Specific heat of Nb3Sn and V2Zr compounds irradiated with high fluences fast neutrons

International Nuclear Information System (INIS)

Kar'kin, A.E.; Mirmel'shtejn, A.V.; Arkhipov, V.E.; Goshchitskij, B.N.

1987-01-01

Specific heat of Nb 3 Sn (structure A15) and V 2 Zr (C15) specimens irradiated with high fluences of bast neutrons has been measured. It is shown that in these compounds the temperature reduction of superconducting transition T c under neutron irradiation is accompanied with high decrease of N(E F ). Phonon spectrum of the irradiated V 2 Zr (amorphous phase) on the whole is harder, than at an initial state, for irradiated Nb 3 Sn state (disordered crystalline structure) phonon spectrum is differ weakly from initial one. General regularities of parameter change of electron and phonon subsystems for A15 compounds investigated here and earlier (V 3 Si, Mo 3 Si, Mo 3 Ge) have been analysed

Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

Directory of Open Access Journals (Sweden)

V. G. Vorobiov

2015-10-01

Full Text Available Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

Evaluation of induced radioactivity in 10 MeV-Electron irradiated spices, (2); [beta]-ray counting

Energy Technology Data Exchange (ETDEWEB)

Katayama, Tadashi; Furuta, Masakazu; Shibata, Setsuko; Matsunami, Tadao; Ito, Norio; Mizohata, Akira; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

1994-02-01

In order to check radioactivity of beta-emmitters produced by ([gamma], n) reactions which could occur at energies up to 10 MeV, black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy. Beta-rays were counted using a 2[pi] gas flow counter and a liquid scintillation counter. Any induced radioactivity could not be detected in irradiated samples. When inorganic compounds containing the nuclides in the list were artificially added in the samples and were irradiated, the [beta]-activities were detected. From the amount of observed radioactivities of [beta]-emmitters produced in the compounds as photonuclear products, it is concluded that the induced radioactivity in natural samples by 10 MeV-electron irradiation were far smaller than natural radioactivity from [sup 40]K contained in the samples and, hence, its biological effects should be negligible. (author).

Effects of {gamma}-ray irradiation on the C-V and G/{omega}-V characteristics of Al/SiO{sub 2}/p-Si (MIS) structures

Energy Technology Data Exchange (ETDEWEB)

Doekme, Ilbilge [Science Education Department, Faculty of Education, Ahi Evran University, Kirsehir (Turkey)], E-mail: ilbilgedokme@gazi.edu.tr; Durmus, Perihan; Altindal, Semsettin [Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Teknikokullar, Ankara (Turkey)

2008-03-15

The effect of the {sup 60}C{sub o} ({gamma}-ray) exposure on the electrical characteristics of Al/SiO{sub 2}/p-Si (MIS) structures has been investigated using capacitance-voltage (C-V) and conductance-voltage (G/{omega}-V) measurements. The MIS structures were stressed with a bias of 0 V during {sup 60}C{sub o}{gamma}-sources irradiation with the total dose range from 0 to 25 kGy. The C-V and G/{omega}-V characteristics were measured at 500 kHz and room temperature before and after {sup 60}C{sub o}{gamma}-ray irradiation. The results indicated that {gamma}-irradiation caused an increase in the barrier height {phi}{sub B}, interface states N{sub ss} and depletion layer width W{sub D} obtained from reverse bias C-V measurements. The series resistance R{sub s} profile for various radiation doses was obtained from forward and reverse bias C-V and G/{omega}-V measurements. Both C-V and G/{omega}-V characteristics indicate that the total dose radiation hardness of MIS structures may be limited by the decisive properties of the SiO{sub 2}/Si interface to radiation-induced damage. After {gamma}-irradiation, the decrease in capacitance of MIS structure results in the increase in the semiconductor depletion width.

Mechanical properties of organic composite materials irradiated with 2 MeV electrons

International Nuclear Information System (INIS)

Egusa, S.; Kirk, M.A.; Birtcher, R.C.; Argonne National Lab., IL; Hagiwara, M.; Kawanishi, S.

1983-01-01

Four kinds of cloth-filled organic composites (filter: glass or carbon fiber; matrix; epoxy or polyimide resin) were irradiated with 2 MeV electrons at room temperature, and were examined with regard to the mechanical properties. Following irradiation the Young's (tensile) modulus of these composites remains practically unchanged even after irradiation up to 15.000 Mrad. The shear modulus and the ultimate strength, on the other hand, begin to decrease after the absorbed dose reaches about 2.000 Mrad for the glass/epoxy composite and about 5.000-10.000 Mrad for the other composites. This result is ascribed to the decrease in the capacity of load transfer from the matrix to the fiber due to the radiation damage at the interface, and the dose dependence is interpreted and formulated based on the mechanics of composite materials and the target theory used in radiation biology. As to the fracture behavior, the propagation energy increases from the beginning of irradiation. This result is attributed to the radiation-induced decrease in the bonding energy at the interface. (orig.)

Food Irradiation Newsletter. V. 12, no. 2

International Nuclear Information System (INIS)

1988-07-01

This Newsletter reports activities of two ICGFI training workshops convened in Santiago, Chile, and Rehovot, Israel, in the past six months. The summary report of the FAO/IAEA Seminar on Food Irradiation for Developing Countries in Africa is also included. A follow-up to this Seminar is the ''Co-ordinated Research Programme on Food Irradiation for African Countries'' which will be implemented as soon as funds become available. Further, this issue contains a report of the Working Group on Food Irradiation of the European Society for Nuclear Agriculture convened in Stara Zagora, Bulgaria in 1987 and status reports of practical applications of food irradiation in different countries. 2 tabs

Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

Science.gov (United States)

Lee, Jonathan; Flitsiyan, Elena; Chernyak, Leonid; Yang, Jiancheng; Ren, Fan; Pearton, Stephen J.; Meyler, Boris; Salzman, Y. Joseph

2018-02-01

The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped β-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 × 1016 cm-2. The Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose. This revealed activation energies related to shallow donors at 40.9 meV and radiation-induced defects with energies at 18.1 and 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay lifetime and reduction in carrier lifetime with increased irradiation.

MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

International Nuclear Information System (INIS)

Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

2006-01-01

We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors

International Nuclear Information System (INIS)

Laha, P.; Banerjee, I.; Bajaj, A.; Chakraborty, P.; Barhai, P.K.; Dahiwale, S.S.; Das, A.K.; Bhoraskar, V.N.; Kim, D.; Mahapatra, S.K.

2012-01-01

The influence of 6 MeV electron irradiation on the electrical properties of Al/Al 2 O 3 /n-Si metal–oxide–semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al 2 O 3 /n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6 MeV electrons at 10 kGy, 20 kGy, and 30 kGy doses, respectively, keeping the dose rate ∼1 kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V FB ) and interface trap density (D it ) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/ω vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan δ vs V graph. The device parameters were estimated using C–V and G/ω–V measurements. Poole–Frenkel coefficient (β PF ) of the MOS capacitors was determined from leakage current (I)–voltage (V) measurement. The leakage current mechanism was proposed from the β PF value. - Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole-Frenkel effect.

130 MeV Au ion irradiation induced dewetting on In2Te3 thin film

International Nuclear Information System (INIS)

Matheswaran, P.; Abhirami, K.M.; Gokul, B.; Sathyamoorthy, R.; Prakash, Jai; Asokan, K.; Kanjilal, D.

2012-01-01

Highlights: ► In 2 Te 3 phase formed from In/Te bilayer by 130 MeV Au ion irradiation. ► Lower fluence results mixed phases with initial state of dewetting. ► At higher fluence, In 2 Te 3 phase with complete dewetting pattern is formed. ► Thermal spike model is used to explain the inter face mixing phenomena. ► SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 × 10 13 ions/cm 2 . At the higher fluence of 3 × 10 13 ions/cm 2 , dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

2008-06-15

To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

Effects of 3.1-MeV proton and 1-GeV Au-ion irradiation on the magnetic flux noise and critical current of YBa2Cu3O7-δ

International Nuclear Information System (INIS)

Shaw, T.J.; Clarke, J.; van Dover, R.B.; Schneemeyer, L.F.; White, A.E.

1996-01-01

We have used a dc superconducting quantum interference device to measure the spectral density of magnetic flux noise, S Φ (f), generated by vortex motion in crystals of YBa 2 Cu 3 O 7-δ (YBCO) both before and after irradiation with 3.1-MeV protons and 1-GeV Au ions. In addition, we have studied the effects of irradiation on the critical current J c of the same samples. Both types of irradiation reduced S Φ (f) at most temperatures and magnetic fields and increased J c at all temperatures and magnetic fields. By measuring S Φ (f) versus temperature, we extract the distribution of vortex pinning energies, D(U 0 ). Both crystals have peaks in D(U 0 ) near 0.1 eV and 0.2 eV before irradiation, and a much reduced peak near 0.1 eV after irradiation. The noise level after either kind of irradiation was substantially higher than in an unirradiated YBCO film. copyright 1996 The American Physical Society

MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2016-12-15

The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Diffusion of interstitial atoms in FCC metals after irradiation with 2 MeV electrons

International Nuclear Information System (INIS)

Kornmann, H.

1980-01-01

Selfdiffusion in nickel after electron irradiation has been restudied. The diffusion velocity near the surface and the diffusion constant in the interior of the crystal have been determined as a function of radiation flux and temperature. A special method for the measurement of diffusion has been improved, which is based on radioactive tracer atoms for indication and on ion etching for the removal of thin films. To improve additionally the accuracy of the technique tracer atoms are induced into the crystal by thermal diffusion and then irradiated with 2 MeV electrons. (orig./GSCH) [de

The effect of U.V.-irradiation on lambda DNA transcription

International Nuclear Information System (INIS)

Ranade, S.S.

1977-01-01

The effect of U.V.-irradiation of template DNA has been studied in vitro in the E.coli RNA polymerase system with native and U.V.-treated lambda DNA. Lambda DNA was more susceptible to U.V. than was calf-thymus DNA, yet a residual activity was observed at a U.V. dose of 0.5 x 10 4 erg/mm 2 . From the kinetic analysis of the reaction and the incorporation of lambda 32 P-labelled nucleoside triphosphates, it seems reasonable to conclude that U.V.-irradiation probably did not affect the DNA initiation sites, recognizable by RNA polymerase. The transcription products made with U.V.-irradiated lambda DNA were asymmetrical, and hybridized to the right half (R) and the left half (L) of lambda DNA with the ratio of R/L=4/1, and they showed a lower hybridizability than the transcripts with native lambda DNA. The initiation sites recognizable by RNA polymerase seemed to be the same on both native and U.V.-irradiated lambda DNA, though the transcription of U.V.-treated lambda DNA appeared to terminate with rather short RNA chains. (author)

Recovery characteristics of neutron-irradiated V-Ti alloys

International Nuclear Information System (INIS)

Leguey, T.; Pareja, R.

2000-01-01

The recovery characteristics of neutron-irradiated pure V and V-Ti alloys with 1.0 and 4.5 at.% Ti have been investigated by positron annihilation spectroscopy. Microvoid formation during irradiation at 320 K is produced in pure V and V-1Ti but not in V-4.5Ti. The results are consistent with a model of swelling inhibition induced by vacancy trapping by solute Ti during irradiation. The temperature dependencies of the parameter S in the range 8-300 K indicate a large dislocation bias for vacancies and solute Ti. This dislocation bias prevents the microvoid nucleation in V-4.5Ti, and the microvoid growth in V-1Ti, when vacancies become mobile during post-irradiation annealing treatments. A characteristic increase of the positron lifetime is found during recovery induced by isochronal annealing. It is attributed to a vacancy accumulation into the lattice of Ti oxides precipitated during cooling down, or at their matrix/precipitate interfaces. These precipitates could be produced by the decomposition of metastable phases of Ti oxides formed during post-irradiation annealing above 1000 K

75 MeV boron ion irradiation studies on Si PIN photodiodes

Energy Technology Data Exchange (ETDEWEB)

Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

2013-12-01

The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

Effect of 1.2 MeV argon ions irradiation on magnetic properties of ZnO

International Nuclear Information System (INIS)

Mishra, D.K.; Mohapatra, Jyoshnarani; Mahato, Banashree; Kumar, P.; Mitra, Amitav; Singh, S.K.; Kanjilal, D.

2013-01-01

Room temperature ferromagnetism in 1.2 MeV argon ions irradiated polycrystalline ZnO has been observed. The magnetic contribution in form of saturation magnetization is higher in sample irradiated with ion fluence of 1 × 10 15 ions/cm 2 . However, annealing of the defects at higher fluences of 5 × 10 15 ions/cm 2 reduce the magnetic contribution in comparison to the magnetic contribution of the lower fluences. The X-ray diffraction reveals that the degree of crystallinity decreases with the increase of ion fluences upto 1 × 10 15 ions/cm 2 and further it increases at a fluence of 5 × 10 15 ions/cm 2 . The inhomogeneous arrangement of grains and changes in their sizes with increasing ion fluences decrease the magnetic ordering of the system. The electron probe microstructure analyses and micro-Raman spectra of irradiated samples show in-homogeneity in zinc and oxygen ratio which is one of the causes to show ferromagnetism.

Structure Characterization of Modified Polyimide Films Irradiated by 2 MeV Si Ions

International Nuclear Information System (INIS)

Tian-Xiang, Chen; Shu-De, Yao; Kun, Wang; Huan, Wang; Zhi-Bo, Ding; Di, Chen

2009-01-01

Structures of polyimide (6051) films modified by irradiation of 2.0 MeV Si ions with different fluences are studied in detail. Variations of the functional groups in polyimide are investigated by attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and Raman spectroscopy. The results indicate that the functional groups can be destroyed gradually with the increasing ion fluence. The variations of structure and element contents are characterized by x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy (XPS). The results indicate that the contents of N and O decrease significantly compared with the original samples, some graphite-like and carbon-rich phases are formed in the process of irradiation

Gold wetting effects on sapphire irradiated with GeV uranium ions

International Nuclear Information System (INIS)

Ramos, S.M.M.

1997-01-01

Single crystals of α-Al 2 O 3 were irradiated with 238 U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of ∼80 K, with fluences ranging from 1.2 x 10 12 to 2.5 x 10 12 ions cm -2 . After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.)

Food Irradiation Newsletter. V. 11, no. 2

International Nuclear Information System (INIS)

1987-09-01

This issue includes a report of the ICGFI's Workshop on Food Irradiation for Food Control Officials, convened in Budapest, Hungary, May 1987. To provide further assurance on the safety and wholesomeness of irradiated food in general and details about polyploidy (increase in number of chromosomes) resulting from consumption of freshly irradiated wheat in particular, ICGFI Secretariat issued a fact sheet on ''Safety and Wholesomeness of Irradiated Foods: International Status - Facts and Figures'' to its member countries in July 1987. The Newsletter also contains summary reports of two important market testings of irradiated food, i.e. papaya in California in March and strawberries in France in June, which proved that consumers will buy irradiated foods, and status reports on food irradiation in France and Mexico. Ref, 1 tab

Oxidation of SO2 and formation of water droplets under irradiation of 20MeV protons in N2/H2O/SO2

DEFF Research Database (Denmark)

Tomita, Shigeo; Nakai, Yoichi; Funada, Shuhei

2015-01-01

We have performed an experiment on charged droplet formation in a humidified N2 gas with trace SO2 concentration and induced by 20MeV proton irradiation. It is thought that SO2 reacts with the chemical species, such as OH radicals, generated through the reactions triggered by N2+ production. Both...

Food Irradiation Newsletter. V. 14, no. 2

International Nuclear Information System (INIS)

1990-12-01

This issue reports specific training activities on Food Irradiation Process Control School, both for technical supervisors of irradiation facilities and food control officials/inspectors, and summary reports of Workshops on dosimetry techniques for food irradiation and on techno-economic feasibility of food irradiation for Latin American countries are included. After 12 years of operation, the International Facility for Food Irradiation Technology (IFFIT) will cease to function after 31 December 1990. This issue reports the last inter-regional training course organized by IFFIT, and also features reports on food irradiation in Asia. Active developments in the field in several Asian countries may be found in the reports of the Workshop on the Commercialization of Food Irradiation, Shanghai, and the Research Co-ordination Meeting on the Asian Regional Co-operative Project on Food Irradiation (with emphasis on acceptance and process control), Bombay. Status reports of programmes in these countries are also included. Refs and tabs

Dosimetric evaluation of multi-sided irradiation on HDPE pipes under 2 MeV electron beam

Energy Technology Data Exchange (ETDEWEB)

Benny, P.G., E-mail: bennypg@yahoo.com; Khader, S.A.; Sarma, K.S.S.

2014-03-01

The use of electron beam technology has enabled the production of heat resistant pipe for hot water circulation. One of the difficulties in the irradiation of pipe products is the uneven penetration of electrons. Quality of the radiation process depends on radiation dose and homogeneity of the dose distribution, which becomes a major concern when treatments of circular objects like pipes are performed. One method to achieve uniformity in the absorbed dose in the product is to use multi-sided irradiation. The paper discusses the importance of dosimetry mapping in industrial electron beam radiation processing and outlines the challenges in delivering a uniform dose to cylindrical objects. In this study, HDPE pipe of 5 mm thickness of homogeneous material (40 mm outer diameter and 30 mm inner diameter) has been chosen for multi-sided irradiation under 2 MeV scanned electron beam from the ILU-6 accelerator. - Highlights: • The paper outlines the challenges in delivering uniform dose to cylindrical objects at 2 MeV industrial electron beam facility. • HDPE pipe of 40 mm outer diameter and 30 mm inner diameter has been chosen for the study. • The circumferential dose distribution inside and outside of the pipes were evaluated by using calibrated CTA dosimeter strips. • Using stack of dosimeter strips, changes in circumferential dose distribution in the annular region of the pipe was evaluated. • Optimization of multi-sided irradiation on the HDPE pipes for better dose homogeneity is reported in the paper.

Dosimetric evaluation of multi-sided irradiation on HDPE pipes under 2 MeV electron beam

International Nuclear Information System (INIS)

Benny, P.G.; Khader, S.A.; Sarma, K.S.S.

2014-01-01

The use of electron beam technology has enabled the production of heat resistant pipe for hot water circulation. One of the difficulties in the irradiation of pipe products is the uneven penetration of electrons. Quality of the radiation process depends on radiation dose and homogeneity of the dose distribution, which becomes a major concern when treatments of circular objects like pipes are performed. One method to achieve uniformity in the absorbed dose in the product is to use multi-sided irradiation. The paper discusses the importance of dosimetry mapping in industrial electron beam radiation processing and outlines the challenges in delivering a uniform dose to cylindrical objects. In this study, HDPE pipe of 5 mm thickness of homogeneous material (40 mm outer diameter and 30 mm inner diameter) has been chosen for multi-sided irradiation under 2 MeV scanned electron beam from the ILU-6 accelerator. - Highlights: • The paper outlines the challenges in delivering uniform dose to cylindrical objects at 2 MeV industrial electron beam facility. • HDPE pipe of 40 mm outer diameter and 30 mm inner diameter has been chosen for the study. • The circumferential dose distribution inside and outside of the pipes were evaluated by using calibrated CTA dosimeter strips. • Using stack of dosimeter strips, changes in circumferential dose distribution in the annular region of the pipe was evaluated. • Optimization of multi-sided irradiation on the HDPE pipes for better dose homogeneity is reported in the paper

A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

International Nuclear Information System (INIS)

Kumar, M. Vinay; Krishnaveni, S.; Yashoda, T.; Dinesh, C. M.; Krishnakumar, K. S.; Jayashree, B.; Ramani

2015-01-01

The impact of 30MeV boron 4+ and 60MeV oxygen 8+ ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor

X irradiation of human epidermis in vitro. 2. Comparison of single 44 kV and 200 kV X irradiation

Energy Technology Data Exchange (ETDEWEB)

Wollina, U; Fueller, J; Burger, B; Hipler, C

1989-01-01

On the example of the reduction of epidermal adhesion of FITC wheat germ agglutinine (WGA) the direct membrane effect of a single X irradiation (44 kV and 220 kV) was analyzed in vitro. Human normal skin and psoriasis centres were compared. Normal skin showed no alteration of microscopically visible FITC-WGA adhesion on epidermal cells over the whole dose range. Foci of psoriasis responded to doses of /ge/ 5 Gy (44 and 220 kV) with a drastic reduction of epidermal lectin binding to lower and medium cell layers. Maximum efficacy was with 5 Gy (44 kV) or 10 Gy (220 kV). A dose elevation up to 20 Gy did not result in an increase of efficacy. Topographically the radiosensitive FITC-WGA adhesion could chiefly be seen in the dermal ridges. The findings support the impression of an increased radiosensitivity of the lesional psoriatic epidermis compared with normal skin. This is connected with an abnormal differentiation of keratinocytes in psoriasis. (author).

MeV ion irradiation induced evolution of morphological, structural and optical properties of nanostructured SnO2 thin films

International Nuclear Information System (INIS)

Mohapatra, Satyabrata; Bhardwaj, Neha; Pandey, Akhilesh

2015-01-01

Nanostructured SnO 2 thin films were prepared by carbothermal evaporation method. Morphological, structural and optical properties of the SnO 2 thin films, before and after 8 MeV Si ion irradiation to fluences varying from 1 × 10 13 to 1 × 10 15 ions cm −2 , were well characterized using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), Raman spectroscopy and photoluminescence spectroscopy (PL). XRD studies revealed the presence of SnO 2 and Sn nanoparticles in the as-deposited samples. AFM and FESEM studies on the irradiated samples revealed formation of nanoring-like structures, at a fluence of 1 × 10 15 ions cm −2 , with a central hole and circular rim consisting of nearly monodisperse SnO 2 nanoparticles. PL studies revealed strong enhancement in UV emissions upon 8 MeV Si ion irradiation. A growth mechanism underlying the formation of SnO 2 nanorings involving self-assembly of SnO 2 nanoparticles around nanoholes is tentatively proposed. (paper)

130 MeV Au ion irradiation induced dewetting on In{sub 2}Te{sub 3} thin film

Energy Technology Data Exchange (ETDEWEB)

Matheswaran, P.; Abhirami, K.M.; Gokul, B. [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Sathyamoorthy, R., E-mail: rsathya1959@gmail.com [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Prakash, Jai [Department of Chemistry, M.M.H. College, Ghaziabad 201001 (India); Asokan, K.; Kanjilal, D. [Materials Science Division, Inter University Accelerator Centre, New Delhi 110067 (India)

2012-09-01

Highlights: Black-Right-Pointing-Pointer In{sub 2}Te{sub 3} phase formed from In/Te bilayer by 130 MeV Au ion irradiation. Black-Right-Pointing-Pointer Lower fluence results mixed phases with initial state of dewetting. Black-Right-Pointing-Pointer At higher fluence, In{sub 2}Te{sub 3} phase with complete dewetting pattern is formed. Black-Right-Pointing-Pointer Thermal spike model is used to explain the inter face mixing phenomena. Black-Right-Pointing-Pointer SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 Multiplication-Sign 10{sup 13} ions/cm{sup 2}. At the higher fluence of 3 Multiplication-Sign 10{sup 13} ions/cm{sup 2}, dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

Transcriptional Response of Human Cells to Microbeam Irradiation with 2.1 MeV Alpha Particles

Science.gov (United States)

Hellweg, C. E.; Bogner, S.; Spitta, L.; Arenz, A.; Baumstark-Khan, C.; Greif, K. D.; Giesen, U.

Within the next decades an increasing number of human beings in space will be simultaneously exposed to different stimuli especially microgravity and radiation To assess the risks for humans during long-duration space missions the complex interplay of these parameters at the cellular level must be understood Cellular stress protection responses lead to increased transcription of several genes via modulation of transcription factors Activation of the Nuclear Factor kappa B NF- kappa B pathway as a possible anti-apoptotic route represents such an important cellular stress response A screening assay for detection of NF- kappa B-dependent gene activation using the destabilized variant of Enhanced Green Fluorescent Protein d2EGFP as reporter protein had been developed It consists of Human Embryonic Kidney HEK 293 Cells stably transfected with a receptor-reporter-construct carrying d2EGFP under the control of a NF- kappa B response element Clones positive for Tumor Necrosis Factor alpha TNF- alpha inducible d2EGFP expression were selected as cellular reporters Irradiation was performed either with X-rays 150 kV 19 mA at DLR Cologne or with 2 1 MeV alpha particles LET sim 160 keV mu m at PTB Braunschweig After irradiation the following biological endpoints were determined i cell survival via the colony forming ability test ii time-dependent activation of NF- kappa B dependent d2EGFP gene expression using flow cytometry iii quantitative RT-PCR

Corrosion of electron-irradiated Zr-2.5Nb and Zircaloy-2

International Nuclear Information System (INIS)

Woo, O.-T.; McDougall, G.M.; Hutcheon, R.M.; Urbanic, V.F.; Griffiths, M.; Coleman, C.E.

2000-01-01

We used 10-MeV electrons to rapidly produce radiation damage in zirconium alloys, investigated whether electrons produced the same microstructural changes as neutrons, then performed post-irradiation corrosion tests to determine whether electron-irradiated materials displayed similar corrosion behavior to neutron-irradiated materials. Two irradiations were completed using 10-MeV electrons with the beam normal to thin disks of material of 4 diameter slightly larger than the beam. The beam distribution. and disk cooling were designed to produce radial temperature and dose distributions having maxima at the disk center. A high-temperature irradiation was performed on annealed Zr-2.5Nb disks, achieving a central dose of 1.3 dpa and at a central temperature of ∼450 deg C. After irradiation, the samples contained needle-like β-Nb precipitates in the α-Zr matrix similar to those produced by neutrons. A low-temperature irradiation was performed on half-moon disks of Zr-2.5Nb and Zircaloy-2 pressure tube materials at 310 deg C central temperature and 1.3-dpa central dose. Dislocation loops were observed, again similar to those produced in neutron-irradiated materials. Some of the high-temperature electron-irradiated disks were exposed to 300 deg C moist air (saturated with D 2 O), and in separate tests, high- and low-temperature irradiated disks were corroded in 300 deg C D 2 0 (11.0 pD at room temperature) in an autoclave. Measurements of oxide thickness by Fourier Transform Infrared Reflectance (FTIR) spectroscopy showed that electron irradiation reduced the corrosion rate of Zr-2.5Nb compared with that of unirradiated material, as observed for neutron irradiation. For exposures to moist air and to D 2 O, the theoretical deuterium uptakes for the electron-irradiated materials were, respectively, about 4 times and 1.5 to 2 times those for the unirradiated materials. This is also in good agreement with results for neutron-irradiated pressure tube materials. Thus, 10-MeV

Photo-neutron yields from thin and thick targets irradiated by 2.0 GeV electrons

International Nuclear Information System (INIS)

Hee-Seock, Lee; Syuichi, Ban; Toshiya, Sanami; Kazutoshi, Takahashi; Tatsuhiko, Sato; Kazuo, Shin

2005-01-01

The photo-neutron yields from thin and thick targets irradiated by high energy electrons were studied. The photo-neutron spectra at 90 deg C relative to the incident 2.0 GeV electrons were measured by the pulsed beam time-of-flight technique using the Pilot-U plastic scintillator and the NE213 liquid scintillator with 2 inches in length and 2 inches in diameter. Targets, from low-Z element (carbon) to high-Z element (bismuth) and with thin (0.5 Xo) and thick (10 Xo) thickness, were used in this study. The differential photo-neutron yields between 2 MeV (mainly 8 MeV) and 400 MeV were obtained. The systematics was studied to make empirical yield terms for shielding application. Recently, the study of the angular distributed yields was conducted at two other observing angles, 48 deg C and 140 deg C. The photo-neutron yields between 8 MeV and 250 MeV were obtained for thick targets. The experimental data were compared with results calculated using the EGS4+PICA3 or the MCNPX 2.5d code. (authors)

Irradiation creep under 60 MeV alpha irradiation

International Nuclear Information System (INIS)

Reiley, T.C.; Shannon, R.H.; Auble, R.L.

1980-01-01

Accelerator-produced charged-particle beams have advantages over neutron irradiation for studying radiation effects in materials, the primary advantage being the ability to control precisely the experimental conditions and improve the accuracy in measuring effects of the irradiation. An apparatus has recently been built at ORNL to exploit this advantage in studying irradiation creep. These experiments employ a beam of 60 MeV alpha particles from the Oak Ridge Isochronous Cyclotron (ORIC). The experimental approach and capabilities of the apparatus are described. The damage cross section, including events associated with inelastic scattering and nuclear reactions, is estimated. The amount of helium that is introduced during the experiments through inelastic processes and through backscattering is reported. Based on the damage rate, the damage processes and the helium-to-dpa ratio, the degree to which fast reactor and fusion reactor conditions may be simulated is discussed. Recent experimental results on the irradiation creep of type 316 stainless steel are presented, and are compared to light ion results obtained elsewhere. These results include the stress and temperature dependence of the formation rate under irradiation. The results are discussed in relation to various irradiation creep mechanisms and to damage microstructure as it evolves during these experiments. (orig.)

Food Irradiation Newsletter. V. 10, no. 2

International Nuclear Information System (INIS)

1986-11-01

This issue reports the summary of the Task Force Meeting on the Use of Irradiation to Ensure Hygienic Quality of Food, convened by the International Consultative Group on Food Irradiation (ICGFI) in Vienna, July 1986. The full report of the final FAO/IAEA Research Co-ordination Meeting on Factors Influencing the Utilization of Food Irradiation, convened in Dubrovnik, Yugoslavia in June 1986, contains the conclusion of the work carried out under the Co-ordinated Research Programme in the past 5 years. A Regional Co-ordinated Research Programme for Latin America has been launched with a workshop convened on this subject in Piracicaba, Brazil, July 1986. Also featured is the summary report of the FAO/IAEA Seminar for Asia and the Pacific on the Practical Application of Food Irradiation convened in Shanghai, People's Republic of China, April 1986. The well-attended seminar reported on the progress and development of practical scale application of food irradiation in the region. A successful market testing of irradiated mangoes in Miami, Florida is also described. The outcome of this test is quite significant in view of the Chernobyl accident a few months before the tests. Tabs

Irradiation effects in polycarbonate induced by 2.1 GeV Kr ions

International Nuclear Information System (INIS)

Tian Huixian; Jin Yunfan; Zhu Zhiyong; Liu Changlong; Sun Youmei; Wang Zhiguang; Liu Jie; Chen Xiaoxi; Wang Yanbin; Hou Mingdong

2002-01-01

Polycarbonate films were irradiated with 2.1 GeV Kr ions at room temperature in vacuum and in atmosphere, respectively. The ion beam induced effects were studied by means of Fourier transform infrared (FTIR) and ultraviolet visible (UV/VIS) spectroscopies in reflective mode. FTIR measurements indicate that the main effects are bond breaking, chain scissions and bond rearrangement. The creation of alkyne is the result of bond breaking and bond rearrangement. UV/VIS measurements indicate that at wavelengths of 380, 450 and 500 nm, the normalized absorbances follow approximately a linear relationship with the energy deposited density

Corrosion of electron-irradiated Zr-2.5Nb and Zircaloy-2

Energy Technology Data Exchange (ETDEWEB)

Woo, O.-T.; McDougall, G.M.; Hutcheon, R.M.; Urbanic, V.F.; Griffiths, M.; Coleman, C.E

2000-07-01

We used 10-MeV electrons to rapidly produce radiation damage in zirconium alloys, investigated whether electrons produced the same microstructural changes as neutrons, then performed post-irradiation corrosion tests to determine whether electron-irradiated materials displayed similar corrosion behavior to neutron-irradiated materials. Two irradiations were completed using 10-MeV electrons with the beam normal to thin disks of material of 4 diameter slightly larger than the beam. The beam distribution. and disk cooling were designed to produce radial temperature and dose distributions having maxima at the disk center. A high-temperature irradiation was performed on annealed Zr-2.5Nb disks, achieving a central dose of 1.3 dpa and at a central temperature of {approx}450 deg C. After irradiation, the samples contained needle-like {beta}-Nb precipitates in the {alpha}-Zr matrix similar to those produced by neutrons. A low-temperature irradiation was performed on half-moon disks of Zr-2.5Nb and Zircaloy-2 pressure tube materials at 310 deg C central temperature and 1.3-dpa central dose. Dislocation loops were observed, again similar to those produced in neutron-irradiated materials. Some of the high-temperature electron-irradiated disks were exposed to 300 deg C moist air (saturated with D{sub 2}O), and in separate tests, high- and low-temperature irradiated disks were corroded in 300 deg C D{sub 2}0 (11.0 pD at room temperature) in an autoclave. Measurements of oxide thickness by Fourier Transform Infrared Reflectance (FTIR) spectroscopy showed that electron irradiation reduced the corrosion rate of Zr-2.5Nb compared with that of unirradiated material, as observed for neutron irradiation. For exposures to moist air and to D{sub 2}O, the theoretical deuterium uptakes for the electron-irradiated materials were, respectively, about 4 times and 1.5 to 2 times those for the unirradiated materials. This is also in good agreement with results for neutron-irradiated pressure

In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 keV ion irradiation

International Nuclear Information System (INIS)

Weber, W.J.; Yu, N.; Sickafus, K.E.

1995-05-01

This paper describes use of the in situ ion beam analysis facility developed at Los Alamos National Laboratory for the study of irradiation effects in ceramic materials. In this facility, an analytical beamline of 3 MV tandem accelerator and an irradiation bean-dine of 200 kV ion implanter are connected at 60 degrees to a common target chamber. This facility provides a fast, efficient, and quantitative measurement tool to monitor changes of composition and crystallinity of materials irradiated by 100-400 keV ions, through sequential measurement of backscattering events of MeV ions combined with ion channeling techniques. We will describe the details of the in situ ion beam analysis and ion irradiation and discuss some of the important issues and their solutions associated with the in situ experiment. These issues include (1) the selection of axial ion channeling direction for the measurement of radiation damage; (2) surface charging and charge collection for data acquisition; (3) surface sputtering during ion irradiation; (4) the effects of MeV analytical beam on the materials; and (5) the sample heating effect on ion beam analysis

Food irradiation newsletter. V. 17, no. 2

International Nuclear Information System (INIS)

1993-07-01

This issue of the Food Irradiation Newsletter includes reports of a number of activities of the Food Preservation Section of the FAO/IAEA from the final quarter of 1992 to the middle of 1993. In addition there is a summary of food irradiation activities in the USA, an excerpt from the Official Gazette of the French Republic concerning the use of ionizing radiation to treat camembert made from raw milk, and a discussion of the potential for the application of food irradiation in Russia

1.5 MeV Kr+ irradiation of polycrystalline Ge

International Nuclear Information System (INIS)

Wang, L.M.; Birtcher, R.C.; Rehn, L.E.

1990-01-01

This paper reports 1.5 MeV Kr + irradiation of polycrystalline Ge at room temperature, and subsequent annealing carried out with in situ TEM observations. After a Kr + dose of 1.2 x 10 14 ions/cm 2 , Ge in the electron transparent region was completely amorphized. Continuous irradiation of the amorphized Ge resulted in a high density of small cavities. These cavities, first observed after 7 x 10 14 ions/cm 2 with an average diameter of ∼3 nm, grew into large (∼50 nm) irregular-shaped holes, transforming the irradiated Ge into a sponge-like material after 8.5 x 10 15 ions/cm 2 . The crystallization temperature and the morphology of the crystallized Ge after annealing were found to be dependent on the Kr + dose. The sponge-like structure was retained after crystallization at ∼600 degrees C

NH (X 3 summation -, v=1--3) formation and vibrational relaxation in electron-irradiated Ar/N2/H2 mixtures

International Nuclear Information System (INIS)

Dodd, J.A.; Lipson, S.J.; Flanagan, D.J.; Blumberg, W.A.M.; Person, J.C.; Green, B.D.

1991-01-01

Measurements of the dynamics of NH(X 3 summation - , v =1--3), created in electron-irradiated N 2 /H 2 and Ar/N 2 /H 2 mixtures, have been performed. Time-resolved Fourier spectroscopy was used to observe NH(v→v--1) vibrational fundamental band emission. Time-dependent populations were then determined by spectral fitting. Subsequent kinetic fitting of these populations using a single-quantum relaxation model and a power-law dependence of k v on v yielded the following NH(v =1--3) relaxation rate constants (units of 10 -14 cm 3 s -1 ): k v=1 (N 2 )=1.2±0.5, k v=2 (N 2 )=3.8±1.5, k v=3 (N 2 )=7.5±2.5; k v=1 (Ar)=0.2±0.1, k v=2 (Ar)=0.5±0.2, k v=3 (Ar)=0.8±0.3; k v=1 (H 2 )≤50, k v=2 (H 2 )≤100, k v=3 (H 2 )≤150. In addition, the N 2 /H 2 data provided a measurement of the nascent excited vibrational state distribution resulting from the reaction N( 2 D)+H 2 →NH(X,v)+H. The ratio NH(1):NH(2):NH(3) was found to be 1.0:0.97:0.81 (±0.28 in each value). Comparison of the observed nascent distribution with that of a statistical model suggests that the ratio NH(0):NH(1)=0.47. Using this derived distribution, we find the average product level left-angle v right-angle =1.6, and the fraction of the available product energy in vibration left-angle f v right-angle =0.44

Neutron irradiation effect on the strength of jointed Ti-6Al-4V alloy

International Nuclear Information System (INIS)

Ishiyama, Shintaro; Miya, Naoyuki

2002-01-01

In order to investigate applicability of Ti alloy to large scaled structural material for fusion reactors, irradiation effect on the mechanical properties of Ti-6Al-4V alloy and its TIG welded material was investigated after neutron irradiation (temperature: 746-788K, fluence: 2.8 x 10 23 n/m 2 (>0.18 MeV). The following results were obtained. (1) Irradiated Ti alloy shows about 20-30% increase of its tensile strength and large degradation of fracture elongation, comparing with those of unirradiated Ti alloy. (2) TIG welded material behaves as Ti alloy in its tensile test, however, shows 30% increase of area reduction in 373-473K, whereas 1/2 degradation of area reduction over 600K. (3) Irradiated TIG welded material behaves heavier embrittlement than that of irradiated Ti alloy. (4) Charpy impact properties of un- and irradiated Ti alloys shift to ductile from brittle fracture and transition temperature shift, ΔT was estimated as about 100K. (5) Remarkable increase of hardness was found, especially in HAZ of TIG welded material after irradiation. (author)

U.V.-enhanced reactivation of u.v.-irradiated herpes virus by primary cultures of rat hepatocytes

International Nuclear Information System (INIS)

Zurlo, J.; Yager, J.D.

1984-01-01

Carcinogen treatment of cultured mammalian cells prior to infection with u.v.-irradiated virus results in enhanced virus survival and mutagenesis suggesting the induction of SOS-type processes. In this paper, we report the development of a primary rat hepatocyte culture system to investigate cellular responses to DNA damage which may be relevant to hepatocarcinogenesis in vivo. We have obtained data demonstrating that enhanced reactivation of u.v.-irradiated Herpes simplex virus type 1 (HSV-1) occurs in hepatocytes irradiated with u.v. Cultured hepatocytes were pretreated with u.v. at the time of enhanced DNA synthesis. These treatments caused an inhibition followed by a recovery of DNA synthesis. At various times after pretreatment, the hepatocytes were infected with control or u.v.-irradiated HSV-1 at low multiplicity, and virus survival was measured by direct plaque assay. U.v.-irradiated HSV-1 exhibited the expected two-component survival curve in control or u.v. pretreated hepatocytes. The magnitude of enhanced reactivation of HSV-1 was dependent on the u.v. dose to the hepatocytes, the time of infection following u.v. pretreatment, and the level of DNA synthesis at the time of pretreatment. These results suggest that u.v. treatment of rat hepatocytes causes the induction of SOS-type functions that may have a role in the initiation of hepatocarcinogenesis

Hardening and formation of dislocation structures in LiF crystals irradiated with MeV-GeV ions

CERN Document Server

Manika, I; Schwartz, K; Trautmann, C

2002-01-01

Material modifications of LiF crystals irradiated with Au, Pb and Bi ions of MeV to GeV energy are studied by means of microindentation measurements and dislocation etching. Above a critical irradiation fluence of 10 sup 9 ions/cm sup 2 , the microhardness can improve by a factor of 2 in the bulk and by more than 3 on the surface. Radiation-induced hardening follows the evolution of the energy loss along the ion path. Annealing experiments indicate that complex defect aggregates created in the tracks play a major role for the hardness change. Evidence for severe structural modifications is found when etching indentation impressions in highly irradiated crystals leading to similar pattern as in amorphous or micro-grained materials. Dislocation etching also reveals long-range stress fields extending far beyond the implantation zone deep into the nonirradiated crystal.

