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Sample records for ions bombardment effects

  1. Ion bombardment effect on surface state of metal

    International Nuclear Information System (INIS)

    Vaulin, E.P.; Georgieva, N.E.; Martynenko, T.P.

    1990-01-01

    The effect of slow argon ion bombardment on the surface microstructure of polycrystalline copper as well as the effect of surface state on sputtering of D-16 polycrystalline alloy are experimentally studied. Reduction of copper surface roughness is observed. It is shown that the D-16 alloy sputtering coefficient is sensitive to the surface state within the limits of the destructed surface layer

  2. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-05-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

  3. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

    2014-01-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

  4. Ion bombardment effects on surface states in selected oxide systems: rutile and alkaline earth titanates

    International Nuclear Information System (INIS)

    Gruen, D.M.

    1978-01-01

    In this paper, the nature of the surface states of n-type TiO 2 and SrTiO 3 is discussed and the role of ion bombardment in modifying the properties of these states is elucidated. Insofar as possible, the interrelationships between oxide nonstoichiometry, surface states, ion bombardment effects and photoelectrolysis are explored

  5. Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

    International Nuclear Information System (INIS)

    Horvath, Zs. J.

    1994-01-01

    The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardment. (author). 36 refs., 2 figs

  6. Effect of helium ion bombardment on hydrogen behaviour in stainless steel

    International Nuclear Information System (INIS)

    Guseva, M.I.; Stolyarova, V.G.; Gorbatov, E.A.

    1987-01-01

    The effect of helium ion bombardment on hydrogen behaviour in 12Kh18N10T stainless steel is investigated. Helium and hydrogen ion bombardment was conducted in the ILU-3 ion accelerator; the fluence and energy made up 10 16 -5x10 17 cm -2 , 30 keV and 10 16 -5x10 18 cm -2 , 10 keV respectively. The method of recoil nuclei was used for determination of helium and hydrogen content. Successive implantation of helium and hydrogen ions into 12Kh18N10T stainless steel results in hydrogen capture by defects formed by helium ions

  7. Ion bombardment effects on the fatigue life of stainless steel under simulated fusion first wall conditions

    International Nuclear Information System (INIS)

    Kohse, G.; Harling, O.K.

    1983-01-01

    Pressurized tube specimens have been exposed to simultaneous multi-energy surface ion bombardment, fast neutron irradiation and stress and temperature cycling, in a simulation of a possible fusion reactor first wall environment. After ion bombardments equivalent to months-years of reactor operation and up to 30,000 cycles, no detrimental effects on post-irradiation fatigue life were found. The ion damage is found to enhance surface cracking, but this effect is limited to the several micron surface layer in which the ions are implanted

  8. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    Energy Technology Data Exchange (ETDEWEB)

    Awazu, Kaoru; Yoshida, Hiroyuki [Industrial Research Inst. of Ishikawa (Japan); Watanabe, Hiroshi [Gakushuin Univ., Tokyo (Japan); Iwaki, Masaya; Guzman, L [RIKEN, Saitama (Japan)

    1992-04-15

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C{sub 6}H{sub 6} gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10{sup 16} ions cm{sup -2}. The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.).

  9. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    International Nuclear Information System (INIS)

    Awazu, Kaoru; Yoshida, Hiroyuki; Watanabe, Hiroshi; Iwaki, Masaya; Guzman, L.

    1992-01-01

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C 6 H 6 gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10 16 ions cm -2 . The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.)

  10. Effect of ion beam bombardment on the carbide in M2 steel modified by ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.Y.; Wang, F.J.; Wang, Y.K. (Dept. of Materials Engineering, Dalian Univ. of Technology (China)); Ma, T.C. (National Lab. of Materials Modification by Beam Three, Dalian (China))

    1991-10-30

    Transmission electron microscopy was used to study the effect of nitrogen ion bombardment with different doses on the carbides in M2 high speed steel as the nitrogen ions penetrated into the nitride films during ion-beam-assisted deposition. With different doses of nitrogen, alterations in the morphological characteristics of the carbide M6C at the interface were observed. With lower doses, knitting-like contrast within the carbide showed subboundary structure defects in M6C. With increasing dose, the substructure defects were broken up into small fragments owing to heavy bombardment. The microstructures of carbides at the interface damaged by nitrogen ions are discussed in detail. (orig.).

  11. Direct evidence for a thermal effect of Ar+ ion bombardment in a conventional sputtering mode

    International Nuclear Information System (INIS)

    Okuyama, F.; Fujimoto, Y.

    1986-01-01

    Evidence is presented that the Ar + ion bombardment for sputtering in Auger electron spectroscopy can heat the target up to 2000 0 C if the target has poor heat conduction. Polycrystalline microneedles of Cr exhibited spherical tips after being exposed to 3 keV Ar + ions, proving that the needle tips were melted by impacting Ar + ions. Microneedles of Mo ion bombarded under the same condition were bent plastically, which perhaps reflects the thermal annealing of the needles during ion bombardment

  12. Surface roughening under ion bombardment

    International Nuclear Information System (INIS)

    Bhatia, C.S.

    1982-01-01

    Ion bombardment can cause roughening of a surface. Inadequate step coverage and poor adhesion of films on such surfaces are of concern. An extreme case of surface roughening results in cone formation under ion bombardment. The results of the investigation, using scanning electron microscopy, is discussed in terms of the role of (a) embedded particles, (b) impurities and (c) surface migration in cone formation on the target surface. (Auth.)

  13. Ion bombardment modification of surfaces

    International Nuclear Information System (INIS)

    Auciello, O.

    1984-01-01

    An historical overview of the main advances in the understanding of bombardment-induced surface topography is presented. The implantation and sputtering mechanisms which are relevant to ion bombardment modification of surfaces and consequent structural, electronic and compositional changes are described. Descriptions of plasma and ion-beam sputtering-induced film formation, primary ion-beam deposition, dual beam techniques, cluster of molecule ion-beam deposition, and modification of thin film properties by ion bombardment during deposition are presented. A detailed account is given of the analytical and computational modelling of topography from the viewpoint of first erosion theory. Finally, an account of the possible application and/or importance of textured surfaces in technologies and/or experimental techniques not considered in previous chapters is presented. refs.; figs.; tabs

  14. Preliminary report into the effects of nitrogen ion bombardment treatment on mustard seeds

    International Nuclear Information System (INIS)

    Smith, C.W.; Al-Hashmi, S.A.R.; Ahmed, N.A.G.; Pollard, M.

    1988-01-01

    Mustard seeds have been subjected to nitrogen ion bombardment. A range of conditions was found within which there was an enhancement in the growth of seedlings from the ion bombardment treated seeds relative to those grown from control seeds. Scanning electron microscopy was used to examine seeds after treatment. It appeared that there had been an etching of the seed coating by the ion bombardment. This view was supported by experiments which showed that the rate of capillary water uptake by the treated seeds had been enhanced. (author)

  15. Ion bombardment and disorder in amorphous silicon

    International Nuclear Information System (INIS)

    Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

    1997-01-01

    The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects

  16. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

  17. The effects of argon ion bombardment on the corrosion resistance of tantalum

    Science.gov (United States)

    Ramezani, A. H.; Sari, A. H.; Shokouhy, A.

    2017-02-01

    Application of ion beam has been widely used as a surface modification method to improve surface properties. This paper investigates the effect of argon ion implantation on surface structure as well as resistance against tantalum corrosion. In this experiment, argon ions with energy of 30 keV and in doses of 1 × 1017-10 × 1017 ions/cm2 were used. The surface bombardment with inert gases mainly produces modified topography and morphology of the surface. Atomic Force Microscopy was also used to patterned the roughness variations prior to and after the implantation phase. Additionally, the corrosion investigation apparatus wear was applied to compare resistance against tantalum corrosion both before and after ion implantation. The results show that argon ion implantation has a substantial impact on increasing resistance against tantalum corrosion. After the corrosion test, scanning electron microscopy (SEM) analyzed the samples' surface morphologies. In addition, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. The purpose of this paper was to obtain the perfect condition for the formation of tantalum corrosion resistance. In order to evaluate the effect of the ion implantation on the corrosion behavior, potentiodynamic tests were performed. The results show that the corrosion resistance of the samples strongly depends on the implantation doses.

  18. Effects of low-energy ion beam bombardment on metal oxides

    International Nuclear Information System (INIS)

    Sullivan, J.L.; Saied, S.O.; Choudhury, T.

    1993-01-01

    This paper describes a study of Ar ion bombardment damage in metal oxides. In the energy range 1 to 5 keV, preferential oxygen removal and reduction of the oxides was found to depend on ion current density, but to be independent of beam energy. (author)

  19. Effects of low and high energy ion bombardment on ETFE polymer

    Science.gov (United States)

    Minamisawa, R. A.; De Almeida, A.; Abidzina, V.; Parada, M. A.; Muntele, I.; Ila, D.

    2007-04-01

    The polymer ethylenetetrafluoroethylene (ETFE) is used as anti-adherent coatings for food packages and radiation dosimeters. In this work, we compare the damage induced in ETFE bombarded with 100 keV Si ions with that induced by 1 MeV proton bombardment. The damage depends on the type, energy and intensity of the irradiation. Irradiated films were analyzed with optical absorption photospectrometry, Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy to determine the chemical nature of the structural changes caused by ion irradiation. Computer simulations were performed to evaluate the radiation damage.

  20. Ion bombardment modification of surfaces

    International Nuclear Information System (INIS)

    Auciello, O.

    1984-01-01

    Ion bombardment-induced modification of surfaces may be considered one of the significant scientific and technological developments of the last two decades. The understanding acquired concerning the underlying mechanisms of several phenomena occurring during ion-surface interactions has led to applications within different modern technologies. These include microelectronics, surface acoustical and optical technologies, solar energy conversion, thin film technology, ion implantation metallurgy, nuclear track technology, thermonuclear fusion, vacuum technology, cold welding technology, biomedicine (implantology). It has become clear that information on many relevant advances, regarding ion bombardment modification of surfaces is dispersed among journals involving fields sometimes not clearly related. This may result, in some cases, in a loss of the type of interdisciplinary exchange of ideas, which has proved to be so fruitful for the advancement of science and technology. This book has been planned in an attempt to collect at least some of today's relevant information about the experimental and theoretical knowledge related to surface modification and its application to technology. (Auth.)

  1. Ion-bombardment effects on the fatigue life of stainless steel under simulated fusion first-wall conditions

    International Nuclear Information System (INIS)

    Kohse, G.E.

    1983-02-01

    An experiment which uses the MITR-II 5 MW research reactor to simulate several aspects of the anticipated environment of a fusion reactor first wall is described. Pressurized tube specimens are subjected simultaneously to stress and temperature cycling, surface bombardment by energetic helium and lithium ions and bulk irradiation by high-energy neutrons. Analysis of the samples is aimed primarily at determining the behavior of the ion bombarded surface layer, which has a depth of 2.5 μm, with particular reference to possible effects on the fatigue life of the material

  2. The effect of incidence angle on ion bombardment induced surface topography development on single crystal copper

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

    1982-01-01

    The fluence dependence of development of microscopic surface features, particularly etch pits, during 9 keV Ar + ion bombardment of (11,3,1) oriented Cu single crystals has been studied employing quasi-dynamic irradiation and observation techniques in a scanning electron microscope-accelerator system. 9 keV ions are observed not to produce crystallographic pyramids under all irradiation conditions for this surface, a very different result from our earlier studies with higher energy ions. The bombardment does elaborate etch pits however, the habits and growth kinetics of which depend upon both polar and azimuthal angles of ion incidence to the surface. The results are explained in terms of differential erosion of crystal planes modified by the presence of pre-existing and irradiation induces extended defects. (orig.)

  3. Effects of uranium bombardment by 20-40 KeV argon ions, Annex 2

    International Nuclear Information System (INIS)

    Nenadovic, T.; Jurela, Z.

    1966-01-01

    This paper shows the results of argon ions interaction with the polycrystal natural uranium. Thin foil of uranium about 200 μ was bombarded by 20-40 KeV argon ions. Coefficients of cathode scattering δ and secondary electrons emission γ were measured, during the process A + →U. The foil was then studied by transmission method and method of single step replica using an electron microscope [sr

  4. Magnetoresistance and ion bombardment induced magnetic patterning

    International Nuclear Information System (INIS)

    Hoeink, V.

    2008-01-01

    In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

  5. Cleaning of diffusion bonding surface by argon ion bombardment treatment

    International Nuclear Information System (INIS)

    Wang, Airu; Ohashi, Osamu; Yamaguchi, Norio; Aoki, Masanori; Higashi, Yasuo; Hitomi, Nobuteru

    2003-01-01

    The specimens of oxygen-free high conductivity copper, SUS304L stainless steel and pure iron were treated by argon ion bombardment and then were bonded by diffusion bonding method. The effects of argon ion bombardment treatment on faying surface morphology, tensile strength of bonding joints and inclusions at the fracture surface were investigated. The results showed that argon ion bombardment treatment was effective to remove the oxide film and contamination at the faying surface and improve the quality of joints. The tensile strength of the bonded joints was improved, and minimum bonding temperature to make the metallic bonding at the interface was lowered by argon ion bombardment treatment. At the joints with argon ion bombardment treatment, ductile fractured surface was seen and the amount of inclusions was obviously decreased

  6. Characterization techniques for ion bombarded insulators

    International Nuclear Information System (INIS)

    Borders, J.A.

    1987-01-01

    The chapter gives a comprehensive review of the experimental methods for the analysis of ion-bombarded insulators including optical and structural methods, resonance, energetic ion methods, and surface techniques. 48 refs.; 34 figs

  7. Ion bombardment techniques - recent developments in SIMS

    International Nuclear Information System (INIS)

    Konarski, P.; Miśnik, M.

    2013-01-01

    We present a short review of cluster ion bombardment technique recently applied in SIMS. Many advantages of using cluster ion beams are specified over monoatomic ion species. Cluster ions open really new perspectives especially in organic based structures analysis. Nevertheless cluster ions are not the perfect solution and still new ideas of ion erosion in SIMS are needed. Another issue discussed is 'storing matter' technique applied for quantitative analysis in SIMS. Simple idea of sputter deposition of eroded material onto rotating substrate and then analysing the stored material allows to avoid strong matrix effects in SIMS. Presented are the results performed in Tele and Radio Research Institute, Warszawa, Poland. These are the first results of ‘storing matter’ technique performed in one analytical chamber of SIMS instrument. (authors)

  8. Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

    Science.gov (United States)

    Cernusca, S.; Winter, HP.; Aumayr, F.; Díez Muiño, R.; Juaristi, J. I.

    2003-04-01

    Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to "projectile molecular effects" (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

  9. Effects produced in GaAs by MeV ion bombardment

    International Nuclear Information System (INIS)

    Wie, C.R.

    1985-01-01

    The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

  10. Compositional changes during ion bombardment

    International Nuclear Information System (INIS)

    Rehn, L.E.

    1988-09-01

    Ion irradiation initiates several processes that can alter the composition of the target. This presentation provides an overview of our current understanding of these kinetics processes, which include implantation, sputtering, displacement mixing, radiation-enhanced diffusion, and radiation-induced segregation. The latter two effects can alter the target composition to depths that are substantially greater than the projected ion range. 45 refs., 8 figs

  11. Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

    International Nuclear Information System (INIS)

    Cernusca, S.; Winter, H.P.; Aumayr, F.; Diez Muino, R.; Juaristi, J.I.

    2003-01-01

    Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials

  12. Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

    CERN Document Server

    Cernusca, S; Aumayr, F; Diez-Muino, R; Juaristi, J I

    2003-01-01

    Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

  13. Effect of Ni +-ION bombardment on nickel and binary nickel alloys

    Science.gov (United States)

    Roarty, K. B.; Sprague, J. A.; Johnson, R. A.; Smidt, F. A.

    1981-03-01

    Pure nickel and four binary nickel alloys have been subjected to high energy Ni ion bombardment at 675, 625 and 525°C. After irradiation, each specimen was studied by transmission electron microscopy. The pure nickel control was found to swell appreciably (1 to 5%) and the Ni-Al and the Ni-Ti samples were found to swell at all temperatures, but to a lesser degree (0.01 to 0.35%). The Ni-Mo contained a significant density of voids only at 525° C, while swelling was suppressed at all temperatures in the Ni-Si alloy. The dislocation structure progressed from loops to tangles as temperature increased in all materials except the Ni-Ti, in which there was an absence of loops at all temperatures. Dislocation densities decreased as temperature increased in all samples. These results do not correlate well with the relative behavior of the same alloys observed after neutron irradiation at 455°C. The differences between these two sets of data appear to be caused by different mechanisms controlling void nucleation in ion and neutron irradiation of these alloys.

  14. Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

    Energy Technology Data Exchange (ETDEWEB)

    Prakrajang, K., E-mail: k.prakrajang@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2012-09-01

    This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10{sup 15} to 10{sup 16} ions/cm{sup 2}. The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

  15. Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

    International Nuclear Information System (INIS)

    Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L.D.

    2012-01-01

    This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10 15 to 10 16 ions/cm 2 . The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

  16. Cesium ion bombardment of metal surfaces

    International Nuclear Information System (INIS)

    Tompa, G.S.

    1986-01-01

    The steady state cesium coverage due to cesium ion bombardment of molybdenum and tungsten was studied for the incident energy range below 500 eV. When a sample is exposed to a positive ion beam, the work function decreases until steady state is reached with a total dose of less than ≅10 16 ions/cm 2 , for both tungsten and molybdenum. A steady state minimum work function surface is produced at an incident energy of ≅100 eV for molybdenum and at an incident energy of ≅45 eV for tungsten. Increasing the incident energy results in an increase in the work function corresponding to a decrease in the surface coverage of cesium. At incident energies less than that giving the minimum work function, the work function approaches that of cesium metal. At a given bombarding energy the cesium coverage of tungsten is uniformly less than that of molybdenum. Effects of hydrogen gas coadsorption were also examined. Hydrogen coadsorption does not have a large effect on the steady state work functions. The largest shifts in the work function due to the coadsorption of hydrogen occur on the samples when there is no cesium present. A theory describing the steady-state coverage was developed is used to make predictions for other materials. A simple sticking and sputtering relationship, not including implantation, cannot account for the steady state coverage. At low concentrations, cesium coverage of a target is proportional to the ratio of (1 - β)/γ where β is the reflection coefficient and γ is the sputter yield. High coverages are produced on molybdenum due to implantation and low backscattering, because molybdenum is lighter than cesium. For tungsten the high backscattering and low implantation result in low coverages

  17. Adhesion of evaporated titanium films to ion-bombarded polyethylene

    International Nuclear Information System (INIS)

    Bodoe, P.; Sundgren, J.

    1986-01-01

    Ti films were deposited onto high-density polyethylene (HDPE) samples by electron-beam evaporation. Prior to film deposition the samples were in situ pretreated by Ar ion bombardment using a sputter ion gun. The adhesion of the films, determined as the pull strength required for film failure, was measured as a function of ion dose. HDPE substrates processed at two different temperatures were examined. The adhesion of the Ti films to HDPE samples processed at roughly-equal150 0 C increased with the ion dose to a steady-state value corresponding to the cohesive strength of the HDPE substrate. The adhesion to the samples processed at roughly-equal200 0 C increased to a maximum and then decreased for further ion bombardment to a level of the same order as that for films deposited onto as-prepared samples. The effects of the ion bombardment upon the HDPE surface chemistry were examined by means of x-ray photoelectron spectroscopy (XPS). The ion bombardment resulted in dehydrogenation and cross linking of the surface region and for prolonged ion bombardment, a graphitelike surface was obtained. The film/substrate interface as well as the initial Ti film growth were examined by XPS analysis. A chemical interaction which resulted in Ti--C bonds was observed at the interface. The Ti film growth followed a pronounced three-dimensional growth mode on as-prepared surfaces whereas the ion bombardment resulted in a change toward a more two-dimensional growth mode. The difference in adhesion behavior for the two types of HDPE substrates was found to be due to a difference in the amounts of low molecular weight products present within the substrates

  18. Radiation effects in zinc oxide: zinc under bombardment with KeV ions

    International Nuclear Information System (INIS)

    Hastings, J.W.L.

    1967-01-01

    The energy loss, light output, depth of deterioration and the deterioration constant have been determined as a function of energy for various atomic projectiles impinging upon samples of a powdered Zn:Zn phosphor at energies below 105 KeV. The energy loss was observed as a reduction in the light output when projectiles traversed thin regions of previously damaged phosphor. The energy losses for heavier projectiles ( 14 N, 40 Ar, 84 Kr), relative to hydrogen, were found to be lower than those predicted for an amorphous stopping medium. The light output for a given projectile was found to be approximately proportional to the amount of energy lost in electronic collisions. When a phosphor is subjected to prolonged bombardment by heavy ions the deterioration depth is fairly well defined and its value was determined by a measurement of the energy loss of a hydrogen beam in traversing the damaged region. The depths are very large, are proportional to the projectile velocity and seem to be determined to a significant degree by electronic stopping. The deterioration constant, C, is a measure of the ability of a projectile to deteriorate a phosphor and its value is proportional to the number of defects introduced in unit distance along the trajectory of the projectile. The constant was determined from measurements of the efficiencies η, and η o , of partly damaged and undamaged phosphor, respectively, using the observed relationship, C (η/η o - 1) n -1 where n is the irradiation dose. The relative magnitudes of the C values for 14 N, 40 Ar were found to be in agreement with measured nuclear energy loss cross sections for these projectiles. (author)

  19. Ion bombardment induced ripple topography on amorphous solids

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Paton, F.; Williams, J.S.

    1977-01-01

    Earlier studies of the ion bombardment induced ripple morphology on the surfaces of amorphous solids when compared with geomorphological effects are shown to possess many similar features. The present study, with 40 keV Ar + ion bombarded Si suggests that analogies are incomplete, however, and that greater similarities with the process of macroscopic sandblasting (corrosion) exist. It is shown that the genesis of wave like structures on Si is from isolated features, which have the appearance of ripple trains, which are faceted. It is suggested that these features result from particle flux enhancement processes near surface dimples generated by stress induced surface lifting. (author)

  20. Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

    Energy Technology Data Exchange (ETDEWEB)

    Semsang, Nuananong, E-mail: nsemsang@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, LiangDeng [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► Ion beam bombarded rice seeds in vacuum. ► Studied seed survival from the ion bombardment. ► Determined various antioxidant enzyme activities and lipid peroxidation level. ► Discussed vacuum, ion species and ion energy effects. ► Attributed the changes to free radical formation due to ion bombardment. -- Abstract: Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29–60 keV and ion fluences of 1 × 10{sup 16} ions cm{sup −2}. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

  1. Electron emission from Inconel under ion bombardment

    International Nuclear Information System (INIS)

    Alonso, E.V.; Baragiola, R.A.; Ferron, J.; Oliva-Florio, A.

    1979-01-01

    Electron yields from clean and oxidized Inconel 625 surfaces have been measured for H + ,H 2 + ,He + ,O + and Ar + ions at normal incidence in the energy range 1.5 to 40 keV. These measurements have been made under ultrahigh vacuum and the samples were freed of surface contaminants by bombarding with high doses of either 20 keV H 2 + or 30 keV Ar + ions. Differences in yields of oxidized versus clean surfaces are explained in terms of differences in the probability that electrons internally excited escape upon reaching the surface. (author)

  2. Adhesion of silver films to ion-bombarded alumina

    International Nuclear Information System (INIS)

    Erck, R.A.; Fenske, G.R.

    1990-01-01

    This paper reports on silver films deposited on alumina substrates using ion bombardment. Adhesion strength was measured as a function of deposition conditions, sputter-cleaning time, and bombarding ion species, using a pull-type adhesion tester. Argon- and argon/oxygen-ion sputtering produced large increases in adhesion strength, with the greatest increases occurring for oxygen-ion bombardment. Adhesion strength increased monotonically as a function of ion sputtering time. At a given deposition rate, further enhancement of adhesion is seen with concurrent ion bombardment

  3. Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

    Science.gov (United States)

    Semsang, Nuananong; Yu, LiangDeng

    2013-07-01

    Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

  4. The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

    International Nuclear Information System (INIS)

    Li, Li; Liu, Honglin; Zou, Lin; Ding, Wanyu; Ju, Dongying; Chai, Weiping

    2013-01-01

    The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

  5. The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

    Energy Technology Data Exchange (ETDEWEB)

    Li, Li; Liu, Honglin; Zou, Lin [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Ding, Wanyu, E-mail: dwysd_2000@163.com [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116028 (China); Ju, Dongying [Department of Material Science and Engineering, Saitama Institute of Technology, Fukaya 369-0293 (Japan); Chai, Weiping [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China)

    2013-10-31

    The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

  6. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  7. Ion bombardment simulation: a review related to fusion radiation damage

    International Nuclear Information System (INIS)

    Brimhall, J.L.

    1975-01-01

    Prime emphasis is given to reviewing the ion bombardment data on the refractory metals molybdenum, niobium and vanadium which have been proposed for use in advanced fusion devices. The temperature and dose dependence of the void parameters are correlated among these metals. The effect of helium and hydrogen gas on the void parameters is also included. The similarities and differences of the response of these materials to high dose, high temperature radiation damage are evaluated. Comparisons are made with results obtained from stainless steel and nickel base alloys. The ion bombardment data is then compared and correlated, as far as possible, with existing neutron data on the refractory metals. The theoretically calculated damage state produced by neutrons and ions is also briefly discussed and compared to experimental data wherever possible. The advantages and limitations of ion simulation in relation to fusion radiation damage are finally summarized

  8. Temperature effect on the formation of a relief of diamond-like carbon coatings and its modification by ion bombardment

    International Nuclear Information System (INIS)

    Rubshtein, A.P.; Trakhtenberg, I.Sh.; Yugov, V.A.; Vladimirov, A.B.; Plotnikov, S.A.; Ponosov, Yu.S

    2006-01-01

    Using the method of pulsed arc sputtering of a graphite target the diamond-like coatings (DLC) ∼1.5 μm thick are deposited on a steel R6M5 substrate. The relief of the coatings obtained under various temperature conditions is investigated. Variations of carbon DLC surfaces are followed after their bombardment with accelerated argon or chemically active oxygen ions. Argon ion bombardment is established to be preferred for producing a smoothed-out DLC relief. It is shown that a DLC relief should be taken into account when measuring microhardness. It is recommended that transformation of interatomic bonds in irradiated subsurface layers be taken into consideration if information index of methods applied constitutes several monolayers [ru

  9. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

  10. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

    2013-01-01

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

  11. Effect of N4+ and C4+ ion beam bombardment on the optical and structural characteristics of ethylene-norbornene copolymer (TOPAS)

    International Nuclear Information System (INIS)

    Siljegovic, M.; Kacarevic-Popovic, Z.M.; Krkljes, A.N.; Stojanovic, Z.; Jovanovic, Z.M.

    2011-01-01

    Ion bombardment is a suitable tool to modify the optical properties of polymers. In the present study the effect of ion bombardment on the optical absorption of ethylene-norbornene copolymer (TOPAS) was studied using ultraviolet-visible (UV-Vis) and Raman spectroscopy. Polymer samples were bombarded with 60 keV C 4+ and N 4+ ion beams to various fluences ranging from 1.0 x 10 13 to 1.0 x 10 16 cm -2 . The indirect and direct band gaps have been determined. The values of direct band gaps have been found to be greater than the corresponding values of the indirect band gaps. Activation energy has been investigated as the function of ion fluences. The number of carbon atoms per conjugated length is determined according to modified Tauc's equation. The correlation between the optical band gap, activation energy for optical transition and the number of carbon atoms per conjugated length as well as chemical structure changes induced by ion beams irradiation have been discussed in the case of ethylene-norbornene copolymer.

  12. Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

    2016-08-15

    Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

  13. Directional effect on coloration in LiF crystal by H{sup +} and H{sub 2}{sup +} ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Mingle, Gan; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Jianer, Zeng; Takeshita, Hidefumi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    In the present paper, the first results are reported about the coloration in LiF crystals induced by bombardments of single hydrogen ions (H{sup +}) and molecular hydrogen ions (H{sub 2}{sup +}) with the same velocity under the <100> aligned and random conditions. For the single hydrogen ion irradiation, the coloration is rather simple. The F-type color center absorption under the <100> aligned condition becomes larger than that under the random condition with the dose increase because of larger fraction of electronic energy loss under channeling condition. On the contrary, the coloration for the molecular ions does not show big channeling effect. In the low dose region some difference can be seen but the difference of coloration is not observed any more with the dose increase. The pronounced coloration for molecular ions under the channeling condition is observed in comparison with that for single ions. (author)

  14. Modification of Polymer Materials by Ion Bombardment: Case Studies

    International Nuclear Information System (INIS)

    Bielinski, D. M.; Jagielski, J.; Lipinski, P.; Pieczynska, D.; Ostaszewska, U.; Piatkowska, A.

    2009-01-01

    The paper discusses possibility of application of ion beam bombardment for modification of polymers. Changes to composition, structure and morphology of the surface layer produced by the treatment and their influence on engineering and functional properties of wide range of polymer materials are presented. Special attention has been devoted to modification of tribological properties. Ion bombardment results in significant reduction of friction, which can be explained by increase of hardness and wettability of polymer materials. Hard but thin enough skin does not result in cracking but improves their abrasion resistance. Contrary to conventional chemical treatment ion beam bombardment works even for polymers hardly susceptible to modification like silicone rubber or polyolefines.

  15. Impact of Ion Bombardment on the Structure and Magnetic Properties of Fe78Si13B9 Amorphous Alloy

    Science.gov (United States)

    Wu, Yingwei; Peng, Kun

    2018-06-01

    Amorphous Fe78Si13B9 alloy ribbons were bombarded by ion beams with different incident angles ( θ ). The evolution of the microstructure and magnetic properties of ribbons caused by ion beam bombardment was investigated by x-ray diffraction, transmission electron microscope and vibrating sample magnetometer analysis. Low-incident-angle bombardment led to atomic migration in the short range, and high-incident-angle bombardment resulted in the crystallization of amorphous alloys. Ion bombardment induces magnetic anisotropy and affects magnetic properties. The effective magnetic anisotropy was determined by applying the law of approach to saturation, and it increased with the increase of the ion bombardment angle. The introduction of effective magnetic anisotropy will reduce the permeability and increase the relaxation frequency. Excellent high-frequency magnetic properties can be obtained by selecting suitable ion bombardment parameters.

  16. Computer simulation of the topography evolution on ion bombarded surfaces

    CERN Document Server

    Zier, M

    2003-01-01

    The development of roughness on ion bombarded surfaces (facets, ripples) on single crystalline and amorphous homogeneous solids plays an important role for example in depth profiling techniques. To verify a faceting mechanism based not only on sputtering by directly impinging ions but also on the contribution of reflected ions and the redeposition of sputtered material a computer simulation has been carried out. The surface in this model is treated as a two-dimensional line segment profile. The model describes the topography evolution on ion bombarded surfaces including the growth mechanism of a facetted surface, using only the interplay of reflected and primary ions and redeposited atoms.

  17. Topography of InP surface bombarded by O2+ ion beam

    International Nuclear Information System (INIS)

    Sun Zhaoqi

    1997-01-01

    The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

  18. Continuum radiation emitted from transition metals under ion bombardment

    International Nuclear Information System (INIS)

    El Boujlaidi, A.; Kaddouri, A.; Ait El Fqih, M.; Hammoum, K.; Aouchiche, H.

    2012-01-01

    Optical emission of transition metals has been studied during 5 keV Kr + ions bombardment within and without oxygen atmosphere in the colliding chamber. The observed spectra consist of a series of discrete lines superimposed on a broad continuum. Generally, the emission intensity was influenced by the presence of oxygen giving rise to transient effects as well as to an increase in the line intensity. The behaviours of spectral lines were successfully explained in term of electron-transfer process between the excited sputtered atom and the solid surface. In this work, we have focused our study on the continuous radiation emitted during ion bombardment. The experimental results suggest that the continuum emission depends on the nature of metal and very probably related to its electronic structure. The collective deactivation of 3d-shell electrons appears to play a role in the emission of this radiation. The observed enhancement in the presence of oxygen is probably due to a significant contribution of the oxide molecules. (authors)

  19. Anomalous microstructural changes in III-nitrides under ion bombardment

    International Nuclear Information System (INIS)

    Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

    2002-01-01

    Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

  20. Catalytic oxidation of silicon by cesium ion bombardment

    International Nuclear Information System (INIS)

    Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

    1991-01-01

    Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

  1. Facies of ion bombarded surfaces of brittle materials

    International Nuclear Information System (INIS)

    Primak, W.

    1975-12-01

    Materials were bombarded by protons, deuterons, and helium ions. The materials investigated were quartz; glasses; carbides and borides (SiC, B 4 C, TiB 2 ); oxides and nitrides (magnorite, sapphire, spinel, Al 2 O 3 , Si 3 N 4 , ZrO 2 , BaTiO 3 ); and miscellaneous (graphite, LiNbO 3 , copper). Oberservations were of growth, reflectivity, blistering, surface ablation, and swelling. Calculations were made of the effects of a layer, of its gradual transformation, and of the introduction of a gas. It is concluded that: Radiation blistering is not a primary process. Observations of blister formation and exfoliation cannot be used to calculate the surface ablation rate. The primary process is the development of a microporous layer which causes swelling. Visible blisters are caused by fracturing by transverse stresses in this layer and may occur during the bombardment, or in some cases, much later, in storage. There is no evidence of extreme gas pressures in the blisters. When blisters develop, they may be stable under continued bombardment for a dose many times that at which they formed. The swelling is a better index of the effects than is the blistering, and must be associated in most cases with permeability to the gas. Behavior with protons and deuterons is similar, with helium different. All but quartz, vitreous silica, and Pyrex are impervious to hydrogen and deuterium; only dense barium crown glass, carbides, borides, oxides, and nitrides are impervious to helium. Quartz shows swelling caused by conversion to a vitreous product of much lower density but no porosity, while for the others, most of the swelling and surface growth is caused by porosity. Surface ablation by the blistering process may be reduced by initial porosity or by initial or subsequent surface fissuring. However, for impervious materials, surface damage by the introduction of porosity would continue

  2. Chemical changes in titanate surfaces induced by Ar+ ion bombardment

    International Nuclear Information System (INIS)

    Gonzalez-Elipe, A.R.; Fernandez, A.; Espinos, J.P.; Munuera, G.; Sanz, J.M.

    1992-01-01

    The reduction effects and compositional changes induced by 3.5 keV Ar + bombardment of several titanates (i.e. SrTiO 3 , Al 2 TiO 5 and NiTiO 3 ) have been quantitatively investigated by XPS. In all the samples studied here the original Ti 4+ species were reduced to lower oxidation states (i.e. Ti 3+ and Ti 2+ ), although to a lesser extent than in pure TiO 2 . On the contrary, whereas Sr 2+ and Al 3+ seem to remain unaffected by Ar + bombardment, in agreement with the behaviour of the respective oxides (i.e. SrO and Al 2 O 3 ), Ni 2+ appears more easily reducible to Ni o in NiTiO 3 than in NiO. In addition, other specific differences were observed between the titanates, which reveal the existence of interesting chemical effects related to the presence of the different counter-ions in the titanates. In the case of Al 2 TiO 5 , its Ar + -induced decomposition to form TiO 2 + Al 2 O 3 could be followed by XPS. (Author)

  3. Electron emission from molybdenum under ion bombardment

    International Nuclear Information System (INIS)

    Ferron, J.; Alonso, E.V.; Baragiola, R.A.; Oliva-Florio, A.

    1981-01-01

    Measurements are reported of electron emission yields of clean molybdenum surfaces under bombardment with H + , H 2 + , D + , D 2 + , He + , N + , N 2 + , O + , O 2 + , Ne + , Ar + , Kr + and Xe + in the wide energy range 0.7-60.2 keV. The clean surfaces were produced by inert gas sputtering under ultrahigh vacuum. The results are compared with those predicted by a core-level excitation model. The disagreement found when using correct values for the energy levels of Mo is traced to wrong assumptions in the model. A substantially improved agreement with experiment is obtained using a model in which electron emission results from the excitation of valence electrons from the target by the projectiles and fast recoiling target atoms. (author)

  4. Destruction of C60 films by boron ion bombardment

    International Nuclear Information System (INIS)

    Ren Zhongmin; Du Yuancheng; Ying Zhifeng; Xiong Xiaxing; Li Fuming

    1995-01-01

    C 60 films are bombarded by 100 keV boron ion beams at doses ranging from 3x10 14 to 1x10 16 /cm 2 . The bombarded films are analyzed using Fourier transform infrared spectroscopy (FTIR), Raman spectra and X-ray diffraction (XRD) measurements. Most C 60 soccer-balls in the implanted region in the films are found to be broken at a dose over 1x10 15 /cm 2 , while at a dose less than 6x10 14 /cm 2 a few C 60 molecules remain undestroyed and maintain some crystal structure. The results of the analyses suggest a complete disintegration of a C 60 molecule under B + bombardment. ((orig.))

  5. The influence of ion bombardment on emission properties of carbon materials

    International Nuclear Information System (INIS)

    Chepusov, Alexander; Komarskiy, Alexander; Kuznetsov, Vadim

    2014-01-01

    When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

  6. The influence of ion bombardment on emission properties of carbon materials

    Energy Technology Data Exchange (ETDEWEB)

    Chepusov, Alexander, E-mail: chepusov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Komarskiy, Alexander, E-mail: aakomarskiy@gmail.com [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Kuznetsov, Vadim, E-mail: kuznetsov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation)

    2014-07-01

    When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

  7. Development of pits and cones on ion bombarded copper

    International Nuclear Information System (INIS)

    Tanovic, L.A.; Carter, G.; Nobes, M.J.; Whitton, I.L.; Williams, J.S.

    1980-01-01

    The formation of pits and cones on Ar ion bombarded copper has been studied. Carefully polished surfaces of large grained 99.999% pure copper crystals have been bombarded at normal incidence with 40 keV argon ions. The cone formation has been investigated for annealed and non-annealed crystals at room temperature and at 30 K and in the case of monocrystal and polycrystal samples. Although in the most other studies the presence of impurities is as a necessary condition for generation of cones and pits the obtained experimental results show that under certain conditions these features are formed on clean surfaces. It is shown that the dominant parameter in the production of cones on copper is the crystal orientation [ru

  8. Thermo-mechanical design aspects of mercury bombardment ion thrusters.

    Science.gov (United States)

    Schnelker, D. E.; Kami, S.

    1972-01-01

    The mechanical design criteria are presented as background considerations for solving problems associated with the thermomechanical design of mercury ion bombardment thrusters. Various analytical procedures are used to aid in the development of thruster subassemblies and components in the fields of heat transfer, vibration, and stress analysis. Examples of these techniques which provide computer solutions to predict and control stress levels encountered during launch and operation of thruster systems are discussed. Computer models of specific examples are presented.

  9. Angular dependence of secondary ion emission from silicon bombarded with inert gas ions

    International Nuclear Information System (INIS)

    Wittmaack, K.

    1984-01-01

    The emission of positive and negative, atomic and molecular secondary ions sputtered from silicon has been studied under ultrahigh vacuum conditions. The sample was bombarded with 2-12 keV Ar + and Xe + ions at angles of incidence between 0 0 and 60 0 to the surface normal. The angular dependence of the secondary ion intensity as well as the energy spectra of Si + and Si - were found to differ significantly. The effect is attributed mostly do differences in the rate of neutralization. The stability of molecular ions appears to be independent of the charge state. Supporting evidence is provided for the idea that multiply charged secondary ions are due to Auger de-excitation of sputtered atoms in vacuum. (orig.)

  10. Emission of positive oxygen ions from ion bombardment of adsorbate-covered metal surfaces

    International Nuclear Information System (INIS)

    Kaurin, M.G.

    1989-01-01

    During ion bombardment of metal surfaces, collision cascades can result in the emission of sputtered secondary ions. Recent experiments, however, have suggested that the emission of positive ions of electronegative adsorbates can result from electronic processes rather than from processes involving elastic collisions. This dissertation presents the results of experiments studying the emission of positive oxygen ions from oxygen- and carbon-monoxide-covered transition metal surfaces during bombardment by 25-250 keV ions of neon, argon, and krypton. The systems studied may be grouped into four categories. For a nickel substrate with adsorbed oxygen, the emission of positive oxygen ions proceeds through collision cascades. For titanium and niobium with adsorbed oxygen, the emission of positive oxygen ions is proportional to the primary ion velocity, consistent with emission from electronic processes; for a given primary ion velocity, the oxygen ion yield is independent of primary ion species. For substrates of molybdenum and tungsten, the oxygen yield is proportional to primary ion velocity, but the yield also depends on the primary ion species for a given primary ion velocity in a manner that is consistent with emission resulting from electronic processes. For these two groups, except for titanium, the yields during neon ion bombardment do not extrapolate (assuming linearity with primary ion velocity) to a nonzero value at zero beam velocity. The magnitude of the oxygen ion yields from these targets is not consistent with that expected if the emission were induced by secondary electrons emitted during the ion bombardment

  11. Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions

    Directory of Open Access Journals (Sweden)

    Xinghao Liang

    2018-02-01

    Full Text Available Silicon carbide (SiC is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.

  12. Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD.

    Science.gov (United States)

    Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

    2017-11-24

    In order to confirm the key role of Ar + ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar + ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar + ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar + ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar + ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar + ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar + ion state. As for vertically oriented few-layer graphene (VFG), Ar + ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar + ion bombardment, and these special NCMs are promising in many fields.

  13. Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD

    Science.gov (United States)

    Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

    2017-11-01

    In order to confirm the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar+ ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar+ ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar+ ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar+ ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar+ ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar+ ion state. As for vertically oriented few-layer graphene (VFG), Ar+ ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar+ ion bombardment, and these special NCMs are promising in many fields.

  14. Effect of radical species density and ion bombardment during ashing of extreme ultralow-κ interlevel dielectric materials

    International Nuclear Information System (INIS)

    Worsley, M. A.; Bent, S. F.; Fuller, N. C. M.; Tai, T. L.; Doyle, J.; Rothwell, M.; Dalton, T.

    2007-01-01

    The significance of ion impact and radical species density on ash-induced modification of an extreme ultralow-κ interlevel dielectric (ILD) material (κ 2 and Ar/N 2 dual frequency capacitive discharges is determined by combining plasma diagnostics, modeling of the ion angular distribution function, and material characterization such as angle resolved x-ray photoelectron spectroscopy. Radical species density was determined by optical emission actinometry under the same conditions and in the same reactor in a previous study by the present authors. ILD modification is observed and correlated with changes in the plasma for a range of pressures (5-60 mTorr), bias powers (0-350 W), and percent Ar in the source gas (0%, 85%). For the Ar/O 2 discharge, extensive modification of the ILD sidewall was observed for significant ion scattering conditions, whereas minimal modification of the ILD sidewall was observed under conditions of minimal or no ion scattering. Further, for an identical increase in the O-radical density (∼ an order of magnitude), a different degree of modification was induced at the ILD trench bottom surface depending on whether pressure or percent Ar was used to increase the radical density. The different degrees of modification seemingly correlated with the relative changes in the ion current for increasing pressure or percent Ar. For the Ar/N 2 discharge, reduced damage of the ILD sidewall and trench bottom surfaces was observed for increasing pressure (increasing N-radical density) and decreasing ion current to both surfaces. It is, thus, proposed that the mechanism for modification of the porous ILD is dominated by the creation of reactive sites by ion impact under the present conditions. A detailed discussion of the results which support this proposal is presented

  15. Model to estimate fractal dimension for ion-bombarded materials

    Energy Technology Data Exchange (ETDEWEB)

    Hu, A., E-mail: hu77@purdue.edu; Hassanein, A.

    2014-03-15

    Comprehensive fractal Monte Carlo model ITMC-F (Hu and Hassanein, 2012 [1]) is developed based on the Monte Carlo ion bombardment simulation code, i.e., Ion Transport in Materials and Compounds (ITMC) code (Hassanein, 1985 [2]). The ITMC-F studies the impact of surface roughness on the angular dependence of sputtering yield. Instead of assuming material surfaces to be flat or composed of exact self-similar fractals in simulation, we developed a new method to describe the surface shapes. Random fractal surfaces which are generated by midpoint displacement algorithm and support vector machine algorithm are combined with ITMC. With this new fractal version of ITMC-F, we successfully simulated the angular dependence of sputtering yield for various ion-target combinations, with the input surface roughness exponent directly depicted from experimental data (Hu and Hassanein, 2012 [1]). The ITMC-F code showed good agreement with the experimental data. In advanced, we compare other experimental sputtering yield with the results from ITMC-F to estimate the surface roughness exponent for ion-bombarded material in this research.

  16. Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

    2017-07-15

    Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

  17. Ion bombardment induced smoothing of amorphous metallic surfaces: Experiments versus computer simulations

    International Nuclear Information System (INIS)

    Vauth, Sebastian; Mayr, S. G.

    2008-01-01

    Smoothing of rough amorphous metallic surfaces by bombardment with heavy ions in the low keV regime is investigated by a combined experimental-simulational study. Vapor deposited rough amorphous Zr 65 Al 7.5 Cu 27.5 films are the basis for systematic in situ scanning tunneling microscopy measurements on the smoothing reaction due to 3 keV Kr + ion bombardment. The experimental results are directly compared to the predictions of a multiscale simulation approach, which incorporates stochastic rate equations of the Langevin type in combination with previously reported classical molecular dynamics simulations [Phys. Rev. B 75, 224107 (2007)] to model surface smoothing across length and time scales. The combined approach of experiments and simulations clearly corroborates a key role of ion induced viscous flow and ballistic effects in low keV heavy ion induced smoothing of amorphous metallic surfaces at ambient temperatures

  18. Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

    International Nuclear Information System (INIS)

    Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

    1988-01-01

    Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

  19. Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

    Science.gov (United States)

    Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

    2018-07-01

    Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

  20. Heavy-ion induced desorption yields of cryogenic surfaces bombarded with 4.2 MeV/u lead ions

    CERN Document Server

    Mahner, E; Evans, L; Kollmus, H; Küchler, D; Scrivens, R; Severin, D; Wengenroth, M; CERN. Geneva. ATS Department

    2011-01-01

    The ion-induced desorption experiment, installed in the CERN Heavy-Ion Accelerator LINAC 3, has been used to study the dynamic outgassing of cryogenic surfaces. Two different targets, bare and goldcoated copper, were bombarded under perpendicular impact with 4.2 MeV/u Pb54+ ions. Partial pressure rises of H2, CH4, CO, and CO2 and effective desorption yields were measured at 300, 77, and 6.3 K using single shot and continuous ion bombardment techniques. We find that the heavy-ion-induced desorption yield is temperature dependent and investigate the influence of CO gas cryosorbed at 6.3 K. The gain in desorption yield reduction at cryogenic temperature vanishes after several monolayers of CO are cryosorbed on both targets. In this paper we describe the new cryogenic target assembly, the temperature-dependent pressure rise, desorption yield, and gas adsorption measurements.

  1. Study on the growth of aligned carbon nanotubes controlled by ion bombardment

    International Nuclear Information System (INIS)

    Wang Biben; Zhang Bing; Zheng Kun; Hao Wei; Wang Wanlu; Liao Kejun

    2004-01-01

    Aligned carbon nanotubes were prepared by plasma-enhanced hot filament chemical vapor deposition using CH 4 , H 2 and NH 3 as reaction gases. It was investigated how different negative bias affects the growth of aligned carbon nanotubes. The results indicate that the average diameter of the aligned carbon nanotubes is reduced and the average length of the aligned carbon nanotubes is increased with increasing negative bias. Because of the occurrence of glow discharge, a cathode sheath forms near the substrate surface, and a number of ions are produced in it, and a very strong electrical field builds up near the substrate surface. Under the effect of the field, the strong bombardment of ions on the substrate surface will influence the growth of aligned carbon nanotubes. Combined with related theories, authors have analyzed and discussed the ion bombardment effects on the growth of the aligned carbon nanotudes

  2. Peculiarities of phase transformations in molybdenum-silicon system under ion bombardment

    International Nuclear Information System (INIS)

    Gurskij, L.I.; Zelenin, V.A.; Bobchenok, Yu.L.

    1984-01-01

    The problems of effect of ion bombardment and thermal treatment on the mechanisms of formation of transition layers and structural transformations in the molybdenum-silicon system, where the interface is subjected to ion bombardment through a film of molybdenum, are considered. The method of electron diffraction analysis has been applied to establish that at the molybdenum-silicon interface a transitional region appears during irradiation which has a semiamorphous structure at the doses up to 8x10 14 ion/cm 2 , while at higher doses it transforms into polycrystalline intermediate layer which consists of MoB and the compound close in composition to MoSisub(0.65). Due to thermal treatment for 60873 K a large-grain phase (Mo 3 Si+MoSi 2 ) appears in the transition layer below which a large-grain silicon layer is placed

  3. Investigation of the surface morphology of ion-bombarded biocompatible materials with a SEM and profilograph

    International Nuclear Information System (INIS)

    Kowalski, Z.W.

    1984-01-01

    The surface morphology (topography and roughness) is a very important factor which affects the response of biological tissue to an implant material. The effect of an incident ion beam on surface morphology of various biocompatible materials was studied. All materials were bombarded by Ar + ions at an applied voltage of 7 kV at various incident angles from 0 to 1.4 rad (0 to 80 deg) and at a beam current up to 0.1 mA. The surface topographies of ion-bombarded samples were examined with a Japan Electron Optics Laboratory, model JSM-35, scanning electron microscope. The roughness of the surface was calculated from the shape of a surface profile, which was recorded by a profilograph, the ME 10 (supplied by VEB Carl Zeiss, Jena). (author)

  4. Experiments on secondary ion emission with multicharged keV ion bombardement

    International Nuclear Information System (INIS)

    Della Negra, S.; Depauw, J.; Joret, H.; Le Beyec, Y.; Schweikert, E.A.

    1987-01-01

    An electron cyclotron resonance ion source was used to study the influence of the incident charge state of keV ions on secondary ion emission. The experiments were run with 18 keV Arn+ (1 < n < 11) beams produced by a minimafios source. Various types of targets were bombarded by the ion beam and the sputtered ionized species were identified by time of flight mass spectrometry. The experimental arrangement is detailed and preliminary results are indicated

  5. Influence of ion bombardment induced patterning of exchange bias in pinned artificial ferrimagnets on the interlayer exchange coupling

    Energy Technology Data Exchange (ETDEWEB)

    Schmalhorst, Jan; Reiss, Guenter; Hoenik, V. [Thin Films and Nanostructures, Department of Physics, Univ. Bielefeld (Germany); Weis, Tanja; Engel, Dieter; Ehresmann, Arno [Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology, Kassel Univ. (Germany)

    2007-07-01

    Artificial ferrimagnets (AFi) have many applications as, e.g., pinned reference electrodes in magnetic tunnel junctions. It is known that the application of ion bombardment induced magnetic patterning with He ions on a single layer reference electrode of magnetic tunnel junctions is possible. For some applications a combination of ion bombardment induced magnetic patterning and artificial ferrimagnets as a reference electrode is desirable. The effect of ion bombardment induced magnetic patterning on pinned artificial ferrimagnets with a Ru interlayer which is frequently used in magnetic tunnel junctions as well as pinned AFis with a Cu interlayer has been tested. Special attention has been given to the question whether the antiferromagnetic interlayer exchange coupling can withstand the ion dose necessary to turn the exchange bias.

  6. The influence of noble-gas ion bombardment on the electrical and optical properties of clean silicon surfaces

    International Nuclear Information System (INIS)

    Martens, J.W.D.

    1980-01-01

    A study of the effect of argon and helium ion bombardment on the electrical and optical properties of the clean silicon (211) surface is described. The objective of the study was to determine the effect of noble gas ions on the density of surface states at the clean silicon surface. (Auth.)

