreases, the quantum confinement effects will increase and render the charge transfer on surface to influence the shifting of Fermi level, by evidence of transition level changes of the N-dopant. We report that this can overwhelm the intrinsic p-type conductivity and transport of the ZnO bulk system. This may provide a possible route of using surface doping to modify the electronic transport and conductivity of ZnO nanomaterials.

  11. Structural models of the human copper P-type ATPases ATP7A and ATP7B

    Gourdon, P.; Sitsel, Oleg; Karlsen, J.L.

    2012-01-01

    The human copper exporters ATP7A and ATP7B contain domains common to all P-type ATPases as well as class-specific features such as six sequential heavy-metal binding domains (HMBD1-HMBD6) and a type-specific constellation of transmembrane helices. Despite the medical significance of ATP7A and ATP7B......, allowing protein-specific properties to be addressed. Furthermore, the mapping of known disease-causing missense mutations indicates that among the heavy-metal binding domains, HMBD5 and HMBD6 are the most crucial for function, thus mimicking the single or dual HMBDs found in most copper-specific P-type...

  12. Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

    Yang, Jing; Zhao, Degang; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Zhang, Y. T.; Du, G. T.

    2015-01-01

    The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg Ga acceptors and passivating donor defects. A decrease in p-type resistivity when O 2 is introduced during the postannealing process is attributed to the fact that annealing in an O 2 -containing environment can enhance the dissociation of Mg Ga -H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation

  13. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-08-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

  14. P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

    Al-Jawhari, Hala A.

    2013-10-09

    P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

  15. Fitting Formulae and Constraints for the Existence of S-type and P-type Habitable Zones in Binary Systems

    Wang Zhaopeng; Cuntz, Manfred, E-mail: zhaopeng.wang@mavs.uta.edu, E-mail: cuntz@uta.edu [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States)

    2017-10-01

    We derive fitting formulae for the quick determination of the existence of S-type and P-type habitable zones (HZs) in binary systems. Based on previous work, we consider the limits of the climatological HZ in binary systems (which sensitively depend on the system parameters) based on a joint constraint encompassing planetary orbital stability and a habitable region for a possible system planet. Additionally, we employ updated results on planetary climate models obtained by Kopparapu and collaborators. Our results are applied to four P-type systems (Kepler-34, Kepler-35, Kepler-413, and Kepler-1647) and two S-type systems (TrES-2 and KOI-1257). Our method allows us to gauge the existence of climatological HZs for these systems in a straightforward manner with detailed consideration of the observational uncertainties. Further applications may include studies of other existing systems as well as systems to be identified through future observational campaigns.

  16. Food irradiation

    Beyers, M.

    1977-01-01

    The objectives of food irradiation are outlined. The interaction of irradiation with matter is then discussed with special reference to the major constituents of foods. The application of chemical analysis in the evaluation of the wholesomeness of irradiated foods is summarized [af

  17. S-TYPE AND P-TYPE HABITABILITY IN STELLAR BINARY SYSTEMS: A COMPREHENSIVE APPROACH. II. ELLIPTICAL ORBITS

    Cuntz, M., E-mail: cuntz@uta.edu [Department of Physics, University of Texas at Arlington, Arlington, TX 76019-0059 (United States)

    2015-01-10

    In the first paper of this series, a comprehensive approach has been provided for the study of S-type and P-type habitable regions in stellar binary systems, which was, however, restricted to circular orbits of the stellar components. Fortunately, a modest modification of the method also allows for the consideration of elliptical orbits, which of course entails a much broader range of applicability. This augmented method is presented here, and numerous applications are conveyed. In alignment with Paper I, the selected approach considers a variety of aspects, which comprise the consideration of a joint constraint including orbital stability and a habitable region for a possible system planet through the stellar radiative energy fluxes ({sup r}adiative habitable zone{sup ;} RHZ). The devised method is based on a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are deduced for which kinds of systems S-type and P-type habitable zones are realized. If the RHZs are truncated by the additional constraint of orbital stability, the notation of ST-type and PT-type habitability applies. In comparison to the circular case, it is found that in systems of higher eccentricity, the range of the RHZs is significantly reduced. Moreover, for a considerable number of models, the orbital stability constraint also reduces the range of S-type and P-type habitability. Nonetheless, S-, P-, ST-, and PT-type habitability is identified for a considerable set of system parameters. The method as presented is utilized for BinHab, an online code available at The University of Texas at Arlington.

  18. Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

    Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

    2017-06-01

    Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

  19. Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

    Patsha, Avinash; Amirthapandian, S.; Pandian, Ramanathaswamy; Bera, S.; Bhattacharya, Anirban; Dhara, Sandip

    2015-01-01

    Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices. Knowledge of the dopant incorporation and its pathways in nanowires for such devices is limited by the growth methods. We report the direct evidence of incorporation pathway for Mg dopants in p-type nonpolar GaN nanowires grown via vapour-liquid-solid (VLS) method in a chemical vapour deposition te...