Generation of colour centres in yttria-stabilized zirconia by heavy ion irradiations in the GeV range

International Nuclear Information System (INIS)

Costantini, Jean-Marc; Beuneu, Francois; Schwartz, Kurt; Trautmann, Christina

2010-01-01

We have studied the colour centre production in yttria-stabilized zirconia (ZrO 2 :Y 3+ ) by heavy ion irradiation in the GeV range using on-line UV-visible optical absorption spectroscopy. Experiments were performed with 11.4 MeV amu -1 127 Xe, 197 Au, 208 Pb and 238 U ion irradiations at 8 K or room temperature (RT). A broad and asymmetrical absorption band peaked at a wavelength about 500 nm is recorded regardless of the irradiation parameters, in agreement with previous RT irradiations with heavy ions in the 100 MeV range. This band is de-convoluted into two broad Gaussian-shaped bands centred at photon energies about 2.4 and 3.1 eV that are respectively associated with the F + -type centres (involving a singly ionized oxygen vacancy, V O · ) and T centres (i.e. Zr 3+ in a trigonal symmetry) observed by electron paramagnetic resonance (EPR) spectroscopy. In the case of 8 K Au ion irradiation at low fluences, six bands are used at about 1.9, 2.3, 2.7, 3.1 and 4.0 eV. The three bands near 2.0-2.5 eV can be assigned to oxygen divacancies (i.e. F 2 + centres). No significant effect of the irradiation temperature is found on the widths of all absorption bands for the same ion and fluence. This is attributed to the inhomogeneous broadening arising from the static disorder due to the native charge-compensating oxygen vacancies. However, the colour centre production yield is strongly enhanced at 8 K with respect to RT. When heating irradiated samples from 8 K to RT, the extra colour centres produced at low temperature do not recover completely to the level of RT irradiation. The latter results are accounted for by an electronically driven defect recovery process.

Irradiation and annealing effects of deuteron irradiated NbTi and V3Ga multifilamentary composite wires at low temperature

International Nuclear Information System (INIS)

Seibt, E.

1975-01-01

To study the effects of low-temperature irradiation on technological type II-superconductors, NbTi and V 3 Ga multifilamentary composite wires, the critical current I/sub c/ and transition temperature T/sub c/ were measured before and after irradiation with 50-MeV deuterons at 10 and 15 0 K, respectively. While the irradiation effects on I/sub c/ and T/sub c/ of NbTi are substantially unaffected, the V 3 Ga wires undergo a reduction in I/sub c/ of about 50 percent and T/sub c/ decreases from 14.7 +- 0.1 0 K to 12.3 +- 0.1 0 K at a total deuteron flux of 2.6 x 10 17 cm -2 . Annealing experiments at room temperature and 100 0 C show only a small recovery of the superconducting properties up to 15 percent. The field dependence of the volume pinning force densities P/sub V/ was determined and the results are shown to be consistent with a qualitative dynamic pinning model

The study on the electrical resistivity of Cu/V multilayer films subjected to helium (He) ion irradiation

Science.gov (United States)

Wang, P. P.; Xu, C.; Fu, E. G.; Du, J. L.; Gao, Y.; Wang, X. J.; Qiu, Y. H.

2018-05-01

Sputtering-deposited Cu/V multilayer films with the individual layer thickness varying from 2.5 nm to 100 nm were irradiated by 1 MeV helium (He) ion at the fluence of 6 ×1016 ions ·cm-2 at room temperature. The resistivity of Cu/V multilayer films after ion irradiation was evaluated as a function of individual layer thickness at 300 K and compared with their resistivity before ion irradiation. The results show that the resistivity change before and after ion irradiation is largely determined by the interface structure, grain boundary and radiation induced defects. A model amended based on the model used in describing the resistivity of as-deposited Cu/V multilayer films was proposed to describe the resistivity of ion irradiated Cu/V multilayer films by considering the point defects induced by ion irradiation, the effect of interface absorption on defects and the effect of interface microstructure in the multilayer films.

Nanoparticle formation in H2O/N-2 and H2O/Ar mixtures under irradiation by 20 MeV protons and positive corona discharge

DEFF Research Database (Denmark)

Imanaka, M.; Tomita, S.; Kanda, S.

2010-01-01

To investigate the contribution of ions to gas nucleation, we have performed experiments on the formation of water droplets in H2O/N-2 and H2O/Ar gas mixtures by irradiation with a 20 MeV proton beam and by positive corona discharge. The size of the formed nanoparticles was measured using...

Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors

International Nuclear Information System (INIS)

Laha, P.; Banerjee, I.; Barhai, P.K.; Das, A.K.; Bhoraskar, V.N.; Mahapatra, S.K.

2012-01-01

Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /TiO 2 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole–Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al 2 O 3 /TiO 2 /n-Si metal–oxide–semiconductor capacitors have been studied. Twelve Al/Al 2 O 3 /TiO 2 /n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at ∼1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance–voltage, conductance–voltage and leakage current–voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole–Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

International Nuclear Information System (INIS)

Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

2014-01-01

Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

Observation of ZnS nanoparticles sputtered from ZnS films under 2 MeV Au irradiation

Science.gov (United States)

Kuiri, P. K.; Joseph, B.; Ghatak, J.; Lenka, H. P.; Sahu, G.; Acharya, B. S.; Mahapatra, D. P.

2006-07-01

ZnS nanoparticles have been observed on catcher foils due to 2 MeV Au ion irradiation of ZnS films thermally evaporated on Si(1 0 0) substrates. The structure and size distribution of nanoclusters collected were studied using transmission electron microscopy for irradiation fluences in the range of 1 × 10 11-1 × 10 15 ions cm -2. The nanoclusters were found to have a hexagonal wurtzite structure. Optical absorption measurements on similarly deposited ZnS on silica glass indicate the film to be also composed of hexagonal wurtzite ZnS. Based on this and available data we argue that the observed nanoparticles on the catcher foils are the results of shock waves induced emission of material chunks with the same atomic coordination as in the target.

Modification of the microstructure and electronic properties of rutile TiO_2 thin films with 79 MeV Br ion irradiation

International Nuclear Information System (INIS)

Rath, Haripriya; Dash, P.; Singh, U.P.; Avasthi, D.K.; Kanjilal, D.; Mishra, N.C.

2015-01-01

Modifications induced by 79 MeV Br ions in rutile titanium dioxide thin films, synthesized by dc magnetron sputtering are presented. Irradiations did not induce any new XRD peak corresponding to any other phase. The area and the width of the XRD peaks were considerably affected by irradiation, and peaks shifted to lower angles. But the samples retained their crystallinity at the highest fluence (1 × 10"1"3 ions cm"−"2) of irradiation even though the electronic energy loss of 79 MeV Br ions far exceeds the reported threshold value for amorphization of rutile TiO_2. Fitting of the fluence dependence of the XRD peak area to Poisson equation yielded the radius of ion tracks as 2.4 nm. Ion track radius obtained from the simulation based on the thermal spike model matches closely with that obtained from the fluence dependence of the area under XRD peaks. Williamson–Hall analysis of the XRD spectra indicated broadening and shifting of the peaks are a consequence of irradiation induced defect accumulation leading to microstrains, as was also indicated by Raman and UV–Visible absorption study.

Comments on Moessbauer-effect studies on 2-MeV proton-irradiated Nb3Sn

International Nuclear Information System (INIS)

Cox, D.E.; Sweedler, A.R.

1979-01-01

In a recent paper, Herber and Kalish have presented 119 Sn Moessbauer data for Nb 3 Sn irradiated by 2-MeV protons which they interpret in terms of a statistical distribution of site defects rather than interchange of Nb and Sn atoms. Further analysis of these data leads to the conclusion that they are in fact quite consistent with the presence of a substantial amount of radiation-induced site-exchange disorder. This is in agreement with the findings of a number of recent diffraction studies

Helium effects on irradiation dmage in V alloys

Energy Technology Data Exchange (ETDEWEB)

Doraiswamy, N.; Alexander, D. [Argonne National Lab., IL (United States)

1996-10-01

Preliminary investigations were performed on V-4Cr-4Ti samples to observe the effects of He on the irradiation induced microstructural changes by subjecting 3 mm electropolished V-4Cr-4Ti TEM disks, with and without prior He implantation, to 200 keV He irradiation at room temperature and monitoring, in-situ, the microstructural evolution as a function of total dose with an intermediate voltage electron microscope directly connected to an ion implanter. A high density of black dot defects were formed at very low doses in both He pre-implanted and unimplanted samples.

Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2015-12-15

A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

International Nuclear Information System (INIS)

Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

2008-01-01

The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

Thermoluminescence response of Ge-, Al- and Nd- doped optical fibers by 6 MeV - electron and 6 MeV - photon irradiations

International Nuclear Information System (INIS)

Hossain, I.; Moburak, A. A.; Saeed, M.A.; Wagiran, H.; Hida, N.; Yaakob, H.N.

2015-01-01

In this paper, we report the prediction of thermoluminescence responses of Neodymium-doped SiO 2 optical fibre with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MeV - electron irradiations without requirement for experimental measurements. A technique has been developed to calculate prediction of 6 MeV - electron response of Neodymium-doped SiO 2 optical fibre by observing the measured TL response of 6 MV - photon and the ratio of known measured photon/electron yield ratio distribution for Ge-doped, Al-doped optical fibre and standard TLD 100 dosimeter. The samples were kept in gelatin capsule an irradiated with 6 MV - photon at the dose range from 0.5 Gy to 4.0 Gy. Siemens model Primus 3368 linear accelerator located at Hospital Sultan Ismail, Johor Bahru has been used to deliver the photon beam to the samples. We found the average response ratio of 6 MV - photon and 6 MeV - electron in Ge-doped, Al-doped optical fibre and standard TLD-100 dosimeter are 0.83(3). Observing the measured value of 6 MV - photon irradiation this average ratio is useful to find the prediction of thermoluminescence responses by 6 MeV - electron irradiation of Neodymium-doped SiO 2 optical fibre by the requirement for experimental measurements with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MV - photon irradiations.

Hydrogen irradiation on TiO{sub 2} nano-thin films

Energy Technology Data Exchange (ETDEWEB)

Heidari, Sh.; Mohammadizadeh, M.R. [University of Tehran, Superconductivity Research Laboratory (SRL), Department of Physics, Tehran (Iran, Islamic Republic of); Mahjour-Shafiei, M. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Larijani, M.M.; Malek, M. [Science and Technology Research Institute, Agricultural, Medical and Industrial Research School, Karaj (Iran, Islamic Republic of)

2015-10-15

Titanium dioxide thin films were coated on soda-lime glass substrates using spray pyrolysis method with a thickness of 152 ± 10 nm. The films were irradiated with hydrogen ions at room temperature at various beam energies and fluences. Optimized incident beam energy and beam fluence were obtained to improve photocatalytic and hydrophilicity properties of TiO{sub 2} thin films by narrowing the band gap. Samples were characterized by scanning electron microscopy to study the surface morphology and by UV-Vis absorption spectroscopy to measure the band gap. The optical band gap of H-doped anatase TiO{sub 2} thin films irradiated with hydrogen beam with energies of 2 and 4 keV and a fluence of 10{sup 15} ions/cm{sup 2} was narrowed from 3.34 eV (before irradiation) to 3.04 and 2.92 eV (after irradiation), respectively. The irradiated sample with energy of 4 keV with a fluence of 10{sup 15} ions/cm{sup 2} has the best improvement. This is attributed to the contraction of the band gap and to the increase in surface active site. Furthermore, it was observed that photocatalytic and hydrophilicity properties of this sample were improved, as well. (orig.)

Vortex phase diagram in Bi2Sr2CaCuO8+δ with damage tracks created by 30 MeV fullerene irradiation

International Nuclear Information System (INIS)

Ishikawa, N.; Beek, C.J. van der; Dunlop, A.; Jaskierowicz, G.; Li, Ming; Kes, P.H.; Della-Negra, S.

2004-01-01

Using 30 MeV C 60 fullerene irradiation, we have produced latent tracks of diameter 20 nm and length 200 nm, near the surface of single crystalline Bi 2 Sr 2 CaCu 2 O 8+δ . A preliminary transmission electron microscopy study shows evidence for a very high density of deposited energy, and the ejection of material from the track core in very thin specimens. The latent tracks reveal themselves to be exceptionally strong pinning centers for vortices in the superconducting mixed state. Both the critical current density and magnetic irreversibility line are significantly enhanced. The irradiated crystals present salient features of the (B, T) phase diagram of vortex matter both of pristine crystals, such as the first order vortex phase transition, and the exponential Bose-glass line characteristic of heavy ion-irradiated crystals. We show that the latter is manifestly independent of the pinning potential. (author)

Tensile properties of helium-injected V-15Cr-5Ti after irradiation in EBR-II

International Nuclear Information System (INIS)

Grossbeck, M.L.; Horak, J.A.

1985-01-01

Miniature specimens of V-15Cr-5Ti were prepared in the annealed condition and with 10, 20, and 30% cold work. The annealed specimens were cyclotron injected with helium and irradiated in sodium in EBR-II. The cold-worked specimens were irradiated in EBR-II but not helium injected. The specimens were irradiated at 400, 525, 625, and 700 0 C and received a fluence of 4.1 to 5.5 x 10 26 neutrons/m 2 (E > 0.1 meV). Tensile testing revealed very significant embrittlement as a result of the neutron irradiation but a much smaller change, mostly at 400 0 C, resulting from helium injection. 5 references, 9 figures, 2 tables

Calibration of dosimeters at 80-120 keV electron irradiation

DEFF Research Database (Denmark)

Miller, A.; Helt-Hansen, J.

to calibrate thin-film dosimeters (Risø B3 and alanine films) by irradiation at the 80–120 keV electron accelerators. This calibration was compared to a 10MeV calibration, and we show that the radiation response of the dosimeter materials (the radiation chemical yield) is constant at these irradiation energies....... However, dose gradients within the dosimeters, when it is irradiated at low electron energies,mean that calibration function here will depend on both irradiation energy and the required effective point of measurement of the dosimeter. These are general effects that apply to any dosimeter that has a non...

Irradiation effects on secondary structure of protein induced by keV ions

International Nuclear Information System (INIS)

Cui, F.Z.; Lin, Y.B.; Zhang, D.M.; Tian, M.B.

2001-01-01

Protein secondary structure changes by low-energy ion irradiation are reported for the first time. The selected system is 30 keV N + irradiation on bovine serum albumin (BSA). After irradiation at increasing fluences from 1.0x10 15 to 2.5x10 16 ion/cm 2 , Fourier transform infrared spectra analysis was conducted. It was found that the secondary structures of BSA molecules were very sensitive to ion irradiation. Secondary conformations showed different trends of change during irradiation. With the increase of ion fluence from 0 to 2.5x10 16 ion/cm 2 , the fraction of α-helix and β-turns decreased from 17 to 12%, and from 40 to 31%, respectively, while that of random coil and β-sheet structure increased from 18 to 27%, and from 25 to 30%, respectively. Possible explanations for the secondary conformational changes of protein are proposed. (author)

Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

International Nuclear Information System (INIS)

Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

2011-01-01

In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

International Nuclear Information System (INIS)

Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

2008-01-01

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

Low-temperature irradiation of niobium with 15-MeV neutrons

International Nuclear Information System (INIS)

Kerchner, H.R.; Coltman, R.R. Jr.; Klabunde, C.E.; Sekula, S.T.

1978-01-01

Niobium was irradiated at 4.2 K with high energy d-Be neutrons to a fluence of 3.7x10 15 n/cm 2 . The neutrons were generated at the Oak Ridge Isochronous Cyclotron by the breakup reaction of 40-MeV deuterons in a thick Be target. The resulting neutron energy spectrum was broadly peaked near 15 MeV. The 0.012-cm-diameter wire sample (RRR=200) was situated in a uniform transverse magnetic field. The critical current, flux flow resistance, and normal state resistance were measured by using a standard four-terminal technique. The critical current density and the flux flow resistivity were observed to increase with irradiation and to decrease toward the preirradiation values with subsequent isochronal annealing between 4.2 K and 360 K. Using recent theories of flux line lattice deformation, the elementary pinning force is deduced and the result is compared to theoretical calculations. (Auth.)

Thermoluminescence of KCl:Eu2+ under ultraviolet irradiation at different temperatures

International Nuclear Information System (INIS)

Aguirre de Carcer, I.; Jaque, F.; Rowlands, A.P.; Townsend, P.D.

1998-01-01

The thermoluminescence of KCl:Eu 2+ ultraviolet irradiated samples has been studied at different temperatures with the aim of optimising its solar dosimetric characteristics. This was achieved by recording with a dosimeter -10 deg. C. Ultraviolet light (254 nm) irradiation under these conditions produces a high TL peak at 90 deg. C which is linear with exposure time over at least four orders of magnitude. The TL emission spectra of KCl:Eu 2+ under UV irradiation have been analysed to reveal component bands at 2.86 eV, 2.97 eV, 3.02 eV, 3.07 eV, 3.14 eV and 3.26 eV that corresponds to divalent europium impurity sites. The new peak at 3.26 eV (297 nm) had not reported before but it has to be considered in order to match the experimental TL emission. A model for the defect site of this new emission is discussed

Hydrogen release from irradiated vanadium alloy V-4Cr-4Ti

Energy Technology Data Exchange (ETDEWEB)

Klepikov, A.Kh. E-mail: klepikov@ietp.alma-ata.su; Romanenko, O.G.; Chikhray, Y.V.; Tazhibaeva, I.L.; Shestakov, V.P.; Longhurst, G.R. E-mail: gxl@inel.gov

2000-11-01

The present work is an attempt to obtain data concerning the influence of neutron and {gamma} irradiation upon hydrogen retention in V-4Cr-4Ti vanadium alloy. The experiments on in-pile loading of vanadium alloy specimens at the neutron flux density 10{sup 14} n/cm{sup 2} s, hydrogen pressure of 80 Pa, and temperatures of 563, 613 and 773 K were carried out using the IVG.1M reactor of the Kazakhstan National Nuclear Center. A preliminary set of loading/degassing experiments with non-irradiated material has been carried out to obtain data on hydrogen interaction with vanadium alloy. The, data presented in this work are related both to non-irradiated and irradiated samples.

Hydrogen release from irradiated vanadium alloy V-4Cr-4Ti

International Nuclear Information System (INIS)

Klepikov, A.Kh.; Romanenko, O.G.; Chikhray, Y.V.; Tazhibaeva, I.L.; Shestakov, V.P.; Longhurst, G.R.

2000-01-01

The present work is an attempt to obtain data concerning the influence of neutron and γ irradiation upon hydrogen retention in V-4Cr-4Ti vanadium alloy. The experiments on in-pile loading of vanadium alloy specimens at the neutron flux density 10 14 n/cm 2 s, hydrogen pressure of 80 Pa, and temperatures of 563, 613 and 773 K were carried out using the IVG.1M reactor of the Kazakhstan National Nuclear Center. A preliminary set of loading/degassing experiments with non-irradiated material has been carried out to obtain data on hydrogen interaction with vanadium alloy. The, data presented in this work are related both to non-irradiated and irradiated samples

Effect of deep levels of radiation-induced defects in silicon γ-irradiated Al-V-n-Si structures characteristics

International Nuclear Information System (INIS)

Buzaneva, E.V.; Vdovichenko, A.D.; Kuznetsov, G.V.; Muntyan, Yu.G.

1985-01-01

The effect of high energy γ-quanta irradiation on the mechanism of current transmission in Al-V-N-Si structures employed in Schottky barrier instruments has been investigated. Before irradiation the structures have been annealed in the nitrogen atmosphere at T=500 deg C. The samples have been γ-irradiated on the side of the metall film at T=20 deg C. The irradiation spectrum is continuous, maximum γ-quanta energy 50 MeV, medium one is 20 MeV. The integral flux of γ-quanta, PHIsub(γ) varied from 10 7 to 10 13 quantum/cm -2 . The volt-ampere and volt-farad characteristics have been measred. It is shown that variation of the main electrophysical characteristics of the Al-V-nSi structures upon γ-irradiation is due to deep levels of radiation defects arising in silicon with the energetic position Esub(c)-E=0.38-0.4 eV and Esub(v)+Esub(2)=0.23-0.25 → β, where Esub(c), Esub(v) are energies for the conduction band bottom and the valence band ceiling. In the 77-293 K temperature range the determining range the determining effect on current mission mechanism in irradiated structures is exerted by resonance electron tunnelling with participation of a level with the Esub(c)-Esub(1)=0.38-0.4 eV

Irradiation effects on plasma diagnostic components (2)

International Nuclear Information System (INIS)

Nishitani, Takeo; Sugie, Tatsuo

2002-03-01

Irradiation tests on a number of diagnostic components under fission neutrons, gamma-rays and 14 MeV neutrons have been carried out as a part of the ITER technology R and D program. UV range transmission losses of a KU-1 quartz were measured during 14 MeV neutron and 60 Co gamma-ray irradiation. Significant transmission losses were observed in the wavelength of 200-300 nm. Five kinds of ITER round robin fibers were irradiated in JMTR and the 60 Co gamma-ray irradiation facility. KS-4V, KU-H2G and F-doped fibers have a rather good radiation hardness, which might be available just outside of the vacuum vessel in ITER. Mica substrate bolometer was irradiated in JMTR up to 0.1 dpa. During the cool down phase of the first cycle all connections went open circuit. The use of gold meanders in the bolometer might be problematic in ITER. The magnetic probes were irradiated in JMTR. Drift of 10 - 40 mVs for 1000s was observed with a digital longterm integrator, however, which might be induced not only by RIEMF but also drift inside the integrator itself. ITER-relevant magnetic coil could be made with MI-cables, whose electric drift for 1000-s integration is less than 0.5 mVs. (author)

Tailoring the luminescence properties of Y_2O_3:Sm"3"+ nanophosphors by 6 MeV electron beam irradiation

International Nuclear Information System (INIS)

Sunitha, D.V.; Nagabhushana, H.; Hareesh, K.; Bhoraskar, V.N.; Dhole, S.D.

2017-01-01

Sm"3"+ (3 mol%) ions doped Y_2O_3 nanophosphors were synthesized by green synthesis route using Aloe Vera gel as fuel. The final product was irradiated by 6 MeV electron beam (E-beam) to different fluences in the range (2–10 × 10"1"3 e"− cm"−"2) and well characterized. Powder X-ray Diffractogram (PXRD) results revealed the loss of crystalline nature due to lattice disorder created during irradiation. Fourier Transform Infrared (FTIR) spectroscopic results showed absorption peaks around 688–843 cm"−"1 (Y-O bond), 1076 and 1398 cm"−"1 (C-O bond), 1505–1765 cm"−"1 and 3498 cm"−"1 (O-H bond). Scanning Electron Microscopic (SEM) images showed flake like morphological features. The Photoluminescence (PL) emission spectrum recorded at 407 nm excitation showed magnetic and electric dipole transitions at ∼569–575 ("4G_5_/_2 → "6H_5_/_2), ∼607–623 ("4G_5_/_2 → "6H_7_/_2) and ∼655–668 nm ("4G_5_/_2 → "6H_9_/_2) respectively. Thermoluminescence (TL) glow curve consists of three peaks in E-beam irradiated nanophosphors at 158, 243 and 352 °C due to creation of more number of trapping and luminescent centers. The E-beam irradiated Y_2O_3:Sm"3"+ nanophosphors showed strong PL emission with color co-ordinate values lying in the orange-red region. Therefore, this material can be potentially used as a red component in WLEDs (White LEDs). - Highlights: • Y_2O_3:Sm"3"+ nanophosphor was synthesized by solution combustion technique using Aloe Vera gel as a fuel. • Y_2O_3:Sm"3"+ nanophosphor was irradiated with 6 MeV E-beam in the fluence range 2–10 × 10"1"3e"− cm"−"2. • The size of the particle decreases and surface area increases with increase in E-beam fluence. • The E-beam irradiated Y_2O_3:Sm"3"+ nanophosphors PL intensity increases and CIE coordinate values moves towards red region indicating the potential usage of this phosphor for LED applications.

Magnetic properties of a stainless steel irradiated with 6 MeV Xe ions

Science.gov (United States)

Xu, Chaoliang; Liu, Xiangbing; Qian, Wangjie; Li, Yuanfei

2017-11-01

Specimens of austenitic stainless steel were irradiated with 6 MeV Xe ions at room temperature to 2, 7, 15 and 25 dpa. The vibrating sample magnetometer (VSM), grazing incidence X-ray diffraction (GIXRD) and positron annihilation lifetime spectroscopy (PLS) were carried out to analysis the magnetic properties and microstructural variations. The magnetic hysteresis loops indicated that higher irradiation damage causes more significant magnetization phenomenon. The equivalent saturated magnetization Mes and coercive force Hc were obtained from magnetic hysteresis loops. It is indicated that the Mes increases with irradiation damage. While Hc increases first to 2 dpa and then decreases continuously with irradiation damage. The different contributions of irradiation defects and ferrite precipitates on Mes and Hc can explain these phenomena.

Food irradiation newsletter. V. 19, no. 2

International Nuclear Information System (INIS)

1995-10-01

A number of important developments on food irradiation has been included in this issue of the Newsletter. First, the updated computerized list of clearance of irradiated food in different countries is published as a Supplement to this issue. The readers are requested to inform the Food Preservation Section of any mistakes in the list as soon as possible. Our experience with the list which was last published in 1991 showed that it has a strong demand by scientists, regulatory authorities, consumer groups and the media. The list therefore must be accurate as it is often referred to in literature

Food irradiation newsletter. V. 19, no. 2

Energy Technology Data Exchange (ETDEWEB)

NONE

1995-10-01

A number of important developments on food irradiation has been included in this issue of the Newsletter. First, the updated computerized list of clearance of irradiated food in different countries is published as a Supplement to this issue. The readers are requested to inform the Food Preservation Section of any mistakes in the list as soon as possible. Our experience with the list which was last published in 1991 showed that it has a strong demand by scientists, regulatory authorities, consumer groups and the media. The list therefore must be accurate as it is often referred to in literature.

Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

International Nuclear Information System (INIS)

Solanki, Anjana; Choudhary, Surbhi; Satsangi, Vibha R.; Shrivastav, Rohit; Dass, Sahab

2013-01-01

Highlights: ► Effect of 100 MeV Si 8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO 3 thin films was studied. ► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique. ► Optimal irradiation fluence for best PEC response was 5 × 10 11 ion cm −2 . ► Maximum photocurrent density was observed to be 0.7 mA cm −2 at 0.4 V/SCE. ► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity. -- Abstract: Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO 3 ) thin films were investigated by irradiating films with 100 MeV Si 8+ ions at different ion fluences in the range of 1 × 10 11 –2 × 10 13 ions cm −2 . BaTiO 3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm −2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO 3 film irradiated at 5 × 10 11 ions cm −2 , which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity

Study of the response of a silicon detector irradiated with 1 MeV neutrons; Etude de la reponse d`un detecteur Si irradie par des neutrons de 1 MeV

Energy Technology Data Exchange (ETDEWEB)

Roy, P [Montreal Univ., PQ (Canada). Lab. de Physique Nucleaire

1994-12-31

The author studied the response of an n-type silicon detector irradiated with 1 MeV neutrons at fluences ranging from 0.26x10{sup 13} to 11.19x10{sup 13} neutrons/cm{sup 2}. The response of the irradiated detector to {sup 241}Am alpha particles was measured. 13 refs., 7 figs.

Effect of irradiation spectrum on the microstructure of ion-irradiated Al2O3

International Nuclear Information System (INIS)

Zinkle, S.J.

1994-01-01

Polycrystalline samples of alpha-alumina have been irradiated with various ions ranging from 3.6 MeV Fe + to 1 MeV H + ions at 650 C. Cross-section transmission electron microscopy was used to investigate the depth-dependent microstructure of the irradiated specimens. The microstructure following irradiation was observed to be dependent on the irradiation spectrum. In particular, defect cluster nucleation was effectively suppressed in specimens irradiated with light ions such as 1 MeV H + ions. On the other hand, light ion irradiation tended to accelerate the growth rate of dislocation loops. The microstructural observations are discussed in terms of ionization enhanced diffusion processes

Augmentation of thermoelectric performance of VO2 thin films irradiated by 200 MeV Ag9+-ions

International Nuclear Information System (INIS)

Khan, G.R.; Kandasami, A.; Bhat, B.A.

2016-01-01

Swift Heavy Ion (SHI) irradiation with 200 MeV Ag 9+ -ion beam at ion fluences of 1E11, 5E11, 1E12, and 5E12 for tuning of electrical transport properties of VO 2 thin films fabricated by so–gel technique on alumina substrates has been demonstrated in the present paper. The point defects created by SHI irradiation modulate metal to insulator phase transition temperature, carrier concentration, carrier mobility, electrical conductivity, and Seebeck coefficient of VO 2 thin films. The structural properties of the films were characterized by XRD and Raman spectroscopy and crystallite size was found to decrease upon irradiation. The atomic force microscopy revealed that the surface roughness of specimens first decreased and then increased with increasing fluence. Both resistance as well as Seebeck coefficient measurements demonstrated that all the samples exhibit metal–insulator phase transition and the transition temperatures decreases with increasing fluence. Hall effect measurements exhibited that carrier concentration increased continuously with increasing fluence which resulted in an increase of electrical conductivity by several orders of magnitude in the insulating phase. Seebeck coefficient in insulating phase remained almost constant in spite of an increase in the electrical conductivity by several orders of magnitude making SHI irradiation an alternative stratagem for augmentation of thermoelectric performance of the materials. The carrier mobility at room temperature decreased up to the beam fluence of 5E11 and then started increasing whereas Seebeck coefficient in metallic state first increased with increasing ion beam fluence up to 5E11 and thereafter decreased. Variation of these electrical transport parameters has been explained in detail. - Highlights: • Thermoelectric properties of VO 2 thin films enhance upon SHI irradiation. • Structural properties show that crystallite size decrease upon SHI irradiation. • Metal–insulator phase

The survival effects of V79 cells irradiated with carbon ions in different let

International Nuclear Information System (INIS)

Wang Jufang; Zhou Guangming; He Jing; Li Wenjian; Li Qiang; Dang Bingrong; Li Xinglin; Weng Xiaoqiong; Xie Hongmei; Wei Zengquan; Gao Qingxiang

2001-01-01

The survival of cultured Chinese V79 hamster cells irradiated with carbon ions with different LETs were investigated. Irradiation was performed at the heavy Ion Research Facility in Lanzhou (HIRFL). Results were compared with those obtained from the experiments with γ rats and could be concluded as follows: The survival curves for carbon ions showed as straight lines and were fitted to the one-target one-hit model, but for γ rays the curves with shoulders were fitted to the multi-target one-hit model. As the LETs were 125, 200 and 700 keV/μm for carbon ions, the inactivation cross section 35, 12 and 8 μm 2 , respectively, which suggested that under the experimental conditions, the lower the LET of carbon ions, the more seriously the irradiation killed cells. In the case of 125 keV/μm, the RBEs of carbon ions at the 0.1 and 0.37 survival levels were 1.47 and 2.19 respectively

Defects in electron irradiated vitreous SiO2 probed by positron annihiliation

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Kawano, Takao; Itoh, Hisayoshi

1994-01-01

Defects in 3 MeV electron irradiated vitreous SiO 2 (v-SiO 2 ) were probed by the positron annihilation technique. For unirradiated v-SiO 2 specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author)

Irradiation damages in Ti3SiC2

International Nuclear Information System (INIS)

Nappe, J.C.; Grosseau, Ph.; Guilhot, B.; Audubert, F.; Beauvy, M.

2007-01-01

Carbides, by their remarkable properties, are considered as possible materials (fuel cans) in reactor of generation IV. Among those studied, Ti 3 SiC 2 is particularly considered because it joins both the ceramics and metals properties. Nevertheless, its behaviour under irradiation is not known. Characterizations have been carried out on samples irradiated at 75 MeV krypton ions. They have revealed that TiO 2 (formed at the surface of Ti 3 SiC 2 ) is pulverized by the irradiation and that the crystal lattice of Ti 3 SiC 2 dilates with c. (O.M.)

Swift heavy ion irradiated SnO_2 thin film sensor for efficient detection of SO_2 gas

International Nuclear Information System (INIS)

Tyagi, Punit; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

2016-01-01

Highlights: • Response of Ni"7"+ ion irradiated (100 MeV) SnO_2 film have been performed. • Effect of irradiation on the structural and optical properties of SnO_2 film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni"7"+ ion irradiated (100 MeV) and non-irradiated SnO_2 thin film sensor prepared under same conditions have been performed towards SO_2 gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO_2 thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO_2 thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO_2 thin film by Ni"7"+ ions.

Irradiation effects in UO2 and CeO2

International Nuclear Information System (INIS)

Ye, Bei; Oaks, Aaron; Kirk, Mark; Yun, Di; Chen, Wei-Ying; Holtzman, Benjamin; Stubbins, James F.

2013-01-01

Single crystal CeO 2 , as a surrogate material to UO 2 , was irradiated with 500 keV xenon ions at 800 °C while being observed using in situ transmission electron microscopy (TEM). Experimental results show the formation and growth of defect clusters including dislocation loops and cavities as a function of increasing atomic displacement dose. At high dose, the dislocation loop structure evolves into an extended dislocation line structure, which appears to remain stable to the high dose levels examined in this study. A high concentration of cavities was also present in the microstructure. Despite high atomic displacement doses, the specimen remained crystalline to a cumulated dose of 5 × 10 15 ions/cm 2 , which is consistent with the known stability of the fluorite structure under high dose irradiation. Kinetic Monte Carlo calculations show that oxygen mobility is substantially higher in hypo-stoichiometric UO 2 /CeO 2 than hyper-stoichiometric systems. This result is consistent with the ability of irradiation damage to recover even at intermediate irradiation temperatures

Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors

Energy Technology Data Exchange (ETDEWEB)

Laha, P.; Banerjee, I.; Barhai, P.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India); Das, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India); Mahapatra, S.K., E-mail: skm@physics.ucla.edu [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India)

2012-07-15

Highlights: Black-Right-Pointing-Pointer The electron irradiation effects make variation in the device parameters. Black-Right-Pointing-Pointer The device parameters changes due to percentage of defects and charge trapping. Black-Right-Pointing-Pointer Leakage current of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si changes due to interface dangling bonds. Black-Right-Pointing-Pointer The leakage current mechanism of MOS structures is due to Poole-Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si metal-oxide-semiconductor capacitors have been studied. Twelve Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at {approx}1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance-voltage, conductance-voltage and leakage current-voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole-Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

Depth distribution of 2-keV helium-ion irradiation-induced cavities in nickel

International Nuclear Information System (INIS)

Fenske, G.; Das, S.K.; Kaminsky, M.

1981-01-01

Transmission electron microscopy has been used to study the effect of total dose on the depth distribution of cavities (voids or bubbles) in nickel irradiated at 500 0 C with 20-keV 4 He + ions. A transverse sectioning technique allowed us to obtain the entire depth distribution of cavities from a single specimen. The diameter, number density and volume fraction of cavities were measured as a function of depth from micrographs taken from samples sectioned parallel to the direction of the incident beam. Results for the doses at 2.9 x 10 15 and 2.9 x 10 16 ions/cm 2 show an increase in the average cavity diameter, number density and volume fraction with increasing dose. A further increase in dose from 2.9 x 10 16 to 2.9 x 10 17 ions/cm 2 also shows an increase in the average cavity diameter but a decrease in the number density. This observation is interpreted as evidence for the coalescence of cavities. 3 figures, 1 table

Lateral propagation of MeV electrons generated by femtosecond laser irradiation

International Nuclear Information System (INIS)

Seely, J. F.; Szabo, C. I.; Audebert, P.; Brambrink, E.; Tabakhoff, E.; Hudson, L. T.

2010-01-01

The propagation of MeV electrons generated by intense (≅10 20 W/cm 2 ) femtosecond laser irradiation, in the lateral direction perpendicular to the incident laser beam, was studied using targets consisting of irradiated metal wires and neighboring spectator wires embedded in electrically conductive (aluminum) or resistive (Teflon) substrates. The K shell spectra in the energy range 40-60 keV from wires of Gd, Dy, Hf, and W were recorded by a transmission crystal spectrometer. The spectra were produced by 1s electron ionization in the irradiated wire and by energetic electron propagation through the substrate material to the spectator wire of a different metal. The electron range and energy were determined from the relative K shell emissions from the irradiated and spectator wires separated by varying substrate lateral distances of up to 1 mm. It was found that electron propagation through Teflon was inhibited, compared to aluminum, implying a relatively weak return current and incomplete space-charge neutralization. The energetic electron propagation in the direction parallel to the electric field of the laser beam was larger than perpendicular to the electric field. Energetic electron production was lower when directly irradiating aluminum or Teflon compared to irradiating the heavy metal wires. These experiments are important for the determination of the energetic electron production mechanism and for understanding lateral electron propagation that can be detrimental to fast-ignition fusion and hard x-ray backlighter radiography.

Oxidation of SO{sub 2} and formation of water droplets under irradiation of 20 MeV protons in N{sub 2}/H{sub 2}O/SO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Tomita, Shigeo [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Nakai, Yoichi, E-mail: nakaiy@riken.jp [Radioactive Isotope Physics Laboratory, RIKEN Nishina Center, Wako, Saitama 351-0198 (Japan); Funada, Shuhei; Tanikawa, Hideomi; Harayama, Isao [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Kobara, Hitomi [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8569 (Japan); Sasa, Kimikazu [Tandem Accelerator Complex, University of Tsukuba, Tsukuba, Ibaraki 305-8577 (Japan); Pedersen, Jens Olaf Pepke [National Space Institute, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Hvelplund, Preben [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)

2015-12-15

We have performed an experiment on charged droplet formation in a humidified N{sub 2} gas with trace SO{sub 2} concentration and induced by 20 MeV proton irradiation. It is thought that SO{sub 2} reacts with the chemical species, such as OH radicals, generated through the reactions triggered by N{sub 2}{sup +} production. Both droplet number and droplet size increased with SO{sub 2} consumption for the proton irradiation. The total charged droplet numbers entering the differential mobility analyzer per unit time were proportional to the 0.68 power of the SO{sub 2} consumption. These two findings suggest that coagulation among the small droplets contributes to the formation of the droplets. The charged droplet volume detected per unit time is proportional to the SO{sub 2} consumption, which indicates that a constant amount of sulfur atoms is contained in a unit volume of droplet, regardless of different droplet-size distributions depending on the SO{sub 2} consumption.

Deactivation of group III acceptors in silicon during keV electron irradiation

International Nuclear Information System (INIS)

Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

1983-01-01

Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

Irradiation effects on c-axis lattice parameter in EuBa{sub 2}Cu{sub 3}O{sub y} irradiated with energetic ions

Energy Technology Data Exchange (ETDEWEB)

Ishikawa, Norito; Chimi, Yasuhiro; Iwase, Akihiro; Maeta, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Tsuru, Koji; Michikami, Osamu

1997-03-01

We report an irradiation effect on c-axis lattice parameter in EuBa{sub 2}Cu{sub 3}O{sub y} oxide superconductors when irradiated with ions of energy ranging from 0.85 to 200 MeV. For the irradiation with low energy (0.85-2 MeV) ions, the defect production and the resultant c-axis lattice expansion were dominated by elastic collisions. On the other hand, for the irradiation with high energy (120-200 MeV) ions, the change in the c-axis lattice parameter was found to be much greater than that expected from the elastic displacement of target atoms. For high energy ion irradiation we could observe the excessive increase of c-axis lattice parameter reflecting additional production of defects which can be attributed to the electronic excitation. The large increase in c-axis lattice parameter due to high energy ion irradiation should be taken into account for the study on the interaction between vortices and irradiation-induced defects. (author)

Irradiation effects of 11 MeV protons on ferritic steels

International Nuclear Information System (INIS)

Hamaguchi, Yoshikazu; Kuwano, Hisashi; Misawa, Toshihei

1985-01-01

It is considered that ferritic/martensitic steels are the candidate of the first wall materials for future fusion reactors. The most serious problem in the candidate materials is the loss of ductility due to the elevation of ductile-brittle transition temperature by the high dpa irradiation of neutrons. 14 MeV neutrons produced by D-T reaction cause high dpa damage and also produce large quantity of helium and hydrogen atoms in first wall materials. Those gas atoms also play an important role in the embrittlement of steels. The main purpose of this work was to simulate the behavior of hydrogen produced by the transmutation in the mechanical properties of ferritic steels when they were irradiated with 11 MeV protons. The experimental procedure and the results of hardness, the broadening of x-ray diffraction lines, Moessbauer spectroscopy and small punch test are reported. High energy protons of 10 - 20 MeV are suitable to the simulation experiment of 14 MeV neutron radiation damage. But the production of the active nuclei emitting high energy gamma ray and having long life, Co-56, is the most serious problem. Another difficulty is the control of irradiation temperature. A small irradiation chamber must be developed. (Kako, I.)

Spallation and 14-MeV neutron irradiation of stabilized NbTi superconductors

International Nuclear Information System (INIS)

Hahn, P.; Brown, B.S.; Weber, H.W.; Guinan, M.W.

