Ion beam induced luminescence of germano-silicate optical fiber preform

International Nuclear Information System (INIS)

Jung, Hyunkyu; Kim, Jongyeol; Lee, Namho; Kim, Youngwoong; Han, Wontaek; Markovic, Nikola; Jaksic, Milko

2014-01-01

When an optical fiber is exposed to radiation, the attenuation (RIA, Radiation Induced Attenuation) in the optical fiber (OF) is increased because of the color centers which deteriorate the transmission property and generate the absorption loss. In order to understand the radiation induced defect, Ion Beam induced luminescence (IBIL) was introduced to investigate it. IBIL technique is to analyze IR/VIS/UV luminescence related to ion beam interaction with outer shell electrons involved in chemical bonds and structure defects of target atoms. So IBIL is sensitive to its chemical composition and has been used in analysis of material characterization, geological samples and cultural heritage objects. In silica material, four O atoms are surrounding one Si atom in tetrahedral coordination. In this study, the influence of Copper (Cu) and Cerium (Ce) dopants to germano silica core optical fibers were investigated under proton irradiation at RBI using Ion Beam induced luminescence (IBIL) method. To understand the radiation induced defect of optical fibers, IBIL were tested to a germano-silica core fiber under 2 MeV proton irradiation. Although a Cu or Ce dopant was not detected by IBIL technique, the relation between the amount of radiation and luminescence can be established. This experiment showed a potential technique of studying the effects and behavior of additive elements for silica core fiber. To increase the radiation resistance of optical fibers, further investigations are needed, i. e. the proper additives and its contents and an interaction mechanism between Ge-related defects and additives

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

Ion beam analysis fundamentals and applications

CERN Document Server

Nastasi, Michael; Wang, Yongqiang

2015-01-01

Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization.The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nucle

A proposal for study of ion-beam induced chemical reactions using JAERI tandem accelerator

International Nuclear Information System (INIS)

1985-11-01

Problems in ion-beam induced chemical reactions using JAERI Tandem Accelerator were discussed. Research philosophy, some proposed experiments which are based on measurements during ion-beam bombardment, and main features of the experimental apparatus are briefly described in this report. (author)

Surrey Ion Beam Centre: the EPSRC MRF for ion beam applications - 01002

International Nuclear Information System (INIS)

Webb, R.P.

2016-01-01

The SIBC (Surrey Ion Beam Centre) is an element of the Virtual Ion Beam Centre that coordinates 3 U.K. experimental facilities: SIBC (University of Surrey) for implantation and ion beam applications, Miami and MEIS facility (University of Huddersfield) and gamma ray and neutron irradiation emulation facility (University of Manchester). The SIBC works actively with industry, developing bespoke processes and services, particularly for the photonics industry and provides ion beam facilities to about 20 companies across the world. It operates a stringent quality control program and is one of the few ion beam laboratories in the world to operate under ISO 9001 certification. The equipment of SIBC is presented and some applications of ion beam analysis concerning the identification of gunshot residues, the determination of the origin of a painting, the analysis of proteins are described. Different techniques such as PIXE (Particle Induced X-ray Emission), RBS (Rutherford Backscattering Spectroscopy), NRA (Nuclear Reaction Analysis), SIMS (Secondary Ion Mass Spectrometry) are also explained in the slides of the presentation that have been added at the end of the paper

Ion beam induced luminescence characterisation of CVD diamond films

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A.A.; Gonon, P.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

Ion beam induced luminescence characterisation of CVD diamond films

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A A; Gonon, P; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

Time resolved ion beam induced charge collection

International Nuclear Information System (INIS)

Sexton W, Frederick; Walsh S, David; Doyle L, Barney; Dodd E, Paul

2000-01-01

Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a -.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients

Time resolved ion beam induced charge collection

Energy Technology Data Exchange (ETDEWEB)

SEXTON,FREDERICK W.; WALSH,DAVID S.; DOYLE,BARNEY L.; DODD,PAUL E.

2000-04-01

Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a {minus}.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients.

Electron backscatter diffraction studies of focused ion beam induced phase transformation in cobalt

Energy Technology Data Exchange (ETDEWEB)

Jones, H.G., E-mail: helen.jones@npl.co.uk [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Day, A.P. [Aunt Daisy Scientific Ltd, Claremont House, High St, Lydney GL15 5DX (United Kingdom); Cox, D.C. [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)

2016-10-15

A focused ion beam microscope was used to induce cubic to hexagonal phase transformation in a cobalt alloy, of similar composition to that of the binder phase in a hardmetal, in a controlled manner at 0°, 45° and 80° ion incident angles. The cobalt had an average grain size of ~ 20 μm, allowing multiple orientations to be studied, exposed to a range of doses between 6 × 10{sup 7} and 2 × 10{sup 10} ions/μm{sup 2}. Electron backscatter diffraction (EBSD) was used to determine the original and induced phase orientations, and area fractions, before and after the ion beam exposure. On average, less phase transformation was observed at higher incident angles and after lower ion doses. However there was an orientation effect where grains with an orientation close to (111) planes were most susceptible to phase transformation, and (101) the least, where grains partially and fully transformed at varying ion doses. - Highlights: •Ion-induced phase change in FCC cobalt was observed at multiple incidence angles. •EBSD was used to study the relationship between grain orientation and transformation. •Custom software analysed ion dose and phase change with respect to grain orientation. •A predictive capability of ion-induced phase change in cobalt was enabled.

Intense heavy ion beam-induced effects in carbon-based stripper foils

Energy Technology Data Exchange (ETDEWEB)

Kupka, Katharina

2016-08-15

Amorphous carbon or carbon-based stripper foils are commonly applied in accelerator technology for electron stripping of ions. At the planned facility for antiproton and ion research (FAIR) at the Helmholtzzentrum fuer Schwerionenforschung (GSI), Darmstadt, thin carbon stripper foils provide an option for directly delivering ions of intermediate charge states to the heavy ion synchrotron, SIS 18, in order to mitigate space charge limitations during high-intensity operation. In case of desired high end-energies in the synchrotron, a second stripping process by a thicker carbon foil provides ions of higher charge states for injection into the SIS18. High beam intensities and a pulsed beam structure as foreseen at FAIR pose new challenges to the stripper foils which experience enhanced degradation by radiation damage, thermal effects, and stress waves. In order to ensure reliable accelerator operation, radiation-hard stripper foils are required. This thesis aims to a better understanding of processes leading to degradation of carbon-based thin foils. Special focus is placed on ion-beam induced structure and physical property changes and on the influence of different beam parameters. Irradiation experiments were performed at the M3-beamline of the universal linear accelerator (UNILAC) at GSI, using swift heavy ion beams with different pulse lengths and repetition rates. Tested carbon foils were standard amorphous carbon stripper foils produced by the GSI target laboratory, as well as commercial amorphous and diamond-like carbon foils and buckypaper foils. Microstructural changes were investigated with various methods such as optical microscopy, scanning electron microscopy (SEM), profilometry and chromatic aberration measurements. For the investigation of structural changes X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), in-situ Fourier-transform infrared spectroscopy (FTIR) and small angle X

Intense heavy ion beam-induced effects in carbon-based stripper foils

International Nuclear Information System (INIS)

Kupka, Katharina

2016-08-01

Amorphous carbon or carbon-based stripper foils are commonly applied in accelerator technology for electron stripping of ions. At the planned facility for antiproton and ion research (FAIR) at the Helmholtzzentrum fuer Schwerionenforschung (GSI), Darmstadt, thin carbon stripper foils provide an option for directly delivering ions of intermediate charge states to the heavy ion synchrotron, SIS 18, in order to mitigate space charge limitations during high-intensity operation. In case of desired high end-energies in the synchrotron, a second stripping process by a thicker carbon foil provides ions of higher charge states for injection into the SIS18. High beam intensities and a pulsed beam structure as foreseen at FAIR pose new challenges to the stripper foils which experience enhanced degradation by radiation damage, thermal effects, and stress waves. In order to ensure reliable accelerator operation, radiation-hard stripper foils are required. This thesis aims to a better understanding of processes leading to degradation of carbon-based thin foils. Special focus is placed on ion-beam induced structure and physical property changes and on the influence of different beam parameters. Irradiation experiments were performed at the M3-beamline of the universal linear accelerator (UNILAC) at GSI, using swift heavy ion beams with different pulse lengths and repetition rates. Tested carbon foils were standard amorphous carbon stripper foils produced by the GSI target laboratory, as well as commercial amorphous and diamond-like carbon foils and buckypaper foils. Microstructural changes were investigated with various methods such as optical microscopy, scanning electron microscopy (SEM), profilometry and chromatic aberration measurements. For the investigation of structural changes X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), in-situ Fourier-transform infrared spectroscopy (FTIR) and small angle X

Investigations on ion-beam induced desorption from cryogenic surfaces

International Nuclear Information System (INIS)

Maurer, Christoph

2017-01-01

pumps can be taken into account. This method can be extended to any desorption experiment employing the single shot method for measurement. Of special interest for the operation of the SIS100 at high intensities is the minimization of desorption from cryogenic surfaces. A previous examination of this topic found a breakdown of the familiar scaling of the desorption yield with the beam's energy loss for cryogenic targets. Further examination of this effect with the techniques described above is another goal of this thesis. Simultaneously, desorption measurements at room temperature for several other targets have been conducted. An unexpected result of these experiments is the influence of target surface properties, which was found to be very weak in comparison to previous results. The methods developed during this thesis, along with the results gained by their application, represent another step towards the comprehension of (heavy) ion beam induced desorption.

The status and new trends of ion beam induced charge technique

International Nuclear Information System (INIS)

Lu Rongrong; Qiu Huiyuan; Zhu Dezhang

2002-01-01

Ion beam induced charge technique (IBIC) with low beam current (fA level) and high efficiency is a new development of nuclear microscopy. It has been widely applied to the fields of semiconductor and microelectronic materials. The principle and the experimental method of the IBIC technique were described and reviewed its status and new trends were reviewed

Analysis of art objects by means of ion beam induced luminescence

International Nuclear Information System (INIS)

Quaranta, A; Dran, J C; Salomon, J; Pivin, J C; Vomiero, A; Tonezzer, M; Maggioni, G; Carturan, S; Mea, G Della

2006-01-01

The impact of energetic ions on solid samples gives rise to the emission of visible light owing to the electronic excitation of intrinsic defects or extrinsic impurities. The intensity and position of the emission features provide information on the nature of the luminescence centers and on their chemical environments. This makes ion beam induced luminescence (IBIL) a useful complement to other ion beam analyses, like PIXE, in the cultural heritage field in characterizing the composition and the provenience of art objects. In the present paper, IBIL measurements have been performed on inorganic pigments for underlying the complementary role played by IBIL in the analysis of artistic works. Some blue and red pigment has been presented as case study

Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

Energy Technology Data Exchange (ETDEWEB)

Steinbach, Tobias

2012-05-03

Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

International Nuclear Information System (INIS)

Schoene, H.; Walsh, D.S.; Sexton, F.W.; Doyle, B.L.; Aurand, J.F.; Dodd, P.E.; Flores, R.S.; Wing, N.

1998-01-01

The entire current transient induced by single 12 MeV Carbon ions was measured at a 5GHz analog bandwidth. A focused ion micro-beam was used to acquire multiple single ion transients at multiple locations of a single CMOS transistor. The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations. Estimates are presented for the drift assisted funneling charge collection depth

Mutation induction by ion beams in arabidopsis

International Nuclear Information System (INIS)

Tanaka, Atsushi

1999-01-01

An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M 1 lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by γirradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and γ-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

Mutation induction by ion beams in arabidopsis

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1999-07-01

An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M{sub 1} lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by {gamma}irradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and {gamma}-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

High energy Xe{sup +} ion beam induced ripple structures on silicon

Energy Technology Data Exchange (ETDEWEB)

Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

2008-07-01

Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

Cooling of molecular ion beams

International Nuclear Information System (INIS)

Wolf, A.; Krohn, S.; Kreckel, H.; Lammich, L.; Lange, M.; Strasser, D.; Grieser, M.; Schwalm, D.; Zajfman, D.

2004-01-01

An overview of the use of stored ion beams and phase space cooling (electron cooling) is given for the field of molecular physics. Emphasis is given to interactions between molecular ions and electrons studied in the electron cooler: dissociative recombination and, for internally excited molecular ions, electron-induced ro-vibrational cooling. Diagnostic methods for the transverse ion beam properties and for the internal excitation of the molecular ions are discussed, and results for phase space cooling and internal (vibrational) cooling are presented for hydrogen molecular ions

Underling modification in ion beam induced Si wafers

International Nuclear Information System (INIS)

Hazra, S.; Chini, T.K.; Sanyal, M.K.; Grenzer, J.; Pietsch, U.

2005-01-01

Subsurface (amorphous-crystalline interface) structure of keV ion beam modified Si(001) wafers was studied for the first time using non-destructive technique and compared with that of the top one. Ion-beam modifications of the Si samples were done using state-of-art high-current ion implanter facility at Saha Institute of Nuclear Physics by changing energy, dose and angle of incidence of the Ar + ion beam. To bring out the underlying modification depth-resolved x-ray grazing incidence diffraction has been carried out using synchrotron radiation facility, while the structure of the top surface was studied through atomic force microscopy

Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching

International Nuclear Information System (INIS)

Singh, R.; Fonash, S.J.; Ashok, S.; Caplan, P.; Shappirio, J.; Hage-Ali, M.; Ponpon, J.

1983-01-01

A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures

DNA damage and chromosome aberration induced by heavy-ion beams

International Nuclear Information System (INIS)

Takakura, Kahoru; Funada, Aya; Aoki, Mizuho; Furusawa, Yoshiya

2003-01-01

The aim of this study is to clarify the relation between cell death and chromosomal aberration in cultured human cells (human salivary gland (HSG) tumor cells and GM05389 human normal fibroblasts) irradiated with heavy ion beams on the basis of linear energy transfer (LET) values. The LET dependences of cell death were observed for the both cells by the method of colony assay. The LET dependences of the chromosomal aberrations, breaks and gaps, isochromatid breaks and exchanges were also observed for the both cells using the premature chromosome condensation (PCC) method. From these results it is suggested that exchange formation is essential for the cell death caused by heavy ion beam irradiation. It is suspected that the densely ionizing track structure of hight LET heavy ions inhibits the effective repair in the chromatid breaks and isochromatid breaks and finally induce much exchange in the cells, which should be essential cause of cell death. (author)

Monte Carlo modeling of ion beam induced secondary electrons

Energy Technology Data Exchange (ETDEWEB)

Huh, U., E-mail: uhuh@vols.utk.edu [Biochemistry & Cellular & Molecular Biology, University of Tennessee, Knoxville, TN 37996-0840 (United States); Cho, W. [Electrical and Computer Engineering, University of Tennessee, Knoxville, TN 37996-2100 (United States); Joy, D.C. [Biochemistry & Cellular & Molecular Biology, University of Tennessee, Knoxville, TN 37996-0840 (United States); Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2016-09-15

Ion induced secondary electrons (iSE) can produce high-resolution images ranging from a few eV to 100 keV over a wide range of materials. The interpretation of such images requires knowledge of the secondary electron yields (iSE δ) for each of the elements and materials present and as a function of the incident beam energy. Experimental data for helium ions are currently limited to 40 elements and six compounds while other ions are not well represented. To overcome this limitation, we propose a simple procedure based on the comprehensive work of Berger et al. Here we show that between the energy range of 10–100 keV the Berger et al. data for elements and compounds can be accurately represented by a single universal curve. The agreement between the limited experimental data that is available and the predictive model is good, and has been found to provide reliable yield data for a wide range of elements and compounds. - Highlights: • The Universal ASTAR Yield Curve was derived from data recently published by NIST. • IONiSE incorporated with the Curve will predict iSE yield for elements and compounds. • This approach can also handle other ion beams by changing basic scattering profile.

The influence of beam divergence on ion-beam induced surface patterns

International Nuclear Information System (INIS)

Kree, R.; Yasseri, T.; Hartmann, A.K.

2009-01-01

We present a continuum theory and a Monte Carlo model of self-organized surface pattern formation by ion-beam sputtering including effects of beam profiles. Recently, it has turned out that such secondary ion-beam parameters may have a strong influence on the types of emerging patterns. We first discuss several cases, for which beam profiles lead to random parameters in the theory of pattern formation. Subsequently we study the evolution of the averaged height profile in continuum theory and find that the typical Bradley-Harper scenario of dependence of ripple patterns on the angle of incidence can be changed qualitatively. Beam profiles are implemented in Monte Carlo simulations, where we find generic effects on pattern formation. Finally, we demonstrate that realistic beam profiles, taken from experiments, may lead to qualitative changes of surface patterns.

Ion beam induced effects on the ferromagnetism in Pd nanoparticles

International Nuclear Information System (INIS)

Kulriya, P. K.; Mehta, B. R.; Agarwal, D. C.; Agarwal, Kanika; Kumar, Praveen; Shivaprasad, S. M.; Avasthi, D. K.

2012-01-01

Present study demonstrates the role of metal-insulator interface and ion irradiation induced defects on the ferromagnetic properties of the non-magnetic materials. Magnetic properties of the Pd nanoparticles(NPs) embedded in the a-silica matrix synthesized using atom beam sputtering technique, were determined using SQUID magnetometry measurements which showed that ferromagnetic response of Pd increased by 3.5 times on swift heavy ion(SHI) irradiation. The ferromagnetic behavior of the as-deposited Pd NPs is due to strain induced by the surrounding matrix and modification in the electronic structure at the Pd-silica interface as revealed by insitu XRD and XPS investigations, respectively. The defects created by the SHI bombardment are responsible for enhancement of the magnetization in the Pd NPs.

Proteome Changes in Maize Embryo (Zea mays L) Induced by Ion Beam Implantation Treatment

International Nuclear Information System (INIS)

Li Yongliang; Qin Guangyong; Huo Yuping; Tian Shuangqi; Tang Jihua

2009-01-01

Low energy ion beam implantation was applied to the maize (Zea mays L) embryo proteome using two-dimensional gel electrophoresis. Protein profile analysis detected more than 1100 protein spots, 72 of which were determined to be expressed differently in the treated and control (not exposed to ion beam implantation) embryos. Of the 72 protein spots, 53 were up-regulated in the control and 19 were more abundantly expressed in the ion beam-treated embryos. The spots of up- or down-regulated proteins were identified by matrix assisted laser desorption/ionization-time of flight mass spectrometry (MALDI-TOF-MS). Among the identified proteins, 11 were up-regulated in the treated embryos. Four of these up-regulated proteins were antioxidant molecules, three were related to stress response, two to sugar metabolism and two were associated with heat shock response. Of the five proteins up-regulated in the control embryos, three were functionally related to carbohydrate metabolism; the functions of the remaining two proteins were unknown. The data collected during this study indicate that treatment of maize embryos with low energy ion beam implantation induces changes in stress tolerance enzymes/proteins, possibly as a result of alterations in metabolism. (ion beam bioengineering)

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

Science.gov (United States)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L. D.

2012-02-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli ( E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

International Nuclear Information System (INIS)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L.D.

2012-01-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli (E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

Development of a new light collection and detection system optimized for ion beam induced fluorescence microscopy

International Nuclear Information System (INIS)

Vanga, Sudheer Kumar; Mi, Zhaohong; Koh, Long Cheng; Tao, Ye; Bettiol, Andrew A.; Watt, Frank

2015-01-01

Ion beam induced fluorescence microscopy is a new imaging technique which has the potential to achieve sub-50 nm spatial resolution fluorescence images. Currently the resolution of the technique has been limited to around 150 nm mainly because of inefficient collection and detection of emitted photons from the sample. To overcome this limitation, a new light collection system based on a custom made parabolic mirror is employed to enhance the fluorescence collection. The custom made mirror is designed so as to obtain both structural (scanning transmission ion microscopy) and ion beam induced fluorescence imaging simultaneously. The design and characterization of the parabolic mirror is discussed in detail

An effective method for detection and analysis of DNA damage induced by heavy-ion beams

International Nuclear Information System (INIS)

Kazama, Y.; Saito, H.; Fujiwara, M.; Matsuyama, T.; Hayashi, Y.; Ryuto, H.; Fukunishi, N.; Abe, T.

2007-01-01

We have developed an efficient system to detect and analyze DNA mutations induced by heavy-ion beams in Arabidopsis thaliana. In this system, a stable transgenic Arabidopsis line that constitutively expresses a yellow fluorescent protein (YFP) by a single-copy gene at a genomic locus was constructed and irradiated with heavy-ion beams. The YFP gene is a target of mutagenesis, and its loss of function or expression can easily be detected by the disappearance of YFP signals in planta under microscopy. With this system, a sup(12)Csup(6+)- induced mutant with single deletion and multiple base changes was isolated

Compensation of head-on beam-beam induced resonance driving terms and tune spread in the Relativistic Heavy Ion Collider

Directory of Open Access Journals (Sweden)

W. Fischer

2017-09-01

Full Text Available A head-on beam-beam compensation scheme was implemented for operation in the Relativistic Heavy Ion Collider (RHIC at Brookhaven National Laboratory [Phys. Rev. Lett. 115, 264801 (2015PRLTAO0031-900710.1103/PhysRevLett.115.264801]. The compensation consists of electron lenses for the reduction of the beam-beam induced tune spread, and a lattice for the minimization of beam-beam generated resonance driving terms. We describe the implementations of the lattice and electron lenses, and report on measurements of lattice properties and the effect of the electron lenses on the hadron beam.

Surface modification of poly(tetrafluoroethylene) films by low energy Ar+ ion-beam activation and UV-induced graft copolymerization

International Nuclear Information System (INIS)

Zhang Yan; Huan, A.C.H.; Tan, K.L.; Kang, E.T.

2000-01-01

Surface modification of poly(tetrafluoroethylene) (PTFE) films by Ar + ion-beam irradiation with varying ion energy and ion dose was carried out. The changes in surface composition of the irradiated PTFE films were characterized, both in situ and after exposure to air, by X-ray photoelectron spectroscopy (XPS). The possible mechanisms of chemical reaction induced by the incident ion beam on the surface of PTFE film included defluorination, chain scission and cross-linking, as indicated by the presence of the characteristic peak components associated with the - - -CF 3 , - - -CF, and C(CF 2 ) 4 species in the C 1s core-level spectra, the decrease in surface [F]/[C] ratio, and the increase in surface micro-hardness of the Ar + ion-beam-treated PTFE films. Furthermore, the free radicals generated by the ion-beam could react with oxygen in the air to give rise to oxidized carbon species, such as the peroxides, on the PTFE surface. Thus, after exposure to air, the Ar + ion-beam-pretreated PTFE films were susceptible to further surface modification by UV-induced graft copolymerization with a vinyl monomer, such as acrylamide (AAm). The graft concentrations were deduced from the XPS-derived surface stoichiometries. The Ar + ion energy and the ion dose affected not only the surface composition of the treated films but also the graft copolymerization efficiency of the corresponding pretreated films

Metal negative ion beam extraction from a radio frequency ion source

Energy Technology Data Exchange (ETDEWEB)

Kanda, S.; Yamada, N.; Kasuya, T.; Romero, C. F. P.; Wada, M.

2015-04-08

A metal ion source of magnetron magnetic field geometry has been designed and operated with a Cu hollow target. Radio frequency power at 13.56 MHz is directly supplied to the hollow target to maintain plasma discharge and induce self-bias to the target for sputtering. The extraction of positive and negative Cu ion beams have been tested. The ion beam current ratio of Cu{sup +} to Ar{sup +} has reached up to 140% when Ar was used as the discharge support gas. Cu{sup −} ion beam was observed at 50 W RF discharge power and at a higher Ar gas pressure in the ion source. Improvement of poor RF power matching and suppression of electron current is indispensable for a stable Cu{sup −} ion beam production from the source.

Quantitative assessment of the ion-beam irradiation induced direct damage of nucleic acid bases through FTIR spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Huang, Qing, E-mail: huangq@ipp.ac.cn [Key Laboratory of Ion Beam Bio-engineering, Institute of Technical Biology and Agriculture Engineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences (China); University of Science and Technology of China, Hefei 230029, Anhui (China); Su, Xi; Yao, Guohua; Lu, Yilin; Ke, Zhigang; Liu, Jinghua; Wu, Yuejin; Yu, Zengliang [Key Laboratory of Ion Beam Bio-engineering, Institute of Technical Biology and Agriculture Engineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences (China)

2014-07-01

Energetic particles exist ubiquitously in nature, and when they hit DNA molecules in organisms, they may induce critical biological effects such as mutation. It is however still a challenge to measure directly and quantitatively the damage imposed by the energetic ions on target DNA molecules. In this work we attempted to employ Fourier transformation infrared (FTIR) spectroscopy to assess the ion-induced direct damage of four nucleic acid bases, namely, thymine (T), cytosine (C), guanine (G), and adenine (A), which are the building blocks of DNA molecules. The samples were prepared as thin films, irradiated by argon ion-beams at raised ion fluences, and in the meantime measured by FTIR spectroscopy for the damage in a quasi-in-situ manner. It was found that the low-energy ion-beam induced radiosensitivity of the four bases shows the sequence G > T > C > A, wherein the possible mechanism was also discussed.

Carbon-ion beam irradiation kills X-ray-resistant p53-null cancer cells by inducing mitotic catastrophe.

Directory of Open Access Journals (Sweden)

Napapat Amornwichet

Full Text Available BACKGROUND AND PURPOSE: To understand the mechanisms involved in the strong killing effect of carbon-ion beam irradiation on cancer cells with TP53 tumor suppressor gene deficiencies. MATERIALS AND METHODS: DNA damage responses after carbon-ion beam or X-ray irradiation in isogenic HCT116 colorectal cancer cell lines with and without TP53 (p53+/+ and p53-/-, respectively were analyzed as follows: cell survival by clonogenic assay, cell death modes by morphologic observation of DAPI-stained nuclei, DNA double-strand breaks (DSBs by immunostaining of phosphorylated H2AX (γH2AX, and cell cycle by flow cytometry and immunostaining of Ser10-phosphorylated histone H3. RESULTS: The p53-/- cells were more resistant than the p53+/+ cells to X-ray irradiation, while the sensitivities of the p53+/+ and p53-/- cells to carbon-ion beam irradiation were comparable. X-ray and carbon-ion beam irradiations predominantly induced apoptosis of the p53+/+ cells but not the p53-/- cells. In the p53-/- cells, carbon-ion beam irradiation, but not X-ray irradiation, markedly induced mitotic catastrophe that was associated with premature mitotic entry with harboring long-retained DSBs at 24 h post-irradiation. CONCLUSIONS: Efficient induction of mitotic catastrophe in apoptosis-resistant p53-deficient cells implies a strong cancer cell-killing effect of carbon-ion beam irradiation that is independent of the p53 status, suggesting its biological advantage over X-ray treatment.

Ion beam induced charge and cathodoluminescence imaging of response uniformity of CVD diamond radiation detectors

CERN Document Server

Sellin, P J; Galbiati, A; Maghrabi, M; Townsend, P D

2002-01-01

The uniformity of response of CVD diamond radiation detectors produced from high quality diamond film, with crystallite dimensions of >100 mu m, has been studied using ion beam induced charge imaging. A micron-resolution scanning alpha particle beam was used to produce maps of pulse height response across the device. The detectors were fabricated with a single-sided coplanar electrode geometry to maximise their sensitivity to the surface region of the diamond film where the diamond crystallites are highly ordered. High resolution ion beam induced charge images of single crystallites were acquired that demonstrate variations in intra-crystallite charge transport and the termination of charge transport at the crystallite boundaries. Cathodoluminescence imaging of the same crystallites shows an inverse correlation between the density of radiative centres and regions of good charge transport.

Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

International Nuclear Information System (INIS)

Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.

2007-01-01

Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density

Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

Energy Technology Data Exchange (ETDEWEB)

Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wongkham, W. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Inthanon, K. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Anuntalabhochai, S. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2013-06-15

Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

International Nuclear Information System (INIS)

Yu, L.D.; Wongkham, W.; Prakrajang, K.; Sangwijit, K.; Inthanon, K.; Thongkumkoon, P.; Wanichapichart, P.; Anuntalabhochai, S.

2013-01-01

Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

Proteome Changes in Maize Embryo (Zea mays L) Induced by Ion Beam Implantation Treatment

Science.gov (United States)

Li, Yongliang; Tang, Jihua; Qin, Guangyong; Huo, Yuping; Tian, Shuangqi

2009-08-01

Low energy ion beam implantation was applied to the maize (Zea mays L) embryo proteome using two-dimensional gel electrophoresis. Protein profile analysis detected more than 1100 protein spots, 72 of which were determined to be expressed differently in the treated and control (not exposed to ion beam implantation) embryos. Of the 72 protein spots, 53 were up-regulated in the control and 19 were more abundantly expressed in the ion beam-treated embryos. The spots of up- or down-regulated proteins were identified by matrix assisted laser desorption/ionization-time of flight mass spectrometry (MALDI-TOF-MS). Among the identified proteins, 11 were up-regulated in the treated embryos. Four of these up-regulated proteins were antioxidant molecules, three were related to stress response, two to sugar metabolism and two were associated with heat shock response. Of the five proteins up-regulated in the control embryos, three were functionally related to carbohydrate metabolism; the functions of the remaining two proteins were unknown. The data collected during this study indicate that treatment of maize embryos with low energy ion beam implantation induces changes in stress tolerance enzymes/proteins, possibly as a result of alterations in metabolism.

Ion-beam plasma and propagation of intense compensated ion beams

Energy Technology Data Exchange (ETDEWEB)

Gabovich, M D [AN Ukrainskoj SSR, Kiev. Inst. Fiziki

1977-02-01

Discussed are the results of investigation of plasma properties received by neutralization of intense ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown that not only dynamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account in solving the problem of obtaining ''superdense'' compensated beams.

Ion-beam plasma and propagation of intense compensated ion beams

International Nuclear Information System (INIS)

Gabovich, M.D.

1977-01-01

Discussed are the results of investigation of plasma properties recieved by neutralization of intensive ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown, that not only dinamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account at solving the problem of obtaining ''superdense'' compensated beams

Mutation induction by ion beams in plants

International Nuclear Information System (INIS)

Tanaka, Atsushi

2001-01-01

The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

Mutation induction by ion beams in plants

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

2001-03-01

The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

Ion beam monitoring

International Nuclear Information System (INIS)

McKinney, C.R.

1980-01-01

An ion beam analyzer is specified, having an ion source for generating ions of a sample to be analyzed, means for extracting the sample ions, means for focusing the sample ions into a beam, separation means positioned along the ion beam for selectively deflecting species of ions, and means for detecting the selected species of ions. According to the specification, the analyzer further comprises (a) means for disabling at least a portion of the separation means, such that the ion beam from the source remains undeflected; (b) means located along the path of the undeflected ion beam for sensing the sample ions; and (c) enabling means responsive to the sensing means for automatically re-enabling the separation means when the sample ions reach a predetermined intensity level. (author)

Rotating light ion beam-plasma system in inertial confinement fusion

International Nuclear Information System (INIS)

Murakami, H.; Okada, T.

1997-01-01

The stabilizing mechanism of filamentation instability in light ion beam propagation is studied numerically by using a particle-in-cell code. Rotating light ion beam scheme has been proposed for the light ion beam propagation. The filamentation instability is stabilized by the external magnetic field which is induced by the rotating light ion beams. From a dispersion relation, linear growth rates of filamentation instabilities are obtained in a light ion beam-plasma system with an external magnetic field. The theory and simulation comparisons illustrate the results. (author)

Temperature-dependent ion beam mixing

International Nuclear Information System (INIS)

Rehn, L.E.; Alexander, D.E.

1993-08-01

Recent work on enhanced interdiffusion rates during ion-beam mixing at elevated temperatures is reviewed. As discussed previously, expected increase in ion-beam mixing rates due to 'radiation-enhanced diffusion' (RED), i.e. the free migration of isolated vacancy and interstitial defects, is well documented in single-crystal specimens in the range of 0.4 to 0.6 of absolute melting temperature. In contrast, the increase often observed at somewhat lower temperatures during ion-beam mixing of polycrystalline specimens is not well understood. However, sufficient evidence is available to show that this increase reflects intracascade enhancement of a thermally-activated process that also occurs without irradiation. Recent evidence is presented which suggests that this process is Diffusion-induced Grain-Boundary Migration (DIGM). An important complementary conclusion is that because ion-beam mixing in single-crystal specimens exhibits no significant temperature dependence below that of RED, models that invoke only irradiation-specific phenomena, e.g., cascade-overlap, thermal-spikes, or liquid-diffusion, and hence which predict no difference in mixing behavior between single- or poly-crystalline specimens, cannot account for the existing results

Ion beam modification of solids ion-solid interaction and radiation damage

CERN Document Server

Wesch, Werner

2016-01-01

This book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for ins...

Development of an energy analyzer as diagnostic of beam-generated plasma in negative ion beam systems

Science.gov (United States)

Sartori, E.; Carozzi, G.; Veltri, P.; Spolaore, M.; Cavazzana, R.; Antoni, V.; Serianni, G.