  20. S-TYPE AND P-TYPE HABITABILITY IN STELLAR BINARY SYSTEMS: A COMPREHENSIVE APPROACH. II. ELLIPTICAL ORBITS

    Cuntz, M.

    2015-01-01

    In the first paper of this series, a comprehensive approach has been provided for the study of S-type and P-type habitable regions in stellar binary systems, which was, however, restricted to circular orbits of the stellar components. Fortunately, a modest modification of the method also allows for the consideration of elliptical orbits, which of course entails a much broader range of applicability. This augmented method is presented here, and numerous applications are conveyed. In alignment with Paper I, the selected approach considers a variety of aspects, which comprise the consideration of a joint constraint including orbital stability and a habitable region for a possible system planet through the stellar radiative energy fluxes ( r adiative habitable zone ; RHZ). The devised method is based on a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are deduced for which kinds of systems S-type and P-type habitable zones are realized. If the RHZs are truncated by the additional constraint of orbital stability, the notation of ST-type and PT-type habitability applies. In comparison to the circular case, it is found that in systems of higher eccentricity, the range of the RHZs is significantly reduced. Moreover, for a considerable number of models, the orbital stability constraint also reduces the range of S-type and P-type habitability. Nonetheless, S-, P-, ST-, and PT-type habitability is identified for a considerable set of system parameters. The method as presented is utilized for BinHab, an online code available at The University of Texas at Arlington

  1. Change in the electrical conductivity of SnO2 crystal from n-type to p-type conductivity

    Villamagua, Luis; Stashans, Arvids; Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi; Carini, Manuela

    2015-01-01

    Highlights: • Switch from n-type to p-type conductivity in SnO 2 has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO 2 compound shows stable p-type conductivity. • Low resistivity (3.657 × 10 −1 Ω cm) has been obtained. • High carrier concentration (4.858 × 10 19 cm −3 ) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO 2 systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO 2 material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling

  2. Properties and local environment of p-type and photoluminescent rare earths implanted into ZnO single crystals

    Rita, EMC; Wahl, U; Soares, JC

    This thesis presents an experimental study of the local environment of p-type and Rare- Earth dopants implanted in ZnO single-crystals (SCs). Various nuclear and bulk property techniques were combined in the following evaluations: Implantation damage annealing was evaluated in ZnO SCs implanted with Fe, Sr and Ca. P-type dopants Cu and Ag implanted ZnO SCs were studied revealing that the solubility of Cu in substituting Zn is considerably higher than that of Ag. These results are discussed within the scope of the ZnO p-type doping problematic with these elements. Experimental proofs of the As “anti-site” behavior in ZnO were for the first time attained, i.e., the majority of As atoms are substitutional at the Zn site (SZn), possibly surrounded by two Zn vacancies (VZn). This reinforces the theoretical prediction that As acts as an acceptor in ZnO via the AsZn-2VZn complex formation. The co-doping of ZnO SC with In (donor) and As (acceptor) was addressed. The most striking result is the possible In-As “p...

  3. Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

    Giraud, Paul; Hou, Bo; Pak, Sangyeon; Inn Sohn, Jung; Morris, Stephen; Cha, SeungNam; Kim, Jong Min

    2018-02-01

    We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V-1 s-1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W-1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.

  4. Thermal Stability of P-Type BiSbTe Alloys Prepared by Melt Spinning and Rapid Sintering

    Yun Zheng

    2017-06-01

    Full Text Available P-type BiSbTe alloys have been widely implemented in waste heat recovery from low-grade heat sources below 600 K, which may involve assorted environments and conditions, such as long-term service, high-temperature exposure (generally 473–573 K and mechanical forces. It is important to evaluate the service performance of these materials in order to prevent possible failures in advance and extend the life cycle. In this study, p-type Bi0.5Sb1.5Te3 commercial zone-melting (ZM ingots were processed by melt spinning and subsequent plasma-activated sintering (MS-PAS, and were then subjected to vacuum-annealing at 473 and 573 K, respectively, for one week. The results show that MS-PAS samples exhibit excellent thermal stability when annealed at 473 K. However, thermal annealing at 573 K for MS-PAS specimens leads to the distinct sublimation of the element Te, which degrades the hole concentration remarkably and results in inferior thermoelectric performance. Furthermore, MS-PAS samples annealed at 473 K demonstrate a slight enhancement in flexural and compressive strengths, probably due to the reduction of residual stress induced during the sintering process. The current work guides the reliable application of p-type Bi0.5Sb1.5Te3 compounds prepared by the MS-PAS technique.

