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Sample records for ir sb fpas

  1. The recent and prospective developments of cooled IR FPAs for double application at Electron NRI

    Science.gov (United States)

    Arutunov, V. A.; Vasilyev, I. S.; Ivanov, V. G.; Prokofyev, A. E.

    2003-09-01

    The recent and prospective developments of monolithic silicon IR-Schottky-barrier staring focal plane arrays (IR SB FPAs), photodetector assembly, and digital thermal imaging cameras (TICs) at Electron National Research Institute (Electron NRI) are considered. Basic parameters for IR SB FPAs with 256x256 and 512x512 pixels, and TICs based on these arrays are presented. The problems emerged while proceeding from the developments of IR SB FPAs for the wavelength range from 3 μm to 5 μm to the developments of those ones for xLWIR range are indicated (an abrupt increase in the level of background architecture). Possibility for further improvement in basic parameters of IR SB FPAs are discussed (a decrease in threshold signal power down to 0.5-1.0"1013 W/element with an increase in quantum efficiency, a decrease in output noise and proceeding to Schottky barriers of degenerated semiconductor/silicon heterojunction, and implementation of these array parameters in photodetector assembly with improved thermal background shielding taking into consideration an optical structure of TIC for concrete application). It is concluded that relative simplicity of the technology and expected low cost of monolithic silicon IR SB FPAs with basic parameters compared with hybrid IR FPAs for the wavelength ranges from 3 μm to 5 μm and from 8 μm to 12 μm maintain large monolithic IR SB FPAs as a basis for developments of double application digital TICs in the Russian Federation.

  2. Structural, electronic, and thermal properties of indium-filled InxIr4Sb12 skutterudites

    Science.gov (United States)

    Wallace, M. K.; Li, Jun; Subramanian, M. A.

    2018-06-01

    The "phonon-glass/electron-crystal" approach has been implemented through incorporation of "rattlers" into skutterudite void sites to increase phonon scattering and thus increase the thermoelectric efficiency. Indium filled IrSb3 skutterudites are reported for the first time. Polycrystalline samples of InxIr4Sb12 (0 ≤ x ≤ 0.2) were prepared by solid-state reaction under a gas mixture of 5% H2 and 95% Ar. The solubility limit of InxIr4Sb12 was found to be close to 0.18. Synchrotron X-ray diffraction refinements reveal all InxIr4Sb12 phases crystallized in body-centered cubic structure (space group : Im 3 bar) with ∼8% antimony site vacancy and with indium partially occupying the 16f site. Unlike known rattler filled skutterudites, under synthetic conditions employed, indium filling in IrSb3 significantly increases the electrical resistivity and decreases the Seebeck coefficient (n-type) while reducing the thermal conductivity by ∼30%. The resultant power factor offsets the decrease in total thermal conductivity giving rise to a substantial decrease in ZT. Principal thermoelectric properties of InxM4Sb12 (M = Co, Rh, Ir) phases are compared. As iridium is a 5d transition metal, zero field cooled (ZFC) magnetization were performed to unravel the effect of spin-orbit interaction on the electronic properties. These results serve to advance the understanding of filled skutterudites, and provide additional insight on the less explored smaller "rattlers" and their influence on key thermoelectric properties.

  3. Next generation HgCdTe FPAs for high frame rate characterization of thermal protective systems, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Typical existing infrared (IR) focal plane arrays (FPAs) have high spatial resolution over large areas due to their high pixel counts, however they can only...

  4. Multi-Color QWIP FPAs for Hyperspectral Thermal Emission Instruments

    Science.gov (United States)

    Soibel, Alexander; Luong, Ed; Mumolo, Jason M.; Liu, John; Rafol, Sir B.; Keo, Sam A.; Johnson, William; Willson, Dan; Hill, Cory J.; Ting, David Z.-Y.; hide

    2012-01-01

    Infrared focal plane arrays (FPAs) covering broad mid- and long-IR spectral ranges are the central parts of the spectroscopic and imaging instruments in several Earth and planetary science missions. To be implemented in the space instrument these FPAs need to be large-format, uniform, reproducible, low-cost, low 1/f noise, and radiation hard. Quantum Well Infrared Photodetectors (QWIPs), which possess all needed characteristics, have a great potential for implementation in the space instruments. However a standard QWIP has only a relatively narrow spectral coverage. A multi-color QWIP, which is compromised of two or more detector stacks, can to be used to cover the broad spectral range of interest. We will discuss our recent work on development of multi-color QWIP for Hyperspectral Thermal Emission Spectrometer instruments. We developed QWIP compromising of two stacks centered at 9 and 10.5 ?m, and featuring 9 grating regions optimized to maximize the responsivity in the individual subbands across the 7.5-12 ?m spectral range. The demonstrated 1024x1024 QWIP FPA exhibited excellent performance with operability exceeding 99% and noise equivalent differential temperature of less than 15 mK across the entire 7.5-12 ?m spectral range.

  5. Resistivity and magnetoresistance studies of Nb3Ir and V3Sb compounds

    International Nuclear Information System (INIS)

    Ghosh, M.; Barman, A.; Das, A.; Meikap, A.K.; De, S.K.; Chatterjee, S.

    1997-01-01

    We have performed measurements of electrical resistivity and magnetoresistivity of the compounds Nb 3 Ir and V 3 Sb in the temperature range 1.8 K ≤ T ≤ 300 K in absence as well as in presence of a magnetic field up to 7.7 T. At high temperature the resistivity shows a linear behaviour whereas the low temperature resistivity shows a T 2 behaviour. The data are fitted to several theories in order to explain the anomalous behaviour of the resistivity. The simple s-d scattering model is not adequate to offer a proper explanation for the positive magnetoresistance. The enhancement of the coefficient A of the T 2 term and the deviation from the quadratic field dependence of the resistivity may be due to the anisotropy in the compounds. (orig.)

  6. InAsSb for IR detection at 12 μm

    International Nuclear Information System (INIS)

    Dawson, L.R.

    1989-01-01

    The authors report the molecular beam epitaxial (MBE) growth of InAsSb alloys and superlattices on InSb substrates with intervening buffer layers designed to provide a lattice match to the SLS. Efficient incorporation of As is achieved by using an As 2 (thermally cracked) source in conjunction with an Sb 2 source at growth temperature of 425-450 0 C. At these temperatures desorption of excess Sb from the surface is limited and careful control of the Sb:In ratio is required. Even though the growth temperature is quite near the melting point of the alloys involved (525-550 0 C), TEM reveals abrupt, planar interfaces in superlattices with layer thicknesses less than 150 A. Undoped InSb layers are very pure, with n(77K) -- 1 x 10 14 cm -3 and μ(77K) --280,000 cm 2 V -1 sec -1 . Doping is easily controlled up to -- 10 18 using Be and PbSe. The entire structure (buffer plus SLS) is in tension with respect to the parent substrate, leading to extensive cracking for conventional buffer layers. More complex buffers, designed to more effectively relax the material to its equilibrium lattice constant, are used to solve this cracking problem. InAsSb SLSs grown on such buffer layers are crack-free and show marked reduction in dislocation density relative to that of the buffer layer. FTIR measurements made on SLSs with different compositions and differing amounts of strain in the active regions show optical absorption that is strain-shifted to wavelengths beyond λ c for bulk alloys, with substantial absorption beyond 12 μm

  7. InAs/GaSb type-II superlattice infrared detectors: three decades of development

    Science.gov (United States)

    Rogalski, A.; Kopytko, M.; Martyniuk, P.

    2017-02-01

    Recently, there has been considerable progress towards III-V antimonide-based low dimensional solids development and device design innovations. From a physics point of view, the type-II InAs/GaSb superlattice is an extremely attractive proposition. Their development results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe FPAs at reasonable cost and theoretical predictions of lower Auger recombination for type-II superlattice (T2SL) detectors compared to HgCdTe. Lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall lifetime are equal. Based on these promising results it is obvious now that the InAs/GaSb superlattice technology is competing with HgCdTe third generation detector technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing. Comments to the statement whether the superlattice IR photodetectors can outperform the "bulk" narrow gap HgCdTe detectors is one of the most important questions for the future of IR photodetectors presented by Rogalski at the April 2006 SPIE meeting in Orlando, Florida, are more credible today and are presented in this paper. It concerns the trade-offs between two most competing IR material technologies: InAs/GaSb type-II superlattices and HgCdTe ternary alloy system.

  8. Low-cost thermo-electric infrared FPAs and their automotive applications

    Science.gov (United States)

    Hirota, Masaki; Ohta, Yoshimi; Fukuyama, Yasuhiro

    2008-04-01

    This paper describes three low-cost infrared focal plane arrays (FPAs) having a 1,536, 2,304, and 10,800 elements and experimental vehicle systems. They have a low-cost potential because each element consists of p-n polysilicon thermocouples, which allows the use of low-cost ultra-fine microfabrication technology commonly employed in the conventional semiconductor manufacturing processes. To increase the responsivity of FPA, we have developed a precisely patterned Au-black absorber that has high infrared absorptivity of more than 90%. The FPA having a 2,304 elements achieved high resposivity of 4,300 V/W. In order to reduce package cost, we developed a vacuum-sealed package integrated with a molded ZnS lens. The camera aiming the temperature measurement of a passenger cabin is compact and light weight devices that measures 45 x 45 x 30 mm and weighs 190 g. The camera achieves a noise equivalent temperature deviation (NETD) of less than 0.7°C from 0 to 40°C. In this paper, we also present a several experimental systems that use infrared cameras. One experimental system is a blind spot pedestrian warning system that employs four infrared cameras. It can detect the infrared radiation emitted from a human body and alerts the driver when a pedestrian is in a blind spot. The system can also prevent the vehicle from moving in the direction of the pedestrian. Another system uses a visible-light camera and infrared sensors to detect the presence of a pedestrian in a rear blind spot and alerts the driver. The third system is a new type of human-machine interface system that enables the driver to control the car's audio system without letting go of the steering wheel. Uncooled infrared cameras are still costly, which limits their automotive use to high-end luxury cars at present. To promote widespread use of IR imaging sensors on vehicles, we need to reduce their cost further.

  9. InAs/GaSb type-II superlattice infrared detectors: Future prospect

    Science.gov (United States)

    Rogalski, A.; Martyniuk, P.; Kopytko, M.

    2017-09-01

    Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall (SRH) lifetime are equal. InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cut-off wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in SRH lifetimes. It is predicted that since the future infrared (IR) systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long SRH lifetime will be required. Since T2SLs are very much resisted in attempts to improve its SRH lifetime, currently the only material that meets this requirement is HgCdTe. Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability

  10. Third-generation intelligent IR focal plane arrays

    Science.gov (United States)

    Caulfield, H. John; Jack, Michael D.; Pettijohn, Kevin L.; Schlesselmann, John D.; Norworth, Joe

    1998-03-01

    SBRC is at the forefront of industry in developing IR focal plane arrays including multi-spectral technology and '3rd generation' functions that mimic the human eye. 3rd generation devices conduct advanced processing on or near the FPA that serve to reduce bandwidth while performing needed functions such as automatic target recognition, uniformity correction and dynamic range enhancement. These devices represent a solution for processing the exorbitantly high bandwidth coming off large area FPAs without sacrificing systems sensitivity. SBRC's two-color approach leverages the company's HgCdTe technology to provide simultaneous multiband coverage, from short through long wave IR, with near theoretical performance. IR systems that are sensitive to different spectral bands achieve enhanced capabilities for target identification and advanced discrimination. This paper will provide a summary of the issues, the technology and the benefits of SBRC's third generation smart and two-color FPAs.

  11. Analysis and modeling of optical crosstalk in InP-based Geiger-mode avalanche photodiode FPAs

    Science.gov (United States)

    Chau, Quan; Jiang, Xudong; Itzler, Mark A.; Entwistle, Mark; Piccione, Brian; Owens, Mark; Slomkowski, Krystyna

    2015-05-01

    Optical crosstalk is a major factor limiting the performance of Geiger-mode avalanche photodiode (GmAPD) focal plane arrays (FPAs). This is especially true for arrays with increased pixel density and broader spectral operation. We have performed extensive experimental and theoretical investigations on the crosstalk effects in InP-based GmAPD FPAs for both 1.06-μm and 1.55-μm applications. Mechanisms responsible for intrinsic dark counts are Poisson processes, and their inter-arrival time distribution is an exponential function. In FPAs, intrinsic dark counts and cross talk events coexist, and the inter-arrival time distribution deviates from purely exponential behavior. From both experimental data and computer simulations, we show the dependence of this deviation on the crosstalk probability. The spatial characteristics of crosstalk are also demonstrated. From the temporal and spatial distribution of crosstalk, an efficient algorithm to identify and quantify crosstalk is introduced.

  12. Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

    Science.gov (United States)

    Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew R. J.

    2017-10-01

    InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb0.185 SLS structures, grown as undoped absorption epilayers on GaAs, were fabricated using molecular beam epitaxy in order to study the dependence of the ground state transitions on temperature and superlattice period thickness. Photoluminescence peaks at 4 K were obtained with the use of a helium-cooled micro-PL system and an InSb detector, and temperature-dependent absorption spectra were measured in the range 77 K - 300 K on a Fourier Transform Infrared (FTIR) spectrometer, equipped with a 1370 K blackbody source and a DTGS detector. An nBn device sample with the absorber structure identical to one of the undoped samples was also grown and processed with the goal of measuring temperature-dependent spectral response. A model for superlattice band alignment was also devised, incorporating the Bir-Pikus transformation results for uniaxial and biaxial strain, and the Einstein oscillator model for bandgap temperature dependence. Absorption coefficients of several 1000 cm-1 throughout the entire MWIR range are found for all samples, and temperature dependence of the bandgaps is extracted and compared to the model. This and photoluminescence data also demonstrate bandgap shifts consistent with the different superlattice periods of the three samples.

  13. Extended wavelength InGaAs SWIR FPAs with high performance

    Science.gov (United States)

    Li, Xue; Li, Tao; Yu, Chunlei; Tang, Hengjing; Deng, Shuangyan; Shao, Xiumei; Zhang, Yonggang; Gong, Haimei

    2017-09-01

    The extended InGaAs short wavelength infrared (SWIR) detector covers 1.0-2.5 μm wavelength, which plays an important role in weather forecast, resource observation, low light level systems, and astronomical observation and so on. In order to fabricate the high performance extended InGaAs detector, materials structure and parameters were characterized with Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM), the spreading of minority carriers and lattice quality were obtained. Mesa etching process, etching damage restoration technique and low temperature passivation technique were used in the fabrication of the extended InGaAs detector. The improvement of material structure and device process was studied by fabricating and measuring different perimeter-to-area (P/A) photodiodes and singledevice, respectively. The dark current density of the extended InGaAs detector obviously was reduced, about 2 nA/cm2 at 170 K. The 512×256 FPAs were fabricated, the peak detectivity and the quantum efficiency of which are 5×1011 cmHz1/2/W and 80%, respectively. The staring image yielded of the 512×256 FPAs is shown, which demonstrates very good imaging quality.

  14. Design of a ROIC with 15um pitch for MWIR FPAs

    Science.gov (United States)

    Liang, Qinghua; Jiang, Dazhao; Chen, Honglei; Zhang, Qiwen; Ding, Ruijun

    2015-10-01

    A 640×512 readout integrated circuit (ROIC) with 15um pixel pitch for middle-wave infrared focal plane arrays (MWIR FPAs) is designed in this paper. The 15um pixel pitch presents several challenges to the ROIC design, such as achieving the required charge storage capacity to preserve the high SNR and reading or processing the pixel signals correctly to achieve the required frame rate. A novel structure that four neighboring pixels share one integration capacitor is presented as a feasible approach to getting a large charge capacity in the limited pixel area. Meanwhile, the pixel circuit chooses the direct injection (DI) which occupies the small layout area as the input stage for MW and contains two sample and hold modules to further increase the charge capacity. Moreover,the peripheral analog signal chain circuit, which is composed of a PMOS source follower, a column amplifier and the complementary output stage, is designed to transfer the signals from unit cell with less voltage loss,lower power consumption, lower noise and higher linearity. More importantly, in our design, only half chain circuit are required therefore the corresponding power consumption will be reduced greatly. In order to accommodate this design, two kinds of pixel signal readout sequences are compared. By adopting the 0.18um 1P6M mixed signal CMOS process, the circuit architecture can make the effective charge capacity of 13Me- per pixel with 1.38V final output range. The 4×4 circuit layout will be fulfilled as a whole and in this way the effective integration capacitor can be increased. According to the simulation results, this circuit works well under 3.3V power supply and achieves 10MHZ readout rate and less than 0.1% nonlinearity.

  15. MT3825BA: a 384×288-25µm ROIC for uncooled microbolometer FPAs

    Science.gov (United States)

    Eminoglu, Selim; Gulden, M. Ali; Bayhan, Nusret; Incedere, O. Samet; Soyer, S. Tuncer; Ustundag, Cem M. B.; Isikhan, Murat; Kocak, Serhat; Turan, Ozge; Yalcin, Cem; Akin, Tayfun

    2014-06-01

    output as part of the analog video stream. MT3825BA can be used to build a microbolometer FPAs with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a detector resistance value up to 100 KΩ, a high TCR value (engineered to have flat surface finish to simplify the wafer level detector fabrication and wafer level vacuum packaging (WLVP). The ROIC runs on 3.3 V analog and 1.8 V digital supplies, and dissipates less than 85 mW in the 2-output mode at 30 fps. Mikro-Tasarim provides tested ROIC wafers and offers compact test electronics and software for its ROIC customers to shorten their FPA and camera development cycles.

  16. Optical gain tuning within IR region in type-II In0.5Ga0.5As0.8P0.2/GaAs0.5Sb0.5 nano-scale heterostructure under external uniaxial strain

    Science.gov (United States)

    Singh, A. K.; Rathi, Amit; Riyaj, Md.; Bhardwaj, Garima; Alvi, P. A.

    2017-11-01

    Quaternary and ternary alloy semiconductors offer an extra degree of flexibility in terms of bandgap tuning. Modifications in the wave functions and alterations in optical transitions in quaternary and ternary QW (quantum well) heterostructures due to external uniaxial strain provide valuable insights on the characteristics of the heterostructure. This paper reports the optical gain in strained InGaAsP/GaAsSb type-II QW heterostructure (well width = 20 Å) under external uniaxial strain at room temperature (300 K). The entire heterostructure is supposed to be grown on InP substrate pseudomorphically. Band structure, wave functions, energy dispersion and momentum matrix elements of the heterostructure have been computed. 6 × 6 diagonalised k → ·p → Hamiltonian matrix of the system is evaluated and Luttinger-Kohn model has been applied for the band structure and wavefunction calculations. TE mode optical gain spectrum in the QW-heterostructure under uniaxial strain along [110] is calculated. Optical gain of the heterostructure as a function of 2D carrier density and temperature variation is investigated. The variation of the peak optical gain as a function of As and Sb fractions in InGaAsP as a barrier and GaAsSb as a well respectively is exhibited. For a charge carrier injection of 5 ×1012 /cm2 , the TE optical gain is 3952 cm-1 at room temperature under no external uniaxial strain. Significant increase in TE mode optical gain is observed under high external uniaxial strain (1, 5 and 10 GPa) along [110] within IR (Infrared region) region.

  17. Yield of 117Sb, 118mSb, 120mSb, 122Sb, 124Sb in reactions Sn (p, xn)

    International Nuclear Information System (INIS)

    Dmitriev, P.P.; Konstantinov, I.O.

    1993-01-01

    Yield of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb from thick target depending on proton energy is measured. The maximum proton energy is 21.7±0.2 MeV. Antimony isotopes yield in separate reactions when irradiating of tin isotopes with 100% enrichment is determined using the method published earlier. The methods for production of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb with high radioisotope purity are shown. 13 refs., 1 fig., 3 tabs

  18. Development of IR imaging at IRnova

    Science.gov (United States)

    Martijn, Henk; Asplund, Carl; Malm, Hedda; Smuk, Sergiy; Höglund, Linda; Gustafsson, Oscar; Hammar, Mattias; Hellström, Staffan

    2009-05-01

    Historically IRnova has exclusively been a company, focused on manufacturing of QWIP detectors. Nowadays, besides continuous improvements of the performance of QWIP FPAs and development of new formats IRnova is involved in development of QWIP detectors for special applications and has started the development of the next generation infrared detectors, as well. In the light of the development of new formats we validate experimentally theoretical calculations of the response of QWIPs for smaller pixel size. These results allow for the development of high performance megapixel QWIP FPA that exhibit the high uniformity and operability QWIP detectors are known for. QWIP is also being considered for space applications. The requirements on dark current and operating temperature are however much more stringent as compared to the terrestrial applications. We show ways to improve the material quality with as a result a higher detector operating temperature. IRnova is also looking at antimony-based strained superlattice material for the LWIR region together with partners at the IMAGIC centre of excellence. One of the ways to overcome the problem with surface currents is passivating overgrowth. We will report the status and results of overgrowing the detector mesas with AlGa(As)Sb in a MOVPE system. At the same centre of excellence a novel material concept is being developed for LWIR detection. This new material contains a superlattice of vertically aligned and electronically coupled InAs and GaSb quantum dots. Simulations show that it should be possible to have LWIR detection in this material. We will present the current status and report results in this research.

  19. Comparison of the electrochemical performance of mesoscopic Cu2Sb, SnSb and Sn/SnSb alloy powders

    International Nuclear Information System (INIS)

    Zhang Ge; Huang Kelong; Liu Suqin; Zhang Wei; Gong Benli

    2006-01-01

    Cu 2 Sb, SnSb and Sn/SnSb mesoscopic alloy powders were prepared by chemical reduction, respectively. The crystal structures and particle morphology of Cu 2 Sb, SnSb and Sn/SnSb were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrochemical performances of the Cu 2 Sb, SnSb and Sn/SnSb electrodes were investigated by galvanostatic charge and discharge cycling and electrochemical impedance spectroscopy (EIS). The results showed the first charge and discharge capacities of SnSb and Sn/SnSb were higher than Cu 2 Sb, but after 15 cycles, the charge capacity fading rates of Cu 2 Sb, Sn/SnSb and Sn/SnSb were 26.16%, 55.33% and 47.39%, respectively. Cu 2 Sb had a better cycle performance, and Sn/SnSb multiphase alloy was prior to pure SnSb due to the existence of excessive Sn in Sn/SnSb system

  20. Synthesis and vibrational spectrum of antimony phosphate, SbPO4.

    Science.gov (United States)

    Brockner, Wolfgang; Hoyer, Lars P

    2002-07-01

    SbPO4 was synthesized via a new route by reacting antimony metal with meta-phosphoric acid, (HPO3)n at high temperatures. The Raman and IR spectra of the title compound were recorded and the vibrational modes assigned on the basis of a factor group analysis. The internal vibrations are derived from tetrahedral PO4 units (approaching Sb[PO4]) by the correlation method, although the structure is polymeric and not ionic.

  1. Small-pixel long wavelength infrared focal plane arrays based on InAs/GaSb Type-II superlattice

    Science.gov (United States)

    Han, Xi; Jiang, Dongwei; Wang, Guowei; Hao, Hongyue; Sun, Yaoyao; Jiang, Zhi; Lv, Yuexi; Guo, Chunyan; Xu, Yingqiang; Niu, Zhichuan

    2018-03-01

    The paper reports a 640 × 512 long wavelength infrared focal plane arrays (FPAs) with 15 × 15 μm2 pixels pitch based on the type II InAs/GaSb superlattice. Material grown on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 10.2 μm across the entire wafer. The peak quantum efficiency of the detector reaches 28% at 9.1 μm without anti-reflecting coating. Maximal resistance-area products of 8.95 Ω·cm2 at 77 K and 24.4 Ω·cm2 at 45 K are achieved in a single element device indicating that the generation-recombination and tunneling mechanisms dominate the device dark current, respectively. The peak Johnson Detectivity reaches 9.66 × 1011 cm Hz1/2/W at 9.1 μm with the bias voltage of 80 mV. In the whole zone, the operability and non-uniformity for the responsivity are 97.74% and 6.41% respectively. The average noise equivalent temperature difference of 31.9 mK at 77 K is achieved with an integration time of 0.5 ms, a 300 K background and f/2 optics.

  2. Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

    Science.gov (United States)

    Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

    2018-05-01

    A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

  3. DWPF SB6 Initial CPC Flowsheet Testing SB6-1 TO SB6-4L Tests Of SB6-A And SB6-B Simulants

    International Nuclear Information System (INIS)

    Lambert, D.; Pickenheim, B.; Best, D.

    2009-01-01

    The Defense Waste Processing Facility (DWPF) will transition from Sludge Batch 5 (SB5) processing to Sludge Batch 6 (SB6) processing in late fiscal year 2010. Tests were conducted using non-radioactive simulants of the expected SB6 composition to determine the impact of varying the acid stoichiometry during the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) processes. The work was conducted to meet the Technical Task Request (TTR) HLW/DWPF/TTR-2008-0043, Rev.0 and followed the guidelines of a Task Technical and Quality Assurance Plan (TT and QAP). The flowsheet studies are performed to evaluate the potential chemical processing issues, hydrogen generation rates, and process slurry rheological properties as a function of acid stoichiometry. These studies were conducted with the estimated SB6 composition at the time of the study. This composition assumed a blend of 101,085 kg of Tank 4 insoluble solids and 179,000 kg of Tank 12 insoluble solids. The current plans are to subject Tank 12 sludge to aluminum dissolution. Liquid Waste Operations assumed that 75% of the aluminum would be dissolved during this process. After dissolution and blending of Tank 4 sludge slurry, plans included washing the contents of Tank 51 to ∼1M Na. After the completion of washing, the plan assumes that 40 inches on Tank 40 slurry would remain for blending with the qualified SB6 material. There are several parameters that are noteworthy concerning SB6 sludge: (1) This is the second batch DWPF will be processing that contains sludge that has had a significant fraction of aluminum removed through aluminum dissolution; (2) The sludge is high in mercury, but the projected concentration is lower than SB5; (3) The sludge is high in noble metals, but the projected concentrations are lower than SB5; and(4) The sludge is high in U and Pu - components that are not added in sludge simulants. Six DWPF process simulations were completed in 4-L laboratory-scale equipment using

  4. Distribution, speciation and availability of antimony (Sb) in soils and terrestrial plants from an active Sb mining area

    International Nuclear Information System (INIS)

    Okkenhaug, Gudny; Zhu Yongguan; Luo Lei; Lei Ming; Li Xi; Mulder, Jan

    2011-01-01

    Here, we present one of the first studies investigating the mobility, solubility and the speciation-dependent in-situ bioaccumulation of antimony (Sb) in an active Sb mining area (Xikuangshan, China). Total Sb concentrations in soils are high (527-11,798 mg kg -1 ), and all soils, including those taken from a paddy field and a vegetable garden, show a high bioavailable Sb fraction (6.3-748 mg kg -1 ), dominated by Sb(V). Elevated concentrations in native plant species (109-4029 mg kg -1 ) underpin this. Both chemical equilibrium studies and XANES data suggest the presence of Ca[Sb(OH) 6 ] 2 , controlling Sb solubility. A very close relationship was found between the citric acid extractable Sb in plants and water or sulfate extractable Sb in soil, indicating that citric acid extractable Sb content in plants may be a better predictor for bioavailable Sb in soil than total acid digestible Sb plant content. - Highlights: → Antimony (Sb) in soils from an active Sb mining area is highly bioavailable. → Sb occurs mainly as Sb(V) in Sb mining impacted soils and plants. → Sb solubility in Sb mining impacted soils is governed by Ca[Sb(OH) 6 ] 2 . → Citric acid extractable Sb in plants and bioavailable Sb in soils are strongly correlated. - Antimony (Sb) in soils from an active Sb mining area is highly bioavailable and controlled by the solubility of calcium antimonate.

  5. Astronomical imaging with a low temperature InSb charge injection device (CID)

    International Nuclear Information System (INIS)

    Rouan, D.; Lacombe, F.; Tiphene, D.; Stefanovitch, D.; Phan van, D.

    1986-01-01

    InSb charge injection device (CID) technology focal plane arrays employ two coupled MIS capacitors which collect and store photon-generated charge carriers. Attention is presently given to two-dimensional arrays for 77 K and 4 K operating temperatures in astronomical applications; two such prototypes for ground observations have been developed for use with a 2-m telescope. A CID InSb array is noted to be a useful candidate for the proposed IR Space Observatory's focal plane camera. 7 references

  6. Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films

    Energy Technology Data Exchange (ETDEWEB)

    Song, Ki-Ho; Kim, Sung-Won; Seo, Jae-Hee [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of); Lee, Hyun-Yong, E-mail: hyleee@chonnam.ac.k [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of)

    2009-05-29

    We have investigated the optical and amorphous-to-crystalline transition properties in four-types of chalcogenide thin films; Ge{sub 2}Sb{sub 2}Te{sub 5}, Ge{sub 8}Sb{sub 2}Te{sub 11}, Ag-Ge{sub 2}Sb{sub 2}Te{sub 5} and Ag-Ge{sub 8}Sb{sub 2}Te{sub 11}. Crystallization was caused by nano-pulse illumination ({lambda} = 658 nm) with power (P) of 1-17 mW and pulse duration (t) of 10-460 ns, and the morphologies of crystallized spots were observed by SEM and microscope. It was found that the crystallized spot nearby linearly increases in size with increasing the illuminating energy (E = P {center_dot} t) and eventually ablated out by over illumination. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-vis-IR spectrophotometer. In addition, a speed of amorphous-to-crystalline transition was evaluated by detecting the reflection response signals for the nano-pulse scanning. Conclusively, the Ge{sub 8}Sb{sub 2}Te{sub 11} film has a faster crystallization speed than the Ge{sub 2}Sb{sub 2}Te{sub 5} film despite its higher crystallization temperature. The crystallization speed was largely improved by adding Ag in Ge{sub 2}Sb{sub 2}Te{sub 5} film but not in Ge{sub 8}Sb{sub 2}Te{sub 11} film. To explain these results, we considered a heat confinement by electron hopping.

  7. Bonding in ZnSb

    DEFF Research Database (Denmark)

    Bjerg, Lasse; Madsen, Georg K. H.; Iversen, Bo Brummerstedt

    Thermoelectric materials are capable of converting waste heat into usable electric energy. The conversion efficiency depends critically on the electronic band structure. Theoretical calculations predict the semiconducting ZnSb to have a promising efficiency if it is n-doped. The details of the lo......Thermoelectric materials are capable of converting waste heat into usable electric energy. The conversion efficiency depends critically on the electronic band structure. Theoretical calculations predict the semiconducting ZnSb to have a promising efficiency if it is n-doped. The details...... of the lowest conduction band have therefore been investigated. Electrons placed in the lowest conduction band are predicted to increase the bonding between second nearest neighbour atoms. This causes a lowering of the energy at special points in the first Brillouin zone. Thereby, the dispersion of the lowest...

  8. IOT Overview: IR Instruments

    Science.gov (United States)

    Mason, E.

    In this instrument review chapter the calibration plans of ESO IR instruments are presented and briefly reviewed focusing, in particular, on the case of ISAAC, which has been the first IR instrument at VLT and whose calibration plan served as prototype for the coming instruments.

  9. Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

    OpenAIRE

    Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando

    2001-01-01

    Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusio...

  10. Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

    Science.gov (United States)

    Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

    2001-05-01

    Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

  11. Sequential and simultaneous adsorption of Sb(III) and Sb(V) on ferrihydrite: Implications for oxidation and competition.

    Science.gov (United States)

    Qi, Pengfei; Pichler, Thomas

    2016-02-01

    Antimony (Sb) is a naturally occurring element of growing environmental concern whose toxicity, adsorption behavior and other chemical properties are similar to that of arsenic (As). However, less is known about Sb compared to As. Individual and simultaneous adsorption experiments with Sb(III) and Sb(V) were conducted in batch mode with focus on the Sb speciation of the remaining liquid phase during individual Sb(III) adsorption experiments. The simultaneous adsorption and oxidation of Sb(III) was confirmed by the appearance of Sb(V) in the solution at varying Fe/Sb ratios (500, 100 and 8) and varying pH values (3.8, 7 and 9). This newly formed Sb(V) was subsequently removed from solution at a Fe/Sb ratio of 500 or at a pH of 3.8. However, more or less only Sb(V) was observed in the liquid phase at the end of the experiments at lower Fe/Sb ratios and higher pH, indicating that competition took place between the newly formed Sb(V) and Sb(III), and that Sb(III) outcompeted Sb(V). This was independently confirmed by simultaneous adsorption experiments of Sb(III) and Sb(V) in binary systems. Under such conditions, the presence of Sb(V) had no influence on the adsorption of Sb(III) while Sb(V) adsorption was significantly inhibited by Sb(III) over a wide pH range (4-10). Thus, in the presence of ferrihydrite and under redox conditions, which allow the presence of both Sb species, Sb(V) should be the dominant species in aquatic environments, since Sb(III) is adsorbed preferentially and at the same time oxidized to Sb(V). Copyright © 2015 Elsevier Ltd. All rights reserved.

  12. Low-temperature synthesis of single-phase Co7Sb2O12

    International Nuclear Information System (INIS)

    Brito, M.S.L.; Escote, M.T.; Santos, C.O.P.; Lisboa-Filho, P.N.; Leite, E.R.; Oliveira, J.B.L.; Gama, L.; Longo, E.

    2004-01-01

    Polycrystalline Co 7 Sb 2 O 12 compounds have been synthesized by a chemical route, which is based on a modified polymeric precursor method. In order to study the physical properties of the samples, X-ray diffraction (XRD), thermal analyses (TG and DSC), infrared spectroscopy (IR), specific surface area (BET), and magnetization measurements were performed on these materials. Characterization through XRD revealed that the samples are single-phase after a heat-treatment at 1100 deg. C for 2 h, while the X-ray patterns of the samples heat-treated at lower temperatures revealed the presence of additional Bragg reflections belonging to the Co 6 Sb 2 O 6 phase. These data were analyzed by means of Rietveld refinement and further analyze showed that Co 7 Sb 2 O 12 displays an inverse spinel crystalline structure. In this structure, the Co 2+ ions occupy the eight tetrahedral positions, and the sixteen octahedral positions are randomly occupied by the Sb 5+ and Co 2+ ions. IR studies disclosed two strong absorption bands, ν 1 and ν 2 , in the expected spectral range for a spinel-type binary oxide with space group Fd3m. Exploratory studies concerning the magnetic properties indicated that this sample presents a spin-glass transition at T f ∼ 64 K

  13. Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure

    International Nuclear Information System (INIS)

    Arpapay, B.; Şahin, S.; Arıkan, B.; Serincan, U.

    2014-01-01

    The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different Sb beam equivalent pressure (BEP) levels and two different termination temperatures. Surface morphologies of epilayers were examined by wet etching, surface profiler, atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The results demonstrate that during the cooling period, a Sb BEP of 4.00 × 10 −4 Pa at a termination temperature of 400 °C induces a smooth surface without Sb condensation whereas same Sb BEP at a termination temperature of 350 °C forms a 300 nm thick Sb layer on the surface. In addition, it is revealed that by applying a wet etching procedure and using a surface profiler it is possible to identify this condensed layer from the two-sloped feature of mesa profile. - Highlights: • Sb beam flux termination temperature is crucial for redundant Sb condensation. • Sb beam flux level has a role on the thickness of redundant condensed Sb layer. • Redundant Sb layer thickness can be measured by two-sloped mesa structure

  14. Room-temperature broadband InAsSb flip-chip photodiodes with λcutoff = 4.5 μm

    International Nuclear Information System (INIS)

    Zakhgeim, A. L.; Zotova, N. V.; Il'inskaya, N. D.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Chernyakov, A. E.

    2009-01-01

    Equilibrium and nonequilibrium IR images of p-InAsSbP/n-InAsSb/n + -InAs photodiodes including the images obtained in the electroluminescence and negative luminescence modes have been analyzed. The contact reflectivity has been evaluated. The influence of the substrate's doping level and mesa depth on the quantum efficiency and sensitivity of a backside illuminated photodiode sensitive in the 2.7-4.5 μm range is discussed.

  15. Room-temperature broadband InAsSb flip-chip photodiodes with {lambda}{sub cutoff} = 4.5 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Zakhgeim, A L [Russian Academy of Sciences, Scientific-Technological Center for Microelectronics and Submicron Heterostructures at Ioffe Physicotechnical Institute (Russian Federation); Zotova, N V; Il' inskaya, N D; Karandashev, S A; Matveev, B. A., E-mail: bmat@iropt3.ioffe.rssi.ru; Remennyi, M A; Stus' , N M [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Chernyakov, A E [Russian Academy of Sciences, Scientific-Technological Center for Microelectronics and Submicron Heterostructures at Ioffe Physicotechnical Institute (Russian Federation)

    2009-03-15

    Equilibrium and nonequilibrium IR images of p-InAsSbP/n-InAsSb/n{sup +}-InAs photodiodes including the images obtained in the electroluminescence and negative luminescence modes have been analyzed. The contact reflectivity has been evaluated. The influence of the substrate's doping level and mesa depth on the quantum efficiency and sensitivity of a backside illuminated photodiode sensitive in the 2.7-4.5 {mu}m range is discussed.

  16. Alternative synthetic route for the heterometallic CO-releasing [Sb@Rh12(CO27]3− icosahedral carbonyl cluster and synthesis of its new unsaturated [Sb@Rh12(CO24]4− and dimeric [{Sb@Rh12Sb(CO25}2Rh(CO2PPh3]7− derivatives

    Directory of Open Access Journals (Sweden)

    Cristina Femoni

    2016-10-01

    Full Text Available The hetero-metallic [Sb@Rh12(CO27]3− cluster has been known as for over three decades thanks to Vidal and co-workers, and represents the first example of an E-centered (E=heteroatom icosahedral rhodium carbonyl cluster. However, its synthesis required high temperature (140–160 °C and elevated CO pressure (400 atm. Applying the redox condensation method for cluster preparation, we herein report a new synthetic, high-yield route for preparing [Sb@Rh12(CO27]3− under much milder conditions of temperature and pressure. Notably, when the same synthesis was carried out under N2 instead of CO atmosphere, the new isostructural but unsaturated derivative [Sb@Rh12(CO24]4− was obtained, for which we report the full X-ray structural characterization. This species represents one of the few examples of an icosahedral cluster disobeying the electron-counting Wade-Mingos rules, possessing less than the expected 170 cluster valence electrons (CVEs. Judging from IR monitoring, the two species can be obtained one from the other by switching between N2 and CO atmosphere, making [Sb@Rh12(CO27]3− a spontaneous CO-releasing molecule. Finally, the study of the chemical reactivity of [Sb@Rh12(CO27]3− with PPh3 allowed us to obtain the new [{Sb@Rh12Sb(CO25}2Rh(CO2PPh3]7− dimeric compound, for which we herein report the full X-ray structural and 31P NMR analyses.

  17. Zr3NiSb7: a new antimony-enriched ZrSb2 derivative

    Directory of Open Access Journals (Sweden)

    V. Romaka

    2008-08-01

    Full Text Available Single crystals of trizirconium nickel heptaantimonide were synthesized from the constituent elements by arc-melting. The compound crystallizes in a unique structure type and belongs to the family of two-layer structures. All crystallographically unique atoms (3 × Zr, 1 × Ni and 7 × Sb are located at sites with m symmetry. The structure contains `Zr2Ni2Sb5' and `Zr4Sb9' fragments and might be described as a new ZrSb2 derivative with a high Sb content.

  18. Density functional simulations of Sb-rich GeSbTe phase change alloys

    OpenAIRE

    Gabardi, S; Caravati, S; Bernasconi, M; Parrinello, M

    2012-01-01

    We generated models of the amorphous phase of Sb rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1Sb 1Te 1 and Ge 2Sb 4Te 5. Comparison with previous results on the most studied Ge 2Sb 2Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high fr...

  19. Dissimilatory Sb(V) reduction by microorganisms isolated from Sb-contaminated sediment

    Science.gov (United States)

    Dovick, M. A.; Kulp, T. R.

    2013-12-01

    Mining and smelting are major sources of trace metal contamination in freshwater systems. Arsenic (As) is a common contaminant derived from certain mining operations and is a known toxic metalloid and carcinogen. Antimony (Sb) is listed as a pollutant of priority interest by the EPA and is presumed to share similar geochemical and toxicological properties with arsenic. Both elements can occur in four different oxidation states (V, III, 0, and -III) under naturally occurring conditions. In aqueous solutions As(V) and Sb(V) predominate in oxygenated surface waters whereas As(III) and Sb(III) are stable in anoxic settings. Numerous studies have examined microbiological redox pathways that utilize As(V) as a terminal electron acceptor for anaerobic respiration, however there have been few studies on microbial mechanisms that may affect the biogeochemical cycling of Sb in the environment. Here we report bacterial reduction of Sb(V) to Sb(III) in anoxic enrichment cultures and bacterial isolates grown from sediment collected from an Sb contaminated pond at a mine tailings site in Idaho (total pond water Sb concentration = 235.2 +/- 136.3 ug/L). Anaerobic sediment microcosms (40 mL) were established in artificial freshwater mineral salt medium, amended with millimolar concentrations of Sb(V), acetate or lactate, and incubated at 27°C for several days. Antimony(V), lactate, and acetate concentrations were monitored during incubation by High Performance Liquid Chromatography (HPLC) and Ion Chromatography (IC). Live sediment microcosms reduced millimolar amendments of Sb(V) to Sb(III) coupled to the oxidation of acetate and lactate, while no activity occurred in killed controls. Enrichment cultures were established by serially diluting Sb(V)-reducing microcosms in mineral salt medium with Sb(V) and acetate, and a Sb(V)-reducing bacterial strain was isolated by plating on anaerobic agar plates amended with millimolar Sb(V) and acetate. Direct cell counting demonstrated that

  20. New superconductor LaRhSb

    International Nuclear Information System (INIS)

    Nishigori, S.; Moriwaki, H.; Suzuki, T.; Fujita, T.; Tanaka, H.; Takabatake, T.; Fujii, H.

    1994-01-01

    Superconductivity in LaRhSb was newly found below the transition temperature T c = 2.67 K by the measurements of the electrical resistivity, magnetic susceptibility and specific heat in magnetic fields. The characteristics of the superconductivity determined in this study indicate that LaRhSb is a type II superconductor following the BCS theory. (orig.)

  1. Density functional simulations of Sb-rich GeSbTe phase change alloys

    International Nuclear Information System (INIS)

    Gabardi, S; Bernasconi, M; Caravati, S; Parrinello, M

    2012-01-01

    We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1 Sb 1 Te 1 and Ge 2 Sb 4 Te 5 . Comparison with previous results on the most studied Ge 2 Sb 2 Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm -1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge 2 Sb 2 Te 5 . All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

  2. Density functional simulations of Sb-rich GeSbTe phase change alloys

    Science.gov (United States)

    Gabardi, S.; Caravati, S.; Bernasconi, M.; Parrinello, M.

    2012-09-01

    We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge1Sb1Te1 and Ge2Sb4Te5. Comparison with previous results on the most studied Ge2Sb2Te5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm-1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge2Sb2Te5. All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

  3. High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

    International Nuclear Information System (INIS)

    Wu, B.-R.; Liao, C.; Cheng, K. Y.

    2008-01-01

    High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

  4. Crystallographic study of the intermediate compounds SbZn, Sb3Zn4 and Sb2Zn3

    International Nuclear Information System (INIS)

    Adjadj, Fouzia; Belbacha, El-djemai; Bouharkat, Malek; Kerboub, Abdellah

    2006-01-01

    The processes of development of semiconductor ceramics made up of bismuth, antimony and zinc often require during their preparation to know the nature of the involved phases. For that, it is always essential to refer to the diagrams of balance between phases of the binary systems or ternary. We presented in this work the study by X-rays diffraction relating to the intermediate compounds SbZn, Sb 3 Zn 4 and Sb 2 Zn 3 . The analysis by X-rays is often useful to give supplement the results of the other experimental methods

  5. Thermodynamic stability studies of Ce-Sb compounds with Fe

    Science.gov (United States)

    Xie, Yi; Zhang, Jinsuo; Benson, Michael T.; Mariani, Robert D.

    2018-02-01

    Lanthanide fission products can migrate to the fuel periphery and react with cladding, causing fuel-cladding chemical interaction (FCCI). Adding a fuel additive dopant, such as Sb, can bind lanthanide, such as Ce, into metallic compounds and thus prevent migration. The present study focuses on the thermodynamic stability of Ce-Sb compounds when in contact with the major cladding constituent Fe by conducting diffusion couple tests. Ce-Sb compounds have shown high thermodynamic stability as they did not react with Fe. When Fe-Sb compounds contacted with Ce, Sb was separated out of Fe-Sb compounds and formed the more stable Ce-Sb compounds.

  6. Defect Structure of High-Temperature-Grown GaMnSb/GaSb

    International Nuclear Information System (INIS)

    Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

    2010-01-01

    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

  7. Structural and Electronic Features of Sb-Based Electrode Materials: 121Sb Moessbauer Spectrometry

    International Nuclear Information System (INIS)

    Ionica, C. M.; Aldon, L.; Lippens, P. E.; Morato, F.; Olivier-Fourcade, J.; Jumas, J.-C.

    2004-01-01

    Lithium insertion mechanisms in two antimony based compounds: CoSb 3 and CoSb have been studied by means of 121 Sb Moessbauer spectrometry. Structural and electronic modifications induced by insertion of lithium have been characterised for different depths of discharge. In all cases the insertion mechanisms can be described from several steps. In the first step antimony is partially dispersed in the metallic matrix with amorphisation of the electrode material and in a second step we can observe the alloy forming (Li 3 Sb). However this amorphous alloy remains in interaction with the matrix allowing then a good reversibility.

  8. Tetrahedral 1B4Sb nanoclusters in GaP:(B, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Elyukhin, V A, E-mail: elyukhin@cinvestav.m [Departamento de Ingenieria Electrica-SEES, CINVESTAV-IPN, Avenida IPN 2508, Col. San Pedro Zacatenco, C. P. 07360, Mexico, D. F. (Mexico)

    2009-05-01

    Self-assembling conditions of 1B4Sb tetrahedral nanoclusters in GaP doped with boron and Sb isoelectronic impurities are represented in the ultradilute and dilute limits of the boron and Sb contents, respectively. The fulfilled estimates demonstrated the preferential complete or almost complete allocation of boron atoms in 1B4Sb nanoclusters at temperatures of 500 {sup 0}C and 900 {sup 0}C, respectively. The significant decrease of the sum of the free energies of the constituent compounds is the main origin of self-assembling. The reduction of the strain energy is the additional cause of this phenomenon.

  9. Decay of /sup 125/Sb

    Energy Technology Data Exchange (ETDEWEB)

    Singh, K; Sahota, H S

    1983-01-01

    The 2.7 yr beta decay of /sup 125/Sb yields /sup 125/Te has been studied using Ge(Li), Si(Li) and Ge detectors and the directional correlation technique New lines at 58, 111, 642, 693 and 729 keV have been detected and fitted in the decay scheme in the already existing levels, besides the one suggested at 729 keV. The intensities of 20, 109, 111, 116, 172, 178 and 198 keV transitions have been measured more precisely than before. The ..gamma..-..gamma.. directional correlation measurements in the 208-463, 204-176 and 321-176 keV cascades have enabled to assign a uniquue spin 7/2/sup -/ to the 525 keV level. The multipole mixing ratios for the 204, 208 and 321 keV transitions have been found as M1 + (14.75 +- 3.55)%E2, M1 + (4.5 +- 2.0)%E2 and E1 + (2.70 +- 0.75)%M2, respectively.

  10. The equilibrium diagram and some properties of alloys Gd5Sb3-Tb5Sb3 system

    International Nuclear Information System (INIS)

    Azizov, Yu.S.; Abulkhaev, V.D.; Ganiev, I.N.

    2001-01-01

    The purpose of present work is investigation equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system in total range of concentrations. Equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system investigated by methods of difference-thermal, roentgen-phase and metallographic analyses. For the first time on the base of difference-thermal, roentgen-phase and metallographic analyses was formed the equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system. Was determined the cristal-chemical parameters of solid solutions with general formula Gd x Tb 5 - x Sb 3

  11. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  12. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors. Growth and properties

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Lien

    2011-04-13

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In{sub 1-x}Mn{sub x}Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 {mu}m, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm{sup 2}/V s Vs with associated electron concentration of 2.9.10{sup 6} cm{sup -3} at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm{sup 2}/V s measured at 300 K, with an associated carrier concentration of 2.6.10{sup 1}6 cm{sup -3} is found for the best sample that was grown at 340 C with a 0.06 {mu}m-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In{sub 1-x}Mn{sub x}Sb/GaAs (001) is prepared by adding a few percent of Mn into the

  13. Polarity-dependent resistance switching in GeSbTe phase-change thin films : The importance of excess Sb in filament formation

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Oosthoek, Jasper L. M.; van den Dool, Pim; Palasantzas, George; Pauza, Andrew

    2009-01-01

    We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge(2)Sb(2+x)Te(5) and stoichiometric Ge(2)Sb(2)Te(5) samples. This type of switching in Ge(2)Sb(2+x)Te(5) films is reversible with

  14. IR and the Earth

    DEFF Research Database (Denmark)

    Corry, Olaf; Stevenson, Hayley

    2017-01-01

    , in the end, one finite interconnected space. Together these two starting points make for the basic conundrum of Inter- national Relations and the Earth: how does a divided world live on a single globe? This introduction first provides an overview of the recent rise of ‘the environment’ in international......, ‘what has the environment ever done for IR?’, before the plan for the rest of the book sketches the content and direction of the ensuing chapters that explore the problematique of International Relations and the Earth....

  15. DWPF simulant CPC studies for SB8

    Energy Technology Data Exchange (ETDEWEB)

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

  16. DWPF simulant CPC studies for SB8

    International Nuclear Information System (INIS)

    Koopman, D. C.; Zamecnik, J. R.

    2013-01-01

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

  17. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zakgeim, A. L. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation); Il’inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A., E-mail: ioffeled@mail.ru; Matveev, B. A.; Remennyy, M. A.; Stus’, N. M.; Usikova, A. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Cherniakov, A. E. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation)

    2017-02-15

    The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λ{sub max} = 3.4 μm) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.

  18. Detailed IR aperture measurements

    CERN Document Server

    Bruce, Roderik; Garcia Morales, Hector; Giovannozzi, Massimo; Hermes, Pascal Dominik; Mirarchi, Daniele; Quaranta, Elena; Redaelli, Stefano; Rossi, Carlo; Skowronski, Piotr Krzysztof; Wretborn, Sven Joel; CERN. Geneva. ATS Department

    2016-01-01

    MD 1673 was carried out on October 5 2016, in order to investigate in more detail the available aperture in the LHC high-luminosity insertions at 6.5 TeV and β∗=40 cm. Previous aperture measurements in 2016 during commissioning had shown that the available aperture is at the edge of protection, and that the aperture bottleneck at β∗=40 cm in certain cases is found in the separation plane instead of in the crossing plane. Furthermore, the bottlenecks were consistently found in close to the upstream end of Q3 on the side of the incoming beam, and not in Q2 on the outgoing beam as expected from calculations. Therefore, this MD aimed at measuring IR1 and IR5 separately (at 6.5 TeV and β∗=40 cm, for 185 µrad half crossing angle), to further localize the bottlenecks longitudinally using newly installed BLMs, investigate the difference in aperture between Q2 and Q3, and to see if any aperture can be gained using special orbit bumps.

  19. Reduction in thermal conductivity of BiSbTe lump

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Kaleem [King Saud University, Sustainable Energy Technologies Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia); Wan, C. [Tsinghua University, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing (China); Al-Eshaikh, M.A.; Kadachi, A.N. [King Saud University, Research Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia)

    2017-03-15

    In this work, systematic investigations on the thermal conductivities of BiSbTe lump, microstructured pristine BiSbTe bulk and single wall carbon nanotubes (SWCNTs)/BiSbTe bulk nanocomposites were performed. BiSbTe lumps were crushed to form a coarse powder (200 μm) and effect of particle size reduction on the effective thermal conductivity of BiSbTe (200 μm) bulk were analyzed. For further reduction in the conductivity, a two pronged strategy has been employed. First, additional refinement of BiSbTe (200 μm) were performed through ball milling in an inert environment. Second, SWCNTs in 0.75, and 1.0 vol% were distributed uniformly in the fine BiSbTe ball milled powder. The results showed that the effective thermal conductivities decrease with the reduction in the particle size from lump to BiSbTe (200 μm) bulk as well as with the addition of SWCNTs accompanied by further refinement of BiSbTe particles. The significant reduction in thermal conductivities of the lump was achieved for pure BiSbTe (200 μm) bulk and 0.75 vol% of SWCNTs/BiSbTe composite. This can be ascribed to the enhanced phonon scattering by the grain boundaries between the nanostructured BiSbTe particles as well as the interfaces between BiSbTe and the low dimensional carbon nanotubes. (orig.)

  20. Sb(V reactivity with human blood components: redox effects.

    Directory of Open Access Journals (Sweden)

    Silvana López

    Full Text Available We assessed the reactivity of Sb(V in human blood. Sb(V reactivity was determined using an HPLC-HG-AFS hyphenated system. Sb(V was partially reduced to Sb(III in blood incubation experiments; however, Sb(III was a highly unstable species. The addition of 0.1 mol L(-1 EDTA prevented Sb(III oxidation, thus enabling the detection of the reduction of Sb(V to Sb(III. The transformation of Sb(V to Sb(III in human whole blood was assessed because the reduction of Sb(V in human blood may likely generate redox side effects. Our results indicate that glutathione was the reducing agent in this reaction and that Sb(V significantly decreased the GSH/GSSG ratio from 0.32 ± 0.09 to 0.07 ± 0.03. Moreover, the presence of 200 ng mL(-1 of Sb(V increased the activity of superoxide dismutase from 4.4 ± 0.1 to 7.0 ± 0.4 U mL(-1 and decreased the activity of glutathione peroxidase from 62 ± 1 to 34 ± 2 nmol min(-1 mL(-1.

