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Sample records for ion beam induces

  1. Characterization of ion beam induced nanostructures

    International Nuclear Information System (INIS)

    Ghatak, J.; Satpati, B.; Umananda, M.; Kabiraj, D.; Som, T.; Dev, B.N.; Akimoto, K.; Ito, K.; Emoto, T.; Satyam, P.V.

    2006-01-01

    Tailoring of nanostructures with energetic ion beams has become an active area of research leading to the fundamental understanding of ion-solid interactions at nanoscale regime and with possible applications in the near future. Rutherford backscattering spectrometry (RBS), high resolution transmission electron microscopy (HRTEM) and asymmetric X-ray Bragg-rocking curve experimental methods have been used to characterize ion-induced effects in nanostructures. The possibility of surface and sub-surface/interface alloying at nano-scale regime, ion-beam induced embedding, crater formation, sputtering yield variations for systems with isolated nanoislands, semi-continuous and continuous films of noble metals (Au, Ag) deposited on single crystalline silicon will be reviewed. MeV-ion induced changes in specified Au-nanoislands on silicon substrate are tracked as a function of ion fluence using ex situ TEM. Strain induced in the bulk silicon substrate surface due to 1.5 MeV Au 2+ and C 2+ ion beam irradiation is determined by using HRTEM and asymmetric Bragg X-ray rocking curve methods. Preliminary results on 1.5 MeV Au 2+ ion-induced effects in nanoislands of Co deposited on silicon substrate will be discussed

  2. Time resolved ion beam induced charge collection

    International Nuclear Information System (INIS)

    Sexton W, Frederick; Walsh S, David; Doyle L, Barney; Dodd E, Paul

    2000-01-01

    Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a -.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients

  3. Time resolved ion beam induced charge collection

    Energy Technology Data Exchange (ETDEWEB)

    SEXTON,FREDERICK W.; WALSH,DAVID S.; DOYLE,BARNEY L.; DODD,PAUL E.

    2000-04-01

    Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a {minus}.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients.

  4. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  5. Ion beam induced stress formation and relaxation in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2013-07-15

    Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

  6. Graphene defects induced by ion beam

    Science.gov (United States)

    Gawlik, Grzegorz; Ciepielewski, Paweł; Baranowski, Jacek; Jagielski, Jacek

    2017-10-01

    The CVD graphene deposited on the glass substrate was bombarded by molecular carbon ions C3+ C6+ hydrocarbon ions C3H4+ and atomic ions He+, C+, N+, Ar+, Kr+ Yb+. Size and density of ion induced defects were estimated from evolution of relative intensities of Raman lines D (∼1350 1/cm), G (∼1600 1/cm), and D‧ (∼1620 1/cm) with ion fluence. The efficiency of defect generation by atomic ions depend on ion mass and energy similarly as vacancy generation directly by ion predicted by SRIM simulations. However, efficiency of defect generation in graphene by molecular carbon ions is essentially higher than summarized efficiency of similar group of separate atomic carbon ions of the same energy that each carbon ion in a cluster. The evolution of the D/D‧ ratio of Raman lines intensities with ion fluence was observed. This effect may indicate evolution of defect nature from sp3-like at low fluence to a vacancy-like at high fluence. Observed ion graphene interactions suggest that the molecular ion interacts with graphene as single integrated object and should not be considered as a group of atomic ions with partial energy.

  7. Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

    Science.gov (United States)

    Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

    2012-02-01

    Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

  8. Mutation induced with ion beam irradiation in rose

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, H. E-mail: yhiroya@nias.affrc.go.jp; Nagatomi, S.; Morishita, T.; Degi, K.; Tanaka, A.; Shikazono, N.; Hase, Y

    2003-05-01

    The effects of mutation induction by ion beam irradiation on axillary buds in rose were investigated. Axillary buds were irradiated with carbon and helium ion beams, and the solid mutants emerged after irradiation by repeated cutting back. In helium ion irradiation, mutations were observed in plants derived from 9 buds among 56 irradiated buds in 'Orange Rosamini' and in plants derived from 10 buds among 61 irradiated buds in 'Red Minimo'. In carbon ion, mutations were observed in plants derived from 12 buds among 88 irradiated buds in 'Orange Rosamini'. Mutations were induced not only in higher doses but also in lower doses, with which physiological effect by irradiation was hardly observed. Irradiation with both ion beams induced mutants in the number of petals, in flower size, in flower shape and in flower color in each cultivar.

  9. Ion beam induced luminescence: Relevance to radiation induced bystander effects

    Science.gov (United States)

    Ahmad, S. B.; McNeill, F. E.; Byun, S. H.; Prestwich, W. V.; Seymour, C.; Mothersill, C. E.

    2012-10-01

    The aim of this work is quantify the light emitted as a result of charged particle interaction in materials which may be of relevance to radiation induced "bystander effects" studies. We have developed a system which employs single photon counting to measure the light emitted from samples irradiated under vacuum by a charged particle beam. The system uses a fast photomultiplier tube with a peak cathode response at 420 nm. It has been tested in a proof-of-principle experiment using polystyrene targets. Light output, as a result of irradiation, was measured. The luminescence yield appears to have a non-linear behavior with the incident ion fluence: it rises exponentially to an asymptotic value. The target was irradiated with beam energies varying from 1 to 2 MeV and showed saturation at or before an incident fluence rate of 3 × 1013 H+/cm2 s. The average saturation value for the photon output was found to be 40 × 106 cps. Some measurements were performed using filters to study the emission at specific wavelengths. In the case of filtered light measurements, the photon output was found to saturate at 28 × 103, 10 × 106, and 35 × 106 cps for wavelengths of 280 ± 5 nm, 320 ± 5 nm and 340 ± 5 nm respectively. The light output reaches a maximum value because of damage induced in the polymer. Our measurements indicate a "damage cross section" of the order of 10-14 cm2. The average radiant intensity was found to increase at wavelengths of 280 and 320 nm when the proton energy was increased. This was not found to occur at 340 nm. In conclusion, the light emission at specific wavelengths was found to depend upon the incident proton fluence and the proton energy. The wavelengths of the emitted light measured in this study have significance for the understanding of radiation induced bystander effects.

  10. Atomistic modeling of ion beam induced amorphization in silicon

    International Nuclear Information System (INIS)

    Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria; Barbolla, Juan

    2005-01-01

    Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work, we briefly describe the existing phenomenological and defect-based amorphization models. We focus on the atomistic model we have developed to describe ion beam induced amorphization in Si. In our model, the building block for the amorphous phase is the bond defect or IV pair, whose stability increases with the number of surrounding IV pairs. This feature explains the regrowth behavior of different damage topologies and the kinetics of the crystalline to amorphous transition. The model provides excellent quantitative agreement with experimental results

  11. Ion beam induced luminescence: Relevance to radiation induced bystander effects

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, S.B., E-mail: ahmad.rabilal@gmail.com [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); McNeill, F.E., E-mail: fmcneill@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); Byun, S.H., E-mail: soohyun@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); Prestwich, W.V., E-mail: prestwic@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); Seymour, C., E-mail: seymouc@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada); Mothersill, C.E., E-mail: mothers@mcmaster.ca [Medical Physics and Applied Radiation Sciences, University of McMaster, Hamilton, Ontario (Canada)

    2012-10-01

    The aim of this work is quantify the light emitted as a result of charged particle interaction in materials which may be of relevance to radiation induced 'bystander effects' studies. We have developed a system which employs single photon counting to measure the light emitted from samples irradiated under vacuum by a charged particle beam. The system uses a fast photomultiplier tube with a peak cathode response at 420 nm. It has been tested in a proof-of-principle experiment using polystyrene targets. Light output, as a result of irradiation, was measured. The luminescence yield appears to have a non-linear behavior with the incident ion fluence: it rises exponentially to an asymptotic value. The target was irradiated with beam energies varying from 1 to 2 MeV and showed saturation at or before an incident fluence rate of 3 Multiplication-Sign 10{sup 13} H{sup +}/cm{sup 2} s. The average saturation value for the photon output was found to be 40 Multiplication-Sign 10{sup 6} cps. Some measurements were performed using filters to study the emission at specific wavelengths. In the case of filtered light measurements, the photon output was found to saturate at 28 Multiplication-Sign 10{sup 3}, 10 Multiplication-Sign 10{sup 6}, and 35 Multiplication-Sign 10{sup 6} cps for wavelengths of 280 {+-} 5 nm, 320 {+-} 5 nm and 340 {+-} 5 nm respectively. The light output reaches a maximum value because of damage induced in the polymer. Our measurements indicate a 'damage cross section' of the order of 10{sup -14} cm{sup 2}. The average radiant intensity was found to increase at wavelengths of 280 and 320 nm when the proton energy was increased. This was not found to occur at 340 nm. In conclusion, the light emission at specific wavelengths was found to depend upon the incident proton fluence and the proton energy. The wavelengths of the emitted light measured in this study have significance for the understanding of radiation induced bystander effects.

  12. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A A; Jamieson, D N; Prawer, S; Allen, M G [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1994-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  13. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Jamieson, D. N.; Prawer, S.; Allen, M.G. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  14. Ion and laser beam induced metastable alloy formation

    International Nuclear Information System (INIS)

    Westendorp, J.F.M.

    1986-01-01

    This thesis deals with ion and laser beam induced thin film mixing. It describes the development of an Ultra High Vacuum apparatus for deposition, ion irradiation and in situ analysis of thin film sandwiches. This chamber has been developed in close collaboration with High Voltage Engineering Europa. Thin films can be deposited by an e-gun evaporator. The atom flux is monitored by a quadrupole mass spectrometer. A comparison is made between ion beam and laser mixing of Cu with Au and Cu with W. The comparison provides a better understanding of the relative importance of purely collisional mixing, the role of thermodynamic effects and the contribution of diffusion due to defect generation and migration. (Auth.)

  15. Ion-beam induced structure modifications in amorphous germanium

    International Nuclear Information System (INIS)

    Steinbach, Tobias

    2012-01-01

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy ε n deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 μm thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of ε e HRF =(10.5±1.0) kev nm -1 was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation ε e S a =(12±2) keV nm -1 for the first time extracted for a Ge the characteristic linear behaviour of the

  16. Ion beam induced fluorescence imaging in biological systems

    International Nuclear Information System (INIS)

    Bettiol, Andrew A.; Mi, Zhaohong; Vanga, Sudheer Kumar; Chen, Ce-belle; Tao, Ye; Watt, Frank

    2015-01-01

    Imaging fluorescence generated by MeV ions in biological systems such as cells and tissue sections requires a high resolution beam (<100 nm), a sensitive detection system and a fluorescent probe that has a high quantum efficiency and low bleaching rate. For cutting edge applications in bioimaging, the fluorescence imaging technique needs to break the optical diffraction limit allowing for sub-cellular structure to be visualized, leading to a better understanding of cellular function. In a nuclear microprobe this resolution requirement can be readily achieved utilizing low beam current techniques such as Scanning Transmission Ion Microscopy (STIM). In recent times, we have been able to extend this capability to fluorescence imaging through the development of a new high efficiency fluorescence detection system, and through the use of new novel fluorescent probes that are resistant to ion beam damage (bleaching). In this paper we demonstrate ion beam induced fluorescence imaging in several biological samples, highlighting the advantages and challenges associated with using this technique

  17. Focused ion beam induced deflections of freestanding thin films

    International Nuclear Information System (INIS)

    Kim, Y.-R.; Chen, P.; Aziz, M. J.; Branton, D.; Vlassak, J. J.

    2006-01-01

    Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50 keV gallium focused ion beam for ion doses between 10 14 and 10 17 ions/cm 2 . Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding depressions of comparable magnitude on the back side, thus indicating that what at first appeared to be protrusions are actually the result of membrane deflections. The shape in high-stress silicon nitride is remarkably flat-topped and differs from that in low-stress silicon nitride. Ion beam induced biaxial compressive stress generation, which is a known deformation mechanism for other amorphous materials at higher ion energies, is hypothesized to be the origin of the deflection. A continuum mechanical model based on this assumption convincingly reproduces the profiles for both low-stress and high-stress membranes and provides a family of unusual shapes that can be created by deflection of freestanding thin films under beam irradiation

  18. Stress-tolerant mutants induced by heavy-ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Abe, Tomoko; Yoshida, Shigeo [Institute of Physical and Chemical Research, Wako, Saitama (Japan); Bae, Chang-Hyu [Sunchon National University, Sunchon (Korea); Ozaki, Takuo [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Wang, Jing Ming [Akita Prefectural Univ. (Japan)

    2000-07-01

    Comparative study was made on mutagenesis in tobacco embryo induced by exposure to EMS (ethyl methane-sulfonate) ion beams during the fertilization cycle. Tobacco embryo cells immediately after pollination were exposed to heavy ion beam and the sensitivity to the irradiation was assessed in each developmental stage and compared with the effects of EMS, a chemical mutagen. Morphologically abnormality such as chlorophyll deficiency was used as a marker. A total of 17 salt-tolerant plants were selected from 3447 M{sub 1} seeds. A cell line showed salt resistance. The cell growth and chlorophyll content were each two times higher than that of WT cells in the medium containing 154 mM NaCl. Seven strains of M{sub 3} progeny of 17 salt-tolerant plants, showed strong resistance, but no salt tolerant progeny were obtained from Xanthi or Ne-ion irradiation. This shows that the sensitivity of plant embryo to this irradiation technique may vary among species. When exposed to {sup 14}N ion beam for 24-108 hours after pollination, various morphological mutants appeared at 18% in M{sub 1} progeny and herbicide tolerant and salt tolerant mutants were obtained. A strong Co-tolerant strain was obtained in two of 17 salt-tolerant strains and a total of 46 tolerant strains (0.2%) were obtained from 22,272 grains of M{sub 1} seeds. In these tolerant strains, the absorption of Co was slightly decreased, but those of Mg and Mn were increased. Mutants induced with ion-beam irradiation have potential not only for practical use in the breeding of stress-tolerant plants but also for gene analysis that will surely facilitate the molecular understanding of the tolerance mechanisms. (M.N.)

  19. Stress-tolerant mutants induced by heavy-ion beams

    International Nuclear Information System (INIS)

    Abe, Tomoko; Yoshida, Shigeo; Bae, Chang-Hyu; Ozaki, Takuo

    2000-01-01

    Comparative study was made on mutagenesis in tobacco embryo induced by exposure to EMS (ethyl methane-sulfonate) ion beams during the fertilization cycle. Tobacco embryo cells immediately after pollination were exposed to heavy ion beam and the sensitivity to the irradiation was assessed in each developmental stage and compared with the effects of EMS, a chemical mutagen. Morphologically abnormality such as chlorophyll deficiency was used as a marker. A total of 17 salt-tolerant plants were selected from 3447 M 1 seeds. A cell line showed salt resistance. The cell growth and chlorophyll content were each two times higher than that of WT cells in the medium containing 154 mM NaCl. Seven strains of M 3 progeny of 17 salt-tolerant plants, showed strong resistance, but no salt tolerant progeny were obtained from Xanthi or Ne-ion irradiation. This shows that the sensitivity of plant embryo to this irradiation technique may vary among species. When exposed to 14 N ion beam for 24-108 hours after pollination, various morphological mutants appeared at 18% in M 1 progeny and herbicide tolerant and salt tolerant mutants were obtained. A strong Co-tolerant strain was obtained in two of 17 salt-tolerant strains and a total of 46 tolerant strains (0.2%) were obtained from 22,272 grains of M 1 seeds. In these tolerant strains, the absorption of Co was slightly decreased, but those of Mg and Mn were increased. Mutants induced with ion-beam irradiation have potential not only for practical use in the breeding of stress-tolerant plants but also for gene analysis that will surely facilitate the molecular understanding of the tolerance mechanisms. (M.N.)

  20. Ion beam induced luminescence characterisation of CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A A; Gonon, P; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

  1. Ion beam induced luminescence characterisation of CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Gonon, P.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

  2. Investigations on ion-beam induced desorption from cryogenic surfaces

    International Nuclear Information System (INIS)

    Maurer, Christoph

    2017-01-01

    pumps can be taken into account. This method can be extended to any desorption experiment employing the single shot method for measurement. Of special interest for the operation of the SIS100 at high intensities is the minimization of desorption from cryogenic surfaces. A previous examination of this topic found a breakdown of the familiar scaling of the desorption yield with the beam's energy loss for cryogenic targets. Further examination of this effect with the techniques described above is another goal of this thesis. Simultaneously, desorption measurements at room temperature for several other targets have been conducted. An unexpected result of these experiments is the influence of target surface properties, which was found to be very weak in comparison to previous results. The methods developed during this thesis, along with the results gained by their application, represent another step towards the comprehension of (heavy) ion beam induced desorption.

  3. Ion beam induced effects on the ferromagnetism in Pd nanoparticles

    International Nuclear Information System (INIS)

    Kulriya, P. K.; Mehta, B. R.; Agarwal, D. C.; Agarwal, Kanika; Kumar, Praveen; Shivaprasad, S. M.; Avasthi, D. K.

    2012-01-01

    Present study demonstrates the role of metal-insulator interface and ion irradiation induced defects on the ferromagnetic properties of the non-magnetic materials. Magnetic properties of the Pd nanoparticles(NPs) embedded in the a-silica matrix synthesized using atom beam sputtering technique, were determined using SQUID magnetometry measurements which showed that ferromagnetic response of Pd increased by 3.5 times on swift heavy ion(SHI) irradiation. The ferromagnetic behavior of the as-deposited Pd NPs is due to strain induced by the surrounding matrix and modification in the electronic structure at the Pd-silica interface as revealed by insitu XRD and XPS investigations, respectively. The defects created by the SHI bombardment are responsible for enhancement of the magnetization in the Pd NPs.

  4. Monte Carlo modeling of ion beam induced secondary electrons

    Energy Technology Data Exchange (ETDEWEB)

    Huh, U., E-mail: uhuh@vols.utk.edu [Biochemistry & Cellular & Molecular Biology, University of Tennessee, Knoxville, TN 37996-0840 (United States); Cho, W. [Electrical and Computer Engineering, University of Tennessee, Knoxville, TN 37996-2100 (United States); Joy, D.C. [Biochemistry & Cellular & Molecular Biology, University of Tennessee, Knoxville, TN 37996-0840 (United States); Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2016-09-15

    Ion induced secondary electrons (iSE) can produce high-resolution images ranging from a few eV to 100 keV over a wide range of materials. The interpretation of such images requires knowledge of the secondary electron yields (iSE δ) for each of the elements and materials present and as a function of the incident beam energy. Experimental data for helium ions are currently limited to 40 elements and six compounds while other ions are not well represented. To overcome this limitation, we propose a simple procedure based on the comprehensive work of Berger et al. Here we show that between the energy range of 10–100 keV the Berger et al. data for elements and compounds can be accurately represented by a single universal curve. The agreement between the limited experimental data that is available and the predictive model is good, and has been found to provide reliable yield data for a wide range of elements and compounds. - Highlights: • The Universal ASTAR Yield Curve was derived from data recently published by NIST. • IONiSE incorporated with the Curve will predict iSE yield for elements and compounds. • This approach can also handle other ion beams by changing basic scattering profile.

  5. Underling modification in ion beam induced Si wafers

    International Nuclear Information System (INIS)

    Hazra, S.; Chini, T.K.; Sanyal, M.K.; Grenzer, J.; Pietsch, U.

    2005-01-01

    Subsurface (amorphous-crystalline interface) structure of keV ion beam modified Si(001) wafers was studied for the first time using non-destructive technique and compared with that of the top one. Ion-beam modifications of the Si samples were done using state-of-art high-current ion implanter facility at Saha Institute of Nuclear Physics by changing energy, dose and angle of incidence of the Ar + ion beam. To bring out the underlying modification depth-resolved x-ray grazing incidence diffraction has been carried out using synchrotron radiation facility, while the structure of the top surface was studied through atomic force microscopy

  6. Ion beam induced defects in solids studied by optical techniques

    International Nuclear Information System (INIS)

    Comins, J.D.; Amolo, G.O.; Derry, T.E.; Connell, S.H.; Erasmus, R.M.; Witcomb, M.J.

    2009-01-01

    Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems. X- and Y-cut LiNbO 3 crystals implanted with 8 MeV Au 3+ ions with a fluence of 1 x 10 17 ions/cm 2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold. Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the I 3 - structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of I 3 - and I 5 - aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed. The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 x 10 17 ions/cm 2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering. Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 x 10 15 to 250 x 10 15 ions/cm -2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show

  7. Ion beam induced defects in solids studied by optical techniques

    Science.gov (United States)

    Comins, J. D.; Amolo, G. O.; Derry, T. E.; Connell, S. H.; Erasmus, R. M.; Witcomb, M. J.

    2009-08-01

    Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems. X- and Y-cut LiNbO 3 crystals implanted with 8 MeV Au 3+ ions with a fluence of 1 × 10 17 ions/cm 2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold. Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the I3- structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of I3- and I5- aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed. The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 10 17 ions/cm 2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering. Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 10 15 to 250 × 10 15 ions/cm -2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show

  8. Advanced ion beam analysis of materials using ion-induced fast electron

    Energy Technology Data Exchange (ETDEWEB)

    Kudo, Hiroshi; Tanabe, Atsushi; Ishihara, Toyoyuki [Tsukuba Univ., Ibaraki (Japan); and others

    1997-03-01

    Recent progress in the study of high-energy shadowing effect using ion-induced electron spectroscopy is reported with emphasis on a possibility of determination of local electronic structure in solids, which has been a difficult problem to approach with other experimental techniques. We demonstrate real-space determination of covalent-bond electron distribution in Si crystal. The analysis technique may provide a new field of ion beam analysis of solids. (author)

  9. Nucleation mechanisms in high energy ion beam induced dewetting

    Energy Technology Data Exchange (ETDEWEB)

    Haag, Michael; Garmatter, Daniel; Ferhati, Redi; Amirthapandian, Sankarakumar; Bolse, Wolfgang [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart (Germany)

    2011-07-01

    Solid coatings, when heated above their melting points, often break up by forming small round holes, which then grow, coalesce and finally turn the initially contiguous film into a pattern of isolated droplets. Such dewetting has been intensively studied using thin polymer films on Si. Three different hole nucleation mechanisms were discovered: homogeneous (spontaneous) nucleation, heterogeneous nucleation at defects, and spinodal dewetting by self-amplifying capillary waves. We have recently found that swift heavy ion (SHI) irradiation of thin oxide films on Si results in similar dewetting patterns, even though the films were kept far below their melting points. Using our new in-situ SEM at the UNILAC accelerator of GSI, we were now able to identify the mechanisms behind this SHI induced dewetting phenomenon. By varying the film thickness and introducing defects at the interface, we can directly address the hole nucleation processes. Besides homogeneous and heterogeneous nucleation, we also found a process, which very much resembles the spinodal mechanism found for liquid polymers, although in the present case the instable wavy surface is not generated by capillary waves, but by ion beam induced stresses.

  10. A critical discussion of the vacancy diffusion model of ion beam induced epitaxial crystallization

    International Nuclear Information System (INIS)

    Heera, V.

    1989-01-01

    A simple vacancy diffusion model of ion beam induced epitaxial crystallization of silicon including divacancy formation is developed. The model reproduces some of the experimental findings, as e.g. the dose rate dependence of the crystallization rate. However, the measured activation energy of the ion beam induced epitaxial crystallization cannot be accounted for by vacancy diffusion alone. (author)

  11. Helium ion beam induced growth of hammerhead AFM probes

    NARCIS (Netherlands)

    Nanda, G.; Veldhoven, E. van; Maas, D.J.; Sadeghian Marnani, H.; Alkemade, P.F.A.

    2015-01-01

    The authors report the direct-write growth of hammerhead atomic force microscope (AFM) probes by He+ beam induced deposition of platinum-carbon. In order to grow a thin nanoneedle on top of a conventional AFM probe, the authors move a focused He+ beam during exposure to a PtC precursor gas. In the

  12. A proposal for study of ion-beam induced chemical reactions using JAERI tandem accelerator

    International Nuclear Information System (INIS)

    1985-11-01

    Problems in ion-beam induced chemical reactions using JAERI Tandem Accelerator were discussed. Research philosophy, some proposed experiments which are based on measurements during ion-beam bombardment, and main features of the experimental apparatus are briefly described in this report. (author)

  13. Ion beam induced nanosized Ag metal clusters in glass

    International Nuclear Information System (INIS)

    Mahnke, H.-E.; Schattat, B.; Schubert-Bischoff, P.; Novakovic, N.

    2006-01-01

    Silver metal clusters have been formed in soda lime glass by high-energy heavy-ion irradiation at ISL. The metal cluster formation was detected with X-ray absorption spectroscopy (EXAFS) in fluorescence mode, and the shape of the clusters was imaged with transmission electron microscopy. While annealing in reducing atmosphere alone, leads to the formation of metal clusters in Ag-containing glasses, where the Ag was introduced by ion-exchange, such clusters are not very uniform in size and are randomly distributed over the Ag-containing glass volume. Irradiation with 600-MeV Au ions followed by annealing, however, results in clusters more uniform in size and arranged in chains parallel to the direction of the ion beam

  14. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  15. Ion beam induced optical and surface modification in plasmonic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Udai B., E-mail: udaibhansingh123@gmail.com; Gautam, Subodh K.; Kumar, Sunil; Hooda, Sonu; Ojha, Sunil; Singh, Fouran

    2016-07-15

    In present work, ion irradiation induced nanostructuring has been exploited as an efficient and effective tool for synthesis of coupled plasmonics nanostructures by using 1.2 MeV Xe ions on Au/ZnO/Au system deposited on glass substrate. The results are correlated on the basis of their optical absorption, surface morphologies and enhanced sensitivity of evolved phonon modes by using UV Visible spectroscopy, scanning electron microscopy (SEM), and Raman spectroscopy (RS), respectively. Optical absorbance spectra of plasmonic nanostructures (NSs) show a decrease in band gap, which may be ascribed to the formation of defects with ion irradiation. The surface morphology reveals the formation of percolated NSs upon ion irradiation and Rutherford backscattering spectrometry (RBS) study clearly shows the formation of multilayer system. Furthermore, RS measurements on samples are studied to understand the enhanced sensitivity of ion irradiation induced phonon mode at 573 cm{sup −1} along with other modes. As compared to pristine sample, a stronger and pronounced evolution of these phonon modes is observed with further ion irradiation, which indicates localized surface plasmon results with enhanced intensity of phonon modes of Zinc oxide (ZnO) material. Thus, such plasmonic NSs can be used as surface enhanced Raman scattering (SERS) substrates.

  16. Chemically Induced Phase Transformation in Austenite by Focused Ion Beam

    Science.gov (United States)

    Basa, Adina; Thaulow, Christian; Barnoush, Afrooz

    2014-03-01

    A highly stable austenite phase in a super duplex stainless steel was subjected to a combination of different gallium ion doses at different acceleration voltages. It was shown that contrary to what is expected, an austenite to ferrite phase transformation occurred within the focused ion beam (FIB) milled regions. Chemical analysis of the FIB milled region proved that the gallium implantation preceded the FIB milling. High resolution electron backscatter diffraction analysis also showed that the phase transformation was not followed by the typical shear and plastic deformation expected from the martensitic transformation. On the basis of these observations, it was concluded that the change in the chemical composition of the austenite and the local increase in gallium, which is a ferrite stabilizer, results in the local selective transformation of austenite to ferrite.

  17. The status and new trends of ion beam induced charge technique

    International Nuclear Information System (INIS)

    Lu Rongrong; Qiu Huiyuan; Zhu Dezhang

    2002-01-01

    Ion beam induced charge technique (IBIC) with low beam current (fA level) and high efficiency is a new development of nuclear microscopy. It has been widely applied to the fields of semiconductor and microelectronic materials. The principle and the experimental method of the IBIC technique were described and reviewed its status and new trends were reviewed

  18. The influence of beam divergence on ion-beam induced surface patterns

    International Nuclear Information System (INIS)

    Kree, R.; Yasseri, T.; Hartmann, A.K.

    2009-01-01

    We present a continuum theory and a Monte Carlo model of self-organized surface pattern formation by ion-beam sputtering including effects of beam profiles. Recently, it has turned out that such secondary ion-beam parameters may have a strong influence on the types of emerging patterns. We first discuss several cases, for which beam profiles lead to random parameters in the theory of pattern formation. Subsequently we study the evolution of the averaged height profile in continuum theory and find that the typical Bradley-Harper scenario of dependence of ripple patterns on the angle of incidence can be changed qualitatively. Beam profiles are implemented in Monte Carlo simulations, where we find generic effects on pattern formation. Finally, we demonstrate that realistic beam profiles, taken from experiments, may lead to qualitative changes of surface patterns.

  19. Development of a new light collection and detection system optimized for ion beam induced fluorescence microscopy

    International Nuclear Information System (INIS)

    Vanga, Sudheer Kumar; Mi, Zhaohong; Koh, Long Cheng; Tao, Ye; Bettiol, Andrew A.; Watt, Frank

    2015-01-01

    Ion beam induced fluorescence microscopy is a new imaging technique which has the potential to achieve sub-50 nm spatial resolution fluorescence images. Currently the resolution of the technique has been limited to around 150 nm mainly because of inefficient collection and detection of emitted photons from the sample. To overcome this limitation, a new light collection system based on a custom made parabolic mirror is employed to enhance the fluorescence collection. The custom made mirror is designed so as to obtain both structural (scanning transmission ion microscopy) and ion beam induced fluorescence imaging simultaneously. The design and characterization of the parabolic mirror is discussed in detail

  20. Modeling of Low Frequency MHD Induced Beam Ion Transport In NSTX

    International Nuclear Information System (INIS)

    Gorelenkov, N.N.; Medley, S.S.

    2004-01-01

    Beam ion transport in the presence of low frequency MHD activity in National Spherical Tokamak Experiment (NSTX) plasma is modeled numerically and analyzed theoretically in order to understand basic underlying physical mechanisms responsible for the observed fast ion redistribution and losses. Numerical modeling of the beam ions flux into the NPA in NSTX shows that after the onset of low frequency MHD activity high energy part of beam ion distribution, E b > 40keV, is redistributed radially due to stochastic diffusion. Such diffusion is caused by high order harmonics of the transit frequency resonance overlap in the phase space. Large drift orbit radial width induces such high order resonances. Characteristic confinement time is deduced from the measured NPA energy spectrum and is typically ∼ 4msec. Considered MHD activity may induce losses on the order of 10% at the internal magnetic field perturbation (delta)B/B = Ο (10 -3 ), which is comparable to the prompt orbit losses

  1. Electron backscatter diffraction studies of focused ion beam induced phase transformation in cobalt

    Energy Technology Data Exchange (ETDEWEB)

    Jones, H.G., E-mail: helen.jones@npl.co.uk [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Day, A.P. [Aunt Daisy Scientific Ltd, Claremont House, High St, Lydney GL15 5DX (United Kingdom); Cox, D.C. [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2016-10-15

    A focused ion beam microscope was used to induce cubic to hexagonal phase transformation in a cobalt alloy, of similar composition to that of the binder phase in a hardmetal, in a controlled manner at 0°, 45° and 80° ion incident angles. The cobalt had an average grain size of ~ 20 μm, allowing multiple orientations to be studied, exposed to a range of doses between 6 × 10{sup 7} and 2 × 10{sup 10} ions/μm{sup 2}. Electron backscatter diffraction (EBSD) was used to determine the original and induced phase orientations, and area fractions, before and after the ion beam exposure. On average, less phase transformation was observed at higher incident angles and after lower ion doses. However there was an orientation effect where grains with an orientation close to (111) planes were most susceptible to phase transformation, and (101) the least, where grains partially and fully transformed at varying ion doses. - Highlights: •Ion-induced phase change in FCC cobalt was observed at multiple incidence angles. •EBSD was used to study the relationship between grain orientation and transformation. •Custom software analysed ion dose and phase change with respect to grain orientation. •A predictive capability of ion-induced phase change in cobalt was enabled.

  2. An effective method for detection and analysis of DNA damage induced by heavy-ion beams

    International Nuclear Information System (INIS)

    Kazama, Y.; Saito, H.; Fujiwara, M.; Matsuyama, T.; Hayashi, Y.; Ryuto, H.; Fukunishi, N.; Abe, T.

    2007-01-01

    We have developed an efficient system to detect and analyze DNA mutations induced by heavy-ion beams in Arabidopsis thaliana. In this system, a stable transgenic Arabidopsis line that constitutively expresses a yellow fluorescent protein (YFP) by a single-copy gene at a genomic locus was constructed and irradiated with heavy-ion beams. The YFP gene is a target of mutagenesis, and its loss of function or expression can easily be detected by the disappearance of YFP signals in planta under microscopy. With this system, a sup(12)Csup(6+)- induced mutant with single deletion and multiple base changes was isolated

  3. Ion-beam-induced reactions in metal-thin-film-/BP system

    International Nuclear Information System (INIS)

    Kobayashi, N.; Kumashiro, Y.; Revesz, P.; Mayer, J.W.

    1989-01-01

    Ion-beam-induced reactions in Ni thin films on BP(100) have been investigated and compared with the results of the thermal reaction. The full reaction of Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 200degC and the formation of the crystalline phase corresponding to a composition of Ni 4 BP was observed. Amorphous layer with the same composition was formed by the bombardments below RT. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350degC and 400degC and full reaction was observed at 450degC. Metal-rich ternary phase or mixed binary phase is thought to be the first crystalline phase formed both in the ion-beam-induced and in the thermally induced reactions. The crystalline phase has the same composition and X-ray diffraction pattern both for ion-beam-induced and thermal reactions. Linear dependence of the reacted thickness on the ion fluence was also observed. The authors would like to express their sincere gratitude to Jian Li and Shi-Qing Wang for X-ray diffraction measurements at Cornell University. One of the authors (N.K.) acknowledge the Agency of Science and Technology of Japan for the financial support of his stay at Cornell. We also acknowledge Dr. H. Tanoue at ETL for his help in ion bombardment experiments. (author)

  4. Simulation of ion-beam induced defects in cuprate superconductors

    International Nuclear Information System (INIS)

    Dineva, M.; Marksteiner, M.; Lang, W.

    2005-01-01

    Full text: Heavy-ion irradiation of cuprate superconductors is well known to produce columnar defect tracks along which magnetic vortices can be pinned. Hence, this effect has a large potential for practical applications and can enhance the critical current of the high-temperature superconducting materials. On the other hand, little work has been devoted to light-ion irradiation of the new superconductors. Our previous experimental results have indicated a systematic change of electric transport properties when irradiating YBa 2 Cu 3 O 7 (YBCO) with 75 KEXV He + ions. The purpose of the present study is the investigation of the ion-target interactions with computer simulation programs based on the binary collision approximation. The program package SRIM (Stopping and Range of Ions in Matter) is widely used to simulate the impact of energetic ions (10 eV to 2 GeV) on a solid target using a quantum mechanical treatment of ion-atom collisions under the assumption of an unstructured target material. A similar program, MARLOWE, includes the exact crystalline structure of the target and, thus, is able to calculate ion channeling effects and angle dependences. Detailed results of the penetration range of ions into YBCO, scattering cascades, creation of vacancies and interstitials, are reported for various kinds of ions. One of the central results is that light ions with energy of about 80 KEXV can penetrate through thin films of the cuprate superconductors and create point defects, mainly by oxygen displacement. (author)

  5. Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

    International Nuclear Information System (INIS)

    Schoene, H.; Walsh, D.S.; Sexton, F.W.; Doyle, B.L.; Aurand, J.F.; Dodd, P.E.; Flores, R.S.; Wing, N.

    1998-01-01

    The entire current transient induced by single 12 MeV Carbon ions was measured at a 5GHz analog bandwidth. A focused ion micro-beam was used to acquire multiple single ion transients at multiple locations of a single CMOS transistor. The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations. Estimates are presented for the drift assisted funneling charge collection depth

  6. Ion beam induced surface graphitization of CVD diamond for x-ray beam position monitor applications

    International Nuclear Information System (INIS)

    Liu, Chian; Shu, D.; Kuzay, T.M.; Wen, L.; Melendres, C.A.; Argonne National Lab., IL

    1996-01-01

    The Advanced Photon Source at ANL is a third-generation synchrotron facility that generates powerful x-ray beams on its undulator beamlines. It is important to know the position and angle of the x- ray beam during experiments. Due to very high heat flux levels, several patented x-ray beam position monitors (XBPM) exploiting chemical vapor deposition (CVD) diamond have been developed. These XBPMs have a thin layer of low-atomic-mass metallic coating so that photoemission from the x rays generate a minute but measurable current for position determination. Graphitization of the CVD diamond surface creates a very thin, intrinsic and conducting layer that can stand much higher temperatures and minimal x-ray transmission losses compared to the coated metallic layers. In this paper, a laboratory sputter ion source was used to transform selected surfaces of a CVD diamond substrate into graphite. The effect of 1-5 keV argon ion bombardment on CVD diamond surfaces at various target temperatures from 200 to 500 C was studied using Auger electron spectroscopy and in-situ electrical resistivity measurements. Graphitization after the ion bombardment has been confirmed and optimum conditions for graphitization studied. Raman spectroscopy was used to identify the overall diamond structure in the bulk of CVD diamond substrate after the ion bombardments. It was found that target temperature plays an important role in stability and electrical conductivity of the irradiated CVD diamonds

  7. Proteome Changes in Maize Embryo (Zea mays L) Induced by Ion Beam Implantation Treatment

    International Nuclear Information System (INIS)

    Li Yongliang; Qin Guangyong; Huo Yuping; Tian Shuangqi; Tang Jihua

    2009-01-01

    Low energy ion beam implantation was applied to the maize (Zea mays L) embryo proteome using two-dimensional gel electrophoresis. Protein profile analysis detected more than 1100 protein spots, 72 of which were determined to be expressed differently in the treated and control (not exposed to ion beam implantation) embryos. Of the 72 protein spots, 53 were up-regulated in the control and 19 were more abundantly expressed in the ion beam-treated embryos. The spots of up- or down-regulated proteins were identified by matrix assisted laser desorption/ionization-time of flight mass spectrometry (MALDI-TOF-MS). Among the identified proteins, 11 were up-regulated in the treated embryos. Four of these up-regulated proteins were antioxidant molecules, three were related to stress response, two to sugar metabolism and two were associated with heat shock response. Of the five proteins up-regulated in the control embryos, three were functionally related to carbohydrate metabolism; the functions of the remaining two proteins were unknown. The data collected during this study indicate that treatment of maize embryos with low energy ion beam implantation induces changes in stress tolerance enzymes/proteins, possibly as a result of alterations in metabolism. (ion beam bioengineering)

  8. Ion beam induced charge and cathodoluminescence imaging of response uniformity of CVD diamond radiation detectors

    CERN Document Server

    Sellin, P J; Galbiati, A; Maghrabi, M; Townsend, P D

    2002-01-01

    The uniformity of response of CVD diamond radiation detectors produced from high quality diamond film, with crystallite dimensions of >100 mu m, has been studied using ion beam induced charge imaging. A micron-resolution scanning alpha particle beam was used to produce maps of pulse height response across the device. The detectors were fabricated with a single-sided coplanar electrode geometry to maximise their sensitivity to the surface region of the diamond film where the diamond crystallites are highly ordered. High resolution ion beam induced charge images of single crystallites were acquired that demonstrate variations in intra-crystallite charge transport and the termination of charge transport at the crystallite boundaries. Cathodoluminescence imaging of the same crystallites shows an inverse correlation between the density of radiative centres and regions of good charge transport.

  9. Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching

    International Nuclear Information System (INIS)

    Singh, R.; Fonash, S.J.; Ashok, S.; Caplan, P.; Shappirio, J.; Hage-Ali, M.; Ponpon, J.

    1983-01-01

    A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures

  10. Ion-beam induced chemical and structural modification in polymers

    Czech Academy of Sciences Publication Activity Database

    Guenther, M.; Gerlach, G.; Suchaneck, G.; Sahre, K.; Eichorn, K. J.; Wolf, B.; Deineka, Alexander; Jastrabík, Lubomír

    158-159, - (2002), s. 108-113 ISSN 0257-8972 Grant - others:Ge(DE) 779/6-1 Institutional research plan: CEZ:AV0Z1010914 Keywords : polyimide * polyethersulfone- hardness * conductivity * polymer structure * ion implantation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.267, year: 2002

  11. High energy Xe{sup +} ion beam induced ripple structures on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

    2008-07-01

    Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

  12. Ion beam induced luminescence of germano-silicate optical fiber preform

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Hyunkyu; Kim, Jongyeol; Lee, Namho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Kim, Youngwoong; Han, Wontaek [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Markovic, Nikola; Jaksic, Milko [Ruder Boskovic Institute, Zagred (Croatia)

    2014-05-15

    When an optical fiber is exposed to radiation, the attenuation (RIA, Radiation Induced Attenuation) in the optical fiber (OF) is increased because of the color centers which deteriorate the transmission property and generate the absorption loss. In order to understand the radiation induced defect, Ion Beam induced luminescence (IBIL) was introduced to investigate it. IBIL technique is to analyze IR/VIS/UV luminescence related to ion beam interaction with outer shell electrons involved in chemical bonds and structure defects of target atoms. So IBIL is sensitive to its chemical composition and has been used in analysis of material characterization, geological samples and cultural heritage objects. In silica material, four O atoms are surrounding one Si atom in tetrahedral coordination. In this study, the influence of Copper (Cu) and Cerium (Ce) dopants to germano silica core optical fibers were investigated under proton irradiation at RBI using Ion Beam induced luminescence (IBIL) method. To understand the radiation induced defect of optical fibers, IBIL were tested to a germano-silica core fiber under 2 MeV proton irradiation. Although a Cu or Ce dopant was not detected by IBIL technique, the relation between the amount of radiation and luminescence can be established. This experiment showed a potential technique of studying the effects and behavior of additive elements for silica core fiber. To increase the radiation resistance of optical fibers, further investigations are needed, i. e. the proper additives and its contents and an interaction mechanism between Ge-related defects and additives.

  13. Ion beam induced luminescence of germano-silicate optical fiber preform

    International Nuclear Information System (INIS)

    Jung, Hyunkyu; Kim, Jongyeol; Lee, Namho; Kim, Youngwoong; Han, Wontaek; Markovic, Nikola; Jaksic, Milko

    2014-01-01

    When an optical fiber is exposed to radiation, the attenuation (RIA, Radiation Induced Attenuation) in the optical fiber (OF) is increased because of the color centers which deteriorate the transmission property and generate the absorption loss. In order to understand the radiation induced defect, Ion Beam induced luminescence (IBIL) was introduced to investigate it. IBIL technique is to analyze IR/VIS/UV luminescence related to ion beam interaction with outer shell electrons involved in chemical bonds and structure defects of target atoms. So IBIL is sensitive to its chemical composition and has been used in analysis of material characterization, geological samples and cultural heritage objects. In silica material, four O atoms are surrounding one Si atom in tetrahedral coordination. In this study, the influence of Copper (Cu) and Cerium (Ce) dopants to germano silica core optical fibers were investigated under proton irradiation at RBI using Ion Beam induced luminescence (IBIL) method. To understand the radiation induced defect of optical fibers, IBIL were tested to a germano-silica core fiber under 2 MeV proton irradiation. Although a Cu or Ce dopant was not detected by IBIL technique, the relation between the amount of radiation and luminescence can be established. This experiment showed a potential technique of studying the effects and behavior of additive elements for silica core fiber. To increase the radiation resistance of optical fibers, further investigations are needed, i. e. the proper additives and its contents and an interaction mechanism between Ge-related defects and additives

  14. Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au

    International Nuclear Information System (INIS)

    Chee, See Wee; Kammler, Martin; Balasubramanian, Prabhu; Reuter, Mark C.; Hull, Robert; Ross, Frances M.

    2013-01-01

    We use focused beams of Ga + , Au + and Si ++ ions to induce local microstructural changes in single crystal silicon. The ions were delivered as single spot pulses into thin Si membranes that could subsequently be imaged and annealed in situ in a transmission electron microscope. For each ion, the focused ion beam implantation created an array of amorphous regions in the crystalline membrane. Annealing causes solid phase epitaxial regrowth to take place, but we show that the resulting microstructure depends on the ion species. For Ga + and Au + , precipitates remain after recrystallization, while for Si ++ , dislocation loops form around the periphery of each implanted spot. We attribute these loops to defects formed during solid phase epitaxial regrowth, with controlled placement of the loops possible. - Highlights: ► Ga + , Au + and Si ++ were implanted into thin membranes of Si. ► Samples were imaged and annealed in situ in a transmission electron microscope. ► Focused ion beam implantation created an array of amorphous spots. ► After recrystallization, precipitates form for Ga + and Au + , dislocation loops for Si ++ . ► Controlled placement of the dislocation loops possible

  15. TEM study of the ion beam induced damage during 14 kev P+ implantation in silicon

    International Nuclear Information System (INIS)

    Rubanov, S.; Tamanyan, G.; Hudson, F.; Jamieson, D.N.; McCallum, J.C.; Prawer, S.

    2005-01-01

    The proposed silicon-based quantum computer architecture comprises an array of phosphorus donor atoms (qubits) positioned with nanometre accuracy beneath the surface of a semiconductor host, using a single ion implantation technique. The average depth of the implanted ions (the projected range R p ), lateral range R p 1, and the distribution of ions about that depth can be approximated as two-dimensional Gaussian with standard deviation ΔR p and ΔR p 1 (lateral straggle). Using transmission electron microscopy (TEM) we studied ion beam induced damage after 14 keV P + implantation in Si. The TEM images allowed us to compare the depth of the amorphous cluster formation to R p , R p 1, ΔR p 1 calculated from SRIM and hence determine evidence for the limitation on the accuracy of the position of the implanted ions imposed by straggling. (author). 4 refs., 3 figs

  16. Cell killing and chromosomal aberration induced by heavy-ion beams in cultured human tumor cells

    International Nuclear Information System (INIS)

    Takakura, K.; Funada, A.; Mohri, M.; Lee, R.; Aoki, M.; Furusawa, Y.; Gotoh, E.

    2003-01-01

    Full text: To clarify the relation between cell death and chromosomal aberration in cultured human tumor cells irradaited with heavy-ion beams. The analyses were carried out on the basis of the linear energy transfer (LET) values of heavy ion beams as radiation source. Exponentially growing human tumor cells, Human Salivary Gland Tumor cells (HSG cells), were irradiated with various high energy heavy ions, such as 13 keV/micrometer carbon (C) ions as low LET charged particle radiation source, 120 keV/ micrometer carbon (C) ions and 440 keV/micrometer iron (Fe) ions as high LET charged particle radiation sources.The cell death was analysed by the colony formation method, and the chromosomal aberration and its repairing kinetics was analysed by prematurely chromosome condensation method (PCC method) using calyculin A. Chromatid-type breaks, isochromatid breaks and exchanges were scored for the samples from the cells keeping with various incubation time after irradiation. The LET dependence of the cell death was similar to that of the chromosome exchange formation after 12 hours incubation. A maximum peak was around 120 keV/micrometer. However it was not similar to the LET dependence of isochromatid breaks or chromatid breaks after 12 hours incubation. These results suggest that the exchanges formed in chromosome after irradiation should be one of essential causes to lead the cell death. The different quality of induced chromosome damage between high-LET and low-LET radiation was also shown. About 89 % and 88 % chromatid breaks induced by X rays and 13 keV/micrometer C ions were rejoined within 12 hours of post-irradiation, though only 71% and 58 % of chromatid breaks induced by 120 keV/micrometer C ions and 440 keV/micrometer Fe ions were rejoined within 12 hours of post-irradiation

  17. Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

    International Nuclear Information System (INIS)

    Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.

    2007-01-01

    Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density

  18. Analysis of art objects by means of ion beam induced luminescence

    International Nuclear Information System (INIS)

    Quaranta, A; Dran, J C; Salomon, J; Pivin, J C; Vomiero, A; Tonezzer, M; Maggioni, G; Carturan, S; Mea, G Della

    2006-01-01

    The impact of energetic ions on solid samples gives rise to the emission of visible light owing to the electronic excitation of intrinsic defects or extrinsic impurities. The intensity and position of the emission features provide information on the nature of the luminescence centers and on their chemical environments. This makes ion beam induced luminescence (IBIL) a useful complement to other ion beam analyses, like PIXE, in the cultural heritage field in characterizing the composition and the provenience of art objects. In the present paper, IBIL measurements have been performed on inorganic pigments for underlying the complementary role played by IBIL in the analysis of artistic works. Some blue and red pigment has been presented as case study

  19. DNA damage and chromosome aberration induced by heavy-ion beams

    International Nuclear Information System (INIS)

    Takakura, Kahoru; Funada, Aya; Aoki, Mizuho; Furusawa, Yoshiya

    2003-01-01

    The aim of this study is to clarify the relation between cell death and chromosomal aberration in cultured human cells (human salivary gland (HSG) tumor cells and GM05389 human normal fibroblasts) irradiated with heavy ion beams on the basis of linear energy transfer (LET) values. The LET dependences of cell death were observed for the both cells by the method of colony assay. The LET dependences of the chromosomal aberrations, breaks and gaps, isochromatid breaks and exchanges were also observed for the both cells using the premature chromosome condensation (PCC) method. From these results it is suggested that exchange formation is essential for the cell death caused by heavy ion beam irradiation. It is suspected that the densely ionizing track structure of hight LET heavy ions inhibits the effective repair in the chromatid breaks and isochromatid breaks and finally induce much exchange in the cells, which should be essential cause of cell death. (author)

  20. Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, Tobias

    2012-05-03

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

  1. Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

    Energy Technology Data Exchange (ETDEWEB)

    Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wongkham, W. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Inthanon, K. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Anuntalabhochai, S. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2013-06-15

    Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

  2. Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

    International Nuclear Information System (INIS)

    Yu, L.D.; Wongkham, W.; Prakrajang, K.; Sangwijit, K.; Inthanon, K.; Thongkumkoon, P.; Wanichapichart, P.; Anuntalabhochai, S.

    2013-01-01

    Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

  3. Proteome Changes in Maize Embryo (Zea mays L) Induced by Ion Beam Implantation Treatment

    Science.gov (United States)

    Li, Yongliang; Tang, Jihua; Qin, Guangyong; Huo, Yuping; Tian, Shuangqi

    2009-08-01

    Low energy ion beam implantation was applied to the maize (Zea mays L) embryo proteome using two-dimensional gel electrophoresis. Protein profile analysis detected more than 1100 protein spots, 72 of which were determined to be expressed differently in the treated and control (not exposed to ion beam implantation) embryos. Of the 72 protein spots, 53 were up-regulated in the control and 19 were more abundantly expressed in the ion beam-treated embryos. The spots of up- or down-regulated proteins were identified by matrix assisted laser desorption/ionization-time of flight mass spectrometry (MALDI-TOF-MS). Among the identified proteins, 11 were up-regulated in the treated embryos. Four of these up-regulated proteins were antioxidant molecules, three were related to stress response, two to sugar metabolism and two were associated with heat shock response. Of the five proteins up-regulated in the control embryos, three were functionally related to carbohydrate metabolism; the functions of the remaining two proteins were unknown. The data collected during this study indicate that treatment of maize embryos with low energy ion beam implantation induces changes in stress tolerance enzymes/proteins, possibly as a result of alterations in metabolism.

  4. Intense heavy ion beam-induced effects in carbon-based stripper foils

    Energy Technology Data Exchange (ETDEWEB)

    Kupka, Katharina

    2016-08-15

    Amorphous carbon or carbon-based stripper foils are commonly applied in accelerator technology for electron stripping of ions. At the planned facility for antiproton and ion research (FAIR) at the Helmholtzzentrum fuer Schwerionenforschung (GSI), Darmstadt, thin carbon stripper foils provide an option for directly delivering ions of intermediate charge states to the heavy ion synchrotron, SIS 18, in order to mitigate space charge limitations during high-intensity operation. In case of desired high end-energies in the synchrotron, a second stripping process by a thicker carbon foil provides ions of higher charge states for injection into the SIS18. High beam intensities and a pulsed beam structure as foreseen at FAIR pose new challenges to the stripper foils which experience enhanced degradation by radiation damage, thermal effects, and stress waves. In order to ensure reliable accelerator operation, radiation-hard stripper foils are required. This thesis aims to a better understanding of processes leading to degradation of carbon-based thin foils. Special focus is placed on ion-beam induced structure and physical property changes and on the influence of different beam parameters. Irradiation experiments were performed at the M3-beamline of the universal linear accelerator (UNILAC) at GSI, using swift heavy ion beams with different pulse lengths and repetition rates. Tested carbon foils were standard amorphous carbon stripper foils produced by the GSI target laboratory, as well as commercial amorphous and diamond-like carbon foils and buckypaper foils. Microstructural changes were investigated with various methods such as optical microscopy, scanning electron microscopy (SEM), profilometry and chromatic aberration measurements. For the investigation of structural changes X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), in-situ Fourier-transform infrared spectroscopy (FTIR) and small angle X

  5. Intense heavy ion beam-induced effects in carbon-based stripper foils

    International Nuclear Information System (INIS)

    Kupka, Katharina

    2016-08-01

    Amorphous carbon or carbon-based stripper foils are commonly applied in accelerator technology for electron stripping of ions. At the planned facility for antiproton and ion research (FAIR) at the Helmholtzzentrum fuer Schwerionenforschung (GSI), Darmstadt, thin carbon stripper foils provide an option for directly delivering ions of intermediate charge states to the heavy ion synchrotron, SIS 18, in order to mitigate space charge limitations during high-intensity operation. In case of desired high end-energies in the synchrotron, a second stripping process by a thicker carbon foil provides ions of higher charge states for injection into the SIS18. High beam intensities and a pulsed beam structure as foreseen at FAIR pose new challenges to the stripper foils which experience enhanced degradation by radiation damage, thermal effects, and stress waves. In order to ensure reliable accelerator operation, radiation-hard stripper foils are required. This thesis aims to a better understanding of processes leading to degradation of carbon-based thin foils. Special focus is placed on ion-beam induced structure and physical property changes and on the influence of different beam parameters. Irradiation experiments were performed at the M3-beamline of the universal linear accelerator (UNILAC) at GSI, using swift heavy ion beams with different pulse lengths and repetition rates. Tested carbon foils were standard amorphous carbon stripper foils produced by the GSI target laboratory, as well as commercial amorphous and diamond-like carbon foils and buckypaper foils. Microstructural changes were investigated with various methods such as optical microscopy, scanning electron microscopy (SEM), profilometry and chromatic aberration measurements. For the investigation of structural changes X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), in-situ Fourier-transform infrared spectroscopy (FTIR) and small angle X

  6. Ion beam monitoring

    International Nuclear Information System (INIS)

    McKinney, C.R.

