Ion source for ion beam deposition employing a novel electrode assembly

Science.gov (United States)

Hayes, A. V.; Kanarov, V.; Yevtukhov, R.; Hegde, H.; Druz, B.; Yakovlevitch, D.; Cheesman, W.; Mirkov, V.

2000-02-01

A rf inductively coupled ion source employing a novel electrode assembly for focusing a broad ion beam on a relatively small target area was developed. The primary application of this ion source is the deposition of thin films used in the fabrication of magnetic sensors and optical devices. The ion optics consists of a three-electrode set of multiaperture concave dished grids with a beam extraction diameter of 150 mm. Also described is a variation in the design providing a beam extraction diameter of 120 mm. Grid hole diameters and grid spacing were optimized for low beamlet divergence and low grid impingement currents. The radius of curvature of the grids was optimized to obtain an optimally focused ion beam at the target location. A novel grid fabrication and mounting design was employed which overcomes typical limitations of such grid assemblies, particularly in terms of maintaining optimum beam focusing conditions after multiple cycles of operation. Ion beam generation with argon and xenon gases in energy ranges from 0.3 to 2.0 keV was characterized. For operation with argon gas, beam currents greater than 0.5 A were obtained with a beam energy of 800 eV. At optimal beam formation conditions, beam profiles at distances about equal to the radius of curvature were found to be close to Gaussian, with 99.9% of the beam current located within a 150 mm target diameter. Repeatability of the beam profile over long periods of operation is also reported.

Focused ion beam (FIB) milling of electrically insulating specimens using simultaneous primary electron and ion beam irradiation

International Nuclear Information System (INIS)

Stokes, D J; Vystavel, T; Morrissey, F

2007-01-01

There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials

Development of ion/proton beam equipment for industrial uses

Energy Technology Data Exchange (ETDEWEB)

Choi, Byung Ho; Lee, J. H.; Cho, Y. S.; Joo, P. K.; Kang, S. S.; Song, W. S.; Kim, H. J.; Chang, G. H.; Bang, S. W

1999-12-01

KAERI has possessed design and fabrication technologies of various ion sources including Duoplasmatron and DuoPiGatron developed by R and D projects of the long-term nuclear technology development program. In order to industrialize ion beam equipments utilizing these ion sources, a technology transfer project for a technology transfer project for a domestic firm has been performed. Under this project, engineers of the firm have been trained through classroom lectures of ion beam principles and OJT, an ion/proton beam equipment (DEMO equipment) has been designed, assembled and commissioned jointly with the engineers. Quality of the ion sources has been quantified, and technologies for ion beam equipment construction, functional test and application research have been developed. The DEMO equipment, which consists of an ion source, power supplies, vacuum, cooling and target systems, has been fabricated and tested to secure stability and reliability for industrial uses. Various characteristic tests including high voltage insulation, beam extraction, beam current measuring, etc. have been performed. This DEMO can be utilized for ion sources development as well as ion beam process development for various industrial products. Engineers of the firm have been trained for the industrialization of ion beam equipment and joined in beam application technology development to create industrial needs of beam equipment. (author)

Fabrication of nano-scaled polymer-derived SiAlCN ceramic components using focused ion beam

Science.gov (United States)

Tian, Ye; Shao, Gang; Wang, Xingwei; An, Linan

2013-09-01

Fully dense polymer-derived amorphous silicoaluminum carbonitride (SiAlCN) ceramics were synthesized from polysilazane as preceramic precursors followed by a thermal decomposition process. The nanofabrication of amorphous SiAlCN ceramics was implemented with a focused ion beam (FIB). FIB conditions such as the milling rate, the beam current, and the number of passes were considered. It was found that nanopatterns with a feature size of less than 100 nm could be fabricated onto polymer-derived ceramics (PDCs) precisely and quickly. Specific nanostructures of thin walls, nozzle, and gear have been fabricated as demonstrations, indicating that the FIB technique was a promising method to realize nanostructures on PDCs, especially for microelectromechanical system and micro/nano-sensor applications.

Fabrication of nano-scaled polymer-derived SiAlCN ceramic components using focused ion beam

International Nuclear Information System (INIS)

Tian, Ye; Wang, Xingwei; Shao, Gang; An, Linan

2013-01-01

Fully dense polymer-derived amorphous silicoaluminum carbonitride (SiAlCN) ceramics were synthesized from polysilazane as preceramic precursors followed by a thermal decomposition process. The nanofabrication of amorphous SiAlCN ceramics was implemented with a focused ion beam (FIB). FIB conditions such as the milling rate, the beam current, and the number of passes were considered. It was found that nanopatterns with a feature size of less than 100 nm could be fabricated onto polymer-derived ceramics (PDCs) precisely and quickly. Specific nanostructures of thin walls, nozzle, and gear have been fabricated as demonstrations, indicating that the FIB technique was a promising method to realize nanostructures on PDCs, especially for microelectromechanical system and micro/nano-sensor applications. (paper)

The fabrication of metal silicide nanodot arrays using localized ion implantation

International Nuclear Information System (INIS)

Han, Jin; Kim, Tae-Gon; Min, Byung-Kwon; Lee, Sang Jo

2010-01-01

We propose a process for fabricating nanodot arrays with a pitch size of less than 25 nm. The process consists of localized ion implantation in a metal thin film on a Si wafer using a focused ion beam (FIB), followed by chemical etching. This process utilizes the etching resistivity changes of the ion beam irradiated region that result from metal silicide formation by ion implantation. To control the nanodot diameter, a threshold ion dose model is proposed using the Gaussian distribution of the ion beam intensities. The process is verified by fabricating nanodots with various diameters. The mechanism of etching resistivity is investigated via x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).

Applications of focused ion beams in microelectronics

International Nuclear Information System (INIS)

Broughton, C.; Beale, M.I.J.; Deshmukh, V.G.I.

1986-04-01

We present the conclusions of the RSRE programme on the application of focused ion beams in microelectronics and review the literature published in this field. We discuss the design and performance of focused beam implanters and the viability of their application to semiconductor device fabrication. Applications in the areas of lithography, direct implantation and micromachining are discussed in detail. Comparisons are made between the use of focused ion beams and existing techniques for these fabrication processes with a strong emphasis placed on the relative throughputs. We present results on a novel spot size measurement technique and the effect of beam heating on resist. We also present the results of studies into implantation passivation of resist to oxygen plasma attack as basis for a dry development lithography scheme. A novel lithography system employing flood electron exposure from a photocathode which is patterned by a focused ion beam which can also be used to repair mask defects is considered. (author)

Abaca/polyester nonwoven fabric functionalization for metal ion adsorbent synthesis via electron beam-induced emulsion grafting

International Nuclear Information System (INIS)

Madrid, Jordan F.; Ueki, Yuji; Seko, Noriaki

2013-01-01

A metal ion adsorbent was developed from a nonwoven fabric trunk material composed of both natural and synthetic polymers. A pre-irradiation technique was used for emulsion grafting of glycidyl methacrylate (GMA) onto an electron beam irradiated abaca/polyester nonwoven fabric (APNWF). The dependence of degree of grafting (Dg), calculated from the weight of APNWF before and after grafting, on absorbed dose, reaction time and monomer concentration were evaluated. After 50 kGy irradiation with 2 MeV electron beam and subsequent 3 h reaction with an emulsion consisting of 5% GMA and 0.5% polyoxyethylene sorbitan monolaurate (Tween 20) surfactant in deionized water at 40 °C, a grafted APNWF with a Dg greater than 150% was obtained. The GMA-grafted APNWF was further modified by reaction with ethylenediamine (EDA) in isopropyl alcohol at 60 °C to introduce amine functional groups. After a 3 h reaction with 50% EDA, an amine group density of 2.7 mmole/gram adsorbent was achieved based from elemental analysis. Batch adsorption experiments were performed using Cu 2+ and Ni 2+ ions in aqueous solutions with initial pH of 5 at 30 °C. Results show that the adsorption capacity of the grafted adsorbent for Cu 2+ is four times higher than Ni 2+ ions. - Highlights: • An amine type adsorbent from abaca/polyester nonwoven fabric was synthesized. • Pre-irradiation method was used in grafting glycidyl methacrylate on nonwoven fabric. • Radiation-induced grafting was performed with monomer in emulsion state. • The calculated adsorption capacity for Cu 2+ is four times higher than Ni 2+ ions. • Grafted adsorbent can remove Cu 2+ faster than a chemically similar commercial resin

Application of focused ion beam for the fabrication of AFM probes

Science.gov (United States)

Kolomiytsev, A. S.; Lisitsyn, S. A.; Smirnov, V. A.; Fedotov, A. A.; Varzarev, Yu N.

2017-10-01

The results of an experimental study of the probe tips fabrication for critical-dimension atomic force microscopy (CD-AFM) using the focused ion beam (FIB) induced deposition are presented. Methods of the FIB-induced deposition of tungsten and carbon onto the tip of an AFM probe are studied. Based on the results obtained in the study, probes for the CD-AFM technique with a tip height about 1 μm and radius of 20 nm were created. The formation of CD-AFM probes by FIB-induced deposition allows creating a high efficiency tool for nanotechnology and nanodiagnostics. The use of modified cantilevers allows minimizing the artefacts of AFM images and increasing the accuracy of the relief measurement. The obtained results can be used for fabrication of AFM probes for express monitoring of the technological process in the manufacturing of the elements for micro- and nanoelectronics.

Development of a focused ion beam micromachining system

Energy Technology Data Exchange (ETDEWEB)

Pellerin, J.G.; Griffis, D.; Russell, P.E.

1988-12-01

Focused ion beams are currently being investigated for many submicron fabrication and analytical purposes. An FIB micromachining system consisting of a UHV vacuum system, a liquid metal ion gun, and a control and data acquisition computer has been constructed. This system is being used to develop nanofabrication and nanomachining techniques involving focused ion beams and scanning tunneling microscopes.

Abaca/polyester nonwoven fabric functionalization for metal ion adsorbent synthesis via electron beam-induced emulsion grafting

Science.gov (United States)

Madrid, Jordan F.; Ueki, Yuji; Seko, Noriaki

2013-09-01

A metal ion adsorbent was developed from a nonwoven fabric trunk material composed of both natural and synthetic polymers. A pre-irradiation technique was used for emulsion grafting of glycidyl methacrylate (GMA) onto an electron beam irradiated abaca/polyester nonwoven fabric (APNWF). The dependence of degree of grafting (Dg), calculated from the weight of APNWF before and after grafting, on absorbed dose, reaction time and monomer concentration were evaluated. After 50 kGy irradiation with 2 MeV electron beam and subsequent 3 h reaction with an emulsion consisting of 5% GMA and 0.5% polyoxyethylene sorbitan monolaurate (Tween 20) surfactant in deionized water at 40 °C, a grafted APNWF with a Dg greater than 150% was obtained. The GMA-grafted APNWF was further modified by reaction with ethylenediamine (EDA) in isopropyl alcohol at 60 °C to introduce amine functional groups. After a 3 h reaction with 50% EDA, an amine group density of 2.7 mmole/gram adsorbent was achieved based from elemental analysis. Batch adsorption experiments were performed using Cu2+ and Ni2+ ions in aqueous solutions with initial pH of 5 at 30 °C. Results show that the adsorption capacity of the grafted adsorbent for Cu2+ is four times higher than Ni2+ ions.

Maskless, resistless ion beam lithography

International Nuclear Information System (INIS)

Ji, Qing

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O 2 + , BF 2 + , P + etc., for surface modification and doping applications. With optimized source condition, around 85% of BF 2 + , over 90% of O 2 + and P + have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He + beam is as high as 440 A/cm 2 · Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O 2 + ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O 2 + ions with the dose of 10 15 cm -2 . The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P

Fabrication of the polarization independent spectral beam combining grating

Science.gov (United States)

Liu, Quan; Jin, Yunxia; Wu, Jianhong; Guo, Peiliang

2016-03-01

Owing to damage, thermal issues, and nonlinear optical effects, the output power of fiber laser has been proven to be limited. Beam combining techniques are the attractive solutions to achieve high-power high-brightness fiber laser output. The spectral beam combining (SBC) is a promising method to achieve high average power output without influencing the beam quality. A polarization independent spectral beam combining grating is one of the key elements in the SBC. In this paper the diffraction efficiency of the grating is investigated by rigorous coupled-wave analysis (RCWA). The theoretical -1st order diffraction efficiency of the grating is more than 95% from 1010nm to 1080nm for both TE and TM polarizations. The fabrication tolerance is analyzed. The polarization independent spectral beam combining grating with the period of 1.04μm has been fabricated by holographic lithography - ion beam etching, which are within the fabrication tolerance.

Maskless, resistless ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Ji, Qing [Univ. of California, Berkeley, CA (United States)

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O₂⁺, BF₂⁺, P⁺ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF₂⁺, over 90% of O₂⁺ and P⁺ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He⁺ beam is as high as 440 A/cm² • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O₂⁺ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O₂⁺ ions with the dose of 10¹⁵ cm^-2. The oxide can then serve as a hard mask for patterning of the Si film. The

Developments in broad-beam, ion-source technology and applications

International Nuclear Information System (INIS)

Kaufman, H.R.; Harper, J.M.E.; Cuomo, J.J.

1982-01-01

Recent advances in broad-beam, ion-source technology are summarized, including low-energy ion optics, improved extraction grid fabrication, a compact ion-source design and a gridless ion-source design. Recent applications have emphasized concepts such as stress modification of vapor deposited films, very low energy ion beams to minimize the physical sputtering portion in reactive etching, and the use of multiple sources and targets to sputter deposit alloys and compounds. A comprehensive critical review by the same authors appears concurrently, describing in detail the developments in broad-beam, ion-source technology 1 and the applications of these sources. 2

Optical fiber plasmonic lens for near-field focusing fabricated through focused ion beam

Science.gov (United States)

Sloyan, Karen; Melkonyan, Henrik; Moreira, Paulo; Dahlem, Marcus S.

2017-02-01

We report on numerical simulations and fabrication of an optical fiber plasmonic lens for near-field focusing applications. The plasmonic lens consists of an Archimedean spiral structure etched through a 100 nm-thick Au layer on the tip of a single-mode SM600 optical fiber operating at a wavelength of 632:8 nm. Three-dimensional finite-difference time-domain computations show that the relative electric field intensity of the focused spot increases 2:1 times when the number of turns increases from 2 to 12. Furthermore, a reduction of the intensity is observed when the initial inner radius is increased. The optimized plasmonic lens focuses light into a spot with a full-width at half-maximum of 182 nm, beyond the diffraction limit. The lens was fabricated by focused ion beam milling, with a 200nm slit width.

Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching

International Nuclear Information System (INIS)

Liu Zhengjun; Iltanen, Kari; Chekurov, Nikolai; Tittonen, Ilkka; Grigoras, Kestutis

2013-01-01

A novel aluminum oxide (Al 2 O 3 ) hard mask fabrication process with nanoscale resolution is introduced. The Al 2 O 3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al 2 O 3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching. Gallium (Ga + ) FIB maskless patterning confers wet etch selectivity between the irradiated region and the non-irradiated one on the Al 2 O 3 layer, and mask patterns can easily be revealed by wet etching. This method is a modification of Ga + FIB mask patterning for the silicon etch stop, which eliminates the detrimental lattice damage and doping of the silicon substrate in critical devices. The shallow surface gallium FIB irradiated Al 2 O 3 mask protects the underlying silicon from Ga + ions. The performance of the masking capacity was tested by drawing pairs consisting of a line and an empty space with varying width. The best result was seven such pairs for 1 μm. The smallest half pitch was 59 nm. This method is capable of arbitrary pattern generation. The fabrication of a freestanding single-ended tuning fork resonator utilizing the introduced masking method is demonstrated. (paper)

Broad and focused ion beams Ga+ implantation damage in the fabrication of p+-n Si shallow junctions

International Nuclear Information System (INIS)

Steckl, A.J.; Lin, C.M.; Patrizio, D.; Rai, A.K.; Pronko, P.P.

1989-01-01

The use of focused and broad beam Ga + implantation for the fabrication of p + -n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900 degree C anneal. 6 refs., 5 figs., 1 tab

Magnetoresistive nanojunctions fabricated via focused ion beam implantation

Energy Technology Data Exchange (ETDEWEB)

Stefanescu, E.; Hong, J.; Guduru, R. [Florida International University (United States); Lavrenov, A. [Hitachi Research (United States); Litvinov, D. [University of Houston, Center for Nanomagnetic Systems (United States); Khizroev, S., E-mail: khizroev@fiu.edu [Florida International University (United States)

2013-01-15

Focused ion beam (FIB) is used to implant Ga{sup +} ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 Micro-Sign m to {approx}80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of {approx}10{sup 3} ions/cm{sup 2} at a 1-pA FIB current is sufficient to fully 'de-activate' magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.

Mechanical design and fabrication of the transverse field focusing (TFF) matching/pumping section for negative ion based neutral beam systems

International Nuclear Information System (INIS)

Purgalis, P.; Anderson, O.A.; Koehler, G.W.; Maruyama, Y.; Matuk, C.A.; Owren, H.M.; Paterson, J.A.; Wandesforde, A.H.

1985-11-01

A negative ion based neutral beam injection system is under development as proof-of-principle demonstration of a radiation-hardened beamline. The beamline consists of a source, a pre-accelerator, a matching/pumping (M/P) section, and an accelerator. The function of the M/P section is to provide vacuum pumping, to remove electrons, to provide beam edge confinement, to compress the beam thickness to match the requirements of the accelerator, and to transport the 1A, 80 keV, 25 cm high H - ribbon beam to the accelerator entrance. Details of the design and fabrication of the M/P section are presented. The M/P section has eight separate, high voltage electrodes forming an ''S'' shaped beam path. Electrons are removed by the electron trap in this path. Beam edge confinement and thickness compression is accomplished by the curvature and face contour of the electrodes. Design heat loads are described. Electrode fabrication is discussed, and the cryopumps used are described

Ion sources for initial use at the Holifield radioactive ion beam facility

International Nuclear Information System (INIS)

Alton, G.D.

1994-01-01

The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the HRIBF because of its low emittance, relatively high ionization efficiencies and species versatility, and because it has been engineered for remote installation, removal and servicing as required for safe handling in a high-radiation-level ISOL facility. Prototype plasma-sputter negative ion sources and negative surfaceionization sources are also under design consideration for generating negative radioactive ion beams from high electron-affinity elements. A brief review of the HRIBF will be presented, followed by a detailed description of the design features, operational characteristics, ionization efficiencies, and beam qualities (emittances) of these sources

Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

International Nuclear Information System (INIS)

Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

1993-01-01

Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

Prototype ion source for JT-60 neutral beam injectors

International Nuclear Information System (INIS)

Akiba, M.

1981-01-01

A prototype ion source for JT-60 neutral beam injectors has been fabricated and tested. Here, we review the construction of the prototype ion source and report the experimental results about the source characteristics that has been obtained at this time. The prototype ion source is now installed at the prototype unit of JT-60 neutral beam injection units and the demonstration of the performances of the ion source and the prototype unit has just started

Image-projection ion-beam lithography

International Nuclear Information System (INIS)

Miller, P.A.

1989-01-01

Image-projection ion-beam lithography is an attractive alternative for submicron patterning because it may provide high throughput; it uses demagnification to gain advantages in reticle fabrication, inspection, and lifetime; and it enjoys the precise deposition characteristics of ions which cause essentially no collateral damage. This lithographic option involves extracting low-mass ions (e.g., He + ) from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto a resist-coated wafer. While the advantages of this technology have been demonstrated experimentally by the work of IMS (Austria), many difficulties still impede extension of the technology to the high-volume production of microelectronic devices. We report a computational study of a lithography system designed to address problem areas in field size, telecentricity, and chromatic and geometric aberration. We present a novel ion-column-design approach and conceptual ion-source and column designs which address these issues. We find that image-projection ion-beam technology should in principle meet high-volume-production requirements. The technical success of our present relatively compact-column design requires that a glow-discharge-based ion source (or equivalent cold source) be developed and that moderate further improvement in geometric aberration levels be obtained. Our system requires that image predistortion be employed during reticle fabrication to overcome distortion due to residual image nonlinearity and space-charge forces. This constitutes a software data preparation step, as do correcting for distortions in electron lithography columns and performing proximity-effect corrections. Areas needing further fundamental work are identified

Plasma ion sources and ion beam technology in microfabrications

International Nuclear Information System (INIS)

Ji, Lili

2007-01-01

For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area. As the dimensions of IC devices are scaled down, it has shown the need for new ion beam tools and new approaches to the fabrication of small-scale devices. In the meanwhile, nanotechnology has also deeply involved in material science research and bioresearch in recent years. The conventional FIB systems which utilize liquid gallium ion sources to achieve nanometer scale resolution can no longer meet the various requirements raised from such a wide application area such as low contamination, high throughput and so on. The drive towards controlling materials properties at nanometer length scales relies on the availability of efficient tools. In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications. An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification. This new instrument employs a mini-RF driven plasma source to generate focused ion beam with various ion species, a FEI two-lens electron (2LE) column for SEM imaging, and a five-axis manipulator system for sample positioning. An all-electrostatic two-lens column has been designed to focus the ion beam extracted from the source. Based on the Munro ion optics simulation, beam spot sizes as small as 100 nm can be achieved at beam energies between 5 to 35 keV if a 5 (micro)m-diameter extraction aperture is used. Smaller beam spot sizes can be obtained with smaller apertures at sacrifice of some beam current. The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance

Photonic guiding structures in lithium niobate crystals produced by energetic ion beams

Science.gov (United States)

Chen, Feng

2009-10-01

A range of ion beam techniques have been used to fabricate a variety of photonic guiding structures in the well-known lithium niobate (LiNbO3 or LN) crystals that are of great importance in integrated photonics/optics. This paper reviews the up-to-date research progress of ion-beam-processed LiNbO3 photonic structures and reports on their fabrication, characterization, and applications. Ion beams are being used with this material in a wide range of techniques, as exemplified by the following examples. Ion beam milling/etching can remove the selected surface regions of LiNbO3 crystals via the sputtering effects. Ion implantation and swift ion irradiation can form optical waveguide structures by modifying the surface refractive indices of the LiNbO3 wafers. Crystal ion slicing has been used to obtain bulk-quality LiNbO3 single-crystalline thin films or membranes by exfoliating the implanted layer from the original substrate. Focused ion beams can either generate small structures of micron or submicron dimensions, to realize photonic bandgap crystals in LiNbO3, or directly write surface waveguides or other guiding devices in the crystal. Ion beam-enhanced etching has been extensively applied for micro- or nanostructuring of LiNbO3 surfaces. Methods developed to fabricate a range of photonic guiding structures in LiNbO3 are introduced. Modifications of LiNbO3 through the use of various energetic ion beams, including changes in refractive index and properties related to the photonic guiding structures as well as to the materials (i.e., electro-optic, nonlinear optic, luminescent, and photorefractive features), are overviewed in detail. The application of these LiNbO3 photonic guiding structures in both micro- and nanophotonics are briefly summarized.

A one-dimensional ion beam figuring system for x-ray mirror fabrication

International Nuclear Information System (INIS)

Idir, Mourad; Huang, Lei; Bouet, Nathalie; Kaznatcheev, Konstantine; Vescovi, Matthew; Lauer, Ken; Conley, Ray; Rennie, Kent; Kahn, Jim; Nethery, Richard; Zhou, Lin

2015-01-01

We report on the development of a one-dimensional Ion Beam Figuring (IBF) system for x-ray mirror polishing. Ion beam figuring provides a highly deterministic method for the final precision figuring of optical components with advantages over conventional methods. The system is based on a state of the art sputtering deposition system outfitted with a gridded radio frequency inductive coupled plasma ion beam source equipped with ion optics and dedicated slit developed specifically for this application. The production of an IBF system able to produce an elongated removal function rather than circular is presented in this paper, where we describe in detail the technical aspect and present the first obtained results

A one-dimensional ion beam figuring system for x-ray mirror fabrication

Energy Technology Data Exchange (ETDEWEB)

Idir, Mourad, E-mail: midir@bnl.gov; Huang, Lei; Bouet, Nathalie; Kaznatcheev, Konstantine; Vescovi, Matthew; Lauer, Ken [NSLS-II, Brookhaven National Laboratory, P.O. Box 5000, Upton, New York 11973 (United States); Conley, Ray [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Rennie, Kent; Kahn, Jim; Nethery, Richard [Kaufman & Robinson, Inc., 1330 Blue Spruce Drive, Fort Collins, Colorado 80524 (United States); Zhou, Lin [College of Mechatronics and Automation, National University of Defense Technology, 109 Deya Road, Changsha, Hunan 410073 (China); Hu’nan Key Laboratory of Ultra-precision Machining Technology, Changsha, Hunan 410073 (China)

2015-10-15

We report on the development of a one-dimensional Ion Beam Figuring (IBF) system for x-ray mirror polishing. Ion beam figuring provides a highly deterministic method for the final precision figuring of optical components with advantages over conventional methods. The system is based on a state of the art sputtering deposition system outfitted with a gridded radio frequency inductive coupled plasma ion beam source equipped with ion optics and dedicated slit developed specifically for this application. The production of an IBF system able to produce an elongated removal function rather than circular is presented in this paper, where we describe in detail the technical aspect and present the first obtained results.

Performance test results of ion beam transport for SST-1 neutral beam injector

Energy Technology Data Exchange (ETDEWEB)

Jana, M R; Mattoo, S K [Institute for Plasma Research Bhat, Gandhinagar-382428, Gujarat (India); Uhlemann, R, E-mail: mukti@ipr.res.i [Forschungszentrum Juelich, Institute fur Energieforschung IEF-4, Plasmaphysik D-52425 Juelich (Germany)

2010-02-01

A neutral beam injector is built at IPR to heat the plasma of SST-1 and its upgrade. It delivers a maximum beam power of 1.7 MW for 55 kV Hydrogen beam or 80 kV Deuterium beam. At lower beam voltage, the delivered power falls to 500 kW at 30 kV Hydrogen beam which is adequate to heat SST-1 plasma ions to {approx} 1 keV. Process of acceleration of ions to the required beam voltage, conversion of ions to neutrals and removal of un-neutralized ions and the beam diagnostic systems occupy a large space. The consequence is that linear extent of the neutral beam injector is at least a few meters. Also, port access provides a very narrow duct. Even a very good injector design and fabrication practices keep beam divergence at a very low but finite value. The result is beam transport becomes an important issue. Since a wide area beam is constructed by hundreds of beam lets, it becomes essential they be focused in such a way that beam transport loss is minimized. Horizontal and vertical focal lengths are two parameters, in addition to beam divergence, which give a description of the beam transport. We have obtained these two parameters for our injector by using beam transport code; making several hundred simulation runs by varying optical parameters of the beam. The selected parameters set has been translated into the engineering features of the extractor grid set of the ion source. Aperture displacement technique is used to secure the horizontal beam focusing at 5.4 m. Combination of both aperture displacement and inclining of two grid halves to {approx} 17 mrad are secured for vertical beam focusing at 7 m from earth grid of the ion source. The gaps between the design, engineered and performance tested values usually arise due to lack of exercising control over fabrication processes or due to inaccuracies in the assumption made in the model calculations of beam optics and beam transport. This has been the case with several injectors, notably with JET injector. To overcome

The fabrication and high temperature stability of biaxially textured Ni tape by ion beam structure modification method

International Nuclear Information System (INIS)

Wu, K.; Wang, S.S.; Meng, J.; Han, Z.

2004-01-01

For the conventional rolling assisted biaxially textured metallic substrate (RABiTS) process, a large degree of cold rolling deformation and a subsequent high temperature annealing procedure are required to obtain adequately biaxially textured Ni tape. Recently, we have reported a newly developed process, named as ion beam structure modification (ISM), for fabricating biaxially textured Ni tape by use of low energy argon ion beam bombardment. In this paper, the biaxial texture of ISM processed Ni tape and its thermal stability at high temperatures are investigated. Results show that Ni tape processed under optimum ISM conditions, the (2 0 0) rocking curve FWHM is less than 5.7 deg. , and the (1 1 1) phi-scan FWHM is less than 7.5 deg. . High temperature annealing does not impair the biaxial-texture already developed in ISM processed Ni foils, although ISMs should not be regarded as a complete equilibrium process

The role of ion beam etching in magnetic bubble device manufacture

International Nuclear Information System (INIS)

Brambley, D.R.; Vanner, K.C.

1979-01-01

The most critical stage of fabrication of magnetic bubble memories is the etching of a pattern in a permalloy (80/20 Ni/Fe) film approximately 0.4 microns thick. The permalloy elements so made are used to produce perturbations in an externally applied magnetic bias field, and these perturbations cause the translation of magnetic bubbles within an underlying film. Devices now being produced have memory-cell sizes of less than 16 microns and require the etched features to have minimum dimensions of less than 2 microns. The only practicable way of achieving this with the requisite precision is by the use of sputter or ion beam etching. In addition, ion beam etching is used for defining gold conductor elements which perform the functions of bubble nucleation, replication and transfer. This paper briefly outlines the bubble device fabrication process, with special emphasis on the role of ion beam etching. The wafer temperature, element profile and uniformity obtained during ion beam etching are of considerable significance, and some of the factors affecting these will be discussed. Finally some of the limitations of ion beam etching will be described. (author)

Fabrication of optical channel waveguides in crystals and glasses using macro- and micro ion beams

Energy Technology Data Exchange (ETDEWEB)

Bányász, I., E-mail: banyasz@sunserv.kfki.hu [Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Rajta, I.; Nagy, G.U.L. [MTA Atomki, Institute for Nuclear Research, Hungarian Academy of Sciences, P.O. Box 51, H-4001 Debrecen (Hungary); Zolnai, Z. [Research Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Havranek, V. [Nuclear Physics Institute AV CR, Řež near Prague 250 68 (Czech Republic); Pelli, S. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino, FI (Italy); “Enrico Fermi” Center for Study and Research, Piazza del Viminale 2, 00184 Roma (Italy); Veres, M. [Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Berneschi, S.; Nunzi-Conti, G. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino, FI (Italy); Righini, G.C. [“Enrico Fermi” Center for Study and Research, Piazza del Viminale 2, 00184 Roma (Italy)

2014-07-15

Active and passive optical waveguides are fundamental elements in modern telecommunications systems. A great number of optical crystals and glasses were identified and are used as good optoelectronic materials. However, fabrication of waveguides in some of those materials remains still a challenging task due to their susceptibility to mechanical or chemical damages during processing. Researches were initiated on ion beam fabrication of optical waveguides in tellurite glasses. Channel waveguides were written in Er:TeO{sub 2}–WO{sub 3} glass through a special silicon mask using 1.5 MeV N{sup +} irradiation. This method was improved by increasing N{sup +} energy to 3.5 MeV to achieve confinement at the 1550 nm wavelength, too. An alternative method, direct writing of the channel waveguides in the tellurite glass using focussed beams of 6–11 MeV C{sup 3+} and C{sup 5+} and 5 MeV N{sup 3+}, has also been developed. Channel waveguides were fabricated in undoped eulytine-(Bi{sub 4}Ge{sub 3}O{sub 12}) and sillenite type (Bi{sub 12}GeO{sub 20}) bismuth germanate crystals using both a special silicon mask and a thick SU8 photoresist mask and 3.5 MeV N{sup +} irradiation. The waveguides were studied by phase contrast and interference microscopy and micro Raman spectroscopy. Guiding properties were checked by the end fire method.

Fabrication of nano structures in thin membranes with focused ion beam technology

NARCIS (Netherlands)

Gadgil, V.J.; Tong, D.H.; Cesa, Y.; Bennink, Martin L.

2009-01-01

In recent years, Focused Ion Beam (FIB) technology has emerged as an important tool for nanotechnology [V.J. Gadgil, F. Morrissey, Encyclopaedia of Nanoscience and Nanotechnology, vol. 1, American Science Publishers, ISBN: 1-58883-057-8, 2004, p101.]. In this paper, applications of focused ion beam

Microfabricated Ion Beam Drivers for Magnetized Target Fusion

Science.gov (United States)

Persaud, Arun; Seidl, Peter; Ji, Qing; Ardanuc, Serhan; Miller, Joseph; Lal, Amit; Schenkel, Thomas

2015-11-01

Efficient, low-cost drivers are important for Magnetized Target Fusion (MTF). Ion beams offer a high degree of control to deliver the required mega joules of driver energy for MTF and they can be matched to several types of magnetized fuel targets, including compact toroids and solid targets. We describe an ion beam driver approach based on the MEQALAC concept (Multiple Electrostatic Quadrupole Array Linear Accelerator) with many beamlets in an array of micro-fabricated channels. The channels consist of a lattice of electrostatic quadrupoles (ESQ) for focusing and of radio-frequency (RF) electrodes for ion acceleration. Simulations with particle-in-cell and beam envelope codes predict >10x higher current densities compared to state-of-the-art ion accelerators. This increase results from dividing the total ion beam current up into many beamlets to control space charge forces. Focusing elements can be biased taking advantage of high breakdown electric fields in sub-mm structures formed using MEMS techniques (Micro-Electro-Mechanical Systems). We will present results on ion beam transport and acceleration in MEMS based beamlets. Acknowledgments: This work is supported by the U.S. DOE under Contract No. DE-AC02-05CH11231.

Ion beam modification of polymers

International Nuclear Information System (INIS)

Sofield, C.J.; Sugden, S.; Ing, J.; Bridwell, L.B.; Wang, Y.Q.

1993-01-01

The implantation of polymers has received considerable attention in recent years, primarily to examine doping of conducting polymers and to increase the surface conductivity (by many orders of magnitude) of highly insulating polymers. The interest in these studies was partly motivated by possible applications to microelectronic device fabrication. More recently it has been observed that ion implantation can under some conditions lead to the formation of a hard (e.g. as hard as steel, ca. 3 MPa) and conducting surface layer. This paper will review the ion beam modification of polymers resulting from ion implantation with reference to fundamental ion-solid interactions. This leads us to examine whether or not implantation of polymers is a contradiction in terms. (Author)

Development of a negative ion-based neutral beam injector in Novosibirsk.