1983-08-01

The results on 5 K irradiation available so far may be summarized as follows. (1) Increases of j/sub c/ following neutron irradiation occur only in conductors which are far from the optimal metallurgical treatments. (2) The changes of j/sub c/ following neutron irradiation and a thermal cycle to room temperature are small and in most cases comparable to the results obtained after 77 K irradiation. (3) The data available so far indicate that the degradation of j/sub c/ at 8 T is larger by about 5 to 10% than the corresponding changes at 5 T at a neutron fluence of 1.3 x 10 22 m -2 (E > 0.1 MeV). (4) The increase of Cu-resistivity is significant even after a thermal cycle to room temperature and requires design changes for a stable magnet operation

Preliminary examination of induced radio activity in pepper by 10 MeV electron irradiation

International Nuclear Information System (INIS)

Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Toratani, Hirokazu; Takeda, Atsuhiko

1989-01-01

β-ray measurement was performed on 10 MeV electron-irradiated black pepper and white pepper in order to reconfirm the wholesomeness of irradiated food and present unambiguous data to general consumers concerning about the induced radioactivity in the irradiated foods. From elemental composition of the samples and investigation of photonuclear reactions, several β-emmitters were listed up. But no radioactivity other than from natural sources was detected in the irradiated sample by β-ray counting with 2 π gass flow counter, suggesting that the induced β-emmitters in the irradiated sample was below the detection limit of its induced radioactivity. (author)

A New Understanding of Near-Threshold Damage for 200 keV Irradiation In Silicon

International Nuclear Information System (INIS)

Stoddard, Nathan; Duscher, Gerd J.M.; Windl, Wolfgang; Rozgonyi, G.A.

2005-01-01

Recently we reported room temperature point defect creation and subsequent extended defect nucleation in nitrogen-doped silicon during 200 kV electron irradiation, while identical irradiation of nitrogen-free silicon produced no effect. In this paper, first principles calculations are combined with new transmission electron microscope (TEM) observations to support a new model for elastic electron-silicon interactions in the TEM, which encompasses both nitrogen doped and nitrogen free silicon. Specifically, the nudged elastic band method was used to study the energetics along the diffusion path during an electron collision event in the vicinity of a nitrogen pair. It was found that the 0 K estimate for the energy barrier of a knock-on event is lowered from ∼12 to 6.2 eV. However, this is still inadequate to explain the observations. We therefore propose an increase in the energy barrier for Frenkel pair recombination associated with N 2 -V bonding. Concerning pure silicon, stacking fault formation near irradiation-induced holes demonstrates the participation of bulk processes. In low oxygen float zone material, 2--5 nm voids were formed, while oxygen precipitation in Czochralski Si has been verified by electron energy-loss spectroscopy. Models of irradiation-induced point defect aggregation are presented and it is concluded that these must be bulk and not surface mediated phenomena.

Food Irradiation Newsletter. V. 13, no. 2

International Nuclear Information System (INIS)

1989-10-01

This issue contains reports of the two co-ordination meetings convened in San Jose, Costa Rica, and Bangkok, Thailand, last year. It also details questions raised by the International Organization of Consumers Unions (IOCU) on the safety of irradiated foods during the International Conference on the Acceptance, Control of and Trade in Irradiated Food, organized by FAO, IAEA, WHO, ITC-UNCTAD/GATT, Geneva, Switzerland, December 1988. The questions were answered by experts appointed by the Joint Secretariat during the Conference. Both questions and answers were documented and made available to all delegations. The WHO has recently published the official version of the documents which have been sent to all its official contact points and are reproduced in this newsletter. Refs, figs and tabs

Anisotropic deformation of metallo-dielectric core-shell colloids under MeV ion irradiation

International Nuclear Information System (INIS)

Penninkhof, J.J.; Dillen, T. van; Roorda, S.; Graf, C.; Blaaderen, A. van; Vredenberg, A.M.; Polman, A.

2006-01-01

We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO 2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks

Anisotropic deformation of metallo-dielectric core shell colloids under MeV ion irradiation

Science.gov (United States)

Penninkhof, J. J.; van Dillen, T.; Roorda, S.; Graf, C.; van Blaaderen, A.; Vredenberg, A. M.; Polman, A.

2006-01-01

We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks.

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

International Nuclear Information System (INIS)

Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

2015-01-01

The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

Experimental study on the ionizing radiation field in absorbers irradiated by the 0.8 GeV and 1.2 GeV electrons

International Nuclear Information System (INIS)

Ambrosimov, V.K.; Kalmykov, N.N.; Kovalenko, G.D.

1987-01-01

The measurement results of spatial distribution of aluminium detector energy release and radioactivity in absorbers irradiated by 0.8 and 1.2 GeV electrons are given. Absorbers are made of aluminium, iron and lead, 30x30 cm size across the thickness is about 18 radiation length units. Thermoluminescence dosimeters LiF and radiochromium film dosimeters have been used to measure energy release. Induced activity of 18 F and 24 Na nuclides is determined in aluminium detectors. The experimental data are compared with the results of calculation carried out by the Monte-Carlo method

Radiological safety research of food irradiation with 7.5 MeV X-rays

International Nuclear Information System (INIS)

Yang Bin; Tang Weidong; Zhang Yue; Xu Tao; Jin Jianqiao; Ye Mingyang

2012-01-01

China and America both have 7.5 MeV high energy X-ray accelerator. The radiological safety of food irradiated with 7.5 MeV X-rays (bremsstrahlung) has been investigated. Samples of meat and meat ash were located in a large volume of fresh meat at the position of the highest photoneutron fluence and irradiated to an X-ray dose of 15 kGy, twice the maximum dose allowed by the US FDA for meat irradiation. An evaluation of the corresponding radiation exposure from ingestion of the irradiated product has been compared to natural background radiation. The paper concludes that the risk to individuals from intake of food irradiated with X-rays from 7.5 MeV electrons, even with a broad energy spectrum, would be trivial. The common target materials are Au, Ta and W. The U.S, requires only Au and Ta can be used as food irradiation target materials and China has not yet relevant provisions. The first 7.5 MeV accelerator for food irradiation in China is under built, and will do the explore research for the choice of target material. (authors)

Robotic Stereotactic Radioablation Concomitant With Neo-Adjuvant Chemotherapy for Breast Tumors

International Nuclear Information System (INIS)

Bondiau, Pierre-Yves; Bahadoran, Phillipe; Lallement, Michel; Birtwisle-Peyrottes, Isabelle; Chapellier, Claire; Chamorey, Emmanuel; Courdi, Adel; Quielle-Roussel, Catherine; Thariat, Juliette; Ferrero, Jean-Marc

2009-01-01

Purpose: Robotic stereotactic radioablation (RSR) allows stereotactic irradiation of thoracic tumors; however, it has never been used for breast tumors and may have a real potential. We conducted a Phase I study, including neoadjuvant chemotherapy (NACT), a two-level dose-escalation study (6.5 Gy x 3 fractions and 7.5 Gy x 3 fractions) using RSR and breast-conserving surgery followed by conventional radiotherapy. Materials and Methods: To define toxicity, we performed a dermatologic exam (DE) including clinical examination by two independent observers and technical examination by colorimetry, dermoscopy, and skin ultrasound. DE was performed before NACT (DE0), at 36 days (DE1), at 56 days (DE2), after the NACT treatment onset, and before surgery (DE3). Surgery was performed 4-8 weeks after the last chemotherapy session. A pathologic examination was also performed. Results: There were two clinical complete responses and four clinical partial responses at D56 and D85. Maximum tolerable dose was not reached. All patients tolerated RSR with no fatigue; 2 patients presented with mild pain after the third fraction of the treatment. There was no significant toxicity measured with ultrasound and dermoscopy tests. Postoperative irradiation (50 Gy) has been delivered without toxicity. Conclusion: The study showed the feasibility of irradiation with RSR combined with chemotherapy and surgery for breast tumors. There was no skin toxicity at a dose of 19.5 Gy or 22.5 Gy delivered in three fractions combined with chemotherapy. Lack of toxicity suggested that the dose could be increased further. Pathologic response was acceptable.

Chapter 2: Irradiators

Energy Technology Data Exchange (ETDEWEB)

NONE

2018-04-01

The chapter 2 presents the subjects: 1) gamma irradiators which includes: Category-I gamma irradiators (self-contained); Category-II gamma irradiators (panoramic and dry storage); Category-III gamma irradiators (self-contained in water); Category-IV gamma irradiators (panoramic and wet storage); source rack for Category-IV gamma irradiators; product transport system for Category-IV gamma irradiators; radiation shield for gamma irradiators; 2) accelerators which includes: Category-I Accelerators (shielded irradiator); Category-II Accelerators (irradiator inside a shielded room); Irradiation application examples.

Proton irradiation studies on pure Ti and Ti-6Al-4V

Energy Technology Data Exchange (ETDEWEB)

Dutta Gupta, A. [Variable Energy Cyclotron Centre, HBNI, 1/AF Bidhannagar, Kolkata (India); Mukherjee, P., E-mail: paramita@vecc.gov.in [Variable Energy Cyclotron Centre, HBNI, 1/AF Bidhannagar, Kolkata (India); Gayathri, N.; Bhattacharyya, P.; Bhattacharya, M. [Variable Energy Cyclotron Centre, HBNI, 1/AF Bidhannagar, Kolkata (India); Sarkar, Apu [Materials Group, Bhabha Atomic Research Centre, Mumbai (India); Sen, S. [Mechanical Engineering, Jadavpur University, Kolkata (India); Mitra, M.K. [Metallurgical and Materials Engineering, Jadavpur University, Kolkata (India)

2016-11-15

Post irradiated microstructural characterisation of pure Ti and Ti-6Al-4V has been done as a function of dose using different model based techniques of X-ray diffraction line profile analysis. There is a systematic change of domain size for both the materials with dose but the microstrain within the domain remains almost unaltered. The domain size appears to be lower for pure Ti at all doses as compared to Ti-6Al-4V alloy. XRD peaks became highly asymmetric particularly at a dose of 5 × 10{sup 21} p/m{sup 2} for Ti-6Al-4V samples which is not observed for pure Ti at the same dose. This may be attributed to the segregation of alloying elements as a result of irradiation. Microhardness values increases with dose for pure Ti and then saturates at higher doses whereas microhardness values are found to decrease at higher doses for Ti-6Al-4V.

IV and CV curves for irradiated prototype BTeV silicon pixel sensors

International Nuclear Information System (INIS)

Coluccia, Maria R.

2002-01-01

The authors present IV and CV curves for irradiated prototype n + /n/p + silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. They tested pixel sensors from various vendors and with two pixel isolation layouts: p-stop and p-spray. Results are based on exposure with 200 MeV protons up to 6 x 10 14 protons/cm 2

Preliminary microstructural characterization by transmission electron microscopy of 14 MeV neutron irradiated type 316 stainless steel

International Nuclear Information System (INIS)

Echer, C.J.

1977-01-01

Substantial changes in the mechanical properties of 316 stainless steel were observed after neutron irradiation (phi/sub t/ = 2.3 x 10 21 n/m 2 and E = 14 MeV) at 25 0 C. Comparison of microstructures of the unirradiated and neutron irradiated materials were evaluated using transmission electron microscopy. Evidence of small defect clusters in the irradiated material was found. These findings are consistent with other investigators also evaluating low dose irradiations

Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation

International Nuclear Information System (INIS)

Nakajima, Y.; Tsuchiya, Y.; Taen, T.; Yagyuda, H.; Tamegai, T.; Okayasu, S.; Sasase, M.; Kitamura, H.; Murakami, T.

2010-01-01

We report the formation of columnar defects in Co-doped BaFe 2 As 2 single crystals with different heavy-ion irradiations. The formation of columnar defects by 200 MeV Au ion irradiation is confirmed by transmission electron microscopy and their density is about 40% of the irradiation dose. Magneto-optical imaging and bulk magnetization measurements reveal that the critical current density J c is enhanced in the 200 MeV Au and 800 MeV Xe ion irradiated samples while J c is unchanged in the 200 MeV Ni ion irradiated sample. We also find that vortex creep rates are strongly suppressed by the columnar defects. We compare the effect of heavy-ion irradiation into Co-doped BaFe 2 As 2 and cuprate superconductors.

Evaluation of induced radioactivity in 10 MeV electron-irradiated spices

Energy Technology Data Exchange (ETDEWEB)

Furuta, Masakazu; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Katayama, Tadashi; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

1993-10-01

In order to make clear appreciation to induced radioactivity in the irradiated foods, photonuclear reactions which could produce radioactivity at energies up to 10 MeV were listed up from elemental compositions of black pepper, white pepper, red pepper, ginger and turmeric. The samples were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy and radioactivity was measured. Induced radioactivity could not be detected significantly by gamma-ray spectrometry and beta-ray counting in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H[sub 50] according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from [sup 40]K contained in the samples. (J.P.N.).

MeV single-ion beam irradiation of mammalian cells using the Surrey vertical nanobeam, compared with broad proton beam and X-ray irradiations

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Jeynes, J.C.G.; Merchant, M.J.; Kirkby, K.; Kirkby, N. [Surrey Ion Beam Center, Faculty of Engineering and Physical Science, University of Surrey, Guildford Surrey, GU2 7XH (United Kingdom); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: •Recently completed nanobeam at the Surrey Ion Beam Centre was used. •3.8-MeV single and broad proton beams irradiated Chinese hamster cells. •Cell survival curves were measured and compared with 300-kV X-ray irradiation. •Single ion irradiation had a lower survival part at ultra-low dose. •It implies hypersensitivity, bystander effect and cell cycle phase of cell death. -- Abstract: As a part of a systematic study on mechanisms involved in physical cancer therapies, this work investigated response of mammalian cells to ultra-low-dose ion beam irradiation. The ion beam irradiation was performed using the recently completed nanobeam facility at the Surrey Ion Beam Centre. A scanning focused vertical ion nano-beam was applied to irradiate Chinese hamster V79 cells. The V79 cells were irradiated in two different beam modes, namely, focused single ion beam and defocused scanning broad ion beam of 3.8-MeV protons. The single ion beam was capable of irradiating a single cell with a precisely controlled number of the ions to extremely low doses. After irradiation and cell incubation, the number of surviving colonies as a function of the number of the irradiating ions was measured for the cell survival fraction curve. A lower survival for the single ion beam irradiation than that of the broad beam case implied the hypersensitivity and bystander effect. The ion-beam-induced cell survival curves were compared with that from 300-kV X-ray irradiation. Theoretical studies indicated that the cell death in single ion irradiation mainly occurred in the cell cycle phases of cell division and intervals between the cell division and the DNA replication. The success in the experiment demonstrated the Surrey vertical nanobeam successfully completed.

Surface amorphization in Al2O3 induced by swift heavy ion irradiation

International Nuclear Information System (INIS)

Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

2013-01-01

Microstructure in single crystalline Al 2 O 3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 10 13 to 1.0 × 10 15 ions/cm 2 . After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al 2 O 3 , high-density S e causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 10 13 ions/cm 2 for single crystalline Al 2 O 3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al 2 O 3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al 2 O 3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 10 14 ions/cm 2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures

Surface amorphization in Al2O3 induced by swift heavy ion irradiation

Science.gov (United States)

Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

2013-11-01

Microstructure in single crystalline Al2O3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 1013 to 1.0 × 1015 ions/cm2. After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al2O3, high-density Se causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 1013 ions/cm2 for single crystalline Al2O3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al2O3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al2O3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 1014 ions/cm2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures.

AGR-2 Irradiation Test Final As-Run Report, Rev 2

Energy Technology Data Exchange (ETDEWEB)

Collin, Blaise P. [Idaho National Lab. (INL), Idaho Falls, ID (United States)

2014-08-01

half calendar years. The test contained six independently controlled and monitored capsules. Each U.S. capsule contained 12 compacts of either UCO or UO2 AGR coated fuel. No fuel particles failed during the AGR-2 irradiation. Final burnup values on a per compact basis ranged from 7.26 to 13.15% FIMA (fissions per initial heavy-metal atom) for UCO fuel, and 9.01 to 10.69% FIMA for UO₂ fuel, while fast fluence values ranged from 1.94 to 3.47 x 10²⁵ n/m² (E >0.18 MeV) for UCO fuel, and from 3.05 to 3.53 x 10²⁵ n/m² (E >0.18 MeV) for UO₂ fuel. Time-average volume-average (TAVA) temperatures on a capsule basis at the end of irradiation ranged from 987°C in Capsule 6 to 1296°C in Capsule 2 for UCO, and from 996 to 1062°C in UO₂-fueled Capsule 3. By the end of the irradiation, all of the installed thermocouples (TCs) had failed. Fission product release-to-birth (R/B) ratios were quite low. In the UCO capsules, R/B values during the first three cycles were below 10^-6 with the exception of the hotter Capsule 2, in which the R/Bs reached 2 x 10^-6. In the UO₂ capsule (Capsule 3), the R/B values during the first three cycles were below 10^-7. R/B values for all following cycles are not reliable due to gas flow and cross talk issues.

1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

International Nuclear Information System (INIS)

Warren, C.E.; Wagner, B.F.; Anderson, W.A.

1986-01-01

The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

Rib necrosis after postoperative irradiation with 6MeV x-ray to breast cancer

Energy Technology Data Exchange (ETDEWEB)

Asakawa, H; Watarai, J; Otawa, H [Miyagi Prefectural Adult Disease Center, Natori (Japan)

1975-04-01

In order to examine quality of rays in radiation injury in the rib by high energy x-ray, radiation injury in the rib was roentgenologically followed up in the subjects that received postoperative irradiation only with 6 MeV x-ray to breast cancer. The subjects consisted of 79 patients with the age of 30 to 78 and were irradiated with 200 rads of 6 MeV x-ray 5 times a week delivered in 5 to 6 weeks postoperatively. Two fields were irradiated in a day and the total dose reached more than 5,000 rads. Roentgenologic follow up for more than 12 months revealed that rib necrosis occurred in 9 (11%) of 79 patients and that there was no relation to the age of patient. The necrosis was most likely to develop in the right second rib 10 to 23 months after the irradiation and the mean was 16 months. To the rib region where necrosis occurred, 1,880 to 2,230 ret were irradiated and the mean was 2,014 ret. There found no relation between the irradiation dose and occurrence of rib necrosis in the extent of 4,000 to 6,000 rads for tumor doses. Radiation injury in the lung was complicated in 8 (89%) of 9 patients with rib necrosis, indicating high incidence.

Defects in electron irradiated vitreous SiO[sub 2] probed by positron annihiliation

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro (Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science); Kawano, Takao (Tsukuba Univ., Ibaraki (Japan). Radioisotope Centre); Itoh, Hisayoshi (Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment)

1994-10-10

Defects in 3 MeV electron irradiated vitreous SiO[sub 2] (v-SiO[sub 2]) were probed by the positron annihilation technique. For unirradiated v-SiO[sub 2] specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author).

Irradiation damages in Ti{sub 3}SiC{sub 2}; Dommages d'irradiation dans Ti{sub 3}SiC{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Nappe, J.C.; Grosseau, Ph. [Ecole Nationale Superieure des Mines, Centre SPIN, Lab. PMMC et LPMG UMR CNRS 5148, 42 - Saint-Etienne (France); Guilhot, B. [Ecole Nationale Superieure des Mines, Centre CIS, 42 - Saint-Etienne (France); Audubert, F.; Beauvy, M. [CEA Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. d' Etudes des Combustibles; Iacconi, Ph.; Benabdesselam, M. [Nice Univ. - Sophia Antipolis, Lab. LPES-CRESA, 06 (France)

2007-07-01

Carbides, by their remarkable properties, are considered as possible materials (fuel cans) in reactor of generation IV. Among those studied, Ti{sub 3}SiC{sub 2} is particularly considered because it joins both the ceramics and metals properties. Nevertheless, its behaviour under irradiation is not known. Characterizations have been carried out on samples irradiated at 75 MeV krypton ions. They have revealed that TiO{sub 2} (formed at the surface of Ti{sub 3}SiC{sub 2}) is pulverized by the irradiation and that the crystal lattice of Ti{sub 3}SiC{sub 2} dilates with c. (O.M.)

Evaluation of induced radioactivity in 10 MeV-electron irradiated spices, (1)

International Nuclear Information System (INIS)

Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Shibata, Setsuko; Toratani, Hirokazu; Takeda, Atsuhiko.

1994-01-01

Black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electrons from a linear accelerator to a dose of 100 kGy and radioactivity was measured in order to estimate induced radioactivity in the irradiated foods. Induced radioactivity could not be detected significantly by γ-ray spectrometry in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list of photonuclear reactions which could produce radioactivity below 10 MeV. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H 50 according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from 40 K contained in the samples. (author)

Binding of T4 endonuclease V to deoxyribonucleic acid irradiated with ultraviolet light

International Nuclear Information System (INIS)

Seawell, P.C.; Simon, T.J.; Ganesan, A.K.

1980-01-01

Endonuclease V of bacteriophage T4 binds to uv-irradiated deoxyribonucleic acid (DNA) but not to unirradiated DNA. We have developed an assay to detect this binding, based on the retention of enzyme - DNA complexes on nitrocellulose filters. The amount of complex retained, ascertained by using radioactive DNA, is a measure of T4 endonuclease V activity. From our data we conclude that (1) T4 endonuclease V binds to uv-irradiated DNA but not to DNA that has been previously incised by the endonuclease, (2) equilibrium between the free and complexed form of the enzyme is attained under our reaction conditions, (3) dissociation of enzyme - DNA complexes is retarded by sodium cyanide, and (4) retention of enzyme - DNA complexes on nitrocellulose filters is enhanced by high concentrations of saline-citrate

U.V. irradiation inhibits the electrical block to polyspermy in echinoderms

International Nuclear Information System (INIS)

David, C.; Moreau, M.; Vilain, J.P.; Guerrier, P.

1985-01-01

Oocytes of the sea urchin Sphaerechinus granularis and the starfish Marthasterias glacialis have been submitted to U.V. irradiation before fertilization. This treatment significantly increased the incidence and severity of polyspermy in the sea urchin and was also found effective on starfish oocytes. These were found more resistant to damage than sea urchin eggs and U.V. irradiation did not affect either their response to the hormone l-methyladenine or the rate of elevation of the fertilization envelope, which assures the late and definitive block to polyspermy. Electrophysiological measurements performed on M. glacialis oocytes definitively demonstrate that U.V. irradiation completely inactivates voltage-dependent sodium channels, without altering the other main conductances, Cl - , K + or Ca 2+ . After such a treatment, the relative permeability of the membrane to Na + as compared to K + shifted from 0.019+-0.003 to 0.003+-0.002 and only the calcium component of the action potentials could be observed. However, a fertilization potential, preceded by small sperm induced steps, is still present in these conditions, although its peak and plateau level are greatly reduced. These new findings are discussed, which confirm the electrical nature of the fast block to polyspermy but question about the specificity of those sperm-gated channels which are supposed to trigger the fertilization potential. (author)

Effect of pepleomycin combined with irradiation on cultured Chinese hamster V79 cells

International Nuclear Information System (INIS)

Saito, Tsutomu

1983-01-01

The combined effect of pepleomycin (PEP), a bleomycin derivative, with irradiation was investigated on cultured Chinese hamster V79 cells. An additive effect was observed when PEP and irradiation were given simultaneously. A time interval between PEP (50μg/ml for one hour) and subsequent irradiation (10 Gy) increased the survival, and it became maximum when the time interval exceeded 2 hours. PEP-induced potentially lethal damage (PLD) was recovered when trysinization was delayed, and this recovery increased the survival. When PEP was given at a time interval after initial irradiation, the survival was decreased to below that following simultaneous treatment of the two modalities, and it became minimum when the time interval was 5 to 6 hours. Cells in ''G 2 -block'' induced by 10 Gy irradiation were partially synchronized, and cells in G 2 -M phase were more sensitive to PEP than those in S phase. It was considered that cells became more sensitive to PEP when they were irradiated 5 to 6 hours previously. However, cells recovery at any cell age when trypsinization was delayed. The benefit of a time interval between the two modalities was decreased by this recovery. (author)

Study of the thermal oxidation of titanium and zirconium under argon ion irradiation in the low MeV range (E = 15 MeV)

International Nuclear Information System (INIS)

Do, N.-L.

2012-01-01

We have shown that argon ion irradiation between 1 and 15 MeV produces damage on both titanium and zirconium surfaces, taking the form of accelerated oxidation and/or craterization effects, varying as a function of the projectile energy and the annealing atmosphere (temperature and pressure) simulating the environmental conditions of the fuel/cladding interface of PWR fuel rods. Using AFM, we have shown that the titanium and zirconium surface is attacked under light argon ion bombardment at high temperature (up to 500 C) in weakly oxidizing medium (under rarefied dry air pressure ranging from 5,7 10 -5 Pa to 5 10 -3 Pa) for a fixed fluence of about 5 10 14 ions.cm -2 . We observed the formation of nano-metric craters over the whole titanium surface irradiated between 2 and 9 MeV and the whole zirconium surface irradiated at 4 MeV, the characteristics of which vary depending on the temperature and the pressure. In the case of the Ar/Ti couple, the superficial damage efficiency increases when the projectile energy decreases from 9 to 2 MeV. Moreover, whereas the titanium surface seems to be transparent under the 15-MeV ion beam, the zirconium surface exhibits numerous micrometric craters surrounded by a wide halo. The crater characteristics (size and superficial density) differ significantly from that observed both in the low energy range (keV) where the energy losses are controlled by ballistic collisions (Sn) and in the high energy range (MeV - GeV) where the energy losses are controlled by electronic excitations (Se), which was not completely unexpected in this intermediate energy range for which combined Sn - Se stopping power effects are possibly foreseen. Using XPS associated to ionic sputtering, we have shown that there is an irradiation effect on thermal oxidation of titanium, enhanced under the argon ion beam between 2 and 9 MeV, and that there is also an energy effect on the oxide thickness and stoichiometry. The study conducted using Spectroscopic

Defect microstructure in copper alloys irradiated with 750 MeV protons

DEFF Research Database (Denmark)

Zinkle, S.J.; Horsewell, A.; Singh, B.N.

1994-01-01

Transmission electron microscopy (TEM) disks of pure copper and solid solution copper alloys containing 5 at% of Al, Mn, or Ni were irradiated with 750 MeV protons to damage levels between 0.4 and 2 displacements per atom (dpa) at irradiation temperatures between 60 and 200 degrees C. The defect...... significant effect on the total density of small defect clusters, but they did cause a significant decrease in the fraction of defect clusters resolvable as SFT to similar to 20 to 25%. In addition, the dislocation loop density (> 5 nm diameter) was more than an order of magnitude higher in the alloys...

Ductility loss of ion-irradiated zircaloy-2 in iodine

International Nuclear Information System (INIS)

Shimada, M.; Terasawa, M.; Yamamoto, S.; Kamei, H.; Koizumi, K.

1981-01-01

An ion bombardment simulation technique for neutron irradiation was applied to 'thick' materials to study the effect of radiation damage on the ductility change in Zircaloy-2 in an iodine environment. Specimens were prepared from actual cladding tubes and, prior to the irradiation, they were heat-treated in vacuo at 450, 580, and 700/degree/C for 2 h. Irradiation was performed by 52-MeV alpha particles up to the 0.32 displacements per atom (dpa) at 340/degree/C. Ductility loss begins to appear after 0.03 dpa irradiation, both in iodine and argon gas environments. The iodine presence resulted in ductility reduction, compared with the argon result in all irradiation dose ranges examined. The stress applied during irradiation caused ductility loss to commence at lower dosage than in the case of stress-free irradiation. These results are discussed in relation to the existing stress corrosion cracking models

Superconductivity in irradiated A-15 compounds at low fluences. I. Neutron-irradiated V3Si

International Nuclear Information System (INIS)

Viswanathan, R.; Caton, R.; Pande, C.S.

1978-01-01

The behavior of the superconducting transition temperature T/sub c/ of single-crystal and polycrystalline V 3 Si was investigated as a function of low-fluence neutron irradiation. It is found that the initial degradation of T/sub c/ is sample-dependent, some specimens showing no degradation in T/sub c/ up to a fluence of 2 x 10 18 n/cm 2 . This and many other earlier observations on low-fluence behavior are explained in terms of a recently proposed model of radiation damage in A-15 compounds

SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds

Energy Technology Data Exchange (ETDEWEB)

Rotaru, C

2004-03-15

Heavy ion irradiation was performed on a-SiO{sub 2} layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO{sub 2} is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO{sub 2} respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

2 MeV, 60 kW dual-beam type electron accelerator irradiation facility

International Nuclear Information System (INIS)

Yotsumoto, Keiichi; Kanazawa, Takao; Haruyama, Yasuyuki; Agematsu, Takashi; Mizuhashi, Kiyoshi; Sunaga, Hiromi; Washino, Masamitsu; Tamura, Naoyuki

1984-02-01

The specification of new irradiation facility which has been constructed from 1978 through 1981 as the replacement of 1st Accelerator of JAERI, TRCRE are described. The accelerator is the Cockcroft-Walton type and both vertical and horizontal accelerating tubes are arranged on a single high voltage generator. Transferring of the high voltage to the horizontal accelerating tube is performed with the high voltage changing system in the pressure vessel. The output ratings of the accelerator are 2 MV of acceleration voltage and 30 mA of beam current. By providing the dual beam system, two irradiation rooms, one for vertical and the other for horizontal beam, are independently operationable. Persons can enter the horizontal irradiation room for experimental setting even when the vertical irradiation room is in operation. The specification of the buildings, the exhaust air treatment system, the irradiation conveyor and the safety observation system are also described. (author)

Brittle-fracture potential of irradiated Zircaloy-2 pressure tubes

Science.gov (United States)

Huang, F. H.

1993-12-01

Neutron irradiation can degrade the fracture toughness of Zircaloy-2 and may cause highly irradiated reactor components of this material to fail in a brittle manner. The effects of radiation embrittlement on the structural integrity of N Reactor pressure tubes are studied by performing KIc and JIc fracture toughness testing on samples cut from the Zircaloy-2 tubes periodically removed from the reactor. A fluence of 6 × 10 25n/ m2 ( E > 1 MeV) reduced the fracture toughness of the material by 40 to 50%. The fracture toughness values appear to saturate at 260°C with fluences above 3 × 10 25n/ m2 ( E > 1 MeV), but continue to decline with increasing fluence at temperatures below 177°C. Present and previous results obtained from irradiated pressure tubes indicate that the brittle-fracture potential of Zircaloy-2 increases with decreasing temperature and increasing fluence. Fractographic examinations of the fracture surfaces of irradiated samples reveal that circumferential hydride formation significantly influenced fracture morphology by providing sites for easy crack nucleation and leaving deep cracks. However, the deep cracks created at the hydride platelets in specimens containing less than 220 ppm hydrogen are not believed to be the major cause of degradation in postirradiation fracture toughness.

H+ irradiation effect in Co-doped BaFe2As2 single crystals

International Nuclear Information System (INIS)

Nakajima, Y.; Tsuchiya, Y.; Taen, T.; Tamegai, T.; Kitamura, H.; Murakami, T.

2011-01-01

The effect of H + irradiation on the suppression of Tc in Co-doped BaFe 2 As 2 . H + irradiation introduces nonmagnetic scattering centers. Critical Scattering rate is much higher than that expected in s±-pairing scenario. We report the suppression of the critical temperature T c in single crystalline Ba(Fe 1-x Co x ) 2 As 2 at under-, optimal-, and over-doping levels by 3 MeV proton irradiation. T c decreases and residual resistivity increases monotonically with increasing the dose. The low-temperature resistivity does not show the upturn in contrast with the α-particle irradiated NdFeAs(O,F), which suggests that proton irradiation introduces nonmagnetic scattering centers. Critical scattering rates for all samples obtained by three different ways are much higher than that expected in s±-pairing scenario based on inter-band scattering due to antiferro-magnetic spin fluctuations.

Effect of 14N ion irradiation on Bi2Sr2CaCu2Oy superconductors

International Nuclear Information System (INIS)

Sharma, M.L.; Ashwini Kumar, P.K.; Sarkar, S.K.; Virdi, G.S.; Rup, R.

1993-01-01

The effect of 14 N ion irradiation on a bulk Bi 2 Sr 2 CaCu 2 O y high-T c superconducting system has been studied. The incident energy was kept at 150 keV and the irradiation dose varied between 1 x 10 11 cm -2 and 1 x 10 16 cm -2 . It has been observed that the resistive transition occurs at lower temperatures for the irradiated specimens and the width (10-90% transition) of the superconducting transition decreases. Scanning transmission electron microscopy and x-ray diffraction (XRD) studies were carried out to evaluate the change in surface microstructure and XRD peak intensities due to irradiation. The results are discussed in the light of the similarity of atomic sizes of N and O atoms. (author)

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Greenlee, Jordan D.; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D.; Specht, Petra; Dubon, Oscar D.; Luysberg, Martina; Weatherford, Todd R.

2015-01-01

Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10 14 H + /cm 2 , the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Energy Technology Data Exchange (ETDEWEB)

Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375 (United States); Specht, Petra; Dubon, Oscar D. [University of California at Berkeley, Berkeley, California 94720 (United States); Luysberg, Martina [ERC, Research Center Juelich GmbH, 52425 Juelich (Germany); Weatherford, Todd R. [Naval Postgraduate School, Monterey, California 93943 (United States)

2015-08-24

Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{sup +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.

Experimental Set-up for Irradiation of Solid H2 and D2 with Charged Particles of keV Energies

DEFF Research Database (Denmark)

Sørensen, H.

1976-01-01

crystal film thickness monitor. The target plate, which can be heated so that films are removable by evaporation, may be used both as a calorimeter and as a beam current collector. Methods for measurement of secondary electron emission coefficients were developed, and preliminary measurements were made...... with electrons and hydrogen ions. For electron bombardment, the secondary electron emission coefficient of solid deuterium was much smaller than one. It was shown possible to use the set-up to study beam desorption of very thin films. Furthermore the set-up could be used for measuring the energy......An experimental facility was built where films of solid deuterium (and hydrogen) may be made with known thickness and irradiated with pulsed beams of electrons (up to 3 keV) and light ions (up to 10 keV). Films are made on a target plate held at 2.5–3 K. Film growth rate is calibrated with a quartz...

Irradiation damage in aluminium single crystals produced by 50-keV aluminium and copper ions

DEFF Research Database (Denmark)

Henriksen, L.; Johansen, A.; Koch, J.

1968-01-01

Aluminium single crystals, thin enough to be examined by electron microscopy, have been irradiated with 50-keV aluminium and copper ions. The irradiation fluxes were in the range 1011–1014 cm−2 s−1 and the doses were from 6 × 1012 to 6 × 1014 cm−2. Irradiation along either a or a direction produces...... rows of dislocation loops all lying parallel to one particular direction. If the aluminium target is quenched from 600 °C and annealed at room temperature prior to irradiation with aluminium ions, the rows of loops are suppressed. The amount of damage observed is considerably less than would...

Microstructural changes of Y-doped V-4Cr-4Ti alloys after ion and neutron irradiation

Directory of Open Access Journals (Sweden)

H. Watanabe

2016-12-01

Full Text Available High-purity Y-doped V-4Cr-4Ti alloys (0.1–0.2wt. % Y, manufactured by the National Institute for Fusion Science (NIFS, were used for this study. Heavy-ion and fission-neutron irradiation was carried out at temperatures 673–873K. During the ion irradiation at 873K, the microstructure was controlled by the formation of Ti(C,O,N precipitates lying on the (100 plane. Y addition effectively suppressed the growth of Ti(C,O,N precipitates, especially at lower dose irradiation to up to 4 dpa. However, at higher dose levels (12.0 dpa, the number density was almost at the same levels irrespective of the presence of Y. After neutron irradiation at 873K, fine titanium oxides were also observed in all V alloys. However, smaller oxide sizes were observed in the Y-doped samples under the same irradiation conditions. The detailed analysis of EDS showed that the center of the Ti(C,O,N precipitates was mainly enriched by nitrogen. The results showed that the contribution of not only oxygen atoms picked up from the irradiation environment but also nitrogen atoms is essential to understand the microstructural evolution of V-4Cr-4Ti-Y alloys.

Swift heavy ion irradiated SnO{sub 2} thin film sensor for efficient detection of SO{sub 2} gas

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Punit; Sharma, Savita [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Department of Physics, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2016-07-15

Highlights: • Response of Ni{sup 7+} ion irradiated (100 MeV) SnO{sub 2} film have been performed. • Effect of irradiation on the structural and optical properties of SnO{sub 2} film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni{sup 7+} ion irradiated (100 MeV) and non-irradiated SnO{sub 2} thin film sensor prepared under same conditions have been performed towards SO{sub 2} gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO{sub 2} thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO{sub 2} thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO{sub 2} thin film by Ni{sup 7+} ions.

Microstructure and Nano-Hardness of 10 MeV Cl-Ion Irradiated T91 Steel

International Nuclear Information System (INIS)

Hu Jing; Wang Xianping; Gao Yunxia; Zhuang Zhong; Zhang Tao; Fang Qianfeng; Liu Changsong

2015-01-01

Hardening and elemental segregation of T91 martenstic steel irradiated by 10 MeV Cl ions to doses from 0.06 dpa to 0.83 dpa were investigated with the nanoindentation technique and transmission electron microscopy (TEM). The results demonstrated that the irradiation hardening was closely related with irradiation dose. By increasing the dose, the hardness increased rapidly at first from the initial value of 3.15 GPa before irradiation, and then tended to saturate at a value of 3.58 GPa at the highest dose of 0.83 dpa. Combined with TEM observation, the mechanism of hardening was preliminary attributed to the formation of M(Fe,Cr) 2 3C 6 carbides induced by the high energy Cl-ion irradiation. (paper)

SiO2 on silicon: behavior under heavy ion irradiation

International Nuclear Information System (INIS)

Rotaru, C.

2004-03-01

Heavy ion irradiation was performed on a-SiO 2 layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO 2 is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO 2 respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

Effect of 120 MeV 28Si9+ ion irradiation on structural and magnetic properties of NiFe2O4 and Ni0.5Zn0.5Fe2O4

Science.gov (United States)

Sharma, R.; Raghuvanshi, S.; Satalkar, M.; Kane, S. N.; Tatarchuk, T. R.; Mazaleyrat, F.

2018-05-01

NiFe2O4, Ni0.5Zn0.5Fe2O4 samples were synthesized using sol-gel auto combustion method, and irradiated by using 120 MeV 28Si9+ ion with ion fluence of 1×1012 ions/cm2. Characterization of pristine, irradiated samples were done using X-Ray Diffraction (XRD), Field Emission Scanning Microscopy (FE-SEM), Energy Dispersive X-ray Analysis (EDAX) and Vibrating Sample Magnetometer (VSM). XRD validates the single phase nature of pristine, irradiated Ni- Zn nano ferrite except for Ni ferrite (pristine, irradiated) where secondary phases of α-Fe2O3 and Ni is observed. FE- SEM images of pristine Ni, Ni-Zn ferrite show inhomogeneous nano-range particle size distribution. Presence of diamagnetic ion (Zn2+) in NiFe2O4 increases oxygen positional parameter (u 4¯3m ), experimental, theoretical saturation magnetization (Msexp., Msth.), while decreases the grain size (Ds) and coercivity (Hc). With irradiation Msexp., Msth. increases but not much change are observed in Hc. New antistructure modeling for the pristine, irradiated Ni and Ni-Zn ferrite samples was used for describing the surface active centers.

Formation of Cavities at and Away from Grain Boundaries during 600 MeV Proton Irradiation

DEFF Research Database (Denmark)

Singh, Bachu Narain; Leffers, Torben; Green, W. V.

1982-01-01

High-purity aluminium (99.9999%) was irradiated with 600 MeV protons at the Swiss Institute for Nuclear Research (SIN) with a damage rate of 3,5 x 10^-6 dpa/s. Irradiation with 600 MeV protons produces helium, hydrogen, and other impurities through mutational reactions. The irradiation experiment...

High energy (MeV) ion-irradiated π-conjugated polyaniline: Transition from insulating state to carbonized conducting state

International Nuclear Information System (INIS)

Park, S.K.; Lee, S.Y.; Lee, C.S.; Kim, H.M.; Joo, J.; Beag, Y.W.; Koh, S.K.

2004-01-01

High energy (MeV) C 2+ , F 2+ , and Cl 2+ ions were irradiated onto π-conjugated polyaniline emeraldine base (PAN-EB) samples. The energy of an ion beam was controlled to a range of 3-4.5 MeV, with the ion dosage varying from 1x10 12 to 1x10 16 ions/cm 2 . The highest dc conductivity (σ dc ) at room temperature was measured to be ∼60 S/cm for 4.5 MeV Cl 2+ ion-irradiated PAN-EB samples with a dose of 1x10 16 ions/cm 2 . We observed the transition of high energy ion-irradiated PAN-EB samples from insulating state to conducting state as a function of ion dosage based on σ dc and its temperature dependence. The characteristic peaks of the Raman spectrum of the PAN-EB samples were reduced, while the D-peak (disordered peak) and the G peak (graphitic peak) appeared as the ion dose increased. From the analysis of the D and G peaks of the Raman spectra of the systems compared to multiwalled carbon nanotubes, ion-irradiated graphites, and annealed carbon films, the number of the clusters of hexagon rings with conducting sp 2 -bonded carbons increased with ion dosage. We also observed the increase in the size of the nanocrystalline graphitic domain of the systems with increasing ion dosage. The intensity of normalized electron paramagnelic resonance signal also increased in correlation with ion dose. The results of this study demonstrate that π-conjugated pristine PAN-EB systems changed from insulating state to carbonized conducting state through high energy ion irradiation with high ion dosage

Precipitation in Zr-2.5Nb enhanced by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Cann, C. D.; So, C. B.; Styles, R. C.; Coleman, C. E.