    1980-01-01

    An ion beam analyzer is specified, having an ion source for generating ions of a sample to be analyzed, means for extracting the sample ions, means for focusing the sample ions into a beam, separation means positioned along the ion beam for selectively deflecting species of ions, and means for detecting the selected species of ions. According to the specification, the analyzer further comprises (a) means for disabling at least a portion of the separation means, such that the ion beam from the source remains undeflected; (b) means located along the path of the undeflected ion beam for sensing the sample ions; and (c) enabling means responsive to the sensing means for automatically re-enabling the separation means when the sample ions reach a predetermined intensity level. (author)

  7. Effects on cuytoskeleton system in pollen tube of pinus thunbergii induced by ion beam implantation

    International Nuclear Information System (INIS)

    Huang Qunce; Liang Qiuxia; Li Guopin

    2008-01-01

    The damage of the cytoskeleton system in the pollen and the pollen tube of Pinus thunbergii induced by ion beam implantation were researched. The results showed that the disorganization of the micro-tubules in the pollen tube was produced by N + implantation. The abnormal states of the pollen tube in morphology were very correlative with the abnormality of the cytoskeleton system. N + implantation was responsible for morphological abnormalities in the pollen tubes. There was a distinct correlation between the damage effects and the ion implantation dose. The add of dose caused more obvious damage effects. Furthermore, the state of the cytoskeleton system in the pollen tube was influenced by the ion implantation. The impact grade depended also on the ion implantation dose. (authors)

  8. Cooling of molecular ion beams

    International Nuclear Information System (INIS)

    Wolf, A.; Krohn, S.; Kreckel, H.; Lammich, L.; Lange, M.; Strasser, D.; Grieser, M.; Schwalm, D.; Zajfman, D.

    2004-01-01

    An overview of the use of stored ion beams and phase space cooling (electron cooling) is given for the field of molecular physics. Emphasis is given to interactions between molecular ions and electrons studied in the electron cooler: dissociative recombination and, for internally excited molecular ions, electron-induced ro-vibrational cooling. Diagnostic methods for the transverse ion beam properties and for the internal excitation of the molecular ions are discussed, and results for phase space cooling and internal (vibrational) cooling are presented for hydrogen molecular ions

  9. Ion Beam Propulsion Study

    Science.gov (United States)

    2008-01-01

    The Ion Beam Propulsion Study was a joint high-level study between the Applied Physics Laboratory operated by NASA and ASRC Aerospace at Kennedy Space Center, Florida, and Berkeley Scientific, Berkeley, California. The results were promising and suggested that work should continue if future funding becomes available. The application of ion thrusters for spacecraft propulsion is limited to quite modest ion sources with similarly modest ion beam parameters because of the mass penalty associated with the ion source and its power supply system. Also, the ion source technology has not been able to provide very high-power ion beams. Small ion beam propulsion systems were used with considerable success. Ion propulsion systems brought into practice use an onboard ion source to form an energetic ion beam, typically Xe+ ions, as the propellant. Such systems were used for steering and correction of telecommunication satellites and as the main thruster for the Deep Space 1 demonstration mission. In recent years, "giant" ion sources were developed for the controlled-fusion research effort worldwide, with beam parameters many orders of magnitude greater than the tiny ones of conventional space thruster application. The advent of such huge ion beam sources and the need for advanced propulsion systems for exploration of the solar system suggest a fresh look at ion beam propulsion, now with the giant fusion sources in mind.

  10. Compensation of head-on beam-beam induced resonance driving terms and tune spread in the Relativistic Heavy Ion Collider

    Directory of Open Access Journals (Sweden)

    W. Fischer

    2017-09-01

    Full Text Available A head-on beam-beam compensation scheme was implemented for operation in the Relativistic Heavy Ion Collider (RHIC at Brookhaven National Laboratory [Phys. Rev. Lett. 115, 264801 (2015PRLTAO0031-900710.1103/PhysRevLett.115.264801]. The compensation consists of electron lenses for the reduction of the beam-beam induced tune spread, and a lattice for the minimization of beam-beam generated resonance driving terms. We describe the implementations of the lattice and electron lenses, and report on measurements of lattice properties and the effect of the electron lenses on the hadron beam.

  11. Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

    Science.gov (United States)

    Lee, Jung-Kun; Nastasi, Michael

    2012-11-01

    The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.

  12. Xe ion beam induced rippled structures on differently oriented single-crystalline Si surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan [Forschungszentrum Dresden-Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, PO Box 510119, 01314 Dresden (Germany); Biermanns, Andreas; Pietsch, Ullrich, E-mail: A.Hanisch@fzd.d [Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany)

    2010-03-24

    We report on Xe{sup +} induced ripple formation at medium energy on single-crystalline silicon surfaces of different orientations using substrates with an intentional miscut from the [0 0 1] direction and a [1 1 1] oriented wafer. The ion beam incidence angle with respect to the surface normal was kept fixed at 65{sup 0} and the ion beam projection was parallel or perpendicular to the [1 1 0] direction. By a combination of atomic force microscopy, x-ray diffraction and high-resolution transmission electron microscopy we found that the features of the surface and subsurface rippled structures such as ripple wavelength and amplitude and the degree of order do not depend on the surface orientation as assumed in recent models of pattern formation for semiconductor surfaces. (fast track communication)

  13. Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

    Energy Technology Data Exchange (ETDEWEB)

    Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Thopan, P.; Yaopromsiri, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation.

  14. Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

    International Nuclear Information System (INIS)

    Thongkumkoon, P.; Prakrajang, K.; Thopan, P.; Yaopromsiri, C.; Suwannakachorn, D.; Yu, L.D.

    2013-01-01

    Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation

  15. Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Z., E-mail: pscientific5@aec.org.sy [Scientific Service Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Ahmad, M. [IBA Laboratory, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Chemistry Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic)

    2017-04-01

    Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

  16. Ion beam diagnosis

    International Nuclear Information System (INIS)

    Strehl, P.

    1994-04-01

    This report is an introduction to ion beam diagnosis. After a short description of the most important ion beam parameters measurements of the beam current by means of Faraday cups, calorimetry, and beam current transformers and measurements of the beam profile by means of viewing screens, profile grids and scanning devices, and residual gas ionization monitors are described. Finally measurements in the transverse and longitudinal phase space are considered. (HSI)

  17. Electron Beam Ion Sources

    CERN Document Server

    Zschornacka, G.; Thorn, A.

    2013-12-16

    Electron beam ion sources (EBISs) are ion sources that work based on the principle of electron impact ionization, allowing the production of very highly charged ions. The ions produced can be extracted as a DC ion beam as well as ion pulses of different time structures. In comparison to most of the other known ion sources, EBISs feature ion beams with very good beam emittances and a low energy spread. Furthermore, EBISs are excellent sources of photons (X-rays, ultraviolet, extreme ultraviolet, visible light) from highly charged ions. This chapter gives an overview of EBIS physics, the principle of operation, and the known technical solutions. Using examples, the performance of EBISs as well as their applications in various fields of basic research, technology and medicine are discussed.

  18. Nanostructures by ion beams

    Science.gov (United States)

    Schmidt, B.

    Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

  19. Ion desorption induced by charged particle beams: mechanisms and mass spectroscopy

    International Nuclear Information System (INIS)

    Silveira, E.F. da; Schweikert, E.A.

    1988-01-01

    Surface analysis, through desorption, induced by fast particles, is presented and discussed. The stopping of projectils is essentially made by collisions with the target electrons. The desorbed particles are generally emmited with kinetic energy from 0.1 to 20 eV. Mass, charge, velocity and emission angle give information about the surface components, its structure as well as beam-solid interaction processes. Time-of-flight mass spectroscopy of desorbed ions, determine the mass of organic macromolecules and biomolecules. (A.C.A.S.) [pt

  20. Impurity mapping in sulphide minerals using Time-resolved Ion Beam Induced Current imaging

    International Nuclear Information System (INIS)

    Laird, Jamie S.; Johnson, Brett C.; Ganesan, Kumaravelu; Kandasamy, Sasikaran; Davidson, Garry; Borg, Stacey; Ryan, Chris G.

    2010-01-01

    The semiconducting properties and charge transport within natural minerals like pyrite are postulated to drive certain geochemical processes which can lead to precious metal ore genesis. In this paper we outline electrical measurements on mineral samples and present spatio-temporally resolved Ion Beam Induced Charge or Current studies on a Schottky pyrite junction. Au-Schottky contacts were fabricated in regions selected by thermoelectric and 4-point probe resistivity measurements. The complexity in charge transport due to impurity variations results in imaging contrast which is deemed important for fluid electrochemistry. The relevance of understanding charge collection in pyrite in the context of complex geochemical processes is briefly discussed.

  1. Intense ion beam generator

    International Nuclear Information System (INIS)

    Humphries, S. Jr.; Sudan, R.N.

    1977-01-01

    Methods and apparatus for producing intense megavolt ion beams are disclosed. In one embodiment, a reflex triode-type pulsed ion accelerator is described which produces ion pulses of more than 5 kiloamperes current with a peak energy of 3 MeV. In other embodiments, the device is constructed so as to focus the beam of ions for high concentration and ease of extraction, and magnetic insulation is provided to increase the efficiency of operation

  2. Ion beam analysis fundamentals and applications

    CERN Document Server

    Nastasi, Michael; Wang, Yongqiang

    2015-01-01

    Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization.The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nucle

  3. Quantitative assessment of the ion-beam irradiation induced direct damage of nucleic acid bases through FTIR spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Qing, E-mail: huangq@ipp.ac.cn [Key Laboratory of Ion Beam Bio-engineering, Institute of Technical Biology and Agriculture Engineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences (China); University of Science and Technology of China, Hefei 230029, Anhui (China); Su, Xi; Yao, Guohua; Lu, Yilin; Ke, Zhigang; Liu, Jinghua; Wu, Yuejin; Yu, Zengliang [Key Laboratory of Ion Beam Bio-engineering, Institute of Technical Biology and Agriculture Engineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences (China)

    2014-07-01

    Energetic particles exist ubiquitously in nature, and when they hit DNA molecules in organisms, they may induce critical biological effects such as mutation. It is however still a challenge to measure directly and quantitatively the damage imposed by the energetic ions on target DNA molecules. In this work we attempted to employ Fourier transformation infrared (FTIR) spectroscopy to assess the ion-induced direct damage of four nucleic acid bases, namely, thymine (T), cytosine (C), guanine (G), and adenine (A), which are the building blocks of DNA molecules. The samples were prepared as thin films, irradiated by argon ion-beams at raised ion fluences, and in the meantime measured by FTIR spectroscopy for the damage in a quasi-in-situ manner. It was found that the low-energy ion-beam induced radiosensitivity of the four bases shows the sequence G > T > C > A, wherein the possible mechanism was also discussed.

  4. Cluster ion beam facilities

    International Nuclear Information System (INIS)

    Popok, V.N.; Prasalovich, S.V.; Odzhaev, V.B.; Campbell, E.E.B.

    2001-01-01

    A brief state-of-the-art review in the field of cluster-surface interactions is presented. Ionised cluster beams could become a powerful and versatile tool for the modification and processing of surfaces as an alternative to ion implantation and ion assisted deposition. The main effects of cluster-surface collisions and possible applications of cluster ion beams are discussed. The outlooks of the Cluster Implantation and Deposition Apparatus (CIDA) being developed in Guteborg University are shown

  5. Focused-ion-beam induced interfacial intermixing of magnetic bilayers for nanoscale control of magnetic properties

    International Nuclear Information System (INIS)

    Burn, D M; Atkinson, D; Hase, T P A

    2014-01-01

    Modification of the magnetic properties in a thin-film ferromagnetic/non-magnetic bilayer system by low-dose focused ion-beam (FIB) induced intermixing is demonstrated. The highly localized capability of FIB may be used to locally control magnetic behaviour at the nanoscale. The magnetic, electronic and structural properties of NiFe/Au bilayers were investigated as a function of the interfacial structure that was actively modified using focused Ga + ion irradiation. Experimental work used MOKE, SQUID, XMCD as well as magnetoresistance measurements to determine the magnetic behavior and grazing incidence x-ray reflectivity to elucidate the interfacial structure. Interfacial intermixing, induced by low-dose irradiation, is shown to lead to complex changes in the magnetic behavior that are associated with monotonic structural evolution of the interface. This behavior may be explained by changes in the local atomic environment within the interface region resulting in a combination of processes including the loss of moment on Ni and Fe, an induced moment on Au and modifications to the spin-orbit coupling between Au and NiFe. (paper)

  6. Tuning the shape and damage in ion-beam induced ripples on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany); Hanisch, Antje; Grenzer, Joerg [Helmholtz-Zentrum Dresden-Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, P.O. Box 510119, 01314 Dresden (Germany); Metzger, Till Hartmut [ESRF, 6 rue Jules Horowitz, BP220, 38043 Grenoble Cedex (France)

    2011-11-15

    We investigate the influence of ion beam parameters on the ripple formation on Si(001) surfaces after bombardment with Xe{sup +} ions of 25 keV kinetic energy using a scanning ion beam system. By combining grazing incidence X-ray diffraction, small angle scattering and X-ray reflectivity, we show that during ion irradiation with 70 off-normal angle of incidence, changing the size of the irradiated area leads to an increased number of defects at the interface towards crystalline material. At 65 angle of incidence, the ripple amplitude grows. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Flux threshold measurements of He-ion beam induced nanofuzz formation on hot tungsten surfaces

    International Nuclear Information System (INIS)

    Meyer, F W; Hijazi, H; Bannister, M E; Unocic, K A; Garrison, L M; Parish, C M

    2016-01-01

    We report measurements of the energy dependence of flux thresholds and incubation fluences for He-ion induced nano-fuzz formation on hot tungsten surfaces at UHV conditions over a wide energy range using real-time sample imaging of tungsten target emissivity change to monitor the spatial extent of nano-fuzz growth, corroborated by ex situ SEM and FIB/SEM analysis, in conjunction with accurate ion-flux profile measurements. The measurements were carried out at the multicharged ion research facility (MIRF) at energies from 218 eV to 8.5 keV, using a high-flux deceleration module and beam flux monitor for optimizing the decel optics on the low energy MIRF beamline. The measurements suggest that nano-fuzz formation proceeds only if a critical rate of change of trapped He density in the W target is exceeded. To understand the energy dependence of the observed flux thresholds, the energy dependence of three contributing factors: ion reflection, ion range and target damage creation, were determined using the SRIM simulation code. The observed energy dependence can be well reproduced by the combined energy dependences of these three factors. The incubation fluences deduced from first visual appearance of surface emissivity change were (2–4) × 10 23 m −2 at 218 eV, and roughly a factor of 10 less at the higher energies, which were all at or above the displacement energy threshold. The role of trapping at C impurity sites is discussed. (paper)

  8. Effects of focused ion beam induced damage on the plasticity of micropillars

    International Nuclear Information System (INIS)

    El-Awady, Jaafar A.; Woodward, Christopher; Dimiduk, Dennis M.; Ghoniem, Nasr M.

    2009-01-01

    The hardening effects of focused ion beam (FIB) induced damage produced during the fabrication of micropillars are examined by introducing a surface layer of nanosized obstacles into a dislocation dynamics simulation. The influence of the depth and strength of the obstacles as a function of pillar diameter is assessed parametrically. We show that for a selected set of sample sizes between 0.5 and 1.0 μm, the flow strength can increase by 10-20 %, for an obstacle strength of 750 MPa, and damage depth of 100 nm. On the other hand, for sizes larger and smaller than this range, the effect of damage is negligible. Results show that the obstacles formed during the FIB milling may be expected to alter the microstructure of micropillars, however, they have a negligible effect on the observed size-strength scaling laws.

  9. Investigation of the depth profile of ion beam induced nanopatterns on Si with simultaneous metal incorporation

    Energy Technology Data Exchange (ETDEWEB)

    Khanbabaee, Behnam; Arezki, Bahia; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Siegen (Germany); Cornejo, Marina; Frost, Frank [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

    2011-07-01

    Ion beam sputtering of semiconductor surfaces can modify the surface and produce a diversity of surface topographies such as periodic ripples or dot structures depended on sputtering parameters. Well ordered nanostructured surfaces have widely technological applications. Recent experiments have shown that the incorporation of metallic impurity atoms during the sputtering process plays a crucial role in pattern formation on the surfaces. These findings offer a new degree of freedom to control pattern formation. In this contribution we report on surface patterning due to Kr ion beam erosion on silicon surfaces with simultaneous Fe and Cr incorporation. We used X-ray reflectivity (XRR) to determine the depth profiles of metal ions as function of ion beam divergence angles and the mean incidence angle of the ions with respect to the surface normal. Depth profiles are correlated with degree of pattern formation determined by AFM. We show that the mean penetration depth and concentration of metal ions depends on the divergence angle of Kr beam provided by Kaufman source which supports the assumption that metal ions are created due to parasitic interaction of the Kr beam with the steel plate lining. The evaluated depth profile by XRR is in good agreement with SIMS and RBS results.

  10. Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, E.; Kotai, E. [Magyar Tudomanyos Akademia, Budapest (HU). Research Inst. for Particle and Nuclear Physics (RIPNP); Khanh, N.Q.; Horvath, Z.E.; Lohner, T.; Battistig, G.; Zolnai, Z.; Gyulai, J. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary)

    2001-07-01

    Damage created by implantation of Al{sup +} ions into 4H-SiC is characterized using backscattering spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV {sup 12}C({alpha},{alpha}){sup 12}C resonance. To create disorder, Al{sup +} ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC. (orig.)

  11. Angular Dependence of the Ion-Induced Secondary Electron Emission for He+ and Ga+ Beams

    NARCIS (Netherlands)

    Castaldo, V.; Withagen, J.; Hagen, C.; Kruit, P.; Van Veldhoven, E.

    2011-01-01

    In recent years, novel ion sources have been designed and developed that have enabled focused ion beam machines to go beyond their use as nano-fabrication tools. Secondary electrons are usually taken to form images, for their yield is high and strongly dependent on the surface characteristics, in

  12. Mega-electron-volt ion beam induced anisotropic plasmon resonance of silver nanocrystals in glass

    NARCIS (Netherlands)

    Penninkhof, JJ; Polman, A; Sweatlock, LA; Maier, SA; Atwater, HA; Vredenberg, AM; Kooi, BJ; Sweatlock, Luke A.; Maier, Stefan A.

    2003-01-01

    30 MeV Si ion beam irradiation of silica glass containing Ag nanocrystals causes alignment of Ag nanocrystals in arrays along the ion tracks. Optical transmission measurements show a large splitting of the surface plasmon resonance bands for polarizations longitudinal and transversal to the arrays.

  13. A new route to nanoscale tomographic chemical analysis: Focused ion beam-induced auger electron spectrosocpy

    Science.gov (United States)

    Parvaneh, Hamed

    This research project is aimed to study the application of ion-induced Auger electron spectroscopy (IAES) in combination with the characteristics of focused ion beam (FIB) microscopy for performing chemical spectroscopy and further evaluate its potential for 3-dimensional chemical tomography applications. The mechanism for generation of Auger electrons by bombarding ions is very different from its electron induced counterpart. In the conventional electron-induced Auger electron spectroscopy (EAES), an electron beam with energy typically in the range 1-10kV is used to excite inner-shell (core) electrons of the solid. An electron from a higher electron energy state then de-excites to fill the hole and the extra energy is then transferred to either another electron, i.e. the Auger electron, or generation of an X-ray (photon). In both cases the emitting particles have charac-teristic energies and could be used to identify the excited target atoms. In IAES, however, large excitation cross sections can occur by promotion of in-ner shell electrons through crossing of molecular orbitals. Originally such phenomenological excitation processes were first proposed [3] for bi-particle gas phase collision systems to explain the generation of inner shell vacancies in violent collisions. In addition to excitation of incident or target atoms, due to a much heavier mass of ions compared to electrons, there would also be a substantial momentum transfer from the incident to the target atoms. This may cause the excited target atom to recoil from the lattice site or alternatively sputter off the surface with the possibility of de-excitation while the atom is either in motion in the matrix or traveling in vacuum. As a result, one could expect differences between the spectra induced by incident electrons and ions and interpretation of the IAE spectra requires separate consideration of both excitation and decay processes. In the first stage of the project, a state-of-the-art mass

  14. Measurement of secondary particle production induced by particle therapy ion beams impinging on a PMMA target

    Directory of Open Access Journals (Sweden)

    Toppi M.

    2016-01-01

    Full Text Available Particle therapy is a technique that uses accelerated charged ions for cancer treatment and combines a high irradiation precision with a high biological effectiveness in killing tumor cells [1]. Informations about the secondary particles emitted in the interaction of an ion beam with the patient during a treatment can be of great interest in order to monitor the dose deposition. For this purpose an experiment at the HIT (Heidelberg Ion-Beam Therapy Center beam facility has been performed in order to measure fluxes and emission profiles of secondary particles produced in the interaction of therapeutic beams with a PMMA target. In this contribution some preliminary results about the emission profiles and the energy spectra of the detected secondaries will be presented.

  15. Ion-beam technologies

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, G.R. [Argonne National Lab., IL (United States)

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  16. Ion beam studies

    International Nuclear Information System (INIS)

    Freeman, J.H.; Chivers, D.J.; Gard, G.A.; Temple, W.

    1977-04-01

    A description of techniques for the production of intense beams of heavy ions is given. A table of recommended operational procedures for most elements is included. The ionisation of boron is considered in some detail because of its particular importance as a dopant for ion implantation. (author)

  17. Biomaterials modification by ion beam

    International Nuclear Information System (INIS)

    Zhang Tonghe; Yi Zhongzhen; Zhang Xu; Wu Yuguang

    2001-01-01

    Ion beam technology is one of best ways for the modification of biomaterials. The results of ion beam modification of biomaterials are given. The method and results of improved biocompatibility are indicated by ion beam technology. The future development of ion beam modification of biomaterials is discussed

  18. Molecular dynamics studies of the ion beam induced crystallization in silicon

    International Nuclear Information System (INIS)

    Marques, L.A.; Caturla, M.J.; Huang, H.

    1995-01-01

    We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecular dynamics techniques. The growth of small crystal seeds embedded in the amorphous phase has been monitored for several temperatures in order to get information on the effect of the thermal temperature increase introduced by the incoming ion. The role of ion-induced defects on the growth has been also studied

  19. Carbon-ion beam irradiation kills X-ray-resistant p53-null cancer cells by inducing mitotic catastrophe.

    Directory of Open Access Journals (Sweden)

    Napapat Amornwichet

    Full Text Available BACKGROUND AND PURPOSE: To understand the mechanisms involved in the strong killing effect of carbon-ion beam irradiation on cancer cells with TP53 tumor suppressor gene deficiencies. MATERIALS AND METHODS: DNA damage responses after carbon-ion beam or X-ray irradiation in isogenic HCT116 colorectal cancer cell lines with and without TP53 (p53+/+ and p53-/-, respectively were analyzed as follows: cell survival by clonogenic assay, cell death modes by morphologic observation of DAPI-stained nuclei, DNA double-strand breaks (DSBs by immunostaining of phosphorylated H2AX (γH2AX, and cell cycle by flow cytometry and immunostaining of Ser10-phosphorylated histone H3. RESULTS: The p53-/- cells were more resistant than the p53+/+ cells to X-ray irradiation, while the sensitivities of the p53+/+ and p53-/- cells to carbon-ion beam irradiation were comparable. X-ray and carbon-ion beam irradiations predominantly induced apoptosis of the p53+/+ cells but not the p53-/- cells. In the p53-/- cells, carbon-ion beam irradiation, but not X-ray irradiation, markedly induced mitotic catastrophe that was associated with premature mitotic entry with harboring long-retained DSBs at 24 h post-irradiation. CONCLUSIONS: Efficient induction of mitotic catastrophe in apoptosis-resistant p53-deficient cells implies a strong cancer cell-killing effect of carbon-ion beam irradiation that is independent of the p53 status, suggesting its biological advantage over X-ray treatment.

  20. Nature of gallium focused ion beam induced phase transformation in 316L austenitic stainless steel

    International Nuclear Information System (INIS)

    Babu, R. Prasath; Irukuvarghula, S.; Harte, A.; Preuss, M.

    2016-01-01

    The microstructural evolution and chemistry of the ferrite phase (α), which transforms from the parent austenite phase (γ) of 316L stainless steel during gallium (Ga) ion beam implantation in Focused Ion Beam (FIB) instrument was systematically studied as a function of Ga"+ ion dose and γ grain orientations. The propensity for initiation of γ → α phase transformation was observed to be strongly dependent on the orientation of the γ grain with respect to the ion beam direction and correlates well with the ion channelling differences in the γ orientations studied. Several α variants formed within a single γ orientation and the sputtering rate of the material, after the γ → α transformation, is governed by the orientation of α variants. With increased ion dose, there is an evolution of orientation of the α variants towards a variant of higher Ga"+ channelling. Unique topographical features were observed within each specific γ orientation that can be attributed to the orientation of defects formed during the ion implantation. In most cases, γ and α were related by either Kurdjumov-Sachs (KS) or Nishiyama-Wassermann (NW) orientation relationship (OR) while in few, no known OR's were identified. While our results are consistent with gallium enrichment being the cause for the γ → α phase transformation, some observations also suggest that the strain associated with the presence of gallium atoms in the lattice has a far field stress effect that promotes the phase transformation ahead of gallium penetration.

  1. Ion-beam-induced aggregation in polystyrene: The influence of the molecular parameters

    International Nuclear Information System (INIS)

    Puglisi, O.; Licciardello, A.; Calcagno, L.; Foti, G.

    1988-01-01

    The formation of an insoluble gel under ion-beam bombardment is governed by ion-beam parameters and target parameters. Here reported is a study of the influence of the target molecular parameters on the sol--gel transition of ion-bombarded polystyrene with particular emphasis for the number-average molecular weight M-bar/sub n/. It is shown that the main parameter is the number of macromolcules of the film so that by adopting a ''corrected'' fluence F/n (ions per macromolecule), the different curves of the various polymers collapse in only one universal curve. The importance of the ''corrected'' fluence is shown also at molecular level and the MWD of the various polymers is similar at equal F/n values. An experimental model is outlined which explains the sol--gel transition on the basis of transition from an isolated-track regime to an overlap regime where the formation of insoluble giant macromolecules occurs

  2. Negative ion beam processes

    International Nuclear Information System (INIS)

    Hayward, T.D.; Lawrence, G.P.; Bentley, R.F.; Malanify, J.J.; Jackson, J.A.

    1975-06-01

    Los Alamos Scientific Laboratory fiscal year 1975 work on production of intense, very bright, negative hydrogen (H - ), ion beams and conversion of a high-energy (a few hundred MeV) negative beam into a neutral beam are described. The ion source work has used a cesium charge exchange source that has produced H - ion beams greater than or equal to 10 mA (about a factor of 10 greater than those available 1 yr ago) with a brightness of 1.4 x 10 9 A/m 2 -rad 2 (about 18 times brighter than before). The high-energy, neutral beam production investigations have included measurements of the 800-MeV H - -stripping cross section in hydrogen gas (sigma/sub -10/, tentatively 4 x 10 -19 cm 2 ), 3- to 6-MeV H - -stripping cross sections in a hydrogen plasma (sigma/sub -10/, tentatively 2 to 4 x 10 -16 cm 2 ), and the small-angle scattering that results from stripping an 800-MeV H - ion beam to a neutral (H 0 ) beam in hydrogen gas. These last measurements were interrupted by the Los Alamos Meson Physics Facility shutdown in December 1974, but should be completed early in fiscal year 1976 when the accelerator resumes operation. Small-angle scattering calculations have included hydrogen gas-stripping, plasma-stripping, and photodetachment. Calculations indicate that the root mean square angular spread of a 390-MeV negative triton (T - ) beam stripped in a plasma stripper may be as low as 0.7 μrad

  3. Ion beam texturing

    Science.gov (United States)

    Hudson, W. R.

    1977-01-01

    A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

  4. A comparison of ion beam measurements by retarding field energy analyzer and laser induced fluorescence in helicon plasma devices

    Energy Technology Data Exchange (ETDEWEB)

    Gulbrandsen, N., E-mail: njal.gulbrandsen@uit.no; Fredriksen, Å. [Department of Physics and Technology, UiT The Arctic University of Norway, 9037 Tromsø (Norway); Carr, J. [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506 (United States); Department of Physics, Texas Lutheran University, Seguin, Texas 78155 (United States); Scime, E. [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506 (United States)

    2015-03-15

    Both Laser-Induced Fluorescence (LIF) and Retarding Field Energy Analyzers (RFEA) have been applied to the investigation of beams formed in inductively coupled helicon plasmas. While the LIF technique provides a direct measurement of the velocity distribution in the plasma, the RFEA measures ion flux as a function of a retarding potential. In this paper, we present a method to compare the two techniques, by converting the LIF velocity distribution to an equivalent of a RFEA measurement. We applied this method to compare new LIF and RFEA measurements in two different experiments; the Hot Helicon Experiment (HELIX) - Large Experiment on Instabilities and Anisotropies (LEIA) at West Virginia University and Njord at University of Tromsø. We find good agreement between beam energies of the two methods. In agreement with earlier observations, the RFEA is found to measure ion beams with densities too low for the LIF to resolve. In addition, we present measurements of the axial development of the ion beam in both experiments. Beam densities drop exponentially with distance from the source, both in LIF and RFEA measurements. The effective quenching cross section from LIF in LEIA is found to be σ{sub b,*}=4×10{sup −19} m{sup 2}, and the effective beam collisional cross sections by RFEA in Njord to be σ{sub b}=1.7×10{sup −18} m{sup 2}.

  5. 3D magnetic nanostructures grown by focused electron and ion beam induced deposition

    Science.gov (United States)

    Fernandez-Pacheco, Amalio

    Three-dimensional nanomagnetism is an emerging research area, where magnetic nanostructures extend along the whole space, presenting novel functionalities not limited to the substrate plane. The development of this field could have a revolutionary impact in fields such as electronics, the Internet of Things or bio-applications. In this contribution, I will show our recent work on 3D magnetic nanostructures grown by focused electron and ion beam induced deposition. This 3D nano-printing techniques, based on the local chemical vapor deposition of a gas via the interaction with electrons and ions, makes the fabrication of complex 3D magnetic nanostructures possible. First, I will show how by exploiting different growth regimes, suspended Cobalt nanowires with modulated diameter can be patterned, with potential as domain wall devices. Afterwards, I will show recent results where the synthesis of Iron-Gallium alloys can be exploited in the field of artificial multiferroics. Moreover, we are developing novel methodologies combining physical vapor deposition and 3D nano-printing, creating Permalloy 3D nanostrips with controllable widths and lengths up to a few microns. This approach has been extended to more complex geometries by exploiting advanced simulation growth techniques combining Monte Carlo and continuum model methods. Throughout the talk, I will show the methodology we are following to characterize 3D magnetic nanostructures, by combining magneto-optical Kerr effect, scanning probe microscopy and electron and X-R magnetic imaging, and I will highlight some of the challenges and opportunities when studying these structures. I acknowledge funding from EPSRC and the Winton Foundation.

  6. Methods of optimising ion beam induced charge collection of polycrystalline silicon photovoltaic cells

    International Nuclear Information System (INIS)

    Witham, L.C.G.; Jamieson, D.N.; Bardos, R.A.

    1998-01-01

    Ion Beam Induced Charge (IBIC) is a valuable method for the mapping of charge carrier transport and recombination in silicon solar cells. However performing IBIC analysis of polycrystalline silicon solar cells is problematic in a manner unlike previous uses of IBIC on silicon-based electronic devices. Typical solar cells have a surface area of several square centimeters and a p-n junction thickness of only few microns. This means the cell has a large junction capacitance in the many nanoFarads range which leads to a large amount of noise on the preamplifier inputs which typically swamps the transient IBIC signal. The normal method of improving the signal-to-noise (S/N) ratio by biasing the junction is impractical for these cells as the low-quality silicon used leads to a large leakage current across the device. We present several experimental techniques which improve the S/N ratio which when used together should make IBIC analysis of many low crystalline quality devices a viable and reliable procedure. (authors)

  7. Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

    2017-11-01

    The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

  8. Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Naramoto, H.

    2007-01-01

    In this work, we implanted B + , O + , Al + , and P + ions into ZnO with energy of 50-380 keV and total doses of 4 x 10 15 cm -2 for each ion. The implantation-induced defects and their thermal recovery were studied using a slow positron beam. Vacancy clusters are produced in all the implanted samples. It is found that the thermal recovery of these vacancies induced by different ions shows much difference. In case of B + and Al + -implantation, the vacancy clusters agglomerate to much larger size and might evolve to microvoids during annealing. However, for O + and P + ions, which are heavier than B + and Al + , the vacancies show a much weaker agglomeration process. The mechanism of such difference is discussed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Ion beam inertial fusion

    International Nuclear Information System (INIS)

    Bangerter, R.O.

    1995-01-01

    About twenty years ago, A. W. Maschke of Brookhaven National Laboratory and R. L. Martin of Argonne National Laboratory recognized that the accelerators that have been developed for high energy and nuclear physics are, in many ways, ideally suited to the requirements of inertial fusion power production. These accelerators are reliable, they have a long operating life, and they can be efficient. Maschke and Martin noted that they can focus ion beams to small focal spots over distances of many meters and that they can readily operate at the high pulse repetition rates needed for commercial power production. Fusion, however, does impose some important new constraints that are not important for high energy or nuclear physics applications. The most challenging new constraint from a scientific standpoint is the requirement that the accelerator deliver more than 10 14 W of beam power to a small quantity (less than 100 mg) of matter. The most challenging constraint from an engineering standpoint is accelerator cost. Maschke showed theoretically that accelerators could produce adequate work. Heavy-ion fusion is widely recognized to be a promising approach to inertial fusion power production. It provides an excellent opportunity to apply methods and technology developed for basic science to an important societal need. The pulsed-power community has developed a complementary, parallel approach to ion beam fusion known as light-ion fusion. The talk will discuss both heavy-ion and light-ion fusion. It will explain target physics requirements and show how they lead to constraints on the usual accelerator parameters such as kinetic energy, current, and emittance. The talk will discuss experiments that are presently underway, specifically experiments on high-current ion sources and injectors, pulsed-power machines recirculating induction accelerators, and transverse beam combining. The talk will give a brief description of a proposed new accelerator called Elise

  10. Measurement and simulation of the effects of ion-induced defects on ion beam-induced charge (IBIC) measurements in Si schottky diodes

    International Nuclear Information System (INIS)

    Hearne, S.M.; Lay, M.D.H.; Jamieson, D.N.

    2004-01-01

    Full text: The Ion Beam Induced Charge (IBIC) technique is a very sensitive tool for investigating the electronic properties of semiconductor materials and devices. However, obtaining quantitative information from IBIC experiments requires an accurate model of the materials properties. The interaction of high energy ions with crystalline materials is known to create point defects within the crystal. A significant proportion of defects introduced by the interaction of the ion with the crystal are electrically active and are therefore an important consideration when undertaking an IBIC experiment. The goal of this work is to investigate the possibility of including the relevant defect parameters in computer simulations of the IBIC experiment implemented using Technology Computer Aided Design (TCAD) software. We will present the results from an IBIC study on Si Schottky diodes using 1 MeV alphas. A reduction of greater than 50% in the detected IBIC signal was observed for fluences greater than 5x10 10 He + /cm 2 . The trap parameters following ion irradiation were determined experimentally using DLTS. Comparisons between the experimental IBIC results and TCAD simulations will be discussed

  11. Distribution of products in polymer materials induced by ion-beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sugimoto, Masaki; Kudoh, Hisaaki; Sasuga, Tsuneo; Seguchi, Tadao [Japan Atomic Energy Research Inst., Tokyo (Japan); Hama, Yoshimasa; Hamanaka, Ken-ichi; Matsumoto, Hideya

    1997-03-01

    The depth profile of double bond formed in low density polyethylene (LDPE) sheet by ion beams irradiation was observed by a micro FT-IR spectrometer in order to investigate the linear energy transfer (LET) dependency on radiation effects to polymer materials. The distribution of double bond formation in LDPE by irradiation of light ions as H+ was found to be same with the dose distribution calculated from TRIM code, and the yield was also same with that by gamma-rays irradiation, which means that the LET dependency is very small. However, the distribution of double bond to depth was much different from the calculated depth-dose in heavy ions irradiation as Ar and Kr. Then, the dose evaluation was difficult from the TRIM code calculation for heavy ions. (author)

  12. The study of the ion beam induced swelling in crystalline germanium irradiated by a 30 keV Ga+ focused ion beam

    International Nuclear Information System (INIS)

    Rubanov, S.; Munroe, P.R.; Stevens-Kalceff, M.

    2005-01-01

    The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga + focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of ∼10 17 ions/cm 2 . Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs

  13. Ion beam analysis

    International Nuclear Information System (INIS)

    Bethge, K.

    1995-01-01

    Full text: Ion beam analysis is an accelerator application area for the study of materials and the structure of matter; electrostatic accelerators of the Van de Graaff or Dynamitron type are often used for energies up to a few MeV. Two types of machines are available - the single-ended accelerator type with higher beam currents and greater flexibility of beam management, or the tandem accelerator, limited to atomic species with negative ions. The accelerators are not generally installed at specialist accelerator laboratories and have to be easy to maintain and simple to operate. The most common technique for industrial research is Rutherford Back Scattering Spectrometry (RBS). Helium ions are the preferred projectiles, since at elevated energies (above 3 MeV) nuclear resonance scattering can be used to detect photons associated with target molecules containing elements such as carbon, nitrogen or oxygen. Due to the large amount of available data on nuclear reactions in this energy range, activation analysis (detecting trace elements by irradiating the sample) can be performed with charged particles from accelerators over a wider range of atoms than with the conventional use of neutrons, which is more suited to light elements. Resonance reactions have been used to detect trace metals such as aluminium, titanium and vanadium. Hydrogen atoms are vital to the material performance of several classes of materials, such as semiconductors, insulators and ceramics. Prudent selection of the projectile ion aids the analysis of hydrogen composition; the technique is then a simple measurement of the emitted gamma radiation. Solar cell material and glass can be analysed in this way. On a world-wide basis, numerous laboratories perform ion beam analysis for research purposes; considerable work is carried out in cooperation between scientific laboratories and industry, but only a few laboratories provide a completely commercial service

  14. Highly efficient generation of ultraintense high-energy ion beams using laser-induced cavity pressure acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Badziak, J.; Jablonski, S.; Raczka, P. [Institute of Plasma Physics and Laser Microfusion, Euratom Association, 01-497 Warsaw (Poland)

    2012-08-20

    Results of particle-in-cell (PIC) simulations of fast ion generation in the recently proposed laser-induced cavity pressure acceleration (LICPA) scheme in which a picosecond circularly polarized laser pulse of intensity {approx}10{sup 21} W/cm{sup 2} irradiates a carbon target placed in a cavity are presented. It is shown that due to circulation of the laser pulse in the cavity, the laser-ions energy conversion efficiency in the LICPA scheme is more than twice as high as that for the conventional (without a cavity) radiation pressure acceleration scheme and a quasi-monoenergetic carbon ion beam of the mean ion energy {approx}0.5 GeV and the energy fluence {approx}0.5 GJ/cm{sup 2} is produced with the efficiency {approx}40%. The results of PIC simulations are found to be in fairly good agreement with the predictions of the generalized light-sail model.

  15. Irradiation With Carbon Ion Beams Induces Apoptosis, Autophagy, and Cellular Senescence in a Human Glioma-Derived Cell Line

    International Nuclear Information System (INIS)

    Jinno-Oue, Atsushi; Shimizu, Nobuaki; Hamada, Nobuyuki; Wada, Seiichi; Tanaka, Atsushi; Shinagawa, Masahiko; Ohtsuki, Takahiro; Mori, Takahisa; Saha, Manujendra N.; Hoque, Ariful S.; Islam, Salequl; Kogure, Kimitaka; Funayama, Tomoo; Kobayashi, Yasuhiko

    2010-01-01

    Purpose: We examined biological responses of human glioma cells to irradiation with carbon ion beams (C-ions). Methods and Materials: A human glioma-derived cell line, NP-2, was irradiated with C-ions. Apoptotic cell nuclei were stained with Hoechst 33342. Induction of autophagy was examined either by staining cells with monodansylcadaverine (MDC) or by Western blotting to detect conversion of microtuble-associated protein light chain 3 (MAP-LC3) (LC3-I) to the membrane-bound form (LC3-II). Cellular senescence markers including induction of senescence-associated β-galactosidase (SA-β-gal) were examined. The mean telomere length of irradiated cells was determined by Southern blot hybridization. Expression of tumor suppressor p53 and cyclin/cyclin-dependent kinase inhibitor p21 WAF1/CIP1 in the irradiated cells was analyzed by Western blotting. Results: When NP-2 cells were irradiated with C-ions at 6 Gy, the major population of the cells died of apoptosis and autophagy. The residual fraction of attached cells ( WAF1/CIP1 was induced in NP-2 cells after irradiation. Furthermore, we found that irradiation with C-ions induced cellular senescence in a human glioma cell line lacking functional p53. Conclusions: Irradiation with C-ions induced apoptosis, autophagy, and cellular senescence in human glioma cells.

  16. Hypervelocity dust impact craters on photovoltaic devices imaged by ion beam induced charge

    International Nuclear Information System (INIS)

    Yang, Changyi; Wu, Yiyong; Lv, Gang; Rubanov, Sergey; Jamieson, David N.

    2015-01-01

    Hypervelocity dust has a speed of greater than 5 km/s and is a significant problem for equipment deployed in space such as satellites because of impacts that damage vulnerable components. Photovoltaic (PV) arrays are especially vulnerable because of their large surface area and the performance can be degraded owing to the disruption of the structure of the junction in the cells making up the array. Satellite PV arrays returned to Earth after service in orbit reveal a large number of craters larger than 5 μm in diameter arising from hypervelocity dust impacts. Extensive prior work has been done on the analysis of the morphology of craters in PV cells to understand the origin of the micrometeoroid that caused the crater and to study the corresponding mechanical damage to the structure of the cell. Generally, about half the craters arise from natural micrometeoroids, about one third from artificial Al-rich debris, probably from solid rocket exhausts, and the remainder from miscellaneous sources both known and unknown. However to date there has not been a microscopic study of the degradation of the electrical characteristics of PV cells exposed to hypervelocity dust impacts. Here we present an ion beam induced charge (IBIC) pilot study by a 2 MeV He microbeam of craters induced on a Hamamatsu PIN diode exposed to artificial hypervelocity Al dust from a dust accelerator. Numerous 5–30 μm diameter craters were identified and the charge collection efficiency of the crater and surrounds mapped with IBIC with bias voltages between 0 and 20 V. At highest bias, it was found the efficiency of the crater had been degraded by about 20% compared to the surrounding material. The speed distribution achieved in the Al dust accelerator was peaked at about 4 km/s compared to 11–68 km/s for dust encountered in low Earth orbit. We are able to extrapolate the charge collection efficiency degradation rate of unbiased cells in space based on our current measurements and the

  17. Hypervelocity dust impact craters on photovoltaic devices imaged by ion beam induced charge

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Changyi [School of Physics, University of Melbourne, Parkville, VIC 3010 (Australia); Wu, Yiyong; Lv, Gang [National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environments, Harbin Institute of Technology, Harbin (China); Rubanov, Sergey [Bio21 Molecular Science and Biotechnology Institute, University of Melbourne, Parkville, VIC 3010 (Australia); Jamieson, David N., E-mail: d.jamieson@unimelb.edu.au [School of Physics, University of Melbourne, Parkville, VIC 3010 (Australia)

    2015-04-01

    Hypervelocity dust has a speed of greater than 5 km/s and is a significant problem for equipment deployed in space such as satellites because of impacts that damage vulnerable components. Photovoltaic (PV) arrays are especially vulnerable because of their large surface area and the performance can be degraded owing to the disruption of the structure of the junction in the cells making up the array. Satellite PV arrays returned to Earth after service in orbit reveal a large number of craters larger than 5 μm in diameter arising from hypervelocity dust impacts. Extensive prior work has been done on the analysis of the morphology of craters in PV cells to understand the origin of the micrometeoroid that caused the crater and to study the corresponding mechanical damage to the structure of the cell. Generally, about half the craters arise from natural micrometeoroids, about one third from artificial Al-rich debris, probably from solid rocket exhausts, and the remainder from miscellaneous sources both known and unknown. However to date there has not been a microscopic study of the degradation of the electrical characteristics of PV cells exposed to hypervelocity dust impacts. Here we present an ion beam induced charge (IBIC) pilot study by a 2 MeV He microbeam of craters induced on a Hamamatsu PIN diode exposed to artificial hypervelocity Al dust from a dust accelerator. Numerous 5–30 μm diameter craters were identified and the charge collection efficiency of the crater and surrounds mapped with IBIC with bias voltages between 0 and 20 V. At highest bias, it was found the efficiency of the crater had been degraded by about 20% compared to the surrounding material. The speed distribution achieved in the Al dust accelerator was peaked at about 4 km/s compared to 11–68 km/s for dust encountered in low Earth orbit. We are able to extrapolate the charge collection efficiency degradation rate of unbiased cells in space based on our current measurements and the

  18. N+ ion-implantation-induced defects in ZnO studied with a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z Q; Sekiguchi, T; Yuan, X L; Maekawa, M; Kawasuso, A

    2004-01-01

    Undoped ZnO single crystals were implanted with multiple-energy N + ions ranging from 50 to 380 keV with doses from 10 12 to 10 14 cm -2 . Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N + implantation, the ZnO layer still shows n-type conductivity

  19. Formation of plasmid DNA strand breaks induced by low-energy ion beam: indication of nuclear stopping effects

    International Nuclear Information System (INIS)

    Chen Yu; Jiang Bingyao; Chen Youshan; Ding Xingzhao; Liu Xianghuai; Chen Ceshi; Guo Xinyou; Yin Guanglin

    1998-01-01

    Plasmid pGEM 3zf(+) was irradiated by nitrogen ion beam with energies between 20 and 100 keV and the fluence kept as 1 x 10 12 ions/cm 2 . The irradiated plasmid was assayed by neutral electrophoresis and quantified by densitometry. The yields of DNA with single-strand and double-strand breaks first increased then decreased with increasing ion energy. There was a maximal yield value in the range of 20-100 keV. The relationship between DNA double-strand breaks (DSB) cross-section and linear energy transfer (LET) also showed a peak-shaped distribution. To understand the physical process during DNA strand breaks, a Monte Carlo calculation code known as TRIM (Transport of Ions in Matter) was used to simulate energy losses due to nuclear stopping and to electronic stopping. It can be assumed that nuclear stopping plays a more important role in DNA strand breaks than electronic stopping in this energy range. The physical mechanisms of DNA strand breaks induced by a low-energy ion beam are also discussed. (orig.)

  20. Ion Beam Extraction by Discrete Ion Focusing

    DEFF Research Database (Denmark)

    2010-01-01

    An apparatus (900) and methods are disclosed for ion beam extraction. In an implementation, the apparatus includes a plasma source (or plasma) (802) and an ion extractor (804). The plasma source is adapted to generate ions and the ion extractor is immersed in the plasma source to extract a fracti...

  1. Post-ion beam induced degradation of copper layers in transmission electron microscopy specimens

    Science.gov (United States)

    Seidel, F.; Richard, O.; Bender, H.; Vandervorst, W.

    2015-11-01

    Copper containing transmission electron microscopy (TEM) specimens frequently show corrosion after focused ion beam (FIB) preparation. This paper reveals that the corrosion product is a Cu-S phase growing over the specimen surface. The layer is identified by energy-dispersive x-ray spectroscopy, and lattice spacing indexing of power spectra patterns. The corrosion process is further studied by TEM on cone-shaped specimens, which are intentionally stored after FIB preparation with S flakes for short time. Furthermore, a protective method against corrosion is developed by varying the time in the FIB vacuum and the duration of a subsequent plasma cleaning.

  2. Ion-implantation induced defects in ZnO studied by a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Sekiguchi, T.; Suzuki, R.

    2004-01-01

    Introduction and annealing behavior of defects in Al + -implanted ZnO have been studied using an energy variable slow positron beam. Vacancy clusters are produced after Al + -implantation. With increasing ion dose above 10 14 Al + /cm 2 the implanted layer is amorphized. Heat treatment up to 600 C enhances the creation of large voids that allow the positronium formation. The large voids disappear accompanying the recrystallization process by further heat treatment above 600 C. Afterwards, implanted Al impurities are completely activated to contribute to the n-type conduction. The ZnO crystal quality is also improved after recrystallization. (orig.)

  3. Ion-implantation induced defects in ZnO studied by a slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A. [Japan Atomic Energy Research Institute, Gunma (Japan); Sekiguchi, T. [National Inst. for Materials Science, Tsukuba, Ibaraki (Japan); Suzuki, R. [National Inst. of Advanced Industrial Science and Technology, Tsukuba, Ibaraki (Japan)

    2004-07-01

    Introduction and annealing behavior of defects in Al{sup +}-implanted ZnO have been studied using an energy variable slow positron beam. Vacancy clusters are produced after Al{sup +}-implantation. With increasing ion dose above 10{sup 14} Al{sup +}/cm{sup 2} the implanted layer is amorphized. Heat treatment up to 600 C enhances the creation of large voids that allow the positronium formation. The large voids disappear accompanying the recrystallization process by further heat treatment above 600 C. Afterwards, implanted Al impurities are completely activated to contribute to the n-type conduction. The ZnO crystal quality is also improved after recrystallization. (orig.)

  4. Radioactive ion beams produced by neutron-induced fission at ISOLDE

    CERN Document Server

    Catherall, R; Gilardoni, S S; Köster, U

    2003-01-01

    The production rates of neutron-rich fission products for the next-generation radioactive beam facility EURISOL are mainly limited by the maximum amount of power deposited by protons in the target. An alternative approach is to use neutron beams to induce fission in actinide targets. This has the advantage of reducing: the energy deposited by the proton beam in the target; contamination from neutron-deficient isobars that would be produced by spallation; and mechanical stress on the target. At ISOLDE CERN, tests have been made on standard ISOLDE actinide targets using fast neutron bunches produced by bombarding thick, high-Z metal converters with 1 and 1.4 GeV proton pulses. This paper reviews the first applications of converters used at ISOLDE. It highlights the different geometries and the techniques used to compare fission yields produced by the proton beam directly on the target with neutron-induced fission. Results from the six targets already tested, namely UC2/graphite and ThO2 targets with tungsten an...

  5. Investigations on ion-beam induced desorption from cryogenic surfaces; Untersuchungen zu ionenstrahlinduzierter Desorption von kryogenen Oberflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Maurer, Christoph

    2017-07-03

    pumps can be taken into account. This method can be extended to any desorption experiment employing the single shot method for measurement. Of special interest for the operation of the SIS100 at high intensities is the minimization of desorption from cryogenic surfaces. A previous examination of this topic found a breakdown of the familiar scaling of the desorption yield with the beam's energy loss for cryogenic targets. Further examination of this effect with the techniques described above is another goal of this thesis. Simultaneously, desorption measurements at room temperature for several other targets have been conducted. An unexpected result of these experiments is the influence of target surface properties, which was found to be very weak in comparison to previous results. The methods developed during this thesis, along with the results gained by their application, represent another step towards the comprehension of (heavy) ion beam induced desorption.

  6. Modification of mechanical properties of single crystal aluminum oxide by ion beam induced structural changes

    International Nuclear Information System (INIS)

    Ensinger, W.; Nowak, R.; Horino, Y.; Baba, K.

    1993-01-01

    The mechanical behaviour of ceramics is essentially determined by their surface qualities. As a surface modification technique, ion implantation provides the possibility to modify the mechanical properties of ceramics. Highly energetic ions are implanted into the near-surface region of a material and modify its composition and structure. Ions of aluminum, oxygen, nickel and tantalum were implanted into single-crystal α-aluminum oxide. Three-point bending tests showed that an increase in flexural strength of up to 30% could be obtained after implantation of aluminum and oxygen. Nickel and tantalum ion implantation increased the fracture toughness. Indentation tests with Knoop and Vickers diamonds and comparison of the lengths of the developed radial cracks showed that ion implantation leads to a reaction in cracking. The observed effects are assigned to radiation induced structural changes of the ceramic. Ion bombardment leads to radiation damage and formation of compressive stress. In case of tantalum implantation, the implanted near-surface zone becomes amorphous. These effects make the ceramic more resistant to fracture. (orig.)

  7. Focused ion beam technology

    International Nuclear Information System (INIS)

    Gamo, K.