Science.gov (United States)

Ivanov, A A; Abdrashitov, G F; Anashin, V V; Belchenko, Yu I; Burdakov, A V; Davydenko, V I; Deichuli, P P; Dimov, G I; Dranichnikov, A N; Kapitonov, V A; Kolmogorov, V V; Kondakov, A A; Sanin, A L; Shikhovtsev, I V; Stupishin, N V; Sorokin, A V; Popov, S S; Tiunov, M A; Belov, V P; Gorbovsky, A I; Kobets, V V; Binderbauer, M; Putvinski, S; Smirnov, A; Sevier, L

2014-02-01

A 1000 keV, 5 MW, 1000 s neutral beam injector based on negative ions is being developed in the Budker Institute of Nuclear Physics, Novosibirsk in collaboration with Tri Alpha Energy, Inc. The innovative design of the injector features the spatially separated ion source and an electrostatic accelerator. Plasma or photon neutralizer and energy recuperation of the remaining ion species is employed in the injector to provide an overall energy efficiency of the system as high as 80%. A test stand for the beam acceleration is now under construction. A prototype of the negative ion beam source has been fabricated and installed at the test stand. The prototype ion source is designed to produce 120 keV, 1.5 A beam.

Ion-beam plasma and propagation of intense compensated ion beams

Energy Technology Data Exchange (ETDEWEB)

Gabovich, M D [AN Ukrainskoj SSR, Kiev. Inst. Fiziki

1977-02-01

Discussed are the results of investigation of plasma properties received by neutralization of intense ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown that not only dynamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account in solving the problem of obtaining ''superdense'' compensated beams.

Ion-beam plasma and propagation of intense compensated ion beams

International Nuclear Information System (INIS)

Gabovich, M.D.

1977-01-01

Discussed are the results of investigation of plasma properties recieved by neutralization of intensive ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown, that not only dinamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account at solving the problem of obtaining ''superdense'' compensated beams

Means for obtaining a metal ion beam from a heavy-ion cyclotron source

Science.gov (United States)

Hudson, E.D.; Mallory, M.L.

1975-08-01

A description is given of a modification to a cyclotron ion source used in producing a high intensity metal ion beam. A small amount of an inert support gas maintains the usual plasma arc, except that it is necessary for the support gas to have a heavy mass, e.g., xenon or krypton as opposed to neon. A plate, fabricated from the metal (or anything that can be sputtered) to be ionized, is mounted on the back wall of the ion source arc chamber and is bombarded by returning energetic low-charged gas ions that fail to cross the initial accelerating gap between the ion source and the accelerating electrode. Some of the atoms that are dislodged from the plate by the returning gas ions become ionized and are extracted as a useful beam of heavy ions. (auth)

Ion beam monitoring

International Nuclear Information System (INIS)

McKinney, C.R.

1980-01-01

An ion beam analyzer is specified, having an ion source for generating ions of a sample to be analyzed, means for extracting the sample ions, means for focusing the sample ions into a beam, separation means positioned along the ion beam for selectively deflecting species of ions, and means for detecting the selected species of ions. According to the specification, the analyzer further comprises (a) means for disabling at least a portion of the separation means, such that the ion beam from the source remains undeflected; (b) means located along the path of the undeflected ion beam for sensing the sample ions; and (c) enabling means responsive to the sensing means for automatically re-enabling the separation means when the sample ions reach a predetermined intensity level. (author)

Heavy ion beam micromachining on LiNbO3

International Nuclear Information System (INIS)

Nesprias, F.; Venturino, M.; Debray, M.E.; Davidson, J.; Davidson, M.; Kreiner, A.J.; Minsky, D.; Fischer, M.; Lamagna, A.

2009-01-01

In this work 3D micromachining of x-cut lithium niobate crystals was performed using the high energy heavy ion microbeam (HIM) at the Tandar Laboratory, Buenos Aires. The samples were machined using 35 Cl beams at 70 MeV bombarding energy combined with wet etching with hydrofluoric acid solutions at room temperature. As the ion beam penetrates the sample, it induces lattice damage increasing dramatically the local etching rate of the material. This technique was applied to the fabrication of 3D waveguides with long control electrodes. The resulting structures indicate that well defined contours with nearly vertical sidewalls can be made. The results also show that with fluences of only 5 x 10 12 ions/cm 2 , this technique is suitable for the fabrication of different shapes of LiNbO 3 control-waveguides that can be used in different optical devices and matched with the existing optical fibers.

Atomistic modeling of ion beam induced amorphization in silicon

International Nuclear Information System (INIS)

Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria; Barbolla, Juan

2005-01-01

Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work, we briefly describe the existing phenomenological and defect-based amorphization models. We focus on the atomistic model we have developed to describe ion beam induced amorphization in Si. In our model, the building block for the amorphous phase is the bond defect or IV pair, whose stability increases with the number of surrounding IV pairs. This feature explains the regrowth behavior of different damage topologies and the kinetics of the crystalline to amorphous transition. The model provides excellent quantitative agreement with experimental results

Selection and design of ion sources for use at the Holifield radioactive ion beam facility

International Nuclear Information System (INIS)

Alton, G.D.; Haynes, D.L.; Mills, G.D.; Olsen, D.K.

1994-01-01

The Holifield Radioactive Ion Beam Facility now under construction at the Oak Ridge National Laboratory will use the 25 MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility. The choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. Although direct-extraction negative ion sources are clearly desirable, the ion formation efficiencies are often too low for practical consideration; for this situation, positive ion sources, in combination with charge exchange, are the logical choice. The high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the facility because of its low emittance, relatively high ionization efficiencies, and species versatility, and because it has been engineered for remote installation, removal, and servicing as required for safe handling in a high-radiation-level ISOL facility. The source will be primarily used to generate ion beams from elements with intermediate to low electron affinities. Prototype plasma-sputter negative ion sources and negative surface-ionization sources are under design consideration for generating radioactive ion beams from high-electron-affinity elements. The design features of these sources and expected efficiencies and beam qualities (emittances) will be described in this report

Focused ion beam technology

International Nuclear Information System (INIS)

Gamo, K.

1993-01-01

Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author)

Biased Target Ion Beam Deposition and Nanoskiving for Fabricating NiTi Alloy Nanowires

Science.gov (United States)

Hou, Huilong; Horn, Mark W.; Hamilton, Reginald F.

2016-12-01

Nanoskiving is a novel nanofabrication technique to produce shape memory alloy nanowires. Our previous work was the first to successfully fabricate NiTi alloy nanowires using the top-down approach, which leverages thin film technology and ultramicrotomy for ultra-thin sectioning. For this work, we utilized biased target ion beam deposition technology to fabricate nanoscale (i.e., sub-micrometer) NiTi alloy thin films. In contrast to our previous work, rapid thermal annealing was employed for heat treatment, and the B2 austenite to R-phase martensitic transformation was confirmed using stress-temperature and diffraction measurements. The ultramicrotome was programmable and facilitated sectioning the films to produce nanowires with thickness-to-width ratios ranging from 4:1 to 16:1. Energy dispersive X-ray spectroscopy analysis confirmed the elemental Ni and Ti make-up of the wires. The findings exposed the nanowires exhibited a natural ribbon-like curvature, which depended on the thickness-to-width ratio. The results demonstrate nanoskiving is a potential nanofabrication technique for producing NiTi alloy nanowires that are continuous with an unprecedented length on the order of hundreds of micrometers.

Fabrication of phosphor micro-grids using proton beam lithography

International Nuclear Information System (INIS)

Rossi, Paolo; Antolak, Arlyn J.; Provencio, Paula Polyak; Doyle, Barney Lee; Malmqvist, Klas; Hearne, Sean Joseph; Nilsson, Christer; Kristiansson, Per; Wegden, Marie; Elfman, Mikael; Pallon, Jan; Auzelyte, Vaida

2005-01-01

A new nuclear microscopy technique called ion photon emission microscopy or IPEM was recently invented. IPEM allows analysis involving single ions, such as ion beam induced charge (IBIC) or single event upset (SEU) imaging using a slightly modified optical microscope. The spatial resolution of IPEM is currently limited to more than 10 (micro)m by the scattering and reflection of ion-induced photons, i.e. light blooming or spreading, in the ionoluminescent phosphor layer. We are developing a 'Microscopic Gridded Phosphor' (also called Black Matrix) where the phosphor nanocrystals are confined within the gaps of a micrometer scale opaque grid, which limits the amount of detrimental light blooming. MeV-energy proton beam lithography is ideally suited to lithographically form masks for the grid because of high aspect ratio, pattern density and sub-micron resolution of this technique. In brief, the fabrication of the grids was made in the following manner: (1) a MeV proton beam focused to 1.5-2 (micro)m directly fabricated a matrix of pillars in a 15 (micro)m thick SU-8 lithographic resist; (2) 7:1 aspect ratio pillars were then formed by developing the proton exposed area; (3) Ni (Au) was electrochemically deposited onto Cu-coated Si from a sulfamate bath (or buffered CN bath); (4) the SU-8 pillars were removed by chemical etching; finally (5) the metal micro-grid was freed from its substrate by etching the underlying Cu layer. Our proposed metal micro-grids promise an order-of-magnitude improvement in the resolution of IPEM.

Design and implementation of a micron-sized electron column fabricated by focused ion beam milling

Energy Technology Data Exchange (ETDEWEB)

Wicki, Flavio, E-mail: flavio.wicki@physik.uzh.ch; Longchamp, Jean-Nicolas; Escher, Conrad; Fink, Hans-Werner

2016-01-15

We have designed, fabricated and tested a micron-sized electron column with an overall length of about 700 microns comprising two electron lenses; a micro-lens with a minimal bore of 1 micron followed by a second lens with a bore of up to 50 microns in diameter to shape a coherent low-energy electron wave front. The design criteria follow the notion of scaling down source size, lens-dimensions and kinetic electron energy for minimizing spherical aberrations to ensure a parallel coherent electron wave front. All lens apertures have been milled employing a focused ion beam and could thus be precisely aligned within a tolerance of about 300 nm from the optical axis. Experimentally, the final column shapes a quasi-planar wave front with a minimal full divergence angle of 4 mrad and electron energies as low as 100 eV. - Highlights: • Electron optics • Scaling laws • Low-energy electrons • Coherent electron beams • Micron-sized electron column.

Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

Science.gov (United States)

Zhu, Wencong

Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

Direct fabrication of a W-C SNS Josephson junction using focused-ion-beam chemical vapour deposition

International Nuclear Information System (INIS)

Dai, Jun; Kometani, Reo; Ishihara, Sunao; Warisawa, Shin’ichi; Onomitsu, Koji; Krockenberger, Yoshiharu; Yamaguchi, Hiroshi

2014-01-01

A tungsten-carbide (W-C) superconductor/normal metal/superconductor (SNS) Josephson junction has been fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). Under certain process conditions, the component ratio has been tuned from W: C: Ga = 26%: 66%: 8% in the superconducting wires to W: C: Ga = 14%: 79%: 7% in the metallic junction. The critical current density at 2.5 K in the SNS Josephson junction is 1/3 of that in W-C superconducting nanowire. Also, a Fraunhofer-like oscillation of critical current in the junction with four periods is observed. FIB-CVD opens avenues for novel functional superconducting nanodevices. (paper)

Formation and reactions of free radicals in the radiolysis of organic materials by ion beams

International Nuclear Information System (INIS)

Koizumi, H.

2000-01-01

High-energy heavy ions deposit energy along ion tracks with high density. Chemical effects of the heavy ions may hence differ from that of γ-rays and fast electrons. We can utilize these effects for material modification and fabrication of microstructure. It is necessary to know the dependence of the effects on ion beams and the variation of the effects on materials for developing new application of ion beams. We then studied radical formation in organic solids of alanine and of adipic acid by ion beams irradiation. (author)

Ion Beam Propulsion Study

Science.gov (United States)

2008-01-01

The Ion Beam Propulsion Study was a joint high-level study between the Applied Physics Laboratory operated by NASA and ASRC Aerospace at Kennedy Space Center, Florida, and Berkeley Scientific, Berkeley, California. The results were promising and suggested that work should continue if future funding becomes available. The application of ion thrusters for spacecraft propulsion is limited to quite modest ion sources with similarly modest ion beam parameters because of the mass penalty associated with the ion source and its power supply system. Also, the ion source technology has not been able to provide very high-power ion beams. Small ion beam propulsion systems were used with considerable success. Ion propulsion systems brought into practice use an onboard ion source to form an energetic ion beam, typically Xe+ ions, as the propellant. Such systems were used for steering and correction of telecommunication satellites and as the main thruster for the Deep Space 1 demonstration mission. In recent years, "giant" ion sources were developed for the controlled-fusion research effort worldwide, with beam parameters many orders of magnitude greater than the tiny ones of conventional space thruster application. The advent of such huge ion beam sources and the need for advanced propulsion systems for exploration of the solar system suggest a fresh look at ion beam propulsion, now with the giant fusion sources in mind.

Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam milling

International Nuclear Information System (INIS)

Lei, Anders; Petersen, Dirch Hjorth; Booth, Timothy John; Homann, Lasse Vinther; Kallesoe, Christian; Sukas, Ozlem Sardan; Molhave, Kristian; Boggild, Peter; Gyrsting, Yvonne

2010-01-01

Nano- and microelectromechanical structures for in situ operation in a transmission electron microscope (TEM) were fabricated with a turnaround time of 20 min and a resolution better than 100 nm. The structures are defined by focused ion beam (FIB) milling in 135 nm thin membranes of single crystalline silicon extending over the edge of a pre-fabricated silicon microchip. Four-terminal resistance measurements of FIB-defined nanowires showed at least two orders of magnitude increase in resistivity compared to bulk. We show that the initial high resistance is due to amorphization of silicon, and that current annealing recrystallizes the structure, causing the electrical properties to partly recover to the pristine bulk resistivity. In situ imaging of the annealing process revealed both continuous and abrupt changes in the crystal structure, accompanied by instant changes of the electrical conductivity. The membrane structures provide a simple way to design electron-transparent nanodevices with high local temperature gradients within the field of view of the TEM, allowing detailed studies of surface diffusion processes. We show two examples of heat-induced coarsening of gold on a narrow freestanding bridge, where local temperature gradients are controlled via the electrical current paths. The separation of device processing into a one-time batch-level fabrication of identical, generic membrane templates, and subsequent device-specific customization by FIB milling, provides unparalleled freedom in device layout combined with very short effective fabrication time. This approach significantly speeds up prototyping of nanodevices such as resonators, actuators, sensors and scanning probes with state-of-art resolution.

Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam milling

Energy Technology Data Exchange (ETDEWEB)

Lei, Anders; Petersen, Dirch Hjorth; Booth, Timothy John; Homann, Lasse Vinther; Kallesoe, Christian; Sukas, Ozlem Sardan; Molhave, Kristian; Boggild, Peter [DTU Nanotech, Department of Nano- and Microtechnology, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Gyrsting, Yvonne, E-mail: Anders.Lei@nanotech.dtu.dk [DTU Danchip, National Center for Micro- and Nanofabrication, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark)

2010-10-08

Nano- and microelectromechanical structures for in situ operation in a transmission electron microscope (TEM) were fabricated with a turnaround time of 20 min and a resolution better than 100 nm. The structures are defined by focused ion beam (FIB) milling in 135 nm thin membranes of single crystalline silicon extending over the edge of a pre-fabricated silicon microchip. Four-terminal resistance measurements of FIB-defined nanowires showed at least two orders of magnitude increase in resistivity compared to bulk. We show that the initial high resistance is due to amorphization of silicon, and that current annealing recrystallizes the structure, causing the electrical properties to partly recover to the pristine bulk resistivity. In situ imaging of the annealing process revealed both continuous and abrupt changes in the crystal structure, accompanied by instant changes of the electrical conductivity. The membrane structures provide a simple way to design electron-transparent nanodevices with high local temperature gradients within the field of view of the TEM, allowing detailed studies of surface diffusion processes. We show two examples of heat-induced coarsening of gold on a narrow freestanding bridge, where local temperature gradients are controlled via the electrical current paths. The separation of device processing into a one-time batch-level fabrication of identical, generic membrane templates, and subsequent device-specific customization by FIB milling, provides unparalleled freedom in device layout combined with very short effective fabrication time. This approach significantly speeds up prototyping of nanodevices such as resonators, actuators, sensors and scanning probes with state-of-art resolution.

Realization of a diamond based high density multi electrode array by means of Deep Ion Beam Lithography

International Nuclear Information System (INIS)

Picollo, F.; Battiato, A.; Bernardi, E.; Boarino, L.; Enrico, E.; Forneris, J.; Gatto Monticone, D.; Olivero, P.

2015-01-01

In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an optically transparent and highly insulating matrix. The proposed fabrication process consists in the combination of Deep Ion Beam Lithography (DIBL) and Focused Ion Beam (FIB) milling. FIB micromachining is employed to define micro-apertures in the contact masks consisting of thin (<10 μm) deposited metal layers through which ions are implanted in the sample. A prototypical single-cell biosensor was realized with the above described technique. The biosensor has 16 independent electrodes converging inside a circular area of 20 μm diameter (typical neuroendocrine cells size) for the simultaneous recording of amperometric signals

Multi-frequency response from a designed array of micromechanical cantilevers fabricated using a focused ion beam

International Nuclear Information System (INIS)

Ghatnekar-Nilsson, S; Graham, J; Hull, R; Montelius, L

2006-01-01

We demonstrate arrays of cantilevers with different lengths, fabricated by focused ion beam milling. The arrays of oscillators generate a spectrum of different resonant frequencies, where each frequency correlates to the corresponding individual cantilever. The frequency response from all the cantilevers is collected from a single measurement under the same environment and conditions for the entire array. The mass response of the system generated the same Δf/f 0 for the cantilevers, within 0.1% accuracy. We denote the method MFSAC: multi-frequency signal analysis from an array of cantilevers. The simultaneous detection of several frequencies in one spectrum has great benefits in mass sensor applications, offering the possibility for true label-free detection

Focused ion beam patterned Hall nano-sensors

International Nuclear Information System (INIS)

Candini, A.; Gazzadi, G.C.; Di Bona, A.; Affronte, M.; Ercolani, D.; Biasiol, G.; Sorba, L.

2007-01-01

By means of focused ion beam milling, we fabricate Hall magnetometers with active areas as small as 100x100nm 2 . The constituent material can either be metallic (Au), semimetallic (Bi) or doped bulk semiconducting (Si doped GaAs). We experimentally show that Au nano-probes can work from room temperature down to liquid helium with magnetic flux sensitivity -1 Φ 0

Three-dimensional patterning in polymer optical waveguides using focused ion beam milling

Science.gov (United States)

Kruse, Kevin; Burrell, Derek; Middlebrook, Christopher

2016-07-01

Waveguide (WG) photonic-bridge taper modules are designed for symmetric planar coupling between silicon WGs and single-mode fibers (SMFs) to minimize photonic chip and packaging footprint requirements with improving broadband functionality. Micromachined fabrication and evaluation of polymer WG tapers utilizing high-resolution focused ion beam (FIB) milling is performed and presented. Polymer etch rates utilizing the FIB and optimal methods for milling polymer tapers are identified for three-dimensional patterning. Polymer WG tapers with low sidewall roughness are manufactured utilizing FIB milling and optically tested for fabrication loss. FIB platforms utilize a focused beam of ions (Ga+) to etch submicron patterns into substrates. Fabricating low-loss polymer WG taper prototypes with the FIB before moving on to mass-production techniques provides theoretical understanding of the polymer taper and its feasibility for connectorization devices between silicon WGs and SMFs.

Surrey Ion Beam Centre: the EPSRC MRF for ion beam applications - 01002

International Nuclear Information System (INIS)

Webb, R.P.

2016-01-01

The SIBC (Surrey Ion Beam Centre) is an element of the Virtual Ion Beam Centre that coordinates 3 U.K. experimental facilities: SIBC (University of Surrey) for implantation and ion beam applications, Miami and MEIS facility (University of Huddersfield) and gamma ray and neutron irradiation emulation facility (University of Manchester). The SIBC works actively with industry, developing bespoke processes and services, particularly for the photonics industry and provides ion beam facilities to about 20 companies across the world. It operates a stringent quality control program and is one of the few ion beam laboratories in the world to operate under ISO 9001 certification. The equipment of SIBC is presented and some applications of ion beam analysis concerning the identification of gunshot residues, the determination of the origin of a painting, the analysis of proteins are described. Different techniques such as PIXE (Particle Induced X-ray Emission), RBS (Rutherford Backscattering Spectroscopy), NRA (Nuclear Reaction Analysis), SIMS (Secondary Ion Mass Spectrometry) are also explained in the slides of the presentation that have been added at the end of the paper

Ion beam neutralization with ferroelectrically generated electron beams

Energy Technology Data Exchange (ETDEWEB)

Herleb, U; Riege, H [European Organization for Nuclear Research, Geneva (Switzerland). LHC Division

1997-12-31

A technique for ion beam space-charge neutralization with pulsed electron beams is described. The intensity of multiply-charged ions produced with a laser ion source can be enhanced or decreased separately with electron beam trains of MHz repetition rate. These are generated with ferroelectric cathodes, which are pulsed in synchronization with the laser ion source. The pulsed electron beams guide the ion beam in a similar way to the alternating gradient focusing of charged particle beams in circular accelerators such as synchrotrons. This new neutralization technology overcomes the Langmuir-Child space-charge limit and may in future allow ion beam currents to be transported with intensities by orders of magnitude higher than those which can be accelerated today in a single vacuum tube. (author). 6 figs., 10 refs.

Electron Beam Ion Sources

CERN Document Server

Zschornacka, G.; Thorn, A.

2013-12-16

Electron beam ion sources (EBISs) are ion sources that work based on the principle of electron impact ionization, allowing the production of very highly charged ions. The ions produced can be extracted as a DC ion beam as well as ion pulses of different time structures. In comparison to most of the other known ion sources, EBISs feature ion beams with very good beam emittances and a low energy spread. Furthermore, EBISs are excellent sources of photons (X-rays, ultraviolet, extreme ultraviolet, visible light) from highly charged ions. This chapter gives an overview of EBIS physics, the principle of operation, and the known technical solutions. Using examples, the performance of EBISs as well as their applications in various fields of basic research, technology and medicine are discussed.

Ion beam diagnosis

International Nuclear Information System (INIS)

Strehl, P.

1994-04-01

This report is an introduction to ion beam diagnosis. After a short description of the most important ion beam parameters measurements of the beam current by means of Faraday cups, calorimetry, and beam current transformers and measurements of the beam profile by means of viewing screens, profile grids and scanning devices, and residual gas ionization monitors are described. Finally measurements in the transverse and longitudinal phase space are considered. (HSI)

A Study on the Ion Beam Extraction using Duo-PiGatron Ion source for Vertical Type Ion Beam Facility

Energy Technology Data Exchange (ETDEWEB)

Kim, Bom Sok; Lee, Chan young; Lee, Jae Sang [KAERI, Daejeon (Korea, Republic of)

2015-05-15

In Korea Multipurpose Accelerator Complex (KOMAC), we have started ion beam service in the new beam utilization building since March this year. For various ion beam irradiation services, we are developed implanters such as metal (150keV/1mA), gaseous (200keV/5mA) and high current ion beam facility (20keV/150mA). One of the new one is a vertical type ion beam facility without acceleration tube (60keV/20mA) which is easy to install the sample. After the installation is complete, it is where you are studying the optimal ion beam extraction process. Detailed experimental results will be presented. Vertical Type Ion Beam Facility without acceleration tube of 60keV 20mA class was installed. We successfully extracted 60keV 20mA using Duo- PiGatron Ion source for Vertical Type Ion Beam Facility. Use the BPM and Faraday-cup, is being studied the optimum conditions of ion beam extraction.

Optical waveguides in fluoride lead silicate glasses fabricated by carbon ion implantation

Science.gov (United States)

Shen, Xiao-liang; Wang, Yue; Zhu, Qi-feng; Lü, Peng; Li, Wei-nan; Liu, Chun-xiao

2018-03-01

The carbon ion implantation with energy of 4.0 MeV and a dose of 4.0×1014 ions/cm2 is employed for fabricating the optical waveguide in fluoride lead silicate glasses. The optical modes as well as the effective refractive indices are measured by the prism coupling method. The refractive index distribution in the fluoride lead silicate glass waveguide is simulated by the reflectivity calculation method (RCM). The light intensity profile and the energy losses are calculated by the finite-difference beam propagation method (FD-BPM) and the program of stopping and range of ions in matter (SRIM), respectively. The propagation properties indicate that the C2+ ion-implanted fluoride lead silicate glass waveguide is a candidate for fabricating optical devices.

Beam-plasma instability in ion beam systems used in neutral beam generation

International Nuclear Information System (INIS)

Hooper, E.B. Jr.

1977-02-01

The beam-plasma instability is analyzed for the ion beams used for neutral beam generation. Both positive and negative ion beams are considered. Stability is predicted when the beam velocity is less than the electron thermal velocity; the only exception occurs when the electron density accompanying a negative ion beam is less than the ion density by nearly the ratio of electron to ion masses. For cases in which the beam velocity is greater than the electron thermal velocity, instability is predicted near the electron plasma frequency

Charging suppression in focused-ion beam fabrication of visible subwavelength dielectric grating reflector using electron conducting polymer

KAUST Repository

Alias, Mohd Sharizal; Liao, Hsien-Yu; Ng, Tien Khee; Ooi, Boon S.

2015-01-01

Nanoscale periodic patterning on insulating materials using focused-ion beam (FIB) is challenging because of charging effect, which causes pattern distortion and resolution degradation. In this paper, the authors used a charging suppression scheme using electron conducting polymer for the implementation of FIB patterned dielectric subwavelength grating (SWG) reflector. Prior to the FIB patterning, the authors numerically designed the optimal structure and the fabrication tolerance for all grating parameters (period, grating thickness, fill-factor, and low refractive index layer thickness) using the rigorous-coupled wave analysis computation. Then, the authors performed the FIB patterning on the dielectric SWG reflector spin-coated with electron conducting polymer for the anticharging purpose. They also performed similar patterning using thin conductive film anticharging scheme (30 nm Cr coating) for comparison. Their results show that the electron conducting polymer anticharging scheme effectively suppressing the charging effect during the FIB patterning of dielectric SWG reflector. The fabricated grating exhibited nanoscale precision, high uniformity and contrast, constant patterning, and complied with fabrication tolerance for all grating parameters across the entire patterned area. Utilization of electron conducting polymer leads to a simpler anticharging scheme with high precision and uniformity for FIB patterning on insulator materials.

Charging suppression in focused-ion beam fabrication of visible subwavelength dielectric grating reflector using electron conducting polymer

KAUST Repository

Alias, Mohd Sharizal

2015-08-19

Nanoscale periodic patterning on insulating materials using focused-ion beam (FIB) is challenging because of charging effect, which causes pattern distortion and resolution degradation. In this paper, the authors used a charging suppression scheme using electron conducting polymer for the implementation of FIB patterned dielectric subwavelength grating (SWG) reflector. Prior to the FIB patterning, the authors numerically designed the optimal structure and the fabrication tolerance for all grating parameters (period, grating thickness, fill-factor, and low refractive index layer thickness) using the rigorous-coupled wave analysis computation. Then, the authors performed the FIB patterning on the dielectric SWG reflector spin-coated with electron conducting polymer for the anticharging purpose. They also performed similar patterning using thin conductive film anticharging scheme (30 nm Cr coating) for comparison. Their results show that the electron conducting polymer anticharging scheme effectively suppressing the charging effect during the FIB patterning of dielectric SWG reflector. The fabricated grating exhibited nanoscale precision, high uniformity and contrast, constant patterning, and complied with fabrication tolerance for all grating parameters across the entire patterned area. Utilization of electron conducting polymer leads to a simpler anticharging scheme with high precision and uniformity for FIB patterning on insulator materials.

Biomaterials modification by ion beam

International Nuclear Information System (INIS)

Zhang Tonghe; Yi Zhongzhen; Zhang Xu; Wu Yuguang

2001-01-01

Ion beam technology is one of best ways for the modification of biomaterials. The results of ion beam modification of biomaterials are given. The method and results of improved biocompatibility are indicated by ion beam technology. The future development of ion beam modification of biomaterials is discussed

Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method

International Nuclear Information System (INIS)

Wei, H.X.; Wang, T.X.; Zeng, Z.M.; Zhang, X.Q.; Zhao, J.; Han, X.F.

2006-01-01

The controlled fabrication method for nano-scale double barrier magnetic tunnel junctions (DBMTJs) with the layer structure of Ta(5)/Cu(10)/Ni 79 Fe 21 (5)/Ir 22 Mn 78 (12)/Co 6 Fe 2 B 2 (4)/Al(1) -oxide/Co 6 Fe 2 B 2 (6)/Al (1)-oxide/Co 6 Fe 2 B 2 (4)/Ir 22 Mn 78 (12)/Ni 79 Fe 21 (5)/Ta(5) (thickness unit: nm) was used. This method involved depositing thin multi-layer stacks by sputtering system, and depositing a Pt nano-pillar using a focused ion beam which acted both as a top contact and as an etching mask. The advantages of this process over the traditional process using e-beam and optical lithography in that it involve only few processing steps, e.g. it does not involve any lift-off steps. In order to evaluate the nanofabrication techniques, the DBMTJs with the dimensions of 200 nmx400 nm, 200 nmx200 nm nano-scale were prepared and their R-H, I-V characteristics were measured.

Iodine Beam Dump Design and Fabrication

Science.gov (United States)

Polzin, K. A.; Bradley, D. E.

2017-01-01

During the testing of electric thrusters, high-energy ions impacting the walls of a vacuum chamber can cause corrosion and/or sputtering of the wall materials, which can damage the chamber walls. The sputtering can also introduce the constituent materials of the chamber walls into an experiment, with those materials potentially migrating back to the test article and coating it with contaminants over time. The typical method employed in this situation is to install a beam dump fabricated from materials that have a lower sputter yield, thus reducing the amount of foreign material that could migrate towards the test article or deposit on anything else present in the vacuum facility.

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

International Nuclear Information System (INIS)

Altun, Ali Ozhan; Jeong, Jun-Ho; Rha, Jong-Joo; Kim, Ki-Don; Lee, Eung-Sug

2007-01-01

Cubic boron nitride (c-BN) is one of the hardest known materials (second after diamond). It has a high level of chemical resistance and high UV transmittance. In this study, a stamp for ultra-violet nanoimprint lithography (UV-NIL) was fabricated using a bi-layered BN film deposited on a quartz substrate. Deposition of the BN was done using RF magnetron sputtering. A hexagonal boron nitride (h-BN) layer was deposited for 30 min before c-BN was deposited for 30 min. The thickness of the film was measured as 160 nm. The phase of the c-BN layer was investigated using Fourier transform infrared (FTIR) spectrometry, and it was found that the c-BN layer has a 40% cubic phase. The deposited film was patterned using focused ion beam (FIB) lithography for use as a UV-NIL stamp. Line patterns were fabricated with the line width and line distance set at 150 and 150 nm, respectively. The patterning process was performed by applying different currents to observe the effect of the current value on the pattern profile. The fabricated patterns were investigated using AFM, and it was found that the pattern fabricated by applying a current value of 50 picoamperes (pA) has a better profile with a 65 nm line depth. The UV transmittance of the 160 nm thick film was measured to be 70-86%. The hardness and modulus of the BN was measured to be 12 and 150 GPa, respectively. The water contact angle of the stamp surface was measured at 75 0 . The stamp was applied to UV-NIL without coating with an anti-adhesion layer. Successful imprinting was proved via scanning electron microscope (SEM) images of the imprinted resin

Reaching for highest ion beam intensities through laser ion acceleration and beam compression

Energy Technology Data Exchange (ETDEWEB)

Schumacher, Dennis; Brabetz, Christian; Blazevic, Abel; Bagnoud, Vincent; Weih, Simon [GSI Helmholtzzentrum fuer Schwerionenforschung (Germany); Jahn, Diana; Ding, Johannes; Roth, Markus [TU Darmstadt (Germany); Kroll, Florian; Schramm, Ulrich; Cowan, Tom [Helmholtzzentrum Dresden Rossendorf (Germany); Collaboration: LIGHT-Collaboration

2016-07-01

Laser ion acceleration provides access to ion sources with unique properties. To use these capabilities the LIGHT collaboration (Laser Ion Generation Handling and Transport) was founded. The aim of this collaboration is the beam transport and manipulation of laser accelerated ions with conventional accelerator structures. Therefor a dedicated beam line has been build up at GSI Helmholtzzentrum fuer Schwerionenforschung. With this beam line the manipulation of the transversal and also the longitudinal beam parameters has been achieved. It has been shown that laser generated ion beams can be transported over more than 6 meters and pulses shorter than 300 ps can be generated at this distance. This Talk will give an overview over the recent developments and plans of the LIGHT collaboration.

Advanced design of positive-ion sources for neutral-beam applications

International Nuclear Information System (INIS)

Marguerat, E.F.; Haselton, H.H.; Menon, M.M.; Schechter, D.E.; Stirling, W.L.; Tsai, C.C.

1982-01-01

The APIS ion source is being developed to meet a goal of producing ion beams of less than or equal to 200 keV, 100 A, with 10-30-s pulse lengths. In a continuing effort to advance the state of the art and to produce long pulse ion beams, APIS ion sources with grid dimensions of 10 x 25 cm, 13 x 43 cm, and 16 x 48 cm are being developed. In the past year, the 10- x 25-cm ion source has been operated to produce ion beams in excess of 100 keV for many seconds pulse length. An advanced design concept is being pursued with the primary objectives to improve radiation protection, reduce fabrication costs, and simplify maintenance. The source magnetic sheild will be designed as a vacuum enclosure to house all source components. The electrical insulation requirements of energy recovery are also considered. Because of the frequent maintenance requirements, the electron emitter assembly will be designed with a remote handling capability. A new accelerator design which incorporates the necessary neutron shielding and associated steering gimbal system is also described

Fabrication of optical channel waveguides in crystals and glasses using macro- and micro ion beams

Czech Academy of Sciences Publication Activity Database

Banyasz, I.; Rajta, I.; Nagy, G. U. L.; Zolnai, Z.; Havránek, Vladimír; Veres, M.; Berneschi, S.; Nunzi-Conti, G.; Righini, G. C.