  7. Si(LMM) Auger electron emission from Si alloys by keV Ar/sup +/ ion bombardment, new effect and application

    Energy Technology Data Exchange (ETDEWEB)

    Hiraki, A; Kim, S; Imura, T; Iwami, M [Osaka Univ., Suita (Japan). Faculty of Engineering

    1979-09-01

    Si(LMM) Auger spectra excited by keV ion bombardment were studied in Si alloyed with several elements (Au, Cu, Pd, Ni, C, and H). The spectra differed completely from those of pure Si. The main characteristics are (1) the spectra are composed of two well-separated peaks (88 and 92 eV) called the atomic-like peak (88 eV) and the bulk-like peak (92 eV); and (2) the atomic-like peak is enhanced with respect to the bulk-like peak, and this enhancement becomes more obvious as the concentration of partner elements of the alloys are increased. The possible application of the present phenomena is proposed as a technique for detecting the homogeneity of Si alloy films in the three-dimensional sense - as an example, the three-dimensional distribution of hydrogen in hydrogenated amorphous silicon (a-Si-H).

  8. Effect of Ar bombardment on the electrical and optical properties of ...

    Indian Academy of Sciences (India)

    The influence of low-energy Ar ion beam irradiation on both electrical and optical properties of low-density polyethylene (LDPE) films is presented. The polymer films were bombarded with 320 keV Ar ions with fuences up to 1 × 10 15 cm − 2 . Electrical properties of LDPE films were measured and the effect of ion ...

  9. Composition and structure of ion-bombardment-induced growth cones on InP

    International Nuclear Information System (INIS)

    Malherbe, J.B.; Lakner, H.; Gries, W.H.

    1991-01-01

    The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

  10. Additional ion bombardment in PVD processes generated by a superimposed pulse bias voltage

    International Nuclear Information System (INIS)

    Olbrich, W.; Kampschulte, G.

    1993-01-01

    The superimposed pulse bias voltage is a tool to apply an additional ion bombardment during deposition in physical vapour deposition (PVD) processes. It is generated by the combination of a d.c. ground voltage and a higher d.c. pulse voltage. Using a superimposed pulse bias voltage in ion-assisted PVD processes effects an additional all-around ion bombardment on the surface with ions of higher energy. Both metal and reactive or inert-gas ions are accelerated to the surface. The basic principles and important characteristics of this newly developed process such as ion fluxes or deposition rates are shown. Because of pulsing the high voltage, the deposition temperature does not increase much. The adhesion, structure, morphology and internal stresses are influenced by these additional ion impacts. The columnar growth of the deposited films could be suppressed by using the superimposed pulse bias voltage without increasing the deposition temperature. Different metallizations (Cr and Cu) produced by arc and sputter ion plating are investigated. Carbon-fibre-reinforced epoxy are coated with PVD copper films for further treatment in electrochemical processes. (orig.)

  11. Annealing of defects in indium antimonide after ion bombardment

    International Nuclear Information System (INIS)

    Bogatyrev, V.A.; Kachurin, G.A.

    1977-01-01

    Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

  12. Particle-In-Cell/Monte Carlo Simulation of Ion Back Bombardment in Photoinjectors

    International Nuclear Information System (INIS)

    Qiang, Ji; Corlett, John; Staples, John

    2009-01-01

    In this paper, we report on studies of ion back bombardment in high average current dc and rf photoinjectors using a particle-in-cell/Monte Carlo method. Using H 2 ion as an example, we observed that the ion density and energy deposition on the photocathode in rf guns are order of magnitude lower than that in a dc gun. A higher rf frequency helps mitigate the ion back bombardment of the cathode in rf guns

  13. Considerations about projectile and target X-rays induced during heavy ion bombardment

    Science.gov (United States)

    Fernandes, F.; Bauer, D. V.; Duarte, A.; Ferrari, T. M.; Niekraszewicz, L. A. B.; Amaral, L.; Dias, J. F.

    2018-02-01

    In this work we present some results concerning the X-rays emitted by heavy ions during target bombardment. In this case, Cl4+ and Cl5+ ions with energies from 4 MeV to 10 MeV were employed to irradiate vitreous carbon planchets. Moreover, total X-ray production cross sections of titanium X-rays induced by chlorine ions were obtained as well for the same energy range. Only inner shell transitions were considered in the present work. The titanium target consisted of a thin film deposited over vitreous carbon planchets. The results indicate that the projectile X-ray yields increase as a function of the bombarding energy for the present energy range. Effects due to projectile charge state appears to be of minor importance at these low ion velocities. It is shown that a simple exponential function can represent the continuum background of such complex spectra. The chlorine transition rates Kβ/Kα obtained from chlorine acting as a projectile interacting with a carbon target are about half the value when compared to the chlorine Kβ/Kα ratios obtained when a LiCl target is bombarded with C+ and C3+ ions with energies from 2 MeV to 6 MeV. As far as the total X-ray production cross sections of Ti induced by chlorine ions are concerned, the ECPSSR theory underestimates the Ti total X-rays production cross sections by several orders of magnitude. The role of electron capture and possible mechanisms responsible for these effects are discussed.

  14. Large area smoothing of surfaces by ion bombardment: fundamentals and applications

    International Nuclear Information System (INIS)

    Frost, F; Fechner, R; Ziberi, B; Voellner, J; Flamm, D; Schindler, A

    2009-01-01

    Ion beam erosion can be used as a process for achieving surface smoothing at microscopic length scales and for the preparation of ultrasmooth surfaces, as an alternative to nanostructuring of various surfaces via self-organization. This requires that in the evolution of the surface topography different relaxation mechanisms dominate over the roughening, and smoothing of initially rough surfaces can occur. This contribution focuses on the basic mechanisms as well as potential applications of surface smoothing using low energy ion beams. In the first part, the fundamentals for the smoothing of III/V semiconductors, Si and quartz glass surfaces using low energy ion beams (ion energy: ≤2000 eV) are reviewed using examples. The topography evolution of these surfaces with respect to different process parameters (ion energy, ion incidence angle, erosion time, sample rotation) has been investigated. On the basis of the time evolution of different roughness parameters, the relevant surface relaxation mechanisms responsible for surface smoothing are discussed. In this context, physical constraints as regards the effectiveness of surface smoothing by direct ion bombardment will also be addressed and furthermore ion beam assisted smoothing techniques are introduced. In the second application-orientated part, recent technological developments related to ion beam assisted smoothing of optically relevant surfaces are summarized. It will be demonstrated that smoothing by direct ion bombardment in combination with the use of sacrificial smoothing layers and the utilization of appropriate broad beam ion sources enables the polishing of various technologically important surfaces down to 0.1 nm root mean square roughness level, showing great promise for large area surface processing. Specific examples are given for ion beam smoothing of different optical surfaces, especially for substrates used for advanced optical applications (e.g., in x-ray optics and components for extreme

  15. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

    International Nuclear Information System (INIS)

    Subramaniam, S.C.; Rezazadeh, A.A.

    2006-01-01

    The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

  16. Direct and Recoil-Induced Electron Emission from Ion-Bombarded Solids

    DEFF Research Database (Denmark)

    Holmen, G.; Svensson, B.; Schou, Jørgen

    1979-01-01

    The kinetic emission of secondary electrons from ion-bombarded solid surfaces is split into two contributions, a direct one caused by ionizing collisions between the bombarding ion and target atoms, and an indirect one originating from ionizing collisions undergone by recoil atoms with other target...... atoms. The direct contribution, which has been treated by several authors in previous studies, shows a behavior that is determined primarily by the electronic stopping power of the bombarding ion, while the indirect contribution is nonproportionally related to the nuclear stopping power. This latter...

  17. Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

    Energy Technology Data Exchange (ETDEWEB)

    Yu, L.D., E-mail: yuld@thep-center.org [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Phanchaisri, B. [Institute of Science and Technology Research, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Singkarat, S. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-05-01

    Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence.

  18. Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

    International Nuclear Information System (INIS)

    Yu, L.D.; Sangwijit, K.; Prakrajang, K.; Phanchaisri, B.; Thongkumkoon, P.; Thopan, P.; Singkarat, S.; Anuntalabhochai, S.

    2014-01-01

    Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence

  19. Auger emission from solid surfaces bombarded with ions

    International Nuclear Information System (INIS)

    Grizzi, Oscar.

    1986-01-01

    The Auger electron emission from Be, Na, Mg, Al and Si bombarded with 0,5-20 KeV noble gas ions is studied. Sharp structures of the Auger electron spectra of Na and Be were identified. A Monte Carlo program was adapted to simulate the colision cascade in the solid, inner shell excitations and Auger decays. From the comparision of experimental and simulated Auger intensities, the relative role of symmetric and asymmetric collisions in Be K- and Al L-shell excitation were evaluated. In the case of Be, the discussion of the exciting processes to higher projectile energies was extended. To this end, the simulation to early measurements of Be K X-ray yields was applied. From this analysis, information about the variations of the fluorescence yield and outer-shell occupation numbers of Be with projectile energy was obtained. The study of the shape of the sharp Auger structures and their dependence with the energy and incidence projectile angle gives information about the collisional processes, inner hole lifetimes and Auger decays. From the evaluation of the energy and angular distribution of the excited sputtered atoms and the interaction between them and the metallic-surface, the energy shift distributions in the Auger energies were obtained. From the comparison of these distributions with the experimental atomic peaks, the main causes of the broadening of these peaks were determined. (M.E.L.) [es

  20. A theoretical approach to sputtering due to molecular ion bombardment, 1

    International Nuclear Information System (INIS)

    Karashima, Shosuke; Ootoshi, Tsukuru; Kamiyama, Masahide; Kim, Pil-Hyon; Namba, Susumu.

    1981-01-01

    A shock wave model is proposed to explain theoretically the non-linear effects in sputtering phenomena by molecular ion bombardments. In this theory the sputtering processes are separated into two parts; one is due to linear effects and another is due to non-linear effects. The treatment of the linear parts is based on the statistical model by Schwarz and Helms concerning a broad range of atomic collision cascades. The non-linear parts are treated by the model of shock wave due to overlapping cascades, and useful equations to calculate the sputtering yields and the dynamical quantities in the system are derived. (author)

  1. Push-and-stick mechanism for charged and excited small cluster emission under ion bombardment

    International Nuclear Information System (INIS)

    Bitensky, I.S.; Parilis, E.S.; Wojciechowski, I.A.

    1992-01-01

    The mechanism for the formation, excitation and ionization of small clusters emitted under ion bombardment is discussed. It is shown that the increased degree of ionization for the transition metal dimers, trimers and tetramers can be explained by the existence of an additional effective channel for their formation, namely the associative ionization process. A simple estimate shows that the sticking together of a fast cascade atom and the pushed out surface atom is 30-40 times more effective for dimer formation, than the recombination of two fast atoms. This push-and-stick mechanism of cluster formation could also be effective for the formation of trimers and tetramers. (orig.)

  2. Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA

    International Nuclear Information System (INIS)

    Norarat, R.; Semsang, N.; Anuntalabhochai, S.; Yu, L.D.

    2009-01-01

    Ion beam bombardment of biological organisms has been recently applied to mutation breeding of both agricultural and horticultural plants. In order to explore relevant mechanisms, this study employed low-energy ion beams to bombard naked plasmid DNA. The study aimed at simulation of the final stage of the process of the ion beam bombardment of real cells to check whether and how very low-energy and low-fluence of ions can induce mutation. Argon and nitrogen ions at 5 keV and 2.5 keV respectively bombarded naked plasmid DNA pGFP to very low-fluences, an order of 10 13 ions/cm 2 . Subsequently, DNA states were analyzed using electrophoresis. Results provided evidences that the very low-energy and low-fluence ion bombardment indeed altered the DNA structure from supercoil to short linear fragments through multiple double strand breaks and thus induced mutation, which was confirmed by transfer of the bombarded DNA into bacteria Escherichia coli and subsequent expression of the marker gene.

  3. The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

    NARCIS (Netherlands)

    Holtslag, A.H.M.; Slager, U.C.; van Silfhout, Arend

    1985-01-01

    Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.

  4. Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

    International Nuclear Information System (INIS)

    Gerbi, Jennifer E.; Abelson, John R.

    2007-01-01

    We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

  5. Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

    2011-10-31

    In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

  6. Study on evolution of gases from fluoropolymer films bombarded with heavy ions

    International Nuclear Information System (INIS)

    Minamisawa, Renato Amaral; Zimmerman, Robert Lee; Budak, Satilmis; Ila, Daryush

    2008-01-01

    Ion beam bombardment provides a unique way of material modification by inducing a high degree of localized electronic excitation. The ion track, or affected volume along the ion path through the material is related to the total damage and possible structural changes. Here we study the evolution of gases emitted by poly(tetrafluorethylene-co-perfluoro-(propyl vinyl ether)) (PFA) fluoropolymer bombarded with MeV gold ions. The gas was monitored by a residual gas analyzer (RGA), as a function of the ion fluence. Micro-Raman, atomic force microscopy and optical absorption were used to analyze the chemical structure changes and sputtering yield

  7. Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

    Science.gov (United States)

    Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

    2017-09-08

    In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

  8. Suppression secondary electrons from target surface under pulsed ion beams bombardment

    International Nuclear Information System (INIS)

    Yang Zhen; Peng Yufei; Long Jidong; Lan Chaohui; Dong Pan; Shi Jinshui

    2012-01-01

    The producing mechanism of secondary electrons from target surface under ion beams bombardment is discussed. Several methods to suppress the secondary electrons in special vacuum devices and their advantages and disadvantages are introduced. The ways of using self-bias and curved surface target are proposed and verified in the experiment. The results show that the secondary electrons can be effectively suppressed when the self-bias is larger than 80 V. The secondary electron yield decreases by using curved surface target instead of flat target. The secondary electron yield calculated from the experimental data is about 0.67, which is slightly larger than the value (0.58) from the literature due to the impurities of the ion beam and target surface. The effect of suppressing the electron countercurrent by the self-bias method is analyzed. The result shows that the self-bias method can not only suppress the secondary electrons from target surface under ion beams bombardment, but also suppress the electron countercurrent resulting from the instability of the pulsed power source. (authors)

  9. High Energy Ion Bombardment Simulation Facility at the University of Pittsburgh

    International Nuclear Information System (INIS)

    McGruer, J.N.; Choyke, W.J.; Doyle, N.J.; Spitznagel, J.A.

    1975-01-01

    The High Energy Ion Bombardment Simulation (HEIBS) Facility located at the University of Pittsburgh is now operational. The E-22 tandem accelerator of the Nuclear Physics Laboratory, fitted with a UNIS source, provides the heavy high energy ions. An auxiliary Van de Graaff accelerator is used for the simultaneous production of He ions. Special features of the simulation laboratory are reported

  10. Ion induced electron emission statistics under Agm- cluster bombardment of Ag

    Science.gov (United States)

    Breuers, A.; Penning, R.; Wucher, A.

    2018-05-01

    The electron emission from a polycrystalline silver surface under bombardment with Agm- cluster ions (m = 1, 2, 3) is investigated in terms of ion induced kinetic excitation. The electron yield γ is determined directly by a current measurement method on the one hand and implicitly by the analysis of the electron emission statistics on the other hand. Successful measurements of the electron emission spectra ensure a deeper understanding of the ion induced kinetic electron emission process, with particular emphasis on the effect of the projectile cluster size to the yield as well as to emission statistics. The results allow a quantitative comparison to computer simulations performed for silver atoms and clusters impinging onto a silver surface.

  11. Immediate fabrication of flower-like graphene oxide by ion beam bombardment

    International Nuclear Information System (INIS)

    Cheng, Junjie; Zhang, Yuanyuan; Zhang, Guilong; Xiong, Shiquan; Pei, Renjun; Cai, Dongqing; Wu, Zhengyan

    2015-01-01

    Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

  12. Immediate fabrication of flower-like graphene oxide by ion beam bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Yuanyuan; Zhang, Guilong [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); University of Science and Technology of China, Hefei 230026 (China); Xiong, Shiquan [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Dongqing, E-mail: dqcai@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China)

    2015-12-01

    Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

  13. Measurement of electron emission due to energetic ion bombardment in plasma source ion implantation

    Science.gov (United States)

    Shamim, M. M.; Scheuer, J. T.; Fetherston, R. P.; Conrad, J. R.

    1991-11-01

    An experimental procedure has been developed to measure electron emission due to energetic ion bombardment during plasma source ion implantation. Spherical targets of copper, stainless steel, graphite, titanium alloy, and aluminum alloy were biased negatively to 20, 30, and 40 kV in argon and nitrogen plasmas. A Langmuir probe was used to detect the propagating sheath edge and a Rogowski transformer was used to measure the current to the target. The measurements of electron emission coefficients compare well with those measured under similar conditions.

  14. Target bombardment by ion beams generated in the Focus experiment

    International Nuclear Information System (INIS)

    Bernard, Alain; Coudeville, Alain; Garconnet, J.-P.; Jolas, A.; Mascureau, J. de; Nazet, Christian.

    1976-01-01

    In a Mather-Focus experiment, it was shown that 80% of the neutron emitted were generated through bombardment. The apparatus was operated with various targets at a distance of 13mm from the anode. In the low pressure regime, a deuteron beam of high energy was produced. Its emission duration was measured using a CD 2 target [fr

  15. Self-organised nano-structuring of thin oxide-films under swift heavy ion bombardment

    International Nuclear Information System (INIS)

    Bolse, Wolfgang

    2006-01-01

    Surface instabilities and the resulting self-organisation processes play an important role in nano-technology since they allow for large-array nano-structuring. We have recently found that the occurrence of such instabilities in thin film systems can be triggered by energetic ion bombardment and the subsequent self-assembly of the surface can be nicely controlled by fine-tuning of the irradiation conditions. The role of the ion in such processes is of double nature: If the instability is latently present already in the virgin sample, but self-assembly cannot take place because of kinetic barriers, the ion impact may just supply the necessary atomic mobility. On the other hand, the surface may become instable due to the ion beam induced material modifications and further irradiation then results in its reorganisation. In the present paper, we will review recently observed nano-scale self-organisation processes in thin oxide-films induced by the irradiation with swift heavy ions (SHI) at some MeV/amu energies. The first example is about SHI induced dewetting, which is driven by capillary forces already present in the as-deposited samples. The achieved dewetting pattern show an amazing similarity to those observed for liquid polymer films on Si, although in the present case the samples were kept at 80 K and hence have never reached their melting point. The second example is about self-organised lamellae formation driven by planar stresses, which are induced by SHI bombardment under grazing incidence and result in a surface instability and anisotropic plastic deformation (hammering effect). Taking advantage of these effects and modifying the irradiation procedure, we were able to generate more complex structures like NiO-'nano-towers' of 2 μm height and 200 nm in diameter

  16. Light ions cyclotron bombardment to simulate fast neutron radiation damage in nuclear materials

    International Nuclear Information System (INIS)

    Segura, E.; Lucki, G.; Aguiar, D.

    1984-01-01

    The applicability and limitations of the use of cyclotron light ions bombardment to simulate the effects of the neutron irradiation are presented. Light ions with energies of about 10 MeV are capable to produce homogeneous damage in specimens suitable for measuring bulk mechanical properties although their low damage rate of 10 -5 dpa.sec -1 limit the dose range to a few dpa. On the other hand, cyclotron alpha particle implantation provides a fast and convenient way of introducing helium with a minimum of side effects so that we can take advantage of this technique to get better understanding of the mechanism by which this insoluble gas produces high temperature embrittlement. Some experimental details such as dimensions and cooling techniques are described. Finally a description of the infrastructure for cyclotron alpha particle implantation and a creep-test facility of the Division of Radiation Damage at IPEN-CNEN/SP are presented. (Author) [pt

  17. Evolution of atomic-scale surface structures during ion bombardment: A fractal simulation

    International Nuclear Information System (INIS)

    Shaheen, M.A.; Ruzic, D.N.

    1993-01-01

    Surfaces of interest in microelectronics have been shown to exhibit fractal topographies on the atomic scale. A model utilizing self-similar fractals to simulate surface roughness has been added to the ion bombardment code TRIM. The model has successfully predicted experimental sputtering yields of low energy (less then 1000 eV) Ar on Si and D on C using experimentally determined fractal dimensions. Under ion bombardment the fractal surface structures evolve as the atoms in the collision cascade are displaced or sputtered. These atoms have been tracked and the evolution of the surface in steps of one monolayer of flux has been determined. The Ar--Si system has been studied for incidence energies of 100 and 500 eV, and incidence angles of 0 degree, 30 degree, and 60 degree. As expected, normally incident ion bombardment tends to reduce the roughness of the surface, whereas large angle ion bombardment increases the degree of surface roughness. Of particular interest though, the surfaces are still locally self-similar fractals after ion bombardment and a steady state fractal dimension is reached, except at large angles of incidence

  18. The surface topography of Inconel, stainless steel and copper after argon ion bombardment

    International Nuclear Information System (INIS)

    Vogelbruch, K.; Vietzke, E.

    1983-01-01

    Energetic particle bombardment of metals is known to change the surface topography. To simulate the behaviour of the first wall of a fusion device under real plasma conditions, we have investigated the surface topography of rotating targets after 30 keV argon ion bombardment at 70deg incident angle by electron scanning micrographs. Under these conditions Inconel 600, 601, 625, stainless steel, and copper showed no cones, pyramids or cliffs, but only etching figures and at higher ion doses relatively flat hills. Thus, it can be concluded, that the influence of energetic particles on the first wall of a fusion reactor is smaller than expected from the results of such sputtering experiments, which have dealt with the formation of surface structures under ion bombardment at constant incident direction. (author)

  19. Alteration of the UV-visible reflectance spectra of H2O ice by ion bombardment

    Science.gov (United States)

    Sack, N. J.; Boring, J. W.; Johnson, R. E.; Baragiola, R. A.; Shi, M.

    1991-01-01

    Satellite in the Jovian and Saturnian system exhibit differences in reflectivity between their 'leading' and 'trailing' surfaces which can affect the local vapor pressure. Since these differences are thought to be due to differences in the flux of bombarding magnetospheric ions, the influence of ion impact on the UV-visible reflectance of water ice surfaces (20-90 K) by keV ion bombardment was studied. An observed decrease in reflectance in the UV is attributed to rearrangement processes that affect the physical microstructure and surface 'roughness'. The ratio in reflectance of bombarded to freshly deposited films is compared to the ratio of the reflectance of the leading and trailing hemispheres for Europa and Ganymede.

  20. InN: Fermi level stabilization by low-energy ion bombardment

    International Nuclear Information System (INIS)

    Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

    2006-01-01

    The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Changes in phase composition and stress state of surface layers of VK20 hard alloy after ion bombardment

    International Nuclear Information System (INIS)

    Platonov, G.L.; Leonov, E.Yu.; Anikin, V.N.; Anikeev, A.I.

    1988-01-01

    Titanium ion bombardment of the surface of the hard VK20 alloy is studied for its effect on variations in the phase and chemical composition of its surface layers. It is stated that ion treatment results in the appearance of the η-phase of Co 6 W 6 C composition in the surface layer of the VK20 alloy, in the increase of distortions and decrease of coherent scattering blocks of the hard alloy carbide phase. Such a bombardment is found to provoke a transition of the plane-stressed state of the hard alloy surface into the volume-stressed state. It is established that ion treatment does not cause an allotropic transition of the cobalt phase α-modification, formed during grinding of the hard alloy, into the β-modification

  2. Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon

    International Nuclear Information System (INIS)

    Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T.

    2008-01-01

    Ion bombardment of crystalline silicon targets induces pattern formation by the creation of mobile surface species that participate in forming nanometer-scale structures. The formation of these mobile species on a Si(001) surface, caused by sub-keV argon ion bombardment, is investigated through molecular dynamics simulation of Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] silicon. Specific criteria for identifying and classifying these mobile atoms based on their energy and coordination number are developed. The mobile species are categorized based on these criteria and their average concentrations are calculated

  3. Ion bombardment induced surface topography modification of clean and contaminated single crystal Cu and Si

    International Nuclear Information System (INIS)

    Lewis, G.W.; Kiriakides, G.; Carter, G.; Nobes, M.J.

    1982-01-01

    Among the several factors which lead to depth resolution deterioration during sputter profiling, surface morphological modification resulting from local differences of sputtering rate can be important. This paper reports the results of direct scanning, electron microscopic studies obtained quasi-dynamically during increasing fluence ion bombardment of the evolution of etch pit structures on Si and Cu, and how such elaboration may be suppressed. It also reports on the elaboration of contaminant-induced cone generation for different ion species bombardment. The influence of such etch pit and cone generation on achievable depth resolution is assessed. (author)

  4. Ion bombardment and adsorption studies on ilmenite (FeTiO3) by X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Schulze, P.D.

    1983-01-01

    The effects of 5 KeV argon and oxygen ion bombardment on FeTiO3 (ilmenite) at low temperatures have been studied using x-ray photoelectron spectroscopy (XPS). Also, using this same technique, the adsorption of O 2 , NO, N 2 O, and CO at 300 K and the adsorption of O 2 and D 2 O at 150K have been studied. Argon and oxygen ion bombardment of ilmenite have confirmed earlier studies on metal oxides that argon ions generally reduce the anion species while oxygen ions generally oxidize the anion species. The two iron states involved were Fe sup +2 and Fe sup O. The reduction of Ti sup +4 was not verified although a significant shift in the Ti(2p1,3) binding energies toward the metallic state was observed after oxygen ion bombardment at low temperatures. At temperatures above 150K, O 2 adsorbs dissociatively on ilmenite while D 2 O adsorbs molecularly below 170K. Above 300 K NO, N 2 O, and CO do not appear to adsorb dissociatively. Low temperature adsorption of D 2 O was found to be inhibited by predosing the ilmenite with O 2

  5. Ion bombardment and adsorption studies on ilmenite (FeTiO3) by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Schulze, P. D.

    1983-01-01

    The effects of 5 KeV argon and oxygen ion bombardment on FeTiO3 (ilmenite) at low temperatures have been studied using X-ray photoelectron spectroscopy (XPS). Also, using this same technique, the adsorption of O2, NO, N2O, and CO at 300 K and the adsorption of O2 and D2O at 150K have been studied. Argon and oxygen ion bombardment of ilmenite have confirmed earlier studies on metal oxides that argon ions generally reduce the anion species while oxygen ions generally oxidize the anion species. The two iron states involved were Fe sup +2 and Fe sup O. The reduction of Ti sup +4 was not verified although a significant shift in the Ti(2p1,3) binding energies toward the metallic state was observed after oxygen ion bombardment at low temperatures. At temperatures above 150K, O2 adsorbs dissociatively on ilmenite while D2O adsorbs molecularly below 170K. Above 300 K No, N2O, and CO do not appear to adsorb dissociatively. Low temperature adsorption of D2O was found to be inhibited by predosing the ilmenite with O2.

  6. Mechanism of conductivity type conversion in p-Hg1-xCdxTe crystals under low energy ion bombardment

    International Nuclear Information System (INIS)

    Bogoboyashchij, V.V.; Izhnin, I.I.

    2000-01-01

    Conditions giving rise to accelerated diffusion of Hg under bombardment of p-Hg 1-x Cd x Te by low-energy particles are analyzed and probable mechanisms of the phenomenon are suggested, permitting qualitative and quantitative agreement with experimental data. Analysis indicates that basic regularities of p-n-conversion during Hg 0.8 Cd 0.2 Te crystal bombardment by neutralized ions can be easily explained in the framework of traditional notions of mercury chemical diffusion in this material. The regularities stem from specific features of defect formation in Hg 0.8 Cd 0.2 Te, on the one hand, and from a high concentration of intrinsic electrons and holes, screening effectively the defective layer electric field, on the other hand. The high rate of conversion during ion bombardment compared with the rate of conversion during annealing in mercury vapors can be explained by the fact that a great number of nonequilibrium interstitial atoms of mercury, by far exceeding the value during thermal annealing, is crated near the surface of the crystal bombarded [ru

  7. Phenomenology of the plastic flow of amorphous solids induced by heavy-ion bombardment

    International Nuclear Information System (INIS)

    Klaumuenzer, S.; Benyagoub, A.

    1991-01-01

    Amorphous solids exhibit at temperatures far below the glass transition plastic flow when bombarded with fast heavy ions (kinetic energy ∼1 MeV/u). The dimensions perpendicular to the ion beam grow whereas the sample dimension parallel to the ion beam shrinks. The strain tensor describing phenomenologically these dimensional changes is derived from symmetry considerations and compared with experiment. Particular attention is devoted to angular changes, which have not been discussed in this context so far

  8. Excited-atom production by electron and ion bombardment of alkali halides

    International Nuclear Information System (INIS)

    Walkup, R.E.; Avouris, P.; Ghosh, A.P.

    1987-01-01

    We present experimental results on the production of excited atoms by electron and ion bombardment of alkali halides. For the case of electron bombardment, Doppler shift measurements show that the electronically excited atoms have a thermal velocity distribution in equilibrium with the surface temperature. Measurements of the absolute yield of excited atoms, the distribution of population among the excited states, and the systematic dependence on incident electron current and sample temperature support a model in which the excited atoms are produced by gas-phase collisions between desorbed ground-state atoms and secondary electrons. In contrast, for the case of ion bombardment, the excited atoms are directly sputtered from the surface, with velocity distributions characteristic of a collision cascade, and with typical energies of --10 eV

  9. Kinetics of interaction from low-energy-ion bombardment of surfaces

    International Nuclear Information System (INIS)

    Horton, C.C.

    1988-01-01

    The kinetics of interaction from low energy oxygen ion bombardment of carbon and Teflon surfaces have been investigated. The surfaces were bombarded with 4.5 to 93 eV oxygen ions and emitted species were observed with a mass spectrometer. To obtain the kinetic information, the ion beam was square pulse modulated and reaction products were observed as a function of time. The kinetic information is contained in the response of the emitted species to the pulsed ion beam. Oxygen bombardment of carbon produced CO in three parallel branches with each following an adsorption-desorption process. The fast branch, with a rate constants of 12,000/sec, appeared to be sputter induced an was absent below about 19 eV. The medium and slow branches, with rate constants of 850/sec and 45/sec respectively, has little energy dependence and appeared to be due to chemical sputtering from two sites. The ratio of the fraction of the medium branch to that of the slow was constant at 1:3. The bombardment of Teflon produced CF in two parallel branches, with one following a series process and the other an adsorb-desorb process. The rate constant of the other branch were 22,000/sec and 7,000/sec and the rate constant of the other branch was 90/sec. The total signal fell monotonically with decreasing ion energy with the fraction for each branch holding constant at 71% for the series and 29% for the adsorb-desorb

  10. Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

    2011-12-15

    The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

  11. Friction and wear measurements of sputtered MoS/sub x/ films amorphized by ion bombardment

    International Nuclear Information System (INIS)

    Mikkelsen, N.J.; Chevallier, J.; Soerensen, G.; Straede, C.A.

    1988-01-01

    The present study presents an experimental evidence for amorphization of rf sputtered MoS/sub x/ films by ion bombardment. Even at low doses (3 x 10 15 ions/cm 2 ) of 400 keV argon ions a complete amorphization was confirmed by x-ray diffraction analysis and transmission electron microscopy. As a result of the ion bombardment the film density increased 100% to almost the bulk value for MoS 2 . The friction coefficient for ion beam amorphized MoS/sub x/ was measured to be 0.04 in agreement with the values reported for crystalline films but disagreeing considerably with the friction coefficient of 0.4 previously reported for amorphous films

  12. In-Situ atomic force microscopic observation of ion beam bombarded plant cell envelopes

    International Nuclear Information System (INIS)

    Sangyuenyongpipat, S.; Yu, L.D.; Brown, I.G.; Seprom, C.; Vilaithong, T.

    2007-01-01

    A program in ion beam bioengineering has been established at Chiang Mai University (CMU), Thailand, and ion beam induced transfer of plasmid DNA molecules into bacterial cells (Escherichia coli) has been demonstrated. However, a good understanding of the fundamental physical processes involved is lacking. In parallel work, onion skin cells have been bombarded with Ar + ions at energy 25 keV and fluence1-2 x 10 15 ions/cm 2 , revealing the formation of microcrater-like structures on the cell wall that could serve as channels for the transfer of large macromolecules into the cell interior. An in-situ atomic force microscope (AFM) system has been designed and installed in the CMU bio-implantation facility as a tool for the observation of these microcraters during ion beam bombardment. Here we describe some of the features of the in-situ AFM and outline some of the related work

  13. Energy dependence of angular distributions of sputtered particles by ion-beam bombardment at normal incidence

    International Nuclear Information System (INIS)

    Matsuda, Yoshinobu; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori; Yamamura, Yasunori.

    1986-01-01

    The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an overcosine distribution of about 20 %. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively. (author)

  14. Influence of ion bombardment on growth and properties of PLD created DLC films

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Písařík, Petr; Kocourek, Tomáš; Zemek, Josef; Lukeš, J.

    2013-01-01

    Roč. 110, č. 4 (2013), s. 943-947 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional research plan: CEZ:AV0Z10100522 Keywords : DLC * ion bombardment * sp3 /sp2 * thin films * PLD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.694, year: 2013

  15. A note on the random walk theory of recoil movement in prolonged ion bombardment

    International Nuclear Information System (INIS)

    Koponen, Ismo

    1994-01-01

    A characteristic function is derived for the probability distribution of final positions of recoil atoms in prolonged ion bombardment of dense matter. The derivation is done within the framework of Poissonian random walk theory using a jump distribution, which is somewhat more general than those studied previously. ((orig.))

  16. Influence of keV-He ion bombardment on the magnetic properties of Co/Pd multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Mueglich, Nicolas; Buhl, Oliver; Weis, Tanja; Engel, Dieter; Ehresmann, Arno [Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Hellwig, Olav [San Jose Research Center, HGST, A Western Digital Company, CA (United States)

    2013-07-01

    Thin films of ferromagnetic Co separated by Pd films with thicknesses in the first ferromagnetic maximum of interlayer exchange coupling are magnetically dominated by perpendicular-to-plane anisotropy and labyrinth stripe domain patterns in remanence. During the magnetization reversal of such a multilayer system domain nucleation and domain wall movement can be observed for different external magnetic fields H. The influence of keV-He ion bombardment on the microstructure of the system and its resultant decrease of magnetic anisotropy has been investigated by vibrating sample magnetometry, polar magneto-optical Kerr effect and magnetic force microscopy. It is shown that areas of ferromagnetic in-plane anisotropy are created due to the ion bombardement and that the system shows an increasing quotient of superparamagnetism in the deeper layers of the multilayersystem.

  17. Ion peening and stress relaxation induced by low-energy atom bombardment of covalent solids

    International Nuclear Information System (INIS)

    Koster, Monika; Urbassek, Herbert M.

    2001-01-01

    Using molecular-dynamics simulation, we study the buildup and relaxation of stress induced by low-energy (≤150 eV) atom bombardment of a target material. The effect is brought out most clearly by using an initially compressed specimen. As target material, we employ Si, based on the Tersoff potential. By varying the bond strength in the potential, we can specifically study its effect on damage production and stress changes. We find that in general, stress is relaxed by the atom bombardment; only for low bombarding energies and strong bonds, atom bombardment increases stress. We rationalize this behavior by considering the role of energized atoms and of recoil-implanted target atoms

  18. Comparison of Se and Te clusters produced by ion bombardment

    Directory of Open Access Journals (Sweden)

    Trzyna Małgorzata

    2017-01-01

    Full Text Available Nanostructures based on tellurium and selenium are materials used as components for the manufacturing topological insulators. Therefore it is crucial to precisely characterize these materials. In this work the emission of selenium and tellurium cluster ions, sputtered by Bi+ primary ion guns, was investigated by using Time-of-Flight Secondary Ion Mass Spectrometry (TOF SIMS. It has been found that BixTex and BixSex clusters appear in addition to Sex and Tex clusters in the mass range up to ~ 1300 m/z. Local maxima or minima (magic numbers are observed in the ion intensity versus a number of atoms per cluster for both positive and negative ions spectra for all types of clusters and primary ions used. These extrema can be attributed to different yield and stability of certain clusters but also to fragmentation of high-mass clusters.

  19. Comparison of Se and Te clusters produced by ion bombardment

    Science.gov (United States)

    Trzyna, Małgorzata

    2017-01-01

    Nanostructures based on tellurium and selenium are materials used as components for the manufacturing topological insulators. Therefore it is crucial to precisely characterize these materials. In this work the emission of selenium and tellurium cluster ions, sputtered by Bi+ primary ion guns, was investigated by using Time-of-Flight Secondary Ion Mass Spectrometry (TOF SIMS). It has been found that BixTex and BixSex clusters appear in addition to Sex and Tex clusters in the mass range up to 1300 m/z. Local maxima or minima (magic numbers) are observed in the ion intensity versus a number of atoms per cluster for both positive and negative ions spectra for all types of clusters and primary ions used. These extrema can be attributed to different yield and stability of certain clusters but also to fragmentation of high-mass clusters.

  20. Modelling and simulation of surface morphology driven by ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Yewande, E.O.

    2006-05-02

    Non-equilibrium surfaces, at nanometer length scales, externally driven via bombardment with energetic particles are known to exhibit well ordered patterns with a variety of applications in nano-technology. These patterns emerge at time scales on the order of minutes. Continuum theory has been quite successful in giving a general picture of the processes that interplay to give the observed patterns, as well as how such competition might determine the properties of the nanostructures. However, continuum theoretical descriptions are ideal only in the asymptotic limit. The only other theoretical alternative, which happens to be more suitable for the characteristic length-and time-scales of pattern formation, is Monte Carlo simulation. In this thesis, surface morphology is studied using discrete solid-on-solid Monte Carlo models of sputtering and surface diffusion. The simulations are performed in the context of the continuum theories and experiments. In agreement with the experiments, the ripples coarsen with time and the ripple velocity exhibits a power-law behaviour with the ripple wavelength, in addition, the exponent was found to depend on the simulation temperature, which suggests future experimental studies of flux dependence. Moreover, a detailed exploration of possible topographies, for different sputtering conditions, corresponding to different materials, was performed. And different surface topographies e.g. holes, ripples, and dots, were found at oblique incidence, without sample rotation. With sample rotation no new topography was found, its only role being to destroy any inherent anisotropy in the system. (orig.)

  1. FTIR and Vis-FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardment

    Science.gov (United States)

    Laskarakis, A.; Gravalidis, C.; Logothetidis, S.

    2004-02-01

    The continuously increasing application of polymeric materials in many scientific and technological fields has motivated an extensive use of polymer surface treatments, which modify the physical and chemical properties of polymer surfaces leading to surface activation and promotion of the surface adhesion. Fourier transform IR spectroscopic ellipsometry (FTIRSE) and phase modulated ellipsometry (PME) in the IR and Vis-FUV spectral regions respectively have been employed for in situ and real time monitoring of the structural changes on the polymer surface obtained by Ar + ion bombardment. The polymers were industrially supplied polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) membranes. The Ar + ion bombardment has found to change the chemical bonding of the films and especially the amount of the CO, C-C and CC groups. The detailed study of the FTIRSE spectra reveals important information about the effect of the Ar + ion bombardment on each of the above bonding groups. Also, the modification of the characteristic features, attributed to electronic transitions in specific bonds of PET and PEN macromolecules, has been studied using PME.

  2. FTIR and Vis-FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardment

    International Nuclear Information System (INIS)

    Laskarakis, A.; Gravalidis, C.; Logothetidis, S.

    2004-01-01

    The continuously increasing application of polymeric materials in many scientific and technological fields has motivated an extensive use of polymer surface treatments, which modify the physical and chemical properties of polymer surfaces leading to surface activation and promotion of the surface adhesion. Fourier transform IR spectroscopic ellipsometry (FTIRSE) and phase modulated ellipsometry (PME) in the IR and Vis-FUV spectral regions respectively have been employed for in situ and real time monitoring of the structural changes on the polymer surface obtained by Ar + ion bombardment. The polymers were industrially supplied polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) membranes. The Ar + ion bombardment has found to change the chemical bonding of the films and especially the amount of the C-O, C-C and C-C groups. The detailed study of the FTIRSE spectra reveals important information about the effect of the Ar + ion bombardment on each of the above bonding groups. Also, the modification of the characteristic features, attributed to electronic transitions in specific bonds of PET and PEN macromolecules, has been studied using PME

  3. Forming controlled inset regions by ion implantation and laser bombardment

    International Nuclear Information System (INIS)

    Gibbons, J.F.

    1981-01-01

    A semiconductor integrated circuit structure in which the inset regions are ion implanted and laser annealed to maintain substantially the dimensions of the implantation and the method of forming inset implanted regions having controlled dimensions

  4. Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

    International Nuclear Information System (INIS)

    Sone, Kazuho; Shiraishi, Kensuke

    1975-04-01

    The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage. (auth.)

  5. Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

    Energy Technology Data Exchange (ETDEWEB)

    Sone, K; Shiraishi, K

    1975-04-01

    The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage.

  6. Influence of substrate pre-treatments by Xe{sup +} ion bombardment and plasma nitriding on the behavior of TiN coatings deposited by plasma reactive sputtering on 100Cr6 steel

    Energy Technology Data Exchange (ETDEWEB)

    Vales, S., E-mail: sandra.vales@usp.br [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Brito, P., E-mail: ppbrito@gmail.com [Pontifícia Universidade Católica de Minas Gerais (PUC-MG), Av. Dom José Gaspar 500, 30535-901 Belo Horizonte, MG (Brazil); Pineda, F.A.G., E-mail: pipe8219@gmail.com [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Ochoa, E.A., E-mail: abigail_ochoa@hotmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Droppa, R., E-mail: roosevelt.droppa@ufabc.edu.br [Universidade Federal do ABC (UFABC), Av. dos Estados, 5001, Santo André, SP CEP 09210-580 (Brazil); Garcia, J., E-mail: jose.garcia@sandvik.com [Sandvik Coromant R& D, Lerkrogsvägen 19, SE-12680, Stockholm (Sweden); Morales, M., E-mail: monieriz@gmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Alvarez, F., E-mail: alvarez@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); and others

    2016-07-01

    In this paper the influence of pre-treating a 100Cr6 steel surface by Xe{sup +} ion bombardment and plasma nitriding at low temperature (380 °C) on the roughness, wear resistance and residual stresses of thin TiN coatings deposited by reactive IBAD was investigated. The Xe{sup +} ion bombardment was carried out using a 1.0 keV kinetic energy by a broad ion beam assistance deposition (IBAD, Kaufman cell). The results showed that in the studied experimental conditions the ion bombardment intensifies nitrogen diffusion by creating lattice imperfections, stress, and increasing roughness. In case of the combined pre-treatment with Xe{sup +} ion bombardment and subsequent plasma nitriding, the samples evolved relatively high average roughness and the wear volume increased in comparison to the substrates exposed to only nitriding or ion bombardment. - Highlights: • Effect of Xe ion bombardment and plasma nitriding on TiN coatings was investigated. • Xe ion bombardment with 1.0 KeV increases nitrogen retention in plasma nitriding. • 1.0 KeV ion impact energy causes sputtering, thus increasing surface roughness. • TiN coating wear is minimum after plasma nitriding due to lowest roughness.

  7. Ion bombardment damage in a modified Fe-9Cr-1Mo steel

    International Nuclear Information System (INIS)

    Farrell, K.; Lee, E.H.

    1984-01-01

    A normalized-and-tempered Fe-9Cr-1Mo steel, with small Nb and V additions, was bombarded with 4-MeV iron ions to 100 dpa at 400, 450, 500, 550, and 600 0 C. Major damage feature was dislocation tangles which coarsened with increasing bombardment temperature. Sparse cavities were heterogeneously distributed at 500 and 550 0 C. Incorporation of helium and deuterium simultaneously in the bombardments at rates of 10 and 45 appM/dpa, respectively, introduced very high concentrations of small cavities at all temperatures, many of them on grain boundaries. These cavities were shown to be promoted by helium. A small fraction of the matrix cavities exhibited bias-driven growth at 500 and 550 0 C, with swelling 0 C higher than the peak swelling temperature found in neutron irradiations, which is compatible with the higher damage rate used in the ion bombardments. High concentrations of subgrain boundaries and dislocations resulting from the heat treatment, and unbalanced cavity and dislocation sink strengths in the damage structures contribute to the swelling resistance. Such resistance may not be permanent. High densities of bubbles on grain boundaries indicate a need for helium embrittlement tests

  8. Treatment of PVC using an alternative low energy ion bombardment procedure

    Science.gov (United States)

    Rangel, Elidiane C.; dos Santos, Nazir M.; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Rangel, Rita de Cássia C.; Cruz, Nilson C.

    2011-12-01

    In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

  9. Treatment of PVC using an alternative low energy ion bombardment procedure

    International Nuclear Information System (INIS)

    Rangel, Elidiane C.; Santos, Nazir M. dos; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Cássia C Rangel, Rita de; Cruz, Nilson C.

    2011-01-01

    In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

  10. XPS study of vanadium surface oxidation by oxygen ion bombardment

    Czech Academy of Sciences Publication Activity Database

    Alov, N.; Kutsko, D.; Spirovová, Ilona; Bastl, Zdeněk

    2006-01-01

    Roč. 600, č. 8 (2006), s. 1628-1631 ISSN 0039-6028 R&D Projects: GA ČR GA104/04/0467 Institutional research plan: CEZ:AV0Z40400503 Keywords : vanadium oxide * oxide film * ion-beam oxidation * X-ray photoelectron spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.880, year: 2006

  11. Modification of metallic surfaces by positive ion bombardment

    International Nuclear Information System (INIS)

    Rickards C, J.

    1989-01-01

    Reported are the fundamentals and recent advances in the use of ion implantation techniques and gaseous emissions to modify metal surfaces. The physical phenomena involved, the necessary equipment and some applications which have been successful on an industrial scale are described. (Author). 13 refs, 1 fig

  12. Structural and magnetic properties of ion-beam bombarded Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Lin, K.W.; Guo, J.Y.; Lin, S.R.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Tsai, C.J. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300 (China); Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

    2007-12-15

    A series of [Pt(2 nm)/Co(2 nm)]{sub 10}/Pt(30 nm) multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt{sub 3} phases were developed with increasing End-Hall voltage (V{sub EH}) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing V{sub EH}. After annealing, the formation of CoPt{sub 3} was observed in these ion-beam bombarded samples, resulting in lower coercivities (H{sub c}{proportional_to} 50 Oe). The depressed transition temperature of CoPt{sub 3} for films deposited with the largest V{sub EH} was attributed to distorted CoPt{sub 3} structures that appeared with annealing. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Study of ion-bombardment-induced surface topography of silver by stereophotogrammetric method

    International Nuclear Information System (INIS)

    Fayazov, I.M.; Sokolov, V.N.

    1992-01-01

    The ion-bombardment-induced surface topography of polycrystalline silver was studied using the stereophotogrammetric method. The samples were irradiated with 30keV argon ions at fairly high fluences (> 10 17 ions/cm 2 ). The influence of the inclination angle of the sample in the SEM on the cone shape of a SEM-picture is discussed. To analyse the irradiated surfaces covered with cones, the SEM-stereotechnique is proposed. The measurements of the sample section perpendicular to the incidence plane are also carried out. (author)

  14. Angular and energy dependence of ion bombardment of Mo/Si multilayers

    DEFF Research Database (Denmark)

    Voorma, H.J.; Louis, E.; Bijkerk, F.

    1997-01-01

    The process of ion bombardment is investigated for the fabrication of Mo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layers to smoothen the layers by removing an additional thickness of the Si layer. In this stu......, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates....

  15. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

    International Nuclear Information System (INIS)

    Williams, R.S.

    1982-01-01

    Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

  16. Engineering catalytic activity via ion beam bombardment of catalyst supports for vertically aligned carbon nanotube growth

    Science.gov (United States)

    Islam, A. E.; Nikolaev, P.; Amama, P. B.; Zakharov, D.; Sargent, G.; Saber, S.; Huffman, D.; Erford, M.; Semiatin, S. L.; Stach, E. A.; Maruyama, B.

    2015-09-01

    Carbon nanotube growth depends on the catalytic activity of metal nanoparticles on alumina or silica supports. The control on catalytic activity is generally achieved by variations in water concentration, carbon feed, and sample placement on a few types of alumina or silica catalyst supports obtained via thin film deposition. We have recently expanded the choice of catalyst supports by engineering inactive substrates like c-cut sapphire via ion beam bombardment. The deterministic control on the structure and chemistry of catalyst supports obtained by tuning the degree of beam-induced damage have enabled better regulation of the activity of Fe catalysts only in the ion beam bombarded areas and hence enabled controllable super growth of carbon nanotubes. A wide range of surface characterization techniques were used to monitor the catalytically active surface engineered via ion beam bombardment. The proposed method offers a versatile way to control carbon nanotube growth in patterned areas and also enhances the current understanding of the growth process. With the right choice of water concentration, carbon feed and sample placement, engineered catalyst supports may extend the carbon nanotube growth yield to a level that is even higher than the ones reported here, and thus offers promising applications of carbon nanotubes in electronics, heat exchanger, and energy storage.

  17. Spatial variation in void volume during charged particle bombardment: the effects of injected interstitials

    International Nuclear Information System (INIS)

    Lee, E.H.; Mansur, L.K.; Yoo, M.H.

    1979-01-01

    Experimental observations of the void volume at several depths along the range of 4 MeV Ni ions in 316 stainless steel are reported. The specimens were first preconditioned by neutron irradiation at temperatures of 450 and 584 0 C to fluences of approximately 8 x 10 26 n/m -2 . The void volume after ion bombardment to 60 dpa at the peak damage depth is significantly lower at the peak damage depth than in the region between that and the free surface. The ratio of the step height to void volume at the depth of peak energy deposition between regions masked from and exposed to the beam is strongly dependent on bombardment temperature. The reduction of void volume near the peak damage depth is larger for the 584 0 C than for the 450 0 C preconditioned material. These observations are consistent with recent theoretical results which account for the injection of the bombarding ions as self-interstitials. The theory necessary to understand the effect is developed

  18. Ejection of fast recoil atoms from solids under ion bombardment (medium-energy ion scattering by solid surfaces: Pt. 3)

    International Nuclear Information System (INIS)

    Dodonoy, A.I.; Mashkova, E.S.; Molchanov, V.A.

    1989-01-01

    This paper is the third part of our review surface scattering. Part I, which was devoted to the scattering of ions by the surfaces of disordered solids, was published in 1972; Part II, concerning scattering by crystal surfaces, was published in 1974. Since the publication of these reviews the material contained in them has become obsolete in many respects. A more recent account of the status of the problem has been given in a number of studies, including the book by E.S. Mashkova and V.A. Molchanov, Medium-Energy Ion Scattering by Solid Surfaces (Atomizdat, Moscow, 1980), than extended version of which was published by North-Holland in 1985. We note, however, that at the time these reviews were written the study of fast recoil atoms had not been carried out systematically; the problem was studied only as a by-product of surface scattering and sputtering. For this reason, in the above-mentioned works and in other reviews the data relating to recoil atoms were considered only occasionally. In recent years there have appeared a number of works - theoretical, experimental and computer -specially devoted to the study of the ejection of recoil atoms under ion bombardment. A number of interesting effects, which are due to the crystal structure of the target, have been discovered. It therefore, appeared desirable to us to systematize the available material and to present it as Part III of our continuing review. (author)

  19. Improvement of the wear resistance of electroplated Au-Ni coatings by Zr ion bombardment of Ni-B sublayer

    International Nuclear Information System (INIS)

    Lyazgin, Alexander; Shugurov, Artur; Sergeev, Viktor; Neufeld, Vasily; Panin, Alexey; Shesterikov, Evgeny

    2015-01-01

    The effect of bombardment of the Ni-B sublayer by Zr ion beams on the surface morphology and tribomechanical properties of Au-Ni coatings was investigated. It was found that the treatment has no significant effect on the surface roughness and grain size of the Au-Ni coatings, while it provides essential reducing of their friction coefficient and improvement of wear resistance. It is shown that increased wear resistance of these coatings was caused by their strain hardening resulted from localization of plastic strain. The optimal Zr fluence were determined that provide the maximum reduction of linear wear of the coatings

  20. Development and evolution of biaxial texture of rolled nickel tapes by ion beam bombardment for high Tc coated conductors

    International Nuclear Information System (INIS)

    Wang, S.S.; Wu, K.; Shi, K.; Liu, Q.; Han, Z.

