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Sample records for ion-beam assisted deposition

  1. Lifetime obtained by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chakaroun, M. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France); Antony, R. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)], E-mail: remi.antony@unilim.fr; Taillepierre, P.; Moliton, A. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)

    2007-09-15

    We have fabricated green organic light-emitting diodes based on tris-(8-hydroxyquinoline)aluminium (Alq3) thin films. In order to favor the charge carriers transport from the anode, we have deposited a N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) layer (hole transport layer) on a ITO anode. Cathode is obtained with a calcium layer covered with a silver layer. This silver layer is used to protect the other layers against oxygen during the OLED use. All the depositions are performed under vacuum and the devices are not exposed to air during their realisation. In order to improve the silver layer characteristics, we have realized this layer with the ion beam assisted deposition process. The aim of this process is to densify the layer and then reduce the permeation of H{sub 2}O and O{sub 2}. We have used argon ions to assist the silver deposition. All the OLEDs optoelectronic characterizations (I = f(V), L = f(V)) are performed in the ambient air. We compare the results obtained with the assisted layer with those obtained with a classical cathode realized by thermal unassisted evaporation. We have realized lifetime measurements in the ambient air and we discuss about the assisted layer influence on the OLEDs performances.

  2. Effect of ion beam bombardment on the carbide in M2 steel modified by ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.Y.; Wang, F.J.; Wang, Y.K. (Dept. of Materials Engineering, Dalian Univ. of Technology (China)); Ma, T.C. (National Lab. of Materials Modification by Beam Three, Dalian (China))

    1991-10-30

    Transmission electron microscopy was used to study the effect of nitrogen ion bombardment with different doses on the carbides in M2 high speed steel as the nitrogen ions penetrated into the nitride films during ion-beam-assisted deposition. With different doses of nitrogen, alterations in the morphological characteristics of the carbide M6C at the interface were observed. With lower doses, knitting-like contrast within the carbide showed subboundary structure defects in M6C. With increasing dose, the substructure defects were broken up into small fragments owing to heavy bombardment. The microstructures of carbides at the interface damaged by nitrogen ions are discussed in detail. (orig.).

  3. Ion beam assisted deposition of metal-coatings on beryllium

    International Nuclear Information System (INIS)

    Tashlykov, I.S.; Tul'ev, V.V.

    2015-01-01

    Thin films were applied on beryllium substrates on the basis of metals (Cr, Ti, Cu and W) with method of the ion-assisted deposition in vacuum. Me/Be structures were prepared using 20 kV ions irradiation during deposition on beryllium neutral fraction generated from vacuum arc plasma. Rutherford back scattering and computer simulation RUMP code were applied to investigate the composition of the modified beryllium surface. Researches showed that the superficial structure is formed on beryllium by thickness ~ 50-60 nm. The covering composition includes atoms of the deposited metal (0.5-3.3 at. %), atoms of technological impurity carbon (0.8-1.8 at. %) and oxygen (6.3-9.9 at. %), atoms of beryllium from the substrate. Ion assisted deposition of metals on beryllium substrate is accompanied by radiation enhanced diffusion of metals, oxygen atoms in the substrate, out diffusion of beryllium, carbon atoms in the deposited coating and sputtering film-forming ions assists. (authors)

  4. Corrosion properties of aluminum based alloys deposited by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Enders, B.; Krauss, S.; Wolf, G.K.

    1994-01-01

    The replacement of cadmium coatings by other protective measures is an important task because of the environmentally detrimental properties of cadmium. Therefore, aluminum and aluminum alloy coatings containing elements such as silicon or magnesium with more positive or negative positions in the galvanic series in relation to pure aluminum were deposited by ion beam assisted deposition onto glass and low carbon steel. Pure aluminum films were deposited onto low carbon steel in order to study the influence of the ion-to-atom arrival ratio and the angle of ion incidence on the corrosion properties. For examination of the pitting behavior as a function of the concentration of alloying element, quasipotentiostatic current-potential and potentiostatic current-time plots were measured in chlorine-containing acetate buffer. It is shown that these alloys can protect steel substrates under uniform and pitting corrosion conditions considerably better than pure aluminum coatings. ((orig.))

  5. Space-qualified optical thin films by ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Hsiao, C.N.; Chen, H.P.; Chiu, P.K.; Lin, Y.W.; Chen, F.Z.; Tsai, D.P.

    2013-01-01

    Optical interference coatings designed for use in a space-grade multispectral assembly in a complementary metal-oxide‐semiconductor sensor were deposited on glass by ion-beam-assisted deposition for a Cassegrain-type space-based remote-sensing platform. The patterned multispectral assembly containing blue, green, red, near infrared, and panchromatic multilayer high/low alternated dielectric band-pass filter arrays in a single chip was fabricated by a mechanical mask and the photolithography process. The corresponding properties of the films were investigated by in situ optical monitoring and spectrometry. It was found that the optical properties were significantly improved by employing ion-beam-assisted deposition. The average transmittances were above 88% for the multispectral assembly, with a rejection transmittance of less than 1% in the spectral range 350–1100 nm. To estimate the optical stability of optical coatings for aerospace applications, a space environment assuming a satellite orbiting the Earth at an altitude of near 800 km was simulated by a Co 60 gamma (γ) radiation test. - Highlights: ►Parameters of optical filters were optimized by using admittance loci analysis. ►Higher index of refraction of films prepared by ion beam assisted deposition. ►The dielectric filters have acceptable resistance after γ radiation exposure

  6. Ion beam assisted deposition of nano-structured C:Ni films

    Energy Technology Data Exchange (ETDEWEB)

    Abrasonis, G.; Muecklich, A.; Heller, R.; Heinig, K.H.; Gemming, S.; Moeller, W. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Krause, M. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Institute of Physics, TU Dresden (Germany)

    2012-07-01

    Nanostructures influence material properties dramatically due to size, shape and interface effects. Thus the control of the structure at the nanoscale is a key issue in nanomaterials science. The interaction of hyperthermal ions with solids is confined to the nanometer scale. Thus, it can be used to control the morphology evolution during multiphase film deposition. Ion-induced displacements occur in a thin surface layer of the growing film where they increase the atomic mobility for the phase separation. Here the growth-structure relationship of C:Ni (15 at.%) nanocomposite films grown by oblique incidence (45 ) ion beam assisted deposition is reported. The influences of the flux of an assisting Ar+ ion beam (0-140 eV) as well as of an elevated substrate temperature have been studied. The formation of elongated nickel nanoparticles is strongly promoted by the ion beam assistance. Moreover, the metal nanocolumns no longer align with the advancing surface, but with the incoming ions. A window of conditions is established within which the ion assistance leads to the formation of regular composition modulations with a well defined periodicity and tilt. As the dominating driving force for the pattern formation is of physical origin, this approach might be applicable to other immiscible systems.

  7. Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

    2009-01-01

    The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

  8. Carbon nitride films synthesized by NH3-ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Song, H.W.; Cui, F.Z.; He, X.M.; Li, W.Z.; Li, H.D.

    1994-01-01

    Carbon nitride thin film films have been prepared by NH 3 -ion-beam-assisted deposition with bombardment energies of 200-800 eV at room temperature. These films have been characterized by transmission electron microscopy. Auger electron spectroscopy and x-ray photoelectron spectroscopy for chemical analysis. It was found that the structure of the films varied with the bombardment energy. In the case of 400 eV bombardment, the tiny crystallites immersed on an amorphous matrix were identified to be β-C 3 N 4 . X-ray photoelectron spectroscopy indicated that some carbon atoms and nitrogen atoms form unpolarized covalent bonds in these films. (Author)

  9. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    International Nuclear Information System (INIS)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO x N y ) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

  10. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mao Shoudong; Yang Hengxiu; Li Jinlong; Huang Feng [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 519 Zhuangshi Road, Ningbo 315201 (China); Song Zhenlun, E-mail: songzhenlun@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 519 Zhuangshi Road, Ningbo 315201 (China)

    2011-04-15

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar{sup +} ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar{sup +} ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  11. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  12. Structural and mechanical properties of hydroxyapatite coatings formed by ion-beam assisted deposition

    Science.gov (United States)

    Zykova, A.; Safonov, V.; Dudin, S.; Yakovin, S.; Donkov, N.; Ghaemi, M. H.; Szkodo, M.; Antoszkiewicz, M.; Szyfelbain, M.; Czaban, A.

    2018-03-01

    The ion-beam assisted deposition (IBAD) is an advanced method capable of producing crystalline coatings at low temperatures. We determined the characteristics of hydroxyapatite Ca10(PO4)6(OH)2 target and coatings formed by IBAD using X-ray photoemission spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and energy dispersive X-ray (EDX). The composition of the coatings’ cross-section and surface was close to those of the target. The XPS spectra showed that the binding energy values of Ca (2p1/2, 2p3/2), P (2p3/2), and O 1s levels are related to the hydroxyapatite phase. The coatings demonstrate an optimal H/E ratio, and a good resistance to scratch tests.

  13. Tool steel ion beam assisted nitrocarburization

    International Nuclear Information System (INIS)

    Zagonel, L.F.; Alvarez, F.

    2007-01-01

    The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

  14. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  15. The suggestion of droplets generation prevention method of CNx coating by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yagi, Yuji; Tokoroyama, Takayuki; Kousaka, Hiroyuki; Umehara, Noritsugu; Fuwa, Yoshio; Manabe, Kazuyoshi

    2013-01-01

    It has been reported that the carbon nitride (CNx) coating was the super-low friction in which friction coefficient was less than 0.01, and it attracts attention as a high wear resistance and low friction material. When synthesizing a CNx coating with Ion Beam Assisted Deposition (IBAD) method, it was clear that the small asperities called droplets was generated onto the CNx coating surface with increasing thickness, and these droplets generated high friction. Therefore, it is necessary to clarify droplets generation mechanism to reduce droplets. To establish optimal coating conditions for controlling droplets were clarified by paying attention to the energy of an electron beam and the shape of a carbon target. First of all, 300 nm thickness CNx coatings were synthesized with five different filament current densities to clarify the relationship between the filament current density and droplet heights. Secondly, the effect of carbon target shape on droplets generation was confirmed with normal and processed carbon target. Finally, friction coefficient of these surfaces was measured by friction tests under PAO lubrication. (author)

  16. Improved stability of organic light-emitting diode with aluminum cathodes prepared by ion beam assisted deposition

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    Soon Moon Jeong, Deuk Yeon Lee, Won Hoe Koo, Sang Hun Choi, Hong Koo Baik, Se-Jong Lee and Kie Moon Song

    2005-01-01

    Full Text Available We have fabricated highly stable organic electroluminescent devices based on spin-coated poly-p-phenylene-vynylene (PPV thin films. The electrical properties of aluminum cathode, prepared by ion beam assisted deposition, on PPV have been investigated and compared to those by thermal evaporation. Although energetic particles of Al assisted by Ar+ ion may damage the organic material, I–V–L characteristics are improved by applying thin Al buffer layer. In addition, a dense Al cathode inhibits the permeation of H2O and O2 into PPV film through pinhole defects, and thus retards dark spot growth. It may be deduced from highly packed structure of Al cathode with an increase in the contact area between Al and PPV that reduce the contact resistance. In conclusion, the lifetime of organic light-emitting device (OLED has been extended effectively by dense Al film through ion beam assisted deposition process.

  17. Ion beams application to modification of surface layer of solids with particular regard to IBAD method - ion beam assisted deposition realized in the INP; Zastosowanie wiazek jonowych do modyfikowania warstwy wierzchniej cial stalych, ze szczegolnym uwzglednieniem metody IBAD - Ion Beam Assisted Deposition, realizowanej w IFJ

    Energy Technology Data Exchange (ETDEWEB)

    Drwiega, M.; Lipinska, E.

    1992-12-31

    The different trends in ion engineering such as: dynamic ion mixing, ionized cluster beam deposition and ion beam assisted deposition are described. Some examples of properties of surface coatings are given and their applications are presented. The future of ion engineering is described. 48 refs, 12 figs, 4 tabs.

  18. Corrosion-resistant titanium nitride coatings formed on stainless steel by ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Baba, K.; Hatada, R.

    1994-01-01

    Titanium films 70nm thick were deposited on austenitic type 316L stainless steel substrates, and these specimens were irradiated with titanium ions of energy 70kV at a fluence of 1x10 17 ioncm -2 , using a metal vapor vacuum arc (MEVVA) IV metallic ion source at room temperature. After irradiation, titanium nitride (TiN) films were deposited by titanium evaporation and simultaneous irradiation by a nitrogen ion beam, with transport ratios of Ti to N atoms from 0.5 to 10.0 and an ion acceleration voltage of 2kV. The preferred orientation of the TiN films varied from left angle 200 right angle to left angle 111 right angle normal to the surface when the transport ratio was increased. With the help of Auger electron spectroscopy, interfacial mixing was verified. Nitrogen atoms were present in the state of titanium nitride for all transport ratios from 0.5 up to 10.0. However, the chemical bonding state of titanium changed from titanium nitride to the metallic state with increasing transport ratio Ti/N. The corrosion behavior was evaluated in an aqueous solution of sulfuric acid saturated with oxygen, using multisweep cyclic voltammetry measurements. Thin film deposition of pure titanium and titanium implantation prior to TiN deposition have beneficial effects on the suppression of transpassive chromium dissolution. ((orig.))

  19. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Bae, J.W.; Kim, J.S.; Yeom, G.Y.

    2001-01-01

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  20. Mechanical and tribological properties of carbon thin film with tungsten interlayer prepared by Ion beam assisted deposition

    Czech Academy of Sciences Publication Activity Database

    Vlčák, P.; Černý, F.; Tolde, Z.; Sepitka, J.; Gregora, Ivan; Daniš, S.

    2013-01-01

    Roč. 2013, FEB (2013) ISSN 2314-4874 Institutional support: RVO:68378271 Keywords : carbon coatings * ion beam deposition * XRD * nanoindentation Subject RIV: BM - Solid Matter Physics ; Magnetism http://dx.doi.org/10.1155/2013/630156

  1. Generation of electrical defects in ion beam assisted deposition of Cu(In,Ga)Se2 thin film solar cells

    International Nuclear Information System (INIS)

    Zachmann, H.; Puttnins, S.; Daume, F.; Rahm, A.; Otte, K.

    2011-01-01

    Thin films of Cu(In,Ga)Se 2 (CIGS) absorber layers for thin film solar cells have been manufactured on polyimide foil in a low temperature, ion beam assisted co-evaporation process. In the present work a set of CIGS thin films was produced with varying selenium ion energy. Solar cell devices have been manufactured from the films and characterized via admittance spectroscopy and capacitance-voltage profiling to determine the influence of the selenium ion energy on the electric parameters of the solar cells. It is shown that the impact of energetic selenium ions in the CIGS deposition process leads to a change in the activation energy and defect density and also in the spatial distribution of electrically active defects. For the interpretation of the results two defect models are taken into account.

  2. Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition

    Science.gov (United States)

    Yu, Zhinong; Leng, Jian; Xue, Wei; Zhang, Ting; Jiang, Yurong; Zhang, Jie; Zhang, Dongpu

    2012-01-01

    ZnS/Ag/ZnS (ZAZ) multilayer films were prepared on polyethene terephthalate (PET) by ion beam assisted deposition at room temperature. The structural, optical and electrical characteristics of ZAZ multilayers dependent on the thickness of silver layer were investigated. The ZAZ multilayers exhibit a low sheet resistance of about 10 Ω/sq., a high transmittance of 92.1%, and the improved resistance stabilities when subjected to bending. When the inserted Ag thickness is over 12 nm, the ZAZ multilayers show good resistance stabilities due to the existence of a ductile Ag metal layer. The results suggest that ZAZ film has better optoelectrical and anti-deflection characteristics than conventional indium tin oxide (ITO) single layer.

  3. Ion - beam assisted process in the physical deposition of organic thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Dimov, D; Spassova, E; Assa, J; Danev, G [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria); Georgiev, A, E-mail: dean@clf.bas.b [University of Chemical Technology and Metallurgy, 8 Kl. Ohridski Blvd., 1756 Sofia (Bulgaria)

    2010-04-01

    A novel method was developed for physical deposition of thin polyimide layers by applying an argon plasma assisted process. The influence was investigated of the plasma on the combined molecular flux of the two thermally evaporated precursors - oxydianiline and pyromellitic dianhydride. The effects observed on the properties of the deposited films are explained with the increased energy of the precursor molecules resulting from the ion-molecular collisions. As could be expected, molecules with higher energy possess higher mobility and thus determine the modification of the films structure and their electrical properties.

  4. In-plane aligned YBCO tape on textured YSZ buffer layer deposited on stainless steel substrate by laser ablation only with O{sup +} ion beam assistance

    Energy Technology Data Exchange (ETDEWEB)

    Huang Xintang [Huazhong Univ. of Sci. and Technol., Wuhan (China). Nat. Lab. of Laser Technol.]|[Huazhong Normal Univ., Wuhan, HB (China). Dept. of Physics; Wang Youqing; Wang Qiuliang; Chen Qingming [Huazhong Univ. of Sci. and Technol., Wuhan (China). Nat. Lab. of Laser Technol.

    1999-08-16

    In this paper we have prepared YSZ buffer layers on stainless steel substrates by laser ablation only with O{sup +} ion beam assistance and YBCO films on YSZ/steel consequently. The relevant parameters of YSZ and YBCO film deposition are indicated. (orig.) 8 refs.

  5. In-plane aligned YBCO tape on textured YSZ buffer layer deposited on stainless steel substrate by laser ablation only with O+ ion beam assistance

    International Nuclear Information System (INIS)

    Huang Xintang; Huazhong Normal Univ., Wuhan, HB; Wang Youqing; Wang Qiuliang; Chen Qingming

    1999-01-01

    In this paper we have prepared YSZ buffer layers on stainless steel substrates by laser ablation only with O + ion beam assistance and YBCO films on YSZ/steel consequently. The relevant parameters of YSZ and YBCO film deposition are indicated. (orig.)

  6. Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

    Science.gov (United States)

    Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

    2017-06-23

    The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

  7. Enhanced activity and interfacial durability study of ultra low Pt based electrocatalysts prepared by ion beam assisted deposition (IBAD) method

    International Nuclear Information System (INIS)

    Ramaswamy, N.; Arruda, T.M.; Wen, W.; Hakim, N.; Saha, M.; Gulla, A.; Mukerjee, S.

    2009-01-01

    Ultra low loading noble metal (0.04-0.12 mg Pt /cm 2 ) based electrodes were obtained by direct metallization of non-catalyzed gas diffusion layers via dual ion beam assisted deposition (IBAD) method. Fuel cell performance results reported earlier indicate significant improvements in terms of mass specific power density of 0.297 g Pt /kW with 250 A thick IBAD deposit (0.04 mg Pt /cm 2 for a total MEA loading of 0.08 mg Pt /cm 2 ) at 0.65 V in contrast to the state of the art power density of 1.18 g Pt /kW using 1 mg Pt(MEA) /cm 2 at 0.65 V. In this article we report the peroxide radical initiated attack of the membrane electrode assembly utilizing IBAD electrodes in comparison to commercially available E-TEK (now BASF Fuel Cell GmbH) electrodes and find the pathway of membrane degradation as well. A novel segmented fuel cell is used for this purpose to relate membrane degradation to peroxide generation at the electrode/electrolyte interface by means of systematic pre and post analyses of the membrane are presented. Also, we present the results of in situ X-ray absorption spectroscopy (XAS) experiments to elucidate the structure/property relationships of these electrodes that lead to superior performance in terms of gravimetric power density obtained during fuel cell operation.

  8. Simple Mathematical Models of High Energy Ion Beam Assisted Deposition Concentration Profiles in Binary Thin Films

    Czech Academy of Sciences Publication Activity Database

    Černý, F.; Konvičková, S.; Jech, V.; Hnatowicz, Vladimír

    2011-01-01

    Roč. 11, č. 10 (2011), s. 8936-8942 ISSN 1533-4880 R&D Projects: GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : SILICON-NITRIDE FILMS * ENHANCED DEPOSITION * IBAD-PROCESS Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.563, year: 2011

  9. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

  10. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  11. Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

    Science.gov (United States)

    Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

    1995-12-01

    Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

  12. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

    International Nuclear Information System (INIS)

    Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

    2008-01-01

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

  13. In-plane aligned YBCO film on textured YSZ buffer layer deposited on NiCr alloy tape by laser ablation with only O+ ion beam assistance

    International Nuclear Information System (INIS)

    Xin Tang Huang

    2000-01-01

    High critical current density and in-plane aligned YBa 2 Cu 3 O 7-x (YBCO) film on a textured yttria-stabilized zirconia (YSZ) buffer layer deposited on NiCr alloy (Hastelloy c-275) tape by laser ablation with only O + ion beam assistance was fabricated. The values of the x-ray phi-scan full width at half-maximum (FWHM) for YSZ(202) and YBCO(103) are 18 deg. and 11 deg., respectively. The critical current density of YBCO film is 7.9 x 105 A cm -2 at liquid nitrogen temperature and zero field, and its critical temperature is 90 K. (author)

  14. Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si

    International Nuclear Information System (INIS)

    Jia, Q.X.; Arendt, P.; Groves, J.R.; Fan, Y.; Roper, J.M.; Foltyn, S.R.

    1998-01-01

    Highly conductive biaxially textured RuO 2 thin films were deposited on technically important SiO 2 /Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO 2 on SiO 2 /Si. The biaxially oriented RuO 2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba 0.5 Sr 0.5 TiO 3 thin films on RuO 2 /IBAD-YSZ/SiO 2 /Si. The Ba 0.5 Sr 0.5 TiO 3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society

  15. Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

    Directory of Open Access Journals (Sweden)

    Chin-Chiuan Kuo

    2010-01-01

    Full Text Available Indium molybdenum oxide (IMO films were deposited onto the polyethersulfone (PES substrates by ion-beam-assisted evaporation (IBAE deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222. The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness pv of 8.75 nm and an average visible transmittance of 78.7%.

  16. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Directory of Open Access Journals (Sweden)

    Petr Vlcak

    2016-01-01

    Full Text Available The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2 rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

  17. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  18. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  19. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  20. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Wiedwald, Ulf [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Fakultät für Physik, Universität Duisburg-Essen, Lotharstraße 1, 47057 Duisburg (Germany)

    2014-01-14

    FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

  1. High performance polymer electrolyte fuel cells with ultra-low Pt loading electrodes prepared by dual ion-beam assisted deposition

    International Nuclear Information System (INIS)

    Saha, Madhu Sudan; Gulla, Andrea F.; Allen, Robert J.; Mukerjee, Sanjeev

    2006-01-01

    Ultra-low pure Pt-based electrodes (0.04-0.12 mg Pt /cm 2 ) were prepared by dual ion-beam assisted deposition (dual IBAD) method on the surface of a non-catalyzed gas diffusion layer (GDL) substrate. Film thicknesses ranged between 250 and 750 A, these are compared with a control, a conventional Pt/C (1.0 mg Pt(MEA) /cm 2 , E-TEK). The IBAD electrode constituted a significantly different morphology, where low density Pt deposits (largely amorphous) were formed with varying depths of penetration into the gas diffusion layer, exhibiting a gradual change towards increasing crystalline character (from 250 to 750 A). Mass specific power density of 0.297 g Pt /kW is reported with 250 A IBAD deposit (0.04 mg Pt /cm 2 for a total MEA loading of 0.08 mg Pt /cm 2 ) at 0.65 V. This is contrasted with the commercial MEA with a loading of 1 mg Pt(MEA) /cm 2 where mass specific power density obtained was 1.18 g Pt /kW (at 0.65 V), a value typical of current state of the art commercial electrodes containing Pt/C. The principal shortcoming in this effort is the area specific power density which was in the range of 0.27-0.43 W/cm 2 (for 250-750 A IBAD) at 0.65 V, hence much below the automotive target value of 0.8-0.9 W/cm 2 (at 0.65 V). An attempt to mitigate these losses is reported with the use of patterning. In this context a series of patterns ranging from 45 to 80% Pt coverage were used in conjunction with a hexagonal hole geometry. Up to 30% lowering of mass transport losses were realized

  2. Stoichiometry and characterization of aluminum oxynitride thin films grown by ion-beam-assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zabinski, J.S. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)], E-mail: Jianjun.Hu@WPAFB.AF.MIL; Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Pierce, N.A. [Propulsion Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Voevodin, A.A. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2008-07-31

    Oxides are inherently stable in air at elevated temperatures and may serve as wear resistant matrices for solid lubricants. Aluminum oxide is a particularly good candidate for a matrix because it has good diffusion barrier properties and modest hardness. Most thin film deposition techniques that are used to grow alumina require high temperatures to impart crystallinity. Crystalline films are about twice as hard as amorphous ones. Unfortunately, the mechanical properties of most engineering steels are degraded at temperatures above 250-350 deg. C. This work is focused on using energetic reactive ion bombardment during simultaneous pulsed laser deposition to enhance film crystallization at low temperatures. Alumina films were grown at several background gas pressures and temperatures, with and without Ar ion bombardment. The films were nearly stoichiometric except for depositions in vacuum. Using nitrogen ion bombardment, nitrogen was incorporated into the films and formed the Al-O-N matrix. Nitrogen concentration could be controlled through selection of gas pressure and ion energy. Crystalline Al-O-N films were grown at 330 deg. C with a negative bias voltage to the substrate, and showed improved hardness in comparison to amorphous films.

  3. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO{sub 2} for non-volatile memory device

    Energy Technology Data Exchange (ETDEWEB)

    Stepina, N.P. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)], E-mail: nstepina@mail.ru; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)

    2008-11-03

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO{sub 2}, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO{sub 2} /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots.

  4. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances.

  5. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    International Nuclear Information System (INIS)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang

    2013-01-01

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances

  6. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

    2014-10-30

    Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

  7. Focused ion beam machining and deposition for nanofabrication

    Energy Technology Data Exchange (ETDEWEB)

    Davies, S T; Khamsehpour, B [Warwick Univ., Coventry (United Kingdom). Dept. of Engineering

    1996-05-01

    Focused ion beam micromatching (FIBM) and focused ion beam deposition (FIBD) enable spatially selective, maskless, patterning and processing of materials at extremely high levels of resolution. State-of-the-art focused ion beam (FIB) columns based on high brightness liquid metal ion source (LMIS) technology are capable of forming probes with dimensions of order 10 nm with a lower limit on spot size set by the inherent energy spread of the LMIS and the chromatic aberration of ion optical systems. The combination of high lateral and depth resolution make FIBM and FIBD powerful tools for nanotechnology applications. In this paper we present some methods of controlling FIBM and FIBD processes for nanofabrication purposes and discuss their limitations. (author).

  8. Direct deposition of gold on silicon with focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

  9. Thickness dependence of magnetic properties and giant magneto-impedance effect in amorphous Co{sub 73}Si{sub 12}B{sub 15} thin films prepared by Dual-Ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); BISSE/BUAA-SPNEE joint Laboratory Magnetism and Sperconducting technology on Spacecraft, Beihang University, Beijing 100191 (China); Wang, San-sheng, E-mail: wangssh@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); BISSE/BUAA-SPNEE joint Laboratory Magnetism and Sperconducting technology on Spacecraft, Beihang University, Beijing 100191 (China); Hu, Teng [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); He, Tong-fu [School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191 (China); Chen, Zi-yu [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Yi, Zhong; Meng, Li-Fei [Science and Technology on Reliability and Environmental Engineering Laboratory, Beijing Institute of Spacecraft Environment Engineering, Beijing 100094 (China); BISSE/BUAA-SPNEE joint Laboratory Magnetism and Sperconducting technology on Spacecraft, Beihang University, Beijing 100191 (China)

    2017-03-15

    Dual-Ion Beam Assisted Deposition is a suitable method for the preparation of giant magneto-impedance (GMI) materials. In this paper, Co{sub 73}Si{sub 12}B{sub 15} thin films with different thicknesses were prepared by Dual-Ion Beam Assisted Deposition, and the influences of film thickness on magnetic properties and GMI effect were investigated. It was found that the asymmetric magnetic hysteresis loop in the prepared Co{sub 73}Si{sub 12}B{sub 15} thin films occurs at ambient temperature, and the shift behavior of hysteresis loop associated with film thickness. With the film thickness increasing, the values of shift field and coercive field and other parameters such as remanence and shift ratio appeared complex variation. At a certain frequency, the large GMI effect is only observed in some films, which have good magnetic properties including low coercivity, low remanence ratio and high shift ratio. The results indicated that the thickness dependence of magnetic properties nonlinearly determined the GMI effect in Co{sub 73}Si{sub 12}B{sub 15} thin films. - Highlights: • The relationship between film thickness and ΔZ/Z, ΔR/R, ΔX/X ratio of CoSiB film exhibits a complex behavior as the film thickness increases from 1.33 to 7.34 µm. The maximum value of GMI ratio is observed when the film thickness was 1.56, 2.48, 3.81 or 7.34 µm. • With the increase of film thickness, the peak frequency shifts to lower frequency, but does not decrease following the t-power law. • The above thickness phenomenon is due to the different magnetic properties of thin films. • The Dual-Ion Beam Assisted Deposition is introduced to prepare the GMI materials.

  10. Imprint reduction in rotating heavy ions beam energy deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bret, A., E-mail: antoineclaude.bret@uclm.es [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, MS-51, Cambridge, MA 02138 (United States); ETSI Industriales, Universidad Castilla-La Mancha, 13071 Ciudad Real (Spain); Instituto de Investigaciones Energéticas y Aplicaciones Industriales, Campus Universitario de Ciudad Real, 13071 Ciudad Real (Spain); Piriz, A.R., E-mail: Roberto.Piriz@uclm.es [ETSI Industriales, Universidad Castilla-La Mancha, 13071 Ciudad Real (Spain); Instituto de Investigaciones Energéticas y Aplicaciones Industriales, Campus Universitario de Ciudad Real, 13071 Ciudad Real (Spain); Tahir, N.A., E-mail: n.tahir@gsi.de [GSI Darmstadt, Plankstrasse 1, 64291 Darmstadt (Germany)

    2014-01-01

    The compression of a cylindrical target by a rotating heavy ions beam is contemplated in certain inertial fusion schemes or in heavy density matter experiments. Because the beam has its proper temporal profile, the energy deposition is asymmetric and leaves an imprint which can have important consequences for the rest of the process. In this paper, the Fourier components of the deposited ion density are computed exactly in terms of the beam temporal profile and its rotation frequency Ω. We show that for any beam profile of duration T, there exist an infinite number of values of ΩT canceling exactly any given harmonic. For the particular case of a parabolic profile, we find possible to cancel exactly the first harmonic and nearly cancel every other odd harmonics. In such case, the imprint amplitude is divided by 4 without any increase of Ω.

  11. Imprint reduction in rotating heavy ions beam energy deposition

    International Nuclear Information System (INIS)

    Bret, A.; Piriz, A.R.; Tahir, N.A.

    2014-01-01

    The compression of a cylindrical target by a rotating heavy ions beam is contemplated in certain inertial fusion schemes or in heavy density matter experiments. Because the beam has its proper temporal profile, the energy deposition is asymmetric and leaves an imprint which can have important consequences for the rest of the process. In this paper, the Fourier components of the deposited ion density are computed exactly in terms of the beam temporal profile and its rotation frequency Ω. We show that for any beam profile of duration T, there exist an infinite number of values of ΩT canceling exactly any given harmonic. For the particular case of a parabolic profile, we find possible to cancel exactly the first harmonic and nearly cancel every other odd harmonics. In such case, the imprint amplitude is divided by 4 without any increase of Ω

  12. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    International Nuclear Information System (INIS)

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-01-01

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 εo and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane

  13. Study on the Deposition Rate Depending on Substrate Position by Using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    Ion beams have been used for over thirty years to modify materials in manufacturing of integrated circuits, and improving the corrosion properties of surfaces. Recently, the requirements for ion beam processes are becoming especially challenging in the following areas : ultra shallow junction formation for LSI fabrication, low damage high rate ion beam sputtering and smoothing, high quality functional surface treatment for electrical and optical properties. Ion beam sputtering is an attractive technology for the deposition of thin film coatings onto a broad variety of polymer, Si-wafer, lightweight substrates. Demand for the decoration metal is increasing. In addition, lightweight of parts is important, because of energy issues in the industries. Although a lot of researches have been done with conventional PVD methods for the deposition of metal or ceramic films on the surface of the polymer, there are still adhesion problems.

  14. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  15. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza; Goettler, Drew F.; Jiang, Yingbing; Abbas, Khawar; Baboly, Mohammadhosein Ghasemi; Anjum, Dalaver H.; Chaieb, Saharoui; Leseman, Zayd Chad

    2015-01-01

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties

  16. Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

    International Nuclear Information System (INIS)

    Sirotkina, Natalia

    2003-01-01

    Ta 2 O 5 and SiO 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n 500nm and extinction coefficient k 500nm ) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta 2 O 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO 2 films also contain Ta impurity. Argon content increases with ion bombardment and, at maximum incorporation, argon bubbles are registered by TEM. XPS studies are complicated by surface contaminations and preferential sputtering. Evaporated SiO 2 films show +100 MPa stress (+ is tensile, - compressive). With 300 eV Ar + bombardment, stress changes to -200 MPa, n 500nm decreases (1.56-1.49) and k 500nm increases (1.4x10 -4 - 1.8x10 -3 ). Of all studied IBS conditions, stress in SiO 2 (-560 MPa) and Ta 2 O 5 (-350 MPa) films depends only on sputtering gas species and oxygen entry point into the chamber. With argon and oxygen bombardment stress in IBS SiO 2 films decreases to -380 MPa and below the stress measurement system resolution, respectively. While Ar + bombardment of Ta 2 O 5 films leads to increase in stress to -490 MPa, the effect of oxygen assistance depends on ion energy. The observed behaviour was related to the total recoil density. In DIBS SiO 2 and Ta 2 O 5 films n 500nm varies in the region of 1.5-1.59 and 2.13-2.20 and k 500nm is below 5.5x10 -3 and 8.5x10 -3 , respectively. The refractive index

  17. Cluster ion beam facilities

    International Nuclear Information System (INIS)

    Popok, V.N.; Prasalovich, S.V.; Odzhaev, V.B.; Campbell, E.E.B.

    2001-01-01

    A brief state-of-the-art review in the field of cluster-surface interactions is presented. Ionised cluster beams could become a powerful and versatile tool for the modification and processing of surfaces as an alternative to ion implantation and ion assisted deposition. The main effects of cluster-surface collisions and possible applications of cluster ion beams are discussed. The outlooks of the Cluster Implantation and Deposition Apparatus (CIDA) being developed in Guteborg University are shown

  18. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    Energy Technology Data Exchange (ETDEWEB)

    Awazu, Kaoru; Yoshida, Hiroyuki [Industrial Research Inst. of Ishikawa (Japan); Watanabe, Hiroshi [Gakushuin Univ., Tokyo (Japan); Iwaki, Masaya; Guzman, L [RIKEN, Saitama (Japan)

    1992-04-15

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C{sub 6}H{sub 6} gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10{sup 16} ions cm{sup -2}. The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.).

  19. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    International Nuclear Information System (INIS)

    Awazu, Kaoru; Yoshida, Hiroyuki; Watanabe, Hiroshi; Iwaki, Masaya; Guzman, L.

    1992-01-01

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C 6 H 6 gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10 16 ions cm -2 . The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.)

  20. Ion-beam nanopatterning: experimental results with chemically-assisted beam

    Science.gov (United States)

    Pochon, Sebastien C. R.

    2018-03-01

    The need for forming gratings (for example used in VR headsets) in materials such as SiO2 has seen a recent surge in the use of Ion beam etching techniques. However, when using an argon-only beam, the selectivity is limited as it is a physical process. Typically, gases such as CHF3, SF6, O2 and Cl2 can be added to argon in order to increase selectivity; depending on where the gas is injected, the process is known as Reactive Ion Beam Etching (RIBE) or Chemically Assisted Ion Beam Etching (CAIBE). The substrate holder can rotate in order to provide an axisymmetric etch rate profile. It can also be tilted over a range of angles to the beam direction. This enables control over the sidewall profile as well as radial uniformity optimisation. Ion beam directionality in conjunction with variable incident beam angle via platen angle setting enables profile control and feature shaping during nanopatterning. These hardware features unique to the Ion Beam etching methods can be used to create angled etch features. The CAIBE technique is also well suited to laser diode facet etch (for optoelectronic devices); these typically use III-V materials like InP. Here, we report on materials such as SiO2 etched without rotation and at a fixed platen angle allowing the formation of gratings and InP etched at a fixed angle with rotation allowing the formation of nanopillars and laser facets.

  1. Ion-beam texturing of uniaxially textured Ni films

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2005-01-01

    The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth

  2. Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

    Science.gov (United States)

    Jindal, V.; Kearney, P.; Sohn, J.; Harris-Jones, J.; John, A.; Godwin, M.; Antohe, A.; Teki, R.; Ma, A.; Goodwin, F.; Weaver, A.; Teora, P.

    2012-03-01

    Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction in EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that is currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH's current research is focused on in-house tool components to reduce their contributions to mask blank defects. SEMATECH is also working closely with the supplier to incorporate this learning into a next-generation deposition tool. This paper will describe requirements for the next-generation tool that are essential to realize low defect density EUV mask blanks. The goal of our work is to enable model-based predictions of defect performance and defect improvement for targeted process improvement and component learning to feed into the new deposition tool design. This paper will also highlight the defect reduction resulting from process improvements and the restrictions inherent in the current tool geometry and components that are an impediment to meeting HVM quality EUV mask blanks will be outlined.

  3. Effect of ion beam irradiation on the structure of ZnO films deposited by a dc arc plasmatron.

    Science.gov (United States)

    Penkov, Oleksiy V; Lee, Heon-Ju; Plaksin, Vadim Yu; Ko, Min Gook; Joa, Sang Beom; Yim, Chan Joo

    2008-02-01

    The deposition of polycrystalline ZnO film on a cold substrate was performed by using a plasmatron in rough vacuum condition. Low energy oxygen ion beam generated by a cold cathode ion source was introduced during the deposition process. The change of film property on the ion beam energy was checked. It is shown that irradiation by 200 eV ions improves crystalline structure of the film. Increasing of ion beam energy up to 400 eV leads to the degradation of a crystalline structure and decreases the deposition rate.

  4. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    International Nuclear Information System (INIS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-01-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  5. Characterization of copper thin films prepared by metal self-ion beam sputter deposition

    International Nuclear Information System (INIS)

    Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

    1994-01-01

    New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

  6. Characteristics of thin film fullerene coatings formed under different deposition conditions by power ion beams

    International Nuclear Information System (INIS)

    Petrov, A.V.; Ryabchikov, A.I.; Struts, V.K.; Usov, Yu.P.; Renk, T.J.

    2007-01-01

    Carbon allotropic form - C 60 and C 70 can be used in microelectronics, superconductors, solar batteries, logic and memory devices to increase processing tool wear resistance, as magnetic nanocomposite materials for record and storage information, in biology, medicine and pharmacology. In many cases it is necessary to have a thin-film containing C 60 and C 70 fullerene carbon coatings. A possibility in principle of thin carbon films formation with nanocrystalline structure and high content ∼30-95% of C 60 and C 70 fullerene mixture using the method of graphite targets sputtering by a power ion beam has been shown. Formation of thin-film containing C 60 and C 70 fullerene carbon coatings were carried out by means of deposition of ablation plasma on silicon substrates. Ablation plasma was generated as result of interaction of high-power pulsed ion beams (HPPIB) with graphite targets of different densities. It has been demonstrated that formation of fullerenes, their amount and characteristics of thin-film coatings depend on the deposition conditions. The key parameter for such process is the deposition rate, which determines thin film formation conditions and, subsequently, its structure and mechanical properties. Nano-hardness, Young module, adhesion to mono-crystalline silicon substrate, friction coefficient, roughness surface of synthesized coatings at the different deposition conditions were measured. These characteristics are under influence of such main process parameters as energy density of HPPIB, which, in turn, determinates the density and temperature of ablation plasma and deposition speed, which is thickness of film deposited for one pulse of ion current. Nano-hardness and Young module meanings are higher at the increasing of power density of ion beam. Adhesion value is less at the high deposition speed. As rule, friction coefficient depends on vice versa from roughness. (authors)

  7. An ion-beam-assisted process for high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

    1997-01-01

    We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T c ) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa 2 Cu 3 O 7 (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I - V characteristics. The well-defined Shapiro steps have been seen on the I - V curves under microwave radiation. The magnetic modulation of critical current of a 4 μm width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 μV at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0x10 -4 G. copyright 1997 American Institute of Physics

  8. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    International Nuclear Information System (INIS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

    2012-01-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  9. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  10. Environmental sensing with optical fiber sensors processed with focused ion beam and atomic layer deposition

    Science.gov (United States)

    Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

    2015-03-01

    We report an optical fiber chemical sensor based on a focused ion beam processed optical fiber. The demonstrated sensor is based on a cavity formed onto a standard 1550 nm single-mode fiber by either chemical etching, focused ion beam milling (FIB) or femtosecond laser ablation, on which side channels are drilled by either ion beam milling or femtosecond laser irradiation. The encapsulation of the cavity is achieved by optimized fusion splicing onto a standard single or multimode fiber. The empty cavity can be used as semi-curved Fabry-Pérot resonator for gas or liquid sensing. Increased reflectivity of the formed cavity mirrors can be achieved with atomic layer deposition (ALD) of alternating metal oxides. For chemical selective optical sensors, we demonstrate the same FIB-formed cavity concept, but filled with different materials, such as polydimethylsiloxane (PDMS), poly(methyl methacrylate) (PMMA) which show selective swelling when immersed in different solvents. Finally, a reducing agent sensor based on a FIB formed cavity partially sealed by fusion splicing and coated with a thin ZnO layer by ALD is presented and the results discussed. Sensor interrogation is achieved with spectral or multi-channel intensity measurements.

  11. Ion source for ion beam deposition employing a novel electrode assembly

    Science.gov (United States)

    Hayes, A. V.; Kanarov, V.; Yevtukhov, R.; Hegde, H.; Druz, B.; Yakovlevitch, D.; Cheesman, W.; Mirkov, V.

    2000-02-01

    A rf inductively coupled ion source employing a novel electrode assembly for focusing a broad ion beam on a relatively small target area was developed. The primary application of this ion source is the deposition of thin films used in the fabrication of magnetic sensors and optical devices. The ion optics consists of a three-electrode set of multiaperture concave dished grids with a beam extraction diameter of 150 mm. Also described is a variation in the design providing a beam extraction diameter of 120 mm. Grid hole diameters and grid spacing were optimized for low beamlet divergence and low grid impingement currents. The radius of curvature of the grids was optimized to obtain an optimally focused ion beam at the target location. A novel grid fabrication and mounting design was employed which overcomes typical limitations of such grid assemblies, particularly in terms of maintaining optimum beam focusing conditions after multiple cycles of operation. Ion beam generation with argon and xenon gases in energy ranges from 0.3 to 2.0 keV was characterized. For operation with argon gas, beam currents greater than 0.5 A were obtained with a beam energy of 800 eV. At optimal beam formation conditions, beam profiles at distances about equal to the radius of curvature were found to be close to Gaussian, with 99.9% of the beam current located within a 150 mm target diameter. Repeatability of the beam profile over long periods of operation is also reported.

  12. SERS analysis of Ag nanostructures produced by ion-beam deposition

    Science.gov (United States)

    Atanasov, P. A.; Nedyalkov, N. N.; Nikov, Ru G.; Grüner, Ch; Rauschenbach, B.; Fukata, N.

    2018-03-01

    This study deals with the development of a novel technique for formation of advanced Ag nanostructures (NSs) to be applied to high-resolution analyses based on surface enhanced Raman scattering (SERS). It has direct bearing on human health and food quality, e.g., monitoring small amount or traces of pollutants or undesirable additives. Three types of nanostructured Ag samples were produced using ion-beam deposition at glancing angle (GLAD) on quartz. All fabricated structures were covered with BI-58 pesticide (dimethoate) or Rhodamine 6G (R6G) for testing their potential for use as substrates for (SERS).

  13. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M.; Lin, Y.P.; Schmidt, H.; Liu, Y.L.; Barr, T.; Chang, R.P.H.

    1992-01-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described

  14. Analysis of sub-bandgap losses in TiO2 coating deposited via single and dual ion beam deposition

    Czech Academy of Sciences Publication Activity Database

    Žídek, Karel; Hlubuček, Jiří; Horodyská, Petra; Budasz, Jiří; Václavík, Jan

    2017-01-01

    Roč. 626, March (2017), s. 60-65 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1206 Institutional support: RVO:61389021 Keywords : Ion beam deposition * Titanium dioxide * Optical coating * Sub-bandgap losses * Urbach tail Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.879, year: 2016 http://www.sciencedirect.com/science/article/pii/S0040609017301256

  15. Low-energy ion-beam deposition apparatus equipped with surface analysis system

    International Nuclear Information System (INIS)

    Ohno, Hideki; Aoki, Yasushi; Nagai, Siro.

    1994-10-01

    A sophisticated apparatus for low energy ion beam deposition (IBD) was installed at Takasaki Radiation Chemistry Research Establishment of JAERI in March 1991. The apparatus is composed of an IBD system and a real time/in-situ surface analysis system for diagnosing deposited thin films. The IBD system provides various kinds of low energy ion down to 10 eV with current density of 10 μA/cm 2 and irradiation area of 15x15 mm 2 . The surface analysis system consists of RHEED, AES, ISS and SIMS. This report describes the characteristics and the operation procedure of the apparatus together with some experimental results on depositing thin carbon films. (author)

  16. Atomic layer deposition of HfO{sub 2} on graphene through controlled ion beam treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Seok [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419 (Korea, Republic of); Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun [School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei Ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Yeom, Geun Young, E-mail: knam1004@dju.kr, E-mail: gyyeom@skku.edu [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419 (Korea, Republic of); Kim, Kyong Nam, E-mail: knam1004@dju.kr, E-mail: gyyeom@skku.edu [School of Advanced Materials Science and Engineering, Daejeon University, Yongun-dong, Dong-gu, Daejeon 34520 (Korea, Republic of)

    2016-05-23

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar{sup +} ion beam, we cleaned the polymer residue without damaging the graphene network. HfO{sub 2} grown by atomic layer deposition on graphene cleaned using an Ar{sup +} ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar{sup +} ion cleaning) showed a non-uniform structure. A graphene–HfO{sub 2}–metal capacitor fabricated by growing 20-nm thick HfO{sub 2} on graphene exhibited a very low leakage current (<10{sup −11} A/cm{sup 2}) for Ar{sup +} ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  17. Ion beam deposition of DLC and nitrogen doped DLC thin films for enhanced haemocompatibility on PTFE

    International Nuclear Information System (INIS)

    Srinivasan, S.; Tang, Y.; Li, Y.S.; Yang, Q.; Hirose, A.

    2012-01-01

    Diamond-like carbon (DLC) and N-doped DLC (DLC:N) thin films have been synthesized on polytetrafluroethylene (PTFE) and silicon wafers using ion beam deposition. Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy and scanning electron microscopy were used to study the structural and morphological properties of the coated surface. The results show that the ion beam deposited DLC thin films exhibit high hardness and Young's modulus, low coefficient of friction and high adhesion to the substrate. Low concentration of nitrogen doping in DLC improves the mechanical properties and reduces the surface roughness. DLC coating decreases the surface energy and improves the wettability of PTFE. The platelet adhesion results show that the haemocompatibility of DLC coated PTFE, especially DLC:N coated PTFE, has been significantly enhanced as compared with uncoated PTFE. SEM observations show that the platelet reaction on the DLC and DLC:N coated PTFE was minimized as the platelets were much less aggregated and activated.