2014-01-01

Roč. 331, JUL (2014), s. 157-162 ISSN 0168-583X R&D Projects: GA MŠk(XE) LM2011019 Institutional support: RVO:61389005 Keywords : channel optical waveguides * ion beam irradiation * focussed ion beam * Er-doped tungsten-tellurite glass * Bismuth germanate * Micro Raman spectroscopy Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.124, year: 2014

Nanofabrication by ion-beam sputtering fundamentals and applications

CERN Document Server

Som, Tapobrata

2012-01-01

Considerable attention has been paid to ion beam sputtering as an effective way to fabricate self-organized nano-patterns on various substrates. The significance of this method for patterning surfaces is that the technique is fast, simple, and less expensive. The possibility to create patterns on very large areas at once makes it even more attractive. This book reviews various fascinating results, understand the underlying physics of ion induced pattern formation, to highlight the potential applications of the patterned surfaces, and to explore the patterning behavior by different irradiation

Beam brilliance investigation of high current ion beams at GSI heavy ion accelerator facility.

Science.gov (United States)

Adonin, A A; Hollinger, R

2014-02-01

In this work the emittance measurements of high current Ta-beam provided by VARIS (Vacuum Arc Ion Source) ion source are presented. Beam brilliance as a function of beam aperture at various extraction conditions is investigated. Influence of electrostatic ion beam compression in post acceleration gap on the beam quality is discussed. Use of different extraction systems (single aperture, 7 holes, and 13 holes) in order to achieve more peaked beam core is considered. The possible ways to increase the beam brilliance are discussed.

A fast beam-ion instability

Energy Technology Data Exchange (ETDEWEB)

Stupakov, G V [Stanford Linear Accelerator Center, Menlo Park, CA (United States)

1996-08-01

The ionization of residual gas by an electron beam in an accelerator generates ions that can resonantly couple to the beam through a wave propagating in the beam-ion system. Results of the study of a beam-ion instability are presented for a multi-bunch train taking into account the decoherence of ion oscillations due to the ion frequency spread and spatial variation of the ion frequency. It is shown that the combination of both effects can substantially reduce the growth rate of the instability. (author)

Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

Science.gov (United States)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

2012-02-01

Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

Advancements in ion beam figuring of very thin glass plates (Conference Presentation)

Science.gov (United States)

Civitani, M.; Ghigo, M.; Hołyszko, J.; Vecchi, G.; Basso, S.; Cotroneo, V.; DeRoo, C. T.; Schwartz, E. D.; Reid, P. B.

2017-09-01

The high-quality surface characteristics, both in terms of figure error and of micro-roughness, required on the mirrors of a high angular resolution x-ray telescope are challenging, but in principle well suited with a deterministic and non-contact process like the ion beam figuring. This process has been recently proven to be compatible even with very thin (thickness around 0.4mm) sheet of glasses (like D263 and Eagle). In the last decade, these types of glass have been investigated as substrates for hot slumping, with residual figure errors of hundreds of nanometres. In this view, the mirrors segments fabrication could be envisaged as a simple two phases process: a first replica step based on hot slumping (direct/indirect) followed by an ion beam figuring which can be considered as a post-fabrication correction method. The first ion beam figuring trials, realized on flat samples, showed that the micro-roughness is not damaged but a deeper analysis is necessary to characterize and eventually control/compensate the glass shape variations. In this paper, we present the advancements in the process definition, both on flat and slumped glass samples.

Development of a beam ion velocity detector for the heavy ion beam probe

International Nuclear Information System (INIS)

Fimognari, P. J.; Crowley, T. P.; Demers, D. R.

2016-01-01

In an axisymmetric plasma, the conservation of canonical angular momentum constrains heavy ion beam probe (HIBP) trajectories such that measurement of the toroidal velocity component of secondary ions provides a localized determination of the poloidal flux at the volume where they originated. We have developed a prototype detector which is designed to determine the beam angle in one dimension through the detection of ion current landing on two parallel planes of detecting elements. A set of apertures creates a pattern of ion current on wires in the first plane and solid metal plates behind them; the relative amounts detected by the wires and plates determine the angle which beam ions enter the detector, which is used to infer the toroidal velocity component. The design evolved from a series of simulations within which we modeled ion beam velocity changes due to equilibrium and fluctuating magnetic fields, along with the ion beam profile and velocity dispersion, and studied how these and characteristics such as the size, cross section, and spacing of the detector elements affect performance.

Development of a beam ion velocity detector for the heavy ion beam probe

Energy Technology Data Exchange (ETDEWEB)

Fimognari, P. J., E-mail: PJFimognari@XanthoTechnologies.com; Crowley, T. P.; Demers, D. R. [Xantho Technologies, LLC, Madison, Wisconsin 53705 (United States)

2016-11-15

In an axisymmetric plasma, the conservation of canonical angular momentum constrains heavy ion beam probe (HIBP) trajectories such that measurement of the toroidal velocity component of secondary ions provides a localized determination of the poloidal flux at the volume where they originated. We have developed a prototype detector which is designed to determine the beam angle in one dimension through the detection of ion current landing on two parallel planes of detecting elements. A set of apertures creates a pattern of ion current on wires in the first plane and solid metal plates behind them; the relative amounts detected by the wires and plates determine the angle which beam ions enter the detector, which is used to infer the toroidal velocity component. The design evolved from a series of simulations within which we modeled ion beam velocity changes due to equilibrium and fluctuating magnetic fields, along with the ion beam profile and velocity dispersion, and studied how these and characteristics such as the size, cross section, and spacing of the detector elements affect performance.

Operating characteristics of a new ion source for KSTAR neutral beam injection system.

Science.gov (United States)

Kim, Tae-Seong; Jeong, Seung Ho; Chang, Doo-Hee; Lee, Kwang Won; In, Sang-Ryul

2014-02-01

A new positive ion source for the Korea Superconducting Tokamak Advanced Research neutral beam injection (KSTAR NBI-1) system was designed, fabricated, and assembled in 2011. The characteristics of the arc discharge and beam extraction were investigated using hydrogen and helium gas to find the optimum operating parameters of the arc power, filament voltage, gas pressure, extracting voltage, accelerating voltage, and decelerating voltage at the neutral beam test stand at the Korea Atomic Energy Research Institute in 2012. Based on the optimum operating condition, the new ion source was then conditioned, and performance tests were primarily finished. The accelerator system with enlarged apertures can extract a maximum 65 A ion beam with a beam energy of 100 keV. The arc efficiency and optimum beam perveance, at which the beam divergence is at a minimum, are estimated to be 1.0 A/kW and 2.5 uP, respectively. The beam extraction tests show that the design goal of delivering a 2 MW deuterium neutral beam into the KSTAR Tokamak plasma is achievable.

A specialized bioengineering ion beam line

International Nuclear Information System (INIS)

Yu, L.D.; Sangyuenyongpipat, S.; Sriprom, C.; Thongleurm, C.; Suwanksum, R.; Tondee, N.; Prakrajang, K.; Vilaithong, T.; Brown, I.G.; Wiedemann, H.

2007-01-01

A specialized bioengineering ion beam line has recently been completed at Chiang Mai University to meet rapidly growing needs of research and application development in low-energy ion beam biotechnology. This beam line possesses special features: vertical main beam line, low-energy (30 keV) ion beams, double swerve of the beam, a fast pumped target chamber, and an in-situ atomic force microscope (AFM) system chamber. The whole beam line is situated in a bioclean environment, occupying two stories. The quality of the ion beam has been studied. It has proved that this beam line has significantly contributed to our research work on low-energy ion beam biotechnology

Ion beam analysis fundamentals and applications

CERN Document Server

Nastasi, Michael; Wang, Yongqiang

2015-01-01

Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization.The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nucle

HIGH ENERGY DENSITY PHYSICS EXPERIMENTS WITH INTENSE HEAVY ION BEAMS

International Nuclear Information System (INIS)

Bieniosek, F.M.; Henestroza, E.; Leitner, M.; Logan, B.G.; More, R.M.; Roy, P.K.; Ni, P.; Seidl, P.A.; Waldron, W.L.; Barnard, J.J.

2008-01-01

The US heavy ion fusion science program has developed techniques for heating ion-beam-driven warm dense matter (WDM) targets. The WDM conditions are to be achieved by combined longitudinal and transverse space-charge neutralized drift compression of the ion beam to provide a hot spot on the target with a beam spot size of about 1 mm, and pulse length about 1-2 ns. As a technique for heating volumetric samples of matter to high energy density, intense beams of heavy ions are capable of delivering precise and uniform beam energy deposition dE/dx, in a relatively large sample size, and the ability to heat any solid-phase target material. Initial experiments use a 0.3 MeV K+ beam (below the Bragg peak) from the NDCX-I accelerator. Future plans include target experiments using the NDCX-II accelerator, which is designed to heat targets at the Bragg peak using a 3-6 MeV lithium ion beam. The range of the beams in solid matter targets is about 1 micron, which can be lengthened by using porous targets at reduced density. We have completed the fabrication of a new experimental target chamber facility for WDM experiments, and implemented initial target diagnostics to be used for the first target experiments in NDCX-1. The target chamber has been installed on the NDCX-I beamline. The target diagnostics include a fast multi-channel optical pyrometer, optical streak camera, VISAR, and high-speed gated cameras. Initial WDM experiments will heat targets by compressed NDCX-I beams and will explore measurement of temperature and other target parameters. Experiments are planned in areas such as dense electronegative targets, porous target homogenization and two-phase equation of state

Immediate fabrication of flower-like graphene oxide by ion beam bombardment

International Nuclear Information System (INIS)

Cheng, Junjie; Zhang, Yuanyuan; Zhang, Guilong; Xiong, Shiquan; Pei, Renjun; Cai, Dongqing; Wu, Zhengyan

2015-01-01

Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

Immediate fabrication of flower-like graphene oxide by ion beam bombardment

Energy Technology Data Exchange (ETDEWEB)

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Yuanyuan; Zhang, Guilong [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); University of Science and Technology of China, Hefei 230026 (China); Xiong, Shiquan [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Dongqing, E-mail: dqcai@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China)

2015-12-01

Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

International Nuclear Information System (INIS)

Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

1999-01-01

The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

The role of space charge compensation for ion beam extraction and ion beam transport (invited)

International Nuclear Information System (INIS)

Spädtke, Peter

2014-01-01

Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation

Ion beam generation and focusing

International Nuclear Information System (INIS)

Miller, P.A.; Mendel, C.W.; Swain, D.W.; Goldstein, S.A.

1975-01-01

Calculations have shown that efficiently generated and focused ion beams could have significant advantages over electron beams in achieving ignition of inertially-confined thermonuclear fuel. Efficient ion beam generation implies use of a good ion source and suppression of net electron current. Net electron flow can be reduced by allowing electrons to reflex through a highly transparent anode or by use of transverse magnetic fields (either beam self-fields or externally applied fields). Geometric focusing can be achieved if the beam is generated by appropriately shaped electrodes. Experimental results are presented which demonstrate ion beam generation in both reflexing and pinched-flow diodes. Spherically shaped electrodes are used to concentrate a proton beam, and target response to proton deposition is studied

Freestanding nanostructures via reactive ion beam angled etching

Directory of Open Access Journals (Sweden)

Haig A. Atikian

2017-05-01

Full Text Available Freestanding nanostructures play an important role in optical and mechanical devices for classical and quantum applications. Here, we use reactive ion beam angled etching to fabricate optical resonators in bulk polycrystalline and single crystal diamond. Reported quality factors are approximately 30 000 and 286 000, respectively. The devices show uniformity across 25 mm samples, a significant improvement over comparable techniques yielding freestanding nanostructures.

Focused ion beam patterning to dielectrophoretically assemble single nanowire based devices

International Nuclear Information System (INIS)

La Ferrara, V; Massera, E; Francia, G Di; Alfano, B

2010-01-01

Direct-write processing is increasingly taking place in nanodevice fabrication. In this work, Focused Ion Beam (FIB), a powerful tool in maskless micromachining, is used for electrode patterning onto a silicon/silicon nitride substrate. Then a single palladium nanowire is assembled between electrodes by means of dielectrophoresis (DEP). The nanowire morphology depends on the electrode pattern when DEP conditions are fixed. FIB/DEP combination overcomes the problem of nanowire electrical contamination due to gallium ion bombardment and the as-grown nanowire retains its basic electrical properties. Single nanowire based devices have been fabricated with this novel approach and have been tested as hydrogen sensors, confirming the reliability of this technology.

Angular Dependence of the Ion-Induced Secondary Electron Emission for He+ and Ga+ Beams

NARCIS (Netherlands)

Castaldo, V.; Withagen, J.; Hagen, C.; Kruit, P.; Van Veldhoven, E.

2011-01-01

In recent years, novel ion sources have been designed and developed that have enabled focused ion beam machines to go beyond their use as nano-fabrication tools. Secondary electrons are usually taken to form images, for their yield is high and strongly dependent on the surface characteristics, in

Ion-Beam-Excited Electrostatic Ion Cyclotron Waves

DEFF Research Database (Denmark)

Michelsen, Poul; Pécseli, Hans; Juul Rasmussen, Jens

1976-01-01

Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field.......Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field....

A positive (negative) surface ionization source concept for radioactive ion beam generation

International Nuclear Information System (INIS)

Alton, G.D.; Mills, G.D.

1996-01-01

A novel, versatile, new concept, spherical-geometry, positive (negative) surface-ionization source has been designed and fabricated which will have the capability of generating both positive- and negative-ion beams without mechanical changes to the source. The source utilizes a highly permeable, high-work-function Ir ionizer (φ ≅ 5.29 eV) for ionizing highly electropositive atoms/molecules; while for negative-surface ionization, the work function is lowered by continually feeding a highly electropositive vapor through the ionizer matrix. The use of this technique to effect low work function surfaces for negative ion beam generation has the potential of overcoming the chronic poisoning effects experienced with LaB 6 while enhancing the probability for negative ion formation of atomic and molecular species with low to intermediate electron affinities. The flexibility of operation in either mode makes it especially attractive for radioactive ion beam (RIB) applications and, therefore, the source will be used as a complementary replacement for the high-temperature electron impact ionization sources presently in the use at the Holifield radioactive ion beam facility (HRIBF). The design features and operational principles of the source are described in this report. (orig.)

Low energy ion beam dynamics of NANOGAN ECR ion source

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sarvesh, E-mail: sarvesh@iuac.res.in; Mandal, A.

2016-04-01

A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

Fabrication of single nanofluidic channels in poly(methylmethacrylate) films via focused-ion beam milling for use as molecular gates

International Nuclear Information System (INIS)

Cannon, Donald M. Jr.; Flachsbart, Bruce R.; Shannon, Mark A.; Sweedler, Jonathan V.; Bohn, Paul W.

2004-01-01

Focused-ion beam (FIB) milling provides rapid fabrication of individual cylindrical submicrometer channels with reproducible dimensions (±5% diameters) through 8-μm thick poly(methylmethacrylate) (PMMA) films. PMMA films are spincast on sacrificial Si carriers and sputter-coated with Au before the 30-kV gallium FIB milling process. By adding a trace amount of poly(ethyleneoxide) and poly(dimethylsiloxane) to the PMMA solution before casting, the films can be released for subsequent mounting in microfluidic devices to create hybrid microfluidic-nanofluidic multilevel architectures. In situ FIB sectioning demonstrates the smooth cylindrical surface within the pore. Placing a milled film in contact with an aqueous fluorescein solution fills the channel by capillary action, as verified by confocal fluorescence microscopy. Confocal fluorescence of dyed films reveals that the pores span the thickness of the PMMA film. Small arrays of channels with a defined number and density and arbitrary in-plane spatial arrangement are fabricated with this process, allowing a unique testbed for high aspect ratio nanofluidic devices

Fusion at counterstreaming ion beams - ion optic fusion (IOF)

International Nuclear Information System (INIS)

Gryzinski, M.

1981-01-01

The results of investigation are briefly reviewed in the field of ion optic fusion performed at the Institute of Nuclear Research in Swierk. The ion optic fusion concept is based on the possibility of obtaining fusion energy at highly ordered motion of ions in counterstreaming ion beams. For this purpose TW ion beams must be produced and focused. To produce dense and charge-neutralized ion beams the selective conductivity and ballistic focusing ideas were formulated and used in a series of RPI devices with low-pressure cylindrical discharge between grid-type electrodes. 100 kA, 30 keV deuteron beams were successfully produced and focused into the volume of 1 cm 3 , yielding 10 9 neutrons per 200 ns shot on a heavy ice target. Cylindrically convergent ion beams with magnetic anti-defocusing were proposed in order to reach a positive energy gain at reasonable energy level. (J.U.)

Study on the Deposition Rate Depending on Substrate Position by Using Ion Beam Sputtering Deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2014-05-15

Ion beams have been used for over thirty years to modify materials in manufacturing of integrated circuits, and improving the corrosion properties of surfaces. Recently, the requirements for ion beam processes are becoming especially challenging in the following areas : ultra shallow junction formation for LSI fabrication, low damage high rate ion beam sputtering and smoothing, high quality functional surface treatment for electrical and optical properties. Ion beam sputtering is an attractive technology for the deposition of thin film coatings onto a broad variety of polymer, Si-wafer, lightweight substrates. Demand for the decoration metal is increasing. In addition, lightweight of parts is important, because of energy issues in the industries. Although a lot of researches have been done with conventional PVD methods for the deposition of metal or ceramic films on the surface of the polymer, there are still adhesion problems.

Ion-Ion Plasmas Produced by Electron Beams

Science.gov (United States)

Fernsler, R. F.; Leonhardt, D.; Walton, S. G.; Meger, R. A.

2001-10-01

The ability of plasmas to etch deep, small-scale features in materials is limited by localized charging of the features. The features charge because of the difference in electron and ion anisotropy, and thus one solution now being explored is to use ion-ion plasmas in place of electron-ion plasmas. Ion-ion plasmas are effectively electron-free and consist mainly of positive and negative ions. Since the two ion species behave similarly, localized charging is largely eliminated. However, the only way to produce ion-ion plasmas at low gas pressure is to convert electrons into negative ions through two-body attachment to neutrals. While the electron attachment rate is large at low electron temperatures (Te < 1 eV) in many of the halogen gases used for processing, these temperatures occur in most reactors only during the afterglow when the heating fields are turned off and the plasma is decaying. By contrast, Te is low nearly all the time in plasmas produced by electron beams, and therefore electron beams can potentially produce ion-ion plasmas continuously. The theory of ion-ion plasmas formed by pulsed electron beams is examined in this talk and compared with experimental results presented elsewhere [1]. Some general limitations of ion-ion plasmas, including relatively low flux levels, are discussed as well. [1] See the presentation by D. Leonhardt et al. at this conference.

Ion-beam etching of ramps in thin film heterostructures

International Nuclear Information System (INIS)

Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

2002-01-01

Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

Constructing carbon nanotube junctions by Ar ion beam irradiation

International Nuclear Information System (INIS)

Ishaq, Ahmad; Ni Zhichun; Yan Long; Gong Jinlong; Zhu Dezhang

2010-01-01

Carbon nanotubes (CNTs) irradiated by Ar ion beams at elevated temperature were studied. The irradiation-induced defects in CNTs are greatly reduced by elevated temperature. Moreover, the two types of CNT junctions, the crossing junction and the parallel junction, were formed. And the CNT networks may be fabricated by the two types of CNT junctions. The formation process and the corresponding mechanism of CNT networks are discussed.

Intense ion beam generator

International Nuclear Information System (INIS)

Humphries, S. Jr.; Sudan, R.N.

1977-01-01

Methods and apparatus for producing intense megavolt ion beams are disclosed. In one embodiment, a reflex triode-type pulsed ion accelerator is described which produces ion pulses of more than 5 kiloamperes current with a peak energy of 3 MeV. In other embodiments, the device is constructed so as to focus the beam of ions for high concentration and ease of extraction, and magnetic insulation is provided to increase the efficiency of operation

Ion beam assisted film growth

CERN Document Server

Itoh, T

2012-01-01

This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Science.gov (United States)

Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

2012-07-23

A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

Beam-plasma discharge in a Kyoto beam-plasma-ion source

International Nuclear Information System (INIS)

Ishikawa, J.; Takagi, T.

1983-01-01

A beam-plasma type ion source employing an original operating principle has been developed by the present authors. The ion source consists of an ion extraction region with an electron gun, a thin long drift tube as the plasma production chamber, and a primary electron beam collector. An electron beam is effectively utilized for the dual purpose of high density plasma production as a result of beam-plasma discharge, and high current ion beam extraction with ion space-charge compensation. A high density plasma of the order of 10 11 --10 13 cm -3 was produced by virtue of the beam-plasma discharge which was caused by the interaction between a space-charge wave on the electron beam and a high frequency plasma wave. The plasma density then produced was 10 2 --10 3 times the density produced only by collisional ionization by the electron beam. In order to obtain a stable beam-plasma discharge, a secondary electron beam emitted from the electron collector should be utilized. The mechanism of the beam-plasma discharge was analyzed by use of a linear theory in the case of the small thermal energy of the electron beam, and by use of a quasilinear theory in the case of the large thermal energy. High current ion beams of more than 0.1 A were extracted even at a low extraction voltage of 1--5 kV

Rapid prototyping of magnetic tunnel junctions with focused ion beam processes

International Nuclear Information System (INIS)

Persson, Anders; Thornell, Greger; Nguyen, Hugo

2010-01-01

Submicron-sized magnetic tunnel junctions (MTJs) are most often fabricated by time-consuming and expensive e-beam lithography. From a research and development perspective, a short lead time is one of the major concerns. Here, a rapid process scheme for fabrication of micrometre size MTJs with focused ion beam processes is presented. The magnetic properties of the fabricated junctions are investigated in terms of magnetic domain structure, tunnelling magnetoresistance (TMR) and coercivity, with extra attention given to the effect of Ga implantation from the ion beam. In particular, the effect of the implantation on the minimum junction size and the magnetization of the sensing layer are studied. In the latter case, magnetic force microscopy and micromagnetic simulations, with the object-oriented micromagnetic framework (OOMMF), are used to study the magnetization reversal. The fabricated junctions show considerable coercivity both along their hard and easy axes. Interestingly, the sensing layer exhibits two remanent states: one with a single and one with a double domain. The hard axis TMR loop has kinks at about ±20 mT which is attributed to a non-uniform lateral coercivity, where the rim of the junctions, which is subjected to Ga implantation from the flank of the ion beam, is more coercive than the unirradiated centre. The width of the coercive rim is estimated to be 160 nm from the hard axis TMR loop. The easy axis TMR loop shows more coercivity than an unirradiated junction and, this too, is found to stem from the coercive rim, as seen from the simulations. It is concluded that the process scheme has three major advantages. Firstly, it has a high lateral and depth resolution—the depth resolution is enhanced by end point detection—and is capable of making junctions of sizes down towards the limit set by the width of the irradiated rim. Secondly, the most delicate process steps are performed in the unbroken vacuum enabling the use of materials prone to

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

Energy Technology Data Exchange (ETDEWEB)

Normand, P. E-mail: p.normand@imel.demokritos.gr; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M

2004-02-01

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

International Nuclear Information System (INIS)

Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

2004-01-01

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications

Output characteristics of piezoelectric lead zirconate titanate detector using high-energy heavy-ion beam

International Nuclear Information System (INIS)

Takechi, Seiji; Sekiguchi, Masahiro; Miyachi, Takashi; Kobayashi, Masanori; Hattori, Maki; Okudaira, Osamu; Shibata, Hiromi; Fujii, Masayuki; Okada, Nagaya; Murakami, Takeshi; Uchihori, Yukio

2014-01-01

A radiation detector fabricated using piezoelectric lead zirconate titanate (PZT) has been studied by irradiating it with a 400 MeV/n xenon (Xe) beam. The beam diameter was controlled to change the irradiation conditions. It was found that the magnitude of the output observed from the PZT detector may be related to the number of Xe ions per unit area per unit time within the limits of the experimental conditions. -- Highlights: • The performance of PZT detector was studied by irradiation of a 400 MeV/n Xe beam. • The beam diameter was controlled to change the irradiation conditions. • By the control, the number of Xe ions per one pulse was changed from ∼500 to ∼1500. • The output of the PZT detector was not always larger with more intense beam. • The energy of Xe ions per unit area per unit time may determine the output

An ion-beam-assisted process for high-Tc Josephson junctions

International Nuclear Information System (INIS)

Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

1997-01-01

We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T c ) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa 2 Cu 3 O 7 (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I - V characteristics. The well-defined Shapiro steps have been seen on the I - V curves under microwave radiation. The magnetic modulation of critical current of a 4 μm width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 μV at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0x10 -4 G. copyright 1997 American Institute of Physics

Control of colliding ion beams

International Nuclear Information System (INIS)

Salisbury, W.W.

1985-01-01

This invention relates to a method and system for enhancing the power-producing capability of a nuclear fusion reactor, and more specifically to methods and structure for enhancing the ion density in a directed particle fusion reactor. In accordance with the invention, oppositely directed ion beams constrained to helical paths pass through an annular reaction zone. The object is to produce fusion reactions due to collisions between the ion beams. The reaction zone is an annulus as between an inner-cylindrical electrode and an outer-cylindrical coaxial electrode. The beams are enhanced in ion density at spaced points along the paths by providing spline structures protruding from the walls of the electrodes into the reaction zone. This structure causes variations in the electric field along the paths followed by the ion beams. Such fields cause the beams to be successively more and less concentrated as the beams traverse the reaction zone. Points of high concentration are the points at which fusion-producing collisions are most likely to take place

Ion beam enhancement in magnetically insulated ion diodes for high-intensity pulsed ion beam generation in non-relativistic mode

Energy Technology Data Exchange (ETDEWEB)

Zhu, X. P. [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Zhang, Z. C.; Lei, M. K., E-mail: surfeng@dlut.edu.cn [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Pushkarev, A. I. [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Laboratory of Beam and Plasma Technology, High Technologies Physics Institute, Tomsk Polytechnic University, 30, Lenin Ave, 634050 Tomsk (Russian Federation)

2016-01-15

High-intensity pulsed ion beam (HIPIB) with ion current density above Child-Langmuir limit is achieved by extracting ion beam from anode plasma of ion diodes with suppressing electron flow under magnetic field insulation. It was theoretically estimated that with increasing the magnetic field, a maximal value of ion current density may reach nearly 3 times that of Child-Langmuir limit in a non-relativistic mode and close to 6 times in a highly relativistic mode. In this study, the behavior of ion beam enhancement by magnetic insulation is systematically investigated in three types of magnetically insulated ion diodes (MIDs) with passive anode, taking into account the anode plasma generation process on the anode surface. A maximal enhancement factor higher than 6 over the Child-Langmuir limit can be obtained in the non-relativistic mode with accelerating voltage of 200–300 kV. The MIDs differ in two anode plasma formation mechanisms, i.e., surface flashover of a dielectric coating on the anode and explosive emission of electrons from the anode, as well as in two insulation modes of external-magnetic field and self-magnetic field with either non-closed or closed drift of electrons in the anode-cathode (A-K) gap, respectively. Combined with ion current density measurement, energy density characterization is employed to resolve the spatial distribution of energy density before focusing for exploring the ion beam generation process. Consistent results are obtained on three types of MIDs concerning control of neutralizing electron flows for the space charge of ions where the high ion beam enhancement is determined by effective electron neutralization in the A-K gap, while the HIPIB composition of different ion species downstream from the diode may be considerably affected by the ion beam neutralization during propagation.

Electron beam based transversal profile measurements of intense ion beams

International Nuclear Information System (INIS)

El Moussati, Said

2014-01-01

A non-invasive diagnostic method for the experimental determination of the transverse profile of an intense ion beam has been developed and investigated theoretically as well as experimentally within the framework of the present work. The method is based on the deflection of electrons when passing the electromagnetic field of an ion beam. To achieve this an electron beam is employed with a specifically prepared transversal profile. This distinguish this method from similar ones which use thin electron beams for scanning the electromagnetic field [Roy et al. 2005; Blockland10]. The diagnostic method presented in this work will be subsequently called ''Electron-Beam-Imaging'' (EBI). First of all the influence of the electromagnetic field of the ion beam on the electrons has been theoretically analyzed. It was found that the magnetic field causes only a shift of the electrons along the ion beam axis, while the electric field only causes a shift in a plane transverse to the ion beam. Moreover, in the non-relativistic case the magnetic force is significantly smaller than the Coulomb one and the electrons suffer due to the magnetic field just a shift and continue to move parallel to their initial trajectory. Under the influence of the electric field, the electrons move away from the ion beam axis, their resulting trajectory shows a specific angle compared to the original direction. This deflection angle practically depends just on the electric field of the ion beam. Thus the magnetic field has been neglected when analysing the experimental data. The theoretical model provides a relationship between the deflection angle of the electrons and the charge distribution in the cross section of the ion beam. The model however only can be applied for small deflection angles. This implies a relationship between the line-charge density of the ion beam and the initial kinetic energy of the electrons. Numerical investigations have been carried out to clarify the

Friction of self-lubricating surfaces by ion beam techniques. Final technical report

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.S.; Rai, A.K.

1992-05-01

UES, Inc. conducted a research and development program designed to establish conditions for ion implantation/mixing of suitable additives into the surfaces of bulk ceramics and metals for obtaining self-lubricating low friction and wear characteristics. The substrates considered were ZrO{sub 2}, Al{sub 2}O{sub 3}, Si{sub 3}N{sub 4}, steel and Ni-base superalloy. The lubricant additives chosen were BaF{sub 2}/CaF{sub 2}Ag, MoS{sub 2}, WS{sub 2}and B{sub 2}O{sub 3}. The initial tasks of the program were to synthesis these lubricant compounds by co-implantation of constituent elements if sufficient beams of desired elements were obtained. The final tasks were to investigate high energy (MeV) ion mixing of deposited coatings as well as to investigate ion beam assisted deposition using low energy ion beams. It was shown that MoS{sub 2} can be synthesized by co-implantation of Mo{sup +} and S{sup +} in ceramic materials with appropriate choice of energies to obtain nearly overlapping depth profiles. The sliding life of DC magnetron sputtered MoS{sub 2} films of thicknesses {approximately}7500{Angstrom} on ceramic materials such as sapphire, Si{sub 3}N{sub 4} and ZrO{sub 3} were improved by ten to thousand fold after 2 Mev Ag{sup +} ion mixing. Ion beam assisted deposition (IBAD) and ion beam mixing were utilized to fabricate self-lubricating coatings of CaF{sub 2}/Ag and BaF/CaF{sub 2}/Ag composites.

Focused Ion Beam Methods for Research and Control of HEMT Fabrication

Science.gov (United States)

Pevtsov, E. Ph; Bespalov, A. V.; Demenkova, T. A.; Luchnikov, P. A.

2017-04-01

The combination of ion-beam spraying and raster electronic microscopy allows to receive images of sections of defects of the growth nature origin in epitaxial films on GaN basis with nanodimensional permission, to carry out their analysis and classification irrespective of conditions of receiving. Results of application of the specified methods for the analysis of technological operations when forming the microwave transistors are considered: formations of locks, receiving of holes and drawing of contacts.

Ion beams in materials processing and analysis

CERN Document Server

Schmidt, Bernd

2012-01-01

This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.

Nanodevices produced with focussed ion beams

International Nuclear Information System (INIS)

Doetsch, U.; Wieck, A.D.

1998-01-01

In directly writing the 30 nm focus of a focussed Ga-ion beam (FIB) with an energy of 100 keV we define insulating lines in two-dimensional electronic layers in semiconductors. Ga ions act in GaAs and silicon as deep impurities or p-type doping, respectively. In this way the insulation by such written lines is due to lateral depletion within npn-like interfaces. In writing two FIB lines with a close spacing we define conducting channels between them. In applying a voltage of several Volts to the adjacent areas of the channel relative to it we can tune the effective width of the channel in the range of a few 100 nm to zero and obtain thus a one-dimensional field-effect-transistor-type structure. This transistor exhibits a pure lateral field effect and is thus topologically very different to current transistor concepts. Due to its particular geometry it is called in-plane-gate (IPG) transistor, since the gate and the channel are in the same plane. The fabrication of this type of transistor is thus completely maskless and does not require any alignment procedures since gate, source and drain are all written in the same writing process. Due to the computer-control of the beam deflection even more complex structures are just a question of software and do not need a set of specific masks or photoresist like in the classical lithography. The required line ion dose is of the order of 10 6 cm -1 which means that there are about 100 ions per μm implanted. For devices with maximum micron dimensions only a few hundred ions need thus to be implanted. (orig.)

Heavy ion beams from the new Hungarian ECR ion source

International Nuclear Information System (INIS)

Biri, S.; Valek, A.; Ditroi, F.; Koivisto, H.; Arje, J.; Stiebing, K.; Schmidt, L.

1998-01-01

The first beams of highly charged ions in Hungary were obtained in fall of 1996. The new 14.5 GHz ECR ion source of ATOMKI produced beams of multiply charged ions with remarkable intensities at first experiments. Since then, numerous further developments were carried out. An external electrondonor electrode drastically increased the plasma density and, consequently, the intensity of highly charged ions. These upgrades concentrated mainly on beams from gaseous elements and were carried out by the ECRIS team of ATOMKI. Another series of experiments - ionising from solids - however, was done in the framework of an international collaboration. The first metal ion beam has been extracted from the ECRIS in November 1997 using the known method of Metal Ions from Volatile Compounds (MIVOC). The possibility to put the MIVOC chamber inside the ion source was also tested and the dosing regulation problem of metal vapours inside the ion source was solved. As a result, beams of more than 10 μA of highly charged Fe and Ni ions were produced. (author)

Mechanical properties of micro-sized copper bending beams machined by the focused ion beam technique

International Nuclear Information System (INIS)

Motz, C.; Schoeberl, T.; Pippan, R.