2017-08-01

The measurement of the plasma potential and the energy spectrum of secondary particles in the drift region of a negative ion beam offers an insight into beam-induced plasma formation and beam transport in low pressure gasses. Plasma formation in negative-ion beam systems, and the characteristics of such a plasma are of interest especially for space charge compensation, plasma formation in neutralizers, and the development of improved schemes of beam-induced plasma neutralisers for future fusion devices. All these aspects have direct implications in the ITER Heating Neutral Beam and the operation of the prototypes, SPIDER and MITICA, and also have important role in the conceptual studies for NBI systems of DEMO, while at present experimental data are lacking. In this paper we present the design and development of an ion energy analyzer to measure the beam plasma formation and space charge compensation in negative ion beams. The diagnostic is a retarding field energy analyzer (RFEA), and will measure the transverse energy spectra of plasma molecular ions. The calculations that supported the design are reported, and a method to interpret the measurements in negative ion beam systems is also proposed. Finally, the experimental results of the first test in a magnetron plasma are presented.

Status of radioactive ion beams at the HRIBF

CERN Document Server

Stracener, D W

2003-01-01

Radioactive Ion Beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF) are produced using the isotope separation on-line technique and are subsequently accelerated up to a few MeV per nucleon for use in nuclear physics experiments. The first RIB experiments at the HRIBF were completed at the end of 1998 using sup 1 sup 7 F beams. Since then other proton-rich ion beams have been developed and a large number of neutron-rich ion beams are now available. The neutron-rich radioactive nuclei are produced via proton-induced fission of uranium in a low-density matrix of uranium carbide. Recently developed RIBs include sup 2 sup 5 Al from a silicon carbide target and isobarically pure beams of neutron-rich Ge, Sn, Br and I isotopes from a uranium carbide target.

Materials science education: ion beam modification and analysis of materials

Science.gov (United States)

Zimmerman, Robert; Muntele, Claudiu; Ila, Daryush

2012-08-01

The Center for Irradiation of Materials (CIM) at Alabama A&M University (http://cim.aamu.edu) was established in 1990 to serve the University in its research, education and services to the need of the local community and industry. CIM irradiation capabilities are oriented around two tandem-type ion accelerators with seven beam lines providing high-resolution Rutherford backscattering spectrometry, MeV focus ion beam, high-energy ion implantation and irradiation damage studies, particle-induced X-ray emission, particle-induced gamma emission and ion-induced nuclear reaction analysis in addition to fully automated ion channeling. One of the two tandem ion accelerators is designed to produce high-flux ion beam for MeV ion implantation and ion irradiation damage studies. The facility is well equipped with a variety of surface analysis systems, such as SEM, ESCA, as well as scanning micro-Raman analysis, UV-VIS Spectrometry, luminescence spectroscopy, thermal conductivity, electrical conductivity, IV/CV systems, mechanical test systems, AFM, FTIR, voltammetry analysis as well as low-energy implanters, ion beam-assisted deposition and MBE systems. In this presentation, we will demonstrate how the facility is used in material science education, as well as providing services to university, government and industry researches.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2014-05-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

2014-01-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

Nucleation mechanisms in high energy ion beam induced dewetting

Energy Technology Data Exchange (ETDEWEB)

Haag, Michael; Garmatter, Daniel; Ferhati, Redi; Amirthapandian, Sankarakumar; Bolse, Wolfgang [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart (Germany)

2011-07-01

Solid coatings, when heated above their melting points, often break up by forming small round holes, which then grow, coalesce and finally turn the initially contiguous film into a pattern of isolated droplets. Such dewetting has been intensively studied using thin polymer films on Si. Three different hole nucleation mechanisms were discovered: homogeneous (spontaneous) nucleation, heterogeneous nucleation at defects, and spinodal dewetting by self-amplifying capillary waves. We have recently found that swift heavy ion (SHI) irradiation of thin oxide films on Si results in similar dewetting patterns, even though the films were kept far below their melting points. Using our new in-situ SEM at the UNILAC accelerator of GSI, we were now able to identify the mechanisms behind this SHI induced dewetting phenomenon. By varying the film thickness and introducing defects at the interface, we can directly address the hole nucleation processes. Besides homogeneous and heterogeneous nucleation, we also found a process, which very much resembles the spinodal mechanism found for liquid polymers, although in the present case the instable wavy surface is not generated by capillary waves, but by ion beam induced stresses.

Nanostructures by ion beams

Science.gov (United States)

Schmidt, B.

Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

Beam-Loss Induced Pressure Rise of LHC Collimator Materials Irradiated with 158 GeV/u $In^{49+}$ Ions at the CERN SPS

CERN Document Server

Mahner, Edgar; Hansen, Jan; Page, Eric; Vincke, Helmut H

2004-01-01

During heavy ion operation, large pressure rises, up to a few orders of magnitude, were observed at CERN, GSI, and BNL. The dynamic pressure rises were triggered by lost beam ions that impacted onto the vacuum chamber walls and desorbed about 1044 to 107 molecules per ion. The deterioration of the dynamic vacuum conditions can enhance charge-exchange beam losses and can lead to beam instabilities or even to beam abortion triggered by vacuum interlocks. Consequently, a dedicated measure-ment of heavy-ion induced molecular desorption in the GeV/u energy range is important for LHC ion operation. In 2003, a desorption experiment was installed at the SPS to measure the beam-loss induced pressure rise of potential LHC collimator materials. Samples of bare graphite, sputter coated (Cu, TiZrV) graphite, and 316 LN stainless steel, were irradiated under grazing angle with 158 GeV/u indium ions. After a description of the new experimental set-up, the results of the pressure rise measurements are presented, and the deri...

Cell killing and chromosomal aberration induced by heavy-ion beams in cultured human tumor cells

International Nuclear Information System (INIS)

Takakura, K.; Funada, A.; Mohri, M.; Lee, R.; Aoki, M.; Furusawa, Y.; Gotoh, E.

2003-01-01

Full text: To clarify the relation between cell death and chromosomal aberration in cultured human tumor cells irradaited with heavy-ion beams. The analyses were carried out on the basis of the linear energy transfer (LET) values of heavy ion beams as radiation source. Exponentially growing human tumor cells, Human Salivary Gland Tumor cells (HSG cells), were irradiated with various high energy heavy ions, such as 13 keV/micrometer carbon (C) ions as low LET charged particle radiation source, 120 keV/ micrometer carbon (C) ions and 440 keV/micrometer iron (Fe) ions as high LET charged particle radiation sources.The cell death was analysed by the colony formation method, and the chromosomal aberration and its repairing kinetics was analysed by prematurely chromosome condensation method (PCC method) using calyculin A. Chromatid-type breaks, isochromatid breaks and exchanges were scored for the samples from the cells keeping with various incubation time after irradiation. The LET dependence of the cell death was similar to that of the chromosome exchange formation after 12 hours incubation. A maximum peak was around 120 keV/micrometer. However it was not similar to the LET dependence of isochromatid breaks or chromatid breaks after 12 hours incubation. These results suggest that the exchanges formed in chromosome after irradiation should be one of essential causes to lead the cell death. The different quality of induced chromosome damage between high-LET and low-LET radiation was also shown. About 89 % and 88 % chromatid breaks induced by X rays and 13 keV/micrometer C ions were rejoined within 12 hours of post-irradiation, though only 71% and 58 % of chromatid breaks induced by 120 keV/micrometer C ions and 440 keV/micrometer Fe ions were rejoined within 12 hours of post-irradiation

High harmonic ion cyclotron heating in DIII-D: Beam ion absorption and sawtooth stabilization

International Nuclear Information System (INIS)

Heidbrink, W.W.; Fredrickson, E.D.; Mau, T.K.; Petty, C.C.; Pinsker, R.I.; Porkolab, M.; Rice, B.W.

1999-01-01

Combined neutral beam injection and fast wave heating at the fourth cyclotron harmonic produce an energetic deuterium beam ion tail in the DIII-D tokamak. When the concentration of thermal hydrogen exceeds ∼ 5%, the beam ion absorption is suppressed in favour of second harmonic hydrogen absorption. As theoretically expected, the beam absorption increases with beam ion gyro-radius; also, central absorption at the fifth harmonic is weaker than central absorption at the fourth harmonic. For central heating at the fourth harmonic, an energetic, perpendicular, beam population forms inside the q = 1 surface. The beam ion tail transiently stabilizes the sawtooth instability but destabilizes toroidicity induced Alfven eigenmodes (TAEs). Saturation of the central heating correlates with the onset of the TAEs. Continued expansion of the q = 1 radius eventually precipitates a sawtooth crash; complete magnetic reconnection is observed. (author)

Xe ion beam induced rippled structures on differently oriented single-crystalline Si surfaces

Energy Technology Data Exchange (ETDEWEB)

Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan [Forschungszentrum Dresden-Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, PO Box 510119, 01314 Dresden (Germany); Biermanns, Andreas; Pietsch, Ullrich, E-mail: A.Hanisch@fzd.d [Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany)

2010-03-24

We report on Xe{sup +} induced ripple formation at medium energy on single-crystalline silicon surfaces of different orientations using substrates with an intentional miscut from the [0 0 1] direction and a [1 1 1] oriented wafer. The ion beam incidence angle with respect to the surface normal was kept fixed at 65{sup 0} and the ion beam projection was parallel or perpendicular to the [1 1 0] direction. By a combination of atomic force microscopy, x-ray diffraction and high-resolution transmission electron microscopy we found that the features of the surface and subsurface rippled structures such as ripple wavelength and amplitude and the degree of order do not depend on the surface orientation as assumed in recent models of pattern formation for semiconductor surfaces. (fast track communication)

Biological effect of penetration controlled irradiation with ion beams

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Atsushi; Shimizu, Takashi; Kikuchi, Masahiro; Kobayashi, Yasuhiko; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Yamashita, Takao

1997-03-01

To investigate the effect of local irradiation with ion beams on biological systems, technique for penetration controlled irradiation has been established. The range in a target was controlled by changing the distance from beam window in the atmosphere, and could be controlled linearly up to about 31 {mu}m in biological material. In addition, the effects of the penetration controlled irradiations with 1.5 MeV/u C and He ions were examined using tobacco pollen. The increased frequency of leaky pollen produced by ion beams suggests that the efficient pollen envelope damages would be induced at the range-end of ion beams. (author)

Ion Beam Propulsion Study

Science.gov (United States)

2008-01-01

The Ion Beam Propulsion Study was a joint high-level study between the Applied Physics Laboratory operated by NASA and ASRC Aerospace at Kennedy Space Center, Florida, and Berkeley Scientific, Berkeley, California. The results were promising and suggested that work should continue if future funding becomes available. The application of ion thrusters for spacecraft propulsion is limited to quite modest ion sources with similarly modest ion beam parameters because of the mass penalty associated with the ion source and its power supply system. Also, the ion source technology has not been able to provide very high-power ion beams. Small ion beam propulsion systems were used with considerable success. Ion propulsion systems brought into practice use an onboard ion source to form an energetic ion beam, typically Xe+ ions, as the propellant. Such systems were used for steering and correction of telecommunication satellites and as the main thruster for the Deep Space 1 demonstration mission. In recent years, "giant" ion sources were developed for the controlled-fusion research effort worldwide, with beam parameters many orders of magnitude greater than the tiny ones of conventional space thruster application. The advent of such huge ion beam sources and the need for advanced propulsion systems for exploration of the solar system suggest a fresh look at ion beam propulsion, now with the giant fusion sources in mind.

Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Z., E-mail: pscientific5@aec.org.sy [Scientific Service Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Ahmad, M. [IBA Laboratory, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Chemistry Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic)

2017-04-01

Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au

International Nuclear Information System (INIS)

Chee, See Wee; Kammler, Martin; Balasubramanian, Prabhu; Reuter, Mark C.; Hull, Robert; Ross, Frances M.

2013-01-01

We use focused beams of Ga + , Au + and Si ++ ions to induce local microstructural changes in single crystal silicon. The ions were delivered as single spot pulses into thin Si membranes that could subsequently be imaged and annealed in situ in a transmission electron microscope. For each ion, the focused ion beam implantation created an array of amorphous regions in the crystalline membrane. Annealing causes solid phase epitaxial regrowth to take place, but we show that the resulting microstructure depends on the ion species. For Ga + and Au + , precipitates remain after recrystallization, while for Si ++ , dislocation loops form around the periphery of each implanted spot. We attribute these loops to defects formed during solid phase epitaxial regrowth, with controlled placement of the loops possible. - Highlights: ► Ga + , Au + and Si ++ were implanted into thin membranes of Si. ► Samples were imaged and annealed in situ in a transmission electron microscope. ► Focused ion beam implantation created an array of amorphous spots. ► After recrystallization, precipitates form for Ga + and Au + , dislocation loops for Si ++ . ► Controlled placement of the dislocation loops possible

Applications of laser produced ion beams to nuclear analysis of materials

International Nuclear Information System (INIS)

Mima, K.; Azuma, H.; Fujita, K.; Yamazaki, A.; Okuda, C.; Ukyo, Y.; Kato, Y.; Arrabal, R. Gonzalez; Soldo, F.; Perlado, J. M.; Nishimura, H.; Nakai, S.

2012-01-01

Laser produced ion beams have unique characteristics which are ultra-short pulse, very low emittance, and variety of nuclear species. These characteristics could be used for analyzing various materials like low Z ion doped heavy metals or ceramics. Energies of laser produced ion beam extend from 0.1MeV to 100MeV. Therefore, various nuclear processes can be induced in the interactions of ion beams with samples. The ion beam driven nuclear analysis has been developed for many years by using various electrostatic accelerators. To explore the applicability of laser ion beam to the analysis of the Li ion battery, a proton beam with the diameter of ∼ 1.0 μm at Takasaki Ion Acceleration for Advanced Radiation Application (TIARA), JAEA was used. For the analysis, the PIGE (Particle-Induced Gamma Ray Emission) is used. The proton beam scans over Li battery electrode samples to diagnose Li density in the LiNi 0.85 Co 0.15 O 2 anode. As the results, PIGE images for Li area density distributions are obtained with the spatial resolution of better than 1.5μm FWHM. By the Li PIGE images, the depth dependence of de-intercalation levels of Li in the anode is obtained. By the POP experiments at TIARA, it is clarified that laser produced ion beam is appropriate for the Li ion battery analysis. 41.85.Lc, 41.75.Jv, 42.62.cf.

Ion desorption induced by charged particle beams: mechanisms and mass spectroscopy

International Nuclear Information System (INIS)

Silveira, E.F. da; Schweikert, E.A.

1988-01-01

Surface analysis, through desorption, induced by fast particles, is presented and discussed. The stopping of projectils is essentially made by collisions with the target electrons. The desorbed particles are generally emmited with kinetic energy from 0.1 to 20 eV. Mass, charge, velocity and emission angle give information about the surface components, its structure as well as beam-solid interaction processes. Time-of-flight mass spectroscopy of desorbed ions, determine the mass of organic macromolecules and biomolecules. (A.C.A.S.) [pt

Monte Carlo simulations of secondary electron emission due to ion beam milling

Energy Technology Data Exchange (ETDEWEB)

Mahady, Kyle [Univ. of Tennessee, Knoxville, TN (United States); Tan, Shida [Intel Corp., Santa Clara, CA (United States); Greenzweig, Yuval [Intel Israel Ltd., Haifa (Israel); Livengood, Richard [Intel Corp., Santa Clara, CA (United States); Raveh, Amir [Intel Israel Ltd., Haifa (Israel); Fowlkes, Jason D. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Rack, Philip [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-07-01

We present a Monte Carlo simulation study of secondary electron emission resulting from focused ion beam milling of a copper target. The basis of this study is a simulation code which simulates ion induced excitation and emission of secondary electrons, in addition to simulating focused ion beam sputtering and milling. This combination of features permits the simulation of the interaction between secondary electron emission, and the evolving target geometry as the ion beam sputters material. Previous ion induced SE Monte Carlo simulation methods have been restricted to predefined target geometries, while the dynamic target in the presented simulations makes this study relevant to image formation in ion microscopy, and chemically assisted ion beam etching, where the relationship between sputtering, and its effects on secondary electron emission, is important. We focus on a copper target, and validate our simulation against experimental data for a range of: noble gas ions, ion energies, ion/substrate angles and the energy distribution of the secondary electrons. We then provide a detailed account of the emission of secondary electrons resulting from ion beam milling; we quantify both the evolution of the yield as high aspect ratio valleys are milled, as well as the emission of electrons within these valleys that do not escape the target, but which are important to the secondary electron contribution to chemically assisted ion induced etching.

Beam instability during high-current heavy-ion beam transport

International Nuclear Information System (INIS)

Kikuchi, T.; Someya, T.; Kawata, S.; Nakajima, M.; Horioka, K.

2005-01-01

In driver system for heavy ion inertial fusion, beam dynamics is investigated by particle-in-cell simulations during final beam bunching. The particle simulations predict that the beam is transported with the localized transverse charge distribution induced by the strong space charge effect. The calculation results also show that the emittance growth during the longitudinal bunch compression for various particle distributions at the initial conditions and with two types of transverse focusing model, which are a continuous focusing and an alternating gradient focusing lattice configurations. (author)

Aerosol nucleation induced by a high energy particle beam

DEFF Research Database (Denmark)

Enghoff, Martin Andreas Bødker; Pedersen, Jens Olaf Pepke; Uggerhøj, Ulrik I.

2011-01-01

We have studied sulfuric acid aerosol nucleation in an atmospheric pressure reaction chamber using a 580 MeV electron beam to ionize the volume of the reaction chamber. We find a clear contribution from ion-induced nucleation and consider this to be the first unambiguous observation of the ion......-effect on aerosol nucleation using a particle beam under conditions that resemble the Earth's atmosphere. By comparison with ionization using a gamma source we further show that the nature of the ionizing particles is not important for the ion-induced component of the nucleation. This implies that inexpensive...... ionization sources - as opposed to expensive accelerator beams - can be used for investigations of ion-induced nucleation....

Improving depth resolutions in positron beam spectroscopy by concurrent ion-beam sputtering

Science.gov (United States)

John, Marco; Dalla, Ayham; Ibrahim, Alaa M.; Anwand, Wolfgang; Wagner, Andreas; Böttger, Roman; Krause-Rehberg, Reinhard

2018-05-01

The depth resolution of mono-energetic positron annihilation spectroscopy using a positron beam is shown to improve by concurrently removing the sample surface layer during positron beam spectroscopy. During ion-beam sputtering with argon ions, Doppler-broadening spectroscopy is performed with energies ranging from 3 keV to 5 keV allowing for high-resolution defect studies just below the sputtered surface. With this technique, significantly improved depth resolutions could be obtained even at larger depths when compared to standard positron beam experiments which suffer from extended positron implantation profiles at higher positron energies. Our results show that it is possible to investigate layered structures with a thickness of about 4 microns with significantly improved depth resolution. We demonstrated that a purposely generated ion-beam induced defect profile in a silicon sample could be resolved employing the new technique. A depth resolution of less than 100 nm could be reached.

Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

International Nuclear Information System (INIS)

Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

2012-01-01

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

Large scale silver nanowires network fabricated by MeV hydrogen (H+) ion beam irradiation

International Nuclear Information System (INIS)

S, Honey; S, Naseem; A, Ishaq; M, Maaza; M T, Bhatti; D, Wan

2016-01-01

A random two-dimensional large scale nano-network of silver nanowires (Ag-NWs) is fabricated by MeV hydrogen (H + ) ion beam irradiation. Ag-NWs are irradiated under H +  ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H + ion beam-induced welding of Ag-NWs at intersecting positions. H +  ion beam induced welding is confirmed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Moreover, the structure of Ag NWs remains stable under H +  ion beam, and networks are optically transparent. Morphology also remains stable under H +  ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H +  ion beam irradiation. The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices. (paper)

Ion beam induced defects in solids studied by optical techniques

International Nuclear Information System (INIS)

Comins, J.D.; Amolo, G.O.; Derry, T.E.; Connell, S.H.; Erasmus, R.M.; Witcomb, M.J.

2009-01-01

Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems. X- and Y-cut LiNbO 3 crystals implanted with 8 MeV Au 3+ ions with a fluence of 1 x 10 17 ions/cm 2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold. Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the I 3 - structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of I 3 - and I 5 - aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed. The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 x 10 17 ions/cm 2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering. Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 x 10 15 to 250 x 10 15 ions/cm -2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show

Ion beam induced defects in solids studied by optical techniques

Science.gov (United States)

Comins, J. D.; Amolo, G. O.; Derry, T. E.; Connell, S. H.; Erasmus, R. M.; Witcomb, M. J.

2009-08-01

Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems. X- and Y-cut LiNbO 3 crystals implanted with 8 MeV Au 3+ ions with a fluence of 1 × 10 17 ions/cm 2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold. Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the I3- structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of I3- and I5- aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed. The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 10 17 ions/cm 2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering. Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 10 15 to 250 × 10 15 ions/cm -2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show

Hydrodynamic motion of a heavy-ion-beam-heated plasma

International Nuclear Information System (INIS)

Jacoby, J.; Hoffmann, D.H.H.; Mueller, R.W.; Mahrt-Olt, K.; Arnold, R.C.; Schneider, V.; Maruhn, J.

1990-01-01

The first experimental study is reported of a plasma produced by a heavy-ion beam. Relevant parameters for heating with heavy ions are described, temperature and density of the plasma are determined, and the hydrodynamic motion in the target induced by the beam is studied. The measured temperature and the free-electron density are compared with a two-dimensional hydrodynamic-model calculation. In accordance with the model, a radial rarefaction wave reaching the center of the target was observed and the penetration velocity of the ion beam into the xenon-gas target was measured

Ion beam neutralization with ferroelectrically generated electron beams

Energy Technology Data Exchange (ETDEWEB)

Herleb, U; Riege, H [European Organization for Nuclear Research, Geneva (Switzerland). LHC Division

1997-12-31

A technique for ion beam space-charge neutralization with pulsed electron beams is described. The intensity of multiply-charged ions produced with a laser ion source can be enhanced or decreased separately with electron beam trains of MHz repetition rate. These are generated with ferroelectric cathodes, which are pulsed in synchronization with the laser ion source. The pulsed electron beams guide the ion beam in a similar way to the alternating gradient focusing of charged particle beams in circular accelerators such as synchrotrons. This new neutralization technology overcomes the Langmuir-Child space-charge limit and may in future allow ion beam currents to be transported with intensities by orders of magnitude higher than those which can be accelerated today in a single vacuum tube. (author). 6 figs., 10 refs.

Fundamental aspects of laser and ion-beam interactions with solid surfaces

International Nuclear Information System (INIS)

Wang, Z.L.

1982-01-01

In the first part of the thesis laser-beam interactions with solid surfaces are discussed. In the second part ion-beam interactions with solid surfaces are discussed and mainly the mixing of atoms due to ion bombardment. A study of ion-beam mixing of Cu-Au and Cu-W systems is described in order to illustrate the mechanism for ion beam mixing. As Cu-Au are miscible whereas Cu-W systems are not, and both systems have comparable mass numbers, comparison provides a test for current theories on ion-beam mixing. The results of experiments where 300 keV Kr 4+ ion-bombardment at a dose of 5x10 15 cm -2 has been applied to initiate mixing of a single layer structure and sandwich samples for both systems are described. Room temperature irradiations with a dose of 5x10 15 cm -2 show that Cu-Au mix readily, whereas a small mixing effect is observed for Cu-W systems. A comparable amount of mixing for Cu-Au induced by laser or ion beams is found whereas no mixing of Cu-W induced by laser irradiation is observed, which is in agreement with the criteria for formation of metastable solid solutions due to pulsed laser treatment. (Auth.)

An ASEAN Ion Beam Analysis Center at Chiang Mai University, Thailand

International Nuclear Information System (INIS)

Tippawan, U.; Kamwann, T.; Yu, L.D.; Intarasiri, S.; Puttaraksa, N.; Unai, S.; Thongleurm, C.; Singkarat, S.

2014-01-01

To contribute to the development of nuclear science and technology in Thailand, a comprehensive ion beam analysis center unique in the ASEAN region has recently been established at Chiang Mai University, Thailand. The center is equipped with a 1.7-MV Tandetron tandem accelerator with an ion beam analysis beam line. The beam line is currently capable of performing ion beam analysis techniques such as Rutherford Backscattering Spectrometry (RBS), RBS/channeling, Elastic BackScattering (EBS), Particle Induced X-ray Emission (PIXE) and Ionoluminescence (IL) with assistance of commercial and in-house-developed softwares. Micro ion beam for MeV-ion mapping using programmable aperture or capillary focusing techniques is being developed. Ion beam analysis experiments and applications have been vigorously developed, especially for novel materials analysis focused on archeological, gemological and biological materials besides other conventional materials.

Graphene defects induced by ion beam

Science.gov (United States)

Gawlik, Grzegorz; Ciepielewski, Paweł; Baranowski, Jacek; Jagielski, Jacek

2017-10-01

The CVD graphene deposited on the glass substrate was bombarded by molecular carbon ions C3+ C6+ hydrocarbon ions C3H4+ and atomic ions He+, C+, N+, Ar+, Kr+ Yb+. Size and density of ion induced defects were estimated from evolution of relative intensities of Raman lines D (∼1350 1/cm), G (∼1600 1/cm), and D‧ (∼1620 1/cm) with ion fluence. The efficiency of defect generation by atomic ions depend on ion mass and energy similarly as vacancy generation directly by ion predicted by SRIM simulations. However, efficiency of defect generation in graphene by molecular carbon ions is essentially higher than summarized efficiency of similar group of separate atomic carbon ions of the same energy that each carbon ion in a cluster. The evolution of the D/D‧ ratio of Raman lines intensities with ion fluence was observed. This effect may indicate evolution of defect nature from sp3-like at low fluence to a vacancy-like at high fluence. Observed ion graphene interactions suggest that the molecular ion interacts with graphene as single integrated object and should not be considered as a group of atomic ions with partial energy.

Electron Beam Ion Sources

CERN Document Server

Zschornacka, G.; Thorn, A.

2013-12-16

Electron beam ion sources (EBISs) are ion sources that work based on the principle of electron impact ionization, allowing the production of very highly charged ions. The ions produced can be extracted as a DC ion beam as well as ion pulses of different time structures. In comparison to most of the other known ion sources, EBISs feature ion beams with very good beam emittances and a low energy spread. Furthermore, EBISs are excellent sources of photons (X-rays, ultraviolet, extreme ultraviolet, visible light) from highly charged ions. This chapter gives an overview of EBIS physics, the principle of operation, and the known technical solutions. Using examples, the performance of EBISs as well as their applications in various fields of basic research, technology and medicine are discussed.

Ion beam diagnosis

International Nuclear Information System (INIS)

Strehl, P.

1994-04-01

This report is an introduction to ion beam diagnosis. After a short description of the most important ion beam parameters measurements of the beam current by means of Faraday cups, calorimetry, and beam current transformers and measurements of the beam profile by means of viewing screens, profile grids and scanning devices, and residual gas ionization monitors are described. Finally measurements in the transverse and longitudinal phase space are considered. (HSI)

A Study on the Ion Beam Extraction using Duo-PiGatron Ion source for Vertical Type Ion Beam Facility

Energy Technology Data Exchange (ETDEWEB)

Kim, Bom Sok; Lee, Chan young; Lee, Jae Sang [KAERI, Daejeon (Korea, Republic of)

2015-05-15

In Korea Multipurpose Accelerator Complex (KOMAC), we have started ion beam service in the new beam utilization building since March this year. For various ion beam irradiation services, we are developed implanters such as metal (150keV/1mA), gaseous (200keV/5mA) and high current ion beam facility (20keV/150mA). One of the new one is a vertical type ion beam facility without acceleration tube (60keV/20mA) which is easy to install the sample. After the installation is complete, it is where you are studying the optimal ion beam extraction process. Detailed experimental results will be presented. Vertical Type Ion Beam Facility without acceleration tube of 60keV 20mA class was installed. We successfully extracted 60keV 20mA using Duo- PiGatron Ion source for Vertical Type Ion Beam Facility. Use the BPM and Faraday-cup, is being studied the optimum conditions of ion beam extraction.

Beam-plasma instability in ion beam systems used in neutral beam generation

International Nuclear Information System (INIS)

Hooper, E.B. Jr.

1977-02-01

The beam-plasma instability is analyzed for the ion beams used for neutral beam generation. Both positive and negative ion beams are considered. Stability is predicted when the beam velocity is less than the electron thermal velocity; the only exception occurs when the electron density accompanying a negative ion beam is less than the ion density by nearly the ratio of electron to ion masses. For cases in which the beam velocity is greater than the electron thermal velocity, instability is predicted near the electron plasma frequency

Cellular radiobiology of heavy-ion beams

International Nuclear Information System (INIS)

Tobias, C.A.; Blakely, E.A.; Ngo, F.Q.H.; Roots, R.J.; Yang, T.C.

1981-01-01

Progress is reported in the following areas of this research program: relative biological effectiveness and oxygen enhancement ratio of silicon ion beams; heavy ion effects on the cell cycle; the potentiation effect (2 doses of high LET heavy-ion radiations separated by 2 to 3 hours); potentially lethal damage in actively growing cells and plateau growth cells; radiation induced macromolecular lesions and cellular radiation chemistry; lethal effects of dual radiation; and the development of a biophysical repair/misrepair model

Ion beam induced luminescence: Relevance to radiation induced bystander effects

Energy Technology Data Exchange (ETDEWEB)

Ahmad, S.B., E-mail: ahmad.rabilal@gmail.com [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); McNeill, F.E., E-mail: fmcneill@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); Byun, S.H., E-mail: soohyun@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); Prestwich, W.V., E-mail: prestwic@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); Seymour, C., E-mail: seymouc@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); Mothersill, C.E., E-mail: mothers@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada)

2012-10-01

The aim of this work is quantify the light emitted as a result of charged particle interaction in materials which may be of relevance to radiation induced 'bystander effects' studies. We have developed a system which employs single photon counting to measure the light emitted from samples irradiated under vacuum by a charged particle beam. The system uses a fast photomultiplier tube with a peak cathode response at 420 nm. It has been tested in a proof-of-principle experiment using polystyrene targets. Light output, as a result of irradiation, was measured. The luminescence yield appears to have a non-linear behavior with the incident ion fluence: it rises exponentially to an asymptotic value. The target was irradiated with beam energies varying from 1 to 2 MeV and showed saturation at or before an incident fluence rate of 3 Multiplication-Sign 10{sup 13} H{sup +}/cm{sup 2} s. The average saturation value for the photon output was found to be 40 Multiplication-Sign 10{sup 6} cps. Some measurements were performed using filters to study the emission at specific wavelengths. In the case of filtered light measurements, the photon output was found to saturate at 28 Multiplication-Sign 10{sup 3}, 10 Multiplication-Sign 10{sup 6}, and 35 Multiplication-Sign 10{sup 6} cps for wavelengths of 280 {+-} 5 nm, 320 {+-} 5 nm and 340 {+-} 5 nm respectively. The light output reaches a maximum value because of damage induced in the polymer. Our measurements indicate a 'damage cross section' of the order of 10{sup -14} cm{sup 2}. The average radiant intensity was found to increase at wavelengths of 280 and 320 nm when the proton energy was increased. This was not found to occur at 340 nm. In conclusion, the light emission at specific wavelengths was found to depend upon the incident proton fluence and the proton energy. The wavelengths of the emitted light measured in this study have significance for the understanding of radiation induced bystander effects.

Ion beam induced luminescence: Relevance to radiation induced bystander effects

Science.gov (United States)

Ahmad, S. B.; McNeill, F. E.; Byun, S. H.; Prestwich, W. V.; Seymour, C.; Mothersill, C. E.

2012-10-01

The aim of this work is quantify the light emitted as a result of charged particle interaction in materials which may be of relevance to radiation induced "bystander effects" studies. We have developed a system which employs single photon counting to measure the light emitted from samples irradiated under vacuum by a charged particle beam. The system uses a fast photomultiplier tube with a peak cathode response at 420 nm. It has been tested in a proof-of-principle experiment using polystyrene targets. Light output, as a result of irradiation, was measured. The luminescence yield appears to have a non-linear behavior with the incident ion fluence: it rises exponentially to an asymptotic value. The target was irradiated with beam energies varying from 1 to 2 MeV and showed saturation at or before an incident fluence rate of 3 × 1013 H+/cm2 s. The average saturation value for the photon output was found to be 40 × 106 cps. Some measurements were performed using filters to study the emission at specific wavelengths. In the case of filtered light measurements, the photon output was found to saturate at 28 × 103, 10 × 106, and 35 × 106 cps for wavelengths of 280 ± 5 nm, 320 ± 5 nm and 340 ± 5 nm respectively. The light output reaches a maximum value because of damage induced in the polymer. Our measurements indicate a "damage cross section" of the order of 10-14 cm2. The average radiant intensity was found to increase at wavelengths of 280 and 320 nm when the proton energy was increased. This was not found to occur at 340 nm. In conclusion, the light emission at specific wavelengths was found to depend upon the incident proton fluence and the proton energy. The wavelengths of the emitted light measured in this study have significance for the understanding of radiation induced bystander effects.