    1993-01-01

    Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author)

  8. Heavy ion beam probing

    International Nuclear Information System (INIS)

    Hickok, R.L.

    1980-07-01

    This report consists of the notes distributed to the participants at the IEEE Mini-Course on Modern Plasma Diagnostics that was held in Madison, Wisconsin in May 1980. It presents an overview of Heavy Ion Beam Probing that briefly describes the principles and discuss the types of measurements that can be made. The problems associated with implementing beam probes are noted, possible variations are described, estimated costs of present day systems, and the scaling requirements for large plasma devices are presented. The final chapter illustrates typical results that have been obtained on a variety of plasma devices. No detailed calculations are included in the report, but a list of references that will provide more detailed information is included

  9. Mutation induction by ion beams in plants

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    2001-03-01

    The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

  10. Mutation induction by ion beams in plants

    International Nuclear Information System (INIS)

    Tanaka, Atsushi

    2001-01-01

    The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

  11. Ion-beam bombardment induced texture in nickel substrates for coated high-Tc superconductors

    International Nuclear Information System (INIS)

    Wang, S S; Wu, K; Zhou, Y; Godfrey, A; Meng, J; Liu, M L; Liu, Q; Liu, W; Han, Z

    2003-01-01

    Biaxially textured metal substrates are often used for making YBa 2 Cu 3 O 7-x coated conductors with high critical current density. Generally, specific rolling and high-temperature annealing procedures are required to obtain the biaxial texture for metal substrates. Here, we report on a new method for developing strongly biaxially textured grain structure in rolled nickel tape by argon ion-beam bombardment. X-ray diffraction (XRD) θ-2θ scans have shown that a (200) diffraction peak intensity of the Ni foil processed by ion-beam structure modification (ISM) is two orders of magnitude greater than that of cold-rolled foil, while the (111) and (220) intensities are very weak. In the ISM processed Ni foils, from the rocking curve, the full width at half maximum (FWHM) value of the (200) peak has been found to be less than 5.9 deg., whilst the in-plane FWHM obtained from a pole figure analysis is just 8 deg. We discuss the possible mechanisms leading to the texture changes during ISM. (rapid communication)

  12. Spatial control of cell attachment, proliferation, and differentiation using ion-beam induced thin films

    International Nuclear Information System (INIS)

    Tanaka, Toshiyuki; Suzuki, Yoshiaki

    2014-01-01

    Highlights: • Cellular films can be obtained ion-beam irradiation and cell culture. • Film shapes were controlled by patterned irradiation. • Cellular films were firmly attached each other. • Tubular constructions were fabricated by wide-patterned irradiation. • Nerve growth direction was controlled by varying the pattern widths. - Abstract: In this study, cellular films were fabricated by ion-beam irradiation into poly-L-lactic acid sheets and cell culture. The cellular film shapes can be controlled by pattern masks. We performed spatial cell patterning using three types of cells: fibroblasts, endothelial cells, and nerve-like cells. First, multi-layered cellular construct was fabricated by stacking fibroblast cellular films. When three cellular films were stacked and incubated, these films firmly attached to each other. Second, tubular constructs were fabricated by endothelial cell culture on linearly patterned surfaces with wide widths of 80, 120, 160, and 200 μm. The patterned cellular films were rounded into vessel-like structure. The diameters of the constructs depend upon the pattern widths. Finally, we controlled cell attachment and nerve growth of nerve-like cells by using linearly patterned surfaces with narrow widths of 10, 30, and 50 μm. Nerve growth direction was controlled by varying the pattern widths. In the case of 10 μm, the attached cells and nerve growth were straight on the patterned thin films. These cell patterning techniques are expected to have applications in tissue engineering, cell transplantation, and in vitro tissue modeling

  13. Analysis of the degradation induced by focused ion Ga3+ beam for the realization of piezoelectric nanostructures

    International Nuclear Information System (INIS)

    Remiens, D.; Liang, R. H.; Soyer, C.; Deresmes, D.; Troadec, D.; Quignon, S.; Da Costa, A.; Desfeux, R.

    2010-01-01

    Piezoelectric nanostructures (islands of dimensions in the lateral size range 50-500 nm) have been fabricated by focused Ga 3+ ion beam (FIB) etching on PbZr 0.54 Ti 0.46 O 3 thin films obtained by magnetron sputtering. The degradation induced by the etching process is investigated through the evolution of electromechanical activity measured by means of local piezoelectric hysteresis loops produced by piezoresponse force microscopy. The analysis of surface potential is performed by kelvin force microscopy and the measurement of current-voltage curves is carried out by conducting atomic force microscopy. Two kinds of structures, namely one based on crystallized films and the other based on amorphous ones, were studied. In this latter case, the amorphous films are postannealed after etching to obtain crystallized structure. For the structures based on the crystallized and then etched films, no piezoelectric signal was registered that evidences a serious degradation of material induced by Ga 3+ ion implantation. For the structures based on the films etched in amorphous state and then crystallized, the piezoresponse signal was near to that of the reference films (crystallized and not etched) whatever were the ion dose and the island dimensions. Even for very small lateral size (50 nm), no size effect was observed. The island shapes fabricated by Ga 3+ FIB etching process (islands with less than 50 nm lateral size) show a limitation of FIB processing and electron beam lithography seems to be necessary.

  14. Cornell electron beam ion source

    International Nuclear Information System (INIS)

    Kostroun, V.O.; Ghanbari, E.; Beebe, E.N.; Janson, S.W.

    1981-01-01

    An electron beam ion source (EBIS) for the production of low energy, multiply charged ion beams to be used in atomic physics experiments has been designed and constructed. An external high perveance electron gun is used to launch the electron beam into a conventional solenoid. Novel features of the design include a distributed sputter ion pump to create the ultrahigh vacuum environment in the ionization region of the source and microprocessor control of the axial trap voltage supplies

  15. Xe{sup +} ion beam induced rippled structures on Si miscut wafers

    Energy Technology Data Exchange (ETDEWEB)

    Hanisch, Antje; Grenzer, Joerg [Forschungszentrum Dresden-Rossendorf, Dresden (Germany); Biermanns, Andreas; Pietsch, Ullrich [Institute of Physics, University of Siegen (Germany)

    2009-07-01

    We report on the influence of the initial roughness and crystallography of the substrate on the formation of self-organized ripple structures on semiconductors surfaces by noble gas ion bombardment. The Bradley-Harper theory predicts that an initial roughness is most important for starting the sputtering process which in the ends leads to the evolution of regular patterns. We produced periodic structures with intermediate Xe{sup +} ion energies (5-70 keV) at different incidence and azimuthal angles which lead to the assumption that also crystallography plays a role at the beginning of ripple evolution. Most of the previous investigations started from the original roughness of a polished silicon wafer. We used (001) silicon wafers with a miscut angle of 1 , 5 and 10 towards[110]. We studied the ripple formation keeping the ion beam parallel to the[111],[-1-11] or[-111] direction, i.e. parallel, antiparallel or perpendicular to the miscut direction[110]. The parallel and antiparallel case implies a variation of the incidence angle with increased roughness over the surface step terraces. The perpendicular orientation means almost no roughness. The results were compared to normal Si(001) and Si(111) wafers.

  16. A three-dimensional relaxation model for calculation of atomic mixing and topography changes induces by ion beams

    International Nuclear Information System (INIS)

    Collins, R.; Perez-Martin, A.M.C.; Dominguez-Vazquez, J.; Jimenez-Rodriguez, J.J.

    1994-01-01

    A simple model for three-dimensional material relaxation associated with atomic mixing is presented. The relaxation of the solid to accommodate the extra effective displacement volume Ω of an implanted or relocated atom is modelled by treating the surrounding solid as an incompressible medium. This leads to a tractable general formalism which can be used to predict implant distribution and changes in surface topography induced by ion beams, both in monatomic and multicomponent targets. The two-component case is discussed in detail. (orig.)

  17. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  18. Surface modification of poly(tetrafluoroethylene) films by low energy Ar+ ion-beam activation and UV-induced graft copolymerization

    International Nuclear Information System (INIS)

    Zhang Yan; Huan, A.C.H.; Tan, K.L.; Kang, E.T.

    2000-01-01

    Surface modification of poly(tetrafluoroethylene) (PTFE) films by Ar + ion-beam irradiation with varying ion energy and ion dose was carried out. The changes in surface composition of the irradiated PTFE films were characterized, both in situ and after exposure to air, by X-ray photoelectron spectroscopy (XPS). The possible mechanisms of chemical reaction induced by the incident ion beam on the surface of PTFE film included defluorination, chain scission and cross-linking, as indicated by the presence of the characteristic peak components associated with the - - -CF 3 , - - -CF, and C(CF 2 ) 4 species in the C 1s core-level spectra, the decrease in surface [F]/[C] ratio, and the increase in surface micro-hardness of the Ar + ion-beam-treated PTFE films. Furthermore, the free radicals generated by the ion-beam could react with oxygen in the air to give rise to oxidized carbon species, such as the peroxides, on the PTFE surface. Thus, after exposure to air, the Ar + ion-beam-pretreated PTFE films were susceptible to further surface modification by UV-induced graft copolymerization with a vinyl monomer, such as acrylamide (AAm). The graft concentrations were deduced from the XPS-derived surface stoichiometries. The Ar + ion energy and the ion dose affected not only the surface composition of the treated films but also the graft copolymerization efficiency of the corresponding pretreated films

  19. Ion beam modification of sputtered metal nitride thin films: A study of the induced microstructural changes

    International Nuclear Information System (INIS)

    Milosavljevic, M.; Perusko, D.; Popovic, M.; Novakovic, M.

    2008-01-01

    Single CrN and TiN and multilayered AlN/TiN and Al/Ti thin film structures (t = 240-280 nm) deposited on Si were irradiated with 120-200 keV Ar + ions to the fluences ranging from 1 x 10 11 5 to 4 x 10 16 ions/cm 2 . The metallic Al/Ti multilayered structure was also irradiated with high fluence (1- 2 x 10 17 /cm 2 ) nitrogen ions at 200 keV, in order to study interface mixing and formation of nitrides. Single component CrN and TiN thin films were found to grow in the form of a very fine polycrystalline columnar structures. Individual crystal grains were of the order of a few tens of nm in diameter, stretching from the substrate to the surface. After ion irradiation, the layers retain their polycrystalline structure, although the columns become disconnected, the resulting structures consisting of larger grains and nano-particles of the same phase. The implanted samples displayed higher electrical resistivity, presumably due to a higher concentration of point defects and the presence of nano-particles. In Al/Ti and AlN/TiN multilayers irradiated with Ar ions, the as-deposited structures exhibit well-defined, isolated polycrystalline Al and Ti, or AlN and TiN layers, with sharp interfaces. In the metallic system ion irradiation induced interface mixing which progressed with increasing the ion fluence. Mixing was most pronounced at the interfaces that are located around the projected ion range. The multilayered structure was essentially preserved, but the implanted samples exhibit much larger crystal grains. Also, the formation of lamellar columns stretching over a number of individual layers was observed. The AlN/TiN multilayered structures exhibited no measurable interface mixing on Ar irradiation, attributable to the nature of interatomic bonding and to mutual immiscibility of AlN and TiN. High fluence nitrogen ion irradiation of Al/Ti multilayers results in both the introduction of nitrogen into the structures as well as a high level of their intermixing. A

  20. Ion beam generation and focusing

    International Nuclear Information System (INIS)

    Miller, P.A.; Mendel, C.W.; Swain, D.W.; Goldstein, S.A.

    1975-01-01

    Calculations have shown that efficiently generated and focused ion beams could have significant advantages over electron beams in achieving ignition of inertially-confined thermonuclear fuel. Efficient ion beam generation implies use of a good ion source and suppression of net electron current. Net electron flow can be reduced by allowing electrons to reflex through a highly transparent anode or by use of transverse magnetic fields (either beam self-fields or externally applied fields). Geometric focusing can be achieved if the beam is generated by appropriately shaped electrodes. Experimental results are presented which demonstrate ion beam generation in both reflexing and pinched-flow diodes. Spherically shaped electrodes are used to concentrate a proton beam, and target response to proton deposition is studied

  1. Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Department of Physics, Wuhan University (China); Maekawa, M.; Kawasuso, A.; Naramoto, H. [Advanced Science Research Center, Japan Atomic Energy Agency, Takasaki, Gunma (Japan)

    2007-07-01

    In this work, we implanted B{sup +}, O{sup +}, Al{sup +}, and P{sup +} ions into ZnO with energy of 50-380 keV and total doses of 4 x 10{sup 15} cm{sup -2} for each ion. The implantation-induced defects and their thermal recovery were studied using a slow positron beam. Vacancy clusters are produced in all the implanted samples. It is found that the thermal recovery of these vacancies induced by different ions shows much difference. In case of B{sup +} and Al{sup +}-implantation, the vacancy clusters agglomerate to much larger size and might evolve to microvoids during annealing. However, for O{sup +} and P{sup +} ions, which are heavier than B{sup +} and Al{sup +}, the vacancies show a much weaker agglomeration process. The mechanism of such difference is discussed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Measurement of volatile evolution from polyurethane induced by accelerated ion beam irradiation

    International Nuclear Information System (INIS)

    Murphy, J.J.

    2003-01-01

    Irradiation of polymer samples using an accelerated beam of He 2+ ions passed through a 10μm thick window of havar foil has been performed. Such irradiation simulates the effects of large α radiation doses, on a vastly reduced time-scale. Analysis of volatiles evolved during irradiation is performed by a residual gas analyser (RGA), which is located close to the sample chamber. Presented in this paper are the results obtained during a radiation study on polyester/MDI based polyurethane materials. During high dose rate irradiation a number of high mass species were observed. A comparison between two similar polyurethanes formulated with slightly different polyesters indicated some differences. They were, however, too minor to link to specific degradation mechanisms. The dominant degradation products evident to the RGA at low dose rates were H 2 , CO and CO 2 . A series of polyurethane samples previously conditioned by γ irradiation at doses between 0 and 5MGy were irradiated in the ion beam. Identification of differences in trends in the rates of volatile evolution between these samples indicated the precise vacuum conditions at the time of irradiation had a major influence. There was also an indication that the surface of the sample had a small effect on rates of volatile evolution. Comparative plots of CO and CO 2 evolution for a series of 1MGy irradiations indicated variations in behaviour between samples with different γ doses. Evolution during the first 1MGy was inhibited for the unirradiated sample, the extent of inhibition diminished with increasing γ dose and was no longer evident in a sample with 1.5MGy γ dose. H 2 does not show an equivalent inhibition. Evidence for a low dose crosslinking reaction is put forward as a reason for the inhibition. Chemical reaction mechanisms are postulated and used to explain differences in the behaviour observed

  3. Electron beam induced strong organic/inorganic grafting for thermally stable lithium-ion battery separators

    Science.gov (United States)

    Choi, Yunah; Kim, Jin Il; Moon, Jungjin; Jeong, Jongyeob; Park, Jong Hyeok

    2018-06-01

    A tailored interface between organic and inorganic materials is of great importance to maximize the synergistic effects from hybridization. Polyethylene separators over-coated with inorganic thin films are the state-of-the art technology for preparing various secondary batteries with high safety. Unfortunately, the organic/inorganic hybrid separators have the drawback of a non-ideal interface, thus causing poor thermal/dimensional stability. Here, we report a straightforward method to resolve the drawback of the non-ideal interface between vapor deposited SiO2 and polyethylene separators, to produce a highly stable lithium-ion battery separator through strong chemical linking generated by direct electron beam irradiation. The simple treatment with an electron beam with an optimized dose generates thermally stable polymer separators, which may enhance battery safety under high-temperature conditions. Additionally, the newly formed Si-O-C or Si-CH3 chemical bonding enhances electrolyte-separator compatibility and thus may provide a better environment for ionic transport between the cathode and anode, thereby leading to better charge/discharge behaviors.

  4. Vertical Growth of Superconducting Crystalline Hollow Nanowires by He+ Focused Ion Beam Induced Deposition.

    Science.gov (United States)

    Córdoba, Rosa; Ibarra, Alfonso; Mailly, Dominique; De Teresa, José Ma

    2018-02-14

    Novel physical properties appear when the size of a superconductor is reduced to the nanoscale, in the range of its superconducting coherence length (ξ 0 ). Such nanosuperconductors are being investigated for potential applications in nanoelectronics and quantum computing. The design of three-dimensional nanosuperconductors allows one to conceive novel schemes for such applications. Here, we report for the first time the use of a He + focused-ion-beam-microscope in combination with the W(CO) 6 precursor to grow three-dimensional superconducting hollow nanowires as small as 32 nm in diameter and with an aspect ratio (length/diameter) of as much as 200. Such extreme resolution is achieved by using a small He + beam spot of 1 nm for the growth of the nanowires. As shown by transmission electron microscopy, they display grains of large size fitting with face-centered cubic WC 1-x phase. The nanowires, which are grown vertically to the substrate, are felled on the substrate by means of a nanomanipulator for their electrical characterization. They become superconducting at 6.4 K and show large critical magnetic field and critical current density resulting from their quasi-one-dimensional superconducting character. These results pave the way for future nanoelectronic devices based on three-dimensional nanosuperconductors.

  5. Long-term degradation of chemical structures and mechanical properties in polyethylene induced by ion-beam irradiation

    International Nuclear Information System (INIS)

    Oka, T.; Hama, Y.

    2004-01-01

    The long-term degradation in polyethylene irradiated with ion beams was studied. We found the changes of the chemical structures and the mechanical properties with time storage. S-PE has a good resistance to ion-beam irradiation because the crystallinity and density were very low. (author)

  6. Swift heavy ion-beam induced amorphization and recrystallization of yttrium iron garnet

    International Nuclear Information System (INIS)

    Costantini, Jean-Marc; Miro, Sandrine; Beuneu, François; Toulemonde, Marcel

    2015-01-01

    Pure and (Ca and Si)-substituted yttrium iron garnet (Y 3 Fe 5 O 12 or YIG) epitaxial layers and amorphous films on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , or GGG) single crystal substrates were irradiated by 50 MeV 32 Si and 50 MeV (or 60 MeV) 63 Cu ions for electronic stopping powers larger than the threshold value (∼4 MeV μm −1 ) for amorphous track formation in YIG crystals. Conductivity data of crystalline samples in a broad ion fluence range (10 11 –10 16 cm −2 ) are modeled with a set of rate equations corresponding to the amorphization and recrystallization induced in ion tracks by electronic excitations. The data for amorphous layers confirm that a recrystallization process takes place above ∼10 14 cm −2 . Cross sections for both processes deduced from this analysis are discussed in comparison to previous determinations with reference to the inelastic thermal-spike model of track formation. Micro-Raman spectroscopy was also used to follow the related structural modifications. Raman spectra show the progressive vanishing and randomization of crystal phonon modes in relation to the ion-induced damage. For crystalline samples irradiated at high fluences (⩾10 14 cm −2 ), only two prominent broad bands remain like for amorphous films, thereby reflecting the phonon density of states of the disordered solid, regardless of samples and irradiation conditions. The main band peaked at ∼660 cm −1 is assigned to vibration modes of randomized bonds in tetrahedral (FeO 4 ) units. (paper)

  7. Preliminary results on time-resolved ion beam induced luminescence applied to the provenance study of lapis lazuli

    Energy Technology Data Exchange (ETDEWEB)

    Czelusniak, C. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Dipartimento di Fisica e Astronomia, Università di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Palla, L. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Pisa and Università di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Massi, M. [Dipartimento di Fisica e Astronomia, Università di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Carraresi, L.; Giuntini, L. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Dipartimento di Fisica e Astronomia, Università di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Re, A.; Lo Giudice, A. [Dipartimento di Fisica, Università di Torino & INFN Sezione di Torino, Via Giuria 1, 10125 Torino (Italy); Pratesi, G. [Museo di Storia Naturale, Università di Firenze, Via G. La Pira 4, 50121 Firenze (Italy); Mazzinghi, A. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Dipartimento di Fisica e Astronomia, Università di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Ruberto, C. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Dipartimento di Chimica, Università di Firenze, Via della Lastruccia 1, 50019 Sesto Fiorentino, Firenze (Italy); Castelli, L. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); and others

    2016-03-15

    This work will present preliminary results concerning the use of time-resolved ion beam induced luminescence applied to provenance studies of lapis lazuli. Measurements were performed at the pulsed beam facility at LABEC laboratory in Florence. Lapis lazuli is a semi-precious gemstone, used as ornament since the early civilizations that can be found in few places on Earth. The importance of this work lies in understanding the origin of various samples of lapis lazuli, from which it may be possible to gain insight into trade routes from ancient times. The samples studied in this work originated from Chile, Afghanistan, Tajikistan, Myanmar, and Siberia. The stones were irradiated with 3 MeV protons and the resulting luminescence was detected by a photomultiplier tube, whose output was acquired using a sampling digitizer VME module (CAEN/V1720). Wavelength discrimination was performed at 430 nm utilizing a range of beam currents. The results showed that, by changing the beam current intensity, one can study different features of lapis lazuli, and this may aid in distinguishing lapis lazuli from different provenances.

  8. Preliminary results on time-resolved ion beam induced luminescence applied to the provenance study of lapis lazuli

    International Nuclear Information System (INIS)

    Czelusniak, C.; Palla, L.; Massi, M.; Carraresi, L.; Giuntini, L.; Re, A.; Lo Giudice, A.; Pratesi, G.; Mazzinghi, A.; Ruberto, C.; Castelli, L.

    2016-01-01

    This work will present preliminary results concerning the use of time-resolved ion beam induced luminescence applied to provenance studies of lapis lazuli. Measurements were performed at the pulsed beam facility at LABEC laboratory in Florence. Lapis lazuli is a semi-precious gemstone, used as ornament since the early civilizations that can be found in few places on Earth. The importance of this work lies in understanding the origin of various samples of lapis lazuli, from which it may be possible to gain insight into trade routes from ancient times. The samples studied in this work originated from Chile, Afghanistan, Tajikistan, Myanmar, and Siberia. The stones were irradiated with 3 MeV protons and the resulting luminescence was detected by a photomultiplier tube, whose output was acquired using a sampling digitizer VME module (CAEN/V1720). Wavelength discrimination was performed at 430 nm utilizing a range of beam currents. The results showed that, by changing the beam current intensity, one can study different features of lapis lazuli, and this may aid in distinguishing lapis lazuli from different provenances.

  9. Ion-beam-induced topography and compositional changes in depth profiling

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.

    1992-01-01

    When energetic ions penetrate and stop in solids they not only add a new atomic constituent to the matrix but they also create atomic recoils and defects. The fluxes of these entities can give rise to spatial redistribution of atomic components, which may be partly or completely balanced by reordering and relaxation processes. These latter, in turn, may be influenced by fields and gradients induced by the primary relocation processes and by the energy deposited. These will include quasi-thermal, concentration (or chemical potential) and electrostatic gradients and may act to enhance or suppress atomic redistribution. Some, or all, of these processes will operate, depending upon the system under study, when energetic ions are employed to sputter erode a substrate for depth sectioning and, quite generally, can perturb the atomic depth profile that it is intended to evaluate. Theoretical and computational approaches to modelling such processes will be outlined and experimental examples shown which illustrate specific phenomena. In particular the accumulation of implant species and defect generation or redistribution can modify, with increasing ion fluence, the local sputtering mechanism and create further problems in depth profile analysis as a changing surface topography penetrates the solid. Examples of such topographic evolution and its influence on depth profiling analysis will be given and models to explain general and specific behaviour will be outlined. The commonality of models which examine both depth-dependent composition modification and surface topography evolution will be stressed. (author)

  10. Electrohydrodynamic emitters of ion beams

    International Nuclear Information System (INIS)

    Dudnikov, V.G.; Shabalin, A.L.

    1990-01-01

    Physical processes determining generation of ion beams with high emission current density in electrohydrodynamic emitters are considered. Electrohydrodynamic effects developing in ion emission features and kinetics of ion interaction in beams with high density are discussed. Factors determining the size of the emission zone, emission stability at high and low currents, cluster generation, increase of energy spread and decrease of brightness are analyzed. Problems on practical provision of stable EHD emitter functioning are considered. 94 refs.; 8 figs.; 1 tab

  11. Cellular radiobiology of heavy-ion beams

    International Nuclear Information System (INIS)

    Tobias, C.A.; Blakely, E.A.; Ngo, F.Q.H.; Roots, R.J.; Yang, T.C.

    1981-01-01

    Progress is reported in the following areas of this research program: relative biological effectiveness and oxygen enhancement ratio of silicon ion beams; heavy ion effects on the cell cycle; the potentiation effect (2 doses of high LET heavy-ion radiations separated by 2 to 3 hours); potentially lethal damage in actively growing cells and plateau growth cells; radiation induced macromolecular lesions and cellular radiation chemistry; lethal effects of dual radiation; and the development of a biophysical repair/misrepair model

  12. Mutation induction by ion beams in arabidopsis

    International Nuclear Information System (INIS)

    Tanaka, Atsushi

    1999-01-01

    An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M 1 lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by γirradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and γ-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

  13. Mutation induction by ion beams in arabidopsis

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1999-07-01

    An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M{sub 1} lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by {gamma}irradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and {gamma}-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

  14. Influence of ion beam irradiation induced defects on the structural, optical and electrical properties of tellurium nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Narinder [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Department of Physics, Haryana College of Technology & Management, Kaithal, 136027 (India); Kumar, Rajesh [Department of Physics, RN College of Engineering & Technology, Madlauda, 132104 (India); Kumar, Sushil, E-mail: sushil_phys@rediffmail.com [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Chakarvarti, S.K. [Research and Development, Manav Rachana International University, Faridabad, 121001 (India)

    2016-11-01

    In this study, tellurium nanowires were electrodeposited into the polymer membranes from aqueous acidic bath containing HTeO{sub 2}{sup +} ions. The field emission scanning electron microscopy (FESEM) images confirmed the formation of uniform and straight nanowires. The influence of 110 MeV Ni{sup 8+} ion irradiation induced defects on the structural, optical and electrical properties of as–deposited tellurium nanowires were examined using X-ray diffraction (XRD), UV–visible absorption spectroscopy and current–voltage (I–V) measurements. The XRD data depicted the hexagonal phase of tellurium nanowires and further revealed a variation in the intensity of diffraction peaks of ion irradiated nanowires. Williamson–Hall (WH) analysis is used for convoluting the size and microstrain contributions to the width of diffraction peaks. Tellurium nanowires exhibited a distinct absorbance band in the visible region at 686 nm, while this was absent in bulk tellurium. Electrical properties of nanowires are explored on the basis of I–V curves, which revealed a significant increase in the electrical conductivity of irradiated nanowires. A possible mechanism for the enhanced electrical conductivity is the increase in carrier concentration due to thermally excited defects. The defects produced by ion irradiation play a vital role in modifying the properties of semiconducting nanowires. - Highlights: • 110 MeV Ni{sup 8+} ion beam induced changes in tellurium nanowires have been examined. • Nanowires were prepared using template electrodeposition method. • Irradiation improved the electrical conductivity of tellurium nanowires. • Mechanism for enhanced electrical conductivity of irradiated nanowires was discussed.

  15. Abaca/polyester nonwoven fabric functionalization for metal ion adsorbent synthesis via electron beam-induced emulsion grafting

    International Nuclear Information System (INIS)

    Madrid, Jordan F.; Ueki, Yuji; Seko, Noriaki

    2013-01-01

    A metal ion adsorbent was developed from a nonwoven fabric trunk material composed of both natural and synthetic polymers. A pre-irradiation technique was used for emulsion grafting of glycidyl methacrylate (GMA) onto an electron beam irradiated abaca/polyester nonwoven fabric (APNWF). The dependence of degree of grafting (Dg), calculated from the weight of APNWF before and after grafting, on absorbed dose, reaction time and monomer concentration were evaluated. After 50 kGy irradiation with 2 MeV electron beam and subsequent 3 h reaction with an emulsion consisting of 5% GMA and 0.5% polyoxyethylene sorbitan monolaurate (Tween 20) surfactant in deionized water at 40 °C, a grafted APNWF with a Dg greater than 150% was obtained. The GMA-grafted APNWF was further modified by reaction with ethylenediamine (EDA) in isopropyl alcohol at 60 °C to introduce amine functional groups. After a 3 h reaction with 50% EDA, an amine group density of 2.7 mmole/gram adsorbent was achieved based from elemental analysis. Batch adsorption experiments were performed using Cu 2+ and Ni 2+ ions in aqueous solutions with initial pH of 5 at 30 °C. Results show that the adsorption capacity of the grafted adsorbent for Cu 2+ is four times higher than Ni 2+ ions. - Highlights: • An amine type adsorbent from abaca/polyester nonwoven fabric was synthesized. • Pre-irradiation method was used in grafting glycidyl methacrylate on nonwoven fabric. • Radiation-induced grafting was performed with monomer in emulsion state. • The calculated adsorption capacity for Cu 2+ is four times higher than Ni 2+ ions. • Grafted adsorbent can remove Cu 2+ faster than a chemically similar commercial resin

  16. Beam-loss induced pressure rise of Large Hadron Collider collimator materials irradiated with 158 GeV/u $In^{49+}$ ions at the CERN Super Proton Synchrotron

    CERN Document Server

    Mahner, Edgar; Hansen, Jan; Page, Eric; Vincke, H

    2004-01-01

    During heavy ion operation, large pressure rises, up to a few orders of magnitude, were observed at CERN, GSI, and BNL. The dynamic pressure rises were triggered by lost beam ions that impacted onto the vacuum chamber walls and desorbed about 10/sup 4/ to 10/sup 7/ molecules per ion. The deterioration of the dynamic vacuum conditions can enhance charge-exchange beam losses and can lead to beam instabilities or even to beam abortion triggered by vacuum interlocks. Consequently, a dedicated measurement of heavy-ion induced molecular desorption in the GeV/u energy range is important for Large Hadron Collider (LHC) ion operation. In 2003, a desorption experiment was installed at the super proton synchrotron to measure the beam-loss induced pressure rise of potential LHC collimator materials. Samples of bare graphite, sputter coated (Cu, TiZrV) graphite, and 316 LN (low carbon with nitrogen) stainless steel were irradiated under grazing angle with 158 GeV/u indium ions. After a description of the new experimental ...

  17. Beam-Loss Induced Pressure Rise of LHC Collimator Materials Irradiated with 158 GeV/u $In^{49+}$ Ions at the CERN SPS

    CERN Document Server

    Mahner, Edgar; Hansen, Jan; Page, Eric; Vincke, Helmut H

    2004-01-01

    During heavy ion operation, large pressure rises, up to a few orders of magnitude, were observed at CERN, GSI, and BNL. The dynamic pressure rises were triggered by lost beam ions that impacted onto the vacuum chamber walls and desorbed about 1044 to 107 molecules per ion. The deterioration of the dynamic vacuum conditions can enhance charge-exchange beam losses and can lead to beam instabilities or even to beam abortion triggered by vacuum interlocks. Consequently, a dedicated measure-ment of heavy-ion induced molecular desorption in the GeV/u energy range is important for LHC ion operation. In 2003, a desorption experiment was installed at the SPS to measure the beam-loss induced pressure rise of potential LHC collimator materials. Samples of bare graphite, sputter coated (Cu, TiZrV) graphite, and 316 LN stainless steel, were irradiated under grazing angle with 158 GeV/u indium ions. After a description of the new experimental set-up, the results of the pressure rise measurements are presented, and the deri...

  18. Intense beams of light ions

    International Nuclear Information System (INIS)

    Camarcat, Noel

    1985-01-01

    Results of experiments performed in order to accelerate intense beams of light and heavier ions are presented. The accelerating diodes are driven by existing pulsed power generators. Optimization of the generator structure is described in chapter I. Nuclear diagnostics of the accelerated light ion beams are presented in chapter II. Chapter III deals with the physics of intense charged particle beams. The models developed are applied to the calculation of the performances of the ion diodes described in the previous chapters. Chapter IV reports preliminary results on a multiply ionized carbon source driven by a 0.1 TW pulsed power generator. (author) [fr

  19. Diffusion-induced grain boundary migration during ion beam mixing of Au/Cu bilayers

    International Nuclear Information System (INIS)

    Alexander, D.E.; Baldo, P.M.; Rehn, L.E.

    1992-09-01

    Experiments were performed to evaluate the effect of 1.5 MeV Kr irradiation on diffusion-induced grain boundary migration (DIGM) in Au/Cu bilayers in the temperature range of 300≤T≤050K. The experimental results were consistent with DIGM occurring in bilayers both during irradiation and during annealing treatments. Rutherford backscattering spectrometry showed a nearly uniform distribution of Cu present through the entire thickness of appropriately prepared polycrystalline Au films irradiated or annealed at temperatures ≥400K. No parallel effect was seen in similarly treated single-crystal films. In each polycrystalline sample studied, irradiation resulted in greater amounts of Cu present uniformly in the Au compared to annealing-only. The magnitudes of measured Cu compositions were substantially greater than that expected solely from grain boundary diffusion. A simple analysis of the process indicated that ion irradiation affects DIGM by increasing the composition of Cu present in alloyed zones and/or by increasing the grain boundary velocity in the Au

  20. A new Arabidopsis mutant induced by ion beams affects flavonoid synthesis with spotted pigmentation in testa

    International Nuclear Information System (INIS)

    Tanaka, A.; Tano, S.; Chantes, T.; Yokota, Y.; Shikazono, N.; Watanabe, H.

    1997-01-01

    A new stable mutant of Arabidopsis thaliana with a spotted pigment in the seed coat, named anthocyanin spotted testa (ast), was induced by carbon ion irradiation. The spotted pigmentation of ast mutant was observed in immature seeds from 1-2 days after flowering (DAF), at the integument of the ovule, and spread as the seed coat formed. Anthocyanin accumulation was about 6 times higher in ast mutant than in the wild-type at 6 DAF of the immature seeds, but was almost the same in mature dry seeds. A higher anthocyanin accumulation was not observed in the seedlings, leaves or floral buds of ast mutant compared with the wild-type, which suggests that a high accumulation of anthocyanins is specific to the seed coat of the immature ast seeds. Reciprocal crosses between ast mutant and the wild-type indicated that ast is a single recessive gene mutation and segregates as a delayed inheritance. The results of crossing with tt7 and ttg mutants also confirmed that the AST gene is probably a regulatory locus that controls flavonoid biosynthesis. A mapping analysis revealed that the gene is located on chromosome I and is closely linked to the SSLP DNA marker nga280 with a distance of 3.2 cM. AST has been registered as a new mutant of Arabidopsis

  1. Intense electron and ion beams

    CERN Document Server

    Molokovsky, Sergey Ivanovich

    2005-01-01

    Intense Ion and Electron Beams treats intense charged-particle beams used in vacuum tubes, particle beam technology and experimental installations such as free electron lasers and accelerators. It addresses, among other things, the physics and basic theory of intense charged-particle beams; computation and design of charged-particle guns and focusing systems; multiple-beam charged-particle systems; and experimental methods for investigating intense particle beams. The coverage is carefully balanced between the physics of intense charged-particle beams and the design of optical systems for their formation and focusing. It can be recommended to all scientists studying or applying vacuum electronics and charged-particle beam technology, including students, engineers and researchers.

  2. Carbon ion beam is more effective to induce cell death in sphere-type A172 human glioblastoma cells compared with X-rays.

    Science.gov (United States)

    Takahashi, Momoko; Hirakawa, Hirokazu; Yajima, Hirohiko; Izumi-Nakajima, Nakako; Okayasu, Ryuichi; Fujimori, Akira

    2014-12-01

    To obtain human glioblastoma cells A172 expressing stem cell-related protein and comparison of radiosensitivity in these cells with X-rays and carbon beam. Human monolayer-type A172 glioblastoma cells were maintained in normal medium with 10% bovine serum. In order to obtain sphere-type A172 cells the medium was replaced with serum-free medium supplemented with growth factors. Both types of A172 cells were irradiated with either X-rays or carbon ion beams and their radiosensitivity was evaluated. Serum-free medium induced expression of stem cell-related proteins in A172 cells along with the neurosphere-like appearance. These sphere-type cells were found resistant to both X-rays and carbon ion beams. Phosphorylation of histone H2A family member X persisted for a longer period in the cells exposed to carbon ion beams than in those exposed to X-rays and it disappeared quicker in the sphere type than in the monolayer type. Relative radioresistance of the sphere type cells was smaller for carbon ion beams than for X-rays. We demonstrated that glioblastoma A172 cells with induced stem cell-related proteins turned resistant to irradiation. Accelerated heavy ion particles may have advantage over X-rays in overcoming the tumor resistance due to cell stemness.

  3. Ion beam stabilization in ion implantation equipment

    International Nuclear Information System (INIS)

    Pina, L.

    1973-01-01

    The results are presented of experimental efforts aimed at ion beam current stabilization in an equipment for ion implantation in solids. The related problems of power supplies are discussed. Measured characteristics of laboratory equipment served the determination of the parameters to be required of the supplies as well as the design and the construction of the supplies. The respective wiring diagram is presented. (J.K.)

  4. Control of colliding ion beams

    International Nuclear Information System (INIS)

    Salisbury, W.W.

    1985-01-01

    This invention relates to a method and system for enhancing the power-producing capability of a nuclear fusion reactor, and more specifically to methods and structure for enhancing the ion density in a directed particle fusion reactor. In accordance with the invention, oppositely directed ion beams constrained to helical paths pass through an annular reaction zone. The object is to produce fusion reactions due to collisions between the ion beams. The reaction zone is an annulus as between an inner-cylindrical electrode and an outer-cylindrical coaxial electrode. The beams are enhanced in ion density at spaced points along the paths by providing spline structures protruding from the walls of the electrodes into the reaction zone. This structure causes variations in the electric field along the paths followed by the ion beams. Such fields cause the beams to be successively more and less concentrated as the beams traverse the reaction zone. Points of high concentration are the points at which fusion-producing collisions are most likely to take place

  5. Ion beams in materials processing and analysis

    CERN Document Server

    Schmidt, Bernd

    2012-01-01

    This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.

  6. Beam induced RF heating

    CERN Document Server

    Salvant, B; Arduini, G; Assmann, R; Baglin, V; Barnes, M J; Bartmann, W; Baudrenghien, P; Berrig, O; Bracco, C; Bravin, E; Bregliozzi, G; Bruce, R; Bertarelli, A; Carra, F; Cattenoz, G; Caspers, F; Claudet, S; Day, H; Garlasche, M; Gentini, L; Goddard, B; Grudiev, A; Henrist, B; Jones, R; Kononenko, O; Lanza, G; Lari, L; Mastoridis, T; Mertens, V; Métral, E; Mounet, N; Muller, J E; Nosych, A A; Nougaret, J L; Persichelli, S; Piguiet, A M; Redaelli, S; Roncarolo, F; Rumolo, G; Salvachua, B; Sapinski, M; Schmidt, R; Shaposhnikova, E; Tavian, L; Timmins, M; Uythoven, J; Vidal, A; Wenninger, J; Wollmann, D; Zerlauth, M

    2012-01-01

    After the 2011 run, actions were put in place during the 2011/2012 winter stop to limit beam induced radio frequency (RF) heating of LHC components. However, some components could not be changed during this short stop and continued to represent a limitation throughout 2012. In addition, the stored beam intensity increased in 2012 and the temperature of certain components became critical. In this contribution, the beam induced heating limitations for 2012 and the expected beam induced heating limitations for the restart after the Long Shutdown 1 (LS1) will be compiled. The expected consequences of running with 25 ns or 50 ns bunch spacing will be detailed, as well as the consequences of running with shorter bunch length. Finally, actions on hardware or beam parameters to monitor and mitigate the impact of beam induced heating to LHC operation after LS1 will be discussed.

  7. Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

    Science.gov (United States)

    Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

    2018-06-01

    Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

  8. The toroidicity-induced Alfven eigenmode structure in DIII-D: Implications of soft x-ray and beam-ion loss data

    International Nuclear Information System (INIS)

    Carolipio, E. M.; Heidbrink, W. W.; Cheng, C. Z.; Chu, M. S.; Fu, G. Y.; Jaun, A.; Spong, D. A.; Turnbull, A. D.; White, R. B.

    2001-01-01

    The internal structure of the toroidicity-induced Alfven eigenmode (TAE) is studied by comparing soft x-ray profile and beam ion loss data taken during TAE activity in the DIII-D tokamak [W. W. Heidbrink , Nucl. Fusion 37, 1411 (1997)] with predictions from theories based on ideal magnetohydrodynamic (MHD), gyrofluid, and gyrokinetic models. The soft x-ray measurements indicate a centrally peaked eigenfunction, a feature which is closest to the gyrokinetic model's prediction. The beam ion losses are simulated using a guiding center code. In the simulations, the TAE eigenfunction calculated using the ideal MHD model acts as a perturbation to the equilibrium field. The predicted beam ion losses are an order of magnitude less than the observed ∼6%--8% losses at the peak experimental amplitude of {delta}B r /B 0 ≅2--5 x 10 -4

  9. Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

    OpenAIRE

    Fedorenko, Yanina G.

    2017-01-01

    Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. Owing to excellent controllability, uniformity, and the dose insensitive relative acc...

  10. Enhanced light trapping by focused ion beam (FIB) induced self-organized nanoripples on germanium (100) surface

    Science.gov (United States)

    Kamaliya, Bhaveshkumar; Mote, Rakesh G.; Aslam, Mohammed; Fu, Jing

    2018-03-01

    In this paper, we demonstrate enhanced light trapping by self-organized nanoripples on the germanium surface. The enhanced light trapping leading to high absorption of light is confirmed by the experimental studies as well as the numerical simulations using the finite-difference time-domain method. We used gallium ion (Ga+) focused ion beam to enable the formation of the self-organized nanoripples on the germanium (100) surface. During the fabrication, the overlap of the scanning beam is varied from zero to negative value and found to influence the orientation of the nanoripples. Evolution of nanostructures with the variation of beam overlap is investigated. Parallel, perpendicular, and randomly aligned nanoripples with respect to the scanning direction are obtained via manipulation of the scanning beam overlap. 95% broadband absorptance is measured in the visible electromagnetic region for the nanorippled germanium surface. The reported light absorption enhancement can significantly improve the efficiency of germanium-silicon based photovoltaic systems.

  11. Intense heavy ion beam-induced temperature effects in carbon-based stripper foils

    International Nuclear Information System (INIS)

    Kupka, K.; Tomut, M.; Simon, P.; Hubert, C.; Romanenko, A.; Lommel, B.; Trautmann, C.

    2015-01-01

    At the future FAIR facility, reliably working solid carbon stripper foils are desired for providing intermediate charge states to SIS18. With the expected high beam intensities, the foils experience enhanced degradation and limited lifetime due to severe radiation damage, stress waves, and thermal effects. This work presents systematic measurements of the temperature of different carbon-based stripper foils (amorphous, diamond-like, and carbon-nanotube based) exposed to 4.8 MeV/u U, Bi, and Au beams of different pulse intensities. Thermal and spectroscopic analyses were performed by means of infrared thermography and Fourier transform infrared spectroscopy. The resulting temperature depends on the foil thickness and strongly increases with increasing pulse intensity and repetition rate. (author)

  12. Surrey Ion Beam Centre: the EPSRC MRF for ion beam applications - 01002

    International Nuclear Information System (INIS)

    Webb, R.P.

    2016-01-01

    The SIBC (Surrey Ion Beam Centre) is an element of the Virtual Ion Beam Centre that coordinates 3 U.K. experimental facilities: SIBC (University of Surrey) for implantation and ion beam applications, Miami and MEIS facility (University of Huddersfield) and gamma ray and neutron irradiation emulation facility (University of Manchester). The SIBC works actively with industry, developing bespoke processes and services, particularly for the photonics industry and provides ion beam facilities to about 20 companies across the world. It operates a stringent quality control program and is one of the few ion beam laboratories in the world to operate under ISO 9001 certification. The equipment of SIBC is presented and some applications of ion beam analysis concerning the identification of gunshot residues, the determination of the origin of a painting, the analysis of proteins are described. Different techniques such as PIXE (Particle Induced X-ray Emission), RBS (Rutherford Backscattering Spectroscopy), NRA (Nuclear Reaction Analysis), SIMS (Secondary Ion Mass Spectrometry) are also explained in the slides of the presentation that have been added at the end of the paper

  13. High-energy ion-beam-induced phase separation in SiOx films

    International Nuclear Information System (INIS)

    Arnoldbik, W.M.; Tomozeiu, N.; Hattum, E.D. van; Lof, R.W.; Vredenberg, A.M.; Habraken, F.H.P.M.

    2005-01-01

    The modification of the nanostructure of silicon suboxide (SiO x ) films as a result of high-energy heavy-ion irradiation has been studied for the entire range 0.1≤x x films have been obtained by radio-frequency magnetron sputter deposition. For 50 MeV 63 Cu 8+ ions and an angle of incidence of 20 deg. with the plane of the surface, and for x≥0.5, it takes a fluence of about 10 14 /cm 2 to reach a Si-O-Si infrared absorption spectrum, which is supposed to be characteristic for a Si-SiO 2 composite film structure. For smaller x values, it takes a much larger fluence. The interpretation of the IR spectra is corroborated for the surface region by results from x-ray photoelectron spectroscopy. The results present evidence for a mechanism, in which the phase separation takes place in the thermal spike, initiated by the energy deposited in many overlapping independent ion tracks. Such a process is possible since the suboxides fulfill the conditions for spinodal decomposition

  14. Maskless, resistless ion beam lithography

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Qing [Univ. of California, Berkeley, CA (United States)

    2003-01-01

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O2+, BF2+, P+ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF2+, over 90% of O2+ and P+ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He+ beam is as high as 440 A/cm2 • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O2+ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O2+ ions with the dose of 1015 cm-2. The oxide can then serve as a hard mask for patterning of the Si film. The

  15. Maskless, resistless ion beam lithography

    International Nuclear Information System (INIS)

    Ji, Qing

    2003-01-01

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O 2 + , BF 2 + , P + etc., for surface modification and doping applications. With optimized source condition, around 85% of BF 2 + , over 90% of O 2 + and P + have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He + beam is as high as 440 A/cm 2 · Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O 2 + ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O 2 + ions with the dose of 10 15 cm -2 . The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P

  16. Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

    International Nuclear Information System (INIS)

    Fernandez-Pacheco, A.; Ibarra, M. R.; De Teresa, J. M.; Cordoba, R.

    2009-01-01

    We present a study of the transport properties of Pt-C nanowires created by focused-ion-beam (FIB)-induced deposition. By means of the measurement of the resistance while the deposit is being performed, we observe a progressive decrease in the nanowire resistivity with thickness, changing from 10 8 μΩ cm for thickness ∼20 nm to a lowest saturated value of 700 μΩ cm for thickness >150 nm. Spectroscopy analysis indicates that this dependence on thickness is caused by a gradient in the metal-carbon ratio as the deposit is grown. We have fabricated nanowires in different ranges of resistivity and studied their conduction mechanism as a function of temperature. A metal-insulator transition as a function of the nanowire thickness is observed. The results will be discussed in terms of the Mott-Anderson theory for noncrystalline materials. An exponential decrease in the conductance with the electric field is found for the most resistive samples, a phenomenon understood by the theory of hopping in lightly doped semiconductors under strong electric fields. This work explains the important discrepancies found in the literature for Pt-C nanostructures grown by FIB and opens the possibility to tune the transport properties of this material by an appropriate selection of the growth parameters.

  17. High energy ion beam induced modifications in diamond and diamond like carbon thin films

    International Nuclear Information System (INIS)

    Dilawar, N.; Sah, S.; Mehta, B.R.; Vankar, V.D.

    1996-01-01

    Diamond and DLC films deposited using hot-filament chemical vapour deposition technique at various parameters were irradiated with 50 MeV Si 4+ ions. The resulting microstructural changes were studied using X-ray diffraction and scanning electron microscopy. All the samples showed the development of β-SiC and hexagonal carbon phases at the expense of the diamond/DLC phase. The ERD analysis was carried out to determine the hydrogen concentration and its distribution in DLC films. The absolute hydrogen concentration in DLC samples is of the order of 10 22 atoms/cm 3 which gets depleted on irradiation. The DLC samples show a clear dependence of hydrogen content on the deposition parameters. (author)

  18. Temperature dependence of ion-beam induced amorphization in α-quartz

    International Nuclear Information System (INIS)

    Dhar, Sankar; Bolse, Wolfgang; Lieb, Klaus-Peter

    1999-01-01

    The temperature dependence of the amorphization in α-quartz by Ne-ion bombardment has been investigated using Rutherford Backscattering Spectrometry in channeling geometry (RBS-C). The experimental results show that the critical temperature T c for inhibiting amorphization in quartz is around 940 K. The damage depth profile χ(z,phi) is independent of the temperature and fluence and can be simulated with a power-law function [χ(z,phi)∝(phiF D (z)) 3 ] of the damage energy distribution F D (z). At low irradiation temperature, the critical dose phi c for amorphization is independent of the temperature but it strongly increases at higher temperatures with an activation energy of 0.28 eV and has been explained by out-diffusion model of Morehead and Crowder

  19. Biological effect of penetration controlled irradiation with ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi; Shimizu, Takashi; Kikuchi, Masahiro; Kobayashi, Yasuhiko; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Yamashita, Takao

    1997-03-01

    To investigate the effect of local irradiation with ion beams on biological systems, technique for penetration controlled irradiation has been established. The range in a target was controlled by changing the distance from beam window in the atmosphere, and could be controlled linearly up to about 31 {mu}m in biological material. In addition, the effects of the penetration controlled irradiations with 1.5 MeV/u C and He ions were examined using tobacco pollen. The increased frequency of leaky pollen produced by ion beams suggests that the efficient pollen envelope damages would be induced at the range-end of ion beams. (author)

  20. Nanostructuring by ion beam

    International Nuclear Information System (INIS)

    Valbusa, U.; Boragno, C.; Buatier de Mongeot, F.

    2003-01-01

    In metals, the surface curvature dependence of the sputtering yield and the presence of an extra energy barrier whenever diffusing adatoms try to descend step edges, produce a similar surface instability, which builds up regular patterns. By tuning the competition between these two mechanisms, it is possible to create self-organized structures of the size of few nanometers. Height, lateral distance and order of the structures change with the deposition parameters like ion energy, dose, incident angle and substrate temperature. The paper offers an overview of the experiments carried out and foresees possible applications of these results in the area of material science

  1. Materials Science with Ion Beams

    CERN Document Server

    Bernas, Harry

    2010-01-01

    This book introduces materials scientists and designers, physicists and chemists to the properties of materials that can be modified by ion irradiation or implantation. These techniques can help design new materials or to test modified properties; novel applications already show that ion-beam techniques are complementary to others, yielding previously unattainable properties. Also, ion-beam interactions modify materials at the nanoscale, avoiding the often detrimental results of lithographic or chemical techniques. Here, the effects are related to better-known quasi-equilibrium thermodynamics, and the consequences to materials are discussed with concepts that are familiar to materials science. Examples addressed concern semiconductor physics, crystal and nanocluster growth, optics, magnetism, and applications to geology and biology.

  2. In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, T. [Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Aikoh, K. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Sakamaki, M.; Amemiya, K. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Iwase, A. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

    2015-12-15

    Surface ferromagnetic state of FeRh thin films irradiated with 1 keV Ar ion-beam has been investigated by using soft X-ray Magnetic Circular Dichroism (XMCD). It was revealed that the Fe atoms of the samples were strongly spin-polarized after Ar ion-beam irradiation. Due to its small penetration depth, 1 keV Ar ion-beam irradiation can modify the magnetic state at subsurface of the samples. In accordance with the XMCD sum rule analysis, the main component of the irradiation induced ferromagnetism at the FeRh film surface was to be effective spin magnetic moment, and not to be orbital moment. We also confirmed that the surface ferromagnetic state could be produced by thermal annealing of the excessively ion irradiated paramagnetic subsurface of the FeRh thin films. This novel magnetic modification technique by using ion irradiation and subsequent annealing can be a potential tool to control the surface magnetic state of FeRh thin films.

  3. Ion-beam Plasma Neutralization Interaction Images

    International Nuclear Information System (INIS)

    Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

    2002-04-01

    Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented

  4. Ion-beam Plasma Neutralization Interaction Images

    Energy Technology Data Exchange (ETDEWEB)

    Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

    2002-04-09

    Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented.

  5. Temperature-dependent ion beam mixing

    International Nuclear Information System (INIS)

    Rehn, L.E.; Alexander, D.E.

    1993-08-01

    Recent work on enhanced interdiffusion rates during ion-beam mixing at elevated temperatures is reviewed. As discussed previously, expected increase in ion-beam mixing rates due to 'radiation-enhanced diffusion' (RED), i.e. the free migration of isolated vacancy and interstitial defects, is well documented in single-crystal specimens in the range of 0.4 to 0.6 of absolute melting temperature. In contrast, the increase often observed at somewhat lower temperatures during ion-beam mixing of polycrystalline specimens is not well understood. However, sufficient evidence is available to show that this increase reflects intracascade enhancement of a thermally-activated process that also occurs without irradiation. Recent evidence is presented which suggests that this process is Diffusion-induced Grain-Boundary Migration (DIGM). An important complementary conclusion is that because ion-beam mixing in single-crystal specimens exhibits no significant temperature dependence below that of RED, models that invoke only irradiation-specific phenomena, e.g., cascade-overlap, thermal-spikes, or liquid-diffusion, and hence which predict no difference in mixing behavior between single- or poly-crystalline specimens, cannot account for the existing results

  6. Ion beam modification of polymers

    International Nuclear Information System (INIS)

    Sofield, C.J.; Sugden, S.; Ing, J.; Bridwell, L.B.; Wang, Y.Q.