  5. Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

    Hai-Qing, Xiao; Chun-Lan, Zhou; Xiao-Ning, Cao; Wen-Jing, Wang; Lei, Zhao; Hai-Ling, Li; Hong-Wei, Diao

    2009-01-01

    Al 2 O 3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 10 12 cm −2 is detected in the Al 2 O 3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO 2 and plasma enhanced chemical vapor deposition SiN x :H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al 2 O 3 . (cross-disciplinary physics and related areas of science and technology)

  6. Food irradiation

    Macklin, M.

    1987-01-01

    The Queensland Government has given its support the establishment of a food irradiation plant in Queensland. The decision to press ahead with a food irradiation plant is astonishing given that there are two independent inquiries being carried out into food irradiation - a Parliamentary Committee inquiry and an inquiry by the Australian Consumers Association, both of which have still to table their Reports. It is fair to assume from the Queensland Government's response to date, therefore, that the Government will proceed with its food irradiation proposals regardless of the outcomes of the various federal inquiries. The reasons for the Australian Democrats' opposition to food irradiation which are also those of concerned citizens are outlined

  7. Food irradiation

    Duchacek, V.

    1989-01-01

    The ranges of doses used for food irradiation and their effect on the processed foods are outlined. The wholesomeness of irradiated foods is discussed. The present food irradiation technology development in the world is described. A review of the irradiated foods permitted for public consumption, the purposes of food irradiaton, the doses used and a review of the commercial-scale food irradiators are tabulated. The history and the present state of food processing in Czechoslovakia are described. (author). 1 fig., 3 tabs., 13 refs

  8. Irradiated foods

    Darrington, Hugh

    1988-06-01

    This special edition of 'Food Manufacture' presents papers on the following aspects of the use of irradiation in the food industry:- 1) an outline view of current technology and its potential. 2) Safety and wholesomeness of irradiated and non-irradiated foods. 3) A review of the known effects of irradiation on packaging. 4) The problems of regulating the use of irradiation and consumer protection against abuse. 5) The detection problem - current procedures. 6) Description of the Gammaster BV plant in Holland. 7) World outline review. 8) Current and future commercial activities in Europe. (U.K.)

  9. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  10. Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

    Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

    2015-01-01

    We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

  11. Microcystin-LR removal from aqueous solutions using a magnetically separable N-doped TiO2 nanocomposite under visible light irradiation

    The performance of magnetically separable N-doped TiO2 was found to be significantly improved when compared with a non-magnetic N-doped TiO2 for the aqueous removal of cyanotoxin Microcystin-LR. The observed enhanced photocatalytic activity may be related to the presence of ferri...

  12. Modulated charge injection in p-type dye-sensitized solar cells using fluorene-based light absorbers.

    Liu, Zonghao; Xiong, Dehua; Xu, Xiaobao; Arooj, Qudsia; Wang, Huan; Yin, Liyuan; Li, Wenhui; Wu, Huaizhi; Zhao, Zhixin; Chen, Wei; Wang, Mingkui; Wang, Feng; Cheng, Yi-Bing; He, Hongshan

    2014-03-12

    In this study, new pull-push arylamine-fluorene based organic dyes zzx-op1, zzx-op2, and zzx-op3 have been designed and synthesized for p-type dye-sensitized solar cells (p-DSCs). In zzx-op1, a di(p-carboxyphenyl)amine (DCPA) was used as an electron donor, a perylenemonoimide (PMID) as an electron acceptor, and a fluorene (FLU) unit with two aliphatic hexyl chains as a π-conjugated linker. In zzx-op2 and zzx-op3, a 3,4-ethylenedioxythiophene (EDOT) and a thiophene were inserted consecutively between PMID and FLU to tune the energy levels of the frontier molecular orbitals of the dyes. The structural modification broadened the spectral coverage from an onset of 700 nm for zzx-op1 to 750 nm for zzx-op3. The electron-rich EDOT and thiophene lifted up the HOMO (highest occupied molecular orbital) levels of zzx-op2 and zzx-op3, making their potential more negative than zzx-op1. When three dyes were employed in p-type DSCs with I(-)/I3(-) as a redox couple and NiO nanoparticles as hole materials, zzx-op1 exhibited impressive energy conversion efficiency of 0.184% with the open-circuit voltage (VOC) of 112 mV and the short-circuit current density (JSC) of 4.36 mA cm(-2) under AM 1.5G condition. Density functional theory calculations, transient photovoltage decay measurements, and electrochemical impedance spectroscopic studies revealed that zzx-op1 sensitized solar cell exhibited much higher charge injection efficiency (90.3%) than zzx-op2 (53.9%) and zzx-op3 (39.0%), indicating a trade-off between spectral broadening and electron injection driving force in p-type DSCs.