    2004-01-01

    High quality YBa 2 Cu 3 O 7-x films on metallic substrates with high critical current densities well over 10 6 A/cm 2 can be prepared by the rolling assisted biaxially textured substrates (RABiTS) method. Nickel or its alloys have been used as biaxially textured substrates formed through a specific rolling and high temperature annealing procedures. In this paper, we report a newly developed process for developing biaxial texture in rolled Ni tape by argon ion beam bombardment. It is named the ion-beam structure modification (ISM) process. In the ISM processed Ni foils, X-ray diffraction ω scans showed the full width-half maximum (FWHM) value of the (2 0 0) peak was 5.7 deg. . And the electron back scattering diffraction (EBSP) analysis based on scanning electron microscopy showed good {1 0 0} cubic orientation and the mean grain size was determined as about 25 μm. The texture evolution of rolled Ni foils during ISM process is reported also. For ISM process, local temperature elevation and distribution arises from the ion bombardment, coupled with anisotropic incident ion penetration and propagation as a result of channeling effects in the metal lattice, are expected to play the major roles in the development of grain reorientation in the Ni foil. Due to the simplicity and efficiency of the ISM process, the technique shows a great promise for application in the industrial scale production of long-lengths of superconductor tapes

  1. Investigation of energy thresholds of atomic and cluster sputtering of some elements under ion bombardment

    CERN Document Server

    Atabaev, B G; Lifanova, L F

    2002-01-01

    Threshold energies of sputtering of negative cluster ions from the Si(111) surface were measured at bombardment by Cs sup + , Rb sup + , and Na sup + ions with energy of 0.1-3.0 keV. These results are compared with the calculations of the similar thresholds by Bohdansky etc. formulas (3) for clusters Si sub n sup - and Cu sub n sup - with n=(1-5) and also for B, C, Al, Si, Fe, Cu atoms. Threshold energies of sputtering for the above elements were also estimated using the data from (5). Satisfactory agreement between the experimental and theoretical results was obtained. (author)

  2. The crystalline-to-amorphous transition in ion-bombarded silicon

    International Nuclear Information System (INIS)

    Mueller, G.; Kalbitzer, S.

    1980-01-01

    Hydrogen-free, but defect-rich a-Si can be obtained by ion bombardment of c-Si. The formation of such material has been studied in detail using carrier-removal measurements in the characterization of the bombardment damage. In order to develop an overall view of the disordering process these data are discussed together with results obtained on similar films by Rutherford back-scattering, electron spin resonance, electron microscopy and optical measurements. It is concluded that amorphous material generally evolves from an intermediate crystalline phase supersaturated with point defects. The transition occurs locally at the sites of energetic ion impacts into critically predamaged crystalline material. As a consequence, an amorphous layer is built up from small clusters with dimensions typically of the order of 50 A. From the net expansion of the bombarded layers it is concluded that regions of lower atomic density are locally present, very likely a consequence of a structural mismatch between individual amorphous clusters. In this way a heterogeneous defect structure may build up in these films which determines their electronic properties. (author)

  3. A model for the build-up of disordered material in ion bombarded Si

    International Nuclear Information System (INIS)

    Nelson, R.S.

    1977-01-01

    A new model based on experimental observation is developed for the build-up of disordered material in ion bombarded silicon. The model assumes that disordered zones are created in a background of migrating point defects, these zones then act as neutral sinks for such defects which interact with the zones and cause recrystallization. A simple steady state rate theory is developed to describe the build-up of disordered material with ion dose as a function of temperature. In general the theory predicts two distinct behaviour patterns depending on the temperature and the ion mass, namely a linear build-up with dose to complete disorder for heavy bombarding ions and a build-up to saturation at a relatively low level for light ions such as protons. However, in some special circumstances a transition region is predicted where the build-up of disorder approximately follows a (dose)sup(1/2) relationship before reverting to a linear behaviour at high dose. (author)

  4. Ion bombardment induced topography evolution on low index crystal surfaces of Cu and Pb

    International Nuclear Information System (INIS)

    Tanovic, L.; Tanovic, N.; Carter, G.; Nobes, M.J.

    1993-01-01

    (100), (110) and (111) oriented single crystal surfaces of Cu and Pb have been bombarded with inert gas ions, self ions, ions of the other substrate species and Bi in the energy range 50-150 keV and in the fluence range 10 15 -10 18 ions.cm 2 . The evolving surface topography was observed by scanning electron microscopy. This topography was observed to be strongly influenced by ion species and surface orientation but the habit of the topography was delineated at low fluences and the features increased in size and density with increasing fluence with some mutation to the more stable of the features. As an example Bi and Pb bombardment of (100) Cu leads to little topographic evolution, (110) Cu develops a system of parallel ridges with (100) facets and (111) Cu develops a prismatic surface, each prism possessing (100) facets. These, and the more general, results cannot be explained by surface erosion by sputtering theory alone (this predicts surface stability of the lowest sputtering yield orientation (110), nor by surface free energy density minimisation criteria (this predicts stability of (111) surfaces). It is proposed that the observed topography is most strongly related to the crystallographic form of precipitates of implanted species. (orig.)

  5. High-energy particle emission from galena and pyrite bombarded with Cs and O ions

    International Nuclear Information System (INIS)

    Karpuzov, D.S.; McIntyre, N.S.

    2002-01-01

    The ejection of energetic particles during steady-state ion surface bombardment has been investigated by means of a dynamic computer simulation as well as in a secondary ion mass spectrometry (SIMS)/low-energy ion scattering from surfaces (LEIS) experiment. The emphasis of this comparative study is on the mass dependence of high-energy tails in sputtering and backscattering for the bombardment of galena (PbS) and pyrite (FeS 2 ) with keV energy ion beam of cesium and oxygen. In the experiment, kinetic energy distributions of sputtered secondary ions (S + , Fe + , Pb + , S - ), as well as backscattered or re-sputtered primary ions (Cs + , O + , O - ), have been measured on a modified Cameca IMS-3f magnetic sector mass spectrometer for keV cesium (Cs + ) and oxygen (O 2 + , O - ) bombardment of galena and pyrite. Ejection of high-energy particles, with emission energies of up to ∼40% or up to ∼60% of the bombarding energy for sputtering of the lighter component (S ± ) with cesium or oxygen, respectively, and of up to ∼40% (Cs + ) and ∼80% (O ± ) for backscattering, has been observed for PbS. The computer simulations were based on the well-known MARLOWE code. In order to model the change of the stoichiometry of the binary compounds, dynamic modification of the target composition in the near-surface region was introduced. Cs incorporation was included, and a relative enrichment of the metallic component (Pb, Fe) in the top few layers due to preferential sputtering of sulfur was allowed. The computer simulations provide information on the formation of altered layer under sputter equilibrium as well as on the energy and angular emission distributions of sputtered and backscattered particles in steady-state conditions. Multiple scattering of Cs projectiles and dynamic re-sputtering of cesium that was previously incorporated in the altered near-surface region can be distinguished in the simulation, and matched with the experimental observations. In addition

  6. Metallic vapor supplying by the electron bombardment for a metallic ion production with an ECR ion source

    Energy Technology Data Exchange (ETDEWEB)

    Kitagawa, Atsushi; Sasaki, Makoto; Muramatsu, Masayuki [National Inst. of Radiological Sciences, Chiba (Japan); Jincho, Kaoru; Sasaki, Noriyuki; Sakuma, Tetsuya; Takasugi, Wataru; Yamamoto, Mitsugu [Accelerator Engineering Corporation, Chiba (Japan)

    2001-11-19

    To produce the metallic ion beam for the injection into the Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences (NIRS), a new gas supply method has been developed for an 18 GHz ECR ion source (NIRS-HEC). A metallic target rod at a high positive potential is melted by the electron bombardment technique. The evaporated gas with a maximum flow rate of 50A/sec is supplied into the ECR plasma in case of Fe metal. (author)

  7. Metallic vapor supplying by the electron bombardment for a metallic ion production with an ECR ion source

    International Nuclear Information System (INIS)

    Kitagawa, Atsushi; Sasaki, Makoto; Muramatsu, Masayuki; Jincho, Kaoru; Sasaki, Noriyuki; Sakuma, Tetsuya; Takasugi, Wataru; Yamamoto, Mitsugu

    2001-01-01

    To produce the metallic ion beam for the injection into the Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences (NIRS), a new gas supply method has been developed for an 18 GHz ECR ion source (NIRS-HEC). A metallic target rod at a high positive potential is melted by the electron bombardment technique. The evaporated gas with a maximum flow rate of 50A/sec is supplied into the ECR plasma in case of Fe metal. (author)

  8. Properties of TiN coatings deposited by the method of condensation with ion bombardment accompanied by high-energy ion beam

    International Nuclear Information System (INIS)

    Obrezkov, O.I.; Vershok, B.A.; Dormashev, A.B.; Margulev, I.Ya.; Molchanova, S.A.; Andreev, E.S.; Dervuk, V.V.

    2002-01-01

    Vacuum-sputtering adapted commercial facility based coating of stainless steel with titanium nitride followed two procedures: ion bombardment condensation (IBC) and IBC under simultaneous effect of ion beam (IB). The deposition rate was equal to 0.1 μm min -1 ; the investigated coatings were characterized by 2.5 μm depth. Comparison analysis of features and characteristics of the specimens, as well as, full-scale tests of a coated cutting tool enabled to make conclusions about advantages of application of IB assisted IBC technology in contrast to the reference IBC technology [ru

  9. Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1987-01-01

    When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

  10. Topography development on selected inert gas and self-ion bombarded Si

    International Nuclear Information System (INIS)

    Vishnyakov, V.; Carter, G.; Goddard, D.T.; Nobes, M.J.

    1995-01-01

    An AFM and SEM study of the topography induced by 20 keV Si + , Ar + and Xe + ion bombardment of Si at 45 o incidence angles and for ion fluences between 10 17 and 10 20 cm -2 has been undertaken at room temperature. All species generate an atomic scale random roughness, the magnitude of which does not increase extensively with ion fluence, suggesting the operation of a local relaxation process. This nanometre scale roughness forms, for Ar and Xe, a background for coarser micrometre scale structures such as pits, chevrons and waves. Apart from isolated etch pits Si + irradiation generates no repetitive micrometre scale structures. Xe + irradiation produces well developed transverse waves while Ar + irradiation results in isolated chevron-like etch pit trains and ripple patches. This latter pattern evolves, with increasing ion fluence, to a corrugated facet structure. The reasons for the different behaviours are still not fully clarified. (author)

  11. Ion Back-Bombardment of GaAs Photocathodes Inside DC High Voltage Electron Guns

    CERN Document Server

    Grames, Joseph M; Brittian, Joshua; Charles, Daniel; Clark, Jim; Hansknecht, John; Lynn Stutzman, Marcy; Poelker, Matthew; Surles-Law, Kenneth E

    2005-01-01

    The primary limitation for sustained high quantum efficiency operation of GaAs photocathodes inside DC high voltage electron guns is ion back-bombardment of the photocathode. This process results from ionization of residual gas within the cathode/anode gap by the extracted electron beam, which is subsequently accelerated backwards to the photocathode. The damage mechanism is believed to be either destruction of the negative electron affinity condition at the surface of the photocathode or damage to the crystal structure by implantation of the bombarding ions. This work characterizes ion formation within the anode/cathode gap for gas species typical of UHV vacuum chambers (i.e., hydrogen, carbon monoxide and methane). Calculations and simulations are performed to determine the ion trajectories and stopping distance within the photocathode material. The results of the simulations are compared with test results obtained using a 100 keV DC high voltage GaAs photoemission gun and beamline at currents up to 10 mA D...

  12. On the modification of metal/ceramic interfaces by low energy ion/atom bombardment during film growth

    International Nuclear Information System (INIS)

    Rigsbee, J.M.; Scott, P.A.; Knipe, R.K.; Hock, V.F.

    1986-01-01

    Elemental Cu and Ti films have been deposited onto ceramic substrates with a plasma-aided physical vapor deposition (ion-plating) process. This paper discusses how the structure and chemistry of the metallic film and the metal/ceramic interface are modified by low energy ion and neutral atom bombardment. Emphasis is placed on determining how low energy ion/neutral atom bombardment affects the strength of the metal/ceramic interface. Analyses of the film, interface and substrate regions have employed scanning Auger microprobe, secondary ion mass spectroscopy, SEM/STEM-energy dispersive X-ray and TEM/STEM imaging and microdiffraction techniques. (Auth.)

  13. Surface Morphologies of Ti and Ti-Al-V Bombarded by 1.0-MeV Au+ Ions

    Science.gov (United States)

    Garcia, M. A.; Rickards, J.; Cuerno, R.; Trejo-Luna, R.; Cañetas-Ortega, J.; de la Vega, L. R.; Rodríguez-Fernández, L.

    2017-12-01

    Ion implantation is known to enhance the mechanical properties of biomaterials such as, e.g., the wear resistance of orthopedic joints. Increasing the surface area of implants may likewise improve their integration with, e.g., bone tissue, which requires surface features with sizes in the micron range. Ion implantation of biocompatible metals has recently been demonstrated to induce surface ripples with wavelengths of a few microns. However, the physical mechanisms controlling the formation and characteristics of these patterns are yet to be understood. We bombard Ti and Ti-6Al-4V surfaces with 1.0-MeV Au+ ions. Analysis by scanning electron and atomic force microscopies shows the formation of surface ripples with typical dimensions in the micron range, with potential indeed for biomedical applications. Under the present specific experimental conditions, the ripple properties are seen to strongly depend on the fluence of the implanted ions while being weakly dependent on the target material. Moreover, by examining experiments performed for incidence angle values θ =8 ° , 23°, 49°, and 67°, we confirm the existence of a threshold incidence angle for (ripple) pattern formation. Surface indentation is also used to study surface features under additional values of θ , agreeing with our single-angle experiments. All properties of the surface structuring process are very similar to those found in the production of surface nanopatterns under low-energy ion bombardment of semiconductor targets, in which the stopping power is dominated by nuclear contributions, as in our experiments. We consider a continuum model that combines the effects of various physical processes as originally developed in that context, with parameters that we estimate under a binary-collision approximation. Notably, reasonable agreement with our experimental observations is achieved, even under our high-energy conditions. Accordingly, in our system, ripple formation is determined by mass

  14. Absorption of hydrogen in vanadium, enhanced by ion bombardment; Ionenbeschussunterstuetzte Absorption des Wasserstoffs in Vanadium

    Energy Technology Data Exchange (ETDEWEB)

    Paulus, H.; Lammers, M. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany); Mueller, K.H. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany)]|[Paderborn Univ. (Gesamthochschule), Soest (Germany). Fachbereich 16 - Elektrische Energietechnik; Kiss, G.; Kemeny, Z. [Technical Univ. Budapest (Hungary)

    1998-12-31

    Prior to hydrogen implantation into vanadium, the vanadium specimen usually is exposed to an activation process and is then heated at 1 atm hydrogen to temperatures between 500 and 600 C, subsequently cooled down in several steps. Within this temperature range, hydrogen solubility increases with declining temperature. A decisive factor determining hydrogen absorption is the fact that at temperatures above 250 C, oxygen desorbs from the material surface and thus no longer inhibits hydrogen absorption. Therefore a different approach was chosen for the experiments reported: Hydrogen absorption under UHV conditions at room temperature. After the usual activation process, the vanadium surface was cleaned by 5 keV Ar{sup +} ion bombardment. Thus oxygen absorption at the specimen surface (and new reactions with oxygen from the remaining gas) could be avoided, or removed. By means of thermal desorption mass spectrometry (TDMS), hydrogen absorption as a function of argon ion dose was analysed. TDMS measurements performed for specimens treated by ion bombardment prior to H{sup 2} exposure showed two H{sup 2} desorption peaks, in contrast to the profiles measured with specimens not exposed to ion bombardment. It is assumed that the ion bombardment disturbs the crystal structure so that further sites for hydrogen absorption are produced. (orig./CB) [Deutsch] Bei der Beladung von Vandium mit Wasserstoff wird ueblicherweise die Probe nach einer Aktivierungsprozedur bei 1 atm Wasserstoff auf Temperaturen im Bereich von 500 bis 600 C hochgeheizt und danach schrittweise abgekuehlt. In diesem Temperaturbereich nimmt die Wasserstoffloeslichkeit mit abnehmender Temperatur zu. Entscheidend fuer die Beladung ist aber auch die Tatsache, dass bei Temperaturen groesser 250 C Sauerstoff von der Oberflaeche desorbiert und dadurch die Absorption von Wasserstoff nicht mehr blockieren kann. Im Rahmen der hier beschriebenen Untersuchungen sollte die Wasserstoffbeladung unter UHV-Bedingungen bei

  15. Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

    International Nuclear Information System (INIS)

    Tuleta, M.; Gabla, L.; Szkarlat, A.

    2005-01-01

    The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

  16. Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

    Energy Technology Data Exchange (ETDEWEB)

    Tuleta, M.; Gabla, L. [Jagiellonian Univ., Institute of Physics, Cracow (Poland); Szkarlat, A. [Clinical Children' s Hospital of the Jagiellonian Univ., Medical College, Lab. of Microbiology, Cracow (Poland)

    2005-04-01

    The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

  17. A liquid-like model for the morphology evolution of ion bombarded thin films

    Energy Technology Data Exchange (ETDEWEB)

    Repetto, L., E-mail: luca.repetto@unige.it [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Lo Savio, R. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Angeli, E.; Valbusa, U. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2015-07-01

    Thin solid films exposed to ion irradiation exhibit a peculiar evolution that can differ substantially from what is observed for bulk samples. The phenomenology of the patterns that self-organize on the substrate is very rich, with morphologies that display several degrees of order upon the modification of initial film characteristics and irradiation parameters. This richness paves the way for the fabrication of novel functional surfaces, but it is also an indication of the complexity of the underlying driving mechanisms. A remarkable simplification for the comprehension of these phenomena can come from the noteworthy similarity of the obtained patterns with those showing up when liquids dewet from their substrates. Here, we analyze the possibility to apply a liquid-like model to explain the morphology evolution of ion bombarded thin films for the whole phenomenology showing up in experiments. In establishing this connection between liquids and ion bombarded thin films, we propose to use also for liquids the insight gained for our system with recent experiments that stress the importance of the substrate topography for the selection of the dewetting mechanism. If confirmed, this result would lead to a reconsideration of the importance of capillary waves in spinodal dewetting, and will help to understand the low reproducibility of the related experimental results.

  18. Conical surface textures formed by ion bombarding 2% Be-Cu alloy

    International Nuclear Information System (INIS)

    Panitz, J.K.G.

    1991-01-01

    A homogeneous, micrometer-sized conical surface texture forms on 2% Be-Cu alloy which is bombarded with an argon beam produced by a Kaufman ion source. The dimensions of the features that form depend strongly on argon energy (from 250 to 1500 eV); argon fluence (10 19 to 10 20 ions cm -2 ); and argon flux (0.1 to 1 mA cm -2 ). The texture morphology depends less strongly on the background ambient (Mo versus graphite), earlier alloy heat treatments and the temperature during bombardment (100 o C and 450 o C). As the texture matures with increasing fluence, the number of large features increases at the expense of the number of small features. The observed relationship between texture formation and ion flux suggests that the evolution of these features is not adequately described by theories predicting that the mature conical side-wall angle is related to the angle of the maximum sputtering yield. These textured surfaces can be coated with other metals for a variety of possible applications including pulsed power Li + beam anodes; cold cathode field emission devices; optical absorbers and catalysis supports. (author)

  19. Conical surface textures formed by ion bombarding 2% Be Cu alloy

    International Nuclear Information System (INIS)

    Panitz, J.K.G.

    1990-01-01

    A homogeneous, micrometer-sized conical surface texture forms on 2% Be-Cu alloy which is bombarded with an argon beam produced by a Kaufman ion source. The dimensions of the features that form strongly depend on: (1) argon energy (from 250 to 1500 eV), (2) fluence (10 19 to 10 20 ions/cm 2 ), and (3) flux (0.1 to 1 mA/cm 2 ). The texture morphology depends less strongly on the background ambient (Mo vs graphite), earlier alloy heat treatments and the temperature during bombardment (100 degree C and 450 degree C). As the texture matures with increasing fluence, the number of large features increases at the expense of the number of small features. The observed relationship between texture formation and ion flux suggests that the evolution of these features is not adequately described by theories predicting that the mature conical sidewall angle is related to the angle of the maximum sputtering yield. These textured surfaces can be coated with other metals for a variety of possible applications including: (1) pulsed power Li+ beam anodes, (2) cold cathode field emission devices, (3) optical absorbers and (4) catalysis supports. 18 refs., 5 figs

  20. Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

    International Nuclear Information System (INIS)

    Jung, Hae-Suk; Park, Hyung-Ho; Mendieta, I.R.; Smith, D.A.

    2003-01-01

    We report an effective method of increasing the sp 3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation. In the deposition of an a-C film, Ar ion bombardment by controlling the applied bias voltage plays a role in creating high stress in film and causes the local bonding configuration to change to a sp 3 hybridized bond. Simultaneously, the incorporated Si in an a-C network breaks the sp 2 hybridized bonded ring and promotes the formation of a sp 3 hybridized bond. This enhancement of the sp 3 hybridized bonding characteristic is maximized for an a-C film with 23 at. % of Si and 100-150 V of applied bias voltage. In this region, the increase of resistivity, optical band gap, and mechanical hardness of a-C is attributed to the reduction of the sp 2 hybridized bonded ring and increased fraction of the sp 3 hybridized bond. However, at a higher bias voltage above 150 V, the enhancement effect is reduced due to the resputtering and thermally activated reconversion of a sp 3 to a sp 2 hybridized bond

  1. Study and realisation of an ion source obtained by electronic bombardment - experimentation with phosphorus

    International Nuclear Information System (INIS)

    Schneider, Philippe

    1979-01-01

    This research thesis reports the study and development of an ion source by electronic bombardment. In order to solve some practical difficulties (cathode destruction, source instability, and so on), the design of each component has been very careful, notably for the electron gun. The author first briefly discusses the exiting ionisation processes, gives a list of ion which can be produced, with a focus on phosphorus for which the ionisation cross section is defined and assessed. After an assessment of different ionisation processes, and an indication of performance of the best existing sources, the author explains the choice for a totally different process. In the second part, he describes the experimental device, and particularly the electron gun as its design has been an important part of this research work. The source operation is described and its characteristics and performance are studied. Finally, the author outlines that some improvements are still possible to obtain a totally exploitable source [fr

  2. Erosion of volatile elemental condensed gases by keV electron and light-ion bombardment

    International Nuclear Information System (INIS)

    Schou, J.

    1991-11-01

    Erosion of the most volatile elemental gases by keV electron and light-ion bombardment has been studied at the experimental setup at Risoe. The present work includes frozen neon, argon, krypton, nitrogen, oxygen and three hydrogen isotopes, deuterium, hydrogen deuteride and hydrogen. The yield of these condensed gases has been measured as a function of film thickness and primary energy for almost all combinations of primary particles (1-3 keV electrons, 5-10 keV hydrogen- and helium ions) and ices. These and other existing results show that there are substantial common features for the sputtering of frozen elemental gases. Within the two groups, the solid rare gases and the solid molecular gases, the similarity is striking. The hydrogenic solids deviate in some respects from the other elements. The processes that liberate kinetic energy for the particle ejection in sputtering are characteristic of the specific gas. (au) 3 tabs., 12 ills., 159 refs

  3. Influence of helium-ion bombardment on the surface properties of pure and ammonia-adsorbed water thin films

    International Nuclear Information System (INIS)

    Kondo, M.; Shibata, T.; Kawanowa, H.; Gotoh, Y.; Souda, R.

    2005-01-01

    The influence of the ion bombardment on the surface properties of water-ice films has been investigated. The films are irradiated with 1.5 keV He + ions and analyzed sequentially on the basis of time-of-flight secondary-ion mass spectrometry (TOF-SIMS). In order to minimize any temperature-induced effects, the measurements were made at 15 K. The damage of the films, as estimated from the H/D exchange between NH 3 and the D 2 O ice and the intermixing of NH 3 with the H 2 18 O ice, is recognized at the fluence above 2 x 10 14 ions/cm 2 . The sputtering yield of the D 2 O ice is determined as 0.9 ± 0.2 molecules per incoming He + ion. The temperature-programmed TOF-SIMS analysis of the water-ice films has been completed within the fluence of 5.8 x 10 12 ions/cm 2 , so that no appreciable damage of the film should be induced during the measurement

  4. An ion accelerator facility for the preparation of nuclear bombardement targets

    International Nuclear Information System (INIS)

    Grime, G.W.; Takacs, J.

    1981-01-01

    As a result of the demand for increasingly complex nuclear bombardment targets in this laboratory, work has started on the construction of a medium-energy accelerator facility capable of preparing targets both by ion implantation and by heavy-ion sputtering. Basic consideration was given in the design to flexibility and simplicity. The ion source chosen was the Harwell sputter ion gun which is capable of producing ions of practically any element at currents up to several hundred μA. This was modified to suit our specific requirement. The acceleration system was constructed to operate at a maximum of 100 kV, and the beam is focussed by a three-cylinder electrostatic lens. The ions are analysed by 50 0 magnet which is capable of a mass dispersion of 7 mm in the target chamber between adjacent mass numbers at mass 100. A slit feedback system is used to stabilise the energy against short-term fluctuations. The system is fitted with two target chambers; one after the magnet and one after the electrostatic lens. The latter is used for applications such as sputtering. Two dimensional scanning is available in both target chambers for ensuring uniformity of implantation over areas larger than the spot size. Using this apparatus, implanted targets of 3 He and 20 Ne have been prepared. In addition high quality films of refractory metals have been sputtered using Ar or Xe beams. (orig.)

  5. Recovery of 201Tl by ion exchange chromatography from proton bombarded thallium cyclotron targets

    International Nuclear Information System (INIS)

    Walt, T.N. van der; Naidoo, C.

    2000-01-01

    A method based on ion exchange chromatography is presented for the recovery of 201 Tl and its precursor 201 Pb from proton bombarded natural thallium cyclotron targets. After bombardment the target is dissolved in diluted nitric acid. Water, hydrazine and ammonium acetate are added to the solution and the lead radioisotopes separated from the thallium by cation exchange chromatography on a Bio-Rex 70 column. The sorbed lead radioisotopes are eluted with dilute nitric acid and the separation repeated on a second Bio-Rex 70 column. After elution of the remaining thallium the column is left for 32 hours and the 201 Tl formed by decay of 201 Pb is eluted with an ammonium acetate solution. The 201 Tl eluate is acidified with a HNO 3 -HBr-Br 2 mixture and the resulting solution is passed through an AG MP-1 anion exchanger column to remove any remaining lead isotopes. The 201 Tl is eluted with a hydrazine solution, the eluate evaporated to dryness and the 201 Tl finally dissolved in an appropriate solution to produce a 201 TlCl solution suitable for medical use. A high quality 201 Tl product is obtained containing ≤ 0.1 μg of Tl/mCi (37 MBq) 201 Tl. The radionuclidic impurities are less than the maximum values specified by the US Pharmacopoeia and the British Pharmacopoeia. (orig.)

  6. The development of cones and associated features on ion bombarded copper

    International Nuclear Information System (INIS)

    Whitton, J.L.; Carter, G.; Nobes, M.J.; Williams, J.S.

    1977-01-01

    Observations of ion-bombardment-induced surface modifications on crystalline copper substrates have been made using scanning electron microscopy. The delineation and development of grain boundary edges, faceted and terraced etch pits and small-scale ripple structure, together with the formation of faceted conical features, have all been observed on low and high purity polycrystalline substrates. In general, the density of such surface morphological features, although variable from grain to grain, is higher in the proximity of grain boundaries. In particular, cones are only found within regions where other surface erosional features are present and it would appear that the development of these other features is a pre-requisite to cone generation in high-purity crystalline substrates. We suggest the operation of a defect-induced mechanism of cone formation whereby sputter elaboration of bulk defects (either pre-existing or bombardment-induced) leads to the formation and development of surface features which, in turn, may intersect and result in the generation of cones. (author)

  7. The development of cones and associated features on ion bombarded copper

    International Nuclear Information System (INIS)

    Whitton, J.L.; Williams, J.S.

    1977-01-01

    Observations of ion-bombardment-induced surface modifications on crystalline copper substrates have been made using scanning electron microscopy. The delineation and development of grain boundary edges, faceted and terraced etch pits and small-scale ripple structure, together with the formation of faceted conical features have all been observed on low and high purity polycrystalline substrates. In general, the density of such surface morphological features, although variable from grain to grain, is higher in the proximity of grain boundaries. In particular, cones are only found within regions where other surface erosional features are present and it would appear that the development of these other surface features is a pre-requisite to cone generation in high-purity crystalline substrates. The authors suggest the operation of a defect-induced mechanism of cone formation whereby sputter elaboration of bulk defects (either preexisting or bombardment-induced) leads to the formation and development of surface features which, in turn, may intersect and result in the generation of cones. (Auth.)

  8. Photon emission produced by Kr+ ions bombardment of Cr and Cr2O3 targets

    International Nuclear Information System (INIS)

    Boujlaidi, A. El; Hammoum, K.; Jadoual, L.; Jourdani, R.; Ait El Fqih, M.; Aouchiche, H.; Kaddouri, A.

    2015-01-01

    The sputter induced photon spectroscopy technique was used to study the luminescence spectra of the species sputtered from chromium powder and its oxide Cr 2 O 3 , during 5 keV Kr + ions bombardment in vacuum better than 10 −7 torr. The optical spectra recorded between 350 and 470 nm exhibit discrete lines which are attributed to neutral excited atoms of chromium (Cr I lines). The experiments are also performed under 10 −5 torr ultra pure oxygen partial pressure. The results demonstrate that the measured intensities of the emitted photons are always higher in the presence of oxygen and even higher than those obtained for Cr 2 O 3 target. In the presence of oxygen vapor we assume that an oxide film is formed on the chromium surface which is responsible of the increase of photon emission. This variation in the intensities is correctly explained in the model of electron transfer processes between the excited sputtered atom and the bombarded surface. This model suggests that the structure formed on the Cr surface in the case of oxygenated chromium is closer to that of Cr 2 O 3 oxide

  9. Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

    1993-09-01

    The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

  10. Surface damage studies of ETFE polymer bombarded with low energy Si ions (≤100 keV)

    International Nuclear Information System (INIS)

    Minamisawa, Renato Amaral; Almeida, Adelaide De; Budak, Satilmis; Abidzina, Volha; Ila, Daryush

    2007-01-01

    Surface studies of ethylenetetrafluoroethylene (ETFE), bombarded with Si in a high-energy tandem Pelletron accelerator, have recently been reported. Si ion bombardment with a few MeV to a few hundred keV energies was shown to be sufficient to produce damage on ETFE film. We report here the use of a low energy implanter with Si ion energies lower than 100 keV, to induce changes on ETFE films. In order to determine the radiation damage, ETFE bombarded films were simulated with SRIM software and analyzed with optical absorption photometry (OAP), Raman and Fourier transform infrared-attenuated total reflectance (FTIR-ATR) spectroscopy to show quantitatively the physical and chemical property changes. Carbonization occurs following higher dose implantation, and hydroperoxides were formed following dehydroflorination of the polymer

  11. AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

    Directory of Open Access Journals (Sweden)

    Abidri B.

    2012-06-01

    Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  12. The influence of ion energy, target temperature, dose rate and crystal order on the shape of bombardment induced pyramids on copper crystals

    International Nuclear Information System (INIS)

    Tanovic, L.; Whitton, J.L.; Kofod, S.

    1978-01-01

    Following recent studies of energetic ion bombardment of copper, which established the conditions necessary for the production of cones/pyramids, investigations have been extended to include the effects of change in ion energy, target temperature and dose rate. In addition, the authors have attempted a detailed analysis of the influence of sample crystal orientation on the final form of pyramids and have investigated the stability of the pyramids as a function of the total dose. These experiments, as in earlier work, have been done using very pure copper, mass-analyzed ion beams and free of any metal contamination from, for example, defining apertures. (Auth.)

  13. Dependence of ion - photon emission characteristics on the concentration of implanted atoms of the bombarding beam

    International Nuclear Information System (INIS)

    Belykh, S.F.; Evtukhov, R.N.; Redina, I.V.; Ferleger, V.Kh.

    1989-01-01

    Results of experiment, where Dy + beams, its spraying products emitting intensively optical radiation with continuous spectrum (CSR), are used for tantalum surface bombardment, are presented. The given experiment allowed one to separate the scattered particle CSR contribution and was conducted under controlled beam n atom concentration on the target surface. E 0 energy and j 0 dysprosium ion flux density made up respectively 3.5 keV and 3x10 5 Axcm -2 . The obtained result analysis has shown that a notable dependence of spectrum type on n value is detected. Dy scattered atoms to not emit CSR. The main contribution to CSR is made by sprayed particles, containing dysprosium atoms

  14. Damage structure in Nimonic PE16 alloy ion bombarded to high doses and gas levels

    International Nuclear Information System (INIS)

    Farrell, K.; Packan, N.H.

    1981-01-01

    The Nimonic PE16 alloy in solution-treated-and-aged condition was bombarded simultaneously with nickel ions and α and deuteron beams at 625 0 C to doses of 80 to 313 dpa at He/dpa = 10 and D/dpa = 25. Microstructural changes consisted of the introduction of dislocations and of cavities, and the redistribuion of γ' precipitates to these defects. Cavitational swelling remained below 1%. Cavities were represented by several distinct size classes, the smaller ones believed to be gas bubbles, and some larger ones associated with preferred growth of precipitate. Formation of bubbles at grain boundaries, and large cavities at incoherent twins intensified the possibility of mechanical separation of interfaces under high-gas irradiation conditions

  15. Study of clean and ion bombardment damaged silver single crystal surfaces by work function measurements

    International Nuclear Information System (INIS)

    Chelvayohan, N.

    1982-06-01

    Work function values of the (110), (100) and (111) faces of silver single crystal were measured by the photoelectric emission method and found to be 4.14 +- 0.04 eV, 4.22 +-0.04 eV and 4.46 +- 0.02 eV respectively. Oxygen adsorption on the faces were studied by surface potential measurement. Strong oxygen adsorption was observed on (110) and (100) faces, whereas the (111) face was found to be inert for oxygen adsorption. Oxygen adsorption on the (111) face damaged by argon ion bombardment was also investigated. The above results were compared with those of early reported work function and oxygen adsorption values. (U.K.)

  16. Silicon nanodot formation and self-ordering under bombardment with heavy Bi3 ions

    International Nuclear Information System (INIS)

    Boettger, Roman; Heinig, Karl-Heinz; Bischoff, Lothar; Liedke, Bartosz; Huebner, Rene; Pilz, Wolfgang

    2013-01-01

    Si nanodots of high density and hexagonal short-range order are observed upon normal-incidence bombardment of hot, crystalline Si with Bi 3 + ions having a kinetic energy of a few tens of keV. The heights of nanodots are comparable to their widths of ∝20 nm. The implanted Bi accumulates in tiny Bi nanocrystals in a thin Si top layer which is amorphous due to implantation damage. Light and heavy ions up to Xe cause smoothing of surfaces, but Bi 3 + ions considered here have a much higher mass. Atomistic simulations prove that each Bi 3 + impact deposits an extremely high energy density resulting in a several nanometer large melt pool, which resolidifies within a few hundreds of picoseconds. Experiments confirm that dot patterns form only if the deposited energy density exceeds the threshold for melting. Comparing monatomic and polyatomic Bi ion irradiation, Bi-Si phase separation and preferential ion erosion are ruled out as driving forces of pattern formation. A model based on capillary forces in the melt pool explains the pattern formation consistently. High-density Si nanodots are formed by polyatomic Bi ion irradiation of hot Si surfaces. Each impact causes local transient melt pools smaller than the dots. Hexagonally ordered patterns evolve by self-organization driven by repeated ion-induced melting of tiny volumes. Homogeneously distributed Bi nanocrystals are found in the a-Si film. These nanocrystals are related to particularities of the Si-Bi phase diagram. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

    International Nuclear Information System (INIS)

    Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

    1982-11-01

    Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

  18. Experimental study on the secondary emission (atomic and molecular ions, aggregates, electrons) induced by the bombardment of surfaces by means of energetic heavy ions (∼ MeV/u). Effects of the charge state of the projectiles

    International Nuclear Information System (INIS)

    Monart, B.

    1988-05-01

    The ionic and electronic emissions, induced by the sputtering of solid targets (organic and inorganic) with 1 MeV/u projectiles. The time-of-flight spectrometry is applied to the secondary emission analysis. The projectile velocity, the angle of attack (between the beam and the target), and the projectile's incident charge state, are taken into account. It is shown that the secondary emission depends on the charge of the incident ion and on the charge state changement in the material's bulk. A model, applying the theoretical calculations concerning the charge in the material's bulk, is proposed. The existence of an interaction depth, for the incident ion and the material, which depends on the secondary ions type and on the incident ion charge, is suggested. The calculated depth is about 200 angstroms for the aggregates ejected from a CsI target, sputtered with 14 Kr 18+ . The H + yield (coming from ∼ 10 angstroms) is used as a projectile charge probe, at the material surface. The experimental method allows, for the first time, the obtention of the equilibrium charge state in the condensed matter. The same method is applied to determine the non-equilibrium charges in the bulk of thin materials. The results show that, after leaving the material, the projectile presents a post-ionization state [fr

  19. Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

    Energy Technology Data Exchange (ETDEWEB)

    Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Thopan, P.; Yaopromsiri, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation.

  20. Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

    International Nuclear Information System (INIS)

    Thongkumkoon, P.; Prakrajang, K.; Thopan, P.; Yaopromsiri, C.; Suwannakachorn, D.; Yu, L.D.

    2013-01-01

    Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation

  1. Modeling of metal nanocluster growth on patterned substrates and surface pattern formation under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Numazawa, Satoshi

    2012-11-01

    This work addresses the metal nanocluster growth process on prepatterned substrates, the development of atomistic simulation method with respect to an acceleration of the atomistic transition states, and the continuum model of the ion-beam inducing semiconductor surface pattern formation mechanism. Experimentally, highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO{sub 2} surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible and well-separated. The first topic is the investigation of this growth process with a continuum theoretical approach to the surface gas condensation as well as an atomistic cluster growth model. The atomistic simulation model is a lattice-based kinetic Monte-Carlo (KMC) method using a combination of a simplified inter-atomic potential and experimental transition barriers taken from the literature. An effective transition event classification method is introduced which allows a boost factor of several thousand compared to a traditional KMC approach, thus allowing experimental time scales to be modeled. The simulation predicts a low sticking probability for the arriving atoms, millisecond order lifetimes for single Ag monomers and {approx}1 nm square surface migration ranges of Ag monomers. The simulations give excellent reproduction of the experimentally observed nanocluster growth patterns. The second topic specifies the acceleration scheme utilized in the metallic cluster growth model. Concerning the atomistic movements, a classical harmonic transition state theory is considered and applied in discrete lattice cells with hierarchical transition levels. The model results in an effective reduction of KMC simulation steps by utilizing a classification scheme of transition levels for thermally activated atomistic diffusion processes. Thermally activated atomistic movements

  2. Modeling of metal nanocluster growth on patterned substrates and surface pattern formation under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Numazawa, Satoshi

    2012-11-01

    This work addresses the metal nanocluster growth process on prepatterned substrates, the development of atomistic simulation method with respect to an acceleration of the atomistic transition states, and the continuum model of the ion-beam inducing semiconductor surface pattern formation mechanism. Experimentally, highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO{sub 2} surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible and well-separated. The first topic is the investigation of this growth process with a continuum theoretical approach to the surface gas condensation as well as an atomistic cluster growth model. The atomistic simulation model is a lattice-based kinetic Monte-Carlo (KMC) method using a combination of a simplified inter-atomic potential and experimental transition barriers taken from the literature. An effective transition event classification method is introduced which allows a boost factor of several thousand compared to a traditional KMC approach, thus allowing experimental time scales to be modeled. The simulation predicts a low sticking probability for the arriving atoms, millisecond order lifetimes for single Ag monomers and {approx}1 nm square surface migration ranges of Ag monomers. The simulations give excellent reproduction of the experimentally observed nanocluster growth patterns. The second topic specifies the acceleration scheme utilized in the metallic cluster growth model. Concerning the atomistic movements, a classical harmonic transition state theory is considered and applied in discrete lattice cells with hierarchical transition levels. The model results in an effective reduction of KMC simulation steps by utilizing a classification scheme of transition levels for thermally activated atomistic diffusion processes. Thermally activated atomistic movements

  3. Diamond-like carbon prepared by pulsed laser deposition with ion bombardment: physical properties

    Science.gov (United States)

    Písařík, P.; Mikšovský, J.; Remsa, J.; Zemek, J.; Tolde, Z.; Jelínek, M.

    2018-01-01

    Diamond-like carbon (DLC) and titanium-doped DLC thin films were prepared by unique hybrid system consisting of pulsed laser deposition, ion source (bombardment) and magnetron sputtering. The influence of deposition parameters (ion energies, deposition pressures and magnetron power) on composition and physical properties was studied. Composition and sp 3/ sp 2 ratio were determined by XPS. sp 3/ sp 2 ratio was in the range from 1.4 to 2.2 for undoped DLC and from 3.4 to 4.8 for Ti-DLC. AFM showed that the layers were smooth, but with small amounts of random droplets. The measurements of the contact angle and determination of surface free energy were made for water, diiodomethane and ethylene glycol. Hardness and reduced Young's modulus varied from 20 to 31 GPa and from 182 to 276 GPa, respectively. Film adhesion was determined by scratch test; L C3 reached 23 N for DLC and 27 N for TiDLC. Optimization of sp 3/ sp 2 ratio, hardness and adhesion to biomedical alloys will advance the DLC coatings usability in the field of implantology.

  4. L-subshell ionization studies of Au for α-particle and lithium-ion bombardment

    International Nuclear Information System (INIS)

    Dhal, B.B.; Nandi, T.; Padhi, H.C.; Trautmann, D.

    1995-01-01

    L-subshell ionization of Au has been investigated for α-particle and lithium-ion bombardments with energies 0.54-1.74 MeV u -1 and 0.65-1.44 MeV u -1 , respectively. Comparison of experimental x-ray production cross sections with the predictions of the ECPSSR and SCA theories shows reasonably good agreement for L α and L β x-rays, whereas for L γ and L γ1+5 the ECPSSR theory underestimates the cross sections by about 60% for both α-particle and lithium-ion impact, and the SCA theory agrees reasonably well. The ECPSSR theory underestimates the L 1 - and L 2 -subshell ionization cross sections and gives good agreement for the L 3 -subshell, whereas the SCA theory overestimates the L 3 -subshell ionization cross sections and gives good agreement for L 1 and L 2 . The experimental data for the total-ionization cross sections are within 25% of the predictions of both the theories. (Author)

  5. Ion-beam bombardment induced texture in nickel substrates for coated high-Tc superconductors

    International Nuclear Information System (INIS)

    Wang, S S; Wu, K; Zhou, Y; Godfrey, A; Meng, J; Liu, M L; Liu, Q; Liu, W; Han, Z

    2003-01-01

    Biaxially textured metal substrates are often used for making YBa 2 Cu 3 O 7-x coated conductors with high critical current density. Generally, specific rolling and high-temperature annealing procedures are required to obtain the biaxial texture for metal substrates. Here, we report on a new method for developing strongly biaxially textured grain structure in rolled nickel tape by argon ion-beam bombardment. X-ray diffraction (XRD) θ-2θ scans have shown that a (200) diffraction peak intensity of the Ni foil processed by ion-beam structure modification (ISM) is two orders of magnitude greater than that of cold-rolled foil, while the (111) and (220) intensities are very weak. In the ISM processed Ni foils, from the rocking curve, the full width at half maximum (FWHM) value of the (200) peak has been found to be less than 5.9 deg., whilst the in-plane FWHM obtained from a pole figure analysis is just 8 deg. We discuss the possible mechanisms leading to the texture changes during ISM. (rapid communication)

  6. Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide

    International Nuclear Information System (INIS)

    Liu Fang; Li, Carolina H.; Pisano, Albert P.; Carraro, Carlo; Maboudian, Roya

    2010-01-01

    Low-energy Ar + ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.

  7. Systematic analysis of neutron yields from thick targets bombarded by heavy ions and protons with moving source model

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Takashi; Kurosawa, Tadahiro; Nakamura, Takashi E-mail: nakamura@cyric.tohoku.ac.jp

    2002-03-21

    A simple phenomenological analysis using the moving source model has been performed on the neutron energy spectra produced by bombarding thick targets with high energy heavy ions which have been systematically measured at the Heavy-Ion Medical Accelerator (HIMAC) facility (located in Chiba, Japan) of the National Institute of Radiological Sciences (NIRS). For the bombardment of both heavy ions and protons in the energy region of 100-500 MeV per nucleon, the moving source model incorporating the knock-on process could be generally successful in reproducing the measured neutron spectra within a factor of two margin of accuracy. This phenomenological analytical equation is expressed having several parameters as functions of atomic number Z{sub p}, mass number A{sub p}, energy per nucleon E{sub p} for projectile, and atomic number Z{sub T}, mass number A{sub T} for target. By inputting these basic data for projectile and target into this equation we can easily estimate the secondary neutron energy spectra at an emission angle of 0-90 deg. for bombardment with heavy ions and protons in the aforementioned energy region. This method will be quite useful to estimate the neutron source term in the neutron shielding design of high energy proton and heavy ion accelerators.

  8. Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures

    International Nuclear Information System (INIS)

    Anderson, K.K.; Donnelly, J.P.; Wang, C.A.; Woodhouse, J.D.; Haus, H.A.

    1988-01-01

    A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-μm-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne + ions for 1 h with the sample at 700 0 C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer

  9. Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, E.; Kotai, E. [Magyar Tudomanyos Akademia, Budapest (HU). Research Inst. for Particle and Nuclear Physics (RIPNP); Khanh, N.Q.; Horvath, Z.E.; Lohner, T.; Battistig, G.; Zolnai, Z.; Gyulai, J. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary)

    2001-07-01

    Damage created by implantation of Al{sup +} ions into 4H-SiC is characterized using backscattering spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV {sup 12}C({alpha},{alpha}){sup 12}C resonance. To create disorder, Al{sup +} ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC. (orig.)

  10. Diamond-like carbon layers modified by ion bombardment during growth and researched by Resonant Ultrasound Spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Kocourek, Tomáš; Jelínek, Miroslav; Písařík, Petr; Remsa, Jan; Janovská, Michaela; Landa, Michal; Zemek, Josef; Havránek, Vladimír

    2017-01-01

    Roč. 417, Sep (2017), s. 213-217 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GA15-05864S Institutional support: RVO:68378271 ; RVO:61388998 ; RVO:61389005 Keywords : in-situ ion bombardment * pulsed laser deposition * diamond-like carbon * hybrid technology * flm modification Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 3.387, year: 2016

  11. Anomalous time-of-flight distributions observed for argon implanted in silicon and resputtered by Ar+-ion bombardment

    International Nuclear Information System (INIS)

    van Veen, G.N.A.; Sanders, F.H.M.; Dieleman, J.; van Veen, A.; Oostra, D.J.; de Vries, A.E.

    1986-01-01

    A Si substrate is bombarded by 3-keV Ar + ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open during etching. The average kinetic energy of the Ar atoms is in agreement with the calculated average potential energy of the Ar atoms inside the bubbles

  12. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

    International Nuclear Information System (INIS)

    Stevie, F.A.; Kahora, P.M.; Simons, D.S.; Chi, P.

    1988-01-01

    Changes in secondary ion yields of matrix and dopant species have been correlated with changes in surface topography during O + 2 bombardment of Si and GaAs. In Si, profiles were measured in (100) wafers at 6- and 8-keV impact energy. At 6 keV, a yield increase of about 70% occurred for Si + over a depth range of 2.5 to 3.5 μm, with changes in other species ranging from a decrease of ∼20% for Si + 3 to an increase of more than 25% for O + . The development of a rippled surface topography was observed in scanning electron micrographs over the same depth range. Similar effects occurred over a 3--5 μm depth range for 8-keV ions, and in (111) silicon at a depth of 3 to 4 μm for 6-keV ions. No differences were noted between p- and n-type silicon, or implanted and unimplanted silicon. In GaAs, profiles were measured in (100) wafers at 2.5-, 5.5-, and 8-keV impact energies. At 8 keV, a yield increase of about 70% was found for GaO + in the range 0.6--1.0 μm, with smaller changes for other matrix species. At 5.5 keV, similar effects were observed, but over a depth interval of 0.3 to 0.7 μm. No yield changes were detected at 2.5-keV impact energy. The yield changes at the higher energies were again correlated with the onset of changes in topography. No change in ion yield or surface topography was noted for Cs + bombardment of Si or GaAs. The topography and ion yield changes are affected by the angle of incidence and, for Si, the oxygen coverage. The results show that the practice of normalizing secondary ion mass spectrometry dopant profiles to a matrix signal must be modified for situations where matrix yield changes occur

  13. Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O2+ bombardment

    International Nuclear Information System (INIS)

    Franzreb, Klaus; Williams, Peter; Loerincik, Jan; Sroubek, Zdenek

    2003-01-01

    Mass-resolved (and emission-charge-state-resolved) low-energy ion back-scattering during dynamic O 2 + bombardment of a silicon surface was applied in a Cameca IMS-3f secondary ion mass spectrometry (SIMS) instrument to determine the bombarding energy dependence of the ratio of back-scattered O 2+ versus O + . While the ratio of O 2+ versus O + drops significantly at reduced bombarding energies, O 2+ back-scattered from silicon was still detectable at an impact energy (in the lab frame) as low as about 1.6 keV per oxygen atom. Assuming neutralization prior to impact, O 2+ ion formation in an asymmetric 16 O→ 28 Si collision is expected to take place via 'collisional double ionization' (i.e. by promotion of two outer O 2p electrons) rather than by the production of an inner-shell (O 2s or O 1s) core hole followed by Auger-type de-excitation during or after ejection. A molecular orbital (MO) correlation diagram calculated for a binary 'head-on' O-Si collision supports this interpretation

  14. Influence of ion bombardment on structure and properties of TiZrN thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Wei, E-mail: james722@itrc.narl.org.tw [Instrument Technology Research Center, National Applied Research Laboratories Taiwan (China); Huang, Jia-Hong; Yu, Ge-Ping [Department of Engineering and System Science, National Tsing Hua University, Taiwan (China); Hsiao, Chien-Nan; Chen, Fong-Zhi [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China)

    2015-11-01

    Highlights: • (Ti,Zr)N thin films were produced using dual guns with Ti and Zr targets. • Ti{sub 0.5}Zr{sub 0.5}N shows excellent hardness of 37.8 GPa with exhibiting (1 1 1) preferred orientation. • Resistivity is inverse proportional to the packing density. • Hardness is proportional to the packing density. - Abstract: The study is focused on the characterization of TiZrN thin film by controlling the behavior of ion bombardment. Thin films are grown using radio frequency magnetron sputtering process on Si wafer. The negative bias voltage ranging from −20 V to −130 V was applied to the substrate. The ion current density increases rapidly as substrate bias is lower than −60 V, then slightly increases as the critical value about −60 V is exceeded. At the substrate bias of −60 V, the ion current density is close to 0.56 mA/cm{sup 2}. The resistivity measured by four-point probe decreases from conditions −20 V to −60 V and then increases for substrate bias increases from −60 V to −130 V. The resistivity of TiZrN films is contributed from the packing factor. The N/TiZr ratios about 1 were measured by Rutherford backscattering spectrometer, and the packing factors of TiZrN films can also be obtained by the results of RBS. Field Emission scanning electron microscope (FEG-SEM) is used to characterize the thickness and structure of the deposited TiZrN film. X-ray diffraction (XRD) is used to determine the preferred orientation and lattice parameter. The precursor results of XRD show that all the coating samples exhibited (1 1 1) preferred orientation, and the hardness values of TiZrN films were ranging from 20 to 40 GPa. To sum up the precursor studies, the TiZrN films which can improve the properties from TiN and ZrN is a new ceramic material with higher potential. Following the advance process and analysis research, the structure and properties can be correlated and as a reference for industry application.

  15. M-subshell ionization of U by light-ion bombardment

    International Nuclear Information System (INIS)

    Jesus, A.P.; Ribeiro, J.P.