  18. Crystal structure of TiNi nanoparticles obtained by Ar ion beam deposition

    International Nuclear Information System (INIS)

    Castro, A. Torres; Cuellar, E. Lopez; Mendez, U. Ortiz; Yacaman, M. Jose

    2008-01-01

    Nanoparticles are a state of matter that have properties different from either molecules or bulk solids, turning them into a very interesting class of materials to study. In the present work, the crystal structure of TiNi nanoparticles obtained by ion beam deposition is characterized. TiNi nanoparticles were obtained from TiNi wire samples by sputtering with Ar ions using a Gatan precision ion polishing system. The TiNi nanoparticles were deposited on a Lacey carbon film that was used for characterization by transmission electron microscopy. The nanoparticles were characterized by high-resolution transmission electron microscopy, high-angle annular dark-field imaging, electron diffraction, scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy. Results of nanodiffraction seem to indicate that the nanoparticles keep the same B2 crystal structure as the bulk material but with a decreased lattice parameter

  19. Studies on mass deposition effect and energy effect of biomolecules implanted by N+ ion beam

    International Nuclear Information System (INIS)

    Shao Chunlin; Yu Zengliang

    1994-05-01

    By analyzing some spectrum of tyrosine sample implanted by N + ion beam, it is deduced that the implantation N + could react with the tyrosine molecule and substitute =C 5 H- group of benzene ring to produce a N-heterocyclic compound. This compound would notably affect the residual activity of the sample. Moreover, the percentage of the product molecules to the damaged tyrosine molecules is larger than the reciprocal of the proportion of their extinction coefficients. On the other hand, by comparing the release of inorganic phosphate, it is found that the radiation sensibility for four basic nucleotides is 5'-dTMP>5'-CMP>5'-GMP>5'-AMP. to implanted nucleotides, alkali treatment and heat treatment could increase the amount of inorganic phosphate. The amount of inorganic phosphate in the nucleotide samples directly implanted by ions beam is about 60% of the total amount of inorganic phosphate that could be released from the implanted samples heated at 90 degree C for 1.75 hours. Alkali treatment could damage and split the free bases released from the implanted nucleotides, but heat treatment might repair those damaged bases. Above results prove that ions implantation to biomolecules has the mass deposition effects and energy effects

  20. Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

    Science.gov (United States)

    Wang, C; Ke, S Y; Yang, J; Hu, W D; Qiu, F; Wang, R F; Yang, Y

    2015-03-13

    The dependence of the electronic properties of a single Ge/Si quantum dot (QD) grown by the ion-beam sputtering deposition technique on growth temperature and QD diameter is investigated by conductive atomic force microscopy (CAFM). The Si-Ge intermixing effect is demonstrated to be important for the current distribution of single QDs. The current staircase induced by the Coulomb blockade effect is observed at higher growth temperatures (>700 °C) due to the formation of an additional barrier between dislocated QDs and Si substrate for the resonant tunneling of holes. According to the proposed single-hole-tunneling model, the fact that the intermixing effect is observed to increase as the incoherent QD size decreases may explain the increase in the starting voltage of the current staircase and the decrease in the current step width.

  1. Dynamic energy spectrum and energy deposition in solid target by intense pulsed ion beams

    Institute of Scientific and Technical Information of China (English)

    Xiao Yu; Xiao-Yun Le; Zheng Liu; Jie Shen; Yu I.Isakova; Hao-Wen Zhong; Jie Zhang; Sha Yan; Gao-Long Zhang; Xiao-Fu Zhang

    2017-01-01

    A method for analyzing the dynamic energy spectrum of intense pulsed ion beam (IPIB) was proposed.Its influence on beam energy deposition in metal target was studied with IPIB produced by two types of magnetically insulated diodes (MID).The emission of IPIB was described with space charge limitation model,and the dynamic energy spectrum was further analyzed with time-of-flight method.IPIBs generated by pulsed accelerators of BIPPAB-450 (active MID) and TEMP-4M (passive MID) were studied.The dynamic energy spectrum was used to deduce the power density distribution of IPIB in the target with Monte Carlo simulation and infrared imaging diagnostics.The effect on the distribution and evolution of thermal field induced by the characteristics of IPIB dynamic energy spectrum was discussed.

  2. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza

    2015-02-04

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  3. Fabrication of highly oriented β-FeSi2 by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Nakanoya, Takamitsu; Sasase, Masato; Yamamoto, Hiroyuki; Saito, Takeru; Hojou, Kiichi

    2002-01-01

    We have prepared the 'environmentally friendly' semiconductor, β-FeSi 2 thin films by ion beam sputter deposition method. The temperature of Si (100) substrate during the deposition and total amount of deposited Fe have been changed in order to find the optimum condition of the film formation. The crystallinity and surface morphology of the formed silicides were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. It is understood that the domain of the epitaxially grown β-FeSi 2 increases with the substrate temperature up to 700degC at the fixed amount of deposited Fe (33 nm) by XRD spectra. On the other hand, α-FeSi 2 is appeared and increased with the temperature above 700degC. Granulation of the surface is also observed by SEM images at this temperature region. At the fixed temperature condition (700degC), formation of α phase, which is obtained at the higher temperature compared with β phase, is observed for the fewer deposited samples. These results suggest the possibility of the epitaxially grown β-FeSi 2 formation at the lower (< 700degC) temperature region. (author)

  4. Formation of aluminum films on silicon by ion beam deposition: a comparison with ionized cluster beam deposition

    International Nuclear Information System (INIS)

    Zuhr, R.A.; Haynes, T.E.; Galloway, M.D.; Tanaka, S.; Yamada, A.; Yamada, I.

    1991-01-01

    The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically analyzed ion beam to low energies (10-200 eV) for direct deposition onto the substrate under UHV conditions. The aluminum-on-silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. This technique has produced intriguing results for aluminum, with oriented crystalline films being formed at room temperature in spite of the 25% mismatch in lattice constant between aluminum and silicon. In this work, we have studied the formation of such films by IBD, with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40 to 300degC and with ion energies of 30-120 eV per ion. Completed films were analyzed by ion scattering, X-ray diffraction, scanning-electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are comparable to those for similar films grown by ICB deposition. (orig.)

  5. Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides)

    International Nuclear Information System (INIS)

    Espiau de Lamaestre, R.

    2005-04-01

    This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

  6. XPS study of the ultrathin a-C:H films deposited onto ion beam nitrided AISI 316 steel

    International Nuclear Information System (INIS)

    Meskinis, S.; Andrulevicius, M.; Kopustinskas, V.; Tamulevicius, S.

    2005-01-01

    Effects of the steel surface treatment by nitrogen ion beam and subsequent deposition of the diamond-like carbon (hydrogenated amorphous carbon (a-C:H) and nitrogen doped hydrogenated amorphous carbon (a-CN x :H)) films were investigated by means of the X-ray photoelectron spectroscopy (XPS). Experimental results show that nitrogen ion beam treatment of the AISI 316 steel surface even at room temperature results in the formation of the Cr and Fe nitrides. Replacement of the respective metal oxides by the nitrides takes place. Formation of the C-N bonds was observed for both ultrathin a-C:H and ultrathin a-CN x :H layers deposited onto the nitrided steel. Some Fe and/or Cr nitrides still were presented at the interface after the film deposition, too. Increased adhesion between the steel substrate and hydrogenated amorphous carbon layer after the ion beam nitridation was explained by three main factors. The first two is steel surface deoxidisation/passivation by nitrogen as a result of the ion beam treatment. The third one is carbon nitride formation at the nitrided steel-hydrogenated amorphous carbon (or a-CN x :H) film interface

  7. Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

    International Nuclear Information System (INIS)

    Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

    1991-01-01

    This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

  8. Properties of TiN coatings deposited by the method of condensation with ion bombardment accompanied by high-energy ion beam

    International Nuclear Information System (INIS)

    Obrezkov, O.I.; Vershok, B.A.; Dormashev, A.B.; Margulev, I.Ya.; Molchanova, S.A.; Andreev, E.S.; Dervuk, V.V.

    2002-01-01

    Vacuum-sputtering adapted commercial facility based coating of stainless steel with titanium nitride followed two procedures: ion bombardment condensation (IBC) and IBC under simultaneous effect of ion beam (IB). The deposition rate was equal to 0.1 μm min -1 ; the investigated coatings were characterized by 2.5 μm depth. Comparison analysis of features and characteristics of the specimens, as well as, full-scale tests of a coated cutting tool enabled to make conclusions about advantages of application of IB assisted IBC technology in contrast to the reference IBC technology [ru

  9. 3D magnetic nanostructures grown by focused electron and ion beam induced deposition

    Science.gov (United States)

    Fernandez-Pacheco, Amalio

    Three-dimensional nanomagnetism is an emerging research area, where magnetic nanostructures extend along the whole space, presenting novel functionalities not limited to the substrate plane. The development of this field could have a revolutionary impact in fields such as electronics, the Internet of Things or bio-applications. In this contribution, I will show our recent work on 3D magnetic nanostructures grown by focused electron and ion beam induced deposition. This 3D nano-printing techniques, based on the local chemical vapor deposition of a gas via the interaction with electrons and ions, makes the fabrication of complex 3D magnetic nanostructures possible. First, I will show how by exploiting different growth regimes, suspended Cobalt nanowires with modulated diameter can be patterned, with potential as domain wall devices. Afterwards, I will show recent results where the synthesis of Iron-Gallium alloys can be exploited in the field of artificial multiferroics. Moreover, we are developing novel methodologies combining physical vapor deposition and 3D nano-printing, creating Permalloy 3D nanostrips with controllable widths and lengths up to a few microns. This approach has been extended to more complex geometries by exploiting advanced simulation growth techniques combining Monte Carlo and continuum model methods. Throughout the talk, I will show the methodology we are following to characterize 3D magnetic nanostructures, by combining magneto-optical Kerr effect, scanning probe microscopy and electron and X-R magnetic imaging, and I will highlight some of the challenges and opportunities when studying these structures. I acknowledge funding from EPSRC and the Winton Foundation.

  10. Biased Target Ion Beam Deposition and Nanoskiving for Fabricating NiTi Alloy Nanowires

    Science.gov (United States)

    Hou, Huilong; Horn, Mark W.; Hamilton, Reginald F.

    2016-12-01

    Nanoskiving is a novel nanofabrication technique to produce shape memory alloy nanowires. Our previous work was the first to successfully fabricate NiTi alloy nanowires using the top-down approach, which leverages thin film technology and ultramicrotomy for ultra-thin sectioning. For this work, we utilized biased target ion beam deposition technology to fabricate nanoscale (i.e., sub-micrometer) NiTi alloy thin films. In contrast to our previous work, rapid thermal annealing was employed for heat treatment, and the B2 austenite to R-phase martensitic transformation was confirmed using stress-temperature and diffraction measurements. The ultramicrotome was programmable and facilitated sectioning the films to produce nanowires with thickness-to-width ratios ranging from 4:1 to 16:1. Energy dispersive X-ray spectroscopy analysis confirmed the elemental Ni and Ti make-up of the wires. The findings exposed the nanowires exhibited a natural ribbon-like curvature, which depended on the thickness-to-width ratio. The results demonstrate nanoskiving is a potential nanofabrication technique for producing NiTi alloy nanowires that are continuous with an unprecedented length on the order of hundreds of micrometers.

  11. Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

    2017-11-01

    The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

  12. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Andrew; Butte, Manish J., E-mail: manish.butte@stanford.edu [Department of Pediatrics, Division of Immunology, Allergy and Rheumatology, Stanford University, Stanford, California 94305 (United States)

    2014-08-04

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished.

  13. Ion-beam technologies

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, G.R. [Argonne National Lab., IL (United States)

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  14. The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

    International Nuclear Information System (INIS)

    Remnev, G.E.; Zakoutaev, A.N.; Grushin, I.I.; Matvenko, V.M.; Potemkin, A.V.; Ryzhkov, V.A.; Chernikov, E.V.

    1996-01-01

    A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm 2 , pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs

  15. The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

    Energy Technology Data Exchange (ETDEWEB)

    Remnev, G E; Zakoutaev, A N; Grushin, I I; Matvenko, V M; Potemkin, A V; Ryzhkov, V A [Tomsk Polytechnic Univ. (Russian Federation). Nuclear Physics Inst.; Ivanov, Yu F [Construction Academy, Tomsk (Russian Federation); Chernikov, E V [Siberian Physical Technical Institute, Tomsk (Russian Federation)

    1997-12-31

    A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm{sup 2}, pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs.

  16. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M; Patole, Shashikant P.; Abdelkader, Ahmed; Anjum, Dalaver H.; Deepak, Francis L; Da Costa, Pedro M. F. J.

    2015-01-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  17. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M

    2015-10-09

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  18. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices.

    Science.gov (United States)

    Batra, Nitin M; Patole, Shashikant P; Abdelkader, Ahmed; Anjum, Dalaver H; Deepak, Francis L; Costa, Pedro M F J

    2015-11-06

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  19. In situ analysis of thin film deposition processes using time-of-flight (TOF) ion beam analysis methods

    International Nuclear Information System (INIS)

    Im, J.; Lin, Y.; Schultz, J.A.; Auciello, O.H.; Chang, R.P.H.

    1995-05-01

    Non-destructive, in situ methods for characterization of thin film growth phenomena is key to understand thin film growth processes and to develop more reliable deposition procedures, especially for complex layered structures involving multi-phase materials. However, surface characterization methods that use either electrons (e.g. AES or XPS) or low energy ions (SIMS) require an UHV environment and utilize instrumentation which obstructs line of sight access to the substrate and are therefore incompatible with line of sight deposition methods and thin film deposition processes which introduce gas, either part of the deposition or in order to produce the desired phase. We have developed a means of differentially pumping both the ion beam source and detectors of a TOF ion beam surface analysis spectrometer that does not interfere with the deposition process and permits compositional and structural analysis of the growing film in the present system, at pressures up to several mTorr. Higher pressures are feasible with modified source-detector geometry. In order to quantify the sensitivity of Ion Scattering Spectroscopy (ISS) and Direct Recoil Spectroscopy (DRS), we have measured the signal intensity for stabilized clean metals in a variety of gas environments as a function of the ambient gas species and pressure, and ion beam species and kinetic energy. Results are interpreted in terms of collision cross sections which are compared with known gas phase scattering data and provide an apriori basis for the evaluation of time-of-flight ion scattering and recoil spectroscopies (ToF-ISARS) for various industrial processing environments which involve both inert and reactive cases. The cross section data for primary ion-gas molecule and recoiled atom-gas molecule interactions are also provided. from which the maximum operating pressure in any experimental configuration can be obtained

  20. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dandan, E-mail: dandan.wang@globalfoundries.com; Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong [Technology Development Department, GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  1. Formation of biaxial texture in metal films by selective ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Park, S.J. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States); Norton, D.P. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States)]. E-mail: dnort@mse.ufl.edu; Selvamanickam, Venkat [IGC-SuperPower, LLC, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2006-05-15

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.

  2. Formation of biaxial texture in metal films by selective ion beam etching

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2006-01-01

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature

  3. Second order nonlinear optical properties of zinc oxide films deposited by low temperature dual ion beam sputtering

    International Nuclear Information System (INIS)

    Larciprete, M.C.; Passeri, D.; Michelotti, F.; Paoloni, S.; Sibilia, C.; Bertolotti, M.; Belardini, A.; Sarto, F.; Somma, F.; Lo Mastro, S.

    2005-01-01

    We investigated second order optical nonlinearity of zinc oxide thin films, grown on glass substrates by the dual ion beam sputtering technique under different deposition conditions. Linear optical characterization of the films was carried out by spectrophotometric optical transmittance and reflectance measurements, giving the complex refractive index dispersion. Resistivity of the films was determined using the four-point probe sheet resistance method. Second harmonic generation measurements were performed by means of the Maker fringes technique where the fundamental beam was originated by nanosecond laser at λ=1064 nm. We found a relatively high nonlinear optical response, and evidence of a dependence of the nonlinear coefficient on the deposition parameters for each sample. Moreover, the crystalline properties of the films were investigated by x-ray diffraction measurements and correlation with second order nonlinearity were analyzed. Finally, we investigated the influence of the oxygen flow rate during the deposition process on both the second order nonlinearity and the structural properties of the samples

  4. Ion beam texturing

    Science.gov (United States)

    Hudson, W. R.

    1977-01-01

    A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

  5. Adhesion-enhanced thick copper film deposition on aluminum oxide by an ion-beam-mixed Al seed layer

    International Nuclear Information System (INIS)

    Kim, Hyung-Jin; Park, Jae-Won

    2012-01-01

    We report a highly-adherent 30-μm Cu conductive-path coating on an aluminum-oxide layer anodized on an aluminum-alloy substrate for a metal-printed circuit-board application. A 50-nm Al layer was first coated with an e-beam evaporative deposition method on the anodized oxide, followed by ion bombardment to mix the interfacial region. Subsequently, a Cu coating was deposited onto the mixed seed layer to the designed thickness. Adhesions of the interface were tested by using tape adhesion test, and pull-off tests and showed commercially acceptable adhesions for such thick coating layers. The ion beam mixing (IBM) plays the role of fastening the thin seed coating layer to the substrate and enhancing the adhesion of the Cu conductive path on the anodized aluminum surface.

  6. Study of Sb/SnO{sub 2} bi-layer films prepared by ion beam sputtering deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chun-Min [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Chun-Chieh [Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan, ROC (China); Kuo, Jui-Chao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2014-11-03

    In the present work, bi-layer thin films of Sb/SnO{sub 2} were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO{sub 2} layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO{sub 2} bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10{sup −3} Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO{sub 2} structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases.

  7. Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

    Directory of Open Access Journals (Sweden)

    Rius Gemma

    2014-01-01

    Full Text Available Recently, relevant advances on graphene as a building block of integrated circuits (ICs have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C into patterned graphitic layers by metal-assisted thermal treatment (Ni foils. In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

  8. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  9. Direct fabrication of a W-C SNS Josephson junction using focused-ion-beam chemical vapour deposition

    International Nuclear Information System (INIS)

    Dai, Jun; Kometani, Reo; Ishihara, Sunao; Warisawa, Shin’ichi; Onomitsu, Koji; Krockenberger, Yoshiharu; Yamaguchi, Hiroshi

    2014-01-01

    A tungsten-carbide (W-C) superconductor/normal metal/superconductor (SNS) Josephson junction has been fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). Under certain process conditions, the component ratio has been tuned from W: C: Ga = 26%: 66%: 8% in the superconducting wires to W: C: Ga = 14%: 79%: 7% in the metallic junction. The critical current density at 2.5 K in the SNS Josephson junction is 1/3 of that in W-C superconducting nanowire. Also, a Fraunhofer-like oscillation of critical current in the junction with four periods is observed. FIB-CVD opens avenues for novel functional superconducting nanodevices. (paper)

  10. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    International Nuclear Information System (INIS)

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-01-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

  11. Vertical Growth of Superconducting Crystalline Hollow Nanowires by He+ Focused Ion Beam Induced Deposition.

    Science.gov (United States)

    Córdoba, Rosa; Ibarra, Alfonso; Mailly, Dominique; De Teresa, José Ma

    2018-02-14

    Novel physical properties appear when the size of a superconductor is reduced to the nanoscale, in the range of its superconducting coherence length (ξ 0 ). Such nanosuperconductors are being investigated for potential applications in nanoelectronics and quantum computing. The design of three-dimensional nanosuperconductors allows one to conceive novel schemes for such applications. Here, we report for the first time the use of a He + focused-ion-beam-microscope in combination with the W(CO) 6 precursor to grow three-dimensional superconducting hollow nanowires as small as 32 nm in diameter and with an aspect ratio (length/diameter) of as much as 200. Such extreme resolution is achieved by using a small He + beam spot of 1 nm for the growth of the nanowires. As shown by transmission electron microscopy, they display grains of large size fitting with face-centered cubic WC 1-x phase. The nanowires, which are grown vertically to the substrate, are felled on the substrate by means of a nanomanipulator for their electrical characterization. They become superconducting at 6.4 K and show large critical magnetic field and critical current density resulting from their quasi-one-dimensional superconducting character. These results pave the way for future nanoelectronic devices based on three-dimensional nanosuperconductors.

  12. Development of Functional Surfaces on High-Density Polyethylene (HDPE) via Gas-Assisted Etching (GAE) Using Focused Ion Beams.

    Science.gov (United States)

    Sezen, Meltem; Bakan, Feray

    2015-12-01

    Irradiation damage, caused by the use of beams in electron and ion microscopes, leads to undesired physical/chemical material property changes or uncontrollable modification of structures. Particularly, soft matter such as polymers or biological materials is highly susceptible and very much prone to react on electron/ion beam irradiation. Nevertheless, it is possible to turn degradation-dependent physical/chemical changes from negative to positive use when materials are intentionally exposed to beams. Especially, controllable surface modification allows tuning of surface properties for targeted purposes and thus provides the use of ultimate materials and their systems at the micro/nanoscale for creating functional surfaces. In this work, XeF2 and I2 gases were used in the focused ion beam scanning electron microscope instrument in combination with gallium ion etching of high-density polyethylene surfaces with different beam currents and accordingly different gas exposure times resulting at the same ion dose to optimize and develop new polymer surface properties and to create functional polymer surfaces. Alterations in the surface morphologies and surface chemistry due to gas-assisted etching-based nanostructuring with various processing parameters were tracked using high-resolution SEM imaging, complementary energy-dispersive spectroscopic analyses, and atomic force microscopic investigations.

  13. Development of an ion-beam sputtering system for depositing thin films and multilayers of alloys and compounds

    International Nuclear Information System (INIS)

    Gupta, Mukul; Gupta, Ajay; Phase, D.M.; Chaudhari, S.M.; Dasannacharya, B.A.

    2002-01-01

    An ion-beam sputtering (IBS) system has been designed and developed for preparing thin films and multilayers of various elements, alloys and compounds. The ion source used is a 3 cm diameter, hot-cathode Kaufman type 1.5 kV ion source. The system has been successfully tested with the deposition of various materials, and the deposition parameters were optimised for achieving good quality of thin films and multilayers. A systematic illustration of the versatility of the system to produce a variety of structures is done by depositing thin film of pure iron, an alloy film of Fe-Zr, a compound thin film of FeN, a multilayer of Fe-Ag and an isotopic multilayer of 57 FeZr/FeZr. Microstructural measurements on these films using X-ray and neutron reflectivity, atomic force microscopy (AFM), and X-ray diffraction are presented and discussed to reveal the quality of the microstructures obtained with the system. It is found that in general, the surface roughnesses of the film deposited by IBS are significantly smaller as compared to those for films deposited by e-beam evaporation. Further, the grain size of the IBS crystalline films is significantly refined as compared to the films deposited by e-beam evaporation. Grain refinement may be one of the reasons for reduced surface roughness. In the case of amorphous films, the roughness of the films does not increase appreciably beyond that of the substrate even after depositing thicknesses of several hundred angstroms

  14. Effects of deposition and post-annealing conditions on electrical properties and thermal stability of TiAlN films by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2006-01-01

    TiAlN films were deposited by ion beam sputter deposition (IBSD) using a Ti-Al (90/10) alloy target in a nitrogen atmosphere on thermal oxidized Si wafers. Effects of ion beam voltage, substrate temperature (T s ) and post-annealing conditions on electrical properties and oxidation resistance of TiAlN films were studied. According to the experimental results, the proper kinetic energy provided good crystallinity and a dense structure of the films. Because of their better crystallinity and predomination of (200) planes, TiAlN films deposited with 900 V at low T s (50 deg. C) have shown lower resistivity than those at high T s (250 deg. C). They also showed better oxidation resistance. If the beam voltage was too high, it caused some damage to the film surfaces, which caused poor oxidation resistance of films. When sufficient kinetic energy was provided by the beam voltage, the mobility of adatoms was too high due to their extra thermal energy, thus reducing the crystallinity and structure density of the films. A beam voltage of 900 V and a substrate temperature of 50 deg. C were the optimum deposition conditions used in this research. They provided good oxidation resistance and low electrical resistivity for IBSD TiAlN films

  15. Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

    International Nuclear Information System (INIS)

    Fernandez-Pacheco, A.; Ibarra, M. R.; De Teresa, J. M.; Cordoba, R.

    2009-01-01

    We present a study of the transport properties of Pt-C nanowires created by focused-ion-beam (FIB)-induced deposition. By means of the measurement of the resistance while the deposit is being performed, we observe a progressive decrease in the nanowire resistivity with thickness, changing from 10 8 μΩ cm for thickness ∼20 nm to a lowest saturated value of 700 μΩ cm for thickness >150 nm. Spectroscopy analysis indicates that this dependence on thickness is caused by a gradient in the metal-carbon ratio as the deposit is grown. We have fabricated nanowires in different ranges of resistivity and studied their conduction mechanism as a function of temperature. A metal-insulator transition as a function of the nanowire thickness is observed. The results will be discussed in terms of the Mott-Anderson theory for noncrystalline materials. An exponential decrease in the conductance with the electric field is found for the most resistive samples, a phenomenon understood by the theory of hopping in lightly doped semiconductors under strong electric fields. This work explains the important discrepancies found in the literature for Pt-C nanostructures grown by FIB and opens the possibility to tune the transport properties of this material by an appropriate selection of the growth parameters.

  16. Masking considerations in chemically assisted ion beam etching of GaAs/AlGaAs laser structures

    International Nuclear Information System (INIS)

    Behfar-Rad, A.; Wong, S.S.; Davis, R.J.; Wolf, E.D.; Cornell Univ., Ithaca, NY

    1989-01-01

    The use of photoresist, Cr, and SiO 2 as etch masks for GaAs/AlGaAs structures in chemically assisted ion beam etching is reported. The optimized etch with a photoresist mask results in a high degree of anisotropy and smooth sidewalls. However, the etched surface contains undesirable features. The etch with a Cr mask is also highly anisotropic, and the etched surface is free of features. The drawback with Cr masks is that the sidewalls are rough. Vertical and smooth sidewalls as well as a featureless surface are obtained with a SiO 2 mask. The SiO 2 mask has been employed to etch the facets of monolithic GaAs/AlGaAs-based laser structures

  17. Preparation and characterization of nanocrystalline ITO thin films on glass and clay substrates by ion-beam sputter deposition method

    International Nuclear Information System (INIS)

    Venkatachalam, S.; Nanjo, H.; Kawasaki, K.; Wakui, Y.; Hayashi, H.; Ebina, T.

    2011-01-01

    Nanocrystalline indium tin oxide (ITO) thin films were prepared on clay-1 (Clay-TPP-LP-SA), clay-2 (Clay-TPP-SA) and glass substrates using ion-beam sputter deposition method. X-ray diffraction (XRD) patterns showed that the as-deposited ITO films on both clay-1 and clay-2 substrates were a mixture of amorphous and polycrystalline. But the as-deposited ITO films on glass substrates were polycrystalline. The surface morphologies of as-deposited ITO/glass has smooth surface; in contrast, ITO/clay-1 has rough surface. The surface roughnesses of ITO thin films on glass and clay-1 substrate were calculated as 4.3 and 83 nm, respectively. From the AFM and SEM analyses, the particle sizes of nanocrystalline ITO for a film thickness of 712 nm were calculated as 19.5 and 20 nm, respectively. Optical study showed that the optical transmittance of ITO/clay-2 was higher than that of ITO/clay-1. The sheet resistances of as-deposited ITO/clay-1 and ITO/clay-2 were calculated as 76.0 and 63.0 Ω/□, respectively. The figure of merit value for as-deposited ITO/clay-2 (12.70 x 10 -3 /Ω) was also higher than that of ITO/clay-1 (9.6 x 10 -3 /Ω), respectively. The flexibilities of ITO/clay-1 and ITO/clay-2 were evaluated as 13 and 12 mm, respectively. However, the ITO-coated clay-2 substrate showed much better optical and electrical properties as well as flexibility as compared to clay-1.

  18. Decreased bacterial growth on titanium nanoscale topographies created by ion beam assisted evaporation

    Directory of Open Access Journals (Sweden)

    Stolzoff M

    2017-02-01

    Full Text Available Michelle Stolzoff,1 Jason E Burns,2 Arash Aslani,2 Eric J Tobin,2 Congtin Nguyen,1 Nicholas De La Torre,3 Negar H Golshan,3 Katherine S Ziemer,3 Thomas J Webster1,3,4 1Department of Bioengineering, Northeastern University, Boston, 2N2 Biomedical, Bedford, MA, 3Department of Chemical Engineering, Northeastern University, Boston, MA, USA; 4Center of Excellence for Advanced Materials Research, University of King Abdulaziz, Jeddah, Saudi Arabia Abstract: Titanium is one of the most widely used materials for orthopedic implants, yet it has exhibited significant complications in the short and long term, largely resulting from poor cell–material interactions. Among these many modes of failure, bacterial infection at the site of implantation has become a greater concern with the rise of antibiotic-resistant bacteria. Nanostructured surfaces have been found to prevent bacterial colonization on many surfaces, including nanotextured titanium. In many cases, specific nanoscale roughness values and resulting surface energies have been considered to be “bactericidal”; here, we explore the use of ion beam evaporation as a novel technique to create nanoscale topographical features that can reduce bacterial density. Specifically, we investigated the relationship between the roughness and titanium nanofeature shapes and sizes, in which smaller, more regularly spaced nanofeatures (specifically 40–50 nm tall peaks spaced ~0.25 µm apart were found to have more effect than surfaces with high roughness values alone. Keywords: titanium, nanostructures, bacteria, bone ingrowth, surface roughness, IBAD 

  19. Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)

    International Nuclear Information System (INIS)

    Neumann, L.; Gerlach, J.W.; Rauschenbach, B.

    2012-01-01

    Ultra-thin gallium nitride (GaN) films were deposited using the ion-beam assisted molecular-beam epitaxy technique. The influence of the nitrogen ion to gallium atom flux ratio (I/A ratio) during the early stages of GaN nucleation and thin film growth directly, without a buffer layer on super-polished 6H-SiC(0001) substrates was studied. The deposition process was performed at a constant substrate temperature of 700 °C by evaporation of Ga and irradiation with hyperthermal nitrogen ions from a constricted glow-discharge ion source. The hyperthermal nitrogen ion flux was kept constant and the kinetic energy of the ions did not exceed 25 eV. The selection of different I/A ratios in the range from 0.8 to 3.2 was done by varying the Ga deposition rate between 5 × 10 13 and 2 × 10 14 at. cm −2 s −1 . The crystalline surface structure during the GaN growth was monitored in situ by reflection high-energy electron diffraction. The surface topography of the films as well as the morphology of separated GaN islands on the substrate surface was examined after film growth using a scanning tunneling microscope without interruption of ultra-high vacuum. The results show, that the I/A ratio has a major impact on the properties of the resulting ultra-thin GaN films. The growth mode, the surface roughness, the degree of GaN coverage of the substrate and the polytype mixture depend notably on the I/A ratio. - Highlights: ► Ultra-thin epitaxial GaN films prepared by hyperthermal ion-beam assisted deposition. ► Surface structure and topography studied during and after initial growth stages. ► Growth mode dependent on nitrogen ion to gallium atom flux ratio. ► Change from three-dimensional to two-dimensional growth for Ga-rich growth conditions.

  20. Effects of oxygen gas flow rate and ion beam plasma conditions on the opto-electronic properties of indium molybdenum oxide films fabricated by ion beam-assisted evaporation

    International Nuclear Information System (INIS)

    Kuo, C.C.; Liu, C.C.; Lin, C.C.; Liou, Y.Y.; He, J.L.; Chen, F.S.

    2008-01-01

    The purpose of the present work is to experimentally study the effects of the oxygen gas flow rate and ion beam plasma conditions on the properties of indium molybdenum oxide (IMO) films deposited onto the polyethersulfone (PES) substrate. Crystal structure, surface morphology, and optoelectronic properties of IMO films are examined as a function of oxygen gas flow rate and ion beam discharge voltage. Experimental results show that the IMO films consist of a cubic bixbyite B-In 2 O 3 single phase with its crystal preferred orientation alone B(222). Mo 6+ ions are therefore considered to partially substitute In 3+ sites in the deposit. Under-controlled ion bombardment during deposition enhances the reaction among those arriving oxygen and metal ion species to condense into IMO film and facilitates a decreased surface roughness of IMO film. The film with ultimate crystallinity and the lowest surface roughness is obtained when the oxygen flow rate of 3 sccm and the discharge voltage of 110 V are employed. This results in the lowest electrical resistivity due mainly to the increased Hall mobility and irrelevant to carrier concentration. The lowest electrical resistivity of 8.63 x 10 -4 ohm-cm with a 84.63% transmittance at a wavelength of 550 nm can be obtained, which satisfies the requirement of a flexible transparent conductive polymer substrate

  1. The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Lim, Jongmin; Lee, Chongmu

    2006-01-01

    The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

  2. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal; Yang, Yang; Ng, Tien Khee; Dursun, Ibrahim; Shi, Dong; Saidaminov, Makhsud I.; Priante, Davide; Bakr, Osman; Ooi, Boon S.

    2015-01-01

    is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability

  3. 1-D Van der Waals Foams Heated by Ion Beam Energy Deposition

    International Nuclear Information System (INIS)

    Zylstra, A.B.; Barnard, J.J.; More, R.M.

    2009-01-01

    One dimensional simulations of various initial average density aluminum foams (modeled as slabs of solid metal separated by low density regions) heated by volumetric energy deposition are conducted with a Lagrangian hydrodynamics code using a van der Waals equation of tate (EOS). The resulting behavior is studied to facilitate the design of future warm dense matter (WDM) experiments at LBNL. In the simulations the energy deposition ranges from 10 to 30 kJ/g and from 0.075 to 4.0 ns total pulse length, resulting in temperatures from approximately 1 o 4 eV. We study peak pressures and temperatures in the foams, expansion velocity, and the phase evolution. Five relevant time scales in the problem are identified. Additionally, we present a method for characterizing the level of inhomogeneity in a foam target as it is heated and the time it takes for a foam to homogenize.

  4. Reduction of deposition asymmetries in directly driven ion-beam and laser targets

    International Nuclear Information System (INIS)

    Mark, J.W.K.

    1985-01-01

    The authors have developed a procedure for reducing energy-dependent asymmetry in spherical targets driven directly by ion or laser beams. This work is part of a strategy for achieving illumination symmetry in such targets, which they propose as an alternative to those in the literature. This strategy allows an axially symmetric placement of beamlets, which would be convenient for some driver or reactor scenarios. It also allows the use of beam currents or energy fluxes to help reduce deposition asymmetry

  5. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    Science.gov (United States)

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  6. Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

    Science.gov (United States)

    Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Li, Shida; Yang, Xiao; Jiang, Chenghui; Liu, Dandan; Ji, Yiqin; Zhang, Feng; Chen, Deying

    2017-11-01

    The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.

  7. Deposition and properties of Al-containing diamond-like carbon films by a hybrid ion beam sources

    International Nuclear Information System (INIS)

    Dai Wei; Wang Aiying

    2011-01-01

    Research highlights: → Weak carbide former, Al element, was incorporated into DLC films using a hybrid ion beams system comprising an anode-layer ion source and a magnetron sputtering unit. → The structure disorder of the films tended to decrease with Al atoms doping, which resulted in the distinct reduction of the film internal stress and hardness, but the internal stress dropped faster than the hardness. → The DLC films with low internal stress and high hardness can be acquired by Al incorporation. - Abstract: Metal incorporation is one of the most effective methods for relaxing internal stress in diamond-like carbon (DLC) films. It was reported that the chemical state of the incorporated metal atoms has a significant influence on the film internal stress. The doped atoms embedding in the DLC matrix without bonding with C atoms can reduce the structure disorder of the DLC films through bond angle distortion and thus relax the internal stress of the films. In present paper, Al atoms, which are inert to carbon, were incorporated into the DLC films deposited by a hybrid ion beams system comprising an anode-layer ion source and a magnetron sputtering unit. The film composition, microstructure and atomic bond structure were characterized using X-ray photoelectron spectroscopy, transmission electron microscopy and Raman spectroscopy. The internal stress, mechanical properties and tribogoical behavior were studied as a function of Al concentration using a stress-tester, nanoindentation and ball-on-disc tribo-tester, respectively. The results indicated that the incorporated Al atoms were dissolved in the DLC matrix without bonding with C atoms and the films exhibited the feature of amorphous carbon. The structure disorder of the films tended to decrease with Al atoms incorporation. This resulted in the distinct reduction of the internal stress in the films. All Al-DLC films exhibited a lower friction coefficient compared with pure DLC film. The formation of the

  8. Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

    International Nuclear Information System (INIS)

    Fang, T.-H.; Chang, W.-J.; Lin, C.-M.; Lien, W.-C.

    2008-01-01

    Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 x 10 -17 J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power

  9. Pulsed ion beam-assisted carburizing of titanium in methane discharge

    International Nuclear Information System (INIS)

    Shafiq, M.; Shahzad, K.; Zakaullah, M.; Hassan, M.; Qayyum, A.; Ahmad, S.; Rawat, R. S.

    2010-01-01

    The carburizing of titanium (Ti) is accomplished by utilizing energetic ion pulses of a 1.5 kJ Mather type dense plasma focus (DPF) device operated in methane discharge. X-ray diffraction (XRD) analysis confirms the deposition of polycrystalline titanium carbide (TiC). The samples carburized at lower axial and angular positions show an improved texture for a typical (200)TiC plane. The Williamson–Hall method is employed to estimate average crystallite size and microstrains in the carburized Ti surface. Crystallite size is found to vary from ∼ 50 to 100 nm, depending on the deposition parameters. Microstrains vary with the sample position and hence ion flux, and are converted from tensile to compressive by increasing the flux. The carburizing of Ti is confirmed by two major doublets extending from 300 to 390 cm −1 and from 560 to 620 cm −1 corresponding to acoustic and optical active modes in Raman spectra, respectively. Analyses by scanning electron microscopy/energy dispersive x-ray spectroscopy (SEM/EDS) have provided qualitative and quantitative profiles of the carburized surface. The Vickers microhardness of Ti is significantly improved after carburizing. (nuclear physics)

  10. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    International Nuclear Information System (INIS)

    Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

    2016-01-01

    Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  11. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jie; Zhao, Bo [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Wang, Chong, E-mail: cwang@mail.sitp.ac.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Qiu, Feng; Wang, Rongfei [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Yang, Yu, E-mail: yuyang@ynu.edu.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China)

    2016-11-15

    Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  12. Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

    2014-07-01

    Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

  13. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  14. Ion beam generation and focusing

    International Nuclear Information System (INIS)

    Miller, P.A.; Mendel, C.W.; Swain, D.W.; Goldstein, S.A.

    1975-01-01

    Calculations have shown that efficiently generated and focused ion beams could have significant advantages over electron beams in achieving ignition of inertially-confined thermonuclear fuel. Efficient ion beam generation implies use of a good ion source and suppression of net electron current. Net electron flow can be reduced by allowing electrons to reflex through a highly transparent anode or by use of transverse magnetic fields (either beam self-fields or externally applied fields). Geometric focusing can be achieved if the beam is generated by appropriately shaped electrodes. Experimental results are presented which demonstrate ion beam generation in both reflexing and pinched-flow diodes. Spherically shaped electrodes are used to concentrate a proton beam, and target response to proton deposition is studied

  15. Computer simulation of scattered ion and sputtered species effects in ion beam sputter-deposition of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Krauss, A.R.; Auciello, O.

    1992-01-01

    Ion beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering also lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar + , Kr + and Xe + incident on Ba and Cu targets at 0 degrees and 45 degrees with respect to the surface normal, with the substrate positioned at 0 degrees and 45 degrees. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude

  16. X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

    International Nuclear Information System (INIS)

    Nelson, A.J.; Aharoni, H.

    1987-01-01

    X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O 2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5 x 10 -6 --4.0 x 10 -5 Torr. Changes in composition as well as in the deconvoluted In 3d 5 /sub // 2 , Sn 3d 5 /sub // 2 , and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as P/sub =/ is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In--O bonding

  17. Direct formation of thin films and epitaxial overlayers at low temperatures using a low-energy (10-500 eV) ion beam deposition system

    International Nuclear Information System (INIS)

    Zuhr, R.A.; Alton, G.D.; Appleton, B.R.; Herbots, N.; Noggle, T.S.; Pennycook, S.J.

    1987-01-01

    A low-energy ion beam deposition system has been developed at Oak Ridge National Laboratory and has been applied successfully to the growth of epitaxial films at low temperatures for a number of different elements. The deposition system utilizes the ion source and optics of a commercial ion implantation accelerator. The 35 keV mass- and energy-analyzed ion beam from the accelerator is decelerated in a four-element electrostatic lens assembly to energies between 10 and 500 eV for direct deposition onto a target under UHV conditions. Current densities on the order of 10 μA/cm 2 are achieved with good uniformity over a 1.4 cm diameter spot. The completed films are characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning have been studied. Epitaxial overlayers which show good minimum yields by ion channeling (3 to 4%) have been produced at temperatures as low as 375 0 C for Si on Si(100) and 250 0 C for Ge on Ge(100) at growth rates that exceed the solid-phase epitaxy rates at these temperatures by more than an order of magnitude

  18. Structural properties and surface wettability of Cu-containing diamond-like carbon films prepared by a hybrid linear ion beam deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Sun, Lili; Li, Xiaowei [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Xu, Sheng [Gao Hong Coating Technology Co., Ltd, Huzhou 313000 (China); Ke, Peiling [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-06-01

    Cu-containing diamond-like carbon (Cu-DLC) films were deposited on Si/glass substrate by a hybrid ion beam deposition system. The Cu concentration (0.1–39.7 at.%) in the film was controlled by varying the sputtering current. The microstructure and composition of Cu-DLC films were investigated systematically. The surface topography, roughness and surface wettability of the films were also studied. Results indicated that with increasing the Cu concentration, the water contact angle of the films changed from 66.8° for pure carbon film to more than 104.4° for Cu-DLC films with Cu concentration larger than 24.4 at.%. In the hydrophilic region, the polar surface energy decreased from 30.54 mJ/m{sup 2} for pure carbon film to 2.48 mJ/m{sup 2} for the film with Cu 7.0 at.%. - Highlights: • Cu-containing diamond-like carbon (DLC) films were deposited by a hybrid ion beam system. • Cu-containing DLC films exhibited a wide range of water contact angle. • The water contact angles vary with the surface energies and surface roughness.

  19. Ion beam modification of structural and optical properties of GeO2 thin films deposited at various substrate temperatures using pulsed laser deposition

    Science.gov (United States)

    Rathore, Mahendra Singh; Vinod, Arun; Angalakurthi, Rambabu; Pathak, A. P.; Singh, Fouran; Thatikonda, Santhosh Kumar; Nelamarri, Srinivasa Rao

    2017-11-01

    High energy heavy ion irradiation-induced modification of high quality crystalline GeO2 thin films grown at different substrate temperatures ranging from 100 to 500 °C using pulsed laser deposition has been investigated. The pristine films were irradiated with 100 MeV Ag7+ ions at fixed fluence of 1 × 1013 ions/cm2. These pristine and irradiated films have been characterized using X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared and photoluminescence spectroscopy. The XRD and Raman results of pristine films confirm the formation of hexagonal structure of GeO2 films, whereas the irradiation eliminates all the peaks except major GeO2 peak of (101) plane. It is evident from the XRD results that crystallite size changes with substrate temperature and SHI irradiation. The surface morphology of films was studied by AFM. The functional group of pristine and irradiated films was investigated by IR transmission spectra. Pristine films exhibited strong photoluminescence around 342 and 470 nm due to oxygen defects and a red shift in the PL bands is observed after irradiation. Possible mechanism of tuning structural and optical properties of pristine as well as irradiated GeO2 films with substrate temperature and ion beam irradiation has been reported in detail.

  20. Ion beam processing of bio-ceramics

    Science.gov (United States)

    Ektessabi, A. M.

    1995-05-01

    Thin films of bio-inert (TiO 2+α, Al 2O 3+α) and bio-active (compounds of calcium and phosphorus oxides, hydroxyapatite) were deposited on the most commonly used implant materials such as titanium and stainless steel, using a dual-ion-beam deposition system. Rutherford backscattering spectroscopy was carried out for quantitative measurement of the interfacial atomic mixing and the composition of the elements. The experimental results show that by controlling the ion beam energy and current, thin films with very good mechanical properties are obtained as a result of the ion beam mixing within the film and at the interface of the film and substrate.

  1. Advanced characterization of materials using swift ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Tabacniks, Manfredo H. [Universidade de Sao Paulo (USP), SP (Brazil)

    2011-07-01

    Swift ion beams are powerful non destructive tools for material analysis especially thin films. In spite of their high energy, usually several MeV/u, little energy is deposited by the ion on the sample. Energetic ions also use to stop far away (or outside) the inspected volume, hence producing negligible damage to the sample. Ion beam methods provide quantitative trace element analysis of any atomic element (and some isotopes) in a sample and are able to yield elemental depth profiles with spatial resolution of the order of 10mm. Relying on nuclear properties of the atoms, these methods are insensitive to the chemical environment of the element, consequently not limited by matrix effects. Ion beam methods are multielemental, can handle insulating materials, are quick (an analysis usually takes less than 15 minutes), and need little (if any) sample preparation. Ion beams are also sensitive to surface roughness and sample porosity and can be used to quickly inspect these properties in a sample. The Laboratory for Ion Beam Analysis of the University of Sao Paulo, LAMFI, is a multi-user facility dedicated to provide Ion Beam Methods like PIXE, RBS, FRS and NRA techniques for the analysis of materials and thin films. Operating since 1994, LAMFI is being used mostly by many researchers from within and outside USP, most of them non specialists in ion beam methods, but in need of ion beam analysis to carry out their research. At LAMFI, during the last 9 years, more than 50% of the accelerator time was dedicated to analysis, usually PIXE or RBS. 21% was down time and about 14% of the time was used for the development of ion beam methods which includes the use of RBS for roughness characterization exploring the shading of the beam by structures on the surface and by modeling the RBS spectrum as the product of a normalized RBS spectrum and a height density distribution function of the surface. Single element thick target PIXE analysis is being developed to obtain the thin

  2. Advanced characterization of materials using swift ion beams

    International Nuclear Information System (INIS)

    Tabacniks, Manfredo H.

    2011-01-01

    Swift ion beams are powerful non destructive tools for material analysis especially thin films. In spite of their high energy, usually several MeV/u, little energy is deposited by the ion on the sample. Energetic ions also use to stop far away (or outside) the inspected volume, hence producing negligible damage to the sample. Ion beam methods provide quantitative trace element analysis of any atomic element (and some isotopes) in a sample and are able to yield elemental depth profiles with spatial resolution of the order of 10mm. Relying on nuclear properties of the atoms, these methods are insensitive to the chemical environment of the element, consequently not limited by matrix effects. Ion beam methods are multielemental, can handle insulating materials, are quick (an analysis usually takes less than 15 minutes), and need little (if any) sample preparation. Ion beams are also sensitive to surface roughness and sample porosity and can be used to quickly inspect these properties in a sample. The Laboratory for Ion Beam Analysis of the University of Sao Paulo, LAMFI, is a multi-user facility dedicated to provide Ion Beam Methods like PIXE, RBS, FRS and NRA techniques for the analysis of materials and thin films. Operating since 1994, LAMFI is being used mostly by many researchers from within and outside USP, most of them non specialists in ion beam methods, but in need of ion beam analysis to carry out their research. At LAMFI, during the last 9 years, more than 50% of the accelerator time was dedicated to analysis, usually PIXE or RBS. 21% was down time and about 14% of the time was used for the development of ion beam methods which includes the use of RBS for roughness characterization exploring the shading of the beam by structures on the surface and by modeling the RBS spectrum as the product of a normalized RBS spectrum and a height density distribution function of the surface. Single element thick target PIXE analysis is being developed to obtain the thin

  3. Helicon plasma generator-assisted surface conversion ion source for the production of H(-) ion beams at the Los Alamos Neutron Science Center.