2005-01-01

Micro-sized bending beams with thicknesses, t, from 7.5 down to 1.0 μm were fabricated with the focused ion beam technique from a copper single crystal with an {1 1 1} orientation. The beams were loaded with a nano-indenter and the force vs. displacement curves were recorded. A strong size effect was found where the flow stress reaches almost 1 GPa for the thinnest beams. A common strain gradient plasticity approach was used to explain the size effect. However, the strong t -1.14 dependence of the flow stress could not be explained by this model. Additionally, the combination of two other dislocation mechanisms is discussed: the limitation of available dislocation sources and a dislocation pile-up at the beam centre. The contribution of the pile-up stress to the flow stress gives a t -1 dependence, which is in good agreement with the experimental results

Intense non-relativistic cesium ion beam

International Nuclear Information System (INIS)

Lampel, M.C.

1984-02-01

The Heavy Ion Fusion group at Lawrence Berkeley Laboratory has constructed the One Ampere Cesium Injector as a proof of principle source to supply an induction linac with a high charge density and high brightness ion beam. This is studied here. An electron beam probe was developed as the major diagnostic tool for characterizing ion beam space charge. Electron beam probe data inversion is accomplished with the EBEAM code and a parametrically adjusted model radial charge distribution. The longitudinal charge distribution was not derived, although it is possible to do so. The radial charge distribution that is derived reveals an unexpected halo of trapped electrons surrounding the ion beam. A charge fluid theory of the effect of finite electron temperature on the focusing of neutralized ion beams (Nucl. Fus. 21, 529 (1981)) is applied to the problem of the Cesium beam final focus at the end of the injector. It is shown that the theory's predictions and assumptions are consistent with the experimental data, and that it accounts for the observed ion beam radius of approx. 5 cm, and the electron halo, including the determination of an electron Debye length of approx. 10 cm

Brightness measurement of an electron impact gas ion source for proton beam writing applications

Energy Technology Data Exchange (ETDEWEB)

Liu, N.; Santhana Raman, P. [Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Xu, X.; Pang, R.; Kan, J. A. van, E-mail: phyjavk@nus.edu.sg [Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Khursheed, A. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

2016-02-15

We are developing a high brightness nano-aperture electron impact gas ion source, which can create ion beams from a miniature ionization chamber with relatively small virtual source sizes, typically around 100 nm. A prototype source of this kind was designed and successively micro-fabricated using integrated circuit technology. Experiments to measure source brightness were performed inside a field emission scanning electron microscope. The total output current was measured to be between 200 and 300 pA. The highest estimated reduced brightness was found to be comparable to the injecting focused electron beam reduced brightness. This translates into an ion reduced brightness that is significantly better than that of conventional radio frequency ion sources, currently used in single-ended MeV accelerators.

Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing

International Nuclear Information System (INIS)

Carder, D.A.; Markwitz, A.; Reeves, R.J.; Kennedy, J.; Fang, F.

2013-01-01

Nanocrystals of PbSe have been fabricated in a silicon dioxide matrix by sequential low energy ion implantation followed by an electron beam annealing step. Transmission electron microscopy reveals PbSe nanocrystals with typical sizes between 3 and 10 nm in the sub-surface region. Rutherford Backscattering Spectrometry has been used to study the total atomic retention, as a function of implanted atoms, following annealing. Photoluminescence was observed in various samples, at 4 K, as a broad peak between 1.4 and 2.0 μm, with observation of a dependence of the peak wavelength on annealing temperature. Room temperature photoluminescence was observed for samples with a high retention of implanted atoms, demonstrating the importance of nanocrystal density for achieving ambient temperature emission in these systems

Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system

International Nuclear Information System (INIS)

Ngo, V.V.; Akker, B.; Leung, K.N.; Noh, I.; Scott, K.L.; Wilde, S.

2002-01-01

A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-(micro)m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented

Negative ion beam processes

International Nuclear Information System (INIS)

Hayward, T.D.; Lawrence, G.P.; Bentley, R.F.; Malanify, J.J.; Jackson, J.A.

1975-06-01

Los Alamos Scientific Laboratory fiscal year 1975 work on production of intense, very bright, negative hydrogen (H - ), ion beams and conversion of a high-energy (a few hundred MeV) negative beam into a neutral beam are described. The ion source work has used a cesium charge exchange source that has produced H - ion beams greater than or equal to 10 mA (about a factor of 10 greater than those available 1 yr ago) with a brightness of 1.4 x 10 9 A/m 2 -rad 2 (about 18 times brighter than before). The high-energy, neutral beam production investigations have included measurements of the 800-MeV H - -stripping cross section in hydrogen gas (sigma/sub -10/, tentatively 4 x 10 -19 cm 2 ), 3- to 6-MeV H - -stripping cross sections in a hydrogen plasma (sigma/sub -10/, tentatively 2 to 4 x 10 -16 cm 2 ), and the small-angle scattering that results from stripping an 800-MeV H - ion beam to a neutral (H 0 ) beam in hydrogen gas. These last measurements were interrupted by the Los Alamos Meson Physics Facility shutdown in December 1974, but should be completed early in fiscal year 1976 when the accelerator resumes operation. Small-angle scattering calculations have included hydrogen gas-stripping, plasma-stripping, and photodetachment. Calculations indicate that the root mean square angular spread of a 390-MeV negative triton (T - ) beam stripped in a plasma stripper may be as low as 0.7 μrad

Cornell electron beam ion source

International Nuclear Information System (INIS)

Kostroun, V.O.; Ghanbari, E.; Beebe, E.N.; Janson, S.W.

1981-01-01

An electron beam ion source (EBIS) for the production of low energy, multiply charged ion beams to be used in atomic physics experiments has been designed and constructed. An external high perveance electron gun is used to launch the electron beam into a conventional solenoid. Novel features of the design include a distributed sputter ion pump to create the ultrahigh vacuum environment in the ionization region of the source and microprocessor control of the axial trap voltage supplies

Manufacturing of the full size prototype of the ion source for the ITER neutral beam injector – The SPIDER beam source

Energy Technology Data Exchange (ETDEWEB)

Pavei, Mauro, E-mail: mauro.pavei@igi.cnr.it [Consorzio RFX, C.so Stati Uniti 4, I-35127, Padova (Italy); Boilson, Deirdre [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Bonicelli, Tullio [Fusion for Energy, C/Joseph Pla 2, 08019 Barcelona (Spain); Boury, Jacques [Thales Electron Devices, Velizy Villacoublay (France); Bush, Michael [Galvano-T GmbH, T, Raiffeisenstraße 8, 51570 Windeck (Germany); Ceracchi, Andrea; Faso, Diego [CECOM S.r.l., Via Tiburtina – Guidonia Montecelio, Roma (Italy); Graceffa, Joseph [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Heinemann, Bernd [Max-Planck-Institut für Plasmaphysik, D-85740 Garching (Germany); Hemsworth, Ronald [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Lievin, Christophe [Thales Electron Devices, Velizy Villacoublay (France); Marcuzzi, Diego [Consorzio RFX, C.so Stati Uniti 4, I-35127, Padova (Italy); Masiello, Antonio [Fusion for Energy, C/Joseph Pla 2, 08019 Barcelona (Spain); Sczepaniak, Bernd [Galvano-T GmbH, T, Raiffeisenstraße 8, 51570 Windeck (Germany); Singh, Mahendrajit [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Toigo, Vanni; Zaccaria, Pierluigi [Consorzio RFX, C.so Stati Uniti 4, I-35127, Padova (Italy)

2015-10-15

Highlights: • Negative ion sources are key components of neutral beam injectors for nuclear fusion. • The SPIDER experiment aims to optimize the negative ion source of MITICA and HNB. • The SPIDER Beam Source manufacturing is currently on-going. • Manufacturing and assembling technological issues encountered are presented. - Abstract: In ITER, each heating neutral beam injector (HNB) will deliver about 16.5 MW heating power by accelerating a 40 A deuterium negative ion beam up to the energy of 1 MeV. The ions are generated inside a caesiated negative ion source, where the injected H{sub 2}/D{sub 2} is ionized by a radio frequency electromagnetic field. The SPIDER test bed, currently being manufactured, is going to be the ion source test facility for the full size ion source of the HNBs and of the diagnostic neutral beam injector of ITER. The SPIDER beam source comprises an ion source with 8 radio-frequency drivers and a three-grid system, providing an overall acceleration up to energies of about 100 keV [1]. SPIDER represents a substantial step forward between the half ITER size ion source, which is currently being tested at the ELISE test bed in IPP-Garching, and the negative ion sources to be used on ITER, in terms of layout, dimensions and operating parameters. The SPIDER beam source will be housed inside a vacuum vessel which will be equipped with a beam dump and a graphite diagnostic calorimeter. The manufacturing design of the main parts of the SPIDER beam source has been completed and many of the tests on the prototypes have been successfully passed. The most complex parts, from the manufacturing point of view, of the ion source and the accelerator, developed by galvanic deposition of copper are being manufactured. The manufacturing phase will be completed within 2015, when the assembly of the device will start at the PRIMA site, in Padova (I). The paper describes the status of the procurement, the adaptations operated on the design of the beam

Fabrication and modification of metal nanocluster composites using ion and laser beams

International Nuclear Information System (INIS)

Haglund, R.F. Jr.; Osborne, D.H. Jr.; Magruder, R.H. III; White, C.W.; Zuhr, R.A.; Townsend, P.D.; Hole, D.E.; Leuchtner, R.E.

1994-12-01

Metal nanocluster composites have attractive properties for applications in nonlinear optics. However, traditional fabrication techniques -- using melt-glass substrates -- are severely constrained by equilibrium thermodynamics and kinetics. This paper describes the fabrication of metal nanoclusters in both crystalline and glassy hosts by ion implantation and pulsed laser deposition. The size and size distribution of the metal nanoclusters can be modified by controlling substrate temperature during implantation, by subsequent thermal annealing, or by laser irradiation. The authors have characterized the optical response of the composites by absorption and third-order nonlinear-optical spectroscopies; electron and scanning-probe microscopies have been used to benchmark the physical characteristics of the composites. The outlook for controlling the structure and nonlinear optical response properties of these nanophase materials appears increasingly promising

Design and Fabrication of a Single Cusp Magnetic Field Type Hydrogen ion Source

Energy Technology Data Exchange (ETDEWEB)

Kim, Su Hun

1996-02-15

A single-cusp type hydrogen ion source has been designed and fabricated. In order to increase the efficiency of the plasma production, a single-cusp type magnet circuit and an electrostatic reflector were installed. The Poission Group Code was used to predict the distribution of magnetic field in the plasma chamber. In order to design the accel.-decel. extraction part for forming the ion beam with low emmitance and high current density, EGUN code was used. The results of calculation show that the configuration of plasma electrode strongly affects the beam quality and the deceleration electrode only functions the repression of the electron stream. When the plasma-accel potential is -20kV and an accel.-decel. potential is 1kV, the calculated extraction current, normalized emittance and perveance are 20.6mA, 1.28x 10{sup -7} m {center_dot} rad and 7.87 x 10{sup -9}A {center_dot} V{sup -3/2}, respectively. This study on the improvement of beam quality and the achievement of high ion beam current will contribute to the analysis of fusion plasma and the research on the surface physics.

Design and Fabrication of a Single Cusp Magnetic Field Type Hydrogen ion Source

International Nuclear Information System (INIS)

Kim, Su Hun

1996-02-01

A single-cusp type hydrogen ion source has been designed and fabricated. In order to increase the efficiency of the plasma production, a single-cusp type magnet circuit and an electrostatic reflector were installed. The Poission Group Code was used to predict the distribution of magnetic field in the plasma chamber. In order to design the accel.-decel. extraction part for forming the ion beam with low emmitance and high current density, EGUN code was used. The results of calculation show that the configuration of plasma electrode strongly affects the beam quality and the deceleration electrode only functions the repression of the electron stream. When the plasma-accel potential is -20kV and an accel.-decel. potential is 1kV, the calculated extraction current, normalized emittance and perveance are 20.6mA, 1.28x 10 -7 m · rad and 7.87 x 10 -9 A · V -3/2 , respectively. This study on the improvement of beam quality and the achievement of high ion beam current will contribute to the analysis of fusion plasma and the research on the surface physics

Pseudo ribbon metal ion beam source

International Nuclear Information System (INIS)

Stepanov, Igor B.; Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

2014-01-01

The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface

Pseudo ribbon metal ion beam source.

Science.gov (United States)

Stepanov, Igor B; Ryabchikov, Alexander I; Sivin, Denis O; Verigin, Dan A

2014-02-01

The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

Ion-beam Plasma Neutralization Interaction Images

Energy Technology Data Exchange (ETDEWEB)

Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

2002-04-09

Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented.

Ion-beam Plasma Neutralization Interaction Images

International Nuclear Information System (INIS)

Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

2002-04-01

Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented

Cluster ion beam facilities

International Nuclear Information System (INIS)

Popok, V.N.; Prasalovich, S.V.; Odzhaev, V.B.; Campbell, E.E.B.

2001-01-01

A brief state-of-the-art review in the field of cluster-surface interactions is presented. Ionised cluster beams could become a powerful and versatile tool for the modification and processing of surfaces as an alternative to ion implantation and ion assisted deposition. The main effects of cluster-surface collisions and possible applications of cluster ion beams are discussed. The outlooks of the Cluster Implantation and Deposition Apparatus (CIDA) being developed in Guteborg University are shown

Development of nano-fabrication technique utilizing self-organizational behavior of point defects induced by ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Nitta, Noriko [Department of Environmental Systems Engineering, Kochi University of Technology, Tosayamada-Cho, Kochi-Prefecture 782-8502 (Japan); Taniwaki, Masafumi [Department of Environmental Systems Engineering, Kochi University of Technology, Tosayamada-Cho, Kochi-Prefecture 782-8502 (Japan)]. E-mail: taniwaki.masafumi@kochi-tech.ac.jp

2006-04-01

The present authors proposed a novel nano-fabrication technique that is able to arrange the fine cells orderly, based on their finding in GaSb implanted at a low temperature. In this article, first the experimental results that anomalous cellular structure was formed in GaSb by ion implantation is introduced and the self-organizational formation mechanism of the structure is described. Next a nano-fabrication technique that utilizes focused ion beam is described. This technique consists of two procedures, i.e. the formation process of the voids array and the development of the initial array to ordered cellular structure. Finally, the nano-fabrication is actually performed by this technique and their results are reported. Fabrication succeeded in structures where the dot (cell) interval was 100 nm or larger. The minimum ion dose for initial voids which develops to the ordered cellular structure is evaluated. It is also shown that the substrate temperature during implantation is an essential parameter for this technique.

Development of nano-fabrication technique utilizing self-organizational behavior of point defects induced by ion irradiation

International Nuclear Information System (INIS)

Nitta, Noriko; Taniwaki, Masafumi

2006-01-01

The present authors proposed a novel nano-fabrication technique that is able to arrange the fine cells orderly, based on their finding in GaSb implanted at a low temperature. In this article, first the experimental results that anomalous cellular structure was formed in GaSb by ion implantation is introduced and the self-organizational formation mechanism of the structure is described. Next a nano-fabrication technique that utilizes focused ion beam is described. This technique consists of two procedures, i.e. the formation process of the voids array and the development of the initial array to ordered cellular structure. Finally, the nano-fabrication is actually performed by this technique and their results are reported. Fabrication succeeded in structures where the dot (cell) interval was 100 nm or larger. The minimum ion dose for initial voids which develops to the ordered cellular structure is evaluated. It is also shown that the substrate temperature during implantation is an essential parameter for this technique

An electron cyclotron resonance ion source based low energy ion beam platform

International Nuclear Information System (INIS)

Sun, L. T.; Shang, Y.; Ma, B. H.; Zhang, X. Z.; Feng, Y. C.; Li, X. X.; Wang, H.; Guo, X. H.; Song, M. T.; Zhao, H. Y.; Zhang, Z. M.; Zhao, H. W.; Xie, D. Z.

2008-01-01

To satisfy the requirements of surface and atomic physics study in the field of low energy multiple charge state ion incident experiments, a low energy (10 eV/q-20 keV/q) ion beam platform is under design at IMP. A simple test bench has been set up to test the ion beam deceleration systems. Considering virtues such as structure simplicity, easy handling, compactness, cost saving, etc., an all-permanent magnet ECRIS LAPECR1 [Lanzhou all-permanent magnet electron cyclotron resonance (ECR) ion source No. 1] working at 14.5 GHz has been adopted to produce intense medium and low charge state ion beams. LAPECR1 source has already been ignited. Some intense low charge state ion beams have been produced on it, but the first test also reveals that many problems are existing on the ion beam transmission line. The ion beam transmission mismatches result in the depressed performance of LAPECR1, which will be discussed in this paper. To obtain ultralow energy ion beam, after being analyzed by a double-focusing analyzer magnet, the selected ion beam will be further decelerated by two afocal deceleration lens systems, which is still under design. This design has taken into consideration both ions slowing down and also ion beam focusing. In this paper, the conceptual design of deceleration system will be discussed

An electron cyclotron resonance ion source based low energy ion beam platform.

Science.gov (United States)

Sun, L T; Shang, Y; Ma, B H; Zhang, X Z; Feng, Y C; Li, X X; Wang, H; Guo, X H; Song, M T; Zhao, H Y; Zhang, Z M; Zhao, H W; Xie, D Z

2008-02-01

To satisfy the requirements of surface and atomic physics study in the field of low energy multiple charge state ion incident experiments, a low energy (10 eV/q-20 keV/q) ion beam platform is under design at IMP. A simple test bench has been set up to test the ion beam deceleration systems. Considering virtues such as structure simplicity, easy handling, compactness, cost saving, etc., an all-permanent magnet ECRIS LAPECR1 [Lanzhou all-permanent magnet electron cyclotron resonance (ECR) ion source No. 1] working at 14.5 GHz has been adopted to produce intense medium and low charge state ion beams. LAPECR1 source has already been ignited. Some intense low charge state ion beams have been produced on it, but the first test also reveals that many problems are existing on the ion beam transmission line. The ion beam transmission mismatches result in the depressed performance of LAPECR1, which will be discussed in this paper. To obtain ultralow energy ion beam, after being analyzed by a double-focusing analyzer magnet, the selected ion beam will be further decelerated by two afocal deceleration lens systems, which is still under design. This design has taken into consideration both ions slowing down and also ion beam focusing. In this paper, the conceptual design of deceleration system will be discussed.

Broad beam ion sources and some surface processes

International Nuclear Information System (INIS)

Neumann, H.; Scholze, F.; Tarz, M.; Schindler, A.; Wiese, R.; Nestler, M.; Blum, T.

2005-01-01

Modern broad-beam multi-aperture ion sources are widely used in material and surface technology applications. Customizing the generated ion beam properties (i. e. the ion current density profile) for specific demands of the application is a main challenge in the improvement of the ion beam technologies. First we introduce ion sources based on different plasma excitation principles shortly. An overview of source plasma and ion beam measurement methods deliver input data for modelling methods. This beam profile modelling using numerical trajectory codes and the validation of the results by Faraday cup measurements as a basis for ion beam profile design are described. Furthermore possibilities for ex situ and in situ beam profile control are demonstrated, like a special method for in situ control of a linear ion source beam profile, a grid modification for circular beam profile design and a cluster principle for broad beam sources. By means of these methods, the beam shape may be adapted to specific technological demands. Examples of broad beam source application in ion beam figuring of optical surfaces, modification of stainless steel, photo voltaic processes and deposition of EUVL-multilayer stacks are finally presented. (Author)

Cooling of molecular ion beams

International Nuclear Information System (INIS)

Wolf, A.; Krohn, S.; Kreckel, H.; Lammich, L.; Lange, M.; Strasser, D.; Grieser, M.; Schwalm, D.; Zajfman, D.

2004-01-01

An overview of the use of stored ion beams and phase space cooling (electron cooling) is given for the field of molecular physics. Emphasis is given to interactions between molecular ions and electrons studied in the electron cooler: dissociative recombination and, for internally excited molecular ions, electron-induced ro-vibrational cooling. Diagnostic methods for the transverse ion beam properties and for the internal excitation of the molecular ions are discussed, and results for phase space cooling and internal (vibrational) cooling are presented for hydrogen molecular ions

Space-charge compensation of highly charged ion beam from laser ion source

International Nuclear Information System (INIS)

Kondrashev, S.A.; Collier, J.; Sherwood, T.R.

1996-01-01

The problem of matching an ion beam delivered by a high-intensity ion source with an accelerator is considered. The experimental results of highly charged ion beam transport with space-charge compensation by electrons are presented. A tungsten thermionic cathode is used as a source of electrons for beam compensation. An increase of ion beam current density by a factor of 25 is obtained as a result of space-charge compensation at a distance of 3 m from the extraction system. The process of ion beam space-charge compensation, requirements for a source of electrons, and the influence of recombination losses in a space-charge-compensated ion beam are discussed. (author)

Ion-beam nanopatterning: experimental results with chemically-assisted beam

Science.gov (United States)

Pochon, Sebastien C. R.

2018-03-01

The need for forming gratings (for example used in VR headsets) in materials such as SiO2 has seen a recent surge in the use of Ion beam etching techniques. However, when using an argon-only beam, the selectivity is limited as it is a physical process. Typically, gases such as CHF3, SF6, O2 and Cl2 can be added to argon in order to increase selectivity; depending on where the gas is injected, the process is known as Reactive Ion Beam Etching (RIBE) or Chemically Assisted Ion Beam Etching (CAIBE). The substrate holder can rotate in order to provide an axisymmetric etch rate profile. It can also be tilted over a range of angles to the beam direction. This enables control over the sidewall profile as well as radial uniformity optimisation. Ion beam directionality in conjunction with variable incident beam angle via platen angle setting enables profile control and feature shaping during nanopatterning. These hardware features unique to the Ion Beam etching methods can be used to create angled etch features. The CAIBE technique is also well suited to laser diode facet etch (for optoelectronic devices); these typically use III-V materials like InP. Here, we report on materials such as SiO2 etched without rotation and at a fixed platen angle allowing the formation of gratings and InP etched at a fixed angle with rotation allowing the formation of nanopillars and laser facets.

Production of ion beam by conical pinched electron beam diode

International Nuclear Information System (INIS)

Matsukawa, Y.; Nakagawa, Y.

1982-01-01

Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)

Diffuse ions produced by electromagnetic ion beam instabilities

International Nuclear Information System (INIS)

Winske, D.; Leroy, M.M.

1984-01-01

The evolution of the electromagnetic ions beam instability driven by the reflected ion component backstreaming away from the earth's how shock into the foreshock region is studied by means computer simulation. The linear the quasi-linear states of the instability are found to be in good agreement with known results for the resonant model propagating parallel to the beam along the magnetic field and with theory developed in this paper for the nonresonant mode, which propagates antiparallel to the beam direction. The quasi-linear stage, which produces large amplitude 8Bapprox.B, sinusoidal transverse waves and ''intermediate'' ion distribution, is terminated by a nonlinear phase in which strongly nonlinear, compressive waves and ''diffuse'' ion distributions are produced. Additional processes by which the diffuse ions are accelerated to observed high energies are not addressed. The results are discussed in terms of the ion distributions and hydromagnetic waves observed in the foreshock of the earth's bow shock and of interplanetary shocks

Large area ion and plasma beam sources

Energy Technology Data Exchange (ETDEWEB)

Waldorf, J. [IPT Ionen- und Plasmatech. GmbH, Kaiserslautern (Germany)

1996-06-01

In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.).

Large area ion and plasma beam sources

International Nuclear Information System (INIS)

Waldorf, J.

1996-01-01

In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.)

Study on the cathode of ion source for neutral beam injector

International Nuclear Information System (INIS)

Tanaka, Shigeru

1983-08-01

Durability of the cathode is an important problem in developing a high power long pulse ion source for neutral beam injector. The Purpose of this study is to develope a long life cathode and investigate the applicability of it to the source. Directly heated filaments which are commonly used as the cathode of injector source do not live very long in general. In the present work, an indirectly heated hollow cathode made of impregnated porous tungsten tube is proposed as the alternative of the directly heated cathode. At first, we fabricated a small hollow cathode to study the discharge characteristcs in a bell-jar configuration and to apply it to a duoPIGatron hydrogen ion source. The experiment showed that the gas flow rate for sustaining the stable arc discharge in the discharge chamber becomes higher than that when the filament cathode is used. To solve this problem, an experiment for gas reduction was made using a newly fabricated larger hollow cathode and a magnetic multi-pole ion source. The influence of the orifice diameter, the effect of a button and of magnetic field on the gas flow rate were experimentally studied and a method for gas reduction was found. In addition, effect of the magnetic field on the characteristics of the hollow cathode ion source was examined in detail and an optimum field configuration around the cathode was found. Finally, beam extraction from an intensively cooled hollow cathode ion source for up to 10 sec was successfully carried out. (author)

Focussed MeV ion beam implanted waveguides

Energy Technology Data Exchange (ETDEWEB)

Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

Focussed MeV ion beam implanted waveguides

Energy Technology Data Exchange (ETDEWEB)

Von Bibra, M L; Roberts, A; Nugent, K; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

Development of the High Current Ion Source for Neutral Beam Injection

Energy Technology Data Exchange (ETDEWEB)

Lee, Hun Ju; Kim, S. H.; Jang, D. H. [Jae Ju University, Jaeju (Korea, Republic of)

1997-08-01

The scope of the 1st year research is to design an 140keV deuterium ion source which has a beam current of 30-40A. According to the collected data, the model of an ion source for NBI of KSTAR was established. The negative ion source, which has good neutralization effecting in high energy, was selected. To generate a plasma, the thoriated tungsten filament was adopted. To increase the efficiency of plasma, the multi cusp type magnetic field was attached. The magnetic field was calculated by POISSON code. The extraction structure was designed with EGUN code, to extract the high quality ion beam. The design of a high current ion source for NBI was carried out. To develop the high current ion source with the high operational stability and the long lifetime, the parameters including an arc current, gas pressure and extraction voltage should be optimized. If designed ion source would be fabricated, its parameters could be optimized experimentally. Through the optimization of the ion source parameter, the core technology for NBI is established and the experiment of current drive in the fusion device can be performed. This technology also can be applied to the synthesis of new material and semiconductor industry. 18 refs., 11 tabs., 19 figs. (author)

Ion-beam texturing of uniaxially textured Ni films

International Nuclear Information System (INIS)

Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

2005-01-01

The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth

Beam losses in heavy ion drivers

CERN Document Server

Mustafin, E R; Hofmann, I; Spiller, P J

2002-01-01

While beam loss issues have hardly been considered in detail for heavy ion fusion scenarios, recent heavy ion machine developments in different labs (European Organization for Nuclear Research (CERN), Gesellschaft fur Schwerionenforschung (GSI), Institute for Theoretical and Experimental Physics (ITEP), Relativistic Heavy-Ion Collider (RHIC)) have shown the great importance of beam current limitations due to ion losses. Two aspects of beam losses in heavy ion accelerators are theoretically considered: (1) secondary neutron production due to lost ions, and (2) vacuum pressure instability due to charge exchange losses. Calculations are compared and found to be in good agreement with measured data. The application to a Heavy-Ion Driven Inertial Fusion (HIDIF) scenario is discussed. 12 Refs.

Ion Beam Extraction by Discrete Ion Focusing

DEFF Research Database (Denmark)

2010-01-01

An apparatus (900) and methods are disclosed for ion beam extraction. In an implementation, the apparatus includes a plasma source (or plasma) (802) and an ion extractor (804). The plasma source is adapted to generate ions and the ion extractor is immersed in the plasma source to extract a fracti...

ECR ion source based low energy ion beam facility

Indian Academy of Sciences (India)

Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion ...

Intense pulsed heavy ion beam technology

International Nuclear Information System (INIS)

Masugata, Katsumi; Ito, Hiroaki

2010-01-01

Development of intense pulsed heavy ion beam accelerator technology is described for the application of materials processing. Gas puff plasma gun and vacuum arc discharge plasma gun were developed as an active ion source for magnetically insulated pulsed ion diode. Source plasma of nitrogen and aluminum were successfully produced with the gas puff plasma gun and the vacuum arc plasma gun, respectively. The ion diode was successfully operated with gas puff plasma gun at diode voltage 190 kV, diode current 2.2 kA and nitrogen ion beam of ion current density 27 A/cm 2 was obtained. The ion composition was evaluated by a Thomson parabola spectrometer and the purity of the nitrogen ion beam was estimated to be 86%. The diode also operated with aluminum ion source of vacuum arc plasma gun. The ion diode was operated at 200 kV, 12 kA, and aluminum ion beam of current density 230 A/cm 2 was obtained. The beam consists of aluminum ions (Al (1-3)+ ) of energy 60-400 keV, and protons (90-130 keV), and the purity was estimated to be 89%. The development of the bipolar pulse accelerator (BPA) was reported. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. The generator was tested with dummy load of 7.5 ohm, bipolar pulses of -138 kV, 72 ns (1st pulse) and +130 kV, 70 ns (2nd pulse) were successively generated. By applying the bipolar pulse to the drift tube of the BPA, nitrogen ion beam of 2 A/cm 2 was observed in the cathode, which suggests the bipolar pulse acceleration. (author)

Consideration of beam plasma ion-source

International Nuclear Information System (INIS)

Sano, Fumimichi; Kusano, Norimasa; Ishida, Yoshihiro; Ishikawa, Junzo; Takagi, Toshinori

1976-01-01

Theoretical and experimental analyses and their comparison were made on the plasma generation and on the beam extraction for the beam plasma ion-source. The operational principle and the structure of the ion-source are explained in the first part. Considerations are given on the electron beam-plasma interaction and the resulting generation of high frequency or microwaves which in turn increases the plasma density. The flow of energy in this system is also explained in the second part. The relation between plasma density and the imaginary part of frequency is given by taking the magnetic flux density, the electron beam energy, and the electron beam current as parameters. The relations between the potential difference between collector and drift tube and the plasma density or the ion-current are also given. Considerations are also given to the change of the plasma density due to the change of the magnetic flux density at drift tube, the change of the electron beam energy, and the change of the electron beam current. The third part deals with the extraction characteristics of the ion beam. The structure of the multiple-aperture electrode and the relation between plasma density and the extracted ion current are explained. (Aoki, K.)

Modified betatron for ion beam fusion

International Nuclear Information System (INIS)

Rostoker, N.; Fisher, A.

1986-01-01

An intense neutralized ion beam can be injected and trapped in magnetic mirror or tokamak geometry. The details of the process involve beam polarization so that the beam crosses the fringing fields without deflection and draining the polarization when the beam reaches the plasma. Equilibrium requires that a large betatron field be added in tokamak geometry. In mirror geometry a toroidal field must be added by means of a current along the mirror axis. In either case, the geometry becomes that of the modified betatron which has been studied experimentally and theoretically in recent years. We consider beams of d and t ions with a mean energy of 500 kev and a temperature of about 50 kev. The plasma may be a proton plasma with cold ions. It is only necessary for beam trapping or to carry currents. The ion energy for slowing down is initially 500 kev and thermonuclear reactions depend only on the beam temperature of 50 kev which changes very slowly. This new configuration for magnetic confinement fusion leads to an energy gain of 10--20 for d-t reactions whereas previous studies of beam target interaction predicted a maximum energy gain of 3--4. The high beam energy available with pulsed ion diode technology is also essential for advanced fuels. 16 refs., 3 figs

Realization of synaptic learning and memory functions in Y2O3 based memristive device fabricated by dual ion beam sputtering

Science.gov (United States)

Das, Mangal; Kumar, Amitesh; Singh, Rohit; Than Htay, Myo; Mukherjee, Shaibal

2018-02-01

Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous Y2O3 (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and ‘learning behavior (LB)’ are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An ‘LB’ function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective MIS structure would promote much cheaper synapse for artificial neural network.

Development of the Holifield Radioactive Ion Beam Facility

International Nuclear Information System (INIS)

Tatum, B.A.

1997-01-01

The Holifield Radioactive Ion Beam Facility (HRIBF) construction project has been completed and the first radioactive ion beam has been successfully accelerated. The project, which began in 1992, has involved numerous facility modifications. The Oak Ridge Isochronous Cyclotron has been converted from an energy booster for heavy ion beams to a light ion accelerator with internal ion source. A target-ion source and mass analysis system have been commissioned as key components of the facility's radioactive ion beam injector to the 25MV tandem electrostatic accelerator. Beam transport lines have been completed, and new diagnostics for very low intensity beams have been developed. Work continues on a unified control system. Development of research quality radioactive beams for the nuclear structure and nuclear astrophysics communities continues. This paper details facility development to date

Space-qualified optical thin films by ion-beam-assisted deposition

International Nuclear Information System (INIS)

Hsiao, C.N.; Chen, H.P.; Chiu, P.K.; Lin, Y.W.; Chen, F.Z.; Tsai, D.P.