    1988-01-01

    M X-rays of U were produced by proton, deuteron and alpha-particle bombardment in the energy range of 0.20-1.00 MeV/u. N 6.7 →M 5 ((M subα)),N 6 →M 4 (M β ), N 5 →M 3 (M γ ), N 4 →M 2 and N 2 →M 1 line yields were obtained from a least-squares fit to the spectra and used to convert M X-ray production into M-subshell ionization cross sections. The uncertainty induced by the atomic parameters (X-ray fluorescence yields, Coster-Kronig and radiative transition rates) used in the conversion is discussed. The subshell ionization cross sections are then compared to PWBA values corrected for Coulomb deflection and energy loss according to Brandt and Lapicki, to the semiclassical theoretical values of Kocbach and to relativistic PWBA results, corrected for Coulomb and binding effects, of Chen et al. Intrashell transitions induced by the projectile and multiple ionization are suggested as causes of disagreement between theory and experiment, especially for alpha-particles. It is concluded that theory must go beyond the simple picture of the first-order pertubation approximation to explain M-subshell results and the care must be taken in the choice of wave functions. (author) [pt

  16. Effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer on Au(1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Xi Luan [Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7 (Canada); Zheng Zhi; Lam, N.-S. [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China); Grizzi, Oscar [Centro Atomico Bariloche, 8400 San Carlos de Bariloche, Rio Negro (Argentina); Lau, W.-M. [Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7 (Canada)], E-mail: llau22@uwo.ca

    2007-10-31

    The effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer (SAM) on Au(1 1 1) are studied with scanning tunneling microscopy (STM) and X-ray photoemission spectroscopy (XPS). The STM and XPS results show that proton bombardment with proton energy as low as 2 eV can induce cross-linking of the adsorbed alkanethiols and transform the original ordered SAM lattice to an array of nanoclusters of the cross-linked alkanethiols. For a bombardment at 3 eV with a fluence of 3x10{sup 15} cm{sup -2}, the typical cluster size is about 5 nm. In addition, the cluster size distribution is narrow, with no cluster larger than 8 nm. The cluster growth can be promoted by increasing the fluence at a fixed bombardment energy or increasing the energy at a fixed fluence. This indicates that surface diffusion of alkanethiols and cluster growth can be harnessed by the control of the bombardment energy and fluence.

  17. Effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer on Au(1 1 1)

    International Nuclear Information System (INIS)

    Xi Luan; Zheng Zhi; Lam, N.-S.; Grizzi, Oscar; Lau, W.-M.

    2007-01-01

    The effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer (SAM) on Au(1 1 1) are studied with scanning tunneling microscopy (STM) and X-ray photoemission spectroscopy (XPS). The STM and XPS results show that proton bombardment with proton energy as low as 2 eV can induce cross-linking of the adsorbed alkanethiols and transform the original ordered SAM lattice to an array of nanoclusters of the cross-linked alkanethiols. For a bombardment at 3 eV with a fluence of 3x10 15 cm -2 , the typical cluster size is about 5 nm. In addition, the cluster size distribution is narrow, with no cluster larger than 8 nm. The cluster growth can be promoted by increasing the fluence at a fixed bombardment energy or increasing the energy at a fixed fluence. This indicates that surface diffusion of alkanethiols and cluster growth can be harnessed by the control of the bombardment energy and fluence

  18. Charge-state correlated cross sections for the production of low-velocity highly charged Ne ions by heavy-ion bombardment

    International Nuclear Information System (INIS)

    Gray, T.J.; Cocke, C.L.; Justiniano, E.

    1980-01-01

    We report measured cross sections for the collisional production of highly charged low-velocity Ne recoil ions resulting from the bombardment of a thin Ne gas target by highly charged 1-MeV/amu C, N, O, and F projectiles. The measurements were made using time-of-flight techniques which allowed the simultaneous identification of the final charge state of both the low-velocity recoil ion and the high-velocity projectile for each collision event. For a given incident-projectile charge state, the recoil charge-state distribution is very dependent upon the final charge state of the projectile. Single- and double-electron capture events by incident bare nuclei and projectile K-shell ionization during the collision cause large shifts in the recoil charge-state distributions toward higher charge states. A previously proposed energy-deposition model is modified to include the effects of projectile charge-changing collisions during the collision for bare and hydrogenlike projectiles and is used to discuss the present experimental results

  19. Nano-scale pattern formation on the surface of HgCdTe produced by ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, A.B.; Gudymenko, A.I.; Kladko, V.P.; Korchevyi, A.A.; Savkina, R.K.; Sizov, F.F.; Udovitska, R.S. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev (Ukraine)

    2015-08-15

    Presented in this work are the results concerning formation of nano-scale patterns on the surface of a ternary compound Hg{sub 1-x}Cd{sub x}Te (x ∝ 0.223). Modification of this ternary chalcogenide semiconductor compound was performed using the method of oblique-incidence ion bombardment with silver ions, which was followed by low-temperature treatment. The energy and dose of implanted ions were 140 keV and 4.8 x 10{sup 13} cm{sup -2}, respectively. Atomic force microscopy methods were used for the surface topography characterization. The structural properties of MCT-based structure was analyzed using double and triple crystal X-ray diffraction to monitor the disorder and strain of the implanted region as a function of processing conditions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Polymerization of solid C60 under C60 cluster ion bombardment

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Vacík, Jiří; Naramoto, H.; Narumi, K.

    2009-01-01

    Roč. 95, - (2009), s. 867-873 ISSN 0947-8396 R&D Projects: GA AV ČR(CZ) KAN400480701; GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : fulleren * cluster * bombardment * polymerization Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.595, year: 2009 http://www.springerlink.com/content/0947-8396

  1. Defect production and annihilation in metals through electronic excitation by energetic heavy ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Iwase, Akihiro [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1997-03-01

    Defect production, radiation annealing and defect recovery are studied in Ni and Cu irradiated with low-energy ({approx}1-MeV) and high-energy ({approx}100-MeV) ions. Irradiation of Ni with {approx}100-MeV ions causes an anomalous reduction, or even a complete disappearance of the stage-I recovery. This result shows that the energy transferred from excited electrons to lattice atoms through the electron-lattice interaction contributes to the annihilation of the stage-I interstitials. This effect is also observed in Ni as a large radiation annealing during 100-MeV heavy ion irradiation. On the other hand, in Cu thin foils, we find the defect production process strongly associated with electron excitation, where the defect production cross section is nearly proportional to S{sub e}{sup 2}. (author)

  2. Production of Mg and Al Auger electrons by noble gas ion bombardment of Mg and Al surfaces. [3 KeV, electron promotion

    Energy Technology Data Exchange (ETDEWEB)

    Ferrante, J; Pepper, S V [National Aeronautics and Space Administration, Cleveland, Ohio (USA). Lewis Research Center

    1976-08-01

    In this letter the relative production efficiency of Mg and Al Auger electrons by He, Ne, Ar, Kr and Xe ion bombardment as a function of ion energy (<=3 keV) is reported. Some comments on the interpretation of the results in terms of electron promotion are also given.

  3. Measures to alleviate the back bombardment effect of thermionic rf electron gun

    International Nuclear Information System (INIS)

    Huang, Y.; Xie, J.

    1991-01-01

    Thermionic rf electron gun finds application as a high brightness electron source for rf linacs. However, cathode heating from back-bombardment effect causes a ramp in the macro-pulse beam current and limit the usable pulse width. Three methods: ring cathode, magnetic deflection and laser assisted heating are studied in theory and in experiment. The results of these studies are reported

  4. Structural changes IN THE Kh20N45M4B nickel alloys and THE Kh16N15M3B steel due to helium ion bombardment

    International Nuclear Information System (INIS)

    Kalin, B.A.; Chernikov, U.N.; Chernov, I.I.; Kozhevnikov, O.A.; Shishkin, G.N.; Yakushin, V.L.

    1986-01-01

    Using transmission electron microscopy, x-ray structural analysis, and the thermal desorption techniques, the authors carried out a detailed study of the structural and phase changes, defect formation, and helium accumulation in the He + -bombarded 16-15 austenitic steels and 20-45 nickel alloys. Microstructure of the bombarded specimens was studied using the methods of transmission electron microscopy of thin foils in the EVM-100, and EM-301G electron microscopes. Results of x-ray studies on the bombarded specimens are presented. The conducted studies show that bombardment of structural materials with light ions can lead to significant structural damages and changes in the chemical and phase composition of the surface layer. The possible mechanisms of the changes in the chemical and phase composition include selective sputtering and radiation-induced accelerated diffusion of elements in the field of internal lateral stresses developing during the He + implantation process

  5. Influence of both ion bombardment and chemical treatment processes on the electrical conductivity of PVC/poly aniline composites

    International Nuclear Information System (INIS)

    Gad, E.A.M.; Ashour, A.H.; Abdel-Hamid, H.M.; Sayed, W.M.

    1999-01-01

    In this article the changes in the electrical conductivity of PVC/poly aniline composites, as temperature consecutively increases, have been measured. The measurement were taken with correspondence to a control series of the composites under two processes:A. Composite samples bombarded with Ar + ions with fluence 2.44 x 10 13 beam ions /cm 2 ., sec 4 of 4 ke V beam energy where argon atoms can induce defects in the surface layer take place. Composite samples treated chemically with concentrated H 2 SO 4 as dopant which reacts with nitrogen atom in aniline. The measurements were also, done with the composites as the ratio of poly(aniline) stepped upward

  6. Uranium targets sandwiched between carbon layers for use on target wheels and on a Wobbler in heavy-ion bombardments

    International Nuclear Information System (INIS)

    Folger, H.; Hartmann, W.; Klemm, J.; Thalheimer, W.

    1989-01-01

    Uranium layers of ≅ 0.4 mg/cm 2 are evaporated by means of a 6 kW electron-beam gun onto 0.04 mg/cm 2 thick carbon films in a high-vacuum process; a protecting layer of ≅ 0.01 mg/cm 2 of carbon is added in the same vacuum cycle. The evaporation- and deposition yields are discussed and measurements of target characteristics are described. C/U/C sandwich targets in the shape of a sector of an annulus are prepared for use on rotating target wheels of 155 mm radius to be bombarded with a pulsed beam of heavy ions. One type of circular targets of 20 mm in diameter is mounted to a target wobbler. Both, wheel and wobbler, distribute the intensity of the heavy-ion beam to a larger area to reduce radiation damages. Examples of target applications will be mentioned. (orig.)

  7. X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

    International Nuclear Information System (INIS)

    Abendroth, B.; Gago, R.; Eichhorn, F.; Moeller, W.

    2004-01-01

    Relaxation of the intrinsic stress of cubic boron nitride (cBN) thin films has been studied by x-ray diffraction (XRD) using synchrotron light. The stress relaxation has been attained by simultaneous medium-energy ion bombardment (2-10 keV) during magnetron sputter deposition, and was confirmed macroscopically by substrate curvature measurements. In order to investigate the stress-release mechanisms, XRD measurements were performed in in-plane and out-of-plane geometry. The analysis shows a pronounced biaxial state of compressive stress in the cBN films grown without medium-energy ion bombardment. This stress is partially released during the medium-energy ion bombardment. It is suggested that the main path for stress relaxation is the elimination of strain within the cBN grains due to annealing of interstitials

  8. Production of Oxidants by Ion Bombardment of Icy Moons in the Outer Solar System

    Directory of Open Access Journals (Sweden)

    Philippe Boduch

    2011-01-01

    Full Text Available Our groups in Brazil, France and Italy have been active, among others in the world, in performing experiments on physical-chemical effects induced by fast ions colliding with solids (frozen gases, carbonaceous and organic materials, silicates, etc. of astrophysical interest. The used ions span a very large range of energies, from a few keV to hundreds MeV. Here we present a summary of the results obtained so far on the formation of oxidants (hydrogen peroxide and ozone after ion irradiation of frozen water, carbon dioxide and their mixtures. Irradiation of pure water ice produces hydrogen peroxide whatever is the used ion and at different temperatures. Irradiation of carbon dioxide and water frozen mixtures result in the production of molecules among which hydrogen peroxide and ozone. The experimental results are discussed in the light of the relevance they have to support the presence of an energy source for biosphere on Europa and other icy moons in the outer Solar System.

  9. Measurement of ion species produced due to bombardment of 450 eV N{sub 2}{sup +} ions with hydrocarbons-covered surface of tungsten: Formation of tungsten nitride

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Bhatt, P. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Singh, B.K.; Singh, B.; Prajapati, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Shanker, R., E-mail: shankerorama@gmail.com [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India)

    2016-08-01

    A laboratory experiment has been performed to study the ions that are produced due to collisions of 450 eV N{sub 2}{sup +} ions with a hydrocarbons-covered surface of polycrystalline tungsten at room temperature. Using a TOF mass spectrometry technique, the product ions formed in these collisions have been detected, identified and analyzed. Different ion–surface reaction processes, namely, neutralization, reflection, surface induced dissociation, surface induced chemical reactions and desorption are observed and discussed. Apart from the presence of desorbed aliphatic hydrocarbon and other ions, the mass spectra obtained from the considered collisions show the formation and sputtering of tungsten nitride (WN). A layer of WN on tungsten surface is known to decrease the sputtering of bulk tungsten in fusion devices more effectively than when the tungsten is bombarded with other seeding gases (He, Ar). It is further noted that there is a negligible diffusion of N in the bulk tungsten at room temperature.

  10. Direct thermal effects of the Hadean bombardment did not limit early subsurface habitability

    Science.gov (United States)

    Grimm, R. E.; Marchi, S.

    2018-03-01

    Intense bombardment is considered characteristic of the Hadean and early Archean eons, yet some detrital zircons indicate that near-surface water was present and thus at least intervals of clement conditions may have existed. We investigate the habitability of the top few kilometers of the subsurface by updating a prior approach to thermal evolution of the crust due to impact heating, using a revised bombardment history, a more accurate thermal model, and treatment of melt sheets from large projectiles (>100 km diameter). We find that subsurface habitable volume grows nearly continuously throughout the Hadean and early Archean (4.5-3.5 Ga) because impact heat is dissipated rapidly compared to the total duration and waning strength of the bombardment. Global sterilization was only achieved using an order of magnitude more projectiles in 1/10 the time. Melt sheets from large projectiles can completely resurface the Earth several times prior to ∼4.2 Ga but at most once since then. Even in the Hadean, melt sheets have little effect on habitability because cooling times are short compared to resurfacing intervals, allowing subsurface biospheres to be locally re-established by groundwater infiltration between major impacts. Therefore the subsurface is always habitable somewhere, and production of global steam or silicate-vapor atmospheres are the only remaining avenues to early surface sterilization by bombardment.

  11. The Effect of Gas Ion Bombardment on the Secondary Electron Yield of TiN, TiCN and TiZrV Coatings For Suppressing Collective Electron Effects in Storage Rings

    International Nuclear Information System (INIS)

    Le Pimpec, F.; Kirby, R.E.; King, F.K.; Pivi, M.

    2006-01-01

    In many accelerator storage rings running positively charged beams, ionization of residual gas and secondary electron emission (SEE) in the beam pipe will give rise to an electron cloud which can cause beam blow-up or loss of the circulating beam. A preventative measure that suppresses electron cloud formation is to ensure that the vacuum wall has a low secondary emission yield (SEY). The SEY of thin films of TiN, sputter deposited Non-Evaporable Getters and a novel TiCN alloy were measured under a variety of conditions, including the effect of re-contamination from residual gas

  12. Moessbauer of phase separation in FeNi multilayers under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, L.; Paesano, A.; Brueckman, M.E. [Rio Grande do Sul Univ., Porto Alegre, RS (Brazil). Inst. de Fisica; Scorzelli, R.B.; Dominguez, A.B. [Centro Brasileiro de Pesquisas Fisicas (CBPF), Rio de Janeiro, RJ (Brazil); Shinjo, T.; Ono, T.; Hosoito, N. [Kyoto Univ. (Japan). Inst. for Chemical Research

    1997-01-01

    We investigated the effect of noble gas irradiation (He, Ne, Ar and Xe) on the Fe-Ni multilayers with a very thin modulation and nominal composition in the invar region Fe{sub 0.63} Ni{sub 0.37}. The evaluation of the formation/stability of the Fe-Ni phases formed under irradiation with different ions and doses was followed by conversion electron Moessbauer spectroscopy (CEMS). (author). 21 refs., 4 figs., 2 tabs.; e-mail: scorza at novell.cat.cbpf.br.

  13. Study of beryllium redeposition under bombardment by high intensity -low energy- hydrogen ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Gureev, V.M.; Guseva, M.I.; Danelyan, L.S. [Russian Research Centre Kurchatov Inst., Moscow (Russian Federation)] [and others

    1998-01-01

    The results of studying the erosion of beryllium under an effect of intense ion fluxes with the energy of 250 eV, at the fluences {approx}10{sup 2}1 cm{sup -2}, at the MAGRAS-stand are given. The operating conditions under which a practically-complete redeposition of the sputtered beryllium upon the target surface were experimentally-realized. A change in the microstructure of a beryllium target under sputtering and redeposition is analyzed. Some technological applications are considered. (author)

  14. Energy and dose characteristics of ion bombardment during pulsed laser deposition of thin films under pulsed electric field

    International Nuclear Information System (INIS)

    Fominski, V.Yu.; Nevolin, V.N.; Smurov, I.

    2004-01-01

    Experiments on pulsed laser deposition of Fe films on Si substrates were performed with the aim to analyze the role of factors determining the formation of an energy spectrum and a dose of ions bombarding the film in strong pulsed electric fields. The amplitude of the high-voltage pulse (-40 kV) applied to the substrate and the laser fluence at the Fe target were fixed during the deposition. Owing to the high laser fluence (8 J/cm 2 ) at a relatively low power (20 mJ), the ionization of the laser plume was high, but the Fe vapor pressure near the substrate was low enough to avoid arcing. Electric signals from a target exposed to laser radiation were measured under different conditions (at different delay times) of application of electric pulses. The Si(100) substrates were analyzed using Rutherford ion backscattering/channeling spectrometry. The ion implantation dose occurred to be the highest if the high-voltage pulse was applied at a moment of time when the ion component of the plume approached the substrate. In this case, the implanted ions had the highest energy determined by the amplitude of the electric pulse. An advance or delay in applying a high-voltage pulse caused the ion dose and energy to decrease. A physical model incorporating three possible modes of ion implantation was proposed for the interpretation of the experimental results. If a laser plume was formed in the external field, ions were accelerated from the front of the dense plasma, and the ion current depended on the gas-dynamic expansion of the plume. The application of a high-voltage pulse, at the instant when the front approached the substrate, maintained the mode that was characteristic of the traditional plasma immersion ion implantation, and the ion current was governed by the dynamics of the plasma sheath in the substrate-to-target gap. In the case of an extremely late application of a high-voltage pulse, ions retained in the entire volume of the experimental chamber (as a result of the

  15. Nonlinear Amplitude Evolution During Spontaneous Patterning of Ion-Bombarded Si(001)

    International Nuclear Information System (INIS)

    Chason, Eric; Erlebacher, Jonah; Aziz, Michael J.; Floro, Jerold A.; Sinclair, Michael B.

    1999-01-01

    The time evolution of the amplitude of periodic nanoscale ripple patterns formed on Ar+ sputtered Si(OOl ) surfaces was examined using a recently developed in situ spectroscopic technique. At sufficiently long times, we find that the amplitude does not continue to grow exponentially as predicted by the standard Bradley-Harper sputter rippling model. In accounting for this discrepancy, we rule out effects related to the concentration of mobile species, high surface curvature, surface energy anisotropy, and ion-surface interactions. We observe that for all wavelengths the amplitude ceases to grow when the width of the topmost terrace of the ripples is reduced to approximately 25 nm. This observation suggests that a short circuit relaxation mechanism limits amplitude . growth. A strategy for influencing the ultimate ripple amplitude is discussed

  16. Radiation-induced segregation in light-ion bombarded Ni-8% Si

    International Nuclear Information System (INIS)

    Packan, N.H.; Heatherly, L.; Kesternich, W.; Schroeder, H.

    1986-01-01

    Tensile specimens 60 μm thick of Ni-8 at. % Si have been bombarded at 475 0 C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700 0 C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no noticeable depletion zone and a more gradual fall-off compared to the profiles from external surfaces. The variations of RIS among boundaries and with type of interface probably reflect, at least in part, intrinsic differences in sink efficiency

  17. Measurements of secondary neutrons producted from thick targets bombarded by heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Kurosawa, T.; Nakamura, T. [Tohoku Univ., Sendai (Japan). Cyclotron and Radioisotope Center; Nakao, N.; Shibata, T.; Uwamino, Y.; Nakanishi, N.; Fukumura, A.; Kumamoto, Y.

    1997-03-01

    We measured neutron angular and energy distributions from high energy heavy ions stopping in targets of carbon, aluminum, copper and lead at HIMAC. These spectra are much harder for the lighter target nucleus like carbon. This means that the momentum transfer in the forward direction from heavy ion beam to lighter nuclei is much higher than that to heavier nuclei. (author)

  18. Successive ionization of positive ions of carbon and nitrogen by electron bombardment

    International Nuclear Information System (INIS)

    Donets, E.D.; Ilyushchenko, V.I.

    Experimental studies of deep ionization of heavy ions are described. The applications of such studies in atomic physics, plasma physics and space physics are discussed. Investigations using intersecting ion-electron beams, shifted beams and ion trap sources are described, and data are presented for multi-charged ions of carbon, oxygen and nitrogen. A detailed description of the development of the IEL (electron beam ionizer) source, and the KRION (cryogenic version) source is given, and further data for the multiple ionization of carbon and nitrogen are given for charge states up to C 6+ and N 7+ . The advantages and disadvantages of the KRION source are discussed, and preliminary studies of a new torroidal ion trap source (HIRAC) are presented. (11 figs, 57 refs) (U.S.)

  19. Vacancy production in molybdenum by low energy light ion bombardment: computer simulation

    International Nuclear Information System (INIS)

    Hou, M.; Veen, A. van; Caspers, L.M.; Ypma, M.R.

    1983-01-01

    A comparison is made of the room temperature vacancy production measured with THDS (thermal helium desorption spectrometry) and the Frenkel pair production calculated in the binary collision approximation with MARLOWE for 0.5 to 3 keV He + ions and 1.5 keV protons injected into a Mo(110) crystal. Using the distributions of Frenkel pair separation distances calculated with MARLOWE for various values of the displacement threshold Esub(d), the experimental data are matched by selecting a cut-off radius Rsub(c) so that for separations larger than Rsub(c) the Frenkel pairs survive recombination. It became apparent that all experimental data could be reasonably described by a pair of parameters Esub(d) = 33 eV and Rsub(c) = 3.7 a 0 (a 0 is the lattice cell edge unit). The value of Esub(d) we found is close to the experimentally determined threshold energy for permanent displacements in Mo. A detailed analysis of the recombination process using the MARLOWE results shows that the found cut-off radius corresponds with an effective recombination radius Rsub(o) = 2.8 a 0 . In the literature lower (theoretical) values of Rsub(o) = 1.4 - 2.1 a 0 are quoted for correlated recombination of single Frenkel pairs in molybdenum. (orig.)

  20. MD simulation of atomic displacements in metals and metallic bilayers under low energy ion bombardment at 300 K

    International Nuclear Information System (INIS)

    Kornich, G.V.; Betz, G.; Bazhin, A.I.

    1999-01-01

    MD simulations of 100 eV Ar ion bombardment of (1 0 0) Ni and Al as well as Al/Ni bilayer crystals at 300 K have been performed and compared to previous calculations at 0 K. The Al/Ni bilayer crystal consisted of one Al layer on a (1 0 0) Ni substrate. Sputtering yields for Ni and Al/Ni show no temperature dependence, while for Al a pronounced increase with temperature was observed. The contributions of different mechanisms to the production of surface and bulk defects are discussed. The mean square displacement (MSD) of atoms is in all cases larger at 300 K as compared to 0 K. The larger MSD at 300 K is mainly due to an increase in lateral (perpendicular to the ion beam) motion of displaced atoms. Similar the number of atomic jumps, in which an atom leaves its original Wigner-Seitz cell, increases in all cases with temperature. For the pure elements the production of bulk vacancies and interstitials decreases with temperature, but the number of surface vacancies and ad-atoms increases with temperature. For the bilayer system practically no temperature dependence for defects was observed

  1. On the defect structure due to low energy ion bombardment of graphite

    Science.gov (United States)

    Marton, D.; Bu, H.; Boyd, K. J.; Todorov, S. S.; Al-Bayati, A. H.; Rabalais, J. W.

    1995-03-01

    Graphite surfaces cleaved perpendicular to the c axis have been irradiated with low doses of Ar + ions at 50 eV kinetic energy and perpendicular incidence. Scanning tunneling micrographs (STM) of these irradiated surfaces exhibited dome-like features as well as point defects. These dome-like features retain undisturbed graphite periodicity. This finding is attributed to the stopping of ions between the first and second graphite sheets. The possibility of doping semiconductors at extremely shallow depths is raised.

  2. The change of corrosion resistance of metals after bombardment by inert gas ions

    International Nuclear Information System (INIS)

    Vasil'ev, M.A.; Panarin, V.E.; Kosyachkov, A.A.

    2002-01-01

    Work functions of electrons and secondary ions of iron and oxygen from the surface of pure iron specimens pre-irradiated by argon ions were studied experimentally. One made use of the determined dependences in the experiments to passivate surface of low-carbon steel using the BULAT type commercial facilities. The designed extra device for those facilities ensured the required irradiation doses (equal to 10 17 atom x cm -2 ) resulting in improvement of steel corrosion resistance by several times [ru

  3. Short-range order in InSb amorphized under ion bombardment

    International Nuclear Information System (INIS)

    Pavlov, P.V.; Tetel'baum, D.I.; Gerasimov, A.I.

    1979-01-01

    The investigation of short-range order is carried out in polycrystal InSb films, irradiated with Ne + ions with E=150 keV and with the 2x10 15 ion/cm 2 dose. The data are obtained testifying to the film amorphization, the cause of which is the defect storage but not the local melting. Stability of the obtained amorphous phase at the room temperature is noted

  4. Use of positive ion fast atom bombardment mass spectrometry for rapid identification of a bile alcohol glucuronide isolated from cerebrotendinous xanthomatosis patients

    International Nuclear Information System (INIS)

    Dayal, B.; Salen, G.; Tint, G.S.; Shefer, S.; Benz, S.W.

    1990-01-01

    The identification of a major biliary and plasma bile alcohol glucuronide, 5 beta-cholestane-3 alpha, 7 alpha, 12 alpha, 25-tetrol-3-0-beta-D-glucuronide, present in cerebrotendinous xanthomatosis (CTX) patients, was investigated by positive ion fast atom bombardment mass spectrometry (FAB-MS). The spectrum was characterized by abundant ions formed by attachment of a proton, [M + H]+, or of alkali ions, [M + Na]+ and [M + 39K]+, to the glucuronide salt. These ions allowed an unambiguous deduction of the molecular weight of the sample. It is suggested that FAB-MS could be used in the rapid diagnosis of CTX

  5. Secondary ions produced from condensed rare gas targets under highly charged MeV/amu heavy ion bombardment

    International Nuclear Information System (INIS)

    Tawara, H.; Tonuma, T.; Kumagai, H.; Matsuo, T.

    1994-01-01

    Secondary ions produced from condensed rare gas targets are observed under MeV/amu, highly charged, heavy ion impact. The intensities of the observed cluster ions decrease smoothly as the cluster sizes become large but show some discontinuities at particular sizes of cluster ions. This seems to be closely related to the stabilities of cluster ion structures. It is also noted that very few doubly charged or practically no triply/higher charged ions have been observed, in sharp contrast to that of some condensed molecular targets. (orig.)

  6. A comparison between the irradiation damage response of spinel and zirconia due to Xe ion bombardment

    International Nuclear Information System (INIS)

    Sickafus, K.E.; Wetteland, C.J.; Baker, N.P.; Yu Ning; Devanathan, R.; Nastasi, M.; Bordes, N.

    1998-01-01

    The mechanical properties of Xe-implanted spinel and cubic zirconia surfaces, as determined by nano-indentation measurements, are distinct and the differences can be related to their microstructures. Upon Xe 2+ ion irradiation to high dose at cryogenic temperature (120 K), the Young's modulus of irradiated spinel falls dramatically until the modulus is only about 3/4 the un-irradiated value. The maximum modulus occurs concurrent with the formation of a metastable crystalline phase of spinel. The subsequent elastic softening at higher Xe 2+ doses is an indication of the onset of amorphization of the spinel. Xe-implanted zirconia surfaces behave differently, in all cases showing almost no change in elastic modulus with increasing Xe 2+ ion dose. This is consistent with microstructural observations of Xe-implanted zirconia crystals which, unlike spinel, show no change in crystal structure with increasing ion dose. The hardness of both spinel and zirconia increases slightly for low Xe 2+ ion doses. At higher doses, zirconia shows little change in hardness, while the hardness of the implanted spinel falls by more than a factor of two. The initial increase in hardness of both spinel and zirconia is consistent with point defect accumulation and the precipitation of small interstitial clusters, while the drop in hardness of spinel at high Xe 2+ ion doses is due to the formation of an amorphous phase. (orig.)

  7. Monte Carlo simulation for neutron yield produced by bombarding thick targets with high energy heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Oranj, Leila Mokhtari; Oh, Joo Hee; Yoon, Moo Hyun; Lee, Hee Seock [POSTECH, Pohang (Korea, Republic of)

    2013-04-15

    One of radiation shielding issues at heavy-ion accelerator facilities is to estimate neutron production by primary heavy ions. A few Monte Carlo transport codes such as FLUKA and PHITS can work with primary heavy ions. Recently IBS/RISP((Rare Isotope Science Project) started to design a high-energy, high-power rare isotope accelerator complex for nuclear physics, medical and material science and applications. There is a lack of experimental and simulated data about the interaction of major beam, {sup 238}U with materials. For the shielding design of the end of first accelerating section section, we calculate a differential neutron yield using the FLUKA code for the interaction of 18.5 MeV/u uranium ion beam with thin carbon stripper of 1.3 μm). The benchmarking studies were also done to prove the yield calculation for 400 MeV/n {sup 131}Xe and other heavy ions. In this study, the benchmarking for Xe-C, Xe-Cu, Xe-Al, Xe-Pb and U-C, other interactions were performed using the FLUKA code. All of results show that the FLUKA can evaluate the heavy ion induced reaction with good uncertainty. For the evaluation of neutron source term, the calculated neutron yields are shown in Fig. 2. The energy of Uranium ion beam is only 18.5 MeV/u, but the energy of produced secondary neutrons was extended over 100 MeV. So the neutron shielding and the damage by those neutrons is expected to be serious. Because of thin stripper, the neutron intensity at forward direction was high. But the the intensity of produced secondary photons was relatively low and mostly the angular property was isotropic. For the detail shielding design of stripper section of RISP rare istope accelerator, the benchmarking study and preliminary evaluation of neutron source term from uranium beam have been carried out using the FLUKA code. This study is also compared with the evaluation results using the PHITS code performed coincidently. Both studies shows that two monte carlo codes can give a good results for

  8. The search for molecular effects in range corrections: boron determination by proton bombardment

    International Nuclear Information System (INIS)

    Olivier, C.; Peisach, M.

    1985-01-01

    Three different nuclear reactions viz. 10 B(p,αγ) 7 Be, 10 B(p,p,'γ) 10 B, and 11 B(p,p'γ) 11 B were used to analyse 21 pure boron compounds and mixtures of known composition by prompt gamma-ray spectrometry under proton bombardment. Elemental stopping powers were calculated from tables and used to compute the stopping power of the target matrices by Bragg's Law. Apparent discrepancies in the measured yield could point to deviations from Bragg's Law and hence to molecular effects. The maximum value for any molecular effect was found to be < 8,3%

  9. Studies on the bombardment of condensed molecular gases at liquid-He temperatures by keV electrons and light ions

    International Nuclear Information System (INIS)

    Boergesen, P.

    1982-09-01

    Films of solid H 2 , D 2 and N 2 were irradiated with keV electrons and ions. Stopping cross sections and ranges of 0.3-10 keV/amu light ions in solid H 2 and D 2 are in good agreement with experimental and theoretical data on gaseous targets. In contrast, both stopping cross section and range measurements in solid N 2 suggest that the stopping here is only about half of that in N 2 -gas. This ''phase-effect'' is further supported by secondary emission measurements. Secondary electron emission coefficients for 2-10 keV H 1 + , H 2 + , H 3 + , D 3 + , D 2 H + , 4 He + , 14 N + and 20 Ne + incident on solids H 2 , D 2 and N 2 are in reasonable agreement with previous results for electron-incidence. The rather large erosion yields for 1-3 keV electrons incident on solid D 2 depend strongly on target thickness (for thin films), but weakly on energy. Bulk yields for 2 keV electrons were approximately 8 H 2 /electron, approximately 4 D 2 /electron and approximately 0.5 N 2 /electron. Secondary ion emission during ion bombardment seems to be predominantly reflected projectiles in the case of N 2 -targets, while it may be explained as sputtered particles from H 2 - and D 2 -targets. Preliminary results on the erosion of solid H 2 and D 2 by keV light ions indicate very large erosion yields (approx. 400 H 2 /atom for 2 keV protons) increasing strongly with energy. (Auth.)

  10. Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

    Science.gov (United States)

    Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

    2012-02-01

    Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

  11. Secondary ion emission from metal surfaces bombarded by 0.5-10 keV protons and hydrogens

    International Nuclear Information System (INIS)

    Kitamura, Akira; Yano, Syukuro

    1978-01-01

    Secondary ion emission coefficients by bombardment of 0.5 - 10 keV protons K 11 and atomic hydrogens K 01 on copper, stainless steel, molybdenum and evaporated gold surfaces have been measured in a moderate vacuum. Results are summarized as follows; 1) There is no significant difference between K 11 and K 01 . 2) Differences in K 11 and K 11 between different samples of the same material and between the sample before baking-out and the same sample after baking-out are of the order of several tens of percent. 3) The incident particle energy E sub(max) at which K 11 and K 01 have the maximum value lies in the keV region, and increases with the target mass. According to the fact that E sub(max) differs substantially from the energy at which the elastic stopping power has the maximum value, a characteristic length l is introduced and calculated to be of the order of hundreds of A; the factor exp (-x/l) represents the degree of contribution of collision at depth x to K 11 or K 01 . (author)

  12. Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment

    Science.gov (United States)

    Iwami, Motohiro; Kim, Su Chol; Kataoka, Yoshihide; Imura, Takeshi; Hiraki, Akio; Fujimoto, Fuminori

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar+ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  13. Origin of Si(LMM) Auger electron emission from silicon and Si-alloys by keV Ar/sup +/ ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Iwami, M; Kim, S; Kataoka, Y; Imura, T; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar/sup +/ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  14. Data on ionization, excitation, dissociation and dissociative ionization of targets by helium ion bombardments, (1)

    International Nuclear Information System (INIS)

    Oda, Nobuo; Urakawa, Junji

    1984-03-01

    This report presents a compilation of the experimental data on cross sections for the ionization, excitation, dissociation and dissociative ionization processes of targets in helium ion impacts on atoms and molecules under a single collision condition. These measurements were carried out in the energy range from several keV to 3.5 MeV. A systematic survey has been made on the literatures from 1975 to the end of 1982. A list of references is also given, including relevant papers published before 1975. (author)

  15. Silicide formation by Ar/sup +/ ion bombardment of Pd/Si

    Energy Technology Data Exchange (ETDEWEB)

    Lee, R Y; Whang, C N; Kim, H K; Smith, R J

    1988-08-01

    Palladium films, 45 nm thick, evaporated on to Si(111) were irradiated to various doses with 78 keV Ar/sup +/ ions to promote silicide formation. Rutherford backscattering spectroscopy (RBS) shows that intermixing has occurred across the Pd/Si interface at room temperature. The mixing behaviour is increased with dose which coincides well with the theoretical model of cascade mixing. The absence of deep RBS tails for palladium and the small area of this for silicon spectra indicate that short-range mixing occurs. From the calculated damage profiles computed with TRIM code, the dominant diffusion species is found to be silicon atoms in the Pd/Si system. It is also found that the initial compound formed by Ar/sup +/ irradiation is Pd/sub 2/Si which increases with dose. At a dose of 1 x 10/sup 16/ Ar/sup +/ cm/sup -2/, a 48 nm thickness of Pd/sub 2/Si was formed by ion-beam mixing at room temperature.

  16. Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering

    International Nuclear Information System (INIS)

    Rosen, Johanna; Widenkvist, Erika; Larsson, Karin; Kreissig, Ulrich; Mraz, Stanislav; Martinez, Carlos; Music, Denis; Schneider, J. M.

    2006-01-01

    The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O 2 /H 2 O environment. Ar + with an average kinetic energy of ∼5 eV was determined to be the dominating species in the plasma. The films were analyzed with x-ray diffraction, x-ray photoelectron spectroscopy, and elastic recoil detection analysis, demonstrating evidence for amorphous films with stoichiometric O/Al ratio. As the substrate bias potential was increased from -15 V (floating potential) to -100 V, the hydrogen content decreased by ∼70%, from 9.1 to 2.8 at. %. Based on ab initio calculations, these results may be understood by thermodynamic principles, where a supply of energy enables surface diffusion, H 2 formation, and desorption [Rosen et al., J. Phys.: Condens. Matter 17, L137 (2005)]. These findings are of importance for the understanding of the correlation between ion energy and film composition and also show a pathway to reduce impurity incorporation during film growth in a high vacuum ambient

  17. Nucleation of diamond by pure carbon ion bombardment--a transmission electron microscopy study

    International Nuclear Information System (INIS)

    Yao, Y.; Liao, M.Y.; Wang, Z.G.; Lifshitz, Y.; Lee, S.

    2005-01-01

    A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 deg. C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht et al. [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model

  18. Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Vorlíček, Vladimír; Dejneka, Alexandr; Chvostová, Dagmar; Jäger, Aleš; Vacík, Jiří; Jastrabík, Lubomír; Naramoto, H.; Narumi, K.

    2013-01-01

    Roč. 98, SI (2013), s. 49-55 ISSN 0042-207X R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : energetic cluster s * silicon * surface modification * amorphization * nanostructure * Raman scattering * ion channeling Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.426, year: 2013 http://ac.els-cdn.com/S0042207X13001759/1-s2.0-S0042207X13001759-main.pdf?_tid=04e9c946-21dd-11e3-b076-00000aacb361&acdnat=1379672070_859355b2850a09ac74bc8ff413e35dda

  19. Application of alpha spectrometry to the discovery of new elements by heavy-ion-beam bombardment

    International Nuclear Information System (INIS)

    Nitschke, J.M.

    1983-05-01

    Starting with polonium in 1898, α-spectrometry has played a decisive role in the discovery of new, heavy elements. For even-even nuclei, α-spectra have proved simple to interpret and exhibit systematic trends that allow extrapolation to unknown isotopes. The early discovery of the natural α-decay series led to the very powerful method of genetically linking the decay of new elements to the well-established α-emission of daughter and granddaughter nuclei. This technique has been used for all recent discoveries of new elements including Z = 109. Up to mendelevium (Z = 101), thin samples suitable for α-spectrometry were prepared by chemical methods. With the advent of heavy-ion accelerators new sample preparation methods emerged. These were based on the large momentum transfer associated with heavy-ion reactions, which produced energetic target recoils that, when ejected from the target, could be thermalized in He gas. Subsequent electrical deposition or a He-jet technique yielded samples that were not only thin enough for α-spectroscopy, but also for α- and #betta#-recoil experiments. Many variations of these methods have been developed and are discussed. For the synthesis of element 106 an aerosol-based recoil transport technique was devised. In the most recent experiments, α-spectrometry has been coupled with the magnetic analysis of the recoils. The time from production to analysis of an isotope has thereby been reduced to 10 - 6 s; while it was 10 - 1 to 10 0 s for He-jets and 10 1 to 10 3 s for rapid chemical separations. Experiments are now in progress to synthesize super heavy elements (SHE) and to analyze them with these latest techniques. Again, α-spectrometry will play a major role since the expected signature for the decay of a SHE is a sequence of α-decays followed by spontaneous fission

  20. Formation of Amino Acid Precursors by Bombardment of Interstellar Ice Analogs with High Energy Heavy Ions

    Science.gov (United States)

    Kobayashi, Kensei; Mita, Hajime; Yoshida, Satoshi; Shibata, Hiromi; Enomoto, Shingo; Matsuda, Tomoyuki; Fukuda, Hitoshi; Kondo, Kotaro; Oguri, Yoshiyuki; Kebukawa, Yoko

    2016-07-01

    A wide variety of organic compounds have been detected in extraterrestrial bodies. It has been recognized that carbonaceous chondrites contain pristine amino acids [1]. There are several scenarios of the formation of such extraterrestrial amino acids or their precursors. Greenberg proposed a scenario that complex organic compounds were formed in interstellar ices in dense clouds, which were brought into solar system small bodies when the solar system was formed [2]. The ice mantles of interstellar dust particles (ISDs) in dense clouds are composed of H2O, CO, CH3OH, CH4, CO2, NH3, etc. In order to verify the scenario, a number of laboratory experiments have been conducted where interstellar ice analogs were irradiated with high-energy particles [3,4] or UV [5,6], and formation of complex organic compounds including amino acid precursors were detected in the products. Though ion-molecular reactions in gaseous phase and surface reactions on the ice mantles have been studied intensively, much less works on cosmic rays-induced reaction have been reported. In order to study possible formation of complex molecules in interstellar ices, frozen mixtures of water, methanol and ammonia with various mixing ratios were irradiated with high-energy heavy ions such as carbon ions (290 MeV/u) and neon ions (400 MeV/u) from HIMAC, NIRS, Japan. For comparison, gaseous mixtures of water, ammonia, carbon monoxide, carbon dioxide, and/or methane were irradiated with protons (2.5 MeV) from a Tandem accelerator, Tokyo Tech, Japan. Amino acids in the products were determined by cation exchange HPLC after acid hydrolysis. Products, both before and after acid hydrolysis, were also characterized by FT-IR and other techniques. Amino acids were detected in the hydrolyzed products after mixture of CH3OH, NH3 and H2O with various mixing ratios were irradiated with heavy ions, including when their mixing ratio was set close to the reported value of the interstellar ices (10:1:37). In the HIMAC

  1. CO dissociation and CO hydrogenation on smooth and ion-bombarded Pd(1 1 1): SFG and XPS spectroscopy at mbar pressures

    Science.gov (United States)

    Rupprechter, G.; Kaichev, V. V.; Unterhalt, H.; Morkel, M.; Bukhtiyarov, V. I.

    2004-07-01

    The CO dissociation probability on transition metals is often invoked to explain the product distribution (selectivity) of catalytic CO hydrogenation. Along these lines, we have investigated CO adsorption and dissociation on smooth and ion-bombarded Pd(1 1 1) at pressures up to 1 mbar using vibrational sum frequency generation (SFG) and X-ray photoelectron spectroscopy (XPS). Under high pressure, CO adsorbate structures were observed that were identical to high-coverage structures in UHV. On ion-bombarded surfaces an additional species was detected which was attributed to CO bridge bonded to defect (low-coordinated) sites. On both surfaces, no indications of CO dissociation were found even after hours of 0.1 mbar CO exposure. However, exposing CO/H 2 mixtures to ion-bombarded Pd(1 1 1) produced carbonaceous deposits suggesting CH xO species as precursors for CO bond cleavage and that the formation of CH xO is facilitated by surface defects. The relevance of the observations for CO hydrogenation on Pd catalysts is discussed.

  2. CO dissociation and CO hydrogenation on smooth and ion-bombarded Pd(1 1 1): SFG and XPS spectroscopy at mbar pressures

    Energy Technology Data Exchange (ETDEWEB)

    Rupprechter, G.; Kaichev, V.V.; Unterhalt, H.; Morkel, M.; Bukhtiyarov, V.I

    2004-07-31

    The CO dissociation probability on transition metals is often invoked to explain the product distribution (selectivity) of catalytic CO hydrogenation. Along these lines, we have investigated CO adsorption and dissociation on smooth and ion-bombarded Pd(1 1 1) at pressures up to 1 mbar using vibrational sum frequency generation (SFG) and X-ray photoelectron spectroscopy (XPS). Under high pressure, CO adsorbate structures were observed that were identical to high-coverage structures in UHV. On ion-bombarded surfaces an additional species was detected which was attributed to CO bridge bonded to defect (low-coordinated) sites. On both surfaces, no indications of CO dissociation were found even after hours of 0.1 mbar CO exposure. However, exposing CO/H{sub 2} mixtures to ion-bombarded Pd(1 1 1) produced carbonaceous deposits suggesting CH{sub x}O species as precursors for C---O bond cleavage and that the formation of CH{sub x}O is facilitated by surface defects. The relevance of the observations for CO hydrogenation on Pd catalysts is discussed.

  3. Influence of ion bombardment on structural and electrical properties of SiO2 thin films deposited from O2/HMDSO inductively coupled plasmas under continuous wave and pulsed modes

    International Nuclear Information System (INIS)

    Bousquet, A.; Goullet, A.; Leteinturier, C.; Granier, A.; Coulon, N.

    2008-01-01

    Low pressure Plasma Enhanced Chemical Vapour Deposition is commonly used to deposit insulators on temperature sensitive substrates. In these processes, the ion bombardment experienced by films during its growth is known to have benefits but also some disadvantages on material properties. In the present paper, we investigate the influence of this bombardment on the structure and the electrical properties of SiO 2 -like film deposited from oxygen/hexa-methyl-di-siloxane radiofrequency plasma in continuous and pulsed modes. First, we studied the ion kinetics thanks to time-resolved measurements by Langmuir probe. After, we showed the ion bombardment in such plasma controls the OH bond content in deposited films. Finally, we highlight the impressive reduction of fixed charge and interface state densities in films obtained in pulsed mode due to a lower ion bombardment. (authors)

  4. Experimental and theoretical studies of bombardment induced surface morphology changes

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Williams, J.S.

    1980-01-01

    In this review results of experimental and theoretical studies of solid surface morphology changes due to ion bombardment are discussed. An attempt is undertaken to classify the observed specific features of a structure, generated by ion bombardment [ru

  5. Electronic excitation effects on secondary ion emission in highly charged ion-solid interaction

    International Nuclear Information System (INIS)

    Sekioka, T.; Terasawa, M.; Mitamura, T.; Stoeckli, M.P.; Lehnert, U.; Fehrenbach, C.

    2001-01-01

    In order to investigate the secondary ion emission from the surface of conductive materials bombarded by highly charged heavy ions, we have done two types of experiments. First, we have measured the yield of the sputtered ions from the surface of solid targets of conductive materials (Al, Si, Ni, Cu) bombarded by Xe q+ (q=15-44) at 300 keV (v p =0.30 a.u) and at 1.0 MeV (v p =0.54 a.u). In view of the secondary ion yields as a function of the potential energy of the projectile, the increase rates below q=35, where the potential energy amounts to 25.5 keV, were rather moderate and showed a prominent increase above q=35. These phenomena were rather strong in the case of the metal targets. Second, we have measured the energy dependence of the yield of the sputtered ions from the surface of solid targets of conductive materials (C, Al) bombarded by Xe q+ (q=30,36,44) between 76 keV (v p =0.15 a.u) and 6.0 MeV (v p =1.3 a.u). A broad enhancement of the secondary ion yield has been found for Al target bombarded by Xe 44+ . From these experimental results, the electronic excitation effects in conductive materials for impact of slow highly charged heavy ions bearing high potential energy is discussed

  6. L-subshell ionization studies in Au and Bi for 19F and 28Si large-ion bombardment

    International Nuclear Information System (INIS)

    Padhi, H.C.; Dhal, B.B.; Nanal, V.; Prasad, K.G.; Tandon, P.N.; Trautmann, D.

    1996-01-01

    L x-ray production and subshell ionization cross sections of Au and Bi have been measured for the bombardment of 19 F and 28 Si ions in the energy range 30 endash 57 MeV and 36 endash 84 MeV, respectively. Comparison of the Lα x-ray production cross sections of Au with the earlier data by Malhi and Gray [Phys. Rev. A 44, 7199 (1991)] shows reasonable agreement for 19 F impact and their data are consistently higher for 28 Si at all energies. The measured Lα line energy shows a shift towards higher energy, which appears to be proportional to the square of the projectile atomic number at all impact energies. This shift suggests the presence of multiple ionization in the L and M shells with a simultaneous production of four M holes in Au at the impact energy of 3 MeVu -1 of 28 Si. The L-subshell ionization cross sections obtained from the measured x-ray production cross sections have been compared with the semiclassical approximation and perturbed stationary state theory with energy loss, Coulomb deflection, and relativistic correction for the electron motion calculations, which show large deviations for the L 1 subshell. The L 2 - and L 3 -subshell ionization cross sections are underestimated by both the theories by a factor of 1.2 endash 4.0 for 28 Si impact whereas for the 19 F case there is reasonable agreement for the L 3 cross section but the L 2 cross section is underestimated by 20 endash 30%. copyright 1996 The American Physical Society

  7. Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment

    Science.gov (United States)

    Grodzicki, M.; Mazur, P.; Ciszewski, A.

    2018-05-01

    The p-GaN(0 0 0 1) crystal with a relatively low acceptor concentration of 5 × 1016 cm-3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). The p-GaN(0 0 0 1)-(1 × 1) surface is achieved by thermal cleaning. N+-ion bombardment by a 200 eV ion beam changes the surface stoichiometry, enriches it with nitrogen, and disorders it. Such modified surface layer inverts its semiconducting character from p- into n-type. The electron affinity for the already cleaned p-GaN surface and that just after bombardment shows a shift from 2.2 eV to 3.2 eV, as well as an increase of band bending at the vacuum/surface interface from 1.4 eV to 2.5 eV. Proper post-bombardment heating of the sample restores the initial atomic order of the modified layer, leaving its n-type semiconducting character unchanged. The results of the measurements are discussed based on two types of surface states concepts.

  8. Boron erosion and carbon deposition due to simultaneous bombardment with deuterium and carbon ions in plasmas

    International Nuclear Information System (INIS)

    Ohya, K.; Kawata, J.; Wienhold, P.; Karduck, P.; Rubel, M.; Seggern, J. von

    1999-01-01

    Erosion of boron out of a thin film exposed to deuterium edge plasmas and the simultaneous carbon deposition have been investigated in the tokamak TEXTOR-94 and simulated by means of a dynamic Monte Carlo code. The calculated results are compared with some observations (colorimetry, spectroscopy and AES) during and after the exposures. The implantation of carbon impurities strongly changes the effective boron sputtering yield of the film, which results into a lowering of the film erosion and a formation of thick carbon deposits. A strong decrease in the observed BII line emission around a surface location far from the plasma edge can be explained by a carbon deposition on the film. The calculated carbon depth profiles in the film, depending on the distance of the exposed surface from the plasma edge, are in reasonable agreement with measurements by AES after the exposures. Although simultaneous surface erosion and carbon deposition can be simulated, the calculated erosion rate is larger, by a factor of 2, than the observations by colorimetry at the early stage of the exposure

  9. Effect of ion implantation on thin hard coatings

    International Nuclear Information System (INIS)

    Auner, G.; Hsieh, Y.F.; Padmanabhan, K.R.; Chevallier, J.; Soerensen, G.

    1983-01-01

    The surface mechanical properties of thin hard coatings of carbides, nitrides and borides deposited by r.f. sputtering were improved after deposition by ion implantation. The thickness and the stoichiometry of the films were measured by Rutherford backscattering spectrometry and nuclear reaction analysis before and after ion bombardment. The post ion bombardment was achieved with heavy inert ions such as Kr + and Xe + with an energy sufficient to penetrate the film and to reach the substrate. Both the film adhesion and the microhardness were consistently improved. In order to achieve a more detailed understanding, Rb + and Ni + ions were also used as projectiles, and it was found that these ions were more effective than the inert gas ions. (Auth.)