Biomaterials modification by ion beam

International Nuclear Information System (INIS)

Zhang Tonghe; Yi Zhongzhen; Zhang Xu; Wu Yuguang

2001-01-01

Ion beam technology is one of best ways for the modification of biomaterials. The results of ion beam modification of biomaterials are given. The method and results of improved biocompatibility are indicated by ion beam technology. The future development of ion beam modification of biomaterials is discussed

Heavy-Ion-Induced Electronic Desorption of Gas from Metals

CERN Document Server

Molvik, A W; Mahner, E; Kireeff Covo, M; Bellachioma, M C; Bender, M; Bieniosek, F M; Hedlund, E; Krämer, A; Kwan, J; Malyshev, O B; Prost, L; Seidl, P A; Westenskow, G; Westerberg, L

2007-01-01

During heavy-ion operation in several particle accelerators worldwide, dynamic pressure rises of orders of magnitude were triggered by lost beam ions that bombarded the vacuum chamber walls. This ion-induced molecular desorption, observed at CERN, GSI, and BNL, can seriously limit the ion beam lifetime and intensity of the accelerator. From dedicated test stand experiments we have discovered that heavy-ion-induced gas desorption scales with the electronic energy loss (dEe/dx) of the ions slowing down in matter; but it varies only little with the ion impact angle, unlike electronic sputtering.

Carbon ion beam is more effective to induce cell death in sphere-type A172 human glioblastoma cells compared with X-rays.

Science.gov (United States)

Takahashi, Momoko; Hirakawa, Hirokazu; Yajima, Hirohiko; Izumi-Nakajima, Nakako; Okayasu, Ryuichi; Fujimori, Akira

2014-12-01

To obtain human glioblastoma cells A172 expressing stem cell-related protein and comparison of radiosensitivity in these cells with X-rays and carbon beam. Human monolayer-type A172 glioblastoma cells were maintained in normal medium with 10% bovine serum. In order to obtain sphere-type A172 cells the medium was replaced with serum-free medium supplemented with growth factors. Both types of A172 cells were irradiated with either X-rays or carbon ion beams and their radiosensitivity was evaluated. Serum-free medium induced expression of stem cell-related proteins in A172 cells along with the neurosphere-like appearance. These sphere-type cells were found resistant to both X-rays and carbon ion beams. Phosphorylation of histone H2A family member X persisted for a longer period in the cells exposed to carbon ion beams than in those exposed to X-rays and it disappeared quicker in the sphere type than in the monolayer type. Relative radioresistance of the sphere type cells was smaller for carbon ion beams than for X-rays. We demonstrated that glioblastoma A172 cells with induced stem cell-related proteins turned resistant to irradiation. Accelerated heavy ion particles may have advantage over X-rays in overcoming the tumor resistance due to cell stemness.

Ar ion beam mixing at gold-silicon interfaces

International Nuclear Information System (INIS)

Li Yupu; Chen Jian; Liu Jiarui; Zhang Qichu

1987-01-01

Ar-ion beam mixing at Au-Si interface is investigated systematically as a function of the energy of Ar-ion beam (100-300 keV), dose (5 x 10 15 - 8 x 10 16 /cm 2 ), dose rate (1.6 - 16 μA/cm 2 ) and substrate temperature (77 - 573 K). Very good ion beam mixing is obtained when the Ar-ion range distribution R p ± ΔR p fits the gold film thickness, where R p is the projected range and ΔR p is the standard deviation. At LN 2 temperature, the mixing amount is proportional to the square root of the dose but independent of the dose rate and the mixing process can be explained by the random walking model for the cascade process. At room temperature the dose rate effect is observed because of the beam current induced temperature effect. The temperature effect of the mixing amount, the uniformity, the thickness of mixing layers and the phase structure are observed

Techniques to produce and accelerate radioactive ion beams

CERN Document Server

Penescu, Liviu Constantin; Lettry, Jacques; Cata-Danil, Gheorghe

The production and acceleration of the Radioactive Ion Beams (RIB) continues the long line of nuclear investigations started in the XIXth century by Pierre and Marie Curie, Henri Becquerel and Ernest Rutherford. The contemporary applications of the RIBs span a wide range of physics fields: nuclear and atomic physics, solid-state physics, life sciences and material science. ISOLDE is a world-leading Isotope mass-Separation On-Line (ISOL) facility hosted at CERN in Geneva for more than 40 years, offering the largest variety of radioactive ion beams with, until now, more than 1000 isotopes of more than 72 elements (with Z ranging from 2 to 88), with half-lives down to milliseconds and intensities up to 1011 ions/s. The post acceleration of the full variety of beams allows reaching final energies between 0.8 and 3.0 MeV/u. This thesis describes the development of a new series of FEBIAD (“Forced Electron Beam Induced Arc Discharge”) ion sources at CERN-ISOLDE. The VADIS (“Versatile Arc Discharge Ion Source�...

Ion Beams: A Powerful Tool for Making New Functional Materials

International Nuclear Information System (INIS)

Dev, B. N.

2010-01-01

It is well known that ion beams play an important role in semiconductor industry, which utilizes ion implantation and irradiation for materials modification. Ion sputtering technique is used to fabricate multifunctional coatings and multilayers. Using ion implantation, there is a continued effort for fabrication of quantum bit structures for future quantum computers. Availability of focused ion beams (FIBs) has widened the applications of ion beams and nanostructured functional materials are being fabricated using FIBs. Various quantum structures can be fabricated using FIB. Ferromagnetism can either be induced or destroyed in special layered structures using ion irradiation. The magnetic exchange bias phenomenon is of tremendous utility in magnetic recording. Issues of lateral diffusion in nanoscale doping of semiconductors by FIB and an example of exchange bias enhancement by ion irradiation are discussed.

Reaching for highest ion beam intensities through laser ion acceleration and beam compression

Energy Technology Data Exchange (ETDEWEB)

Schumacher, Dennis; Brabetz, Christian; Blazevic, Abel; Bagnoud, Vincent; Weih, Simon [GSI Helmholtzzentrum fuer Schwerionenforschung (Germany); Jahn, Diana; Ding, Johannes; Roth, Markus [TU Darmstadt (Germany); Kroll, Florian; Schramm, Ulrich; Cowan, Tom [Helmholtzzentrum Dresden Rossendorf (Germany); Collaboration: LIGHT-Collaboration

2016-07-01

Laser ion acceleration provides access to ion sources with unique properties. To use these capabilities the LIGHT collaboration (Laser Ion Generation Handling and Transport) was founded. The aim of this collaboration is the beam transport and manipulation of laser accelerated ions with conventional accelerator structures. Therefor a dedicated beam line has been build up at GSI Helmholtzzentrum fuer Schwerionenforschung. With this beam line the manipulation of the transversal and also the longitudinal beam parameters has been achieved. It has been shown that laser generated ion beams can be transported over more than 6 meters and pulses shorter than 300 ps can be generated at this distance. This Talk will give an overview over the recent developments and plans of the LIGHT collaboration.

Preliminary research results for parameter diagnostics of intense pulsed ion beams

International Nuclear Information System (INIS)

Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Li Jingya; Ren Shuqing; Huang Jianjun; Zhang Jiasheng; Peng Jianchang; Ouyang Xiaoping; Zhang Guoguang; Li Hongyu

2004-01-01

The preliminary experimental results for parameter diagnostics of intense pulsed ion beams from the FLASH II accelerator were reported. The ion number of an intense pulsed ion beam were experimentally determined by monitoring delayed radioactivity from protons induced nuclear reactions in a 12 C target. The prompt γ-rays and diode Bremsstrahlung X-rays were measured with PIN semi-conductor detector and a ST401 plastic scintillator detector. The Bremsstrahlung distribution outside of the drift tube was detected with a thermoluminescent detector and the shielding design was also determined. The current densities of beam were measured with biased ion collector array. The ion beams were also recorded with a CR-39 detector. (author)

Frequency threshold for ion beam formation in expanding RF plasma

Science.gov (United States)

Chakraborty Thakur, Saikat; Harvey, Zane; Biloiu, Ioana; Hansen, Alex; Hardin, Robert; Przybysz, William; Scime, Earl

2008-11-01

We observe a threshold frequency for ion beam formation in expanding, low pressure, argon helicon plasma. Mutually consistent measurements of ion beam energy and density relative to the background ion density obtained with a retarding field energy analyzer and laser induced fluorescence indicate that a stable ion beam of 15 eV appears for source frequencies above 11.5 MHz. Reducing the frequency increases the upstream beam amplitude. Downstream of the expansion region, a clear ion beam is seen only for the higher frequencies. At lower frequencies, large electrostatic instabilities appear and an ion beam is not observed. The upstream plasma density increases sharply at the same threshold frequency that leads to the appearance of a stable double layer. The observations are consistent with the theoretical prediction that downstream electrons accelerated into the source by the double layer lead to increased ionization, thus balancing the higher loss rates upstream [1]. 1. M. A. Lieberman, C. Charles and R. W. Boswell, J. Phys. D: Appl. Phys. 39 (2006) 3294-3304

Development of focused ion beam systems with various ion species

International Nuclear Information System (INIS)

Ji Qing; Leung, K.-N.; King, Tsu-Jae; Jiang Ximan; Appleton, Bill R.

2005-01-01

Conventional focused ion beam systems employ a liquid-metal ion source (LMIS) to generate high-brightness beams, such as Ga + beams. Recently there has been an increased need for focused ion beams in areas like biological studies, advanced magnetic-film manufacturing and secondary-ion mass spectroscopy (SIMS). In this article, status of development on focused ion beam systems with ion species such as O 2 + , P + , and B + will be reviewed. Compact columns for forming focused ion beams from low energy (∼3keV), to intermediate energy (∼35keV) are discussed. By using focused ion beams, a SOI MOSFET is fabricated entirely without any masks or resist

Beam brilliance investigation of high current ion beams at GSI heavy ion accelerator facility.

Science.gov (United States)

Adonin, A A; Hollinger, R

2014-02-01

In this work the emittance measurements of high current Ta-beam provided by VARIS (Vacuum Arc Ion Source) ion source are presented. Beam brilliance as a function of beam aperture at various extraction conditions is investigated. Influence of electrostatic ion beam compression in post acceleration gap on the beam quality is discussed. Use of different extraction systems (single aperture, 7 holes, and 13 holes) in order to achieve more peaked beam core is considered. The possible ways to increase the beam brilliance are discussed.

Measurement and simulation of the effects of ion-induced defects on ion beam-induced charge (IBIC) measurements in Si schottky diodes

International Nuclear Information System (INIS)

Hearne, S.M.; Lay, M.D.H.; Jamieson, D.N.

2004-01-01

Full text: The Ion Beam Induced Charge (IBIC) technique is a very sensitive tool for investigating the electronic properties of semiconductor materials and devices. However, obtaining quantitative information from IBIC experiments requires an accurate model of the materials properties. The interaction of high energy ions with crystalline materials is known to create point defects within the crystal. A significant proportion of defects introduced by the interaction of the ion with the crystal are electrically active and are therefore an important consideration when undertaking an IBIC experiment. The goal of this work is to investigate the possibility of including the relevant defect parameters in computer simulations of the IBIC experiment implemented using Technology Computer Aided Design (TCAD) software. We will present the results from an IBIC study on Si Schottky diodes using 1 MeV alphas. A reduction of greater than 50% in the detected IBIC signal was observed for fluences greater than 5x10 10 He + /cm 2 . The trap parameters following ion irradiation were determined experimentally using DLTS. Comparisons between the experimental IBIC results and TCAD simulations will be discussed

A fast beam-ion instability

Energy Technology Data Exchange (ETDEWEB)

Stupakov, G V [Stanford Linear Accelerator Center, Menlo Park, CA (United States)

1996-08-01

The ionization of residual gas by an electron beam in an accelerator generates ions that can resonantly couple to the beam through a wave propagating in the beam-ion system. Results of the study of a beam-ion instability are presented for a multi-bunch train taking into account the decoherence of ion oscillations due to the ion frequency spread and spatial variation of the ion frequency. It is shown that the combination of both effects can substantially reduce the growth rate of the instability. (author)

Beam-loss induced pressure rise of Large Hadron Collider collimator materials irradiated with 158 GeV/u $In^{49+}$ ions at the CERN Super Proton Synchrotron

CERN Document Server

Mahner, Edgar; Hansen, Jan; Page, Eric; Vincke, H

2004-01-01

During heavy ion operation, large pressure rises, up to a few orders of magnitude, were observed at CERN, GSI, and BNL. The dynamic pressure rises were triggered by lost beam ions that impacted onto the vacuum chamber walls and desorbed about 10/sup 4/ to 10/sup 7/ molecules per ion. The deterioration of the dynamic vacuum conditions can enhance charge-exchange beam losses and can lead to beam instabilities or even to beam abortion triggered by vacuum interlocks. Consequently, a dedicated measurement of heavy-ion induced molecular desorption in the GeV/u energy range is important for Large Hadron Collider (LHC) ion operation. In 2003, a desorption experiment was installed at the super proton synchrotron to measure the beam-loss induced pressure rise of potential LHC collimator materials. Samples of bare graphite, sputter coated (Cu, TiZrV) graphite, and 316 LN (low carbon with nitrogen) stainless steel were irradiated under grazing angle with 158 GeV/u indium ions. After a description of the new experimental ...

Development of a beam ion velocity detector for the heavy ion beam probe

International Nuclear Information System (INIS)

Fimognari, P. J.; Crowley, T. P.; Demers, D. R.

2016-01-01

In an axisymmetric plasma, the conservation of canonical angular momentum constrains heavy ion beam probe (HIBP) trajectories such that measurement of the toroidal velocity component of secondary ions provides a localized determination of the poloidal flux at the volume where they originated. We have developed a prototype detector which is designed to determine the beam angle in one dimension through the detection of ion current landing on two parallel planes of detecting elements. A set of apertures creates a pattern of ion current on wires in the first plane and solid metal plates behind them; the relative amounts detected by the wires and plates determine the angle which beam ions enter the detector, which is used to infer the toroidal velocity component. The design evolved from a series of simulations within which we modeled ion beam velocity changes due to equilibrium and fluctuating magnetic fields, along with the ion beam profile and velocity dispersion, and studied how these and characteristics such as the size, cross section, and spacing of the detector elements affect performance.

Development of a beam ion velocity detector for the heavy ion beam probe

Energy Technology Data Exchange (ETDEWEB)

Fimognari, P. J., E-mail: PJFimognari@XanthoTechnologies.com; Crowley, T. P.; Demers, D. R. [Xantho Technologies, LLC, Madison, Wisconsin 53705 (United States)

2016-11-15

In an axisymmetric plasma, the conservation of canonical angular momentum constrains heavy ion beam probe (HIBP) trajectories such that measurement of the toroidal velocity component of secondary ions provides a localized determination of the poloidal flux at the volume where they originated. We have developed a prototype detector which is designed to determine the beam angle in one dimension through the detection of ion current landing on two parallel planes of detecting elements. A set of apertures creates a pattern of ion current on wires in the first plane and solid metal plates behind them; the relative amounts detected by the wires and plates determine the angle which beam ions enter the detector, which is used to infer the toroidal velocity component. The design evolved from a series of simulations within which we modeled ion beam velocity changes due to equilibrium and fluctuating magnetic fields, along with the ion beam profile and velocity dispersion, and studied how these and characteristics such as the size, cross section, and spacing of the detector elements affect performance.

Laboratory of ion beam applications at ATOMKI

International Nuclear Information System (INIS)

Borbely-Kiss, I.; Huszank, R.; Kertesz, Zs.; Kiss, A.Z.; Koltay, E.; Rajta, I.; Simon, A.; Szabo, Gy.; Szikszai, Z.; Szilasi, S.Z.; Szoboszlai, Z.; Uzonyi, I.

2008-01-01

Introduction. The Laboratory of Ion Beam Applications of ATOMKI is devoted to applications of atomic and nuclear physics in the fields of environmental research, biomedicine, geology, materials and surface science (including ion beam induced damage investigations and proton beam lithography) and cultural heritage research. We perform our work in the frame of various projects and collaborations: EU, IAEA, R and D, OTKA, etc. Our laboratory provides service for external (national and international) and internal users and contributes to higher education, as well. The Laboratory is based on the home-made 5 MV Van de Graaff (VdG) electrostatic accelerator of the institute. The accelerator was put into operation in 1971 and in the beginning it supplied ion beams exclusively for nuclear physics. A few years later with the measurements of K-shell ionization cross sections the door became open also for basic atomic physics. In parallel with this basic study, the application of proton induced X-ray emission (PIXE) for the elemental analysis of biological (hair, erythrocyte and blood plasma) samples and atmospheric aerosols also started. The first paper on PIXE, a methodological one, was published in 1978. The experience gained on these applications and later on archaeology led to the construction of complex PIXE chambers, which were sold, together with the corresponding know-how, to institutions in China, Portugal, Bangladesh, Jordan, North Korea, Singapore, Cuba and Mexico through the International Atomic Energy Agency (IAEA). For the evaluation of PIXE spectra the laboratory has been continuously developing its own computer programme package. The first version of this continuous development was published in 1988. In the meantime a second IBA analysis method, the proton induced gamma ray emission (PIGE), was introduced in the laboratory and was applied simultaneously with PIXE. Application of deuteron induced gamma ray emission (DIGE) started more than a decade later. A

A specialized bioengineering ion beam line

International Nuclear Information System (INIS)

Yu, L.D.; Sangyuenyongpipat, S.; Sriprom, C.; Thongleurm, C.; Suwanksum, R.; Tondee, N.; Prakrajang, K.; Vilaithong, T.; Brown, I.G.; Wiedemann, H.

2007-01-01

A specialized bioengineering ion beam line has recently been completed at Chiang Mai University to meet rapidly growing needs of research and application development in low-energy ion beam biotechnology. This beam line possesses special features: vertical main beam line, low-energy (30 keV) ion beams, double swerve of the beam, a fast pumped target chamber, and an in-situ atomic force microscope (AFM) system chamber. The whole beam line is situated in a bioclean environment, occupying two stories. The quality of the ion beam has been studied. It has proved that this beam line has significantly contributed to our research work on low-energy ion beam biotechnology

LET effects of high energy ion beam irradiation on polysilanes

Energy Technology Data Exchange (ETDEWEB)

Seki, Shu; Kanzaki, Kenichi; Tagawa, Seiichi; Yoshida, Yoichi [Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research; Kudoh, Hisaaki; Sugimoto, Masaki; Sasuga, Tsuneo; Seguchi, Tadao; Shibata, Hiromi

1997-03-01

Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)

Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

International Nuclear Information System (INIS)

Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W.

2005-01-01

The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

Energy Technology Data Exchange (ETDEWEB)

Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W. (eds.)

2005-07-01

The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

Investigations on ion-beam induced desorption from cryogenic surfaces; Untersuchungen zu ionenstrahlinduzierter Desorption von kryogenen Oberflaechen

Energy Technology Data Exchange (ETDEWEB)

Maurer, Christoph

2017-07-03

pumps can be taken into account. This method can be extended to any desorption experiment employing the single shot method for measurement. Of special interest for the operation of the SIS100 at high intensities is the minimization of desorption from cryogenic surfaces. A previous examination of this topic found a breakdown of the familiar scaling of the desorption yield with the beam's energy loss for cryogenic targets. Further examination of this effect with the techniques described above is another goal of this thesis. Simultaneously, desorption measurements at room temperature for several other targets have been conducted. An unexpected result of these experiments is the influence of target surface properties, which was found to be very weak in comparison to previous results. The methods developed during this thesis, along with the results gained by their application, represent another step towards the comprehension of (heavy) ion beam induced desorption.

Effects on cuytoskeleton system in pollen tube of pinus thunbergii induced by ion beam implantation

International Nuclear Information System (INIS)

Huang Qunce; Liang Qiuxia; Li Guopin

2008-01-01

The damage of the cytoskeleton system in the pollen and the pollen tube of Pinus thunbergii induced by ion beam implantation were researched. The results showed that the disorganization of the micro-tubules in the pollen tube was produced by N + implantation. The abnormal states of the pollen tube in morphology were very correlative with the abnormality of the cytoskeleton system. N + implantation was responsible for morphological abnormalities in the pollen tubes. There was a distinct correlation between the damage effects and the ion implantation dose. The add of dose caused more obvious damage effects. Furthermore, the state of the cytoskeleton system in the pollen tube was influenced by the ion implantation. The impact grade depended also on the ion implantation dose. (authors)

Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

International Nuclear Information System (INIS)

Fiala, J.; Armour, D. G.; Berg, J. A. van der; Holmes, A. J. T.; Goldberg, R. D.; Collart, E. H. J.

2006-01-01

The effective transport of high current, positive ion beams at low energies in ion implanters requires the a high level of space charge compensation. The self-induced or forced introduction of electrons is known to result in the creation of a so-called beam plasma through which the beam propagates. Despite the ability of beams at energies above about 3-5 keV to create their own neutralising plasmas and the development of highly effective, plasma based neutralising systems for low energy beams, very little is known about the nature of beam plasmas and how their characteristics and capabilities depend on beam current, beam energy and beamline pressure. These issues have been addressed in a detailed scanning Langmuir probe study of the plasmas created in beams passing through the post-analysis section of a commercial, high current ion implanter. Combined with Faraday cup measurements of the rate of loss of beam current in the same region due to charge exchange and scattering collisions, the probe data have provided a valuable insight into the nature of the slow ion and electron production and loss processes. Two distinct electron energy distribution functions are observed with electron temperatures ≥ 25 V and around 1 eV. The fast electrons observed must be produced in their energetic state. By studying the properties of the beam plasma as a function of the beam and beamline parameters, information on the ways in which the plasma and the beam interact to reduce beam blow-up and retain a stable plasma has been obtained

Lethal and mutagenic effects of ion beams and γ-rays in Aspergillus oryzae

International Nuclear Information System (INIS)

Toyoshima, Yoshiyuki; Takahashi, Akemi; Tanaka, Hisaki; Watanabe, Jun; Mogi, Yoshinobu; Yamazaki, Tatsuo; Hamada, Ryoko; Iwashita, Kazuhiro; Satoh, Katsuya; Narumi, Issay

2012-01-01

Highlights: ► We investigated the effects of different LET radiation in A. oryzae. ► Both γ-rays and ion beams induced base substitutions, frameshifts, deletions. ► Both γ-rays and ion beams induced genome-wide large-scale mutations in A. oryzae. ► Some differences in the types and frequencies of mutations were found. ► Our results provide new basic insights into the mutation breeding of A. oryzae. - Abstract: Aspergillus oryzae is a fungus that is used widely in traditional Japanese fermentation industries. In this study, the lethal and mutagenic effects of different linear energy transfer (LET) radiation in freeze-dried conidia of A. oryzae were investigated. The lethal effect, which was evaluated by a 90% lethal dose, was dependent on the LET value of the ionizing radiation. The most lethal ionizing radiation among that tested was 12 C 5+ ion beams with an LET of 121 keV/μm. The 12 C 5+ ion beams had a 3.6-times higher lethal effect than low-LET (0.2 keV/μm) γ-rays. The mutagenic effect was evaluated by the frequency of selenate resistant mutants. 12 C 6+ ion beams with an LET of 86 keV/μm were the most effective in inducing selenate resistance. The mutant frequency following exposure to 12 C 6+ ion beams increased with an increase in dose and reached 3.47 × 10 −3 at 700 Gy. In the dose range from 0 to 700 Gy, 12 C 5+ ion beams were the second most effective in inducing selenate resistance, the mutant frequency of which reached a maximum peak (1.67 × 10 −3 ) at 400 Gy. To elucidate the characteristics of mutation induced by ionizing radiation, mutations in the sulphate permease gene (sB) and ATP sulfurylase gene (sC) loci, the loss of function of which results in a selenate resistant phenotype, were compared between 12 C 5+ ion beams and γ-rays. We detected all types of transversions and transitions. For frameshifts, the frequency of a +1 frameshift was the highest in all cases. Although the incidence of deletions >2 bp was generally low

Recent work with fast molecular-ion beams at Argonne National Laboratory

International Nuclear Information System (INIS)

Cooney, P.J.; Gemmell, D.S.; Groeneveld, K.O.; Kanter, E.P.; Pietsch, W.J.; Vager, Z.; Zabransky, B.J.

1979-01-01

Research in these areas during 1979 is summarized: (a) studies of molecular-ion dissociation in gaseous targets, (b) developing an understanding of the origins of central peaks and of the two phenomena of the transmission of fast molecular ions through thin foil targets and of the production of neutral fragments from collision-induced dissociation of fast molecular projectiles, (c) studies exploring the extent to which high-resolution measurements on dissociation fragments can be used to determine the stereochemical structures of the molecular ions in the incident beam, (d) extensive modifications to the beam-line and apparatus at the 4-MV Dynamitron so as to permit a wide variety of coincidence measurements on fragments from collision-induced molecular-ion dissociation

Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

Science.gov (United States)

Lee, Jung-Kun; Nastasi, Michael

2012-11-01

The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.

The toroidicity-induced Alfven eigenmode structure in DIII-D: Implications of soft x-ray and beam-ion loss data

International Nuclear Information System (INIS)

Carolipio, E. M.; Heidbrink, W. W.; Cheng, C. Z.; Chu, M. S.; Fu, G. Y.; Jaun, A.; Spong, D. A.; Turnbull, A. D.; White, R. B.

2001-01-01

The internal structure of the toroidicity-induced Alfven eigenmode (TAE) is studied by comparing soft x-ray profile and beam ion loss data taken during TAE activity in the DIII-D tokamak [W. W. Heidbrink , Nucl. Fusion 37, 1411 (1997)] with predictions from theories based on ideal magnetohydrodynamic (MHD), gyrofluid, and gyrokinetic models. The soft x-ray measurements indicate a centrally peaked eigenfunction, a feature which is closest to the gyrokinetic model's prediction. The beam ion losses are simulated using a guiding center code. In the simulations, the TAE eigenfunction calculated using the ideal MHD model acts as a perturbation to the equilibrium field. The predicted beam ion losses are an order of magnitude less than the observed ∼6%--8% losses at the peak experimental amplitude of {delta}B r /B 0 ≅2--5 x 10 -4

Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

International Nuclear Information System (INIS)

Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

1999-01-01

The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

The role of space charge compensation for ion beam extraction and ion beam transport (invited)

International Nuclear Information System (INIS)

Spädtke, Peter

2014-01-01

Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation

Tuning the shape and damage in ion-beam induced ripples on silicon

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany); Hanisch, Antje; Grenzer, Joerg [Helmholtz-Zentrum Dresden-Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, P.O. Box 510119, 01314 Dresden (Germany); Metzger, Till Hartmut [ESRF, 6 rue Jules Horowitz, BP220, 38043 Grenoble Cedex (France)

2011-11-15

We investigate the influence of ion beam parameters on the ripple formation on Si(001) surfaces after bombardment with Xe{sup +} ions of 25 keV kinetic energy using a scanning ion beam system. By combining grazing incidence X-ray diffraction, small angle scattering and X-ray reflectivity, we show that during ion irradiation with 70 off-normal angle of incidence, changing the size of the irradiated area leads to an increased number of defects at the interface towards crystalline material. At 65 angle of incidence, the ripple amplitude grows. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Ion beam generation and focusing

International Nuclear Information System (INIS)

Miller, P.A.; Mendel, C.W.; Swain, D.W.; Goldstein, S.A.

1975-01-01

Calculations have shown that efficiently generated and focused ion beams could have significant advantages over electron beams in achieving ignition of inertially-confined thermonuclear fuel. Efficient ion beam generation implies use of a good ion source and suppression of net electron current. Net electron flow can be reduced by allowing electrons to reflex through a highly transparent anode or by use of transverse magnetic fields (either beam self-fields or externally applied fields). Geometric focusing can be achieved if the beam is generated by appropriately shaped electrodes. Experimental results are presented which demonstrate ion beam generation in both reflexing and pinched-flow diodes. Spherically shaped electrodes are used to concentrate a proton beam, and target response to proton deposition is studied

Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

International Nuclear Information System (INIS)

Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Naramoto, H.

2007-01-01

In this work, we implanted B + , O + , Al + , and P + ions into ZnO with energy of 50-380 keV and total doses of 4 x 10 15 cm -2 for each ion. The implantation-induced defects and their thermal recovery were studied using a slow positron beam. Vacancy clusters are produced in all the implanted samples. It is found that the thermal recovery of these vacancies induced by different ions shows much difference. In case of B + and Al + -implantation, the vacancy clusters agglomerate to much larger size and might evolve to microvoids during annealing. However, for O + and P + ions, which are heavier than B + and Al + , the vacancies show a much weaker agglomeration process. The mechanism of such difference is discussed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Formation of plasmid DNA strand breaks induced by low-energy ion beam: indication of nuclear stopping effects

International Nuclear Information System (INIS)

Chen Yu; Jiang Bingyao; Chen Youshan; Ding Xingzhao; Liu Xianghuai; Chen Ceshi; Guo Xinyou; Yin Guanglin

1998-01-01

Plasmid pGEM 3zf(+) was irradiated by nitrogen ion beam with energies between 20 and 100 keV and the fluence kept as 1 x 10 12 ions/cm 2 . The irradiated plasmid was assayed by neutral electrophoresis and quantified by densitometry. The yields of DNA with single-strand and double-strand breaks first increased then decreased with increasing ion energy. There was a maximal yield value in the range of 20-100 keV. The relationship between DNA double-strand breaks (DSB) cross-section and linear energy transfer (LET) also showed a peak-shaped distribution. To understand the physical process during DNA strand breaks, a Monte Carlo calculation code known as TRIM (Transport of Ions in Matter) was used to simulate energy losses due to nuclear stopping and to electronic stopping. It can be assumed that nuclear stopping plays a more important role in DNA strand breaks than electronic stopping in this energy range. The physical mechanisms of DNA strand breaks induced by a low-energy ion beam are also discussed. (orig.)

Radioactive ion beam production challenges at the Holifield Heavy Ion Research Facility

International Nuclear Information System (INIS)

Meigs, M.J.; Alton, G.D.; Dowling, D.T.; Haynes, D.L.; Jones, C.M.; Juras, R.C.; Lane, S.N.; Mills, G.D.; Mosko, S.W.; Olsen, D.K.; Tatum, B.A.

1992-01-01

The radioactive ion beam (RIB) project at the Holifield Heavy Ion Research Facility (HHIRF) will provide for reconfiguration of the HHIRF accelerator system to enable provision of low-intensity RIBs for nuclear and astrophysics research. As we have progressed with the design of the reconfiguration, we have encountered several challenges that were not immediately obvious when first contemplating the project. The challenges do not seem insurmountable but should keep life interesting for those of us doing the work. A brief review of the project will allow a better understanding of the challenges in RIB production. Radioactive ion beams will be produced with the Isotope Separator On-Line (ISOL) postacceleration technique. In particular, radioactive atoms will be produced by reactions in the thick stopping target of an ISOL-type target-ion source assembly using intense beams from the Oak Ridge Isochronous Cyclotron equipped with a light-ion internal source. This ISOL target-ion source assembly will be mounted on a high-voltage platform with a mass separator. The target ion source will operate at potentials up to 50 kV with respect to the high voltage platform. The radioactive atoms produced by nuclear reactions in the target diffuse to the surface of the heated target material, desorb from this surface, and effuse through a heated transfer tube into an ion source where ionization and extraction take place. Two types of ion sources will be initially considered. A Forced Electron Beam Induced Arc Discharge source, similar to those used by the ISOLDE facility at CERN and by the UNISOR facility at ORNL, will be built to produce positive ions. These positive ions will be focused through an alkali vapor charge-exchange canal to produce negative ions for tandem injection. In addition, a direct negative surface ionization addition or modification to the above source will be built and investigated

Ion-Beam-Excited Electrostatic Ion Cyclotron Waves

DEFF Research Database (Denmark)

Michelsen, Poul; Pécseli, Hans; Juul Rasmussen, Jens

1976-01-01

Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field.......Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field....

Low energy ion beam dynamics of NANOGAN ECR ion source

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sarvesh, E-mail: sarvesh@iuac.res.in; Mandal, A.

2016-04-01

A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

Ion beam induced nanosized Ag metal clusters in glass

International Nuclear Information System (INIS)

Mahnke, H.-E.; Schattat, B.; Schubert-Bischoff, P.; Novakovic, N.

2006-01-01

Silver metal clusters have been formed in soda lime glass by high-energy heavy-ion irradiation at ISL. The metal cluster formation was detected with X-ray absorption spectroscopy (EXAFS) in fluorescence mode, and the shape of the clusters was imaged with transmission electron microscopy. While annealing in reducing atmosphere alone, leads to the formation of metal clusters in Ag-containing glasses, where the Ag was introduced by ion-exchange, such clusters are not very uniform in size and are randomly distributed over the Ag-containing glass volume. Irradiation with 600-MeV Au ions followed by annealing, however, results in clusters more uniform in size and arranged in chains parallel to the direction of the ion beam

Fusion at counterstreaming ion beams - ion optic fusion (IOF)

International Nuclear Information System (INIS)

Gryzinski, M.