    1993-01-01

    The implantation of polymers has received considerable attention in recent years, primarily to examine doping of conducting polymers and to increase the surface conductivity (by many orders of magnitude) of highly insulating polymers. The interest in these studies was partly motivated by possible applications to microelectronic device fabrication. More recently it has been observed that ion implantation can under some conditions lead to the formation of a hard (e.g. as hard as steel, ca. 3 MPa) and conducting surface layer. This paper will review the ion beam modification of polymers resulting from ion implantation with reference to fundamental ion-solid interactions. This leads us to examine whether or not implantation of polymers is a contradiction in terms. (Author)

  7. Size distribution of silver nanoclusters induced by ion, electron, laser beams and thermal treatments of an organometallic precursor

    International Nuclear Information System (INIS)

    D'Urso, L.; Nicolosi, V.; Compagnini, G.; Puglisi, O.

    2004-01-01

    Recently, a huge variety of physical and chemical synthetic processes have been reported to prepare nanostructured materials made of very small (diameter<50 nm) metallic clusters. Depending on the nature of clusters, this new kind of materials posses interesting properties (electronic, optical, magnetic, catalytic) that can be tailored as a function of the particles size and shape. Silver nanoparticles have been obtained by direct thermal treatment or by beam-enhanced decomposition (ion, electron and laser) of a silver organometallic compound (precursor) spinned onto suitable substrates. In this paper, we present the results of a study on the size distribution of such nanoparticles as a function of the different synthesis methods. It was found that the methods employed strongly affect the silver nanoparticles formation. Smaller silver nanoclusters were obtained after reduction by ion beam irradiation and thermal treatment, as observed by using different techniques (AFM, XRD and UV-Vis)

  8. Realization of a scanning ion beam monitor

    International Nuclear Information System (INIS)

    Pautard, C.

    2008-07-01

    During this thesis, a scanning ion beam monitor has been developed in order to measure on-line fluence spatial distributions. This monitor is composed of an ionization chamber, Hall Effect sensors and a scintillator. The ionization chamber set between the beam exit and the experiment measures the ion rate. The beam spot is localized thanks to the Hall Effect sensors set near the beam sweeping magnets. The scintillator is used with a photomultiplier tube to calibrate the ionization chamber and with an imaging device to calibrate the Hall Effect sensors. This monitor was developed to control the beam lines of a radiobiology dedicated experimentation room at GANIL. These experiments are held in the context of the research in hadron-therapy. As a matter of fact, this new cancer treatment technique is based on ion irradiations and therefore demands accurate knowledge about the relation between the dose deposit in biological samples and the induced effects. To be effective, these studies require an on-line control of the fluence. The monitor has been tested with different beams at GANIL. Fluence can be measured with a relative precision of ±4% for a dose rate ranging between 1 mGy/s and 2 Gy/s. Once permanently set on the beam lines dedicated to radiobiology at GANIL, this monitor will enable users to control the fluence spatial distribution for each irradiation. The scintillator and the imaging device are also used to control the position, the spot shape and the energy of different beams such as those used for hadron-therapy. (author)

  9. Light-ion beam for microelectronic applications

    International Nuclear Information System (INIS)

    Hirsch, L.; Tardy, P.; Wantz, G.; Huby, N.; Moretto, P.; Serani, L.; Natali, F.; Damilano, B.; Duboz, J.Y.; Reverchon, J.L.

    2005-01-01

    In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue (λ = 450 nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10 deg. , 25 deg. and 50 deg. ). In a second part of the paper, ion beam induced charges study has been carried out, with a 2 MeV 4 He + micro-beam, on metal-semiconductor-metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes

  10. A specialized bioengineering ion beam line

    International Nuclear Information System (INIS)

    Yu, L.D.; Sangyuenyongpipat, S.; Sriprom, C.; Thongleurm, C.; Suwanksum, R.; Tondee, N.; Prakrajang, K.; Vilaithong, T.; Brown, I.G.; Wiedemann, H.

    2007-01-01

    A specialized bioengineering ion beam line has recently been completed at Chiang Mai University to meet rapidly growing needs of research and application development in low-energy ion beam biotechnology. This beam line possesses special features: vertical main beam line, low-energy (30 keV) ion beams, double swerve of the beam, a fast pumped target chamber, and an in-situ atomic force microscope (AFM) system chamber. The whole beam line is situated in a bioclean environment, occupying two stories. The quality of the ion beam has been studied. It has proved that this beam line has significantly contributed to our research work on low-energy ion beam biotechnology

  11. Transport of intense ion beams

    International Nuclear Information System (INIS)

    Lambertson, G.; Laslett, L.J.; Smith, L.

    1977-01-01

    The possibility of using intense bursts of heavy ions to initiate an inertially confined fusion reaction has stimulated interest in the transport of intense unneutralized heavy ion beams by quadrupole or solenoid systems. This problem was examined in some detail, using numerical integration of the coupled envelope equations for the quadrupole case. The general relations which emerge are used to develop examples of high energy transport systems and as a basis for discussing the limitations imposed by a transport system on achievable intensities for initial acceleration

  12. Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

    Energy Technology Data Exchange (ETDEWEB)

    Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

    2016-01-15

    The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

  13. Materials research with ion beams

    International Nuclear Information System (INIS)

    Meyer, J.D.

    1988-01-01

    This report gives a series of helpful programs which are used in materials research with ion beams. In this context algorithms which can substitute table books are dealt with. This is true for the programs DEDX and PRAL; they are used in order to determine the energy loss of ions in solid bodies, their working range and straggling. Furthermore, simulator routines and analyzers are described. The program TRIM simulates the physical phenomena which occur with the penetration of high-energy ions into solid bodies. In this context electronic excitations, phonons and lattice distortions which are caused by the ions are dealt with. For the experimental ion implantation it is interesting to know the final distribution of the simulated ions in the solid body. The program RBS simulates the Rutherford spectrum of ions which are scattered from a solid body which may consist of up to nine elements and up to one hundred layers. The unknown composition of a solid body can be determined in direct comparison with the experimental spectrum. The program NRA determines concentration and penetrative distribution of an impurity by means of the experimental nuclear reaction spectrum of this impurity. All programs are written in FORTRAN 77. (orig./MM) [de

  14. Ion beam sputter implantation method

    International Nuclear Information System (INIS)

    King, W.J.

    1978-01-01

    By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO 2 , Al 2 O 3 , Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW) [de

  15. Development of focused ion beam systems with various ion species

    International Nuclear Information System (INIS)

    Ji Qing; Leung, K.-N.; King, Tsu-Jae; Jiang Ximan; Appleton, Bill R.

    2005-01-01

    Conventional focused ion beam systems employ a liquid-metal ion source (LMIS) to generate high-brightness beams, such as Ga + beams. Recently there has been an increased need for focused ion beams in areas like biological studies, advanced magnetic-film manufacturing and secondary-ion mass spectroscopy (SIMS). In this article, status of development on focused ion beam systems with ion species such as O 2 + , P + , and B + will be reviewed. Compact columns for forming focused ion beams from low energy (∼3keV), to intermediate energy (∼35keV) are discussed. By using focused ion beams, a SOI MOSFET is fabricated entirely without any masks or resist

  16. Ion beam neutralization with ferroelectrically generated electron beams

    Energy Technology Data Exchange (ETDEWEB)

    Herleb, U; Riege, H [European Organization for Nuclear Research, Geneva (Switzerland). LHC Division

    1997-12-31

    A technique for ion beam space-charge neutralization with pulsed electron beams is described. The intensity of multiply-charged ions produced with a laser ion source can be enhanced or decreased separately with electron beam trains of MHz repetition rate. These are generated with ferroelectric cathodes, which are pulsed in synchronization with the laser ion source. The pulsed electron beams guide the ion beam in a similar way to the alternating gradient focusing of charged particle beams in circular accelerators such as synchrotrons. This new neutralization technology overcomes the Langmuir-Child space-charge limit and may in future allow ion beam currents to be transported with intensities by orders of magnitude higher than those which can be accelerated today in a single vacuum tube. (author). 6 figs., 10 refs.

  17. Ion beam irradiation effects on aromatic polymers

    International Nuclear Information System (INIS)

    Shukushima, Satoshi; Ueno, Keiji

    1995-01-01

    We studied the optical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H + , H 2 + and He + ions. The examined aromatic polymers were polyetherether ketone(PEEK), polyetherimide(PEI), polyether sulfon(PES), polysulfon(PSF), and polyphenylene sulfide(PPS). The optical densities at 300nm of PES and PSF greatly increased after the irradiation. The optical densities at 400nm of all the examined polymer lineally increased with the irradiation dose. The PEEK film which had been irradiated with 1 MeV H + was not deformed above melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the aromatic polymers for the same absorption energy. (author)

  18. A fast beam-ion instability

    Energy Technology Data Exchange (ETDEWEB)

    Stupakov, G V [Stanford Linear Accelerator Center, Menlo Park, CA (United States)

    1996-08-01

    The ionization of residual gas by an electron beam in an accelerator generates ions that can resonantly couple to the beam through a wave propagating in the beam-ion system. Results of the study of a beam-ion instability are presented for a multi-bunch train taking into account the decoherence of ion oscillations due to the ion frequency spread and spatial variation of the ion frequency. It is shown that the combination of both effects can substantially reduce the growth rate of the instability. (author)

  19. Large area ion and plasma beam sources

    Energy Technology Data Exchange (ETDEWEB)

    Waldorf, J. [IPT Ionen- und Plasmatech. GmbH, Kaiserslautern (Germany)

    1996-06-01

    In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.).

  20. Large area ion and plasma beam sources

    International Nuclear Information System (INIS)

    Waldorf, J.

    1996-01-01

    In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.)

  1. Laboratory of ion beam applications at ATOMKI

    International Nuclear Information System (INIS)

    Borbely-Kiss, I.; Huszank, R.; Kertesz, Zs.; Kiss, A.Z.; Koltay, E.; Rajta, I.; Simon, A.; Szabo, Gy.; Szikszai, Z.; Szilasi, S.Z.; Szoboszlai, Z.; Uzonyi, I.

    2008-01-01

    Introduction. The Laboratory of Ion Beam Applications of ATOMKI is devoted to applications of atomic and nuclear physics in the fields of environmental research, biomedicine, geology, materials and surface science (including ion beam induced damage investigations and proton beam lithography) and cultural heritage research. We perform our work in the frame of various projects and collaborations: EU, IAEA, R and D, OTKA, etc. Our laboratory provides service for external (national and international) and internal users and contributes to higher education, as well. The Laboratory is based on the home-made 5 MV Van de Graaff (VdG) electrostatic accelerator of the institute. The accelerator was put into operation in 1971 and in the beginning it supplied ion beams exclusively for nuclear physics. A few years later with the measurements of K-shell ionization cross sections the door became open also for basic atomic physics. In parallel with this basic study, the application of proton induced X-ray emission (PIXE) for the elemental analysis of biological (hair, erythrocyte and blood plasma) samples and atmospheric aerosols also started. The first paper on PIXE, a methodological one, was published in 1978. The experience gained on these applications and later on archaeology led to the construction of complex PIXE chambers, which were sold, together with the corresponding know-how, to institutions in China, Portugal, Bangladesh, Jordan, North Korea, Singapore, Cuba and Mexico through the International Atomic Energy Agency (IAEA). For the evaluation of PIXE spectra the laboratory has been continuously developing its own computer programme package. The first version of this continuous development was published in 1988. In the meantime a second IBA analysis method, the proton induced gamma ray emission (PIGE), was introduced in the laboratory and was applied simultaneously with PIXE. Application of deuteron induced gamma ray emission (DIGE) started more than a decade later. A

  2. Neurosurgical applications of ion beams

    Science.gov (United States)

    Fabrikant, Jacob I.; Levy, Richard P.; Phillips, Mark H.; Frankel, Kenneth A.; Lyman, John T.

    1989-04-01

    The program at Donner Pavilion has applied nuclear medicine research to the diagnosis and radiosurgical treatment of life-threatening intracranial vascular disorders that affect more than half a million Americans. Stereotactic heavy-charged-particle Bragg peak radiosurgery, using narrow beams of heavy ions, demonstrates superior biological and physical characteristics in brain over X-and γ-rays, viz., improved dose distribution in the Bragg peak and sharp lateral and distal borders and less scattering of the beam. Examination of CNS tissue response and alteration of cerebral blood-flow dynamics related to heavy-ion Bragg peak radiosurgery is carried out using three-dimensional treatment planning and quantitative imaging utilizing cerebral angiography, computerized tomography (CT), magnetic resonance imaging (MRI), cine-CT, xenon X-ray CT and positron emission tomography (PET). Also under examination are the physical properties of narrow heavy-ion beams for improving methods of dose delivery and dose distribution and for establishing clinical RBE/LET and dose-response relationships for human CNS tissues. Based on the evaluation and treatment with stereotactically directed narrow beams of heavy charged particles of over 300 patients, with cerebral angiography, CT scanning and MRI and PET scanning of selected patients, plus extensive clinical and neuroradiological followup, it appears that Stereotactic charged-particle Bragg peak radiosurgery obliterates intracranial arteriovenous malformations or protects against rebleeding with reduced morbidity and no mortality. Discussion will include the method of evaluation, the clinical research protocol, the Stereotactic neuroradiological preparation, treatment planning, the radiosurgery procedure and the protocol for followup. Emphasis will be placed on the neurological results, including the neuroradiological and clinical response and early and late delayed injury in brain leading to complications (including vasogenic edema

  3. Abaca/polyester nonwoven fabric functionalization for metal ion adsorbent synthesis via electron beam-induced emulsion grafting

    Science.gov (United States)

    Madrid, Jordan F.; Ueki, Yuji; Seko, Noriaki

    2013-09-01

    A metal ion adsorbent was developed from a nonwoven fabric trunk material composed of both natural and synthetic polymers. A pre-irradiation technique was used for emulsion grafting of glycidyl methacrylate (GMA) onto an electron beam irradiated abaca/polyester nonwoven fabric (APNWF). The dependence of degree of grafting (Dg), calculated from the weight of APNWF before and after grafting, on absorbed dose, reaction time and monomer concentration were evaluated. After 50 kGy irradiation with 2 MeV electron beam and subsequent 3 h reaction with an emulsion consisting of 5% GMA and 0.5% polyoxyethylene sorbitan monolaurate (Tween 20) surfactant in deionized water at 40 °C, a grafted APNWF with a Dg greater than 150% was obtained. The GMA-grafted APNWF was further modified by reaction with ethylenediamine (EDA) in isopropyl alcohol at 60 °C to introduce amine functional groups. After a 3 h reaction with 50% EDA, an amine group density of 2.7 mmole/gram adsorbent was achieved based from elemental analysis. Batch adsorption experiments were performed using Cu2+ and Ni2+ ions in aqueous solutions with initial pH of 5 at 30 °C. Results show that the adsorption capacity of the grafted adsorbent for Cu2+ is four times higher than Ni2+ ions.

  4. Investigation of the effect of the incorporated Fe atoms in the ion-beam induced nanopatterns on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Khanbabaee, Behnam; Biermanns, Andreas; Pietsch, Ullrich [Siegen Univ. (Germany). Festkoerperphysik; Cornejo, Marina; Frost, Frank [Leibniz-Institute fuer Oberflaechenmodifizierung e.V. (IOM), Leipzig (Germany)

    2012-07-01

    Ion beam erosion of semiconductor surfaces can modify the surface and depends on main sputtering parameters; different surface topographies such as ripple or dot like pattern are fabricated on the surface. Recent experiments have shown that the incorporation of foreign metallic atoms during the sputtering process plays a crucial role in pattern formation on surfaces. In the result of investigation we report on the depth profile of Fe atoms incorporated in sputtering process on Si(100) with low energy Kr ion beam. X-ray reflectivity (XRR) measurements determine the concentration profile of Fe atoms. X-ray absorption near edge spectroscopy (XANES) at the Fe K-edge (7112 eV) shows the formation of Fe rich silicide near surface region. X-ray photoelectron spectroscopy (XPS) shows a shift in the binding energy of Si2p levels at the surface compared top bulk confirming the formation of different phases of Fe-silicide on tope and below the surface. The depth profiles obtained by XRR are compared to results obtained by complementary secondary-ion mass spectrometry (SIMS).

  5. 120 MeV Ni Ion beam induced modifications in poly (ethylene terephthalate) used in commercial bottled water

    International Nuclear Information System (INIS)

    Kumar, Vijay; Sonkawade, R. G.; Ali, Yasir; Dhaliwal, A. S.

    2012-01-01

    We report the effects of heavy ion irradiation on the optical, structural, and chemical properties of polyethylene terephthalate (PET) film used in commercial bottled water. PET bottles were exposed with 120 MeV Ni ions at fluences varying from 3 x 10 10 to 3 x 10 12 ion/cm 2 . The modifications so induced were analyzed by using UV-Vis, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy. Substantial decrease in optical band gap is observed with the increase in ion fluence. In the FTIR spectra, most of bands are decreased due the degradation of the molecular structure. XRD measurements show the decrease in peak intensity, which reflects the loss of crystallinity after irradiation.

  6. Revised data taking schedule with ion beams

    CERN Document Server

    Gazdzicki, Marek; Aduszkiewicz, A; Andrieu, B; Anticic, T; Antoniou, N; Argyriades, J; Asryan, A G; Baatar, B; Blondel, A; Blumer, J; Boldizsar, L; Bravar, A; Brzychczyk, J; Bubak, A; Bunyatov, S A; Choi, K U; Christakoglou, P; Chung, P; Cleymans, J; Derkach, D A; Diakonos, F; Dominik, W; Dumarchez, J; Engel, R; Ereditato, A; Feofilov, G A; Fodor, Z; Ferrero, A; Gazdzicki, M; Golubeva, M; Grebieszkow, K; Grzeszczuk, A; Guber, F; Hasegawa, T; Haungs, A; Igolkin, S; Ivanov, A S; Ivashkin, A; Kadija, K; Katrynska, N; Kielczewska, D; Kikola, D; Kisiel, J; Kobayashi, T; Kolesnikov, V I; Kolev, D; Kolevatov, R S; Kondratiev, V P; Kowalski, S; Kurepin, A; Lacey, R; Laszlo, A; Lyubushkin, V V; Majka, Z; I Malakhov, A; Marchionni, A; Marcinek, A; Maris, I; Matveev, V; Melkumov, G L; Meregaglia, A; Messina, M; Mijakowski, P; Mitrovski, M; Montaruli, T; Mrówczynski, St; Murphy, S; Nakadaira, T; Naumenko, P A; Nikolic, V; Nishikawa, K; Palczewski, T; Pálla, G; Panagiotou, A D; Peryt, W; Planeta, R; Pluta, J; Popov, B A; Posiadala, M; Przewlocki, P; Rauch, W; Ravonel, M; Renfordt, R; Röhrich, D; Rondio, E; Rossi, B; Roth, M; Rubbia, A; Rybczynski, M; Sadovskii, A; Sakashita, K; Schuster, T; Sekiguchi, T; Seyboth, P; Shibata, M; Sissakian, A N; Skrzypczak, E; Slodkowski, M; Sorin, A S; Staszel, P; Stefanek, G; Stepaniak, J; Strabel, C; Ströbele, H; Susa, T; Szentpétery, I; Szuba, M; Tada, M; Taranenko, A; Tsenov, R; Ulrich, R; Unger, M; Vassiliou, M; Vechernin, V V; Vesztergombi, G; Wlodarczyk, Z; Wojtaszek, A; Zipper, W; CERN. Geneva. SPS and PS Experiments Committee; SPSC

    2009-01-01

    This document presents the revised data taking schedule of NA61 with ion beams. The revision takes into account limitations due to the new LHC schedule as well as final results concerning the physics performance with secondary ion beams. It is proposed to take data with primary Ar and Xe beams in 2012 and 2014, respectively, and to test and use for physics a secondary B beam from primary Pb beam fragmentation in 2010, 2011 and 2013.

  7. Bayesian analysis of ion beam diagnostics

    International Nuclear Information System (INIS)

    Toussaint, U. von; Fischer, R.; Dose, V.

    2001-01-01

    Ion beam diagnostics are routinely used for quantitative analysis of the surface composition of mixture materials up to a depth of a few μm. Unfortunately, advantageous properties of the diagnostics, like high depth resolution in combination with a large penetration depth, no destruction of the surface, high sensitivity for large as well as for small atomic numbers, and high sensitivity are mutually exclusive. Among other things, this is due to the ill-conditioned inverse problem of reconstructing depth distributions of the composition elements. Robust results for depth distributions are obtained with adaptive methods in the framework of Bayesian probability theory. The method of adaptive kernels allows for distributions which contain only the significant information of the data while noise fitting is avoided. This is achieved by adaptively reducing the degrees of freedom supporting the distribution. As applications for ion beam diagnostics Rutherford backscattering spectroscopy and particle induced X-ray emission are shown

  8. Growth of GaAs-nanowires on GaAs (111)B substrates induced by focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Schott, Ruediger; Reuter, Dirk; Wieck, Andreas D. [Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum (Germany)

    2011-07-01

    Semiconductor nanowires are a promising system for applications in the areas of electronics and photonics and also for exploring phenomena at the nanoscale. There are several approaches to grow nanowires at arbitrary sites on the wafer. We report about growing GaAs-nanowires on GaAs(111)B substrates via the vapour-liquid-solid (VLS) mechanism in an ultra-high-vacuum (UHV)-cluster of a molecular beam epitaxy (MBE) and a focused ion beam (FIB) system. Our idea is to implant metal seeds (especially Au) for the nanowire growth by in situ patterning using FIB. Due to the UHV transfer between the FIB and the MBE chamber, no further cleaning step of the substrate surface is necessary. Formations of organized GaAs-nanowires and high aspect ratios are observed.

  9. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  10. Ion Beams: A Powerful Tool for Making New Functional Materials

    International Nuclear Information System (INIS)

    Dev, B. N.

    2010-01-01

    It is well known that ion beams play an important role in semiconductor industry, which utilizes ion implantation and irradiation for materials modification. Ion sputtering technique is used to fabricate multifunctional coatings and multilayers. Using ion implantation, there is a continued effort for fabrication of quantum bit structures for future quantum computers. Availability of focused ion beams (FIBs) has widened the applications of ion beams and nanostructured functional materials are being fabricated using FIBs. Various quantum structures can be fabricated using FIB. Ferromagnetism can either be induced or destroyed in special layered structures using ion irradiation. The magnetic exchange bias phenomenon is of tremendous utility in magnetic recording. Issues of lateral diffusion in nanoscale doping of semiconductors by FIB and an example of exchange bias enhancement by ion irradiation are discussed.

  11. Ion density in ionizing beams

    International Nuclear Information System (INIS)

    Knuyt, G.K.; Callebaut, D.K.

    1978-01-01

    The equations defining the ion density in a non-quasineutral plasma (chasma) are derived for a number of particular cases from the general results obtained in paper 1. Explicit calculations are made for a fairly general class of boundaries: all tri-axial ellipsoids, including cylinders with elliptic cross-section and the plane parallel case. The results are very simple. When the ion production and the beam intensity are constant then the steady state ion space charge is also constant in space, it varies over less than 10% for the various geometries, it may exceed the beam density largely for comparatively high pressures (usually still less than about 10 -3 Torr), it is tabulated for a number of interesting cases and moreover it can be calculated precisely and easily by some simple formulae for which also approximations are elaborated. The total potential is U =-ax 2 -by 2 -cz 2 , a, b and c constants which can be calculated immediately from the space charge density and the geometry; the largest coefficient varies at most over a factor four for various geometries; it is tabulated for a number of interesting cases. (author)

  12. Effects of implantation temperature and thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in a-SiC:H

    Energy Technology Data Exchange (ETDEWEB)

    Tsvetkova, T., E-mail: tania_tsvetkova@yahoo.co.uk [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Wright, C.D. [University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Kitova, S. [Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 109 Acad. G. Bontchev St., 1113 Sofia (Bulgaria); Bischoff, L. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 51 01 19, 01314 Dresden (Germany); Zuk, J. [Institute of Physics, Maria Curie-Sklodovska University, Pl. M.Curie-Sklodovskiej 1, 20-031 Lublin (Poland)

    2013-07-15

    The effects of implantation temperature and post-implantation thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in hydrogenated silicon–carbon alloy films have been studied. As a result of the implantation a well-expressed “darkening” effect (i.e. absorption edge shift to the longer-wavelength/lower-photon-energy region) has been registered. It is accompanied by a remarkable increase of the absorption coefficient up to 2 orders of magnitude in the measured photon energy range (1.5–3.1 eV). The optical contrast thus obtained (between implanted and unimplanted regions of the film material) has been made use of in the form of optical pattern formation by computer-operated Ga{sup +}-focused ion beam. Possible applications of this effect in the area of submicron lithography and high-density optical data storage have been suggested with regard to the most widely spread focused micro-beam systems based on Ga{sup +} liquid metal ion sources. The fact that Ga has a very low melting point (T{sub m} = 29.8 °C) and an unusual feature of volume contraction on melting are factors which favour Ga incorporation upon ion-implantation as dispersed clusters, or small nanoparticles. It has been previously noted that Ga precipitation into nanoparticles can vary dramatically (in terms of particle size) with Ga concentration and small changes in surface implant temperature, thus affecting the optical properties of the target. The precise role of implantation temperature effects, i.e. the target temperature during Ga{sup +} ion irradiation, on the optical contrast obtainable, has been therefore a key part of this study. Appropriate post-implantation annealing treatments were also studied, since these are expected to offer further benefits in reducing the required ion dose and enhancing contrast, thus increasing the cost-effectiveness of the bit-writing method.

  13. Relativistically Induced Transparency Acceleration (RITA) - laser-plasma accelerated quasi-monoenergetic GeV ion-beams with existing lasers?

    Science.gov (United States)

    Sahai, Aakash A.

    2013-10-01

    Laser-plasma ion accelerators have the potential to produce beams with unprecedented characteristics of ultra-short bunch lengths (100s of fs) and high bunch-charge (1010 particles) over acceleration length of about 100 microns. However, creating and controlling mono-energetic bunches while accelerating to high-energies has been a challenge. If high-energy mono-energetic beams can be demonstrated with minimal post-processing, laser (ω0)-plasma (ωpe) ion accelerators may be used in a wide-range of applications such as cancer hadron-therapy, medical isotope production, neutron generation, radiography and high-energy density science. Here we demonstrate using analysis and simulations that using relativistic intensity laser-pulses and heavy-ion (Mi ×me) targets doped with a proton (or light-ion) species (mp ×me) of trace density (at least an order of magnitude below the cold critical density) we can scale up the energy of quasi-mono-energetically accelerated proton (or light-ion) beams while controlling their energy, charge and energy spectrum. This is achieved by controlling the laser propagation into an overdense (ω0 RITA). Desired proton or light-ion energies can be achieved by controlling the velocity of the snowplow, which is shown to scale inversely with the rise-time of the laser (higher energies for shorter pulses) and directly with the scale-length of the plasma density gradient. Similar acceleration can be produced by controlling the increase of the laser frequency (Chirp Induced Transparency Acceleration, ChITA). Work supported by the National Science Foundation under NSF- PHY-0936278. Also, NSF-PHY-0936266 and NSF-PHY-0903039; the US Department of Energy under DEFC02-07ER41500, DE- FG02-92ER40727 and DE-FG52-09NA29552.

  14. Initial stages of ion beam-induced phase transformations in Gd2O3 and Lu2O3

    Science.gov (United States)

    Chen, Chien-Hung; Tracy, Cameron L.; Wang, Chenxu; Lang, Maik; Ewing, Rodney C.

    2018-02-01

    The atomic-scale evolution of lanthanide sesquioxides Gd2O3 and Lu2O3 irradiated with 1 MeV Kr ions at room temperature and 120 K, up to fluences of 1 × 1016 ions/cm2 (˜20 dpa), has been characterized by in situ transmission electron microscopy. At room temperature, both oxides exhibited high radiation tolerance. Irradiation did not cause any observable structural change in either material, likely due to the mobility of irradiation-induced point defects, causing efficient defect annihilation. For Gd2O3, having the larger cation ionic radius of the two materials, an irradiation-induced stacking fault structure appeared at low fluences in the low temperature irradiation. As compared with the cubic-to-monoclinic phase transformations known to result from higher energy (˜GeV) ion irradiation, Kr ions of lower energies (˜MeV) yield much lower rates of damage accumulation and thus less extensive structural modification. At a fluence of 2.5 × 1015 ions/cm2, only the initial stages of the cubic-to-monoclinic (C to B) phase transformation process, consisting of the formation and aggregation of defects, have been observed.

  15. Status of radioactive ion beams at the HRIBF

    CERN Document Server

    Stracener, D W

    2003-01-01

    Radioactive Ion Beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF) are produced using the isotope separation on-line technique and are subsequently accelerated up to a few MeV per nucleon for use in nuclear physics experiments. The first RIB experiments at the HRIBF were completed at the end of 1998 using sup 1 sup 7 F beams. Since then other proton-rich ion beams have been developed and a large number of neutron-rich ion beams are now available. The neutron-rich radioactive nuclei are produced via proton-induced fission of uranium in a low-density matrix of uranium carbide. Recently developed RIBs include sup 2 sup 5 Al from a silicon carbide target and isobarically pure beams of neutron-rich Ge, Sn, Br and I isotopes from a uranium carbide target.

  16. ECR ion source based low energy ion beam facility

    Indian Academy of Sciences (India)

    Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion ...

  17. Pseudo ribbon metal ion beam source

    International Nuclear Information System (INIS)

    Stepanov, Igor B.; Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

    2014-01-01

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface

  18. Pseudo ribbon metal ion beam source.

    Science.gov (United States)

    Stepanov, Igor B; Ryabchikov, Alexander I; Sivin, Denis O; Verigin, Dan A

    2014-02-01

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

  19. Laser induced fluorescence of trapped molecular ions

    International Nuclear Information System (INIS)

    Grieman, F.J.

    1979-10-01

    An experimental apparatus for obtaining the optical spectra of molecular ions is described. The experimental technique includes the use of three dimensional ion trapping, laser induced fluorescence, and gated photon counting methods. The ions, which are produced by electron impact, are confined in a radio-frequency quadrupole ion trap of cylindrical design. Because the quadrupole ion trap allows mass selection of the molecular ion desired for study, the analysis of the spectra obtained is greatly simplified. The ion trap also confines the ions to a region easily probed by a laser beam. 18 references

  20. Laser induced fluorescence of trapped molecular ions

    Energy Technology Data Exchange (ETDEWEB)

    Grieman, F.J.

    1979-10-01

    An experimental apparatus for obtaining the optical spectra of molecular ions is described. The experimental technique includes the use of three dimensional ion trapping, laser induced fluorescence, and gated photon counting methods. The ions, which are produced by electron impact, are confined in a radio-frequency quadrupole ion trap of cylindrical design. Because the quadrupole ion trap allows mass selection of the molecular ion desired for study, the analysis of the spectra obtained is greatly simplified. The ion trap also confines the ions to a region easily probed by a laser beam. 18 references.

  1. Materials science education: ion beam modification and analysis of materials

    Science.gov (United States)

    Zimmerman, Robert; Muntele, Claudiu; Ila, Daryush

    2012-08-01

    The Center for Irradiation of Materials (CIM) at Alabama A&M University (http://cim.aamu.edu) was established in 1990 to serve the University in its research, education and services to the need of the local community and industry. CIM irradiation capabilities are oriented around two tandem-type ion accelerators with seven beam lines providing high-resolution Rutherford backscattering spectrometry, MeV focus ion beam, high-energy ion implantation and irradiation damage studies, particle-induced X-ray emission, particle-induced gamma emission and ion-induced nuclear reaction analysis in addition to fully automated ion channeling. One of the two tandem ion accelerators is designed to produce high-flux ion beam for MeV ion implantation and ion irradiation damage studies. The facility is well equipped with a variety of surface analysis systems, such as SEM, ESCA, as well as scanning micro-Raman analysis, UV-VIS Spectrometry, luminescence spectroscopy, thermal conductivity, electrical conductivity, IV/CV systems, mechanical test systems, AFM, FTIR, voltammetry analysis as well as low-energy implanters, ion beam-assisted deposition and MBE systems. In this presentation, we will demonstrate how the facility is used in material science education, as well as providing services to university, government and industry researches.

  2. High harmonic ion cyclotron heating in DIII-D: Beam ion absorption and sawtooth stabilization

    International Nuclear Information System (INIS)

    Heidbrink, W.W.; Fredrickson, E.D.; Mau, T.K.; Petty, C.C.; Pinsker, R.I.; Porkolab, M.; Rice, B.W.

    1999-01-01

    Combined neutral beam injection and fast wave heating at the fourth cyclotron harmonic produce an energetic deuterium beam ion tail in the DIII-D tokamak. When the concentration of thermal hydrogen exceeds ∼ 5%, the beam ion absorption is suppressed in favour of second harmonic hydrogen absorption. As theoretically expected, the beam absorption increases with beam ion gyro-radius; also, central absorption at the fifth harmonic is weaker than central absorption at the fourth harmonic. For central heating at the fourth harmonic, an energetic, perpendicular, beam population forms inside the q = 1 surface. The beam ion tail transiently stabilizes the sawtooth instability but destabilizes toroidicity induced Alfven eigenmodes (TAEs). Saturation of the central heating correlates with the onset of the TAEs. Continued expansion of the q = 1 radius eventually precipitates a sawtooth crash; complete magnetic reconnection is observed. (author)

  3. Fusion at counterstreaming ion beams - ion optic fusion (IOF)

    International Nuclear Information System (INIS)

    Gryzinski, M.

    1981-01-01

    The results of investigation are briefly reviewed in the field of ion optic fusion performed at the Institute of Nuclear Research in Swierk. The ion optic fusion concept is based on the possibility of obtaining fusion energy at highly ordered motion of ions in counterstreaming ion beams. For this purpose TW ion beams must be produced and focused. To produce dense and charge-neutralized ion beams the selective conductivity and ballistic focusing ideas were formulated and used in a series of RPI devices with low-pressure cylindrical discharge between grid-type electrodes. 100 kA, 30 keV deuteron beams were successfully produced and focused into the volume of 1 cm 3 , yielding 10 9 neutrons per 200 ns shot on a heavy ice target. Cylindrically convergent ion beams with magnetic anti-defocusing were proposed in order to reach a positive energy gain at reasonable energy level. (J.U.)

  4. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  5. Ion beam modification of solids ion-solid interaction and radiation damage

    CERN Document Server

    Wesch, Werner

    2016-01-01

    This book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for ins...

  6. Low energy ion beam dynamics of NANOGAN ECR ion source

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Sarvesh, E-mail: sarvesh@iuac.res.in; Mandal, A.

    2016-04-01

    A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

  7. Hydrodynamic motion of a heavy-ion-beam-heated plasma

    International Nuclear Information System (INIS)

    Jacoby, J.; Hoffmann, D.H.H.; Mueller, R.W.; Mahrt-Olt, K.; Arnold, R.C.; Schneider, V.; Maruhn, J.

    1990-01-01

    The first experimental study is reported of a plasma produced by a heavy-ion beam. Relevant parameters for heating with heavy ions are described, temperature and density of the plasma are determined, and the hydrodynamic motion in the target induced by the beam is studied. The measured temperature and the free-electron density are compared with a two-dimensional hydrodynamic-model calculation. In accordance with the model, a radial rarefaction wave reaching the center of the target was observed and the penetration velocity of the ion beam into the xenon-gas target was measured

  8. Structuring of silicon with low energy focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

  9. Ion-beam plasma and propagation of intense compensated ion beams

    International Nuclear Information System (INIS)

    Gabovich, M.D.

    1977-01-01

    Discussed are the results of investigation of plasma properties recieved by neutralization of intensive ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown, that not only dinamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account at solving the problem of obtaining ''superdense'' compensated beams

  10. Ion-beam plasma and propagation of intense compensated ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Gabovich, M D [AN Ukrainskoj SSR, Kiev. Inst. Fiziki

    1977-02-01

    Discussed are the results of investigation of plasma properties received by neutralization of intense ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown that not only dynamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account in solving the problem of obtaining ''superdense'' compensated beams.

  11. Conical pinched electron beam diode for intense ion beam source

    International Nuclear Information System (INIS)

    Matsukawa, Yoshinobu; Nakagawa, Yoshiro

    1982-01-01

    For the purpose of improvement of the pinched electron beam diode, the production of an ion beam by a diode with electrodes in a conical shape was studied at low voltage operation (--200 kV). The ion beam is emitted from a small region of the diode apex. The mean ion beam current density near the axis at 12 cm from the diode apex is two or three times that from an usual flat parallel diode with the same dimension and impedance. The brightness and the power brightness at the otigin are 450 MA/cm 2 sr and 0.12 TW/cm 2 sr respectively. (author)

  12. Tool steel ion beam assisted nitrocarburization

    International Nuclear Information System (INIS)

    Zagonel, L.F.; Alvarez, F.

    2007-01-01

    The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

  13. Beam-plasma instability in ion beam systems used in neutral beam generation

    International Nuclear Information System (INIS)

    Hooper, E.B. Jr.

    1977-02-01

    The beam-plasma instability is analyzed for the ion beams used for neutral beam generation. Both positive and negative ion beams are considered. Stability is predicted when the beam velocity is less than the electron thermal velocity; the only exception occurs when the electron density accompanying a negative ion beam is less than the ion density by nearly the ratio of electron to ion masses. For cases in which the beam velocity is greater than the electron thermal velocity, instability is predicted near the electron plasma frequency

  14. ORNL positive ion neutral beam program

    International Nuclear Information System (INIS)

    Whealton, J.H.; Haselton, H.H.; Barber, G.C.

    1978-01-01

    The neutral beam group at Oak Ridge National Laboratory has constructed neutral beam generators for the ORMAK and PLT devices, is presently constructing neutral beam devices for the ISX and PDX devices, and is contemplating the construction of neutral beam systems for the advanced TNS device. These neutral beam devices stem from the pioneering work on ion sources of G. G. Kelley and O. B. Morgan. We describe the ion sources under development at this Laboratory, the beam optics exhibited by these sources, as well as some theoretical considerations, and finally the remainder of the beamline design

  15. Cooled heavy ion beams at the ESR

    International Nuclear Information System (INIS)

    Steck, M.; Beckert, K.; Bosch, F.; Eickhoff, H.; Franzke, B.; Klepper, O.; Nolden, F.; Reich, H.; Schlitt, B.; Spaedtke, P.; Winkler, T.

    1996-01-01

    The storage ring ESR has been used in various operational modes for experiments with electron cooled heavy ion beams. Besides the standard storage mode including injection and beam accumulation the deceleration of highly charged ions has been demonstrated. Beams of highly charged ions have been injected and accumulated and finally decelerated to a minimum energy of 50 MeV/u. An ultraslow extraction method using charge changing processes is now also available for cooled beams of highly charged ions. For in ring experiments the internal gas jet and the cold electron beam of the cooling system are applied as targets. High precision mass spectrometry by Schottky noise detection has been demonstrated. Operation at transition energy has been achieved with cooled beams opening the field for experiments which require an isochronous revolution of the ions. (orig.)

  16. Preparation of New Adsorbent Containing Hydroxamic Acid Groups by Electron Beam-Induced Grafting for Metal Ion Adsorption

    International Nuclear Information System (INIS)

    Suwanmala, Phiriyatorn; Hoshina, Hiroyuki; Seko, Noriaki; Tamada, Masao

    2007-08-01

    Full text: A new adsorbent containing hydroxamic acid groups was synthesized by electron beam-induced graft copolymerization of methyl acrylate (MA) onto nonwoven fabric composed of polyethylene-coated polypropylene fiber. Conversion of ester groups of the grafted copolymer into the hydroxamic groups was performed by treatment with an alkaline solution of hydroxylamine (HA). Adsorbent containing hydroxamic acid groups can adsorb 99% of UO2 2+ , 98% of V5+, 97% of Pb2+ and 96% of Al3+ at pH, 5, 4, 6, and 4, respectively, after coming into contact with 100 ppb metal solution for 24 h

  17. N{sup +} ion-implantation-induced defects in ZnO studied with a slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z Q [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Sekiguchi, T [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Yuan, X L [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Maekawa, M [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Kawasuso, A [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan)

    2004-01-21

    Undoped ZnO single crystals were implanted with multiple-energy N{sup +} ions ranging from 50 to 380 keV with doses from 10{sup 12} to 10{sup 14} cm{sup -2}. Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N{sup +} implantation, the ZnO layer still shows n-type conductivity.

  18. Ion-Beam-Excited Electrostatic Ion Cyclotron Waves

    DEFF Research Database (Denmark)

    Michelsen, Poul; Pécseli, Hans; Juul Rasmussen, Jens

    1976-01-01

    Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field.......Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field....

  19. Ga+ focused-ion-beam implantation-induced masking for H2 etching of ZnO films

    International Nuclear Information System (INIS)

    Fang, Hsin-Chiao; Huang, Jun-Han; Chu, Wen-Huei; Liu, Chuan-Pu

    2010-01-01

    Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga + fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 x 10 16 cm -2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H 2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤ 2.8 x 10 16 cm -2 , Ga + ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H 2 etching due to the higher electronegativity of Ga + towards oxygen. However, for the fluences ≥ 4.6 x 10 16 cm -2 , the surface particles are responsible for the etch stop and are identified as ZnGa 2 O 4 . We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

  20. Teeth characterization using ion beam analysis

    International Nuclear Information System (INIS)

    Rizzutto, M.A.; Added, N.; Tabacniks, M.H.; Falla-Sotelo, F.; Curado, J.F.; Francci, C.; Markarian, R.A.; Quinelato, A.; Youssef, F.; Mori, M.; Youssef, M.

    2006-01-01

    A collaboration project between the School of Dentistry and the Institute of Physics of the University of Sao Paulo has been established to measure elemental concentrations in teeth by proton induced X-ray emission (PIXE) and heavy ion elastic recoil detection analysis (HI-ERDA) techniques. Data on trace elements in human, bovine and swine teeth, analyzed by PIXE with a 2.4 MeV proton beam, were compared and concentrations for several elements were obtained with tens of μg/g sensitivity. HI-ERDA measurements employing a 52 MeV Cl beam were done to evaluate changes in elementary concentration in dental enamel after bleaching treatment with different products in 25 bovine incisors teeth. This nondestructive technique allowed the measurements of Ca, P, O and C concentrations above the limit of 100 μg/g. (author)

  1. Radiation effects of ion beams on polymers

    International Nuclear Information System (INIS)

    Tagawa, Seiichi

    1993-01-01

    Recent progress in the radiation effects of ion beams on polymers are reviewed briefly. Our recent work on the radiation effects of ion beams on polystyrene thin films on silicon wafers and time resolved emission studies on polymers are described. (orig.)

  2. Ion Beams in Nanoscience and Technology

    CERN Document Server

    Hellborg, Ragnar

    2010-01-01

    Energetic ion beam irradiation is the basis of a wide plethora of powerful research- and fabrication-techniques for materials characterisation and processing on a nanometre scale. This book is suitable for practitioners, researchers and graduate students working in the field of ion beams and application

  3. Ion-Ion Plasmas Produced by Electron Beams

    Science.gov (United States)

    Fernsler, R. F.; Leonhardt, D.; Walton, S. G.; Meger, R. A.

    2001-10-01

    The ability of plasmas to etch deep, small-scale features in materials is limited by localized charging of the features. The features charge because of the difference in electron and ion anisotropy, and thus one solution now being explored is to use ion-ion plasmas in place of electron-ion plasmas. Ion-ion plasmas are effectively electron-free and consist mainly of positive and negative ions. Since the two ion species behave similarly, localized charging is largely eliminated. However, the only way to produce ion-ion plasmas at low gas pressure is to convert electrons into negative ions through two-body attachment to neutrals. While the electron attachment rate is large at low electron temperatures (Te < 1 eV) in many of the halogen gases used for processing, these temperatures occur in most reactors only during the afterglow when the heating fields are turned off and the plasma is decaying. By contrast, Te is low nearly all the time in plasmas produced by electron beams, and therefore electron beams can potentially produce ion-ion plasmas continuously. The theory of ion-ion plasmas formed by pulsed electron beams is examined in this talk and compared with experimental results presented elsewhere [1]. Some general limitations of ion-ion plasmas, including relatively low flux levels, are discussed as well. [1] See the presentation by D. Leonhardt et al. at this conference.

  4. Beam emittance measurements on multicusp ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Sarstedt, M.; Lee, Y.; Leung, K.N. [and others

    1995-08-01

    Multicusp ion sources are used for various applications. Presently, the implementation of this type of ion source planned for the development of an ion beam lithography machine, which will be used for the projection of sub-0.2 {mu}m patterns onto a wafer substrate. Since, for this application, a very good beam quality and a small ion energy spread are required, emittance measurements have been performed on a multicusp ion source for various source conditions. It is shown that the installation of proper capacitors between the extraction electrodes is necessary to avoid rf-pickup, which otherwise leads to a distortion of the beam emittance. The influence of the magnetic filter field on the beam emittance has been investigated, and the beam emittance of a dc filament-discharge plasma has also been compared to that of an rf-generated plasma.

  5. Beam emittance measurements on multicusp ion sources

    International Nuclear Information System (INIS)

    Sarstedt, M.; Lee, Y.; Leung, K.N.

    1995-08-01

    Multicusp ion sources are used for various applications. Presently, the implementation of this type of ion source planned for the development of an ion beam lithography machine, which will be used for the projection of sub-0.2 μm patterns onto a wafer substrate. Since, for this application, a very good beam quality and a small ion energy spread are required, emittance measurements have been performed on a multicusp ion source for various source conditions. It is shown that the installation of proper capacitors between the extraction electrodes is necessary to avoid rf-pickup, which otherwise leads to a distortion of the beam emittance. The influence of the magnetic filter field on the beam emittance has been investigated, and the beam emittance of a dc filament-discharge plasma has also been compared to that of an rf-generated plasma

  6. Modeling of ion beam surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Stinnett, R W [Quantum Manufacturing Technologies, Inc., Albuquerque, NM (United States); Maenchen, J E; Renk, T J [Sandia National Laboratories, Albuquerque, NM (United States); Struve, K W [Mission Research Corporation, Albuquerque, NM (United States); Campbell, M M [PASTDCO, Albuquerque, NM (United States)

    1997-12-31

    The use of intense pulsed ion beams is providing a new capability for surface engineering based on rapid thermal processing of the top few microns of metal, ceramic, and glass surfaces. The Ion Beam Surface Treatment (IBEST) process has been shown to produce enhancements in the hardness, corrosion, wear, and fatigue properties of surfaces by rapid melt and re-solidification. A new code called IBMOD was created, enabling the modeling of intense ion beam deposition and the resulting rapid thermal cycling of surfaces. This code was used to model the effect of treatment of aluminum, iron, and titanium using different ion species and pulse durations. (author). 3 figs., 4 refs.

  7. Intense ion beams for inertial confinement fusion

    International Nuclear Information System (INIS)

    Mehlhorn, T.A.

    1997-01-01

    Intense beams of light of heavy ions are being studied as inertial confinement fusion (ICF) drivers for high yield and energy. Heavy and light ions have common interests in beam transport, targets, and alternative accelerators. Self-pinched transport is being jointly studied. This article reviews the development of intense ion beams for ICF. Light-ion drivers are highlighted because they are compact, modular, efficient and low cost. Issues facing light ions are: (1) decreasing beam divergence; (2) increasing beam brightness; and (3) demonstrating self-pinched transport. Applied-B ion diodes are favored because of efficiency, beam brightness, perceived scalability, achievable focal intensity, and multistage capability. A light-ion concept addressing these issues uses: (1) an injector divergence of ≤ 24 mrad at 9 MeV; (2) two-stage acceleration to reduce divergence to ≤ 12 mrad at 35 MeV; and (3) self-pinched transport accepting divergences up to 12 mrad. Substantial progress in ion-driven target physics and repetitive ion diode technology is also presented. Z-pinch drivers are being pursued as the shortest pulsed power path to target physics experiments and high-yield fusion. However, light ions remain the pulsed power ICF driver of choice for high-yield fusion energy applications that require driver standoff and repetitive operation. 100 refs

  8. Beam brilliance investigation of high current ion beams at GSI heavy ion accelerator facility.

    Science.gov (United States)

    Adonin, A A; Hollinger, R

    2014-02-01

    In this work the emittance measurements of high current Ta-beam provided by VARIS (Vacuum Arc Ion Source) ion source are presented. Beam brilliance as a function of beam aperture at various extraction conditions is investigated. Influence of electrostatic ion beam compression in post acceleration gap on the beam quality is discussed. Use of different extraction systems (single aperture, 7 holes, and 13 holes) in order to achieve more peaked beam core is considered. The possible ways to increase the beam brilliance are discussed.

  9. Metal negative ion beam extraction from a radio frequency ion source

    Energy Technology Data Exchange (ETDEWEB)

    Kanda, S.; Yamada, N.; Kasuya, T.; Romero, C. F. P.; Wada, M.

    2015-04-08

    A metal ion source of magnetron magnetic field geometry has been designed and operated with a Cu hollow target. Radio frequency power at 13.56 MHz is directly supplied to the hollow target to maintain plasma discharge and induce self-bias to the target for sputtering. The extraction of positive and negative Cu ion beams have been tested. The ion beam current ratio of Cu{sup +} to Ar{sup +} has reached up to 140% when Ar was used as the discharge support gas. Cu{sup −} ion beam was observed at 50 W RF discharge power and at a higher Ar gas pressure in the ion source. Improvement of poor RF power matching and suppression of electron current is indispensable for a stable Cu{sup −} ion beam production from the source.

  10. Constraints on ion beam handling for intersecting beam experiments

    International Nuclear Information System (INIS)

    Kruse, T.

    1981-01-01

    The intense synchrotron radiation beams from the NSLS uv or x-ray storage rings still do not compare in monochromatized photon flux with a laser beam, a fact which becomes apparent in considering reaction rates for interaction of photon and ion beams. There are two prototypical interaction geometries, parallel and perpendicular. Calculations should properly be done in the rest frame of the ion beam; however, expected beta values are small, so the lab frame will be employed and aberration and Doppler shift effects neglected

  11. Direct deposition of gold on silicon with focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

  12. Beam-beam observations in the Relativistic Heavy Ion Collider

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Y. [Brookhaven National Laboratory (BNL), Upton, NY (United States); Fischer, W. [Brookhaven National Laboratory (BNL), Upton, NY (United States); White, S. [Brookhaven National Laboratory (BNL), Upton, NY (United States)

    2015-06-24

    The Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory has been operating since 2000. Over the past decade, thanks to the continuously increased bunch intensity and reduced β*s at the interaction points, the maximum peak luminosity in the polarized proton operation has been increased by more than two orders of magnitude. In this article, we first present the beam-beam observations in the previous RHIC polarized proton runs. Then we analyze the mechanisms for the beam loss and emittance growth in the presence of beam-beam interaction. The operational challenges and limitations imposed by beam-beam interaction and their remedies are also presented. In the end, we briefly introduce head-on beam-beam compensation with electron lenses in RHIC.

  13. Influence of plasma-induced energy deposition effects, the equation of state, thermal ionization, pulse shaping, and radiation on ion-beam-driven expansions of plane metal targets

    International Nuclear Information System (INIS)

    Long, K.A.; Tahir, N.A.

    1986-01-01

    In a previous paper by Long and Tahir [Phys. Fluids 29, 275 (1986)], the motion of plane targets irradiated by ion beams whose energy deposition was assumed to be independent of the ion energy, and the temperature and density of the plasma, was analyzed. In this paper, the analytic solution is extended in order to include the effects of a temperature-and density-dependent energy deposition as a result of electron excitation, an improved equation of state, thermal ionization, a pulse shape, and radiation losses. The change in the energy deposition with temperature and density leads to range shortening and an increased power deposition in the target. It is shown how the analytic theory can be used to analyze experiments to measure the enhanced energy deposition. In order to further analyze experiments, numerical simulations are presented which include the plasma-induced effects on the energy deposition. It is shown that since the change in the range is due to both decrease in density and the increase in temperature, it is not possible to separate these two effects in present experiments. Therefore, the experiments which measure the time-dependent energy of the ions emerging from the back side of a plane target do not as yet measure the energy loss as a function of the density and temperature of the plasma or of the energy of the ion, but only an averaged loss over certain ranges of these physical quantities

  14. Beam losses in heavy ion drivers

    CERN Document Server

    Mustafin, E R; Hofmann, I; Spiller, P J

    2002-01-01

    While beam loss issues have hardly been considered in detail for heavy ion fusion scenarios, recent heavy ion machine developments in different labs (European Organization for Nuclear Research (CERN), Gesellschaft fur Schwerionenforschung (GSI), Institute for Theoretical and Experimental Physics (ITEP), Relativistic Heavy-Ion Collider (RHIC)) have shown the great importance of beam current limitations due to ion losses. Two aspects of beam losses in heavy ion accelerators are theoretically considered: (1) secondary neutron production due to lost ions, and (2) vacuum pressure instability due to charge exchange losses. Calculations are compared and found to be in good agreement with measured data. The application to a Heavy-Ion Driven Inertial Fusion (HIDIF) scenario is discussed. 12 Refs.

  15. Pulsed high current ion beam processing equipment

    International Nuclear Information System (INIS)

    Korenev, S.A.; Perry, A.