  1. Compositional and structural characterisation of GaSb and GaInSb

    International Nuclear Information System (INIS)

    Corregidor, V.; Alves, E.; Alves, L.C.; Barradas, N.P.; Duffar, Th.; Franco, N.; Marques, C.; Mitric, A.

    2005-01-01

    Low band gap III-V semiconductors are researched for applications in thermophotovoltaic technology. GaSb crystal is often used as a substrate. Ga 1-x In x Sb is also a promising substrate material, because its lattice parameters can be adjusted by controlling x. We used a new method to synthesise GaSb and GaInSb, in which a high frequency alternate magnetic field is used to heat, to melt and to mix the elements. We present a compositional and structural characterisation of the materials using a combination of complementary techniques. Rutherford backscattering was used to determine accurately the composition of the GaSb. With proton induced X-ray emission in conjunction with a 3 x 3 μm 2 micro-beam we studied the homogeneity of the samples. Structural analysis and phase identification were done with X-ray diffraction. The results for GaSb show a homogeneous composition while the GaInSb samples were found to be strongly heterogeneous at the end of the ingot. The ingots produced are competitive feed material, when compared to other growth techniques, to be used in a second step for the production of good quality ternary crystals

  2. The Fermi surface of CeSb

    International Nuclear Information System (INIS)

    Crabtree, G.W.; Aoki, H.; Joss, W.; Hulliger, F.

    1987-01-01

    This paper uses accurate Fermi surface measurements as a test of hybridization models in CeSb. Detailed measurements of the Fermi surface geometry and effective masses are presented which show a number of unusual properties associated with the magnetic structure and anisotropy. Measurements are compared with predictions of a band structure in which the f-electron is assumed to be local, interacting with the conduction electrons only through anisotropic Coulomb and exchange interactions. This model reproduces all the unusual features observed in the measurements and suggests that hybridization is not essential to describing the electronic properties of CeSb

  3. Binuclear model of an Sb-galaxy

    International Nuclear Information System (INIS)

    Nezhinskij, E.M.

    1980-01-01

    To explain the causes of origin of the observed peculiarities of SB-galaxies a self-consistent stable model of an Sb-galaxy is constructed. The evolutionary scheme of origin of this model is described. The model consists of an extensive spherical corona, of two point nuclei and of a cloud of particles of infinitely small mass, the latter being bar-shaped and situated in the neighbourhood of the nuclei. The model has the following properties: the nuclei move along the circular orbit, whose centre coincides with that of the corona; the motion of the particles of the bar-shaped cloud is stable in the sense of Hill [ru

  4. Quadrupole interaction studies of Hg in Sb

    International Nuclear Information System (INIS)

    Soares, J.C.; Krien, K.; Herzog, P.; Folle, H.R.; Freitag, K.; Reuschenbach, F.; Reuschenbach, M.; Trzcinski, R.

    1978-01-01

    Time differential perturbed angular correlation and nuclear orientation studies of the electric quadrupole interaction for Hg in Sb have been performed. The effective field gradients at room temperature and below 0.05K have been derived. These two values are no indication for an anomalous temperature dependence of the effective field gradient for Hg in Sb. The value of the electric field gradient fits well into the systematics for Hg in other hosts. It is shown that the electronic enhancements of the field gradients are correlated to the valence of the impurities and are rather insensitive to the host properties. (orig./HPOE) [de

  5. 121Sb-NMR study of filled skutterudite CeOs4Sb12

    International Nuclear Information System (INIS)

    Yogi, M.; Niki, H.; Mukuda, H.; Kitaoka, Y.; Sugawara, H.; Sato, H.

    2007-01-01

    121 Sb nuclear magnetic resonance (NMR) of filled skutterudite compound CeOs 4 Sb 12 has been carried out to investigate a spin fluctuation below T∼25K. In spite of a powdered sample, many sharp peaks, similar to a data for single crystal, were observed because of an orientation of the sample from the anisotropy of the magnetization. A numerical calculation well reproduces resonance fields for Sb(1) sites with H parallel V zz . The nuclear spin-lattice relaxation rate divided by temperature 1/T 1 T shows continuous decrease with increasing magnetic field, indicating a suppression of the spin fluctuation by the field

  6. A Study of GaAsSb Nanowires by Molecular Beam Epitaxy for Near IR Applications

    Science.gov (United States)

    2015-09-18

    Mosca, S. Franchi , P. Frigeri, E. Gombia, A. Carnera, M. Peroni, Mater. Science and Eng. B 80, 32 (2001). 1 Appendix C Pavan...Hossain N, Hild K, Jin S R, Sweeney S J, Yu S Q, Johnson S R, Ding D and Zhang Y H 2010 Photonics Global Conference IEEE 1 14 [3] Hwang J S, Tsai J T, Su

  7. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors: Growth and properties

    International Nuclear Information System (INIS)

    Tran, Lien

    2011-01-01

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In 1-x Mn x Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 μm, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm 2 /V s Vs with associated electron concentration of 2.9.10 6 cm -3 at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm 2 /V s measured at 300 K, with an associated carrier concentration of 2.6.10 1 6 cm -3 is found for the best sample that was grown at 340 C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In 1-x Mn x Sb/GaAs (001) is prepared by adding a few percent of Mn into the host material InSb during growth. I have

  8. The IRS-1 signaling system.

    Science.gov (United States)

    Myers, M G; Sun, X J; White, M F

    1994-07-01

    Insulin-receptor substrate 1 (IRS-1) is a principal substrate of the receptor tyrosine kinase for insulin and insulin-like growth factor 1, and a substrate for a tyrosine kinase activated by interleukin 4. IRS-1 undergoes multisite tyrosine phosphorylation and mediates downstream signals by 'docking' various proteins that contain Src homology 2 domains. IRS-1 appears to be a unique molecule; however, 4PS, a protein found mainly in hemopoietic cells, may represent another member of this family.

  9. Kinematics of Rotation in Joints of the Lower Limbs and Pelvis during Gait: Early Results—SB ACLR Approach versus DB ACLR Approach

    Directory of Open Access Journals (Sweden)

    Andrzej Czamara

    2015-01-01

    Full Text Available It is difficult to find publications comparing rotation kinematics in large joints of the lower limbs and pelvis during gait in patients after single-bundle (SB reconstruction of the anterior cruciate ligament (ACLR with double-bundle (DB ACLR of the knee. The aim of this study was to compare rotation kinematics in ankle, knee, and hip joints and the pelvis during gait in the 14th week after SB and DB ACLR. The subjects were males after SB (n=10 and DB (n=13 ACLR and a control group (n=15. The values of kinematic parameters were recorded during internal (IR and external (ER rotation in the joints during gait using the BTS SMART. The SB ACLR group obtained significantly higher values of ER in the involved knee comparing to DB ACLR and controls and excessive IR in the hip comparing to controls. In the DB ACLR group, excessive ER was noted in the involved leg's foot. Comparing with the DB ACLR and control groups, SB ACLR subjects had more substantial disorders of rotation kinematics in the lower limb joints. However, in both ACLR groups, 14 weeks of postoperative physiotherapy were not enough to fully restore rotation kinematics in joints of the lower limbs during gait.

  10. Sulfuric Acid Corrosion of Low Sb - Pb Battery Alloys | Ntukogu ...

    African Journals Online (AJOL)

    The corrosion properties of low Sb - Pb alloys developed for maintenance free motive power industrial batteries was studied by a bare grid constant current method and compared to those of the conventional Pb- 6% Sb alloy. Low Sb-Pb alloys with Se and As grain refiners were found to have higher corrosion rates than the ...

  11. SULFURIC ACID CORROSION OF LOW Sb - Pb BATTERY ALLOYS

    African Journals Online (AJOL)

    user

    1983-09-01

    Sep 1, 1983 ... (Manuscript received February,1983). ABSTRACT. The corrosion properties of low Sb - Pb alloys developed for maintenance free motive power industrial batteries was studied by a bare grid constant current method and compared to those of the conventional. Pb- 6% Sb alloy. Low Sb-Pb alloys with Se and ...

  12. Building Planner Commitment : Are California's SB 375 and Oregon's SB 1059 Models for Climate-Change Mitigation?

    Science.gov (United States)

    2017-11-01

    California's Sustainable Communities and Climate Protection Act (SB 375) and the Oregon Sustainable Transportation Initiative (SB 1059) have made them the first states in the nation to try and reduce greenhouse gas (GHG) emissions using the transport...

  13. Recovering Parameters of Johnson's SB Distribution

    Science.gov (United States)

    Bernard R. Parresol

    2003-01-01

    A new parameter recovery model for Johnson's SB distribution is developed. This latest alternative approach permits recovery of the range and both shape parameters. Previous models recovered only the two shape parameters. Also, a simple procedure for estimating the distribution minimum from sample values is presented. The new methodology...

  14. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

    Czech Academy of Sciences Publication Activity Database

    Mikhailova, M. P.; Ivanov, E.V.; Moiseev, K. D.; Yakovlev, Yu. P.; Hulicius, Eduard; Hospodková, Alice; Pangrác, Jiří; Šimeček, Tomislav

    2010-01-01

    Roč. 44, č. 1 (2010), 66-71 ISSN 1063-7826 Institutional research plan: CEZ:AV0Z10100521 Keywords : electroluninescence * MOVPE * GaSb * InAs * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.603, year: 2010

  15. Growth of In x Ga1-x Sb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments.

    Science.gov (United States)

    Inatomi, Y; Sakata, K; Arivanandhan, M; Rajesh, G; Nirmal Kumar, V; Koyama, T; Momose, Y; Ozawa, T; Okano, Y; Hayakawa, Y

    2015-01-01

    In x Ga 1- x Sb is an important material that has tunable properties in the infrared (IR) region and is suitable for IR-device applications. Since the quality of crystals relies on growth conditions, the growth process of alloy semiconductors can be examined better under microgravity (μG) conditions where convection is suppressed. To investigate the dissolution and growth process of In x Ga 1- x Sb alloy semiconductors via a sandwiched structure of GaSb(seed)/InSb/GaSb(feed) under normal and μG conditions. In x Ga 1- x Sb crystals were grown at the International Space Station (ISS) under μG conditions, and a similar experiment was conducted under terrestrial conditions (1G) using the vertical gradient freezing (VGF) method. The grown crystals were cut along the growth direction and its growth properties were studied. The indium composition and growth rate of grown crystals were calculated. The shape of the growth interface was nearly flat under μG, whereas under 1G, it was highly concave with the initial seed interface being nearly flat and having facets at the peripheries. The quality of the μG crystals was better than that of the 1G samples, as the etch pit density was low in the μG sample. The growth rate was higher under μG compared with 1G. Moreover, the growth started at the peripheries under 1G, whereas it started throughout the seed interface under μG. Kinetics played a dominant role under 1G. The suppressed convection under μG affected the dissolution and growth process of the In x Ga 1- x Sb alloy semiconductor.

  16. Can iron plaque affect Sb(III) and Sb(V) uptake by plants under hydroponic conditions

    NARCIS (Netherlands)

    Ji, Ying; Lenz, Markus; Lenz, Markus; Schulin, Rainer; Tandy, Susan

    2018-01-01

    Antimony (Sb) contamination of soils is of concern due to h uman activities such as recycling of Sb containing Pb acid batteries, shooting and mining. However Sb uptake by plants is poorly documented, especially when plants are growing on waterlogged soils and iron plaques form on their roots. The

  17. Lower lattice thermal conductivity in SbAs than As or Sb monolayers: a first-principles study.

    Science.gov (United States)

    Guo, San-Dong; Liu, Jiang-Tao

    2017-12-06

    Phonon transport in group-VA element (As, Sb and Bi) monolayer semiconductors has been widely investigated in theory, and, of them, monolayer Sb (antimonene) has recently been synthesized. In this work, phonon transport in monolayer SbAs is investigated with a combination of first-principles calculations and the linearized phonon Boltzmann equation. It is found that the lattice thermal conductivity of monolayer SbAs is lower than those of both monolayer As and Sb, and the corresponding sheet thermal conductance is 28.8 W K -1 at room temperature. To understand the lower lattice thermal conductivity in monolayer SbAs than those in monolayer As and Sb, the group velocities and phonon lifetimes of monolayer As, SbAs and Sb are calculated. The calculated results show that the group velocities of monolayer SbAs are between those of monolayer As and Sb, but that the phonon lifetimes of SbAs are smaller than those of both monolayer As and Sb. Hence, the low lattice thermal conductivity in monolayer SbAs is attributed to very small phonon lifetimes. Unexpectedly, the ZA branch has very little contribution to the total thermal conductivity, only 2.4%, which is obviously different from those of monolayer As and Sb with very large contributions. This can be explained by very small phonon lifetimes for the ZA branch of monolayer SbAs. The lower lattice thermal conductivity of monolayer SbAs compared to that of monolayer As or Sb can be understood by the alloying of As (Sb) with Sb (As), which should introduce phonon point defect scattering. We also consider the isotope and size effects on the lattice thermal conductivity. It is found that isotope scattering produces a neglectful effect, and the lattice thermal conductivity with a characteristic length smaller than 30 nm can reach a decrease of about 47%. These results may offer perspectives on tuning the lattice thermal conductivity by the mixture of multiple elements for applications of thermal management and

  18. Sorghum phytochrome B inhibits flowering in long days by activating expression of SbPRR37 and SbGHD7, repressors of SbEHD1, SbCN8 and SbCN12.

    Directory of Open Access Journals (Sweden)

    Shanshan Yang

    Full Text Available Light signaling by phytochrome B in long days inhibits flowering in sorghum by increasing expression of the long day floral repressors PSEUDORESPONSE REGULATOR PROTEIN (SbPRR37, Ma1 and GRAIN NUMBER, PLANT HEIGHT AND HEADING DATE 7 (SbGHD7, Ma6. SbPRR37 and SbGHD7 RNA abundance peaks in the morning and in the evening of long days through coordinate regulation by light and output from the circadian clock. 58 M, a phytochrome B deficient (phyB-1, ma3R genotype, flowered ∼60 days earlier than 100 M (PHYB, Ma3 in long days and ∼11 days earlier in short days. Populations derived from 58 M (Ma1, ma3R, Ma5, ma6 and R.07007 (Ma1, Ma3, ma5, Ma6 varied in flowering time due to QTL aligned to PHYB/phyB-1 (Ma3, Ma5, and GHD7/ghd7-1 (Ma6. PHYC was proposed as a candidate gene for Ma5 based on alignment and allelic variation. PHYB and Ma5 (PHYC were epistatic to Ma1 and Ma6 and progeny recessive for either gene flowered early in long days. Light signaling mediated by PhyB was required for high expression of the floral repressors SbPRR37 and SbGHD7 during the evening of long days. In 100 M (PHYB the floral activators SbEHD1, SbCN8 and SbCN12 were repressed in long days and de-repressed in short days. In 58 M (phyB-1 these genes were highly expressed in long and short days. Furthermore, SbCN15, the ortholog of rice Hd3a (FT, is expressed at low levels in 100 M but at high levels in 58 M (phyB-1 regardless of day length, indicating that PhyB regulation of SbCN15 expression may modify flowering time in a photoperiod-insensitive manner.

  19. Liquidus Projection and Isothermal Section of the Sb-Se-Sn System

    Science.gov (United States)

    Chang, Jui-shen; Chen, Sinn-wen

    2017-12-01

    Sb-Se-Sn ternary alloys are promising chalcogenide materials. The liquidus projection and 673.2 K (400 °C) isothermal section of the Sb-Se-Sn ternary system are determined. Numerous Sb-Se-Sn alloys are prepared, and their primary solidification phases are examined. In addition to the three terminal phases, (Sb), (Se) and (Sn), there are Sb2Sn3, SbSn, SnSe, SnSe2, Sb2Se3, Sn2Sb9Se9, and SnSb2Se4 phases. In addition, there are two miscibility gaps along the Sb-Se and Se-Sn and sides. There are ten invariant reactions in the Sb-Se-Sn ternary system, and seven of them are experimentally determined in this study. The lowest reaction temperature of determined invariant reaction is L + SbSn = (Sn) + SnSe at 515.4 K ± 5 K (242.2 °C ± 5 °C). There are nine tie-triangles, which are Liquid + SbSn + SnSe, SbSn + SnSe + (Sb), SnSe + (Sb) + Sn2Sb9Se9, (Sb) + Sb2Se3 + Sn2Sb9Se9, SnSe + Sn2Sb9Se9 + SnSb2Se4, Sb2Se3 + Sn2Sb9Se9 + SnSb2Se4, SnSe + SnSe2 + SnSb2Se4, SnSe2 + SnSb2Se4 + Sb2Se3, and SnSe2 + Sb2Se3 + Liquid in the 673.2 K (400 °C) isothermal section of the Sb-Se-Sn ternary system.

  20. Simulation of sampling effects in FPAs

    Science.gov (United States)

    Cook, Thomas H.; Hall, Charles S.; Smith, Frederick G.; Rogne, Timothy J.

    1991-09-01

    The use of multiplexers and large focal plane arrays in advanced thermal imaging systems has drawn renewed attention to sampling and aliasing issues in imaging applications. As evidenced by discussions in a recent workshop, there is no clear consensus among experts whether aliasing in sensor designs can be readily tolerated, or must be avoided at all cost. Further, there is no straightforward, analytical method that can answer the question, particularly when considering image interpreters as different as humans and autonomous target recognizers (ATR). However, the means exist for investigating sampling and aliasing issues through computer simulation. The U.S. Army Tank-Automotive Command (TACOM) Thermal Image Model (TTIM) provides realistic sensor imagery that can be evaluated by both human observers and TRs. This paper briefly describes the history and current status of TTIM, explains the simulation of FPA sampling effects, presents validation results of the FPA sensor model, and demonstrates the utility of TTIM for investigating sampling effects in imagery.

  1. Thermoelectric properties of ZnSb films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Watko, E; Colpitts, T

    1997-07-01

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  2. In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Guseynov, R. R.; Tanriverdiyev, V. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede [Stony Brook, Stony Brook University (United States); Aliyeva, Ye. N.; Aliguliyeva, Kh. V.; Abdullayev, N. A., E-mail: abnadir@mail.ru; Mamedov, N. T. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

    2017-04-15

    Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.

  3. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

    Science.gov (United States)

    Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

    2017-07-01

    The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

  4. Antimony Redox Biotransformation in the Subsurface: Effect of Indigenous Sb(V) Respiring Microbiota.

    Science.gov (United States)

    Wang, Liying; Ye, Li; Yu, Yaqin; Jing, Chuanyong

    2018-02-06

    Anaerobic microbiological antimonate [Sb(V)] respiration is a newly discovered process regulating the Sb redox transformation in soils. However, little is known about the role microbiological Sb(V) respiration plays in the fate of Sb in the subsurface, especially in the presence of sulfate and electron shuttles. Herein, we successfully enriched a Sb(V) reducing microbiota (SbRM) from the subsurface near an active Sb mine. SbRM was dominated by genus Alkaliphilus (18-36%), Clostridiaceae (17-18%), Tissierella (24-27%), and Lysinibacillus (16-37%). The incubation results showed that SbRM reduced 88% of dissolved Sb(V) to Sb(III), but the total Sb mobility remained the same as in the abiotic control, indicating that SbRM alone did not increase the total Sb release but regulated the Sb speciation in the subsurface. Micro X-ray fluorescence (μ-XRF) analysis suggested the association of Sb and Fe, and electron shuttles such as anthraquinone-2,6-disulfonic disodium salt (AQDS) markedly enhanced the Sb release due to its ability to facilitate Fe mineral dissolution. Sb L-edge and S K-edge X-ray absorption near edge structure (XANES) results demonstrated that indigenous SbRM immobilized Sb via Sb 2 S 3 formation, especially in a sulfur-rich environment. The insights gained from this study shed new light on Sb mobilization and its risk assessment in the subsurface environment.

  5. Evaporation of tetramers in Sb4n clusters and conditions for the formation of Sb2n+1 clusters

    International Nuclear Information System (INIS)

    Rayane, D.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

    1989-01-01

    Antimony clusters are produced by the inert gas condensation technique. They are found to be built from Sb 4 units. The fragmentation by evaporation of Sb 4 units is studied as a function of the excess energy in the cluster. By this way the binding energy of the Sb 4 units in the cluster is found to be about 1.5 eV, well below the binding energy of a Sb atom in the bulk and in Sb 4 (≅3 eV). The evolution of ionization potentials of Sb 4n clusters confirms that their structure is probably non metallic. Finally the possible metastable character of this Sb 4n structure is discussed. (orig.)

  6. The design and application of a multi-band IR imager

    Science.gov (United States)

    Li, Lijuan

    2018-02-01

    Multi-band IR imaging system has many applications in security, national defense, petroleum and gas industry, etc. So the relevant technologies are getting more and more attention in rent years. As we know, when used in missile warning and missile seeker systems, multi-band IR imaging technology has the advantage of high target recognition capability and low false alarm rate if suitable spectral bands are selected. Compared with traditional single band IR imager, multi-band IR imager can make use of spectral features in addition to space and time domain features to discriminate target from background clutters and decoys. So, one of the key work is to select the right spectral bands in which the feature difference between target and false target is evident and is well utilized. Multi-band IR imager is a useful instrument to collect multi-band IR images of target, backgrounds and decoys for spectral band selection study at low cost and with adjustable parameters and property compared with commercial imaging spectrometer. In this paper, a multi-band IR imaging system is developed which is suitable to collect 4 spectral band images of various scenes at every turn and can be expanded to other short-wave and mid-wave IR spectral bands combination by changing filter groups. The multi-band IR imaging system consists of a broad band optical system, a cryogenic InSb large array detector, a spinning filter wheel and electronic processing system. The multi-band IR imaging system's performance is tested in real data collection experiments.

  7. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Energy Technology Data Exchange (ETDEWEB)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

    2016-12-15

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  8. Synthesis and thermoelectric properties of Sb{sub 0.20}CoSb{sub 2.80} skutterudite

    Energy Technology Data Exchange (ETDEWEB)

    Figueirêdo, C.A., E-mail: camila_fig@hotmail.com [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Gallas, M.R. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Institute for Multiscale Simulations, Friedrich-Alexander-Universität, Nägelsbachstrasse 49b, 91052 Erlangen (Germany); Zorzi, J.E. [Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil); Perottoni, C.A. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil)

    2014-06-15

    Highlights: • A HP-HT Sb{sub 0.20}CoSb{sub 2.80} phase was prepared by processing cobalt antimonide at 7.7 GPa and 550 °C, for (at least) 5 min. • The mechanism of formation of this phase involves (i) decomposition of cobalt antimonide into CoSb{sub 2} and Sb, and (ii) insertion of Sb into the remaining cobalt antimonide. • The mechanism of formation is qualitatively different from that responsible for the formation of the high pressure (greater than 20 GPa) phase. - Abstract: Polycrystalline samples of cobalt antimonide (CoSb{sub 2.79}) were submitted to different conditions of pressure, temperature and processing time, in a high-pressure toroidal-type chamber, aiming to maximize the production of the high pressure phase previously observed in experiments with a diamond anvil cell. Rietveld refinements of X-ray powder diffraction data were performed to determine the phase composition and structural parameters. The maximum yield, 89(2) wt.% of Sb{sub x}CoSb{sub 3−x} phase, was obtained at 7.7 GPa, 550 °C and (at least) 5 min of processing time. The mechanism behind the formation of Sb{sub x}CoSb{sub 3−x} at high pressure and high temperature is actually not the same as that previously inferred from experiments at higher pressures (20 GPa) and room temperature with the diamond anvil cell. Indeed, evidences suggest that, at high pressure and high temperature, Sb{sub x}CoSb{sub 3−x} is formed by insertion of Sb resulting from decomposition of cobalt antimonide. Thermal conductivity, Seebeck coefficient and electrical conductivity were estimated for CoSb{sub 2.79} and Sb{sub 0.20}CoSb{sub 2.80}. The thermoelectric figure of merit at room temperature for Sb{sub 0.20}CoSb{sub 2.80} resulted 33% greater than that for CoSb{sub 2.79}.

  9. The characterization of Co xZn7-xSb2O12 spinel obtained by the pechini method

    Directory of Open Access Journals (Sweden)

    Deiby Santos Gouveia

    2005-06-01

    Full Text Available Oxides with spinel structures have been studied for many decades as they have been used in a variety of applications like pigments and refractories. They have also been used as a model structure to evaluate the relative stability of ions in octahedral and tetrahedral sites. Zinc- antimony spinels (Zn7Sb2O12 were synthesized by the Pechini method and the cation Zn2+ was substituted by Co2+, taking into consideration the stoichiometry of Co xZn7-xSb2O12 (x = 0 - 7. Characterization of the thermal properties of pyrolyzed powders was carried out with a TG/DTA analyzer, and mass losses were determined as a function of the cobalt content in the resin. The powders were calcined at temperatures in the range 600 to 1000 °C and characterized by XRD, BET and IR spectroscopy. Maximum cristalinity was obtained in powders calcined at 1000 °C. Materials with x = 5 - 7 revealed the presence of a secondary phase (Co, ZnSb2O6. Infrared analysis facilitated in the determination of the possible sites of Zn2+, Co2+ and Sb2+ ions in the lattice.

  10. Microbiological reduction of Sb(V) in anoxic freshwater sediments

    Science.gov (United States)

    Oremland, Ronald S.; Kulp, Thomas R.; Miller, Laurence G.; Braiotta, Franco; Webb, Samuel M.; Kocar, Benjamin D; Blum, Jodi S.

    2014-01-01

    Microbiological reduction of millimolar concentrations of Sb(V) to Sb(III) was observed in anoxic sediments from two freshwater settings: (1) a Sb- and As-contaminated mine site (Stibnite Mine) in central Idaho and 2) an uncontaminated suburban lake (Searsville Lake) in the San Francisco Bay Area. Rates of Sb(V) reduction in anoxic sediment microcosms and enrichment cultures were enhanced by amendment with lactate or acetate as electron donors but not by H2, and no reduction occurred in sterilized controls. Addition of 2-14C-acetate to Stibnite Mine microcosms resulted in the production of 14CO2 coupled to Sb(V) reduction, suggesting that this process proceeds by a dissimilatory respiratory pathway in those sediments. Antimony(V) reduction in Searsville Lake sediments was not coupled to acetate mineralization and may be associated with Sb-resistance. The microcosms and enrichment cultures also reduced sulfate, and the precipitation of insoluble Sb(III)-sulfide complexes was a major sink for reduced Sb. The reduction of Sb(V) by Stibnite Mine sediments was inhibited by As(V), suggesting that As(V) is a preferred electron acceptor for the indigenous community. These findings indicate a novel pathway for anaerobic microbiological respiration and suggest that communities capable of reducing high concentrations of Sb(V) commonly occur naturally in the environment.

  11. DWPF Simulant CPC Studies For SB8

    Energy Technology Data Exchange (ETDEWEB)

    Newell, J. D.

    2013-09-25

    Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected

  12. CCD and IR array controllers

    Science.gov (United States)

    Leach, Robert W.; Low, Frank J.

    2000-08-01

    A family of controllers has bene developed that is powerful and flexible enough to operate a wide range of CCD and IR focal plane arrays in a variety of ground-based applications. These include fast readout of small CCD and IR arrays for adaptive optics applications, slow readout of large CCD and IR mosaics, and single CCD and IR array operation at low background/low noise regimes as well as high background/high speed regimes. The CCD and IR controllers have a common digital core based on user- programmable digital signal processors that are used to generate the array clocking and signal processing signals customized for each application. A fiber optic link passes image data and commands to VME or PCI interface boards resident in a host computer to the controller. CCD signal processing is done with a dual slope integrator operating at speeds of up to one Megapixel per second per channel. Signal processing of IR arrays is done either with a dual channel video processor or a four channel video processor that has built-in image memory and a coadder to 32-bit precision for operating high background arrays. Recent developments underway include the implementation of a fast fiber optic data link operating at a speed of 12.5 Megapixels per second for fast image transfer from the controller to the host computer, and supporting image acquisition software and device drivers for the PCI interface board for the Sun Solaris, Linux and Windows 2000 operating systems.

  13. Sb{sup III} - Sb{sup V} Exchange Reaction in Hydrochloric: Acid Solutions; Echange Sb{sup III}-Sb{sup V} dans des Solutions d'Acide Chlorhydrique; Reaktsiya obmena Sb(III) - Sb(V) v rastvorakh khloristovodorodnoj kisloty; Intercambio Sb{sup III}-Sb{sup V} en Soluciones de HCl

    Energy Technology Data Exchange (ETDEWEB)

    Kambara, T.; Yamaguchi, K.; Yasuba, S. [Shizuoka University, Shizuoka City (Japan)

    1965-10-15

    The exchange reaction of Sb{sup III} - Sb{sup V} in solutions of low HCl concentrations was studied using {sup 124}Sb as a tracer. The effects of HCl concentrations and chemical forms of antimony on the exchange rate were investigated. The HCl concentrations of the antimony solutions ((Sb{sup III}) =(Sb{sup V}) = 6.8 x 10{sup -4}M) were changed from 0.8 to 4.0M and the half-time for the exchange was measured by plotting log (1 - F) versus time t to calculate the exchange rate assuming the second-ordet reaction. It was found that the exchange rate was sharply increased with the increase of HCl concentrations (at 25 Degree-Sign C, from 0.8 to 2.0M) and at 2.0M HCl concentration the rate reached the maximum, from which the rate was decreased with the increase of HCl concentrations (at 25 Degree-Sign C, from 2.0 to 4.0M). Two sorts of Sb{sup V} species were used for our investigations, i.e. one was used directly after the dilution of 10M HCl Sb{sup V} solution with water and the other was used after 24 hours standing at room temperature from the dilution. (The Sb{sup III} species were also kept standing after preparation from 10M HCl Sb{sup III} solution.) In both cases the maximum rates were found to exist at 2.0M HCl concentration. The rate R{sub 1} for the former (directly after dilution) was 4.5 x 10{sup -6} mole litre{sup -1} min{sup -1} and the rate R{sub 2} for the latter (24 hours standing) was 1.2 x 10{sup -}{sub 6} mole litre. Also the activation energy for these cases was found to be 12.2 kcal/mole and 19.1 kcal/mole. By spectrophotometric studies, the Sb{sup V} species of the former type were found to be mainly consisting of SbCl{sup -}{sub 6} and the species of the latter type to be of SbCl{sub 4}(OH){sup -}{sub 2}, etc. Besides these facts the form of Sb{sup III} species was found to have no influence on the exchange rate. A much sharper increase of the exchange rate was observed when the HCl concentration of the antimony solution was fixed at 0.8M and

  14. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  15. Electronic structure and high pressure phase transition in LaSb and CeSb

    International Nuclear Information System (INIS)

    Mathi Jaya, S.; Sanyal, S.P.

    1992-09-01

    The electronic structure and high pressure structural phase transition in cerium and lanthanum antimonides have been investigated using the tight binding LMTO method. The calculation of total energy reveals that the simple tetragonal structure is found to be stable at high pressures for both the compounds. In the case of LaSb, the calculated value of the equilibrium cell volume and the cell volume at which phase transition occurs are found to have a fairly good agreement with the experimental results. However, in the case of CeSb, the agreement is not as good as in LaSb. We also predicted the most favoured c/a value in the high pressure phase (simple tetragonal) for these compounds. Further we present the calculated results on the electronic structure of these systems at the equilibrium as well as at the reduced cell volumes. (author). 8 refs, 11 figs, 1 tab

  16. (In)GaSb/AlGaSb quantum wells grown on Si substrates

    International Nuclear Information System (INIS)

    Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

    2007-01-01

    We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schroedinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (∼ 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected

  17. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    International Nuclear Information System (INIS)

    Wagener, Viera; Olivier, E.J.; Botha, J.R.

    2009-01-01

    This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  18. Electrodeposition and electrochemical characterisation of thick and thin coatings of Sb and Sb/Sb2O3 particles for Li-ion battery anodes

    International Nuclear Information System (INIS)

    Bryngelsson, Hanna; Eskhult, Jonas; Edstroem, Kristina; Nyholm, Leif

    2007-01-01

    The possibilities to electrodeposit thick coatings composed of nanoparticles of Sb and Sb 2 O 3 for use as high-capacity anode materials in Li-ion batteries have been investigated. It is demonstrated that the stability of the coatings depends on their Sb 2 O 3 concentrations as well as microstructure. The electrodeposition reactions in electrolytes with different pH and buffer capacities were studied using chronopotentiometry and electrochemical quartz crystal microbalance measurements. The obtained deposits, which were characterised with XRD and SEM, were also tested as anode materials in Li-ion batteries. The influence of the pH and buffer capacity of the deposition solution on the composition and particle size of the deposits were studied and it is concluded that depositions from a poorly buffered solution of antimony-tartrate give rise to good anode materials due to the inclusion of precipitated Sb 2 O 3 nanoparticles in the Sb coatings. Depositions under conditions yielding pure Sb coatings give rise to deposits composed of large crystalline particles with poor anode stabilities. The presence of a plateau at about 0.8 V versus Li + /Li due to SEI forming reactions and the origin of another plateau at about 0.4 V versus Li + /Li seen during the lithiation of thin Sb coatings are also discussed. It is demonstrated that the 0.4 V plateau is present for Sb coatings for which the (0 1 2) peak is the main peak in the XRD diffractogram

  19. Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

    International Nuclear Information System (INIS)

    Aliev, Z.S.; Musaeva, S.S.; Babanly, D.M.; Shevelkov, A.V.; Babanly, M.B.

    2010-01-01

    The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb 2 Se 3 -SbI 3 , Sb-SbSeI, SbI 3 -Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony (ΔG-bar, ΔH-bar, ΔS-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: ΔG f,298 0 =-80.12±1.81kJ/mol; ΔH f,298 0 =-77.3±1.8kJ/mol; S 298 0 =155.2±9.5J/(molK).

  20. Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, Z S; Musaeva, S S; Babanly, D M [Baku State University, General and Inorganic Chemistry Department (Azerbaijan); Shevelkov, A.V., E-mail: shev@inorg.chem.msu.r [Moscow Lomonosov State University, Chemistry Department (Russian Federation); Babanly, M.B., E-mail: Babanly_mb@rambler.r [Baku State University, General and Inorganic Chemistry Department (Azerbaijan)

    2010-09-03

    The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb{sub 2}Se{sub 3}-SbI{sub 3}, Sb-SbSeI, SbI{sub 3}-Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony ({Delta}G-bar, {Delta}H-bar, {Delta}S-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: {Delta}G{sub f,298}{sup 0}=-80.12{+-}1.81kJ/mol; {Delta}H{sub f,298}{sup 0}=-77.3{+-}1.8kJ/mol; S{sub 298}{sup 0}=155.2{+-}9.5J/(molK).

  1. Removal of Sb(III and Sb(V by Ferric Chloride Coagulation: Implications of Fe Solubility

    Directory of Open Access Journals (Sweden)

    Muhammad Ali Inam

    2018-04-01

    Full Text Available Coagulation and precipitation appear to be the most efficient and economical methods for the removal of antimony from aqueous solution. In this study, antimony removal from synthetic water and Fe solubility with ferric chloride (FC coagulation has been investigated. The effects of pH, FC dosage, initial antimony loading and mixed Sb(III, Sb(V proportions on Fe solubility and antimony removal were studied. The results showed that the Sb(III removal efficiency increased with the increase of solution pH particularly due to an increase in Fe precipitation. The Sb(V removal was influenced by the solution pH due to a change in Fe solubility. However, the Fe solubility was only impaired by the Sb(III species at optimum pH 7. The removal efficiencies of both Sb species were enhanced with an increase in FC dose. The quantitative analysis of the isotherm study revealed the strong adsorption potential of Sb(III on Fe precipitates as compared to Sb(V. Furthermore, the removal behavior of antimony was inhibited in mixed proportion with high Sb(V fraction. In conclusion, this study contributes to better understanding the fate of Sb species, their mobilities, and comparative removal behavior, with implications for Fe solubility using ferric chloride in different aqueous environments.

  2. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Science.gov (United States)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

    2016-12-01

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  3. Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Carrington, Peter James, E-mail: p.carrington@lancaster.ac.uk [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Mahajumi, Abu Syed [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Wagener, Magnus C.; Botha, Johannes Reinhardt [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Zhuang Qian; Krier, Anthony [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2012-05-15

    We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented.

  4. Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    International Nuclear Information System (INIS)

    Carrington, Peter James; Mahajumi, Abu Syed; Wagener, Magnus C.; Botha, Johannes Reinhardt; Zhuang Qian; Krier, Anthony

    2012-01-01

    We report on the fabrication of GaAs based p–i–n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented.

  5. Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

    Science.gov (United States)

    Christol, P.; Rodriguez, J.-B.

    2017-11-01

    Infrared photodetectors based on type-II InAs/GaSb superlattice (T2SL) material has been given a lot of attention this past decade, in particular by U.S. laboratories. Among the advantages of this material system, one can cite the possibility to span a large Infrared (IR) range (3μm to 30 μm) by tailoring the band-gap independently from the lattice constant, allowing addressing many applications by the same fabrication process and the realization of multi-color IR sensors for high performance imaging systems. Recently, the maturity of the growth of the quantum structure by molecular beam epitaxy (MBE) and progress on the processing resulted in the demonstration of high-performance mega-pixel focal plane arrays (FPA) in both the mid-wavelength (MWIR) and the long-wavelength (LWIR) infrared spectral bands [1]. Consequently, InAs/GaSb T2SL photodetector can be now considered as a new infrared technology which can be complementary to InSb, MCT or QWIPs technologies. After some reminders on InAs/GaSb T2SL quantum structure properties, we present in this communication the results obtained by the IES laboratory, from Montpellier University, France, for photodiodes operating in the MWIR spectral domains. We then complete the paper by the main results reached by others laboratories for T2SL detectors operating from MWIR to VLWIR spectral ranges.

  6. The system Sb2Te3-InS

    International Nuclear Information System (INIS)

    Safarov, M.G.; Gamidov, R.S.; Poladov, P.M.

    1991-01-01

    The system Sb 2 Te 3 -InS was investigated by the methods of physicochemical analysis. Its state diagram was constructed. It represents the stable diagonal of the mutual ternary system InTe-Sb 2 Te 3 -Sb 2 S 3 -InS. It was established that limited regions of α- and β-solid solutions on the basis of Sb 2 Te 3 and InS, achieving 15.5 and 8 mol.% respectively, formed in the system. Lattice periods of α- and β-solid solutions, their lattice volumes, number of atoms in them and densities were calculated

  7. Optical response of confined excitons in GaInAsSb/GaSb Quantum Dots heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Cano, R [Departamento de Fisica, Universidad Autonoma de Occidente, A.A. 2790, Cali (Colombia); Tirado-Mejia, L; Fonthal, G; Ariza-Calderon, H [Laboratorio de Optoelectronica, Universidad del Quindio, A.A. 4603 Armenia (Colombia); Porras-Montenegro, N, E-mail: rsanchez40@gmail.co [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia)

    2009-05-01

    The narrow-gap Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. In these compounds grown by liquid phase epitaxy over GaSb single crystals, for x and y values in the range of 0.10 to 0.14 for both variables, the photoluminescence optical response at 12K is blue-shifted by 20 meV related to the photoreflectance response. We believe this behavior is due to possible higher electronic confinement in some places of the heterostructure, possibly formed in the interface during the growth process. In order to explain this behavior, in this work we study the exciton recombination energy in spherical Quantum Dots (QDs) on Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, using the variational procedure within the effective-mass approximation and considering an electron in a Type I band alignment formed by two semiconductors with similar parabolic conduction bands. Our results are in good agreement with recent experimental results.

  8. Impaired Insulin Signaling is Associated with Hepatic Mitochondrial Dysfunction in IR+/−-IRS-1+/− Double Heterozygous (IR-IRS1dh Mice

    Directory of Open Access Journals (Sweden)

    Andras Franko

    2017-05-01

    Full Text Available Mitochondria play a pivotal role in energy metabolism, but whether insulin signaling per se could regulate mitochondrial function has not been identified yet. To investigate whether mitochondrial function is regulated by insulin signaling, we analyzed muscle and liver of insulin receptor (IR+/−-insulin receptor substrate-1 (IRS-1+/− double heterozygous (IR-IRS1dh mice, a well described model for insulin resistance. IR-IRS1dh mice were studied at the age of 6 and 12 months and glucose metabolism was determined by glucose and insulin tolerance tests. Mitochondrial enzyme activities, oxygen consumption, and membrane potential were assessed using spectrophotometric, respirometric, and proton motive force analysis, respectively. IR-IRS1dh mice showed elevated serum insulin levels. Hepatic mitochondrial oxygen consumption was reduced in IR-IRS1dh animals at 12 months of age. Furthermore, 6-month-old IR-IRS1dh mice demonstrated enhanced mitochondrial respiration in skeletal muscle, but a tendency of impaired glucose tolerance. On the other hand, 12-month-old IR-IRS1dh mice showed improved glucose tolerance, but normal muscle mitochondrial function. Our data revealed that deficiency in IR/IRS-1 resulted in normal or even elevated skeletal muscle, but impaired hepatic mitochondrial function, suggesting a direct cross-talk between insulin signaling and mitochondria in the liver.

  9. Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

    International Nuclear Information System (INIS)

    Jeong, Jeung-hyun; Lee, Hyun Seok; Lee, Suyoun; Lee, Taek Sung; Kim, Won Mok; Wu Zhe; Cheong, Byung-ki; Kim, Seul Cham; Oh, Kyu Hwan

    2009-01-01

    A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase (SET) and vice versa (RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te (4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te (2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 10 3 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te (2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition (Sb : Te ∼2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it.

  10. Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

    Science.gov (United States)

    Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.

    2018-05-01

    We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

  11. Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition

    Science.gov (United States)

    Luo, Caiqin; Ho, Lok-Ping; Azad, Fahad; Anwand, Wolfgang; Butterling, Maik; Wagner, Andreas; Kuznetsov, Andrej; Zhu, Hai; Su, Shichen; Ling, Francis Chi-Chung

    2018-04-01

    Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ˜8 × 1020 cm-3, the as-grown films grown with an appropriate oxygen pressure could be n˜4 × 1020 cm-3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples.

  12. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

  13. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

  14. W/FeSb2/W Heterostructure for Single-Photon Detection in a Wide Range of Electromagnetic Spectrum

    Directory of Open Access Journals (Sweden)

    Armen KUZANYAN

    2017-11-01

    Full Text Available The results of computer simulation of heat distribution processes taking place after the absorption of single photons of 1 – 1000 eV energy in the three- layer detection pixel of the thermoelectric detector are being analyzed. Different geometries of the detection pixel with thermoelectric sensor made of strongly correlated semiconductor FeSb2, tungsten absorber and heat sink are considered. It is concluded that such detector may register individual photons from IR to X-ray providing energy resolution of not less than 1 % and terahertz counting rate.

  15. Preparation and crystal structure of Ca4Sb2O

    International Nuclear Information System (INIS)

    Eisenmann, B.; Limartha, H.; Schaefer, H.

    1980-01-01

    The formerly described compound Ca 2 Sb is to be corrected to Ca 4 Sb 2 O as shown by X-ray diffractometer data of single crystals and neutron diffraction diagrams of powders. The compound crystallizes in the K 2 NiF 4 structure type. (orig.)

  16. Broadly tunable picosecond ir source

    International Nuclear Information System (INIS)

    Campillo, A.J.; Hyer, R.C.; Shapiro, S.L.

    1979-01-01

    A completely grating tuned (1.9 to 2.4 μm) picosecond traveling wave IR generator capable of controlled spectral bandwidth operation down to the Fourier Transform limit is reported. Subsequent down conversion in CdSe extends tuning to 10 to 20 μm

  17. Neutron scattering study of Ce3Au3Sb4

    International Nuclear Information System (INIS)

    Kasaya, Mitsuo; Katoh, Kenichi; Kohgi, Masahumi; Osakabe, Toyotaka

    1993-01-01

    Rare-earth compounds with an Y 3 Au 3 Sb 4 -type crystal structure are semiconductors or semi-metals. Among them, Ce 3 Au 3 Sb 4 is a semiconductor with an activation energy of about 640 K and shows no magnetic order down to 1.5 K. The magnetic part of the specific heat for Ce 3 Au 3 Sb 4 obtained by subtracting the value for La 3 Au 3 Sb 4 from the total specific heat of Ce 3 Au 3 Sb 4 shows a broad peak at around 10 K, the origin of which is well explained by the crystalline-field splitting determined by neutron scattering. (author)

  18. Are Sb4n (n>1) clusters weakly interacting tetrahedra?

    International Nuclear Information System (INIS)

    Kumar, V.

    1993-03-01

    The electronic and atomic structure of Sb 4 and Sb 8 clusters is studied using the ab-initio molecular dynamics method in the local density approximation. While for Sb 4 we obtain a regular tetrahedron to be about 2.0 eV lower in energy than a bent rhombus, for Sb 8 two structures, (1) two weakly interaction tetrahedra and (2) a bent rhombus interacting with a stretched tetrahedron, obtained from the simulated annealing lie only within about 0.1 eV indicating the importance of the bent rhombus structure for larger clusters. As compared to two isolated tetrahedra, the binding energy of Sb 8 is about 0.5 eV. Our results are thus in excellent agreement with the experimental data which show predominantly the abundance of tetramers above room temperature. (author). 18 refs, 5 figs, 1 tab

  19. Thermoelectric properties and microstructure of Mg3Sb2

    International Nuclear Information System (INIS)

    Condron, Cathie L.; Kauzlarich, Susan M.; Gascoin, Franck; Snyder, G. Jeffrey

    2006-01-01

    Mg 3 Sb 2 has been prepared by direct reaction of the elements. Powder X-ray diffraction, thermal gravimetric, differential scanning calorimetery, and microprobe data were obtained on hot pressed samples. Single phase samples of Mg 3 Sb 2 were prepared and found to contain oxygen at the grain boundaries and to lose Mg and oxidize at temperatures above 900 K. Thermoelectric properties were characterized by Seebeck, electrical resistivity, and thermal conductivity measurements from 300 to 1023 K, and the maximum zT was found to be 0.21 at ∼875 K. - Graphical abstract: Dimensionless figure of merit for Mg 3 Sb 2 hot pressed and sintered at 873 K. The inset illustrates the crystal structure of Mg 3 Sb 2 along the [100] direction (white=Mg, black=Sb)

  20. A Summary of Rheology Data For SB3 and SB2/3 Blend Simulant Savannah River Site Wastes

    International Nuclear Information System (INIS)

    KOOPMAN, DAVIDC.

    2004-01-01

    The purpose of this study was to document the rheological measurements made for Sludge Batch 3 (SB3) and the blend of SB3 with Sludge Batch 2 (SB2). These measurements were primarily made on Slurry Mix Evaporator (SME) products, i.e. melter feeds. Some measurements were made on SB2/3 blend Sludge Receipt and Adjustment Tank (SRAT) products. Measurements on radioactive SB3 and SB2/3 samples have been limited to sludge characterization. SB2/3 measurements studied the impact of changing the SRAT acid addition strategy on the SRAT and SME product rheology. SB2/3 measurements also studied the impact of changing the waste loading target (sludge oxides content in glass) of the SME product. SB3 measurements studied the impact of changes in the wash end point and acid addition strategy on the SME product (melter feed) rheology. A summary of the significant findings is given below: SB3 radioactive sludge and blended SB2/3 radioactive sludge were less viscous than SB2 radioactive sludge. SB2/3 b lend sludge is more viscous than SB3 sludge. SB3 simulant SME product rheology was strongly impacted by changing the noble metal concentrations to more closely match those of the qualification sample. This reduction in noble metals produced a lower pH product that was also considerably less viscous. Increased acid addition in the SB2/3 SRAT generally led to less viscous simulant SRAT products. This trend did not persist in the SME products. SME products became more viscous when increased acid was used in the SRAT cycle from 135 per cent up to 170 per cent of stoichiometry, then became less viscous as total acid was increased further to 185 per cent. A significant increase in hydrogen generation occurred between 170 per cent and 185 per cent. The impact of acid addition on SB3 SME products was also variable. The impact of waste loading changes from 31 to 35 to 40 per cent on SB2/3 simulant SME products led to more viscous melter feeds as waste loading increased at constant wt. per cent

  1. Alkoholio ir tabako pasiūlos ir paklausos teisinio reguliavimo raida Lietuvos Respublikoje: problemos ir sprendimai

    OpenAIRE

    Mockevičius, Arminas

    2014-01-01

    Viešosios teisės magistro studijų programos studento Armino Mockevičiaus buvo parašytas magistro baigiamasis darbas „Alkoholio ir tabako pasiūlos ir paklausos teisinio reguliavimo raida Lietuvos Respublikoje: problemos ir sprendimai“. Šis darbas parašytas Vilniuje, 2014 metais, Mykolo Romerio universiteto Teisės fakulteto Konstitucinės ir administracinės teisės institute, vadovaujant dr. Gintautui Vilkeliui, apimtis 98 p. Darbo tikslas yra atskleisti alkoholio ir tabako pasiūlos ir paklau...

  2. Adducts of UF5 with SbF5 and structure of UF5 . 2SbF5

    International Nuclear Information System (INIS)

    Sawodny, W.; Rediess, K.

    1980-01-01

    Both α-UF 5 and β-UF 5 form only a 1:2 compound UF 5 . 2SbF 5 reacting directly with SbF 5 , from which UF 5 . SbF 5 can be obtained by thermal decomposition. UF 5 . 2SbF 5 crystallizes in the monoclinic space group P2 1 /c with the following lattice constants a = 8.110(4), b = 14.129(6), c = 10.032(6) A and β = 96.97(5) 0 ; Z = 4. An X-ray study shows centrosymmetric four-membered rings of alternating UF 8 and SbF 6 polyhedra connected by other SbF 6 entities. This structure is similar to that of UOF 5 . 2SbF 5 , but the distorted pentagonal-bipyramidal coordination of the U atom found there is increased to a dodecahedral coordination by an additional U-F-Sb bridge, though with a somewaht larger UF distance. (author)

  3. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah Mohammed Abdullah; Singh, Nirpendra; Schwingenschlö gl, Udo

    2017-01-01

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling

  4. Photoemission study of the skutterudite compounds CoSb sub 3 and RhSb sub 3

    CERN Document Server

    Ishii, H; Fujimori, A; Nagamoto, Y; Koyanagi, T; Sofo, J O

    2002-01-01

    We have studied the electronic structure of the skutterudite compounds CoSb sub 3 and Co(Sb sub 0 sub . sub 9 sub 6 Te sub 0 sub . sub 0 sub 4) sub 3 by photoemission spectroscopy. Valence-band spectra revealed that a significant amount Sb 5p states are present near the Fermi level and are hybridized with Co 3d states just below it. The spectra are well reproduced by the band-structure calculation, suggesting that the effect of electron correlations is not important. When Te is substituted for Sb and n-type carriers are doped into CoSb sub 3 , the spectra are shifted to higher binding energies as described by the rigid-band model. From this shift and the free-electron model for the conduction and valence bands, we have estimated the band gap of CoSb sub 3 to be 0.03-0.04 eV, consistent with transport measurements. Photoemission spectra of RhSb sub 3 have also been measured and revealed expected similarities to and differences from those of CoSb sub 3. Unusual temperature dependence has been observed for the s...

  5. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays

    DEFF Research Database (Denmark)

    Ren, Dingding; Dheeraj, Dasa L.; Jin, Chengjun

    2016-01-01

    and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses...

  6. Multi-wavelength mid-IR light source for gas sensing

    Science.gov (United States)

    Karioja, Pentti; Alajoki, Teemu; Cherchi, Matteo; Ollila, Jyrki; Harjanne, Mikko; Heinilehto, Noora; Suomalainen, Soile; Viheriälä, Jukka; Zia, Nouman; Guina, Mircea; Buczyński, Ryszard; Kasztelanic, Rafał; Kujawa, Ireneusz; Salo, Tomi; Virtanen, Sami; Kluczyński, Paweł; Sagberg, Hâkon; Ratajczyk, Marcin; Kalinowski, Przemyslaw

    2017-02-01

    Cost effective multi-wavelength light sources are key enablers for wide-scale penetration of gas sensors at Mid-IR wavelength range. Utilizing novel Mid-IR Si-based photonic integrated circuits (PICs) filter and wide-band Mid-IR Super Luminescent Light Emitting Diodes (SLEDs), we show the concept of a light source that covers 2.5…3.5 μm wavelength range with a resolution of price can be lowered in high volumes by utilizing tailored molded IR lens technology and automated packaging and assembling technologies. The status of the development of the key components of the light source are reported. The PIC is based on the use of micron-scale SOI technology, SLED is based on AlGaInAsSb materials and the lenses are tailored heavy metal oxide glasses fabricated by the use of hot-embossing. The packaging concept utilizing automated assembly tools is depicted. In safety and security applications, the Mid-IR wavelength range covered by the novel light source allows for detecting several harmful gas components with a single sensor. At the moment, affordable sources are not available. The market impact is expected to be disruptive, since the devices currently in the market are either complicated, expensive and heavy instruments, or the applied measurement principles are inadequate in terms of stability and selectivity.

  7. Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector

    International Nuclear Information System (INIS)

    Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G.

    2013-01-01

    Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

  8. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

    2014-10-14

    The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

  9. Oferta ir akceptas vartojimo sutartyse

    OpenAIRE

    Ežerskytė, Ramunė

    2011-01-01

    Sutarčiai sudaryti paprastai reikia, kad viena šalis pasiūlytų sudaryti sutartį (oferta), o kita šalis sutiktų su pasiūlymu (akceptas). Sutarčių įvairovėje išskiriamos vartojimo sutartys, kurios dėl silpnesnės šalies apsaugos principo įgyvendinimo pasižymi tam tikrais ypatumais. Vartojimo sutarčių sudarymas pateikiant ofertą ir akceptą yra šio magistro baigiamojo darbo objektas. Magistro baigiamąjį darbą sudaro trys dalys. Pirmojoje darbo dalyje analizuojama vartojimo sutarties sąvoka ir spec...

