Ion-induced surface modification of alloys

International Nuclear Information System (INIS)

Wiedersich, H.

1983-11-01

In addition to the accumulation of the implanted species, a considerable number of processes can affect the composition of an alloy in the surface region during ion bombardment. Collisions of energetic ions with atoms of the alloy induce local rearrangement of atoms by displacements, replacement sequences and by spontaneous migration and recombination of defects within cascades. Point defects form clusters, voids, dislocation loops and networks. Preferential sputtering of elements changes the composition of the surface. At temperatures sufficient for thermal migration of point defects, radiation-enhanced diffusion promotes alloy component redistribution within and beyond the damage layer. Fluxes of interstitials and vacancies toward the surface and into the interior of the target induce fluxes of alloying elements leading to depth-dependent compositional changes. Moreover, Gibbsian surface segregation may affect the preferential loss of alloy components by sputtering when the kinetics of equilibration of the surface composition becomes competitive with the sputtering rate. Temperature, time, current density and ion energy can be used to influence the individual processes contributing to compositional changes and, thus, produce a rich variety of composition profiles near surfaces. 42 references

A new setup for the investigation of swift heavy ion induced particle emission and surface modifications

Energy Technology Data Exchange (ETDEWEB)

Meinerzhagen, F.; Breuer, L.; Bukowska, H.; Herder, M.; Schleberger, M.; Wucher, A. [Fakultät für Physik, Universität Duisburg-Essen and Cenide, 47057 Duisburg (Germany); Bender, M.; Severin, D. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, 64291 Darmstadt (Germany); Lebius, H. [CIMAP (CEA-CNRS-ENSICAEN-UCN), 14070 Caen Cedex 5 (France)

2016-01-15

The irradiation with fast ions with kinetic energies of >10 MeV leads to the deposition of a high amount of energy along their trajectory (up to several ten keV/nm). The energy is mainly transferred to the electronic subsystem and induces different secondary processes of excitations, which result in significant material modifications. A new setup to study these ion induced effects on surfaces will be described in this paper. The setup combines a variable irradiation chamber with different techniques of surface characterizations like scanning probe microscopy, time-of-flight secondary ion, and neutral mass spectrometry, as well as low energy electron diffraction under ultra high vacuum conditions, and is mounted at a beamline of the universal linear accelerator (UNILAC) of the GSI facility in Darmstadt, Germany. Here, samples can be irradiated with high-energy ions with a total kinetic energy up to several GeVs under different angles of incidence. Our setup enables the preparation and in situ analysis of different types of sample systems ranging from metals to insulators. Time-of-flight secondary ion mass spectrometry enables us to study the chemical composition of the surface, while scanning probe microscopy allows a detailed view into the local electrical and morphological conditions of the sample surface down to atomic scales. With the new setup, particle emission during irradiation as well as persistent modifications of the surface after irradiation can thus be studied. We present first data obtained with the new setup, including a novel measuring protocol for time-of-flight mass spectrometry with the GSI UNILAC accelerator.

120 MeV Ni Ion beam induced modifications in poly (ethylene terephthalate) used in commercial bottled water

International Nuclear Information System (INIS)

Kumar, Vijay; Sonkawade, R. G.; Ali, Yasir; Dhaliwal, A. S.

2012-01-01

We report the effects of heavy ion irradiation on the optical, structural, and chemical properties of polyethylene terephthalate (PET) film used in commercial bottled water. PET bottles were exposed with 120 MeV Ni ions at fluences varying from 3 x 10 10 to 3 x 10 12 ion/cm 2 . The modifications so induced were analyzed by using UV-Vis, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy. Substantial decrease in optical band gap is observed with the increase in ion fluence. In the FTIR spectra, most of bands are decreased due the degradation of the molecular structure. XRD measurements show the decrease in peak intensity, which reflects the loss of crystallinity after irradiation.

Modification of mechanical properties of single crystal aluminum oxide by ion beam induced structural changes

International Nuclear Information System (INIS)

Ensinger, W.; Nowak, R.; Horino, Y.; Baba, K.

1993-01-01

The mechanical behaviour of ceramics is essentially determined by their surface qualities. As a surface modification technique, ion implantation provides the possibility to modify the mechanical properties of ceramics. Highly energetic ions are implanted into the near-surface region of a material and modify its composition and structure. Ions of aluminum, oxygen, nickel and tantalum were implanted into single-crystal α-aluminum oxide. Three-point bending tests showed that an increase in flexural strength of up to 30% could be obtained after implantation of aluminum and oxygen. Nickel and tantalum ion implantation increased the fracture toughness. Indentation tests with Knoop and Vickers diamonds and comparison of the lengths of the developed radial cracks showed that ion implantation leads to a reaction in cracking. The observed effects are assigned to radiation induced structural changes of the ceramic. Ion bombardment leads to radiation damage and formation of compressive stress. In case of tantalum implantation, the implanted near-surface zone becomes amorphous. These effects make the ceramic more resistant to fracture. (orig.)

Heavy ion induced DNA transfer in biological cells

International Nuclear Information System (INIS)

Vilaithong, T.; Yu, L.D.; Apavatjrut, P.; Phanchaisri, B.; Sangyuenyongpipat, S.; Anuntalabhochai, S.; Brown, I.G.

2004-01-01

Low-energy ion beam bombardment of biological materials for genetic modification purposes has experienced rapid growth in the last decade, particularly for the direct DNA transfer into living organisms including both plants and bacteria. Attempts have been made to understand the mechanisms involved in ion-bombardment-induced direct gene transfer into biological cells. Here we summarize the present status of the application of low-energy ions for genetic modification of living sample materials

100 MeV silver ions induced defects and modifications in silica glass

Energy Technology Data Exchange (ETDEWEB)

Jadhav, Vijay S.; Deore, Avinash V.; Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411007 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110067 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India)

2014-07-15

Highlights: •Study of silver ion induced defects and modifications in silica glass. •Variation in oxygen deficiency centres (ODA-II) and nonbridging oxygen hole centres (NBOHC). •Study of structural damage in terms of Urbach energy. -- Abstract: A few silica glass samples having 1 cm{sup 2} area and 0.1 cm thickness were irradiated with 100 MeV energy Ag{sup 7+} ions for the fluences ranging from 1 × 10{sup 12} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. The optical properties and the corresponding induced defects were characterised by the techniques such as UV–Visible, Photoluminescence (PL), Fourier transform infrared (FTIR), and Electron spin resonance (ESR) spectroscopy. The UV–Visible absorption spectra show two peaks, one at 5 eV and another weak peak at 5.8 eV. A peak observed at 5.0 eV corresponds to B{sub 2} band (oxygen deficiency in SiO{sub 2} network) and the peak at 5.8 eV is due to the paramagnetic defects like E′ centre. The intensities of these peaks found to be increased with increase in ion fluence. It attributes to the increase in the concentration of E′ centres and B{sub 2} band respectively. In addition, the optical band gap energy, Urbach energy and the defects concentration have been calculated using Urbach plot. The optical band gap found to be decreased from 4.65 eV to 4.39 eV and the Urbach energy found to be increased from 60 meV to 162 meV. The defect concentration of nonbridging oxygen hole centres (NBOHC) and E′ centres are found to be increased to 1.69 × 10{sup 13} cm{sup −3} and 3.134 × 10{sup 14} cm{sup −3} respectively. In PL spectra, the peak appeared at 1.92 eV and 2.7 eV envisage the defects of nonbridging oxygen hole centres and B{sub 2α} oxygen deficient centres respectively. ESR spectra also confirms the existence of E′ and NBOHC centres. FTIR spectra shows scissioning of Si-O-Si bonds and the formation of Si-H and Si-OH bonds, which supports to the co-existence of the defects induced by Ag

Ion beam induced optical and surface modification in plasmonic nanostructures

Energy Technology Data Exchange (ETDEWEB)

Singh, Udai B., E-mail: udaibhansingh123@gmail.com; Gautam, Subodh K.; Kumar, Sunil; Hooda, Sonu; Ojha, Sunil; Singh, Fouran

2016-07-15

In present work, ion irradiation induced nanostructuring has been exploited as an efficient and effective tool for synthesis of coupled plasmonics nanostructures by using 1.2 MeV Xe ions on Au/ZnO/Au system deposited on glass substrate. The results are correlated on the basis of their optical absorption, surface morphologies and enhanced sensitivity of evolved phonon modes by using UV Visible spectroscopy, scanning electron microscopy (SEM), and Raman spectroscopy (RS), respectively. Optical absorbance spectra of plasmonic nanostructures (NSs) show a decrease in band gap, which may be ascribed to the formation of defects with ion irradiation. The surface morphology reveals the formation of percolated NSs upon ion irradiation and Rutherford backscattering spectrometry (RBS) study clearly shows the formation of multilayer system. Furthermore, RS measurements on samples are studied to understand the enhanced sensitivity of ion irradiation induced phonon mode at 573 cm{sup −1} along with other modes. As compared to pristine sample, a stronger and pronounced evolution of these phonon modes is observed with further ion irradiation, which indicates localized surface plasmon results with enhanced intensity of phonon modes of Zinc oxide (ZnO) material. Thus, such plasmonic NSs can be used as surface enhanced Raman scattering (SERS) substrates.

Modification of reconstructed gamma-jets in heavy-ion collisions

Energy Technology Data Exchange (ETDEWEB)

Luo, Tan; He, Yayun; Wang, Enke [Key Laboratory of Quark and Lepton Physics (MOE) and Institute of Particle Physics, Central China Normal University, Wuhan 430079 (China); Wang, Xin-Nian [Key Laboratory of Quark and Lepton Physics (MOE) and Institute of Particle Physics, Central China Normal University, Wuhan 430079 (China); Nuclear Science Division Mailstop 70R0319, Lawrence Berkeley National Laboratory, Berkeley, CA 94740 (United States)

2016-12-15

We use the Linear Boltzmann Transport model to study gamma-triggered jets in high-energy heavy-ion collisions. Since both recoiled partons from elastic scattering and radiated gluons from inelastic processes and their further propagation are considered, the model can provide a description of not only the medium modification of reconstructed jets but also the energy flow in the underlying hydrodynamic background. In this study, we discuss the modification of jet shape and jet fragmentation function of γ-jet in central Pb+Pb collisions and in particular the energy flow induced by the jet-medium interaction.

Growth of surface structures correlated with structural and mechanical modifications of brass by laser-induced Si plasma ions implantation

Science.gov (United States)

Ahmad, Shahbaz; Bashir, Shazia; Rafique, M. Shahid; Yousaf, Daniel

2017-04-01

Laser-produced Si plasma is employed as an ion source for implantation on the brass substrate for its surface, structural, and mechanical modifications. Thomson parabola technique is employed for the measurement of energy and flux of Si ions using CR-39. In response to stepwise increase in number of laser pulses from 3000 to 12000, four brass substrates were implanted by laser-induced Si plasma ions of energy 290 keV at different fluxes ranging from 45 × 1012 to 75 × 1015 ions/cm2. SEM analysis reveals the formation of nano/micro-sized irregular shaped cavities and pores for the various ion fluxes for varying numbers of laser pulses from 3000 to 9000. At the maximum ion flux for 12,000 pulses, distinct and organized grains with hexagonal and irregular shaped morphology are revealed. X-ray diffractometer (XRD) analysis exhibits that a new phase of CuSi (311) is identified which confirms the implantation of Si ions in brass substrate. A significant decrease in mechanical properties of implanted brass, such as Yield Stress (YS), Ultimate Tensile Strength (UTS), and hardness, with increasing laser pulses from 3000 to 6000 is observed. However, with increasing laser pulses from 9000 to a maximum value of 12,000, an increase in mechanical properties like hardness, YS, and UTS is observed. The generation as well as annihilation of defects, recrystallization, and intermixing of Si precipitates with brass matrix is considered to be responsible for variations in surface, structural, and mechanical modifications of brass.

Modification of metallic corrosion by ion implantation

International Nuclear Information System (INIS)

Clayton, C.R.

1981-01-01

This review will consider some of the properties of surface alloys, formed by ion implantation, which are effective in modifying corrosion behaviour. Examples will be given of the modification of the corrosion behaviour of pure metals, steels and other engineering alloys, resulting from implantation with metals and metalloids. Emphasis will be given to the modification of anodic processes produced by ion implantation since a review will be given elsewhere in the proceedings concerning the modification of cathodic processes. (orig.)

Structural modifications of swift heavy ion irradiated PEN probed by optical and thermal measurements

International Nuclear Information System (INIS)

Devgan, Kusum; Singh, Lakhwant; Samra, Kawaljeet Singh

2013-01-01

Highlights: • The present paper reports the effect of swift heavy ion irradiation on Polyethylene Naphthalate (PEN). • Swift heavy ion irradiation introduces structural modification and degradation of PEN at different doses. • Lower irradiation doses in PEN result in modification of structural properties and higher doses lead to complete degradation. • Strong correlation between structural, optical, and thermal properties. - Abstract: The effects of swift heavy ion irradiation on the structural characteristics of Polyethylene naphthalate (PEN) were studied. Samples were irradiated in vacuum at room temperature by lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver (120 MeV) ions with the fluence in the range of 1×10 11 –3×10 12 ions cm −2 . Ion induced changes were analyzed using X-ray diffraction (XRD), Fourier transform infra red (FT-IR), UV–visible spectroscopy, thermo-gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Cross-linking was observed at lower doses resulting in modification of structural properties, however higher doses lead to the degradation of the investigated polymeric samples

Study of the modifications induced in AlxGa1-xN semiconductors under swift heavy ion irradiation

International Nuclear Information System (INIS)

Moisy, Florent

2016-01-01

Nitride semiconductors are attractive materials for optoelectronic applications. They can be subjected to heavy ions in a wide range of energy during their elaboration (improvement of their properties by ionic implantation) or during their potential use in extreme environments (outer space). This thesis focuses on the study of AlxGa1-xN alloys under heavy ion irradiation from GANIL. In GaN, the formation of Ga vacancies has been highlighted, these latter coming from elastic collisions between atoms in the material and the projectiles. On the other hand, it is possible to observe the formation of disordered ion tracks for projectiles with high electronic stopping power (Se). These tracks induce strong surface modifications, a closing of the optical bandgap, but also an extension strain along the direction parallel to the ion direction and biaxial stresses of some GPa. Concerning AlxGa1-xN alloys with x from 0.3 to 1, the points defects are more complex, and a synergy between electronic excitations and nuclear collisions is responsible of their formation. Nevertheless, the increase of the Al molar fraction (x), tends to improve the resistance to ion tracks formation in these materials. (author) [fr

Influence of tungsten microstructure and ion flux on deuterium plasma-induced surface modifications and deuterium retention

Energy Technology Data Exchange (ETDEWEB)

Buzi, Luxherta [IEK - Plasmaphysik, Forschungszentrum Juelich GmbH, Association EURATOM-FZJ, Juelich (Germany); FOM Institute DIFFER-Dutch Institute for Fundamental Energy Research (Netherlands); Ghent University (Belgium); Temmerman, Greg de [FOM Institute DIFFER-Dutch Institute for Fundamental Energy Research (Netherlands); Reinhart, Michael; Matveev, Dmitry; Unterberg, Bernhard; Wienhold, Peter; Breuer, Uwe; Kreter, Arkadi [IEK - Plasmaphysik, Forschungszentrum Juelich GmbH, Association EURATOM-FZJ, Juelich (Germany); Oost, Guido van [Ghent University (Belgium)

2014-07-01

Tungsten is to be used as plasma-facing material for the ITER divertor due to its favourable thermal properties, low erosion and fuel retention. Bombardment of tungsten by low energy ions of hydrogen isotopes, at different surface temperature, can lead to surface modifications and influence the fuel accumulation in the material. This contribution will assess the impact of material microstructure and the correlation between the particle flux, surface modifications and deuterium retention in tungsten. Tungsten samples were exposed to deuterium plasma at a surface temperature of 510 K, 670 K and 870 K, ion energy of 40 eV and ion fluence of 10{sup 26} m{sup -2}. The high and low ion flux ranges were in the order 10{sup 24} m{sup -2}s{sup -1} and 10{sup 22} m{sup -2}s{sup -1}. Depth profiling of deuterium in all the samples was done by secondary ion mass spectroscopy technique and a scanning electron microscope was used to investigate the surface modifications. Modelling of the D desorption spectra with the coupled reaction diffusion system model will be also presented.

Light-induced modification of plant plasma membrane ion transport.

Science.gov (United States)

Marten, I; Deeken, R; Hedrich, R; Roelfsema, M R G

2010-09-01

Light is not only the driving force for electron and ion transport in the thylakoid membrane, but also regulates ion transport in various other membranes of plant cells. Light-dependent changes in ion transport at the plasma membrane and associated membrane potential changes have been studied intensively over the last century. These studies, with various species and cell types, revealed that apart from regulation by chloroplasts, plasma membrane transport can be controlled by phytochromes, phototropins or channel rhodopsins. In this review, we compare light-dependent plasma membrane responses of unicellular algae (Eremosphaera and Chlamydomonas), with those of a multicellular alga (Chara), liverworts (Conocephalum), mosses (Physcomitrella) and several angiosperm cell types. Light-dependent plasma membrane responses of Eremosphaera and Chara are characterised by the dominant role of K(+) channels during membrane potential changes. In most other species, the Ca(2+)-dependent activation of plasma membrane anion channels represents a general light-triggered event. Cell type-specific responses are likely to have evolved by modification of this general response or through the development of additional light-dependent signalling pathways. Future research to elucidate these light-activated signalling chains is likely to benefit from the recent identification of S-type anion channel genes and proteins capable of regulating these channels.

Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

Science.gov (United States)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

2012-02-01

Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

Microstructural and plasmonic modifications in Ag–TiO2 and Au–TiO2 nanocomposites through ion beam irradiation

Directory of Open Access Journals (Sweden)

Venkata Sai Kiran Chakravadhanula

2014-09-01

Full Text Available The development of new fabrication techniques of plasmonic nanocomposites with specific properties is an ongoing issue in the plasmonic and nanophotonics community. In this paper we report detailed investigations on the modifications of the microstructural and plasmonic properties of metal–titania nanocomposite films induced by swift heavy ions. Au–TiO2 and Ag–TiO2 nanocomposite thin films with varying metal volume fractions were deposited by co-sputtering and were subsequently irradiated by 100 MeV Ag8+ ions at various ion fluences. The morphology of these nanocomposite thin films before and after ion beam irradiation has been investigated in detail by transmission electron microscopy studies, which showed interesting changes in the titania matrix. Additionally, interesting modifications in the plasmonic absorption behavior for both Au–TiO2 and Ag–TiO2 nanocomposites were observed, which have been discussed in terms of ion beam induced growth of nanoparticles and structural modifications in the titania matrix.

Ion beam induced modification of exchange interaction and spin-orbit coupling in the Co2FeSi Heusler compound

International Nuclear Information System (INIS)

Hamrle, J; Blomeier, S; Gaier, O; Hillebrands, B; Schneider, H; Jakob, G; Reuscher, B; Brodyanski, A; Kopnarski, M; Postava, K; Felser, C

2007-01-01

A Co 2 FeSi (CFS) film with L2 1 structure was irradiated with different fluences of 30 keV Ga + ions. Structural modifications were subsequently studied using the longitudinal (LMOKE) and quadratic (QMOKE) magneto-optical Kerr effect. Both the coercivity and the LMOKE amplitude were found to show a similar behaviour upon irradiation: they are nearly constant up to ion fluences of ∼6 x 10 15 ion cm -2 , while they decrease with further increasing fluences and finally vanish at a fluence of ∼9 x 10 16 ion cm -2 , when the sample becomes paramagnetic. However, contrary to this behaviour, the QMOKE signal nearly vanishes even for the smallest applied fluence of 3 x 10 14 ion cm -2 . We attribute this reduction of the QMOKE signal to an irradiation-induced degeneration of second or higher order spin-orbit coupling, which already happens at small fluences of 30 keV Ga + ions. On the other hand, the reduction of coercivity and LMOKE signal with high ion fluences is probably caused by a reduction of the exchange interaction within the film material

Structural modifications induced by ion irradiation and temperature in boron carbide B4C

Science.gov (United States)

Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, J.; Pradeilles, N.; Rapaud, O.; Maître, A.; Gosset, D.

2015-12-01

Already used as neutron absorber in the current French nuclear reactors, boron carbide (B4C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B4C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (Se ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B4C structure under irradiation.

Modification of PMMA/graphite nanocomposites through ion beam technique

Science.gov (United States)

Singhal, Prachi; Rattan, Sunita; Avasthi, Devesh Kumar; Tripathi, Ambuj

2013-08-01

Swift heavy ion (SHI) irradiation is a special technique for inducing physical and chemical modifications in bulk materials. In the present work, the SHI hs been used to prepare nanocomposites with homogeneously dispersed nanoparticles. The nanographite was synthesized from graphite using the intercalation-exfoliation method. PMMA Poly(methyl methacrylate)/graphite nanocomposites have been synthesized by in situ polymerization. The prepared PMMA/graphite nanocomposite films were irradiated with SHI irradiation (Ni ion beam, 80 MeV and C ion beam, 50 MeV) at a fluence of 1×1010 to 3×1012 ions/cm2. The nanocomposite films were characterized by scanning electron microscope (SEM) and were evaluated for their electrical and sensor properties. After irradiation, significant changes in surface morphology of nanocomposites were observed as evident from the SEM images, which show the presence of well-distributed nanographite platelets. The irradiated nanocomposites exhibit better electrical and sensor properties for the detection of nitroaromatics with marked improvement in sensitivity as compared with unirradiated nanocomposites.

Ion beam induced stress formation and relaxation in germanium

Energy Technology Data Exchange (ETDEWEB)

Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2013-07-15

Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

Ion beam modification of polymers

International Nuclear Information System (INIS)

Sofield, C.J.; Sugden, S.; Ing, J.; Bridwell, L.B.; Wang, Y.Q.

1993-01-01

The implantation of polymers has received considerable attention in recent years, primarily to examine doping of conducting polymers and to increase the surface conductivity (by many orders of magnitude) of highly insulating polymers. The interest in these studies was partly motivated by possible applications to microelectronic device fabrication. More recently it has been observed that ion implantation can under some conditions lead to the formation of a hard (e.g. as hard as steel, ca. 3 MPa) and conducting surface layer. This paper will review the ion beam modification of polymers resulting from ion implantation with reference to fundamental ion-solid interactions. This leads us to examine whether or not implantation of polymers is a contradiction in terms. (Author)

Fundamental aspects on ion-beam surface modification: defect production and migration processes

International Nuclear Information System (INIS)

Rehn, L.E.; Averback, R.S.; Okamoto, P.R.

1984-09-01

Ion-beam modification of metals is generating increasing scientific interest not only because it has exciting technological potential, but also because it has raised fundamental questions concerning radiation-induced diffusion processes. In addition to the implanted species, several defect production and migration mechanisms contribute to changes in the near-surface composition of an alloy during ion bombardment, e.g., atoms exchange positions via displacements and replacement sequences; preferential sputtering effects arise; radiation-enhanced diffusion and radiation-induced segregation occur. The latter two defect migration mechanisms are of particular significance since they can alter the composition to depths which are much greater than the implanted ion range. By altering various parameters such as irradiation temperature, ion mass, energy, and current density, and initial alloying distributions, a rich variety of near-surface composition profiles can be created. We have utilized changes in ion mass and energy, and irradiation temperature to distinguish defect production from defect migration effects. Experimental results are presented which provide a guide to the relative efficiencies of different mechanisms under various irradiation conditions. 46 references

In-situ investigations of surface modifications by swift heavy ions

International Nuclear Information System (INIS)

Bolse, W.; Sankarakumar, A.; Ferhati, R.; Garmatter, D.; Haag, M.; Dautel, K.; Asdi, M.; Srivastava, N.; Widmann, B.; Bauer, M.

2014-01-01

We are running a High Resolution Scanning Electron Microscope in the beam line of the UNILAC ion accelerator at the GSI Helmholtz Centre for Heavy Ion Research in Danustadt, Germany, which has recently been extended also with an EDX-system and two micro-manipulators. This instrument allows us to in-situ investigate the structural and compositional development of individual objects and structures in the μm- and nm-range under swift heavy ion bombardment, from the very first ion impact up to high fluences of the order of several 10 15 /cm 2 . The sample under investigation is irradiated in small fluence steps and in between SEM-images (and EDX-scans) of one and the same surface area are taken. The irradiation can be carried out at any incidence angle between 0° and 90° and also under stepwise or continuous azimuthal rotation of the sample. The micro-manipulator system allows us to perform additional analysis like electrical and mechanical characterization as well as substrate-free EDX at sub-μm objects. We are now also able to irradiate almost free standing sub-μm structures (pasted on a nanoscale tip or held in micro-tweezers). In this report an overview over this unique instrument and its capabilities and advantages will be given, illustrated by the results of our recent in-situ studies on ion induced modification of thin films (dewetting and self-organisation) and on shaping of sub-μm objects with swift heavy ions (by taking advantage of ion sputtering, ion hammering and ion induced visco-elastic flow). (author)

Modification of Polymer Materials by Ion Bombardment: Case Studies

International Nuclear Information System (INIS)

Bielinski, D. M.; Jagielski, J.; Lipinski, P.; Pieczynska, D.; Ostaszewska, U.; Piatkowska, A.

2009-01-01

The paper discusses possibility of application of ion beam bombardment for modification of polymers. Changes to composition, structure and morphology of the surface layer produced by the treatment and their influence on engineering and functional properties of wide range of polymer materials are presented. Special attention has been devoted to modification of tribological properties. Ion bombardment results in significant reduction of friction, which can be explained by increase of hardness and wettability of polymer materials. Hard but thin enough skin does not result in cracking but improves their abrasion resistance. Contrary to conventional chemical treatment ion beam bombardment works even for polymers hardly susceptible to modification like silicone rubber or polyolefines.

Structural modifications induced by ion irradiation and temperature in boron carbide B{sub 4}C

Energy Technology Data Exchange (ETDEWEB)

Victor, G., E-mail: g.victor@ipnl.in2p3.fr [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pipon, Y.; Bérerd, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Institut Universitaire de Technologie (IUT) Lyon-1, Université Claude Bernard Lyon 1, 69622 Villeurbanne Cedex (France); Toulhoat, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); CEA-DEN, Saclay, 91191 Gif-sur-Yvette (France); Moncoffre, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Djourelov, N. [Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee blvd, BG-1784 Sofia (Bulgaria); ELI-NP, IFIN-HH, 30 Reactorului Str, MG-6 Bucharest-Magurele (Romania); Miro, S. [CEA-DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Baillet, J. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pradeilles, N.; Rapaud, O.; Maître, A. [SPCTS, UMR CNRS 7315, Centre Européen de la céramique, University of Limoges (France); Gosset, D. [CEA, Saclay, DMN-SRMA-LA2M, 91191 Gif-sur-Yvette (France)

2015-12-15

Already used as neutron absorber in the current French nuclear reactors, boron carbide (B{sub 4}C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B{sub 4}C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (S{sub e} ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B{sub 4}C structure under irradiation.

Ion beam modification and analysis of thin YBa2Cu3O7 films

International Nuclear Information System (INIS)

Meyer, O.

1989-04-01

The application of ion beams for the analysis and modification of high Tc superconductors is reviewed. Ion backscattering and channeling spectroscopy is used to optimize the film composition and the epitaxial growth performance on various single crystalline substrates. The influence of radiation damage on the transport properties and on the structure of polycrystalline as well as of single crystalline thin films is presented. The irradiation induced metal to insulator phase transition is discussed in detail. Some applications including the use of ion implantation for structuring are summarized. (orig.) [de

Modifications induced by swift heavy ions in poly(hydroxybutyrate-hydroxyvalerate) (PHB/HV) and poly(ε-caprolactone) (PCL) films. Part 1. Thermal behaviour and molecular mass modifications

International Nuclear Information System (INIS)

Rouxhet, L.; Legras, R.

2000-01-01

Modifications induced by different energetic heavy ions in poly(ε-caprolactone) (PCL) and poly(hydroxybutyrate-hydroxyvalerate) (PHB/HV) have been investigated by the differential scanning calorimetry (DSC) and steric exclusion chromatography (SEC). A certain dose of damages, depending mainly on the charge and mass of the ion and on the intensity of irradiation, has to be overcome in order to detect any effect on PHB/HV. Actually, at a given intensity of irradiation, superior to 10 10 ions/cm 2 , the level of damage intensity increased with the increase in charge and mass of the ion. Moreover, according to the SEC results, there seems to be a critical mass and/or charge threshold above which the dominant type of damages changes. As a matter of fact, high-density irradiation with Ar 9+ and Kr 15+ resulted mainly in chain scission whereas cross-linking was dominant when irradiating the polymer with Xe 24+ and Pb 56+ . The irradiation of PCL in the conditions studied did not modify significantly the values of the melting point, the crystallisation temperature and the molecular masses of the system studied. The main effect of the irradiation detected by the DSC is the cross-linking of the polymer chains

Nano-sized surface modifications induced by the impact of slow highly charged ions - A first review

International Nuclear Information System (INIS)

Aumayr, F.; El-Said, A.S.; Meissl, W.

2008-01-01

Irradiation of crystalline solid targets with swift heavy ions can lead to the formation of latent tracks in the solid and the creation of (mostly-hillock type) nanostructures on the surface. Recently similar surface modifications with nanometer dimensions have been demonstrated for the impact of individual, very slow but highly charged ions on various surfaces. We will review the current state of this new field of research. In particular we will discuss the circumstances and conditions under which nano-sized features (hillocks or craters) on different surfaces due to impact of slow highly charged ions can be produced. The use of slow highly charged ions instead of swift heavy ions might be of considerable interest for some practical applications

Ion beam modifications of near-surface compositions in ternary alloys

International Nuclear Information System (INIS)

Lam, N.Q.; Tang, S.; Yacout, A.M.; Rehn, L.E.; Stubbins, J.F.

1990-11-01

Changes in the surface and subsurface compositions of ternary alloys during elevated-temperature sputtering with inert-gas ions were investigated. Theoretically, a comprehensive kinetic model which includes all the basic processes, such as preferential sputtering, displacement mixing, Gibbsian segregation, radiation-enhanced diffusion and radiation-induced segregation, was developed. This phenomenological approach enabled to predict the effects of each individual process or of a combination of processes on the compositional modification in model alloys. Experimentally, measurements of compositional changes at the surface of a Ag-40at%Au -- 20at%Cu alloy during 3-keV Ne + bombardment at various temperatures were made, using ion scattering spectroscopy. These measurements were interpreted on the basis of the results of theoretical modeling. 8 refs., 2 figs

Surface modifications of polypropylene by high energy carbon ions

International Nuclear Information System (INIS)

Saha, A.; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N.

2000-01-01

Polypropylene was irradiated with 12 C ions of 3.6 and 5.4 MeV energies using 3 MV tandem accelerator. The surface modification was investigated by Scanning Electron Microscopy (SEM). Optical changes were monitored by UV-VIS and FTIR spectroscopy. At the lowest ion fluence, only blister formation of various sizes (1-6 μm) was observed. Polymer when irradiated at a fluence of 1x10 14 ions/cm 2 exhibited a network structure. A comparative study on dose dependence of surface and bulk modification has been described. (author)

Modification of graphene by ion beam

Science.gov (United States)

Gawlik, G.; Ciepielewski, P.; Jagielski, J.; Baranowski, J.

2017-09-01

Ion induced defect generation in graphene was analyzed using Raman spectroscopy. A single layer graphene membrane produced by chemical vapor deposition (CVD) on copper foil and then transferred on glass substrate was subjected to helium, carbon, nitrogen, argon and krypton ions bombardment at energies from the range 25 keV to 100 keV. A density of ion induced defects and theirs mean size were estimated by using Raman measurements. Increasing number of defects generated by ion with increase of ion mass and decrease of ion energy was observed. Dependence of ion defect efficiency (defects/ion) on ion mass end energy was proportional to nuclear stopping power simulated by SRIM. No correlation between ion defect efficiency and electronic stopping power was observed.

Ion implantation induced nanotopography on titanium and bone cell adhesion

Energy Technology Data Exchange (ETDEWEB)

Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Vera, Carolina; Ayerdi-Izquierdo, Ana [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Muñoz, Roberto [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Lorenzo, Jaione; Alvarez, Noelia [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Maeztu, Miguel Ángel de [Private Practice, P° San Francisco, 43 A-1°, 20400 Tolosa (Spain)

2014-08-15

Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm{sup 2}) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

Ion implantation induced nanotopography on titanium and bone cell adhesion

International Nuclear Information System (INIS)

Braceras, Iñigo; Vera, Carolina; Ayerdi-Izquierdo, Ana; Muñoz, Roberto; Lorenzo, Jaione; Alvarez, Noelia; Maeztu, Miguel Ángel de

2014-01-01

Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm 2 ) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

Mixing induced by swift heavy ion irradiation at Fe/Si interface

Indian Academy of Sciences (India)

Unknown

Experimental results show that high electronic excitation can also induce structural modifications in metallic sys- tems similar to those in non-metallic systems. This means that all Se-dependent effects induced in different materials are probably related to some basic energy transfer mecha- nism between the incident ion and ...

Swift heavy ion irradiation induced modifications in the optical band gap and Urbach's tail in polyaniline nanofibers

International Nuclear Information System (INIS)

Banerjee, Somik; Kumar, A.

2011-01-01

Optical band gap and Urbach tail width of HCl and CSA doped polyaniline (PAni) nanofibers and the ion beam induced modifications in the band gap and Urbach's tail of the samples have been studied employing UV-Vis absorption spectroscopy. All the major bands appearing in the FTIR spectra exhibit a decrease in intensity and broadening in their band widths upon interaction with the highly energetic ion beams. This suggests that SHI irradiation induces chain-scissioning events in the PAni nanofibers. An interesting result that comes out from the FTIR analysis is a transition from the benzenoid to quinoid states in the PAni chains, which reveals that there is a decrease in the degree of conjugation in the polymer upon irradiation. Optical absorption studies indicate three direct allowed transitions at ∼2.64, 3.61 and 4.08 eV for HCl doped PAni nanofibers and at ∼2.62, 3.49 and 4.02 eV for the CSA doped PAni nanofibers. The optical band gap is found to increase with increasing ion fluence which may be attributed to the reduction in the fiber diameters upon irradiation, which is corroborated by TEM analysis. Increase in the optical band gap also points out to a decrease in the conjugation length due to the larger torsion angles between the adjacent phenyl rings of the polymer with respect to the plane of the nitrogen atoms, which is also supported by FTIR results. The Urbach tail width decreases with increasing ion fluence indicating that structural disorders are annealed out of the PAni nanofibers which is also observed from the plots of (αhν) 2 against photon energy (hν) for HCl doped PAni nanofibers. The quantum confinement effect is confirmed by fact that a band gap exhibits a linear dependence on the inverse of the square of the radius of the PAni nanofibers. Infact, the increase in the optical band gap may be a combined effect of the decrease in the Urbach band width and the quantum confinement effect.

Localized subsurface modification of materials using micro-low-energy multiple ion beamlets

Directory of Open Access Journals (Sweden)

Abhishek Chowdhury

2011-12-01

Full Text Available Generation of focused multiple ion beamlets from an intense microwave plasma source is investigated for the creation of localized subsurface modification of materials. Unlike conventional single element focused ion beam (FIB systems, the plasma source is capable of providing ion beams of multiple elements. Two types of plasma electrodes (PE are employed, one with a honeycomb structure with notched apertures and another with a 5×5 array of through apertures, both attached to the plasma source and are capable of generating focused ion beamlets (50 - 100 μm diameter in a patterned manner. Measurements of ion saturation current near the PE indicate that the plasma is uniform over an area of ∼ 7 cm2, which is further confirmed by uniformity in extracted beam current through the apertures. The ion beams are applied to investigate change in electrical sheet resistance Rs of metallic thin films in a controlled manner by varying the ionic species and beam energy. Results indicate a remarkable increase in Rs with beam energy (∼ 50 % at 1 keV for Ar ions, and with ionic species (∼ 90% for Krypton ions at 0.6 keV, when 80 nm thick copper films are irradiated by ∼2 cm diameter ion beams. Ion induced surface roughness is considered as the main mechanism for this change as confirmed by atomic force microscopy (AFM measurements. Predictions for micro-beamlet induced change in Rs are discussed. The experimental results are verified using TRIM and AXCEL-INP simulations.

Defect creation by swift heavy ions: materials modifications in the electronic stopping power regime

International Nuclear Information System (INIS)

Toulemonde, M.

1994-01-01

The material modifications by swift heavy ions in the electronic stopping power regime are puzzling question: How the energy deposited on the electrons can induced material modifications? In order to answer to this question, the modifications induced in non-radiolytic materials are described and compared to the predictions. In first part the main experimental observations is presented taking into account the irradiation parameters. Then it is shown that the initial phases of the material are very important. Amorphous materials, whatever it is a metal, a semiconductor or an insulator, are till now all sensitive to the high electronic excitation induced by the slowing down of a swift heavy ion. All oxide materials, insulators or conductors, are also sensitive even the MgO, one of most famous exceptions. Crystalline metals or semiconductors are intermediate cases: some are insensitive like Cu and Si respectively while Fe and GeS are sensitive. The main feature is the different values of the electronic stopping power threshold of material modifications. The evolution of the damage creation is described showing that the damage morphology seems to be the same whatever the material is amorphous or crystalline. In second part a try of interpretation of the experimental results will be done on the behalf of the two following models: The Coulomb spike and the thermal spike models. It will be shown that there is some agreement with limited predictions made in the framework of the Coulomb spike model. But it appears that the thermal spike model can account for most of the experimental data using only one free parameter: The electron-phonon strength which is a physical characteristic of the irradiated material. (author). 4 figs., 1 tab., 64 refs

Magnetic and topographical modifications of amorphous Co–Fe thin films induced by high energy Ag{sup 7+} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Pookat, G.; Hysen, T. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Al-Harthi, S.H.; Al-Omari, I.A. [Department of Physics, Sultan Qaboos University, Muscat, P.O. Box 36, Code 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

2013-09-01

We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co{sub 77}Fe{sub 23} thin films on silicon substrates using 100 MeV Ag{sup 7+} ions fluences of 1 × 10{sup 11} ions/cm{sup 2}, 1 × 10{sup 12} ions/cm{sup 2}, 1 × 10{sup 13} ions/cm{sup 2}, and 3 × 10{sup 13} ions/cm{sup 2}. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated.

Ninth international conference on ion beam modification of materials. Book of abstracts

International Nuclear Information System (INIS)

1995-01-01

The conference focused on new developments and current status in the use of ion beams for modification of materials including: fundamental ion beam research and secondary effects of ion beams; materials modifications and techniques; biomedical and industrial applications; low energy processes; point defects and damage, nanocrystals in insulators, plasma immersion ion implantation, molecular dynamics simulations of ion-surface interactions, ion-beam mixing of insulators, GeV ion irradiation, electro-optical materials, polymers, tribological materials, and semiconductor processing. The handbook contains the workshop's program, abstracts and an author index. Separate abstracts were prepared for all papers in this volume

Ninth international conference on ion beam modification of materials. Book of abstracts

Energy Technology Data Exchange (ETDEWEB)

NONE

1995-12-31

The conference focused on new developments and current status in the use of ion beams for modification of materials including: fundamental ion beam research and secondary effects of ion beams; materials modifications and techniques; biomedical and industrial applications; low energy processes; point defects and damage, nanocrystals in insulators, plasma immersion ion implantation, molecular dynamics simulations of ion-surface interactions, ion-beam mixing of insulators, GeV ion irradiation, electro-optical materials, polymers, tribological materials, and semiconductor processing. The handbook contains the workshop`s program, abstracts and an author index. Separate abstracts were prepared for all papers in this volume.

Error analysis and prevention of cosmic ion-induced soft errors in static CMOS RAMS

International Nuclear Information System (INIS)

Diehl, S.E.; Ochoa, A. Jr.; Dressendorfer, P.V.; Koga, R.; Kolasinski, W.A.

1982-06-01

Cosmic ray interactions with memory cells are known to cause temporary, random, bit errors in some designs. The sensitivity of polysilicon gate CMOS static RAM designs to logic upset by impinging ions has been studied using computer simulations and experimental heavy ion bombardment. Results of the simulations are confirmed by experimental upset cross-section data. Analytical models have been extended to determine and evaluate design modifications which reduce memory cell sensitivity to cosmic ions. A simple design modification, the addition of decoupling resistance in the feedback path, is shown to produce static RAMs immune to cosmic ray-induced bit errors

Surface modification technique of structural ceramics: ion implantation-assisted multi-arc ion plating

International Nuclear Information System (INIS)

Peng Zhijian; Miao Hezhuo; Si Wenjie; Qi Longhao; Li Wenzhi

2003-01-01

Through reviewing the advantages and disadvantages of the existed surface modification techniques, a new technique, ion implantation-assisted multi-arc ion plating, was proposed. Using the proposed technique, the surfaces of silicon nitride ceramics were modified by Ti ion implantation, and then three kinds of ternary coatings, (Ti,Al)N, (Ti,Zr)N and (Ti,Cr)N, were deposited on the as-implanted ceramics. The coatings prepared by this technique are of high-hardness and well adhesive to the ceramic substrates. The maximal hardness measured by nanoindentation tests is more than 40 GPa. The maximal critical load by nanoscratch tests is more than 60 mN. The cutting tools prepared by this technique with the presented coatings are of excellent performance in industrial applications. The technique may be promising for the surface modification of structural ceramics. (orig.)

MeV ion induced damage production and accumulation in silicon

International Nuclear Information System (INIS)

Suzuki, Motoyuki; Okazaki, Makoto; Shin, Kazuo; Takagi, Ikuji; Yoshida, Koji

1993-01-01

Measurement and analysis were made for radiation damages in silicon induced by MeV ions. A single crystal silicon was bombarded by 800 keV O + and 700 keV Si + with the dose from 2x10 15 up to 8x10 15 cm -2 . And defects induced by the ion bombardments were observed by the channeling method. Some new modifications were made to the analysis of the channeling RBS spectrum so that the accuracy of the unfolded defect distribution may be improved. A new model of point-defect clustering and amorphous formation was proposed, which well reproduced the observed defect distribution in silicon. (author)

Physico-chemical modification of polyethersulphone induced by high energy proton, C+ and Ne6+ ions

International Nuclear Information System (INIS)

Vinodh Kumar, S.; Biswavarathi, V.; Jal, P.; Dey, K.; Krishna, J.B.M.; Saha, A.

2004-01-01

Polyehersulphone (PES) was irradiated with 4 MeV proton, 3.6 MeV C + and 145 MeV Ne 6+ ions at different ion fluences. The ion induced spectral changes were analyzed by UV-visible and fluorescence spectroscopy. The increase in optical absorption, which shifts gradually from near UV to the visible region with increase in fluence for the three different types of bombarding ions was observed. A significant loss in fluorescence intensity with increase in fluence for three different ions was observed. (author)

Chemical composition of waterfall-induced air ions: Spectrometry vs. simulations

Energy Technology Data Exchange (ETDEWEB)

Parts, T.-E.; Luts, A. [Tartu Univ. (Estonia). Dept. of Environmental Physics; Laakso, L.; Hirsikko, A.; Groenholm, T.; Kulmala, M. [Helsinki Univ. (Finland). Dept. of Physical Sciences

2007-07-01

Our measurements of ion size distributions near a waterfall provided new evidence for a waterfall-induced modification of air ion sizes. The ion size spectrum near a waterfall permanently differs from that in ordinary tropospheric air. In this paper we investigated the near-waterfall air ions chemical nature in detail. We carried out a simulation series of air small negative ion evolution, proposing that falling water, as a new environmental component, increases the concentration of OH{sup -} cluster ions. The produced OH{sup -} ions were employed as an extra input for our ion evolution model. The presence of additional OH{sup -} ions resulted in a decrease of typically model-provided NO{sub 3}{sup -} and/or HSO{sub 4}{sup -} cluster ion concentrations and an increase of the abundance of HCO{sub 3}{sup -} cluster ions. Near the waterfall the latter ions became dominant in our simulations. (orig.)

High-current heavy-ion accelerator system and its application to material modification

International Nuclear Information System (INIS)

Kishimoto, Naoki; Takeda, Yoshihiko; Lee, C.G.; Umeda, Naoki; Okubo, Nariaki; Iwamoto, Eiji

2001-01-01

A high-current heavy-ion accelerator system has been developed to realize intense particle fluxes for material modification. The facility of a tandem accelerator attained 1 mA-class ion current both for negative low-energy ions and positive high-energy ions. The negative ion source of the key device is of the plasma-sputter type, equipped with mutli-cusp magnets and Cs supply. The intense negative ions are either directly used for material irradiation at 60 keV or further accelerated up to 6 MeV after charge transformation. Application of negative ions, which alleviates surface charging, enables us to conduct low-energy high-current irradiation on insulating substrates. Since positive ions above the MeV range are irrelevant for Coulomb repulsion, the facility as a whole meets the needs of high-current irradiation onto insulators over a wide energy range. Application of high flux ions provides technological merits not only for efficient implantation but also for essentially different material kinetics, which may become an important tool of material modification. Other advantages of the system are co-irradiation by intense laser and in-situ detection of kinetic processes. For examples of material modifications, we present nanoparticle fabrication in insulators, and synergistic phenomena by co-irradiation due to ions and photons. (author)

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

International Nuclear Information System (INIS)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-01-01

Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al_2O_3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Ions-induced nanostructuration: effect of specific ionic adsorption on hydrophobic polymer surfaces.

Science.gov (United States)

Siretanu, Igor; Chapel, Jean-Paul; Bastos-González, Delfi; Drummond, Carlos

2013-06-06

The effect of surface charges on the ionic distribution in close proximity to an interface has been extensively studied. On the contrary, the influence of ions (from dissolved salts) on deformable interfaces has been barely investigated. Ions can adsorb from aqueous solutions on hydrophobic surfaces, generating forces that can induce long-lasting deformation of glassy polymer films, a process called ion-induced polymer nanostructuration, IPN. We have found that this process is ion-specific; larger surface modifications are observed in the presence of water ions and hydrophobic and amphiphilic ions. Surface structuration is also observed in the presence of certain salts of lithium. We have used streaming potential and atomic force microscopy to study the effect of dissolved ions on the surface properties of polystyrene films, finding a good correlation between ionic adsorption and IPN. Our results also suggest that the presence of strongly hydrated lithium promotes the interaction of anions with polystyrene surfaces and more generally with hydrophobic polymer surfaces, triggering then the IPN process.

A simple ion implanter for material modifications in agriculture and gemmology

Science.gov (United States)

Singkarat, S.; Wijaikhum, A.; Suwannakachorn, D.; Tippawan, U.; Intarasiri, S.; Bootkul, D.; Phanchaisri, B.; Techarung, J.; Rhodes, M. W.; Suwankosum, R.; Rattanarin, S.; Yu, L. D.

2015-12-01

In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X-Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

A simple ion implanter for material modifications in agriculture and gemmology

International Nuclear Information System (INIS)

Singkarat, S.; Wijaikhum, A.; Suwannakachorn, D.; Tippawan, U.; Intarasiri, S.; Bootkul, D.; Phanchaisri, B.; Techarung, J.; Rhodes, M.W.; Suwankosum, R.; Rattanarin, S.; Yu, L.D.