    1995-01-01

    A pulsed high voltage ion source is considered for use in ion beam processing for the surface modification of materials, and deposition of conducting films on different substrates. The source consists of an Arkad'ev-Marx high voltage generator, a vacuum ion diode based on explosive ion emission, and a vacuum chamber as substrate holder. The ion diode allows conducting films to be deposited from metal or allow sources, with ion beam mixing, onto substrates held at a pre-selected temperature. The main variables can be set in the ranges: voltage 100-700 kV, pulse length 0.3 μs, beam current 1-200 A depending on the ion chosen. The applications of this technology are discussed in semiconductor, superconductor and metallizing applications as well as the direction of future development and cost of these devices for commercial application. 14 refs., 6 figs

  16. Cobalt alloy ion sources for focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

  17. High current density ion beam measurement techniques

    International Nuclear Information System (INIS)

    Ko, W.C.; Sawatzky, E.

    1976-01-01

    High ion beam current measurements are difficult due to the presence of the secondary particles and beam neutralization. For long Faraday cages, true current can be obtained only by negative bias on the target and by summing the cage wall and target currents; otherwise, the beam will be greatly distorted. For short Faraday cages, a combination of small magnetic field and the negative target bias results in correct beam current. Either component alone does not give true current

  18. Production of ion beam by conical pinched electron beam diode

    International Nuclear Information System (INIS)

    Matsukawa, Y.; Nakagawa, Y.

    1982-01-01

    Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)

  19. Intense non-relativistic cesium ion beam

    International Nuclear Information System (INIS)

    Lampel, M.C.

    1984-02-01

    The Heavy Ion Fusion group at Lawrence Berkeley Laboratory has constructed the One Ampere Cesium Injector as a proof of principle source to supply an induction linac with a high charge density and high brightness ion beam. This is studied here. An electron beam probe was developed as the major diagnostic tool for characterizing ion beam space charge. Electron beam probe data inversion is accomplished with the EBEAM code and a parametrically adjusted model radial charge distribution. The longitudinal charge distribution was not derived, although it is possible to do so. The radial charge distribution that is derived reveals an unexpected halo of trapped electrons surrounding the ion beam. A charge fluid theory of the effect of finite electron temperature on the focusing of neutralized ion beams (Nucl. Fus. 21, 529 (1981)) is applied to the problem of the Cesium beam final focus at the end of the injector. It is shown that the theory's predictions and assumptions are consistent with the experimental data, and that it accounts for the observed ion beam radius of approx. 5 cm, and the electron halo, including the determination of an electron Debye length of approx. 10 cm

  20. Synchrotron radiation induced x-ray micro analysis: A realistic alternative for electron- and ion beam microscopy?

    Energy Technology Data Exchange (ETDEWEB)

    Janssens, K.; Adams, F. [Universitaire Instelling Antwerpen, Antwerp (Belgium). Dept. of Chemistry; Rivers, M.L.; Jones, K.W. [Brookhaven National Lab., Upton, NY (United States)

    1992-10-01

    Synchrotron Radiation induced X-ray micro Fluorescence analysis ({mu}-SRXRF) is compared with more conventional microanalytical techniques such as Secondary Ion Microscopy (SIMS) and Electron Probe X-ray Microanalysis (EPXMA) for two typical microanalytical applications. SRXRF and EPXMA are employed for the analysis of individual particles, showing the complementary character of both techniques. By means of element mapping of trace constituents in a heterogeneous feldspar, the strong and weak points of SRXRF in comparison to EPXMA and SIMS are illustrated. The most striking difference between SRXRF and the other two microanalytical methods is the ability of SRXRF to probe deep into the investigated Material, whereas SIMS and EPXMA only investigate the upper surface of the material. The possibilities of SRXRF at third generation synchrotron rings is also briefly discussed.

  1. Synchrotron radiation induced x-ray micro analysis: A realistic alternative for electron- and ion beam microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Janssens, K.; Adams, F. (Universitaire Instelling Antwerpen, Antwerp (Belgium). Dept. of Chemistry); Rivers, M.L.; Jones, K.W. (Brookhaven National Lab., Upton, NY (United States))

    1992-01-01

    Synchrotron Radiation induced X-ray micro Fluorescence analysis ([mu]-SRXRF) is compared with more conventional microanalytical techniques such as Secondary Ion Microscopy (SIMS) and Electron Probe X-ray Microanalysis (EPXMA) for two typical microanalytical applications. SRXRF and EPXMA are employed for the analysis of individual particles, showing the complementary character of both techniques. By means of element mapping of trace constituents in a heterogeneous feldspar, the strong and weak points of SRXRF in comparison to EPXMA and SIMS are illustrated. The most striking difference between SRXRF and the other two microanalytical methods is the ability of SRXRF to probe deep into the investigated Material, whereas SIMS and EPXMA only investigate the upper surface of the material. The possibilities of SRXRF at third generation synchrotron rings is also briefly discussed.

  2. Synchrotron radiation induced x-ray micro analysis: A realistic alternative for electron- and ion beam microscopy?

    International Nuclear Information System (INIS)

    Janssens, K.; Adams, F.

    1992-01-01

    Synchrotron Radiation induced X-ray micro Fluorescence analysis (μ-SRXRF) is compared with more conventional microanalytical techniques such as Secondary Ion Microscopy (SIMS) and Electron Probe X-ray Microanalysis (EPXMA) for two typical microanalytical applications. SRXRF and EPXMA are employed for the analysis of individual particles, showing the complementary character of both techniques. By means of element mapping of trace constituents in a heterogeneous feldspar, the strong and weak points of SRXRF in comparison to EPXMA and SIMS are illustrated. The most striking difference between SRXRF and the other two microanalytical methods is the ability of SRXRF to probe deep into the investigated Material, whereas SIMS and EPXMA only investigate the upper surface of the material. The possibilities of SRXRF at third generation synchrotron rings is also briefly discussed

  3. Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam

    Science.gov (United States)

    Jiang, M.; Wang, D. D.; Chen, Z. Q.; Kimura, S.; Yamashita, Y.; Mori, A.; Uedono, A.

    2013-01-01

    Undoped ZnO single crystals were implanted with 300 keV Si+ ions to a dose of 6 × 1016 cm-2. A combination of X-ray diffraction (XRD), positron annihilation, Raman scattering, high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) was used to study the microstructure evolution after implantation and subsequent annealing. A very large increase of Doppler broadening S parameters in Si+-implanted region was detected by using a slow positron beam, indicating that vacancy clusters or microvoids are induced by implantation. The S parameters increase further after annealing up to 700 °C, suggesting agglomeration of these vacancies or microvoids to larger size. Most of these defects are removed after annealing up to 1100 °C. The other measurements such as XRD, Raman scattering, and PL all indicate severe damage and even disordered structure induced by Si+ implantation. The damage and disordered lattice shows recovery after annealing above 700 °C. Amorphous regions are observed by HRTEM measurement, directly testifies that amorphous phase is induced by Si+ implantation in ZnO. Analysis of the S - W correlation and the coincidence Doppler broadening spectra gives direct evidence of SiO2 precipitates in the sample annealed at 700 °C, which strongly supports the chemical effect of Si ions on the amorphization of ZnO lattice.

  4. The cooling of confined ions driven by laser beams

    International Nuclear Information System (INIS)

    Reyna, L.G.

    1993-01-01

    We finalize the dynamics of confined ions driven by a quantized radiation field. The ions can absorb photons from an incident laser beam and relax back to the ground state by either induced emissions or spontaneous emissions. Here we assume that the absorption of photons is immediately followed by spontaneous emissions, resulting in single-level ions perturbed by the exchange of momentum with the radiation field. The probability distribution of the ions is calculated using singular expansions in the low noise asymptotic limit. The present calculations reproduce the quantum results in the limit of heavy particles in static traps, and the classical results of ions in radio-frequency confining wells

  5. Modified betatron for ion beam fusion

    International Nuclear Information System (INIS)

    Rostoker, N.; Fisher, A.

    1986-01-01

    An intense neutralized ion beam can be injected and trapped in magnetic mirror or tokamak geometry. The details of the process involve beam polarization so that the beam crosses the fringing fields without deflection and draining the polarization when the beam reaches the plasma. Equilibrium requires that a large betatron field be added in tokamak geometry. In mirror geometry a toroidal field must be added by means of a current along the mirror axis. In either case, the geometry becomes that of the modified betatron which has been studied experimentally and theoretically in recent years. We consider beams of d and t ions with a mean energy of 500 kev and a temperature of about 50 kev. The plasma may be a proton plasma with cold ions. It is only necessary for beam trapping or to carry currents. The ion energy for slowing down is initially 500 kev and thermonuclear reactions depend only on the beam temperature of 50 kev which changes very slowly. This new configuration for magnetic confinement fusion leads to an energy gain of 10--20 for d-t reactions whereas previous studies of beam target interaction predicted a maximum energy gain of 3--4. The high beam energy available with pulsed ion diode technology is also essential for advanced fuels. 16 refs., 3 figs

  6. Multicharged and intense heavy ion beam sources

    International Nuclear Information System (INIS)

    Kutner, V.B.

    1981-01-01

    The cyclotron plasma-are source (PIG), duoplasmatron (DP), laser source (LS), electron beam ion source (EBIS) and electron cyclotron resonance source (ECRS) from the viewpoint of generating intense and high charge state beams are considered. It is pointed out that for the last years three types of multicharged ion sources-EBIS, ECR and LS have been essentially developed. In the EBIS source the Xe 48+ ions are produced. The present day level of the development of the electron-beam ionization technique shows that by means of this technique intensive uranium nuclei beams production becomes a reality. On the ECR source Xe 26+ approximately 4x10 10 h/s, Asub(r)sup(12+) approximately 10 12 h/s intensive ion beams are produced. In the laser source a full number of C 6+ ions during one laser pulse constitutes not less than 10 10 from the 5x10mm 2 emission slit. At the present time important results are obtained pointing to the possibility to separate the ion component of laser plasma in the cyclotron central region. On the PIG source the Xe 15+ ion current up to 10μA per pulse is produced. In the duoplasmatron the 11-charge state of xenon ion beams is reached [ru

  7. Intense pulsed heavy ion beam technology

    International Nuclear Information System (INIS)

    Masugata, Katsumi; Ito, Hiroaki

    2010-01-01

    Development of intense pulsed heavy ion beam accelerator technology is described for the application of materials processing. Gas puff plasma gun and vacuum arc discharge plasma gun were developed as an active ion source for magnetically insulated pulsed ion diode. Source plasma of nitrogen and aluminum were successfully produced with the gas puff plasma gun and the vacuum arc plasma gun, respectively. The ion diode was successfully operated with gas puff plasma gun at diode voltage 190 kV, diode current 2.2 kA and nitrogen ion beam of ion current density 27 A/cm 2 was obtained. The ion composition was evaluated by a Thomson parabola spectrometer and the purity of the nitrogen ion beam was estimated to be 86%. The diode also operated with aluminum ion source of vacuum arc plasma gun. The ion diode was operated at 200 kV, 12 kA, and aluminum ion beam of current density 230 A/cm 2 was obtained. The beam consists of aluminum ions (Al (1-3)+ ) of energy 60-400 keV, and protons (90-130 keV), and the purity was estimated to be 89%. The development of the bipolar pulse accelerator (BPA) was reported. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. The generator was tested with dummy load of 7.5 ohm, bipolar pulses of -138 kV, 72 ns (1st pulse) and +130 kV, 70 ns (2nd pulse) were successively generated. By applying the bipolar pulse to the drift tube of the BPA, nitrogen ion beam of 2 A/cm 2 was observed in the cathode, which suggests the bipolar pulse acceleration. (author)

  8. Electron beam based transversal profile measurements of intense ion beams

    International Nuclear Information System (INIS)

    El Moussati, Said

    2014-01-01

    A non-invasive diagnostic method for the experimental determination of the transverse profile of an intense ion beam has been developed and investigated theoretically as well as experimentally within the framework of the present work. The method is based on the deflection of electrons when passing the electromagnetic field of an ion beam. To achieve this an electron beam is employed with a specifically prepared transversal profile. This distinguish this method from similar ones which use thin electron beams for scanning the electromagnetic field [Roy et al. 2005; Blockland10]. The diagnostic method presented in this work will be subsequently called ''Electron-Beam-Imaging'' (EBI). First of all the influence of the electromagnetic field of the ion beam on the electrons has been theoretically analyzed. It was found that the magnetic field causes only a shift of the electrons along the ion beam axis, while the electric field only causes a shift in a plane transverse to the ion beam. Moreover, in the non-relativistic case the magnetic force is significantly smaller than the Coulomb one and the electrons suffer due to the magnetic field just a shift and continue to move parallel to their initial trajectory. Under the influence of the electric field, the electrons move away from the ion beam axis, their resulting trajectory shows a specific angle compared to the original direction. This deflection angle practically depends just on the electric field of the ion beam. Thus the magnetic field has been neglected when analysing the experimental data. The theoretical model provides a relationship between the deflection angle of the electrons and the charge distribution in the cross section of the ion beam. The model however only can be applied for small deflection angles. This implies a relationship between the line-charge density of the ion beam and the initial kinetic energy of the electrons. Numerical investigations have been carried out to clarify the

  9. Ion beam processing of bio-ceramics

    Science.gov (United States)

    Ektessabi, A. M.

    1995-05-01

    Thin films of bio-inert (TiO 2+α, Al 2O 3+α) and bio-active (compounds of calcium and phosphorus oxides, hydroxyapatite) were deposited on the most commonly used implant materials such as titanium and stainless steel, using a dual-ion-beam deposition system. Rutherford backscattering spectroscopy was carried out for quantitative measurement of the interfacial atomic mixing and the composition of the elements. The experimental results show that by controlling the ion beam energy and current, thin films with very good mechanical properties are obtained as a result of the ion beam mixing within the film and at the interface of the film and substrate.

  10. Beam-loss induced pressure rise of Large Hadron Collider collimator materials irradiated with 158  GeV/u In^{49+} ions at the CERN Super Proton Synchrotron

    Directory of Open Access Journals (Sweden)

    E. Mahner

    2004-10-01

    Full Text Available During heavy ion operation, large pressure rises, up to a few orders of magnitude, were observed at CERN, GSI, and BNL. The dynamic pressure rises were triggered by lost beam ions that impacted onto the vacuum chamber walls and desorbed about 10^{4} to 10^{7} molecules per ion. The deterioration of the dynamic vacuum conditions can enhance charge-exchange beam losses and can lead to beam instabilities or even to beam abortion triggered by vacuum interlocks. Consequently, a dedicated measurement of heavy-ion induced molecular desorption in the GeV/u energy range is important for Large Hadron Collider (LHC ion operation. In 2003, a desorption experiment was installed at the Super Proton Synchrotron to measure the beam-loss induced pressure rise of potential LHC collimator materials. Samples of bare graphite, sputter coated (Cu, TiZrV graphite, and 316 LN (low carbon with nitrogen stainless steel were irradiated under grazing angle with 158  GeV/u indium ions. After a description of the new experimental setup, the results of the pressure rise measurements are presented, and the derived desorption yields are compared with data from other experiments.

  11. Materials processing with intense pulsed ion beams

    International Nuclear Information System (INIS)

    Rej, D.J.; Davis, H.A.; Olson, J.C.

    1996-01-01

    We review research investigating the application of intense pulsed ion beams (IPIBs) for the surface treatment and coating of materials. The short range (0.1-10 μm) and high-energy density (1-50 J/cm 2 ) of these short-pulsed (≤ 1 μs) beams (with ion currents I = 5 - 50 kA, and energies E = 100 - 1000 keV) make them ideal to flash-heat a target surface, similar to the more familiar pulsed laser processes. IPIB surface treatment induces rapid melt and solidification at up to 10 10 K/s to cause amorphous layer formation and the production of non-equilibrium microstructures. At higher energy density the target surface is vaporized, and the ablated vapor is condensed as coatings onto adjacent substrates or as nanophase powders. Progress towards the development of robust, high-repetition rate IPIB accelerators is presented along with economic estimates for the cost of ownership of this technology

  12. Beta-induced Alfven-acoustic Eigenmodes in NSTX and DIII-D Driven by Beam Ions

    International Nuclear Information System (INIS)

    Gorelenkov, N.N.; Van Zeeland, M.A.; Berk, H.L.; Crocker, N.A.; Darrow, D.; Fredrickson, E.; Fu, G.-Y.; Heidbrink, W.W.; Menard, J.; Nazikian, R.

    2009-01-01

    Kinetic theory and experimental observations of a special class of energetic particle driven instabilities called here Beta-induced Alfven-Acoustic Eigenmodes (BAAE) are reported confirming previous results [N.N. Gorelenkov H.L. Berk, N.A. Crocker et. al. Plasma Phys. Control. Fusion 49 B371 (2007)] The kinetic theory is based on the ballooning dispersion relation where the drift frequency effects are retained. BAAE gaps are recovered in kinetic theory. It is shown that the observed certain low-frequency instabilities on DIII-D [J.L. Luxon, Nucl. Fusion 42 614 (2002)] and National Spherical Torus Experiment [M. Ono, S.M. Kaye, Y.-K M. Peng et. al., Nucl. Fusion 40 3Y 557 (2000)] are consistent with their identification as BAAEs. BAAEs deteriorated the fast ion confinement in DIII-D and can have a similar effect in next-step fusion plasmas, especially if excited together with multiple global Toroidicity-induced shear Alfven Eigenmode (TAE) instabilities. BAAEs can also be used to diagnose safety factor profiles, a technique known as magnetohydrodynamic spectroscopy

  13. Beta-induced Alfven-acousti Eigenmodes in NSTX and DIII-D Driven by Beam Ions

    Energy Technology Data Exchange (ETDEWEB)

    Gorelenkov, N. N.; Van Zeeland, M. A.; Berk, H. L.; Crocker, N. A.; Darrow, D.; Fredrickson, E.; Fu, G. Y.; Heidbrink, W. W.; Menard, J.; Nazikian, R.

    2009-03-06

    Kinetic theory and experimental observations of a special class of energetic particle driven instabilities called here Beta-induced Alfven-Acoustic Eigenmodes (BAAE) are reported confirming previous results [N.N. Gorelenkov H.L. Berk, N.A. Crocker et. al. Plasma Phys. Control. Fusion 49 B371 (2007)] The kinetic theory is based on the ballooning dispersion relation where the drift frequency effects are retained. BAAE gaps are recovered in kinetic theory. It is shown that the observed certain low-frequency instabilities on DIII-D [J.L. Luxon, Nucl. Fusion 42 614 (2002)] and National Spherical Torus Experiment [M. Ono, S.M. Kaye, Y.-K M. Peng et. al., Nucl. Fusion 40 3Y 557 (2000)] are consistent with their identification as BAAEs. BAAEs deteriorated the fast ion confinement in DIII-D and can have a similar effect in next-step fusion plasmas, especially if excited together with multiple global Toroidicity-induced shear Alfven Eigenmode (TAE) instabilities. BAAEs can also be used to diagnose safety factor profiles, a technique known as magnetohydrodynamic spectroscopy.

  14. Plasma ion sources and ion beam technology in microfabrications

    International Nuclear Information System (INIS)

    Ji, Lili

    2007-01-01

    For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area. As the dimensions of IC devices are scaled down, it has shown the need for new ion beam tools and new approaches to the fabrication of small-scale devices. In the meanwhile, nanotechnology has also deeply involved in material science research and bioresearch in recent years. The conventional FIB systems which utilize liquid gallium ion sources to achieve nanometer scale resolution can no longer meet the various requirements raised from such a wide application area such as low contamination, high throughput and so on. The drive towards controlling materials properties at nanometer length scales relies on the availability of efficient tools. In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications. An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification. This new instrument employs a mini-RF driven plasma source to generate focused ion beam with various ion species, a FEI two-lens electron (2LE) column for SEM imaging, and a five-axis manipulator system for sample positioning. An all-electrostatic two-lens column has been designed to focus the ion beam extracted from the source. Based on the Munro ion optics simulation, beam spot sizes as small as 100 nm can be achieved at beam energies between 5 to 35 keV if a 5 (micro)m-diameter extraction aperture is used. Smaller beam spot sizes can be obtained with smaller apertures at sacrifice of some beam current. The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance

  15. Heavy ion beams from the new Hungarian ECR ion source

    International Nuclear Information System (INIS)

    Biri, S.; Valek, A.; Ditroi, F.; Koivisto, H.; Arje, J.; Stiebing, K.; Schmidt, L.

    1998-01-01

    The first beams of highly charged ions in Hungary were obtained in fall of 1996. The new 14.5 GHz ECR ion source of ATOMKI produced beams of multiply charged ions with remarkable intensities at first experiments. Since then, numerous further developments were carried out. An external electrondonor electrode drastically increased the plasma density and, consequently, the intensity of highly charged ions. These upgrades concentrated mainly on beams from gaseous elements and were carried out by the ECRIS team of ATOMKI. Another series of experiments - ionising from solids - however, was done in the framework of an international collaboration. The first metal ion beam has been extracted from the ECRIS in November 1997 using the known method of Metal Ions from Volatile Compounds (MIVOC). The possibility to put the MIVOC chamber inside the ion source was also tested and the dosing regulation problem of metal vapours inside the ion source was solved. As a result, beams of more than 10 μA of highly charged Fe and Ni ions were produced. (author)

  16. Diffuse ions produced by electromagnetic ion beam instabilities

    International Nuclear Information System (INIS)

    Winske, D.; Leroy, M.M.

    1984-01-01

    The evolution of the electromagnetic ions beam instability driven by the reflected ion component backstreaming away from the earth's how shock into the foreshock region is studied by means computer simulation. The linear the quasi-linear states of the instability are found to be in good agreement with known results for the resonant model propagating parallel to the beam along the magnetic field and with theory developed in this paper for the nonresonant mode, which propagates antiparallel to the beam direction. The quasi-linear stage, which produces large amplitude 8Bapprox.B, sinusoidal transverse waves and ''intermediate'' ion distribution, is terminated by a nonlinear phase in which strongly nonlinear, compressive waves and ''diffuse'' ion distributions are produced. Additional processes by which the diffuse ions are accelerated to observed high energies are not addressed. The results are discussed in terms of the ion distributions and hydromagnetic waves observed in the foreshock of the earth's bow shock and of interplanetary shocks

  17. Consideration of beam plasma ion-source

    International Nuclear Information System (INIS)

    Sano, Fumimichi; Kusano, Norimasa; Ishida, Yoshihiro; Ishikawa, Junzo; Takagi, Toshinori

    1976-01-01

    Theoretical and experimental analyses and their comparison were made on the plasma generation and on the beam extraction for the beam plasma ion-source. The operational principle and the structure of the ion-source are explained in the first part. Considerations are given on the electron beam-plasma interaction and the resulting generation of high frequency or microwaves which in turn increases the plasma density. The flow of energy in this system is also explained in the second part. The relation between plasma density and the imaginary part of frequency is given by taking the magnetic flux density, the electron beam energy, and the electron beam current as parameters. The relations between the potential difference between collector and drift tube and the plasma density or the ion-current are also given. Considerations are also given to the change of the plasma density due to the change of the magnetic flux density at drift tube, the change of the electron beam energy, and the change of the electron beam current. The third part deals with the extraction characteristics of the ion beam. The structure of the multiple-aperture electrode and the relation between plasma density and the extracted ion current are explained. (Aoki, K.)

  18. Colliding-beams polarized ion source

    International Nuclear Information System (INIS)

    Trainor, T.A.; Douglas, J.G.; Badt, D.; Christiensen, C.; Herron, A.; Leach, D.; Olsen, J.; Osborne, J.L.; Zeps, V.

    1985-01-01

    This ion source was to be purchased from ANAC, Inc., a New Zealand-based supplier of beam optics hardware and atomic beam polarized ion sources in December 1982. Shortly before scheduled delivery ANAC went into receivership. During 1983 little work was done on the project as various steps were taken by us, first to get the ion source completed at ANAC, and then, failing that, to obtain the existing parts. In early 1984 we began work to finish the ion source in Seattle. The project is nearly complete, and this article presents progress to date. 2 refs

  19. Frequency threshold for ion beam formation in expanding RF plasma

    Science.gov (United States)

    Chakraborty Thakur, Saikat; Harvey, Zane; Biloiu, Ioana; Hansen, Alex; Hardin, Robert; Przybysz, William; Scime, Earl

    2008-11-01

    We observe a threshold frequency for ion beam formation in expanding, low pressure, argon helicon plasma. Mutually consistent measurements of ion beam energy and density relative to the background ion density obtained with a retarding field energy analyzer and laser induced fluorescence indicate that a stable ion beam of 15 eV appears for source frequencies above 11.5 MHz. Reducing the frequency increases the upstream beam amplitude. Downstream of the expansion region, a clear ion beam is seen only for the higher frequencies. At lower frequencies, large electrostatic instabilities appear and an ion beam is not observed. The upstream plasma density increases sharply at the same threshold frequency that leads to the appearance of a stable double layer. The observations are consistent with the theoretical prediction that downstream electrons accelerated into the source by the double layer lead to increased ionization, thus balancing the higher loss rates upstream [1]. 1. M. A. Lieberman, C. Charles and R. W. Boswell, J. Phys. D: Appl. Phys. 39 (2006) 3294-3304

  20. Beam Angular Divergence Effects in Ion Implantation

    International Nuclear Information System (INIS)

    Horsky, T. N.; Hahto, S. K.; Bilbrough, D. G.; Jacobson, D. C.; Krull, W. A.; Goldberg, R. D.; Current, M. I.; Hamamoto, N.; Umisedo, S.

    2008-01-01

    An important difference between monomer ion beams and heavy molecular beams is a significant reduction in beam angular divergence and increased on-wafer angular accuracy for molecular beams. This advantage in beam quality stems from a reduction in space-charge effects within the beam. Such improved angular accuracy has been shown to have a significant impact on the quality and yield of transistor devices [1,12]. In this study, B 18 H x + beam current and angular divergence data collected on a hybrid scanned beam line that magnetically scans the beam across the wafer is presented. Angular divergence is kept below 0.5 deg from an effective boron energy of 200 eV to 3000 eV. Under these conditions, the beam current is shown analytically to be limited by space charge below about 1 keV, but by the matching of the beam emittance to the acceptance of the beam line above 1 keV. In addition, results of a beam transport model which includes variable space charge compensation are presented, in which a drift mode B 18 H x + beam is compared to an otherwise identical boron beam after deceleration. Deceleration is shown to introduce significant space-charge blow up resulting in a large on-wafer angular divergence. The divergence effects introduced by wafer charging are also discussed.

  1. Improving depth resolutions in positron beam spectroscopy by concurrent ion-beam sputtering

    Science.gov (United States)

    John, Marco; Dalla, Ayham; Ibrahim, Alaa M.; Anwand, Wolfgang; Wagner, Andreas; Böttger, Roman; Krause-Rehberg, Reinhard

    2018-05-01

    The depth resolution of mono-energetic positron annihilation spectroscopy using a positron beam is shown to improve by concurrently removing the sample surface layer during positron beam spectroscopy. During ion-beam sputtering with argon ions, Doppler-broadening spectroscopy is performed with energies ranging from 3 keV to 5 keV allowing for high-resolution defect studies just below the sputtered surface. With this technique, significantly improved depth resolutions could be obtained even at larger depths when compared to standard positron beam experiments which suffer from extended positron implantation profiles at higher positron energies. Our results show that it is possible to investigate layered structures with a thickness of about 4 microns with significantly improved depth resolution. We demonstrated that a purposely generated ion-beam induced defect profile in a silicon sample could be resolved employing the new technique. A depth resolution of less than 100 nm could be reached.

  2. Thickness-modulated tungsten-carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields.

    Science.gov (United States)

    Serrano, Ismael García; Sesé, Javier; Guillamón, Isabel; Suderow, Hermann; Vieira, Sebastián; Ibarra, Manuel Ricardo; De Teresa, José María

    2016-01-01

    We report efficient vortex pinning in thickness-modulated tungsten-carbon-based (W-C) nanostructures grown by focused ion beam induced deposition (FIBID). By using FIBID, W-C superconducting films have been created with thickness modulation properties exhibiting periodicity from 60 to 140 nm, leading to a strong pinning potential for the vortex lattice. This produces local minima in the resistivity up to high magnetic fields (2.2 T) in a broad temperature range due to commensurability effects between the pinning potential and the vortex lattice. The results show that the combination of single-step FIBID fabrication of superconducting nanostructures with built-in artificial pinning landscapes and the small intrinsic random pinning potential of this material produces strong periodic pinning potentials, maximizing the opportunities for the investigation of fundamental aspects in vortex science under changing external stimuli (e.g., temperature, magnetic field, electrical current).

  3. Rotating light ion beam-plasma system in inertial confinement fusion

    International Nuclear Information System (INIS)

    Murakami, H.; Okada, T.

    1997-01-01

    The stabilizing mechanism of filamentation instability in light ion beam propagation is studied numerically by using a particle-in-cell code. Rotating light ion beam scheme has been proposed for the light ion beam propagation. The filamentation instability is stabilized by the external magnetic field which is induced by the rotating light ion beams. From a dispersion relation, linear growth rates of filamentation instabilities are obtained in a light ion beam-plasma system with an external magnetic field. The theory and simulation comparisons illustrate the results. (author)

  4. Accelerated ion beam research at ATOMKI

    International Nuclear Information System (INIS)

    Kiss, A.Z.

    2009-01-01

    The paper summarizes the studies on accelerated ion beams at ATOMKI and their technical background, their use from chemical analysis to biological, medical, geological, archaeological applications, their advance from material science to micromachining. (TRA)

  5. Intense pulsed ion beams for fusion applications

    International Nuclear Information System (INIS)

    Humphries, S. Jr.

    1980-04-01

    The subject of this review paper is the field of intense pulsed ion beam generation and the potential application of the beams to fusion research. Considerable progress has been made over the past six years. The ion injectors discussed utilize the introduction of electrons into vacuum acceleration gaps in conjunction with high voltage pulsed power technology to achieve high output current. Power levels from injectors exceeding 1000 MW/cm 2 have been obtained for pulse lengths on the order of 10 -7 sec. The first part of the paper treats the physics and technology of intense ion beams. The second part is devoted to applications of intense ion beams in fusion research. A number of potential uses in magnetic confinement systems have been proposed

  6. Ion beam techniques in arts and archaeology

    International Nuclear Information System (INIS)

    Qin Guangyong; Pan Xianjia; Sun Zhongtian; Gao Zhengyao

    1991-01-01

    The ion beam techniques used in studies of arts and archaeology are compared with other analytical techniques. Some examples are specially selected to illustrate the achievements and trends of the techniques in this field

  7. Radioactive heavy ion secondary beams

    International Nuclear Information System (INIS)

    Bimbot, R.

    1987-01-01

    The production of secondary radioactive beams at GANIL using the LISE spectrometer is reviewed. The experimental devices, and secondary beam characteristics are summarized. Production of neutron rich secondary beams was studied for the systems Ar40 + Be at 44 MeV/u, and 018 + Be at 45 and 65 MeV/u. Partial results were also obtained for the system Ne22 + Ta at 45 MeV/u. Experiments using secondary beams are classified into two categories: those which correspond to fast transfer of nuclei from the production target to a well shielded observation point; and those in which the radioactive beam interacts with a secondary target

  8. Applications of focused ion beams in microelectronics

    International Nuclear Information System (INIS)

    Broughton, C.; Beale, M.I.J.; Deshmukh, V.G.I.

    1986-04-01

    We present the conclusions of the RSRE programme on the application of focused ion beams in microelectronics and review the literature published in this field. We discuss the design and performance of focused beam implanters and the viability of their application to semiconductor device fabrication. Applications in the areas of lithography, direct implantation and micromachining are discussed in detail. Comparisons are made between the use of focused ion beams and existing techniques for these fabrication processes with a strong emphasis placed on the relative throughputs. We present results on a novel spot size measurement technique and the effect of beam heating on resist. We also present the results of studies into implantation passivation of resist to oxygen plasma attack as basis for a dry development lithography scheme. A novel lithography system employing flood electron exposure from a photocathode which is patterned by a focused ion beam which can also be used to repair mask defects is considered. (author)

  9. Radioactive ion beam facilities at INFN LNS

    International Nuclear Information System (INIS)

    Rifuggiato, D; Calabretta, L; Celona, L; Chines, F; Cosentino, L; Cuttone, G; Finocchiaro, P; Pappalardo, A; Re, M; Rovelli, A

    2011-01-01

    Radioactive ion beams are produced at INFN- Laboratori Nazionali del Sud (LNS) by means of the two operating accelerators, the Tandem and the Superconducting Cyclotron (CS), originally designed to accelerate stable beams. Both the ISOL (Isotope Separation On Line) and the IFF (In-Flight Fragmentation) methods are exploited to produce RIBs in two different ways at different energies: in the first case, the Cyclotron is the primary accelerator and the Tandem accelerates the secondary beams, while in the second case radioactive fragments are produced by the Cyclotron beam in a thin target with energies comparable to the primary beam energy. The ISOL facility is named EXCYT (Exotics at the Cyclotron and Tandem) and was commissioned in 2006, when the first radioactive beam ( 8 Li) has been produced. The IFF installation is named FRIBs (in Flight Radioactive Ion Beams), and it has started to produce radioactive beams in 2001, placing a thin target in the extraction beam line of the Cyclotron. The development of both facilities to produce and accelerate radioactive ion beams at LNS, is briefly described, with some details on the future prospects that are presently under consideration or realization.

  10. Uses of laser optical pumping to produce polarized ion beams

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1983-01-01

    Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H - or 3 He - ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams

  11. LET effects of high energy ion beam irradiation on polysilanes

    Energy Technology Data Exchange (ETDEWEB)

    Seki, Shu; Kanzaki, Kenichi; Tagawa, Seiichi; Yoshida, Yoichi [Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research; Kudoh, Hisaaki; Sugimoto, Masaki; Sasuga, Tsuneo; Seguchi, Tadao; Shibata, Hiromi

    1997-03-01

    Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)

  12. Beam modulation for heavy ion radiotherapy

    International Nuclear Information System (INIS)

    Kanai, T.; Minohara, S.; Sudou, M.

    1993-01-01

    The first clinical trial of heavy ion radiation therapy is scheduled in 1994 by using the heavy ion medical accelerator in Chiba (HIMAC). In order to start the clinical trial, first, it is necessary to know the physical characteristics of high energy heavy ions in human bodies, for example, dose and linear energy transfer (LET) distribution. Also the knowledge on the biological effectiveness of heavy ions is required. Based on these biophysical properties of heavy ions, monoenergetic heavy ion beam should be modulated so as to make the spread Bragg peak suitable to heavy ion radiation therapy. In order to establish a methodology to obtain the most effective spread Bragg peak for heavy ion radiation therapy, a heavy ion irradiation port at the RIKEN ring cyclotron facility was constructed. By using a 135 MeV/u carbon beam, the biophysical properties of the heavy ions were investigated, and a range modulator was designed to have uniform biological response in the spread Bragg peak. The physical and biological rationality of the spread Bragg peak were investigated. The dose, LET and biological effect of a monoenergetic heavy ion beam, the design of the range modulator, and the distributions of LET and biological dose for the spread Bragg peak are reported. (K.I.)

  13. Beam dynamics in heavy ion induction LINACS

    International Nuclear Information System (INIS)

    Smith, L.

    1981-10-01

    Interest in the use of an induction linac to accelerate heavy ions for the purpose of providing the energy required to initiate an inertially confined fusion reaction has stimulated a theoretical effort to investigate various beam dynamical effects associated with high intensity heavy ion beams. This paper presents a summary of the work that has been done so far; transverse, longitudinal and coupled longitudinal transverse effects are discussed

  14. Calculation of ballistic focusing of ion beams

    International Nuclear Information System (INIS)

    Astrelin, V.T.; Syresin, E.M.

    1984-01-01

    The motion of ions passing from the homogeneous magnetic field into a conical one is treated analytically in paraxial approximation. Further ions transform into neutral particles at the recharging target which is placed in the conical area of field. The optimal conditions for maximum compression of the beams of neutral particles are investigated. An influence of the initial angular spread on the beam compression is analysed. The computation results together with the those of analytical treatment are presented

  15. Ion beam processing of advanced electronic materials

    International Nuclear Information System (INIS)

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B.

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases

  16. Construction of ion beam pulse radiolysis system

    Energy Technology Data Exchange (ETDEWEB)

    Chitose, Norihisa; Katsumura, Yosuke; Domae, Masafumi; Ishigure, Kenkichi; Murakami, Takeshi [Tokyo Univ. (Japan)

    1996-10-01

    An ion beam pulse radiolysis system has been constructed at HIMAC facility. Ion beam of 24 MeV He{sup 2+} with the duration longer than 1 {mu}s is available for irradiation. Three kinds of aqueous solutions, (C{sub 6}H{sub 5}){sub 2}CO, NaHCO{sub 3} and KSCN, were irradiated and the absorption signals were observed. (author)

  17. Intense ion beam research at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

    1992-01-01

    Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long-pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle energy distributions in large, dense, ignited tokamaks such as ITER

  18. Intense ion beam research at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

    1993-01-01

    Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle distributions in large, dense, ignited tokamaks such as ITER

  19. Optical refractive index and static permittivity of mixed Zr-Si oxide thin films prepared by ion beam induced CVD

    Energy Technology Data Exchange (ETDEWEB)

    Ferrer, F.J. [Centro Nacional de Aceleradores, Av. Thomas A. Edison, 7, 41092 Sevilla (Spain)], E-mail: fjferrer@us.es; Frutos, F. [E.T.S. de Ingenieria Informatica, Avda. Reina Mercedes, s/n, 41012 Sevilla (Spain); Garcia-Lopez, J. [Centro Nacional de Aceleradores, Av. Thomas A. Edison, 7, 41092 Sevilla (Spain); Gonzalez-Elipe, A.R.; Yubero, F. [Insituto de Ciencia de Materiales de Sevilla, c/ Americo vespucio, no. 49, 41092 Sevilla (Spain)

    2007-12-03

    Mixed oxides Zr{sub x}Si{sub 1-x}O{sub 2} (0 < x < 1) thin films have been prepared at room temperature by decomposition of (CH{sub 3}CH{sub 2}O){sub 3}SiH and Zr[OC(CH{sub 3}){sub 3}]{sub 4} volatile precursors induced by mixtures of O{sub 2}{sup +} and Ar{sup +} ions. The films were flat and amorphous independently of the Si/Zr ratio and did not present phase segregation of the pure single oxides (SiO{sub 2} and ZrO{sub 2}). A 10-23 at.% of H and 1-5 at.% of C atoms remained incorporated in the films depending on the mixture ratio of the Si and Zr precursors and the composition of the bombarding gas used during the deposition process. These impurities are mainly forming hydroxyl and carboxylic groups. Optical refractive index and static permittivity of the films were determined by reflection NIR-Vis spectroscopy and C-V electrical characterization, respectively. It is found that the refractive index increases non-linearly from 1.45 to 2.10 as the Zr content in the thin films increases. The static permittivity also increases non-linearly from {approx} 4 for pure SiO{sub 2} to {approx} 15 for pure ZrO{sub 2}. Optical and electrical characteristics of the films are justified by their impurity content and the available theories.

  20. National Centre for Radioactive Ion Beams (NCRIB)

    International Nuclear Information System (INIS)

    Chintalapudi, S.N.

    1999-01-01

    A dedicated National Centre for RIB (NCRIB) proposed discussed at several forums is presented. The production of (RIB) radioactive ion beams and applications of beams leading to competitive studies in nuclear structure, nuclear reactions, condensed matter, bio-science and radioactive isotope production etc. are mentioned

  1. Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

    International Nuclear Information System (INIS)

    Fiala, J.; Armour, D. G.; Berg, J. A. van der; Holmes, A. J. T.; Goldberg, R. D.; Collart, E. H. J.

    2006-01-01

    The effective transport of high current, positive ion beams at low energies in ion implanters requires the a high level of space charge compensation. The self-induced or forced introduction of electrons is known to result in the creation of a so-called beam plasma through which the beam propagates. Despite the ability of beams at energies above about 3-5 keV to create their own neutralising plasmas and the development of highly effective, plasma based neutralising systems for low energy beams, very little is known about the nature of beam plasmas and how their characteristics and capabilities depend on beam current, beam energy and beamline pressure. These issues have been addressed in a detailed scanning Langmuir probe study of the plasmas created in beams passing through the post-analysis section of a commercial, high current ion implanter. Combined with Faraday cup measurements of the rate of loss of beam current in the same region due to charge exchange and scattering collisions, the probe data have provided a valuable insight into the nature of the slow ion and electron production and loss processes. Two distinct electron energy distribution functions are observed with electron temperatures ≥ 25 V and around 1 eV. The fast electrons observed must be produced in their energetic state. By studying the properties of the beam plasma as a function of the beam and beamline parameters, information on the ways in which the plasma and the beam interact to reduce beam blow-up and retain a stable plasma has been obtained

  2. Modification of graphene by ion beam

    Science.gov (United States)

    Gawlik, G.; Ciepielewski, P.; Jagielski, J.; Baranowski, J.

    2017-09-01

    Ion induced defect generation in graphene was analyzed using Raman spectroscopy. A single layer graphene membrane produced by chemical vapor deposition (CVD) on copper foil and then transferred on glass substrate was subjected to helium, carbon, nitrogen, argon and krypton ions bombardment at energies from the range 25 keV to 100 keV. A density of ion induced defects and theirs mean size were estimated by using Raman measurements. Increasing number of defects generated by ion with increase of ion mass and decrease of ion energy was observed. Dependence of ion defect efficiency (defects/ion) on ion mass end energy was proportional to nuclear stopping power simulated by SRIM. No correlation between ion defect efficiency and electronic stopping power was observed.

  3. A synchronous beam sweeper for heavy ions

    International Nuclear Information System (INIS)

    Bogaty, J.M.

    1989-01-01

    The Argonne Tandem Linac Accelerator System (ATLAS) facility at Argonne National Laboratory provides a wide range of accelerated heavy ions from the periodic table. Frequently, the beam delivery rate of 12 MHz is too fast for the type of experiment on line. Reaction by-products from a target bombardment may have a decay interval much longer than the dead time between beam bunches. To prevent data from being corrupted by incoming ions a beam sweeper was developed which synchronously eliminates selected beam bunches to suit experimental needs. As the SWEEPER is broad band (DC to 6 MHz) beam delivery rates can be instantaneously changed. Ion beam bunches are selectively kicked out by an electrostatic dipole electrode pulsed to 2 kVDC. The system has been used for almost three years with several hundred hours of operating time logged to date. Beam bunch delivery rates of 6 MHz down to 25 kHz have been provided. Since this is a non-resonant system any beam delivery rate from 6 MHz down to zero can be set. In addition, burst modes have been used where beam is supplied in 12 MHz bursts and then shut down for a period of time set by the user. 3 figs

  4. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-05-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

  5. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

    2014-01-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

  6. Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

    International Nuclear Information System (INIS)

    Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W.

    2005-01-01

    The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

  7. Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

    Energy Technology Data Exchange (ETDEWEB)

    Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W. (eds.)

    2005-07-01

    The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

  8. A pencil beam algorithm for helium ion beam therapy

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, Hermann; Stroebele, Julia; Schreiner, Thomas; Hirtl, Albert; Georg, Dietmar [Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); PEG MedAustron, 2700 Wiener Neustadt (Austria); Department of Nuclear Medicine, Medical University of Vienna, 1090 Vienna (Austria); Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria)

    2012-11-15

    Purpose: To develop a flexible pencil beam algorithm for helium ion beam therapy. Dose distributions were calculated using the newly developed pencil beam algorithm and validated using Monte Carlo (MC) methods. Methods: The algorithm was based on the established theory of fluence weighted elemental pencil beam (PB) kernels. Using a new real-time splitting approach, a minimization routine selects the optimal shape for each sub-beam. Dose depositions along the beam path were determined using a look-up table (LUT). Data for LUT generation were derived from MC simulations in water using GATE 6.1. For materials other than water, dose depositions were calculated by the algorithm using water-equivalent depth scaling. Lateral beam spreading caused by multiple scattering has been accounted for by implementing a non-local scattering formula developed by Gottschalk. A new nuclear correction was modelled using a Voigt function and implemented by a LUT approach. Validation simulations have been performed using a phantom filled with homogeneous materials or heterogeneous slabs of up to 3 cm. The beams were incident perpendicular to the phantoms surface with initial particle energies ranging from 50 to 250 MeV/A with a total number of 10{sup 7} ions per beam. For comparison a special evaluation software was developed calculating the gamma indices for dose distributions. Results: In homogeneous phantoms, maximum range deviations between PB and MC of less than 1.1% and differences in the width of the distal energy falloff of the Bragg-Peak from 80% to 20% of less than 0.1 mm were found. Heterogeneous phantoms using layered slabs satisfied a {gamma}-index criterion of 2%/2mm of the local value except for some single voxels. For more complex phantoms using laterally arranged bone-air slabs, the {gamma}-index criterion was exceeded in some areas giving a maximum {gamma}-index of 1.75 and 4.9% of the voxels showed {gamma}-index values larger than one. The calculation precision of the

  9. High Precision Beam Diagnostics for Ion Thrusters

    NARCIS (Netherlands)

    Van Reijen, B.; Koch, N.; Lazurenko, A.; Weis, S.; Schirra, M.; Genovese, A.; Haderspeck, J.; Gill, E.K.A.

    2011-01-01

    The Thales diagnostic equipment for ion beam characterization consists of a gridded and single orifice retarding potential analyzer (RPA) and an energy selective mass spectrometer (ESMS). During the development phase of these sensors considerable effort was put into the removal of ion optical

  10. Ion beam source construction and applications

    International Nuclear Information System (INIS)

    Torab, S.I.R.

    2011-01-01

    The aim of this thesis is to improve the performance of a new shape cold cathode Penning ion source to be suitable for some applications. In this work, many trials have been made to reach the optimum dimensions of the new shape of cold Molybdenum cathode Penning ion source with radial extraction. The high output ion beam can be extracted in a direction transverse to the discharge region. The new shape cold cathode Penning ion source consists of Copper cylindrical hollow anode of 40 mm length, 12 mm diameter and has two similar cone ends of 15 mm length, 22 mm upper cone diameter and 12 mm bottom cone diameter. The two movable Molybdenum cathodes are fixed in Perspex insulator and placed symmetrically at two ends of the anode. The Copper emission disc of 2 mm thickness and has central aperture of different diameters is placed at the middle of the anode for ion beam exit. The inner surface of the emission disc is isolated from the anode by Perspex insulator except an area of diameter 5 mm to confine the electrical discharge in this area. A movable Faraday cup is placed at different distances from the emission electrode aperture and used to collect the output ion beam from the ion source. The working gases are admitted to the ion source through a hole in the anode via a needle valve which placed between the gas cylinder and the ion source. The optimum anode- cathode distance, the uncovered area diameter of the emission disc, the central aperture diameter of the emission electrode, the distance between emission electrode and Faraday cup have been determined using Argon gas. The optimum distances of the ion source were found to be equal to 6 mm, 5 mm, 2.5 mm, and 3 cm respectively where stable discharge current and maximum output ion beam current at low discharge current can be obtained. The discharge characteristics, ion beam characteristics, and the efficiency of the ion source have been measured at different operating conditions and different gas pressures using

  11. Experimental studies with radioactive ion beams

    International Nuclear Information System (INIS)

    Sastry, D.L.; Sree Krishna Murty, G.; Chandrasekhar Rao, M.V.S.

    1991-01-01

    The sources of information presented are essentially taken from the papers reported at several international seminars and those appeared in the Journal of Nuclear Instruments and Methods in Physics Research. Production and usage of radioactive ion beams (RIB) in research have received the attention of scientists all over the world during the past six years. The first radioactive ion beams ( 19 Ne) were produced at Bevalac for the purpose of medical research using a primary beam of energy 800 MeV/a.m.u. (author). 19 refs., 2 figs., 3 tabs

  12. Barium ion beam. Annual progress report

    International Nuclear Information System (INIS)

    Lazar, N.; Dandl, R.; Rynn, N.; Wickham, M.

    1985-01-01

    The barium ion beam Zeeman diagnostic is an in situ nonperturbing diagnostic designed to measure both the plasma electric and magnetic fields in devices such as STM and EBT. The diagnostic satisfies the requirements of high precision, spatial resolution and nonperturbation of the plasma. The technique uses resonance absorption of light from a single moded laser in a beam of energetic barium ions to measure the Zeeman effect in the absorption spectrum (to measure changes in the magnetic field) and to observe the changes in beam velocity by the Doppler shift of the absorption lines

  13. The role of space charge compensation for ion beam extraction and ion beam transport (invited)

    International Nuclear Information System (INIS)

    Spädtke, Peter

    2014-01-01

    Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation

  14. Fast ion beam-laser interactions

    International Nuclear Information System (INIS)

    Berry, H.G.; Young, L.; Engstroem, L.; Hardis, J.E.; Somerville, L.P.; Ray, W.J.; Kurtz, C.

    1985-01-01

    The authors are using collinear laser excitation of fast ion beams to study a number of atomic structure problems. The problems include the determination of fine and hyperfine structure in light positive and negative ions, plus measurements of absolute wavelengths of light from two-electron ions. In addition the authors intend to use a similar experimental arrangement to study excitation and decay of high Rydberg states first in the absence of fields and then in crossed electric and magnetic fields

  15. Heavy-Ion-Induced Electronic Desorption of Gas from Metals

    CERN Document Server

    Molvik, A W; Mahner, E; Kireeff Covo, M; Bellachioma, M C; Bender, M; Bieniosek, F M; Hedlund, E; Krämer, A; Kwan, J; Malyshev, O B; Prost, L; Seidl, P A; Westenskow, G; Westerberg, L

    2007-01-01

    During heavy-ion operation in several particle accelerators worldwide, dynamic pressure rises of orders of magnitude were triggered by lost beam ions that bombarded the vacuum chamber walls. This ion-induced molecular desorption, observed at CERN, GSI, and BNL, can seriously limit the ion beam lifetime and intensity of the accelerator. From dedicated test stand experiments we have discovered that heavy-ion-induced gas desorption scales with the electronic energy loss (dEe/dx) of the ions slowing down in matter; but it varies only little with the ion impact angle, unlike electronic sputtering.

  16. Ion beam heating of thin silicon membranes

    International Nuclear Information System (INIS)

    Tissot, P.E.; Hart, R.R.

    1993-01-01

    For silicon membranes irradiated by an ion beam in a vacuum environment, such as the masks used for ion beam lithography and the membranes used for thin film self-annealing, the heat transfer modes are radiation and limited conduction through the thin membrane. The radiation component depends on the total hemispherical emissivity which varies with the thickness and temperature of the membrane. A semiempirical correlation for the absorption coefficient of high resistivity silicon was derived and the variation of the total emissivity with temperature was computed for membranes with thicknesses between 0.1 and 10 μm. Based on this result, the temperatures reached during exposure to ion beams of varying intensities were computed. A proper modeling of the emissivity is shown to be important for beam heating of thin silicon membranes. (orig.)

  17. A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

    Science.gov (United States)

    Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L. D.

    2012-02-01

    DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli ( E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

  18. A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

    International Nuclear Information System (INIS)

    Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L.D.

    2012-01-01

    DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli (E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

  19. Multi-scale approach to radiation damage induced by ion beams: complex DNA damage and effects of thermal spikes

    International Nuclear Information System (INIS)

    Surdutovich, E.; Yakubovich, A.V.; Solov'yov, A.V.; Surdutovich, E.; Yakubovich, A.V.; Solov'yov, A.V.

    2010-01-01

    We present the latest advances of the multi-scale approach to radiation damage caused by irradiation of a tissue with energetic ions and report the calculations of complex DNA damage and the effects of thermal spikes on biomolecules. The multi-scale approach aims to quantify the most important physical, chemical, and biological phenomena taking place during and following irradiation with ions and provide a better means for clinically-necessary calculations with adequate accuracy. We suggest a way of quantifying the complex clustered damage, one of the most important features of the radiation damage caused by ions. This quantification allows the studying of how the clusterization of DNA lesions affects the lethality of damage. We discuss the first results of molecular dynamics simulations of ubiquitin in the environment of thermal spikes, predicted to occur in tissue for a short time after an ion's passage in the vicinity of the ions' tracks. (authors)

  20. Light ion beam transport research at NRL

    International Nuclear Information System (INIS)

    Hinshelwood, D.D.; Boller, J.R.; Cooperstein, G.

    1996-01-01

    Transport of light ion beams through low-pressure background gas is under investigation at NRL in support of the light-ion ICF program at Sandia National Laboratories. Scaling experiments and the field solver/orbit code ATHETA have been used to design and construct a focusing, extraction applied-B diode for transport experiments. An active anode source has been developed to provide a high proton fraction in the ion beam and a fast ion turn-on time. A very sensitive Zeeman diagnostic is being developed to determine the net current distribution in the beam/transport system. Both analytical and numerical techniques using several codes are being applied to transport modeling, leading to the capability of full system studies. (author). 1 tab., 5 figs., 10 refs

  1. Light ion beam transport research at NRL

    Energy Technology Data Exchange (ETDEWEB)

    Hinshelwood, D D; Boller, J R; Cooperstein, G [Naval Research Lab., Washington, DC (United States). Plasma Physics Div.; and others

    1997-12-31

    Transport of light ion beams through low-pressure background gas is under investigation at NRL in support of the light-ion ICF program at Sandia National Laboratories. Scaling experiments and the field solver/orbit code ATHETA have been used to design and construct a focusing, extraction applied-B diode for transport experiments. An active anode source has been developed to provide a high proton fraction in the ion beam and a fast ion turn-on time. A very sensitive Zeeman diagnostic is being developed to determine the net current distribution in the beam/transport system. Both analytical and numerical techniques using several codes are being applied to transport modeling, leading to the capability of full system studies. (author). 1 tab., 5 figs., 10 refs.