    Science.gov (United States)

    Tarvainen, O; Rouleau, G; Keller, R; Geros, E; Stelzer, J; Ferris, J

    2008-02-01

    The converter-type negative ion source currently employed at the Los Alamos Neutron Science Center (LANSCE) is based on cesium enhanced surface production of H(-) ion beams in a filament-driven discharge. In this kind of an ion source the extracted H(-) beam current is limited by the achievable plasma density which depends primarily on the electron emission current from the filaments. The emission current can be increased by increasing the filament temperature but, unfortunately, this leads not only to shorter filament lifetime but also to an increase in metal evaporation from the filament, which deposits on the H(-) converter surface and degrades its performance. Therefore, we have started an ion source development project focused on replacing these thermionic cathodes (filaments) of the converter source by a helicon plasma generator capable of producing high-density hydrogen plasmas with low electron energy. In our studies which have so far shown that the plasma density of the surface conversion source can be increased significantly by exciting a helicon wave in the plasma, and we expect to improve the performance of the surface converter H(-) ion source in terms of beam brightness and time between services. The design of this new source and preliminary results are presented, along with a discussion of physical processes relevant for H(-) ion beam production with this novel design. Ultimately, we perceive this approach as an interim step towards our long-term goal, combining a helicon plasma generator with an SNS-type main discharge chamber, which will allow us to individually optimize the plasma properties of the plasma cathode (helicon) and H(-) production (main discharge) in order to further improve the brightness of extracted H(-) ion beams.

  4. Helicon plasma generator-assisted surface conversion ion source for the production of H- ion beams at the Los Alamos Neutron Science Centera)

    Science.gov (United States)

    Tarvainen, O.; Rouleau, G.; Keller, R.; Geros, E.; Stelzer, J.; Ferris, J.

    2008-02-01

    The converter-type negative ion source currently employed at the Los Alamos Neutron Science Center (LANSCE) is based on cesium enhanced surface production of H- ion beams in a filament-driven discharge. In this kind of an ion source the extracted H- beam current is limited by the achievable plasma density which depends primarily on the electron emission current from the filaments. The emission current can be increased by increasing the filament temperature but, unfortunately, this leads not only to shorter filament lifetime but also to an increase in metal evaporation from the filament, which deposits on the H- converter surface and degrades its performance. Therefore, we have started an ion source development project focused on replacing these thermionic cathodes (filaments) of the converter source by a helicon plasma generator capable of producing high-density hydrogen plasmas with low electron energy. In our studies which have so far shown that the plasma density of the surface conversion source can be increased significantly by exciting a helicon wave in the plasma, and we expect to improve the performance of the surface converter H- ion source in terms of beam brightness and time between services. The design of this new source and preliminary results are presented, along with a discussion of physical processes relevant for H- ion beam production with this novel design. Ultimately, we perceive this approach as an interim step towards our long-term goal, combining a helicon plasma generator with an SNS-type main discharge chamber, which will allow us to individually optimize the plasma properties of the plasma cathode (helicon) and H- production (main discharge) in order to further improve the brightness of extracted H- ion beams.

  5. Helicon plasma generator-assisted surface conversion ion source for the production of H- ion beams at the Los Alamos Neutron Science Center

    International Nuclear Information System (INIS)

    Tarvainen, O.; Rouleau, G.; Keller, R.; Geros, E.; Stelzer, J.; Ferris, J.

    2008-01-01

    The converter-type negative ion source currently employed at the Los Alamos Neutron Science Center (LANSCE) is based on cesium enhanced surface production of H - ion beams in a filament-driven discharge. In this kind of an ion source the extracted H - beam current is limited by the achievable plasma density which depends primarily on the electron emission current from the filaments. The emission current can be increased by increasing the filament temperature but, unfortunately, this leads not only to shorter filament lifetime but also to an increase in metal evaporation from the filament, which deposits on the H - converter surface and degrades its performance. Therefore, we have started an ion source development project focused on replacing these thermionic cathodes (filaments) of the converter source by a helicon plasma generator capable of producing high-density hydrogen plasmas with low electron energy. In our studies which have so far shown that the plasma density of the surface conversion source can be increased significantly by exciting a helicon wave in the plasma, and we expect to improve the performance of the surface converter H - ion source in terms of beam brightness and time between services. The design of this new source and preliminary results are presented, along with a discussion of physical processes relevant for H - ion beam production with this novel design. Ultimately, we perceive this approach as an interim step towards our long-term goal, combining a helicon plasma generator with an SNS-type main discharge chamber, which will allow us to individually optimize the plasma properties of the plasma cathode (helicon) and H - production (main discharge) in order to further improve the brightness of extracted H - ion beams

  6. Modeling of ion beam surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Stinnett, R W [Quantum Manufacturing Technologies, Inc., Albuquerque, NM (United States); Maenchen, J E; Renk, T J [Sandia National Laboratories, Albuquerque, NM (United States); Struve, K W [Mission Research Corporation, Albuquerque, NM (United States); Campbell, M M [PASTDCO, Albuquerque, NM (United States)

    1997-12-31

    The use of intense pulsed ion beams is providing a new capability for surface engineering based on rapid thermal processing of the top few microns of metal, ceramic, and glass surfaces. The Ion Beam Surface Treatment (IBEST) process has been shown to produce enhancements in the hardness, corrosion, wear, and fatigue properties of surfaces by rapid melt and re-solidification. A new code called IBMOD was created, enabling the modeling of intense ion beam deposition and the resulting rapid thermal cycling of surfaces. This code was used to model the effect of treatment of aluminum, iron, and titanium using different ion species and pulse durations. (author). 3 figs., 4 refs.

  7. Influence of plasma-induced energy deposition effects, the equation of state, thermal ionization, pulse shaping, and radiation on ion-beam-driven expansions of plane metal targets

    International Nuclear Information System (INIS)

    Long, K.A.; Tahir, N.A.

    1986-01-01

    In a previous paper by Long and Tahir [Phys. Fluids 29, 275 (1986)], the motion of plane targets irradiated by ion beams whose energy deposition was assumed to be independent of the ion energy, and the temperature and density of the plasma, was analyzed. In this paper, the analytic solution is extended in order to include the effects of a temperature-and density-dependent energy deposition as a result of electron excitation, an improved equation of state, thermal ionization, a pulse shape, and radiation losses. The change in the energy deposition with temperature and density leads to range shortening and an increased power deposition in the target. It is shown how the analytic theory can be used to analyze experiments to measure the enhanced energy deposition. In order to further analyze experiments, numerical simulations are presented which include the plasma-induced effects on the energy deposition. It is shown that since the change in the range is due to both decrease in density and the increase in temperature, it is not possible to separate these two effects in present experiments. Therefore, the experiments which measure the time-dependent energy of the ions emerging from the back side of a plane target do not as yet measure the energy loss as a function of the density and temperature of the plasma or of the energy of the ion, but only an averaged loss over certain ranges of these physical quantities

  8. Ion Beam Propulsion Study

    Science.gov (United States)

    2008-01-01

    The Ion Beam Propulsion Study was a joint high-level study between the Applied Physics Laboratory operated by NASA and ASRC Aerospace at Kennedy Space Center, Florida, and Berkeley Scientific, Berkeley, California. The results were promising and suggested that work should continue if future funding becomes available. The application of ion thrusters for spacecraft propulsion is limited to quite modest ion sources with similarly modest ion beam parameters because of the mass penalty associated with the ion source and its power supply system. Also, the ion source technology has not been able to provide very high-power ion beams. Small ion beam propulsion systems were used with considerable success. Ion propulsion systems brought into practice use an onboard ion source to form an energetic ion beam, typically Xe+ ions, as the propellant. Such systems were used for steering and correction of telecommunication satellites and as the main thruster for the Deep Space 1 demonstration mission. In recent years, "giant" ion sources were developed for the controlled-fusion research effort worldwide, with beam parameters many orders of magnitude greater than the tiny ones of conventional space thruster application. The advent of such huge ion beam sources and the need for advanced propulsion systems for exploration of the solar system suggest a fresh look at ion beam propulsion, now with the giant fusion sources in mind.

  9. Thickness-modulated tungsten-carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields.

    Science.gov (United States)

    Serrano, Ismael García; Sesé, Javier; Guillamón, Isabel; Suderow, Hermann; Vieira, Sebastián; Ibarra, Manuel Ricardo; De Teresa, José María

    2016-01-01

    We report efficient vortex pinning in thickness-modulated tungsten-carbon-based (W-C) nanostructures grown by focused ion beam induced deposition (FIBID). By using FIBID, W-C superconducting films have been created with thickness modulation properties exhibiting periodicity from 60 to 140 nm, leading to a strong pinning potential for the vortex lattice. This produces local minima in the resistivity up to high magnetic fields (2.2 T) in a broad temperature range due to commensurability effects between the pinning potential and the vortex lattice. The results show that the combination of single-step FIBID fabrication of superconducting nanostructures with built-in artificial pinning landscapes and the small intrinsic random pinning potential of this material produces strong periodic pinning potentials, maximizing the opportunities for the investigation of fundamental aspects in vortex science under changing external stimuli (e.g., temperature, magnetic field, electrical current).

  10. The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

    Science.gov (United States)

    Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

    2017-02-01

    The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

  11. Ion beam monitoring

    International Nuclear Information System (INIS)

    McKinney, C.R.

    1980-01-01

    An ion beam analyzer is specified, having an ion source for generating ions of a sample to be analyzed, means for extracting the sample ions, means for focusing the sample ions into a beam, separation means positioned along the ion beam for selectively deflecting species of ions, and means for detecting the selected species of ions. According to the specification, the analyzer further comprises (a) means for disabling at least a portion of the separation means, such that the ion beam from the source remains undeflected; (b) means located along the path of the undeflected ion beam for sensing the sample ions; and (c) enabling means responsive to the sensing means for automatically re-enabling the separation means when the sample ions reach a predetermined intensity level. (author)

  12. Ion beam diagnosis

    International Nuclear Information System (INIS)

    Strehl, P.

    1994-04-01

    This report is an introduction to ion beam diagnosis. After a short description of the most important ion beam parameters measurements of the beam current by means of Faraday cups, calorimetry, and beam current transformers and measurements of the beam profile by means of viewing screens, profile grids and scanning devices, and residual gas ionization monitors are described. Finally measurements in the transverse and longitudinal phase space are considered. (HSI)

  13. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO{sub 3} capacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.-Y. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Wang, S.-C. [Department of Mechanical Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan, Taiwan (China); Chen, J.-S. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Huang, J.-L. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China)], E-mail: jlh888@mail.ncku.edu.tw

    2008-09-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO{sub 3} (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of {+-} 2.5 MV/cm and a leakage current density of about 1 x 10{sup -5} A/cm{sup 2} at an applied field of {+-} 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO{sub 2}/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors.

  14. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2008-01-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10 -5 A/cm 2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO 2 /Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors

  15. Nanostructures by ion beams

    Science.gov (United States)

    Schmidt, B.

    Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

  16. Biomaterials modification by ion beam

    International Nuclear Information System (INIS)

    Zhang Tonghe; Yi Zhongzhen; Zhang Xu; Wu Yuguang

    2001-01-01

    Ion beam technology is one of best ways for the modification of biomaterials. The results of ion beam modification of biomaterials are given. The method and results of improved biocompatibility are indicated by ion beam technology. The future development of ion beam modification of biomaterials is discussed

  17. Effect of titanium incorporation on the structural, mechanical and biocompatible properties of DLC thin films prepared by reactive-biased target ion beam deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Bharathy, P. Vijai [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India); Department of Mechanical Engineering, University of Saskatchewan, Saskatoon (Canada); Nataraj, D., E-mail: de.natraj@gmail.com [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India); Chu, Paul K.; Wang, Huaiyu [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Yang, Q. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon (Canada); Kiran, M.S.R.N. [School of Physics, University of Hyderabad, Hyderabad, Andra Pradesh (India); Silvestre-Albero, J. [Laboratorio de Materiales Avanzados, Departmento de Quimica Inorganica, Universidad de Alicante, Ap 99, E-03080 Alicante (Spain); Mangalaraj, D. [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India)

    2010-10-15

    Amorphous diamond like carbon (DLC) and titanium incorporated diamond like carbon (Ti-DLC) thin films were deposited by using reactive-biased target ion beam deposition method. The effects of Ti incorporation and target bias voltage on the microstructure and mechanical properties of the as-deposited films were investigated by means of X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and nano-indentation. It was found that the Ti content in Ti-DLC films gets increased with increasing target bias voltage. At about 4.2 at.% of Ti, uniform sized well dispersed nanocrystals were seen in the DLC matrix. Using FFT analysis, a facility available in the TEM, it was found that the nanocrystals are in cubic TiC phase. Though at the core, the incorporated Ti atoms react with carbon to form cubic TiC; most of the surface exposed Ti atoms were found to react with the atmospheric oxygen to form weakly bonded Ti-O. The presence of TiC nanocrystals greatly modified the sp{sup 3}/sp{sup 2} hybridized bonding ratio and is reflected in mechanical hardness of Ti-DLC films. These films were then tested for their biocompatibility by an invitro cell culturing test. Morphological observation and the cell proliferation test have demonstrated that the human osteoblast cells well attach and proliferate on the surface of Ti incorporated DLC films, suggesting possible applications in bone related implant coatings.

  18. Effect of titanium incorporation on the structural, mechanical and biocompatible properties of DLC thin films prepared by reactive-biased target ion beam deposition method

    International Nuclear Information System (INIS)

    Bharathy, P. Vijai; Nataraj, D.; Chu, Paul K.; Wang, Huaiyu; Yang, Q.; Kiran, M.S.R.N.; Silvestre-Albero, J.; Mangalaraj, D.

    2010-01-01

    Amorphous diamond like carbon (DLC) and titanium incorporated diamond like carbon (Ti-DLC) thin films were deposited by using reactive-biased target ion beam deposition method. The effects of Ti incorporation and target bias voltage on the microstructure and mechanical properties of the as-deposited films were investigated by means of X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and nano-indentation. It was found that the Ti content in Ti-DLC films gets increased with increasing target bias voltage. At about 4.2 at.% of Ti, uniform sized well dispersed nanocrystals were seen in the DLC matrix. Using FFT analysis, a facility available in the TEM, it was found that the nanocrystals are in cubic TiC phase. Though at the core, the incorporated Ti atoms react with carbon to form cubic TiC; most of the surface exposed Ti atoms were found to react with the atmospheric oxygen to form weakly bonded Ti-O. The presence of TiC nanocrystals greatly modified the sp 3 /sp 2 hybridized bonding ratio and is reflected in mechanical hardness of Ti-DLC films. These films were then tested for their biocompatibility by an invitro cell culturing test. Morphological observation and the cell proliferation test have demonstrated that the human osteoblast cells well attach and proliferate on the surface of Ti incorporated DLC films, suggesting possible applications in bone related implant coatings.

  19. Practical applications of ion beam and plasma processing for improving corrosion and wear protection

    CERN Document Server

    Klingenberg, M L; Wei, R; Demaret, J; Hirvonen, J

    2002-01-01

    A multi-year project for the US Army has been investigating the use of various ion beam and plasma-based surface treatments to improve the corrosion and wear properties of military hardware. These processes are intended to be complementary to, rather than competing with, other promising macro scale coating processes such high velocity oxy-fuel (HVOF) deposition, particularly in non-line-of- sight and flash chrome replacement applications. It is believed that these processes can improve the tribological and corrosion behavior of parts without significantly altering the dimensions of the part, thereby eliminating the need for further machining operations and reducing overall production costs. The ion beam processes chosen are relatively mature, low-cost processes that can be scaled-up. The key methods that have been considered under this program include nitrogen ion implantation into electroplated hard chrome, ion beam assisted chromium and chromium nitride coatings, and plasma-deposited diamond- like carbon an...

  20. Plasma and ion beam processing at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Davis, H.A.; Henins, I.

    1994-01-01

    Efforts are underway at Los Alamos National Laboratory to utilize plasma and intense ion beam science and technology of the processing of advanced materials. A major theme involves surface modification of materials, e.g., etching, deposition, alloying, and implantation. In this paper, we concentrate on two programs, plasma source ion implantation and high-intensity pulsed ion beam deposition

  1. Ion assistance effects on electron beam deposited MgF sub 2 films

    CERN Document Server

    Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

    2002-01-01

    Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

  2. Ion beam processing of bio-ceramics

    International Nuclear Information System (INIS)

    Ektessabi, A.M.

    1995-01-01

    Thin films of bio-inert (TiO 2+α , Al 2 O 3+α ) and bio-active (compounds of calcium and phosphorus oxides, hydroxy-apatite) were deposited on the most commonly used implant materials such as titanium and stainless steel, using a dual-ion-beam deposition system. Rutherford backscattering spectroscopy was carried out for quantitative measurement of the interfacial atomic mixing and the composition of the elements. The experimental results show that by controlling the ion beam energy and current, thin films with very good mechanical properties are obtained as a result of the ion beam mixing within the film and at the interface of the film and substrate. (orig.)

  3. Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

    International Nuclear Information System (INIS)

    Chung, C-K; Wu, B-H

    2006-01-01

    A novel approach for the formation of SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 0 C, while a few particles started to appear when the annealing temperature was increased to 700 0 C. At an annealing temperature of 900 0 C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 0 C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 0 C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 0 C. These particles grew larger at 900 0 C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper

  4. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    Science.gov (United States)

    Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

    2009-01-01

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  5. The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

    International Nuclear Information System (INIS)

    Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

    2010-01-01

    A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

  6. Mechanical characteristics of ultra-long horizontal nanocantilevers grown by real-time feedback control on focused-ion-beam chemical vapour deposition

    International Nuclear Information System (INIS)

    Guo, Dengji; Warisawa, Shin’ichi; Ishihara, Sunao; Kometani, Reo

    2015-01-01

    Focused-ion-beam chemical vapour deposition (FIB-CVD) has been repeatedly proved to be a useful tool for the growth of three-dimensional (3D) micro- and nano-structures. The strategy of real-time feedback control on FIB-CVD was previously proposed and experimentally demonstrated to be effective for growing ultra-long horizontal nanocantilevers. To fabricate various nanoelectromechanical systems that consist of such types of nanocantilever structures, the mechanical characteristics of ultra-long horizontal nanocantilevers should be investigated. In this study, nanocantilevers with an overhang length of up to 35 μm were grown by using a 30 kV Ga + FIB, a beam current of 0.50 pA and phenanthrene (C 14 H 10 ) as the gas source to deposit a diamond-like carbon structure. The Young’s modulus of each nanocantilever was measured by bending the nanocantilever with a nanopillar whose Young’s modulus was known. The average density of each nanocantilever was calculated from the Young’s modulus and the measured resonant frequency. We found that the mechanical characteristics of each nanocantilever depended on the length of the nanocantilever if the strategy of real-time feedback control was applied in fabrication. The Young’s moduli and the averaged densities of the nanocantilevers with a length of 11 to 34 μm were found to be 86 to 254 GPa and 1950 to 5750 kg m −3 , respectively. With the increase of the overhang length, the Young’s modulus and the average density were found to gradually increase. (paper)

  7. Materials science education: ion beam modification and analysis of materials

    Science.gov (United States)

    Zimmerman, Robert; Muntele, Claudiu; Ila, Daryush

    2012-08-01

    The Center for Irradiation of Materials (CIM) at Alabama A&M University (http://cim.aamu.edu) was established in 1990 to serve the University in its research, education and services to the need of the local community and industry. CIM irradiation capabilities are oriented around two tandem-type ion accelerators with seven beam lines providing high-resolution Rutherford backscattering spectrometry, MeV focus ion beam, high-energy ion implantation and irradiation damage studies, particle-induced X-ray emission, particle-induced gamma emission and ion-induced nuclear reaction analysis in addition to fully automated ion channeling. One of the two tandem ion accelerators is designed to produce high-flux ion beam for MeV ion implantation and ion irradiation damage studies. The facility is well equipped with a variety of surface analysis systems, such as SEM, ESCA, as well as scanning micro-Raman analysis, UV-VIS Spectrometry, luminescence spectroscopy, thermal conductivity, electrical conductivity, IV/CV systems, mechanical test systems, AFM, FTIR, voltammetry analysis as well as low-energy implanters, ion beam-assisted deposition and MBE systems. In this presentation, we will demonstrate how the facility is used in material science education, as well as providing services to university, government and industry researches.

  8. The effect of ion-beam induced strain on the nucleation density of chemical vapour deposited diamond

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

    1995-01-01

    The effect of ion implantation on the nucleation of CVD diamond on silicon and diamond substrates has been investigated. The strategy employed is to create laterally confined regions of strain in the substrates by focused MeV implantation of light ions. Raman Microscopy has been employed to obtain spatially resolved maps of the strain in these implanted regions. On diamond substrates a homo-epitaxial CVD diamond film was grown on top of both the implanted and unimplanted regions of the substrate. Raman analysis of the film grown on top of the implanted region revealed it to be under slightly tensile strain as compared to that grown on the unimplanted diamond substrate. The film deposited on the implanted portion of the diamond showed a lower fluorescence background; indicating a lower concentration of incorporated defects. These results suggest that the strain and defects in the diamond substrate material have an important influence on the quality of the homo-epitaxially grown diamond films. 6 refs., 5 figs

  9. Intense ion beam generator

    International Nuclear Information System (INIS)

    Humphries, S. Jr.; Sudan, R.N.

    1977-01-01

    Methods and apparatus for producing intense megavolt ion beams are disclosed. In one embodiment, a reflex triode-type pulsed ion accelerator is described which produces ion pulses of more than 5 kiloamperes current with a peak energy of 3 MeV. In other embodiments, the device is constructed so as to focus the beam of ions for high concentration and ease of extraction, and magnetic insulation is provided to increase the efficiency of operation

  10. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

  11. Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching

    Science.gov (United States)

    Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming

    2016-04-01

    In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 1010 cm-2) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.

  12. Dosimetry and LET spectrometry in C 290 MeV/n and Ne 400 MeV/n HIMAC ion beam by different TLD's, TED based LET spectrometers, and Si energy-deposition spectrometer

    International Nuclear Information System (INIS)

    Spurny, F.; Brabcova, K.; Jadrnickova, I.; Uchihori, Y.; Kitamura, H.; Yasuda, N.; Molokanov, A. G.

    2009-01-01

    The sets of track etched detectors based (TED) spectrometer's of the linear energy transfer (LET) have been, together with two types of thermoluminescent detectors (TLD)and MDU- Liulin energy deposition spectrometer exposed in the C 290 MeV/n and Ne 400 MeV/n ion beams at the HlMAC installation at NIRS, Chiba, Japan. The experiment has been performed in the frame of NPI project 20P241 agreed by HlMAC P AC at the beginning of 2008 year. Up to now, moxstle only results obtained in C-ion beam have been treated and analyzed. Sets of TED spectrometer's and TLD detectors have been exposed in 19 depths in the C-ion beam with expected LET values of primary particles from 13 keV/μm in water, through the Bragg peak area up to two depth behind the Bragg peak. The contribution of fragments to total number of events, and to the energy absorbed in Si has been determined, when possible separately for different fragments. In all cases also total contribution of fragments (and other secondary particles) to the total number of energy deposition events and to the absorbed dose has been estimated. LET and energy deposition spectra obtained will be compared together , a good agreement of data has bee stated. Some of results have been also compared with those obtained by calculation by means of PHITS code. (authors)

  13. Efficient focusing of 8 keV X-rays with multilayer Fresnel zone plates fabricated by atomic layer deposition and focused ion beam milling

    International Nuclear Information System (INIS)

    Mayer, Marcel; Keskinbora, Kahraman; Grévent, Corinne; Szeghalmi, Adriana; Knez, Mato; Weigand, Markus; Snigirev, Anatoly; Snigireva, Irina; Schütz, Gisela

    2013-01-01

    The fabrication and performance of multilayer Al 2 O 3 /Ta 2 O 5 Fresnel zone plates in the hard X-ray range and a discussion of possible future developments considering available materials are reported. Fresnel zone plates (FZPs) recently showed significant improvement by focusing soft X-rays down to ∼10 nm. In contrast to soft X-rays, generally a very high aspect ratio FZP is needed for efficient focusing of hard X-rays. Therefore, FZPs had limited success in the hard X-ray range owing to difficulties of manufacturing high-aspect-ratio zone plates using conventional techniques. Here, employing a method of fabrication based on atomic layer deposition (ALD) and focused ion beam (FIB) milling, FZPs with very high aspect ratios were prepared. Such multilayer FZPs with outermost zone widths of 10 and 35 nm and aspect ratios of up to 243 were tested for their focusing properties at 8 keV and shown to focus hard X-rays efficiently. This success was enabled by the outstanding layer quality thanks to ALD. Via the use of FIB for slicing the multilayer structures, desired aspect ratios could be obtained by precisely controlling the thickness. Experimental diffraction efficiencies of multilayer FZPs fabricated via this combination reached up to 15.58% at 8 keV. In addition, scanning transmission X-ray microscopy experiments at 1.5 keV were carried out using one of the multilayer FZPs and resolved a 60 nm feature size. Finally, the prospective of different material combinations with various outermost zone widths at 8 and 17 keV is discussed in the light of the coupled wave theory and the thin-grating approximation. Al 2 O 3 /Ir is outlined as a promising future material candidate for extremely high resolution with a theoretical efficiency of more than 20% for as small an outermost zone width as 10 nm at 17 keV

  14. Characterization of PZT Capacitor Structures with Various Electrode Materials Processed In-Situ Using AN Automated, Rotating Elemental Target, Ion Beam Deposition System

    Science.gov (United States)

    Gifford, Kenneth Douglas

    Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to

  15. Negative ion beam processes

    International Nuclear Information System (INIS)

    Hayward, T.D.; Lawrence, G.P.; Bentley, R.F.; Malanify, J.J.; Jackson, J.A.

    1975-06-01

    Los Alamos Scientific Laboratory fiscal year 1975 work on production of intense, very bright, negative hydrogen (H - ), ion beams and conversion of a high-energy (a few hundred MeV) negative beam into a neutral beam are described. The ion source work has used a cesium charge exchange source that has produced H - ion beams greater than or equal to 10 mA (about a factor of 10 greater than those available 1 yr ago) with a brightness of 1.4 x 10 9 A/m 2 -rad 2 (about 18 times brighter than before). The high-energy, neutral beam production investigations have included measurements of the 800-MeV H - -stripping cross section in hydrogen gas (sigma/sub -10/, tentatively 4 x 10 -19 cm 2 ), 3- to 6-MeV H - -stripping cross sections in a hydrogen plasma (sigma/sub -10/, tentatively 2 to 4 x 10 -16 cm 2 ), and the small-angle scattering that results from stripping an 800-MeV H - ion beam to a neutral (H 0 ) beam in hydrogen gas. These last measurements were interrupted by the Los Alamos Meson Physics Facility shutdown in December 1974, but should be completed early in fiscal year 1976 when the accelerator resumes operation. Small-angle scattering calculations have included hydrogen gas-stripping, plasma-stripping, and photodetachment. Calculations indicate that the root mean square angular spread of a 390-MeV negative triton (T - ) beam stripped in a plasma stripper may be as low as 0.7 μrad

  16. On plasma ion beam formation in the Advanced Plasma Source

    International Nuclear Information System (INIS)

    Harhausen, J; Foest, R; Hannemann, M; Ohl, A; Brinkmann, R P; Schröder, B

    2012-01-01

    The Advanced Plasma Source (APS) is employed for plasma ion-assisted deposition (PIAD) of optical coatings. The APS is a hot cathode dc glow discharge which emits a plasma ion beam to the deposition chamber at high vacuum (p ≲ 2 × 10 −4 mbar). It is established as an industrial tool but to date no detailed information is available on plasma parameters in the process chamber. As a consequence, the details of the generation of the plasma ion beam and the reasons for variations of the properties of the deposited films are barely understood. In this paper the results obtained from Langmuir probe and retarding field energy analyzer diagnostics operated in the plasma plume of the APS are presented, where the source was operated with argon. With increasing distance to the source exit the electron density (n e ) is found to drop by two orders of magnitude and the effective electron temperature (T e,eff ) drops by a factor of five. The parameters close to the source region read n e ≳ 10 11 cm −3 and T e,eff ≳ 10 eV. The electron distribution function exhibits a concave shape and can be described in the framework of the non-local approximation. It is revealed that an energetic ion population leaves the source region and a cold ion population in the plume is build up by charge exchange collisions with the background neutral gas. Based on the experimental data a scaling law for ion beam power is deduced, which links the control parameters of the source to the plasma parameters in the process chamber. (paper)

  17. Focused ion beam technology

    International Nuclear Information System (INIS)

    Gamo, K.

    1993-01-01

    Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author)

  18. Heavy ion beam probing

    International Nuclear Information System (INIS)

    Hickok, R.L.

    1980-07-01

    This report consists of the notes distributed to the participants at the IEEE Mini-Course on Modern Plasma Diagnostics that was held in Madison, Wisconsin in May 1980. It presents an overview of Heavy Ion Beam Probing that briefly describes the principles and discuss the types of measurements that can be made. The problems associated with implementing beam probes are noted, possible variations are described, estimated costs of present day systems, and the scaling requirements for large plasma devices are presented. The final chapter illustrates typical results that have been obtained on a variety of plasma devices. No detailed calculations are included in the report, but a list of references that will provide more detailed information is included

  19. Ion beam analysis

    International Nuclear Information System (INIS)

    Bethge, K.

    1995-01-01

    Full text: Ion beam analysis is an accelerator application area for the study of materials and the structure of matter; electrostatic accelerators of the Van de Graaff or Dynamitron type are often used for energies up to a few MeV. Two types of machines are available - the single-ended accelerator type with higher beam currents and greater flexibility of beam management, or the tandem accelerator, limited to atomic species with negative ions. The accelerators are not generally installed at specialist accelerator laboratories and have to be easy to maintain and simple to operate. The most common technique for industrial research is Rutherford Back Scattering Spectrometry (RBS). Helium ions are the preferred projectiles, since at elevated energies (above 3 MeV) nuclear resonance scattering can be used to detect photons associated with target molecules containing elements such as carbon, nitrogen or oxygen. Due to the large amount of available data on nuclear reactions in this energy range, activation analysis (detecting trace elements by irradiating the sample) can be performed with charged particles from accelerators over a wider range of atoms than with the conventional use of neutrons, which is more suited to light elements. Resonance reactions have been used to detect trace metals such as aluminium, titanium and vanadium. Hydrogen atoms are vital to the material performance of several classes of materials, such as semiconductors, insulators and ceramics. Prudent selection of the projectile ion aids the analysis of hydrogen composition; the technique is then a simple measurement of the emitted gamma radiation. Solar cell material and glass can be analysed in this way. On a world-wide basis, numerous laboratories perform ion beam analysis for research purposes; considerable work is carried out in cooperation between scientific laboratories and industry, but only a few laboratories provide a completely commercial service

  20. Ion beam inertial fusion

    International Nuclear Information System (INIS)

    Bangerter, R.O.

    1995-01-01

    About twenty years ago, A. W. Maschke of Brookhaven National Laboratory and R. L. Martin of Argonne National Laboratory recognized that the accelerators that have been developed for high energy and nuclear physics are, in many ways, ideally suited to the requirements of inertial fusion power production. These accelerators are reliable, they have a long operating life, and they can be efficient. Maschke and Martin noted that they can focus ion beams to small focal spots over distances of many meters and that they can readily operate at the high pulse repetition rates needed for commercial power production. Fusion, however, does impose some important new constraints that are not important for high energy or nuclear physics applications. The most challenging new constraint from a scientific standpoint is the requirement that the accelerator deliver more than 10 14 W of beam power to a small quantity (less than 100 mg) of matter. The most challenging constraint from an engineering standpoint is accelerator cost. Maschke showed theoretically that accelerators could produce adequate work. Heavy-ion fusion is widely recognized to be a promising approach to inertial fusion power production. It provides an excellent opportunity to apply methods and technology developed for basic science to an important societal need. The pulsed-power community has developed a complementary, parallel approach to ion beam fusion known as light-ion fusion. The talk will discuss both heavy-ion and light-ion fusion. It will explain target physics requirements and show how they lead to constraints on the usual accelerator parameters such as kinetic energy, current, and emittance. The talk will discuss experiments that are presently underway, specifically experiments on high-current ion sources and injectors, pulsed-power machines recirculating induction accelerators, and transverse beam combining. The talk will give a brief description of a proposed new accelerator called Elise

  1. Pulsed high current ion beam processing equipment

    International Nuclear Information System (INIS)

    Korenev, S.A.; Perry, A.

    1995-01-01

    A pulsed high voltage ion source is considered for use in ion beam processing for the surface modification of materials, and deposition of conducting films on different substrates. The source consists of an Arkad'ev-Marx high voltage generator, a vacuum ion diode based on explosive ion emission, and a vacuum chamber as substrate holder. The ion diode allows conducting films to be deposited from metal or allow sources, with ion beam mixing, onto substrates held at a pre-selected temperature. The main variables can be set in the ranges: voltage 100-700 kV, pulse length 0.3 μs, beam current 1-200 A depending on the ion chosen. The applications of this technology are discussed in semiconductor, superconductor and metallizing applications as well as the direction of future development and cost of these devices for commercial application. 14 refs., 6 figs

  2. Progress toward a microsecond duration, repetitively pulsed, intense- ion beam

    International Nuclear Information System (INIS)

    Davis, H.A.; Olson, J.C.; Reass, W.A.; Coates, D.M.; Hunt, J.W.; Schleinitz, H.M.; Greenly, J.B.

    1996-01-01

    A number of intense ion beams applications are emerging requiring repetitive high-average-power beams. These applications include ablative deposition of thin films, rapid melt and resolidification for surface property enhancement, advanced diagnostic neutral beams for the next generation of Tokamaks, and intense pulsed-neutron sources. We are developing a 200-250 keV, 15 kA, 1 μs duration, 1-30 Hz intense ion beam accelerator to address these applications

  3. Characterization of ion beam induced nanostructures

    International Nuclear Information System (INIS)

    Ghatak, J.; Satpati, B.; Umananda, M.; Kabiraj, D.; Som, T.; Dev, B.N.; Akimoto, K.; Ito, K.; Emoto, T.; Satyam, P.V.

    2006-01-01

    Tailoring of nanostructures with energetic ion beams has become an active area of research leading to the fundamental understanding of ion-solid interactions at nanoscale regime and with possible applications in the near future. Rutherford backscattering spectrometry (RBS), high resolution transmission electron microscopy (HRTEM) and asymmetric X-ray Bragg-rocking curve experimental methods have been used to characterize ion-induced effects in nanostructures. The possibility of surface and sub-surface/interface alloying at nano-scale regime, ion-beam induced embedding, crater formation, sputtering yield variations for systems with isolated nanoislands, semi-continuous and continuous films of noble metals (Au, Ag) deposited on single crystalline silicon will be reviewed. MeV-ion induced changes in specified Au-nanoislands on silicon substrate are tracked as a function of ion fluence using ex situ TEM. Strain induced in the bulk silicon substrate surface due to 1.5 MeV Au 2+ and C 2+ ion beam irradiation is determined by using HRTEM and asymmetric Bragg X-ray rocking curve methods. Preliminary results on 1.5 MeV Au 2+ ion-induced effects in nanoislands of Co deposited on silicon substrate will be discussed

  4. Nitridation of vanadium by ion beam irradiation

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  5. In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir

    International Nuclear Information System (INIS)

    Gao, Y.; Mueller, A.H.; Irene, E.A.; Auciello, O.; Krauss, A.; Schultz, J.A.

    1999-01-01

    (Ba 0.5 ,Sr 0.5 )TiO 3 (BST) thin films were deposited on MgO, Si, SiO 2 and Ir surfaces by ion beam sputter deposition in oxygen at 700 degree C. In situ spectroscopic ellipsometry (SE) has been used to investigate the evolution of the BST films on different surfaces during both deposition and postannealing processes. First, the optical constants of the BST films in the photon energy range of 1.5 - 4.5 eV were determined by SE analysis on crystallized BST films deposited on MgO single crystal substrates. The interfaces in BST/Si and BST/SiO 2 /Si structure were examined by SE and Auger electron spectroscopy depth profiles. Subcutaneous oxidation in the BST/Ir structure was observed by in situ SE during both ion beam sputter deposition and postdeposition annealing in oxygen at 700 degree C. A study of the thermal stability of the Ir/TiN/SiO 2 /Si structure in oxygen at 700 degree C was carried out using in situ SE. The oxidation of Ir was confirmed by x-ray diffraction. The surface composition and morphology evolution after oxidation were investigated by time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and atomic force microscopy. It has been found that Ti from the underlying TiN barrier layer diffused through the Ir layer onto the surface and thereupon became oxidized. It was also shown that the surface roughness increases with increasing oxidation time. The implications of the instability of Ir/TiN/SiO 2 /Si structure on the performance of capacitor devices based on this substrate are discussed. It has been shown that a combination of in situ SE and TOF-MSRI provides a powerful methodology for in situ monitoring of complex oxide film growth and postannealing processes. copyright 1999 American Vacuum Society

  6. Friction of self-lubricating surfaces by ion beam techniques. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.S.; Rai, A.K.

    1992-05-01

    UES, Inc. conducted a research and development program designed to establish conditions for ion implantation/mixing of suitable additives into the surfaces of bulk ceramics and metals for obtaining self-lubricating low friction and wear characteristics. The substrates considered were ZrO{sub 2}, Al{sub 2}O{sub 3}, Si{sub 3}N{sub 4}, steel and Ni-base superalloy. The lubricant additives chosen were BaF{sub 2}/CaF{sub 2}Ag, MoS{sub 2}, WS{sub 2}and B{sub 2}O{sub 3}. The initial tasks of the program were to synthesis these lubricant compounds by co-implantation of constituent elements if sufficient beams of desired elements were obtained. The final tasks were to investigate high energy (MeV) ion mixing of deposited coatings as well as to investigate ion beam assisted deposition using low energy ion beams. It was shown that MoS{sub 2} can be synthesized by co-implantation of Mo{sup +} and S{sup +} in ceramic materials with appropriate choice of energies to obtain nearly overlapping depth profiles. The sliding life of DC magnetron sputtered MoS{sub 2} films of thicknesses {approximately}7500{Angstrom} on ceramic materials such as sapphire, Si{sub 3}N{sub 4} and ZrO{sub 3} were improved by ten to thousand fold after 2 Mev Ag{sup +} ion mixing. Ion beam assisted deposition (IBAD) and ion beam mixing were utilized to fabricate self-lubricating coatings of CaF{sub 2}/Ag and BaF/CaF{sub 2}/Ag composites.

  7. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    Energy Technology Data Exchange (ETDEWEB)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  8. Focused ion beam (FIB) milling of electrically insulating specimens using simultaneous primary electron and ion beam irradiation

    International Nuclear Information System (INIS)

    Stokes, D J; Vystavel, T; Morrissey, F

    2007-01-01

    There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials

  9. Ion-Assisted Pulsed Laser Deposition of amorphous tetrahedral-coordinated carbon films

    Science.gov (United States)

    Friedmann, T. A.; Tallant, D. R.; Sullivan, J. P.; Siegal, M. P.; Simpson, R. L.

    1994-04-01

    A parametric study has been performed of amorphous tetrahedral carbon (a-tC) films produced by ion-assisted pulsed laser deposition (IAPLD). The ion voltage, current density, and feed gas composition (nitrogen in argon) have been varied. The resultant films were characterized by thickness, residual stress, Raman spectroscopy, and electrical resistivity. The Raman spectra have been fit to two gaussian peaks, the so called graphitic (G) peak and the disorder (D) peak. It has been found that the magnitude of the D peak and the residual compressive stress are inversely correlated. At low beam voltages and currents, the magnitude of the D peak is low, increasing as the ion beam voltage and current are raised. The ion beam voltage has the most dramatic effect on the magnitude of the D peak. At low voltages (200-500 V) the magnitude of the D peak is greater for ion beams with high percentages of nitrogen possibly indicative of C-N bonding in the films. At higher voltages (500-1500 V) the D peak intensity is less sensitive to the nitrogen content of the beam.

  10. Influence of residual Ar+ in Ar cluster ion beam for DLC film formation

    International Nuclear Information System (INIS)

    Kitagawa, Teruyuki; Miyauchi, Kazuya; Toyoda, Noriaki; Kanda, Kazuhiro; Ikeda, Tokumi; Tsubakino, Harushige; Matsuo, Jiro; Matsui, Shinji; Yamada, Isao

    2003-01-01

    In order to study the influences of residual Ar monomer ion (Ar + ) on sp 2 content and hardness of diamond like carbon (DLC) films formed by Ar cluster ion beam assisted deposition, Ar cluster ion, Ar + and their mixed ions (Ar cluster ion and Ar + ) bombardments were performed during evaporation of C 60 . From near edge X-ray absorption fine structure (NEXAFS) and Raman spectroscopy measurements, lower sp 2 content in the carbon films was obtained with Ar cluster ion bombardment than that with Ar + and mixed ion. Furthermore higher hardness and smooth surface were shown with Ar cluster ion bombardments. Therefore it was important to reduce Ar + in Ar cluster ion beams to obtain hard DLC films with flat surface

  11. Cooling of molecular ion beams

    International Nuclear Information System (INIS)

    Wolf, A.; Krohn, S.; Kreckel, H.; Lammich, L.; Lange, M.; Strasser, D.; Grieser, M.; Schwalm, D.; Zajfman, D.

    2004-01-01

    An overview of the use of stored ion beams and phase space cooling (electron cooling) is given for the field of molecular physics. Emphasis is given to interactions between molecular ions and electrons studied in the electron cooler: dissociative recombination and, for internally excited molecular ions, electron-induced ro-vibrational cooling. Diagnostic methods for the transverse ion beam properties and for the internal excitation of the molecular ions are discussed, and results for phase space cooling and internal (vibrational) cooling are presented for hydrogen molecular ions

  12. Process heat exchanger for SO3 decomposer fabricated with Ni-based alloys surface modified by SiC film deposition and N ion beam bombardment

    International Nuclear Information System (INIS)

    Park, Jae-Won; Kim, Hyung-Jin; Choi, Yong-Woon; Kim, Yong-Wan

    2007-01-01

    In the iodine-sulfur (IS) cycle for the hydrogen production using the high temperature gas-cooled reactor (HTGR), one of the important components is the SO 3 decomposer which generates SO 2 and SO 3 gases under high temperature conditions. Since this environment is extremely corrosive, the materials used for the decomposer should meet excellent mechanical properties at the elevated temperature as well as high corrosion resistance in SO 2 /SO 3 atmospheres. In general, ceramics are protective against the corrosion, but metals exhibit limited corrosion resistance. In this work, the ceramic coating on the metallic substrate was studied. We selected SiC as coating materials and Ni-based alloys as the substrate materials. Since the adhesion between the coated layer and the substrate is most crucial in this application, we attempted to develop Ion Beam Mixing (IBM) technique to produce a highly adherent coated layer. For the fabrication of process heat exchange for SO 3 decomposer, the diffusion bonding at ∼900 .deg. C is employed because this temperature does not affect the mechanical properties of materials

  13. Nanostructuring by ion beam

    International Nuclear Information System (INIS)

    Valbusa, U.; Boragno, C.; Buatier de Mongeot, F.

    2003-01-01

    In metals, the surface curvature dependence of the sputtering yield and the presence of an extra energy barrier whenever diffusing adatoms try to descend step edges, produce a similar surface instability, which builds up regular patterns. By tuning the competition between these two mechanisms, it is possible to create self-organized structures of the size of few nanometers. Height, lateral distance and order of the structures change with the deposition parameters like ion energy, dose, incident angle and substrate temperature. The paper offers an overview of the experiments carried out and foresees possible applications of these results in the area of material science

  14. Ion beams in materials processing and analysis

    CERN Document Server

    Schmidt, Bernd

    2012-01-01

    This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.

  15. Ion-beam Plasma Neutralization Interaction Images

    International Nuclear Information System (INIS)

    Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

    2002-04-01

    Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented

  16. Ion-beam Plasma Neutralization Interaction Images

    Energy Technology Data Exchange (ETDEWEB)

    Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

    2002-04-09

    Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented.

  17. Ion assisted deposition of thermally evaporated Ag and Al films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Makous, J.L.; Kim, S.Y.; University of Arizona, Physics Department, Tucson, Arizona 85721; Aju University, Physics Department, Suwon, Korea)

    1989-01-01

    Optical, electrical, and microstructural effects of Ar ion bombardment and Ar incorporation on thermally evaporated Ag and Al thin films are investigated. The results show that as the momentum supplied to the growing films by the bombarding ions per arriving metal atom increases, the refractive index at 632.8 nm increases and the extinction coefficient decreases, lattice spacing expands, grain size decreases, electrical resistivity increases, and trapped Ar increases slightly. In Ag films, stress reverses from tensile to compressive and in Al films compressive stress increases. In the Al films the change in optical constants can be explained by the variation in void volume. The reversal of stress from tensile to compressive in Ag films requires a threshold level of momentum. The increase in electrical resistivity is related to the decrease in grain size and increase in trapped Ar in both types of film. Many of these properties correlate well with the momentum transferred, suggesting that the momentum is an important physical parameter in describing the influence of ion beam on growing thin films and determining the characteristics of thin metal films prepared by ion assisted deposition

  18. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  19. Bright focused ion beam sources based on laser-cooled atoms

    Science.gov (United States)

    McClelland, J. J.; Steele, A. V.; Knuffman, B.; Twedt, K. A.; Schwarzkopf, A.; Wilson, T. M.

    2016-01-01

    Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga+ liquid metal ion source. In this review we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future. PMID:27239245

  20. Bright focused ion beam sources based on laser-cooled atoms

    Energy Technology Data Exchange (ETDEWEB)

    McClelland, J. J.; Wilson, T. M. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Steele, A. V.; Knuffman, B.; Schwarzkopf, A. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); zeroK NanoTech, Gaithersburg, Maryland 20878 (United States); Twedt, K. A. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Maryland Nanocenter, University of Maryland, College Park, Maryland 20742 (United States)

    2016-03-15

    Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga{sup +} liquid metal ion source. In this review, we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future.

  1. Materials Science with Ion Beams

    CERN Document Server

    Bernas, Harry

    2010-01-01

    This book introduces materials scientists and designers, physicists and chemists to the properties of materials that can be modified by ion irradiation or implantation. These techniques can help design new materials or to test modified properties; novel applications already show that ion-beam techniques are complementary to others, yielding previously unattainable properties. Also, ion-beam interactions modify materials at the nanoscale, avoiding the often detrimental results of lithographic or chemical techniques. Here, the effects are related to better-known quasi-equilibrium thermodynamics, and the consequences to materials are discussed with concepts that are familiar to materials science. Examples addressed concern semiconductor physics, crystal and nanocluster growth, optics, magnetism, and applications to geology and biology.

  2. Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides); Synthese assistee par faisceau d'ions d'agregats dans les verres (argent et chalcogenures de plomb)

    Energy Technology Data Exchange (ETDEWEB)

    Espiau de Lamaestre, R

    2005-04-15

    This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

  3. Deflagration wave formed by ion beam, 3

    International Nuclear Information System (INIS)

    Niu, Keishiro; Abe, Takashi; Tamba, Moritake.