2013-01-01

Optical interference coatings designed for use in a space-grade multispectral assembly in a complementary metal-oxide‐semiconductor sensor were deposited on glass by ion-beam-assisted deposition for a Cassegrain-type space-based remote-sensing platform. The patterned multispectral assembly containing blue, green, red, near infrared, and panchromatic multilayer high/low alternated dielectric band-pass filter arrays in a single chip was fabricated by a mechanical mask and the photolithography process. The corresponding properties of the films were investigated by in situ optical monitoring and spectrometry. It was found that the optical properties were significantly improved by employing ion-beam-assisted deposition. The average transmittances were above 88% for the multispectral assembly, with a rejection transmittance of less than 1% in the spectral range 350–1100 nm. To estimate the optical stability of optical coatings for aerospace applications, a space environment assuming a satellite orbiting the Earth at an altitude of near 800 km was simulated by a Co 60 gamma (γ) radiation test. - Highlights: ►Parameters of optical filters were optimized by using admittance loci analysis. ►Higher index of refraction of films prepared by ion beam assisted deposition. ►The dielectric filters have acceptable resistance after γ radiation exposure

Generation and focusing of intense ion beams with an inverse pinch ion diode

International Nuclear Information System (INIS)

Hashimoto, Yoshiyuki; Sato, Morihiko; Yatsuzuka, Mitsuyasu; Nobuhara, Sadao

1992-01-01

Generation and focusing of ion beams using an inverse pinch ion diode with a flat anode has been studied. The ion beams generated with the inverse pinch ion diode were found to be focused at 120 mm from the anode by the electrostatic field in the diode. The energy and maximum current density of the ion beams were 180 keV and 420 A/cm 2 , respectively. The focusing angle of the ion beams was 4.3deg. The beam brightness was estimated to be 1.3 GW/cm 2 ·rad 2 . The focusing distance of the ion beams was found to be controllable by changing the diameters of the anode and cathode. (author)

Applications of ion beam analysis workshop. Workshop handbook

International Nuclear Information System (INIS)

1995-01-01

A workshop on applications of ion beam analysis was held at ANSTO, immediate prior to the IBMM-95 Conference in Canberra. It aims was to review developments and current status on use of ion beams for analysis, emphasizing the following aspects: fundamental ion beam research and secondary effects of ion beams; material sciences, geological, life sciences, environmental and industrial applications; computing codes for use in accelerator research; high energy heavy ion scattering and recoil; recent technological development using ion beams. The handbook contains the workshop's program, 29 abstracts and a list of participants

Cooled heavy ion beams at the ESR

International Nuclear Information System (INIS)

Steck, M.; Beckert, K.; Bosch, F.; Eickhoff, H.; Franzke, B.; Klepper, O.; Nolden, F.; Reich, H.; Schlitt, B.; Spaedtke, P.; Winkler, T.

1996-01-01

The storage ring ESR has been used in various operational modes for experiments with electron cooled heavy ion beams. Besides the standard storage mode including injection and beam accumulation the deceleration of highly charged ions has been demonstrated. Beams of highly charged ions have been injected and accumulated and finally decelerated to a minimum energy of 50 MeV/u. An ultraslow extraction method using charge changing processes is now also available for cooled beams of highly charged ions. For in ring experiments the internal gas jet and the cold electron beam of the cooling system are applied as targets. High precision mass spectrometry by Schottky noise detection has been demonstrated. Operation at transition energy has been achieved with cooled beams opening the field for experiments which require an isochronous revolution of the ions. (orig.)

A beam profile monitor for heavy ion beams at high impact energies

International Nuclear Information System (INIS)

Hausmann, A.; Stiebing, K.E.; Bethge, K.; Froehlich, O.; Koehler, E.; Mueller, A.; Rueschmann, G.

1994-01-01

A beam profile monitor for heavy ion beams has been developed for the use in experiments at the Heavy Ion Synchrotron SIS at Gesellschaft fuer Schwerionenforschung Darmstadt (GSI). Four thin scintillation fibres are mounted on one wheel and scan the ion beam sequentially in two linearly independent directions. They are read out via one single photomultiplier common to all four fibres into one time spectrum, which provides all information about beam position, beam extension, time structure and lateral homogeneity of the beam. The system operates in a wide dynamic range of beam intensities. ((orig.))

Intense beams of light ions

International Nuclear Information System (INIS)

Camarcat, Noel

1985-01-01

Results of experiments performed in order to accelerate intense beams of light and heavier ions are presented. The accelerating diodes are driven by existing pulsed power generators. Optimization of the generator structure is described in chapter I. Nuclear diagnostics of the accelerated light ion beams are presented in chapter II. Chapter III deals with the physics of intense charged particle beams. The models developed are applied to the calculation of the performances of the ion diodes described in the previous chapters. Chapter IV reports preliminary results on a multiply ionized carbon source driven by a 0.1 TW pulsed power generator. (author) [fr

Constraints on ion beam handling for intersecting beam experiments

International Nuclear Information System (INIS)

Kruse, T.

1981-01-01

The intense synchrotron radiation beams from the NSLS uv or x-ray storage rings still do not compare in monochromatized photon flux with a laser beam, a fact which becomes apparent in considering reaction rates for interaction of photon and ion beams. There are two prototypical interaction geometries, parallel and perpendicular. Calculations should properly be done in the rest frame of the ion beam; however, expected beta values are small, so the lab frame will be employed and aberration and Doppler shift effects neglected

Measurement of ultra-low ion energy of decelerated ion beam using a deflecting electric field

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2015-12-15

In investigation on ultra-low-energy ion bombardment effect on DNA, an ion beam deceleration lens was developed for high-quality ultra-low-energy ion beam. Measurement of the ion energy after deceleration was necessary to confirm the ion beam really decelerated as theoretically predicted. In contrast to conventional methods, this work used a simple deflecting electrostatic field after the deceleration lens to bend the ion beam. The beam bending distance depended on the ion energy and was described and simulated. A system for the measurement of the ion beam energy was constructed. It consisted of a pair of parallel electrode plates to generate the deflecting electrical field, a copper rod measurement piece to detect ion beam current, a vernier caliper to mark the beam position, a stepping motor to translate the measurement rod, and a webcam-camera to read the beam bending distance. The entire system was installed after the ion-beam deceleration lens inside the large chamber of the bioengineering vertical ion beam line. Moving the measurement rod across the decelerated ion beam enabled to obtain beam profiles, from which the beam bending distance could be known and the ion beam energy could be calculated. The measurement results were in good agreement with theoretical and simulated results.

TUTORIAL: Focused-ion-beam-based rapid prototyping of nanoscale magnetic devices

Science.gov (United States)

Khizroev, S.; Litvinov, D.

2004-03-01

In this tutorial, focused-ion-beam (FIB)-based fabrication is considered from a very unconventional angle. FIB is considered not as a fabrication tool that can be used for mass production of electronic devices, similar to optical and E-beam—based lithography, but rather as a powerful tool to rapidly fabricate individual nanoscale magnetic devices for prototyping future electronic applications. Among the effects of FIB-based fabrication of magnetic devices, the influence of Ga+-ion implantation on magnetic properties is presented. With help of magnetic force microscopy (MFM), it is shown that there is a critical doze of ions that a magnetic material can be exposed to without experiencing a change in the magnetic properties. Exploiting FIB from such an unconventional perspective is especially favourable today when the future of so many novel technologies depends on the ability to rapidly fabricate prototype nanoscale magnetic devices. As one of the most illustrative examples, the multi-billion-dollar data storage industry is analysed as the technology field that strongly benefited from implementing FIB in the above-described role. The essential role of FIB in the most recent trend of the industry towards perpendicular magnetic recording is presented. Moreover, other emerging and fast-growing technologies are considered as examples of nanoscale technologies whose future could strongly depend on the implementation of FIB in the role of a nanoscale fabrication tool for rapid prototyping. Among the other described technologies are 'ballistic' magnetoresistance, patterned magnetic media, magnetoresistive RAM (MRAM), and magnetic force microscopy.

Ion beam analysis

International Nuclear Information System (INIS)

Bethge, K.

1995-01-01

Full text: Ion beam analysis is an accelerator application area for the study of materials and the structure of matter; electrostatic accelerators of the Van de Graaff or Dynamitron type are often used for energies up to a few MeV. Two types of machines are available - the single-ended accelerator type with higher beam currents and greater flexibility of beam management, or the tandem accelerator, limited to atomic species with negative ions. The accelerators are not generally installed at specialist accelerator laboratories and have to be easy to maintain and simple to operate. The most common technique for industrial research is Rutherford Back Scattering Spectrometry (RBS). Helium ions are the preferred projectiles, since at elevated energies (above 3 MeV) nuclear resonance scattering can be used to detect photons associated with target molecules containing elements such as carbon, nitrogen or oxygen. Due to the large amount of available data on nuclear reactions in this energy range, activation analysis (detecting trace elements by irradiating the sample) can be performed with charged particles from accelerators over a wider range of atoms than with the conventional use of neutrons, which is more suited to light elements. Resonance reactions have been used to detect trace metals such as aluminium, titanium and vanadium. Hydrogen atoms are vital to the material performance of several classes of materials, such as semiconductors, insulators and ceramics. Prudent selection of the projectile ion aids the analysis of hydrogen composition; the technique is then a simple measurement of the emitted gamma radiation. Solar cell material and glass can be analysed in this way. On a world-wide basis, numerous laboratories perform ion beam analysis for research purposes; considerable work is carried out in cooperation between scientific laboratories and industry, but only a few laboratories provide a completely commercial service

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

Intense ion beams for inertial confinement fusion

International Nuclear Information System (INIS)

Mehlhorn, T.A.

1997-01-01

Intense beams of light of heavy ions are being studied as inertial confinement fusion (ICF) drivers for high yield and energy. Heavy and light ions have common interests in beam transport, targets, and alternative accelerators. Self-pinched transport is being jointly studied. This article reviews the development of intense ion beams for ICF. Light-ion drivers are highlighted because they are compact, modular, efficient and low cost. Issues facing light ions are: (1) decreasing beam divergence; (2) increasing beam brightness; and (3) demonstrating self-pinched transport. Applied-B ion diodes are favored because of efficiency, beam brightness, perceived scalability, achievable focal intensity, and multistage capability. A light-ion concept addressing these issues uses: (1) an injector divergence of ≤ 24 mrad at 9 MeV; (2) two-stage acceleration to reduce divergence to ≤ 12 mrad at 35 MeV; and (3) self-pinched transport accepting divergences up to 12 mrad. Substantial progress in ion-driven target physics and repetitive ion diode technology is also presented. Z-pinch drivers are being pursued as the shortest pulsed power path to target physics experiments and high-yield fusion. However, light ions remain the pulsed power ICF driver of choice for high-yield fusion energy applications that require driver standoff and repetitive operation. 100 refs

Evaluation of Negative-Ion-Beam Driver Concepts for Heavy Ion Fusion

International Nuclear Information System (INIS)

Grisham, Larry R.

2002-01-01

We evaluate the feasibility of producing and using atomically neutral heavy ion beams produced from negative ions as drivers for an inertial confinement fusion reactor. Bromine and iodine appear to be the most attractive elements for the driver beams. Fluorine and chlorine appear to be the most appropriate feedstocks for initial tests of extractable negative ion current densities. With regards to ion sources, photodetachment neutralizers, and vacuum requirements for accelerators and beam transport, this approach appears feasible within existing technology, and the vacuum requirements are essentially identical to those for positive ion drivers except in the target chamber. The principal constraint is that this approach requires harder vacuums in the target chamber than do space-charge-neutralized positive ion drivers. With realistic (but perhaps pessimistic) estimates of the total ionization cross section, limiting the ionization of a neutral beam to less than 5% while traversing a four -meter path would require a chamber pressure of no more than 5 x 10 -5 torr. Alternatively, even at chamber pressures that are too high to allow propagation of atomically neutral beams, the negative ion approach may still have appeal, since it precludes the possibly serious problem of electron contamination of a positive ion beam during acceleration, drift compression, and focusing

Ultra-high aspect ratio replaceable AFM tips using deformation-suppressed focused ion beam milling

DEFF Research Database (Denmark)

Savenko, Alexey; Yildiz, Izzet; Petersen, Dirch Hjorth

2013-01-01

Fabrication of ultra-high aspect ratio exchangeable and customizable tips for atomic force microscopy (AFM) using lateral focused ion beam (FIB) milling is presented. While on-axis FIB milling does allow high aspect ratio (HAR) AFM tips to be defined, lateral milling gives far better flexibility...

Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

International Nuclear Information System (INIS)

Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

2016-01-01

The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

Ion beam studies

International Nuclear Information System (INIS)

Freeman, J.H.; Chivers, D.J.; Gard, G.A.; Temple, W.

1977-04-01

A description of techniques for the production of intense beams of heavy ions is given. A table of recommended operational procedures for most elements is included. The ionisation of boron is considered in some detail because of its particular importance as a dopant for ion implantation. (author)

Ion beam texturing

Science.gov (United States)

Hudson, W. R.

1977-01-01

A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

Heteroepitaxy of zinc-blende SiC nano-dots on Si substrate by organometallic ion beam

International Nuclear Information System (INIS)

Matsumoto, T.; Kiuchi, M.; Sugimoto, S.; Goto, S.

2006-01-01

The self-assembled SiC nano-dots were fabricated on Si(111) substrate at low-temperatures using the organometallic ion beam deposition technique. The single precursor of methylsilicenium ions (SiCH 3 + ) with the energy of 100 eV was deposited on Si(111) substrate at 500, 550 and 600 deg. C. The characteristics of the self-assembled SiC nano-dots were analyzed by reflection high-energy electron diffraction (RHEED), Raman spectroscopy and atomic force microscope (AFM). The RHEED patterns showed that the crystal structure of the SiC nano-dots formed on Si(111) substrate was zinc-blende SiC (3C-SiC) and it was heteroepitaxy. The self-assembled SiC nano-dots were like a dome in shape, and their sizes were the length of 200-300 nm and the height of 10-15 nm. Despite the low-temperature of 500 deg. C as SiC crystallization the heteroepitaxial SiC nano-dots were fabricated on Si(111) substrate using the organometallic ion beam

Ion beam techniques for analyzing polymers irradiated by ions

International Nuclear Information System (INIS)

Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

1992-01-01

In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

Conical pinched electron beam diode for intense ion beam source

International Nuclear Information System (INIS)

Matsukawa, Yoshinobu; Nakagawa, Yoshiro

1982-01-01

For the purpose of improvement of the pinched electron beam diode, the production of an ion beam by a diode with electrodes in a conical shape was studied at low voltage operation (--200 kV). The ion beam is emitted from a small region of the diode apex. The mean ion beam current density near the axis at 12 cm from the diode apex is two or three times that from an usual flat parallel diode with the same dimension and impedance. The brightness and the power brightness at the otigin are 450 MA/cm 2 sr and 0.12 TW/cm 2 sr respectively. (author)

Metal negative ion beam extraction from a radio frequency ion source

Energy Technology Data Exchange (ETDEWEB)

Kanda, S.; Yamada, N.; Kasuya, T.; Romero, C. F. P.; Wada, M.

2015-04-08

A metal ion source of magnetron magnetic field geometry has been designed and operated with a Cu hollow target. Radio frequency power at 13.56 MHz is directly supplied to the hollow target to maintain plasma discharge and induce self-bias to the target for sputtering. The extraction of positive and negative Cu ion beams have been tested. The ion beam current ratio of Cu{sup +} to Ar{sup +} has reached up to 140% when Ar was used as the discharge support gas. Cu{sup −} ion beam was observed at 50 W RF discharge power and at a higher Ar gas pressure in the ion source. Improvement of poor RF power matching and suppression of electron current is indispensable for a stable Cu{sup −} ion beam production from the source.

Ion Beam Etching: Replication of Micro Nano-structured 3D Stencil Masks

International Nuclear Information System (INIS)

Weber, Patrick; Guibert, Edouard; Mikhailov, Serguei; Bruegger, Juergen; Villanueva, Guillermo

2009-01-01

Ion beam LIGA allows the etching of 3D nano-structures by direct writing with a nano-sized beam. However, this is a relatively time consuming process. We propose here another approach for etching structures on large surfaces and faster, compared to the direct writing process. This approach consists of replicating 3D structured masks, by scanning an unfocused ion beam. A polymer substrate is placed behind the mask, as in UV photolithography. But the main advantage is that the 3D structure of the mask can be replicated into the polymer. For that purpose, the masks (developped at LMIS1, EPFL) are made of a silicon nitride membrane 100 nm thick, on which 3D gold structures up to 200 nm thick, are deposited. The 3D Au structures are made with the nanostencil method, based on successive gold deposition. The IMA institute, from HE-Arc, owns a High Voltage Engineering 1.7 MV Tandetron with both solid and gaseous negative ion sources, able to generate ions from almost every chemical element in a broad range of energies comprised between 400 keV and 6.8 MeV. The beam composition and energy are chosen in such a way, that ions lose a significant fraction of their energy when passing through the thickest regions of the mask. Ions passing through thinner regions of the mask loose a smaller fraction of their energy and etch the polymer with larger thicknesses, allowing a replication of the mask into the polymer. For our trials, we have used a carbon beam with an energy of 500 keV. The beam was focussed to a diameter of 5 mm with solid slits, in order to avoid border effects and thus ensure a homogeneous dose distribution on the beam diameter. The feasibility of this technique has been demonstrated, allowing industrial applications for micro-mould fabrication, micro-fluidics and micro-optics.

A quadrupole ion trap as low-energy cluster ion beam source

CERN Document Server

Uchida, N; Kanayama, T

2003-01-01

Kinetic energy distribution of ion beams was measured by a retarding field energy analyzer for a mass-selective cluster ion beam deposition system that uses a quadrupole ion trap as a cluster ion beam source. The results indicated that the system delivers a cluster-ion beam with energy distribution of approx 2 eV, which corresponded well to the calculation results of the trapping potentials in the ion trap. Using this deposition system, mass-selected hydrogenated Si cluster ions Si sub n H sub x sup + were actually deposited on Si(111)-(7x7) surfaces at impact kinetic energy E sub d of 3-30 eV. Observation by using a scanning tunneling microscope (STM) demonstrated that Si sub 6 H sub x sup + cluster ions landed on the surface without decomposition at E sub d =3 eV, while the deposition was destructive at E sub d>=18 eV. (author)

Hysteretic Vortex-Matching Effects in High-Tc Superconductors with Nanoscale Periodic Pinning Landscapes Fabricated by He Ion-Beam Projection

Science.gov (United States)

Zechner, G.; Jausner, F.; Haag, L. T.; Lang, W.; Dosmailov, M.; Bodea, M. A.; Pedarnig, J. D.

2017-07-01

Square arrays of submicrometer columnar defects in thin YBa2 Cu3 O7 -δ (YBCO) films with spacings down to 300 nm are fabricated by a He ion-beam projection technique. Pronounced peaks in the critical current and corresponding minima in the resistance demonstrate the commensurate arrangement of flux quanta with the artificial pinning landscape, despite the strong intrinsic pinning in epitaxial YBCO films. While these vortex-matching signatures are exactly at the predicted values in field-cooled experiments, they are displaced in zero-field-cooled, magnetic-field-ramped experiments, conserving the equidistance of the matching peaks and minima. These observations reveal an unconventional critical state in a cuprate superconductor with an artificial, periodic pinning array. The long-term stability of such out-of-equilibrium vortex arrangements paves the way for electronic applications employing fluxons.

Ion beam inertial fusion

International Nuclear Information System (INIS)

Bangerter, R.O.

1995-01-01

About twenty years ago, A. W. Maschke of Brookhaven National Laboratory and R. L. Martin of Argonne National Laboratory recognized that the accelerators that have been developed for high energy and nuclear physics are, in many ways, ideally suited to the requirements of inertial fusion power production. These accelerators are reliable, they have a long operating life, and they can be efficient. Maschke and Martin noted that they can focus ion beams to small focal spots over distances of many meters and that they can readily operate at the high pulse repetition rates needed for commercial power production. Fusion, however, does impose some important new constraints that are not important for high energy or nuclear physics applications. The most challenging new constraint from a scientific standpoint is the requirement that the accelerator deliver more than 10 14 W of beam power to a small quantity (less than 100 mg) of matter. The most challenging constraint from an engineering standpoint is accelerator cost. Maschke showed theoretically that accelerators could produce adequate work. Heavy-ion fusion is widely recognized to be a promising approach to inertial fusion power production. It provides an excellent opportunity to apply methods and technology developed for basic science to an important societal need. The pulsed-power community has developed a complementary, parallel approach to ion beam fusion known as light-ion fusion. The talk will discuss both heavy-ion and light-ion fusion. It will explain target physics requirements and show how they lead to constraints on the usual accelerator parameters such as kinetic energy, current, and emittance. The talk will discuss experiments that are presently underway, specifically experiments on high-current ion sources and injectors, pulsed-power machines recirculating induction accelerators, and transverse beam combining. The talk will give a brief description of a proposed new accelerator called Elise

A singly charged ion source for radioactive 11C ion acceleration

Science.gov (United States)

Katagiri, K.; Noda, A.; Nagatsu, K.; Nakao, M.; Hojo, S.; Muramatsu, M.; Suzuki, K.; Wakui, T.; Noda, K.

2016-02-01

A new singly charged ion source using electron impact ionization has been developed to realize an isotope separation on-line system for simultaneous positron emission tomography imaging and heavy-ion cancer therapy using radioactive 11C ion beams. Low-energy electron beams are used in the electron impact ion source to produce singly charged ions. Ionization efficiency was calculated in order to decide the geometric parameters of the ion source and to determine the required electron emission current for obtaining high ionization efficiency. Based on these considerations, the singly charged ion source was designed and fabricated. In testing, the fabricated ion source was found to have favorable performance as a singly charged ion source.

Beam-front dynamics and ion acceleration in drifting intense relativistic electron beams

International Nuclear Information System (INIS)

Alexander, K.F.; Hintze, W.

1976-01-01

Collective ion acceleration at the injection of a relativistic electron beam into a low-pressure gas or a plasma is discussed and its strong dependence on the beam-front dynamics is shown. A simple one-dimensional model taking explicitly into account the motion and ionizing action of the ions in the beam-front region is developed for the calculation of the beam drift velocity. The obtained pressure dependence is in good agreement with experimental data. The energy distribution is shown of the ions accelerated in the moving potential well of the space charge region. Scaling laws for the beam-front dynamics and ion acceleration are derived. (J.U.)

Ion sources for industrial use

International Nuclear Information System (INIS)

Sakudo, Noriyuki

1994-01-01

Industrial applications of ion beams began in the 1970's with their application in fabrication of semiconductor devices. Since then, various improvements have been carried out for source lifetimes, current levels and diversification of ion species. Nowadays, ion beams are expected to be used for surface modification of materials as well as semiconductor fabrication. In this report, some of the typical ion sources are reviewed from the viewpoint of future industrial use. (author)

Multicharged and intense heavy ion beam sources

International Nuclear Information System (INIS)

Kutner, V.B.

1981-01-01

The cyclotron plasma-are source (PIG), duoplasmatron (DP), laser source (LS), electron beam ion source (EBIS) and electron cyclotron resonance source (ECRS) from the viewpoint of generating intense and high charge state beams are considered. It is pointed out that for the last years three types of multicharged ion sources-EBIS, ECR and LS have been essentially developed. In the EBIS source the Xe 48+ ions are produced. The present day level of the development of the electron-beam ionization technique shows that by means of this technique intensive uranium nuclei beams production becomes a reality. On the ECR source Xe 26+ approximately 4x10 10 h/s, Asub(r)sup(12+) approximately 10 12 h/s intensive ion beams are produced. In the laser source a full number of C 6+ ions during one laser pulse constitutes not less than 10 10 from the 5x10mm 2 emission slit. At the present time important results are obtained pointing to the possibility to separate the ion component of laser plasma in the cyclotron central region. On the PIG source the Xe 15+ ion current up to 10μA per pulse is produced. In the duoplasmatron the 11-charge state of xenon ion beams is reached [ru

An argon ion beam milling process for native AlOx layers enabling coherent superconducting contacts

Science.gov (United States)

Grünhaupt, Lukas; von Lüpke, Uwe; Gusenkova, Daria; Skacel, Sebastian T.; Maleeva, Nataliya; Schlör, Steffen; Bilmes, Alexander; Rotzinger, Hannes; Ustinov, Alexey V.; Weides, Martin; Pop, Ioan M.

2017-08-01

We present an argon ion beam milling process to remove the native oxide layer forming on aluminum thin films due to their exposure to atmosphere in between lithographic steps. Our cleaning process is readily integrable with conventional fabrication of Josephson junction quantum circuits. From measurements of the internal quality factors of superconducting microwave resonators with and without contacts, we place an upper bound on the residual resistance of an ion beam milled contact of 50 mΩ μm2 at a frequency of 4.5 GHz. Resonators for which only 6% of the total foot-print was exposed to the ion beam milling, in areas of low electric and high magnetic fields, showed quality factors above 106 in the single photon regime, and no degradation compared to single layer samples. We believe these results will enable the development of increasingly complex superconducting circuits for quantum information processing.

Direct nano-patterning of graphene with helium ion beams

International Nuclear Information System (INIS)

Naitou, Y.; Iijima, T.; Ogawa, S.

2015-01-01

Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO 2 /Si substrates. This technique involves irradiation of the sample with accelerated helium ions (He + ). Doses of 2.0 × 10 16  He +  cm −2 from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of He + in a non-monotonic fashion. Increasing the dose from 2.0 × 10 16 to 5.0 × 10 16  He +  cm −2 improved the spatial resolution to several tens of nanometers. However, doses greater than 1.0 × 10 17  He +  cm −2 degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices

Criteria for selection of target materials and design of high-efficiency-release targets for radioactive ion beam generation

CERN Document Server

Alton, G D; Liu, Y

1999-01-01

In this report, we define criteria for choosing target materials and for designing, mechanically stable, short-diffusion-length, highly permeable targets for generation of high-intensity radioactive ion beams (RIBs) for use at nuclear physics and astrophysics research facilities based on the ISOL principle. In addition, lists of refractory target materials are provided and examples are given of a number of successful targets, based on these criteria, that have been fabricated and tested for use at the Holifield Radioactive Ion Beam Facility (HRIBF).

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

Science.gov (United States)

Coutts, T. J.

1987-01-01

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Auroral ion beams and ion acoustic wave generation by fan instability

Energy Technology Data Exchange (ETDEWEB)

Vaivads, A

1996-04-01

Satellite observations indicate that efficient energy transport among various plasma particles and between plasma waves and plasma particles is taking place in auroral ion beam regions. These observations show that two characteristic wave types are associated with the auroral ion beam regions: electrostatic hydrogen cyclotron waves with frequencies above hydrogen gyrofrequency, and low frequency waves with frequencies below hydrogen gyrofrequency. We speculate that the low frequency waves can be ion acoustic waves generated through the fan instability. The presence of a cold background ion component is necessary for the onset of this instability. A cold ion component has been directly observed and has been indirectly suggested from observations of solitary wave structures. The wave-particle interaction during the development of the fan instability results in an efficient ion beam heating in the direction perpendicular to the ambient magnetic field. The fan instability development and the ion beam heating is demonstrated in a numerical particle simulation. 23 refs, 16 figs.

Intense ion beam research at Los Alamos

International Nuclear Information System (INIS)

Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

1992-01-01

Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long-pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle energy distributions in large, dense, ignited tokamaks such as ITER

Intense ion beam research at Los Alamos

International Nuclear Information System (INIS)

Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

1993-01-01

Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle distributions in large, dense, ignited tokamaks such as ITER

Temperature-dependent ion beam mixing

International Nuclear Information System (INIS)

Rehn, L.E.; Alexander, D.E.

1993-08-01

Recent work on enhanced interdiffusion rates during ion-beam mixing at elevated temperatures is reviewed. As discussed previously, expected increase in ion-beam mixing rates due to 'radiation-enhanced diffusion' (RED), i.e. the free migration of isolated vacancy and interstitial defects, is well documented in single-crystal specimens in the range of 0.4 to 0.6 of absolute melting temperature. In contrast, the increase often observed at somewhat lower temperatures during ion-beam mixing of polycrystalline specimens is not well understood. However, sufficient evidence is available to show that this increase reflects intracascade enhancement of a thermally-activated process that also occurs without irradiation. Recent evidence is presented which suggests that this process is Diffusion-induced Grain-Boundary Migration (DIGM). An important complementary conclusion is that because ion-beam mixing in single-crystal specimens exhibits no significant temperature dependence below that of RED, models that invoke only irradiation-specific phenomena, e.g., cascade-overlap, thermal-spikes, or liquid-diffusion, and hence which predict no difference in mixing behavior between single- or poly-crystalline specimens, cannot account for the existing results

Cobalt alloy ion sources for focused ion beam implantation

Energy Technology Data Exchange (ETDEWEB)

Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

Ion sources development at GANIL for radioactive beams and high charge state ions

International Nuclear Information System (INIS)

Leroy, R.; Barue, C.; Canet, C.; Dupuis, M.; Flambard, J.L.; Gaubert, G.; Gibouin, S.; Huguet, Y.; Jardin, P.; Lecesne, N.; Leherissier, P.; Lemagnen, F.; Pacquet, J.Y.; Pellemoine-Landre, F.; Rataud, J.P.; Saint-Laurent, M.G.; Villari, A.C.C.; Maunoury, L.

2001-01-01

The GANIL laboratory has in charge the production of ion beams for nuclear and non nuclear physics. This article reviews the last developments that are underway in the fields of radioactive ion beam production, increase of the metallic ion intensities and production of highly charges ion beams. (authors)

Beam emittance measurements on multicusp ion sources

Energy Technology Data Exchange (ETDEWEB)

Sarstedt, M.; Lee, Y.; Leung, K.N. [and others

1995-08-01

Multicusp ion sources are used for various applications. Presently, the implementation of this type of ion source planned for the development of an ion beam lithography machine, which will be used for the projection of sub-0.2 {mu}m patterns onto a wafer substrate. Since, for this application, a very good beam quality and a small ion energy spread are required, emittance measurements have been performed on a multicusp ion source for various source conditions. It is shown that the installation of proper capacitors between the extraction electrodes is necessary to avoid rf-pickup, which otherwise leads to a distortion of the beam emittance. The influence of the magnetic filter field on the beam emittance has been investigated, and the beam emittance of a dc filament-discharge plasma has also been compared to that of an rf-generated plasma.

Beam emittance measurements on multicusp ion sources

International Nuclear Information System (INIS)

Sarstedt, M.; Lee, Y.; Leung, K.N.

1995-08-01

Multicusp ion sources are used for various applications. Presently, the implementation of this type of ion source planned for the development of an ion beam lithography machine, which will be used for the projection of sub-0.2 μm patterns onto a wafer substrate. Since, for this application, a very good beam quality and a small ion energy spread are required, emittance measurements have been performed on a multicusp ion source for various source conditions. It is shown that the installation of proper capacitors between the extraction electrodes is necessary to avoid rf-pickup, which otherwise leads to a distortion of the beam emittance. The influence of the magnetic filter field on the beam emittance has been investigated, and the beam emittance of a dc filament-discharge plasma has also been compared to that of an rf-generated plasma

Colliding-beams polarized ion source

International Nuclear Information System (INIS)

Trainor, T.A.; Douglas, J.G.; Badt, D.; Christiensen, C.; Herron, A.; Leach, D.; Olsen, J.; Osborne, J.L.; Zeps, V.

1985-01-01

This ion source was to be purchased from ANAC, Inc., a New Zealand-based supplier of beam optics hardware and atomic beam polarized ion sources in December 1982. Shortly before scheduled delivery ANAC went into receivership. During 1983 little work was done on the project as various steps were taken by us, first to get the ion source completed at ANAC, and then, failing that, to obtain the existing parts. In early 1984 we began work to finish the ion source in Seattle. The project is nearly complete, and this article presents progress to date. 2 refs

Modeling of ion beam surface treatment

Energy Technology Data Exchange (ETDEWEB)

Stinnett, R W [Quantum Manufacturing Technologies, Inc., Albuquerque, NM (United States); Maenchen, J E; Renk, T J [Sandia National Laboratories, Albuquerque, NM (United States); Struve, K W [Mission Research Corporation, Albuquerque, NM (United States); Campbell, M M [PASTDCO, Albuquerque, NM (United States)

1997-12-31

The use of intense pulsed ion beams is providing a new capability for surface engineering based on rapid thermal processing of the top few microns of metal, ceramic, and glass surfaces. The Ion Beam Surface Treatment (IBEST) process has been shown to produce enhancements in the hardness, corrosion, wear, and fatigue properties of surfaces by rapid melt and re-solidification. A new code called IBMOD was created, enabling the modeling of intense ion beam deposition and the resulting rapid thermal cycling of surfaces. This code was used to model the effect of treatment of aluminum, iron, and titanium using different ion species and pulse durations. (author). 3 figs., 4 refs.

Fabrication of Conductive Nanostructures by Femtosecond Laser Induced Reduction of Silver Ions

Science.gov (United States)

Barton, Peter G.

Nanofabrication through multiphoton absorption has generated considerable interest because of its unique ability to generate 2D and 3D structures in a single laser-direct-write step as well as its ability to generate feature sizes well below the diffraction limited laser spot size. The majority of multiphoton fabrication has been used to create 3D structures of photopolymers which have applications in a wide variety of fields, but require additional post-processing steps to fabricate conductive structures. It has been shown that metal ions can also undergo multiphoton absorption, which reduces the metal ions to stable atoms/nanoparticles which are formed at the laser focal point. When the focus is located at the substrate surface, the reduced metal is deposited on the surface, which allows arbitrary 2D patterning as well as building up 3D structures from this first layer. Samples containing the metal ions can be prepared either in a liquid solution, or in a polymer film. The polymer film approach has the benefit of added support for the 3D metallic structures; however it is difficult to remove the polymer after fabrication to leave a free standing metallic structure. With the ion solution method, free standing metallic structures can be fabricated but need to be able to withstand surface tension forces when the remaining unexposed solution is washed away. So far, silver nanowires with resistivity on the order of bulk silver have been fabricated, as well as a few small 3D structures. This research focuses on the surfactant assisted multiphoton reduction of silver ions in a liquid solution. The experimental setup consists of a Coherent Micra 10 Ultrafast laser with 30fs pulse length, 80MHz repetition rate, and a wavelength centered at 800nm. This beam is focused into the sample using a 100x objective with a N.A. of 1.49. Silver structures such as nanowires and grid patterns have been produced with minimum linewidth of 180nm. Silver nanowires with resistivity down to

Development of Focused Ion Beam technique for high speed steel 3D-SEM artefact fabrication

DEFF Research Database (Denmark)

Carli, Lorenzo; MacDonald, A. Nicole; De Chiffre, Leonardo

2009-01-01

The work describes preliminary manufacture by grinding, followed by machining on a Focused Ion Beam (FIB), of a high speed steel step artefact for 3D-SEM calibration. The FIB is coupled with a SEM in the so called dual beam instrument. The milling capabilities of FIB were checked from a qualitative...... point of view, using the dual beam SEM imaging, and quantitatively using a reference stylus instrument, to establish traceability. A triangular section having a depth of about 10 μm was machined, where the 50 μm curvature radius due to grinding was reduced to about 2 μm by FIB milling...