  13. Influence of nanosized inclusions on the room temperature thermoelectrical properties of a p-type bismuth–tellurium–antimony alloy

    Bernard-Granger, Guillaume; Addad, Ahmed; Navone, Christelle; Soulier, Mathieu; Simon, Julia; Szkutnik, Pierre-David

    2012-01-01

    Transmission electron microscopy observations and thermoelectrical property measurements (electrical conductivity, Seebeck coefficient and thermal conductivity) at room temperature have been completed on two fully dense polycrystalline p-type bismuth–tellurium–antimony alloy samples. It is shown that the presence of antimony oxide-based nanosized inclusions (controlled as to volume fraction and size distribution), homogeneously dispersed in the surrounding matrix leads to a dimensionless figure of merit (ZT) of ∼1.3 at room temperature. For comparison, when such inclusions are missing the ZT value is only 0.6.

  14. Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

    Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

    2014-01-01

    The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

  15. Surface accumulation conduction controlled sensing characteristic of p-type CuO nanorods induced by oxygen adsorption

    Wang, C; Fu, X Q; Xue, X Y; Wang, Y G; Wang, T H

    2007-01-01

    P-type CuO nanorods were synthesized by a hydrothermal method and the ethanol-sensing properties of sensors based on CuO were investigated. The sensor resistance increased when it was exposed to ethanol and decreased in the air, which is contrary to the case for sensors realized from n-type semiconductor. The resistance of the CuO-based sensor was about 2 kΩ in air and 6 kΩ in ethanol vapour with concentration of 2000 ppm. Such a sensing property is attributed to surface accumulation conduction. Sensors based on CuO nanorods have potential applications in detecting ethanol in low concentration

  16. Foodstuff irradiation

    1982-01-01

    Report written on behalf of the Danish Food Institute summarizes national and international rules and developments within food irradiation technology, chemical changes in irradiated foodstuffs, microbiological and health-related aspects of irradiation and finally technological prospects of this conservation form. Food irradiatin has not been hitherto applied in Denmark. Radiation sources and secondary radiation doses in processed food are characterized. Chemical changes due to irradiation are compared to those due to p.ex. food heating. Toxicological and microbiological tests and their results give no unequivocal answer to the problem whether a foodstuff has been irradiated. The most likely application fields in Denmark are for low radiation dosis inhibition of germination, riping delay and insecticide. Medium dosis (1-10 kGy) can reduce bacteria number while high dosis (10-50 kGy) will enable total elimination of microorganisms and viruses. Food irradiation can be acceptable as technological possibility with reservation, that further studies follow. (EG)

  17. Analysis of n-in-p type silicon detectors for high radiation environment with fast analogue and binary readout systems

    Printz, Martin

    2016-01-22

    sensor technology and module design will be deployed. Silicon strip and macro-pixel sensors in the future CMS experiment will face a fluence of up to Φ=1 x 10{sup 15} n{sub eq}cm{sup -2}s{sup -1} after an integrated luminosity of 3000 fb{sup -1} and 10 years of operation in HL-LHC conditions. Therefore the radiation hardness of the sensors must guarantee high charge collection efficiency which degrades with increasing radiation damage. Therefore extensive radiation damage and charge collection studies have been exercised in order to find the most suitable sensor material and layout which will withstand the harsh operation environment. The key technology has been decided to be p-type substrate whereby electrons with a high mobility and less trapping effects are collected by the readout electrodes. However, this technology requires detailed investigations of the necessary isolation layer which prevents a build up of an accumulation layer below the sensor surface which would directly lead to a lower resolution of the tracker. Furthermore, an elevated particle or track density requires a higher granularity. Hence the strip length of the sensors and the strip pitch will be reduced resulting in more channels and as a direct consequence more data which has to be transmitted out of the tracker volume. In contrary to the current tracker, the signal level will be compared to a threshold by the new binary readout chip CBC and just the binary hit information will be processed to the next instance. In addition, the tracker will contribute to the global Level-1 trigger decision. The contribution will be achieved by the correlation logic of the binary readout chip which detects hits on two stacked sensors in one module. Depending on the particle curvature in the CMS 3.8 T magnetic field, the transverse momentum p{sub T} of the traversing particles is estimated on-chip and compared to a programable threshold. Simulations indicate, that rejecting hits from low momentum particles in the

  18. Hemibody irradiation

    Schen, B.C.; Mella, O.; Dahl, O.