  10. Study for material analogs of FeSb2: Material design for thermoelectric materials

    Science.gov (United States)

    Kang, Chang-Jong; Kotliar, Gabriel

    2018-03-01

    Using the ab initio evolutionary algorithm (implemented in uspex) and electronic structure calculations we investigate the properties of a new thermoelectric material FeSbAs, which is a material analog of the enigmatic thermoelectric FeSb2. We utilize the density functional theory and the Gutzwiller method to check the energetics. We find that FeSbAs can be made thermodynamically stable above ˜30 GPa. We investigate the electronic structure and thermoelectric properties of FeSbAs based on the density functional theory and compare with those of FeSb2. Above 50 K, FeSbAs has higher Seebeck coefficients than FeSb2. Upon doping, the figure of merit becomes larger for FeSbAs than for FeSb2. Another material analog FeSbP, was also investigated, and found thermodynamically unstable even at very high pressure. Regarding FeSb2 as a member of a family of compounds (FeSb2, FeSbAs, and FeSbP) we elucidate what are the chemical handles that control the gaps in this series. We also investigate solubility (As or P for Sb in FeSb2) we found As to be more soluble. Finally, we study a two-band model for thermoelectric properties and find that the temperature dependent chemical potential and the presence of the ionized impurities are important to explain the extremum in the Seebeck coefficient exhibited in experiments for FeSb2.

  11. Unusual crystallization behavior in Ga-Sb phase change alloys

    Directory of Open Access Journals (Sweden)

    Magali Putero

    2013-12-01

    Full Text Available Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate the crystallization behavior of Sb-rich Ga-Sb alloys. Measurements of the sheet resistance during heating indicated a reduced crystallization temperature with increased Sb content, which was confirmed by in situ X-ray diffraction. The electrical contrast increased with increasing Sb content and the resistivities in both the amorphous and crystalline phases decreased. It was found that by tuning the composition between Ga:Sb = 9:91 (in at.% and Ga:Sb = 45:55, the change in mass density upon crystallization changes from an increase in mass density which is typical for most phase change materials to a decrease in mass density. At the composition of Ga:Sb = 30:70, no mass density change is observed which should be very beneficial for phase change random access memory (PCRAM applications where a change in mass density during cycling is assumed to cause void formation and PCRAM device failure.

  12. Positron annihilation studies of high dose Sb implanted silicon

    International Nuclear Information System (INIS)

    Schut, H.; Eijt, S.W.H.; Beling, C.D.; Ho, K.; Takamura, Y.

    2005-01-01

    The formation and evolution of vacancies and precipitates created by implantation of 60 keV, 2 x 10 16 cm -2 Sb + in pre-amorphized (0 0 1) Cz-Si is studied using the Doppler broadening (DB) and two-dimensional angular correlation of annihilation radiation (2D-ACAR) positron beam techniques. After implantation, samples were laser annealed (LTA) and subsequently thermal annealed at temperatures ranging from 400 to 1000 deg. C. Implantation-induced vacancy-type defects were detected up to a depth of 280 nm. After LTA, positron annihilation related to both Sb and remaining defects is observed in the first 100 nm below the surface. The deeper region only shows positron trapping at vacancy-type defects with strong reduced concentration. Complete removal is obtained after 600 deg. C anneal. At this temperature, the positron data for the upper region reveals trapping at Sb and Si sites only. With increasing annealing time (at 600 deg. C) or increasing temperature (up to 1000 deg. C) positron annihilation at Sb-sites associated with neighboring vacancies becomes apparent. Results are correlated with the observed Sb electrical deactivation above 600 deg. C, the shift from small Sb aggregates to precipitates and out-diffusion of Sb from the implantation region at higher temperatures

  13. Climate Prediction Center IR 4km Dataset

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — CPC IR 4km dataset was created from all available individual geostationary satellite data which have been merged to form nearly seamless global (60N-60S) IR...

  14. A series of noncentrosymmetric antimony sulfides Ln{sub 8}Sb{sub 2}S{sub 15} (Ln = La, Pr, Nd) - syntheses, crystal and electronic structures, and NLO properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Hua-Jun [Laboratory of Applied Research on the Characteristic Resources in the North of Guizhou Province, School of Chemistry and Chemical Engineering, Zunyi Normal College, Guizhou (China); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou (China); Zhou, Liu-Jiang [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou (China)

    2015-02-15

    A series of noncentrosymmetric sulfides Ln{sub 8}Sb{sub 2}S{sub 15} (Ln = La, Pr, Nd) were prepared from stoichiometric mixtures of the elements at 1223 K in an evacuated silica tube. The compounds Ln{sub 8}Sb{sub 2}S{sub 15} with Ln = La and Nd are isostructural to Pr{sub 8}Sb{sub 2}S{sub 15} and crystallize in the tetragonal noncentrosymmetric space group I4{sub 1}cd. Their structure contains discrete [SbS{sub 3}]{sup 3-} trigonal pyramids separated by Ln{sup 3+} cations and S{sup 2-} anions. La{sub 8}Sb{sub 2}S{sub 15} shows second harmonic generation with intensities 1.2 times that of the commercially used IR NLO (nonlinear optics) material AgGaS{sub 2} (at 2.05 μm laser). It exhibits excellent thermal stability up to 663 C. Studies with UV/Vis-NIR diffuse reflectance spectroscopy show that La{sub 8}Sb{sub 2}S{sub 15} has an optical gap of around 2.3 eV, and a DFT study indicates a direct band gap with an electronic transfer excitation of S 3p electrons to a La 5d orbital. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Point defect balance in epitaxial GaSb

    International Nuclear Information System (INIS)

    Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-01-01

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  16. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-01

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

  17. First principles simulation of amorphous InSb

    Science.gov (United States)

    Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

    2013-05-01

    Ab initio molecular dynamics simulations based on density functional theory have been performed to generate a model of amorphous InSb by quenching from the melt. The resulting network is mostly tetrahedral with a minor fraction (10%) of atoms in a fivefold coordination. The structural properties are in good agreement with available x-ray diffraction and extended x-ray-absorption fine structure data and confirm the proposed presence of a sizable fraction of homopolar In-In and Sb-Sb bonds whose concentration in our model amounts to about 20% of the total number of bonds.

  18. Radioluminescence dating: the IR emission of feldspar

    International Nuclear Information System (INIS)

    Schilles, Thomas.; Habermann, Jan

    2000-01-01

    A new luminescence reader for radioluminescence (RL) measurements is presented. The system allows detection of RL emissions in the near infrared region (IR). Basic bleaching properties of the IR-RL emission of feldspars are investigated. Sunlight-bleaching experiments as a test for sensitivity changes are presented. IR-bleaching experiments were carried out to obtain information about the underlying physical processes of the IR-RL emission

  19. Formation Mechanism of Self Assembled Horizontal ErSb Nanowires Embedded in a GaSb(001) Matrix

    Science.gov (United States)

    Wilson, Nathaniel; Kraemer, Stephan; PalmstrøM, Chris

    The ErxGa1-xSb exhibits a variety of self-assembling nanostructures. In order to harness these nanostructures for use in devices and other material systems it is important to understand their formation. We have characterized the growth mechanism of self-assembled horizontal ErSb nanowires in a GaSb(001) matrix through the use of in-situ Scanning Tunneling Microscopy (STM) as well as ex-situ Transmission Electron Microscopy (TEM). We observe large GaSb macrosteps on the growth surface of Er.3Ga.7Sb samples. The areas near the ledge and base of the macrosteps show significant differences in size and distribution of ErSb nanowires. Results suggest that the formation of macrosteps drives the transition from vertical to horizontal nanowires in the ErxGa1-xSb system. We also observe a low temperature growth mode, which results in horizontal nanowire formation under a wide range of flux conditions. This new growth mode does not exhibit the embedded growth observed in the formation of nanowires at higher temperatures and may allow for horizontal nanowire formation without the presence of macrosteps, as well as the formation of smaller nanoparticles which may be useful for achieving smaller nanoparticle dimensions and electron confinement effects. This work was supported by NSF-DMR under 1507875.

  20. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    International Nuclear Information System (INIS)

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  1. Isolated Gramicidin Peptides Probed by IR Spectroscopy

    NARCIS (Netherlands)

    Rijs, A. M.; Kabelac, M.; Abo-Riziq, A.; Hobza, P.; de Vries, M. S.

    2011-01-01

    We report double-resonant IR/UV ion-dip spectroscopy of neutral gramicidin peptides in the gas phase. The IR spectra of gramicidin A and C, recorded in both the 1000 cm(-1) to 1800 cm(-1) and the 2700 to 3750 cm(-1) region, allow structural analysis. By studying this broad IR range, various local

  2. Chemical consequences of the neutron irradiation of ionic antimony oxides and Fe Sb2O4

    Energy Technology Data Exchange (ETDEWEB)

    Facetti, J F [Asuncion Nacional Univ. (Paraguay). Inst. de Ciencias

    1970-01-01

    The chemical consequences fo the neutron irradiation of ionic antimony oxides and Fe Sb2O4 are studied. The nature of the Sb-O2 bond effects the yield of SbV the higher the yield the more covalent the bond. In addition, the Fe Sb2O4 obeys the Maddock's rule.

  3. Oxidation of 1-butene over uranium oxide (UO3)-antimony oxide (Sb2O3) catalysts

    NARCIS (Netherlands)

    Simons, T.; Houtman, P.N.; Schuit, G.C.A.

    1971-01-01

    The oxidative dehydrogenation of butene to butadiene over U-Sb catalysts was investigated. The presence of two compds., (UO2)Sb3O7 and Sb3U3O14, reported by Grasselli and Callahan (1969), was confirmed with (UO2)Sb3O7 being the actual catalyst. The reaction is first order in butene and zero order in

  4. Increasing the thermoelectric power factor of Ge17Sb2Te20 by adjusting the Ge/Sb ratio

    Science.gov (United States)

    Williams, Jared B.; Mather, Spencer P.; Page, Alexander; Uher, Ctirad; Morelli, Donald T.

    2017-07-01

    We have investigated the thermoelectric properties of Ge17Sb2Te20. This compound is a known phase change material with electronic properties that depend strongly on temperature. The thermoelectric properties of this compound can be tuned by altering the stoichiometry of Ge and Sb without the use of additional foreign elements during synthesis. This tuning results in a 26% increase in the thermoelectric power factor at 723 K. Based on a single parabolic band model we show that the pristine material is optimally doped, and thus, a reduction in the lattice thermal conductivity of pure Ge17Sb2Te20 should result in an enhanced thermoelectric figure of merit.

  5. Study of conformational changes and protein aggregation of bovine serum albumin in presence of Sb(III) and Sb(V).

    Science.gov (United States)

    Verdugo, Marcelo; Ruiz Encinar, Jorge; Costa-Fernández, José Manuel; Menendez-Miranda, Mario; Bouzas-Ramos, Diego; Bravo, Manuel; Quiroz, Waldo

    2017-01-01

    Antimony is a metalloid that affects biological functions in humans due to a mechanism still not understood. There is no doubt that the toxicity and physicochemical properties of Sb are strongly related with its chemical state. In this paper, the interaction between Sb(III) and Sb(V) with bovine serum albumin (BSA) was investigated in vitro by fluorescence spectroscopy, and circular dichroism (CD) under simulated physiological conditions. Moreover, the coupling of the separation technique, asymmetric flow field-flow fractionation, with elemental mass spectrometry to understand the interaction of Sb(V) and Sb(III) with the BSA was also used. Our results showed a different behaviour of Sb(III) vs. Sb(V) regarding their effects on the interaction with the BSA. The effects in terms of protein aggregates and conformational changes were higher in the presence of Sb(III) compared to Sb(V) which may explain the differences in toxicity between both Sb species in vivo. Obtained results demonstrated the protective effect of GSH that modifies the degree of interaction between the Sb species with BSA. Interestingly, in our experiments it was possible to detect an interaction between BSA and Sb species, which may be related with the presence of labile complex between the Sb and a protein for the first time.

  6. Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

    2017-04-15

    Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

  7. Phase transformation in Mg—Sb3Te thin films

    International Nuclear Information System (INIS)

    Li Jun-Jian; Chen Yi-Min; Nie Qiu-Hua; Lü Ye-Gang; Wang Guo-Xiang; Shen Xiang; Dai Shi-Xun; Xu Tie-Feng

    2014-01-01

    Mg-doped Sb 3 Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb 3 Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb 3 Te. Especially Mg 25.19 (Sb 3 Te)74.81 shows higher T c (∼ 190 °C) and larger E a (∼ 3.49 eV), which results in a better data retention maintaining for 10 yr at ∼ 112 °C. Moreover R a /R c value is also improved. These excellent properties make Mg—Sb—Te material a promising candidate for the phase-change memory (PCM). (special topic — international conference on nanoscience and technology, china 2013)

  8. Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

    2010-06-30

    Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

  9. The crystal structure of ferdowsiite Ag8Sb4(As,Sb)4S16 and its relations to other ABX2 (A=Ag; B=As,Sb,Bi; X=S,Se) structures

    DEFF Research Database (Denmark)

    Makovicky, Emil; Topa, Dan

    2014-01-01

    arsenic. The crystal structure of ferdowsiite is a superstructure of a PbS like motif. The {100} planes of the PbS-like substructure are the (105̅), (301) and (010) planes in terms of the ferdowsiite lattice. The structure contains zig-zag chains of Sb1 connected via short Sb-S bonds and flanked by (Sb...

  10. Modeling of InGaSb thermophotovoltaic cells and materials

    Energy Technology Data Exchange (ETDEWEB)

    Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01

    A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

  11. Fermi surface study of CeSb

    International Nuclear Information System (INIS)

    Aoki, H.; Crabtree, G.W.; Joss, W.; Hulliger, F.

    1984-09-01

    A Fermi surface study of the ferromagnetic phase of CeSb is presented. The γ frequency branches arising from the electron surfaces at the X points, three separate frequency branches from the hole surfaces at the GAMMA point and the low frequency branch α have been observed. The effective mass ratios are low and range from approx. 0.2 for the α branch to approx. 1.0 for the high frequency branch of γ. The low effective mass ratios suggest that the admixture of the conduction states with the f state is small. We have observed a drastic change in the appearance of the dHvA signal at the phase transition between the ferromagnetic and lower field antiferromagnetic phases: The low frequency α oscillation suddenly disappears as the crystal enters the antiferromagnetic phase. By utilizing the change in the signal appearance, the transition field strength has been measured as a function of the field direction. The present experimental results, particularly the origin of the α oscillation, are discussed in the light of the p-f mixing theory and recent band structure calculations based on localized f orbitals

  12. Fermi surface study of CeSb

    International Nuclear Information System (INIS)

    Aoki, H.; Crabtree, G.; Joss, W.; Hulliger, F.

    1985-01-01

    A Fermi surface study of the ferromagnetic phase of CeSb is presented. The γ frequency branches arising from the electron surfaces at the X points, three separate frequency branches from the hole surfaces at the GAMMA point, and the low-frequency branch α have been observed. The effective mass ratios are low and range from approx.0.2 for the α branch to approx.1.0 for the high-frequency branch of γ. The low effective mass ratios suggest that the admixture of the conduction states with the f state is small. We have observed a drastic change in the appearance of the de Haas--van Alpen signal at the phase transition between the ferromagnetic and lower field antiferromagnetic phases: the low-frequency α oscillation suddenly disappears as the crystal enters the antiferromagnetic phase. By utilizing the change in the signal appearance, the transition field strength has been measured as a function of the field direction. The present experimental results particularly the origin of the α oscillation, are discussed in the light of the p-f mixing theory and recent band-structure calculations based on localized f orbitals

  13. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Science.gov (United States)

    Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

    2018-05-01

    The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

  14. Thermoelectric properties of ZnSb films grown by MOCVD

    International Nuclear Information System (INIS)

    Venkatasubramanian, R.; Watko, E.; Colpitts, T.

    1997-04-01

    The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 microV/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of ∼ 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-ω method are reported

  15. The system analysis of temperature and melting enthalpy of intermetallic compounds of antimony-lanthanoids system of Sb Ln, Sb2Ln composition

    International Nuclear Information System (INIS)

    Badalova, M.A.; Chamanova, M.; Dodkhoev, E.S.; Badalov, A.; Abdusalyamova, M.N.

    2015-01-01

    Present article is devoted to system analysis of temperature and melting enthalpy of intermetallic compounds of antimony-lanthanoids system of Sb Ln, Sb 2 Ln composition. The melting enthalpy was estimated. The temperature value was determined.

  16. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah Mohammed Abdullah; Singh, Nirpendra; Schwingenschlö gl, Udo

    2016-01-01

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling for the thermoelectric properties. The calculated band gaps of the bulk compounds are in agreement with experiments and significantly higher than those of the monolayers, which thus show lower Seebeck coefficients. Since also the electrical conductivity is lower, the monolayers are characterized by lower power factors. Therefore, interlayer coupling is found to be essential for the excellent thermoelectric response of CuSbS2 and CuSbSe2, even though it is weak.

  17. Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

    2011-07-01

    The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

  18. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah Mohammed Abdullah

    2017-01-08

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling for the thermoelectric properties. The calculated band gaps of the bulk compounds are in agreement with experiments and significantly higher than those of the monolayers, which thus show lower Seebeck coefficients. Since also the electrical conductivity is lower, the monolayers are characterized by lower power factors. Therefore, interlayer coupling is found to be essential for the excellent thermoelectric response of CuSbS2 and CuSbSe2, even though it is weak.

  19. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah M.

    2016-09-26

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling for the thermoelectric properties. The calculated band gaps of the bulk compounds are in agreement with experiments and significantly higher than those of the monolayers, which thus show lower Seebeck coefficients. Since also the electrical conductivity is lower, the monolayers are characterized by lower power factors. Therefore, interlayer coupling is found to be essential for the excellent thermoelectric response of CuSbS2 and CuSbSe2, even though it is weak.

  20. Crystal structure, magnetism, {sup 89}Y solid state NMR, and {sup 121}Sb Moessbauer spectroscopic investigations of YIrSb

    Energy Technology Data Exchange (ETDEWEB)

    Benndorf, Christopher [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Heletta, Lukas; Block, Theresa; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Eckert, Hellmut [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institute of Physics in Sao Carlos, University of Sao Paulo, Sao Carlos (Brazil)

    2017-02-15

    The ternary antimonide YIrSb was synthesized from the binary precursor YIr and elemental antimony by a diffusion controlled solid-state reaction. Single crystals were obtained by a flux technique with elemental bismuth as an inert solvent. The YIrSb structure (TiNiSi type, space group Pnma) was refined from single-crystal X-ray diffractometer data: a = 711.06(9), b = 447.74(5), c = 784.20(8) pm, wR{sub 2} = 0.0455, 535 F{sup 2} values, 20 variables. {sup 89}Y solid state MAS NMR and {sup 121}Sb Moessbauer spectra show single resonance lines in agreement with single-crystal X-ray data. YIrSb is a Pauli paramagnet. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

    International Nuclear Information System (INIS)

    Garza, J.G.; Shaji, S.; Rodriguez, A.C.; Das Roy, T.K.; Krishnan, B.

    2011-01-01

    Silver antimony selenide (AgSbSe 2 ) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb 2 S 3 ), silver selenide (Ag 2 Se), selenium (Se) and silver (Ag). Sb 2 S 3 thin film was prepared from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 , Ag 2 Se from a solution containing AgNO 3 and Na 2 SeSO 3 and Se thin films from an acidified solution of Na 2 SeSO 3 , at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10 -3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe 2 or AgSb(S,Se) 2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe 2 /Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V oc = 435 mV and J sc = 0.08 mA/cm 2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe 2 as an absorber material by a non-toxic selenization process is achieved.

  2. InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Dominec, Filip; Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.

    2017-01-01

    Roč. 464, Apr (2017), s. 206-210 ISSN 0022-0248 R&D Projects: GA MŠk LM2015087; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : low dimensional structures * MOVPE * InAs/GaSb composite quantum wells * AlSb Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

  3. AgSbSe{sub 2} and AgSb(S,Se){sub 2} thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garza, J.G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Rodriguez, A.C.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-10-01

    Silver antimony selenide (AgSbSe{sub 2}) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb{sub 2}S{sub 3}), silver selenide (Ag{sub 2}Se), selenium (Se) and silver (Ag). Sb{sub 2}S{sub 3} thin film was prepared from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}, Ag{sub 2}Se from a solution containing AgNO{sub 3} and Na{sub 2}SeSO{sub 3} and Se thin films from an acidified solution of Na{sub 2}SeSO{sub 3}, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10{sup -3} Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe{sub 2} or AgSb(S,Se){sub 2} depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe{sub 2}/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V{sub oc} = 435 mV and J{sub sc} = 0.08 mA/cm{sup 2} under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe{sub 2} as an absorber material by a non-toxic selenization process is achieved.

  4. Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb

    International Nuclear Information System (INIS)

    Miya, S.S.; Wagener, V.; Botha, J.R.

    2012-01-01

    The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga 1−x In x Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga 1−x In x Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga 1−x In x Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

  5. Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

    Science.gov (United States)

    Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

    2018-04-01

    The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

  6. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.

    Science.gov (United States)

    Ren, Dingding; Dheeraj, Dasa L; Jin, Chengjun; Nilsen, Julie S; Huh, Junghwan; Reinertsen, Johannes F; Munshi, A Mazid; Gustafsson, Anders; van Helvoort, Antonius T J; Weman, Helge; Fimland, Bjørn-Ove

    2016-02-10

    Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

  7. Gel-combustion synthesis of CoSb2O6 and its reduction to powdery Sb2Co alloy

    Directory of Open Access Journals (Sweden)

    MAJA JOVIC

    2009-01-01

    Full Text Available Sb2Co alloy in powdery form was synthesized via reduction with gaseous hydrogen of the oxide CoSb2O6, obtained by the citrate gel-combustion technique. The precursor was an aqueous solution of antimony nitrate, cobalt nitrate and citric acid. The precursor solution with mole ratio Co(II/Sb(V of 1:2 was gelatinized by evaporation of water. The gel was heated in air up to the temperature of self-ignition. The product of gel combustion was a mixture of oxides and it had to be additionally thermally treated in order to be converted to pure CoSb2O6. The reduction of CoSb2O6 by gaseous hydrogen yielded powdery Sb2Co as the sole phase. The process of oxide reduction to alloy was controlled by thermogravimetry, while X-ray diffractometry was used to control the phase compositions of both the oxides and alloys.

  8. Epitaxial Growth and Electronic Structure of Half Heuslers Co1-xNixTiSb (001), Ni1-xCoxTiSn, and PtLuSb

    Science.gov (United States)

    2016-01-09

    lineup of CoTiSb with conventional III/V’s, the valence-band discontinuities in abrupt CoTiSb/InGaAs(001) and CoTiSb/InAlAs(001) heterojunctions were...confirm identification of a topological surface state: first, the state must be confined and show no out-of-plane dispersion; second, the state

  9. PECASE: Multi-Spectral Photon Detection in Polymer/Nanoparticle Composites-Toward IR Photodectors and Solar Cells Applicable to Unmanned Vehicles

    Science.gov (United States)

    2016-03-31

    on Organic Solar Cells The maximum amount of surfactant that can be included in the AIR-MAPLE target and still yield photovoltaic function was...in Polymer/Nanoparticle Composites-Toward IR Photodectors and Solar Cells Applicable to Sb. GRANT NUMBER Unmanned Vehicles N00014-1 0-1-0481 Sc...photodetectors and solar cells deposited by RIR-MAPLE, and developing a simulation tool for optoelectronic device performance that accounts for RIR

  10. Innovations in IR projector arrays

    Science.gov (United States)

    Cole, Barry E.; Higashi, B.; Ridley, Jeff A.; Holmen, J.; Newstrom, K.; Zins, C.; Nguyen, K.; Weeres, Steven R.; Johnson, Burgess R.; Stockbridge, Robert G.; Murrer, Robert Lee; Olson, Eric M.; Bergin, Thomas P.; Kircher, James R.; Flynn, David S.

    2000-07-01

    In the past year, Honeywell has developed a 512 X 512 snapshot scene projector containing pixels with very high radiance efficiency. The array can operate in both snapshot and raster mode. The array pixels have near black body characteristics, high radiance outputs, broad band performance, and high speed. IR measurements and performance of these pixels will be described. In addition, a vacuum probe station that makes it possible to select the best die for packaging and delivery based on wafer level radiance screening, has been developed and is in operation. This system, as well as other improvements, will be described. Finally, a review of the status of the present projectors and plans for future arrays is included.

  11. STATYBINIŲ MEDŽIAGŲ KONKURENCINGUMAS IR TENDENCIJOS

    OpenAIRE

    Kontrimas, Robertas

    2010-01-01

    Darbe analizuojamas statybinių medžiagų konkurencingumas, nustatyti statybinių medžiagų konkurencingumą įtakojantys veiksniai ir pateikti pasiūlymai rinkos gerinimui. Pasitvirtino hipotezė, kad statybinių medžiagų paklausą ir kainas įtakoja klientų poreikiai ir jų finansinės galimybės, tačiau pasaulinės krizės įtaka yra labai ženkli,. Atlikta darbuotojų ir pirkėjų apklausa padėjo nustatyti, kokios statybinės medžiagos dažniausiai yra perkamos, kaip klientai ir darbuotojai vertina įmonę ir jos...

  12. Ab Initio Molecular Dynamics Studies of Pb m Sb n ( m + n ≤ 9) Alloy Clusters

    Science.gov (United States)

    Song, Bingyi; Xu, Baoqiang; Yang, Bin; Jiang, Wenlong; Chen, Xiumin; Xu, Na; Liu, Dachun; Dai, Yongnian

    2017-10-01

    Structure, stability, and dynamics of Pb m Sb n ( m + n ≤ 9) clusters were investigated using ab initio molecular dynamics. Size dependence of binding energies, the second-order energy difference of clusters, dissociation energy, HOMO-LUMO gaps, Mayer bond order, and the diffusion coefficient of Pb m Sb n clusters were discussed. Results suggest that Pb3Sb2, Pb4Sb2, and Pb5Sb4 ( n = 2 or 4) clusters have higher stability than other clusters, which is consistent with previous findings. In case of Pb-Sb alloy, the dynamics results show that Pb4Sb2 (Pb-22.71 wt pct Sb) can exist in gas phase at 1073 K (800 °C), which reasonably explains the azeotropic phenomenon, and the calculated values are in agreement with the experimental results (Pb-22 wt pct Sb).

  13. First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

    Science.gov (United States)

    Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

    2015-05-01

    First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

  14. Sb interactions with TaC precipitates and Cu in ion-implanted α-Fe

    International Nuclear Information System (INIS)

    Follstaedt, D.M.; Myers, S.M.

    1980-01-01

    The interactions of Sb with the other species implanted into Fe to form Fe-Ta-C-Sb and Fe-Cu-Sb alloys have been examined with transmission electron microscopy and Rutherford backscattering following annealing at 873 0 K. Trapping of Sb at TaC precipitates is observed in the former alloy just as was previously observed in Fe-Ti-C-Sb. In Fe-Cu-Sb, Sb interactions are governed by the atomic ratio of Sb to Cu. For ratios between 0.2 to 0.4, the compound β-Cu 3 Sb was observed to form. For Sb to Cu ratios approx.< 0.1, fcc Cu precipitates were observed. In addition to the expected Sb dissolution in Cu, Sb trapping by Cu precipitates is also observed. The binding enthalpy of Sb at both TaC and Cu precipitates with respect to a solution site in the bcc Fe is the same as observed for TiC, approx. 0.4 eV. The constancy of the binding enthalpy at such chemically dissimilar precipitates supports the hypothesis that the trapping is due to the structural discontinuity of the precipitate-host interface. The observed Sb trapping at precipitates is of potential significance for the control of temper embrittlement in bcc steels

  15. Hermann agreement updates IRS guidelines for incentives.

    Science.gov (United States)

    Broccolo, B M; Peregrine, M W

    1995-01-01

    The October 1994 agreement between the Internal Revenue Service (IRS) and Hermann Hospital of Houston, Texas, elucidates current IRS policy on physician recruitment incentives. The IRS distinguishes between the recruiting and the retention of physicians and perimts incentives beyond reasonable compensation in the former but not the latter circumstance. This new agreement, while not legally precedential, nevertheless provides guidance for healthcare organizations seeking safe harbor protection.

  16. Crystal structure and bonding characteristics of In-doped β-Zn4Sb3

    International Nuclear Information System (INIS)

    Tang, Dingguo; Zhao, Wenyu; Cheng, Sudan; Wei, Ping; Yu, Jian; Zhang, Qingjie

    2012-01-01

    The effects of indium impurity on the crystal structure and bonding characteristics of In-doped β-Zn 4 Sb 3 were investigated by powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The XRD Rietveld refinement indicates that the indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site and simultaneously leads to the increase of Zn occupancy. The observations of binding energy shift and a new valence state in Sb 3d core-level XPS spectra can be attributed to the charge transfer from In and Zn to Sb. As a result, more electropositive Zn atoms are needed to maintain the charge balance. The reduction of the lattice thermal conductivity is ascribed to the formation of the asymmetric Sb–In bond, resulting in much low lattice thermal conductivity of 0.49 W −1 K −1 of Zn 4 Sb 2.96 In 0.04 . - Graphical abstract: The indium impurity substitutes one of Sb atoms in Sb–Sb dimer, resulting the charge transfer from In to Sb, which leads to the binding energy of Sb 3d core level XPS spectra shift to low value. Highlights: ► The indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site. ► The occupancy of Zn increases by the In substitution for Sb, whereas that of Sb keeps constant. ► The binding energy of Sb 3d shifts to low value. ► The charge transfer occurs from In and Zn to Sb.

  17. OH/IR stars in the Galaxy

    International Nuclear Information System (INIS)

    Baud, B.

    1978-01-01

    Radio astronomical observations leading to the discovery of 71 OH/IR sources are described in this thesis. These OH/IR sources are characterized by their double peaked OH emission profile at a wavelength of 18 cm and by their strong IR infrared emission. An analysis of the distribution and radial velocities of a number of previously known and new OH/IR sources was performed. The parameter ΔV (the velocity separation between two emission peaks of the 18 cm line profile) was found to be a good criterion for a population classification with respect to stellar age

  18. Phase equilibria melt-solid in the systems Pb-InSb-CaSb and Pb-InCs-GaAs

    International Nuclear Information System (INIS)

    Grebenyuk, A.M.; Charykov, N.A.; Puchkov, L.V.

    1992-01-01

    Results of experimental investigation and thermodynamic calculation of fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs thernary systems, which haven't been investigated earlier, are presented. Fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs systems contain two crystallization fields: solid solutions of In x Ga 1-x Sb and Pb, In x Ga 1-x As and Pb. The latter fields are retained against Pb figurative point and conform to 582 K < T < 593 K crystallization temperatures

  19. Electronic and magnetic properties of SmCrSb3 and GdCrSb3: A first principles study

    International Nuclear Information System (INIS)

    Sandeep; Ghimire, M.P.; Thapa, R.K.

    2011-01-01

    The density of states (DOS) and the magnetic moments of SmCrSb 3 and GdCrSb 3 have been studied by first principles full-potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT). For the exchange-correlation potential, the local-spin density approximations with correlation energy (LSDA+U) method have been used. Total and partial DOS have been computed using the WIEN2k code. DOS result shows the exchange-splittings of Cr-3d and rare-earth (R) 4f states electrons, which are responsible for the ground state ferromagnetic (FM) behavior of the systems. The FM behavior of these systems is strongly influenced by the average number of Cr-3d and Sm (Gd) 4f-electrons. The effective moment of SmCrSb 3 is found to be 7.07 μ B while for GdCrSb 3 it is 8.27 μ B . The Cr atom plays a significant role on the magnetic properties due to the hybridization between Cr-3d and Sb-5p states. - Highlights: → DOS and the magnetic moments of SmCrSb 3 and GdCrSb 3 are studied by full-FP-LAPW method. → Exchange splitting of eg and t2g of Cr-3d states and the rare-earth 4f state electrons are responsible for ground state ferromagnetism. → Rare-earth magnetic moments are greater than Cr moment indicating presence of 4f states.

  20. Quaternary InGaAsSb Thermophotovoltaic Diodes

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-01-01

    In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

  1. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  2. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  3. Atmospheric Entry Experiments at IRS

    Science.gov (United States)

    Auweter-Kurtz, M.; Endlich, P.; Herdrich, G.; Kurtz, H.; Laux, T.; Löhle, S.; Nazina, N.; Pidan, S.

    2002-01-01

    Entering the atmosphere of celestial bodies, spacecrafts encounter gases at velocities of several km/s, thereby being subjected to great heat loads. The thermal protection systems and the environment (plasma) have to be investigated by means of computational and ground facility based simulations. For more than a decade, plasma wind tunnels at IRS have been used for the investigation of TPS materials. Nevertheless, ground tests and computer simulations cannot re- place space flights completely. Particularly, entry mission phases encounter challenging problems, such as hypersonic aerothermodynamics. Concerning the TPS, radiation-cooled materials used for reuseable spacecrafts and ablator tech- nologies are of importance. Besides the mentioned technologies, there is the goal to manage guidance navigation, con- trol, landing technology and inflatable technologies such as ballutes that aim to keep vehicles in the atmosphere without landing. The requirement to save mass and energy for planned interplanetary missions such as Mars Society Balloon Mission, Mars Sample Return Mission, Mars Express or Venus Sample Return mission led to the need for manoeuvres like aerocapture, aero-breaking and hyperbolic entries. All three are characterized by very high kinetic vehicle energies to be dissipated by the manoeuvre. In this field flight data are rare. The importance of these manoeuvres and the need to increase the knowledge of required TPS designs and behavior during such mission phases point out the need of flight experiments. As result of the experience within the plasma diagnostic tool development and the plasma wind tunnel data base, flight experiments like the PYrometric RE-entry EXperiment PYREX were developed, fully qualified and successfully flown. Flight experiments such as the entry spectrometer RESPECT and PYREX on HOPE-X are in the conceptual phase. To increase knowledge in the scope of atmospheric manoeuvres and entries, data bases have to be created combining both

  4. Investigation of InAs/GaSb-based superlattices by diffraction methods

    Energy Technology Data Exchange (ETDEWEB)

    Ashuach, Y.; Kauffmann, Y.; Lakin, E. [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.i [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Grossman, S.; Klin, O.; Weiss, E. [SCD, SemiConductor Devices, P. O. Box 2250, Haifa 31021 (Israel)

    2010-02-15

    We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAs/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin InSb sub-layers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers.

  5. Syntheses, and crystal and electronic structures of the new Zintl phases Na2ACdSb2 and K2ACdSb2 (A=Ca, Sr, Ba, Eu, Yb): Structural relationship with Yb2CdSb2 and the solid solutions Sr2-xAxCdSb2, Ba2-xAxCdSb2 and Eu2-xYbxCdSb2

    International Nuclear Information System (INIS)

    Saparov, Bayrammurad; Saito, Maia; Bobev, Svilen

    2011-01-01

    Presented are the details of the syntheses, crystal and electronic structures of a new family of Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb), as well as the solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 . The structures of Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) were determined to be of a new type with the non-centrosymmetric space group Pmc2 1 (no. 26), Pearson symbol oP12, with lattice parameters a=4.684(1)-4.788(1) A; b=9.099(3)-9.117(2) A; c=7.837(1)-8.057(2) A for the Na 2 ACdSb 2 series, and a=4.6637(9)-5.0368(8) A; b=9.100(2)-9.8183(15) A; and c=7.7954(15)-8.4924(13) A for K 2 ACdSb 2 , respectively. The solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 (x∼1) are isostructural and isoelectronic to the recently reported Yb 2 CdSb 2 (space group Cmc2 1 (no. 36), Pearson symbol cP20). All discussed structures are based upon CdSb 2 4- polyanionic layers, similar to the ones observed in Yb 2 CdSb 2 , with various alkali- and/or alkaline-earth cations coordinated to them. Magnetic susceptibility and Seebeck coefficient measurements on selected Eu 2-x Yb x CdSb 2 samples, taken at low temperatures up to 300 K, are also reported. -- Graphical abstract: The quaternary Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) with novel layered structures have been synthesized for the first time and structurally characterized by single-crystal X-ray diffraction. Reported as well are the results from crystallographic and property studies of the closely related solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) are new quaternary Zintl phases. → Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 4 tetrahedra. → Eu 2-x Yb x CdSb 2 (1< x<2) exhibit high Seebeck coefficient (217 μV/K at RT).

  6. Super VHS video cassette recorder, A-SB88; Super VHS video A-SB88

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    A super VHS video cassette recorder, A-SB88, was commercialized having no compromised aspects at all in picture quality, sound quality, operability, energy conservation, design, etc. In the picture quality, the VCR is mounted with the S-ET system capable of realizing a quality comparable to SVHS with a three-dimensional Y/C detached circuit for dynamic moving image detection, three-dimensional DNR(digital noise reduction) and TBC(time base corrector), FE(flying erase) circuit, and a normal tape. In the operability, it is provided with a remote control transfer in large LCD, 400x high speed rewind, reservation system capable of simply reserving a serial drama for example, and a function for searching the end of picture recording; also, in the environmental aspect, the stand-by power consumption was reduced to 1/10 of conventional models (ratio with Toshiba A-BS6 at display power off). (translated by NEDO)

  7. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    Directory of Open Access Journals (Sweden)

    Stefano Cecchi

    2017-02-01

    Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

  8. New insights into the crystal chemistry of agardite-(Ce): refinement of the crystal structure, hydrogen bonding, and epitaxial intergrowths with the Sb-analogue of auriacusite

    Science.gov (United States)

    Aksenov, Sergey M.; Chukanov, Nikita V.; Göttlicher, Jörg; Möckel, Steffen; Varlamov, Dmitriy; Van, Konstantin V.; Rastsvetaeva, Ramiza K.

    2018-01-01

    Agardite-(Ce) from Clara Mine, Schwarzwald, Germany, has been investigated by means of electron microprobe analysis, single-crystal X-ray analysis, XANES spectroscopy and IR spectroscopy. Hexagonal unit-cell parameters are: a = 13.598(6), c = 5.954(3) Å; V = 953.5(2) Å3; space group P63/ m. The structure has been solved and refined to final R 1 = 3.87%, w R 2 = 5.02 for 786 I > 3 σ( I). Hydrogen atoms have been localized. The crystal-chemical formula is ( Z = 2): A(1)(Ce0.82Ca0.14Sr0.04)Σ1.00 A(2)(Ca0.03Ce0.02)Σ0.05 [Cu5.75(Fe3+, Mn)0.20]Σ5.95 [ T(1)(AsO4) 2.96 T(2) (SbO4)0.04)]Σ3.00 (OH)5.96O0.04·3H2O. Hydrogen bonding in agardite-series minerals has been characterized for the first time. IR spectra of agardite-(Ce) and agardite-(Nd) from Lavrion used for comparison, as well as structural data indicate the presence of isolated H+ cations that do not form strong covalent bonds with coordinating O atoms. Agardite-(Ce) from Clara Mine forms epitaxial growths with the Sb-analogue of auriacusite. The latter mineral was characterized by EDS analyses; its typical empirical formulae are {Ca}_{0.0 6} {Ce}_{0.0 4} {Fe}^{ 3+ }{}_{ 1.0 6} {Cu}_{0. 8 9}[(SbO4)0.58(AsO4)0.38(SiO4)0.04]Σ1.00(O,OH) and {Ca}_{0.0 7 5} {Ce}_{0.0 4} {Fe}^{ 3+ }{}_{0. 9 3} {Cu}_{0. 9 7}[(SbO4)0.59(AsO4)0.35(SiO4)0.06]Σ1.00(O,OH). The formation of uniaxial growths of the Sb-analogue of auriacusite and agardite-(Ce) is caused by the close values of their c parameters (for auriacusite s.s. c = 5.9501(5) Å). Three-valence state of iron and five-valence of antimony in both minerals has been validated by means of Fe K- and Sb L 2,3-edge XANES spectroscopy.

  9. Effect of tungsten on the phase-change properties of Ge_8Sb_2Te_1_1 Thin Films for the Phase-change device

    International Nuclear Information System (INIS)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-01-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge_8Sb_2Te_1_1 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge_8Sb_2Te_1_1 and W-doped Ge_8Sb_2Te_1_1 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E_o_p), slope B"1"/"2, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B"1"/"2 and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge_8Sb_2Te_1_1 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T_c). An increase in the T_c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R_s) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  10. Effect of tungsten on the phase-change properties of Ge8Sb2Te11 thin films for the phase-change device

    Science.gov (United States)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-07-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge8Sb2Te11 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and W-doped Ge8Sb2Te11 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si ( p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the 0 - 400 ° C temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer's Law equation, the optical-energy band gap ( E op ), slope B 1/2, and slope 1/ F were calculated. For the crystalline materials, an increase in the slope B 1/2 and 1/ F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge8Sb2Te11 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature ( T c ). An increase in the T c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance ( R s ) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  11. Teaching IR to Medical Students: A Call to Action.

    Science.gov (United States)

    Lee, Aoife M; Lee, Michael J

    2018-02-01

    Interventional radiology (IR) has grown rapidly over the last 20 years and is now an essential component of modern medicine. Despite IR's increasing penetration and reputation in healthcare systems, IR is poorly taught, if taught at all, in most medical schools. Medical students are the referrers of tomorrow and potential IR recruits and deserve to be taught IR by expert IRs. The lack of formal IR teaching curricula in many medical schools needs to be addressed urgently for the continued development and dissemination of, particularly acute, IR services throughout Europe. We call on IRs to take up the baton to teach IR to the next generation of doctors.

  12. Synthesis, Structural and Antibacterial Studies of New Dithiocarbamate Complexes of Sb (III) And Bi (III)

    International Nuclear Information System (INIS)

    Nur Amirah Jamaluddin; Ibrahim Baba; Nazlina Ibrahim

    2014-01-01

    Six new dithiocarbamate complexes from three different amines, for example N-ethyl ethanol-, N-butylethyl- and N-benzylmethylamine were successfully prepared using in situ method. All complexes were characterized by elemental analysis, IR, UV-Vis, 13 C and 1 H NMR. Elemental analysis data (C, H, N and S) showed an agreement with the general formula of MCl(S 2 CNR ' R '' ) 2 , (M = Sb (III), Bi (III); R ' = ethyl, butyl and benzyl; R '' = ethanol, ethyl and methyl). The complexes had been characterized by infrared spectroscopy that showed a thioureido bands, v(C-N) in the region of 1427 - 1490 cm -1 followed by v(C-S) bands that can be seen in the region of 935 - 1060 cm -1 and v(M-S) bands existed in the region of 350 - 392 cm -1 . Maximum wavelength absorption for ultraviolet-visible spectroscopy for N-C-S group was at 254 nm which indicates π → π * transition. Data from 13 C NMR showed a signal in the region of 198.39 - 199.44 ppm that corresponded to the NCS 2 group. The crystal structure of bis(N,N ' utylethyldithiocarbamato)chloride antimony (III), SbCl (S 2 CN(C 4 H 9 )(C 2 H 5 )) 2 demonstrated a five-coordination geometry, triclinic system, space group P1 with a = 10.0141(8) Armstrong, b = 10.1394(7) Am strong, c = 11.8665(9) Armstrong, α = 67.960(2) degree, β = 87.616(2) degree and γ = 80.172(2) degree. Minimum inhibitory concentration (MIC) and minimum bactericidal concentration (MBC) tests were done using five dithiocarbamate complexes which are Bi Cl[S 2 CN(C 2 H 5 )(C 2 H 4 OH)) 2 , SbCl[S 2 CN(C 2 H 5 )(C 2 H 4 OH)) 2 , Bi Cl(S 2 CN(C 4 H 9 )(C 2 H 5 )) 2 , SbCl(S 2 CN(C 4 H 9 )(C 2 H 5 )) 2 , Bi Cl(S 2 CN(C 7 H 7 )(CH 3 )) 2 towards S. aureus, S. epidermidis, E. aerogenes and E. coli. It was found that all four complexes were active against S. aureus except SbCl(S 2 CN(C 2 H 5 )(C 2 H 4 OH)) 2 while Bi Cl(S 2 CN(C 7 H 7 )(CH 3 )) 2 and Bi Cl(S 2 CN(CH 3 )(C 6 H 11 )) 2 complexes were active against S. epidermidis with MIC value of 5.0 mg/ m

  13. Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

    Science.gov (United States)

    Nghiem, Jean; Giard, E.; Delmas, M.; Rodriguez, J. B.; Christol, P.; Caes, M.; Martijn, H.; Costard, E.; Ribet-Mohamed, I.

    2017-09-01

    In recent years, Type-II InAs/GaSb superlattice (T2SL) has emerged as a new material technology suitable for high performance infrared (IR) detectors operating from Near InfraRed (NIR, 2-3μm) to Very Long Wavelength InfraRed (LWIR, λ > 15μm) wavelength domains. To compare their performances with well-established IR technologies such as MCT, InSb or QWIP cooled detectors, specific electrical and radiometric characterizations are needed: dark current, spectral response, quantum efficiency, temporal and spatial noises, stability… In this paper, we first present quantum efficiency measurements performed on T2SL MWIR (3-5μm) photodiodes and on one focal plane array (320x256 pixels with 30μm pitch, realized in the scope of a french collaboration ). Different T2SL structures (InAs-rich versus GaSb-rich) with the same cutoff wavelength (λc= 5μm at 80K) were studied. Results are analysed in term of carrier diffusion length in order to define the optimum thickness and type of doping of the absorbing zone. We then focus on the stability over time of a commercial T2SL FPA (320x256 pixels with 30μm pitch), measuring the commonly used residual fixed pattern noise (RFPN) figure of merit. Results are excellent, with a very stable behaviour over more than 3 weeks, and less than 10 flickering pixels, possibly giving access to long-term stability of IR absolute calibration.

  14. [Sb{sub 4}Au{sub 4}Sb{sub 4}]{sup 2−}: A designer all-metal aromatic sandwich

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Wen-Juan; You, Xue-Rui [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); Guo, Jin-Chang [Department of Chemistry, Xinzhou Teachers University, Xinzhou 034000 (China); Li, Da-Zhi, E-mail: hj.zhai@sxu.edu.cn, E-mail: ldz005@126.com [Department of Chemical Engineering, Binzhou University, Binzhou 256603 (China); Wang, Ying-Jin [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); Department of Chemistry, Xinzhou Teachers University, Xinzhou 034000 (China); Sun, Zhong-Ming [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhai, Hua-Jin, E-mail: hj.zhai@sxu.edu.cn, E-mail: ldz005@126.com [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006 (China)

    2016-07-28

    We report on the computational design of an all-metal aromatic sandwich, [Sb{sub 4}Au{sub 4}Sb{sub 4}]{sup 2−}. The triple-layered, square-prismatic sandwich complex is the global minimum of the system from Coalescence Kick and Minima Hopping structural searches. Following a standard, qualitative chemical bonding analysis via canonical molecular orbitals, the sandwich complex can be formally described as [Sb{sub 4}]{sup +}[Au{sub 4}]{sup 4−}[Sb{sub 4}]{sup +}, showing ionic bonding characters with electron transfers in between the Sb{sub 4}/Au{sub 4}/Sb{sub 4} layers. For an in-depth understanding of the system, one needs to go beyond the above picture. Significant Sb → Au donation and Sb ← Au back-donation occur, redistributing electrons from the Sb{sub 4}/Au{sub 4}/Sb{sub 4} layers to the interlayer Sb–Au–Sb edges, which effectively lead to four Sb–Au–Sb three-center two-electron bonds. The complex is a system with 30 valence electrons, excluding the Sb 5s and Au 5d lone-pairs. The two [Sb{sub 4}]{sup +} ligands constitute an unusual three-fold (π and σ) aromatic system with all 22 electrons being delocalized. An energy gap of ∼1.6 eV is predicted for this all-metal sandwich. The complex is a rare example for rational design of cluster compounds and invites forth-coming synthetic efforts.

  15. Effects upon metabolic pathways and energy production by Sb(III and As(III/Sb(III-oxidase gene aioA in Agrobacterium tumefaciens GW4.

    Directory of Open Access Journals (Sweden)

    Jingxin Li

    Full Text Available Agrobacterium tumefaciens GW4 is a heterotrophic arsenite [As(III]/antimonite [Sb(III]-oxidizing strain. The As(III oxidase AioAB is responsible for As(III oxidation in the periplasm and it is also involved in Sb(III oxidation in Agrobacterium tumefaciens 5A. In addition, Sb(III oxidase AnoA and cellular H2O2 are also responsible for Sb(III oxidation in strain GW4. However, the deletion of aioA increased the Sb(III oxidation efficiency in strain GW4. In the present study, we found that the cell mobility to Sb(III, ATP and NADH contents and heat release were also increased by Sb(III and more significantly in the aioA mutant. Proteomics and transcriptional analyses showed that proteins/genes involved in Sb(III oxidation and resistance, stress responses, carbon metabolism, cell mobility, phosphonate and phosphinate metabolism, and amino acid and nucleotide metabolism were induced by Sb(III and were more significantly induced in the aioA mutant. The results suggested that Sb(III oxidation may produce energy. In addition, without periplasmic AioAB, more Sb(III would enter bacterial cells, however, the cytoplasmic AnoA and the oxidative stress response proteins were significantly up-regulated, which may contribute to the increased Sb(III oxidation efficiency. Moreover, the carbon metabolism was also activated to generate more energy against Sb(III stress. The generated energy may be used in Sb transportation, DNA repair, amino acid synthesis, and cell mobility, and may be released in the form of heat.

  16. Long-range order in InAsSb

    Science.gov (United States)

    Jen, H. R.; Ma, K. Y.; Stringfellow, G. B.

    1989-03-01

    Results are presented of transmission electron diffraction (TED) observations, demonstrating, for the first time, a CuPt-type ordering in InAs(1-x)Sb(x) alloys, over a wide range of x values (from x = 0.22 to 0.88). The InAsSb alloys were prepared by OMVPE on (001) oriented undoped InSb or InAs substrates. The ordering-induced spots on the TED patterns show the highest intensity for x of about 0.5 and the lowest intensity toward each binary end compound. Only two of the four variants are formed during growth. In some areas, the degree of order for these two variants, 1/2(-1 1 1) and 1/2(1 -1 1), is equal, and in other areas, one variant dominates.

  17. Old friends in a new light: 'SnSb' revisited

    International Nuclear Information System (INIS)

    Noren, Lasse; Withers, Ray L.; Schmid, Siegbert; Brink, Frank J.; Ting, Valeska

    2006-01-01

    The binary pnictide 'SnSb' has been re-investigated using a combination of X-ray, synchrotron and electron diffraction as well as electron microprobe analysis. Its structure was found to be incommensurately modulated with an underlying rhombohedral parent structure of space group symmetry R3-bar m (No. 166), unit cell parameters a h =b h =4.3251(4)A, c h =5.3376(6)A in the hexagonal setting. The incommensurate primary modulation wave vector q h =1.3109(9)c h * and the superspace group symmetry is R3-bar m (0, 0, ∼1.311) (No. 166.1). The refinement of the incommensurate structure indicates that the satellite reflections arise from displacive shifts of presumably essentially pure Sn and Sb layers along the hexagonal c-axis, with increasing distance between the Sn-layers and decreasing distance between the Sb layers

  18. Extremely large magnetoresistance and electronic structure of TmSb

    Science.gov (United States)

    Wang, Yi-Yan; Zhang, Hongyun; Lu, Xiao-Qin; Sun, Lin-Lin; Xu, Sheng; Lu, Zhong-Yi; Liu, Kai; Zhou, Shuyun; Xia, Tian-Long

    2018-02-01

    We report the magnetotransport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at the X point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility.

  19. Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

    International Nuclear Information System (INIS)

    Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

    2008-01-01

    Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

  20. Premier's imaging IR limb sounder

    Science.gov (United States)

    Kraft, Stefan; Bézy, Jean-Loup; Meynart, Roland; Langen, Jörg; Carnicero Dominguez, Bernardo; Bensi, Paolo; Silvestrin, Pierluigi

    2017-11-01

    The Imaging IR Limb Sounder (IRLS) is one of the two instruments planned on board of the candidate Earth Explorer Core Mission PREMIER. PREMIER stands for PRocess Exploration through Measurements of Infrared and Millimetre-wave Emitted Radiation. PREMIER went recently through the process of a feasibility study (Phase A) within the Earth Observation Envelope Program. Emerging from recent advanced instrument technologies IRLS shall, next to a millimetre-wave limb sounder (called STEAMR), explore the benefits of three-dimensional limb sounding with embedded cloud imaging capability. Such 3D imaging technology is expected to open a new era of limb sounding that will allow detailed studies of the link between atmospheric composition and climate, since it will map simultaneously fields of temperature and many trace gases in the mid/upper troposphere and stratosphere across a large vertical and horizontal field of view and with high vertical and horizontal resolution. PREMIER shall fly in a tandem formation looking backwards to METOP's swath and thereby improve meteorological and environmental analyses.

  1. Investigation on the structural stability and electronic properties of InSb nanostructures – A DFT approach

    Directory of Open Access Journals (Sweden)

    V. Nagarajan

    2014-06-01

    Full Text Available The realistic InSb nanostructures namely InSb nanoring, InSb nanocube, InSb nanocube-18, InSb nanosheet, InSb nanocage and InSb nanocube-27 are simulated and optimized successfully using B3LYP/LanL2DZ basis set. The stability of InSb nanostructures is studied in terms of binding energy, vibrational studies and calculated energy. The electronic properties of InSb nanostructures are discussed using ionization potential, electron affinity and HOMO–LUMO gap. Point symmetry and dipole moment of InSb nanostructures are reported. Incorporation of impurity atom in InSb nanostructures is studied using embedding energy. The present study provides the information regarding the enhanced electronic properties of InSb nanostructure which finds its potential importance in microelectronics and optoelectronic devices.

  2. Atom condensation on an atomically smooth surface: Ir, Re, W, and Pd on Ir(111)

    International Nuclear Information System (INIS)

    Wang, S.C.; Ehrlich, G.

    1991-01-01

    The distribution of condensing metal atoms over the two types of sites present on an atomically smooth Ir(111) has been measured in a field ion microscope. For Ir, Re, W, and Pd from a thermal source, condensing on Ir(111) at ∼20 K, the atoms are randomly distributed, as expected if they condense at the first site struck

  3. Biochemical applications of FT-IR spectroscopy

    NARCIS (Netherlands)

    Pistorius, A.M.A.