    1980-01-01

    An analysis is given for the structure of the deflagration wave which is formed in a target bombarded by an ion beam. Stationary deflagration and/or detonation waves are formed at the surface of the target in a case in which the reaction energy of direct fusion and/or the beam energy deposited in the target are less than a critical value. On the other hand, no solution for stationary wave exists, if the energy deposited in the wave exceeds a critical value. In the latter case, the time-dependent fundamental equations reduce approximately to a self-similar type of equations. Numerical integrations are carried out for this type of differential equations, and an example of self-similar deflagration wave numerically obtained is plotted in the figures. (author)

  4. Shunting arc plasma source for pure carbon ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Koguchi, H.; Sakakita, H.; Kiyama, S.; Shimada, T.; Sato, Y.; Hirano, Y. [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2012-02-15

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA/mm{sup 2} at the peak of the pulse.

  5. Shunting arc plasma source for pure carbon ion beam.

    Science.gov (United States)

    Koguchi, H; Sakakita, H; Kiyama, S; Shimada, T; Sato, Y; Hirano, Y

    2012-02-01

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA∕mm(2) at the peak of the pulse.

  6. Electrohydrodynamic emitters of ion beams

    International Nuclear Information System (INIS)

    Dudnikov, V.G.; Shabalin, A.L.

    1990-01-01

    Physical processes determining generation of ion beams with high emission current density in electrohydrodynamic emitters are considered. Electrohydrodynamic effects developing in ion emission features and kinetics of ion interaction in beams with high density are discussed. Factors determining the size of the emission zone, emission stability at high and low currents, cluster generation, increase of energy spread and decrease of brightness are analyzed. Problems on practical provision of stable EHD emitter functioning are considered. 94 refs.; 8 figs.; 1 tab

  7. Ion beam analysis fundamentals and applications

    CERN Document Server

    Nastasi, Michael; Wang, Yongqiang

    2015-01-01

    Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization.The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nucle

  8. Control of colliding ion beams

    International Nuclear Information System (INIS)

    Salisbury, W.W.

    1985-01-01

    This invention relates to a method and system for enhancing the power-producing capability of a nuclear fusion reactor, and more specifically to methods and structure for enhancing the ion density in a directed particle fusion reactor. In accordance with the invention, oppositely directed ion beams constrained to helical paths pass through an annular reaction zone. The object is to produce fusion reactions due to collisions between the ion beams. The reaction zone is an annulus as between an inner-cylindrical electrode and an outer-cylindrical coaxial electrode. The beams are enhanced in ion density at spaced points along the paths by providing spline structures protruding from the walls of the electrodes into the reaction zone. This structure causes variations in the electric field along the paths followed by the ion beams. Such fields cause the beams to be successively more and less concentrated as the beams traverse the reaction zone. Points of high concentration are the points at which fusion-producing collisions are most likely to take place

  9. Numerical analysis of ac loss in bifilar stacks and coils of ion beam assisted deposition YBCO coated conductors

    International Nuclear Information System (INIS)

    Nguyen, Doan N.; Ashworth, Stephen P.; Willis, Jeffrey O.

    2009-01-01

    In this paper we present a finite element model using the commercial COMSOL software package for calculating the ac loss in bifilar stacks of high temperature superconducting tape. In the model, the current-voltage relationship characterizing the superconducting properties is assumed to follow a power law. The calculations were performed for infinite bifilar stacks with different values of layer-to-layer separation D. With appropriate settings for the boundary conditions, the numerical results agree well with the analytical data obtained from a recently proposed model [J. R. Clem, Phys. Rev. B 77, 134506 (2008)]. The numerical approach was also used to investigate the end effects in a bifilar stack to answer the following question: how many layers away from the end of a stack are required before the environment of a given layer is identical to that in an infinite stack? We find that the answer to this question depends strongly on the value of D. Based on this study, a model for calculating the ac loss in bifilar noninductively wound coils with a finite number of turns is proposed

  10. Friction and wear study of diamond-like carbon gradient coatings on Ti6Al4V substrate prepared by plasma source ion implant-ion beam enhanced deposition

    International Nuclear Information System (INIS)

    Jiang, Shuwen; Jiang Bin; Li Yan; Li Yanrong; Yin Guangfu; Zheng Changqiong

    2004-01-01

    DLC gradient coatings had been deposited on Ti6Al4V alloy substrate by plasma source ion implantation-ion beam enhanced deposition method and their friction and wear behavior sliding against ultra high molecular weight polyethylene counterpart were investigated. The results showed that DLC gradient coated Ti6Al4V had low friction coefficient, which reduced 24, 14 and 10% compared with non-coated Ti6Al4V alloy under dry sliding, lubrication of bovine serum and 0.9% NaCl solution, respectively. DLC gradient coated Ti6Al4V showed significantly improved wear resistance, the wear rate was about half of non-coated Ti6Al4V alloy. The wear of ultra high molecular weight polyethylene counterpart was also reduced. High adhesion to Ti6Al4V substrate of DLC gradient coatings and surface structure played important roles in improved tribological performance, serious oxidative wear was eliminated when DLC gradient coating was applied to the Ti6Al4V alloy

  11. Lithium ion beam driven hohlraums for PBFA II

    International Nuclear Information System (INIS)

    Dukart, R.J.

    1994-01-01

    In our light ion inertial confinement fusion (ICF) program, fusion capsules are driven with an intense x-ray radiation field produced when an intense beam of ions penetrates a radiation case and deposits energy in a foam x-ray conversion region. A first step in the program is to generate and measure these intense fields on the Particle Beam Fusion Accelerator II (PBFA II). Our goal is to generate a 100-eV radiation temperature in lithium ion beam driven hohlraums, the radiation environment which will provide the initial drive temperature for ion beam driven implosion systems designed to achieve high gain. In this paper, we describe the design of such hohlraum targets and their predicted performance on PBFA II as we provide increasing ion beam intensities

  12. Intense ion beam research at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

    1992-01-01

    Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long-pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle energy distributions in large, dense, ignited tokamaks such as ITER

  13. Intense ion beam research at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

    1993-01-01

    Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle distributions in large, dense, ignited tokamaks such as ITER

  14. Influence of ion beam and geometrical parameters on properties of Si thin films grown by Ar ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, Carsten; Feder, Rene; Neumann, Horst [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Leipzig (Germany)

    2012-07-01

    Ion beam sputtering (IBS) offers, in contrast to other physical vapour deposition techniques, such as magnetron sputtering or electron beam evaporation, the opportunity to change the properties of the layer forming particles (sputtered and scattered particles) by varying ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, emission angle). Consequently, these effects can be utilized to tailor thin film properties [1]. The goal is to study systematically the correlations between the primary and secondary parameters and, at last, the effects on the properties of Si thin films, such as optical properties, stress, surface topography and composition. First experimental results are presented for Ar-ion sputtering of Si.

  15. Optimization of ion assist beam deposition of magnesium oxide template films during initial nucleation and growth

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R [Los Alamos National Laboratory; Matias, Vladimir [Los Alamos National Laboratory; Stan, Liliana [Los Alamos National Laboratory; De Paula, Raymond F [Los Alamos National Laboratory; Hammond, Robert H [STANFORD UNIV.; Clemens, Bruce M [STANFOED UNIV.

    2010-01-01

    Recent efforts in investigating the mechanism of ion beam assisted deposition (IBAD) of biaxially textured thin films of magnesium oxide (MgO) template layers have shown that the texture develops suddenly during the initial 2 nm of deposition. To help understand and tune the behavior during this initial stage, we pre-deposited thin layers of MgO with no ion assist prior to IBAD growth of MgO. We found that biaxial texture develops for pre-deposited thicknesses < 2 nm, and that the thinnest layer tested, at 1 nm, resulted in the best qualitative RHEED image, indicative of good biaxial texture development. The texture developed during IBAD growth on the 1.5 nm pre-deposited layer is slightly worse and IBAD growth on the 2 nm pre-deposited layer produces a fiber texture. Application of these layers on an Al{sub 2}O{sub 3} starting surface, which has been shown to impede texture development, improves the overall quality of the IBAD MgO and has some of the characteristics of a biaxially texture RHEED pattern. It is suggested that the use of thin (<2 nm) pre-deposited layers may eliminate the need for bed layers like Si{sub 3}N{sub 4} and Y{sub 2}O{sub 3} that are currently thought to be required for proper biaxial texture development in IBAD MgO.

  16. Maskless, resistless ion beam lithography

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Qing [Univ. of California, Berkeley, CA (United States)

    2003-01-01

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O2+, BF2+, P+ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF2+, over 90% of O2+ and P+ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He+ beam is as high as 440 A/cm2 • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O2+ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O2+ ions with the dose of 1015 cm-2. The oxide can then serve as a hard mask for patterning of the Si film. The

  17. Maskless, resistless ion beam lithography

    International Nuclear Information System (INIS)

    Ji, Qing

    2003-01-01

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O 2 + , BF 2 + , P + etc., for surface modification and doping applications. With optimized source condition, around 85% of BF 2 + , over 90% of O 2 + and P + have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He + beam is as high as 440 A/cm 2 · Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O 2 + ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O 2 + ions with the dose of 10 15 cm -2 . The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P

  18. Ion Beam Analysis, structure and corrosion studies of nc-TiN/a-Si{sub 3}N{sub 4} nanocomposite coatings deposited by sputtering on AISI 316L

    Energy Technology Data Exchange (ETDEWEB)

    García, J. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Canto, C.E. [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Andrade, E., E-mail: andrade@fisica.unam.mx [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rodríguez, E.; Jiménez, O. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Solis, C.; Lucio, O.G. de [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rocha, M.F. [ESIME-Z, Instituto Politécnico Nacional, ALM Zacatenco, México, D.F. 07738 (Mexico)

    2014-07-15

    In this work, nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4}, were deposited on AISI 316L stainless steel substrate by a DC and RF reactive magnetron co-sputtering technique using an Ar–N{sub 2} plasma. The structure of the coatings was characterized by means of XRD (X-ray Diffraction). The substrate and coating corrosion resistance were evaluated by potentiodynamic polarization using a Ringer solution as electrolyte. Corrosion tests were conducted with the purpose to evaluate the potential of this coating to be used on biomedical alloys. IBA (Ion Beam Analysis) techniques were applied to measure the elemental composition profiles of the films and, XPS (X-ray Photoelectron Spectroscopy) were used as a complementary technique to obtain information about the compounds present in the films. The nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4} show crystalline (TiN) and amorphous (Si{sub 3}N{sub 4}) phases which confer a better protection against the corrosion effects compared with that of the AISI 316L.

  19. Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

    Science.gov (United States)

    Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

    2009-02-01

    Ba0.7Sr0.3TiO3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 °C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (˜0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.

  20. Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

    International Nuclear Information System (INIS)

    Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

    2009-01-01

    Ba 0.7 Sr 0.3 TiO 3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (∼0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness

  1. Transport of intense ion beams

    International Nuclear Information System (INIS)

    Lambertson, G.; Laslett, L.J.; Smith, L.

    1977-01-01

    The possibility of using intense bursts of heavy ions to initiate an inertially confined fusion reaction has stimulated interest in the transport of intense unneutralized heavy ion beams by quadrupole or solenoid systems. This problem was examined in some detail, using numerical integration of the coupled envelope equations for the quadrupole case. The general relations which emerge are used to develop examples of high energy transport systems and as a basis for discussing the limitations imposed by a transport system on achievable intensities for initial acceleration

  2. Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

    International Nuclear Information System (INIS)

    Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

    2015-01-01

    Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

  3. Hydrogen Charging Effects in Pd/Ti/TiO2/Ti Thin Films Deposited on Si(111 Studied by Ion Beam Analysis Methods

    Directory of Open Access Journals (Sweden)

    K. Drogowska

    2012-01-01

    Full Text Available Titanium and titanium dioxide thin films were deposited onto Si(111 substrates by magnetron sputtering from a metallic Ti target in a reactive Ar+O2 atmosphere, the composition of which was controlled by precision gas controllers. For some samples, 1/3 of the surface was covered with palladium using molecular beam epitaxy. Chemical composition, density, and layer thickness of the layers were determined by Auger electron spectroscopy (AES and Rutherford backscattering spectrometry (RBS. The surface morphology was studied using high-resolution scanning electron microscopy (HRSEM. After deposition, smooth, homogenous sample surfaces were observed. Hydrogen charging for 5 hours under pressure of 1 bar and at temperature of 300°C results in granulation of the surface. Hydrogen depth profile was determined using secondary ion mass spectrometry (SIMS and nuclear Reaction Analysis (N-15 method, using a 15N beam at and above the resonance energy of 6.417 MeV. NRA measurements proved a higher hydrogen concentration in samples with partially covered top layers, than in samples without palladium. The highest value of H concentration after charging was about 50% (in the palladium-covered part and about 40% in titanium that was not covered by Pd. These values are in good agreement with the results of SIMS measurements.

  4. A quadrupole ion trap as low-energy cluster ion beam source

    CERN Document Server

    Uchida, N; Kanayama, T

    2003-01-01

    Kinetic energy distribution of ion beams was measured by a retarding field energy analyzer for a mass-selective cluster ion beam deposition system that uses a quadrupole ion trap as a cluster ion beam source. The results indicated that the system delivers a cluster-ion beam with energy distribution of approx 2 eV, which corresponded well to the calculation results of the trapping potentials in the ion trap. Using this deposition system, mass-selected hydrogenated Si cluster ions Si sub n H sub x sup + were actually deposited on Si(111)-(7x7) surfaces at impact kinetic energy E sub d of 3-30 eV. Observation by using a scanning tunneling microscope (STM) demonstrated that Si sub 6 H sub x sup + cluster ions landed on the surface without decomposition at E sub d =3 eV, while the deposition was destructive at E sub d>=18 eV. (author)

  5. MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon

    International Nuclear Information System (INIS)

    Kamwanna, T.; Pasaja, N.; Yu, L.D.; Vilaithong, T.; Anders, A.; Singkarat, S.

    2008-01-01

    Amorphous carbon (a-C) films were deposited on Si(1 0 0) wafers by a filtered cathodic vacuum arc (FCVA) plasma source. A negative electrical bias was applied to the silicon substrate in order to control the incident energy of carbon ions. Effects of the electrical bias on the a-C/Si interface characteristics were investigated by using standard Rutherford backscattering spectrometry (RBS) in the channeling mode with 2.1-MeV He 2+ ions. The shape of the Si surface peaks of the RBS/channeling spectra reflects the degree of interface disorder due to atomic displacement from the bulk position of the Si crystal. Details of the analysis method developed are described. It was found that the width of the a-C/Si interface increases linearly with the substrate bias voltage but not the thickness of the a-C film.

  6. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  7. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation

    Science.gov (United States)

    Ristau, Detlev; Gunster, Stefan; Bosch, Salvador; Duparre, Angela; Masetti, Enrico; Ferre-Borrull, Josep; Kiriakidis, George; Peiro, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

    2002-06-01

    Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approx1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nmrms) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

  8. An ASEAN Ion Beam Analysis Center at Chiang Mai University, Thailand

    International Nuclear Information System (INIS)

    Tippawan, U.; Kamwann, T.; Yu, L.D.; Intarasiri, S.; Puttaraksa, N.; Unai, S.; Thongleurm, C.; Singkarat, S.

    2014-01-01

    To contribute to the development of nuclear science and technology in Thailand, a comprehensive ion beam analysis center unique in the ASEAN region has recently been established at Chiang Mai University, Thailand. The center is equipped with a 1.7-MV Tandetron tandem accelerator with an ion beam analysis beam line. The beam line is currently capable of performing ion beam analysis techniques such as Rutherford Backscattering Spectrometry (RBS), RBS/channeling, Elastic BackScattering (EBS), Particle Induced X-ray Emission (PIXE) and Ionoluminescence (IL) with assistance of commercial and in-house-developed softwares. Micro ion beam for MeV-ion mapping using programmable aperture or capillary focusing techniques is being developed. Ion beam analysis experiments and applications have been vigorously developed, especially for novel materials analysis focused on archeological, gemological and biological materials besides other conventional materials.

  9. Low Conductive Thermal Barrier Coatings Produced by Ion Beam Assisted EB-PVD with Controlled Porosity, Microstructure Refinement and Alloying Additions for High Temperature Applications

    Science.gov (United States)

    Wolfe, Douglas E.; Singh, Jogender

    2005-01-01

    Various advanced Hafnia-based thermal barrier coatings (TBC) were applied on nickel-based superalloy coupons by electron beam physical vapor deposition. In addition, microstructural modifications to the coating material were made in an effort to reduce the thermal conductivity of the coating materials. Various processing parameters and coating system modifications were made in order to deposit the alloyed TBC with the desired microstructure and thus coating performance, some of which include applying coatings at substrate temperatures of 1150 C on both PtAl and CoNiCrAlY bond coated samples, as well as using 8YSZ as a bond layer. In addition, various characterization techniques including thermal cyclic tests, scanning electron microscopy, x-ray diffraction, thermal conductivity, and reflectivity measurements were performed. Although the coating microstructure was never fully optimized due to funding being cut short, significant reductions in thermal conductivity were accomplished through both chemistry changes (composition) and microstructural modifications.

  10. Ion assisted deposition of refractory oxide thin film coatings for improved optical and structural properties

    International Nuclear Information System (INIS)

    Sahoo, N.K.; Thakur, S.; Bhattacharyya, D.; Das, N.C.

    1999-03-01

    Ion assisted deposition technique (IAD) has emerged as a powerful tool to control the optical and structural properties of thin film coatings. Keeping in view the complexity of the interaction of ions with the films being deposited, sophisticated ion sources have been developed that cater to the need of modern optical coatings with stringent spectral and environmental specifications. In the present work, the results of ion assisted deposition (IAD) of two commonly used refractory oxides, namely TiO 2 and ZrO 2 , using cold cathode ion source (CC-102R) are presented. Through successive feedback and calibration techniques, various ion beams as well as deposition parameters have been optimized to achieve the best optical and structural film properties in the prevalent deposition geometry of the coating system. It has been possible to eliminate the unwanted optical and structural inhomogeneities from these films using and optimized set of process parameters. Interference modulated spectrophotometric and phase modulated ellipsometric techniques have been very successfully utilized to analyze the optical and structural parameters of the films. Several precision multilayer coatings have been developed and are being used for laser and spectroscopic applications. (author)

  11. Image-projection ion-beam lithography

    International Nuclear Information System (INIS)

    Miller, P.A.

    1989-01-01

    Image-projection ion-beam lithography is an attractive alternative for submicron patterning because it may provide high throughput; it uses demagnification to gain advantages in reticle fabrication, inspection, and lifetime; and it enjoys the precise deposition characteristics of ions which cause essentially no collateral damage. This lithographic option involves extracting low-mass ions (e.g., He + ) from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto a resist-coated wafer. While the advantages of this technology have been demonstrated experimentally by the work of IMS (Austria), many difficulties still impede extension of the technology to the high-volume production of microelectronic devices. We report a computational study of a lithography system designed to address problem areas in field size, telecentricity, and chromatic and geometric aberration. We present a novel ion-column-design approach and conceptual ion-source and column designs which address these issues. We find that image-projection ion-beam technology should in principle meet high-volume-production requirements. The technical success of our present relatively compact-column design requires that a glow-discharge-based ion source (or equivalent cold source) be developed and that moderate further improvement in geometric aberration levels be obtained. Our system requires that image predistortion be employed during reticle fabrication to overcome distortion due to residual image nonlinearity and space-charge forces. This constitutes a software data preparation step, as do correcting for distortions in electron lithography columns and performing proximity-effect corrections. Areas needing further fundamental work are identified

  12. Establishment of an ASEAN Ion Beam Analysis Centre for Material Characterizations at Chiang Mai University

    International Nuclear Information System (INIS)

    Kamwanna, T.; Junphong, P.; Yu, L.D.; Singkarat, S.; Intarasiri, S.; Suwannakachorn, D.

    2015-01-01

    A comprehensive ion beam analysis centre unique in the ASEAN (Association of Southeast Asian Nations) region has been established at Chiang Mai University, Thailand. The centre is equipped with a 1.7 MV Tandetron tandem accelerator and a 300 kV medium energy ion beam accelerator for ion beam analysis. The Tandetron accelerator employs two ion sources, a duoplasmatron ion source and a sputter ion source, capable of producing ion beams of both light species (hydrogen and helium) and heavy species. The beamline is currently able to perform ion beam analysis techniques, such as Rutherford backscattering spectrometry (RBS), RBS/channelling, elastic backscattering (EBS), particle induced x ray emission (PIXE) and ionoluminescence (IL) with the assistance of commercial and self-developed software. The medium energy ion accelerator features an ns pulsed beam so that time of flight (ToF) RBS analysis using medium energy ion beams is available for detailed analysis of materials. Ion beam analysis experiments and applications have been vigorously developed for the real time characterization of various materials. Examples are presented and qualities of the ion beam analysis techniques are discussed. (author)

  13. On- and off-line monitoring of ion beam treatment

    Energy Technology Data Exchange (ETDEWEB)

    Parodi, Katia, E-mail: katia.parodi@lmu.de

    2016-02-11

    Ion beam therapy is an emerging modality for high precision radiation treatment of cancer. In comparison to conventional radiation sources (photons, electrons), ion beams feature major dosimetric advantages due to their finite range with a localized dose deposition maximum, the Bragg peak, which can be selectively adjusted in depth. However, due to several sources of treatment uncertainties, full exploitation of these dosimetric advantages in clinical practice would require the possibility to visualize the stopping position of the ions in vivo, ideally in real-time. To this aim, different imaging methods have been proposed and investigated, either pre-clinically or even clinically, based on the detection of prompt or delayed radiation following nuclear interaction of the beam with the irradiated tissue. However, the chosen or ad-hoc developed instrumentation has often relied on technologies originally conceived for different applications, thus compromising on the achievable performances for the sake of cost-effectiveness. This contribution will review major examples of used instrumentation and related performances, identifying the most promising detector developments for next generation devices especially dedicated to on-line monitoring of ion beam treatment. Moreover, it will propose an original combination of different techniques in a hybrid detection scheme, aiming to make the most of complementary imaging methods and open new perspectives of image guidance for improved precision of ion beam therapy.

  14. Ion beam sputter implantation method

    International Nuclear Information System (INIS)

    King, W.J.

    1978-01-01

    By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO 2 , Al 2 O 3 , Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW) [de

  15. Ion beam modification of polymers

    International Nuclear Information System (INIS)

    Sofield, C.J.; Sugden, S.; Ing, J.; Bridwell, L.B.; Wang, Y.Q.

    1993-01-01

    The implantation of polymers has received considerable attention in recent years, primarily to examine doping of conducting polymers and to increase the surface conductivity (by many orders of magnitude) of highly insulating polymers. The interest in these studies was partly motivated by possible applications to microelectronic device fabrication. More recently it has been observed that ion implantation can under some conditions lead to the formation of a hard (e.g. as hard as steel, ca. 3 MPa) and conducting surface layer. This paper will review the ion beam modification of polymers resulting from ion implantation with reference to fundamental ion-solid interactions. This leads us to examine whether or not implantation of polymers is a contradiction in terms. (Author)

  16. Radiation effects of ion beams on polymers

    International Nuclear Information System (INIS)

    Tagawa, Seiichi

    1993-01-01

    Recent progress in the radiation effects of ion beams on polymers are reviewed briefly. Our recent work on the radiation effects of ion beams on polystyrene thin films on silicon wafers and time resolved emission studies on polymers are described. (orig.)

  17. Ion Beams in Nanoscience and Technology

    CERN Document Server

    Hellborg, Ragnar

    2010-01-01

    Energetic ion beam irradiation is the basis of a wide plethora of powerful research- and fabrication-techniques for materials characterisation and processing on a nanometre scale. This book is suitable for practitioners, researchers and graduate students working in the field of ion beams and application

  18. A simulation study of interface mixing during ion-assisted deposition

    International Nuclear Information System (INIS)

    Wenzhi Li; Fuzhai Cui; Yi Liao; Hengde Li

    1990-01-01

    Ion-beam assisted deposition (IAD) can produce strong film to substrate adhesion. The adhesion depends heavily on atom mixing near the interface. In order to study the dependence of the width of the mixed interface on the experimental parameters, a Monte Carlo study has been made using the dynamic simulation code TCIS-6. The simulation mode and calculational procedure are described. Simulation calculations indicate that the mixing increases with the bombarding energies and a saturation width appears at high energies. There is a strong relationship between the amount of mixing and the ion-to-atom arrival ratio. Some comparisons of the calculations with experimental data in the literature are also presented. (author)

  19. A specialized bioengineering ion beam line

    International Nuclear Information System (INIS)

    Yu, L.D.; Sangyuenyongpipat, S.; Sriprom, C.; Thongleurm, C.; Suwanksum, R.; Tondee, N.; Prakrajang, K.; Vilaithong, T.; Brown, I.G.; Wiedemann, H.

    2007-01-01

    A specialized bioengineering ion beam line has recently been completed at Chiang Mai University to meet rapidly growing needs of research and application development in low-energy ion beam biotechnology. This beam line possesses special features: vertical main beam line, low-energy (30 keV) ion beams, double swerve of the beam, a fast pumped target chamber, and an in-situ atomic force microscope (AFM) system chamber. The whole beam line is situated in a bioclean environment, occupying two stories. The quality of the ion beam has been studied. It has proved that this beam line has significantly contributed to our research work on low-energy ion beam biotechnology

  20. Ion beam techniques for analyzing polymers irradiated by ions

    International Nuclear Information System (INIS)

    Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

    1992-01-01

    In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

  1. Ion beam modification of surfaces for biomedical applications

    International Nuclear Information System (INIS)

    Sommerfeld, Jana

    2014-01-01

    Human life expectancy increased significantly within the last century. Hence, medical care must ever be improved. Optimizing artificial replacements such as hip joints or stents etc. is of special interest. For this purpose, new materials are constantly developed or known ones modified. This work focused on the possibility to change the chemistry and topography of biomedically relevant materials such as diamond-like carbon (DLC) and titanium dioxide (TiO 2 ) by means of ion beam irradiation. Mass-separated ion beam deposition was used in order to synthesize DLC layers with a high sp 3 content (> 70%), a sufficiently smooth surface (RMS<1 nm) and a manageable film thickness (50 nm). The chemistry of the DLC layers was changed by ion beam doping with different ion species (Ag,Ti) and concentrations. Additionally, the surface topography of silicon and titanium dioxide was altered by ion beam irradiation under non-perpendicular angle of incidence. The created periodic wave structures (so-called ripples) were characterized and their dependency on the ion energy was investigated. Moreover, ripples on silicon were covered with a thin DLC layer in order to create DLC ripples. The biocompatibility of all samples was investigated by adsorption experiments. For this purpose, human plasma fibrinogen (HPF) was used due to its ambiphilic character, which allows the protein to assume different conformations on materials with different hydrophilicities. Moreover, HPF is a crucial factor in the blood coagulation process. This work comes to the conclusion that the interaction of both, the surface chemistry and topography, has a strong influence on the adsorption behavior of HPF and thus the biocompatibility of a material. Both factors can be specifically tuned by means of ion beam irradiation.

  2. Formation and reactions of free radicals in the radiolysis of organic materials by ion beams

    International Nuclear Information System (INIS)

    Koizumi, H.

    2000-01-01

    High-energy heavy ions deposit energy along ion tracks with high density. Chemical effects of the heavy ions may hence differ from that of γ-rays and fast electrons. We can utilize these effects for material modification and fabrication of microstructure. It is necessary to know the dependence of the effects on ion beams and the variation of the effects on materials for developing new application of ion beams. We then studied radical formation in organic solids of alanine and of adipic acid by ion beams irradiation. (author)

  3. Ion-assisted deposition of thin films

    International Nuclear Information System (INIS)

    Barnett, S.A.; Choi, C.H.; Kaspi, R.; Millunchick, J.M.

    1993-01-01

    Recent work on low-energy ion-assisted deposition of epitaxial films is reviewed. Much of the recent interest in this area has been centered on the use of very low ion energies (∼ 25 eV) and high fluxes (> 1 ion per deposited atom) obtained using novel ion-assisted deposition techniques. These methods have been applied in ultra-high vacuum, allowing the preparation of high-purity device-quality semiconductor materials. The following ion-surface interaction effects during epitaxy are discussed: improvements in crystalline perfection during low temperature epitaxy, ion damage, improved homogeneity and properties in III-V alloys grown within miscibility gaps, and changes in nucleation mechanism during heteroepitaxial growth

  4. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  5. Materials research with ion beams

    International Nuclear Information System (INIS)

    Meyer, J.D.

    1988-01-01

    This report gives a series of helpful programs which are used in materials research with ion beams. In this context algorithms which can substitute table books are dealt with. This is true for the programs DEDX and PRAL; they are used in order to determine the energy loss of ions in solid bodies, their working range and straggling. Furthermore, simulator routines and analyzers are described. The program TRIM simulates the physical phenomena which occur with the penetration of high-energy ions into solid bodies. In this context electronic excitations, phonons and lattice distortions which are caused by the ions are dealt with. For the experimental ion implantation it is interesting to know the final distribution of the simulated ions in the solid body. The program RBS simulates the Rutherford spectrum of ions which are scattered from a solid body which may consist of up to nine elements and up to one hundred layers. The unknown composition of a solid body can be determined in direct comparison with the experimental spectrum. The program NRA determines concentration and penetrative distribution of an impurity by means of the experimental nuclear reaction spectrum of this impurity. All programs are written in FORTRAN 77. (orig./MM) [de

  6. Towards a magnetic field separation in Ion Beam Sputtering processes

    Energy Technology Data Exchange (ETDEWEB)

    Malobabic, Sina, E-mail: s.malobabic@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Kadhkoda, Puja [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

    2015-10-01

    Defects embedded in coatings due to particle contamination are considered as a primary factor limiting the quality of optical coatings in Ion Beam Sputtering. An approach combining the conventional Ion Beam Sputtering process with a magnetic separator in order to remove these particles from film growth is presented. The separator provides a bent axial magnetic field that guides the material flux towards the substrate positioned at the exit of the separator. Since there is no line of sight between target and substrate, the separator prevents that the particles generated in the target area can reach the substrate. In this context, optical components were manufactured that reveal a particle density three times lower than optical components which were deposited using a conventional Ion Beam Sputtering process. - Highlights: • We use bent magnetic fields to guide and separate the sputtered deposition material. • No line of sight between substrate and target prevents thin films from particles. • The transport efficiency of binary and ternary oxides is investigated. • The defect statistics of manufactured dielectric ternary multilayers are evaluated. • The phase separation leads to a drastically reduction of particle contamination.

  7. Development of ion beam sputtering techniques for actinide target preparation

    International Nuclear Information System (INIS)

    Aaron, W.S.; Zevenbergen, L.A.; Adair, H.L.

    1985-01-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed. (orig.)

  8. Accelerated ion beam research at ATOMKI

    International Nuclear Information System (INIS)

    Kiss, A.Z.

    2009-01-01

    The paper summarizes the studies on accelerated ion beams at ATOMKI and their technical background, their use from chemical analysis to biological, medical, geological, archaeological applications, their advance from material science to micromachining. (TRA)

  9. Ion beam techniques in arts and archaeology

    International Nuclear Information System (INIS)

    Qin Guangyong; Pan Xianjia; Sun Zhongtian; Gao Zhengyao

    1991-01-01

    The ion beam techniques used in studies of arts and archaeology are compared with other analytical techniques. Some examples are specially selected to illustrate the achievements and trends of the techniques in this field

  10. Mutation induction by ion beams in plants

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    2001-03-01

    The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

  11. Mutation induction by ion beams in plants

    International Nuclear Information System (INIS)

    Tanaka, Atsushi

    2001-01-01

    The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

  12. Ion beam sputter coatings for laser technology

    Science.gov (United States)

    Ristau, Detlev; Gross, Tobias

    2005-09-01

    The initial motivation for the development of Ion Beam Sputtering (IBS) processes was the need for optical coatings with extremely low optical scatter losses for laser gyros. Especially, backscattering of the gyro-mirrors couples the directional modes in the ring resonator leading to the lock in effect which limits the sensitivity of the gyro. Accordingly, the first patent on IBS was approved for an aircraft company (Litton) in 1978. In the course of the rapid development of the IBS-concept during the last two decades, an extremely high optical quality could be achieved for laser coatings in the VIS- and NIR-spectral region. For example, high reflecting coatings with total optical losses below 1 ppm were demonstrated for specific precision measurement applications with the Nd:YAG-laser operating at 1.064 μm. Even though the high quality level of IBS-coatings had been confirmed in many applications, the process has not found its way into the production environment of most optical companies. Major restrictions are the relatively low rate of the deposition process and the poor lateral homogeneity of the coatings, which are related to the output characteristics of the currently available ion sources. In the present contribution, the basic principles of IBS will be discussed in the context of the demands of modern laser technology. Besides selected examples for special applications of IBS, aspects will be presented for approaches towards rapid manufacturing of coatings and the production of rugate filters on the basis of IBS-techniques.

  13. Neurosurgical applications of ion beams

    Science.gov (United States)

    Fabrikant, Jacob I.; Levy, Richard P.; Phillips, Mark H.; Frankel, Kenneth A.; Lyman, John T.

    1989-04-01

    The program at Donner Pavilion has applied nuclear medicine research to the diagnosis and radiosurgical treatment of life-threatening intracranial vascular disorders that affect more than half a million Americans. Stereotactic heavy-charged-particle Bragg peak radiosurgery, using narrow beams of heavy ions, demonstrates superior biological and physical characteristics in brain over X-and γ-rays, viz., improved dose distribution in the Bragg peak and sharp lateral and distal borders and less scattering of the beam. Examination of CNS tissue response and alteration of cerebral blood-flow dynamics related to heavy-ion Bragg peak radiosurgery is carried out using three-dimensional treatment planning and quantitative imaging utilizing cerebral angiography, computerized tomography (CT), magnetic resonance imaging (MRI), cine-CT, xenon X-ray CT and positron emission tomography (PET). Also under examination are the physical properties of narrow heavy-ion beams for improving methods of dose delivery and dose distribution and for establishing clinical RBE/LET and dose-response relationships for human CNS tissues. Based on the evaluation and treatment with stereotactically directed narrow beams of heavy charged particles of over 300 patients, with cerebral angiography, CT scanning and MRI and PET scanning of selected patients, plus extensive clinical and neuroradiological followup, it appears that Stereotactic charged-particle Bragg peak radiosurgery obliterates intracranial arteriovenous malformations or protects against rebleeding with reduced morbidity and no mortality. Discussion will include the method of evaluation, the clinical research protocol, the Stereotactic neuroradiological preparation, treatment planning, the radiosurgery procedure and the protocol for followup. Emphasis will be placed on the neurological results, including the neuroradiological and clinical response and early and late delayed injury in brain leading to complications (including vasogenic edema

  14. Ion beam processing of advanced electronic materials

    International Nuclear Information System (INIS)

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B.

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases

  15. Construction of ion beam pulse radiolysis system

    Energy Technology Data Exchange (ETDEWEB)

    Chitose, Norihisa; Katsumura, Yosuke; Domae, Masafumi; Ishigure, Kenkichi; Murakami, Takeshi [Tokyo Univ. (Japan)

    1996-10-01

    An ion beam pulse radiolysis system has been constructed at HIMAC facility. Ion beam of 24 MeV He{sup 2+} with the duration longer than 1 {mu}s is available for irradiation. Three kinds of aqueous solutions, (C{sub 6}H{sub 5}){sub 2}CO, NaHCO{sub 3} and KSCN, were irradiated and the absorption signals were observed. (author)

  16. Revised data taking schedule with ion beams

    CERN Document Server

    Gazdzicki, Marek; Aduszkiewicz, A; Andrieu, B; Anticic, T; Antoniou, N; Argyriades, J; Asryan, A G; Baatar, B; Blondel, A; Blumer, J; Boldizsar, L; Bravar, A; Brzychczyk, J; Bubak, A; Bunyatov, S A; Choi, K U; Christakoglou, P; Chung, P; Cleymans, J; Derkach, D A; Diakonos, F; Dominik, W; Dumarchez, J; Engel, R; Ereditato, A; Feofilov, G A; Fodor, Z; Ferrero, A; Gazdzicki, M; Golubeva, M; Grebieszkow, K; Grzeszczuk, A; Guber, F; Hasegawa, T; Haungs, A; Igolkin, S; Ivanov, A S; Ivashkin, A; Kadija, K; Katrynska, N; Kielczewska, D; Kikola, D; Kisiel, J; Kobayashi, T; Kolesnikov, V I; Kolev, D; Kolevatov, R S; Kondratiev, V P; Kowalski, S; Kurepin, A; Lacey, R; Laszlo, A; Lyubushkin, V V; Majka, Z; I Malakhov, A; Marchionni, A; Marcinek, A; Maris, I; Matveev, V; Melkumov, G L; Meregaglia, A; Messina, M; Mijakowski, P; Mitrovski, M; Montaruli, T; Mrówczynski, St; Murphy, S; Nakadaira, T; Naumenko, P A; Nikolic, V; Nishikawa, K; Palczewski, T; Pálla, G; Panagiotou, A D; Peryt, W; Planeta, R; Pluta, J; Popov, B A; Posiadala, M; Przewlocki, P; Rauch, W; Ravonel, M; Renfordt, R; Röhrich, D; Rondio, E; Rossi, B; Roth, M; Rubbia, A; Rybczynski, M; Sadovskii, A; Sakashita, K; Schuster, T; Sekiguchi, T; Seyboth, P; Shibata, M; Sissakian, A N; Skrzypczak, E; Slodkowski, M; Sorin, A S; Staszel, P; Stefanek, G; Stepaniak, J; Strabel, C; Ströbele, H; Susa, T; Szentpétery, I; Szuba, M; Tada, M; Taranenko, A; Tsenov, R; Ulrich, R; Unger, M; Vassiliou, M; Vechernin, V V; Vesztergombi, G; Wlodarczyk, Z; Wojtaszek, A; Zipper, W; CERN. Geneva. SPS and PS Experiments Committee; SPSC

    2009-01-01

    This document presents the revised data taking schedule of NA61 with ion beams. The revision takes into account limitations due to the new LHC schedule as well as final results concerning the physics performance with secondary ion beams. It is proposed to take data with primary Ar and Xe beams in 2012 and 2014, respectively, and to test and use for physics a secondary B beam from primary Pb beam fragmentation in 2010, 2011 and 2013.

  17. Construction, characterization and applications of a compact mass-resolved low-energy ion beam system

    International Nuclear Information System (INIS)

    Lau, W.M.; Feng, X.; Bello, I.; Sant, S.; Foo, K.K.; Lawson, R.P.W.

    1991-01-01

    A compact mass-resolved low-energy ion beam system has been constructed in which ions are extracted from a Colutron ion source, focused by an einzel lens, mass-selected by a Wien filter, refocused by a second einzel lens into an ultrahigh vacuum target chamber, and finally decelerated with a five-electrode lens. The design of the deceleration lens was assisted by computer simulation including space-charge effects with an ion trajectory software (CHDEN). The system performance has been characterized with a quadrupole mass spectrometer and an energy analyzer along the beam axis. For example, argon ions can be transported at keV and decelerated to 10 eV with an energy spread of ±0.5 eV. The total current measured by a Faraday cage at the exit of the deceleration lens in the energy range of 10-200 eV is about 1-5 μA. The ion current density was higher than 100 μA/cm 2 at 50 eV but decreased to 10-20 μA/cm 2 at 10 eV. The mass resolution was estimated to be 40 under the present operation configuration. The system has been used to produce interesting results in both ion beam etching and deposition. (orig.)

  18. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

  19. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

    2013-01-01

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

  20. Ion-beam plasma and propagation of intense compensated ion beams

    International Nuclear Information System (INIS)

    Gabovich, M.D.

    1977-01-01

    Discussed are the results of investigation of plasma properties recieved by neutralization of intensive ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown, that not only dinamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account at solving the problem of obtaining ''superdense'' compensated beams

  1. Ion-beam plasma and propagation of intense compensated ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Gabovich, M D [AN Ukrainskoj SSR, Kiev. Inst. Fiziki

    1977-02-01

    Discussed are the results of investigation of plasma properties received by neutralization of intense ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown that not only dynamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account in solving the problem of obtaining ''superdense'' compensated beams.

  2. Superconducting oxide thin films by ion beam sputtering

    International Nuclear Information System (INIS)

    Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

    1987-01-01

    Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

  3. Ion beam figuring of CVD silicon carbide mirrors

    Science.gov (United States)

    Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

    2017-11-01

    Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

  4. Multiple-ion-beam time-of-flight mass spectrometer

    International Nuclear Information System (INIS)

    Rohrbacher, Andreas; Continetti, Robert E.

    2001-01-01

    An innovative approach to increase the throughput of mass spectrometric analyses using a multiple-ion-beam mass spectrometer is described. Two sample spots were applied onto a laser desorption/ionization target and each spot was simultaneously irradiated by a beam of quadrupled Nd:YLF laser radiation (261.75 nm) to produce ions by laser-desorption ionization. Acceleration of the ions in an electric field created parallel ion beams that were focused by two parallel einzel lens systems. After a flight path of 2.34 m, the ions were detected with a microchannel plate-phosphor screen assembly coupled with a charge coupled device camera that showed two resolved ion beams. Time-of-flight mass spectra were also obtained with this detector. Experiments were performed using both metal atom cations (Ti + and Cr + ) produced by laser desorption/ionization and the molecular ions of two different proteins (myoglobin and lysozyme), created by matrix assisted laser desorption/ionization using an excess of nicotinic acid as matrix

  5. Intense non-relativistic cesium ion beam

    International Nuclear Information System (INIS)

    Lampel, M.C.

    1984-02-01

    The Heavy Ion Fusion group at Lawrence Berkeley Laboratory has constructed the One Ampere Cesium Injector as a proof of principle source to supply an induction linac with a high charge density and high brightness ion beam. This is studied here. An electron beam probe was developed as the major diagnostic tool for characterizing ion beam space charge. Electron beam probe data inversion is accomplished with the EBEAM code and a parametrically adjusted model radial charge distribution. The longitudinal charge distribution was not derived, although it is possible to do so. The radial charge distribution that is derived reveals an unexpected halo of trapped electrons surrounding the ion beam. A charge fluid theory of the effect of finite electron temperature on the focusing of neutralized ion beams (Nucl. Fus. 21, 529 (1981)) is applied to the problem of the Cesium beam final focus at the end of the injector. It is shown that the theory's predictions and assumptions are consistent with the experimental data, and that it accounts for the observed ion beam radius of approx. 5 cm, and the electron halo, including the determination of an electron Debye length of approx. 10 cm

  6. Realization of a scanning ion beam monitor

    International Nuclear Information System (INIS)

    Pautard, C.

    2008-07-01

    During this thesis, a scanning ion beam monitor has been developed in order to measure on-line fluence spatial distributions. This monitor is composed of an ionization chamber, Hall Effect sensors and a scintillator. The ionization chamber set between the beam exit and the experiment measures the ion rate. The beam spot is localized thanks to the Hall Effect sensors set near the beam sweeping magnets. The scintillator is used with a photomultiplier tube to calibrate the ionization chamber and with an imaging device to calibrate the Hall Effect sensors. This monitor was developed to control the beam lines of a radiobiology dedicated experimentation room at GANIL. These experiments are held in the context of the research in hadron-therapy. As a matter of fact, this new cancer treatment technique is based on ion irradiations and therefore demands accurate knowledge about the relation between the dose deposit in biological samples and the induced effects. To be effective, these studies require an on-line control of the fluence. The monitor has been tested with different beams at GANIL. Fluence can be measured with a relative precision of ±4% for a dose rate ranging between 1 mGy/s and 2 Gy/s. Once permanently set on the beam lines dedicated to radiobiology at GANIL, this monitor will enable users to control the fluence spatial distribution for each irradiation. The scintillator and the imaging device are also used to control the position, the spot shape and the energy of different beams such as those used for hadron-therapy. (author)

  7. Adaptation of the perfect linear model for ion beam formation to the case of plasma sources with electron electrostatic containment

    International Nuclear Information System (INIS)

    Coste, Ph.; Aubert, J.; Lejeune, C.

    1991-01-01

    The extensive development of ion beam technologies in the last years, in particular for thin film deposition and etching, poses the problem of predicting the behaviour of the ion beam from convenient models. One of the existing models, the 'perfect linear model', is easy to use and provides information about the geometrical parameters of the ion beam envelope. In this model, however, the plasma potential must be close to the plasma electrode potential. Now, ion sources with electrostatic containment of the ionizing electrons -very attractive because of their improved ionization efficiency - have a plasma potential higher than the plasma electrode potential. Thus, a space-charge sheath with a non-negligible thickness exists, which modifies the equilibrium conditions of the plasma meniscus and, therefore, the initial divergence of the ion beam. In this paper an adaptation of the perfect linear model for ion beam formation to the case of plasma sources with electron electrostatic containment is presented. (author)

  8. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-05-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

  9. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

    2014-01-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

  10. Applications of focused ion beams in microelectronics

    International Nuclear Information System (INIS)

    Broughton, C.; Beale, M.I.J.; Deshmukh, V.G.I.

    1986-04-01

    We present the conclusions of the RSRE programme on the application of focused ion beams in microelectronics and review the literature published in this field. We discuss the design and performance of focused beam implanters and the viability of their application to semiconductor device fabrication. Applications in the areas of lithography, direct implantation and micromachining are discussed in detail. Comparisons are made between the use of focused ion beams and existing techniques for these fabrication processes with a strong emphasis placed on the relative throughputs. We present results on a novel spot size measurement technique and the effect of beam heating on resist. We also present the results of studies into implantation passivation of resist to oxygen plasma attack as basis for a dry development lithography scheme. A novel lithography system employing flood electron exposure from a photocathode which is patterned by a focused ion beam which can also be used to repair mask defects is considered. (author)

  11. Ion beam heating of thin silicon membranes

    International Nuclear Information System (INIS)

    Tissot, P.E.; Hart, R.R.

    1993-01-01

    For silicon membranes irradiated by an ion beam in a vacuum environment, such as the masks used for ion beam lithography and the membranes used for thin film self-annealing, the heat transfer modes are radiation and limited conduction through the thin membrane. The radiation component depends on the total hemispherical emissivity which varies with the thickness and temperature of the membrane. A semiempirical correlation for the absorption coefficient of high resistivity silicon was derived and the variation of the total emissivity with temperature was computed for membranes with thicknesses between 0.1 and 10 μm. Based on this result, the temperatures reached during exposure to ion beams of varying intensities were computed. A proper modeling of the emissivity is shown to be important for beam heating of thin silicon membranes. (orig.)

  12. Intense pulsed ion beams for fusion applications

    International Nuclear Information System (INIS)

    Humphries, S. Jr.

    1980-04-01

    The subject of this review paper is the field of intense pulsed ion beam generation and the potential application of the beams to fusion research. Considerable progress has been made over the past six years. The ion injectors discussed utilize the introduction of electrons into vacuum acceleration gaps in conjunction with high voltage pulsed power technology to achieve high output current. Power levels from injectors exceeding 1000 MW/cm 2 have been obtained for pulse lengths on the order of 10 -7 sec. The first part of the paper treats the physics and technology of intense ion beams. The second part is devoted to applications of intense ion beams in fusion research. A number of potential uses in magnetic confinement systems have been proposed

  13. Variable-spot ion beam figuring

    International Nuclear Information System (INIS)

    Wu, Lixiang; Qiu, Keqiang; Fu, Shaojun

    2016-01-01

    This paper introduces a new scheme of ion beam figuring (IBF), or rather variable-spot IBF, which is conducted at a constant scanning velocity with variable-spot ion beam collimated by a variable diaphragm. It aims at improving the reachability and adaptation of the figuring process within the limits of machine dynamics by varying the ion beam spot size instead of the scanning velocity. In contrast to the dwell time algorithm in the conventional IBF, the variable-spot IBF adopts a new algorithm, which consists of the scan path programming and the trajectory optimization using pattern search. In this algorithm, instead of the dwell time, a new concept, integral etching time, is proposed to interpret the process of variable-spot IBF. We conducted simulations to verify its feasibility and practicality. The simulation results indicate the variable-spot IBF is a promising alternative to the conventional approach.