    1992-01-01

    In a large number of cancer patients, extensive skeletal metastases or myelomatosis induce vast suffering, such as intolerable pain and local complications of neoplastic bone destruction. Analgetic drugs frequently do not yield sufficient palliation. Irradiation of local fields often has to be repeated, because of tumour growth outside previously irradiated volumes. Wide field irradiation of the lower or upper half of the body causes significant relief of pain in most patients. Adequate pretreatment handling of patients, method of irradiation, and follow-up are of importance to reduce side effects, and are described as they are carried out at the Department of Oncology, Haukeland Hospital, Norway. 16 refs., 2 figs

  19. Shape induced (spherical, sheets and rods) optical and magnetic properties of CdS nanostructures with enhanced photocatalytic activity for photodegradation of methylene blue dye under ultra-violet irradiation

    Ahmed, Bilal; Kumar, Sachin; Kumar, Sumeet; Ojha, Animesh K., E-mail: animesh@mnnit.ac.in

    2016-09-15

    CdS nanostructures of different shapes such as, nanoparticles (NPs), nanosheets (NS) and nanorods (NRs) have been synthesized by one step chemical solvothermal method. The synthesized samples were characterized by X-ray diffractometer (XRD), transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, UV–visible (UV-VIS) spectroscopy, Raman spectroscopy (RS) and vibrating sample magnetometer (VSM) techniques. The effect of shape on optical and magnetic properties of CdS nanostructures was studied. The optical band gap and emission spectra are found to be shape dependent. CdS NRs were found to have high saturation (Ms) magnetization than that of CdS NPs and NS. The role of shape on photocatalytic performance of CdS NPs, NS and NRs was investigated by monitoring the photodegradation of methylene blue (MB) dye under the UV irradiation of wavelength 365 nm. The lower recombination rate of electron-hole pairs and larger surface area as reactive facets for adsorption of MB dye molecules in CdS NS are mainly lead to the better photocatalytic performance of CdS NS compared to NPs and NRs. - Highlights: • Synthesis of CdS nanostructures with different shapes (spherical, rod and sheet) by easy and low cost solvothermal method. • Shape induced optical and magnetic properties of CdS nanostructures have been investigated. • The shapes of nanostructures play an important role for photocatalytic performance of CdS nanostructures.

  20. Charge transport in non-irradiated and irradiated silicon detectors

    Leroy, C.; Roy, P.; Casse, G.L.; Glaser, M.; Grigoriev, E.; Lemeilleur, F.

    1999-01-01

    A model describing the transport of the charge carriers generated in n-type silicon detectors by ionizing particles is presented. In order to reproduce the experimental current pulse responses induced by α and β particles in non-irradiated and irradiated detectors up to fluences (PHI) much beyond the n to p-type inversion, an n-type region 15 μm deep is introduced on the p + side of the diode. This model also gives mobilities which decrease linearly up to fluences of around 5x10 13 particles/cm 2 and beyond, converging to saturation values of about 1000 and 450 cm 2 /V s for electrons and holes, respectively. The charge carrier lifetime degradation with increased fluence, due to trapping, is responsible for a predicted charge collection deficit for β particles and for α particles which is found to agree with direct CCE measurements. (author)

  1. Biological responses of human solid tumor cells to X-ray irradiation within a 1.5-Tesla magnetic field generated by a magnetic resonance imaging–linear accelerator

    Wang, Li; Hoogcarspel, Stan Jelle; Wen, Zhifei; van Vulpen, Marco; Molkentine, David P.; Kok, Jan; Lin, Steven H.; Broekhuizen, Roel; Ang, Kie Kian; Bovenschen, Niels; Raaymakers, Bas W.; Frank, Steven J.

    2016-01-01

    Devices that combine magnetic resonance imaging with linear accelerators (MRL) represent a novel tool for MR-guided radiotherapy. However, whether magnetic fields (MFs) generated by these devices affect the radiosensitivity of tumors is unknown. We investigated the influence of a 1.5-T MF on cell

  2. Hole polaron-polaron interaction in transition metal oxides and its limit to p-type doping

    Chen, Shiyou; Wang, Lin-Wang

    2014-03-01

    Traditionally the origin of the poor p-type conductivity in some transition metal oxides (TMOs) was attributed to the limited hole concentration: the charge-compensating donor defects, such as oxygen vacancies and cation interstitials, can form spontaneously as the Fermi energy shifts down to near the valence band maximum. Besides the thermodynamic limit to the hole concentration, the limit to the hole mobility can be another possible reason, e.g., the hole carrier can form self-trapped polarons with very low carrier mobility. Although isolated hole polarons had been found in some TMOs, the polaron-polaron interaction is not well-studied. Here we show that in TMOs such as TiO2 and V2O5, the hole polarons prefer to bind with each other to form bipolarons, which are more stable than free hole carriers or separated polarons. This pushes the hole states upward into the conduction band and traps the holes. The rise of the Fermi energy suppresses the spontaneous formation of the charge-compensating donor defects, so the conventional mechanism becomes ineffective. Since it can happen in the impurity-free TMO lattices, independent of any extrinsic dopant, it acts as an intrinsic and general limit to the p-type conductivity in these TMOs. This material is based upon work performed by the JCAP, a US DOE Energy Innovation Hub, the NSFC (No. 61106087 and 91233121) and special funds for major state basic research (No. 2012CB921401).