1981-01-01

The results of investigation are briefly reviewed in the field of ion optic fusion performed at the Institute of Nuclear Research in Swierk. The ion optic fusion concept is based on the possibility of obtaining fusion energy at highly ordered motion of ions in counterstreaming ion beams. For this purpose TW ion beams must be produced and focused. To produce dense and charge-neutralized ion beams the selective conductivity and ballistic focusing ideas were formulated and used in a series of RPI devices with low-pressure cylindrical discharge between grid-type electrodes. 100 kA, 30 keV deuteron beams were successfully produced and focused into the volume of 1 cm 3 , yielding 10 9 neutrons per 200 ns shot on a heavy ice target. Cylindrically convergent ion beams with magnetic anti-defocusing were proposed in order to reach a positive energy gain at reasonable energy level. (J.U.)

Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA

International Nuclear Information System (INIS)

Norarat, R.; Semsang, N.; Anuntalabhochai, S.; Yu, L.D.

2009-01-01

Ion beam bombardment of biological organisms has been recently applied to mutation breeding of both agricultural and horticultural plants. In order to explore relevant mechanisms, this study employed low-energy ion beams to bombard naked plasmid DNA. The study aimed at simulation of the final stage of the process of the ion beam bombardment of real cells to check whether and how very low-energy and low-fluence of ions can induce mutation. Argon and nitrogen ions at 5 keV and 2.5 keV respectively bombarded naked plasmid DNA pGFP to very low-fluences, an order of 10 13 ions/cm 2 . Subsequently, DNA states were analyzed using electrophoresis. Results provided evidences that the very low-energy and low-fluence ion bombardment indeed altered the DNA structure from supercoil to short linear fragments through multiple double strand breaks and thus induced mutation, which was confirmed by transfer of the bombarded DNA into bacteria Escherichia coli and subsequent expression of the marker gene.

Lethal and mutagenic effects of ion beams and γ-rays in Aspergillus oryzae

Energy Technology Data Exchange (ETDEWEB)

Toyoshima, Yoshiyuki, E-mail: toyoshima@yamasa.com [Soy Sauce Laboratory, Yamasa Corporation, 2-10-1 Araoicho, Choshi, Chiba 288-0056 (Japan); Takahashi, Akemi; Tanaka, Hisaki; Watanabe, Jun; Mogi, Yoshinobu; Yamazaki, Tatsuo [Soy Sauce Laboratory, Yamasa Corporation, 2-10-1 Araoicho, Choshi, Chiba 288-0056 (Japan); Hamada, Ryoko; Iwashita, Kazuhiro [Fundamental Research Division, National Research Institute of Brewing, 3-7-1 Kagamiyama, Higashihiroshima, Hiroshima 739-0046 (Japan); Satoh, Katsuya; Narumi, Issay [Ion Beam Mutagenesis Research Group, Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-12-15

Highlights: ► We investigated the effects of different LET radiation in A. oryzae. ► Both γ-rays and ion beams induced base substitutions, frameshifts, deletions. ► Both γ-rays and ion beams induced genome-wide large-scale mutations in A. oryzae. ► Some differences in the types and frequencies of mutations were found. ► Our results provide new basic insights into the mutation breeding of A. oryzae. - Abstract: Aspergillus oryzae is a fungus that is used widely in traditional Japanese fermentation industries. In this study, the lethal and mutagenic effects of different linear energy transfer (LET) radiation in freeze-dried conidia of A. oryzae were investigated. The lethal effect, which was evaluated by a 90% lethal dose, was dependent on the LET value of the ionizing radiation. The most lethal ionizing radiation among that tested was {sup 12}C{sup 5+} ion beams with an LET of 121 keV/μm. The {sup 12}C{sup 5+} ion beams had a 3.6-times higher lethal effect than low-LET (0.2 keV/μm) γ-rays. The mutagenic effect was evaluated by the frequency of selenate resistant mutants. {sup 12}C{sup 6+} ion beams with an LET of 86 keV/μm were the most effective in inducing selenate resistance. The mutant frequency following exposure to {sup 12}C{sup 6+} ion beams increased with an increase in dose and reached 3.47 × 10{sup −3} at 700 Gy. In the dose range from 0 to 700 Gy, {sup 12}C{sup 5+} ion beams were the second most effective in inducing selenate resistance, the mutant frequency of which reached a maximum peak (1.67 × 10{sup −3}) at 400 Gy. To elucidate the characteristics of mutation induced by ionizing radiation, mutations in the sulphate permease gene (sB) and ATP sulfurylase gene (sC) loci, the loss of function of which results in a selenate resistant phenotype, were compared between {sup 12}C{sup 5+} ion beams and γ-rays. We detected all types of transversions and transitions. For frameshifts, the frequency of a +1 frameshift was the highest in all

Ion-Ion Plasmas Produced by Electron Beams

Science.gov (United States)

Fernsler, R. F.; Leonhardt, D.; Walton, S. G.; Meger, R. A.

2001-10-01

The ability of plasmas to etch deep, small-scale features in materials is limited by localized charging of the features. The features charge because of the difference in electron and ion anisotropy, and thus one solution now being explored is to use ion-ion plasmas in place of electron-ion plasmas. Ion-ion plasmas are effectively electron-free and consist mainly of positive and negative ions. Since the two ion species behave similarly, localized charging is largely eliminated. However, the only way to produce ion-ion plasmas at low gas pressure is to convert electrons into negative ions through two-body attachment to neutrals. While the electron attachment rate is large at low electron temperatures (Te < 1 eV) in many of the halogen gases used for processing, these temperatures occur in most reactors only during the afterglow when the heating fields are turned off and the plasma is decaying. By contrast, Te is low nearly all the time in plasmas produced by electron beams, and therefore electron beams can potentially produce ion-ion plasmas continuously. The theory of ion-ion plasmas formed by pulsed electron beams is examined in this talk and compared with experimental results presented elsewhere [1]. Some general limitations of ion-ion plasmas, including relatively low flux levels, are discussed as well. [1] See the presentation by D. Leonhardt et al. at this conference.

Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

Energy Technology Data Exchange (ETDEWEB)

Chen, Z.Q. [Department of Physics, Wuhan University (China); Maekawa, M.; Kawasuso, A.; Naramoto, H. [Advanced Science Research Center, Japan Atomic Energy Agency, Takasaki, Gunma (Japan)

2007-07-01

In this work, we implanted B{sup +}, O{sup +}, Al{sup +}, and P{sup +} ions into ZnO with energy of 50-380 keV and total doses of 4 x 10{sup 15} cm{sup -2} for each ion. The implantation-induced defects and their thermal recovery were studied using a slow positron beam. Vacancy clusters are produced in all the implanted samples. It is found that the thermal recovery of these vacancies induced by different ions shows much difference. In case of B{sup +} and Al{sup +}-implantation, the vacancy clusters agglomerate to much larger size and might evolve to microvoids during annealing. However, for O{sup +} and P{sup +} ions, which are heavier than B{sup +} and Al{sup +}, the vacancies show a much weaker agglomeration process. The mechanism of such difference is discussed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

TEM study of the ion beam induced damage during 14 kev P+ implantation in silicon

International Nuclear Information System (INIS)

Rubanov, S.; Tamanyan, G.; Hudson, F.; Jamieson, D.N.; McCallum, J.C.; Prawer, S.

2005-01-01

The proposed silicon-based quantum computer architecture comprises an array of phosphorus donor atoms (qubits) positioned with nanometre accuracy beneath the surface of a semiconductor host, using a single ion implantation technique. The average depth of the implanted ions (the projected range R p ), lateral range R p 1, and the distribution of ions about that depth can be approximated as two-dimensional Gaussian with standard deviation ΔR p and ΔR p 1 (lateral straggle). Using transmission electron microscopy (TEM) we studied ion beam induced damage after 14 keV P + implantation in Si. The TEM images allowed us to compare the depth of the amorphous cluster formation to R p , R p 1, ΔR p 1 calculated from SRIM and hence determine evidence for the limitation on the accuracy of the position of the implanted ions imposed by straggling. (author). 4 refs., 3 figs

Plasma ion sources and ion beam technology in microfabrications

International Nuclear Information System (INIS)

Ji, Lili

2007-01-01

For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area. As the dimensions of IC devices are scaled down, it has shown the need for new ion beam tools and new approaches to the fabrication of small-scale devices. In the meanwhile, nanotechnology has also deeply involved in material science research and bioresearch in recent years. The conventional FIB systems which utilize liquid gallium ion sources to achieve nanometer scale resolution can no longer meet the various requirements raised from such a wide application area such as low contamination, high throughput and so on. The drive towards controlling materials properties at nanometer length scales relies on the availability of efficient tools. In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications. An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification. This new instrument employs a mini-RF driven plasma source to generate focused ion beam with various ion species, a FEI two-lens electron (2LE) column for SEM imaging, and a five-axis manipulator system for sample positioning. An all-electrostatic two-lens column has been designed to focus the ion beam extracted from the source. Based on the Munro ion optics simulation, beam spot sizes as small as 100 nm can be achieved at beam energies between 5 to 35 keV if a 5 (micro)m-diameter extraction aperture is used. Smaller beam spot sizes can be obtained with smaller apertures at sacrifice of some beam current. The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance

Intense ion beam generator

International Nuclear Information System (INIS)

Humphries, S. Jr.; Sudan, R.N.

1977-01-01

Methods and apparatus for producing intense megavolt ion beams are disclosed. In one embodiment, a reflex triode-type pulsed ion accelerator is described which produces ion pulses of more than 5 kiloamperes current with a peak energy of 3 MeV. In other embodiments, the device is constructed so as to focus the beam of ions for high concentration and ease of extraction, and magnetic insulation is provided to increase the efficiency of operation

Ion beam assisted film growth

CERN Document Server

Itoh, T

2012-01-01

This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

A sextupole ion beam guide to improve the efficiency and beam quality at IGISOL

International Nuclear Information System (INIS)

Karvonen, P.; Moore, I.D.; Sonoda, T.; Kessler, T.; Penttilae, H.; Peraejaervi, K.; Ronkanen, P.; Aystoe, J.

2008-01-01

The laser ion source project at the IGISOL facility, Jyvaeskylae, has motivated the development and construction of an rf sextupole ion beam guide (SPIG) to replace the original skimmer electrode. The SPIG has been tested both off-line and on-line in proton-induced fission, light-ion and heavy-ion induced fusion-evaporation reactions and, in each case, has been directly compared to the skimmer system. For both fission and light-ion induced fusion, the SPIG has improved the mass-separated ion yields by a factor of typically 4-8. Correspondingly, the transmission efficiency of both systems has been studied in simulations with and without space charge effects. The transport capacity of the SPIG has been experimentally determined to be ∼10 12 ions s -1 before space charge effects start to take effect. A direct comparison with the simulation has been made using data obtained via light-ion fusion evaporation. Both experiment and simulation show an encouraging agreement as a function of current extracted from the ion guide.

Realization of a scanning ion beam monitor

International Nuclear Information System (INIS)

Pautard, C.

2008-07-01

During this thesis, a scanning ion beam monitor has been developed in order to measure on-line fluence spatial distributions. This monitor is composed of an ionization chamber, Hall Effect sensors and a scintillator. The ionization chamber set between the beam exit and the experiment measures the ion rate. The beam spot is localized thanks to the Hall Effect sensors set near the beam sweeping magnets. The scintillator is used with a photomultiplier tube to calibrate the ionization chamber and with an imaging device to calibrate the Hall Effect sensors. This monitor was developed to control the beam lines of a radiobiology dedicated experimentation room at GANIL. These experiments are held in the context of the research in hadron-therapy. As a matter of fact, this new cancer treatment technique is based on ion irradiations and therefore demands accurate knowledge about the relation between the dose deposit in biological samples and the induced effects. To be effective, these studies require an on-line control of the fluence. The monitor has been tested with different beams at GANIL. Fluence can be measured with a relative precision of ±4% for a dose rate ranging between 1 mGy/s and 2 Gy/s. Once permanently set on the beam lines dedicated to radiobiology at GANIL, this monitor will enable users to control the fluence spatial distribution for each irradiation. The scintillator and the imaging device are also used to control the position, the spot shape and the energy of different beams such as those used for hadron-therapy. (author)

Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

Energy Technology Data Exchange (ETDEWEB)

Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

2016-01-15

The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

Scintillation screen materials for beam profile measurements of high energy ion beams

Energy Technology Data Exchange (ETDEWEB)

Krishnakumar, Renuka

2016-06-22

For the application as a transverse ion beam diagnostics device, various scintillation screen materials were analysed. The properties of the materials such as light output, image reproduction and radiation stability were investigated with the ion beams extracted from heavy ion synchrotron SIS-18. The ion species (C, Ne, Ar, Ta and U) were chosen to cover the large range of elements in the periodic table. The ions were accelerated to the kinetic energies of 200 MeV/u and 300 MeV/u extracted with 300 ms pulse duration and applied to the screens. The particle intensity of the ion beam was varied from 10{sup 4} to 10{sup 9} particles per pulse. The screens were irradiated with typically 40 beam pulses and the scintillation light was captured using a CCD camera followed by characterization of the beam spot. The radiation hardness of the screens was estimated with high intensity Uranium ion irradiation. In the study, a linear light output for 5 orders of magnitude of particle intensities was observed from sensitive scintillators and ceramic screens such as Al{sub 2}O{sub 3}:Cr and Al{sub 2}O{sub 3}. The highest light output was recorded by CsI:Tl and the lowest one by Herasil. At higher beam intensity saturation of light output was noticed from Y and Mg doped ZrO{sub 2} screens. The light output from the screen depends not only on the particle intensity but also on the ion species used for irradiation. The light yield (i.e. the light intensity normalised to the energy deposition in the material by the ion) is calculated from the experimental data for each ion beam setting. It is shown that the light yield for light ions is about a factor 2 larger than the one of heavy ions. The image widths recorded exhibit a dependence on the screens material and differences up to 50 % were registered. On radiation stability analysis with high particle intensity of Uranium ions of about 6 x 10{sup 8} ppp, a stable performance in light output and image reproduction was documented from Al

Beam-plasma discharge in a Kyoto beam-plasma-ion source

International Nuclear Information System (INIS)

Ishikawa, J.; Takagi, T.

1983-01-01

A beam-plasma type ion source employing an original operating principle has been developed by the present authors. The ion source consists of an ion extraction region with an electron gun, a thin long drift tube as the plasma production chamber, and a primary electron beam collector. An electron beam is effectively utilized for the dual purpose of high density plasma production as a result of beam-plasma discharge, and high current ion beam extraction with ion space-charge compensation. A high density plasma of the order of 10 11 --10 13 cm -3 was produced by virtue of the beam-plasma discharge which was caused by the interaction between a space-charge wave on the electron beam and a high frequency plasma wave. The plasma density then produced was 10 2 --10 3 times the density produced only by collisional ionization by the electron beam. In order to obtain a stable beam-plasma discharge, a secondary electron beam emitted from the electron collector should be utilized. The mechanism of the beam-plasma discharge was analyzed by use of a linear theory in the case of the small thermal energy of the electron beam, and by use of a quasilinear theory in the case of the large thermal energy. High current ion beams of more than 0.1 A were extracted even at a low extraction voltage of 1--5 kV

A low-cost non-intercepting beam current and phase monitor for heavy ions

International Nuclear Information System (INIS)

Bogaty, J.M.; Clifft, B.E.

1995-01-01

A low cost ion beam measurement system has been developed for use at ATLAS. The system provides nondestructive phase and intensity measurement of passing ion beam bunches by sensing their electric fields. Bunches traverse a short tubular electrode thereby inducing displacement currents. These currents are brought outside the vacuum jacket where a lumped inductance resonates electrode capacitance at one of the bunching harmonic frequencies. This configuration yields a basic sensitivity of a few hundred millivolts signal per microampere of beam current. Beam induced radiofrequency signals are summed against an offset frequency generated by the master oscillator. The resulting difference frequency conveys beam intensity and bunch phase information which is sent to separate processing channels. One channel utilizes a phase locked loop to stabilize phase readings during microsecond beam drop outs. The other channel uses a linear full-wave active rectifier circuit which converts sine wave signal amplitude to a DC voltage representing beam current. Plans are in progress to install this new diagnostic at several locations in ATLAS which should help shorten the tuning cycle of new ion species

New results on the beam-loss criteria for heavy-ion accelerators

International Nuclear Information System (INIS)

Katrik, Peter; Hoffmann, Dieter H.H.; Mustafin, Edil; Strasik, Ivan; Pavlovic, Marius

2015-01-01

Activation of high-energy heavy-ion accelerators due to beam losses is a serious issue for accelerator parts like collimators, magnets, beam-lines, fragment separator targets, etc. The beam losses below 1 W/m are considered as tolerable for 'hands-on' maintenance in proton machines. In our previous studies, the FLUKA2008 code has been used for establishing a scaling law expanding the existing beam-loss tolerance for 1 GeV protons to heavy ions. This scaling law enabled specifying beam-loss criteria for projectile species from proton up to uranium at energies from 200 MeV/u up to 1 GeV/u. FLUKA2008 allowed nucleus-nucleus interactions down to 100 MeV/u only. In this work, we review our previous results and extend activation simulations to lower energies with the help of the new FLUKA version, namely FLUKA2011. It includes models for nucleus-nucleus interactions below 100 MeV/u. We also tried to expand the scaling law to lower energies. This, however, needs further studies, because the heavy-ion-induced nuclide composition starts deviating from the proton-induced nuclide composition at energies below 150 MeV/u. (authors)

Control of colliding ion beams

International Nuclear Information System (INIS)

Salisbury, W.W.

1985-01-01

This invention relates to a method and system for enhancing the power-producing capability of a nuclear fusion reactor, and more specifically to methods and structure for enhancing the ion density in a directed particle fusion reactor. In accordance with the invention, oppositely directed ion beams constrained to helical paths pass through an annular reaction zone. The object is to produce fusion reactions due to collisions between the ion beams. The reaction zone is an annulus as between an inner-cylindrical electrode and an outer-cylindrical coaxial electrode. The beams are enhanced in ion density at spaced points along the paths by providing spline structures protruding from the walls of the electrodes into the reaction zone. This structure causes variations in the electric field along the paths followed by the ion beams. Such fields cause the beams to be successively more and less concentrated as the beams traverse the reaction zone. Points of high concentration are the points at which fusion-producing collisions are most likely to take place

Ion beam enhancement in magnetically insulated ion diodes for high-intensity pulsed ion beam generation in non-relativistic mode

Energy Technology Data Exchange (ETDEWEB)

Zhu, X. P. [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Zhang, Z. C.; Lei, M. K., E-mail: surfeng@dlut.edu.cn [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Pushkarev, A. I. [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Laboratory of Beam and Plasma Technology, High Technologies Physics Institute, Tomsk Polytechnic University, 30, Lenin Ave, 634050 Tomsk (Russian Federation)

2016-01-15

High-intensity pulsed ion beam (HIPIB) with ion current density above Child-Langmuir limit is achieved by extracting ion beam from anode plasma of ion diodes with suppressing electron flow under magnetic field insulation. It was theoretically estimated that with increasing the magnetic field, a maximal value of ion current density may reach nearly 3 times that of Child-Langmuir limit in a non-relativistic mode and close to 6 times in a highly relativistic mode. In this study, the behavior of ion beam enhancement by magnetic insulation is systematically investigated in three types of magnetically insulated ion diodes (MIDs) with passive anode, taking into account the anode plasma generation process on the anode surface. A maximal enhancement factor higher than 6 over the Child-Langmuir limit can be obtained in the non-relativistic mode with accelerating voltage of 200–300 kV. The MIDs differ in two anode plasma formation mechanisms, i.e., surface flashover of a dielectric coating on the anode and explosive emission of electrons from the anode, as well as in two insulation modes of external-magnetic field and self-magnetic field with either non-closed or closed drift of electrons in the anode-cathode (A-K) gap, respectively. Combined with ion current density measurement, energy density characterization is employed to resolve the spatial distribution of energy density before focusing for exploring the ion beam generation process. Consistent results are obtained on three types of MIDs concerning control of neutralizing electron flows for the space charge of ions where the high ion beam enhancement is determined by effective electron neutralization in the A-K gap, while the HIPIB composition of different ion species downstream from the diode may be considerably affected by the ion beam neutralization during propagation.

Electron beam based transversal profile measurements of intense ion beams

International Nuclear Information System (INIS)

El Moussati, Said

2014-01-01

A non-invasive diagnostic method for the experimental determination of the transverse profile of an intense ion beam has been developed and investigated theoretically as well as experimentally within the framework of the present work. The method is based on the deflection of electrons when passing the electromagnetic field of an ion beam. To achieve this an electron beam is employed with a specifically prepared transversal profile. This distinguish this method from similar ones which use thin electron beams for scanning the electromagnetic field [Roy et al. 2005; Blockland10]. The diagnostic method presented in this work will be subsequently called ''Electron-Beam-Imaging'' (EBI). First of all the influence of the electromagnetic field of the ion beam on the electrons has been theoretically analyzed. It was found that the magnetic field causes only a shift of the electrons along the ion beam axis, while the electric field only causes a shift in a plane transverse to the ion beam. Moreover, in the non-relativistic case the magnetic force is significantly smaller than the Coulomb one and the electrons suffer due to the magnetic field just a shift and continue to move parallel to their initial trajectory. Under the influence of the electric field, the electrons move away from the ion beam axis, their resulting trajectory shows a specific angle compared to the original direction. This deflection angle practically depends just on the electric field of the ion beam. Thus the magnetic field has been neglected when analysing the experimental data. The theoretical model provides a relationship between the deflection angle of the electrons and the charge distribution in the cross section of the ion beam. The model however only can be applied for small deflection angles. This implies a relationship between the line-charge density of the ion beam and the initial kinetic energy of the electrons. Numerical investigations have been carried out to clarify the

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

International Nuclear Information System (INIS)

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

2013-01-01

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport

Structuring of silicon with low energy focused ion beams

Energy Technology Data Exchange (ETDEWEB)

Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

Establishment of an ASEAN Ion Beam Analysis Centre for Material Characterizations at Chiang Mai University

International Nuclear Information System (INIS)

Kamwanna, T.; Junphong, P.; Yu, L.D.; Singkarat, S.; Intarasiri, S.; Suwannakachorn, D.

2015-01-01

A comprehensive ion beam analysis centre unique in the ASEAN (Association of Southeast Asian Nations) region has been established at Chiang Mai University, Thailand. The centre is equipped with a 1.7 MV Tandetron tandem accelerator and a 300 kV medium energy ion beam accelerator for ion beam analysis. The Tandetron accelerator employs two ion sources, a duoplasmatron ion source and a sputter ion source, capable of producing ion beams of both light species (hydrogen and helium) and heavy species. The beamline is currently able to perform ion beam analysis techniques, such as Rutherford backscattering spectrometry (RBS), RBS/channelling, elastic backscattering (EBS), particle induced x ray emission (PIXE) and ionoluminescence (IL) with the assistance of commercial and self-developed software. The medium energy ion accelerator features an ns pulsed beam so that time of flight (ToF) RBS analysis using medium energy ion beams is available for detailed analysis of materials. Ion beam analysis experiments and applications have been vigorously developed for the real time characterization of various materials. Examples are presented and qualities of the ion beam analysis techniques are discussed. (author)

Effects of Ion Beam Irradiation on Nanoscale InOx Cooper-Pair Insulators

Directory of Open Access Journals (Sweden)

Srdjan Milosavljević

2013-01-01

Full Text Available This paper examines the effects of irradiating indium oxide films of nanoscale thickness by ion beams, when these films are in the Cooper-pair insulator state. Radiation effects are predicted on the basis of Monte Carlo simulations of ion transport. Results of numerical experiments are interpreted within the theoretical model of a Cooper-pair insulator. The study suggests that radiation-induced changes in InOx films exposed to ion beams could significantly alter their current-voltage characteristics and that a transition to a metallic state is possible, due to radiation-induced perturbation of the fine-tuned granular structure. Furthermore, incident and displaced ions can break up enough Cooper pairs in InOx films to cause dissolution of this specific insulating state.

Focused ion beam (FIB) milling of electrically insulating specimens using simultaneous primary electron and ion beam irradiation

International Nuclear Information System (INIS)

Stokes, D J; Vystavel, T; Morrissey, F

2007-01-01

There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials

Beam-loss induced pressure rise of Large Hadron Collider collimator materials irradiated with 158  GeV/u In^{49+} ions at the CERN Super Proton Synchrotron

Directory of Open Access Journals (Sweden)

E. Mahner

2004-10-01

Full Text Available During heavy ion operation, large pressure rises, up to a few orders of magnitude, were observed at CERN, GSI, and BNL. The dynamic pressure rises were triggered by lost beam ions that impacted onto the vacuum chamber walls and desorbed about 10^{4} to 10^{7} molecules per ion. The deterioration of the dynamic vacuum conditions can enhance charge-exchange beam losses and can lead to beam instabilities or even to beam abortion triggered by vacuum interlocks. Consequently, a dedicated measurement of heavy-ion induced molecular desorption in the GeV/u energy range is important for Large Hadron Collider (LHC ion operation. In 2003, a desorption experiment was installed at the Super Proton Synchrotron to measure the beam-loss induced pressure rise of potential LHC collimator materials. Samples of bare graphite, sputter coated (Cu, TiZrV graphite, and 316 LN (low carbon with nitrogen stainless steel were irradiated under grazing angle with 158  GeV/u indium ions. After a description of the new experimental setup, the results of the pressure rise measurements are presented, and the derived desorption yields are compared with data from other experiments.

Highly efficient generation of ultraintense high-energy ion beams using laser-induced cavity pressure acceleration

Energy Technology Data Exchange (ETDEWEB)

Badziak, J.; Jablonski, S.; Raczka, P. [Institute of Plasma Physics and Laser Microfusion, Euratom Association, 01-497 Warsaw (Poland)

2012-08-20

Results of particle-in-cell (PIC) simulations of fast ion generation in the recently proposed laser-induced cavity pressure acceleration (LICPA) scheme in which a picosecond circularly polarized laser pulse of intensity {approx}10{sup 21} W/cm{sup 2} irradiates a carbon target placed in a cavity are presented. It is shown that due to circulation of the laser pulse in the cavity, the laser-ions energy conversion efficiency in the LICPA scheme is more than twice as high as that for the conventional (without a cavity) radiation pressure acceleration scheme and a quasi-monoenergetic carbon ion beam of the mean ion energy {approx}0.5 GeV and the energy fluence {approx}0.5 GJ/cm{sup 2} is produced with the efficiency {approx}40%. The results of PIC simulations are found to be in fairly good agreement with the predictions of the generalized light-sail model.

Ion beams in materials processing and analysis

CERN Document Server

Schmidt, Bernd

2012-01-01

This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.

Ion beam induced surface graphitization of CVD diamond for x-ray beam position monitor applications

International Nuclear Information System (INIS)

Liu, Chian; Shu, D.; Kuzay, T.M.; Wen, L.; Melendres, C.A.; Argonne National Lab., IL

1996-01-01

The Advanced Photon Source at ANL is a third-generation synchrotron facility that generates powerful x-ray beams on its undulator beamlines. It is important to know the position and angle of the x- ray beam during experiments. Due to very high heat flux levels, several patented x-ray beam position monitors (XBPM) exploiting chemical vapor deposition (CVD) diamond have been developed. These XBPMs have a thin layer of low-atomic-mass metallic coating so that photoemission from the x rays generate a minute but measurable current for position determination. Graphitization of the CVD diamond surface creates a very thin, intrinsic and conducting layer that can stand much higher temperatures and minimal x-ray transmission losses compared to the coated metallic layers. In this paper, a laboratory sputter ion source was used to transform selected surfaces of a CVD diamond substrate into graphite. The effect of 1-5 keV argon ion bombardment on CVD diamond surfaces at various target temperatures from 200 to 500 C was studied using Auger electron spectroscopy and in-situ electrical resistivity measurements. Graphitization after the ion bombardment has been confirmed and optimum conditions for graphitization studied. Raman spectroscopy was used to identify the overall diamond structure in the bulk of CVD diamond substrate after the ion bombardments. It was found that target temperature plays an important role in stability and electrical conductivity of the irradiated CVD diamonds

Heavy ion beams from the new Hungarian ECR ion source

International Nuclear Information System (INIS)

Biri, S.; Valek, A.; Ditroi, F.; Koivisto, H.; Arje, J.; Stiebing, K.; Schmidt, L.

1998-01-01

The first beams of highly charged ions in Hungary were obtained in fall of 1996. The new 14.5 GHz ECR ion source of ATOMKI produced beams of multiply charged ions with remarkable intensities at first experiments. Since then, numerous further developments were carried out. An external electrondonor electrode drastically increased the plasma density and, consequently, the intensity of highly charged ions. These upgrades concentrated mainly on beams from gaseous elements and were carried out by the ECRIS team of ATOMKI. Another series of experiments - ionising from solids - however, was done in the framework of an international collaboration. The first metal ion beam has been extracted from the ECRIS in November 1997 using the known method of Metal Ions from Volatile Compounds (MIVOC). The possibility to put the MIVOC chamber inside the ion source was also tested and the dosing regulation problem of metal vapours inside the ion source was solved. As a result, beams of more than 10 μA of highly charged Fe and Ni ions were produced. (author)

Lethal and mutagenic effects of ion beams and γ-rays in Aspergillus oryzae.

Science.gov (United States)

Toyoshima, Yoshiyuki; Takahashi, Akemi; Tanaka, Hisaki; Watanabe, Jun; Mogi, Yoshinobu; Yamazaki, Tatsuo; Hamada, Ryoko; Iwashita, Kazuhiro; Satoh, Katsuya; Narumi, Issay

2012-12-01

Aspergillus oryzae is a fungus that is used widely in traditional Japanese fermentation industries. In this study, the lethal and mutagenic effects of different linear energy transfer (LET) radiation in freeze-dried conidia of A. oryzae were investigated. The lethal effect, which was evaluated by a 90% lethal dose, was dependent on the LET value of the ionizing radiation. The most lethal ionizing radiation among that tested was (12)C(5+) ion beams with an LET of 121keV/μm. The (12)C(5+) ion beams had a 3.6-times higher lethal effect than low-LET (0.2keV/μm) γ-rays. The mutagenic effect was evaluated by the frequency of selenate resistant mutants. (12)C(6+) ion beams with an LET of 86keV/μm were the most effective in inducing selenate resistance. The mutant frequency following exposure to (12)C(6+) ion beams increased with an increase in dose and reached 3.47×10(-3) at 700Gy. In the dose range from 0 to 700Gy, (12)C(5+) ion beams were the second most effective in inducing selenate resistance, the mutant frequency of which reached a maximum peak (1.67×10(-3)) at 400Gy. To elucidate the characteristics of mutation induced by ionizing radiation, mutations in the sulphate permease gene (sB) and ATP sulfurylase gene (sC) loci, the loss of function of which results in a selenate resistant phenotype, were compared between (12)C(5+) ion beams and γ-rays. We detected all types of transversions and transitions. For frameshifts, the frequency of a +1 frameshift was the highest in all cases. Although the incidence of deletions >2bp was generally low, deletions >20bp were characteristic for (12)C(5+) ion beams. γ-rays had a tendency to generate mutants carrying a multitude of mutations in the same locus. Both forms of radiation also induced genome-wide large-scale mutations including chromosome rearrangements and large deletions. These results provide new basic insights into the mutation breeding of A. oryzae using ionizing radiation. Crown Copyright © 2012. Published

Intense non-relativistic cesium ion beam

International Nuclear Information System (INIS)

Lampel, M.C.

1984-02-01

The Heavy Ion Fusion group at Lawrence Berkeley Laboratory has constructed the One Ampere Cesium Injector as a proof of principle source to supply an induction linac with a high charge density and high brightness ion beam. This is studied here. An electron beam probe was developed as the major diagnostic tool for characterizing ion beam space charge. Electron beam probe data inversion is accomplished with the EBEAM code and a parametrically adjusted model radial charge distribution. The longitudinal charge distribution was not derived, although it is possible to do so. The radial charge distribution that is derived reveals an unexpected halo of trapped electrons surrounding the ion beam. A charge fluid theory of the effect of finite electron temperature on the focusing of neutralized ion beams (Nucl. Fus. 21, 529 (1981)) is applied to the problem of the Cesium beam final focus at the end of the injector. It is shown that the theory's predictions and assumptions are consistent with the experimental data, and that it accounts for the observed ion beam radius of approx. 5 cm, and the electron halo, including the determination of an electron Debye length of approx. 10 cm

Light-ion beam for microelectronic applications

International Nuclear Information System (INIS)

Hirsch, L.; Tardy, P.; Wantz, G.; Huby, N.; Moretto, P.; Serani, L.; Natali, F.; Damilano, B.; Duboz, J.Y.; Reverchon, J.L.