  10. The effects of surface stripping ZnO nanorods with argon bombardment

    International Nuclear Information System (INIS)

    Barnett, Chris J; Kryvchenkova, Olga; Maffeis, Thierry G G; Cobley, Richard J; Smith, Nathan A; Kelleher, Liam

    2015-01-01

    ZnO nanorods are used in devices including field effects transistors, piezoelectric transducers, optoelectronics and gas sensors. However, for efficient and reproducible device operation and contact behaviour, surface contaminants must be removed or controlled. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanorods allowing intrinsic surface measurements through a cross section of the material. Photoluminescence finds that the defect distribution is higher at the near-surface, falling away in to the bulk. Contacts to the n-type defect-rich surface are near-Ohmic, whereas stripping away the surface layers allows more rectifying Schottky contacts to be formed. The ability to select the contact type to ZnO nanorods offers a new way to customize device behaviour. (paper)

  11. Distributions of neutron yields and doses around a water phantom bombarded with 290-MeV/nucleon and 430-MeV/nucleon carbon ions

    Energy Technology Data Exchange (ETDEWEB)

    Satoh, D., E-mail: satoh.daiki@jaea.go.jp [Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Kajimoto, T. [Hiroshima University, Kagamiyama, Higashi-Hiroshima-shi, Hiroshima 739-8527 (Japan); Shigyo, N.; Itashiki, Y.; Imabayashi, Y. [Kyushu University, Motooka, Nishi-ku, Fukuoka 819-0395 (Japan); Koba, Y.; Matsufuji, N. [National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Sanami, T. [High Energy Accelerator Research Organization, Oho-cho, Tsukuba-shi, Ibaraki 305-0801 (Japan); Nakao, N. [Shimizu Corporation, Etchujima, Koto-ku, Tokyo 135-8530 (Japan); Uozumi, Y. [Kyushu University, Motooka, Nishi-ku, Fukuoka 819-0395 (Japan)

    2016-11-15

    Double-differential neutron yields from a water phantom bombarded with 290-MeV/nucleon and 430-MeV/nucleon carbon ions were measured at emission angles of 15°, 30°, 45°, 60°, 75°, and 90°, and angular distributions of neutron yields and doses around the phantom were obtained. The experimental data were compared with results of the Monte-Carlo simulation code PHITS. The PHITS results showed good agreement with the measured data. On the basis of the PHITS simulation, we estimated the angular distributions of neutron yields and doses from 0° to 180° including thermal neutrons.

  12. Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

    International Nuclear Information System (INIS)

    Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

    1975-01-01

    Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

  13. Radiative Auger effect in ion-atom collisions

    International Nuclear Information System (INIS)

    Richard, P.; Oltjen, J.; Jamison, K.A.; Kauffman, R.L.; Woods, C.W.; Hall, J.M.

    1975-01-01

    The radiative Auger effect, RAE, is observed for Al and Si bombarded by 1-2MeV H + . This is the first observation of the RAE X-ray edge using ion excitation. The K-L 23 L 23 RAE edge energy and the relative intensity are in agreement with the previously reported electron and photon induced spectra. (Auth.)

  14. Nanoconstructive bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, J [VSW Ion Beam Systems, Warrington (UK)

    1990-06-01

    Ion beams with energies as low as a few eV can be used, in the very clean environment of an ultra-high vacuum system, to achieve the fine control for atomic-scale experiments. They are becoming widely used in nanotechnology. Recent advances in beam quality, overcoming the mutual repulsion of the ions, have meant that mass-analysed low energy ion beams have been developed around the world for a variety of applications in material science, and physics. The structure of such devices is outlined and possible future applications noted. (U.K.).

  15. Formation mechanism and yield of molecules ejected from ZnS, CdS, and FeS2 during ion bombardment

    International Nuclear Information System (INIS)

    Nikzad, S.; Calaway, W.F.; Pellin, M.J.; Young, C.E.; Gruen, D.M.; Tombrello, T.A.

    1994-01-01

    Neutral species ejected from single crystals of ZnS, CdS, and FeS 2 during ion bombardment by 3 keV Ar + were detected by laser post-ionization followed by time-of-flight mass spectrometry. While metal atoms (Fe, Zn, Cd) and S 2 were the dominant species observed, substantial amounts of S, FeS, Zn 2 , ZnS, Cd 2 , and CdS were also detected. The experimental results demonstrate that molecules represent a larger fraction of the sputtered yield than was previously believed from secondary ion mass spectrometry experiments. In addition, the data suggest that the molecules are not necessarily formed from adjacent atoms in the solid and that a modified form of the recombination model could provide a mechanism for their formation

  16. Heavy-ion induced desorption of a TiZrV coated vacuum chamber bombarded with 5 MeV/u Ar8+ beam at grazing incidence

    International Nuclear Information System (INIS)

    Hedlund, E.; Malyshev, O. B.; Westerberg, L.; Krasnov, A.; Semenov, A. S.; Leandersson, M.; Zajec, B.; Kollmus, H.; Bellachioma, M. C.; Bender, M.; Kraemer, A.; Reich-Sprenger, H.

    2009-01-01

    TiZrV nonevaporable getter (NEG) coated vacuum chambers is a new vacuum technology which is already used in many particle accelerators worldwide. This coating is also of interest for heavy-ion accelerator vacuum chambers. Heavy-ion desorption yields from an activated as well as a CO saturated NEG coated tube have been measured with 5 MeV/u Ar 8+ beam. The sticking probability of the NEG film was obtained by using the partial pressure ratios on two sides of the NEG coated tube. These ratios were compared to results of modeling of the experimental setup with test particle Monte Carlo and angular coefficient methods. The partial pressures inside the saturated NEG coated tube bombarded with heavy ions were up to 20 times larger than those inside the activated one. However, the partial pressure of methane remained the same. The value of the total desorption yield from the activated NEG coated tube is 2600 molecules/ion. The desorption yields after saturation for CH 4 , H 2 , and CO 2 were found to be very close to the yields measured after the activation, while CO increased by up to a factor of 5. The total desorption yield for the saturated tube is up to 7000 molecules/ion. The large value of the desorption yield of the activated NEG coated tube, an order of magnitude higher than the desorption yield from a stainless steel tube at normal incident angle, could be explained by the grazing incident angle

  17. Reducing Energy Degradation Due to Back-bombardment Effect with Modulated RF Input in S-band Thermionic RF Gun

    Science.gov (United States)

    Kii, Toshiteru; Nakai, Yoko; Fukui, Toshio; Zen, Heishun; Kusukame, Kohichi; Okawachi, Norihito; Nakano, Masatsugu; Masuda, Kai; Ohgaki, Hideaki; Yoshikawa, Kiyoshi; Yamazaki, Tetsuo

    2007-01-01

    Energy degradation due to back-bombardment effect is quite serious to produce high-brightness electron beam with long macro-pulse with thermionic rf gun. To avoid the back-bombardment problem, a laser photo cathode is used at many FEL facilities, but usually it costs high and not easy to operate. Thus we have studied long pulse operation of the rf gun with thermionic cathode, which is inexpensive and easy to operate compared to the photocathode rf gun. In this work, to reduce the energy degradation, we controlled input rf power amplitude by controlling pulse forming network of the power modulator for klystron. We have successfully increased the pulse duration up to 4 μs by increasing the rf power from 7.8 MW to 8.5 MW during the macro pulse.

  18. Ion emission in solids bombarded with Aun+ (n = 1 - 9) clusters accelerated within the 0.15 - 1.25 MeV energy range

    International Nuclear Information System (INIS)

    Wehbe, Nimer

    2006-06-01

    This experimental work is devoted to the study of the ion emission in solids at the impact of gold clusters of energies within 0.15 to 1.25 MeV range. The physics of ion-solid collisions and the theoretical models of sputtering of solids under ion bombardment are presented in the first chapter. The chapter no. 2 deals with the description of the experimental setup. The study of a gold target allowed to evidence the role of the size and energy of the clusters in determining the emission intensity and the mass distribution of the ions. The 4. chapter gives results from the study of cesium iodide in which the intense emission of CsI clusters could be investigated quantitatively due to multiplicity measurements. Finally, the chapter no. 5 was devoted to the study of a biologic molecule, the phenylalanine, and of a pesticide molecule, chlorosulfuron. This work evidenced the importance of clusters for surface analyses by mass spectrometry

  19. Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

    Science.gov (United States)

    Beainy, Georges; Cerba, Tiphaine; Bassani, Franck; Martin, Mickaël; Baron, Thierry; Barnes, Jean-Paul

    2018-05-01

    Time of flight secondary ion mass spectrometry (ToF-SIMS) is a well-adapted analytical method for the chemical characterization of concentration profiles in layered or multilayered materials. However, under ion beam bombardment, initially smooth material surface becomes morphologically unstable. This leads to abnormal secondary ion yields and depth profile distortions. In this contribution, we explore the surface topography and roughening evolution induced by O2+ ion bombardment on GaSb/InAs multilayers. We demonstrate the formation of nanodots and ripples patterning according to the ion beam energy. Since the latter are undesirable for ToF-SIMS analysis, we managed to totally stop their growth by using simultaneously sample rotation and oxygen flooding. This unprecedented coupling between these two latter mechanisms leads to a significant enhancement in depth profiles resolution.

  20. Heavy-ion induced desorption yields of amorphous carbon films bombarded with 4.2 MeV/u lead ions

    CERN Document Server

    Mahner, E; Küchler, D; Scrivens, R; Costa Pinto, P; Yin Vallgren, C; Bender, M

    2011-01-01

    During the past decade, intense experimental studies on the heavy-ion induced molecular desorption were performed in several particle accelerator laboratories worldwide in order to understand and overcome large dynamic pressure rises caused by lost beam ions. Different target materials and various coatings were studied for desorption and mitigation techniques were applied to heavy-ion accelerators. For the upgrade of the CERN injector complex, a coating of the Super Proton Synchrotron (SPS) vacuum system with a thin film of amorphous carbon is under study to mitigate the electron cloud effect observed during SPS operation with the nominal proton beam for the Large Hadron Collider (LHC). Since the SPS is also part of the heavy-ion injector chain for LHC, dynamic vacuum studies of amorphous carbon films are important to determine their ion induced desorption yields. At the CERN Heavy Ion Accelerator (LINAC 3), carbon-coated accelerator-type stainless steel vacuum chambers were tested for desorption using 4.2 Me...

  1. Ion energy/momentum effects during ion assisted growth of niobium nitride films

    Science.gov (United States)

    Klingenberg, Melissa L.

    The research described herein was performed to better understand and discern ion energy vs. ion momentum effects during ion beam assisted (IBAD) film growth and their effects on residual stress, crystalline structure, morphology, and composition, which influence film tribological properties. NbxN y was chosen for this research because it is a refractory material that can possess a large number of crystalline structures, and it has been found to have good tribological properties. To separate the effects of momentum transfer per arriving atom (p/a), which considers bombarding species mass, energy, and ion-to-atom transport ratio, from those of energy deposition per arriving atom (E/a), a mass independent parameter, different inert ion beams (krypton, argon, and neon) were used to create a matrix of coatings formed using similar energy deposition, but different momentum transfer and vice versa. Deposition was conducted in a research-scale IBAD system using electron beam evaporation, a radio frequency ion source, and a neutral nitrogen gas backfill. Films were characterized using x-ray diffraction, atomic force microscopy, Rutherford backscattering spectrometry, and residual stress analysis. Direct and quantifiable effects of bombardment were observed; however, energy deposition and momentum transfer effects could not be completely separated, confirming that thin film processes are complex. Complexities arose from ion-specific interactions (ion size, recoil energy, per cent reflected neutrals, Penning ionization, etc.) and chemistry effects that are not considered by the simple models. Overall, it can be stated that bombardment promoted nitride formation, nanocrystallinity, and compressive stress formation; influenced morphology (which influenced post-deposition oxygen uptake) and stress evolution; increased lattice parameter; modified crystalline phase and texture; and led to inert gas incorporation. High stress levels correlated strongly with material disorder and

  2. Doubly versus Singly Positively Charged Oxygen Ions Back-Scattering from a Silicon Surface under Dynamic O2+ Bombardment

    Czech Academy of Sciences Publication Activity Database

    Franzreb, K.; Williams, P.; Lörinčík, Jan; Šroubek, Zdeněk

    203-204, 1/4 (2003), s. 39-42 ISSN 0169-4332 Institutional research plan: CEZ:AV0Z2067918; CEZ:AV0Z4040901 Keywords : low-energy ion scattering * doubly charged ions * molecular orbital Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.284, year: 2003

  3. Secondary emission from a CuBe target due to bombardment with parent and fragment ions of ammonia and phosphine

    International Nuclear Information System (INIS)

    Maerk, T.D.

    1977-01-01

    The secondary electron emission of the first dynode of a CuBe alloy sixteen dynode electron multiplier has been studied in the course of electron impact ionization studies of ammonia and phosphine. Relative secondary electron emission coefficients have been obtained for the singly and doubly charged parent and fragment ions of ammonia, ammonia-d 3 , phosphine and phosphine-d 3 for kinetic energies of 5,25 and 10,5 keV. It has been found, that in general deuterated ions have smaller γ coefficients, that ammonia ions have larger γ coefficients than corresponding phosphine ions, and that the γ coefficients increase with the complexity of the ion under study. (Auth.)

  4. Disordering and amorphization of Zr3Al by 3.8 MeV Zr3+ ion bombardment

    International Nuclear Information System (INIS)

    Chen, F.C.; Ardell, A.J.

    1991-01-01

    The ordered intermetallic compound Zr 3 Al was irradiated with 3. 8 MeV Zr 3+ ions at various fluences up to 5 x 10 12 tons/mm 2 at a temperature of 250 degrees C and the irradiation- induced microstructures were investigated by transmission electron microscopy. Disordering began at the lowest dose, 0.0033 dpa, and complete loss of chemical long-range order occurred at a dose of 0.33 dpa. The onset of amorphization was also observed at this dose. Electron diffraction patterns from irradiated samples showed satellite reflections along in thin foils in [100] orientation and streaking along in foils oriented [011]. These diffraction effects are attributed to the presence of irradiation-induced microstructural defects that, when imaged in dark field, resemble rows of dislocation loops. A model of these arrays of loops, which are suggested to have Burgers vectors of the Frank type, is proposed. The model accounts for the contrast effects observed in the images and the streaking and satellites seen in the diffraction patterns. At the highest dose, 1.6 dpa, a new phase, Zr 5 Al 3 , appeared unexpectedly, most likely as a consequence of irradiation-induced solute segregation

  5. Secondary ion emission from cleaned surfaces bombarded by 100 MeV accelerator beams at the GSI Darmstadt

    International Nuclear Information System (INIS)

    Wien, K.; Becker, O.; Guthier, W.; Knippelberg, W.; Koczon, P.

    1988-01-01

    The 1.4 MeV/n beam facility for the UNILAC/GSI has been used to study secondary ion emission from surfaces cleaned under UHV conditions by ion etching or cleaving of crystals. The desorption phenomena observed by means of TOF mass spectrometry can be classified as follows: (1) Clean metal surfaces emit metal ions being ejected by atomic collisions cascades. Electronic excitation of surface states seems to support ionization. (2) The desorption of contaminants adsorbed at the metal surface is strongly correlated with the electronic energy loss of the projectiles - even, if the content of impurities is very low. (3) Ion formation at the epitaxial surface of fluoride crystals as CaF 2 , MgF 2 and NaF is initiated by the electronic excitation of the crystal. At high beam energies the mass spectrum is dominated by a series of cluster ions. These cluster ions disappear below a certain energy deposit threshold, whereas small atomic ions are observed over the whole energy range

  6. Net sputtering rate due to hot ions in a Ne-Xe discharge gas bombarding an MgO layer

    International Nuclear Information System (INIS)

    Ho, S.; Tamakoshi, T.; Ikeda, M.; Mikami, Y.; Suzuki, K.

    2011-01-01

    An analytical method is developed for determining net sputtering rate for an MgO layer under hot ions with low energy ( h i , above a threshold energy of sputtering, E th,i , multiplied by a yield coefficient. The threshold energy of sputtering is determined from dissociation energy required to remove an atom from MgO surface multiplied by an energy-transfer coefficient. The re-deposition rate of the sputtered atoms is calculated by a diffusion simulation using a hybridized probabilistic and analytical method. These calculation methods are combined to analyze the net sputtering rate. Maximum net sputtering rate due to the hot neon ions increases above the partial pressure of 4% xenon as E h Ne becomes higher and decreases near the partial pressure of 20% xenon as ion flux of neon decreases. The dependence due to the hot neon ions on partial pressure and applied voltage agrees well with experimental results, but the dependence due to the hot xenon ions deviates considerably. This result shows that the net sputtering rate is dominated by the hot neon ions. Maximum E h Ne (E h Ne,max = 5.3 - 10.3 eV) is lower than E th,Ne (19.5 eV) for the MgO layer; therefore, weak sputtering due to the hot neon ions takes place. One hot neon ion sputters each magnesium and each oxygen atom on the surface and distorts around a vacancy. The ratio of the maximum net sputtering rate is approximately determined by number of the ions at E h i,max multiplied by an exponential factor of -E th,i /E h i,max .

  7. Diffusion processes in bombardment-induced surface topography

    International Nuclear Information System (INIS)

    Robinson, R.S.

    1984-01-01

    The bombardment of surfaces with moderate energy ions can lead to the development of various micron-sized surface structures. These structures include ridges, ledges, flat planes, pits and cones. The causal phenomena in the production of these features are sputtering, ion reflection, redeposition of sputtered material, and surface diffusion of both impurity and target-atom species. The authors concentrate on the formation of ion bombardment-induced surface topography wherein surface diffusion is a dominant process. The most thoroughly understood aspect of this topography development is the generation of cone-like structures during sputtering. The formation of cones during sputtering has been attributed to three effects. These are: (1) the presence of asperities, defects, or micro-inclusions in the surface layers, (2) the presence of impurities on the surfaces, and (3) particular crystal orientations. (Auth.)

  8. Damage of niobium surfaces caused by bombardment with 4He+ ions of different energies typical for T-20

    International Nuclear Information System (INIS)

    Guseva, M.I.; Gusev, V.; Martynenko, Yu.V.; Das, S.K.; Kaminsky, N.

    1979-01-01

    The surface damage of cold worked and annealed polycrystalline Nb irradiated at room temperature with He + ions sequentially at different energies over the range from 0.5 keV to 1.8 MeV has been investigated. The individual energy and the dose of the He + ion was chosen to match the theoretically calculated He + ion spectrum expected in the Tokamak T-20. In one set of irradiations, targets were irradiated at Kurchatov Institute starting with 0.5 keV 4 He + ions and extending up to 90 keV in eleven steps. Subsequently, the same area was irradiated at ANL starting at 150 keV and increased in eight steps up to 1.8 MeV. The irradiations were carried out for a total dose of 5.0 C/cm 2 . In another set of irradiations the sequence was reversed. Scanning electron microscopy results show formation of blisters and exfoliation. For the same dose the broad energy implant (due to sequential irradiation) appears to decrease the blister diameter and density as compared to irradiation with monoenergetic He + ions at a given energy (in the energy range considered). Some estimates of surface erosion yields due to blistering are given

  9. Chemical and catalytic effects of ion implantation

    International Nuclear Information System (INIS)

    Wolf, G.K.

    1982-01-01

    Energetic particles are used for inducing chemical reactions as well as for modifying the properties of materials with regard to their bulk and surface chemical behavior. The effects are partly caused by radiation damage or phase intermixing, partly by the chemical properties of the individual bombarding particles. In this contribution a survey of relevant applications of these techniques is presented: (1) Chemical reactions of implanted and recoil atoms and their use for syntheses, doping and labeling of compounds. (2) The formation of thin films by decomposing chemical compounds with ion beams. 3) Catalytic effects on substrates treated by sputtering or ion implantation. Recent results with nonmetallic substrates are reviewed. Mainly hydrogenation reactions at a solid/gas interface or redox reactions at an electrified solid/liquid interface are mentioned. The present status and future prospects of these kinds of investigations will be discussed. (author)

  10. Role of Ion Bombardment, Film Thickness and Temperature of Annealing on PEC Activity of Very-thin Film Hematite .

    Czech Academy of Sciences Publication Activity Database

    Kment, Š.; Čada, M.; Hubička, Z.; Krýsa, J.; Kmentová, Hana; Olejníček, J.; Zlámalová Cílová, Z.; Zbořil, R.

    2016-01-01

    Roč. 41, č. 27 (2016), s. 11547-11557 ISSN 0360-3199. [International Conference on Hydrogen Energy /1./. Aveiro, 20.07.2015-22.07.2015] Institutional support: RVO:67985858 Keywords : ion flux density * hematite photoanode * thin films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.582, year: 2016

  11. The formation of giant planets and its effects on protoplanetary disks: the case of Jupiter and the Jovian Early Bombardment

    Science.gov (United States)

    Turrini, D.; ISSI Team "Vesta, the key to the origins of the Solar System"; EChO "Planetary Formation" Working Group

    The formation of giant planets is accompanied by a short but intense primordial bombardment \\citep{safronov69,weidenschilling75,weidenschilling01,turrini11}: the prototype for this class of events is the Jovian Early Bombardment (JEB) caused by the formation of Jupiter in the Solar System \\citep{turrini11,turrini12}. The JEB affected the collisional evolution of the minor bodies in the inner Solar System by inflicting mass loss to planetesimals \\citep{turrini12,turrini14a,turrini14b} due to cratering erosion and, at the same time, delivering water and volatile materials to the asteroid belt \\citep{turrini14b}. The JEB also resulted in a significant number of collisions between Jupiter and planetesimals formed over a wide orbital range, delivering volatile and refractory materials to the giant planet and its circumplanetary disk \\citep{turrini14c}. In this talk I'll discuss how the study of the effects of the JEB on Vesta can be used to constrain the early evolution of the Solar System \\citep{turrini14a,turrini14b} and how these constraints can, in turn, provide insight on the composition of Jupiter and of its satellites. Finally, I'll discuss the implications of the JEB model for extrasolar planets \\citep{turrini14c}.

  12. Neutron radiation field due to 6.6 MeV/amu 58Ni ions bombarding a thick Cu target

    International Nuclear Information System (INIS)

    Aleinikov, V.E.; Cherevatenko, A.P.; Clapier, F.B.; Tsovbun, V.I.

    1985-01-01

    The angular distribution of the dose equivalent rate and neutron spectra were obtained using the Bonner sphere spectrometry method. The quality factor was measured by a tissue-equivalent Rem-2 chamber at several angles. The agreement between the results of the measurements and an empirical parameterisation of the angular distribution is satisfactory. The total yield is estimated to be 1.6+-0.4x10 -3 neutrons per heavy ion. (author)

  13. A comparison of atom and ion induced SSIMS - evidence for a charge induced damage effect in insulator materials

    International Nuclear Information System (INIS)

    Brown, A.; Berg, J.A. van den; Vickerman, J.C.

    1985-01-01

    A static secondary ion mass spectrometry (SSIMS) study of two very low conductivity materials, polystyrene and niobium pentoxide, using on the one hand a primary ion beam with electron neutralisation, and on the other, atom bombardment, shows that whilst the initial spectra obtained were quite similar, subsequent damage effects were much greater under ion impact conditions. For an equivalent flux density the half-life of the polystyrene surface structure was four times longer under atom bombardment. Significant reduction of the niobium surface was observed under ion bombardment whereas an equivalent atom flux had little apparent effect on the surface oxidation state. These data suggest that the requirement to dissipate the charge delivered to the sample by the primary ion beam contributes significantly to the damage mechanisms in electrically insulating materials. (author)

  14. Effects of ion implantation on corrosion of zirconium and zirconium base alloys

    International Nuclear Information System (INIS)

    Zelenskij, V.F.; Petel'guzov, I.A.; Rekova, L.P.; Rodak, A.G.

    1989-01-01

    The influence of He and Ar ion bombardment on the corrosion of Zr and Zr-1%Nb and Zr-2.5%Nb alloys is investigated with the aims of finding the irradiation influence laws, obtaining the dependences of the effect of increasing the corrosiuon resistance on the type and dose of bombarding ions and of finding the conditions for the maximum effect. The prolonged corrosion test of specimens (3500 hours) have shown that the strongest effect is obtained for the irradiation with Ar ions up to the dose 1x10 16 ion/cm 2 . The kinetics of ion thermosorption after corrosion of irradiated materials is studied, the temperature threshold of implanted ion stability in zirconium and its alloys is found to be 400 deg C

  15. Damage of niobium surfaces caused by bombardment with 4He+ ions of different energies typical for T-20

    International Nuclear Information System (INIS)

    Guseva, M.I.; Gusev, V.; Martynenko, Yu.V.; Das, S.K.; Kaminsky, M.

    1979-01-01

    The aim of the present studies was to study surface damage due to blistering of both annealed and cold-worked niobium (a candidate first wall material for keV) irradiated sequentially with 4 He + ions with energies of 0.5 to 1800 keV for a total dose of 5.0 C/cm 2 . A typical surface of cold-worked Nb after irradiations with 4 He + ions with increasing energy from 0.5 to 90 keV is shown. The blister diameters range from 0.1 μm to 3 μm, and most of the blisters have exfoliated. The blisters fall into several size classes, the two most dominant ones having most probable blister diameters of approx. 0.27 μm and approx. 2.0 μm. The skin thickness of the larger blisters was measured to be approx. 0.23 μm. Also shown is the same area after irradiation with 150-1800-keV 4 He + irradiation for a dose of 0.66 C/cm 2 . A few additional blisters can be seen. A cold-worked Nb surface that was irradiated only with 150-1800-keV 4 He + ions is also shown. It is seen that prior irradiation with 0.5-90-keV 4 He + helped in significantly reducing blistering. For a total dose of 0.5 C/cm 2 , the erosion yield due to helium blistering of Nb ranges from (5.4 +- 2.0) x 10 -3 to (1.5 +- 0.7) x 10 -2 atoms/ion. For the cold-worked Nb target the results indicate clearly that the 4 He + implantations for the energy range from 0.5 to 90 keV help to reduce both the density and diameter of blisters formed by subsequent He-implantation for the energy ranging from 150 to 1800 keV. 2 figures

  16. Effect of substrate thickness on ejection of phenylalanine molecules adsorbed on free-standing graphene bombarded by 10 keV C{sub 60}

    Energy Technology Data Exchange (ETDEWEB)

    Golunski, M. [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Krakow (Poland); Verkhoturov, S.V.; Verkhoturov, D.S.; Schweikert, E.A. [Department of Chemistry, Texas A& M University, College Station, TX 77840 (United States); Postawa, Z., E-mail: zbigniew.postawa@uj.edu.pl [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Krakow (Poland)

    2017-02-15

    Highlights: • Substrate thickness has a prominent effect on the molecular ejection mechanism. • Collisions with projectile atoms leads to molecular ejection at thin substrates. • Interactions with deforming graphene sheet ejects molecules from thicker substrates. • Probability of fragmentation process decreases with the graphene substrate thickness. - Abstract: Molecular dynamics computer simulations have been employed to investigate the effect of substrate thickness on the ejection mechanism of phenylalanine molecules deposited on free-standing graphene. The system is bombarded from the graphene side by 10 keV C{sub 60} projectiles at normal incidence and the ejected particles are collected both in transmission and reflection directions. It has been found that the ejection mechanism depends on the substrate thickness. At thin substrates mostly organic fragments are ejected by direct collisions between projectile atoms and adsorbed molecules. At thicker substrates interaction between deforming topmost graphene sheet and adsorbed molecules becomes more important. As this process is gentle and directionally correlated, it leads predominantly to ejection of intact molecules. The implications of the results to a novel analytical approach in Secondary Ion Mass Spectrometry based on ultrathin free-standing graphene substrates and a transmission geometry are discussed.

  17. Effects of pulsed dual-ion irradiation of microstructural development

    International Nuclear Information System (INIS)

    Packan, N.H.

    1981-01-01

    The effect of pulsed irradiation on the development of microstructure during Ni ion bombardment has been investigated in a simple austenitic alloy similar to type 316 stainless steel. Bombardment conditions were 10 dpa, 940 K, pulsing with equal on/off times of either 0.5 or 60 s, and the addition of 20 appM He/dpa to some specimens either by room temperature preimplantation or by dual-beam coimplantation. Particular care was taken to minimize thermal pulses from beam heating (to 0 C). The results show that pulsing has a subtle influence, and the effects on specific cavity parameters are complex. Pulsing produced a small increase in swelling in the helium-free case, but a slight decrease for helium-implanted specimens, and it seems to have counteracted the usual stimulative effects of helium on cavity nucleation

  18. Experimental study of secondary ion emission from bombarded surfaces by heavy ions at nucleon energy between 0.1 and 5 MeV/u

    International Nuclear Information System (INIS)

    Lorthiois, I.

    1983-03-01

    A time of flight mass spectrometer associated with 252 Cf has been built in the laboratory and used to identify organic and biological molecules. A few number of examples is shown. The complex interaction processes between primary ions and several kinds of materials can be more easily studied by using heavy ions from an accelerator. The mass of the primary ions, its velocity and its state charge are known parameters wich can be varied in these experiments. The desorption yields have been measured simultaneously with other parameters (velocity of the primary ions, number of emitted electrons). The velocity dependance of the yield shows the existence of a maximum around 1 cm/ns and no direct correlations have been found between the yield curves and the electronic stopping power (dE/dx). Experimental results are presented for several types of primary ions (Cu, Kr, Ag) and of material deposits [fr

  19. Materials surface modification by plasma bombardment under simultaneous erosion and redeposition conditions

    International Nuclear Information System (INIS)

    Hirooka, Y.; Goebel, D.M.; Conn, R.W.

    1986-07-01

    The first in-depth investigation of surface modification of materials by continuous, high-flux argon plasma bombardment under simultaneous erosion and redeposition conditions have been carried out for copper and 304 stainless steel using the PISCES facility. The plasma bombardment conditions are: incident ion flux range from 10 17 to 10 19 ions sec -1 cm -2 , total ion fluence is controlled between 10 19 and 10 22 ions cm -2 , electron temperature range from 5 to 15 eV, and plasma density range from 10 11 to 10 13 cm -3 . The incident ion energy is 100 eV. The sample temperature is between 300 and 700K. Under redeposition dominated conditions, the material erosion rate due to the plasma bombardment is significantly smaller (by a factor up to 10) than that can be expected from the classical ion beam sputtering yield data. It is found that surface morphologies of redeposited materials strongly depend on the plasma bombardment condition. The effect of impurities on surface morphology is elucidated in detail. First-order modelings are implemented to interpret the reduced erosion rate and the surface evolution. Also, fusion related surface properties of redeposited materials such as hydrogen reemission and plasma driven permeation have been characterized

  20. Optical effects of ion implantation

    International Nuclear Information System (INIS)

    Townsend, P.D.

    1987-01-01

    The review concerns the effects of ion implantation that specifically relate to the optical properties of insulators. Topics which are reviewed include: ion implantation, ion range and damage distributions, colour centre production by ion implantation, high dose ion implantation, and applications for integrated optics. Numerous examples are presented of both diagnostic and industrial examples of ion implantation effects in insulators. (U.K.)

  1. Secondary ion emission from ultra-thin oxide layers bombarded by energetic (MeV) heavy ions: depth of origin and layer homogeneity

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Cabaud, B.; Fuchs, G.; Hoareau, A.; Treilleux, M.; Danel, J.S.

    1993-09-01

    The escape depth of the secondary ions resulting from electronic sputtering of fast heavy ions in inorganic thin films has been investigated. Chromium layers deposited onto SiO 2 substrate as well as SiO x layers deposited onto chromium substrate have been characterized by secondary ion emission mass spectrometry (SIMS) in combination with time-of-flight (TOF) mass analysis (also referred as HSF-SIMS). These crossed experiments lead to a value around 1 nm for SiO x layers and 0.5 nm for Cr layers. On the other hand, HSF-SIMS can be used to correlate the intensity of the secondary ion emission to the film coverage rate and (or) the morphology of particular films like those produced by Low Energy Cluster Beam Deposition (LECBD). Using Sb deposits, the non-linear relationship between ion emission and coverage is interpreted in terms of sputtering enhancement in the individual supported clusters. (author) 22 refs., 9 figs., 1 tab

  2. Energy dependence of Lα-to-Ll x-ray intensity ratios for Yb and Pb produced by heavy-ion bombardment

    International Nuclear Information System (INIS)

    Gray, T.J.

    1980-01-01

    Measurements of the incident-ion energy dependence of Lα-to-Ll x-ray intensity ratios are reported for protons incident at 0.40 to 2.20 MeV/amu on thin targets of Pb and for 4 He and C ions incident upon Yb. The data are compared to calculations of the Lα-to-Ll ratio which include the effects of alignment of the 2p/sub 3/2/ state of the target

  3. Damage and redistribution of impurities by ionic bombardment

    International Nuclear Information System (INIS)

    Tognetti, N.P.

    1982-01-01

    Some aspects of displacement collisions in solids bombarded with ions in the medium energy range have been studied using the backscattering and channelling techniques. The production of lattice damage and the spatial redistribution of atoms within the collision cascade were the two main effects considered and experimentally studied. A comprehensive study of disorder production in GaAs was carried out at 40 K for a variety of ions and ion energies, providing insight into the mechanisms of damage generation from both the macro and microscopic points of view. Experiments on thermal recovery of partially disordered substrates revealed that annealing occurs from approximately 100 K to 300 K. A direct procedure developed for the obtainment of damage profiles from backscattering-channelling measurements is described. The net spatial redistribution of displaced atoms, in combined impurity-matrix substrates was studied and compared with existing theories of ion beam mixing. The Ag-Si system was studied for a wide range of fluence of bombarding Ar + ions. Furthermore, the contribution of atomic mixing in the experimental observation of Ge implantation at high doses into Si is discussed. (M.E.L) [es

  4. Effect of a new matrix system for low-polar organic compounds in fast atom bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Takayama, Mitsuo; Fukai, Toshio; Nomura, Taro

    1988-01-01

    A new matrix system m-NBA-DTDE (1:1) for FABMS of low-polar compounds, such as cholesterol and stearic acid methyl ester, was prepared. The system, i.e., a 1:1 mixture of m-NBA (m-nitrobenzyl alcohol) to DTDE (2,2-dithiodiethanol or 2-hydroxyethyl disulfide), contributed to measuring the positive ion FAB mass spectra of above compounds and morusin permethyl ether, and it brought an effective result on the ion current lifetime and the reproducibility of their spectra. The positive ion FAB mass spectra of these low-polar compounds were compared with the corresponding positive ion EI and CI mass spectra. (author)

  5. Using MDECR-PECVD to study the impact of ion bombardment energy on microstructural properties of μc-Si:H thin film grown from an SiF{sub 4}/H{sub 2} chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junkang; Florea, Ileana; Bulkin, Pavel V.; Maurice, Jean-Luc; Johnson, Erik V. [LPICM, CNRS, Ecole Polytechnique, Universite Paris Saclay, 91128 Palaiseau (France)

    2016-12-15

    The matrix-distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition (MDECR-PECVD) technique has been shown to achieve high deposition rates for hydrogenated microcrystalline silicon (μc-Si:H) thin film. Due to the fact that plasma is sustained by a microwave discharge, by biasing the substrate holder with additional power supply, one can achieve independent control over the plasma density and the maximum ion bombardment energy (IBE). In this work, we present studies of the impact of IBE on the microstructural properties of the μc-Si:H film deposited by MDECR-PECVD. Insufficient ion bombardment is found to be responsible for the substantial presence of nano-porous regions within the material, resulting in significant post-deposition oxidation. Good agreement between transmission electron microscopy (TEM) Fresnel contrast analysis and the results of infrared absorption and hydrogen effusion measurements for the deposited films suggest that moderate IBE is of vital importance to achieve high quality μc-Si:H. In doing so, denser films with significantly decreased nano-porous regions and better stability are obtained, which is of great interest to optimize the process parameters for solar cell applications. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Effects of particle size, helium gas pressure and microparticle dose on the plasma concentration of indomethacin after bombardment of indomethacin-loaded poly-L-lactic acid microspheres using a Helios gun system.

    Science.gov (United States)

    Uchida, Masaki; Natsume, Hideshi; Kobayashi, Daisuke; Sugibayashi, Kenji; Morimoto, Yasunori

    2002-05-01

    We investigated the effects of the particle size of indomethacin-loaded poly-L-lactic acid microspheres (IDM-loaded PLA MS), the helium pressure used to accelerate the particles, and the bombardment dose of PLA MS on the plasma concentration of IDM after bombarding with IDM-loaded PLA MS of different particle size ranges, 20-38, 44-53 and 75-100 microm, the abdomen of hairless rats using the Helios gene gun system (Helios gun system). Using larger particles and a higher helium pressure, produced an increase in the plasma IDM concentration and the area under the plasma concentration-time curve (AUC) and resultant F (relative bioavailability with respect to intracutaneous injection) of IDM increased by an amount depending on the particle size and helium pressure. Although a reduction in the bombardment dose led to a decrease in C(max) and AUC, F increased on decreasing the bombardment dose. In addition, a more efficient F was obtained after bombarding with IDM-loaded PLA MS of 75-100 microm in diameter at each low dose in different sites of the abdomen compared with that after bolus bombardment with a high dose (dose equivalent). These results suggest that the bombardment injection of drug-loaded microspheres by the Helios gun system is a very useful tool for delivering a variety of drugs in powder form into the skin and systemic circulation.

  7. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  8. Effect of ion irradiation on structural and electrical properties of BSCC thin films

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Kim, Sang Sub; Moon, Jong Ha

    2003-01-01

    Effects of oxygen ion irradiation and subsequent thermal annealing of Bi 2 Sr 2 Ca 1 Cu 2 O x (Bi-2212) films deposited on SrTiO 3 (001) using pulsed laser deposition were studied. It was found that compared to the simply heated film the ion irradiated and thermally annealed one showed a leaf-like morphology and an improved conducting behavior of Bi-2212 phase. Our results suggest that amorphization by oxygen ion bombardment and recrystallization by thermal annealing might be a suitable process for the preparation of patterned c-axis oriented Bi-2212 films with appropriate superconducting properties. (author)

  9. Carbon and tungsten effect on characteristics of sputtered and re-deposited beryllium target layers under deuteron bombardment

    International Nuclear Information System (INIS)

    Danelyan, L.S.; Gureev, V.M.; Elistratov, N.G.

    2004-01-01

    The behavior of the plasma facing Be-elements in the International Thermonuclear Experimental Reactor ITER will be affected by the re-deposition of other eroded plasma facing materials. The effect of carbon- and tungsten-additions on the microstructure, chemical composition and hydrogen isotope accumulation in the sputtered and re-deposited layers of beryllium TGP-56 at its interaction with 200 - 300 eV hydrogen isotope ions was studied in the MAGRAS facility equipped with a magnetron sputtering system. (author)

  10. Anomalous behavior in temporal evolution of ripple wavelength under medium energy Ar{sup +}-ion bombardment on Si: A case of initial wavelength selection

    Energy Technology Data Exchange (ETDEWEB)

    Garg, Sandeep Kumar [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India); Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Cuerno, Rodolfo [Departamento de Matematicas and Grupo Interdisciplinar de Sistemas Complejos (GISC), Universidad Carlos III de Madrid, 28911 Leganes (Spain); Kanjilal, Dinakar [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Som, Tapobrata, E-mail: tsom@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)

    2016-06-14

    We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1–3 × 10{sup 18} ions cm{sup −2}, as induced by medium energy Ar{sup +}-ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of pattern formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.

  11. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    Energy Technology Data Exchange (ETDEWEB)

    Siekhaus, W. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Teslich, N. E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Weber, P. K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

  12. Hydrogen pumping and release by graphite under high flux plasma bombardment

    International Nuclear Information System (INIS)

    Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Nygren, R.; Wilson, K.L.

    1988-01-01

    Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ≅ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 0 C. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 0 C and at a plasma bombarding energy of 300 eV. The graphite temperature was varied between 15 and 480 0 C. Due to the plasma particle pumping capability, hydrogen recycling from the activated graphite surface is significantly reduced, relative to that from a pre-saturated surface. A pre-saturated surface was also observed to reproducibly pump a hydrogen plasma to a concentration of 9.5 x 10 17 H/cm 2 . The hydrogen retention capacity of graphite is found to decrease with increasing temperature. A transient pumping mechanism associated with the sponge-like surface morphology is conjectured to explain the large hydrogen retention capacity. Hydrogen release behavior under helium and argon plasma bombardment was also investigated, and the result indicated the possibility of some in-pore retrapping effect. 43 refs., 11 figs

  13. Heavy-ion targets

    International Nuclear Information System (INIS)

    Adair, H.L.; Kobisk, E.H.

    1985-01-01

    This chapter examines the characteristics of targets required in heavy-ion accelerator physics experiments. The effects of target parameters on heavy-ion experimental results are reviewed. The target fabrication and characterization techniques used to minimize experimental problems during heavy-ion bombardment are described. Topics considered include target thickness and uniformity, target lifetime, target purity, substrate materials, Doppler shift effects, metal preparations, and target preparation methods

  14. MD and BCA simulations of He and H bombardment of fuzz in bcc elements

    Science.gov (United States)

    Klaver, T. P. C.; Zhang, S.; Nordlund, K.

    2017-08-01

    We present results of MD simulations of low energy He ion bombardment of low density fuzz in bcc elements. He ions can penetrate several micrometers into sparse fuzz, which allows for a sufficient He flux through it to grow the fuzz further. He kinetic energy falls off exponentially with penetration depth. A BCA code was used to carry out the same ion bombardment on the same fuzz structures as in MD simulations, but with simpler, 10 million times faster calculations. Despite the poor theoretical basis of the BCA at low ion energies, and the use of somewhat different potentials in MD and BCA calculations, the ion penetration depths predicted by BCA are only ∼12% less than those predicted by MD. The MD-BCA differences are highly systematic and trends in the results of the two methods are very similar. We have carried out more than 200 BCA calculation runs of ion bombardment of fuzz, in which parameters in the ion bombardment process were varied. For most parameters, the results show that the ion bombardment process is quite generic. The ion species (He or H), ion mass, fuzz element (W, Ta, Mo, Fe) and fuzz element lattice parameter turned out to have a modest influence on ion penetration depths at most. An off-normal angle of incidence strongly reduces the ion penetration depth. Increasing the ion energy increases the ion penetration, but the rate by which ion energy drops off at high ion energies follows the same exponential pattern as at lower energies.

  15. Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes

    Science.gov (United States)

    Alvi, Naveed Ul Hassan; Hussain, Sajjad; Jensen, Jen; Nur, Omer; Willander, Magnus

    2011-12-01

    Light-emitting diodes (LEDs) based on zinc oxide (ZnO) nanorods grown by vapor-liquid-solid catalytic growth method were irradiated with 2-MeV helium (He+) ions. The fabricated LEDs were irradiated with fluencies of approximately 2 × 1013 ions/cm2 and approximately 4 × 1013 ions/cm2. Scanning electron microscopy images showed that the morphology of the irradiated samples is not changed. The as-grown and He+-irradiated LEDs showed rectifying behavior with the same I-V characteristics. Photoluminescence (PL) measurements showed that there is a blue shift of approximately 0.0347 and 0.082 eV in the near-band emission (free exciton) and green emission of the irradiated ZnO nanorods, respectively. It was also observed that the PL intensity of the near-band emission was decreased after irradiation of the samples. The electroluminescence (EL) measurements of the fabricated LEDs showed that there is a blue shift of 0.125 eV in the broad green emission after irradiation and the EL intensity of violet emission approximately centered at 398 nm nearly disappeared after irradiations. The color-rendering properties show a small decrease in the color-rendering indices of 3% after 2 MeV He+ ions irradiation.

  16. Tribological properties of nc-TiC/a-C:H coatings prepared by magnetron sputtering at low and high ion bombardment of the growing film

    Czech Academy of Sciences Publication Activity Database

    Souček, P.; Schmidtová, T.; Bursíková, V.; Vašina, P.; Pei, Y.; De Hos, J. Th. M.; Caha, O.; Peřina, Vratislav; Mikšová, Romana; Malinský, Petr

    2014-01-01

    Roč. 241, FEB (2014), s. 64-73 ISSN 0257-8972 R&D Projects: GA MŠk(XE) LM2011019; GA ČR(CZ) GD104/09/H080 Institutional support: RVO:61389005 Keywords : nanocomposites * magnetron sputtering * Titanium carbide * ion flux * friction * wear Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.998, year: 2014

  17. Nucleation and growth of defects in heavy-ion and electron-bombarded metals. Final report for the period ending February 29, 1980

    International Nuclear Information System (INIS)

    Kulcinski, G.L.

    1983-04-01

    He preinjection was found to be essential in nucleating voids in high-purity Al. Interstitial pickup in high-purity V was found to be important even under good vacuum (10 - 6 to 10 - 7 torr). Voids were found to form in V down to 200 0 C. A model was tested against rdiation disordering/ordering in Cu 3 Au. Disordering in CuPd was studied. A small negative heavy ion source (SNICS) was developed for the tandem accelerator

  18. The effects of heavy meteorite bombardment on the early evolution — The emergence of the three Domains of life

    Science.gov (United States)

    Gogarten-Boekels, Maria; Hilario, Elena; Gogarten, J. Peter

    1995-06-01

    A characteristic of many molecular phylogenies is that the three domains of life (Bacteria, Archaea, Eucarya) are clearly separated from each other. The analyses of ancient duplicated genes suggest that the last common ancestor of all presently known life forms already had been a sophisticated cellular prokaryote. These findings are in conflict with theories that have been proposed to explain the absence of deep branching lineages. In this paper we propose an alternative scenario, namely, a large meteorite impact that wiped out almost all life forms present on the early Earth. Following this nearly complete frustation of life on Earth, two surviving extreme thermophilic species gave rise to the now existing major groups of living organisms, the Bacteria and Archaea. [The latter also contributed the major portion to the nucleo-cytoplasmic component of the Eucarya]. An exact calibration of the molecular record with regard to time is not yet possible. The emergence of Eucarya in fossil and molecular records suggests that the proposed late impact should have occurred before 2100 million years before present (BP). If the 3500 million year old microfossils [Schopf, J. W. 1993: Science 260: 640 646] are interpreted as representatives of present day existing groups of bacteria (i.e., as cyanobacteria), then the impact is dated to around 3700 million years BP. The analysis of molecular sequences suggests that the separation between the Eucarya and the two prokaryotic domains is less deep then the separation between Bacteria and Archaea. The fundamental cell biological differences between Archaea and Eucarya were obtained over a comparatively short evolutionary distance (as measured in number of substitution events in biological macromolecules). Our interpretation of the molecular record suggests that life emerged early in Earth's history even before the time of the heavy bombardment was over. Early life forms already had colonized extreme habitats which allowed at least two

  19. Nonlinear effects in interactions of swift ions with solids

    International Nuclear Information System (INIS)

    Crawford, O.H.; Dorado, J.J.; Flores, F.

    1994-01-01

    The passage of a swift charged particle through a solid gives rise to a wake of induced electron density behind the particle. It is calculated for a proton penetrating an electron gas having the density of the valence electrons in gold, assuming linear response of the medium. The induced potential associated with the wake is responsible for the energy loss of the particle, and for many effects that have captured recent interest. These include, among others, vicinage effects on swift ion clusters, emission of electrons from bombarded solids, forces on swift ions near a surface, and energy shifts in electronic states of channeled ions. Furthermore, the wake has a determining influence on the spatial distribution, and character, of energy deposition in the medium. Previous theoretical studies of these phenomena have employed a linear wake, i.e., one that is proportional to the charge of the projectile, eZ. However, in most experiments that measure these effects, the conditions are such that the wake must include higher-order terms in Z. The purpose of this study is to analyze the nonlinear wake, to understand how the linear results must be revised

  20. Diffusion processes in bombardment-induced surface topography

    International Nuclear Information System (INIS)

    Robinson, R.S.

    1984-01-01

    A treatment is given of the problem of surface diffusion processes occurring during surface topography development, whenever a surface is simultaneously seeded with impurities and ion bombarded. The development of controllable topography and the importance of surface diffusion parameters, which can be obtained during these studies, are also analyzed. 101 refs.; 7 figs.; 2 tabs

  1. Advances in fast-atom-bombardment mass spectroscopy

    International Nuclear Information System (INIS)

    Hemling, M.E.

    1986-01-01

    A comparison of fast atom bombardment and field desorption mass spectrometry was made to determine relative sensitivity and applicability. A series of glycosphingolipids and a series of protected oligonucleotides of known structure were analyzed to ascertain the potential utility of fast atom bombardment mass spectrometry in the structural elucidation of novel compounds in these classes. Negative ion mass markers were also developed. Fast atom bombardment was found to be one-to-two orders of magnitude more sensitive than field desorption based on the analysis of a limited number of compounds from several classes. Superior sensitivity was not universal and field desorption was clearly better in certain cases. In the negative ion mode in particular, fast atom bombardment was found to be a useful tool for the determination of the primary structure of glycosphingolipids and oligonucleotides. Carbohydrate sequence and branching information, and a fatty acid and lipid base composition were readily obtained from the mass spectra of glycosphingolipids while bidirectional nucleotide sequence, nucleotide base, and protecting group assignments were obtained for oligonucleotides. Based on this knowledge, a tentative structure of a human peripheral nervous system glycosphingolipid implicated in certain cases of disorders such as amyotrophic lateral sclerosis, Lou Gehrig's Disease, was proposed. Suitable negative ion mass markers were found in dispersions of poly(ethylene) and poly(propylene)glycols in a triethylenetetramine matrix, a matrix which also proved useful in the analysis of glycosphingolipids. These polyglycol dispersions provided ions for calibration to 2300 daltons

  2. Fast atom bombardment mass spectrometry of condensed tannin sulfonate derivatives

    Science.gov (United States)

    J.J. Karchesy; L.Y. Foo; Richard W. Hemingway; E. Barofsky; D.F. Barofsky

    1989-01-01

    Condensed tannin sulfonate derivatives were studied by fast atom bombardment mass spectrometry (FAB-MS) to assess the feasibility of using this technique for determining molecular weight and structural information about these compounds. Both positive- and negative-ion spectra provided useful data with regard to molecular weight, cation species present, and presence of...

  3. The repetitive flaking of Inconel 625 by 100 keV helium bombardment

    International Nuclear Information System (INIS)

    Whitton, J.L.; Chen, H.M.; Littmark, U.

    1981-01-01

    Repetitive flaking of Inconel 625 occurs with ion bombardment doses of > than 10 18 100 keV helium ions cm -2 , with up to 39 exfoliations being observed after bombardment with 3 x 10 19 ions cm -2 . The thickness of the flakes, measured by scanning electron microscopy, is some 30% greater than when measured by Rutherford backscattering (RBS) of 1.8 MeV helium ions. These RBS measurements compare well with the thickness of the remaining layers in the resultant craters and to the most probable range of the 100 keV helium. The area of the flakes is dictated by the grain boundaries, and when one flake is ejected, the adjacent grains are prevented from doing so since there now exists an escape route for the injected helium. A strong dose rate dependence is observed; decreasing the beam current from 640 μA cm -2 to 64 μA cm -2 results in a factor 20 fewer flakes being exfoliated (for the same total dose of 3 x 10 19 ions cm -2 ). Successive flakes decrease in area, suggesting that eventually a cratered, but stable, surface will result with the only erosion being by the much less effective mechanism of sputtering. (orig.)

  4. Process heat exchanger for SO3 decomposer fabricated with Ni-based alloys surface modified by SiC film deposition and N ion beam bombardment

    International Nuclear Information System (INIS)

    Park, Jae-Won; Kim, Hyung-Jin; Choi, Yong-Woon; Kim, Yong-Wan

    2007-01-01

    In the iodine-sulfur (IS) cycle for the hydrogen production using the high temperature gas-cooled reactor (HTGR), one of the important components is the SO 3 decomposer which generates SO 2 and SO 3 gases under high temperature conditions. Since this environment is extremely corrosive, the materials used for the decomposer should meet excellent mechanical properties at the elevated temperature as well as high corrosion resistance in SO 2 /SO 3 atmospheres. In general, ceramics are protective against the corrosion, but metals exhibit limited corrosion resistance. In this work, the ceramic coating on the metallic substrate was studied. We selected SiC as coating materials and Ni-based alloys as the substrate materials. Since the adhesion between the coated layer and the substrate is most crucial in this application, we attempted to develop Ion Beam Mixing (IBM) technique to produce a highly adherent coated layer. For the fabrication of process heat exchange for SO 3 decomposer, the diffusion bonding at ∼900 .deg. C is employed because this temperature does not affect the mechanical properties of materials

  5. Diagnosis by proton bombardment

    International Nuclear Information System (INIS)

    Steward, V.W.; Koehler, A.M.