    1996-01-01

    This thesis describes the use of (FT-)IR spectroscopy in general biochemical research. In chapter 3, IR spectroscopy is used in the quantitation of residual detergent after reconstitution of an integral membrane protein in a pre-defined lipid matrix. This chapter discusses the choice of the

  4. How to remedy Eurocentrism in IR?

    DEFF Research Database (Denmark)

    Bilgin, Pinar

    2016-01-01

    While IR's Eurocentric limits are usually acknowledged, what those limits mean for theorizing about the international is seldom clarified. In The Global Transformation, Buzan and Lawson offer a 'composite approach' that goes some way towards addressing IR's Eurocentrism, challenging existing myth...

  5. Quantitative gas analysis with FT-IR

    DEFF Research Database (Denmark)

    Bak, J.; Larsen, A.

    1995-01-01

    Calibration spectra of CO in the 2.38-5100 ppm concentration range (22 spectra) have been measured with a spectral resolution of 4 cm(-1), in the mid-IR (2186-2001 cm(-1)) region, with a Fourier transform infrared (FT-IR) instrument. The multivariate calibration method partial least-squares (PLS1...

  6. Benzene adsorption and oxidation on Ir(111)

    NARCIS (Netherlands)

    Weststrate, C.J.; Bakker, J.W.; Gluhoi, A.C.; Ludwig, W.; Nieuwenhuys, B.E.

    2007-01-01

    Adsorption, decompn. and oxidn. of benzene on Ir(1 1 1) was studied by high resoln. (synchrotron) XPS, temp. programmed desorption and LEED. Mol. adsorption of benzene on Ir(1 1 1) is obsd. between 170 K and 350 K. Above this temp. both desorption and decompn. of benzene take place. An ordered

  7. Experimental determination of the energy levels of the antimony atom (Sb II), ions of the antimony (Sb II, Sb III), mercury (Hg IV) and cesium (Cs X)

    International Nuclear Information System (INIS)

    Arcimowicz, B.

    1993-01-01

    The thesis concerns establishing the energy scheme of the electronic levels, obtained from the analysis of the investigated spectra of antimony atom and ions (Sb I, Sb II, Sb III) and higher ionized mercury (Hg IV) and cesium (Cs X) atoms. The experimental studies were performed with optical spectroscopy methods. The spectra of the elements under study obtained in the spectral range from visible (680 nm) to vacuum UV (40 nm) were analysed. The classification and spectroscopic designation of the experimentally established 169 energy levels were obtained on the basis of the performed calculations and the fine structure analysis. The following configurations were considered: 5s 2 5p 2 ns, 5s 2 5p 2 n'd, 5s5p 4 of the antimony atom, 5s 2 5pns, 5s 2 5pn'd, 5s5p 3 of the ion Sb II, 5s 2 ns, 5s 2 n'd, 5s5p 2 of the on Sb III, 5d 8 6p of the ion Hg IV 4d 9 5s and 4d 9 5p Cs X. A reclassification was performed and some changes were introduced to the existing energy level scheme of the antimony atom, with the use of the information obtained from the absorption spectrum taken in the VUV region by the ''flash pyrolysis'' technique. The measurements of the hyperfine splittings in 19 spectral lines belonging to the antimony atom and ions additionally confirmed the assumed classification of the levels involved in these lines. The energy level scheme, obtained for Sb III, was compared to the other ones in the isoelectronic sequence starting with In I. On the basis of the analysis of the Hg IV spectrum it was proved that ground configuration of the three times ionized mercury atom is 5d 9 not 5d 8 6s as assumed until now. The fine structure, established from the analysis of the spectra of the elements under study was examined in multiconfiguration approximation. As a result of the performed calculations the fine structure parameters and wavefunctions were determined for the levels whose energy values were experimentally established in the thesis. (author). 140 refs, 22 figs, 17

  8. Development in Zn4Sb-based thermoelectric materials

    DEFF Research Database (Denmark)

    Yin, Hao

    or thermopower,  the electrical conductivity, the thermal conductivity and T the absolute temperature. The best thermoelectrics are heavily doped semiconductors with high thermoelectric power factors and low thermal conductivities, known as “Phonon Glasses Electrical Crystals”. Zn4Sb3 is one such material......-section. The following part reports the effect of nano-particles on the thermoelectric properties and thermal stability of Zn4Sb3. Though TiO2 nano particles have remarkably enhanced the stability, the thermoelectric performance of all the nano-composites deteriorates. Optimization of the content of the nano...

  9. Cathodoluminescence study of ytterbium doped GaSb

    International Nuclear Information System (INIS)

    Hidalgo, P.; Mendez, B.; Ruiz, C.; Bermudez, V.; Piqueras, J.; Dieguez, E.

    2005-01-01

    Yb-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb 3+ ions has been detected

  10. Magnetic Phase Transitions of CeSb. I

    DEFF Research Database (Denmark)

    Fischer, Pernille Hertz; Lebech, Bente; Meier, G.

    1978-01-01

    The magnetic ordering of the anomalous antiferromagnet CeSb, which has a NaCl crystal structure, was determined in zero applied magnetic field by means of neutron diffraction investigations of single crystals and powder. Below the Neel temperature TN of (16.1+or-0.1)K, there exist six partially...... a first-order phase transition at TN. At approximately TN/2 there is a first-order phase transition to a FCC type IA low-temperature configuration. The unusual magnetic properties of CeSb, which result from anisotropic exchange and crystalline electric field effects, resemble those of certain actinide Na...

  11. Decays of 116Sb isomers to levels in 116Sn

    International Nuclear Information System (INIS)

    Gacsi, Z.; Raman, S.

    1994-01-01

    The excited states of 116 Sn were studied by means of the decays of the 15.8-min, 3 + 116 Sb ground state, and the 60.3-min, 8 - 116 Sb isomer. Over 50 γ rays were observed; these were incorporated into a level scheme consisting of 32 excited states. Except for one new level proposed at 3.986 MeV, the current study fully supports an exhaustive study of levels in 116 Sn reported earlier. The previous study was an attempt to develop a nearly ''complete'' level scheme of 116 Sn up to an excitation energy of 4.3 MeV

  12. Lead activity in Pb-Sb-Bi alloys

    Directory of Open Access Journals (Sweden)

    A. S. Kholkina

    2014-11-01

    Full Text Available The present work is devoted to the study of lead thermodynamic activity in the Pb-Sb-Bi alloys. The method for EMF measurements of the concentration cell: (–Pb|KCl-PbCl2¦¦KCl-PbCl2|Pb-(Sb-Bi(+ was used. The obtained concentration dependences of the galvanic cell EMF are described by linear equations. The lead activity in the ternary liquid-metal alloy demonstrates insignificant negative deviations from the behavior of ideal solutions.

  13. Smulkaus ir vidutinio verslo konkurencingumas Lietuvoje

    OpenAIRE

    Vijeikis, Juozas; Makštutis, Antanas

    2009-01-01

    Straipsnio mokslinė problema, naujumas ir aktualumas. Konkurencingumas kaip įmonių efektyvios veiklos reiškinys yra aktualus šalies verslo gyvenime vykdant darnios ekonominės plėtros politiką. Ši politika kaip problema smulkaus ir vidutinio verslo (SVV) plėtrai ir konkurencingumui didinti nėra sistemiškai ištirta ir aprašyta Lietuvos sąlygomis mokslinėje ir praktinėje literatūroje. Vienas svarbiausių veiksnių, siekiant spartaus ekonominio augimo, yra darnios verslininkystės plėtra Lietuvoje n...

  14. Optical and structural characterization of GaSb and Te-doped GaSb single crystals

    International Nuclear Information System (INIS)

    Tirado-Mejia, L.; Villada, J.A.; Rios, M. de los; Penafiel, J.A.; Fonthal, G.; Espinosa-Arbelaez, D.G.; Ariza-Calderon, H.; Rodriguez-Garcia, M.E.

    2008-01-01

    Optical and structural properties of GaSb and Te-doped GaSb single crystals are reported herein. Utilizing the photoreflectance technique, the band gap energy for doped samples was obtained at 0.814 eV. Photoluminescence (PL) spectra showed a peak at 0.748 eV that according to this research, belongs to electronic states of pure GaSb and not to the longitudinal optical (LO) phonon replica as has been reported by other authors. Analysis of the full width at half maximum (FWHM) values of X-ray diffraction, as well as micro-Raman peaks showed that the inclusion of Te decreases the crystalline quality

  15. Uncooled High-Performance InAsSb Focal Plane Arrays, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — SVT Associates proposes an innovative digital alloy technique to extend the cutoff wavelength of InAsSb beyond 5 um, a wider band gap InAlAsSb layer inserted into...

  16. AEMnSb2 (AE=Sr, Ba): a new class of Dirac materials

    International Nuclear Information System (INIS)

    Farhan, M Arshad; Lee, Geunsik; Shim, Ji Hoon

    2014-01-01

    The Dirac fermions of Sb square net in AEMnSb 2 (AE=Sr, Ba) are investigated by using first-principles calculation. BaMnSb 2 contains Sb square net layers with a coincident stacking of Ba atoms, exhibiting Dirac fermion behavior. On the other hand, SrMnSb 2 has a staggered stacking of Sr atoms with distorted zig-zag chains of Sb atoms. Application of hydrostatic pressure on the latter induces a structural change from a staggered to a coincident arrangement of AE ions accompanying a transition from insulator to a metal containing Dirac fermions. The structural investigations show that the stacking type of cation and orthorhombic distortion of Sb layers are the main factors to decide the crystal symmetry of the material. We propose that the Dirac fermions can be obtained by controlling the size of cation and the volume of AEMnSb 2 compounds. (fast track communication)

  17. Raman spectra of the system TeCl4-SbCl5

    International Nuclear Information System (INIS)

    Brockner, W.; Demiray, A.F.

    1980-01-01

    Raman spectra of the solid and molten TeCl 4 . SbCl 5 addition compound and of some TeCl 4 -SbCl 5 mixtures have been recorded. Two modifications of the crystalline TeCl 4 -SbCl 5 compound have been found. The structure of the melt can be described by the equilibrium TeCl 3 + + SbCl 6 - reversible TeCl 4 + SbCl 5 lying on the left side. Mixtures with other stoichiometry contain the 1:1 adduct only and excess TeCl 4 or SbCl 5 , respectively. Such melts are built up by the ionic species TeCl 3 + and SbCl 6 - also and TeCl 4 or SbCl 5 according to stoichiometry. (author)

  18. Tarptautinio turizmo raida ir vystymo prognozės Lietuvoje ir Lenkijoje

    OpenAIRE

    Veličkaitė, Dalia

    2009-01-01

    Išanalizuota ir įvertinta Lietuvos ir Lenkijos atvykstamojo turizmo raida 2000- 2007m., užsienio turistų srautai, apgyvendinimo paslaugų paklausa, turistų tikslai ir kelionių transporto pasirinkimas, turistų išlaidos ir šalių turizmo pajamos, iškeltos atvykstamojo turizmo problemos bei pateikti jų sprendimo siūlymai.paskutinėje darbo dalyje buvo atliktos 2008- 2015metų Lietuvos ir Lenkijos turizmo raidos prognozės. In the final master work Lithuanian and Poland arriving tourism development...

  19. Fate and chemical speciation of antimony (Sb) during uptake, translocation and storage by rye grass using XANES spectroscopy.

    Science.gov (United States)

    Ji, Ying; Sarret, Géraldine; Schulin, Rainer; Tandy, Susan

    2017-12-01

    Antimony (Sb) is a contaminant of increased prevalence in the environment, but there is little knowledge about the mechanisms of its uptake and translocation within plants. Here, we applied for the synchrotron based X-ray absorption near-edge structure (XANES) spectroscopy to analyze the speciation of Sb in roots and shoots of rye grass (Lolium perenne L. Calibra). Seedlings were grown in nutrient solutions to which either antimonite (Sb(III)), antimonate (Sb(V)) or trimethyl-Sb(V) (TMSb) were added. While exposure to Sb(III) led to around 100 times higher Sb accumulation in the roots than the other two treatments, there was no difference in total Sb in the shoots. Antimony taken up in the Sb(III) treatment was mainly found as Sb-thiol complexes (roots: >76% and shoots: 60%), suggesting detoxification reactions with compounds such as glutathione and phytochelatins. No reduction of accumulated Sb(V) was found in the roots, but half of the translocated Sb was reduced to Sb(III) in the Sb(V) treatment. Antimony accumulated in the TMSb treatment remained in the methylated form in the roots. By synchrotron based XANES spectroscopy, we were able to distinguish the major Sb compounds in plant tissue under different Sb treatments. The results help to understand the translocation and transformation of different Sb species in plants after uptake and provide information for risk assessment of plant growth in Sb contaminated soils. Copyright © 2017 Elsevier Ltd. All rights reserved.

  20. Effects of FeSb6 octahedral deformations on the electronic structure of LaFe4Sb12

    KAUST Repository

    Pulikkotil, Jiji Thomas Joseph

    2011-09-01

    First-principles density functional based electronic structure calculations are performed in order to clarify the influence of FeSb6 octahedral deformations on the structural and electronic structure properties of LaFe 4Sb12. Our results show that octahedral tiltings correlate with the band dispersions and, consequently, the band masses. While total energy variation points at an enhanced role of lattice anharmonicity, flat bands emerge from a redistribution of the electronic states. © 2011 Elsevier B.V. All rights reserved.

  1. Visualizing Infrared (IR) Spectroscopy with Computer Animation

    Science.gov (United States)

    Abrams, Charles B.; Fine, Leonard W.

    1996-01-01

    IR Tutor, an interactive, animated infrared (IR) spectroscopy tutorial has been developed for Macintosh and IBM-compatible computers. Using unique color animation, complicated vibrational modes can be introduced to beginning students. Rules governing the appearance of IR absorption bands become obvious because the vibrational modes can be visualized. Each peak in the IR spectrum is highlighted, and the animation of the corresponding normal mode can be shown. Students can study each spectrum stepwise, or click on any individual peak to see its assignment. Important regions of each spectrum can be expanded and spectra can be overlaid for comparison. An introduction to the theory of IR spectroscopy is included, making the program a complete instructional package. Our own success in using this software for teaching and research in both academic and industrial environments will be described. IR Tutor consists of three sections: (1) The 'Introduction' is a review of basic principles of spectroscopy. (2) 'Theory' begins with the classical model of a simple diatomic molecule and is expanded to include larger molecules by introducing normal modes and group frequencies. (3) 'Interpretation' is the heart of the tutorial. Thirteen IR spectra are analyzed in detail, covering the most important functional groups. This section features color animation of each normal mode, full interactivity, overlay of related spectra, and expansion of important regions. This section can also be used as a reference.

  2. Single step hydrothermal based synthesis of M(II)Sb2O6 (M = Cd ...

    Indian Academy of Sciences (India)

    characterized by powder X-ray diffraction, scanning electron microscopy, energy dispersive .... SEM images and EDAX analysis of (a) and (b) CdSb2O6 and (c) and (d) ZnSb2O6. ... The parent compound, ilmenite (NaSbO3) could degrade MB.

  3. Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

    NARCIS (Netherlands)

    Eising, Gert; Pauza, Andrew; Kooi, Bart J.

    The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

  4. Assessing Intellectual Functioning in Young Adolescents: How Do the WISC-IV and SB5 Compare?

    Science.gov (United States)

    Wilson, Kimberley; Gilmore, Linda

    2012-01-01

    The Wechsler Intelligence Scale for Children--Fourth Edition (WISC-IV) and the Stanford-Binet--Fifth Edition (SB5) are two of the most commonly used intelligence tests for children and adolescents. No comparative studies of the WISC-IV and SB5 have yet been published. In the current study the WISC-IV and SB5 were administered in counterbalanced…

  5. High spin polarization and the origin of unique ferromagnetic ground state in CuFeSb

    International Nuclear Information System (INIS)

    Sirohi, Anshu; Saha, Preetha; Gayen, Sirshendu; Gaurav, Abhishek; Jyotsna, Shubhra; Sheet, Goutam; Singh, Chandan K.; Kabir, Mukul; Thakur, Gohil S.; Haque, Zeba; Gupta, L. C.; Ganguli, Ashok K.

    2016-01-01

    CuFeSb is isostructural to the ferro-pnictide and chalcogenide superconductors and it is one of the few materials in the family that are known to stabilize in a ferromagnetic ground state. Majority of the members of this family are either superconductors or antiferromagnets. Therefore, CuFeSb may be used as an ideal source of spin polarized current in spin-transport devices involving pnictide and the chalcogenide superconductors. However, for that the Fermi surface of CuFeSb needs to be sufficiently spin polarized. In this paper we report direct measurement of transport spin polarization in CuFeSb by spin-resolved Andreev reflection spectroscopy. From a number of measurements using multiple superconducting tips we found that the intrinsic transport spin polarization in CuFeSb is high (∼47%). In order to understand the unique ground state of CuFeSb and the origin of large spin polarization at the Fermi level, we have evaluated the spin-polarized band structure of CuFeSb through first principles calculations. Apart from supporting the observed 47% transport spin polarization, such calculations also indicate that the Sb-Fe-Sb angles and the height of Sb from the Fe plane are strikingly different for CuFeSb than the equivalent parameters in other members of the same family thereby explaining the origin of the unique ground state of CuFeSb.

  6. High spin polarization and the origin of unique ferromagnetic ground state in CuFeSb

    Energy Technology Data Exchange (ETDEWEB)

    Sirohi, Anshu; Saha, Preetha; Gayen, Sirshendu; Gaurav, Abhishek; Jyotsna, Shubhra; Sheet, Goutam, E-mail: goutam@iisermohali.ac.in [Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli PO 140306 (India); Singh, Chandan K.; Kabir, Mukul [Department of Physics, Indian Institute of Science Education and Research, Pune 411008 (India); Thakur, Gohil S.; Haque, Zeba; Gupta, L. C. [Department of Chemistry, Indian Institute of Technology, New Delhi 110016 (India); Ganguli, Ashok K. [Department of Chemistry, Indian Institute of Technology, New Delhi 110016 (India); Institute of Nano Science & Technology, Mohali 160064 (India)

    2016-06-13

    CuFeSb is isostructural to the ferro-pnictide and chalcogenide superconductors and it is one of the few materials in the family that are known to stabilize in a ferromagnetic ground state. Majority of the members of this family are either superconductors or antiferromagnets. Therefore, CuFeSb may be used as an ideal source of spin polarized current in spin-transport devices involving pnictide and the chalcogenide superconductors. However, for that the Fermi surface of CuFeSb needs to be sufficiently spin polarized. In this paper we report direct measurement of transport spin polarization in CuFeSb by spin-resolved Andreev reflection spectroscopy. From a number of measurements using multiple superconducting tips we found that the intrinsic transport spin polarization in CuFeSb is high (∼47%). In order to understand the unique ground state of CuFeSb and the origin of large spin polarization at the Fermi level, we have evaluated the spin-polarized band structure of CuFeSb through first principles calculations. Apart from supporting the observed 47% transport spin polarization, such calculations also indicate that the Sb-Fe-Sb angles and the height of Sb from the Fe plane are strikingly different for CuFeSb than the equivalent parameters in other members of the same family thereby explaining the origin of the unique ground state of CuFeSb.

  7. Optical characteristics of crystalline antimony sulphide (Sb 2 S 3 ...

    African Journals Online (AJOL)

    This paper presents the important optical characteristics of crystalline Sb2S3 film deposited on glass substrate using solution growth technique at 300k. These characteristics were analyzed using PYEUNICAM SP8-100 spectrophotometer in the range of UV-VIS-NIR while the morphology and the structural composition were ...

  8. Experimental Study of the Sb-Sn-Zn Alloy System

    Czech Academy of Sciences Publication Activity Database

    Zobač, O.; Sopoušek, J.; Buršík, Jiří; Zemanová, Adéla; Roupcová, Pavla

    2014-01-01

    Roč. 45, č. 3 (2014), s. 1181-1188 ISSN 1073-5623 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : Sb-Sn-Zn system * thermal analysis * CALPHAD method Subject RIV: BJ - Thermodynamics Impact factor: 1.730, year: 2014

  9. Resonant photoemission study of CeRu4Sb12

    International Nuclear Information System (INIS)

    Ishii, Hiroyoshi; Miyahara, Tsuneaki; Takayama, Yasuhiro; Shiozawa, Hidetsugu; Obu, Kenji; Matsuda, Tatsuma D.; Aoki, Yuji; Sugawara, Hitoshi; Sato, Hideyuki

    2005-01-01

    We have measured the Ce 4d-4f and Ce 3d-4f resonant photoemission spectra of CeRu 4 Sb 12 . The Ce 4f spectra show the spectral features corresponding to a weakly hybridized system. The number of 4f electrons is estimated to be ∼1.0

  10. Draft Genome Sequence of Corynebacterium kefirresidentii SB, Isolated from Kefir.

    Science.gov (United States)

    Blasche, Sonja; Kim, Yongkyu; Patil, Kiran R

    2017-09-14

    The genus Corynebacterium includes Gram-positive species with a high G+C content. We report here a novel species, Corynebacterium kefirresidentii SB, isolated from kefir grains collected in Germany. Its draft genome sequence was remarkably dissimilar (average nucleotide identity, 76.54%) to those of other Corynebacterium spp., confirming that this is a unique novel species. Copyright © 2017 Blasche et al.

  11. Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs.sub.1-x./sub.Sb.sub.x./sub./AlSb deep quantum well

    Czech Academy of Sciences Publication Activity Database

    Mikhailova, M. P.; Ivanov, E.V.; Danilov, L.V.; Petukhov, A.A.; Kalinina, K.V.; Slobozhanyuk, S.I.; Zegrya, G.G.; Stoyanov, N. D.; Yakovlev, Yu. P.; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Zíková, Markéta; Hulicius, Eduard

    2014-01-01

    Roč. 115, č. 22 (2014), "223102-1"-"223102-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S Institutional support: RVO:68378271 Keywords : MOVPE * GaSb * InAs * electroluminescence * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

  12. Commensurate-commensurate magnetic phase transitions in CeSb

    DEFF Research Database (Denmark)

    Lebech, Bente; Broholm, C.; Clausen, K.

    1986-01-01

    The q=2/3 to q=4/7 commensurate-commensurate phase transition in CeSb has been studied by neutron diffraction. On cooling the commensurate wave vector q changes abruptly from 2/3 to a higher-order commensurate value (≈14/23) at T1

  13. Triplet superconductivity in PrOs4Sb12

    International Nuclear Information System (INIS)

    Maki, K.; Won, H.; Parker, David; Haas, Stephan; Izawa, K.; Matsuda, Y.

    2005-01-01

    Here we propose spin triplet superconductors for the A- and B-phase in PrOs 4 Sb 12 . The present model describes consistently the thermal conductivity κ zz data obtained by Izawa et al. for T>=150mK

  14. Programming biological models in Python using PySB.

    Science.gov (United States)

    Lopez, Carlos F; Muhlich, Jeremy L; Bachman, John A; Sorger, Peter K

    2013-01-01

    Mathematical equations are fundamental to modeling biological networks, but as networks get large and revisions frequent, it becomes difficult to manage equations directly or to combine previously developed models. Multiple simultaneous efforts to create graphical standards, rule-based languages, and integrated software workbenches aim to simplify biological modeling but none fully meets the need for transparent, extensible, and reusable models. In this paper we describe PySB, an approach in which models are not only created using programs, they are programs. PySB draws on programmatic modeling concepts from little b and ProMot, the rule-based languages BioNetGen and Kappa and the growing library of Python numerical tools. Central to PySB is a library of macros encoding familiar biochemical actions such as binding, catalysis, and polymerization, making it possible to use a high-level, action-oriented vocabulary to construct detailed models. As Python programs, PySB models leverage tools and practices from the open-source software community, substantially advancing our ability to distribute and manage the work of testing biochemical hypotheses. We illustrate these ideas using new and previously published models of apoptosis.

  15. Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

    2017-06-30

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

  16. Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

    International Nuclear Information System (INIS)

    Ahmed, Aziz; Han, Seungwoo

    2017-01-01

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

  17. Vartotojų lojalumas : formavimas ir valdymas

    OpenAIRE

    Zikienė, Kristina

    2010-01-01

    Vienas iš esminių daugelio organizacijų tikslų, garantuojančių tolesnį sėkmingą konkuravimą nuolat besikeičiančiame verslo pasaulyje, yra vartotojų lojalumo įgijimas ir išlaikymas. Įvairios lojalumo formavimo ir valdymo problemos plačiai ir detaliai analizuojamos šioje mokomojoje knygoje. Knyga pradedama vartotojų lojalumo analize marketingo mokslo raidos kontekste. Tolesnis dėmesys skiriamas vartotojų lojalumo vadybinio aspekto analizei, atskleidžiant vartotojų lojalumo koncepcijos teorines ...

  18. The TApIR experiment. IR absorption spectra of liquid hydrogen isotopologues; Das TApIR Experiment IR-Absorptionsspektren fluessiger Wasserstoffisotopologe

    Energy Technology Data Exchange (ETDEWEB)

    Groessle, Robin

    2015-11-27

    The scope of the thesis is the infrared absorption spectroscopy of liquid hydrogen isotopologues with the tritium absorption infrared spectroscopy (TApIR) experiment at the tritium laboratory Karlsruhe (TLK). The calibration process from the sample preparation to the reference measurements are described. A further issue is the classical evaluation of FTIR absorption spectra and the extension using the rolling circle filter (RCF) including the effects on statistical and systematical errors. The impact of thermal and nuclear spin temperature on the IR absorption spectra is discussed. An empirical based modeling for the IR absorption spectra of liquid hydrogen isotopologues is performed.

  19. Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

    Science.gov (United States)

    Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay

    2014-12-01

    We report the synthesis of thermoelectric compounds, Cu3SbSe3 and Cu3SbSe4, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu3SbSe4 exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu3SbSe3, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu3SbSe4 was found to be ˜1.2 as compared to 0.2 V-1 for Cu3SbSe3 at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

  20. Sb(III)-Imprinted Organic-Inorganic Hybrid Sorbent Prepared by Hydrothermal-Assisted Surface Imprinting Technique for Selective Adsorption of Sb(III)

    Science.gov (United States)

    Zhang, Dan; Zhao, Yue; Xu, Hong-Bo

    2018-03-01

    Sb(III)-imprinted organic-inorganic hybrid sorbent was prepared by hydrothermal-assisted surface imprinting technique and was characterized by Fourier transform infrared spectroscopy, scanning electron microscopy coupled to an energy dispersive spectrometer and N2 adsorption/desorption isotherms. Hydrothermal-assisted process can improve the selectivity of the Sb(III)-imprinted hybrid sorbent for Sb(III) due to stable control of temperature and pressure. The Sb(III)-imprinted hybrid sorbent IIS indicated higher selectivity for Sb(III), had high static adsorption capacity of 37.3 mg g-1 for Sb(III), displayed stable adsorption capacity in pH range from 4 to 8, reached an rapid adsorption equilibrium within 30 min. According to the correlation coefficient ( r 2 > 0.99), the experimental data fitted better the pseudo-second-order kinetic model and Langmuir equilibrium isotherm.

  1. A 121Sb Moessbauer Study of the Chemical State of Antimony in V-Sb-O Mixed-Oxide Catalysts for the Ammoxidation of Propane

    International Nuclear Information System (INIS)

    Stievano, L.; Wagner, F. E.; Zanthoff, H. W.; Calogero, S.

    2002-01-01

    The structural changes of two representative samples of a group of V-Sb-oxide catalysts, a vanadium-rich and an antimony-rich specimen, are investigated by 121 Sb Moessbauer spectroscopy after treatment under propene or hydrogen at 673 K. The as-prepared catalysts contain both Sb(V) and Sb(III) as crystalline and microcrystalline α-Sb 2 O 4 and VSbO 4 , as well as an additional amorphous V 5+ oxide phase. The oxidation state of antimony does not change upon exposure to propene, whereas a partial reduction can be obtained by a more intense reduction under hydrogen. The Moessbauer results indicate that the antimony in VSbO 4 can be reduced more easily than that in α-Sb 2 O 4 , which appears to be more stable. These results are discussed in view of the observed depletion of vanadium at the surface of the catalyst particles under reaction conditions.

  2. Interface between Sn-Sb-Cu solder and copper substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sebo, P., E-mail: Pavel.Sebo@savba.sk [Institute of Materials and Machine Mechanics, Slovak Academy of Sciences, Racianska 75, 831 02 Bratislava 3 (Slovakia); Svec, P. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Faculty of Materials Science and Technology, Slovak University of Technology, J. Bottu 25, 917 24 Trnava (Slovakia); Janickovic, D.; Illekova, E. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Plevachuk, Yu. [Ivan Franko National University, Department of Metal Physics, 79005 Lviv (Ukraine)

    2011-07-15

    Highlights: {yields} New lead-free solder materials based on Sn-Sb-Cu were designed and prepared. {yields} Melting and solidification temperatures of the solders have been determined. {yields} Cu-substrate/solder interaction has been analyzed and quantified. {yields} Phases formed at the solder-substrate interface have been identified. {yields} Composition and soldering atmospheres were correlated with joint strength. - Abstract: Influence of antimony and copper in Sn-Sb-Cu solder on the melting and solidification temperatures and on the microstructure of the interface between the solder and copper substrate after wetting the substrate at 623 K for 1800 s were studied. Microstructure of the interface between the solder and copper substrates in Cu-solder-Cu joints prepared at the same temperature for 1800 s was observed and shear strength of the joints was measured. Influence of the atmosphere - air with the flux and deoxidising N{sub 2} + 10H{sub 2} gas - was taken into account. Thermal stability and microstructure were studied by differential scanning calorimetry (DSC), light microscopy, scanning electron microscopy (SEM) with energy-dispersive spectrometry (EDS) and X-ray diffraction (XRD). Melting and solidification temperatures of the solders were determined. An interfacial transition zone was formed by diffusion reaction between solid copper and liquid solder. At the interface Cu{sub 3}Sn and Cu{sub 6}Sn{sub 5} phases arise. Cu{sub 3}Sn is adjacent to the Cu substrate and its thickness decreases with increasing the amount of copper in solder. Scallop Cu{sub 6}Sn{sub 5} phase is formed also inside the solder drop. The solid solution Sn(Sb) and SbSn phase compose the interior of the solder drop. Shear strength of the joints measured by push-off method decreases with increasing Sb concentration. Copper in the solder shows even bigger negative effect on the strength.

  3. PKCδ-mediated IRS-1 Ser24 phosphorylation negatively regulates IRS-1 function

    International Nuclear Information System (INIS)

    Greene, Michael W.; Ruhoff, Mary S.; Roth, Richard A.; Kim, Jeong-a; Quon, Michael J.; Krause, Jean A.

    2006-01-01

    The IRS-1 PH and PTB domains are essential for insulin-stimulated IRS-1 Tyr phosphorylation and insulin signaling, while Ser/Thr phosphorylation of IRS-1 disrupts these signaling events. To investigate consensus PKC phosphorylation sites in the PH-PTB domains of human IRS-1, we changed Ser24, Ser58, and Thr191 to Ala (3A) or Glu (3E), to block or mimic phosphorylation, respectively. The 3A mutant abrogated the inhibitory effect of PKCδ on insulin-stimulated IRS-1 Tyr phosphorylation, while reductions in insulin-stimulated IRS-1 Tyr phosphorylation, cellular proliferation, and Akt activation were observed with the 3E mutant. When single Glu mutants were tested, the Ser24 to Glu mutant had the greatest inhibitory effect on insulin-stimulated IRS-1 Tyr phosphorylation. PKCδ-mediated IRS-1 Ser24 phosphorylation was confirmed in cells with PKCδ catalytic domain mutants and by an RNAi method. Mechanistic studies revealed that IRS-1 with Ala and Glu point mutations at Ser24 impaired phosphatidylinositol-4,5-bisphosphate binding. In summary, our data are consistent with the hypothesis that Ser24 is a negative regulatory phosphorylation site in IRS-1

  4. Complexation of HSA with different forms of antimony (Sb): An application of fluorescence spectroscopy

    International Nuclear Information System (INIS)

    Song, Wenjuan; Zhang, Daoyong; Pan, Xiangliang; Lee, Duu-Jong

    2013-01-01

    Antimony (Sb) pollution has been of a great environmental concern in some areas in China. Sb enters human body via drinking water, inhalation and food chain, unavoidably interacts with human serum albumin (HSA) in blood plasma, and consequently does harm to human health. The harmful effects of Sb on human health depend on the Sb species and their binding ability to HSA. In the present study, binding of three forms of Sb with HSA was investigated by excitation-emission matrix (EEM) spectroscopy. All of antimony potassium tartrate, antimony trichloride and potassium pyroantimonate quenched fluorescence of HSA. Values of conditional stability constant K a (×10 5 /M) for Sb and HSA systems were 8.13–9.12 for antimony potassium tartrate, 2.51–4.27 for antimony trichloride and 3.63–9.77 for potassium pyroantimonate. The binding constant K b (×10 4 /M) values of HSA with antimony potassium tartrate, antimony trichloride and potassium pyroantimonate were 0.02–0.07, 3.55–5.01, and 0.07–1.08, respectively. There was one independent class of binding site for antimony trichloride towards HSA. There was more than one Sb binding site and negative cooperativity between multiple binding sites for potassium pyroantimonate and antimony potassium tartrate towards HSA. The binding ability of HSA to complex Sb followed the order: antimony trichloride>potassium pyroantimonate>antimony potassium tartrate. -- Highlights: ► The first study reporting interaction of Sb with HSA. ► Sb can effectively quench the fluorescence of HSA. ► The binding ability of HSA to Sb was dependent on the form of Sb. ► Binding differences indicate differences in toxicity of various forms Sb to human. ► HAS-Sb binding parameters are important for understanding toxicity of Sb

  5. Complexation of HSA with different forms of antimony (Sb): An application of fluorescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Song, Wenjuan [State Key Laboratory of Desert and Oasis Ecology, Xinjiang Institute of Ecology and Geography, Chinese Academy of Sciences, Urumqi 830011 (China); Zhang, Daoyong [State Key Laboratory of Environmental Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550002 (China); Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Pan, Xiangliang, E-mail: xlpan@ms.xjb.ac.cn [State Key Laboratory of Desert and Oasis Ecology, Xinjiang Institute of Ecology and Geography, Chinese Academy of Sciences, Urumqi 830011 (China); Lee, Duu-Jong [State Key Laboratory of Desert and Oasis Ecology, Xinjiang Institute of Ecology and Geography, Chinese Academy of Sciences, Urumqi 830011 (China); Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2013-04-15

    Antimony (Sb) pollution has been of a great environmental concern in some areas in China. Sb enters human body via drinking water, inhalation and food chain, unavoidably interacts with human serum albumin (HSA) in blood plasma, and consequently does harm to human health. The harmful effects of Sb on human health depend on the Sb species and their binding ability to HSA. In the present study, binding of three forms of Sb with HSA was investigated by excitation-emission matrix (EEM) spectroscopy. All of antimony potassium tartrate, antimony trichloride and potassium pyroantimonate quenched fluorescence of HSA. Values of conditional stability constant K{sub a} (×10{sup 5}/M) for Sb and HSA systems were 8.13–9.12 for antimony potassium tartrate, 2.51–4.27 for antimony trichloride and 3.63–9.77 for potassium pyroantimonate. The binding constant K{sub b} (×10{sup 4}/M) values of HSA with antimony potassium tartrate, antimony trichloride and potassium pyroantimonate were 0.02–0.07, 3.55–5.01, and 0.07–1.08, respectively. There was one independent class of binding site for antimony trichloride towards HSA. There was more than one Sb binding site and negative cooperativity between multiple binding sites for potassium pyroantimonate and antimony potassium tartrate towards HSA. The binding ability of HSA to complex Sb followed the order: antimony trichloride>potassium pyroantimonate>antimony potassium tartrate. -- Highlights: ► The first study reporting interaction of Sb with HSA. ► Sb can effectively quench the fluorescence of HSA. ► The binding ability of HSA to Sb was dependent on the form of Sb. ► Binding differences indicate differences in toxicity of various forms Sb to human. ► HAS-Sb binding parameters are important for understanding toxicity of Sb.

  6. Oral administration of the 5-HT6 receptor antagonists SB-357134 and SB-399885 improves memory formation in an autoshaping learning task.

    Science.gov (United States)

    Perez-García, Georgina; Meneses, Alfredo

    2005-07-01

    In this work we aimed to re-examine the 5-HT6 receptor role, by testing the selective antagonists SB-357134 (1-30 mg/kg p.o.) and SB-399885 (1-30 mg/kg p.o.) during memory consolidation of conditioned responses (CR%), in an autoshaping Pavlovian/instrumental learning task. Bioavailability, half-life and minimum effective dose to induce inappetence for SB-357134 were 65%, 3.4 h, and 30 mg/kg p.o., and for SB-399885 were 52%, 2.2 h, and 50 mg/kg p.o., respectively. Oral acute and chronic administration of either SB-357134 or SB-399885 improved memory consolidation compared to control groups. Acute administration of SB-357134, at 1, 3, 10 and 30 mg/kg, produced a CR% inverted-U curve, eliciting the latter dose a 7-fold increase relative to saline group. Acute injection of SB-399885 produced significant CR% increments, being 1 mg/kg the most effective dose. Repeated administration (7 days) of either SB-357134 (10 mg/kg) or SB-399885 (1 mg/kg) elicited the most significant CR% increments. Moreover, modeling the potential therapeutic benefits of 5-HT6 receptor blockade, acute or repeated administration of SB-399885, at 10 mg/kg reversed memory deficits produced by scopolamine or dizocilpine, and SB-357134 (3 and 10 mg/kg) prevented amnesia and even improved performance. These data support the notion that endogenously 5-HT acting, via 5-HT6 receptor, improves memory consolidation.

  7. Effect of Sb Segregation on Conductance and Catalytic Activity at Pt/Sb-Doped SnO2 Interface: A Synergetic Computational and Experimental Study

    DEFF Research Database (Denmark)

    Hu, Qiang; Colmenares Rausseo, Luis César; Martinez, Umberto

    2015-01-01

    a combined computational and experimental study. It was found that Sb-dopant atoms prefer to segregate toward the ATO/Pt interface. The deposited Pt catalysts, interestingly, not only promote Sb segregation, but also suppress the occurrence of Sb3+ species, a charge carrier neutralizer at the interface...... to support future applications of ATO/Pt-based materials as possible cathodes for PEMFC applications with enhanced durability under practical applications....

  8. Single-Longitudinal-Mode In-GaAsSb/AlGaAsSb Lasers for Gas Sensing

    International Nuclear Information System (INIS)

    Barrios, P.; Gupta, J.; Lapointe, J.; Aers, G.; Storey, C.

    2009-01-01

    Regrowth-free gain-coupled Ga Sb-based Dfb lasers suitable for gas sensing were fabricated. Threshold currents for 2.4μm emission of 400μm-long Dfb devices were 45mA with a total output power of nearly 11mW in C W operation at 20 o C. (Author)

  9. Laser irradiation and thermal treatment inducing selective crystallization in Sb2O3-Sb2S3 glassy films

    Science.gov (United States)

    Avila, L. F.; Pradel, A.; Ribeiro, S. J. L.; Messaddeq, Y.; Nalin, M.

    2015-02-01

    The influence of both thermal treatment and laser irradiation on the structural and optical properties of films in the Sb2O3-Sb2S3 system was investigated. The films were prepared by RF-sputtering using glass compositions as raw materials. Irreversible photodarkening effect was observed after exposure the films to a 458 nm solid state laser. It is shown, for the first time, the use of holographic technique to measure "in situ", simultaneously and independently, the phase and amplitude modulations in glassy films. The films were also photo-crystallized and analysed "in situ" using a laser coupled to a micro-Raman equipment. Results showed that Sb2S3 crystalline phase was obtained after irradiation. The effect of thermal annealing on the structure of the films was carried out. Different from the result obtained by irradiation, thermal annealing induces the crystallization of the Sb2O3 phase. Photo and thermal induced effects on films were studied using UV-Vis and Raman spectroscopy, atomic force microscopy (AFM), thermal analysis (DSC), X-ray diffraction, scanning electron microscopy (MEV) and energy-dispersive X-ray spectroscopy (EDX).

  10. New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

    Directory of Open Access Journals (Sweden)

    V. G. Ivanov

    2011-01-01

    Full Text Available The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.

  11. Activity uniformity of Ir-192 seeds

    International Nuclear Information System (INIS)

    Ling, C.C.; Gromadzki, Z.C.

    1981-01-01

    A simple device that uses materials and apparatus commonly available in a radiotherapy department has been designed, fabricated and used in routine quality control relative to the activity uniformity of clinical Ir-192 seeds in ribbons. Detailed evaluation indicated that this system is easy to use and can yield relative activity measurements of individual Ir-192 seeds accurate to within 2%. With this device, activity uniformity of commercial Ir-192 seeds from two manufacturers has been assessed. For the seven shipments of Ir-192 seeds studied, the root mean square variations of individual seed strength from the average of each shipment ranged from 3.4 to 7.1%. Variation in seed activity by more than +- 10% from the average is not uncommon

  12. Implementing GPS into Pave-IR.

    Science.gov (United States)

    2009-03-01

    To further enhance the capabilities of the Pave-IR thermal segregation detection system developed at the Texas Transportation Institute, researchers incorporated global positioning system (GPS) data collection into the thermal profiles. This GPS capa...

  13. Joint IAEA/NEA IRS guidelines

    International Nuclear Information System (INIS)

    1997-01-01

    The Incident Reporting System (IRS) is an international system jointly operated by the International Atomic Energy Agency (IAEA) and the Nuclear Energy Agency of the Organization for Economic Cooperation and Development (OECD/NEA). The fundamental objective of the IRS is to contribute to improving the safety of commercial nuclear power plants (NPPs) which are operated worldwide. This objective can be achieved by providing timely and detailed information on both technical and human factors related to events of safety significance which occur at these plants. The purpose of these guidelines, which supersede the previous IAEA Safety Series No. 93 (Part II) and the NEA IRS guidelines, is to describe the system and to give users the necessary background and guidance to enable them to produce IRS reports meeting a high standard of quality while retaining the high efficiency of the system expected by all Member States operating nuclear power plants

  14. Synthesis and crystal structure of Cd2SbBr2

    International Nuclear Information System (INIS)

    Reshetova, L.N.; Shevel'kov, A.V.; Popovkin, B.A.

    1999-01-01

    A new cadmium antimonidobromide, i.e. Cd 2 SbBr 2 , has been synthesized by the standard ampoule method. The compound is crystallized in monoclinic system of sp. gr. P2 1 :a=8.244 (1), b=9.920(1), c=8.492(1) A, Β=116.80(1) deg. Binuclear anions of Sb 2 4- (Sb-Sb 2.78 A), octahedrically surrounded by six cadmium atoms, are a basic specific feature of the structure. Octahedrons of Sb 2 Cd 6 , by collectivizing the equatorial vertices. form layers, the alternation mode of which is similar to the one described for cadmium and mercury arsenidochlorides

  15. In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix

    International Nuclear Information System (INIS)

    Semenov, A. N.; Lyublinskaya, O. G.; Solov’ev, V. A.; Mel’tser, B. Ya.; Ivanov, S. V.

    2008-01-01

    Formation of InSb quantum dots grown in an InAs matrix by molecular-beam epitaxy that does not involve forced deposition of InSb is studied. Detection of intensity oscillations in the reflection of high-energy electron diffraction patterns was used to study in situ the kinetics of the formation of InSb quantum dots and an InAsSb wetting layer. The effects of the substrate temperature, the shutter operation sequence, and the introduction of growth interruptions on the properties of the array of InSb quantum dots are examined. Introduction of a growth interruption immediately after completing the exposure of the InAs surface to the antimony flux leads to a reduction in the nominal thickness of InSb and to an enhancement in the uniformity of the quantum-dot array. It is shown that, in the case of deposition of submonolayer-thickness InSb/InAs quantum dots, the segregation layer of InAsSb plays the role of the wetting layer. The Sb segregation length and segregation ratio, as well as their temperature dependences, are determined.

  16. Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

    Science.gov (United States)

    Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

    2018-06-01

    Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.

  17. The formation mechanisms and optical characteristics of GaSb quantum rings

    International Nuclear Information System (INIS)

    Lin, Wei-Hsun; Pao, Chun-Wei; Wang, Kai-Wei; Liao, Yu-An; Lin, Shih-Yen

    2013-01-01

    The growth mechanisms and optical characteristics of GaSb quantum rings (QRs) are investigated. Although As-for-Sb exchange is the mechanism responsible for the dot-to-ring transition, significant height difference between GaSb quantum dots (QDs) and QRs in a dot/ring mixture sample suggests that the dot-to-ring transition is not a spontaneous procedure. Instead, it is a rapid transition procedure as long as it initiates. A model is established to explain this phenomenon. Larger ring inner diameters and heights of the sample with longer post Sb soaking time suggest that As-for-Sb exchange takes places in both vertical and lateral directions. The decreasing ring densities, enlarged ring inner/outer diameters and eventually flat GaSb surfaces observed with increasing growth temperatures are resulted from enhanced adatom migration and As-for-Sb exchange with increasing growth temperatures

  18. Structural transition of (InSb)n clusters at n = 6-10

    Science.gov (United States)

    Lu, Qi Liang; Luo, Qi Quan; Huang, Shou Guo; Li, Yi De

    2016-10-01

    An optimization strategy combining global semi-empirical quantum mechanical search with all-electron density functional theory was adopted to determine the lowest energy structure of (InSb)n clusters with n = 6-10. A new structural growth pattern of the clusters was observed. The lowest energy structures of (InSb)6 and (InSb)8 were different from that of previously reported results. Competition existed between core-shell and cage-like structures of (InSb)8. The structural transition of (InSb)n clusters occurred at size n = 8-9. For (InSb)9 and (InSb)10 clusters, core-shell structure were more energetically favorable than the cage. The corresponding electronic properties were investigated.

  19. Simultaneous removal of Cd(II) and Sb(V) by Fe–Mn binary oxide: Positive effects of Cd(II) on Sb(V) adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ruiping [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Liu, Feng [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Hu, Chengzhi, E-mail: czhu@rcees.ac.cn [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); He, Zan [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Liu, Huijuan; Qu, Jiuhui [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China)

    2015-12-30

    Highlights: • Fe–Mn binary oxide achieves the simultaneous removal of Cd(II) and Sb(V). • Cd(II) at above 0.25 mmol/L improves Sb(V) adsorption onto FMBO. • Cd(II) improves more significant Sb(V) adsorption than Ca{sup 2+} and Mn{sup 2+}. • Sb(V) adsorption decreases whereas Cd(II) adsorption increases with elevated pH. • The increased ζ-potential and Cd(II)–Sb(V) precipitation favors Sb(V) adsorption. - Abstract: The coexistence of cadmium ion (Cd(II)) and antimonate (Sb(V)) creates the need for their simultaneous removal. This study aims to investigate the effects of positively-charged Cd(II) on the removal of negative Sb(V) ions by Fe–Mn binary oxide (FMBO) and associated mechanisms. The maximum Sb(V) adsorption density (Q{sub max,Sb(V)}) increased from 1.02 to 1.32 and 2.01 mmol/g in the presence of Cd(II) at 0.25 and 0.50 mmol/L. Cd{sup 2+} exhibited a more significant positive effect than both calcium ion (Ca{sup 2+}) and manganese ion (Mn{sup 2+}). Cd{sup 2+} showed higher affinity towards FMBO and increased its ζ-potential more significantly compared to Ca{sup 2+} and Mn{sup 2+}. The simultaneous adsorption of Sb(V) and Cd(II) onto FMBO can be achieved over a wide initial pH (pH{sub i}) range from 2 to 9, and Q{sub Sb(V)} decreases whereas Q{sub Cd(II)} increases with elevated pH{sub i}. Their combined values, as expressed by Q{sub Sb(V)+Cd(II)}, amount to about 2 mmol/g and vary slightly in the pH{sub i} range 4–9. FTIR and XPS spectra indicate the significant synergistic effect of Cd(II) on Sb(V) adsorption onto FMBO, and that little chemical valence transformation occurs. These results may be valuable for the treatment of wastewater with coexisting heavy metals such as Cd(II) and Sb(V).

  20. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

    Science.gov (United States)

    Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

    2017-12-01

    Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

  1. Three-Dimensional Reduced Graphene Oxide Coupled with Mn3O4 for Highly Efficient Removal of Sb(III) and Sb(V) from Water.

    Science.gov (United States)

    Zou, Jian-Ping; Liu, Hui-Long; Luo, Jinming; Xing, Qiu-Ju; Du, Hong-Mei; Jiang, Xun-Heng; Luo, Xu-Biao; Luo, Sheng-Lian; Suib, Steven L

    2016-07-20

    Highly porous, three-dimensional (3D) nanostructured composite adsorbents of reduced graphene oxides/Mn3O4 (RGO/Mn3O4) were fabricated by a facile method of a combination of reflux condensation and solvothermal reactions and systemically characterized. The as-prepared RGO/Mn3O4 possesses a mesoporous 3D structure, in which Mn3O4 nanoparticles are uniformly deposited on the surface of the reduced graphene oxide. The adsorption properties of RGO/Mn3O4 to antimonite (Sb(III)) and antimonate (Sb(V)) were investigated using batch experiments of adsorption isotherms and kinetics. Experimental results show that the RGO/Mn3O4 composite has fast liquid transport and superior adsorption capacity toward antimony (Sb) species in comparison to six recent adsorbents reported in the literature and summarized in a table in this paper. Theoretical maximum adsorption capacities of RGO/Mn3O4 toward Sb(III) and Sb(V) are 151.84 and 105.50 mg/g, respectively, modeled by Langmuir isotherms. The application of RGO/Mn3O4 was demonstrated by using drinking water spiked with Sb (320 μg/L). Fixed-bed column adsorption experiments indicate that the effective breakthrough volumes were 859 and 633 mL bed volumes (BVs) for the Sb(III) and Sb(V), respectively, until the maximum contaminant level of 5 ppb was reached, which is below the maximum limits allowed in drinking water according to the most stringent regulations. The advantages of being nontoxic, highly stable, and resistant to acid and alkali and having high adsorption capacity toward Sb(III) and Sb(V) confirm the great potential application of RGO/Mn3O4 in Sb-spiked water treatment.

  2. New uranium chalcoantimonates, RbU{sub 2}SbS{sub 8} and KU{sub 2}SbSe{sub 8}, with a polar noncentrosymmetric structure

    Energy Technology Data Exchange (ETDEWEB)

    Choi, K S; Kanatzidis, M G

    1999-09-01

    The new compounds, RbU{sub 2}SbS{sub 8} and KU{sub 2}SbSe{sub 8}, were prepared as golden-black, blocklike crystals by the polychalcogenide molten flux method. RbU{sub 2}SbS{sub 8} has a two-dimensional character with layers running perpendicular to the c-axis. The coordination geometry around the U{sup 4+} atoms is best described as a bicapped trigonal prism. The trigonal prisms share triangular faces with neighboring prisms, forming one-dimensional columns along the a-axis. The columns are then joined to construct sheets by sharing capping S atoms. Sb{sup 3+} ions are sitting at the center of a slightly distorted seesaw coordination environment (CN = 4). Rb{sup +} ions are stabilized in 8-coordinate bicapped trigonal prismatic sites. KU{sub 2}SbSe{sub 8} has essentially the same structure as RbU{sub 2}SbS{sub 8}. However, Sb{sup 3+} and K{sup +} ions appear disordered in every other layer resulting in a different unit cell. RbU{sub 2}SbS{sub 8} is a semiconductor with a band gap of 1.38 eV. The band gap of KU{sub 2}SbSe{sub 8} could not be determined precisely due to the presence of overlapping intense f-f transitions in the region (0.5--1.1 eV). The Raman spectra show the disulfide stretching vibration in RbU{sub 2}SbS{sub 8} at 479 cm{sup {minus}1} and the diselenide stretching vibration in KU{sub 2}SbSe{sub 8} at 252 cm{sup {minus}1}. Magnetic susceptibility measurements indicate the presence of U{sup 4+} centers in the compounds. The compounds do not melt below 1,000 C under vacuum.

  3. Preparation of MnO2 electrodes coated by Sb-doped SnO2 and their effect on electrochemical performance for supercapacitor

    International Nuclear Information System (INIS)

    Zhang, Yuqing; Mo, Yan

    2014-01-01

    Highlights: • Sb-doped SnO 2 coated MnO 2 electrodes (SS-MnO 2 electrodes) are prepared. • The capacitive property and stability of SS-MnO 2 electrode is superior to uncoated MnO 2 electrode and SnO 2 coated MnO 2 electrode. • Sb-doped SnO 2 coating enhances electrochemical performance of MnO 2 effectively. • SS-MnO 2 electrodes are desirable to become a novel electrode material for supercapacitor. - Abstract: To enhance the specific capacity and cycling stability of manganese binoxide (MnO 2 ) for supercapacitor, antimony (Sb) doped tin dioxide (SnO 2 ) is coated on MnO 2 through a sol-gel method to prepare MnO 2 electrodes, enhancing the electrochemical performance of MnO 2 electrode in sodium sulfate electrolytes. The structure and composition of SS-MnO 2 electrode are characterized by using scanning electron microscope (SEM), transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR) and X-Ray diffraction spectroscopy (XRD). The electrochemical performances are evaluated and researched by galvanostatic charge-discharge test, cyclic voltammogram (CV) and electrochemical impedance spectroscopy (EIS). The results show that SS-MnO 2 electrodes hold porous structure, displaying superior cycling stability at large current work condition in charge-discharge tests and good capacity performance at high scanning rate in CV tests. The results of EIS show that SS-MnO 2 electrodes have small internal resistance. Therefore, the electrochemical performances of MnO 2 electrodes are enhanced effectively by Sb-doped SnO 2 coating

  4. Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory

    International Nuclear Information System (INIS)

    Zhang Ting; Song Zhitang; Liu Bo; Feng Songlin

    2008-01-01

    Te-free environmental friendly Si x Sb 100−x phase-change materials are investigated. The binary material, which is compatible with the complementary metal-oxide-semiconductor manufacturing process, is outstanding in various properties. Si x Sb 100−x shows a much better data retention as compared with Ge 2 Sb 2 Te 5 . The density change for Si 10 Sb 90 and Si 16 Sb 84 is only about 3% and 3.8%, respectively. The failure times for Si 10 Sb 90 and Si 16 Sb 84 are about 10 3 and 10 6 times longer than that of Ge 2 Sb 2 Te 5 at 110 °C. The crystallization temperature of Si x Sb 100−x increases with silicon content within the material. Si x Sb 100−x materials are good candidates for the phase-change memory applications

  5. Properties of the low-lying levels of 122Sb

    International Nuclear Information System (INIS)

    Gunsteren, W.F. van; Rabenstein, D.