2005-01-01

In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue (λ = 450 nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10 deg. , 25 deg. and 50 deg. ). In a second part of the paper, ion beam induced charges study has been carried out, with a 2 MeV 4 He + micro-beam, on metal-semiconductor-metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes

Focused-ion-beam induced interfacial intermixing of magnetic bilayers for nanoscale control of magnetic properties

International Nuclear Information System (INIS)

Burn, D M; Atkinson, D; Hase, T P A

2014-01-01

Modification of the magnetic properties in a thin-film ferromagnetic/non-magnetic bilayer system by low-dose focused ion-beam (FIB) induced intermixing is demonstrated. The highly localized capability of FIB may be used to locally control magnetic behaviour at the nanoscale. The magnetic, electronic and structural properties of NiFe/Au bilayers were investigated as a function of the interfacial structure that was actively modified using focused Ga + ion irradiation. Experimental work used MOKE, SQUID, XMCD as well as magnetoresistance measurements to determine the magnetic behavior and grazing incidence x-ray reflectivity to elucidate the interfacial structure. Interfacial intermixing, induced by low-dose irradiation, is shown to lead to complex changes in the magnetic behavior that are associated with monotonic structural evolution of the interface. This behavior may be explained by changes in the local atomic environment within the interface region resulting in a combination of processes including the loss of moment on Ni and Fe, an induced moment on Au and modifications to the spin-orbit coupling between Au and NiFe. (paper)

Negative ion beam processes

International Nuclear Information System (INIS)

Hayward, T.D.; Lawrence, G.P.; Bentley, R.F.; Malanify, J.J.; Jackson, J.A.

1975-06-01

Los Alamos Scientific Laboratory fiscal year 1975 work on production of intense, very bright, negative hydrogen (H - ), ion beams and conversion of a high-energy (a few hundred MeV) negative beam into a neutral beam are described. The ion source work has used a cesium charge exchange source that has produced H - ion beams greater than or equal to 10 mA (about a factor of 10 greater than those available 1 yr ago) with a brightness of 1.4 x 10 9 A/m 2 -rad 2 (about 18 times brighter than before). The high-energy, neutral beam production investigations have included measurements of the 800-MeV H - -stripping cross section in hydrogen gas (sigma/sub -10/, tentatively 4 x 10 -19 cm 2 ), 3- to 6-MeV H - -stripping cross sections in a hydrogen plasma (sigma/sub -10/, tentatively 2 to 4 x 10 -16 cm 2 ), and the small-angle scattering that results from stripping an 800-MeV H - ion beam to a neutral (H 0 ) beam in hydrogen gas. These last measurements were interrupted by the Los Alamos Meson Physics Facility shutdown in December 1974, but should be completed early in fiscal year 1976 when the accelerator resumes operation. Small-angle scattering calculations have included hydrogen gas-stripping, plasma-stripping, and photodetachment. Calculations indicate that the root mean square angular spread of a 390-MeV negative triton (T - ) beam stripped in a plasma stripper may be as low as 0.7 μrad

Cornell electron beam ion source

International Nuclear Information System (INIS)

Kostroun, V.O.; Ghanbari, E.; Beebe, E.N.; Janson, S.W.

1981-01-01

An electron beam ion source (EBIS) for the production of low energy, multiply charged ion beams to be used in atomic physics experiments has been designed and constructed. An external high perveance electron gun is used to launch the electron beam into a conventional solenoid. Novel features of the design include a distributed sputter ion pump to create the ultrahigh vacuum environment in the ionization region of the source and microprocessor control of the axial trap voltage supplies

Pseudo ribbon metal ion beam source

International Nuclear Information System (INIS)

Stepanov, Igor B.; Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

2014-01-01

The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface

Pseudo ribbon metal ion beam source.

Science.gov (United States)

Stepanov, Igor B; Ryabchikov, Alexander I; Sivin, Denis O; Verigin, Dan A

2014-02-01

The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

Ion-beam Plasma Neutralization Interaction Images

Energy Technology Data Exchange (ETDEWEB)

Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

2002-04-09

Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented.

Ion-beam Plasma Neutralization Interaction Images

International Nuclear Information System (INIS)

Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

2002-04-01

Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented

Irradiation With Carbon Ion Beams Induces Apoptosis, Autophagy, and Cellular Senescence in a Human Glioma-Derived Cell Line

International Nuclear Information System (INIS)

Jinno-Oue, Atsushi; Shimizu, Nobuaki; Hamada, Nobuyuki; Wada, Seiichi; Tanaka, Atsushi; Shinagawa, Masahiko; Ohtsuki, Takahiro; Mori, Takahisa; Saha, Manujendra N.; Hoque, Ariful S.; Islam, Salequl; Kogure, Kimitaka; Funayama, Tomoo; Kobayashi, Yasuhiko

2010-01-01

Purpose: We examined biological responses of human glioma cells to irradiation with carbon ion beams (C-ions). Methods and Materials: A human glioma-derived cell line, NP-2, was irradiated with C-ions. Apoptotic cell nuclei were stained with Hoechst 33342. Induction of autophagy was examined either by staining cells with monodansylcadaverine (MDC) or by Western blotting to detect conversion of microtuble-associated protein light chain 3 (MAP-LC3) (LC3-I) to the membrane-bound form (LC3-II). Cellular senescence markers including induction of senescence-associated β-galactosidase (SA-β-gal) were examined. The mean telomere length of irradiated cells was determined by Southern blot hybridization. Expression of tumor suppressor p53 and cyclin/cyclin-dependent kinase inhibitor p21 WAF1/CIP1 in the irradiated cells was analyzed by Western blotting. Results: When NP-2 cells were irradiated with C-ions at 6 Gy, the major population of the cells died of apoptosis and autophagy. The residual fraction of attached cells ( WAF1/CIP1 was induced in NP-2 cells after irradiation. Furthermore, we found that irradiation with C-ions induced cellular senescence in a human glioma cell line lacking functional p53. Conclusions: Irradiation with C-ions induced apoptosis, autophagy, and cellular senescence in human glioma cells.

Cluster ion beam facilities

International Nuclear Information System (INIS)

Popok, V.N.; Prasalovich, S.V.; Odzhaev, V.B.; Campbell, E.E.B.

2001-01-01

A brief state-of-the-art review in the field of cluster-surface interactions is presented. Ionised cluster beams could become a powerful and versatile tool for the modification and processing of surfaces as an alternative to ion implantation and ion assisted deposition. The main effects of cluster-surface collisions and possible applications of cluster ion beams are discussed. The outlooks of the Cluster Implantation and Deposition Apparatus (CIDA) being developed in Guteborg University are shown

An electron cyclotron resonance ion source based low energy ion beam platform

International Nuclear Information System (INIS)

Sun, L. T.; Shang, Y.; Ma, B. H.; Zhang, X. Z.; Feng, Y. C.; Li, X. X.; Wang, H.; Guo, X. H.; Song, M. T.; Zhao, H. Y.; Zhang, Z. M.; Zhao, H. W.; Xie, D. Z.

2008-01-01

To satisfy the requirements of surface and atomic physics study in the field of low energy multiple charge state ion incident experiments, a low energy (10 eV/q-20 keV/q) ion beam platform is under design at IMP. A simple test bench has been set up to test the ion beam deceleration systems. Considering virtues such as structure simplicity, easy handling, compactness, cost saving, etc., an all-permanent magnet ECRIS LAPECR1 [Lanzhou all-permanent magnet electron cyclotron resonance (ECR) ion source No. 1] working at 14.5 GHz has been adopted to produce intense medium and low charge state ion beams. LAPECR1 source has already been ignited. Some intense low charge state ion beams have been produced on it, but the first test also reveals that many problems are existing on the ion beam transmission line. The ion beam transmission mismatches result in the depressed performance of LAPECR1, which will be discussed in this paper. To obtain ultralow energy ion beam, after being analyzed by a double-focusing analyzer magnet, the selected ion beam will be further decelerated by two afocal deceleration lens systems, which is still under design. This design has taken into consideration both ions slowing down and also ion beam focusing. In this paper, the conceptual design of deceleration system will be discussed

An electron cyclotron resonance ion source based low energy ion beam platform.

Science.gov (United States)

Sun, L T; Shang, Y; Ma, B H; Zhang, X Z; Feng, Y C; Li, X X; Wang, H; Guo, X H; Song, M T; Zhao, H Y; Zhang, Z M; Zhao, H W; Xie, D Z

2008-02-01

To satisfy the requirements of surface and atomic physics study in the field of low energy multiple charge state ion incident experiments, a low energy (10 eV/q-20 keV/q) ion beam platform is under design at IMP. A simple test bench has been set up to test the ion beam deceleration systems. Considering virtues such as structure simplicity, easy handling, compactness, cost saving, etc., an all-permanent magnet ECRIS LAPECR1 [Lanzhou all-permanent magnet electron cyclotron resonance (ECR) ion source No. 1] working at 14.5 GHz has been adopted to produce intense medium and low charge state ion beams. LAPECR1 source has already been ignited. Some intense low charge state ion beams have been produced on it, but the first test also reveals that many problems are existing on the ion beam transmission line. The ion beam transmission mismatches result in the depressed performance of LAPECR1, which will be discussed in this paper. To obtain ultralow energy ion beam, after being analyzed by a double-focusing analyzer magnet, the selected ion beam will be further decelerated by two afocal deceleration lens systems, which is still under design. This design has taken into consideration both ions slowing down and also ion beam focusing. In this paper, the conceptual design of deceleration system will be discussed.

Ion-beam-directed self-organization of conducting nanowire arrays

International Nuclear Information System (INIS)

Batzill, M.; Bardou, F.; Snowdon, K. J.

2001-01-01

Glancing-incidence ion-beam irradiation has been used both to ease kinetic constraints which otherwise restrict the establishment of long-range order and to impose external control on the orientation of nanowire arrays formed during stress-field-induced self-ordering of calcium atoms on a CaF 2 (111) surface. The arrays exhibit exceptional long-range order, with the long axis of the wires oriented along the azimuthal direction of ion-beam incidence. Transport measurements reveal a highly anisotropic electrical conductivity, whose maximum lies in the direction of the long axis of the 10.1-nm-period calcium wires

Non-invasive monitoring of therapeutic carbon ion beams in a homogeneous phantom by tracking of secondary ions

Science.gov (United States)

Gwosch, K.; Hartmann, B.; Jakubek, J.; Granja, C.; Soukup, P.; Jäkel, O.; Martišíková, M.

2013-06-01

Radiotherapy with narrow scanned carbon ion beams enables a highly accurate treatment of tumours while sparing the surrounding healthy tissue. Changes in the patient’s geometry can alter the actual ion range in tissue and result in unfavourable changes in the dose distribution. Consequently, it is desired to verify the actual beam delivery within the patient. Real-time and non-invasive measurement methods are preferable. Currently, the only technically feasible method to monitor the delivered dose distribution within the patient is based on tissue activation measurements by means of positron emission tomography (PET). An alternative monitoring method based on tracking of prompt secondary ions leaving a patient irradiated with carbon ion beams has been previously suggested. It is expected to help in overcoming the limitations of the PET-based technique like physiological washout of the beam induced activity, low signal and to allow for real-time measurements. In this paper, measurements of secondary charged particle tracks around a head-sized homogeneous PMMA phantom irradiated with pencil-like carbon ion beams are presented. The investigated energies and beam widths are within the therapeutically used range. The aim of the study is to deduce properties of the primary beam from the distribution of the secondary charged particles. Experiments were performed at the Heidelberg Ion Beam Therapy Center, Germany. The directions of secondary charged particles emerging from the PMMA phantom were measured using an arrangement of two parallel pixelated silicon detectors (Timepix). The distribution of the registered particle tracks was analysed to deduce its dependence on clinically important beam parameters: beam range, width and position. Distinct dependencies of the secondary particle tracks on the properties of the primary carbon ion beam were observed. In the particular experimental set-up used, beam range differences of 1.3 mm were detectable. In addition, variations

Broad beam ion sources and some surface processes

International Nuclear Information System (INIS)

Neumann, H.; Scholze, F.; Tarz, M.; Schindler, A.; Wiese, R.; Nestler, M.; Blum, T.

2005-01-01

Modern broad-beam multi-aperture ion sources are widely used in material and surface technology applications. Customizing the generated ion beam properties (i. e. the ion current density profile) for specific demands of the application is a main challenge in the improvement of the ion beam technologies. First we introduce ion sources based on different plasma excitation principles shortly. An overview of source plasma and ion beam measurement methods deliver input data for modelling methods. This beam profile modelling using numerical trajectory codes and the validation of the results by Faraday cup measurements as a basis for ion beam profile design are described. Furthermore possibilities for ex situ and in situ beam profile control are demonstrated, like a special method for in situ control of a linear ion source beam profile, a grid modification for circular beam profile design and a cluster principle for broad beam sources. By means of these methods, the beam shape may be adapted to specific technological demands. Examples of broad beam source application in ion beam figuring of optical surfaces, modification of stainless steel, photo voltaic processes and deposition of EUVL-multilayer stacks are finally presented. (Author)

Helium ion beam induced growth of hammerhead AFM probes

NARCIS (Netherlands)

Nanda, G.; Veldhoven, E. van; Maas, D.J.; Sadeghian Marnani, H.; Alkemade, P.F.A.

2015-01-01

The authors report the direct-write growth of hammerhead atomic force microscope (AFM) probes by He+ beam induced deposition of platinum-carbon. In order to grow a thin nanoneedle on top of a conventional AFM probe, the authors move a focused He+ beam during exposure to a PtC precursor gas. In the

Aberrations due to solenoid focusing of a multiply charged high-current ion beam

CERN Document Server

Grégoire, G; Lisi, N; Schnuriger, J C; Scrivens, R; Tambini, J

2000-01-01

At the output of a laser ion source, a high current of highly charged ions with a large range of charge states is available. The focusing of such a beam by magnetic elements causes a nonlinear space-charge field to develop which can induce large aberrations and emittance growth in the beam. Simulation of the beam from the CERN laser ion source will be presented for an ideal magnetic and electrostatic system using a radially symmetric model. In addition, the three dimensional software KOBRA3 is used for the simulation of the solenoid line. The results of these simulations will be compared with experiments performed on the CERN laser ion source with solenoids (resulting in a hollow beam) and a series of gridded electrostatic lenses. (5 refs).

Space-charge compensation of highly charged ion beam from laser ion source

International Nuclear Information System (INIS)

Kondrashev, S.A.; Collier, J.; Sherwood, T.R.

1996-01-01

The problem of matching an ion beam delivered by a high-intensity ion source with an accelerator is considered. The experimental results of highly charged ion beam transport with space-charge compensation by electrons are presented. A tungsten thermionic cathode is used as a source of electrons for beam compensation. An increase of ion beam current density by a factor of 25 is obtained as a result of space-charge compensation at a distance of 3 m from the extraction system. The process of ion beam space-charge compensation, requirements for a source of electrons, and the influence of recombination losses in a space-charge-compensated ion beam are discussed. (author)

Ion-beam nanopatterning: experimental results with chemically-assisted beam

Science.gov (United States)

Pochon, Sebastien C. R.

2018-03-01

The need for forming gratings (for example used in VR headsets) in materials such as SiO2 has seen a recent surge in the use of Ion beam etching techniques. However, when using an argon-only beam, the selectivity is limited as it is a physical process. Typically, gases such as CHF3, SF6, O2 and Cl2 can be added to argon in order to increase selectivity; depending on where the gas is injected, the process is known as Reactive Ion Beam Etching (RIBE) or Chemically Assisted Ion Beam Etching (CAIBE). The substrate holder can rotate in order to provide an axisymmetric etch rate profile. It can also be tilted over a range of angles to the beam direction. This enables control over the sidewall profile as well as radial uniformity optimisation. Ion beam directionality in conjunction with variable incident beam angle via platen angle setting enables profile control and feature shaping during nanopatterning. These hardware features unique to the Ion Beam etching methods can be used to create angled etch features. The CAIBE technique is also well suited to laser diode facet etch (for optoelectronic devices); these typically use III-V materials like InP. Here, we report on materials such as SiO2 etched without rotation and at a fixed platen angle allowing the formation of gratings and InP etched at a fixed angle with rotation allowing the formation of nanopillars and laser facets.

Direct deposition of gold on silicon with focused ion beams

Energy Technology Data Exchange (ETDEWEB)

Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

Maskless, resistless ion beam lithography

International Nuclear Information System (INIS)

Ji, Qing

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O 2 + , BF 2 + , P + etc., for surface modification and doping applications. With optimized source condition, around 85% of BF 2 + , over 90% of O 2 + and P + have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He + beam is as high as 440 A/cm 2 · Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O 2 + ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O 2 + ions with the dose of 10 15 cm -2 . The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P

Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: kawasegi@eng.u-toyama.ac.jp; Morita, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: nmorita@eng.u-toyama.ac.jp; Yamada, Shigeru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: syamada@eng.u-toyama.ac.jp; Takano, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: takano@eng.u-toyama.ac.jp; Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: ohyama@eng.u-toyama.ac.jp; Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kami, Kochi 782-8502 (Japan)]. E-mail: momota.sadao@kochi-tech.ac.jp; Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: junt@te.noda.tus.ac.jp; Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: iwao@te.noda.tus.ac.jp

2007-01-15

Ion beam lithography of a silicon surface using an Ar ion beam with an ion energy in the order of hundreds of keV is demonstrated in this study. A specially designed ion irradiation facility was employed that enabled generation and irradiation with a highly accelerated and highly charged Ar ion beam. An ion-beam-induced amorphous layer on a silicon substrate can be selectively etched in hydrofluoric acid, whereas, a non-irradiated area is scarcely etched and, consequently, a concave structure can be fabricated on the irradiated area. To control the depth of the structure, parameters for dependence of the depth on ion irradiation were investigated. As a result, the depth of irradiated area can be controlled by the ion energy that is adjusted by the acceleration voltage and the ion charge. In addition, the etch resistance of the irradiated area increases with an increase in ion energy due to the crystalline layer formed on the surface. Simulation results reveal that the depth is strongly related to the defect distribution induced by ion irradiation. These results indicate the potential use of this method for novel three-dimensional lithography.

Production of ion beam by conical pinched electron beam diode

International Nuclear Information System (INIS)

Matsukawa, Y.; Nakagawa, Y.

1982-01-01

Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)

Diffuse ions produced by electromagnetic ion beam instabilities

International Nuclear Information System (INIS)

Winske, D.; Leroy, M.M.

1984-01-01

The evolution of the electromagnetic ions beam instability driven by the reflected ion component backstreaming away from the earth's how shock into the foreshock region is studied by means computer simulation. The linear the quasi-linear states of the instability are found to be in good agreement with known results for the resonant model propagating parallel to the beam along the magnetic field and with theory developed in this paper for the nonresonant mode, which propagates antiparallel to the beam direction. The quasi-linear stage, which produces large amplitude 8Bapprox.B, sinusoidal transverse waves and ''intermediate'' ion distribution, is terminated by a nonlinear phase in which strongly nonlinear, compressive waves and ''diffuse'' ion distributions are produced. Additional processes by which the diffuse ions are accelerated to observed high energies are not addressed. The results are discussed in terms of the ion distributions and hydromagnetic waves observed in the foreshock of the earth's bow shock and of interplanetary shocks

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

International Nuclear Information System (INIS)

Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

2015-01-01

Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

Large area ion and plasma beam sources

Energy Technology Data Exchange (ETDEWEB)

Waldorf, J. [IPT Ionen- und Plasmatech. GmbH, Kaiserslautern (Germany)

1996-06-01

In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.).

Large area ion and plasma beam sources

International Nuclear Information System (INIS)

Waldorf, J.

1996-01-01

In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.)

A comparison of ion beam measurements by retarding field energy analyzer and laser induced fluorescence in helicon plasma devices

Energy Technology Data Exchange (ETDEWEB)

Gulbrandsen, N., E-mail: njal.gulbrandsen@uit.no; Fredriksen, Å. [Department of Physics and Technology, UiT The Arctic University of Norway, 9037 Tromsø (Norway); Carr, J. [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506 (United States); Department of Physics, Texas Lutheran University, Seguin, Texas 78155 (United States); Scime, E. [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506 (United States)

2015-03-15

Both Laser-Induced Fluorescence (LIF) and Retarding Field Energy Analyzers (RFEA) have been applied to the investigation of beams formed in inductively coupled helicon plasmas. While the LIF technique provides a direct measurement of the velocity distribution in the plasma, the RFEA measures ion flux as a function of a retarding potential. In this paper, we present a method to compare the two techniques, by converting the LIF velocity distribution to an equivalent of a RFEA measurement. We applied this method to compare new LIF and RFEA measurements in two different experiments; the Hot Helicon Experiment (HELIX) - Large Experiment on Instabilities and Anisotropies (LEIA) at West Virginia University and Njord at University of Tromsø. We find good agreement between beam energies of the two methods. In agreement with earlier observations, the RFEA is found to measure ion beams with densities too low for the LIF to resolve. In addition, we present measurements of the axial development of the ion beam in both experiments. Beam densities drop exponentially with distance from the source, both in LIF and RFEA measurements. The effective quenching cross section from LIF in LEIA is found to be σ{sub b,*}=4×10{sup −19} m{sup 2}, and the effective beam collisional cross sections by RFEA in Njord to be σ{sub b}=1.7×10{sup −18} m{sup 2}.

Study of the mechanisms of heavy-ion induced desorption on accelerator-relevant materials

International Nuclear Information System (INIS)

Bender, Markus

2008-01-01

The ion beam loss induced desorption is a performance limitation for low charge state heavy ion accelerators. If charge exchanged projectile ions get lost onto the beam pipe, desorption of gas is stimulated resulting in a pressure increase inside of the synchrotron and thus, a dramatically reduction of the beam life time. To minimize the amount of desorbed gas an experimental program has been started to measure the desorption yields (released gas molecules per incident ion) of various materials and different projectile ions. The present work is a contribution to the understanding of the physical processes behind the ion beam loss induced desorption. The yield measurements by the pressure rise method have been combined for the rst time with in situ ion beam analysis technologies such as ERDA and RBS. With this unique method the desorption behavior of a sample can be correlated to its surface and bulk properties. The performed experiments with 1,4 MeV/u Xenon-Ions show that the ion induced desorption is mainly a surface effect. Sputtered oxide layers or impurities do not contribute to the desorbed gas significantly. Nevertheless bulk properties play an important role in the desorption strength. Pure metallic samples desorb less gas than isolating materials under swift heavy ion irradiation. From the experimental results it was possible to estimate the desorption yields of various materials under ion bombardment by means of an extended inelastic thermal-spike-model. The extension is the combination of the thermal-spike's temperature map with thermal desorption. Within this model the ion induced desorption can be regarded as the release of adsorbates from a transient overheated spot on the samples surface around the ion impact. Finally a copper substrate with a gold coated surface was developed and proposed as a suitable material for a beam loss collimator with minimum desorption to ensure the performance of GSI's SIS18 in high current beam operation. (orig.)

Enhancement of CNT-based filters efficiency by ion beam irradiation

Science.gov (United States)

Elsehly, Emad M.; Chechenin, N. G.; Makunin, A. V.; Shemukhin, A. A.; Motaweh, H. A.

2018-05-01

It is shown in the report that disorder produced by ion beam irradiation can enhance the functionality of the carbon nanotubes. The filters of pressed multiwalled carbon nanotubes (MWNTs) were irradiated by He+ ions of the energy E = 80 keV with the fluence 2 × 1016 ion/cm2. The removal of manganese from aqueous solutions by using pristine and ion beam irradiated MWNTs filters was studied as a function of pH, initial concentration of manganese in aqueous solution, MWNT mass and contact time. The filters before and after filtration were characterized by Raman (RS) and energy dispersive X-ray spectroscopy (EDS) techniques to investigate the deposition content in the filter and defect formation in the MWNTs. The irradiated samples showed an enhancement of removal efficiency of manganese up to 97.5% for 10 ppm Mn concentration, suggesting that irradiated MWNT filter is a better Mn adsorbent from aqueous solutions than the pristine one. Radiation-induced chemical functionalization of MWNTs due to ion beam irradiation, suggesting that complexation between the irradiated MWNTs and manganese ions is another mechanism. This conclusion is supported by EDS and RS and is correlated with a larger disorder in the irradiated samples as follows from RS. The study demonstrates that ion beam irradiation is a promising tool to enhance the filtration efficiency of MWNT filters.

Ion-beam texturing of uniaxially textured Ni films

International Nuclear Information System (INIS)

Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

2005-01-01

The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth

Impurity mapping in sulphide minerals using Time-resolved Ion Beam Induced Current imaging

International Nuclear Information System (INIS)

Laird, Jamie S.; Johnson, Brett C.; Ganesan, Kumaravelu; Kandasamy, Sasikaran; Davidson, Garry; Borg, Stacey; Ryan, Chris G.

2010-01-01

The semiconducting properties and charge transport within natural minerals like pyrite are postulated to drive certain geochemical processes which can lead to precious metal ore genesis. In this paper we outline electrical measurements on mineral samples and present spatio-temporally resolved Ion Beam Induced Charge or Current studies on a Schottky pyrite junction. Au-Schottky contacts were fabricated in regions selected by thermoelectric and 4-point probe resistivity measurements. The complexity in charge transport due to impurity variations results in imaging contrast which is deemed important for fluid electrochemistry. The relevance of understanding charge collection in pyrite in the context of complex geochemical processes is briefly discussed.

Ion beam induced epitaxy in Ge- and B- coimplanted silicon

International Nuclear Information System (INIS)

Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

1992-01-01

The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

Beam losses in heavy ion drivers

CERN Document Server

Mustafin, E R; Hofmann, I; Spiller, P J

2002-01-01

While beam loss issues have hardly been considered in detail for heavy ion fusion scenarios, recent heavy ion machine developments in different labs (European Organization for Nuclear Research (CERN), Gesellschaft fur Schwerionenforschung (GSI), Institute for Theoretical and Experimental Physics (ITEP), Relativistic Heavy-Ion Collider (RHIC)) have shown the great importance of beam current limitations due to ion losses. Two aspects of beam losses in heavy ion accelerators are theoretically considered: (1) secondary neutron production due to lost ions, and (2) vacuum pressure instability due to charge exchange losses. Calculations are compared and found to be in good agreement with measured data. The application to a Heavy-Ion Driven Inertial Fusion (HIDIF) scenario is discussed. 12 Refs.

Ion source for ion beam deposition employing a novel electrode assembly

Science.gov (United States)

Hayes, A. V.; Kanarov, V.; Yevtukhov, R.; Hegde, H.; Druz, B.; Yakovlevitch, D.; Cheesman, W.; Mirkov, V.

2000-02-01

A rf inductively coupled ion source employing a novel electrode assembly for focusing a broad ion beam on a relatively small target area was developed. The primary application of this ion source is the deposition of thin films used in the fabrication of magnetic sensors and optical devices. The ion optics consists of a three-electrode set of multiaperture concave dished grids with a beam extraction diameter of 150 mm. Also described is a variation in the design providing a beam extraction diameter of 120 mm. Grid hole diameters and grid spacing were optimized for low beamlet divergence and low grid impingement currents. The radius of curvature of the grids was optimized to obtain an optimally focused ion beam at the target location. A novel grid fabrication and mounting design was employed which overcomes typical limitations of such grid assemblies, particularly in terms of maintaining optimum beam focusing conditions after multiple cycles of operation. Ion beam generation with argon and xenon gases in energy ranges from 0.3 to 2.0 keV was characterized. For operation with argon gas, beam currents greater than 0.5 A were obtained with a beam energy of 800 eV. At optimal beam formation conditions, beam profiles at distances about equal to the radius of curvature were found to be close to Gaussian, with 99.9% of the beam current located within a 150 mm target diameter. Repeatability of the beam profile over long periods of operation is also reported.

Maskless, resistless ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Ji, Qing [Univ. of California, Berkeley, CA (United States)

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O₂⁺, BF₂⁺, P⁺ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF₂⁺, over 90% of O₂⁺ and P⁺ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He⁺ beam is as high as 440 A/cm² • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O₂⁺ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O₂⁺ ions with the dose of 10¹⁵ cm^-2. The oxide can then serve as a hard mask for patterning of the Si film. The

Relativistically Induced Transparency Acceleration (RITA) - laser-plasma accelerated quasi-monoenergetic GeV ion-beams with existing lasers?

Science.gov (United States)

Sahai, Aakash A.

2013-10-01

Laser-plasma ion accelerators have the potential to produce beams with unprecedented characteristics of ultra-short bunch lengths (100s of fs) and high bunch-charge (1010 particles) over acceleration length of about 100 microns. However, creating and controlling mono-energetic bunches while accelerating to high-energies has been a challenge. If high-energy mono-energetic beams can be demonstrated with minimal post-processing, laser (ω0)-plasma (ωpe) ion accelerators may be used in a wide-range of applications such as cancer hadron-therapy, medical isotope production, neutron generation, radiography and high-energy density science. Here we demonstrate using analysis and simulations that using relativistic intensity laser-pulses and heavy-ion (Mi ×me) targets doped with a proton (or light-ion) species (mp ×me) of trace density (at least an order of magnitude below the cold critical density) we can scale up the energy of quasi-mono-energetically accelerated proton (or light-ion) beams while controlling their energy, charge and energy spectrum. This is achieved by controlling the laser propagation into an overdense (ω0 RITA). Desired proton or light-ion energies can be achieved by controlling the velocity of the snowplow, which is shown to scale inversely with the rise-time of the laser (higher energies for shorter pulses) and directly with the scale-length of the plasma density gradient. Similar acceleration can be produced by controlling the increase of the laser frequency (Chirp Induced Transparency Acceleration, ChITA). Work supported by the National Science Foundation under NSF- PHY-0936278. Also, NSF-PHY-0936266 and NSF-PHY-0903039; the US Department of Energy under DEFC02-07ER41500, DE- FG02-92ER40727 and DE-FG52-09NA29552.

Ion Beam Extraction by Discrete Ion Focusing

DEFF Research Database (Denmark)

2010-01-01

An apparatus (900) and methods are disclosed for ion beam extraction. In an implementation, the apparatus includes a plasma source (or plasma) (802) and an ion extractor (804). The plasma source is adapted to generate ions and the ion extractor is immersed in the plasma source to extract a fracti...

ECR ion source based low energy ion beam facility

Indian Academy of Sciences (India)

Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion ...

Intense pulsed heavy ion beam technology

International Nuclear Information System (INIS)

Masugata, Katsumi; Ito, Hiroaki

2010-01-01

Development of intense pulsed heavy ion beam accelerator technology is described for the application of materials processing. Gas puff plasma gun and vacuum arc discharge plasma gun were developed as an active ion source for magnetically insulated pulsed ion diode. Source plasma of nitrogen and aluminum were successfully produced with the gas puff plasma gun and the vacuum arc plasma gun, respectively. The ion diode was successfully operated with gas puff plasma gun at diode voltage 190 kV, diode current 2.2 kA and nitrogen ion beam of ion current density 27 A/cm 2 was obtained. The ion composition was evaluated by a Thomson parabola spectrometer and the purity of the nitrogen ion beam was estimated to be 86%. The diode also operated with aluminum ion source of vacuum arc plasma gun. The ion diode was operated at 200 kV, 12 kA, and aluminum ion beam of current density 230 A/cm 2 was obtained. The beam consists of aluminum ions (Al (1-3)+ ) of energy 60-400 keV, and protons (90-130 keV), and the purity was estimated to be 89%. The development of the bipolar pulse accelerator (BPA) was reported. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. The generator was tested with dummy load of 7.5 ohm, bipolar pulses of -138 kV, 72 ns (1st pulse) and +130 kV, 70 ns (2nd pulse) were successively generated. By applying the bipolar pulse to the drift tube of the BPA, nitrogen ion beam of 2 A/cm 2 was observed in the cathode, which suggests the bipolar pulse acceleration. (author)

Bayesian analysis of ion beam diagnostics

International Nuclear Information System (INIS)

Toussaint, U. von; Fischer, R.; Dose, V.

2001-01-01

Ion beam diagnostics are routinely used for quantitative analysis of the surface composition of mixture materials up to a depth of a few μm. Unfortunately, advantageous properties of the diagnostics, like high depth resolution in combination with a large penetration depth, no destruction of the surface, high sensitivity for large as well as for small atomic numbers, and high sensitivity are mutually exclusive. Among other things, this is due to the ill-conditioned inverse problem of reconstructing depth distributions of the composition elements. Robust results for depth distributions are obtained with adaptive methods in the framework of Bayesian probability theory. The method of adaptive kernels allows for distributions which contain only the significant information of the data while noise fitting is avoided. This is achieved by adaptively reducing the degrees of freedom supporting the distribution. As applications for ion beam diagnostics Rutherford backscattering spectroscopy and particle induced X-ray emission are shown

Ion-beam-induced aggregation in polystyrene: The influence of the molecular parameters

International Nuclear Information System (INIS)

Puglisi, O.; Licciardello, A.; Calcagno, L.; Foti, G.

