Measurement of metal/carbon nanotube contact resistance by adjusting contact length using laser ablation

Energy Technology Data Exchange (ETDEWEB)

Lan Chun; Srisungsitthisunti, Pornsak; Amama, Placidus B; Fisher, Timothy S; Xu Xianfan; Reifenberger, Ronald G [Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States)], E-mail: lan0@physics.purdue.edu

2008-03-26

A technique of measuring contact resistance between an individual nanotube and a deposited metallic film is described. Using laser ablation to sequentially shorten the contact length between a nanotube and the evaporated metallic film, the linear resistivity of the nanotube as well as the specific contact resistivity between the nanotube and metallic film can be determined. This technique can be generally used to measure the specific contact resistance that develops between a metallic film and a variety of different nanowires and nanotubes.

The Colibactin Genotoxin Generates DNA Interstrand Cross-Links in Infected Cells

Directory of Open Access Journals (Sweden)

Nadège Bossuet-Greif

2018-03-01

Full Text Available Colibactins are hybrid polyketide-nonribosomal peptides produced by Escherichia coli, Klebsiella pneumoniae, and other Enterobacteriaceae harboring the pks genomic island. These genotoxic metabolites are produced by pks-encoded peptide-polyketide synthases as inactive prodrugs called precolibactins, which are then converted to colibactins by deacylation for DNA-damaging effects. Colibactins are bona fide virulence factors and are suspected of promoting colorectal carcinogenesis when produced by intestinal E. coli. Natural active colibactins have not been isolated, and how they induce DNA damage in the eukaryotic host cell is poorly characterized. Here, we show that DNA strands are cross-linked covalently when exposed to enterobacteria producing colibactins. DNA cross-linking is abrogated in a clbP mutant unable to deacetylate precolibactins or by adding the colibactin self-resistance protein ClbS, confirming the involvement of the mature forms of colibactins. A similar DNA-damaging mechanism is observed in cellulo, where interstrand cross-links are detected in the genomic DNA of cultured human cells exposed to colibactin-producing bacteria. The intoxicated cells exhibit replication stress, activation of ataxia-telangiectasia and Rad3-related kinase (ATR, and recruitment of the DNA cross-link repair Fanconi anemia protein D2 (FANCD2 protein. In contrast, inhibition of ATR or knockdown of FANCD2 reduces the survival of cells exposed to colibactin-producing bacteria. These findings demonstrate that DNA interstrand cross-linking is the critical mechanism of colibactin-induced DNA damage in infected cells.

Electro-thermal analysis of contact resistance

Science.gov (United States)

Pandey, Nitin; Jain, Ishant; Reddy, Sudhakar; Gulhane, Nitin P.

2018-05-01

Electro-Mechanical characterization over copper samples are performed at the macroscopic level to understand the dependence of electrical contact resistance and temperature on surface roughness and contact pressure. For two different surface roughness levels of samples, six levels of load are selected and varied to capture the bulk temperature rise and electrical contact resistance. Accordingly, the copper samples are modelled and analysed using COMSOLTM as a simulation package and the results are validated by the experiments. The interface temperature during simulation is obtained using Mikic-Elastic correlation and by directly entering experimental contact resistance value. The load values are varied and then reversed in a similar fashion to capture the hysteresis losses. The governing equations & assumptions underlying these models and their significance are examined & possible justification for the observed variations are discussed. Equivalent Greenwood model is also predicted by mapping the results of the experiment.

Effect of Contact Pressure on the Resistance Contact Value and Temperature Changes in Copper Busbar Connection

Directory of Open Access Journals (Sweden)

Agus Risdiyanto

2012-12-01

Full Text Available This paper discussed the influence of tightness or contacts pressure on copper busbar joints to determine changes in the value of the initial contact resistance and the maximum temperature at the joint due to high current load. The test sample was copper busbar 3 x 30 mm with configuration of bolted overlapping joint. Increasing contact pressure at the joint was measured to find out its effect on the value of contact resistance. The applied pressure was 6 to 36 MPa. Procedure of contact resistance measurement refer to the ASTM B539 standard using four-wire method. The sample subsequently loaded with the current of 350 A for 60 minutes and the maximum temperature at the joint was measured. The result showed that increasing contact pressure at the busbar joint will reduce the contact resistance and maximum temperature. The increase of contact pressure from 6 to 30 MPa causes decreasing contact resistance from 16 μΩ to 11 μΩ. Further increasing of contact pressure more than 30 MPa did not affect the contact resistance significantly. The lowest temperatur of busbar joint of 54°C was reached at a contact pressure of 36 Mpa.

Method of separate determination of high-ohmic sample resistance and contact resistance

Directory of Open Access Journals (Sweden)

Vadim A. Golubiatnikov

2015-09-01

Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

The effect of electrode contact resistance and capacitive coupling on Complex Resistivity measurements

DEFF Research Database (Denmark)

Ingeman-Nielsen, Thomas

2006-01-01

The effect of electrode contact resistance and capacitive coupling on complex resistivity (CR) measurements is studied in this paper. An equivalent circuit model for the receiver is developed to describe the effects. The model shows that CR measurements are severely affected even at relatively lo...... with the contact resistance artificially increased by resistors. The results emphasize the importance of keeping contact resistance low in CR measurements....

Bias dependent specic contact resistance of phase change material to metal contacts

NARCIS (Netherlands)

Roy, Deepu; in 't Zandt, Micha; Wolters, Robertus A.M.

2010-01-01

Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for scaling, device modeling and optimization of phase change random access memory (PCRAM) cells. In this article, we report the systematic determination of the speci_c contact resistance (_c) with

Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

Science.gov (United States)

Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

2018-03-01

Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

Theory of equilibria of elastic 2-braids with interstrand interaction

Science.gov (United States)

Starostin, E. L.; van der Heijden, G. H. M.

2014-03-01

Motivated by continuum models for DNA supercoiling we formulate a theory for equilibria of 2-braids, i.e., structures formed by two elastic rods winding around each other in continuous contact and subject to a local interstrand interaction. No assumption is made on the shape of the contact curve. The theory is developed in terms of a moving frame of directors attached to one of the strands. The other strand is tracked by including in this frame the normalised closest-approach chord connecting the two strands. The kinematic constant-distance constraint is formulated at strain level through the introduction of what we call braid strains. As a result the total potential energy involves arclength derivatives of these strains, thus giving rise to a second-order variational problem. The Euler-Lagrange equations for this problem give balance equations for the overall braid force and moment referred to the moving frame as well as differential equations that can be interpreted as effective constitutive relations encoding the effect that the second strand has on the first as the braid deforms under the action of end loads. Hard contact models are used to obtain the normal contact pressure between strands that has to be non-negative for a physically realisable solution without the need for external devices such as clamps or glue to keep the strands together. The theory is first illustrated by a number of problems that can be solved analytically and then applied to several new problems that have not hitherto been treated.

Temperature dependence of contact resistance at metal/MWNT interface

Energy Technology Data Exchange (ETDEWEB)

Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com [Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803 (Korea, Republic of)

2016-07-11

Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

The Effect of CuSn Intermetallics on the Interstrand Contact Resistance in Superconducting Cables for the Large Hadron Collider (LHC)

CERN Document Server

Scheuerlein, C; Jacob, P; Leroy, D; Oberli, L R; Taborelli, M

2005-01-01

The LHC superconducting cables are submitted to a 200°C heat-treatment in air in order to increase the resistance between the crossing strands (RC) within the cable. During this treatment the as-applied Sn-Ag alloy strand coating is transformed into a CuSn intermetallic compound layer. The microstructure, the surface topography and the surface chemistry of the non-reacted and reacted coatings have been characterised by different techniques, notably focused ion beam (FIB), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). Based on the results obtained by these techniques the different influences that the intermetallics have on RC are discussed. The desired RC is obtained only when a continuous Cu3Sn layer is formed, i.e. a sufficient wetting of the Cu substrate by the tinning alloy is crucial. Among other effects the formation of the comparatively hard intermetallics roughens the surface and, thus, reduces the true contact area and i...

Resistance switching in silver - manganite contacts

International Nuclear Information System (INIS)

Gomez-Marlasca, F; Levy, P

2009-01-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Resistance switching in silver - manganite contacts

Energy Technology Data Exchange (ETDEWEB)

Gomez-Marlasca, F [Materia Condensada GIA GAIANN CAC -CNEA, and Instituto de Nanociencia y Nanotecnologia, CNEA, Gral Paz 1499 (1650) San Martin, Pcia. Buenos Aires (Argentina); Levy, P, E-mail: levy@cnea.gov.a

2009-05-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Physical model of the contact resistivity of metal-graphene junctions

Energy Technology Data Exchange (ETDEWEB)

Chaves, Ferney A., E-mail: ferneyalveiro.chaves@uab.cat; Jiménez, David [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Cummings, Aron W. [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Roche, Stephan [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

2014-04-28

While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

Physical model of the contact resistivity of metal-graphene junctions

International Nuclear Information System (INIS)

Chaves, Ferney A.; Jiménez, David; Cummings, Aron W.; Roche, Stephan

2014-01-01

While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems

Interstrand DNA crosslinking by 4,5',8-trimethylpsoralen plus monochromatic ultraviolet light

International Nuclear Information System (INIS)

Cohen, L.F.; Ewig, R.A.G.; Kohn, K.W.; Glaubiger, D.

1980-01-01

DNA crosslinking by 4,5',8-trimethylpsoralen plus monochromatic ultraviolet light of wavelength 365 nm was studied in mouse L1210 leukemia cells. DNA breaks and crosslinking were evaluated by alkaline elution of DNA from poly(vinyl chloride) filters. Trimethylpsoralen plus 365 nm light produced DNA crosslinks but not breaks. The kinetics of crosslinging were linear with respect to concentration and second-order with respect to light exposure time. The latter finding supports the proposed two photon mechanism for the formation of diadducts. In contrast to DNA crosslinking agents such as nitrogen mustard, nitrosoureas and platinums, trimethylpsoralen crosslinks were resistant to proteolytic digestion. Thus, trimethylpsoralen plus 365 nm light produced interstrand crosslinks, as proposed for a bifunctional agent binding to bases on opposite DNA strands. (Auth.)

Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires

International Nuclear Information System (INIS)

Blanchard, Paul; Bertness, Kris A; Harvey, Todd; Sanford, Norman

2014-01-01

Contact resistivity ρ c is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nanowires (NWs), measuring ρ c of contacts to NWs can be particularly challenging. In this work, Si-doped n-GaN NWs were grown by molecular beam epitaxy. Four-contact structures with 20 nm Ti/200 nm Al contacts were fabricated on individual NWs by photolithography, and the contacts were annealed to achieve ohmic behavior. Two-point resistances R 23  and four-point collinear resistances R 23collinear  were measured between the middle two contacts on each NW. These resistances were then modeled by taking into account the non-uniform distribution of current flow along the length of each contact. Contrary to the assumption that the resistance difference R 23 −R 23collinear  is equal to the total contact resistance R c , the distributed-current-flow contact model shows that R 23 −R 23collinear  ≪ R c when ρ c is sufficiently small. Indeed, the measured R 23 −R 23collinear  was so small in these devices that it was within the measurement uncertainty, meaning that it was not possible to directly calculate ρ c from these data. However, it was possible to calculate an upper bound on ρ c for each device based on the largest possible value of R 23 −R 23collinear . In addition, we took into account the large uncertainties in the NW transport properties by numerically maximizing ρ c with respect to the uncertainty range of each measured and assumed parameter in the contact model. The resulting upper limits on ρ c ranged from 4.2 × 10 −6  to 7.6 × 10 −6  Ω cm 2 , indicating that 20 nm Ti/200 nm Al is a good choice of ohmic contact for moderately-doped n-GaN NWs. The measurement and numerical analysis demonstrated here offer a general approach to modeling ohmic contact resistivity via NW four

Interstrand cross-links arising from strand breaks at true abasic sites in duplex DNA

OpenAIRE

Yang, Zhiyu; Price, Nathan E.; Johnson, Kevin M.; Wang, Yinsheng; Gates, Kent S.

2017-01-01

Abstract Interstrand cross-links are exceptionally bioactive DNA lesions. Endogenous generation of interstrand cross-links in genomic DNA may contribute to aging, neurodegeneration, and cancer. Abasic (Ap) sites are common lesions in genomic DNA that readily undergo spontaneous and amine-catalyzed strand cleavage reactions that generate a 2,3-didehydro-2,3-dideoxyribose sugar remnant (3?ddR5p) at the 3?-terminus of the strand break. Interestingly, this strand scission process leaves an electr...

Contact resistance at ceramic interfaces and its dependence on mechanical load

DEFF Research Database (Denmark)

Koch, Søren; Hendriksen, P.V.

2004-01-01

Low contact resistance between individual components is important for solid oxide fuel cell stacks if high performance is to be achieved. Several mechanisms may result in high contact resistance, e.g., current constriction due to low area of contact and formation of resistive phases between...... the components. In this study, the importance of current constriction due to limited area of contact at an interface is investigated by comparing the characteristics of contacts between LSM pellets with different surface finish. The load behaviour of the contact resistance has been investigated and a power law...... of the contact resistance was calculated using a simple model describing the variation of the contact area with load based on the measured surface roughness. Good agreement between the calculations and the experimentally observed resistances was found. (C) 2004 Elsevier B.V. All rights reserved....

The role of contact resistance in graphene field-effect devices

Science.gov (United States)

Giubileo, Filippo; Di Bartolomeo, Antonio

2017-08-01

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.

Bypass of a psoralen DNA interstrand cross-link by DNA polymerases beta, iota, and kappa in vitro

Science.gov (United States)

Smith, Leigh A.; Makarova, Alena V.; Samson, Laura; Thiesen, Katherine E.; Dhar, Alok; Bessho, Tadayoshi

2012-01-01

Repair of DNA inter-strand cross-links in mammalian cells involves several biochemically distinctive processes, including the release of one of the cross-linked strands and translesion DNA synthesis (TLS). In this report, we investigated in vitro TLS activity of psoralen DNA inter-strand cross-link by three DNA repair polymerases, DNA polymerase beta, kappa and iota. DNA polymerase beta is capable of bypassing a psoralen cross-link with a low efficiency. Cell extracts prepared from DNA polymerase beta knockout mouse embryonic fibroblast showed a reduced bypass activity of the psoralen cross-link and purified DNA polymerase beta restored the bypass activity. In addition, DNA polymerase iota mis-incorporated thymine across the psoralen cross-link and DNA polymerase kappa extended these mis-paired primer ends, suggesting that DNA polymerase iota may serve as an inserter and DNA polymerase kappa may play a role as an extender in the repair of psoralen DNA inter-strand cross-links. The results demonstrated here indicate that multiple DNA polymerases could participate in TLS steps in mammalian DNA inter-strand cross-link repair. PMID:23106263

Ultra-low contact resistance in graphene devices at the Dirac point

Science.gov (United States)

Anzi, Luca; Mansouri, Aida; Pedrinazzi, Paolo; Guerriero, Erica; Fiocco, Marco; Pesquera, Amaia; Centeno, Alba; Zurutuza, Amaia; Behnam, Ashkan; Carrion, Enrique A.; Pop, Eric; Sordan, Roman

2018-04-01

Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23 Ω \\cdot μ m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200 Ω \\cdot μ m was obtained under such conditions). The ‘holey’ Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m-1 at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts.

Effects of pressure and temperature on thermal contact resistance between different materials

Directory of Open Access Journals (Sweden)

Zhao Zhe

2015-01-01

Full Text Available To explore whether pressure and temperature can affect thermal contact resistance, we have proposed a new experimental approach for measurement of the thermal contact resistance. Taking the thermal contact resistance between phenolic resin and carbon-carbon composites, cuprum, and aluminum as the examples, the influence of the thermal contact resistance between specimens under pressure is tested by experiment. Two groups of experiments are performed and then an analysis on influencing factors of the thermal contact resistance is presented in this paper. The experimental results reveal that the thermal contact resistance depends not only on the thermal conductivity coefficient of materials, but on the interfacial temperature and pressure. Furthermore, the thermal contact resistance between cuprum and aluminum is more sensitive to pressure and temperature than that between phenolic resin and carbon-carbon composites.

Silicide-to-silicon specific contact resistance characterization

NARCIS (Netherlands)

Stavitski, N.

2009-01-01

The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is

Method for making low-resistivity contacts to high T/sub c/ superconductors

International Nuclear Information System (INIS)

Ekin, J.W.; Panson, A.J.; Blankenship, B.A.

1988-01-01

A method for making low-resistivity contacts to high T/sub c/ superconductors has been developed, which has achieved contact surface resistivities less than 10 μΩ cm 2 at 76 K and does not require sample heating above ∼150 0 C. This is an upper limit for the contact resistivity obtained at high current densities up to 10 2 --10 3 A/cm 2 across the contact interface. At lower measuring current densities the contact resistivities were lower and the voltage-current curve was nonlinear, having a superconducting transition character. On cooling from 295 to 76 K, the contact resistivity decreased several times, in contrast to indium solder contacts where the resistivity increased on cooling. The contacts showed consistently low resistivity and little degradation when exposed to dry air over a four-month period and when repeatedly cycled between room temperature and 76 K. The contacts are formed by sputter depositing a layer of a noble metal-silver and gold were used-on a clean superconductor surface to protect the surface and serve as a contact pad. External connections to the contact pads have been made using both solder and wire-bonding techniques

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

International Nuclear Information System (INIS)

Di Bartolomeo, A; Giubileo, F; Iemmo, L; Romeo, F; Santandrea, S; Gambardella, U

2013-01-01

We produced graphene-based field-effect transistors by contacting mono- and bi-layer graphene by sputtering Ni or Ti as metal electrodes. We performed electrical characterization of the devices by measuring their transfer and output characteristics. We clearly observed the presence of a double-dip feature in the conductance curve for Ni-contacted transistors, and we explain it in terms of charge transfer and graphene doping under the metal contacts. We also studied the contact resistance between the graphene and the metal electrodes with larger values of ∼30 kΩμm 2 recorded for Ti contacts. Importantly, we prove that the contact resistance is modulated by the back-gate voltage. (paper)

Contact resistance of ceramic interfaces between materials used for solid oxide fuel cell applications

Energy Technology Data Exchange (ETDEWEB)

Koch, S.

2002-01-01

The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may be smaller or larger than the constriction resistance. The contact resistance between pairs of three different materials were analysed (strontium doped lanthanum manganite, yttria stabilised zirconia and strontium and nickel doped lanthanum cobaltite), and the effects of temperature, atmosphere, polarisation and mechanical load on the contact resistance were investigated. The investigations revealed that the mechanical load of a ceramic contact has a high influence on the contact resistance, and generally power law dependence between the contact resistance and the mechanical load was found. The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constriction at high temperatures. The measured contact resistance was comparable to the resistance calculated on basis of the contact areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential barriers to model the observed behaviour. The current-voltage behaviour of the YSZ contact interfaces was only weakly non-linear, and could be described by 22{+-}1 barriers in series. Contact interfaces with sinterable contact layers were also investigated, and the measured contact resistance for these interfaces were more than 10 times less than for the other interfaces. (au)

The Fanconi anemia pathway promotes replication-dependent DNA interstrand cross-link repair.

Science.gov (United States)

Knipscheer, Puck; Räschle, Markus; Smogorzewska, Agata; Enoiu, Milica; Ho, The Vinh; Schärer, Orlando D; Elledge, Stephen J; Walter, Johannes C

2009-12-18

Fanconi anemia is a human cancer predisposition syndrome caused by mutations in 13 Fanc genes. The disorder is characterized by genomic instability and cellular hypersensitivity to chemicals that generate DNA interstrand cross-links (ICLs). A central event in the activation of the Fanconi anemia pathway is the mono-ubiquitylation of the FANCI-FANCD2 complex, but how this complex confers ICL resistance remains enigmatic. Using a cell-free system, we showed that FANCI-FANCD2 is required for replication-coupled ICL repair in S phase. Removal of FANCD2 from extracts inhibits both nucleolytic incisions near the ICL and translesion DNA synthesis past the lesion. Reversal of these defects requires ubiquitylated FANCI-FANCD2. Our results show that multiple steps of the essential S-phase ICL repair mechanism fail when the Fanconi anemia pathway is compromised.

Contact Resistance of Ceramic Interfaces Between Materials Used for Solid Oxide Fuel Cell Applications

DEFF Research Database (Denmark)

Koch, Søren

The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may....... The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constric-tion at high temperatures. The measured contact resistance was comparable to the resis-tance calculated on basis of the contact...... areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential...

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo

2018-04-14

The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

Instrument for measuring metal-thermoelectric semiconductor contact resistence

International Nuclear Information System (INIS)

Lanxner, M.; Nechmadi, M.; Meiri, B.; Schildkraut, I.

1979-02-01

An instrument for measuring electrical, metal-thermoelectric semiconductor contact resistance is described. The expected errors of measurement are indicated. The operation of the instrument which is based on potential traversing perpendicularly to the contact plane is illustrated for the case of contacts of palladium and bismuth telluride-based thermoelectric material

FAN1 acts with FANCI-FANCD2 to promote DNA interstrand cross-link repair.

Science.gov (United States)

Liu, Ting; Ghosal, Gargi; Yuan, Jingsong; Chen, Junjie; Huang, Jun

2010-08-06

Fanconi anemia (FA) is caused by mutations in 13 Fanc genes and renders cells hypersensitive to DNA interstrand cross-linking (ICL) agents. A central event in the FA pathway is mono-ubiquitylation of the FANCI-FANCD2 (ID) protein complex. Here, we characterize a previously unrecognized nuclease, Fanconi anemia-associated nuclease 1 (FAN1), that promotes ICL repair in a manner strictly dependent on its ability to accumulate at or near sites of DNA damage and that relies on mono-ubiquitylation of the ID complex. Thus, the mono-ubiquitylated ID complex recruits the downstream repair protein FAN1 and facilitates the repair of DNA interstrand cross-links.