Effects of oxygen gas flow rate and ion beam plasma conditions on the opto-electronic properties of indium molybdenum oxide films fabricated by ion beam-assisted evaporation

International Nuclear Information System (INIS)

Kuo, C.C.; Liu, C.C.; Lin, C.C.; Liou, Y.Y.; He, J.L.; Chen, F.S.

2008-01-01

The purpose of the present work is to experimentally study the effects of the oxygen gas flow rate and ion beam plasma conditions on the properties of indium molybdenum oxide (IMO) films deposited onto the polyethersulfone (PES) substrate. Crystal structure, surface morphology, and optoelectronic properties of IMO films are examined as a function of oxygen gas flow rate and ion beam discharge voltage. Experimental results show that the IMO films consist of a cubic bixbyite B-In 2 O 3 single phase with its crystal preferred orientation alone B(222). Mo 6+ ions are therefore considered to partially substitute In 3+ sites in the deposit. Under-controlled ion bombardment during deposition enhances the reaction among those arriving oxygen and metal ion species to condense into IMO film and facilitates a decreased surface roughness of IMO film. The film with ultimate crystallinity and the lowest surface roughness is obtained when the oxygen flow rate of 3 sccm and the discharge voltage of 110 V are employed. This results in the lowest electrical resistivity due mainly to the increased Hall mobility and irrelevant to carrier concentration. The lowest electrical resistivity of 8.63 x 10 -4 ohm-cm with a 84.63% transmittance at a wavelength of 550 nm can be obtained, which satisfies the requirement of a flexible transparent conductive polymer substrate

Ion beam source construction and applications

International Nuclear Information System (INIS)

Torab, S.I.R.

2011-01-01

The aim of this thesis is to improve the performance of a new shape cold cathode Penning ion source to be suitable for some applications. In this work, many trials have been made to reach the optimum dimensions of the new shape of cold Molybdenum cathode Penning ion source with radial extraction. The high output ion beam can be extracted in a direction transverse to the discharge region. The new shape cold cathode Penning ion source consists of Copper cylindrical hollow anode of 40 mm length, 12 mm diameter and has two similar cone ends of 15 mm length, 22 mm upper cone diameter and 12 mm bottom cone diameter. The two movable Molybdenum cathodes are fixed in Perspex insulator and placed symmetrically at two ends of the anode. The Copper emission disc of 2 mm thickness and has central aperture of different diameters is placed at the middle of the anode for ion beam exit. The inner surface of the emission disc is isolated from the anode by Perspex insulator except an area of diameter 5 mm to confine the electrical discharge in this area. A movable Faraday cup is placed at different distances from the emission electrode aperture and used to collect the output ion beam from the ion source. The working gases are admitted to the ion source through a hole in the anode via a needle valve which placed between the gas cylinder and the ion source. The optimum anode- cathode distance, the uncovered area diameter of the emission disc, the central aperture diameter of the emission electrode, the distance between emission electrode and Faraday cup have been determined using Argon gas. The optimum distances of the ion source were found to be equal to 6 mm, 5 mm, 2.5 mm, and 3 cm respectively where stable discharge current and maximum output ion beam current at low discharge current can be obtained. The discharge characteristics, ion beam characteristics, and the efficiency of the ion source have been measured at different operating conditions and different gas pressures using

Electrohydrodynamic emitters of ion beams

International Nuclear Information System (INIS)

Dudnikov, V.G.; Shabalin, A.L.

1990-01-01

Physical processes determining generation of ion beams with high emission current density in electrohydrodynamic emitters are considered. Electrohydrodynamic effects developing in ion emission features and kinetics of ion interaction in beams with high density are discussed. Factors determining the size of the emission zone, emission stability at high and low currents, cluster generation, increase of energy spread and decrease of brightness are analyzed. Problems on practical provision of stable EHD emitter functioning are considered. 94 refs.; 8 figs.; 1 tab

ORNL positive ion neutral beam program

International Nuclear Information System (INIS)

Whealton, J.H.; Haselton, H.H.; Barber, G.C.

1978-01-01

The neutral beam group at Oak Ridge National Laboratory has constructed neutral beam generators for the ORMAK and PLT devices, is presently constructing neutral beam devices for the ISX and PDX devices, and is contemplating the construction of neutral beam systems for the advanced TNS device. These neutral beam devices stem from the pioneering work on ion sources of G. G. Kelley and O. B. Morgan. We describe the ion sources under development at this Laboratory, the beam optics exhibited by these sources, as well as some theoretical considerations, and finally the remainder of the beamline design

Ion-beam technologies

Energy Technology Data Exchange (ETDEWEB)

Fenske, G.R. [Argonne National Lab., IL (United States)

1993-01-01

This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

Gradient and alternating diameter nanopore templates by focused ion beam guided anodization

International Nuclear Information System (INIS)

Chen Bo; Lu, Kathy; Tian Zhipeng

2010-01-01

Ordered arrays of anodic alumina nanopores with uniform pore diameters have been fabricated by self-organized anodization of aluminum. However, gradient or alternating diameter nanopore arrays with designed interpore distances have not been possible. In this study, focused ion beam lithography is used to fabricate hexagonally arranged concaves with different diameters in designed arrangements on aluminum surfaces. The patterns are then used to guide the further growth of alumina nanopores in the subsequent oxalic acid anodization. Gradient and alternating nanopore arrangements have been attained by FIB patterning guided oxalic acid anodization. The fundamental understanding of the process is discussed.

MEV Energy Electrostatic Accelerator Ion Beam Emittance Measurement

OpenAIRE

I.G. Ignat’ev; M.I. Zakharets; S.V. Kolinko; D.P. Shulha

2014-01-01

The testing equipment was designed, manufactured and tried out permitting measurements of total current, current profile and emittance of an ion beam extracted from the ion beam. MeV energy electrostatic accelerator ion H + beam emittance measurement results are presented.

Mutation induction by ion beams in plants

International Nuclear Information System (INIS)

Tanaka, Atsushi

2001-01-01

The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

Mutation induction by ion beams in plants

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

2001-03-01

The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

Production of microbunched beams of very highly charged ions with an electron beam ion source

International Nuclear Information System (INIS)

Stoeckli, M.P.

1998-01-01

Electron beam ion sources produce very highly charged ions most efficiently in a batch mode as the confinement time can be directly optimized for the production of the desired charge state. If, after confinement, the voltage of the ion-confining downstream dam is lowered rapidly, all ions escape and form an ion beam pulse with a length of a few tens of μs. Raising the main trap voltage while maintaining a constant dam voltage in a open-quotes spill-over expulsionclose quotes reduces the energy spread of the expelled ions. The longer time periods of open-quotes slow-,close quotes open-quotes leaky batch mode-,close quotes and open-quotes direct current (dc) batch mode-close quotes expulsions allow for increasing the ion beam duty cycle. Combining the rapid expulsion with one of the latter methods allows for the expulsion of the ions of a single batch in many small microbunches with variable intervals, maintaining the low energy spread and the increased duty cycle of slow expulsions. Combining the open-quotes microbunchingclose quotes with open-quotes dc batch mode productionclose quotes and a multitrap operation will eventually allow for the production of equally intense ion bunches over a wide range of frequencies without any deadtime, and with minimal compromise on the most efficient production parameters. copyright 1998 American Institute of Physics

Influence of ion beam and geometrical parameters on properties of Si thin films grown by Ar ion beam sputtering

Energy Technology Data Exchange (ETDEWEB)

Bundesmann, Carsten; Feder, Rene; Neumann, Horst [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Leipzig (Germany)

2012-07-01

Ion beam sputtering (IBS) offers, in contrast to other physical vapour deposition techniques, such as magnetron sputtering or electron beam evaporation, the opportunity to change the properties of the layer forming particles (sputtered and scattered particles) by varying ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, emission angle). Consequently, these effects can be utilized to tailor thin film properties [1]. The goal is to study systematically the correlations between the primary and secondary parameters and, at last, the effects on the properties of Si thin films, such as optical properties, stress, surface topography and composition. First experimental results are presented for Ar-ion sputtering of Si.

Ion beam induced charge and cathodoluminescence imaging of response uniformity of CVD diamond radiation detectors

CERN Document Server

Sellin, P J; Galbiati, A; Maghrabi, M; Townsend, P D

2002-01-01

The uniformity of response of CVD diamond radiation detectors produced from high quality diamond film, with crystallite dimensions of >100 mu m, has been studied using ion beam induced charge imaging. A micron-resolution scanning alpha particle beam was used to produce maps of pulse height response across the device. The detectors were fabricated with a single-sided coplanar electrode geometry to maximise their sensitivity to the surface region of the diamond film where the diamond crystallites are highly ordered. High resolution ion beam induced charge images of single crystallites were acquired that demonstrate variations in intra-crystallite charge transport and the termination of charge transport at the crystallite boundaries. Cathodoluminescence imaging of the same crystallites shows an inverse correlation between the density of radiative centres and regions of good charge transport.

Laser cooling and ion beam diagnosis of relativistic ions in a storage ring

International Nuclear Information System (INIS)

Schroeder, S.

1990-08-01

Particle accelerator and storage ring technology has reached an advanced state, so that different heavy ion storage rings are coming into operation by now, capable of storing even fully stripped ions up to U 92+ . The main purpose of these machines are the accumulation of ions and the ability of improving the beam quality, that is the phase space density of the stored beams. This beam cooling is done successfully by the well established stochastic and electron cooling techniques. A new cooling method, the laser cooling, is taken over from atomic beam and ion trap experiments, where it has yielded extremely low temperatures of atomic samples. As a canditate at storage rings 7 Li + ions are stored in the Heidelberg TSR at 13.3 MeV. The ion beam properties of the metastable fraction like momentum spread, storage time and the influence of residual gas scattering are investigated by colinear laser spectroscopy in the experimental section of the TSR. An optical pumping experiment using two dye laser systems yields information about ion kinematics and velocity mixing processes in the ring. Lifetimes in the order of 100 ms for velocity classes marked in this way show that laser cooling can be applied to the stored 7 Li + beam. In an experimental situation of two strong counterpropagating laser beams, both tuned near resonance, a dramatic reduction of the ion beam momentum spread is observed. With a special geometrical control of laser and ion beam the longitudinal beam temperature is reduced from 260 K to at least 3 K with very high collection efficiency. (orig./HSI) [de

A high-efficiency positive (negative) surface ionization source for radioactive ion beam (abstract)a

International Nuclear Information System (INIS)

Alton, G.D.; Mills, G.D.

1996-01-01

A versatile, new concept, spherical-geometry, positive (negative) surface-ionization source has been designed and fabricated which will have the capability of generating both positive- and negative-ion beams without mechanical changes to the source. The source utilizes a highly permeable, high-work-function Ir ionizer (φ≡5.29 eV) for ionizing highly electropositive atoms/molecules; while for negative-surface ionization, the work function is lowered to φ≡1.43 eV by continually feeding cesium vapor through the ionizer matrix. The use of this technique for negative ion beam generation has the potential of overcoming the chronic poisoning effects experienced with LaB 6 while enhancing considerably the efficiency for negative surface ionization of atoms and molecules with intermediate electron affinities. The flexibility of operation in either mode makes it especially attractive for radioactive ion beam applications and, therefore, the source will be used as a complementary replacement for the high-temperature electron impact ionization sources presently in use at the Holifield radioactive beam facility. The design features and operational principles of the source will be described in this report. copyright 1996 American Institute of Physics

Important atomic physics issues for ion beam fusion

International Nuclear Information System (INIS)

Bangerter, Roger.

1986-01-01

The nearly endless variety of interesting and challenging problems makes physics research enjoyable. Most of us would choose to be physicists even if physics had no practical applications. However, physics does have practical applications. This workshop deals with one of those applications, namely ion beam fusion. Not all interesting and challenging atomic physics questions are important for ion beam fusion. This paper suggests some questions that may be important for ion beam fusion. It also suggests some criteria for determining if a question is only interesting, or both interesting and important. Importance is time dependent and, because of some restrictions on the flow of information, also country dependent. In the early days of ion beam fusion, it was important to determine if ion beam fusion made sense. Approximate answers and bounds on various parameters were required. Accurate, detailed answers were not needed. Because of the efforts of many people attending this workshop, we now know that ion beam fusion does make some sense. We must still determine if ion beam fusion truly makes good sense. If it does make good sense, we must determine how to make it work. Accurate detailed answers are becoming increasingly important. (author)

Fabrication of planar waveguide in KNSBN crystal by swift heavy ion beam irradiation

International Nuclear Information System (INIS)

Guan, Jing; Wang, Lei; Qin, Xifeng

2013-01-01

We report on the fabrication of the planar waveguides in the KNSBN crystal by using 17 MeV C 5+ ions at a fluence of 2 × 10 14 ions/cm 2 . After implantation, near surface regions of the crystal, there has a positive extraordinary refractive index (n e ) change and the light inside the waveguides can propagate in a non-leaky manner. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the reconstructed modal distributions. The propagation loss for C 5+ irradiated waveguide is ∼0.8 dB/cm at 633 nm and ∼0.72 dB/cm at 1064 nm. The waveguide gives good confinement of waveguide modes, which exhibits acceptable guiding qualities for potential applications in integrated optics

Fabrication of planar waveguide in KNSBN crystal by swift heavy ion beam irradiation

Science.gov (United States)

Guan, Jing; Wang, Lei; Qin, Xifeng

2013-11-01

We report on the fabrication of the planar waveguides in the KNSBN crystal by using 17 MeV C5+ ions at a fluence of 2 × 1014 ions/cm2. After implantation, near surface regions of the crystal, there has a positive extraordinary refractive index (ne) change and the light inside the waveguides can propagate in a non-leaky manner. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the reconstructed modal distributions. The propagation loss for C5+ irradiated waveguide is ∼0.8 dB/cm at 633 nm and ∼0.72 dB/cm at 1064 nm. The waveguide gives good confinement of waveguide modes, which exhibits acceptable guiding qualities for potential applications in integrated optics.

The application of ion beams to corrosion science

International Nuclear Information System (INIS)

Ashworth, V.; Grant, W.A.; Proctor, R.P.M.

1976-01-01

Briefly, the paper provides some basic information on the use of ion beams for surface alloying and surface analysis. After a brief historical review of those fields in which the techniques are already widely applied the important features of typical ion beam machines are described. The basic processes that occur when an ion beam strikes a solid are then considered. Selected ion beam analysis techniques are then discussed. Attention is drawn, wherever possible, to applications in corrosion science and engineering. (author)

High-powered pulsed-ion-beam acceleration and transport

Energy Technology Data Exchange (ETDEWEB)

Humphries, S. Jr.; Lockner, T.R.

1981-11-01

The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized.

High-powered pulsed-ion-beam acceleration and transport

International Nuclear Information System (INIS)

Humphries, S. Jr.; Lockner, T.R.

1981-11-01

The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized

Ion beam modification of solids ion-solid interaction and radiation damage

CERN Document Server

Wesch, Werner

2016-01-01

This book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for ins...

Integrated polarization beam splitter with relaxed fabrication tolerances

OpenAIRE

Perez-Galacho, D.; Halir, R.; Ortega-Monux, A.; Alonso-Ramos, C.; Zhang, R.; Runge, P.; Janiak, K.; Bach, H-G; Steffan, A. G.; Molina-Fernandez, I.

2013-01-01

Polarization handling is a key requirement for the next generation of photonic integrated circuits (PICs). Integrated polarization beam splitters (PBS) are central elements for polarization management, but their use in PICs is hindered by poor fabrication tolerances. In this work we present a fully passive, highly fabrication tolerant polarization beam splitter, based on an asymmetrical Mach-Zehnder interferometer (MZI) with a Si/SiO2 Periodic Layer Structure (PLS) on top of one of its arms. ...

The histories of capillary optics for x-rays and ion beams in Russia, USA, and Japan

International Nuclear Information System (INIS)

Umezawa, Kenji

2009-01-01

This article introduces the history of X-ray lens and the present situation of ion beam focusing with glass capillaries systems. The basic technology of X-ray lens using glass capillaries was independently developed over 20 years by Prof. Kumakhov in the former Soviet Union and Dr. Soejima in Japan, respectively. In the 1990's, Prof. W.M. Gibson and his coworkers intensively studied X-rays and neutron optics in Albany, NY, USA. X-ray optics with glass capillaries, in these days is well known in the world. This unique technique was fabricated to collimate X-rays. Also, new ion beam analysis technique with glass capillaries systems has been intensively developed by Dr. Nebiki and Prof. Narusawa in Kochi, Japan. These X-rays and ion beams techniques have brought new application for many fields; X-ray detector, X-ray lithography, X-ray astronomy, microdiffraction, medical therapy and biological applications. (author)

Tool steel ion beam assisted nitrocarburization

International Nuclear Information System (INIS)

Zagonel, L.F.; Alvarez, F.

2007-01-01

The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

Design study of primary ion provider for relativistic heavy ion collider electron beam ion source.

Science.gov (United States)

Kondo, K; Kanesue, T; Tamura, J; Okamura, M

2010-02-01

Brookhaven National Laboratory has developed the new preinjector system, electron beam ion source (EBIS) for relativistic heavy ion collider (RHIC) and National Aeronautics and Space Administration Space Radiation Laboratory. Design of primary ion provider is an essential problem since it is required to supply beams with different ion species to multiple users simultaneously. The laser ion source with a defocused laser can provide a low charge state and low emittance ion beam, and is a candidate for the primary ion source for RHIC-EBIS. We show a suitable design with appropriate drift length and solenoid, which helps to keep sufficient total charge number with longer pulse length. The whole design of primary ion source, as well as optics arrangement, solid targets configuration and heating about target, is presented.

High definition aperture probes for near-field optical microscopy fabricated by focused ion beam milling

NARCIS (Netherlands)

Veerman, J.A.; Otter, A.M.; Kuipers, L.; van Hulst, N.F.

1998-01-01

We have improved the optical characteristics of aluminum-coated fiber probes used in near-field scanning optical microscopy by milling with a focused ion beam. This treatment produces a flat-end face free of aluminum grains, containing a well- defined circularly-symmetric aperture with controllable

Beam modulation for heavy ion radiotherapy

International Nuclear Information System (INIS)

Kanai, T.; Minohara, S.; Sudou, M.

1993-01-01

The first clinical trial of heavy ion radiation therapy is scheduled in 1994 by using the heavy ion medical accelerator in Chiba (HIMAC). In order to start the clinical trial, first, it is necessary to know the physical characteristics of high energy heavy ions in human bodies, for example, dose and linear energy transfer (LET) distribution. Also the knowledge on the biological effectiveness of heavy ions is required. Based on these biophysical properties of heavy ions, monoenergetic heavy ion beam should be modulated so as to make the spread Bragg peak suitable to heavy ion radiation therapy. In order to establish a methodology to obtain the most effective spread Bragg peak for heavy ion radiation therapy, a heavy ion irradiation port at the RIKEN ring cyclotron facility was constructed. By using a 135 MeV/u carbon beam, the biophysical properties of the heavy ions were investigated, and a range modulator was designed to have uniform biological response in the spread Bragg peak. The physical and biological rationality of the spread Bragg peak were investigated. The dose, LET and biological effect of a monoenergetic heavy ion beam, the design of the range modulator, and the distributions of LET and biological dose for the spread Bragg peak are reported. (K.I.)

Study of beam optics and beam halo by integrated modeling of negative ion beams from plasma meniscus formation to beam acceleration

International Nuclear Information System (INIS)

Miyamoto, K.; Okuda, S.; Hatayama, A.; Hanada, M.; Kojima, A.

2013-01-01

To understand the physical mechanism of the beam halo formation in negative ion beams, a two-dimensional particle-in-cell code for simulating the trajectories of negative ions created via surface production has been developed. The simulation code reproduces a beam halo observed in an actual negative ion beam. The negative ions extracted from the periphery of the plasma meniscus (an electro-static lens in a source plasma) are over-focused in the extractor due to large curvature of the meniscus.

Study of beam optics and beam halo by integrated modeling of negative ion beams from plasma meniscus formation to beam acceleration

Energy Technology Data Exchange (ETDEWEB)

Miyamoto, K. [Naruto University of Education, 748 Nakashima, Takashima, Naruto-cho, Naruto-shi, Tokushima 772-8502 (Japan); Okuda, S.; Hatayama, A. [Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); Hanada, M.; Kojima, A. [Japan Atomic Energy Agency, 801-1 Mukouyama, Naka 319-0913 (Japan)

2013-01-14

To understand the physical mechanism of the beam halo formation in negative ion beams, a two-dimensional particle-in-cell code for simulating the trajectories of negative ions created via surface production has been developed. The simulation code reproduces a beam halo observed in an actual negative ion beam. The negative ions extracted from the periphery of the plasma meniscus (an electro-static lens in a source plasma) are over-focused in the extractor due to large curvature of the meniscus.

Lithium ion beam driven hohlraums for PBFA II

International Nuclear Information System (INIS)

Dukart, R.J.

1994-01-01

In our light ion inertial confinement fusion (ICF) program, fusion capsules are driven with an intense x-ray radiation field produced when an intense beam of ions penetrates a radiation case and deposits energy in a foam x-ray conversion region. A first step in the program is to generate and measure these intense fields on the Particle Beam Fusion Accelerator II (PBFA II). Our goal is to generate a 100-eV radiation temperature in lithium ion beam driven hohlraums, the radiation environment which will provide the initial drive temperature for ion beam driven implosion systems designed to achieve high gain. In this paper, we describe the design of such hohlraum targets and their predicted performance on PBFA II as we provide increasing ion beam intensities

Negative ion beam extraction in ROBIN

International Nuclear Information System (INIS)

Bansal, Gourab; Gahlaut, Agrajit; Soni, Jignesh; Pandya, Kaushal; Parmar, Kanu G.; Pandey, Ravi; Vuppugalla, Mahesh; Prajapati, Bhavesh; Patel, Amee; Mistery, Hiren; Chakraborty, Arun; Bandyopadhyay, Mainak; Singh, Mahendrajit J.; Phukan, Arindam; Yadav, Ratnakar K.; Parmar, Deepak

2013-01-01

Highlights: ► A RF based negative hydrogen ion beam test bed has been set up at IPR, India. ► Ion source has been successfully commissioned and three campaigns of plasma production have been carried out. ► Extraction system (35 kV) has been installed and commissioning has been initiated. Negative ion beam extraction is immediate milestone. -- Abstract: The RF based single driver −ve ion source experiment test bed ROBIN (Replica Of BATMAN like source in INDIA) has been set up at Institute for Plasma Research (IPR), India in a technical collaboration with IPP, Garching, Germany. A hydrogen plasma of density 5 × 10 12 cm −3 is expected in driver region of ROBIN by launching 100 kW RF power into the driver by 1 MHz RF generator. The cesiated source is expected to deliver a hydrogen negative ion beam of 10 A at 35 kV with a current density of 35 mA/cm 2 as observed in BATMAN. In first phase operation of the ROBIN ion source, a hydrogen plasma has been successfully generated (without extraction system) by coupling 80 kW RF input power through a matching network with high power factor (cos θ > 0.8) and different plasma parameters have been measured using Langmuir probes and emission spectroscopy. The plasma density of 2.5 × 10 11 cm −3 has been measured in the extraction region of ROBIN. For negative hydrogen ion beam extraction in second phase operation, extraction system has been assembled and installed with ion source on the vacuum vessel. The source shall be first operated in volume mode for negative ion beam extraction. The commissioning of the source with high voltage power supply has been initiated

Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

Science.gov (United States)

Puttaraksa, Nitipon; Unai, Somrit; Rhodes, Michael W.; Singkarat, Kanda; Whitlow, Harry J.; Singkarat, Somsorn

2012-02-01

In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1-1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chip fabricated by this technique was demonstrated to be a microfluidic device.

Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

International Nuclear Information System (INIS)

Puttaraksa, Nitipon; Unai, Somrit; Rhodes, Michael W.; Singkarat, Kanda; Whitlow, Harry J.; Singkarat, Somsorn

2012-01-01

In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1–1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chip fabricated by this technique was demonstrated to be a microfluidic device.

Atomic layer deposition of HfO{sub 2} on graphene through controlled ion beam treatment

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki Seok [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419 (Korea, Republic of); Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun [School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei Ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Yeom, Geun Young, E-mail: knam1004@dju.kr, E-mail: gyyeom@skku.edu [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419 (Korea, Republic of); Kim, Kyong Nam, E-mail: knam1004@dju.kr, E-mail: gyyeom@skku.edu [School of Advanced Materials Science and Engineering, Daejeon University, Yongun-dong, Dong-gu, Daejeon 34520 (Korea, Republic of)

2016-05-23

The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar{sup +} ion beam, we cleaned the polymer residue without damaging the graphene network. HfO{sub 2} grown by atomic layer deposition on graphene cleaned using an Ar{sup +} ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar{sup +} ion cleaning) showed a non-uniform structure. A graphene–HfO{sub 2}–metal capacitor fabricated by growing 20-nm thick HfO{sub 2} on graphene exhibited a very low leakage current (<10{sup −11} A/cm{sup 2}) for Ar{sup +} ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

Ion beam modification of biological materials in nanoscale

Science.gov (United States)

Yu, L. D.; Anuntalabhochai, S.

2012-07-01

Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.

Ion beam modification of biological materials in nanoscale

International Nuclear Information System (INIS)

Yu, L.D.; Anuntalabhochai, S.

2012-01-01

Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.

Technical Aspects of Delivering Simultaneous Dual and Triple Ion Beams to a Target at the Michigan Ion Beam Laboratory

Science.gov (United States)

Toader, O.; Naab, F.; Uberseder, E.; Kubley, T.; Taller, S.; Was, G.

The Michigan Ion Beam Laboratory (MIBL) at the University of Michigan in Ann Arbor, Michigan, USA, plays a significant role in supporting the mission of the U.S. DOE Office of Nuclear Energy. MIBL is a charter laboratory of the NSUF (National Scientific User Facility - US DoE) and hosts users worldwide. The laboratory has evolved from a single accelerator laboratory to a highly versatile facility with three accelerators (3 MV Tandem, a 400 kV Ion Implanter and a 1.7 MV Tandem), seven beam lines and five target chambers that together, provide unique capabilities to capture the extreme environment experienced by materials in reactor systems. This capability now includes simultaneous multiple (dual, triple) ion irradiations, an irradiation accelerated corrosion cell, and soon, in-situ dual beam irradiation in a transmission electron microscope (TEM) for the study of radiation damage coupled with injection of transmutation elements. The two beam lines that will connect to the 300 kV FEI Tecnai G2 F30 microscope are expected to be operational by the end of 2017. Multiple simultaneous ion beam experiments involving light and heavy ions are already in progress. This paper will outline the current equipment and will focus on the new capability of running dual and triple ion beam experiments.

Positioning of self-assembled InAs quantum dots by focused ion beam implantation

International Nuclear Information System (INIS)

Mehta, M.

2007-01-01

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 μm was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from positioned QDs confirm their good optical quality. (orig.)

Kinetic plasma simulation of ion beam extraction from an ECR ion source

International Nuclear Information System (INIS)

Elliott, S.M.; White, E.K.; Simkin, J.

2012-01-01

Designing optimized ECR (electron cyclotron resonance) ion beam sources can be streamlined by the accurate simulation of beam optical properties in order to predict ion extraction behavior. The complexity of these models, however, can make PIC-based simulations time-consuming. In this paper, we first describe a simple kinetic plasma finite element simulation of extraction of a proton beam from a permanent magnet hexapole ECR ion source. Second, we analyze the influence of secondary electrons generated by ion collisions in the residual gas on the space charge of a proton beam of a dual-solenoid ECR ion source. The finite element method (FEM) offers a fast modeling environment, allowing analysis of ion beam behavior under conditions of varying current density, electrode potential, and gas pressure. The new version of SCALA/TOSCA v14 permits the making of simulations in tens of minutes to a few hours on standard computer platforms without the need of particle-in-cell methods. The paper is followed by the slides of the presentation. (authors)

Induction of surface modification of polytetrafluoroethylene with proton ion beams

Energy Technology Data Exchange (ETDEWEB)

Noh, I S; Kim, H R; Choi, Y J; Park, H S [Seoul National Univ. of Technology, Seoul (Korea, Republic of)

2007-04-15

Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

Induction of surface modification of polytetrafluoroethylene with proton ion beams

International Nuclear Information System (INIS)

Noh, I. S.; Kim, H. R.; Choi, Y. J.; Park, H. S.

2007-04-01

Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

Ion accumulation and space charge neutralization in intensive electron beams for ion sources and electron cooling

International Nuclear Information System (INIS)

Shirkov, G.D.

1996-01-01

The Electron Beam Ion Sources (EBIS), Electron Beam Ion Traps (EBIT) and electron beams for electron cooling application have the beam parameters in the same ranges of magnitudes. EBIS and EBIT produce and accumulate ions in the beam due to electron impact ionization. The cooling electron beam accumulates positive ions from the residual gas in the accelerator chamber during the cooling cycle. The space charge neutralization of cooling beam is also used to reduce the electron energy spread and enhance the cooling ability. The advanced results of experimental investigations and theoretical models of the EBIS electron beams are applied to analyze the problem of beam neutralization in the electron cooling techniques. The report presents the analysis of the most important processes connected with ion production, accumulation and losses in the intensive electron beams of ion sources and electron cooling systems for proton and ion colliders. The inelastic and elastic collision processes of charged particles in the electron beams are considered. The inelastic processes such as ionization, charge exchange and recombination change the charge states of ions and neutral atoms in the beam. The elastic Coulomb collisions change the energy of particles and cause the energy redistribution among components in the electron-ion beams. The characteristic times and specific features of ionization, beam neutralization, ion heating and loss in the ion sources and electron cooling beams are determined. The dependence of negative potential in the beam cross section on neutralization factor is studied. 17 refs., 5 figs., 1 tab

Self-pinched transport of intense ion beams

International Nuclear Information System (INIS)

Ottinger, P.F.; Neri, J.M.; Stephanakis, S.J.

1999-01-01

Electron beams with substantial net currents have been routinely propagated in the self-pinched mode for the past two decades. However, as the physics of gas breakdown and beam neutralization is different for ion beams, previous predictions indicated insufficient net current for pinching so that ion beam self-pinched transport (SPT) was assumed impossible. Nevertheless, recent numerical simulations using the IPROP code have suggested that ion SPT is possible. These results have prompted initial experiments to investigate SPT of ion beams. A 100-kA, 1.2-MeV, 3-cm-radius proton beam, generated on the Gamble II pulsed-power accelerator at NRL, has been injected into helium in the 30- to 250-mTorr regime to study this phenomenon. Evidence of self-pinched ion beam transport was observed in the 35- to 80-mTorr SPT pressure window predicted by IPROP. Measured signals from a time- and space-resolved scattered proton diagnostic and a time-integrated Li(Cu) nuclear activation diagnostic, both of which measure protons striking a 10-cm diameter target 50 cm into the transport region, are significantly larger in this pressure window than expected for ballistic transport. These results are consistent with significant self-magnetic fields and self-pinching of the ion beam. On the other hand, time-integrated signals from these same two diagnostics are consistent with ballistic transport at pressures above and below the SPT window. Interferometric electron line-density measurements, acquired during beam injection into the helium gas, show insignificant ionization below 35 mTorr, a rapidly rising ionization fraction with pressure in the SPT window, and a plateau in ionization fraction at about 2% for pressures above 80 mTorr. These and other results are consistent with the physical picture for SPT. IPROP simulations, which closely model the Gamble II experimental conditions, produce results that are in qualitative agreement with the experimental results. The advantages of SPT for

Intense pulsed ion beams for fusion applications

International Nuclear Information System (INIS)

Humphries, S. Jr.