1988-01-01

The formation of an insoluble gel under ion-beam bombardment is governed by ion-beam parameters and target parameters. Here reported is a study of the influence of the target molecular parameters on the sol--gel transition of ion-bombarded polystyrene with particular emphasis for the number-average molecular weight M-bar/sub n/. It is shown that the main parameter is the number of macromolcules of the film so that by adopting a ''corrected'' fluence F/n (ions per macromolecule), the different curves of the various polymers collapse in only one universal curve. The importance of the ''corrected'' fluence is shown also at molecular level and the MWD of the various polymers is similar at equal F/n values. An experimental model is outlined which explains the sol--gel transition on the basis of transition from an isolated-track regime to an overlap regime where the formation of insoluble giant macromolecules occurs

MeV single-ion beam irradiation of mammalian cells using the Surrey vertical nanobeam, compared with broad proton beam and X-ray irradiations

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Jeynes, J.C.G.; Merchant, M.J.; Kirkby, K.; Kirkby, N. [Surrey Ion Beam Center, Faculty of Engineering and Physical Science, University of Surrey, Guildford Surrey, GU2 7XH (United Kingdom); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: •Recently completed nanobeam at the Surrey Ion Beam Centre was used. •3.8-MeV single and broad proton beams irradiated Chinese hamster cells. •Cell survival curves were measured and compared with 300-kV X-ray irradiation. •Single ion irradiation had a lower survival part at ultra-low dose. •It implies hypersensitivity, bystander effect and cell cycle phase of cell death. -- Abstract: As a part of a systematic study on mechanisms involved in physical cancer therapies, this work investigated response of mammalian cells to ultra-low-dose ion beam irradiation. The ion beam irradiation was performed using the recently completed nanobeam facility at the Surrey Ion Beam Centre. A scanning focused vertical ion nano-beam was applied to irradiate Chinese hamster V79 cells. The V79 cells were irradiated in two different beam modes, namely, focused single ion beam and defocused scanning broad ion beam of 3.8-MeV protons. The single ion beam was capable of irradiating a single cell with a precisely controlled number of the ions to extremely low doses. After irradiation and cell incubation, the number of surviving colonies as a function of the number of the irradiating ions was measured for the cell survival fraction curve. A lower survival for the single ion beam irradiation than that of the broad beam case implied the hypersensitivity and bystander effect. The ion-beam-induced cell survival curves were compared with that from 300-kV X-ray irradiation. Theoretical studies indicated that the cell death in single ion irradiation mainly occurred in the cell cycle phases of cell division and intervals between the cell division and the DNA replication. The success in the experiment demonstrated the Surrey vertical nanobeam successfully completed.

Characterization of ion-beam mixed multilayers via grazing x-ray reflectometry

International Nuclear Information System (INIS)

Le Boite, M.G.; Traverse, A.; Nevot, L.; Pardo, B.; Corno, J.

1988-01-01

The grazing x-ray reflectrometry technique was used as a way to study modifications in metallic multilayers induced by ion-beam irradiation. Due to the high sensitivity of the technique, short-range atomic displacements of an atom A in a layer B can be detected so that the first stages of ion-beam mixing can be investigated. The rate of mixing is measured and the compound A/sub 1-//sub x/B/sub x/ formed at the layers' interfaces is characterized

Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers

Energy Technology Data Exchange (ETDEWEB)

Grenzer, J.; Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany); Biermanns, A.; Grigorian, S.A.; Pietsch, U. [Institute of Physics, University of Siegen (Germany)

2009-08-15

We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60 keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth-resolved X-ray grazing incidence diffraction (GID). Additionally, cross-section TEM investigations were carried out. The ripple-like structures are formed at the sample surface as well as at the buried amorphous-crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the (111) planes. The quality decreases rapidly if the direction of the ion beam deviates from (111). (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Investigation of the depth profile of ion beam induced nanopatterns on Si with simultaneous metal incorporation

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, Behnam; Arezki, Bahia; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Siegen (Germany); Cornejo, Marina; Frost, Frank [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

2011-07-01

Ion beam sputtering of semiconductor surfaces can modify the surface and produce a diversity of surface topographies such as periodic ripples or dot structures depended on sputtering parameters. Well ordered nanostructured surfaces have widely technological applications. Recent experiments have shown that the incorporation of metallic impurity atoms during the sputtering process plays a crucial role in pattern formation on the surfaces. These findings offer a new degree of freedom to control pattern formation. In this contribution we report on surface patterning due to Kr ion beam erosion on silicon surfaces with simultaneous Fe and Cr incorporation. We used X-ray reflectivity (XRR) to determine the depth profiles of metal ions as function of ion beam divergence angles and the mean incidence angle of the ions with respect to the surface normal. Depth profiles are correlated with degree of pattern formation determined by AFM. We show that the mean penetration depth and concentration of metal ions depends on the divergence angle of Kr beam provided by Kaufman source which supports the assumption that metal ions are created due to parasitic interaction of the Kr beam with the steel plate lining. The evaluated depth profile by XRR is in good agreement with SIMS and RBS results.

Consideration of beam plasma ion-source

International Nuclear Information System (INIS)

Sano, Fumimichi; Kusano, Norimasa; Ishida, Yoshihiro; Ishikawa, Junzo; Takagi, Toshinori

1976-01-01

Theoretical and experimental analyses and their comparison were made on the plasma generation and on the beam extraction for the beam plasma ion-source. The operational principle and the structure of the ion-source are explained in the first part. Considerations are given on the electron beam-plasma interaction and the resulting generation of high frequency or microwaves which in turn increases the plasma density. The flow of energy in this system is also explained in the second part. The relation between plasma density and the imaginary part of frequency is given by taking the magnetic flux density, the electron beam energy, and the electron beam current as parameters. The relations between the potential difference between collector and drift tube and the plasma density or the ion-current are also given. Considerations are also given to the change of the plasma density due to the change of the magnetic flux density at drift tube, the change of the electron beam energy, and the change of the electron beam current. The third part deals with the extraction characteristics of the ion beam. The structure of the multiple-aperture electrode and the relation between plasma density and the extracted ion current are explained. (Aoki, K.)

Laser induced fluorescence of trapped molecular ions

Energy Technology Data Exchange (ETDEWEB)

Grieman, F.J.

1979-10-01

An experimental apparatus for obtaining the optical spectra of molecular ions is described. The experimental technique includes the use of three dimensional ion trapping, laser induced fluorescence, and gated photon counting methods. The ions, which are produced by electron impact, are confined in a radio-frequency quadrupole ion trap of cylindrical design. Because the quadrupole ion trap allows mass selection of the molecular ion desired for study, the analysis of the spectra obtained is greatly simplified. The ion trap also confines the ions to a region easily probed by a laser beam. 18 references.

Laser induced fluorescence of trapped molecular ions

International Nuclear Information System (INIS)

Grieman, F.J.

1979-10-01

An experimental apparatus for obtaining the optical spectra of molecular ions is described. The experimental technique includes the use of three dimensional ion trapping, laser induced fluorescence, and gated photon counting methods. The ions, which are produced by electron impact, are confined in a radio-frequency quadrupole ion trap of cylindrical design. Because the quadrupole ion trap allows mass selection of the molecular ion desired for study, the analysis of the spectra obtained is greatly simplified. The ion trap also confines the ions to a region easily probed by a laser beam. 18 references

Modified betatron for ion beam fusion

International Nuclear Information System (INIS)

Rostoker, N.; Fisher, A.

1986-01-01

An intense neutralized ion beam can be injected and trapped in magnetic mirror or tokamak geometry. The details of the process involve beam polarization so that the beam crosses the fringing fields without deflection and draining the polarization when the beam reaches the plasma. Equilibrium requires that a large betatron field be added in tokamak geometry. In mirror geometry a toroidal field must be added by means of a current along the mirror axis. In either case, the geometry becomes that of the modified betatron which has been studied experimentally and theoretically in recent years. We consider beams of d and t ions with a mean energy of 500 kev and a temperature of about 50 kev. The plasma may be a proton plasma with cold ions. It is only necessary for beam trapping or to carry currents. The ion energy for slowing down is initially 500 kev and thermonuclear reactions depend only on the beam temperature of 50 kev which changes very slowly. This new configuration for magnetic confinement fusion leads to an energy gain of 10--20 for d-t reactions whereas previous studies of beam target interaction predicted a maximum energy gain of 3--4. The high beam energy available with pulsed ion diode technology is also essential for advanced fuels. 16 refs., 3 figs

Development of the Holifield Radioactive Ion Beam Facility

International Nuclear Information System (INIS)

Tatum, B.A.

1997-01-01

The Holifield Radioactive Ion Beam Facility (HRIBF) construction project has been completed and the first radioactive ion beam has been successfully accelerated. The project, which began in 1992, has involved numerous facility modifications. The Oak Ridge Isochronous Cyclotron has been converted from an energy booster for heavy ion beams to a light ion accelerator with internal ion source. A target-ion source and mass analysis system have been commissioned as key components of the facility's radioactive ion beam injector to the 25MV tandem electrostatic accelerator. Beam transport lines have been completed, and new diagnostics for very low intensity beams have been developed. Work continues on a unified control system. Development of research quality radioactive beams for the nuclear structure and nuclear astrophysics communities continues. This paper details facility development to date

Generation and focusing of intense ion beams with an inverse pinch ion diode

International Nuclear Information System (INIS)

Hashimoto, Yoshiyuki; Sato, Morihiko; Yatsuzuka, Mitsuyasu; Nobuhara, Sadao

1992-01-01

Generation and focusing of ion beams using an inverse pinch ion diode with a flat anode has been studied. The ion beams generated with the inverse pinch ion diode were found to be focused at 120 mm from the anode by the electrostatic field in the diode. The energy and maximum current density of the ion beams were 180 keV and 420 A/cm 2 , respectively. The focusing angle of the ion beams was 4.3deg. The beam brightness was estimated to be 1.3 GW/cm 2 ·rad 2 . The focusing distance of the ion beams was found to be controllable by changing the diameters of the anode and cathode. (author)

Applications of ion beam analysis workshop. Workshop handbook

International Nuclear Information System (INIS)

1995-01-01

A workshop on applications of ion beam analysis was held at ANSTO, immediate prior to the IBMM-95 Conference in Canberra. It aims was to review developments and current status on use of ion beams for analysis, emphasizing the following aspects: fundamental ion beam research and secondary effects of ion beams; material sciences, geological, life sciences, environmental and industrial applications; computing codes for use in accelerator research; high energy heavy ion scattering and recoil; recent technological development using ion beams. The handbook contains the workshop's program, 29 abstracts and a list of participants

Cooled heavy ion beams at the ESR

International Nuclear Information System (INIS)

Steck, M.; Beckert, K.; Bosch, F.; Eickhoff, H.; Franzke, B.; Klepper, O.; Nolden, F.; Reich, H.; Schlitt, B.; Spaedtke, P.; Winkler, T.

1996-01-01

The storage ring ESR has been used in various operational modes for experiments with electron cooled heavy ion beams. Besides the standard storage mode including injection and beam accumulation the deceleration of highly charged ions has been demonstrated. Beams of highly charged ions have been injected and accumulated and finally decelerated to a minimum energy of 50 MeV/u. An ultraslow extraction method using charge changing processes is now also available for cooled beams of highly charged ions. For in ring experiments the internal gas jet and the cold electron beam of the cooling system are applied as targets. High precision mass spectrometry by Schottky noise detection has been demonstrated. Operation at transition energy has been achieved with cooled beams opening the field for experiments which require an isochronous revolution of the ions. (orig.)

A beam profile monitor for heavy ion beams at high impact energies

International Nuclear Information System (INIS)

Hausmann, A.; Stiebing, K.E.; Bethge, K.; Froehlich, O.; Koehler, E.; Mueller, A.; Rueschmann, G.

1994-01-01

A beam profile monitor for heavy ion beams has been developed for the use in experiments at the Heavy Ion Synchrotron SIS at Gesellschaft fuer Schwerionenforschung Darmstadt (GSI). Four thin scintillation fibres are mounted on one wheel and scan the ion beam sequentially in two linearly independent directions. They are read out via one single photomultiplier common to all four fibres into one time spectrum, which provides all information about beam position, beam extension, time structure and lateral homogeneity of the beam. The system operates in a wide dynamic range of beam intensities. ((orig.))

Intense beams of light ions

International Nuclear Information System (INIS)

Camarcat, Noel

1985-01-01

Results of experiments performed in order to accelerate intense beams of light and heavier ions are presented. The accelerating diodes are driven by existing pulsed power generators. Optimization of the generator structure is described in chapter I. Nuclear diagnostics of the accelerated light ion beams are presented in chapter II. Chapter III deals with the physics of intense charged particle beams. The models developed are applied to the calculation of the performances of the ion diodes described in the previous chapters. Chapter IV reports preliminary results on a multiply ionized carbon source driven by a 0.1 TW pulsed power generator. (author) [fr

Constraints on ion beam handling for intersecting beam experiments

International Nuclear Information System (INIS)

Kruse, T.

1981-01-01

The intense synchrotron radiation beams from the NSLS uv or x-ray storage rings still do not compare in monochromatized photon flux with a laser beam, a fact which becomes apparent in considering reaction rates for interaction of photon and ion beams. There are two prototypical interaction geometries, parallel and perpendicular. Calculations should properly be done in the rest frame of the ion beam; however, expected beta values are small, so the lab frame will be employed and aberration and Doppler shift effects neglected

Measurement of ultra-low ion energy of decelerated ion beam using a deflecting electric field

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2015-12-15

In investigation on ultra-low-energy ion bombardment effect on DNA, an ion beam deceleration lens was developed for high-quality ultra-low-energy ion beam. Measurement of the ion energy after deceleration was necessary to confirm the ion beam really decelerated as theoretically predicted. In contrast to conventional methods, this work used a simple deflecting electrostatic field after the deceleration lens to bend the ion beam. The beam bending distance depended on the ion energy and was described and simulated. A system for the measurement of the ion beam energy was constructed. It consisted of a pair of parallel electrode plates to generate the deflecting electrical field, a copper rod measurement piece to detect ion beam current, a vernier caliper to mark the beam position, a stepping motor to translate the measurement rod, and a webcam-camera to read the beam bending distance. The entire system was installed after the ion-beam deceleration lens inside the large chamber of the bioengineering vertical ion beam line. Moving the measurement rod across the decelerated ion beam enabled to obtain beam profiles, from which the beam bending distance could be known and the ion beam energy could be calculated. The measurement results were in good agreement with theoretical and simulated results.

Ion beam analysis

International Nuclear Information System (INIS)

Bethge, K.

1995-01-01

Full text: Ion beam analysis is an accelerator application area for the study of materials and the structure of matter; electrostatic accelerators of the Van de Graaff or Dynamitron type are often used for energies up to a few MeV. Two types of machines are available - the single-ended accelerator type with higher beam currents and greater flexibility of beam management, or the tandem accelerator, limited to atomic species with negative ions. The accelerators are not generally installed at specialist accelerator laboratories and have to be easy to maintain and simple to operate. The most common technique for industrial research is Rutherford Back Scattering Spectrometry (RBS). Helium ions are the preferred projectiles, since at elevated energies (above 3 MeV) nuclear resonance scattering can be used to detect photons associated with target molecules containing elements such as carbon, nitrogen or oxygen. Due to the large amount of available data on nuclear reactions in this energy range, activation analysis (detecting trace elements by irradiating the sample) can be performed with charged particles from accelerators over a wider range of atoms than with the conventional use of neutrons, which is more suited to light elements. Resonance reactions have been used to detect trace metals such as aluminium, titanium and vanadium. Hydrogen atoms are vital to the material performance of several classes of materials, such as semiconductors, insulators and ceramics. Prudent selection of the projectile ion aids the analysis of hydrogen composition; the technique is then a simple measurement of the emitted gamma radiation. Solar cell material and glass can be analysed in this way. On a world-wide basis, numerous laboratories perform ion beam analysis for research purposes; considerable work is carried out in cooperation between scientific laboratories and industry, but only a few laboratories provide a completely commercial service

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Matsui, T. [Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Aikoh, K. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Sakamaki, M.; Amemiya, K. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Iwase, A. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

2015-12-15

Surface ferromagnetic state of FeRh thin films irradiated with 1 keV Ar ion-beam has been investigated by using soft X-ray Magnetic Circular Dichroism (XMCD). It was revealed that the Fe atoms of the samples were strongly spin-polarized after Ar ion-beam irradiation. Due to its small penetration depth, 1 keV Ar ion-beam irradiation can modify the magnetic state at subsurface of the samples. In accordance with the XMCD sum rule analysis, the main component of the irradiation induced ferromagnetism at the FeRh film surface was to be effective spin magnetic moment, and not to be orbital moment. We also confirmed that the surface ferromagnetic state could be produced by thermal annealing of the excessively ion irradiated paramagnetic subsurface of the FeRh thin films. This novel magnetic modification technique by using ion irradiation and subsequent annealing can be a potential tool to control the surface magnetic state of FeRh thin films.

Intense ion beams for inertial confinement fusion

International Nuclear Information System (INIS)

Mehlhorn, T.A.

1997-01-01

Intense beams of light of heavy ions are being studied as inertial confinement fusion (ICF) drivers for high yield and energy. Heavy and light ions have common interests in beam transport, targets, and alternative accelerators. Self-pinched transport is being jointly studied. This article reviews the development of intense ion beams for ICF. Light-ion drivers are highlighted because they are compact, modular, efficient and low cost. Issues facing light ions are: (1) decreasing beam divergence; (2) increasing beam brightness; and (3) demonstrating self-pinched transport. Applied-B ion diodes are favored because of efficiency, beam brightness, perceived scalability, achievable focal intensity, and multistage capability. A light-ion concept addressing these issues uses: (1) an injector divergence of ≤ 24 mrad at 9 MeV; (2) two-stage acceleration to reduce divergence to ≤ 12 mrad at 35 MeV; and (3) self-pinched transport accepting divergences up to 12 mrad. Substantial progress in ion-driven target physics and repetitive ion diode technology is also presented. Z-pinch drivers are being pursued as the shortest pulsed power path to target physics experiments and high-yield fusion. However, light ions remain the pulsed power ICF driver of choice for high-yield fusion energy applications that require driver standoff and repetitive operation. 100 refs

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

International Nuclear Information System (INIS)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L.D.

2012-01-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10 15 to 10 16 ions/cm 2 . The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

Analysis of the degradation induced by focused ion Ga3+ beam for the realization of piezoelectric nanostructures

International Nuclear Information System (INIS)

Remiens, D.; Liang, R. H.; Soyer, C.; Deresmes, D.; Troadec, D.; Quignon, S.; Da Costa, A.; Desfeux, R.

2010-01-01

Piezoelectric nanostructures (islands of dimensions in the lateral size range 50-500 nm) have been fabricated by focused Ga 3+ ion beam (FIB) etching on PbZr 0.54 Ti 0.46 O 3 thin films obtained by magnetron sputtering. The degradation induced by the etching process is investigated through the evolution of electromechanical activity measured by means of local piezoelectric hysteresis loops produced by piezoresponse force microscopy. The analysis of surface potential is performed by kelvin force microscopy and the measurement of current-voltage curves is carried out by conducting atomic force microscopy. Two kinds of structures, namely one based on crystallized films and the other based on amorphous ones, were studied. In this latter case, the amorphous films are postannealed after etching to obtain crystallized structure. For the structures based on the crystallized and then etched films, no piezoelectric signal was registered that evidences a serious degradation of material induced by Ga 3+ ion implantation. For the structures based on the films etched in amorphous state and then crystallized, the piezoresponse signal was near to that of the reference films (crystallized and not etched) whatever were the ion dose and the island dimensions. Even for very small lateral size (50 nm), no size effect was observed. The island shapes fabricated by Ga 3+ FIB etching process (islands with less than 50 nm lateral size) show a limitation of FIB processing and electron beam lithography seems to be necessary.

Mutation induction by ion beams in higher plants

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

2003-04-01

This review mainly describes study results obtained in the Takasaki ion-beam (IB) irradiation facility (TIARA) on the mutation induction in higher plants. Biological effects like lethality and on budding of IBs (carbon, Ne and Ar) are discussed in relation with their linear energy transfer (LET), relative biological effectiveness and the developmental states in shepherd's-purse and tobacco. Induced mutation by IB are characterized by those findings that the mutation rate by C beam is 1.9 x 10{sup -6}, being 17 times higher than the electron beam, in the shepherd's-purse, that C beam induces larger structural changes than electron beam when examined by molecular mechanism of tt and gl gene mutations, and that mutation spectrum of IB is different from that of {gamma}-ray and is wider. Novel mutants are described on shepherd's-purse (pigment mutants, ultraviolet (UV)-resistant and sensitive ones, and flowering ones), disease-resistant rice, barley and tobacco plants, and flowering plants. IB mutation is possibly useful for solving the problems of environment and foods in future. (N.I.)

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Science.gov (United States)

Semsang, Nuananong; Yu, LiangDeng

2013-07-01

Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Structural and magnetic properties of ion-beam bombarded Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Lin, K.W.; Guo, J.Y.; Lin, S.R.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Tsai, C.J. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300 (China); Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

2007-12-15

A series of [Pt(2 nm)/Co(2 nm)]{sub 10}/Pt(30 nm) multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt{sub 3} phases were developed with increasing End-Hall voltage (V{sub EH}) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing V{sub EH}. After annealing, the formation of CoPt{sub 3} was observed in these ion-beam bombarded samples, resulting in lower coercivities (H{sub c}{proportional_to} 50 Oe). The depressed transition temperature of CoPt{sub 3} for films deposited with the largest V{sub EH} was attributed to distorted CoPt{sub 3} structures that appeared with annealing. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Evaluation of Negative-Ion-Beam Driver Concepts for Heavy Ion Fusion

International Nuclear Information System (INIS)

Grisham, Larry R.

2002-01-01

We evaluate the feasibility of producing and using atomically neutral heavy ion beams produced from negative ions as drivers for an inertial confinement fusion reactor. Bromine and iodine appear to be the most attractive elements for the driver beams. Fluorine and chlorine appear to be the most appropriate feedstocks for initial tests of extractable negative ion current densities. With regards to ion sources, photodetachment neutralizers, and vacuum requirements for accelerators and beam transport, this approach appears feasible within existing technology, and the vacuum requirements are essentially identical to those for positive ion drivers except in the target chamber. The principal constraint is that this approach requires harder vacuums in the target chamber than do space-charge-neutralized positive ion drivers. With realistic (but perhaps pessimistic) estimates of the total ionization cross section, limiting the ionization of a neutral beam to less than 5% while traversing a four -meter path would require a chamber pressure of no more than 5 x 10 -5 torr. Alternatively, even at chamber pressures that are too high to allow propagation of atomically neutral beams, the negative ion approach may still have appeal, since it precludes the possibly serious problem of electron contamination of a positive ion beam during acceleration, drift compression, and focusing

Ion beam assisted deposition of nano-structured C:Ni films

Energy Technology Data Exchange (ETDEWEB)

Abrasonis, G.; Muecklich, A.; Heller, R.; Heinig, K.H.; Gemming, S.; Moeller, W. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Krause, M. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Institute of Physics, TU Dresden (Germany)

2012-07-01

Nanostructures influence material properties dramatically due to size, shape and interface effects. Thus the control of the structure at the nanoscale is a key issue in nanomaterials science. The interaction of hyperthermal ions with solids is confined to the nanometer scale. Thus, it can be used to control the morphology evolution during multiphase film deposition. Ion-induced displacements occur in a thin surface layer of the growing film where they increase the atomic mobility for the phase separation. Here the growth-structure relationship of C:Ni (15 at.%) nanocomposite films grown by oblique incidence (45 ) ion beam assisted deposition is reported. The influences of the flux of an assisting Ar+ ion beam (0-140 eV) as well as of an elevated substrate temperature have been studied. The formation of elongated nickel nanoparticles is strongly promoted by the ion beam assistance. Moreover, the metal nanocolumns no longer align with the advancing surface, but with the incoming ions. A window of conditions is established within which the ion assistance leads to the formation of regular composition modulations with a well defined periodicity and tilt. As the dominating driving force for the pattern formation is of physical origin, this approach might be applicable to other immiscible systems.

Fabrication of monolithic microfluidic channels in diamond with ion beam lithography

Science.gov (United States)

Picollo, F.; Battiato, A.; Boarino, L.; Ditalia Tchernij, S.; Enrico, E.; Forneris, J.; Gilardino, A.; Jakšić, M.; Sardi, F.; Skukan, N.; Tengattini, A.; Olivero, P.; Re, A.; Vittone, E.

2017-08-01

In the present work, we report on the monolithic fabrication by means of ion beam lithography of hollow micro-channels within a diamond substrate, to be employed for microfluidic applications. The fabrication strategy takes advantage of ion beam induced damage to convert diamond into graphite, which is characterized by a higher reactivity to oxidative etching with respect to the chemically inert pristine structure. This phase transition occurs in sub-superficial layers thanks to the peculiar damage profile of MeV ions, which mostly damage the target material at their end of range. The structures were obtained by irradiating commercial CVD diamond samples with a micrometric collimated C+ ion beam at three different energies (4 MeV, 3.5 MeV and 3 MeV) at a total fluence of 2 × 1016 cm-2. The chosen multiple-energy implantation strategy allows to obtain a thick box-like highly damaged region ranging from 1.6 μm to 2.1 μm below the sample surface. High-temperature annealing was performed to both promote the graphitization of the ion-induced amorphous layer and to recover the pristine crystalline structure in the cap layer. Finally, the graphite was removed by ozone etching, obtaining monolithic microfluidic structures. These prototypal microfluidic devices were tested injecting aqueous solutions and the evidence of the passage of fluids through the channels was confirmed by confocal fluorescent microscopy.

Studies of the beam extraction system of the GTS-LHC electron cyclotron resonance ion source at CERN.

Science.gov (United States)

Toivanen, V; Küchler, D

2016-02-01

The 14.5 GHz GTS-LHC Electron Cyclotron Resonance Ion Source (ECRIS) provides multiply charged heavy ion beams for the CERN experimental program. The GTS-LHC beam formation has been studied extensively with lead, argon, and xenon beams with varied beam extraction conditions using the ion optical code IBSimu. The simulation model predicts self-consistently the formation of triangular and hollow beam structures which are often associated with ECRIS ion beams, as well as beam loss patterns which match the observed beam induced markings in the extraction region. These studies provide a better understanding of the properties of the extracted beams and a way to diagnose the extraction system performance and limitations, which is otherwise challenging due to the lack of direct diagnostics in this region and the limited availability of the ion source for development work.

Ion beam studies

International Nuclear Information System (INIS)

Freeman, J.H.; Chivers, D.J.; Gard, G.A.; Temple, W.

1977-04-01

A description of techniques for the production of intense beams of heavy ions is given. A table of recommended operational procedures for most elements is included. The ionisation of boron is considered in some detail because of its particular importance as a dopant for ion implantation. (author)

Ion beams provided by small accelerators for material synthesis and characterization

Science.gov (United States)

Mackova, Anna; Havranek, Vladimir

2017-06-01

The compact, multipurpose electrostatic tandem accelerators are extensively used for production of ion beams with energies in the range from 400 keV to 24 MeV of almost all elements of the periodic system for the trace element analysis by means of nuclear analytical methods. The ion beams produced by small accelerators have a broad application, mainly for material characterization (Rutherford Back-Scattering spectrometry, Particle Induced X ray Emission analysis, Nuclear Reaction Analysis and Ion-Microprobe with 1 μm lateral resolution among others) and for high-energy implantation. Material research belongs to traditionally progressive fields of technology. Due to the continuous miniaturization, the underlying structures are far beyond the analytical limits of the most conventional methods. Ion Beam Analysis (IBA) techniques provide this possibility as they use probes of similar or much smaller dimensions (particles, radiation). Ion beams can be used for the synthesis of new progressive functional nanomaterials for optics, electronics and other applications. Ion beams are extensively used in studies of the fundamental energetic ion interaction with matter as well as in the novel nanostructure synthesis using ion beam irradiation in various amorphous and crystalline materials in order to get structures with extraordinary functional properties. IBA methods serve for investigation of materials coming from material research, industry, micro- and nano-technology, electronics, optics and laser technology, chemical, biological and environmental investigation in general. Main research directions in laboratories employing small accelerators are also the preparation and characterization of micro- and nano-structured materials which are of interest for basic and oriented research in material science, and various studies of biological, geological, environmental and cultural heritage artefacts are provided too.

Ion beam texturing

Science.gov (United States)

Hudson, W. R.

1977-01-01

A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

Review of Heavy-ion Induced Desorption Studies for Particle Accelerators

CERN Document Server

Mahner, E

2008-01-01

During high-intensity heavy-ion operation of several particle accelerators worldwide, large dynamic pressure rises of orders of magnitude were caused by lost beam ions that impacted under grazing angle onto the vacuum chamber walls. This ion-induced desorption, observed, for example, at CERN, GSI, and BNL, can seriously limit the ion intensity, luminosity, and beam lifetime of the accelerator. For the heavyion program at CERN's Large Hadron Collider collisions between beams of fully stripped lead (208Pb82+) ions with a beam energy of 2.76 TeV/u and a nominal luminosity of 10**27 cm**-2 s**-1 are foreseen. The GSI future project FAIR (Facility for Antiproton and Ion Research) aims at a beam intensity of 10**12 uranium (238U28+) ions per second to be extracted from the synchrotron SIS18. Over the past years an experimental effort has been made to study the observed dynamic vacuum degradations, which are important to understand and overcome for present and future particle accelerators. The paper reviews the resu...

Ion beam techniques for analyzing polymers irradiated by ions

International Nuclear Information System (INIS)

Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

1992-01-01

In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

Molecular dynamics studies of the ion beam induced crystallization in silicon

International Nuclear Information System (INIS)

Marques, L.A.; Caturla, M.J.; Huang, H.

1995-01-01

We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecular dynamics techniques. The growth of small crystal seeds embedded in the amorphous phase has been monitored for several temperatures in order to get information on the effect of the thermal temperature increase introduced by the incoming ion. The role of ion-induced defects on the growth has been also studied

Radioactive ion beams produced by neutron-induced fission at ISOLDE

CERN Document Server

Catherall, R; Gilardoni, S S; Köster, U

2003-01-01

The production rates of neutron-rich fission products for the next-generation radioactive beam facility EURISOL are mainly limited by the maximum amount of power deposited by protons in the target. An alternative approach is to use neutron beams to induce fission in actinide targets. This has the advantage of reducing: the energy deposited by the proton beam in the target; contamination from neutron-deficient isobars that would be produced by spallation; and mechanical stress on the target. At ISOLDE CERN, tests have been made on standard ISOLDE actinide targets using fast neutron bunches produced by bombarding thick, high-Z metal converters with 1 and 1.4 GeV proton pulses. This paper reviews the first applications of converters used at ISOLDE. It highlights the different geometries and the techniques used to compare fission yields produced by the proton beam directly on the target with neutron-induced fission. Results from the six targets already tested, namely UC2/graphite and ThO2 targets with tungsten an...

Ion sources for initial use at the Holifield radioactive ion beam facility

International Nuclear Information System (INIS)

Alton, G.D.

1994-01-01

The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the HRIBF because of its low emittance, relatively high ionization efficiencies and species versatility, and because it has been engineered for remote installation, removal and servicing as required for safe handling in a high-radiation-level ISOL facility. Prototype plasma-sputter negative ion sources and negative surfaceionization sources are also under design consideration for generating negative radioactive ion beams from high electron-affinity elements. A brief review of the HRIBF will be presented, followed by a detailed description of the design features, operational characteristics, ionization efficiencies, and beam qualities (emittances) of these sources

The cooling of confined ions driven by laser beams

International Nuclear Information System (INIS)

Reyna, L.G.