Testing and Modeling of Contact Problems in Resistance Welding

DEFF Research Database (Denmark)

Song, Quanfeng

together two or three cylindrical parts as well as disc-ring pairs of dissimilar metals. The tests have demonstrated the effectiveness of the model. A theoretical and experimental study is performed on the contact resistance aiming at a more reliable model for numerical simulation of resistance welding......As a part of the efforts towards a professional and reliable numerical tool for resistance welding engineers, this Ph.D. project is dedicated to refining the numerical models related to the interface behavior. An FE algorithm for the contact problems in resistance welding has been developed...... for the formulation, and the interfaces are treated in a symmetric pattern. The frictional sliding contact is also solved employing the constant friction model. The algorithm is incorporated into the finite element code. Verification is carried out in some numerical tests as well as experiments such as upsetting...

Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

NARCIS (Netherlands)

Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

2014-01-01

For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact

Characterizations of contact and sheet resistances of vertically aligned carbon nanotube forests with intrinsic bottom contacts

Energy Technology Data Exchange (ETDEWEB)

Jiang Yingqi; Wang Pengbo; Lin Liwei, E-mail: jiangyq99@gmail.com, E-mail: lwlin@me.berkeley.edu [Mechanical Engineering Department, University of California at Berkeley (United States)

2011-09-07

Comprehensive studies on the sheet and contact resistances of vertically aligned carbon nanotube (CNT) forests with as-grown bottom contacts to the metal layer have been conducted. Using microfabrication and four distinct methods: (1) the transfer length method (TLM), (2) the contact chain method, (3) the Kelvin method, and (4) the four point probe method, we have designed multiple testing devices to characterize the resistances of CNT-forest-based devices. Experimental results show that devices based on stripe-shaped CNT forests 100 {mu}m in height and 100 {mu}m in width have a sheet resistance of approximately 100{Omega}/{open_square}. The corresponding specific contact resistance to the molybdenum layer is roughly 5 x 10{sup 4} {Omega} {mu}m{sup 2}. Consistency of the results from the four different methods validates the study. After two months of storage of the CNT forest samples in open air, less than 0.9% deviations in the resistance values were observed. We further demonstrated one application of CNT forests as an NH{sub 3} gas sensor and measured 0.5 ppm of sensing resolution with a detection response time of 1 min.

Low resistivity contacts to YBa2Cu3O(7-x) superconductors

Science.gov (United States)

Hsi, Chi-Shiung; Haertling, Gene H.

1991-01-01

Silver, gold, platinum, and palladium metals were investigated as electroding materials for the YBa2Cu3O(7-x) superconductors. Painting, embedding, and melting techniques were used to apply the electrodes. Contact resistivities were determined by: (1) type of electrode; (2) firing conditions; and (3) application method. Electrodes fired for long times exhibited lower contact resistivities than those fired for short times. Low-resistivity contacts were found for silver and gold electrodes. Silver, which made good ohmic contact to the YBa2Cu3O(7-x) superconductor with low contact resistivities was found to be the best electroding material among the materials evaluated in this investigation.

Bulk and contact resistances of gas diffusion layers in proton exchange membrane fuel cells

Science.gov (United States)

Ye, Donghao; Gauthier, Eric; Benziger, Jay B.; Pan, Mu

2014-06-01

A multi-electrode probe is employed to distinguish the bulk and contact resistances of the catalyst layer (CL) and the gas diffusion layer (GDL) with the bipolar plate (BPP). Resistances are compared for Vulcan carbon catalyst layers (CL), carbon paper and carbon cloth GDL materials, and GDLs with microporous layers (MPL). The Vulcan carbon catalyst layer bulk resistance is 100 times greater than the bulk resistance of carbon paper GDL (Toray TG-H-120). Carbon cloth (CCWP) has bulk and contact resistances twice those of carbon paper. Compression of the GDL decreases the GDL contact resistance, but has little effect on the bulk resistance. Treatment of the GDL with polytetrafluoroethylene (PTFE) increases the contact resistance, but has little effect on the bulk resistance. A microporous layer (MPL) added to the GDL decreases the contact resistance, but has little effect on the bulk resistance. An equivalent circuit model shows that for channels less than 1 mm wide the contact resistance is the major source of electronic resistance and is about 10% of the total ohmic resistance associated with the membrane electrode assembly.

Interstrand cross-links arising from strand breaks at true abasic sites in duplex DNA

Science.gov (United States)

Yang, Zhiyu; Price, Nathan E.; Johnson, Kevin M.

2017-01-01

Abstract Interstrand cross-links are exceptionally bioactive DNA lesions. Endogenous generation of interstrand cross-links in genomic DNA may contribute to aging, neurodegeneration, and cancer. Abasic (Ap) sites are common lesions in genomic DNA that readily undergo spontaneous and amine-catalyzed strand cleavage reactions that generate a 2,3-didehydro-2,3-dideoxyribose sugar remnant (3’ddR5p) at the 3’-terminus of the strand break. Interestingly, this strand scission process leaves an electrophilic α,β-unsaturated aldehyde residue embedded within the resulting nicked duplex. Here we present evidence that 3’ddR5p derivatives generated by spermine-catalyzed strand cleavage at Ap sites in duplex DNA can react with adenine residues on the opposing strand to generate a complex lesion consisting of an interstrand cross-link adjacent to a strand break. The cross-link blocks DNA replication by ϕ29 DNA polymerase, a highly processive polymerase enzyme that couples synthesis with strand displacement. This suggests that 3’ddR5p-derived cross-links have the potential to block critical cellular DNA transactions that require strand separation. LC-MS/MS methods developed herein provide powerful tools for studying the occurrence and properties of these cross-links in biochemical and biological systems. PMID:28531327

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

International Nuclear Information System (INIS)

He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

2015-01-01

We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

International Nuclear Information System (INIS)

Chiodarelli, Nicolo'; Li, Yunlong; Arstila, Kai; Richard, Olivier; Cott, Daire J; Heyns, Marc; De Gendt, Stefan; Groeseneken, Guido; Vereecken, Philippe M; Masahito, Sugiura; Kashiwagi, Yusaku

2011-01-01

Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.

Speci﬿c contact resistance of phase change materials to metal electrode

NARCIS (Netherlands)

Roy, Deepu; in 't Zandt, Micha A.A.; Wolters, Robertus A.M.

2010-01-01

For phase change random access memory (PCRAM) cells, it is important to know the contact resistance of phase change materials (PCMs) to metal electrodes at the contacts. In this letter, we report the systematic determination of the speci﬿c contact resistance (Ͽc ) of doped Sb2Te and Ge2Sb2Te5 to TiW

CoSix contact resistance after etching and ashing plasma exposure

International Nuclear Information System (INIS)

Katahira, Ken; Fukasawa, Masanaga; Kobayashi, Shoji; Takizawa, Toshifumi; Isobe, Michio; Hamaguchi, Satoshi; Nagahata, Kazunori; Tatsumi, Tetsuya

2009-01-01

The authors investigated the contact resistance fluctuation caused by CoSi x damage in plasma etching and ashing processes. They found that CoSi x layers damaged by plasma process exposure are readily oxidized when exposed to air resulting in increased resistance. They also found that the contact resistance increases more when CH 3 F is used instead of CF 4 during etching process. The lower the mass number of dominant ions becomes, the deeper the ions penetrate. Molecular dynamics simulation revealed that dissociated species from lighter ions penetrate deeper and that this stimulates deeper oxidation. They also found that contact resistance further increased by using postetch ashing plasma even in an H 2 /N 2 ashing process in which O 2 was not used. Here, too, the reason for this is that the ion penetration causes deep oxidation. They observed that the contact resistance has a linear relationship with the oxide concentration in CoSi x . This leads to the conclusion that it is essential to precisely control the ion energy as well as to properly select the ion species in the plasma process in the fabrication of next-generation semiconductor devices.

Effect of surfaces similarity on contact resistance of fractal rough surfaces under cyclic loading

Science.gov (United States)

Gao, Yuanwen; Liu, Limei; Ta, Wurui; Song, Jihua

2018-03-01

Although numerous studies have shown that contact resistance depends significantly on roughness and fractal dimension, it remains elusive how they affect contact resistance between rough surfaces. The interface similarity index is first proposed to describe the similarity of the contact surfaces, which gives a good indication of the actual contact area between surfaces. We reveal that the surfaces' similarity be an origin of contact resistance variation. The cyclic loading can increase the contact stiffness, and the contact stiffness increases with the increase of the interface similarity index. These findings explain the mechanism of surface roughness and fractal dimension on contact resistance, and also provide reference for the reliability design of the electrical connection.

Interstrand cross-links arising from strand breaks at true abasic sites in duplex DNA.

Science.gov (United States)

Yang, Zhiyu; Price, Nathan E; Johnson, Kevin M; Wang, Yinsheng; Gates, Kent S

2017-06-20

Interstrand cross-links are exceptionally bioactive DNA lesions. Endogenous generation of interstrand cross-links in genomic DNA may contribute to aging, neurodegeneration, and cancer. Abasic (Ap) sites are common lesions in genomic DNA that readily undergo spontaneous and amine-catalyzed strand cleavage reactions that generate a 2,3-didehydro-2,3-dideoxyribose sugar remnant (3'ddR5p) at the 3'-terminus of the strand break. Interestingly, this strand scission process leaves an electrophilic α,β-unsaturated aldehyde residue embedded within the resulting nicked duplex. Here we present evidence that 3'ddR5p derivatives generated by spermine-catalyzed strand cleavage at Ap sites in duplex DNA can react with adenine residues on the opposing strand to generate a complex lesion consisting of an interstrand cross-link adjacent to a strand break. The cross-link blocks DNA replication by ϕ29 DNA polymerase, a highly processive polymerase enzyme that couples synthesis with strand displacement. This suggests that 3'ddR5p-derived cross-links have the potential to block critical cellular DNA transactions that require strand separation. LC-MS/MS methods developed herein provide powerful tools for studying the occurrence and properties of these cross-links in biochemical and biological systems. © The Author(s) 2017. Published by Oxford University Press on behalf of Nucleic Acids Research.

Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

Energy Technology Data Exchange (ETDEWEB)

Shaygan, Mehrdad; Otto, Martin; Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany); Chavarin, Carlos A. [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany); Innovations for High Performance Microelectronics, IHP GmbH, Frankfurt (Oder) (Germany); Bacher, Gerd; Mertin, Wolfgang [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany)

2017-11-15

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150 C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The Effect of Tensile Hysteresis and Contact Resistance on the Performance of Strain-Resistant Elastic-Conductive Webbing

Directory of Open Access Journals (Sweden)

Tien-Wei Shyr

2011-01-01

Full Text Available To use e-textiles as a strain-resistance sensor they need to be both elastic and conductive. Three kinds of elastic-conductive webbings, including flat, tubular, and belt webbings, made of Lycra fiber and carbon coated polyamide fiber, were used in this study. The strain-resistance properties of the webbings were evaluated in stretch-recovery tests and measured within 30% strain. It was found that tensile hysteresis and contact resistance significantly influence the tensile elasticity and the resistance sensitivity of the webbings. The results showed that the webbing structure definitely contributes to the tensile hysteresis and contact resistance. The smaller the friction is among the yarns in the belt webbing, the smaller the tensile hysteresis loss. However the close proximity of the conductive yarns in flat and tubular webbings results in a lower contact resistance.

Study of the Contact Resistance of Interlaced Stainless Steel Yarns Embedded in Hybrid Woven Fabrics

Directory of Open Access Journals (Sweden)

Vasile Simona

2017-06-01

Full Text Available The contact resistance of two interlacing electro-conductive yarns embedded in a hybrid woven fabric will constitute a problem for electro-conductive textiles under certain circumstances. A high contact resistance can induce hotspots, while a variable contact resistance may cause malfunctioning of the components that are interconnected by the electro-conductive yarns. Moreover, the contact robustness should be preserved over time and various treatments such as washing or abrading should not alter the functioning of the electro-conductive textiles. The electrical resistance developed in the contact point of two interlacing electro-conductive yarns is the result of various factors. The influence of diameter of the electro-conductive stainless steel yarns, the weave pattern, the weft density, and the abrasion on the contact resistance was investigated. Hybrid polyester fabrics were produced according to the design of experiments (DoE and statistical models were found that describe the variation of the contact resistance with the selected input parameters. It was concluded that the diameter of the stainless steel warp and weft yarns has a statistically significant influence on the contact resistance regardless of the weave. Weft density had a significant influence on the contact resistance but only in case of the twill fabrics. Abrasion led to an increase in contact resistance regardless of the weave pattern and the type of stainless steel yarn that was used. Finally, a combination of parameters that leads to plain and twill fabrics with low contact resistance and robust contacts is recommended.

Calculation of Equivalent Resistance for Ground Wires Twined with Armor Rods in Contact Terminals

Directory of Open Access Journals (Sweden)

Gang Liu

2018-03-01

Full Text Available Ground wire breakage accidents can destroy the stable operation of overhead lines. The excessive temperature increase arising from the contact resistance between the ground wire and armor rod in the contact terminal is one of the main reasons causing the breakage of ground wires. Therefore, it is necessary to calculate the equivalent resistance for ground wires twined with armor rods in contact terminals. According to the actual distribution characteristics of the contact points in the contact terminal, a three-dimensional electromagnetic field simulation model of the contact terminal was established. Based on the model, the current distribution in the contact terminal was obtained. Subsequently, the equivalent resistance of a ground wire twined with the armor rod in the contact terminal was calculated. The effects of the factors influencing the equivalent resistance were also discussed. The corresponding verification experiments were conducted on a real ground wire on a contact terminal. The measurement results of the equivalent resistance for the armor rod segment showed good agreement with the electromagnetic modeling results.

Rugged Low-Resistance Contacts To High-Tc Superconductors

Science.gov (United States)

Caton, Randall; Selim, Raouf; Byvik, Charles E.; Buoncristiani, A. Martin

1992-01-01

Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.

Combined effects of fretting and pollutant particles on the contact resistance of the electrical connectors

Directory of Open Access Journals (Sweden)

Zhigang Kong

2017-06-01

Full Text Available Usually, when electrical connectors operate in vibration environments, fretting will be produced at the contact interfaces. In addition, serious environmental pollution particles will affect contact resistance of the connectors. The fretting will worsen the reliability of connectors with the pollutant particles. The combined effects of fretting and quartz particles on the contact resistance of the gold plating connectors are studied with a fretting test system. The results show that the frequencies have obvious effect on the contact resistance. The higher the frequency, the higher the contact resistance is. The quartz particles cause serious wear of gold plating, which make the nickel and copper layer exposed quickly to increase the contact resistance. Especially in high humidity environments, water supply certain adhesion function and make quartz particles easy to insert or cover the contact surfaces, and even cause opening resistance.

AC loss, interstrand resistance and mechanical properties of prototype EU DEMO TF conductors up to 30 000 load cycles

Science.gov (United States)

Yagotintsev, K.; Nijhuis, A.

2018-07-01

Two prototype Nb3Sn cable-in-conduit conductors conductors were designed and manufactured for the toroidal field (TF) magnet system of the envisaged European DEMO fusion reactor. The AC loss, contact resistance and mechanical properties of two sample conductors were tested in the Twente Cryogenic Cable Press under cyclic load up to 30 000 cycles. Though both conductors were designed to operate at 82 kA in a background magnetic field of 13.6 T, they reflect different approaches with respect to the magnet winding pack assembly. The first approach is based on react and wind technology while the second is the more common wind and react technology. Each conductor was tested first for AC loss in virgin condition without handling. The impact of Lorentz load during magnet operation was simulated using the cable press. In the press each conductor specimen was subjected to transverse cyclic load up to 30 000 cycles in liquid helium bath at 4.2 K. Here a summary of results for AC loss, contact resistance, conductor deformation, mechanical heat production and conductor stiffness evolution during cycling of the load is presented. Both conductors showed similar mechanical behaviour but quite different AC loss. In comparison with previously tested ITER TF conductors, both DEMO TF conductors possess very low contact resistance resulting in high coupling loss. At the same time, load cycling has limited impact on properties of DEMO TF conductors in comparison with ITER TF conductors.

Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

Science.gov (United States)

Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

2018-05-01

The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

Increased resistance of contact lens related bacterial biofilms to antimicrobial activity of soft contact lens care solutions

Science.gov (United States)

Szczotka-Flynn, Loretta B.; Imamura, Yoshifumi; Chandra, Jyotsna; Yu, Changping; Mukherjee, Pranab K.; Pearlman, Eric; Ghannoum, Mahmoud A.

2014-01-01

PURPOSE To determine if clinical and reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus form biofilms on silicone hydrogel contact lenses, and ascertain antimicrobial activities of contact lens care solutions. METHODS Clinical and American Type Culture Collection (ATCC) reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus were incubated with lotrafilcon A lenses under conditions that facilitate biofilm formation. Biofilms were quantified by quantitative culturing (colony forming units, CFUs), and gross morphology and architecture were evaluated using scanning electron microscopy (SEM) and confocal microscopy. Susceptibilities of the planktonic and biofilm growth phases of the bacteria to five common multipurpose contact lens care solutions and one hydrogen peroxide care solution were assessed. RESULTS P. aeruginosa, S. marcescens, and S. aureus reference and clinical strains formed biofilms on lotrafilcon A silicone hydrogel contact lenses, as dense networks of cells arranged in multiple layers with visible extracellular matrix. The biofilms were resistant to commonly used biguanide preserved multipurpose care solutions. P. aeruginosa and S. aureus biofilms were susceptible to a hydrogen peroxide and a polyquaternium preserved care solution, whereas S. marcescens biofilm was resistant to a polyquaternium preserved care solution but susceptible to hydrogen peroxide disinfection. In contrast, the planktonic forms were always susceptible. CONCLUSIONS P. aeruginosa, S. marcescens, and S. aureus form biofilms on lotrafilcon A contact lenses, which in contrast to planktonic cells, are resistant to the antimicrobial activity of several soft contact lens care products. PMID:19654521

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

2010-01-01

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.

2010-04-27

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

KAUST Repository

Black, J. P.

2013-10-22

In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.

Experimental determination of fuel-cladding thermal contact resistance

International Nuclear Information System (INIS)

Maglic, K.; Zivotic, Z.

1968-01-01

Thermal resistance of the UO 2 fuel - Zr-2 cladding was measure by the same experimental apparatus which was used for measuring the thermal conductivity of ceramic fuel. Thermal resistance was measure for a series of heat flux values and the dependence of thermal resistance on the flux is given within in the range from 0.66 W/cm 2 to 13.3 W/cm 2 . The temperature drop on the contact surface was between 39 deg C and 181.7 deg C, proportional to the increase of the heat flux [sr

Controllable Electrical Contact Resistance between Cu and Oriented-Bi2Te3 Film via Interface Tuning.

Science.gov (United States)

Kong, Xixia; Zhu, Wei; Cao, Lili; Peng, Yuncheng; Shen, Shengfei; Deng, Yuan

2017-08-02

The contact resistance between metals and semiconductors has become critical for the design of thin-film thermoelectric devices with their continuous miniaturization. Herein, we report a novel interface tuning method to regulate the contact resistance at the Bi 2 Te 3 -Cu interface, and three Bi 2 Te 3 films with different oriented microstructures are obtained. The lowest contact resistivity (∼10 -7 Ω cm 2 ) is observed between highly (00l) oriented Bi 2 Te 3 and Cu film, nearly an order of magnitude lower than other orientations. This significant decrease of contact resistivity is attributed to the denser film connections, lower lattice misfit, larger effective conducting contact area, and smaller width of the surface depletion region. Meanwhile, our results show that the reduction of contact resistance has little dependence on the interfacial diffusion based on the little change in contact resistivity after the introduction of an effective Ti barrier layer. Our work provides a new idea for the mitigation of contact resistivity in thin-film thermoelectric devices and also gives certain guidance for the size design of the next-level miniaturized devices.

Current voltage characteristics of composite superconductors with high contact resistance

International Nuclear Information System (INIS)

Akhmetov, A.A.; Baev, V.P.

1984-01-01

An experimental study has been made of current-voltage characteristics of composite superconductors with contact resistance between superconducting filaments and normal metal with high electrical conductivity. It is shown that stable resistive states exist in such conductors over a wide range of currents. The presence of resistive states is interpreted in terms of the resistive domain concept. The minimum and maximum currents of resistive states are found to be dependent on the electrical resistance of normal metal and magnetic field. (author)

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo

2016-12-28

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.

Investigation into Contact Resistance And Damage of Metal Contacts Used in RF-MEMS Switches

Science.gov (United States)

2009-09-01

mechanically cycled by a piezo - electric transducer (PZT). The resistance through the simulated switch was measured using a four-wire measurement technique...determined that the microwave performance of a closed relay can be modeled as a simple resistor to a first order equivalent [106,108]. The relay resistance is...Therefore, a piezo device capable of precise higher frequency motion was chosen to provide cyclic contact motion. This device needed to be physically small

CoSi{sub x} contact resistance after etching and ashing plasma exposure

Energy Technology Data Exchange (ETDEWEB)

Katahira, Ken; Fukasawa, Masanaga; Kobayashi, Shoji; Takizawa, Toshifumi; Isobe, Michio; Hamaguchi, Satoshi; Nagahata, Kazunori; Tatsumi, Tetsuya [Nagasaki Production Division 1, Sony Semiconductor Kyushu Corporation, 1883-43 Tsukuba-machi, Isahaya-shi, Nagasaki 854-0065 (Japan); Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014 (Japan); Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014 (Japan)

2009-07-15

The authors investigated the contact resistance fluctuation caused by CoSi{sub x} damage in plasma etching and ashing processes. They found that CoSi{sub x} layers damaged by plasma process exposure are readily oxidized when exposed to air resulting in increased resistance. They also found that the contact resistance increases more when CH{sub 3}F is used instead of CF{sub 4} during etching process. The lower the mass number of dominant ions becomes, the deeper the ions penetrate. Molecular dynamics simulation revealed that dissociated species from lighter ions penetrate deeper and that this stimulates deeper oxidation. They also found that contact resistance further increased by using postetch ashing plasma even in an H{sub 2}/N{sub 2} ashing process in which O{sub 2} was not used. Here, too, the reason for this is that the ion penetration causes deep oxidation. They observed that the contact resistance has a linear relationship with the oxide concentration in CoSi{sub x}. This leads to the conclusion that it is essential to precisely control the ion energy as well as to properly select the ion species in the plasma process in the fabrication of next-generation semiconductor devices.