    1976-01-01

    Beams of monoenergetic protons or other charged ions are passed through the living human body to detect abnormalities and obstructions in body tissue, which abnormalities and obstructions are visualized as density variations in the particle image emerging from the body part under investigation. The particles used are preferably protons having an energy of 100 to 300 MeV, more especially 200 to 300 MeV. The method is of use in detecting inter alia tumors, blood clots, infarcts, soft tissue lesions and multiple sclerosis in patients without exposure to high radiation dosages. 6 claims, 2 drawing figures

  6. Passivation of the surfaces of single crystal gadolinium molybdate (Gd2(MoO4)3) against attack by hydrofluoric acid by inert ion beam irradiation

    International Nuclear Information System (INIS)

    Bhalla, A.; Cross, L.E.; Tongson, L.

    1978-01-01

    The passivation effect from inert ion beam bombardment has been studied on a ferroelectric surface. The mechanism in these materials may have some additional contributions because of the polarization charges of the domains and the dipole effect (ion beam and surface species) on the surfaces. For these studies Gd 2 (MoO 4 ) 3 (GMO) crystals were selected. Two possible mechanisms of passivation of GMO surfaces when bombarded with ion beams are discussed

  7. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  8. A thermal extrapolation method for the effective temperatures and internal energies of activated ions

    Science.gov (United States)

    Meot-Ner (Mautner), Michael; Somogyi, Árpád

    2007-11-01

    The internal energies of dissociating ions, activated chemically or collisionally, can be estimated using the kinetics of thermal dissociation. The thermal Arrhenius parameters can be combined with the observed dissociation rate of the activated ions using kdiss = Athermalexp(-Ea,thermal/RTeff). This Arrhenius-type relation yields the effective temperature, Teff, at which the ions would dissociate thermally at the same rate, or yield the same product distributions, as the activated ions. In turn, Teff is used to calculate the internal energy of the ions and the energy deposited by the activation process. The method yields an energy deposition efficiency of 10% for a chemical ionization proton transfer reaction and 8-26% for the surface collisions of various peptide ions. Internal energies of ions activated by chemical ionization or by gas phase collisions, and of ions produced by desorption methods such as fast atom bombardment, can be also evaluated. Thermal extrapolation is especially useful for ion-molecule reaction products and for biological ions, where other methods to evaluate internal energies are laborious or unavailable.

  9. Gene Gun Bombardment with DNA-Coated Golden Particles Enhanced the Protective Effect of a DNA Vaccine Based on Thioredoxin Glutathione Reductase of Schistosoma japonicum

    Directory of Open Access Journals (Sweden)

    Yan Cao

    2013-01-01

    Full Text Available Schistosomiasis, caused by infection with Schistosoma species, remains an important parasitic zoonosis. Thioredoxin glutathione reductase of Schistosoma japonicum (SjTGR plays an important role in the development of the parasite and for its survival. Here we present a recombinant plasmid DNA vaccine, pVAX1/SjTGR, to estimate its protection against S. japonicum in BALB/c mice. The DNA vaccine administrated by particle bombardment induced higher protection than by intramuscular injection. All animals vaccinated with pVAX1/SjTGR developed significant specific anti-SjTGR antibodies than control groups. Moreover, animals immunized by gene gun exhibited a splenocyte proliferative response, with an increase in IFN-γ and IL-4. The recombinant plasmid administrated by gene gun achieved a medium protective efficacy of 27.83–38.83% ( of worm reduction and 40.38–44.51% ( of liver egg count reduction. It suggests that different modes of administering a DNA vaccine can influence the protective efficacy induced by the vaccine. Interestingly, from the enzymatic activity results, we found that worms obtained from pVAX1/SjTGR-vaccinated animals expressed lower enzymatic activity than the control group and the antibodies weakened the enzymatic activity of SjTGR in vitro, too. It implies that the high-level antibodies may contribute to the protective effects.

  10. Effects of incident cluster size, substrate temperature, and incident energy on bombardment of Ni clusters onto Cu (0 0 1) surface studied using molecular dynamics simulation

    International Nuclear Information System (INIS)

    Lin, Shiang-Jiun; Wu, Cheng-Da; Fang, Te-Hua; Chen, Guan-Hung

    2012-01-01

    The bombardment process of a Ni cluster onto a Cu (0 0 1) surface is studied using molecular dynamics (MD) simulations based on the tight-binding second-moment approximation (TB-SMA) many-body potential. The effects of incident cluster size, substrate temperature, and incident energy are evaluated in terms of molecular trajectories, kinetic energy, stress, self-diffusion coefficient, and sputtering yield. The simulation results clearly show that the penetration depth and Cu surface damage increase with increasing incident cluster size for a given incident energy per atom. The self-diffusion coefficient and the penetration depth of a cluster significantly increase with increasing substrate temperature. An incident cluster can be scattered into molecules or atoms that become embedded in the surface after incidence. When the incident energy is increased, the number of volcano-like defects and the penetration depth increase. A high sputtering yield can be obtained by increasing the incident energy at high temperature. The sputtering yield significantly increases with cluster size when the incident energy is above 5 eV/atom.

  11. Study of the secondary electron emission during bombardment of metal targets by positive D{sup +} and D{sub 2}{sup +} ions (1960); Etude de l'emission secondaire d'electrons au cours du bombardement de cibles metalliques par des ions positifs D{sup +} et D{sub 2}{sup +} (1960)

    Energy Technology Data Exchange (ETDEWEB)

    Leroy, J [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires; Prelec, K [Institut Rudjer Boskovic, Zagreb (Croatia)

    1960-07-01

    The secondary electron yield {gamma}-bar due to primary positive ions D{sup +} and D{sup +}{sub 2} has been measured in the 70 keV to 300 keV ion energy range. Several metallic targets have been used. The variation of this yield with the angle of incidence is proportional to sec {theta} where {theta} is the angle between the beam of primary ions and the normal to the target surface. The values {gamma}-bar decrease for increasing energy ions. At a given energy all the targets tried gave approximately the same electron yield. (author) [French] Le facteur d'emission secondaire a ete mesure pour des ions positifs D{sup +} et D{sup +}{sub 2} ayant une energie comprise entre 70 keV et 300 keV, sur differentes cibles metalliques. La variation de ce facteur avec l'angle d'incidence suit une loi de la forme {gamma}{sub 0} sec {theta}, {theta} etant l'angle entre le faisceau et la normale a la cible. Les valeurs de {gamma}-bar trouvees decroissent lorsque l'energie des ions incidents augmente, mais sont assez voisines les unes des autres, a une energie donnee, pour les differentes cibles essayees. (auteur)

  12. Miniature electron bombardment evaporation source: evaporation rate measurement

    International Nuclear Information System (INIS)

    Nehasil, V.; Masek, K.; Matolin, V.; Moreau, O.

    1997-01-01

    Miniature electron beam evaporation sources which operate on the principle of vaporization of source material, in the form of a tip, by electron bombardment are produced by several companies specialized in UHV equipment. These sources are used primarily for materials that are normally difficult to deposit due to their high evaporation temperature. They are appropriate for special applications such as heteroepitaxial thin film growth requiring a very low and well controlled deposition rate. A simple and easily applicable method of evaporation rate control is proposed. The method is based on the measurement of ion current produced by electron bombardment of evaporated atoms. The absolute evaporation flux values were measured by means of the Bayard-Alpert ion gauge, which enabled the ion current vs evaporation flux calibration curves to be plotted. (author). 1 tab., 4 figs., 6 refs

  13. Development of a double plasma gun device for investigation of effects of vapor shielding on erosion of PFC materials under ELM-like pulsed plasma bombardment

    Science.gov (United States)

    Sakuma, I.; Iwamoto, D.; Kitagawa, Y.; Kikuchi, Y.; Fukumoto, N.; Nagata, M.

    2012-10-01

    It is considered that thermal transient events such as type I edge localized modes (ELMs) could limit the lifetime of plasma-facing components (PFCs) in ITER. We have investigated surface damage of tungsten (W) materials under transient heat and particle loads by using a magnetized coaxial plasma gun (MCPG) device at University of Hyogo. The capacitor bank energy for the plasma discharge is 144 kJ (2.88 mF, 10 kVmax). Surface melting of a W material was clearly observed at the energy density of ˜2 MJ/m2. It is known that surface melting and evaporation during a transient heat load could generate a vapor cloud layer in front of the target material [1]. Then, the subsequent erosion could be reduced by the vapor shielding effect. In this study, we introduce a new experiment using two MCPG devices (MCPG-1, 2) to understand vapor shielding effects of a W surface under ELM-like pulsed plasma bombardment. The capacitor bank energy of MCPG-2 is almost same as that of MCPG-1. The second plasmoid is applied with a variable delay time after the plasmoid produced by MCPG-1. Then, a vapor cloud layer could shield the second plasma load. To verify the vapor shielding effects, surface damage of a W material is investigated by changing the delay time. In the conference, the preliminary experimental results will be shown.[4pt] [1] A. Hassanein et al., J. Nucl. Mater. 390-391, pp. 777-780 (2009).

  14. Deuterium pumping and erosion behavior of selected graphite materials under high flux plasma bombardment in PISCES

    International Nuclear Information System (INIS)

    Hirooka, Y.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Lehmer, R.; Leung, W.K.; Nygren, R.E.; Ra, Y.

    1988-06-01

    Deuterium plasma recycling and chemical erosion behavior of selected graphite materials have been investigated using the PISCES-A facility. These materials include: Pyro-graphite; 2D-graphite weave; 4D-graphite weave; and POCO-graphite. Deuterium plasma bombardment conditions are: fluxes around 7 /times/ 10 17 ions s/sup /minus/1/cm/sup /minus/2/; exposure time in the range from 10 to 100 s; bombarding energy of 300 eV; and graphite temperatures between 20 and 120/degree/C. To reduce deuterium plasma recycling, several approaches have been investigated. Erosion due to high-fluence helium plasma conditioning significantly increases the surface porosity of POCO-graphite and 4D-graphite weave whereas little change for 2D-graphite weave and Pyro-graphite. The increased pore openings and refreshed in-pore surface sites are found to reduce the deuterium plasma recycling and chemical erosion rates at transient stages. The steady state recycling rates for these graphite materials can be also correlated to the surface porosity. Surface topographical modification by machined-grooves noticeably reduces the steady state deuterium recycling rate and the impurity emission from the surface. These surface topography effects are attributed to co-deposition of remitted deuterium, chemically sputtered hydrocarbon and physically sputtered carbon under deuterium plasma bombardment. The co-deposited film is found to have a characteristic surface morphology with dendritic microstructures. 18 ref., 4 figs., 1 tab

  15. The effect of work function changes on secondary ion energy spectra

    International Nuclear Information System (INIS)

    Wittmaack, K.

    1983-01-01

    The effect of work function changes on experimental secondary ion energy spectra is discussed. In agreement with theory the measured ion intensities frequently exhibit an exponential work function dependence. However, the predicted velocity dependence is only observed at fairly high secondary ion energies. In the absence of a velocity dependence of the degree of ionization measured shifts of energy spectra reflect work function changes directly. Various instrumental problems are shown to aggravate a detailed comparison between experiment and theory. Significant artefacts must be expected if the extraction field is of the order of or less than the lateral field induced by a work function difference between the bombarded spot and the surrounding sample surface. (Auth.)

  16. Passivation of the surfaces of single crystal gadolinium molybdate (Gd/sub 2/(MoO/sub 4/)/sub 3/) against attack by hydrofluoric acid by inert ion beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bhalla, A; Cross, L E; Tongson, L [Pennsylvania State Univ., University Park (USA). Materials Research Lab.

    1978-01-01

    The passivation effect from inert ion beam bombardment has been studied on a ferroelectric surface. The mechanism in these materials may have some additional contributions because of the polarization charges of the domains and the dipole effect (ion beam and surface species) on the surfaces. For these studies Gd/sub 2/(MoO/sub 4/)/sub 3/ (GMO) crystals were selected. Two possible mechanisms of passivation of GMO surfaces when bombarded with ion beams are discussed.

  17. Electron cloud and ion effects

    CERN Document Server

    Arduini, Gianluigi

    2002-01-01

    The significant progress in the understanding and control of machine impedances has allowed obtaining beams with increasing brilliance. Dense positively charged beams generate electron clouds via gas ionization, photoemission and multipacting. The electron cloud in turn interacts with the beam and the surrounding environment originating fast coupled and single bunch instabilities, emittance blow-up, additional loads to vacuum and cryogenic systems, perturbation to beam diagnostics and feedbacks and it constitutes a serious limitation to machine performance. In a similar way high brilliance electron beams are mainly affected by positively charged ions produced by residual gas ionization. Recent observations of electron cloud build-up and its effects in present accelerators are reviewed and compared with theory and with the results of state-of-the-art computer simulations. Two-stream instabilities induced by the interaction between electron beams and ions are discussed. The implications for future accelerators ...

  18. Quantification of steroid conjugates using fast atom bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Gaskell, S.J.

    1990-01-01

    Fast atom bombardment/mass spectrometry or liquid secondary ion mass spectrometry provides the capability for direct analysis of steroid conjugates (sulfates, glucuronides) without prior hydrolysis or derivatization. During the analysis of biologic extracts, limitations on the sensitivity of detection arise from the presence of co-extracted material which may suppress or obscure the analyte signal. A procedure is described for the quantitative determination of dehydroepiandrosterone sulfate in serum which achieved selective isolation of the analyte using immunoadsorption extraction and highly specific detection using tandem mass spectrometry. A stable isotope-labeled analog [( 2H2]dehydroepiandrosterone sulfate) was used as internal standard. Fast atom bombardment of dehydroepiandrosterone sulfate yielded abundant [M-H]- ions that fragmented following collisional activation to give HSO4-; m/z 97. During fast atom bombardment/tandem mass spectrometry of serum extracts, a scan of precursor ions fragmenting to give m/z 97 detected dehydroepiandrosterone sulfate and the [2H2]-labeled analog with a selectivity markedly superior to that observed using conventional mass spectrometry detection. Satisfactory agreement was observed between quantitative data obtained in this way and data obtained by gas chromatography/mass spectrometry of the heptafluorobutyrates of dehydroepiandrosterone sulfate and [2H2]dehydroepiandrosterone sulfate obtained by direct derivatization. 21 refs

  19. Producing the radioelectric effect in solid dielectrics by bombardment with accelerated electrons. Obrazovaniye radioelektretnogo effekta v tverdykh dielektrikakh v rezul'tate oblucheniya ikh uskorennymi elektronami

    Energy Technology Data Exchange (ETDEWEB)

    Zavadovskaya, E K; Annenkov, Yu M; Boev, S G; Sigaev, G I

    1976-01-01

    A theoretical and experimental study was made concerning the kinetics of formation of electric moments in solid dielectrics bombarded with fast electrons in the atmosphere. The energy of bombarding electrons in the experiment ranged from 0.6 to 2.0 MeV, at an incident flux density ranging 1.10/sup -9/ to 5.10/sup -7/ A/cm/sup 2/. The specimens were actually grounded during bonbardment, owing to the high electrical conductivity of the ionized ambient gas, and the electric moments were equal to zero. The formation of electric moments occurred after cessation of the bombardment, because the density of the accumulated space charge had become redistributed. An examination was made of the redistribution of space-charge density due to the electrical conductivity of the dielectric, due to intrinsic charge carriers, and due to the release of charges stored in traps. Analytical relations derived for the kinetics of the electric moments give a qualitative description of the experimental results. 5 references.

  20. A novel ion-beam-mutation effect application in identification of gene involved in bacterial antagonism to fungal infection of ornamental crops

    Energy Technology Data Exchange (ETDEWEB)

    Mahadtanapuk, S. [Faculty of Agriculture and Natural Resources, University of Phayao, Maeka, Muang, Phayao 56000 (Thailand); Teraarusiri, W. [Central Laboratory, University of Phayao, Maeka, Muang, Phayao 56000 (Thailand); Nanakorn, W. [The Crown Property Bureau, 173 Nakhonratchasrima Road, Dusit, Bangkok 10300 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Anuntalabhochai, S., E-mail: soanu.1@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-05-01

    Highlights: • Ion beam bombardment induced mutation in bacterial B. licheniformis. • A mutant lost antifungal activity. • DNA fingerprint of the mutant was analyzed. • The lost gene was indentified to code for TrxR gene. • TrxR gene from B. licheniformis expressed the flower antagonism to fungi. - Abstract: This work is on a novel application of ion beam effect on biological mutation. Bacillus licheniformis (B. licheniformis) is a common soil bacterium with an antagonistic effect on Curcuma alismatifolia Gagnep. and Chrysanthemum indicum Linn. In an attempt to control fungal diseases of local crops by utilizing B. licheniformis, we carried out gene analysis of the bacterium to understand the bacterial antagonistic mechanism. The bacterial cells were bombarded to induce mutations using nitrogen ion beam. After ion bombardment, DNA analysis revealed that the modified polymorphism fragment present in the wild type was missing in a bacterial mutant which lost the antifungal activity. The fragments conserved in the wild type but lost in the mutant bacteria was identified to code for the thioredoxin reductase (TrxR) gene. The gene analysis showed that the TrxR gene from B. licheniformis had the expression of the antagonism to fungi in a synchronous time evolution with the fungus inhibition when the bacteria were co-cultivated with the fungi. The collective results indicate the TrxR gene responsible for the antagonism of bacteria B. licheniformis to fungal infection.

  1. A novel ion-beam-mutation effect application in identification of gene involved in bacterial antagonism to fungal infection of ornamental crops

    International Nuclear Information System (INIS)

    Mahadtanapuk, S.; Teraarusiri, W.; Nanakorn, W.; Yu, L.D.; Thongkumkoon, P.; Anuntalabhochai, S.

    2014-01-01

    Highlights: • Ion beam bombardment induced mutation in bacterial B. licheniformis. • A mutant lost antifungal activity. • DNA fingerprint of the mutant was analyzed. • The lost gene was indentified to code for TrxR gene. • TrxR gene from B. licheniformis expressed the flower antagonism to fungi. - Abstract: This work is on a novel application of ion beam effect on biological mutation. Bacillus licheniformis (B. licheniformis) is a common soil bacterium with an antagonistic effect on Curcuma alismatifolia Gagnep. and Chrysanthemum indicum Linn. In an attempt to control fungal diseases of local crops by utilizing B. licheniformis, we carried out gene analysis of the bacterium to understand the bacterial antagonistic mechanism. The bacterial cells were bombarded to induce mutations using nitrogen ion beam. After ion bombardment, DNA analysis revealed that the modified polymorphism fragment present in the wild type was missing in a bacterial mutant which lost the antifungal activity. The fragments conserved in the wild type but lost in the mutant bacteria was identified to code for the thioredoxin reductase (TrxR) gene. The gene analysis showed that the TrxR gene from B. licheniformis had the expression of the antagonism to fungi in a synchronous time evolution with the fungus inhibition when the bacteria were co-cultivated with the fungi. The collective results indicate the TrxR gene responsible for the antagonism of bacteria B. licheniformis to fungal infection

  2. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  3. Effects of track structure and cell inactivation on the calculation of heavy ion mutation rates in mammalian cells

    Science.gov (United States)

    Cucinotta, F. A.; Wilson, J. W.; Shavers, M. R.; Katz, R.

    1996-01-01

    It has long been suggested that inactivation severely effects the probability of mutation by heavy ions in mammalian cells. Heavy ions have observed cross sections of inactivation that approach and sometimes exceed the geometric size of the cell nucleus in mammalian cells. In the track structure model of Katz the inactivation cross section is found by summing an inactivation probability over all impact parameters from the ion to the sensitive sites within the cell nucleus. The inactivation probability is evaluated using the dose-response of the system to gamma-rays and the radial dose of the ions and may be equal to unity at small impact parameters for some ions. We show how the effects of inactivation may be taken into account in the evaluation of the mutation cross sections from heavy ions in the track structure model through correlation of sites for gene mutation and cell inactivation. The model is fit to available data for HPRT mutations in Chinese hamster cells and good agreement is found. The resulting calculations qualitatively show that mutation cross sections for heavy ions display minima at velocities where inactivation cross sections display maxima. Also, calculations show the high probability of mutation by relativistic heavy ions due to the radial extension of ions track from delta-rays in agreement with the microlesion concept. The effects of inactivation on mutations rates make it very unlikely that a single parameter such as LET or Z*2/beta(2) can be used to specify radiation quality for heavy ion bombardment.

  4. Effective charge of energetic ions in metals

    International Nuclear Information System (INIS)

    Kitagawa, M.; Brandt, W.

    1983-01-01

    The effective charge of energetic ion, as derived from stopping power of metals, is calculated by use of a dielectronic-response function method. The electronic distribution in the ion is described through the variational principle in a statistical approximation. The dependences of effective charge on the ion velocity, atomic number and r/sub s/-value of metal are derived at the low-velocity region. The effective charge becomes larger than the real charge of ion due to the close collisions. We obtain the quasi-universal equation of the fractional effective electron number of ion as a function of the ratio between the ionic size and the minimum distance approach. The comparsion between theoretical and experimental results of the effective charge is performed for the cases of N ion into Au, C and Al. We also discuss the equipartition rule of partially ionized ion at the high-velocity region

  5. Effects of the ion-solid interaction in glow discharge vapour deposition polymerization of pyromellitic dianhydride

    International Nuclear Information System (INIS)

    Maggioni, G.; Carturan, S.; Rigato, V.; Pieri, U.

    2000-01-01

    Low energy He ion bombardment of pyromellitic dianhydride monomer used in glow discharge vapour deposition polymerization (GDVDP) of polyimide coatings and its effects on the film deposition process have been studied. The sublimation of the monomer molecules and the simultaneous formation of a damaged, carbon-rich surface layer on the target are discussed from a theoretical point of view based on simulations of the ion-solid interaction. Optical emission and mass spectrometry have been used to analyse the species emitted from the target. In order to study the time evolution of the PMDA target damage, the deposition rate of monomer molecules has been monitored. FT-IR spectroscopy has been used to determine the molecular damaging of the target monomer and deposited films

  6. Effect of ion irradiation on the surface, structural and mechanical properties of brass

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Shahbaz; Bashir, Shazia, E-mail: shaziabashir@gcu.edu.pk; Ali, Nisar; Umm-i-Kalsoom,; Yousaf, Daniel; Faizan-ul-Haq,; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

    2014-04-01

    Highlights: • Brass targets were exposed to carbon ions of energy 2 MeV. • The effect of ion dose has been investigated. • The surface morphology is investigated by SEM analysis. • XRD analysis is performed to reveal structural modification. • Mechanical properties were investigated by tensile testing and microhardness testing. - Abstract: Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 10{sup 12} to 26 × 10{sup 13} ions/cm{sup 2}. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation

  7. Actinide production from xenon bombardments of curium-248

    International Nuclear Information System (INIS)

    Welch, R.B.

    1985-01-01

    Production cross sections for many actinide nuclides formed in the reaction of 129 Xe and 132 Xe with 248 Cm at bombarding energies slightly above the coulomb barrier were determined using radiochemical techniques to isolate these products. These results are compared with cross sections from a 136 Xe + 248 Cm reaction at a similar energy. When compared to the reaction with 136 Xe, the maxima in the production cross section distributions from the more neutron deficient projectiles are shifted to smaller mass numbers, and the total cross section increases for the production of elements with atomic numbers greater than that of the target, and decreases for lighter elements. These results can be explained by use of a potential energy surface (PES) which illustrates the effect of the available energy on the transfer of nucleons and describes the evolution of the di-nuclear complex, an essential feature of deep-inelastic reactions (DIR), during the interaction. The other principal reaction mechanism is the quasi-elastic transfer (QE). Analysis of data from a similar set of reactions, 129 Xe, 132 Xe, and 136 Xe with 197 Au, aids in explaining the features of the Xe + Cm product distributions, which are additionally affected by the depletion of actinide product yields due to deexcitation by fission. The PES is shown to be a useful tool to predict the general features of product distributions from heavy ion reactions

  8. Study of electron beam effects on surfaces using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS)

    International Nuclear Information System (INIS)

    Gettings, M.; Coad, J.P.

    1976-02-01

    Discrepancies in the surface analyses of oxidised or heavily contaminated materials have been observed between X-ray Photoelectron Spectroscopy (XPS) and techniques using electron beams (primarily Auger Electron Spectroscopy (AES)). These discrepancies can be ascribed to the influence of the primary electron beam and to illustrate the various types of electron effects different materials were analysed using XPS and Secondary Ion Mass Spectroscopy (SIMS) before and after large area electron bombardment. The materials used included chrome and stainless steels, nickel, platinum, glass and brass. (author)

  9. Radiation effects of ion beams on polymers

    International Nuclear Information System (INIS)

    Tagawa, Seiichi

    1993-01-01

    Recent progress in the radiation effects of ion beams on polymers are reviewed briefly. Our recent work on the radiation effects of ion beams on polystyrene thin films on silicon wafers and time resolved emission studies on polymers are described. (orig.)

  10. The terrestrial record of Late Heavy Bombardment

    Science.gov (United States)

    Lowe, Donald R.; Byerly, Gary R.

    2018-04-01

    Until recently, the known impact record of the early Solar System lay exclusively on the surfaces of the Moon, Mars, and other bodies where it has not been erased by later weathering, erosion, impact gardening, and/or tectonism. Study of the cratered surfaces of these bodies led to the concept of the Late Heavy Bombardment (LHB), an interval from about 4.1 to 3.8 billion years ago (Ga) during which the surfaces of the planets and moons in the inner Solar System were subject to unusually high rates of bombardment followed by a decline to present low impact rates by about 3.5 Ga. Over the past 30 years, however, it has become apparent that there is a terrestrial record of large impacts from at least 3.47 to 3.22 Ga and from 2.63 to 2.49 Ga. The present paper explores the earlier of these impact records, providing details about the nature of the 8 known ejecta layers that constitute the evidence for large terrestrial impacts during the earlier of these intervals, the inferred size of the impactors, and the potential effects of these impacts on crustal development and life. The existence of this record implies that LHB did not end abruptly at 3.8-3.7 Ga but rather that high impact rates, either continuous or as impact clusters, persisted until at least the close of the Archean at 2.5 Ga. It implies that the shift from external, impact-related controls on the long-term development of the surface system on the Earth to more internal, geodynamic controls may have occurred much later in geologic history than has been supposed previously.

  11. Mutagenic effects of ion implantation on stevia

    International Nuclear Information System (INIS)

    Wang Cailian; Shen Mei; Chen Qiufang; Lu Ting; Shu Shizhen

    1998-01-01

    Dry seeds of Stevia were implanted by 75 keV nitrogen and carbon ions with various doses. The biological effects in M 1 and mutation in M 2 were studied. The results showed that ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with ion beam dose. The rate of cells with chromosomal aberration was lower than that induced with γ-rays. Frequency of the mutation induced by implantation of N + and C + ions were higher than those induced by γ-rays. The rate of cell with chromosome aberration and in M 2 useful mutation induced by implantation of C + ion was higher than those induced by implantation of N + ion. Mutagenic effects Feng 1 x Riyuan and Riyuan x Feng 2 by implantation of N + and C + were higher than that of Jining and Feng 2

  12. A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

    Science.gov (United States)

    Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L. D.

    2012-02-01

    DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli ( E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

  13. A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

    International Nuclear Information System (INIS)

    Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L.D.

    2012-01-01

    DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli (E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

  14. Removal of foreign atoms from a metal surface bombarded with fast atomic particles

    Energy Technology Data Exchange (ETDEWEB)

    Dolotov, S.K.; Evstigneev, S.A.; Luk' yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

    1976-07-01

    A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal.

  15. Removal of foreign atoms from a metal surface bombarded with fast atomic particles

    International Nuclear Information System (INIS)

    Dolotov, S.K.; Evstigneev, S.A.; Luk'yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

    A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal

  16. High resistivity in InP by helium bombardment

    International Nuclear Information System (INIS)

    Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

    1984-01-01

    Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

  17. Room temperature deposition of high figure of merit Al-doped zinc oxide by pulsed-direct current magnetron sputtering: Influence of energetic negative ion bombardment on film's optoelectronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Fumagalli, F., E-mail: francesco.fumagalli@iit.it; Martí-Rujas, J., E-mail: javier.rujas@iit.it; Di Fonzo, F., E-mail: fabio.difonzo@iit.it

    2014-10-31

    Aluminum-doped zinc oxide is regarded as a promising indium-free transparent conductive oxide for photovoltaic and transparent electronics. In this study high transmittance (up to 90,6%) and low resistivity (down to 8,4°1{sup −4} Ω cm) AZO films were fabricated at room temperature on thermoplastic and soda-lime glass substrates by means of pulsed-DC magnetron sputtering in argon gas. Morphological, optical and electrical film properties were characterized using scanning electron microscopy, UV–vis–nIR photo-spectrometer, X-ray spectroscopy and four probes method. Optimal deposition conditions were found to be strongly related to substrate position. The dependence of functional properties on substrate off-axis position was investigated and correlated to the angular distributions of negative ions fluxes emerging from the plasma discharge. Figure of merit as high as 2,15 ± 0,14 Ω{sup −1} were obtained outside the negative oxygen ions confinement region. Combination of high quality AZO films deposited on flexible polymers substrates by means of a solid and scalable fabrication technique is of interest for application in cost-effective optoelectrical devices, organic photovoltaics and polymer based electronics. - Highlights: • High figure of merit transparent conductive oxide's deposited at room temperature. • High transmittance and low resistivity obtained on thermoplastic substrates. • Competitive optoelectrical properties compared to high temperature deposition. • Negative ion fluxes confinement influence structural and optoelectrical properties. • Easily adaptable for scaled-up low temperature AZO film deposition installations.

  18. Effects of Hydrogen Ion Implantation on TiC-C Coating of Stainless Steel

    Institute of Scientific and Technical Information of China (English)

    ZHANG Rui-qian; LIU Yao-guang; HUANG Ning-kang

    2008-01-01

    Titanium carbide coatings are widely used as various wear-resistant material.The hydrogen erosion resistance of TiC-C films and the effect of hydrogen participation on TiC-C films were studied.Seventy-five percent TiC-C films are prepared on stainless steel surface by using ion mixing,where TiC-C films are deposited by rf magnetron sputtering followed by argon ion bombardment.The samples are then submitted to hydrogen ion implantation at 1.2×10-3 Pa.Characterization for the 75% TiC-C films was done with SIMS,XRD,AES,and XPS.Secondary ion mass spectroscopy (SIMS) was used to analyze hydrogen concentration variation with depth,X-Ray diffraction (XRD) was used to identify the phases,and Auger electron spectra (AES) as well as X-ray photoelectron spectra (XPS) were used to check the effects of hydrogen on shifts of chemical bonding states of C and Ti in the TiC-C films.It is found that TiC-C films on stainless steel surface can prevent hydrogen from entering stainless steel.

  19. The effects of ion implantation on the beaks of orthodontic pliers

    Energy Technology Data Exchange (ETDEWEB)

    Mizrahi, E.; Cleaton-Jones, P.E.; Luyckz, S.; Fatti, L.P. (University of the Witwatersrand (South Africa))

    1991-06-01

    The surface of stainless steel may be hardened by bombarding the material with a stream of nitrogen ions generated by a nuclear accelerator. In the present study this technique was used to determine the hardening effect of ion implantation on the beaks of stainless steel orthodontic pliers. Ten orthodontic pliers (Dentarum 003 094) were divided into two equal groups, designated control and experimental. The beaks of the experimental pliers were subjected to ion implantation, after which the tips of the beaks of all the pliers were stressed in an apparatus attached to an Instron testing machine. A cyclical load of 500 N was applied to the handles of the pliers, while a 0.9 mm (0.036 inch) round, stainless steel wire was held between the tips of the beaks. The effect of the stress was assessed by measurement with a traveling microscope of the gap produced between the tips of the beaks. Measurements were taken before loading and after 20, 40, 60, and 80 cycles. Statistical analysis of variance and the two-sample t tests indicated that there was a significant increase in the size of the gap as the pliers were stressed from 0 to 80 cycles (p less than 0.001). Furthermore, the mean gap was significantly greater in the control group than in the experimental group (p less than 0.001). This study suggests that ion implantation increases the hardness of the tips of the beaks of orthodontic pliers.

  20. The effects of ion implantation on the beaks of orthodontic pliers

    International Nuclear Information System (INIS)

    Mizrahi, E.; Cleaton-Jones, P.E.; Luyckz, S.; Fatti, L.P.

    1991-01-01

    The surface of stainless steel may be hardened by bombarding the material with a stream of nitrogen ions generated by a nuclear accelerator. In the present study this technique was used to determine the hardening effect of ion implantation on the beaks of stainless steel orthodontic pliers. Ten orthodontic pliers (Dentarum 003 094) were divided into two equal groups, designated control and experimental. The beaks of the experimental pliers were subjected to ion implantation, after which the tips of the beaks of all the pliers were stressed in an apparatus attached to an Instron testing machine. A cyclical load of 500 N was applied to the handles of the pliers, while a 0.9 mm (0.036 inch) round, stainless steel wire was held between the tips of the beaks. The effect of the stress was assessed by measurement with a traveling microscope of the gap produced between the tips of the beaks. Measurements were taken before loading and after 20, 40, 60, and 80 cycles. Statistical analysis of variance and the two-sample t tests indicated that there was a significant increase in the size of the gap as the pliers were stressed from 0 to 80 cycles (p less than 0.001). Furthermore, the mean gap was significantly greater in the control group than in the experimental group (p less than 0.001). This study suggests that ion implantation increases the hardness of the tips of the beaks of orthodontic pliers

  1. Study of the effects of E × B fields as mechanism to carbon-nitrogen plasma immersion ion implantation on stainless steel samples

    Science.gov (United States)

    Pillaca, E. J. D. M.; Ueda, M.; Oliveira, R. M.; Pichon, L.

    2014-08-01

    Effects of E × B fields as mechanism to carbon-nitrogen plasma immersion ion implantation (PIII) have been investigated. This magnetic configuration when used in PIII allows obtaining high nitrogen plasma density close to the ion implantation region. Consequently, high ions dose on the target is possible to be achieved compared with standard PIII. In this scenario, nitrogen and carbon ions were implanted simultaneously on stainless steel, as measured by GDOES and detected by X-ray diffraction. Carbon-tape disposed on the sample-holder was sputtered by intense bombardment of nitrogen ions, being the source of carbon atoms in this experiment. The implantation of both N and C caused changes on sample morphology and improvement of the tribological properties of the stainless steel.

  2. Using polyatomic primary ions to probe an amino acid and a nucleic base in water ice

    Energy Technology Data Exchange (ETDEWEB)

    Conlan, X.A. [Surface Analysis Research Centre, School of Chemical Engineering and Analytical Science, University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)]. E-mail: x.conlan@postgrad.manchester.ac.uk; Biddulph, G.X. [Surface Analysis Research Centre, School of Chemical Engineering and Analytical Science, University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)]. E-mail: G.Biddulph@postgrad.manchester.ac.uk; Lockyer, N.P. [Surface Analysis Research Centre, School of Chemical Engineering and Analytical Science, University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom); Vickerman, J.C. [Surface Analysis Research Centre, School of Chemical Engineering and Analytical Science, University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)]. E-mail: John.Vickerman@manchester.ac.uk

    2006-07-30

    In this study on pure water ice, we show that protonated water species [H{sub 2}O] {sub n}H{sup +} are more prevalent than (H{sub 2}O) {sub n} {sup +} ions after bombardment by Au{sup +} monoatomic and Au{sub 3} {sup +} and C{sub 60} {sup +} polyatomic projectiles. This data also reveals significant differences in water cluster yields under bombardment by these three projectiles. The amino acid alanine and the nucleic base adenine in solution have been studied and have been shown to have an effect on the water cluster ion yields observed using an Au{sub 3} {sup +} ion beam.

  3. Potential energy effects and diffusion in the relaxed components of the reaction 197Au + 40Ar at 288 and 340 MeV bombarding energies

    International Nuclear Information System (INIS)

    Moretto, L.G.; Galin, J.; Babinet, R.; Fraenkel, Z.; Schmitt, R.; Jared, R.; Thompson, S.G.

    1976-01-01

    The fragments emitted in the reaction between 197 Au and 40 Ar at 288 and 340 MeV bombarding energies have been studied. The fragments have been identified in atomic number up to Z = 32 by means of an E-ΔE telescope. The kinetic energy distributions, the cross sections and the angular distributions have been measured for each Z. The kinetic energy distributions show the typical quasielastic and relaxed components; the Z-distributions show a smooth increase in the cross section with increasing Z, interrupted at relatively forward angles by a fairly sharp peak close to Z = 18. The angular distributions are forward peaked in excess of 1/sin theta for atomic numbers as large as Z approximately 30, as far as twelve atomic number units above the projectile; this is at variance with other reactions like Ag+ 20 Ne, where the angular distributions become 1/sin(theta) four or five atomic number units above the projectile. This is interpreted in terms of an enhanced diffusion towards symmetry, possibly promoted by the potential energy in the intermediate complex corresponding to two fragments in contact. (Auth.)

  4. Ion beam modification of biological materials in nanoscale

    Science.gov (United States)

    Yu, L. D.; Anuntalabhochai, S.

    2012-07-01

    Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.

  5. Ion beam modification of biological materials in nanoscale

    International Nuclear Information System (INIS)

    Yu, L.D.; Anuntalabhochai, S.

    2012-01-01

    Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.

  6. Effect for hydrogen, nitrogen, phosphorous, and argon ions irradiation on ZnO NWs

    International Nuclear Information System (INIS)

    Ishaq, A.; Usman, M.; Dee, C. F.; Khurram, A. A.; Yan, L.; Zhou, X. T.; Nadeem, A.; Naseem, S.; Rafique, H. M.; Majlis, B. Y.

    2013-01-01

    Zinc oxide (ZnO) nanowires (NWs) are exposed to energetic proton (H + ), nitrogen (N + ), phosphorus (P + ), and argon (Ar + ) ions to understand the radiation hardness and structural changes induced by these irradiations. High-resolution transmission electron microscopy is utilized to see the irradiation effects in NWs. Multiple doses and energies of radiation at different temperatures are used for different set of samples. The study reveals that wurtzite (crystalline)-structured ZnO NWs experience amorphization, degradation, and morphological changes after the irradiation. At room temperature, deterioration of the crystalline structure is observed under high fluence of H + , N + , and P + ions. While for ZnO NWs, bombarded by Ar + and P + ions, nano-holes are produced. The ZnO NWs surfaces also show corrugated morphology full of nano-humps when irradiated by Ar + ions at 400 °C. The corrugated surface could serve as tight-holding interface when interconnecting it with other NWs/nanotubes. These nano-humps may have the function of increasing the surface for surface-oriented sensing applications in the future.

  7. Effect for hydrogen, nitrogen, phosphorous, and argon ions irradiation on ZnO NWs

    Energy Technology Data Exchange (ETDEWEB)

    Ishaq, A., E-mail: ishaq_ah@yahoo.com; Usman, M. [National Centre for Physics, Quaid-i-Azam University, Experimental Physics Labs (Pakistan); Dee, C. F. [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Khurram, A. A. [National Centre for Physics, Quaid-i-Azam University, Experimental Physics Labs (Pakistan); Yan, L., E-mail: yanlong@sinap.ac.cn; Zhou, X. T. [Chinese Academy of Sciences, Shanghai Institute of Applied Physics (China); Nadeem, A.; Naseem, S. [University of the Punjab, Centre of Excellence in Solid State Physics (Pakistan); Rafique, H. M. [University of the Punjab, Department of Physics (Pakistan); Majlis, B. Y. [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia)

    2013-04-15

    Zinc oxide (ZnO) nanowires (NWs) are exposed to energetic proton (H{sup +}), nitrogen (N{sup +}), phosphorus (P{sup +}), and argon (Ar{sup +}) ions to understand the radiation hardness and structural changes induced by these irradiations. High-resolution transmission electron microscopy is utilized to see the irradiation effects in NWs. Multiple doses and energies of radiation at different temperatures are used for different set of samples. The study reveals that wurtzite (crystalline)-structured ZnO NWs experience amorphization, degradation, and morphological changes after the irradiation. At room temperature, deterioration of the crystalline structure is observed under high fluence of H{sup +}, N{sup +}, and P{sup +} ions. While for ZnO NWs, bombarded by Ar{sup +} and P{sup +} ions, nano-holes are produced. The ZnO NWs surfaces also show corrugated morphology full of nano-humps when irradiated by Ar{sup +} ions at 400 Degree-Sign C. The corrugated surface could serve as tight-holding interface when interconnecting it with other NWs/nanotubes. These nano-humps may have the function of increasing the surface for surface-oriented sensing applications in the future.

  8. Efficient and rapid C. elegans transgenesis by bombardment and hygromycin B selection.

    Directory of Open Access Journals (Sweden)

    Inja Radman

    Full Text Available We report a simple, cost-effective, scalable and efficient method for creating transgenic Caenorhabditis elegans that requires minimal hands-on time. The method combines biolistic bombardment with selection for transgenics that bear a hygromycin B resistance gene on agar plates supplemented with hygromycin B, taking advantage of our observation that hygromycin B is sufficient to kill wild-type C. elegans at very low concentrations. Crucially, the method provides substantial improvements in the success of bombardments for isolating transmitting strains, the isolation of multiple independent strains, and the isolation of integrated strains: 100% of bombardments in a large data set yielded transgenics; 10 or more independent strains were isolated from 84% of bombardments, and up to 28 independent strains were isolated from a single bombardment; 82% of bombardments yielded stably transmitting integrated lines with most yielding multiple integrated lines. We anticipate that the selection will be widely adopted for C. elegans transgenesis via bombardment, and that hygromycin B resistance will be adopted as a marker in other approaches for manipulating, introducing or deleting DNA in C. elegans.

  9. Review of heavy ion reaction mechanisms

    International Nuclear Information System (INIS)

    Ngo, C.

    1986-04-01

    We review some of the many aspects of heavy-ion reaction mechanisms observed at bombarding energies smaller than approximately 50 MeV/u that is to say in what is called the low bombarding energy domain and the intermediate bombarding energy domain. We emphasize the results concerning the use of very heavy projectiles which has led to the observation of new mechanisms

  10. Specific ion effects on membrane potential and the permselectivity of ion exchange membranes

    KAUST Repository

    Geise, Geoffrey M.; Cassady, Harrison J.; Paul, Donald R.; Logan, Bruce E.; Hickner, Michael A.

    2014-01-01

    -ions also appeared to influence permselectivity leading to ion-specific effects; co-ions that are charge dense and have low polarizability tended to result in high membrane permselectivity. This journal is

  11. Hydrogen pumping and release by graphite under high flux plasma bombardment

    International Nuclear Information System (INIS)

    Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; Labombard, B.; Nygren, R.; Wilson, K.L.

    1988-01-01

    Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ∼ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 degree C. The plasma bombarding energy was varied between 100 and 200 eV. The gettering speed of the activated graphite surface is estimated to be as large as 25 liters s -1 cm -2 at total pressures between 10 -6 and 10 -7 torr. The gettering capacity estimated is 0.025 torr-liter/cm 2 at room temperature. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 degree C and at a plasma bombarding energy of 300 eV

  12. Experimental apparatus to investigate interactions of low energy ions with solid surfaces, 1

    International Nuclear Information System (INIS)

    Tsukakoshi, Osamu; Narusawa, Tadashi; Mizuno, Masayasu; Sone, Kazuho; Ohtsuka, Hidewo.

    1975-12-01

    Experimental apparatus to study the surface phenomena has been designed, which is intended to solve the vacuum wall problems in future thermonuclear fusion reactors and large experimental tokamak devices. An ion source and the beam transport optics are provided for bombarding solid target surface with an ion beam of energy from 0.1 to 6 keV. Measuring instruments include an ion energy analyser, a quadrupole mass spectrometer, an Auger electron spectrometer, an electro-micro-balance, a neutral particle energy spectrometer and its calibration system. Pumping system consists of oil-free ultrahigh vacuum pumps. Various kinds of experiments will be carried out by using the apparatus: 1) sputtering by low energy ion bombardment, 2) re-emission of the incident particles during and after ion bombardment, 3) release of adsorbed and occluded gases in the solids by ion bombardment, and 4) backscattering of fast ions. The combinations of measuring instruments for each experiment and their relative positions in the vacuum chamber are described through detailed drawings. The fundamental aspect in design of the ion beam transport optics for a low energy ion beam which can no longer neglect the space charge effect is also discussed. (auth.)

  13. Ion beam induced effects on the ferromagnetism in Pd nanoparticles

    International Nuclear Information System (INIS)

    Kulriya, P. K.; Mehta, B. R.; Agarwal, D. C.; Agarwal, Kanika; Kumar, Praveen; Shivaprasad, S. M.; Avasthi, D. K.

    2012-01-01

    Present study demonstrates the role of metal-insulator interface and ion irradiation induced defects on the ferromagnetic properties of the non-magnetic materials. Magnetic properties of the Pd nanoparticles(NPs) embedded in the a-silica matrix synthesized using atom beam sputtering technique, were determined using SQUID magnetometry measurements which showed that ferromagnetic response of Pd increased by 3.5 times on swift heavy ion(SHI) irradiation. The ferromagnetic behavior of the as-deposited Pd NPs is due to strain induced by the surrounding matrix and modification in the electronic structure at the Pd-silica interface as revealed by insitu XRD and XPS investigations, respectively. The defects created by the SHI bombardment are responsible for enhancement of the magnetization in the Pd NPs.

  14. Heating effects in a liquid metal ion source

    International Nuclear Information System (INIS)

    Mair, G.L.R.; Aitken, K.L.

    1984-01-01

    A reassessment is made of the heating occurring at the anode of a liquid metal ion source, in the light of new microscopic observations. The apex region of the cones is in the form of a cusp, or jet, even at very low currents. The calculation for ohmic heating is conclusive for low currents; no heating occurs at the anode; for high currents (approx. 50-100 μA), substantial heating is conceivable, if a long, very thin, cylindrical jet exists at the apex of the anode. The answer to the problem of external heating, in the form of electrons bombarding the anode, is not quite conclusive; this is because of the impossibility of correctly assessing the electron flux entering the anode. However, it would appear to be a definite conclusion that for reasons of self-consistency field-ionisation of thermally released atoms cannot be a significant ion emission mechanism. (author)

  15. Modeling the reduction of gross lithium erosion observed under high-flux deuterium bombardment

    NARCIS (Netherlands)

    Abrams, T.; Jaworski, M. A.; Kaita, R.; Nichols, J. H.; Stotler, D. P.; De Temmerman, G.; van den Berg, M. A.; van der Meiden, H. J.; Morgan, T. W.

    2015-01-01

    Abstract Both thin (<1 μm) and thick (∼500 μm) lithium films under high-flux deuterium and neon plasma bombardment were studied in the linear plasma device Magnum-PSI at ion fluxes >1024 m−2 s−1 and surface temperatures <700 °C.

  16. Applications of ion scattering in surface analysis

    International Nuclear Information System (INIS)

    Armour, D.G.

    1981-01-01

    The study of ion scattering from surfaces has made an increasingly important contribution both to the development of highly surface specific analysis techniques and to the understanding of the atomic collision processes associated with ion bombardment of solid surfaces. From an analysis point of view, by appropriate choice of parameters such as ion energy and species, scattering geometry and target temperature, it is possible to study not only the composition of the surface layer but also the detailed atomic arrangement. The ion scattering technique is thus particularly useful for the study of surface compositional and structural changes caused by adsorption, thermal annealing or ion bombardment treatments of simple or composite materials. Ion bombardment induced desorption, damage or atomic mixing can also be effectively studied using scattering techniques. By reviewing the application of the technique to a variety of these technologically important surface investigations, it is possible to illustrate the way in which ion scattering has developed as the understanding of the underlying physics has improved. (author)

  17. Effect of Ar ion on the surface properties of low density polyethylene

    Science.gov (United States)

    Zaki, M. F.

    2016-04-01

    In this paper, low-density polyethylene (LDPE) was irradiated by argon ion with different fluences up to 1015ions/cm2. The optical, chemical and hardness properties have been investigated using UV-Vis spectroscopy, Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and micro-indentation tester, respectively. The results showed the ion beam bombardment induced decreases in the transmittance of the irradiated polymer samples. This change in transmittance can be attributed to the formation of conjugated bonds i.e. possible formation of defects and/or carbon clusters. The indirect optical band gap decreased from 3.0 eV for the pristine sample to 2.3 eV for that sample irradiated with the highest fluence of the Ar ion beam. Furthermore, the number of carbon atoms and clusters increased with increasing Ar ion fluences. FTIR spectra showed the formation of new bands of the bombarded polymer samples. Furthermore, polar groups were created on the surface of the irradiated samples which refer to the increase of the hydrophilic nature of the surface of the irradiated samples. The Vicker's hardness increased from 4.9 MPa for the pristine sample to 17.9 MPa for those bombarded at the highest fluence. This increase is attributed to the increase in the crosslinking and alterations of the bombarded surface into hydrogenated amorphous carbon, which improves the hardness of the irradiated samples. The bombarded LDPE surfaces may be used in special applications to the field of the micro-electronic devices and shock absorbers.

  18. Quantitation of stable isotopic tracers of calcium by fast atom bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Jiang, X.; Smith, D.L.

    1987-01-01

    Instrumentation and methodology developed for quantitation of stable isotopic traces in urine are described. Calcium is isolated from urine as the insoluble oxalate salt which is subsequently dissolved in hydrochloric acid. The isotopic content of the acid solution is determined by use of a conventional mass spectrometer equipped with a fast atom bombardment ion source. Calcium ions are desorbed from the sample surface by a beam of high-energy xenon atoms and detected with a high-resolution mass spectrometer. A data acquisition system has been developed to control the mass spectrometer and record the ion signals. Detailed analysis of potential sources of error indicates that the precision of the method is presently limited primarily by an isotope effect that occurs during ion desorption. Results presented here demonstrate that the relative abundances of calcium isotopes in urine can be determined with high precision (coefficient of variation < 0.2%) and that the method is a viable alternative to conventional thermal ionization mass spectrometry. The method is especially attractive because it uses a conventional high-resolution mass spectrometer which is routinely used for analysis of organic substances

  19. Ion beam irradiation effects on aromatic polymers

    International Nuclear Information System (INIS)

    Shukushima, Satoshi; Ueno, Keiji

    1995-01-01

    We studied the optical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H + , H 2 + and He + ions. The examined aromatic polymers were polyetherether ketone(PEEK), polyetherimide(PEI), polyether sulfon(PES), polysulfon(PSF), and polyphenylene sulfide(PPS). The optical densities at 300nm of PES and PSF greatly increased after the irradiation. The optical densities at 400nm of all the examined polymer lineally increased with the irradiation dose. The PEEK film which had been irradiated with 1 MeV H + was not deformed above melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the aromatic polymers for the same absorption energy. (author)

  20. Localization effects in heavy ion collisions

    International Nuclear Information System (INIS)

    Donangelo, R.J.

    1984-01-01

    Radial and angular localization in heavy ion reactions on deformed nuclei is discussed. A theoretical method appropriate to study these localization effects is briefly described and then applied to the determination of deformed heavy ion potentials from inclastic scattering data. It is argued that one-and two-nucleon transfer reactions on deformed nuclei can provide a probe of nuclear structure in high angular momentum states and be at least qualitatively analyzed in the light of these localization concepts. (Author) [pt

  1. Effect of Atmospheric Ions on Interfacial Water

    Directory of Open Access Journals (Sweden)

    Chien-Chang Kurt Kung

    2014-11-01

    Full Text Available The effect of atmospheric positivity on the electrical properties of interfacial water was explored. Interfacial, or exclusion zone (EZ water was created in the standard way, next to a sheet of Nafion placed horizontally at the bottom of a water-filled chamber. Positive atmospheric ions were created from a high voltage source placed above the chamber. Electrical potential distribution in the interfacial water was measured using microelectrodes. We found that beyond a threshold, the positive ions diminished the magnitude of the negative electrical potential in the interfacial water, sometimes even turning it to positive. Additionally, positive ions produced by an air conditioner were observed to generate similar effects; i.e., the electrical potential shifted in the positive direction but returned to negative when the air conditioner stopped blowing. Sometimes, the effect of the positive ions from the air conditioner was strong enough to destroy the structure of interfacial water by turning the potential decidedly positive. Thus, positive air ions can compromise interfacial water negativity and may explain the known negative impact of positive ions on health.