  14. Pseudo ribbon metal ion beam source

    International Nuclear Information System (INIS)

    Stepanov, Igor B.; Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

    2014-01-01

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface

  15. Pseudo ribbon metal ion beam source.

    Science.gov (United States)

    Stepanov, Igor B; Ryabchikov, Alexander I; Sivin, Denis O; Verigin, Dan A

    2014-02-01

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

  16. Mutation induction by ion beams in arabidopsis

    International Nuclear Information System (INIS)

    Tanaka, Atsushi

    1999-01-01

    An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M 1 lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by γirradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and γ-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

  17. Mutation induction by ion beams in arabidopsis

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1999-07-01

    An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M{sub 1} lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by {gamma}irradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and {gamma}-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

  18. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

    2004-01-01

    Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

  19. Ion beam pulse radiolysis system at HIMAC

    Energy Technology Data Exchange (ETDEWEB)

    Chitose, N; Katsumura, Y; Domae, M; Ishigure, K [Tokyo Univ. (Japan); Murakami, T

    1997-03-01

    An ion beam pulse radiolysis system has been constructed at HIMAC facility. Ion beam of 24MeV He{sup 2+} with the duration longer than 1 {mu}s is available for irradiation. Three kinds of aqueous solutions, (C{sub 6}H{sub 5}){sub 2}CO, NaHCO{sub 3}, and KSCN, were irradiated and the absorption signals corresponding to (C{sub 6}H{sub 5}){sub 2}CO{sup -}, CO{sub 3}{sup -}, and (SCN){sub 2}{sup -} respectively were observed. Ghost signals which interfere with the measurement are also discussed. (author)

  20. Experimental studies with radioactive ion beams

    International Nuclear Information System (INIS)

    Sastry, D.L.; Sree Krishna Murty, G.; Chandrasekhar Rao, M.V.S.

    1991-01-01

    The sources of information presented are essentially taken from the papers reported at several international seminars and those appeared in the Journal of Nuclear Instruments and Methods in Physics Research. Production and usage of radioactive ion beams (RIB) in research have received the attention of scientists all over the world during the past six years. The first radioactive ion beams ( 19 Ne) were produced at Bevalac for the purpose of medical research using a primary beam of energy 800 MeV/a.m.u. (author). 19 refs., 2 figs., 3 tabs

  1. The role of space charge compensation for ion beam extraction and ion beam transport (invited)

    International Nuclear Information System (INIS)

    Spädtke, Peter

    2014-01-01

    Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation

  2. Surface modification of M50 steel by dual-ion-beam dynamic mixing

    International Nuclear Information System (INIS)

    Kuang Yuanzhu; Jan Jun; Qin Ouyang

    1994-01-01

    TaN films have many attractive characteristics, and so have been used for electronic and mechanical applications. There are many methods used for deposition of TaN films. Recently, the ion-beam dynamic mixing method has been used for thin film deposition and materials modification. In order to obtain high performance, stoichiometric composition and good adhesion we have deposited TaN films by a dual-ion-beam dynamic mixing method. This paper introduces the deposition and properties of TaN films on M50 steel by dual-ion-beam dynamic mixing. The microstructure of films was analysed by X-ray diffraction and Auger electron spectroscopy (AES). The microhardness, resistance to wear and erosion of these films were determined. The results showed that (1) the TaN films were successfully deposited on M50 steel by this method, (2) the performance, resistance to wear and erosion of M50 steel were improved by ion-beam-mixing deposition of the TaN thin films, (3) AES showed there was a mixed layer on the film interface, (4) the microhardness of the thin film depends on microstructure and thickness and (5) the microstructure and quality of the films depends on the deposition conditions, so it is important to select the proper operational parameters of ion sources. ((orig.))

  3. Functional oxide thin films by pulsed-laser deposition: ion beam nanostructuring of epitaxial YBa2Cu3O7-d and growth of conductive transparent Zn1-xAlxO on compliant substrates

    International Nuclear Information System (INIS)

    Dosmailov, M.

    2015-01-01

    This doctoral dissertation is composed of two parts. The first part of the work is dedicated to the modification of YBCO film by Masked Ion Beam Structuring (MIBS) and the commensurability effects between flux line lattice and defect lattice caused by ion irradiation. The motivation of this part of the work is to understand better the physics of the vortex matter. The YBCO film was grown on MgO substrate by Pulsed Laser Deposition (PLD) method. PLD is a thin film deposition method where high power pulsed laser beam is employed to ablate the material on the target and to deposit thin film on the substrate. This process occurs in high vacuum or in gas background. The main advantage of MIBS is the direct, non-contact structuring of superconducting devices with a resolution mainly limited by masking technique. MIBS is a parallel process that can be used for patterning large sample areas. It avoids surface degradation. The resolution of the MIBS technique can be 10 nm for a 100 nm thick YBCO film irradiated with 75 keV He+. The YBCO film modified by ion irradiation has higher resistivity by factor of ⁓ 3 at temperature T =290K, and much reduced critical temperature Tc ⁓ 47K and broadened transition [Delta]Tc ⁓ 8K. The YBCO film was irradiated with 75keV He+. The square array of nanodots with diameter 175 nm and lattice constant 300 nm was produced using a Si stencil mask. The nanodots are serving as pinning centers for vortices that arise in the superconducting materials of type II in the presence of the magnetic field. The commensurability effects manifest themselves in pronounced minimum of magnetoresistance and pronounced maximum of the critical current at the matching fields. The entire Jc(B) is described by tentative model. Moreover, a strong hysteresis of magnetoresistance and the critical current density Jc(B) is observed (Cooperation with Prof. Wolfgang Lang, University of Vienna). It is interesting to further investigate the physics of vortex matter. The

  4. Imaging and characterization of primary and secondary radiation in ion beam therapy

    Energy Technology Data Exchange (ETDEWEB)

    Granja, Carlos, E-mail: carlos.granja@utef.cvut.cz; Opalka, Lukas [Institute of Experimental and Applied Physics, Czech Technical University in Prague (Czech Republic); Martisikova, Maria; Gwosch, Klaus [German Cancer Research Center, Heidelberg (Germany); Jakubek, Jan [Advacam, Prague (Czech Republic)

    2016-07-07

    Imaging in ion beam therapy is an essential and increasingly significant tool for treatment planning and radiation and dose deposition verification. Efforts aim at providing precise radiation field characterization and online monitoring of radiation dose distribution. A review is given of the research and methodology of quantum-imaging, composition, spectral and directional characterization of the mixed-radiation fields in proton and light ion beam therapy developed by the IEAP CTU Prague and HIT Heidelberg group. Results include non-invasive imaging of dose deposition and primary beam online monitoring.

  5. Imaging and characterization of primary and secondary radiation in ion beam therapy

    International Nuclear Information System (INIS)

    Granja, Carlos; Opalka, Lukas; Martisikova, Maria; Gwosch, Klaus; Jakubek, Jan

    2016-01-01

    Imaging in ion beam therapy is an essential and increasingly significant tool for treatment planning and radiation and dose deposition verification. Efforts aim at providing precise radiation field characterization and online monitoring of radiation dose distribution. A review is given of the research and methodology of quantum-imaging, composition, spectral and directional characterization of the mixed-radiation fields in proton and light ion beam therapy developed by the IEAP CTU Prague and HIT Heidelberg group. Results include non-invasive imaging of dose deposition and primary beam online monitoring.

  6. Arc-based smoothing of ion beam intensity on targets

    International Nuclear Information System (INIS)

    Friedman, Alex

    2012-01-01

    By manipulating a set of ion beams upstream of a target, it is possible to arrange for a smoother deposition pattern, so as to achieve more uniform illumination of the target. A uniform energy deposition pattern is important for applications including ion-beam-driven high energy density physics and heavy-ion beam-driven inertial fusion energy (“heavy-ion fusion”). Here, we consider an approach to such smoothing that is based on rapidly “wobbling” each of the beams back and forth along a short arc-shaped path, via oscillating fields applied upstream of the final pulse compression. In this technique, uniformity is achieved in the time-averaged sense; this is sufficient provided the beam oscillation timescale is short relative to the hydrodynamic timescale of the target implosion. This work builds on two earlier concepts: elliptical beams applied to a distributed-radiator target [D. A. Callahan and M. Tabak, Phys. Plasmas 7, 2083 (2000)] and beams that are wobbled so as to trace a number of full rotations around a circular or elliptical path [R. C. Arnold et al., Nucl. Instrum. Methods 199, 557 (1982)]. Here, we describe the arc-based smoothing approach and compare it to results obtainable using an elliptical-beam prescription. In particular, we assess the potential of these approaches for minimization of azimuthal asymmetry, for the case of a ring of beams arranged on a cone. It is found that, for small numbers of beams on the ring, the arc-based smoothing approach offers superior uniformity. In contrast with the full-rotation approach, arc-based smoothing remains usable when the geometry precludes wobbling the beams around a full circle, e.g., for the X-target [E. Henestroza, B. G. Logan, and L. J. Perkins, Phys. Plasmas 18, 032702 (2011)] and some classes of distributed-radiator targets.

  7. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  8. Ion Beam Extraction by Discrete Ion Focusing

    DEFF Research Database (Denmark)

    2010-01-01

    An apparatus (900) and methods are disclosed for ion beam extraction. In an implementation, the apparatus includes a plasma source (or plasma) (802) and an ion extractor (804). The plasma source is adapted to generate ions and the ion extractor is immersed in the plasma source to extract a fracti...

  9. Temperature-dependent ion beam mixing

    International Nuclear Information System (INIS)

    Rehn, L.E.; Alexander, D.E.

    1993-08-01

    Recent work on enhanced interdiffusion rates during ion-beam mixing at elevated temperatures is reviewed. As discussed previously, expected increase in ion-beam mixing rates due to 'radiation-enhanced diffusion' (RED), i.e. the free migration of isolated vacancy and interstitial defects, is well documented in single-crystal specimens in the range of 0.4 to 0.6 of absolute melting temperature. In contrast, the increase often observed at somewhat lower temperatures during ion-beam mixing of polycrystalline specimens is not well understood. However, sufficient evidence is available to show that this increase reflects intracascade enhancement of a thermally-activated process that also occurs without irradiation. Recent evidence is presented which suggests that this process is Diffusion-induced Grain-Boundary Migration (DIGM). An important complementary conclusion is that because ion-beam mixing in single-crystal specimens exhibits no significant temperature dependence below that of RED, models that invoke only irradiation-specific phenomena, e.g., cascade-overlap, thermal-spikes, or liquid-diffusion, and hence which predict no difference in mixing behavior between single- or poly-crystalline specimens, cannot account for the existing results

  10. National Centre for Radioactive Ion Beams (NCRIB)

    International Nuclear Information System (INIS)

    Chintalapudi, S.N.

    1999-01-01

    A dedicated National Centre for RIB (NCRIB) proposed discussed at several forums is presented. The production of (RIB) radioactive ion beams and applications of beams leading to competitive studies in nuclear structure, nuclear reactions, condensed matter, bio-science and radioactive isotope production etc. are mentioned

  11. Treatment Planning for Ion Beam Therapy

    Science.gov (United States)

    Jäkel, Oliver

    The special aspects of treatment planning for ion beams are outlined in this chapter, starting with positioning and immobilization of the patient, describing imaging and segmentation, definition of treatment parameters, dose calculation and optimization, and, finally, plan assessment, verification, and quality assurance.

  12. Depth profile analysis of thin TiOxNy films using standard ion beam analysis techniques and HERDA

    International Nuclear Information System (INIS)

    Markwitz, A.; Dytlewski, N.; Cohen, D.

    1999-01-01

    Ion beam assisted deposition is used to fabricate thin titanium oxynitride films (TiO x N y ) at Industrial Research (typical film thickness 100nm). At the Institute of Geological and Nuclear Sciences, the thin films are analysed using non-destructive standard ion beam analysis (IBA) techniques. High-resolution titanium depth profiles are measured with RBS using 1.5MeV 4 He + ions. Non-resonant nuclear reaction analysis (NRA) is performed for investigating the amounts of O and N in the deposited films using the reactions 16 O(d,p) 17 O at 920 keV and 14 N(d,α) 12 C at 1.4 MeV. Using a combination of these nuclear techniques, the stoichiometry as well as the thickness of the layers is revealed. However, when oxygen and nitrogen depth profiles are required for investigating stoichiometric changes in the films, additional nuclear analysis techniques such as heavy ion elastic recoil detection (HERDA) have to be applied. With HERDA, depth profiles of N, O, and Ti are measured simultaneously. In this paper comparative IBA measurement s of TiO x N y films with different compositions are presented and discussed

  13. Fullerene genesis by ion beams

    International Nuclear Information System (INIS)

    Gamaly, E.G.; Chadderton, L.T.; Commonwealth Scientific and Industrial Research Organization, Lindfield, NSW

    1995-01-01

    Clearly detectable quantities of molecular fullerene (C 60 ), the most recently discovered allotrope of carbon, have been observed in graphite following irradiation with heavy projectile ions at energies of about 1 GeV using high pressure chromatography. Similar experiments using lower ion energies gave no corresponding signal, indicating an absence of fullerene. This clear difference suggests that there exists an energy threshold for fullerene genesis. Beginning with a microscopic description of deposition and transfer of energy from the ion to the target, a theoretical model is developed for interpretation of these and similar experiments. An important consequence is a description of the formation of large carbon clusters in the hot dense 'primeval soup' of single carbon atoms by means of random 'sticky' collisions. The ion energy threshold is seen as arising, physically, from a balance in the competition between the rate of primary energy deposition and the rate of system cooling. Rate equations for the basic clustering process allow calculations of the time-dependent number densities for the different carbon clusters produced. An important consequence of the theory is that it is established that the region for the specific phase transition from graphite to fullerene lies in the same pressure regime on the phase diagram as does the corresponding transition for graphite to diamond. (author)

  14. Ion beam collimating grid to reduce added defects

    Science.gov (United States)

    Lindquist, Walter B.; Kearney, Patrick A.

    2003-01-01

    A collimating grid for an ion source located after the exit grid. The collimating grid collimates the ion beamlets and disallows beam spread and limits the beam divergence during transients and steady state operation. The additional exit or collimating grid prevents beam divergence during turn-on and turn-off and prevents ions from hitting the periphery of the target where there is re-deposited material or from missing the target and hitting the wall of the vessel where there is deposited material, thereby preventing defects from being deposited on a substrate to be coated. Thus, the addition of a collimating grid to an ion source ensures that the ion beam will hit and be confined to a specific target area.

  15. Intense pulsed heavy ion beam technology

    International Nuclear Information System (INIS)

    Masugata, Katsumi; Ito, Hiroaki

    2010-01-01

    Development of intense pulsed heavy ion beam accelerator technology is described for the application of materials processing. Gas puff plasma gun and vacuum arc discharge plasma gun were developed as an active ion source for magnetically insulated pulsed ion diode. Source plasma of nitrogen and aluminum were successfully produced with the gas puff plasma gun and the vacuum arc plasma gun, respectively. The ion diode was successfully operated with gas puff plasma gun at diode voltage 190 kV, diode current 2.2 kA and nitrogen ion beam of ion current density 27 A/cm 2 was obtained. The ion composition was evaluated by a Thomson parabola spectrometer and the purity of the nitrogen ion beam was estimated to be 86%. The diode also operated with aluminum ion source of vacuum arc plasma gun. The ion diode was operated at 200 kV, 12 kA, and aluminum ion beam of current density 230 A/cm 2 was obtained. The beam consists of aluminum ions (Al (1-3)+ ) of energy 60-400 keV, and protons (90-130 keV), and the purity was estimated to be 89%. The development of the bipolar pulse accelerator (BPA) was reported. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. The generator was tested with dummy load of 7.5 ohm, bipolar pulses of -138 kV, 72 ns (1st pulse) and +130 kV, 70 ns (2nd pulse) were successively generated. By applying the bipolar pulse to the drift tube of the BPA, nitrogen ion beam of 2 A/cm 2 was observed in the cathode, which suggests the bipolar pulse acceleration. (author)

  16. Negative ion beam extraction in ROBIN

    International Nuclear Information System (INIS)

    Bansal, Gourab; Gahlaut, Agrajit; Soni, Jignesh; Pandya, Kaushal; Parmar, Kanu G.; Pandey, Ravi; Vuppugalla, Mahesh; Prajapati, Bhavesh; Patel, Amee; Mistery, Hiren; Chakraborty, Arun; Bandyopadhyay, Mainak; Singh, Mahendrajit J.; Phukan, Arindam; Yadav, Ratnakar K.; Parmar, Deepak

    2013-01-01

    Highlights: ► A RF based negative hydrogen ion beam test bed has been set up at IPR, India. ► Ion source has been successfully commissioned and three campaigns of plasma production have been carried out. ► Extraction system (35 kV) has been installed and commissioning has been initiated. Negative ion beam extraction is immediate milestone. -- Abstract: The RF based single driver −ve ion source experiment test bed ROBIN (Replica Of BATMAN like source in INDIA) has been set up at Institute for Plasma Research (IPR), India in a technical collaboration with IPP, Garching, Germany. A hydrogen plasma of density 5 × 10 12 cm −3 is expected in driver region of ROBIN by launching 100 kW RF power into the driver by 1 MHz RF generator. The cesiated source is expected to deliver a hydrogen negative ion beam of 10 A at 35 kV with a current density of 35 mA/cm 2 as observed in BATMAN. In first phase operation of the ROBIN ion source, a hydrogen plasma has been successfully generated (without extraction system) by coupling 80 kW RF input power through a matching network with high power factor (cos θ > 0.8) and different plasma parameters have been measured using Langmuir probes and emission spectroscopy. The plasma density of 2.5 × 10 11 cm −3 has been measured in the extraction region of ROBIN. For negative hydrogen ion beam extraction in second phase operation, extraction system has been assembled and installed with ion source on the vacuum vessel. The source shall be first operated in volume mode for negative ion beam extraction. The commissioning of the source with high voltage power supply has been initiated

  17. Research and development of advanced materials using ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Namba, Susumu [Nagasaki Inst. of Applied Science, Nagasaki (Japan)

    1997-03-01

    A wide range of research and development activities of advanced material synthesis using ion beams will be discussed, including ion beam applications to the state-of-the-art electronics from giant to nano electronics. (author)

  18. Monte Carlo simulations of secondary electron emission due to ion beam milling

    Energy Technology Data Exchange (ETDEWEB)

    Mahady, Kyle [Univ. of Tennessee, Knoxville, TN (United States); Tan, Shida [Intel Corp., Santa Clara, CA (United States); Greenzweig, Yuval [Intel Israel Ltd., Haifa (Israel); Livengood, Richard [Intel Corp., Santa Clara, CA (United States); Raveh, Amir [Intel Israel Ltd., Haifa (Israel); Fowlkes, Jason D. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Rack, Philip [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-07-01

    We present a Monte Carlo simulation study of secondary electron emission resulting from focused ion beam milling of a copper target. The basis of this study is a simulation code which simulates ion induced excitation and emission of secondary electrons, in addition to simulating focused ion beam sputtering and milling. This combination of features permits the simulation of the interaction between secondary electron emission, and the evolving target geometry as the ion beam sputters material. Previous ion induced SE Monte Carlo simulation methods have been restricted to predefined target geometries, while the dynamic target in the presented simulations makes this study relevant to image formation in ion microscopy, and chemically assisted ion beam etching, where the relationship between sputtering, and its effects on secondary electron emission, is important. We focus on a copper target, and validate our simulation against experimental data for a range of: noble gas ions, ion energies, ion/substrate angles and the energy distribution of the secondary electrons. We then provide a detailed account of the emission of secondary electrons resulting from ion beam milling; we quantify both the evolution of the yield as high aspect ratio valleys are milled, as well as the emission of electrons within these valleys that do not escape the target, but which are important to the secondary electron contribution to chemically assisted ion induced etching.

  19. Surrey Ion Beam Centre: the EPSRC MRF for ion beam applications - 01002

    International Nuclear Information System (INIS)

    Webb, R.P.

    2016-01-01

    The SIBC (Surrey Ion Beam Centre) is an element of the Virtual Ion Beam Centre that coordinates 3 U.K. experimental facilities: SIBC (University of Surrey) for implantation and ion beam applications, Miami and MEIS facility (University of Huddersfield) and gamma ray and neutron irradiation emulation facility (University of Manchester). The SIBC works actively with industry, developing bespoke processes and services, particularly for the photonics industry and provides ion beam facilities to about 20 companies across the world. It operates a stringent quality control program and is one of the few ion beam laboratories in the world to operate under ISO 9001 certification. The equipment of SIBC is presented and some applications of ion beam analysis concerning the identification of gunshot residues, the determination of the origin of a painting, the analysis of proteins are described. Different techniques such as PIXE (Particle Induced X-ray Emission), RBS (Rutherford Backscattering Spectroscopy), NRA (Nuclear Reaction Analysis), SIMS (Secondary Ion Mass Spectrometry) are also explained in the slides of the presentation that have been added at the end of the paper

  20. The application of ion beams to corrosion science

    International Nuclear Information System (INIS)

    Ashworth, V.; Grant, W.A.; Proctor, R.P.M.

    1976-01-01

    Briefly, the paper provides some basic information on the use of ion beams for surface alloying and surface analysis. After a brief historical review of those fields in which the techniques are already widely applied the important features of typical ion beam machines are described. The basic processes that occur when an ion beam strikes a solid are then considered. Selected ion beam analysis techniques are then discussed. Attention is drawn, wherever possible, to applications in corrosion science and engineering. (author)

  1. Uses of laser optical pumping to produce polarized ion beams

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1983-01-01

    Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H - or 3 He - ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams

  2. Ion beam biotechnology and its application to maize breeding

    International Nuclear Information System (INIS)

    Yu Lixia; Li Wenjian; Dong Xicun; Zhou Libin; Ma Shuang

    2008-01-01

    Since the mid of 1980's, ion beam had been widely used in mutagenic breeding of various crops. Ion beam biotechnology had provided a new way for improving corn variety and creating new germplasm resources, and had promoted the development of maize breeding. The ion beam characteristics, the mutagenic mechanism and its application in maize breeding were described. (authors)

  3. High-powered pulsed-ion-beam acceleration and transport

    Energy Technology Data Exchange (ETDEWEB)

    Humphries, S. Jr.; Lockner, T.R.

    1981-11-01

    The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized.

  4. High-powered pulsed-ion-beam acceleration and transport

    International Nuclear Information System (INIS)

    Humphries, S. Jr.; Lockner, T.R.

    1981-11-01

    The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized

  5. HIGH ENERGY DENSITY PHYSICS EXPERIMENTS WITH INTENSE HEAVY ION BEAMS

    International Nuclear Information System (INIS)

    Bieniosek, F.M.; Henestroza, E.; Leitner, M.; Logan, B.G.; More, R.M.; Roy, P.K.; Ni, P.; Seidl, P.A.; Waldron, W.L.; Barnard, J.J.

    2008-01-01

    The US heavy ion fusion science program has developed techniques for heating ion-beam-driven warm dense matter (WDM) targets. The WDM conditions are to be achieved by combined longitudinal and transverse space-charge neutralized drift compression of the ion beam to provide a hot spot on the target with a beam spot size of about 1 mm, and pulse length about 1-2 ns. As a technique for heating volumetric samples of matter to high energy density, intense beams of heavy ions are capable of delivering precise and uniform beam energy deposition dE/dx, in a relatively large sample size, and the ability to heat any solid-phase target material. Initial experiments use a 0.3 MeV K+ beam (below the Bragg peak) from the NDCX-I accelerator. Future plans include target experiments using the NDCX-II accelerator, which is designed to heat targets at the Bragg peak using a 3-6 MeV lithium ion beam. The range of the beams in solid matter targets is about 1 micron, which can be lengthened by using porous targets at reduced density. We have completed the fabrication of a new experimental target chamber facility for WDM experiments, and implemented initial target diagnostics to be used for the first target experiments in NDCX-1. The target chamber has been installed on the NDCX-I beamline. The target diagnostics include a fast multi-channel optical pyrometer, optical streak camera, VISAR, and high-speed gated cameras. Initial WDM experiments will heat targets by compressed NDCX-I beams and will explore measurement of temperature and other target parameters. Experiments are planned in areas such as dense electronegative targets, porous target homogenization and two-phase equation of state

  6. Light ion beam transport research at NRL

    International Nuclear Information System (INIS)

    Hinshelwood, D.D.; Boller, J.R.; Cooperstein, G.

    1996-01-01

    Transport of light ion beams through low-pressure background gas is under investigation at NRL in support of the light-ion ICF program at Sandia National Laboratories. Scaling experiments and the field solver/orbit code ATHETA have been used to design and construct a focusing, extraction applied-B diode for transport experiments. An active anode source has been developed to provide a high proton fraction in the ion beam and a fast ion turn-on time. A very sensitive Zeeman diagnostic is being developed to determine the net current distribution in the beam/transport system. Both analytical and numerical techniques using several codes are being applied to transport modeling, leading to the capability of full system studies. (author). 1 tab., 5 figs., 10 refs

  7. Condensed matter physics with radioactive ion beams

    International Nuclear Information System (INIS)

    Haas, H.

    1996-01-01

    An overview of the present uses of radioactive ion beams from ISOLDE for condensed matter research is presented. As simple examples of such work, tracer studies of diffusion processes with radioisotopes and blocking/channeling measurements of emitted particles for lattice location are discussed. Especially the application of nuclear hyperfine interaction techniques such as PAC or Moessbauer spectroscopy has become a powerful tool to study local electronic and structural properties at impurities. Recently, interesting information on impurity properties in semiconductors has been obtained using all these methods. The extreme sensitivity of nuclear techniques makes them also well suited for investigations of surfaces, interfaces, and biomolecules. Some ideas for future uses of high energy radioactive ion beams beyond the scope of the present projects are outlined: the study of diffusion in highly immiscible systems by deep implantation, nuclear polarization with the tilted-foil technique, and transmutation doping of wide-bandgap semiconductors. (orig.)

  8. Bayesian analysis of ion beam diagnostics

    International Nuclear Information System (INIS)

    Toussaint, U. von; Fischer, R.; Dose, V.

    2001-01-01

    Ion beam diagnostics are routinely used for quantitative analysis of the surface composition of mixture materials up to a depth of a few μm. Unfortunately, advantageous properties of the diagnostics, like high depth resolution in combination with a large penetration depth, no destruction of the surface, high sensitivity for large as well as for small atomic numbers, and high sensitivity are mutually exclusive. Among other things, this is due to the ill-conditioned inverse problem of reconstructing depth distributions of the composition elements. Robust results for depth distributions are obtained with adaptive methods in the framework of Bayesian probability theory. The method of adaptive kernels allows for distributions which contain only the significant information of the data while noise fitting is avoided. This is achieved by adaptively reducing the degrees of freedom supporting the distribution. As applications for ion beam diagnostics Rutherford backscattering spectroscopy and particle induced X-ray emission are shown

  9. Ion beam therapy fundamentals, technology, clinical applications

    CERN Document Server

    2012-01-01

    The book provides a detailed, up-to-date account of the basics, the technology, and the clinical use of ion beams for radiation therapy. Theoretical background, technical components, and patient treatment schemes are delineated by the leading experts that helped to develop this field from a research niche to its current highly sophisticated and powerful clinical treatment level used to the benefit of cancer patients worldwide. Rather than being a side-by-side collection of articles, this book consists of related chapters. It is a common achievement by 76 experts from around the world. Their expertise reflects the diversity of the field with radiation therapy, medical and accelerator physics, radiobiology, computer science, engineering, and health economics. The book addresses a similarly broad audience ranging from professionals that need to know more about this novel treatment modality or consider to enter the field of ion beam therapy as a researcher. However, it is also written for the interested public an...

  10. Light ion beam transport research at NRL

    Energy Technology Data Exchange (ETDEWEB)

    Hinshelwood, D D; Boller, J R; Cooperstein, G [Naval Research Lab., Washington, DC (United States). Plasma Physics Div.; and others

    1997-12-31

    Transport of light ion beams through low-pressure background gas is under investigation at NRL in support of the light-ion ICF program at Sandia National Laboratories. Scaling experiments and the field solver/orbit code ATHETA have been used to design and construct a focusing, extraction applied-B diode for transport experiments. An active anode source has been developed to provide a high proton fraction in the ion beam and a fast ion turn-on time. A very sensitive Zeeman diagnostic is being developed to determine the net current distribution in the beam/transport system. Both analytical and numerical techniques using several codes are being applied to transport modeling, leading to the capability of full system studies. (author). 1 tab., 5 figs., 10 refs.

  11. Ion beam source construction and applications

    International Nuclear Information System (INIS)

    Torab, S.I.R.

    2011-01-01

    The aim of this thesis is to improve the performance of a new shape cold cathode Penning ion source to be suitable for some applications. In this work, many trials have been made to reach the optimum dimensions of the new shape of cold Molybdenum cathode Penning ion source with radial extraction. The high output ion beam can be extracted in a direction transverse to the discharge region. The new shape cold cathode Penning ion source consists of Copper cylindrical hollow anode of 40 mm length, 12 mm diameter and has two similar cone ends of 15 mm length, 22 mm upper cone diameter and 12 mm bottom cone diameter. The two movable Molybdenum cathodes are fixed in Perspex insulator and placed symmetrically at two ends of the anode. The Copper emission disc of 2 mm thickness and has central aperture of different diameters is placed at the middle of the anode for ion beam exit. The inner surface of the emission disc is isolated from the anode by Perspex insulator except an area of diameter 5 mm to confine the electrical discharge in this area. A movable Faraday cup is placed at different distances from the emission electrode aperture and used to collect the output ion beam from the ion source. The working gases are admitted to the ion source through a hole in the anode via a needle valve which placed between the gas cylinder and the ion source. The optimum anode- cathode distance, the uncovered area diameter of the emission disc, the central aperture diameter of the emission electrode, the distance between emission electrode and Faraday cup have been determined using Argon gas. The optimum distances of the ion source were found to be equal to 6 mm, 5 mm, 2.5 mm, and 3 cm respectively where stable discharge current and maximum output ion beam current at low discharge current can be obtained. The discharge characteristics, ion beam characteristics, and the efficiency of the ion source have been measured at different operating conditions and different gas pressures using

  12. Effects of beam, target and substrate potentials in ion beam processing

    International Nuclear Information System (INIS)

    Harper, J.M.E.

    1982-01-01

    Ion beam etching and deposition are normally carried out with beam, target and substrate potentials near ground potential. In this paper, the effects of intentional or unintentional changes in these potentials are described. Examples include beam neutralization, a single extraction grid, substrate bias, and target bias. Each example is described in terms of beam plasma parameters. (Auth.)

  13. Structural and magnetic properties of ion-beam bombarded Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Lin, K.W.; Guo, J.Y.; Lin, S.R.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Tsai, C.J. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300 (China); Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

    2007-12-15

    A series of [Pt(2 nm)/Co(2 nm)]{sub 10}/Pt(30 nm) multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt{sub 3} phases were developed with increasing End-Hall voltage (V{sub EH}) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing V{sub EH}. After annealing, the formation of CoPt{sub 3} was observed in these ion-beam bombarded samples, resulting in lower coercivities (H{sub c}{proportional_to} 50 Oe). The depressed transition temperature of CoPt{sub 3} for films deposited with the largest V{sub EH} was attributed to distorted CoPt{sub 3} structures that appeared with annealing. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Ion beam induced luminescence characterisation of CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A A; Gonon, P; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

  15. Ion beam induced luminescence characterisation of CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Gonon, P.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

  16. Ion beam analysis of PECVD silicon oxide thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

    2006-01-01

    A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

  17. Progress toward a microsecond duration, repetitively pulsed, intense-ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Davis, H A; Olson, J C; Reass, W A [Los Alamos National Lab., NM (United States); Coates, D M; Hunt, J W; Schleinitz, H M [DuPont Central Research and Development, Wilmington, DE (United States); Lovberg, R H [Univ. of California, San Diego, CA (United States); Greenly, J B [Cornell Univ., Ithaca, NY (United States). Lab. of Plasma Studies

    1997-12-31

    A number of intense ion beams applications are emerging requiring repetitive high-average-power beams. These applications include ablative deposition of thin films, rapid melt and resolidification for surface property enhancement, advanced diagnostic neutral beams for the next generation of Tokamaks, and intense pulsed-neutron sources. A 200-250 keV, 15 kA, 1 {mu}s duration, 1-30 Hz intense ion beam accelerator is being developed to address these applications. (author). 4 figs., 7 refs.

  18. Ion-beam induced structure modifications in amorphous germanium

    International Nuclear Information System (INIS)

    Steinbach, Tobias

    2012-01-01

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy ε n deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 μm thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of ε e HRF =(10.5±1.0) kev nm -1 was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation ε e S a =(12±2) keV nm -1 for the first time extracted for a Ge the characteristic linear behaviour of the

  19. Ion beam stabilization in ion implantation equipment

    International Nuclear Information System (INIS)

    Pina, L.

    1973-01-01

    The results are presented of experimental efforts aimed at ion beam current stabilization in an equipment for ion implantation in solids. The related problems of power supplies are discussed. Measured characteristics of laboratory equipment served the determination of the parameters to be required of the supplies as well as the design and the construction of the supplies. The respective wiring diagram is presented. (J.K.)

  20. Cellular radiobiology of heavy-ion beams

    International Nuclear Information System (INIS)

    Tobias, C.A.; Blakely, E.A.; Ngo, F.Q.H.; Roots, R.J.; Yang, T.C.

    1981-01-01

    Progress is reported in the following areas of this research program: relative biological effectiveness and oxygen enhancement ratio of silicon ion beams; heavy ion effects on the cell cycle; the potentiation effect (2 doses of high LET heavy-ion radiations separated by 2 to 3 hours); potentially lethal damage in actively growing cells and plateau growth cells; radiation induced macromolecular lesions and cellular radiation chemistry; lethal effects of dual radiation; and the development of a biophysical repair/misrepair model

  1. Ion beam figuring of silicon aspheres

    Science.gov (United States)

    Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

    2011-03-01

    Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

  2. High current density ion beam measurement techniques

    International Nuclear Information System (INIS)

    Ko, W.C.; Sawatzky, E.

    1976-01-01

    High ion beam current measurements are difficult due to the presence of the secondary particles and beam neutralization. For long Faraday cages, true current can be obtained only by negative bias on the target and by summing the cage wall and target currents; otherwise, the beam will be greatly distorted. For short Faraday cages, a combination of small magnetic field and the negative target bias results in correct beam current. Either component alone does not give true current

  3. Fast ion beam-laser interactions

    International Nuclear Information System (INIS)

    Berry, H.G.; Young, L.; Engstroem, L.; Hardis, J.E.; Somerville, L.P.; Ray, W.J.; Kurtz, C.

    1985-01-01

    The authors are using collinear laser excitation of fast ion beams to study a number of atomic structure problems. The problems include the determination of fine and hyperfine structure in light positive and negative ions, plus measurements of absolute wavelengths of light from two-electron ions. In addition the authors intend to use a similar experimental arrangement to study excitation and decay of high Rydberg states first in the absence of fields and then in crossed electric and magnetic fields

  4. Ion beam dump for JT-60 NBI

    International Nuclear Information System (INIS)

    Kuriyama, Masaaki; Horiike, Hiroshi; Matsuda, Shinzaburo; Morita, Hiroaki; Shibanuma, Kiyoshi

    1981-10-01

    The design of the active cooling type ion beam dump for JT-60 NBI which receives the total beam power of 5.6 MW for 10 sec continuously is described. It is composed of array of many finned tubes which is made of oxygen free copper with 0.2% silver content. The safety margin against thermal and mechanical troubles is estimated by the heat transfer and the thermal stress calculation. (author)

  5. NSUF Ion Beam Investment Options Workshop Report

    Energy Technology Data Exchange (ETDEWEB)

    Heidrich, Brenden John [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2016-03-01

    The workshop that generated this data was convened to develop a set of recommendations (a priority list) for possible funding in the area of US domestic ion beam irradiation capabilities for nuclear energy-focused RD&D. The results of this workshop were intended for use by the Department of Energy - Office of Nuclear Energy (DOE-NE) for consideration of support for these facilities. The workshop considered, as part of the initial potential future support discussions, input submitted through the Office of Nuclear Energy Request for Information (RFI) (DE-SOL-0008318, April 13, 2015), but welcomed discussion (and presentation) of other options, whether specific or general in scope. Input from users, including DOE-NE program interests and needs for ion irradiation RD&D were also included. Participants were selected from various sources: RFI respondents, NEUP/NEET infrastructure applicants, universities with known expertise in nuclear engineering and materials science and other developed sources. During the three days from March 22-24, 2016, the workshop was held at the Idaho National Laboratory Meeting Center in the Energy Innovation Laboratory at 775 University Drive, Idaho Falls, ID 83401. Thirty-one members of the ion beam community attended the workshop, including 15 ion beam facilities, six representatives of Office of Nuclear Energy R&D programs, an industry representative from EPRI and the chairs of the NSUF User’s Organization and the NSUF Scientific Review Board. Another four ion beam users were in attendance acting as advisors to the process, but did not participate in the options assessment. Three members of the sponsoring agency, the Office of Science and Technology Innovation (NE-4) also attended the workshop.

  6. Development of bipolar-pulse accelerator for intense pulsed ion beam acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Masugata, Katsumi [Department of Electrical and Electronic System Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: masugata@eng.toyama-u.ac.jp; Shimizu, Yuichro [Department of Electrical and Electronic System Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555 (Japan); Fujioka, Yuhki [Department of Electrical and Electronic System Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555 (Japan); Kitamura, Iwao [Department of Electrical and Electronic System Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555 (Japan); Tanoue, Hisao [National Institute of Advanced Industry Science and Technology, 1-1-1, Umezono, Tsukuba-shi, Ibaraki 305-8568 (Japan); Arai, Kazuo [National Institute of Advanced Industry Science and Technology, 1-1-1, Umezono, Tsukuba-shi, Ibaraki 305-8568 (Japan)

    2004-12-21

    To improve the purity of intense pulsed ion beams, a new type of pulsed ion beam accelerator named 'bipolar pulse accelerator' was proposed. To confirm the principle of the accelerator a prototype of the experimental system was developed. The system utilizes By type magnetically insulated acceleration gap and operated with single polar negative pulse. A coaxial gas puff plasma gun was used as an ion source, which was placed inside the grounded anode. Source plasma (nitrogen) of current density {approx}25A/cm2, duration {approx}1.5{mu}s was injected into the acceleration gap by the plasma gun. The ions were successfully accelerated from the grounded anode to the drift tube by applying negative pulse of voltage 240kV, duration 100ns to the drift tube. Pulsed ion beam of current density {approx}40A/cm2, duration {approx}50ns was obtained at 41mm downstream from the anode surface. To evaluate the irradiation effect of the ion beam to solid material, an amorphous silicon thin film of thickness {approx}500nm was used as the target, which was deposited on the glass substrate. The film was found to be poly-crystallized after 4-shots of the pulsed nitrogen ion beam irradiation.

  7. Applications of ion beam analysis workshop. Workshop handbook

    International Nuclear Information System (INIS)

    1995-01-01

    A workshop on applications of ion beam analysis was held at ANSTO, immediate prior to the IBMM-95 Conference in Canberra. It aims was to review developments and current status on use of ion beams for analysis, emphasizing the following aspects: fundamental ion beam research and secondary effects of ion beams; material sciences, geological, life sciences, environmental and industrial applications; computing codes for use in accelerator research; high energy heavy ion scattering and recoil; recent technological development using ion beams. The handbook contains the workshop's program, 29 abstracts and a list of participants

  8. Radioactive ion beam facilities at INFN LNS

    International Nuclear Information System (INIS)

    Rifuggiato, D; Calabretta, L; Celona, L; Chines, F; Cosentino, L; Cuttone, G; Finocchiaro, P; Pappalardo, A; Re, M; Rovelli, A

    2011-01-01

    Radioactive ion beams are produced at INFN- Laboratori Nazionali del Sud (LNS) by means of the two operating accelerators, the Tandem and the Superconducting Cyclotron (CS), originally designed to accelerate stable beams. Both the ISOL (Isotope Separation On Line) and the IFF (In-Flight Fragmentation) methods are exploited to produce RIBs in two different ways at different energies: in the first case, the Cyclotron is the primary accelerator and the Tandem accelerates the secondary beams, while in the second case radioactive fragments are produced by the Cyclotron beam in a thin target with energies comparable to the primary beam energy. The ISOL facility is named EXCYT (Exotics at the Cyclotron and Tandem) and was commissioned in 2006, when the first radioactive beam ( 8 Li) has been produced. The IFF installation is named FRIBs (in Flight Radioactive Ion Beams), and it has started to produce radioactive beams in 2001, placing a thin target in the extraction beam line of the Cyclotron. The development of both facilities to produce and accelerate radioactive ion beams at LNS, is briefly described, with some details on the future prospects that are presently under consideration or realization.

  9. Ion beams in silicon processing and characterization

    International Nuclear Information System (INIS)

    Chason, E.; Picraux, S.T.; Poate, J.M.; Borland, J.O.; Current, M.I.; Diaz de la Rubia, T.; Eaglesham, D.J.; Holland, O.W.; Law, M.E.; Magee, C.W.; Mayer, J.W.; Melngailis, J.; Tasch, A.F.

    1997-01-01

    General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges. copyright 1997 American Institute of Physics

  10. A Pulse Power Modulator System for Commercial High Power Ion Beam Surface Treatment Applications

    International Nuclear Information System (INIS)

    Barrett, D.M.; Cockreham, B.D.; Dragt, A.J.; Ives, H.C.; Neau, E.L.; Reed, K.W.; White, F.E.

    1999-01-01

    The Ion Beam Surface Treatment (lBESTrM) process utilizes high energy pulsed ion beams to deposit energy onto the surface of a material allowing near instantaneous melting of the surface layer. The melted layer typically re-solidifies at a very rapid rate which forms a homogeneous, fine- grained structure on the surface of the material resulting in significantly improved surface characteristics. In order to commercialize the IBESTTM process, a reliable and easy-to-operate modulator system has been developed. The QM-I modulator is a thyratron-switched five-stage magnetic pulse compression network which drives a two-stage linear induction adder. The adder provides 400 kV, 150 ns FWHM pulses at a maximum repetition rate of 10 pps for the acceleration of the ion beam. Special emphasis has been placed upon developing the modulator system to be consistent with long-life commercial service

  11. A one-dimensional ion beam figuring system for x-ray mirror fabrication

    International Nuclear Information System (INIS)

    Idir, Mourad; Huang, Lei; Bouet, Nathalie; Kaznatcheev, Konstantine; Vescovi, Matthew; Lauer, Ken; Conley, Ray; Rennie, Kent; Kahn, Jim; Nethery, Richard; Zhou, Lin

    2015-01-01

    We report on the development of a one-dimensional Ion Beam Figuring (IBF) system for x-ray mirror polishing. Ion beam figuring provides a highly deterministic method for the final precision figuring of optical components with advantages over conventional methods. The system is based on a state of the art sputtering deposition system outfitted with a gridded radio frequency inductive coupled plasma ion beam source equipped with ion optics and dedicated slit developed specifically for this application. The production of an IBF system able to produce an elongated removal function rather than circular is presented in this paper, where we describe in detail the technical aspect and present the first obtained results

  12. A one-dimensional ion beam figuring system for x-ray mirror fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Idir, Mourad, E-mail: midir@bnl.gov; Huang, Lei; Bouet, Nathalie; Kaznatcheev, Konstantine; Vescovi, Matthew; Lauer, Ken [NSLS-II, Brookhaven National Laboratory, P.O. Box 5000, Upton, New York 11973 (United States); Conley, Ray [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Rennie, Kent; Kahn, Jim; Nethery, Richard [Kaufman & Robinson, Inc., 1330 Blue Spruce Drive, Fort Collins, Colorado 80524 (United States); Zhou, Lin [College of Mechatronics and Automation, National University of Defense Technology, 109 Deya Road, Changsha, Hunan 410073 (China); Hu’nan Key Laboratory of Ultra-precision Machining Technology, Changsha, Hunan 410073 (China)

    2015-10-15

    We report on the development of a one-dimensional Ion Beam Figuring (IBF) system for x-ray mirror polishing. Ion beam figuring provides a highly deterministic method for the final precision figuring of optical components with advantages over conventional methods. The system is based on a state of the art sputtering deposition system outfitted with a gridded radio frequency inductive coupled plasma ion beam source equipped with ion optics and dedicated slit developed specifically for this application. The production of an IBF system able to produce an elongated removal function rather than circular is presented in this paper, where we describe in detail the technical aspect and present the first obtained results.

  13. Challenges of fabricating plasmonic and photonic structures with Neon ion beam milling

    DEFF Research Database (Denmark)

    Leißner, Till; Fiutowski, Jacek; Bozhevolnyi, Sergey I.

    -established electron beam lithography and focussed ion beam milling (FIB) using Gallium ions. These techniques, however, are to some extend limited in their resolution, and in addition Gallium and Carbon are implanted and deposited into the plasmonic structures during FIB process, potentially changing plasmonic...... properties. We are currently studying the capabilities of focussed Helium and Neon ion beam milling for the fabricating of plasmonic and photonic devices. We found that Neon ion beam milling enables us to prepare plasmonic structures, such as trenches (see Fig. 1) and V-grooves without doping and alloying...... effects specific to Galium FIB. Neon FIB milling is superior to Helium FIB milling in terms of the processing speed and smaller levels of implanted ions. From our perspective it is the most promising technique for the fabrication of individual plasmonic devices with a few nanometers precision. The main...