2015-01-01

In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X–Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

A simple ion implanter for material modifications in agriculture and gemmology

Energy Technology Data Exchange (ETDEWEB)

Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Intarasiri, S. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D. [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Phanchaisri, B.; Techarung, J. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Rhodes, M.W.; Suwankosum, R.; Rattanarin, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2015-12-15

In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X–Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

Energy Technology Data Exchange (ETDEWEB)

Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

2015-12-15

Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Modification of thin film properties by ion bombardment during deposition

International Nuclear Information System (INIS)

Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

1984-01-01

Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

Surface modification of multilayer graphene using Ga ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shao, Ying; Ge, Daohan; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Qizhi [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State key laboratory of Robotics, Chinese Academy of Sciences, Shengyang 110000 (China)

2015-04-28

The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

Science.gov (United States)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-12-01

Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Ion beam induced effects on the ferromagnetism in Pd nanoparticles

International Nuclear Information System (INIS)

Kulriya, P. K.; Mehta, B. R.; Agarwal, D. C.; Agarwal, Kanika; Kumar, Praveen; Shivaprasad, S. M.; Avasthi, D. K.

2012-01-01

Present study demonstrates the role of metal-insulator interface and ion irradiation induced defects on the ferromagnetic properties of the non-magnetic materials. Magnetic properties of the Pd nanoparticles(NPs) embedded in the a-silica matrix synthesized using atom beam sputtering technique, were determined using SQUID magnetometry measurements which showed that ferromagnetic response of Pd increased by 3.5 times on swift heavy ion(SHI) irradiation. The ferromagnetic behavior of the as-deposited Pd NPs is due to strain induced by the surrounding matrix and modification in the electronic structure at the Pd-silica interface as revealed by insitu XRD and XPS investigations, respectively. The defects created by the SHI bombardment are responsible for enhancement of the magnetization in the Pd NPs.

Modification and structuring of conducting polymer films on insulating substrates by ion beam treatment

International Nuclear Information System (INIS)

Asmus, T.; Wolf, Gerhard K.

2000-01-01

Besides the commonly used procedures of UV-, X-ray and electron beam lithography, surface structuring by ion beam processes represents an alternative route to receive patterns in the nanometre-micrometre scale. In this work we focused on changes of surface properties of the polymer materials induced by ion irradiation and on reproducing hexagonal and square patterns in the micrometre scale. To achieve a better understanding of modification and structuring of insulating and conducting polymers by ion beam treatment we investigated effects of 14 keV Ar + bombardment on thin films of doped conducting polyethoxithiophene (PEOT) and polyethylenedioxithiophene (PEDT) on polyethersulfone (PES) as insulating substrate within the fluence range from 10 14 to 10 17 ions/cm 2 . Changes of surface properties like wettability, solubility, topology and electrochemical behaviour have been studied by contact angle technique, AFM/LFM, cyclovoltammetry and electrochemical microelectrode. By irradiation through copper masks structured patterns were achieved. These patterns can be converted by galvanic or electroless copper deposition in structured metal layers

Laser-induced charge exchange in ion-atom collisions

International Nuclear Information System (INIS)

Riera, A.

1986-01-01

The theory of laser-induced charge transfer (LICT) in ion-atom collisions is presented for the range of impact energies in which a quasimolecular description is appropriate. For each relative orientation of the AC field, LICT cross sections can be obtained with trivial modifications of standard programs. Simpler, perturbative expressions for the orientation-averaged cross sections are accurate for I v -1 6 W s cm -3 , and the analytical Landau-Zener perturbative expression often provides good estimates for these cross sections. The practical advantages of the dressed state formalism as an alternative approach are critically examined, and the general characteristics of LICT cross sections in multicharged ion-atom collisions are shown with the help of an example. (Auth.)

Ultralow energy ion beam surface modification of low density polyethylene.

Science.gov (United States)

Shenton, Martyn J; Bradley, James W; van den Berg, Jaap A; Armour, David G; Stevens, Gary C

2005-12-01

Ultralow energy Ar+ and O+ ion beam irradiation of low density polyethylene has been carried out under controlled dose and monoenergetic conditions. XPS of Ar+-treated surfaces exposed to ambient atmosphere show that the bombardment of 50 eV Ar+ ions at a total dose of 10(16) cm(-2) gives rise to very reactive surfaces with oxygen incorporation at about 50% of the species present in the upper surface layer. Using pure O+ beam irradiation, comparatively low O incorporation is achieved without exposure to atmosphere (approximately 13% O in the upper surface). However, if the surface is activated by Ar+ pretreatment, then large oxygen contents can be achieved under subsequent O+ irradiation (up to 48% O). The results show that for very low energy (20 eV) oxygen ions there is a dose threshold of about 5 x 10(15) cm(-2) before surface oxygen incorporation is observed. It appears that, for both Ar+ and O+ ions in this regime, the degree of surface modification is only very weakly dependent on the ion energy. The results suggest that in the nonequilibrium plasma treatment of polymers, where the ion flux is typically 10(18) m(-2) s(-1), low energy ions (<50 eV) may be responsible for surface chemical modification.

60 keV Ar⁺-ion induced modification of microstructural, compositional, and vibrational properties of InSb

Energy Technology Data Exchange (ETDEWEB)

Datta, D. P.; Garg, S. K.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751005 (India); Satpati, B. [Surface Physics and Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Sahoo, P. K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 203207 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

2014-10-14

Room temperature irradiation of InSb(111) by 60 keV Ar⁺-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×10¹⁷ to 3×10¹⁸ ions cm⁻². While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In₂O₃ and Sb₂O₃ phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

Modifications induced by swift heavy ions on poly(hydroxybutyrate-hydroxyvalerate) (PHB/HV) and poly(ε-caprolactone) (PCL). Part 2. Radicals characterization

International Nuclear Information System (INIS)

Rouxhet, L.; Mestdagh, M.; Legras, R.

2000-01-01

Modifications induced by different energetic heavy ions ( 40 Ar 9+ , 80 Kr 15+ , 129 Xe 24+ , 208 Pb 53+ and 208 Pb 56+ ) on poly(ε-caprolactone) (PCL) and poly(hydroxybutyrate-hydroxyvalerate) (PHB/HV) have been investigated by electron spin resonance (ESR). Indeed, film irradiation by heavy ions leads to, among other phenomena, the formation of radicals in the ion tracks. Thanks to ESR, it is possible to detect these radicals and to identify them or at least to characterize them by following the evolution of the radical signal as a function of parameters, like temperature, or the kinetic of disappearance of the radical species at ambient temperature in vacuum or ambient atmosphere. This study confirmed the generation of radicals by the irradiation of PHB/HV samples with energetic heavy ions reported in the literature. The study on PCL was not pursued after a few preliminary studies, revealing the presence of an ESR signal in the non-irradiated sample. Electronic stopping power has a major influence on radical decrease at ambient temperature. The ion used for the irradiation did not modify very much the radical signal and the evolution of the radicalar signal intensity with temperature. Different reasoning and experiments revealed that the glass transition temperature is a key temperature above which irreversible recombinations of the most stable radicals take place. A simulation study indicated that the most stable radical produced was probably a tertiary radical formed by the stabilization of the secondary radical resulting from the abstraction of a highly mobile hydrogen adjacent to the carbonyl

Redox Active Transition Metal ions Make Melanin Susceptible to Chemical Degradation Induced by Organic Peroxide.

Science.gov (United States)

Zadlo, Andrzej; Pilat, Anna; Sarna, Michal; Pawlak, Anna; Sarna, Tadeusz

2017-12-01

With aging, retinal pigment epithelium melanosomes, by fusion with the age pigment lipofuscin, form complex granules called melanolipofuscin. Lipofuscin granules may contain oxidized proteins and lipid hydroperoxides, which in melanolipofuscin could chemically modify melanin polymer, while transition metal ions present in melanin can accelerate such oxidative modifications. The aim of this research was to examine the effect of selected transition metal ions on melanin susceptibility to chemical modification induced by the water-soluble tert-butyl hydroperoxide used as an oxidizing agent. Synthetic melanin obtained by DOPA autooxidation and melanosomes isolated from bovine retinal pigment epithelium were analyzed. To monitor tert-butyl hydroperoxide-induced oxidative changes of DMa and BMs, electron paramagnetic resonance spectroscopy, UV-vis absorption spectroscopy, dynamic light scattering, atomic force microscopy and electron paramagnetic resonance oximetry were employed. These measurements revealed that both copper and iron ions accelerated chemical degradation induced by tert-butyl hydroperoxide, while zinc ions had no effect. Strong prooxidant action was detected only in the case of melanosomes and melanin degraded in the presence of iron. It can be postulated that similar chemical processes, if they occur in situ in melanolipofuscin granules of the human retinal pigment epithelium, would modify antioxidant properties of melanin and its reactivity.

Some high-current ion sources for materials modification

International Nuclear Information System (INIS)

Taylor, T.

1989-01-01

Ion sources for materials modification have evolved through three distinct generations. The first generation was adopted from research accelerators. These cold-cathode plasma-discharge devices generate beam currents of less than 100 μA. The hot-cathode plasma-discharge ion sources, originally developed for isotope separation, comprise the second generation. They produce between 100 μA and 10 mA of beam current. The third generation ion sources give beam currents in excess of 10 mA. This technology, transferred from industrial accelerators, has already made SIMOX (Separation by IMplanted OXygen) into a commercially viable semiconductor process and promises to do the same for ion implantation of metals and insulators. The author focuses on the third generation technology that will play a key role in the future of ion implantation. 10 refs.; 5 figs.; 2 tabs

In-situ capability of ion beam modification and characterization of materials at Los Alamos National Laboratory

International Nuclear Information System (INIS)

Yu, N.; Nastasi, M.; Tesmer, J.R.; Hollander, M.G.; Evans, C.R.; Maggiore, C.J.; Levine, T.E.

1994-01-01

The capability of in-situ ion beam modification and characterization of materials developed at Los Alamos National Laboratory is described. A beam-line from a 3 MV tandem accelerator and a beam-line from a 200 kV ion implanter are joined together in an in-situ target chamber. The chamber is equipped with a cold and hot sample stage with a temperature range from -100 to 500 C. The angular (sample spin and basal rotation) motions and translational motions of the sample stage are controlled by a multi-axis goniometer. This chamber provides a unique capability to conduct a temperature dependent experiment of ion irradiation and sequential backscattering and channeling analysis. The efficiency and reliability of in-situ ion beam techniques are demonstrated by two examples, irradiation damage in (100) MgAl 2 O 4 spinel crystals and ion-beam-induced densification of zirconia sol-gel thin films

Reorientation of the crystalline planes in confined single crystal nickel nanorods induced by heavy ion irradiation

International Nuclear Information System (INIS)

Misra, Abha; Tyagi, Pawan K.; Rai, Padmnabh; Misra, D. S.; Ghatak, Jay; Satyam, P. V.; Avasthi, D. K.

2006-01-01

In a recent letter Tyagi et al. [Appl. Phys. Lett. 86, 253110 (2005)] have reported the special orientation of nickel planes inside multiwalled carbon nanotubes (MWCNTs) with respect to the tube axis. Heavy ion irradiation has been performed with 1.5 MeV Au 2+ and 100 MeV Au 7+ ions on these nickel filled MWCNTs at fluences ranging from 10 12 to 10 15 ions/cm 2 at room temperature. Ion-induced modifications have been studied using high-resolution transmission electron microscopy. The diffraction pattern and the lattice imaging showed the presence of ion-induced planar defects on the tube walls and completely amorphized encapsulated nickel nanorods. The results are discussed in terms of thermal spike model

Plasma immersion surface modification with metal ion plasma

International Nuclear Information System (INIS)

Brown, I.G.; Yu, K.M.; Godechot, X.

1991-04-01

We describe here a novel technique for surface modification in which metal plasma is employed and by which various blends of plasma deposition and ion implantation can be obtained. The new technique is a variation of the plasma immersion technique described by Conrad and co-workers. When a substrate is immersed in a metal plasma, the plasma that condenses on the substrate remains there as a film, and when the substrate is then implanted, qualitatively different processes can follow, including' conventional' high energy ion implantation, recoil implantation, ion beam mixing, ion beam assisted deposition, and metallic thin film and multilayer fabrication with or without species mixing. Multiple metal plasma guns can be used with different metal ion species, films can be bonded to the substrate through ion beam mixing at the interface, and multilayer structures can be tailored with graded or abrupt interfaces. We have fabricated several different kinds of modified surface layers in this way. 22 refs., 4 figs

Ion-beam modification of properties of metals and alloys

International Nuclear Information System (INIS)

Khodasevich, V.V.; Uglov, V.V.; Ponaryadov, V.V.; Zhukova, S.I.

2002-01-01

Physical fundaments for ion-beam modification and plasma-vacuum synthesis of new types of coatings and compounds in technically important metals and alloys were development as well as corresponding installation and technologies were created. (authors)

Induction of surface modification of polytetrafluoroethylene with proton ion beams

Energy Technology Data Exchange (ETDEWEB)

Noh, I S; Kim, H R; Choi, Y J; Park, H S [Seoul National Univ. of Technology, Seoul (Korea, Republic of)

2007-04-15

Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

Induction of surface modification of polytetrafluoroethylene with proton ion beams

International Nuclear Information System (INIS)

Noh, I. S.; Kim, H. R.; Choi, Y. J.; Park, H. S.

2007-04-01

Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

Swift heavy ions induced surface modifications in Ag-polypyrrole composite films synthesized by an electrochemical route

International Nuclear Information System (INIS)

Kumar, Vijay; Ali, Yasir; Sharma, Kashma; Kumar, Vinod; Sonkawade, R.G.; Dhaliwal, A.S.; Swart, H.C.

2014-01-01

Highlights: • Two steps electrochemical synthesis for the fabrication of Ag-polypyrrole composite films. • Surface modifications by swift heavy ion beam. • SEM image shows the formation of craters and humps after irradiation. • Detailed structural analysis by Raman spectroscopy. - Abstract: The general aim of this work was to study the effects of swift heavy ions on the properties of electrochemically synthesized Ag-polypyrrole composite thin films. Initially, polypyrrole (PPy) films were electrochemically synthesized on indium tin oxide coated glass surfaces using a chronopotentiometery technique, at optimized process conditions. The prepared PPy films have functioned as working electrodes for the decoration of submicron Ag particles on the surface of the PPy films through a cyclicvoltammetry technique. Towards probing the effect of swift heavy ion irradiation on the structural and morphological properties, the composite films were subjected to a 40 MeV Li 3+ ion beam irradiation for various fluences (1 × 10 11 , 1 × 10 12 and 1 × 10 13 ions/cm 2 ). Comparative microstructural investigations were carried out after the different ion fluences using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy and micro-Raman spectroscopy techniques. Raman and SEM studies revealed that the structure of the films became disordered after irradiation. The SEM studies of irradiated composite films show significant changes in their surface morphologies. The surface was smoother at lower fluence but craters were observed at higher fluence

Swift heavy ions induced surface modifications in Ag-polypyrrole composite films synthesized by an electrochemical route

Energy Technology Data Exchange (ETDEWEB)

Kumar, Vijay, E-mail: vijays_phy@rediffmail.com [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Ali, Yasir [Department of Physics, Sant Longowal Institute of Engineering and Technology, Longowal, District Sangrur 148106, Punjab (India); Sharma, Kashma [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Department of Chemistry, Shoolini University of Biotechnology and Management Sciences, Solan 173212 (India); Kumar, Vinod [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Sonkawade, R.G. [Inter University Accelerator Center, Aruna Asif Ali Marg, New Delhi 110067 (India); Dhaliwal, A.S. [Department of Physics, Sant Longowal Institute of Engineering and Technology, Longowal, District Sangrur 148106, Punjab (India); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa)

2014-03-15

Highlights: • Two steps electrochemical synthesis for the fabrication of Ag-polypyrrole composite films. • Surface modifications by swift heavy ion beam. • SEM image shows the formation of craters and humps after irradiation. • Detailed structural analysis by Raman spectroscopy. - Abstract: The general aim of this work was to study the effects of swift heavy ions on the properties of electrochemically synthesized Ag-polypyrrole composite thin films. Initially, polypyrrole (PPy) films were electrochemically synthesized on indium tin oxide coated glass surfaces using a chronopotentiometery technique, at optimized process conditions. The prepared PPy films have functioned as working electrodes for the decoration of submicron Ag particles on the surface of the PPy films through a cyclicvoltammetry technique. Towards probing the effect of swift heavy ion irradiation on the structural and morphological properties, the composite films were subjected to a 40 MeV Li{sup 3+} ion beam irradiation for various fluences (1 × 10{sup 11}, 1 × 10{sup 12} and 1 × 10{sup 13} ions/cm{sup 2}). Comparative microstructural investigations were carried out after the different ion fluences using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy and micro-Raman spectroscopy techniques. Raman and SEM studies revealed that the structure of the films became disordered after irradiation. The SEM studies of irradiated composite films show significant changes in their surface morphologies. The surface was smoother at lower fluence but craters were observed at higher fluence.

Possible Diamond-Like Nanoscale Structures Induced by Slow Highly-Charged Ions on Graphite (HOPG)

Energy Technology Data Exchange (ETDEWEB)

Sideras-Haddad, E.; Schenkel, T.; Shrivastava, S.; Makgato, T.; Batra, A.; Weis, C. D.; Persaud, A.; Erasmus, R.; Mwakikunga, B.

2009-01-06

The interaction between slow highly-charged ions (SHCI) of different charge states from an electron-beam ion trap and highly oriented pyrolytic graphite (HOPG) surfaces is studied in terms of modification of electronic states at single-ion impact nanosizeareas. Results are presented from AFM/STM analysis of the induced-surface topological features combined with Raman spectroscopy. I-V characteristics for a number of different impact regions were measured with STM and the results argue for possible formation of diamond-like nanoscale structures at the impact sites.

Modification of ion chromatograph for analyses of radioactive samples

International Nuclear Information System (INIS)

Curfman, L.L.; Johnson, S.J.

1979-01-01

In ion chromatographic analysis, the sample is injected through a sample loop onto an analytical column where separation occurs. The sample then passes through a suppressor column to remove or neutralize background ions. A flow-through conductivity cell is used as a detector. Depending upon column and eluent selection, ion chromatography can be used for anion or cation analyses. Ion chromatography has proven to be a versatile analytical tool for the analysis of anions in Hanford waste samples. These radioactive samples range from caustic high salt solutions to hydrochloric acid dissolutions of insoluble sludges. Instrument modifications which provide safe and convenient handling of these samples without lengthening analysis time or altering instrument performance are described

Ion beam modification of thermal stress resistance of MgO single crystals with different crystallographic faces

International Nuclear Information System (INIS)

Gurarie, V.N.; Otsuka, P.H.; Williams, J.S.; Conway, M.J.

2000-01-01

Ion beam modification of thermal shock stress resistance of MgO single crystals with various crystallographic faces is investigated. The most stable crystal faces in terms of stress and damage resistance are established. Ion implantation is shown to reduce the temperature threshold of fracture for all crystal faces tested. The (111) face is demonstrated to be of highest stability compared to (110) and (100) faces in both implanted and unimplanted crystals. At the same time ion implantation substantially increases the microcrack density for all the faces tested and reduces the degree of fracture damage following thermal shock. The theoretical resistance parameters for various crystal faces are calculated using the continuum mechanics approach. The results are discussed on the basis of fracture mechanics principles and the effect of the implantation-induced lattice damage on crack nucleation

Materials analysis by ion backscattering and channeling. Materials modification by ion irradiation and implementation

International Nuclear Information System (INIS)

Meyer, O.

1984-08-01

A description will be given of the basic processes occuring during ion implantation and ion beam analyses. The usefulness of the backscattering and channeling technique is demonstrated by a discussion of the applications to thin film analysis, studies of diffusion and reactions in thin films, lattice location investigations, disorder analysis and surface studies. Ion implantation is a valuable research tool in metallurgy. The process operates very far from equilibrium conditions and thus will influence near surface properties in a unique way. The observed modifications are related to special microscopic structures which will be considered in detail. (orig.) [de

Heavy ion irradiation induced effects in Ni3N/Al bilayers

International Nuclear Information System (INIS)

Dhar, S.; Rissanen, L.; Engel, K.; Wenderoth, M.; Lieb, K.P.

2001-01-01

The article reports on the Xe ion beam irradiation studies of Ni 3 N/Al bilayers at 80 K. The ion-induced modifications were monitored by Rutherford backscattering (RBS), resonant nuclear reaction analysis (RNRA), X-ray diffraction (XRD) and atomic force microscopy (AFM). We found preferential loss of nitrogen from the surface region of the Ni 3 N top layers. The surface roughness Δσ S and the interface broadening variance Δσ int 2 increase linearly with the Xe ion fluence PHI. The experimental mixing rate of Δσ 2 /PHI=1.8 nm 4 is explained by considering an enhancement of ballistic mixing due to chemical reactions at the interface

Computer simulation of structural modifications induced by highly energetic ions in uranium dioxide

International Nuclear Information System (INIS)

Sasajima, Y.; Osada, T.; Ishikawa, N.; Iwase, A.

2013-01-01

The structural modification caused by the high-energy-ion irradiation of single-crystalline uranium dioxide was simulated by the molecular dynamics method. As the initial condition, high kinetic energy was supplied to the individual atoms within a cylindrical region of nanometer-order radius located in the center of the specimen. The potential proposed by Basak et al. [C.B. Basak, A.K. Sengupta, H.S. Kamath, J. Alloys Compd. 360 (2003) 210–216] was utilized to calculate interaction between atoms. The supplied kinetic energy was first spent to change the crystal structure into an amorphous one within a short period of about 0.3 ps, then it dissipated in the specimen. The amorphous track radius R a was determined as a function of the effective stopping power gS e , i.e., the kinetic energy of atoms per unit length created by ion irradiation (S e : electronic stopping power, g: energy transfer ratio from stopping power to lattice vibration energy). It was found that the relationship between R a and gS e follows the relation R a 2 =aln(gS e )+b. Compared to the case of Si and β-cristobalite single crystals, it was harder to produce amorphous track because of the long range interaction between U atoms

Modification of graphene by ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Bukowska, Hanna; Akcoeltekin, Sevilay; El Kharrazi, Mourad; Schleberger, Marika [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Osmani, Orkhan [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Technische Universitaet Kaiserslautern, Fachbereich Physik, Gottlieb-Daimler-Strasse, Gebaeude 47, 67663 Kaiserslautern (Germany)

2010-07-01

Ion irradiation can be used to modify surfaces on the nanometer scale. We investigate graphene on different insulator (SrTiO{sub 3}, TiO{sub 2}, and Al{sub 2}O{sub 3}) and semiconductor (SiO{sub 2}) substrates. The bombardment of those target surfaces with swift heavy ions under grazing angle of incidence creates chains of nanodots on the substrate and folds graphene to typical origami-like structures. The shape of the folded graphene seems to depend on the length of the tracks. The length can be controlled by the angle of incidence. From the analysis of atomic force microscopy measurements, we classify the different types of modifications, with the aim to determine the relationship between chain length and origami shape. Further more we want to develop a theoretical understanding of the physical processes leading to the folding.

Surface modification of metals by ion implantation

International Nuclear Information System (INIS)

Iwaki, Masaya

1988-01-01

Ion implantation in metals has attracted the attention as a useful technology for the formation of new metastable alloys and compounds in metal surface layers without thermal equilibrium. Current studies of metal surface modification by ion implantation with high fluences have expanded from basic research areas and to industrial applications for the improvement of life time of tools. Many results suggest that the high fluence implantation produces the new surface layers with un-expected microscopic characteristics and macroscopic properties due to implant particles, radiation damage, sputtering, and knock-on doping. In this report, the composition, structure and chemical bonding state in surface layers of iron, iron-based alloy and aluminum sheets implanted with high fluences have been investigated by means of secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Tribological properties such as hardness, friction and wear are introduced. (author)

Plasma immersion ion implantation for the efficient surface modification of medical materials

International Nuclear Information System (INIS)

Slabodchikov, Vladimir A.; Borisov, Dmitry P.; Kuznetsov, Vladimir M.

2015-01-01

The paper reports on a new method of plasma immersion ion implantation for the surface modification of medical materials using the example of nickel-titanium (NiTi) alloys much used for manufacturing medical implants. The chemical composition and surface properties of NiTi alloys doped with silicon by conventional ion implantation and by the proposed plasma immersion method are compared. It is shown that the new plasma immersion method is more efficient than conventional ion beam treatment and provides Si implantation into NiTi surface layers through a depth of a hundred nanometers at low bias voltages (400 V) and temperatures (≤150°C) of the substrate. The research results suggest that the chemical composition and surface properties of materials required for medicine, e.g., NiTi alloys, can be successfully attained through modification by the proposed method of plasma immersion ion implantation and by other methods based on the proposed vacuum equipment without using any conventional ion beam treatment

Surface modification of polymeric substrates by plasma-based ion implantation

Science.gov (United States)

Okuji, S.; Sekiya, M.; Nakabayashi, M.; Endo, H.; Sakudo, N.; Nagai, K.

2006-01-01

Plasma-based ion implantation (PBII) as a tool for polymer modification is studied. Polymeric films have good performances for flexible use, such as food packaging or electronic devices. Compared with inorganic rigid materials, polymers generally have large permeability for gases and moisture, which causes packaged contents and devices to degrade. In order to add a barrier function, surface of polymeric films are modified by PBII. One of the advantageous features of this method over deposition is that the modified surface does not have peeling problem. Besides, micro-cracks due to mechanical stress in the modified layer can be decreased. From the standpoint of mass production, conventional ion implantation that needs low-pressure environment of less than 10-3 Pa is not suitable for continuous large-area processing, while PBII works at rather higher pressure of several Pa. In terms of issues mentioned above, PBII is one of the most expected techniques for modification on flexible substrates. However, the mechanism how the barrier function appears by ion implantation is not well explained so far. In this study, various kinds of polymeric films, including polyethyleneterephthalate (PET), are modified by PBII and their barrier characteristics that depend on the ion dose are evaluated. In order to investigate correlations of the barrier function with implanted ions, modified surface is analyzed with X-ray photoelectron spectroscopy (XPS). It is assumed that the diffusion and sorption coefficients are changed by ion implantation, resulting in higher barrier function.

Surface modification of polymeric substrates by plasma-based ion implantation

International Nuclear Information System (INIS)

Okuji, S.; Sekiya, M.; Nakabayashi, M.; Endo, H.; Sakudo, N.; Nagai, K.

2006-01-01

Plasma-based ion implantation (PBII) as a tool for polymer modification is studied. Polymeric films have good performances for flexible use, such as food packaging or electronic devices. Compared with inorganic rigid materials, polymers generally have large permeability for gases and moisture, which causes packaged contents and devices to degrade. In order to add a barrier function, surface of polymeric films are modified by PBII. One of the advantageous features of this method over deposition is that the modified surface does not have peeling problem. Besides, micro-cracks due to mechanical stress in the modified layer can be decreased. From the standpoint of mass production, conventional ion implantation that needs low-pressure environment of less than 10 -3 Pa is not suitable for continuous large-area processing, while PBII works at rather higher pressure of several Pa. In terms of issues mentioned above, PBII is one of the most expected techniques for modification on flexible substrates. However, the mechanism how the barrier function appears by ion implantation is not well explained so far. In this study, various kinds of polymeric films, including polyethyleneterephthalate (PET), are modified by PBII and their barrier characteristics that depend on the ion dose are evaluated. In order to investigate correlations of the barrier function with implanted ions, modified surface is analyzed with X-ray photoelectron spectroscopy (XPS). It is assumed that the diffusion and sorption coefficients are changed by ion implantation, resulting in higher barrier function

Ion beam modification of thermal stress resistance of MgO single crystals with different crystallographic faces

International Nuclear Information System (INIS)

Gurarie, V.N.; Otsuka, P.H.; Jamieson, D.N.; Williams, J.S.; Conway, M.

1999-01-01

Ion beam modification of thermal shock stress and damage resistance of MgO single crystals with various crystallographic faces is investigated. The most stable crystal faces in terms of stress and damage resistance are established. Ion implantation is shown to reduce the temperature threshold of fracture for all crystal faces tested. The (111) face is demonstrated to be of highest stability compared to (110) and (100) faces in both implanted and unimplanted crystals. At the same time ion implantation substantially increases the microcrack density for the faces tested and reduces the degree of fracture damage following thermal shock. The microcrack density is found to be highest in the crystals with (110) face in comparison with the (001) and (111) faces. The effect is analysed using fracture mechanics principles and discussed in terms of the implantation-induced lattice damage

Focused-ion-beam induced interfacial intermixing of magnetic bilayers for nanoscale control of magnetic properties

International Nuclear Information System (INIS)

Burn, D M; Atkinson, D; Hase, T P A

2014-01-01

Modification of the magnetic properties in a thin-film ferromagnetic/non-magnetic bilayer system by low-dose focused ion-beam (FIB) induced intermixing is demonstrated. The highly localized capability of FIB may be used to locally control magnetic behaviour at the nanoscale. The magnetic, electronic and structural properties of NiFe/Au bilayers were investigated as a function of the interfacial structure that was actively modified using focused Ga + ion irradiation. Experimental work used MOKE, SQUID, XMCD as well as magnetoresistance measurements to determine the magnetic behavior and grazing incidence x-ray reflectivity to elucidate the interfacial structure. Interfacial intermixing, induced by low-dose irradiation, is shown to lead to complex changes in the magnetic behavior that are associated with monotonic structural evolution of the interface. This behavior may be explained by changes in the local atomic environment within the interface region resulting in a combination of processes including the loss of moment on Ni and Fe, an induced moment on Au and modifications to the spin-orbit coupling between Au and NiFe. (paper)

Computer simulation of structural modifications induced by highly energetic ions in uranium dioxide

Energy Technology Data Exchange (ETDEWEB)

Sasajima, Y., E-mail: sasajima@mx.ibaraki.ac.jp [Department of Materials Science and Engineering, Faculty of Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi 316-8511 (Japan); Frontier Research Center for Applied Atomic Sciences, Ibaraki University, Shirakata 162-4, Tokai 319-1106 (Japan); Osada, T. [Graduate School of Science and Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi 316-8511 (Japan); Ishikawa, N. [Japan Atomic Energy Agency (JAEA), Shirakata Shirane 2-4, Tokai 319-1195 (Japan); Iwase, A. [Department of Materials Science, Osaka Prefecture University, Gakuen-cho 1-1, Sakai 599-8531 (Japan)

2013-11-01

The structural modification caused by the high-energy-ion irradiation of single-crystalline uranium dioxide was simulated by the molecular dynamics method. As the initial condition, high kinetic energy was supplied to the individual atoms within a cylindrical region of nanometer-order radius located in the center of the specimen. The potential proposed by Basak et al. [C.B. Basak, A.K. Sengupta, H.S. Kamath, J. Alloys Compd. 360 (2003) 210–216] was utilized to calculate interaction between atoms. The supplied kinetic energy was first spent to change the crystal structure into an amorphous one within a short period of about 0.3 ps, then it dissipated in the specimen. The amorphous track radius R{sub a} was determined as a function of the effective stopping power gS{sub e}, i.e., the kinetic energy of atoms per unit length created by ion irradiation (S{sub e}: electronic stopping power, g: energy transfer ratio from stopping power to lattice vibration energy). It was found that the relationship between R{sub a} and gS{sub e} follows the relation R{sub a}{sup 2}=aln(gS{sub e})+b. Compared to the case of Si and β-cristobalite single crystals, it was harder to produce amorphous track because of the long range interaction between U atoms.

Modification of the microstructure and electronic properties of rutile TiO_2 thin films with 79 MeV Br ion irradiation

International Nuclear Information System (INIS)

Rath, Haripriya; Dash, P.; Singh, U.P.; Avasthi, D.K.; Kanjilal, D.; Mishra, N.C.

2015-01-01

Modifications induced by 79 MeV Br ions in rutile titanium dioxide thin films, synthesized by dc magnetron sputtering are presented. Irradiations did not induce any new XRD peak corresponding to any other phase. The area and the width of the XRD peaks were considerably affected by irradiation, and peaks shifted to lower angles. But the samples retained their crystallinity at the highest fluence (1 × 10"1"3 ions cm"−"2) of irradiation even though the electronic energy loss of 79 MeV Br ions far exceeds the reported threshold value for amorphization of rutile TiO_2. Fitting of the fluence dependence of the XRD peak area to Poisson equation yielded the radius of ion tracks as 2.4 nm. Ion track radius obtained from the simulation based on the thermal spike model matches closely with that obtained from the fluence dependence of the area under XRD peaks. Williamson–Hall analysis of the XRD spectra indicated broadening and shifting of the peaks are a consequence of irradiation induced defect accumulation leading to microstrains, as was also indicated by Raman and UV–Visible absorption study.

Modifications of poly (vinilydene fluoride) under electronic excitations produced by charged particles (heavy ions and electrons)

International Nuclear Information System (INIS)

Fina, A.

1990-04-01

Some of the physico-chemical properties of organic solids like conductivity or permeation can be improved by irradiation. The aim of this work is to characterize modifications induced in poly (vinylidene fluoride) films (PVDF) by charged particles (ions and electrons), with electronic stopping power, for doses ranging from zero to twenty G-Grays. Influence of dose, density of electronic excitations, and flux (in particles per square centimeter), and the nature of defects induced by the beam, were studied with two methods: X-ray Photoelectron Spectroscopy (or XPS) for surface analysis, and electron Spin Resonance (or ESR) to probe the bulk of the film. Three ranges of doses are revealed in view of experimental results. At lower doses, PVDF undergoes deshydrofluorination induced by desorption; it is a low modifications regime. For intermediate range doses, conjugated carbon backbones of polyene compounds are produced. At higher doses, intermolecular interactions between the resulting fragments give a crosslinked network. For the upper limit of doses used, bond breaking results in a non reversible degradation of PVDF. In this last situation, direct atomic displacement of target atoms, is not negligible [fr

Gamma irradiation-induced modifications of resins found in nuclear waste embedding processes; Modifications induites par irradiation gamma dans les differentes resines rencontrees dans le traitement des dechets nucleaires

Energy Technology Data Exchange (ETDEWEB)

Allali, H [Faculte des Science et Techniques, Settat (Morocco); Debre, O; Lambert, M; Nsouli, B; Thomas, J P [Inst. de Physique Nucleaire, Lyon-1 Univ., 69 - Villeurbanne (France); Collaboration: IPN-Lyon, Laboratoire d` Etude des Materiaux Plastiques et des Biomateriaux, URA 507, UCBL, Agence Nationale pour la Gestion des Dechets Radiactifs

1999-12-31

The various resins involved in nuclear waste disposal are subject to gamma irradiation-induced modifications. From Time-of-Flight Mass Spectrometry of Secondary ions emitted under High Energy Projectiles bombardment (HSF-SIMS) of such materials the following results are obtained: the embedding epoxy resin DGEBA-DDM does not exhibit significant bulk changes in chemical structure, whatever the dose rate and irradiation medium (air or water), at least up to 2 MGy. However, oxidation processes are well observed at the very surface. Under the same conditions Ion exchange resins to be embedded are subjected to scissions of their functional sites, leading to fixed ion release. Dehydration under irradiation is observed pointing out the crucial role of water in ion transport outside of the material. (authors)

Oxygen ion implantation induced microstructural changes and electrical conductivity in Bakelite RPC detector material

Energy Technology Data Exchange (ETDEWEB)

Kumar, K. V. Aneesh, E-mail: aneesh1098@gmail.com; Ravikumar, H. B., E-mail: hbr@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Mysore-570006 (India); Ranganathaiah, C., E-mail: cr@physics.uni-mysore.ac.in [Govt. Research Centre, Sahyadri Educational Institutions, Mangalore-575007 (India); Kumarswamy, G. N., E-mail: kumy79@gmail.com [Department of Studies in Physics, Amrita Vishwa Vidyapeetham, Bangalore-560035 (India)

2016-05-06

In order to explore the structural modification induced electrical conductivity, samples of Bakelite Resistive Plate Chamber (RPC) detector materials were exposed to 100 keV Oxygen ion in the fluences of 10{sup 12}, 10{sup 13}, 10{sup 14} and 10{sup 15} ions/cm{sup 2}. Ion implantation induced microstructural changes have been studied using Positron Annihilation Lifetime Spectroscopy (PALS) and X-Ray Diffraction (XRD) techniques. Positron lifetime parameters viz., o-Ps lifetime and its intensity shows the deposition of high energy interior track and chain scission leads to the formation of radicals, secondary ions and electrons at lower ion implantation fluences (10{sup 12} to10{sup 14} ions/cm{sup 2}) followed by cross-linking at 10{sup 15} ions/cm{sup 2} fluence due to the radical reactions. The reduction in electrical conductivity of Bakelite detector material is correlated to the conducting pathways and cross-links in the polymer matrix. The appropriate implantation energy and fluence of Oxygen ion on polymer based Bakelite RPC detector material may reduce the leakage current, improves the efficiency, time resolution and thereby rectify the aging crisis of the RPC detectors.

Surface modification of ceramics and metals by ion implantation combined with plasma irradiation

International Nuclear Information System (INIS)

Miyagawa, Soji; Miyagawa, Yoshiko; Nakao, Setsuo; Ikeyama, Masami; Saitoh, Kazuo

2000-01-01

To develop a new surface modification technique using ion implantation combined with plasma irradiation, thin film formation by IBAD (Ion Beam Assisted Deposition) and atom relocation processes such as radiation enhanced diffusion and ion beam mixing under high dose implantation have been studied. It was confirmed that the computer simulation code, dynamic-SASAMAL (IBAD version) developed in this research, is quite useful to evaluate ballistic components in film formation by high dose implantation on ceramics and metals, by ion beam mixing of metal-ceramics bi-layer and by the IBAD method including hydrocarbon deposition. Surface modification process of SiC by simultaneous irradiation of ions with a radical beam has also been studied. A composite of SiC and β-Si 3 N 4 was found to be formed on a SiC surface by hot implantation of nitrogen. The amount of β- Si 3 N 4 crystallites increased with increasing the dosage of the hydrogen radical beam during nitrogen implantation. (author)

Materials science education: ion beam modification and analysis of materials

Science.gov (United States)

Zimmerman, Robert; Muntele, Claudiu; Ila, Daryush

2012-08-01

The Center for Irradiation of Materials (CIM) at Alabama A&M University (http://cim.aamu.edu) was established in 1990 to serve the University in its research, education and services to the need of the local community and industry. CIM irradiation capabilities are oriented around two tandem-type ion accelerators with seven beam lines providing high-resolution Rutherford backscattering spectrometry, MeV focus ion beam, high-energy ion implantation and irradiation damage studies, particle-induced X-ray emission, particle-induced gamma emission and ion-induced nuclear reaction analysis in addition to fully automated ion channeling. One of the two tandem ion accelerators is designed to produce high-flux ion beam for MeV ion implantation and ion irradiation damage studies. The facility is well equipped with a variety of surface analysis systems, such as SEM, ESCA, as well as scanning micro-Raman analysis, UV-VIS Spectrometry, luminescence spectroscopy, thermal conductivity, electrical conductivity, IV/CV systems, mechanical test systems, AFM, FTIR, voltammetry analysis as well as low-energy implanters, ion beam-assisted deposition and MBE systems. In this presentation, we will demonstrate how the facility is used in material science education, as well as providing services to university, government and industry researches.

Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

Energy Technology Data Exchange (ETDEWEB)

Datta, D. P.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751 005 (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 201 314 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Das, T. D. [Department of Electronic Science, University of Calcutta, APC Road, Kolkata 700 009 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

2014-07-21

Room temperature implantation of 60 keV Ar{sup +}-ions in GaSb to the fluences of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.

Modification of poly(ether ether ketone) by ion irradiation

Czech Academy of Sciences Publication Activity Database

Hnatowicz, Vladimír; Havránek, Vladimír; Bočan, Jiří; Macková, Anna; Vacík, Jiří; Švorčík, V.

2008-01-01

Roč. 266, č. 2 (2008), s. 283-287 ISSN 0168-583X R&D Projects: GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : PEEK * ion beam modification * polymer degradation Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.999, year: 2008

The third generation multi-purpose plasma immersion ion implanter for surface modification of materials

CERN Document Server

Tang Bao Yin; Wang Xiao Feng; Gan Kong Yin; Wang Song Yan; Chu, P K; Huang Nian Ning; Sun Hong

2002-01-01

The third generation multi-purpose plasma immersion ion implantation (PIII) equipment has been successfully used for research and development of surface modification of biomedical materials, metals and their alloys in the Southwest Jiaotong University. The implanter equipped with intense current, pulsed cathodic arc metal plasma sources which have both strong coating function and gas and metal ion implantation function. Its pulse high voltage power supply can provide big output current. It can acquire very good implantation dose uniformity. The equipment can both perform ion implantation and combine ion implantation with sputtering deposition and coating to form many kinds of synthetic surface modification techniques. The main design principles, features of important components and achievement of research works in recent time have been described

Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S. [Crystal Growth Centre, Anna University, Chennai (India); Balaji, M. [National Centre for Nanoscience and Nanotechnology, University of Madras, Guindy Campus, Chennai (India); Asokan, K. [Inter-University Accelerator Centre, New Delhi (India); Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai (India); Manonmaniam Sundaranar University, Tirunelveli (India)

2017-03-01

Highlights: • Effects on InGaN/GaN QW structures by Au{sup 7+} (100 MeV) ion have been investigated. • Structural defects of the irradiated InGaN/GaN QW structures are determined. • The intermixing effect in irradiated InGaN/GaN QW structures were understood. • Modified luminescence was observed in the PL spectra due to heavy ion irradiation. • Surface modification was observed due to the heavy ion irradiation. - Abstract: The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au{sup 7+} ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 −1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} compared to the pristine QW structures.

Effects of nuclear elastic scattering and modifications of ion-electron equilibration power on advanced-fuel burns

International Nuclear Information System (INIS)

Galambos, J.D.

1983-01-01

The effects of Nuclear Elastic Scattering (NES) of fusion products and modifications of the ion-electron equilibration power on D-T and D-based advanced-fuel fusion plasmas are presented here. The processes causing the modifications to the equilibration power included here are: (1) depletion of low-energy electrons by Coulomb collisions with the ions; and (2) magnetic field effects on the energy transfer between the ions and the electrons. Both NES and the equilibration modifications affect the flow of power to the plasma ions, which is an important factor in the analysis of advanced-fuels. A Hot Ion Mode (HIM) analysis was used to investigate the changes in the minimum ignition requirements for Cat-D and D- 3 He plasmas, due to the changes in the allowable T/sub i/T/sub e/ for ignition from NES and equilibration modifications. Both of these effects have the strongest influence on the ignition requirements for high temperature (>50 keV), low beta (<15%) plasmas, where the cyclotron radiation power loss from the electrons (which is particularly sensitive to changes in the electron temperature) is large

On the nano-hillock formation induced by slow highly charged ions on insulator surfaces

Science.gov (United States)

Lemell, C.; El-Said, A. S.; Meissl, W.; Gebeshuber, I. C.; Trautmann, C.; Toulemonde, M.; Burgdörfer, J.; Aumayr, F.

2007-10-01

We discuss the creation of nano-sized protrusions on insulating surfaces using slow highly charged ions. This method holds the promise of forming regular structures on surfaces without inducing defects in deeper lying crystal layers. We find that only projectiles with a potential energy above a critical value are able to create hillocks. Below this threshold no surface modification is observed. This is similar to the track and hillock formation induced by swift (˜GeV) heavy ions. We present a model for the conversion of potential energy stored in the projectiles into target-lattice excitations (heat) and discuss the possibility to create ordered structures using the guiding effect observed in insulating conical structures.

Surface modification of yttria stabilized zirconia by ion implantation

International Nuclear Information System (INIS)

Scholten, D.

1987-01-01

The results of investigations of surface modification by ion implantation in zirconia are described. As dopant material, iron was investigated thoroughly. The depth distribution of implanted ions depends on implantation parameters and the dopant-matrix system. The investigations of thermal stability of some implanted iron profiles by RBS and AES are described. Special interest lies in the thermal stability under working conditions of the zirconia material (400-1000 0 C). Radiation damage introduced in the implanted layer was investigated using transmission electron microscopy on polycrystalline material and channeling experiments on a single crystal implanted with iron. 179 refs.; 87 figs.; 20 tabs

Ion-induced damage and amorphization in Si

International Nuclear Information System (INIS)

Holland, O.W.; White, C.W.

1990-01-01

Ion-induced damage growth in high-energy, self-ion irradiated Si was studied using electron microscopy and Rutherford backscattering spectroscopy. The results show that there is a marked variation in the rate of damage growth, as well as the damage morphology, along the path of the ion. Near the ion end-of-range (eor), damage increases monotonically with ion fluence until a buried amorphous layer is formed, while damage growth saturates at a low level in the region ahead. The morphology of the damage in the saturated region is shown to consist predominantly of simple defect clusters such as the divacancy. Damage growth remains saturated ahead of the eor until expansion of the buried amorphous layer encroaches into the region. A homogeneous growth model is presented which accounts for damage saturation, and accurately predicts the dose-rate dependence of the saturation level. Modifications of the model are discussed which are needed to account for the rapid growth in the eor region and near the interface of the buried amorphous layer. Two important factors contributing to rapid damage growth are identified. Spatial separation of the Frenkel defect pairs (i.e. interstitials and vacancies) due to the momentum of the interstitials is shown to greatly impact damage growth near the eor, while uniaxial strain in the interfacial region of the amorphous layer is identified as an important factor contributing to growth at that location. 20 refs., 10 figs

Characterization of ion beam induced nanostructures

International Nuclear Information System (INIS)

Ghatak, J.; Satpati, B.; Umananda, M.; Kabiraj, D.; Som, T.; Dev, B.N.; Akimoto, K.; Ito, K.; Emoto, T.; Satyam, P.V.

2006-01-01

Tailoring of nanostructures with energetic ion beams has become an active area of research leading to the fundamental understanding of ion-solid interactions at nanoscale regime and with possible applications in the near future. Rutherford backscattering spectrometry (RBS), high resolution transmission electron microscopy (HRTEM) and asymmetric X-ray Bragg-rocking curve experimental methods have been used to characterize ion-induced effects in nanostructures. The possibility of surface and sub-surface/interface alloying at nano-scale regime, ion-beam induced embedding, crater formation, sputtering yield variations for systems with isolated nanoislands, semi-continuous and continuous films of noble metals (Au, Ag) deposited on single crystalline silicon will be reviewed. MeV-ion induced changes in specified Au-nanoislands on silicon substrate are tracked as a function of ion fluence using ex situ TEM. Strain induced in the bulk silicon substrate surface due to 1.5 MeV Au 2+ and C 2+ ion beam irradiation is determined by using HRTEM and asymmetric Bragg X-ray rocking curve methods. Preliminary results on 1.5 MeV Au 2+ ion-induced effects in nanoislands of Co deposited on silicon substrate will be discussed

Role of the irradiation temperature on the modifications of swift-heavy-ion irradiated polyethylene

International Nuclear Information System (INIS)

Melot, M.; Ngono-Ravache, Y.; Balanzat, E.