1993-08-15

A 3.6 MeV proton irradiation of annealed Zr-2.5Nb has been performed to determine whether proton irradiation will enhance the precipitation of Nb-rich {beta}-phase precipitates within the {alpha}-grains. a transmission electron microscope examination of a foil after irradiation at 770 K for 18 h and at 720 K for 264.5 h to a total damage of 0.94 dpa revealed a fine dispersion of precipitates within the {alpha}-grains. Electron diffraction analysis of the precipitates found they have lattice plane spacings consistent with the Nb-rich {beta}-phase. This result is in agreement with the {beta}phase precipitation observed following neutron irradiation, and thus it supports the use of proton irradiation to simulate neutron-irradiation effects in Zr-2.5Nb.

Precipitation in Zr-2.5Nb enhanced by proton irradiation

International Nuclear Information System (INIS)

Cann, C.D.; So, C.B.; Styles, R.C.; Coleman, C.E.

1993-08-01

A 3.6 MeV proton irradiation of annealed Zr-2.5Nb has been performed to determine whether proton irradiation will enhance the precipitation of Nb-rich β-phase precipitates within the α-grains. a transmission electron microscope examination of a foil after irradiation at 770 K for 18 h and at 720 K for 264.5 h to a total damage of 0.94 dpa revealed a fine dispersion of precipitates within the α-grains. Electron diffraction analysis of the precipitates found they have lattice plane spacings consistent with the Nb-rich β-phase. This result is in agreement with the βphase precipitation observed following neutron irradiation, and thus it supports the use of proton irradiation to simulate neutron-irradiation effects in Zr-2.5Nb

125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

Science.gov (United States)

Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

2011-01-01

Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

Investigation of microstructure and mechanical properties of proton irradiated Zircaloy 2

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Apu, E-mail: asarkar@barc.gov.in [Mechanical Metallurgy Division, Bhabha Atomic Reserch Centre, Mumbai, 400 085 (India); Kumar, Ajay [Nuclear Physics Division, Bhabha Atomic Reserch Centre, Mumbai, 400 085 (India); Mukherjee, S.; Sharma, S.K.; Dutta, D.; Pujari, P.K. [Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Agarwal, A.; Gupta, S.K.; Singh, P. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Chakravartty, J.K. [Mechanical Metallurgy Division, Bhabha Atomic Reserch Centre, Mumbai, 400 085 (India)

2016-10-15

Samples of Zircaloy 2 have been irradiated with 4 MeV protons to two different doses. Microstructures of the unirradiated and irradiated samples have been characterized by Electron Back Scatter Diffraction (EBSD), X-ray diffraction line profile analysis (XRDLPA), Positron Annihilation Lifetime Spectroscopy (PALS) and Coincident Doppler Broadening (CDB) Spectroscopy. Tensile tests and micro hardness measurements have been carried out at room temperature to assess the changes in mechanical properties of Zircaloy 2 due to proton irradiation. The correlation of dislocation density, grain size and yield stress of the irradiated samples indicated that an increase in dislocation density due to irradiation is responsible for the change in mechanical behavior of irradiated Zircaloy.

Silicon/HfO2 interface: Effects of proton irradiation

International Nuclear Information System (INIS)

Maurya, Savita; Radhakrishna, M.

2015-01-01

Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO 2 interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation

Electron irradiation effects in YBa2Cu3O/sub 7-δ/ single crystals

International Nuclear Information System (INIS)

Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

1988-04-01

Defect structures in YBa 2 Cu 3 O/sub 7/minus/δ/ produced by electron irradiation at 300/degree/K, were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to b 152 keV and 131 keV (+- 7 keV) in directions near the a- and b-axes, respectively (b > a, both perpendicular to c, the long axis in the orthorhombic structure). During above-threshold irradiations in an electron flux of 3 x 10 18 cm/sup /minus/2/s/sup /minus/1/, extended defects were observed to form and grow to sizes of 10--50 nm over 15 minutes, in material thicknesses varying between 20 and 200 nm. Upon irradiation between the a- and b-thresholds, movement of twin plane boundaries and shrinkage of twinned volume were observed. All these findings suggest oxygen atom displacements in the basal plane with recoil energies near 20 eV. Above-threshold irradiations also show the collapse of c-axis long-range order into a planar faulted defect structure with short range order peaks at 1.2 c and 1.07 c, depending on the irradiation direction. 9 refs., 4 figs

{sup 60}Co {gamma} irradiation effects on the current-voltage (I-V) characteristics of Al/SiO{sub 2}/p-Si (MIS) Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Tataroglu, A. [Department of Physics, Faculty of Arts and Sciences, Gazi University 06500, Ankara (Turkey)]. E-mail: ademt@gazi.edu.tr; Altindal, S. [Department of Physics, Faculty of Arts and Sciences, Gazi University 06500, Ankara (Turkey); Buelbuel, M.M. [Department of Physics, Faculty of Arts and Sciences, Gazi University 06500, Ankara (Turkey)

2006-12-01

It is well known that the exposure of any semiconductor surfaces to the {sup 60}Co {gamma}-ray irradiation causes electrically active defects. To investigate the effect of {gamma}-ray irradiation dose on the electrical characteristics of metal-insulator-semiconductor (MIS) Schottky diodes, the fabricated devices were exposed to {gamma} radiation at a dose of 2.12 kGy/h. The total dose range was from 0 to 450 kGy at room temperature. The density of interface states N {sub ss} as a function of E {sub ss}-E {sub v}, the values of series resistance R {sub s} and the bias dependence of the effective barrier height {phi} {sub e} for each dose were obtained from the forward bias I-V characteristics. Experimental results show that the {gamma}-irradiation gives rise to an increase in the zero bias barrier height {phi} {sub BO}, as the ideality factor n, R {sub s} and N {sub ss} decreases with increasing radiation dose.

The development of underwater remote cutting method for the disassembling of rotary specimen rack KRR-1 and 2

Energy Technology Data Exchange (ETDEWEB)

Lee, D. K.; Jung, K. H.; Lee, K. W.; Oh, W. J. [KAERI, Taejon (Korea, Republic of); Lee, K. Y. [Korea Institute of Industrial Technology, Kwangju (Korea, Republic of)

2004-07-01

The Rotary Specimen Racks (RSRs) were highly activated and then classified intermediate level radioactive waste for the decommissioning of KRR-1anel2. The RSR can be treated as low level radioactive waste after removing stainless steel parts. To reduce the volume of intermediate level radioactive waste, underwater cutting is required to separate stainless steel parts from RSR because of high radioactivity. In this study, the automatic remote cutting method was developed to disassemble RSR under water. For automatic remote cutting processes, a CAM (Computer Aided Manufacturing) system is employed. A computer inputs NC (Numerical Control) codes to the controller, which are based on CAM model, and the controller instructs the equipment to process according to NC codes automatically. And the cutting force model was improved to cut RSR stably. The automatic cutting was conducted using imitation of RSR and then it was resulted that the developed automatic cutting method can be safely disassemble stainless steel parts of RSR under water.

Tensile properties and microstructure of helium-injected and reactor-irradiated V-20 Ti

International Nuclear Information System (INIS)

Tanaka, M.P.; Bloom, E.E.; Horak, J.A.

1981-01-01

Mechanical properties and microstructure of vanadium-20% titanium were examined following helium-injection and reactor irradiation. Helium was injected at ambient temperature to concentrations of 90 and 200 at. ppM; neutron irradiation was at 400, 575, 625, and 700 0 C to fluence of 3 x 10 26 n/m 2 , E > 0.1 MeV. Cavities representing negligible volume swelling were observed in all helium-injected specimens. Degradation of mechanical properties, especially loss of ductility due to helium, occurred at temperatures of 625 and 700 0 C. The levels of helium produced in the fusion spectrum can be expected to alter the response of vanadium alloys from that observed in fast reactor irradiations

Tensile properties and microstructure of helium-injected and reactor-irradiated V-20 Ti

Energy Technology Data Exchange (ETDEWEB)

Tanaka, M.P.; Bloom, E.E.; Horak, J.A.

1981-01-01

Mechanical properties and microstructure of vanadium-20% titanium were examined following helium-injection and reactor irradiation. Helium was injected at ambient temperature to concentrations of 90 and 200 at. ppM; neutron irradiation was at 400, 575, 625, and 700/sup 0/C to fluence of 3 x 10/sup 26/ n/m/sup 2/, E > 0.1 MeV. Cavities representing negligible volume swelling were observed in all helium-injected specimens. Degradation of mechanical properties, especially loss of ductility due to helium, occurred at temperatures of 625 and 700/sup 0/C. The levels of helium produced in the fusion spectrum can be expected to alter the response of vanadium alloys from that observed in fast reactor irradiations.

The gas bubbles distribution in 600 MeV protons irradiated aluminium

International Nuclear Information System (INIS)

Gavillet, D.; Martin, J.L.; Victoria, M.; Green, W.

1984-01-01

In order to simulate the damage produced by 14 MeV fusion neutrons, thin foils of high purity Al have been irradiated by a proton beam of 580 MeV (120μA). After irradiation at temperatures higher than 0.5 Tm transmission electron microscope observations of gas bubbles distribution were performed. At 200 0 C a uniform distribution of bubbles has been observed inside the grain. The average distance between bubbles and their density have been determined. The gas pressure inside the bubbles has been estimated [fr

Irradiation effects on Fe distributions in zircaloy-2 and Zr-2.5Nb

International Nuclear Information System (INIS)

Zou, H.; Hood, G.M.; Roy, J.A.

1995-03-01

Irradiation of large-grained Zr-2.5Nb (ZN) and Zircaloy-2 (Zy) with 1.5 MeV Ar ions to a fluence of ∼ 10 20 /m 2 (≡ 10 dpa) at 50, 300 and 420 deg C leads to enhanced α-phase Fe levels of 250-1500 ppma, compared to equivalent non-irradiated state values of ∼ 70 ppma. In ZN the β-phase Fe levels fell from about 6000 to 3500 ppma: this result accords, qualitatively, with the loss of Fe from the β-phase following in-service neutron irradiation. Measurements on Zy showed that the Fe concentrations were higher near the specimen surfaces. Limited data for Ni distributions in Zy show similar (to Fe) behaviour. (author). 18 refs., 2 tabs

Anisotropic expansion and amorphization of Ga{sub 2}O{sub 3} irradiated with 946 MeV Au ions

Energy Technology Data Exchange (ETDEWEB)

Tracy, Cameron L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Lang, Maik [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Severin, Daniel; Bender, Markus [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Trautmann, Christina [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Ewing, Rodney C. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States)

2016-05-01

The structural response of β-Ga{sub 2}O{sub 3} to irradiation-induced electronic excitation was investigated. A polycrystalline pellet of this material was irradiated with 946 MeV Au ions and the resulting structural modifications were characterized using in situ X-ray diffraction analysis at various ion fluences, up to 1 × 10{sup 13} cm{sup −2}. Amorphization was induced, with the accumulation of the amorphous phase following a single-impact mechanism in which each ion produces an amorphous ion track along its path. Concurrent with this phase transformation, an increase in the unit cell volume of the material was observed and quantified using Rietveld refinement. This unit cell expansion increased as a function of ion fluence before saturating at 1.8%. This effect is attributed to the generation of defects in an ion track shell region surrounding the amorphous track cores. The unit cell parameter increase was highly anisotropic, with no observed expansion in the [0 1 0] direction. This may be due to the structure of β-Ga{sub 2}O{sub 3}, which exhibits empty channels of connected interstitial sites oriented in this direction.

Thermoluminescence spectra of natural CaF2 irradiated by 10MeV electrons

International Nuclear Information System (INIS)

Manrique, J.; Angulo, S.; Pardo, M.P.; Gastesi, R.; De la Cruz, A.; Perez, A.

2006-01-01

The spectra of thermoluminescence from natural and electron-irradiated fluorite in the 350-800nm spectral range were studied between room temperature and 500 o C. The sample came from Asturias (Spain) and was analyzed by X-ray diffractometry and inductively coupled plasma-mass spectrometry. Glow peaks appeared at 115, 205 and 310 o C. Main emissions occurred at 475, 575, 650 and 745nm, attributed to the Dy +3 ion and, at 410nm, from electron-hole recombination. The fractional glow technique and the general order model were employed to study the emission at 575nm in detail. The results showed that the 115 and 205 o C glow peaks originate at traps with activation energies of 1.6 and 1.9eV, respectively, on the kinetic order of 1.5 and 1.3 and frequency factors of 1.7x10 19 and 2.7x10 19 s -1 , respectively. Spectrally resolved fading produced by storage was observed, and we concluded that the emission was due to large defect complexes. The dosimetric study showed that there was saturation at doses higher than 2kGy

Tensile properties of several 800 MeV proton-irradiated bcc metals and alloys

International Nuclear Information System (INIS)

Brown, R.D.; Wechsler, M.S.; Tschalar, C.

1987-01-01

A spallation neutron source for the 600-MeV proton accelerator facility at the Swiss Institute for Nuclear Research (SIN) consists of a vertical cylinder filled with molten Pb-Bi. The proton beam enters the cylinder, passing upward through a window in contact with the Pb-Bi eutectic liquid that must retain reasonable strength and ductility upon irradiation at about 673 K to fluence of about 1 x 10/sup 25/ protons/m/sup 2/. Investigations are underway at the 800-MeV proton accelerator at the Los Alamos Meson Physics Facility (LAMPF) to test the performance of candidate SIN window materials under appropriate conditions of temperature, irradiation, and environment. Based on considerations of chemical compatibility with molten Pb-Bi, as well as interest in identifying fundamental radiation damage mechanisms, Fe, Ta, Fe-2.25Cr-1Mo, and Fe-12Cr-1Mo(HT-9) were chosen as candidate materials. Sheet tensile samples, 0.5-mm thick, of the four materials were fabricated and heat treated. The samples were sealed inside capsules containing Pb-Bi and were proton-irradiated at LAMPF to two fluences, 4.8 and 54 x 10/sup 23/ p/m/sup 2/. The beam current was approximately equal to the 1 mA anticipated for the upgraded SIN accelerator. The power deposited by the proton beam in the capsules was sufficient to maintain sample temperatures of about 673 K. Post-irradiation tensile tests were conducted at room temperature at a strain rate of 9 x 10/sup -4/s/sup -1/. The yield and ultimate strengths increased upon irradiation in all materials, while the ductility decreased, as indicated by the uniform strain. The pure metals, Ta and Fe, exhibited the greatest radiation hardening and embrittlement. The HT-9 alloy showed the smallest changes in strength and ductility. The increase in strength following irradiation is discussed in terms of a dispersed-barrier hardening model, for which the barrier sizes and formation cross sections are calculated

Preliminary examination of induced radioactivity in pepper by 10 MeV electron irradiation

International Nuclear Information System (INIS)

Katayama, Tadashi; Furuta, Masakazu; Sibata, Setsuko; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Toratani, Hirokazu; Takeda, Atsuhiko.

1991-01-01

β-ray measurement was performed on 10 MeV electron-irradiated black pepper and white pepper with liquid scintillation counter in order to reconfirm the wholesomeness of irradiated foods and present unambiguous data to general consumers concerning about the induced radioactivity in the irradiated foods. In irradiated black pepper no radioactivity other than from natural source, un-irradiated one, was detected. But in irradiated white pepper, it was suggested that induced radioactivity might be detected if the detection method was more improved. (author)

Structural and electrical properties of polycrystalline CdSe thin films, before and after irradiation with 6 MeV accelerated electrons

International Nuclear Information System (INIS)

Ion, L.; Antohe, V.A.; Tazlaoanu, C.; Antohe, S.; Scarlat, F.

2004-01-01

Structural and electrical properties of polycrystalline CdSe thin films irradiated with high-energy electrons are analyzed. The samples were prepared by vacuum deposition of CdSe powder onto optical glass substrate. Their structure and the temperature dependence of the electrical resistance were determined, both before and after irradiation with 6 MeV electrons at fluencies up to 10 16 electrons/cm 2 . There were no measurable changes in the crystalline structure of the films after irradiation. Electrical properties are controlled by the defect level of donor type, possibly a selenium vacancy, with two ionizing states having ionization energies of about 0.40 eV and 0.22 eV, respectively. The major effect of the irradiation is to increase significantly the concentration of these defects. (authors)

Dose response of thin-film dosimeters irradiated with 80-120 keV electrons

DEFF Research Database (Denmark)

Helt-Hansen, J.; Miller, A.; Sharpe, P.

2005-01-01

Thin-film dosimeters (Riso B3 and alanine films) were irradiated at 10 MeV and 80-120 keV electron accelerators, and it has been shown that the radiation response of the dosimeter materials (the radiation chemical yields) are constant at these irradiation energies. However, dose gradients within ...... are present within the dosimeter. (C) 2005 Elsevier Ltd. All rights reserved....

Neutron irradiation damage in Al2O3 and Y2O3

International Nuclear Information System (INIS)

Clinard, F.W. Jr.; Bunch, J.M.; Ranken, W.A.

1975-01-01

Two ceramics under consideration for use in fusion reactors, Al 2 O 3 and Y 2 O 3 , were irradiated in the EBR-II fission reactor at 650, 875, and 1025 0 K to fluences between 2 and 6 x 10 21 n/cm 2 (E greater than 0.1 MeV). Samples evaluated include sapphire, Lucalox, alumina, Y 2 O 3 , and Y 2 O 3 -10 percent ZrO 2 (Yttralox). All Al 2 O 3 specimens swelled significantly (1 to 3 percent), with most of the growth observed in sapphire along the c-axis at the higher temperatures. Al 2 O 3 samples irradiated at 875 to 1025 0 K contained a high density of small aligned ''pores''. Irradiated Y 2 O 3 -based ceramics exhibited dimensional stability and a defect content consisting primarily of unresolved damage and/or dislocation loops. The behavior of these ceramics under irradiation is discussed, and the relevance of fission neutron damage studies to fusion reactor applications is considered. (auth)

Defects in SiO2 crystals after neutron irradiations at 20 K and 360 K

International Nuclear Information System (INIS)

Nakagawa, M.; Okada, M.; Kawabata, Y.; Atobe, K.; Itoh, H.; Nakanishi, S.

1994-01-01

The synthetic silicon dioxide (SiO 2 ), cut parallel (x-plate) or perpendicular (z-plate) to c-axis, are irradiated by reactor neutrons at 360 K (2.8x10 18 n/cm 2 ) or at 20 K (8.0x10 16 n/cm 2 ). After neutron irradiation at 360 K, the main absorption peak can be observed at 212 nm (5.84 eV) for z-plate and 217 nm (5.71 eV) for x-plate. After irradiation at 20 K a new band at 250 nm (4.96 eV) can be observed in addition to the band at about 220 nm. The 250 nm band having FWHM similar 0.44 eV disappears at 300-340 K. Thermoluminescences are also observed between 80 to 400 K; which show some difference between x-plate and z-plate. ((orig.))

Mechanical properties of irradiated 9Cr-2WVTa steel

International Nuclear Information System (INIS)

Klueh, R.L.; Alexander, D.J.; Rieth, M.

1998-01-01

An Fe-9Cr-2W-0.25V-0.07Ta-0.1C (9Cr-2WVTa) steel has excellent strength and impact toughness before and after irradiation in the Fast Flux Test Facility and the High Flux Reactor (HFR). The ductile-brittle transition temperature (DBTT) increased only 32 C after 28 dpa at 365 C in FFTF, compared to a shift of ∼60 C for a 9Cr-2WV steel--the same as the 9Cr-2WVTa steel but without tantalum. This difference occurred despite the two steels having similar tensile but without tantalum. This difference occurred despite the two steels having similar tensile properties before and after irradiation. The 9Cr-2WVTa steel has a smaller prior-austenite grain size, but otherwise microstructures are similar before irradiation and show similar changes during irradiation. The irradiation behavior of the 9Cr-2WVTa steel differs from the 9Cr-2WV steel and other similar steels in two ways: (1) the shift in DBTT of the 9Cr-2WVTa steel irradiated in FFTF does not saturate with fluence by ∼28 dpa, whereas for the 9Cr-2WV steel and most similar steels, saturation occurs at <10 dpa, and (2) the shift in DBTT for 9Cr-2WVTa steel irradiated in FFTF and HFR increased with irradiation temperature, whereas it decreased for the 9Cr-2WV steel, as it does for most similar steels. The improved properties of the 9Cr-2WVTa steel and the differences with other steels were attributed to tantalum in solution

A 20 keV electron gun system for the electron irradiation experiments

International Nuclear Information System (INIS)

Mahapatra, S.K.; Dhole, S.D.; Bhoraskar, V.N.

2005-01-01

An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 μA. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure ∼10 -7 mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours

A 20 keV electron gun system for the electron irradiation experiments

Energy Technology Data Exchange (ETDEWEB)

Mahapatra, S.K. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411007 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India)]. E-mail: vnb@physics.unipune.ernet.in

2005-01-01

An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 {mu}A. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure {approx}10{sup -7} mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours.

Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

Science.gov (United States)

Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A. C.; Montgomery, P.

2012-05-01

A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 1012 to 3.5 × 1015 cm-2. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ˜5 × 1013 He+ cm-2. The carbon depletion levels off at a fluence of ˜5 × 1014 He+ cm-2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10-16 cm2, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He+ beam is made.

Rat mammary-cell survival following irradiation with 14.3-MeV neutrons

International Nuclear Information System (INIS)

Mahler, P.A.; Gould, M.N.; DeLuca, P.M. Jr.; Pearson, D.W.; Clifton, K.H.

1982-01-01

The survival of rat mammary gland cells irradiated in situ with either single or split doses of 14.3-MeV neutrons was determined by an in vivo transplantation assay. The single-dose data are best fit to the multitarget single-hit model by the parameters D 0 = 97 cGy and n = 0.6 while the split-dose data are best fit by the parameters D 0 = 100 cGy and n = 1.2. Analysis of the combined data sets suggests that the two survival curves are not identical. Comparison of these data with previously published results following irradiation with 250-kVp x-rays is reported

Rat mammary cell survival following irradiation with 14.3-MeV neutrons

International Nuclear Information System (INIS)

Mahler, P.A.; Gould, M.N.; DeLuca, P.M. Jr.; Pearson, D.W.; Clifton, K.H.

1982-01-01

The survival of rat mammary gland cells irradiated in situ with either single or split doses of 14.3-MeV neutrons was determined by an in vivo transplantation assay. The single-dose data are best fit to the multitarget single-hit model by the parameters D/sub o/ = 97 cGy and n = 0.6 while the split-dose data are best fit by the parameters D/sub o/ = 100 cGy and n = 1.2.Analysis of the combined data sets suggests that the two survival curves are not identical. Comparison of these data with previously published results following irradiation with 250-kVp X rays is reported

7.5 MeV High Average Power Linear Accelerator System for Food Irradiation Applications

International Nuclear Information System (INIS)

Eichenberger, Carl; Palmer, Dennis; Wong, Sik-Lam; Robison, Greg; Miller, Bruce; Shimer, Daniel

2005-09-01

In December 2004 the US Food and Drug Administration (FDA) approved the use of 7.5 MeV X-rays for irradiation of food products. The increased efficiency for treatment at 7.5 MeV (versus the previous maximum allowable X-ray energy of 5 MeV) will have a significant impact on processing rates and, therefore, reduce the per-package cost of irradiation using X-rays. Titan Pulse Sciences Division is developing a new food irradiation system based on this ruling. The irradiation system incorporates a 7.5 MeV electron linear accelerator (linac) that is capable of 100 kW average power. A tantalum converter is positioned close to the exit window of the scan horn. The linac is an RF standing waveguide structure based on a 5 MeV accelerator that is used for X-ray processing of food products. The linac is powered by a 1300 MHz (L-Band) klystron tube. The electrical drive for the klystron is a solid state modulator that uses inductive energy store and solid-state opening switches. The system is designed to operate 7000 hours per year. Keywords: Rf Accelerator, Solid state modulator, X-ray processing

Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

Science.gov (United States)

Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

2018-05-01

The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

Revised ANL-reported tensile data for unirradiated and irradiated (FFTF, HFIR) V-Ti and V-Cr-Ti alloys

International Nuclear Information System (INIS)

Billone, M.C.

1998-01-01

The tensile data for all unirradiated and irradiated vanadium alloys samples tested at Argonne National Laboratory (ANL) have been critically reviewed and, when necessary, revised. The review and revision are based on reanalyzing the original load-displacement strip chart recordings by a methodology consistent with current ASTM standards. For unirradiated alloys (162 samples), the revised values differ from the previous values as follows: -11±19 MPa (-4±6%) for yield strength (YS), -3±15 MPa (-1±3%) for ultimate tensile strength (UTS), -5±2% strain for uniform elongation (UE), and -4±2% strain for total elongation (TE). Of these changes, the decrease in -1±6 MPa (0±1%) for UTS, -5±2% for UE, and -4±2% for TE. Of these changes, the decrease in UE values for alloys irradiated and tested at 400--435 C is the most significant. This decrease results from the proper subtraction of nongauge-length deformation from measured crosshead deformation. In previous analysis of the tensile curves, the nongauge-length deformation was not correctly determined and subtracted from the crosshead displacement. The previously reported and revised tensile values for unirradiated alloys (20--700 C) are tabulated in Appendix A. The revised tensile values for the FFTF-irradiated (400--600 C) and HFIR-irradiated (400 C) alloys are tabulated in Appendix B, along with the neutron damage and helium levels. Appendix C compares the revised values to the previously reported values for irradiated alloys. Appendix D contains previous and revised values for the tensile properties of unirradiated V-5Cr-5Ti (BL-63) alloy exposed to oxygen

Irradiation-induced amorphization of Cd2Nb2O7 pyrochlore

International Nuclear Information System (INIS)

Meldrum, A.; White, C. W.; Keppens, V.; Boatner, L. A.; Ewing, R. C.

2001-01-01

Several investigations have recently been undertaken in order to achieve a more complete understanding of the radiation-damage mechanisms in A 2 B 2 O 7 pyrochlore-structure compounds. The present work represents the first systematic study of the irradiation-induced amorphization of a pyrochlore with A- and B-site cation valences of +2 and +5, respectively. Relatively large single crystals of Cd 2 Nb 2 O 7 were grown for these experiments. In situ ion-irradiation experiments were carried out in a transmission electron microscope in conjunction with ex situ Rutherford backscattering measurements of ion-irradiated Cd 2 Nb 2 O 7 single crystals. Cd 2 Nb 2 O 7 can be amorphized in situ by Ne or Xe ions at temperatures up to 480 and 620 K, respectively. At room temperature, the amorphization fluence was 36 times higher for 280 keV Ne + than for 1200 keV Xe 2+ , corresponding to a displacement dose that was higher by a factor of 3. Disordering of Cd and Nb over the available cation sites occurs at intermediate ion doses prior to amorphization. The temperature dependence of the amorphization dose is modeled, and the results are compared to those of a previous model. The bulk-sample Rutherford backscattering spectroscopy (RBS) results were generally consistent with the in situ TEM measurements. Effects of crystallographic orientation and ion charge state had relatively little effect on the damage accumulation in bulk crystals. The RBS data are consistent with a defect-accumulation, cascade-overlap model of amorphization of Cd 2 Nb 2 O 7 , as are the in situ TEM observations

MnV2O6.V2O5 cross-like nanobelt arrays: synthesis, characterization and photocatalytic properties

International Nuclear Information System (INIS)

Abbood, Hayder A.; Ahmed, Khalid Abdelazez Mohamed; Ren, Yong; Huang, Kaixun

2013-01-01

Single-crystalline MnV 2 O 6 .V 2 O 5 cross-like nanobelt arrays were successfully synthesized by hydrothermal reaction. The products were characterized by X-ray diffraction, transmission electron microscopy and high-resolution transmission electron microscopy. The effects of the reaction conditions such as pH, V 5+ /Mn 2+ ratio, carboxymethyl cellulose concentration and reaction time on the morphology of the products were studied. The band gap of the as-prepared products was calculated via diffuse reflectance spectral analysis and their activity of photocatalytic oxidation was evaluated by photodegradation of methylene blue under visible-light irradiation. The results showed that the degradation efficiency of methylene blue catalyzed by the calcinated products is remarkably enhanced due to Mn doping, suggesting that MnV 2 O 6 .V 2 O 5 cross-like nanobelt arrays are a good candidate for visible-light-driven photocatalysts. (orig.)

Effect of pulsed dose in simultaneous and sequential irradiation of V-79 cells by 14.8-MeV neutrons and 60Co photons

International Nuclear Information System (INIS)

Higgins, P.D.; DeLuca, P.M. Jr.; Gould, M.N.

1984-01-01

The effect of irradiating V-79 Chinese hamster cells with a mixture of 40% 14.8-MeV neutrons and 60% 69 Co photons with simultaneous or sequential exposures is investigated. Sample doses are obtained by irradiating cells with alternating 3-min pulses of neutrons and photons (in the sequential case) or with mixed neutrons and photons followed by equal beam-off periods to ensure equal total exposure times for sequential and simultaneous irradiations. Differences between the survival results under each beam configuration that are consistent with previous observations with nonpulsed irradiations are observed

A study on 100 MeV O{sup 7+} irradiated SnO{sub 2}/Ag/SnO{sub 2} multilayer as transparent electrode for flat panel display application

Energy Technology Data Exchange (ETDEWEB)

Sharma, Vikas [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Singh, Satyavir, E-mail: satyavir84@gmail.com [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Asokan, K. [Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067 (India); Sachdev, Kanupriya [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 India (India)

2016-07-15

The multilayer thin films of SnO{sub 2}/Ag/SnO{sub 2} were deposited using electron-beam and thermal evaporation for flat panel display application. The as-prepared SnO{sub 2}/Ag/SnO{sub 2} specimen was irradiated with 100 MeV O{sup 7+} ions by varying the fluences 1 × 10{sup 12} and 5 × 10{sup 12} ions/cm{sup 2}. The pristine and irradiated films were investigated using XRD, SEM, AFM and Raman to find out modification in the structure and surface morphology of the films. UV–Vis and Hall measurement techniques were used to investigate the optical and electrical properties respectively. It was observed that the roughness of the film after irradiation (for the fluence of 1 × 10{sup 12} ions/cm{sup 2}) ​ decreased to 0.68 nm from 1.6 nm and showed an increase in roughness to 1.35 nm on increasing the fluence to 5 × 10{sup 12} ions/cm{sup 2}. This oxide/metal/oxide structure fulfills the basic requirements of a TCE, like high-transmittance >75% for pristine and >80% for the fluence of 1 × 10{sup 12} ions/cm{sup 2} over a broad spectrum of visible light for practical applications. The multilayer structure shows change in the electrical resistivity from 1.6 × 10{sup −3} Ω cm to 6.3 × 10{sup −3} Ω cm after irradiation.

Irradiation-induced hardening/softening in SiO2 studied with instrumented indentation

International Nuclear Information System (INIS)

Nakano, Shinsuke; Muto, Shunsuke; Tanabe, Tetsuo

2005-01-01

To understand the plastic deformation mechanism of SiO 2 polytypes, we measured the mechanical parameters of He + -irradiated crystalline SiO 2 (α-quartz, c-SiO 2 ) and vitreous SiO 2 (silica glass, v-SiO 2 ) as functions of the irradiation dose, by using the instrumented indentation method combined with a finite-element analysis. We extracted the effects of local rotation and bending of the SiO 4 framework (the degree of local structural freedom), which play key roles in the plastic deformation, and expressed the hardness change with a simple formula. For v-SiO 2 , the changes in the density and the number of broken bonds correlated well with the change in the degree of freedom. In contrast, for c-SiO 2 the present formulation was insufficient to fully express the hardness change in the structural disordering regime. The structure change by irradiation peculiar to this material is discussed, based on the theoretical formulation

Photoluminescence study of high energy proton irradiation on Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Koo, Bonhyeong [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Lee, June Hyuk [Neutron Science Division, Korea Atomic Energy Research Institute (KAERI), 989-111 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Shin, Donghyeop [Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708 (United States); Ahn, Byung Tae, E-mail: btahn@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Shin, Byungha, E-mail: byungha@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2016-03-31

We have studied the effect of proton irradiation on Cu(In,Ga)Se{sub 2} (CIGS) thin films using photoluminescence (PL). We used a 10 MeV proton beam with varying doses from 10{sup 9} to 10{sup 12} cm{sup −2}. Intensity-dependent low temperature PL measurements suggest that the proton irradiation does not create a new defect level but instead changes the number of preexisting defects in the detection range of the PL system. By comparing PL spectra after the proton irradiation with those obtained after thermal annealing under inert gas as well as under hydrogen gas ambient, we find that the irradiation-induced change in the defect structure does not originate from the incorporation of hydrogen but from energetics of the irradiating particles. Electrical resistivity of the proton irradiated CIGS thin films is shown to decrease after the proton irradiation, and this is explained by the reduction of the concentration of compensating donor-like defects, specifically selenium vacancies, based on the PL results. - Highlights: • Photoluminescence study of 10 MeV proton irradiation on CIGS at 10 K. • Irradiation modified population of existing defects without introducing new levels. • Changes in CIGS by 10 MeV irradiation are due to energetics of irradiating protons.

Investigation of Au9+ swift heavy ion irradiation on CdS/CuInSe2 thin films

International Nuclear Information System (INIS)

Joshi, Rajesh A.; Taur, Vidya S.; Singh, Fouran; Sharma, Ramphal

2013-01-01

In the present manuscript we report about the preparation of CdS/CuInSe 2 heterojunction thin films by chemical ion exchange method and investigation of 120 MeV Au 9+ swift heavy ions (SHI) irradiation effect on its physicochemical as well as optoelectronic properties. These pristine (as grown) samples are irradiated with 120 MeV Au 9+ SHI of 5×10 11 and 5×10 12 ions/cm 2 fluencies and later on characterized for structural, compositional, morphological, optical and I–V characteristics. X-ray diffraction (XRD) pattern obtained from pristine and irradiated films shows considerable modifications in peak intensity as well as rising of some new peaks, corresponding to In 2 Se 3 , Cu 3 Se 2 and CuIn 2 Se 3 materials. Transmission electron microscope (TEM) images show decrease in grain size upon increase in irradiation ion fluencies, which is also supported from the observation of random and uneven distribution of nano-grains as confirmed through scanning electron microscope (SEM) images. Presence of Cd, Cu, In, S and Se in energy dispersive X-ray spectrum analysis (EDAX) confirms the expected and observed elemental composition in thin films, the absorbance peaks are related to band to band transitions and spin orbit splitting while energy band gap is observed to increase from 1.36 for pristine to 1.53 eV for SHI irradiated thin films and I–V characteristics under illumination to 100 mW/cm 2 light source shows enhancement in conversion efficiency from 0.26 to 1.59% upon irradiation. - Highlights: • Nanostructured CdS/CuInSe 2 can be grown by chemical ion exchange method. • Physicochemical and optoelectronic properties can be modified by 120 MeV Au 9+ SHI Irradiation. • Solar energy conversion efficiency improved from 0.26 to 1.59% in CdS/CuInSe 2 upon irradiation

Depression of pyrimidine dimer excision from the aspects of U.V. reversibility of irradiated cells

International Nuclear Information System (INIS)

Slamenova, D.; Slezarikova, V.; Masek, F.

1977-01-01

Depression of pyrimidine dimer excision induced in U.V. irradiated E.coli B/r T - trp - Hcr + cells by preirradiation cultivation in conditions of starving for the essential amino acid and thymine does not increase U.V.-reversibility of irradiated cells and does not influence the time of expression of trp + reversions. The expression of mutations becomes completed in control and prestarved cells prior to restoration of postradiation division. Genetic deficiency leads up to their high sensitivity to the mutagenic activity of U.V. irradiation. Expression of trp + revertants in Hcr - type cells does not become completed until after commencement of the postradiation division of irradiated cells. Prestarved E.coli B/r T - trp - Hcr + cells exhibited depression of excision even with postradiation cultivation in the absence of an essential amino acid, which is associated with greater stability of newly synthesized DNA and overall decrease of the death rate of cells. In postradiation starvation for the essential amino acid E.coli B/r T - trp - Hcr - cells irradiated with low U.V. light doses behaved similarly. Control E.coli B/r T - trp - Hcr + cells, cultivated after irradiation without amino acid, excised pyrimidine dimers; they are characterised by high degradation of newly synthesized DNA and increased death rate of cells. (author)

Toxicological and radiological safety of chicken meat irradiated with 7.5 MeV X-rays

Science.gov (United States)

Song, Beom-Seok; Lee, Yunjong; Park, Jong-Heum; Kim, Jae-Kyung; Park, Ha-Young; Kim, Dong-Ho; Kim, Chang-Jong; Kang, Il-Jun

2018-03-01

This study was conducted to evaluate the toxicological and radiological safety of chicken meat that had been irradiated at 30 kGy with 7.5 MeV X-rays. In a sub-chronic toxicity study, ICR mice were fed X-ray-irradiated chicken meat at 2500 mg/kg body weight daily for 90 days, and no mortality or abnormal clinical signs were observed throughout the study period. However, several hematological and serum biochemical parameters of the ICR mice differed significantly from those in the control group; nevertheless, the observed values were all within the normal range for the respective parameters. In addition, no toxicological effects were determined in male or female mice. Furthermore, no differences in gamma-ray spectrometric patterns were detected between the non-irradiated and irradiated samples, indicating that the radioactivity induced by 7.5 MeV X-ray irradiation was below the detection limit. These results tentatively suggest that chicken meat irradiated with 7.5 MeV X-rays would be safe for human consumption in terms of toxicology and radiology.

Food Irradiation Newsletter. V.13, no. 1

International Nuclear Information System (INIS)

1989-03-01

The International Conference on the Acceptance, Control of, and Trade in Irradiated Food, jointly sponsored by FAO, IAEA, WHO and ITC-UNCTAD/GATT, Geneva, Switzerland, December 1988, recognized that (1) food irradiation has the potential to reduce the incidence of foodborne diseases; (2) food irradiation can reduce post-harvest food losses and make available a larger quantity and a wider variety of foodstuffs for consumers - It can also be an effective quarantine treatment for certain food and thus contribute to international trade; (3) international trade in irradiated foods would be facilitated by harmonization of national procedures based on internationally recognized standards for the control of food irradiation. The ''International Document on Food Irradiation'' adopted by consensus at the Conference is included in this issue, which also contains excerpts of the 5th Annual Meeting of the International Consultative Group on Food Irradiation (ICGFI), convened in Vienna, September 1988, and reports of two co-ordinated meetings, the second Research Co-ordination Meeting on the Use of Irradiation as a Quarantine Treatment of Food and Agricultural Commodities, and the Second Co-ordination Meeting on Food Irradiation Programme for Developing Countries in Middle East and Europe. 3 tabs

Irradiation and annealing behavior of 15Kh2MFA reactor pressure vessel steel

International Nuclear Information System (INIS)

Popp, K.; Bergmann, U.; Bergner, F.; Hampe, E.; Leonhardt, W.D.; Schuetzler, H.P.; Viehrig, H.W.

1992-01-01

This work deals with the mechanical properties of RPV steels used WWER-440. The materials under investigation were a forging (base metal 15Kh2MFA) and the corresponding weld. Charpy V-notch specimens and tensile test specimens were irradiated in the WWER-2 Rheinsberg at about 270 C up to the two neutron fluence levels of 4 x 10 18 and 5 x 10 19 n/cm 2 (E>1MeV). Post-irradiation annealing heat treatments were performed, among others a 475 C/152 h treatment of technical interest. (orig.)

Thermal desorption spectroscopy of pyrolytic graphite cleavage faces after keV deuterium irradiation at 330-1000 K

International Nuclear Information System (INIS)

Gotoh, Y.; Yamaki, T.; Tokiguchi, K.

1992-01-01

Thermal desorption spectroscopy (TDS) measurements were made on D 2 and CD 4 from surface layers of pyrolytic graphite cleavage faces after 3 keV D + 3 irradiation to 1.5 x 10 18 D/cm 2 at irradiation temperatures from 330 to 1000 K. Thermal desorption of both D 2 and CD 4 was observed to rise simultaneously at around 700 K. The D 2 peak was found at T m = 900-1000 K, while the CD 4 peak appeared at a lower temperature, 800-840 K. The T m for the D 2 TDS increased, while that for the CD 4 decreased with increasing irradiation temperature. These results obviously indicate that the D 2 desorption is detrapping/recombination limited, while the CD 4 desorption is most likely to be diffusion limited. The amount of thermally desorbed D 2 after the D + irradiation was observed to monotonously decrease as the irradiation temperature was increased from 330 to 1000 K. These tendencies agreed with previous results for the irradiation temperature dependencies of both C1s chemical shift (XPS) and the interlayer spacing, d 002 (HRTEM), on the graphite basal face. (orig.)

Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

Energy Technology Data Exchange (ETDEWEB)

Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

2011-09-01

Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

X-ray diffraction studies of 145MeV proton-irradiated AlBeMet 162

Directory of Open Access Journals (Sweden)

Mohamed Elbakhshwan

2016-08-01

Full Text Available AlBeMet 162 (Materion Co., formerly Brush Wellman has been irradiated with 145MeV protons up to 1.2×1020cm−2 fluence, with irradiation temperatures in the range of 100–220°C. Macroscopic post-irradiation evaluation on the evolution of mechanical and thermal properties was integrated with a comprehensive X-ray- diffraction study using high-energy monochromatic and polychromatic X-ray beams, which offered a microscopic view of the irradiation damage effects on AlBeMet. The study confirmed the stability of the metal–matrix composite, its resistance to proton damage, and the continuing separation of the two distinct phases, fcc aluminum and hcp beryllium, following irradiation. Furthermore, based on the absence of inter-planar distance change during proton irradiation, it was confirmed that the stacking faults and clusters on the Al (111 planes are stable, and thus can migrate from the cascade region and be absorbed at various sinks. XRD analysis of the unirradiated AlBeMet 162 showed clear change in the texture of the fcc phase with orientation especially in the Al (111 reflection which exhibits a “non-perfect” six-fold symmetry, implying lack of isotropy in the composite.

Radiation enhanced reactivation of irradiated human adenovirus type 2 in human cells

International Nuclear Information System (INIS)

Jeeves, W.P.

1981-04-01

Radiation-enhanced reactivation (ER) of a radiation-damaged mammalian virus is the term given to the observation that the survival of irradiated virus can be enhanced by irradiation of an appropriate host cell prior to infection. In this work, both UV-enhanced reactivation (UVER) and gamma-ray-enhanced reactivation (γRER) of irradiated human adenovirus type 2 (AD 2) were studied in a variety of normal and DNA repair-deficient human fibroblast host cell strains. In order to examine the lesion specificity of ER in human cells, experiments were performed using UV-irradiated and γ-irradiated virus. The investigation was carried out using a sensitive technique of indirect immunofluorescence, according to which irradiated and unirradiated cell cultures were infected with irradiated or unirradiated AD 2 and were subsequently examined for the presence of viral structural antigens ('V' Ag) at a fixed time after infection

Processive nicking activity of T4 endonuclease V on UV-irradiated chromatin

International Nuclear Information System (INIS)

Gruskin, E.A.; Lloyd, R.S.

1986-01-01

T4 endonuclease V initiates the excision repair of pyrimidine dimers in UV-irradiated T4 infected E. coli cells. The pyrimidine dimer specific nicking activity of T4 endonuclease V functions by a processive scanning on UV-irradiated DNA. Previously it has been demonstrated that introduction of endonuclease V into repair-deficient human cells causes a restoration of UV survival in these cells. This demonstrates that endonuclease V is competent to incise mammalian DNA at the site of pyrimidine dimers. In order to assess the ability of endonuclease V to act processively on DNA associated as chromatin, minichromosomes were prepared for use as a substrate. Form I DNA was reconstituted with H3, H4 +/- H1 histones by sequential dialysis steps from 2.0 M NaCl to 50 mM NaCl. Time course reactions were performed with minichromosomes containing 10 and 25 dimers per molecule. In each case the rate of disappearance of form I DNA which was associated as chromatin was decreased relative to that of naked form I DNA. Concurrent with that observation, the rate and extent of appearance of form III DNA was increased with the DNA in minichromosomes relative to naked DNA. This is diagnostic of an enhancement of processivity. The inclusion of H1 in the minichromosomes resulted in a slight additional increase in processivity relative to minichromosomes consisting only of H3 and H4

Embryonic effects transmitted by male mice irradiated with 512 MeV/u 56Fe nuclei

International Nuclear Information System (INIS)

Wiley, L.M.; Van Beek, M.E.A.B.; Raabe, O.G.

1994-01-01

High-energy, high-charge nuclei may contribute substantially to the yearly equivalent dose in space flight from galactic cosmic radiation (GCR) at solar minimum. The largest single heavy-ion component is 56 Fe. We used the mouse embryo chimera assay to test 512 MeV/u 56 Fe nuclei for effects on the rate of proliferation of embryonic cells transmitted by sperm from irradiated mice. Male CD1 mice were acutely irradiated with 0.01, 0.05, or 0.1 Gy (LET, 184 keV/μm; fluence, 3.5 x 10 4 -3.3 x 10 5 nuclei/cm 2 ; average dose rate, 0.02 Gy/min) at the Lawrence Berkeley Laboratory BEVATRON/BEVALAC Facility in Berkeley, CA. Irradiated males were bred weekly for 7 weeks to nonirradiated females and their four-cell embryos were paired with control embryos, forming aggregation chimeras. After 30-35 h of culture, chimeras were dissociated to obtain open-quotes proliferation ratiosclose quotes (number of cells contributed by the embryo from the irradiated male/total number of cells in the chimera). Significant dose-dependent decreases in proliferation ratios were obtained across all three dose groups for postirradiation week 2 (P 56 Fe nuclei. However, up to 47% of sperm during postirradiation weeks 1 and 2 transmitted proliferation ratios that were at or below one standard deviation from control mean proliferation ratios. 26 refs., 4 figs., 10 tabs

Dose determination of 600 MeV proton irradiated specimens

International Nuclear Information System (INIS)

Gavillet, D.

1991-01-01

The calculation method for the experimental determination of the atomic production cross section from the γ activity measurements are presented. This method is used for the determination of some isotope production cross sections for 600 MeV proton irradition in MANET steel, copper, tungsten, gold and titanium. The results are compared with some calculation. These values are used to determine the dose of specimens irradiated in the PIREX II facility. The results are discussed in terms of the irradiation parameters. A guide for the use of the production cross section determined in the dosimetry experiment are given. (author) tabs., refs

Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

International Nuclear Information System (INIS)

Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A.C.; Montgomery, P.

2012-01-01

A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 10 12 to 3.5 × 10 15 cm −2 . The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ∼5 × 10 13 He + cm −2 . The carbon depletion levels off at a fluence of ∼5 × 10 14 He + cm −2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10 −16 cm 2 , respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He + beam is made.

Change of I-V characteristics of SiC diodes upon reactor irradiation; Modification des caracteristiques I-V de jonctions p-n au SiC du fait d'une irradiation dans un reacteur; Izmeneniya kharakteristik I-V vyrashchennogo v SiC perekhoda tipa p-n posle oblucheniya ego v reaktore; Modificaciones que sufren por irradiacion en un reactor las caracteristicas I-V de uniones p-n en SiC

Energy Technology Data Exchange (ETDEWEB)

Heerschap, M; De Coninck, R [Solid State Physics Dept., SCK-CEN, Mol (Belgium)

1962-04-15

In search for semiconductors, which can be used in high-flux reactors in order to measure flux distributions, we irradiated SiC p-n junctions in the Belgium BR-1 reactor. Two types of SiC-diodes of different origin have been irradiated. These junctions are grown in the Lely-furnace. The change in forward and reverse characteristics have been measured during and after irradiation up to temperatures of 150{sup o}C, while measurements up to a temperature of 500{sup o}C are in progress. It has been found that one type resists BR-1 neutrons up to an integrated flux of 10{sup 15} n/cm{sup 2}, while the other resists irradiation up to a flux of 10{sup 17} n/cm{sup 2}. The changes in characteristics are given as well as the result of some annealing experiments. (author) [French] En recherchant des semi-conducteurs pouvant servir a mesurer les distributions de flux dans les reacteurs a haut flux de neutrons, les auteurs ont irradie des jonctions p-n au SiC dans le reacteur belge BR-1. Deux types de diodes a SiC d'origines differentes ont ete ainsi irradies. Les jonctions en question sont preparees par etirage dans le four Lely. Les auteurs ont mesure les modifications subies par les caracteristiques I-V apres et pendant l'irradiation a des temperatures allant jusqu'a 150{sup o}C; ils poursuivent leurs mesures dans la gamme des temperatures allant de 150{sup o}C a 500{sup o}C. Us ont constate que l'un des types de diode a SiC resiste aux neutrons du reacteur BR-1 jusqu'a 10{sup 15} n/cm{sup 2}, tandis que l'autre type resiste a l'irradiation jusqu'a 10{sup 17} n/cm{sup 2}. Les auteurs indiquent les modifications subies par les caracteristiques, ainsi que le resultat de certaines experiences de recuit. (author) [Spanish] Los autores estan tratando de encontrar semiconductores con los que sea posible medir distribuciones de flujo en reactores de flujo elevado, y con este fin irradiaron uniones p-n del SiC en el reactor BR-1 de Belgica. Irradiaron dos tipos de diodos de SiC de

Sprout inhibition of potatoes by electron irradiation, (2)

International Nuclear Information System (INIS)

Furuta, Junichiro; Hiraoka, Eiichi; Okamoto, Shinichi; Fujishiro, Masatoshi; Kanazawa, Tamotsu; Ohnishi, Tokuhiro; Tsujii, Yukio; Hori, Shiro

1982-01-01

Sprouting of potatoes are inhibited usually by the gamma-ray irradiation. The buds of potatoes exist in a very thin layer near surface of each tuber. So the inhibition will be performed sufficiently by surface irradiation using electron beams. To irradiate all surfaces of each potato uniformly, the authors prepare a new apparatus which is a conveyer passing under an electron beam scanner of accelerator rotating the potatoes by many rotating rollers. The sprout inhibition experiment of potatoes was performed by following three methods to obtain the performance of this apparatus, and the results were compared. 1) turn over irradiation method --- potatoes were arranged in one layer in plastic baskets and were irradiated on the conveyor. After irradiation, the potatoes were turned over and were irradiated again. 2) rotating irradiation method --- potatoes were rotated on the rotating roller apparatus set on the conveyer and were passed under the electron beam scanner. 3) rotating irradiation method with an improved rotating roller apparatus --- the rotating rollers have many protuberances on their surface to irradiate all of potato surface more uniform. 550 keV electron beams by Cockcroft-Walton type accelerator were used for the irradiation and the irradiated dose was 5 to 20 krad. 40 pieces of potates, ''Danshaku'' variety yielded in June 1981, were irradiated for each dose in the beginning of August. Prior to these irradiation experiments, the dose and dose uniformity were checked by the agar color dosimeters. After the irradiation, potatoes were stored in natural condition and their sprouting was observed. The potatoes irradiated by the improved rotating roller apparatus were almost completely sprout-inhibited by 20 krad irradiation. (author)

Spectral and raw quasi in-situ energy dispersive X-ray data captured via a TEM analysis of an ODS austenitic stainless steel sample under 1 MeV Kr2+ high temperature irradiation.

Science.gov (United States)

Brooks, Adam J; Yao, Zhongwen

2017-10-01

The data presented in this article is related to the research experiment, titled: ' Quasi in-situ energy dispersive X-ray spectroscopy observation of matrix and solute interactions on Y-Ti-O oxide particles in an austenitic stainless steel under 1 MeV Kr 2+ high temperature irradiation' (Brooks et al., 2017) [1]. Quasi in-situ analysis during 1 MeV Kr 2+ 520 °C irradiation allowed the same microstructural area to be observed using a transmission electron microscope (TEM), on an oxide dispersion strengthened (ODS) austenitic stainless steel sample. The data presented contains two sets of energy dispersive X-ray spectroscopy (EDX) data collected before and after irradiation to 1.5 displacements-per-atom (~1.25×10 -3  dpa/s with 7.5×10 14  ions cm -2 ). The vendor software used to process and output the data is the Bruker Esprit v1.9 suite. The data includes the spectral (counts vs. keV energy) of the quasi in-situ scanned region (512×512 pixels at 56k magnification), along with the EDX scanning parameters. The.raw files from the Bruker Esprit v1.9 output are additionally included along with the.rpl data information files. Furthermore included are the two quasi in-situ HAADF images for visual comparison of the regions before and after irradiation. This in-situ experiment is deemed ' quasi' due to the thin foil irradiation taking place at an external TEM facility. We present this data for critical and/or extended analysis from the scientific community, with applications applying to: experimental data correlation, confirmation of results, and as computer based modeling inputs.

Evaluation of induced radioactivity in 10 MeV-electron irradiated spices, (1); [gamma]-ray measurement

Energy Technology Data Exchange (ETDEWEB)

Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Shibata, Setsuko; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

1994-02-01

Black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electrons from a linear accelerator to a dose of 100 kGy and radioactivity was measured in order to estimate induced radioactivity in the irradiated foods. Induced radioactivity could not be detected significantly by [gamma]-ray spectrometry in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list of photonuclear reactions which could produce radioactivity below 10 MeV. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H[sub 50] according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from [sup 40]K contained in the samples. (author).

Thermoluminescence of KI:Eu2+ Stimulated by Ultraviolet Irradiation at Different Temperatures

International Nuclear Information System (INIS)

Aguirre de Carcer, I.; Jaque, F.; Townsend, P.D.

1999-01-01

The thermoluminescence (TL) of KI:Eu 2+ after ultraviolet (254 nm) irradiation at different temperatures from -40 deg. C to +40 deg. C has been studied. Two main glow peaks and some minor features have been identified on the thermoluminescence glow curves. Irradiating at low temperature gives a strong peak at γ5 deg. C and a less pronounced one at 230 deg. C. The TL glow peak emission spectra were analysed as consisting of the addition of several Gaussian shaped emission bands. The position of the Gaussian peaks, and their widths, are coincident with divalent europium emission at different sites of the KI:Eu 2+ system. A new emission band centred at 3.05 eV, 0.16 eV FWHM for Eu 2+ has been observed from the TL emission spectra. The changes in the spectral distribution of the TL emission with irradiation temperature are discussed. (author)

The study of 1 MeV electron irradiation induced defects in N-type and P-type monocrystalline silicon

Science.gov (United States)

Babaee, S.; Ghozati, S. B.

2017-12-01

Despite extensive use of GaAs cells in space, silicon cells are still being used. The reason is that not only they provide a good compromise between efficiency and cost, but also some countries do not have the required technology for manufacturing GaAs. Behavior of a silicon cell under any levels of charged particle irradiation could be deducted from the results of a damage equivalent 1 MeV electron irradiation using the NASA EQflux open source software package. In this paper for the first time, we have studied the behavior of a silicon cell before and after 1 MeV electron irradiation with 1014, 1015 and 1016 electrons-cm-2 fluences, using SILVACO TCAD simulation software package. Simulation was carried out at room temperature under AM0 condition. Results reveal that open circuit voltage and efficiency decrease after irradiation while short circuit current shows a slight increase in the trend around 5 × 1016 electrons-cm-2, and short circuit current loss plays an important role on efficiency changes rather than open circuit voltage.

Characterization of a power bipolar transistor as high-dose dosimeter for 1.9-2.2 MeV electron beams

Energy Technology Data Exchange (ETDEWEB)

Fuochi, P.G., E-mail: fuochi@isof.cnr.i [ISOF-CNR Institute, Via P. Gobetti 101, I-40129, Bologna (Italy); Lavalle, M.; Corda, U. [ISOF-CNR Institute, Via P. Gobetti 101, I-40129, Bologna (Italy); Kuntz, F.; Plumeri, S. [Aerial, Parc d' Innovation Rue Laurent Fries F-67400 Illkirch (France); Gombia, E. [IMEM-CNR Institute, Viale delle Scienze 37 A, Loc. Fontanini, 43010 Parma (Italy)

2010-04-15

Results of the characterization studies on a power bipolar transistor investigated as a possible radiation dosimeter under laboratory condition using electron beams of energies from 2.2 to 8.6 MeV and gamma rays from a {sup 60}Co source and tested in industrial irradiation plants having high-activity {sup 60}Co gamma-source and high-energy, high-power electron beam have previously been reported. The present paper describes recent studies performed on this type of bipolar transistor irradiated with 1.9 and 2.2 MeV electron beams in the dose range 5-50 kGy. Dose response, post-irradiation heat treatment and stability, effects of temperature during irradiation in the range from -104 to +22 deg. C, dependence on temperature during reading in the range 20-50 deg. C, and the difference in response of the transistors irradiated from the plastic side and the copper side are reported. DLTS measurements performed on the irradiated devices to identify the recombination centres introduced by radiation and their dependence on dose and energy of the electron beam are also reported.

Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons

Science.gov (United States)

Joita, A. C.; Nistor, S. V.

2018-04-01

Enhancing the long term stable performance of silicon detectors used for monitoring the position and flux of the particle beams in high energy physics experiments requires a better knowledge of the nature, stability, and transformation properties of the radiation defects created over the operation time. We report the results of an electron spin resonance investigation in the nature, transformation, and long term stability of the irradiation paramagnetic point defects (IPPDs) produced by high fluence (2 × 1016 cm-2), high energy (27 MeV) electrons in n-type, P-doped standard floating zone silicon. We found out that both freshly irradiated and aged (i.e., stored after irradiation for 3.5 years at 250 K) samples mainly contain negatively charged tetravacancy and pentavacancy defects in the first case and tetravacancy defects in the second one. The fact that such small cluster vacancy defects have not been observed by irradiation with low energy (below 5 MeV) electrons, but were abundantly produced by irradiation with neutrons, strongly suggests the presence of the same mechanism of direct formation of small vacancy clusters by irradiation with neutrons and high energy, high fluence electrons, in agreement with theoretical predictions. Differences in the nature and annealing properties of the IPPDs observed between the 27 MeV electrons freshly irradiated, and irradiated and aged samples were attributed to the presence of a high concentration of divacancies in the freshly irradiated samples, defects which transform during storage at 250 K through diffusion and recombination processes.

Defect structures in YBa2Cu3O/sub 7-x/ produced by electron irradiation

International Nuclear Information System (INIS)

Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

1987-12-01

Defect structures in YBa 2 Cu 3 O/sub 7-x/ produced by electron irradiation at 300 0 K were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to be 152 keV and 131 keV (+- 7 keV) in directions near the a and b (b > a) axes (both perpendicular to c, the long axis in the orthorhombic structure), respectively. During above threshold irradiations in an electron flux of 3 x 10 18 cm -2 s -1 , extended defects were observed to form and grow to sizes of 10 to 50 nm over 1000 s in material thicknesses 20 to 200 nm. Such low electron threshold energies suggest oxygen atom displacements with recoil energies near 20 eV. The observation of movement of twin boundaries during irradiation just above threshold suggests movement of the basal plane oxygen atoms by direct displacement or defect migration processes. Crystals irradiated above threshold were observed after about 24 hours to have transformed to a structure heavily faulted on planes perpendicular to the c axis. 3 refs., 3 figs

Effect of helium on swelling and microstructural evolution in ion-irradiated V-15Cr-5Ti alloy

International Nuclear Information System (INIS)

Loomis, B.A.; Kestel, B.J.; Gerber, S.B.; Ayrault, G.

1986-03-01

An investigation was made on the effects of implanted helium on the swelling and microstructural evolution that results from energetic single- and dual-ion irradiation of the V-15Cr-5Ti alloy. Single-ion irradiations were utilized for a simulated production of the irradiation damage that might be expected from neutron irradiation of the alloy in a reactor with a fast neutron energy spectrum (E > 0.1 MeV). Dual-ion irradiations were utilized for a simulated production of the simultaneous creation of helium atoms and irradiation damage in the alloy in the MFR environment. Experimental results are also presented on the radiation-induced segregation of the constituent atoms in the single- and dual-ion irradiated alloy

Resistance to He{sup 2+} irradiation damage in metallic glass Ta{sub 38}Ni{sub 62}

Energy Technology Data Exchange (ETDEWEB)

Hou, Wenjing [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Mei, Xianxiu, E-mail: xxmei@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Zhang, Xiaonan; Wang, Yingmin; Qiang, Jianbing [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Sun, Jianrong [Institute of Modern Physics, The Chinese Academy of Sciences, Lanzhou 730000 (China); Wang, Younian [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China)

2016-10-15

Highlights: • Metallic glass Ta{sub 38}Ni{sub 62} irradiated by different fluence of He{sup 2+} remained amorphous. • The helium bubble layer appeared at the end of ion range 1.01 μm away from surface. • Helium bubbles were larger in the layer center and reduced to top and bottom sides. • No significant damage appeared in the surface of metallic glass Ta{sub 38}Ni{sub 62}. • Ta{sub 38}Ni{sub 62} better resisted to He{sup 2+} irradiation than W and V{sub 87.5}Cr{sub 4.17}Ti{sub 4.17}Nb{sub 4.17}. - Abstract: Metallic glass Ta{sub 38}Ni{sub 62} strips, metallic W, and V{sub 87.5}Cr{sub 4.17}Ti{sub 4.17}Nb{sub 4.17} alloy were irradiated using a 500 keV He{sup 2+} ion beam at different fluence to compare the metallic glass resistance to irradiation. Metallic glass Ta{sub 38}Ni{sub 62} remained amorphous at different He{sup 2+} irradiation fluence. Transmission electron microscopy analysis revealed the presence of helium bubbles at the end of the range of helium ions in the metallic glass. No significant damage resulted in the metallic glass surface, and the root mean square roughness increased nonlinearly with the increase in fluence. At 1 × 10{sup 18} ions/cm{sup 2}, metallic W appeared in larger sunken areas on the surface and V{sub 87.5}Cr{sub 4.17}Ti{sub 4.17}Nb{sub 4.17} alloy experienced multi-layer flaking. The metallic glass Ta{sub 38}Ni{sub 62} resistance to He{sup 2+} ion beam irradiation was better than that of metallic W, and that of the V{sub 87.5}Cr{sub 4.17}Ti{sub 4.17}Nb{sub 4.17} alloy was the poorest.

The effects of H2SO4 and NaOH solutions on irradiated sawdust for ethanol production

International Nuclear Information System (INIS)

Lina, M.R.; Susiana; Siagian, E.G.

1988-01-01

The research of gamma irradiated sawdust, which were added H2SO4 and NaOH solutions on fermentation process for ethanol production was investigated. Irradiation doses used were : 0 and 200 kGy, while H2SO4 and NaOH solutions had concentrations of 0,1 and 2% (v/v) and (b/v), with a ratio of sawdust weight and solution volume = 1:3. Fine powder of sawdust with a mesh of 60, was hydrolysed by enzyme (cellulase), S.cerevisiae was a yeast used for fermentation process and fermentation time was 4 hours. From the experimental results showed that irradiation doses up to 200 kGy, could increase the ethanol concentration from sawdust fermentation signivicantly (P= . Irradiation treatment, addition of the solutions and its interaction could not influence the total carbohydrate before and after fermentation. (author). 9 refs, 2 figs, 6 tabs

Independent CO2 loop for cooling the samples irradiated in the RA reactor vertical experimental channels, Task 2.50.05

International Nuclear Information System (INIS)

Stojic, M.; Pavicevic, M.

1964-01-01

This report contains the following volumes V and VI of the Project 'Independent CO 2 loop for cooling the samples irradiated in RA reactor vertical experimental channels': Design project of the dosimetry control system in the independent CO 2 loop for cooling the samples irradiated in the RA reactor vertical experimental channels, and Safety report for the Independent CO 2 loop for cooling the samples irradiated in the RA reactor vertical experimental channels [sr

Effects of irradiation at low temperature on V-4Cr-4Ti

International Nuclear Information System (INIS)

Alexander, D.J.; Snead, L.L.; Zinkle, S.J.

1996-01-01

Irradiation at low temperatures (100 to 275 degrees C) to 0.5 dpa causes significant embrittlement and changes in the subsequent room temperature tensile properties of V-4Cr-4Ti. The yield strength and microhardness at room temperature increase with increasing irradiation temperature. The tensile flow properties at room temperature show large increases in strength and a complete loss of work hardening capacity with no uniform ductility. Embrittlement, as measured by an increase in the ductile-to-brittle transition temperature, increases with increasing irradiation temperature, at least up to 275 degrees C. This embrittlement is not due to pickup of O or other interstitial solutes during the irradiation

Effects of irradiation at low temperature on V-4Cr-4Ti

Energy Technology Data Exchange (ETDEWEB)

Alexander, D.J.; Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)] [and others

1996-10-01

Irradiation at low temperatures (100 to 275{degrees}C) to 0.5 dpa causes significant embrittlement and changes in the subsequent room temperature tensile properties of V-4Cr-4Ti. The yield strength and microhardness at room temperature increase with increasing irradiation temperature. The tensile flow properties at room temperature show large increases in strength and a complete loss of work hardening capacity with no uniform ductility. Embrittlement, as measured by an increase in the ductile-to-brittle transition temperature, increases with increasing irradiation temperature, at least up to 275{degrees}C. This embrittlement is not due to pickup of O or other interstitial solutes during the irradiation.

AGR-2 irradiation test final as-run report, Rev. 1

International Nuclear Information System (INIS)

2014-01-01

test contained six independently controlled and monitored capsules. Each U.S. capsule contained 12 compacts of either UCO or UO 2 AGR coated fuel. No fuel particles failed during the AGR-2 irradiation. Final burnup values on a per compact basis ranged from 7.26 to 13.15% FIMA (fissions per initial heavy-metal atom) for UCO fuel, and 9.01 to 10.69% FIMA for UO 2 fuel, while fast fluence values ranged from 1.94 to 3.47x10 25 n/m 2 (E >0.18 MeV) for UCO fuel, and from 3.05 to 3.53x10 25 n/m 2 (E >0.18 MeV) for UO 2 fuel. Time-average volume-average (TAVA) temperatures on a capsule basis at the end of irradiation ranged from 987°C in Capsule 6 to 1296°C in Capsule 2 for UCO, and from 996 to 1062°C in UO 2 -fueled Capsule 3. By the end of the irradiation, all of the installed thermocouples (TCs) had failed. Fission product release-to-birth (R/B) ratios were quite low. In the UCO capsules, R/B values during the first three cycles were below 10 -6 with the exception of the hotter Capsule 2, in which the R/Bs reached 2x10 -6 . In the UO 2 capsule (Capsule 3), the R/B values during the first three cycles were below 10 -7 . R/B values for all following cycles are not reliable due to gas flow and cross talk issues.

In-situ TEM observation of nano-void formation in UO2 under irradiation

Science.gov (United States)

Sabathier, C.; Martin, G.; Michel, A.; Carlot, G.; Maillard, S.; Bachelet, C.; Fortuna, F.; Kaitasov, O.; Oliviero, E.; Garcia, P.

2014-05-01

Transmission electron microscopy (TEM) observations of UO2 polycrystals irradiated in situ with 4 MeV Au ions were performed at room temperature (RT) to better understand the mechanisms of cavity and ultimately fission products nucleation in UO2. Experiments were carried out at the JANNuS Orsay facility that enables in situ ion irradiations inside the microscope to be carried out. The majority of 4 MeV gold ions were transmitted through the thin foil, and the induced radiation defects were investigated by TEM. Observations showed that nano-void formation occurs at ambient temperature in UO2 thin foils irradiated with energetic heavy ions under an essentially nuclear energy loss regime. The diameter and density of nano-objects were measured as a function of the gold irradiation dose at RT. A previous paper has also revealed a similar nano-object population after a Xe implantation performed at 390 keV at 870 K. The nano-object density was modelled using simple concepts derived from Classical Molecular Dynamics simulations. The results are in good agreement, which suggests a mechanism of heterogeneous nucleation induced by energetic cascade overlaps. This indicates that nano-void formation mechanism is controlled by radiation damage. Such nanovoids are likely to act as sinks for mobile fission products during reactor operation.

Thermoluminescence properties of Al2O3:Tb nanoparticles irradiated by gamma rays and 85 MeV C6+ ion beam

International Nuclear Information System (INIS)

Salah, Numan; Alharbi, Najlaa D.; Habib, Sami S.; Lochab, S.P.

2015-01-01

Carbon ions beam is recently recognized as an ideal cancer treatment modality, because of its excellent local tumor control. These ions have a high relative biological effectiveness resulting from high linear energy transfer (LET) and their sharp Bragg peak. However, the dose of those energetic ions needs to be measured with great precision using a proper dosimeter. Aluminum Oxide (Al 2 O 3 ) is a highly luminescent phosphor widely used for radiation dosimetry using thermoluminesence (TL) technique. In this work nanoparticles of this material activated by different elements like Eu, Tb, Dy, Cu and Ag were evaluated for their TL response to gamma rays irradiation. Tb doped sample is found to be the most sensitive sample, which could be selected for exposure to 85 MeV C 6+ ion beam in the fluence range 10 9 –10 13 ions/cm 2 . The obtained result shows that C ion beam irradiated sample has a simple glow curve structure with a prominent glow peak at around 230 °C. This glow curve has a dosimetric peak better than those induced by gamma rays. This glow peak exhibits a linear response in the range 10 9 –10 11 ions/cm 2 , corresponding to the equivalent absorbed doses 0.285–28.5 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The wide linear response of Al 2 O 3 :Tb nanoparticles along with the low fading makes this low cost nanomaterial a good candidate for C ion beam dosimetry. - Highlights: • Nanoparticles of Al 2 O 3 doped with Eu, Tb, Dy, Cu and Ag were synthesised. • They were evaluated for their TL response to gamma rays and C ion beam irradiation. • Tb doped sample is the most sensitive sample to gamma rays. • Al 2 O 3 :Tb was exposed to 85 MeV C 6+ ion beam in the fluence range 10 9 -10 13 ions/cm 2 . • The glow peak induced by C ions has a linear response in the range 10 9 -10 11 ions/cm 2

Dislocation Climb Sources Activated by 1 MeV Electron Irradiation of Copper-Nickel Alloys

DEFF Research Database (Denmark)

Barlow, P.; Leffers, Torben

1977-01-01

Climb sources emitting dislocation loops are observed in Cu-Ni alloys during irradiation with 1 MeV electrons in a high voltage electron microscope. High source densities are found in alloys containing 5, 10 and 20% Ni, but sources are also observed in alloys containing 1 and 2% Ni. The range of ...

Positron lifetime studies of 100-MeV oxygen irradiated Pb-doped Bi-2223 superconductors

NARCIS (Netherlands)

Banerjee, T.; Viswanath, R.N.; Kanjilal, D.; Kumar, R.; Ramasamy, S.

2000-01-01

Positron lifetime studies have been carried out for unirradiated and 100-MeV oxygen ion irradiated Pb-doped Bi-2223 superconductors. The analysis of positron lifetime spectra revealed three lifetime components: a short lifetime, τ1 = 153–196 ps; an intermediate lifetime, τ2 = 269–339 ps; and a long

Large scale silver nanowires network fabricated by MeV hydrogen (H+) ion beam irradiation

International Nuclear Information System (INIS)

S, Honey; S, Naseem; A, Ishaq; M, Maaza; M T, Bhatti; D, Wan

2016-01-01

A random two-dimensional large scale nano-network of silver nanowires (Ag-NWs) is fabricated by MeV hydrogen (H + ) ion beam irradiation. Ag-NWs are irradiated under H +  ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H + ion beam-induced welding of Ag-NWs at intersecting positions. H +  ion beam induced welding is confirmed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Moreover, the structure of Ag NWs remains stable under H +  ion beam, and networks are optically transparent. Morphology also remains stable under H +  ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H +  ion beam irradiation. The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices. (paper)

Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

International Nuclear Information System (INIS)

Eremin, V.; Verbitskaya, E.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

1996-03-01

Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP + -p-n + detectors. The PP + -p-n + detectors were used to simulate the PP + -n-n + detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified

Effect of pulsed dose in simultaneous and sequential irradiation of V-79 cells by 14.8 MeV neutrons and 60Co photons

International Nuclear Information System (INIS)

Higgins, P.D.; DeLuca, P.M. Jr.; Gould, M.N.; Schell, M.C.; Pearson, D.W.

1983-01-01

The effect of irradiating V-79 Chinese hamster ovary cells with a mixture of 40% 14.8-MeV neutrons and 60% 60 Co photons with simultaneous or sequential exposures is investigated. Target doses are obtained by irradiating cell samples with 3-minute-long pulses of alternating neutrons and photons (in the sequential case) or with mixed neutrons and photons followed by equal beam-off periods to insure equal total-exposure times for sequenced and simultaneous irradiations. We observe qualitative differences between the survival results under each beam configuration that confirms earlier observations

500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films

Science.gov (United States)

Bharati, B.; Mishra, N. C.; Kanjilal, D.; Rath, Chandana

2018-01-01

In our earlier report, where we have demonstrated ferromagnetic behavior at room temperature (RT) in TiO2 thin films deposited through electron beam evaporation technique followed by annealing either in Ar or O2 atmosphere [Mohanty et al., Journal of Magnetism and Magnetic Materials 355 (2014) 240-245], here we have studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions. The pristine film while exhibits anatase phase, the films become amorphous after irradiating at fluence in the range 1 × 1014 to 1 × 1016 ions/cm2. Increasing the fluence up to 5 × 1016 ions/cm2, amorphous to crystalline phase transformation occurs and the structure becomes brookite. Although anatase to rutile phase transformation is usually reported in literatures, anatase to brookite phase transformation is an unusual feature which we have reported here for the first time. Such anatase to brookite phase transformation is accompanied with grain growth without showing any change in film thickness evidenced from Rutherford's Back Scattering (RBS) measurement. From scanning probe micrographs (SPM), roughness is found to be more in amorphous films than in the crystalline ones. Anatase to brookite phase transformation could be realized by considering the importance of intermediate amorphous phase. Because due to amorphous phase, heat deposited by energetic ions are localized as dissipation of heat is less and as a result, the localized region crystallizes in brookite phase followed by grain growth as observed in highest fluence. Further, we have demonstrated ferromagnetic behavior at RT in irradiated films similar to pristine one, irrespective of their phase and crystallinity. Origin for room temperature ferromagnetism (RTFM) is attributed to the presence of oxygen vacancies which is confirmed by carrying out XPS measurement.

Irradiation defects in the A-15 compounds V3Si and Nb3Ge: effects on superconducting and transport properties

International Nuclear Information System (INIS)

Rullier-Albenque, F.

1984-11-01

In the first part the mechanisms of atomic displacements under electron irradiation in these diatomic ordered solids are studied. In the case of superconducting alloys, simultaneous measurements of electrical resistivity at 20 K and critical temperature allow to distinguish the influence of point defects created in each sub-lattice and antisite defects. The threshold energies have been determined. In the case of V 3 Si, Frenkel pairs have been characterized by their specific resistivities and the decrease of Tsub(c) by vanadium vacancies. The Tsub(c) results obtained on V 3 Si also reveal the existence of a threshold electron energy to produce antisite defects. The second part is a comparative study of irradiation effects in Nb 3 Ge with very different kinds of projectiles: 2.5 MeV electrons, fast neutrons or 100 MeV heavy ions (uranium fission fragments). For these three types of irradiation, resistivity and critical temperature damage can be described in terms of point defects: Frenkel pairs and antisite defects. In the third part we have studied the influence of 2.5 MeV electron or fission fragment-irradiation on the resistivity versus temperature curves of Nb 3 Ge. For both projectiles, negative temperature coefficients of resistivity drho)/dT, were measured and correlated with resistivity at 280 K and 25 K. These anomalous transport properties are related to an electron localization process assisted by electron-phonon and electron-electron interaction [fr

Low temperature irradiation of iron, zirconium and copper by 10 to 16 MeV protons

Energy Technology Data Exchange (ETDEWEB)

Omar, A M

1978-01-01

A theoretical analysis of scattering and radiation damage parameters is carried out for 14 MeV neutrons and 10-17 MeV protons on Fe, Ni, Cu, Zr, Nb, and Au. Damage energies are computed for the interactions using both elastic and non-elastic data. The results show that proton encounters deposit a greater damage energy than 14 MeV neutrons. To examine the theoretical results, electrical resistivity measurements are undertaken for Fe, Zr and Cu irradiated at 12 to 17.5K with 10 to 16 MeV protons. Post-irradiation annealing is carried out in situ using a closed-cycle helium-cooled cryostat. Values of the resistivity damage rate are compared with values estimated from the theoretical damage-energy results. Also, the observed stage I recovery is analysed in terms of the corresponding recovery reported for electron and fast-neutron irradiations. The relation between the 16 MeV proton data and published data estimated from a fusion reactor spectrum is discussed. It is also shown that protons create a damage structure similar to a superposition of the damage structures generated by electrons and fast neutrons. The sample state of imperfection is shown to influence the induced damage state in proton irradiation.

Amount of sister chromatid exchanges and survival of Chinese hamster V79-4 cells after irradiation with 0,7 MeV neutrons

International Nuclear Information System (INIS)

Lapidus, I.L.; Nasonova, E.A.

1987-01-01

The dependence of the survival and induction of sister chromatid exchanges (SCEs) in Chinese hamster V79-4 cells on the dose of γ-rays and neutrons with average energy 0.7 MeV has been analysed. The value of RBE for neutrons was 5.5. It has been shown that the number of SCE increased with the dose of γ-irradiation and no induction could be detected after neutron irradiation

Thermo-luminescence and photoluminescence studies of Al2O3 irradiated with heavy ions

International Nuclear Information System (INIS)

Jheeta, K.S.

2008-06-01

Thermo-luminescence (TL) spectra of single crystals of Al 2 O 3 (sapphire) irradiated with 200 MeV swift Ag ions at different fluence in the range 1x10 11 to 1x10 13 ions/cm 2 has been recorded at room temperature by keeping the warming rate 2K/min. The TL glow curve of the irradiated samples has a simple structure with a prominent peak at ∼ 500 K with one small peak at 650 K. The intensity of main peak increases with the ion fluence. This has been attributed to the creation of new traps on irradiation. Also, a shift of 8 K in the peak position towards low temperature side has been observed at higher fluence 1x10 13 ions/cm 2 . In addition, photoluminescence (PL) spectra of irradiated samples have been recorded at room temperature upon 2.8 eV excitation. A broad band consisting of mainly two emission bands, respectively at 2.5 and 2.3 eV corresponding to F 2 and F 2 2+ defect centers is observed. The intensity of these bands shows an increasing trend up to fluence 5x10 12 ions/cm 2 and then decreases at higher fluence 1x10 13 ions/cm 2 . The results are interpreted in terms of creation of newly defect centers, clustering/aggregation and radiation-induced annihilation of defects. (author)

Specific induced activity profile at the rotary specimen rack of IPR-R1 TRIGA reactor after the introduction of a new pneumatic transfer tube

International Nuclear Information System (INIS)

Souza, Luiz Claudio Andrade; Zangirolami, Dante Marco; Maretti Junior, Fausto; Ferreira, Andrea Vidal

2011-01-01

The IPR-R1 TRIGA nuclear reactor is located in Belo Horizonte, Brazil, at the Nuclear Technology Development Center (Centro de Desenvolvimento da Tecnologia Nuclear, CDTN) of the National Committee on Nuclear Energy (Comissao Nacional de Energia Nuclear, CNEN). One of its irradiation devices is the rotary specimen rack (RSR), outside the reactor core, with forty irradiation positions arranged in a cylindrical geometry. In a previous work, the neutron fluence rate distribution at the RSR and its variation under different irradiation conditions were evaluated by means of specific induced activity measurements in samples of Al-0.1%Au reference material. Since then the core's configuration has been altered with the (re)introduction of another irradiation device, the pneumatic transfer tube 1 (PT-1). This paper aims at identifying and quantifying any changes in neutron fluence that such modification may have caused. (author)

A novel facility for 3D micro-irradiation of living cells in a controlled environment by MeV ions.

Science.gov (United States)

Mäckel, V; Meissl, W; Ikeda, T; Clever, M; Meissl, E; Kobayashi, T; Kojima, T M; Imamoto, N; Ogiwara, K; Yamazaki, Y

2014-01-01

We present a novel facility for micro-irradiation of living targets with ions from a 1.7 MV tandem accelerator. We show results using 1 MeV protons and 2 MeV He(2+). In contrast to common micro-irradiation facilities, which use electromagnetic or electrostatic focusing and specially designed vacuum windows, we employ a tapered glass capillary with a thin end window, made from polystyrene with a thickness of 1-2 μm, for ion focusing and extraction. The capillary is connected to a beamline tilted vertically by 45°, which allows for easy immersion of the extracted ions into liquid environment within a standard cell culture dish. An inverted microscope is used for simultaneously observing the samples as well as the capillary tip, while a stage-top incubator provides an appropriate environment for the samples. Furthermore, our setup allows to target volumes in cells within a μm(3) resolution, while monitoring the target in real time during and after irradiation.

Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag8+)

International Nuclear Information System (INIS)

Kaur, Amarjeet; Dhillon, Anju; Avasthi, D.K.

2013-01-01

Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10 10 to 10 12 ions cm −2 of 100 MeV silver (Ag 8+ ) ions. The temperature dependence of ac conductivity [σ m (ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag 8+ ) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation

X-RAY IRRADIATION OF H{sub 2}O + CO ICE MIXTURES WITH SYNCHROTRON LIGHT

Energy Technology Data Exchange (ETDEWEB)

Jiménez-Escobar, A.; Ciaravella, A.; Micela, G.; Cecchi-Pestellini, C. [INAF–Osservatorio Astronomico di Palermo, P.za Parlamento 1, I-90134 Palermo (Italy); Chen, Y.-J.; Huang, C.-H., E-mail: jimenezea@astropa.inaf.it, E-mail: ciarave@astropa.inaf.it, E-mail: giusi@astropa.inaf.it, E-mail: cecchi-pestellini@astropa.inaf.it, E-mail: asperchen@phy.ncu.edu.tw, E-mail: 101222023@cc.ncu.edu.tw [Department of Physics, National Central University, Jhongli District, Taoyuan City 32054, Taiwan (China)

2016-03-20

We irradiated a (4:1) mixture of water and carbon monoxide with soft X-rays of energies up to 1.2 keV. The experiments were performed using the spherical grating monochromator beamline at National Synchrotron Radiation Research Center in Taiwan. Both monochromatic (300 and 900 eV) and broader energy fluxes (250–1200 eV) were employed. During the irradiation, the H{sub 2}O + CO mixture was ionized, excited, and fragmented, producing a number of reactive species. The composition of the ice has been monitored throughout both the irradiation and warm-up phases. We identified several products, which can be related through a plausible chemical reaction scheme. Such chemistry is initiated by the injection of energetic photoelectrons that produce multiple ionization events generating a secondary electron cascade. The results have been discussed in light of a model for protoplanetary disks around young solar-type stars.