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Zhu, Yihan; Alshareef, Husam N.; Kim, Moon J.; Gnade, Bruce E.

2016-01-01

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post

FancJ regulates interstrand crosslinker induced centrosome amplification through the activation of polo-like kinase 1

Directory of Open Access Journals (Sweden)

Jianqiu Zou

2013-08-01

DNA damage response (DDR and the centrosome cycle are two of the most critical processes for maintaining a stable genome in animals. Sporadic evidence suggests a connection between these two processes. Here, we report our findings that six Fanconi Anemia (FA proteins, including FancI and FancJ, localize to the centrosome. Intriguingly, we found that the localization of FancJ to the mother centrosome is stimulated by a DNA interstrand crosslinker, Mitomycin C (MMC. We further show that, in addition to its role in interstrand crosslinking (ICL repair, FancJ also regulates the normal centrosome cycle as well as ICL induced centrosome amplification by activating the polo-like kinase 1 (PLK1. We have uncovered a novel function of FancJ in centrosome biogenesis and established centrosome amplification as an integral part of the ICL response.

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

KAUST Repository

Allen, Thomas G.; Bullock, James; Jeangros, Quentin; Samundsett, Christian; Wan, Yimao; Cui, Jie; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Javey, Ali; Cuevas, Andres

2017-01-01

Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

KAUST Repository

Allen, Thomas G.

2017-02-04

Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

Simplistic graphene transfer process and its impact on contact resistance

KAUST Repository

Ghoneim, Mohamed T.; Smith, Casey; Hussain, Muhammad Mustafa

2013-01-01

Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene's most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.

Simplistic graphene transfer process and its impact on contact resistance

KAUST Repository

Ghoneim, Mohamed T.

2013-05-09

Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene\\'s most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.

Knockdown of αII spectrin in normal human cells by siRNA leads to chromosomal instability and decreased DNA interstrand cross-link repair

International Nuclear Information System (INIS)

McMahon, Laura W.; Zhang Pan; Sridharan, Deepa M.; Lefferts, Joel A.; Lambert, Muriel W.

2009-01-01

Nonerythroid α-spectrin (αIISp) is a structural protein involved in repair of DNA interstrand cross-links and is deficient in cells from patients with Fanconi anemia (FA), which are defective in ability to repair cross-links. In order to further demonstrate the importance of the role that αIISp plays in normal human cells and in the repair defect in FA, αIISp was knocked down in normal cells using siRNA. Depletion of αIISp in normal cells by siRNA resulted in chromosomal instability and cellular hypersensitivity to DNA interstrand cross-linking agents. An increased number of chromosomal aberrations were observed and, following treatment with a DNA interstrand cross-linking agent, mitomycin C, cells showed decreased cell growth and survival and decreased formation of damage-induced αIISp and XPF nuclear foci. Thus depletion of αIISp in normal cells leads to a number of defects observed in FA cells, such as chromosome instability and a deficiency in cross-link repair.

Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

International Nuclear Information System (INIS)

Yagi, Iwao; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu

2004-01-01

We established a dry-etching patterning process for the channel formation of pentacene thin-film transistor, and fabricated a four-terminal device equipped with a gate electrode. The four-terminal device enabled us to divide two-terminal source-drain resistance into two components of contact resistance and pentacene channel resistance. We obtained direct evidence of a gate-voltagedependent contact resistance change: the gate-induced charge significantly reduced the contact resistance and increased source-drain current. Furthermore, the temperature dependence of the device clearly indicated that the contact resistance was much higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K. An observed activation energy of 80 meV for contact resistance was higher than that of 42 meV for pentacene channel resistance

Thermal contact resistance of a particle on a substrate

International Nuclear Information System (INIS)

Tan, J.; Safa, H.; Bonin, B.

1996-01-01

It has been formerly established that field emission in RF cavities is mainly due to contamination by small micron size particles lying on the surface. When applying the RF field, these particles can melt and stick to the surface making it harder to get rid of them. In order to understand the thermal process involved, a crucial physical quantity is needed: the thermal contact resistance between the particle and the substrate. An experimental method is described to measure this quantity, with the use of a scanning electron microscope. By defocusing the beam of the SEM, one can get enough power deposited in one particle to melt it. The power level at which the particle melts gives the thermal contact resistance. Therefore, using the measured value, thermal calculations yield some hints for understanding the violent thermal processes observed in RF fields. (author)

Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

Science.gov (United States)

Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

2016-05-01

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

Effects of contact resistance on electrical conductivity measurements of SiC-based materials

Energy Technology Data Exchange (ETDEWEB)

Youngblood, G.E.; Thomsen, E.C.; Henager, C.H., E-mail: chuck.henager@pnnl.gov

2013-11-15

A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (R{sub c}) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ∼973 K. The R{sub c}-values behaved similarly for each type of metallic electrode: R{sub c} > ∼1000 Ω cm{sup 2} at RT, decreasing continuously to ∼1–10 Ω cm{sup 2} at 973 K. The temperature dependence of the inverse R{sub c} indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ∼0.3 eV. For the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

A micro-scale model for predicting contact resistance between bipolar plate and gas diffusion layer in PEM fuel cells

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.; Lin, G.; Shih, A.J.; Hu, S.J. [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2007-01-01

Contact resistance between the bipolar plate (BPP) and the gas diffusion layer (GDL) in a proton exchange membrane (PEM) fuel cell constitutes a significant portion of the overall fuel cell electrical resistance under the normal operation conditions. Most current methods for contact resistance estimation are experimental and there is a lack of well developed theoretical methods. A micro-scale numerical model is developed to predict the electrical contact resistance between BPP and GDL by simulating the BPP surface topology and GDL structure and numerically determining the status for each contact spot. The total resistance and pressure are obtained by considering all contact spots as resistances in parallel and summing the results together. This model shows good agreements with experimental results. Influences of BPP surface roughness parameters on contact resistance are also studied. This model is beneficial in understanding the contact behavior between BPP and GDL and can be integrated with other fuel cell simulations to predict the overall performance of PEM fuel cells. (author)

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

KAUST Repository

Black, J. P.; Breward, C. J. W.; Howell, P. D.; Young, R. J. S.

2013-01-01

across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a

Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

KAUST Repository

Park, Woojin

2018-05-15

We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.

Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

Science.gov (United States)

Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

2002-07-01

We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

Photothermal radiometry applied to characterization and control of thermal contact resistance of crimped metals; Radiometrie photothermique appliquee a la caracterisation et au controle de la resistance thermique de contact de metaux sertis

Energy Technology Data Exchange (ETDEWEB)

Van Schel, Etienne

1989-11-15

Modulated photothermal radiometry is used to study the thermal contact between two metals. At first, two models using a bidimensional axisymmetric geometry are proposed to describe the interface: the first one deals with thermal contact resistance, the second one with an equivalent layer. A thorough calculation of the photothermal signal taking into account the nature of the sample and the detection is here presented. Theoretical simulations show the influence of several parameters (frequency. dimensions of the excitation and the detection) on the sensitivity of the method applied to the detection of the thermal resistance. The comparison, with a three layer-model justifies the use of thermal resistance in periodical regime, for air layers between metals. Then, we present an experimental device that is used to validate the model. The results, obtained on duralumin-copper samples, show the sensitivity of the method and lead us to propose values of thermal contact resistance for different crimpings. At last an industrial testing equipment is described. The results, obtained on laboratory samples, are confirmed. Heat exchanger pipes, including voluntary defects are tested. Thanks to this device, we are able to make an in situ crimping control that can also be applied to other types of contacts. [French] La radiometrie photothermique est utilisee pour etudier le contact thermique entre deux metaux. Tout d'abord, deux modeles utilisant une geometrie bidimensionnelle axisymetrique sont proposes pour decrire l'interface: le premier utilise une resistance thermique de contact, le second un milieu equivalent Un calcul complet du signal photothermique, prenant en compte la nature de l'echantillon et de la detection, est presente. Des simulations theoriques montrent l'influence de quelques parametres (frequence, dimensions de l'excitation et de la detection) sur la sensibilite de la methode a la detection de la resistance thermique. La comparaison, avec un modele a trois

Contact Modelling in Resistance Welding, Part II: Experimental Validation

DEFF Research Database (Denmark)

Song, Quanfeng; Zhang, Wenqi; Bay, Niels

2006-01-01

Contact algorithms in resistance welding presented in the previous paper are experimentally validated in the present paper. In order to verify the mechanical contact algorithm, two types of experiments, i.e. sandwich upsetting of circular, cylindrical specimens and compression tests of discs...... with a solid ring projection towards a flat ring, are carried out at room temperature. The complete algorithm, involving not only the mechanical model but also the thermal and electrical models, is validated by projection welding experiments. The experimental results are in satisfactory agreement...

Thermal contact resistance of a particle on a substrate

International Nuclear Information System (INIS)

Tan, J.; Safa, H.; Bonin, B.

1996-01-01

It has been formerly established that field emission in RF cavities is mainly die to contamination by small micron size particles lying on the surface. When applying the RF field, these particles can melt and stick to the surface making it harder to get rid of them. In order to understand the thermal process involved, a crucial physical quantity is needed: the thermal contact resistance between the particle and the substrate. In the present paper, an experimental method is described to measure this quantity, with the use of a scanning electron microscope. By defocusing the beam of the SEM, one can get enough power deposited in one particle to melt it. The power level at which the particle melts gives the thermal contact resistance. Therefore, using the measured value, thermal calculations yield some hints for understanding the violent thermal processes observed in RF fields. (author)

A Feasibility Study on the Worn Area Estimation by Measuring a Contact Resistance (I)

International Nuclear Information System (INIS)

Lee, Young-Ho; Kim, Hyung-Kyu

2007-01-01

In order to improve the fretting wear resistance of the nuclear fuel rod with considering the effect of the contacting spring shape, it is necessary to examine the formation procedure of the worn area during the fretting wear experiments with including its shape, size and the debris removal path. This is because the wear volume and the maximum wear depth are dominantly affected by the worn area and the wear resistance of the nuclear fuel rod was dominantly affected by the spring shape rather than the test environment and the contact mode (i.e. impact, sliding, rubbing, etc.). Unfortunately, it is almost impossible to archive the size and shape of the worn area on real-time basis because the contact surfaces are always hidden. If we could measure the worn area properties during fretting wear tests, it enables us to promptly estimate the wear resistance or behavior with various contacting spring shapes. Generally, fretting wear degradation is generated by the localized plastic deformation, fracture and finally detachment of wear debris. Generally, wear debris easily oxidized by frictional heat, test environment, etc. From the previous studies, most of the wear debris was detached from the worn surface in the distilled water condition while the wear debris in the dry condition remained on or adhered to the worn surface. At this time, it is reasonable that the accumulated wear debris on the worn surface is existed in the form of oxide. If small amount of electric current was applied between the contacting surfaces, wear debris could be an obstacle to flow the electric current. This means that the variation of the contact resistance under constant electric current during the fretting wear tests has much information on the formation of the worn area even though the applying current could accelerate the oxidation of the generated wear debris. So, in this study, fretting wear tests have been performed with applying an electric current in room temperature air in order to

Transmission of methicillin-resistant Staphylococcus aureus to household contacts

NARCIS (Netherlands)

F.P.N. Mollema (Femke); J.H. Richardus (Jan Hendrik); M.D. Behrendt (Myra); N. Vaessen (Norbert); W. Lodder; W. Hendriks; H.A. Verbrugh (Henri); A. Voss (Andreas)

2010-01-01

textabstractThe frequency of and risk factors for methicillin-resistant Staphylococcus aureus (MRSA) transmission from a MRSA index person to household contacts were assessed in this prospective study. Between January 2005 and December 2007, 62 newly diagnosed MRSA index persons (46 patients and 16

Effect of air confinement on thermal contact resistance in nanoscale heat transfer

Science.gov (United States)

Pratap, Dheeraj; Islam, Rakibul; Al-Alam, Patricia; Randrianalisoa, Jaona; Trannoy, Nathalie

2018-03-01

Here, we report a detailed analysis of thermal contact resistance (R c) of nano-size contact formed between a Wollaston wire thermal probe and the used samples (fused silica and titanium) as a function of air pressure (from 1 Pa to 105 Pa). Moreover, we suggest an analytical model using experimental data to extract R c. We found that for both samples, the thermal contact resistance decreases with increasing air pressure. We also showed that R c strongly depends on the thermal conductivity of materials keeping other parameters the same, such as roughness of the probe and samples, as well as the contact force. We provide a physical explanation of the R c trend with pressure and thermal conductivity of the materials: R c is ascribed to the heat transfer through solid-solid (probe-sample) contact and confined air at nanoscale cavities, due to the rough nature of the materials in contact. The contribution of confined air on heat transfer through the probe sample contact is significant at atmospheric pressure but decreases as the pressure decreases. In vacuum, only the solid-solid contact contributes to R c. In addition, theoretical calculations using the well-known acoustic and diffuse mismatch models showed a high thermal conductivity material that exhibits high heat transmission and consequently low R c, supporting our findings.

Evaluation of Blast Resistance of Fiber Reinforced Composite Specimens under Contact Blast Load

Science.gov (United States)

Janota, O.; Foglar, M.

2017-09-01

This paper presents results of experimental programme which took place in 2014, 2015 and 2016. Experiments were focused on the resistance of full scale concrete panels subjected to contact blast loading. Specimens were loaded by contact blast by plastic explosive. All specimens were reinforced concrete slabs made of fiber concrete. Basalt mesh and textile sheets were added to some of the experiments for creating more heterogeneous material to achieve better resistance of the specimens. Evaluation of experiments was mainly focused on the damaged area on the contact side and soffit of the specimens. Dependency of the final damage of concrete panels on the weight of explosive and concrete strength was assessed.

Non-erythroid alpha spectrin prevents telomere dysfunction after DNA interstrand cross-link damage

OpenAIRE

Zhang, Pan; Herbig, Utz; Coffman, Frederick; Lambert, Muriel W.

2013-01-01

Telomere integrity is critical for telomere function and genomic stability. We previously demonstrated that non-erythroid ?-spectrin (?IISp) is present in mammalian cell nuclei where it is important in repair of DNA interstrand cross-links (ICLs) and chromosome stability. We now demonstrate that ?IISp is also important for telomere maintenance after ICL damage. It localizes to telomeres in S phase after ICL damage where it has enhanced association with TRF1 and TRF2 and is required for recrui...

A mechanical-electrical finite element method model for predicting contact resistance between bipolar plate and gas diffusion layer in PEM fuel cells

Energy Technology Data Exchange (ETDEWEB)

Lai, Xinmin; Liu, Dong' an; Peng, Linfa [State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China); Ni, Jun [Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2008-07-15

Contact resistance between the bipolar plate (BPP) and the gas diffusion layer (GDL) plays a significant role on the power loss in a proton exchange membrane (PEM) fuel cell. There are two types of contact behavior at the interface of the BPP and GDL, which are the mechanical one and the electrical one. Furthermore, the electrical contact behavior is dependent on the mechanical one. Thus, prediction of the contact resistance is a coupled mechanical-electrical problem. The current FEM models for contact resistance estimation can only simulate the mechanical contact behavior and moreover they are based on the assumption that the contact surface is equipotential, which is not the case in a real BPP/GDL assembly due to the round corner and margin of the BPP. In this study, a mechanical-electrical FEM model was developed to predict the contact resistance between the BPP and GDL based on the experimental interfacial contact resistivity. At first, the interfacial contact resistivity was obtained by experimentally measuring the contact resistance between the GDL and a flat graphite plate of the same material and processing conditions as the BPP. Then, with the interfacial contact resistivity, the mechanical and electrical contact behaviors were defined and the potential distribution of the BPP/GDL assembly was analyzed using the mechanical-electrical FEM model. At last, the contact resistance was calculated according to the potential drop and the current of the contact surface. The numerical results were validated by comparing with those of the model reported previously. The influence of the round corner of the BPP on the contact resistance was also studied and it is found that there exists an optimal round corner that can minimize the contact resistance. This model is beneficial in understanding the mechanical and electrical contact behaviors between the BPP and GDL, and can be used to predict the contact resistance in a new BPP/GDL assembly. (author)

Resistance of Pseudomonas aeruginosa isolates to hydrogel contact lens disinfection correlates with cytotoxic activity.

Science.gov (United States)

Lakkis, C; Fleiszig, S M

2001-04-01

One of the most common pathogens in infection of hydrogel contact lens wearers is Pseudomonas aeruginosa, which can gain access to the eye via contamination of the lens, lens case, and lens care solutions. Only one strain per species is used in current regulatory testing for the marketing of chemical contact lens disinfectants. The aim of this study was to determine whether P. aeruginosa strains vary in their susceptibility to hydrogel contact lens disinfectants. A method for rapidly screening bacterial susceptibility to contact lens disinfectants was developed, based on measurement of the MIC. The susceptibility of 35 P. aeruginosa isolates to two chemical disinfectants was found to vary among strains. MICs ranged from 6.25 to 100% for both disinfectants at 37 degrees C, and a number of strains were not inhibited by a 100% disinfectant concentration in the lens case environment at room temperature (22 degrees C). Resistance to disinfection appeared to be an inherent rather than acquired trait, since some resistant strains had been isolated prior to the introduction of the disinfectants and some susceptible P. aeruginosa strains could not be made more resistant by repeated disinfectant exposure. A number of P. aeruginosa strains which were comparatively more resistant to short-term disinfectant exposure also demonstrated the ability to grow to levels above the initial inoculum in one chemical disinfectant after long-term (24 to 48 h) disinfectant exposure. Resistance was correlated with acute cytotoxic activity toward corneal epithelial cells and with exsA, which encodes a protein that regulates cytotoxicity via a complex type III secretion system. These results suggest that chemical disinfection solutions may select for contamination with cytotoxic strains. Further investigation of the mechanisms and factors responsible for resistance may also lead to strategies for reducing adverse responses to contact lens wear.

Determination of a Wear Initiation Cycle by using a Contact Resistance Measurement in Nuclear Fuel Fretting

International Nuclear Information System (INIS)

Lee, Young Ho; Kim, Hyung Kyu

2008-01-01

In nuclear fuel fretting, the improving of the contact condition with a modified spring shape is a useful method for increasing the wear resistance of the nuclear fuel rod. This is because the fretting wear resistance between the fuel rod and grid spring is mainly affected by the grid spring shape rather than the environment, the contact modes, etc. In addition, the wear resistance is affected by the wear debris behavior between contact surfaces. So, it is expected that the wear initiation of each spring shape should be determined in order to evaluate a wear resistance. However, it is almost impossible to measure the wear behavior in contact surfaces on a real time basis because the contact surfaces are always hidden. Besides, the results of the worn surface observation after the fretting wear tests are restricted to archive the information on the wear debris behavior and the formation mechanism of the wear scar. In order to evaluate the wear behavior during the fretting wear tests, it is proposed that the contact resistance measurement is a useful method for examining the wear initiation cycle and modes. Generally, fretting wear damages are rapidly progressed by a localized plastic deformation between the contact surfaces, crack initiation and fracture of the deformed surface with a strain hardening difference between a surface and a subsurface and finally a detachment of wear debris. After this, wear debris is easily oxidized by frictional heat, test environment, etc. At this time, a small amount of electric current applied between the contact surfaces will be influenced by the wear debris, which could be an obstacle to an electric current flow. So, it is possible to archive the information on the wear behavior by measuring the contact resistance. In order to determine the wear initiation cycle during the fretting wear tests, in this study, fretting wear tests have been performed by applying a constant electric current in room temperature air

Contact printed masks for 3D microfabrication in negative resists

DEFF Research Database (Denmark)

Häfliger, Daniel; Boisen, Anja

2005-01-01

We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded into the ......We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded...... into the negative resist to protect buried material from UV-exposure. Unlike direct evaporation-deposition of a mask onto the SU-8, printing avoids high stress and radiation, thus preventing resist wrinkling and prepolymerization. We demonstrate effective monolithic fabrication of soft, 4-μm thick and 100-μm long...

Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2009-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was

Hypersensitivity to contact inhibition provides a clue to cancer resistance of naked mole-rat.

Science.gov (United States)

Seluanov, Andrei; Hine, Christopher; Azpurua, Jorge; Feigenson, Marina; Bozzella, Michael; Mao, Zhiyong; Catania, Kenneth C; Gorbunova, Vera

2009-11-17

The naked mole-rat is the longest living rodent with a maximum lifespan exceeding 28 years. In addition to its longevity, naked mole-rats have an extraordinary resistance to cancer as tumors have never been observed in these rodents. Furthermore, we show that a combination of activated Ras and SV40 LT fails to induce robust anchorage-independent growth in naked mole-rat cells, while it readily transforms mouse fibroblasts. The mechanisms responsible for the cancer resistance of naked mole-rats were unknown. Here we show that naked mole-rat fibroblasts display hypersensitivity to contact inhibition, a phenomenon we termed "early contact inhibition." Contact inhibition is a key anticancer mechanism that arrests cell division when cells reach a high density. In cell culture, naked mole-rat fibroblasts arrest at a much lower density than those from a mouse. We demonstrate that early contact inhibition requires the activity of p53 and pRb tumor suppressor pathways. Inactivation of both p53 and pRb attenuates early contact inhibition. Contact inhibition in human and mouse is triggered by the induction of p27(Kip1). In contrast, early contact inhibition in naked mole-rat is associated with the induction of p16(Ink4a). Furthermore, we show that the roles of p16(Ink4a) and p27(Kip1) in the control of contact inhibition became temporally separated in this species: the early contact inhibition is controlled by p16(Ink4a), and regular contact inhibition is controlled by p27(Kip1). We propose that the additional layer of protection conferred by two-tiered contact inhibition contributes to the remarkable tumor resistance of the naked mole-rat.