  14. Proteome Changes in Maize Embryo (Zea mays L) Induced by Ion Beam Implantation Treatment

    International Nuclear Information System (INIS)

    Li Yongliang; Qin Guangyong; Huo Yuping; Tian Shuangqi; Tang Jihua

    2009-01-01

    Low energy ion beam implantation was applied to the maize (Zea mays L) embryo proteome using two-dimensional gel electrophoresis. Protein profile analysis detected more than 1100 protein spots, 72 of which were determined to be expressed differently in the treated and control (not exposed to ion beam implantation) embryos. Of the 72 protein spots, 53 were up-regulated in the control and 19 were more abundantly expressed in the ion beam-treated embryos. The spots of up- or down-regulated proteins were identified by matrix assisted laser desorption/ionization-time of flight mass spectrometry (MALDI-TOF-MS). Among the identified proteins, 11 were up-regulated in the treated embryos. Four of these up-regulated proteins were antioxidant molecules, three were related to stress response, two to sugar metabolism and two were associated with heat shock response. Of the five proteins up-regulated in the control embryos, three were functionally related to carbohydrate metabolism; the functions of the remaining two proteins were unknown. The data collected during this study indicate that treatment of maize embryos with low energy ion beam implantation induces changes in stress tolerance enzymes/proteins, possibly as a result of alterations in metabolism. (ion beam bioengineering)

  15. Numerical simulation research of 300 kV, 5 electrodes negative ion beam system

    International Nuclear Information System (INIS)

    Wang Huisan; Jian Guangde

    2001-01-01

    According to the characteristic of high current negative ion beam extraction and acceleration system for negative ion-based neutral beam injector, a numerical simulation model and a calculation code of the negative ion beam system are established in order to assist the design of the system. The movement behavior of the negative ion beam and accompanying electron beam in joint effect of the electric and magnetic field of the system is calculated. The effect of relative parameters on the negative ion beam optics characteristic is investigated, such as beam density, negative ion initial temperature and stripping losses, final electrode aperture displacement. The electromagnetic configuration in the system is optimized. The initial optimized results for the 300 kV, 5 electrodes negative ion beam system show that the magnetic field of this system can deflect the electron beam to the extraction electrode as electron acceptor at lower energy and that assuming 20% stripping losses of the H - ion in extraction region and 21 mA ·cm -2 extracted H - beam density, the r.m.s. divergence angle of all output beam lets and divergence angle of 85% output beam lets are 0.327 deg. and 0.460 deg., respectively

  16. Highly Compressed Ion Beams for High Energy Density Science

    CERN Document Server

    Friedman, Alex; Briggs, Richard J; Callahan, Debra; Caporaso, George; Celata, C M; Davidson, Ronald C; Faltens, Andy; Grant-Logan, B; Grisham, Larry; Grote, D P; Henestroza, Enrique; Kaganovich, Igor D; Lee, Edward; Lee, Richard; Leitner, Matthaeus; Nelson, Scott D; Olson, Craig; Penn, Gregory; Reginato, Lou; Renk, Tim; Rose, David; Sessler, Andrew M; Staples, John W; Tabak, Max; Thoma, Carsten H; Waldron, William; Welch, Dale; Wurtele, Jonathan; Yu, Simon

    2005-01-01

    The Heavy Ion Fusion Virtual National Laboratory (HIF-VNL) is developing the intense ion beams needed to drive matter to the High Energy Density (HED) regimes required for Inertial Fusion Energy (IFE) and other applications. An interim goal is a facility for Warm Dense Matter (WDM) studies, wherein a target is heated volumetrically without being shocked, so that well-defined states of matter at 1 to 10 eV are generated within a diagnosable region. In the approach we are pursuing, low to medium mass ions with energies just above the Bragg peak are directed onto thin target "foils," which may in fact be foams or "steel wool" with mean densities 1% to 100% of solid. This approach complements that being pursued at GSI, wherein high-energy ion beams deposit a small fraction of their energy in a cylindrical target. We present the requirements for warm dense matter experiments, and describe suitable accelerator concepts, including novel broadband traveling wave pulse-line, drift-tube linac, RF, and single-gap approa...

  17. Development of ion beam sputtering techniques for actinide target preparation

    Science.gov (United States)

    Aaron, W. S.; Zevenbergen, L. A.; Adair, H. L.

    1985-06-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of a minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity actinides in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed.

  18. Secondary particle tracks generated by ion beam irradiation

    Science.gov (United States)

    García, Gustavo

    2015-05-01

    The Low Energy Particle Track Simulation (LEPTS) procedure is a powerful complementary tool to include the effect of low energy electrons and positrons in medical applications of radiation. In particular, for ion-beam cancer treatments provides a detailed description of the role of the secondary electrons abundantly generated around the Bragg peak as well as the possibility of using transmuted positron emitters (C11, O15) as a complement for ion-beam dosimetry. In this study we present interaction probability data derived from IAM-SCAR corrective factors for liquid environments. Using these data, single electron and positron tracks in liquid water and pyrimidine have been simulated providing information about energy deposition as well as the number and type of interactions taking place in any selected ``nanovolume'' of the irradiated area. In collaboration with Francisco Blanco, Universidad Complutense de Madrid; Antonio Mu noz, Centro de Investigaciones Energéticas Medioambientales y Tecnológicas and Diogo Almeida, Filipe Ferreira da Silva, Paulo Lim ao-Vieira, Universidade Nova de Lisboa. Supported by the Spanish and Portuguese governments.

  19. The use of low energy ion beams for the growth and processing of solid materials

    International Nuclear Information System (INIS)

    Armour, D.G.; Al-Bayati, A.H.; Gordon, J.S.

    1992-01-01

    Low energy ion bombardment forms the basis of ion assisted etching and growth of materials in plasma and ion beam systems. The growing demands for low temperature, highly controlled processing has led a rapid increase in both the application of low energy beams and the study of the fundamental ion surface interactions involved. The growth in the practical applications of ion beams in the few eV to a few hundred eV range has presented new problems in the production and transport of ion beams and has led to the development of highly specialised, ultra-low energy systems. These technological developments, in conjunction with the improvements in understanding of fundamental processes have widened the range of applications of low energy beams. (author) 52 refs

  20. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  1. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    International Nuclear Information System (INIS)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

    2002-01-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  2. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    Science.gov (United States)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  3. Ion beam heating for fast ignition

    International Nuclear Information System (INIS)

    Gus'kov, S.Yu.; Limpouch, J.; Klimo, O.

    2010-01-01

    Complete text of publication follows. The characteristics features of the formation of the spatial distribution of the energy transferred to the plasma from a beam of ions with different initial energies, masses and charges under fast ignition conditions are determined. The motion of the Bragg peak is extended with respect to the spatial distribution of the temperature of the ion-beam-heated medium. The parameters of the ion beams are determined to initiate different regimes of fast ignition of thermonuclear fuel precompressed to a density of 300-500 g/cm 3 - the edge regime, in which the ignition region is formed at the outer boundary of the fuel, and the internal regime, in which the ignition region is formed in central parts of the fuel. The conclusion on the requirements for fast ignition by light and heavy ion beams is presented. It is shown that the edge heating with negative temperature gradient is described by a self-similar solution. Such a temperature distribution is the reason of the fact that the ignited beam energy at the edge heating is larger than the minimal ignition energy by factor 1.65. The temperature Bragg peak may be produced by ion beam heating in the reactor scale targets with pR-parameter larger than 3-4 g/cm 2 . In particular, for central ignition of the targets with pR-parameters in the range of 4-8 g/cm 2 the ion beam energy should be, respectively, from 5 to 7 times larger than the minimal ignition energy. The work by S.Ye. Gus'kov, D.V. Il'in, and V.E. Sherman was supported by the Ministry of Education and Science of the Russian Federation under the program 'Development of the Scientific Potential of High Education for 2009-2010' (project no. 2.1.1/1505) and the Russian Foundation for Basic Research (project no. 08-02-01394 a ). The work by J. Limpouch and O. Klimo was supported by the Czech Ministry of Education (project no. LC528, MSM6840770022).

  4. Realization of a diamond based high density multi electrode array by means of Deep Ion Beam Lithography

    International Nuclear Information System (INIS)

    Picollo, F.; Battiato, A.; Bernardi, E.; Boarino, L.; Enrico, E.; Forneris, J.; Gatto Monticone, D.; Olivero, P.

    2015-01-01

    In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an optically transparent and highly insulating matrix. The proposed fabrication process consists in the combination of Deep Ion Beam Lithography (DIBL) and Focused Ion Beam (FIB) milling. FIB micromachining is employed to define micro-apertures in the contact masks consisting of thin (<10 μm) deposited metal layers through which ions are implanted in the sample. A prototypical single-cell biosensor was realized with the above described technique. The biosensor has 16 independent electrodes converging inside a circular area of 20 μm diameter (typical neuroendocrine cells size) for the simultaneous recording of amperometric signals

  5. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M L; Roberts, A; Nugent, K; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  6. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  7. Deflagration wave formed by ion beam, 2

    International Nuclear Information System (INIS)

    Abe, T.; Kasuya, K.; Niu, K.; Tamba, M.

    1979-06-01

    Analyses are given for structures of deflagration waves formed by ion beams in spherical targets. The singularity at the sonic point disappears in the spherical target if the beam pressure is in balance with the plasma pressure. The expanding supersonic flow of the background plasma can be connected with the subsonic flow in the core of the target through the deflagration wave. The length and the strength of the deflagration wave in the spherical target is comparable with the corresponding ones in the slab target. (author)

  8. Laboratory of ion beam applications at ATOMKI

    International Nuclear Information System (INIS)

    Borbely-Kiss, I.; Huszank, R.; Kertesz, Zs.; Kiss, A.Z.; Koltay, E.; Rajta, I.; Simon, A.; Szabo, Gy.; Szikszai, Z.; Szilasi, S.Z.; Szoboszlai, Z.; Uzonyi, I.

    2008-01-01

    Introduction. The Laboratory of Ion Beam Applications of ATOMKI is devoted to applications of atomic and nuclear physics in the fields of environmental research, biomedicine, geology, materials and surface science (including ion beam induced damage investigations and proton beam lithography) and cultural heritage research. We perform our work in the frame of various projects and collaborations: EU, IAEA, R and D, OTKA, etc. Our laboratory provides service for external (national and international) and internal users and contributes to higher education, as well. The Laboratory is based on the home-made 5 MV Van de Graaff (VdG) electrostatic accelerator of the institute. The accelerator was put into operation in 1971 and in the beginning it supplied ion beams exclusively for nuclear physics. A few years later with the measurements of K-shell ionization cross sections the door became open also for basic atomic physics. In parallel with this basic study, the application of proton induced X-ray emission (PIXE) for the elemental analysis of biological (hair, erythrocyte and blood plasma) samples and atmospheric aerosols also started. The first paper on PIXE, a methodological one, was published in 1978. The experience gained on these applications and later on archaeology led to the construction of complex PIXE chambers, which were sold, together with the corresponding know-how, to institutions in China, Portugal, Bangladesh, Jordan, North Korea, Singapore, Cuba and Mexico through the International Atomic Energy Agency (IAEA). For the evaluation of PIXE spectra the laboratory has been continuously developing its own computer programme package. The first version of this continuous development was published in 1988. In the meantime a second IBA analysis method, the proton induced gamma ray emission (PIGE), was introduced in the laboratory and was applied simultaneously with PIXE. Application of deuteron induced gamma ray emission (DIGE) started more than a decade later. A

  9. Improvement of herbage by heavy ion beams

    International Nuclear Information System (INIS)

    Xie Hongmei; Hao Jifang; Wei Zengquan; Xie Zhongkui; Li Fengqin; Wang Yajun

    2004-01-01

    Herbage seeds of legume and grass were irradiated in penetration by 80 MeV/u 20 Ne 10+ ions. The results of field tests and observations of the root-tip cells showed that growth of the seedling was obviously weakened with increasing doses. Frequencies of chromosomal aberration and micronucleus increased significantly with increasing doses. According to the field growth tests, radiation sensitivity of grass herbage to the heavy ion beams was much higher than leguminous herbage, and suitable dose of the heavy ion irradiation for the grass and leguminous herbage is 20-30 Gy and 150 Gy, respectively

  10. High spin studies with radioactive ion beams

    International Nuclear Information System (INIS)

    Garrett, J.D.

    1992-01-01

    The variety of new research possibilities afforded by the culmination of the two frontier areas of nuclear structure: high spin and studies far from nuclear stability (utilizing intense radioactive ion beams) are discussed. Topics presented include: new regions of exotic nuclear shape (e.g. superdeformation, hyperdeformation, and reflection-asymmetric shapes); the population of and consequences of populating exotic nuclear configurations; and complete spectroscopy (i.e. the overlap of state of the art low-and high-spin studies in the same nucleus)

  11. Physics with fast molecular-ion beams

    International Nuclear Information System (INIS)

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented

  12. Barium ion beam. Annual progress report

    International Nuclear Information System (INIS)

    Lazar, N.; Dandl, R.; Rynn, N.; Wickham, M.

    1985-01-01

    The barium ion beam Zeeman diagnostic is an in situ nonperturbing diagnostic designed to measure both the plasma electric and magnetic fields in devices such as STM and EBT. The diagnostic satisfies the requirements of high precision, spatial resolution and nonperturbation of the plasma. The technique uses resonance absorption of light from a single moded laser in a beam of energetic barium ions to measure the Zeeman effect in the absorption spectrum (to measure changes in the magnetic field) and to observe the changes in beam velocity by the Doppler shift of the absorption lines

  13. High spin studies with radioactive ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Garrett, J D [Oak Ridge National Lab., TN (United States)

    1992-08-01

    The variety of new research possibilities afforded by the culmination of the two frontier areas of nuclear structure: high spin and studies far from nuclear stability (utilizing intense radioactive ion beams) are discussed. Topics presented include: new regions of exotic nuclear shape (e.g. superdeformation, hyperdeformation, and reflection-asymmetric shapes); the population of and consequences of populating exotic nuclear configurations; and, complete spectroscopy (i.e. the overlap of state of the art low- and high-spin studies in the same nucleus). (author). 47 refs., 8 figs.

  14. Broad ion beam serial section tomography

    Energy Technology Data Exchange (ETDEWEB)

    Winiarski, B., E-mail: b.winiarski@manchester.ac.uk [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Materials Division, National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Gholinia, A. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Mingard, K.; Gee, M. [Materials Division, National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Thompson, G.E.; Withers, P.J. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom)

    2017-01-15

    Here we examine the potential of serial Broad Ion Beam (BIB) Ar{sup +} ion polishing as an advanced serial section tomography (SST) technique for destructive 3D material characterisation for collecting data from volumes with lateral dimensions significantly greater than 100 µm and potentially over millimetre sized areas. Further, the associated low level of damage introduced makes BIB milling very well suited to 3D EBSD acquisition with very high indexing rates. Block face serial sectioning data registration schemes usually assume that the data comprises a series of parallel, planar slices. We quantify the variations in slice thickness and parallelity which can arise when using BIB systems comparing Gatan PECS and Ilion BIB systems for large volume serial sectioning and 3D-EBSD data acquisition. As a test case we obtain 3D morphologies and grain orientations for both phases of a WC-11%wt. Co hardmetal. In our case we have carried out the data acquisition through the manual transfer of the sample between SEM and BIB which is a very slow process (1–2 slice per day), however forthcoming automated procedures will markedly speed up the process. We show that irrespective of the sectioning method raw large area 2D-EBSD maps are affected by distortions and artefacts which affect 3D-EBSD such that quantitative analyses and visualisation can give misleading and erroneous results. Addressing and correcting these issues will offer real benefits when large area (millimetre sized) automated serial section BIBS is developed. - Highlights: • In this work we examine how microstructures can be reconstructed in three-dimensions (3D) by serial argon broad ion beam (BIB) milling, enabling much larger volumes (>250×250×100µm{sup 3}) to be acquired than by serial section focused ion beam-scanning electron microscopy (FIB-SEM). • The associated low level of damage introduced makes BIB milling very well suited to 3D-EBSD acquisition with very high indexing rates. • We explore

  15. Light-ion beam for microelectronic applications

    International Nuclear Information System (INIS)

    Hirsch, L.; Tardy, P.; Wantz, G.; Huby, N.; Moretto, P.; Serani, L.; Natali, F.; Damilano, B.; Duboz, J.Y.; Reverchon, J.L.

    2005-01-01

    In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue (λ = 450 nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10 deg. , 25 deg. and 50 deg. ). In a second part of the paper, ion beam induced charges study has been carried out, with a 2 MeV 4 He + micro-beam, on metal-semiconductor-metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes

  16. Profiling hydrogen in materials using ion beams

    International Nuclear Information System (INIS)

    Ziegler, J.F.; Wu, C.P.; Williams, P.

    1977-01-01

    Over the last few years many ion beam techniques have been reported for the profiling of hydrogen in materials. Nine of these were evaluated using similar samples of hydrogen ion-implanted into silicon. When possible the samples were analyzed using two or more techniques to confirm the ion-implanted accuracy. The results of this analysis which has produced a consensus profile of H in silicon which is useful as a calibration standard are reported. The analytical techniques used have capabilities ranging from very high depth resolution (approximately 50 A) and high sensitivity (less than 1 ppM) to deep probes for hydrogen which can sample throughout thin sheets

  17. Deposition of single-layer and graded aluminum nitride coatings on vanadium substrates using ion-beam assisted reactive evaporation (ITER task no. ETA-EC-BLR26)

    International Nuclear Information System (INIS)

    Jamarani, F.; Lang, R.; Owles, R.

    1994-06-01

    The objective of the project has been to develop a reactive evaporation process for the fabrication of aluminum nitride coatings on pure vanadium substrates. The aluminum nitride coatings are to be used as electrical insulators on the surfaces of structural materials in contact with liquid metal coolants. (author). 9 refs., 2 tabs., 5 figs

  18. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Czech Academy of Sciences Publication Activity Database

    Vlčák, P.; Jirka, Ivan

    2016-01-01

    Roč. 2016, č. 2016 (2016), 1697090 ISSN 1687-4110 Institutional support: RVO:61388955 Keywords : carbon-based nanolayers * Ti6Al4V * nanotechnology Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.871, year: 2016

  19. Fabrication of platinum nanopillars on peptide-based soft structures using a focused ion beam

    International Nuclear Information System (INIS)

    Joshi, K B; Singh, Prabhpreet; Verma, Sandeep

    2009-01-01

    An expedient entry into the construction of bionanocomposites by merging peptide self-assembly, focused ion beam milling, and electron beam-induced deposition is described. Hexapeptides 1 and 2 revealed spherical self-assembled structures which are confirmed by a scanning electron microscope (SEM), atomic force microscope (AFM), focused ion beam/high-resolution scanning electron microscope (FIB-HRSEM), and high-resolution transmission electron microscopy (HRTEM). The microspheres from 1 and 2 are milled with the help of an ion beam to create different shapes. Soft spherical peptide-based structures were also subjected to fabrication under a gallium ion beam, followed by deposition of platinum pillars through a direct write process. It is envisaged that such hybrid bionanocomposites could have applications ranging from Pt-based hydrogenation catalysts to bioelectronics. In addition, such a fabrication process might also be useful to electrically connect two biological systems in order to study an electrical signal or electron transport phenomenon and structural transformations

  20. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  1. Proceedings of national seminar on physics with radioactive ion beams

    International Nuclear Information System (INIS)

    Chintalapudi, S.N.; Shyam, R.

    1991-01-01

    This volume containing the proceedings of the national seminar on physics with radioactive ion beams gives a broad overview of the developments taking place in the area of nuclear physics and accelerator physics with special emphasis on the utilization of radioactive ion beams for various studies. Topics covered include studies on nuclear structure and nuclear astrophysics and the wide ranging applications of radioactive ion beams in these and other areas of nuclear sciences. Papers relevant to INIS are indexed separately

  2. Multiple Electron Stripping of Heavy Ion Beams

    International Nuclear Information System (INIS)

    Mueller, D.; Grisham, L.; Kaganovich, I.; Watson, R. L.; Horvat, V.; Zaharakis, K. E.; Peng, Y.

    2002-01-01

    One approach being explored as a route to practical fusion energy uses heavy ion beams focused on an indirect drive target. Such beams will lose electrons while passing through background gas in the target chamber, and therefore it is necessary to assess the rate at which the charge state of the incident beam evolves on the way to the target. Accelerators designed primarily for nuclear physics or high energy physics experiments utilize ion sources that generate highly stripped ions in order to achieve high energies economically. As a result, accelerators capable of producing heavy ion beams of 10 to 40 Mev/amu with charge state 1 currently do not exist. Hence, the stripping cross-sections used to model the performance of heavy ion fusion driver beams have, up to now, been based upon theoretical calculations. We have investigated experimentally the stripping of 3.4 Mev/amu Kr 7+ and Xe +11 in N2; 10.2 MeV/amu Ar +6 in He, N2, Ar and Xe; 19 MeV/amu Ar +8 in He, N2, Ar and Xe; 30 MeV He 1 + in He, N2, Ar and Xe; and 38 MeV/amu N +6 in He, N2, Ar and Xe. The results of these measurements are compared with the theoretical calculations to assess their applicability over a wide range of parameters

  3. High repetition rate intense ion beam source

    International Nuclear Information System (INIS)

    Hammer, D.A.; Glidden, S.C.; Noonan, B.

    1992-01-01

    This final report describes a ≤ 150kV, 40kA, 100ns high repetition rate pulsed power system and intense ion beam source which is now in operation at Cornell University. Operation of the Magnetically-controlled Anode Plasma (MAP) ion diode at > 100Hz (burst mode for up to 10 pulse bursts) provides an initial look at repetition rate limitations of both the ion diode and beam diagnostics. The pulsed power systems are capable of ≥ 1kHz operation (up to 10 pulse bursts), but ion diode operation was limited to ∼100Hz because of diagnostic limitations. By varying MAP diode operating parameters, ion beams can be extracted at a few 10s of keV or at up to 150keV, the corresponding accelerating gap impedance ranging from about 1Ω to about 10Ω. The ability to make hundreds of test pulses per day at an average repetition rate of about 2 pulses per minute permits statistical analysis of diode operation as a function of various parameters. Most diode components have now survived more than 10 4 pulses, and the design and construction of the various pulsed power components of the MAP diode which have enabled us to reach this point are discussed. A high speed data acquisition system and companion analysis software capable of acquiring pulse data at 1ms intervals (in bursts of up to 10 pulses) and processing it in ≤ min is described

  4. Time resolved ion beam induced charge collection

    International Nuclear Information System (INIS)

    Sexton W, Frederick; Walsh S, David; Doyle L, Barney; Dodd E, Paul

    2000-01-01

    Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a -.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients

  5. Focused ion beam milling of carbon fibres

    International Nuclear Information System (INIS)

    Huson, Mickey G.; Church, Jeffrey S.; Hillbrick, Linda K.; Woodhead, Andrea L.; Sridhar, Manoj; Van De Meene, Allison M.L.

    2015-01-01

    A focused ion beam has been used to mill both individual carbon fibres as well as fibres in an epoxy composite, with a view to preparing flat surfaces for nano-indentation. The milled surfaces have been assessed for damage using scanning probe microscopy nano-indentation and Raman micro-probe analysis, revealing that FIB milling damages the carbon fibre surface and covers surrounding areas with debris of disordered carbon. The debris is detected as far as 100 μm from the milling site. The energy of milling as well as the orientation of the beam was varied and shown to have an effect when assessed by Raman spectroscopy. - Highlights: • Focused ion beam (FIB) milling was used to mill flat surfaces on carbon fibres. • Raman spectroscopy showed amorphous carbon was generated during FIB milling. • The amorphous debris is detected as far as 100 μm from the milling site. • This surface degradation was confirmed by nano-indentation experiments.

  6. Time resolved ion beam induced charge collection

    Energy Technology Data Exchange (ETDEWEB)

    SEXTON,FREDERICK W.; WALSH,DAVID S.; DOYLE,BARNEY L.; DODD,PAUL E.

    2000-04-01

    Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a {minus}.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients.

  7. Multicharged and intense heavy ion beam sources

    International Nuclear Information System (INIS)

    Kutner, V.B.

    1981-01-01

    The cyclotron plasma-are source (PIG), duoplasmatron (DP), laser source (LS), electron beam ion source (EBIS) and electron cyclotron resonance source (ECRS) from the viewpoint of generating intense and high charge state beams are considered. It is pointed out that for the last years three types of multicharged ion sources-EBIS, ECR and LS have been essentially developed. In the EBIS source the Xe 48+ ions are produced. The present day level of the development of the electron-beam ionization technique shows that by means of this technique intensive uranium nuclei beams production becomes a reality. On the ECR source Xe 26+ approximately 4x10 10 h/s, Asub(r)sup(12+) approximately 10 12 h/s intensive ion beams are produced. In the laser source a full number of C 6+ ions during one laser pulse constitutes not less than 10 10 from the 5x10mm 2 emission slit. At the present time important results are obtained pointing to the possibility to separate the ion component of laser plasma in the cyclotron central region. On the PIG source the Xe 15+ ion current up to 10μA per pulse is produced. In the duoplasmatron the 11-charge state of xenon ion beams is reached [ru

  8. Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

    International Nuclear Information System (INIS)

    Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

    1998-01-01

    Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

  9. Steady-State Ion Beam Modeling with MICHELLE

    Science.gov (United States)

    Petillo, John

    2003-10-01

    There is a need to efficiently model ion beam physics for ion implantation, chemical vapor deposition, and ion thrusters. Common to all is the need for three-dimensional (3D) simulation of volumetric ion sources, ion acceleration, and optics, with the ability to model charge exchange of the ion beam with a background neutral gas. The two pieces of physics stand out as significant are the modeling of the volumetric source and charge exchange. In the MICHELLE code, the method for modeling the plasma sheath in ion sources assumes that the electron distribution function is a Maxwellian function of electrostatic potential over electron temperature. Charge exchange is the process by which a neutral background gas with a "fast" charged particle streaming through exchanges its electron with the charged particle. An efficient method for capturing this is essential, and the model presented is based on semi-empirical collision cross section functions. This appears to be the first steady-state 3D algorithm of its type to contain multiple generations of charge exchange, work with multiple species and multiple charge state beam/source particles simultaneously, take into account the self-consistent space charge effects, and track the subsequent fast neutral particles. The solution used by MICHELLE is to combine finite element analysis with particle-in-cell (PIC) methods. The basic physics model is based on the equilibrium steady-state application of the electrostatic particle-in-cell (PIC) approximation employing a conformal computational mesh. The foundation stems from the same basic model introduced in codes such as EGUN. Here, Poisson's equation is used to self-consistently include the effects of space charge on the fields, and the relativistic Lorentz equation is used to integrate the particle trajectories through those fields. The presentation will consider the complexity of modeling ion thrusters.

  10. Enhancement of CNT-based filters efficiency by ion beam irradiation

    Science.gov (United States)

    Elsehly, Emad M.; Chechenin, N. G.; Makunin, A. V.; Shemukhin, A. A.; Motaweh, H. A.

    2018-05-01

    It is shown in the report that disorder produced by ion beam irradiation can enhance the functionality of the carbon nanotubes. The filters of pressed multiwalled carbon nanotubes (MWNTs) were irradiated by He+ ions of the energy E = 80 keV with the fluence 2 × 1016 ion/cm2. The removal of manganese from aqueous solutions by using pristine and ion beam irradiated MWNTs filters was studied as a function of pH, initial concentration of manganese in aqueous solution, MWNT mass and contact time. The filters before and after filtration were characterized by Raman (RS) and energy dispersive X-ray spectroscopy (EDS) techniques to investigate the deposition content in the filter and defect formation in the MWNTs. The irradiated samples showed an enhancement of removal efficiency of manganese up to 97.5% for 10 ppm Mn concentration, suggesting that irradiated MWNT filter is a better Mn adsorbent from aqueous solutions than the pristine one. Radiation-induced chemical functionalization of MWNTs due to ion beam irradiation, suggesting that complexation between the irradiated MWNTs and manganese ions is another mechanism. This conclusion is supported by EDS and RS and is correlated with a larger disorder in the irradiated samples as follows from RS. The study demonstrates that ion beam irradiation is a promising tool to enhance the filtration efficiency of MWNT filters.

  11. The quest for crystalline ion beams

    CERN Document Server

    Schramm, U; Bussmann, M; Habs, D

    2002-01-01

    The phase transition of an ion beam into its crystalline state has long been expected to dramatically influence beam dynamics beyond the limitations of standard accelerator physics. Yet, although considerable improvement in beam cooling techniques has been made, strong heating mechanisms inherent to existing high-energy storage rings have prohibited the formation of the crystalline state in these machines up to now. Only recently, laser cooling of low-energy beams in the table-top rf quadrupole storage ring PAaul Laser cooLing Acceleration System (PALLAS) has lead to the experimental realization of crystalline beams. In this article, the quest for crystalline beams as well as their unique properties as experienced in PALLAS will be reviewed.

  12. Cooled heavy ion beams at the ESR

    International Nuclear Information System (INIS)

    Steck, M.; Beckert, K.; Bosch, F.; Eickhoff, H.; Franzke, B.; Klepper, O.; Nolden, F.; Reich, H.; Schlitt, B.; Spaedtke, P.; Winkler, T.

    1996-01-01

    The storage ring ESR has been used in various operational modes for experiments with electron cooled heavy ion beams. Besides the standard storage mode including injection and beam accumulation the deceleration of highly charged ions has been demonstrated. Beams of highly charged ions have been injected and accumulated and finally decelerated to a minimum energy of 50 MeV/u. An ultraslow extraction method using charge changing processes is now also available for cooled beams of highly charged ions. For in ring experiments the internal gas jet and the cold electron beam of the cooling system are applied as targets. High precision mass spectrometry by Schottky noise detection has been demonstrated. Operation at transition energy has been achieved with cooled beams opening the field for experiments which require an isochronous revolution of the ions. (orig.)

  13. Filamentation of a converging heavy ion beam

    International Nuclear Information System (INIS)

    Lee, E.P.; Buchanan, H.L.; Rosenbluth, M.N.

    1980-01-01

    A major concern in the use of heavy ion beams as igniters in pellet fusion systems is the vulnerability of the beam to the transverse flamentation instability. The undesirable consequence of this mode is the transverse heating of the beam to the extent that convergence on the pellet becomes impossible. This work considers the case of a beam injected into a gas filled reactor vessel, where finite pulse length and propagation distance play an important role in limiting growth. Two geometries are analyzed: a nonconverging case where the radius at injection is nearly equal to the desired radius at the pellet, and a converging case in which the injection radius is large and the beam is pre-focused to converge at the target. It is found that a cold beam will be severely disrupted if the product of the magnetic plasma frequency and the propagation distance is much larger than unity

  14. Mutation induction of orchids by ion beams

    International Nuclear Information System (INIS)

    Affrida Abu Hassan; Zaiton Ahmad; Sakinah Ariffin; Oono, Yutaka; Hase, Yoshihiro; Shikazono; Naoya; Narumi, Issay; Tanaka, Atsushi

    2010-01-01

    Mutation induction using ionizing radiation provides an effective alternative means for improvement of orchids. In this study, ion beams were used because they have much higher linear energy transfer (LET) than X-rays or gamma rays, and subsequently lead to higher mutation frequency and broad mutation spectrum. The proto corm-like bodies (PLBs) of three orchid species (Dendrobium crumenatum, Dendrobium mirbellianum) were irradiated at various doses with 320 MeV 12 C 6+ ions accelerated by Azimuthally Varying Field (AVF) cyclotron at JAEAs Takasaki Ion Accelerators for Advanced Radiation Application (TIARA). The optimum irradiation condition and the effect of irradiation on each species were studied, particularly on flower colour and morphology, flowering habit and insect resistance. Dose effects on plantlet regeneration for each species were also obtained. Some morphological changes were observed in flowers of Dendrobium crumenatum, whilst one insect resistant mutant was obtained in Dendrobium mirbellianum. (author)

  15. Charge neutralization of small ion beam clumps

    Energy Technology Data Exchange (ETDEWEB)

    Welch, D R [Mission Research Corp., Albuquerque, NM (United States); Olson, C L; Hanson, D L [Sandia National Labs., Albuquerque, NM (United States)

    1997-12-31

    The mega-ampere currents associated with light ion fusion (LIF) require excellent charge neutralization to prevent divergence growth. As the size and space-charge potential of a beam clump or `beamlet` become small (submillimeter size and kilovolt potentials), the neutralization becomes increasingly difficult. Linear theory predicts that plasma electrons cannot neutralize potentials < {phi}{sub crit} = (1/2)m{sub e}v{sub i}{sup 2}/e, where m{sub e} is the electron mass and v{sub i} is the ion beam velocity. A non-uniform beam would, therefore, have regions with potentials sufficient to add divergence to beam clumps. The neutralization of small beamlets produced on the SABLE accelerator and in numerical simulation has supported the theory, showing a plateau in divergence growths as the potential in the beamlet exceeds {phi}{sub crit}. (author). 1 tab., 2 figs., 4 refs.

  16. The TMX heavy ion beam probe

    International Nuclear Information System (INIS)

    Hallock, G.A.

    1994-01-01

    A heavy ion beam probe has been used to measure the radial space potential distribution in the central cell of TMX. This was the first beam probe system to utilize computer control, CAMAC instrumentation, and fast time response for broadband fluctuation capabilities. The fast time response was obtained using off-line processing of the energy analyzer detector signals and wideband transimpedance amplifiers. The on-axis space potential was found to be 300--400 V, with φ e /T ec ∼8. The radial potential profile is parabolic when gas box fueling is used. The frequency of observed fluctuations was found to agree with the E x B plasma rotation frequency during the discharge. The measured Tl ++ secondary ion current level is consistent with calculations, given reasonable assumptions for beam attenuation

  17. Ion beam irradiation effects on aromatic polymers

    International Nuclear Information System (INIS)

    Shukushima, Satoshi; Ueno, Keiji

    1995-01-01

    We studied the optical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H + , H 2 + and He + ions. The examined aromatic polymers were polyetherether ketone(PEEK), polyetherimide(PEI), polyether sulfon(PES), polysulfon(PSF), and polyphenylene sulfide(PPS). The optical densities at 300nm of PES and PSF greatly increased after the irradiation. The optical densities at 400nm of all the examined polymer lineally increased with the irradiation dose. The PEEK film which had been irradiated with 1 MeV H + was not deformed above melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the aromatic polymers for the same absorption energy. (author)

  18. Target design for heavy ion beam fusion

    International Nuclear Information System (INIS)

    Meyer-ter-Vehn, J.; Metzler, N.

    1981-07-01

    Target design for Heavy Ion Beam Fusion and related physics are discussed. First, a modified version of the Kidder-Bodner model for pellet gain is presented and is used to define the working point (Esub(beam) = 4.8 MJ, Gain 83) for a reactor size target. Secondly, stopping of heavy ions in hot dense plasma is investigated and numerical results for stopping powers and ranges of 10 GeV Bi-ions in Pb, Li, and PbLi-alloy are given. Finally, results of an explicit implosion calculation, using the 1-D code MINIHY, are discussed in detail. The hydrodynamic efficiency is found to be about 5%. Special attention is given to the shock sequence leading to the ignition configuration. Also the growth of Rayleigh-Taylor instability at the absorber-pusher interface is estimated. (orig.)

  19. Probing surface magnetism with ion beams

    International Nuclear Information System (INIS)

    Winter, H.

    2007-01-01

    Ion beams can be used to probe magnetic properties of surfaces by a variety of different methods. Important features of these methods are related to trajectories of atomic projectiles scattered from the surface of a solid target and to the electronic interaction mechanisms in the surface region. Both items provide under specific conditions a high sensitivity for the detection of magnetic properties in the region at the topmost layer of surface atoms. This holds in particular for scattering under planar surface channeling conditions, where under grazing impact atoms or ions are reflected specularly from the surface without penetration into the subsurface region. Two different types of methods are employed based on the detection of the spin polarization of emitted or captured electrons and on spin blocking effects for capture into atomic terms. These techniques allow one to probe the long range and short range magnetic order in the surface region

  20. Surface generation of negative hydrogen ion beams

    International Nuclear Information System (INIS)

    Bommel, P.J.M. van.

    1984-01-01

    This thesis describes investigations on negative hydrogen ion sources at the ampere level. Formation of H - ions occurs when positive hydrogen ions capture two electrons at metal surfaces. The negative ionization probability of hydrogen at metal surfaces increases strongly with decreasing work function of the surface. The converters used in this study are covered with cesium. Usually there are 'surface plasma sources' in which the hydrogen source plasma interacts with a converter. In this thesis the author concentrates upon investigating a new concept that has converters outside the plasma. In this approach a positive hydrogen ion beam is extracted from the plasma and is subsequently reflected from a low work function converter surface. (Auth.)

  1. PIXE and ion beam analysis in forensics

    International Nuclear Information System (INIS)

    Bailey, Melanie; Warmenhoven, John; Chrislopher, Matt; Kirkby, Karen; Palitsin, Vladimir; Grime, Geoff; Jeynes, Chris; Jones, Brian; Wenn, Roger

    2013-01-01

    Full text: University of Surrey has, for the past four years, collaborated with police institutions from across Europe and the rest of the world lo scope potential applications of ion beam analysis (IBA) in forensic science. In doing this we have consulted practitioners across a range of forensic disciplines, and critically compared IBA with conventional characterisation techniques to investigate the areas in which IBA can add evidential value. In this talk, the results of this feasibility study will be presented, showing the types of sample for which IBA shows considerable promise. We will show how a combination of PIXE with other IBA techniques (EBS, PIGE, MeV-SIMS) can be used to give unprecedented characterisation of forensic samples and comment on the significance of these results for forensic casework. We will also show cases where IBA not appear to add any significant improvement over conventional techniques. (author)

  2. Current neutralization of converging ion beams

    International Nuclear Information System (INIS)

    Mosher, D.

    1978-01-01

    It is desired to consider the problem of current neutralization of heavy ion beams traversing gas backgrounds in which the conductivity changes due to beam heating and beam convergence. The procedure is to determine Green's-function solutions to the magnetic-diffusion equation derived from Maxwell's equations and an assumed scaler-plasma conductivity sigma for the background-electron current density j/sub e/. The present calculation is more general than some previously carried out in that arbitrary time variations for the beam current j/sub b/ and conductivity are allowed and the calculation is valid for both weak and strong neutralization. Results presented here must be combined with an appropriate energy-balance equation for the heated background in order to obtain the neutralization self-consistently

  3. Focused ion beam technology and ultimate applications

    International Nuclear Information System (INIS)

    Gierak, Jacques

    2009-01-01

    In this topical review, the potential of the focused ion beam (FIB) technology and ultimate applications are reviewed. After an introduction to the technology and to the operating principles of liquid metal ion sources (LMIS), of ion optics and instrument architectures, several applications are described and discussed. First, the application of FIB for microcircuit inspection, metrology and failure analysis is presented. Then, we introduce and illustrate some advanced patterning schemes we propose as next generation FIB processing examples. These patterning schemes are (i) local defect injection or smoothing in magnetic thin film direct patterning, (ii) functionalization of graphite substrates to guide organization of clusters, (iii) local and selective epitaxy of III–V semiconductor quantum dots and (iv) FIB patterned solid-state nanopores for biological molecules manipulation and analysis. We conclude this work by giving our vision of the future developments for FIB technology. (topical review)

  4. Proteome Changes in Maize Embryo (Zea mays L) Induced by Ion Beam Implantation Treatment

    Science.gov (United States)

    Li, Yongliang; Tang, Jihua; Qin, Guangyong; Huo, Yuping; Tian, Shuangqi

    2009-08-01

    Low energy ion beam implantation was applied to the maize (Zea mays L) embryo proteome using two-dimensional gel electrophoresis. Protein profile analysis detected more than 1100 protein spots, 72 of which were determined to be expressed differently in the treated and control (not exposed to ion beam implantation) embryos. Of the 72 protein spots, 53 were up-regulated in the control and 19 were more abundantly expressed in the ion beam-treated embryos. The spots of up- or down-regulated proteins were identified by matrix assisted laser desorption/ionization-time of flight mass spectrometry (MALDI-TOF-MS). Among the identified proteins, 11 were up-regulated in the treated embryos. Four of these up-regulated proteins were antioxidant molecules, three were related to stress response, two to sugar metabolism and two were associated with heat shock response. Of the five proteins up-regulated in the control embryos, three were functionally related to carbohydrate metabolism; the functions of the remaining two proteins were unknown. The data collected during this study indicate that treatment of maize embryos with low energy ion beam implantation induces changes in stress tolerance enzymes/proteins, possibly as a result of alterations in metabolism.

  5. Ion beam analysis and modern materials science

    International Nuclear Information System (INIS)

    Feldman, Leonard C.

    2012-01-01

    Full text: Modern research has provided the means of creating materials structures controlled at the atomic scale. Familiar examples include the formation of hetero-structures grown with atomic precision, nanostructures with designed electronic properties and new organic structures employing the richness of organic chemistry. The current forefront of such materials research includes the creation of new materials for energy and electronics applications. The electron transport properties of these diverse materials, and hence their performance, is invariably linked by the basic interactions at the interface. Interfaces are the critical component, and least understood aspect, of almost all such materials-based structures. Ion beam analysis, and its role in interfacial definition, will be described in the context of a number of such forefront projects underway at the Rutgers Institute for Advanced Materials, Devices and Nanotechnology (IAMDN). These include: 1) quantitative analysis of self-assembled monolayers on organic single crystals resulting in enhanced surface mobility and more effective organic field effect transistors, 2) monolayer scale interfacial analysis of complex oxide hetero-structures to elucidate the properties of the enhanced two-dimensional electron mobility and 3) characterization of the semiconductor- dielectric interface in the SiC/SiO2 system, with application for energy efficient power transmission. Despite extraordinary advances in synthesis, interface properties continue as an uncontrolled region of hetero-materials formation. Their understanding requires the detailed analysis of a complement of tools including ion beam analysis. Fellow Researchers: R. A. Bartynski, L.C.Feldman, E. Garfunkel, T. Gustafsson, H.D. Lee, D. Mastrogiovanni, V. Podzorov, L. S. Wielunski, J. R. Williams(Auburn), G. Liu, J. Williams, S. Dhar. (author)

  6. Wave Propagation in an Ion Beam-Plasma System

    DEFF Research Database (Denmark)

    Jensen, T. D.; Michelsen, Poul; Juul Rasmussen, Jens

    1979-01-01

    The spatial evolution of a velocity- or density-modulated ion beam is calculated for stable and unstable ion beam plasma systems, using the linearized Vlasov-Poisson equations. The propagation properties are found to be strongly dependent on the form of modulation. In the case of velocity...

  7. Development of a focused ion beam micromachining system

    Energy Technology Data Exchange (ETDEWEB)

    Pellerin, J.G.; Griffis, D.; Russell, P.E.

    1988-12-01

    Focused ion beams are currently being investigated for many submicron fabrication and analytical purposes. An FIB micromachining system consisting of a UHV vacuum system, a liquid metal ion gun, and a control and data acquisition computer has been constructed. This system is being used to develop nanofabrication and nanomachining techniques involving focused ion beams and scanning tunneling microscopes.

  8. MEV Energy Electrostatic Accelerator Ion Beam Emittance Measurement

    OpenAIRE

    I.G. Ignat’ev; M.I. Zakharets; S.V. Kolinko; D.P. Shulha

    2014-01-01

    The testing equipment was designed, manufactured and tried out permitting measurements of total current, current profile and emittance of an ion beam extracted from the ion beam. MeV energy electrostatic accelerator ion H + beam emittance measurement results are presented.

  9. ECR ion source based low energy ion beam facility

    Indian Academy of Sciences (India)

    Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion ...

  10. Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

    International Nuclear Information System (INIS)

    Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.

    2007-01-01

    Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density

  11. Development of focused ion beam systems with various ion species

    International Nuclear Information System (INIS)

    Ji Qing; Leung, K.-N.; King, Tsu-Jae; Jiang Ximan; Appleton, Bill R.

    2005-01-01

    Conventional focused ion beam systems employ a liquid-metal ion source (LMIS) to generate high-brightness beams, such as Ga + beams. Recently there has been an increased need for focused ion beams in areas like biological studies, advanced magnetic-film manufacturing and secondary-ion mass spectroscopy (SIMS). In this article, status of development on focused ion beam systems with ion species such as O 2 + , P + , and B + will be reviewed. Compact columns for forming focused ion beams from low energy (∼3keV), to intermediate energy (∼35keV) are discussed. By using focused ion beams, a SOI MOSFET is fabricated entirely without any masks or resist

  12. Electrostatic force assisted deposition of graphene

    Science.gov (United States)

    Liang, Xiaogan [Berkeley, CA

    2011-11-15

    An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

  13. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

    International Nuclear Information System (INIS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-01-01

    Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  14. Study and use of the ion beams formed in the Focus experiment

    International Nuclear Information System (INIS)

    Bernard, A.; Garconnet, J.P.; Jolas, A.; le Breton, J.P.; de Mascureau, J.

    1983-03-01

    Studies were performed in the 200 kJ Actime installation using CD 2 or LiD targets and permitted one to determine the characteristics of the ion beam which bombards the target. The measurement of the temperature attained by metal targets bombarded by deuterons is discussed. The use of a digital program permits one to calculate the amount of energy deposited. Finally, the improvements being considered and the future prospects offered by this type of experiment are discussed

  15. A Study on the Ion Beam Extraction using Duo-PiGatron Ion source for Vertical Type Ion Beam Facility

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bom Sok; Lee, Chan young; Lee, Jae Sang [KAERI, Daejeon (Korea, Republic of)

    2015-05-15

    In Korea Multipurpose Accelerator Complex (KOMAC), we have started ion beam service in the new beam utilization building since March this year. For various ion beam irradiation services, we are developed implanters such as metal (150keV/1mA), gaseous (200keV/5mA) and high current ion beam facility (20keV/150mA). One of the new one is a vertical type ion beam facility without acceleration tube (60keV/20mA) which is easy to install the sample. After the installation is complete, it is where you are studying the optimal ion beam extraction process. Detailed experimental results will be presented. Vertical Type Ion Beam Facility without acceleration tube of 60keV 20mA class was installed. We successfully extracted 60keV 20mA using Duo- PiGatron Ion source for Vertical Type Ion Beam Facility. Use the BPM and Faraday-cup, is being studied the optimum conditions of ion beam extraction.

  16. Important atomic physics issues for ion beam fusion

    International Nuclear Information System (INIS)

    Bangerter, Roger.

    1986-01-01

    The nearly endless variety of interesting and challenging problems makes physics research enjoyable. Most of us would choose to be physicists even if physics had no practical applications. However, physics does have practical applications. This workshop deals with one of those applications, namely ion beam fusion. Not all interesting and challenging atomic physics questions are important for ion beam fusion. This paper suggests some questions that may be important for ion beam fusion. It also suggests some criteria for determining if a question is only interesting, or both interesting and important. Importance is time dependent and, because of some restrictions on the flow of information, also country dependent. In the early days of ion beam fusion, it was important to determine if ion beam fusion made sense. Approximate answers and bounds on various parameters were required. Accurate, detailed answers were not needed. Because of the efforts of many people attending this workshop, we now know that ion beam fusion does make some sense. We must still determine if ion beam fusion truly makes good sense. If it does make good sense, we must determine how to make it work. Accurate detailed answers are becoming increasingly important. (author)

  17. Ion beam characterisation of nanometre structures

    Energy Technology Data Exchange (ETDEWEB)

    Persson, Leif

    1995-08-01

    Ion beam analysis methods have been applied to the study of technologically important issues in III-V nanometre structure science. In the first application, the incorporation of hydrogen in GaAs during electron cyclotron resonance etching was studied using the {sup 1}H({sup 15}N,{alpha}{gamma}){sup 12}C reaction analysis method. The major part of the work was carried out using mass and energy dispersive Recoil Spectrometry (RS). RS was used to study reactions of thin metal films InP reactions. The metals investigated include Cr, Ti, Ni, Pd and Pt and the reactions as a function of temperature were studied to elucidate suitable compounds for contacts and metallization. Using {sup 127}I in the 0.5A to 0.7A MeV region as the projectile, the depth profiles for the different elements were obtained. Complementary measurements with X-ray diffraction to obtain chemical phase information as well as scanning electron microscopy to study the surface morphology were also carried out. 59 refs, 15 figs.

  18. A radioactive ion beam facility using photofission

    CERN Document Server

    Diamond, W T

    1999-01-01

    Use of a high-power electron linac as the driver accelerator for a Radioactive Ion Beam (RIB) facility is proposed. An electron beam of 30 MeV and 100 kW can produce nearly 5x10 sup 1 sup 3 fissions/s from an optimized sup 2 sup 3 sup 5 U target and about 60% of this from a natural uranium target. An electron beam can be readily transmitted through a thin window at the exit of the accelerator vacuum system and transported a short distance through air to a water-cooled Bremsstrahlung-production target. The Bremsstrahlung radiation can, in turn, be transported through air to the isotope-production target. This separates the accelerator vacuum system, the Bremsstrahlung target and the isotope-production target, reducing remote handling problems. The electron beam can be scanned over a large target area to reduce the power density on both the Bremsstrahlung and isotope-production targets. These features address one of the most pressing technological challenges of a high-power RIB facility, namely the production o...