  2. Negative ion beam extraction in ROBIN

    International Nuclear Information System (INIS)

    Bansal, Gourab; Gahlaut, Agrajit; Soni, Jignesh; Pandya, Kaushal; Parmar, Kanu G.; Pandey, Ravi; Vuppugalla, Mahesh; Prajapati, Bhavesh; Patel, Amee; Mistery, Hiren; Chakraborty, Arun; Bandyopadhyay, Mainak; Singh, Mahendrajit J.; Phukan, Arindam; Yadav, Ratnakar K.; Parmar, Deepak

    2013-01-01

    Highlights: ► A RF based negative hydrogen ion beam test bed has been set up at IPR, India. ► Ion source has been successfully commissioned and three campaigns of plasma production have been carried out. ► Extraction system (35 kV) has been installed and commissioning has been initiated. Negative ion beam extraction is immediate milestone. -- Abstract: The RF based single driver −ve ion source experiment test bed ROBIN (Replica Of BATMAN like source in INDIA) has been set up at Institute for Plasma Research (IPR), India in a technical collaboration with IPP, Garching, Germany. A hydrogen plasma of density 5 × 10 12 cm −3 is expected in driver region of ROBIN by launching 100 kW RF power into the driver by 1 MHz RF generator. The cesiated source is expected to deliver a hydrogen negative ion beam of 10 A at 35 kV with a current density of 35 mA/cm 2 as observed in BATMAN. In first phase operation of the ROBIN ion source, a hydrogen plasma has been successfully generated (without extraction system) by coupling 80 kW RF input power through a matching network with high power factor (cos θ > 0.8) and different plasma parameters have been measured using Langmuir probes and emission spectroscopy. The plasma density of 2.5 × 10 11 cm −3 has been measured in the extraction region of ROBIN. For negative hydrogen ion beam extraction in second phase operation, extraction system has been assembled and installed with ion source on the vacuum vessel. The source shall be first operated in volume mode for negative ion beam extraction. The commissioning of the source with high voltage power supply has been initiated

  3. Detection systems for radioactive ion beams

    International Nuclear Information System (INIS)

    Savajols, H.

    2002-01-01

    Two main methods are used to produce radioactive ion beams: -) the ISOL method (isotope separation on-line) in which the stable beam interacts with a thick target, the reaction products diffuse outside the target and are transferred to a source where they are ionized, a mass separator and a post-accelerator drive the selected radioactive ions to the right energy; -) the in-flight fragmentation method in which the stable beam interacts with a thin target, the reaction products are emitted from the target with a restricted angular distribution and a velocity close to that of the incident beam, the experimenter has to take advantage from the reaction kinetics to get the right particle beam. Characteristic time is far longer with the ISOL method but the beam intensity is much better because of the use of a post-accelerator. In both cases, the beam intensity is lower by several orders of magnitude than in the case of a stable beam. This article presents all the constraints imposed by radioactive beams to the detection systems of the reaction products and gives new technical solutions according to the type of nuclear reaction studied. (A.C.)

  4. Proposed LLNL electron beam ion trap

    International Nuclear Information System (INIS)

    Marrs, R.E.; Egan, P.O.; Proctor, I.; Levine, M.A.; Hansen, L.; Kajiyama, Y.; Wolgast, R.

    1985-01-01

    The interaction of energetic electrons with highly charged ions is of great importance to several research fields such as astrophysics, laser fusion and magnetic fusion. In spite of this importance there are almost no measurements of electron interaction cross sections for ions more than a few times ionized. To address this problem an electron beam ion trap (EBIT) is being developed at LLNL. The device is essentially an EBIS except that it is not intended as a source of extracted ions. Instead the (variable energy) electron beam interacting with the confined ions will be used to obtain measurements of ionization cross sections, dielectronic recombination cross sections, radiative recombination cross sections, energy levels and oscillator strengths. Charge-exchange recombinaion cross sections with neutral gasses could also be measured. The goal is to produce and study elements in many different charge states up to He-like xenon and Ne-like uranium. 5 refs., 2 figs

  5. Ion acceleration in modulated electron beams

    International Nuclear Information System (INIS)

    Bonch-Osmolovskij, A.G.; Dolya, S.N.

    1977-01-01

    A method of ion acceleration in modulated electron beams is considered. Electron density and energy of their rotational motion are relatively low. However the effective ion-accelerating field is not less than 10 MeV/m. The electron and ion numbers in an individual bunch are also relatively small, although the number of produced bunches per time unit is great. Some aspects of realization of the method are considered. Possible parameters of the accelerator are given. At 50 keV electron energy and 1 kA beam current a modulation is realized at a wave length of 30 cm. The ion-accelerating field is 12 MeV/m. The bunch number is 2x10 3 in one pulse at a gun pulse duration of 2 μs. With a pulse repetition frequency of 10 2 Hz the number of accelerated ions can reach 10 13 -10 14 per second

  6. Nitridation of vanadium by ion beam irradiation

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  7. Reaching for highest ion beam intensities through laser ion acceleration and beam compression

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, Dennis; Brabetz, Christian; Blazevic, Abel; Bagnoud, Vincent; Weih, Simon [GSI Helmholtzzentrum fuer Schwerionenforschung (Germany); Jahn, Diana; Ding, Johannes; Roth, Markus [TU Darmstadt (Germany); Kroll, Florian; Schramm, Ulrich; Cowan, Tom [Helmholtzzentrum Dresden Rossendorf (Germany); Collaboration: LIGHT-Collaboration

    2016-07-01

    Laser ion acceleration provides access to ion sources with unique properties. To use these capabilities the LIGHT collaboration (Laser Ion Generation Handling and Transport) was founded. The aim of this collaboration is the beam transport and manipulation of laser accelerated ions with conventional accelerator structures. Therefor a dedicated beam line has been build up at GSI Helmholtzzentrum fuer Schwerionenforschung. With this beam line the manipulation of the transversal and also the longitudinal beam parameters has been achieved. It has been shown that laser generated ion beams can be transported over more than 6 meters and pulses shorter than 300 ps can be generated at this distance. This Talk will give an overview over the recent developments and plans of the LIGHT collaboration.

  8. Multiple Electron Stripping of Heavy Ion Beams

    International Nuclear Information System (INIS)

    Mueller, D.; Grisham, L.; Kaganovich, I.; Watson, R. L.; Horvat, V.; Zaharakis, K. E.; Peng, Y.

    2002-01-01

    One approach being explored as a route to practical fusion energy uses heavy ion beams focused on an indirect drive target. Such beams will lose electrons while passing through background gas in the target chamber, and therefore it is necessary to assess the rate at which the charge state of the incident beam evolves on the way to the target. Accelerators designed primarily for nuclear physics or high energy physics experiments utilize ion sources that generate highly stripped ions in order to achieve high energies economically. As a result, accelerators capable of producing heavy ion beams of 10 to 40 Mev/amu with charge state 1 currently do not exist. Hence, the stripping cross-sections used to model the performance of heavy ion fusion driver beams have, up to now, been based upon theoretical calculations. We have investigated experimentally the stripping of 3.4 Mev/amu Kr 7+ and Xe +11 in N2; 10.2 MeV/amu Ar +6 in He, N2, Ar and Xe; 19 MeV/amu Ar +8 in He, N2, Ar and Xe; 30 MeV He 1 + in He, N2, Ar and Xe; and 38 MeV/amu N +6 in He, N2, Ar and Xe. The results of these measurements are compared with the theoretical calculations to assess their applicability over a wide range of parameters

  9. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

    Science.gov (United States)

    Stumpf, F.; Abu Quba, A. A.; Singer, P.; Rumler, M.; Cherkashin, N.; Schamm-Chardon, S.; Cours, R.; Rommel, M.

    2018-03-01

    The lateral damage induced by focused ion beam on silicon carbide was characterized using electrical scanning probe microscopy (SPM), namely, scanning spreading resistance microscopy and conductive atomic force microscopy (c-AFM). It is shown that the damage exceeds the purposely irradiated circles with a radius of 0.5 μm by several micrometres, up to 8 μm for the maximum applied ion dose of 1018 cm-2. Obtained SPM results are critically compared with earlier findings on silicon. For doses above the amorphization threshold, in both cases, three different areas can be distinguished. The purposely irradiated area exhibits resistances smaller than the non-affected substrate. A second region with strongly increasing resistance and a maximum saturation value surrounds it. The third region shows the transition from maximum resistance to the base resistance of the unaffected substrate. It correlates to the transition from amorphized to defect-rich to pristine crystalline substrate. Additionally, conventional transmission electron microscopy (TEM) and annular dark-field STEM were used to complement and explain the SPM results and get a further understanding of the defect spreading underneath the surface. Those measurements also show three different regions that correlate well with the regions observed from electrical SPM. TEM results further allow to explain observed differences in the electrical results for silicon and silicon carbide which are most prominent for ion doses above 3 × 1016 cm-2. Furthermore, the conventional approach to perform current-voltage measurements by c-AFM was critically reviewed and several improvements for measurement and analysis process were suggested that result in more reliable and impactful c-AFM data.

  10. Development and application of ion beam diagnostics

    International Nuclear Information System (INIS)

    Pfister, Jochen

    2010-01-01

    At GSI - Helmholtz Centre for Heavy Ion Research in Darmstadt/Germany the HITRAP project is in the commissioning phase. This world-wide unique facility consists of a linear decelerator for heavy, highly charged ions including atomic physics precision experiments. During commissioning of the cavities, transverse emittances were measured using the single-shot pepperpot method as well as the multi-gradient method. The extraction emittance of the experimental storage ring (ESR) was determined. Furthermore, the phase space distribution of an decelerated beam at an intermediate energy of 500keV/u was measured behind the IH-structure. New algorithms have been integrated into the analysis of digital images. The longitudinal bunch structure measurements of the ion beam at the entry point into the decelerator and the operation of the Double-drift Buncher is shown. The design, development and the first commissioning of a new single-shot pepperpot emittance meter for very low beam currents and beam energies in the order of some hundred nA is described, making it possible to measure the beam behind the deceleration cavities. In addition, transverse beam dynamics calculations were performed, which supported the hands-on commissioning of the accelerator. It is described how the entire beam line from the ESR to the radio-frequency quadrupole can be optimized using the new routine for transverse effects of the bunching and deceleration, which was successfully integrated into the software COSY Infinity. (orig.)

  11. Ion beams in silicon processing and characterization

    International Nuclear Information System (INIS)

    Chason, E.; Picraux, S.T.; Poate, J.M.; Borland, J.O.; Current, M.I.; Diaz de la Rubia, T.; Eaglesham, D.J.; Holland, O.W.; Law, M.E.; Magee, C.W.; Mayer, J.W.; Melngailis, J.; Tasch, A.F.

    1997-01-01

    General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges. copyright 1997 American Institute of Physics

  12. The quest for crystalline ion beams

    CERN Document Server

    Schramm, U; Bussmann, M; Habs, D

    2002-01-01

    The phase transition of an ion beam into its crystalline state has long been expected to dramatically influence beam dynamics beyond the limitations of standard accelerator physics. Yet, although considerable improvement in beam cooling techniques has been made, strong heating mechanisms inherent to existing high-energy storage rings have prohibited the formation of the crystalline state in these machines up to now. Only recently, laser cooling of low-energy beams in the table-top rf quadrupole storage ring PAaul Laser cooLing Acceleration System (PALLAS) has lead to the experimental realization of crystalline beams. In this article, the quest for crystalline beams as well as their unique properties as experienced in PALLAS will be reviewed.

  13. Filamentation of a converging heavy ion beam

    International Nuclear Information System (INIS)

    Lee, E.P.; Buchanan, H.L.; Rosenbluth, M.N.

    1980-01-01

    A major concern in the use of heavy ion beams as igniters in pellet fusion systems is the vulnerability of the beam to the transverse flamentation instability. The undesirable consequence of this mode is the transverse heating of the beam to the extent that convergence on the pellet becomes impossible. This work considers the case of a beam injected into a gas filled reactor vessel, where finite pulse length and propagation distance play an important role in limiting growth. Two geometries are analyzed: a nonconverging case where the radius at injection is nearly equal to the desired radius at the pellet, and a converging case in which the injection radius is large and the beam is pre-focused to converge at the target. It is found that a cold beam will be severely disrupted if the product of the magnetic plasma frequency and the propagation distance is much larger than unity

  14. Ion beam modification of buckminsterfullerene

    International Nuclear Information System (INIS)

    Prawer, S.; Nugent, K.W.; McCulloch, D.G.; Leong, W.H.; Hoffman, A.; Kalish, R.

    1995-01-01

    The response of thin films of buckminsterfullerene (C 60 ) to energetic xenon ion impact is investigated. The diagnostics employed include Fourier Transform Infrared and Raman Spectroscopies, Cross-Sectional Transmission Electron Microscopy, and Atomic Force Microscopy. By combining the information obtained from these diagnostics with that from the dependence of the conductivity on ion dose, it is concluded that each C 60 molecule completely disintegrates when hit by an energetic ion. The cross-section for the destruction of about 7 x 10 -13 cm 2 for irradiation with 620 keV Xe ions. The disintegration occurs when C atoms are knocked-out of the molecule either directly by the impinging ion or by an energetic knock-on C atom with the damage cascade. This process is quite different from the Coulomb Explosion mechanism previously proposed in the literature. For very low ions doses ( 11 Xe/cm 2 ) most of the C 60 molecules remain intact; however this dose is sufficient to completely disrupt the ordering of the C 60 molecules in the van der Waals bonded C 60 solid. Disruption of the lattice ordering at such low doses is considered to be attributable to the weakness of the van der Waals forces which bind the C 60 clusters together into the molecular solid. 13 refs., 7 figs

  15. Beam Induced Pressure Rise at RHIC

    CERN Document Server

    Zhang, S Y; Bai, Mei; Blaskiewicz, Michael; Cameron, Peter; Drees, Angelika; Fischer, Wolfram; Gullotta, Justin; He, Ping; Hseuh Hsiao Chaun; Huang, Haixin; Iriso, Ubaldo; Lee, Roger C; Litvinenko, Vladimir N; MacKay, William W; Nicoletti, Tony; Oerter, Brian; Peggs, Steve; Pilat, Fulvia Caterina; Ptitsyn, Vadim; Roser, Thomas; Satogata, Todd; Smart, Loralie; Snydstrup, Louis; Thieberger, Peter; Trbojevic, Dejan; Wang, Lanfa; Wei, Jie; Zeno, Keith

    2005-01-01

    Beam induced pressure rise in RHIC warm sections is currently one of the machine intensity and luminosity limits. This pressure rise is mainly due to electron cloud effects. The RHIC warm section electron cloud is associated with longer bunch spacings compared with other machines, and is distributed non-uniformly around the ring. In addition to the countermeasures for normal electron cloud, such as the NEG coated pipe, solenoids, beam scrubbing, bunch gaps, and larger bunch spacing, other studies and beam tests toward the understanding and counteracting RHIC warm electron cloud are of interest. These include the ion desorption studies and the test of anti-grazing ridges. For high bunch intensities and the shortest bunch spacings, pressure rises at certain locations in the cryogenic region have been observed during the past two runs. Beam studies are planned for the current 2005 run and the results will be reported.

  16. Ion beam processing of bio-ceramics

    International Nuclear Information System (INIS)

    Ektessabi, A.M.

    1995-01-01

    Thin films of bio-inert (TiO 2+α , Al 2 O 3+α ) and bio-active (compounds of calcium and phosphorus oxides, hydroxy-apatite) were deposited on the most commonly used implant materials such as titanium and stainless steel, using a dual-ion-beam deposition system. Rutherford backscattering spectroscopy was carried out for quantitative measurement of the interfacial atomic mixing and the composition of the elements. The experimental results show that by controlling the ion beam energy and current, thin films with very good mechanical properties are obtained as a result of the ion beam mixing within the film and at the interface of the film and substrate. (orig.)

  17. Variable-spot ion beam figuring

    International Nuclear Information System (INIS)

    Wu, Lixiang; Qiu, Keqiang; Fu, Shaojun

    2016-01-01

    This paper introduces a new scheme of ion beam figuring (IBF), or rather variable-spot IBF, which is conducted at a constant scanning velocity with variable-spot ion beam collimated by a variable diaphragm. It aims at improving the reachability and adaptation of the figuring process within the limits of machine dynamics by varying the ion beam spot size instead of the scanning velocity. In contrast to the dwell time algorithm in the conventional IBF, the variable-spot IBF adopts a new algorithm, which consists of the scan path programming and the trajectory optimization using pattern search. In this algorithm, instead of the dwell time, a new concept, integral etching time, is proposed to interpret the process of variable-spot IBF. We conducted simulations to verify its feasibility and practicality. The simulation results indicate the variable-spot IBF is a promising alternative to the conventional approach.

  18. Charge neutralization of small ion beam clumps

    Energy Technology Data Exchange (ETDEWEB)

    Welch, D R [Mission Research Corp., Albuquerque, NM (United States); Olson, C L; Hanson, D L [Sandia National Labs., Albuquerque, NM (United States)

    1997-12-31

    The mega-ampere currents associated with light ion fusion (LIF) require excellent charge neutralization to prevent divergence growth. As the size and space-charge potential of a beam clump or `beamlet` become small (submillimeter size and kilovolt potentials), the neutralization becomes increasingly difficult. Linear theory predicts that plasma electrons cannot neutralize potentials < {phi}{sub crit} = (1/2)m{sub e}v{sub i}{sup 2}/e, where m{sub e} is the electron mass and v{sub i} is the ion beam velocity. A non-uniform beam would, therefore, have regions with potentials sufficient to add divergence to beam clumps. The neutralization of small beamlets produced on the SABLE accelerator and in numerical simulation has supported the theory, showing a plateau in divergence growths as the potential in the beamlet exceeds {phi}{sub crit}. (author). 1 tab., 2 figs., 4 refs.

  19. A Study on the Ion Beam Extraction using Duo-PiGatron Ion source for Vertical Type Ion Beam Facility

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bom Sok; Lee, Chan young; Lee, Jae Sang [KAERI, Daejeon (Korea, Republic of)

    2015-05-15

    In Korea Multipurpose Accelerator Complex (KOMAC), we have started ion beam service in the new beam utilization building since March this year. For various ion beam irradiation services, we are developed implanters such as metal (150keV/1mA), gaseous (200keV/5mA) and high current ion beam facility (20keV/150mA). One of the new one is a vertical type ion beam facility without acceleration tube (60keV/20mA) which is easy to install the sample. After the installation is complete, it is where you are studying the optimal ion beam extraction process. Detailed experimental results will be presented. Vertical Type Ion Beam Facility without acceleration tube of 60keV 20mA class was installed. We successfully extracted 60keV 20mA using Duo- PiGatron Ion source for Vertical Type Ion Beam Facility. Use the BPM and Faraday-cup, is being studied the optimum conditions of ion beam extraction.

  20. Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

    International Nuclear Information System (INIS)

    Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

    1999-01-01

    The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

  1. An ASEAN Ion Beam Analysis Center at Chiang Mai University, Thailand

    International Nuclear Information System (INIS)

    Tippawan, U.; Kamwann, T.; Yu, L.D.; Intarasiri, S.; Puttaraksa, N.; Unai, S.; Thongleurm, C.; Singkarat, S.

    2014-01-01

    To contribute to the development of nuclear science and technology in Thailand, a comprehensive ion beam analysis center unique in the ASEAN region has recently been established at Chiang Mai University, Thailand. The center is equipped with a 1.7-MV Tandetron tandem accelerator with an ion beam analysis beam line. The beam line is currently capable of performing ion beam analysis techniques such as Rutherford Backscattering Spectrometry (RBS), RBS/channeling, Elastic BackScattering (EBS), Particle Induced X-ray Emission (PIXE) and Ionoluminescence (IL) with assistance of commercial and in-house-developed softwares. Micro ion beam for MeV-ion mapping using programmable aperture or capillary focusing techniques is being developed. Ion beam analysis experiments and applications have been vigorously developed, especially for novel materials analysis focused on archeological, gemological and biological materials besides other conventional materials.

  2. Calculation of ion storage in electron beams with account of ion-ion interactions

    International Nuclear Information System (INIS)

    Perel'shtejn, Eh.A.; Shirkov, G.D.

    1979-01-01

    Ion storage in relativistic electron beams was calculated taking account of ion-ion charge exchange and ionization. The calculations were made for nitrogen ion storage from residual gas during the compression of electron rings in the adhezator of the JINR heavy ion accelerator. The calculations were made for rings of various parameters and for various pressures of the residual gas. The results are compared with analogous calculations made without account of ion-ion processes. It is shown that at heavy loading of a ring by ions ion-ion collisions play a significant part, and they should be taken into account while calculating ion storage

  3. Ion beam dump for JT-60 NBI

    International Nuclear Information System (INIS)

    Kuriyama, Masaaki; Horiike, Hiroshi; Matsuda, Shinzaburo; Morita, Hiroaki; Shibanuma, Kiyoshi

    1981-10-01

    The design of the active cooling type ion beam dump for JT-60 NBI which receives the total beam power of 5.6 MW for 10 sec continuously is described. It is composed of array of many finned tubes which is made of oxygen free copper with 0.2% silver content. The safety margin against thermal and mechanical troubles is estimated by the heat transfer and the thermal stress calculation. (author)

  4. Ion beam pulse radiolysis system at HIMAC

    Energy Technology Data Exchange (ETDEWEB)

    Chitose, N; Katsumura, Y; Domae, M; Ishigure, K [Tokyo Univ. (Japan); Murakami, T

    1997-03-01

    An ion beam pulse radiolysis system has been constructed at HIMAC facility. Ion beam of 24MeV He{sup 2+} with the duration longer than 1 {mu}s is available for irradiation. Three kinds of aqueous solutions, (C{sub 6}H{sub 5}){sub 2}CO, NaHCO{sub 3}, and KSCN, were irradiated and the absorption signals corresponding to (C{sub 6}H{sub 5}){sub 2}CO{sup -}, CO{sub 3}{sup -}, and (SCN){sub 2}{sup -} respectively were observed. Ghost signals which interfere with the measurement are also discussed. (author)

  5. Ion beam techniques for analyzing polymers irradiated by ions

    International Nuclear Information System (INIS)

    Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

    1992-01-01

    In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

  6. High-powered pulsed-ion-beam acceleration and transport

    Energy Technology Data Exchange (ETDEWEB)

    Humphries, S. Jr.; Lockner, T.R.

    1981-11-01

    The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized.

  7. High-powered pulsed-ion-beam acceleration and transport

    International Nuclear Information System (INIS)

    Humphries, S. Jr.; Lockner, T.R.

    1981-11-01

    The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized

  8. Treatment planning with ion beams

    International Nuclear Information System (INIS)

    Foss, M.H.

    1985-01-01

    Ions have higher linear energy transfer (LET) near the end of their range and lower LET away from the end of their range. Mixing radiations of different LET complicates treatment planning because radiation kills cells in two statistically independent ways. In some cases, cells are killed by a single-particle, which causes a linear decrease in log survival at low dosage. When the linear decrease is subtracted from the log survival curve, the remaining curve has zero slope at zero dosage. This curve is the log survival curve for cells that are killed only by two or more particles. These two mechanisms are statistically independent. To calculate survival, these two kinds of doses must be accumulated separately. The effect of each accumulated dosage must be read from its survival curve, and the logarithms of the two effects added to get the log survival. Treatment plans for doses of protons, He 3 ions, and He 4 ions suggest that these ions will be useful therapeutic modalities

  9. Fullerene genesis by ion beams

    International Nuclear Information System (INIS)

    Gamaly, E.G.; Chadderton, L.T.; Commonwealth Scientific and Industrial Research Organization, Lindfield, NSW

    1995-01-01

    Clearly detectable quantities of molecular fullerene (C 60 ), the most recently discovered allotrope of carbon, have been observed in graphite following irradiation with heavy projectile ions at energies of about 1 GeV using high pressure chromatography. Similar experiments using lower ion energies gave no corresponding signal, indicating an absence of fullerene. This clear difference suggests that there exists an energy threshold for fullerene genesis. Beginning with a microscopic description of deposition and transfer of energy from the ion to the target, a theoretical model is developed for interpretation of these and similar experiments. An important consequence is a description of the formation of large carbon clusters in the hot dense 'primeval soup' of single carbon atoms by means of random 'sticky' collisions. The ion energy threshold is seen as arising, physically, from a balance in the competition between the rate of primary energy deposition and the rate of system cooling. Rate equations for the basic clustering process allow calculations of the time-dependent number densities for the different carbon clusters produced. An important consequence of the theory is that it is established that the region for the specific phase transition from graphite to fullerene lies in the same pressure regime on the phase diagram as does the corresponding transition for graphite to diamond. (author)

  10. Dewetting and nanopattern formation of thin Pt films on SiO2 induced by ion beam irradiation

    International Nuclear Information System (INIS)

    Hu, Xiaoyuan; Cahill, David G.; Averback, Robert S.

    2001-01-01

    Dewetting and nanopattern formation of 3 - 10 nm Pt thin films upon ion irradiation is studied using scanning electron microscopy (SEM). Lateral feature size and the fraction of exposed surface area are extracted from SEM images and analyzed as functions of ion dose. The dewetting phenomenon has little temperature dependence for 3 nm Pt films irradiated by 800 keV Kr + at temperatures ranging from 80 to 823 K. At 893 K, the films dewet without irradiation, and no pattern formation is observed even after irradiation. The thickness of the Pt films, in the range 3 - 10 nm, influences the pattern formation, with the lateral feature size increasing approximately linearly with film thickness. The effect of different ion species and energies on the dewetting process is also investigated using 800 keV Kr + and Ar + irradiation and 19.5keVHe + , Ar + , Kr + , and Xe + irradiation. The lateral feature size and exposed surface fraction scale with energy deposition density (J/cm2) for all conditions except 19.5keVXe + irradiation. [copyright] 2001 American Institute of Physics

  11. Protective effect of diallyl disulfide against the irradiation damage in mice induced by "1"2C"6"+ ion beams

    International Nuclear Information System (INIS)

    Xu Shuai; Ma Xiaofei; Zhang Hong; Liu Yang

    2013-01-01

    The radioprotective effect of Diallyl disulfide (DADS) on "1"2C"6"+ ion irradiation was studied. Pretreated with DADS of different concentration, male Kung-Ming mice were exposed to whole body irradiation with dosage of 4 Gy "1"2C"6"+ ion. The animals were sacrificed after irradiation. Then the bone marrow cells micronucleus rate, malondialdehyde (MDA) levels, content of protein carbonylation, total antioxidant capacity (T-AOC) and alanine aminotransferase (ALT) activity were measured. As compared with those in irradiated group, the ratio of micronucleus cells in marrow and the hepatic ALT activity in the pretreatment group with low dose DADS decreased significantly (p < O.OOl). Similarly, the content of protein carbonylation and the levels of MDA dropped dramatically in the group with middle dose DADS treatment (p < 0.05). On the contrary, the hepatic T-AOC increased markedly in the group of pretreatment with low dose DADS (p < 0.05). The results showed that DADS protect lipoid, protein and genetic material from "1"2C"6"+ ion irradiation by right of resisting oxidative stress. (authors)

  12. Establishment of an ASEAN Ion Beam Analysis Centre for Material Characterizations at Chiang Mai University

    International Nuclear Information System (INIS)

    Kamwanna, T.; Junphong, P.; Yu, L.D.; Singkarat, S.; Intarasiri, S.; Suwannakachorn, D.

    2015-01-01

    A comprehensive ion beam analysis centre unique in the ASEAN (Association of Southeast Asian Nations) region has been established at Chiang Mai University, Thailand. The centre is equipped with a 1.7 MV Tandetron tandem accelerator and a 300 kV medium energy ion beam accelerator for ion beam analysis. The Tandetron accelerator employs two ion sources, a duoplasmatron ion source and a sputter ion source, capable of producing ion beams of both light species (hydrogen and helium) and heavy species. The beamline is currently able to perform ion beam analysis techniques, such as Rutherford backscattering spectrometry (RBS), RBS/channelling, elastic backscattering (EBS), particle induced x ray emission (PIXE) and ionoluminescence (IL) with the assistance of commercial and self-developed software. The medium energy ion accelerator features an ns pulsed beam so that time of flight (ToF) RBS analysis using medium energy ion beams is available for detailed analysis of materials. Ion beam analysis experiments and applications have been vigorously developed for the real time characterization of various materials. Examples are presented and qualities of the ion beam analysis techniques are discussed. (author)

  13. Ion-beam texturing of uniaxially textured Ni films

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2005-01-01

    The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth

  14. Production of highly charged ion beams from ECR ion sources

    International Nuclear Information System (INIS)

    Xie, Z.Q.

    1997-09-01

    Electron Cyclotron Resonance (ECR) ion source development has progressed with multiple-frequency plasma heating, higher mirror magnetic fields and better technique to provide extra cold electrons. Such techniques greatly enhance the production of highly charged ions from ECR ion sources. So far at cw mode operation, up to 300 eμA of O 7+ and 1.15 emA of O 6+ , more than 100 eμA of intermediate heavy ions for charge states up to Ar 13+ , Ca 13+ , Fe 13+ , Co 14+ and Kr 18+ , and tens of eμA of heavy ions with charge states to Kr 26+ , Xe 28+ , Au 35+ , Bi 34+ and U 34+ have been produced from ECR ion sources. At an intensity of at least 1 eμA, the maximum charge state available for the heavy ions are Xe 36+ , Au 46+ , Bi 47+ and U 48+ . An order of magnitude enhancement for fully stripped argon ions (I ≥ 60 enA) also has been achieved. This article will review the ECR ion source progress and discuss key requirement for ECR ion sources to produce the highly charged ion beams

  15. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    International Nuclear Information System (INIS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

    2012-01-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  16. Techniques to produce and accelerate radioactive ion beams

    CERN Document Server

    Penescu, Liviu Constantin; Lettry, Jacques; Cata-Danil, Gheorghe

    The production and acceleration of the Radioactive Ion Beams (RIB) continues the long line of nuclear investigations started in the XIXth century by Pierre and Marie Curie, Henri Becquerel and Ernest Rutherford. The contemporary applications of the RIBs span a wide range of physics fields: nuclear and atomic physics, solid-state physics, life sciences and material science. ISOLDE is a world-leading Isotope mass-Separation On-Line (ISOL) facility hosted at CERN in Geneva for more than 40 years, offering the largest variety of radioactive ion beams with, until now, more than 1000 isotopes of more than 72 elements (with Z ranging from 2 to 88), with half-lives down to milliseconds and intensities up to 1011 ions/s. The post acceleration of the full variety of beams allows reaching final energies between 0.8 and 3.0 MeV/u. This thesis describes the development of a new series of FEBIAD (“Forced Electron Beam Induced Arc Discharge”) ion sources at CERN-ISOLDE. The VADIS (“Versatile Arc Discharge Ion Source�...

  17. Improvement of herbage by heavy ion beams

    International Nuclear Information System (INIS)

    Xie Hongmei; Hao Jifang; Wei Zengquan; Xie Zhongkui; Li Fengqin; Wang Yajun

    2004-01-01

    Herbage seeds of legume and grass were irradiated in penetration by 80 MeV/u 20 Ne 10+ ions. The results of field tests and observations of the root-tip cells showed that growth of the seedling was obviously weakened with increasing doses. Frequencies of chromosomal aberration and micronucleus increased significantly with increasing doses. According to the field growth tests, radiation sensitivity of grass herbage to the heavy ion beams was much higher than leguminous herbage, and suitable dose of the heavy ion irradiation for the grass and leguminous herbage is 20-30 Gy and 150 Gy, respectively

  18. Physics with fast molecular-ion beams

    International Nuclear Information System (INIS)

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented

  19. Profiling hydrogen in materials using ion beams

    International Nuclear Information System (INIS)

    Ziegler, J.F.; Wu, C.P.; Williams, P.

    1977-01-01

    Over the last few years many ion beam techniques have been reported for the profiling of hydrogen in materials. Nine of these were evaluated using similar samples of hydrogen ion-implanted into silicon. When possible the samples were analyzed using two or more techniques to confirm the ion-implanted accuracy. The results of this analysis which has produced a consensus profile of H in silicon which is useful as a calibration standard are reported. The analytical techniques used have capabilities ranging from very high depth resolution (approximately 50 A) and high sensitivity (less than 1 ppM) to deep probes for hydrogen which can sample throughout thin sheets

  20. Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

    Directory of Open Access Journals (Sweden)

    Rius Gemma

    2014-01-01

    Full Text Available Recently, relevant advances on graphene as a building block of integrated circuits (ICs have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C into patterned graphitic layers by metal-assisted thermal treatment (Ni foils. In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

  1. The effect of ion-beam induced strain on the nucleation density of chemical vapour deposited diamond

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

    1995-01-01

    The effect of ion implantation on the nucleation of CVD diamond on silicon and diamond substrates has been investigated. The strategy employed is to create laterally confined regions of strain in the substrates by focused MeV implantation of light ions. Raman Microscopy has been employed to obtain spatially resolved maps of the strain in these implanted regions. On diamond substrates a homo-epitaxial CVD diamond film was grown on top of both the implanted and unimplanted regions of the substrate. Raman analysis of the film grown on top of the implanted region revealed it to be under slightly tensile strain as compared to that grown on the unimplanted diamond substrate. The film deposited on the implanted portion of the diamond showed a lower fluorescence background; indicating a lower concentration of incorporated defects. These results suggest that the strain and defects in the diamond substrate material have an important influence on the quality of the homo-epitaxially grown diamond films. 6 refs., 5 figs

  2. Pattern formation on Ge by low energy ion beam erosion

    International Nuclear Information System (INIS)

    Teichmann, Marc; Lorbeer, Jan; Frost, Frank; Rauschenbach, Bernd; Ziberi, Bashkim

    2013-01-01

    Modification of nanoscale surface topography is inherent to low-energy ion beam erosion processes and is one of the most important fields of nanotechnology. In this report a comprehensive study of surface smoothing and self-organized pattern formation on Ge(100) by using different noble gases ion beam erosion is presented. The investigations focus on low ion energies (⩽ 2000 eV) and include the entire range of ion incidence angles. It is found that for ions (Ne, Ar) with masses lower than the mass of the Ge target atoms, no pattern formation occurs and surface smoothing is observed for all angles of ion incidence. In contrast, for erosion with higher mass ions (Kr, Xe), ripple formation starts at incidence angles of about 65° depending on ion energy. At smaller incident angles surface smoothing occurs again. Investigations of the surface dynamics for specific ion incidence angles by changing the ion fluence over two orders of magnitude gives a clear evidence for coarsening and faceting of the surface pattern. Both observations indicate that gradient-dependent sputtering and reflection of primary ions play crucial role in the pattern evolution, just at the lowest accessible fluences. The results are discussed in relation to recently proposed redistributive or stress-induced models for pattern formation. In addition, it is argued that a large angular variation of the sputter yield and reflected primary ions can significantly contribute to pattern formation and evolution as nonlinear and non-local processes as supported by simulation of sputtering and ion reflection. (paper)

  3. Beam instability during high-current heavy-ion beam transport

    International Nuclear Information System (INIS)

    Kikuchi, T.; Someya, T.; Kawata, S.; Nakajima, M.; Horioka, K.

    2005-01-01

    In driver system for heavy ion inertial fusion, beam dynamics is investigated by particle-in-cell simulations during final beam bunching. The particle simulations predict that the beam is transported with the localized transverse charge distribution induced by the strong space charge effect. The calculation results also show that the emittance growth during the longitudinal bunch compression for various particle distributions at the initial conditions and with two types of transverse focusing model, which are a continuous focusing and an alternating gradient focusing lattice configurations. (author)

  4. National Centre for Radioactive Ion Beams (NCRIB)

    International Nuclear Information System (INIS)

    Chintalapudi, S.N.

    1999-01-01

    Radioactive Ion (nuclear) Beams have become prolific recently. Nuclear physics and associated subjects have staged a comeback to almost the beginning with the advent of RIB. A dedicated National Centre for RIB (NCRIB) proposed, discussed at several forums and under serious consideration is described

  5. BEARS: Radioactive ion beams at LBNL

    International Nuclear Information System (INIS)

    Powell, J.; Guo, F.Q.; Haustein, P.E.

    1998-01-01

    BEARS (Berkeley Experiments with Accelerated Radioactive Species) is an initiative to develop a radioactive ion-beam capability at Lawrence Berkeley National Laboratory. The aim is to produce isotopes at an existing medical cyclotron and to accelerate them at the 88 inch Cyclotron. To overcome the 300-meter physical separation of these two accelerators, a carrier-gas transport system will be used. At the terminus of the capillary, the carrier gas will be separated and the isotopes will be injected into the 88 inch Cyclotron's Electron Cyclotron Resonance (ECR) ion source. The first radioactive beams to be developed will include 20-min 11 C and 70-sec 14 O, produced by (p,n) and (p,α) reactions on low-Z targets. A test program is currently being conducted at the 88 inch Cyclotron to develop the parts of the BEARS system. Preliminary results of these tests lead to projections of initial 11 C beams of up to 2.5 x 10 7 ions/sec and 14 O beams of 3 x 10 5 ions/sec

  6. Treatment Planning for Ion Beam Therapy

    Science.gov (United States)

    Jäkel, Oliver

    The special aspects of treatment planning for ion beams are outlined in this chapter, starting with positioning and immobilization of the patient, describing imaging and segmentation, definition of treatment parameters, dose calculation and optimization, and, finally, plan assessment, verification, and quality assurance.

  7. Ion beam analysis of metal ion implanted surfaces

    International Nuclear Information System (INIS)

    Evans, P.J.; Chu, J.W.; Johnson, E.P.; Noorman, J.T.; Sood, D.K.

    1993-01-01

    Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs

  8. Ion beam analysis of metal ion implanted surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Evans, P J; Chu, J W; Johnson, E P; Noorman, J T [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D K [Royal Melbourne Inst. of Tech., VIC (Australia)

    1994-12-31

    Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs.

  9. Ion beam analysis of metal ion implanted surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Evans, P.J.; Chu, J.W.; Johnson, E.P.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs.

  10. The TMX heavy ion beam probe

    International Nuclear Information System (INIS)

    Hallock, G.A.

    1994-01-01

    A heavy ion beam probe has been used to measure the radial space potential distribution in the central cell of TMX. This was the first beam probe system to utilize computer control, CAMAC instrumentation, and fast time response for broadband fluctuation capabilities. The fast time response was obtained using off-line processing of the energy analyzer detector signals and wideband transimpedance amplifiers. The on-axis space potential was found to be 300--400 V, with φ e /T ec ∼8. The radial potential profile is parabolic when gas box fueling is used. The frequency of observed fluctuations was found to agree with the E x B plasma rotation frequency during the discharge. The measured Tl ++ secondary ion current level is consistent with calculations, given reasonable assumptions for beam attenuation

  11. Radioactive ion beam production challenges at the Holifield Heavy Ion Research Facility

    International Nuclear Information System (INIS)

    Meigs, M.J.; Alton, G.D.; Dowling, D.T.; Haynes, D.L.; Jones, C.M.; Juras, R.C.; Lane, S.N.; Mills, G.D.; Mosko, S.W.; Olsen, D.K.; Tatum, B.A.

    1992-01-01

    The radioactive ion beam (RIB) project at the Holifield Heavy Ion Research Facility (HHIRF) will provide for reconfiguration of the HHIRF accelerator system to enable provision of low-intensity RIBs for nuclear and astrophysics research. As we have progressed with the design of the reconfiguration, we have encountered several challenges that were not immediately obvious when first contemplating the project. The challenges do not seem insurmountable but should keep life interesting for those of us doing the work. A brief review of the project will allow a better understanding of the challenges in RIB production. Radioactive ion beams will be produced with the Isotope Separator On-Line (ISOL) postacceleration technique. In particular, radioactive atoms will be produced by reactions in the thick stopping target of an ISOL-type target-ion source assembly using intense beams from the Oak Ridge Isochronous Cyclotron equipped with a light-ion internal source. This ISOL target-ion source assembly will be mounted on a high-voltage platform with a mass separator. The target ion source will operate at potentials up to 50 kV with respect to the high voltage platform. The radioactive atoms produced by nuclear reactions in the target diffuse to the surface of the heated target material, desorb from this surface, and effuse through a heated transfer tube into an ion source where ionization and extraction take place. Two types of ion sources will be initially considered. A Forced Electron Beam Induced Arc Discharge source, similar to those used by the ISOLDE facility at CERN and by the UNISOR facility at ORNL, will be built to produce positive ions. These positive ions will be focused through an alkali vapor charge-exchange canal to produce negative ions for tandem injection. In addition, a direct negative surface ionization addition or modification to the above source will be built and investigated

  12. High repetition rate intense ion beam source

    International Nuclear Information System (INIS)

    Hammer, D.A.; Glidden, S.C.; Noonan, B.

    1992-01-01

    This final report describes a ≤ 150kV, 40kA, 100ns high repetition rate pulsed power system and intense ion beam source which is now in operation at Cornell University. Operation of the Magnetically-controlled Anode Plasma (MAP) ion diode at > 100Hz (burst mode for up to 10 pulse bursts) provides an initial look at repetition rate limitations of both the ion diode and beam diagnostics. The pulsed power systems are capable of ≥ 1kHz operation (up to 10 pulse bursts), but ion diode operation was limited to ∼100Hz because of diagnostic limitations. By varying MAP diode operating parameters, ion beams can be extracted at a few 10s of keV or at up to 150keV, the corresponding accelerating gap impedance ranging from about 1Ω to about 10Ω. The ability to make hundreds of test pulses per day at an average repetition rate of about 2 pulses per minute permits statistical analysis of diode operation as a function of various parameters. Most diode components have now survived more than 10 4 pulses, and the design and construction of the various pulsed power components of the MAP diode which have enabled us to reach this point are discussed. A high speed data acquisition system and companion analysis software capable of acquiring pulse data at 1ms intervals (in bursts of up to 10 pulses) and processing it in ≤ min is described

  13. Development of an energy analyzer as diagnostic of beam-generated plasma in negative ion beam systems

    Science.gov (United States)

    Sartori, E.; Carozzi, G.; Veltri, P.; Spolaore, M.; Cavazzana, R.; Antoni, V.; Serianni, G.

    2017-08-01

    The measurement of the plasma potential and the energy spectrum of secondary particles in the drift region of a negative ion beam offers an insight into beam-induced plasma formation and beam transport in low pressure gasses. Plasma formation in negative-ion beam systems, and the characteristics of such a plasma are of interest especially for space charge compensation, plasma formation in neutralizers, and the development of improved schemes of beam-induced plasma neutralisers for future fusion devices. All these aspects have direct implications in the ITER Heating Neutral Beam and the operation of the prototypes, SPIDER and MITICA, and also have important role in the conceptual studies for NBI systems of DEMO, while at present experimental data are lacking. In this paper we present the design and development of an ion energy analyzer to measure the beam plasma formation and space charge compensation in negative ion beams. The diagnostic is a retarding field energy analyzer (RFEA), and will measure the transverse energy spectra of plasma molecular ions. The calculations that supported the design are reported, and a method to interpret the measurements in negative ion beam systems is also proposed. Finally, the experimental results of the first test in a magnetron plasma are presented.

  14. Ion-Beam-Excited Electrostatic Ion Cyclotron Instability

    DEFF Research Database (Denmark)

    Michelsen, Poul; Pécseli, Hans; Juul Rasmussen, Jens

    1977-01-01

    The stability limits of the ion‐beam‐excited, electrostatic, ion cyclotron instability were investigated in a Q‐machine plasma where the electrons could be heated by microwaves. In agreement with theory, the beam energy necessary for excitation decreased with increasing electron temperature....

  15. Ion-Beam-Excited, Electrostatic, Ion Cyclotron Instability

    DEFF Research Database (Denmark)

    Michelsen, Poul; Pécseli, Hans; Juul Rasmussen, Jens

    1977-01-01

    The stability limits of the ion‐beam‐excited, electrostatic, ion cyclotron instability were investigated in a Q‐machine plasma where the electrons could be heated by microwaves. In agreement with theory, the beam energy necessary for excitation decreased with increasing electron temperature....

  16. Basic aspects of ion beam mixing

    International Nuclear Information System (INIS)

    Averback, R.S.

    1985-07-01

    Irradiation of solids with energetic particles results in the reorganization of constituent target atoms, i.e., ion beam mixing (IM). At low temperatures, IM is characterized by prompt (10 -10 s) diffusion processes which are localized in the vicinity of the displacement cascade. Mixing at low temperatures can cause the system to depart far from the equilibrium state. At elevated temperatures, the diffusion of radiation-induced defects extends the mixing to longer times and greater distances. These delayed IM processes tend to return the system toward equilibrium. Recent experimental progress has led to a qualitative understanding of the fundamental aspects of IM in both temperature regimes. This has been achieved through systematic measurements of the influences of temperature, dose, dose-rate, cascade energy density, and chemical interactions on IM. The results of these experiments will be reviewed and compared to IM models based on collisional, thermal spike, and radiation-enhanced diffusion processes. The relation of IM to other fundamental radiation damage effects will also be discussed. 75 refs., 8 figs., 2 tabs

  17. Ions kinematics in an electrostatic ion beam trap

    Energy Technology Data Exchange (ETDEWEB)

    Attia, D

    2004-06-01

    In this study, I have tried to provide a better understanding of the dynamics of ions inside an electrostatic ion beam trap. The electrostatic ion trap allows to store ions moving between two electrostatic mirrors. Although the trap has been developed already seven years ago, no direct measurement of the transversal velocity distribution of the ions has been performed. Such quantity is central for understanding the conditions under which a beam should be produced (mainly emittance) in order to be trapped by such a device. The data I have obtained during the course of this work are based on an experimental technique which relies on the direct imaging of the particles exiting the trap, as well as on numerical simulations of the ion trajectories inside the trap. I have personally been involved in the hardware development of the imaging system, the data acquisition and analysis of the data as well as il all numerical calculations presented here. These results allow us to obtain, for the first time, experimental information on the transverse phase space of the trap, and contribute to the overall understanding of the ion motion in this system. (author)

  18. Study on broad beam heavy ion CT

    International Nuclear Information System (INIS)

    Ohno, Yumiko; Kohno, Toshiyuki; Sasaki, Hitomi; Nanbu, S.; Kanai, Tatsuaki

    2003-01-01

    To achieve the heavy ion radiotherapy more precisely, it is important to know the distribution of the electron density in a human body, which is highly related to the range of charged particles. From a heavy ion CT image, we can directly obtain the 2-D distribution of the electron density in a sample. For this purpose, we have developed a broad beam heavy ion CT system. The electron density was obtained using some kinds of solutions targets. Also the dependence of the spatial resolution on the target size and the kinds of beams was estimated in this work using cylinders targets of 40, 60 and 80 mm in diameter, each of them has a hole of 10 mm in diameter at the center of it. (author)

  19. Target design for heavy ion beam fusion

    International Nuclear Information System (INIS)

    Meyer-ter-Vehn, J.; Metzler, N.

    1981-07-01

    Target design for Heavy Ion Beam Fusion and related physics are discussed. First, a modified version of the Kidder-Bodner model for pellet gain is presented and is used to define the working point (Esub(beam) = 4.8 MJ, Gain 83) for a reactor size target. Secondly, stopping of heavy ions in hot dense plasma is investigated and numerical results for stopping powers and ranges of 10 GeV Bi-ions in Pb, Li, and PbLi-alloy are given. Finally, results of an explicit implosion calculation, using the 1-D code MINIHY, are discussed in detail. The hydrodynamic efficiency is found to be about 5%. Special attention is given to the shock sequence leading to the ignition configuration. Also the growth of Rayleigh-Taylor instability at the absorber-pusher interface is estimated. (orig.)

  20. Large scale silver nanowires network fabricated by MeV hydrogen (H+) ion beam irradiation

    International Nuclear Information System (INIS)

    S, Honey; S, Naseem; A, Ishaq; M, Maaza; M T, Bhatti; D, Wan

    2016-01-01

    A random two-dimensional large scale nano-network of silver nanowires (Ag-NWs) is fabricated by MeV hydrogen (H + ) ion beam irradiation. Ag-NWs are irradiated under H +  ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H + ion beam-induced welding of Ag-NWs at intersecting positions. H +  ion beam induced welding is confirmed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Moreover, the structure of Ag NWs remains stable under H +  ion beam, and networks are optically transparent. Morphology also remains stable under H +  ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H +  ion beam irradiation. The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices. (paper)

  1. Ion-induced sputtering

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

    1983-01-01

    The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

  2. Negative ion based neutral beams for plasma heating

    International Nuclear Information System (INIS)

    Prelec, K.

    1978-01-01

    Neutral beam systems based on negative ions have been considered because of a high expected power efficiency. Methods for the production, acceleration and neutralization of negative ions will be reviewed and possibilities for an application in neutral beam lines explored

  3. Research and development of advanced materials using ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Namba, Susumu [Nagasaki Inst. of Applied Science, Nagasaki (Japan)

    1997-03-01

    A wide range of research and development activities of advanced material synthesis using ion beams will be discussed, including ion beam applications to the state-of-the-art electronics from giant to nano electronics. (author)

  4. Ion beam heating for fast ignition

    International Nuclear Information System (INIS)

    Gus'kov, S.Yu.; Limpouch, J.; Klimo, O.

    2010-01-01

    Complete text of publication follows. The characteristics features of the formation of the spatial distribution of the energy transferred to the plasma from a beam of ions with different initial energies, masses and charges under fast ignition conditions are determined. The motion of the Bragg peak is extended with respect to the spatial distribution of the temperature of the ion-beam-heated medium. The parameters of the ion beams are determined to initiate different regimes of fast ignition of thermonuclear fuel precompressed to a density of 300-500 g/cm 3 - the edge regime, in which the ignition region is formed at the outer boundary of the fuel, and the internal regime, in which the ignition region is formed in central parts of the fuel. The conclusion on the requirements for fast ignition by light and heavy ion beams is presented. It is shown that the edge heating with negative temperature gradient is described by a self-similar solution. Such a temperature distribution is the reason of the fact that the ignited beam energy at the edge heating is larger than the minimal ignition energy by factor 1.65. The temperature Bragg peak may be produced by ion beam heating in the reactor scale targets with pR-parameter larger than 3-4 g/cm 2 . In particular, for central ignition of the targets with pR-parameters in the range of 4-8 g/cm 2 the ion beam energy should be, respectively, from 5 to 7 times larger than the minimal ignition energy. The work by S.Ye. Gus'kov, D.V. Il'in, and V.E. Sherman was supported by the Ministry of Education and Science of the Russian Federation under the program 'Development of the Scientific Potential of High Education for 2009-2010' (project no. 2.1.1/1505) and the Russian Foundation for Basic Research (project no. 08-02-01394 a ). The work by J. Limpouch and O. Klimo was supported by the Czech Ministry of Education (project no. LC528, MSM6840770022).

  5. Current neutralization of converging ion beams

    International Nuclear Information System (INIS)

    Mosher, D.

    1978-01-01

    It is desired to consider the problem of current neutralization of heavy ion beams traversing gas backgrounds in which the conductivity changes due to beam heating and beam convergence. The procedure is to determine Green's-function solutions to the magnetic-diffusion equation derived from Maxwell's equations and an assumed scaler-plasma conductivity sigma for the background-electron current density j/sub e/. The present calculation is more general than some previously carried out in that arbitrary time variations for the beam current j/sub b/ and conductivity are allowed and the calculation is valid for both weak and strong neutralization. Results presented here must be combined with an appropriate energy-balance equation for the heated background in order to obtain the neutralization self-consistently

  6. Ion induced Auger spectroscopy

    International Nuclear Information System (INIS)

    Thomas, E.W.; Legg, K.O.; Metz, W.A.

    1980-01-01

    Auger electron spectra are induced by impact of heavy ions (e.g. Ar + ) on surfaces; it has been suggested that analysis of such spectra would be a useful technique for surface analysis. We have examined the Auger spectra for various projectile-target combinations and present as representative data the spectra for 100 keV Ar + impact on Al, Cr, Mn, Fe and Co. For a projectile incident on a species of higher nuclear charge the spectrum is dominated by Auger lines from the projectile, broadened considerably by the Doppler effect due to the projectile's motion. The spectra are not characteristic of the target and therefore offer no opportunity for surface analysis. For a projectile incident on a target of lower nuclear charge the spectrum is that of the target species but the spectrum is consistent with the source being sputtered excited atoms; the Auger electrons do not come from the surface. We conclude that the ion induced Auger spectra are in general not a convenient method for surface analysis. (orig.)

  7. Applications of laser produced ion beams to nuclear analysis of materials

    International Nuclear Information System (INIS)

    Mima, K.; Azuma, H.; Fujita, K.; Yamazaki, A.; Okuda, C.; Ukyo, Y.; Kato, Y.; Arrabal, R. Gonzalez; Soldo, F.; Perlado, J. M.; Nishimura, H.; Nakai, S.

    2012-01-01

    Laser produced ion beams have unique characteristics which are ultra-short pulse, very low emittance, and variety of nuclear species. These characteristics could be used for analyzing various materials like low Z ion doped heavy metals or ceramics. Energies of laser produced ion beam extend from 0.1MeV to 100MeV. Therefore, various nuclear processes can be induced in the interactions of ion beams with samples. The ion beam driven nuclear analysis has been developed for many years by using various electrostatic accelerators. To explore the applicability of laser ion beam to the analysis of the Li ion battery, a proton beam with the diameter of ∼ 1.0 μm at Takasaki Ion Acceleration for Advanced Radiation Application (TIARA), JAEA was used. For the analysis, the PIGE (Particle-Induced Gamma Ray Emission) is used. The proton beam scans over Li battery electrode samples to diagnose Li density in the LiNi 0.85 Co 0.15 O 2 anode. As the results, PIGE images for Li area density distributions are obtained with the spatial resolution of better than 1.5μm FWHM. By the Li PIGE images, the depth dependence of de-intercalation levels of Li in the anode is obtained. By the POP experiments at TIARA, it is clarified that laser produced ion beam is appropriate for the Li ion battery analysis. 41.85.Lc, 41.75.Jv, 42.62.cf.