Thermal resistance of indium coated sapphire–copper contacts below 0.1K

CERN Document Server

Eisel, T; Koettig, T

2014-01-01

High thermal resistances exist at ultra-low temperatures for solid-solid interfaces. This is especially true for pressed metal-sapphire joints, where the heat is transferred by phonons only. For such pressed joints it is difficult to achieve good physical, i.e. thermal contacts due to surface irregularities in the microscopic or larger scale. Applying ductile indium as an intermediate layer reduces the thermal resistance of such contacts. This could be proven by measurements of several researchers. However, the majority of the measurements were performed at temperatures higher than 1 K. Consequently, it is difficult to predict the thermal resistance of pressed metal-sapphire joints at temperatures below 1 K. In this paper the thermal resistances across four different copper-sapphire-copper sandwiches are presented in a temperature range between 30 mK and 100 mK. The investigated sandwiches feature either rough or polished sapphire discs (empty set 20 mm x 1.5 mm) to investigate the phonon scattering at the bo...

Evidence for different mechanisms of ‘unhooking’ for melphalan and cisplatin-induced DNA interstrand cross-links in vitro and in clinical acquired resistant tumour samples

International Nuclear Information System (INIS)

Spanswick, Victoria J; Hartley, John A; Lowe, Helen L; Newton, Claire; Bingham, John P; Bagnobianchi, Alessia; Kiakos, Konstantinos; Craddock, Charles; Ledermann, Jonathan A; Hochhauser, Daniel

2012-01-01

DNA interstrand cross-links (ICLs) are critical lesions produced by several cancer chemotherapy agents including platinum drugs and nitrogen mustards. We have previously shown in haematological (multiple myeloma) and solid tumours (ovarian cancer) that clinical sensitivity to such agents can result from a defect in DNA ICL processing leading to their persistence. Conversely, enhanced repair can result in clinical acquired resistance following chemotherapy. The repair of ICLs is complex but it is assumed that the ‘unhooking’ step is common to all ICLs. Using a modification of the single cell gel electrophoresis (Comet) assay we measured the formation and unhooking of melphalan and cisplatin-induced ICLs in cell lines and clinical samples. DNA damage response in the form of γ-H2AX foci formation and the formation of RAD51 foci as a marker of homologous recombination were also determined. Real-time PCR of 84 genes involved in DNA damage signalling pathways was also examined pre- and post-treatment. Plasma cells from multiple myeloma patients known to be clinically resistant to melphalan showed significant unhooking of melphalan-induced ICLs at 48 hours, but did not unhook cisplatin-induced ICLs. In ovarian cancer cells obtained from patients following platinum-based chemotherapy, unhooking of cisplatin-induced ICLs was observed at 48 hours, but no unhooking of melphalan-induced ICLs. In vitro, A549 cells were proficient at unhooking both melphalan and cisplatin-induced ICLs. γ-H2AX foci formation closely followed the formation of ICLs for both drugs, and rapidly declined following the peak of formation. RPMI8226 cells unhooked melphalan, but not cisplatin-induced ICLs. In these cells, although cross-links form with cisplatin, the γ-H2AX response is weak. In A549 cells, addition of 3nM gemcitabine resulted in complete inhibition of cisplatin-induced ICL unhooking but no effect on repair of melphalan ICLs. The RAD51 foci response was both drug and cell line

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

2018-01-01

that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

Two-point concrete resistivity measurements: interfacial phenomena at the electrode–concrete contact zone

International Nuclear Information System (INIS)

McCarter, W J; Taha, H M; Suryanto, B; Starrs, G

2015-01-01

Ac impedance spectroscopy measurements are used to critically examine the end-to-end (two-point) testing technique employed in evaluating the bulk electrical resistivity of concrete. In particular, this paper focusses on the interfacial contact region between the electrode and specimen and the influence of contacting medium and measurement frequency on the impedance response. Two-point and four-point electrode configurations were compared and modelling of the impedance response was undertaken to identify and quantify the contribution of the electrode–specimen contact region on the measured impedance. Measurements are presented in both Bode and Nyquist formats to aid interpretation. Concretes mixes conforming to BSEN206-1 and BS8500-1 were investigated which included concretes containing the supplementary cementitious materials fly ash and ground granulated blast-furnace slag. A measurement protocol is presented for the end-to-end technique in terms of test frequency and electrode–specimen contacting medium in order to minimize electrode–specimen interfacial effect and ensure correct measurement of bulk resistivity. (paper)

Ultraviolet irradiation produces cytotoxic synergy and increased DNA interstrand crosslinking with cis- and trans-diamminedichloroplatinum(II)

International Nuclear Information System (INIS)

Swinnen, L.J.; Erickson, L.C.

1989-01-01

The excision-repair mechanism responsible for the removal of UV-induced thymine dimers may also play a role in the repair of cis-diamminedichloroplatinum(II) (cis-DDP)-induced DNA adducts in both bacteria and mammalian cells. It was hypothesized that UV dimers and cis-DDP adducts, when present simultaneously, might compete for a common repair system. Colony survival assays were performed in HT-29 human colon carcinoma cells exposed either to cis-DDP alone or to cis-DDP immediately followed by UV exposure. Progressively greater cytotoxic synergy with both increasing UV dose and cis-DDP dose was observed, to a point of saturation beyond which further toxicity was purely additive. An approximate doubling in DNA crosslink frequency, relative to cis-DDP alone, was found in cells exposed to cis-DDP plus UV. Since cis-DDP produces both inter- and intrastrand DNA crosslinks similar studies were performed with trans-DDP, which is incapable of producing intrastrand crosslinks, but does produce interstrand crosslinks. Cytotoxic synergy and increased interstrand crosslinking again resulted from the addition of UV exposure, but not to the same extent as seen with cis-DDP. (author)

Nuclear alpha spectrin: Critical roles in DNA interstrand cross-link repair and genomic stability

OpenAIRE

Lambert, Muriel W

2016-01-01

Non-erythroid alpha spectrin (?IISp) is a structural protein which we have shown is present in the nucleus of human cells. It interacts with a number of nuclear proteins such as actin, lamin, emerin, chromatin remodeling factors, and DNA repair proteins. ?IISp?s interaction with DNA repair proteins has been extensively studied. We have demonstrated that nuclear ?IISp is critical in DNA interstrand cross-link (ICL) repair in S phase, in both genomic (non-telomeric) and telomeric DNA, and in ma...

Finite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensor

KAUST Repository

Sun, Jian

2011-08-06

In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89 × 104% and 0.02%/(10-4 T), respectively, at 1 Tesla. For values of contact resistivity up to 10-8cm2 the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5 × 10-6 cm2 of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. © Springer Science+Business Media, LLC 2011.

Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

Science.gov (United States)

Han, Zhiheng; Xu, Guangwei; Wang, Wei; Lu, Congyan; Lu, Nianduan; Ji, Zhuoyu; Li, Ling; Liu, Ming

2016-07-01

Contact resistance plays an important role in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this paper, the surface potential distributions along the channel have been measured by using Kelvin probe force microscopy (KPFM) on operating a-IGZO TFTs, and sharp potential drops at the edges of source and drain were observed. The source and drain contact resistances can be extracted by dividing sharp potential drops with the corresponding drain to source current. It is found that the contact resistances could not be neglected compared with the whole channel resistances in the a-IGZO TFT, and the contact resistances decrease remarkably with increasing gate biased voltage. Our results suggest that the contact resistances can be controlled by tuning the gate biased voltage. Moreover, a transition from gradual channel approximation to space charge region was observed through the surface potential map directly when TFT operating from linear regime to saturation regime.

Low resistance and transparent Ag/AZO ohmic contact to p-GaN

International Nuclear Information System (INIS)

Han, T.; Wang, T.; Gan, X. W.; Wu, H.; Shi, Y.; Liu, C.

2014-01-01

Silver (Ag)/ aluminum-doped zinc oxide (AZO) films were deposited on p-GaN by using electron beam evaporation. After the annealing process, current -voltage (I-V) measurements were carried out to determine the characteristic of the contacts. The Ag/AZO films annealed at 600 .deg. C were found to present an ohmic contact behavior. The specific contact resistance was calculated to be 9.76 x 10 -4 Ωcm 2 and the transmittance was over 80% for visibly light. The atomic force microscope was used to measure the aggregation of Ag grains which may have been the main factor in the formation of the Ag/AZO ohmic contact to p-GaN.

Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

KAUST Repository

Wondmagegn, Wudyalew T.

2010-09-24

The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.

Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

KAUST Repository

Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Pieper, Ron J.; Quevedo-Ló pez, Manuel Angel Quevedo; Gowrisanker, Srinivas; Alshareef, Husam N.; Stiegler, Harvey J.; Gnade, Bruce E.

2010-01-01

The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.

An analytical model and parametric study of electrical contact resistance in proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhiliang; Wang, Shuxin; Zhang, Lianhong [School of Mechanical Engineering, Tianjin University, Tianjin 300072 (China); Hu, S. Jack [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2009-04-15

This paper presents an analytical model of the electrical contact resistance between the carbon paper gas diffusion layers (GDLs) and the graphite bipolar plates (BPPs) in a proton exchange membrane (PEM) fuel cell. The model is developed based on the classical statistical contact theory for a PEM fuel cell, using the same probability distributions of the GDL structure and BPP surface profile as previously described in Wu et al. [Z. Wu, Y. Zhou, G. Lin, S. Wang, S.J. Hu, J. Power Sources 182 (2008) 265-269] and Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Results show that estimates of the contact resistance compare favorably with experimental data by Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Factors affecting the contact behavior are systematically studied using the analytical model, including the material properties of the two contact bodies and factors arising from the manufacturing processes. The transverse Young's modulus of chopped carbon fibers in the GDL and the surface profile of the BPP are found to be significant to the contact resistance. The factor study also sheds light on the manufacturing requirements of carbon fiber GDLs for a better contact performance in PEM fuel cells. (author)

Development and applications of the contact electric resistance technique

Energy Technology Data Exchange (ETDEWEB)

Saario, T.

1995-12-31

At the moment both the scientific understanding of corrosion processes and the engineering practices of corrosion control in power plants can benefit considerably from the development of in situ on-line instruments for characterisation of the surface films on construction materials. In this work a new in situ Contact Electric Resistance (CER) technique has been developed for measurement of electric resistance of surface films on metals. The CER technique was applied in this work in several different research areas. These include e.g. localized corrosion of stainless steel in paper mill wet end environment, investigation of the effect of inhibitors in steam generator crevice environments, passivation of GaAs single crystals by sulphate treatment and monitoring of the kinetics of oxide growth on zirconium metals in high temperature water. The CER technique has a measurement capacity ranging from 10-9 {omega} to 105 {omega}. The lowest range of resistance is typical for metallic layers deposited on the surface in electrodeposition processes. The highest range of resistance is found for insulator type of films e.g. on zirconium metals. (author)

Evidence for different mechanisms of ‘unhooking’ for melphalan and cisplatin-induced DNA interstrand cross-links in vitro and in clinical acquired resistant tumour samples

Directory of Open Access Journals (Sweden)

Spanswick Victoria J

2012-09-01

Full Text Available Abstract Background DNA interstrand cross-links (ICLs are critical lesions produced by several cancer chemotherapy agents including platinum drugs and nitrogen mustards. We have previously shown in haematological (multiple myeloma and solid tumours (ovarian cancer that clinical sensitivity to such agents can result from a defect in DNA ICL processing leading to their persistence. Conversely, enhanced repair can result in clinical acquired resistance following chemotherapy. The repair of ICLs is complex but it is assumed that the ‘unhooking’ step is common to all ICLs. Methods Using a modification of the single cell gel electrophoresis (Comet assay we measured the formation and unhooking of melphalan and cisplatin-induced ICLs in cell lines and clinical samples. DNA damage response in the form of γ-H2AX foci formation and the formation of RAD51 foci as a marker of homologous recombination were also determined. Real-time PCR of 84 genes involved in DNA damage signalling pathways was also examined pre- and post-treatment. Results Plasma cells from multiple myeloma patients known to be clinically resistant to melphalan showed significant unhooking of melphalan-induced ICLs at 48 hours, but did not unhook cisplatin-induced ICLs. In ovarian cancer cells obtained from patients following platinum-based chemotherapy, unhooking of cisplatin-induced ICLs was observed at 48 hours, but no unhooking of melphalan-induced ICLs. In vitro, A549 cells were proficient at unhooking both melphalan and cisplatin-induced ICLs. γ-H2AX foci formation closely followed the formation of ICLs for both drugs, and rapidly declined following the peak of formation. RPMI8226 cells unhooked melphalan, but not cisplatin-induced ICLs. In these cells, although cross-links form with cisplatin, the γ-H2AX response is weak. In A549 cells, addition of 3nM gemcitabine resulted in complete inhibition of cisplatin-induced ICL unhooking but no effect on repair of melphalan ICLs. The

An improved model for predicting electrical contact resistance between bipolar plate and gas diffusion layer in proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhiliang; Wang, Shuxin [School of Mechanical Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yuanyuan; Lin, Guosong; Hu, S. Jack [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2008-07-15

Electrical contact resistance between bipolar plates (BPPs) and gas diffusion layers (GDLs) in PEM fuel cells has attracted much attention since it is one significant part of the total contact resistance which plays an important role in fuel cell performance. This paper extends a previous model by Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783] on the prediction of electrical contact resistance within PEM fuel cells. The original microscale numerical model was based on the Hertz solution for individual elastic contacts, assuming that contact bodies, GDL carbon fibers and BPP asperities are isotropic elastic half-spaces. The new model features a more practical contact by taking into account the bending behavior of carbon fibers as well as their anisotropic properties. The microscale single contact process is solved numerically using the finite element method (FEM). The relationship between the contact pressure and the electrical resistance at the GDL/BPP interface is derived by multiple regression models. Comparisons of the original model by Zhou et al. and the new model with experimental data show that the original model slightly overestimates the electrical contact resistance, whereas a better agreement with experimental data is observed using the new model. (author)

The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

Science.gov (United States)

Fatemi, Navid S.; Weizer, Victor G.

1993-01-01

We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

Science.gov (United States)

Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

2017-06-07

We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

Science.gov (United States)

Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

2018-04-01

Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

Contact resistance problems applying ERT on low bulk density forested stony soils. Is there a solution?

Science.gov (United States)

Deraedt, Deborah; Touzé, Camille; Robert, Tanguy; Colinet, Gilles; Degré, Aurore; Garré, Sarah

2015-04-01

Electrical resistivity tomography (ERT) has often been put forward as a promising tool to quantify soil water and solute fluxes in a non-invasive way. In our experiment, we wanted to determine preferential flow processes along a forested hillslope using a saline tracer with ERT. The experiment was conducted in the Houille watershed, subcatchment of the Meuse located in the North of Belgian Ardennes (50° 1'52.6'N, 4° 53'22.5'E). The climate is continental but the soil under spruce (Picea abies (L.) Karst.) and Douglas fire stand (Pseudotsuga menziesii (Mirb.) Franco) remains quite dry (19% WVC in average) during the whole year. The soil is Cambisol and the parent rock is Devonian schist covered with variable thickness of silty loam soil. The soil density ranges from 1.13 to 1.87 g/cm3 on average. The stone content varies from 20 to 89% and the soil depth fluctuates between 70 and 130 cm. The ERT tests took place on June 1st 2012, April 1st, 2nd and 3rd 2014 and May 12th 2014. We used the Terrameter LS 12 channels (ABEM, Sweden) in 2012 test and the DAS-1 (Multi-Phase Technologies, United States) in 2014. Different electrode configurations and arrays were adopted for different dates (transect and grid arrays and Wenner - Schlumberger, Wenner alpha and dipole-dipole configurations). During all tests, we systematically faced technical problems, mainly related to bad electrode contact. The recorded data show values of contact resistance above 14873 Ω (our target value would be below 3000 Ω). Subsequently, we tried to improve the contact by predrilling the soil and pouring water in the electrode holes. The contact resistance improved to 14040 Ω as minimum. The same procedure with liquid mud was then tested to prevent quick percolation of the water from the electrode location. As a result, the lower contact resistance dropped to 11745 Ω. Finally, we applied about 25 litre of saline solution (CaCl2, 0.75g/L) homogeneously on the electrode grid. The minimum value of

Experimental investigation of the contact resistance of Graphene/MoS2 interface treated with O2 plasma

Science.gov (United States)

Lu, Qin; Liu, Yan; Han, Genquan; Fang, Cizhe; Shao, Yao; Zhang, Jincheng; Hao, Yue

2018-02-01

High contact resistance has been a major bottleneck for MoS2 to achieve high performances among two-dimensional material based optoelectronic and electronic devices. In this study, we investigate the contact resistances of different layered graphene film with MoS2 film with Ti/Au electrodes under different O2 plasma treatment time using the circular transmission line model (CTLM). Annealing process followed O2 plasma process to reduce the oxygen element introduced. Raman and X-ray photoelectric spectroscopy were used to analyze the quality of the materials. Finally, the current and voltage curve indicates good linear characteristics. Under the optimized condition of the O2 plasma treatment, a relatively low contact resistance (∼35.7 Ohm mm) without back gate voltage in single-layer graphene/MoS2 structure at room temperature was achieved compared with the existing reports. This method of introducing graphene as electrodes for MoS2 film demonstrates a remarkable ability to improve the contact resistance, without additional channel doping for two-dimensional materials based devices, which paves the way for MoS2 to be a more promising channel material in optoelectronic and electronic integration.

Relationships among the contact patch length and width, the tire deflection and the rolling resistance of a free-running wheel in a soil bin facility

Energy Technology Data Exchange (ETDEWEB)

Tomaraee, P.; Mardani, A.; Mohebbi, A.; Taghavifar, H.

2015-07-01

Qualitative and quantitative analysis of contact patch length-rolling resistance, contact patch width-rolling resistance and tire deflection-rolling resistance at different wheel load and inflation pressure levels is presented. The experiments were planned in a randomized block design and were conducted in the controlled conditions provided by a soil bin environment utilizing a well-equipped single wheel-tester of Urmia University, Iran. The image processing technique was used for determination of the contact patch length and contact patch width. Analysis of covariance was used to evaluate the correlations. The highest values of contact length and width and tire deflection occurred at the highest wheel load and lowest tire inflation pressure. Contact patch width is a polynomial (order 2) function of wheel load while there is a linear relationship between tire contact length and wheel load as well as between tire deflection and wheel load. Correlations were developed for the evaluation of contact patch length-rolling resistance, contact patch width-rolling resistance and tire deflection-rolling resistance. It is concluded that the variables studied have a significant effect on rolling resistance. (Author)

Improving the contact resistance at low force using gold coated carbon nanotube surfaces

Science.gov (United States)

McBride, J. W.; Yunus, E. M.; Spearing, S. M.

2010-04-01

Investigations to determine the electrical contact performance under repeated cycles at low force conditions for carbon-nanotube (CNT) coated surfaces were performed. The surfaces under investigation consisted of multi-walled CNT synthesized on a silicon substrate and coated with a gold film. These planar surfaces were mounted on the tip of a PZT actuator and contacted with a plated Au hemispherical probe. The dynamic applied force used was 1 mN. The contact resistance (Rc) of these surfaces was investigated with the applied force and with repeated loading cycles performed for stability testing. The surfaces were compared with a reference Au-Au contact under the same experimental conditions. This initial study shows the potential for the application of gold coated CNT surfaces as an interface in low force electrical contact applications.

Determination of work function of graphene under a metal electrode and its role in contact resistance.

Science.gov (United States)

Song, Seung Min; Park, Jong Kyung; Sul, One Jae; Cho, Byung Jin

2012-08-08

Although the work function of graphene under a given metal electrode is critical information for the realization of high-performance graphene-based electronic devices, relatively little relevant research has been carried out to date. In this work, the work function values of graphene under various metals are accurately measured for the first time through a detailed analysis of the capacitance-voltage (C-V) characteristics of a metal-graphene-oxide-semiconductor (MGOS) capacitor structure. In contrast to the high work function of exposed graphene of 4.89-5.16 eV, the work function of graphene under a metal electrode varies depending on the metal species. With a Cr/Au or Ni contact, the work function of graphene is pinned to that of the contacted metal, whereas with a Pd or Au contact the work function assumes a value of ∼4.62 eV regardless of the work function of the contact metal. A study of the gate voltage dependence on the contact resistance shows that the latter case provides lower contact resistance.

Evaluation of contact resistance between carbon fiber/epoxy composite laminate and printed silver electrode for damage monitoring

International Nuclear Information System (INIS)

Jeon, Eun Beom; Kim, Hak Sung; Takahashi, Kosuke

2014-01-01

An addressable conducting network (ACN) makes it possible to monitor the condition of a structure using the electrical resistance between electrodes on the surface of a carbon fiber reinforced plastics (CFRP) structure. To improve the damage detection reliability of the ACN, the contact resistances between the electrodes and CFRP laminates needs to be minimized. In this study, silver nanoparticle electrodes were fabricated via printed electronics techniques on a CFRP composite. The contact resistance between the silver electrodes and CFRP were measured with respect to various fabrication conditions such as the sintering temperature of the silver nano-ink and the surface roughness of the CFRP laminates. The interfaces between the silver electrode and carbon fibers were observed using a scanning electron microscope (SEM). Based on this study, it was found that the lowest contact resistance of 0.3664Ω could be achieved when the sintering temperature of the silver nano-ink and surface roughness were 120 degree C and 0.230 a, respectively.

Rough surface electrical contact resistance considering scale dependent properties and quantum effects

International Nuclear Information System (INIS)

Jackson, Robert L.; Crandall, Erika R.; Bozack, Michael J.

2015-01-01

The objective of this work is to evaluate the effect of scale dependent mechanical and electrical properties on electrical contact resistance (ECR) between rough surfaces. This work attempts to build on existing ECR models that neglect potentially important quantum- and size-dependent contact and electrical conduction mechanisms present due to the asperity sizes on typical surfaces. The electrical conductance at small scales can quantize or show a stepping trend as the contact area is varied in the range of the free electron Fermi wavelength squared. This work then evaluates if these effects remain important for the interface between rough surfaces, which may include many small scale contacts of varying sizes. The results suggest that these effects may be significant in some cases, while insignificant for others. It depends on the load and the multiscale structure of the surface roughness

Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

KAUST Repository

Almuhammadi, Khaled Hamdan

2016-12-29

Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a method includes preparing a pretreated target area on a CFRP composite surface using laser pulsed irradiation and bonding an electrode to exposed fibers in the pretreated target area. The surface preparation can allow the electrode to have a low contact resistance with the CFRP composite.