    1977-01-01

    Nanosecond lifetimes of low-lying levels in the doubly odd nucleus 122 Sb have been measured. On the basis of these results and of already published experimental material, spins and parities for most of the low-lying states are proposed. A simple theoretical description of this nucleus is presented. The model used is that of a proton coupled to a number projected neutron quasiparticle wave function, assuming a Z=N=50 core. The spectrum and transition rates were calculated in a shell model space consisting of eight subshells and using a renormalized Schiffer interaction. The shell model parameters were derived from adjadent nuclei. Good agreement with the experimental level scheme is found. Also the gamma decay properties can be accounted for rather well. Spectroscopic factors for the one-neutron transfer reactions leading to 122 Sb are predicted. Their measurement with high resolution techniques would be a helpful test for the interpretations given. (orig.) [de

  6. Optical nonlinear absorption characteristics of Sb2Se3 nanoparticles

    Science.gov (United States)

    Muralikrishna, Molli; Kiran, Aditha Sai; Ravikanth, B.; Sowmendran, P.; Muthukumar, V. Sai; Venkataramaniah, Kamisetti

    2014-04-01

    In this work, we report for the first time, the nonlinear optical absorption properties of antimony selenide (Sb2Se3) nanoparticles synthesized through solvothermal route. X-ray diffraction results revealed the crystalline nature of the nanoparticles. Electron microscopy studies revealed that the nanoparticles are in the range of 10 - 40 nm. Elemental analysis was performed using EDAX. By employing open aperture z-scan technique, we have evaluated the effective two-photon absorption coefficient of Sb2Se3 nanoparticles to be 5e-10 m/W at 532 nm. These nanoparticles exhibit strong intensity dependent nonlinear optical absorption and hence could be considered to have optical power limiting applications in the visible range.

  7. GeSbTe deposition for the PRAM application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Junghyun [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Choi, Sangjoon [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Lee, Changsoo [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Kang, Yoonho [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Kim, Daeil [School of Materials Science and Engineering. University of Ulsan, San 29, Mugeo-Dong, Nam-Gu, Ulsan 680-749 (Korea, Republic of)]. E-mail: dkim84@mail.ulsan.ac.kr

    2007-02-15

    GeSbTe (GST) chalcogenide thin films for the phase-change random access memory (PRAM) were deposited by an atomic layer deposition (ALD) process. New precursors for GST thin films made with an ALD process were synthesized. Among the synthesized precursors, Ge(N(CH{sub 3}){sub 2}){sub 4}, Sb(N(CH{sub 3}){sub 2}){sub 4}, and Te(i-Pr){sub 2} (i-Pr = iso-propyl) were selected. Using the above precursors, GST thin films were deposited using an H{sub 2} plasma-assisted ALD process. Film resistivity abruptly changed after an N{sub 2} annealing process above a temperature of 350 deg. C. Cross-sectional scanning electron microscope (SEM) photographs of the GST films on the patterned substrate with aspect ratio of 7 shows that the step coverage is about 90%.

  8. Microalloying with Cd of Antifriction Sn-Sb-Cu Alloys

    Directory of Open Access Journals (Sweden)

    Cinca Ionel Lupinca

    2012-09-01

    Full Text Available In the case of bimetallic sliding linings with superior technological characteristics, the use of an antifriction ally is imposed an alloy of the type Sn-Sb-Cu, which possesses a high adherence to the steel stand and a high durability in exploitation. For this reason we use the microalloying of the antifriction alloy with cadmium. The microalloying with Cd of antifriction alloys Sn-Sb-Cu determines an increase of the adhesion property of the antifriction alloy on the steel stand. The steel stand is previously subjected to a process of degreasing with ZnCl2 and washing so that is can later be subjected to a thermal-chemical treatment of tinning.

  9. Defect-induced magnetic structure of CuMnSb

    Czech Academy of Sciences Publication Activity Database

    Máca, František; Kudrnovský, Josef; Drchal, Václav; Turek, I.; Stelmakhovych, O.; Beran, Přemysl; Llobet, A.; Martí, Xavier

    2016-01-01

    Roč. 94, č. 9 (2016), 1-9, č. článku 094407. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 ; RVO:61389005 Keywords : CuMnSb * electronic structure * defects * magnetic order * ab initio calculations * neutron diffraction analysis Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  10. Magneto-optical effect in Mn-Sb thin films

    International Nuclear Information System (INIS)

    Attaran, E.; Sadabadi, M.

    2003-01-01

    The magneto-optic Kerr and Faraday effect of Mn-Sb thin films have been studied. The single and multilayer of this film have grown on glass substrate by evaporation. The optical rotation of linear polarized light has been measured by an optical hysteresis plotter in a I/O converter amplifier circuit. Our results indicate a polar Kerr rotation up to 0.5 degree and in a double Mn S b this rotation research to maximum

  11. Temperature Variation of the Magnetic Structure of HoSb

    DEFF Research Database (Denmark)

    Andersen, Nils Axel; Kjems, Jørgen; Vogt, O.

    1980-01-01

    Neutron diffraction has been used to show that the magnetic moment vector in the antiferromagnet HoSb changes direction as a function of temperature below TN=5.7K. The experimental results are in qualitative agreement with a recent theoretical prediction by Jensen et al. (1980) which ascribe the ...... the changing directions to a competition between the crystal fields and the dipolar interactions....

  12. Approaching the Hole Mobility Limit of GaSb Nanowires.

    Science.gov (United States)

    Yang, Zai-xing; Yip, SenPo; Li, Dapan; Han, Ning; Dong, Guofa; Liang, Xiaoguang; Shu, Lei; Hung, Tak Fu; Mo, Xiaoliang; Ho, Johnny C

    2015-09-22

    In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin and uniform nanowires (NWs), there is limited report until now addressing their diameter-dependent properties and their hole mobility limit in this important one-dimensional material system, where all these are essential information for the deployment of GaSb NWs in various applications. Here, by employing the newly developed surfactant-assisted chemical vapor deposition, high-quality and uniform GaSb NWs with controllable diameters, spanning from 16 to 70 nm, are successfully prepared, enabling the direct assessment of their growth orientation and hole mobility as a function of diameter while elucidating the role of sulfur surfactant and the interplay between surface and interface energies of NWs on their electrical properties. The sulfur passivation is found to efficiently stabilize the high-energy NW sidewalls of (111) and (311) in order to yield the thin NWs (i.e., 40 nm in diameters) would grow along the most energy-favorable close-packed planes with the orientation of ⟨111⟩, supported by the approximate atomic models. Importantly, through the reliable control of sulfur passivation, growth orientation and surface roughness, GaSb NWs with the peak hole mobility of ∼400 cm(2)V s(-1) for the diameter of 48 nm, approaching the theoretical limit under the hole concentration of ∼2.2 × 10(18) cm(-3), can be achieved for the first time. All these indicate their promising potency for utilizations in different technological domains.

  13. Thermoelectric nanocrystalline YbCoSb laser prepared layers

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Zeipl, Radek; Kocourek, Tomáš; Remsa, Jan; Navrátil, Jiří

    2016-01-01

    Roč. 122, č. 3 (2016), s. 1-5, č. článku 155. ISSN 0947-8396 R&D Projects: GA ČR(CZ) GA13-33056S Institutional support: RVO:68378271 ; RVO:61389013 Keywords : nanocrystalline YbCoSb * thermoelectric layers * pulsed laser deposition Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UMCH-V) Impact factor: 1.455, year: 2016

  14. Thermoelectric properties of RuSb2Te ternary skutterudites

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Jiří; Plecháček, T.; Drašar, Č.; Laufek, F.

    2013-01-01

    Roč. 42, č. 7 (2013), s. 1864-1869 ISSN 0361-5235 R&D Projects: GA ČR GAP108/10/1315 Institutional support: RVO:61389013 Keywords : RuSb2Te * ternary skutterudite * doping Subject RIV: CA - Inorganic Chemistry Impact factor: 1.675, year: 2013 http://link.springer.com/article/10.1007/s11664-012-2451-5

  15. Iridium Interfacial Stack - IrIS

    Science.gov (United States)

    Spry, David

    2012-01-01

    Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the Si

  16. High-spin, multiparticle isomers in 121,123Sb

    International Nuclear Information System (INIS)

    Jones, G. A.; Walker, P. M.; Podolyak, Zs.; Cullen, I. J.; Garnsworthy, A. B.; Liu, Z.; Thompson, N. J.; Williams, S. J.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Khoo, T. L.; Seweryniak, D.; Carroll, J. J.; Chakrawarthy, R. S.; Hackman, G.; Chowdhury, P.; Dracoulis, G. D.; Lane, G. J.; Kondev, F. G.

    2008-01-01

    Isomers in near-spherical Z=51, antimony isotopes are reported here for the first time using fusion-fission reactions between 27 Al and a pulsed 178 Hf beam of energy, 1150 MeV. γ rays were observed from the decay of isomeric states with half-lives, T 1/2 =200(30) and 52(3)μs, and angular momenta I=((25/2)) and I π =(23/2) + , in 121,123 Sb, respectively. These states are proposed to correspond to ν(h (11/2) ) 2 configurations, coupled to an odd d (5/2) or g (7/2) proton. Nanosecond isomers were also identified at I π =(19/2) - [T 1/2 =8.5(5) ns] in 121 Sb and I π =((15/2) - ) [T 1/2 =37(4) ns] in 123 Sb. Information on spins and parities of states in these nuclei was obtained using a combination of angular correlation and intensity-balance measurements. The configurations of states in these nuclei are discussed using a combination of spin/energy systematics and shell-model calculations for neighboring tin isotones and antimony isotopes

  17. Grain boundary engineering with nano-scale InSb producing high performance InxCeyCo4Sb12+z skutterudite thermoelectrics

    Directory of Open Access Journals (Sweden)

    Han Li

    2017-12-01

    Full Text Available Thermoelectric semiconductors based on CoSb3 hold the best promise for recovering industrial or automotive waste heat because of their high efficiency and relatively abundant, lead-free constituent elements. However, higher efficiency is needed before thermoelectrics reach economic viability for widespread use. In this study, n-type InxCeyCo4Sb12+z skutterudites with high thermoelectric performance are produced by combining several phonon scattering mechanisms in a panoscopic synthesis. Using melt spinning followed by spark plasma sintering (MS-SPS, bulk InxCeyCo4Sb12+z alloys are formed with grain boundaries decorated with nano-phase of InSb. The skutterudite matrix has grains on a scale of 100–200 nm and the InSb nano-phase with a typical size of 5–15 nm is evenly dispersed at the grain boundaries of the skutterudite matrix. Coupled with the presence of defects on the Sb sublattice, this multi-scale nanometer structure is exceptionally effective in scattering phonons and, therefore, InxCeyCo4Sb12/InSb nano-composites have very low lattice thermal conductivity and high zT values reaching in excess of 1.5 at 800 K.

  18. Suppression of superconductivity in Nb by IrMn in IrMn/Nb bilayers

    KAUST Repository

    Wu, B. L.; Yang, Y. M.; Guo, Z. B.; Wu, Y. H.; Qiu, J. J.

    2013-01-01

    Effect of antiferromagnet on superconductivity has been investigated in IrMn/Nb bilayers. Significant suppression of both transition temperature (Tc) and lower critical field (Hc1) of Nb is found in IrMn/Nb bilayers as compared to a single layer Nb

  19. Single-nucleotide polymorphism of INS, INSR, IRS1, IRS2, PPAR-G ...

    Indian Academy of Sciences (India)

    2017-03-02

    Mar 2, 2017 ... Abstract. Polycystic ovary syndrome (PCOS) is the most common and a complex female endocrine disorder, and is one of the leading cause of female infertility. Here, we aimed to investigate the association of single-nucleotide polymorphism of INS, INSR,. IRS1, IRS2, PPAR-G and CAPN10 gene in the ...

  20. Synthesis, characterization and photovoltaic properties of Mn-doped Sb2S3 thin film

    Directory of Open Access Journals (Sweden)

    Horoz Sabit

    2018-03-01

    Full Text Available Synthesis and characterization of Mn-doped Sb2S3 thin films (TFs prepared by chemical bath deposition (CBD at room temperature have been documented and their structural, optical, morphological, magnetic and photovoltaic properties have been examined for the first time. Their structural properties reveal that the Mn-doped Sb2S3 TF has an orthorhombic phase structure of Sb2S3, and that the grain size of the Mn-doped Sb2S3 TF (72.9 nm becomes larger than that of undoped Sb2S3 TF (69.3 nm. It has been observed that Mn content causes the Sb2S3 TF band gap to decrease. This situation clearly correlates with band tailing due to the impurities that are involved. The morphological properties have revealed that the shape of the Mn-doped Sb2S3 TF is more uniform than the shape of its undoped counterpart. The study on its magnetic properties has demonstrated that the Mn-doped Sb2S3 TF exhibits paramagnetic behavior. Its paramagnetic Curie-Weiss temperature was found to be -4.1 K. This result suggests that there is an anti-ferromagnetic interaction between Mn moments in the Mn-doped Sb2S3 TF. Incident photon to electron conversion efficiency (IPCE and J-V measurements were also carried out for the Mn-doped Sb2S3 TF for the first time. The results have indicated that the Mn-doped Sb2S3 TF can be utilized as a sensitizer to improve the performance of solar cells. Another important observation on the photovoltaic properties of Mn-doped Sb2S3 TF is that the spectral response range is wider than that of undoped Sb2S3 TF. Our study suggests that the introduction of dopant could serve as an effective means of improving the device performance of solar cells.

  1. Structure and Chemical Bond of Thermoelectric Ce-Co-Sb Skutterudites

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The correlations among composition,structure,chemical bond and thermoelectric property of skutterudites CoSb3 and CeCo5Fe3Sb12 have been studied by using density function and discrete variation (DFT-DVM) method.Three models for this study were proposed and calculated by which the "rattling" pattern was described.Model 1 is with Ce in the center,model 2 is with Ce away the center and near to Sb,and model 3 is also with Ce away the center but near to Fe.The calculated results show that in model 3,the ionic bond is the strongest,but the covalent bond is the weakest.Due to the different changes between ionic and covalent bond,there is less difference in the stability among the models 1,2 and 3.Therefore,these different models can exist at the same time,or can translate from one to another more easily.In other words,the "rattling" pattern has taken place.Unfilled model of CoSb3,without Ce and Fe,is called model 4.The covalent bond of Co-Sb or Fe-Sb in models 1,2 and 3 is weaker than that of Co-Sb in model 4,as some electrical cloud of Sb takes part in the covalent bond of Ce-Sb in the filled models.The result is consistent with the experimental result that the thermal conductivity of CeCo5Fe3Sb12 is lower than that of CoSb3,and the thermoelectric property of CeCo5Fe3Sb12 is superior to that of CoSb3.

  2. Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface

    Science.gov (United States)

    Levchenko, Iryna; Tomashyk, Vasyl; Stratiychuk, Iryna; Malanych, Galyna; Korchovyi, Andrii; Kryvyi, Serhii; Kolomys, Oleksandr

    2018-04-01

    The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical-mechanical polishing with the (NH4)2Cr2O7-HBr-CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7-HBr-ethylene glycol solutions produces the clean surface of the nanosize level (R a < 0.5 nm).

  3. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    Energy Technology Data Exchange (ETDEWEB)

    Craig, A. P.; Percy, B.; Marshall, A. R. J. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Jain, M. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Wicks, G.; Hossain, K. [Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); Golding, T. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); McEwan, K.; Howle, C. [Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire SP4 0JQ (United Kingdom)

    2015-05-18

    Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

  4. Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique

    International Nuclear Information System (INIS)

    Riech, I.; Gomez-Herrera, M. L.; Diaz, P.; Mendoza-Alvarez, J. G.; Herrera-Perez, J. L.; Marin, E.

    2001-01-01

    We have studied Ga x In 1-x As y Sb 1-y /GaSb heterostructures for x=0.84 and y=0.14 using the photoacoustic technique with the heat transmission configuration. A theoretical model, which includes all the possible nonradiative recombination mechanisms that contribute to heat generation, was developed to calculate the photoacoustic signal for this type of heterostructure. The Auger recombination lifetime τ Auger was determined by fitting our experimental results to the calculated frequency dependence of the theoretical photoacoustic signal. The obtained value for τ Auger is compatible with those reported in the literature for semiconductors with band-gap energies below and above 0.5 eV, the energy region where there is a lack of experimental τ Auger values. Copyright 2001 American Institute of Physics

  5. Effects of Sb-doping on the formation of (K, Na)(Nb, Sb)O3 solid solution under hydrothermal conditions

    International Nuclear Information System (INIS)

    Su Likui; Zhu Kongjun; Bai Lin; Qiu Jinhao; Ji Hongli

    2010-01-01

    (K, Na)(Nb, Sb)O 3 (KNNS) lead-free peizoceramic powders were successfully synthesized by hydrothermal treatment at 240 o C for 8 h using the KOH, NaOH, Nb 2 O 5 and Sb 2 O 3 as raw materials. Effects of Sb-doping on the crystal structure and morphology of the as-prepared powders were investigated by powder X-ray diffraction (XRD), Raman spectra (Raman), scanning electron microscope (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). The Sb element was successfully doped into the alkaline niobate perovskite structure to form crystalline (K 0.7 Na 0.3 )(Nb 0.95 Sb 0.05 )O 3 lead-free piezoelectric ceramic powder, which has a hexagonal morphology due to the aggregation growth of small grains. Phase and morphology evolutions with the reaction time were also studied, and a possible formation mechanism was proposed.

  6. CRYSTAL-QUASICHEMICAL ANALYSIS OF DEFECT SUBSYSTEM OF DOPED PbTe: Sb CRYSTALS AND Pb-Sb-Te SOLID SOLUTIONS

    Directory of Open Access Journals (Sweden)

    D.M. Freik

    2014-05-01

    Full Text Available Within crystalquasichemical formalism models of point defects of crystals in the Pb-Sb-Te system were specified. Based on proposed crystalquasichemical formulae of antimony doped crystals PbTe:Sb amphoteric dopant effect was explained. Mechanisms of solid solution formation for РbТе-Sb2Те3: replacement of antimony ions lead sites  with the formation of cation vacancies  (I or neutral interstitial tellurium atoms  (II were examined. Dominant point defects in doped crystals PbTe:Sb and РbТе-Sb2Те3 solid solutions based on p-PbTe were defined. Dependences of concentration of dominant point defects, current carriers and Hall concentration on content of dopant compound and the initial deviation from stoichiometry in the basic matrix were calculated.

  7. Physics of bandgap formation in Cu-Sb-Se based novel thermoelectrics: the role of Sb valency and Cu d levels.

    Science.gov (United States)

    Do, Dat; Ozolins, Vidvuds; Mahanti, S D; Lee, Mal-Soon; Zhang, Yongsheng; Wolverton, C

    2012-10-17

    In this paper we discuss the results of ab initio electronic structure calculations for Cu(3)SbSe(4) (Se4) and Cu(3)SbSe(3) (Se3), two narrow bandgap semiconductors of thermoelectric interest. We find that Sb is trivalent in both the compounds, in contrast to a simple nominal valence (ionic) picture which suggests that Sb should be 5 + in Se4. The gap formation in Se4 is quite subtle, with hybridization between Sb 5s and the neighboring Se 4s, 4p orbitals, position of Cu d states, and non-local exchange interaction, each playing significant roles. Thermopower calculations show that Se4 is a better p-type system. Our theoretical results for Se4 agree very well with recent experimental results obtained by Skoug et al (2011 Sci. Adv. Mater. 3 602).

  8. High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector

    Science.gov (United States)

    Ting, David Z.; Soibel, Alexander; Höglund, Linda; Hill, Cory J.; Keo, Sam A.; Fisher, Anita; Gunapala, Sarath D.

    2016-09-01

    The high-temperature characteristics of a mid-wavelength infrared (MWIR) detector based on the Maimon-Wicks InAsSb/AlAsSb nBn architecture was analyzed. The dark current characteristics are examined in reference to recent minority carrier lifetime results. The difference between the responsivity and absorption quantum efficiency (QE) at shorter wavelengths is clarified in terms of preferential absorption of higher-energy photons in the top contact layer, which cannot provide reverse-bias photo-response due to the AlAsSb electron blocking layer and strong recombination. Although the QE does not degrade when the operating temperature increases to 325 K, the turn-on bias becomes larger at higher temperatures. This behavior was originally attributed to the change in the valence band alignment between the absorber and top contact layers caused by the shift in Fermi level with temperature. In this work, we demonstrated the inadequacy of the original description, and offer a more likely explanation based on temperature-dependent band-bending effects.

  9. Kas netilpo tarp politikos ir diplomatijos?

    OpenAIRE

    Streikus, Arūnas

    2008-01-01

    The review analyzes A. Kasparavičius’s monograph “Tarp Politikos ir Diplomatijos: Šventasis Sostas ir Lietuvos Respublika” (Vilnius, 2008). The historiographic value of the study is undisputed. A. Kasperavičius had an opportunity to use a broad spectrum of sources, among which two sets of archive documents stand out: the funds of the archives of Ministry of Foreign Affairs of Lithuania and the Lithuanian Embassy under the Holy See in Rome. A. Kasparavičius managed to avoid the arid scientific...

  10. Elecciones Legislativas en Irán

    Directory of Open Access Journals (Sweden)

    José Antonio Sainz de la Peña

    2012-05-01

    Full Text Available Las elecciones legislativas en Irán, una vez eliminados los reformistas se han celebrado en un clima de rivalidad. Las elecciones tenían que dejar claro quién mandaba en Irán, si los clérigos y el Guía el ayatolá Seyed Ali Jamenei o, el Presidente de la República, el laico Mahmud Ahmadineyad, apoyado en el Cuerpo de Guardias Revolucionarios. La realidad ha sido que las facciones conservadoras encabezadas por el Frente Unido Principalista, apoyados por el Guía Supremo, han obtenido el triunfo.

  11. TANK 40 FINAL SB4 CHEMICAL CHARACTERIZATION RESULTS

    International Nuclear Information System (INIS)

    Best, J.

    2008-01-01

    A sample of Sludge Batch 4 (SB4) was pulled from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). This sample was also analyzed for elemental and chemical composition including noble metals. These analyses along with the WAPS analyses will help define the composition of the sludge currently in Tank 40 which is currently being fed to DWPF and will become part of Sludge Batch 5 (SB5). At SRNL the 3-L Tank 40 SB4 sample was transferred from the shipping container into a 4-L vessel and solids allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 280 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO 3 /HCl in sealed Teflon(reg s ign) vessels and four in Na 2 O 2 using Zr crucibles. Due to the use of Zr crucibles and Na in the peroxide fusions, Na and Zr cannot be determined from this preparation. Three glass standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted and submitted to Analytical Development (AD) for inductively coupled plasma-atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma-mass spectrometry (ICP-MS) analysis, and cold vapor atomic absorption (CV-AA) analysis. Equivalent dilutions of the peroxide fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB4 supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES and ICP-MS. Weighted dilutions of slurry were submitted for ion chromatography (IC), total inorganic carbon/total organic carbon (TIC/TOC), and total base analyses. A sample of Tank 40 SB4 decant was collected by carefully removing the supernate phase

  12. Thermodynamics of (Ga, In)-Sb-O-Si and impact on dewetting process

    Energy Technology Data Exchange (ETDEWEB)

    Sylla, L. [Cyberstar, Echirolles (France); Duffar, T. [SIMaP-EPM, Saint Martin d' Heres (France)

    2011-11-15

    A thermodynamic study is performed for the systems (Ga or In)-Sb-O-Si in order to better understand the difference observed during dewetting experiments of GaSb and InSb in silica ampoules. Results show that the melts can be considered as non reactive toward silica. When the atmosphere is clean ({<=}1 ppm O{sub 2}), no oxide is formed, while, under oxidising atmosphere, oxides exist above the melting point of the antimonide and are known to increase the wetting angle of the melt on the crucible. However the temperature range for oxide stability is smaller in the case of InSb and this may explain why dewetting is easy for GaSb in presence of oxygen, while it is difficult for InSb. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Three dimensional atom probe imaging of GaAsSb quantum rings

    International Nuclear Information System (INIS)

    Beltran, A.M.; Marquis, E.A.; Taboada, A.G.; Ripalda, J.M.; Garcia, J.M.; Molina, S.I.

    2011-01-01

    Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs x Sb 1-x quantum rings of 20-30 nm in diameter with x∼0.33. -- Highlights: → Atom-probe tomography resolves QR morphology of GaSb self-assembled GaSb buried nanostructures. → From atom-probe tomography compositional distribution has been obtained. → Strong segregation and morphological changes are observed with respect to uncapped QR.

  14. Enhanced photovoltaic performance of Sb2S3-sensitized solar cells through surface treatments

    Science.gov (United States)

    Ye, Qing; Xu, Yafeng; Chen, Wenyong; Yang, Shangfeng; Zhu, Jun; Weng, Jian

    2018-05-01

    Efficient antimony sulfide (Sb2S3)-sensitized solar cells were obtained by a sequential treatment with thioacetamide (TA) and 1-decylphosphonic acid (DPA). Compared with the untreated Sb2S3-sensitized solar cells, the power conversion efficiency of the treated Sb2S3 solar cells was improved by 1.80% to 3.23%. The TA treatment improved the Sb2S3 films by reducing impurities and decreasing the film's surface defects, which inhibited the emergence of recombination centers. The DPA treatment reduced the recombination between hole transport materials (HTMs) and the Sb2S3. Therefore, we have presented an efficient strategy to improve the performance of Sb2S3-sensitized solar cells.

  15. Encapsulated thermopile detector array for IR microspectrometer

    NARCIS (Netherlands)

    Wu, H.; Emadi, A.; De Graaf, G.; Wolffenbuttel, R.F.

    2010-01-01

    The miniaturized IR spectrometer discussed in this paper is comprised of: slit, planar imaging diffraction grating and Thermo-Electric (TE) detector array, which is fabricated using CMOS compatible MEMS technology. The resolving power is maximized by spacing the TE elements at an as narrow as

  16. TIJAH: Embracing IR Methods in XML Databases

    NARCIS (Netherlands)

    List, Johan; Mihajlovic, V.; Ramirez, Georgina; de Vries, A.P.; Hiemstra, Djoerd; Blok, H.E.

    2005-01-01

    This paper discusses our participation in INEX (the Initiative for the Evaluation of XML Retrieval) using the TIJAH XML-IR system. TIJAH's system design follows a `standard' layered database architecture, carefully separating the conceptual, logical and physical levels. At the conceptual level, we

  17. IR and OLAP in XML document warehouses

    DEFF Research Database (Denmark)

    Perez, Juan Manuel; Pedersen, Torben Bach; Berlanga, Rafael

    2005-01-01

    In this paper we propose to combine IR and OLAP (On-Line Analytical Processing) technologies to exploit a warehouse of text-rich XML documents. In the system we plan to develop, a multidimensional implementation of a relevance modeling document model will be used for interactively querying...

  18. Isolated Gramicidin Peptides Probed by IR Spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Rijs, A. M.; Kabeláč, Martin; Abo-Riziq, A.; Hobza, Pavel; de Vries, M. S.

    2011-01-01

    Roč. 12, č. 10 (2011), s. 1816-1821 ISSN 1439-4235 R&D Projects: GA MŠk LC512; GA AV ČR IAA400550808 Institutional research plan: CEZ:AV0Z40550506 Keywords : density functional calculations * gramicidin * IR spectroscopy * protein folding Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.412, year: 2011

  19. Airborne pipeline leak detection: UV or IR?

    Science.gov (United States)

    Babin, François; Gravel, Jean-François; Allard, Martin

    2016-05-01

    This paper presents a study of different approaches to the measurement of the above ground vapor plume created by the spill caused by a small 0.1 l/min (or less) leak in an underground liquid petroleum pipeline. The scenarios are those for the measurement from an airborne platform. The usual approach is that of IR absorption, but in the case of liquid petroleum products, there are drawbacks that will be discussed, especially when using alkanes to detect a leak. The optical measurements studied include UV enhanced Raman lidar, UV fluorescence lidar and IR absorption path integrated lidars. The breadboards used for testing the different approaches will be described along with the set-ups for leak simulation. Although IR absorption would intuitively be the most sensitive, it is shown that UV-Raman could be an alternative. When using the very broad alkane signature in the IR, the varying ground spectral reflectance are a problem. It is also determined that integrated path measurements are preferred, the UV enhanced Raman measurements showing that the vapor plume stays very close to the ground.

  20. Near IR spectra of symbiotic stars

    International Nuclear Information System (INIS)

    Andrillat, Y.

    1982-01-01

    The author reports on recent observations from the near IR spectra of symbiotic stars. The helium and oxygen lines useful for the construction of theoretical models are identified. Observations for cool stars and novae (nebular phase) are outlined and the spectra of specific symbiotic stars between lambdalambda 8000-11000 are presented and discussed. (Auth./C.F.)

  1. Methanol decomposition and oxidation on Ir(111)

    NARCIS (Netherlands)

    Weststrate, C.J.; Ludwig, W.; Bakker, J.W.; Gluhoi, A.C.; Nieuwenhuys, B.E.

    2007-01-01

    The adsorption, decompn., and oxidn. of methanol (CH3OH) has been studied on Ir(111) using temp.-programmed desorption and high-energy resoln. fast XPS. Mol. methanol desorption from a methanol-satd. surface at low temp. shows three desorption peaks, around 150 K (alpha ), around 170 K (beta 1), and

  2. Column Stores as an IR Prototyping Tool

    NARCIS (Netherlands)

    H.F. Mühleisen (Hannes); T. Samar (Thaer); J.J.P. Lin (Jimmy); A.P. de Vries (Arjen)

    2014-01-01

    textabstract. We make the suggestion that instead of implementing custom index structures and query evaluation algorithms, IR researchers should simply store document representations in a column-oriented relational database and write ranking models using SQL. For rapid prototyping, this is

  3. Averaged currents induced by alpha particles in an InSb compound semiconductor detector

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Hishiki, Shigeomi; Kogetsu, Yoshitaka; Nakamura, Tatsuya; Katagiri, Masaki

    2008-01-01

    Very fast pulses due to alpha particle incidence were observed by an undoped-type InSb Schottky detector. This InSb detector was operated without applying bias voltage and its depletion layer thickness was less than the range of alpha particles. The averaged current induced by alpha particles was analyzed as a function of operating temperature and was shown to be proportional to the Hall mobility of InSb. (author)

  4. Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

    Directory of Open Access Journals (Sweden)

    Charith Jayanada Koswaththage

    2016-11-01

    Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

  5. Electronic structure of FeTiSb using relativistic and scalar-relativistic approaches

    Energy Technology Data Exchange (ETDEWEB)

    Sahariya, Jagrati [Department of Physics, Manipal University Jaipur, Jaipur-303007, Rajasthan (India); Mund, H. S., E-mail: hmoond@gmail.com [Department of Physics, M. L. Sukhadia University, Udaipur-313001, Rajasthan (India)

    2016-05-06

    Electronic and magnetic properties of FeTiSb have been reported. The calculations are performed using spin polarized relativistic Korringa-Kohn-Rostoker scheme based on Green’s function method. Within SPR-KKR a fully relativistic and scalar-relativistic approaches have been used to investigate electronic structure of FeTiSb. Energy bands, total and partial density of states, atom specific magnetic moment along with total moment of FeTiSb alloys are presented.

  6. Antimony (SbIII) reduces growth, declines photosynthesis, and modifies leaf tissue anatomy in sunflower (Helianthus annuus L.).

    Science.gov (United States)

    Vaculík, Marek; Mrázová, Anna; Lux, Alexander

    2015-12-01

    The role of antimony (Sb)--a non-essential trace metalloid--in physiological processes running in crops is still poorly understood. Present paper describes the effect of Sb tartrate (SbIII) on growth, Sb uptake, photosynthesis, photosynthetic pigments, and leaf tissue organization in young sunflower plants grown in hydroponics. We found that growth of below- and aboveground part was reduced with increasing concentration of Sb in the medium. Although Sb was mostly taken up by sunflower roots and only small part (1-2%) was translocated to the shoots, decline in photosynthesis, transpiration, and decreased content of photosynthetic pigments were observed. This indicates that despite relatively low mobility of Sb in root-shoot system, Sb in shoot noticeably modifies physiological status and reduced plant growth. Additionally, leaf anatomical changes indicated that Sb reduced the size of intercellular spaces and made leaf tissue more compact.

  7. The TApIR experiment. IR absorption spectra of liquid hydrogen isotopologues

    International Nuclear Information System (INIS)

    Groessle, Robin

    2015-01-01

    The scope of the thesis is the infrared absorption spectroscopy of liquid hydrogen isotopologues with the tritium absorption infrared spectroscopy (TApIR) experiment at the tritium laboratory Karlsruhe (TLK). The calibration process from the sample preparation to the reference measurements are described. A further issue is the classical evaluation of FTIR absorption spectra and the extension using the rolling circle filter (RCF) including the effects on statistical and systematical errors. The impact of thermal and nuclear spin temperature on the IR absorption spectra is discussed. An empirical based modeling for the IR absorption spectra of liquid hydrogen isotopologues is performed.

  8. Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

    International Nuclear Information System (INIS)

    Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin

    2014-01-01

    Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice

  9. Self-organized formation of GaSb/GaAs quantum rings.

    Science.gov (United States)

    Timm, R; Eisele, H; Lenz, A; Ivanova, L; Balakrishnan, G; Huffaker, D L; Dähne, M

    2008-12-19

    Ring-shaped GaSb/GaAs quantum dots, grown by molecular beam epitaxy, were studied using cross-sectional scanning tunneling microscopy. These quantum rings have an outer shape of a truncated pyramid with baselengths around 15 nm and heights of about 2 nm but are characterized by a clear central opening extending over about 40% of the outer baselength. They form spontaneously during the growth and subsequent continuous capping of GaSb/GaAs quantum dots due to the large strain and substantial As-for-Sb exchange reactions leading to strong Sb segregation.

  10. Three dimensional atom probe imaging of GaAsSb quantum rings.

    Science.gov (United States)

    Beltrán, A M; Marquis, E A; Taboada, A G; Ripalda, J M; García, J M; Molina, S I

    2011-07-01

    Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs(x)Sb(1-x) quantum rings of 20-30 nm in diameter with x ∼ 0.33. Copyright © 2011 Elsevier B.V. All rights reserved.

  11. N-doped Sb2Te phase change materials for higher data retention

    International Nuclear Information System (INIS)

    Zhu Min; Wu Liangcai; Rao Feng; Song Zhitang; Li Xuelai; Peng Cheng; Zhou Xilin; Ren Kun; Yao Dongning; Feng Songlin

    2011-01-01

    Highlights: → Crystallization temperatures of the N-doped Sb 2 Te films increase remarkably. → The E a of N-doped Sb 2 Te films increase first, and then decrease. → The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN1 films. → The power consumption of PCRAM test cell based on Sb 2 TeN1 film is low. - Abstract: Crystallization temperatures of the Sb 2 Te films increase remarkably from 139.4 deg. C to 223.0 deg. C as the N 2 flow rates increasing from 0 sccm to 1.5 sccm. Electrical conduction activation energies for amorphous and crystalline states increase by doping nitrogen. A small amount of nitrogen atoms can locate at interstitial sites in the hexagonal structure, generating a strain field, and improving the thermal stability of amorphous state. The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN 1 films. Doping excessively high nitrogen in Sb 2 Te film will form nitride and make Te separate out. As a result, the activation energy for crystallization decreases instead, accompanying with the deterioration of thermal stability. The power consumption of PCRAM test cell based on Sb 2 TeN 1 film is ten times lower than that of PCRAM device using Ge 2 Sb 2 Te 5 films.

  12. Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

    International Nuclear Information System (INIS)

    Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

    2012-01-01

    A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

  13. The Quantum Chemistry Calculation and Thermoelectrics of Bi-Sb-Te Series

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The density function theory and discrete variation method(DFT-DVM) was used to study correlation between composition, structure, chemical bond,and property of thermoelectrics of Bi-Sb-Te series.8 models of Bi20-xSbxTe32(x=0,2,6,8,12,14,18 and 20) were calculated.The results show that there is less difference in the ionic bonds between Te(Ⅰ)-Bi(Sb) and Te(Ⅱ)-Bi(Sb), but the covalent bond of Te(Ⅰ)-Bi(Sb) is stronger than that of Te(Ⅱ)-Bi(Sb).The interaction between Te(Ⅰ) and Te(Ⅰ) in different layers is the weakest and the interaction should be Van Der Waals power.The charge of Sb is lower than that of Bi,and the ionic bond of Te-Sb is weaker than that of Te-Bi.The covalent bond of Te-Sb is also weaker than that of Te-Bi.Therefore,the thermoelectric property may be improved by adjusting the electrical conductivity and thermal conductivity through changing the composition in the compounds of Bi-Sb-Te. The calculated results are consistent with the experiments.

  14. 0+ analogue state in 118Sb from 117Sn(p,nγ) reaction

    International Nuclear Information System (INIS)

    Pal, J.; Dey, C.C.; Bose, S.; Sinha, B.K.; Chatterjee, M.B.; Mahapatra, D.P.

    1996-01-01

    The analogue of the 0 + ground state in 118 Sn has been observed in the compound nucleus 118 Sb through 117 Sn(p,nγ) 117 Sb reaction. The neutron decays of this analogue resonance have been studied from the deexciting γ-rays of the residual nucleus 117 Sb. From off resonance excitation functions, spin assignments have been made to states in 117 Sb, on the basis of Hauser-Feshbach formalism. The resonance parameters of the isobaric analogue resonance have been determined, including the total, proton and neutron decay widths. (orig.)

  15. Atomistic explanation of brittle failure of thermoelectric skutterudite CoSb3

    International Nuclear Information System (INIS)

    Li, Guodong; An, Qi; Goddard, William A.; Hanus, Riley; Zhai, Pengcheng; Zhang, Qingjie; Snyder, G. Jeffrey

    2016-01-01

    CoSb 3 based skutterudite thermoelectric material has superior thermoelectric properties, but the low fracture toughness prevents its widespread commercial application. To determine the origin of its brittle failure, we examined the response of shear deformation in CoSb 3 along the most plausible slip system (010)/<100>, using large-scale molecular dynamics simulations. We find that the brittle failure of CoSb 3 arises from the formation of shear bands due to the destruction of Sb4-rings and the slippage of Co-octahedraes. This leads to the breakage of Co-octahedraes and cavitation, resulting in the crack opening and mechanical failure.

  16. Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

    Science.gov (United States)

    Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2017-08-16

    A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

  17. Sb-Te Phase-change Materials under Nanoscale Confinement

    Science.gov (United States)

    Ihalawela, Chandrasiri A.

    Size, speed and efficiency are the major challenges of next generation nonvolatile memory (NVM), and phase-change memory (PCM) has captured a great attention due to its promising features. The key for PCM is rapid and reversible switching between amorphous and crystalline phases with optical or electrical excitation. The structural transition is associated with significant contrast in material properties which can be utilized in optical (CD, DVD, BD) and electronic (PCRAM) memory applications. Importantly, both the functionality and the success of PCM technology significantly depend on the core material and its properties. So investigating PC materials is crucial for the development of PCM technology to realized enhanced solutions. In regards to PC materials, Sb-Te binary plays a significant role as a basis to the well-known Ge-Sb-Te system. Unlike the conventional deposition methods (sputtering, evaporation), electrochemical deposition method is used due to its multiple advantages, such as conformality, via filling capability, etc. First, the controllable synthesis of Sb-Te thin films was studied for a wide range of compositions using this novel deposition method. Secondly, the solid electrolytic nature of stoichiometric Sb2Te3 was studied with respect to precious metals. With the understanding of 2D thin film synthesis, Sb-Te 1D nanowires (18 - 220 nm) were synthesized using templated electrodeposition, where nanoporous anodic aluminum oxide (AAO) was used as a template for the growth of nanowires. In order to gain the controllability over the deposition in high aspect ratio structures, growth mechanisms of both the thin films and nanowires were investigated. Systematic understanding gained thorough previous studies helped to formulate the ultimate goal of this dissertation. In this dissertation, the main objective is to understand the size effect of PC materials on their phase transition properties. The reduction of effective memory cell size in conjunction with

  18. A new experimental phase diagram investigation of Cu-Sb.

    Science.gov (United States)

    Fürtauer, Siegfried; Flandorfer, Hans

    The binary system Cu-Sb is a constituent system that is studied in investigations of technically important ternary and quaternary alloy systems (e.g., casting alloys and lead-free solders). Although this binary system has been thoroughly investigated over the last century, there are still some uncertainties regarding its high-temperature phases. Thus, parts of its phase diagram have been drawn with dashed lines in reviews published in the literature. The aim of this work was to resolve these uncertainties in the current phase diagram of Cu-Sb by performing XRD, SEM-EDX, EPMA, and DTA. The results from thermal analysis agreed well with those given in the literature, although some modifications due to the invariant reaction temperatures were necessary. In particular, reactions located on the Cu-rich side of the nonquenchable high-temperature β phase (BiF 3 -type) left considerable scope for interpretation. Generally, the structural descriptions of the various binary phases given in the literature were verified. The range of homogeneity of the ε phase (Cu 3 Ti type) was found to be higher on the Sb-rich side. Most of the reaction temperatures were verified, but a few had to be revised, such as the eutectoid reaction [Formula: see text] at 440 °C (found to occur at 427 °C in this work) and the eutectoid reaction [Formula: see text] at 400 °C (found to occur at 440 °C in this work). Further phase transformations that had previously only been estimated were confirmed, and their characteristic temperatures were determined.

  19. Radiation-induced defects in As-Sb-S glass

    International Nuclear Information System (INIS)

    Balitska, V; Shpotyuk, Ya; Filipecki, J; Shpotyuk, O

    2010-01-01

    Defect-related instability was studied in γ-irradiated (As 2 S 3 ) 1-x (Sb 2 S 3 ) x glasses (x = 0, 0.1, 0.2 and 0.3) using positron annihilation lifetime spectroscopy treated within high-measurement statistics. The observed decrease in average positron lifetime in the studied glasses is explained as a renovation of destroyed covalent chemical bonds after irradiation. This process is governed by monomolecular relaxation kinetics, being described in the framework of universal configuration-coordinate model.

  20. Radiation-induced defects in As-Sb-S glass

    Energy Technology Data Exchange (ETDEWEB)

    Balitska, V; Shpotyuk, Ya; Filipecki, J; Shpotyuk, O, E-mail: shpotyuk@novas.lviv.ua

    2010-11-15

    Defect-related instability was studied in {gamma}-irradiated (As{sub 2}S{sub 3}){sub 1-x}(Sb{sub 2}S{sub 3}){sub x} glasses (x = 0, 0.1, 0.2 and 0.3) using positron annihilation lifetime spectroscopy treated within high-measurement statistics. The observed decrease in average positron lifetime in the studied glasses is explained as a renovation of destroyed covalent chemical bonds after irradiation. This process is governed by monomolecular relaxation kinetics, being described in the framework of universal configuration-coordinate model.

  1. Recombination coefficients in extrinsic n-InSb

    International Nuclear Information System (INIS)

    Schneider, W.; Groh, H.; Huebner, K.

    1976-01-01

    The bulk recombination coefficients for linear recombination via recombination centers as well as for direct recombination have been determined measuring the conductivity decay after two-photon absorption with a CO 2 laser. The Suhl effect was applied to measure the surface recombination velocity. The corresponding literature is discussed and compared with our results. We conclude that two different kinds of recombination centers are possible in n-InSb, with energy levels (0.1-0.12)eV above the valence band, or (0.14-0.2)eV respectively. (orig.) [de

  2. Defect analysis of NiMnSb epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Nowicki, L. [Andrzej SoItan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw (Poland)]. E-mail: lech.nowicki@fuw.edu.pl; Turos, A. [Andrzej SoItan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Stonert, A. [Andrzej SoItan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw (Poland); Garrido, F. [Centre de Spectrometrie Nucleaire et Spectrometrie de Masse, CNRS-IN2P3-Universite Paris-Sud, 91405 Orsay (France); Molenkamp, L.W. [Department of Physics, University Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Bach, P. [Department of Physics, University Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Schmidt, G. [Department of Physics, University Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Karczewski, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, POB 510119, 01314 Dresden (Germany)

    2005-10-15

    NiMnSb layers grown on InP substrates with InGaAs buffer were studied by the backscattering/channeling spectrometry (RBS/C) with He beams. The nature of predominant defects observed in the layers was studied by determination of incident-energy dependence of the relative channeling yield. The defects are described as a combination of large amount of interstitial atoms and of stacking faults or grain boundaries. The presence of grains was confirmed by transmission electron microscopy.

  3. Transmutation doping and lattice defects in degenerate InSb

    International Nuclear Information System (INIS)

    Gerstenberg, H.; Glaeser, W.

    1990-01-01

    n-type InSb single crystals were irradiated with thermal neutrons below T = 6 K. The Shubnikov-de Haas effect and the resistivity ρ(T = 4.6 K) were measured as a function of the neutron dose and the holding temperature of a subsequent annealing program. The results are discussed in terms of the transport scattering rate and the lifetime of the Landau-levels. They have to be interpreted by means of n-doping due to nuclear reactions and irradiation induced negatively charged defects. Almost complete annealing of the transport parameters can be achieved by heating the samples to T A = 400 K. (author)

  4. Simultaneous removal of Cd(II) and Sb(V) by Fe–Mn binary oxide: Positive effects of Cd(II) on Sb(V) adsorption

    International Nuclear Information System (INIS)

    Liu, Ruiping; Liu, Feng; Hu, Chengzhi; He, Zan; Liu, Huijuan; Qu, Jiuhui

    2015-01-01

    Highlights: • Fe–Mn binary oxide achieves the simultaneous removal of Cd(II) and Sb(V). • Cd(II) at above 0.25 mmol/L improves Sb(V) adsorption onto FMBO. • Cd(II) improves more significant Sb(V) adsorption than Ca"2"+ and Mn"2"+. • Sb(V) adsorption decreases whereas Cd(II) adsorption increases with elevated pH. • The increased ζ-potential and Cd(II)–Sb(V) precipitation favors Sb(V) adsorption. - Abstract: The coexistence of cadmium ion (Cd(II)) and antimonate (Sb(V)) creates the need for their simultaneous removal. This study aims to investigate the effects of positively-charged Cd(II) on the removal of negative Sb(V) ions by Fe–Mn binary oxide (FMBO) and associated mechanisms. The maximum Sb(V) adsorption density (Q_m_a_x_,_S_b_(_V_)) increased from 1.02 to 1.32 and 2.01 mmol/g in the presence of Cd(II) at 0.25 and 0.50 mmol/L. Cd"2"+ exhibited a more significant positive effect than both calcium ion (Ca"2"+) and manganese ion (Mn"2"+). Cd"2"+ showed higher affinity towards FMBO and increased its ζ-potential more significantly compared to Ca"2"+ and Mn"2"+. The simultaneous adsorption of Sb(V) and Cd(II) onto FMBO can be achieved over a wide initial pH (pH_i) range from 2 to 9, and Q_S_b_(_V_) decreases whereas Q_C_d_(_I_I_) increases with elevated pH_i. Their combined values, as expressed by Q_S_b_(_V_)_+_C_d_(_I_I_), amount to about 2 mmol/g and vary slightly in the pH_i range 4–9. FTIR and XPS spectra indicate the significant synergistic effect of Cd(II) on Sb(V) adsorption onto FMBO, and that little chemical valence transformation occurs. These results may be valuable for the treatment of wastewater with coexisting heavy metals such as Cd(II) and Sb(V).

  5. Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

    OpenAIRE

    Hussain, Arshad; Ahmed, Rashid; Ali, N.; Shaari, A.; Luo, Jing-Ting; Fu, Yong Qing

    2017-01-01

    Copper antimony sulphide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300-375°C. The structural and optical properties of the as-deposited and annealed fil...

  6. First-principles study of electronic structure of CuSbS{sub 2} and CuSbSe{sub 2} photovoltaic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, T., E-mail: tmaeda@ad.ryukoku.ac.jp; Wada, T.

    2015-05-01

    We studied the features of CuSbS{sub 2} (CAS) and CuSbSe{sub 2} (CASe), two proposed photovoltaic compounds, and clarified their electronic structures by first-principles calculations and compared them to the chalcopyrite-type CuInSe{sub 2} results. For both CAS and CASe, the calculated enthalpies of formation of the chalcostibite phases were considerably lower than those of the chalcopyrite phases. Therefore, we considered that the chalcostibite phase is more stable for CAS and CASe. In their band structure calculated with the HSE06 hybrid functional, the valence band maxima of CAS and CASe were located at the Γ-point, and the conduction band minima were located at the R-point. Their second lowest conduction band was located at the Γ-point, whose energy level nearly equaled the R-point. For CAS (CASe), the partial density of the states shows the character of the Cu 3d and S 3p (Se 4p) orbitals at the top of the valence bands and the Sb 5p and S 3p (Se 4p) orbitals at the bottom of the conduction bands. The conduction bands of CAS and CASe have a p-orbital character (Sb 5p) that differs from the s-orbital character (In 5s) of CuInSe{sub 2}. It is for the reason that CAS and CASe do not have a chalcopyrite structure but a chalcostibite-type structure. The calculated absorption coefficient of CuSbS{sub 2} (10{sup 4}-10{sup 5} cm{sup −1}) is comparable to that of CuInSe{sub 2}. - Highlights: • We studied the features of CuSbS{sub 2} and CuSbSe{sub 2}, newly proposed photovoltaic compounds. • Chalcostibite phase is more stable in CuSbS{sub 2} and CuSbSe{sub 2}. • Band structures of CuSbS{sub 2} and CuSbS{sub 2} were calculated with HSE06 hybrid functional. • Absorption coefficient of chalcostibite-type CuSbS{sub 2} is comparable to that of CuInSe{sub 2}.

  7. The Influence of Growth Temperature on Sb Incorporation in InAsSb, and the Temperature-dependent Impact of Bi Surfactants

    Science.gov (United States)

    2014-01-01

    temperature was set to give a beam equivalent pressure ( BEP ) of 4.8x10-7 Torr, as measured in this configuration. 10 4 We have shown in prior...to the value needed to grow lattice matched InAsSb on GaSb without using Bi surfactant at 415 C. The In growth rate was 1 m/hr. The Sb BEP was...1.2x10-7 Torr and the As BEP was 5.71x10-7 Torr. The absolute flux of all the constituents and the V/III ratios were kept constant for both layers of

  8. Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP

    OpenAIRE

    Toginho Filho, D. O.; Dias, I. F. L.; Duarte, J. L.; Laureto, E.

    2006-01-01

    We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence, reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrors are similar to that observed in bulk samples and associated with the donor an...

  9. Metal-Mesh Optical Filter Technology for Mid IR, Far IR, and Submillimeter, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovative, high transmission band-pass filter technology proposed here is an improvement in multilayer metal-mesh filter design and manufacture for the far IR...

  10. IR-IR Conformation Specific Spectroscopy of Na+(Glucose) Adducts

    Science.gov (United States)

    Voss, Jonathan M.; Kregel, Steven J.; Fischer, Kaitlyn C.; Garand, Etienne

    2018-01-01

    We report an IR-IR double resonance study of the structural landscape present in the Na+(glucose) complex. Our experimental approach involves minimal modifications to a typical IR predissociation setup, and can be carried out via ion-dip or isomer-burning methods, providing additional flexibility to suit different experimental needs. In the current study, the single-laser IR predissociation spectrum of Na+(glucose), which clearly indicates contributions from multiple structures, was experimentally disentangled to reveal the presence of three α-conformers and five β-conformers. Comparisons with calculations show that these eight conformations correspond to the lowest energy gas-phase structures with distinctive Na+ coordination. [Figure not available: see fulltext.

  11. Structural, vibrational and electrical properties of ordered double perovskite oxide BaLaMnSbO6

    International Nuclear Information System (INIS)

    Bharti, Chandrahas; Sen, A.; Chanda, Sadhan; Sinha, T.P.