  2. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    The current paper presents a state-of-the-art review in the field of ion implantation of polymers. Numerous published studies of polymers modified by ion beams are analysed. General aspects of ion stopping, latent track formation and changes of structure and composition of organic materials...... are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...... is put on the low-energy implantation of metal ions causing the nucleation and growth of nanoparticles in the shallow polymer layers. Electrical, optical and magnetic properties of metal/polymer composites are under the discussion and the approaches towards practical applications are overviewed....

  3. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  4. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    International Nuclear Information System (INIS)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

    2002-01-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  5. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    International Nuclear Information System (INIS)

    Zhang, Lili; Xu, Xue; Wu, Yuejin

    2013-01-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N + and Ar + ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

  6. Production of the Ne Auger electrons by Ne/sup +/ bombardment of Mg and Al surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ferrante, J; Pepper, S V [National Aeronautics and Space Administration, Cleveland, Ohio (USA). Lewis Research Center

    1976-07-01

    The authors have bombarded Mg and Al surfaces with Ne/sup +/ ions and in this letter present evidence for the production of an inner shell vacancy in the Ne by the asymmetric Ne-Mg and Ne-Al collision. In addition, autoionization states of neutral Ne have been observed. These states are to be distinguished from the more usual case in Auger electron spectroscopy of de-excitation of an ion with a core vacancy.

  7. Actinide production in 136Xe bombardments of 249Cf

    International Nuclear Information System (INIS)

    Gregorich, K.E.

    1985-08-01

    The production cross sections for the actinide products from 136 Xe bombardments of 249 Cf at energies 1.02, 1.09, and 1.16 times the Coulomb barrier were determined. Fractions of the individual actinide elements were chemically separated from recoil catcher foils. The production cross sections of the actinide products were determined by measuring the radiations emitted from the nuclides within the chemical fractions. The chemical separation techniques used in this work are described in detail, and a description of the data analysis procedure is included. The actinide production cross section distributions from these 136 Xe + 249 Cf bombardments are compared with the production cross section distributions from other heavy ion bombardments of actinide targets, with emphasis on the comparison with the 136 Xe + 248 Cm reaction. A technique for modeling the final actinide cross section distributions has been developed and is presented. In this model, the initial (before deexcitation) cross section distribution with respect to the separation energy of a dinuclear complex and with respect to the Z of the target-like fragment is given by an empirical procedure. It is then assumed that the N/Z equilibration in the dinuclear complex occurs by the transfer of neutrons between the two participants in the dinuclear complex. The neutrons and the excitation energy are statistically distributed between the two fragments using a simple Fermi gas level density formalism. The resulting target-like fragment initial cross section distribution with respect to Z, N, and excitation energy is then allowed to deexcite by emission of neutrons in competition with fission. The result is a final cross section distribution with respect to Z and N for the actinide products. 68 refs., 33 figs., 6 tabs

  8. Specific Ion Effects in Cholesterol Monolayers

    Directory of Open Access Journals (Sweden)

    Teresa Del Castillo-Santaella

    2016-05-01

    Full Text Available The interaction of ions with interfaces and, in particular, the high specificity of these interactions to the particular ions considered, are central questions in the field of surface forces. Here we study the effect of different salts (NaI, NaCl, CaCl2 and MgCl2 on monolayers made of cholesterol molecules, both experimentally (surface area vs. lateral pressure isotherms measured by a Langmuir Film Balance and theoretically (molecular dynamics (MD all-atomic simulations. We found that surface isotherms depend, both quantitatively and qualitatively, on the nature of the ions by altering the shape and features of the isotherm. In line with the experiments, MD simulations show clear evidences of specific ionic effects and also provide molecular level details on ion specific interactions with cholesterol. More importantly, MD simulations show that the interaction of a particular ion with the surface depends strongly on its counterion, a feature ignored so far in most theories of specific ionic effects in surface forces.

  9. Mixed mobile ion effect in fluorozincate glasses

    International Nuclear Information System (INIS)

    Ghosh, S; Ghosh, A

    2005-01-01

    The mixed mobile ion effect has been investigated for the first time in zinc fluoride glasses where in addition to alkali cations fluorine anions also participate in the diffusion process, unlike mixed alkali oxide glasses. The minimum in the conductivity, conductivity relaxation frequency, crossover frequency and decoupling index indicates the existence of the mixed mobile ion effect in these fluoride glasses. It has been observed that the non-exponential parameter and the frequency exponent are independent of temperature. It has been established that alkali ions and fluorine anions exhibit lower dimensionality of the conduction pathways in mixed alkali zinc fluoride glasses than that in the single alkali lithium based zinc fluoride glasses while they are migrating. From the scaling of the conductivity spectra, it has been established that the relaxation dynamics in mixed alkali zinc fluoride glasses is independent of temperature and composition

  10. Radiation effects on ion exchange materials

    International Nuclear Information System (INIS)

    Gangwer, T.E.; Goldstein, M.; Pillay, K.K.S.

    1977-11-01

    An extensive literature review and data compilation has been completed on the radiation-damage of ion exchange resins. The primary goal of the study has been to review the available literature on ion exchange materials used in, as well as those with potential for use in, the nuclear fuel and waste reprocessing areas. The physical and chemical properties of ion exchangers are reviewed. Experimental parameters useful in characterizing the effects of radiation on synthetic ion exchange resins are identified or defined. In compiling the diverse types of data, an effort was made to present the experimental data or experimentally based parameters in a format that would be useful for inter-comparing radiation effects on resins. When subject to radiation there are various general trends or qualitative effects displayed by the different types of resins. These radiation-trends and effects have been formulated into qualitative statements. The present day level of understanding of the behavior of resins under ionizing radiation is too limited to justify quantitative predictive modeling. The limitations and deficiencies of the literature are discussed and the experimentation needed to achieve quantitative modeling are outlined. 14 figs., 108 references

  11. Radiation effects on ion exchange materials

    Energy Technology Data Exchange (ETDEWEB)

    Gangwer, T.E.; Goldstein, M.; Pillay, K.K.S.

    1977-11-01

    An extensive literature review and data compilation has been completed on the radiation-damage of ion exchange resins. The primary goal of the study has been to review the available literature on ion exchange materials used in, as well as those with potential for use in, the nuclear fuel and waste reprocessing areas. The physical and chemical properties of ion exchangers are reviewed. Experimental parameters useful in characterizing the effects of radiation on synthetic ion exchange resins are identified or defined. In compiling the diverse types of data, an effort was made to present the experimental data or experimentally based parameters in a format that would be useful for inter-comparing radiation effects on resins. When subject to radiation there are various general trends or qualitative effects displayed by the different types of resins. These radiation-trends and effects have been formulated into qualitative statements. The present day level of understanding of the behavior of resins under ionizing radiation is too limited to justify quantitative predictive modeling. The limitations and deficiencies of the literature are discussed and the experimentation needed to achieve quantitative modeling are outlined. 14 figs., 108 references.

  12. Intense Ion Pulses for Radiation Effects Research

    Science.gov (United States)

    2017-04-01

    induction linear accelerator that has been developed to deliver intense, up to 50 nC/pulse/mm2, sub-ns pulses of light ions with kinetic energy up to 1.2...II induction linear accelerator for intense ion beam pulses at Berkeley Lab. Figure 3. Helium current and integrated charge versus time at the...under contracts DE-AC02-205CH11231 and DE-AC52-07NA27344. JOURNAL OF RADIATION EFFECTS, Research and Engineering Vol. 35, No. 1, April 2017 158 INTENSE

  13. Fundamental processes in ion plating

    International Nuclear Information System (INIS)

    Mattox, D.M.

    1980-01-01

    Ion plating is a generic term applied to film deposition processes in which the substrate surface and/or the depositing film is subjected to a flux of high energy particles sufficient to cause changes in the interfacial region of film properties compared to a nonbombarded deposition. Ion plating is being accepted as an alternative coating technique to sputter deposition, vacuum evaporation and electroplating. In order to intelligently choose between the various deposition techniques, the fundamental mechanisms, relating to ion plating, must be understood. This paper reviews the effects of low energy ion bombardment on surfaces, interface formation and film development as they apply to ion plating and the implementation and applications of the ion plating process

  14. Ion-induced effects on metallic nanoparticles

    International Nuclear Information System (INIS)

    Klimmer, Andreas

    2010-01-01

    This work deals with the ion-irradiation of metallic nanoparticles in combination with various substrates. Particle diameters were systematically varied within the range of 2.5-14 nm, inter-particle distances range from 30-120 nm. Irradiations were performed with various inert gas ions with energies of 200 keV, resulting in an average ion range larger than the particle dimensions and therefore the effects of irradiation are mainly due to creation of structural defects within the particles and the underlying substrate as well. The main part of this work deals with ion-induced burrowing of metallic nanoparticles into the underlying substrate. The use of micellar nanoparticles with sharp size distribution combined with AFM and TEM analysis allows a much more detailed look at this effect than other works on that topic so far. With respect to the particle properties also a detailed look on the effect of irradiation on the particle structure would be interesting, which might lead to a deliberate influence on magnetic properties, for example. Within the context of this work, first successful experiments were performed on FePt particles, showing a significant reduction of the ordering temperature leading to the magnetically interesting, ordered L1 0 phase. (orig.)

  15. A novel ion-beam-mutation effect application in identification of gene involved in bacterial antagonism to fungal infection of ornamental crops

    Science.gov (United States)

    Mahadtanapuk, S.; Teraarusiri, W.; Nanakorn, W.; Yu, L. D.; Thongkumkoon, P.; Anuntalabhochai, S.

    2014-05-01

    This work is on a novel application of ion beam effect on biological mutation. Bacillus licheniformis (B. licheniformis) is a common soil bacterium with an antagonistic effect on Curcuma alismatifolia Gagnep. and Chrysanthemum indicum Linn. In an attempt to control fungal diseases of local crops by utilizing B. licheniformis, we carried out gene analysis of the bacterium to understand the bacterial antagonistic mechanism. The bacterial cells were bombarded to induce mutations using nitrogen ion beam. After ion bombardment, DNA analysis revealed that the modified polymorphism fragment present in the wild type was missing in a bacterial mutant which lost the antifungal activity. The fragments conserved in the wild type but lost in the mutant bacteria was identified to code for the thioredoxin reductase (TrxR) gene. The gene analysis showed that the TrxR gene from B. licheniformis had the expression of the antagonism to fungi in a synchronous time evolution with the fungus inhibition when the bacteria were co-cultivated with the fungi. The collective results indicate the TrxR gene responsible for the antagonism of bacteria B. licheniformis to fungal infection.

  16. Fast atom bombardment tandem mass spectrometry of carotenoids

    Energy Technology Data Exchange (ETDEWEB)

    van Breeman, R.B. [Univ. of Illinois, Chicago, IL (United States); Schmitz, H.H.; Schwartz, S.J. [North Carolina State Univ., Raleigh, NC (United States)

    1995-02-01

    Positive ion fast atom bombardment (FAB) tandem mass spectrometry (MS-MS) using a double-focusing mass spectrometer with linked scanning at constant B/E and high-energy collisionally activated dissociation (CAD) was used to differentiate 17 different cartenoids, including {beta}-apo-8{prime}- carotenal, astaxanthin, {alpha}-carotene, {beta}-carotene, {gamma}-carotene, {zeta}-carotene, canthaxanthin, {beta}-cryptoxanthin, isozeaxanthin bis (pelargonate), neoxanthin, neurosporene, nonaprene, lutein, lycopene, phytoene, phytofluene, and zeaxanthin. The carotenoids were either synthetic or isolated from plant tissues. The use of FAB ionization minimized degradation or rearrangement of the carotenoid structures due to the inherent thermal instability generally ascribed to these compounds. Instead of protonated molecules, both polar xanthophylls and nonpolar carotenes formed molecular ions, M{sup {center_dot}+}, during FAB ionization. Following collisionally activated dissociation, fragment ions of selected molecular ion precursors showed structural features indicative of the presence of hydroxyl groups, ring systems, ester groups, and aldehyde groups and the extent of aliphatic polyene conjugation. The fragmentation patterns observed in the mass spectra herein may be used as a reference for the structural determination of carotenoids isolated from plant and animal tissues. 18 refs., 4 figs.

  17. Structural effects of C60+ bombardment on various natural mineral samples-Application to analysis of organic phases in geological samples

    International Nuclear Information System (INIS)

    Siljestroem, S.; Lausmaa, J.; Hode, T.; Sundin, M.; Sjoevall, P.

    2011-01-01

    Organic phases trapped inside natural mineral samples are of considerable interest in astrobiology, geochemistry and geobiology. Examples of such organic phases are microfossils, kerogen and oil. Information about these phases is usually retrieved through bulk crushing of the rock which means both a risk of contamination and that the composition and spatial distribution of the organics to its host mineral is lost. An attractive of way to retrieve information about the organics in the rock is depth profiling using a focused ion beam. Recently, it was shown that it is possible to obtain detailed mass spectrometric information from oil-bearing fluid inclusions, i.e. small amounts of oil trapped inside a mineral matrix, using ToF-SIMS. Using a 10 keV C 60 + sputter beam and a 25 keV Bi 3 + analysis beam, oil-bearing inclusions in different minerals were opened and analysed individually. However, sputtering with a C 60 + beam also induced other changes to the mineral surface, such as formation of topographic features and carbon deposition. In this paper, the cause of these changes is explored and the consequences of the sputter-induced features on the analysis of organic phases in natural mineral samples (quartz, calcite and fluorite) in general and fluid inclusions in particular are discussed. The dominating topographical features that were observed when a several micrometers deep crater is sputtered with 10 keV C 60 + ions on a natural mineral surface are conical-shaped and ridge-like structures that may rise several micrometers, pointing in the direction of the incident C 60 + ion beam, on an otherwise flat crater bottom. The sputter-induced structures were found to appear at places with different chemistry than the host mineral, including other minerals phases and fluid inclusions, while structural defects in the host material, such as polishing marks or scratches, did not necessarily result in sputter-induced structures. The ridge-like structures were often covered

  18. Molecular dynamics studies of the ion beam induced crystallization in silicon

    International Nuclear Information System (INIS)

    Marques, L.A.; Caturla, M.J.; Huang, H.

    1995-01-01

    We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecular dynamics techniques. The growth of small crystal seeds embedded in the amorphous phase has been monitored for several temperatures in order to get information on the effect of the thermal temperature increase introduced by the incoming ion. The role of ion-induced defects on the growth has been also studied

  19. Effect of finite ion-temperature on ion-acoustic solitary waves in an inhomogeneous plasma

    International Nuclear Information System (INIS)

    Shivamoggi, B.K.

    1981-01-01

    The propagation of weakly nonlinear ion-acoustic waves in an inhomogeneous plasma is studied taking into account the effect of finite ion temperature. It is found that, whereas both the amplitude and the velocity of propagation decrease as the ion-acoustic solitary wave propagates into regions of higher density, the effect of a finite ion temperature is to reduce the amplitude but enhance the velocity of propagation of the solitary wave. (author)

  20. Ion temperature effect on the propagation of ion acoustic solitary waves in a relativistic magnetoplasma

    International Nuclear Information System (INIS)

    Salahuddin, M.

    1990-01-01

    Using the reductive perturbation technique the Korteweg-de Vries (KdV) equation is derived for ion acoustic waves, in the presence of weak relativistic effects and warm ions, in a magnetized plasma. The influence of non ideal effects on the amplitude and width of the ion acoustic solitary waves is also discussed. The results are depicted in the figures. It is shown that the simultaneous presence of ion streaming and magnetic field stops the tendency of soliton breaking. (author)

  1. Two-dimensional ion effects in relativistic diodes

    International Nuclear Information System (INIS)

    Poukey, J.W.

    1975-01-01

    In relativistic diodes, ions are emitted from the anode plasma. The effects and properties of these ions are studied via a two-dimensional particle simulation code. The space charge of these ions enhances the electron emission, and this additional current (including that of the ions, themselves) aids in obtaining superpinched electron beams for use in pellet fusion studies. (U.S.)

  2. Effect of surface modification by nitrogen ion implantation on the electrochemical and cellular behaviors of super-elastic NiTi shape memory alloy.

    Science.gov (United States)

    Maleki-Ghaleh, H; Khalil-Allafi, J; Sadeghpour-Motlagh, M; Shakeri, M S; Masoudfar, S; Farrokhi, A; Beygi Khosrowshahi, Y; Nadernezhad, A; Siadati, M H; Javidi, M; Shakiba, M; Aghaie, E

    2014-12-01

    The aim of this investigation was to enhance the biological behavior of NiTi shape memory alloy while preserving its super-elastic behavior in order to facilitate its compatibility for application in human body. The surfaces of NiTi samples were bombarded by three different nitrogen doses. Small-angle X-ray diffraction was employed for evaluating the generated phases on the bombarded surfaces. The electrochemical behaviors of the bare and surface-modified NiTi samples were studied in simulated body fluid (SBF) using electrochemical impedance and potentio-dynamic polarization tests. Ni ion release during a 2-month period of service in the SBF environment was evaluated using atomic absorption spectrometry. The cellular behavior of nitrogen-modified samples was studied using fibroblast cells. Furthermore, the effect of surface modification on super-elasticity was investigated by tensile test. The results showed the improvement of both corrosion and biological behaviors of the modified NiTi samples. However, no significant change in the super-elasticity was observed. Samples modified at 1.4E18 ion cm(-2) showed the highest corrosion resistance and the lowest Ni ion release.

  3. Modification of bamboo surface by irradiation of ion beams

    International Nuclear Information System (INIS)

    Wada, M.; Nishigaito, S.; Flauta, R.; Kasuya, T.

    2003-01-01

    When beams of hydrogen ions, He + and Ar + were irradiated onto bamboo surface, gas release of hydrogen, water, carbon monoxide and carbon dioxide were enhanced. Time evolution of the gas emission showed two peaks corresponding to release of adsorbed gas from the surface by sputtering, and thermal desorption caused by the beam heating. The difference in etched depths between parenchyma lignin and vascular bundles was measured by bombarding bamboo surface with the ion beams in the direction parallel to the vascular bundles. For He + and Ar + , parenchyma lignin was etched more rapidly than vascular bundles, but the difference in etched depth decreased at a larger dose. In the case of hydrogen ion bombardment, vascular bundles were etched faster than parenchyma lignin and the difference in etched depth increased almost in proportion to the dose. The wettability of outer surface of bamboo was improved most effectively by irradiation of a hydrogen ion beam

  4. Dynamical effects prior to heavy ion fusion

    International Nuclear Information System (INIS)

    Mikhajlova, T.I.; Mikhajlov, I.N.; Molodtsova, I.V.; Di Toro, M.

    2002-01-01

    Dynamical effects in the initial phase of fusion reactions are studied following the evolution of two colliding 100 Mo ions. The role of elastic forces associated with the Fermi-surface deformation is shown by comparing the results obtained with and without taking the memory effects into account. The Bass barrier separating fused and scattered configurations and the lower bound for the extra push energy are estimated. Examples of cases are shown in which the excitation energy and deformation dependence of the friction parameter are fictitious and simulate the effects of collective motion related with the Fermi-surface deformations

  5. Quantum effects in ion implanted devices

    International Nuclear Information System (INIS)

    Jamieson, D.N.; Chan, V.; Hudson, F.E.; Andresen, S.E.; Yang, C.; Hopf, T.; Hearne, S.M.; Pakes, C.I.; Prawer, S.; Gauja, E.; Yang, C.; Dzurak, A.S.; Yang, C.; Clark, R.G.; Yang, C.

    2005-01-01

    Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because it will be necessary to control quantum states at the level of individual atoms, electrons or photons. We have developed a pathway to the construction of quantum devices using ion implantation and demonstrate, using charge transport analysis, that the devices exhibit single electron effects. We construct devices that employ two P donors in Si by employing the technique of ion beam induced charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon by monitoring on-substrate detector electrodes. We have used IBIC with a MeV nuclear microprobe to map and measure the charge collection efficiency in the development of the electrode structure and show that 100% charge collection efficiency can be achieved leading to the fabrication of prototype devices that display quantum effects in the transport of single charge quanta between the islands of implanted donors. (author). 9 refs., 4 figs., 1 tab

  6. Size effects in lithium ion batteries

    International Nuclear Information System (INIS)

    Yao Hu-Rong; Yin Ya-Xia; Guo Yu-Gao

    2016-01-01

    Size-related properties of novel lithium battery materials, arising from kinetics, thermodynamics, and newly discovered lithium storage mechanisms, are reviewed. Complementary experimental and computational investigations of the use of the size effects to modify electrodes and electrolytes for lithium ion batteries are enumerated and discussed together. Size differences in the materials in lithium ion batteries lead to a variety of exciting phenomena. Smaller-particle materials with highly connective interfaces and reduced diffusion paths exhibit higher rate performance than the corresponding bulk materials. The thermodynamics is also changed by the higher surface energy of smaller particles, affecting, for example, secondary surface reactions, lattice parameter, voltage, and the phase transformation mechanism. Newly discovered lithium storage mechanisms that result in superior storage capacity are also briefly highlighted. (topical review)

  7. Effect of ion viscosity on neoclassical tearing mode

    International Nuclear Information System (INIS)

    Yoshida, Shigeki; Itoh, Sanae-I.; Yagi, Masatoshi; Azumi, Masafumi

    2004-01-01

    Linear stability analysis of neoclassical tearing mode (NTM) is performed on the basis of four-field reduced magnetohydrodynamic (MHD) model which takes account of fluctuating ion parallel flow and ion neoclassical viscosity. The dependence of the growth rate on the kinetic effects is investigated. It is shown that the linear NTM is stabilized by ion neoclassical viscosity and that the stabilizing effect of ion parallel compressibility is weak in the banana-plateau regime. It is found that not only ion neoclassical viscosity but also both ion and electron diamagnetic effects are important for the stabilization of NTM. (author)

  8. Evaluation of secondary ion yield enhancement from polymer material by using TOF-SIMS equipped with a gold cluster ion source

    Energy Technology Data Exchange (ETDEWEB)

    Aimoto, K. [Department of Applied Physics, Faculty of Engineering, Seikei University, 3-3-1 Kichijioji-Kitamachi, Musashino-shi, Tokyo 180-8633 (Japan)]. E-mail: dm053502@cc.seikei.ac.jp; Aoyagi, S. [Department of Regional Development, Faculty of Life and Environmental Science, Shimane University, 1060 Nishikawatsu-cho, Matsue-shi, Shimane 690-8504 (Japan); Kato, N. [Department of Applied Physics, Faculty of Engineering, Seikei University, 3-3-1 Kichijioji-Kitamachi, Musashino-shi, Tokyo 180-8633 (Japan); Iida, N. [ULVAC-PHI, Inc., 370 Enzo, Chigasaki, Kanagawa 253-0084 (Japan); Yamamoto, A. [ULVAC-PHI, Inc., 370 Enzo, Chigasaki, Kanagawa 253-0084 (Japan); Kudo, M. [Department of Applied Physics, Faculty of Engineering, Seikei University, 3-3-1 Kichijioji-Kitamachi, Musashino-shi, Tokyo 180-8633 (Japan)

    2006-07-30

    We investigated the enhancement of the secondary ion intensity in the TOF-SIMS spectra obtained by Au{sup +} and Au{sub 3} {sup +} bombardment in comparison with Ga{sup +} excitation using polymer samples with different molecular weight distributions. Since the polymer samples used in this experiment have a wide molecular weight distribution, the advantages of the gold cluster primary ion source over monoatomic ion could accurately be evaluated. It was observed that the degree of fragmentation decreased by the usage of cluster primary ion beam compared with monoatomic ion beam, which was observed as a shift of the intensity distribution in the spectra. It was also found out that the mass effect of Au{sup +} and Ga{sup +} as monoatomic primary ion, resulted in about 10-60 times of enhancement for both samples with different molecular distributions. On the other hand, the Au{sub 3} {sup +} bombardment caused intensity enhancement about 100-2600 compared with Ga{sup +} bombardment, depending on the mass range of the detected secondary ion species. The cluster primary ion effect of Au{sub 3} {sup +}, compared with Au{sup +}, therefore, was estimated to be about 10-45.

  9. Genetic effects of heavy ion irradiation in maize and soybean

    International Nuclear Information System (INIS)

    Yatou, Osamu; Amano, Etsuo; Takahashi, Tan.

    1992-01-01

    Somatic mutation on leaves of maize and soybean were observed to investigate genetic effects of heavy ion irradiation. Maize seeds were irradiated with N, Fe and U ions and soybean seeds were irradiated with N ions. This is a preliminary report of the experiment, 1) to examine the mutagenic effects of the heavy ion irradiation, and 2) to evaluate the genetic effects of cosmic ray exposure in a space ship outside the earth. (author)

  10. Quantum effects in ion implanted devices

    International Nuclear Information System (INIS)

    Jamieson, D.N.; Chan, V.; Hudson, F.E.; Andresen, S.E.; Yang, C.; Hopf, T.; Hearne, S.M.; Pakes, C.I.; Prawer, S.; Gauja, E.; Dzurak, A.S.; Clark, R.G.

    2006-01-01

    Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because of the need to control quantum states at the level of individual atoms, electrons or photons. We have used ion implantation to fabricate devices on the scale of 10 nm that have allowed the development and test of nanocircuitry for the control of charge transport at the level of single electrons. This fabrication method is compatible with the construction of devices that employ counted P dopants in Si by employing the technique of ion beam induced charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon substrates by monitoring on-substrate detector electrodes. We have used IBIC with a MeV nuclear microprobe to map and measure the charge collection efficiency in the development of the electrode structure and show that 100% charge collection efficiency can be achieved. Prototype devices fabricated by this method have been used to investigate quantum effects in the control and transport of single electrons with potential applications to solid state quantum information processing devices

  11. Chemical Bonding States of TiC Films before and after Hydrogen Ion Irradiation

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    TiC films deposited by rf magnetron sputtering followed by Ar+ ion bombardment were irradiated with a hydrogen ion beam. X-ray photoelectron spectroscopy (XPS) was used for characterization of the chemical bonding states of C and Ti elements of the TiC films before and after hydrogen ion irradiation, in order to understand the effect of hydrogen ion irradiation on the films and to study the mechanism of hydrogen resistance of TiC films. Conclusions can be drawn that ion bombardment at moderate energy can cause preferential physical sputtering of carbon atoms from the surface of low atomic number (Z) material. This means that ion beam bombardment leads to the formation of a non-stoichiometric composition of TiC on the surface.TiC films prepared by ion beam mixing have the more excellent characteristic of hydrogen resistance. One important cause, in addition to TiC itself, is that there are many vacant sites in TiC created by ion beam mixing.These defects can easily trap hydrogen and effectively enhance the effect of hydrogen resistance.

  12. Sputtering of solid deuterium by He-ions

    DEFF Research Database (Denmark)

    Schou, Jørgen; Stenum, B.; Pedrys, R.

    2001-01-01

    Sputtering of solid deuterium by bombardment of 3He+ and 4He+ ions was studied. Some features are similar to hydrogen ion bombardment of solid deuterium, but for the He-ions a significant contribution of elastic processes to the total yield can be identified. The thin-film enhancement is more pro...... pronounced than that for hydrogen projectiles in the same energy range....

  13. Enhancement of the secondary ion emission from Si by O/sub 2 and H/sub 2/O adsorption

    International Nuclear Information System (INIS)

    Huan, C.H.; Wee, A.T.S.; Tan, K.L.

    1992-01-01

    The positive and negative secondary ion emission of Si are examined as a function of O/sub 2 and H/sub 2/O surface coverage under conditions of simultaneous adsorption and Ar/sup+ ion bombardment. It is found that the ion-molecule mechanism accounts for the adsorbate-induced signals and that yield enhancement by H/sub 2/O adsorption is less effective than O/sub 2 adsorption. (authors)

  14. Studying of ion implantation effect on the biology in China

    International Nuclear Information System (INIS)

    Yu Zengliang

    1993-04-01

    Since low energy ion effect on the biology was observed, the ion implantation as a new mutagenic source has been widely used in improving crops and modifying microbes in China. The basic phenomenon of ion implantation effect on the biology and analytical results are reported, and the examples of its application and its further development are shown

  15. Oxygen effect of E.coli K-12 with different repair genotype at the bombardment by neutrons and γ-rays

    International Nuclear Information System (INIS)

    Komova, O.V.; Golovacheva, E.V.

    1986-01-01

    It is shown that the value of oxygen enhancement ratio (OER) depends essentually on repair possibilities of cells E.coli K-12 at 137 Cs - γ-irradiation. It increases in a range of investigated strains rec A - uvr A - → rec A - → wild type → pol A - . These differences disappear under action of fast neutron fission spectra with 0.75 MeV mean energy. OER values for all strains have been reduced in this case, and double mutant rec A - uvr A - practically has not any oxygen effects

  16. Multiple ionization and coupling effects in L-subshell ionization of heavy atoms by oxygen ions

    International Nuclear Information System (INIS)

    Pajek, M.; Banas, D.; Semaniak, J.; Braziewicz, J.; Majewska, U.; Chojnacki, S.; Czyzewski, T.; Fijal, I.; Jaskola, M.; Glombik, A.; Kretschmer, W.; Trautmann, D.; Lapicki, G.; Mukoyama, T.

    2003-01-01

    The multiple-ionization and coupling effects in L-shell ionization of atoms by heavy-ion impact have been studied by measuring the L x-ray production cross sections in solid targets of Au, Bi, Th, and U bombarded by oxygen ions in the energy range 6.4-70 MeV. The measured L x-ray spectra were analyzed using the recently proposed method accounting for the multiple-ionization effects, such as x-ray line shifting and broadening, which enables one to obtain the ionization probabilities for outer shells. The L-subshell ionization cross sections have been obtained from measured x-ray production cross sections for resolved Lα 1,2 , Lγ 1 , and Lγ 2,3 transitions using the L-shell fluorescence and Coster-Kronig yields being substantially modified by the multiple ionization in the M and N shells. In particular, the effect of closing of strong L 1 -L 3 M 4,5 Coster-Kronig transitions in multiple-ionized atoms was evidenced and discussed. The experimental ionization cross sections for the L 1 , L 2 , and L 3 subshells have been compared with the predictions of the semiclassical approximation (SCA) and the ECPSSR theory that includes the corrections for the binding-polarization effect within the perturbed stationary states approximation, the projecticle energy loss, and Coulomb deflection effects as well as the relativistic description of inner-shell electrons. These approaches were further modified to include the L-subshell couplings within the ''coupled-subshell model'' (CSM). Both approaches, when modified for the coupling effects, are in better agreement with the data. Particularly, the predictions of the SCA-CSM calculations reproduce the experimental L-subshell ionization cross section reasonably well. Remaining discrepancies are discussed qualitatively, in terms of further modifications of the L-shell decay rates caused by a change of electronic wave functions in multiple-ionized atoms

  17. Coupled channels effects in heavy ion elastic scattering

    International Nuclear Information System (INIS)

    Bond, P.D.

    1977-01-01

    The effects of inelastic excitation on the elastic scattering of heavy ions are considered within a coupled channels framework. Both Coulomb and nuclear excitation results are applied to 18 O + 184 W and other heavy ion reactions

  18. Stress, microstructure and evolution under ion irradiation in thin films grown by ion beam sputtering: modelling and application to interfacial effects in metallic multilayers

    International Nuclear Information System (INIS)

    Debelle, A.

    2006-09-01

    We have investigated the formation of the interfacial chemical mixing in Mo/Ni multilayers, and particularly the influence of ballistic effects during the growth. For this purpose, hetero-epitaxial b.c.c./f.c.c. Mo(110)/Ni(111) multilayers were grown by two deposition methods: thermal evaporation and direct ion beam sputtering. As a preliminary, an accurate description of the stress state in pure sputtered Mo thin films was required. Microstructural and stress state analyses were essentially carried out by X-ray diffraction, and ion irradiation was used as a powerful tool to control the stress level. We showed that thermal evaporated thin films exhibit a weak tensile growth stress (∼ 0.6 GPa) that can be accounted for by the grain boundary relaxation model, whereas sputtered thin films develop large compressive growth stress (- 2 to - 4 GPa). This latter results from the bombardment of the growing film by the energetic particles involved during the sputtering process (atomic peening phenomenon), which induces the formation of defects in the layers, generating volume distortions. We thus developed a stress model that includes a hydrostatic stress component to account for these volume strains. This model allowed us to determine the 'unstressed and free of defects lattice parameter' a 0 , solely linked to chemical effects. For epitaxial Mo layers, it was possible to separate coherency stress from growth stress due to their distinct kinetic evolution during ion irradiation. Therefore, the stress analysis enabled us to determine the a 0 values in Mo sub-layers of Mo/Ni superlattices. A tendency to the formation of an interfacial alloy is observed independently of the growth conditions, which suggests that thermodynamic forces favour the exchange mechanism. However, the extent of the intermixing effect is clearly enhanced by ballistic effects. (author)

  19. Beryllium dust generation resulting from plasma bombardment

    International Nuclear Information System (INIS)

    Doerner, R.; Mays, C.

    1997-01-01

    The beryllium dust resulting from erosion of beryllium samples subjected to plasma bombardment has been measured in PISCES-B. Loose surface dust was found to be uniformly distributed throughout the device and accounts for 3% of the eroded material. A size distribution measurement of the loose surface dust shows an increasing number of particles with decreasing diameter. Beryllium coatings on surfaces with a line of sight view of the target interaction region account for an additional 33% of the eroded beryllium material. Flaking of these surface layers is observed and is thought to play a significant role in dust generation inside the vacuum vessel. (orig.)

  20. Ultrafast carrier dynamics in Br.sup.+./sup.-bombarded InP studied by time-resolved terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Němec, Hynek; Fekete, Ladislav; Kadlec, Filip; Kužel, Petr

    2008-01-01

    Roč. 78, č. 23 (2008), 235206/1-235206/7 ISSN 1098-0121 R&D Projects: GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : InP * carrier lifetime * carrier mobility * ultrafast * ion-bombardment * terahertz Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

  1. Elementary processes in plasma-surface interactions with emphasis on ions

    International Nuclear Information System (INIS)

    Zalm, P.C.

    1985-01-01

    Elementary processes occurring at solid surfaces immersed in low pressure plasmas are reviewed. In particular mechanisms leading to anisotropic or directional etching are discussed. The crucial role of ion bombardment is emphasized. First a brief summary of the interaction of (excited) neutrals, ions and electrons with targets is given. Next various aspects of sputter-etching with noble gas and reactive ions are surveyed. Finally it will be argued that synergistic effects, invoked by ion bombardment of a surface under simultaneous exposure to a reactive gas flux, are foremost important in explaining anisotropic plasma etching. It is shown that the role of the ions is not merely to stimulate the chemical reaction path but rather that the active gas flow chemically enhances the sputtering. (author)

  2. Ion emission in solids bombarded with Au{sub n}{sup +} (n = 1 - 9) clusters accelerated within the 0.15 - 1.25 MeV energy range; Emission ionique des solides a l'impact d'agregats Au{sub n}{sup +} (n=1-9) acceleres entre 0,15 et 1,25 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Wehbe, Nimer [Universite Claude Bernard Lyon-I, 43 boulevard du 11 Novembre 1918, 69622 Villeurbanne cedex (France)

    2006-06-15

    This experimental work is devoted to the study of the ion emission in solids at the impact of gold clusters of energies within 0.15 to 1.25 MeV range. The physics of ion-solid collisions and the theoretical models of sputtering of solids under ion bombardment are presented in the first chapter. The chapter no. 2 deals with the description of the experimental setup. The study of a gold target allowed to evidence the role of the size and energy of the clusters in determining the emission intensity and the mass distribution of the ions. The 4. chapter gives results from the study of cesium iodide in which the intense emission of CsI clusters could be investigated quantitatively due to multiplicity measurements. Finally, the chapter no. 5 was devoted to the study of a biologic molecule, the phenylalanine, and of a pesticide molecule, chlorosulfuron. This work evidenced the importance of clusters for surface analyses by mass spectrometry.

  3. Specific ion effects on membrane potential and the permselectivity of ion exchange membranes.

    Science.gov (United States)

    Geise, Geoffrey M; Cassady, Harrison J; Paul, Donald R; Logan, Bruce E; Hickner, Michael A

    2014-10-21

    Membrane potential and permselectivity are critical parameters for a variety of electrochemically-driven separation and energy technologies. An electric potential is developed when a membrane separates electrolyte solutions of different concentrations, and a permselective membrane allows specific species to be transported while restricting the passage of other species. Ion exchange membranes are commonly used in applications that require advanced ionic electrolytes and span technologies such as alkaline batteries to ammonium bicarbonate reverse electrodialysis, but membranes are often only characterized in sodium chloride solutions. Our goal in this work was to better understand membrane behaviour in aqueous ammonium bicarbonate, which is of interest for closed-loop energy generation processes. Here we characterized the permselectivity of four commercial ion exchange membranes in aqueous solutions of sodium chloride, ammonium chloride, sodium bicarbonate, and ammonium bicarbonate. This stepwise approach, using four different ions in aqueous solution, was used to better understand how these specific ions affect ion transport in ion exchange membranes. Characterization of cation and anion exchange membrane permselectivity, using these ions, is discussed from the perspective of the difference in the physical chemistry of the hydrated ions, along with an accompanying re-derivation and examination of the basic equations that describe membrane potential. In general, permselectivity was highest in sodium chloride and lowest in ammonium bicarbonate solutions, and the nature of both the counter- and co-ions appeared to influence measured permselectivity. The counter-ion type influences the binding affinity between counter-ions and polymer fixed charge groups, and higher binding affinity between fixed charge sites and counter-ions within the membrane decreases the effective membrane charge density. As a result permselectivity decreases. The charge density and polarizability

  4. Specific ion effects on membrane potential and the permselectivity of ion exchange membranes

    KAUST Repository

    Geise, Geoffrey M.

    2014-08-26

    © the Partner Organisations 2014. Membrane potential and permselectivity are critical parameters for a variety of electrochemically-driven separation and energy technologies. An electric potential is developed when a membrane separates electrolyte solutions of different concentrations, and a permselective membrane allows specific species to be transported while restricting the passage of other species. Ion exchange membranes are commonly used in applications that require advanced ionic electrolytes and span technologies such as alkaline batteries to ammonium bicarbonate reverse electrodialysis, but membranes are often only characterized in sodium chloride solutions. Our goal in this work was to better understand membrane behaviour in aqueous ammonium bicarbonate, which is of interest for closed-loop energy generation processes. Here we characterized the permselectivity of four commercial ion exchange membranes in aqueous solutions of sodium chloride, ammonium chloride, sodium bicarbonate, and ammonium bicarbonate. This stepwise approach, using four different ions in aqueous solution, was used to better understand how these specific ions affect ion transport in ion exchange membranes. Characterization of cation and anion exchange membrane permselectivity, using these ions, is discussed from the perspective of the difference in the physical chemistry of the hydrated ions, along with an accompanying re-derivation and examination of the basic equations that describe membrane potential. In general, permselectivity was highest in sodium chloride and lowest in ammonium bicarbonate solutions, and the nature of both the counter- and co-ions appeared to influence measured permselectivity. The counter-ion type influences the binding affinity between counter-ions and polymer fixed charge groups, and higher binding affinity between fixed charge sites and counter-ions within the membrane decreases the effective membrane charge density. As a result permselectivity decreases. The

  5. Effects of crystalline structure in the transmission of ions through thin foils

    International Nuclear Information System (INIS)

    Archubi, Claudio

    2005-01-01

    Two fundamental aspects of ion transmission through thin foils are analyzed in this thesis.1) Energy loss.2) Angular distribution.The subject is studied in three different approaches: Theoretically, experimentally and by numerical simulations.In the theoretical approach, the models for the calculation of the energy loss and angular distribution are discussed.They are showed to be unsatisfactory to explain the effects of crystalline structure at low energies.A model is developed to estimate the angular dispersion due to the elastic scattering between the projectile and the target electrons. Simultaneously, angular distribution and energy loss measurements have been performed bombarding polycrystalline and monocrystalline gold and polycrystalline aluminum targets with protons and helium ions with energies in the range of 4-10 keV, together with a detailed study of the foils by electron transmission microscopy techniques.The experimental results are compared with the results of a numerical simulation code, modified and extended in the scope of this thesis.The results show an important influence of crystalline structure and the different targets defects in the angular distribution.This influence is much lower in the case of the angular behaviour of the energy loss (being almost negligible in the case of protons).The most relevant characteristic of the angular behaviour of the energy loss in the case of helium ions is that it is necessary to assume in the simulation method an impact parameter dependence of the stopping coefficient to obtain an agreement between simulation and experimental results [es

  6. Collisional effects on ion energy and angular distributions incident on RF-biased electrodes

    International Nuclear Information System (INIS)

    Qiu Huatan; Wang Younian; Ma Tengcai

    2002-01-01

    Taking into account elastic collisions and charge-exchange collisions between ions and neutral particles, the authors established a self-consistent model describing the dynamics of radio-frequency (RF) sheath driven by a sinusoidal current source, and also, using the Monte-Carlo Method, simulated energy and angle distributions of ions bombarding on RF-biased substrates. It has been shown from numerical results that as increasing the discharge pressure, bimodal-peaks distributions for the ion energy become gradually a single-peak distribution, and low-energy ions increase. The authors also found that the angle distribution of ions is narrow and almost do not change with increasing the discharge pressure

  7. Effects of ion irradiation on the residual stresses in Cr thin films

    International Nuclear Information System (INIS)

    Misra, A.; Fayeulle, S.; Kung, H.; Mitchell, T.E.; Nastasi, M.

    1998-01-01

    Cr films sputtered onto {100}thinspSi substrates at room temperature were found to be under residual tension, as revealed by wafer curvature measurements. A 150 nm thick Cr film was bombarded with 300 keV Ar ions after deposition. The intrinsic residual tensile stress increased slightly and then decreased with further increase in the ion dose. For ion doses >1x10 15 thinspions/cm 2 , the stress in the film became compressive and increased with increasing dose. Transmission electron microscopy revealed that the grain boundaries in as-deposited Cr have columnar porosity. A Cr film, ion irradiated to a dose of 5x10 15 thinspions/cm 2 , showed no grain boundary porosity. The changes in the residual stress during ion irradiation are explained by considering Ar incorporation in the film and the manner in which irradiation may change the interatomic distances and forces. copyright 1998 American Institute of Physics

  8. Ion beam effects on the surface and near-surface composition of TaSi2

    International Nuclear Information System (INIS)

    Valeri, S.; Di Bona, A.; Ottaviani, G.; Procop, M.

    1991-01-01

    Low-energy (0.7-4.5 keV) ion bombardment effects on polycrystalline TaSi 2 at sputter steady state and in various intermediate steps have been investigated, in the temperature range up to 550degC, to determine the time and temperature dependence of the altered layer formation. This in turn enables a better knowledge of the synergistic effects of the processes mentioned above. At low temperatures (T≤410degC) the surface is silicon depleted, and the depletion is even more severe in the subsurface region up to a depth of several tens of angstroems; silicon preferential sputtering and radiation-enhanced segregation assisted by the displacement mixing-induced motion of atoms are assumed to be responsible for this composition profile, while thermally activated diffusion processes become operative above 410degC, reducing progressively the concentration gradient between the surface and the subsurface zone. The composition at different depths has been determined from Auger peaks for different kinetic energies, by varying the take-off angle and finally by sputter profiling at low in energy the high energy processed surfaces. Quantitative analysis has been performed by XPS and AES by using the elemental standard method. (orig.)

  9. Electrochemically assisted fast-atom-bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Phillips, L.R.

    1988-01-01

    The hybridization of electrochemistry and fast atom bombardment (FAB) mass spectrometry (MS) creates a new hyphenated technique, referred to as electrochemically assisted FAB (EFAB) MS, which improves the applicability of FAB MS in selectivity and extends the range of compounds to include low polarity molecules, and also reduces mass spectral complications due to matrix-related artifacts. FAB MS has proven to be indispensable in analysis of samples that are otherwise too intractable for conventional MS, such as peptides, oligosaccharides, and oligonucleotides, due to low volatility and ready thermal degradation. There are limits on its applicability, however, in that it works best with samples that are already ionic, or predisposed to become so by simple proton transfer to or from the matrix. A wide range of chemical substances can be ionized/analyzed by electrochemical methods. Therefore, a possible approach towards improving applicability of FAB MS is through its hybridization with electrochemistry. Samples are activated by electrolysis, carried out directly in the sample matrix through use of a modified FAB sample probe which was constructed containing a small electrolytic cell on the tip. In operation, one electrode is held at normal sample-probe/ion-source voltage, while the other electrode can be continuously varied ±15 volts to create electrochemical potentials. Several chemical substances, known to be unresponsive to FAB MS, have been examined by EFAB MS. Resultant spectra generally show a dramatic increases in signal/chemical noise ratio of structurally significant ions when compared to normal FAB spectra

  10. Ion feedback effect in the multi GEM structure

    International Nuclear Information System (INIS)

    Park, Se Hwan; Kim, Yong Kyun; Han, Sang Hyo; Ha, Jang Ho; Moon, Byung Soo; Chung, Chong Eun

    2003-01-01

    The feedback of positive ions in a gas electron multiplier (GEM) has to be suppressed to reduce the photocathode degradation in GEM photomultipliers and to prevent the field distortion in a time projection chamber (TPC). The ion feedback dependency on the drift electric field, the transfer field, the asymmetry in the voltages across the GEM, and the effective gain was carefully measured in various gases. The ion feedback is sensitive to the drift field and the effective gain. A model prediction of the ion feedback in a double GEM structure was compared with the measurement. Our systematic study of the ion feedback effect can lead to progress in gas detectors with GEMs.

  11. Effects of oxygen gas flow rate and ion beam plasma conditions on the opto-electronic properties of indium molybdenum oxide films fabricated by ion beam-assisted evaporation

    International Nuclear Information System (INIS)

    Kuo, C.C.; Liu, C.C.; Lin, C.C.; Liou, Y.Y.; He, J.L.; Chen, F.S.

    2008-01-01

    The purpose of the present work is to experimentally study the effects of the oxygen gas flow rate and ion beam plasma conditions on the properties of indium molybdenum oxide (IMO) films deposited onto the polyethersulfone (PES) substrate. Crystal structure, surface morphology, and optoelectronic properties of IMO films are examined as a function of oxygen gas flow rate and ion beam discharge voltage. Experimental results show that the IMO films consist of a cubic bixbyite B-In 2 O 3 single phase with its crystal preferred orientation alone B(222). Mo 6+ ions are therefore considered to partially substitute In 3+ sites in the deposit. Under-controlled ion bombardment during deposition enhances the reaction among those arriving oxygen and metal ion species to condense into IMO film and facilitates a decreased surface roughness of IMO film. The film with ultimate crystallinity and the lowest surface roughness is obtained when the oxygen flow rate of 3 sccm and the discharge voltage of 110 V are employed. This results in the lowest electrical resistivity due mainly to the increased Hall mobility and irrelevant to carrier concentration. The lowest electrical resistivity of 8.63 x 10 -4 ohm-cm with a 84.63% transmittance at a wavelength of 550 nm can be obtained, which satisfies the requirement of a flexible transparent conductive polymer substrate

  12. Graphene defects induced by ion beam

    Science.gov (United States)

    Gawlik, Grzegorz; Ciepielewski, Paweł; Baranowski, Jacek; Jagielski, Jacek

    2017-10-01

    The CVD graphene deposited on the glass substrate was bombarded by molecular carbon ions C3+ C6+ hydrocarbon ions C3H4+ and atomic ions He+, C+, N+, Ar+, Kr+ Yb+. Size and density of ion induced defects were estimated from evolution of relative intensities of Raman lines D (∼1350 1/cm), G (∼1600 1/cm), and D‧ (∼1620 1/cm) with ion fluence. The efficiency of defect generation by atomic ions depend on ion mass and energy similarly as vacancy generation directly by ion predicted by SRIM simulations. However, efficiency of defect generation in graphene by molecular carbon ions is essentially higher than summarized efficiency of similar group of separate atomic carbon ions of the same energy that each carbon ion in a cluster. The evolution of the D/D‧ ratio of Raman lines intensities with ion fluence was observed. This effect may indicate evolution of defect nature from sp3-like at low fluence to a vacancy-like at high fluence. Observed ion graphene interactions suggest that the molecular ion interacts with graphene as single integrated object and should not be considered as a group of atomic ions with partial energy.

  13. Comments on Auger electron production by Ne/sup +/ bombardment of surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Pepper, S V; Ferrante, J [National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center

    1979-09-01

    In this letter, the authors first report rather conclusive experimental evidence showing that the Ne Auger signal is due to asymmetric Ne-metal collisions and not symmetric Ne-Ne collisions. Next it is shown that the Ne Auger signal is in fact observable by Ne/sup +/ bombardment of Si and with signal strength comparable to that of the Si Auger signal for 3 keV incident ion energy. Finally, they comment on some trends in the relative amplitudes of the 21.9 and 25.1 eV Ne Auger signals as a function of incident ion energy and target species.

  14. Ion induced x-ray emission

    International Nuclear Information System (INIS)

    Cohen, D.D.

    1983-01-01

    Three types of perturbation theory have been used to describe inner shell vacancy production by light to medium ion bombardment. Inclusion of Coulomb deflection and binding effects in the plane wave Born approximation is discussed. More recently this relativistic Coulomb deflection corrected perturbed stationary state theory has been extended to include energy loss effects. This ECPSSR theory is one of the most successful in predicting inner shell ionisation cross sections for both K and L shells, provided the projectile to target atomic number ratio is less than about 0.3 and, for the heavier ions, electron capture processes by the projectile are included

  15. Quantum electrodynamical effects in heavy highly-charged ions

    International Nuclear Information System (INIS)

    Yerokhin, V.A.; Artemyev, A.N.; Indelicato, P.; Shabaev, V.M.

    2003-01-01

    The present status of theoretical calculations of QED effects in highly charged ions is reviewed for several important cases: the Lamb shift in heavy H-like ions, the 2p 1/2 -2s transition energy in heavy Li-like ions, and the bound-electron g factor in H-like ions. Theoretical predictions are compared with experimental results. Special attention is paid to the discussion of uncertainties of theoretical predictions

  16. Cytological effect of nitrogen ion implantation into Stevia

    International Nuclear Information System (INIS)

    Shen Mei; Wang Cailian; Chen Qiufang; Lu Ting; Shu Shizhen

    1997-01-01

    Dry seeds of Stevia were implanted by 35∼150 keV nitrogen ion with various doses. The cytological effect on M 1 was studied. The results showed that nitrogen ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with the increased with the increase of ion beam energy and dose. However, there was no significant linear regression relationship between ion dose and aberration rate. The cytological effect of nitrogen ion implantation was lower than that of γ-rays

  17. The timeline of the lunar bombardment: Revisited

    Science.gov (United States)

    Morbidelli, A.; Nesvorny, D.; Laurenz, V.; Marchi, S.; Rubie, D. C.; Elkins-Tanton, L.; Wieczorek, M.; Jacobson, S.