  3. Search for Pauli exclusion principle violating atomic transitions and electron decay with a p-type point contact germanium detector

    Abgrall, N.; Bradley, A.W.; Chan, Y.D.; Mertens, S.; Poon, A.W.P. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Arnquist, I.J.; Hoppe, E.W.; Kouzes, R.T.; LaFerriere, B.D.; Orrell, J.L. [Pacific Northwest National Laboratory, Richland, WA (United States); Avignone, F.T. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); Barabash, A.S.; Konovalov, S.I.; Yumatov, V. [National Research Center ' ' Kurchatov Institute' ' Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Bertrand, F.E.; Galindo-Uribarri, A.; Radford, D.C.; Varner, R.L.; White, B.R.; Yu, C.H. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Brudanin, V.; Shirchenko, M.; Vasilyev, S.; Yakushev, E.; Zhitnikov, I. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Busch, M. [Duke University, Department of Physics, Durham, NC (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Buuck, M.; Cuesta, C.; Detwiler, J.A.; Gruszko, J.; Guinn, I.S.; Leon, J.; Robertson, R.G.H. [University of Washington, Department of Physics, Center for Experimental Nuclear Physics and Astrophysics, Seattle, WA (United States); Caldwell, A.S.; Christofferson, C.D.; Dunagan, C.; Howard, S.; Suriano, A.M. [South Dakota School of Mines and Technology, Rapid City, SD (United States); Chu, P.H.; Elliott, S.R.; Goett, J.; Massarczyk, R.; Rielage, K. [Los Alamos National Laboratory, Los Alamos, NM (United States); Efremenko, Yu. [University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Ejiri, H. [Osaka University, Research Center for Nuclear Physics, Ibaraki, Osaka (Japan); Finnerty, P.S.; Gilliss, T.; Giovanetti, G.K.; Henning, R.; Howe, M.A.; MacMullin, J.; Meijer, S.J.; O' Shaughnessy, C.; Rager, J.; Shanks, B.; Trimble, J.E.; Vorren, K.; Xu, W. [Triangle Universities Nuclear Laboratory, Durham, NC (United States); University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC (United States); Green, M.P. [North Carolina State University, Department of Physics, Raleigh, NC (United States); Oak Ridge National Laboratory, Oak Ridge, TN (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Guiseppe, V.E.; Tedeschi, D.; Wiseman, C. [University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); Jasinski, B.R. [University of South Dakota, Department of Physics, Vermillion, SD (United States); Keeter, K.J. [Black Hills State University, Department of Physics, Spearfish, SD (United States); Kidd, M.F. [Tennessee Tech University, Cookeville, TN (United States); Martin, R.D. [Queen' s University, Department of Physics, Engineering Physics and Astronomy, Kingston, ON (Canada); Romero-Romero, E. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Vetter, K. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); University of California, Department of Nuclear Engineering, Berkeley, CA (United States); Wilkerson, J.F. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC (United States)

    2016-11-15

    A search for Pauli-exclusion-principle-violating K{sub α} electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of 5.8 x 10{sup 30} s at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the X-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of 6.8 x 10{sup 30} s at 90% C.L. It is estimated that the Majorana Demonstrator, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of {sup 76}Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation. (orig.)

  4. Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

    Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

    2016-08-31

    The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

  5. Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

    Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

    2015-08-01

    A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

  6. High performance p-type segmented leg of misfit-layered cobaltite and half-Heusler alloy

    Hung, Le Thanh; Van Nong, Ngo; Snyder, G. Jeffrey; Viet, Man Hoang; Balke, Benjamin; Han, Li; Stamate, Eugen; Linderoth, Søren; Pryds, Nini

    2015-01-01

    Highlights: • p-type segmented leg of oxide and half-Heusler was for the first time demonstrated. • The maximum conversion efficiency reached a value of about 5%. • The results are among the highest reported values so far for oxide-based legs. • Oxide-based segmented leg is very promising for generating electricity. - Abstract: In this study, a segmented p-type leg of doped misfit-layered cobaltite Ca 2.8 Lu 0.15 Ag 0.05 Co 4 O 9+δ and half-Heusler Ti 0.3 Zr 0.35 Hf 0.35 CoSb 0.8 Sn 0.2 alloy was fabricated and characterized. The thermoelectric properties of single components, segmented leg, and the electrical contact resistance of the joint part were measured as a function of temperature. The output power generation characteristics of segmented legs were characterized in air under various temperature gradients, ΔT, with the hot side temperature up to 1153 K. At ΔT ≈ 756 K, the maximum conversion efficiency reached a value of ∼5%, which is about 65% of that expected from the materials without parasitic losses. The long-term stability investigation for two weeks at the hot and cold side temperatures of 1153/397 K shows that the segmented leg has good durability as a result of stable and low electrical resistance contacts