  19. Ion beam characterisation of nanometre structures

    International Nuclear Information System (INIS)

    Persson, Leif.

    1995-08-01

    Ion beam analysis methods have been applied to the study of technologically important issues in III-V nanometre structure science. In the first application, the incorporation of hydrogen in GaAs during electron cyclotron resonance etching was studied using the 1 H( 15 N,αγ) 12 C reaction analysis method. The major part of the work was carried out using mass and energy dispersive Recoil Spectrometry (RS). RS was used to study reactions of thin metal films InP reactions. The metals investigated include Cr, Ti, Ni, Pd and Pt and the reactions as a function of temperature were studied to elucidate suitable compounds for contacts and metallization. Using 127 I in the 0.5A to 0.7A MeV region as the projectile, the depth profiles for the different elements were obtained. Complementary measurements with X-ray diffraction to obtain chemical phase information as well as scanning electron microscopy to study the surface morphology were also carried out. 59 refs, 15 figs

  20. Materials processing with intense pulsed ion beams

    International Nuclear Information System (INIS)

    Rej, D.J.; Davis, H.A.; Olson, J.C.

    1996-01-01

    We review research investigating the application of intense pulsed ion beams (IPIBs) for the surface treatment and coating of materials. The short range (0.1-10 μm) and high-energy density (1-50 J/cm 2 ) of these short-pulsed (≤ 1 μs) beams (with ion currents I = 5 - 50 kA, and energies E = 100 - 1000 keV) make them ideal to flash-heat a target surface, similar to the more familiar pulsed laser processes. IPIB surface treatment induces rapid melt and solidification at up to 10 10 K/s to cause amorphous layer formation and the production of non-equilibrium microstructures. At higher energy density the target surface is vaporized, and the ablated vapor is condensed as coatings onto adjacent substrates or as nanophase powders. Progress towards the development of robust, high-repetition rate IPIB accelerators is presented along with economic estimates for the cost of ownership of this technology

  1. Intense ion beams for inertial confinement fusion

    International Nuclear Information System (INIS)

    Mehlhorn, T.A.

    1997-01-01

    Intense beams of light of heavy ions are being studied as inertial confinement fusion (ICF) drivers for high yield and energy. Heavy and light ions have common interests in beam transport, targets, and alternative accelerators. Self-pinched transport is being jointly studied. This article reviews the development of intense ion beams for ICF. Light-ion drivers are highlighted because they are compact, modular, efficient and low cost. Issues facing light ions are: (1) decreasing beam divergence; (2) increasing beam brightness; and (3) demonstrating self-pinched transport. Applied-B ion diodes are favored because of efficiency, beam brightness, perceived scalability, achievable focal intensity, and multistage capability. A light-ion concept addressing these issues uses: (1) an injector divergence of ≤ 24 mrad at 9 MeV; (2) two-stage acceleration to reduce divergence to ≤ 12 mrad at 35 MeV; and (3) self-pinched transport accepting divergences up to 12 mrad. Substantial progress in ion-driven target physics and repetitive ion diode technology is also presented. Z-pinch drivers are being pursued as the shortest pulsed power path to target physics experiments and high-yield fusion. However, light ions remain the pulsed power ICF driver of choice for high-yield fusion energy applications that require driver standoff and repetitive operation. 100 refs

  2. The production of accelerated radioactive ion beams

    International Nuclear Information System (INIS)

    Olsen, D.K.

    1993-01-01

    During the last few years, substantial work has been done and interest developed in the scientific opportunities available with accelerated radioactive ion beams (RIBs) for nuclear physics, astrophysics, and applied research. This interest has led to the construction, development, and proposed development of both first- and second-generation RIB facilities in Asia, North America, and Europe; international conferences on RIBs at Berkeley and Louvain-la-Neuve; and many workshops on specific aspects of RIB production and science. This paper provides a discussion of both the projectile fragmentation, PF, and isotope separator on-line, ISOL, approach to RIB production with particular emphasis on the latter approach, which employs a postaccelerator and is most suitable for nuclear structure physics. The existing, under construction, and proposed facilities worldwide are discussed. The paper draws heavily from the CERN ISOLDE work, the North American IsoSpin Laboratory (ISL) study, and the operating first-generation RIB facility at Louvain-la-Neuve, and the first-generation RIB project currently being constructed at ORNL

  3. Inertial fusion with heavy ion beams

    International Nuclear Information System (INIS)

    Bock, R.; Hofmann, I.; Arnold, R.

    1984-01-01

    The underlying principle of inertial confinement is the irradiation of a small pellet filled with DT-fuel by laser or particle beams in order to compress the fuel and ignite it. As 'drivers' for this process large laser installations and light-ion devices have been built since then and the results obtained during the past few years have increased our confidence, that the ignition conditions might be reached. Further conditions, however, have to be fulfilled for operating a power plant. In particular, the driver needs to have enough efficiency to be economical, and for a continuous energy production a high repetition rate and availability is required. It is less than ten years since it was realized that heavy ion beams might be a promising candidate for achieving inertial confinement fusion (ICF). Due to the evolution of high-energy and heavy-ion physics during the past 25 years, accelerators have attained a high technical and technological standard and an excellent operational reliability. Nevertheless, the heavy ion driver for a fusion power plant requires beam specifications exceeding those of existing accelerators considerably. (Auth.)

  4. Basic aspects of ion beam mixing

    International Nuclear Information System (INIS)

    Averback, R.S.

    1985-07-01

    Irradiation of solids with energetic particles results in the reorganization of constituent target atoms, i.e., ion beam mixing (IM). At low temperatures, IM is characterized by prompt (10 -10 s) diffusion processes which are localized in the vicinity of the displacement cascade. Mixing at low temperatures can cause the system to depart far from the equilibrium state. At elevated temperatures, the diffusion of radiation-induced defects extends the mixing to longer times and greater distances. These delayed IM processes tend to return the system toward equilibrium. Recent experimental progress has led to a qualitative understanding of the fundamental aspects of IM in both temperature regimes. This has been achieved through systematic measurements of the influences of temperature, dose, dose-rate, cascade energy density, and chemical interactions on IM. The results of these experiments will be reviewed and compared to IM models based on collisional, thermal spike, and radiation-enhanced diffusion processes. The relation of IM to other fundamental radiation damage effects will also be discussed. 75 refs., 8 figs., 2 tabs

  5. Detection systems for radioactive ion beams

    International Nuclear Information System (INIS)

    Savajols, H.

    2002-01-01

    Two main methods are used to produce radioactive ion beams: -) the ISOL method (isotope separation on-line) in which the stable beam interacts with a thick target, the reaction products diffuse outside the target and are transferred to a source where they are ionized, a mass separator and a post-accelerator drive the selected radioactive ions to the right energy; -) the in-flight fragmentation method in which the stable beam interacts with a thin target, the reaction products are emitted from the target with a restricted angular distribution and a velocity close to that of the incident beam, the experimenter has to take advantage from the reaction kinetics to get the right particle beam. Characteristic time is far longer with the ISOL method but the beam intensity is much better because of the use of a post-accelerator. In both cases, the beam intensity is lower by several orders of magnitude than in the case of a stable beam. This article presents all the constraints imposed by radioactive beams to the detection systems of the reaction products and gives new technical solutions according to the type of nuclear reaction studied. (A.C.)

  6. Can one crystallize a heavy ion beam?

    International Nuclear Information System (INIS)

    Hasse, R.W.

    1990-05-01

    We study the possibility of obtaining liquid or crystalline ordered structures in a cooled heavy ion beam in a storage ring. First the structure of very cold ions confined in a cylindrically symmetric static potential is explored by means of molecular dynamics calculations. Liquid like structures are obtained for the ratio of average Coulomb to thermal energies and Γ ≅ 10 and crystalline structures like strings, zigzags, helices, tetrehedra, intertwined helices, polygons, etc. emerge for Γ > 25. For larger densities, the particles arrange in cylindrical shells and form equilateral triangles on their surfaces arranged in hexagons which are characteristic of two-dimensional Coulomb solids. The molecular dynamics results are compared to results of energy minimization of these structures or of geometrical models. Realistic molecular dynamics calculations in the lattice of the Experimental Storage Ring at GSI Darmstadt including the effects of the bending, focussing and defocussing magnets, of the free sections and of the electron cooler revealed that such structures at higher densities are easily destroyed by heating through shearing forces. Therefore the dynamics of the simple Coulomb string is explored in more detail. The potential energy for large amplitude longitudinal and transverse vibrations is calculated and the dispersion relations and response functions in the harmonic limit are given and possible excitation mechanisms are discussed. (orig.)

  7. Modified betatron for ion beam fusion

    International Nuclear Information System (INIS)

    Rostoker, N.; Fisher, A.

    1986-01-01

    An intense neutralized ion beam can be injected and trapped in magnetic mirror or tokamak geometry. The details of the process involve beam polarization so that the beam crosses the fringing fields without deflection and draining the polarization when the beam reaches the plasma. Equilibrium requires that a large betatron field be added in tokamak geometry. In mirror geometry a toroidal field must be added by means of a current along the mirror axis. In either case, the geometry becomes that of the modified betatron which has been studied experimentally and theoretically in recent years. We consider beams of d and t ions with a mean energy of 500 kev and a temperature of about 50 kev. The plasma may be a proton plasma with cold ions. It is only necessary for beam trapping or to carry currents. The ion energy for slowing down is initially 500 kev and thermonuclear reactions depend only on the beam temperature of 50 kev which changes very slowly. This new configuration for magnetic confinement fusion leads to an energy gain of 10--20 for d-t reactions whereas previous studies of beam target interaction predicted a maximum energy gain of 3--4. The high beam energy available with pulsed ion diode technology is also essential for advanced fuels. 16 refs., 3 figs

  8. BEARS: Radioactive ion beams at LBNL

    International Nuclear Information System (INIS)

    Powell, J.; Guo, F.Q.; Haustein, P.E.

    1998-01-01

    BEARS (Berkeley Experiments with Accelerated Radioactive Species) is an initiative to develop a radioactive ion-beam capability at Lawrence Berkeley National Laboratory. The aim is to produce isotopes at an existing medical cyclotron and to accelerate them at the 88 inch Cyclotron. To overcome the 300-meter physical separation of these two accelerators, a carrier-gas transport system will be used. At the terminus of the capillary, the carrier gas will be separated and the isotopes will be injected into the 88 inch Cyclotron's Electron Cyclotron Resonance (ECR) ion source. The first radioactive beams to be developed will include 20-min 11 C and 70-sec 14 O, produced by (p,n) and (p,α) reactions on low-Z targets. A test program is currently being conducted at the 88 inch Cyclotron to develop the parts of the BEARS system. Preliminary results of these tests lead to projections of initial 11 C beams of up to 2.5 x 10 7 ions/sec and 14 O beams of 3 x 10 5 ions/sec

  9. Edge effect correction using ion beam figuring.

    Science.gov (United States)

    Yang, Bing; Xie, Xuhui; Li, Furen; Zhou, Lin

    2017-11-10

    The edge effect is regarded as one of the most difficult technical issues for fabricating large primary mirrors, as it can greatly reduce the key performance of the optical system. Ion beam figuring (IBF) has the advantage of no edge effect, so we can use it to remove high points on the edge and improve surface accuracy. The edge local correction method (ELCM) of IBF processes only the surface edge zone, and is very different from the current full caliber figuring method (FCFM). Therefore, it is necessary to study the ELCM of IBF. In this paper, the key factors of ELCM are analyzed, such as dwell time algorithm, edge data extension methods, and the outward dimension of the starting figuring point. At the same time, the distinctions between ELCM and FCFM are compared. Finally, a 142 mm diameter fused silica mirror is fabricated to verify the validity of the theoretical of ELCM. The experimental results indicate that the figuring precision and efficiency can be obviously improved by ELCM.

  10. Simulations of multistage intense ion beam acceleration

    International Nuclear Information System (INIS)

    Slutz, S.A.; Poukey, J.W.

    1992-01-01

    An analytic theory for magnetically insulated, multistage acceleration of high intensity ion beams, where the diamagnetic effect due to electron flow is important, has been presented by Slutz and Desjarlais. The theory predicts the existence of two limiting voltages called V 1 (W) and V 2 (W), which are both functions of the injection energy qW of ions entering the accelerating gap. As the voltage approaches V 1 (W), unlimited beam-current density can penetrate the gap without the formation of a virtual anode because the dynamic gap goes to zero. Unlimited beam current density can penetrate an accelerating gap above V 2 (W), although a virtual anode is formed. It was found that the behavior of these limiting voltages is strongly dependent on the electron density profile. The authors have investigated the behavior of these limiting voltages numerically using the 2-D particle-in-cell (PIC) code MAGIC. Results of these simulations are consistent with the superinsulated analytic results. This is not surprising, since the ignored coordinate eliminates instabilities known to be important from studies of single stage magnetically insulated ion diodes. To investigate the effect of these instabilities the authors have simulated the problem with the 3-D PIC code QUICKSILVER, which indicates behavior that is consistent with the saturated model

  11. Development and application of ion beam diagnostics

    International Nuclear Information System (INIS)

    Pfister, Jochen

    2010-01-01

    At GSI - Helmholtz Centre for Heavy Ion Research in Darmstadt/Germany the HITRAP project is in the commissioning phase. This world-wide unique facility consists of a linear decelerator for heavy, highly charged ions including atomic physics precision experiments. During commissioning of the cavities, transverse emittances were measured using the single-shot pepperpot method as well as the multi-gradient method. The extraction emittance of the experimental storage ring (ESR) was determined. Furthermore, the phase space distribution of an decelerated beam at an intermediate energy of 500keV/u was measured behind the IH-structure. New algorithms have been integrated into the analysis of digital images. The longitudinal bunch structure measurements of the ion beam at the entry point into the decelerator and the operation of the Double-drift Buncher is shown. The design, development and the first commissioning of a new single-shot pepperpot emittance meter for very low beam currents and beam energies in the order of some hundred nA is described, making it possible to measure the beam behind the deceleration cavities. In addition, transverse beam dynamics calculations were performed, which supported the hands-on commissioning of the accelerator. It is described how the entire beam line from the ESR to the radio-frequency quadrupole can be optimized using the new routine for transverse effects of the bunching and deceleration, which was successfully integrated into the software COSY Infinity. (orig.)

  12. Energy spread in ion beam analysis

    International Nuclear Information System (INIS)

    Szilagyi, E.

    2000-01-01

    In ion beam analysis (IBA) the depth profiles are extracted from the experimentally determined energy profiles. The spectra, however, are subject to finite energy resolution of both extrinsic and intrinsic origin. Calculation of those effects such as instrumental beam, geometry and detection-related energy and angular spreads as well as energy straggling, multiple scattering and Doppler effects in the sample itself is not trivial, especially since it involves treatment of non-independent random processes. A proper account for energy spread is vital in IBA not only for correct extraction of elemental and isotopic depth profiles from the measured spectra, but already prior to data acquisition, in optimising experimental conditions to reach the required depth resolution at a certain depth. After a short review of the literature on the different energy spread contributions experimental examples are given from resonance, RBS, elastic BS and ERDA practice in which an account for energy spread contributions is essential. Some further examples illustrate extraction of structural information (roughness, pore size, etc.) from elaborated depth resolution calculation for such layer structures

  13. Energy spread in ion beam analysis

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, E. E-mail: szilagyi@rmki.kkfki.hu

    2000-03-01

    In ion beam analysis (IBA) the depth profiles are extracted from the experimentally determined energy profiles. The spectra, however, are subject to finite energy resolution of both extrinsic and intrinsic origin. Calculation of those effects such as instrumental beam, geometry and detection-related energy and angular spreads as well as energy straggling, multiple scattering and Doppler effects in the sample itself is not trivial, especially since it involves treatment of non-independent random processes. A proper account for energy spread is vital in IBA not only for correct extraction of elemental and isotopic depth profiles from the measured spectra, but already prior to data acquisition, in optimising experimental conditions to reach the required depth resolution at a certain depth. After a short review of the literature on the different energy spread contributions experimental examples are given from resonance, RBS, elastic BS and ERDA practice in which an account for energy spread contributions is essential. Some further examples illustrate extraction of structural information (roughness, pore size, etc.) from elaborated depth resolution calculation for such layer structures.

  14. Conical pinched electron beam diode for intense ion beam source

    International Nuclear Information System (INIS)

    Matsukawa, Yoshinobu; Nakagawa, Yoshiro

    1982-01-01

    For the purpose of improvement of the pinched electron beam diode, the production of an ion beam by a diode with electrodes in a conical shape was studied at low voltage operation (--200 kV). The ion beam is emitted from a small region of the diode apex. The mean ion beam current density near the axis at 12 cm from the diode apex is two or three times that from an usual flat parallel diode with the same dimension and impedance. The brightness and the power brightness at the otigin are 450 MA/cm 2 sr and 0.12 TW/cm 2 sr respectively. (author)

  15. Biological effect of penetration controlled irradiation with ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi; Shimizu, Takashi; Kikuchi, Masahiro; Kobayashi, Yasuhiko; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Yamashita, Takao

    1997-03-01

    To investigate the effect of local irradiation with ion beams on biological systems, technique for penetration controlled irradiation has been established. The range in a target was controlled by changing the distance from beam window in the atmosphere, and could be controlled linearly up to about 31 {mu}m in biological material. In addition, the effects of the penetration controlled irradiations with 1.5 MeV/u C and He ions were examined using tobacco pollen. The increased frequency of leaky pollen produced by ion beams suggests that the efficient pollen envelope damages would be induced at the range-end of ion beams. (author)

  16. Underling modification in ion beam induced Si wafers

    International Nuclear Information System (INIS)

    Hazra, S.; Chini, T.K.; Sanyal, M.K.; Grenzer, J.; Pietsch, U.

    2005-01-01

    Subsurface (amorphous-crystalline interface) structure of keV ion beam modified Si(001) wafers was studied for the first time using non-destructive technique and compared with that of the top one. Ion-beam modifications of the Si samples were done using state-of-art high-current ion implanter facility at Saha Institute of Nuclear Physics by changing energy, dose and angle of incidence of the Ar + ion beam. To bring out the underlying modification depth-resolved x-ray grazing incidence diffraction has been carried out using synchrotron radiation facility, while the structure of the top surface was studied through atomic force microscopy

  17. Electron temperature effects for an ion beam source

    International Nuclear Information System (INIS)

    Uramoto, Joshin.

    1979-05-01

    A hydrogen high temperature plasma up to 200 eV is produced by acceleration of electrons in a hot hollow cathode discharge and is used as an ion beam source. Then, two characteristics are observed: A rate of the atomic ion (H + ) number increases above 70%. A perveance of the ion beam increases above 30 times compared with that of a cold plasma, while a floating potential of an ion acceleration electrode approaches an ion acceleration potential (- 500 V) according as an increment of the electron temperature. Moreover, a neutralized ion beam can be produced by only the negative floating electrode without an external power supply. (author)

  18. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    International Nuclear Information System (INIS)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R.M.

    2015-01-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence

  19. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

    2015-05-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  20. Systematic investigations of low energy Ar ion beam sputtering of Si and Ag

    Energy Technology Data Exchange (ETDEWEB)

    Feder, R., E-mail: rene.feder@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany); Frost, F.; Neumann, H.; Bundesmann, C.; Rauschenbach, B. [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany)

    2013-12-15

    Ion beam sputter deposition (IBD) delivers some intrinsic features influencing the growing film properties, because ion properties and geometrical process conditions generate different energy and spatial distributions of the sputtered and scattered particles. Even though IBD has been used for decades, the full capabilities are not investigated systematically and specifically used yet. Therefore, a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the generated secondary particles and backscattered ions and the deposited films needs to be done. A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (ion incidence angle, position of substrates and analytics in respect to the target) and of ion beam parameters (ion species, ion energy) to perform a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties as hypothesized before. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known Transport and Range of Ions in Matter, Sputtering version (TRIM.SP) code [J.P. Biersack, W. Eckstein, Appl. Phys. A: Mater. Sci. Process. 34 (1984) 73]. The thicknesses of the films are in good agreement with those calculated from simulated particle fluxes. For the positions of the

  1. Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

    International Nuclear Information System (INIS)

    Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

    2001-01-01

    This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition

  2. Ion beam surface treatment: A new capability for rapid melt and resolidification of surfaces

    International Nuclear Information System (INIS)

    Stinnett, R.W.; McIntyre, D.C.; Buchheit, R.G.; Greenly, J.B.; Thompson, M.O.

    1994-01-01

    The emerging capability to produce high average power (5--250 kW) pulsed ion beams at 0.2--2 MeV energies is enabling us to develop a new, commercial-scale thermal surface treatment technology called Ion Beam Surface Treatment (IBEST). This technique uses high energy, pulsed (≤100 ns) ion beams to directly deposit energy in the top 2--20 micrometers of the surface of any material. Depth of treatment is controllable by varying the ion energy and species. Deposition of the energy with short pulses in a thin surface layer allows melting of the layer with relatively small energies and allows rapid cooling of the melted layer by thermal diffusion into the underlying substrate. Typical cooling rates of this process (10 9 10 10 K/sec) cause rapid resolidification, resulting in production of non-equilibrium microstructures (nano-crystalline and metastable phases) that have significantly improved corrosion, wear, and hardness properties. We have conducted IBEST feasibility experiments with results confirming surface hardening, nanocrystaline grain formation, metal surface polishing, controlled melt of ceramic surfaces, and surface cleaning

  3. Characterization of diamond thin films deposited by a CO{sub 2} laser-assisted combustion-flame method

    Energy Technology Data Exchange (ETDEWEB)

    McKindra, Travis, E-mail: mckindra@mst.edu [Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); O' Keefe, Matthew J. [Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); Xie Zhiqiang; Lu Yongfeng [Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States)

    2010-06-15

    Diamond thin films were deposited by a CO{sub 2} laser-assisted O{sub 2}/C{sub 2}H{sub 2}/C{sub 2}H{sub 4} combustion-flame process. The effect of the deposition parameters, in particular the laser wavelength and power, on the film surface morphology, microstructure and phases present was the primary focus of the work. The laser power was set at 100, 400 and 800 W while the wavelength was varied and set at 10.591 {mu}m in the untuned condition and set at 10.532 {mu}m to resonantly match the CH{sub 2}-wagging vibrational mode of the C{sub 2}H{sub 4} molecule when in the tuned condition. When the laser was coupled to the combustion flame during deposition the diamond film growth was enhanced as the lateral grain size increased from 1 {mu}m to greater than 5 {mu}m. The greatest increase in grain size occurred when the wavelength was in the tuned condition. Scanning transmission electron microscopy images from focused-ion beam cross-sectioned samples revealed a sub-layer of smaller grains less than 1 {mu}m in size near the substrate surface at the lower laser powers and untuned wavelength. X-ray diffraction results showed a more intense Diamond (111) peak as the laser power increased from 100 to 800 W for the films deposited with the tuned laser wavelength. Micro-Raman spectra showed a diamond peak nearly twice as intense from the films with the tuned laser wavelength.

  4. Measurement of secondary particle production induced by particle therapy ion beams impinging on a PMMA target

    Directory of Open Access Journals (Sweden)

    Toppi M.

    2016-01-01

    Full Text Available Particle therapy is a technique that uses accelerated charged ions for cancer treatment and combines a high irradiation precision with a high biological effectiveness in killing tumor cells [1]. Informations about the secondary particles emitted in the interaction of an ion beam with the patient during a treatment can be of great interest in order to monitor the dose deposition. For this purpose an experiment at the HIT (Heidelberg Ion-Beam Therapy Center beam facility has been performed in order to measure fluxes and emission profiles of secondary particles produced in the interaction of therapeutic beams with a PMMA target. In this contribution some preliminary results about the emission profiles and the energy spectra of the detected secondaries will be presented.

  5. Prospects of ion implantation and ion beam mixing for corrosion protection

    International Nuclear Information System (INIS)

    Wolf, G.K.; Munn, P.; Ensinger, W.

    1985-01-01

    Ion implantation is very useful new low temperature treatment for improving the mechanical surface properties of materials without any dimensional changes. In addition also the corrosion properties of metals can be modified considerably by this technique. The long term corrosion behaviour of implanted metals, however, has been studied only for a very limited number of cases. In this contribution a survey of attempts to do this will be presented. As examples of promising systems for corrosion protection by ion beams iron, steel and titanium were examined with and without pretreatment by ion implantation and ion beam mixing. The corrosion rates of the systems have been obtained by neutron activation analysis and by electrochemical methods. Experimental results are presented on: Palladium implanted in titanium - crevice corrosion in salt solution; Palladium implanted in and deposited on titanium -corrosion in sulfuric acid; Platinum implanted in stainless steel -corrosion in sulfuric acid. (author)

  6. Application of laser assisted cold spraying process for metal deposition

    CSIR Research Space (South Africa)

    Tlotleng, Monnamme

    2014-02-01

    Full Text Available Laser assisted cold spraying (LACS) process is a hybrid technique that uses laser and cold spray to deposit solid powders on metal substrates. For bonding to occur, the particle velocities must be supersonic which are achieved by entraining...

  7. Effect of ion beam irradiation on metal particle doped polymer ...

    Indian Academy of Sciences (India)

    and converts polymeric structure into hydrogen depleted carbon network. ... Composite materials; ion beam irradiation; dielectric properties; X-ray diffraction. ..... Coat. Technol. 201 8225. Raja V, Sharma A K and Narasimha V V R 2004 Mater.

  8. Modeling and computer simulation of ion beam synthesis of nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Strobel, M.

    1999-11-01

    The following topics were dealt with: ion beam synthesis of nanoclusters, kinetic three dimensional lattice Monte Carlo method, Ostwald ripening, redistribution of implanted impurities, buried layer formation, comparisation to experimental results.

  9. Nanoscale insights into ion-beam cancer therapy

    CERN Document Server

    2017-01-01

    This book provides a unique and comprehensive overview of state-of-the-art understanding of the molecular and nano-scale processes that play significant roles in ion-beam cancer therapy. It covers experimental design and methodology, and reviews the theoretical understanding of the processes involved. It offers the reader an opportunity to learn from a coherent approach about the physics, chemistry and biology relevant to ion-beam cancer therapy, a growing field of important medical application worldwide. The book describes phenomena occurring on different time and energy scales relevant to the radiation damage of biological targets and ion-beam cancer therapy from the molecular (nano) scale up to the macroscopic level. It illustrates how ion-beam therapy offers the possibility of excellent dose localization for treatment of malignant tumours, minimizing radiation damage in normal tissue whilst maximizing cell-killing within the tumour, offering a significant development in cancer therapy. The full potential ...

  10. Fusion at counterstreaming ion beams - ion optic fusion (IOF)

    International Nuclear Information System (INIS)

    Gryzinski, M.

    1981-01-01

    The results of investigation are briefly reviewed in the field of ion optic fusion performed at the Institute of Nuclear Research in Swierk. The ion optic fusion concept is based on the possibility of obtaining fusion energy at highly ordered motion of ions in counterstreaming ion beams. For this purpose TW ion beams must be produced and focused. To produce dense and charge-neutralized ion beams the selective conductivity and ballistic focusing ideas were formulated and used in a series of RPI devices with low-pressure cylindrical discharge between grid-type electrodes. 100 kA, 30 keV deuteron beams were successfully produced and focused into the volume of 1 cm 3 , yielding 10 9 neutrons per 200 ns shot on a heavy ice target. Cylindrically convergent ion beams with magnetic anti-defocusing were proposed in order to reach a positive energy gain at reasonable energy level. (J.U.)

  11. Ion-beam modification of properties of metals and alloys

    International Nuclear Information System (INIS)

    Khodasevich, V.V.; Uglov, V.V.; Ponaryadov, V.V.; Zhukova, S.I.

    2002-01-01

    Physical fundaments for ion-beam modification and plasma-vacuum synthesis of new types of coatings and compounds in technically important metals and alloys were development as well as corresponding installation and technologies were created. (authors)

  12. Use of energetic ion beams in materials synthesis and processing

    International Nuclear Information System (INIS)

    Appleton, B.R.

    1992-01-01

    A brief review of the use energetic ion beams and related techniques for the synthesis, processing, and characterization of materials is presented. Selected opportunity areas are emphasized with examples, and references are provided for more extensive coverage. (author)

  13. Status of radioactive ion beams at the HRIBF

    CERN Document Server

    Stracener, D W

    2003-01-01

    Radioactive Ion Beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF) are produced using the isotope separation on-line technique and are subsequently accelerated up to a few MeV per nucleon for use in nuclear physics experiments. The first RIB experiments at the HRIBF were completed at the end of 1998 using sup 1 sup 7 F beams. Since then other proton-rich ion beams have been developed and a large number of neutron-rich ion beams are now available. The neutron-rich radioactive nuclei are produced via proton-induced fission of uranium in a low-density matrix of uranium carbide. Recently developed RIBs include sup 2 sup 5 Al from a silicon carbide target and isobarically pure beams of neutron-rich Ge, Sn, Br and I isotopes from a uranium carbide target.

  14. Development of the Holifield Radioactive Ion Beam Facility

    International Nuclear Information System (INIS)

    Tatum, B.A.

    1997-01-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) construction project has been completed and the first radioactive ion beam has been successfully accelerated. The project, which began in 1992, has involved numerous facility modifications. The Oak Ridge Isochronous Cyclotron has been converted from an energy booster for heavy ion beams to a light ion accelerator with internal ion source. A target-ion source and mass analysis system have been commissioned as key components of the facility's radioactive ion beam injector to the 25MV tandem electrostatic accelerator. Beam transport lines have been completed, and new diagnostics for very low intensity beams have been developed. Work continues on a unified control system. Development of research quality radioactive beams for the nuclear structure and nuclear astrophysics communities continues. This paper details facility development to date

  15. Simulating discrete models of pattern formation by ion beam sputtering

    International Nuclear Information System (INIS)

    Hartmann, Alexander K; Kree, Reiner; Yasseri, Taha

    2009-01-01

    A class of simple, (2+1)-dimensional, discrete models is reviewed, which allow us to study the evolution of surface patterns on solid substrates during ion beam sputtering (IBS). The models are based on the same assumptions about the erosion process as the existing continuum theories. Several distinct physical mechanisms of surface diffusion are added, which allow us to study the interplay of erosion-driven and diffusion-driven pattern formation. We present results from our own work on evolution scenarios of ripple patterns, especially for longer timescales, where nonlinear effects become important. Furthermore we review kinetic phase diagrams, both with and without sample rotation, which depict the systematic dependence of surface patterns on the shape of energy depositing collision cascades after ion impact. Finally, we discuss some results from more recent work on surface diffusion with Ehrlich-Schwoebel barriers as the driving force for pattern formation during IBS and on Monte Carlo simulations of IBS with codeposition of surfactant atoms.

  16. Intense Ion Beam for Warm Dense Matter Physics

    Energy Technology Data Exchange (ETDEWEB)

    Coleman, Joshua Eugene [Univ. of California, Berkeley, CA (United States)

    2008-01-01

    The Neutralized Drift Compression Experiment (NDCX) at Lawrence Berkeley National Laboratory is exploring the physical limits of compression and focusing of ion beams for heating material to warm dense matter (WDM) and fusion ignition conditions. The NDCX is a beam transport experiment with several components at a scale comparable to an inertial fusion energy driver. The NDCX is an accelerator which consists of a low-emittance ion source, high-current injector, solenoid matching section, induction bunching module, beam neutralization section, and final focusing system. The principal objectives of the experiment are to control the beam envelope, demonstrate effective neutralization of the beam space-charge, control the velocity tilt on the beam, and understand defocusing effects, field imperfections, and limitations on peak intensity such as emittance and aberrations. Target heating experiments with space-charge dominated ion beams require simultaneous longitudinal bunching and transverse focusing. A four-solenoid lattice is used to tune the beam envelope to the necessary focusing conditions before entering the induction bunching module. The induction bunching module provides a head-to-tail velocity ramp necessary to achieve peak axial compression at the desired focal plane. Downstream of the induction gap a plasma column neutralizes the beam space charge so only emittance limits the focused beam intensity. We present results of beam transport through a solenoid matching section and simultaneous focusing of a singly charged K+ ion bunch at an ion energy of 0.3 MeV. The results include a qualitative comparison of experimental and calculated results after the solenoid matching section, which include time resolved current density, transverse distributions, and phase-space of the beam at different diagnostic planes. Electron cloud and gas measurements in the solenoid lattice and in the vicinity of intercepting diagnostics are also presented. Finally

  17. Nanodevices produced with focussed ion beams

    International Nuclear Information System (INIS)

    Doetsch, U.; Wieck, A.D.

    1998-01-01

    In directly writing the 30 nm focus of a focussed Ga-ion beam (FIB) with an energy of 100 keV we define insulating lines in two-dimensional electronic layers in semiconductors. Ga ions act in GaAs and silicon as deep impurities or p-type doping, respectively. In this way the insulation by such written lines is due to lateral depletion within npn-like interfaces. In writing two FIB lines with a close spacing we define conducting channels between them. In applying a voltage of several Volts to the adjacent areas of the channel relative to it we can tune the effective width of the channel in the range of a few 100 nm to zero and obtain thus a one-dimensional field-effect-transistor-type structure. This transistor exhibits a pure lateral field effect and is thus topologically very different to current transistor concepts. Due to its particular geometry it is called in-plane-gate (IPG) transistor, since the gate and the channel are in the same plane. The fabrication of this type of transistor is thus completely maskless and does not require any alignment procedures since gate, source and drain are all written in the same writing process. Due to the computer-control of the beam deflection even more complex structures are just a question of software and do not need a set of specific masks or photoresist like in the classical lithography. The required line ion dose is of the order of 10 6 cm -1 which means that there are about 100 ions per μm implanted. For devices with maximum micron dimensions only a few hundred ions need thus to be implanted. (orig.)

  18. Coherent electromagnetic radiation of a combined electron-ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Pankratov, S G; Samoshenkov, Yu K [Vsesoyuznyj Nauchno-Issledovatel' skij Inst. Optiko-Fizicheskikh Izmerenij, Moscow (USSR)

    1977-07-01

    The intensity of coherent electromagnetic radiation due to interaction of a modulated electron beam with a modulated ion beam is calculated. It is shown that the radiation intensity has a sharp maximum at the frequency equal to the difference of the modulation frequency of the electron and ion beams. The results obtained are compared with those corresponding to the scattering of a modulated electron beam on randomly distributed gas ions.

  19. Ion-Beam-Excited Electrostatic Ion Cyclotron Waves

    DEFF Research Database (Denmark)

    Michelsen, Poul; Pécseli, Hans; Juul Rasmussen, Jens

    1976-01-01

    Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field.......Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field....

  20. Focused-ion beam patterning of organolead trihalide perovskite for subwavelength grating nanophotonic applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-07-30

    The coherent amplified spontaneous emission and high photoluminescence quantum efficiency of organolead trihalide perovskite have led to research interest in this material for use in photonic devices. In this paper, the authors present a focused-ion beam patterning strategy for methylammonium lead tribromide (MAPbBr3) perovskite crystal for subwavelength grating nanophotonic applications. The essential parameters for milling, such as the number of scan passes, dwell time, ion dose, ion current, ion incident angle, and gas-assisted etching, were experimentally evaluated to determine the sputtering yield of the perovskite. Based on our patterning conditions, the authors observed that the sputtering yield ranged from 0.0302 to 0.0719 μm3/pC for the MAPbBr3 perovskite crystal. Using XeF2 for the focused-ion beam gas-assisted etching, the authors determined that the etching rate was reduced to between 0.40 and 0.97, depending on the ion dose, compared with milling with ions only. Using the optimized patterning parameters, the authors patterned binary and circular subwavelength grating reflectors on the MAPbBr3 perovskite crystal using the focused-ion beam technique. Based on the computed grating structure with around 97% reflectivity, all of the grating dimensions (period, duty cycle, and grating thickness) were patterned with nanoscale precision (>±3 nm), high contrast, and excellent uniformity. Our results provide a platform for utilizing the focused-ion beam technique for fast prototyping of photonic nanostructures or nanodevices on organolead trihalide perovskite.

  1. 3–10 keV Xe+ ion beam machining of ultra low thermal expansion glasses for EUVL projection optics: Evaluation of surface roughness

    International Nuclear Information System (INIS)

    Morikawa, K.; Kamijo, K.; Morijiri, K.; Pahlovy, S.A.; Aikawa, N.; Miyamoto, I.

    2012-01-01

    In order to obtain surface figure error of 0.15 nm rms and surface roughness (R rms ) of 0.12 nm rms for aspherical substrates in EUVL tools, ion beam figuring may be adopted to final surface figure error correction of aspherical substrates. During figure error correction, machined surface of the substrate becomes rougher than the pre-finished one. Therefore, we investigated the machined depth and ion energy dependences of R rms (measured by an AFM) of substrates machined by 3–10 keV Xe + ion beam, and compared them with the results obtained for Ar + ion beam. Result shows that the R rms s of CLEARCERAM®-Z, Zerodur® and ULE® substrates machined to the depth of 50 nm by 3–10 keV Xe + ion beam at the normal ion incidence angle become approximately 0.25, 0.28 and 0.15 nm rms, respectively. Those values are larger than the pre-finished substrates (0.07–0.09 nm rms), but smaller than that (0.60 nm rms for CLEARCERAM®-Z, 0.61 nm rms for Zerodur® and 0.18 nm rms for ULE®) of the substrates machined by Ar + ion beam. Moreover, the R rms s merely increase with increasing ion energy. The R rms s of the ULE® substrate machined by 3–10 keV Xe + ion beam rapidly increase with increasing machined depth, then saturate at machined depth of 10–50 nm. The saturated values of the R rms s are 0.12 and 0.15 nm rms for 3 and 10 keV Xe + ion beam respectively. We suggest that the 3 keV Xe + ion beam machining can be applicable for final shape correction of ULE® substrates for EUVL projection optics in association with considering further ultra smoothing process such as Si deposition or low energy ion beam smoothing.

  2. Study and utilization of ion beams created in the Focus experiment

    International Nuclear Information System (INIS)

    Bernard, A.; Garconnet, J.P.; Jolas, A.; Le Breton, J.P.; Mascureau, J. de.

    1982-06-01

    Ion beams created in a plasma focus electrical discharge are evidenced and measured from interaction with CD 2 and DLi targets. Aluminum targets are also used with observation of the radiation temperature and material expansion velocity. Comparison between experimental measurements and numerical computations allows to determine energy deposition in the aluminum foil as well as beams values. With the 200 kJ Actime facility 2 to 3 MJ/g deposition is obtained in aluminum on approximately one square centimeter. A fast valve gas injection has been developed on another facility and preliminary results are given [fr

  3. Capillary assisted deposition of carbon nanotube film for strain sensing

    Science.gov (United States)

    Li, Zida; Xue, Xufeng; Lin, Feng; Wang, Yize; Ward, Kevin; Fu, Jianping

    2017-10-01

    Advances in stretchable electronics offer the possibility of developing skin-like motion sensors. Carbon nanotubes (CNTs), owing to their superior electrical properties, have great potential for applications in such sensors. In this paper, we report a method for deposition and patterning of CNTs on soft, elastic polydimethylsiloxane (PDMS) substrates using capillary action. Micropillar arrays were generated on PDMS surfaces before treatment with plasma to render them hydrophilic. Capillary force enabled by the micropillar array spreads CNT solution evenly on PDMS surfaces. Solvent evaporation leaves a uniform deposition and patterning of CNTs on PDMS surfaces. We studied the effect of the CNT concentration and micropillar gap size on CNT coating uniformity, film conductivity, and piezoresistivity. Leveraging the piezoresistivity of deposited CNT films, we further designed and characterized a device for the contraction force measurement. Our capillary assisted deposition method of CNT films showed great application potential in fabrication of flexible CNT thin films for strain sensing.

  4. Controllable deposition of gadolinium doped ceria electrolyte films by magnetic-field-assisted electrostatic spray deposition

    International Nuclear Information System (INIS)

    Ksapabutr, Bussarin; Chalermkiti, Tanapol; Wongkasemjit, Sujitra; Panapoy, Manop

    2013-01-01

    This paper describes a simple and low-temperature approach to fabrication of dense and crack-free gadolinium doped ceria (GDC) thin films with controllable deposition by a magnetic-field-assisted electrostatic spray deposition technique. The influences of external permanent magnets on the deposition of GDC films were investigated. The coating area deposited using two magnets with the same pole arrangement decreased in comparison with the case of no magnets, whereas the largest deposition area was obtained in the system of the opposite poles. Analysis of as-deposited films at 450 °C indicated the formation of uniform, smooth and dense thin films with a single-phase fluorite structure. The films produced in the system using same poles were thicker, smaller in crystallite size and smoother than those fabricated under other conditions. Additionally, the GDC film deposited using the same pole arrangement showed the maximum in electrical conductivity of about 2.5 × 10 −2 S/cm at a low operating temperature of 500 °C. - Highlights: • Magnetic-field-assisted electrostatic spray allows a controllable coating. • Dense, crack-free thin films were obtained at low process temperature of 450 °C. • Control of deposition, thickness and uniformity is easy to achieve simultaneously. • Films from the same pole were thicker, smaller in crystal size and smoother. • The maximum conductivity of doped ceria film was 2.5 × 10 −2 S/cm at 500 °C

  5. Neutralization of an ion beam from the end-Hall ion source by a plasma electron source based on a discharge in crossed E × H fields

    Science.gov (United States)

    Dostanko, A. P.; Golosov, D. A.

    2009-10-01

    The possibility of using a plasma electron source (PES) with a discharge in crossed E × H field for compensating the ion beam from an end-Hall ion source (EHIS) is analyzed. The PES used as a neutralizer is mounted in the immediate vicinity of the EHIS ion generation and acceleration region at 90° to the source axis. The behavior of the discharge and emission parameters of the EHIS is determined for operation with a filament neutralizer and a plasma electron source. It is found that the maximal discharge current from the ion source attains a value of 3.8 A for operation with a PES and 4 A for operation with a filament compensator. It is established that the maximal discharge current for the ion source strongly depends on the working gas flow rate for low flow rates (up to 10 ml/min) in the EHIS; for higher flow rates, the maximum discharge current in the EHIS depends only on the emissivity of the PES. Analysis of the emission parameters of EHISs with filament and plasma neutralizers shows that the ion beam current and the ion current density distribution profile are independent of the type of the electron source and the ion current density can be as high as 0.2 mA/cm2 at a distance of 25 cm from the EHIS anode. The balance of currents in the ion source-electron source system is considered on the basis of analysis of operation of EHISs with various sources of electrons. It is concluded that the neutralization current required for operation of an ion source in the discharge compensation mode must be equal to or larger than the discharge current of the ion source. The use of PES for compensating the ion beam from an end-Hall ion source proved to be effective in processes of ion-assisted deposition of thin films using reactive gases like O2 or N2. The application of the PES technique makes it possible to increase the lifetime of the ion-assisted deposition system by an order of magnitude (the lifetime with a Ti cathode is at least 60 h and is limited by the

  6. Ion beam pellet fusion as a CTR neutron test source

    International Nuclear Information System (INIS)

    Arnold, R.; Martin, R.

    1975-07-01

    Pellet fusion, driven by nanosecond pulses containing α particles with 200 MeV energy, is being developed as a neutron source. A prototype system is in the conceptual design stage. During the coming year, engineering design of required accelerator components, storage rings, and pellet configurations, as well as experiments on energy deposition mechanisms, should be accomplished. Successful construction and tests of prototype rings, followed by two years of full scale system construction, would give a source producing a useful flux of fusion neutrons for materials testing. The system as currently envisioned would employ 100 small superconducting high field storage rings (15 cm radius, 140 kG field) which would be synchronously filled with circulating 1 nsec pulses from a 200 MeV linear accelerator over a period of 3 x 10 -4 sec. These ion pulses would all be simultaneously extracted, forming a total current of 10 kA, and focussed from all directions on a deuterium and tritium (DT) pellet with 0.17 mm radium, surrounded by a heavier (metal) coating to increase confinement time and aid compression efficiency. The overall repetition rate, limited principally by physical transport of the pellets, could reach 100/sec. Spacing between pellet and focussing elements would be about 1 m. The predominant engineering problems are the fast extraction mechanism and beam transport devices for the storage rings. Additional theoretical and experimental studies are required on the crucial energy deposition and transport mechanisms in pellets with ion beam heating before firm estimates can be given. Preliminary estimates suggest fusion neutron yields of at least 10 14 /sec and possibly 10 16 /sec are possible, with optimal pellet dynamics, but without the necessity for any large advances in the state-of-the-art in accelerator and storage ring design. (auth)

  7. From field evaporation to focused ion beams

    International Nuclear Information System (INIS)

    Forbes, R.G.

    2004-01-01

    Full text: This paper report various items of recent progress in the theory of field evaporation and the theory of the liquid-metal ion source. The research has, in part, been driven by a desire to find out how to reduce the beam-spot size in a focused ion beam machine, which is developing as a significant tool of nanotechnology. A major factor in determining beam spot size seems to be the behavior of the liquid-metal ion source (LMIS), and one route might be to reduce the minimum emission current of a LMIS, if this is possible. Theories of LMIS minimum emission current have been re-examined. Some progress has been made, but development of more accurate theory has been constrained by several factors, include the long-known limitations of the present theory of field evaporation (FEV). This, in turn, has stimulated a wider re-examination of FEV theory. As part of some general theoretical remarks, the following items of recent progress will be covered. Various results concerning the prediction of the field F e at which the activation energy Q for field evaporation is zero, including calculations in which vacuum electrostatic energy changes are taken into account, and another look at the views of Kingham and Tsong concerning escape charge-state. Some years ago, the following approximate formula was derived for the dependence of FEV activation energy on field F: Q=B(F e /F - 1) 2 . It has recently been possible to show that the parameter B can be estimated as B= βYΩ/8, where Y is Young's modulus, Ω is the atomic volume, and β is a correction factor of order. In the framework of the charge-draining mechanism, another look at how the activation-energy hump can be modelled, in order to predict/explain the conditions under which FEV becomes dominated by ion tunnelling rather than field evaporation. A review of the changes in LMIS theory that result from applying the equation of continuity to the metal/vacuum interface, including modifications to the theory of minimum

  8. Dense CdS thin films on fluorine-doped tin oxide coated glass by high-rate microreactor-assisted solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Su, Yu-Wei, E-mail: suyuweiwayne@gmail.com [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ramprasad, Sudhir [Energy Processes and Materials Division, Pacific Northwest National Laboratory, Corvallis, OR 9730 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Han, Seung-Yeol; Wang, Wei [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ryu, Si-Ok [School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeonsan, Gyeongbuk 712-749 (Korea, Republic of); Palo, Daniel R. [Barr Engineering Co., Hibbing, MN 55747 (United States); Paul, Brian K. [School of Mechanical, Industrial and Manufacturing Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Chang, Chih-hung [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States)

    2013-04-01

    Continuous microreactor-assisted solution deposition is demonstrated for the deposition of CdS thin films on fluorine-doped tin oxide (FTO) coated glass. The continuous flow system consists of a microscale T-junction micromixer with the co-axial water circulation heat exchanger to control the reacting chemical flux and optimize the heterogeneous surface reaction. Dense, high quality nanocrystallite CdS thin films were deposited at an average rate of 25.2 nm/min, which is significantly higher than the reported growth rate from typical batch chemical bath deposition process. Focused-ion-beam was used for transmission electron microscopy specimen preparation to characterize the interfacial microstructure of CdS and FTO layers. The band gap was determined at 2.44 eV by UV–vis absorption spectroscopy. X-ray photon spectroscopy shows the binding energies of Cd 3d{sub 3/2}, Cd 3d{sub 5/2}, S 2P{sub 3/2} and S 2P{sub 1/2} at 411.7 eV, 404.8 eV, 162.1 eV and 163.4 eV, respectively. - Highlights: ► CdS films deposited using continuous microreactor-assisted solution deposition (MASD) ► Dense nanocrystallite CdS films can be reached at a rate of 25.2 [nm/min]. ► MASD can approach higher film growth rate than conventional chemical bath deposition.