    2014-01-01

    Graphical abstract: Raman spectrum with group theoretical analysis -- Highlights: • BaLaMnSbO 6 (BLMS) is synthesized in tetragonal phase (TP). • Rietveld refinement and Raman spectroscopy confirms the TP. • The presence of cation ordering is observed. • The electrical activation energy is ∼0.5 eV. • BLMS shows polaron hopping. -- Abstract: BaLaMnSbO 6 (BLMS) has been successfully synthesized by solid-state reaction technique. In contrast to earlier reports, Rietveld refinement of powder X-ray diffraction (XRD) data of BLMS shows tetragonal structure having space group I4/m. The octahedral tilt about the direction of the c-axis is found to be 8.99° and the superlattice line (0 1 1) indicates the presence of cation ordering. FT-IR and Raman analysis as well as group theoretical investigation confirm the ordered tetragonal structure of BLMS with I4/m space group. The anti-phase distortions appear to be sufficiently large as detected by infrared and Raman spectroscopies, which give rise to the degeneracy and breaking of the symmetries of the normal modes. Impedance spectroscopy is used to investigate the dielectric relaxation and ac electrical conductivity in the temperature range of 303–403 K and in the frequency range of 0.1 kHz–1 MHz. Experimental electric modulus data are fitted to the Cole–Cole model in order to analyse the dielectric relaxation in BLMS. The frequency dependence ac electrical conductivity data are fitted to Jonscher’s universal power law at various temperatures. The dc conductivity follows Arrhenius law with activation energy (E a ) 0.51 eV suggesting the polaron hopping. The complex impedance plane plots of BLMS indicate the presence of both grain and grain boundary effects and are analyzed by the electrical equivalent circuit consisting of a resistance and capacitance

  12. Structural, vibrational and electrical properties of ordered double perovskite oxide BaLaMnSbO{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Bharti, Chandrahas, E-mail: bhartic@cgcri.res.in [Sensor and Actuator Division, CSIR-Central Glass and Ceramic Research Institute, 196, Raja SC Mullick Road, Kolkata 700032 (India); Sen, A. [Sensor and Actuator Division, CSIR-Central Glass and Ceramic Research Institute, 196, Raja SC Mullick Road, Kolkata 700032 (India); Chanda, Sadhan; Sinha, T.P. [Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata 700009 (India)

    2014-03-25

    Graphical abstract: Raman spectrum with group theoretical analysis -- Highlights: • BaLaMnSbO{sub 6} (BLMS) is synthesized in tetragonal phase (TP). • Rietveld refinement and Raman spectroscopy confirms the TP. • The presence of cation ordering is observed. • The electrical activation energy is ∼0.5 eV. • BLMS shows polaron hopping. -- Abstract: BaLaMnSbO{sub 6} (BLMS) has been successfully synthesized by solid-state reaction technique. In contrast to earlier reports, Rietveld refinement of powder X-ray diffraction (XRD) data of BLMS shows tetragonal structure having space group I4/m. The octahedral tilt about the direction of the c-axis is found to be 8.99° and the superlattice line (0 1 1) indicates the presence of cation ordering. FT-IR and Raman analysis as well as group theoretical investigation confirm the ordered tetragonal structure of BLMS with I4/m space group. The anti-phase distortions appear to be sufficiently large as detected by infrared and Raman spectroscopies, which give rise to the degeneracy and breaking of the symmetries of the normal modes. Impedance spectroscopy is used to investigate the dielectric relaxation and ac electrical conductivity in the temperature range of 303–403 K and in the frequency range of 0.1 kHz–1 MHz. Experimental electric modulus data are fitted to the Cole–Cole model in order to analyse the dielectric relaxation in BLMS. The frequency dependence ac electrical conductivity data are fitted to Jonscher’s universal power law at various temperatures. The dc conductivity follows Arrhenius law with activation energy (E{sub a}) 0.51 eV suggesting the polaron hopping. The complex impedance plane plots of BLMS indicate the presence of both grain and grain boundary effects and are analyzed by the electrical equivalent circuit consisting of a resistance and capacitance.

  13. Effect of tungsten on the phase-change properties of Ge{sub 8}Sb{sub 2}Te{sub 11} Thin Films for the Phase-change device

    Energy Technology Data Exchange (ETDEWEB)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin [Chonnam National University, Gwangju (Korea, Republic of)

    2017-07-15

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge{sub 8}Sb{sub 2}Te{sub 11} thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge{sub 8}Sb{sub 2}Te{sub 11} and W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E{sub op}), slope B{sup 1/2}, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B{sup 1/2} and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T{sub c}). An increase in the T{sub c} increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R{sub s}) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  14. Suppression of superconductivity in Nb by IrMn in IrMn/Nb bilayers

    KAUST Repository

    Wu, B. L.

    2013-10-10

    Effect of antiferromagnet on superconductivity has been investigated in IrMn/Nb bilayers. Significant suppression of both transition temperature (Tc) and lower critical field (Hc1) of Nb is found in IrMn/Nb bilayers as compared to a single layer Nb of same thickness; the suppression effect is even stronger than that of a ferromagnet in NiFe/Nb bilayers. The addition of an insulating MgO layer at the IrMn-Nb interface nearly restores Tc to that of the single layer Nb, but Hc1 still remains suppressed. These results suggest that, in addition to proximity effect and magnetic impurity scattering, magnetostatic interaction also plays a role in suppressing superconductivity of Nb in IrMn/Nb bilayers. In addition to reduced Tc and Hc1, the IrMn layer also induces broadening in the transition temperature of Nb, which can be accounted for by a finite distribution of stray field from IrMn.

  15. Discrimination of Chinese Sauce liquor using FT-IR and two-dimensional correlation IR spectroscopy

    Science.gov (United States)

    Sun, Su-Qin; Li, Chang-Wen; Wei, Ji-Ping; Zhou, Qun; Noda, Isao

    2006-11-01

    We applied the three-step IR macro-fingerprint identification method to obtain the IR characteristic fingerprints of so-called Chinese Sauce liquor (Moutai liquor and Kinsly liquor) and a counterfeit Moutai. These fingerprints can be used for the identification and discrimination of similar liquor products. The comparison of their conventional IR spectra, as the first step of identification, shows that the primary difference in Sauce liquor is the intensity of characteristic peaks at 1592 and 1225 cm -1. The comparison of the second derivative IR spectra, as the second step of identification, shows that the characteristic absorption in 1400-1800 cm -1 is substantially different. The comparison of 2D-IR correlation spectra, as the third and final step of identification, can discriminate the liquors from another direction. Furthermore, the method was successfully applied to the discrimination of a counterfeit Moutai from the genuine Sauce liquor. The success of the three-step IR macro-fingerprint identification to provide a rapid and effective method for the identification of Chinese liquor suggests the potential extension of this technique to the identification and discrimination of other wine and spirits, as well.

  16. Microstructure evolution in pulsed laser deposited epitaxial Ge-Sb-Te chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ross, Ulrich; Lotnyk, Andriy, E-mail: andriy.lotnyk@iom-leipzig.de; Thelander, Erik; Rauschenbach, Bernd

    2016-08-15

    The thin film deposition and structure of highly oriented telluride compounds is of particular interest for phase-change applications in next-generation non-volatile memory such as heterostructure designs, as well as for the investigation of novel optical, thermoelectric and ferroelectric properties in layered telluride compounds. In this work, epitaxial Ge-Sb-Te thin films were successfully produced by pulsed laser deposition on silicon with and without amorphous SiO{sub x} interlayer at elevated process temperatures from a Ge{sub 2}Sb{sub 2}Te{sub 5} target. Aberration-corrected high-resolution scanning transmission electron microscopy (STEM) imaging reveals a distinct interface configuration of the trigonal phase connected by a quasi van der Waals gap (vacancy) to the Sb/Te-passivated single crystalline Si substrate, yet also an intermediate textured growth regime in which the substrate symmetry is only weakly coupled to the thin film orientation, as well as strong deviation of composition at high deposition temperatures. Textured growth of Ge-Sb-Te thin film was also observed on SiO{sub x}/Si substrate with no evidence of an intermediate Sb/Te surface layer on top of an SiO{sub x} layer. In addition, particular defect structures formed by local reorganization of the stacking sequence across the vacancy gap are observed and appear to be intrinsic to these van der Waals-layered compounds. Theoretical image simulations of preferred stacking sequences can be matched to individual building blocks in the Ge-Sb-Te grain. - Highlights: • Atomic-resolution Cs-corrected STEM imaging of PLD deposited Ge-Sb-Te thin films. • Changing of overall composition with increasing deposition temperature. • Direct imaging of surface passivation Sb/Te layer at the Ge-Sb-Te/Si(111) interface. • The Sb/Te passivation layer is not a prerequisite for highly oriented growth of Ge-Sb-Te thin films.

  17. Peculiarities of thermoelectric half-Heusler phase formation in Zr–Co–Sb ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V.V., E-mail: romakav@lp.edu.ua [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Romaka, L. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Rogl, P. [Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Army Academy named after Hetman Petro Sahaydachnyi, Gvardijska Str. 32, 79012 Lviv (Ukraine); Korzh, R.; Duriagina, Z. [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Horyn, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

    2014-02-05

    Highlights: • Phase relations for the Zr–Co–Sb system at 500 °C. • Homogeneity region for half-Heusler phase. • The distribution of DOS for Zr{sub 1+x}Co{sub 1−x}Sb predicts transition from semiconductor (x = 0) to metallic (x = 0.13) like behavior. • The existence of the solid solution Zr{sub 5}Co{sub x}Sb{sub 3+y} (x = 0.0–1.0, y = 0.0–1.0). -- Abstract: The phase equilibria in the Zr–Co–Sb ternary system were studied at 873 K by means of X-ray and metallographic analyses in the whole concentration range. The interaction between the elements results the formation of four ternary compounds at investigated temperature: ZrCoSb (MgAgAs-type), Zr{sub 6}CoSb{sub 2} (K{sub 2}UF{sub 6}-type), Zr{sub 5}CoSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type) and Zr{sub 5}Co{sub 0.5}Sb{sub 2.5} (W{sub 5}Si{sub 3}-type). The limited composition Zr{sub 5}CoSb{sub 3} of the solid solution based on the Zr{sub 5}Sb{sub 3−4} binaries is considered as compound with Hf{sub 5}CuSn{sub 3} structure type. The influence of the disordering and defects in the crystal structure of ZrCoSb on the physical properties was analyzed. The performed electronic structure calculations are in good agreement with electrical and magnetic studies.

  18. Development of pixellated Ir-TESs

    Science.gov (United States)

    Zen, Nobuyuki; Takahashi, Hiroyuki; Kunieda, Yuichi; Damayanthi, Rathnayaka M. T.; Mori, Fumiakira; Fujita, Kaoru; Nakazawa, Masaharu; Fukuda, Daiji; Ohkubo, Masataka

    2006-04-01

    We have been developing Ir-based pixellated superconducting transition edge sensors (TESs). In the area of material or astronomical applications, the sensor with few eV energy resolution and over 1000 pixels imaging property is desired. In order to achieve this goal, we have been analyzing signals from pixellated TESs. In the case of a 20 pixel array of Ir-TESs, with 45 μm×45 μm pixel sizes, the incident X-ray signals have been classified into 16 groups. We have applied numerical signal analysis. On the one hand, the energy resolution of our pixellated TES is strongly degraded. However, using pulse shape analysis, we can dramatically improve the resolution. Thus, we consider that the pulse signal analysis will lead this device to be used as a practical photon incident position identifying TES.

  19. Development of pixellated Ir-TESs

    International Nuclear Information System (INIS)

    Zen, Nobuyuki; Takahashi, Hiroyuki; Kunieda, Yuichi; Dayanthi, Rathnayaka M.T.; Mori, Fumiakira; Fujita, Kaoru; Nakazawa, Masaharu; Fukuda, Daiji; Ohkubo, Masataka

    2006-01-01

    We have been developing Ir-based pixellated superconducting transition edge sensors (TESs). In the area of material or astronomical applications, the sensor with few eV energy resolution and over 1000 pixels imaging property is desired. In order to achieve this goal, we have been analyzing signals from pixellated TESs. In the case of a 20 pixel array of Ir-TESs, with 45 μmx45 μm pixel sizes, the incident X-ray signals have been classified into 16 groups. We have applied numerical signal analysis. On the one hand, the energy resolution of our pixellated TES is strongly degraded. However, using pulse shape analysis, we can dramatically improve the resolution. Thus, we consider that the pulse signal analysis will lead this device to be used as a practical photon incident position identifying TES

  20. Development of Ir/Au-TES microcalorimeter

    International Nuclear Information System (INIS)

    Kunieda, Yuichi; Fukuda, Daiji; Ohno, Masashi; Nakazawa, Masaharu; Takahashi, Hiroyuki; Ataka, Manabu; Ohkubo, Masataka; Hirayama, Fuminori

    2004-01-01

    We are developing X-ray microcalorimeters using transition edge sensors (TES) for high resolution x-ray spectroscopy. Microcalorimeters are thermal detectors which measure the energy of an incident x-ray photon using a TES thermometer operated at a sharp transition edge between normal and superconducting states. TES microcalorimeters can achieve faster response than conventional microcalorimeters by keeping the operating point of TES in the transition region through the use of strong negative electrothermal feedback (ETF). We developed a bilayer TES where a normal metal Au was deposited on a superconductor Ir in order to improve the thermal conductivity of the Ir-TES. We investigated resistance-temperature characteristics. As a result, it showed a very sharp transition within 1 mK at the temperature of 110 mK. The energy resolution of 9.4 eV (FWHM) was achieved for a 5899 eV Mn K al line. (author)

  1. Point defect states in Sb-doped germanium

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Neil S., E-mail: neilp@mit.edu; Monmeyran, Corentin, E-mail: comonmey@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Agarwal, Anuradha [Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Kimerling, Lionel C. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

    2015-10-21

    Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E{sub 37}, E{sub 30}, E{sub 22}, and E{sub 21}) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E{sub 37} is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 10{sup 11 }cm{sup −3} Mrad{sup −1} for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E{sub 22}, E{sub 21}, and E{sub 30} indicate that E{sub 22} likely contains two interstitials.

  2. SB LOCA analyses for Krsko Full Scope Simulator verification

    International Nuclear Information System (INIS)

    Prosek, A.; Parzer, I.; Mavko, B.

    2000-01-01

    Nuclear power plant simulators are intended to be used for training and maintaining competence to ensure safe, reliable operation of nuclear power plants throughout the world. The simulator shall be specified to a reference unit and its performance validation testing shall be provided. In this study a small-break loss-of-coolant accident (SB LOCA) response of Krsko nuclear power plant (NPP) was calculated for full scope simulator verification. The investigation included five cases with varying the break size in the cold leg of reactor coolant system. The plant specific and verified RELAP5/MOD2 model of Krsko nuclear power plant (NPP), developed in the past for 1882 MWt power, was adapted for 2000 MWt power (cycle 17) including the model for replacement steam generators. The results showed that the plant system response to breaks with small break area was slower compared to breaks with larger break area. The core heatup occurred in most of the cases analyzed. The acceptance criteria for emergency core cooling system were also met. The predicted results of the SB LOCA analysis for Krsko NPP suggest that they may be used for verification of the Krsko Full Scope Simulator performance. (author)

  3. Production of 122Sb for the study of environmental pollution

    International Nuclear Information System (INIS)

    Mahdi Sadeghi; Mohammadreza Aboudzadeh; Parvin Sarabadani; Milad Enferadi

    2011-01-01

    This article presents, 122 Sb (T 1/2 = 2.723 days, I β- 97.59%) was produced via the nat Sn(p,xn) nuclear process at the AMIRS (Cyclone-30, IBA, Belgium). The electrodeposition experiments were carried out by potassium stannate trihydrate (K 2 Sn(OH) 6 ) and potassium hydroxide. The optimum conditions of the electrodeposition of tin were as follows: 40 g/L nat Sn, 20 g/L KOH, 115 g/L K 2 Sn(OH) 6 , DC current density of 5 A/dm 2 with a bath temperature of 75 deg C. The electroplated Tin-target was irradiated with 26.5 MeV protons at current of 180 μA for 20 min. Solvent extraction of no-carrier-added 122 Sb from irradiated Tin-natural target hydrochloric solution was investigated using di-n-butyl ether (C 8 H 18 O). Yields of about 3.61 MBq/μAh were experimentally obtained. (author)

  4. Synthesis and characterisation of YbPdSb

    Energy Technology Data Exchange (ETDEWEB)

    Haines, Charles R.S.; Brown, Philip A.C.; Grosche, Friedrich M. [Department of Physics, Cavendish Laboratory, University of Cambridge (United Kingdom)

    2016-07-01

    The intermetallic compound YbPdSb can form in two structures: the low temperature (LT) half-Heusler phase, in which the Yb atoms form a frustrated fcc structure, and the high temperature (HT) Pnma modification. We have prepared phase pure samples of both structures and report resistivity, magnetisation and heat capacity measurements on both. The LT phase is a Kondo lattice system showing large-moment Curie-Weiss paramagnet behaviour without any phase transition anomalies down to the lowest temperatures measured. The resistivity is rather insensitive to temperature from room temperature down to ∝50 K where it decreases steeply with further cooling. By contrast, in the HT phase the magnetic susceptibility displays weak temperature dependence and the resistivity falls with decreasing temperature in the way expected of a weakly correlated metal. These findings suggest that in contrast to the electronic state in the LT structure, the 4f-shell of Yb is completely filled in the HT structure of YbPdSb, presenting an interesting opportunity to study the interplay between lattice and electronic structure within the same compound.

  5. Pseudopotential calculations of AlSb under pressure

    Science.gov (United States)

    Algarni, H.; Al-Hagan, O. A.; Bouarissa, N.; Khan, M. A.; Alhuwaymel, T. F.

    2018-02-01

    The dependence on hydrostatic pressure of the electronic and optical properties of zinc-blende AlSb semiconducting material in the pressure range of 0-20 kbar has been reported using a pseudopotential approach. At zero pressure, our findings showed that the electron and heavy hole effective masses are 0.11 and 0.38 m0, respectively. Moreover, our results yielded values of 3.3289 and 11.08 for refractive index and high frequency dielectric constant, respectively. These results are found to be in good accord with experiment. Upon compression, all physical parameters of interest showed a monotonic behavior. The pressure-induced energy shifts for the optical transition related to band-gaps indicated that AlSb remains an indirect (D-X) band-gap semiconductor at pressures from 0 to 20 kbar. The trend in all features of interest versus pressure has been presented and discussed. It is found that the lattice parameter is reduced from 0.61355 to 0.60705 nm when pressure is raised from 0 to 20 kbar. The present investigation may be useful for mid-infrared lasers applications, detectors and communication devices.

  6. Characterization of Ir/Au pixel TES

    International Nuclear Information System (INIS)

    Kunieda, Y.; Takahashi, H.; Zen, N.; Damayanthi, R.M.T.; Mori, F.; Fujita, K.; Nakazawa, M.; Fukuda, D.; Ohkubo, M.

    2006-01-01

    Signal shapes and noise characteristics of an asymmetrical ten-pixel Ir/Au-TES have been studied. The asymmetric design may be effective to realize an imaging spectrometer. Distinct two exponential decays observed for X-ray events are consistent with a two-step R-T curve. A theoretical thermal model for noise in multi-pixel devices reasonably explains the experimental data

  7. Hydrogenation of Very Long Wavelength Infrared Focal Plane Arrays Based on Type II Superlattices, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to advance the Ga-free InAs/InAsSb type II superlattice (T2SL) materials technology for very long wavelength infrared (VLWIR) focal plane arrays (FPAs) by...

  8. Comparisons of TRAC-PF-1 calculations with semiscale Mod-3 small-break tests S-SB-P1 and S-SB-P7

    International Nuclear Information System (INIS)

    Sahota, M.S.

    1982-01-01

    Semiscale Tests S-SB-P1 and S-SB-P7 conducted in the Semiscale Mod-3 facility at the Idaho National Engineering Laboratory are analyzed using the latest released version of the Transient Reactor Analysis Code (TRAC-PF1). The results are used to assess TRAC-PF1 predictions of thermal-hydraulic phenomena and the effects of break size and pump operation on system response during slow transients. Tests S-SB-P1 and S-SB-P7 simulated an equivalent pressurized-water-reactor (PWR) 2.5% communicative cold-leg break for early and late pump trips, respectively, with only high-pressure injection (HPI) into the cold legs. The parameters examined include break flow, primary-system pressure response, primary-system mass distribution, and core characteristics

  9. In-Ga-Zn-oxide thin-film transistors with Sb2TeOx gate insulators fabricated by reactive sputtering using a metallic Sb2Te target

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok

    2011-01-01

    Using reactive sputtering, we made transparent amorphous Sb 2 TeO x thin films from a metallic Sb 2 Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb 2 TeO x gate insulators deposited at room temperature showed a large hysteresis with a counter clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb 2 TeO x films formed at 250 .deg. C. After the IGZO TFT had been annealed at 200 .deg. C for 1 hour in an O 2 ambient, the mobility of the IGZO TFT was 22.41 cm 2 /Vs, and the drain current on-off ratio was ∼10 8 .

  10. Synthesis and structure of bis[(2E)-3-(2-furyl)prop-2-enoato]triphenylantimony Ph{sub 3}Sb[O{sub 2}CCH=CH(C{sub 4}H{sub 3}O)]{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kalistratova, O. S., E-mail: Olga.Kalistratova@yandex.ru; Andreev, P. V.; Gushchin, A. V.; Somov, N. V.; Chuprunov, E. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

    2016-05-15

    Bis[(2E)-3-(2-furyl)prop-2-enoato]triphenylantimony Ph{sub 3}Sb[O{sub 2}CCH=CH(C{sub 4}H{sub 3}O)]{sub 2} is obtained for the first time by the reaction of triphenylantimony, hydrogen peroxide, and 2-furylpropene acid. The X-ray diffraction data show that the central atom of antimony is coordinated in the shape of a distorted trigonal bipyramid. The base of the bipyramid is formed by carbon atoms of phenyl ligands, and the apical vertices are occupied by acid residues. The IR and NMR spectra agree with the composition and structure of the compound.

  11. 77 FR 34073 - Manufacturer of Controlled Substances; Notice of Application; S&B Pharma, Inc.

    Science.gov (United States)

    2012-06-08

    ... DEPARTMENT OF JUSTICE Drug Enforcement Administration Manufacturer of Controlled Substances; Notice of Application; S&B Pharma, Inc. Pursuant to Sec. 1301.33(a), Title 21 of the Code of Federal Regulations (CFR), this is notice that on April 4, 2012, S&B Pharma Inc., 405 South Motor Avenue, Azusa...

  12. Atomic structure of the SbCu surface alloy: A surface X-ray diffraction study

    DEFF Research Database (Denmark)

    Meunier, I.; Gay, J.M.; Lapena, L.

    1999-01-01

    The dissolution at 400 degrees C of an antimony layer deposited at room temperature on a Cu(111) substrate leads to a surface alloy with a p(root 3x root 3)R 30 degrees x 30 degrees superstructure and a Sb composition of 1/3.We present here a structural study of this Sb-Cu compound by surface X...

  13. The Cu-Sb-Se phase system at temperatures between 350 and 700 degree C

    DEFF Research Database (Denmark)

    Karup-Møller, Sven

    1999-01-01

    Phase relations were determined in the Cu-Sb-Se phase system at 300o, 400o, 450o, 500o, 600o and 700oC. Five three-component phases are present at 300oC: permingeatite (Cu3SbSe4), phase A (Cu3SbSe3, the Se-equivalent to skinnerite Cu3SbS3), phase B (CuSbSe2, the Se-equivalent to chalcostibite Cu......SbS2), phase C (Cu5.04Sb35.9Se59.1) and phase D (Cu38.8Sb6.10Se55.1). An X-ray crystallographic study is currently in progress on phase C. Phase D is present in insufficient amounts for such a study. At 400oC phase C and D does not exist and at 500oC all solid ternary phase are absent. At 450oC two...

  14. Preparation and crystal structure of Ca/sub 4/Sb/sub 2/O

    Energy Technology Data Exchange (ETDEWEB)

    Eisenmann, B; Limartha, H; Schaefer, H; Graf, H A

    1980-12-01

    The formerly described compound Ca/sub 2/Sb is to be corrected to Ca/sub 4/Sb/sub 2/O as shown by X-ray diffractometer data of single crystals and neutron diffraction diagrams of powders. The compound crystallizes in the K/sub 2/NiF/sub 4/ type structure.

  15. Ionothermal Synthesis, Structure, and Bonding of the Catena -Heteropolycation 1 ∞ [Sb 2 Se 2 ] +

    KAUST Repository

    Groh, Matthias F.

    2015-01-26

    The reaction of antimony and selenium in the Lewis-acidic ionic liquid 1-butyl-3-methyl-imidazolium tetrachloridoaluminate, [BMIm]Cl•4.7AlCl3, yielded dark-red crystals of [Sb2Se2]AlCl4. The formation starts above 160 ° C; at about 190 ° C, irreversible decomposition takes place. The compound crystallizes in the triclinic space group P 1¯ with a = 919.39(2) pm, b = 1137.92(3) pm, c = 1152.30(3) pm, α = 68.047(1)° , β = 78.115(1)° , γ = 72.530(1)° , and Z = 4. The structure is similar to that of [Sb2Te2]AlCl4 but has only half the number of crystallographically independent atoms. Polycationic chains 1∞ [Sb2Se2]+ form a pseudo-hexagonal arrangement along [011¯] ], which is interlaced by tetrahedral AlCl4 - groups. The catena-heteropolycation 1∞ [Sb2Se2]+ is a sequence of three different four-membered [Sb2Se2 ] rings. The chemical bonding scheme, established from the topological analysis of the real-space bonding indicator ELI-D, includes significantly polar covalent bonding in four-member rings withinthepolycation.Theringsareconnectedintoaninfinitechainbyhomonuclear non-polar Sb-Sb bonds and highly polar Sb-Se bonds. Half of the selenium atoms are three-bonded.

  16. Biocompatibility of GaSb thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

    2017-07-01

    GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

  17. Effect of laser irradiation on Ag4In12Sb56Te28

    Science.gov (United States)

    Chinnusamy, Rangasami

    2018-04-01

    Ag4In12Sb56Te28 has been synthesized by melt-quench method. Phase homogeneity, crystal structure and effect of laser irradiation have been investigated using X-ray diffraction (XRD) and Raman spectroscopy. Rietveld refinement of crystal structure revealed that Ag4In12Sb56Te28 is a multiphase system with AgIn3Te5, Sb8Te3 and Sb phases. Combined optical microscopy and Raman spectroscopy have been used to understand the distribution of different phases on the surface of the samples, which substantiated the results of Rietveld analysis. Interaction of 20 mW laser beam with samples has been investigated using Raman measurements. The results have shown that regions with large phase fraction of AgIn3Te5 become amorphous during laser-sample interaction, but the starting phase remains nearly same after the interaction. Regions with AgIn3Te5 and nearly equal or larger amount of Sb8Te3 have shown significant growth of α-Sb2O3 during and after laser-sample interaction. Regions rich in Sb have shown formation of AgIn3Te5 and growth of α-Sb2O3 during and after interaction. These observations have been explained based on the maximum temperature rise at different regions during laser-sample interaction.

  18. Fluorometric and molecular docking investigation on the binding characteristics of SB202190 to human serum albumin

    International Nuclear Information System (INIS)

    Nasruddin, Ahmad N.; Feroz, Shevin R.; Mukarram, Abdul K.; Mohamad, Saharuddin B.; Tayyab, Saad

    2016-01-01

    The interaction of SB202190, a p38 mitogen-activated protein kinase inhibitor with the main drug transporter in human circulation, human serum albumin (HSA) was studied using fluorescence spectroscopy and in silico docking methods. The association constant, K a of the binding reaction was determined to be 3.24±0.07×10 4 M −1 at 25 °C based on fluorescence quenching titration results. The values of enthalpy change and entropy change for the interaction were found as −8.54 kJ mol −1 and 58.01 J mol −1 K −1 , respectively. Both thermodynamic data and docking results suggested the involvement of hydrophobic and van der Waals forces in the complex formation. Three-dimensional fluorescence data of SB202190–HSA complex demonstrated significant changes in the microenvironment around the protein fluorophores upon drug binding. Comparison of HSA thermograms obtained in the absence and the presence of SB202190 suggested improved protein thermal stability upon complexation with the drug. Competitive drug displacement results as well as modeling data concluded the preferred binding site of SB202190 on HSA as Sudlow's site I. - Highlights: • SB202190 interacts with HSA with moderate affinity. • Involvement of hydrophobic and van der Waals forces in SB202190 binding. • SB202190 binding results in microenvironmental changes around fluorophores. • Sudlow's site I is the preferred binding site of SB202190.

  19. Investigation of broken symmetry of Sb/Cu(111) surface alloys by VT-STM

    CSIR Research Space (South Africa)

    Ndlovu, GF

    2011-07-01

    Full Text Available This work present an in situ Variable Temperature Scanning Tunneling Microscopy (VT-STM) study of the Sb/Cu(111) system studied at various temperatures. The experimental data support a structural model in which Sb atoms displace up to 1...

  20. Bismuth-induced restructuring of the GaSb(110) surface

    DEFF Research Database (Denmark)

    Gemmeren, T. van; Lottermoser, L.; Falkenberg, G.

    1998-01-01

    The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction...

  1. Room temperature synthesis of crystalline Sb2S3 for SnO2 ...

    Indian Academy of Sciences (India)

    attention of researchers owing to their low cost, simple fabrication technique and .... The typical SEM images of as-deposited Sb2S3 in figure 3a show the .... reduce back the excited Sb2S3 to its ground state and to set the system for next ...

  2. SB431542 treatment promotes the hypertrophy of skeletal muscle fibers but decreases specific force

    NARCIS (Netherlands)

    Watt, K.I.; Jaspers, R.T.; Atherton, P.; Smith, K.; Rennie, M.J.; Ratkevicius, A.; Wackerhage, H.

    2010-01-01

    The small molecule inhibitor SB431542 inhibits activin type I receptors. The muscle growth-inhibitor myostatin binds to and signals via these receptors. The aim of this study was to test the hypothesis that SB431542 can inhibit myostatinrelated Smad signaling and induce muscle growth in cultured

  3. Orientation control and thermoelectric properties of FeSb2 films

    DEFF Research Database (Denmark)

    Sun, Ye; Zhang, Eryun; Johnsen, Simon

    2010-01-01

    FeSb2 has a high potential for technological applications due to its colossal thermoelectric power, giant carrier mobility and large magnetoresistance. Earlier, growth of lang1 0 1rang-textured FeSb2 films on quartz (0 0 0 1) substrates has been reported. Here magnetron sputtering is used to obtain...

  4. Tunable surface wettability and water adhesion of Sb2S3 micro-/nanorod films

    International Nuclear Information System (INIS)

    Zhong, Xin; Zhao, Huiping; Yang, Hao; Liu, Yunling; Yan, Guoping; Chen, Rong

    2014-01-01

    Antimony sulfide (Sb 2 S 3 ) films were successfully prepared by spin coating Sb 2 S 3 micro-/nanorods with different sizes on glass slides, which was synthesized via a facile and rapid microwave irradiation method. The prepared Sb 2 S 3 micro-/nanorods and films were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and water contact angle (CA). The as-prepared Sb 2 S 3 films exhibited different surface wettabilities ranging from superhydrophilicity to superhydrophobicity, which was strongly dependent on the diameter of Sb 2 S 3 micro-/nanorod. Sb 2 S 3 film made by nanorods possessed superhydrophobic surface and high water adhesive property. After surface modification with stearic acid, the superhydrophobic surface exhibited an excellent self-cleaning property owing to its low adhesive force. The clarification of three possible states including Wenzel's state, “Gecko” state and Cassie's state for Sb 2 S 3 film surfaces was also proposed to provide a better understanding of interesting surface phenomena on Sb 2 S 3 films.

  5. Two-mode Diode-laser Spectroscopy with a InAsSb/InAsSbP Laser near 3.6 ćm

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Danilova, A. P.; Imenkov, A. N.; Kolchanova, N. M.; Sherstnev, V. V.; Yakovlev, Yu. P.

    1999-01-01

    Roč. 33, č. 12 (1999), s. 1322-1327 ISSN 1063-7826 R&D Projects: GA AV ČR IAA4040708 Institutional research plan: CEZ:A54/98:Z4-040-9-ii Keywords : output frequency of InAsSb/InAsSbP * current dependence Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.565, year: 1999

  6. Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells

    Czech Academy of Sciences Publication Activity Database

    Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.; Semenikhin, P.V.; Kalinina, K.V.; Parfeniev, R.V.; Berezovets, V.A.; Safonchik, M.O.; Hospodková, Alice; Pangrác, Jiří; Zíková, Markéta; Hulicius, Eduard

    2016-01-01

    Roč. 10, č. 4 (2016), 1-8, č. článku 046013. ISSN 1934-2608 R&D Projects: GA ČR GA13-15286S; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : Shubnikov-de Haas oscillations * microwave absorption * electron-paramagnetic resonance * composite quantum wells * InAs/GaSb/AlSb * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.325, year: 2016

  7. The Enzyme Activity and Substrate Specificity of Two Major Cinnamyl Alcohol Dehydrogenases in Sorghum (Sorghum bicolor), SbCAD2 and SbCAD4.

    Science.gov (United States)

    Jun, Se-Young; Walker, Alexander M; Kim, Hoon; Ralph, John; Vermerris, Wilfred; Sattler, Scott E; Kang, ChulHee

    2017-08-01

    Cinnamyl alcohol dehydrogenase (CAD) catalyzes the final step in monolignol biosynthesis, reducing sinapaldehyde, coniferaldehyde, and p -coumaraldehyde to their corresponding alcohols in an NADPH-dependent manner. Because of its terminal location in monolignol biosynthesis, the variation in substrate specificity and activity of CAD can result in significant changes in overall composition and amount of lignin. Our in-depth characterization of two major CAD isoforms, SbCAD2 (Brown midrib 6 [bmr6]) and SbCAD4, in lignifying tissues of sorghum ( Sorghum bicolor ), a strategic plant for generating renewable chemicals and fuels, indicates their similarity in both structure and activity to Arabidopsis ( Arabidopsis thaliana ) CAD5 and Populus tremuloides sinapyl alcohol dehydrogenase, respectively. This first crystal structure of a monocot CAD combined with enzyme kinetic data and a catalytic model supported by site-directed mutagenesis allows full comparison with dicot CADs and elucidates the potential signature sequence for their substrate specificity and activity. The L119W/G301F-SbCAD4 double mutant displayed its substrate preference in the order coniferaldehyde > p -coumaraldehyde > sinapaldehyde, with higher catalytic efficiency than that of both wild-type SbCAD4 and SbCAD2. As SbCAD4 is the only major CAD isoform in bmr6 mutants, replacing SbCAD4 with L119W/G301F-SbCAD4 in bmr6 plants could produce a phenotype that is more amenable to biomass processing. © 2017 American Society of Plant Biologists. All Rights Reserved.

  8. 纳米 Sb2O3/MMA原位乳液聚合研究%Nano-sized Sb2O3/MMA in-situ emulsion polymerization

    Institute of Scientific and Technical Information of China (English)

    谭菁; 吴红兵; 胡红春; 张经武; 解孝林

    2002-01-01

    研究了纳米 Sb2O3/MMA体系的原位乳液聚合反应.结果表明,纳米 Sb2O3对 MMA的聚合无阻聚作用,表面包覆的聚甲基丙烯酸甲酯能有效地解决纳米粒子的团聚问题 .

  9. Supplemental Security Income (SSI) / Internal Revenue Service (IRS) 1099

    Data.gov (United States)

    Social Security Administration — A finder file from SSA's Title XVI database is provided to the IRS. The IRS discloses 1099 information to SSA for use in verifying eligibility, amount, and benefits...

  10. Growth of InTlSB and InTlP for Long Wavelength Infrared Detector Applications

    National Research Council Canada - National Science Library

    Razeghi, M

    1998-01-01

    .... Other novel alloys such as InAsSb and InSbBi are also investigated. The structural, optical, and electrical properties of these novel materials have been investigated in detail with various ex-situ characterization techniques...

  11. Characteristics of phase transition and separation in a In-Ge-Sb-Te system

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sung Jin [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Jang, Moon Hyung [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Park, Seung-Jong [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Cho, Mann-Ho, E-mail: mh.cho@yonsei.ac.kr [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Ko, Dae-Hong [Department of Material Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2012-10-01

    Highlights: Black-Right-Pointing-Pointer InGeSbTe films were fabricated via co-deposition stoichiometric GST and IST targets. Black-Right-Pointing-Pointer As the amount of IST was increased in InGeSbTe, the value for V{sub th} and the phase transition temperature were increased. Black-Right-Pointing-Pointer The phase separation in InGeSbTe is caused by differences in the enthalpy change for formation and different atomic concentrations. - Abstract: In-doped GeSbTe films were deposited by ion beam sputtering deposition (IBSD) using Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) and In{sub 3}Sb{sub 1}Te{sub 2} (IST) as targets. The phase change characteristics of the resulting films were then investigated by electrical measurements, including static testing, in situ 4-point R{sub s} measurements, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The threshold voltage of the films increased, with increasing levels of IST. This phenomenon is consistent with the increased crystallization temperature in X-ray data and in situ 4-point R{sub s} data. In addition, in In{sub 28}Ge{sub 12}Sb{sub 26}Te{sub 34}, multiple V{sub th} values with a stepwise change are observed. The minimum time for the crystallization of InGeSbTe films was shorter than that for GST. X-ray data and Raman data for the crystalline structure show that phase separation to In{sub 2}Te{sub 3} occurred in all of the InGeSbTe samples after annealing at 350 Degree-Sign C. Moreover, in the case of InGeSbTe films with high concentrations of In (28 at.%), Sb phase separation was also observed. The observed phases indicate that the origin of the phase separation of InGeSbTe films is from the enthalpy change of formation and differences in Ge-Te, In-Te, Sb-Te, In-Sb and In-In bond energies.

  12. Optimization of growth parameters for MOVPE-grown GaSb and Ga{sub 1-x}In{sub x}Sb

    Energy Technology Data Exchange (ETDEWEB)

    Miya, S.S.; Wagener, V. [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa); Botha, J.R., E-mail: reinhardt.botha@nmmu.ac.za [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa)

    2012-05-15

    The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 Degree-Sign C at atmospheric pressure. Trimethylindium was added in the case of Ga{sub 1-x}In{sub x}Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga{sub 1-x}In{sub x}Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga{sub 1-x}In{sub x}Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

  13. Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GaINAsSb Lattice-matched to GaSb

    International Nuclear Information System (INIS)

    S Anikeev; D Donetsky; G Belenky; S Luryl; CA Wang; DA Shiau; M Dashiell; J Beausang; G Nichols

    2004-01-01

    Radiative coefficient (B) is a fundamental recombination parameter which is of importance for a variety of optoelectronic minority carrier devices. Radiative recombination was comprehensively studied for wide-bandgap III-V compounds, while for 0.5-0.6 eV materials experimental data are quite limited and demonstrate significant spreading. Here we report excess carrier lifetime in isotype double heterostructures (DHs) of 0.54-eV p-GaInAsSb capped with p-AlGaAsSb, and grown lattice-matched to GaSb. Lifetime was measured by time-resolved photoluminescence (dynamic lifetime) as well as by optical response to sinusoidal excitation (static lifetime). Wide range of GaInAsSb layer thickness was used to separate contributions from interface and radiative recombination processes. Radiative coefficient and recombination velocity at GaInAsSb/AlGaAsSb heterointerface were determined. Temperature dependence of lifetime demonstrated significant contribution of radiative effects to the total recombination

  14. The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys

    International Nuclear Information System (INIS)

    Mohammad, Rezek; Katircioglu, Senay

    2009-01-01

    The band gap bowings of InN x As 1-x , InN x Sb 1-x , and InAs x Sb 1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1-x and InN x Sb 1-x compared to InAs x Sb 1-x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1-x alloys is sharper than that of InN x As 1-x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1-x than in InN x As 1-x alloys to decrease the corresponding effective masses of the electrons around Γ points

  15. Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

    International Nuclear Information System (INIS)

    Lee, Bong-Sub; Bogle, Stephanie N.; Darmawikarta, Kristof; Abelson, John R.; Shelby, Robert M.; Retter, Charles T.; Burr, Geoffrey W.; Raoux, Simone; Bishop, Stephen G.

    2014-01-01

    Phase change memory devices are based on the rapid and reversible amorphous-to-crystalline transformations of phase change materials, such as Ge 2 Sb 2 Te 5 and AgInSbTe. Since the maximum switching speed of these devices is typically limited by crystallization speed, understanding the crystallization process is of crucial importance. While Ge 2 Sb 2 Te 5 and AgInSbTe show very different crystallization mechanisms from their melt-quenched states, the nanostructural origin of this difference has not been clearly demonstrated. Here, we show that an amorphous state includes different sizes and number of nanoscale nuclei, after thermal treatment such as melt-quenching or furnace annealing is performed. We employ fluctuation transmission electron microscopy to detect nanoscale nuclei embedded in amorphous materials, and use a pump-probe laser technique and atomic force microscopy to study the kinetics of nucleation and growth. We confirm that melt-quenched amorphous Ge 2 Sb 2 Te 5 includes considerably larger and more quenched-in nuclei than its as-deposited state, while melt-quenched AgInSbTe does not, and explain this contrast by the different ratio between quenching time and nucleation time in these materials. In addition to providing insights to the crystallization process in these technologically important devices, this study presents experimental illustrations of temperature-dependence of nucleation rate and growth speed, which was predicted by theory of phase transformation but rarely demonstrated

  16. Effect of Sb on physical properties and microstructures of laser nano/amorphous-composite film

    International Nuclear Information System (INIS)

    Li, Jia-Ning; Gong, Shui-Li; Sun, Mei; Shan, Fei-Hu; Wang, Xi-Chang; Jiang, Shuai

    2013-01-01

    A nano/amorphous-composite film was fabricated by laser cladding (LC) of the Co–Ti–B 4 C–Sb mixed powders on a TA15 alloy. Such film mainly consisted of Ti–Al, Co–Ti, Co–Sb intermetallics, TiC, TiB 2 , TiB, and the amorphous phases. Experimental results indicated that the crystal systems of TiB 2 (hexagonal)/TiC (cubic) and Sb (rhombohedral) played important role on the formation of such film. Due to the mismatch of these crystals systems and mutual immiscibility of the metallic components, Sb was not incorporated in TiB 2 /TiC, but formed separate nuclei during the film growth. Thus, the growth of TiB 2 /TiC was stopped by the Sb nucleus in such LC molten pool, so as to form the nanoscale particles

  17. Structural instability and photoacoustic study of AlSb prepared by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Triches, D.M.; Souza, S.M.; Poffo, C.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, 88040-900 Florianopolis, SC (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fsc.ufsc.b [Departamento de Fisica, Universidade Federal de Santa Catarina, 88040-900 Florianopolis, SC (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, 88040-900 Florianopolis, SC (Brazil); Biasi, R.S. de [Secao de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil)

    2010-09-03

    High-purity elemental Al and Sb powders were blended with equiatomic composition and submitted to mechanical alloying. For all milling times, the milled powders showed a mixture of AlSb and elemental Sb. The largest amount of AlSb was reached for milling times between 7 and 10 h. For milling times larger than 10 h, decomposition of AlSb was observed. The volume fractions of the crystalline and interfacial components were estimated using the X-ray diffraction pattern of a sample milled for 10 h. Photoacoustic absorption spectroscopy (PAS) was used to determine the thermal diffusivity and other heat transport parameters in the same sample. A combination of XRD and PAS data was used to estimate the thermal diffusivity of the interfacial component, which has a significant contribution to the thermal diffusivity of the sample.

  18. Structural instability and photoacoustic study of AlSb prepared by mechanical alloying

    International Nuclear Information System (INIS)

    Triches, D.M.; Souza, S.M.; Poffo, C.M.; Lima, J.C. de; Grandi, T.A.; Biasi, R.S. de

    2010-01-01

    High-purity elemental Al and Sb powders were blended with equiatomic composition and submitted to mechanical alloying. For all milling times, the milled powders showed a mixture of AlSb and elemental Sb. The largest amount of AlSb was reached for milling times between 7 and 10 h. For milling times larger than 10 h, decomposition of AlSb was observed. The volume fractions of the crystalline and interfacial components were estimated using the X-ray diffraction pattern of a sample milled for 10 h. Photoacoustic absorption spectroscopy (PAS) was used to determine the thermal diffusivity and other heat transport parameters in the same sample. A combination of XRD and PAS data was used to estimate the thermal diffusivity of the interfacial component, which has a significant contribution to the thermal diffusivity of the sample.

  19. Magnetic and structural properties of Bi(2223doped by pb and Sb

    Directory of Open Access Journals (Sweden)

    H. Salamati

    1998-04-01

    Full Text Available   In a systematic approach, we have investigated the effect of the presence of Pb and Sb in the Bi site in a BSCCO (2223 phase superconductor. There are some contradictory reports in substitution of Sb in the Bi site. Some researchers report an increase in the Tc of these materials. So, we have made an accurate stoichiometry of these superconductors and selected extra pure starting materials with appropriate ratios of Pb+Sb.   The susceptility of these samples have been measured and the structures of the systems have been studied by SEM and XRD. The results of this investigation show that, Although the presence of Pb is essential for formation of (2223 phase, but addition of small amount of Sb helps to stabilize and enhance the ratio of higher phase. Our results show that, presence of Sb would raise the critical current density, but would not affect the Tc of these superconductors.

  20. Stability enhancement and electronic tunability of two-dimensional SbIV compounds via surface functionalization

    Science.gov (United States)

    Zhou, Wenhan; Guo, Shiying; Liu, Xuhai; Cai, Bo; Song, Xiufeng; Zhu, Zhen; Zhang, Shengli

    2018-01-01

    We propose a family of hydrogenated- and halogenated-SbIV (SbIVX-2) materials that simultaneously have two-dimensional (2D) structures, high stability and appealing electronic properties. Based on first-principles total-energy and vibrational-spectra calculations, SbIVX-2 monolayers are found both thermally and dynamically stable. Varying IV and X elements can rationally tune the electronic properties of SbIVX-2 monolayers, effectively modulating the band gap from 0 to 3.42 eV. Regarding such superior stability and broad band-gap range, SbIVX-2 monolayers are expected to be synthesized in experiments and taken as promising candidates for low-dimensional electronic and optoelectronic devices, such as blue-to-ultraviolet light-emitting diodes (LED) and photodetectors.

  1. Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates.

    Science.gov (United States)

    Burrows, Christopher W; Dobbie, Andrew; Myronov, Maksym; Hase, Thomas P A; Wilkins, Stuart B; Walker, Marc; Mudd, James J; Maskery, Ian; Lees, Martin R; McConville, Christopher F; Leadley, David R; Bell, Gavin R

    2013-11-06

    Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent.

  2. Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

    International Nuclear Information System (INIS)

    Feng, ShiQuan; Cheng, XinLu; Zhao, JianLing; Zhang, Hong

    2013-01-01

    In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from T e = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect

  3. Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

    Science.gov (United States)

    Feng, ShiQuan; Zhao, JianLing; Cheng, XinLu; Zhang, Hong

    2013-07-01

    In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from Te = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect.

  4. Phase transitions in thin films of Sn-Sb-Se system

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Abdalla Belal Adam; Yussof Wahab

    1998-01-01

    The preparation and formation of covalent ternary Sn-Sb-Se system were investigated. A solid state reaction technique was employed whereby the evaporated multilayers of Sn/Se/Sb/Sn reacted chemically at a fixed temperature of 240 o C and were allowed to a room temperature slow-cooling. X-ray diffraction analysis showed that phase changes occurred in the system, with indication of amorphization for the predicted Sn 9 .3Sb 8 .1Se 4 4.9 and Sn 1 3.2Sb 4 3.4Se 4 3.4 compositions. These enabled the preliminary topological phase transitions of Sn-Sb-Se system according to the Gibb's triangle in which the areas of crystalline-amorphous were located. (Author)

  5. Low temperature Zn diffusion for GaSb solar cell structures fabrication

    Science.gov (United States)

    Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

    1995-01-01

    Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

  6. NMR studies in the half-Heusler type compound YbPtSb

    Energy Technology Data Exchange (ETDEWEB)

    Koyama, T; Abe, M; Mito, T; Ueda, K; Kohara, T [Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297 (Japan); Suzuki, H S, E-mail: t-koyama@sci.u-hyogo.ac.jp [National Institute for Materials Science, Tsukuba 305-0047 (Japan)

    2011-01-01

    {sup 121}Sb and {sup 19B}Pt nuclear magnetic resonance (NMR) has been studied in the half-Heusler type compound YbPtSb to obtain information on local magnetic behavior. The characteristics of the localized 4f spins are observed in the Cuire-Weiss type behavior of the Knight shifts K for both {sup 121}Sb and {sup 19B}Pt. From the slope of K-{sub {chi}} plots we estimated hyperfine coupling constants of -3.8 and -4.6 kOe/{mu}{sub B} at Sb and Pt sites, respectively. It was found that the spin-echo decay rate 1/T{sub 2} of {sup 121}Sb shows a clear peaks at 10 K. Similar tendency was also observed in case of {sup 19B}Pt. However, static properties do not show any anomalies near 10 K.

  7. Minority-carrier transport in InGaAsSb thermophotovoltaic diodes

    International Nuclear Information System (INIS)

    Charache, G.; Martinelli, R.U.; Garbuzov, D.Z.; Lee, H.; Morris, N.; Odubanjo, T.; Connolly, J.C.

    1997-05-01

    Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 microm) bandgaps exhibit external quantum efficiencies of 59% at 2 microm. The devices have electron diffusion lengths as long as 29 microm in 8-microm-wide p-InGaAsSb layers and hole diffusion lengths of 3 microm in 6-microm-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths. At 632.8 nm the internal quantum efficiencies of diodes with 1- to 8-microm-wide p-layers are above 89% and are independent of the p-layer width, indicating long electron diffusion lengths. InGaAsSb has, therefore, excellent minority carrier transport properties that are well suited to efficient TPV diode operation. The structures were grown by molecular-beam epitaxy

  8. Effect of Sb on physical properties and microstructures of laser nano/amorphous-composite film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jia-Ning, E-mail: jn2369@163.com [Science and Technology on Power Beam Processes Laboratory, Beijing (China); Aviation Industry Corporation of China, Beijing Institute of Aeronautical Materials, Beijing 100095 (China); Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024 (China); Gong, Shui-Li, E-mail: gongshuili@sina.com [Science and Technology on Power Beam Processes Laboratory, Beijing (China); Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024 (China); Sun, Mei; Shan, Fei-Hu; Wang, Xi-Chang [Science and Technology on Power Beam Processes Laboratory, Beijing (China); Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024 (China); Jiang, Shuai [Science and Technology on Power Beam Processes Laboratory, Beijing (China); Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024 (China); Department of Materials Science and Engineering, China University of Petroleum, Qingdao 266580 (China)

    2013-11-01

    A nano/amorphous-composite film was fabricated by laser cladding (LC) of the Co–Ti–B{sub 4}C–Sb mixed powders on a TA15 alloy. Such film mainly consisted of Ti–Al, Co–Ti, Co–Sb intermetallics, TiC, TiB{sub 2}, TiB, and the amorphous phases. Experimental results indicated that the crystal systems of TiB{sub 2} (hexagonal)/TiC (cubic) and Sb (rhombohedral) played important role on the formation of such film. Due to the mismatch of these crystals systems and mutual immiscibility of the metallic components, Sb was not incorporated in TiB{sub 2}/TiC, but formed separate nuclei during the film growth. Thus, the growth of TiB{sub 2}/TiC was stopped by the Sb nucleus in such LC molten pool, so as to form the nanoscale particles.

  9. Phase change behaviors of Zn-doped Ge2Sb2Te5 films

    International Nuclear Information System (INIS)

    Wang Guoxiang; Nie Qiuhua; Shen Xiang; Fu Jing; Xu Tiefeng; Dai Shixun; Wang, R. P.; Wu Liangcai

    2012-01-01

    Zn-doped Ge 2 Sb 2 Te 5 phase-change materials have been investigated for phase change memory applications. Zn 15.16 (Ge 2 Sb 2 Te 5 ) 84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge 2 Sb 2 Te 5 . The proper Zn atom added into Ge 2 Sb 2 Te 5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

  10. Preparation and Characterization of Sb2Te3 Thin Films by Coevaporation

    Directory of Open Access Journals (Sweden)

    Bin Lv

    2010-01-01

    Full Text Available Deposition of Sb2Te3 thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper. Sb2Te3 thin films were characterized by x-ray diffraction (XRD, x-ray fluorescence (XRF, atomic force microscopy (AFM, x-ray photoelectron spectroscopy (XPS, electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred from in situ electrical conductivity measurements. The results indicate that as-grown Sb2Te3 thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

  11. IGF-IR targeted therapy: Past, present and future

    NARCIS (Netherlands)

    J.A.M.J.L. Janssen (Joseph); A.J. Varewijck (Aimee)

    2014-01-01

    textabstractThe IGF-I receptor (IGF-IR) has been studied as an anti-cancer target. However, monotherapy trials with IGF-IR targeted antibodies or with IGF-IR specific tyrosine kinase inhibitors have, overall, been very disappointing in the clinical setting. This review discusses potential reasons

  12. IR Cards: Inquiry-Based Introduction to Infrared Spectroscopy

    Science.gov (United States)

    Bennett, Jacqueline; Forster, Tabetha

    2010-01-01

    As infrared spectroscopy (IR) is frequently used in undergraduate organic chemistry courses, an inductive introduction to IR spectroscopy that uses index cards printed with spectra, structures, and chemical names is described. Groups of students are given an alphabetized deck of these "IR cards" to sort into functional groups. The students then…

  13. Sb2S3:C/CdS p-n junction by laser irradiation

    International Nuclear Information System (INIS)

    Arato, A.; Cardenas, E.; Shaji, S.; O'Brien, J.J.; Liu, J.; Castillo, G. Alan; Das Roy, T.K.; Krishnan, B.

    2009-01-01

    In this paper, we report laser irradiated carbon doping of Sb 2 S 3 thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb 2 S 3 thin films of approximately 0.5 μm in thickness. Sb 2 S 3 thin films were prepared from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb 2 S 3 thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb 2 S 3 :C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb 2 S 3 :C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl 2 , sodium citrate, NH 4 OH and thiourea at 70 deg. C . On the CdS film, Sb 2 S 3 /C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb 2 S 3 side facing the beam. The p-n junction formed by p-Sb 2 S 3 :C and n-type CdS showed V oc = 500 mV and J sc = 0.5 mA/cm 2 under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing

  14. BOOTES-IR: near IR follow-up GRB observations by a robotic system

    International Nuclear Information System (INIS)

    Castro-Tirado, A.J.; Postrigo, A. de Ugarte; Jelinek, M.

    2005-01-01

    BOOTES-IR is the extension of the BOOTES experiment, which operates in Southern Spain since 1998, to the near IR (NIR). The goal is to follow up the early stage of the gamma ray burst (GRB) afterglow emission in the NIR, alike BOOTES does already at optical wavelengths. The scientific case that drives the BOOTES-IR performance is the study of GRBs with the support of spacecraft like INTEGRAL, SWIFT and GLAST. Given that the afterglow emission in both, the NIR and the optical, in the instances immediately following a GRB, is extremely bright (reached V = 8.9 in one case), it should be possible to detect this prompt emission at NIR wavelengths too. The combined observations by BOOTES-IR and BOOTES-1 and BOOTES-2 will allow for real time identification of trustworthy candidates to have a high redshift (z > 5). It is expected that, few minutes after a GRB, the IR magnitudes be H ∼ 7-10, hence very high quality spectra can be obtained for objects as far as z = 10 by larger instruments

  15. GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

    NARCIS (Netherlands)

    Ulloa Herrero, J.M.; Gargallo-Caballero, R.; Bozkurt, M.; Moral, del M.; Guzman, A.; Koenraad, P.M.; Hierro, A.