  7. Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

    Wang, Shanyu; Zheng, Gang; Luo, Tingting; She, Xiaoyu; Li, Han; Tang, Xinfeng

    2011-11-01

    In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ~4.7 × 1019 cm-3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ~1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ~1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ~70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

  8. Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

    Wang Shanyu; Zheng Gang; Luo Tingting; She Xiaoyu; Li Han; Tang Xinfeng

    2011-01-01

    In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ∼4.7 × 10 19 cm -3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ∼1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ∼1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ∼70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

  9. P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

    Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

    2017-10-01

    In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

  10. Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

    Dhere, Sunetra L.; Latthe, Sanjay S. [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India); Kappenstein, Charles [University of Poitiers, Laboratory of Catalysis in Organic Chemistry, LA CCO, UMR CNRS 6503, Poitiers-86000 (France); Mukherjee, S.K. [Fuel Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai - 400085, Maharashtra India (India); Rao, A. Venkateswara, E-mail: avrao2012@gmail.com [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India)

    2010-04-01

    Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 A. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle {approx}156{sup o}) while that on glass it is hydrophilic (contact angle {approx}88{sup o}). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.

  11. Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

    Dhere, Sunetra L.; Latthe, Sanjay S.; Kappenstein, Charles; Mukherjee, S.K.; Rao, A. Venkateswara

    2010-01-01

    Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 A. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle ∼156 o ) while that on glass it is hydrophilic (contact angle ∼88 o ). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.

  12. Preparation and thermoelectric properties of p-Type PrzFe4-xCoxSb12 skutterudites

    Shin, Dong-Kil; Kim, Il-Ho

    2014-01-01

    p-Type Pr z Fe 4-x Co x Sb 12 (z = 0.8, 1.0 and x = 0, 0.5, 1.0) skutterudites were synthesized by encapsulated melting and annealing and were consolidated with hot pressing. The effects of Pr filling and Co substitution for Fe (charge compensation) on the transport and the thermoelectric properties were examined. A few secondary phases, such as Sb and FeSb 2 , were formed together with the skutterudite phase, but the formation was suppressed with increasing Pr and Co contents. We confirmed that Pr filled in the voids and that Co was substituted for Fe in all specimens because the lattice constant increased with increasing Pr content and decreased with increasing Co content. The electrical conductivity decreased slightly with increasing temperature, showing degenerate semiconductor characteristics. The Hall and the Seebeck coefficients showed positive signs, indicating that the major carriers were holes (p-type conduction). The electrical conductivity and the thermal conductivity were decreased due to a decrease in the carrier concentration with increasing Pr and Co contents. As a result, the dimensionless figure of merit, ZT, was improved by Pr filling and Co substitution, and a maximum ZT = 0.89 was obtained at 723 K for Pr 0.8 Fe 3 CoSb 12 .

  13. Structural studies of P-type ATPase–ligand complexes using an X-ray free-electron laser

    Maike Bublitz

    2015-07-01

    Full Text Available Membrane proteins are key players in biological systems, mediating signalling events and the specific transport of e.g. ions and metabolites. Consequently, membrane proteins are targeted by a large number of currently approved drugs. Understanding their functions and molecular mechanisms is greatly dependent on structural information, not least on complexes with functionally or medically important ligands. Structure determination, however, is hampered by the difficulty of obtaining well diffracting, macroscopic crystals. Here, the feasibility of X-ray free-electron-laser-based serial femtosecond crystallography (SFX for the structure determination of membrane protein–ligand complexes using microcrystals of various native-source and recombinant P-type ATPase complexes is demonstrated. The data reveal the binding sites of a variety of ligands, including lipids and inhibitors such as the hallmark P-type ATPase inhibitor orthovanadate. By analyzing the resolution dependence of ligand densities and overall model qualities, SFX data quality metrics as well as suitable refinement procedures are discussed. Even at relatively low resolution and multiplicity, the identification of ligands can be demonstrated. This makes SFX a useful tool for ligand screening and thus for unravelling the molecular mechanisms of biologically active proteins.

  14. Structural studies of P-type ATPase–ligand complexes using an X-ray free-electron laser

    Bublitz, Maike; Nass, Karol; Drachmann, Nikolaj D.; Markvardsen, Anders J.; Gutmann, Matthias J.; Barends, Thomas R. M.; Mattle, Daniel; Shoeman, Robert L.; Doak, R. Bruce; Boutet, Sébastien; Messerschmidt, Marc; Seibert, Marvin M.; Williams, Garth J.; Foucar, Lutz; Reinhard, Linda; Sitsel, Oleg; Gregersen, Jonas L.; Clausen, Johannes D.; Boesen, Thomas; Gotfryd, Kamil; Wang, Kai-Tuo; Olesen, Claus; Møller, Jesper V.; Nissen, Poul; Schlichting, Ilme