Chromosomal aberrations of the Chinese hamster cell line V79 after irradiation with X-rays and heavy ions

International Nuclear Information System (INIS)

Mueller, W.

1985-02-01

The study on hand examines chromosomal aberrations in Chinese hamster 79 cells. Irradiation involved a number of heavy ions ranging from neon to uranium with an energy variation between 0.3 and 20 MeV/u. Linear energy transfer ranged from 270 to 16,300 keV/μm. X-ray tests were run for reasons of comparison. Experiments showed the following results: 1) Aberration rate increases in dependence of nuclear charge number or LET resp. 2) The distribution of the chromosome-damage instances found differed markedly from corresponding measurements following irradiation with thinly ionizing radiation. In contrast to x-irradiation, it is possible, therefore, to obtain high aberration yields in preparations made immediately after irradiation. 3) The maximum of aberration yield after heavy-ion irradiation could be shown to occur as early as 4h after irradiation. This is true in x-irradiation for but small doses. 4) The radiation-sensitizing effect of caffeine and its action on the repair system of the cell could be confirmed for x-irradiation and could be described for heavy ions for the first time. 5) The radiation-protection effect of cysteamine could be re-affirmed for thinly ionizing radiation, however, it could not be verified for heavy ions. 6) Irradiation of cells by means of particles of a defined range supports the hypothesis that the particularly radiation-sensitive regions of the nucleus membrane constitute the cell's crucial target. (orig./MG) [de

Polypropylene compositional evolution under 3.5 MeV He{sup +} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Abdesselam, M., E-mail: abdesselam_m@yahoo.fr [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Muller, D. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France); Djebara, M.; Chami, A.C. [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Montgomery, P. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France)

2012-05-01

A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 {mu}m in thickness. The fluence ranges from 2 Multiplication-Sign 10{sup 12} to 3.5 Multiplication-Sign 10{sup 15} cm{sup -2}. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C({alpha}, {alpha})C) and hydrogen elastic recoil detection (H({alpha}, H){alpha}), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of {approx}5 Multiplication-Sign 10{sup 13} He{sup +} cm{sup -2}. The carbon depletion levels off at a fluence of {approx}5 Multiplication-Sign 10{sup 14} He{sup +} cm{sup -2} approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 Multiplication-Sign 10{sup -16} cm{sup 2}, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He{sup +} beam is made.

Anti-biofilm efficacy of 100 MeV gold ion irradiated polycarbonate against Salmonella typhi

Science.gov (United States)

Joshi, R. P.; Hareesh, K.; Bankar, A.; Sanjeev, G.; Asokan, K.; Kanjilal, D.; Dahiwale, S. S.; Bhoraskar, V. N.; Dhole, S. D.

2017-12-01

Polycarbonate (PC) films were irradiated by 100 MeV gold (Au7+) ions and characterized to study changes in its optical, chemical, surface morphology and thermal properties. UV-Visible spectroscopic results revealed the decrease in the optical band gap of PC after ion irradiation due to chain scission mainly at the carbonyl group which is corroborated by Fourier Transform Infrared spectroscopic results. X-ray diffractogram study showed decrease in crystallinity of PC film after irradiation. Scanning electron microscopic results showed the micropores formation in PC which results in surface roughening. Differential scanning calorimetric results revealed decrease in glass transition temperature indicating the decrease in molecular weight of PC corroborated by rheometric studies. PC films irradiated by 100 MeV Au7+ ions showed increased anti-biofilm activity against the human pathogen, Salmonella typhi (S. typhi). Morphology of S. typhi was changed due to stress of Au7+ irradiated PC. Cells length was increased with increasing fluences. The average cell length, cell volume and surface area was increased significantly (PBiofilm formation was inhibited ≈ 20% at lower fluence and 96% at higher fluence, which observed to be enhanced anti-biofilm activity in Au7+ irradiated PC.

EPR study of gamma and neutron irradiation effects on KU1, KS-4V and Infrasil 301 silica glasses

International Nuclear Information System (INIS)

Lagomacini, Juan C.; Bravo, David; Leon, Monica; Martin, Piedad; Ibarra, Angel; Martin, Agustin; Lopez, Fernando J.

2011-01-01

Electron paramagnetic resonance (EPR) studies have been carried out on KU1 and KS-4V high purity quartz glasses and commercial silica Infrasil 301, irradiated with gamma rays up to a dose of 11.6 MGy and neutron fluences of 10 21 and 10 22 n/m 2 . Gamma irradiations produce a much higher concentration of defect centres (mainly E', POR and NBOHC) for KU1 and I301 than for KS-4V silica. In contrast, neutron irradiation at the highest fluence produces similar concentrations in all silica types. These results agree to a good extent with those obtained in previous optical absorption measurements. Moreover, oxygen-related centres (POR and NBOHC) have been well characterized by means of electron paramagnetic resonance.

EPR study of gamma and neutron irradiation effects on KU1, KS-4V and Infrasil 301 silica glasses

Energy Technology Data Exchange (ETDEWEB)

Lagomacini, Juan C., E-mail: jc.lagomacini@uam.es [Dept. Fisica de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Bravo, David [Dept. Fisica de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Leon, Monica; Martin, Piedad; Ibarra, Angel [Materiales para Fusion, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Martin, Agustin [Dept. Fisica e Instalaciones, ETS Arquitectura UPM, E-28040 Madrid (Spain); Lopez, Fernando J. [Dept. Fisica de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain)

2011-10-01

Electron paramagnetic resonance (EPR) studies have been carried out on KU1 and KS-4V high purity quartz glasses and commercial silica Infrasil 301, irradiated with gamma rays up to a dose of 11.6 MGy and neutron fluences of 10{sup 21} and 10{sup 22} n/m{sup 2}. Gamma irradiations produce a much higher concentration of defect centres (mainly E', POR and NBOHC) for KU1 and I301 than for KS-4V silica. In contrast, neutron irradiation at the highest fluence produces similar concentrations in all silica types. These results agree to a good extent with those obtained in previous optical absorption measurements. Moreover, oxygen-related centres (POR and NBOHC) have been well characterized by means of electron paramagnetic resonance.

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

Science.gov (United States)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Yakimov, E. B.; Yang, Jiancheng; Ren, F.; Yang, Gwangseok; Kim, Jihyun; Kuramata, A.; Pearton, S. J.

2018-01-01

Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

Identification of defects in GaAs induced by 1 MeV electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Lai, S.T.; Nener, B.D.; Faraone, L.; Nassibian, A.G. [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M.A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

1993-12-31

This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

Identification of defects in GaAs induced by 1 MeV electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Lai, S T; Nener, B D; Faraone, L; Nassibian, A G [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

1994-12-31

This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

Positron annihilation lifetime characterization of oxygen ion irradiated rutile TiO2

Science.gov (United States)

Luitel, Homnath; Sarkar, A.; Chakrabarti, Mahuya; Chattopadhyay, S.; Asokan, K.; Sanyal, D.

2016-07-01

Ferromagnetic ordering at room temperature has been induced in rutile phase of TiO2 polycrystalline sample by O ion irradiation. 96 MeV O ion induced defects in rutile TiO2 sample has been characterized by positron annihilation spectroscopic techniques. Positron annihilation results indicate the formation of cation vacancy (VTi, Ti vacancy) in these irradiated TiO2 samples. Ab initio density functional theoretical calculations indicate that in TiO2 magnetic moment can be induced either by creating Ti or O vacancies.

Irradiation of a 2.5 m long SciFi module with 24 GeV/c protons to the dose profile expected in LHCb

CERN Document Server

Rodrigues Cavalcante, Ana Barbara; Glaser, Maurice; Joram, Christian; Karacson, Matthias; Kristic, Robert; Ravotti, Federico; Riggaz, Nicolas

2015-01-01

A 2.5 m long and 13 cm wide SciFi module, made of a 6-layer single fibre mat, was irradiated with 24 GeV/c protons in the new CERN PS IRRAD facility. The module is equipped with an aluminised mylar mirror and was previously carefully characterised in a test beam experiment in the CERN H8 zone. For the irradiation the module was tilted by $7 ^o$ w.r.t. the beam axis. A translation table allowed to move the module during the irradiation transverse to the beam in order to generate the dose distribution expected in LHCb after an integrated luminosity of 50 fb$^{-1}$, including the very sharp rise at the mirror end to 35 kGy. The dose distribution was derived from the generation of sodium isotopes in the aluminium strips placed in front of and behind the module. The dosimetry relies mainly on the activity of the long-lived Na-22 isotope, as the short-lived Na-24 gave in our specific case less precise results. The irradiated zone corresponds to an approximately 25 mm wide band running along the fibre mat, at 32 mm ...

Studying the destruction of various fluoropolymers caused by gamma - irradiation and MeV protons

International Nuclear Information System (INIS)

Allayarov, S.R.; Ol'khov, Yu.A.; Gordon, D.A.; Muntele, C.I.; Muntele, I.C.; Ila, D.; Dixon, D.A.; Kispert, L.D.; Nikolskij, V.G.

2007-01-01

While fluoropolymers are normally used as anti-adherent coating, they are intensely investigated for potential use in various radiation dosimeter applications as well as space technology. In order to understand the discrepancy between high chemical and thermal stability and low radiation stability of various fluoropolymers, we are bombarding them with 1 MeV protons to fluences up to 2·10 15 protons/cm 2 as well as subjected some of them to gamma-irradiation by dose of 10 kGy. During bombardment we are monitoring the emission of chemical species with a residual gas analyzer. Gamma-irradiated samples were tested by radio thermoluminescence method. The results we present here are a good indicator that material damage happens much earlier than 2·10 15 protons/cm 2 and that further work should be addressed at much smaller exposures. Radio thermoluminescence also can be used at small doses of irradiation (10-30 kGy). The thermomechanical curve of radiation-free polyvinyledenefluoride (PVDF) is characteristic for topologically di-block amorphous polymer of quasi-crossing structure. In the temperature range of from 173 K up to 228 K polymer is vitrified. The vitrification temperature of PVDF is 228 K. All molecular-relaxation and quantitative characteristics of PVDF were determined before and after its irradiation by protons. Protons caused significant changes in PVDF. From di-block amorphous it transformed in to amorphous-crystalline structure. An appreciable influence of dose at proton irradiation of polymer was revealed both on topological level and on molecular-relaxation one. (authors)

Microstructure evolution and hardness change in ordered Ni3V intermetallic alloy by energetic ion irradiation

International Nuclear Information System (INIS)

Hashimoto, A.; Kaneno, Y.; Semboshi, S.; Yoshizaki, H.; Saitoh, Y.; Okamoto, Y.; Iwase, A.

2014-01-01

Ni 3 V bulk intermetallic compounds with ordered D0 22 structure were irradiated with 16 MeV Au ions at room temperature. The irradiation induced phase transformation was examined by means of the transmission electron microscope (TEM), the extended X-ray absorption fine structure measurement (EXAFS) and the X-ray diffraction (XRD). We also measured the Vickers hardness for unirradiated and irradiated specimens. The TEM observation shows that by the Au irradiation, the lamellar microstructures and the super lattice spot in diffraction pattern for the unirradiated specimen disappeared. This TEM result as well as the result of XRD and EXAFS measurements means that the intrinsic D0 22 structure of Ni 3 V changes into the A1 (fcc) structure which is the lattice structure just below the melting point in the thermal equilibrium phase diagram. The lattice structure change from D0 22 to A1 (fcc) accompanies a remarkable decrease in Vickers microhardness. The change in crystal structure was discussed in terms of the thermal spike and the sequential atomic displacements induced by the energetic heavy ion irradiation

Cross sections from 800 MeV proton irradiation of terbium

Energy Technology Data Exchange (ETDEWEB)

Engle, J.W., E-mail: jwengle@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Mashnik, S.G.; Bach, H.; Couture, A.; Jackman, K.; Gritzo, R.; Ballard, B.D.; Fassbender, M.; Smith, D.M.; Bitteker, L.J.; Ullmann, J.L.; Gulley, M.S.; Pillai, C.; John, K.D.; Birnbaum, E.R. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Nortier, F.M., E-mail: meiring@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2012-11-02

Terbium foils were irradiated with 800 MeV protons to ascertain the potential for production of lanthanide isotopes of interest in medical, astrophysical, and basic science research and to contribute to nuclear data repositories. Isotopes produced in the foil were quantified by gamma spectroscopy. Cross sections for 35 isotopes produced in the irradiation are reported and compared with predictions by the MCNP6 transport code using the CEM03.03, Bertini and INCL + ABLA event generators. Our results indicate the need to accurately consider fission and fragmentation of relatively light target nuclei like terbium in the modeling of nuclear reactions at 800 MeV. The predictive power of the code was found to be different for each event generator tested but was satisfactory for most of the product yields in the mass region where spallation reactions dominate. However, none of the event generators' results are in complete agreement with measured data.

ORIGIN FOR IRRADIATION EFFECT OF 0．56GeV C6＋ ON CaVSn：YIG

Institute of Scientific and Technical Information of China (English)

熊宏齐; 侯明东; 等

1995-01-01

This paper presents numerous physical characteristics of Ca,V.Sn doped yttrium iron garnet(CaVSn:YIG) irradiated with 0.56GeV carbon ions delivered by the Heavy Ion Research Facility of Lanzhou (HIRFL).The reason for change of the magnetic properties of the samples induced by energetic carbon ions bombardment is discussed.By comparison of this results with the irradiation effects of YIG induced by eneregetic argon,krypton and xenon oibtained on the GANIL,Caen,France,it is concluded that the irradiation effect of 0.56GeV C6+ on CaVSn:YIG arises from the electronic energy losses.

Irradiation-induced doping of Bismuth Telluride Bi2Te3

International Nuclear Information System (INIS)

Rischau, Carl Willem

2014-01-01

Bismuth Telluride Bi 2 Te 3 has attracted enormous attention because of its thermoelectric and topological insulator properties. Regarding its bulk band structure Bi 2 Te 3 is a band insulator with an energy gap of around 150-170 meV. However, the native anti-site defects that are present in real samples always dope this band insulator and shift the chemical potential into the valence or conduction band. In this PhD, the Fermi surface of as-grown and electron irradiated p-type Bi 2 Te 3 single crystals has been investigated extensively using electrical transport experiments. For moderate hole concentrations (p ∼< 5 x 10 18 cm -3 ), it is confirmed that electrical transport can be explained by a six-valley model and the presence of strong Zeeman-splitting. At high doping levels (p≅5 x 10 18 cm -3 ), the hole concentrations determined from Hall and Shubnikov-de Haas (SdH) effect differ significantly which is attributed to an impurity/defect band introduced by the anti-site defects. In this work, we show that it is possible to dope p-type Bi 2 Te 3 in a very controlled manner using electron-irradiation by performing detailed in- and ex-situ electrical transport studies on samples irradiated at room and at low temperatures with 2.5 MeV electrons. These studies show that the defects induced at both irradiation temperatures act as electron donors and can thus be used to convert the conduction from p- to n-type. The point of optimal compensation is accompanied by an increase of the low-temperature resistivity by several orders of magnitude. Irradiation at room temperature showed that both the p-type samples obtained after irradiation to intermediate doses as well as the samples in which the conduction has been converted to n-type by irradiation, still have a well defined Fermi surface as evidenced by SdH oscillations. By studying the Hall coefficient in-situ during low temperature electron irradiation, the coexistence of electron- and hole-type carriers was evidenced

Defects in hyperpure Fe-based alloys created by 3 MeV e{sup -}-irradiation

Energy Technology Data Exchange (ETDEWEB)

Li, X H; Moser, P [CEA Centre d` Etudes de Grenoble, 38 (France). Dept. de Recherche Fondamentale sur la Matiere Condensee; Akamatsu, M; Van Duysen, C [Electricite de France (EDF), 77 - Ecuelles (France)

1994-12-31

Information about vacancy defects created in RPV (Reactor Pressure Vessels) steels after neutron irradiations are obtained via a simulation: the RPV steels are simulated by a series of high purity Fe-based alloys; the neutron irradiation is simulated by a 3 MeV electron irradiation; vacancy defects characteristics are obtained by positron lifetime techniques. Irradiations are made at 150 or 288 deg C, with a dose of 4*10{sup 19} e-/cm{sup 2}, and followed by isochronal annealing in the range 20-500 deg C. The observed vacancy defects are single trapped vacancies and small vacancy clusters, the size of which being lower than 10 empty atomic volumes (vacancy clusters containing more than 50 empty atomic volumes were never found). A large recovery step is observed between 200 and 400 deg C, after 150 deg C irradiation and attributed to vacancy-impurity detrapping, and also, vacancy cluster evaporation. The influence of C, Cu and Mo are presented. These results are in agreement with a model supposing, in pure Fe, single vacancy migration at -50 deg C and vacancy-impurity detrapping at 200 deg C. (authors). 4 figs., 15 refs.

Changes of structural and hydrogen desorption properties of MgH2 indused by ion irradiation

Directory of Open Access Journals (Sweden)

Kurko Sandra V.

2010-01-01

Full Text Available Changes in structural and hydrogen desorption properties of MgH2 induced by ion irradiation have been investigated. MgH2 powder samples have been irradiated with 45 keV B3+ and 120 keV Ar8+ions, with ion fluence of 1015 ions/cm2. The effects of ion irradiation are estimated by numerical calculations using SRIM package. The induced material modifications and their consequences on hydrogen dynamics in the system are investigated by XRD, particle size distribution and TPD techniques. Changes of TPD spectra with irradiation conditions suggest that there are several mechanisms involved in desorption process which depend on defect concentration and their interaction and ordering. The results confirmed that the near-surface area of MgH2 and formation of a substoichiometric MgHx (x<2 play a crucial role in hydrogen kinetics and that various concentrations of induced defects substantially influence H diffusion and desorption kinetics in MgH2. The results also confirm that there is possibility to control the thermodynamic parameters by controlling vacancies concentration in the system.

G2 arrest and apoptosis of cultured Raji cells by continuous low dose rate beta irradiation therapy with 188Re-perrhenate

International Nuclear Information System (INIS)

Yim, S. J.; Kim, E. H.; Lee, T. S.; Woo, K. S.; Jeong, W. S.; Choi, C. W.; Yim, S. M.

2001-01-01

Beta emitting radionuclide therapy gives exponentially decreasing radiation dose rate and results in cell death presumably by apoptosis. We observed changes in DNA content and apoptosis in relatively low dose rate beta irradiation. Raji cells were cultured and incubated with 188Re-perrhenate (3.7MBq, or 370MBq/ml) for 4 hours to give irradiation dose of 0.4, 4, or 40 Gy. After changing the culture media, cells were cultured for 2,4,8,16, and 24 hours. The cells were stained with Trypan blue, Annexin-V and Propidium Iodide (PI) to observe cell viability, cell membrane alternation by apoptosis and changes in DNA content respectively. Flowcytometry was done for Annexin-V and PI to quantitate apoptosis and necrosis in the irradiated cells. DAPI(4,6-diamidino-2-phenylindole) stain was also done to observe the damage in the nucleus. Cell viability decreased with an increasing radiation dose. Cells irradiated in 40 Gy showed early uptake of both Annexin-V and PI suggesting cell death by necrosis. Cells irradiated in 0.4 Gy showed delayed uptake of Annexin-V only, and later on PI uptake suggesting cell death mainly by apoptosis. The cells irradiated in 0.4 Gy showed G2 arrest in 16 hours after irradiation, but the cells irradiated in 40 Gy showed early DNA fragmentation within 2 hours after irradiation. In DAPI stain, early nucleus damage was observed in the cells irradiated in 40 Gy. On the other hand, slowly increasing apoptotic bodies were observed in the cells irradiated in 0.4 Gy. These results suggest that continuous low-dose irradiation induces G2 arrest and progressive apoptosis in cells while continuous high-dose irradiation induces rapid necrosis. Therefore, we expect therapeutic effect by continuous low-dose rate irradiation with beta emitting radiopharmaceuticals

Behavior of high resistance to He{sup 2+} induced irradiation damage in metallic glass

Energy Technology Data Exchange (ETDEWEB)

Wang, Bin [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Mei, Xianxiu, E-mail: xxmei@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Hou, Wenjing; Wang, Younian [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Wang, Zhiguang [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Dong, Chuang [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China)

2013-10-01

Highlights: •Metallic glasses and W were irradiated with 500 keV He{sup 2+} at different fluences. •Metallic glasses could maintain amorphous state at different irradiation fluences. •The resistance to He{sup 2+} irradiation of metallic glasses was superior to the one in W metal. •Cu- and Zr-based metallic glasses had better resistance to He{sup 2+} irradiation. -- Abstract: This study details the irradiation of various metallic glasses ((Cu{sub 47}Zr{sub 45}Al{sub 8}){sub 98.5}Y{sub 1.5}, Zr{sub 64}Cu{sub 17.8}Ni{sub 10.7}Al{sub 7.5}, Co{sub 61.2}B{sub 26.2}Si{sub 7.8}Ta{sub 4.8}) and metallic W using He{sup 2+} ions with an energy of 500 keV at irradiation fluences of 2 × 10{sup 17}, 1 × 10{sup 18} and 2 × 10{sup 18} ions/cm{sup 2} to investigate the radiation-resistant properties of these metallic glasses compared to the conventional irradiation-resistant material W. These three metallic glasses were able to maintain an amorphous state during these irradiation fluences. There was no significant irradiation damage at the low irradiation fluence. When the irradiation fluence was increased to 2 × 10{sup 18} ions/cm{sup 2}, a damage layer appeared up to a distance corresponding to the range of the ions away from the surfaces of the Cu- and Zr-based metallic glasses without any visible damage on the surface. Significant surface stripping damage appeared in the Co-based metallic glass. Relatively speaking, surface layer peeling appeared in metallic W along the crystal boundary at a fluence of 1 × 10{sup 18} ions/cm{sup 2}. When the fluence was increased to 2 × 10{sup 18} ions/cm{sup 2}, multilayer peeling, stripping, etc. appeared. The roughness of the Cu- and Zr-based metallic glass showed further smoothing with increasing fluence, while the opposite occurred in the Co-based metallic glass. Within the wavelength range of 400–1700 nm, after irradiation of He{sup 2+} at a fluence of 1 × 10{sup 18} ions/cm{sup 2}, the reflectance of the Cu-based and Co

Structural, morphological and optical investigations on electron-beam irradiated PbF2-TeO2-B2O3-Eu2O3 glasses

Science.gov (United States)

Wagh, Akshatha; Petwal, Vikash; Dwivedi, Jishnu; Upadhyaya, V.; Raviprakash, Y.; Kamath, Sudha D.

2016-09-01

Combined structural, optical and morphological studies were carried out on Eu2O3 doped PbF2-TeO2-B2O3 glass samples, before and after being subjected to electron beam of energy 7.5 MeV. XRD confirmed the amorphous nature of the glasses even after 150 kGy electron beam irradiation. Densities of the irradiated samples showed slightly greater values when compared to their respective values before irradiation, which proved the increase in the compaction of the network. The intensities of the three prominent bands; B-O-B linkages, BO4 units and BO3 units of FT-IR spectra, of the titled glasses, showed slight decrease after electron beam irradiation. The decrement in the values of energy band gap and shift in cut-off wavelength towards red edge, proved the formation of color centers in the glass network after irradiation. The change in Hunter L values, through color measurement was a proof for the Farbe/color/absorption centers created in the glass sites after irradiation.

Changes in RBE of 14-MeV (d+T) neutrons for V79 cells irradiated in air and in a phantom: Is RBE enhanced near the surface?

International Nuclear Information System (INIS)

Schalla, S.; Herskind, C.; Hoever, K.H.; Lorenz, W.J.; Hahn, E.W.

1998-01-01

The relative biological effectiveness (RBE) for inactivation of V79 cells was determined as function of dose at the Heidelberg 14-MeV (d+T) neutron therapy facility after irradiation with single doses in air and at different depths in a therapy phantom. Furthermore, to assess the reproducibility of RBE determinations in different experiments we examined the relationship between the interexperimental variation in radiosensitivity towards neutrons with that towards low LET 60 Co photons. Clonogenic survival of V79 cells was determined using the colony formation assay. The cells were irradiated in suspension in small volumes (1.2 ml) free in air or at defined positions in the perspex phantom. Neutron doses were in the range, D t =0.5-4 Gy. 60 Co photons were used as reference radiation. The radiosensitivity towards neutrons varied considerably less between individual experiments than that towards photons and also less than RBE. However, the mean sensitivity of different series was relatively constant. RBE increased with decreasing dose per fraction from RBE=2.3 at 4 Gy to RBE=3.1 at 0.5 Gy. No significant difference increased with decreasing dose per fraction from RBE=2.3 at 4 Gy to RBE=3.1 at 0.5 Gy. No significant difference in RBE could be detected between irradiation at 1.6 cm and 9.4 cm depth in the phantom. However, an approximately 20% higher RBE was found for irradiation free in air compared with inside the phantom. Combining the two effects, irradiation with 0.5 Gy free in air yielded an approximately 40% higher RBE than a dose of 2 Gy inside the phantom. The measured values of RBE as function of dose per fraction within the phantom is consistent with the energy of the neutron beam. The increased RBE free in air, however, is greater than expected from microdosimetric parameters of the beam. (orig./MG) [de

Short Communication on "In-situ TEM ion irradiation investigations on U3Si2 at LWR temperatures"

Science.gov (United States)

Miao, Yinbin; Harp, Jason; Mo, Kun; Bhattacharya, Sumit; Baldo, Peter; Yacout, Abdellatif M.

2017-02-01

The radiation-induced amorphization of U3Si2 was investigated by in-situ transmission electron microscopy using 1 MeV Kr ion irradiation. Both arc-melted and sintered U3Si2 specimens were irradiated at room temperature to confirm the similarity in their responses to radiation. The sintered specimens were then irradiated at 350 °C and 550 °C up to 7.2 × 1015 ions/cm2 to examine their amorphization behavior under light water reactor (LWR) conditions. U3Si2 remains crystalline under irradiation at LWR temperatures. Oxidation of the material was observed at high irradiation doses.

Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons

CERN Document Server

Holmkvist, William

2014-01-01

Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collision. The usual behavior of the silicon detectors is that they get type inverted and an increase in the depletion voltage can be seen after exposed to significant amounts of radiation. In contrast n-type Magnetic Czochralski (MCz) silicon doesn’t follow FZ silicons pattern of getting type inverted when it comes to high energy particle irradiation, in the range of GeV. However it was observed that MCz silicon diodes that had been irradiated with 23 MeV protons followed the FZ silicon behavior and did type invert. The aim of the project is to find out how the depletion voltage of MCz silicon changes after being irradiated by 70 MeV at fluencies of 1E13, 1E14 and 5E14 neq/cm2, to give a further insight of at what en...

Experimental and theoretical study of radionuclide production on the electronuclear plant target and construction materials irradiated by 1.5 GeV and 130 MeV protons

International Nuclear Information System (INIS)

Titarenko, Yu.E.; Karpikhin, E.I.; Smolyakov, A.F.; Igumnov, M.M.; Stepanov, N.V.; Kazaritsky, V.D.; Batyaev, V.F.; Shvedov, O.V.; Mashnik, S.G.; Gabriel, T.A.

1997-01-01

Experimental and calculated results are presented for the yields of residual nuclei in 63 Cu, 65 Cu, 206 Pb, 207 Pb, 208 Pb, and 209 Bi targets irradiated to 1.5 GeV and 130 MeV protons and in 59 Co target irradiated to 1.2 GeV protons extracted from the ITEP accelerator. The nuclide yields were found by gamma-spectrometry with a GC-2518 Ge detector, a 1510 module, and a S-100 plate that, as an integral part of IBM PC, emulates a multichannel analyzer. The gamma-spectrometry 60 Co 1332.5 keV line energy resolution was 1.8 keV. The gamma-spectra were processed by the ASPRO code. The SIGMA code with the GDISP radionuclide database was used to identify the gamma-lines and to calculate the respective cross sections. The monitor reactions was 27 Al(p,3pn) 24 Na. The experimental generation cross sections of end products are compared with the respective values calculated by the HETC, INUCL, and CEM95 codes that simulate hadron-nucleus interactions. 12 refs., 3 figs., 7 tabs

Synthesis of gold and silver nanoparticles by electron irradiation at 5-15 keV energy

Energy Technology Data Exchange (ETDEWEB)

Mahapatra, S K; Bogle, K A; Dhole, S D; Bhoraskar, V N [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Pune-411007 (India)

2007-04-04

Thin coatings ({approx}10 {mu}m) made from a mixture of polyvinyl alcohol (PVA) and HAuCl{sub 4} or PVA and AgNO{sub 3} on quartz plates were irradiated with 5-15 keV electrons, at room temperature. The electron energy was varied from coating to coating in the range of 5-15 keV, but electron fluence was kept constant at {approx}10{sup 15} e cm{sup -2}. Samples were characterized by the UV-vis, XRD, SEM and TEM techniques. The plasmon absorption peaks at {approx}511 and {approx}442 nm confirmed the formation of gold and silver nanoparticles in the respective electron-irradiated coatings. The XRD, SEM and TEM measurements reveal that the average size of the particles could be tailored in the range of 130-50 nm for gold and from 150-40 nm for silver by varying the electron energy in the range of 5-15 keV. These particles of gold and silver embedded in the polymer could also be separated by dissolving the coatings in distilled water.

Damage accumulation in MgO irradiated with MeV Au ions at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Bachiller-Perea, Diana, E-mail: dianabachillerperea@gmail.com [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, 28049, Madrid (Spain); Dpto. de Física Aplicada, Universidad Autónoma de Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Debelle, Aurélien, E-mail: aurelien.debelle@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Thomé, Lionel [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Behar, Moni [Instituto de Física, Universidade Federal do Rio Grande do Sul, C.P. 15051, 91501-970, Porto Alegre, RS (Brazil)

2016-09-15

The damage accumulation process in MgO single crystals under medium-energy heavy ion irradiation (1.2 MeV Au) at fluences up to 4 × 10{sup 14} cm{sup −2} has been studied at three different temperatures: 573, 773, and 1073 K. Disorder depth profiles have been determined through the use of the Rutherford backscattering spectrometry in channeling configuration (RBS/C). The analysis of the RBS/C data reveals two steps in the MgO damage process, irrespective of the temperature. However, we find that for increasing irradiation temperature, the damage level decreases and the fluence at which the second step takes place increases. A shift of the damage peak at increasing fluence is observed for the three temperatures, although the position of the peak depends on the temperature. These results can be explained by an enhanced defect mobility which facilitates defect migration and may favor defect annealing. X-ray diffraction reciprocal space maps confirm the results obtained with the RBS/C technique. - Highlights: • High-temperature MeV-ion irradiated MgO exhibits a two-step damage process. • The occurrence of the second step is delayed with increasing temperature. • The damage level decreases with increasing temperature. • A shift of the damage peak is observed with increasing fluence. • A high defect mobility at high temperatures in MgO is clearly evidenced.

Anomalous effects in silicon solar cell irradiated by 1-MeV protons

Science.gov (United States)

Kachare, R.; Anspaugh, B. E.

1989-01-01

Several silicon solar cells having thicknesses of approximately 63 microns, with and without back-surface fields (BSF), were irradiated with 1-MeV protons having fluences between 10 to the 10th and 10 to the 12th sq cm. The irradiations were performed using both normal and isotropic incidence on the rear surfaces of the cells. It was observed that after irradiation with fluences greater than 10 to the 11th protons/sq cm, all BSF cells degraded at a faster rate than cells without BSF. The irradiation results are analyzed using a model in which irradiation-induced defects in the BSF region are taken into account. Tentatively, it is concluded that an increase in defect density due to the formation of aluminum and proton complexes in BSF cells is responsible for the higher-power loss in the BSF cells compared to the non-BSF cells.

Evaluation of ferritic alloy Fe-2-1/4Cr-1Mo after neutron irradiation - microstructure development

International Nuclear Information System (INIS)

Gelles, D.S.

1984-05-01

Microstructural examinations are reported for nine specimen conditions of 2-1/4Cr-1Mo steel which had been irradiated by fast neutrons over the temperature range 390 to 510 0 C. Two heats of material were involved, each with a different preirradiation heat treatment, one irradiated to a peak fluence of 5.1 x 10 22 n/cm 2 (E > 0.1 MeV) or 24 dpa and the other to 2.4 x 10 23 n/cm 2 (E > 0.1 MeV) or 116 dpa. Void swelling is found following irradiation at 400 0 C in both conditions and to 480 0 C in the higher fluence conditions. Concurrently dislocation structure and precipitation formed. Peak void swelling, void density, dislocation density and precipitate number density developed at the lowest temperature, approx. 400 0 C, whereas mean void size, and mean precipitate size increased with increasing irradiation temperature. The examination results are used to provide interpretation of in-reactor creep, density change and post irradiation tensile behavior

Studies of frequency dependent C-V characteristics of neutron irradiated p+-n silicon detectors

International Nuclear Information System (INIS)

Li, Zheng; Kraner, H.W.

1990-10-01

Frequency-dependent capacitance-voltage fluence (C-V) characteristics of neutron irradiated high resistivity silicon p + -n detectors have been observed up to a fluence of 8.0 x 10 12 n/cm 2 . It has been found that frequency dependence of the deviation of the C-V characteristic (from its normal V -1/2 dependence), is strongly dependent on the ratio of the defect density and the effective doping density N t /N' d . As the defect density approaches the effective dopant density, or N t /N' d → 1, the junction capacitance eventually assumes the value of the detector geometry capacitance at high frequencies (f ≤ 10 5 Hz), independent of voltage. A two-trap-level model using the concept of quasi-fermi levels has been developed, which predicts both the effects of C-V frequency dependence and dopant compensation observed in this study

Neutron-irradiation effects on SiO2 and SiO2-based glass ceramics

International Nuclear Information System (INIS)

Porter, D.L.; Pascucci, M.R.; Olbert, B.H.

1981-01-01

A preliminary data base to assess the radiation-damage resistance of some glass ceramic materials has been gathered. These are rather complex materials, both in structure and composition, but possess many of those properties required for structural, insulator applications in fusion-reactor design. Property measurements were made after fast (E > 0.1 MeV) neutron irradiations of approx. 2.4 x 10 22 n/cm 2 at 400 0 C and 550 0 C. The results have shown general resistance to changes in thermal expansion and most did not eperience severe loss of mechanical integrity. The maximum volume expansion occurred in several of the fluorophlogapite-based glass ceramics (approx. 3.0%). Several observations demonstrated differences between the effects of neutron and electron irradiation; irradiation conditions proptotypic of projected reactor uses need be considered for optimum materials selection

Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons

Energy Technology Data Exchange (ETDEWEB)

Arutyunov, Nikolay [Department of Physics, Martin Luther University Halle (Germany); Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Elsayed, Mohamed [Department of Physics, Martin Luther University Halle (Germany); Faculty of Science, Department of Physics, Minia University (Egypt); Krause-Rehberg, Reinhard [Department of Physics, Martin Luther University Halle (Germany); Abrosimov, Nikolay [Leibniz Institute for Crystal Growth, Berlin (Germany); Kozlovski, Vitalii [St. Petersburg State Polytechnical University (Russian Federation)

2017-07-15

For the first time the samples, cut from the same wafer of crystals of float-zone silicon, n-FZ-Si(P) and n-FZ-Si(Bi), were subjected to irradiation with 0.9-MeV electrons and 15-MeV protons at RT for studying them by low-temperature positron annihilation lifetime spectroscopy. Measurements of Hall effect have been used for the materials characterization. The discussion is focused on the open vacancy volume (V{sub op}) of the thermally stable group-V-impurity-vacancy complexes comprising the phosphorus atoms; the bismuth-related vacancy complexes are briefly considered. The data of positron probing of PV pairs (E-centers), divacancies, and the thermally stable defects in the irradiated n-FZ-Si(P) materials are compared. Beyond a reliable detecting of the defect-related positron annihilation lifetime in the course of isochronal annealing at ∝ 500 C, the recovery of concentration of phosphorus-related shallow donor states continues up to ∝650-700 C. The open vacancy volumes V{sub op} to be characterized by long positron lifetimes Δτ{sub 2} ∝271-289 ps in (gr.-V-atom)-V{sub op} complexes are compared with theoretical data available for the vacancies, τ(V{sub 1}), and divacancies, τ(V{sub 2}). The extended semi-vacancies, 2V{sub s-ext}, and relaxed vacancies, 2V{sub inw}, are proposed as the open volume V{sub op} in (gr.-V-atom)-V{sub op} complexes. It is argued that at high annealing temperature the defect P{sub s}-V{sub op}-P{sub s} is decomposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In situ study of the effects of heavy-ion irradiation on co-evaporated CoSi2 films

International Nuclear Information System (INIS)

Allen, C.W.; Smith, D.A.

1990-11-01

The in situ ion irradiation capability of Argonne's HVEM-Tandem User Facility has been employed to determine the effects of 1.5 MeV Kr + irradiation and 300 kV electron irradiation on the crystallization of as-deposited and of partially crystallized 40 nm thick films of CoSi 2 . Ion fluxes ranged from 8.5 x 10 14 to 6.8 x 10 15 m -2 s -1 for which beam heating effects may be neglected. The maximum electron flux at 300 kV was 0.8 x 10 23 m -2 s -1 . The maximum temperature at which crystalline CoSi 2 is amorphized by the ion irradiation of flux = 6.8 x 10 15 m -2 s -1 is between 250 and 280 K. At higher temperatures amorphous material crystallizes by growth of any preexisting crystals and by classical nucleation and growth, with radial growth rates which are proportional to ion flux. The average degree of transformation per ion is 4 x 10 -26 m 3 per ion. Thermally induced crystallization of as-deposited films occurs above approximately 420 K. For ion doses at least as low as 3.4 x 10 16 m -2 ion irradiation at 300 K promotes thermal crystallization at 450 K, by virtue of enhanced apparant nucleation and at large doses, by enhanced growth rate. 8 refs., 2 figs

Irradiation damage to the gonads caused by radiotherapy of benign diseases. Pt. 2

International Nuclear Information System (INIS)

Hassenstein, E.; Nuesslin, F.

1976-01-01

The irradiation damage to the gonads caused by the radiotherapy of parotiditis and mastitis and of cheloids was determined partially under different irradiation methods. The measurements were carried out with LiF dosimeters in the Alderson phantom with a tube tension of 250 kV for the inflammatory diseases and 55 kV for the cheloids. The gonad dose measured at the surface was within the range of hundreths of permille for the parotiditis, for the mastitis it was between tenths of permille and 2 0 / 00 depending on the therapy method. The gonad dose of the cheloid irradiations showed a clear relation to the distance between radiation source and gonads. The importance of radiation protection is emphasized. (orig.) [de

Defect structures in YBa/sub 2/Cu/sub 3/O/sub 7-x/ produced by electron irradiation

International Nuclear Information System (INIS)

Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

1988-01-01

Defect structures in YBa/sub 2/Cu/sub 3/O/sub 7-x/ produced by electron irradiation at 300 K were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to be 152 keV and 131 keV (+- 7 keV) in directions near the a and b (b>a) axes (both perpendicular to c, the long axis in the orthorhombic structure), respectively. During above threshold irradiations in an electron flux of 3x10/sup 18/ cm/sup -2/ s/sup -1/, extended defects were observed to form and grow to sizes of 10-50 nm over 1000 s in material thickness 20-200 nm. Such low electron threshold energies suggest oxygen atom displacements with recoil energies near 20 eV. The observation of movement of twin boundaries during irradiation just above threshold suggests movement of the basal plane oxygen atoms by direct displacement or defect migration processes. Crystals irradiated above threshold were observed after about 24 hours to have transformed to a structure heavily faulted on planes perpendicular to the c axis

Irradiation Effect of Argon Ion on Interfacial Structure Fe(2nm/Si(tsi=0.5-2 nm Multilayer thin Film

Directory of Open Access Journals (Sweden)

S. Purwanto

2010-04-01

Full Text Available Investigation includes formation of interfacial structure of Fe(2nm/Si(tSi= 0.5-2 nm multilayer thin film and the behavior of antiferromagnetic coupling between Fe layers due to Argon ion irradiation was investigated. [Fe(2nm/Si]30 multilayers (MLs with a thickness of Si spacer 0.5 - 2 nanometer were prepared on n-type (100 Si substrate by the helicon plasma sputtering method. Irradiation were performed using 400keV Ar ion to investigate the behavior of magnetic properties of the Fe/Si MLs. The magnetization measurements of Fe/Si MLs after 400keV Ar ion irradiation show the degradation of antiferromagnetic behavior of Fe layers depend on the ion doses. The Magnetoresistance (MR measurements using by Four Point Probe (FPP method also confirm that MR ratio decrease after ion irradiation. X-ray diffraction (XRD patterns indicate that the intensity of a satellite peak induced by a superlattice structure does not change within the range of ion dose. These results imply that the surface of interface structures after ion irradiation become rough although the layer structures are maintained. Therefore, it is considered that the MR properties of Fe/Si MLs also are due to the metallic superlattice structures such as Fe/Cr and Co/Cu MLs.