2003-01-01

The damage processes triggered by swift heavy ions, SHI, can be very different to those induced by classical low ionising particles. This is due to the very high electronic stopping power, (dE/dx) e , of SHI. This paper concerns the effects of SHI on polyethylene, PE. In PE, low (dE/dx) e irradiations induce crosslinking and in-chain double bond formation. At high (dE/dx) e , the creation yield of vinyl groups becomes significant. Above a (dE/dx) e threshold, alkyne and allene groups appear. We present results on low temperature irradiations that bring new enlightenment on the damage process by preventing the migration of radiation-induced radicals and molecules. Two SHI specific modifications are studied: vinyl groups and alkyne end groups. We have irradiated PE films with oxygen and sulphur beams at 13.6 and 11.2 MeV/amu, respectively. The modifications were followed by in situ infrared spectroscopy (FTIR). We have performed irradiations at 8 and 290 K. The samples irradiated at 8 K have been annealed up to 290 K for investigating the effect of radical migration. Lowering the irradiation temperature to 8 K increases the creation yield of vinyl groups and alkyne end groups. The enhancement factor between 290 and 8 K is around three. Consequently the formation of defects specific to SHI irradiations is sensitive to radical migration and hence requires some time. During annealing, the alkyne concentration remains stable indicating that the creation of this group cannot be induced by radical recombination. The annealing spectra of vinyl groups are more complex

Measurements of RF-induced sol modifications in Tore Supra tokamak

International Nuclear Information System (INIS)

Kubic, Martin; Gunn, James P.; Colas, Laurent; Heuraux, Stephane; Faudot, Eric

2012-01-01

Since spring 2011, one of the three ion cyclotron resonance heating (ICRH) antennas in the Tore Supra (TS) tokamak is equipped with a new type of Faraday screen (FS). Results from Radio Frequency (RF) simulations of the new Faraday screen suggest the innovative structure with cantilevered bars and 'shark tooth' openings significantly changes the current flow pattern on the front of the antenna which in turn reduces the RF potential and RF electrical field in particular parallel to the magnetic field lines which contributes to generating RF sheaths. Effects of the new FS operation on RF-induced scrape-off layer (SOL) modifications are studied for different plasma and antenna configurations - scans of strap power ratio imbalance, phasing, injected power and SOL density. (authors)

Surface modification of positive electrode materials for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Julien, C.M., E-mail: Christian.Julien@upmc.fr [Sorbonne Universités, UPMC Univ. Paris 6, Physicochimie des Electrolytes et Nanosystèmes Interfaciaux (PHENIX), UMR 8234, 75005 Paris (France); Mauger, A. [Institut de Minéralogie de Physique des Matériaux et de Cosmochimie (IMPMC), UPMC Univ. Paris 6, 4 place Jussieu, 75005 Paris (France); Groult, H. [Sorbonne Universités, UPMC Univ. Paris 6, Physicochimie des Electrolytes et Nanosystèmes Interfaciaux (PHENIX), UMR 8234, 75005 Paris (France); Zaghib, K. [Energy Storage and Conversion, Research Institute of Hydro-Québec, Varennes, Québec J3X 1S1 (Canada)

2014-12-01

The advanced lithium-ion batteries are critically important for a wide range of applications, from portable electronics to electric vehicles. The research on their electrodes aims to increase the energy density and the power density, improve the calendar and the cycling life, without sacrificing the safety issues. A constant progress through the years has been obtained owing to the surface treatment of the particles, in particular the coating of the nanoparticles with a layer that protects the core region from side reactions with the electrolyte, prevents the loss of oxygen, and the dissolution of the metal ions in the electrolyte, or simply improve the conductivity of the powder. The purpose of the present work is to present the different surface modifications that have been tried for three families of positive electrodes: layered, spinel and olivine frameworks that are currently considered as promising materials. The role of the different coats used to improve either the surface conductivity, or the thermal stability, or the structural integrity is discussed. - Highlights: • Report the various surface modifications tried for the positive electrodes of Li-ion batteries. • The role of different coats used to improve the conductivity, or the thermal stability, or the structural integrity. • Improvement of electrochemical properties of electrodes after coating or surface treatment.

Probing ion-specific effects on aqueous acetate solutions: Ion pairing versus water structure modifications.

Science.gov (United States)

Petit, Tristan; Lange, Kathrin M; Conrad, Gerrit; Yamamoto, Kenji; Schwanke, Christoph; Hodeck, Kai F; Dantz, Marcus; Brandenburg, Tim; Suljoti, Edlira; Aziz, Emad F

2014-05-01

The effect of monovalent cations (Li(+), K(+), NH4 (+), Na(+)) on the water structure in aqueous chloride and acetate solutions was characterized by oxygen K-edge X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy, and resonant inelastic X-ray scattering (RIXS) of a liquid microjet. We show ion- and counterion dependent effects on the emission spectra of the oxygen K-edge, which we attribute to modifications of the hydrogen bond network of water. For acetates, ion pairing with carboxylates was also probed selectively by XAS and RIXS. We correlate our experimental results to speciation data and to the salting-out properties of the cations.

Probing ion-specific effects on aqueous acetate solutions: Ion pairing versus water structure modifications

Directory of Open Access Journals (Sweden)

Tristan Petit

2014-05-01

Full Text Available The effect of monovalent cations (Li+, K+, NH4+, Na+ on the water structure in aqueous chloride and acetate solutions was characterized by oxygen K-edge X-ray absorption spectroscopy (XAS, X-ray emission spectroscopy, and resonant inelastic X-ray scattering (RIXS of a liquid microjet. We show ion- and counterion dependent effects on the emission spectra of the oxygen K-edge, which we attribute to modifications of the hydrogen bond network of water. For acetates, ion pairing with carboxylates was also probed selectively by XAS and RIXS. We correlate our experimental results to speciation data and to the salting-out properties of the cations.

Surface modification of titanium and titanium alloys by ion implantation.

Science.gov (United States)

Rautray, Tapash R; Narayanan, R; Kwon, Tae-Yub; Kim, Kyo-Han

2010-05-01

Titanium and titanium alloys are widely used in biomedical devices and components, especially as hard tissue replacements as well as in cardiac and cardiovascular applications, because of their desirable properties, such as relatively low modulus, good fatigue strength, formability, machinability, corrosion resistance, and biocompatibility. However, titanium and its alloys cannot meet all of the clinical requirements. Therefore, to improve the biological, chemical, and mechanical properties, surface modification is often performed. In view of this, the current review casts new light on surface modification of titanium and titanium alloys by ion beam implantation. (c) 2010 Wiley Periodicals, Inc.

Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

International Nuclear Information System (INIS)

Nikolaev, A.G.; Yushkov, G.Yu.; Oks, E.M.; Oztarhan, A.; Akpek, A.; Hames-Kocabas, E.; Urkac, E.S.; Brown, I.G.

2014-01-01

Highlights: • Ion implantation. • Anti-bacterial properties. • Textile polymer. • Vacuum arc ion source. - Abstract: Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal–gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the “inverse” concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material

Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

Energy Technology Data Exchange (ETDEWEB)

Nikolaev, A.G., E-mail: nik@opee.hcei.tsc.ru [High Current Electronics Institute, Siberian Branch of the Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Yushkov, G.Yu.; Oks, E.M. [High Current Electronics Institute, Siberian Branch of the Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Oztarhan, A. [Izmir University, Izmir 35140 (Turkey); Akpek, A.; Hames-Kocabas, E.; Urkac, E.S. [Bioengineering Department, Ege University, Bornova 35100, Izmir (Turkey); Brown, I.G. [Lawrence Berkeley National Laboratory, Berkeley, CA 94708 (United States)

2014-08-15

Highlights: • Ion implantation. • Anti-bacterial properties. • Textile polymer. • Vacuum arc ion source. - Abstract: Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal–gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the “inverse” concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material.

Chemical modification of polypropylene induced by high energy carbon ions

Energy Technology Data Exchange (ETDEWEB)

Saha, A.; Chakraborty, V.; Chintalapudi, S.N. E-mail: snc@gamma.iuc.res.in

2000-06-01

Polypropylene was irradiated with {sup 12}C{sup +} ions of 3.6 and 5.4 MeV energy using 3 MV Pelletron. The spectral changes owing to ion bombardment were investigated by UV-VIS and Fourier-transform infrared (FTIR) spectroscopy. A gradual increase in absorbance was observed around visible and near visible region with increase in fluence of bombarding ions. The difference absorption spectra show formation of chromophoric groups with wavelength maximum near 380 nm at lower fluence, but at high fluence a shift in peak is observed. The chromophoric groups are likely to be the extended conjugated polyene system and the red shift in peak position at high fluence may be attributed to the greater degree of conjugation. The formation of unsaturated linkage is confirmed by the FTIR spectra with observed stretching band around 1650 cm{sup -1} and its intensity was found to increase with increase in ion fluence studied. The gases (in the range 2-80 amu) which were evolved due to interaction of polypropylene with {sup 12}C{sup +} ions were measured with Residual Gas Analyzer (RGA). A large number of gaseous components were detected. This shows that polymer chains break into some smaller fragments which concomitantly leads to extended conjugation.

Electronic excitation induced modifications of optical and morphological properties of PCBM thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, T. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, R., E-mail: rsinghal.phy@mnit.ac.in [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Vishnoi, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Department of Physics, Vardhman (P.G.) College, Bijnor 246701, U.P. (India); Sharma, P. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Patra, A.; Chand, S. [National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

2016-07-15

Highlights: • Spin casted PCBM thin films are irradiated by 90 MeV Ni{sup 7+} ion beam. • The decrease in band gap was found after irradiation. • There is a decomposition of molecular bond due to ion irradiation. • Roughness is also found to be dependent on incident ion fluence. - Abstract: Phenyl C{sub 61} butyric acid methyl ester (PCBM) is a fullerene derivative and most commonly used in organic photovoltaic devices both as electron acceptor and transporting material due to high electron mobility. PCBM is easy to spin caste on some substrate as it is soluble in chlorobenzene. In this study, the spin coated thin films of PCBM (on two different substrate, glass and double sided silicon) were irradiated using 90 MeV Ni{sup 7+} swift heavy ion beam at low fluences ranging from 1 × 10{sup 9} to 1 × 10{sup 11} ions/cm{sup 2} to study the effect of ion beam irradiation. The pristine and irradiated PCBM thin films were characterized by UV–visible absorption spectroscopy and fourier transform infrared spectroscopy (FTIR) to investigate the optical properties before and after irradiation. These thin films were further analyzed using atomic force microscopy (AFM) to investigate the morphological modifications which are induced by energetic ions. The variation in optical band gap after irradiation was measured using Tauc’s relation from UV–visible absorption spectra. A considerable change was observed with increasing fluence in optical band gap of irradiated thin films of PCBM with respect to the pristine film. The decrease in FTIR band intensity of C{sub 60} cage reveals the polymerization reaction due to high energy ion impact. The roughness is also found to be dependent on incident fluences. This study throws light for the application of PCBM in organic solar cells in form of ion irradiation induced nanowires of PCBM for efficient charge carrier transportation in active layer.

Desalination by electrodialysis with the ion-exchange membrane prepared by radiation-induced graft polymerization

Energy Technology Data Exchange (ETDEWEB)

Choi, Seong-Ho; Han Jeong, Young; Jeong Ryoo, Jae; Lee, Kwang-Pill E-mail: kplee@kyungpook.ac.kr

2001-07-01

Ion-exchange membranes modified with the triethylamine [-N(CH{sub 2}CH{sub 3}){sub 3}] and phosphoric acid (-PO{sub 3} H) groups were prepared by radiation-induced grafting of glycidyl methacrylate (GMA) onto the polyolefin nonwavon fabric (PNF) and subsequent chemical modification of poly(GMA) graft chains. The physical and chemical properties of the GMA-grafted PNF and the PNF modified with ion-exchange groups were investigated by SEM, XPS, TGA, and DSC. Furthermore, electrochemical properties such as specific electric resistance, transport number of K{sup +}, and desalination were examined. The grafting yield increased with increasing reaction time and reaction temperature. The maximum grafting yield was obtained with 40% (vol.%) monomer concentration in dioxane at 60 deg. C. The content of the cation- and anion-exchange group increased with increasing grafting yield. Electrical resistance of the PNF modified with TEA and -PO{sub 3} H group decreased, while the water uptake (%) increased with increasing ion-exchange group capacities. Transport number of the PNF modified with ion-exchange group were the range of ca. 0.82-0.92. The graft-type ion-exchange membranes prepared by radiation-induced graft copolymerization were successfully applied as separators for electrodialysis. (author)

Surface amorphization in Al2O3 induced by swift heavy ion irradiation

International Nuclear Information System (INIS)

Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

2013-01-01

Microstructure in single crystalline Al 2 O 3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 10 13 to 1.0 × 10 15 ions/cm 2 . After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al 2 O 3 , high-density S e causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 10 13 ions/cm 2 for single crystalline Al 2 O 3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al 2 O 3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al 2 O 3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 10 14 ions/cm 2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures

Surface amorphization in Al2O3 induced by swift heavy ion irradiation

Science.gov (United States)

Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

2013-11-01

Microstructure in single crystalline Al2O3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 1013 to 1.0 × 1015 ions/cm2. After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al2O3, high-density Se causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 1013 ions/cm2 for single crystalline Al2O3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al2O3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al2O3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 1014 ions/cm2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures.

Surface Modifications of Polymers Induced by Heavy Ions Grafting

Energy Technology Data Exchange (ETDEWEB)

Mazzei, R O; Lombardo, J; Camporotondi, D; Tadey, D; Bermudez, G G [National Atomic Energy Commission, Ezeiza Atomic Centre, Ezeiza (Argentina)

2012-09-15

Polymer surfaces are modified by the application of swift heavy ions etching and grafting procedures. The residual active sites produced by heavy ion beams, remaining after the etching process, were used to start the grafting process. In order to produce tracks on foils of poly(vinylidene fluoride) (PVDF) they were irradiated with {sup 208}Pb of 25.62 MeV/n or with 115 MeV Cl ions. Moreover, foils of polypropylene (PP) were irradiated with {sup 208}Pb of 25.62 MeV/n. Then, they were etched and grafted with N-isopropylacrylamide (NIPAAm) monomers or with acrylic acid (AAc) monomers, respectively. The replica method allowed the observation of the shape of the grafted tracks using transmission electron microscopy (TEM). In addition NIPAAm grafted foils were analyzed using Fourier transform infrared spectroscopy (FTIR). The sulfonation procedure (methodology previously described for perfluorated polymers) was applied on grafted PVDF. A new method is described to produce a thin layer of poly-acrylic-acid (membranes) that grows on the surface of PVDF foils implanted by an Ar{sup +} beam with energies between 30-150 keV. Different combinations of monomers in water solutions were used such as: acrylic acid (AAc); acrylic acid-glycidyl methacrylate (AAc-GMA); acrylic acid-styrene (AAc-S); acrylic acid-N-isopropyl acrylamide (AAc-NIPAAm) and acrylic acid-N-isopropyl acrylamide - glycidyl methacrylate (AAc-NIPAAm-GMA). The experimental results show that for particular values of: ion fluence and energy, AAc concentration, sulphuric acid and PVDF polymorphous (alpha or beta) a huge percentage of grafting was obtained. At certain point of the grafting process the development of the PolyAAc-Xmonomer produce a detachment from the irradiated substrate and continue its grafting outside it. This method produces a membrane that is an increased replica of the original implanted surface. Finally, PVDF films implanted by an Ar{sup +} beam with energies about 100 keV and a fluence of 10

Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

Science.gov (United States)

Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

2018-05-01

The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

Desalination by electrodialysis with ion-exchange membrane prepared by radiation-induced graft polymerization

Energy Technology Data Exchange (ETDEWEB)

Choi, Seong-Ho; Jeong, Young Han; Ryoo, Jae Jeong; Lee, Kwang-Pill [Department of Chemistry Graduate School, Kyungpook National University, Taegu (Korea)

2000-07-01

Ion-exchange membranes modified with triethylamine [-N(CH{sub 2}CH{sub 3}){sub 3}] and phosphoric acid (-PO{sub 3}H) groups were prepared by radiation-induced grafting of glycidyl methacrylate (GMA) onto polyolefin nonwavon fabric (PNF) and subsequent chemical modification of poly (GMA) graft chains. The physical and chemical properties of the GMA-grafted PNF and the PNF modified with ion-exchange groups were investigated by SEM and XPS. The ion-exchange capacities of the cation- and anion-exchange membrane were 0.20 and 1.24mmol/g, respectively. The content of cation- and anion exchange group increased with increasing grafting yield (d.g.=100%). Electrical resistance of PNF modified with TEA and -PO{sub 3}H group decreased with increasing ion-exchange group capacities. Application of the graft-type ion-exchange membranes as separators for electrodialysis enabled use to reduce the time required to achieve 85.5% desalination of the 0.5M NaCl solution. (author)

Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

Energy Technology Data Exchange (ETDEWEB)

Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

2016-01-15

The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

Surface modification of materials by ion implantations for industrial and medical applications. Final report of a co-ordinated research project

International Nuclear Information System (INIS)

2000-07-01

The objectives of the Co-ordinated Research Project on Modification of Materials by Ion Treatment for Industrial Applications were to develop economically acceptable surface modification techniques leading to thick treated layers, to predict ion beam mixing and impurity atom migration during and after implantation, and to evaluate the tribological post-implantation properties and performance of treated components. This TECDOC summarises the current status and prospects in surface modification by ion implantation methodology and technology, providing new information in basic and applied research

Surface modification of materials by ion implantations for industrial and medical applications. Final report of a co-ordinated research project

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-07-01

The objectives of the Co-ordinated Research Project on Modification of Materials by Ion Treatment for Industrial Applications were to develop economically acceptable surface modification techniques leading to thick treated layers, to predict ion beam mixing and impurity atom migration during and after implantation, and to evaluate the tribological post-implantation properties and performance of treated components. This TECDOC summarises the current status and prospects in surface modification by ion implantation methodology and technology, providing new information in basic and applied research.

Modification to the accelerator of the NBI-1B ion source for improving the injection efficiency

International Nuclear Information System (INIS)

Kim, T. S.; Jeong, S. H.; Chang, D. H.; In, S. R.; Park, M.; Jung, B. K.; Lee, K. W.; Wang, S. J.; Bae, Y. S.; Park, H. T.; Kim, J. S.; Cho, W.; Choi, D. J.

2016-01-01

Minimizing power loss of a neutral beam imposes modification of the accelerator of the ion source for further improvement of the beam optics. The beam optics can be improved by focusing beamlets. The injection efficiencies by the steering of ion beamlets are investigated numerically to find the optimum modification of the accelerator design of the NBI-1B ion source. The beam power loss was reduced by aperture displacement of three edge beamlets arrays considering power loadings on the beamline components. Successful testing and operation of the ion source at 60 keV/84% of injection efficiency led to the possibility of enhancing the system capability to a 2.4 MW power level at 100 keV/1.9 μP

Study on surface modification of M2 steel induced by Cu ions and Al ions implantation

International Nuclear Information System (INIS)

Wang Chao; Liu Zhengmin

2001-01-01

Changes of surface hardness and wear resistances in M2 type steel implanted by Cu Al ions were reported. The dependence of surface strengthening on ion species and dose was studied by X-ray diffraction (XRD) and Rutherford Backscattering Spectroscopy (RBS) for microhardness and wear resistances measurement. It is shown that both hardness and wear resistance increases apparently after ion implantation. XRD analysis indicates that different phases formed after Al Cu ions implanted. It is also suggested that Cu, Al ions have different role in surface strengthening

Two-chamber configuration of Bio-Nano electron cyclotron resonance ion source for fullerene modification

Energy Technology Data Exchange (ETDEWEB)

Uchida, T., E-mail: uchida-t@toyo.jp [Bio-Nano Electronics Research Centre, Toyo University, Kawagoe 350-8585 (Japan); Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe 350-8585 (Japan); Rácz, R.; Biri, S. [Institute for Nuclear Research (Atomki), Hungarian Academy of Sciences, Bem tér 18/C, H-4026 Debrecen (Hungary); Muramatsu, M.; Kitagawa, A. [National Institute of Radiological Sciences (NIRS), Chiba 263-8555 (Japan); Kato, Y. [Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Yoshida, Y. [Bio-Nano Electronics Research Centre, Toyo University, Kawagoe 350-8585 (Japan); Faculty of Science and Engineering, Toyo University, Kawagoe 350-8585 (Japan)

2016-02-15

We report on the modification of fullerenes with iron and chlorine using two individually controllable plasmas in the Bio-Nano electron cyclotron resonance ion source (ECRIS). One of the plasmas is composed of fullerene and the other one is composed of iron and chlorine. The online ion beam analysis allows one to investigate the rate of the vapor-phase collisional modification process in the ECRIS, while the offline analyses (e.g., liquid chromatography-mass spectrometry) of the materials deposited on the plasma chamber can give information on the surface-type process. Both analytical methods show the presence of modified fullerenes such as fullerene-chlorine, fullerene-iron, and fullerene-chlorine-iron.

MHD-induced Energetic Ion Loss during H-mode Discharges in the National Spherical Torus Experiment (NSTX)

International Nuclear Information System (INIS)

Medley, S.S.; Gorelenkov, N.N.; Andre, R.; Bell, R.E.; Darrow, D.S.; Fredrickson, E.D.; Kaye, S.M.; LeBlanc, B.P.; Roquemore, A.L.

2004-01-01

MHD-induced energetic ion loss in neutral-beam-heated H-mode [high-confinement mode] discharges in NSTX [National Spherical Torus Experiment] is discussed. A rich variety of energetic ion behavior resulting from magnetohydrodynamic (MHD) activity is observed in the NSTX using a horizontally scanning Neutral Particle Analyzer (NPA) whose sightline views across the three co-injected neutral beams. For example, onset of an n = 2 mode leads to relatively slow decay of the energetic ion population (E ∼ 10-100 keV) and consequently the neutron yield. The effect of reconnection events, sawteeth, and bounce fishbones differs from that observed for low-n, low-frequency, tearing-type MHD modes. In this case, prompt loss of the energetic ion population occurs on a time scale of less than or equal to 1 ms and a precipitous drop in the neutron yield occurs. This paper focuses on MHD-induced ion loss during H-mode operation in NSTX. After H-mode onset, the NPA charge-exchange spectrum usually exhibits a significant loss of energetic ions only for E > E(sub)b/2 where E(sub)b is the beam injection energy. The magnitude of the energetic ion loss was observed to decrease with increasing tangency radius, R(sub)tan, of the NPA sightline, increasing toroidal field, B(sub)T, and increasing neutral-beam injection energy, E(sub)b. TRANSP modeling suggests that MHD-induced ion loss is enhanced during H-mode operation due to an evolution of the q and beam deposition profiles that feeds both passing and trapped ions into the region of low-n MHD activity. ORBIT code analysis of particle interaction with a model magnetic perturbation supported the energy selectivity of the MHD-induced loss observed in the NPA measurements. Transport analysis with the TRANSP code using a fast-ion diffusion tool to emulate the observed MHD-induced energetic ion loss showed significant modifications of the neutral- beam heating as well as the power balance, thermal diffusivities, energy confinement times, and

MHD-induced Energetic Ion Loss during H-mode Discharges in the National Spherical Torus Experiment (NSTX)

Energy Technology Data Exchange (ETDEWEB)

S.S. Medley; N.N. Gorelenkov; R. Andre; R.E. Bell; D.S. Darrow; E.D. Fredrickson; S.M. Kaye; B.P. LeBlanc; A.L. Roquemore; and the NSTX Team

2004-03-15

MHD-induced energetic ion loss in neutral-beam-heated H-mode [high-confinement mode] discharges in NSTX [National Spherical Torus Experiment] is discussed. A rich variety of energetic ion behavior resulting from magnetohydrodynamic (MHD) activity is observed in the NSTX using a horizontally scanning Neutral Particle Analyzer (NPA) whose sightline views across the three co-injected neutral beams. For example, onset of an n = 2 mode leads to relatively slow decay of the energetic ion population (E {approx} 10-100 keV) and consequently the neutron yield. The effect of reconnection events, sawteeth, and bounce fishbones differs from that observed for low-n, low-frequency, tearing-type MHD modes. In this case, prompt loss of the energetic ion population occurs on a time scale of less than or equal to 1 ms and a precipitous drop in the neutron yield occurs. This paper focuses on MHD-induced ion loss during H-mode operation in NSTX. After H-mode onset, the NPA charge-exchange spectrum usually exhibits a significant loss of energetic ions only for E > E(sub)b/2 where E(sub)b is the beam injection energy. The magnitude of the energetic ion loss was observed to decrease with increasing tangency radius, R(sub)tan, of the NPA sightline, increasing toroidal field, B(sub)T, and increasing neutral-beam injection energy, E(sub)b. TRANSP modeling suggests that MHD-induced ion loss is enhanced during H-mode operation due to an evolution of the q and beam deposition profiles that feeds both passing and trapped ions into the region of low-n MHD activity. ORBIT code analysis of particle interaction with a model magnetic perturbation supported the energy selectivity of the MHD-induced loss observed in the NPA measurements. Transport analysis with the TRANSP code using a fast-ion diffusion tool to emulate the observed MHD-induced energetic ion loss showed significant modifications of the neutral- beam heating as well as the power balance, thermal diffusivities, energy confinement times

Structural modification of tantalum crystal induced by nitrogen ion ...

Indian Academy of Sciences (India)

Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran ... check the roughness variations prior to and also after the implantation phase. ... tional changes of modified surfaces as a function of ion dose.

The influence of the PDMS technique in the study of the induced modifications of polymers used in nuclear environment

International Nuclear Information System (INIS)

Nsouli, B.

1995-01-01

The PDMS technique (Particle Induced Desorption Mass Spectrometry) combined with a TOF detection (Time of Flight) is the main tool used in this study of polymer degradation in nuclear environment. Ar 3+ ions with a 9 MeV energy have been used to induce the secondary ion emission, and the study was devoted to two stresses typical of this type of environment. The first part of the work concerned with the structural modifications induced by gamma irradiation on ion exchange resin, used for nuclear effluents reprocessing, namely the poly(4-vinylpyridine), or P-4PV. For such a material, the negative fragment emission is particularly sensitive to structural modifications. Difficult physical measurements in such an insoluble and infusible material (IR, UV - Vis, EPR, TGA, dielectric measurements) became consistent after the degradation mechanisms were elucidated. These effects, interpreted in terms of scissions and recombinations, enabled us to explicit different modes of energy deposition, and shed light on some discrepancies between SIMS and PDMS. The second part of the study is devoted to the thermal ageing of an elastomer, used in fabrication of valve gaskets submitted to high temperatures. First of all, we studied the constituents of the polymeric material, i. e. copolymer, homo polymers, and also additives. This last component proved useful to analyze, as a superficial lubricant layer can mask the conformational rearrangements which seem to occur after few hours of thermal treatment (PE blocks are prevailing at the surface). Here too, the PDMS information is important to account for static SIMS and ESCA results, as its probed layer thickness lies in-between. (author)

Swift heavy ion irradiation induced modification of structure and ...

Indian Academy of Sciences (India)

1Department of Physics, Salipur College, Salipur 754 103, India. 2Department of ... Ion irradiation; nanoparticles; atomic force microscopy; BiFeO3. 1. Introduction .... and to understand their possible origin, a study on power spectral density ...

Unimolecular and collisionally induced ion reactions

International Nuclear Information System (INIS)

Beynon, J.H.; Boyd, R.K.

1978-01-01

The subject is reviewed under the following headings: introduction (mass spectroscopy and the study of fragmentation reactions of gaseous positive ions); techniques and methods (ion sources, detection systems, analysis of ions, data reduction); collision-induced reactions of ions and unimolecular fragmentations of metastable ions; applications (ion structure, energetic measurements, analytical applications, other applications). 305 references. (U.K.)

Materials Modification Under Ion Irradiation: JANNUS Project

International Nuclear Information System (INIS)

Serruys, Y.; Trocellier, P.; Ruault, M.-O.; Henry, S.; Kaietasov, O.; Trouslard, Ph.

2004-01-01

JANNUS (Joint Accelerators for Nano-Science and Nuclear Simulation) is a project designed to study the modification of materials using multiple ion beams and in-situ TEM observation. It will be a unique facility in Europe for the study of irradiation effects, the simulation of material damage due to irradiation and in particular of combined effects. The project is also intended to bring together experimental and modelling teams for a mutual fertilisation of their activities. It will also contribute to the teaching of particle-matter interactions and their applications. JANNUS will be composed of three accelerators with a common experimental chamber and of two accelerators coupled to a 200 kV TEM

Salt stress induced ion accumulation, ion homeostasis, membrane ...

African Journals Online (AJOL)

Salt stress induced ion accumulation, ion homeostasis, membrane injury and sugar contents in salt-sensitive rice ( Oryza sativa L. spp. indica ) roots under isoosmotic conditions. ... The accumulation of sugars in PT1 roots may be a primary salt-defense mechanism and may function as an osmotic control. Key words: ...

Degradation of the solid electrolyte interphase induced by the deposition of manganese ions

Science.gov (United States)

Shin, Hosop; Park, Jonghyun; Sastry, Ann Marie; Lu, Wei

2015-06-01

The deposition of manganese ions dissolved from the cathode onto the interface between the solid electrolyte interphase (SEI) and graphite causes severe capacity fading in manganese oxide-based cells. The evolution of the SEI layer containing these Mn compounds and the corresponding instability of the layer are thoroughly investigated by artificially introducing soluble Mn ions into a 1 mol L-1 LiPF6 electrolyte solution. Deposition of dissolved Mn ions induces an oxygen-rich SEI layer that results from increased electrolyte decomposition, accelerating SEI growth. The spatial distribution of Mn shows that dissolved Mn ions diffuse through the porous layer and are deposited mostly at the inorganic layer/graphite interface. The Mn compound deposited on the anode, identified as MnF2, originates from a metathesis reaction between LiF and dissolved Mn ion. It is confirmed that ion-exchange reaction occurs in the inorganic layer, converting SEI species to Mn compounds. Some of the Mn is observed inside the graphite; this may cause surface structural disordering in the graphite, limiting lithium-ion intercalation. The continuous reaction that occurs at the inorganic layer/graphite interfacial regions and the modification of the original SEI layer in the presence of Mn ions are critically related to capacity fade and impedance rise currently plaguing Li-ion cells.

Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Z., E-mail: pscientific5@aec.org.sy [Scientific Service Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Ahmad, M. [IBA Laboratory, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Chemistry Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic)

2017-04-01

Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

Evidence of ion intercalation mediated band structure modification and opto-ionic coupling in lithium niobite

Science.gov (United States)

Shank, Joshua C.; Tellekamp, M. Brooks; Doolittle, W. Alan

2015-01-01

The theoretically suggested band structure of the novel p-type semiconductor lithium niobite (LiNbO2), the direct coupling of photons to ion motion, and optically induced band structure modifications are investigated by temperature dependent photoluminescence. LiNbO2 has previously been used as a memristor material but is shown here to be useful as a sensor owing to the electrical, optical, and chemical ease of lithium removal and insertion. Despite the high concentration of vacancies present in lithium niobite due to the intentional removal of lithium atoms, strong photoluminescence spectra are observed even at room temperature that experimentally confirm the suggested band structure implying transitions from a flat conduction band to a degenerate valence band. Removal of small amounts of lithium significantly modifies the photoluminescence spectra including additional larger than stoichiometric-band gap features. Sufficient removal of lithium results in the elimination of the photoluminescence response supporting the predicted transition from a direct to indirect band gap semiconductor. In addition, non-thermal coupling between the incident laser and lithium ions is observed and results in modulation of the electrical impedance.

Evidence of ion intercalation mediated band structure modification and opto-ionic coupling in lithium niobite

International Nuclear Information System (INIS)

Shank, Joshua C.; Tellekamp, M. Brooks; Doolittle, W. Alan

2015-01-01

The theoretically suggested band structure of the novel p-type semiconductor lithium niobite (LiNbO 2 ), the direct coupling of photons to ion motion, and optically induced band structure modifications are investigated by temperature dependent photoluminescence. LiNbO 2 has previously been used as a memristor material but is shown here to be useful as a sensor owing to the electrical, optical, and chemical ease of lithium removal and insertion. Despite the high concentration of vacancies present in lithium niobite due to the intentional removal of lithium atoms, strong photoluminescence spectra are observed even at room temperature that experimentally confirm the suggested band structure implying transitions from a flat conduction band to a degenerate valence band. Removal of small amounts of lithium significantly modifies the photoluminescence spectra including additional larger than stoichiometric-band gap features. Sufficient removal of lithium results in the elimination of the photoluminescence response supporting the predicted transition from a direct to indirect band gap semiconductor. In addition, non-thermal coupling between the incident laser and lithium ions is observed and results in modulation of the electrical impedance

Ion-beam induced chemical and structural modification in polymers

Czech Academy of Sciences Publication Activity Database

Guenther, M.; Gerlach, G.; Suchaneck, G.; Sahre, K.; Eichorn, K. J.; Wolf, B.; Deineka, Alexander; Jastrabík, Lubomír

158-159, - (2002), s. 108-113 ISSN 0257-8972 Grant - others:Ge(DE) 779/6-1 Institutional research plan: CEZ:AV0Z1010914 Keywords : polyimide * polyethersulfone- hardness * conductivity * polymer structure * ion implantation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.267, year: 2002

Ion beam modification of sputtered metal nitride thin films: A study of the induced microstructural changes

International Nuclear Information System (INIS)

Milosavljevic, M.; Perusko, D.; Popovic, M.; Novakovic, M.

2008-01-01

Single CrN and TiN and multilayered AlN/TiN and Al/Ti thin film structures (t = 240-280 nm) deposited on Si were irradiated with 120-200 keV Ar + ions to the fluences ranging from 1 x 10 11 5 to 4 x 10 16 ions/cm 2 . The metallic Al/Ti multilayered structure was also irradiated with high fluence (1- 2 x 10 17 /cm 2 ) nitrogen ions at 200 keV, in order to study interface mixing and formation of nitrides. Single component CrN and TiN thin films were found to grow in the form of a very fine polycrystalline columnar structures. Individual crystal grains were of the order of a few tens of nm in diameter, stretching from the substrate to the surface. After ion irradiation, the layers retain their polycrystalline structure, although the columns become disconnected, the resulting structures consisting of larger grains and nano-particles of the same phase. The implanted samples displayed higher electrical resistivity, presumably due to a higher concentration of point defects and the presence of nano-particles. In Al/Ti and AlN/TiN multilayers irradiated with Ar ions, the as-deposited structures exhibit well-defined, isolated polycrystalline Al and Ti, or AlN and TiN layers, with sharp interfaces. In the metallic system ion irradiation induced interface mixing which progressed with increasing the ion fluence. Mixing was most pronounced at the interfaces that are located around the projected ion range. The multilayered structure was essentially preserved, but the implanted samples exhibit much larger crystal grains. Also, the formation of lamellar columns stretching over a number of individual layers was observed. The AlN/TiN multilayered structures exhibited no measurable interface mixing on Ar irradiation, attributable to the nature of interatomic bonding and to mutual immiscibility of AlN and TiN. High fluence nitrogen ion irradiation of Al/Ti multilayers results in both the introduction of nitrogen into the structures as well as a high level of their intermixing. A

New facility for ion beam materials characterization and modification at Los Alamos

International Nuclear Information System (INIS)

Tesmer, J.R.; Maggiore, C.J.; Parkin, D.M.

1988-01-01

The Ion Beam Materials Laboratory (IBML) is a new Los Alamos laboratory devoted to the characterization and modification of the near surfaces of materials. The primary instruments of the IBML are a tandem electrostatic accelerator, a National Electrostatics Corp. Model 9SDH, coupled with a Varian CF-3000 ion implanter. The unique organizational structure of the IBML as well as the operational characteristics of the 9SDH (after approximately 3000 h of operation) and the laboratories' research capabilities will be discussed. Examples of current research results will also be presented. 5 refs., 2 figs

In situ transmission electron microscope studies of ion irradiation-induced and irradiation-enhanced phase changes

International Nuclear Information System (INIS)

Allen, C.W.

1992-01-01

Motivated at least initially by materials needs for nuclear reactor development, extensive irradiation effects studies employing transmission electron microscopes (TEM) have been performed for several decades, involving irradiation-induced and irradiation-enhanced microstructural changes, including phase transformations such as precipitation, dissolution, crystallization, amorphization, and order-disorder phenomena. From the introduction of commercial high voltage electron microscopes (HVEM) in the mid-1960s, studies of electron irradiation effects have constituted a major aspect of HVEM application in materials science. For irradiation effects studies two additional developments have had particularly significant impact; the development of TEM specimen holder sin which specimen temperature can be controlled in the range 10-2200 K and the interfacing of ion accelerators which allows in situ TEM studies of irradiation effects and the ion beam modification of materials within this broad temperature range. This paper treats several aspects of in situ studies of electron and ion beam-induced and enhanced phase changes and presents two case studies involving in situ experiments performed in an HVEM to illustrate the strategies of such an approach of the materials research of irradiation effects

Proceedings of the 20th International Conference on Ion Beam Modification of Materials (IBMM 2016)

Science.gov (United States)

Kennedy, John; Elliman, Robert; Mccallum, Jeffrey; Ionescu, Mihail; Markwitz, Andreas

2017-10-01

The papers in this issue of NIMB were presented at the 20th international conference on Ion Beam Modification of Materials (IBMM) held at Te Papa Museum, Wellington, New Zealand from October 30th until November 4th, 2016. This conference continued the proud legacy of New Zealand-born Lord Rutherford and his pioneering research in ion beam physics.

Ion-irradiation-induced microstructural modifications in ferritic/martensitic steel T91

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiang; Miao, Yinbin; Li, Meimei; Kirk, Marquis A.; Maloy, Stuart A.; Stubbins, James F.

2017-07-01

In this paper, in situ transmission electron microscopy investigations were carried out to study the microstructural evolution of ferritic/martensitic steel T91 under 1 MeV Krypton ion irradiation up to 4.2 x 10(15) ions/cm(2) at 573 K, 673 K, and 773 K. At 573 K, grown-in defects are strongly modified by black dot loops, and dislocation networks together with black-dot loops were observed after irradiation. At 673 K and 773 K, grown-in defects are only partially modified by dislocation loops; isolated loops and dislocation segments were commonly found after irradiation. Post irradiation examination indicates that at 4.2 x 1015 ions/cm(2), about 51% of the loops were a(0)/2 < 111 > type for the 673 K irradiation, and the dominant loop type was a(0)< 100 > for the 773 K irradiation. Finally, a dispersed barrier hardening model was employed to estimate the change in yield strength, and the calculated ion data were found to follow the similar trend as the existing neutron data with an offset of 100-150 MPa. (C) 2017 Elsevier B.V. All rights reserved.

Surface structure modification of single crystal graphite after slow, highly charged ion irradiation

Science.gov (United States)

Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.

2018-04-01

Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.

Ion beam induced luminescence from diamond using an MeV ion microprobe

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A.A.; Jamieson, D. N.; Prawer, S.; Allen, M.G. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1993-12-31

Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

Ion beam induced luminescence from diamond using an MeV ion microprobe

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A A; Jamieson, D N; Prawer, S; Allen, M G [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1994-12-31

Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

Beam-induced magnetic property modifications: Basics, nanostructure fabrication and potential applications

International Nuclear Information System (INIS)

Devolder, T.; Bernas, H.; Ravelosona, D.; Chappert, C.; Pizzini, S.; Vogel, J.; Ferre, J.; Jamet, J.-P.; Chen, Y.; Mathet, V.

2001-01-01

We have developed an irradiation technique that allows us to tune the magnetic properties of thin films without affecting their roughness. We discuss the mechanisms involved and the applications. He + ion irradiation of Co/Pt multilayers lowers their magnetic anisotropy in a controlled way, reducing the coercive force and then leading to in-plane magnetization. By X-ray reflectometry, we study how irradiation-induced structural modifications correlate with magnetic properties. We also report the L1 0 chemical ordering of FePt by irradiation at 280 deg. C, and the consequent increase of magnetic anisotropy. Planar magnetic patterning at the sub 50 nm scale can be achieved when the irradiation is performed through a mask. New magnetic behaviors result from the fabrication process. They appear to arise from collateral damage. We model these effects in the case of SiO 2 and W masks. The planarity of irradiation-induced patterning and its ability to independently control nanostructure size and coercivity make it very appealing for magnetic recording on nanostructured media. Finally, possible applications to the granular media used in current hard disk drive storage technology are discussed

Evidence of ion intercalation mediated band structure modification and opto-ionic coupling in lithium niobite

Energy Technology Data Exchange (ETDEWEB)

Shank, Joshua C.; Tellekamp, M. Brooks; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

2015-01-21

The theoretically suggested band structure of the novel p-type semiconductor lithium niobite (LiNbO{sub 2}), the direct coupling of photons to ion motion, and optically induced band structure modifications are investigated by temperature dependent photoluminescence. LiNbO{sub 2} has previously been used as a memristor material but is shown here to be useful as a sensor owing to the electrical, optical, and chemical ease of lithium removal and insertion. Despite the high concentration of vacancies present in lithium niobite due to the intentional removal of lithium atoms, strong photoluminescence spectra are observed even at room temperature that experimentally confirm the suggested band structure implying transitions from a flat conduction band to a degenerate valence band. Removal of small amounts of lithium significantly modifies the photoluminescence spectra including additional larger than stoichiometric-band gap features. Sufficient removal of lithium results in the elimination of the photoluminescence response supporting the predicted transition from a direct to indirect band gap semiconductor. In addition, non-thermal coupling between the incident laser and lithium ions is observed and results in modulation of the electrical impedance.

Modification of polyvinyl alcohol surface properties by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Pukhova, I.V., E-mail: ivpuhova@mail.ru [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Kurzina, I.A. [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Savkin, K.P. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Laput, O.A. [National Research Tomsk Polytechnic University, 30 Lenin Ave, Tomsk 634050 (Russian Federation); Oks, E.M. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation)

2017-05-15

We describe our investigations of the surface physicochemical properties of polyvinyl alcohol modified by silver, argon and carbon ion implantation to doses of 1 × 10{sup 14}, 1 × 10{sup 15} and 1 × 10{sup 16} ion/cm{sup 2} and energies of 20 keV (for C and Ar) and 40 keV (for Ag). Infrared spectroscopy (IRS) indicates that destructive processes accompanied by chemical bond (−C=O) generation are induced by implantation, and X-ray photoelectron spectroscopy (XPS) analysis indicates that the implanted silver is in a metallic Ag3d state without stable chemical bond formation with polymer chains. Ion implantation is found to affect the surface energy: the polar component increases while the dispersion part decreases with increasing implantation dose. Surface roughness is greater after ion implantation and the hydrophobicity increases with increasing dose, for all ion species. We find that ion implantation of Ag, Ar and C leads to a reduction in the polymer microhardness by a factor of five, while the surface electrical resistivity declines modestly.

Characterization of carbon ion-induced mutations in Arabidopsis thaliana

International Nuclear Information System (INIS)

Shikazono, N.; Suzuki, C.; Kitamura, S.; Watanabe, H.; Tano, S.; Tanaka, A.

2003-01-01

Full text: Irradiation of Arabidopsis thaliana by carbon ions was carried out to investigate the mutational effect of ion particles in higher plants. The averaged mutation rate of carbon ions was 2.0 X 10 -6 / Gy, which was 18-fold higher than that of electrons. PCR analysis of the carbon ion-induced mutants showed that, out of 28 mutant alleles, 14 had point-like mutations within the gene, while 14 contained large structural alterations. In the case of 12 electron-induced mutants, 9 had point-like mutations within the gene, while 3 contained large structural alterations. These results suggest that carbon ions are more likely to induce large structural alterations compared with electrons. Further sequence analysis revealed that most of the point-like mutations induced by carbon ions were short deletions. In the case of rearrangements, DNA strand breaks were found to be rejoined using, if present, short homologous sequences for both types of radiation. After carbon ion-irradiation, small deletions were frequently observed around the breakpoints, whereas duplications of terminal sequence were found after electron-irradiation. These results suggest that non-homologous end joining (NHEJ) pathway operates after plant cells are exposed to both ion particles and electrons but that different mode of rejoining deals with the broken ends produced by each radiation. From the present results, it seems reasonable to assume that carbon ions could predominantly induce null mutations in Arabidopsis. The fact that the molecular nature of carbon ion-induced mutation was different from that of electrons and that the molecular mechanisms of cells to induce mutations appeared to be also different implicates that ion particle is not only valuable as a new mutagen but also useful as a new tool to study repair mechanisms of certain types of DNA damage

Study of structural modifications induced by ion implantation in austenitic stainless steel; Etude des modifications structurales induites par implantation ionique dans les aciers austenitiques

Energy Technology Data Exchange (ETDEWEB)

Dudognon, J

2006-12-15

Ion implantation in steels, although largely used to improve the properties of use, involves structural modifications of the surface layer, which remain still prone to controversies. Within this context, various elements (N, Ar, Cr, Mo, Ag, Xe and Pb) were implanted (with energies varying from 28 to 280 keV) in a 316LVM austenitic stainless steel. The implanted layer has a thickness limited to 80 nm and a maximum implanted element concentration lower than 10 % at. The analysis of the implanted layer by grazing incidence X ray diffraction highlights deformations of austenite lines, appearance of ferrite and amorphization of the layer. Ferritic phase which appears at the grain boundaries, whatever the implanted element, is formed above a given 'threshold' of energy (produced of fluency by the energy of an ion). The formation of ferrite as well as the amorphization of the implanted layer depends only on energy. In order to understand the deformations of austenite diffraction lines, a simulation model of these lines was elaborated. The model correctly describes the observed deformations (broadening, shift, splitting) with the assumption that the expansion of the austenitic lattice is due to the presence of implanted element and is proportional to the element concentration through a coefficient k'. This coefficient only depends on the element and varies linearly with its radius. (author)

Surface modifications of AISI 420 stainless steel by low energy Yttrium ions

Science.gov (United States)

Nassisi, Vincenzo; Delle Side, Domenico; Turco, Vito; Martina, Luigi

2018-01-01

In this work, we study surface modifications of AISI 420 stainless steel specimens in order to improve their surface properties. Oxidation resistance and surface micro-hardness were analyzed. Using an ion beam delivered by a Laser Ion Source (LIS) coupled to an electrostatic accelerator, we performed implantation of low energy yttrium ions on the samples. The ions experienced an acceleration passing through a gap whose ends had a potential difference of 60 kV. The gap was placed immediately before the samples surface. The LIS produced high ions fluxes per laser pulse, up to 3x1011 ions/cm2, resulting in a total implanted flux of 7x1015 ions/cm2. The samples were characterized before and after ion implantation using two analytical techniques. They were also thermally treated to investigate the oxide scale. The crystal phases were identified by an X-ray diffractometer, while the micro-hardness was assayed using the scratch test and a profilometer. The first analysis was applied to blank, implanted and thermally treated sample surface, while the latter was applied only to blank and implanted sample surfaces. We found a slight increase in the hardness values and an increase to oxygen resistance. The implantation technique we used has the advantages, with respect to conventional methods, to modify the samples at low temperature avoiding stray diffusion of ions inside the substrate bulk.