An Experimental Study on Heat Conduction and Thermal Contact Resistance for the AlN Flake

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2013-01-01

Full Text Available The electrical technology has been a fast development over the past decades. Moreover, the tendency of microelements and dense division multiplex is significantly for the electrical industries. Therefore, the high thermal conductible and electrical insulating device will be popular and important. It is well known that AlN still maintains stablility in the high temperature. This is quite attractive for the research and development department. Moreover, the thermal conduct coefficient of AlN is several times larger than the others. Therefore, it has been thought to play an important role for the radiator of heat source in the future. Therefore, this paper is focused on the studies of heat conduction and thermal contact resistance between the AlN flake and the copper specimens. The heating temperatures and the contact pressures were selected as the experimental parameters. According to the experimental results, the materials are soft and the real contact areas between the interfaces significantly increase under higher temperatures. As a result, the thermal contact resistance significantly decreases and the heat transfer rate increases with increasing the heating temperature or the contact pressures.

Laser cladding of copper with molybdenum for wear resistance enhancement in electrical contacts

International Nuclear Information System (INIS)

Ng, K.W.; Man, H.C.; Cheng, F.T.; Yue, T.M.

2007-01-01

Laser cladding of Mo on Cu has been attempted with the aim of enhancing the wear resistance and hence increasing the service life of electrical contacts made of Cu. In order to overcome the difficulties arising from the large difference in thermal properties and the low mutual solubility between Cu and Mo, Ni was introduced as an intermediate layer between Mo and Cu. The Ni and Mo layers were laser clad one after the other to form a sandwich layer of Mo/Ni/Cu. Excellent bonding between the clad layer and the Cu substrate was ensured by strong metallurgical bonding. The hardness of the surface of the clad layer is seven times higher than that of the Cu substrate. Pin-on-disc wear tests consistently showed that the abrasive wear resistance of the clad layer was also improved by a factor of seven as compared with untreated Cu substrate. The specific electrical contact resistance of the clad surface was about 5.6 x 10 -7 Ω cm 2

Methicillin resistance of airborne coagulase-negative staphylococci in homes of persons having contact with a hospital environment.

Science.gov (United States)

Lis, Danuta O; Pacha, Jerzy Z; Idzik, Danuta

2009-04-01

The persons having contact with a hospital environment (hospital personnel workers and discharged patients) are highly exposed to colonization with multidrug-resistant bacteria. The aim of this study was to evaluate the airborne Staphylococcus genus features in homes in which inhabitants have had contact with the hospital environment. Airborne bacteria were collected using a 6-stage Anderson impactor. The Staphylococcus species composition and resistance to methicillin, and other antimicrobial agents among 3 coagulase-negative staphylococci (CNS) species (S cohnii spp cohnii, S epidermidis, S hominis), were determined. Antibiotic resistance of isolates was tested using the agar screen method with methicillin, the polymerase chain reaction technique to detect the mecA gene, and the disk diffusion method. A higher prevalence of methicillin-resistant (MR) strains among the species isolated (40% of S epidermidis, 40% of S hominis, and 60% of S cohnii spp cohnii) was found in homes of persons who had contact with a hospital environment compared with the reference homes (only 12% of S hominis). The mecA gene was revealed in all MR S epidermidis strains and in some MR S hominis (50%) and S cohnii spp cohnii (33%) strains. All isolated MR CNS strains were susceptible to vancomycin, rifampicin, and linezolid. High numbers of airborne multidrug-resistant MR CNS in the homes of persons having contact with a hospital environment indicates that such inhabitants pose a risk of intrafamilial spreading of MR strains via air.

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

International Nuclear Information System (INIS)

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

2010-01-01

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

3D Modeling and Testing of Contact Problems in Resistance Welding

DEFF Research Database (Denmark)

Nielsen, Chris Valentin

A generic, electro-thermo-mechanically coupled finite element program is developed for three-dimensional simulation of resistance welding. The developed computer program has reached a level of a complete standalone software that can be utilized as a tool in the analysis of resistance welding...... of resistance welding processes, which cover a wide range of spot welding and projection welding applications. Three-dimensional simulation of spot welding enables the analysis of critical effects like electrode misalignment and shunt effects between consecutive spots. A single-sided spot welding case involving...... three-dimensional contact is also presented. This case was suggested by and discussed with a German steel manufacturer. When it comes to projection welding, a natural need for three-dimensional analysis arises in many cases because of the involved geometries. Cross-wire welding and welding of square...

Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealing

DEFF Research Database (Denmark)

Clausen, Thomas; Leistiko, Otto

1993-01-01

process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic......Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation...

Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Boksteen, B.K.; Boksteen, B.K.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2007-01-01

A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and

Recognition of double-stranded DNA using energetically activated duplexes with interstrand zippers of 1-, 2-or 4-pyrenyl-functionalized O2 '-alkylated RNA monomers

DEFF Research Database (Denmark)

Karmakar, Saswata; Madsen, Andreas Stahl; Guenther, Dale C.

2014-01-01

'-alkylated uridine monomers X-Z by means of thermal denaturation experiments, optical spectroscopy, force-field simulations and recognition experiments using DNA hairpins as model targets. We demonstrate that Invaders with +1 interstrand zippers of X or Y monomers efficiently recognize mixed-sequence DNA...

Thermal contact resistance measurement of conduction cooled binary current lead joint block in cryocooler based self field I-V characterization facility

Energy Technology Data Exchange (ETDEWEB)

Kundu, Ananya, E-mail: ananya@ipr.res.in; Das, Subrat Kumar; Agarwal, Anees Bano Pooja; Pradhan, Subrata [Institute for Plasma Research, Bhat, Gandhinagar, Gujarat 382428 (India)

2016-05-23

In the present study thermal resistance of conduction cooled current lead joint block employing two different interfacial material namely AlN sheet and Kapton Film have been studied in the temperature range 5K-35K. In each case, the performance of different interlayer materials e.g. Indium foil for moderately pressurized contacts (contact pressure <1 MPa), and Apiezon N Grease, GE varnish for low pressurized contact (contact pressure <1 MPa) is studied. The performances of AlN joint with Indium foil and with Apeizon N Grease are studied and it is observed that the contact resistance reduces more with indium foil as compared to greased contact. The contact resistance measurements of Kapton film with Apiezon N grease and with GE varnish were also carried out in the same temperature range. A comparative study of AlN joint with Indium foil and Kapton with GE varnish as filler material is carried out to demonstrate better candidate material among Kapton and AlN for a particular filler material in the same temperature range.

The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

Directory of Open Access Journals (Sweden)

Florent Ravaux

2017-06-01

Full Text Available To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM structures of molybdenum (Mo were fabricated on indium phosphide (InP substrate on the top of an indium gallium arsenide (InGaAs layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS showed that the amount of oxides (InxOy, GaxOy or AsxOy was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.

Series Resistance Analysis of Passivated Emitter Rear Contact Cells Patterned Using Inkjet Printing

Directory of Open Access Journals (Sweden)

Martha A. T. Lenio

2012-01-01

Full Text Available For higher-efficiency solar cell structures, such as the Passivated Emitter Rear Contact (PERC cells, to be fabricated in a manufacturing environment, potentially low-cost techniques such as inkjet printing and metal plating are desirable. A common problem that is experienced when fabricating PERC cells is low fill factors due to high series resistance. This paper identifies and attempts to quantify sources of series resistance in inkjet-patterned PERC cells that employ electroless or light-induced nickel-plating techniques followed by copper light-induced plating. Photoluminescence imaging is used to determine locations of series resistance losses in these inkjet-patterned and plated PERC cells.

A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

International Nuclear Information System (INIS)

Mtangi, W.; Auret, F. D.; Janse van Rensburg, P. J.; Coelho, S. M. M.; Legodi, M. J.; Nel, J. M.; Meyer, W. E.; Chawanda, A.

2011-01-01

A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and conventional deep level transient spectroscopy (DLTS) measurements. Room temperature IV measurements reveal the dominance of pure thermionic emission on the resistively evaporated contacts, while the e-beam deposited contacts show the dominance of generation recombination at low voltages, -10 A at a reverse voltage of 1.0 V whereas the e-beam deposited contacts have reverse currents of the order of 10 -6 A at 1.0 V. Average ideality factors have been determined as (1.43 ± 0.01) and (1.66 ± 0.02) for the resistively evaporated contacts and e-beam deposited contacts, respectively. The IV barrier heights have been calculated as (0.721 ± 0.002) eV and (0.624 ± 0.005) eV for the resistively evaporated and e-beam deposited contacts, respectively. Conventional DLTS measurements reveal the presence of three prominent defects in both the resistive and e-beam contacts. Two extra peaks with energy levels of 0.60 and 0.81 eV below the conduction band minimum have been observed in the e-beam deposited contacts. These have been explained as contributing to the generation recombination current that dominates at low voltages and high leakage currents. Based on the reverse current at 1.0 V, the degree of rectification, the dominant current transport mechanism and the observed defects, we conclude that the resistive evaporation technique yields better quality Schottky contacts for use in solar cells and ultraviolet detectors compared to the e-beam deposition technique. The 0.60 eV has been identified as possibly related to the unoccupied level for the doubly charged oxygen vacancy, V o 2+ .

The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors

International Nuclear Information System (INIS)

Lee, Sunghwan; Park, Hongsik; Paine, David C.

2012-01-01

The effect of contact resistance on the measurement of the field effect mobility of compositionally homogeneous channel indium zinc oxide (IZO)/IZO metallization thin film transistors (TFTs) is reported. The TFTs studied in this work operate in depletion mode as n-channel field effect devices with a field effect mobility calculated in the linear regime (μ FE ) of 20 ± 1.9 cm 2 /Vs and similar of 18 ± 1.3 cm 2 /Vs when calculated in the saturation regime (μ FE sat ). These values, however, significantly underestimate the channel mobility since a large part of the applied drain voltage is dropped across the source/drain contact interface. The transmission line method was employed to characterize the contact resistance and it was found that the conducting-IZO/semiconducting-IZO channel contact is highly resistive (specific contact resistance, ρ C > 100 Ωcm 2 ) and, further, this contact resistance is modulated with applied gate voltage. Accounting for the contact resistance (which is large and modulated by gate voltage), the corrected μ FE is shown to be 39 ± 2.6 cm 2 /Vs which is consistent with Hall mobility measurements of high carrier density IZO.

Application Of Artificial Neural Networks In Modeling Of Manufactured Front Metallization Contact Resistance For Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Musztyfaga-Staszuk M.

2015-09-01

Full Text Available This paper presents the application of artificial neural networks for prediction contact resistance of front metallization for silicon solar cells. The influence of the obtained front electrode features on electrical properties of solar cells was estimated. The front electrode of photovoltaic cells was deposited using screen printing (SP method and next to manufactured by two methods: convectional (1. co-fired in an infrared belt furnace and unconventional (2. Selective Laser Sintering. Resistance of front electrodes solar cells was investigated using Transmission Line Model (TLM. Artificial neural networks were obtained with the use of Statistica Neural Network by Statsoft. Created artificial neural networks makes possible the easy modelling of contact resistance of manufactured front metallization and allows the better selection of production parameters. The following technological recommendations for the screen printing connected with co-firing and selective laser sintering technology such as optimal paste composition, morphology of the silicon substrate, co-firing temperature and the power and scanning speed of the laser beam to manufacture the front electrode of silicon solar cells were experimentally selected in order to obtain uniformly melted structure well adhered to substrate, of a small front electrode substrate joint resistance value. The prediction possibility of contact resistance of manufactured front metallization is valuable for manufacturers and constructors. It allows preserving the customers’ quality requirements and bringing also measurable financial advantages.

Effect of electroless nickel on the series resistance of high-efficiency inkjet printed passivated emitter rear contacted solar cells

Energy Technology Data Exchange (ETDEWEB)

Lenio, Martha A.T. [REC Technology US, Inc., 1159 Triton Dr., Foster City, CA 94301 (United States); Lennon, A.J.; Ho-Baillie, A.; Wenham, S.R. [ARC Photovoltaics Centre of Excellence, University of NSW, Sydney, NSW 2052 (Australia)

2010-12-15

Many existing and emerging solar cell technologies rely on plated metal to form the front surface contacts, and aluminium to form the rear contact. Interactions between the metal plating solutions and the aluminium rear can have a significant impact on cell performance. This paper describes non-uniform nickel deposition on the sintered aluminium rear surface of passivated emitter and rear contacted (PERC) cells patterned using an inkjet printing technique. Rather than being plated homogeneously over the entire rear surface as is observed on an alloyed aluminium rear, the nickel is plated only in the vicinity of the point openings in the rear surface silicon dioxide dielectric layer. Furthermore, this non-uniform nickel deposition was shown to increase the contact resistance of the rear point contacts by an order of magnitude, resulting in higher series resistance values for these fabricated PERC cells. (author)

Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

International Nuclear Information System (INIS)

Shaforost, O.; Wang, K.; Adabi, M.; Guo, Z.; Hanham, S.; Klein, N.; Goniszewski, S.; Gallop, J.; Hao, L.

2015-01-01

A method for contact-free determination of the sheet resistance of large-area and arbitrary shaped wafers or sheets coated with graphene and other (semi) conducting ultrathin layers is described, which is based on an open dielectric loaded microwave cavity. The sample under test is exposed to the evanescent resonant field outside the cavity. A comparison with a closed cavity configuration revealed that radiation losses have no significant influence of the experimental results. Moreover, the microwave sheet resistance results show good agreement with the dc conductivity determined by four-probe van der Pauw measurements on a set of CVD samples transferred on quartz. As an example of a practical application, correlations between the sheet resistance and deposition conditions for CVD graphene transferred on quartz wafers are described. Our method has a high potential as measurement standard for contact-free sheet resistance measurement and mapping of large area graphene samples

Mechanical Contact Experiments and Simulations

DEFF Research Database (Denmark)

Nielsen, Chris Valentin; Martins, P; Zhang, W.

2011-01-01

Mechanical contact is studied under dynamic development by means of a combined numerical and experimental investigation. The experiments are designed to allow dynamical development of non-planar contact areas with significant expansion in all three directions as the load is increased. Different....... The overall investigation serves for testing and validating the numerical implementation of the mechanical contact, which is one of the main contributions to a system intended for 3D simulation of resistance welding. Correct modelling of contact between parts to be welded, as well as contact with electrodes......, is crucial for satisfactory modelling of the resistance welding process. The resistance heating at the contact interfaces depends on both contact area and pressure, and as the contact areas develop dynamically, the presented tests are relevant for assessing the validity and accuracy of the mechanical contact...

Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode

Energy Technology Data Exchange (ETDEWEB)

Vecchiola, Aymeric [Laboratoire de Génie électrique et électronique de Paris (GeePs), UMR 8507 CNRS-CentraleSupélec, Paris-Sud and UPMC Universities, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette (France); Concept Scientific Instruments, ZA de Courtaboeuf, 2 rue de la Terre de Feu, 91940 Les Ulis (France); Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); Chrétien, Pascal; Schneegans, Olivier; Mencaraglia, Denis; Houzé, Frédéric, E-mail: frederic.houze@geeps.centralesupelec.fr [Laboratoire de Génie électrique et électronique de Paris (GeePs), UMR 8507 CNRS-CentraleSupélec, Paris-Sud and UPMC Universities, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette (France); Delprat, Sophie [Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); UPMC, Université Paris 06, 4 place Jussieu, 75005 Paris (France); Bouzehouane, Karim; Seneor, Pierre; Mattana, Richard [Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); Tatay, Sergio [Molecular Science Institute, University of Valencia, 46980 Paterna (Spain); Geffroy, Bernard [Lab. Physique des Interfaces et Couches minces (PICM), UMR 7647 CNRS-École polytechnique, 91128 Palaiseau (France); Lab. d' Innovation en Chimie des Surfaces et Nanosciences (LICSEN), NIMBE UMR 3685 CNRS-CEA Saclay, 91191 Gif-sur-Yvette (France); and others

2016-06-13

An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider range of resistance measurement (over 10 decades) without any manual switching, which is a major advantage for the characterization of materials with large on-sample resistance variations. After describing the basics of the set-up, we report on preliminary investigations focused on academic samples of self-assembled monolayers with various thicknesses as a demonstrator of the imaging capabilities of our instrument, from qualitative and semi-quantitative viewpoints. Then two application examples are presented, regarding an organic photovoltaic thin film and an array of individual vertical carbon nanotubes. Both attest the relevance of the technique for the control and optimization of technological processes.

Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

KAUST Repository

Park, Woojin; Shaikh, Sohail F.; Min, Jungwook; Lee, Sang Kyung; Lee, Byoung Hun; Hussain, Muhammad Mustafa

2018-01-01

an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width

Risk Factors for Carbapenemase-Producing Carbapenem-Resistant Enterobacteriaceae (CP-CRE) Acquisition Among Contacts of Newly Diagnosed CP-CRE Patients.

Science.gov (United States)

Schwartz-Neiderman, Anat; Braun, Tali; Fallach, Noga; Schwartz, David; Carmeli, Yehuda; Schechner, Vered

2016-10-01

OBJECTIVE Carbapenemase-producing carbapenem-resistant Enterobacteriaceae (CP-CRE) are extremely drug-resistant pathogens. Screening of contacts of newly identified CP-CRE patients is an important step to limit further transmission. We aimed to determine the risk factors for CP-CRE acquisition among patients exposed to a CP-CRE index patient. METHODS A matched case-control study was performed in a tertiary care hospital in Israel. The study population was comprised of patients who underwent rectal screening for CP-CRE following close contact with a newly identified CP-CRE index patient. Cases were defined as positive tests for CP-CRE. For each case patient, 2 matched controls were randomly selected from the pool of contacts who tested negative for CP-CRE following exposure to the same index case. Bivariate and multivariate analyses were conducted using conditional logistic regression. RESULTS In total, 53 positive contacts were identified in 40 unique investigations (896 tests performed on 735 contacts) between October 6, 2008, and June 7, 2012. bla KPC was the only carbapenemase identified. In multivariate analysis, risk factors for CP-CRE acquisition among contacts were (1) contact with an index patient for ≥3 days (odds ratio [OR], 9.8; 95% confidence interval [CI], 2.0-48.9), (2) mechanical ventilation (OR, 4.1; 95% CI, 1.4-11.9), and (3) carriage or infection with another multidrug-resistant organism (MDRO; OR, 2.6; 95% CI, 1.0-7.1). Among patients who received antibiotics, cephalosporins were associated with a lower risk of acquisition. CONCLUSIONS Patient characteristics (ventilation and carriage of another MDRO) as well as duration of contact are risk factors for CP-CRE acquisition among contacts. The role of cephalosporins requires further study. Infect Control Hosp Epidemiol 2016;1-7.

Coordinate transformation in the model of long Josephson contacts: geometrically equivalent contacts

International Nuclear Information System (INIS)

Semerdzhieva, E.G.; Boyadzhiev, T.L.; ); Shukrinov, Yu.M.; Physical Technical Institute Dushanbe, 734063

2005-01-01

The transition from model of long Josephson variable-width contact to the contact model with coordinate-dependent Josephson current amplitude is realized by transforming the coordinates. This sets up a correspondence between Josephson contacts of variable width and quasi-one-dimensional contacts of variable thickness barrier layer. It is shown, that for contacts of exponentially varying width the barrier layer of the corresponding quasi-one-dimensional contact contains the distributed resistive inhomogeneity which is an attractor to magnetic flux vortices. With numerical experiments, a 'critical current-magnetic field' dependence for a resistive microinhomogeneity Josephson contact was plotted, and its comparison with the critical curve for a contact of exponentially varying width was made. Thus, this demonstrates that the distributed inhomogeneity may be replaced by a local one at the JC end what technologically, may offer definite advantages

Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.k [Department of Display Materials Engineering, Kyung Hee University, 1 Seochoen-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Yi, Min-Su [Department of Materials Science and Engineering, Kyungpook National University, Sangju, Gyeongbuk, 742-711 (Korea, Republic of); Lee, Sung-Nam [Department of Engineering in Energy and Applied Chemistry, Silla University, Busan, 617-736 (Korea, Republic of)

2009-05-29

The electrical, structural, and optical characteristics of Ag/ZnO-doped In{sub 2}O{sub 3} (IZO) ohmic contacts to p-type GaN:Mg (2.5 x 10{sup 17} cm{sup -3}) were investigated. The Ag and IZO (10 nm/50 nm) layers were prepared by thermal evaporation and linear facing target sputtering, respectively. Although the as-deposited and 400 {sup o}C annealed samples showed rectifying behavior, the 500 and 600 {sup o}C annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact. The annealing of the contact at 600 {sup o}C for 3 min in a vacuum ({approx} 10{sup -3} Torr) resulted in the lowest specific contact resistivity of 1.8 x 10{sup -4} {Omega}.cm{sup 2} and high transparency of 78% at a wavelength of 470 nm. Using Auger electron spectroscopy, depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the electrical properties of the Ag/IZO contacts.

Serum vitamin d level and susceptibility to multidrug-resistant tuberculosis among household contacts

Science.gov (United States)

Herlina, N.; Sinaga, B. Y. M.; Siagian, P.; Mutiara, E.

2018-03-01

Low levels of vitamin D is a predisposing factor for Multidrug-resistant tuberculosis. Family members in contact with the patient are also at risk of infection. Currently, there is no study that compares vitamin D levels between MDR-TB patients and household contact. This study aims to identify the association between level vitamin D within MDR-TB occurrence. This was a case-control study, with the number of samples in each group (MDR-TB) patients and household contactswere40 people. Each member of each group was checked for vitamin D levels using enzyme-linked immunosorbent assay (ELISA) technique. Statistical analysis was by using Chi-Square analysis using SPSS. Mean levels of vitamin D in MDR-TB patients were 32.21, household contact 31.7. There was anosignificant association between vitamin D levels and MDR-TB occurrence (p=1.0).No significant associationbetween vitamin D level with theMDR-TB occurrence.