1993-01-01

We finalize the dynamics of confined ions driven by a quantized radiation field. The ions can absorb photons from an incident laser beam and relax back to the ground state by either induced emissions or spontaneous emissions. Here we assume that the absorption of photons is immediately followed by spontaneous emissions, resulting in single-level ions perturbed by the exchange of momentum with the radiation field. The probability distribution of the ions is calculated using singular expansions in the low noise asymptotic limit. The present calculations reproduce the quantum results in the limit of heavy particles in static traps, and the classical results of ions in radio-frequency confining wells

Conical pinched electron beam diode for intense ion beam source

International Nuclear Information System (INIS)

Matsukawa, Yoshinobu; Nakagawa, Yoshiro

1982-01-01

For the purpose of improvement of the pinched electron beam diode, the production of an ion beam by a diode with electrodes in a conical shape was studied at low voltage operation (--200 kV). The ion beam is emitted from a small region of the diode apex. The mean ion beam current density near the axis at 12 cm from the diode apex is two or three times that from an usual flat parallel diode with the same dimension and impedance. The brightness and the power brightness at the otigin are 450 MA/cm 2 sr and 0.12 TW/cm 2 sr respectively. (author)

A quadrupole ion trap as low-energy cluster ion beam source

CERN Document Server

Uchida, N; Kanayama, T

2003-01-01

Kinetic energy distribution of ion beams was measured by a retarding field energy analyzer for a mass-selective cluster ion beam deposition system that uses a quadrupole ion trap as a cluster ion beam source. The results indicated that the system delivers a cluster-ion beam with energy distribution of approx 2 eV, which corresponded well to the calculation results of the trapping potentials in the ion trap. Using this deposition system, mass-selected hydrogenated Si cluster ions Si sub n H sub x sup + were actually deposited on Si(111)-(7x7) surfaces at impact kinetic energy E sub d of 3-30 eV. Observation by using a scanning tunneling microscope (STM) demonstrated that Si sub 6 H sub x sup + cluster ions landed on the surface without decomposition at E sub d =3 eV, while the deposition was destructive at E sub d>=18 eV. (author)

Modeling of intense pulsed ion beam heated masked targets for extreme materials characterization

Science.gov (United States)

Barnard, John J.; Schenkel, Thomas

2017-11-01

Intense, pulsed ion beams locally heat materials and deliver dense electronic excitations that can induce material modifications and phase transitions. Material properties can potentially be stabilized by rapid quenching. Pulsed ion beams with pulse lengths of order ns have recently become available for materials processing. Here, we optimize mask geometries for local modification of materials by intense ion pulses. The goal is to rapidly excite targets volumetrically to the point where a phase transition or local lattice reconstruction is induced followed by rapid cooling that stabilizes desired material's properties fast enough before the target is altered or damaged by, e.g., hydrodynamic expansion. By using a mask, the longitudinal dimension can be large compared to the transverse dimension, allowing the possibility of rapid transverse cooling. We performed HYDRA simulations that calculate peak temperatures for a series of excitation conditions and cooling rates of silicon targets with micro-structured masks and compare these to a simple analytical model. The model gives scaling laws that can guide the design of targets over a wide range of pulsed ion beam parameters.

Extraction of space-charge-dominated ion beams from an ECR ion source: Theory and simulation

Science.gov (United States)

Alton, G. D.; Bilheux, H.

2004-05-01

Extraction of high quality space-charge-dominated ion beams from plasma ion sources constitutes an optimization problem centered about finding an optimal concave plasma emission boundary that minimizes half-angular divergence for a given charge state, independent of the presence or lack thereof of a magnetic field in the extraction region. The curvature of the emission boundary acts to converge/diverge the low velocity beam during extraction. Beams of highest quality are extracted whenever the half-angular divergence, ω, is minimized. Under minimum half-angular divergence conditions, the plasma emission boundary has an optimum curvature and the perveance, P, current density, j+ext, and extraction gap, d, have optimum values for a given charge state, q. Optimum values for each of the independent variables (P, j+ext and d) are found to be in close agreement with those derived from elementary analytical theory for extraction with a simple two-electrode extraction system, independent of the presence of a magnetic field. The magnetic field only increases the emittances of beams through additional aberrational effects caused by increased angular divergences through coupling of the longitudinal to the transverse velocity components of particles as they pass though the mirror region of the electron cyclotron resonance (ECR) ion source. This article reviews the underlying theory of elementary extraction optics and presents results derived from simulation studies of extraction of space-charge dominated heavy-ion beams of varying mass, charge state, and intensity from an ECR ion source with emphasis on magnetic field induced effects.

Extraction of space-charge-dominated ion beams from an ECR ion source: Theory and simulation

International Nuclear Information System (INIS)

Alton, G.D.; Bilheux, H.

2004-01-01

Extraction of high quality space-charge-dominated ion beams from plasma ion sources constitutes an optimization problem centered about finding an optimal concave plasma emission boundary that minimizes half-angular divergence for a given charge state, independent of the presence or lack thereof of a magnetic field in the extraction region. The curvature of the emission boundary acts to converge/diverge the low velocity beam during extraction. Beams of highest quality are extracted whenever the half-angular divergence, ω, is minimized. Under minimum half-angular divergence conditions, the plasma emission boundary has an optimum curvature and the perveance, P, current density, j +ext , and extraction gap, d, have optimum values for a given charge state, q. Optimum values for each of the independent variables (P, j +ext and d) are found to be in close agreement with those derived from elementary analytical theory for extraction with a simple two-electrode extraction system, independent of the presence of a magnetic field. The magnetic field only increases the emittances of beams through additional aberrational effects caused by increased angular divergences through coupling of the longitudinal to the transverse velocity components of particles as they pass though the mirror region of the electron cyclotron resonance (ECR) ion source. This article reviews the underlying theory of elementary extraction optics and presents results derived from simulation studies of extraction of space-charge dominated heavy-ion beams of varying mass, charge state, and intensity from an ECR ion source with emphasis on magnetic field induced effects

The study of the ion beam induced swelling in crystalline germanium irradiated by a 30 keV Ga+ focused ion beam

International Nuclear Information System (INIS)

Rubanov, S.; Munroe, P.R.; Stevens-Kalceff, M.

2005-01-01

The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga + focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of ∼10 17 ions/cm 2 . Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs

Ion beam inertial fusion

International Nuclear Information System (INIS)

Bangerter, R.O.

1995-01-01

About twenty years ago, A. W. Maschke of Brookhaven National Laboratory and R. L. Martin of Argonne National Laboratory recognized that the accelerators that have been developed for high energy and nuclear physics are, in many ways, ideally suited to the requirements of inertial fusion power production. These accelerators are reliable, they have a long operating life, and they can be efficient. Maschke and Martin noted that they can focus ion beams to small focal spots over distances of many meters and that they can readily operate at the high pulse repetition rates needed for commercial power production. Fusion, however, does impose some important new constraints that are not important for high energy or nuclear physics applications. The most challenging new constraint from a scientific standpoint is the requirement that the accelerator deliver more than 10 14 W of beam power to a small quantity (less than 100 mg) of matter. The most challenging constraint from an engineering standpoint is accelerator cost. Maschke showed theoretically that accelerators could produce adequate work. Heavy-ion fusion is widely recognized to be a promising approach to inertial fusion power production. It provides an excellent opportunity to apply methods and technology developed for basic science to an important societal need. The pulsed-power community has developed a complementary, parallel approach to ion beam fusion known as light-ion fusion. The talk will discuss both heavy-ion and light-ion fusion. It will explain target physics requirements and show how they lead to constraints on the usual accelerator parameters such as kinetic energy, current, and emittance. The talk will discuss experiments that are presently underway, specifically experiments on high-current ion sources and injectors, pulsed-power machines recirculating induction accelerators, and transverse beam combining. The talk will give a brief description of a proposed new accelerator called Elise

Modification of PMMA/graphite nanocomposites through ion beam technique

Science.gov (United States)

Singhal, Prachi; Rattan, Sunita; Avasthi, Devesh Kumar; Tripathi, Ambuj

2013-08-01

Swift heavy ion (SHI) irradiation is a special technique for inducing physical and chemical modifications in bulk materials. In the present work, the SHI hs been used to prepare nanocomposites with homogeneously dispersed nanoparticles. The nanographite was synthesized from graphite using the intercalation-exfoliation method. PMMA Poly(methyl methacrylate)/graphite nanocomposites have been synthesized by in situ polymerization. The prepared PMMA/graphite nanocomposite films were irradiated with SHI irradiation (Ni ion beam, 80 MeV and C ion beam, 50 MeV) at a fluence of 1×1010 to 3×1012 ions/cm2. The nanocomposite films were characterized by scanning electron microscope (SEM) and were evaluated for their electrical and sensor properties. After irradiation, significant changes in surface morphology of nanocomposites were observed as evident from the SEM images, which show the presence of well-distributed nanographite platelets. The irradiated nanocomposites exhibit better electrical and sensor properties for the detection of nitroaromatics with marked improvement in sensitivity as compared with unirradiated nanocomposites.

Preliminary research results for the generation and diagnostics of high power ion beams on FLASH II accelerator

International Nuclear Information System (INIS)

Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Li Jingya; Ren Shuqing; Ouyang Xiaoping; Zhang Guoguang; Li Hongyu

2004-01-01

The preliminary experimental results of the generation and diagnostics of high-power ion beams on FLASH II accelerator are reported. The high-power ion beams presently are being produced in a pinched diode. The method for enhancing the ratio of ion to electron current is to increase the electron residing time by pinching the electron flow. Furthermore, electron beam pinching can be combined with electron reflexing to achieve ion beams with even higher efficiency and intensity. The anode plasma is generated by anode foil bombarded with electron and anode foil surface flashover. In recent experiments on FLASH II accelerator, ion beams have been produced with a current of 160 kA and an energy of 500 keV corresponding to an ion beam peak power of about 80 GW. The ion number and current of high power ion beams were determined by monitoring delayed radioactivity from nuclear reactions induced in a 12 C target by the proton beams. The prompt γ-rays and diode Bremsstrahlung X-rays were measured with a PIN semi-conductor detector and a plastic scintillator detector. The current density distribution of ion beam was measured with a biased ion collector array. The ion beams were also recorded with a CR-39 detector. (authors)

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Energy Technology Data Exchange (ETDEWEB)

Semsang, Nuananong, E-mail: nsemsang@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, LiangDeng [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Ion beam bombarded rice seeds in vacuum. ► Studied seed survival from the ion bombardment. ► Determined various antioxidant enzyme activities and lipid peroxidation level. ► Discussed vacuum, ion species and ion energy effects. ► Attributed the changes to free radical formation due to ion bombardment. -- Abstract: Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29–60 keV and ion fluences of 1 × 10{sup 16} ions cm{sup −2}. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Beam-front dynamics and ion acceleration in drifting intense relativistic electron beams

International Nuclear Information System (INIS)

Alexander, K.F.; Hintze, W.

1976-01-01

Collective ion acceleration at the injection of a relativistic electron beam into a low-pressure gas or a plasma is discussed and its strong dependence on the beam-front dynamics is shown. A simple one-dimensional model taking explicitly into account the motion and ionizing action of the ions in the beam-front region is developed for the calculation of the beam drift velocity. The obtained pressure dependence is in good agreement with experimental data. The energy distribution is shown of the ions accelerated in the moving potential well of the space charge region. Scaling laws for the beam-front dynamics and ion acceleration are derived. (J.U.)

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K., E-mail: k.prakrajang@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2012-09-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10{sup 15} to 10{sup 16} ions/cm{sup 2}. The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

Scintillating screens study for LEIR/LHC heavy ion beams

CERN Document Server

Bal, C; Lefèvre, T; Scrivens, R; Taborelli, M

2005-01-01

It has been observed on different machines that scintillating ceramic screens (like chromium doped alumina) are quickly damaged by low energy ion beams. These particles are completely stopped on the surface of the screens, inducing both a high local temperature increase and the electrical charging of the material. A study has been initiated to understand the limiting factors and the damage mechanisms. Several materials, ZrO2, BN and Al2O3, have been tested at CERN on LINAC3 with 4.2MeV/u lead ions. Alumina (Al2O3) is used as the reference material as it is extensively used in beam imaging systems. Boron nitride (BN) has better thermal properties than Alumina and Zirconium oxide (ZrO2). BN has in fact the advantage of increasing its electrical conductivity when heated. This contribution presents the results of the beam tests, including the post-mortem analysis of the screens and the outlook for further measurements. The strategy for the choice of the screens for the Low Energy Ion Ring (LEIR), currently under ...

Topography of InP surface bombarded by O2+ ion beam

International Nuclear Information System (INIS)

Sun Zhaoqi

1997-01-01

The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

Multicharged and intense heavy ion beam sources

International Nuclear Information System (INIS)

Kutner, V.B.

1981-01-01

The cyclotron plasma-are source (PIG), duoplasmatron (DP), laser source (LS), electron beam ion source (EBIS) and electron cyclotron resonance source (ECRS) from the viewpoint of generating intense and high charge state beams are considered. It is pointed out that for the last years three types of multicharged ion sources-EBIS, ECR and LS have been essentially developed. In the EBIS source the Xe 48+ ions are produced. The present day level of the development of the electron-beam ionization technique shows that by means of this technique intensive uranium nuclei beams production becomes a reality. On the ECR source Xe 26+ approximately 4x10 10 h/s, Asub(r)sup(12+) approximately 10 12 h/s intensive ion beams are produced. In the laser source a full number of C 6+ ions during one laser pulse constitutes not less than 10 10 from the 5x10mm 2 emission slit. At the present time important results are obtained pointing to the possibility to separate the ion component of laser plasma in the cyclotron central region. On the PIG source the Xe 15+ ion current up to 10μA per pulse is produced. In the duoplasmatron the 11-charge state of xenon ion beams is reached [ru

The influence of projectile ion induced chemistry on surface pattern formation

Energy Technology Data Exchange (ETDEWEB)

Karmakar, Prasanta, E-mail: prasantak@vecc.gov.in [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India); Satpati, Biswarup [Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064 (India)

2016-07-14

We report the critical role of projectile induced chemical inhomogeneity on surface nanostructure formation. Experimental inconsistency is common for low energy ion beam induced nanostructure formation in the presence of uncontrolled and complex contamination. To explore the precise role of contamination on such structure formation during low energy ion bombardment, a simple and clean experimental study is performed by selecting mono-element semiconductors as the target and chemically inert or reactive ion beams as the projectile as well as the source of controlled contamination. It is shown by Atomic Force Microscopy, Cross-sectional Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy measurements that bombardment of nitrogen-like reactive ions on Silicon and Germanium surfaces forms a chemical compound at impact zones. Continuous bombardment of the same ions generates surface instability due to unequal sputtering and non-uniform re-arrangement of the elemental atom and compound. This instability leads to ripple formation during ion bombardment. For Argon-like chemically inert ion bombardment, the chemical inhomogeneity induced boost is absent; as a result, no ripples are observed in the same ion energy and fluence.

Auroral ion beams and ion acoustic wave generation by fan instability

Energy Technology Data Exchange (ETDEWEB)

Vaivads, A

1996-04-01

Satellite observations indicate that efficient energy transport among various plasma particles and between plasma waves and plasma particles is taking place in auroral ion beam regions. These observations show that two characteristic wave types are associated with the auroral ion beam regions: electrostatic hydrogen cyclotron waves with frequencies above hydrogen gyrofrequency, and low frequency waves with frequencies below hydrogen gyrofrequency. We speculate that the low frequency waves can be ion acoustic waves generated through the fan instability. The presence of a cold background ion component is necessary for the onset of this instability. A cold ion component has been directly observed and has been indirectly suggested from observations of solitary wave structures. The wave-particle interaction during the development of the fan instability results in an efficient ion beam heating in the direction perpendicular to the ambient magnetic field. The fan instability development and the ion beam heating is demonstrated in a numerical particle simulation. 23 refs, 16 figs.

Intense ion beam research at Los Alamos

International Nuclear Information System (INIS)

Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

1992-01-01

Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long-pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle energy distributions in large, dense, ignited tokamaks such as ITER

Intense ion beam research at Los Alamos

International Nuclear Information System (INIS)

Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

1993-01-01

Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle distributions in large, dense, ignited tokamaks such as ITER

Development of ion/proton beam equipment for industrial uses

Energy Technology Data Exchange (ETDEWEB)

Choi, Byung Ho; Lee, J. H.; Cho, Y. S.; Joo, P. K.; Kang, S. S.; Song, W. S.; Kim, H. J.; Chang, G. H.; Bang, S. W

1999-12-01

KAERI has possessed design and fabrication technologies of various ion sources including Duoplasmatron and DuoPiGatron developed by R and D projects of the long-term nuclear technology development program. In order to industrialize ion beam equipments utilizing these ion sources, a technology transfer project for a technology transfer project for a domestic firm has been performed. Under this project, engineers of the firm have been trained through classroom lectures of ion beam principles and OJT, an ion/proton beam equipment (DEMO equipment) has been designed, assembled and commissioned jointly with the engineers. Quality of the ion sources has been quantified, and technologies for ion beam equipment construction, functional test and application research have been developed. The DEMO equipment, which consists of an ion source, power supplies, vacuum, cooling and target systems, has been fabricated and tested to secure stability and reliability for industrial uses. Various characteristic tests including high voltage insulation, beam extraction, beam current measuring, etc. have been performed. This DEMO can be utilized for ion sources development as well as ion beam process development for various industrial products. Engineers of the firm have been trained for the industrialization of ion beam equipment and joined in beam application technology development to create industrial needs of beam equipment. (author)

Cobalt alloy ion sources for focused ion beam implantation

Energy Technology Data Exchange (ETDEWEB)

Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

Ion sources development at GANIL for radioactive beams and high charge state ions

International Nuclear Information System (INIS)

Leroy, R.; Barue, C.; Canet, C.; Dupuis, M.; Flambard, J.L.; Gaubert, G.; Gibouin, S.; Huguet, Y.; Jardin, P.; Lecesne, N.; Leherissier, P.; Lemagnen, F.; Pacquet, J.Y.; Pellemoine-Landre, F.; Rataud, J.P.; Saint-Laurent, M.G.; Villari, A.C.C.; Maunoury, L.

2001-01-01

The GANIL laboratory has in charge the production of ion beams for nuclear and non nuclear physics. This article reviews the last developments that are underway in the fields of radioactive ion beam production, increase of the metallic ion intensities and production of highly charges ion beams. (authors)

Beam emittance measurements on multicusp ion sources

Energy Technology Data Exchange (ETDEWEB)

Sarstedt, M.; Lee, Y.; Leung, K.N. [and others

1995-08-01

Multicusp ion sources are used for various applications. Presently, the implementation of this type of ion source planned for the development of an ion beam lithography machine, which will be used for the projection of sub-0.2 {mu}m patterns onto a wafer substrate. Since, for this application, a very good beam quality and a small ion energy spread are required, emittance measurements have been performed on a multicusp ion source for various source conditions. It is shown that the installation of proper capacitors between the extraction electrodes is necessary to avoid rf-pickup, which otherwise leads to a distortion of the beam emittance. The influence of the magnetic filter field on the beam emittance has been investigated, and the beam emittance of a dc filament-discharge plasma has also been compared to that of an rf-generated plasma.

Beam emittance measurements on multicusp ion sources

International Nuclear Information System (INIS)

Sarstedt, M.; Lee, Y.; Leung, K.N.

1995-08-01

Multicusp ion sources are used for various applications. Presently, the implementation of this type of ion source planned for the development of an ion beam lithography machine, which will be used for the projection of sub-0.2 μm patterns onto a wafer substrate. Since, for this application, a very good beam quality and a small ion energy spread are required, emittance measurements have been performed on a multicusp ion source for various source conditions. It is shown that the installation of proper capacitors between the extraction electrodes is necessary to avoid rf-pickup, which otherwise leads to a distortion of the beam emittance. The influence of the magnetic filter field on the beam emittance has been investigated, and the beam emittance of a dc filament-discharge plasma has also been compared to that of an rf-generated plasma

Beam Dynamics Design Studies of a Superconducting Radioactive Ion Beam Post-accelerator

CERN Document Server

Fraser, MA; Pasini, M

2011-01-01

The HIE-ISOLDE project at CERN proposes a superconducting upgrade to increase the energy range and quality of the radioactive ion beams produced at ISOLDE, which are currently post- accelerated by the normal conducting REX linac. The specification and design choices for the HIE-ISOLDE linac are outlined along with a comprehensive beam dynamics study undertaken to understand and mitigate the sources of beam emittance dilution. The dominant cause of transverse emittance growth was attributed to the coupling between the transverse and longitudinal motions through the phase dependence of the rf defocusing force in the accelerating cavities. A parametric resonance induced by the coupling was observed and its excitation surveyed as a function of trans- verse phase advance using numerical simulations and analytic models to understand and avoid the regions of transverse beam instability. Other sources of emittance growth were studied and where necessary ameliorated, including the beam steering force in the quarter-wa...

Colliding-beams polarized ion source

International Nuclear Information System (INIS)

Trainor, T.A.; Douglas, J.G.; Badt, D.; Christiensen, C.; Herron, A.; Leach, D.; Olsen, J.; Osborne, J.L.; Zeps, V.

1985-01-01

This ion source was to be purchased from ANAC, Inc., a New Zealand-based supplier of beam optics hardware and atomic beam polarized ion sources in December 1982. Shortly before scheduled delivery ANAC went into receivership. During 1983 little work was done on the project as various steps were taken by us, first to get the ion source completed at ANAC, and then, failing that, to obtain the existing parts. In early 1984 we began work to finish the ion source in Seattle. The project is nearly complete, and this article presents progress to date. 2 refs

Modeling of ion beam surface treatment

Energy Technology Data Exchange (ETDEWEB)

Stinnett, R W [Quantum Manufacturing Technologies, Inc., Albuquerque, NM (United States); Maenchen, J E; Renk, T J [Sandia National Laboratories, Albuquerque, NM (United States); Struve, K W [Mission Research Corporation, Albuquerque, NM (United States); Campbell, M M [PASTDCO, Albuquerque, NM (United States)

1997-12-31

The use of intense pulsed ion beams is providing a new capability for surface engineering based on rapid thermal processing of the top few microns of metal, ceramic, and glass surfaces. The Ion Beam Surface Treatment (IBEST) process has been shown to produce enhancements in the hardness, corrosion, wear, and fatigue properties of surfaces by rapid melt and re-solidification. A new code called IBMOD was created, enabling the modeling of intense ion beam deposition and the resulting rapid thermal cycling of surfaces. This code was used to model the effect of treatment of aluminum, iron, and titanium using different ion species and pulse durations. (author). 3 figs., 4 refs.

Beam position and total current monitor for heavy ion fusion beams

International Nuclear Information System (INIS)

Berners, D.; Reginato, L.L.

1992-10-01

Heavy Ion Fusion requires moderate currents, 1-10A, for a duration of about 1 μs. For accurate beam transport, the center of charge must be located to within ± 100 μm. Beam position and intensity may be excited at frequencies approaching 10 MHz, and the monitoring system must have adequate bandwidth to respond at these frequencies. We have modified the Rogowski technique by using distributed reactance multiturn magnetic loops so that it is suitable for measuring current position as well as amplitude. Four identical stripline coils are wound one per quadrant around a non magnetic core. The sensitivity is similar to that of a lumped coil system, with the added advantage of increased bandwidth. The voltages induced on the four separate coils are compared and suitable signal conditioning is performed to recover beam position and intensity information

Ion beam source construction and applications

International Nuclear Information System (INIS)

Torab, S.I.R.

2011-01-01

The aim of this thesis is to improve the performance of a new shape cold cathode Penning ion source to be suitable for some applications. In this work, many trials have been made to reach the optimum dimensions of the new shape of cold Molybdenum cathode Penning ion source with radial extraction. The high output ion beam can be extracted in a direction transverse to the discharge region. The new shape cold cathode Penning ion source consists of Copper cylindrical hollow anode of 40 mm length, 12 mm diameter and has two similar cone ends of 15 mm length, 22 mm upper cone diameter and 12 mm bottom cone diameter. The two movable Molybdenum cathodes are fixed in Perspex insulator and placed symmetrically at two ends of the anode. The Copper emission disc of 2 mm thickness and has central aperture of different diameters is placed at the middle of the anode for ion beam exit. The inner surface of the emission disc is isolated from the anode by Perspex insulator except an area of diameter 5 mm to confine the electrical discharge in this area. A movable Faraday cup is placed at different distances from the emission electrode aperture and used to collect the output ion beam from the ion source. The working gases are admitted to the ion source through a hole in the anode via a needle valve which placed between the gas cylinder and the ion source. The optimum anode- cathode distance, the uncovered area diameter of the emission disc, the central aperture diameter of the emission electrode, the distance between emission electrode and Faraday cup have been determined using Argon gas. The optimum distances of the ion source were found to be equal to 6 mm, 5 mm, 2.5 mm, and 3 cm respectively where stable discharge current and maximum output ion beam current at low discharge current can be obtained. The discharge characteristics, ion beam characteristics, and the efficiency of the ion source have been measured at different operating conditions and different gas pressures using

Electrohydrodynamic emitters of ion beams

International Nuclear Information System (INIS)

Dudnikov, V.G.; Shabalin, A.L.

1990-01-01

Physical processes determining generation of ion beams with high emission current density in electrohydrodynamic emitters are considered. Electrohydrodynamic effects developing in ion emission features and kinetics of ion interaction in beams with high density are discussed. Factors determining the size of the emission zone, emission stability at high and low currents, cluster generation, increase of energy spread and decrease of brightness are analyzed. Problems on practical provision of stable EHD emitter functioning are considered. 94 refs.; 8 figs.; 1 tab

ORNL positive ion neutral beam program

International Nuclear Information System (INIS)

Whealton, J.H.; Haselton, H.H.; Barber, G.C.

1978-01-01

The neutral beam group at Oak Ridge National Laboratory has constructed neutral beam generators for the ORMAK and PLT devices, is presently constructing neutral beam devices for the ISX and PDX devices, and is contemplating the construction of neutral beam systems for the advanced TNS device. These neutral beam devices stem from the pioneering work on ion sources of G. G. Kelley and O. B. Morgan. We describe the ion sources under development at this Laboratory, the beam optics exhibited by these sources, as well as some theoretical considerations, and finally the remainder of the beamline design

Measurement of secondary particle production induced by particle therapy ion beams impinging on a PMMA target

Directory of Open Access Journals (Sweden)

Toppi M.

2016-01-01

Full Text Available Particle therapy is a technique that uses accelerated charged ions for cancer treatment and combines a high irradiation precision with a high biological effectiveness in killing tumor cells [1]. Informations about the secondary particles emitted in the interaction of an ion beam with the patient during a treatment can be of great interest in order to monitor the dose deposition. For this purpose an experiment at the HIT (Heidelberg Ion-Beam Therapy Center beam facility has been performed in order to measure fluxes and emission profiles of secondary particles produced in the interaction of therapeutic beams with a PMMA target. In this contribution some preliminary results about the emission profiles and the energy spectra of the detected secondaries will be presented.

Performance predictions of a focused ion beam from a laser cooled and compressed atomic beam

Energy Technology Data Exchange (ETDEWEB)

Haaf, G. ten; Wouters, S. H. W.; Vredenbregt, E. J. D.; Mutsaers, P. H. A. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Geer, S. B. van der [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Pulsar Physics, Burghstraat 47, 5614 BC Eindhoven (Netherlands)

2014-12-28

Focused ion beams are indispensable tools in the semiconductor industry because of their ability to image and modify structures at the nanometer length scale. Here, we report on performance predictions of a new type of focused ion beam based on photo-ionization of a laser cooled and compressed atomic beam. Particle tracing simulations are performed to investigate the effects of disorder-induced heating after ionization in a large electric field. They lead to a constraint on this electric field strength which is used as input for an analytical model which predicts the minimum attainable spot size as a function of, amongst others, the flux density of the atomic beam, the temperature of this beam, and the total current. At low currents (I < 10 pA), the spot size will be limited by a combination of spherical aberration and brightness, while at higher currents, this is a combination of chromatic aberration and brightness. It is expected that a nanometer size spot is possible at a current of 1 pA. The analytical model was verified with particle tracing simulations of a complete focused ion beam setup. A genetic algorithm was used to find the optimum acceleration electric field as a function of the current. At low currents, the result agrees well with the analytical model, while at higher currents, the spot sizes found are even lower due to effects that are not taken into account in the analytical model.

Ion beam irradiation effects on aromatic polymers

International Nuclear Information System (INIS)

Shukushima, Satoshi; Ueno, Keiji

1995-01-01

We studied the optical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H + , H 2 + and He + ions. The examined aromatic polymers were polyetherether ketone(PEEK), polyetherimide(PEI), polyether sulfon(PES), polysulfon(PSF), and polyphenylene sulfide(PPS). The optical densities at 300nm of PES and PSF greatly increased after the irradiation. The optical densities at 400nm of all the examined polymer lineally increased with the irradiation dose. The PEEK film which had been irradiated with 1 MeV H + was not deformed above melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the aromatic polymers for the same absorption energy. (author)

Nanofabrication by ion-beam sputtering fundamentals and applications

CERN Document Server

Som, Tapobrata

2012-01-01

Considerable attention has been paid to ion beam sputtering as an effective way to fabricate self-organized nano-patterns on various substrates. The significance of this method for patterning surfaces is that the technique is fast, simple, and less expensive. The possibility to create patterns on very large areas at once makes it even more attractive. This book reviews various fascinating results, understand the underlying physics of ion induced pattern formation, to highlight the potential applications of the patterned surfaces, and to explore the patterning behavior by different irradiation

Ion-beam technologies

Energy Technology Data Exchange (ETDEWEB)

Fenske, G.R. [Argonne National Lab., IL (United States)

1993-01-01

This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

Long-term degradation of chemical structures and mechanical properties in polyethylene induced by ion-beam irradiation

International Nuclear Information System (INIS)

Oka, T.; Hama, Y.

2004-01-01

The long-term degradation in polyethylene irradiated with ion beams was studied. We found the changes of the chemical structures and the mechanical properties with time storage. S-PE has a good resistance to ion-beam irradiation because the crystallinity and density were very low. (author)

MEV Energy Electrostatic Accelerator Ion Beam Emittance Measurement

OpenAIRE

I.G. Ignat’ev; M.I. Zakharets; S.V. Kolinko; D.P. Shulha

2014-01-01

The testing equipment was designed, manufactured and tried out permitting measurements of total current, current profile and emittance of an ion beam extracted from the ion beam. MeV energy electrostatic accelerator ion H + beam emittance measurement results are presented.

Heavy ion beam micromachining on LiNbO3

International Nuclear Information System (INIS)

Nesprias, F.; Venturino, M.; Debray, M.E.; Davidson, J.; Davidson, M.; Kreiner, A.J.; Minsky, D.; Fischer, M.; Lamagna, A.

2009-01-01

In this work 3D micromachining of x-cut lithium niobate crystals was performed using the high energy heavy ion microbeam (HIM) at the Tandar Laboratory, Buenos Aires. The samples were machined using 35 Cl beams at 70 MeV bombarding energy combined with wet etching with hydrofluoric acid solutions at room temperature. As the ion beam penetrates the sample, it induces lattice damage increasing dramatically the local etching rate of the material. This technique was applied to the fabrication of 3D waveguides with long control electrodes. The resulting structures indicate that well defined contours with nearly vertical sidewalls can be made. The results also show that with fluences of only 5 x 10 12 ions/cm 2 , this technique is suitable for the fabrication of different shapes of LiNbO 3 control-waveguides that can be used in different optical devices and matched with the existing optical fibers.

Nuclear fission induced by heavy ions

International Nuclear Information System (INIS)

Newton, J.O.

1988-09-01

Because the accelerators of the 50's and 60's mostly provided beams of light ions, well suited for studying individual quantum states of low angular momentum or reactions involving the transfer of one or two nucleons, the study of fission, being an example of large-scale collective motion, has until recently been outside of the mainstream of nuclear research. This situation has changed in recent years, due to the new generation of accelerators capable of producing beams of heavy ions with energies high enough to overcome the Coulomb barriers of all stable nuclei. These have made possible the study of new examples of large-scale collective motions, involving major rearrangements of nuclear matter, such as deep-inelastic collisions and heavy-ion fusion. Perhaps the most exciting development in the past few years is the discovery that dissipative effects (nuclear viscosity) play an important role in fission induced by heavy ions, contrary to earlier assumptions that the viscosity involved in fission was very weak and played only a minor role. This review will be mainly concerned with developments in heavy-ion induced fission during the last few years and have an emphasis on the very recent results on dissipative effects. Since heavy-ion bombardment usually results in compound systems with high excitation energies and angular momenta, shell effects might be expected to be small, and the subject of low energy fission, where they are important, will not be addressed. 285 refs., 58 figs

In-Situ atomic force microscopic observation of ion beam bombarded plant cell envelopes

International Nuclear Information System (INIS)

Sangyuenyongpipat, S.; Yu, L.D.; Brown, I.G.; Seprom, C.; Vilaithong, T.

2007-01-01

A program in ion beam bioengineering has been established at Chiang Mai University (CMU), Thailand, and ion beam induced transfer of plasmid DNA molecules into bacterial cells (Escherichia coli) has been demonstrated. However, a good understanding of the fundamental physical processes involved is lacking. In parallel work, onion skin cells have been bombarded with Ar + ions at energy 25 keV and fluence1-2 x 10 15 ions/cm 2 , revealing the formation of microcrater-like structures on the cell wall that could serve as channels for the transfer of large macromolecules into the cell interior. An in-situ atomic force microscope (AFM) system has been designed and installed in the CMU bio-implantation facility as a tool for the observation of these microcraters during ion beam bombardment. Here we describe some of the features of the in-situ AFM and outline some of the related work

Fabrication of platinum nanopillars on peptide-based soft structures using a focused ion beam

International Nuclear Information System (INIS)

Joshi, K B; Singh, Prabhpreet; Verma, Sandeep

2009-01-01

An expedient entry into the construction of bionanocomposites by merging peptide self-assembly, focused ion beam milling, and electron beam-induced deposition is described. Hexapeptides 1 and 2 revealed spherical self-assembled structures which are confirmed by a scanning electron microscope (SEM), atomic force microscope (AFM), focused ion beam/high-resolution scanning electron microscope (FIB-HRSEM), and high-resolution transmission electron microscopy (HRTEM). The microspheres from 1 and 2 are milled with the help of an ion beam to create different shapes. Soft spherical peptide-based structures were also subjected to fabrication under a gallium ion beam, followed by deposition of platinum pillars through a direct write process. It is envisaged that such hybrid bionanocomposites could have applications ranging from Pt-based hydrogenation catalysts to bioelectronics. In addition, such a fabrication process might also be useful to electrically connect two biological systems in order to study an electrical signal or electron transport phenomenon and structural transformations

Materials processing with intense pulsed ion beams

International Nuclear Information System (INIS)

Rej, D.J.; Davis, H.A.; Olson, J.C.