Surface modifications of AISI 420 stainless steel by low energy Yttrium ions

Directory of Open Access Journals (Sweden)

Nassisi Vincenzo

2018-01-01

Full Text Available In this work, we study surface modifications of AISI 420 stainless steel specimens in order to improve their surface properties. Oxidation resistance and surface micro-hardness were analyzed. Using an ion beam delivered by a Laser Ion Source (LIS coupled to an electrostatic accelerator, we performed implantation of low energy yttrium ions on the samples. The ions experienced an acceleration passing through a gap whose ends had a potential difference of 60 kV. The gap was placed immediately before the samples surface. The LIS produced high ions fluxes per laser pulse, up to 3x1011 ions/cm2, resulting in a total implanted flux of 7x1015 ions/cm2. The samples were characterized before and after ion implantation using two analytical techniques. They were also thermally treated to investigate the oxide scale. The crystal phases were identified by an X-ray diffractometer, while the micro-hardness was assayed using the scratch test and a profilometer. The first analysis was applied to blank, implanted and thermally treated sample surface, while the latter was applied only to blank and implanted sample surfaces. We found a slight increase in the hardness values and an increase to oxygen resistance. The implantation technique we used has the advantages, with respect to conventional methods, to modify the samples at low temperature avoiding stray diffusion of ions inside the substrate bulk.

Initial stages of ion beam-induced phase transformations in Gd2O3 and Lu2O3

Science.gov (United States)

Chen, Chien-Hung; Tracy, Cameron L.; Wang, Chenxu; Lang, Maik; Ewing, Rodney C.

2018-02-01

The atomic-scale evolution of lanthanide sesquioxides Gd2O3 and Lu2O3 irradiated with 1 MeV Kr ions at room temperature and 120 K, up to fluences of 1 × 1016 ions/cm2 (˜20 dpa), has been characterized by in situ transmission electron microscopy. At room temperature, both oxides exhibited high radiation tolerance. Irradiation did not cause any observable structural change in either material, likely due to the mobility of irradiation-induced point defects, causing efficient defect annihilation. For Gd2O3, having the larger cation ionic radius of the two materials, an irradiation-induced stacking fault structure appeared at low fluences in the low temperature irradiation. As compared with the cubic-to-monoclinic phase transformations known to result from higher energy (˜GeV) ion irradiation, Kr ions of lower energies (˜MeV) yield much lower rates of damage accumulation and thus less extensive structural modification. At a fluence of 2.5 × 1015 ions/cm2, only the initial stages of the cubic-to-monoclinic (C to B) phase transformation process, consisting of the formation and aggregation of defects, have been observed.

Nanometer-size surface modification produced by single, low energy, highly charged ions

International Nuclear Information System (INIS)

Stockli, M.P.

1994-01-01

Atomically flat surfaces of insulators have been bombarded with low energy, highly charged ions to search for nanometer-size surface modifications. It is expected that the high electron deficiency of highly charged ions will capture and/or remove many of the insulator's localized electrons when impacting on an insulating surface. The resulting local electron deficiency is expected to locally disintegrate the insulator through a open-quotes Coulomb explosionclose quotes forming nanometer-size craters. Xe ions with charge states between 10+ and 45+ and kinetic energies between 0 and 10 keV/q were obtained from the KSU-CRYEBIS, a CRYogenic Electron Beam Ion Source and directed onto various insulating materials. Mica was favored as target material as atomically flat surfaces can be obtained reliably through cleaving. However, the authors observations with an atomic force microscope have shown that mica tends to defoliate locally rather than disintegrate, most likely due to the small binding forces between adjacent layers. So far the authors measurements indicate that each ion produces one blister if the charge state is sufficiently high. The blistering does not seem to depend very much on the kinetic energy of the ions

Swift heavy ion-beam induced amorphization and recrystallization of yttrium iron garnet

International Nuclear Information System (INIS)

Costantini, Jean-Marc; Miro, Sandrine; Beuneu, François; Toulemonde, Marcel

2015-01-01

Pure and (Ca and Si)-substituted yttrium iron garnet (Y 3 Fe 5 O 12 or YIG) epitaxial layers and amorphous films on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , or GGG) single crystal substrates were irradiated by 50 MeV 32 Si and 50 MeV (or 60 MeV) 63 Cu ions for electronic stopping powers larger than the threshold value (∼4 MeV μm −1 ) for amorphous track formation in YIG crystals. Conductivity data of crystalline samples in a broad ion fluence range (10 11 –10 16 cm −2 ) are modeled with a set of rate equations corresponding to the amorphization and recrystallization induced in ion tracks by electronic excitations. The data for amorphous layers confirm that a recrystallization process takes place above ∼10 14 cm −2 . Cross sections for both processes deduced from this analysis are discussed in comparison to previous determinations with reference to the inelastic thermal-spike model of track formation. Micro-Raman spectroscopy was also used to follow the related structural modifications. Raman spectra show the progressive vanishing and randomization of crystal phonon modes in relation to the ion-induced damage. For crystalline samples irradiated at high fluences (⩾10 14 cm −2 ), only two prominent broad bands remain like for amorphous films, thereby reflecting the phonon density of states of the disordered solid, regardless of samples and irradiation conditions. The main band peaked at ∼660 cm −1 is assigned to vibration modes of randomized bonds in tetrahedral (FeO 4 ) units. (paper)

Modification of high density polyethylene by gold implantation using different ion energies

Energy Technology Data Exchange (ETDEWEB)

Nenadović, M.; Potočnik, J. [INS Vinca, Laboratory of Atomic Physics, University of Belgrade, Mike Alasa 12–14, 11001 Belgrade (Serbia); Mitrić, M. [INS Vinca, Condensed Matter Physics Laboratory, University of Belgrade, Mike Alasa 12–14, 11001 Belgrade (Serbia); Štrbac, S. [ICTM Institute of Electrochemistry, University of Belgrade, Njegoseva 12, 11001 Belgrade (Serbia); Rakočević, Z., E-mail: zlatkora@vinca.rs [INS Vinca, Laboratory of Atomic Physics, University of Belgrade, Mike Alasa 12–14, 11001 Belgrade (Serbia)

2013-11-01

High density polyethylene (HDPE) samples were modified by Au{sup +} ion implantation at a dose of 5 × 10{sup 15} ions cm{sup −2}, using energies of 50, 100, 150 and 200 keV. The existence of implanted gold in the near-surface region of HDPE samples was confirmed by X-ray diffraction analysis. Surface roughness and Power Spectral Density analyses based on Atomic Force Microscopy (AFM) images of the surface topography revealed that the mechanism of HDPE modification during gold ion implantation depended on the energy of gold ions. Histograms obtained from phase AFM images indicated a qualitative change in the chemical composition of the surface during implantation with gold ions with different energies. Depth profiles obtained experimentally from cross-sectional Force Modulation Microscopy images and ones obtained from a theoretical simulation are in agreement for gold ions energies lower than 100 keV. The deviation that was observed for higher energies of the gold ions is explained by carbon precipitation in the near surface region of the HDPE, which prevented the penetration of gold ions further into the depth of the sample. - Highlights: • HDPE was implanted by Au{sup +} ions using energies of 50, 100, 150 and 200 keV. • Surface composition was analyzed from phase AFM images. • FMM depth profiles are in agreement with theoretical ones for energies up to 100 keV. • A deviation is observed for higher gold ion energies.

Modification of high density polyethylene by gold implantation using different ion energies

International Nuclear Information System (INIS)

Nenadović, M.; Potočnik, J.; Mitrić, M.; Štrbac, S.; Rakočević, Z.

2013-01-01

High density polyethylene (HDPE) samples were modified by Au + ion implantation at a dose of 5 × 10 15 ions cm −2 , using energies of 50, 100, 150 and 200 keV. The existence of implanted gold in the near-surface region of HDPE samples was confirmed by X-ray diffraction analysis. Surface roughness and Power Spectral Density analyses based on Atomic Force Microscopy (AFM) images of the surface topography revealed that the mechanism of HDPE modification during gold ion implantation depended on the energy of gold ions. Histograms obtained from phase AFM images indicated a qualitative change in the chemical composition of the surface during implantation with gold ions with different energies. Depth profiles obtained experimentally from cross-sectional Force Modulation Microscopy images and ones obtained from a theoretical simulation are in agreement for gold ions energies lower than 100 keV. The deviation that was observed for higher energies of the gold ions is explained by carbon precipitation in the near surface region of the HDPE, which prevented the penetration of gold ions further into the depth of the sample. - Highlights: • HDPE was implanted by Au + ions using energies of 50, 100, 150 and 200 keV. • Surface composition was analyzed from phase AFM images. • FMM depth profiles are in agreement with theoretical ones for energies up to 100 keV. • A deviation is observed for higher gold ion energies

Surface modification of glass beads with glutaraldehyde: Characterization and their adsorption property for metal ions

Energy Technology Data Exchange (ETDEWEB)

Ozmen, Mustafa; Can, Keziban; Akin, Ilker; Arslan, Gulsin [Department of Chemistry, Selcuk University, 42031, Konya (Turkey); Tor, Ali, E-mail: ali.alitor@gmail.com [Department of Environmental Engineering, Selcuk University, Engineering Faculty, Campus, 42031, Konya (Turkey); Cengeloglu, Yunus; Ersoz, Mustafa [Department of Chemistry, Selcuk University, 42031, Konya (Turkey)

2009-11-15

In this study, a new material that adsorbs the metal ions was prepared by modification of the glass beads surfaces with glutaraldehyde. First, the glass beads were etched with 4 M NaOH solution. Then, they were reacted with 3-aminopropyl-triethoxysilane (APTES). Finally, silanized glass beads were treated with 25% of glutaraldehyde solution. The characterization studies by using Fourier Transform Infrared Spectroscopy (FT-IR), Thermal Gravimetric Analysis (TGA), elemental analysis and Scanning Electron Microscopy (SEM) indicated that modification of the glass bead surfaces was successfully performed. The adsorption studies exhibited that the modified glass beads could be efficiently used for the removal of the metal cations and anion (chromate ion) from aqueous solutions via chelation and ion-exchange mechanisms. For both Pb(II) and Cr(VI), selected as model ions, the adsorption equilibrium was achieved in 60 min and adsorption of both ions followed the second-order kinetic model. It was found that the sorption data was better represented by the Freundlich isotherm in comparison to the Langmuir and Redlich-Peterson isotherm models. The maximum adsorption capacities for Pb(II) and Cr(VI) were 9.947 and 11.571 mg/g, respectively. The regeneration studies also showed that modified glass beads could be re-used for the adsorption of Pb(II) and Cr(VI) from aqueous solutions over three cycles.

Mono and sequential ion irradiation induced damage formation and damage recovery in oxide glasses: Stopping power dependence of the mechanical properties

International Nuclear Information System (INIS)

Mir, A.H.; Monnet, I.; Toulemonde, M.; Bouffard, S.; Jegou, C.; Peuget, S.

2016-01-01

Simple and complex borosilicate glasses were irradiated with single and double ion beams of light and heavy ions over a broad fluence and stopping power range. As a result of the heavy ion irradiation (U, Kr, Au), the hardness was observed to diminish and saturate after a decrease by 35 ± 1%. Unlike slow and swift heavy ion irradiation, irradiation with light ions (He,O) induced a saturation hardness decrease of 18 ± 1% only. During double ion beam irradiation; where glasses were first irradiated with a heavy ion (gold) and then by a light ion (helium), the light ion irradiation induced partial damage recovery. As a consequence of the recovery effect, the hardness of the pre-irradiated glasses increased by 10–15% depending on the chemical composition. These results highlight that the nuclear energy loss and high electronic energy loss (≥4 keV/nm) result in significant and similar modifications whereas light ions with low electronic energy loss (≤1 keV/nm) result in only mild damage formation in virgin glasses and recovery in highly pre-damaged glasses. These results are important to understand the damage formation and recovery in actinide bearing minerals and in glasses subjected to self-irradiation by alpha decays. - Highlights: • Behavior of glasses strongly depends on the electronic energy loss (Se) of the ions. • High Se (≥4 keV/nm) induces large changes in comparison to lower Se values. • Apart from mild damage formation, low Se causes recovery of pre-existing damage. • Alpha induced partial recovery of the damage would occur in nuclear waste glasses.

Heavy-Ion-Induced Electronic Desorption of Gas from Metals

CERN Document Server

Molvik, A W; Mahner, E; Kireeff Covo, M; Bellachioma, M C; Bender, M; Bieniosek, F M; Hedlund, E; Krämer, A; Kwan, J; Malyshev, O B; Prost, L; Seidl, P A; Westenskow, G; Westerberg, L

2007-01-01

During heavy-ion operation in several particle accelerators worldwide, dynamic pressure rises of orders of magnitude were triggered by lost beam ions that bombarded the vacuum chamber walls. This ion-induced molecular desorption, observed at CERN, GSI, and BNL, can seriously limit the ion beam lifetime and intensity of the accelerator. From dedicated test stand experiments we have discovered that heavy-ion-induced gas desorption scales with the electronic energy loss (dEe/dx) of the ions slowing down in matter; but it varies only little with the ion impact angle, unlike electronic sputtering.

Pulse explosion ion beam source with one pulse regime supply for surface modification of materials

International Nuclear Information System (INIS)

Korenev, S.A.

1989-01-01

A variant of explosion ion beam source with one positive pulse supply for surface modification of materials is described. Ion source consists of vacuum diode and pulse generator Arcadiev-Marx type. Residual gas pressure was p∼5x10 -5 torr in the diode. The sort of ions was fixed by materials initiator anode plasma. The produce carbon ions a carbon-fibrous initiator is used for niobium and titanium-niobium-titanium cable with picking copper matrix. The ions density current regulation is realized by by change of diode gap in the correspondence with Child-Langmuir law. For carbon ions the current density is j∼6A/cm 2 for voltage U∼100kV and j∼32A/cm 2 for voltage U∼300 kV. 7 refs.; 1 fig

The influence of the PDMS technique in the study of the induced modifications of polymers used in nuclear environment; Apport de la technique PDMS a l`etude des modifications induites dans des polymeres utilises en ambiance nucleaire

Energy Technology Data Exchange (ETDEWEB)

Nsouli, B [Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire

1995-07-20

The PDMS technique (Particle Induced Desorption Mass Spectrometry) combined with a TOF detection (Time of Flight) is the main tool used in this study of polymer degradation in nuclear environment. Ar{sup 3+} ions with a 9 MeV energy have been used to induce the secondary ion emission, and the study was devoted to two stresses typical of this type of environment. The first part of the work concerned with the structural modifications induced by gamma irradiation on ion exchange resin, used for nuclear effluents reprocessing, namely the poly(4-vinylpyridine), or P-4PV. For such a material, the negative fragment emission is particularly sensitive to structural modifications. Difficult physical measurements in such an insoluble and infusible material (IR, UV - Vis, EPR, TGA, dielectric measurements) became consistent after the degradation mechanisms were elucidated. These effects, interpreted in terms of scissions and recombinations, enabled us to explicit different modes of energy deposition, and shed light on some discrepancies between SIMS and PDMS. The second part of the study is devoted to the thermal ageing of an elastomer, used in fabrication of valve gaskets submitted to high temperatures. First of all, we studied the constituents of the polymeric material, i. e. copolymer, homo polymers, and also additives. This last component proved useful to analyze, as a superficial lubricant layer can mask the conformational rearrangements which seem to occur after few hours of thermal treatment (PE blocks are prevailing at the surface). Here too, the PDMS information is important to account for static SIMS and ESCA results, as its probed layer thickness lies in-between. (author) 187 refs.

Surface and local electronic structure modification of MgO film using Zn and Fe ion implantation

Science.gov (United States)

Singh, Jitendra Pal; Lim, Weon Cheol; Lee, Jihye; Song, Jonghan; Lee, Ik-Jae; Chae, Keun Hwa

2018-02-01

Present work is motivated to investigate the surface and local electronic structure modifications of MgO films implanted with Zn and Fe ions. MgO film was deposited using radio frequency sputtering method. Atomic force microscopy measurements exhibit morphological changes associated with implantation. Implantation of Fe and Zn ions leads to the reduction of co-ordination geometry of Mg2+ ions in host lattice. The effect is dominant at bulk of film rather than surface as the large concentration of implanted ions resides inside bulk. Moreover, the evidences of interaction among implanted ions and oxygen are not being observed using near edge fine structure measurements.

Radiation-induced radical ions in calcium sulfite

Science.gov (United States)

Bogushevich, S. E.

2006-07-01

We have used EPR to study the effect of γ radiation on calcium sulfite. We have observed and identified the radiation-induced radical ions SO 2 - (iso) with g = 2.0055 and SO 2 - (orth-1) with g1 = 2.0093, g2 = 2.0051, g3 = 2.0020, identical to the initial and thermally induced SO 2 - respectively, SO 3 - (iso) with g = 2.0031 and SO 3 - (axial) with g⊥ = 2.0040, g∥ = 2.0023, identical to mechanically induced SO 3 - . We have established the participation of radiation-induced radical ions SO 3 - in formation of post-radiation SO 2 - .

Specific histone modification responds to arsenic-induced oxidative stress

Energy Technology Data Exchange (ETDEWEB)

Ma, Lu [Department of Toxicology, Guangzhou Key Laboratory of Environmental Pollution and Health Risk Assessment, School of Public Health, Sun Yat-sen University, Guangzhou (China); Li, Jun [Key Laboratory of Environmental Pollution Monitoring and Disease Control, Ministry of Education, Department of Toxicology, School of Public Health, Guizhou Medical University, Guiyang, Guizhou (China); Zhan, Zhengbao; Chen, Liping; Li, Daochuan; Bai, Qing; Gao, Chen; Li, Jie; Zeng, Xiaowen; He, Zhini; Wang, Shan; Xiao, Yongmei [Department of Toxicology, Guangzhou Key Laboratory of Environmental Pollution and Health Risk Assessment, School of Public Health, Sun Yat-sen University, Guangzhou (China); Chen, Wen, E-mail: chenwen@mail.sysu.edu.cn [Department of Toxicology, Guangzhou Key Laboratory of Environmental Pollution and Health Risk Assessment, School of Public Health, Sun Yat-sen University, Guangzhou (China); Zhang, Aihua, E-mail: aihuagzykd@163.com [Key Laboratory of Environmental Pollution Monitoring and Disease Control, Ministry of Education, Department of Toxicology, School of Public Health, Guizhou Medical University, Guiyang, Guizhou (China)

2016-07-01

To explore whether specific histone modifications are associated with arsenic-induced oxidative damage, we recruited 138 arsenic-exposed and arsenicosis subjects from Jiaole Village, Xinren County of Guizhou province, China where the residents were exposed to arsenic from indoor coal burning. 77 villagers from Shang Batian Village that were not exposed to high arsenic coal served as the control group. The concentrations of urine and hair arsenic in the arsenic-exposure group were 2.4-fold and 2.1-fold (all P < 0.001) higher, respectively, than those of the control group. Global histone modifications in human peripheral lymphocytes (PBLCs) were examined by ELISA. The results showed that altered global levels of H3K18ac, H3K9me2, and H3K36me3 correlated with both urinary and hair-arsenic levels of the subjects. Notably, H3K36me3 and H3K18ac modifications were associated with urinary 8-OHdG (H3K36me3: β = 0.16; P = 0.042, H3K18ac: β = − 0.24; P = 0.001). We also found that the modifications of H3K18ac and H3K36me3 were enriched in the promoters of oxidative stress response (OSR) genes in human embryonic kidney (HEK) cells and HaCaT cells, providing evidence that H3K18ac and H3K36me3 modifications mediate transcriptional regulation of OSR genes in response to NaAsO{sub 2} treatment. Particularly, we found that reduced H3K18ac modification correlated with suppressed expression of OSR genes in HEK cells with long term arsenic treatment and in PBLCs of all the subjects. Taken together, we reveal a critical role for specific histone modification in response to arsenic-induced oxidative damage. - Highlights: • H3K18ac, H3K9me2 and H3K36me3 were associated with arsenic exposed levels. • H3K18ac and H3K36me3 were correlated with oxidative damage induced by arsenic. • H3K18ac and H3K36me3 might involve in transcriptional regulation of OSR genes. • Dysregulation of H3K18ac and H3K36me3 might be biomarkers of arsenic toxicity.

Specific histone modification responds to arsenic-induced oxidative stress

International Nuclear Information System (INIS)

Ma, Lu; Li, Jun; Zhan, Zhengbao; Chen, Liping; Li, Daochuan; Bai, Qing; Gao, Chen; Li, Jie; Zeng, Xiaowen; He, Zhini; Wang, Shan; Xiao, Yongmei; Chen, Wen; Zhang, Aihua

2016-01-01

To explore whether specific histone modifications are associated with arsenic-induced oxidative damage, we recruited 138 arsenic-exposed and arsenicosis subjects from Jiaole Village, Xinren County of Guizhou province, China where the residents were exposed to arsenic from indoor coal burning. 77 villagers from Shang Batian Village that were not exposed to high arsenic coal served as the control group. The concentrations of urine and hair arsenic in the arsenic-exposure group were 2.4-fold and 2.1-fold (all P < 0.001) higher, respectively, than those of the control group. Global histone modifications in human peripheral lymphocytes (PBLCs) were examined by ELISA. The results showed that altered global levels of H3K18ac, H3K9me2, and H3K36me3 correlated with both urinary and hair-arsenic levels of the subjects. Notably, H3K36me3 and H3K18ac modifications were associated with urinary 8-OHdG (H3K36me3: β = 0.16; P = 0.042, H3K18ac: β = − 0.24; P = 0.001). We also found that the modifications of H3K18ac and H3K36me3 were enriched in the promoters of oxidative stress response (OSR) genes in human embryonic kidney (HEK) cells and HaCaT cells, providing evidence that H3K18ac and H3K36me3 modifications mediate transcriptional regulation of OSR genes in response to NaAsO 2 treatment. Particularly, we found that reduced H3K18ac modification correlated with suppressed expression of OSR genes in HEK cells with long term arsenic treatment and in PBLCs of all the subjects. Taken together, we reveal a critical role for specific histone modification in response to arsenic-induced oxidative damage. - Highlights: • H3K18ac, H3K9me2 and H3K36me3 were associated with arsenic exposed levels. • H3K18ac and H3K36me3 were correlated with oxidative damage induced by arsenic. • H3K18ac and H3K36me3 might involve in transcriptional regulation of OSR genes. • Dysregulation of H3K18ac and H3K36me3 might be biomarkers of arsenic toxicity.

SPS Ion Induced Desorption Experiment

CERN Multimedia

Maximilien Brice

2003-01-01

This experiment will give a study about the induced desorption from heavy ion (Indium ion run from week 45 in SPS T4-H8 area) impacting LHC type graphite collimator. 4 different samples are located in the 4 chambers 90° one to each other: pure graphite, graphite with copper coating, graphite with NEG coating, 316LN stainless steal (reference).

Ion Heating by Fast Particle Induced Alfven Turbulence

International Nuclear Information System (INIS)

Gates, D.; Gorelenkov, N.; White, R.B.

2001-01-01

A novel mechanism that directly transfers energy from Super-Alfvenic energetic ions to thermal ions in high-beta plasmas is described. The mechanism involves the excitation of compressional Alfvin eigenmodes (CAEs) in the frequency range with omega less than or approximately equal to omega(subscript ci). The broadband turbulence resulting from the large number of excited modes causes stochastic diffusion in velocity space, which transfers wave energy to thermal ions. This effect may be important on the National Spherical Torus Experiment (NSTX), and may scale up to reactor scenarios. This has important implications for low aspect ratio reactor concepts, since it potentially allows for the modification of the ignition criterion

Modification of radiation-induced murine thymic lymphoma incidence by curcumin

International Nuclear Information System (INIS)

Dange, P.S.; Yadav, H.D.; Kumar, Vimalesh; Bhilwade, H.N.; Pandey, B.N.; Sarma, H.D.

2017-01-01

Curcumin is a known antioxidant, preventing radiation damage including carcinogenesis. However, concentration and feeding schedule of curcumin in modification of radiation induced thymic lymphoma incidence in vivo model has not been studied. We report here modification of incidence of γ-radiation-induced thymic lymphoma in mice fed with different doses of curcumin (0.05 to 1 %) in diet. Results: Female Swiss mice (6-8 weeks) fed with normal diet and exposed to 3 Gy whole body "6"0Co γ-irradiation (WBI) showed 85 % incidence of thymic lymphoma (TL) at 120 days post-irradiation. A concentration of 1 % curcumin was found the most effective in TL incidence prevention than other fed concentrations. The TL incidence was remarkably reduced when curcumin was fed to the mice before than after the radiation exposure. These results suggest modification of TL incidence by curcumin in irradiated mice involving DNA damage and apoptotic death mechanisms

Laser induced fluorescence of trapped molecular ions

Energy Technology Data Exchange (ETDEWEB)

Grieman, F.J.

1979-10-01

An experimental apparatus for obtaining the optical spectra of molecular ions is described. The experimental technique includes the use of three dimensional ion trapping, laser induced fluorescence, and gated photon counting methods. The ions, which are produced by electron impact, are confined in a radio-frequency quadrupole ion trap of cylindrical design. Because the quadrupole ion trap allows mass selection of the molecular ion desired for study, the analysis of the spectra obtained is greatly simplified. The ion trap also confines the ions to a region easily probed by a laser beam. 18 references.

Laser induced fluorescence of trapped molecular ions

International Nuclear Information System (INIS)

Grieman, F.J.

1979-10-01

An experimental apparatus for obtaining the optical spectra of molecular ions is described. The experimental technique includes the use of three dimensional ion trapping, laser induced fluorescence, and gated photon counting methods. The ions, which are produced by electron impact, are confined in a radio-frequency quadrupole ion trap of cylindrical design. Because the quadrupole ion trap allows mass selection of the molecular ion desired for study, the analysis of the spectra obtained is greatly simplified. The ion trap also confines the ions to a region easily probed by a laser beam. 18 references

Picosecond ultrasonics study of the modification of interfacial bonding by ion implantation

International Nuclear Information System (INIS)

Tas, G.; Loomis, J.J.; Maris, H.J.; Bailes, A.A. III; Seiberling, L.E.

1998-01-01

We report on experiments in which picosecond ultrasonic techniques are used to investigate the modification of interfacial bonding that results from ion implantation. The bonding is studied through measurements of the acoustic reflection coefficient at the interface. This method is nondestructive and can be used to create a map of the variation of the bonding over the area of the interface. copyright 1998 American Institute of Physics

Light-induced ion-acoustic instability of rarefied plasma

International Nuclear Information System (INIS)

Krasnov, I.V.; Sizykh, D.V.

1987-01-01

A new method of ion-acoustic instability excitation under the effect of coherent light, resonance to ion quantum transitions on collisionless plasma, is suggested. The light-induced ion-acoustic instability (LIIAI) considered is based on the induced progressive nonequilibrium resonance particles in the field of travelling electromagnetic wave. Principal possibility to use LIIAI in high-resolution spectroscopy and in applied problems of plasma physics, related to its instability, is pointed out

Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence

Energy Technology Data Exchange (ETDEWEB)

Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Kumar, Mahesh [Physics and Energy Harvesting Group, National Physical Laboratory, New Delhi 110012 (India); Nötzel, R. [ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

2014-06-01

We present the surface modification of Si(111) into silicon nitride by exposure to energetic N{sub 2}{sup +} ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N{sub 2}{sup +} ions to form silicon nitride at room temperature (RT) and characterized in-situ by X-ray photoelectron spectroscopy. We have used N{sub 2}{sup +} ion beams in the energy range of 0.2–5.0 keV of different fluence to induce surface reactions, which lead to the formation of Si{sub x}N{sub y} on the Si(111) surface. The XPS core level spectra of Si(2p) and N(1s) have been deconvoluted into different oxidation states to extract qualitative information, while survey scans have been used for quantifying of the silicon nitride formation, valence band spectra show that as the N{sub 2}{sup +} ion fluence increases, there is an increase in the band gap. The secondary electron emission spectra region of photoemission is used to evaluate the change in the work function during the nitridation process. The results show that surface nitridation initially increases rapidly with ion fluence and then saturates. - Highlights: • A systematic study for the formation of silicon nitride on Si(111). • Investigation of optimal energy and fluence for energetic N{sub 2}{sup +} ions. • Silicon nitride formation at room temperature on Si(111)

Heavy-ion induced current through an oxide layer

International Nuclear Information System (INIS)

Takahashi, Yoshihiro; Ohki, Takahiro; Nagasawa, Takaharu; Nakajima, Yasuhito; Kawanabe, Ryu; Ohnishi, Kazunori; Hirao, Toshio; Onoda, Shinobu; Mishima, Kenta; Kawano, Katsuyasu; Itoh, Hisayoshi

2007-01-01

In this paper, the heavy-ion induced current in MOS structure is investigated. We have measured the transient gate current in a MOS capacitor and a MOSFET induced by single heavy-ions, and found that a transient current can be observed when the semiconductor surface is under depletion condition. In the case of MOSFET, a transient gate current with both positive and negative peaks is observed if the ion hits the gate area, and that the total integrated charge is almost zero within 100-200 ns after irradiation. From these results, we conclude that the radiation-induced gate current is dominated by a displacement current. We also discuss the generation mechanism of the radiation-induced current through the oxide layer by device simulation

Surface modification of commercial tin coatings by carbon ion implantation

Energy Technology Data Exchange (ETDEWEB)

Liu, L.J.; Sood, D.K.; Manory, R.R. [Royal Melbourne Inst. of Tech., VIC (Australia)

1993-12-31

Commercial TiN coatings of about 2 {mu}m thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10{sup 17} - 8x10{sup 17} ions cm{sup -2}. Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs.

Surface modification of commercial tin coatings by carbon ion implantation

International Nuclear Information System (INIS)

Liu, L.J.; Sood, D.K.; Manory, R.R.

1993-01-01

Commercial TiN coatings of about 2 μm thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10 17 - 8x10 17 ions cm -2 . Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs

Surface modification of commercial tin coatings by carbon ion implantation

Energy Technology Data Exchange (ETDEWEB)

Liu, L J; Sood, D K; Manory, R R [Royal Melbourne Inst. of Tech., VIC (Australia)

1994-12-31

Commercial TiN coatings of about 2 {mu}m thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10{sup 17} - 8x10{sup 17} ions cm{sup -2}. Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs.

In situ ion-beam analysis and modification of sol-gel zirconia thin films

International Nuclear Information System (INIS)

Levine, T.E.; Mayer, J.W.

1995-01-01

We report the investigation of ion-beam-induced densification of sol-gel zirconia thin films via in situ ion backscattering spectrometry. We have irradiated three regions of a sample with neon, argon, and krypton ions. For each ion species, a series of irradiation and analysis steps were performed using an interconnected 3 MV tandem accelerator. The technique offers the advantages of minimizing the variation of experimental parameters and sequentially monitoring the densification phenomenon with increasing ion dose

Defects induced magnetic transition in Co doped ZnS thin films: Effects of swift heavy ion irradiations

Energy Technology Data Exchange (ETDEWEB)

Patel, Shiv P., E-mail: shivpoojanbhola@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India); Pivin, J.C. [CSNSM, IN2P3-CNRS, Batiment 108, F-91405 Orsay Campus (France); Patel, M.K; Won, Jonghan [Materials Science and Technology Division, MST-8, P.O.Box 1663, Mail Stop G755, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Chandra, Ramesh [Nanoscience Laboratory, IIC, Indian Institute of Technology, Roorkee 247667 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Lokendra [Physics Department, University of Allahabad, Allahabad 211002 (India)

2012-07-15

The effect of swift heavy ions (SHI) on magnetic ordering in ZnS thin films with Co ions substituted on Zn sites is investigated. The materials have been synthesized by pulsed laser deposition on substrates held at 600 Degree-Sign C for obtaining films with wurtzite crystal structure and it showed ferromagnetic ordering up to room temperature with a paramagnetic component. 120 MeV Ag ions have been used at different fluences of 1 Multiplication-Sign 10{sup 11} ions/cm{sup 2} and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2} for SHI induced modifications. The long range correlation between paramagnetic spins on Co ions was destroyed by irradiation and the material became purely paramagnetic. The effect is ascribed to the formation of cylindrical ion tracks due to the thermal spikes resulting from electron-phonon coupling. - Highlights: Black-Right-Pointing-Pointer Effect of swift heavy ions on magnetic ordering in Co doped ZnS thin films are presented. Black-Right-Pointing-Pointer Magnetization in the pristine films is composed of ferromagnetic and paramagnetic components. Black-Right-Pointing-Pointer The films become purely paramagnetic after swift heavy ions irradiation. Black-Right-Pointing-Pointer The magnetic transition is ascribed to the formation of ion track (or cylindrical defects) due to the thermal spikes.

Ion Beam Materials Analysis and Modifications at keV to MeV Energies at the University of North Texas

Science.gov (United States)

Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Lakshantha, Wickramaarachchige J.; Manuel, Jack E.; Bohara, Gyanendra; Szilasi, Szabolcs Z.; Glass, Gary A.; McDaniel, Floyd D.

2014-02-01

The University of North Texas (UNT) Ion Beam Modification and Analysis Laboratory (IBMAL) has four particle accelerators including a National Electrostatics Corporation (NEC) 9SDH-2 3 MV tandem Pelletron, a NEC 9SH 3 MV single-ended Pelletron, and a 200 kV Cockcroft-Walton. A fourth HVEC AK 2.5 MV Van de Graaff accelerator is presently being refurbished as an educational training facility. These accelerators can produce and accelerate almost any ion in the periodic table at energies from a few keV to tens of MeV. They are used to modify materials by ion implantation and to analyze materials by numerous atomic and nuclear physics techniques. The NEC 9SH accelerator was recently installed in the IBMAL and subsequently upgraded with the addition of a capacitive-liner and terminal potential stabilization system to reduce ion energy spread and therefore improve spatial resolution of the probing ion beam to hundreds of nanometers. Research involves materials modification and synthesis by ion implantation for photonic, electronic, and magnetic applications, micro-fabrication by high energy (MeV) ion beam lithography, microanalysis of biomedical and semiconductor materials, development of highenergy ion nanoprobe focusing systems, and educational and outreach activities. An overview of the IBMAL facilities and some of the current research projects are discussed.

Surface modification of M50 steel by dual-ion-beam dynamic mixing

International Nuclear Information System (INIS)

Kuang Yuanzhu; Jan Jun; Qin Ouyang

1994-01-01

TaN films have many attractive characteristics, and so have been used for electronic and mechanical applications. There are many methods used for deposition of TaN films. Recently, the ion-beam dynamic mixing method has been used for thin film deposition and materials modification. In order to obtain high performance, stoichiometric composition and good adhesion we have deposited TaN films by a dual-ion-beam dynamic mixing method. This paper introduces the deposition and properties of TaN films on M50 steel by dual-ion-beam dynamic mixing. The microstructure of films was analysed by X-ray diffraction and Auger electron spectroscopy (AES). The microhardness, resistance to wear and erosion of these films were determined. The results showed that (1) the TaN films were successfully deposited on M50 steel by this method, (2) the performance, resistance to wear and erosion of M50 steel were improved by ion-beam-mixing deposition of the TaN thin films, (3) AES showed there was a mixed layer on the film interface, (4) the microhardness of the thin film depends on microstructure and thickness and (5) the microstructure and quality of the films depends on the deposition conditions, so it is important to select the proper operational parameters of ion sources. ((orig.))

Ion beam-induced topographical and chemical modification on the poly(styrene-co-allyl alcohol) and its effect on the molecular interaction between the modified surface and liquid crystals

International Nuclear Information System (INIS)

Jeong, Hae-Chang; Park, Hong-Gyu; Lee, Ju Hwan; Jang, Sang Bok; Oh, Byeong-Yun; Seo, Dae-Shik

2016-01-01

We demonstrated uniform liquid crystal (LC) alignment on ion beam (IB)-irradiated poly(styrene-co-allyl alcohol) by modifying the chemical bonding on the surface. An IB-irradiated copolymer was used for the alignment layer. We used physico-chemical analysis to determine the IB-irradiated surface modification and LC alignment mechanism on the surface. During IB treatment on poly(styrene-co-allyl alcohol), IB irradiation induces breaking of chemical bonds on the surface to give rise to new bonds with oxygen atoms. This causes a strong Van der Waals interaction between LCs and the modified surface, thereby resulting in uniform LC alignment. The results of contact angle (CA) studies of the copolymer support the chemical bonding changes that were investigated by XPS. We achieved uniform homogeneous LC alignment and obtained stable electro-optical performance by controlling the IB energy. Therefore, the LC cells with IB-irradiated poly(styrene-co-allyl alcohol) exhibited a good potential for alternative alignment of layers in LC applications.

Ion beam-induced topographical and chemical modification on the poly(styrene-co-allyl alcohol) and its effect on the molecular interaction between the modified surface and liquid crystals

Energy Technology Data Exchange (ETDEWEB)

Jeong, Hae-Chang [Information Display Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749 (Korea, Republic of); Park, Hong-Gyu [School of Electrical, Electronic & Control Engineering, Changwon National University, 20 Changwondaehak-ro, Uichang-gu, Changwon-si, Gyeongsangnam-do, 51140 (Korea, Republic of); Lee, Ju Hwan; Jang, Sang Bok [Information Display Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749 (Korea, Republic of); Oh, Byeong-Yun [ZeSHTech Co., Ltd., Business Incubator, Gwangju Institute of Science and Technology, 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 500-712 (Korea, Republic of); Seo, Dae-Shik, E-mail: dsseo@yonsei.ac.kr [Information Display Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749 (Korea, Republic of)

2016-10-01

We demonstrated uniform liquid crystal (LC) alignment on ion beam (IB)-irradiated poly(styrene-co-allyl alcohol) by modifying the chemical bonding on the surface. An IB-irradiated copolymer was used for the alignment layer. We used physico-chemical analysis to determine the IB-irradiated surface modification and LC alignment mechanism on the surface. During IB treatment on poly(styrene-co-allyl alcohol), IB irradiation induces breaking of chemical bonds on the surface to give rise to new bonds with oxygen atoms. This causes a strong Van der Waals interaction between LCs and the modified surface, thereby resulting in uniform LC alignment. The results of contact angle (CA) studies of the copolymer support the chemical bonding changes that were investigated by XPS. We achieved uniform homogeneous LC alignment and obtained stable electro-optical performance by controlling the IB energy. Therefore, the LC cells with IB-irradiated poly(styrene-co-allyl alcohol) exhibited a good potential for alternative alignment of layers in LC applications.

Graphene defects induced by ion beam

Science.gov (United States)

Gawlik, Grzegorz; Ciepielewski, Paweł; Baranowski, Jacek; Jagielski, Jacek

2017-10-01

The CVD graphene deposited on the glass substrate was bombarded by molecular carbon ions C3+ C6+ hydrocarbon ions C3H4+ and atomic ions He+, C+, N+, Ar+, Kr+ Yb+. Size and density of ion induced defects were estimated from evolution of relative intensities of Raman lines D (∼1350 1/cm), G (∼1600 1/cm), and D‧ (∼1620 1/cm) with ion fluence. The efficiency of defect generation by atomic ions depend on ion mass and energy similarly as vacancy generation directly by ion predicted by SRIM simulations. However, efficiency of defect generation in graphene by molecular carbon ions is essentially higher than summarized efficiency of similar group of separate atomic carbon ions of the same energy that each carbon ion in a cluster. The evolution of the D/D‧ ratio of Raman lines intensities with ion fluence was observed. This effect may indicate evolution of defect nature from sp3-like at low fluence to a vacancy-like at high fluence. Observed ion graphene interactions suggest that the molecular ion interacts with graphene as single integrated object and should not be considered as a group of atomic ions with partial energy.

Study of the degradation process of polyimide induced by high energetic ion irradiation

International Nuclear Information System (INIS)

Severin, Daniel

2008-01-01

The dissertation focuses on the radiation hardness of Kapton under extreme radiation environment conditions. To study ion-beam induced modifications, Kapton foils were irradiated at the GSI linear accelerator UNILAC using several projectiles (e.g. Ti, Mo, Au, and U) within a large fluence regime (1 x 10 10 -5 x 10 12 ions/cm 2 ). The irradiated Kapton foils were analysed by means of infrared and UV/Vis spectroscopy, tensile strength measurement, mass loss analysis, and dielectric relaxation spectroscopy. For testing the radiation stability of Kapton at the cryogenic operation temperature (5-10 K) of the superconducting magnets, additional irradiation experiments were performed at the Grand Accelerateur National d' Ions Lourds (GANIL, France) focusing on the online analysis of the outgassing process of small volatile degradation fragments. The investigations of the electrical properties analysed by dielectric relaxation spectroscopy exhibit a different trend: high fluence irradiations with light ions (e.g. Ti) lead to a slight increase of the conductivity, whereas heavy ions (e.g. Sm, Au) cause a drastic change already in the fluence regime of nonoverlapping tracks (5 x 10 10 ions/cm 2 ). Online analysis of the outgassing process during irradiation at cryogenic temperatures shows the release of a variety of small gaseous molecules (e.g. CO, CO 2 , and short hydro carbons). Also a small amount of large polymer fragments is identified. The results allow the following conclusions which are of special interest for the application of Kapton as insulating material in a high-energetic particle radiation environment. a) The material degradation measured with the optical spectroscopy and tensile strength tests are scalable with the dose deposited by the ions. The high correlation of the results allows the prediction of the mechanical degradation with the simple and non-destructive infrared spectroscopy. The degradation curve points to a critical material degradation which

Study of the degradation process of polyimide induced by high energetic ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Severin, Daniel

2008-09-19

The dissertation focuses on the radiation hardness of Kapton under extreme radiation environment conditions. To study ion-beam induced modifications, Kapton foils were irradiated at the GSI linear accelerator UNILAC using several projectiles (e.g. Ti, Mo, Au, and U) within a large fluence regime (1 x 10{sup 10}-5 x 10{sup 12} ions/cm{sup 2}). The irradiated Kapton foils were analysed by means of infrared and UV/Vis spectroscopy, tensile strength measurement, mass loss analysis, and dielectric relaxation spectroscopy. For testing the radiation stability of Kapton at the cryogenic operation temperature (5-10 K) of the superconducting magnets, additional irradiation experiments were performed at the Grand Accelerateur National d' Ions Lourds (GANIL, France) focusing on the online analysis of the outgassing process of small volatile degradation fragments. The investigations of the electrical properties analysed by dielectric relaxation spectroscopy exhibit a different trend: high fluence irradiations with light ions (e.g. Ti) lead to a slight increase of the conductivity, whereas heavy ions (e.g. Sm, Au) cause a drastic change already in the fluence regime of nonoverlapping tracks (5 x 10{sup 10} ions/cm{sup 2}). Online analysis of the outgassing process during irradiation at cryogenic temperatures shows the release of a variety of small gaseous molecules (e.g. CO, CO{sub 2}, and short hydro carbons). Also a small amount of large polymer fragments is identified. The results allow the following conclusions which are of special interest for the application of Kapton as insulating material in a high-energetic particle radiation environment. a) The material degradation measured with the optical spectroscopy and tensile strength tests are scalable with the dose deposited by the ions. The high correlation of the results allows the prediction of the mechanical degradation with the simple and non-destructive infrared spectroscopy. The degradation curve points to a

Ag{sup 7+} ion induced modification of morphology, optical and luminescence behaviour of charge compensated CaMoO{sub 4} nanophosphor

Energy Technology Data Exchange (ETDEWEB)

Dutta, S. [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Department of Chemistry, University of the Free State, Box 339, Bloemfontein 9300 (South Africa); Som, S., E-mail: sudipta.som@gmail.com [Department of Physics, University of the Free State, Box 339, Bloemfontein 9300 (South Africa); Kunti, A.K. [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Sharma, S.K., E-mail: sksharma.ism@gmail.com [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Kumar, Vijay; Swart, H.C. [Department of Physics, University of the Free State, Box 339, Bloemfontein 9300 (South Africa); Visser, H.G., E-mail: visserhg@ufs.ac.za [Department of Chemistry, University of the Free State, Box 339, Bloemfontein 9300 (South Africa)

2016-10-01

Highlights: • CaMoO{sub 4} nanophosphor was synthesized via hydrothermal route. • K{sup +}/Dy{sup 3+} doped CaMoO{sub 4} was irradiated by 100 MeV Ag{sup 7+} ions. • XRD and FESEM results revealed the loss of crystallinity after ion irradiation. • XPS technique confirmed the stability of the oxidation states of the elements. • Change in luminescence with ion was explained via linear energy transfer phenomena. - Abstract: The present paper reports on the swift heavy ion (SHI) induced structural, optical and luminescence properties of CaMoO{sub 4}:Dy{sup 3+}/K{sup +} nanophosphor synthesized via hydrothermal route. Herein 100 MeV Ag{sup 7+} ion beam was used varying fluence from 1 × 10{sup 11} to 1 × 10{sup 13} ions/cm{sup 2}. The depth profile of the Ag{sup 7+} ions was estimated using SRIM code. XRD and FESEM results revealed the loss of crystallinity and reduction in particle size after SHI irradiations. The XPS technique confirmed the stability of oxidation states of the elements. Reflectance spectra exhibited a red shift in the absorption band, followed by a decrease in band gap. Decrease in the intensity of the photoluminescence peaks without any change in band positions was also obtained after ion irradiation. The thermoluminescence (TL) characteristics were discussed in detail, and the trapping parameter was calculated. The results were compared on the grounds of linear energy transfer of the irradiated ions.

Heavy ion induced mutation in arabidopsis

Energy Technology Data Exchange (ETDEWEB)

Tano, Shigemitsu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Heavy ions, He, C, Ar and Ne were irradiated to the seeds of Arabidopsis thaliana for inducing the new mutants. In the irradiated generation (M{sub 1}), germination and survival rate were observed to estimate the relative biological effectiveness in relation to the LET including the inactivation cross section. Mutation frequencies were compared by using three kinds of genetic loci after irradiation with C ions and electrons. Several interesting new mutants were selected in the selfed progenies of heavy ion irradiated seeds. (author)

Swift heavy ion induced modification in polycarbonate membrane for gas separation

International Nuclear Information System (INIS)

Rajesh Kumar; Prasad, Rajendra; Vijay, Y.K.; Das, D.

2003-01-01

Polymeric membranes are extensively used for commercial gas separation applications. Makrofol-KG (polycarbonate) is a glassy polymer. 40 μm thick sheet of Makrofol-KG was irradiated with 40 Ar (14.9 MeV/n) of fluence 10 3 ions/cm 2 and 20 μm thick sheet with 5.3 MeV α-particles of fluence 10 7 ions/cm 2 . The permeability of these polycarbonate membranes for H 2 and CO 2 was measured and also after etching in 6 N NaOH at 60 degC for different periods. Permeability is found to be increased with etching time. At a definite time, critical etching time, the permeability rapidly increases in PC. Positron annihilation lifetimes for unirradiated and irradiated membranes were measured with fast fast coincidence system to study the correlation of free volume hole concentration with gas separation properties. (author)

Specific gene mutations induced by heavy ions

International Nuclear Information System (INIS)

Freeling, M.; Karoly, C.W.; Cheng, D.S.K.