HAb18G/CD147 cell-cell contacts confer resistance of a HEK293 subpopulation to anoikis in an E-cadherin-dependent manner

Directory of Open Access Journals (Sweden)

Zhu Ping

2010-04-01

Full Text Available Abstract Background Acquisition of resistance to "anoikis" facilitates the survival of cells under independent matrix-deficient conditions, such as cells in tumor progression and the production of suspension culture cells for biomedical engineering. There is evidence suggesting that CD147, an adhesion molecule associated with survival of cells in tumor metastasis and cell-cell contacts, plays an important role in resistance to anoikis. However, information regarding the functions of CD147 in mediating cell-cell contacts and anoikis-resistance remains limited and even self-contradictory. Results An anoikis-resistant clone (HEK293ar, derived from anoikis-sensitive parental Human Embryonic Kidney 293 cells, survived anoikis by the formation of cell-cell contacts. The expression of HAb18G/CD147 (a member of the CD147 family was upregulated and the protein was located at cell-cell junctions. Upregulation of HAb18G/CD147 in suspended HEK293ar cells suppressed anoikis by mediating the formation of cell-cell adhesions. Anoikis resistance in HEK293ar cells also required E-cadherin-mediated cell-cell contacts. Knock-down of HAb18G/CD147 and E-cadherin inhibited cell-cell contacts formation and increased anoikis sensitivity respectively. When HAb18G/CD147 was downregulated, E-cadherin expression in HEK293ar cells was significantly suppressed; however, knockdown of E-cadherin by E-cadherin siRNA or blocking of E-cadherin binding activity with a specific antibody and EDTA had no significant effect on HAb18G/CD147 expression. Finally, pretreatment with LY294002, a phosphoinositide 3-kinase (PI3K/AKT inhibitor, disrupted cell-cell contacts and decreased cell number, but this was not the case in cells treated with the extracellular signal-regulated kinase (ERK inhibitor PD98059. Conclusions Our results provide new evidence that HAb18G/CD147-mediated cell-cell contact confers anoikis resistance in an E-cadherin-dependent manner; and cell-cell contact mediated

Reduction of Ag–Si electrical contact resistance by selective RF heating

International Nuclear Information System (INIS)

De Wijs, W-J A; Ljevar, S; Van de Sande, M J; De With, G

2016-01-01

Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cells using 27 MHz radio-frequency inductive fields is shown. IR measurements of silicon substrates show that above 450 °C the heating rate of the samples increases sharply, indicating that both the silver and the silicon are heated. By moving the substrate with respect to the RF antenna and modulation of the RF field, silicon wafers were heated reproducibly above 450 °C with heating rates in excess of 200 °C s −1 . Furthermore, selective heating of lines of pre-sintered silver paste was shown below the 450 °C threshold on silicon substrates. The orientation of the silver tracks relative to the RF antenna appeared to be crucial for homogeneity of heating. Transmission line measurements show a clear effect on contact formation between the silver lines and the silicon substrate. To lower the contact resistance sufficiently for industrial feasibility, a high temperature difference between the Si substrate and the Ag tracks is required. The present RF heating process does not match the time scale needed for contact formation between silver and silicon sufficiently, but the significantly improved process control achieved shows promise for applications requiring fast heating and cooling rates. (paper)

A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2008-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was

Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

KAUST Repository

Almuhammadi, Khaled Hamdan; Lubineau, Gilles; Alfano, Marco Francesco; Buttner, Ulrich

2016-01-01

Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a

Lack of the purinergic receptor P2X7 results in resistance to contact hypersensitivity

Science.gov (United States)

Weber, Felix C.; Esser, Philipp R.; Müller, Tobias; Ganesan, Jayanthi; Pellegatti, Patrizia; Simon, Markus M.; Zeiser, Robert; Idzko, Marco; Jakob, Thilo

2010-01-01

Sensitization to contact allergens requires activation of the innate immune system by endogenous danger signals. However, the mechanisms through which contact allergens activate innate signaling pathways are incompletely understood. In this study, we demonstrate that mice lacking the adenosine triphosphate (ATP) receptor P2X7 are resistant to contact hypersensitivity (CHS). P2X7-deficient dendritic cells fail to induce sensitization to contact allergens and do not release IL-1β in response to lipopolysaccharide (LPS) and ATP. These defects are restored by pretreatment with LPS and alum in an NLRP3- and ASC-dependent manner. Whereas pretreatment of wild-type mice with P2X7 antagonists, the ATP-degrading enzyme apyrase or IL-1 receptor antagonist, prevents CHS, IL-1β injection restores CHS in P2X7-deficient mice. Thus, P2X7 is a crucial receptor for extracellular ATP released in skin in response to contact allergens. The lack of P2X7 triggering prevents IL-1β release, which is an essential step in the sensitization process. Interference with P2X7 signaling may be a promising strategy for the prevention of allergic contact dermatitis. PMID:21059855

The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

Science.gov (United States)

Rezvanian, O.; Brown, C.; Zikry, M. A.; Kingon, A. I.; Krim, J.; Irving, D. L.; Brenner, D. W.

2008-07-01

It is shown that measured and calculated time-dependent electrical resistances of closed gold Ohmic switches in radio frequency microelectromechanical system (rf-MEMS) devices are well described by a power law that can be derived from a single asperity creep model. The analysis reveals that the exponent and prefactor in the power law arise, respectively, from the coefficient relating creep rate to applied stress and the initial surface roughness. The analysis also shows that resistance plateaus are not, in fact, limiting resistances but rather result from the small coefficient in the power law. The model predicts that it will take a longer time for the contact resistance to attain a power law relation with each successive closing of the switch due to asperity blunting. Analysis of the first few seconds of the measured resistance for three successive openings and closings of one of the MEMS devices supports this prediction. This work thus provides guidance toward the rational design of Ohmic contacts with enhanced reliabilities by better defining variables that can be controlled through material selection, interface processing, and switch operation.

Vertical Soil Profiling Using a Galvanic Contact Resistivity Scanning Approach

Directory of Open Access Journals (Sweden)

Luan Pan

2014-07-01

Full Text Available Proximal sensing of soil electromagnetic properties is widely used to map spatial land heterogeneity. The mapping instruments use galvanic contact, capacitive coupling or electromagnetic induction. Regardless of the type of instrument, the geometrical configuration between signal transmitting and receiving elements typically defines the shape of the depth response function. To assess vertical soil profiles, many modern instruments use multiple transmitter-receiver pairs. Alternatively, vertical electrical sounding can be used to measure changes in apparent soil electrical conductivity with depth at a specific location. This paper examines the possibility for the assessment of soil profiles using a dynamic surface galvanic contact resistivity scanning approach, with transmitting and receiving electrodes configured in an equatorial dipole-dipole array. An automated scanner system was developed and tested in agricultural fields with different soil profiles. While operating in the field, the distance between current injecting and measuring pairs of rolling electrodes was varied continuously from 40 to 190 cm. The preliminary evaluation included a comparison of scan results from 20 locations to shallow (less than 1.2 m deep soil profiles and to a two-layer soil profile model defined using an electromagnetic induction instrument.

Rapid detection of DNA-interstrand and DNA-protein cross-links in mammalian cells by gravity-flow alkaline elution

International Nuclear Information System (INIS)

Hincks, J.R.; Coulombe, R.A. Jr.

1989-01-01

Alkaline elution is a sensitive and commonly used technique to detect cellular DNA damage in the form of DNA strand breaks and DNA cross-links. Conventional alkaline elution procedures have extensive equipment requirements and are tedious to perform. Our laboratory recently presented a rapid, simplified, and sensitive modification of the alkaline elution technique to detect carcinogen-induced DNA strand breaks. In the present study, we have further modified this technique to enable the rapid characterization of chemically induced DNA-interstrand and DNA-protein associated cross-links in cultured epithelial cells. Cells were exposed to three known DNA cross-linking agents, nitrogen mustard (HN 2 ), mitomycin C (MMC), or ultraviolet irradiation (UV). One hour exposures of HN 2 at 0.25, 1.0, and 4.0 microM or of MMC at 20, 40, and 60 microM produced a dose-dependent induction of total DNA cross-links by these agents. Digestion with proteinase K revealed that HN 2 and MMC induced both DNA-protein cross-links and DNA-interstrand cross-links. Ultraviolet irradiation induced both DNA cross-links and DNA strand breaks, the latter of which were either protein and nonprotein associated. The results demonstrate that gravity-flow alkaline elution is a sensitive and accurate method to characterize the molecular events of DNA cross-linking. Using this procedure, elution of DNA from treated cells is completed in 1 hr, and only three fractions per sample are analyzed. This method may be useful as a rapid screening assay for genotoxicity and/or as an adjunct to other predictive assays for potential mutagenic or carcinogenic agents

Combination of Bifunctional Alkylating Agent and Arsenic Trioxide Synergistically Suppresses the Growth of Drug-Resistant Tumor Cells

Directory of Open Access Journals (Sweden)

Pei-Chih Lee

2010-05-01

Full Text Available Drug resistance is a crucial factor in the failure of cancer chemotherapy. In this study, we explored the effect of combining alkylating agents and arsenic trioxide (ATO on the suppression of tumor cells with inherited or acquired resistance to therapeutic agents. Our results showed that combining ATO and a synthetic derivative of 3a-aza-cyclopenta[a]indenes (BO-1012, a bifunctional alkylating agent causing DNA interstrand cross-links, was more effective in killing human cancer cell lines (H460, H1299, and PC3 than combining ATO and melphalan or thiotepa. We further demonstrated that the combination treatment of H460 cells with BO-1012 and ATO resulted in severe G2/M arrest and apoptosis. In a xenograft mouse model, the combination treatment with BO-1012 and ATO synergistically reduced tumor volumes in nude mice inoculated with H460 cells. Similarly, the combination of BO-1012 and ATO effectively reduced the growth of cisplatin-resistant NTUB1/P human bladder carcinoma cells. Furthermore, the repair of BO-1012-induced DNA interstrand cross-links was significantly inhibited by ATO, and consequently, γH2AX was remarkably increased and formed nuclear foci in H460 cells treated with this drug combination. In addition, Rad51 was activated by translocating and forming foci in nuclei on treatment with BO-1012, whereas its activation was significantly suppressed by ATO. We further revealed that ATO might mediate through the suppression of AKT activity to inactivate Rad51. Taken together, the present study reveals that a combination of bifunctional alkylating agents and ATO may be a rational strategy for treating cancers with inherited or acquired drug resistance.

Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping.

Science.gov (United States)

Chambers, Scott A; Gu, Meng; Sushko, Peter V; Yang, Hao; Wang, Chongmin; Browning, Nigel D

2013-08-07

Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DNA interstrand cross-link repair: understanding role of Fanconi anemia pathway and therapeutic implications.

Science.gov (United States)

Shukla, Pallavi; Solanki, Avani; Ghosh, Kanjaksha; Vundinti, Babu Rao

2013-11-01

Interstrand cross-links (ICLs) are extremely toxic DNA lesions that prevent DNA double-helix separation due to the irreversible covalent linkage binding of some agents on DNA strands. Agents that induce these ICLs are thus widely used as chemotherapeutic drugs but may also lead to tumor growth. Fanconi anemia (FA) is a rare genetic disorder that leads to ICL sensitivity. This review provides update on current understanding of the role of FA proteins in repairing ICLs at various stages of cell cycle. We also discuss link between DNA cross-link genotoxicity caused by aldehydes in FA pathway. Besides this, we summarize various ICL agents that act as drugs to treat different types of tumors and highlight strategies for modulating ICL sensitivity for therapeutic interventions that may be helpful in controlling cancer and life-threatening disease, FA. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Electrical Resistance Measurements and Microstructural Characterization of the Anode/Interconnect Contact in Simulated Anode-Side SOFC Conditions

DEFF Research Database (Denmark)

Harthøj, Anders; Alimadadi, Hossein; Holt, Tobias

2015-01-01

in phase transformation of the steel and in formation of oxides with a poor electrical conductivity in the anode. In this study, the area specific resistance (ASR) of the steel Crofer 22 APU, in contact with a Ni/YSZ anode with and without a tape casted CeO2 barrier layer was measured in simulated SOFC...... anode conditions at 800◦C. The microstructure in the contact area was characterized using scanning electron microscopy techniques. The ASR was low for the steel in direct contact with the Ni/YSZ anode. Nickel diffusion into the steel resulted in a fine grained zone, which was identified as ferrite...

Estimating the Contact Endurance of the AISI 321 Stainless Steel Under Contact Gigacycle Fatigue Tests

Science.gov (United States)

Savrai, R. A.; Makarov, A. V.; Osintseva, A. L.; Malygina, I. Yu.

2018-02-01

Mechanical testing of the AISI 321 corrosion resistant austenitic steel for contact gigacycle fatigue has been conducted with the application of a new method of contact fatigue testing with ultrasonic frequency of loading according to a pulsing impact "plane-to-plane" contact scheme. It has been found that the contact endurance (the ability to resist the fatigue spalling) of the AISI 321 steel under contact gigacycle fatigue loading is determined by its plasticity margin and the possibility of additional hardening under contact loading. It is demonstrated that the appearance of localized deep and long areas of spalling on a material surface can serve as a qualitative characteristic for the loss of the fatigue strength of the AISI 321 steel under impact contact fatigue loading. The value of surface microhardness measured within contact spots and the maximum depth of contact damages in the peripheral zone of contact spots can serve as quantitative criteria for that purpose.

Evaluation of pet contact as a risk factor for carriage of multidrug-resistant staphylococci in nursing home residents.

Science.gov (United States)

Gandolfi-Decristophoris, Paola; De Benedetti, Anna; Petignat, Christiane; Attinger, Monica; Guillaume, Jan; Fiebig, Lena; Hattendorf, Jan; Cernela, Nicole; Regula, Gertraud; Petrini, Orlando; Zinsstag, Jakob; Schelling, Esther

2012-03-01

Pets, often used as companionship and for psychological support in the therapy of nursing home residents, have been implicated as reservoirs for antibiotic-resistant bacteria. We investigated the importance of pets as reservoirs of multidrug-resistant (MDR) staphylococci in nursing homes. We assessed the carriage of MDR staphylococci in pets and in 2 groups of residents, those living in nursing homes with pets and those living without pet contacts. We collected demographic, health status, and human-pet contact data by means of questionnaires. We assessed potential bacteria transmission pathways by investigating physical resident-to-pet contact. The observed prevalence of MDR staphylococci carriage was 84/229 (37%) in residents living with pets and 99/216 (46%) in those not living with pets (adjusted odds ratio [aOR], 0.6; 95% confidence interval [CI], 0.4-0.9). Active pet contact was associated with lower carriage of MDR staphylococci (aOR, 0.5; 95% CI, 0.4-0.8). Antibiotic treatment during the previous 3 months was associated with significantly increased risk for MDR carriage in residents (aOR, 3.1; 95% CI, 1.8-5.7). We found no evidence that the previously reported benefits of pet contact are compromised by the increased risk of carriage of MDR staphylococci in residents associated with interaction with these animals in nursing homes. Thus, contact with pets, always under good hygiene standards, should be encouraged in these settings. Copyright © 2012 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Mosby, Inc. All rights reserved.

Evaluation of contact precautions for methicillin-resistant Staphylococcus aureus and vancomycin-resistant Enterococcus.

Science.gov (United States)

Bardossy, Ana Cecilia; Alsafadi, Muhammad Yasser; Starr, Patricia; Chami, Eman; Pietsch, Jennifer; Moreno, Daniela; Johnson, Laura; Alangaden, George; Zervos, Marcus; Reyes, Katherine

2017-12-01

There are limited controlled data demonstrating contact precautions (CPs) prevent methicillin-resistant Staphylococcus aureus (MRSA) and vancomycin-resistant Enterococcus (VRE) infections in endemic settings. We evaluated changes in hospital-acquired MRSA and VRE infections after discontinuing CPs for these organisms. This is a retrospective study done at an 800-bed teaching hospital in urban Detroit. CPs for MRSA and VRE were discontinued hospital-wide in 2013. Data on MRSA and VRE catheter-associated urinary tract infections (CAUTIs), ventilator-associated pneumonia (VAP), central line-associated bloodstream infections (CLABSIs), surgical site infections (SSIs), and hospital-acquired MRSA bacteremia (HA-MRSAB) rates were compared before and after CPs discontinuation. There were 36,907 and 40,439 patients hospitalized during the two 12-month periods: CPs and no CPs. Infection rates in the CPs and no-CPs periods were as follows: (1) MRSA infections: VAP, 0.13 versus 0.11 (P = .84); CLABSI, 0.11 versus 0.19 (P = .45); SSI, 0 versus 0.14 (P = .50); and CAUTI, 0.025 versus 0.033 (P = .84); (2) VRE infections: CAUTI, 0.27 versus 0.13 (P = .19) and CLABSI, 0.29 versus 0.3 (P = .94); and (3) HA-MRSAB rates: 0.14 versus 0.11 (P = .55), respectively. Discontinuation of CPs did not adversely impact endemic MRSA and VRE infection rates. Copyright © 2017 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Elsevier Inc. All rights reserved.

Reconsidering contact precautions for endemic methicillin-resistant Staphylococcus aureus and vancomycin-resistant Enterococcus.

Science.gov (United States)

Morgan, Daniel J; Murthy, Rekha; Munoz-Price, L Silvia; Barnden, Marsha; Camins, Bernard C; Johnston, B Lynn; Rubin, Zachary; Sullivan, Kaede V; Shane, Andi L; Dellinger, E Patchen; Rupp, Mark E; Bearman, Gonzalo

2015-10-01

Whether contact precautions (CP) are required to control the endemic transmission of methicillin-resistant Staphylococcus aureus (MRSA) or vancomycin-resistant Enterococcus (VRE) in acute care hospitals is controversial in light of improvements in hand hygiene, MRSA decolonization, environmental cleaning and disinfection, fomite elimination, and chlorhexidine bathing. To provide a framework for decision making around use of CP for endemic MRSA and VRE based on a summary of evidence related to use of CP, including impact on patients and patient care processes, and current practices in use of CP for MRSA and VRE in US hospitals. A literature review, a survey of Society for Healthcare Epidemiology of America Research Network members on use of CP, and a detailed examination of the experience of a convenience sample of hospitals not using CP for MRSA or VRE. Hospital epidemiologists and infection prevention experts. No high quality data support or reject use of CP for endemic MRSA or VRE. Our survey found more than 90% of responding hospitals currently use CP for MRSA and VRE, but approximately 60% are interested in using CP in a different manner. More than 30 US hospitals do not use CP for control of endemic MRSA or VRE. Higher quality research on the benefits and harms of CP in the control of endemic MRSA and VRE is needed. Until more definitive data are available, the use of CP for endemic MRSA or VRE in acute care hospitals should be guided by local needs and resources.

Reliability growth of thin film resistors contact

Directory of Open Access Journals (Sweden)

Lugin A. N.

2010-10-01

Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

Thermographic Inspection of Fatigue Crack by Using Contact Thermal Resistance

Energy Technology Data Exchange (ETDEWEB)

Yang, Seung Yong; Kim, No Hyu [Korean University of Technology and Education, Cheonan (Korea, Republic of)

2013-04-15

Fatigue crack was detected from a temperature change around surface crack using the thermographic technique. Thermal gradient across the crack decreased very much due to thermal resistance of contact surface in the crack. Heat diffusion flow passing through the discontinuity was visualized in temperature by infrared camera to find and locate the crack. A fatigue crack specimen(SM-45C), which was prepared according to KS specification and notched in its center to initiate fatigue crack from the notch tip, was heated by halogen lamp at the end of one side to generate a heat diffusion flow in lateral direction. A abrupt jump in temperature across the fatigue crack was observed in thermographic image, by which the crack could be located and sized from temperature distribution.

Thermographic Inspection of Fatigue Crack by Using Contact Thermal Resistance

International Nuclear Information System (INIS)

Yang, Seung Yong; Kim, No Hyu

2013-01-01

Fatigue crack was detected from a temperature change around surface crack using the thermographic technique. Thermal gradient across the crack decreased very much due to thermal resistance of contact surface in the crack. Heat diffusion flow passing through the discontinuity was visualized in temperature by infrared camera to find and locate the crack. A fatigue crack specimen(SM-45C), which was prepared according to KS specification and notched in its center to initiate fatigue crack from the notch tip, was heated by halogen lamp at the end of one side to generate a heat diffusion flow in lateral direction. A abrupt jump in temperature across the fatigue crack was observed in thermographic image, by which the crack could be located and sized from temperature distribution.

Structure of a DNA glycosylase that unhooks interstrand cross-links

Energy Technology Data Exchange (ETDEWEB)

Mullins, Elwood A.; Warren, Garrett M.; Bradley, Noah P.; Eichman, Brandt F. (Vanderbilt)

2017-04-10

DNA glycosylases are important editing enzymes that protect genomic stability by excising chemically modified nucleobases that alter normal DNA metabolism. These enzymes have been known only to initiate base excision repair of small adducts by extrusion from the DNA helix. However, recent reports have described both vertebrate and microbial DNA glycosylases capable of unhooking highly toxic interstrand cross-links (ICLs) and bulky minor groove adducts normally recognized by Fanconi anemia and nucleotide excision repair machinery, although the mechanisms of these activities are unknown. Here we report the crystal structure of Streptomyces sahachiroi AlkZ (previously Orf1), a bacterial DNA glycosylase that protects its host by excising ICLs derived from azinomycin B (AZB), a potent antimicrobial and antitumor genotoxin. AlkZ adopts a unique fold in which three tandem winged helix-turn-helix motifs scaffold a positively charged concave surface perfectly shaped for duplex DNA. Through mutational analysis, we identified two glutamine residues and a β-hairpin within this putative DNA-binding cleft that are essential for catalytic activity. Additionally, we present a molecular docking model for how this active site can unhook either or both sides of an AZB ICL, providing a basis for understanding the mechanisms of base excision repair of ICLs. Given the prevalence of this protein fold in pathogenic bacteria, this work also lays the foundation for an emerging role of DNA repair in bacteria-host pathogenesis.