Positron trap centers in x-ray and γ-ray irradiated SiO2

International Nuclear Information System (INIS)

Khatri, R.; Asoka-Kumar, P.; Nielsen, B.; Roellig, L.O.; Lynn, K.G.

1993-01-01

Using Doppler broadening annihilation spectroscopy, we investigated the properties of irradiated samples of SiO 2 /Si(100) with 117 nm thick oxide layer, grown in dry O 2 on p- and n-type substrates. These samples were irradiated with γ rays and x rays at doses in the range of 7x10 4 --9x10 6 rad and 50--2000 mJ/cm 2 , respectively. The changes observed in the Doppler broadening line shape parameter after irradiation and its recovery during isochronal annealing were used to obtain an activation energy of 1.48--1.61 eV required for annealing the defects

Post irradiation examination of type 316 stainless steels for in-pile Oarai water loop No.2 (OWL-2)

International Nuclear Information System (INIS)

Shibata, Akira; Kimura, Tadashi; Nagata, Hiroshi; Aoyama, Masashi; Kanno, Masaru; Ohmi, Masao

2010-11-01

The Oarai water loop No.2 (OWL-2) was installed in JMTR in 1972 for the purpose of irradiation experiments of fuel element and component material for light water reactors. Type 316 stainless steels (SSs) were used for tube material of OWL-2 in the reactor. But data of mechanical properties of highly irradiated Type 316 SSs has been insufficient since OWL-2 was installed. Therefore surveillance tests of type 316 SSs which were irradiated up to 3.4x10 25 n/m 2 in fast neutron fluence (>1 MeV) were performed. Meanwhile type 316 stainless steel (SS) is widely used in JMTR such as other irradiation apparatus and irradiation capsule, and additional data of type 316 SSs irradiated higher is required. Therefore post irradiation examinations of surveillance specimens made of type 316 SSs which were irradiated up to 1.0x10 26 n/m 2 in fast neutron fluence were performed and reported in this paper. In this result of surveillance tests of type 316 SSs irradiated up to 1.0x10 26 n/m 2 , tensile strength increase with increase of Neutron fluence and total elongation decreased with increase of Neutron fluence compared to unirradiated specimens and specimens irradiated up to 3.4x10 25 n/m 2 . This tendency has good agreement with results of 10 24 - 10 25 n/m 2 in fast neutron fluence. More than 37% in total elongation was confirmed in all test conditions. It was confirmed that type 316 SS irradiated up to 1.0x10 26 n/m 2 in fast neutron fluence has enough ductility as structure material. (author)

Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

Science.gov (United States)

Jaiswal, Manoj Kumar; Kanjilal, D.; Kumar, Rajesh

2013-11-01

Thin films of tin(IV) oxide (SnO2) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au8+ using 1 pnA current at normal incidence with ion fluences varying from 1 × 1011 ions/cm2 to 5 × 1013 ions/cm2. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV-Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm-1 in FTIR spectrum confirmed the O-Sn-O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO2 were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

Tensile properties and microstructure of helium injected and reactor irradiated V-20 Ti

International Nuclear Information System (INIS)

Tanaka, M.P.; Bloom, E.E.; Horak, J.A.

1980-01-01

The objective of this work was to determine the effect of preinjected helium followed by neutron irradiation on the mechanical properties and microstructure of V-20% Ti. These results will be used for the evaluation of the potential use of V-20% Ti in fusion reactor service

Effect of neutron irradiation on single crystal V3Si

International Nuclear Information System (INIS)

Viswanathan, R.; Caton, R.; Cox, D.E.; Guha, A.; Sarachik, M.P.; Smith, F.W.; Testardi, L.R.

1977-01-01

We We have investigated the effect of successive neutron irradiation up to a fluence of approximately 2 x 10 19 n/cm 2 , by measurements of heat capacity, susceptibility, resistivity, acoustic velocity and neutron diffraction in a single crystal V 3 Si. We find that for low level doses (phi t greater than or equal to 3.5 x 10 18 n/cm 2 ) (a) the structural transformation is very sensitive, whereas the suerconducting transition temperature, T/sub c/, is hardly affected, and (b) except for low temperature heat capacity, most of the other measurements show very little change. For the highest fluence of 2 x 10 19 n/cm 2 used to date, the T/sub c/ dropped to 7.5 K with large changes in the linear heat capacity coefficient, magnetic susceptibility and sound velocity. These results are discussed briefly in this paper

V79 survival following simultaneous or sequential irradiation by 15-MeV neutrons and 60Co photons

International Nuclear Information System (INIS)

Higgins, P.D.; DeLuca, P.M. Jr.; Pearson, D.W.; Gould, M.N.

1983-01-01

A unique tandem source irradiation facility, composed of an intense d-T neutron source and a 60 Co teletherapy unit, was used to investigate biological responses for different neutron/photon configurations. V79 Chinese hamster cells, attached as monolayers in log-phase growth, were irradiated at 37 degrees C by either 14.8-MeV neutrons, 60 Co, or a mixture of 40% neutrons and 60% photons in simultaneous or sequential application. Measurements of cell survival indicate an increased effectiveness in cell killing for simultaneously administered neutrons and photons compared to that measured or predicted for sequentially applied beam modalities. An understanding of the magnitude of these interactive effects is important both for calculating accurate effective doses for neutron radiotherapy of deep-seated tumors, for which the photon component is appreciable, and for determination of environmental hazards to people occupationally exposed to mixtures of photons and neutrons

V79 survival following simultaneous or sequential irradiation by 15-MeV neutrons and 60Co photons

International Nuclear Information System (INIS)

Higgins, P.D.; DeLuca, P.M. Jr.; Pearson, D.W.; Gould, M.N.

1983-01-01

A unique tandem source irradiation facility, composed of an intense d-T neutron source and a 60 Co teletherapy unit, was used to investigate biological responses for different neutron/photon configurations. V79 Chinese hamster cells, attached as monolayers in log-phase growth, were irradiated at 37 0 C by either 14.8-MeV neutrons, 60 Co, or a mixture of 40% neutrons and 60% photons in simultaneous or sequential application. Measurements of cell survival indicate an increased effectiveness in cell killing for simultaneously administered neutrons and photons compared to that measured or predicted for sequentially applied beam modalities. An understanding of the magnitude of these interactive effects is important both for calculating accurate effective doses for neutron radiotherapy of deep-seated tumors, for which the photon component is appreciable, and for determination of environmental hazards to people occupationally exposed to mixtures of photons and neutrons

High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

International Nuclear Information System (INIS)

Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

1991-01-01

The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag{sup 8+})

Energy Technology Data Exchange (ETDEWEB)

Kaur, Amarjeet, E-mail: amarkaur@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dhillon, Anju [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Avasthi, D.K. [Inter University Accelerator Center (IUAC), Aruna Asaf Ali Road, New Delhi 110067 (India)

2013-07-15

Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10{sup 10} to 10{sup 12} ions cm{sup −2} of 100 MeV silver (Ag{sup 8+}) ions. The temperature dependence of ac conductivity [σ{sub m}(ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag{sup 8+}) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation.

Irradiation damage in gamma lithium aluminate - LiAlO2

International Nuclear Information System (INIS)

Auvray-Gely, M.H.

1989-01-01

Single crystals of gamma lithium aluminate (of tetragonal structure) are irradiated) with various projectiles (electrons, He ions, protons, X and gamma photons) and we used (i) electronic paramagnetic resonance (EPR) and optical absorption to detect the defects produced, and (ii) transmission electron microscopy (TEM). The lithium aluminate single crystals irradiated with electrons or ions contain five different paramagnetic defects. Each of them has several anisotropic configurations whose EPR signals (i) have a Lande factor close to 2, (ii) exhibit a resolved hyperfine structure and (iii) are identical only when the static magnetic field is along /001/. In addition, four optical absorption bands appear in the range 1-6 eV in the same irradiation conditions. But only three among the five paramagnetic defects and one of the optical bands appear in X-and gamma-ray irradiated samples. Using these observations, we discuss the nature of the detected defects and we conclude about the type of their production mechanism. Particularly, we assign a six-line EPR signal and an optical band in the ultraviolet range to the F + -centre. We compare this hypothesis to a defect model based on the computation of approximate electronic wave functions using the variational method. Our TEM study shows that when gamma-LiAlO 2 single crystals are irradiated with 1 MeV electrons (fluence: 10 20 electrons/sqcm), tridimensional defects (of mean dimension 100 nm) appear. At lower energies, the defect production is hidden by a thermal effect that is sufficient to induce the evaporation of lithium oxyde and the formation of LiAl 5 0 8 [fr

Recovery of point defects, created by neutron irradiation at 20 K, in ordered and disordered FeCo and FeCo2V alloys

International Nuclear Information System (INIS)

Dinhut, J.F.; Riviere, J.P.

1978-01-01

Samples of FeCo and FeCo2V ordered and disordered alloys were irradiated by fission neutrons at liquid hydrogen temperature up to an integrated dose of 7 x 10 17 n/cm 2 (E > 1 MeV), and then annealed. During the two first important recovery stages below 200 K, the annealing of about 60% of the radiation induced resistivity occurs. These two steps are respectively assigned to close pair recombination and rearrangement and detrapping of interstitials. During the annealing of the two other stages observed above 200 K, the migration and elimination of interstitials and vacancies involves ordering phenomena. These results and their interpretations are discussed in relation to those of pure metals and to those previously found in ordered and disordered alloys of the same type. (author)

EPR and cathodoluminescence of defects in diamond irradiated by nickel ions with energy of 335 MeV

International Nuclear Information System (INIS)

Varichenko, V.S.; Martinovich, V.A.; Filipp, A.Z.; Didyk, A.Yu.

1995-01-01

Defect production in natural diamond irradiated by 335 MeV Ni ions within a dose range of 5·10 12 - 5·10 14 cm -2 has been studied by EPR and cathodoluminescence techniques. It is shown that the high energy ion irradiation leads to the appearance of modified track like one-dimensional structures with nontetrahedral coordination of atoms. A mechanism of microwave conductivity in modified structures of irradiated samples discussed in frame of a model of mobile quasi-particles of corresponding paramagnetic centres. Peculiarities of concentration distributions of paramagnetic centres corresponding to ion-modified structures and cathodoluminescence centres through the irradiated layer are connected with track channeling and stopped of a part of ions because of their elastic collisions with lattice atoms during ion stopping. (author). 18 refs., 5 figs

Study of properties of the plastic scintillator EJ-260 under irradiation with 150 MeV protons and 1.2MeV gamma-rays

Science.gov (United States)

Dormenev, V.; Brinkmann, K.-T.; Korjik, M.; Novotny, R. W.

2017-11-01

One of the most critical aspects for the application of a scintillation material in high energy physics is the degradation of properties of the material in an environment of highly ionizing particles in particular due to hadrons. There are presently several detector concepts in consideration being based on organic scintillator material for fast timing of charged particles or sampling calorimeters. We have tested different samples of the organic plastic scintillator EJ-260 produced by the company Eljen Technology (Sweetwater, TX, USA). The ongoing activity has characterized the relevant parameters such as light output, kinetics and temperature dependence. The study has focused on the change of performance after irradiation with 150 MeV protons up to an integral fluence of 5·1013 protons/cm2 as well as with a strong 60Co γ-source accumulating an integral dose of 100 Gy. The paper will report on the obtained results.

Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

International Nuclear Information System (INIS)

Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

1996-01-01

The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

Identification of ultra-fine Ti-rich precipitates in V-Cr-Ti alloys irradiated below 300 deg. C by using positron CDB technique

International Nuclear Information System (INIS)

Fukumoto, Ken-ichi; Matsui, Hideki; Ohkubo, Hideaki; Tang, Zheng; Nagai, Yasuyoshi; Hasegawa, Masayuki

2008-01-01

Irradiation-induced Ti-rich precipitates in V-Ti and V-4Cr-4Ti alloys are studied by TEM and positron annihilation methods (positron lifetime, and coincidence Doppler broadening (CDB)). The characteristics of small defect clusters formed in V alloys containing Ti at irradiation temperatures below 300 deg. C have not been identified by TEM techniques. Strong interaction between vacancy and Ti solute atoms for irradiated V alloys containing Ti at irradiation temperatures from 220 to 350 deg. C are observed by positron lifetime measurement. The vacancy-multi Ti solute complexes in V-alloys containing Ti are definitely identified by using CDB measurement. It is suggested that ultra-fine Ti-rich precipitates or Ti segregation at periphery of dislocation loops are formed in V alloys containing Ti at irradiation temperatures below 300 deg. C

Charging kinetics in virgin and 1 MeV-electron irradiated yttria-stabilized zirconia in the 300-1000 K range

International Nuclear Information System (INIS)

Thome, T.; Braga, D.; Blaise, G.; Cousty, J.; Pham Van, L.; Costantini, J.M.

2006-01-01

A study performed with a dedicated scanning electron microscope (SEM) on the surface electrical properties of (1 0 0)-oriented yttria-stabilized zirconia (YSZ) single crystals irradiated with 1 MeV electrons is presented. When compared with virgin YSZ, the 1 MeV-irradiated YSZ shows a decrease of the intrinsic total electron emission coefficient σ 0 and an increase of the time constant τ associated with the charging kinetics of the material at room temperature. These measurements performed with the SEM beam at 10 keV indicate that the defects induced by the 1 MeV-electron irradiation generate a positive electric field of the order of 0.5 x 10 6 V/m at a depth of about 1 μm that prevents electrons to escape. When the SEM beam with a 1.1 keV energy is used, a smaller field (∼0.5 x 10 3 V/m) is detected closer to the surface (∼20 nm). The fading of these fields during the thermal annealing in the 400-1000 K temperature range provides information on the nature of defects induced by the 1 MeV-electron irradiation

Thermal defect annealing of swift heavy ion irradiated ThO2

Science.gov (United States)

Palomares, Raul I.; Tracy, Cameron L.; Neuefeind, Joerg; Ewing, Rodney C.; Trautmann, Christina; Lang, Maik

2017-08-01

Isochronal annealing, neutron total scattering, and Raman spectroscopy were used to characterize the structural recovery of polycrystalline ThO2 irradiated with 2-GeV Au ions to a fluence of 1 × 1013 ions/cm2. Neutron diffraction patterns show that the Bragg signal-to-noise ratio increases and the unit cell parameter decreases as a function of isochronal annealing temperature, with the latter reaching its pre-irradiation value by 750 °C. Diffuse neutron scattering and Raman spectroscopy measurements indicate that an isochronal annealing event occurs between 275-425 °C. This feature is attributed to the annihilation of oxygen point defects and small oxygen defect clusters.

Effect of 520 MeV Kr{sup 20+} ion irradiation on the critical current density of Bi-2212 single crystals

Energy Technology Data Exchange (ETDEWEB)

Terai, Takayuki; Ito, Yasuyuki [Tokyo Univ. (Japan). Faculty of Engineering; Kishio, Kouji

1996-10-01

Change in magnetic properties of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+y} (Bi-2212) single crystals due to Kr{sup 20+} ion irradiation is reported, focused on critical current density and irreversibility magnetic field. The Bi-2212 single crystal specimens (3x3x0.3 mm{sup 3}) were prepared by the floating zone method. Each specimen was irradiated with 520 MeV Kr{sup 20+} ions of 10{sup 10}-10{sup 11} cm{sup -2} in the fluence. Magnetic hysteresis was measured at 4.2K-60K with a vibrating sample magnetometer before and after irradiation. Very large enhancement was observed in critical current density and irreversibility magnetic field above 20K. (author)

Irradiation of UO2

International Nuclear Information System (INIS)

Stevanovic, M.

1965-10-01

Based on the review of the available literature concerned with UO 2 irradiation, this paper describes and explains the phenomena initiated by irradiation of the UO 2 fuel in a reactor dependent on the burnup level and temperature. A comprehensive review of UO 2 radiation damage studies is given as a broad research program. This part includes the abilities of our reactor as well as needed elements for such study. The third part includes the definitions of the specific power, burnup level and temperature in the center of the fuel element needed for planning and performing the irradiation. Methods for calculating these parameters are included [sr

Investigation of a 0.52 eV absorption band of n-type Ge1-xSix solid solutions irradiated with fast electrons at 77 K

International Nuclear Information System (INIS)

Abbasov, Sh.M.; Allakhverdiev, K.R.; Agaverdieva, G.T.; Bakhyshov, N.A.; Nagiev, A.I.

1987-01-01

Solid solutions belonging to the Ge 1-x Si x system are among the promising semiconductor materials. There is no published information on the absorption band in the region of 0.52 eV in Ge 1-x Si x solid solutions irradiated with fast electrons. The authors determined the infrared absorption spectra, impurity photoconductivity, and Hall effect of n-type Ge 1-x Si x solid solutions doped with antimony. These solid solutions were irradiated at 77 K with 5 MeV electrons in doses up to 2 x 10 17 cm -2 . This irradiation was carried out by a method described in Ref. 3

Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

Energy Technology Data Exchange (ETDEWEB)

Jaiswal, Manoj Kumar [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Kumar, Rajesh, E-mail: rajeshkumaripu@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India)

2013-11-01

Thin films of tin(IV) oxide (SnO{sub 2}) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au{sup 8+} using 1 pnA current at normal incidence with ion fluences varying from 1 × 10{sup 11} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV–Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm{sup −1} in FTIR spectrum confirmed the O–Sn–O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO{sub 2} were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

Effect of irradiation with <200 keV electrons on AG-80 resin

Energy Technology Data Exchange (ETDEWEB)

Gao Yu [School of Materials Science and Engineering, Harbin Institute of Technology, 432 Heilongjiang province, Harbin 150001 (China)]. E-mail: czq04@yahoo.com.cn; Jiang Shengling [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Sun Mingren [School of Materials Science and Engineering, Harbin Institute of Technology, 432 Heilongjiang province, Harbin 150001 (China); Yang Dezhuang [School of Materials Science and Engineering, Harbin Institute of Technology, 432 Heilongjiang province, Harbin 150001 (China); He Shiyu[School of Materials Science and Engineering, Harbin Institute of Technology, 432 Heilongjiang province, Harbin 150001 (China); Li Zhijun [39th Institute, China Electronic Science and Technology Groups Inc., Xi-an 710065 (China)

2005-08-01

AG-80 resin, namely tetraglycidyl diaminodiphenyl methane (TGDDM), is a new type of thermosetting matrix for advanced carbon/epoxy composites, which was irradiated with electrons of 160 keV. The results show that by increasing the fluence to 6.3x10{sup 15} cm{sup -2}, the mass loss ratio ascends dramatically and then tends to level off. The mass loss behavior can be attributed to the combined effects of the formation of gaseous radiolytic products and a degraded layer, the surface ablation due to discharging and the skin carbon enrichment.

50 MeV, Li"3"+ - ion irradiation effect on magnetic ordering of Y"3"+ - substituted yttrium iron garnet

International Nuclear Information System (INIS)

Sharma, P. U.; Zankat, K. B.; Dolia, S. N.; Modi, K. B.

2016-01-01

This communication presents the effect of non-magnetic Y"3"+ ions substitution for magnetic Fe"3"+ ions and 50 MeV, Li"3"+ ion irradiation (fluence: 5 × 10"1"3 ions/cm"2) on magnetic ordering and Neel temperature of Y_3_+_xFe_5_-_xO_1_2 (x = 0.0, 0.2, 0.4 and 0.6) garnet system, studied by means of X-ray powder diffractometry and thermal variation of low field (0.5 Oe) ac susceptibility measurements. The un-irradiated compositions exhibit normal ferrimagnetic behavior with decrease in transition temperature (T_N) on increasing Y"3"+-concentration (x). The irradiated counterparts are characterized by tailing effect indicative of non-uniform effect of irradiation and lower value of T_N. The results have been discussed based on the weakening of magnetic exchange interactions and cumulative effect of redistribution of cations and fractional creation of localized paramagnetic centers resulting from swift heavy ion irradiation. The Neel temperatures and exchange integrals have been calculated theoretically.

Microstructural examination of irradiated zircaloy-2 pressure tube material

International Nuclear Information System (INIS)

Srivastava, D.; Tewari, R.; Dey, G.K.; Sah, D.N.; Banerjee, S.

2005-01-01

Irradiation induced microstructural changes in Zr alloys strongly influence the creep, growth and mechanical properties of pressure tube material. Since dimensional changes and mechanical property degradation can limit the life of pressure tube, it is essential to study and develop an understanding of the microstructure produced by neutron irradiation, by examining samples taken from the irradiated components. In the present work, an effort has been made to examine, microstructure of the Zircaloy-2 pressure tube material irradiated in the Indian Pressurized Heavy Water Reactor (PHWR). The present work is a first step towards a comprehensive program of characterization of microstructure of reactor materials after irradiation to different fluence levels in power reactors. In this study, samples from a Zircaloy-2 pressure tube, which had been in operation in the high flux region of Rajasthan Atomic Power Station Unit 1, for a period for 6.77 effective full power years (EFPYs), have been prepared and examined. The samples selected from the tube are expected to have a cumulative radiation damage of about 3 dpa. Samples prepared from the off cuts of RAPS-1 pressure tubes were also studied for examining the unirradiated microstructure of the material. The samples were examined in a 200kV JEOL 2000 FX microscope. This paper presents the distinct features observed in irradiated sample and a comprehensive comparison of the microstructures of the unirradiated and irradiated material. The effect of annealing on the annihilation of the defects generated during irradiation has been also studied. The bright field micrographs revealed that microstructure of the irradiated samples was different in many respects from the microstructure of the unirradiated samples. The presence of defect structure in the form of loops etc could be seen in the irradiated sample. These loops were mostly c-type loops lying in the basal plane. The dissolution and redistribution of the precipitates were

Effect of 100 MeV Ag{sup +7} ion irradiation on the bulk and surface magnetic properties of Co–Fe–Si thin films

Energy Technology Data Exchange (ETDEWEB)

Hysen, T., E-mail: hysenthomas@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Department of Physics, Christian College, Chengannur, Kerala 689 122 (India); Geetha, P. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Al-Harthi, Salim; Al-Omari, I.A. [Department of Physics, College of Science, Sultan Qaboos University, Al Khod 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639 798 (Singapore); Sakthikumar, D. [Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe (Japan); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India)

2014-12-15

Thin films of Co–Fe–Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag{sup +7} ions at fluences of 1×10{sup 11}, 1×10{sup 12} and 1×10{sup 13} ions/cm{sup 2}. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag{sup 7+} ions modifies the surface morphology. Irradiating with ions at fluences of 1×10{sup 11} ions/cm{sup 2} smoothens the mesoscopic hill-like structures, and then, at 1×10{sup 12} ions/cm{sup 2} new surface structures are created. When the fluence is further increased to 1×10{sup 13} ions/cm{sup 2} an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×10{sup 11} ions/cm{sup 2}, 1×10{sup 12} ions/cm{sup 2} and 1×10{sup 13} ions/cm{sup 2} the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation. - Highlights: • We have irradiated thermally evaporated Co–Fe–Si thin films on glass substrate with 100 MeV Ag{sup +7} ions using the 15 UD Pelletron Accelerator at IUAC, New Delhi, India. • Surface morphology and magnetic characteristics of the films can be altered with ion irradiation. • It was observed that the variation in surface magnetic properties correlates well with the changes in surface morphology, further reiterating the

Ionic conduction in 70-MeV C5+-ion-irradiated poly(vinylidenefluoride- co-hexafluoropropylene)-based gel polymer electrolytes

International Nuclear Information System (INIS)

Saikia, D.; Kumar, A.; Singh, F.; Avasthi, D.K.; Mishra, N.C.

2005-01-01

In an attempt to increase the Li + -ion diffusivity, poly(vinylidenefluoride-co-hexafluoropropylene)-(propylene carbonate+diethyl carbonate)-lithium perchlorate gel polymer electrolyte system has been irradiated with 70-MeV C 5+ -ion beam of nine different fluences. Swift heavy-ion irradiation shows enhancement in ionic conductivity at lower fluences and decrease in ionic conductivity at higher fluences with respect to unirradiated gel polymer electrolyte films. Maximum room-temperature (303 K) ionic conductivity is found to be 2x10 -2 S/cm after irradiation with a fluence of 10 11 ions/cm 2 . This interesting result could be attributed to the fact that for a particular ion beam with a given energy, a higher fluence provides critical activation energy for cross linking and crystallization to occur, which results in the decrease in ionic conductivity. X-ray-diffraction results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at higher fluences (>10 11 ions/cm 2 ). Analysis of Fourier-transform infrared spectroscopy results suggests the bond breaking at a fluence of 5x10 9 ions/cm 2 and cross linking at a fluence of 10 12 ions/cm 2 and corroborate conductivity and x-ray-diffraction results. Scanning electron micrographs exhibit increased porosity of the polymer electrolyte after ion irradiation

V79 survival following simultaneous or sequential irradiation by 14.8-MeV neutrons and 60Co photons

International Nuclear Information System (INIS)

Higgins, P.D.; DeLuca, P.M. Jr.; Pearson, D.W.; Gould, M.N.

1981-01-01

A unique tandem source irradiation facility, comprised of an intense d-T neutron source and a 60 Co teletherapy unit, has been used to investigate biological response for different neutron/photon configurations. V79 Chinese hamster cells, attached as monolayers in log phase growth, were irradiated at 37 0 C by either 14.8 MeV neutrons, 60 Co or by a mixture of 40% neutrons - 60% photons in simultaneous or sequential application. Measurements of cell survival indicate an increased effectiveness in cell killing for simultaneously administered neutrons and photons than was measured or predicted for sequentially applied beam modalities. An understanding of the magnitude of these interactive effects is important both for calculating accurate effective doses for neutron radiotherapy of deep-seated tumors, for which the photon component is appreciable and for determination of environmental hazards to people occupationally exposed to low levels of photons and neutrons

Radiation defect distribution in silicon irradiated with 600 keV electrons

International Nuclear Information System (INIS)

Hazdra, P.; Dorschner, H.

2003-01-01

Low-doped n-type float zone silicon was irradiated with 600 keV electrons to fluences from 2x10 13 to 1x10 15 cm -2 . Radiation defects, their introduction rates and full-depth profiles were measured by two complementary methods - the capacitance deep level spectroscopy and the high-voltage current transient spectroscopy. Results show that, in the vicinity of the anode junction, the profile of vacancy-related defect centers is strongly influenced by electric field and an excessive generation of vacancies. In the bulk, the slope of the profile can be derived from the distribution of absorbed dose taking into the account the threshold energy necessary for Frenkel pair formation and the dependency of the defect introduction rate on electron energy

Irradiation test OF-2: high-temperature irradiation behavior of LASL-made fuel rods and LASL-made coated particles

International Nuclear Information System (INIS)

Wagner, P.; Reiswig, R.D.; Hollabaugh, C.M.; White, R.W.; O'Rourke, J.A.; Davidson, K.V.; Schell, D.H.

1977-10-01

Three LASL-made, substoichiometric ZrC-coated particles with inert kernels, and two high-density molded graphite fuel rods that contained LASL-made, ZrC-coated fissile particles were irradiated in the Oak Ridge Research Reactor test OF-2. The severest test conditions were 8.36 x 10 21 nvt (E greater than 0.18 MeV) at 1350 0 C. The graphite matrix showed no effect of the irradiation. There was no interaction between the matrix and any of the particle coats. The loose ZrC coated particles with inert kernels showed no irradiation effects. The graded ZrC-C coats on the fissile particles were cracked. It is postulated that the cracking is associated with the low LTI deposition rate and is not related to the ZrC

Effect of 200 keV proton irradiation on the properties of methyl silicone rubber

International Nuclear Information System (INIS)

Zhang Lixin; Xu Zhou; Wei Qiang; He Shiyu

2006-01-01

The effects of 200 keV proton irradiation on methyl silicone rubber were studied. The changes in surface morphology, mechanical properties, cross-linking density, glass transition temperature, infrared attenuated total reflection spectrum and mass spectrum indicated that, at lower fluence, the proton irradiation induced cross-linking, resulting in an increase in tensile strength and hardness of the methyl silicone rubber. However, at higher proton fluence, radiation-induced degradation, which decreased the tensile strength and hardness, became dominant. A macromolecular-network destruction model for silicone rubber irradiated with protons was proposed

Latency in vitro using irradiated Herpes simplex virus

International Nuclear Information System (INIS)

Nishiyama, Y.; Rapp, F.

1981-01-01

Human embryonic fibroblasts infected with u.v.-irradiated herpes simplex virus type 2 (HSV-2, strain 186) and maintained at 40.5 0 C did not yield detectable virus. Virus synthesis was induced by temperature shift-down to 36.5 0 C. The induced virus grew very poorly and was inactivated very rapidly at 40.5 0 C. Non-irradiated virus failed to establish latency at 40.5 0 C in infected cells. Enhanced reactivation of HSV-2 was observed when latently infected cultures were superinfected with human cytomegalovirus (HCMV) or irradiated with a small dose of u.v. light at the time of temperature shift-down. HCMV did not enhance synthesis of HSV-2 during a normal growth cycle but did enhance synthesis of u.v.-irradiated HSV-2. These observations suggest that in this in vitro latency system, some HSV genomes damaged by u.v. irradiation were maintained in a non-replicating state without being destroyed or significantly repaired. (author)

Measurement of energy deposition distributions produced in cylindrical geometry by irradiation with 15 MeV neutrons

International Nuclear Information System (INIS)

Brandan, M.E.

1979-01-01

Cellular survival experiments have shown that the biological damage induced by radiation depends on the density of energy deposition along the trajectory of the ionizing particle. The quantity L is defined to measure the density of energy transfer along a charged particle's trajectory. It is equal to sigma/l, where sigma is the energy transferred to a medium and l is the path length along which the transfer takes place. L is the stochastic quantity whose mean value is the unrestricted linear energy transfer, L/sub infinity/. Measurements of the distribution of L in a thin medium by secondary charged particles from fast neutron irradiation were undertaken. A counter operating under time coincidence between two coaxial cylindrical detectors was designed and built for this purpose. Secondary charged particles enter a gas proportional counter and deposit some energy sigma. Those particles traversing the chamber along a radial trajectory strike a CsI scintillator. A coincidence between both detectors' signals selects a known path length for these events, namely the radius of the cavity. Measurements of L distributions for l = 1 μm in tissue were obtained for 3 and 15 MeV neutron irradiation of a tissue-equivalent target wall and for 15 MeV neutron irradiation of a graphite wall. Photon events were corrected for by measurements with a Pb target wall and 15 MeV neutron irradiation as well as exposure to a pure photon field. The measured TE wall distributions with 15 MeV neutron bombardment show contributions from protons, α-particles, 9 Be and 12 C recoils. The last three comprise the L distribution for irradiation of the graphite wall. The proton component of the measured L distributions at 3 and 15 MeV was compared to calculated LET distributions

Treatment of toxic gases SO2 and NO X by electron beam irradiation

International Nuclear Information System (INIS)

Castro Rubio Poli, D. de; Vieira, J.M.; Campos, C.A. de.

1993-01-01

The removal of S O 2 and N O x by electron beam irradiation will be studied using a small scale flow system which is being set up in order to obtain basic data for the process technical and economical feasibility concerning industrial applications. The gas irradiation will be performed using a Electron Beam Accelerator with 1,5 MeV power, 25 m A current from Radiation Dynamics, Inc. USA. (author)

Effect of heat treatment and irradiation temperature on mechanical properties and structure of reduced-activation Cr-W-V steels of bainitic, martensitic, and martensitic-ferritic classes

International Nuclear Information System (INIS)

Gorynin, I.V.; Rybin, V.V.; Kursevich, I.P.; Lapin, A.N.; Nesterova, E.V.; Klepikov, E.Yu.

2000-01-01

Effects of molybdenum replacement by tungsten in steels of the bainitic, martensitic, and martensitic-ferritic classes containing 2.5%, 8% and 11% Cr, respectively, were investigated. The phase composition and structure of the bainitic steels were varied by changing the cooling rates from the austenitization temperature (from values typical for normalization up to V=3.3 x 10 -2 deg. C/s) and then tempering. The steels were irradiated to a fluence of 4x10 23 n/m 2 (≥0.5 MeV) at 270 deg. C and to fluences of 1.3x10 23 and 1.2x10 24 n/m 2 (≥0.5 MeV) at 70 deg. C. The 2.5Cr-1.4WV and 8Cr-1.5WV steels have shown lower values of the shifts in ductile-brittle transition temperature (DBTT) under irradiation in comparison with corresponding Cr-Mo steels. Radiation embrittlement at elevated irradiation temperature was lowest in bainitic 2.5Cr-1.4WV steel and martensitic-ferritic 11Cr-1.5WV steel. The positive effect of molybdenum replacement by tungsten at irradiation temperature ∼300 deg. C is reversed at T irr =70 deg. C

Time-differential observation of the ortho-para conversion of liquid D2 under irradiation

International Nuclear Information System (INIS)

Mishima, K.; Utsuro, M.; Nagai, Y.; Tanaka, M.; Kohmoto, T.; Fukuda, Y.; Kiyanagi, Y.; Ooi, M.

2007-01-01

We measured an absolute ortho-D 2 concentration of gas samples taken from irradiated liquid D 2 samples as a function of the integrated radiation dose and the irradiation time by means of a frequency-resolved Raman spectroscopy to study the ortho-D 2 conversion mechanism under irradiation. The measurement was carried out by irradiating liquid ortho-D 2 at a temperature of 25 K with Bremsstrahlung photons, which were produced by bombarding tantalum with 33 MeV electrons, and whose absolute fluxes were determined experimentally by employing a foil activation method. The obtained ortho-D 2 concentration was found to decrease from 98% to 82% monotonically with increasing the radiation dose, irrespective of the electron-beam power. This fact clearly indicates the important role of a radiation-induced breakup effect of the ortho D 2 under the present experimental conditions of radiation dose and irradiation time. The obtained conversion rate is ten times faster than the evaluated value based on an existing model, requiring an alternate mechanism to enhance the conversion

Three-Dimensional Volumetric Analysis of Irradiated Lung With Adjuvant Breast Irradiation

International Nuclear Information System (INIS)

Teh, Amy Yuen Meei; Park, Eileen J.H.; Shen Liang; Chung, Hans T.

2009-01-01

Purpose: To retrospectively evaluate the dose-volume histogram data of irradiated lung in adjuvant breast radiotherapy (ABR) using a three-dimensional computed tomography (3D-CT)-guided planning technique; and to investigate the relationship between lung dose-volume data and traditionally used two-dimensional (2D) parameters, as well as their correlation with the incidence of steroid-requiring radiation pneumonitis (SRRP). Methods and Materials: Patients beginning ABR between January 2005 and February 2006 were retrospectively reviewed. Patients included were women aged ≥18 years with ductal carcinoma in situ or Stage I-III invasive carcinoma, who received radiotherapy using a 3D-CT technique to the breast or chest wall (two-field radiotherapy [2FRT]) with or without supraclavicular irradiation (three-field radiotherapy [3FRT]), to 50 Gy in 25 fractions. A 10-Gy tumor-bed boost was allowed. Lung dose-volume histogram parameters (V 10 , V 20 , V 30 , V 40 ), 2D parameters (central lung depth [CLD], maximum lung depth [MLD], and lung length [LL]), and incidence of SRRP were reported. Results: A total of 89 patients met the inclusion criteria: 51 had 2FRT, and 38 had 3FRT. With 2FRT, mean ipsilateral V 10 , V 20 , V 30 , V 40 and CLD, MLD, LL were 20%, 14%, 11%, and 8% and 2.0 cm, 2.1 cm, and 14.6 cm, respectively, with strong correlation between CLD and ipsilateral V 10-V40 (R 2 = 0.73-0.83, p 10 , V 20 , V 30 , and V 40 were 30%, 22%, 17%, and 11%, but its correlation with 2D parameters was poor. With a median follow-up of 14.5 months, 1 case of SRRP was identified. Conclusions: With only 1 case of SRRP observed, our study is limited in its ability to provide definitive guidance, but it does provide a starting point for acceptable lung irradiation during ABR. Further prospective studies are warranted.

Effects of 2'-chlorothymidine on Chinese hamster cells irradiated with x-rays and ultraviolet light

Energy Technology Data Exchange (ETDEWEB)

Murai, T; Kuwabara, M; Sato, F; Kubo, K; Itoh, T; Yoshii, G

1985-06-01

Effects of 2'-chlorothymidine (2'-Cl-TdR) and its mother compound, thymidine (TdR), on cell killing induced by X- and UV-irradiation have been investigated. Chinse hamster V-79 (TK/sup +/) cells as well as thymidine kinase deficient (TK/sup -/) variant cells, which were isolated from parental V-79 cells following stepwise treatment with BUdR, were incubated in a medium containing 2'-Cl-TdR and TdR after X- and UV-irradiation. In the TK/sup +/ cells, both 2'-Cl-TdR and TdR enhanced the killing efficiency of X-rays and ultraviolet light. On the other hand, in the TK/sup -/ cells, only 2'-Cl-TdR enhanced the killing efficiency of X- and UV-irradiation, and no effect of TdR was observed. These results suggest that phosphorylation of TdR by the enzyme is essential for its ability to modify radiation response, while the enhancement of cell killing by 2'-Cl-TdR must be explained by a mechanism at least partly independent of phosphorylation. (author).

Activation of 45-MeV proton irradiation and proton-induced neutron irradiation in polymers

International Nuclear Information System (INIS)

Ra, Se-Jin; Kim, Kye-Ryung; Jung, Myung-Hwan; Yang, Tae-Keon

2010-01-01

During beam irradiation experiments with more than a few MeV energetic protons, the sample activation problem can be very severe because it causes many kinds of additional problems for the post-processing of the samples, such as time loss, inconvenience of sample handling, personal radiation safety, etc. The most serious problem is that immediate treatment of the sample is impossible in some experiments, such as nano-particle synthesizing. To solve these problems, we studied why the samples are activated and how the level of the activation can be reduced. It is known that the main reasons of activation are nuclear reactions with elements of the target material by primary protons and secondary produced neutrons. Even though the irradiation conditions are same, the level of the activation can be different depending on the target materials. For the nanoparticle synthesizing experiments, the target materials can be defined as the container and the sample itself. The reduction of the activation from the container is easier than the reduction from the sample. Therefore, we tried to reduce the activation level by changing the container materials. In this paper, the results are displayed for some candidate container materials, such as polymethyl methacrylate, polystyrene, Glass, etc., with 45-MeV and 10-nA proton beams. As a result, PS is the most suitable material for the container because of its relatively low level of the activation by protons. Also the contribution of secondary produced neutrons to the activation is negligible.

Anisotropic dislocation loop nucleation in ion-irradiated MgAl2O4

International Nuclear Information System (INIS)

Zinkle, S.J.

1991-01-01

Polycrystalline disks of stoichiometric magnesium aluminate spinel (MgAl 2 O 4 ) were irradiated with 2 MeV Al + ions at 650 degrees C and subsequently analyzed in cross-section using transmission electron microscopy (TEM). Interstitial dislocation loops were observed on 110 and 11 habit planes. The population of loops on both sets of habit planes was strongly dependent on their orientation with respect to the ion beam direction. The density of loops with habit plane normals nearly perpendicular to the ion beam direction much higher than loops with habit plane normals nearly parallel to the ion beam direction. On the other hand, the loop size was nearly independent of habit plane orientation. This anisotropic loop nucleation does not occur in ion-irradiated metals such as copper. An additional anomaly associated with ion-irradiated spinel is that the loops on 111 planes were partially unfaulted with a Burgers vector of b = a/4 . Previous neutron irradiation studies have never reported unfaulted loops in stoichiometric spinel. Possible cause of the unusual response of spinel to ion irradiation are discussed. 12 refs., 14 figs

Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films

Energy Technology Data Exchange (ETDEWEB)

Sulania, Indra; Kanjilal, D. [Inter University Accelerator Centre, P O Box-10502, Aruna Asaf Ali Marg, New Delhi-110067 (India); Kaswan, Jyoti; Attatappa, Vinesh [Department of physics, Amity University, Manesar-122 413, Haryana (India); Karn, Ranjeet Kumar [Jamshedpur Cooperative College, Circuit House Area, Jamshedpur-831001, Jharkhand (India); Agarwal, D. C. [Sant Longowal Institute of Engineering and Technology, Sangrur, Longowal-148106, Punjab (India)

2016-05-23

Thin films of α-Fe{sub 2}O{sub 3} of thickness ~100 nm were synthesized on Si (100) and glass substrates by thermal evaporation method. The as deposited films were annealed at 400°C in Oxygen environment for 2 hours to obtain the desired phase. The annealed films found to be polycrystalline in nature with an average crystallite size ~7 nm. The direct and indirect band gaps were found to be 2.2 and 1.5 eV respectively for annealed films using. I-V characteristics and Hall-effect measurement of annealed films showed n-type semi conducting behavior. Further, films were irradiated with nitrogen ions of energy 10 keV at an ion fluence of 1×10{sup 18} ions/cm{sup 2}. After irradiation, a decrease in both direct as well as indirect band gap was observed, from 2.2 to 2.1 eV and 1.5 to 1.3 eV respectively. I-V characteristic and Hall-Effect measurement confirmed change in conductivity of the films from n-type to p-type after irradiation, which can have possible applications in semi conducting device fabrications.