1980-01-01

This report summarizes our heavy-ion research rationale, progress, and plans for the near future. The major project involves selecting a group of maize Adh1 mutants induced by heavy ions and correlating their altered behavior with altered DNA nucleotide sequences and sequence arrangements. This research requires merging the techniques of classical genetics and recombinant DNA technology. Our secondary projects involve (1) the use of the Adh gene in the fruit fly, Drosophila melanogaster, as a second system with which to quantify the sort of specific gene mutants induced by heavy ions as compared to x rays, and (2) the development of a maize Adh1 pollen in situ monitor for environmental mutagens

Temperature dependent surface modification of molybdenum due to low energy He+ ion irradiation

International Nuclear Information System (INIS)

Tripathi, J.K.; Novakowski, T.J.; Joseph, G.; Linke, J.; Hassanein, A.

2015-01-01

In this paper, we report on the temperature dependent surface modifications in molybdenum (Mo) samples due to 100 eV He + ion irradiation in extreme conditions as a potential candidate to plasma-facing components in fusion devices alternative to tungsten. The Mo samples were irradiated at normal incidence, using an ion fluence of 2.6 × 10 24 ions m −2 (with a flux of 7.2 × 10 20 ions m −2 s −1 ). Surface modifications have been studied using high-resolution field emission scanning electron-(SEM) and atomic force (AFM) microscopy. At 773 K target temperature homogeneous evolution of molybdenum nanograins on the entire Mo surface were observed. However, at 823 K target temperature appearance of nano-pores and pin-holes nearby the grain boundaries, and Mo fuzz in patches were observed. The fuzz density increases significantly with target temperatures and continued until 973 K. However, at target temperatures beyond 973 K, counterintuitively, a sequential reduction in the fuzz density has been seen till 1073 K temperatures. At 1173 K and above temperatures, only molybdenum nano structures were observed. Our temperature dependent studies confirm a clear temperature widow, 823–1073 K, for Mo fuzz formation. Ex-situ high resolution X-ray photoelectron spectroscopy studies on Mo fuzzy samples show the evidence of MoO 3 3d doublets. This elucidates that almost all the Mo fuzz were oxidized during open air exposure and are thick enough as well. Likewise the microscopy studies, the optical reflectivity measurements also show a sequential reduction in the reflectivity values (i.e., enhancement in the fuzz density) up to 973 K and after then a sequential enhancement in the reflectivity values (i.e., reduction in the fuzz density) with target temperatures. This is in well agreement with microscopy studies where we observed clear temperature window for Mo fuzz growth

An overview of the facilities, activities, and developments at the University of North Texas Ion Beam Modification and Analysis Laboratory (IBMAL)

Science.gov (United States)

Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Pandey, Bimal; Deoli, Naresh T.; Lakshantha, Wickramaarachchige J.; Mulware, Stephen J.; Baxley, Jacob; Manuel, Jack E.; Pacheco, Jose L.; Szilasi, Szabolcs; Weathers, Duncan L.; Reinert, Tilo; Glass, Gary A.; Duggan, Jerry L.; McDaniel, Floyd D.

2013-07-01

The Ion Beam Modification and Analysis Laboratory (IBMAL) at the University of North Texas includes several accelerator facilities with capabilities of producing a variety of ion beams from tens of keV to several MeV in energy. The four accelerators are used for research, graduate and undergraduate education, and industrial applications. The NEC 3MV Pelletron tandem accelerator has three ion sources for negative ions: He Alphatross and two different SNICS-type sputter ion sources. Presently, the tandem accelerator has four high-energy beam transport lines and one low-energy beam transport line directly taken from the negative ion sources for different research experiments. For the low-energy beam line, the ion energy can be varied from ˜20 to 80 keV for ion implantation/modification of materials. The four post-acceleration beam lines include a heavy-ion nuclear microprobe; multi-purpose PIXE, RBS, ERD, NRA, and broad-beam single-event upset; high-energy ion implantation line; and trace-element accelerator mass spectrometry. The NEC 3MV single-ended Pelletron accelerator has an RF ion source mainly for hydrogen, helium and heavier inert gases. We recently installed a capacitive liner to the terminal potential stabilization system for high terminal voltage stability and high-resolution microprobe analysis. The accelerator serves a beam line for standard RBS and RBS/C. Another beamline for high energy focused ion beam application using a magnetic quadrupole lens system is currently under construction. This beam line will also serve for developmental work on an electrostatic lens system. The third accelerator is a 200 kV Cockcroft-Walton accelerator with an RF ion source. The fourth accelerator is a 2.5 MV Van de Graaff accelerator, which was in operation for last several decades is currently planned to be used mainly for educational purpose. Research projects that will be briefly discussed include materials synthesis/modification for photonic, electronic, and

An overview of the facilities, activities, and developments at the University of North Texas Ion Beam Modification and Analysis Laboratory (IBMAL)

Energy Technology Data Exchange (ETDEWEB)

Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Pandey, Bimal; Deoli, Naresh T.; Lakshantha, Wickramaarachchige J.; Mulware, Stephen J.; Baxley, Jacob; Manuel, Jack E.; Pacheco, Jose L.; Szilasi, Szabolcs; Weathers, Duncan L.; Reinert, Tilo; Glass, Gary A.; Duggan, Jerry L.; McDaniel, Floyd D. [Ion Beam Modification and Analysis Laboratory, University of North Texas, Department of Physics, 1155 Union Circle 311427, Denton, Texas 76203 (United States)

2013-07-03

The Ion Beam Modification and Analysis Laboratory (IBMAL) at the University of North Texas includes several accelerator facilities with capabilities of producing a variety of ion beams from tens of keV to several MeV in energy. The four accelerators are used for research, graduate and undergraduate education, and industrial applications. The NEC 3MV Pelletron tandem accelerator has three ion sources for negative ions: He Alphatross and two different SNICS-type sputter ion sources. Presently, the tandem accelerator has four high-energy beam transport lines and one low-energy beam transport line directly taken from the negative ion sources for different research experiments. For the low-energy beam line, the ion energy can be varied from {approx}20 to 80 keV for ion implantation/modification of materials. The four post-acceleration beam lines include a heavy-ion nuclear microprobe; multi-purpose PIXE, RBS, ERD, NRA, and broad-beam single-event upset; high-energy ion implantation line; and trace-element accelerator mass spectrometry. The NEC 3MV single-ended Pelletron accelerator has an RF ion source mainly for hydrogen, helium and heavier inert gases. We recently installed a capacitive liner to the terminal potential stabilization system for high terminal voltage stability and high-resolution microprobe analysis. The accelerator serves a beam line for standard RBS and RBS/C. Another beamline for high energy focused ion beam application using a magnetic quadrupole lens system is currently under construction. This beam line will also serve for developmental work on an electrostatic lens system. The third accelerator is a 200 kV Cockcroft-Walton accelerator with an RF ion source. The fourth accelerator is a 2.5 MV Van de Graaff accelerator, which was in operation for last several decades is currently planned to be used mainly for educational purpose. Research projects that will be briefly discussed include materials synthesis/modification for photonic, electronic, and

Applications of simultaneous ion backscattering and ion-induced x-ray emission

International Nuclear Information System (INIS)

Musket, R.G.

1983-05-01

Simultaneous ion backscattering and ion-induced x-ray emission (E/sub x/greater than or equal to 300 eV) analyses have been performed using helium ions as probes of the first few hundred nanometers of various materials. These studies serve as a demonstration of the complementary nature of the two types of information obtained. Uncertainties associated with each of the individual techniques were reduced by performing both analyses. The principal advantages of simultaneous analyses over sequential analyses have been delineated

A proposal of a novel DNA modification mechanism induced by irradiation

International Nuclear Information System (INIS)

Oka, Toshitaka

2016-01-01

This article depicts a proposal of a novel DNA modification mechanism induced by irradiation, and is written as an award work from Japanese Society of Radiation Chemistry. The mechanism of DNA modification induced by K-shell photoabsorption of nitrogen and oxygen atoms was investigated by electron paramagnetic resonance and x-ray absorption near edge structure measurements of calf thymus DNA film. The EPR intensities for DNA film were twofold times larger than those estimated based on the photoabsorption cross section. This suggests that the DNA film itself forms unpaired electron species through the excitation of enhanced electron recapturing, known as the postcollision interaction process. (author)

Tailoring magnetism by light-ion irradiation

International Nuclear Information System (INIS)

Fassbender, J; Ravelosona, D; Samson, Y

2004-01-01

Owing to their reduced dimensions, the magnetic properties of ultrathin magnetic films and multilayers, e.g. magnetic anisotropies and exchange coupling, often depend strongly on the surface and interface structure. In addition, chemical composition, crystallinity, grain sizes and their distribution govern the magnetic behaviour. All these structural properties can be modified by light-ion irradiation in an energy range of 5-150 keV due to the energy loss of the ions in the solid along their trajectory. Consequently the magnetic properties can be tailored by ion irradiation. Similar effects can also be observed using Ga + ion irradiation, which is the common ion source in focused ion beam lithography. Examples of ion-induced modifications of magnetic anisotropies and exchange coupling are presented. This review is limited to radiation-induced structural changes giving rise to a modification of magnetic parameters. Ion implantation is discussed only in special cases. Due to the local nature of the interaction, magnetic patterning without affecting the surface topography becomes feasible, which may be of interest in applications. The main patterning technique is homogeneous ion irradiation through masks. Focused ion beam and ion projection lithography are usually only relevant for larger ion masses. The creation of magnetic feature sizes below 50 nm is shown. In contrast to topographic nanostructures the surrounding area of these nanostructures can be left ferromagnetic, leading to new phenomena at their mutual interface. Most of the material systems discussed here are important for technological applications. The main areas are magnetic data storage applications, such as hard magnetic media with a large perpendicular magnetic anisotropy or patterned media with an improved signal to noise ratio and magnetic sensor elements. It will be shown that light-ion irradiation has many advantages in the design of new material properties and in the fabrication technology of

Mutation induced with ion beam irradiation in rose

Energy Technology Data Exchange (ETDEWEB)

Yamaguchi, H. E-mail: yhiroya@nias.affrc.go.jp; Nagatomi, S.; Morishita, T.; Degi, K.; Tanaka, A.; Shikazono, N.; Hase, Y

2003-05-01

The effects of mutation induction by ion beam irradiation on axillary buds in rose were investigated. Axillary buds were irradiated with carbon and helium ion beams, and the solid mutants emerged after irradiation by repeated cutting back. In helium ion irradiation, mutations were observed in plants derived from 9 buds among 56 irradiated buds in 'Orange Rosamini' and in plants derived from 10 buds among 61 irradiated buds in 'Red Minimo'. In carbon ion, mutations were observed in plants derived from 12 buds among 88 irradiated buds in 'Orange Rosamini'. Mutations were induced not only in higher doses but also in lower doses, with which physiological effect by irradiation was hardly observed. Irradiation with both ion beams induced mutants in the number of petals, in flower size, in flower shape and in flower color in each cultivar.

Ion-beam-induced topography and compositional changes in depth profiling

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.

1992-01-01

When energetic ions penetrate and stop in solids they not only add a new atomic constituent to the matrix but they also create atomic recoils and defects. The fluxes of these entities can give rise to spatial redistribution of atomic components, which may be partly or completely balanced by reordering and relaxation processes. These latter, in turn, may be influenced by fields and gradients induced by the primary relocation processes and by the energy deposited. These will include quasi-thermal, concentration (or chemical potential) and electrostatic gradients and may act to enhance or suppress atomic redistribution. Some, or all, of these processes will operate, depending upon the system under study, when energetic ions are employed to sputter erode a substrate for depth sectioning and, quite generally, can perturb the atomic depth profile that it is intended to evaluate. Theoretical and computational approaches to modelling such processes will be outlined and experimental examples shown which illustrate specific phenomena. In particular the accumulation of implant species and defect generation or redistribution can modify, with increasing ion fluence, the local sputtering mechanism and create further problems in depth profile analysis as a changing surface topography penetrates the solid. Examples of such topographic evolution and its influence on depth profiling analysis will be given and models to explain general and specific behaviour will be outlined. The commonality of models which examine both depth-dependent composition modification and surface topography evolution will be stressed. (author)

Development of a collision induced dissociation ion cyclotron resonance spectrometer

International Nuclear Information System (INIS)

Fan, Y.N.

1982-01-01

A transient analysis ion cyclotron resonance spectrometer is developed to investigate the phenomena of collision induced dissociation. The Fourier transform method and the modified maximum entropy spectral analysis or covariance least square method are implemented in measuring the mass spectrum of the ion ensemble. The Fourier transform method can be used in quantitative analysis while the maximum entropy method as developed here is useful for qualitative analysis only. The cyclotron resonance frequency, relaxation time constant, and the relative ion population are observable from the Fourier transform spectrum. These parameters are very important in investigating collision induced dissociation process and other topics in gas phase chemistry. The ion cyclotron resonance spectrometer is not only developed to study fragments and their abundance from a parent ion, but also to determine the threshold energy and reaction cross section in the collision induced dissociation process. When hard sphere model is used in the ion-molecule collision, the radius of acetone ion measured from the reactive cross section is 2.2 angstrom which is very close to the physical dimension of acetone. The threshold energy for acetone ion in collision induced dissociation process is 1.8 eV which is similar to the result obtained by the angle-resolved mass spectrometer

Ion implantation induced martensite nucleation in SUS301 steel

International Nuclear Information System (INIS)

Kinoshita, Hiroshi; Takahashi, Heishichiro; Gustiono, Dwi; Sakaguchi, Norihito; Shibayama, Tamaki; Watanabe, Seiichi

2007-01-01

Phase transformation behaviors of the austenitic 301 stainless steel was studied under Fe + , Ti + and Ar + ions implantation at room temperature with 100, 200 and 300 keV up to fluence of 1x10 21 ions/m 2 and the microstructures were observed by means of transmission electron microscopy (TEM). The plane and cross-sectional observations of the implanted specimen showed that the induced-phases due to implantation from the γ matrix phase were identified as α' martensite phases with the orientation relationship of (11-bar0) α parallel (111-bar) γ and [111] α parallel [011] γ close to the Kurdjumov-Sachs (K-S). The ion implantation induced phases nucleated near the surface region and the depth position of the nucleation changed depending on the ion accelerating energy and ion species. It was also found that the induced marten sites phases nucleate under the influence of the stress distribution, which is introduced due to the concentration of implanted ions, especially due to the stress gradient caused by the corresponding concentration gradient. (author)

Experimental study of ion-induced nucleation by radon decay

International Nuclear Information System (INIS)

He, F.; Hopke, P.K.

1993-01-01

In the environment, the presence of ions from natural radioactivity may increase the rate of new particle formation through ion-induced nucleation. A thermal diffusion cloud chamber (TDCC) has been built to experimentally study ion-induced nucleation where the ions are produced by gaseous radioactive sources. The critical supersaturation values and nucleation rates for methanol, ethanol, 1-propanol, and 1-butanol vapors on ions produced within the volume of the chamber by alpha decay of 222 Rn have been measured quantitatively at various radioactivity concentrations and supersaturations. The presence of ion tracks and the effect of an external electric field were also investigated. The alpha tracks and ion-induced nucleation formed by 222 Rn decay become visible at the critical supersaturation that is below the value needed for homogeneous nucleation. At this supersaturation, the nucleation rates increase substantially with increasing 222 Rn at low activity concentrations, but attain limiting values at higher concentrations. The experimental results indicate that the ionization by radon decay will promote ion-cluster formation and lower the free energy barriers. The formation of visible droplets is strongly dependent on the supersaturation. This study also confirms that the external electric field has a significant effect on the observed rates of nucleation

Nuclear fission induced by heavy ions

International Nuclear Information System (INIS)

Newton, J.O.

1988-09-01

Because the accelerators of the 50's and 60's mostly provided beams of light ions, well suited for studying individual quantum states of low angular momentum or reactions involving the transfer of one or two nucleons, the study of fission, being an example of large-scale collective motion, has until recently been outside of the mainstream of nuclear research. This situation has changed in recent years, due to the new generation of accelerators capable of producing beams of heavy ions with energies high enough to overcome the Coulomb barriers of all stable nuclei. These have made possible the study of new examples of large-scale collective motions, involving major rearrangements of nuclear matter, such as deep-inelastic collisions and heavy-ion fusion. Perhaps the most exciting development in the past few years is the discovery that dissipative effects (nuclear viscosity) play an important role in fission induced by heavy ions, contrary to earlier assumptions that the viscosity involved in fission was very weak and played only a minor role. This review will be mainly concerned with developments in heavy-ion induced fission during the last few years and have an emphasis on the very recent results on dissipative effects. Since heavy-ion bombardment usually results in compound systems with high excitation energies and angular momenta, shell effects might be expected to be small, and the subject of low energy fission, where they are important, will not be addressed. 285 refs., 58 figs

Modification of electrical properties of polymer membranes by ion implantation

International Nuclear Information System (INIS)

Dworecki, K.; Hasegawa, T.; Sudlitz, K.; Wasik, S.

2000-01-01

This paper presents an experimental study of the electrical properties of polymer ion irradiated polyethylene terephthalate (PET) membranes. The polymer samples have been implanted with a variety of ions (O 5+ , N 4+ , Kr 9+ ) by the energy of 10 keV/q up to doses of 10 15 ions/cm 2 and then they were polarized in an electric field of 4.16x10 6 V/m at non-isothermal conditions. The electrical properties and the changes in the chemical structure of implanted membrane were measured by conductivity and discharge currents and FTIR spectra. Electrical conductivity of the membranes PET increases to 1-3 orders of magnitude after implantation and is determined by the charge transport caused by free space charge and by thermal detrapping of charge carriers. The spectra of thermally induced discharge current (TDC) shows that ion irradiated PET membranes are characterized by high ability to accumulate charge

Effect of ion irradiation on the surface, structural and mechanical properties of brass

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Shahbaz; Bashir, Shazia, E-mail: shaziabashir@gcu.edu.pk; Ali, Nisar; Umm-i-Kalsoom,; Yousaf, Daniel; Faizan-ul-Haq,; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

2014-04-01

Highlights: • Brass targets were exposed to carbon ions of energy 2 MeV. • The effect of ion dose has been investigated. • The surface morphology is investigated by SEM analysis. • XRD analysis is performed to reveal structural modification. • Mechanical properties were investigated by tensile testing and microhardness testing. - Abstract: Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 10{sup 12} to 26 × 10{sup 13} ions/cm{sup 2}. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation

Ion induced Auger spectroscopy

International Nuclear Information System (INIS)

Thomas, E.W.; Legg, K.O.; Metz, W.A.

1980-01-01

Auger electron spectra are induced by impact of heavy ions (e.g. Ar + ) on surfaces; it has been suggested that analysis of such spectra would be a useful technique for surface analysis. We have examined the Auger spectra for various projectile-target combinations and present as representative data the spectra for 100 keV Ar + impact on Al, Cr, Mn, Fe and Co. For a projectile incident on a species of higher nuclear charge the spectrum is dominated by Auger lines from the projectile, broadened considerably by the Doppler effect due to the projectile's motion. The spectra are not characteristic of the target and therefore offer no opportunity for surface analysis. For a projectile incident on a target of lower nuclear charge the spectrum is that of the target species but the spectrum is consistent with the source being sputtered excited atoms; the Auger electrons do not come from the surface. We conclude that the ion induced Auger spectra are in general not a convenient method for surface analysis. (orig.)

Molecular analysis of carbon ion-induced mutations in Arabidopsis thaliana

International Nuclear Information System (INIS)

Shikazono, Naoya; Tanaka, Atsushi; Watanabe, Hiroshi; Tano, Shigemitsu; Yokota, Yukihiko

1998-01-01

In order to elucidate the characteristics of the mutations induced by ion particles at the molecular level in plants, mutated loci in carbon ion-induced mutants of Arabidopsis were investigated by PCR and Southern blot analyses. In the present study, two lines of gl1 mutant and two lines of tt4 mutant were isolated after carbon ion-irradiation. Out of four mutants, one had a deletion, other two contained rearrangements, and one had a point-like mutation. From the present result, it was suggested that ion particles induced different kinds of alterations of the DNA and therefore they could produce various types of mutant alleles in plants. (author)

Surface modification of spinel λ-MnO2 and its lithium adsorption properties from spent lithium ion batteries

International Nuclear Information System (INIS)

Li, Li; Qu, Wenjie; Liu, Fang; Zhao, Taolin; Zhang, Xiaoxiao; Chen, Renjie; Wu, Feng

2014-01-01

Highlights: • A method is designed to synthesize a λ-MnO 2 ion-sieve for lithium ions adsorption. • Ultrasonic treatment with acid is highly efficient for lithium ions extraction. • Surface modification by CeO 2 is used to improve the adsorption capacity. • A 0.5 wt.% CeO 2 -coated ion-sieve shows the best adsorption properties. • λ-MnO 2 ion-sieves are promising for recovering scarce lithium resources. - Abstract: Spinel λ-MnO 2 ion-sieves are promising materials because of their high selectivity toward lithium ions, and this can be applied to the recovery of lithium from spent lithium ion batteries. However, manganese dissolution loss during the delithiation of LiMn 2 O 4 causes a decrease in adsorption capacity and poor cycling stability for these ion-sieves. To improve the lithium adsorption properties of λ-MnO 2 ion-sieves, surface modification with a CeO 2 coating was studied using hydrothermal-heterogeneous nucleation. The structure, morphology and composition of the synthesized materials were determined by XRD, SEM, TEM and EDS. The effect of hydrothermal synthesis conditions and the amount of CeO 2 coating on the adsorption performance of λ-MnO 2 were also investigated. A 0.5 wt.% CeO 2 -coated ion-sieve was synthesized by heating at 120 °C for 3 h and it had better adsorption properties than the bare samples. The effect of ultrasonic treatment on the lithium extraction ratio from LiMn 2 O 4 upon acid treatment at various temperatures was studied and the results were compared with conventional mechanical stirring. We found that ultrasonic treatment at lower temperature gave almost the same maximum lithium extraction ratio and was more efficient and economic

Heavy-ion radiation induced bystander effect in mice

Science.gov (United States)

Liang, Shujian; Sun, Yeqing; Zhang, Meng; Wang, Wei; Cui, Changna

2012-07-01

Radiation-induced bystander effect is defined as the induction of damage in neighboring non-hit cells by signals released from directly-irradiated cells. Recently, Low dose of high LET radiation induced bystander effects in vivo have been reported more and more. It has been indicated that radiation induced bystander effect was localized not only in bystander tissues but also in distant organs. Genomic, epigenetic, metabolomics and proteomics play significant roles in regulating heavy-ion radiation stress responses in mice. To identify the molecular mechanism that underlies bystander effects of heavy-ion radiation, the male mice head were exposed to 2000mGy dose of 12C heavy-ion radiation and the distant organ liver was detected on 1h, 6h, 12h and 24h after radiation, respectively. MSAP was used to monitor the level of polymorphic DNA methylation changes. The results show that heavy-ion irradiate mouse head can induce liver DNA methylation changes significantly. The percent of DNA methylation changes are time-dependent and highest at 6h after radiation. We also prove that the hypo-methylation changes on 1h and 6h after irradiation. But the expression level of DNA methyltransferase DNMT3a is not changed. UPLC/Synapt HDMS G2 was employed to detect the proteomics of bystander liver 1h after irradiation. 64 proteins are found significantly different between treatment and control group. GO process show that six of 64 which were unique in irradiation group are associated with apoptosis and DNA damage response. The results suggest that mice head exposed to heavy-ion radiation can induce damage and methylation pattern changed in distant organ liver. Moreover, our findings are important to understand the molecular mechanism of radiation induced bystander effects in vivo.

Swift heavy-ion induced trap generation and mixing at Si/SiO{sub 2} interface in depletion n-MOS

Energy Technology Data Exchange (ETDEWEB)

Shinde, N. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya 464-8603 (Japan) and Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: nss@nucl.nagoya-u.ac.jp; Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)

2006-01-15

Large channel depletion n-channel MOSFET (Metal oxide semiconductor field effect transistor) is a basic Si-SiO{sub 2} structure to understand irradiation-induced modifications. The contribution of interface and oxide states denoted as {delta}N {sub IT} and {delta}N {sub OT}, respectively, was separated out by using I {sub D}-V {sub DS}, I {sub D}-V {sub GS} measurements. The threshold voltage shift {delta}V {sub T} (V {sub T-irrad} - V {sub T-virgin}) increased for all ions (50 MeV Li, B, F, P and Ni) over the fluence of 2 x 10{sup 11}-2 x 10{sup 13} ions/cm{sup 2}. The increase in {delta}N {sub IT} was associated to trap generation at Si-SiO{sub 2} interface, but a small change in {delta}N {sub OT} indicate less charge trapping in oxide. The electronic energy loss S {sub e} induced increase in {delta}N {sub IT} is not adequate to explain the large shift in threshold voltage. A rough estimate shows that the channel width, W should decrease by 40% for a large increase in {delta}N {sub IT}. Thus, the possible factor affecting reduction of W may be ion beam mixing induced broadening of Si-SiO{sub 2} interface.

Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

International Nuclear Information System (INIS)

Rosinski, M.; Badziak, B.; Parys, P.; Wolowski, J.; Pisarek, M.

2009-01-01

The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:∼0.5 J, power density: 10 10 W/cm 2 ) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES

Modification of structure and optical band-gap of nc-Si:H films with ion irradiation

International Nuclear Information System (INIS)

Zhu Yabin; Wang Zhiguang; Sun Jianrong; Yao Cunfeng; Shen Tielong; Li Bingsheng; Wei Kongfang; Pang Lilong; Sheng Yanbin; Cui Minghuan; Li Yuanfei; Wang Ji; Zhu Huiping

2012-01-01

Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 × 10 13 , 5.0 × 10 13 and 1.0 × 10 14 Xe-ions/cm 2 . The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV–Vis–NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 × 10 14 Xe-ions/cm 2 decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed.

Surface-defect induced modifications in the optical properties of α-MnO_2 nanorods

International Nuclear Information System (INIS)

John, Reenu Elizabeth; Chandran, Anoop; Thomas, Marykutty; Jose, Joshy; George, K.C.

2016-01-01

Graphical abstract: - Highlights: • Alpha-MnO_2 nanorods are prepared by chemical method. • Difference in surface defect density is achieved. • Characterized using XRD, Rietveld, XPS, EDS, HR-TEM, BET, UV–vis absorption spectroscopy and PL spectroscopy. • Explains the bandstructure modification due to Jahn–Teller distortions using crystal field theory. • Modification in the intensity of optical emissions related to defect levels validates the concept of surface defect induced tuning of optical properties. - Abstract: The science of defect engineering via surface tuning opens a new route to modify the inherent properties of nanomaterials for advanced functional and practical applications. In this work, two independent synthesis methods (hydrothermal and co-precipitation) are adopted to fabricate α-MnO_2 nanorods with different defect structures so as to understand the effect of surface modifications on their optical properties. The crystal structure and morphology of samples are investigated with the aid of X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Atomic composition calculated from energy dispersive spectroscopy (EDS) confirms non-stoichiometry of the samples. The surface properties and chemical environment are thoroughly studied using X-ray photoelectron spectroscopy (XPS) and Brunauer–Emmett–Teller (BET) analysis. Bond angle variance and bond valence sum are determined to validate distortions in the basic MnO_6 octahedron. The surface studies indicate that the concentration of Jahn–Teller manganese (III) (Mn"3"+) ion in the samples differ from each other which results in their distinct properties. Band structure modifications due to Jahn–Teller distortion are examined with the aid of ultraviolet–visible (UV) reflectance and photoluminescence (PL) studies. The dual peaks obtained in derivative spectrum conflict the current concept on the bandgap energy of MnO_2. These studies suggest that

Effect of ion irradiation on the surface, structural and mechanical properties of brass

Science.gov (United States)

Ahmad, Shahbaz; Bashir, Shazia; Ali, Nisar; Umm-i-Kalsoom; Yousaf, Daniel; Faizan-ul-Haq; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

2014-04-01

Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 1012 to 26 × 1013 ions/cm2. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation, augmentation, recombination and annihilation of the ion-induced defects.

Strong dopant dependence of electric transport in ion-gated MoS2

NARCIS (Netherlands)

Piatti, Erik; Chen, Qihong; Ye, Jianting

2017-01-01

We report modifications of the temperature-dependent transport properties of MoS2 thin flakes via field-driven ion intercalation in an electric double layer transistor. We find that intercalation with Li+ ions induces the onset of an inhomogeneous superconducting state. Intercalation with K+ leads

The role of ion-induced aerosol formation in the lower atmosphere

International Nuclear Information System (INIS)

Raes, Frank; Janssens, Augustin; Dingenen, Rita van

1986-01-01

The rate of ion-induced aerosol formation in a H 2 0-H 2 S0 4 mixture depends on the relative humidity, the relative acidity and the number of ions (clusters) available for nucleation. Figure 1 shows the rates of homogeneous and ion-induced aerosol formation as a function of the H 2 S0 4 sup((gas)) concentration, for conditions prevailing in the lower atmosphere. The rate of ion-induced aerosol formation is plotted for different concentrations of pre-existing aerosol. It can be seen that ion-induced aerosol formation will only play a role in the formation of new particles when (1) the H 2 S0 4 sup((gas)) concentration is confined within the critical values for ion-induced and homogeneous aerosol formation (about 5 x 10 7 and 4 x 10 8 cm -3 respectively), and (2) the concentration of pre-existing aerosol is lower than about 5 x 10 3 cm -3 (Dp = 0.1 μm). It will be shown by numerical calculations that such conditions may be expected above the oceans. (author)

Modification of electrical properties of polymer membranes by ion implantation (II)

International Nuclear Information System (INIS)

Dworecki, K.; Hasegawa, T.; Sudlitz, K.; Slezak, A.; Wasik, S.

2001-01-01

In the present work we report on the results of an experimental study of the electrical properties of polymer ion irradiated polyethylene terephthalate (PET) membranes. The polymer samples have been implanted under vacuum at room temperature with a variety of ions (C 4+ , O 6+ , S 7+ ) at energy of 10 keV/q up to the dose of 10 15 ions/cm 2 and then they were polarized in an electric field of 4.16x10 6 V/m at non-isothermal conditions. The electrical properties and changes in chemical structure of ion implanted membranes were studied by the conductivity and discharge currents measurements, FTIR spectra and differential thermal analysis. The electrical conductivity of the PET membranes is determined by the charge transport caused by free space charge and by thermal releasing of charge carriers. The spectra of thermally induced discharge current (TDC) shows that ion irradiated PET membranes are characterized by high ability of charge accumulation

Effect of radical species density and ion bombardment during ashing of extreme ultralow-κ interlevel dielectric materials

International Nuclear Information System (INIS)

Worsley, M. A.; Bent, S. F.; Fuller, N. C. M.; Tai, T. L.; Doyle, J.; Rothwell, M.; Dalton, T.

2007-01-01

The significance of ion impact and radical species density on ash-induced modification of an extreme ultralow-κ interlevel dielectric (ILD) material (κ 2 and Ar/N 2 dual frequency capacitive discharges is determined by combining plasma diagnostics, modeling of the ion angular distribution function, and material characterization such as angle resolved x-ray photoelectron spectroscopy. Radical species density was determined by optical emission actinometry under the same conditions and in the same reactor in a previous study by the present authors. ILD modification is observed and correlated with changes in the plasma for a range of pressures (5-60 mTorr), bias powers (0-350 W), and percent Ar in the source gas (0%, 85%). For the Ar/O 2 discharge, extensive modification of the ILD sidewall was observed for significant ion scattering conditions, whereas minimal modification of the ILD sidewall was observed under conditions of minimal or no ion scattering. Further, for an identical increase in the O-radical density (∼ an order of magnitude), a different degree of modification was induced at the ILD trench bottom surface depending on whether pressure or percent Ar was used to increase the radical density. The different degrees of modification seemingly correlated with the relative changes in the ion current for increasing pressure or percent Ar. For the Ar/N 2 discharge, reduced damage of the ILD sidewall and trench bottom surfaces was observed for increasing pressure (increasing N-radical density) and decreasing ion current to both surfaces. It is, thus, proposed that the mechanism for modification of the porous ILD is dominated by the creation of reactive sites by ion impact under the present conditions. A detailed discussion of the results which support this proposal is presented

b-jet tagged nuclear modification factors in heavy ion collisions with CMS

CERN Document Server

Jung, Kurt

2014-01-01

The energy loss of jets in heavy-ion collisions is expected to depend on the flavor of the fragmenting parton. Thus, measurements of jet quenching as a function of flavor place powerful constraints on the thermodynamical and transport properties of the hot and dense medium. Measurements of the nuclear modification factors of the heavy-flavor-tagged jets in both PbPb and pPb collisions can quantify such energy loss effects. Specifically, pPb measurements provide crucial insights into the behavior of the cold nuclear matter effect, which is required to fully understand the hot and dense medium effects on jets in PbPb collisions. In this talk, we present the b-jet spectra and the first measurement of the nuclear modification factors as a function of transverse momentum and pseudorapidity, using the high statistics pp, pPb and PbPb data taken in 2011 and 2013.

Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

Energy Technology Data Exchange (ETDEWEB)

Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wongkham, W. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Inthanon, K. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Anuntalabhochai, S. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2013-06-15

Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

International Nuclear Information System (INIS)

Yu, L.D.; Wongkham, W.; Prakrajang, K.; Sangwijit, K.; Inthanon, K.; Thongkumkoon, P.; Wanichapichart, P.; Anuntalabhochai, S.

2013-01-01

Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

Nonelastic nuclear reactions induced by light ions with the BRIEFF code

CERN Document Server

Duarte, H

2010-01-01

The intranuclear cascade (INC) code BRIC has been extended to compute nonelastic reactions induced by light ions on target nuclei. In our approach the nucleons of the incident light ion move freely inside the mean potential of the ion in its center-of-mass frame while the center-of-mass of the ion obeys to equations of motion dependant on the mean nuclear+Coulomb potential of the target nucleus. After transformation of the positions and momenta of the nucleons of the ion into the target nucleus frame, the collision term between the nucleons of the target and of the ion is computed taking into account the partial or total breakup of the ion. For reactions induced by low binding energy systems like deuteron, the Coulomb breakup of the ion at the surface of the target nucleus is an important feature. Preliminary results of nucleon production in light ion induced reactions are presented and discussed.

Boron ion irradiation induced structural and surface modification of glassy carbon

International Nuclear Information System (INIS)

Kalijadis, Ana; Jovanović, Zoran; Cvijović-Alagić, Ivana; Laušević, Zoran

2013-01-01

The incorporation of boron into glassy carbon was achieved by irradiating two different types of targets: glassy carbon polymer precursor and carbonized glassy carbon. Targets were irradiated with a 45 keV B 3+ ion beam in the fluence range of 5 × 10 15 –5 × 10 16 ions cm −2 . For both types of targets, the implanted boron was located in a narrow region under the surface. Following irradiation, the polymer was carbonized under the same condition as the glassy carbon samples (at 1273 K) and examined by Raman spectroscopy, temperature programmed desorption, hardness and cyclic voltammetry measurements. Structural analysis showed that during the carbonization process of the irradiated polymers, boron is substitutionally incorporated into the glassy carbon structure, while for irradiated carbonized glassy carbon samples, boron irradiation caused an increase of the sp 3 carbon fraction, which is most pronounced for the highest fluence irradiation. Further analyses showed that different nature of boron incorporation, and thus changed structural parameters, are crucial for obtaining glassy carbon samples with modified mechanical, chemical and electrochemical properties over a wide range

Alteration of human serum albumin binding properties induced by modifications: A review

Science.gov (United States)

Maciążek-Jurczyk, Małgorzata; Szkudlarek, Agnieszka; Chudzik, Mariola; Pożycka, Jadwiga; Sułkowska, Anna

2018-01-01

Albumin, a major transporting protein in the blood, is the main target of modification that affects the binding of drugs to Sudlow's site I and II. These modification of serum protein moderates its physiological function, and works as a biomarker of some diseases. The main goal of the paper was to explain the possible alteration of human serum albumin binding properties induced by modifications such as glycation, oxidation and ageing, their origin, methods of evaluation and positive and negative meaning described by significant researchers.

Fundamental Studies of Irradiation-Induced Modifications in Microstructural Evolution and Mechanical Properties of Advanced Alloys

Energy Technology Data Exchange (ETDEWEB)

Stubbins, James; Heuser, Brent; Hosemann, Peter; Liu, Xiang

2018-04-24

This final technical report summarizes the research performed during October 2014 and December 2017, with a focus on investigating the radiation-induced microstructural and mechanical property modifications in optimized advanced alloys for sodium-cooled fast reactor (SFR) structural applications. To accomplish these objectives, the radiation responses of several different advanced alloys, including austenitic steel Alloy 709 (A709) and 316H, and ferritic/ martensitic Fe–9Cr steels T91 and G92, were investigated using a combination of microstructure characterizations and nanoindentation measurements. Different types of irradiation, including ex situ bulk ion irradiation and in situ transmission electron microscopy (TEM) ion irradiation, were employed in this study. Radiation-induced dislocations, precipitates, and voids were characterized by TEM. Scanning transmission electron microscopy with energy dispersive X-ray spectroscopy (STEM-EDS) and/or atom probe tomography (APT) were used to study radiation-induced segregation and precipitation. Nanoindentation was used for hardness measurements to study irradiation hardening. Austenitic A709 and 316H was bulk-irradiated by 3.5 MeV Fe++ ions to up to 150 peak dpa at 400, 500, and 600°. Compared to neutron-irradiated stainless steel (SS) 316, the Frank loop density of ion-irradiated A709 shows similar dose dependence at 400°, but very different temperature dependence. Due to the noticeable difference in the initial microstructure of A709 and 316H, no systematic comparison on the Frank loops in A709 vs 316H was made. It would be helpful that future ion irradiation study on 316 stainless steel could be conducted to directly compare the temperature dependence of Frank loop density in ion-irradiated 316 SS with that in neutron-irradiated 316 SS. In addition, future neutron irradiation on A709 at 400–600° at relative high dose (>10 dpa) can be carried out to compare with ion-irradiated A709. The radiation-induced

Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

Energy Technology Data Exchange (ETDEWEB)

Yu, L.D., E-mail: yuld@thep-center.org [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Phanchaisri, B. [Institute of Science and Technology Research, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Singkarat, S. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2014-05-01

Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence.

Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

International Nuclear Information System (INIS)

Yu, L.D.; Sangwijit, K.; Prakrajang, K.; Phanchaisri, B.; Thongkumkoon, P.; Thopan, P.; Singkarat, S.; Anuntalabhochai, S.

2014-01-01

Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

Science.gov (United States)

Jadhav, Vidya

2015-09-01

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0> orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 1017 cm-3 were irradiated at 100 MeV Fe7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 1010-1 × 1014 ions cm-2. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet-visible-NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 1013, 5 × 1013 and 1 × 1014 ions cm-2, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 1013 ion cm-2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E1, E1 + Δ and E2 band gaps in all irradiated samples.

Covalent modifications of the amyloid beta peptide by hydroxynonenal: Effects on metal ion binding by monomers and insights into the fibril topology.

Science.gov (United States)

Grasso, G; Komatsu, H; Axelsen, P H

2017-09-01

Amyloid β peptides (Aβ) and metal ions are associated with oxidative stress in Alzheimer's disease (AD). Oxidative stress, acting on ω-6 polyunsaturated fatty acyl chains, produces diverse products, including 4-hydroxy-2-nonenal (HNE), which can covalently modify the Aβ that helped to produce it. To examine possible feedback mechanisms involving Aβ, metal ions and HNE production, the effects of HNE modification and fibril formation on metal ion binding was investigated. Results indicate that copper(II) generally inhibits the modification of His side chains in Aβ by HNE, but that once modified, copper(II) still binds to Aβ with high affinity. Fibril formation protects only one of the three His residues in Aβ from HNE modification, and this protection is consistent with proposed models of fibril structure. These results provide insight into a network of biochemical reactions that may be operating as a consequence of oxidative stress in AD, or as part of the pathogenic process. Copyright © 2016. Published by Elsevier Inc.

Modification of thin-layer systems by swift heavy ions

International Nuclear Information System (INIS)

Bolse, W.; Schattat, B.; Feyh, A.

2003-01-01

The electronic energy loss of swift heavy ions (MeV/amu) within a solid results in a highly excited cylindrical zone of some nm in diameter, within which all atoms may be in motion for some tens of ps (transient local melting). After cooling down, a defect-rich or even amorphous latent track is left in many cases, especially in insulating materials. The resulting property alterations (density, micro-structure, morphology, phase composition, etc.) have been investigated for many bulk materials, while only very few experiments have been carried out with thin-film systems. In the present paper, a summary will be given of our studies on the transport of matter in thin-film packages induced by irradiation with high-energy ions. These is, on the one hand, atomic mixing at the interfaces, which is especially pronounced in ceramic systems and which seems to occur by interdiffusion in the molten ion track. On the other hand, we have discovered a self-organisation phenomenon in swift-heavy-ion-irradiated NiO layers, which at low fluences first showed periodic cracking perpendicular to the projected beam direction. After application of high fluences, the NiO layer was reorganised in 100-nm-thick and 1-μm-high NiO lamellae of the same separation distance (1-3 μm) and orientation as found for the cracks. Both effects can be attributed to transient melting of the material surrounding the ion trajectory. (orig.)

Specificity of mutations induced by carbon ions in budding yeast Saccharomyces cerevisiae

International Nuclear Information System (INIS)

Matuo, Youichirou; Nishijima, Shigehiro; Hase, Yoshihiro; Sakamoto, Ayako; Tanaka, Atsushi; Shimizu, Kikuo

2006-01-01

To investigate the nature of mutations induced by accelerated ions in eukaryotic cells, the effects of carbon-ion irradiation were compared with those of γ-ray irradiation in the budding yeast Saccharomyces cerevisiae. The mutational effect and specificity of carbon-ion beams were studied in the URA3 gene of the yeast. Our experiments showed that the carbon ions generated more than 10 times the number of mutations induced by γ-rays, and that the types of base changes induced by carbon ions include transversions (68.7%), transitions (13.7%) and deletions/insertions (17.6%). The transversions were mainly G:C → T:A, and all the transitions were G:C → A:T. In comparison with the surrounding sequence context of mutational base sites, the C residues in the 5'-AC(A/T)-3' sequence were found to be easily changed. Large deletions and duplications were not observed, whereas ion-induced mutations in Arabidopsis thaliana were mainly short deletions and rearrangements. The remarkable feature of yeast mutations induced by carbon ions was that the mutation sites were localized near the linker regions of nucleosomes, whereas mutations induced by γ-ray irradiation were located uniformly throughout the gene

Cell Adhesion Selectivity of Stent Material to improve Bio-functionality by Ion Beam Modification

Energy Technology Data Exchange (ETDEWEB)

Lee, Jaesang; Park, JUngchan; Jung, Myunghwan; Kim, Yongki [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Park, Junkyu [Bio alpha., Co. Ltd., Gimhae (Korea, Republic of)

2014-05-15

In this study, ion implantation into collagen coated Co-Cr alloy, which is a cheaper material of the artificial stent product comparing with Ti alloy, has been studied to develop small diameter artificial stent by the cell adhesion control. The size of stent was 1.6mm of the diameter and 18mm of the length. The life-time of artificial stent depends on adhesion property of endothelial-cells. We successfully controlled cell adhesion selectivity between endothelial cell and muscle cell by using collagen coated and He{sup +} ion beam irradiated Co-Cr-alloy to apply to artificial stent. But, we did not achieve the inhibition of platelet adhesion, yet by using collagen coating and He{sup +} ion beam irradiation. Based on this study, we have plan to research about separation between collagen coating effect and ion beam effect. Also, we will have more detail analysis of the mechanism of cell attachment. In recent years, ion implantation has been applied to the surface modification of prosthesis to improve blood compatibility and tissue compatibility in field of biomedical application. As well known, bio compatibility was concerned with the cell adhesion selectivity for bio-functionality. The biomedical application of ion beam technology would be used more widely in the future such as catheter and artificial graft.

Cell Adhesion Selectivity of Stent Material to improve Bio-functionality by Ion Beam Modification

International Nuclear Information System (INIS)

Lee, Jaesang; Park, JUngchan; Jung, Myunghwan; Kim, Yongki; Park, Junkyu

2014-01-01

In this study, ion implantation into collagen coated Co-Cr alloy, which is a cheaper material of the artificial stent product comparing with Ti alloy, has been studied to develop small diameter artificial stent by the cell adhesion control. The size of stent was 1.6mm of the diameter and 18mm of the length. The life-time of artificial stent depends on adhesion property of endothelial-cells. We successfully controlled cell adhesion selectivity between endothelial cell and muscle cell by using collagen coated and He + ion beam irradiated Co-Cr-alloy to apply to artificial stent. But, we did not achieve the inhibition of platelet adhesion, yet by using collagen coating and He + ion beam irradiation. Based on this study, we have plan to research about separation between collagen coating effect and ion beam effect. Also, we will have more detail analysis of the mechanism of cell attachment. In recent years, ion implantation has been applied to the surface modification of prosthesis to improve blood compatibility and tissue compatibility in field of biomedical application. As well known, bio compatibility was concerned with the cell adhesion selectivity for bio-functionality. The biomedical application of ion beam technology would be used more widely in the future such as catheter and artificial graft

Advanced ion beam analysis of materials using ion-induced fast electron

Energy Technology Data Exchange (ETDEWEB)

Kudo, Hiroshi; Tanabe, Atsushi; Ishihara, Toyoyuki [Tsukuba Univ., Ibaraki (Japan); and others

1997-03-01

Recent progress in the study of high-energy shadowing effect using ion-induced electron spectroscopy is reported with emphasis on a possibility of determination of local electronic structure in solids, which has been a difficult problem to approach with other experimental techniques. We demonstrate real-space determination of covalent-bond electron distribution in Si crystal. The analysis technique may provide a new field of ion beam analysis of solids. (author)

Modification of oxide films by ion implantation: TiO2-films modified by Ti+ and O+ as example

International Nuclear Information System (INIS)

Schultze, J.W.; Elfenthal, L.; Leitner, K.; Meyer, O.

1988-01-01

Oxide films can be modified by ion implantation. Changes in the electrochemical properties of the films are due to the deposition profile of the implanted ion, ie doping and stoichiometric changes, as well as to the radiation damage. The latter is due to the formation of Frenkel defects and at high concentrations to a complete amorphization of the oxide film. TiOsub(x)-films with 1 + - and O + -ions into anodic oxide films on titanium. The electrode capacity shows always the behaviour of an n-type semiconductor with an almost constant flatband potential but a strong maximum donor concentration at about 3% Ti + concentration. Oxygen implantation, on the other hand, causes a small increase of donor concentration only at high concentration of O + . Electron transfer reactions show strong modifications of the electronic behaviour of the oxide film with a maximum again at 3% titanium. Photocurrent spectra prove the increasing amorphization and show interband states 2.6 eV above the VB or below the CB. During repassivation measurements at various potentials different defects formed by Ti + - and O + -implantation become mobile. A tentative model of the band structure is constructed which takes into account the interband states due to localised Ti + - and O + -ions. The modification of ion implanted oxide films is compared with the effects of other preparation techniques. (author)

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

Energy Technology Data Exchange (ETDEWEB)

Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Thopan, P.; Yaopromsiri, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation.