1996-01-01

We review research investigating the application of intense pulsed ion beams (IPIBs) for the surface treatment and coating of materials. The short range (0.1-10 μm) and high-energy density (1-50 J/cm 2 ) of these short-pulsed (≤ 1 μs) beams (with ion currents I = 5 - 50 kA, and energies E = 100 - 1000 keV) make them ideal to flash-heat a target surface, similar to the more familiar pulsed laser processes. IPIB surface treatment induces rapid melt and solidification at up to 10 10 K/s to cause amorphous layer formation and the production of non-equilibrium microstructures. At higher energy density the target surface is vaporized, and the ablated vapor is condensed as coatings onto adjacent substrates or as nanophase powders. Progress towards the development of robust, high-repetition rate IPIB accelerators is presented along with economic estimates for the cost of ownership of this technology

Development of target ion source systems for radioactive beams at GANIL

Energy Technology Data Exchange (ETDEWEB)

Bajeat, O., E-mail: bajeat@ganil.fr [GANIL, BP 55027, 14076 CAEN Cedex 05 (France); Delahaye, P. [GANIL, BP 55027, 14076 CAEN Cedex 05 (France); Couratin, C. [GANIL, BP 55027, 14076 CAEN Cedex 05 (France); LPC Caen, 6 bd Maréchal Juin, 14050 CAEN Cedex (France); Dubois, M.; Franberg-Delahaye, H.; Henares, J.L.; Huguet, Y.; Jardin, P.; Lecesne, N.; Lecomte, P.; Leroy, R.; Maunoury, L.; Osmond, B.; Sjodin, M. [GANIL, BP 55027, 14076 CAEN Cedex 05 (France)

2013-12-15

Highlights: • For Spiral 1, a febiad ion source has been connected to a graphite target. • For Spiral 2, an oven made with a carbon resistor is under development. • We made some measurement of effusion in the Spiral 2 target. • A laser ion source is under construction. -- Abstract: The GANIL facility (Caen, France) is dedicated to the acceleration of heavy ion beams including radioactive beams produced by the Isotope Separation On-Line (ISOL) method at the SPIRAL1 facility. To extend the range of radioactive ion beams available at GANIL, using the ISOL method two projects are underway: SPIRAL1 upgrade and the construction of SPIRAL2. For SPIRAL1, a new target ion source system (TISS) using the VADIS FEBIAD ion source coupled to the SPIRAL1 carbon target will be tested on-line by the end of 2013 and installed in the cave of SPIRAL1 for operation in 2015. The SPIRAL2 project is under construction and is being design for using different production methods as fission, fusion or spallation reactions to cover a large area of the chart of nuclei. It will produce among others neutron rich beams obtained by the fission of uranium induced by fast neutrons. The production target made from uranium carbide and heated at 2000 °C will be associated with several types of ion sources. Developments currently in progress at GANIL for each of these projects are presented.

Production of microbunched beams of very highly charged ions with an electron beam ion source

International Nuclear Information System (INIS)

Stoeckli, M.P.

1998-01-01

Electron beam ion sources produce very highly charged ions most efficiently in a batch mode as the confinement time can be directly optimized for the production of the desired charge state. If, after confinement, the voltage of the ion-confining downstream dam is lowered rapidly, all ions escape and form an ion beam pulse with a length of a few tens of μs. Raising the main trap voltage while maintaining a constant dam voltage in a open-quotes spill-over expulsionclose quotes reduces the energy spread of the expelled ions. The longer time periods of open-quotes slow-,close quotes open-quotes leaky batch mode-,close quotes and open-quotes direct current (dc) batch mode-close quotes expulsions allow for increasing the ion beam duty cycle. Combining the rapid expulsion with one of the latter methods allows for the expulsion of the ions of a single batch in many small microbunches with variable intervals, maintaining the low energy spread and the increased duty cycle of slow expulsions. Combining the open-quotes microbunchingclose quotes with open-quotes dc batch mode productionclose quotes and a multitrap operation will eventually allow for the production of equally intense ion bunches over a wide range of frequencies without any deadtime, and with minimal compromise on the most efficient production parameters. copyright 1998 American Institute of Physics

Simulation of electron cloud effects to heavy ion beams

Energy Technology Data Exchange (ETDEWEB)

Yaman, Fatih; Gjonaj, Erion; Weiland, Thomas [Technische Universitaet Darmstadt (Germany). Institut fuer Theorie Elektromagnetischer Felder

2011-07-01

Electron cloud (EC) driven instability can cause beam loss, emittance growth, trajectory change and wake fields. Mentioned crucial effects of EC motivated researchers to understand the EC build up mechanism and the effects of EC to the beam. This motivation also induced the progress of developing new simulation codes. EC simulations can roughly be divided into two classes such as, softwares whose goals are to simulate the build up of the EC during the passage of a bunch train and the codes which model the interaction of a bunch with an EC. The aim of this study is to simulate the effects of electron cloud (EC) on the dynamics of heavy ion beams which are used in heavy ion synchrotron (SIS-18) at GSI. To do this, a 3-D and self-consistent simulation program based on particle in cell (PIC) method is used. In the PIC cycle, accurate solution of the Maxwell equations is obtained by employing discontinuous Galerkin finite element method. As a model, we assumed a perfectly conducting beam pipe which was uniformly (or randomly) loaded with the electrons. Then as parallel with the realistic cases in SIS-18, a single bunch consisting of U{sup +73} ions was extracted which could propagate in this pipe. Due to EC-ion bunch interaction, electrons gained energy and their displacements were observed. Electric and magnetic field components and EC charge density were calculated, numerically.

Effects of focused ion beam induced damage on the plasticity of micropillars

International Nuclear Information System (INIS)

El-Awady, Jaafar A.; Woodward, Christopher; Dimiduk, Dennis M.; Ghoniem, Nasr M.

2009-01-01

The hardening effects of focused ion beam (FIB) induced damage produced during the fabrication of micropillars are examined by introducing a surface layer of nanosized obstacles into a dislocation dynamics simulation. The influence of the depth and strength of the obstacles as a function of pillar diameter is assessed parametrically. We show that for a selected set of sample sizes between 0.5 and 1.0 μm, the flow strength can increase by 10-20 %, for an obstacle strength of 750 MPa, and damage depth of 100 nm. On the other hand, for sizes larger and smaller than this range, the effect of damage is negligible. Results show that the obstacles formed during the FIB milling may be expected to alter the microstructure of micropillars, however, they have a negligible effect on the observed size-strength scaling laws.

Influence of ion beam and geometrical parameters on properties of Si thin films grown by Ar ion beam sputtering

Energy Technology Data Exchange (ETDEWEB)

Bundesmann, Carsten; Feder, Rene; Neumann, Horst [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Leipzig (Germany)

2012-07-01

Ion beam sputtering (IBS) offers, in contrast to other physical vapour deposition techniques, such as magnetron sputtering or electron beam evaporation, the opportunity to change the properties of the layer forming particles (sputtered and scattered particles) by varying ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, emission angle). Consequently, these effects can be utilized to tailor thin film properties [1]. The goal is to study systematically the correlations between the primary and secondary parameters and, at last, the effects on the properties of Si thin films, such as optical properties, stress, surface topography and composition. First experimental results are presented for Ar-ion sputtering of Si.

Laser cooling and ion beam diagnosis of relativistic ions in a storage ring

International Nuclear Information System (INIS)

Schroeder, S.

1990-08-01

Particle accelerator and storage ring technology has reached an advanced state, so that different heavy ion storage rings are coming into operation by now, capable of storing even fully stripped ions up to U 92+ . The main purpose of these machines are the accumulation of ions and the ability of improving the beam quality, that is the phase space density of the stored beams. This beam cooling is done successfully by the well established stochastic and electron cooling techniques. A new cooling method, the laser cooling, is taken over from atomic beam and ion trap experiments, where it has yielded extremely low temperatures of atomic samples. As a canditate at storage rings 7 Li + ions are stored in the Heidelberg TSR at 13.3 MeV. The ion beam properties of the metastable fraction like momentum spread, storage time and the influence of residual gas scattering are investigated by colinear laser spectroscopy in the experimental section of the TSR. An optical pumping experiment using two dye laser systems yields information about ion kinematics and velocity mixing processes in the ring. Lifetimes in the order of 100 ms for velocity classes marked in this way show that laser cooling can be applied to the stored 7 Li + beam. In an experimental situation of two strong counterpropagating laser beams, both tuned near resonance, a dramatic reduction of the ion beam momentum spread is observed. With a special geometrical control of laser and ion beam the longitudinal beam temperature is reduced from 260 K to at least 3 K with very high collection efficiency. (orig./HSI) [de

Ion-source dependence of the distributions of internuclear separations in 2-MeV HeH+ beams

International Nuclear Information System (INIS)

Kanter, E.P.; Gemmell, D.S.; Plesser, I.; Vager, Z.

1981-01-01

Experiments involving the use of MeV molecular-ion beams have yielded new information on atomic collisions in solids. A central part of the analyses of such experiments is a knowledge of the distribution of internuclear separations contained in the incident beam. In an attempt to determine how these distributions depend on ion-source gas conditions, we have studied foil-induced dissociations of H 2+ , H 3+ , HeH + , and OH 2+ ions. Although changes of ion-source gas compositions and pressure were found to have no measurable influence on the vibrational state populations of the beams reaching our target, for HeH + we found that beams produced in our rf source were vibrationally hotter than beams produced in a duoplasmatron. This was also seen in studies of neutral fragments and transmitted molecules

Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

International Nuclear Information System (INIS)

Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

1985-01-01

Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

Distribution of products in polymer materials induced by ion-beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Sugimoto, Masaki; Kudoh, Hisaaki; Sasuga, Tsuneo; Seguchi, Tadao [Japan Atomic Energy Research Inst., Tokyo (Japan); Hama, Yoshimasa; Hamanaka, Ken-ichi; Matsumoto, Hideya

1997-03-01

The depth profile of double bond formed in low density polyethylene (LDPE) sheet by ion beams irradiation was observed by a micro FT-IR spectrometer in order to investigate the linear energy transfer (LET) dependency on radiation effects to polymer materials. The distribution of double bond formation in LDPE by irradiation of light ions as H+ was found to be same with the dose distribution calculated from TRIM code, and the yield was also same with that by gamma-rays irradiation, which means that the LET dependency is very small. However, the distribution of double bond to depth was much different from the calculated depth-dose in heavy ions irradiation as Ar and Kr. Then, the dose evaluation was difficult from the TRIM code calculation for heavy ions. (author)

Important atomic physics issues for ion beam fusion

International Nuclear Information System (INIS)

Bangerter, Roger.

1986-01-01

The nearly endless variety of interesting and challenging problems makes physics research enjoyable. Most of us would choose to be physicists even if physics had no practical applications. However, physics does have practical applications. This workshop deals with one of those applications, namely ion beam fusion. Not all interesting and challenging atomic physics questions are important for ion beam fusion. This paper suggests some questions that may be important for ion beam fusion. It also suggests some criteria for determining if a question is only interesting, or both interesting and important. Importance is time dependent and, because of some restrictions on the flow of information, also country dependent. In the early days of ion beam fusion, it was important to determine if ion beam fusion made sense. Approximate answers and bounds on various parameters were required. Accurate, detailed answers were not needed. Because of the efforts of many people attending this workshop, we now know that ion beam fusion does make some sense. We must still determine if ion beam fusion truly makes good sense. If it does make good sense, we must determine how to make it work. Accurate detailed answers are becoming increasingly important. (author)

In situ characterization of thermal conductivities of irradiated solids by using ion beam heating and infrared imaging

Energy Technology Data Exchange (ETDEWEB)

Mondrik, Nicholas; Gigax, Jonathan; Wang, Xuemei; Price, Lloyd [Department of Nuclear Engineering, Texas A and M University, College Station, TX 77843 (United States); Wei, Chaochen [Materials Science and Engineering Department, Texas A and M University, College Station, TX 77843 (United States); Shao, Lin, E-mail: lshao@tamu.edu [Department of Nuclear Engineering, Texas A and M University, College Station, TX 77843 (United States); Materials Science and Engineering Department, Texas A and M University, College Station, TX 77843 (United States)

2014-08-01

We propose a method to characterize thermal properties of ion irradiated materials. This method uses an ion beam as a heating source to create a hot spot on sample surface. Infrared imaging is used as a surface temperature mapping tool to record hot zone spreading. Since ion energy, ion flux, and ion penetration depth can be precisely controlled, the beam heating data is highly reliable and repeatable. Using a high speed infrared camera to capture lateral spreading of the hot zone, thermal diffusivity can be readily extracted. The proposed method has advantages in studying radiation induced thermal property changes, for which radiation damage can be introduced by using an irradiating beam over a relatively large beam spot and beam heating can be introduced by using a focused testing beam over a relatively small beam spot. These two beams can be switched without breaking vacuum. Thus thermal conductivity changes can be characterized in situ with ion irradiation. The feasibility of the technique is demonstrated on a single crystal quartz substrate.

In situ characterization of thermal conductivities of irradiated solids by using ion beam heating and infrared imaging

International Nuclear Information System (INIS)

Mondrik, Nicholas; Gigax, Jonathan; Wang, Xuemei; Price, Lloyd; Wei, Chaochen; Shao, Lin

2014-01-01

We propose a method to characterize thermal properties of ion irradiated materials. This method uses an ion beam as a heating source to create a hot spot on sample surface. Infrared imaging is used as a surface temperature mapping tool to record hot zone spreading. Since ion energy, ion flux, and ion penetration depth can be precisely controlled, the beam heating data is highly reliable and repeatable. Using a high speed infrared camera to capture lateral spreading of the hot zone, thermal diffusivity can be readily extracted. The proposed method has advantages in studying radiation induced thermal property changes, for which radiation damage can be introduced by using an irradiating beam over a relatively large beam spot and beam heating can be introduced by using a focused testing beam over a relatively small beam spot. These two beams can be switched without breaking vacuum. Thus thermal conductivity changes can be characterized in situ with ion irradiation. The feasibility of the technique is demonstrated on a single crystal quartz substrate

The application of ion beams to corrosion science

International Nuclear Information System (INIS)

Ashworth, V.; Grant, W.A.; Proctor, R.P.M.

1976-01-01

Briefly, the paper provides some basic information on the use of ion beams for surface alloying and surface analysis. After a brief historical review of those fields in which the techniques are already widely applied the important features of typical ion beam machines are described. The basic processes that occur when an ion beam strikes a solid are then considered. Selected ion beam analysis techniques are then discussed. Attention is drawn, wherever possible, to applications in corrosion science and engineering. (author)

High-powered pulsed-ion-beam acceleration and transport

Energy Technology Data Exchange (ETDEWEB)

Humphries, S. Jr.; Lockner, T.R.

1981-11-01

The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized.

High-powered pulsed-ion-beam acceleration and transport

International Nuclear Information System (INIS)

Humphries, S. Jr.; Lockner, T.R.

1981-11-01

The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized

A new route to nanoscale tomographic chemical analysis: Focused ion beam-induced auger electron spectrosocpy

Science.gov (United States)

Parvaneh, Hamed

This research project is aimed to study the application of ion-induced Auger electron spectroscopy (IAES) in combination with the characteristics of focused ion beam (FIB) microscopy for performing chemical spectroscopy and further evaluate its potential for 3-dimensional chemical tomography applications. The mechanism for generation of Auger electrons by bombarding ions is very different from its electron induced counterpart. In the conventional electron-induced Auger electron spectroscopy (EAES), an electron beam with energy typically in the range 1-10kV is used to excite inner-shell (core) electrons of the solid. An electron from a higher electron energy state then de-excites to fill the hole and the extra energy is then transferred to either another electron, i.e. the Auger electron, or generation of an X-ray (photon). In both cases the emitting particles have charac-teristic energies and could be used to identify the excited target atoms. In IAES, however, large excitation cross sections can occur by promotion of in-ner shell electrons through crossing of molecular orbitals. Originally such phenomenological excitation processes were first proposed [3] for bi-particle gas phase collision systems to explain the generation of inner shell vacancies in violent collisions. In addition to excitation of incident or target atoms, due to a much heavier mass of ions compared to electrons, there would also be a substantial momentum transfer from the incident to the target atoms. This may cause the excited target atom to recoil from the lattice site or alternatively sputter off the surface with the possibility of de-excitation while the atom is either in motion in the matrix or traveling in vacuum. As a result, one could expect differences between the spectra induced by incident electrons and ions and interpretation of the IAE spectra requires separate consideration of both excitation and decay processes. In the first stage of the project, a state-of-the-art mass

Fabrication of high aspect ratio nanocell lattices by ion beam irradiation

International Nuclear Information System (INIS)

Ishikawa, Osamu; Nitta, Noriko; Taniwaki, Masafumi

2016-01-01

Highlights: • Nanocell lattice with a high aspect ratio on InSb semiconductor surface was fabricated by ion beam irradiation. • The fabrication technique consisting of top-down and bottom-up processes was performed in FIB. • High aspect ratio of 2 was achieved in nanocell lattice with a 100 nm interval. • The intermediate-flux irradiation is favorable for fabrication of nanocell with a high aspect ratio. - Abstract: A high aspect ratio nanocell lattice was fabricated on the InSb semiconductor surface using the migration of point defects induced by ion beam irradiation. The fabrication technique consisting of the top-down (formation of voids and holes) and bottom-up (growth of voids and holes into nanocells) processes was performed using a focused ion beam (FIB) system. A cell aspect ratio of 2 (cell height/cell diameter) was achieved for the nanocell lattice with a 100 nm dot interval The intermediate-flux ion irradiation during the bottom-up process was found to be optimal for the fabrication of a high aspect ratio nanocell.

Ion Beams in Nanoscience and Technology

CERN Document Server

Hellborg, Ragnar

2010-01-01

Energetic ion beam irradiation is the basis of a wide plethora of powerful research- and fabrication-techniques for materials characterisation and processing on a nanometre scale. This book is suitable for practitioners, researchers and graduate students working in the field of ion beams and application

Tool steel ion beam assisted nitrocarburization

International Nuclear Information System (INIS)

Zagonel, L.F.; Alvarez, F.

2007-01-01

The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

In-situ capability of ion beam modification and characterization of materials at Los Alamos National Laboratory

International Nuclear Information System (INIS)

Yu, N.; Nastasi, M.; Tesmer, J.R.; Hollander, M.G.; Evans, C.R.; Maggiore, C.J.; Levine, T.E.

1994-01-01

The capability of in-situ ion beam modification and characterization of materials developed at Los Alamos National Laboratory is described. A beam-line from a 3 MV tandem accelerator and a beam-line from a 200 kV ion implanter are joined together in an in-situ target chamber. The chamber is equipped with a cold and hot sample stage with a temperature range from -100 to 500 C. The angular (sample spin and basal rotation) motions and translational motions of the sample stage are controlled by a multi-axis goniometer. This chamber provides a unique capability to conduct a temperature dependent experiment of ion irradiation and sequential backscattering and channeling analysis. The efficiency and reliability of in-situ ion beam techniques are demonstrated by two examples, irradiation damage in (100) MgAl 2 O 4 spinel crystals and ion-beam-induced densification of zirconia sol-gel thin films

Design study of primary ion provider for relativistic heavy ion collider electron beam ion source.

Science.gov (United States)

Kondo, K; Kanesue, T; Tamura, J; Okamura, M

2010-02-01

Brookhaven National Laboratory has developed the new preinjector system, electron beam ion source (EBIS) for relativistic heavy ion collider (RHIC) and National Aeronautics and Space Administration Space Radiation Laboratory. Design of primary ion provider is an essential problem since it is required to supply beams with different ion species to multiple users simultaneously. The laser ion source with a defocused laser can provide a low charge state and low emittance ion beam, and is a candidate for the primary ion source for RHIC-EBIS. We show a suitable design with appropriate drift length and solenoid, which helps to keep sufficient total charge number with longer pulse length. The whole design of primary ion source, as well as optics arrangement, solid targets configuration and heating about target, is presented.

A three-dimensional relaxation model for calculation of atomic mixing and topography changes induces by ion beams

International Nuclear Information System (INIS)

Collins, R.; Perez-Martin, A.M.C.; Dominguez-Vazquez, J.; Jimenez-Rodriguez, J.J.

1994-01-01

A simple model for three-dimensional material relaxation associated with atomic mixing is presented. The relaxation of the solid to accommodate the extra effective displacement volume Ω of an implanted or relocated atom is modelled by treating the surrounding solid as an incompressible medium. This leads to a tractable general formalism which can be used to predict implant distribution and changes in surface topography induced by ion beams, both in monatomic and multicomponent targets. The two-component case is discussed in detail. (orig.)

Beam modulation for heavy ion radiotherapy

International Nuclear Information System (INIS)

Kanai, T.; Minohara, S.; Sudou, M.

1993-01-01

The first clinical trial of heavy ion radiation therapy is scheduled in 1994 by using the heavy ion medical accelerator in Chiba (HIMAC). In order to start the clinical trial, first, it is necessary to know the physical characteristics of high energy heavy ions in human bodies, for example, dose and linear energy transfer (LET) distribution. Also the knowledge on the biological effectiveness of heavy ions is required. Based on these biophysical properties of heavy ions, monoenergetic heavy ion beam should be modulated so as to make the spread Bragg peak suitable to heavy ion radiation therapy. In order to establish a methodology to obtain the most effective spread Bragg peak for heavy ion radiation therapy, a heavy ion irradiation port at the RIKEN ring cyclotron facility was constructed. By using a 135 MeV/u carbon beam, the biophysical properties of the heavy ions were investigated, and a range modulator was designed to have uniform biological response in the spread Bragg peak. The physical and biological rationality of the spread Bragg peak were investigated. The dose, LET and biological effect of a monoenergetic heavy ion beam, the design of the range modulator, and the distributions of LET and biological dose for the spread Bragg peak are reported. (K.I.)

Study of beam optics and beam halo by integrated modeling of negative ion beams from plasma meniscus formation to beam acceleration

International Nuclear Information System (INIS)

Miyamoto, K.; Okuda, S.; Hatayama, A.; Hanada, M.; Kojima, A.

2013-01-01

To understand the physical mechanism of the beam halo formation in negative ion beams, a two-dimensional particle-in-cell code for simulating the trajectories of negative ions created via surface production has been developed. The simulation code reproduces a beam halo observed in an actual negative ion beam. The negative ions extracted from the periphery of the plasma meniscus (an electro-static lens in a source plasma) are over-focused in the extractor due to large curvature of the meniscus.

Study of beam optics and beam halo by integrated modeling of negative ion beams from plasma meniscus formation to beam acceleration

Energy Technology Data Exchange (ETDEWEB)

Miyamoto, K. [Naruto University of Education, 748 Nakashima, Takashima, Naruto-cho, Naruto-shi, Tokushima 772-8502 (Japan); Okuda, S.; Hatayama, A. [Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); Hanada, M.; Kojima, A. [Japan Atomic Energy Agency, 801-1 Mukouyama, Naka 319-0913 (Japan)

2013-01-14

To understand the physical mechanism of the beam halo formation in negative ion beams, a two-dimensional particle-in-cell code for simulating the trajectories of negative ions created via surface production has been developed. The simulation code reproduces a beam halo observed in an actual negative ion beam. The negative ions extracted from the periphery of the plasma meniscus (an electro-static lens in a source plasma) are over-focused in the extractor due to large curvature of the meniscus.

Lithium ion beam driven hohlraums for PBFA II

International Nuclear Information System (INIS)

Dukart, R.J.

1994-01-01

In our light ion inertial confinement fusion (ICF) program, fusion capsules are driven with an intense x-ray radiation field produced when an intense beam of ions penetrates a radiation case and deposits energy in a foam x-ray conversion region. A first step in the program is to generate and measure these intense fields on the Particle Beam Fusion Accelerator II (PBFA II). Our goal is to generate a 100-eV radiation temperature in lithium ion beam driven hohlraums, the radiation environment which will provide the initial drive temperature for ion beam driven implosion systems designed to achieve high gain. In this paper, we describe the design of such hohlraum targets and their predicted performance on PBFA II as we provide increasing ion beam intensities

Negative ion beam extraction in ROBIN

International Nuclear Information System (INIS)

Bansal, Gourab; Gahlaut, Agrajit; Soni, Jignesh; Pandya, Kaushal; Parmar, Kanu G.; Pandey, Ravi; Vuppugalla, Mahesh; Prajapati, Bhavesh; Patel, Amee; Mistery, Hiren; Chakraborty, Arun; Bandyopadhyay, Mainak; Singh, Mahendrajit J.; Phukan, Arindam; Yadav, Ratnakar K.; Parmar, Deepak

2013-01-01

Highlights: ► A RF based negative hydrogen ion beam test bed has been set up at IPR, India. ► Ion source has been successfully commissioned and three campaigns of plasma production have been carried out. ► Extraction system (35 kV) has been installed and commissioning has been initiated. Negative ion beam extraction is immediate milestone. -- Abstract: The RF based single driver −ve ion source experiment test bed ROBIN (Replica Of BATMAN like source in INDIA) has been set up at Institute for Plasma Research (IPR), India in a technical collaboration with IPP, Garching, Germany. A hydrogen plasma of density 5 × 10 12 cm −3 is expected in driver region of ROBIN by launching 100 kW RF power into the driver by 1 MHz RF generator. The cesiated source is expected to deliver a hydrogen negative ion beam of 10 A at 35 kV with a current density of 35 mA/cm 2 as observed in BATMAN. In first phase operation of the ROBIN ion source, a hydrogen plasma has been successfully generated (without extraction system) by coupling 80 kW RF input power through a matching network with high power factor (cos θ > 0.8) and different plasma parameters have been measured using Langmuir probes and emission spectroscopy. The plasma density of 2.5 × 10 11 cm −3 has been measured in the extraction region of ROBIN. For negative hydrogen ion beam extraction in second phase operation, extraction system has been assembled and installed with ion source on the vacuum vessel. The source shall be first operated in volume mode for negative ion beam extraction. The commissioning of the source with high voltage power supply has been initiated

Ion beam nanopatterning and micro-Raman spectroscopy analysis on HOPG for testing FIB performances

International Nuclear Information System (INIS)

Archanjo, B.S.; Maciel, I.O.; Martins Ferreira, E.H.; Peripolli, S.B.; Damasceno, J.C.; Achete, C.A.; Jorio, A.

2011-01-01

This work reports Ga + focused ion beam nanopatterning to create amorphous defects with periodic square arrays in highly oriented pyrolytic graphite and the use of Raman spectroscopy as a new protocol to test and compare progresses in ion beam optics, for low fluence bombardment or fast writing speed. This can be ultimately used as a metrological tool for comparing different FIB machines and can contribute to Focused Ion Beam (FIB) development in general for tailoring nanostructures with higher precision. In order to do that, the amount of ion at each spot was varied from about 10 6 down to roughly 1 ion per dot. These defects were also analyzed by using high resolution scanning electron microscopy and atomic force microscopy. The sensitivities of these techniques were compared and a geometrical model is proposed for micro-Raman spectroscopy in which the intensity of the defect induced D band, for a fixed ion dose, is associated with the diameter of the ion beam. In addition, the lateral increase in the bombarded spot due to the cascade effect of the ions on graphite surface was extracted from this model. A semi-quantitative analysis of the distribution of ions at low doses per dot or high writing speed for soft modification of materials is discussed. -- Highlights: → Highly oriented pyrolytic graphite surface is bombarded using a focused ion beam. → Raman spectroscopy is used to propose a new protocol to test focused ion beam optics. → Scattering diameter of the ions on HOPG surface is experimentally obtained. → Optical limitations of the ion column in fast writing speed are discussed. → Small level of modifications is considered for changing graphene conductive properties.

MHD-induced Energetic Ion Loss during H-mode Discharges in the National Spherical Torus Experiment (NSTX)

International Nuclear Information System (INIS)

Medley, S.S.; Gorelenkov, N.N.; Andre, R.; Bell, R.E.; Darrow, D.S.; Fredrickson, E.D.; Kaye, S.M.; LeBlanc, B.P.; Roquemore, A.L.

2004-01-01

MHD-induced energetic ion loss in neutral-beam-heated H-mode [high-confinement mode] discharges in NSTX [National Spherical Torus Experiment] is discussed. A rich variety of energetic ion behavior resulting from magnetohydrodynamic (MHD) activity is observed in the NSTX using a horizontally scanning Neutral Particle Analyzer (NPA) whose sightline views across the three co-injected neutral beams. For example, onset of an n = 2 mode leads to relatively slow decay of the energetic ion population (E ∼ 10-100 keV) and consequently the neutron yield. The effect of reconnection events, sawteeth, and bounce fishbones differs from that observed for low-n, low-frequency, tearing-type MHD modes. In this case, prompt loss of the energetic ion population occurs on a time scale of less than or equal to 1 ms and a precipitous drop in the neutron yield occurs. This paper focuses on MHD-induced ion loss during H-mode operation in NSTX. After H-mode onset, the NPA charge-exchange spectrum usually exhibits a significant loss of energetic ions only for E > E(sub)b/2 where E(sub)b is the beam injection energy. The magnitude of the energetic ion loss was observed to decrease with increasing tangency radius, R(sub)tan, of the NPA sightline, increasing toroidal field, B(sub)T, and increasing neutral-beam injection energy, E(sub)b. TRANSP modeling suggests that MHD-induced ion loss is enhanced during H-mode operation due to an evolution of the q and beam deposition profiles that feeds both passing and trapped ions into the region of low-n MHD activity. ORBIT code analysis of particle interaction with a model magnetic perturbation supported the energy selectivity of the MHD-induced loss observed in the NPA measurements. Transport analysis with the TRANSP code using a fast-ion diffusion tool to emulate the observed MHD-induced energetic ion loss showed significant modifications of the neutral- beam heating as well as the power balance, thermal diffusivities, energy confinement times, and

MHD-induced Energetic Ion Loss during H-mode Discharges in the National Spherical Torus Experiment (NSTX)

Energy Technology Data Exchange (ETDEWEB)

S.S. Medley; N.N. Gorelenkov; R. Andre; R.E. Bell; D.S. Darrow; E.D. Fredrickson; S.M. Kaye; B.P. LeBlanc; A.L. Roquemore; and the NSTX Team

2004-03-15

MHD-induced energetic ion loss in neutral-beam-heated H-mode [high-confinement mode] discharges in NSTX [National Spherical Torus Experiment] is discussed. A rich variety of energetic ion behavior resulting from magnetohydrodynamic (MHD) activity is observed in the NSTX using a horizontally scanning Neutral Particle Analyzer (NPA) whose sightline views across the three co-injected neutral beams. For example, onset of an n = 2 mode leads to relatively slow decay of the energetic ion population (E {approx} 10-100 keV) and consequently the neutron yield. The effect of reconnection events, sawteeth, and bounce fishbones differs from that observed for low-n, low-frequency, tearing-type MHD modes. In this case, prompt loss of the energetic ion population occurs on a time scale of less than or equal to 1 ms and a precipitous drop in the neutron yield occurs. This paper focuses on MHD-induced ion loss during H-mode operation in NSTX. After H-mode onset, the NPA charge-exchange spectrum usually exhibits a significant loss of energetic ions only for E > E(sub)b/2 where E(sub)b is the beam injection energy. The magnitude of the energetic ion loss was observed to decrease with increasing tangency radius, R(sub)tan, of the NPA sightline, increasing toroidal field, B(sub)T, and increasing neutral-beam injection energy, E(sub)b. TRANSP modeling suggests that MHD-induced ion loss is enhanced during H-mode operation due to an evolution of the q and beam deposition profiles that feeds both passing and trapped ions into the region of low-n MHD activity. ORBIT code analysis of particle interaction with a model magnetic perturbation supported the energy selectivity of the MHD-induced loss observed in the NPA measurements. Transport analysis with the TRANSP code using a fast-ion diffusion tool to emulate the observed MHD-induced energetic ion loss showed significant modifications of the neutral- beam heating as well as the power balance, thermal diffusivities, energy confinement times

Ion beam modification of biological materials in nanoscale

Science.gov (United States)

Yu, L. D.; Anuntalabhochai, S.

2012-07-01

Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.