Microscopic evaluation of nuclear foci (gamma H2AX) in cells irradiated with protons and lithium ions

International Nuclear Information System (INIS)

Bracalente, C.; Molinari, Beatriz L.; Duran, Hebe; Ibanez, I.; Palmieri, M.; Kreiner, Andres J.; Burlon, Alejandro; Valda, Alejandro; Davidson, J.; Davidson, M.; Vazquez, Monica; Ozafran, Mabel J.

2007-01-01

Full text: The special properties of both physical and biological radiation particles with high-LET (Linear Transfer of Energy) have led to its increased use in cancer therapy. In this work, the effect of high and low LET radiation on cell lines with different radiosensitivity (Irs-20 and CHO-10B2) quantifying the number and size of nuclear foci obtained from histone H2AX (γH2AX) phosphorylation which plays an important role in DNA damage reparation is compared. Foci detection was performed by immunocytochemical methods and fluorescence microscopy. The cells cultures were irradiated with plateau-phase protons (14 MeV, LET: 3 keV/μ), on Bragg peak (3 MeV. LET: 14 KeV/μ) and with Lithium ions (7 MeV, LET: 250 KeV//μ) on the Tandar accelerator. A clonogenic analysis of the two cell lines was made. Irradiation with protons (low LET) showed a significant difference (p [es

Irradiation defect structures in YBa2Cu3O7-x and their correlation with superconducting properties

International Nuclear Information System (INIS)

Kirk, M.A.

1990-11-01

We review our work on irradiation effects in single crystal YBa 2 CU 3 O 7-x . Transmission electron microscopy has been employed to study the defect microstructures produced by irradiations with fast neutrons, MeV ions (Kr, Ne and p), and electrons. The atomic structure within defect cascades was investigated using 50 keV Kr and Xe ion irradiations to low doses. Evidence is shown for an amorphous structure with some incoherent recrystallization within individual cascades. Correlation with enhancements in critical current density produced by neutron irradiations suggest that this cascade structure effectively pins magnetic flux lines. At sufficiently high fluences of fast neutrons or MeV Kr and Ne ions, a cellular microstructure is found. This structure consists of cells or microcrystallites of good cystalline and superconducting material (in the case of neutron irradiation), with cell walls of amorphous material. Full amorphization proceeds with the growth of cell wall volume. The formation of this microstructure coincides with a decrease in critical transport current, but is not observed by magnetization measurements. Increases in critical current density under proton irradiation, comparable to those produced by neutron irradiation, have been reported. The defect structure produced by proton irradiations is examined here and found to differ from that of neutron irradiations. Our most recent measurements of changes in critical temperature and current density, and defect microstructure following electron irradiations will be described. 20 refs., 6 figs

Positronium formation in helium bubbles in 600 MeV proton-irradiated aluminium

DEFF Research Database (Denmark)

Jensen, K. O.; Eldrup, Morten Mostgaard; Singh, Bachu Narain

1985-01-01

Aluminium samples containing helium bubbles produced by 600 MeV proton irradiation at 430°C were investigated by positron annihilation; both lifetime and angular correlation measurements were made. The angular correlation curves contain an unusually narrow component. This component is associated...

Parameters of compensating centers in n-type Si highly compensated by irradiation. Parametry kompensiruyushchikh tsentrov v n-Si sil'no kompensirovannym oblucheniem

Energy Technology Data Exchange (ETDEWEB)

Klinger, P M; Fistul' , V I [Moskovskij Gosudarstvennyj Univ., Moscow (USSR)

1990-06-01

Resuls of investigations into effect of {gamma}- and neutron irradiation on defect formation in high-ohmic n-Si

using technique of capacity temperature dependence (CTD) are given. Radiation dose varied from 4.8x10{sup 17} up to 1.7x10{sup 18} cm{sup -2}. CTD technique is shown to be successfully applied to investigate into defect formation at irradiation of highly compensated silicon. Rate of admission of Ec-0.40 eV deep acceptor levels in n-Si at pulsed electron irradiation does not depend on fine impurity cocentration. Positions of energy levels of deep acceptors introduced into n-Si do not coincide and constitute, respectively, E{sub c}-0.40 and E{sub c}-049 eV.

Effect of irradiation temperature and strain rate on the mechanical properties of V-4Cr-4Ti irradiated to low doses in fission reactors

International Nuclear Information System (INIS)

Zinkle, S.J.; Snead, L.L.; Rowcliffe, A.F.; Alexander, D.J.; Gibson, L.T.

1998-01-01

Tensile tests performed on irradiated V-(3-6%)Cr-(3-6%)Ti alloys indicate that pronounced hardening and loss of strain hardening capacity occurs for doses of 0.1--20 dpa at irradiation temperatures below ∼330 C. The amount of radiation hardening decreases rapidly for irradiation temperatures above 400 C, with a concomitant increase in strain hardening capacity. Low-dose (0.1--0.5 dpa) irradiation shifts the dynamic strain aging regime to higher temperatures and lower strain rates compared to unirradiated specimens. Very low fracture toughness values were observed in miniature disk compact specimens irradiated at 200--320 C to ∼1.5--15 dpa and tested at 200 C

Structural effects in UO{sub 2} thin films irradiated with U ions

Energy Technology Data Exchange (ETDEWEB)

Popel, A.J., E-mail: apopel@cantab.net [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom); Adamska, A.M.; Martin, P.G.; Payton, O.D. [Interface Analysis Centre, School of Physics, University of Bristol, Bristol BS8 1TL (United Kingdom); Lampronti, G.I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom); Picco, L.; Payne, L.; Springell, R.; Scott, T.B. [Interface Analysis Centre, School of Physics, University of Bristol, Bristol BS8 1TL (United Kingdom); Monnet, I.; Grygiel, C. [CIMAP, CEA-CNRS-ENSICAEN-Université de Caen, BP 5133, 14070 Caen Cedex5 (France); Farnan, I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom)

2016-11-01

Highlights: • Quantitative characterisation of radiation damage by kernel average misorientation. • UO{sub 2} (1 1 1) plane showed higher irradiation tolerance than (1 1 0) plane. • UO{sub 2} film-YSZ substrate interface is stable under low fluence irradiation. • (0 0 1), (1 1 0), (1 1 1) single crystal UO{sub 2} thin films on YSZ substrates are expected. - Abstract: This work presents the results of a detailed structural characterisation of irradiated and unirradiated single crystal thin films of UO{sub 2}. Thin films of UO{sub 2} were produced by reactive magnetron sputtering onto (0 0 1), (1 1 0) and (1 1 1) single crystal yttria-stabilised zirconia (YSZ) substrates. Half of the samples were irradiated with 110 MeV {sup 238}U{sup 31+} ions to fluences of 5 × 10{sup 10}, 5 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} to induce radiation damage, with the remainder kept for reference measurements. It was observed that as-produced UO{sub 2} films adopted the crystallographic orientation of their YSZ substrates. The irradiation fluences used in this study however, were not sufficient to cause any permanent change in the crystalline nature of UO{sub 2}. It has been demonstrated that the effect of epitaxial re-crystallisation of the induced radiation damage can be quantified in terms of kernel average misorientation (KAM) and different crystallographic orientations of UO{sub 2} respond differently to ion irradiation.

Effects of high energy (MeV) ion beam irradiation on polyethylene terephthalate

International Nuclear Information System (INIS)

Singh, Nandlal; Sharma, Anita; Avasthi, D.K.

2003-01-01

Irradiation effects of 50 MeV Li 3+ ion beams in polyethylene terephthalate (PET) films were studied with respect to their structural and electrical properties by using Fourier transform infrared (FTIR) spectroscopy and ac electrical measurement in the frequency range: 50-100 kHz at different temperatures of 30-150 deg. C. It is found that ac resistivity of PET decreases as frequency increases. The temperature dependencies of dielectric loss tangent exhibit a peak (T g ) at 60 deg. C. The capacitance value of irradiated PET is almost temperature independent and ones increases with an increasing of lithium fluence. FTIR spectra show various bands related to C-H, C-O, C-O-C molecular bonds and groups which get modified or break down due to ion beam irradiation

Relative Biologic Effectiveness (RBE) of 50 kV X-rays Measured in a Phantom for Intraoperative Tumor-Bed Irradiation

Energy Technology Data Exchange (ETDEWEB)

Liu, Qi; Schneider, Frank; Ma, Lin; Wenz, Frederik [Department of Radiation Oncology, Universitätsmedizin Mannheim, Medical Faculty Mannheim, University of Heidelberg, Mannheim (Germany); Herskind, Carsten, E-mail: carsten.herskind@medma.uni-heidelberg.de [Department of Radiation Oncology, Universitätsmedizin Mannheim, Medical Faculty Mannheim, University of Heidelberg, Mannheim (Germany)

2013-03-15

Purpose: Intraoperative radiation therapy (IORT) with low-energy x-rays is used to treat the tumor bed during breast-conserving surgery. The purpose was to determine the relative biologic effectiveness (RBE) of 50-kV x-rays for inactivation of cells irradiated in a tumor-bed phantom. Methods and Materials: The RBE was determined for clonogenic inactivation of human tumor and normal cells (MCF7, human umbilical vein endothelial cells, normal skin fibroblasts), and hamster V79 cells. The 50-kV x-rays from the Intrabeam machine (Carl Zeiss Surgical) with a spherical 4-cm applicator were used. Cells were irradiated in a water-equivalent phantom at defined distances (8.1-22.9 mm) from the applicator surface. The 50-kV x-rays from a surface therapy machine (Dermopan, Siemens) were included for comparison; 6-MV x-rays were used as reference radiation. Results: At 8.1-mm depth in the phantom (dose rate 15.1 Gy/h), mean RBE values of 50-kV x-rays from Intrabeam were 1.26 to 1.42 for the 4 cell types at doses yielding surviving fractions in the range of 0.01 to 0.5. Confidence intervals were in the range of 1.2 and 1.5. Similar RBE values were found for 50-kV x-rays from Dermopan for V79 (1.30, CI 1.25-1.36, P=.74) and GS4 (1.42, CI 1.30-1.54, P=.67). No significant dependence of RBE on dose was found for Intrabeam, but RBE decreased at a larger distance (12.7 mm; 9.8 Gy/h). Conclusions: An increased clinically relevant RBE was found for cell irradiation with Intrabeam at depths in the tumor bed targeted by IORT. The reduced RBE values at larger distances may be related to increased repair of sublethal damage during protracted irradiation or to hardening of the photon beam energy.

Nuclear and activation characteristics of materials in 14.1-MeV and 2.5-MeV neutron field

International Nuclear Information System (INIS)

Seki, Yasushi; Takeyasu, Yuuichi.

1988-11-01

The nuclear and activation characteristics of various materials and elements of interest in terms of fusion reactor design are calculated and the results are graphically shown. The elements and materials are placed in a simple geometry modelling a blanket and shield of a fusion reactor. The neutrons with 14.1-MeV and 2.5-MeV energy are generated from the region represented as D-T and D-D plasma, respectively. The following activation characteristics after neutron irradiation are shown for each material and element; 1. Time evolution of induced activity, 2. Time evolution of decay heat, 3. Delayed gamma-ray dose distribution, 4. Decay heat distribution. In addition to the above activation characteristics, nuclear characteristics during the neutron irradiation, e.g. neutron energy spectra, neutron and gamma-ray flux distribution, nuclear heating distributions, and neutron and gamma-ray dose rate are also shown. (author)

Defects in TiO2 crystals produced by neutron irradiations at 20 K

International Nuclear Information System (INIS)

Okada, M.; Nakagawa, M.; Atobe, K.; Kawabata, Y.

1994-01-01

The single crystals rutile (TiO 2 ), cut parallel and perpendicular to the c-axis, are irradiated by reactor neutrons at 20 K (8.0x10 16 n/cm 2 ; E>0.1 MeV). By means of optical measurements an intense absorption band, which has a maximum peak near 1 μm (having FWHM similar 0.87 eV), is observed and is annealed out at about 220 K. Also, some kinds of defect centers can be distinguished by ESR measurements. The broad band has similar characteristics to that in reduced TiO 2 crystal, in which the band has a maximum peak at 1.5 μm. With heavy reduction, the intensity of the broad band enhances with increasing electrical conductivity. It has been proposed that the origin of the band in reduced crystals may be attributable to the absorption of donors due to the polaron effects. The evidence for the assignment to the defect in the irradiated crystals is obtained by optical, ESR, and electrical resistivity measurements. The results lead to quite a different origin for the irradiation produced defect centers. ((orig.))

Preliminary studies on 1-vinyl-2-pyrrolidone grafting onto cellulose by pre-irradiation method

Energy Technology Data Exchange (ETDEWEB)

Severich, Patrick; Dutra, Rodrigo da Costa; Kodama, Yasko, E-mail: ykodama@ipen.br, E-mail: patrick.severich@ipen.br, E-mail: rodrigo.dutra@ipen.br [Instituto de Pesquisas Energética s e Nucleares (IPEN-CNEN/SP), São Paulo, SP (Brazil)

2017-07-01

Cellulose is considered a renewable biopolymer most abundant in nature. Better functional surfaces can be Obtained by modifying cellulose. On the other hand, poly vinyl pyrrolidone, PVP, is a synthetic nontoxic, water-soluble polymer frequently used in an extensive variety of applications including several pharmaceutical applications. Grafting 1-vinyl-2-pyrrolidone, NVP, onto polymeric cellulose can be obtained by ionizing radiation. Ionizing radiation grafting can be affected by several factors as environment, solvent, monomer concentration, temperature of graft reaction. Grafting by ionizing radiation can be performed by three methods, pre-irradiation, oxidation by peroxide and simultaneous irradiation. In this study, it was used pre-irradiation method of cellulose. Paper filter without ash, NVP without purification was used in this study. Paper samples were exposed to electron beam from Dynamitron Accelerator with radiation absorbed dose of 25 kGy. Influence of NVP concentration, temperature of reaction after irradiation on degree of grafting (DG) was studied. Also, cellulose radicals of grafted paper samples was studied by electron paramagnetic resonance using a Bruker X-band ESR at room temperature just after heating reaction. Small decrease of cellulose radicals was observed with increasing reaction temperature. It was observed DG small increase with increasing concentration of monomer in solution of water ethanol 50-50 v:v and rising temperature of reaction. Further tests using simultaneous method of grafting of NVP in cellulose paper, in water:ethanol 75:25 v:v solution, induced by gamma irradiation were performed. It was observed homopolymerization forming PVP with increasing monomer concentration. (author)

Preliminary studies on 1-vinyl-2-pyrrolidone grafting onto cellulose by pre-irradiation method

International Nuclear Information System (INIS)

Severich, Patrick; Dutra, Rodrigo da Costa; Kodama, Yasko

2017-01-01

Cellulose is considered a renewable biopolymer most abundant in nature. Better functional surfaces can be Obtained by modifying cellulose. On the other hand, poly vinyl pyrrolidone, PVP, is a synthetic nontoxic, water-soluble polymer frequently used in an extensive variety of applications including several pharmaceutical applications. Grafting 1-vinyl-2-pyrrolidone, NVP, onto polymeric cellulose can be obtained by ionizing radiation. Ionizing radiation grafting can be affected by several factors as environment, solvent, monomer concentration, temperature of graft reaction. Grafting by ionizing radiation can be performed by three methods, pre-irradiation, oxidation by peroxide and simultaneous irradiation. In this study, it was used pre-irradiation method of cellulose. Paper filter without ash, NVP without purification was used in this study. Paper samples were exposed to electron beam from Dynamitron Accelerator with radiation absorbed dose of 25 kGy. Influence of NVP concentration, temperature of reaction after irradiation on degree of grafting (DG) was studied. Also, cellulose radicals of grafted paper samples was studied by electron paramagnetic resonance using a Bruker X-band ESR at room temperature just after heating reaction. Small decrease of cellulose radicals was observed with increasing reaction temperature. It was observed DG small increase with increasing concentration of monomer in solution of water ethanol 50-50 v:v and rising temperature of reaction. Further tests using simultaneous method of grafting of NVP in cellulose paper, in water:ethanol 75:25 v:v solution, induced by gamma irradiation were performed. It was observed homopolymerization forming PVP with increasing monomer concentration. (author)

Depth distribution of carrier lifetime in 65 MeV oxygen ion irradiated silicon wafers

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.S. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya (Japan); Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411 007 (India); Kanjilal, D. [Nuclear Science Centre, New Delhi (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: sanjay@physics.unipune.ernet.in

2006-03-15

CZ-grown, n-doped crystalline Si(1 1 1) of resistivity 60 {omega} cm and 140 {omega} cm were irradiated with 65 MeV energy oxygen ions, in the fluence range of 2 x 10{sup 1}-10{sup 14} ions/cm{sup 2}. The depth and spatial profile of excess minority carrier recombination time {tau} (lifetime) was measured using photoconductive decay (PCD) method. Lifetime measurements were carried out before the stopping range of impinging ions. Results show a monotonous decrease in lifetime with fluence, which is attributed to defect creation mechanism by electronic energy loss based on the thermal spike model. Also, surface modification is expected with a small loss in crystalline quality. This surface is considered to be a multi-crystalline surface with large grain boundaries that act as trapping sites for excess holes in n-Si(1 1 1). Annealing of the irradiated samples showed a near complete recovery at 750 deg. C for a period of 1 h.

Microstructural examination of V-(4-5%) Cr-(4-5%)Ti irradiated in X530

Energy Technology Data Exchange (ETDEWEB)

Gelles, D.S. [Pacific Northwest National Lab., Richland, WA (United States); Chung, H.M. [Argonne Natinonal Lab., IL (United States)

1997-08-01

Microstructural examination results are reported for two heats of V-(4-5%)Cr-(4-5%)Ti irradiated in the X530 experiment to {approximately}400{degrees}C to provide an understanding of the microstructural evolution that may be associated with degradation of mechanical properties. Fine precipitates were observed in high density intermixed with small defect clusters for all conditions examined following the irradiation. The irradiation-induced precipitation does not appear to be affected by preirradiation heat treatment at 950-1125{degrees}C. There was no evidence for a significant density of large (diameter >10 nm) dislocation loops or network dislocations.

Irradiation techniques at BR2 reactor

International Nuclear Information System (INIS)

Hebel, W.

1978-01-01

Since 1963 the material testing reactor BR2 at Mol is operated for the realisation of numerous research programs and experiments on the behavior of materials under nuclear radiation and in particular under intensive neutron exposure. During this period special irradiation techniques and experimental devices were developed according to the desiderata of the different experiments and to the irradiation possibilities offered at BR2. The design and the operating characteristics of quite a number of those irradiation rigs of proven reliability may be used or can be made available for new irradiation experiments. A brief description is given of some typical irradiation devices designed and constructed by CEN/SCK, Technology and Energy Dpt. They are compiled according to their main use for the different research and development programs realized at BR2. Their eventual application however for different objectives could be possible. A final chapter summarizes the principal irradiation conditions offered by BR2 reactor. (author)

Electron beam dosimetry for a thin-layer absorber irradiated by 300-keV electrons

International Nuclear Information System (INIS)

Kijima, Toshiyuki; Nakase, Yoshiaki

1993-01-01

Depth-dose distributions in thin-layer absorbers were measured for 300-keV electrons from a scanning-type irradiation system, the electrons having penetrated through a Ti-window and an air gap. Irradiations of stacks of cellulose triacetate(CTA) film were carried out using either a conveyor (i.e. dynamic irradiation) or fixed (i.e. static) irradiation. The sample was irradiated using various angles of incidence of electrons, in order to examine the effect of obliqueness of electron incidence at low-energy representative of routine radiation curing of thin polymeric or resin layers. Dynamic irradiation gives broader and shallower depth-dose distributions than static irradiation. Greater obliqueness of incident electrons gives results that can be explained in terms of broader and shallower depth-dose distributions. The back-scattering of incident electrons by a metal(Sn) backing material enhances the absorbed dose in a polymeric layer and changes the overall distribution. It is suggested that any theoretical estimations of the absorbed dose in thin layers irradiated in electron beam curing must be accomplished and supported by experimental data such as that provided by this investigation. (Author)

Lactose and sucrose aqueous solutions for high-dose dosimetry with 10-MeV electron beam irradiation

International Nuclear Information System (INIS)

Amraei, R.; Kheirkhah, M.; Raisali, G.

2012-01-01

In the present study, dosimetric characterisation of aqueous solutions of lactose and sucrose was analysed by UV spectrometry following irradiation using 10-MeV electron beam at doses between 0.5 and 10.5 kGy. As a dosimetric index, absorbance is selected at 256 and 264 nm for lactose and sucrose aqueous solutions, respectively. The intensity of absorbance for irradiated solutions depends on the pre-irradiation concentration of lactose and sucrose. The post-irradiation stability of both solutions was investigated at room temperature for a measurement period of 22 d. (authors)

Reversible superhydrophilicity and hydrophobicity switching of V2O5 thin films deposited by magnetron sputtering

Science.gov (United States)

Zhang, Chunzi; Peng, Zhiguang; Cui, Xiaoyu; Neil, Eric; Li, Yuanshi; Kasap, Safa; Yang, Qiaoqin

2018-03-01

V2O5 thin films are well-known "smart" materials due to their reversible wettability under UV irradiation and dark storage. Their surfaces are usually hydrophobic and turn into hydrophilic under UV irradiation. However, the V2O5 thin films deposited by magnetron sputtering in present work are superhydrophilic and turned into hydrophobic after days' of storage in air. This change can be recovered by heating. The effects of many factors including surface roughness, irradiation from visible light, UV, & X-ray, and storage in air & vacuum on the reversible switching of wettability were investigated. The results show that air absorption is the main factor causing the film surface change from superhydrophilicity to hydrophobicity.

Interface-mediated amorphization of coesite by 200 keV electron irradiation

International Nuclear Information System (INIS)

Gong, W.L.; Wang, L.M.; Ewing, R.C.; Xie, H.S.

1997-01-01

Electron-induced amorphization of coesite was studied as a function of irradiation temperature by in situ transmission electron microscopy at an incident energy of 200 keV. Electron-induced amorphization of coesite is induced by an ionization mechanism and is mainly dominated by an interface-mediated, heterogeneous nucleation-and-growth controlled process. Amorphous domains nucleate at surfaces, crystalline-amorphous (c-a) interfaces, and grain boundaries. This is the same process as the interface-mediated vitrification of coesite by isothermal annealing above the thermodynamic melting temperature (875 K), but below the glass transition temperature (1480 K). The interface-mediated amorphization of coesite by electron irradiation is morphologically similar to interface-mediated thermodynamic melting. copyright 1997 American Institute of Physics

Ion-irradiation-induced phase transformation in rare earth sesquioxides (Dy2O3,Er2O3,Lu2O3)

International Nuclear Information System (INIS)

Tang, M.; Lu, P.; Valdez, J.A.; Sickafus, K.E.

2006-01-01

Polycrystalline pellets of cubic C-type rare earth structure (Ia3) Dy 2 O 3 , Er 2 O 3 , and Lu 2 O 3 were irradiated at cryogenic temperature (120 K) with 300 keV Kr ++ ions to a maximum fluence of 1x10 20 Kr/m 2 . Irradiated specimens were examined using grazing incidence x-ray diffraction and transmission electron microscopy. Ion irradiation leads to different radiation effects in these three materials. First, Dy 2 O 3 begins to transform to a monoclinic B-type rare earth structure (C2/m) at a peak dose of ∼5 displacements per atom (dpa) (corresponding to a fluence of 2x10 19 Kr/m 2 ). This transformation is nearly complete at a peak dose of 25 dpa (a fluence of 1x10 20 Kr/m 2 ). Er 2 O 3 also transforms to the B-type structure, but the transformation starts at a higher irradiation dose of about 15-20 dpa [a fluence of about (6-8)x10 19 Kr/m 2 ]. Lu 2 O 3 was found to maintain the C-type structure even at the highest irradiation dose of 25 dpa (a fluence of 1x10 20 Kr/m 2 ). No C-to-B transformation was observed in Lu 2 O 3 . The irradiation dose dependence of the C-to-B phase transformation observed in Dy 2 O 3 , Er 2 O 3 , and Lu 2 O 3 is closely related to the temperature dependence of the C-to-B phase transformation found in phase diagrams for these three materials

Tensile and fracture properties of EBR-II-irradiated V-15Cr-5Ti containing helium

International Nuclear Information System (INIS)

Grossbeck, M.L.; Horak, J.A.

1986-01-01

The alloy V-15Cr-5Ti was cyclotron-implanted with 80 appM He and subsequently irradiated in the Experimental Breeder Reactor (EBR-II) to 30 dpa. The same alloy was also irradiated in the 10, 20, and 30% cold-worked conditions. Irradiation temperatures ranged from 400 to 700 0 C. No significant effects of helium on mechanical properties were found in this temperature range although the neutron irradiation shifted the temperature of transition from cleavage to ductile fracture to about 625 0 C. Ten percent cold work was found to have a beneficial effect in reducing the tendency for cleavage fracture following irradiation, but high levels (20%) were observed to reduce ductility. Still higher levels (30%) improved ductility by inducing recovery during the elevated-temperature irradiation. Swelling was found to be negligible, but precipitates - titanium oxides or carbonitrides - contained substantial cavities

Exposure times and ratio of readings produced by irradiation of thermoluminescence dosemeters in PTB neutron standard fields between 0.1 MeV and 19 MeV

International Nuclear Information System (INIS)

Jahr, R.; Guldbakke, S.; Cosack, M.

1979-06-01

6 LiF and 7 LiF thermoluminescence dosimeters (TLD) irradiated in a standard field of monoenergetic neutrons (Esub(n) = 0.1 MeV to 19 MeV), respond as well to the photon as to the neutron component of this radiation field. The ratio of the two TLD readings as well as the duration of irradiation required to obtain a preset TLD reading are calculated as a function of the neutron energy. (orig.) [de

Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor

International Nuclear Information System (INIS)

Dinesh, C.M.; Ramani; Radhakrishna, M.C.; Dutt, R.N.; Khan, S.A.; Kanjilal, D.

2008-01-01

Silicon NPN overlay RF power high speed commercial bipolar junction transistors (BJTs) find applications in military, space and communication equipments. Here we report the effect of 50 MeV Li 3+ ion irradiation in the fluence range 1 x 10 11 -1.8 x 10 12 ions cm -2 on NPN power transistor. The range (R), electronic energy loss (S e ), nuclear energy loss (S n ), total ionizing dose (TID) and total displacement damage (D d ) in the silicon target are calculated from TRIM Monte Carlo Code. Output resistance is 3.568 x 10 4 Ω for unirradiated device and it increases to 6 x 10 7 Ω as the fluence is increased from 1 x 10 11 to 1.8 x 10 12 ions cm -2 . The capacitance of the emitter-base junction of the transistor decreases and dielectric loss of the emitter-base junction increases with increase in ion fluence. The built in voltage of the unirradiated sample is 0.5 V and it shifts to 0.4 V after irradiation at fluence of 1.8 x 10 12 ions cm -2 and the corresponding doping density reduced to 5.758 x 10 16 cm -3 . The charge carrier removal rate varies linearly with the increase in ion fluence

Fluctuation Induced Conductivity Studies of 100 MeV Oxygen Ion Irradiated Pb Doped Bi-2223 Superconductors

NARCIS (Netherlands)

Banerjee, Tamalika; Kumar, Ravi; Kanjilal, D.; Ramasamy, S.

2000-01-01

We report on 100 MeV oxygen ion irradiation in Pb doped Bi-2223 superconductors. Resistivity measurements reveal that both grains as well as the grain boundaries are affected by such irradiation. An analysis of the excess conductivity has been made within the framework of Aslamazov-Larkin (AL) and

Dewetting and nanopattern formation of thin Pt films on SiO2 induced by ion beam irradiation

International Nuclear Information System (INIS)

Hu, Xiaoyuan; Cahill, David G.; Averback, Robert S.

2001-01-01

Dewetting and nanopattern formation of 3 - 10 nm Pt thin films upon ion irradiation is studied using scanning electron microscopy (SEM). Lateral feature size and the fraction of exposed surface area are extracted from SEM images and analyzed as functions of ion dose. The dewetting phenomenon has little temperature dependence for 3 nm Pt films irradiated by 800 keV Kr + at temperatures ranging from 80 to 823 K. At 893 K, the films dewet without irradiation, and no pattern formation is observed even after irradiation. The thickness of the Pt films, in the range 3 - 10 nm, influences the pattern formation, with the lateral feature size increasing approximately linearly with film thickness. The effect of different ion species and energies on the dewetting process is also investigated using 800 keV Kr + and Ar + irradiation and 19.5keVHe + , Ar + , Kr + , and Xe + irradiation. The lateral feature size and exposed surface fraction scale with energy deposition density (J/cm2) for all conditions except 19.5keVXe + irradiation. [copyright] 2001 American Institute of Physics

A 14 MeV neutron irradiation facility with an automated fast cyclic pneumatic

International Nuclear Information System (INIS)

Montgomery, M.T.; Yoho, M.D.; Biegalski, S.R.; Landsberger, S.; Welch, L.

2016-01-01

This work details the design criteria, construction, controls, and optimization of the 14 MeV neutron irradiation facility at the University of Texas, built with the motivation of performing neutron activation analysis on samples with short half-lives. The facility couples a D-T neutron generator with a pneumatic transfer system capable of transit of approximately one second between source and detector, while the cyclic automated nature allows for many irradiation/count trials with any number of samples, translating to significantly improved counting statistics. (author)

Increase of the electrical resistance of thin copper film due to 14 MeV neutron irradiation

International Nuclear Information System (INIS)

Agrawal, S.K.; Kumar, U.; Nigam, A.K.; Singh, S.P.

1981-01-01

The variation in the electrical resistance of thin copper film (500 A 0 thick), grown on the glass slide has been measured with increasing 14 MeV neutron irradiation time. The electrical resistance vs irradiation time curve shows an interesting behaviour after an irradiation of 40 minutes. However, there is a net increase in the electrical resistance with increasing neutron dose. The maximum increase in the observed electrical resistance after an irradiation of 115 mins, is 4.45%. The microstructural studies of irradiated film were made using TEM and TED techniques. The TEM patterns up to an irradiation time of 1.00 hr do not show any appreciable change in the microstructure. The TED patterns also do not show any appreciable change in the diffraction pattern up to an irradiation time of 1.0 hr. But after an irradiation time of 1.5 hrs, two extra rings appear in the TED pattern which disappear with increasing neutron irradiation time

Persistent photoconductivity and photo-responsible defect in 30 MeV-electron irradiated single crystal ZnO

International Nuclear Information System (INIS)

Kuriyama, K.; Matsumoto, K.; Kushida, K.; Xu, Q.

2010-01-01

Persistent photoconductivity (PPC) in 30-MeV electron irradiated ZnO single crystals is studied by excitation using light emitting diodes (LEDs) with various wavelengths. The decay transient of the photoconductivity shows relaxation times in the range of a few ten days for the illumination at 90 K and a few hours at room temperature. An electron paramagnetic resonance (EPR) signal with g-value = 2.005 appears after illumination of blue LED, suggesting the transfer from the artificially introduced oxygen vacancy of 2+ charge state to the metastable + charge state. Once generated, the metastable state does not immediately decay into the 2+ charge state because of energetic barriers of ∼190 meV, supporting the mechanism of PPC proposed by Van de Walle.

Temperature and 8 MeV electron irradiation effects on GaAs solar cells

Indian Academy of Sciences (India)

1Department of Physics, Mangalore Institute of Technology and Engineering, ... strate were irradiated with 1 MeV electrons, they showed high radiation tolerance ... under both forward and reverse bias in the temperature range of 270–315 K ...

Inhibition of excision repair of DNA in u.v.-irradiated Escherichia coli by phenethyl alcohol

International Nuclear Information System (INIS)

Tachibana, A.; Yonei, S.

1985-01-01

Membrane-specific drugs such as procaine and chlorpromazine have been shown to inhibit excision repair of DNA in u.v.-irradiated E. coli. One possible mechanism is that, if association of DNA with the cell membrane is essential for excision repair, this process may be susceptible to drugs affecting the structure of cell membranes. We examined the effect of phenethyl alcohol, which is a membrane-specific drug and known to dissociate the DNA-membrane complex, on excision repair of DNA in u.v.-irradiated E. coli cells. The cells were irradiated with u.v. light and then held at 30 0 C in buffer (liquid-holding) in the presence or absence of phenethyl alcohol. It was found that phenethyl alcohol inhibits the liquid-holding recovery in both wild-type and recA strains, corresponding to its dissociating action on the DNA-membrane complex. Thus, the association of DNA with cell membrane is an important factor for excision repair in E. coli. Procaine did not show the dissociating effect, suggesting that at least two different mechanisms are responsible for the involvement of cell membrane in excision repair of DNA in E. coli. (author)

Use of microhardness to determine the strengthening and microstructural alterations of 14-MeV-neutron-irradiated metals

International Nuclear Information System (INIS)

Panayotou, N.F.

1982-02-01

Microhardness has been found to be an effective post-irradiation analytical tool. The hardening of recrystallized copper and type 316 stainless steel irradiated up to 1 x 10 18 n/cm 2 , E = 14 MeV, at the Rotating Target Neutron Source (RTNS)-II has been studied. It was determined that for these metals the increase in hardness varies directly with the measured increase in the 0.2 percent offset yield strength. Furthermore the coupled use of microhardness and transmission electron microscope techniques provides an estimate of the defect population which was not resolved by TEM. This estimate in turn, was used to evaluate the magnitude of the proportionality constant used in the strong barrier model of radiation induced hardening

Effect of high-energy electron irradiation in an electron microscope column on fluorides of alkaline earth elements (CaF2, SrF2, and BaF2)

International Nuclear Information System (INIS)

Nikolaichik, V. I.; Sobolev, B. P.; Zaporozhets, M. A.; Avilov, A. S.

2012-01-01

The effect of high-energy (150 eV) electron irradiation in an electron microscope column on crystals of fluorides of alkaline earth elements CaF 2 , SrF 2 , and BaF 2 is studied. During structural investigations by electron diffraction and electron microscopy, the electron irradiation causes chemical changes in MF 2 crystals such as the desorption of fluorine and the accumulation of oxygen in the irradiated area with the formation of oxide MO. The fluorine desorption rate increases significantly when the electron-beam density exceeds the threshold value of ∼2 × 10 3 pA/cm 2 ). In BaF 2 samples, the transformation of BaO into Ba(OH) 2 was observed when irradiation stopped. The renewal of irradiation is accompanied by the inverse transformation of Ba(OH) 2 into BaO. In the initial stage of irradiation of all MF 2 compounds, the oxide phase is in the single-crystal state with a lattice highly matched with the MF 2 matrix. When the irradiation dose is increased, the oxide phase passes to the polycrystalline phase. Gaseous products of MF 2 destruction (in the form of bubbles several nanometers in diameter) form a rectangular array with a period of ∼20 nm in the sample.

Deficient expression of enhanced reactivation of parvovirus H-1 in ataxia telangiectasia cells irradiated with X-rays or u.v. light

International Nuclear Information System (INIS)

Gilgers, Genevieve; Chen, Y.Q.; Cornelis, J.J.; Rommelaere, Jean

1987-01-01

Cells of patients with ataxia telangiectasia (AT), an inherited disease characterized by a high propensity to cancer, are hypersensitive to ionizing radiation. We investigated whether the hyper-radiosensitivity of AT cells correlated with a defect in their constitutive and/or conditional ability to rescue a damaged exogenous virus. For that purpose, parvovirus H-1, a single-stranded DNA virus whose intranuclear replication mostly relies on host cell functions, was used as a probe. The survival of u.v.-or γ-irradiated H-1 was measured in X-, u.v.-or mock-irradiated human cells of normal (NB-E) or AT (AT5BIVA) origin. γ-Irradiated H-1 survived to similar extents in untreated normal and AT cell lines. Both X- and u.v.-irradiation induced normal cells to achieve an enhanced reactivation (ER) of γ- or u.v.-damaged H-1. In contrast, neither dose-effect curves nor time course revealed significant levels of ER expression after X- or u.v.-irradiation in AT5BIVA cells. Our results suggest that the impairment of ER of damaged parvoviruses may constitute a marker of the AT cell phenotype and be related to the radiosensitivity of AT cells. (author)

Deficient expression of enhanced reactivation of parvovirus H-1 in ataxia telangiectasia cells irradiated with X-rays or u. v. light

Energy Technology Data Exchange (ETDEWEB)

Hilgers, G.; Chen, Y.Q.; Cornelis, J.J.; Rommelaere, J.

1987-02-01

Cells of patients with ataxia telangiectasia (AT), an inherited disease characterized by a high propensity to cancer, are hypersensitive to ionizing radiation. We investigated whether the hyper-radiosensitivity of AT cells correlated with a defect in their constitutive and/or conditional ability to rescue a damaged exogenous virus. For that purpose, parvovirus H-1, a single-stranded DNA virus whose intranuclear replication mostly relies on host cell functions, was used as a probe. The survival of u.v.- or gamma-irradiated H-1 was measured in X-, u.v.- or mock-irradiated human cells of normal (NB-E) or AT (AT5BIVA) origin. gamma-Irradiated H-1 survived to similar extents in untreated normal and AT cell lines. Both X- and u.v.-irradiation induced normal cells to achieve an enhanced reactivation (ER) of gamma- or u.v.-damaged H-1. In contrast, neither dose-effect curves nor time course revealed significant levels of ER expression after X- or u.v.-irradiation in AT5BIVA cells. Our results suggest that the impairment of ER of damaged parvoviruses may constitute a marker of the AT cell phenotype and be related to the radiosensitivity of AT cells.

A survey of photoproducts of an irradiated oligodeoxynucleotide by monochromatic photons with the energy ranged from 6.5 to 22.5 eV

International Nuclear Information System (INIS)

Ito, Takashi; Saito, Mikio; Taniguchi, Taketoshi

1987-01-01

We have irradiated 2'-deoxyadenylyl-(3'-5')-2'-deoxyadenosine (dephospho(dA) 2 ) in solid state with a newly developed synchrotron irradiation system over 6.5 to 22.5 eV photon energy range (190 to 55 nm in wavelength). Densitometric analysis of thin-layer chromatogram of photoproducts indicated that adenine and deoxyadenosine monophosphate were commonly produced above 7.3 eV (170 nm) in approximately equal amount. Deoxyribose was not detected by the fluorescence method with scratched materials from the chromatogram at any location except deoxyadenosine monophosphate and parent oligonucleotide positions. The photoproducts above mentioned were not observed at 6.5 eV (190 nm) even after very high radiation fluence. The energy dependence of this degradation indicates that the shorter the wavelength in use the smaller the fluence it requires. Careful examination of irradiated oligonucleotide on the chromatograms shows that the major portion of deoxyadenosine monophosphate so produced was the 5'phospho derivative. This site-selective degradation, independent of photon energy, seemed to be a remarkable characteristic of vacuum-UV induced effects above 7 eV. It is hypothesised that the deoxypentose moiety was first destroyed in one of the nucleoside residues due to the strong absorption in the sugar-phosphate group, liberating adenine on the one hand and leaving 5'-deoxyadenosine monophosphate. (author)

RecA-independent resistance to irradiation with u.v. light in acid-habituated Escherichia coli

International Nuclear Information System (INIS)

Goodson, M.; Rowbury, R.J.

1991-01-01

Growth of Escherichia coli 1829 ColV, I-K94 at pH 5.0 led to an increase in u.v. resistance compared with cells grown at pH 7.0. This was due to a phenotypic change, since organisms grown at pH 7.0 showed increased resistance after only 2.5-5.0 min incubation at the mildly acid pH. Other E. coli K12 derivatives became more u.v.-resistant at pH 5.0 including uvrA, recA and polAl mutants. Organisms grown at pH 5.0 also showed increased Weigle reactivation of u.v. irradiated λ phage and this applied to the repair-deficient mutants as well as the parent strains. Both the increased u.v. resistance of acid-habituated cells and their increased ability to bring about Weigle reactivation appear to involve RecA-independent processes and are presumably, therefore, independent of the SOS response. (author)

Tensile and fracture properties of EBR-II-irradiated V-15Cr-5Ti containing helium

Energy Technology Data Exchange (ETDEWEB)

Grossbeck, M.L.; Horak, J.A.

1986-01-01

The alloy V-15Cr-5Ti was cyclotron-implanted with 80 appM He and subsequently irradiated in the Experimental Breeder Reactor (EBR-II) to 30 dpa. The same alloy was also irradiated in the 10, 20, and 30% cold-worked conditions. Irradiation temperatures ranged from 400 to 700/sup 0/C. No significant effects of helium on mechanical properties were found in this temperature range although the neutron irradiation shifted the temperature of transition from cleavage to ductile fracture to about 625/sup 0/C. Ten percent cold work was found to have a beneficial effect in reducing the tendency for cleavage fracture following irradiation, but high levels (20%) were observed to reduce ductility. Still higher levels (30%) improved ductility by inducing recovery during the elevated-temperature irradiation. Swelling was found to be negligible, but precipitates - titanium oxides or carbonitrides - contained substantial cavities.

Void formation in cold-worked type 316 stainless steel irradiated with 1-MeV protons