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

International Nuclear Information System (INIS)

Thongkumkoon, P.; Prakrajang, K.; Thopan, P.; Yaopromsiri, C.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation

Large modification in insulator-metal transition of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001) by high energy ion irradiation in biased reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Azhan, Nurul Hanis; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Ohtsubo, Yoshiyuki; Kimura, Shin-ichi [Graduate School of Frontier Biosciences, Osaka University, Suita 565-0871 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)

2016-02-07

High energy ion irradiation in biased reactive sputtering enabled significant modification of insulator-metal transition (IMT) properties of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001). Even at a high biasing voltage with mean ion energy of around 325 eV induced by the rf substrate biasing power of 40 W, VO{sub 2} film revealed low IMT temperature (T{sub IMT}) at 309 K (36 °C) together with nearly two orders magnitude of resistance change. Raman measurements from −193 °C evidenced that the monoclinic VO{sub 2} lattice begins to transform to rutile-tetragonal lattice near room temperature. Raman spectra showed the in-plane compressive stress in biased VO{sub 2} films, which results in shortening of V–V distance along a-axis of monoclinic structure, a{sub M}-axis (c{sub R}-axis) and thus lowering the T{sub IMT}. In respect to that matter, significant effects in shortening the in-plane axis were observed through transmission electron microscopy observations. V2p{sub 3/2} spectra from XPS measurements suggested that high energy ion irradiation also induced oxygen vacancies and resulted for an early transition onset and rather broader transition properties. Earlier band gap closing against the temperature in VO{sub 2} film with higher biasing power was also probed by ultraviolet photoelectron spectroscopy. Present results with significant modification of IMT behavior of films deposited at high-energy ion irradiation with T{sub IMT} near the room temperature could be a newly and effective approach to both exploring mechanisms of IMT and further applications of this material, due to the fixed deposition conditions and rather thicker VO{sub 2} films.

Modifications of the hydriding kinetics of a metallic surface, using ion implantation

International Nuclear Information System (INIS)

Crusset, D.

1992-10-01

Uranium reacts with hydrogen to form an hydride: this reaction leads to the total destruction of the material. To modify the reactivity of an uranium surface towards hydrogen, ion implantation was selected, among surface treatments techniques. Four elements (carbon, nitrogen, oxygen, sulfur) were implanted to different doses. The results show a modification of the hydriding mechanism and a significant increase in the reaction induction times, notably at high implantation doses. Several techniques (SIMS, X-rays phases analysis and residual stresses determination) were used to characterize the samples and understand the different mechanisms involved

Folding two dimensional crystals by swift heavy ion irradiation

International Nuclear Information System (INIS)

Ochedowski, Oliver; Bukowska, Hanna; Freire Soler, Victor M.; Brökers, Lara; Ban-d'Etat, Brigitte; Lebius, Henning; Schleberger, Marika

2014-01-01

Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS 2 and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS 2 does not

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

International Nuclear Information System (INIS)

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

2013-01-01

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport

Modification of SRIM-calculated dose and injected ion profiles due to sputtering, injected ion buildup and void swelling

Energy Technology Data Exchange (ETDEWEB)

Wang, Jing, E-mail: jing.wang@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99354 (United States); Texas A& M University, College Station, TX 77843 (United States); Toloczko, Mychailo B. [Pacific Northwest National Laboratory, Richland, WA 99354 (United States); Bailey, Nathan [University of California, Berkeley, CA 94720 (United States); Garner, Frank A.; Gigax, Jonathan; Shao, Lin [Texas A& M University, College Station, TX 77843 (United States)

2016-11-15

In radiation effects on materials utilizing self-ion irradiations, it is necessary to calculate the local displacement damage level and ion injection profile because of the short distance that self-ions travel in a material and because of the strong variation of displacement rate with depth in a specimen. The most frequently used tool for this is the software package called Stopping and Range of Ions in Matter (SRIM). A SRIM-calculated depth-dependent dose level is usually determined under the implicit assumption that the target does not undergo any significant changes in volume during the process, in particular SRIM ignores the effect of sputtering, injected ions, and void swelling on the redistribution of the dose and injected ion profiles. This approach become increasingly invalid as the ion fluence reaches ever higher levels, especially for low energy ion irradiations. The original surface is not maintained due to sputter-induced erosion, while within the irradiated region of the specimen, injected ions are adding material, and if void swelling is occurring, it is creating empty space. An iterative mathematical treatment of SRIM outputs to produce corrected dose and injected ion profiles based on these phenomenon and without regard to diffusion is presented along with examples of differences between SRIM-calculated values and corrected values over a range of typical ion energies. The intent is to provide the reader with a convenient tool for more accurately calculating dose and injected ion profiles for heavy-ion irradiations.

Ion-beam-induced reactions in metal-thin-film-/BP system

International Nuclear Information System (INIS)

Kobayashi, N.; Kumashiro, Y.; Revesz, P.; Mayer, J.W.

1989-01-01

Ion-beam-induced reactions in Ni thin films on BP(100) have been investigated and compared with the results of the thermal reaction. The full reaction of Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 200degC and the formation of the crystalline phase corresponding to a composition of Ni 4 BP was observed. Amorphous layer with the same composition was formed by the bombardments below RT. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350degC and 400degC and full reaction was observed at 450degC. Metal-rich ternary phase or mixed binary phase is thought to be the first crystalline phase formed both in the ion-beam-induced and in the thermally induced reactions. The crystalline phase has the same composition and X-ray diffraction pattern both for ion-beam-induced and thermal reactions. Linear dependence of the reacted thickness on the ion fluence was also observed. The authors would like to express their sincere gratitude to Jian Li and Shi-Qing Wang for X-ray diffraction measurements at Cornell University. One of the authors (N.K.) acknowledge the Agency of Science and Technology of Japan for the financial support of his stay at Cornell. We also acknowledge Dr. H. Tanoue at ETL for his help in ion bombardment experiments. (author)

L X-ray emission induced by heavy ions

Energy Technology Data Exchange (ETDEWEB)

Pajek, M. [Institute of Physics, Jan Kochanowski University, 25-406 Kielce (Poland); Banaś, D., E-mail: d.banas@ujk.edu.pl [Institute of Physics, Jan Kochanowski University, 25-406 Kielce (Poland); Braziewicz, J.; Majewska, U.; Semaniak, J. [Institute of Physics, Jan Kochanowski University, 25-406 Kielce (Poland); Fijał-Kirejczyk, I. [The Institute of Atomic Energy, 05-400 Otwock-Świerk (Poland); Jaskóła, M.; Czarnacki, W.; Korman, A. [The National Centre for Nuclear Research, 05-400 Otwock-Świerk (Poland); Kretschmer, W. [Physikalisches Institut, Universität Erlangen-Nürnberg, D-91058 Erlangen (Germany); Mukoyama, T. [Institute for Nuclear Research, Hungarian Academy of Sciences (ATOMKI), H-4026 Debrecen (Hungary); Trautmann, D. [Institut für Physik, Universität Basel, Basel (Switzerland)

2015-11-15

Particle-induced X-ray emission (PIXE) technique is usually applied using typically 1 MeV to 3 MeV protons or helium ions, for which the ion-atom interaction is dominated by the single ionization process. For heavier ions the multiple ionization plays an increasingly important role and this process can influence substantially both the X-ray spectra and atomic decay rates. Additionally, the subshell coupling effects are important for the L- and M-shells ionized by heavy ions. Here we discuss the main features of the X-ray emission induced by heavy ions which are important for PIXE applications, namely, the effects of X-ray line shifts and broadening, vacancy rearrangement and change of the fluorescence and Coster–Kronig yields in multiple ionized atoms. These effects are illustrated here by the results of the measurements of L X-ray emission from heavy atoms bombarded by 6 MeV to 36 MeV Si ions, which were reported earlier. The strong L-subshell coupling effects are observed, in particular L{sub 2}-subshell, which can be accounted for within the coupling subshell model (CSM) developed within the semiclassical approximation. Finally, the prospects to use heavy ions in PIXE analysis are discussed.

Specificity of mutations induced by carbon ions in budding yeast Saccharomyces cerevisiae

Energy Technology Data Exchange (ETDEWEB)

Matuo, Youichirou [Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871 (Japan); Nishijima, Shigehiro [Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871 (Japan); Hase, Yoshihiro [Radiation-Applied Biology Division, Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), Watanuki-machi 1233, Takasaki, Gunma 370-1292 (Japan); Sakamoto, Ayako [Radiation-Applied Biology Division, Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), Watanuki-machi 1233, Takasaki, Gunma 370-1292 (Japan); Tanaka, Atsushi [Radiation-Applied Biology Division, Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), Watanuki-machi 1233, Takasaki, Gunma 370-1292 (Japan); Shimizu, Kikuo [Radioisotope Research Center, Osaka University, Yamada-oka 2-4, Suita, Osaka 565-0871 (Japan)]. E-mail: shimizu@rirc.osaka-u.ac.jp

2006-12-01

To investigate the nature of mutations induced by accelerated ions in eukaryotic cells, the effects of carbon-ion irradiation were compared with those of {gamma}-ray irradiation in the budding yeast Saccharomyces cerevisiae. The mutational effect and specificity of carbon-ion beams were studied in the URA3 gene of the yeast. Our experiments showed that the carbon ions generated more than 10 times the number of mutations induced by {gamma}-rays, and that the types of base changes induced by carbon ions include transversions (68.7%), transitions (13.7%) and deletions/insertions (17.6%). The transversions were mainly G:C {sup {yields}} T:A, and all the transitions were G:C {sup {yields}} A:T. In comparison with the surrounding sequence context of mutational base sites, the C residues in the 5'-AC(A/T)-3' sequence were found to be easily changed. Large deletions and duplications were not observed, whereas ion-induced mutations in Arabidopsis thaliana were mainly short deletions and rearrangements. The remarkable feature of yeast mutations induced by carbon ions was that the mutation sites were localized near the linker regions of nucleosomes, whereas mutations induced by {gamma}-ray irradiation were located uniformly throughout the gene.

Highly charged ion impact induced nanodefects in diamond

Energy Technology Data Exchange (ETDEWEB)

Makgato, T.N., E-mail: thuto.makgato@wits.ac.za [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Microscopy and Microanalysis Unit, University of the Witwatersrand, Johannesburg 2050 (South Africa); Sideras-Haddad, E. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Centre of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa); Shrivastava, S. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Schenkel, T. [E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ritter, R.; Kowarik, G.; Aumayr, F. [Institute of Applied Physics, TU Wien-Vienna University of Technology, 1040 Vienna (Austria); Crespo Lopez-Urrutia, J.; Bernitt, S.; Beilmann, C.; Ginzel, R. [Max-Planck Institute for Nuclear Physics, Saupfercheckweg 1, 69117 Heidelberg (Germany)

2013-11-01

We investigate the interaction of slow highly charged ion (SHCI) beams with insulating type Ib diamond (1 1 1) surfaces. Bismuth and Xenon SHCI beams produced using an Electron Beam Ion Trap (EBIT) and an Electron Cyclotron Resonance source (ECR) respectively, are accelerated onto type Ib diamond (1 1 1) surfaces with impact velocities up to ≈0.4 υ{sub Bohr}. SHCIs with charge states corresponding to potential energies between 4.5 keV and 110 keV are produced for this purpose. Atomic Force Microscopy analysis (AFM) of the diamond surfaces following SHCI impact reveals surface morphological modifications characterized as nanoscale craters (nano-craters). To interpret the results from Tapping Mode AFM analysis of the irradiated diamond surfaces we discuss the interplay between kinetic and potential energy in nano-crater formation using empirical data together with Stopping and Range of Ions in Matter (SRIM) Monte Carlo Simulations.

Ion beam modification of buckminsterfullerene

International Nuclear Information System (INIS)

Prawer, S.; Nugent, K.W.; McCulloch, D.G.; Leong, W.H.; Hoffman, A.; Kalish, R.

1995-01-01

The response of thin films of buckminsterfullerene (C 60 ) to energetic xenon ion impact is investigated. The diagnostics employed include Fourier Transform Infrared and Raman Spectroscopies, Cross-Sectional Transmission Electron Microscopy, and Atomic Force Microscopy. By combining the information obtained from these diagnostics with that from the dependence of the conductivity on ion dose, it is concluded that each C 60 molecule completely disintegrates when hit by an energetic ion. The cross-section for the destruction of about 7 x 10 -13 cm 2 for irradiation with 620 keV Xe ions. The disintegration occurs when C atoms are knocked-out of the molecule either directly by the impinging ion or by an energetic knock-on C atom with the damage cascade. This process is quite different from the Coulomb Explosion mechanism previously proposed in the literature. For very low ions doses ( 11 Xe/cm 2 ) most of the C 60 molecules remain intact; however this dose is sufficient to completely disrupt the ordering of the C 60 molecules in the van der Waals bonded C 60 solid. Disruption of the lattice ordering at such low doses is considered to be attributable to the weakness of the van der Waals forces which bind the C 60 clusters together into the molecular solid. 13 refs., 7 figs

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

Science.gov (United States)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L. D.

2012-02-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli ( E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

International Nuclear Information System (INIS)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L.D.

2012-01-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli (E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

Electric-field-induced modification in Curie temperature of Co monolayer on Pt(111)

Science.gov (United States)

Nakamura, Kohji; Oba, Mikito; Akiyama, Toru; Ito, Tomonori; Weinert, Michael

2015-03-01

Magnetism induced by an external electric field (E-field) has received much attention as a potential approach for controlling magnetism at the nano-scale with the promise of ultra-low energy power consumption. Here, the E-field-induced modification of the Curie temperature for a prototypical transition-metal thin layer of a Co monolayer on Pt(111) is investigated by first-principles calculations by using the full-potential linearized augmented plane wave method that treats spin-spiral structures in an E-field. An applied E-field modifies the magnon (spin-spiral formation) energies by a few meV, which leads to a modification of the exchange pair interaction parameters within the classical Heisenberg model. With inclusion of the spin-orbit coupling (SOC), the magnetocrystalline anisotropy and the Dzyaloshinskii-Morita interaction are obtained by the second variation SOC method. An E-field-induced modification of the Curie temperature is demonstrated by Monte Carlo simulations, in which a change in the exchange interaction is found to play a key role.

Surface-defect induced modifications in the optical properties of α-MnO{sub 2} nanorods

Energy Technology Data Exchange (ETDEWEB)

John, Reenu Elizabeth [Department of Physics, St. Berchmans College, Changanassery, Kerala 686101 (India); Chandran, Anoop [School of Pure and Applied Physics, MG University, Kottayam, Kerala 686560 (India); Thomas, Marykutty [Department of Physics, BCM College, Kottayam, Kerala 686001 (India); Jose, Joshy [Department of Physics, St. Berchmans College, Changanassery, Kerala 686101 (India); George, K.C., E-mail: drkcgeorge@gmail.com [Department of Physics, St. Berchmans College, Changanassery, Kerala 686101 (India)

2016-03-30

Graphical abstract: - Highlights: • Alpha-MnO{sub 2} nanorods are prepared by chemical method. • Difference in surface defect density is achieved. • Characterized using XRD, Rietveld, XPS, EDS, HR-TEM, BET, UV–vis absorption spectroscopy and PL spectroscopy. • Explains the bandstructure modification due to Jahn–Teller distortions using crystal field theory. • Modification in the intensity of optical emissions related to defect levels validates the concept of surface defect induced tuning of optical properties. - Abstract: The science of defect engineering via surface tuning opens a new route to modify the inherent properties of nanomaterials for advanced functional and practical applications. In this work, two independent synthesis methods (hydrothermal and co-precipitation) are adopted to fabricate α-MnO{sub 2} nanorods with different defect structures so as to understand the effect of surface modifications on their optical properties. The crystal structure and morphology of samples are investigated with the aid of X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Atomic composition calculated from energy dispersive spectroscopy (EDS) confirms non-stoichiometry of the samples. The surface properties and chemical environment are thoroughly studied using X-ray photoelectron spectroscopy (XPS) and Brunauer–Emmett–Teller (BET) analysis. Bond angle variance and bond valence sum are determined to validate distortions in the basic MnO{sub 6} octahedron. The surface studies indicate that the concentration of Jahn–Teller manganese (III) (Mn{sup 3+}) ion in the samples differ from each other which results in their distinct properties. Band structure modifications due to Jahn–Teller distortion are examined with the aid of ultraviolet–visible (UV) reflectance and photoluminescence (PL) studies. The dual peaks obtained in derivative spectrum conflict the current concept on the bandgap energy of MnO{sub 2}. These

The influence of projectile ion induced chemistry on surface pattern formation

Energy Technology Data Exchange (ETDEWEB)

Karmakar, Prasanta, E-mail: prasantak@vecc.gov.in [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India); Satpati, Biswarup [Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064 (India)

2016-07-14

We report the critical role of projectile induced chemical inhomogeneity on surface nanostructure formation. Experimental inconsistency is common for low energy ion beam induced nanostructure formation in the presence of uncontrolled and complex contamination. To explore the precise role of contamination on such structure formation during low energy ion bombardment, a simple and clean experimental study is performed by selecting mono-element semiconductors as the target and chemically inert or reactive ion beams as the projectile as well as the source of controlled contamination. It is shown by Atomic Force Microscopy, Cross-sectional Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy measurements that bombardment of nitrogen-like reactive ions on Silicon and Germanium surfaces forms a chemical compound at impact zones. Continuous bombardment of the same ions generates surface instability due to unequal sputtering and non-uniform re-arrangement of the elemental atom and compound. This instability leads to ripple formation during ion bombardment. For Argon-like chemically inert ion bombardment, the chemical inhomogeneity induced boost is absent; as a result, no ripples are observed in the same ion energy and fluence.

High-energy ion implantation of polymeric fibers for modification of reinforcement-matrix adhesion

International Nuclear Information System (INIS)

Grummon, D.S.; Schalek, R.; Ozzello, A.; Kalantar, J.; Drzal, L.T.

1991-01-01

We have previously reported on the effect of high-energy ion irradiation of ultrahigh molecular weight polyethylene (UHMW-PE), and Kevlar-49 polyaramid fibers, on fiber-matrix adhesion and interfacial shear strength (ISS) in epoxy matrix composites. Irradiation of UHMW-PE fibers produced large improvements in interfacial shear strength, without degrading fiber tensile strength. ISS was not generally affected in irradiated Kevlar-49, and fiber tensile strength decreased. The divergence in response between polyaramid and polyethylene relates both to differences in the mesoscopic structure of the individual fibers, and to the different forms of beam induced structural modification favored by the individual polymer chemistries. Here we report results of surface energy measurements, infrared spectroscopy analysis, and X-ray photoelectron spectroscopy studies on UHMW-PE and polyaramid fibers, irradiated to fluences between 2x10 12 and 5x10 15 cm -2 with N + , Ar + , Ti + , Na + , and He + at energies between 30 and 400 keV. UHMW-PE fibers showed a pronounced increase in the polar component of surface energy which could be associated with carbonyl, hydroxyl and hydroperoxide groups at the surface. Kevlar, on the other hand, tended toward carbonization and showed a decrease in nitrogen and oxygen concentrations and a sharp drop in polar surface energy. (orig.)

Production of amorphous metal layers using ion implantation and investigation of the related modification of some surface properties

International Nuclear Information System (INIS)

Hoang Dac Luc; Vu Hoang Lam.

1993-01-01

Amorphous layers were produced by implanting B + ions into Al at 50 keV. The modification of the electrochemical corrosion resistance and the mechanical strength of implanted specimen was investigated. (author). 2 refs, 1 tab, 2 figs

Plasma assisted surface coating/modification processes: An emerging technology

Science.gov (United States)

Spalvins, T.

1986-01-01

A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation). These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

Plasma assisted surface coating/modification processes - An emerging technology

Science.gov (United States)

Spalvins, T.

1987-01-01

A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation. These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

Ion beam modification of structural and optical properties of GeO2 thin films deposited at various substrate temperatures using pulsed laser deposition

Science.gov (United States)

Rathore, Mahendra Singh; Vinod, Arun; Angalakurthi, Rambabu; Pathak, A. P.; Singh, Fouran; Thatikonda, Santhosh Kumar; Nelamarri, Srinivasa Rao

2017-11-01

High energy heavy ion irradiation-induced modification of high quality crystalline GeO2 thin films grown at different substrate temperatures ranging from 100 to 500 °C using pulsed laser deposition has been investigated. The pristine films were irradiated with 100 MeV Ag7+ ions at fixed fluence of 1 × 1013 ions/cm2. These pristine and irradiated films have been characterized using X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared and photoluminescence spectroscopy. The XRD and Raman results of pristine films confirm the formation of hexagonal structure of GeO2 films, whereas the irradiation eliminates all the peaks except major GeO2 peak of (101) plane. It is evident from the XRD results that crystallite size changes with substrate temperature and SHI irradiation. The surface morphology of films was studied by AFM. The functional group of pristine and irradiated films was investigated by IR transmission spectra. Pristine films exhibited strong photoluminescence around 342 and 470 nm due to oxygen defects and a red shift in the PL bands is observed after irradiation. Possible mechanism of tuning structural and optical properties of pristine as well as irradiated GeO2 films with substrate temperature and ion beam irradiation has been reported in detail.

Use of Intense Ion Beams for Surface Modification and Creation of New Materials

CERN Document Server

Renk, T; Prasad, S V; Provencio, P P; Thompson, M

2002-01-01

We have conducted surface treatment and alloying experiments with Al, Fe, and Ti-based metals on the RHEPP-1 accelerator (0.8 MV, 20 W, 80 ns FHWM, up to 1 Hz repetition rate) at Sandia National Laboratories. Ions are generated by the MAP gas-breakdown active anode, which can yield a number of different beam species including H, N, and C, depending upon the injected gas. Beams of intense pulsed high-power ion beams have been used to produce surface modification by changes in microstructure caused by rapid heating and cooling of the surface. Increase of beam power leads to ablation of a target surface, and redeposition of ablated material onto a separate substrate. Experiments are described in which ion beams are used in an attempt to increase high-voltage breakdown of a treated surface. Surface alloying of coated Pt and Hf layers is also described. This mixing of a previously deposited thin-film layer into a Ti-alloy substrate leads to significantly enhanced surface wear durability, compared to either untreat...

Effect of silver ion-induced disorder on morphological, chemical and optical properties of poly (methyl methacrylate)

Energy Technology Data Exchange (ETDEWEB)

Arif, Shafaq, E-mail: sarif2005@gmail.com [Department of Physics, Lahore College for Women University, Lahore 54000 (Pakistan); Saleemi, Farhat [Department of Physics, Lahore College for Women University, Lahore 54000 (Pakistan); Rafique, M. Shahid [Department of Physics, University of Engineering & Technology, Lahore 54000 (Pakistan); Naab, Fabian; Toader, Ovidiu [Department of Nuclear Engineering and Radiological Sciences, Michigan Ion Beam Laboratory, University of Michigan, MI 48109-2104 (United States); Mahmood, Arshad; Aziz, Uzma [National Institute of Lasers & Optronics (NILOP), P.O. Nilore, Islamabad (Pakistan)

2016-11-15

Ion implantation is a versatile technique to tailor the surface properties of polymers in a controlled manner. In the present study, samples of poly (methyl methacrylate) (PMMA) have been implanted with 400 keV silver (Ag{sup +}) ion beam to various ion fluences ranging from 5 × 10{sup 13} to 5 × 10{sup 15} ions/cm{sup 2}. The effect of Ag{sup +} ion-induced disorder on morphological, chemical and optical properties of PMMA is analyzed using Atomic Force Microscope (AFM), Fourier transform infrared spectroscopy (FTIR) and ultraviolet–visible (UV–Vis) spectroscopy. Furthermore, the electrical conductivity of pristine and implanted PMMA is measured using four probe apparatus. The AFM images revealed the growth of nano-sized grainy structures and hillocks above the surface of implanted PMMA. The FTIR spectra confirmed the modifications in chemical structure of PMMA along with the formation of −C=C− carbon contents. The refractive index, extinction coefficient and photoconductivity of implanted PMMA have been found to increase as a function of ion fluence. Simultaneously, indirect optical band gap is reduced from 3.13 to 0.81 eV at a relatively high fluence (5 × 10{sup 15} ions/cm{sup 2}). A linear correlation has been established between the band gap and Urbach energies. Moreover, the electrical conductivity of Ag{sup +} implanted PMMA has increased from 2.14 × 10{sup −10} (pristine) to 9.6 × 10{sup −6} S/cm.

Factors influencing the contribution of ion-induced nucleation in a boreal forest, Finland

OpenAIRE

S. Gagné; T. Nieminen; T. Kurtén; H. E. Manninen; T. Petäjä; L. Laakso; V.-M. Kerminen; M. Boy; M. Kulmala

2010-01-01

We present the longest series of measurements so far (2 years and 7 months) made with an Ion-DMPS at the SMEAR II measurement station in Hyytiälä, Southern Finland. We show that the classification into overcharged (implying some participation of ion-induced nucleation) and undercharged (implying no or very little participation of ion-induced nucleation) days, based on Ion-DMPS measurements, agrees with the fraction of ion-induced nucleation based on NAIS measurements. Those classes are based ...

Stimulated resonance Raman spectroscopy: An alternative to laser-rf double resonance for ion spectroscopy

International Nuclear Information System (INIS)

Young, L.; Dinneen, T.; Mansour, N.B.

1988-01-01

Stimulated resonance Raman spectroscopy is presented as an alternative to laser-rf double resonance for obtaining high-precision measurements in ion beams. By use of a single-phase modulated laser beam to derive the two required fields, the laser--ion-beam alignment is significantly simplified. In addition, this method is especially useful in the low-frequency regime where the laser-rf double-resonance method encounters difficulties due to modifications of the ion-beam velocity distribution. These modifications, which result from interaction with the traveling rf wave used to induce magnetic dipole transitions, are observed and quantitatively modeled

Radiolysis and sputtering of carbon dioxide ice induced by swift Ti, Ni, and Xe ions

Energy Technology Data Exchange (ETDEWEB)

Mejía, C. [Centre de Recherche sur les Ions, les Matériaux et la Photonique CIMAP (CEA-CNRS-ENSICAEN-UCN), CIMAP-Ganil, BP 5133, Boulevard Henri Becquerel, 14070 Caen Cedex 05 (France); Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, Rua Marquês de São Vicente 225, 22453-900 Rio de Janeiro, RJ (Brazil); Bender, M.; Severin, D. [Materials Research Department, GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt (Germany); Trautmann, C. [Materials Research Department, GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt (Germany); Technische Universität, 64287 Darmstadt (Germany); Boduch, Ph. [Centre de Recherche sur les Ions, les Matériaux et la Photonique CIMAP (CEA-CNRS-ENSICAEN-UCN), CIMAP-Ganil, BP 5133, Boulevard Henri Becquerel, 14070 Caen Cedex 05 (France); Bordalo, V. [Centre de Recherche sur les Ions, les Matériaux et la Photonique CIMAP (CEA-CNRS-ENSICAEN-UCN), CIMAP-Ganil, BP 5133, Boulevard Henri Becquerel, 14070 Caen Cedex 05 (France); Observatório Nacional-MCTI, Rua General José Cristino 77, 20921-400 Rio de Janeiro, RJ (Brazil); Domaracka, A.; Lv, X.Y. [Centre de Recherche sur les Ions, les Matériaux et la Photonique CIMAP (CEA-CNRS-ENSICAEN-UCN), CIMAP-Ganil, BP 5133, Boulevard Henri Becquerel, 14070 Caen Cedex 05 (France); and others

2015-12-15

Solid carbon dioxide (CO{sub 2}) is found in several bodies of the solar system, the interstellar medium (ISM) and young stellar objects, where it is exposed to cosmic and stellar wind radiation. Here, the chemical and physical modifications induced by heavy ion irradiation of pure solid CO{sub 2} at low temperature (T = 15–30 K) are analyzed. The experiments were performed with Ti (550 MeV) and Xe (630 MeV) ions at the UNILAC of GSI/Darmstadt and with Ni ions (46 and 52 MeV) at IRRSUD of GANIL/Caen. The evolution of the thin CO{sub 2} ice films (deposited on a CsI window) was monitored by mid-infrared absorption spectroscopy (FTIR). The dissociation rate of CO{sub 2}, determined from the fluence dependence of the IR absorption peak intensity, is found to be proportional to the electronic stopping power S{sub e}. We also confirm that the sputtering yield shows a quadric increase with electronic stopping power. Furthermore, the production rates of daughter molecules such as CO, CO{sub 3} and O{sub 3} were found to be linear in S{sub e}.

Repair pathways for heavy ion-induced complex DNA double strand breaks

International Nuclear Information System (INIS)

Yajima, Hirohiko; Nakajima, Nakako; Hirakawa, Hirokazu; Murakami, Takeshi; Okayasu, Ryuichi; Fujimori, Akira

2012-01-01

DNA double strand break (DSB) induced by ionizing radiation (IR) is a deleterious damage leading to cell death and genome instability if not properly repaired. It is well known that DSB is repaired by two major pathways, non-homologous end-joining (NHEJ) and homologous recombination (HR). It is also known that NHEJ is dominant throughout the cell cycle after X- or gamma-ray irradiation in mammalian cells, Meanwhile, it is thought that heavy-ion radiation (e.g., carbon-ions, iron-ions) gives rise to clustered DNA damages consisting of not only strand breaks but also aberrant bases in the vicinity of DSBs (complex DSBs). Our previous work suggested that the efficiency of NHEJ is diminished for repair of complex DSBs induced by heavy-ion radiation. We thought that this difficulty in NHEJ process associated with heavy ion induced complex DNA damage might be extended to HR process in cells exposed to heavy ions. In order to find out if this notion is true or not, exposed human cells to X-rays and heavy-ions, and studied HR associated processes at the molecular level. Our result indicates that complex DSBs induced by heavy ions effectively evoke DNA end resection activity during the HR process. Together with our results, a relevant recent progress in the field of DNA DSB repair will be discussed. (author)

Argon ion implantation inducing modifications in the properties of benzene plasma polymers

International Nuclear Information System (INIS)

Rangel, E.C.; Cruz, N.C.; Santos, D.C.R.; Algatti, M.A.; Mota, R.P.; Honda, R.Y.; Silva, P.A.F.; Costa, M.S.; Tabacniks, M.H.

2002-01-01

Benzene plasma polymer films were bombarded with Ar ions by plasma immersion ion implantation. The treatments were performed using argon pressure of 3 Pa and 70 W of applied power. The substrate holder was polarized with high voltage negative pulses (25 kV, 3 Hz). Exposure time to the immersion plasma, t, was varied from 0 to 9000 s. Optical gap and chemical composition of the samples were determined by ultraviolet-visible and Rutherford backscattering spectroscopies, respectively. Film wettability was investigated by the contact angle between a water drop and the film surface. Nanoindentation technique was employed in the hardness measurements. It was observed growth in carbon and oxygen concentrations while there was decrease in the concentration of H atoms with increasing t. Furthermore, film hardness and wettability increased and the optical gap decreased with t. Interpretation of these results is proposed in terms of the chain crosslinking and unsaturation

Surface modification of upconverting nanoparticles by layer-by-layer assembled polyelectrolytes and metal ions.

Science.gov (United States)

Palo, Emilia; Salomäki, Mikko; Lastusaari, Mika

2017-12-15

Modificating and protecting the upconversion luminescence nanoparticles is important for their potential in various applications. In this work we demonstrate successful coating of the nanoparticles by a simple layer-by-layer method using negatively charged polyelectrolytes and neodymium ions. The layer fabrication conditions such as number of the bilayers, solution concentrations and selected polyelectrolytes were studied to find the most suitable conditions for the process. The bilayers were characterized and the presence of the desired components was studied and confirmed by various methods. In addition, the upconversion luminescence of the bilayered nanoparticles was studied to see the effect of the surface modification on the overall intensity. It was observed that with selected deposition concentrations the bilayer successfully shielded the particle resulting in stronger upconversion luminescence. The layer-by-layer method offers multiple possibilities to control the bilayer growth even further and thus gives promises that the use of upconverting nanoparticles in applications could become even easier with less modification steps in the future. Copyright © 2017 Elsevier Inc. All rights reserved.

Transgenerational inheritance or resetting of stress-induced epigenetic modifications: two sides of the same coin.

Science.gov (United States)

Tricker, Penny J

2015-01-01

The transgenerational inheritance of stress-induced epigenetic modifications is still controversial. Despite several examples of defense "priming" and induced genetic rearrangements, the involvement and persistence of transgenerational epigenetic modifications is not known to be general. Here I argue that non-transmission of epigenetic marks through meiosis may be regarded as an epigenetic modification in itself, and that we should understand the implications for plant evolution in the context of both selection for and selection against transgenerational epigenetic memory. Recent data suggest that both epigenetic inheritance and resetting are mechanistically directed and targeted. Stress-induced epigenetic modifications may buffer against DNA sequence-based evolution to maintain plasticity, or may form part of plasticity's adaptive potential. To date we have tended to concentrate on the question of whether and for how long epigenetic memory persists. I argue that we should now re-direct our question to investigate the differences between where it persists and where it does not, to understand the higher order evolutionary methods in play and their contribution.

Transgenerational inheritance or resetting of stress-induced epigenetic modifications: two sides of the same coin.

Directory of Open Access Journals (Sweden)

Penny J Tricker

2015-09-01

Full Text Available The transgenerational inheritance of stress-induced epigenetic modifications is still controversial. Despite several examples of defence ‘priming’ and induced genetic rearrangements, the involvement and persistence of transgenerational epigenetic modifications is not known to be general. Here I argue that non-transmission of epigenetic marks through meiosis may be regarded as an epigenetic modification in itself, and that we should understand the implications for plant evolution in the context of both selection for and selection against transgenerational epigenetic memory. Recent data suggest that both epigenetic inheritance and resetting are mechanistically directed and targeted. Stress-induced epigenetic modifications may buffer against DNA sequence-based evolution to maintain plasticity, or may form part of plasticity’s adaptive potential. To date we have tended to concentrate on the question of whether and for how long epigenetic memory persists. I argue that we should now re-direct our question to investigate the differences between where it persists and where it does not, to understand the higher order evolutionary methods in play and their contribution.

Ion irradiation-induced swelling and hardening effect of Hastelloy N alloy

Energy Technology Data Exchange (ETDEWEB)

Zhang, S.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, D.H.; Chen, H.C.; Lei, G.H.; Huang, H.F.; Zhang, W.; Wang, C.B. [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Yan, L., E-mail: yanlong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Fu, D.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Tang, M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2017-06-15

The volumetric swelling and hardening effect of irradiated Hastelloy N alloy were investigated in this paper. 7 MeV and 1 MeV Xe ions irradiations were performed at room temperature (RT) with irradiation dose ranging from 0.5 to 27 dpa. The volumetric swelling increases with increasing irradiation dose, and reaches up to 3.2% at 27 dpa. And the irradiation induced lattice expansion is also observed. The irradiation induced hardening initiates at low ion dose (≤1dpa) then saturates with higher ion dose. The irradiation induced volumetric swelling may be ascribed to excess atomic volume of defects. The irradiation induced hardening may be explained by the pinning effect where the defects can act as obstacles for the free movement of dislocation lines. And the evolution of the defects' size and number density could be responsible for the saturation of hardness. - Highlights: •Irradiation Swelling: The irradiation induced volumetric swelling increases with ion dose. •Irradiation Hardening: The irradiation hardening initiates below 1 dpa, then saturates with higher ion dose (1–10 dpa). •Irradiation Mechanism: The irradiation phenomena are ascribed to the microstructural evolution of the irradiation defects.

Electron beam induced modification of grafted polyamides

International Nuclear Information System (INIS)

Timus, D.M.; Brasoveanu, M.M.; Bradley, D.A.; Popov, A.M.

1998-01-01

It is well known that irradiation, when applied on its own or in combination with other physical and chemical treatments, can manifest in radiation damage to materials. Radiation processing technology focuses upon producing favourable modification of materials through use of relatively high dose and dose rates. Current interest is in modifying the thermal and electrical properties of textured polymers in an effort to improve safety and wear comfort of clothing. No less important is the production of textiles which are safe to use, both in homes and offices. Present investigations provide additional data in support of findings which show that polyamides, a particular class of textured polymer, are amenable to radiation processing. Accelerated electron beam irradiation of sheets of polyamide fibre results in induced grafting of acrylic and methacrylic acids. The degree of grafting is critically dependent upon irradiation dose and the extent of monomers dilution. Of particular importance is the high correlation which is found between degree of grafting and a decrease in the softening rate of the modified polyamide. A systematic modification of electrical conductivity is also observed. (author)

Mutation induction by ion beams in arabidopsis

International Nuclear Information System (INIS)

Tanaka, Atsushi

1999-01-01

An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M 1 lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by γirradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and γ-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

Mutation induction by ion beams in arabidopsis

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1999-07-01

An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M{sub 1} lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by {gamma}irradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and {gamma}-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

Molecular dynamics studies of the ion beam induced crystallization in silicon

International Nuclear Information System (INIS)

Marques, L.A.; Caturla, M.J.; Huang, H.

1995-01-01

We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecular dynamics techniques. The growth of small crystal seeds embedded in the amorphous phase has been monitored for several temperatures in order to get information on the effect of the thermal temperature increase introduced by the incoming ion. The role of ion-induced defects on the growth has been also studied

Folding two dimensional crystals by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Ochedowski, Oliver; Bukowska, Hanna [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Freire Soler, Victor M. [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Departament de Fisica Aplicada i Optica, Universitat de Barcelona, E08028 Barcelona (Spain); Brökers, Lara [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Ban-d' Etat, Brigitte; Lebius, Henning [CIMAP (CEA-CNRS-ENSICAEN-UCBN), 14070 Caen Cedex 5 (France); Schleberger, Marika, E-mail: marika.schleberger@uni-due.de [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany)

2014-12-01

Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS{sub 2} and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS{sub 2} does not.

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

Energy Technology Data Exchange (ETDEWEB)

Jadhav, Vidya, E-mail: vj1510@yahoo.com

2015-09-01

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10{sup 17} cm{sup −3} were irradiated at 100 MeV Fe{sup 7+} ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10{sup 10}–1 × 10{sup 14} ions cm{sup −2}. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10{sup 13}, 5 × 10{sup 13} and 1 × 10{sup 14} ions cm{sup −2}, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10{sup 13} ion cm{sup −2} was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E{sub 1}, E{sub 1} + Δ and E{sub 2} band gaps in all irradiated samples.

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

International Nuclear Information System (INIS)

Jadhav, Vidya

2015-01-01

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10 17 cm −3 were irradiated at 100 MeV Fe 7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10 10 –1 × 10 14 ions cm −2 . The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10 13 , 5 × 10 13 and 1 × 10 14 ions cm −2 , we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10 13 ion cm −2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E 1 , E 1 + Δ and E 2 band gaps in all irradiated samples

Modification of 300kV RF Ion Source for 1-MV Electrostatic Accelerator at KOMAC

Energy Technology Data Exchange (ETDEWEB)

Kim, Dae-Il; Kwon, Hyeok-Jung; Park, Sae-Hoon; Cho, Yong-Sub [KOMAC, Gyeongju (Korea, Republic of)

2015-05-15

The specifications of the 1-MV electrostatic accelerator are shown as below. High voltage power supply is electron transformer rectifier (ELV) type which was developed in Nuclear Physics Institute (Novosibirsk) for industrial electron accelerators. And accelerator column consists of alumina and metal electrode rings were 0.5m-long brazed structure which can be installed horizontally. In case of ion source for 1-MV electrostatic accelerator, it is chosen a thonemann type rf ion source and 300-kV test-stand was made up to confirm the stable operating conditions. High voltage power supply is fabricated by domestic company, and its operation has been confirming at KOMAC site. Equally, the ion source of 300-kV test-stand should be modified to install into the high voltage power supply. In this paper, modification of ion source of 300-kV test-stand for 1-MV electrostatic accelerator is presented and its processes are considered. 300-kV RF ion source and power supply are testing for the 1-MV electrostatic accelerator and trying for combination between them. The 1-MV electrostatic accelerator will be fabricated with domestic companies and tested in the beam application research building at KOMAC.

Modification of 300kV RF Ion Source for 1-MV Electrostatic Accelerator at KOMAC

International Nuclear Information System (INIS)

Kim, Dae-Il; Kwon, Hyeok-Jung; Park, Sae-Hoon; Cho, Yong-Sub

2015-01-01

The specifications of the 1-MV electrostatic accelerator are shown as below. High voltage power supply is electron transformer rectifier (ELV) type which was developed in Nuclear Physics Institute (Novosibirsk) for industrial electron accelerators. And accelerator column consists of alumina and metal electrode rings were 0.5m-long brazed structure which can be installed horizontally. In case of ion source for 1-MV electrostatic accelerator, it is chosen a thonemann type rf ion source and 300-kV test-stand was made up to confirm the stable operating conditions. High voltage power supply is fabricated by domestic company, and its operation has been confirming at KOMAC site. Equally, the ion source of 300-kV test-stand should be modified to install into the high voltage power supply. In this paper, modification of ion source of 300-kV test-stand for 1-MV electrostatic accelerator is presented and its processes are considered. 300-kV RF ion source and power supply are testing for the 1-MV electrostatic accelerator and trying for combination between them. The 1-MV electrostatic accelerator will be fabricated with domestic companies and tested in the beam application research building at KOMAC

Ion induced high energy electron emission from copper

International Nuclear Information System (INIS)

Ruano, G.; Ferron, J.

2008-01-01

We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He + , Ne + and Ar + ) and Li + ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.

Recent work with fast molecular-ion beams at Argonne National Laboratory

International Nuclear Information System (INIS)

Cooney, P.J.; Gemmell, D.S.; Groeneveld, K.O.; Kanter, E.P.; Pietsch, W.J.; Vager, Z.; Zabransky, B.J.

1979-01-01

Research in these areas during 1979 is summarized: (a) studies of molecular-ion dissociation in gaseous targets, (b) developing an understanding of the origins of central peaks and of the two phenomena of the transmission of fast molecular ions through thin foil targets and of the production of neutral fragments from collision-induced dissociation of fast molecular projectiles, (c) studies exploring the extent to which high-resolution measurements on dissociation fragments can be used to determine the stereochemical structures of the molecular ions in the incident beam, (d) extensive modifications to the beam-line and apparatus at the 4-MV Dynamitron so as to permit a wide variety of coincidence measurements on fragments from collision-induced molecular-ion dissociation

RTV silicone rubber surface modification for cell biocompatibility by negative-ion implantation

International Nuclear Information System (INIS)

Zheng, Chenlong; Wang, Guangfu; Chu, Yingjie; Xu, Ya; Qiu, Menglin; Xu, Mi

2016-01-01

Highlights: • The radiation effect has a greater influence than doping effect on the hydrophilicity of RTV SR. • The implanted ions result in a new surface atomic bonding state and morphology. • Generating hydrophilic functional groups is a reason for the improved cell biocompatibility. • The micro roughness makes the hydrophilicity should be reduced due to the lotus effect. • Cell culture demonstrates that negative-ion implantation can improve biocompatibility. - Abstract: A negative cluster ion implantation system was built on the injector of a GIC4117 tandem accelerator. Next, the system was used to study the surface modification of room temperature vulcanization silicone rubber (RTV SR) for cell biocompatibility. The water contact angle was observed to decrease from 117.6° to 99.3° as the C_1"− implantation dose was increased to 1 × 10"1"6 ions/cm"2, and the effects of C_1"−, C_2"− and O_1"− implantation result in only small differences in the water contact angle at 3 × 10"1"5 ions/cm"2. These findings indicate that the hydrophilicity of RTV SR improves as the dose is increased and that the radiation effect has a greater influence than the doping effect on the hydrophilicity. There are two factors influence hydrophilicity of RTV: (1) based on the XPS and ATR-FTIR results, it can be inferred that ion implantation breaks the hydrophobic functional groups (Si−CH_3, Si−O−Si, C−H) of RTV SR and generates hydrophilic functional groups (−COOH, −OH, Si−(O)_x (x = 3,4)). (2) SEM reveals that the implanted surface of RTV SR appears the micro roughness such as cracks and wrinkles. The hydrophilicity should be reduced due to the lotus effect (Zhou Rui et al., 2009). These two factors cancel each other out and make the C-implantation sample becomes more hydrophilic in general terms. Finally, cell culture demonstrates that negative ion-implantation is an effective method to improve the cell biocompatibility of RTV SR.

Modification of μm thick surface layers using keV ion energies

International Nuclear Information System (INIS)

Rehn, L.E.; Lam, N.Q.; Wiedersich, H.

1983-11-01

Root-mean-square diffusion distances for both vacancy and interstitial defects in metals can be very large at elevated temperatures, e.g. several μm's in one second at 500 0 C. Consequently, defects that escape the implanted region at elevated temperature can produce conpositional and microstructural changes to depths which are much larger than the ion range. Because of the high defect mobilities, and of the fact that diffusion processes must compete with the rate of surface recession, the effects of defect production (ballistic mixing), radiation-enhanced diffusion and radiation-induced segregation become spatially separated during ion bombardment at elevated temperature. Results of such experimental studies in a Cu-Ni alloy are presented, discussed and compared with predictions of a phenomenological model. Contributions to the subsurface compositional changes from radiation-enhanced diffusion and radiation-induced segregation are clearly identified

Single-ion irradiation: physics, technology and applications

International Nuclear Information System (INIS)

Ohdomari, Iwao

2008-01-01

Among the various radiation effects which involve the study of radiation environments, responses of materials and devices to radiation, radiation testing and radiation hardening of devices and equipment, this review mainly considers the radiation effects induced by alpha particles and other ions used in semiconductor technology on Si crystals and Si devices. We first describe the single-ion microprobe that enables the study of the site dependence of radiation hardness in a semiconductor device. Next, we describe single-ion implantation as a tool for suppressing fluctuation in device function induced by the discrete number and random position of dopant atoms. Finally, we describe the common features associated with both 'probing' and 'modification' in terms of the nature and behaviour of defect clusters induced by single-ion irradiation. A special feature of the review is that the radiation effects discussed here are induced by 'single' particles, and not by particle beams. Although there is a great amount of accumulated data on radiation effects, they are discussed in the conventional terms of 'dose' or 'fluence,' whose unit is cm -2 . Therefore, this review provides complementary information on radiation effects. (topical review)

Electronic excitation induced modification in fullerene C{sub 70} thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Pooja [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, R., E-mail: rsinghal.phy@mnit.ac.in [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Banerjee, M.K. [Department of Metallurgical & Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India); Vishnoi, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Department of Physics, Vardhman - PG College, Bijnor 246701, UP (India); Kaushik, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Department of Physics, Shri K.K. Jain - PG College, Khatauli, UP (India); Singh, F. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

2016-07-15

Fullerene C{sub 70} thin films were deposited by resistive heating on glass substrates and the thickness were approximated to be 150 nm. The effect of energy deposition by 55 MeV Si ions on the optical and structural properties of the prepared thin film samples is investigated. The samples were irradiated with 55 MeV Si ions within fluence range from 1 × 10{sup 12} to 3 × 10{sup 13} ions/cm{sup 2}. For optical studies, the pristine and the Si ion irradiated samples are examined by UV–visible absorption spectroscopy and Raman spectroscopy. UV–visible absorption studies reveal that the absorption peaks of irradiated samples decrease with a decrease in the band gap of the thin films. The damage cross-section (σ) and radius of damaged cylindrical zone (r) are determined as ∼0.6 × 10{sup −13} cm{sup 2} and ∼1.41 nm, respectively from the Raman spectra. Raman studies also suggest that at higher fluence (up to 3 × 10{sup 13} ions/cm{sup 2}), the damage caused by the SHI results in partial amorphization of fullerene C{sub 70} thin film. Modification in the surface properties has been investigated by atomic force microscopy; it has revealed that the roughness decreases and average particle size increases with the increase in fluences.