Is Chemoprophylaxis for Child Contacts of Drug-Resistant TB Patients Beneficial? A Systematic Review

Directory of Open Access Journals (Sweden)

C. Padmapriyadarsini

2018-01-01

Full Text Available Background. Preventive therapy for child contacts of multidrug-resistant tuberculosis (MDR-TB patients is poorly studied, and no consensus about the role and the rationale of chemoprophylaxis has been reached. Objective. To conduct systematic review with an aim to determine the effectiveness of TB preventive therapy in reducing the incidence of TB disease in pediatric contacts of MDR-TB patients. Methods. We conducted a literature search for randomized control trials, cohort studies, and case reports of chemoprophylaxis for pediatric contacts of MDR-TB patients in PubMed, EMBASE, Cochrane Databases of Systematic Reviews, metaRegister of Controlled Trials, and other clinical registries through March 2017, using appropriate search strategy. In addition we searched abstracts from international conferences and references of published articles and reviews. Results. Of the 153 references assessed from various databases, seven studies were identified as relevant after adaption of eligibility criteria and assessed for systematic review. Of these, only two studies contributed data for the pooled meta-analysis. Conclusions. Though the available evidences suggest that the chemoprophylaxis for child contacts of MDR-TB patients is beneficial, data to support or reject preventive therapy is very limited. Further clinical research, in Tb endemic settings like India, needs to be performed to prove the beneficial effect of chemoprophylaxis for pediatric contacts of MDR-TB.

Cisplatin sensitivity of testis tumour cells is due to deficiency in interstrand-crosslink repair and low ERCC1-XPF expression

Directory of Open Access Journals (Sweden)

Kaina Bernd

2010-09-01

Full Text Available Abstract Background Cisplatin based chemotherapy cures over 80% of metastatic testicular germ cell tumours (TGCT. In contrast, almost all other solid cancers in adults are incurable once they have spread beyond the primary site. Cell lines derived from TGCTs are hypersensitive to cisplatin reflecting the clinical response. Earlier findings suggested that a reduced repair capacity might contribute to the cisplatin hypersensitivity of testis tumour cells (TTC, but the critical DNA damage has not been defined. This study was aimed at investigating the formation and repair of intrastrand and interstrand crosslinks (ICLs induced by cisplatin in TTC and their contribution to TTC hypersensitivity. Results We observed that repair of intrastrand crosslinks is similar in cisplatin sensitive TTC and resistant bladder cancer cells, whereas repair of ICLs was significantly reduced in TTC. γH2AX formation, which serves as a marker of DNA breaks formed in response to ICLs, persisted in cisplatin-treated TTC and correlated with sustained phosphorylation of Chk2 and enhanced PARP-1 cleavage. Expression of the nucleotide excision repair factor ERCC1-XPF, which is implicated in the processing of ICLs, is reduced in TTC. To analyse the causal role of ERCC1-XPF for ICL repair and cisplatin sensitivity, we over-expressed ERCC1-XPF in TTC by transient transfection. Over-expression increased ICL repair and rendered TTC more resistant to cisplatin, which suggests that ERCC1-XPF is rate-limiting for repair of ICLs resulting in the observed cisplatin hypersensitivity of TTC. Conclusion Our data indicate for the first time that the exceptional sensitivity of TTC and, therefore, very likely the curability of TGCT rests on their limited ICL repair due to low level of expression of ERCC1-XPF.

The Variations of Thermal Contact Resistance and Heat Transfer Rate of the AlN Film Compositing with PCM

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2015-01-01

Full Text Available The electrical industries have been fast developing over the past decades. Moreover, the trend of microelements and packed division multiplex is obviously for the electrical industry. Hence, the high heat dissipative and the electrical insulating device have been popular and necessary. The thermal conduct coefficient of aluminum nitride (i.e., AlN is many times larger than the other materials. Moreover, the green technology of composite with phase change materials (i.e., PCMs is worked as a constant temperature cooler. Therefore, PCMs have been used frequently for saving energy and the green environment. Based on the above statements, it does show great potential in heat dissipative for the AlN film compositing with PCM. Therefore, this paper is focused on the research of thermal contact resistance and heat transfer between the AlN/PCM pairs. According to the experimental results, the heat transfer decreases and the thermal contact resistance increases under the melting process of PCM. However, the suitable parameters such as contact pressures can be used to improve the above defects.

Fabrication of robot head module using contact resistance force sensor for human robot interaction and its evaluation

Energy Technology Data Exchange (ETDEWEB)

Kim, Dong Ki; Kim, Jong Ho [Korea Reserch Institute of Standards and Science, Daejeon (Korea, Republic of); Kwon, Hyun Joon [Univ. of Maryland, Maryland (United States); Kwon, Young Ha [Kyung Hee Univ., Gyunggi Do (Korea, Republic of)

2012-10-15

This paper presents a design of a robot head module with touch sensing algorithms that can simultaneously detect contact force and location. The module is constructed with a hemisphere and three sensor units that are fabricated using contact resistance force sensors. The surface part is designed with the hemisphere that measures 300 mm in diameter and 150 mm in height. Placed at the bottom of the robot head module are three sensor units fabricated using a simple screen printing technique. The contact force and the location of the model are evaluated through the calibration setup. The experiment showed that the calculated contact positions almost coincided with the applied load points as the contact location changed with a location error of about {+-}8.67 mm. The force responses of the module were evaluated at two points under loading and unloading conditions from 0 N to 5 N. The robot head module showed almost the same force responses at the two points.

Contact Resistance of Tantalum Coatings in Fuel Cells and Electrolyzers using Acidic Electrolytes at Elevated Temperatures

DEFF Research Database (Denmark)

Jensen, Annemette Hindhede; Christensen, Erik; Barner, Jens H. Von

2014-01-01

stainless steel were found to be far below the US Department of Energy target value of 10mcm2. The good contact resistance of tantalum was demonstrated by simulating high temperature polymer electrolyte membrane electrolysis conditions by anodization performed in 85% phosphoric acid at 130◦C, followed...

Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

Science.gov (United States)

Roldán, J. B.; Miranda, E.; González-Cordero, G.; García-Fernández, P.; Romero-Zaliz, R.; González-Rodelas, P.; Aguilera, A. M.; González, M. B.; Jiménez-Molinos, F.

2018-01-01

A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime.

RPA activates the XPF‐ERCC1 endonuclease to initiate processing of DNA interstrand crosslinks

KAUST Repository

Abdullah, Ummi B

2017-06-13

During replication‐coupled DNA interstrand crosslink (ICL) repair, the XPF‐ERCC1 endonuclease is required for the incisions that release, or “unhook”, ICLs, but the mechanism of ICL unhooking remains largely unknown. Incisions are triggered when the nascent leading strand of a replication fork strikes the ICL. Here, we report that while purified XPF‐ERCC1 incises simple ICL‐containing model replication fork structures, the presence of a nascent leading strand, modelling the effects of replication arrest, inhibits this activity. Strikingly, the addition of the single‐stranded DNA (ssDNA)‐binding replication protein A (RPA) selectively restores XPF‐ERCC1 endonuclease activity on this structure. The 5′–3′ exonuclease SNM1A can load from the XPF‐ERCC1‐RPA‐induced incisions and digest past the crosslink to quantitatively complete the unhooking reaction. We postulate that these collaborative activities of XPF‐ERCC1, RPA and SNM1A might explain how ICL unhooking is achieved in vivo.

RPA activates the XPF‐ERCC1 endonuclease to initiate processing of DNA interstrand crosslinks

KAUST Repository

Abdullah, Ummi B; McGouran, Joanna F; Brolih, Sanja; Ptchelkine, Denis; El‐Sagheer, Afaf H; Brown, Tom; McHugh, Peter J

2017-01-01

During replication‐coupled DNA interstrand crosslink (ICL) repair, the XPF‐ERCC1 endonuclease is required for the incisions that release, or “unhook”, ICLs, but the mechanism of ICL unhooking remains largely unknown. Incisions are triggered when the nascent leading strand of a replication fork strikes the ICL. Here, we report that while purified XPF‐ERCC1 incises simple ICL‐containing model replication fork structures, the presence of a nascent leading strand, modelling the effects of replication arrest, inhibits this activity. Strikingly, the addition of the single‐stranded DNA (ssDNA)‐binding replication protein A (RPA) selectively restores XPF‐ERCC1 endonuclease activity on this structure. The 5′–3′ exonuclease SNM1A can load from the XPF‐ERCC1‐RPA‐induced incisions and digest past the crosslink to quantitatively complete the unhooking reaction. We postulate that these collaborative activities of XPF‐ERCC1, RPA and SNM1A might explain how ICL unhooking is achieved in vivo.

Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method

Science.gov (United States)

Lee, Byeong Hyeon; Han, Sangmin; Lee, Sang Yeol

2018-01-01

Amorphous silicon-zinc-tin-oxide (a-SZTO) thin film transistors (TFTs) have been fabricated depending on the silicon ratio in channel layers. The a-SZTO TFT exhibited high electrical properties, such as high mobility of 23 cm2 V-1 s-1, subthreshold swing of 0.74 V/decade and ION/OFF of 2.8 × 108, despite of the addition of Si suppressor. The physical mechanism on the change of the sheet resistance and the contact resistance in a-SZTO TFT has been investigated and proposed closely related with the Si ratio. Both resistances were increased as increasing Si ratio, which clearly indicated that the role of Si is a carrier suppressor directly leading to the increase of channel and contact resistances. To explain the role of Si as a carrier suppressor, the conduction band offset mechanism has been also proposed depending on the change of carrier concentration in channel layer and at the interface between electrode and channel layer. 2007.01-2011.12 Senior Researcher at korea institute of science and technology (KOREA). 2008.01-2011.12 Professor at University of Science and Technology (KOREA). 1995.01-2007.12 Professor at Yonsei University (KOREA). 2002.01-2003.12 Inviting Researcher at Los Alamos National Lab (USA). 1993.01-1995.12 Senior Researcher at Electronics and Telecommunications Research Institute (KOREA). 1992.01-1993.01 Research Associate at State University of New York at Buffalo (USA).

FANCD2 Binds CtIP and Regulates DNA-End Resection during DNA Interstrand Crosslink Repair

Directory of Open Access Journals (Sweden)

Junya Unno

2014-05-01

Full Text Available The Fanconi anemia (FA pathway is critically involved in the maintenance of hematopoietic stem cells and the suppression of carcinogenesis. A key FA protein, FANCD2, is monoubiquitinated and accumulates in chromatin in response to DNA interstrand crosslinks (ICLs, where it coordinates DNA repair through mechanisms that are still poorly understood. Here, we report that CtIP protein directly interacts with FANCD2. A region spanning amino acids 166 to 273 of CtIP and monoubiquitination of FANCD2 are both essential for the FANCD2-CtIP interaction and mitomycin C (MMC-induced CtIP foci. Remarkably, both FANCD2 and CtIP are critical for MMC-induced RPA2 hyperphosphorylation, an event that accompanies end resection of double-strand breaks. Collectively, our results reveal a role of monoubiquitinated FANCD2 in end resection that depends on its binding to CtIP during ICL repair.

Ti/Al Ohmic Contacts to n-Type GaN Nanowires

Directory of Open Access Journals (Sweden)

Gangfeng Ye

2011-01-01

Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

AC losses and stability on large cable-in-conduit superconductors

Science.gov (United States)

Bruzzone, Pierluigi

1998-12-01

The cable-in-conduit superconductors are preferred for applications where the AC losses and stability are a major concern, e.g., fusion magnets and SMES. A review of coupling currents loss results for both NbTi and Nb 3Sn cable-in-conduit conductors (CICC) is presented and the AC loss relevant features are listed, with special emphasis for the role of the interstrand resistance and strand coating. The transient stability approach for CICCs is discussed and the analytical models are quoted as well as the relevant experimental database. The likely spectrum of transient disturbance in CICC is reviewed and the need to account for interstrand current sharing in the design is outlined. Eventually a practical criterion for the interstrand resistance is proposed to link the stability and AC loss design.

Toward High Carrier Mobility and Low Contact Resistance:Laser Cleaning of PMMA Residues on Graphene Surfaces

Institute of Scientific and Technical Information of China (English)

Yuehui Jia; Xin Gong; Pei Peng; Zidong Wang; Zhongzheng Tian; Liming Ren; Yunyi Fu; Han Zhang

2016-01-01

Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device fabrication.However,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device performance.How to eliminate contamination and restore clean surfaces of graphene is still highly demanded.In this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser exposure.Under proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying graphene.Furthermore,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be realized.This work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.

Contact resistance measurement structures for high frequencies

NARCIS (Netherlands)

Roy, Deepu; Pijper, Ralf M.T.; Tiemeijer, Luuk F.; Wolters, Robertus A.M.

2011-01-01

Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto

Finite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensor

KAUST Repository

Sun, Jian; Kosel, Jü rgen

2011-01-01

.89 × 104% and 0.02%/(10-4 T), respectively, at 1 Tesla. For values of contact resistivity up to 10-8cm2 the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does

Experimental Characterization and Modeling of Thermal Contact Resistance of Electric Machine Stator-to-Cooling Jacket Interface Under Interference Fit Loading

Energy Technology Data Exchange (ETDEWEB)

Cousineau, Justine E [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bennion, Kevin S [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Chieduko, Victor [UQM Technologies, Inc.; Lall, Rajiv [UQM Technologies, Inc.; Gilbert, Alan [UQM Technologies, Inc.

2018-05-08

Cooling of electric machines is a key to increasing power density and improving reliability. This paper focuses on the design of a machine using a cooling jacket wrapped around the stator. The thermal contact resistance (TCR) between the electric machine stator and cooling jacket is a significant factor in overall performance and is not well characterized. This interface is typically an interference fit subject to compressive pressure exceeding 5 MPa. An experimental investigation of this interface was carried out using a thermal transmittance setup using pressures between 5 and 10 MPa. The results were compared to currently available models for contact resistance, and one model was adapted for prediction of TCR in future motor designs.

Degradation pattern of black phosphorus multilayer field-effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

Science.gov (United States)

Lee, Byung Chul; Kim, Chul Min; Jang, Ho-Kyun; Lee, Jae Woo; Joo, Min-Kyu; Kim, Gyu-Tae

2017-10-01

Black phosphorus (BP) has been proposed as a future optoelectronic material owing to its direct bandgap with excellent electrical performances. However, oxygen (O2) and water (H2O) molecules in an ambient condition can create undesired bubbles on the surface of the BP, resulting in hampering its excellent intrinsic properties. Here, we report the electrical degradation pattern of a mechanically exfoliated BP field-effect transistor (FET) in terms of the channel and contact, separately. Various electrical parameters such as the threshold voltage (VTH), carrier mobility (μ), contact resistance (RCT) and channel resistance (RCH) are estimated by the Y function method (YFM) with respect to time (up to 2000 min). It is found that RCT reduces and then, increases with time; whereas, the behavior of RCH is vice versa in ambient conditions. We attribute these effects to oxygen doping at the contact and the surface oxidation effects on the surface of the BP, respectively.

Contact transmission of influenza virus between ferrets imposes a looser bottleneck than respiratory droplet transmission allowing propagation of antiviral resistance

Science.gov (United States)

Frise, Rebecca; Bradley, Konrad; van Doremalen, Neeltje; Galiano, Monica; Elderfield, Ruth A.; Stilwell, Peter; Ashcroft, Jonathan W.; Fernandez-Alonso, Mirian; Miah, Shahjahan; Lackenby, Angie; Roberts, Kim L.; Donnelly, Christl A.; Barclay, Wendy S.

2016-01-01

Influenza viruses cause annual seasonal epidemics and occasional pandemics. It is important to elucidate the stringency of bottlenecks during transmission to shed light on mechanisms that underlie the evolution and propagation of antigenic drift, host range switching or drug resistance. The virus spreads between people by different routes, including through the air in droplets and aerosols, and by direct contact. By housing ferrets under different conditions, it is possible to mimic various routes of transmission. Here, we inoculated donor animals with a mixture of two viruses whose genomes differed by one or two reverse engineered synonymous mutations, and measured the transmission of the mixture to exposed sentinel animals. Transmission through the air imposed a tight bottleneck since most recipient animals became infected by only one virus. In contrast, a direct contact transmission chain propagated a mixture of viruses suggesting the dose transferred by this route was higher. From animals with a mixed infection of viruses that were resistant and sensitive to the antiviral drug oseltamivir, resistance was propagated through contact transmission but not by air. These data imply that transmission events with a looser bottleneck can propagate minority variants and may be an important route for influenza evolution. PMID:27430528

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

2016-12-01

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

Science.gov (United States)

Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

2018-03-01

Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.

Flexible textile-based strain sensor induced by contacts

International Nuclear Information System (INIS)

Zhang, Hui

2015-01-01

In this paper, the contact effects are used as the key sensing element to develop flexible textile-structured strain sensors. The structures of the contact are analyzed theoretically and the contact resistances are investigated experimentally. The electromechanical properties of the textiles are investigated to find the key factors which determine the sensitivity, repeatability, and linearity of the sensor. The sensing mechanism is based on the change of contact resistance induced by the change of the configuration of the textiles. In order to improve the performance of the textile strain sensor, the contact resistance is designed based on the electromechanical properties of the fabric. It can be seen from the results that the performance of the sensor is largely affected by the structure of the contacts, which are determined by the morphology of fiber surface and the structures of the yarn and fabric. (paper)

Effect of thermal contact resistances on fast charging of large format lithium ion batteries

International Nuclear Information System (INIS)

Ye, Yonghuang; Saw, Lip Huat; Shi, Yixiang; Somasundaram, Karthik; Tay, Andrew A.O.

2014-01-01

Highlights: • The effect of thermal contact resistance on thermal performance of large format lithium ion batteries. • The effect of temperature gradient on electrochemical performance of large format batteries during fast charging. • The thermal performance of lithium ion battery utilizing pulse charging protocol. • Suggestions on battery geometry design optimization to improve thermal performance. - Abstract: A two dimensional electrochemical thermal model is developed on the cross-plane of a laminate stack plate pouch lithium ion battery to study the thermal performance of large format batteries. The effect of thermal contact resistance is taken into consideration, and is found to greatly increase the maximum temperature and temperature gradient of the battery. The resulting large temperature gradient would induce in-cell non-uniformity of charging-discharging current and state of health. Simply increasing the cooling intensity is inadequate to reduce the maximum temperature and narrow down the temperature difference due to the poor cross-plane thermal conductivity. Pulse charging protocol does not help to mitigate the temperature difference on the bias of same total charging time, because of larger time-averaged heat generation rate than constant current charging. Suggestions on battery geometry optimizations for both prismatic/pouch battery and cylindrical battery are proposed to reduce the maximum temperature and mitigate the temperature gradient within the lithium ion battery

Residual Resistivity Ratio (RRR) Measurements of LHC Superconducting NbTi Cable Strands

CERN Document Server

Charifoulline, Z

2006-01-01

The Rutherford-type superconducting NbTi cables of the LHC accelerator are currently manufactured by six industrial companies. As a part of the acceptance tests, the Residual Resistivity Ratio (RRR) of superconducting strands is systematically measured on virgin strands to qualify the strands before cabling and on extracted strands to qualify the cables and to check the final heat treatment (controlled oxidation to control interstrand resistance). More than 12000 samples of virgin and extracted strands have been measured during last five years. Results show good correlation with the measurements done by the companies and reflect well the technological process of cable production (strand annealing, cabling, cable heat treatment). This paper presents a description of the RRR-test station and the measurement procedure, the summary of the results over all suppliers and finally the correlation between RRR-values of the cables and the magnets.

RPA activates the XPF-ERCC1 endonuclease to initiate processing of DNA interstrand crosslinks.

Science.gov (United States)

Abdullah, Ummi B; McGouran, Joanna F; Brolih, Sanja; Ptchelkine, Denis; El-Sagheer, Afaf H; Brown, Tom; McHugh, Peter J

2017-07-14

During replication-coupled DNA interstrand crosslink (ICL) repair, the XPF-ERCC1 endonuclease is required for the incisions that release, or "unhook", ICLs, but the mechanism of ICL unhooking remains largely unknown. Incisions are triggered when the nascent leading strand of a replication fork strikes the ICL Here, we report that while purified XPF-ERCC1 incises simple ICL-containing model replication fork structures, the presence of a nascent leading strand, modelling the effects of replication arrest, inhibits this activity. Strikingly, the addition of the single-stranded DNA (ssDNA)-binding replication protein A (RPA) selectively restores XPF-ERCC1 endonuclease activity on this structure. The 5'-3' exonuclease SNM1A can load from the XPF-ERCC1-RPA-induced incisions and digest past the crosslink to quantitatively complete the unhooking reaction. We postulate that these collaborative activities of XPF-ERCC1, RPA and SNM1A might explain how ICL unhooking is achieved in vivo . © 2017 The Authors. Published under the terms of the CC BY 4.0 license.

Knockdown of αII spectrin in normal human cells by siRNA leads to chromosomal instability and decreased DNA interstrand cross-link repair

OpenAIRE

McMahon, Laura W.; Zhang, Pan; Sridharan, Deepa M.; Lefferts, Joel A.; Lambert, Muriel W.

2009-01-01

Nonerythroid α-spectrin (αIISp) is a structural protein involved in repair of DNA interstrand cross-links and is deficient in cells from patients with Fanconi anemia (FA), which are defective in ability to repair cross-links. In order to further demonstrate the importance of the role that αIISp plays in normal human cells and in the repair defect in FA, αIISp was knocked down in normal cells using siRNA. Depletion of αIISp in normal cells by siRNA resulted in chromosomal instability and cellu...

Investigation of electrochemical intrusion of cations by the method of contact electric resistance

International Nuclear Information System (INIS)

Marichev, V.A.