    2015-06-11

    Membrane proteins are key players in biological systems, mediating signalling events and the specific transport ofe.g.ions and metabolites. Consequently, membrane proteins are targeted by a large number of currently approved drugs. Understanding their functions and molecular mechanisms is greatly dependent on structural information, not least on complexes with functionally or medically important ligands. Structure determination, however, is hampered by the difficulty of obtaining well diffracting, macroscopic crystals. Here, the feasibility of X-ray free-electron-laser-based serial femtosecond crystallography (SFX) for the structure determination of membrane protein–ligand complexes using microcrystals of various native-source and recombinant P-type ATPase complexes is demonstrated. The data reveal the binding sites of a variety of ligands, including lipids and inhibitors such as the hallmark P-type ATPase inhibitor orthovanadate. By analyzing the resolution dependence of ligand densities and overall model qualities, SFX data quality metrics as well as suitable refinement procedures are discussed. Even at relatively low resolution and multiplicity, the identification of ligands can be demonstrated. This makes SFX a useful tool for ligand screening and thus for unravelling the molecular mechanisms of biologically active proteins.

  15. Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

    Sakwe, S. A.; Müller, R.; Wellmann, P. J.

    2006-04-01

    We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

  16. Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature

    Al-Jawhari, Hala A.

    2013-12-01

    Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling -0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of -2V. The advantages of using STO as a gate dielectric relative to ATO are discussed. © (2014) Trans Tech Publications, Switzerland.

  17. Characterization of a heavy metal translocating P-type ATPase gene from an environmental heavy metal resistance Enterobacter sp. isolate.

    Chien, Chih-Ching; Huang, Chia-Hsuan; Lin, Yi-Wei

    2013-03-01

    Heavy metals are common contaminants found in polluted areas. We have identified a heavy metal translocating P-type ATPase gene (hmtp) via fosmid library and in vitro transposon mutagenesis from an Enterobacter sp. isolate. This gene is believed to participate in the bacterium's heavy metal resistance traits. The complete gene was identified, cloned, and expressed in a suitable Escherichia coli host cell. E. coli W3110, RW3110 (zntA::Km), GG48 (ΔzitB::Cm zntA::Km), and GG51 (ΔzitB::Cm) were used to study the possible effects of this gene for heavy metal (cadmium and zinc in particular) resistance. Among the E. coli strains tested, RW3110 and GG48 showed more sensitivity to cadmium and zinc compared to the wild-type E. coli W3110 and strain GG51. Therefore, strains RW3110 and GG48 were chosen for the reference hosts for further evaluation of the gene's effect. The results showed that expression of this heavy metal translocating P-type ATPase gene could increase the ability for zinc and cadmium resistance in the tested microorganisms.

  18. Efficiency for close geometries and extended sources of a p-type germanium detector with low-energy sensitivity

    Keyser, R.M.; Twomey, T.R.

    2007-01-01

    Typically, germanium detectors designed to have good sensitivity to low-energy photons and good efficiency at high energies are constructed from n-type crystals with a boron-implanted outer contact. These detectors usually exhibit inferior resolution and peak shape compared to ones made from p-type crystals. To overcome the resolution and peak-shape deficiencies, a new method of construction of a germanium detector element was developed. This has resulted in a gamma-ray detector with high sensitivity to photon energies from 14 keV to 2 MeV, while maintaining good resolution and peak shape over this energy range. Efficiency measurements, done according to the draft IEEE 325-2004 standard, show efficiencies typical of a GMX or n-type detector at low energies. The detectors are of large diameter suitable for counting extended samples such as filter papers. The Gaussian peak shape and good resolution typical of a GEM or p-type are maintained for the high count rates and peak separation needed for activation analysis. (author)

  19. Food irradiation

    Mercader, J.P.; Emily Leong

    1985-01-01

    The paper discusses the need for effective and efficient technologies in improving the food handling system. It defines the basic premises for the development of food handling. The application of food irradiation technology is briefly discussed. The paper points out key considerations for the adoption of food irradiation technology in the ASEAN region (author)

  20. Food irradiation

    Matsuyama, Akira

    1990-01-01

    This paper reviews researches, commentaries, and conference and public records of food irradiation, published mainly during the period 1987-1989, focusing on the current conditions of food irradiation that may pose not only scientific or technologic problems but also political issues or consumerism. Approximately 50 kinds of food, although not enough to fill economic benefit, are now permitted for food irradiation in the world. Consumerism is pointed out as the major factor that precludes the feasibility of food irradiation in the world. In the United States, irradiation is feasible only for spices. Food irradiation has already been feasible in France, Hollands, Belgium, and the Soviet Union; has under consideration in the Great Britain, and has been rejected in the West Germany. Although the feasibility of food irradiation is projected to increase gradually in the future, commercial success or failure depends on the final selection of consumers. In this respect, the role of education and public information are stressed. Meat radicidation and recent progress in the method for detecting irradiated food are referred to. (N.K.) 128 refs