  9. Engineering catalytic activity via ion beam bombardment of catalyst supports for vertically aligned carbon nanotube growth

    Science.gov (United States)

    Islam, A. E.; Nikolaev, P.; Amama, P. B.; Zakharov, D.; Sargent, G.; Saber, S.; Huffman, D.; Erford, M.; Semiatin, S. L.; Stach, E. A.; Maruyama, B.

    2015-09-01

    Carbon nanotube growth depends on the catalytic activity of metal nanoparticles on alumina or silica supports. The control on catalytic activity is generally achieved by variations in water concentration, carbon feed, and sample placement on a few types of alumina or silica catalyst supports obtained via thin film deposition. We have recently expanded the choice of catalyst supports by engineering inactive substrates like c-cut sapphire via ion beam bombardment. The deterministic control on the structure and chemistry of catalyst supports obtained by tuning the degree of beam-induced damage have enabled better regulation of the activity of Fe catalysts only in the ion beam bombarded areas and hence enabled controllable super growth of carbon nanotubes. A wide range of surface characterization techniques were used to monitor the catalytically active surface engineered via ion beam bombardment. The proposed method offers a versatile way to control carbon nanotube growth in patterned areas and also enhances the current understanding of the growth process. With the right choice of water concentration, carbon feed and sample placement, engineered catalyst supports may extend the carbon nanotube growth yield to a level that is even higher than the ones reported here, and thus offers promising applications of carbon nanotubes in electronics, heat exchanger, and energy storage.

  10. Atmosphere influence on in situ ion beam analysis of thin film growth

    International Nuclear Information System (INIS)

    Lin, Yuping; Krauss, A.R.; Gruen, D.M.; Chang, R.P.H.; Auciello, O.H.; Schultz, J.A.

    1994-01-01

    In situ, nondestructive surface characterization of thin-film growth processes in an environment of chemically active gas at pressures of several mTorr is required both for the understanding of growth processes in multicomponent films and layered heterostructures and for the improvement of process reproducibility and device reliability. The authors have developed a differentially pumped pulsed ion beam surface analysis system that includes ion scattering spectroscopy (ISS) and direct recoil spectroscopy (DRS), coupled to an automated ion beam sputter-deposition system (IBSD), to study film growth processes in an environment of chemically active gas, such as required for the growth of oxide, nitride, or diamond thin films. The influence of gas-phase scattering and gas-surface interactions on the ISS and DRS signal intensity and peak shape have been studied. From the intensity variation as a function of ambient gas pressure, the authors have calculated the mean free path and the scattering cross-section for a given combination of primary ion species and ambient gas. Depending on the system geometry and the combination of primary beam and background, it is shown that surface-specific data can be obtained during thin-film growth at pressures ranging from a few mtorr to approximately 1 Torr. Detailed information such as surface composition, structure, and film growth mechanism may be obtained in real-time, making ion beam analysis an ideal nondestructive, in situ probe of thin-film growth processes

  11. The electrochemical behavior and surface structure of titanium electrodes modified by ion beams

    International Nuclear Information System (INIS)

    Huang, G.F.; Xie, Z.; Huang, W.Q.; Yang, S.B.; Zhao, L.H.

    2004-01-01

    Industrial grade titanium modified by ion implantation and sputtering was used as electrodes. The effect of ion beam modification on the electrochemical behavior and surface structure of electrodes was investigated. Also discussed is the hydrogen evolution process of the electrode in acidic solution. Several ions such as Fe + , C + , W + , Ni + and others, were implanted into the electrode. The electrochemical tests were carried out in 1N H 2 SO 4 solution at 30±1 deg. C. The electrode potential was measured versus a saturate calomel electrode as a function of immersion time. The cathodic polarization curves were measured by the stable potential static method. The surface layer composition and the chemical state of the electrodes were also investigated by Auger electron spectrometer (AES) and X-ray photoelectron spectroscopy (XPS) technique. The results show that: (1) the stability of modified electrodes depends on the active elements introduced by ion implantation and sputtering deposition. (2) The hydrogen evolution activity of industrial grade titanium may be improved greatly by ion beam modification. (3) Ion beam modification changed the composition and the surface state of electrodes over a certain depth range and forms an activity layer having catalytic hydrogen evolution, which inhibited the absorption of hydrogen and formation of titanium hydride. Thus promoted hydrogen evolution and improved the hydrogen evolution catalytic activity in industrial grade titanium

  12. Summary of Industry-Academia Collaboration Projects on Cluster Ion Beam Process Technology

    International Nuclear Information System (INIS)

    Yamada, Isao; Toyoda, Noriaki; Matsuo, Jiro

    2008-01-01

    Processes employing clusters of ions comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals, and dielectrics, to assisted formation of thin films with nano-scale accuracy, and to other surface modification applications. In 2000, a four year R and D project for development of industrial technology began in Japan under funding from the New Energy and Industrial Technology Development Organization (NEDO). Subjects of the projects are in areas of equipment development, semiconductor surface processing, high accuracy surface processing and high-quality film formation. In 2002, another major cluster ion beam project which emphasized nano-technology applications has started under a contract from the Ministry of Economy and Technology for Industry (METI). This METI project involved development related to size-selected cluster ion beam equipment and processes, and development of GCIB processes for very high rate etching and for zero damage etching of magnetic materials and compound semiconductor materials. This paper describes summery of the results.

  13. An ion beam analysis software based on ImageJ

    International Nuclear Information System (INIS)

    Udalagama, C.; Chen, X.; Bettiol, A.A.; Watt, F.

    2013-01-01

    The suit of techniques (RBS, STIM, ERDS, PIXE, IL, IF,…) available in ion beam analysis yields a variety of rich information. Typically, after the initial challenge of acquiring data we are then faced with the task of having to extract relevant information or to present the data in a format with the greatest impact. This process sometimes requires developing new software tools. When faced with such situations the usual practice at the Centre for Ion Beam Applications (CIBA) in Singapore has been to use our computational expertise to develop ad hoc software tools as and when we need them. It then became apparent that the whole ion beam community can benefit from such tools; specifically from a common software toolset that can be developed and maintained by everyone with freedom to use and allowance to modify. In addition to the benefits of readymade tools and sharing the onus of development, this also opens up the possibility for collaborators to access and analyse ion beam data without having to depend on an ion beam lab. This has the virtue of making the ion beam techniques more accessible to a broader scientific community. We have identified ImageJ as an appropriate software base to develop such a common toolset. In addition to being in the public domain and been setup for collaborative tool development, ImageJ is accompanied by hundreds of modules (plugins) that allow great breadth in analysis. The present work is the first step towards integrating ion beam analysis into ImageJ. Some of the features of the current version of the ImageJ ‘ion beam’ plugin are: (1) reading list mode or event-by-event files, (2) energy gates/sorts, (3) sort stacks, (4) colour function, (5) real time map updating, (6) real time colour updating and (7) median and average map creation

  14. An ion beam analysis software based on ImageJ

    Energy Technology Data Exchange (ETDEWEB)

    Udalagama, C., E-mail: chammika@nus.edu.sg [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117 542 (Singapore); Chen, X.; Bettiol, A.A.; Watt, F. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117 542 (Singapore)

    2013-07-01

    The suit of techniques (RBS, STIM, ERDS, PIXE, IL, IF,…) available in ion beam analysis yields a variety of rich information. Typically, after the initial challenge of acquiring data we are then faced with the task of having to extract relevant information or to present the data in a format with the greatest impact. This process sometimes requires developing new software tools. When faced with such situations the usual practice at the Centre for Ion Beam Applications (CIBA) in Singapore has been to use our computational expertise to develop ad hoc software tools as and when we need them. It then became apparent that the whole ion beam community can benefit from such tools; specifically from a common software toolset that can be developed and maintained by everyone with freedom to use and allowance to modify. In addition to the benefits of readymade tools and sharing the onus of development, this also opens up the possibility for collaborators to access and analyse ion beam data without having to depend on an ion beam lab. This has the virtue of making the ion beam techniques more accessible to a broader scientific community. We have identified ImageJ as an appropriate software base to develop such a common toolset. In addition to being in the public domain and been setup for collaborative tool development, ImageJ is accompanied by hundreds of modules (plugins) that allow great breadth in analysis. The present work is the first step towards integrating ion beam analysis into ImageJ. Some of the features of the current version of the ImageJ ‘ion beam’ plugin are: (1) reading list mode or event-by-event files, (2) energy gates/sorts, (3) sort stacks, (4) colour function, (5) real time map updating, (6) real time colour updating and (7) median and average map creation.

  15. Electron beam based transversal profile measurements of intense ion beams

    International Nuclear Information System (INIS)

    El Moussati, Said

    2014-01-01

    A non-invasive diagnostic method for the experimental determination of the transverse profile of an intense ion beam has been developed and investigated theoretically as well as experimentally within the framework of the present work. The method is based on the deflection of electrons when passing the electromagnetic field of an ion beam. To achieve this an electron beam is employed with a specifically prepared transversal profile. This distinguish this method from similar ones which use thin electron beams for scanning the electromagnetic field [Roy et al. 2005; Blockland10]. The diagnostic method presented in this work will be subsequently called ''Electron-Beam-Imaging'' (EBI). First of all the influence of the electromagnetic field of the ion beam on the electrons has been theoretically analyzed. It was found that the magnetic field causes only a shift of the electrons along the ion beam axis, while the electric field only causes a shift in a plane transverse to the ion beam. Moreover, in the non-relativistic case the magnetic force is significantly smaller than the Coulomb one and the electrons suffer due to the magnetic field just a shift and continue to move parallel to their initial trajectory. Under the influence of the electric field, the electrons move away from the ion beam axis, their resulting trajectory shows a specific angle compared to the original direction. This deflection angle practically depends just on the electric field of the ion beam. Thus the magnetic field has been neglected when analysing the experimental data. The theoretical model provides a relationship between the deflection angle of the electrons and the charge distribution in the cross section of the ion beam. The model however only can be applied for small deflection angles. This implies a relationship between the line-charge density of the ion beam and the initial kinetic energy of the electrons. Numerical investigations have been carried out to clarify the

  16. Deposition, milling, and etching with a focused helium ion beam

    NARCIS (Netherlands)

    Alkemade, P.F.A.; Veldhoven, E. van

    2012-01-01

    The recent successful development of the helium ion microscope has produced both a new type of microscopy and a new tool for nanoscale manufacturing. This chapter reviews the first explorations in this new field in nanofabrication. The studies that utilize the Orion helium ion microscope to grow or

  17. Ion beam microanalysis of human hair follicles

    International Nuclear Information System (INIS)

    Kertesz, Zs.; Szikszai, Z.; Telek, A.; Biro, T.; Debrecen Univ.

    2006-01-01

    Complete text of publication follows. Hair follicle (HF) is an appendage organ of the skin which is of importance to the survival of mammals and still maintains significance for the human race - not just biologically, but also through cosmetic and commercial considerations. However data on the composition of hair follicles are scarce and mostly limited to the hair shaft. In addition, to the best of our knowledge, no data are available concerning the distribution of elements in human hair follicle with various growth and cycling phases. In this study [1] we provided detailed quantitative elemental distribution of organ-cultured hair follicle in anagen and catagen growth phases using ion microscopy in order to reach a better understanding of the function, development, and cyclic activity of the hair follicle. The microprobe analysis was carried out at the scanning ion microprobe facilities at the ATOMKI Debrecen, and at the Jozef Stefan Institute, Ljubljana, Slovenia, using combined STIM and PIXE ion beam analytical techniques. Human anagen hair follicles were isolated from skin obtained from females undergoing face-lift surgery. Cultured anagen HFs were treated by either vehicle or by 10 μM capsaicin for 5 days. Elemental distributions and absolute concentrations were determined along 5 capsaicin treated (catagen), and 4 control (anagen) hair follicles. The investigated length varied between 1.5 and 2 mm. Average elemental concentration values of the whole sample and the different morphological parts were also determined. Concentrations for most of the elements were found to be the same in the corresponding parts of the anagen and the catagen hair follicles. However, significant differences were observed in the Ca concentration between the anagen and catagen HFs. With respect to the distribution of Ca, in anagen (control) HFs, the following concentrations were measured (given in μg/g dry weight): dermal papilla, ∼500; matrix of the bulb, 1000-1500; outer/ inner

  18. Development of Emittance Analysis Software for Ion Beam Characterization

    International Nuclear Information System (INIS)

    Padilla, M.J.; Liu, Yuan

    2007-01-01

    Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a figure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally, a high-quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifield Radioactive Ion Beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profiles, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fitting are also incorporated into the software. The software will provide a simplified, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate

  19. DEVELOPMENT OF EMITTANCE ANALYSIS SOFTWARE FOR ION BEAM CHARACTERIZATION

    Energy Technology Data Exchange (ETDEWEB)

    Padilla, M. J.; Liu, Y.

    2007-01-01

    Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a fi gure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally a high quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifi eld Radioactive Ion beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profi les, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fi tting are also incorporated into the software. The software will provide a simplifi ed, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate.

  20. Frequency threshold for ion beam formation in expanding RF plasma

    Science.gov (United States)

    Chakraborty Thakur, Saikat; Harvey, Zane; Biloiu, Ioana; Hansen, Alex; Hardin, Robert; Przybysz, William; Scime, Earl

    2008-11-01

    We observe a threshold frequency for ion beam formation in expanding, low pressure, argon helicon plasma. Mutually consistent measurements of ion beam energy and density relative to the background ion density obtained with a retarding field energy analyzer and laser induced fluorescence indicate that a stable ion beam of 15 eV appears for source frequencies above 11.5 MHz. Reducing the frequency increases the upstream beam amplitude. Downstream of the expansion region, a clear ion beam is seen only for the higher frequencies. At lower frequencies, large electrostatic instabilities appear and an ion beam is not observed. The upstream plasma density increases sharply at the same threshold frequency that leads to the appearance of a stable double layer. The observations are consistent with the theoretical prediction that downstream electrons accelerated into the source by the double layer lead to increased ionization, thus balancing the higher loss rates upstream [1]. 1. M. A. Lieberman, C. Charles and R. W. Boswell, J. Phys. D: Appl. Phys. 39 (2006) 3294-3304

  1. Application of ion beams for polymeric carbon based biomaterials

    International Nuclear Information System (INIS)

    Evelyn, A.L.

    2001-01-01

    Ion beams have been shown to be quite suitable for the modification and analysis of carbon based biomaterials. Glassy polymeric carbon (GPC), made from cured phenolic resins, has a high chemical inertness that makes it useful as a biomaterial in medicine for drug delivery systems and for the manufacture of heart valves and other prosthetic devices. Low and high-energy ion beams have been used, with both partially and fully cured phenolic resins, to enhance biological cell/tissue growth on, and to increase tissue adhesion to GPC surfaces. Samples bombarded with energetic ion beams in the keV to MeV range exhibited increased surface roughness, measured using optical microscopy and atomic force microscopy. Ion beams were also used to perform nuclear reaction analyses of GPC encapsulated drugs for use in internal drug delivery systems. The results from the high energy bombardment were more dramatic and are shown in this paper. The interaction of energetic ions has demonstrated the useful application of ion beams to enhance the properties of carbon-based biomaterials

  2. Ion beam induced stress formation and relaxation in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2013-07-15

    Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

  3. The mass effect model of the survival rate's dose effect of organism irradiated with low energy ion beam

    International Nuclear Information System (INIS)

    Shao Chunlin; Gui Qifu; Yu Zengliang

    1995-01-01

    The main characteristic of the low energy ions mutation is its mass deposition effect. Basing on the theory of 'double strand breaking' and the 'mass deposition effect', the authors suggests that the mass deposition products can repair or further damage the double strand breaking of DNA. According to this consideration the dose effect model of the survival rate of organism irradiated by low energy of N + ion beam is deduced as: S exp{-p[αφ + βφ 2 -Rφ 2 exp(-kφ)-Lφ 3 exp(-kφ)]}, which can be called 'mass effect model'. In the low energy ion beam mutation, the dose effects of many survival rates that can not be imitated by previous models are successfully imitated by this model. The suitable application fields of the model are also discussed

  4. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  5. Focused ion beam damage to MOS integrated circuits

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Campbell, Ann N.; Hembree, Charles E.; Tangyunyong, Paiboon; Jessing, Jeffrey R.; Soden, Jerry M.

    2000-01-01

    Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga + ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired by a FIB between manufacture and operation, since the performance and reliability of a given IC is otherwise at risk in subsequent system application. In this summary, the authors discuss the relative roles of radiation damage and charging effects during FIB imaging. Data from exposures of packaged parts under controlled bias indicate the possibility for secondary radiation damage during FIB exposure. On the other hand, FIB exposure of unbiased wafers (a more common application) typically results in damage caused by high-voltage stress or electrostatic discharge. Implications for FIB exposure and subsequent IC use are discussed

  6. Investigation of fish otoliths by combined ion beam analysis

    International Nuclear Information System (INIS)

    Huszank, R.; Simon, A.; Keresztessy, K.

    2008-01-01

    Complete text of publication follows. This work was implemented within the framework of the Hungarian Ion beam Physics Platform (http://hipp.atomki.hu/). Otoliths are small structures, 'the ear stones' of a fish, and are used to detect acceleration and orientation. They are composed of a combination of protein matrix and calcium carbonate (CaCO 3 ) forming aragonite micro crystals. They have an annually deposited layered conformation with a microstructure corresponding to the seasonal and daily increments. Trace elements, such as Sr, Zn, Fe etc., are also incorporated into the otolith from the environment and the nutrition. The elemental distribution of the otolith of fresh water fish burbot (Lota lota L.) collected in Hungary was measured with Elastic Recoil Detection Analysis (ERDA), Rutherford backscattering spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) at the Nuclear Microprobe Facility of HAS ATOMKI. The spatial 3D structure of the otolith could be observed with a sub-micrometer resolution. It is confirmed that the aragonite micro-crystals are covered by an organic layer and there are some protein rich regions in the otolith, too. By applying the RBSMAST code developed for RBS on macroscopic structure, it was proven that the orientation of the needle shaped aragonite crystals is considerably different at adjacent locations in the otolith. The organic and inorganic component of the otolith could be set apart in the depth selective hydrogen and calcium maps derived by micro- ERDA and micro-RBS. Similar structural analysis could be done near the surface by combining the C, O and Ca elemental maps determined by micro-PIXE measurements. It was observed that the trace metal Zn is bound to the protein component. Acknowledgements This work was partially supported by the Hungarian OTKA Grant No. T046238 and the EU cofunded Economic Competitiveness Operative Programme (GVOP-3.2.1.-2004-04-0402/3.0)

  7. New cultivar produced by heavy-ion beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari [Suntory Flowers Ltd., Higashiomi, Shiga (Japan); Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko [RIKEN, Nishina Center, Wako, Saitama (Japan)

    2007-03-15

    The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

  8. Ballistic-neutralized chamber transport of intense heavy ion beams

    International Nuclear Information System (INIS)

    Rose, D.V.; Welch, D.R.; Oliver, B.V.; Clark, R.E.; Sharp, W.M.; Friedman, A.

    2001-01-01

    Two-dimensional particle-in-cell simulations of intense heavy ion beams propagating in an inertial confinement fusion (ICF) reactor chamber are presented. The ballistic-neutralized transport scheme studied uses 4 GeV Pb +1 ion beams injected into a low-density, gas-filled reactor chamber and the beam is ballistically focused onto an ICF target before entering the chamber. Charge and current neutralization of the beam is provided by the low-density background gas. The ballistic-neutralized simulations include stripping of the beam ions as the beam traverses the chamber as well as ionization of the background plasma. In addition, a series of simulations are presented that explore the charge and current neutralization of the ion beam in an evacuated chamber. For this vacuum transport mode, neutralizing electrons are only drawn from sources near the chamber entrance

  9. Mutation induced with ion beam irradiation in rose

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, H. E-mail: yhiroya@nias.affrc.go.jp; Nagatomi, S.; Morishita, T.; Degi, K.; Tanaka, A.; Shikazono, N.; Hase, Y

    2003-05-01

    The effects of mutation induction by ion beam irradiation on axillary buds in rose were investigated. Axillary buds were irradiated with carbon and helium ion beams, and the solid mutants emerged after irradiation by repeated cutting back. In helium ion irradiation, mutations were observed in plants derived from 9 buds among 56 irradiated buds in 'Orange Rosamini' and in plants derived from 10 buds among 61 irradiated buds in 'Red Minimo'. In carbon ion, mutations were observed in plants derived from 12 buds among 88 irradiated buds in 'Orange Rosamini'. Mutations were induced not only in higher doses but also in lower doses, with which physiological effect by irradiation was hardly observed. Irradiation with both ion beams induced mutants in the number of petals, in flower size, in flower shape and in flower color in each cultivar.

  10. Facilities for radiotherapy with ion beams status and worldwide developments

    CERN Document Server

    Wolf, B H

    1999-01-01

    Forty-five years after the first ion beam therapy in Berkeley around 25,000 cancer patients worldwide have been treated successfully. Ion accelerators, designed for nuclear research, delivered most of this treatment. The first hospital-based facility started operation in 1998 at Loma Linda California, the first for heavier ions at Chiba, Japan in 1994 and the first commercially delivered facilities started operation in 1998 at Kashiwa, Japan. In 2000, the Harvard Medical Centre, Boston, US, will commence operation and several new facilities are planned or under construction worldwide, although none in Australia. This paper will discuss the physical and biological advantages of ion beams over x-rays and electrons. In the treatment of cancer patients ion beam therapy is especially suited for localised tumours in radiation sensitive areas like skull or spine. Heavier ions are also effective in anoxic tumour cells (found around the normally oxygenated cell population). An additional advantage of the heavier carbo...

  11. LET effects of high energy ion beam irradiation on polysilanes

    Energy Technology Data Exchange (ETDEWEB)

    Seki, Shu; Kanzaki, Kenichi; Tagawa, Seiichi; Yoshida, Yoichi [Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research; Kudoh, Hisaaki; Sugimoto, Masaki; Sasuga, Tsuneo; Seguchi, Tadao; Shibata, Hiromi

    1997-03-01

    Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)

  12. Neutralization principles for the Extraction and Transport of Ion Beams

    CERN Document Server

    Riege, H

    2000-01-01

    The strict application of conventional extraction techniques of ion beams from a plasma source is characterized by a natural intensity limit determined by space charge.The extracted current may be enhanced far beyond this limit by neutralizing the space charge of the extracted ions in the first extraction gap of the source with electrons injected from the opposite side. The transverse and longitudinal emittances of a neutralized ion beam, hence its brightness, are preserved. Results of beam compensation experiments, which have been carried out with a laser ion source, are resumed for proposing a general scheme of neutralizing ion sources and their adjacent low-energy beam transport channels with electron beams. Many technical applications of high-mass ion beam neutralization technology may be identified: the enhancement of ion source output for injection into high-intensity, low-and high-energy accelerators, or ion thrusters in space technology, for the neutral beams needed for plasma heating of magnetic conf...

  13. Ion beam mixing in Ag-Pd alloys

    International Nuclear Information System (INIS)

    Klatt, J.L.; Averback, R.S.; Peak, D.

    1989-01-01

    Ion beam mixing during 750 keV Kr + irradiation at 80 K was measured on a series of Ag-Pd alloys using Au marker atoms. The mixing in pure Ag was the greatest and it decreased monotonically with increasing Pd content, being a factor of 10 higher in pure Ag than in pure Pd. This large difference in mixing cannot be explained by the difference in cohesion energy between Ag and Pd in the thermodynamic model of ion beam mixing proposed by Johnson et al. [W. L. Johnson, Y. T. Cheng, M. Van Rossum, and M-A. Nicolet, Nucl. Instrum. Methods B 7/8, 657 (1985)]. An alternative model based on local melting in the cascade is shown to account for the ion beam mixing results in Ag and Pd

  14. Ion beam neutralization with ferroelectrically generated electron beams

    Energy Technology Data Exchange (ETDEWEB)

    Herleb, U; Riege, H [European Organization for Nuclear Research, Geneva (Switzerland). LHC Division

    1997-12-31

    A technique for ion beam space-charge neutralization with pulsed electron beams is described. The intensity of multiply-charged ions produced with a laser ion source can be enhanced or decreased separately with electron beam trains of MHz repetition rate. These are generated with ferroelectric cathodes, which are pulsed in synchronization with the laser ion source. The pulsed electron beams guide the ion beam in a similar way to the alternating gradient focusing of charged particle beams in circular accelerators such as synchrotrons. This new neutralization technology overcomes the Langmuir-Child space-charge limit and may in future allow ion beam currents to be transported with intensities by orders of magnitude higher than those which can be accelerated today in a single vacuum tube. (author). 6 figs., 10 refs.

  15. RF plasma source for heavy ion beam charge neutralization

    International Nuclear Information System (INIS)

    Efthimion, Philip C.; Gilson, Erik; Grisham, Larry; Davidson, Ronald C.; Yu, Simon S.; Logan, B. Grant

    2003-01-01

    Highly ionized plasmas are being used as a medium for charge neutralizing heavy ion beams in order to focus the ion beam to a small spot size. A radio frequency (RF) plasma source has been built at the Princeton Plasma Physics Laboratory (PPPL) in support of the joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The goal is to operate the source at pressures ∼ 10 -5 Torr at full ionization. The initial operation of the source has been at pressures of 10 -4 -10 -1 Torr and electron densities in the range of 10 8 -10 11 cm -3 . Recently, pulsed operation of the source has enabled operation at pressures in the 10 -6 Torr range with densities of 10 11 cm -3 . Near 100% ionization has been achieved. The source has been integrated with the NTX facility and experiments have begun

  16. Ion Beams: A Powerful Tool for Making New Functional Materials

    International Nuclear Information System (INIS)

    Dev, B. N.

    2010-01-01

    It is well known that ion beams play an important role in semiconductor industry, which utilizes ion implantation and irradiation for materials modification. Ion sputtering technique is used to fabricate multifunctional coatings and multilayers. Using ion implantation, there is a continued effort for fabrication of quantum bit structures for future quantum computers. Availability of focused ion beams (FIBs) has widened the applications of ion beams and nanostructured functional materials are being fabricated using FIBs. Various quantum structures can be fabricated using FIB. Ferromagnetism can either be induced or destroyed in special layered structures using ion irradiation. The magnetic exchange bias phenomenon is of tremendous utility in magnetic recording. Issues of lateral diffusion in nanoscale doping of semiconductors by FIB and an example of exchange bias enhancement by ion irradiation are discussed.

  17. New cultivar produced by heavy-ion beam irradiation

    International Nuclear Information System (INIS)

    Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari; Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko

    2007-01-01

    The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

  18. Final project report for NEET pulsed ion beam project

    Energy Technology Data Exchange (ETDEWEB)

    Kucheyev, S. O. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2018-01-11

    The major goal of this project was to develop and demonstrate a novel experimental approach to access the dynamic regime of radiation damage formation in nuclear materials. In particular, the project exploited a pulsed-ion-beam method in order to gain insight into defect interaction dynamics by measuring effective defect interaction time constants and defect diffusion lengths. This project had the following four major objectives: (i) the demonstration of the pulsed ion beam method for a prototypical nuclear ceramic material, SiC; (ii) the evaluation of the robustness of the pulsed beam method from studies of defect generation rate effects; (iii) the measurement of the temperature dependence of defect dynamics and thermally activated defect-interaction processes by pulsed ion beam techniques; and (iv) the demonstration of alternative characterization techniques to study defect dynamics. As we describe below, all these objectives have been met.

  19. Dust particle diffusion in ion beam transport region

    Energy Technology Data Exchange (ETDEWEB)

    Miyamoto, N.; Okajima, Y.; Romero, C. F.; Kuwata, Y.; Kasuya, T.; Wada, M., E-mail: mwada@mail.doshisha.ac.jp [Graduate school of Science and Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)

    2016-02-15

    Dust particles of μm size produced by a monoplasmatron ion source are observed by a laser light scattering. The scattered light signal from an incident laser at 532 nm wavelength indicates when and where a particle passes through the ion beam transport region. As the result, dusts with the size more than 10 μm are found to be distributed in the center of the ion beam, while dusts with the size less than 10 μm size are distributed along the edge of the ion beam. Floating potential and electron temperature at beam transport region are measured by an electrostatic probe. This observation can be explained by a charge up model of the dust in the plasma boundary region.

  20. Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

    Science.gov (United States)

    Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

    2012-02-01

    Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

  1. Low energy ion beam dynamics of NANOGAN ECR ion source

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Sarvesh, E-mail: sarvesh@iuac.res.in; Mandal, A.

    2016-04-01

    A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

  2. Ion beam irradiation of ceramics at fusion relevant conditions

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1991-01-01

    Ceramic materials are required at a variety of locations in proposed fusion reactors where significant ionizing and displacive fields may be present. Energetic ion beams are a useful tool for probing the effects of irradiation on the structure and electrical properties of ceramics over a wide range of experimental conditions. The advantages and disadvantages of using ion beams to provide information on anticipated ceramic radiation effects in a fusion reactor environment are discussed. In this paper particular emphasis is placed on microstructural changes and how the high helium generation rates associated with DT fusion neutrons affect cavity swelling

  3. Broadband lasercooling of relativistic ion beams at ESR

    Energy Technology Data Exchange (ETDEWEB)

    Bussmann, Michael; Seltmann, Michael; Siebold, Matthias; Schramm, Ulrich [HZDR (Germany); Wen, Weiqiang; Zhang, Dacheng; Ma, Xinwen [IMPCAS, Lanzhou (China); Winters, Danyal; Clark, Colin; Kozhuharov, Christophor; Steck, Markus; Dimopoulou, Christina; Nolden, Fritz; Stoehlker, Thomas [GSI (Germany); Beck, Tobias; Rein, Benjamin; Walther, Thomas; Tichelmann, Sascha; Birkl, Gerhard [TU Darmstadt (Germany); Sanchez-Alarcon, Rodolfo; Ullmann, Johannes; Lochmann, Matthias; Noertershaeuser, Wilfried [GSI (Germany); Univ. Mainz (Germany)

    2013-07-01

    We present new results on laser cooling of relativistic C{sup 3+} ion beams at the Experimental Storage Ring at GSI. For the first time we could show laser cooling of bunched relativistic ion beams using fast scanning of the frequency of the cooling laser over a range larger than the momentum acceptance of the bucket. Unlike previously employed cooling schemes where the bucket frequency was scanned relatively to a fixed laser frequency, scanning of the laser frequency can be readily applied to future high energy storage rings such as HESR or SIS100 at FAIR.

  4. Hydrodynamic motion of a heavy-ion-beam-heated plasma

    International Nuclear Information System (INIS)

    Jacoby, J.; Hoffmann, D.H.H.; Mueller, R.W.; Mahrt-Olt, K.; Arnold, R.C.; Schneider, V.; Maruhn, J.

    1990-01-01

    The first experimental study is reported of a plasma produced by a heavy-ion beam. Relevant parameters for heating with heavy ions are described, temperature and density of the plasma are determined, and the hydrodynamic motion in the target induced by the beam is studied. The measured temperature and the free-electron density are compared with a two-dimensional hydrodynamic-model calculation. In accordance with the model, a radial rarefaction wave reaching the center of the target was observed and the penetration velocity of the ion beam into the xenon-gas target was measured

  5. Electromagnetic ion beam instability upstream of the earth's bow shock

    International Nuclear Information System (INIS)

    Gary, S.P.; Gosling, J.T.; Forslund, D.W.

    1981-01-01

    The linear theory of the electromagnetic ion beam instability for arbitrary angles of propagation has been studied. The parameters considered in the theory are typical of the solar wind upstream of the earth's bow shock when a 'reflected' proton beam is present. Maximum growth occurs for propagation parallel to the ambient field B, but this instability also displays significant growth at wave-vectors oblique to B, Oblique, unstable modes seem to be the likely source of the compressive magnetic fluctuations recently observed in conjunction with 'diffuse' ion population. An energetic ion beam does not directly give rise to linear growth of either ion acoustic or whistler mode instabilities

  6. Constraints on ion beam handling for intersecting beam experiments

    International Nuclear Information System (INIS)

    Kruse, T.

    1981-01-01

    The intense synchrotron radiation beams from the NSLS uv or x-ray storage rings still do not compare in monochromatized photon flux with a laser beam, a fact which becomes apparent in considering reaction rates for interaction of photon and ion beams. There are two prototypical interaction geometries, parallel and perpendicular. Calculations should properly be done in the rest frame of the ion beam; however, expected beta values are small, so the lab frame will be employed and aberration and Doppler shift effects neglected

  7. Dose Response of Alanine Detectors Irradiated with Carbon Ion Beams

    DEFF Research Database (Denmark)

    Herrmann, Rochus; Jäkel, Oliver; Palmans, Hugo

    2011-01-01

    Purpose: The dose response of the alanine detector shows a dependence on particle energy and type, when irradiated with ion beams. The purpose of this study is to investigate the response behaviour of the alanine detector in clinical carbon ion beams and compare the results with model predictions......-dose curves deviate from predictions in the peak region, most pronounced at the distal edge of the peak. Conclusions: The used model and its implementation show a good overall agreement for quasi mono energetic measurements. Deviations in depth-dose measurements are mainly attributed to uncertainties...

  8. Polarization Studies in Fast-Ion Beam Spectroscopy

    International Nuclear Information System (INIS)

    Trabert, E

    2001-01-01

    In a historical review, the observations and the insight gained from polarization studies of fast ions interacting with solid targets are presented. These began with J. Macek's recognition of zero-field quantum beats in beam-foil spectroscopy as indicating alignment, and D.G. Ellis' density operator analysis that suggested the observability of orientation when using tilted foils. Lastly H. Winter's studies of the ion-beam surface interaction at grazing incidence yielded the means to produce a high degree of nuclear orientation in ion beams

  9. Applications of capillary optics for focused ion beams

    International Nuclear Information System (INIS)

    Umezawa, Kenji

    2014-01-01

    This article introduces applications of focused ion beams (∼1 μm) with glass capillaries systems. A first report on the interaction between ion beams and glass capillaries was published in 1996. The guiding capabilities of glass capillaries were discovered due to ion reflection from inner wall of glass surfaces. Meanwhile, the similar optics have been already realized in focusing X-rays using glass capillaries. The basic technology of X-rays optics using glass capillaries had been developed in the 1980's and 1900's. Also, low energy atom scattering spectroscopy for insulator material analysis will be mentioned. (author)

  10. Overview of Light-Ion Beam Therapy

    International Nuclear Information System (INIS)

    Chu, William T.

    2006-01-01

    compared to those in conventional (photon) treatments. Wilson wrote his personal account of this pioneering work in 1997. In 1954 Cornelius Tobias and John Lawrence at the Radiation Laboratory (former E.O. Lawrence Berkeley National Laboratory) of the University of California, Berkeley performed the first therapeutic exposure of human patients to hadron (deuteron and helium ion) beams at the 184-Inch Synchrocyclotron. By 1984, or 30 years after the first proton treatment at Berkeley, programs of proton radiation treatments had opened at: University of Uppsala, Sweden, 1957; the Massachusetts General Hospital-Harvard Cyclotron Laboratory (MGH/HCL), USA, 1961; Dubna (1967), Moscow (1969) and St Petersburg (1975) in Russia; Chiba (1979) and Tsukuba (1983) in Japan; and Villigen, Switzerland, 1984. These centers used the accelerators originally constructed for nuclear physics research. The experience at these centers has confirmed the efficacy of protons and light ions in increasing the tumor dose relative to normal tissue dose, with significant improvements in local control and patient survival for several tumor sites. M.R. Raju reviewed the early clinical studies. In 1990, the Loma Linda University Medical Center in California heralded in the age of dedicated medical accelerators when it commissioned its proton therapy facility with a 250-MeV synchrotron. Since then there has been a relatively rapid increase in the number of hospital-based proton treatment centers around the world, and by 2006 there are more than a dozen commercially-built facilities in use, five new facilities under construction, and more in planning stages. In the 1950s larger synchrotrons were built in the GeV region at Brookhaven (3-GeV Cosmotron) and at Berkeley (6-GeV Bevatron), and today most of the world's largest accelerators are synchrotrons. With advances in accelerator design in the early 1970s, synchrotrons at Berkeley and Princeton accelerated ions with atomic numbers between 6 and 18, at

  11. Overview of Light-Ion Beam Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Chu, William T.

    2006-03-16

    treatment volume compared to those in conventional (photon) treatments. Wilson wrote his personal account of this pioneering work in 1997. In 1954 Cornelius Tobias and John Lawrence at the Radiation Laboratory (former E.O. Lawrence Berkeley National Laboratory) of the University of California, Berkeley performed the first therapeutic exposure of human patients to hadron (deuteron and helium ion) beams at the 184-Inch Synchrocyclotron. By 1984, or 30 years after the first proton treatment at Berkeley, programs of proton radiation treatments had opened at: University of Uppsala, Sweden, 1957; the Massachusetts General Hospital-Harvard Cyclotron Laboratory (MGH/HCL), USA, 1961; Dubna (1967), Moscow (1969) and St Petersburg (1975) in Russia; Chiba (1979) and Tsukuba (1983) in Japan; and Villigen, Switzerland, 1984. These centers used the accelerators originally constructed for nuclear physics research. The experience at these centers has confirmed the efficacy of protons and light ions in increasing the tumor dose relative to normal tissue dose, with significant improvements in local control and patient survival for several tumor sites. M.R. Raju reviewed the early clinical studies. In 1990, the Loma Linda University Medical Center in California heralded in the age of dedicated medical accelerators when it commissioned its proton therapy facility with a 250-MeV synchrotron. Since then there has been a relatively rapid increase in the number of hospital-based proton treatment centers around the world, and by 2006 there are more than a dozen commercially-built facilities in use, five new facilities under construction, and more in planning stages. In the 1950s larger synchrotrons were built in the GeV region at Brookhaven (3-GeV Cosmotron) and at Berkeley (6-GeV Bevatron), and today most of the world's largest accelerators are synchrotrons. With advances in accelerator design in the early 1970s, synchrotrons at Berkeley and Princeton accelerated ions with atomic numbers

  12. Focused ion beam systems: basics and applications

    National Research Council Canada - National Science Library

    Yao, Nan

    2007-01-01

    ..., their interaction with materials, etching, and deposition are all covered, as well as in-situ materials characterization, sample preparation, three-dimension reconstruction, and applications in biomaterials and nanotechnology. With nanostructured materials becoming increasingly important in micromechanical, electronic, and magnetic devices, this self...

  13. Crystal Collimation with Lead Ion Beams at Injection Energy in the LHC

    CERN Document Server

    Rossi, Roberto; Andreassen, Arvid; Butcher, Mark; Dionisio Barreto, Cristovao Andre; Masi, Alessandro; Mirarchi, Daniele; Montesano, Simone; Lamas Garcia, Inigo; Redaelli, Stefano; Scandale, Walter; Serrano Galvez, Pablo; Rijllart, Adriaan; Valentino, Gianluca; Galluccio, Francesca; CERN. Geneva. ATS Department

    2015-01-01

    During this MD, performed on December 2nd 2015, bent silicon crystals were tested with ion beams for a possible usage of crystal-assisted collimation. Tests were performed at injection energy, using both horizontal and vertical crystals. Ion channeling was observed for the first time with LHC beams at the record energy of 450 GeV and the channeled beams were probed with scans performed with secondary collimators. Measurements of cleaning efficiency of a crystal-based collimation system were also performed.

  14. Growth and surface morphology of ion-beam sputtered Ti-Ni thin films

    International Nuclear Information System (INIS)

    Rao, Ambati Pulla; Sunandana, C.S.

    2008-01-01

    Titanium-nickel thin films have been deposited on float glass substrates by ion beam sputtering in 100% pure argon atmosphere. Sputtering is predominant at energy region of incident ions, 1000 eV to 100 keV. The as-deposited films were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). In this paper we attempted to study the surface morphology and elemental composition through AFM and XPS, respectively. Core level as well as valence band spectra of ion-beam sputtered Ti-Ni thin films at various Ar gas rates (5, 7 and 12 sccm) show that the thin film deposited at 3 sccm possess two distinct peaks at binding energies 458.55 eV and 464.36 eV mainly due to TiO 2 . Upon increasing Ar rate oxidation of Ti-Ni is reduced and the Ti-2p peaks begin approaching those of pure elemental Ti. Here Ti-2p peaks are observed at binding energy positions of 454.7 eV and 460.5 eV. AFM results show that the average grain size and roughness decrease, upon increasing Ar gas rate, from 2.90 μm to 0.096 μm and from 16.285 nm to 1.169 nm, respectively

  15. Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

    Energy Technology Data Exchange (ETDEWEB)

    Ziani, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France); Delmotte, F., E-mail: Franck.Delmotte@InstitutOptique.fr [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Le Paven-Thivet, C. [Institut d' Electronique et de Télécommunications de Rennes (IETR) UMR-CNRS 6164, Université de Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex France (France); Meltchakov, E.; Jérome, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Roulliay, M. [Institut des Sciences Moléculaires d’Orsay UMR 8214, Univ Paris Sud, 91405 Orsay France (France); Bridou, F. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Gasc, K. [Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France)

    2014-02-03

    In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B{sub 4}C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source.

  16. Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

    International Nuclear Information System (INIS)

    Ziani, A.; Delmotte, F.; Le Paven-Thivet, C.; Meltchakov, E.; Jérome, A.; Roulliay, M.; Bridou, F.; Gasc, K.

    2014-01-01

    In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B 4 C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source

  17. Figuring process of potassium dihydrogen phosphate crystal using ion beam figuring technology.

    Science.gov (United States)

    Li, Furen; Xie, Xuhui; Tie, Guipeng; Hu, Hao; Zhou, Lin

    2017-09-01

    Currently, ion beam figuring (IBF) technology has presented many excellent performances in figuring potassium dihydrogen phosphate (KDP) crystals, such as it is a noncontact figuring process and it does not require polishing fluid. So, it is a very clean figuring process and does not introduce any impurities. However, the ion beam energy deposited on KDP crystal will heat the KDP crystal and may generate cracks on it. So, it is difficult directly using IBF technology to figure KDP crystal, as oblique incident IBF (OI-IBF) has lower heat deposition, higher removal rate, and smoother surface roughness compared to normal incident IBF. This paper studied the process of using OI-IBF to figure KDP crystal. Removal rates and removal functions at different incident angles were first investigated. Then heat depositions on a test work piece were obtained through experiments. To validate the figuring process, a KDP crystal with a size of 200  mm×200  mm×12  mm was figured by OI-IBF. After three iterations using the OI-IBF process, the surface error decreases from the initial values with PV 1.986λ RMS 0.438λ to PV 0.215λ RMS 0.035λ. Experimental results indicate that OI-IBF is feasible and effective to figure KDP crystals.

  18. Computational simulation of electron and ion beams interaction with solid high-molecular dielectrics and inorganic glasses

    International Nuclear Information System (INIS)

    Milyavskiy, V.V.

    1998-01-01

    Numerical investigation of interaction of electron beams (with the energy within the limits 100 keV--20 MeV) and ion beams (with the energy over the range 1 keV--50 MeV) with solid high-molecular dielectrics and inorganic glasses is performed. Note that the problem of interaction of electron beams with glass optical covers is especially interesting in connection with the problem of radiation protection of solar power elements on cosmic satellites and stations. For computational simulation of the above-mentioned processes a mathematical model was developed, describing the propagation of particle beams through the sample thickness, the accumulation and relaxation of volume charge and shock-wave processes, as well as the evolution of electric field in the sample. The calculation of energy deposition by electron beam in a target in the presence of nonuniform electric field was calculated with the assistance of the semiempirical procedure, formerly proposed by author of this work. Propagation of the low energy ions through the sample thickness was simulated using Pearson IV distribution. Damage distribution, ionization distribution and range distribution was taken into account. Propagation of high energy ions was calculated in the approximation of continuous deceleration. For description of hydrodynamic processes the system of equations of continuum mechanics in elastic-plastic approximation and the wide-range equation of state were used

  19. A pencil beam algorithm for helium ion beam therapy

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, Hermann; Stroebele, Julia; Schreiner, Thomas; Hirtl, Albert; Georg, Dietmar [Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); PEG MedAustron, 2700 Wiener Neustadt (Austria); Department of Nuclear Medicine, Medical University of Vienna, 1090 Vienna (Austria); Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria)

    2012-11-15

    Purpose: To develop a flexible pencil beam algorithm for helium ion beam therapy. Dose distributions were calculated using the newly developed pencil beam algorithm and validated using Monte Carlo (MC) methods. Methods: The algorithm was based on the established theory of fluence weighted elemental pencil beam (PB) kernels. Using a new real-time splitting approach, a minimization routine selects the optimal shape for each sub-beam. Dose depositions along the beam path were determined using a look-up table (LUT). Data for LUT generation were derived from MC simulations in water using GATE 6.1. For materials other than water, dose depositions were calculated by the algorithm using water-equivalent depth scaling. Lateral beam spreading caused by multiple scattering has been accounted for by implementing a non-local scattering formula developed by Gottschalk. A new nuclear correction was modelled using a Voigt function and implemented by a LUT approach. Validation simulations have been performed using a phantom filled with homogeneous materials or heterogeneous slabs of up to 3 cm. The beams were incident perpendicular to the phantoms surface with initial particle energies ranging from 50 to 250 MeV/A with a total number of 10{sup 7} ions per beam. For comparison a special evaluation software was developed calculating the gamma indices for dose distributions. Results: In homogeneous phantoms, maximum range deviations between PB and MC of less than 1.1% and differences in the width of the distal energy falloff of the Bragg-Peak from 80% to 20% of less than 0.1 mm were found. Heterogeneous phantoms using layered slabs satisfied a {gamma}-index criterion of 2%/2mm of the local value except for some single voxels. For more complex phantoms using laterally arranged bone-air slabs, the {gamma}-index criterion was exceeded in some areas giving a maximum {gamma}-index of 1.75 and 4.9% of the voxels showed {gamma}-index values larger than one. The calculation precision of the

  20. Drag of ballistic electrons by an ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Gurevich, V. L.; Muradov, M. I., E-mail: mag.muradov@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2015-12-15

    Drag of electrons of a one-dimensional ballistic nanowire by a nearby one-dimensional beam of ions is considered. We assume that the ion beam is represented by an ensemble of heavy ions of the same velocity V. The ratio of the drag current to the primary current carried by the ion beam is calculated. The drag current turns out to be a nonmonotonic function of velocity V. It has a sharp maximum for V near v{sub nF}/2, where n is the number of the uppermost electron miniband (channel) taking part in conduction and v{sub nF} is the corresponding Fermi velocity. This means that the phenomenon of ion beam drag can be used for investigation of the electron spectra of ballistic nanostructures. We note that whereas observation of the Coulomb drag between two parallel quantum wires may in general be complicated by phenomena such as tunneling and phonon drag, the Coulomb drag of electrons of a one-dimensional ballistic nanowire by an ion beam is free of such spurious effects.