Improving corrosion resistance of magnesium-based alloys by surface modification with hydrogen by electrochemical ion reduction (EIR) and by plasma immersion ion implantation (PIII)

Energy Technology Data Exchange (ETDEWEB)

Bakkar, A. [Institut fuer Materialpruefung und Werkstofftechnik, Dr. Doelling und Dr. Neubert GmbH, Freiberger Strasse 1, 38678 Clausthal (Germany); Department of Metallurgy and Materials Engineering, Suez Canal University, P.O. Box 43721, Suez (Egypt); Neubert, V. [Institut fuer Materialpruefung und Werkstofftechnik, Dr. Doelling und Dr. Neubert GmbH, Freiberger Strasse 1, 38678 Clausthal (Germany)]. E-mail: volkmar.neubert@tu-clausthal.de

2005-05-01

Magnesium-based hydrides are well known that they have a high hydrogen-storage capacity. In this study, two different methods have been provided for hydrogen surface modification of high purity magnesium (hp Mg) and AZ91 magnesium alloy. One was electrochemical ion reduction (EIR) of hydrogen from an alkaline electrolyte on such Mg-based cathode. The other was plasma immersion ion implantation (PIII or PI{sup 3}) into Mg-based substrate. The depth profile of H-modified surfaces was described by Auger electron spectroscopy (AES) and by secondary ion mass spectrometry (SIMS) measurements. Corrosion testing was carried out in Avesta cell by potentiodynamic polarisation in chloride-containing aqueous solutions of pH 7 and pH 12. A greatly significant improvement in the corrosion resistance of H-modified surfaces was verified.

Improving corrosion resistance of magnesium-based alloys by surface modification with hydrogen by electrochemical ion reduction (EIR) and by plasma immersion ion implantation (PIII)

International Nuclear Information System (INIS)

Bakkar, A.; Neubert, V.

2005-01-01

Magnesium-based hydrides are well known that they have a high hydrogen-storage capacity. In this study, two different methods have been provided for hydrogen surface modification of high purity magnesium (hp Mg) and AZ91 magnesium alloy. One was electrochemical ion reduction (EIR) of hydrogen from an alkaline electrolyte on such Mg-based cathode. The other was plasma immersion ion implantation (PIII or PI 3 ) into Mg-based substrate. The depth profile of H-modified surfaces was described by Auger electron spectroscopy (AES) and by secondary ion mass spectrometry (SIMS) measurements. Corrosion testing was carried out in Avesta cell by potentiodynamic polarisation in chloride-containing aqueous solutions of pH 7 and pH 12. A greatly significant improvement in the corrosion resistance of H-modified surfaces was verified

Optically induced structural phase transitions in ion Coulomb crystals

DEFF Research Database (Denmark)

Horak, Peter; Dantan, Aurelien Romain; Drewsen, Michael

2012-01-01

We investigate numerically the structural dynamics of ion Coulomb crystals confined in a three-dimensional harmonic trap when influenced by an additional one-dimensional optically induced periodical potential. We demonstrate that transitions between thermally excited crystal structures, such as b......We investigate numerically the structural dynamics of ion Coulomb crystals confined in a three-dimensional harmonic trap when influenced by an additional one-dimensional optically induced periodical potential. We demonstrate that transitions between thermally excited crystal structures...

Ion induced high energy electron emission from copper

Energy Technology Data Exchange (ETDEWEB)

Ruano, G. [Instituto de Desarrollo Tecnologico para la Industria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina)], E-mail: gdruano@ceride.gov.ar; Ferron, J. [Instituto de Desarrollo Tecnologico para la Industria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina); Departamento de Ingenieria de Materiales, Facultad de Ingenieria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina)

2008-11-15

We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He{sup +}, Ne{sup +} and Ar{sup +}) and Li{sup +} ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.

Ion-induced sputtering

International Nuclear Information System (INIS)

Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

1983-01-01

The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

Probing medium-induced jet splitting and energy loss in heavy-ion collisions

Science.gov (United States)

Chang, Ning-Bo; Cao, Shanshan; Qin, Guang-You

2018-06-01

The nuclear modification of jet splitting in relativistic heavy-ion collisions at RHIC and the LHC energies is studied based on the higher twist formalism. Assuming coherent energy loss for the two splitted subjets, a non-monotonic jet energy dependence is found for the nuclear modification of jet splitting function: strongest modification at intermediate jet energies whereas weaker modification for larger or smaller jet energies. Combined with the smaller size and lower density of the QGP medium at RHIC than at the LHC, this helps to understand the groomed jet measurements from CMS and STAR Collaborations: strong modification of the momentum sharing zg distribution at the LHC and no obvious modification of zg distribution at RHIC. In addition, the observed nuclear modification pattern of the groomed jet zg distribution cannot be explained solely by independent energy loss of the two subjets. Our result may be tested in future measurements of groomed jets with lower jet energies at the LHC and larger jet energies at RHIC, for different angular separations between the two subjets.

Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Trupti, E-mail: tsphy91@gmail.com [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, Rahul; Vishnoi, Ritu [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

2017-04-01

Highlights: • Spin casted PCBM thin films (∼100 nm) are irradiated with 55 MeV Si{sup 4+} ion beam. • The decrease in band gap is observed after irradiation. • The surface properties is also dependent on incident ion fluences. • Polymerization reactions induced by energetic ions leads to modifications. - Abstract: The modifications produced by 55 MeV Si{sup 4+} swift heavy ion irradiation on the phenyl C{sub 61} butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 10{sup 10}, 1 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 10{sup 11} ions/cm{sup 2} fluence, the overlapping of ion tracks starts and produced overlapping effects.

Heavy-ion-induced, gate-rupture in power MOSFETs

International Nuclear Information System (INIS)

Fischer, T.A.

1987-01-01

A new, heavy-ion-induced, burnout mechanism has been experimentally observed in power metal-oxide-semiconductor field-effect transistors (MOSFETs). This mechanism occurs when a heavy, charged particle passes through the gate oxide region of n- or p-channel devices having sufficient gate-to-source or gate-to-drain bias. The gate-rupture leads to significant permanent degradation of the device. A proposed failure mechanism is discussed and experimentally verified. In addition, the absolute immunity of p-channel devices to heavy-ion-induced, semiconductor burnout is demonstrated and discussed along with new, non-destructive, burnout testing methods

Ion induced modification of polymers at energies between 100 keV and 1 GeV applied for optical waveguides and improved metal adhesion

International Nuclear Information System (INIS)

Rueck, D.M.

2000-01-01

Polymers are a class of materials widely used for a broad field of applications. Ion irradiation ranging from several eV to GeV is a quite efficient tool to modify the properties of polymers like wettability, optical properties, adhesion between metal and polymer surfaces. In this paper ion induced chemical changes of polymers will be discussed in relation to the modified macroscopic properties. In the field of optical telecommunication, polymers are discussed as a new class of materials for the fabrication of passive optical devices. Ion irradiation is a promising method to generate structures with a modified index of refraction, which is necessary for the guidance of light with different wavelengths in optical devices. Modified optical properties of different polymers under ion irradiation will be discussed. Analytical investigations like infrared measurements and measurement of the outgassing reaction products during irradiation will be discussed to interpret the chemical changes of the polymers. Metallization of polymers is of interest in several fields of application like for multilayer systems in microtechnology or casings for radiation shielding for example. Ion beam mixing at low energies is a promising method to improve the metal/polymer adhesion. Also ion irradiation at high energies applied to a metal/polymer multilayer can improve the adhesion of a metal layer to a polymer surface, if not sufficient. Different metal/polymer systems will be presented as well as specific applications

Nano-scale surface modification of materials with slow, highly charged ion beams

International Nuclear Information System (INIS)

Sakurai, M.; Tona, M.; Takahashi, S.; Watanabe, H.; Nakamura, N.; Yoshiyasu, N.; Yamada, C.; Ohtani, S.; Sakaue, H.A.; Kawase, Y.; Mitsumori, K.; Terui, T.; Mashiko, S.

2007-01-01

Some results on surface modification of Si and graphite with highly charged ions (HCIs) are presented. Modified surfaces were observed using scanning tunneling microscopy. Crater-like structure with a diameter in nm region is formed on a Si(1 1 1)-(7 x 7) surface by the incidence of a single HCI. The protrusion structure is formed on a highly oriented pyrolytic graphite surface on the other hand, and the structure becomes an active site for molecular adsorption. A new, intense HCI source and an experimental apparatus are under development in order to process and observe aligned nanostructures created by the impact of collimated HCI beam

Ion-induced aerosol formation in a H20-H2S04 system

International Nuclear Information System (INIS)

Raes, F.; Janssens, A.

1986-01-01

The results of an experiment that was set up to demonstrate the occurrence of ion-induced aerosol formation (see Part I of this paper, Raes and Janssens, 1985) are analysed quantitatively by modelling the dynamics of aerosol formation and growth under different irradiation conditions. The model calculations indicate that ion-induced aerosol formation may contribute significantly to the total particle formation in a gas mixture that is simultaneously being irradiated with u.v. and γ irradiation. However, the measurements do not appear to be accurate enough to support these calculations. A qualitative comparison of the experiments with the calculations suggests that ion-induced nucleation is actually occurring in the experiments and that the classical theory of ion-induced aerosol formation may underestimate the actual rate of aerosol formation around ions. (author)

Modeling of intense pulsed ion beam heated masked targets for extreme materials characterization

Science.gov (United States)

Barnard, John J.; Schenkel, Thomas

2017-11-01

Intense, pulsed ion beams locally heat materials and deliver dense electronic excitations that can induce material modifications and phase transitions. Material properties can potentially be stabilized by rapid quenching. Pulsed ion beams with pulse lengths of order ns have recently become available for materials processing. Here, we optimize mask geometries for local modification of materials by intense ion pulses. The goal is to rapidly excite targets volumetrically to the point where a phase transition or local lattice reconstruction is induced followed by rapid cooling that stabilizes desired material's properties fast enough before the target is altered or damaged by, e.g., hydrodynamic expansion. By using a mask, the longitudinal dimension can be large compared to the transverse dimension, allowing the possibility of rapid transverse cooling. We performed HYDRA simulations that calculate peak temperatures for a series of excitation conditions and cooling rates of silicon targets with micro-structured masks and compare these to a simple analytical model. The model gives scaling laws that can guide the design of targets over a wide range of pulsed ion beam parameters.

Oxidative modification of ferritin induced by methylglyoxal

Directory of Open Access Journals (Sweden)

Sung Ho An

2012-03-01

Full Text Available Methylglyoxal (MG was identified as an intermediate innon-enzymatic glycation and increased levels were reported inpatients with diabetes. In this study, we evaluated the effects ofMG on the modification of ferritin. When ferritin wasincubated with MG, covalent crosslinking of the proteinincreased in a time- and MG dose-dependent manner.Reactive oxygen species (ROS scavengers, N-acetyl-L-cysteineand thiourea suppressed the MG-mediated ferritinmodification. The formation of dityrosine was observed inMG-mediated ferritin aggregates and ROS scavengers inhibitedthe formation of dityrosine. During the reaction betweenferritin and MG, the generation of ROS was increased as afunction of incubation time. These results suggest that ROSmay play a role in the modification of ferritin by MG. Thereaction between ferritin and MG led to the release of ironions from the protein. Ferritin exposure to MG resulted in aloss of arginine, histidine and lysine residues. It was assumedthat oxidative damage to ferritin caused by MG may induce anincrease in the iron content in cells, which is deleterious tocells. This mechanism, in part, may provide an explanation orthe deterioration of organs under diabetic conditions. [BMBreports 2012; 45(3: 147-152

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Matsui, T. [Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Aikoh, K. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Sakamaki, M.; Amemiya, K. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Iwase, A. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

2015-12-15

Surface ferromagnetic state of FeRh thin films irradiated with 1 keV Ar ion-beam has been investigated by using soft X-ray Magnetic Circular Dichroism (XMCD). It was revealed that the Fe atoms of the samples were strongly spin-polarized after Ar ion-beam irradiation. Due to its small penetration depth, 1 keV Ar ion-beam irradiation can modify the magnetic state at subsurface of the samples. In accordance with the XMCD sum rule analysis, the main component of the irradiation induced ferromagnetism at the FeRh film surface was to be effective spin magnetic moment, and not to be orbital moment. We also confirmed that the surface ferromagnetic state could be produced by thermal annealing of the excessively ion irradiated paramagnetic subsurface of the FeRh thin films. This novel magnetic modification technique by using ion irradiation and subsequent annealing can be a potential tool to control the surface magnetic state of FeRh thin films.

Setup of an ion-beam facility for the nanostructuration of 2D materials with highly charged ions

International Nuclear Information System (INIS)

Hopster, Johannes

2014-01-01

This work deals with the interaction of highly charged ions with surfaces. When an ion approaches a surface, its potential energy is deposited into the surface via a cascade of electronic processes. A strong electronic excitation of the surface results, which is localized in a nanometer sized region. As a consequence of further mechanisms, this excitation may lead to nanostructures being of topographic, structural or chemical modifications of the material. During this work, a setup of a complete ion beamline was constructed. The beamline offers production, focussing and charge separation of ion beams as well as irradiations of surfaces with highly charged ions. Additionally, new methods for beam profile and particle density analysis via Raman microscopy on graphene are presented. Experimental results of highly charged ions impinging on 2D materials provide the second part of this work. Ion induced nanostructures on lamellar materials, i.e. MoS 2 as well as single layers of graphene, could be identified and analyzed. Each of them were triggered by the potential energy of the ions. Processes of the ion surface interaction could be deduced qualitatively from the data. Local regions of enhanced friction on graphene could be detected by Friction Force Microscopy after irradiations. Thresholds for defect creation were established regarding the potential energy, which depend strongly on the kinetic energy of the ions. In terms of the over the barrier model, this dependency could be related to the time of flight the ion spends above the surface. Defects on irradiated graphene as well as on free standing graphene were analyzed via Raman microscopy. Possible dependencies of the defect diameters and nature on the layer number as well as on the presence of a substrate were proved. It was shown, that graphene becomes locally hydrogenated by the impact of highly charged ions. Such a chemical modification leads to an enhanced friction as well as to an appearance of defect modes

Ion bombardment induced ripple topography on amorphous solids

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Paton, F.; Williams, J.S.

1977-01-01

Earlier studies of the ion bombardment induced ripple morphology on the surfaces of amorphous solids when compared with geomorphological effects are shown to possess many similar features. The present study, with 40 keV Ar + ion bombarded Si suggests that analogies are incomplete, however, and that greater similarities with the process of macroscopic sandblasting (corrosion) exist. It is shown that the genesis of wave like structures on Si is from isolated features, which have the appearance of ripple trains, which are faceted. It is suggested that these features result from particle flux enhancement processes near surface dimples generated by stress induced surface lifting. (author)

Ion beam induced luminescence characterisation of CVD diamond films

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A.A.; Gonon, P.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

Ion beam induced luminescence characterisation of CVD diamond films

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A A; Gonon, P; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

Electron backscatter diffraction studies of focused ion beam induced phase transformation in cobalt

Energy Technology Data Exchange (ETDEWEB)

Jones, H.G., E-mail: helen.jones@npl.co.uk [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Day, A.P. [Aunt Daisy Scientific Ltd, Claremont House, High St, Lydney GL15 5DX (United Kingdom); Cox, D.C. [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)

2016-10-15

A focused ion beam microscope was used to induce cubic to hexagonal phase transformation in a cobalt alloy, of similar composition to that of the binder phase in a hardmetal, in a controlled manner at 0°, 45° and 80° ion incident angles. The cobalt had an average grain size of ~ 20 μm, allowing multiple orientations to be studied, exposed to a range of doses between 6 × 10{sup 7} and 2 × 10{sup 10} ions/μm{sup 2}. Electron backscatter diffraction (EBSD) was used to determine the original and induced phase orientations, and area fractions, before and after the ion beam exposure. On average, less phase transformation was observed at higher incident angles and after lower ion doses. However there was an orientation effect where grains with an orientation close to (111) planes were most susceptible to phase transformation, and (101) the least, where grains partially and fully transformed at varying ion doses. - Highlights: •Ion-induced phase change in FCC cobalt was observed at multiple incidence angles. •EBSD was used to study the relationship between grain orientation and transformation. •Custom software analysed ion dose and phase change with respect to grain orientation. •A predictive capability of ion-induced phase change in cobalt was enabled.

Laser-Induced Fluorescence diagnostic of barium ion plasmas in the Paul Trap Simulator Experiment

International Nuclear Information System (INIS)

Chung, Moses; Gilson, Erik P.; Davidson, Ronald C.; Efthimion, Philip C.; Majeski, Richard; Startsev, Edward A.

2005-01-01

The Paul Trap Simulator Experiment (PTSX) is a cylindrical Paul trap whose purpose is to simulate the nonlinear dynamics of intense charged particle beam propagation in alternating-gradient magnetic transport systems. To investigate the ion plasma microstate in PTSX, including the ion density profile and the ion velocity distribution function, a laser-induced fluorescence diagnostic system is being developed as a nondestructive diagnostic. Instead of cesium, which has been used in the initial phase of the PTSX experiment, barium has been selected as the preferred ion for the laser-induced fluorescence diagnostic. A feasibility study of the laser-induced fluorescence diagnostic using barium ions is presented with the characterization of a tunable dye laser. The installation of the barium ion source and the development of the laser-induced fluorescence diagnostic system are also discussed

Celiac anti-type 2 transglutaminase antibodies induce phosphoproteome modification in intestinal epithelial Caco-2 cells.

Directory of Open Access Journals (Sweden)

Gaetana Paolella

Full Text Available BACKGROUND: Celiac disease is an inflammatory condition of the small intestine that affects genetically predisposed individuals after dietary wheat gliadin ingestion. Type 2-transglutaminase (TG2 activity seems to be responsible for a strong autoimmune response in celiac disease, TG2 being the main autoantigen. Several studies support the concept that celiac anti-TG2 antibodies may contribute to disease pathogenesis. Our recent findings on the ability of anti-TG2 antibodies to induce a rapid intracellular mobilization of calcium ions, as well as extracellular signal-regulated kinase phosphorylation, suggest that they potentially act as signaling molecules. In line with this concept, we have investigated whether anti-TG2 antibodies can induce phosphoproteome modification in an intestinal epithelial cell line. METHODS AND PRINCIPAL FINDINGS: We studied phosphoproteome modification in Caco-2 cells treated with recombinant celiac anti-TG2 antibodies. We performed a two-dimensional electrophoresis followed by specific staining of phosphoproteins and mass spectrometry analysis of differentially phosphorylated proteins. Of 14 identified proteins (excluding two uncharacterized proteins, three were hypophosphorylated and nine were hyperphosphorylated. Bioinformatics analyses confirmed the presence of phosphorylation sites in all the identified proteins and highlighted their involvement in several fundamental biological processes, such as cell cycle progression, cell stress response, cytoskeletal organization and apoptosis. CONCLUSIONS: Identification of differentially phosphorylated proteins downstream of TG2-antibody stimulation suggests that in Caco-2 cells these antibodies perturb cell homeostasis by behaving as signaling molecules. We hypothesize that anti-TG2 autoantibodies may destabilize the integrity of the intestinal mucosa in celiac individuals, thus contributing to celiac disease establishment and progression. Since several proteins here

First-principles investigation of the electronic and Li-ion diffusion properties of LiFePO4 by sulfur surface modification

International Nuclear Information System (INIS)

Xu, Guigui; Zhong, Kehua; Zhang, Jian-Min; Huang, Zhigao

2014-01-01

We present a first-principles calculation for the electronic and Li-ion diffusion properties of the LiFePO 4 (010) surface modified by sulfur. The calculated formation energy indicates that the sulfur adsorption on the (010) surface of the LiFePO 4 is energetically favored. Sulfur is found to form Fe-S bond with iron. A much narrower band gap (0.67 eV) of the sulfur surface-modified LiFePO 4 [S-LiFePO 4 (010)] is obtained, indicating the better electronic conductive properties. By the nudged elastic band method, our calculations show that the activation energy of Li ions diffusion along the one-dimensional channel on the surface can be effectively reduced by sulfur surface modification. In addition, the surface diffusion coefficient of S-LiFePO 4 (010) is estimated to be about 10 −11 (cm 2 /s) at room temperature, which implies that sulfur modification will give rise to a higher Li ion carrier mobility and enhanced electrochemical performance

Heavy-ion induced desorption yields of cryogenic surfaces bombarded with 4.2 MeV/u lead ions

CERN Document Server

Mahner, E; Evans, L; Kollmus, H; Küchler, D; Scrivens, R; Severin, D; Wengenroth, M; CERN. Geneva. ATS Department

2011-01-01

The ion-induced desorption experiment, installed in the CERN Heavy-Ion Accelerator LINAC 3, has been used to study the dynamic outgassing of cryogenic surfaces. Two different targets, bare and goldcoated copper, were bombarded under perpendicular impact with 4.2 MeV/u Pb54+ ions. Partial pressure rises of H2, CH4, CO, and CO2 and effective desorption yields were measured at 300, 77, and 6.3 K using single shot and continuous ion bombardment techniques. We find that the heavy-ion-induced desorption yield is temperature dependent and investigate the influence of CO gas cryosorbed at 6.3 K. The gain in desorption yield reduction at cryogenic temperature vanishes after several monolayers of CO are cryosorbed on both targets. In this paper we describe the new cryogenic target assembly, the temperature-dependent pressure rise, desorption yield, and gas adsorption measurements.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2014-05-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

2014-01-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

RTV silicone rubber surface modification for cell biocompatibility by negative-ion implantation

Energy Technology Data Exchange (ETDEWEB)

Zheng, Chenlong [Key Laboratory of Beam Technology and Material Modification Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, 100875 Beijing (China); Wang, Guangfu, E-mail: 88088@bnu.edu.cn [Key Laboratory of Beam Technology and Material Modification Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, 100875 Beijing (China); Beijing Radiation Center, 100875 Beijing (China); Chu, Yingjie; Xu, Ya; Qiu, Menglin; Xu, Mi [Key Laboratory of Beam Technology and Material Modification Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, 100875 Beijing (China)

2016-03-01

Highlights: • The radiation effect has a greater influence than doping effect on the hydrophilicity of RTV SR. • The implanted ions result in a new surface atomic bonding state and morphology. • Generating hydrophilic functional groups is a reason for the improved cell biocompatibility. • The micro roughness makes the hydrophilicity should be reduced due to the lotus effect. • Cell culture demonstrates that negative-ion implantation can improve biocompatibility. - Abstract: A negative cluster ion implantation system was built on the injector of a GIC4117 tandem accelerator. Next, the system was used to study the surface modification of room temperature vulcanization silicone rubber (RTV SR) for cell biocompatibility. The water contact angle was observed to decrease from 117.6° to 99.3° as the C{sub 1}{sup −} implantation dose was increased to 1 × 10{sup 16} ions/cm{sup 2}, and the effects of C{sub 1}{sup −}, C{sub 2}{sup −} and O{sub 1}{sup −} implantation result in only small differences in the water contact angle at 3 × 10{sup 15} ions/cm{sup 2}. These findings indicate that the hydrophilicity of RTV SR improves as the dose is increased and that the radiation effect has a greater influence than the doping effect on the hydrophilicity. There are two factors influence hydrophilicity of RTV: (1) based on the XPS and ATR-FTIR results, it can be inferred that ion implantation breaks the hydrophobic functional groups (Si−CH{sub 3}, Si−O−Si, C−H) of RTV SR and generates hydrophilic functional groups (−COOH, −OH, Si−(O){sub x} (x = 3,4)). (2) SEM reveals that the implanted surface of RTV SR appears the micro roughness such as cracks and wrinkles. The hydrophilicity should be reduced due to the lotus effect (Zhou Rui et al., 2009). These two factors cancel each other out and make the C-implantation sample becomes more hydrophilic in general terms. Finally, cell culture demonstrates that negative ion-implantation is an effective method

Modification of mechanical properties of Si crystal irradiated by Kr-beam

International Nuclear Information System (INIS)

Guo, Xiaowei; Momota, Sadao; Nitta, Noriko; Yamaguchi, Takaharu; Sato, Noriyuki; Tokaji, Hideto

2015-01-01

Graphical abstract: - Highlights: • Modification of mechanical properties of silicon crystal irradiated by Kr-beam was observed by means of continuous measurements of nano-indentation technique. • Modified mechanical properties show fluence-dependence. • Young's modulus is more sensitive to crystal to amorphous phase transition while hardness is more sensitive to damage induced by ion beam irradiation. • The depth profile of modified mechanical properties have a potential application of determining the longitudinal size of phase transition region induced by nanoindentation. - Abstract: The application of ion-beam irradiation in fabrication of structures with micro-/nanometer scale has achieved striking improvement. However, an inevitable damage results in the change of mechanical properties in irradiated materials. To investigate the relation between mechanical properties and ion-irradiation damages, nanoindentation was performed on crystalline silicon irradiated by Kr-beam with an energy of 240 keV. Modified Young's modulus and nanohardness, provided from the indentation, indicated fluence dependence. Stopping and range of ions in matter (SRIM) calculation, transmission electron microscopy (TEM) observation, and Rutherford backscattering-channeling (RBS-C) measurement were utilized to understand the irradiation effect on mechanical properties. In addition, the longitudinal size of the phase transition region induced by indentation was firstly evaluated based on the depth profile of modified nanohardness

EMPIRE-II 2.18, Comprehensive Nuclear Model Code, Nucleons, Ions Induced Cross-Sections

International Nuclear Information System (INIS)

Herman, Michal Wladyslaw; Panini, Gian Carlo

2003-01-01

1 - Description of program or function: EMPIRE-II is a flexible code for calculation of nuclear reactions in the frame of combined optical, Multi-step Direct (TUL), Multi-step Compound (NVWY) and statistical (Hauser-Feshbach) models. Incident particle can be a nucleon or any nucleus(Heavy Ion). Isomer ratios, residue production cross sections and emission spectra for neutrons, protons, alpha-particles, gamma-rays, and one type of Light Ion can be calculated. The energy range starts just above the resonance region for neutron induced reactions and extends up to several hundreds of MeV for the Heavy Ion induced reactions. IAEA1169/06: This version corrects an error in the Absoft compile procedure. 2 - Method of solution: For projectiles with A<5 EMPIRE calculates fusion cross section using spherical optical model transmission coefficients. In the case of Heavy Ion induced reactions the fusion cross section can be determined using various approaches including simplified coupled channels method (code CCFUS). Pre-equilibrium emission is treated in terms of quantum-mechanical theories (TUL-MSD and NVWY-MSC). MSC contribution to the gamma emission is taken into account. These calculations are followed by statistical decay with arbitrary number of subsequent particle emissions. Gamma-ray competition is considered in detail for every decaying compound nucleus. Different options for level densities are available including dynamical approach with collective effects taken into account. EMPIRE contains following third party codes converted into subroutines: - SCAT2 by O. Bersillon, - ORION and TRISTAN by H. Lenske and H. Wolter, - CCFUS by C.H. Dasso and S. Landowne, - BARMOM by A. Sierk. 3 - Restrictions on the complexity of the problem: The code can be easily adjusted to the problem by changing dimensions in the dimensions.h file. The actual limits are set by the available memory. In the current formulation up to 4 ejectiles plus gamma are allowed. This limit can be relaxed

Epigenetic Analysis of Heavy-ion Radiation Induced Bystander Effects in Mice

Science.gov (United States)

Zhang, Meng; Sun, Yeqing; Cui, Changna; Xue, Bei

Abstract: Radiation-induced bystander effect was defined as the induction of damage in neighboring non-hit cells by signals released from directly-irradiated cells. Recently, low dose of high LET radiation induced bystander effects in vivo have been reported more and more. It has been indicated that radiation induced bystander effect was localized not only in bystander tissues but also in distant organs. Genomic, epigenetic and proteomics plays significant roles in regulating heavy-ion radiation stress responses in mice. To identify the molecular mechanism that underlies bystander effects of heavy-ion radiation, the male Balb/c and C57BL mice were exposed head-only to 40, 200, 2000mGy dose of (12) C heavy-ion radiation, while the rest of the animal body was shielded. Directly radiation organ ear and the distant organ liver were detected on 1h, 6h, 12h and 24h after radiation, respectively. Methylation-sensitive amplification polymorphism (MSAP) was used to monitor the level of polymorphic genomic DNA methylation changed with dose and time effects. The results show that heavy-ion irradiated mouse head could induce genomic DNA methylation changes significantly in both the directly radiation organ ear and the distant organ liver. The percent of DNA methylation changes were time-dependent and tissue-specific. Demethylation polymorphism rate was highest separately at 1 h in 200 mGy and 6 h in 2000 mGy after irradiation. The global DNA methylation changes tended to occur in the CG sites. The results illustrated that genomic methylation changes of heavy ion radiation-induced bystander effect in liver could be obvious 1 h after radiation and achieved the maximum at 6 h, while the changes could recover gradually at 12 h. The results suggest that mice head exposed to heavy-ion radiation can induce damage and methylation pattern changed in both directly radiation organ ear and distant organ liver. Moreover, our findings are important to understand the molecular mechanism of

Deuterium ion irradiation induced blister formation and destruction

Energy Technology Data Exchange (ETDEWEB)

Song, Jaemin; Kim, Nam-Kyun; Kim, Hyun-Su; Jin, Younggil; Roh, Ki-Baek; Kim, Gon-Ho, E-mail: ghkim@snu.ac.kr

2016-11-01

Highlights: • The areal number density of blisters on the grain with (1 1 1) plane orientation increased with increasing ion fluence. • No more blisters were created above the temperature about 900 K due to high thermal mobility of ions and inactivity of traps. • The destruction of blister at the boundary induced by sputtering is proposed. • The blisters were destructed at the position about the boundary by high sputtering yield of oblique incident ions and thin thickness due to plastic deformation at the boundary. - Abstract: The blisters formation and destruction induced by the deuterium ions on a polycrystalline tungsten were investigated with varying irradiation deuterium ion fluence from 3.04 × 10{sup 23} to 1.84 × 10{sup 25} D m{sup −2} s{sup −1} and an fixed irradiated ion energy of 100 eV in an electron cyclotron resonance plasma source, which was similar to the far-scrape off layer region in the nuclear fusion reactors. Target temperature was monitored during the irradiation. Most of blisters formed easily on the grain with (1 1 1) plane orientation which had about 250 nm in diameter. In addition, the areal number density of blisters increased with increasing the ion fluence under the surface temperature reaching to about 900 K. When the fluence exceeded 4.6 × 10{sup 24} D m{sup −2}, the areal number density of the blister decreased. It could be explained that the destruction of the blister was initiated by erosion at the boundary region where the thickness of blister lid was thin and the sputtering yield was high by oblique incident ions, resulting in remaining the lid open, e.g., un-eroded center dome. It is possible to work as a tungsten dust formation from the plasma facing divertor material at far-SOL region of fusion reactor.

Heavy ion and proton-induced single event multiple upset

International Nuclear Information System (INIS)

Reed, R.A.; Carts, M.A.; Marshall, P.W.

1997-01-01

Individual ionizing heavy ion events are shown to cause two or more adjacent memory cells to change logic states in a high density CMOS SRAM. A majority of the upsets produced by normally incident heavy ions are due to single-particle events that causes a single cell to upset. However, for grazing angles a majority of the upsets produced by heavy-ion irradiation are due to single-particle events that cause two or more cells to change logic states. Experimental evidence of a single proton-induced spallation reaction that causes two adjacent memory cells to change logic states is presented. Results from a dual volume Monte-Carlo simulation code for proton-induced single-event multiple upsets are within a factor of three of experimental data for protons at normal incidence and 70 degrees

EPR study of N+-ion-induced free radical formation in antibiotic-producers

International Nuclear Information System (INIS)

Xie Liqing; Zhang Yinfen; Chen Ruyi; Gao Juncheng; Zhang Peiling; Ying Hengfeng.

1995-01-01

Under the room temperature, electron paramagnetic resonance (EPR) spectrometer was used to study free radical formation in antibiotic-producers in order to investigate antibiotic-producer mutagenic breeding, which were induced by N + ion implanting into antibiotic-producers (e.g., Streptomyces ribosidificus, Streptomyces kanamyceticus and the phage-resistant culture of Streptomyces kanamyceticus). The results show that a lot of free radicals can be induced by N + ion implanting into antibiotic-producers, and the yields of the free radicals increase with implanting dose. The death rate of antibiotic-producers rises due to the increase of N + -ion-induced free radical yields. (author)

Nuclear dynamics in heavy ion induced fusion-fission reactions

International Nuclear Information System (INIS)

Kapoor, S.S.

1992-01-01

Heavy ion induced fission and fission-like reactions evolve through a complex nuclear dynamics encountered in the medium energy nucleus-nucleus collisions. In the recent years, measurements of the fragment-neutron and fragment-charged particle angular correlations in heavy ion induced fusion-fission reactions, have provided new information on the dynamical times of nuclear deformations of the initial dinuclear complex to the fission saddle point and the scission point. From the studies of fragment angular distributions in heavy ion induced fission it has been possible to infer the relaxation times of the dinuclear complex in the K-degree of freedom and our recent measurements on the entrance channel dependence of fragment anisotropies have provided an experimental signature of the presence of fissions before K-equilibration. This paper reviews recent experimental and theoretical status of the above studies with particular regard to the questions relating to dynamical times, nuclear dissipation and the effect of nuclear dissipation on the K-distributions at the fission saddle in completely equilibrated compound nucleus. (author). 19 refs., 9 figs

Heavy-ion induced desorption yields of amorphous carbon films bombarded with 4.2 MeV/u lead ions

CERN Document Server

Mahner, E; Küchler, D; Scrivens, R; Costa Pinto, P; Yin Vallgren, C; Bender, M

2011-01-01

During the past decade, intense experimental studies on the heavy-ion induced molecular desorption were performed in several particle accelerator laboratories worldwide in order to understand and overcome large dynamic pressure rises caused by lost beam ions. Different target materials and various coatings were studied for desorption and mitigation techniques were applied to heavy-ion accelerators. For the upgrade of the CERN injector complex, a coating of the Super Proton Synchrotron (SPS) vacuum system with a thin film of amorphous carbon is under study to mitigate the electron cloud effect observed during SPS operation with the nominal proton beam for the Large Hadron Collider (LHC). Since the SPS is also part of the heavy-ion injector chain for LHC, dynamic vacuum studies of amorphous carbon films are important to determine their ion induced desorption yields. At the CERN Heavy Ion Accelerator (LINAC 3), carbon-coated accelerator-type stainless steel vacuum chambers were tested for desorption using 4.2 Me...

The present state and perspectives of low-energy heavy ion biology

International Nuclear Information System (INIS)

Yuan Chengling; Yu Zengliang

2004-01-01

The interaction between low-energy ions and matter has been concerned rarely comparing to that of high-energy ions. It is even more unusual to find studies of the interaction of low-energy ions and complicated organisms. However, the discovery of bioeffects induced by ion beam implantation has opened a new branch in the field of ion beam applications in the life science--Low-energy Heavy Ion Biology. The mutagenic effect of low energy heavy ions was firstly reported in 1986 in rice. Since then, a damage mechanism involved in energy absorption, mass deposition, and charge exchange has been proposed. Accumulating evidence has indicated that these three factors are key determinants in the bioeffects induced by low energy heavy ions, which has opened new opportunities for mutational breeding, gene transferring, cell modification, and cell fusion. In recent years, the ion beam implantation technique has been widely applied in many fields, and increasing research interest in the field has been seen. The authors summarize recent advances in research on the role of low-energy ions in terms of the mechanisms and applications

Study on evolution of gases from fluoropolymer films bombarded with heavy ions

International Nuclear Information System (INIS)

Minamisawa, Renato Amaral; Zimmerman, Robert Lee; Budak, Satilmis; Ila, Daryush

2008-01-01

Ion beam bombardment provides a unique way of material modification by inducing a high degree of localized electronic excitation. The ion track, or affected volume along the ion path through the material is related to the total damage and possible structural changes. Here we study the evolution of gases emitted by poly(tetrafluorethylene-co-perfluoro-(propyl vinyl ether)) (PFA) fluoropolymer bombarded with MeV gold ions. The gas was monitored by a residual gas analyzer (RGA), as a function of the ion fluence. Micro-Raman, atomic force microscopy and optical absorption were used to analyze the chemical structure changes and sputtering yield

Reduction and structural modification of zirconolite on He{sup +} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Gupta, Merry, E-mail: g41merry@gmail.com [Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, Punjab 148106 (India); Kulriya, P.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067 (India); Department of Mechanical, Aerospace & Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Shukla, Rishabh; Dhaka, R.S. [Novel Materials and Interface Physics Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Raj [Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067 (India); Ghumman, S.S. [Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, Punjab 148106 (India)

2016-07-15

The immobilization of minor actinides and alkaline-earth metal is a major concern in nuclear industry due to their long-term radioactive contribution to the high level waste (HLW). Materials having zirconolite, pyrochlore, and perovskite structure are promising candidates for immobilization of HLW. The zirconolite which exhibits high radiation stability and corrosion resistance behavior is investigated for its radiation stability against alpha particles in the present study. CaZrTi{sub 2}O{sub 7} pellets prepared using solid state reaction techniques, were irradiated with 30 keV He{sup +} ions for the ion fluence varying from 1 × 10{sup 17} to 1 × 10{sup 21} ions/m{sup 2}. Scanning electron microscopy (SEM) images of the un-irradiated sample exhibited well separated grains with average size of about 6.8 μm. On the ion irradiation, value of the average grains size was about 7.1 μm, and change in the microstructure was insignificant. The X-ray photoelectron spectroscopy (XPS) studies showed a shift in the core level peak position (of Ca 2p, Ti 2p and Zr 3d) towards lower binding energy with respect to pristine sample as well as loss of oxygen was also observed for sample irradiated with the ion fluence of 1 × 10{sup 20} ions/m{sup 2}. These indicate a decrease in co-ordination number and the ionic character of M−O bond. Moreover, core level XPS signal was not detected for sample irradiated with ion fluence of 1 × 10{sup 21} ions/m{sup 2}, suggesting surface damage of the sample at this ion fluence. However, X-ray diffraction (XRD) studies showed that zirconolite was not amorphized even on irradiation up to a fluence order of 1 × 10{sup 21} ion/m{sup 2}. But, significant decrease in peak intensity due to creation of defects and a marginal positive peak shift due to tensile strain induced by irradiation, were observed. Thus, XRD along with XPS investigation suggests that reduction, decrease in co-ordination number, and increase in covalency are responsible for

High fluence swift heavy ion structure modification of the SiO{sub 2}/Si interface and gate insulator in 65 nm MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Ma, Yao [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gao, Bo, E-mail: gaobo@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Willis, Maureen [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); Guan, Mingyue [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

2017-04-01

In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO{sub 2}/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO{sub 2} and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

Science.gov (United States)

Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

1998-05-01

Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

Fragmentation study of isolated and nano-solvated biomolecules induced by collision with multiply charged ions and neutral particles

International Nuclear Information System (INIS)

Bernigaud, V.

2009-01-01

This thesis concerns a gas phase study of the fragmentation of bio-molecular systems induced by slow collisions with multiply charged ions (in the keV-region), alkali atoms and rare gases. The main objective was to study the physical processes involved in the dissociation of highly electronically excited systems. In order to elucidate the intrinsic properties of certain biomolecules (porphyrins and amino acids) we have performed experiments in the gas phase with isolated systems. The obtained results demonstrate the high stability of porphyrins after electron removal and attachment. Furthermore, a dependence of the fragmentation pattern produced by multiply charged ions on the isomeric structure of the alanine molecule has been shown. In a second part of the thesis, a strong influence of the environment of the biomolecule on the fragmentation channels, their modification and their new opening, has been clearly proven. This phenomenon occurs in the presence of other surrounding biomolecules (clusters of nucleobases) as well as for molecules of a solvent (molecules of water, methanol and acetonitrile) in which the biomolecule is embedded. In order to extend these studies to larger systems, a new experimental set-up, based on an electro-spray ion source combined with a quadrupole mass filter has been developed. Due to the successful tests and proposed improvements of the device future experiments will become available concerning the fragmentation of large charged and solvated bio-molecular systems induced by collision processes. (author) [fr

Modification of radiation-induced division delay by caffeine analogues and dibutyryl cyclic AMP

Energy Technology Data Exchange (ETDEWEB)

Kimler, B.F.; Leeper, D.B.; Snyder, M.H.; Rowley, R.; Schneiderman, M.H. (Thomas Jefferson Univ., Philadelphia, PA (USA). Hospital)

1982-01-01

The mitotic selection procedure for cell cycle analysis was utilized to investigate the concentration-dependent modification of x-radiation-induced division delay in Chinese hamster ovary (CHO) cells by methyl xanthines (caffeine, theophylline, and theobromine) and by dibutyryl cyclic AMP. The methyl xanthines (concentrations from 0.5 to 1000 ..mu..g/ml) all reduced radiation-induced division delay with the effect being linear between approximately 100 and 1000 ..mu..g/ml. After doses of 100-300 rad, delay was reduced by 75, 94 or 83 per cent at 1000 ..mu..g/ml for each drug, respectively. However, the addition of dibutyryl cyclic AMP had an opposite effect: radiation-induced delay was increased by the concentration range of 0.3 to 300 ..mu..g/ml. These results indicate that in mammalian cells the control of cell cycle progression and the modification of radiation-induced division delay are not simply related to intracellular levels of cyclic AMP. Rather, there appear to be at least two competing mechanisms which are differentially affected by caffeine analogues or by direct addition of dibutyryl cyclic AMP. The direct effect of caffeine and the methyl xanthines on membrane calcium permeability is considered.

Modification of radiation-induced division delay by caffeine analogues and dibutyryl cyclic AMP

International Nuclear Information System (INIS)

Kimler, B.F.; Leeper, D.B.; Snyder, M.H.; Rowley, R.; SChneiderman, M.H.

1982-01-01

The mitotic selection procedure for cell cycle analysis was utilized to investigate the concentration-dependent modification of x-radiation-induced division delay in Chinese hamster ovary (CHO) cells by methyl xanthines (caffeine, theophylline, and theobromine) and by dibutyryl cyclic AMP. The methyl xanthines (concentrations from 0.5 to 1000 μg/ml) all reduced radiation-induced division delay with the effect being linear between approximately 100 and 1000 μg/ml. After doses of 100-300 rad, delay was reduced by 75, 94 or 83 per cent at 1000 μg/ml for each drug, respectively. However, the addition of dibutyryl cyclic AMP had an opposite effect: radiation-induced delay was increased by the concentration range of 0.3 to 300 μg/ml. These results indicate that in mammalian cells the control of cell cycle progression and the modification of radiation-induced division delay are not simply related to intracellular levels of cyclic AMP. Rather, there appear to be at least two competing mechanisms which are differentially affected by caffeine analogues or by direct addition of dibutyryl cyclic AMP. The direct effect of caffeine and the methyl xanthines on membrane calcium permeability is considered. (author)

Nanoscale surface modification of Li-rich layered oxides for high-capacity cathodes in Li-ion batteries

Science.gov (United States)

Lan, Xiwei; Xin, Yue; Wang, Libin; Hu, Xianluo

2018-03-01

Li-rich layered oxides (LLOs) have been developed as a high-capacity cathode material for Li-ion batteries, but the structural complexity and unique initial charging behavior lead to several problems including large initial capacity loss, capacity and voltage fading, poor cyclability, and inferior rate capability. Since the surface conditions are critical to electrochemical performance and the drawbacks, nanoscale surface modification for improving LLO's properties is a general strategy. This review mainly summarizes the surface modification of LLOs and classifies them into three types of surface pre-treatment, surface gradient doping, and surface coating. Surface pre-treatment usually introduces removal of Li2O for lower irreversible capacity while surface doping is aimed to stabilize the structure during electrochemical cycling. Surface coating layers with different properties, protective layers to suppress the interface side reaction, coating layers related to structural transformation, and electronic/ionic conductive layers for better rate capability, can avoid the shortcomings of LLOs. In addition to surface modification for performance enhancement, other strategies can also be investigated to achieve high-performance LLO-based cathode materials.

In-medium Modifications of Hadron Masses and Chemical Freeze-out in Ultra-relativistic Heavy-ion Collisions

International Nuclear Information System (INIS)

Florkowski, W.; Broniowski, W.

1999-10-01

We confront the hypothesis of chemical freeze-out in ultra-relativistic heavy-ion collisions with the hypothesis of large modifications of hadron masses in nuclear medium. We find that the thermal-model predictions for the ratios of particle multiplicities are sensitive to the values of in-medium hadronic masses. In particular, the π + /p ratio decreases by 35% when the masses of all hadrons (except for pseudo-Goldstone bosons) are scaled down by 30%. (author)

Modification of structural and magnetic properties of soft magnetic multi-component metallic glass by 80 MeV {sup 16}O{sup 6+} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Kane, S.N., E-mail: kane_sn@yahoo.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Shah, M.; Satalkar, M.; Gehlot, K. [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Kulriya, P.K.; Avasthi, D.K. [Inter-University Accelerator Centre, P.O. Box No. 10502, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sinha, A.K. [Raja Ramanna Centre for Advanced Technology, P.O. CAT, Indore 452013 (India); Modak, S.S. [Physics Department, Jaypee University of Eng. & Tech., A-B Road, Raghogarh, Guna 473226 (India); Ghodke, N.L.; Reddy, V.R. [UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India); Varga, L.K. [RISSPO, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

2016-07-15

Effect of 80 MeV {sup 16}O{sup 6+} ion irradiation in amorphous Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy is reported. Electronic energy loss induced modifications in the structural and, magnetic properties were monitored by synchrotron X-ray diffraction (SXRD), Mössbauer and, magnetic measurements. Broad amorphous hump seen in SXRD patterns reveals the amorphous nature of the studied specimens. Mössbauer measurements suggest that: (a) alignment of atomic spins within ribbon plane, (b) changes in average hyperfine field suggests radiation-induced decrease in the inter atomic distance around Mössbauer (Fe) atom, (c) hyperfine field distribution confirms the presence of non-magnetic elements (e.g. – B, P, C) in the first near-neighbor shell of the Fe atom, thus reducing its magnetic moment, and (d) changes in isomer shift suggests variation in average number of the metalloid near neighbors and their distances. Minor changes in soft magnetic behavior – watt loss and, coercivity after an irradiation dose of 2 × 10{sup 13} ions/cm{sup 2} suggests prospective application of Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy as core material in accelerators (radio frequency cavities).