    2010-01-01

    The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum dots (QDs) are shown to be strongly correlated with structural changes. The observed redshift of the photoluminescence emission is shown to follow two different regimes. In the first regime, with Sb concentrations up

  16. Study on Exploration of Azeotropic Point of Pb-Sb Alloys by Vacuum Distillation and Ab Initio Molecular Dynamic Simulation

    Science.gov (United States)

    Song, Bingyi; Jiang, Wenlong; Yang, Bin; Chen, Xiumin; Xu, Baoqiang; Kong, Lingxin; Liu, Dachun; Dai, Yongnian

    2016-10-01

    The possibility of the separation of Pb-Sb alloys by vacuum distillation was investigated theoretically. The results show that Pb and Sb can be separated by vacuum distillation. However, the experimental results show that vacuum distillation technique does not provide clear separation. According to the literature, Pb-Sb alloys belong to azeotropic compounds under some certain temperature; the experiment and computer simulation were carried out based on the exceptional condition so as to analyze the reason from the experiment and microstructure of Pb-Sb alloys perspective. The separation of Pb-Sb alloys by vacuum distillation was experimentally carried out to probe the azeotropic point. Also, the functions, such as partial radial distributions functions, the structure factor, mean square displacement, and the density of state, were calculated by ab-initio molecular dynamics for the representation of the structure and properties of Pb-Sb alloys with different composition of Sb. The experimental results indicate that there exists common volatilization for Pb-Sb alloys when Sb content is 16.5 wt pct. On the other hand, the calculation results show that there is an intense interaction between Pb and Sb when Sb content is 22 wt pct, which supports the experimental results although Sb content is slightly deviation.

  17. Characterization of diffraction gratings scattering in uv and ir for space applications

    Science.gov (United States)

    Achour, Sakina; Kuperman-Le Bihan, Quentin; Etcheto, Pierre

    2017-09-01

    The use of Bidirectional Scatter Distribution Function (BSDF) in space industry and especially when designing telescopes is a key feature. Indeed when speaking about space industry, one can immediately think about stray light issues. Those important phenomena are directly linked to light scattering. Standard BSDF measurement goniophotometers often have a resolution of about 0.1° and are mainly working in or close to the visible spectrum. This resolution is far too loose to characterize ultra-polished surfaces. Besides, wavelength range of BSDF measurements for space projects needs to be done far from visible range. How can we measure BSDF of ultra-polished surfaces and diffraction gratings in the UV and IR range with high resolution? We worked on developing a new goniophometer bench in order to be able to characterize scattering of ultra-polished surfaces and diffraction gratings used in everyday space applications. This ten meters long bench was developed using a collimated beam approach as opposed to goniophotometer using focused beam. Sources used for IR characterization were CO2 (10.6?m) and Helium Neon (3.39?m) lasers. Regarding UV sources, a collimated and spatially filtered UV LED was used. The detection was ensure by a photomultiplier coupled with synchronous detection as well as a MCT InSb detector. The so-built BSDF measurement instrument allowed us to measure BSDF of ultra-polished surfaces as well as diffraction gratings with an angular resolution of 0.02° and a dynamic of 1013 in the visible range. In IR as well as in UV we manage to get 109 with same angular resolution of 0.02°. The 1m arm and translation stages allows us to measure samples up to 200mm. Thanks to such a device allowing ultra-polished materials as well as diffraction gratings scattering characterization, it is possible to implement those BSDF measurements into simulation software and predict stray light issues. This is a big help for space industry engineers to apprehend stray light

  18. Interface characterization of InSb MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Shapira, Y.; Bregman, J.; Calahorra, Z.; Goshen, R.

    1982-03-26

    The electrical properties of MOS devices are critically dependent on the oxide-semiconductor interface. The preparation of suitable insulating layers of oxide or other material is essential for the performance of such devices and it is particularly difficult in the case of III-V compound semiconductors. We report a method of preparing an insulating layer on InSb by a plasma oxidation process. The oxidation method will be described as well as results of the analysis of the oxide-semiconductor interface by electrical and compositional techniques. Capacitance-voltage characteristics reveal the existence of interface states which are distributed near the conduction and the valence bands with a higher density near the former. Depth profiling of the oxide by Ar/sup +/ sputtering and Auger electron spectroscopy (AES) shows that the oxide is composed of a mixture of indium oxide with antimony oxide.

  19. Measurements of light absorption efficiency in InSb nanowires

    Directory of Open Access Journals (Sweden)

    A. Jurgilaitis

    2014-01-01

    Full Text Available We report on measurements of the light absorption efficiency of InSb nanowires. The absorbed 70 fs light pulse generates carriers, which equilibrate with the lattice via electron-phonon coupling. The increase in lattice temperature is manifested as a strain that can be measured with X-ray diffraction. The diffracted X-ray signal from the excited sample was measured using a streak camera. The amount of absorbed light was deduced by comparing X-ray diffraction measurements with simulations. It was found that 3.0(6% of the radiation incident on the sample was absorbed by the nanowires, which cover 2.5% of the sample.

  20. Characteristics of Ir/Au transition edge sensor

    International Nuclear Information System (INIS)

    Kunieda, Yuichi; Ohno, Masashi; Nakazawa, Masaharu; Takahashi, Hiroyuki; Fukuda, Daiji; Ohkubo, Masataka

    2004-01-01

    A new type of microcalorimeter has been developed using a transition edge sensor (TES) and an electro-thermal feedback (ETF) method to achieve higher energy resolution and higher count rate. We are developing a superconducting Ir-based transition edge sensor (TES) microcalorimeters. To improve thermal conductivity and achieve higher energy resolution with an Ir-TES, we fabricated an Ir/Au bilayer TES by depositing gold on Ir and investigated the influence of intermediate between superconducting and normal states at the transition edge for signal responses by microscopic observation in the Ir/Au-TES. (T. Tanaka)

  1. Mesoporous silica nanoparticle supported PdIr bimetal catalyst for selective hydrogenation, and the significant promotional effect of Ir

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Hui; Huang, Chao; Yang, Fan [The Key Laboratory of Fuel Cell Technology of Guangdong Province, School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510641 (China); Yang, Xu [Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou (China); Du, Li [The Key Laboratory of Fuel Cell Technology of Guangdong Province, School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510641 (China); Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou (China); Liao, Shijun, E-mail: chsjliao@scut.edu.cn [The Key Laboratory of Fuel Cell Technology of Guangdong Province, School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510641 (China); Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou (China)

    2015-12-01

    Graphical abstract: A mesoporous silica nanoparticle (MSN) supported bimetal catalyst, PdIr/MSN, was prepared by a facile impregnation and hydrogen reduction method. The strong promotional effect of Ir was observed and thoroughly investigated. At the optimal molar ratio of Ir to Pd (N{sub Ir}/N{sub Pd} = 0.1), the activity of PdIr{sub 0.1}/MSN was up to eight times and 28 times higher than that of monometallic Pd/MSN and Ir/MSN, respectively. The catalysts were characterized comprehensively by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, and hydrogen temperature programmed reduction, which revealed that the promotional effect of Ir may be due to the enhanced dispersion of active components on the MSN, and to the intensified Pd–Ir electronic interaction caused by the addition of Ir. - Highlights: • Mesoporous nanoparticles were synthesized and used as support for metal catalyst. • PdIr bimetallic catalyst exhibited significantly improved hydrogenation activity. • The strong promotion of Ir was recognized firstly and investigated intensively. • PdIr exhibits 18 times higher activity than Pd to the hydrogenation of nitrobenzene. - Abstract: A mesoporous silica nanoparticle (MSN) supported bimetal catalyst, PdIr/MSN, was prepared by a facile impregnation and hydrogen reduction method. The strong promotional effect of Ir was observed and thoroughly investigated. At the optimal molar ratio of Ir to Pd (N{sub Ir}/N{sub Pd} = 0.1), the activity of PdIr{sub 0.1}/MSN was up to eight times and 28 times higher than that of monometallic Pd/MSN and Ir/MSN, respectively. The catalysts were characterized comprehensively by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, and hydrogen temperature programmed reduction, which revealed that the promotional effect of Ir may be due to the enhanced dispersion of active components on the MSN, and to the intensified Pd–Ir electronic interaction

  2. 124Sb - Activity measurement and determination of photon emission intensities

    International Nuclear Information System (INIS)

    Be, M.M.; Chauvenet, B.

    2009-07-01

    The international traceability of antimony 124, in term of activity, is very limited. The results of 124 Sb activity measurements sent to the SIR (BIPM - International System of Reference, BIPM.RI(II)-K1.Sb-124.) are scarce. Up to now, only three laboratories have contributed. Two of them carried out measurements using the 4πβ-γ coincidence counting technique and the third one using the 4πγ method with a well-type crystal detector. The first two results are in agreement but the last one differs significantly from them, by 2 %. The decay scheme consistency cannot be excluded when trying to explain those discrepancies. In other respects, this nuclide emits high-energy gamma rays, and then could be selected as a valuable standard radionuclide for the calibration of gamma-ray detectors in that energy range, given well known photon intensities. Those considerations led to the proposal of an international exercise and to the realisation of this Euromet project, registered as project no. 907, coordinated by CEA-List-LNE/LNHB. The first part of this exercise was dedicated to activity measurements and to their comparison. For this purpose, participants were asked to make use of all the direct measurement techniques available in their laboratory in order to confirm or not the existence of possible biases specific to some measuring methods. In addition, this exercise offered the opportunity of improving the uncertainties of the gamma-ray intensities. Then, participants were asked, in the second part of the exercise, to carry out X-ray and gamma-ray intensity measurements. These results have been compared to previous published values and new decay scheme data are proposed. Eight international laboratories participated in this exercise. (authors)

  3. Electrical switching in Sb doped Al23Te77 glasses

    Science.gov (United States)

    Pumlianmunga; Ramesh, K.

    2017-08-01

    Bulk glasses (Al23Te77)Sbx (0≤ x≤10) prepared by melt quenching method show a change in switching type from threshold to memory for x≥5. An increase in threshold current (Ith) and a concomitant decrease in threshold voltage (Vth) and resisitivity(ρ) have been observed with the increase of Sb content. Raman spectra of the switched region in memory switching compositions show a red shift with respect to the as prepared glasses whereas in threshold switching compositions no such shift is observed. The magic angle spinning nuclear magnetic resonance (MAS NMR) of 27Al atom shows three different environments for Al ([4]Al, [5]Al and [6]Al). The samples annealed at their respective crystallization temperatures show rapid increase in [4]Al sites by annihilating [5]Al sites. The melts of threshold switching glasses (x≤2.5) quenched in water at room temperature (27 °C) show amorphous structure whereas, the melt of memory switching glasses (x>2.5) solidify into crystalline structure. The higher coordination of Al increases the cross-linking and rigidity. The addition of Sb increases the glass transition(Tg) and decreases the crystallization temperature(Tc). The decrease in the interval between the Tg and Tc eases the transition between the amorphous and crystalline states and improves the memory properties. The temperature rise at the time of switching can be as high as its melting temperature and the material in between the electrodes may melt to form a filament. The filament may consists of temporary (high resistive amorphous) and permanent (high conducting crystalline) units. The ratio between the temporary and the permanent units may decide the switching type. The filament is dominated by the permanent units in memory switching compositions and by the temporary units in threshold switching compositions. The present study suggests that both the threshold and memory switching can be understood by the thermal model and filament formation.

  4. Field-induced transitions in DySb

    International Nuclear Information System (INIS)

    Brun, T.O.; Lander, G.H.; Korty, F.W.; Kouvel, J.S.

    1974-01-01

    The NaCl-structured compound DySb, which in zero field transforms abruptly at T/sub N/ approximately 9.5 0 K to a Type-II antiferromagnetic (A) state with a nearly tetragonal lattice distortion, was previously found to exhibit rapid field-induced changes in magnetization at 1.5 0 K. The field-induced transitions in a DySb crystal have been studied by neutron diffraction and magnetization measurements in fields up to approximately 60 kOe applied parallel to each of the principal axes. In the broken bracket 100 broken bracket case, the transition from the A to an intermediate ferrimagnetic (Q) state is first-order at 4.2 0 K (critical field H/sub c/ approximately 21 kOe) but is continuous from approximately 6 0 K up to T/sub N/: as H/sub c/ → 0. The Q-to-paramagnetic (P) transition is rapid but continuous at 4.2 0 K (H/sub c/ approximately 40 kOe) and becomes broad as T/sub N/ is approached. In the broken bracket 110 broken bracket case the A-to-Q transition remains essentially first-order from 4.2 0 K (H/sub c/ approximately 15 kOe) up to T/sub N/; above T/sub N/ rapid P-to-Q transitions occur at very high fields. The magnetic structure of the Q state is found to be that of HoP. (U.S.)

  5. Controlling Hydrogenation of Graphene on Ir(111)

    DEFF Research Database (Denmark)

    Balog, Richard; Andersen, Mie; Jørgensen, Bjarke

    2013-01-01

    Combined fast X-ray photoelectron spectroscopy and density functional theory calculations reveal the presence of two types of hydrogen adsorbate structures at the graphene/ Ir(111) interface, namely, graphane-like islands and hydrogen dimer structures. While the former give rise to a periodic...... pattern, dimers tend to destroy the periodicity. Our data reveal distinctive growth rates and stability of both types of structures, thereby allowing one to obtain well-defined patterns of hydrogen clusters. The ability to control and manipulate the formation and size of hydrogen structures on graphene...

  6. PEP-II IR-2 Alignment

    International Nuclear Information System (INIS)

    Seryi, A

    2004-01-01

    This paper describes the first results and preliminary analysis obtained with several alignment monitoring systems recently installed in the PEP-II interaction region. The hydrostatic level system, stretched wire system, and laser tracker have been installed in addition to the existing tiltmeters and LVDT sensors. These systems detected motion of the left raft, which correlated primarily with the low energy ring (LER) current. The motion is of the order of 120 micrometers. The cause was identified as synchrotron radiation heating the beampipe, causing its expansion which then results in its deformation and offset of the IR quadrupoles. We also discuss further plans on measurements, analysis and means to counteract this motion

  7. Computer dosimetry of 192Ir wire

    International Nuclear Information System (INIS)

    Kline, R.W.; Gillin, M.T.; Grimm, D.F.; Niroomand-Rad, A.

    1985-01-01

    The dosimetry of 192 Ir linear sources with a commercial treatment planning computer system has been evaluated. Reference dose rate data were selected from the literature and normalized in a manner consistent with our clinical and dosimetric terminology. The results of the computer calculations are compared to the reference data and good agreement is shown at distances within about 7 cm from a linear source. The methodology of translating source calibration in terms of exposure rate for use in the treatment planning computer is developed. This may be useful as a practical guideline for users of similar computer calculation programs for iridium as well as other sources

  8. Pixelated coatings and advanced IR coatings

    Science.gov (United States)

    Pradal, Fabien; Portier, Benjamin; Oussalah, Meihdi; Leplan, Hervé

    2017-09-01

    Reosc developed pixelated infrared coatings on detector. Reosc manufactured thick pixelated multilayer stacks on IR-focal plane arrays for bi-spectral imaging systems, demonstrating high filter performance, low crosstalk, and no deterioration of the device sensitivities. More recently, a 5-pixel filter matrix was designed and fabricated. Recent developments in pixelated coatings, shows that high performance infrared filters can be coated directly on detector for multispectral imaging. Next generation space instrument can benefit from this technology to reduce their weight and consumptions.

  9. Stringy horizons and UV/IR mixing

    Energy Technology Data Exchange (ETDEWEB)

    Ben-Israel, Roy [Physics Department, Tel-Aviv University Israel,Ramat-Aviv, 69978 (Israel); Giveon, Amit [Racah Institute of Physics, The Hebrew University,Jerusalem, 91904 (Israel); Itzhaki, Nissan; Liram, Lior [Physics Department, Tel-Aviv University Israel,Ramat-Aviv, 69978 (Israel)

    2015-11-24

    The target-space interpretation of the exact (in α{sup ′}) reflection coefficient for scattering from Euclidean black-hole horizons in classical string theory is studied. For concreteness, we focus on the solvable SL(2,ℝ){sub k}/U(1) black hole. It is shown that it exhibits a fascinating UV/IR mixing, dramatically modifying the late-time behavior of general relativity. We speculate that this might play an important role in the black-hole information puzzle, as well as in clarifying features related with the non-locality of Little String Theory.

  10. Atsiskaitymai e. versle: ypatumai ir naujos tendencijos

    OpenAIRE

    Vyšniauskas, Jonas

    2014-01-01

    Alternatyvių atsiskaitymų e. versle sistemos pradeda kelti rimtą grėsmę tradiciniams atsiskaitymams elektronine bankininkyste, mokėjimo kortelėmis ar grynaisiais pinigais. Todėl būtina detaliau išsiaiškinti kokie yra alternatyvių atsiskaitymų ypatumai, kurie veiksniai vartotojams yra svarbiausi ir kokie yra alternatyvūs atsiskaitymo būdai. Tai siekiama padaryti išanalizuojant mokslinę literatūrą, pateikiant pagrindines alternatyvių atsiskaitymų sistemas, atliekant alternatyvių atsiskaitymų pa...

  11. Fast IR diodes thermometer for tokamak

    International Nuclear Information System (INIS)

    Chen Xiangbo

    2001-01-01

    A 30 channel fast IR pyrometry array has been constructed for tokamak, which has 0.5 μs time response, 10 mm diameter spatial resolution and 5 degree C temperature resolution. The temperature measuring range is from 250 degree C to 1200 degree C. The two dimensional temperature profiles of the first wall during both major and minor disruptions can be measured with an accuracy of about 1% measuring temperature, which is adequate for tokamak experiments. This gives a very useful tool for the disruption study, especially for the divertor physics and edge heat flux research on tokamak and other magnetic confinement devices

  12. Near IR observations of Quiet Chromosphere

    Science.gov (United States)

    Prasad Choudhary, Debi; Deng, N.; Tejamoortula, U.; Penn, M. J.

    2009-05-01

    We have carried out the observations of quiet solar limb during April 29 to May 1, 2008, March 9-13, 2009 using the vertical spectrograph at the focal plane of McMath-Pierce telescope at Kitt Peak National Observatory. The solar limb was mostly featureless during the observations. The New Infrared Array (NAC) at the exit port of the spectrograph has been used to record the limb spectrum at HeI 1083.0 nm, Hydrogen Paschen beta at 1281.8 nm and Brackett gamma 2165.5 nm wavelength regions. The NAC is a 1024 x 1024 InSb Alladin III Detector operating over 1-5 micron range with high density sampling at 0.018 arc second/pixel. The all-reflective optical train minimizes number of surfaces and eliminates ghosts leading to low scatter, ghost-free optics. The close-cycle cryogenic provides a stable cooling environment over six hour period with an accuracy of about 0.01K leading to low dark current. The low read out noise combined with low scattered light and dark current makes NAC an ideal detector for making high quality infrared spectral observations of solar limb. In this presentation, we shall compare the line parameters of these lines around the solar disk. Acknowledgements: This work is supported by NSF under grant ATM 05-48952 and by NASA under grant NNX08AQ32G.

  13. Design and Development of transducer for IR radiation measurement

    International Nuclear Information System (INIS)

    Pattarachindanuwong, Surat; Poopat, Bovornchoke; Meethong, Wachira

    2003-06-01

    Recently, IR radiation has many important roles such as for plastics industry, food industry and medical instrumentation. The consequence of exposed irradiation objects from IR can be greatly affected by the quantity of IR radiation. Therefore the objectively this research is to design and develop a transducer for IR radiation measurement. By using a quartz halogen lamp as a IR heat source of IR radiation and a thermopile sensor as a transducer. The thermal conductivity of transducer and air flow, were also considered for design and development of transducer. The study shows that the designed transducer can be used and applied in high temperature process, for example, the quality control of welding, the non-contact temperature measurement of drying oven and the testing of IR source in medical therapy device

  14. Ba{sub 4}In{sub 8}Sb{sub 16}: Thermoelectric properties of a new layered Zintl phase with infinite zigzag Sb chains and pentagonal tubes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, S J; Hu, S; Uher, C; Kanatzidis, M G

    1999-11-01

    A new Zintl phase Ba{sub 4}In{sub 8}Sb{sub 16} was obtained from a direct element combination reaction of the elements in a sealed graphite tube at 700 C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 10.166(3) {angstrom}, b = 4.5239(14) {angstrom}, c = 19.495(6) {angstrom}, and Z = 1. Ba{sub 4}In{sub 8}Sb{sub 16} has a two-dimensional structure with thick corrugated (In{sub 8}Sb{sub 16}){sup 8{minus}} layers separated by Ba{sup 2+} ions. In the layer, InSb{sub 4} tetrahedra are connected by sharing three corners and by bridging the fourth corner in such a manner that infinite pentagonal tubes are formed. The compound is a narrow band gap ({approximately} 0.10 eV) semiconductor and satisfies the classical Zintl rule. Band structure calculations confirm that the material is a semiconductor and indicate that it has optimized In-Sb bonding interactions. Polycrystalline ingots of Ba{sub 4}In{sub 8}Sb{sub 16} show room-temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 {micro}V/K. The thermal conductivity of Ba{sub 4}In{sub 8}Sb{sub 16} is about 1.7 W/m{sm{underscore}bullet}K in the temperature range 150--300 K.

  15. Structural and physical properties of Mg3-xZnxSb2 (x=0-1.34)

    International Nuclear Information System (INIS)

    Ahmadpour, Faraz; Kolodiazhnyi, Taras; Mozharivskyj, Yurij

    2007-01-01

    The Mg 3-x Zn x Sb 2 phases with x=0-1.34 were prepared by direct reactions of the elements in tantalum tubes. According to the X-ray single crystal and powder diffraction, the Mg 3-x Zn x Sb 2 phases crystallize in the same P3-bar m1 space group as the parent Mg 3 Sb 2 phase. The Mg 3-x Zn x Sb 2 structure is different from the other substituted structures of Mg 3 Sb 2 , such as (Ca, Sr, Ba) Mg 2 Sb 2 or Mg 5.23 Sm 0.77 Sb 4 , in a way that in Mg 3-x Zn x Sb 2 the Mg atoms on the tetrahedral sites are replaced, while in the other structures Mg on the octahedral sites is replaced. Thermoelectric performance for the two members of the series, Mg 3 Sb 2 and Mg 2.36 Zn 0.64 Sb 2 , was evaluated from low to room temperatures through resistivity, Seebeck coefficient and thermal conductivity measurements. In contrast to Mg 3 Sb 2 which is a semiconductor, Mg 2.36 Zn 0.64 Sb 2 is metallic and exhibits an 18-times larger dimensionless figure-of-merit, ZT, at room temperature. However, thermoelectric performance of Mg 2.36 Zn 0.64 Sb 2 is still poor and it is mostly due to its large electrical resistivity. - Graphical abstract: The Mg atoms in Mg 3 Sb 2 were successfully substituted with Zn, with Zn going exclusively into the tetrahedral sites. Zn substitution increases the electrical conductivity in Mg 2.36 Zn 0.64 Sb 2 by closing the band gap. This change combined with a decrease in the thermal conductivity improves the ZT value

  16. Evolution of the vertebrate insulin receptor substrate (Irs) gene family.

    Science.gov (United States)

    Al-Salam, Ahmad; Irwin, David M

    2017-06-23

    Insulin receptor substrate (Irs) proteins are essential for insulin signaling as they allow downstream effectors to dock with, and be activated by, the insulin receptor. A family of four Irs proteins have been identified in mice, however the gene for one of these, IRS3, has been pseudogenized in humans. While it is known that the Irs gene family originated in vertebrates, it is not known when it originated and which members are most closely related to each other. A better understanding of the evolution of Irs genes and proteins should provide insight into the regulation of metabolism by insulin. Multiple genes for Irs proteins were identified in a wide variety of vertebrate species. Phylogenetic and genomic neighborhood analyses indicate that this gene family originated very early in vertebrae evolution. Most Irs genes were duplicated and retained in fish after the fish-specific genome duplication. Irs genes have been lost of various lineages, including Irs3 in primates and birds and Irs1 in most fish. Irs3 and Irs4 experienced an episode of more rapid protein sequence evolution on the ancestral mammalian lineage. Comparisons of the conservation of the proteins sequences among Irs paralogs show that domains involved in binding to the plasma membrane and insulin receptors are most strongly conserved, while divergence has occurred in sequences involved in interacting with downstream effector proteins. The Irs gene family originated very early in vertebrate evolution, likely through genome duplications, and in parallel with duplications of other components of the insulin signaling pathway, including insulin and the insulin receptor. While the N-terminal sequences of these proteins are conserved among the paralogs, changes in the C-terminal sequences likely allowed changes in biological function.

  17. Electrochemical studies of CNT/Si–SnSb nanoparticles for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Nithyadharseni, P. [Department of Physics, Bannari Amman Institute of Technology, Sathyamangalam 638402 (India); Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore); Reddy, M.V., E-mail: phymvvr@nus.edu.sg [Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore); Nalini, B., E-mail: lalin99@rediffmail.com [Department of Physics, Avinashilingam University for Women, Coimbatore 641043 (India); Ravindran, T.R. [Centre for Research in Nanotechnology, Karunya University, Coimbatore 641114 (India); Pillai, B.C.; Kalpana, M. [Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India); Chowdari, B.V.R. [Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore)

    2015-10-15

    Highlights: • Si added SnSb and CNT exhibits very low particle size of below 30 nm • A strong PL quenching due to the addition of Si to SnSb. • Electrochemical studies show CNT added SnSb shows good capacity retention. - Abstract: Nano-structured SnSb, SnSb–CNT, Si–SnSb and Si–SnSb–CNT alloys were synthesized from metal chlorides of Sn, Sb and Si via reductive co-precipitation technique using NaBH{sub 4} as reducing agent. The as prepared compounds were characterized by various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), Raman, Fourier transform infra-red (FTIR) and photoluminescence (PL) spectroscopy. The electrochemical performances of the compounds were characterized by galvanostatic cycling (GC) and cyclic voltammetry (CV). The Si–SnSb–CNT compound shows a high reversible capacity of 1200 mAh g{sup −1}. However, the rapid capacity fading was observed during cycling. In contrast, SnSb–CNT compound showed a high reversible capacity of 568 mAh g{sup −1} at 30th cycles with good cycling stability. The improved reversible capacity and cyclic performance of the SnSb–CNT compound could be attributed to the nanosacle dimension of SnSb particles and the structural advantage of CNTs.

  18. Leaching of Antimony (Sb)from Municipal Solid Waste Incineration (MSWI) Residues

    Energy Technology Data Exchange (ETDEWEB)

    Herrmann, Inga

    2004-07-01

    The mobility of antimony (Sb) in municipal solid waste incineration (MSWI) residues often exceeds the limit values stipulated by the European Union. As an ash treatment by washing is conceivable, this work investigated the Sb release from Swedish bottom ash and fly ash when mixed with water. The leaching experiments revealed the factors significantly (a = 0.05) affecting Sb release from the ashes. The following factors were investigated: Liquid to solid ratio (L/S), time, pH, carbonation (treatment with CO{sub 2}), ultrasonics and temperature. The data were evaluated using multiple linear regression (MLR). The impact of the factors could be quantified. The maximum Sb release calculated was 13 mg/kg DM for bottom ash and 51 mg/kg DM for fly ash. The derived models explained the observed data well. Nevertheless, the calculated values were subject to a high uncertainty. For bottom ash, a lowering of the Sb total content of approximately 22% could be achieved. If this also involves a sufficient lowering of the Sb mobility to meet EU limit values could not yet be assessed. Chemical equilibrium calculations were performed to explain the empirical results. However, no solid phases controlling Sb release from the ashes could be identified.

  19. Aluminum-centered tetrahedron-octahedron transition in advancing Al-Sb-Te phase change properties.

    Science.gov (United States)

    Xia, Mengjiao; Ding, Keyuan; Rao, Feng; Li, Xianbin; Wu, Liangcai; Song, Zhitang

    2015-02-24

    Group IIIA elements, Al, Ga, or In, etc., doped Sb-Te materials have proven good phase change properties, especially the superior data retention ability over popular Ge2Sb2Te5, while their phase transition mechanisms are rarely investigated. In this paper, aiming at the phase transition of Al-Sb-Te materials, we reveal a dominant rule of local structure changes around the Al atoms based on ab initio simulations and nuclear magnetic resonance evidences. By comparing the local chemical environments around Al atoms in respective amorphous and crystalline Al-Sb-Te phases, we believe that Al-centered motifs undergo reversible tetrahedron-octahedron reconfigurations in phase transition process. Such Al-centered local structure rearrangements significantly enhance thermal stability of amorphous phase compared to that of undoped Sb-Te materials, and facilitate a low-energy amorphization due to the weak links among Al-centered and Sb-centered octahedrons. Our studies may provide a useful reference to further understand the underlying physics and optimize performances of all IIIA metal doped Sb-Te phase change materials, prompting the development of NOR/NAND Flash-like phase change memory technology.

  20. Electronic structure and STM imaging of the KBr-InSb interface

    Energy Technology Data Exchange (ETDEWEB)

    Ciochoń, Piotr, E-mail: ciochon.piotr@gmail.com; Olszowska, Natalia; Kołodziej, Jacek J.

    2017-07-01

    Highlights: • The structure of the InSb (001) surface covered with thin KBr layers is reported. • KBr growth does not perturb strongly the structure of a clean InSb surface. • A model of the system with KBr treated as a thin dielectric layer is proposed. • The atomic structure of the KBr-InSb interface is directly imaged using STM. - Abstract: We study the properties of the InSb (001) surface covered with ultrathin KBr films, with a thickness of 1–4 ML. KBr deposition does not strongly perturb the crystallographic structure of the InSb surface and the electronic structure of the substrate also remains unaffected by the overlayer. A simple model of the studied system is proposed, in which a thin KBr layer is treated as a dielectric film, modifying potential barrier for the electrons tunneling to/from the InSb substrate. Apparent step heights on the KBr film, measured using scanning tunneling microscope (STM), agree well with the predictions of the model and the atomically-resolved STM images show the structure of the InSb-KBr interface. Our results demonstrate that STM may be used as a tool for investigations of the semiconductor–insulator interfaces.

  1. Study of interatomic potential and thermal structural properties of β-Zn4Sb3

    International Nuclear Information System (INIS)

    Li, Guodong; Li, Yao; Liu, Lisheng; Zhang, Qingjie; Zhai, Pengcheng

    2012-01-01

    Highlights: ► The multi-body interatomic potentials of various models of β-Zn 4 Sb 3 have been developed to describe atomic interactions. ► The radial distribution function shows that the 10% vacancy of Zn site leads to the disorder of β-Zn 4 Sb 3 . ► The 10% vacancy of Zn site is the main cause of the exceptional low thermal conductivity. -- Abstract: Previous experimental research shows that the disordered Zn atoms in β-Zn 4 Sb 3 may have an important influence on its exceptionally low thermal conductivity and easily occurred phase transition. So the present work aims to study the influence of disordered Zn atoms on thermodynamics properties of β-Zn 4 Sb 3 by using molecular dynamics (MD) method. Firstly, based on first principles calculation and experimental results, the interatomic potentials of β-Zn 4 Sb 3 and MD analysis method are established, and the feasibility is verified. Then, the influence of disordered Zn atoms on thermal conductivity of β-Zn 4 Sb 3 is studied in detail. The simulation results indicate that the 10% vacant Zn atoms is the main reason for the exceptionally low thermal conductivity of β-Zn 4 Sb 3 , and it seems that the interstitial Zn atoms have little effect on its thermal conductivity.

  2. First-principles study of Sb adsorption on Ag(1 1 0)(2 x 2)

    International Nuclear Information System (INIS)

    Nie, J.L.; Xiao, H.Y.; Zu, X.T.; Gao Fei

    2006-01-01

    The adsorption of antimony atom on the Ag(1 1 0) surface has been studied within the density functional theory framework. It was turned out that Sb-Ag surface alloy was formed in which Sb atoms substitute Ag atom in the outermost layer and subsurface site absorption was not preferred, suggesting that Sb is well segregated to the surface. Geometric analysis showed that rumpling between substitutional Sb and Ag in the alloy surface is negligible. These results are found to agree well with the experimental finding of Nascimento et al. [Surf. Sci. 572 (2004) 337]. In addition, investigation of the diffusion of Ag atom on bare and Sb-covered Ag(1 1 0) surface showed that Ag adatoms will jump along the so call in-channel direction and Sb substitution has little effect on the diffusion of Ag adatoms on Ag(1 1 0) surface. Such diffusion behavior was found to be different from that of Ag adatoms on Ag(1 1 1) surface, where the diffusion energy barrier was reported to be significantly increased upon Sb substitution [Phys. Rev. Lett. 73 (1993) 2437

  3. Spin orientations of the spin-half Ir(4+) ions in Sr3NiIrO6, Sr2IrO4, and Na2IrO3: Density functional, perturbation theory, and Madelung potential analyses.

    Science.gov (United States)

    Gordon, Elijah E; Xiang, Hongjun; Köhler, Jürgen; Whangbo, Myung-Hwan

    2016-03-21

    The spins of the low-spin Ir(4+) (S = 1/2, d(5)) ions at the octahedral sites of the oxides Sr3NiIrO6, Sr2IrO4, and Na2IrO3 exhibit preferred orientations with respect to their IrO6 octahedra. We evaluated the magnetic anisotropies of these S = 1/2 ions on the basis of density functional theory (DFT) calculations including spin-orbit coupling (SOC), and probed their origin by performing perturbation theory analyses with SOC as perturbation within the LS coupling scheme. The observed spin orientations of Sr3NiIrO6 and Sr2IrO4 are correctly predicted by DFT calculations, and are accounted for by the perturbation theory analysis. As for the spin orientation of Na2IrO3, both experimental studies and DFT calculations have not been unequivocal. Our analysis reveals that the Ir(4+) spin orientation of Na2IrO3 should have nonzero components along the c- and a-axis directions. The spin orientations determined by DFT calculations are sensitive to the accuracy of the crystal structures employed, which is explained by perturbation theory analyses when interactions between adjacent Ir(4+) ions are taken into consideration. There are indications implying that the 5d electrons of Na2IrO3 are less strongly localized compared with those of Sr3NiIrO6 and Sr2IrO4. This implication was confirmed by showing that the Madelung potentials of the Ir(4+) ions are less negative in Na2IrO3 than in Sr3NiIrO6 and Sr2IrO4. Most transition-metal S = 1/2 ions do have magnetic anisotropies because the SOC induces interactions among their crystal-field split d-states, and the associated mixing of the states modifies only the orbital parts of the states. This finding cannot be mimicked by a spin Hamiltonian because this model Hamiltonian lacks the orbital degree of freedom, thereby leading to the spin-half syndrome. The spin-orbital entanglement for the 5d spin-half ions Ir(4+) is not as strong as has been assumed.

  4. The detectability of cracks using sonic IR

    Science.gov (United States)

    Morbidini, Marco; Cawley, Peter

    2009-05-01

    This paper proposes a methodology to study the detectability of fatigue cracks in metals using sonic IR (also known as thermosonics). The method relies on the validation of simple finite-element thermal models of the cracks and specimens in which the thermal loads have been defined by means of a priori measurement of the additional damping introduced in the specimens by each crack. This estimate of crack damping is used in conjunction with a local measurement of the vibration strain during ultrasonic excitation to retrieve the power released at the crack; these functions are then input to the thermal model of the specimens to find the resulting temperature rises (sonic IR signals). The method was validated on mild steel beams with two-dimensional cracks obtained in the low-cycle fatigue regime as well as nickel-based superalloy beams with three-dimensional "thumbnail" cracks generated in the high-cycle fatigue regime. The equivalent 40kHz strain necessary to obtain a desired temperature rise was calculated for cracks in the nickel superalloy set, and the detectability of cracks as a function of length in the range of 1-5mm was discussed.

  5. Irène Jacob visits CERN

    CERN Document Server

    CERN Bulletin

    2010-01-01

    French actress Irène Jacob, the daughter of physicist Maurice Jacob, visited the ATLAS and CMS control rooms on Monday 17 May together with Italian theatre actor-director Pippo Delbono, in search of inspiration for a short film. The film will be screened at the “nuit des particules” event accompanying this year’s ICHEP.   Pippo Delbono et Irène Jacob discussing their project. “La nuit des particules” (night of the particles) is an event open to the general public that is being organised for the evening of Tuesday, 27 July, to accompany the 35th International Conference on High Energy Physics (ICHEP). ICHEP is a major highlight in every physicist’s calendar, and this year’s edition is being held in Paris from 22 to 28 July. The short film will be screened during the evening, which will include a lecture and a show at the legendary Parisian cinema Le Grand Rex, with a colossal seating capacity of 2 700 spe...

  6. Subsolidus phase relations of the SrO–SbOx–CuO system at 1140K in air

    DEFF Research Database (Denmark)

    Grivel, J.-C.; Norby, Poul; Andersen, Niels Hessel

    2014-01-01

    The subsolidus phase relations of the SrO–SbOx–CuO system were investigated in air. The samples were equilibrated at 1140K. Under these conditions, 7 binary oxide phases are stable: Sr2CuO3, SrCuO2, Sr14Cu24O41−δ, CuSb2O6, SrSb2O6, Sr2Sb2O7 and Sr7Sb2O12. The ternary section contains 10 three...

  7. MBE growth and characterization of GaAs1-x Sb x epitaxial layers on Si (0 0 1) substrates

    International Nuclear Information System (INIS)

    Toda, T.; Nishino, F.; Kato, A.; Kambayashi, T.; Jinbo, Y.; Uchitomi, N.

    2006-01-01

    We investigated the growth of GaAs 1- x Sb x (x=1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), and micro-Raman scattering analysis. We confirmed that GaAs 1- x Sb x layers have been successfully grown on Si substrates by introducing AlSb layers

  8. Solution-Processed hybrid Sb2 S3 planar heterojunction solar cell

    Science.gov (United States)

    Huang, Wenxiao; Borazan, Ismail; Carroll, David

    Thin-film solar cells based on inorganic absorbers permit a high efficiency and stability. Among or those absorber candidates, recently Sb2S3 has attracted extensive attention because of its suitable band gap (1.5eV ~1.7 eV) , strong optical absorption, low-cost and earth-abundant constituents. Currently high-efficiency Sb2S3 solar cells have absorber layer deposited on nanostructured TiO2 electrodes in combination with organic hole transport material (HTM) on top. However it's challenging to fill the nanostructured TiO2 layer with Sb2S3 and subsequently by HTM, this leads to uncovered surface permits charge recombination. And the existing of Sb2S3/TiO2/HTM triple interface will enhance the recombination due to the surface trap state. Therefore, a planar junction cell would not only have simpler structure with less steps to fabricate but also ideally also have a higher open circuit voltage because of less interface carrier recombination. By far there is limited research focusing on planar Sb2S3 solar cell, so the feasibility is still unclear. Here, we developed a low-toxic solution method to fabricate Sb2S3 thin film solar cell, then we studied the morphology of the Sb2S3 layer and its impact to the device performance. The best device with a structure of FTO/TiO2/Sb2S3/P3HT/Ag has PCE over 5% which is similar or higher than yet the best nanostructure devices with the same HTM. Furthermore, based on solution engineering and surface modification, we improved the Sb2S3 film quality and achieved a record PCE. .

  9. HOMA1-IR and HOMA2-IR indexes in identifying insulin resistance and metabolic syndrome: Brazilian Metabolic Syndrome Study (BRAMS).

    Science.gov (United States)

    Geloneze, Bruno; Vasques, Ana Carolina Junqueira; Stabe, Christiane França Camargo; Pareja, José Carlos; Rosado, Lina Enriqueta Frandsen Paez de Lima; Queiroz, Elaine Cristina de; Tambascia, Marcos Antonio

    2009-03-01

    To investigate cut-off values for HOMA1-IR and HOMA2-IR to identify insulin resistance (IR) and metabolic syndrome (MS), and to assess the association of the indexes with components of the MS. Nondiabetic subjects from the Brazilian Metabolic Syndrome Study were studied (n = 1,203, 18 to 78 years). The cut-off values for IR were determined from the 90th percentile in the healthy group (n = 297) and, for MS, a ROC curve was generated for the total sample. In the healthy group, HOMA-IR indexes were associated with central obesity, triglycerides and total cholesterol (p 2.7 and HOMA2-IR > 1.8; and, for MS were: HOMA1-IR > 2.3 (sensitivity: 76.8%; specificity: 66.7%) and HOMA2-IR > 1.4 (sensitivity: 79.2%; specificity: 61.2%). The cut-off values identified for HOMA1-IR and HOMA2-IR indexes have a clinical and epidemiological application for identifying IR and MS in Westernized admixtured multi-ethnic populations.

  10. Distinct signalling properties of insulin receptor substrate (IRS)-1 and IRS-2 in mediating insulin/IGF-1 action

    DEFF Research Database (Denmark)

    Rabiee, Atefeh; Krüger, Marcus; Ardenkjær-Larsen, Jacob

    2018-01-01

    Insulin/IGF-1 action is driven by a complex and highly integrated signalling network. Loss-of-function studies indicate that the major insulin/IGF-1 receptor substrate (IRS) proteins, IRS-1 and IRS-2, mediate different biological functions in vitro and in vivo, suggesting specific signalling...... properties despite their high degree of homology. To identify mechanisms contributing to the differential signalling properties of IRS-1 and IRS-2 in the mediation of insulin/IGF-1 action, we performed comprehensive mass spectrometry (MS)-based phosphoproteomic profiling of brown preadipocytes from wild type......, IRS-1-/-and IRS-2-/-mice in the basal and IGF-1-stimulated states. We applied stable isotope labeling by amino acids in cell culture (SILAC) for the accurate quantitation of changes in protein phosphorylation. We found ~10% of the 6262 unique phosphorylation sites detected to be regulated by IGF-1...

  11. Selective C--C coupling of ir-ethene and ir-carbenoid radicals

    NARCIS (Netherlands)

    Dzik, W.I.; Reek, J.N.H.; de Bruin, B.

    2008-01-01

    The reactivity of the paramagnetic iridium(II) complex [IrII(ethene)(Me3tpa)]2+ (1) (Me3tpa=N,N,N-tris(6-methyl-2-pyridylmethyl) amine) towards the diazo compounds ethyl diazoacetate (EDA) and trimethylsilyldiazomethane (TMSDM) was investigated. The reaction with EDA gave rise to selective CC bond

  12. Improvenments in environmental trace analysis by GC-IR and LC-IR.

    NARCIS (Netherlands)

    Visser, T.; Vredenbregt, M.J.; Jong, A.P.J.M.; Somsen, G.W.; Hankemeier, T.; Velthorst, N.H.; Gooijer, C.; Brinkman, U.A.T.

    1997-01-01

    Research has been carried out to enlarge the potential of infrared (IR) spectrometry as a detector in gas and liquid chromatography (GC and LC). The study has been directed to applications in environmental analysis. Examples of recently obtained results are presented. The analyte detectability of

  13. Variation of the refractive index for the active layer of the double heterostructure GaAlAsSb/GaInAsSb/GaAlAsSb in injected mode

    International Nuclear Information System (INIS)

    Mohou, M.A.

    1995-01-01

    This work reports on the influence of the injected current on the refractive index in the active layer of GaInAsSb/GaAlAsSb laser diodes. These diodes present at threshold a full beam width at half power θ perpendicular of about 52 deg. C. The fluctuation of the refractive index caused by the injection of free carriers was studied on the basis of the evolution of θ perpendicular as a function of the injected current. It was shown that the inversion of the population which follows the rising of the gain, causes a slight decrease of the refractive index. 12 refs, 5 figs

  14. Data and analyses of phase relations in the Ce-Fe-Sb ternary system.

    Science.gov (United States)

    Zhu, Daiman; Xu, Chengliang; Li, Changrong; Guo, Cuiping; Zheng, Raowen; Du, Zhenmin; Li, Junqin

    2018-02-01

    These data and analyses support the research article "Experimental study on phase relations in the Ce-Fe-Sb ternary system" Zhu et al. (2017) [1]. The data and analyses presented here include the experimental results of XRD, SEM and EPMA for the determination of the whole liquidus projection and the isothermal section at 823 K in the Ce-Fe-Sb system. All the results enable the understanding of the constituent phases and the solidification processes of the as-cast alloys as well as the phase relations and the equilibrium regions at 823 K in the Ce-Fe-Sb ternary system over the entire composition.

  15. Effect of N incorporation on the characteristics of InSbN P–N diodes

    International Nuclear Information System (INIS)

    Lim, K.P.; Pham, H.T.; Yoon, S.F.; Tan, K.H.

    2012-01-01

    We report on the effect of N incorporation in the characteristics of the 2 μm thick InSbN photoabsorption layer of a p–n diode grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. As compared to N free InSb layer, the absorption wavelength extends to near 9 μm. On the other hand, high reverse dark current and series resistances are observed in the electrical characteristics of the InSbN diode which are contributed with the presence of planar growth defects. These results will be useful to those working on midinfrared photodetectors.

  16. Standardization of 125 Sb in equilibrium non-equilibrium situations with 125m Te

    International Nuclear Information System (INIS)

    Rodriguez Barquero, L.; Jimenez de Mingo, A.; Grau Carles, A.

    1997-10-01

    We study the stability of ''125 Sb in the following scintillators: HiSafeIII''TM, Insta- Gel reg s ign Plus and '' Ultima-Gold'' TM. Since ''125 m Te requires more than one year to reach the secular equilibrium with ''125 Sb, we cannot be sure, for a given sample, whether equilibrium is reached or not. In this report we present a new procedure that permits one calibrate mixtures of ''125 Sb+''125 m Te out of the equilibrium. The steps required for the radiochemical separation of the components are indicated. Finally, we study the evolution of counting rate when column yields are less than 100%. (Author)

  17. Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

    Science.gov (United States)

    Huang, Ruomeng; Kissling, Gabriela P.; Jolleys, Andrew; Bartlett, Philip N.; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. `Kees'

    2015-11-01

    We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.

  18. Mineralogical and geochemical study of contaminated soils on abandoned Sb deposits Dubrava and Poproc

    International Nuclear Information System (INIS)

    Klimko, T.; Jurkovic, L.

    2010-01-01

    In this paper we present initial results of mineralogical and geochemical study of secondary mineral phases, often with a high content of Sb and As, resulting from oxidation of sulphide minerals in the soil environment on two, now abandoned Sb deposits. Dubrava deposit is situated on the northern slopes of the Dumbier Low Tatras and Poproc deposit is located in the eastern part of Spis-Gemer Rudohorie. Both studied sites were in the past (second half of 20 th century) significant producers of antimony ore and Dubrava deposit belonged to medium-sized Sb deposits in the world.

  19. Performance evaluation of thermophotovoltaic GaSb cell technology in high temperature waste heat

    Science.gov (United States)

    Utlu, Z.; Önal, B. S.

    2018-02-01

    In this study, waste heat was evaluated and examined by means of thermophotovoltaic systems with the application of energy production potential GaSb cells. The aim of our study is to examine GaSb cell technology at high temperature waste heat. The evaluation of the waste heat to be used in the system is designed to be used in the electricity, industry and iron and steel industry. Our work is research. Graphic analysis is done with Matlab program. The high temperature waste heat graphs applied on the GaSb cell are in the results section. Our study aims to provide a source for future studies.

  20. Examination of thermophotovoltaic GaSb cell technology in low and medium temperatures waste heat

    Science.gov (United States)

    Utlu, Z.; Önal, B. S.

    2018-02-01

    In this study, waste heat was evaluated and examined by means of thermophotovoltaic systems with the application of energy production potential GaSb cells. The aim of our study is to examine GaSb cell technology at low and medium temperature waste heat. The evaluation of the waste heat to be used in the system is designed to be used in the electricity, industry and iron and steel industry. Our work is research. Graphic analysis is done with Matlab program. The low and medium temperature waste heat graphs applied on the GaSb cell are in the results section. Our study aims to provide a source for future studies.

  1. Sb-SnO2-Nanosized-Based Resistive Sensors for NO2 Detection

    Directory of Open Access Journals (Sweden)

    T. Krishnakumar

    2009-01-01

    Full Text Available A study over Sb-promoted tin oxide nanopowders for sensing applications is reported. SnO2 nanopowders pure and promoted with 5 wt% of antimony were prepared by wet chemical methods and widely characterized by TEM, XRD, and XPS techniques. Thick film resistive sensors were fabricated by depositing the synthesized nanopowders by drop-coating on interdigited alumina substrates. The sensing characteristics of the pure SnO2 and Sb-promoted sensors for the monitoring of trace level of NO2 were studied. The response of the sensors to water vapor was also investigated, revealing that Sb acts favorably eliminating the interference of humidity.

  2. Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhen-Long [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Ma, Wen-Hai [School of Physical Education, Henan University, Kaifeng 475004 (China); Mao, Yan-Li, E-mail: ylmao1@163.com [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)

    2014-09-07

    In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

  3. Electronic structure, local magnetism, and spin-orbit effects of Ir(IV)-, Ir(V)-, and Ir(VI)-based compounds

    Energy Technology Data Exchange (ETDEWEB)

    Laguna-Marco, M. A.; Kayser, P.; Alonso, J. A.; Martínez-Lope, M. J.; van Veenendaal, M.; Choi, Y.; Haskel, D.

    2015-06-01

    Element- and orbital-selective x-ray absorption and magnetic circular dichroism measurements are carried out to probe the electronic structure and magnetism of Ir 5d electronic states in double perovskite Sr2MIrO6 (M = Mg, Ca, Sc, Ti, Ni, Fe, Zn, In) and La2NiIrO6 compounds. All the studied systems present a significant influence of spin-orbit interactions in the electronic ground state. In addition, we find that the Ir 5d local magnetic moment shows different character depending on the oxidation state despite the net magnetization being similar for all the compounds. Ir carries an orbital contribution comparable to the spin contribution for Ir4+ (5d(5)) and Ir5+ (5d(4)) oxides, whereas the orbital contribution is quenched for Ir6+ (5d(3)) samples. Incorporation of a magnetic 3d atom allows getting insight into the magnetic coupling between 5d and 3d transition metals. Together with previous susceptibility and neutron diffractionmeasurements, the results indicate that Ir carries a significant local magnetic moment even in samples without a 3d metal. The size of the (small) net magnetization of these compounds is a result of predominant antiferromagnetic interactions between local moments coupled with structural details of each perovskite structure

  4. Superlattice-like SnSb{sub 4}/Ga{sub 3}Sb{sub 7} thin films for ultrafast switching phase-change memory application

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yifeng [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Jiangsu University of Technology, School of Mathematics and Physics, Changzhou (China); He, Zifang; Zhai, Jiwei [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Wu, Pengzhi; Lai, Tianshu [Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Guangzhou (China); Song, Sannian; Song, Zhitang [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

    2015-11-15

    The carrier concentration of Sb-rich phase SnSb{sub 4}, Ga{sub 3}Sb{sub 7} and superlattice-like [SnSb{sub 4}(3.5 nm)/Ga{sub 3}Sb{sub 7}(4 nm)]{sub 7} (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. (orig.)

  5. Influence of the nucleobase on the physicochemical characteristics and biological activities of Sb{sup V}-ribonucleoside complexes

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, Claudio S.; Demicheli, Cynthia, E-mail: demichel@netuno.lcc.ufmg.b [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Quimica; Rocha, Iara C.M. da; Melo, Maria N. [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Parasitologia; Monte Neto, Rubens L.; Frezard, Frederic [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Fisiologia e Biofisica

    2010-07-01

    The influence of the nucleobase (uracyl, U; cytosine, C; adenine, A; guanine, G) on the physicochemical characteristics and in vitro biological activities of Sb{sup V}-ribonucleoside complexes has been investigated. The 1:1 Sb-U and Sb-C complexes were characterized by NMR and ESI-MS spectroscopies and elemental analysis. The stability constant and the apparent association and dissociation rate constants of 1:1 Sb{sup V}-U, Sb{sup V}-C and Sb{sup V}-A complexes were determined. Although Sb{sup V} most probably binds via oxygen atoms to the same 2' and 3' positions in the different nucleosides, the ribose conformational changes and the physicochemical characteristics of the complex depend on the nucleobase. The nucleobase had a strong influence on the cytotoxicity against macrophages and the antileishmanial activity of the Sb{sup V}-ribonucleoside complexes. The Sb{sup V}-purine complexes were more cytotoxic and more effective against Leishmania chagasi than the Sb{sup V}-pyrimidine complexes, supporting the model that the interaction of Sb{sup V} with purine nucleosides may mediate the antileishmanial activity of pentavalent antimonial drugs. (author)

  6. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

    International Nuclear Information System (INIS)

    Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

    2012-01-01

    We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

  7. The Introduction of an Undergraduate Interventional Radiology (IR) Curriculum: Impact on Medical Student Knowledge and Interest in IR

    International Nuclear Information System (INIS)

    Shaikh, M.; Shaygi, B.; Asadi, H.; Thanaratnam, P.; Pennycooke, K.; Mirza, M.; Lee, M.