  8. A sextupole ion beam guide to improve the efficiency and beam quality at IGISOL

    International Nuclear Information System (INIS)

    Karvonen, P.; Moore, I.D.; Sonoda, T.; Kessler, T.; Penttilae, H.; Peraejaervi, K.; Ronkanen, P.; Aystoe, J.

    2008-01-01

    The laser ion source project at the IGISOL facility, Jyvaeskylae, has motivated the development and construction of an rf sextupole ion beam guide (SPIG) to replace the original skimmer electrode. The SPIG has been tested both off-line and on-line in proton-induced fission, light-ion and heavy-ion induced fusion-evaporation reactions and, in each case, has been directly compared to the skimmer system. For both fission and light-ion induced fusion, the SPIG has improved the mass-separated ion yields by a factor of typically 4-8. Correspondingly, the transmission efficiency of both systems has been studied in simulations with and without space charge effects. The transport capacity of the SPIG has been experimentally determined to be ∼10 12 ions s -1 before space charge effects start to take effect. A direct comparison with the simulation has been made using data obtained via light-ion fusion evaporation. Both experiment and simulation show an encouraging agreement as a function of current extracted from the ion guide.

  9. Heavy ion beam micromachining on LiNbO3

    International Nuclear Information System (INIS)

    Nesprias, F.; Venturino, M.; Debray, M.E.; Davidson, J.; Davidson, M.; Kreiner, A.J.; Minsky, D.; Fischer, M.; Lamagna, A.

    2009-01-01

    In this work 3D micromachining of x-cut lithium niobate crystals was performed using the high energy heavy ion microbeam (HIM) at the Tandar Laboratory, Buenos Aires. The samples were machined using 35 Cl beams at 70 MeV bombarding energy combined with wet etching with hydrofluoric acid solutions at room temperature. As the ion beam penetrates the sample, it induces lattice damage increasing dramatically the local etching rate of the material. This technique was applied to the fabrication of 3D waveguides with long control electrodes. The resulting structures indicate that well defined contours with nearly vertical sidewalls can be made. The results also show that with fluences of only 5 x 10 12 ions/cm 2 , this technique is suitable for the fabrication of different shapes of LiNbO 3 control-waveguides that can be used in different optical devices and matched with the existing optical fibers.

  10. Applications of ion beam analysis workshop. Workshop handbook

    International Nuclear Information System (INIS)

    1995-01-01

    A workshop on applications of ion beam analysis was held at ANSTO, immediate prior to the IBMM-95 Conference in Canberra. It aims was to review developments and current status on use of ion beams for analysis, emphasizing the following aspects: fundamental ion beam research and secondary effects of ion beams; material sciences, geological, life sciences, environmental and industrial applications; computing codes for use in accelerator research; high energy heavy ion scattering and recoil; recent technological development using ion beams. The handbook contains the workshop's program, 29 abstracts and a list of participants

  11. Image-projection ion-beam lithography

    International Nuclear Information System (INIS)

    Miller, P.A.

    1989-01-01

    Image-projection ion-beam lithography is an attractive alternative for submicron patterning because it may provide high throughput; it uses demagnification to gain advantages in reticle fabrication, inspection, and lifetime; and it enjoys the precise deposition characteristics of ions which cause essentially no collateral damage. This lithographic option involves extracting low-mass ions (e.g., He + ) from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto a resist-coated wafer. While the advantages of this technology have been demonstrated experimentally by the work of IMS (Austria), many difficulties still impede extension of the technology to the high-volume production of microelectronic devices. We report a computational study of a lithography system designed to address problem areas in field size, telecentricity, and chromatic and geometric aberration. We present a novel ion-column-design approach and conceptual ion-source and column designs which address these issues. We find that image-projection ion-beam technology should in principle meet high-volume-production requirements. The technical success of our present relatively compact-column design requires that a glow-discharge-based ion source (or equivalent cold source) be developed and that moderate further improvement in geometric aberration levels be obtained. Our system requires that image predistortion be employed during reticle fabrication to overcome distortion due to residual image nonlinearity and space-charge forces. This constitutes a software data preparation step, as do correcting for distortions in electron lithography columns and performing proximity-effect corrections. Areas needing further fundamental work are identified

  12. The application of ion beams to corrosion science

    International Nuclear Information System (INIS)

    Ashworth, V.; Grant, W.A.; Proctor, R.P.M.

    1976-01-01

    Briefly, the paper provides some basic information on the use of ion beams for surface alloying and surface analysis. After a brief historical review of those fields in which the techniques are already widely applied the important features of typical ion beam machines are described. The basic processes that occur when an ion beam strikes a solid are then considered. Selected ion beam analysis techniques are then discussed. Attention is drawn, wherever possible, to applications in corrosion science and engineering. (author)

  13. Development of a beam ion velocity detector for the heavy ion beam probe

    Energy Technology Data Exchange (ETDEWEB)

    Fimognari, P. J., E-mail: PJFimognari@XanthoTechnologies.com; Crowley, T. P.; Demers, D. R. [Xantho Technologies, LLC, Madison, Wisconsin 53705 (United States)

    2016-11-15

    In an axisymmetric plasma, the conservation of canonical angular momentum constrains heavy ion beam probe (HIBP) trajectories such that measurement of the toroidal velocity component of secondary ions provides a localized determination of the poloidal flux at the volume where they originated. We have developed a prototype detector which is designed to determine the beam angle in one dimension through the detection of ion current landing on two parallel planes of detecting elements. A set of apertures creates a pattern of ion current on wires in the first plane and solid metal plates behind them; the relative amounts detected by the wires and plates determine the angle which beam ions enter the detector, which is used to infer the toroidal velocity component. The design evolved from a series of simulations within which we modeled ion beam velocity changes due to equilibrium and fluctuating magnetic fields, along with the ion beam profile and velocity dispersion, and studied how these and characteristics such as the size, cross section, and spacing of the detector elements affect performance.

  14. Development of a beam ion velocity detector for the heavy ion beam probe

    International Nuclear Information System (INIS)

    Fimognari, P. J.; Crowley, T. P.; Demers, D. R.

    2016-01-01

    In an axisymmetric plasma, the conservation of canonical angular momentum constrains heavy ion beam probe (HIBP) trajectories such that measurement of the toroidal velocity component of secondary ions provides a localized determination of the poloidal flux at the volume where they originated. We have developed a prototype detector which is designed to determine the beam angle in one dimension through the detection of ion current landing on two parallel planes of detecting elements. A set of apertures creates a pattern of ion current on wires in the first plane and solid metal plates behind them; the relative amounts detected by the wires and plates determine the angle which beam ions enter the detector, which is used to infer the toroidal velocity component. The design evolved from a series of simulations within which we modeled ion beam velocity changes due to equilibrium and fluctuating magnetic fields, along with the ion beam profile and velocity dispersion, and studied how these and characteristics such as the size, cross section, and spacing of the detector elements affect performance.

  15. Inertial confinement fusion with light ion beams

    International Nuclear Information System (INIS)

    VanDevender, J.P.; Cook, D.L.

    1986-01-01

    The Particle Beam Fusion Accelerator II (PBFA II) is presently under construction and is the only existing facility with the potential of igniting thermonuclear fuel in the laboratory. The accelerator will generate up to 5 megamperes of lithium ions at 30 million electron volts and will focus them onto an inertial confinement fusion (ICF) target after beam production and focusing have been optimized. Since its inception, the light ion approach to ICF has been considered the one that combines low cost, high risk, and high payoff. The beams are of such high density that their self-generated electric and magnetic fields were thought to prohibit high focal intensities. Recent advances in beam production and focusing demonstrate that these self-forces can be controlled to the degree required for ignition, break-even, and high gain experiments. ICF has been pursued primarily for its potential military applications. However, the high efficiency and cost-effectiveness of the light ion approach enhance its potential for commercial energy application as well

  16. Beam Dynamics Design Studies of a Superconducting Radioactive Ion Beam Post-accelerator

    CERN Document Server

    Fraser, MA; Pasini, M

    2011-01-01

    The HIE-ISOLDE project at CERN proposes a superconducting upgrade to increase the energy range and quality of the radioactive ion beams produced at ISOLDE, which are currently post- accelerated by the normal conducting REX linac. The specification and design choices for the HIE-ISOLDE linac are outlined along with a comprehensive beam dynamics study undertaken to understand and mitigate the sources of beam emittance dilution. The dominant cause of transverse emittance growth was attributed to the coupling between the transverse and longitudinal motions through the phase dependence of the rf defocusing force in the accelerating cavities. A parametric resonance induced by the coupling was observed and its excitation surveyed as a function of trans- verse phase advance using numerical simulations and analytic models to understand and avoid the regions of transverse beam instability. Other sources of emittance growth were studied and where necessary ameliorated, including the beam steering force in the quarter-wa...

  17. Electron-ion recombination in merged beams

    International Nuclear Information System (INIS)

    Wolf, A.; Habs, D.; Lampert, A.; Neumann, R.; Schramm, U.; Schuessler, T.; Schwalm, D.

    1993-01-01

    Detailed studies of recombination processes between electrons and highly charged ions have become possible by recent improvements of merged-beams experiments. We discuss in particular measurements with stored cooled ion beams at the Test Storage Ring (TSR) in Heidelberg. The cross section of dielectronic recombination was measured with high energy resolution for few-electron systems up to the nuclear charge of Cu at a relative energy up to 2.6 keV. At low energy (∼0.1 eV) total recombination rates of several ions were measured and compared with calculated radiative recombination rates. Laser-stimulated recombination of protons and of C 6+ ions was investigated as a function of the photon energy using visible radiation. Both the total recombination rates and the stimulated recombination spectra indicate that in spite of the short interaction time in merged beams, also collisional capture of electrons into weakly bound levels (related to three-body recombination) could be important

  18. Inertial fusion with heavy ion beams

    International Nuclear Information System (INIS)

    Bock, R.; Hofmann, I.; Arnold, R.

    1984-01-01

    The underlying principle of inertial confinement is the irradiation of a small pellet filled with DT-fuel by laser or particle beams in order to compress the fuel and ignite it. As 'drivers' for this process large laser installations and light-ion devices have been built since then and the results obtained during the past few years have increased our confidence, that the ignition conditions might be reached. Further conditions, however, have to be fulfilled for operating a power plant. In particular, the driver needs to have enough efficiency to be economical, and for a continuous energy production a high repetition rate and availability is required. It is less than ten years since it was realized that heavy ion beams might be a promising candidate for achieving inertial confinement fusion (ICF). Due to the evolution of high-energy and heavy-ion physics during the past 25 years, accelerators have attained a high technical and technological standard and an excellent operational reliability. Nevertheless, the heavy ion driver for a fusion power plant requires beam specifications exceeding those of existing accelerators considerably. (Auth.)

  19. Ion beam biotechnology and its application to maize breeding

    International Nuclear Information System (INIS)

    Yu Lixia; Li Wenjian; Dong Xicun; Zhou Libin; Ma Shuang

    2008-01-01

    Since the mid of 1980's, ion beam had been widely used in mutagenic breeding of various crops. Ion beam biotechnology had provided a new way for improving corn variety and creating new germplasm resources, and had promoted the development of maize breeding. The ion beam characteristics, the mutagenic mechanism and its application in maize breeding were described. (authors)

  20. MEV Energy Electrostatic Accelerator Ion Beam Emittance Measurement

    OpenAIRE

    I.G. Ignat’ev; M.I. Zakharets; S.V. Kolinko; D.P. Shulha

    2014-01-01

    The testing equipment was designed, manufactured and tried out permitting measurements of total current, current profile and emittance of an ion beam extracted from the ion beam. MeV energy electrostatic accelerator ion H + beam emittance measurement results are presented.

  1. Ar ion beam mixing at gold-silicon interfaces

    International Nuclear Information System (INIS)

    Li Yupu; Chen Jian; Liu Jiarui; Zhang Qichu

    1987-01-01

    Ar-ion beam mixing at Au-Si interface is investigated systematically as a function of the energy of Ar-ion beam (100-300 keV), dose (5 x 10 15 - 8 x 10 16 /cm 2 ), dose rate (1.6 - 16 μA/cm 2 ) and substrate temperature (77 - 573 K). Very good ion beam mixing is obtained when the Ar-ion range distribution R p ± ΔR p fits the gold film thickness, where R p is the projected range and ΔR p is the standard deviation. At LN 2 temperature, the mixing amount is proportional to the square root of the dose but independent of the dose rate and the mixing process can be explained by the random walking model for the cascade process. At room temperature the dose rate effect is observed because of the beam current induced temperature effect. The temperature effect of the mixing amount, the uniformity, the thickness of mixing layers and the phase structure are observed

  2. Simulation of electron cloud effects to heavy ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Yaman, Fatih; Gjonaj, Erion; Weiland, Thomas [Technische Universitaet Darmstadt (Germany). Institut fuer Theorie Elektromagnetischer Felder

    2011-07-01

    Electron cloud (EC) driven instability can cause beam loss, emittance growth, trajectory change and wake fields. Mentioned crucial effects of EC motivated researchers to understand the EC build up mechanism and the effects of EC to the beam. This motivation also induced the progress of developing new simulation codes. EC simulations can roughly be divided into two classes such as, softwares whose goals are to simulate the build up of the EC during the passage of a bunch train and the codes which model the interaction of a bunch with an EC. The aim of this study is to simulate the effects of electron cloud (EC) on the dynamics of heavy ion beams which are used in heavy ion synchrotron (SIS-18) at GSI. To do this, a 3-D and self-consistent simulation program based on particle in cell (PIC) method is used. In the PIC cycle, accurate solution of the Maxwell equations is obtained by employing discontinuous Galerkin finite element method. As a model, we assumed a perfectly conducting beam pipe which was uniformly (or randomly) loaded with the electrons. Then as parallel with the realistic cases in SIS-18, a single bunch consisting of U{sup +73} ions was extracted which could propagate in this pipe. Due to EC-ion bunch interaction, electrons gained energy and their displacements were observed. Electric and magnetic field components and EC charge density were calculated, numerically.

  3. Ion beam figuring of silicon aspheres

    Science.gov (United States)

    Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

    2011-03-01

    Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

  4. NSUF Ion Beam Investment Options Workshop Report

    Energy Technology Data Exchange (ETDEWEB)

    Heidrich, Brenden John [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2016-03-01

    The workshop that generated this data was convened to develop a set of recommendations (a priority list) for possible funding in the area of US domestic ion beam irradiation capabilities for nuclear energy-focused RD&D. The results of this workshop were intended for use by the Department of Energy - Office of Nuclear Energy (DOE-NE) for consideration of support for these facilities. The workshop considered, as part of the initial potential future support discussions, input submitted through the Office of Nuclear Energy Request for Information (RFI) (DE-SOL-0008318, April 13, 2015), but welcomed discussion (and presentation) of other options, whether specific or general in scope. Input from users, including DOE-NE program interests and needs for ion irradiation RD&D were also included. Participants were selected from various sources: RFI respondents, NEUP/NEET infrastructure applicants, universities with known expertise in nuclear engineering and materials science and other developed sources. During the three days from March 22-24, 2016, the workshop was held at the Idaho National Laboratory Meeting Center in the Energy Innovation Laboratory at 775 University Drive, Idaho Falls, ID 83401. Thirty-one members of the ion beam community attended the workshop, including 15 ion beam facilities, six representatives of Office of Nuclear Energy R&D programs, an industry representative from EPRI and the chairs of the NSUF User’s Organization and the NSUF Scientific Review Board. Another four ion beam users were in attendance acting as advisors to the process, but did not participate in the options assessment. Three members of the sponsoring agency, the Office of Science and Technology Innovation (NE-4) also attended the workshop.

  5. Surface generation of negative hydrogen ion beams

    International Nuclear Information System (INIS)

    Bommel, P.J.M. van.

    1984-01-01

    This thesis describes investigations on negative hydrogen ion sources at the ampere level. Formation of H - ions occurs when positive hydrogen ions capture two electrons at metal surfaces. The negative ionization probability of hydrogen at metal surfaces increases strongly with decreasing work function of the surface. The converters used in this study are covered with cesium. Usually there are 'surface plasma sources' in which the hydrogen source plasma interacts with a converter. In this thesis the author concentrates upon investigating a new concept that has converters outside the plasma. In this approach a positive hydrogen ion beam is extracted from the plasma and is subsequently reflected from a low work function converter surface. (Auth.)

  6. Deflagration wave formed by ion beam, 2

    International Nuclear Information System (INIS)

    Abe, T.; Kasuya, K.; Niu, K.; Tamba, M.

    1979-06-01

    Analyses are given for structures of deflagration waves formed by ion beams in spherical targets. The singularity at the sonic point disappears in the spherical target if the beam pressure is in balance with the plasma pressure. The expanding supersonic flow of the background plasma can be connected with the subsonic flow in the core of the target through the deflagration wave. The length and the strength of the deflagration wave in the spherical target is comparable with the corresponding ones in the slab target. (author)

  7. Highly focused ion beams in integrated circuit testing

    International Nuclear Information System (INIS)

    Horn, K.M.; Dodd, P.E.; Doyle, B.L.

    1996-01-01

    The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-dependent effects. Comparisons of IBICC measurements with three-dimensional charge transport simulations of charge collection are then presented for isolated p-channel field effect transistors under conducting and non-conducting bias conditions

  8. Constructing carbon nanotube junctions by Ar ion beam irradiation

    International Nuclear Information System (INIS)

    Ishaq, Ahmad; Ni Zhichun; Yan Long; Gong Jinlong; Zhu Dezhang

    2010-01-01

    Carbon nanotubes (CNTs) irradiated by Ar ion beams at elevated temperature were studied. The irradiation-induced defects in CNTs are greatly reduced by elevated temperature. Moreover, the two types of CNT junctions, the crossing junction and the parallel junction, were formed. And the CNT networks may be fabricated by the two types of CNT junctions. The formation process and the corresponding mechanism of CNT networks are discussed.

  9. Performance predictions of a focused ion beam from a laser cooled and compressed atomic beam

    Energy Technology Data Exchange (ETDEWEB)

    Haaf, G. ten; Wouters, S. H. W.; Vredenbregt, E. J. D.; Mutsaers, P. H. A. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Geer, S. B. van der [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Pulsar Physics, Burghstraat 47, 5614 BC Eindhoven (Netherlands)

    2014-12-28

    Focused ion beams are indispensable tools in the semiconductor industry because of their ability to image and modify structures at the nanometer length scale. Here, we report on performance predictions of a new type of focused ion beam based on photo-ionization of a laser cooled and compressed atomic beam. Particle tracing simulations are performed to investigate the effects of disorder-induced heating after ionization in a large electric field. They lead to a constraint on this electric field strength which is used as input for an analytical model which predicts the minimum attainable spot size as a function of, amongst others, the flux density of the atomic beam, the temperature of this beam, and the total current. At low currents (I < 10 pA), the spot size will be limited by a combination of spherical aberration and brightness, while at higher currents, this is a combination of chromatic aberration and brightness. It is expected that a nanometer size spot is possible at a current of 1 pA. The analytical model was verified with particle tracing simulations of a complete focused ion beam setup. A genetic algorithm was used to find the optimum acceleration electric field as a function of the current. At low currents, the result agrees well with the analytical model, while at higher currents, the spot sizes found are even lower due to effects that are not taken into account in the analytical model.

  10. Design study of primary ion provider for relativistic heavy ion collider electron beam ion source.

    Science.gov (United States)

    Kondo, K; Kanesue, T; Tamura, J; Okamura, M

    2010-02-01

    Brookhaven National Laboratory has developed the new preinjector system, electron beam ion source (EBIS) for relativistic heavy ion collider (RHIC) and National Aeronautics and Space Administration Space Radiation Laboratory. Design of primary ion provider is an essential problem since it is required to supply beams with different ion species to multiple users simultaneously. The laser ion source with a defocused laser can provide a low charge state and low emittance ion beam, and is a candidate for the primary ion source for RHIC-EBIS. We show a suitable design with appropriate drift length and solenoid, which helps to keep sufficient total charge number with longer pulse length. The whole design of primary ion source, as well as optics arrangement, solid targets configuration and heating about target, is presented.

  11. Aerosol nucleation induced by a high energy particle beam

    DEFF Research Database (Denmark)

    Enghoff, Martin Andreas Bødker; Pedersen, Jens Olaf Pepke; Uggerhøj, Ulrik I.

    2011-01-01

    We have studied sulfuric acid aerosol nucleation in an atmospheric pressure reaction chamber using a 580 MeV electron beam to ionize the volume of the reaction chamber. We find a clear contribution from ion-induced nucleation and consider this to be the first unambiguous observation of the ion......-effect on aerosol nucleation using a particle beam under conditions that resemble the Earth's atmosphere. By comparison with ionization using a gamma source we further show that the nature of the ionizing particles is not important for the ion-induced component of the nucleation. This implies that inexpensive...... ionization sources - as opposed to expensive accelerator beams - can be used for investigations of ion-induced nucleation....

  12. Neutralization principles for the Extraction and Transport of Ion Beams

    CERN Document Server

    Riege, H

    2000-01-01

    The strict application of conventional extraction techniques of ion beams from a plasma source is characterized by a natural intensity limit determined by space charge.The extracted current may be enhanced far beyond this limit by neutralizing the space charge of the extracted ions in the first extraction gap of the source with electrons injected from the opposite side. The transverse and longitudinal emittances of a neutralized ion beam, hence its brightness, are preserved. Results of beam compensation experiments, which have been carried out with a laser ion source, are resumed for proposing a general scheme of neutralizing ion sources and their adjacent low-energy beam transport channels with electron beams. Many technical applications of high-mass ion beam neutralization technology may be identified: the enhancement of ion source output for injection into high-intensity, low-and high-energy accelerators, or ion thrusters in space technology, for the neutral beams needed for plasma heating of magnetic conf...

  13. Monte Carlo simulations of secondary electron emission due to ion beam milling

    Energy Technology Data Exchange (ETDEWEB)

    Mahady, Kyle [Univ. of Tennessee, Knoxville, TN (United States); Tan, Shida [Intel Corp., Santa Clara, CA (United States); Greenzweig, Yuval [Intel Israel Ltd., Haifa (Israel); Livengood, Richard [Intel Corp., Santa Clara, CA (United States); Raveh, Amir [Intel Israel Ltd., Haifa (Israel); Fowlkes, Jason D. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Rack, Philip [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-07-01

    We present a Monte Carlo simulation study of secondary electron emission resulting from focused ion beam milling of a copper target. The basis of this study is a simulation code which simulates ion induced excitation and emission of secondary electrons, in addition to simulating focused ion beam sputtering and milling. This combination of features permits the simulation of the interaction between secondary electron emission, and the evolving target geometry as the ion beam sputters material. Previous ion induced SE Monte Carlo simulation methods have been restricted to predefined target geometries, while the dynamic target in the presented simulations makes this study relevant to image formation in ion microscopy, and chemically assisted ion beam etching, where the relationship between sputtering, and its effects on secondary electron emission, is important. We focus on a copper target, and validate our simulation against experimental data for a range of: noble gas ions, ion energies, ion/substrate angles and the energy distribution of the secondary electrons. We then provide a detailed account of the emission of secondary electrons resulting from ion beam milling; we quantify both the evolution of the yield as high aspect ratio valleys are milled, as well as the emission of electrons within these valleys that do not escape the target, but which are important to the secondary electron contribution to chemically assisted ion induced etching.

  14. Beam analysis spectrometer for relativistic heavy ions

    International Nuclear Information System (INIS)

    Schimmerling, W.; Subramanian, T.S.; McDonald, W.J.; Kaplan, S.N.; Sadoff, A.; Gabor, G.

    1983-01-01

    A versatile spectrometer useful for measuring the mass, charge, energy, fluence and angular distribution of primaries and fragments associated with relativistic heavy ion beams is described. The apparatus is designed to provide accurate physical data for biology experiments and medical therapy planning as a function of depth in tissue. The spectrometer can also be used to measure W, the average energy to produce an ion pair, range-energy, dE/dx, and removal cross section data of interest in nuclear physics. (orig.)

  15. Measurement of ultra-low ion energy of decelerated ion beam using a deflecting electric field

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P.; Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2015-12-15

    In investigation on ultra-low-energy ion bombardment effect on DNA, an ion beam deceleration lens was developed for high-quality ultra-low-energy ion beam. Measurement of the ion energy after deceleration was necessary to confirm the ion beam really decelerated as theoretically predicted. In contrast to conventional methods, this work used a simple deflecting electrostatic field after the deceleration lens to bend the ion beam. The beam bending distance depended on the ion energy and was described and simulated. A system for the measurement of the ion beam energy was constructed. It consisted of a pair of parallel electrode plates to generate the deflecting electrical field, a copper rod measurement piece to detect ion beam current, a vernier caliper to mark the beam position, a stepping motor to translate the measurement rod, and a webcam-camera to read the beam bending distance. The entire system was installed after the ion-beam deceleration lens inside the large chamber of the bioengineering vertical ion beam line. Moving the measurement rod across the decelerated ion beam enabled to obtain beam profiles, from which the beam bending distance could be known and the ion beam energy could be calculated. The measurement results were in good agreement with theoretical and simulated results.

  16. Production of microbunched beams of very highly charged ions with an electron beam ion source

    International Nuclear Information System (INIS)

    Stoeckli, M.P.

    1998-01-01

    Electron beam ion sources produce very highly charged ions most efficiently in a batch mode as the confinement time can be directly optimized for the production of the desired charge state. If, after confinement, the voltage of the ion-confining downstream dam is lowered rapidly, all ions escape and form an ion beam pulse with a length of a few tens of μs. Raising the main trap voltage while maintaining a constant dam voltage in a open-quotes spill-over expulsionclose quotes reduces the energy spread of the expelled ions. The longer time periods of open-quotes slow-,close quotes open-quotes leaky batch mode-,close quotes and open-quotes direct current (dc) batch mode-close quotes expulsions allow for increasing the ion beam duty cycle. Combining the rapid expulsion with one of the latter methods allows for the expulsion of the ions of a single batch in many small microbunches with variable intervals, maintaining the low energy spread and the increased duty cycle of slow expulsions. Combining the open-quotes microbunchingclose quotes with open-quotes dc batch mode productionclose quotes and a multitrap operation will eventually allow for the production of equally intense ion bunches over a wide range of frequencies without any deadtime, and with minimal compromise on the most efficient production parameters. copyright 1998 American Institute of Physics

  17. Nanofabrication by ion-beam sputtering fundamentals and applications

    CERN Document Server

    Som, Tapobrata

    2012-01-01

    Considerable attention has been paid to ion beam sputtering as an effective way to fabricate self-organized nano-patterns on various substrates. The significance of this method for patterning surfaces is that the technique is fast, simple, and less expensive. The possibility to create patterns on very large areas at once makes it even more attractive. This book reviews various fascinating results, understand the underlying physics of ion induced pattern formation, to highlight the potential applications of the patterned surfaces, and to explore the patterning behavior by different irradiation

  18. Ion-acoustic solitons in a plasma with electron beam

    International Nuclear Information System (INIS)

    Esfandyari, A. R.; Khorram, S.

    2001-01-01

    Ion-acoustic solitons in a collisionless plasma consisting of warm ions, hot isothermal electrons and a electron beam are studied by using the reductive perturbation method. The basic set of fluid equations is reduced to Korteweg-de Vries and modified Korteweg-de Vries temperature and electron beam on ion acoustic equations. The effect of ion solitons are investigated

  19. Condensed matter physics with radioactive ion beams

    International Nuclear Information System (INIS)

    Haas, H.

    1996-01-01

    An overview of the present uses of radioactive ion beams from ISOLDE for condensed matter research is presented. As simple examples of such work, tracer studies of diffusion processes with radioisotopes and blocking/channeling measurements of emitted particles for lattice location are discussed. Especially the application of nuclear hyperfine interaction techniques such as PAC or Moessbauer spectroscopy has become a powerful tool to study local electronic and structural properties at impurities. Recently, interesting information on impurity properties in semiconductors has been obtained using all these methods. The extreme sensitivity of nuclear techniques makes them also well suited for investigations of surfaces, interfaces, and biomolecules. Some ideas for future uses of high energy radioactive ion beams beyond the scope of the present projects are outlined: the study of diffusion in highly immiscible systems by deep implantation, nuclear polarization with the tilted-foil technique, and transmutation doping of wide-bandgap semiconductors. (orig.)

  20. Ion beam therapy fundamentals, technology, clinical applications

    CERN Document Server

    2012-01-01

    The book provides a detailed, up-to-date account of the basics, the technology, and the clinical use of ion beams for radiation therapy. Theoretical background, technical components, and patient treatment schemes are delineated by the leading experts that helped to develop this field from a research niche to its current highly sophisticated and powerful clinical treatment level used to the benefit of cancer patients worldwide. Rather than being a side-by-side collection of articles, this book consists of related chapters. It is a common achievement by 76 experts from around the world. Their expertise reflects the diversity of the field with radiation therapy, medical and accelerator physics, radiobiology, computer science, engineering, and health economics. The book addresses a similarly broad audience ranging from professionals that need to know more about this novel treatment modality or consider to enter the field of ion beam therapy as a researcher. However, it is also written for the interested public an...

  1. Ion sources development at GANIL for radioactive beams and high charge state ions

    International Nuclear Information System (INIS)

    Leroy, R.; Barue, C.; Canet, C.; Dupuis, M.; Flambard, J.L.; Gaubert, G.; Gibouin, S.; Huguet, Y.; Jardin, P.; Lecesne, N.; Leherissier, P.; Lemagnen, F.; Pacquet, J.Y.; Pellemoine-Landre, F.; Rataud, J.P.; Saint-Laurent, M.G.; Villari, A.C.C.; Maunoury, L.

    2001-01-01

    The GANIL laboratory has in charge the production of ion beams for nuclear and non nuclear physics. This article reviews the last developments that are underway in the fields of radioactive ion beam production, increase of the metallic ion intensities and production of highly charges ion beams. (authors)

  2. In situ ion-beam analysis and modification of sol-gel zirconia thin films

    International Nuclear Information System (INIS)

    Levine, T.E.; Mayer, J.W.

    1995-01-01

    We report the investigation of ion-beam-induced densification of sol-gel zirconia thin films via in situ ion backscattering spectrometry. We have irradiated three regions of a sample with neon, argon, and krypton ions. For each ion species, a series of irradiation and analysis steps were performed using an interconnected 3 MV tandem accelerator. The technique offers the advantages of minimizing the variation of experimental parameters and sequentially monitoring the densification phenomenon with increasing ion dose

  3. A Comparison of Modifications Induced by Li3+ and Ag14+ Ion Beam in Spectroscopic Properties of Bismuth Alumino-Borosilicate Glass Thin Films

    Directory of Open Access Journals (Sweden)

    Ravneet Kaur

    2013-01-01

    Full Text Available Ion irradiation effects on the glass network and structural units have been studied by irradiating borosilicate glass thin film samples with 50 MeV Li3+ and 180 MeV Ag14+ swift heavy ions (SHI at different fluence rates ranging from 1012 ions/cm2 to 1014 ions/cm2. Glass of the composition (65-x Bi2O3-10Al2O3-(65-y B2O3-25SiO2 (x = 45, 40; y = 20, 25 has been prepared by melt quench technique. To study the effects of ionizing radiation, the glass thin films have been prepared from these glasses and characterized using XRD, FTIR, and UV-Vis spectroscopic techniques. IR spectra are used to study the structural arrangements in the glass before and after irradiation. The values of optical band gap, Urbach energy, and refractive index have been calculated from the UV-Vis measurements. The variation in optical parameters with increasing Bi2O3 content has been analyzed and discussed in terms of changes occurring in the glass network. A comparative study of the influence of Li3+ ion beam on structural and optical properties of the either glass system with Ag14+ ion is done. The results have been explained in the light of the interaction that SHI undergo on entering the material.

  4. Simulations of multistage intense ion beam acceleration

    International Nuclear Information System (INIS)

    Slutz, S.A.; Poukey, J.W.

    1992-01-01

    An analytic theory for magnetically insulated, multistage acceleration of high intensity ion beams, where the diamagnetic effect due to electron flow is important, has been presented by Slutz and Desjarlais. The theory predicts the existence of two limiting voltages called V 1 (W) and V 2 (W), which are both functions of the injection energy qW of ions entering the accelerating gap. As the voltage approaches V 1 (W), unlimited beam-current density can penetrate the gap without the formation of a virtual anode because the dynamic gap goes to zero. Unlimited beam current density can penetrate an accelerating gap above V 2 (W), although a virtual anode is formed. It was found that the behavior of these limiting voltages is strongly dependent on the electron density profile. The authors have investigated the behavior of these limiting voltages numerically using the 2-D particle-in-cell (PIC) code MAGIC. Results of these simulations are consistent with the superinsulated analytic results. This is not surprising, since the ignored coordinate eliminates instabilities known to be important from studies of single stage magnetically insulated ion diodes. To investigate the effect of these instabilities the authors have simulated the problem with the 3-D PIC code QUICKSILVER, which indicates behavior that is consistent with the saturated model

  5. Ion accumulation and space charge neutralization in intensive electron beams for ion sources and electron cooling

    International Nuclear Information System (INIS)

    Shirkov, G.D.

    1996-01-01

    The Electron Beam Ion Sources (EBIS), Electron Beam Ion Traps (EBIT) and electron beams for electron cooling application have the beam parameters in the same ranges of magnitudes. EBIS and EBIT produce and accumulate ions in the beam due to electron impact ionization. The cooling electron beam accumulates positive ions from the residual gas in the accelerator chamber during the cooling cycle. The space charge neutralization of cooling beam is also used to reduce the electron energy spread and enhance the cooling ability. The advanced results of experimental investigations and theoretical models of the EBIS electron beams are applied to analyze the problem of beam neutralization in the electron cooling techniques. The report presents the analysis of the most important processes connected with ion production, accumulation and losses in the intensive electron beams of ion sources and electron cooling systems for proton and ion colliders. The inelastic and elastic collision processes of charged particles in the electron beams are considered. The inelastic processes such as ionization, charge exchange and recombination change the charge states of ions and neutral atoms in the beam. The elastic Coulomb collisions change the energy of particles and cause the energy redistribution among components in the electron-ion beams. The characteristic times and specific features of ionization, beam neutralization, ion heating and loss in the ion sources and electron cooling beams are determined. The dependence of negative potential in the beam cross section on neutralization factor is studied. 17 refs., 5 figs., 1 tab

  6. Broad beam ion sources and some surface processes

    International Nuclear Information System (INIS)

    Neumann, H.; Scholze, F.; Tarz, M.; Schindler, A.; Wiese, R.; Nestler, M.; Blum, T.

    2005-01-01

    Modern broad-beam multi-aperture ion sources are widely used in material and surface technology applications. Customizing the generated ion beam properties (i. e. the ion current density profile) for specific demands of the application is a main challenge in the improvement of the ion beam technologies. First we introduce ion sources based on different plasma excitation principles shortly. An overview of source plasma and ion beam measurement methods deliver input data for modelling methods. This beam profile modelling using numerical trajectory codes and the validation of the results by Faraday cup measurements as a basis for ion beam profile design are described. Furthermore possibilities for ex situ and in situ beam profile control are demonstrated, like a special method for in situ control of a linear ion source beam profile, a grid modification for circular beam profile design and a cluster principle for broad beam sources. By means of these methods, the beam shape may be adapted to specific technological demands. Examples of broad beam source application in ion beam figuring of optical surfaces, modification of stainless steel, photo voltaic processes and deposition of EUVL-multilayer stacks are finally presented. (Author)

  7. Nuclear fission induced by heavy ions

    International Nuclear Information System (INIS)

    Newton, J.O.

    1988-09-01

    Because the accelerators of the 50's and 60's mostly provided beams of light ions, well suited for studying individual quantum states of low angular momentum or reactions involving the transfer of one or two nucleons, the study of fission, being an example of large-scale collective motion, has until recently been outside of the mainstream of nuclear research. This situation has changed in recent years, due to the new generation of accelerators capable of producing beams of heavy ions with energies high enough to overcome the Coulomb barriers of all stable nuclei. These have made possible the study of new examples of large-scale collective motions, involving major rearrangements of nuclear matter, such as deep-inelastic collisions and heavy-ion fusion. Perhaps the most exciting development in the past few years is the discovery that dissipative effects (nuclear viscosity) play an important role in fission induced by heavy ions, contrary to earlier assumptions that the viscosity involved in fission was very weak and played only a minor role. This review will be mainly concerned with developments in heavy-ion induced fission during the last few years and have an emphasis on the very recent results on dissipative effects. Since heavy-ion bombardment usually results in compound systems with high excitation energies and angular momenta, shell effects might be expected to be small, and the subject of low energy fission, where they are important, will not be addressed. 285 refs., 58 figs

  8. Development of the Holifield Radioactive Ion Beam Facility

    International Nuclear Information System (INIS)

    Tatum, B.A.

    1997-01-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) construction project has been completed and the first radioactive ion beam has been successfully accelerated. The project, which began in 1992, has involved numerous facility modifications. The Oak Ridge Isochronous Cyclotron has been converted from an energy booster for heavy ion beams to a light ion accelerator with internal ion source. A target-ion source and mass analysis system have been commissioned as key components of the facility's radioactive ion beam injector to the 25MV tandem electrostatic accelerator. Beam transport lines have been completed, and new diagnostics for very low intensity beams have been developed. Work continues on a unified control system. Development of research quality radioactive beams for the nuclear structure and nuclear astrophysics communities continues. This paper details facility development to date

  9. Mutation induction of orchids by ion beams

    International Nuclear Information System (INIS)

    Affrida Abu Hassan; Zaiton Ahmad; Sakinah Ariffin; Oono, Yutaka; Hase, Yoshihiro; Shikazono; Naoya; Narumi, Issay; Tanaka, Atsushi

    2010-01-01

    Mutation induction using ionizing radiation provides an effective alternative means for improvement of orchids. In this study, ion beams were used because they have much higher linear energy transfer (LET) than X-rays or gamma rays, and subsequently lead to higher mutation frequency and broad mutation spectrum. The proto corm-like bodies (PLBs) of three orchid species (Dendrobium crumenatum, Dendrobium mirbellianum) were irradiated at various doses with 320 MeV 12 C 6+ ions accelerated by Azimuthally Varying Field (AVF) cyclotron at JAEAs Takasaki Ion Accelerators for Advanced Radiation Application (TIARA). The optimum irradiation condition and the effect of irradiation on each species were studied, particularly on flower colour and morphology, flowering habit and insect resistance. Dose effects on plantlet regeneration for each species were also obtained. Some morphological changes were observed in flowers of Dendrobium crumenatum, whilst one insect resistant mutant was obtained in Dendrobium mirbellianum. (author)

  10. Focused ion beam technology and ultimate applications

    International Nuclear Information System (INIS)

    Gierak, Jacques

    2009-01-01

    In this topical review, the potential of the focused ion beam (FIB) technology and ultimate applications are reviewed. After an introduction to the technology and to the operating principles of liquid metal ion sources (LMIS), of ion optics and instrument architectures, several applications are described and discussed. First, the application of FIB for microcircuit inspection, metrology and failure analysis is presented. Then, we introduce and illustrate some advanced patterning schemes we propose as next generation FIB processing examples. These patterning schemes are (i) local defect injection or smoothing in magnetic thin film direct patterning, (ii) functionalization of graphite substrates to guide organization of clusters, (iii) local and selective epitaxy of III–V semiconductor quantum dots and (iv) FIB patterned solid-state nanopores for biological molecules manipulation and analysis. We conclude this work by giving our vision of the future developments for FIB technology. (topical review)

  11. Amorphization of metals by ion implantation and ion beam mixing

    International Nuclear Information System (INIS)

    Rauschenbach, B.; Heera, V.

    1988-01-01

    Amorphous metallic systems can be formed either by high-fluence ion implantation of glassforming species or by irradiation of layered metal systems with inert gas ions. Both techniques and experimental examples are presented. Empirical rules are discussed which predict whether a given system can be transformed into an amorphous phase. Influence of temperature, implantation dose and pre-existing crystalline metal composition on amorphization is considered. Examples are given of the implantation induced amorphous structure, recrystallization and formation of quasicrystalline structures. (author)

  12. Coherent electromagnetic radiation of a combined electron-ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Pankratov, S G; Samoshenkov, Yu K [Vsesoyuznyj Nauchno-Issledovatel' skij Inst. Optiko-Fizicheskikh Izmerenij, Moscow (USSR)

    1977-07-01

    The intensity of coherent electromagnetic radiation due to interaction of a modulated electron beam with a modulated ion beam is calculated. It is shown that the radiation intensity has a sharp maximum at the frequency equal to the difference of the modulation frequency of the electron and ion beams. The results obtained are compared with those corresponding to the scattering of a modulated electron beam on randomly distributed gas ions.

  13. Heavy-ion induced desorption of a TiZrV coated vacuum chamber bombarded with 5 MeV/u Ar8+ beam at grazing incidence

    International Nuclear Information System (INIS)

    Hedlund, E.; Malyshev, O. B.; Westerberg, L.; Krasnov, A.; Semenov, A. S.; Leandersson, M.; Zajec, B.; Kollmus, H.; Bellachioma, M. C.; Bender, M.; Kraemer, A.; Reich-Sprenger, H.

    2009-01-01

    TiZrV nonevaporable getter (NEG) coated vacuum chambers is a new vacuum technology which is already used in many particle accelerators worldwide. This coating is also of interest for heavy-ion accelerator vacuum chambers. Heavy-ion desorption yields from an activated as well as a CO saturated NEG coated tube have been measured with 5 MeV/u Ar 8+ beam. The sticking probability of the NEG film was obtained by using the partial pressure ratios on two sides of the NEG coated tube. These ratios were compared to results of modeling of the experimental setup with test particle Monte Carlo and angular coefficient methods. The partial pressures inside the saturated NEG coated tube bombarded with heavy ions were up to 20 times larger than those inside the activated one. However, the partial pressure of methane remained the same. The value of the total desorption yield from the activated NEG coated tube is 2600 molecules/ion. The desorption yields after saturation for CH 4 , H 2 , and CO 2 were found to be very close to the yields measured after the activation, while CO increased by up to a factor of 5. The total desorption yield for the saturated tube is up to 7000 molecules/ion. The large value of the desorption yield of the activated NEG coated tube, an order of magnitude higher than the desorption yield from a stainless steel tube at normal incident angle, could be explained by the grazing incident angle

  14. Development of ion/proton beam equipment for industrial uses

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Byung Ho; Lee, J. H.; Cho, Y. S.; Joo, P. K.; Kang, S. S.; Song, W. S.; Kim, H. J.; Chang, G. H.; Bang, S. W

    1999-12-01

    KAERI has possessed design and fabrication technologies of various ion sources including Duoplasmatron and DuoPiGatron developed by R and D projects of the long-term nuclear technology development program. In order to industrialize ion beam equipments utilizing these ion sources, a technology transfer project for a technology transfer project for a domestic firm has been performed. Under this project, engineers of the firm have been trained through classroom lectures of ion beam principles and OJT, an ion/proton beam equipment (DEMO equipment) has been designed, assembled and commissioned jointly with the engineers. Quality of the ion sources has been quantified, and technologies for ion beam equipment construction, functional test and application research have been developed. The DEMO equipment, which consists of an ion source, power supplies, vacuum, cooling and target systems, has been fabricated and tested to secure stability and reliability for industrial uses. Various characteristic tests including high voltage insulation, beam extraction, beam current measuring, etc. have been performed. This DEMO can be utilized for ion sources development as well as ion beam process development for various industrial products. Engineers of the firm have been trained for the industrialization of ion beam equipment and joined in beam application technology development to create industrial needs of beam equipment. (author)

  15. Ion beam induced modification of exchange interaction and spin-orbit coupling in the Co2FeSi Heusler compound

    International Nuclear Information System (INIS)

    Hamrle, J; Blomeier, S; Gaier, O; Hillebrands, B; Schneider, H; Jakob, G; Reuscher, B; Brodyanski, A; Kopnarski, M; Postava, K; Felser, C

    2007-01-01

    A Co 2 FeSi (CFS) film with L2 1 structure was irradiated with different fluences of 30 keV Ga + ions. Structural modifications were subsequently studied using the longitudinal (LMOKE) and quadratic (QMOKE) magneto-optical Kerr effect. Both the coercivity and the LMOKE amplitude were found to show a similar behaviour upon irradiation: they are nearly constant up to ion fluences of ∼6 x 10 15 ion cm -2 , while they decrease with further increasing fluences and finally vanish at a fluence of ∼9 x 10 16 ion cm -2 , when the sample becomes paramagnetic. However, contrary to this behaviour, the QMOKE signal nearly vanishes even for the smallest applied fluence of 3 x 10 14 ion cm -2 . We attribute this reduction of the QMOKE signal to an irradiation-induced degeneration of second or higher order spin-orbit coupling, which already happens at small fluences of 30 keV Ga + ions. On the other hand, the reduction of coercivity and LMOKE signal with high ion fluences is probably caused by a reduction of the exchange interaction within the film material

  16. Development and Commissioning of an External Beam Facility in the Union College Ion Beam Analysis Laboratory

    Science.gov (United States)

    Yoskowitz, Joshua; Clark, Morgan; Labrake, Scott; Vineyard, Michael

    2015-10-01

    We have developed an external beam facility for the 1.1-MV tandem Pelletron accelerator in the Union College Ion Beam Analysis Laboratory. The beam is extracted from an aluminum pipe through a 1 / 4 ' ' diameter window with a 7.5- μm thick Kapton foil. This external beam facility allows us to perform ion beam analysis on samples that cannot be put under vacuum, including wet samples and samples too large to fit into the scattering chamber. We have commissioned the new facility by performing proton induced X-ray emission (PIXE) analysis of several samples of environmental interest. These include samples of artificial turf, running tracks, and a human tooth with an amalgam filling. A 1.7-MeV external proton beam was incident on the samples positioned 2 cm from the window. The resulting X-rays were measured using a silicon drift detector and were analyzed using GUPIX software to determine the concentrations of elements in the samples. The results on the human tooth indicate that while significant concentrations of Hg, Ag, and Sn are present in the amalgam filling, only trace amounts of Hg appear to have leached into the tooth. The artificial turf and running tracks show rather large concentrations of a broad range of elements and trace amounts of Pb in the turf infill.

  17. Broad ion beam serial section tomography

    Energy Technology Data Exchange (ETDEWEB)

    Winiarski, B., E-mail: b.winiarski@manchester.ac.uk [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Materials Division, National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Gholinia, A. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Mingard, K.; Gee, M. [Materials Division, National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Thompson, G.E.; Withers, P.J. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom)

    2017-01-15

    Here we examine the potential of serial Broad Ion Beam (BIB) Ar{sup +} ion polishing as an advanced serial section tomography (SST) technique for destructive 3D material characterisation for collecting data from volumes with lateral dimensions significantly greater than 100 µm and potentially over millimetre sized areas. Further, the associated low level of damage introduced makes BIB milling very well suited to 3D EBSD acquisition with very high indexing rates. Block face serial sectioning data registration schemes usually assume that the data comprises a series of parallel, planar slices. We quantify the variations in slice thickness and parallelity which can arise when using BIB systems comparing Gatan PECS and Ilion BIB systems for large volume serial sectioning and 3D-EBSD data acquisition. As a test case we obtain 3D morphologies and grain orientations for both phases of a WC-11%wt. Co hardmetal. In our case we have carried out the data acquisition through the manual transfer of the sample between SEM and BIB which is a very slow process (1–2 slice per day), however forthcoming automated procedures will markedly speed up the process. We show that irrespective of the sectioning method raw large area 2D-EBSD maps are affected by distortions and artefacts which affect 3D-EBSD such that quantitative analyses and visualisation can give misleading and erroneous results. Addressing and correcting these issues will offer real benefits when large area (millimetre sized) automated serial section BIBS is developed. - Highlights: • In this work we examine how microstructures can be reconstructed in three-dimensions (3D) by serial argon broad ion beam (BIB) milling, enabling much larger volumes (>250×250×100µm{sup 3}) to be acquired than by serial section focused ion beam-scanning electron microscopy (FIB-SEM). • The associated low level of damage introduced makes BIB milling very well suited to 3D-EBSD acquisition with very high indexing rates. • We explore

  18. Focused ion beam milling of carbon fibres

    International Nuclear Information System (INIS)

    Huson, Mickey G.; Church, Jeffrey S.; Hillbrick, Linda K.; Woodhead, Andrea L.; Sridhar, Manoj; Van De Meene, Allison M.L.

    2015-01-01

    A focused ion beam has been used to mill both individual carbon fibres as well as fibres in an epoxy composite, with a view to preparing flat surfaces for nano-indentation. The milled surfaces have been assessed for damage using scanning probe microscopy nano-indentation and Raman micro-probe analysis, revealing that FIB milling damages the carbon fibre surface and covers surrounding areas with debris of disordered carbon. The debris is detected as far as 100 μm from the milling site. The energy of milling as well as the orientation of the beam was varied and shown to have an effect when assessed by Raman spectroscopy. - Highlights: • Focused ion beam (FIB) milling was used to mill flat surfaces on carbon fibres. • Raman spectroscopy showed amorphous carbon was generated during FIB milling. • The amorphous debris is detected as far as 100 μm from the milling site. • This surface degradation was confirmed by nano-indentation experiments.

  19. Nanodevices produced with focussed ion beams

    International Nuclear Information System (INIS)

    Doetsch, U.; Wieck, A.D.

    1998-01-01

    In directly writing the 30 nm focus of a focussed Ga-ion beam (FIB) with an energy of 100 keV we define insulating lines in two-dimensional electronic layers in semiconductors. Ga ions act in GaAs and silicon as deep impurities or p-type doping, respectively. In this way the insulation by such written lines is due to lateral depletion within npn-like interfaces. In writing two FIB lines with a close spacing we define conducting channels between them. In applying a voltage of several Volts to the adjacent areas of the channel relative to it we can tune the effective width of the channel in the range of a few 100 nm to zero and obtain thus a one-dimensional field-effect-transistor-type structure. This transistor exhibits a pure lateral field effect and is thus topologically very different to current transistor concepts. Due to its particular geometry it is called in-plane-gate (IPG) transistor, since the gate and the channel are in the same plane. The fabrication of this type of transistor is thus completely maskless and does not require any alignment procedures since gate, source and drain are all written in the same writing process. Due to the computer-control of the beam deflection even more complex structures are just a question of software and do not need a set of specific masks or photoresist like in the classical lithography. The required line ion dose is of the order of 10 6 cm -1 which means that there are about 100 ions per μm implanted. For devices with maximum micron dimensions only a few hundred ions need thus to be implanted. (orig.)

  20. Performance with lead ions of the LHC beam dump system

    CERN Document Server

    Bruce, R; Jensen, L; Lefèvre, T; Weterings, W

    2007-01-01

    The LHC beam dump system must function safely with 208Pb82+ions. The differences with respect to the LHC proton beams are briefly recalled, and the possible areas for performance concerns discussed, in particular the various beam intercepting devices and the beam instrumentation. Energy deposition simulation results for the most critical elements are presented, and the conclusions drawn for the lead ion operation. The expected performance of the beam instrumentation systems are reviewed in the context of the damage potential of the ion beam and the required functionality of the various safety and post-operational analysis requirements.

  1. A radioactive ion beam facility using photofission

    CERN Document Server

    Diamond, W T

    1999-01-01

    Use of a high-power electron linac as the driver accelerator for a Radioactive Ion Beam (RIB) facility is proposed. An electron beam of 30 MeV and 100 kW can produce nearly 5x10 sup 1 sup 3 fissions/s from an optimized sup 2 sup 3 sup 5 U target and about 60% of this from a natural uranium target. An electron beam can be readily transmitted through a thin window at the exit of the accelerator vacuum system and transported a short distance through air to a water-cooled Bremsstrahlung-production target. The Bremsstrahlung radiation can, in turn, be transported through air to the isotope-production target. This separates the accelerator vacuum system, the Bremsstrahlung target and the isotope-production target, reducing remote handling problems. The electron beam can be scanned over a large target area to reduce the power density on both the Bremsstrahlung and isotope-production targets. These features address one of the most pressing technological challenges of a high-power RIB facility, namely the production o...

  2. Deflagration wave formed by ion beam, 3

    International Nuclear Information System (INIS)

    Niu, Keishiro; Abe, Takashi; Tamba, Moritake.