Ion induced optical emission for surface and depth profile analysis

International Nuclear Information System (INIS)

White, C.W.

1977-01-01

Low-energy ion bombardment of solid surfaces results in the emission of infrared, visible, and ultraviolet radiation produced by inelastic ion-solid collision processes. The emitted optical radiation provides important insight into low-energy particle-solid interactions and provides the basis for an analysis technique which can be used for surface and depth profile analysis with high sensitivity. The different kinds of collision induced optical radiation emitted as a result of low-energy particle-solid collisions are reviewed. Line radiation arising from excited states of sputtered atoms or molecules is shown to provide the basis for surface and depth profile analysis. The spectral characteristics of this type of radiation are discussed and applications of the ion induced optical emission technique are presented. These applications include measurements of ion implant profiles, detection sensitivities for submonolayer quantities of impurities on elemental surfaces, and the detection of elemental impurities on complex organic substrates

Surface modification effects of fluorine-doped tin dioxide by oxygen plasma ion implantation

Science.gov (United States)

Tang, Peng; Liu, Cai; Zhang, Jingquan; Wu, Lili; Li, Wei; Feng, Lianghuan; Zeng, Guanggen; Wang, Wenwu

2018-04-01

SnO2:F (FTO), as a kind of transparent conductive oxide (TCO), exhibits excellent transmittance and conductivity and is widely used as transparency electrodes in solar cells. It's very important to modifying the surface of FTO for it plays a critical role in CdTe solar cells. In this study, modifying effects of oxygen plasma on FTO was investigated systematically. Oxygen plasma treatment on FTO surface with ion accelerating voltage ranged from 0.4 kV to 1.6 kV has been processed. The O proportion of surface was increased after ion implantation. The Fermi level of surface measurement by XPS valance band spectra was lowered as the ion accelerating voltage increased to 1.2 kV and then raised as accelerating voltage was elevated to 1.6 kV. The work function measured by Kelvin probe force microscopy increased after ion implanting, and it was consistent with the variation of Fermi level. The change of energy band structure of FTO surface mainly originated from the surface composition variation. As FTO conduction was primarily due to oxyanion hole, the carrier was electron and its concentration was reduced while O proportion was elevated at the surface of FTO, as a result, the Fermi level lowered and the work function was enlarged. It was proved that oxygen plasma treatment is an effective method to modulate the energy band structure of the surface as well as other properties of FTO, which provides much more space for interface and surface modification and then photoelectric device performance promotion.

Ion implantation induced blistering of rutile single crystals

Energy Technology Data Exchange (ETDEWEB)

Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

2015-07-01

The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

Novel metal ion surface modification technique

International Nuclear Information System (INIS)

Brown, I.G.; Godechot, X.; Yu, K.M.

1990-10-01

We describe a method for applying metal ions to the near-surface region of solid materials. The added species can be energetically implanted below the surface or built up as a surface film with an atomically mixed interface with the substrate; the metal ion species can be the same as the substrate species or different from it, and more than one kind of metal species can be applied, either simultaneously or sequentially. Surface structures can be fabricated, including coatings and thin films of single metals, tailored alloys, or metallic multilayers, and they can be implanted or added onto the surface and ion beam mixed. We report two simple demonstrations of the method: implantation of yttrium into a silicon substrate at a mean energy of 70 keV and a dose of 1 x 10 16 atoms/cm 2 , and the formation of a titanium-yttrium multilayer structure with ion beam mixing to the substrate. 17 refs., 3 figs

Tungstate-induced color-pattern modifications of butterfly wings are independent of stress response and ecdysteroid effect.

Science.gov (United States)

Otaki, Joji M; Ogasawara, Tsuyoshi; Yamamoto, Haruhiko

2005-06-01

Systemic injections of sodium tungstate, a protein-tyrosine phosphatase (PTPase) inhibitor, to pupae immediately after pupation have been shown to efficiently produce characteristic color-pattern modifications on the wings of many species of butterflies. Here we demonstrated that the tungstate-induced modification pattern was entirely different from other chemically-induced ones in a species of nymphalid butterfly Junonia (Precis) orithya. In this species, the systemic injections of tungstate produced characteristic expansion of black area and shrinkage of white area together with the move of parafocal elements toward the wing base. Overall, pattern boundaries became obscure. In contrast, an entirely different modification pattern, overall darkening of wings, was observed by the injections of stress-inducing chemicals, thapsigargin, ionomycin, or geldanamycin, to pupae under the rearing conditions for the adult summer form. On the ventral wings, this darkening was due to an increase of the proportion of peppered dark scales, which was reminiscent of the natural fall form of this species. Under the same rearing conditions, the injections of ecdysteroid, which is a well-known hormone being responsible for the seasonal polyphenism of nymphalid butterflies, yielded overall expansion of orange area especially around eyespots. Taken together, we conclude that the tungstate-induced modifications are clearly distinguishable from those of stress response and ecdysteroid effect. This conclusion then suggests that the putative PTPase signaling pathway that is sensitive to tungstate uniquely contributes to the wing-wide color-pattern development in butterflies.

Jets and Jet-like Correlations in Heavy Ion and p+p Collisions at PHENIX

International Nuclear Information System (INIS)

2010-01-01

Jets from heavy ion collisions provide a measurement of the medium-induced parton energy loss and the in-medium fragmentation properties. The medium modification effects are determined by comparing to a p+p baseline measurement, but the high multiplicity background in a heavy ion collision inhibits the direct application of traditional jet reconstruction techniques and novel approaches are needed to deal with this environment. Alternatively, angular correlations between the hadronic fragments of energetic partons can be used to understand the hot dense matter produced in relativistic heavy ion collisions. The yield and shape modifications of the away side peaks as function of transverse momentum compared to p+p has been interpreted as a medium response to parton energy loss. Direct photon-hadron correlations are another excellent channel to study jets from heavy ion collisions. Photons do not interact strongly with the medium and thus the photon approximately balances the momentum of the opposing jet, allowing the measurement of the effective modification to the fragmentation function through jet energy loss in the medium.

Ion Beams: A Powerful Tool for Making New Functional Materials

International Nuclear Information System (INIS)

Dev, B. N.

2010-01-01

It is well known that ion beams play an important role in semiconductor industry, which utilizes ion implantation and irradiation for materials modification. Ion sputtering technique is used to fabricate multifunctional coatings and multilayers. Using ion implantation, there is a continued effort for fabrication of quantum bit structures for future quantum computers. Availability of focused ion beams (FIBs) has widened the applications of ion beams and nanostructured functional materials are being fabricated using FIBs. Various quantum structures can be fabricated using FIB. Ferromagnetism can either be induced or destroyed in special layered structures using ion irradiation. The magnetic exchange bias phenomenon is of tremendous utility in magnetic recording. Issues of lateral diffusion in nanoscale doping of semiconductors by FIB and an example of exchange bias enhancement by ion irradiation are discussed.

Swift heavy ion induced modification in morphological and physico-chemical properties of tin oxide nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Jaiswal, Manoj Kumar [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Kumar, Rajesh, E-mail: rajeshkumaripu@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India)

2013-11-15

Nanocomposite thin films of tin oxide (SnO{sub 2})/titanium oxide (TiO{sub 2}) were grown on silicon (1 0 0) substrates by electron beam evaporation deposition technique using sintered nanocomposite pellet of SnO{sub 2}/TiO{sub 2} in the percentage ratio of 95:5. Sintering of the nanocomposite pellet was done at 1300 °C for 24 h. The thicknesses of these films were measured to be 100 nm during deposition using piezo-sensor attached to the deposition chamber. TiO{sub 2} doped SnO{sub 2} nanocomposite films were irradiated by 100 MeV Au{sup 8+} ion beam at fluence range varying from 1 × 10{sup 11} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2} at Inter University Accelerator Center (IUAC), New Delhi, India. Chemical properties of pristine and ion irradiation modified thin films were characterized by Fourier Transform Infrared (FTIR) spectroscopy. FTIR peak at 610 cm{sup −1} confirms the presence of O–Sn–O bridge of tin (IV) oxide signifying the composite nature of pristine and irradiated thin films. Atomic Force Microscope (AFM) in tapping mode was used to study the surface morphology and grain growth due to swift heavy ion irradiation at different fluencies. Grain size calculations obtained from sectional analysis of AFM images were compared with results obtained from Glancing Angle X-ray Diffraction (GAXRD) measurements using Scherrer’s formulae. Phase transformation due to irradiation was observed from Glancing Angle X-ray Diffraction (GAXRD) results. The prominent 2θ peaks observed in GAXRD spectrum are at 30.67°, 32.08°, 43.91°, 44.91° and 52.35° in the irradiated films.

Atomistic modeling of ion beam induced amorphization in silicon

International Nuclear Information System (INIS)

Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria; Barbolla, Juan

2005-01-01

Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work, we briefly describe the existing phenomenological and defect-based amorphization models. We focus on the atomistic model we have developed to describe ion beam induced amorphization in Si. In our model, the building block for the amorphous phase is the bond defect or IV pair, whose stability increases with the number of surrounding IV pairs. This feature explains the regrowth behavior of different damage topologies and the kinetics of the crystalline to amorphous transition. The model provides excellent quantitative agreement with experimental results

Towards Liquid Chromatography Time-Scale Peptide Sequencing and Characterization of Post-Translational Modifications in the Negative-Ion Mode Using Electron Detachment Dissociation Tandem Mass Spectrometry

DEFF Research Database (Denmark)

Kjeldsen, Frank; Hørning, Ole B; Jensen, Søren S

2008-01-01

Electron detachment dissociation (EDD) of peptide poly-anions is gentle towards post-translational modifications (PTMs) and produces predictable and interpretable fragment ion types (a., x ions). However, EDD is considered an inefficient fragmentation technique and has not yet been implemented...... coverage and extended PTM characterization the new regime of EDD in combination with other ion-electron fragmentation techniques in the positive-ion mode is a step towards a more comprehensive strategy of analysis in proteome research....

Poly(vinylidene fluoride) modification induced by gamma irradiation for application as ionic polymer-metal composite

International Nuclear Information System (INIS)

Ferreira, Henrique Perez

2011-01-01

Gamma-radiation-induced grafting of styrene into poly(vinylidene fluoride) (PVDF) films with 0.125 mm thickness at doses from 1 to 100 kGy in the presence of a styrene/N,N- dimethylformamide (DMF) solution (1:1, v/v) and styrene/toluene (1:1, v/v) at dose rate of 5 kGy h-1 was carried out by simultaneous method under nitrogen atmosphere at room temperature, using gamma rays from a Co-60. After grafting reactions, the polymer was then sulfonated in chlorosulfonic acid/1,2-dichloroethane (2 and 10%) for 3 hours. The films were characterized before and after modification by calculating the degree of grafting (DOG), infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), differential scanning calorimetry (DSC) and thermogravimetry (TG/DTG). DOG results show that grafting increases with dose, and varies enormously depending on the solvent used, with DOGs about 20 times greater in DMF than in toluene. It was possible to confirm the grafting of styrene by FT-IR due to the appearance of the new characteristic peaks and by the TG and DSC which exhibited changes in the thermal behavior of the grafted/sulfonated material. Sulfonated material was also characterized by ion exchange capacity (IEC) showed that both DOG and sulfonic acid concentration increase IEC values. Results showed that it is possible to obtain materials with ion exchange capacity of possible application as ionic polymer-metal composites. (author)

Ag+12 ion induced modifications of structural and optical properties of ZnO-PMMA nanocomposite films

International Nuclear Information System (INIS)

Sharma, Sarla; Vijay, Y. K.; Vyas, Rishi

2013-01-01

The influence of swift heavy ion (SHI) irradiation on structural and photoluminescence (PL) properties of ZnO-PMMA nanocomposite films, prepared by solution casting method, was studied. The ZnO-PMMA nanocomposite films were irradiated using 120 MeV Ag +12 ions at different fluences varying from 1×10 11 to 1×10 13 ions/cm 2 . The intensity of the X-ray diffraction peaks is increased at the high fluence, without evolution of any new peak. A shift in absorption edge (i.e. shift in optical band gap) towards higher wavelength was observed after irradiation and PL from ZnO-PMMA nanocomposite films is found to increase up to a critical fluence and then found to be suppressed for higher fluence (1×10 12 ion/cm 2 ). The change in photoluminescence after irradiation can be attributed to the change in microstructure of PMMA matrix as well as the agglomeration of ZnO nanoparticles.

Ion-solid interactions for materials modification and processing

International Nuclear Information System (INIS)

Poker, D.B.; Ila, D.; Cheng, Y.T.; Harriott, L.R.; Sigmon, T.W.

1996-01-01

Topics ranged from the very fundamental ion-solid interactions to the highly device-oriented semiconductor applications. Highlights of the symposium featured in this volume include: nanocrystals in insulators, plasma immersion ion implantation. Focused ion beams, molecular dynamics simulations of ion-surface interactions, ion-beam mixing of insulators, GeV ion irradiation, electro-optical materials, polymers, tribological materials, and semiconductor processing. Separate abstracts were prepared for most papers in this volume

Degradation of polyimide under irradiation with swift heavy ions

International Nuclear Information System (INIS)

Severin, D.; Ensinger, W.; Neumann, R.; Trautmann, C.; Walter, G.; Alig, I.; Dudkin, S.

2005-01-01

Stacks of polyimide foils were irradiated with different swift heavy ions (Ti, Mo, Au) of 11.1 MeV/nucleon energy and fluences between 1 x 10 10 and 2 x 10 12 ions/cm 2 . Beam-induced degradation of the imide group was analyzed by Fourier-transform infrared spectroscopy studying the absorption band at 725 cm -1 as a function of dose. In the UV-Vis spectral range, the absorption edge is shifted to larger wavelengths indicating carbonization. Such modifications are linked to the deposition of a critical dose of 2.7 MGy (Ti) and 1 MGy (Mo, Au). In addition, irradiation-induced changes of the electrical conductivity were studied by means of dielectric spectroscopy

Recent advances in heavy-ion-induced fission

International Nuclear Information System (INIS)

Plasil, F.

1984-01-01

Three topics are discussed. The first deals with results that have been published recently on angular-momentum-dependent fission barriers. They are discussed because of the significance that we attach to them. We feel that, after a decade of study and controversy, we have arrived at a quantitative understanding of the competition between heavy-ion-induced fission and particle emission from compound nuclei at relatively low bombarding energies. The second topic concerns the extension of our heavy-ion-induced fission studies to higher energies. It is clear that in this regime the effects, both of fission following incomplete fusion and of extra-push requirements, need to be considered. Finally, discussed are our recent conclusions concerning the fissionlike decay of products from reactions between two 58 Ni nuclei at an incident energy, E/A, of 15.3 MeV, as well as the impact of our findings on the conclusions drawn from previous, similar measurements. 39 references

Modification of photosensing property of CdS–Bi{sub 2}S{sub 3} bi-layer by thermal annealing and swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Shaikh, Shaheed U.; Siddiqui, Farha Y. [Thin Film and Nanotechnology Laboratory, Department of Physics (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Singh, Fouran; Kulriya, Pawan K. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Phase, D.M. [UGC DAE Consortium for Scientific Research, Khandwa Road, Indore 452017 (India); Sharma, Ramphal, E-mail: ramphalsharma@yahoo.com [Thin Film and Nanotechnology Laboratory, Department of Physics (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India)

2016-02-01

The CdS–Bi{sub 2}S{sub 3} bi-layer thin films have been deposited on Indium Tin Oxide (ITO) glass substrates at room temperature by Chemical Bath Deposition Technique (CBD) and bi-layer thin films were annealed in air atmosphere for 1 h at 250 {sup °}C. The air annealed sample was irradiated using Au{sup 9+} ions at the fluence 5 × 10{sup 11} ion/cm{sup 2} with 120 MeV energy. Effects of Swift Heavy Ion (SHI) irradiation on CdS–Bi{sub 2}S{sub 3} bi-layer thin films were studied. The results are explained on the basis annealing and high electronic excitation, using X-ray diffraction (XRD), Selective Electron Area Diffraction (SEAD), Atomic Force Microscopy (AFM), Raman Spectroscopy, UV spectroscopy and I–V characteristics. The photosensing property after illumination of visible light over the samples is studied. These as-deposited, annealed and irradiated bi-layer thin films are used to sense visible light at room temperature. - Graphical abstract: Schematic illustration of CdS–Bi{sub 2}S{sub 3} bi-layer thin film (a) As-deposited (b) Annealed (c) irradiated sample respectively (d) Model of bi-layer photosensor device (e) Graph of illumination intensity verses photosensitivity. - Highlights: • CdS–Bi{sub 2}S{sub 3} bi-layer thin film prepared at room temperature. • Irradiated using Au{sup 9+} ions at the fluence of 5 × 10{sup 11} ion/cm{sup 2} with 120 MeV energy. • Study of modification induced by irradiations. • Study of Photosensitivity after annealing and irradiation.

InSourcerer: a high-throughput method to search for unknown metabolite modifications by mass spectrometry.

Science.gov (United States)

Mrzic, Aida; Lermyte, Frederik; Vu, Trung Nghia; Valkenborg, Dirk; Laukens, Kris

2017-09-15

Using mass spectrometry, the analysis of known metabolite structures has become feasible in a systematic high-throughput fashion. Nevertheless, the identification of previously unknown structures remains challenging, partially because many unidentified variants originate from known molecules that underwent unexpected modifications. Here, we present a method for the discovery of unknown metabolite modifications and conjugate metabolite isoforms in a high-throughput fashion. The method is based on user-controlled in-source fragmentation which is used to induce loss of weakly bound modifications. This is followed by the comparison of product ions from in-source fragmentation and collision-induced dissociation (CID). Diagonal MS 2 -MS 3 matching allows the detection of unknown metabolite modifications, as well as substructure similarities. As the method relies heavily on the advantages of in-source fragmentation and its ability to 'magically' elucidate unknown modification, we have named it inSourcerer as a portmanteau of in-source and sorcerer. The method was evaluated using a set of 15 different cytokinin standards. Product ions from in-source fragmentation and CID were compared. Hierarchical clustering revealed that good matches are due to the presence of common substructures. Plant leaf extract, spiked with a mix of all 15 standards, was used to demonstrate the method's ability to detect these standards in a complex mixture, as well as confidently identify compounds already present in the plant material. Here we present a method that incorporates a classic liquid chromatography/mass spectrometry (LC/MS) workflow with fragmentation models and computational algorithms. The assumptions upon which the concept of the method was built were shown to be valid and the method showed that in-source fragmentation can be used to pinpoint structural similarities and indicate the occurrence of a modification. Copyright © 2017 John Wiley & Sons, Ltd.

Pivotal Role of O-GlcNAc Modification in Cold-Induced Thermogenesis by Brown Adipose Tissue Through Mitochondrial Biogenesis.

Science.gov (United States)

Ohashi, Natsuko; Morino, Katsutaro; Ida, Shogo; Sekine, Osamu; Lemecha, Mengistu; Kume, Shinji; Park, Shi-Young; Choi, Cheol Soo; Ugi, Satoshi; Maegawa, Hiroshi

2017-09-01

Adipose tissues considerably influence metabolic homeostasis, and both white (WAT) and brown (BAT) adipose tissue play significant roles in lipid and glucose metabolism. O -linked N -acetylglucosamine ( O -GlcNAc) modification is characterized by the addition of N -acetylglucosamine to various proteins by O -GlcNAc transferase (Ogt), subsequently modulating various cellular processes. However, little is known about the role of O -GlcNAc modification in adipose tissues. Here, we report the critical role of O -GlcNAc modification in cold-induced thermogenesis. Deletion of Ogt in WAT and BAT using adiponectin promoter-driven Cre recombinase resulted in severe cold intolerance with decreased uncoupling protein 1 (Ucp1) expression. Furthermore, Ogt deletion led to decreased mitochondrial protein expression in conjunction with decreased peroxisome proliferator-activated receptor γ coactivator 1-α protein expression. This phenotype was further confirmed by deletion of Ogt in BAT using Ucp1 promoter-driven Cre recombinase, suggesting that O -GlcNAc modification in BAT is responsible for cold-induced thermogenesis. Hypothermia was significant under fasting conditions. This effect was mitigated after normal diet consumption but not after consumption of a fatty acid-rich ketogenic diet lacking carbohydrates, suggesting impaired diet-induced thermogenesis, particularly by fat. In conclusion, O -GlcNAc modification is essential for cold-induced thermogenesis and mitochondrial biogenesis in BAT. Glucose flux into BAT may be a signal to maintain BAT physiological responses. © 2017 by the American Diabetes Association.

Single ion induced surface nanostructures: a comparison between slow highly charged and swift heavy ions.

Science.gov (United States)

Aumayr, Friedrich; Facsko, Stefan; El-Said, Ayman S; Trautmann, Christina; Schleberger, Marika

2011-10-05

This topical review focuses on recent advances in the understanding of the formation of surface nanostructures, an intriguing phenomenon in ion-surface interaction due to the impact of individual ions. In many solid targets, swift heavy ions produce narrow cylindrical tracks accompanied by the formation of a surface nanostructure. More recently, a similar nanometric surface effect has been revealed for the impact of individual, very slow but highly charged ions. While swift ions transfer their large kinetic energy to the target via ionization and electronic excitation processes (electronic stopping), slow highly charged ions produce surface structures due to potential energy deposited at the top surface layers. Despite the differences in primary excitation, the similarity between the nanostructures is striking and strongly points to a common mechanism related to the energy transfer from the electronic to the lattice system of the target. A comparison of surface structures induced by swift heavy ions and slow highly charged ions provides a valuable insight to better understand the formation mechanisms. © 2011 IOP Publishing Ltd

Nitric oxide-mediated bystander signal transduction induced by heavy-ion microbeam irradiation

Science.gov (United States)

Tomita, Masanori; Matsumoto, Hideki; Funayama, Tomoo; Yokota, Yuichiro; Otsuka, Kensuke; Maeda, Munetoshi; Kobayashi, Yasuhiko

2015-07-01

In general, a radiation-induced bystander response is known to be a cellular response induced in non-irradiated cells after receiving bystander signaling factors released from directly irradiated cells within a cell population. Bystander responses induced by high-linear energy transfer (LET) heavy ions at low fluence are an important health problem for astronauts in space. Bystander responses are mediated via physical cell-cell contact, such as gap-junction intercellular communication (GJIC) and/or diffusive factors released into the medium in cell culture conditions. Nitric oxide (NO) is a well-known major initiator/mediator of intercellular signaling within culture medium during bystander responses. In this study, we investigated the NO-mediated bystander signal transduction induced by high-LET argon (Ar)-ion microbeam irradiation of normal human fibroblasts. Foci formation by DNA double-strand break repair proteins was induced in non-irradiated cells, which were co-cultured with those irradiated by high-LET Ar-ion microbeams in the same culture plate. Foci formation was suppressed significantly by pretreatment with an NO scavenger. Furthermore, NO-mediated reproductive cell death was also induced in bystander cells. Phosphorylation of NF-κB and Akt were induced during NO-mediated bystander signaling in the irradiated and bystander cells. However, the activation of these proteins depended on the incubation time after irradiation. The accumulation of cyclooxygenase-2 (COX-2), a downstream target of NO and NF-κB, was observed in the bystander cells 6 h after irradiation but not in the directly irradiated cells. Our findings suggest that Akt- and NF-κB-dependent signaling pathways involving COX-2 play important roles in NO-mediated high-LET heavy-ion-induced bystander responses. In addition, COX-2 may be used as a molecular marker of high-LET heavy-ion-induced bystander cells to distinguish them from directly irradiated cells, although this may depend on the time

Study of the mechanisms of heavy-ion induced desorption on accelerator-relevant materials

International Nuclear Information System (INIS)

Bender, Markus

2008-01-01

The ion beam loss induced desorption is a performance limitation for low charge state heavy ion accelerators. If charge exchanged projectile ions get lost onto the beam pipe, desorption of gas is stimulated resulting in a pressure increase inside of the synchrotron and thus, a dramatically reduction of the beam life time. To minimize the amount of desorbed gas an experimental program has been started to measure the desorption yields (released gas molecules per incident ion) of various materials and different projectile ions. The present work is a contribution to the understanding of the physical processes behind the ion beam loss induced desorption. The yield measurements by the pressure rise method have been combined for the rst time with in situ ion beam analysis technologies such as ERDA and RBS. With this unique method the desorption behavior of a sample can be correlated to its surface and bulk properties. The performed experiments with 1,4 MeV/u Xenon-Ions show that the ion induced desorption is mainly a surface effect. Sputtered oxide layers or impurities do not contribute to the desorbed gas significantly. Nevertheless bulk properties play an important role in the desorption strength. Pure metallic samples desorb less gas than isolating materials under swift heavy ion irradiation. From the experimental results it was possible to estimate the desorption yields of various materials under ion bombardment by means of an extended inelastic thermal-spike-model. The extension is the combination of the thermal-spike's temperature map with thermal desorption. Within this model the ion induced desorption can be regarded as the release of adsorbates from a transient overheated spot on the samples surface around the ion impact. Finally a copper substrate with a gold coated surface was developed and proposed as a suitable material for a beam loss collimator with minimum desorption to ensure the performance of GSI's SIS18 in high current beam operation. (orig.)

New electron-ion-plasma equipment for modification of materials and products surface

International Nuclear Information System (INIS)

Koval', N.N.

2013-01-01

Electron-ion-plasma treatment of materials and products, including surface clearing and activation, formation surface layers with changed chemical and phase structure, increased hardness and corrosion resistance; deposition of various functional coatings, has received a wide distribution in a science and industry. Widespread methods of ion-plasma modification of material and product surfaces are ion etching and activation, ion-plasma nitriding, arc or magnetron deposition of functional coatings, including nanostructured. The combination of above methods of surface modification allows essentially to improve exploitation properties of treated products and to optimize the characteristics of modified surfaces for concrete final requirements. For the purpose of a combination of various methods of ion-plasma treatment in a single work cycle at Institute of High Current Electronics of SB RAS (IHCE SB RAS) specialized technological equipment 'DUET', 'TRIO' and 'QUADRO' and 'KVINTA' have been developed. This equipment allow generating uniform low-temperature gas plasma at pressures of (0.1-1) Pa with concentration of (10 9 -10 11 ) cm -3 in volume of (0.1-1) m 3 . In the installations consistent realization of several various operations of materials and products treatment in a single work cycle is possible. The operations are preliminary heating and degassing, ion clearing, etching and activation of materials and products surface by plasma of arc discharges; chemicothermal treatment (nitriding) for formation of diffusion layer on a surface of treated sample using plasma of nonself-sustained low-pressure arc discharge; deposition of single- or multilayered superhard (≥40 GPa) nanocrystalline coatings on the basis of pure metals or their compounds (nitrides, carbides, carbonitrides) by the arc plasma-assisted method. For realization of the modes all installations are equipped by original sources of gas and metal plasma. Besides, in

Quantification of ion-induced molecular fragmentation of isolated 2-deoxy-D-ribose molecules

NARCIS (Netherlands)

Alvarado Chacon, F.; Bari, S.; Hoekstra, R.A.; Schlathölter, T.A.

2006-01-01

Recent experiments on low energy ion-induced damage to DNA building blocks indicate that ion induced DNA damage is dominated by deoxyribose disintegration (Phys. Rev. Lett., 2005, 95, 153201). We have studied interactions of keV H+ and Heq+ with isolated deoxyribose molecules by means of high

Electron emission from solids induced by swift heavy ions

International Nuclear Information System (INIS)

Xiao Guoqing

2000-01-01

The recent progresses in experimental and theoretical studies of the collision between swift heavy ion and solids as well as electron emission induced by swift heavy ion in solids were briefly reviewed. Three models, Coulomb explosion, thermal spike and repulsive long-lived states, for interpreting the atomic displacements stimulated by the electronic energy loss were discussed. The experimental setup and methods for measuring the electron emission from solids were described. The signification deviation from a proportionality between total electron emission yields and electronic stopping power was found. Auger-electron and convoy-electron spectra are thought to be a probe for investigating the microscopic production mechanisms of the electronic irradiation-damage. Electron temperature and track potential at the center of nuclear tracks in C and polypropylene foils induced by 5 MeV/u heavy ions, which are related to the electronic excitation density in metals and insulators respectively, were extracted by measuring the high resolution electron spectra

Ion beam modification of biological materials in nanoscale

Science.gov (United States)

Yu, L. D.; Anuntalabhochai, S.

2012-07-01

Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.

Ion beam modification of biological materials in nanoscale

International Nuclear Information System (INIS)

Yu, L.D.; Anuntalabhochai, S.

2012-01-01

Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.

Ion-induced effects on metallic nanoparticles

International Nuclear Information System (INIS)

Klimmer, Andreas

2010-01-01

This work deals with the ion-irradiation of metallic nanoparticles in combination with various substrates. Particle diameters were systematically varied within the range of 2.5-14 nm, inter-particle distances range from 30-120 nm. Irradiations were performed with various inert gas ions with energies of 200 keV, resulting in an average ion range larger than the particle dimensions and therefore the effects of irradiation are mainly due to creation of structural defects within the particles and the underlying substrate as well. The main part of this work deals with ion-induced burrowing of metallic nanoparticles into the underlying substrate. The use of micellar nanoparticles with sharp size distribution combined with AFM and TEM analysis allows a much more detailed look at this effect than other works on that topic so far. With respect to the particle properties also a detailed look on the effect of irradiation on the particle structure would be interesting, which might lead to a deliberate influence on magnetic properties, for example. Within the context of this work, first successful experiments were performed on FePt particles, showing a significant reduction of the ordering temperature leading to the magnetically interesting, ordered L1 0 phase. (orig.)

Ion and laser beam induced metastable alloy formation

International Nuclear Information System (INIS)

Westendorp, J.F.M.

1986-01-01

This thesis deals with ion and laser beam induced thin film mixing. It describes the development of an Ultra High Vacuum apparatus for deposition, ion irradiation and in situ analysis of thin film sandwiches. This chamber has been developed in close collaboration with High Voltage Engineering Europa. Thin films can be deposited by an e-gun evaporator. The atom flux is monitored by a quadrupole mass spectrometer. A comparison is made between ion beam and laser mixing of Cu with Au and Cu with W. The comparison provides a better understanding of the relative importance of purely collisional mixing, the role of thermodynamic effects and the contribution of diffusion due to defect generation and migration. (Auth.)

Ion induced polymerization in benzene frozen films

Energy Technology Data Exchange (ETDEWEB)

Calcagno, G [Catania Univ. (Italy). Ist. di Fisica; Strazzulla, G [Catania Univ. (Italy). Osservatorio Astrofisico; Fichera, M; Foti, G [Catania Univ. (Italy). Ist. di Radiologia

1983-07-01

The cross section of the polymerization process induced by energetic protons colliding with frozen benzene layers has been measured. The results have been described by a simple theory and they show that the process is a volume one occurring along the ion track and interesting all of the crossed layers.

Low-energy plasma immersion ion implantation to induce DNA transfer into bacterial E. coli

Energy Technology Data Exchange (ETDEWEB)

Sangwijit, K. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Sarapirom, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Bang Khen, Chiang Mai 50290 (Thailand); Pitakrattananukool, S. [School of Science, University of Phayao, Muang, Phayao 56000 (Thailand); Anuntalabhochai, S. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand)

2015-12-15

Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 10{sup 12} to 1 × 10{sup 17} ions/cm{sup 2} treated cells of Escherichia coli (E. coli). Subsequently, DNA transfer was operated by mixing the PIII-treated cells with DNA. Successes in PIII-induced DNA transfer were demonstrated by marker gene expressions. The induction of DNA transfer was ion-energy, fluence and DNA-size dependent. The DNA transferred in the cells was confirmed functioning. Mechanisms of the PIII-induced DNA transfer were investigated and discussed in terms of the E. coli cell envelope anatomy. Compared with conventional ion-beam-induced DNA transfer, PIII-induced DNA transfer was simpler with lower cost but higher efficiency.

Hypoxia-induced oxidative base modifications in the VEGF hypoxia-response element are associated with transcriptionally active nucleosomes.

Science.gov (United States)

Ruchko, Mykhaylo V; Gorodnya, Olena M; Pastukh, Viktor M; Swiger, Brad M; Middleton, Natavia S; Wilson, Glenn L; Gillespie, Mark N

2009-02-01

Reactive oxygen species (ROS) generated in hypoxic pulmonary artery endothelial cells cause transient oxidative base modifications in the hypoxia-response element (HRE) of the VEGF gene that bear a conspicuous relationship to induction of VEGF mRNA expression (K.A. Ziel et al., FASEB J. 19, 387-394, 2005). If such base modifications are indeed linked to transcriptional regulation, then they should be detected in HRE sequences associated with transcriptionally active nucleosomes. Southern blot analysis of the VEGF HRE associated with nucleosome fractions prepared by micrococcal nuclease digestion indicated that hypoxia redistributed some HRE sequences from multinucleosomes to transcriptionally active mono- and dinucleosome fractions. A simple PCR method revealed that VEGF HRE sequences harboring oxidative base modifications were found exclusively in mononucleosomes. Inhibition of hypoxia-induced ROS generation with myxathiozol prevented formation of oxidative base modifications but not the redistribution of HRE sequences into mono- and dinucleosome fractions. The histone deacetylase inhibitor trichostatin A caused retention of HRE sequences in compacted nucleosome fractions and prevented formation of oxidative base modifications. These findings suggest that the hypoxia-induced oxidant stress directed at the VEGF HRE requires the sequence to be repositioned into mononucleosomes and support the prospect that oxidative modifications in this sequence are an important step in transcriptional activation.

Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations

International Nuclear Information System (INIS)

D'Orleans, C.

2003-07-01

This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co + ions have been implanted at 160 keV at fluences of 2.10 16 , 5.10 16 and 10 17 at/cm 2 , and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10 16 Co + /cm 2 at 77 K, to 9.7 nm at 10 17 Co + /cm 2 at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

Structuring of material parameters in lithium niobate crystals with low-mass, high-energy ion radiation

Science.gov (United States)

Peithmann, K.; Eversheim, P.-D.; Goetze, J.; Haaks, M.; Hattermann, H.; Haubrich, S.; Hinterberger, F.; Jentjens, L.; Mader, W.; Raeth, N. L.; Schmid, H.; Zamani-Meymian, M.-R.; Maier, K.

2011-10-01

Ferroelectric lithium niobate crystals offer a great potential for applications in modern optics. To provide powerful optical components, tailoring of key material parameters, especially of the refractive index n and the ferroelectric domain landscape, is required. Irradiation of lithium niobate crystals with accelerated ions causes strong structured modifications in the material. The effects induced by low-mass, high-energy ions (such as 3He with 41 MeV, which are not implanted, but transmit through the entire crystal volume) are reviewed. Irradiation yields large changes of the refractive index Δn, improved domain engineering capability within the material along the ion track, and waveguiding structures. The periodic modification of Δn as well as the formation of periodically poled lithium niobate (PPLN) (supported by radiation damage) is described. Two-step knock-on displacement processes, 3He→Nb and 3He→O causing thermal spikes, are identified as origin for the material modifications.

Study on the effects of ion motion on laser-induced plasma wakes

International Nuclear Information System (INIS)

Zhou Suyun; Yu Wei; Yuan Xiao; Xu Han; Cao, L. H.; Cai, H. B.; Zhou, C. T.

2012-01-01

A 2D analytical model is presented for the generation of plasma wakes (or bubbles) with an ultra-intense laser pulse by taking into account the response of plasma ions. It is shown that the effect of ion motion becomes significant at the laser intensity exceeding 10 21 W/cm 2 and plasma background density below 10 19 cm −3 . In this regime, ion motion tends to suppress the electrostatic field induced by charge separation and makes the electron acceleration less effective. As a result, the assumption of immobile ions overestimates the efficiency of laser wake-field acceleration of electrons. Based on the analytical model, the dynamics of plasma ions in laser-induced wake field is investigated. It is found that only one bubble appears as the plasmas background density exceeds the resonant density and the deposited laser energy is concentrated into the bubble, resulting in the generation of an ion bunch with extremely high energy density.

Ion induced electron emission statistics under Agm- cluster bombardment of Ag

Science.gov (United States)

Breuers, A.; Penning, R.; Wucher, A.

2018-05-01

The electron emission from a polycrystalline silver surface under bombardment with Agm- cluster ions (m = 1, 2, 3) is investigated in terms of ion induced kinetic excitation. The electron yield γ is determined directly by a current measurement method on the one hand and implicitly by the analysis of the electron emission statistics on the other hand. Successful measurements of the electron emission spectra ensure a deeper understanding of the ion induced kinetic electron emission process, with particular emphasis on the effect of the projectile cluster size to the yield as well as to emission statistics. The results allow a quantitative comparison to computer simulations performed for silver atoms and clusters impinging onto a silver surface.

Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

Energy Technology Data Exchange (ETDEWEB)

Vittone, E., E-mail: ettore.vittone@unito.it [Department of Physics, NIS Research Centre and CNISM, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Pastuovic, Z. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Breese, M.B.H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Garcia Lopez, J. [Centro Nacional de Aceleradores (CNA), Sevilla University, J. Andalucia, CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jaksic, M. [Department for Experimental Physics, Ruder Boškovic Institute (RBI), P.O. Box 180, 10002 Zagreb (Croatia); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland); Siegele, R. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Simon, A. [International Atomic Energy Agency (IAEA), Vienna International Centre, P.O. Box 100, 1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary); Vizkelethy, G. [Sandia National Laboratories (SNL), PO Box 5800, Albuquerque, NM (United States)

2016-04-01

Highlights: • We study the electronic degradation of semiconductors induced by ion irradiation. • The experimental protocol is based on MeV ion microbeam irradiation. • The radiation induced damage is measured by IBIC. • The general model fits the experimental data in the low level damage regime. • Key parameters relevant to the intrinsic radiation hardness are extracted. - Abstract: This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

Irradiation influence on Mylar and Makrofol induced by argon ions in a plasma immersion ion implantation system

Energy Technology Data Exchange (ETDEWEB)

Hassan, A. [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); El-Saftawy, A.A., E-mail: aama1978@yahoo.com [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Aal, S.A. Abd El [Central Lab. for Elemental & Isotopic Analysis, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Ghazaly, M. El [Physiology Department, College of Medicine, Taif University, P.O. 888, Taif (Saudi Arabia); Physics Department, Faculty of Science, Zagazig University, P.O. 44519, Zagazig (Egypt)

2015-08-30

Highlights: • A home-built plasma immersion ion implantation system was tested in modifying surfaces. • Wettability modifications within the energy range 10 keV implantation are not investigated elsewhere, up to our knowledge. • The wettability of Mylar and Makrofol surface was enhanced by the dual effect of ion implantation and plasma treatment. • The improved wettability was found to depend on both surface roughness and chemistry. • The adhesive bonding and surface energy of the polymers are improved. - Abstract: Mylar and Makrofol polycarbonate polymers were irradiated by Ar ions in a plasma immersion ion implantation (PIII) system. The surface wettability of both polymers was investigated by employing the contact angle method. The measured contact angles were found to depend on the surface layer properties. Good wetting surfaces were found to depend not only on surface roughness but also on its chemistry that analyzed by Fourier transform infrared (FTIR) spectroscopy. Surfaces topography and roughness was investigated and correlated to their surface energy which studied with the aid of acid-base model for evaluating the improvement of surface wettability after irradiation. PIII improves polymers surface properties efficiently in a controllable way.

CO2 laser photo-induced decomposition of ammoniated ammonium ions

International Nuclear Information System (INIS)

Ikezoe, Yasumasa; Soga, Takesi; Suzuki, Kazuya; Moriyama, Noboru; Ohno, Shin-ichi

1995-01-01

Photo-induced decomposition of ammoniated (clustered) ammonium ions was studied using a CO 2 laser to excite vibrational levels of the cluster ion. A tandem mass spectrometer (TMS) was installed with two quadrupole mass filters, a corona discharge ionization chamber, and a series of einzel lenses. Cluster ions of NH 4 + ·nNH 3 with n=1-7 were formed in TMS, and found to decompose at the frequency of 1077 cm -1 to an extent in proportional to laser intensity. CO 2 laser between 925 and 1055 do not decompose the cluster ions with laser intensities examined. (author)

Stress-tolerant mutants induced by heavy-ion beams

International Nuclear Information System (INIS)

Abe, Tomoko; Yoshida, Shigeo; Bae, Chang-Hyu; Ozaki, Takuo

2000-01-01

Comparative study was made on mutagenesis in tobacco embryo induced by exposure to EMS (ethyl methane-sulfonate) ion beams during the fertilization cycle. Tobacco embryo cells immediately after pollination were exposed to heavy ion beam and the sensitivity to the irradiation was assessed in each developmental stage and compared with the effects of EMS, a chemical mutagen. Morphologically abnormality such as chlorophyll deficiency was used as a marker. A total of 17 salt-tolerant plants were selected from 3447 M 1 seeds. A cell line showed salt resistance. The cell growth and chlorophyll content were each two times higher than that of WT cells in the medium containing 154 mM NaCl. Seven strains of M 3 progeny of 17 salt-tolerant plants, showed strong resistance, but no salt tolerant progeny were obtained from Xanthi or Ne-ion irradiation. This shows that the sensitivity of plant embryo to this irradiation technique may vary among species. When exposed to 14 N ion beam for 24-108 hours after pollination, various morphological mutants appeared at 18% in M 1 progeny and herbicide tolerant and salt tolerant mutants were obtained. A strong Co-tolerant strain was obtained in two of 17 salt-tolerant strains and a total of 46 tolerant strains (0.2%) were obtained from 22,272 grains of M 1 seeds. In these tolerant strains, the absorption of Co was slightly decreased, but those of Mg and Mn were increased. Mutants induced with ion-beam irradiation have potential not only for practical use in the breeding of stress-tolerant plants but also for gene analysis that will surely facilitate the molecular understanding of the tolerance mechanisms. (M.N.)

Control of domain wall pinning by localised focused Ga + ion irradiation on Au capped NiFe nanowires

International Nuclear Information System (INIS)

Burn, D. M.; Atkinson, D.

2014-01-01

Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.

Collision-induced dissociation with Fourier transform mass spectrometry

International Nuclear Information System (INIS)

Cody, R.B.; Burnier, R.C.; Freiser, B.S.

1982-01-01

Collision-induced dissociations (CID) is demonstrated on a number of primary and secondary ions using a Nicolet prototype Fourier transform mass spectrometer (FT-MS). Like the triple quadrupole technique, CID using FT-MS is a relatively low energy and efficient process. The ability to study a wide range of ion-molecule reaction products is exemplified by results on proton-bound dimers and transition metal containing ionic species. Variation of collision energy by varying the RF irradiation level can provide information about product distributions as a function of energy as well as yield ion structural information. Like the triple quadrupole technique, no slits are employed and virtually all of the fragment ions formed by the CID process may be detected. Unlike all previous mass spectrometric techniques for studying CID, a tandem instrument is not required, and different experiments are performed by making software modifications rather than hardware modifications

Collision induced fragmentation of fast molecular ions in solids and gases

International Nuclear Information System (INIS)

Gemmell, D.S.

1979-01-01

A brief review is given of recent high resolution measurements on fragments arising from the collision-induced dissociation of fast (MeV) molecular ions. For solid targets, strong wake effects are observed. For gaseous targets, excited electronic states of the projectile ions play an important role. Measurements of this type provide useful information on the charge states of fast ions traversing matter. The experimental techniques show promise as a unique method for determining the geometrical structures of the molecular-ion projectiles. 41 references

Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

International Nuclear Information System (INIS)

Schoene, H.; Walsh, D.S.; Sexton, F.W.; Doyle, B.L.; Aurand, J.F.; Dodd, P.E.; Flores, R.S.; Wing, N.

1998-01-01

The entire current transient induced by single 12 MeV Carbon ions was measured at a 5GHz analog bandwidth. A focused ion micro-beam was used to acquire multiple single ion transients at multiple locations of a single CMOS transistor. The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations. Estimates are presented for the drift assisted funneling charge collection depth

Copper ion implantation of polycarbonate matrices: Morphological and structural properties

Energy Technology Data Exchange (ETDEWEB)

Resta, V., E-mail: vincenzo.resta@le.infn.it; Quarta, G.; Maruccio, L.; Calcagnile, L.

2014-07-15

The implantation of 1 MeV {sup 63}Cu{sup +} ions in polycarbonate (PC) matrices has been carried out in order to evaluate the morphological and structural modifications induced in the polymer as a function of the ion fluence in the range 5 × 10{sup 13} ions cm{sup −2} to 1 × 10{sup 17} ions cm{sup −2}. Atomic Force Microscopy analysis reveals a significant roughness increase of the polymer surface only for fluences higher than 5 × 10{sup 16} ions cm{sup −2} with the presence of hillock structures which surface density increases with increasing the ion fluence. X-ray Diffraction measurements of PC implanted with fluences in the range between 5 × 10{sup 15} at cm{sup −2} and 5 × 10{sup 16} at cm{sup −2} reveal an increase of the disorder inside the PC matrix, as a consequence of the damaging process induced by the ion irradiation. Evidences about the presence of exotic phase structures ascribed to both cubic Cu{sub 2}O and cubic Cu have been found.

Ion irradiated graphite exposed to fusion-relevant deuterium plasma

International Nuclear Information System (INIS)

Deslandes, Alec; Guenette, Mathew C.; Corr, Cormac S.; Karatchevtseva, Inna; Thomsen, Lars; Ionescu, Mihail; Lumpkin, Gregory R.; Riley, Daniel P.

2014-01-01

Graphite samples were irradiated with 5 MeV carbon ions to simulate the damage caused by collision cascades from neutron irradiation in a fusion environment. The ion irradiated graphite samples were then exposed to a deuterium plasma in the linear plasma device, MAGPIE, for a total ion fluence of ∼1 × 10 24 ions m −2 . Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopy were used to characterize modifications to the graphitic structure. Ion irradiation was observed to decrease the graphitic content and induce disorder in the graphite. Subsequent plasma exposure decreased the graphitic content further. Structural and surface chemistry changes were observed to be greatest for the sample irradiated with the greatest fluence of MeV ions. D retention was measured using elastic recoil detection analysis and showed that ion irradiation increased the amount of retained deuterium in graphite by a factor of four

Characterization of ion-beam mixed multilayers via grazing x-ray reflectometry

International Nuclear Information System (INIS)

Le Boite, M.G.; Traverse, A.; Nevot, L.; Pardo, B.; Corno, J.

1988-01-01

The grazing x-ray reflectrometry technique was used as a way to study modifications in metallic multilayers induced by ion-beam irradiation. Due to the high sensitivity of the technique, short-range atomic displacements of an atom A in a layer B can be detected so that the first stages of ion-beam mixing can be investigated. The rate of mixing is measured and the compound A/sub 1-//sub x/B/sub x/ formed at the layers' interfaces is characterized

Phenomenological understanding of dewetting and embedding of noble metal nanoparticles in thin films induced by ion irradiation