1980-04-01

The subject of this review paper is the field of intense pulsed ion beam generation and the potential application of the beams to fusion research. Considerable progress has been made over the past six years. The ion injectors discussed utilize the introduction of electrons into vacuum acceleration gaps in conjunction with high voltage pulsed power technology to achieve high output current. Power levels from injectors exceeding 1000 MW/cm 2 have been obtained for pulse lengths on the order of 10 -7 sec. The first part of the paper treats the physics and technology of intense ion beams. The second part is devoted to applications of intense ion beams in fusion research. A number of potential uses in magnetic confinement systems have been proposed

Spatial control of cell attachment, proliferation, and differentiation using ion-beam induced thin films

International Nuclear Information System (INIS)

Tanaka, Toshiyuki; Suzuki, Yoshiaki

2014-01-01

Highlights: • Cellular films can be obtained ion-beam irradiation and cell culture. • Film shapes were controlled by patterned irradiation. • Cellular films were firmly attached each other. • Tubular constructions were fabricated by wide-patterned irradiation. • Nerve growth direction was controlled by varying the pattern widths. - Abstract: In this study, cellular films were fabricated by ion-beam irradiation into poly-L-lactic acid sheets and cell culture. The cellular film shapes can be controlled by pattern masks. We performed spatial cell patterning using three types of cells: fibroblasts, endothelial cells, and nerve-like cells. First, multi-layered cellular construct was fabricated by stacking fibroblast cellular films. When three cellular films were stacked and incubated, these films firmly attached to each other. Second, tubular constructs were fabricated by endothelial cell culture on linearly patterned surfaces with wide widths of 80, 120, 160, and 200 μm. The patterned cellular films were rounded into vessel-like structure. The diameters of the constructs depend upon the pattern widths. Finally, we controlled cell attachment and nerve growth of nerve-like cells by using linearly patterned surfaces with narrow widths of 10, 30, and 50 μm. Nerve growth direction was controlled by varying the pattern widths. In the case of 10 μm, the attached cells and nerve growth were straight on the patterned thin films. These cell patterning techniques are expected to have applications in tissue engineering, cell transplantation, and in vitro tissue modeling

Revised data taking schedule with ion beams

CERN Document Server

Gazdzicki, Marek; Aduszkiewicz, A; Andrieu, B; Anticic, T; Antoniou, N; Argyriades, J; Asryan, A G; Baatar, B; Blondel, A; Blumer, J; Boldizsar, L; Bravar, A; Brzychczyk, J; Bubak, A; Bunyatov, S A; Choi, K U; Christakoglou, P; Chung, P; Cleymans, J; Derkach, D A; Diakonos, F; Dominik, W; Dumarchez, J; Engel, R; Ereditato, A; Feofilov, G A; Fodor, Z; Ferrero, A; Gazdzicki, M; Golubeva, M; Grebieszkow, K; Grzeszczuk, A; Guber, F; Hasegawa, T; Haungs, A; Igolkin, S; Ivanov, A S; Ivashkin, A; Kadija, K; Katrynska, N; Kielczewska, D; Kikola, D; Kisiel, J; Kobayashi, T; Kolesnikov, V I; Kolev, D; Kolevatov, R S; Kondratiev, V P; Kowalski, S; Kurepin, A; Lacey, R; Laszlo, A; Lyubushkin, V V; Majka, Z; I Malakhov, A; Marchionni, A; Marcinek, A; Maris, I; Matveev, V; Melkumov, G L; Meregaglia, A; Messina, M; Mijakowski, P; Mitrovski, M; Montaruli, T; Mrówczynski, St; Murphy, S; Nakadaira, T; Naumenko, P A; Nikolic, V; Nishikawa, K; Palczewski, T; Pálla, G; Panagiotou, A D; Peryt, W; Planeta, R; Pluta, J; Popov, B A; Posiadala, M; Przewlocki, P; Rauch, W; Ravonel, M; Renfordt, R; Röhrich, D; Rondio, E; Rossi, B; Roth, M; Rubbia, A; Rybczynski, M; Sadovskii, A; Sakashita, K; Schuster, T; Sekiguchi, T; Seyboth, P; Shibata, M; Sissakian, A N; Skrzypczak, E; Slodkowski, M; Sorin, A S; Staszel, P; Stefanek, G; Stepaniak, J; Strabel, C; Ströbele, H; Susa, T; Szentpétery, I; Szuba, M; Tada, M; Taranenko, A; Tsenov, R; Ulrich, R; Unger, M; Vassiliou, M; Vechernin, V V; Vesztergombi, G; Wlodarczyk, Z; Wojtaszek, A; Zipper, W; CERN. Geneva. SPS and PS Experiments Committee; SPSC

2009-01-01

This document presents the revised data taking schedule of NA61 with ion beams. The revision takes into account limitations due to the new LHC schedule as well as final results concerning the physics performance with secondary ion beams. It is proposed to take data with primary Ar and Xe beams in 2012 and 2014, respectively, and to test and use for physics a secondary B beam from primary Pb beam fragmentation in 2010, 2011 and 2013.

The emittance of high current heavy ion beams

International Nuclear Information System (INIS)

White, N.R.; Devaney, A.S.

1989-01-01

Ion implantation is the main application for high current heavy ion beams. Transfer ratio is defined as the ratio of the total ion current leaving the ion source to the current delivered to the endstation. This ratio is monitored and logged and its importance is explained. It is also affected by other factors, such as the isotopic and molecular composition of the total ion beam. The transfer ratio reveals the fraction of ions which are intercepted by parts of the beamline system. The effects of these ions are discussed in two categories: processing purity and reliability. In discussing the emittance of ribbon beams, the two orthogonal planes are usually considered separately. Longitudinal emittance is determined by slot length and by plasma ion temperature. It has already been revealed that the longitudinal divergence of the beams from BF3 is perhaps double that of the beam from arsenic vapour or argon, at the same total perveance from the ion source. This poses the question: why is the ion temperature higher for BF3 than for As or Ar? The transverse emittance is in practical terms dominated by the divergence. It is the most fruitful area for improvement in most real-world systems. There is an intrinsic divergence arising from initial ion energies within the plasma, and there is emittance growth that can occur as a result of aberration in the beam extraction optics. (N.K.)

Characterization of ion beam induced nanostructures

International Nuclear Information System (INIS)

Ghatak, J.; Satpati, B.; Umananda, M.; Kabiraj, D.; Som, T.; Dev, B.N.; Akimoto, K.; Ito, K.; Emoto, T.; Satyam, P.V.

2006-01-01

Tailoring of nanostructures with energetic ion beams has become an active area of research leading to the fundamental understanding of ion-solid interactions at nanoscale regime and with possible applications in the near future. Rutherford backscattering spectrometry (RBS), high resolution transmission electron microscopy (HRTEM) and asymmetric X-ray Bragg-rocking curve experimental methods have been used to characterize ion-induced effects in nanostructures. The possibility of surface and sub-surface/interface alloying at nano-scale regime, ion-beam induced embedding, crater formation, sputtering yield variations for systems with isolated nanoislands, semi-continuous and continuous films of noble metals (Au, Ag) deposited on single crystalline silicon will be reviewed. MeV-ion induced changes in specified Au-nanoislands on silicon substrate are tracked as a function of ion fluence using ex situ TEM. Strain induced in the bulk silicon substrate surface due to 1.5 MeV Au 2+ and C 2+ ion beam irradiation is determined by using HRTEM and asymmetric Bragg X-ray rocking curve methods. Preliminary results on 1.5 MeV Au 2+ ion-induced effects in nanoislands of Co deposited on silicon substrate will be discussed

Surface characterization after subaperture reactive ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Miessler, Andre; Arnold, Thomas; Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

2010-07-01

In usual ion beam etching processes using inert gas (Ar, Xe, Kr..) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF{sub 4}+O{sub 2}) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products. During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

A high charge state heavy ion beam source for heavy ion fusion

International Nuclear Information System (INIS)

Eylon, S.; Henestroza, E.

1996-01-01

A high current, low emittance, high charge state heavy ion beam source is being developed. This is designed to deliver a heavy ion fusion (HIF) driver accelerator scale beam. Using a high charge state beam in a driver accelerator for HIF may increase the acceleration efficiency, leading to a reduction in the driver accelerator size and cost. The proposed source system, which consists of a gas beam electron stripper followed by a high charge state beam separator, can be added to existing single charge state, low emittance, high brightness ion sources and injectors. We shall report on the source physics design using 3D beam simulations and experimental feasibility study results using a neutral gas stripper and a beam separator at the exit of the LBL 2 MV injector. (orig.)

Ion beam processing of bio-ceramics

International Nuclear Information System (INIS)

Ektessabi, A.M.

1995-01-01

Thin films of bio-inert (TiO 2+α , Al 2 O 3+α ) and bio-active (compounds of calcium and phosphorus oxides, hydroxy-apatite) were deposited on the most commonly used implant materials such as titanium and stainless steel, using a dual-ion-beam deposition system. Rutherford backscattering spectroscopy was carried out for quantitative measurement of the interfacial atomic mixing and the composition of the elements. The experimental results show that by controlling the ion beam energy and current, thin films with very good mechanical properties are obtained as a result of the ion beam mixing within the film and at the interface of the film and substrate. (orig.)

Ion beam processing of bio-ceramics

Science.gov (United States)

Ektessabi, A. M.

1995-05-01

Thin films of bio-inert (TiO 2+α, Al 2O 3+α) and bio-active (compounds of calcium and phosphorus oxides, hydroxyapatite) were deposited on the most commonly used implant materials such as titanium and stainless steel, using a dual-ion-beam deposition system. Rutherford backscattering spectroscopy was carried out for quantitative measurement of the interfacial atomic mixing and the composition of the elements. The experimental results show that by controlling the ion beam energy and current, thin films with very good mechanical properties are obtained as a result of the ion beam mixing within the film and at the interface of the film and substrate.

Performance of positive ion based high power ion source of EAST neutral beam injector

International Nuclear Information System (INIS)

Hu, Chundong; Xie, Yahong; Xie, Yuanlai; Liu, Sheng; Xu, Yongjian; Liang, Lizhen; Jiang, Caichao; Li, Jun; Liu, Zhimin

2016-01-01

The positive ion based source with a hot cathode based arc chamber and a tetrode accelerator was employed for a neutral beam injector on the experimental advanced superconducting tokamak (EAST). Four ion sources were developed and each ion source has produced 4 MW @ 80 keV hydrogen beam on the test bed. 100 s long pulse operation with modulated beam has also been tested on the test bed. The accelerator was upgraded from circular shaped to diamond shaped in the latest two ion sources. In the latest campaign of EAST experiment, four ion sources injected more than 4 MW deuterium beam with beam energy of 60 keV into EAST

Direct nano-patterning of graphene with helium ion beams

Energy Technology Data Exchange (ETDEWEB)

Naitou, Y., E-mail: yu-naitou@aist.go.jp [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Iijima, T.; Ogawa, S. [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba 305-8569 (Japan)

2015-01-19

Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO{sub 2}/Si substrates. This technique involves irradiation of the sample with accelerated helium ions (He{sup +}). Doses of 2.0 × 10{sup 16 }He{sup + }cm{sup −2} from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of He{sup +} in a non-monotonic fashion. Increasing the dose from 2.0 × 10{sup 16} to 5.0 × 10{sup 16 }He{sup + }cm{sup −2} improved the spatial resolution to several tens of nanometers. However, doses greater than 1.0 × 10{sup 17 }He{sup + }cm{sup −2} degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices.

Design and fabrication of an ion accelerator for TFTR-type neutral beam systems

International Nuclear Information System (INIS)

Paterson, J.A.; Duffy, T.J.; Haughian, J.M.; Biagi, L.A.; Yee, D.P.

1977-10-01

The design of the prototype 120-keV, 65-A, 0.5-sec ion accelerator for TFTR-type beam systems is described. Details of the manufacture of the constituent parts are given along with descriptions of the major components of the accelerator. Included are the molybdenum grid structures, molybdenum shields, stainless steel hats and the epoxy insulator. Specific manufacturing problems are discussed along with the results of tests to determine the voltage holding capabilities of the assembly

Generation of an intense ion beam by a pinched relativistic electron beam

International Nuclear Information System (INIS)

Gilad, P.; Zinamon, Z.

1976-01-01

The pinched electron beam of a pulsed electron accelerator is used to generate an intense beam of ions. A foil anode and vacuum drift tube are used. The space charge field of the pinched beam in the tube accelerates ions from the foil anode. Ion currents of 10 kA at a density of 5kA/cm 2 with pulse length of 50 ns are obtained using a 5 kJ, 450 kV, 3 Ω diode. (author)

Superconducting accelerating structures for very low velocity ion beams

Directory of Open Access Journals (Sweden)

J. Xu

2008-03-01

Full Text Available This paper presents designs for four types of very-low-velocity superconducting (SC accelerating cavity capable of providing several MV of accelerating potential per cavity, and suitable for particle velocities in the range 0.006ion beams. SC linacs can be formed as an array of independently phased cavities, enabling a variable velocity profile to maximize the output energy for each of a number of different ion species. Several laboratories in the U.S. and Europe are planning exotic beam facilities based on SC linacs. The cavity designs presented here are intended for the front end of such linacs, particularly for the postacceleration of rare isotopes of low charge state. Several types of SC cavities have been developed recently to cover particle velocities above 0.06c. Superconducting four-gap quarter-wave resonators for velocities 0.008<β=v/c<0.05 were developed about two decades ago and have been successfully operated at the ATLAS SC linac at Argonne National Laboratory. Since that time, progress in simulation tools, cavity fabrication, and processing have increased SC cavity gradients by a factor of 3–4. This paper applies these tools to optimize the design of a four-gap quarter-wave resonator for exotic beam facilities and other low-velocity applications.

Superconducting accelerating structures for very low velocity ion beams

Energy Technology Data Exchange (ETDEWEB)

Xu, J.; Shepard, K.W.; Ostroumov, P.N.; Fuerst, J.D.; Waldschmidt, G.; /Argonne; Gonin, I.V.; /Fermilab

2008-01-01

This paper presents designs for four types of very-low-velocity superconducting accelerating cavity capable of providing several MV of accelerating potential per cavity, and suitable for particle velocities in the range 0.006 < v/c < 0.06. Superconducting TEM-class cavities have been widely applied to CW acceleration of ion beams. SC linacs can be formed as an array of independently-phased cavities, enabling a variable velocity profile to maximize the output energy for each of a number of different ion species. Several laboratories in the US and Europe are planning exotic beam facilities based on SC linacs. The cavity designs presented here are intended for the front-end of such linacs, particularly for the post-acceleration of rare isotopes of low charge state. Several types of SC cavities have been developed recently to cover particle velocities above 0.06c. Superconducting four-gap quarter-wave resonators for velocities 0.008 < {beta} = v/c < 0.05 were developed about two decades ago and have been successfully operated at the ATLAS SC linac at Argonne National Laboratory. Since that time, progress in simulation tools, cavity fabrication and processing have increased SC cavity gradients by a factor of 3-4. This paper applies these tools to optimize the design of a four-gap quarter-wave resonator for exotic beam facilities and other low-velocity applications.

Resolution Improvement and Pattern Generator Development for the Maskless Micro-Ion-Beam Reduction Lithography System

International Nuclear Information System (INIS)

Jiang, Ximan

2006-01-01

The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

A pencil beam algorithm for helium ion beam therapy

Energy Technology Data Exchange (ETDEWEB)

Fuchs, Hermann; Stroebele, Julia; Schreiner, Thomas; Hirtl, Albert; Georg, Dietmar [Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); PEG MedAustron, 2700 Wiener Neustadt (Austria); Department of Nuclear Medicine, Medical University of Vienna, 1090 Vienna (Austria); Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria)

2012-11-15

Purpose: To develop a flexible pencil beam algorithm for helium ion beam therapy. Dose distributions were calculated using the newly developed pencil beam algorithm and validated using Monte Carlo (MC) methods. Methods: The algorithm was based on the established theory of fluence weighted elemental pencil beam (PB) kernels. Using a new real-time splitting approach, a minimization routine selects the optimal shape for each sub-beam. Dose depositions along the beam path were determined using a look-up table (LUT). Data for LUT generation were derived from MC simulations in water using GATE 6.1. For materials other than water, dose depositions were calculated by the algorithm using water-equivalent depth scaling. Lateral beam spreading caused by multiple scattering has been accounted for by implementing a non-local scattering formula developed by Gottschalk. A new nuclear correction was modelled using a Voigt function and implemented by a LUT approach. Validation simulations have been performed using a phantom filled with homogeneous materials or heterogeneous slabs of up to 3 cm. The beams were incident perpendicular to the phantoms surface with initial particle energies ranging from 50 to 250 MeV/A with a total number of 10{sup 7} ions per beam. For comparison a special evaluation software was developed calculating the gamma indices for dose distributions. Results: In homogeneous phantoms, maximum range deviations between PB and MC of less than 1.1% and differences in the width of the distal energy falloff of the Bragg-Peak from 80% to 20% of less than 0.1 mm were found. Heterogeneous phantoms using layered slabs satisfied a {gamma}-index criterion of 2%/2mm of the local value except for some single voxels. For more complex phantoms using laterally arranged bone-air slabs, the {gamma}-index criterion was exceeded in some areas giving a maximum {gamma}-index of 1.75 and 4.9% of the voxels showed {gamma}-index values larger than one. The calculation precision of the

Status of radioactive ion beams at the HRIBF

CERN Document Server

Stracener, D W

2003-01-01

Radioactive Ion Beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF) are produced using the isotope separation on-line technique and are subsequently accelerated up to a few MeV per nucleon for use in nuclear physics experiments. The first RIB experiments at the HRIBF were completed at the end of 1998 using sup 1 sup 7 F beams. Since then other proton-rich ion beams have been developed and a large number of neutron-rich ion beams are now available. The neutron-rich radioactive nuclei are produced via proton-induced fission of uranium in a low-density matrix of uranium carbide. Recently developed RIBs include sup 2 sup 5 Al from a silicon carbide target and isobarically pure beams of neutron-rich Ge, Sn, Br and I isotopes from a uranium carbide target.

Preliminary results of spatially resolved ECR ion beam profile investigations

International Nuclear Information System (INIS)

Panitzsch, L.; Stalder, M.; Wimmer-Schweingruber, R.F.

2012-01-01

The profile of an ion beam produced in an Electron Cyclotron Resonance Ion Source (ECRIS) can vary greatly depending on the source settings and the ion-optical tuning. Strongly focussed ion beams form circular structures (hollow beams) as predicted by simulations and observed in experiments. Each of the rings is predicted to be dominated by ions with same or at least similar m/q-ratios due to ion-optical effects. To check this we performed a series of preliminary investigations to test the required tuning capabilities of our ion source. This includes beam focussing (A) and beam steering (B) using a 3D-movable extraction. Having tuned the source to deliver a beam of strongly focussed ions of different ion species and having steered this beam to match the transmittance area of the sector magnet we also recorded the ion charge state distribution of the strongly focussed beam profile at different, spatially limited positions (C). The preliminary results will be introduced within this paper: it appears that our 3D-movable extraction is very efficient to steer and to focus the beam strongly. The paper is followed by the slides of the presentation. (authors)

Edge effect correction using ion beam figuring.

Science.gov (United States)

Yang, Bing; Xie, Xuhui; Li, Furen; Zhou, Lin

2017-11-10

The edge effect is regarded as one of the most difficult technical issues for fabricating large primary mirrors, as it can greatly reduce the key performance of the optical system. Ion beam figuring (IBF) has the advantage of no edge effect, so we can use it to remove high points on the edge and improve surface accuracy. The edge local correction method (ELCM) of IBF processes only the surface edge zone, and is very different from the current full caliber figuring method (FCFM). Therefore, it is necessary to study the ELCM of IBF. In this paper, the key factors of ELCM are analyzed, such as dwell time algorithm, edge data extension methods, and the outward dimension of the starting figuring point. At the same time, the distinctions between ELCM and FCFM are compared. Finally, a 142 mm diameter fused silica mirror is fabricated to verify the validity of the theoretical of ELCM. The experimental results indicate that the figuring precision and efficiency can be obviously improved by ELCM.

Collective ion acceleration by relativistic electron beams in plasmas

International Nuclear Information System (INIS)

Galvez, M.; Gisler, G.

1991-01-01

A two-dimensional fully electromagnetic particle-in-cell code is used to simulate the interaction of a relativistic electron beam injected into a finite-size background neutral plasma. The simulations show that the background electrons are pushed away from the beam path, forming a neutralizing ion channel. Soon after the beam head leaves the plasma, a virtual cathode forms which travels away with the beam. However, at later times a second, quasi-stationary, virtual cathode forms. Its position and strength depends critically on the parameters of the system which critically determines the efficiency of the ion acceleration process. The background ions trapped in the electrostatic well of the virtual cathode are accelerated and at later times, the ions as well as the virtual cathode drift away from the plasma region. The surfing of the ions in the electrostatic well produces an ion population with energies several times the initial electron beam energy. It is found that optimum ion acceleration occurs when the beam-to-plasma density ratio is near unity. When the plasma is dense, the beam is a weak perturbation and accelerates few ions, while when the plasma is tenuous, the beam is not effectively neutralized, and a virtual cathode occurs right at the injection plane. The simulations also show that, at the virtual cathode position, the electron beam is pinched producing a self-focusing phenomena

Electrical properties of Ga ion beam implanted GaAs epilayer

International Nuclear Information System (INIS)

Hirayama, Yoshiro; Okamoto, Hiroshi

1985-01-01

Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n + and p + GaAs epilayers. For originally n + epilayers, this resistivity enhancement is maintained after annealing as high as 800 deg C. However this enhancement disappears after annealing at above 650 deg C for p + epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 μm or less, and is attractive for a device fabrication process to electrically isolate integrated elements. (author)

Mechanisms of material removal and mass transport in focused ion beam nanopore formation

Energy Technology Data Exchange (ETDEWEB)

Das, Kallol, E-mail: das7@illinois.edu; Johnson, Harley T., E-mail: htj@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, MC-244, Urbana, Illinois 61801 (United States); Freund, Jonathan B., E-mail: jbfreund@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, MC-244, Urbana, Illinois 61801 (United States); Department of Aerospace Engineering, University of Illinois at Urbana-Champaign, 306 Talbot Laboratory, MC-236, 104 South Wright Street Urbana, Illinois 61801 (United States)

2015-02-28

Despite the widespread use of focused ion beam (FIB) processing as a material removal method for applications ranging from electron microscope sample preparation to nanopore processing for DNA sequencing, the basic material removal mechanisms of FIB processing are not well understood. We present the first complete atomistic simulation of high-flux FIB using large-scale parallel molecular dynamics (MD) simulations of nanopore fabrication in freestanding thin films. We focus on the root mechanisms of material removal and rearrangement and describe the role of explosive boiling in forming nanopores. FIB nanopore fabrication is typically understood to occur via sputter erosion. This can be shown to be the case in low flux systems, where individual ion impacts are sufficiently separated in time that they may be considered as independent events. But our detailed MD simulations show that in high flux FIB processing, above a threshold level at which thermal effects become significant, the primary mechanism of material removal changes to a significantly accelerated, thermally dominated process. Under these conditions, the target is heated by the ion beam faster than heat is conducted away by the material, leading quickly to melting, and then continued heating to nearly the material critical temperature. This leads to explosive boiling of the target material with spontaneous bubble formation and coalescence. Mass is rapidly rearranged at the atomistic scale, and material removal occurs orders of magnitude faster than would occur by simple sputtering. While the phenomenology is demonstrated computationally in silicon, it can be expected to occur at lower beam fluxes in other cases where thermal conduction is suppressed due to material properties, geometry, or ambient thermal conditions.

Ion traps fabricated in a CMOS foundry

Energy Technology Data Exchange (ETDEWEB)

Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

Ions kinematics in an electrostatic ion beam trap

Energy Technology Data Exchange (ETDEWEB)

Attia, D

2004-06-01

In this study, I have tried to provide a better understanding of the dynamics of ions inside an electrostatic ion beam trap. The electrostatic ion trap allows to store ions moving between two electrostatic mirrors. Although the trap has been developed already seven years ago, no direct measurement of the transversal velocity distribution of the ions has been performed. Such quantity is central for understanding the conditions under which a beam should be produced (mainly emittance) in order to be trapped by such a device. The data I have obtained during the course of this work are based on an experimental technique which relies on the direct imaging of the particles exiting the trap, as well as on numerical simulations of the ion trajectories inside the trap. I have personally been involved in the hardware development of the imaging system, the data acquisition and analysis of the data as well as il all numerical calculations presented here. These results allow us to obtain, for the first time, experimental information on the transverse phase space of the trap, and contribute to the overall understanding of the ion motion in this system. (author)

Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

2014-10-30

Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

Pulsed high current ion beam processing equipment

International Nuclear Information System (INIS)

Korenev, S.A.; Perry, A.

1995-01-01

A pulsed high voltage ion source is considered for use in ion beam processing for the surface modification of materials, and deposition of conducting films on different substrates. The source consists of an Arkad'ev-Marx high voltage generator, a vacuum ion diode based on explosive ion emission, and a vacuum chamber as substrate holder. The ion diode allows conducting films to be deposited from metal or allow sources, with ion beam mixing, onto substrates held at a pre-selected temperature. The main variables can be set in the ranges: voltage 100-700 kV, pulse length 0.3 μs, beam current 1-200 A depending on the ion chosen. The applications of this technology are discussed in semiconductor, superconductor and metallizing applications as well as the direction of future development and cost of these devices for commercial application. 14 refs., 6 figs

Mutation induction by ion beams in arabidopsis

International Nuclear Information System (INIS)

Tanaka, Atsushi

1999-01-01

An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M 1 lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by γirradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and γ-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

Mutation induction by ion beams in arabidopsis

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1999-07-01

An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M{sub 1} lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by {gamma}irradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and {gamma}-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

BEARS: Radioactive ion beams at LBNL

International Nuclear Information System (INIS)

Powell, J.; Guo, F.Q.; Haustein, P.E.

1998-01-01

BEARS (Berkeley Experiments with Accelerated Radioactive Species) is an initiative to develop a radioactive ion-beam capability at Lawrence Berkeley National Laboratory. The aim is to produce isotopes at an existing medical cyclotron and to accelerate them at the 88 inch Cyclotron. To overcome the 300-meter physical separation of these two accelerators, a carrier-gas transport system will be used. At the terminus of the capillary, the carrier gas will be separated and the isotopes will be injected into the 88 inch Cyclotron's Electron Cyclotron Resonance (ECR) ion source. The first radioactive beams to be developed will include 20-min 11 C and 70-sec 14 O, produced by (p,n) and (p,α) reactions on low-Z targets. A test program is currently being conducted at the 88 inch Cyclotron to develop the parts of the BEARS system. Preliminary results of these tests lead to projections of initial 11 C beams of up to 2.5 x 10 7 ions/sec and 14 O beams of 3 x 10 5 ions/sec

Polarization Studies in Fast-Ion Beam Spectroscopy

International Nuclear Information System (INIS)

Trabert, E

2001-01-01

In a historical review, the observations and the insight gained from polarization studies of fast ions interacting with solid targets are presented. These began with J. Macek's recognition of zero-field quantum beats in beam-foil spectroscopy as indicating alignment, and D.G. Ellis' density operator analysis that suggested the observability of orientation when using tilted foils. Lastly H. Winter's studies of the ion-beam surface interaction at grazing incidence yielded the means to produce a high degree of nuclear orientation in ion beams

Uses of laser optical pumping to produce polarized ion beams

International Nuclear Information System (INIS)

Anderson, L.W.

1983-01-01

Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H - or 3 He - ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams

Recent US advances in ion-beam-driven high energy density physics and heavy ion fusion

International Nuclear Information System (INIS)

Logan, B.G.; Bieniosek, F.M.; Celata, C.M.; Coleman, J.; Greenway, W.; Henestroza, E.; Kwan, J.W.; Lee, E.P.; Leitner, M.; Roy, P.K.; Seidl, P.A.; Vay, J.-L.; Waldron, W.L.; Yu, S.S.; Barnard, J.J.; Cohen, R.H.; Friedman, A.; Grote, D.P.; Kireeff Covo, M.; Molvik, A.W.; Lund, S.M.; Meier, W.R.; Sharp, W.; Davidson, R.C.; Efthimion, P.C.; Gilson, E.P.; Grisham, L.; Kaganovich, I.D.; Qin, H.; Sefkow, A.B.; Startsev, E.A.; Welch, D.; Olson, C.

2007-01-01

During the past two years, significant experimental and theoretical progress has been made in the US heavy ion fusion science program in longitudinal beam compression, ion-beam-driven warm dense matter, beam acceleration, high brightness beam transport, and advanced theory and numerical simulations. Innovations in longitudinal compression of intense ion beams by >50X propagating through background plasma enable initial beam target experiments in warm dense matter to begin within the next two years. We are assessing how these new techniques might apply to heavy ion fusion drivers for inertial fusion energy

Variable-spot ion beam figuring

International Nuclear Information System (INIS)

Wu, Lixiang; Qiu, Keqiang; Fu, Shaojun

2016-01-01

This paper introduces a new scheme of ion beam figuring (IBF), or rather variable-spot IBF, which is conducted at a constant scanning velocity with variable-spot ion beam collimated by a variable diaphragm. It aims at improving the reachability and adaptation of the figuring process within the limits of machine dynamics by varying the ion beam spot size instead of the scanning velocity. In contrast to the dwell time algorithm in the conventional IBF, the variable-spot IBF adopts a new algorithm, which consists of the scan path programming and the trajectory optimization using pattern search. In this algorithm, instead of the dwell time, a new concept, integral etching time, is proposed to interpret the process of variable-spot IBF. We conducted simulations to verify its feasibility and practicality. The simulation results indicate the variable-spot IBF is a promising alternative to the conventional approach.

Beam dynamics of mixed high intensity highly charged ion Beams in the Q/A selector

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.H., E-mail: zhangxiaohu@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Yuan, Y.J.; Yin, X.J.; Qian, C.; Sun, L.T. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Du, H.; Li, Z.S.; Qiao, J.; Wang, K.D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, H.W.; Xia, J.W. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2017-06-11

Electron cyclotron resonance (ECR) ion sources are widely used in heavy ion accelerators for their advantages in producing high quality intense beams of highly charged ions. However, it exists challenges in the design of the Q/A selection systems for mixed high intensity ion beams to reach sufficient Q/A resolution while controlling the beam emittance growth. Moreover, as the emittance of beam from ECR ion sources is coupled, the matching of phase space to post accelerator, for a wide range of ion beam species with different intensities, should be carefully studied. In this paper, the simulation and experimental results of the Q/A selection system at the LECR4 platform are shown. The formation of hollow cross section heavy ion beam at the end of the Q/A selector is revealed. A reasonable interpretation has been proposed, a modified design of the Q/A selection system has been committed for HIRFL-SSC linac injector. The features of the new design including beam simulations and experiment results are also presented.

Ion beam heating for fast ignition

International Nuclear Information System (INIS)

Gus'kov, S.Yu.; Limpouch, J.; Klimo, O.

2010-01-01

Complete text of publication follows. The characteristics features of the formation of the spatial distribution of the energy transferred to the plasma from a beam of ions with different initial energies, masses and charges under fast ignition conditions are determined. The motion of the Bragg peak is extended with respect to the spatial distribution of the temperature of the ion-beam-heated medium. The parameters of the ion beams are determined to initiate different regimes of fast ignition of thermonuclear fuel precompressed to a density of 300-500 g/cm 3 - the edge regime, in which the ignition region is formed at the outer boundary of the fuel, and the internal regime, in which the ignition region is formed in central parts of the fuel. The conclusion on the requirements for fast ignition by light and heavy ion beams is presented. It is shown that the edge heating with negative temperature gradient is described by a self-similar solution. Such a temperature distribution is the reason of the fact that the ignited beam energy at the edge heating is larger than the minimal ignition energy by factor 1.65. The temperature Bragg peak may be produced by ion beam heating in the reactor scale targets with pR-parameter larger than 3-4 g/cm 2 . In particular, for central ignition of the targets with pR-parameters in the range of 4-8 g/cm 2 the ion beam energy should be, respectively, from 5 to 7 times larger than the minimal ignition energy. The work by S.Ye. Gus'kov, D.V. Il'in, and V.E. Sherman was supported by the Ministry of Education and Science of the Russian Federation under the program 'Development of the Scientific Potential of High Education for 2009-2010' (project no. 2.1.1/1505) and the Russian Foundation for Basic Research (project no. 08-02-01394 a ). The work by J. Limpouch and O. Klimo was supported by the Czech Ministry of Education (project no. LC528, MSM6840770022).

Ion-optical studies for a range adaptation method in ion beam therapy using a static wedge degrader combined with magnetic beam deflection

International Nuclear Information System (INIS)

Chaudhri, Naved; Saito, Nami; Bert, Christoph; Franczak, Bernhard; Steidl, Peter; Durante, Marco; Schardt, Dieter; Rietzel, Eike

2010-01-01

Fast radiological range adaptation of the ion beam is essential when target motion is mitigated by beam tracking using scanned ion beams for dose delivery. Electromagnetically controlled deflection of a well-focused ion beam on a small static wedge degrader positioned between two dipole magnets, inside the beam delivery system, has been considered as a fast range adaptation method. The principle of the range adaptation method was tested in experiments and Monte Carlo simulations for the therapy beam line at the GSI Helmholtz Centre for Heavy Ions Research. Based on the simulations, ion optical settings of beam deflection and realignment of the adapted beam were experimentally applied to the beam line, and additional tuning was manually performed. Different degrader shapes were employed for the energy adaptation. Measured and simulated beam profiles, i.e. lateral distribution and range in water at isocentre, were analysed and compared with the therapy beam values for beam scanning. Deflected beam positions of up to ±28 mm on degrader were performed which resulted in a range adaptation of up to ±15 mm water equivalence (WE). The maximum deviation between the measured adapted range from the nominal range adaptation was below 0.4 mm WE. In experiments, the width of the adapted beam at the isocentre was adjustable between 5 and 11 mm full width at half maximum. The results demonstrate the feasibility/proof of the proposed range adaptation method for beam tracking from the beam quality point of view.

Beam optics study of a negative ion source for neutral beam injection application at ASIPP

Energy Technology Data Exchange (ETDEWEB)

Wei, Jiang-Long; Liang, Li-Zhen [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Jiang, Cai-Chao [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Graduate school, University of Science and Technology of China, Hefei 230026 (China); Xie, Ya-Hong, E-mail: xieyh@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Hu, Chun-Dong; Li, Jun; Gu, Yu-Ming; Chen, Yu-Qian [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Li, Jing-Yong; Wu, Ming-Shan [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Graduate school, University of Science and Technology of China, Hefei 230026 (China)

2017-04-15

In order to study the generation and extraction of negative ions for neutral beam injection application, a negative ion source is being designed and constructed at Institute of Plasma Physics, Chinese Academy of Sciences (ASIPP). Through a four electrode grids system inside the accelerator, a negative ion beam will be extracted and accelerated up to −60 kV on a reduced scale extraction area of 12 × 50 cm{sup 2} (the area of PG apertures is 185 cm{sup 2}). The beam optics is a key issue for the accelerator design, and greatly determine the source experimental performance in term of beam current, heat load on the grid, beam divergence, and so on. In this paper, the trajectories of electrons and negative ions were simulated in the electrode grids of the negative ion source. The filter capability of electron deflection magnet on the co-extracted electrons is evaluated and confirmed. The negative ion beam optics was designed according to the calculated results of beam divergence and beam radius along the beamlet in different acceleration voltages. The deflection effect of the electron deflection magnet on the negative ion beam was investigated in the single beamlet case and multi-beamlets case.