    2018-05-01

    The timeline of the lunar bombardment in the first Gy of Solar System history remains unclear. Basin-forming impacts (e.g. Imbrium, Orientale), occurred 3.9-3.7 Gy ago, i.e. 600-800 My after the formation of the Moon itself. Many other basins formed before Imbrium, but their exact ages are not precisely known. There is an intense debate between two possible interpretations of the data: in the cataclysm scenario there was a surge in the impact rate approximately at the time of Imbrium formation, while in the accretion tail scenario the lunar bombardment declined since the era of planet formation and the latest basins formed in its tail-end. Here, we revisit the work of Morbidelli et al. (2012) that examined which scenario could be compatible with both the lunar crater record in the 3-4 Gy period and the abundance of highly siderophile elements (HSE) in the lunar mantle. We use updated numerical simulations of the fluxes of asteroids, comets and planetesimals leftover from the planet-formation process. Under the traditional assumption that the HSEs track the total amount of material accreted by the Moon since its formation, we conclude that only the cataclysm scenario can explain the data. The cataclysm should have started ∼ 3.95 Gy ago. However we also consider the possibility that HSEs are sequestered from the mantle of a planet during magma ocean crystallization, due to iron sulfide exsolution (O'Neil, 1991; Rubie et al., 2016). We show that this is likely true also for the Moon, if mantle overturn is taken into account. Based on the hypothesis that the lunar magma ocean crystallized about 100-150 My after Moon formation (Elkins-Tanton et al., 2011), and therefore that HSEs accumulated in the lunar mantle only after this timespan, we show that the bombardment in the 3-4 Gy period can be explained in the accretion tail scenario. This hypothesis would also explain why the Moon appears so depleted in HSEs relative to the Earth. We also extend our analysis of the

  18. Electron-ion correlation effects in ion-atom single ionization

    Energy Technology Data Exchange (ETDEWEB)

    Colavecchia, F.D.; Garibotti, C.R. [Centro Atomico Bariloche and Consejo Nacional de Investigaciones Cientificas y Tecnicas, 8400 San Carlos de Bariloche (Argentina); Gasaneo, G. [Departamento de Fisica, Universidad Nacional del Sur, Av. Alem 1253, 8000 Bahia Blanca (Argentina)

    2000-06-28

    We study the effect of electron-ion correlation in single ionization processes of atoms by ion impact. We present a distorted wave model where the final state is represented by a correlated function solution of a non-separable three-body continuum Hamiltonian, that includes electron-ion correlation as coupling terms of the wave equation. A comparison of the electronic differential cross sections computed with this model with other theories and experimental data reveals that the influence of the electron-ion correlation is more significant for low energy emitted electrons. (author). Letter-to-the-editor.

  19. Effects of Ion Bombardment and Heat Treatment on Surface Topography and Hardeniability of The Cu-1.5 wt.% Sb Alloy

    International Nuclear Information System (INIS)

    Habib, S.K.; Rizk, A.; Saad, J.; Soliman, H.N.; Fayek, S.A.

    2010-01-01

    Specimens of the Cu-1.5 wt.% Sb alloy were prepared and subjected to different heat treatments to obtain specimens with different grain diameters. These were sputtered separately in argon glow discharge using a de magnetron sputtering system. Scanning electron microscopy was used for examining surface topography while EDS for determination of the elemental composition. The hardness of the specimens under investigation was measured under different conditions of testing. The results showed that both hardness and surface topography of the given alloy are greatly affected by grain diameter and sputtering time.

  20. Effects of energetic heavy ions on electromagnetic ion cyclotron wave generation in the plasmapause region

    International Nuclear Information System (INIS)

    Kozyra, J.U.; Cravens, T.E.; Nagy, A.F.; Fontheim, E.G.; Ong, R.S.B.

    1984-01-01

    An expression for the linear electromagnetic ion cyclotron convective growth rate has been derived, considering multiple ions in the energetic anisotropic component of the plasma (which provides the free energy for the instability) as well as in the cold component of the plasma. This represents a modification of recent treatments investigating electromagnetic ion cyclotron growth rates which have considered only hydrogen ions in the energetic component. Four major effects on the growth and propagation characteristics result from inclusion of heavy ions in the energetic component. Some wave growth occurs at low frequencies below the corresponding marginally unstable wave mode for each heavy ion. Enhanced quasi-monochronomatic peaks in the convective growth rate appear just below the O + and He + gyrofrequency and can be quite pronounced for certain plasma conditions. Stop bands, decreased group velocity and other effects normally attributed to cold heavy ions can be produced or enhanced by heavy ions in the energetic plasma component. Partial or complete suppression of wave growth at frequencies above the marginally unstable wave mode for a particular energetic heavy ion can greatly alter the growth rates that would occur in the absence of this energetic heavy ion. The expression for the linear electromagnetic ion cyclotron convective growth rate along with appropriate plasma parameters was used to investigate the nature of linear wave growth in the plasmapause region. The frequencies of peaks in the convective growth rate given by this model compare favorably with wave measurements in this region. It is conceivable that through wave-particle interactions, electromagnetic ion cyclotron waves could supply the energy source for various plasmapause region phenomena such as the O + torus, the plasma cloak and stable auroral red arcs

  1. Beam Angular Divergence Effects in Ion Implantation

    International Nuclear Information System (INIS)

    Horsky, T. N.; Hahto, S. K.; Bilbrough, D. G.; Jacobson, D. C.; Krull, W. A.; Goldberg, R. D.; Current, M. I.; Hamamoto, N.; Umisedo, S.

    2008-01-01

    An important difference between monomer ion beams and heavy molecular beams is a significant reduction in beam angular divergence and increased on-wafer angular accuracy for molecular beams. This advantage in beam quality stems from a reduction in space-charge effects within the beam. Such improved angular accuracy has been shown to have a significant impact on the quality and yield of transistor devices [1,12]. In this study, B 18 H x + beam current and angular divergence data collected on a hybrid scanned beam line that magnetically scans the beam across the wafer is presented. Angular divergence is kept below 0.5 deg from an effective boron energy of 200 eV to 3000 eV. Under these conditions, the beam current is shown analytically to be limited by space charge below about 1 keV, but by the matching of the beam emittance to the acceptance of the beam line above 1 keV. In addition, results of a beam transport model which includes variable space charge compensation are presented, in which a drift mode B 18 H x + beam is compared to an otherwise identical boron beam after deceleration. Deceleration is shown to introduce significant space-charge blow up resulting in a large on-wafer angular divergence. The divergence effects introduced by wafer charging are also discussed.

  2. Damage accumulation in ceramics during ion implantation

    International Nuclear Information System (INIS)

    McHargue, C.J.; Farlow, G.C.; Begun, G.M.; Williams, J.M.; White, C.W.; Appleton, B.R.; Sklad, P.S.; Angelini, P.

    1985-01-01

    The damage structures of α-Al 2 O 3 and α-SiC were examined as functions of ion implantation parameters using Rutherford backscattering-channeling, analytical electron microscopy, and Raman spectroscopy. Low temperatures or high fluences of cations favor formation of the amorphous state. At 300 0 K, mass of the bombarding species has only a small effect on residual damage, but certain ion species appear to stabilize the damage microstructure and increase the rate of approach to the amorphous state. The type of chemical bonding present in the host lattice is an important factor in determining the residual damage state

  3. High energy Xe{sup +} ion beam induced ripple structures on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

    2008-07-01

    Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

  4. Edge effect correction using ion beam figuring.

    Science.gov (United States)

    Yang, Bing; Xie, Xuhui; Li, Furen; Zhou, Lin

    2017-11-10

    The edge effect is regarded as one of the most difficult technical issues for fabricating large primary mirrors, as it can greatly reduce the key performance of the optical system. Ion beam figuring (IBF) has the advantage of no edge effect, so we can use it to remove high points on the edge and improve surface accuracy. The edge local correction method (ELCM) of IBF processes only the surface edge zone, and is very different from the current full caliber figuring method (FCFM). Therefore, it is necessary to study the ELCM of IBF. In this paper, the key factors of ELCM are analyzed, such as dwell time algorithm, edge data extension methods, and the outward dimension of the starting figuring point. At the same time, the distinctions between ELCM and FCFM are compared. Finally, a 142 mm diameter fused silica mirror is fabricated to verify the validity of the theoretical of ELCM. The experimental results indicate that the figuring precision and efficiency can be obviously improved by ELCM.

  5. Effect of ion irradiation on the surface, structural and mechanical properties of brass

    Science.gov (United States)

    Ahmad, Shahbaz; Bashir, Shazia; Ali, Nisar; Umm-i-Kalsoom; Yousaf, Daniel; Faizan-ul-Haq; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

    2014-04-01

    Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 1012 to 26 × 1013 ions/cm2. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation, augmentation, recombination and annihilation of the ion-induced defects.

  6. Effects of surface relief on the high-dose sputtering of amorphous silicon and graphite by Ar ions

    International Nuclear Information System (INIS)

    Shulga, V.I.

    2014-01-01

    The effects of ion-induced surface relief on high-dose sputtering of amorphous silicon and graphite targets have been studied using binary-collision computer simulation. The relief was modeled as a wavelike surface along two mutually perpendicular surface axes (a 3D hillock-and-valley relief). Most simulations were carried out for normally-incident 30-keV Ar ions. It was shown that the surface relief can both increase and decrease the sputtering yield compared to that for a flat surface. The results of simulations suggest that stabilization of the surface relief is possible even in the absence of any smoothing processes such as surface diffusion of atoms. Effects of a surface relief on the experimentally measurable angular and energy distributions of sputtered atoms are also considered. The fitting parameters of these distributions are shown to be non-monotonic functions of the relief aspect ratio. The angular distribution of atoms sputtered from a relief surface is modulated to a great extent by the shape of the relief. For a rough surface, azimuthal isotropy of the angular distribution of sputtered atoms was found, but at high bombarding energies only

  7. Theoretical simulations of atomic and polyatomic bombardment of an organic overlayer on a metallic substrate

    CERN Document Server

    Krantzman, K D; Delcorte, A; Garrison, B J

    2003-01-01

    Our previous molecular dynamics simulations on initial test systems have laid the foundation for understanding some of the effects of polyatomic bombardment. In this paper, we describe simulations of the bombardment of a more realistic model system, an overlayer of sec-butyl-terminated polystyrene tetramers on a Ag left brace 1 1 1 right brace substrate. We have used this model system to study the bombardment with Xe and SF sub 5 projectiles at kinetic energies ranging from 0.50 to 5.0 keV. SF sub 5 sputters more molecules than Xe, but a higher percentage of these are damaged rather than ejected intact when the bombarding energy is greater than 0.50 keV. Therefore, at energies comparable to experimental values, the efficiency, measured as the yield-to-damage ratio, is greater with Xe than SF sub 5. Stable and intact molecules are generally produced by upward moving substrate atoms, while fragments are produced by the upward and lateral motion of reflected projectile atoms and fragments from the target molecul...

  8. ION EFFECTS IN THE APS PARTICLE ACCUMULATOR RING

    Energy Technology Data Exchange (ETDEWEB)

    Calvey, J.; Harkay, K.; Yao, CY.

    2017-06-25

    Trapped ions in the APS Particle Accumulator Ring (PAR) lead to a positive coherent tune shift in both planes, which increases along the PAR cycle as more ions accumulate. This effect has been studied using an ion simulation code developed at SLAC. After modifying the code to include a realistic vacuum profile, multiple ionization, and the effect of shaking the beam to measure the tune, the simulation agrees well with our measurements. This code has also been used to evaluate the possibility of ion instabilities at the high bunch charge needed for the APS-Upgrade.

  9. Biological effect of penetration controlled irradiation with ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi; Shimizu, Takashi; Kikuchi, Masahiro; Kobayashi, Yasuhiko; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Yamashita, Takao

    1997-03-01

    To investigate the effect of local irradiation with ion beams on biological systems, technique for penetration controlled irradiation has been established. The range in a target was controlled by changing the distance from beam window in the atmosphere, and could be controlled linearly up to about 31 {mu}m in biological material. In addition, the effects of the penetration controlled irradiations with 1.5 MeV/u C and He ions were examined using tobacco pollen. The increased frequency of leaky pollen produced by ion beams suggests that the efficient pollen envelope damages would be induced at the range-end of ion beams. (author)

  10. Biological effect of nitrogen ion implantation on stevia

    International Nuclear Information System (INIS)

    Wang Cailian; Shen Mei; Chen Qiufang; Shu Shizhen

    1997-10-01

    Dry seed of stevia were implanted by 35∼150 keV nitrogen ions with various doses. The biological effect in M 1 was studied. The results showed that nitrogen ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with ion beam energy and dose added, but there was on significant linear regression relationship between ion dose and aberration rate. The results indicated the seedling height reduced with the increasing of dose for ion beam. The biological effect of nitrogen ion beam on M 1 stevia was lower than that of γ-rays. (6 refs., 1 fig., 4 tabs.)

  11. Heavy Ion Irradiation Effects in Zirconium Nitride

    International Nuclear Information System (INIS)

    Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

    2004-01-01

    Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

  12. Effect of resonant microwave power on a PIG ion source

    International Nuclear Information System (INIS)

    Brown, I.G.; Galvin, J.E.; Gavin, B.F.; MacGill, R.A.

    1984-08-01

    We have investigated the effect of applying microwave power at the electron cyclotron frequency on the characteristics of the ion beam extracted from a hot-cathode PIG ion source. No change was seen in the ion charge state distribution. A small but significant reduction in the beam noise level was seen, and it is possible that the technique may find application in situations where beam quiescence is important. 29 references, 2 figures

  13. Ion beam nanopatterning and micro-Raman spectroscopy analysis on HOPG for testing FIB performances

    International Nuclear Information System (INIS)

    Archanjo, B.S.; Maciel, I.O.; Martins Ferreira, E.H.; Peripolli, S.B.; Damasceno, J.C.; Achete, C.A.; Jorio, A.

    2011-01-01

    This work reports Ga + focused ion beam nanopatterning to create amorphous defects with periodic square arrays in highly oriented pyrolytic graphite and the use of Raman spectroscopy as a new protocol to test and compare progresses in ion beam optics, for low fluence bombardment or fast writing speed. This can be ultimately used as a metrological tool for comparing different FIB machines and can contribute to Focused Ion Beam (FIB) development in general for tailoring nanostructures with higher precision. In order to do that, the amount of ion at each spot was varied from about 10 6 down to roughly 1 ion per dot. These defects were also analyzed by using high resolution scanning electron microscopy and atomic force microscopy. The sensitivities of these techniques were compared and a geometrical model is proposed for micro-Raman spectroscopy in which the intensity of the defect induced D band, for a fixed ion dose, is associated with the diameter of the ion beam. In addition, the lateral increase in the bombarded spot due to the cascade effect of the ions on graphite surface was extracted from this model. A semi-quantitative analysis of the distribution of ions at low doses per dot or high writing speed for soft modification of materials is discussed. -- Highlights: → Highly oriented pyrolytic graphite surface is bombarded using a focused ion beam. → Raman spectroscopy is used to propose a new protocol to test focused ion beam optics. → Scattering diameter of the ions on HOPG surface is experimentally obtained. → Optical limitations of the ion column in fast writing speed are discussed. → Small level of modifications is considered for changing graphene conductive properties.

  14. Space-charge effects in Penning ion traps

    Science.gov (United States)

    Porobić, T.; Beck, M.; Breitenfeldt, M.; Couratin, C.; Finlay, P.; Knecht, A.; Fabian, X.; Friedag, P.; Fléchard, X.; Liénard, E.; Ban, G.; Zákoucký, D.; Soti, G.; Van Gorp, S.; Weinheimer, Ch.; Wursten, E.; Severijns, N.

    2015-06-01

    The influence of space-charge on ion cyclotron resonances and magnetron eigenfrequency in a gas-filled Penning ion trap has been investigated. Off-line measurements with K39+ using the cooling trap of the WITCH retardation spectrometer-based setup at ISOLDE/CERN were performed. Experimental ion cyclotron resonances were compared with ab initio Coulomb simulations and found to be in agreement. As an important systematic effect of the WITCH experiment, the magnetron eigenfrequency of the ion cloud was studied under increasing space-charge conditions. Finally, the helium buffer gas pressure in the Penning trap was determined by comparing experimental cooling rates with simulations.

  15. Effect of ion implantation on apple wine yeast

    International Nuclear Information System (INIS)

    Song Andong; Chen Hongge; Zhang Shimin; Jia Cuiying

    2004-01-01

    The wild type apple wine yeast Y 02 was treated by ion implantation with the dose of 8 x 10 15 ion/cm 2 . As results, a special mutant strain, ION II -11 dry, was obtained. The morphology characters, partial biochemistry characters, mycelium protein of the mutant strain were distinctively changed compared with original strain Y 02 . After the fermentation test ,the apple wine producing rate of the mutant strain increased 22.4% compared with original strain. These results showed that ion implantation was an effective method for mutagenesis

  16. Low-energy irradiation effects of gas cluster ion beams

    International Nuclear Information System (INIS)

    Houzumi, Shingo; Takeshima, Keigo; Mochiji, Kozo; Toyoda, Noriaki; Yamada, Isao

    2007-01-01

    A cluster-ion irradiation system with cluster-size selection has been developed to study the effects of the cluster size for surface processes using cluster ions. A permanent magnet with a magnetic field of 1.2 T is installed for size separation of large cluster ions. Trace formations at HOPG surface by the irradiation with size-selected Ar-cluster ions under acceleration energy of 30 keV were investigated by a scanning tunneling microscopy. Generation behavior of the crater-like traces is strongly affected by the number of constituent atoms (cluster size) of the irradiating cluster ion. When the incident cluster ion is composed of 100-3000 atoms, crater-like traces are observed on the irradiated surfaces. In contrast, such traces are not observed at all with the irradiation of the cluster-ions composed of over 5000 atoms. Such the behavior is discussed on the basis of the kinetic energy per constituent atom of the cluster ion. To study GCIB irradiation effects against macromolecule, GCIB was irradiated on DNA molecules absorbed on graphite surface. By the GCIB irradiation, much more DNA molecules was sputtered away as compared with the monomer-ion irradiation. (author)

  17. Search for superheavy elements in the bombardment of 248Cm with 48Ca

    International Nuclear Information System (INIS)

    Hulet, E.K.; Lougheed, R.W.; Wild, J.F.; Landrum, J.H.; Stevenson, P.C.; Ghiorso, A.; Nitschke, J.M.; Otto, R.J.; Morrissey, D.J.; Baisden, P.A.; Gavin, B.F.; Lee, D.; Silva, R.J.; Fowler, M.M.; Seaborg, G.T.

    1977-01-01

    We have searched for superheavy elements 110 to 116 with half-lives between 10 4 and 10 8 s in fractions chemically separated after each of a series of bombardments of 248 Cm made with 267-MeV 48 Ca ions. After 6 months of α and spontaneous-fission counting, our results provide no persuasive evidence for the presence of super-heavy elements. The most plausible explanation for not finding the superheavy elements is that they have either short half-lives or very small formation cross sections

  18. Deformation effects in the heavy ion quarter-point angle

    International Nuclear Information System (INIS)

    Almeida, F.I.A. de; Hussein, M.S.

    1984-01-01

    The effects of static and dynamic deformation on the heavy-ion elastic scattering quarter-point angle are discussed and analyzed in the sudden approximation. Simple expressions are derived within the Fresnel model and applications to several heavy-ion systems are presented. (Author) [pt

  19. Respective effects of sodium and chloride ion on physiological ...

    African Journals Online (AJOL)

    Respective effects of sodium and chloride ion on growth, cell morphological changes, membrane disorganization, ion homeostasis, exoenzyme activities and fermentation performance in Zymomonas mobilis232B cultures were presented. In batch cultures containing 0.15 M NaCl, Z. mobilis232B developed filaments, and ...

  20. Effects of ion beam irradiation on semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Nashiyama, Isamu; Hirao, Toshio; Itoh, Hisayoshi; Ohshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)

  1. Effects of ion concentration on the hydrogen bonded structure of ...

    Indian Academy of Sciences (India)

    WINTEC

    Effects of ion concentration on the hydrogen bonded structure of water in the vicinity of ions in aqueous NaCl solutions. A NAG. 1. , D CHAKRABORTY and A CHANDRA*. Department of Chemistry, Indian Institute of Technology, Kanpur 208 016. 1. Present address: Department of Chemistry and Chemical Engineering,.

  2. METI/NEDO Projects on Cluster Ion Beam Process Technology

    International Nuclear Information System (INIS)

    Yamada, Isao; Matsuo, Jiro; Toyoda, Noriaki

    2003-01-01

    Since the initial study of gas cluster ion beams (GCIB) was started in the Ion Beam Engineering Experimental Laboratory of Kyoto University, more than 15 years have passed. Some of the results of that study have already been applied for industrial use. Unique characteristics of gas cluster ion bombardment have been found to offer potential for various other industrial applications. The impact of an accelerated cluster ion upon a target surface imparts very high energy densities into the impact area and produces non-linear effects that are not associated with the impacts of atomic ions. Among prospective applications for these effects are included shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low temperature thin film formation

  3. Measurement of ultra-low ion energy of decelerated ion beam using a deflecting electric field

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P.; Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2015-12-15

    In investigation on ultra-low-energy ion bombardment effect on DNA, an ion beam deceleration lens was developed for high-quality ultra-low-energy ion beam. Measurement of the ion energy after deceleration was necessary to confirm the ion beam really decelerated as theoretically predicted. In contrast to conventional methods, this work used a simple deflecting electrostatic field after the deceleration lens to bend the ion beam. The beam bending distance depended on the ion energy and was described and simulated. A system for the measurement of the ion beam energy was constructed. It consisted of a pair of parallel electrode plates to generate the deflecting electrical field, a copper rod measurement piece to detect ion beam current, a vernier caliper to mark the beam position, a stepping motor to translate the measurement rod, and a webcam-camera to read the beam bending distance. The entire system was installed after the ion-beam deceleration lens inside the large chamber of the bioengineering vertical ion beam line. Moving the measurement rod across the decelerated ion beam enabled to obtain beam profiles, from which the beam bending distance could be known and the ion beam energy could be calculated. The measurement results were in good agreement with theoretical and simulated results.

  4. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    Energy Technology Data Exchange (ETDEWEB)

    Koehl, Dominik

    2011-02-17

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  5. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    International Nuclear Information System (INIS)

    Koehl, Dominik

    2011-01-01

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  6. Ion thermal and dispersion effects in Farley-Buneman instabilities

    International Nuclear Information System (INIS)

    Litt, S. K.; Smolyakov, A. I.; Hassan, E.; Horton, W.

    2015-01-01

    Farley-Buneman modes are an example of the collisional instability, which is thought to be the dominant mechanism for the irregularities in low ionosphere region. Despite high collisionality due to electron-neutral and ion-neutral collisions, the kinetic effects associated with finite temperature are important for determination of the mode frequencies and growth rate. This is especially important for ion component that is largely unmagnetized due to low ion cyclotron frequency. The ion thermal effects are strongly pronounced for shorter wavelengths and are crucial for the growth rate cut-off at high wavenumbers. We develop an extended fluid model for ion dynamics to incorporate the effects of ion thermal motion. The model is based on the extended MHD model that includes the evolution equations for higher order moments such as ion viscosity and ion heat flux. We also develop the generalized Chapman-Enskog closure model that provides exact linear closures based on the linearized kinetic equation. The results of these models are compared and tested against the linear kinetic model. The dispersion of Farley-Buneman modes and growth rate behavior are investigated in the short wavelength region

  7. High fluence effects on ion implantation stopping and range

    International Nuclear Information System (INIS)

    Selvi, S.; Tek, Z.; Oeztarhan, A.; Akbas, N.; Brown, I.G.

    2005-01-01

    We have developed a code STOPPO which can be used to modify the more-widely used ion implantation codes to more accurately predict the mean nuclear and electronic stopping power, preferential sputtering and range of heavy ions in monatomic target materials. In our simulations an effective atomic number and effective atomic mass are introduced into conveniently available analytical stopping cross-sections and a better fitting function for preferential sputtering yield is carefully evaluated for each ion implantation. The accuracy of the code confirmed experimentally by comparison with measured Rutherford backscattering spectrometry (RBS) concentration profiles for 130 keV Zr ions implanted into Be to fluences of 1 x 10 17 , 2 x 10 17 and 4 x 10 17 ions/cm 2 . We find a steady increase in the mean nuclear and electronic stopping powers of the target; the increase in nuclear stopping power is much greater than the increase in electronic stopping power

  8. Study and optimisation of SIMS performed with He+ and Ne+ bombardment

    International Nuclear Information System (INIS)

    Pillatsch, L.; Vanhove, N.; Dowsett, D.; Sijbrandij, S.; Notte, J.; Wirtz, T.

    2013-01-01

    The combination of the high-brightness He + /Ne + atomic level ion source with the detection capabilities of secondary ion mass spectrometry (SIMS) opens up the prospect of obtaining chemical information with high lateral resolution and high sensitivity on the Zeiss ORION helium ion microscope (HIM). A feasibility study with He + and Ne + ion bombardment is presented in order to determine the performance of SIMS analyses using the HIM. Therefore, the sputtering yields, useful yields and detection limits obtained for metallic (Al, Ni and W) as well as semiconductor samples (Si, Ge, GaAs and InP) were investigated. All the experiments were performed on a Cameca IMS4f SIMS instrument which was equipped with a caesium evaporator and oxygen flooding system. For most of the elements, useful yields in the range of 10 −4 to 3 × 10 −2 were measured with either O 2 or Cs flooding. SIMS experiments performed directly on the ORION with a prototype secondary ion extraction and detection system lead to results that are consistent with those obtained on the IMS4f. Taking into account the obtained useful yields and the analytical conditions, such as the ion current and typical dwell time on the ORION HIM, detection limits in the at% range and better can be obtained during SIMS imaging at 10 nm lateral resolution with Ne + bombardment and down to the ppm level when a lateral resolution of 100 nm is chosen. Performing SIMS on the HIM with a good detection limit while maintaining an excellent lateral resolution (<50 nm) is therefore very promising.

  9. Ion effects in future circular and linear accelerators

    International Nuclear Information System (INIS)

    Raubenheimer, T.O.

    1995-05-01

    In this paper, the author discusses ion effects relevant to future storage rings and linear colliders. The author first reviews the conventional ion effects observed in present storage rings and then discusses how these effects will differ in the next generation of rings and linacs. These future accelerators operate in a new regime because of the high current long bunch trains and the very small transverse beam emittances. Usually, storage rings are designed with ion clearing gaps to prevent ion trapping between bunch trains or beam revolutions. Regardless, ions generated within a single bunch train can have significant effects. The same is true in transport lines and linacs, where typical vacuum pressures are relatively high. Amongst other effects, the author addresses the tune spreads due to the ions and the resulting filamentation which can severely limit emittance correction techniques in future linear colliders, the bunch-to-bunch coupling due to the ions which can cause a multi-bunch instability with fast growth rates, and the betatron coupling and beam halo creation which limit the vertical emittance and beam lifetimes

  10. Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Mingzhong [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Tian, Xiubo, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Li, Muqin [School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Gong, Chunzhi [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Wei, Ronghua [Southwest Research Institute, San Antonio, TX 78238 (United States)

    2016-07-15

    Highlights: • A novel Meshed Plasma Immersion Ion Deposition is proposed. • The deposited Si-DLC films possess denser structures and high deposition rate. • It is attributed to ion bombardment of the deposited films. • The ion energy can be independently controlled by an additional bias (novel set up). - Abstract: Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C{sub 2}H{sub 2} and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H{sup 3}/E{sup 2} and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this

  11. Mutagenic effects of nitrogen and carbon ions on stevia

    International Nuclear Information System (INIS)

    Wang Cailian; Chen Qiufang; Shen Mei; Lu Ting; Shu Shizhen

    1998-06-01

    Dry seeds of stevia were implanted by 60∼100 keV nitrogen ion and 75 keV carbon ion with various doses. The biological effects in M 1 and mutation in M 2 were studied. The results showed that ion beam was able to induce variation on chromosome structure and inhibited mitosis action in root tip cells. The rate of cells with chromosome aberration was increased with the increase of ion beam energy and dose. Energy effects of mitosis were presented between 75 keV and 60, 100 keV. As compared with γ-rays, the effects of ion beam were lower on chromosomal aberration but were higher on frequency of the mutation. The rate of cell with chromosome aberration and M 2 useful mutation induced by implantation of carbon ion was higher than those induced by implantation of nitrogen ion. Mutagenic effects of Feng 1 x Ri Yuan and of Ri Yuan x Feng 2 are higher than that of Ji Ning and Feng 2

  12. Effect of heating on the behaviors of hydrogen in C-TiC films with auger electron spectroscopy and secondary ion mass spectroscopy analyses

    International Nuclear Information System (INIS)

    Zou, Y.; Wang, L.W.; Huang, N.K.

    2007-01-01

    C-TiC films with a content of 75% TiC were prepared with magnetron sputtering deposition followed by Ar + ion bombardment. Effect of heating on the behaviors of hydrogen in C-TiC films before and after heating was studied with Auger Electron Spectroscopy and Secondary Ion Mass Spectroscopy (SIMS) analyses. SIMS depth profiles of hydrogen after H + ion implantation and thermal treatment show different hydrogen concentrations in C-TiC coatings and stainless steel. SIMS measurements show the existence of TiH, TiH 2 , CH 3 , CH 4 , C 2 H 2 bonds in the films after H + ion irradiation and the changes in the Ti LMM, Ti LMV and C KLL Auger line shape reveal that they have a good hydrogen retention ability after heating up to the temperature 393 K. All the results show that C-TiC coatings can be used as a hydrogen retainer or hydrogen permeable barrier on stainless steel to protect it from hydrogen brittleness

  13. Comparing the effect of pressure and temperature on ion mobilities

    International Nuclear Information System (INIS)

    Tabrizchi, Mahmoud; Rouholahnejad, Fereshteh

    2005-01-01

    The effect of pressure on ion mobilities has been investigated and compared with that of temperature. In this connection, an ion mobility spectrometry (IMS) cell, which employs a corona discharge as the ionization source, has been designed and constructed to allow varying pressure inside the drift region. IMS spectra were recorded at various pressures ranging from 15 Torr up to atmospheric pressure. The results show that IMS peaks shift perfectly linear with pressure which is in excellent agreement with the ion mobility theory. However, experimental ion mobilities versus temperature show deviation from the theoretical trend. The deviation is attributed to formation of clusters. The different behaviour of pressure and temperature was explained on the basis of the different impact of pressure and temperature on hydration and clustering of ions. Pressure affects the clustering reactions linearly but temperature affects it exponentially

  14. Effect of electrode materials on a negative ion production in a cesium seeded negative ion source

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Takashi; Morishita, Takutoshi; Kashiwagi, Mieko; Hanada, Masaya; Iga, Takashi; Inoue, Takashi; Watanabe, Kazuhiro; Imai, Tsuyoshi [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; Wada, Motoi [Doshisha Univ., Kyoto (Japan)

    2003-03-01

    Effects of plasma grid materials on the negative ion production efficiency in a cesium seeded ion source have been experimentally studied. Grid materials of Au, Ag, Cu, Ni, and Mo were examined. A 2.45 GHz microwave ion source was utilized in the experiment to avoid contamination of tungsten from filament cathode. Relations between the negative ion currents and work functions of the grid were measured for these materials. Influence of the contamination by tungsten on the grid was also investigated. If was clarified that the negative ion production efficiency was determined only by the work function of the grid. The efficiency did not depend on the material itself. The lowest work function of 1.42 eV was obtained for Au grid with Cs, and a high H{sup -} production efficiency of 20.7 mA/kW was measured. This efficiency is about 1.3 times larger than that of Cs/Mo and Cs/Cu. Further improvement of the production efficiency was observed by covering the plasma grid with tungsten and cesium simultaneously. Such co-deposition of W and Cs on the plasma grid produced the negative ion production efficiency of 1.7 times higher than that from the tungsten grid simply covered with Cs. (author)

  15. Secondary partitioning isotope effects on solvolytic ion pair intermediates

    International Nuclear Information System (INIS)

    Abbey, K.J.

    1976-01-01

    The thermal decomposition of N-benzhydryl N-nitrosobenzamide (BNB) has been shown to produce an ion pair which either forms ester or reacts with the solvent. In ethanol, the fraction of ester produced, R, was much smaller than R values obtained from solvolysis or from the diphenyldiazomethane (DDM)-benzoic acid reaction, which was suggested to yield the same ion pair as solvolysis. This difference led to the conclusion that the ionic species for the nitrosamide decomposition is a nitrogen-separated ion pair. This study was initiated on the assumption that BNB led to solvolytic ion pairs, but that both the intimate and solvent-separated ion pairs were produced directly from the nitrosamide. The use of α-tritiated BNB for the study of partitioning isotope effects (PIE's) in this system led to activity ratios much lower than expected from other reported work. Results of studies of ''special'' salt effect were not consistent for all situations, but the results do suggest that the assumption that BNB leads to solvolytic ion pairs is probably valid. The investigation of the more stable p-methoxybenzhydryl benzoate system proved to be highly productive. The ester fraction produced, R, responded dramatically to the addition of common-ion as well as ''special'' salts. The functional relationship of R on salt concentration could be explained in terms of Winstein's solvolytic scheme where the intimate ion pair, the solvent-separated ion pair, and the dissociated ion were important. Tritium-labelled compounds were used for PIE studies on 3 different compounds, and three different methods of reaction are proposed

  16. Probing ion-specific effects on aqueous acetate solutions: Ion pairing versus water structure modifications.

    Science.gov (United States)

    Petit, Tristan; Lange, Kathrin M; Conrad, Gerrit; Yamamoto, Kenji; Schwanke, Christoph; Hodeck, Kai F; Dantz, Marcus; Brandenburg, Tim; Suljoti, Edlira; Aziz, Emad F

    2014-05-01

    The effect of monovalent cations (Li(+), K(+), NH4 (+), Na(+)) on the water structure in aqueous chloride and acetate solutions was characterized by oxygen K-edge X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy, and resonant inelastic X-ray scattering (RIXS) of a liquid microjet. We show ion- and counterion dependent effects on the emission spectra of the oxygen K-edge, which we attribute to modifications of the hydrogen bond network of water. For acetates, ion pairing with carboxylates was also probed selectively by XAS and RIXS. We correlate our experimental results to speciation data and to the salting-out properties of the cations.

  17. Magnetic properties changes of MnAs thin films irradiated with highly charged ions

    OpenAIRE

    Trassinelli , Martino; Gafton , V.; Eddrief , Mahmoud; Etgens , Victor H.; Hidki , S.; Lacaze , Emmanuelle; Lamour , Emily; Luo , X.; Marangolo , Massimiliano; Merot , Jacques; Prigent , Christophe; Reuschl , Regina; Rozet , Jean-Pierre; Steydli , S.; Vernhet , Dominique

    2013-01-01

    International audience; We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Prelim...

  18. Titanium oxidation-reduction at low oxygen pressure under electron bombardment

    International Nuclear Information System (INIS)

    Brasca, R.; Passeggi, M.C.G.; Ferron, J.

    2006-01-01

    The effect of the electron bombardment on the first stages of the titanium oxidation process has been studied by means of Auger Electron Spectroscopy. Using Factor Analysis and the valence electron dependence behaviour of the titanium LMV Auger transition, we found that the process is strongly dependent on the oxygen pressure and electron current density. Depending on the irradiation conditions, films of different thickness and Ti oxidized states are obtained

  19. Sputtering and reflection of self-bombardment of tungsten material

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

    2015-04-15

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

  20. Sputtering and reflection of self-bombardment of tungsten material

    International Nuclear Information System (INIS)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

    2015-01-01

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

  1. Low energy ion implantation and high energy heavy ion irradiation in C60 films

    International Nuclear Information System (INIS)

    Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

    2001-01-01

    C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

  2. Channeling effect for low energy ion implantation in Si

    International Nuclear Information System (INIS)

    Cho, K.; Allen, W.R.; Finstad, T.G.; Chu, W.K.; Liu, J.; Wortman, J.J.

    1985-01-01

    Ion implantation is one of the most important processes in semiconductor device fabrication. Due to the crystalline nature of Si, channeling of implanted ions occurs during this process. Modern devices become smaller and shallower and therefore require ion implantation at lower energies. The effect of channeling on ion implantation becomes a significant problem for low energy ion implantation. The critical angle for axial and planar channeling increases with decreasing energy. This corresponds to an increased probability for channeling with lowering of ion energy. The industry approach to avoid the channeling problem is to employ a tilt angle of 7 0 between the ion implantation direction and the surface normal. We approach the problem by mapping major crystalline axes and planes near the [100] surface normal. Our analysis indicates that a 7 0 tilt is not an optimum selection in channeling reduction. Tilt angles in the range 5 0 to 6 0 combined with 7 0 +- 0.5 0 rotation from the (100) plane are better selections for the reduction of the channeling effect. The range of suitable angles is a function of the implantation energy. Implantations of boron along well specified crystallographic directions have been carried out by careful alignment and the resulting boron profiles measured by SIMS. (orig.)

  3. Kinetic effects in the propagation of ion-acoustic negative solitons in plasmas with negative ions

    International Nuclear Information System (INIS)

    Roberto, M.

    1986-12-01

    The existence of ion-acoustic negative (rarefactive) solitons in plasmas was experimentally verified and explained by means of the Korteweg-de Vries equation, obtained from a fluid model. The experimental results obtained in a double-plasma machine of the Institute for Space Research, however, have provided values of Mach number larger than predicted by this simple model. In order to improve the analysis of the phenomenon, Kinetic effects resultant from the occurrence of reflected electrons and trapped ions in the soliton potential were considered, using the theory of Sagdeev potential. For the description of the negative ion dynamics the fluid model treatment was preserved. It was verified that the effects of the finite temperature and trapping of the positive ions modify the results predicted by the simple KdV model in such a way that the Mach number is reduced as the ion temperature increases. It was shown that reflection of electrons is consistent with the large experimental values of Mach number. (Author) [pt

  4. Ion irradiation effect on metallic condensate adhesion to glass

    International Nuclear Information System (INIS)

    Kovalenko, V.V.; Upit, G.P.

    1984-01-01

    The ion irradiation effect on metallic condensate adhesion to glass is investigated. It has been found that in case of indium ion deposition the condensate adhesion to glass cleavages being in contact with atmosphere grows up to the level corresponding to a juvenile surface while in case of argon ion irradiation - exceeds it. It is shown that the observed adhesion growth is determined mainly by the surfwce modification comparising charge accumulation on surface, destruction of a subsurface layer and an interlayer formation in the condensate-substrate interface. The role of these factors in the course of various metals deposition is considered

  5. Ion beam effects in organic molecular solids and polymers

    International Nuclear Information System (INIS)

    Venkatesan, T.; Calcagno, L.; Elman, B.S.; Foti, G.

    1987-01-01

    In general ion implantation leads to irreversible changes in organic films and hence it is important to understand the damage mechanisms in these solids. Most of the technology based on irradiation effects in organics must somehow make use of the fact that the chemistry of the organic films is easily changed. This chapter is organized to explore the various ion induced chemical changes in the organic films followed by a description of the optical and electrical property changes produced in the films due to the ion irradiation

  6. Ion beam effects on the surface and near-surface composition of TaSi sub 2

    Energy Technology Data Exchange (ETDEWEB)

    Valeri, S.; Di Bona, A.; Ottaviani, G. (Dipt. di Fisica, Univ. di Modena (Italy)); Procop, M. (Zentralinstitut fuer Elektronenphysik, Berlin (Germany))

    1991-07-01

    Low-energy (0.7-4.5 keV) ion bombardment effects on polycrystalline TaSi{sub 2} at sputter steady state and in various intermediate steps have been investigated, in the temperature range up to 550degC, to determine the time and temperature dependence of the altered layer formation. This in turn enables a better knowledge of the synergistic effects of the processes mentioned above. At low temperatures (T{<=}410degC) the surface is silicon depleted, and the depletion is even more severe in the subsurface region up to a depth of several tens of angstroems; silicon preferential sputtering and radiation-enhanced segregation assisted by the displacement mixing-induced motion of atoms are assumed to be responsible for this composition profile, while thermally activated diffusion processes become operative above 410degC, reducing progressively the concentration gradient between the surface and the subsurface zone. The composition at different depths has been determined from Auger peaks for different kinetic energies, by varying the take-off angle and finally by sputter profiling at low in energy the high energy processed surfaces. Quantitative analysis has been performed by XPS and AES by using the elemental standard method. (orig.).

  7. Biological effects of accelerated boron, carbon, and neon ions

    International Nuclear Information System (INIS)

    Grigoryev, Yu.G.; Ryzhov, N.I.; Popov, V.I.

    1975-01-01

    The biological effects of accelerated boron, carbon, and neon ions on various biological materials were determined. The accelerated ions included 10 B, 11 B, 12 C, 20 Ne, 22 Ne, and 40 Ar. Gamma radiation and x radiation were used as references in the experiments. Among the biological materials used were mammalian cells and tissues, yeasts, unicellular algae (chlorella), and hydrogen bacteria. The results of the investigation are given and the biophysical aspects of the problem are discussed

  8. Quantum screening effects on the ion-ion collisions in strongly coupled semiclassical plasmas

    International Nuclear Information System (INIS)

    Ki, Dae-Han; Jung, Young-Dae

    2010-01-01

    The quantum screening effects on the ion-ion collisions are investigated in strongly coupled semiclassical hydrogen plasmas. The method of stationary phase and effective interaction potential containing the quantum mechanical effect are employed to obtain the scattering phase shift and scattering cross section as functions of the impact parameter, collision energy, de Broglie wavelength, and Debye length. The result shows that the scattering phase and cross section decrease with increasing de Broglie wavelength. It is also shown that the scattering cross section increases with an increase of the Debye length. Hence, it is found that the quantum effect suppresses the scattering cross section. In addition, the quantum effect on the scattering cross section is found to be more important in small Debye length domains.

  9. Stabilization of kinetic internal kink mode by ion diamagnetic effects

    International Nuclear Information System (INIS)

    Naitou, H.; Kuramoto, T.; Kobayashi, T.; Yagi, M.; Tokuda, S.; Matsumoto, T.

    2000-04-01

    Ion diamagnetic effects on the m=1 (poloidal mode number) and n=1 (toroidal mode number) kinetic internal kink mode are studied numerically by the three-field gyro-reduced-MHD code in the cylindrical coordinates, GRM3F-CY. In the derivation of the gryo-reduced-MHD model including the ion diamagnetic effects, finite gyroradius effects of ions are added to the gyrokinetic Poisson equation (quasi-neutral condition) and the convection term of the conservation law of the ion density. It is found that the long wavelength approximation, ksub(perpendicular) ρ ti ti is the thermal ion gyroradius, fails to reproduce the correct dispersion relation; the formulation valid even for ksub(perpendicular) ρ ti >> 1 is necessary. The results of numerical calculation coincide with the theory for |ω *e |+|ω *i | 0 , where the growth rate reduces as the density gradient increases. Here ω *e and ω *i are electron and ion diamagnetic angular frequencies estimated at the rational surface of q=1 (q is a safety factor), respectively, and γ 0 is the growth rate for the uniform density. Very weak instability, however, is observed for |ω *e |+|ω *i | 0 , where the theory predicts the complete stabilization. This residual instability appears since the region with the density gradient is limited in the radial direction and the stabilization by the outgoing drift-wave like mode becomes incomplete. (author)

  10. Saturation of plastic deformation by swift heavy ion irradiation: Ion hammering vs. surface effects

    Energy Technology Data Exchange (ETDEWEB)

    Ferhati, Redi; Dautel, Knut; Bolse, Wolfgang [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart (Germany); Fritzsche, Monika [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2012-07-01

    Swift heavy ion (SHI) induced plastic deformation is a subject of current research and scientific discussion. This *Ion Hammering* phenomenon was first observed 30 years ago in amorphous materials like metallic glasses. About 10 years ago, Feyh et al. have shown that stress generation and *Ion Hammering* result in self-organization of thin NiO-films on Si-wafers into a sub-micron lamellae-like structure under grazing angle irradiation. The growth of the lamellae was found to saturate as soon as they have reached a thickness of a few hundreds of nm. Here we show our latest results on the restructuring of pre-patterned thin oxide films by SHI under various irradiation conditions. The experiments were performed by employing (in-situ) scanning electron microscopy, and were complemented by (in-situ) energy dispersive x-ray analysis and atomic force microscopy. As we will show, the saturation behavior can be understood as a competition of *Ion Hammering* and surface energy effects, while the unexpected fact, that the initially crystalline films undergo *Ion Hammering* can possibly be attributed to oxygen loss and thus amorphization during irradiation.

  11. Molecular Ions in Ion Upflows and their Effects on Hot Atomic Oxygen Production

    Science.gov (United States)

    Foss, V.; Yau, A. W.; Shizgal, B.

    2017-12-01

    We present new direct ion composition observations of molecular ions in auroral ion upflows from the CASSIOPE Enhanced Polar Outflow Probe (e-POP). These observed molecular ions are N2+, NO+, and possibly O2+, and are found to occur at all e-POP altitudes starting at about 400 km, during auroral substorms and the different phases of magnetic storms, sometimes with upflow velocities exceeding a few hundred meters per second and abundances of 5-10%. The dissociative recombination of both O2+ and NO+ was previously proposed as an important source of hot oxygen atoms in the topside thermosphere [Hickey et al., 1995]. We investigate the possible effect of the observed molecular ions on the production of hot oxygen atoms in the storm and substorm-time auroral thermosphere. We present numerical solutions of the Boltzmann equation for the steady-state oxygen energy distribution function, taking into account both the production of the hot atoms and their subsequent collisional relaxation. Our result suggests the formation of a hot oxygen population with a characteristic temperature on the order of 0.3 eV and constituting 1-5% of the oxygen density near the exobase. We discuss the implication of this result in the context of magnetosphere-ionosphere-thermosphere coupling.

  12. Impact and spreading behavior of cluster atoms bombarding substrates

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Te-Hua, E-mail: fang.tehua@msa.hinet.net [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China); Kang, Shao-Hui; Liao, Jia-Hung [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)

    2009-12-15

    The purpose of this study is to investigate the behavior of copper cluster atoms bombarding a substrate using molecule dynamics based on tight-binding second moment approximation (TB-SMA) potential. The simulated results show that a crater on the substrate surface was created by the impact of the clusters. The variations of kinetic energy of cluster bombardments can be divided into three stages. At the initial impact level, the kinetic energies of the clusters and the substrate were constant. Then, the system went into a sluggish stage of energy variation, in which the kinetic energy of the clusters reduced. In the final stage, the kinetic energy of the system became stable. The high slip vector region around the crater had a disorder damage zone. The symmetry-like cross-slip occurred beneath the top layer of the substrate along the <1 1 0> orientations. The spreading index, temperature, and potential functions that affect the bombardments are also discussed.

  13. Impact and spreading behavior of cluster atoms bombarding substrates

    International Nuclear Information System (INIS)

    Fang, Te-Hua; Kang, Shao-Hui; Liao, Jia-Hung

    2009-01-01

    The purpose of this study is to investigate the behavior of copper cluster atoms bombarding a substrate using molecule dynamics based on tight-binding second moment approximation (TB-SMA) potential. The simulated results show that a crater on the substrate surface was created by the impact of the clusters. The variations of kinetic energy of cluster bombardments can be divided into three stages. At the initial impact level, the kinetic energies of the clusters and the substrate were constant. Then, the system went into a sluggish stage of energy variation, in which the kinetic energy of the clusters reduced. In the final stage, the kinetic energy of the system became stable. The high slip vector region around the crater had a disorder damage zone. The symmetry-like cross-slip occurred beneath the top layer of the substrate along the orientations. The spreading index, temperature, and potential functions that affect the bombardments are also discussed.

  14. Relativistic, QED and nuclear effects in highly charged ions revealed by resonant electron-ion recombination in storage rings

    OpenAIRE

    Schippers, Stefan

    2008-01-01

    Dielectronic recombination (DR) of few-electron ions has evolved into a sensitive spectroscopic tool for highly charged ions. This is due to technological advances in electron-beam preparation and ion-beam cooling techniques at heavy-ion storage rings. Recent experiments prove unambiguously that DR collision spectroscopy has become sensitive to 2nd order QED and to nuclear effects. This review discusses the most recent developments in high-resolution spectroscopy of low-energy DR resonances, ...

  15. High current density ion source

    International Nuclear Information System (INIS)

    King, H.J.

    1977-01-01

    A high-current-density ion source with high total current is achieved by individually directing the beamlets from an electron bombardment ion source through screen and accelerator electrodes. The openings in these screen and accelerator electrodes are oriented and positioned to direct the individual beamlets substantially toward a focus point. 3 figures, 1 table

  16. Project of an ion thruster

    International Nuclear Information System (INIS)

    Perche, G.E.

    1983-07-01

    The mercury bombardment electrostatic ion thruster is the most successful electric thruster available today. This work describes a 5 cm diameter ion thruster with 3.000 s specific impulse and 5 mN thrust. The advantages of electric propulsion and the tests that will be performed are also presented. (Author) [pt

  17. Anomalous heat evolution of deuteron implanted Al on electron bombardment

    International Nuclear Information System (INIS)

    Kamada, K.; Kinoshita, H.; Takahashi, H.

    1994-05-01

    Anomalous heat evolution was observed in deuteron implanted Al foils on 175 keV electron bombardment. Local regions with linear dimension of several 100nm showed simultaneous transformation from single crystalline to polycrystalline structure instantaneously on the electron bombardment, indicating the temperature rise up to more than melting point of Al from room temperature. The amount of energy evolved was more than 180 MeV for each transformed region. The transformation was never observed in proton implanted Al foils. The heat evolution was considered due to a nuclear reaction in D 2 molecular collections. (author)

  18. Back bombardment for dispenser and lanthanum hexaboride cathodes

    Directory of Open Access Journals (Sweden)

    Mahmoud Bakr

    2011-06-01

    Full Text Available The back bombardment (BB effect limits wide usage of thermionic rf guns. The BB effect induces not only ramping-up of a cathode’s temperature and beam current, but also degradation of cavity voltage and beam energy during a macropulse. This paper presents a comparison of the BB effect for the case of dispenser tungsten-base (DC and lanthanum hexaboride (LaB_{6} thermionic rf gun cathodes. For each, particle simulation codes are used to simulate the BB effect and electron beam dynamics in a thermionic rf gun cathode. A semiempirical equation is also used to investigate the stopping range and deposited heat power of BB electrons in the cathode material. A numerical simulation method is used to calculate the change of the cathode temperature and current density during a single macropulse. This is done by solving two differential equations for the rf gun cavity equivalent circuit and one-dimensional thermal diffusion equation. High electron emission and small beam size are required for generation of a high-brightness electron beam, and so in this work the emission properties of the cathode are taken into account. Simulations of the BB effect show that, for a pulse of 6  μs duration, the DC cathode experiences a large change in the temperature compared with LaB_{6}, and a change in current density 6 times higher. Validation of the simulation results is performed using experimental data for beam current beyond the gun exit. The experimental data is well reproduced using the simulation method.

  19. Angular distributions of particles sputtered from multicomponent targets with gas cluster ions

    Energy Technology Data Exchange (ETDEWEB)

    Ieshkin, A.E. [Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Ermakov, Yu.A., E-mail: yuriermak@yandex.ru [Skobeltsyn Nuclear Physics Research Institute, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Chernysh, V.S. [Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2015-07-01

    The experimental angular distributions of atoms sputtered from polycrystalline W, Cd and Ni based alloys with 10 keV Ar cluster ions are presented. RBS was used to analyze a material deposited on a collector. It has been found that the mechanism of sputtering, connected with elastic properties of materials, has a significant influence on the angular distributions of sputtered components. The effect of non-stoichiometric sputtering at different emission angles has been found for the alloys under cluster ion bombardment. Substantial smoothing of the surface relief was observed for all targets irradiated with cluster ions.

  20. Industrial ion source technology

    Science.gov (United States)

    Kaufman, H. R.; Robinson, R. S.

    1978-01-01

    An analytical model was developed to describe the development of a coned surface texture with ion bombardment and simultaneous deposition of an impurity. A mathematical model of sputter deposition rate from a beveled target was developed in conjuction with the texturing models to provide an important input to that model. The establishment of a general procedure that will allow the treatment of manay different sputtering configurations is outlined. Calculation of cross sections for energetic binary collisions was extened to Ar, Kr.. and Xe with total cross sections for viscosity and diffusion calculated for the interaction energy range from leV to 1000eV. Physical sputtering and reactive ion etching experiments provided experimental data on the operating limits of a broad beam ion source using CF4 as a working gas to produce reactive species in a sputtering beam. Magnetic clustering effects are observed when Al is seeded with Fe and sputtered with Ar(?) ions. Silicon was textured at a micron scale by using a substrate temperature of 600 C.