    2016-01-01

    IntroductionInterventional radiology (IR) plays a vital role in modern medicine, with increasing demand for services, but with a shortage of experienced interventionalists. The aim of this study was to determine the impact of a recently introduced IR curriculum on perception, knowledge, and interest of medical students regarding various aspects of IR.MethodsIn 2014, an anonymous web-based questionnaire was sent to 309 4th year medical students in a single institution within an EU country, both before and after delivery of a 10-h IR teaching curriculum.ResultsSeventy-six percent (236/309) of the respondents participated in the pre-IR module survey, while 50 % (157/309) responded to the post-IR module survey. While 62 % (147/236) of the respondents reported poor or no knowledge of IR compared to other medical disciplines in the pre-IR module survey, this decreased to 17 % (27/157) in the post-IR module survey. The correct responses regarding knowledge of selected IR procedures improved from 70 to 94 % for venous access, 78 to 99 % for uterine fibroid embolization, 75 to 97 % for GI bleeding embolization, 60 to 92 % for trauma embolization, 71 to 92 % for tumor ablation, and 81 to 94 % for angioplasty and stenting in peripheral arterial disease. With regard to knowledge of IR clinical roles, responses improved from 42 to 59 % for outpatient clinic review of patients and having inpatient beds, 63–76 % for direct patient consultation, and 43–60 % for having regular ward rounds. The number of students who would consider a career in IR increased from 60 to 73 %.ConclusionDelivering an undergraduate IR curriculum increased the knowledge and understanding of various aspects of IR and also the general enthusiasm for pursuing this specialty as a future career choice.

  8. The Introduction of an Undergraduate Interventional Radiology (IR) Curriculum: Impact on Medical Student Knowledge and Interest in IR

    Energy Technology Data Exchange (ETDEWEB)

    Shaikh, M. [Bradford Royal Infirmary, Department of Radiology, Bradford Teaching Hospital Foundation Trust (United Kingdom); Shaygi, B. [Royal Devon and Exeter Hospital, Interventional Radiology Department (United Kingdom); Asadi, H., E-mail: asadi.hamed@gmail.com; Thanaratnam, P.; Pennycooke, K.; Mirza, M.; Lee, M., E-mail: mlee@rcsi.ie [Beaumont Hospital, Interventional Radiology Service, Department of Radiology (Ireland)

    2016-04-15

    IntroductionInterventional radiology (IR) plays a vital role in modern medicine, with increasing demand for services, but with a shortage of experienced interventionalists. The aim of this study was to determine the impact of a recently introduced IR curriculum on perception, knowledge, and interest of medical students regarding various aspects of IR.MethodsIn 2014, an anonymous web-based questionnaire was sent to 309 4th year medical students in a single institution within an EU country, both before and after delivery of a 10-h IR teaching curriculum.ResultsSeventy-six percent (236/309) of the respondents participated in the pre-IR module survey, while 50 % (157/309) responded to the post-IR module survey. While 62 % (147/236) of the respondents reported poor or no knowledge of IR compared to other medical disciplines in the pre-IR module survey, this decreased to 17 % (27/157) in the post-IR module survey. The correct responses regarding knowledge of selected IR procedures improved from 70 to 94 % for venous access, 78 to 99 % for uterine fibroid embolization, 75 to 97 % for GI bleeding embolization, 60 to 92 % for trauma embolization, 71 to 92 % for tumor ablation, and 81 to 94 % for angioplasty and stenting in peripheral arterial disease. With regard to knowledge of IR clinical roles, responses improved from 42 to 59 % for outpatient clinic review of patients and having inpatient beds, 63–76 % for direct patient consultation, and 43–60 % for having regular ward rounds. The number of students who would consider a career in IR increased from 60 to 73 %.ConclusionDelivering an undergraduate IR curriculum increased the knowledge and understanding of various aspects of IR and also the general enthusiasm for pursuing this specialty as a future career choice.

  9. IR-360 nuclear power plant safety functions and component classification

    Energy Technology Data Exchange (ETDEWEB)

    Yousefpour, F., E-mail: fyousefpour@snira.co [Management of Nuclear Power Plant Construction Company (MASNA) (Iran, Islamic Republic of); Shokri, F.; Soltani, H. [Management of Nuclear Power Plant Construction Company (MASNA) (Iran, Islamic Republic of)

    2010-10-15

    The IR-360 nuclear power plant as a 2-loop PWR of 360 MWe power generation capacity is under design in MASNA Company. For design of the IR-360 structures, systems and components (SSCs), the codes and standards and their design requirements must be determined. It is a prerequisite to classify the IR-360 safety functions and safety grade of structures, systems and components correctly for selecting and adopting the suitable design codes and standards. This paper refers to the IAEA nuclear safety codes and standards as well as USNRC standard system to determine the IR-360 safety functions and to formulate the principles of the IR-360 component classification in accordance with the safety philosophy and feature of the IR-360. By implementation of defined classification procedures for the IR-360 SSCs, the appropriate design codes and standards are specified. The requirements of specific codes and standards are used in design process of IR-360 SSCs by design engineers of MASNA Company. In this paper, individual determination of the IR-360 safety functions and definition of the classification procedures and roles are presented. Implementation of this work which is described with example ensures the safety and reliability of the IR-360 nuclear power plant.

  10. IR-360 nuclear power plant safety functions and component classification

    International Nuclear Information System (INIS)

    Yousefpour, F.; Shokri, F.; Soltani, H.

    2010-01-01

    The IR-360 nuclear power plant as a 2-loop PWR of 360 MWe power generation capacity is under design in MASNA Company. For design of the IR-360 structures, systems and components (SSCs), the codes and standards and their design requirements must be determined. It is a prerequisite to classify the IR-360 safety functions and safety grade of structures, systems and components correctly for selecting and adopting the suitable design codes and standards. This paper refers to the IAEA nuclear safety codes and standards as well as USNRC standard system to determine the IR-360 safety functions and to formulate the principles of the IR-360 component classification in accordance with the safety philosophy and feature of the IR-360. By implementation of defined classification procedures for the IR-360 SSCs, the appropriate design codes and standards are specified. The requirements of specific codes and standards are used in design process of IR-360 SSCs by design engineers of MASNA Company. In this paper, individual determination of the IR-360 safety functions and definition of the classification procedures and roles are presented. Implementation of this work which is described with example ensures the safety and reliability of the IR-360 nuclear power plant.

  11. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  12. Influence of weak magnetic field and tartrate on the oxidation and sequestration of Sb(III) by zerovalent iron: Batch and semi-continuous flow study.

    Science.gov (United States)

    Fan, Peng; Sun, Yuankui; Qiao, Junlian; Lo, Irene M C; Guan, Xiaohong

    2018-02-05

    The influence of weak magnetic field (WMF) and tartrate on the oxidation and sequestration of Sb(III) by zerovalent iron (ZVI) was investigated with batch and semi-continuous reactors. The species analysis of antinomy in aqueous solution and solid precipitates implied that both Sb(III) adsorption preceding its conversion to Sb(V) in solid phase and Sb(III) oxidation to Sb(V) preceding its adsorption in aqueous phase occurred in the process of Sb(III) sequestration by ZVI. The application of WMF greatly increased the rate constants of Sb tot (total Sb) and Sb(III) disappearance during Sb(III)-tartrate and uncomplexed-Sb(III) sequestration by ZVI. The enhancing effect of WMF was primarily due to the accelerated ZVI corrosion in the presence of WMF, as evidenced by the influence of WMF on the change of solution and solid properties with reaction. However, tartrate greatly retarded Sb removal by ZVI. It was because tartrate inhibited ZVI corrosion, competed with Sb(III) and Sb(V) for the active surface sites, increased the negative surface charge of the generated iron (hydr)oxides due to its adsorption, and formed soluble complexes with Fe(III). The positive effect of WMF on Sb(III)-tartrate and uncomplexed-Sb(III) removal by ZVI was also verified with a magnetic semi-continuous reactor. Copyright © 2017 Elsevier B.V. All rights reserved.

  13. Reading handprinted addresses on IRS tax forms

    Science.gov (United States)

    Ramanaprasad, Vemulapati; Shin, Yong-Chul; Srihari, Sargur N.

    1996-03-01

    The hand-printed address recognition system described in this paper is a part of the Name and Address Block Reader (NABR) system developed by the Center of Excellence for Document Analysis and Recognition (CEDAR). NABR is currently being used by the IRS to read address blocks (hand-print as well as machine-print) on fifteen different tax forms. Although machine- print address reading was relatively straightforward, hand-print address recognition has posed some special challenges due to demands on processing speed (with an expected throughput of 8450 forms/hour) and recognition accuracy. We discuss various subsystems involved in hand- printed address recognition, including word segmentation, word recognition, digit segmentation, and digit recognition. We also describe control strategies used to make effective use of these subsystems to maximize recognition accuracy. We present system performance on 931 address blocks in recognizing various fields, such as city, state, ZIP Code, street number and name, and personal names.

  14. Multichannel Dynamic Fourier-Transform IR Spectrometer

    Science.gov (United States)

    Balashov, A. A.; Vaguine, V. A.; Golyak, Il. S.; Morozov, A. N.; Khorokhorin, A. I.

    2017-09-01

    A design of a multichannel continuous scan Fourier-transform IR spectrometer for simultaneous recording and analysis of the spectral characteristics of several objects is proposed. For implementing the design, a multi-probe fiber is used, constructed from several optical fibers connected into a single optical connector and attached at the output of the interferometer. The Fourier-transform spectrometer is used as a signal modulator. Each fiber is individually mated with an investigated sample and a dedicated radiation detector. For the developed system, the radiation intensity of the spectrometer is calculated from the condition of the minimum spectral resolution and parameters of the optical fibers. Using the proposed design, emission spectra of a gas-discharge neon lamp have been recorded using a single fiber 1 mm in diameter with a numerical aperture NA = 0.22.

  15. Camouflage in thermal IR: spectral design

    Science.gov (United States)

    Pohl, Anna; Fagerström, Jan; Kariis, Hans; Lindell, Roland; Hallberg, Tomas; Högström, Herman

    2016-10-01

    In this work a spectral designed coating from SPECTROGON is evaluated. Spectral design in this case means that the coating has a reflectivity equal to one at 3-5 and 8-12 microns were sensors operate and a much lower reflectivity in the other wave length regions. Three boxes are evaluated: one metallic, one black-body and one with a spectral designed surface, all with a 15 W radiator inside the box. It is shown that the box with the spectral designed surface can combine the two good characteristics of the other boxes: low signature from the metallic box and reasonable inside temperature from the black-body box. The measurements were verified with calculations using RadThermIR.

  16. Studies of IR-screening smoke clouds

    Energy Technology Data Exchange (ETDEWEB)

    Cudzilo, S. [Military Univ. of Technology, Warsaw (Poland)

    2001-02-01

    This paper contains some results of research on the IR-screening capability of smoke clouds generated during the combustion process of varied pyrotechnic formulations. The smoke compositions were made from some oxygen or oxygen-free mixtures containing metal and chloroorganic compounds or mixtures based on red phosphorus. The camouflage effectiveness of clouds generated by these formulations was investigated under laboratory conditions with an infrared camera. The technique employed enables determination of radiant temperature distributions in a smoke cloud treated as an energy equivalent of a grey body emission. The results of the analysis of thermographs from the camera were the basis on which the mixtures producing screens of the highest countermeasure for thermal imaging systems have been chosen. (orig.)

  17. Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

    Science.gov (United States)

    Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H.; Kühne, Thomas D.; Bernasconi, Marco

    2016-05-01

    We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge2Sb2Te5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

  18. Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

    International Nuclear Information System (INIS)

    Gabardi, Silvia; Caravati, Sebastiano; Bernasconi, Marco; Los, Jan H.; Kühne, Thomas D.

    2016-01-01

    We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In 3 SbTe 2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge 2 Sb 2 Te 5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

  19. Behavior of GaSb (100) and InSb (100) surfaces in the presence of H{sub 2}O{sub 2} in acidic and basic cleaning solutions

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr

    2017-03-31

    Highlights: • Surface behavior of GaSb and InSb was investigated in acidic and basic solutions. • H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic hydrochloric acid/hydrogen peroxide mixture (HPM) solution. • GaSb and InSb surfaces were hardly oxidized in basic ammonium hydroxide/hydrogen peroxide mixture (APM) solution in the presence of H{sub 2}O{sub 2}. • The effect of dilution of APM solution on the oxidation of the InSb surface was minimal. • Surface characteristics of GaSb and InSb in HPM and APM solutions are mainly determined by the behaviors of the group III elements rather than the group V element. - Abstract: Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H{sub 2}O{sub 2} because gallium and indium are in the thermodynamically stable forms of H{sub 2}GaO{sub 3}{sup −} and InO{sub 2}{sup −}, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H{sub 2}O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of InSb

  20. Development of Cytoplasmic Male Sterile IR24 and IR64 Using CW-CMS/Rf17 System.

    Science.gov (United States)

    Toriyama, Kinya; Kazama, Tomohiko

    2016-12-01

    A wild-abortive-type (WA) cytoplasmic male sterility (CMS) has been almost exclusively used for breeding three-line hybrid rice. Many indica cultivars are known to carry restorer genes for WA-CMS lines and cannot be used as maintainer lines. Especially elite indica cultivars IR24 and IR64 are known to be restorer lines for WA-CMS lines, and are used as male parents for hybrid seed production. If we develop CMS IR24 and CMS IR64, the combination of F1 pairs in hybrid rice breeding programs will be greatly broadened. For production of CMS lines and restorer lines of IR24 and IR64, we employed Chinese wild rice (CW)-type CMS/Restorer of fertility 17 (Rf17) system, in which fertility is restored by a single nuclear gene, Rf17. Successive backcrossing and marker-assisted selection of Rf17 succeeded to produce completely male sterile CMS lines and fully restored restorer lines of IR24 and IR64. CW-cytoplasm did not affect agronomic characteristics. Since IR64 is one of the most popular mega-varieties and used for breeding of many modern varieties, the CW-CMS line of IR64 will be useful for hybrid rice breeding.

  1. Novel cross-talk between IGF-IR and DDR1 regulates IGF-IR trafficking, signaling and biological responses

    Science.gov (United States)

    Sacco, Antonella; Morcavallo, Alaide; Vella, Veronica; Voci, Concetta; Spatuzza, Michela; Xu, Shi-Qiong; Iozzo, Renato V.; Vigneri, Riccardo; Morrione, Andrea; Belfiore, Antonino

    2015-01-01

    The insulin-like growth factor-I receptor (IGF-IR), plays a key role in regulating mammalian development and growth, and is frequently deregulated in cancer contributing to tumor initiation and progression. Discoidin domain receptor 1 (DDR1), a collagen receptor tyrosine-kinase, is as well frequently overexpressed in cancer and implicated in cancer progression. Thus, we investigated whether a functional cross-talk between the IGF-IR and DDR1 exists and plays any role in cancer progression. Using human breast cancer cells we found that DDR1 constitutively associated with the IGF-IR. However, this interaction was enhanced by IGF-I stimulation, which promoted rapid DDR1 tyrosine-phosphorylation and co-internalization with the IGF-IR. Significantly, DDR1 was critical for IGF-IR endocytosis and trafficking into early endosomes, IGF-IR protein expression and IGF-I intracellular signaling and biological effects, including cell proliferation, migration and colony formation. These biological responses were inhibited by DDR1 silencing and enhanced by DDR1 overexpression. Experiments in mouse fibroblasts co-transfected with the human IGF-IR and DDR1 gave similar results and indicated that, in the absence of IGF-IR, collagen-dependent phosphorylation of DDR1 is impaired. These results demonstrate a critical role of DDR1 in the regulation of IGF-IR action, and identify DDR1 as a novel important target for breast cancers that overexpress IGF-IR. PMID:25840417

  2. The new Zintl phases Eu{sub 21}Cd{sub 4}Sb{sub 18} and Eu{sub 21}Mn{sub 4}Sb{sub 18}

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi; Darone, Gregory M.; Bobev, Svilen, E-mail: bobev@udel.edu

    2016-06-15

    Crystals of two new Zintl compounds, Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} have been synthesized using the molten metal flux method, and their structures have been established by single-crystal X-ray diffraction. Both compounds are isotypic and crystallize in the monoclinic space group C2/m (No. 12, Z=4). The structures are based on edge- and corner-shared MnSb{sub 4} or CdSb{sub 4} tetrahedra, which make octameric [Mn{sub 8}Sb{sub 22}] or [Cd{sub 8}Sb{sub 22}] polyanions. Homoatomic Sb–Sb bonds are present in both structures. The Eu atoms take the role of Eu{sup 2+}cations with seven unpaired 4f electrons, as suggested by the temperature-dependent magnetization measurements. The magnetic susceptibilities of Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} indicate that both phases order anti-ferromagnetically with Néel temperatures of ca. 7 K and ca. 10 K, respectively. The unpaired 3d electrons of the Mn atoms in Eu{sub 21}Mn{sub 4}Sb{sub 18} do contribute to the magnetic response, however, the bulk magnetization measurements do not provide evidence for long-range ordering of the Mn spins down to 5 K. Electrical resistivity measurements suggest that both compounds are narrow band gap semiconductors. - Graphical abstract: Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} have complex monoclinic structures, based on MnSb{sub 4} and CdSb{sub 4} tetrahedra, both edge- and corner-shared. A perspective of the crystal structure is shown, as viewed along the b axis. Display Omitted - Highlights: • Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} are novel compounds in the respective ternary phase diagrams. • For both structures, the Zintl-Klemm rules are followed, and both are small gap semiconductors. • Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} are air-stable Zintl phases and could be new thermoelectric materials.

  3. Inhibition of PTP1B Restores IRS1-Mediated Hepatic Insulin Signaling in IRS2-Deficient Mice

    Science.gov (United States)

    González-Rodríguez, Águeda; Gutierrez, Jose A. Mas; Sanz-González, Silvia; Ros, Manuel; Burks, Deborah J.; Valverde, Ángela M.

    2010-01-01

    OBJECTIVE Mice with complete deletion of insulin receptor substrate 2 (IRS2) develop hyperglycemia, impaired hepatic insulin signaling, and elevated gluconeogenesis, whereas mice deficient for protein tyrosine phosphatase (PTP)1B display an opposing hepatic phenotype characterized by increased sensitivity to insulin. To define the relationship between these two signaling pathways in the regulation of liver metabolism, we used genetic and pharmacological approaches to study the effects of inhibiting PTP1B on hepatic insulin signaling and expression of gluconeogenic enzymes in IRS2−/− mice. RESEARCH DESIGN AND METHODS We analyzed glucose homeostasis and insulin signaling in liver and isolated hepatocytes from IRS2−/− and IRS2−/−/PTP1B−/− mice. Additionally, hepatic insulin signaling was assessed in control and IRS2−/− mice treated with resveratrol, an antioxidant present in red wine. RESULTS In livers of hyperglycemic IRS2−/− mice, the expression levels of PTP1B and its association with the insulin receptor (IR) were increased. The absence of PTP1B in the double-mutant mice restored hepatic IRS1-mediated phosphatidylinositol (PI) 3-kinase/Akt/Foxo1 signaling. Moreover, resveratrol treatment of hyperglycemic IRS2−/− mice decreased hepatic PTP1B mRNA and inhibited PTP1B activity, thereby restoring IRS1-mediated PI 3-kinase/Akt/Foxo1 signaling and peripheral insulin sensitivity. CONCLUSIONS By regulating the phosphorylation state of IR, PTB1B determines sensitivity to insulin in liver and exerts a unique role in the interplay between IRS1 and IRS2 in the modulation of hepatic insulin action. PMID:20028942

  4. Study on IR Properties of Reduced Graphene Oxide

    Science.gov (United States)

    Ma, Deyue; Li, Xiaoxia; Guo, Yuxiang; Zeng, Yurun

    2018-01-01

    Firstly, the reduced graphene oxide was prepared by modified hummer method and characterized. Then, the complex refractive index of reduced graphene oxide in IR band was tested and its IR absorption and radiation properties were researched by correlated calculation. The results show that reduced graphene oxide prepared by hummer method are multilayered graphene with defects and functional groups on its surface. Its absorption in near and far IR bands is strong, but it’s weaker in middle IR band. At the IR atmosphere Window, its normal spectral emissivity decreases with wavelength increasing, and its total normal spectral emissivity in 3 ∼ 5μm and 8 ∼ 14μm are 0.75 and 0.625, respectively. Therefore, reduced graphene oxide can be used as IR absorption and coating materials and have a great potential in microwave and infrared compatible materials.

  5. Endurance test on IR rig for RI production

    International Nuclear Information System (INIS)

    Chung, Heung June; Youn, Y. J.; Han, H. S.; Hong, S. B.; Cho, Y. G.; Ryu, J. S.

    2000-12-01

    This report presents the pressure drop, vibration and endurance test results for IR rig for RI production which were desigened and fabricated by KAERI. From the pressure drop test results, it is noted that the flow rate through the IR rig corresponding to the pressure drop of 200 kPa is measured to be about 3.12 kg/sec. Vibration frequency for the IR rig ranges from 13 to 17 Hz. RMS(Root Mean Square) displacement for the IR rig is less than 30 μm, and the maximum displacement is less than 110μm. These experimental results show that the design criteria of IR rig meet the HANARO limit conditions. Endurance test results show that the appreciable fretting wear for the IR rig does not occur, however tiny trace of wear between contact points is observed

  6. Future development of IR thermovision weather satellite equipment

    Science.gov (United States)

    Listratov, A. V.

    1974-01-01

    The self radiation of the surface being viewed is used for image synthesis in IR thermovision equipment. The installation of such equipment aboard weather satellites makes it possible to obtain cloud cover pictures of the earth's surface in a complete orbit, regardless of the illumination conditions, and also provides quantitative information on the underlying surface temperature and cloud top height. Such equipment is used successfully aboard the Soviet satellites of the Meteor system, and experimentally on the American satellites of the Nimbus series. With regard to surface resolution, the present-day IR weather satellite equipment is inferior to the television equipment. This is due primarily to the comparatively low detectivity of the IR detectors used. While IR equipment has several fundamental advantages in comparison with the conventional television equipment, the problem arises of determining the possibility for future development of weather satellite IR thermovision equipment. Criteria are examined for evaluating the quality of IR.

  7. Synthesis and characterization of PVP/ Sb2S3 composite films

    International Nuclear Information System (INIS)

    Salema, A.M.; Marzouka, S.; Khafagib, M.G.

    2005-01-01

    Polyvinyl pyrrolidone has been successfully used as a matrix to embedded Sb 2 S 3 nanoparticles. PVP thin films containing 5-25 wt % Sb 2 S 3 were deposited onto glass substrates by dip coating. X-ray diffraction spectra revealed that Sb 2 S 3 crystals depressed as nanometer-sized in the PVP matrix and the result was confirmed via scanning electron microscopy. The transmission and reflection spectra of the prepared samples were recorded in the wavelength optical range 250-2500 nm. The transmission spectra of the films show that transmission valley shifts toward higher wavelengths with increasing Sb 2 S 3 wt %. The optical constants of the deposited films, such as refractive index, extinction coefficient were obtained using the transmission and reflection data. The spectral behaviour of the loss factor, as well as the real and imaginary parts of the optical conductivity were also presented

  8. X-ray diffraction, Raman and photoacoustic studies of InSb nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Ersching, K., E-mail: kleb85@hotmail.com [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, 88040-900 Florianopolis, Santa Catarina (Brazil); Campos, C.E.M.; Lima, J.C. de; Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, 88040-900 Florianopolis, Santa Catarina (Brazil); Souza, S.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, 88040-900 Florianopolis, Santa Catarina (Brazil); Pizani, P.S. [Departamento de Fisica, Universidade Federal de Sao Carlos, 13 565-905 Sao Carlos, SP (Brazil)

    2010-08-01

    Zinc blend InSb nanocrystals were generated by mechanical alloying and X-ray diffraction, Raman spectroscopy and photoacoustic absorption spectroscopy techniques were used to study its structural, optical and thermal properties. Annealed nanocrystals were also studied. Residual amorphous and minority crystalline (Sb and In{sub 2}O{sub 3}) phases were also observed for mechanical alloyed and thermal annealed samples, respectively. The structural parameters, phase fractions, average crystallite sizes and microstrains of all crystalline phases found in the samples were obtained from Rietveld analyses of their X-ray diffraction patterns. Raman results for both as-milled and annealed samples show the Raman active LO and TO modes of the zinc blend InSb phase and Sb-rich regions. The photoacoustic results of both samples were satisfactorily explained by thermal bending heat transfer mechanism and an increase on effective thermal diffusivity coefficient was observed after annealing.

  9. MOCVD growth and structural characterization of In-Sb-Te nanowires

    International Nuclear Information System (INIS)

    Selmo, S.; Fanciulli, M.; Cecchi, S.; Cecchini, R.; Wiemer, C.; Longo, M.; Rotunno, E.; Lazzarini, L.

    2016-01-01

    In this work, the self-assembly of In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 NWs were obtained for different reactor pressures at 325 C. The parameters influencing the NW self-assembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO 2 ). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Low temperature grown GaNAsSb: A promising material for photoconductive switch application

    Energy Technology Data Exchange (ETDEWEB)

    Tan, K. H.; Yoon, S. F.; Wicaksono, S.; Loke, W. K.; Li, D. S. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Saadsaoud, N.; Tripon-Canseliet, C. [Laboratoire d' Electronique et Electromagnétisme, Pierre and Marie Curie University, 4 Place Jussieu, 75005 Paris (France); Lampin, J. F.; Decoster, D. [Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, Universite des Sciences et Technologies de Lille, BP 60069, 59652 Villeneuve d' Ascq Cedex (France); Chazelas, J. [Thales Airborne Systems, 2 Avenue Gay Lussac, 78852 Elancourt (France)

    2013-09-09

    We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 10{sup 7} Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.

  11. Monte Carlo study of the magnetic properties of GdSb alloys

    Energy Technology Data Exchange (ETDEWEB)

    Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, Sidi Bouzid, Safi, BP, 46000 63 (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Av. Ibn Batouta, B.P. 1014, Rabat (Morocco); Bahmad, L. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Av. Ibn Batouta, B.P. 1014, Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Layers and Nanotechnologies, MAScIR, Rabat (Morocco); Benyoussef, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Av. Ibn Batouta, B.P. 1014, Rabat (Morocco); Institute of Layers and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco)

    2014-03-15

    The magnetic properties of antiferromagnetic GdSb layers have been studied using Monte Carlo simulations within the Ising model framework. The considered Hamiltonian includes first nearest-neighbor, an external magnetic field and a crystal field. The thermal magnetizations and magnetic susceptibilities are computed for a fixed size. In addition, the Néel temperature is deduced. The magnetization versus the exchange interactions and crystal field are studied for a fixed system size, N=5, 7 and 9 sites. The magnetic hysteresis cycle versus temperature is also established. - Highlights: • Determination of the Néel temperature of GdSb by MC simulations. • Magnetic hysteresis cycle of GdSb. • Determination of saturation magnetization and field coercive in GdSb.

  12. Characterization of basic physical properties of Sb2Se3 and its relevance for photovoltaics

    Institute of Scientific and Technical Information of China (English)

    Chao CHEN; Matthew C.BEARD; Jiang TANG; David C.BOBELA; Ye YANG; Shuaicheng LU; Kai ZENG; Cong GE; Bo YANG; Liang GAO; Yang ZHAO

    2017-01-01

    Antimony selenide (Sb2Se3) is a promising absorber material for thin film photovoltaics because of its attractive material,optical and electrical properties.In recent years,the power conversion efficiency (PCE) of Sb2Se3 thin film solar cells has gradually enhanced to 5.6%.In this article,we systematically studied the basic physical properties of Sb2Se3 such as dielectric constant,anisotropic mobility,carrier lifetime,diffusion length,defect depth,defect density and optical band tail states.We believe such a comprehensive characterization of the basic physical properties of Sb2Se3 lays a solid foundation for further optimization of solar device performance.

  13. Sb/Mn co-doped oxyfluoride silicate glasses for potential applications in photosynthesis

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Chaofeng [Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province, Qilu University of Technology, Jinan 250353 (China); Laboratoire des Verres et Céramiques, UMR-CNRS 6226, Université de Rennes 1, Rennes 35042 (France); Zhang, Xianghua, E-mail: xiang-hua.zhang@univ-rennes1.fr [Laboratoire des Verres et Céramiques, UMR-CNRS 6226, Université de Rennes 1, Rennes 35042 (France); Ma, Hongli [Laboratoire des Verres et Céramiques, UMR-CNRS 6226, Université de Rennes 1, Rennes 35042 (France)

    2016-03-15

    A series of Sb/Mn co-doped oxyfluoride silicate glasses were prepared via the melt-quenching method to explore red luminescent materials for potential applications in photosynthesis of green plants, and these glasses are investigated by means of luminescence decay curves, absorption, emission, and excitation spectra. We find that the as-prepared glasses are transparent in the visible region and can emit strong red light under ultraviolet, purple, and green light excitations. Furthermore, energy transfer from Sb{sup 3+} to Mn{sup 2+} ions occurs in Sb/Mn co-doped glasses. The results demonstrate that the as-prepared Sb/Mn co-doped oxyfluoride silicate glasses may serve as a potential candidate for developing glass greenhouse, which can enhance the utilization of solar energy for the photosynthesis of the green plants.

  14. Morphological Instability in InAs/GaSb Superlattices due to Interfacial Bonds

    International Nuclear Information System (INIS)

    Li, J.H.; Moss, S.C.; Stokes, D.W.; Caha, O.; Bassler, K.E.; Ammu, S.L.; Bai, J.

    2005-01-01

    Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. It is found that the morphological instability that occurs in the nanowire array results from the large misfit strain that the InSb interfacial bonds have in the nanowire array. Based on this result, we propose that tailoring the type of interfacial bonds during the epitaxial growth of III-V semiconductor films provides a novel approach for producing the technologically important morphological instability in anomalously thin layers

  15. Structural characterization of half-metallic Heusler compound NiMnSb

    Energy Technology Data Exchange (ETDEWEB)

    Nowicki, L. E-mail: lech.nowicki@fuw.edu.pl; Abdul-Kader, A.M.; Bach, P.; Schmidt, G.; Molenkamp, L.W.; Turos, A.; Karczewski, G

    2004-06-01

    High resolution X-ray diffraction (HRXRD) and Rutherford backscattering/channeling (RBS/c) techniques were used to characterize layers of NiMnSb grown by molecular beam epitaxy (MBE) on InP with a In{sub x}Ga{sub 1-x}As buffer. Angular scans in the channeling mode reveal that the crystal structure of NiMnSb is tetragonally deformed with c/a=1.010{+-}0.002, in agreement with HRXRD data. Although HRXRD demonstrates the good quality of the pseudomorphic NiMnSb layers the channeling studies show that about 20% of atoms in the layers do not occupy lattice sites in the [0 0 1] rows of NiMnSb. The possible mechanisms responsible for the observed disorder are discussed.

  16. Thermoelectric properties of quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

    2014-01-25

    Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound. -- Abstract: The quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data.

  17. Thermoelectric properties of quaternary (Bi,Sb)2(Te,Se)3 compound

    International Nuclear Information System (INIS)

    Lu, Pengfei; Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia; Wang, Shumin

    2014-01-01

    Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb) 2 (Te,Se) 3 compound. -- Abstract: The quaternary (Bi,Sb) 2 (Te,Se) 3 compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data

  18. Structural and Magnetic Properties of Co-Mn-Sb Thin films

    Energy Technology Data Exchange (ETDEWEB)

    Meinert, M.; Schmalhorst, J.-M.; Ebke, D.; Liu, N. N.; Thomas, A.; Reiss, G.; Kanak, J.; Stobiecki, T.; Arenholz, E.

    2009-12-17

    Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

  19. Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb

    KAUST Repository

    Zhang, Qingyun; Schwingenschlö gl, Udo

    2016-01-01

    Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer As and AsSb. While the pristine monolayers are semiconductors (direct band gap at the Γ point), fluorination results in Dirac cones at the K

  20. Dislocation motion in InSb crystals under a magnetic field

    CERN Document Server

    Darinskaya, E V; Erofeeva, S A

    2002-01-01

    Dislocation displacements under the action of a permanent magnetic field without mechanical loading in differently doped InSb crystals are investigated. The dependences of the mean dislocation path length and the relative number of divergence and tightening half-loops on the magnetic induction and preliminary load are obtained. Experiments on n-InSb crystals with Te impurities and on p-InSb crystals with Ge impurities have shown a sensitivity of the magnetoplasticity to the conductivity type and the dopant content. Study of the magnetoplastic effect in the initial deformed InSb crystals shows that internal stresses decrease the lengths of divergence dislocation paths and simultaneously increase the threshold magnetic field above which the magnetoplastic effect exists. Possible reasons for the observed phenomena are discussed.

  1. Effect of Sb thickness on the performance of bialkali-antimonide photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Mamun, Md Abdullah A., E-mail: mmamu001@odu.edu; Elmustafa, Abdelmageed A. [Department of Mechanical and Aerospace Engineering, Old Dominion University, Norfolk, Virginia 23529 and The Applied Research Center, Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States); Hernandez-Garcia, Carlos; Mammei, Russell; Poelker, Matthew [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2016-03-15

    The alkali species Cs and K were codeposited using an effusion source, onto relatively thick layers of Sb (50 nm to ∼7 μm) grown on GaAs and Ta substrates inside a vacuum chamber that was baked and not-vented, and also baked and vented with clean dry nitrogen but not rebaked. The characteristics of the Sb films, including sticking probability, surface roughness, grain size, and crystal properties were very different for these conditions, yet comparable values of photocathode yield [or quantum efficiency (QE)] at 284 V were obtained following codeposition of the alkali materials. Photocathodes manufactured with comparatively thick Sb layers exhibited the highest QE and the best 1/e lifetime. The authors speculate that the alkali codeposition enabled optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali materials.

  2. High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

    Science.gov (United States)

    Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

    2018-06-01

    In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

  3. Thermoelectric properties of high pressure synthesized lithium and calcium double-filled CoSb3

    Directory of Open Access Journals (Sweden)

    Xiaohui Li

    2017-01-01

    Full Text Available Lithium and calcium are inefficient filling elements of CoSb3 at ambient pressure, but show nice filling behavior under high pressure. In this work, we synthesized Li/Ca double-filled CoSb3 with high pressure synthesis method. The products show the skutterudite structure of Im3¯ symmetry. Thermoelectric properties were effectively enhanced through Li and Ca co-filling. For the optimal Li0.08Ca0.18Co4Sb12 sample, the power factor maintains a relatively high value over the whole measurement temperature range and peaks at 4700μWm−1K−2, meanwhile the lattice thermal conductivity is greatly suppressed, leading to a maximal ZT of 1.18 at 700 K. Current work demonstrates high pressure synthesis as an effective method to produce multiple elemental filled CoSb3 skutterudites.

  4. Evaluation of the grass mixture (Faestuca Rubra, Cynodon Dactylon, Lolium Multiflorum and Pennisetum sp.) as Sb phyto-stabilizer in tailings and Sb-rich soils.

    Science.gov (United States)

    Aurora Armienta, M.; Beltrán-Villavicencio, Margarita; Ruiz-Villalobos, Carlos E.; Labastida, Israel; Ceniceros, Nora; Cruz, Olivia; Aguayo, Alejandra

    2017-04-01

    Green house experiments were carried out to evaluate the growth and Sb assimilation of a grass assemblage: Faestuca Rubra, Cynodon Dactylon, Lolium Multiflorum and Pennisetum sp, in tailings and Sb-rich soils. Tailings and soil samples were obtained at the Mexican historical mining zone of Zimapán, Central México. More than 6 tailings impoundments are located at the town outskirts and constitute a contamination source from windblown and waterborne deposit on soils, besides acid mine drainage. Four substrates were used in the experiments: 100% tailings, 20% tailings + 80% soil, 50% tailings + 50% soil , and a soil sample far from tailings as a background. Concentrations of Sb ranged from 310 mg/kg to 413 mg/kg in tailings. A pH of 7.43, 1.27% organic matter, and high concentrations of N, K and P indicated adequate conditions for plant growth. The grass assemblage was raised during 21 days as indicated by OECD (Organisation for Economic Co-operation and Development) Guideline 208 Terrestrial Plant Test: Seedling Emergence and Seedling Growth Test. The highest Sb concentrations were measured in plants grown on tailings with 139 mg/kg in the aerial part and 883 mg/kg in roots. Concentrations of Sb decreased as the proportion of tailings diminished with 22.1 mg/kg in the aerial part and 10 mg/kg in roots corresponding to the plants grown in the 20 % tailings + 80% soil . Bioaccumulation (BAC) and bioconcentration factors (BF) of plants grown on tailings (BAC= 0.42, BCF=3.93) indicated their suitability as a phyto-stabilization option. The grass mixture may be thus applied to control windblown particulate tailings taking advantage to their tolerance to high Sb levels.

  5. IR sensor for monitoring of burner flame; IR sensor foer oevervakning av braennarflamma

    Energy Technology Data Exchange (ETDEWEB)

    Svanberg, Marcus; Funkquist, Jonas; Clausen, Soennik; Wetterstroem, Jonas

    2007-12-15

    To obtain a smooth operation of the coal-fired power plants many power plant managers have installed online mass flow measurement of coal to all burners. This signal is used to monitor the coal mass flow to the individual burner and match it with appropriate amount of air and also to monitor the distribution of coal between the burners. The online mass flow measurement system is very expensive (approximately 150 kEUR for ten burners) and is not beneficial for smaller plants. The accuracy of the measurement and the sample frequency are also questionable. The idea in this project has been to evaluate a cheaper system that can present the same information and may also provide better accuracy and faster sample frequency. The infrared sensor is a cheap narrow banded light emission sensor that can be placed in a water cooed probe. The sensor was directed at the burner flame and the emitted light was monitored. Through calibration the mass flow of coal can be presented. Two measurement campaigns were performed. Both campaigns were carried out in Nordjyllandsverket in Denmark even though the second campaign was planned to be in Uppsala. Due to severe problems in the Uppsala plant the campaign was moved to Nordjyllandsverket. The pre-requisites for the test plant were that online measurement of coal flow was installed. In Nordjyllandsverket 4 out of 16 burners have the mass flow measurement installed. Risoe Laboratories has vast experiences in the IR technology and they provided the IR sensing equipment. One IR sensor was placed in the flame guard position just behind the flame directed towards the ignition zone. A second sensor was placed at the boiler wall directed towards the flame. The boiler wall position did not give any results and the location was not used during the second campaign. The flame-guard-positioned-sensor- signal was thoroughly evaluated and the results show that there is a clear correlation between the coal mass flow and the IR sensor signal. Tests were

  6. New Ir Bis-Carbonyl Precursor for Water Oxidation Catalysis

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Daria L. [Department of Chemistry, Yale University, 225; Beltrán-Suito, Rodrigo [Department of Chemistry, Yale University, 225; Thomsen, Julianne M. [Department of Chemistry, Yale University, 225; Hashmi, Sara M. [Department of Chemical and Environmental; Materna, Kelly L. [Department of Chemistry, Yale University, 225; Sheehan, Stafford W. [Catalytic Innovations LLC, 70 Crandall; Mercado, Brandon Q. [Department of Chemistry, Yale University, 225; Brudvig, Gary W. [Department of Chemistry, Yale University, 225; Crabtree, Robert H. [Department of Chemistry, Yale University, 225

    2016-02-05

    This paper introduces IrI(CO)2(pyalc) (pyalc = (2-pyridyl)-2-propanoate) as an atom-efficient precursor for Ir-based homogeneous oxidation catalysis. This compound was chosen to simplify analysis of the water oxidation catalyst species formed by the previously reported Cp*IrIII(pyalc)OH water oxidation precatalyst. Here, we present a comparative study on the chemical and catalytic properties of these two precursors. Previous studies show that oxidative activation of Cp*Ir-based precursors with NaIO4 results in formation of a blue IrIV species. This activation is concomitant with the loss of the placeholder Cp* ligand which oxidatively degrades to form acetic acid, iodate, and other obligatory byproducts. The activation process requires substantial amounts of primary oxidant, and the degradation products complicate analysis of the resulting IrIV species. The species formed from oxidation of the Ir(CO)2(pyalc) precursor, on the other hand, lacks these degradation products (the CO ligands are easily lost upon oxidation) which allows for more detailed examination of the resulting Ir(pyalc) active species both catalytically and spectroscopically, although complete structural analysis is still elusive. Once Ir(CO)2(pyalc) is activated, the system requires acetic acid or acetate to prevent the formation of nanoparticles. Investigation of the activated bis-carbonyl complex also suggests several Ir(pyalc) isomers may exist in solution. By 1H NMR, activated Ir(CO)2(pyalc) has fewer isomers than activated Cp*Ir complexes, allowing for advanced characterization. Future research in this direction is expected to contribute to a better structural understanding of the active species. A diol crystallization agent was needed for the structure determination of 3.

  7. Room temperature mid-IR single photon spectral imaging

    DEFF Research Database (Denmark)

    Dam, Jeppe Seidelin; Tidemand-Lichtenberg, Peter; Pedersen, Christian

    2012-01-01

    Spectral imaging and detection of mid-infrared (mid-IR) wavelengths are emerging as an enabling technology of great technical and scientific interest; primarily because important chemical compounds display unique and strong mid-IR spectral fingerprints revealing valuable chemical information. Whi...... 20 % for polarized incoherent light at 3 \\mum. The proposed method is relevant for existing and new mid-IR applications like gas analysis and medical diagnostics....

  8. A review of Pb-Sb(As-S, Cu(Ag-Fe(Zn-Sb(As-S, Ag(Pb-Bi(Sb-S and Pb-Bi-S(Te sulfosalt systems from the Boranja orefield, West Serbia

    Directory of Open Access Journals (Sweden)

    Radosavljević Slobodan A.

    2016-01-01

    Full Text Available Recent mineralogical, chemical, physical, and crystallographic investigations of the Boranja orefield showed very complex mineral associations and assemblages where sulfosalts have significant role. The sulfosalts of the Boranja orefield can be divided in four main groups: (i Pb-Sb(As-S system with ±Fe and ±Cu; (ii Cu(Ag-Fe(Zn-Sb(As-S system; (iii Ag(Pb-Bi(Sb-S; (iv and Pb-Bi-S(Te system. Spatially, these sulfosalts are widely spread, however, they are the most abundant in the following polymetallic deposits and ore zones: Cu(Bi-FeS Kram-Mlakva; Pb(Ag-Zn-FeS2 Veliki Majdan (Kolarica-Centralni revir-Kojići; Sb-Zn-Pb-As Rujevac; and Pb-Zn-FeS2-BaSO4 Bobija. The multi stage formation of minerals, from skarnhydrothermal to complex hydrothermal with various stages and sub-stages has been determined. All hydrothermal stages and sub-stages of various polymetallic deposits and ore zones within the Boranja orefield are followed by a variety of sulfosalts. [Projekat Ministarstva nauke Republike Srbije, br. OI-176016: Magmatism and geodynamics of the Balkan Peninsula from Mesozoic to present day: Significance for the formation of metallic and non-metallic mineral deposits

  9. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

    International Nuclear Information System (INIS)

    Harris, James S. Jr.; Kudrawiec, R.; Yuen, H.B.; Bank, S.R.; Bae, H.P.; Wistey, M.A.; Jackrel, D.; Pickett, E.R.; Sarmiento, T.; Goddard, L.L.; Lordi, V.; Gugov, T.

    2007-01-01

    In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2-1.6 μm range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5-1.6 μm lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 μm based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

    Science.gov (United States)

    Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

    2018-05-01

    Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

  11. The Cu-Te-Sb phase system at temperatures between 300 and 1000 degree C

    DEFF Research Database (Denmark)

    Karup-Møller, Sven

    1997-01-01

    Phase relations were determined in the Cu-Te-Sb phase system at 300, 350, 400, 500, 600, 700, 800, 900 and 1000 degree C. At temperatures between 400 and 900 degree C a cubic primitive ternary phase A exists. It has the empirical formula Cu(10.32-0.97x)Te(x)Sb(4-x) (Z=2, a=7.682 Å). A small liquid...

  12. Fluorometric and molecular docking investigation on the binding characteristics of SB202190 to human serum albumin

    Energy Technology Data Exchange (ETDEWEB)

    Nasruddin, Ahmad N.; Feroz, Shevin R. [Biomolecular Research Group, Biochemistry Programme, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Mukarram, Abdul K. [Bioinformatics Programme, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Mohamad, Saharuddin B. [Bioinformatics Programme, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Centre of Research for Computational Sciences and Informatics for Biology, Bioindustry, Environment, Agriculture and Healthcare, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Tayyab, Saad, E-mail: saadtayyab2004@yahoo.com [Biomolecular Research Group, Biochemistry Programme, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Centre of Research for Computational Sciences and Informatics for Biology, Bioindustry, Environment, Agriculture and Healthcare, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-06-15

    The interaction of SB202190, a p38 mitogen-activated protein kinase inhibitor with the main drug transporter in human circulation, human serum albumin (HSA) was studied using fluorescence spectroscopy and in silico docking methods. The association constant, K{sub a} of the binding reaction was determined to be 3.24±0.07×10{sup 4} M{sup −1} at 25 °C based on fluorescence quenching titration results. The values of enthalpy change and entropy change for the interaction were found as −8.54 kJ mol{sup −1} and 58.01 J mol{sup −1} K{sup −1}, respectively. Both thermodynamic data and docking results suggested the involvement of hydrophobic and van der Waals forces in the complex formation. Three-dimensional fluorescence data of SB202190–HSA complex demonstrated significant changes in the microenvironment around the protein fluorophores upon drug binding. Comparison of HSA thermograms obtained in the absence and the presence of SB202190 suggested improved protein thermal stability upon complexation with the drug. Competitive drug displacement results as well as modeling data concluded the preferred binding site of SB202190 on HSA as Sudlow's site I. - Highlights: • SB202190 interacts with HSA with moderate affinity. • Involvement of hydrophobic and van der Waals forces in SB202190 binding. • SB202190 binding results in microenvironmental changes around fluorophores. • Sudlow's site I is the preferred binding site of SB202190.

  13. Thermoelectric Properties of SnO2 Ceramics Doped with Sb and Zn

    DEFF Research Database (Denmark)

    Yanagiya, S.; Van Nong, Ngo; Xu, Jianxiao Jackie

    2011-01-01

    Polycrystalline SnO2-based samples (Sn0.97−x Sb0.03Zn x O2, x = 0, 0.01, 0.03) were prepared by solid-state reactions. The thermoelectric properties of SnO2 doped with Sb and Zn were investigated from 300 K to 1100 K. X-ray diffraction (XRD) analysis revealed all XRD peaks of all the samples...

  14. SB265610 is an allosteric, inverse agonist at the human CXCR2 receptor

    Science.gov (United States)

    Bradley, ME; Bond, ME; Manini, J; Brown, Z; Charlton, SJ

    2009-01-01

    Background and purpose: In several previous studies, the C-X-C chemokine receptor (CXCR)2 antagonist 1-(2-bromo-phenyl)-3-(7-cyano-3H-benzotriazol-4-yl)-urea (SB265610) has been described as binding competitively with the endogenous agonist. This is in contrast to many other chemokine receptor antagonists, where the mechanism of antagonism has been described as allosteric. Experimental approach: To determine whether it displays a unique mechanism among the chemokine receptor antagonists, the mode of action of SB265610 was investigated at the CXCR2 receptor using radioligand and [35S]-GTPγS binding approaches in addition to chemotaxis of human neutrophils. Key results: In equilibrium saturation binding studies, SB265610 depressed the maximal binding of [125I]-interleukin-8 ([125I]-IL-8) without affecting the Kd. In contrast, IL-8 was unable to prevent binding of [3H]-SB265610. Kinetic binding experiments demonstrated that this was not an artefact of irreversible or slowly reversible binding. In functional experiments, SB265610 caused a rightward shift of the concentration-response curves to IL-8 and growth-related oncogene α, but also a reduction in maximal response elicited by each agonist. Fitting these data to an operational allosteric ternary complex model suggested that, once bound, SB265610 completely blocks receptor activation. SB265610 also inhibited basal [35S]-GTPγS binding in this preparation. Conclusions and implications: Taken together, these data suggest that SB265610 behaves as an allosteric inverse agonist at the CXCR2 receptor, binding at a region distinct from the agonist binding site to prevent receptor activation, possibly by interfering with G protein coupling. PMID:19422399

  15. Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

    2003-08-01

    Thin films of Cu2Sb, prepared on stainless steel and copper substrates with a pulsed laser deposition technique at room temperature, have been evaluated as electrodes in lithium cells. The electrodes operate by a lithium insertion/copper extrusion reaction mechanism, the reversibility of which is superior when copper substrates are used, particularly when electrochemical cycling is restricted to the voltage range 0.65-1.4 V vs. Li/Li+. The superior performance of Cu2Sb films on copper is attributed to the more active participation of the extruded copper in the functioning of the electrode. The continual and extensive extrusion of copper on cycling the cells leads to the isolation of Li3Sb particles and a consequent formation of Sb. Improved cycling stability of both types of electrodes was obtained when cells were cycled between 0.65 and 1.4 V. A low-capacity lithium-ion cell with Cu2Sb and LiNi0.8Co0.15Al0.05O2 electrodes, laminated from powders, shows excellent cycling stability over the voltage range 3.15 - 2.2 V, the potential difference corresponding to approximately 0.65-1.4 V for the Cu2Sb electrode vs. Li/Li+. Chemical self-discharge of lithiated Cu2Sb electrodes by reaction with the electrolyte was severe when cells were allowed to relax on open circuit after reaching a lower voltage limit of 0.1 V. The solid electrolyte interphase (SEI) layer formed on Cu2Sb electrodes after cells had been cycled between 1.4 and 0.65 V vs. Li/Li+ was characterized by Fourier-transform infrared spectroscopy; the SEI layer contributes to the large irreversible capacity loss on the initial cycle of these cells. The data contribute to a better understanding of the electrochemical behavior of intermetallic electrodes in rechargeable lithium batteries.

  16. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

    Energy Technology Data Exchange (ETDEWEB)

    Harris, James S. Jr.; Kudrawiec, R.; Yuen, H.B.; Bank, S.R.; Bae, H.P.; Wistey, M.A.; Jackrel, D.; Pickett, E.R.; Sarmiento, T.; Goddard, L.L.; Lordi, V.; Gugov, T. [Solid State and Photonics Laboratory, Stanford University, CIS-X 328, Via Ortega, Stanford, California 94305-4075 (United States)

    2007-08-15

    In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2-1.6 {mu}m range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5-1.6 {mu}m lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 {mu}m based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Coherence Kondo gap in CeNiSn and CeRhSb

    International Nuclear Information System (INIS)

    Takabatake, T.; Nakamoto, G.; Tanaka, H.; Bando, Y.; Fujii, H.; Nishigori, S.; Goshima, H.; Suzuki, T.; Fujita, T.; Oguro, I.; Hiraoka, T.; Malik, S.K.

    1994-01-01

    CeNiSn and CeRhSb are Kondo-lattice compounds showing the behavior of a small-gap semiconductor at temperatures below 7 K. We review and discuss the magnetic, transport and specific-heat measurements performed on single crystals of CeNiSn and polycrystals of CeRhSb. Prerequisites for gap formation are deduced from the effects of substitution and application of a magnetic field and pressure on the gapped state. ((orig.))

  18. Synthesis, characterization and electrochemical behavior of Sb-doped ZnO microsphere film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qian [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Cheng, Kui, E-mail: chengkui@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Weng, Wenjian, E-mail: wengwj@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); The Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050 (China); Du, Piyi; Han, Gaorong [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China)

    2013-10-01

    Sb-doped ZnO microsphere film was fabricated by a carboxylate ion assisted hydrothermal route coupled with a post-calcination process. The structure, chemical composition and optical band gap of the Sb-doped ZnO microsphere film were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, inductively couple plasma optical emission spectroscopy and UV–visible spectrophotometry, and compared with the un-doped ZnO microsphere film. The results suggest that the formation of zinc–antimony tartrate complex species during hydrothermal growth is the key to realize Sb-doped ZnO microstructures, and the present hydrothermal method with post-calcination is an effective way to dope Sb into ZnO. Furthermore, the Sb-doped ZnO microsphere film based electrochemical biosensor exhibits a good sensing performance for the detection of hydrogen peroxide, with a sensitivity of 271 μA mM{sup −1} cm{sup −2} which is more than three times higher than that of the un-doped ZnO biosensor. - Highlights: • Sb-doped ZnO microsphere (SZM) films were grown by hydrothermal deposition. • Carboxylate ions were used to form complex during hydrothermal growth. • The formation of Zn–Sb tartrate complex is the key to realize SZM. • The biosensors based on SZM film are feasible and sensitive to detect H{sub 2}O{sub 2}. • The Sb doping could improve the electrochemical property of ZnO.

  19. Epitaxial growth of Ge-Sb-Te based phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Perumal, Karthick

    2013-07-30

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  20. Experimental and theoretical investigation of topological and energetic characteristics of Sb complexes reversibly binding molecular oxygen.

    Science.gov (United States)

    Fukin, Georgy K; Baranov, Evgenii V; Jelsch, Christian; Guillot, Benoît; Poddel'sky, Andrey I; Cherkasov, Vladimir K; Abakumov, Gleb A

    2011-07-28

    The experimental distribution of electron density in Ph(3)(4,5-OMe-3,6-Bu(t)-Cat)Sb·MeCN (1*) and Ph(3)(4,5-N(2)C(4)H(6)-3,6-Bu(t)-Cat)Sb·MeOH (2*) complexes was studied. According to atoms in molecules theory, the Sb-C(Ph), Sb-O(catecholate), and Sb···N(O) bonds are intermediate, whereas the O-C and C-C bonds are covalent, respectively. The energy of the Sb···N(MeCN) and Sb···O(MeOH) bonds are 7.0 and 11.3 kcal/mol according to the Espinosa equation. Density functional theory and Hartree-Fock calculations were carried out for a series of catecholate and amidophenolate complexes of antimony(V). It was shown that such calculations reliably reproduce geometrical and topological parameters and therefore can be used for a criterion search of dioxygen reversible binding by the catecholate and amidophenolate complexes of antimony(V). It was found that the "critical" value of the HOMO energy vary in the range from -5.197 to -5.061 eV for reversible binding of dioxygen complexes. This can serve as a thermodynamic criterion to predict the possibility of the dioxygen reversible binding by the catecholate and amidophenolate complexes of Sb(V). The HOMO energies correlate with the conversion of the catecholate and amidophenolate complexes in corresponding spiroendoperoxide derivatives as well. The contribution of the atom orbitals of the carbon atoms in the five-membered metallocycle to HOMO in complexes with different substitutes in the 4- and 5-positions of the catecholate ligand allows predicting the place of dioxygen addition. © 2011 American Chemical Society