Ion beam collimating grid to reduce added defects

Science.gov (United States)

Lindquist, Walter B.; Kearney, Patrick A.

2003-01-01

A collimating grid for an ion source located after the exit grid. The collimating grid collimates the ion beamlets and disallows beam spread and limits the beam divergence during transients and steady state operation. The additional exit or collimating grid prevents beam divergence during turn-on and turn-off and prevents ions from hitting the periphery of the target where there is re-deposited material or from missing the target and hitting the wall of the vessel where there is deposited material, thereby preventing defects from being deposited on a substrate to be coated. Thus, the addition of a collimating grid to an ion source ensures that the ion beam will hit and be confined to a specific target area.

Ion Dynamics at Shocks: Ion Reflection and Beam Formation at Quasi-perpendicular Shocks

International Nuclear Information System (INIS)

Kucharek, Harald; Moebius, Eberhard

2005-01-01

The physics of collisionless shocks is controlled by the ion dynamics. The generation of gyrating ions by reflection as well as the formation of field-aligned ion beams are essential parts of this dynamic. On the one hand reflection is most likely the first interaction of ions with the shock before they undergo the downstream thermalization process. On the other hand field-aligned ion beams, predominately found at the quasi-perpendicular bow shock, propagate into the distant foreshock region and may create wave activity. We revisit ion reflection, the source and basic production mechanism of field-aligned ion beams, by using multi-spacecraft measurements and contrast these observations with existing theories. Finally, we propose an alternative production mechanism

Radioactive ion beam facilities at INFN LNS

International Nuclear Information System (INIS)

Rifuggiato, D; Calabretta, L; Celona, L; Chines, F; Cosentino, L; Cuttone, G; Finocchiaro, P; Pappalardo, A; Re, M; Rovelli, A

2011-01-01

Radioactive ion beams are produced at INFN- Laboratori Nazionali del Sud (LNS) by means of the two operating accelerators, the Tandem and the Superconducting Cyclotron (CS), originally designed to accelerate stable beams. Both the ISOL (Isotope Separation On Line) and the IFF (In-Flight Fragmentation) methods are exploited to produce RIBs in two different ways at different energies: in the first case, the Cyclotron is the primary accelerator and the Tandem accelerates the secondary beams, while in the second case radioactive fragments are produced by the Cyclotron beam in a thin target with energies comparable to the primary beam energy. The ISOL facility is named EXCYT (Exotics at the Cyclotron and Tandem) and was commissioned in 2006, when the first radioactive beam ( 8 Li) has been produced. The IFF installation is named FRIBs (in Flight Radioactive Ion Beams), and it has started to produce radioactive beams in 2001, placing a thin target in the extraction beam line of the Cyclotron. The development of both facilities to produce and accelerate radioactive ion beams at LNS, is briefly described, with some details on the future prospects that are presently under consideration or realization.

Electron temperature effects for an ion beam source

International Nuclear Information System (INIS)

Uramoto, Joshin.

1979-05-01

A hydrogen high temperature plasma up to 200 eV is produced by acceleration of electrons in a hot hollow cathode discharge and is used as an ion beam source. Then, two characteristics are observed: A rate of the atomic ion (H + ) number increases above 70%. A perveance of the ion beam increases above 30 times compared with that of a cold plasma, while a floating potential of an ion acceleration electrode approaches an ion acceleration potential (- 500 V) according as an increment of the electron temperature. Moreover, a neutralized ion beam can be produced by only the negative floating electrode without an external power supply. (author)

Guiding center simulations of strong ion beams with applications to the Counterstreaming Ion Torus

International Nuclear Information System (INIS)

Tull, C.

1978-03-01

In the proposed Counterstreaming Ion Torus (CIT) steady state rather than pulsed operation may be possible if all of the plasma power density is provided by neutral beam injection. After the neutral beams have penetrated the magnetic field, strong ion beam currents are produced. A major concern with the relatively strong counterstreaming ion currents is the effect of the beam self-magnetic fields on the macroscopic equilibrium of the system. Pinching and self focusing of the individual beams may occur, or the repulsive interaction of the two oppositely directed beam currents may destroy the equilibrium entirely. We investigate this macroscopic behavior of the ion beams with a guiding center plasma particle simulation model and we describe a model we have developed to simulate steady state behavior in an ideal CIT configuration

Device Fabrication and Probing of Discrete Carbon Nanostructures

KAUST Repository

Batra, Nitin M

2015-01-01

Device fabrication on multi walled carbon nanotubes (MWCNTs) using electrical beam lithography (EBL), electron beam induced deposition (EBID), ion beam induced deposition (IBID) methods was carried out, followed by device electrical characterization

Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Gruen, D.M.; Lin, Y.P.; Schmidt, H.; Liu, Y.L.; Barr, T.; Chang, R.P.H.

1992-01-01

Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described

Multiple-ion-beam time-of-flight mass spectrometer

International Nuclear Information System (INIS)

Rohrbacher, Andreas; Continetti, Robert E.

2001-01-01

An innovative approach to increase the throughput of mass spectrometric analyses using a multiple-ion-beam mass spectrometer is described. Two sample spots were applied onto a laser desorption/ionization target and each spot was simultaneously irradiated by a beam of quadrupled Nd:YLF laser radiation (261.75 nm) to produce ions by laser-desorption ionization. Acceleration of the ions in an electric field created parallel ion beams that were focused by two parallel einzel lens systems. After a flight path of 2.34 m, the ions were detected with a microchannel plate-phosphor screen assembly coupled with a charge coupled device camera that showed two resolved ion beams. Time-of-flight mass spectra were also obtained with this detector. Experiments were performed using both metal atom cations (Ti + and Cr + ) produced by laser desorption/ionization and the molecular ions of two different proteins (myoglobin and lysozyme), created by matrix assisted laser desorption/ionization using an excess of nicotinic acid as matrix

Fabrication of ion source components by electroforming

International Nuclear Information System (INIS)

Schechter, D.E.; Sluss, F.

1983-01-01

Several components of the Oak Ridge National Laboratory (ORNL)/Magnetic Fusion Test Facility (MFTF-B) ion source have been fabricated utilizing an electroforming process. A procedure has been developed for enclosing coolant passages in copper components by electrodepositing a thick (greater than or equal to 0.75-mm) layer of copper (electroforming) over the top of grooves machined into the copper component base. Details of the procedure to fabricate acceleration grids and other ion source components are presented

Radiation effects of ion beams on polymers

International Nuclear Information System (INIS)

Tagawa, Seiichi

1993-01-01

Recent progress in the radiation effects of ion beams on polymers are reviewed briefly. Our recent work on the radiation effects of ion beams on polystyrene thin films on silicon wafers and time resolved emission studies on polymers are described. (orig.)

Neutralization principles for the Extraction and Transport of Ion Beams

CERN Document Server

Riege, H

2000-01-01

The strict application of conventional extraction techniques of ion beams from a plasma source is characterized by a natural intensity limit determined by space charge.The extracted current may be enhanced far beyond this limit by neutralizing the space charge of the extracted ions in the first extraction gap of the source with electrons injected from the opposite side. The transverse and longitudinal emittances of a neutralized ion beam, hence its brightness, are preserved. Results of beam compensation experiments, which have been carried out with a laser ion source, are resumed for proposing a general scheme of neutralizing ion sources and their adjacent low-energy beam transport channels with electron beams. Many technical applications of high-mass ion beam neutralization technology may be identified: the enhancement of ion source output for injection into high-intensity, low-and high-energy accelerators, or ion thrusters in space technology, for the neutral beams needed for plasma heating of magnetic conf...

Drag of ballistic electrons by an ion beam

Energy Technology Data Exchange (ETDEWEB)

Gurevich, V. L.; Muradov, M. I., E-mail: mag.muradov@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2015-12-15

Drag of electrons of a one-dimensional ballistic nanowire by a nearby one-dimensional beam of ions is considered. We assume that the ion beam is represented by an ensemble of heavy ions of the same velocity V. The ratio of the drag current to the primary current carried by the ion beam is calculated. The drag current turns out to be a nonmonotonic function of velocity V. It has a sharp maximum for V near v{sub nF}/2, where n is the number of the uppermost electron miniband (channel) taking part in conduction and v{sub nF} is the corresponding Fermi velocity. This means that the phenomenon of ion beam drag can be used for investigation of the electron spectra of ballistic nanostructures. We note that whereas observation of the Coulomb drag between two parallel quantum wires may in general be complicated by phenomena such as tunneling and phonon drag, the Coulomb drag of electrons of a one-dimensional ballistic nanowire by an ion beam is free of such spurious effects.

Rotating light ion beam-plasma system in inertial confinement fusion

International Nuclear Information System (INIS)

Murakami, H.; Okada, T.

1997-01-01

The stabilizing mechanism of filamentation instability in light ion beam propagation is studied numerically by using a particle-in-cell code. Rotating light ion beam scheme has been proposed for the light ion beam propagation. The filamentation instability is stabilized by the external magnetic field which is induced by the rotating light ion beams. From a dispersion relation, linear growth rates of filamentation instabilities are obtained in a light ion beam-plasma system with an external magnetic field. The theory and simulation comparisons illustrate the results. (author)

Ion beam induced luminescence from diamond using an MeV ion microprobe

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A.A.; Jamieson, D. N.; Prawer, S.; Allen, M.G. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1993-12-31

Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

Ion beam induced luminescence from diamond using an MeV ion microprobe

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A A; Jamieson, D N; Prawer, S; Allen, M G [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1994-12-31

Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

Development of Emittance Analysis Software for Ion Beam Characterization

International Nuclear Information System (INIS)

Padilla, M.J.; Liu, Yuan

2007-01-01

Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a figure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally, a high-quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifield Radioactive Ion Beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profiles, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fitting are also incorporated into the software. The software will provide a simplified, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate

DEVELOPMENT OF EMITTANCE ANALYSIS SOFTWARE FOR ION BEAM CHARACTERIZATION

Energy Technology Data Exchange (ETDEWEB)

Padilla, M. J.; Liu, Y.

2007-01-01

Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a fi gure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally a high quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifi eld Radioactive Ion beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profi les, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fi tting are also incorporated into the software. The software will provide a simplifi ed, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate.

Integrated polarization beam splitter with relaxed fabrication tolerances.

Science.gov (United States)

Pérez-Galacho, D; Halir, R; Ortega-Moñux, A; Alonso-Ramos, C; Zhang, R; Runge, P; Janiak, K; Bach, H-G; Steffan, A G; Molina-Fernández, Í

2013-06-17

Polarization handling is a key requirement for the next generation of photonic integrated circuits (PICs). Integrated polarization beam splitters (PBS) are central elements for polarization management, but their use in PICs is hindered by poor fabrication tolerances. In this work we present a fully passive, highly fabrication tolerant polarization beam splitter, based on an asymmetrical Mach-Zehnder interferometer (MZI) with a Si/SiO(2) Periodic Layer Structure (PLS) on top of one of its arms. By engineering the birefringence of the PLS we are able to design the MZI arms so that sensitivities to the most critical fabrication errors are greatly reduced. Our PBS design tolerates waveguide width variations of 400nm maintaining a polarization extinction ratio better than 13dB in the complete C-Band.

Materials Science with Ion Beams

CERN Document Server

Bernas, Harry

2010-01-01

This book introduces materials scientists and designers, physicists and chemists to the properties of materials that can be modified by ion irradiation or implantation. These techniques can help design new materials or to test modified properties; novel applications already show that ion-beam techniques are complementary to others, yielding previously unattainable properties. Also, ion-beam interactions modify materials at the nanoscale, avoiding the often detrimental results of lithographic or chemical techniques. Here, the effects are related to better-known quasi-equilibrium thermodynamics, and the consequences to materials are discussed with concepts that are familiar to materials science. Examples addressed concern semiconductor physics, crystal and nanocluster growth, optics, magnetism, and applications to geology and biology.

High harmonic ion cyclotron heating in DIII-D: Beam ion absorption and sawtooth stabilization

International Nuclear Information System (INIS)

Heidbrink, W.W.; Fredrickson, E.D.; Mau, T.K.; Petty, C.C.; Pinsker, R.I.; Porkolab, M.; Rice, B.W.

1999-01-01

Combined neutral beam injection and fast wave heating at the fourth cyclotron harmonic produce an energetic deuterium beam ion tail in the DIII-D tokamak. When the concentration of thermal hydrogen exceeds ∼ 5%, the beam ion absorption is suppressed in favour of second harmonic hydrogen absorption. As theoretically expected, the beam absorption increases with beam ion gyro-radius; also, central absorption at the fifth harmonic is weaker than central absorption at the fourth harmonic. For central heating at the fourth harmonic, an energetic, perpendicular, beam population forms inside the q = 1 surface. The beam ion tail transiently stabilizes the sawtooth instability but destabilizes toroidicity induced Alfven eigenmodes (TAEs). Saturation of the central heating correlates with the onset of the TAEs. Continued expansion of the q = 1 radius eventually precipitates a sawtooth crash; complete magnetic reconnection is observed. (author)

Barium ion beam. Annual progress report

International Nuclear Information System (INIS)

Lazar, N.; Dandl, R.; Rynn, N.; Wickham, M.

1985-01-01

The barium ion beam Zeeman diagnostic is an in situ nonperturbing diagnostic designed to measure both the plasma electric and magnetic fields in devices such as STM and EBT. The diagnostic satisfies the requirements of high precision, spatial resolution and nonperturbation of the plasma. The technique uses resonance absorption of light from a single moded laser in a beam of energetic barium ions to measure the Zeeman effect in the absorption spectrum (to measure changes in the magnetic field) and to observe the changes in beam velocity by the Doppler shift of the absorption lines

Experimental studies with radioactive ion beams

International Nuclear Information System (INIS)

Sastry, D.L.; Sree Krishna Murty, G.; Chandrasekhar Rao, M.V.S.

1991-01-01

The sources of information presented are essentially taken from the papers reported at several international seminars and those appeared in the Journal of Nuclear Instruments and Methods in Physics Research. Production and usage of radioactive ion beams (RIB) in research have received the attention of scientists all over the world during the past six years. The first radioactive ion beams ( 19 Ne) were produced at Bevalac for the purpose of medical research using a primary beam of energy 800 MeV/a.m.u. (author). 19 refs., 2 figs., 3 tabs

Enhanced light trapping by focused ion beam (FIB) induced self-organized nanoripples on germanium (100) surface

Science.gov (United States)

Kamaliya, Bhaveshkumar; Mote, Rakesh G.; Aslam, Mohammed; Fu, Jing

2018-03-01

In this paper, we demonstrate enhanced light trapping by self-organized nanoripples on the germanium surface. The enhanced light trapping leading to high absorption of light is confirmed by the experimental studies as well as the numerical simulations using the finite-difference time-domain method. We used gallium ion (Ga+) focused ion beam to enable the formation of the self-organized nanoripples on the germanium (100) surface. During the fabrication, the overlap of the scanning beam is varied from zero to negative value and found to influence the orientation of the nanoripples. Evolution of nanostructures with the variation of beam overlap is investigated. Parallel, perpendicular, and randomly aligned nanoripples with respect to the scanning direction are obtained via manipulation of the scanning beam overlap. 95% broadband absorptance is measured in the visible electromagnetic region for the nanorippled germanium surface. The reported light absorption enhancement can significantly improve the efficiency of germanium-silicon based photovoltaic systems.

Production of intensive negative lithium beam with caesium sputter-type ion source

Science.gov (United States)

Lobanov, Nikolai R.

2018-01-01

Compounds of lithium oxide, hydroxide and carbonate, mixed with silver, were prepared for use as a cathode in caesium-sputter ion source. The intention was to determine the procedure which would produce the highest intensity negative lithium beams over extended period and with maximum stability. The chemical composition and properties of the samples were analysed using mass-spectrometry, optical microscopy, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Analyses (EDX) and Raman spectroscopy. These analyses showed that the chemical transformations with components resulted from pressing, storage and bake out were qualitatively in agreement with expectations. Intensive negative lithium ion beams >1 μA were delivered using cathodes fabricated from materials with multicomponent chemical composition when the following conditions were met: (i) use of components with moderate enthalpy of formation; (ii) low moisture content at final stage of cathode production and (iii) small concentration of water molecules in hydrate phase in the cathode mixture.

Advanced characterization of materials using swift ion beams

Energy Technology Data Exchange (ETDEWEB)

Tabacniks, Manfredo H. [Universidade de Sao Paulo (USP), SP (Brazil)

2011-07-01

Swift ion beams are powerful non destructive tools for material analysis especially thin films. In spite of their high energy, usually several MeV/u, little energy is deposited by the ion on the sample. Energetic ions also use to stop far away (or outside) the inspected volume, hence producing negligible damage to the sample. Ion beam methods provide quantitative trace element analysis of any atomic element (and some isotopes) in a sample and are able to yield elemental depth profiles with spatial resolution of the order of 10mm. Relying on nuclear properties of the atoms, these methods are insensitive to the chemical environment of the element, consequently not limited by matrix effects. Ion beam methods are multielemental, can handle insulating materials, are quick (an analysis usually takes less than 15 minutes), and need little (if any) sample preparation. Ion beams are also sensitive to surface roughness and sample porosity and can be used to quickly inspect these properties in a sample. The Laboratory for Ion Beam Analysis of the University of Sao Paulo, LAMFI, is a multi-user facility dedicated to provide Ion Beam Methods like PIXE, RBS, FRS and NRA techniques for the analysis of materials and thin films. Operating since 1994, LAMFI is being used mostly by many researchers from within and outside USP, most of them non specialists in ion beam methods, but in need of ion beam analysis to carry out their research. At LAMFI, during the last 9 years, more than 50% of the accelerator time was dedicated to analysis, usually PIXE or RBS. 21% was down time and about 14% of the time was used for the development of ion beam methods which includes the use of RBS for roughness characterization exploring the shading of the beam by structures on the surface and by modeling the RBS spectrum as the product of a normalized RBS spectrum and a height density distribution function of the surface. Single element thick target PIXE analysis is being developed to obtain the thin

Advanced characterization of materials using swift ion beams

International Nuclear Information System (INIS)

Tabacniks, Manfredo H.

2011-01-01

Swift ion beams are powerful non destructive tools for material analysis especially thin films. In spite of their high energy, usually several MeV/u, little energy is deposited by the ion on the sample. Energetic ions also use to stop far away (or outside) the inspected volume, hence producing negligible damage to the sample. Ion beam methods provide quantitative trace element analysis of any atomic element (and some isotopes) in a sample and are able to yield elemental depth profiles with spatial resolution of the order of 10mm. Relying on nuclear properties of the atoms, these methods are insensitive to the chemical environment of the element, consequently not limited by matrix effects. Ion beam methods are multielemental, can handle insulating materials, are quick (an analysis usually takes less than 15 minutes), and need little (if any) sample preparation. Ion beams are also sensitive to surface roughness and sample porosity and can be used to quickly inspect these properties in a sample. The Laboratory for Ion Beam Analysis of the University of Sao Paulo, LAMFI, is a multi-user facility dedicated to provide Ion Beam Methods like PIXE, RBS, FRS and NRA techniques for the analysis of materials and thin films. Operating since 1994, LAMFI is being used mostly by many researchers from within and outside USP, most of them non specialists in ion beam methods, but in need of ion beam analysis to carry out their research. At LAMFI, during the last 9 years, more than 50% of the accelerator time was dedicated to analysis, usually PIXE or RBS. 21% was down time and about 14% of the time was used for the development of ion beam methods which includes the use of RBS for roughness characterization exploring the shading of the beam by structures on the surface and by modeling the RBS spectrum as the product of a normalized RBS spectrum and a height density distribution function of the surface. Single element thick target PIXE analysis is being developed to obtain the thin

Cladding-like waveguide fabricated by cooperation of ultrafast laser writing and ion irradiation: characterization and laser generation.

Science.gov (United States)

Lv, Jinman; Shang, Zhen; Tan, Yang; Vázquez de Aldana, Javier Rodríguez; Chen, Feng

2017-08-07

We report the surface cladding-like waveguide fabricated by the cooperation of the ultrafast laser writing and the ion irradiation. The ultrafast laser writes tracks near the surface of the Nd:YAG crystal, constructing a semi-circle columnar structure with a decreased refractive index of - 0.00208. Then, the Nd:YAG crystal is irradiated by the Carbon ion beam, forming an enhanced-well in the semi-circle columnar with an increased refractive index of + 0.0024. Tracks and the enhanced-well consisted a surface cladding-like waveguide. Utilizing this cladding-like waveguide as the gain medium for the waveguide lasing, optimized characterizations were observed compared with the monolayer waveguide. This work demonstrates the refractive index of the Nd:YAG crystal can be well tailored by the cooperation of the ultrafast laser writing and the ion irradiation, which provides an convenient way to fabricate the complex and multilayered photonics devices.

Sawtooth activity of the ion cloud in an electron-beam ion trap

International Nuclear Information System (INIS)

Radtke, R.; Biedermann, C.

2003-01-01

The dynamics of an ensemble of highly charged Ar and Ba ions in an electron-beam ion trap (EBIT) was studied by recording time-resolved x-ray spectra emitted from trapped ions. Sawtoothlike signatures manifest in the spectra for a variety of EBIT operating conditions indicating a sudden collapse of the ion inventory in the trap. The collapse occurs on a time scale of approximately 100 ms and the evolution of the sawteeth is very sensitive to parameters such as electron-beam current and axial trap depth. Analysis of the measurements is based on a time-dependent calculation of the trapping process showing that sawtooth activity is caused by the feedback between the low-Z argon and high-Z barium ions. This unexpected behavior demonstrates the importance of nonlinear effects in electron-beam traps containing more than a single ion species

Intense electron and ion beams

CERN Document Server

Molokovsky, Sergey Ivanovich

2005-01-01

Intense Ion and Electron Beams treats intense charged-particle beams used in vacuum tubes, particle beam technology and experimental installations such as free electron lasers and accelerators. It addresses, among other things, the physics and basic theory of intense charged-particle beams; computation and design of charged-particle guns and focusing systems; multiple-beam charged-particle systems; and experimental methods for investigating intense particle beams. The coverage is carefully balanced between the physics of intense charged-particle beams and the design of optical systems for their formation and focusing. It can be recommended to all scientists studying or applying vacuum electronics and charged-particle beam technology, including students, engineers and researchers.

The influence of beam divergence on ion-beam induced surface patterns

International Nuclear Information System (INIS)

Kree, R.; Yasseri, T.; Hartmann, A.K.

2009-01-01

We present a continuum theory and a Monte Carlo model of self-organized surface pattern formation by ion-beam sputtering including effects of beam profiles. Recently, it has turned out that such secondary ion-beam parameters may have a strong influence on the types of emerging patterns. We first discuss several cases, for which beam profiles lead to random parameters in the theory of pattern formation. Subsequently we study the evolution of the averaged height profile in continuum theory and find that the typical Bradley-Harper scenario of dependence of ripple patterns on the angle of incidence can be changed qualitatively. Beam profiles are implemented in Monte Carlo simulations, where we find generic effects on pattern formation. Finally, we demonstrate that realistic beam profiles, taken from experiments, may lead to qualitative changes of surface patterns.

Optics of ion beams for the neutral beam injection system on HL-2A Tokamak

Energy Technology Data Exchange (ETDEWEB)

Zou, G. Q.; Lei, G. J.; Cao, J. Y.; Duan, X. R. [Southwestern Institute of Physics, Chengdu, 610041 (China)

2012-07-15

The ion beam optics for the neutral beam injection system on HL-2A Tokomak is studied by two- dimensional numerical simulation program firstly, where the emitting surface is taken at 100 Debye lengths from the plasma electrode. The mathematical formulation, computation techniques are described. Typical ion orbits, equipotential contours, and emittance diagram are shown. For a fixed geometry electrode, the effect of plasma density, plasma potential and plasma electron temperature on ion beam optics is examined, and the calculation reliability is confirmed by experimental results. In order to improve ion beam optics, the application of a small pre-acceleration voltage ({approx}100 V) between the plasma electrode and the arc discharge anode is reasonable, and a lower plasma electron temperature is desired. The results allow optimization of the ion beam optics in the neutral beam injection system on HL-2A Tokomak and provide guidelines for designing future neutral beam injection system on HL-2M Tokomak.

Optics of ion beams for the neutral beam injection system on HL-2A Tokamak.

Science.gov (United States)

Zou, G Q; Lei, G J; Cao, J Y; Duan, X R

2012-07-01

The ion beam optics for the neutral beam injection system on HL-2A Tokomak is studied by two- dimensional numerical simulation program firstly, where the emitting surface is taken at 100 Debye lengths from the plasma electrode. The mathematical formulation, computation techniques are described. Typical ion orbits, equipotential contours, and emittance diagram are shown. For a fixed geometry electrode, the effect of plasma density, plasma potential and plasma electron temperature on ion beam optics is examined, and the calculation reliability is confirmed by experimental results. In order to improve ion beam optics, the application of a small pre-acceleration voltage (∼100 V) between the plasma electrode and the arc discharge anode is reasonable, and a lower plasma electron temperature is desired. The results allow optimization of the ion beam optics in the neutral beam injection system on HL-2A Tokomak and provide guidelines for designing future neutral beam injection system on HL-2M Tokomak.

Coherent electromagnetic radiation of a combined electron-ion beam

Energy Technology Data Exchange (ETDEWEB)

Pankratov, S G; Samoshenkov, Yu K [Vsesoyuznyj Nauchno-Issledovatel' skij Inst. Optiko-Fizicheskikh Izmerenij, Moscow (USSR)

1977-07-01

The intensity of coherent electromagnetic radiation due to interaction of a modulated electron beam with a modulated ion beam is calculated. It is shown that the radiation intensity has a sharp maximum at the frequency equal to the difference of the modulation frequency of the electron and ion beams. The results obtained are compared with those corresponding to the scattering of a modulated electron beam on randomly distributed gas ions.

Electron-ion recombination in merged beams

International Nuclear Information System (INIS)

Wolf, A.; Habs, D.; Lampert, A.; Neumann, R.; Schramm, U.; Schuessler, T.; Schwalm, D.

1993-01-01

Detailed studies of recombination processes between electrons and highly charged ions have become possible by recent improvements of merged-beams experiments. We discuss in particular measurements with stored cooled ion beams at the Test Storage Ring (TSR) in Heidelberg. The cross section of dielectronic recombination was measured with high energy resolution for few-electron systems up to the nuclear charge of Cu at a relative energy up to 2.6 keV. At low energy (∼0.1 eV) total recombination rates of several ions were measured and compared with calculated radiative recombination rates. Laser-stimulated recombination of protons and of C 6+ ions was investigated as a function of the photon energy using visible radiation. Both the total recombination rates and the stimulated recombination spectra indicate that in spite of the short interaction time in merged beams, also collisional capture of electrons into weakly bound levels (related to three-body recombination) could be important

Design of a D-alpha beam-ion profile diagnostic

International Nuclear Information System (INIS)

Luo, Y.; Heidbrink, W.W.; Burrell, K.H.

2004-01-01

Injected neutral beams ionize to create a population of beam ions. As they orbit around the tokamak and pass through the heating beams, some beam ions re-neutralize and emit D-alpha light. The intensity of this emission is weak compared to the signals from the injected neutrals, the warm (halo) neutrals, and the edge recombination neutrals but, for a favorable viewing geometry, the emission is Doppler shifted away from these bright interfering signals. Preliminary data from the DIII-D tokamak show that signals from re-neutralized beam ions have already been detected. A three-channel prototype instrument consisting of a spectrometer, mask, camera lenses, and frame-transfer charge coupled device is under development for measurements of the spatial profile of the beam ions

Light ion beam transport research at NRL

International Nuclear Information System (INIS)

Hinshelwood, D.D.; Boller, J.R.; Cooperstein, G.

1996-01-01

Transport of light ion beams through low-pressure background gas is under investigation at NRL in support of the light-ion ICF program at Sandia National Laboratories. Scaling experiments and the field solver/orbit code ATHETA have been used to design and construct a focusing, extraction applied-B diode for transport experiments. An active anode source has been developed to provide a high proton fraction in the ion beam and a fast ion turn-on time. A very sensitive Zeeman diagnostic is being developed to determine the net current distribution in the beam/transport system. Both analytical and numerical techniques using several codes are being applied to transport modeling, leading to the capability of full system studies. (author). 1 tab., 5 figs., 10 refs

Light ion beam transport research at NRL

Energy Technology Data Exchange (ETDEWEB)

Hinshelwood, D D; Boller, J R; Cooperstein, G [Naval Research Lab., Washington, DC (United States). Plasma Physics Div.; and others

1997-12-31

Transport of light ion beams through low-pressure background gas is under investigation at NRL in support of the light-ion ICF program at Sandia National Laboratories. Scaling experiments and the field solver/orbit code ATHETA have been used to design and construct a focusing, extraction applied-B diode for transport experiments. An active anode source has been developed to provide a high proton fraction in the ion beam and a fast ion turn-on time. A very sensitive Zeeman diagnostic is being developed to determine the net current distribution in the beam/transport system. Both analytical and numerical techniques using several codes are being applied to transport modeling, leading to the capability of full system studies. (author). 1 tab., 5 figs., 10 refs.

An overview of the facilities, activities, and developments at the University of North Texas Ion Beam Modification and Analysis Laboratory (IBMAL)

Science.gov (United States)

Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Pandey, Bimal; Deoli, Naresh T.; Lakshantha, Wickramaarachchige J.; Mulware, Stephen J.; Baxley, Jacob; Manuel, Jack E.; Pacheco, Jose L.; Szilasi, Szabolcs; Weathers, Duncan L.; Reinert, Tilo; Glass, Gary A.; Duggan, Jerry L.; McDaniel, Floyd D.

2013-07-01

The Ion Beam Modification and Analysis Laboratory (IBMAL) at the University of North Texas includes several accelerator facilities with capabilities of producing a variety of ion beams from tens of keV to several MeV in energy. The four accelerators are used for research, graduate and undergraduate education, and industrial applications. The NEC 3MV Pelletron tandem accelerator has three ion sources for negative ions: He Alphatross and two different SNICS-type sputter ion sources. Presently, the tandem accelerator has four high-energy beam transport lines and one low-energy beam transport line directly taken from the negative ion sources for different research experiments. For the low-energy beam line, the ion energy can be varied from ˜20 to 80 keV for ion implantation/modification of materials. The four post-acceleration beam lines include a heavy-ion nuclear microprobe; multi-purpose PIXE, RBS, ERD, NRA, and broad-beam single-event upset; high-energy ion implantation line; and trace-element accelerator mass spectrometry. The NEC 3MV single-ended Pelletron accelerator has an RF ion source mainly for hydrogen, helium and heavier inert gases. We recently installed a capacitive liner to the terminal potential stabilization system for high terminal voltage stability and high-resolution microprobe analysis. The accelerator serves a beam line for standard RBS and RBS/C. Another beamline for high energy focused ion beam application using a magnetic quadrupole lens system is currently under construction. This beam line will also serve for developmental work on an electrostatic lens system. The third accelerator is a 200 kV Cockcroft-Walton accelerator with an RF ion source. The fourth accelerator is a 2.5 MV Van de Graaff accelerator, which was in operation for last several decades is currently planned to be used mainly for educational purpose. Research projects that will be briefly discussed include materials synthesis/modification for photonic, electronic, and

An overview of the facilities, activities, and developments at the University of North Texas Ion Beam Modification and Analysis Laboratory (IBMAL)

Energy Technology Data Exchange (ETDEWEB)

Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Pandey, Bimal; Deoli, Naresh T.; Lakshantha, Wickramaarachchige J.; Mulware, Stephen J.; Baxley, Jacob; Manuel, Jack E.; Pacheco, Jose L.; Szilasi, Szabolcs; Weathers, Duncan L.; Reinert, Tilo; Glass, Gary A.; Duggan, Jerry L.; McDaniel, Floyd D. [Ion Beam Modification and Analysis Laboratory, University of North Texas, Department of Physics, 1155 Union Circle 311427, Denton, Texas 76203 (United States)

2013-07-03

The Ion Beam Modification and Analysis Laboratory (IBMAL) at the University of North Texas includes several accelerator facilities with capabilities of producing a variety of ion beams from tens of keV to several MeV in energy. The four accelerators are used for research, graduate and undergraduate education, and industrial applications. The NEC 3MV Pelletron tandem accelerator has three ion sources for negative ions: He Alphatross and two different SNICS-type sputter ion sources. Presently, the tandem accelerator has four high-energy beam transport lines and one low-energy beam transport line directly taken from the negative ion sources for different research experiments. For the low-energy beam line, the ion energy can be varied from {approx}20 to 80 keV for ion implantation/modification of materials. The four post-acceleration beam lines include a heavy-ion nuclear microprobe; multi-purpose PIXE, RBS, ERD, NRA, and broad-beam single-event upset; high-energy ion implantation line; and trace-element accelerator mass spectrometry. The NEC 3MV single-ended Pelletron accelerator has an RF ion source mainly for hydrogen, helium and heavier inert gases. We recently installed a capacitive liner to the terminal potential stabilization system for high terminal voltage stability and high-resolution microprobe analysis. The accelerator serves a beam line for standard RBS and RBS/C. Another beamline for high energy focused ion beam application using a magnetic quadrupole lens system is currently under construction. This beam line will also serve for developmental work on an electrostatic lens system. The third accelerator is a 200 kV Cockcroft-Walton accelerator with an RF ion source. The fourth accelerator is a 2.5 MV Van de Graaff accelerator, which was in operation for last several decades is currently planned to be used mainly for educational purpose. Research projects that will be briefly discussed include materials synthesis/modification for photonic, electronic, and