    1980-01-01

    An analysis is given for the structure of the deflagration wave which is formed in a target bombarded by an ion beam. Stationary deflagration and/or detonation waves are formed at the surface of the target in a case in which the reaction energy of direct fusion and/or the beam energy deposited in the target are less than a critical value. On the other hand, no solution for stationary wave exists, if the energy deposited in the wave exceeds a critical value. In the latter case, the time-dependent fundamental equations reduce approximately to a self-similar type of equations. Numerical integrations are carried out for this type of differential equations, and an example of self-similar deflagration wave numerically obtained is plotted in the figures. (author)

  3. Development of plant mutation techniques using ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Si Yong; Park, In Sook; Song, Hi Sup; Kim, Dong Sub; Kim, Soo Yeon

    2006-06-15

    It has been reported that ion beam with high liner energy transfer (LET) show relative high biological effectiveness (RBE) and more effective for induced plant mutation than low LET radiation i.e., X-rays, gamma rays and electrons. This study was conducted to induce mutation of in vitro cultured orchid and Chrysanthemum using proton beam of the MC-50 cyclotron (50 MeV) at the Korea Institute of Radiological and Medical Science. In vitro cultured stems of chrysanthemum(cv. Migok) and protocom-like bodies(PLBs) of Dendrobium orchid (cv. Kingianum) placed in the plastic petridish (5.5cm in diameter) with agar medium were irradiated by the proton beam with various dose ranges of 10, 25, 50, 100 Gy under the condition of 5nA beam current. Those irradiated plants were transferred to subculture media and then investigated growth characteristics. Shoot growth of chrysanthemum and orchid was decreased by increase of irradiation dose. In particular, new shoot formation was hardly founded over 50Gy in chrysanthemum and 100 Gy in orchid. Some leaf mutants were observed at the 25 Gy and 50 Gy irradiated PLBs of the orchid. The dry seeds of hot pepper, rapeseed, rice and perilla also were irradiated with proton beam of MC-50 cyclotron and then measured germination rate and early growth of M1 plants compared with gamma ray irradiation.

  4. Development of plant mutation techniques using ion beam

    International Nuclear Information System (INIS)

    Kang, Si Yong; Park, In Sook; Song, Hi Sup; Kim, Dong Sub; Kim, Soo Yeon

    2006-06-01

    It has been reported that ion beam with high liner energy transfer (LET) show relative high biological effectiveness (RBE) and more effective for induced plant mutation than low LET radiation i.e., X-rays, gamma rays and electrons. This study was conducted to induce mutation of in vitro cultured orchid and Chrysanthemum using proton beam of the MC-50 cyclotron (50 MeV) at the Korea Institute of Radiological and Medical Science. In vitro cultured stems of chrysanthemum(cv. Migok) and protocom-like bodies(PLBs) of Dendrobium orchid (cv. Kingianum) placed in the plastic petridish (5.5cm in diameter) with agar medium were irradiated by the proton beam with various dose ranges of 10, 25, 50, 100 Gy under the condition of 5nA beam current. Those irradiated plants were transferred to subculture media and then investigated growth characteristics. Shoot growth of chrysanthemum and orchid was decreased by increase of irradiation dose. In particular, new shoot formation was hardly founded over 50Gy in chrysanthemum and 100 Gy in orchid. Some leaf mutants were observed at the 25 Gy and 50 Gy irradiated PLBs of the orchid. The dry seeds of hot pepper, rapeseed, rice and perilla also were irradiated with proton beam of MC-50 cyclotron and then measured germination rate and early growth of M1 plants compared with gamma ray irradiation

  5. Mutation induction by ion beams in higher plants

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    2003-04-01

    This review mainly describes study results obtained in the Takasaki ion-beam (IB) irradiation facility (TIARA) on the mutation induction in higher plants. Biological effects like lethality and on budding of IBs (carbon, Ne and Ar) are discussed in relation with their linear energy transfer (LET), relative biological effectiveness and the developmental states in shepherd's-purse and tobacco. Induced mutation by IB are characterized by those findings that the mutation rate by C beam is 1.9 x 10{sup -6}, being 17 times higher than the electron beam, in the shepherd's-purse, that C beam induces larger structural changes than electron beam when examined by molecular mechanism of tt and gl gene mutations, and that mutation spectrum of IB is different from that of {gamma}-ray and is wider. Novel mutants are described on shepherd's-purse (pigment mutants, ultraviolet (UV)-resistant and sensitive ones, and flowering ones), disease-resistant rice, barley and tobacco plants, and flowering plants. IB mutation is possibly useful for solving the problems of environment and foods in future. (N.I.)

  6. Development of a focused ion beam micromachining system

    Energy Technology Data Exchange (ETDEWEB)

    Pellerin, J.G.; Griffis, D.; Russell, P.E.

    1988-12-01

    Focused ion beams are currently being investigated for many submicron fabrication and analytical purposes. An FIB micromachining system consisting of a UHV vacuum system, a liquid metal ion gun, and a control and data acquisition computer has been constructed. This system is being used to develop nanofabrication and nanomachining techniques involving focused ion beams and scanning tunneling microscopes.

  7. Plasma and ion beam processing at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Davis, H.A.; Henins, I.

    1994-01-01

    Efforts are underway at Los Alamos National Laboratory to utilize plasma and intense ion beam science and technology of the processing of advanced materials. A major theme involves surface modification of materials, e.g., etching, deposition, alloying, and implantation. In this paper, we concentrate on two programs, plasma source ion implantation and high-intensity pulsed ion beam deposition

  8. A beam profile monitor for heavy ion beams at high impact energies

    International Nuclear Information System (INIS)

    Hausmann, A.; Stiebing, K.E.; Bethge, K.; Froehlich, O.; Koehler, E.; Mueller, A.; Rueschmann, G.

    1994-01-01

    A beam profile monitor for heavy ion beams has been developed for the use in experiments at the Heavy Ion Synchrotron SIS at Gesellschaft fuer Schwerionenforschung Darmstadt (GSI). Four thin scintillation fibres are mounted on one wheel and scan the ion beam sequentially in two linearly independent directions. They are read out via one single photomultiplier common to all four fibres into one time spectrum, which provides all information about beam position, beam extension, time structure and lateral homogeneity of the beam. The system operates in a wide dynamic range of beam intensities. ((orig.))

  9. High spin studies with radioactive ion beams

    International Nuclear Information System (INIS)

    Garrett, J.D.

    1992-01-01

    The variety of new research possibilities afforded by the culmination of the two frontier areas of nuclear structure: high spin and studies far from nuclear stability (utilizing intense radioactive ion beams) are discussed. Topics presented include: new regions of exotic nuclear shape (e.g. superdeformation, hyperdeformation, and reflection-asymmetric shapes); the population of and consequences of populating exotic nuclear configurations; and complete spectroscopy (i.e. the overlap of state of the art low-and high-spin studies in the same nucleus)

  10. High spin studies with radioactive ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Garrett, J D [Oak Ridge National Lab., TN (United States)

    1992-08-01

    The variety of new research possibilities afforded by the culmination of the two frontier areas of nuclear structure: high spin and studies far from nuclear stability (utilizing intense radioactive ion beams) are discussed. Topics presented include: new regions of exotic nuclear shape (e.g. superdeformation, hyperdeformation, and reflection-asymmetric shapes); the population of and consequences of populating exotic nuclear configurations; and, complete spectroscopy (i.e. the overlap of state of the art low- and high-spin studies in the same nucleus). (author). 47 refs., 8 figs.

  11. Studies of the beam extraction system of the GTS-LHC electron cyclotron resonance ion source at CERN.

    Science.gov (United States)

    Toivanen, V; Küchler, D

    2016-02-01

    The 14.5 GHz GTS-LHC Electron Cyclotron Resonance Ion Source (ECRIS) provides multiply charged heavy ion beams for the CERN experimental program. The GTS-LHC beam formation has been studied extensively with lead, argon, and xenon beams with varied beam extraction conditions using the ion optical code IBSimu. The simulation model predicts self-consistently the formation of triangular and hollow beam structures which are often associated with ECRIS ion beams, as well as beam loss patterns which match the observed beam induced markings in the extraction region. These studies provide a better understanding of the properties of the extracted beams and a way to diagnose the extraction system performance and limitations, which is otherwise challenging due to the lack of direct diagnostics in this region and the limited availability of the ion source for development work.

  12. Probing surface magnetism with ion beams

    International Nuclear Information System (INIS)

    Winter, H.

    2007-01-01

    Ion beams can be used to probe magnetic properties of surfaces by a variety of different methods. Important features of these methods are related to trajectories of atomic projectiles scattered from the surface of a solid target and to the electronic interaction mechanisms in the surface region. Both items provide under specific conditions a high sensitivity for the detection of magnetic properties in the region at the topmost layer of surface atoms. This holds in particular for scattering under planar surface channeling conditions, where under grazing impact atoms or ions are reflected specularly from the surface without penetration into the subsurface region. Two different types of methods are employed based on the detection of the spin polarization of emitted or captured electrons and on spin blocking effects for capture into atomic terms. These techniques allow one to probe the long range and short range magnetic order in the surface region

  13. Electron temperature effects for an ion beam source

    International Nuclear Information System (INIS)

    Uramoto, Joshin.

    1979-05-01

    A hydrogen high temperature plasma up to 200 eV is produced by acceleration of electrons in a hot hollow cathode discharge and is used as an ion beam source. Then, two characteristics are observed: A rate of the atomic ion (H + ) number increases above 70%. A perveance of the ion beam increases above 30 times compared with that of a cold plasma, while a floating potential of an ion acceleration electrode approaches an ion acceleration potential (- 500 V) according as an increment of the electron temperature. Moreover, a neutralized ion beam can be produced by only the negative floating electrode without an external power supply. (author)

  14. Induction and characterization of Arabidopsis mutants by Ion beam

    International Nuclear Information System (INIS)

    Yoon, Y. H.; Choi, J. D.; Park, J. Y.; Lee, J. R.; Sohn, H. S.

    2008-03-01

    This study was conducted to search the proper conditions and times for irradiating proton beam to seeds generally used for induction of mutant. Arabidopsis as model plants has good characters that is a short generation time, producing a lot of seeds, sequenced genome, developed maker. This points were the best materials for plant breeding for this study. The data of inducing mutants of Arabidopsis is used to be applicate to crops have more longer generation that is the final goals of this study. The goals of this project were to inducing and characterizing arabidopsis mutants by the proton ion beam and γ-ray. As well as, the purpose of this study was securing more than 10 lines of arabidopsis mutants in this project and also to know the changed DNA structure of the mutants using the basic data for applying to the more study

  15. Induction and characterization of Arabidopsis mutants by Ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Y. H.; Choi, J. D.; Park, J. Y.; Lee, J. R.; Sohn, H. S. [Gyeongbuk Institute for Bio Industry, Andong (Korea, Republic of)

    2008-03-15

    This study was conducted to search the proper conditions and times for irradiating proton beam to seeds generally used for induction of mutant. Arabidopsis as model plants has good characters that is a short generation time, producing a lot of seeds, sequenced genome, developed maker. This points were the best materials for plant breeding for this study. The data of inducing mutants of Arabidopsis is used to be applicate to crops have more longer generation that is the final goals of this study. The goals of this project were to inducing and characterizing arabidopsis mutants by the proton ion beam and {gamma}-ray. As well as, the purpose of this study was securing more than 10 lines of arabidopsis mutants in this project and also to know the changed DNA structure of the mutants using the basic data for applying to the more study

  16. Preliminary results of spatially resolved ECR ion beam profile investigations

    International Nuclear Information System (INIS)

    Panitzsch, L.; Stalder, M.; Wimmer-Schweingruber, R.F.

    2012-01-01

    The profile of an ion beam produced in an Electron Cyclotron Resonance Ion Source (ECRIS) can vary greatly depending on the source settings and the ion-optical tuning. Strongly focussed ion beams form circular structures (hollow beams) as predicted by simulations and observed in experiments. Each of the rings is predicted to be dominated by ions with same or at least similar m/q-ratios due to ion-optical effects. To check this we performed a series of preliminary investigations to test the required tuning capabilities of our ion source. This includes beam focussing (A) and beam steering (B) using a 3D-movable extraction. Having tuned the source to deliver a beam of strongly focussed ions of different ion species and having steered this beam to match the transmittance area of the sector magnet we also recorded the ion charge state distribution of the strongly focussed beam profile at different, spatially limited positions (C). The preliminary results will be introduced within this paper: it appears that our 3D-movable extraction is very efficient to steer and to focus the beam strongly. The paper is followed by the slides of the presentation. (authors)

  17. Scintillating screens study for LEIR/LHC heavy ion beams

    CERN Document Server

    Bal, C; Lefèvre, T; Scrivens, R; Taborelli, M

    2005-01-01

    It has been observed on different machines that scintillating ceramic screens (like chromium doped alumina) are quickly damaged by low energy ion beams. These particles are completely stopped on the surface of the screens, inducing both a high local temperature increase and the electrical charging of the material. A study has been initiated to understand the limiting factors and the damage mechanisms. Several materials, ZrO2, BN and Al2O3, have been tested at CERN on LINAC3 with 4.2MeV/u lead ions. Alumina (Al2O3) is used as the reference material as it is extensively used in beam imaging systems. Boron nitride (BN) has better thermal properties than Alumina and Zirconium oxide (ZrO2). BN has in fact the advantage of increasing its electrical conductivity when heated. This contribution presents the results of the beam tests, including the post-mortem analysis of the screens and the outlook for further measurements. The strategy for the choice of the screens for the Low Energy Ion Ring (LEIR), currently under ...

  18. SPS Ion Induced Desorption Experiment

    CERN Multimedia

    Maximilien Brice

    2003-01-01

    This experiment will give a study about the induced desorption from heavy ion (Indium ion run from week 45 in SPS T4-H8 area) impacting LHC type graphite collimator. 4 different samples are located in the 4 chambers 90° one to each other: pure graphite, graphite with copper coating, graphite with NEG coating, 316LN stainless steal (reference).

  19. Recent radioactive ion beam program at RIKEN and related topics

    Indian Academy of Sciences (India)

    Recent experimental programs at RIKEN concerning RI beams are reviewed. RIKEN has the ring cyclotron (RRC) with high intense heavy-ion beams and large acceptance fragment separator, RIPS. The complex can provide high intense RI-beams. By using the high intense RI-beams, a variety of experiments have been ...

  20. Important atomic physics issues for ion beam fusion

    International Nuclear Information System (INIS)

    Bangerter, R.O.

    1985-01-01

    This paper suggests several current atomic physics questions important to ion beam fusion. Among the topics discussed are beam transport, beam-target interaction, and reactor design. The major part of the report is discussion concerning areas of research necessary to better understand beam-target interactions

  1. MeV single-ion beam irradiation of mammalian cells using the Surrey vertical nanobeam, compared with broad proton beam and X-ray irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Jeynes, J.C.G.; Merchant, M.J.; Kirkby, K.; Kirkby, N. [Surrey Ion Beam Center, Faculty of Engineering and Physical Science, University of Surrey, Guildford Surrey, GU2 7XH (United Kingdom); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: •Recently completed nanobeam at the Surrey Ion Beam Centre was used. •3.8-MeV single and broad proton beams irradiated Chinese hamster cells. •Cell survival curves were measured and compared with 300-kV X-ray irradiation. •Single ion irradiation had a lower survival part at ultra-low dose. •It implies hypersensitivity, bystander effect and cell cycle phase of cell death. -- Abstract: As a part of a systematic study on mechanisms involved in physical cancer therapies, this work investigated response of mammalian cells to ultra-low-dose ion beam irradiation. The ion beam irradiation was performed using the recently completed nanobeam facility at the Surrey Ion Beam Centre. A scanning focused vertical ion nano-beam was applied to irradiate Chinese hamster V79 cells. The V79 cells were irradiated in two different beam modes, namely, focused single ion beam and defocused scanning broad ion beam of 3.8-MeV protons. The single ion beam was capable of irradiating a single cell with a precisely controlled number of the ions to extremely low doses. After irradiation and cell incubation, the number of surviving colonies as a function of the number of the irradiating ions was measured for the cell survival fraction curve. A lower survival for the single ion beam irradiation than that of the broad beam case implied the hypersensitivity and bystander effect. The ion-beam-induced cell survival curves were compared with that from 300-kV X-ray irradiation. Theoretical studies indicated that the cell death in single ion irradiation mainly occurred in the cell cycle phases of cell division and intervals between the cell division and the DNA replication. The success in the experiment demonstrated the Surrey vertical nanobeam successfully completed.

  2. Scintillation screen materials for beam profile measurements of high energy ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Krishnakumar, Renuka

    2016-06-22

    For the application as a transverse ion beam diagnostics device, various scintillation screen materials were analysed. The properties of the materials such as light output, image reproduction and radiation stability were investigated with the ion beams extracted from heavy ion synchrotron SIS-18. The ion species (C, Ne, Ar, Ta and U) were chosen to cover the large range of elements in the periodic table. The ions were accelerated to the kinetic energies of 200 MeV/u and 300 MeV/u extracted with 300 ms pulse duration and applied to the screens. The particle intensity of the ion beam was varied from 10{sup 4} to 10{sup 9} particles per pulse. The screens were irradiated with typically 40 beam pulses and the scintillation light was captured using a CCD camera followed by characterization of the beam spot. The radiation hardness of the screens was estimated with high intensity Uranium ion irradiation. In the study, a linear light output for 5 orders of magnitude of particle intensities was observed from sensitive scintillators and ceramic screens such as Al{sub 2}O{sub 3}:Cr and Al{sub 2}O{sub 3}. The highest light output was recorded by CsI:Tl and the lowest one by Herasil. At higher beam intensity saturation of light output was noticed from Y and Mg doped ZrO{sub 2} screens. The light output from the screen depends not only on the particle intensity but also on the ion species used for irradiation. The light yield (i.e. the light intensity normalised to the energy deposition in the material by the ion) is calculated from the experimental data for each ion beam setting. It is shown that the light yield for light ions is about a factor 2 larger than the one of heavy ions. The image widths recorded exhibit a dependence on the screens material and differences up to 50 % were registered. On radiation stability analysis with high particle intensity of Uranium ions of about 6 x 10{sup 8} ppp, a stable performance in light output and image reproduction was documented from Al

  3. Large area negative ion source for high voltage neutral beams

    International Nuclear Information System (INIS)

    Poulsen, P.; Hooper, E.B. Jr.

    1979-11-01

    A source of negative deuterium ions in the multi-ampere range is described that is readily extrapolated to reactor size, 10 amp or more of neutral beam, that is of interest in future experiments and reactors. The negative ion source is based upon the double charge exchange process. A beam of positive ions is created and accelerated to an energy at which the attachment process D + M → D - + M + proceeds efficiently. The positive ions are atomically neutralized either in D 2 or in the charge exchange medium M. Atomic species make a second charge exchange collision in the charge target to form D - . For a sufficiently thick target, the beam reaches an equilibrium fraction of negative ions. For reasons of efficiency, the target is typically alkali metal vapor; this experiment uses sodium. The beam of negative ions can be accelerated to high (>200 keV) energy, the electrons stripped from the ions, and a high energy neutral beam formed

  4. Proceedings of national seminar on physics with radioactive ion beams

    International Nuclear Information System (INIS)

    Chintalapudi, S.N.; Shyam, R.

    1991-01-01

    This volume containing the proceedings of the national seminar on physics with radioactive ion beams gives a broad overview of the developments taking place in the area of nuclear physics and accelerator physics with special emphasis on the utilization of radioactive ion beams for various studies. Topics covered include studies on nuclear structure and nuclear astrophysics and the wide ranging applications of radioactive ion beams in these and other areas of nuclear sciences. Papers relevant to INIS are indexed separately

  5. Commissioning of the ion beam buncher and cooler for LEBIT

    Energy Technology Data Exchange (ETDEWEB)

    Sun, T.; Bollen, G.; Ringle, R.; Schury, P. [Michigan State University, NSCL, East Lansing, MI (United States); Michigan State University, Department of Physics and Astronomy, East Lansing, MI (United States); Schwarz, S.; Lawton, D. [Michigan State University, NSCL, East Lansing, MI (United States)

    2005-09-01

    A radiofrequency-quadrupole ion accumulator and buncher has been set-up for the low-energy-beam and ion-trap (LEBIT) facility, which is in its final commissioning phase at the NSCL/MSU. The buncher is a cryogenic system with separated cooling and accumulation stages, optimized for excellent beam quality and high performance. The completed set-up of the LEBIT ion buncher is presented as well as first experimental results on pulse forming and beam properties. (orig.)

  6. Commissioning of the ion beam buncher and cooler for LEBIT

    International Nuclear Information System (INIS)

    Sun, T.; Bollen, G.; Ringle, R.; Schury, P.; Schwarz, S.; Lawton, D.

    2005-01-01

    A radiofrequency-quadrupole ion accumulator and buncher has been set-up for the low-energy-beam and ion-trap (LEBIT) facility, which is in its final commissioning phase at the NSCL/MSU. The buncher is a cryogenic system with separated cooling and accumulation stages, optimized for excellent beam quality and high performance. The completed set-up of the LEBIT ion buncher is presented as well as first experimental results on pulse forming and beam properties. (orig.)

  7. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

  8. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

    2013-01-01

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

  9. Ion spectroscopy for improvement of the physical beam model for therapy planning in ion beam therapy

    Energy Technology Data Exchange (ETDEWEB)

    Arico, Giulia

    2016-11-23

    Helium and carbon ions enable a more conformal dose distribution, narrower penumbra and higher relative biological effectiveness than photon and proton radiotherapy. However, they may undergo nuclear fragmentation in the patient tissues and the arising secondary fragments affect the delivered biological dose distributions. Currently there is a lack of data regarding ion nuclear fragmentation. One reason is the large size (up to some meters) of the experimental setups required for the investigations. In this thesis a new method is presented, which makes use of versatile pixelated semiconductor detectors (Timepix). This method is based on tracking of single particles and pattern recognition of their signals in the detectors. Measurements were performed at the HIT facility. The mixed radiation field arising from 430 MeV/u carbon ion beams and 221 MeV/u helium ion beams in water and in PMMA targets was investigated. The amounts of primary (carbon or helium) ions detected behind targets with the same water equivalent thickness (WET) were found to be in agreement within the statistical uncertainties. However, more fragments (differences up to 20% in case of H) and narrower lateral particle distributions were measured behind the PMMA than the water targets. The spectra of ions behind tissue surrogates and corresponding water targets with the same WET were analysed. The results obtained with adipose and inner bone surrogates and with the equivalent water phantoms were found to be consistent within the uncertainties. Significant differences in the results were observed in the case of lung and cortical bone surrogates when compared to the water phantoms. The experimental results were compared to FLUKA Monte Carlo simulations. This comparison could contribute to enhance the ion interaction models currently implemented for {sup 12}C and {sup 4}He ion beams.

  10. Influence of ion beam and geometrical parameters on properties of Si thin films grown by Ar ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, Carsten; Feder, Rene; Neumann, Horst [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Leipzig (Germany)

    2012-07-01

    Ion beam sputtering (IBS) offers, in contrast to other physical vapour deposition techniques, such as magnetron sputtering or electron beam evaporation, the opportunity to change the properties of the layer forming particles (sputtered and scattered particles) by varying ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, emission angle). Consequently, these effects can be utilized to tailor thin film properties [1]. The goal is to study systematically the correlations between the primary and secondary parameters and, at last, the effects on the properties of Si thin films, such as optical properties, stress, surface topography and composition. First experimental results are presented for Ar-ion sputtering of Si.

  11. Progress toward a microsecond duration, repetitively pulsed, intense- ion beam

    International Nuclear Information System (INIS)

    Davis, H.A.; Olson, J.C.; Reass, W.A.; Coates, D.M.; Hunt, J.W.; Schleinitz, H.M.; Greenly, J.B.

    1996-01-01

    A number of intense ion beams applications are emerging requiring repetitive high-average-power beams. These applications include ablative deposition of thin films, rapid melt and resolidification for surface property enhancement, advanced diagnostic neutral beams for the next generation of Tokamaks, and intense pulsed-neutron sources. We are developing a 200-250 keV, 15 kA, 1 μs duration, 1-30 Hz intense ion beam accelerator to address these applications

  12. Induced radioactivity of a GSO scintillator by secondary fragments in carbon ion therapy and its effects on in-beam OpenPET imaging.

    Science.gov (United States)

    Hirano, Yoshiyuki; Nitta, Munetaka; Nishikido, Fumihiko; Yoshida, Eiji; Inadama, Naoko; Yamaya, Taiga

    2016-07-07

    The accumulation of induced radioactivity within in-beam PET scanner scintillators is of concern for its long-term clinical usage in particle therapy. To estimate the effects on OpenPET which we are developing for in-beam PET based on GSOZ (Zi doped Gd2SiO5), we measured the induced radioactivity of GSO activated by secondary fragments in a water phantom irradiation by a (12)C beam with an energy of 290 MeV u(-1). Radioisotopes of Na, Ce, Eu, Gd, Nd, Pm and Tb including positron emitters were observed in the gamma ray spectra of the activated GSO with a high purity Ge detector and their absolute radioactivities were calculated. We used the Monte Carlo simulation platform, Geant4 in which the observed radioactivity was assigned to the scintillators of a precisely reproduced OpenPET and the single and coincidence rates immediately after one treatment and after one-year usage were estimated for the most severe conditions. Comparing the highest coincidence rate originating from the activated scintillators (background) and the expected coincidence rate from an imaging object (signal), we determined the expected signal-to-noise ratio to be more than 7 within 3 min and more than 10 within 1 min from the scan start time. We concluded the effects of scintillator activation and their accumulation on the OpenPET imaging were small and clinical long-term usage of the OpenPET was feasible.

  13. From field evaporation to focused ion beams

    International Nuclear Information System (INIS)

    Forbes, R.G.

    2004-01-01

    Full text: This paper report various items of recent progress in the theory of field evaporation and the theory of the liquid-metal ion source. The research has, in part, been driven by a desire to find out how to reduce the beam-spot size in a focused ion beam machine, which is developing as a significant tool of nanotechnology. A major factor in determining beam spot size seems to be the behavior of the liquid-metal ion source (LMIS), and one route might be to reduce the minimum emission current of a LMIS, if this is possible. Theories of LMIS minimum emission current have been re-examined. Some progress has been made, but development of more accurate theory has been constrained by several factors, include the long-known limitations of the present theory of field evaporation (FEV). This, in turn, has stimulated a wider re-examination of FEV theory. As part of some general theoretical remarks, the following items of recent progress will be covered. Various results concerning the prediction of the field F e at which the activation energy Q for field evaporation is zero, including calculations in which vacuum electrostatic energy changes are taken into account, and another look at the views of Kingham and Tsong concerning escape charge-state. Some years ago, the following approximate formula was derived for the dependence of FEV activation energy on field F: Q=B(F e /F - 1) 2 . It has recently been possible to show that the parameter B can be estimated as B= βYΩ/8, where Y is Young's modulus, Ω is the atomic volume, and β is a correction factor of order. In the framework of the charge-draining mechanism, another look at how the activation-energy hump can be modelled, in order to predict/explain the conditions under which FEV becomes dominated by ion tunnelling rather than field evaporation. A review of the changes in LMIS theory that result from applying the equation of continuity to the metal/vacuum interface, including modifications to the theory of minimum

  14. Recent US advances in ion-beam-driven high energy density physics and heavy ion fusion

    International Nuclear Information System (INIS)

    Logan, B.G.; Bieniosek, F.M.; Celata, C.M.; Coleman, J.; Greenway, W.; Henestroza, E.; Kwan, J.W.; Lee, E.P.; Leitner, M.; Roy, P.K.; Seidl, P.A.; Vay, J.-L.; Waldron, W.L.; Yu, S.S.; Barnard, J.J.; Cohen, R.H.; Friedman, A.; Grote, D.P.; Kireeff Covo, M.; Molvik, A.W.; Lund, S.M.; Meier, W.R.; Sharp, W.; Davidson, R.C.; Efthimion, P.C.; Gilson, E.P.; Grisham, L.; Kaganovich, I.D.; Qin, H.; Sefkow, A.B.; Startsev, E.A.; Welch, D.; Olson, C.

    2007-01-01

    During the past two years, significant experimental and theoretical progress has been made in the US heavy ion fusion science program in longitudinal beam compression, ion-beam-driven warm dense matter, beam acceleration, high brightness beam transport, and advanced theory and numerical simulations. Innovations in longitudinal compression of intense ion beams by >50X propagating through background plasma enable initial beam target experiments in warm dense matter to begin within the next two years. We are assessing how these new techniques might apply to heavy ion fusion drivers for inertial fusion energy

  15. Performance of positive ion based high power ion source of EAST neutral beam injector

    International Nuclear Information System (INIS)

    Hu, Chundong; Xie, Yahong; Xie, Yuanlai; Liu, Sheng; Xu, Yongjian; Liang, Lizhen; Jiang, Caichao; Li, Jun; Liu, Zhimin

    2016-01-01

    The positive ion based source with a hot cathode based arc chamber and a tetrode accelerator was employed for a neutral beam injector on the experimental advanced superconducting tokamak (EAST). Four ion sources were developed and each ion source has produced 4 MW @ 80 keV hydrogen beam on the test bed. 100 s long pulse operation with modulated beam has also been tested on the test bed. The accelerator was upgraded from circular shaped to diamond shaped in the latest two ion sources. In the latest campaign of EAST experiment, four ion sources injected more than 4 MW deuterium beam with beam energy of 60 keV into EAST

  16. Modification of PMMA/graphite nanocomposites through ion beam technique

    Science.gov (United States)

    Singhal, Prachi; Rattan, Sunita; Avasthi, Devesh Kumar; Tripathi, Ambuj

    2013-08-01

    Swift heavy ion (SHI) irradiation is a special technique for inducing physical and chemical modifications in bulk materials. In the present work, the SHI hs been used to prepare nanocomposites with homogeneously dispersed nanoparticles. The nanographite was synthesized from graphite using the intercalation-exfoliation method. PMMA Poly(methyl methacrylate)/graphite nanocomposites have been synthesized by in situ polymerization. The prepared PMMA/graphite nanocomposite films were irradiated with SHI irradiation (Ni ion beam, 80 MeV and C ion beam, 50 MeV) at a fluence of 1×1010 to 3×1012 ions/cm2. The nanocomposite films were characterized by scanning electron microscope (SEM) and were evaluated for their electrical and sensor properties. After irradiation, significant changes in surface morphology of nanocomposites were observed as evident from the SEM images, which show the presence of well-distributed nanographite platelets. The irradiated nanocomposites exhibit better electrical and sensor properties for the detection of nitroaromatics with marked improvement in sensitivity as compared with unirradiated nanocomposites.

  17. Design of a negative ion neutral beam system for TNS

    International Nuclear Information System (INIS)

    Easoz, J.R.

    1978-05-01

    A conceptual design of a neutral beam line based on the neutralization of negative deuterium ions is presented. This work is a detailed design of a complete neutral beam line based on using negative ions from a direct extraction source. Anticipating major technological advancements, beam line components have been scaled including the negative ion sources and components for the direct energy recovery of charged beams and high speed cryogenic pumping. With application to the next step in experimental fusion reactors (TNS), the neutral beam injector system that has been designed provides 10 MW of 200 keV neutral deuterium atoms. Several arms are required for plasma ignition

  18. Extraction of space-charge-dominated ion beams from an ECR ion source: Theory and simulation

    Science.gov (United States)

    Alton, G. D.; Bilheux, H.

    2004-05-01

    Extraction of high quality space-charge-dominated ion beams from plasma ion sources constitutes an optimization problem centered about finding an optimal concave plasma emission boundary that minimizes half-angular divergence for a given charge state, independent of the presence or lack thereof of a magnetic field in the extraction region. The curvature of the emission boundary acts to converge/diverge the low velocity beam during extraction. Beams of highest quality are extracted whenever the half-angular divergence, ω, is minimized. Under minimum half-angular divergence conditions, the plasma emission boundary has an optimum curvature and the perveance, P, current density, j+ext, and extraction gap, d, have optimum values for a given charge state, q. Optimum values for each of the independent variables (P, j+ext and d) are found to be in close agreement with those derived from elementary analytical theory for extraction with a simple two-electrode extraction system, independent of the presence of a magnetic field. The magnetic field only increases the emittances of beams through additional aberrational effects caused by increased angular divergences through coupling of the longitudinal to the transverse velocity components of particles as they pass though the mirror region of the electron cyclotron resonance (ECR) ion source. This article reviews the underlying theory of elementary extraction optics and presents results derived from simulation studies of extraction of space-charge dominated heavy-ion beams of varying mass, charge state, and intensity from an ECR ion source with emphasis on magnetic field induced effects.

  19. Extraction of space-charge-dominated ion beams from an ECR ion source: Theory and simulation

    International Nuclear Information System (INIS)

    Alton, G.D.; Bilheux, H.

    2004-01-01

    Extraction of high quality space-charge-dominated ion beams from plasma ion sources constitutes an optimization problem centered about finding an optimal concave plasma emission boundary that minimizes half-angular divergence for a given charge state, independent of the presence or lack thereof of a magnetic field in the extraction region. The curvature of the emission boundary acts to converge/diverge the low velocity beam during extraction. Beams of highest quality are extracted whenever the half-angular divergence, ω, is minimized. Under minimum half-angular divergence conditions, the plasma emission boundary has an optimum curvature and the perveance, P, current density, j +ext , and extraction gap, d, have optimum values for a given charge state, q. Optimum values for each of the independent variables (P, j +ext and d) are found to be in close agreement with those derived from elementary analytical theory for extraction with a simple two-electrode extraction system, independent of the presence of a magnetic field. The magnetic field only increases the emittances of beams through additional aberrational effects caused by increased angular divergences through coupling of the longitudinal to the transverse velocity components of particles as they pass though the mirror region of the electron cyclotron resonance (ECR) ion source. This article reviews the underlying theory of elementary extraction optics and presents results derived from simulation studies of extraction of space-charge dominated heavy-ion beams of varying mass, charge state, and intensity from an ECR ion source with emphasis on magnetic field induced effects

  20. Development of Emittance Analysis Software for Ion Beam Characterization

    International Nuclear Information System (INIS)

    Padilla, M.J.; Liu, Yuan

    2007-01-01

    Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a figure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally, a high-quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifield Radioactive Ion Beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profiles, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fitting are also incorporated into the software. The software will provide a simplified, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate

  1. DEVELOPMENT OF EMITTANCE ANALYSIS SOFTWARE FOR ION BEAM CHARACTERIZATION

    Energy Technology Data Exchange (ETDEWEB)

    Padilla, M. J.; Liu, Y.

    2007-01-01

    Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a fi gure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally a high quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifi eld Radioactive Ion beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profi les, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fi tting are also incorporated into the software. The software will provide a simplifi ed, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate.

  2. Beam position and total current monitor for heavy ion fusion beams

    International Nuclear Information System (INIS)

    Berners, D.; Reginato, L.L.

    1992-10-01

    Heavy Ion Fusion requires moderate currents, 1-10A, for a duration of about 1 μs. For accurate beam transport, the center of charge must be located to within ± 100 μm. Beam position and intensity may be excited at frequencies approaching 10 MHz, and the monitoring system must have adequate bandwidth to respond at these frequencies. We have modified the Rogowski technique by using distributed reactance multiturn magnetic loops so that it is suitable for measuring current position as well as amplitude. Four identical stripline coils are wound one per quadrant around a non magnetic core. The sensitivity is similar to that of a lumped coil system, with the added advantage of increased bandwidth. The voltages induced on the four separate coils are compared and suitable signal conditioning is performed to recover beam position and intensity information

  3. Prototype ion source for JT-60 neutral beam injectors

    International Nuclear Information System (INIS)

    Akiba, M.

    1981-01-01

    A prototype ion source for JT-60 neutral beam injectors has been fabricated and tested. Here, we review the construction of the prototype ion source and report the experimental results about the source characteristics that has been obtained at this time. The prototype ion source is now installed at the prototype unit of JT-60 neutral beam injection units and the demonstration of the performances of the ion source and the prototype unit has just started

  4. Ballistic-neutralized chamber transport of intense heavy ion beams

    International Nuclear Information System (INIS)

    Rose, D.V.; Welch, D.R.; Oliver, B.V.; Clark, R.E.; Sharp, W.M.; Friedman, A.

    2001-01-01

    Two-dimensional particle-in-cell simulations of intense heavy ion beams propagating in an inertial confinement fusion (ICF) reactor chamber are presented. The ballistic-neutralized transport scheme studied uses 4 GeV Pb +1 ion beams injected into a low-density, gas-filled reactor chamber and the beam is ballistically focused onto an ICF target before entering the chamber. Charge and current neutralization of the beam is provided by the low-density background gas. The ballistic-neutralized simulations include stripping of the beam ions as the beam traverses the chamber as well as ionization of the background plasma. In addition, a series of simulations are presented that explore the charge and current neutralization of the ion beam in an evacuated chamber. For this vacuum transport mode, neutralizing electrons are only drawn from sources near the chamber entrance

  5. Preliminary research results for parameter diagnostics of intense pulsed ion beams

    International Nuclear Information System (INIS)

    Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Li Jingya; Ren Shuqing; Huang Jianjun; Zhang Jiasheng; Peng Jianchang; Ouyang Xiaoping; Zhang Guoguang; Li Hongyu

    2004-01-01

    The preliminary experimental results for parameter diagnostics of intense pulsed ion beams from the FLASH II accelerator were reported. The ion number of an intense pulsed ion beam were experimentally determined by monitoring delayed radioactivity from protons induced nuclear reactions in a 12 C target. The prompt γ-rays and diode Bremsstrahlung X-rays were measured with PIN semi-conductor detector and a ST401 plastic scintillator detector. The Bremsstrahlung distribution outside of the drift tube was detected with a thermoluminescent detector and the shielding design was also determined. The current densities of beam were measured with biased ion collector array. The ion beams were also recorded with a CR-39 detector. (author)

  6. Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers

    Energy Technology Data Exchange (ETDEWEB)

    Grenzer, J.; Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany); Biermanns, A.; Grigorian, S.A.; Pietsch, U. [Institute of Physics, University of Siegen (Germany)

    2009-08-15

    We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60 keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth-resolved X-ray grazing incidence diffraction (GID). Additionally, cross-section TEM investigations were carried out. The ripple-like structures are formed at the sample surface as well as at the buried amorphous-crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the (111) planes. The quality decreases rapidly if the direction of the ion beam deviates from (111). (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  7. Collective ion acceleration by relativistic electron beams in plasmas

    International Nuclear Information System (INIS)

    Galvez, M.; Gisler, G.

    1991-01-01

    A two-dimensional fully electromagnetic particle-in-cell code is used to simulate the interaction of a relativistic electron beam injected into a finite-size background neutral plasma. The simulations show that the background electrons are pushed away from the beam path, forming a neutralizing ion channel. Soon after the beam head leaves the plasma, a virtual cathode forms which travels away with the beam. However, at later times a second, quasi-stationary, virtual cathode forms. Its position and strength depends critically on the parameters of the system which critically determines the efficiency of the ion acceleration process. The background ions trapped in the electrostatic well of the virtual cathode are accelerated and at later times, the ions as well as the virtual cathode drift away from the plasma region. The surfing of the ions in the electrostatic well produces an ion population with energies several times the initial electron beam energy. It is found that optimum ion acceleration occurs when the beam-to-plasma density ratio is near unity. When the plasma is dense, the beam is a weak perturbation and accelerates few ions, while when the plasma is tenuous, the beam is not effectively neutralized, and a virtual cathode occurs right at the injection plane. The simulations also show that, at the virtual cathode position, the electron beam is pinched producing a self-focusing phenomena

  8. Non-invasive monitoring of therapeutic carbon ion beams in a homogeneous phantom by tracking of secondary ions

    Science.gov (United States)

    Gwosch, K.; Hartmann, B.; Jakubek, J.; Granja, C.; Soukup, P.; Jäkel, O.; Martišíková, M.

    2013-06-01

    Radiotherapy with narrow scanned carbon ion beams enables a highly accurate treatment of tumours while sparing the surrounding healthy tissue. Changes in the patient’s geometry can alter the actual ion range in tissue and result in unfavourable changes in the dose distribution. Consequently, it is desired to verify the actual beam delivery within the patient. Real-time and non-invasive measurement methods are preferable. Currently, the only technically feasible method to monitor the delivered dose distribution within the patient is based on tissue activation measurements by means of positron emission tomography (PET). An alternative monitoring method based on tracking of prompt secondary ions leaving a patient irradiated with carbon ion beams has been previously suggested. It is expected to help in overcoming the limitations of the PET-based technique like physiological washout of the beam induced activity, low signal and to allow for real-time measurements. In this paper, measurements of secondary charged particle tracks around a head-sized homogeneous PMMA phantom irradiated with pencil-like carbon ion beams are presented. The investigated energies and beam widths are within the therapeutically used range. The aim of the study is to deduce properties of the primary beam from the distribution of the secondary charged particles. Experiments were performed at the Heidelberg Ion Beam Therapy Center, Germany. The directions of secondary charged particles emerging from the PMMA phantom were measured using an arrangement of two parallel pixelated silicon detectors (Timepix). The distribution of the registered particle tracks was analysed to deduce its dependence on clinically important beam parameters: beam range, width and position. Distinct dependencies of the secondary particle tracks on the properties of the primary carbon ion beam were observed. In the particular experimental set-up used, beam range differences of 1.3 mm were detectable. In addition, variations

  9. Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

    Energy Technology Data Exchange (ETDEWEB)

    Semsang, Nuananong, E-mail: nsemsang@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, LiangDeng [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► Ion beam bombarded rice seeds in vacuum. ► Studied seed survival from the ion bombardment. ► Determined various antioxidant enzyme activities and lipid peroxidation level. ► Discussed vacuum, ion species and ion energy effects. ► Attributed the changes to free radical formation due to ion bombardment. -- Abstract: Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29–60 keV and ion fluences of 1 × 10{sup 16} ions cm{sup −2}. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

  10. Preliminary research results for the generation and diagnostics of high power ion beams on FLASH II accelerator

    International Nuclear Information System (INIS)

    Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Li Jingya; Ren Shuqing; Ouyang Xiaoping; Zhang Guoguang; Li Hongyu

    2004-01-01

    The preliminary experimental results of the generation and diagnostics of high-power ion beams on FLASH II accelerator are reported. The high-power ion beams presently are being produced in a pinched diode. The method for enhancing the ratio of ion to electron current is to increase the electron residing time by pinching the electron flow. Furthermore, electron beam pinching can be combined with electron reflexing to achieve ion beams with even higher efficiency and intensity. The anode plasma is generated by anode foil bombarded with electron and anode foil surface flashover. In recent experiments on FLASH II accelerator, ion beams have been produced with a current of 160 kA and an energy of 500 keV corresponding to an ion beam peak power of about 80 GW. The ion number and current of high power ion beams were determined by monitoring delayed radioactivity from nuclear reactions induced in a 12 C target by the proton beams. The prompt γ-rays and diode Bremsstrahlung X-rays were measured with a PIN semi-conductor detector and a plastic scintillator detector. The current density distribution of ion beam was measured with a biased ion collector array. The ion beams were also recorded with a CR-39 detector. (authors)

  11. An electron cyclotron resonance ion source based low energy ion beam platform

    International Nuclear Information System (INIS)

    Sun, L. T.; Shang, Y.; Ma, B. H.; Zhang, X. Z.; Feng, Y. C.; Li, X. X.; Wang, H.; Guo, X. H.; Song, M. T.; Zhao, H. Y.; Zhang, Z. M.; Zhao, H. W.; Xie, D. Z.

    2008-01-01

    To satisfy the requirements of surface and atomic physics study in the field of low energy multiple charge state ion incident experiments, a low energy (10 eV/q-20 keV/q) ion beam platform is under design at IMP. A simple test bench has been set up to test the ion beam deceleration systems. Considering virtues such as structure simplicity, easy handling, compactness, cost saving, etc., an all-permanent magnet ECRIS LAPECR1 [Lanzhou all-permanent magnet electron cyclotron resonance (ECR) ion source No. 1] working at 14.5 GHz has been adopted to produce intense medium and low charge state ion beams. LAPECR1 source has already been ignited. Some intense low charge state ion beams have been produced on it, but the first test also reveals that many problems are existing on the ion beam transmission line. The ion beam transmission mismatches result in the depressed performance of LAPECR1, which will be discussed in this paper. To obtain ultralow energy ion beam, after being analyzed by a double-focusing analyzer magnet, the selected ion beam will be further decelerated by two afocal deceleration lens systems, which is still under design. This design has taken into consideration both ions slowing down and also ion beam focusing. In this paper, the conceptual design of deceleration system will be discussed

  12. An electron cyclotron resonance ion source based low energy ion beam platform.

    Science.gov (United States)

    Sun, L T; Shang, Y; Ma, B H; Zhang, X Z; Feng, Y C; Li, X X; Wang, H; Guo, X H; Song, M T; Zhao, H Y; Zhang, Z M; Zhao, H W; Xie, D Z

    2008-02-01

    To satisfy the requirements of surface and atomic physics study in the field of low energy multiple charge state ion incident experiments, a low energy (10 eV/q-20 keV/q) ion beam platform is under design at IMP. A simple test bench has been set up to test the ion beam deceleration systems. Considering virtues such as structure simplicity, easy handling, compactness, cost saving, etc., an all-permanent magnet ECRIS LAPECR1 [Lanzhou all-permanent magnet electron cyclotron resonance (ECR) ion source No. 1] working at 14.5 GHz has been adopted to produce intense medium and low charge state ion beams. LAPECR1 source has already been ignited. Some intense low charge state ion beams have been produced on it, but the first test also reveals that many problems are existing on the ion beam transmission line. The ion beam transmission mismatches result in the depressed performance of LAPECR1, which will be discussed in this paper. To obtain ultralow energy ion beam, after being analyzed by a double-focusing analyzer magnet, the selected ion beam will be further decelerated by two afocal deceleration lens systems, which is still under design. This design has taken into consideration both ions slowing down and also ion beam focusing. In this paper, the conceptual design of deceleration system will be discussed.

  13. Air Quality Monitoring with Routine Utilization of Ion Beam Analysis

    International Nuclear Information System (INIS)

    Wegrzynek, D.

    2013-01-01

    Full text: Information on source contributions to ambient air particulate concentrations is a vital tool for air quality management. Traditional gravimetric analysis of airborne particulate matter is unable to provide information on the sources contributing to air particulate concentrations. Ion beam analysis is used to identify the elemental composition of air particulates for source apportionment and determining the relative contribution of biogenic and anthropogenic sources to air particulate pollution. The elemental composition is obtained by proton induced X-ray emission technique (PIXE), which is an ion beam analysis (IBA) technique. The element concentrations are deduced from the X ray spectra produced when the particulate collected on a filter is bombarded with a high-energy proton beam. As part of the UNDP/IAEA/RCA Project RAS/8/082 ‘Better Management of the Environment, Natural Resources and Industrial Growth through Isotope and Radiation Technology,’ a collaborative alliance was formed between the Institute of Geological and Nuclear Sciences Limited and the Wellington Regional Council, New Zeland [1]. The purpose of the project was to examine the elemental composition of air particulate matter and determine the origins through source apportionment techniques. In New Zealand PM 10 and PM 2.5 fractions have been collected at the industrial area of Seaview, Wellington over two years using a GENT stacked filter unit sampler. Concentrations of elements with atomic mass above neon were determined using ion beam analysis and elemental carbon concentrations were determined using a reflectometer. Specific ambient source elemental 'fingerprints' were then determined by factor analysis and the relative contributions of various local and regional sources were assessed. The significant factors (sources) were determined to be sea salt, soil, industry, and combustion sources. Local industry was found to contribute to ambient lead concentrations. (author)

  14. Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

    Science.gov (United States)

    Semsang, Nuananong; Yu, LiangDeng

    2013-07-01

    Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

  15. Optics of ion beams for the neutral beam injection system on HL-2A Tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Zou, G. Q.; Lei, G. J.; Cao, J. Y.; Duan, X. R. [Southwestern Institute of Physics, Chengdu, 610041 (China)

    2012-07-15

    The ion beam optics for the neutral beam injection system on HL-2A Tokomak is studied by two- dimensional numerical simulation program firstly, where the emitting surface is taken at 100 Debye lengths from the plasma electrode. The mathematical formulation, computation techniques are described. Typical ion orbits, equipotential contours, and emittance diagram are shown. For a fixed geometry electrode, the effect of plasma density, plasma potential and plasma electron temperature on ion beam optics is examined, and the calculation reliability is confirmed by experimental results. In order to improve ion beam optics, the application of a small pre-acceleration voltage ({approx}100 V) between the plasma electrode and the arc discharge anode is reasonable, and a lower plasma electron temperature is desired. The results allow optimization of the ion beam optics in the neutral beam injection system on HL-2A Tokomak and provide guidelines for designing future neutral beam injection system on HL-2M Tokomak.

  16. Optics of ion beams for the neutral beam injection system on HL-2A Tokamak.

    Science.gov (United States)

    Zou, G Q; Lei, G J; Cao, J Y; Duan, X R

    2012-07-01

    The ion beam optics for the neutral beam injection system on HL-2A Tokomak is studied by two- dimensional numerical simulation program firstly, where the emitting surface is taken at 100 Debye lengths from the plasma electrode. The mathematical formulation, computation techniques are described. Typical ion orbits, equipotential contours, and emittance diagram are shown. For a fixed geometry electrode, the effect of plasma density, plasma potential and plasma electron temperature on ion beam optics is examined, and the calculation reliability is confirmed by experimental results. In order to improve ion beam optics, the application of a small pre-acceleration voltage (∼100 V) between the plasma electrode and the arc discharge anode is reasonable, and a lower plasma electron temperature is desired. The results allow optimization of the ion beam optics in the neutral beam injection system on HL-2A Tokomak and provide guidelines for designing future neutral beam injection system on HL-2M Tokomak.

  17. PIXE and ion beam analysis in forensics

    International Nuclear Information System (INIS)

    Bailey, Melanie; Warmenhoven, John; Chrislopher, Matt; Kirkby, Karen; Palitsin, Vladimir; Grime, Geoff; Jeynes, Chris; Jones, Brian; Wenn, Roger

    2013-01-01

    Full text: University of Surrey has, for the past four years, collaborated with police institutions from across Europe and the rest of the world lo scope potential applications of ion beam analysis (IBA) in forensic science. In doing this we have consulted practitioners across a range of forensic disciplines, and critically compared IBA with conventional characterisation techniques to investigate the areas in which IBA can add evidential value. In this talk, the results of this feasibility study will be presented, showing the types of sample for which IBA shows considerable promise. We will show how a combination of PIXE with other IBA techniques (EBS, PIGE, MeV-SIMS) can be used to give unprecedented characterisation of forensic samples and comment on the significance of these results for forensic casework. We will also show cases where IBA not appear to add any significant improvement over conventional techniques. (author)

  18. Prototyping of beam position monitor for medium energy beam transport section of RAON heavy ion accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Hyojae, E-mail: lkcom@ibs.re.kr; Jin, Hyunchang; Jang, Ji-Ho; Hong, In-Seok [Rare Isotope Science Project, Institute for Basic Science, Daejeon (Korea, Republic of)

    2016-02-15

    A heavy ion accelerator, RAON is going to be built by Rare Isotope Science Project in Korea. Its target is to accelerate various stable ions such as uranium, proton, and xenon from electron cyclotron resonance ion source and some rare isotopes from isotope separation on-line. The beam shaping, charge selection, and modulation should be applied to the ions from these ion sources because RAON adopts a superconducting linear accelerator structure for beam acceleration. For such treatment, low energy beam transport, radio frequency quadrupole, and medium energy beam transport (MEBT) will be installed in injector part of RAON accelerator. Recently, development of a prototype of stripline beam position monitor (BPM) to measure the position of ion beams in MEBT section is under way. In this presentation, design of stripline, electromagnetic (EM) simulation results, and RF measurement test results obtained from the prototyped BPM will be described.

  19. Beam-plasma discharge in a Kyoto beam-plasma-ion source

    International Nuclear Information System (INIS)

    Ishikawa, J.; Takagi, T.

    1983-01-01

    A beam-plasma type ion source employing an original operating principle has been developed by the present authors. The ion source consists of an ion extraction region with an electron gun, a thin long drift tube as the plasma production chamber, and a primary electron beam collector. An electron beam is effectively utilized for the dual purpose of high density plasma production as a result of beam-plasma discharge, and high current ion beam extraction with ion space-charge compensation. A high density plasma of the order of 10 11 --10 13 cm -3 was produced by virtue of the beam-plasma discharge which was caused by the interaction between a space-charge wave on the electron beam and a high frequency plasma wave. The plasma density then produced was 10 2 --10 3 times the density produced only by collisional ionization by the electron beam. In order to obtain a stable beam-plasma discharge, a secondary electron beam emitted from the electron collector should be utilized. The mechanism of the beam-plasma discharge was analyzed by use of a linear theory in the case of the small thermal energy of the electron beam, and by use of a quasilinear theory in the case of the large thermal energy. High current ion beams of more than 0.1 A were extracted even at a low extraction voltage of 1--5 kV

  20. The emittance of high current heavy ion beams

    International Nuclear Information System (INIS)

    White, N.R.; Devaney, A.S.

    1989-01-01

    Ion implantation is the main application for high current heavy ion beams. Transfer ratio is defined as the ratio of the total ion current leaving the ion source to the current delivered to the endstation. This ratio is monitored and logged and its importance is explained. It is also affected by other factors, such as the isotopic and molecular composition of the total ion beam. The transfer ratio reveals the fraction of ions which are intercepted by parts of the beamline system. The effects of these ions are discussed in two categories: processing purity and reliability. In discussing the emittance of ribbon beams, the two orthogonal planes are usually considered separately. Longitudinal emittance is determined by slot length and by plasma ion temperature. It has already been revealed that the longitudinal divergence of the beams from BF3 is perhaps double that of the beam from arsenic vapour or argon, at the same total perveance from the ion source. This poses the question: why is the ion temperature higher for BF3 than for As or Ar? The transverse emittance is in practical terms dominated by the divergence. It is the most fruitful area for improvement in most real-world systems. There is an intrinsic divergence arising from initial ion energies within the plasma, and there is emittance growth that can occur as a result of aberration in the beam extraction optics. (N.K.)