1997-01-01

Paper shows the possibility and prospects of application of contact electric resistance technique (CER) to study in-situ the initial stages of electrochemical admission of cations (ECA). ECA is shown to increase CER of metals. It enables to determine ECA potential and to investigate kinetics of this process. Using ECA in copper, silver and zinc from alkali solutions as an example one has shown that CER technique enables to obtain results that do not contradict well-known published data. Potentials of ECA cations from acid and neutral solutions in copper, platinum, iron, titanium and tungsten are determined

Whole-genome comparison of meticillin-resistant Staphylococcus aureus CC22 SCCmecIV from people and their in-contact pets.

Science.gov (United States)

Loeffler, Anette; McCarthy, Alex; Lloyd, David H; Musilová, Eva; Pfeiffer, Dirk U; Lindsay, Jodi A

2013-10-01

Meticillin-resistant Staphylococcus aureus (MRSA) infections remain important medical and veterinary challenges. The MRSA isolated from dogs and cats typically belong to dominant hospital-associated clones, in the UK mostly EMRSA-15 (CC22 SCCmecIV), suggesting original human-to-animal transmission. Nevertheless, little is known about host-specific genetic variation within the same S. aureus lineage. To identify host-specific variation amongst MRSA CC22 SCCmecIV by comparing isolates from pets with those from in-contact humans using whole-genome microarray. Six pairs of MRSA CC22 SCCmecIV from human carriers (owners and veterinary staff) and their respective infected in-contact pets were compared using a 62-strain whole-genome S. aureus microarray (SAM-62). The presence of putative host-specific genes was subsequently determined in a larger number of human (n = 47) and pet isolates (n = 93) by PCR screening. Variation in mobile genetic elements (MGEs) occurred frequently and appeared largely independent of host and in-contact pair. A plasmid (SAP078A) encoding heavy-metal resistance genes (arsR, arsA, cadA, cadC, mco and copB) was found in three of six human and none of six animal isolates. However, only two of four resistance genes were associated with human hosts (P = 0.015 for arsA and cadA). The variation found amongst MGEs highlights that genetic adaptation in MRSA continues. However, host-specific MGEs were not detected, which supports the hypothesis that pets may not be natural hosts of MRSA CC22 and emphasizes that rigorous hygiene measures are critical to prevent contamination and infection of dogs and cats. The host specificity of individual heavy-metal resistance genes warrants further investigation into different selection pressures in humans and animals. © 2013 ESVD and ACVD.

Nasal carriage of methicillin-resistant coagulase-negative staphylococci in healthy humans is associated with occupational pig contact in a dose-response manner.

Science.gov (United States)

Li, Ling; Chen, Zhiyao; Guo, Dan; Li, Shunming; Huang, Jingya; Wang, Xiaolin; Yao, Zhenjiang; Chen, Sidong; Ye, Xiaohua

2017-09-01

This study aimed to explore the association between occupational pig contact and human methicillin-resistant coagulase-negative staphylococci (MRCoNS) carriage. We conducted a cross-sectional study of pig exposed participants and controls in Guangdong, China, using a multi-stage sampling design. Participants provided a nasal swab for MRCoNS analysis and resulting isolates were tested for antibiotic susceptibility. The dose-response relation was examined using log binomial regression or Poisson regression models. The adjusted prevalence of MRCoNS carriage in pig exposed participants was 1.67 times (95% CI: 1.32-2.11) higher than in controls. The adjusted average number of resistance to different antibiotic classes of MRCoNS isolates from pig exposed participants was 1.67 times (95% CI: 1.46-1.91) higher than those from controls. Notably, we found the frequency and duration of occupational pig contact was associated with increased prevalence and increased number of resistance to different antibiotic classes of MRCoNS in a dose-response manner. When examining these relations by MRCoNS species, there was still evidence of similar exposure-response relations. Additionally, the proportion of tetracycline-resistant and tet(M)-containing MRCoNS isolates was significantly higher in pig exposed participants than in controls. These findings suggested a potential transmission of MRCoNS from livestock to humans by occupational livestock contact, and the presence of phenotypic and genotypic tetracycline resistance may aid in the differentiation of animal origins of MRCoNS isolates. Copyright © 2017 Elsevier B.V. All rights reserved.

Ouabain, a cardiac glycoside, inhibits the Fanconi anemia/BRCA pathway activated by DNA interstrand cross-linking agents.

Directory of Open Access Journals (Sweden)

Dong Wha Jun

Full Text Available Modulation of the DNA repair pathway is an emerging target for the development of anticancer drugs. DNA interstrand cross-links (ICLs, one of the most severe forms of DNA damage caused by anticancer drugs such as cisplatin and mitomycin C (MMC, activates the Fanconi anemia (FA/BRCA DNA repair pathway. Inhibition of the FA/BRCA pathway can enhance the cytotoxic effects of ICL-inducing anticancer drugs and can reduce anticancer drug resistance. To find FA/BRCA pathway inhibitory small molecules, we established a cell-based high-content screening method for quantitating the activation of the FA/BRCA pathway by measuring FANCD2 foci on DNA lesions and then applied our method to chemical screening. Using commercial LOPAC1280 chemical library screening, ouabain was identified as a competent FA/BRCA pathway inhibitory compound. Ouabain, a member of the cardiac glycoside family, binds to and inhibits Na(+/K(+-ATPase and has been used to treat heart disease for many years. We observed that ouabain, as well as other cardiac glycoside family members--digitoxin and digoxin--down-regulated FANCD2 and FANCI mRNA levels, reduced monoubiquitination of FANCD2, inhibited FANCD2 foci formation on DNA lesions, and abrogated cell cycle arrest induced by MMC treatment. These inhibitory activities of ouabain required p38 MAPK and were independent of cellular Ca(2+ ion increase or the drug uptake-inhibition effect of ouabain. Furthermore, we found that ouabain potentiated the cytotoxic effects of MMC in tumor cells. Taken together, we identified an additional effect of ouabain as a FA/BRCA pathway-inhibiting chemosensitization compound. The results of this study suggest that ouabain may serve as a chemosensitizer to ICL-inducing anticancer drugs.

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

International Nuclear Information System (INIS)

Ramón, Michael E.; Movva, Hema C. P.; Fahad Chowdhury, Sk.; Parrish, Kristen N.; Rai, Amritesh; Akinwande, Deji; Banerjee, Sanjay K.; Magnuson, Carl W.; Ruoff, Rodney S.

2014-01-01

High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R C ) and access resistance (R A ). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f T ) after doping, as compared to ∼23% f T improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R C on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R A for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates

Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As

Energy Technology Data Exchange (ETDEWEB)

Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck; Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Rinus T. P. [SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)

2014-10-28

Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D} = 3 × 10{sup 19 }cm{sup −3}) with a specific contact resistance (ρ{sub c}) of 4.0 × 10{sup −8 }± 7 × 10{sup −9} Ω·cm{sup 2} and 4.6 × 10{sup −8 }± 9 × 10{sup −9} Ω·cm{sup 2}, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρ{sub c} is further reduced to 2.1 × 10{sup −8 }± 2 × 10{sup −9} Ω·cm{sup 2} and 1.8 × 10{sup −8 }± 1 × 10{sup −9} Ω·cm{sup 2} on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.

The effect of boron implantation on the corrosion behaviour, microhardness and contact resistance of copper and silver surfaces

International Nuclear Information System (INIS)

Henriksen, O.; Johnson, E.; Johansen, A.; Sarholt-Kristensen, L.

1986-01-01

In order to investigate the influence of boron implantation on the corrosion resistance of electrical contacts, a number of pure copper, pure silver and copper edge connector samples have been implanted with boron (40 keV) to fluences of 5.10 20 m -2 and 2.10 21 m -2 . Atmospheric corrosion tests of the implanted species were conducted using the following exposures: H 2 S (12.5 ppm, 4 days), SO 2 (25 ppm, 21 days), saltfog (5% NaCl, 1 day), moist air (93% RH, 56 days), and hot/dry air (70 C, 56 days). The boron implantations lead to a significant reduction in the sulphidation rate of copper and silver. The corrosive film formed during exposure in H 2 S and SO 2 atmospheres is confined to pitted regions on the implanted areas, while a thick and relatively uniform film formation is observed on the unimplanted samples. The corrosion resistance of copper and silver in saltfog atmosphere is somewhat improved by boron implantation, whilst the results from exposures to moist air or hot/dry air are inconclusive. The improved corrosion behaviour is accompanied by an increase in the contact resistance and in the microhardness of the implanted samples. (orig.)

Equilibrium contact angle or the most-stable contact angle?

Science.gov (United States)

Montes Ruiz-Cabello, F J; Rodríguez-Valverde, M A; Cabrerizo-Vílchez, M A

2014-04-01

It is well-established that the equilibrium contact angle in a thermodynamic framework is an "unattainable" contact angle. Instead, the most-stable contact angle obtained from mechanical stimuli of the system is indeed experimentally accessible. Monitoring the susceptibility of a sessile drop to a mechanical stimulus enables to identify the most stable drop configuration within the practical range of contact angle hysteresis. Two different stimuli may be used with sessile drops: mechanical vibration and tilting. The most stable drop against vibration should reveal the changeless contact angle but against the gravity force, it should reveal the highest resistance to slide down. After the corresponding mechanical stimulus, once the excited drop configuration is examined, the focus will be on the contact angle of the initial drop configuration. This methodology needs to map significantly the static drop configurations with different stable contact angles. The most-stable contact angle, together with the advancing and receding contact angles, completes the description of physically realizable configurations of a solid-liquid system. Since the most-stable contact angle is energetically significant, it may be used in the Wenzel, Cassie or Cassie-Baxter equations accordingly or for the surface energy evaluation. © 2013 Elsevier B.V. All rights reserved.

NMOS contact resistance reduction with selenium implant into NiPt silicide

Science.gov (United States)

Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

2012-11-01

A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

Energy Technology Data Exchange (ETDEWEB)

Ramón, Michael E., E-mail: michael.ramon@utexas.edu, E-mail: hemacp@utexas.edu; Movva, Hema C. P., E-mail: michael.ramon@utexas.edu, E-mail: hemacp@utexas.edu; Fahad Chowdhury, Sk.; Parrish, Kristen N.; Rai, Amritesh; Akinwande, Deji; Banerjee, Sanjay K. [Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758 (United States); Magnuson, Carl W.; Ruoff, Rodney S. [Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712 (United States)

2014-02-17

High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R{sub C}) and access resistance (R{sub A}). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f{sub T}) after doping, as compared to ∼23% f{sub T} improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R{sub C} on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R{sub A} for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates.

Transport physics and device modeling of zinc oxide thin-film transistors. Pt. II: Contact Resistance in Short Channel Devices

NARCIS (Netherlands)

Torricelli, F.; Meijboom, J.R.; Smits, E.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Leeuw, D. de; Cantatore, E.

2011-01-01

Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for

Transport physics and device modeling of zinc oxide thin film transistors - part II : contact resistance in short channel devices

NARCIS (Netherlands)

Torricelli, F.; Smits, E.C.P.; Meijboom, J.R.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Cantatore, E.

2011-01-01

Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the

Geophysical Characterization of the Quaternary-Cretaceous Contact Using Surface Resistivity Methods in Franklin and Webster Counties, South-Central Nebraska

Science.gov (United States)

Teeple, Andrew; Kress, Wade H.; Cannia, James C.; Ball, Lyndsay B.

2009-01-01

Formation made accurate interpretation of the resistivity profile sections difficult and less confident because of similar resistivity of this formation and that of the coarser-grained sediment of the Quaternary-age deposits. However, distinct conductive features were identified within the resistivity profile sections that aided in delineating the contact between the resistive Quaternary-age deposits and the resistive Niobrara Formation. Using this information, an interpretive boundary was drawn on the resistivity profile sections to represent the contact between the Quaternary-age alluvial deposits and the Cretaceous-age Niobrara Formation. A digital elevation model (DEM) of the top of the Niobrara Formation was constructed using the altitudes from the interpreted contact lines. This DEM showed that the general trend of top of the Niobrara Formation dips to the southeast. At the north edge of the study site, the Niobrara Formation topographic high trends east-west with an altitude range of 559 meters in the west to 543 meters in the east. Based on the land-surface elevation and the Niobrara Formation DEM, the estimated thickness of the Quaternary-age alluvial deposits throughout the study area was mapped and showed a thinning of the Quaternary-age alluvial deposits to the north, approximately where the topographic high of the Niobrara Formation is located. This topographic high in the Niobrara Formation has the potential to act as a barrier to ground-water flow from the uplands alluvial aquifer to the Republican River alluvial aquifer as shown in the resistivity profile sections. The Quaternary-age alluvial deposits in the uplands and those in the Republican River Valley are not fully represented as disconnected because it is possible that there are ground-water flow paths that were not mapped during this study.

Measurement of Dynamic Resistance in Resistance Spot Welding

DEFF Research Database (Denmark)

Wu, Pei; Zhang, Wenqi; Bay, Niels

Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side of the transfo......Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side...... of the transformer in resistance welding machines, implying defects from induction noise and interference with the leads connected to the electrodes for measuring the voltage. In this study, the dynamic resistance is determined by measuring the voltage on the primary side and the current on the secondary side...

A new contact electric resistance technique for in-situ measurement of the electric resistance of surface films on metals in electrolytes at high temperatures and pressures

International Nuclear Information System (INIS)

Saario, T.; Marichev, V.A.

1993-01-01

Surface films play a major role in corrosion assisted cracking. A new Contact Electric Resistance (CER) method has been recently developed for in situ measurement of the electric resistance of surface films. The method has been upgraded for high temperature high pressure application. The technique can be used for any electrically conductive material in any environment including liquid, gas or vacuum. The technique has been used to determine in situ the electric resistance of films on metals during adsorption of water and anions, formation and destruction of oxides and hydrides, electroplating of metals and to study the electric resistance of films on semiconductors. The resolution of the CER technique is 10 -9 Ω, which corresponds to about 0.03 monolayers of deposited copper during electrochemical deposition Cu/Cu 2+ . Electric resistance data can be measured with a frequency of the order of one hertz, which enables one to follow in situ the kinetics of surface film related processes. The kinetics of these processes and their dependence on the environment, temperature, pH and electrochemical potential can be investigated

Effect of surface treatment on the interfacial contact resistance and corrosion resistance of Fe–Ni–Cr alloy as a bipolar plate for polymer electrolyte membrane fuel cells

International Nuclear Information System (INIS)

Yang, Meijun; Zhang, Dongming

2014-01-01

The bipolar plate is an important component of the PEMFC (polymer electrolyte membrane fuel cell) because it supplies the pathway of electron flow between each unit cell. Fe–Ni–Cr alloy is considered as a good candidate material for bipolar plate, but it is limited to use as a bipolar plate due to its high ICR (interfacial contact resistance) and corrosion problem. In order to explore a cost-effective method on surface modification, various chemical and electrochemical treatments are performed on Fe–Ni–Cr alloy to acquire the effect of the surface modification on the ICR and corrosion behavior. The ICR and corrosion resistance of Fe–Ni–Cr alloy can be effectively controlled by the chemical treatment of immersion in the mixed acid solution with 10 vol% HNO 3 , 2 vol% HCl and 1 vol% HF for 10 min at 65 °C and then was placed in 30 vol% HNO 3 solution for 5 min. The chemical treatment is more effective on reducing ICR and improving corrosion resistance than that of electrochemical methods (be carried out in the 2 mol/L H 2 SO 4 solution with the electrical potential from −0.4 V to 0.6 V) for Fe–Ni–Cr alloy as a bipolar plate for polymer electrolyte membrane fuel cells. - Highlights: • The procedure of the surface treatments on Fe–Ni–Cr alloy as bipolar plate was described in detail. • Effects of various surface treatments on the interfacial contact resistivity and corrosion behavior were discussed. • The mechanism of the surface modification was particularly analyzed

Current simulation of symmetric contacts on CdTe

International Nuclear Information System (INIS)

Ruzin, A.

2011-01-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Current simulation of symmetric contacts on CdTe

Energy Technology Data Exchange (ETDEWEB)

Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

2011-12-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

The ramp rate dependence of the sextupole field in superconducting dipoles

International Nuclear Information System (INIS)

Ghosh, A.K.; Robins, K.E.; Sampson, W.B.

1993-01-01

Sextupole components are induced in the magnetic field of superconducting dipoles when the current is changed. The magnitude of this effect depends on the rate of change of field, the strand-to-strand resistance in the superconducting cable, and the twist pitch of the wire. Ramp rate measurements have been made on a number of SSC dipoles wound from conductors with different interstrand resistances. The technique employed uses an array of Hall probes sensitive to the sextupole field and can measure the difference for field increasing or decreasing as a function of axial position. Magnets with very low interstrand resistance exhibit a large axial oscillation in the sextupole field between up and down ramps which is rate dependent When the strand resistance is high the amplitude of this oscillation is almost independent of ramp rate

Moving towards high-power, high-frequency and low-resistance CNT supercapacitors by tuning the CNT length, axial deformation and contact resistance

Science.gov (United States)

Basiricò, L.; Lanzara, G.

2012-08-01

In this paper it is shown that the electrochemical behaviour of vertically aligned multi-walled carbon nanotube (VANT) supercapacitors is influenced by the VANTs’ length (electrode thickness), by their axial compression and by their interface with the current collector. It is found that the VANTs, which can be interpreted as a dense array of nanochannels, have an active area available to ions that is strongly affected by the electrode’s thickness and compressional state. Consequently, the tested thinner electrodes, compressed electrodes or a combination of the two were found to be characterized by a significant improvement in terms of power density (up to 1246%), knee frequency (58 822% working up to 10 kHz), equivalent series resistance (ESR, up to 67%) and capacitance (up to 21%) when compared with thicker and/or uncompressed electrodes. These values are significantly higher than those reported in the literature where long VANTs with no control on compression are typically used. It is also shown that the ESR can be reduced not only by using shorter and compressed VANTs that have a higher conductance or by improving the electrode/collector electrical contact by changing the contact morphology at the nanoscale through compression, but also by depositing a thin platinum layer on the VANT tips in contact with the current collector (73% ESR decrease).

Moving towards high-power, high-frequency and low-resistance CNT supercapacitors by tuning the CNT length, axial deformation and contact resistance

International Nuclear Information System (INIS)

Basiricò, L; Lanzara, G

2012-01-01

In this paper it is shown that the electrochemical behaviour of vertically aligned multi-walled carbon nanotube (VANT) supercapacitors is influenced by the VANTs’ length (electrode thickness), by their axial compression and by their interface with the current collector. It is found that the VANTs, which can be interpreted as a dense array of nanochannels, have an active area available to ions that is strongly affected by the electrode’s thickness and compressional state. Consequently, the tested thinner electrodes, compressed electrodes or a combination of the two were found to be characterized by a significant improvement in terms of power density (up to 1246%), knee frequency (58 822% working up to 10 kHz), equivalent series resistance (ESR, up to 67%) and capacitance (up to 21%) when compared with thicker and/or uncompressed electrodes. These values are significantly higher than those reported in the literature where long VANTs with no control on compression are typically used. It is also shown that the ESR can be reduced not only by using shorter and compressed VANTs that have a higher conductance or by improving the electrode/collector electrical contact by changing the contact morphology at the nanoscale through compression, but also by depositing a thin platinum layer on the VANT tips in contact with the current collector (73% ESR decrease). (paper)

Design and fabrication stable LNF contact for future IC application

International Nuclear Information System (INIS)

Bhuiyan, M M I; Bhuiyan, M; Rashid, M M; Ahmed, Sayem; Kajihara, M

2013-01-01

Enable the design of a small contact spring for applications requiring high density, high speed and high durability. A low normal force (LNF) contact spring with high performance is fabricated using a unique combined MEMS photo resist lithography and electro fine forming (EFF) technology. Reducing a total contact material cost of a connector, a high-Hertz stress with LNF contact will be a key technology in the future. Only radius R 5μm tip with 0.1N force contact provides an excellent electrical performance which is much sharper than conventional contact. 0.30million cycle's durability test was passed at 300μm displacement and the contact resistance was ≤50mΩ

Titanium contacts to graphene: process-induced variability in electronic and thermal transport

Science.gov (United States)

Freedy, Keren M.; Giri, Ashutosh; Foley, Brian M.; Barone, Matthew R.; Hopkins, Patrick E.; McDonnell, Stephen

2018-04-01

Contact resistance (R C) is a major limiting factor in the performance of graphene devices. R C is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact deposition conditions. In this work, a linear correlation is observed between the composition of Ti contacts, characterized by x-ray photoelectron spectroscopy, and the Ti/graphene contact resistance measured by the transfer length method. We find that contact composition is tunable via deposition rate and base pressure. Reactor base pressure is found to effect the resultant contact resistance. The effect of contact deposition conditions on thermal transport measured by time-domain thermoreflectance is also reported. Interfaces with higher oxide composition appear to result in a lower thermal boundary conductance. Possible origins of this thermal boundary conductance change with oxide composition are discussed.

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Directory of Open Access Journals (Sweden)

Filippo Giannazzo

2017-01-01

Full Text Available Molybdenum disulphide (MoS2 is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ and the threshold voltage (Vth. This paper reports a detailed electrical characterization of back-gated multilayer MoS2 transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient power dissipation. From the analysis of the transfer characteristics (ID−VG in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel was also determined and it was found to increase with T as RC proportional to T3.1. The contribution of RC to the extraction of μ and Vth was evaluated, showing a more than 10% underestimation of μ when the effect of RC is neglected, whereas the effect on Vth is less significant. The temperature dependence of μ and Vth was also investigated. A decrease of μ proportional to 1/Tα with α = 1.4 ± 0.3 was found, indicating scattering by optical phonons as the main limiting mechanism for mobility above room temperature. The value of Vth showed a large negative shift (about 6 V increasing the temperature from 298 to 373 K, which was explained in terms of electron

Magnetic field and contact resistance dependence of non-local charge imbalance

International Nuclear Information System (INIS)

Kleine, A; Baumgartner, A; Trbovic, J; Schoenenberger, C; Golubev, D S; Zaikin, A D

2010-01-01

Crossed Andreev reflection (CAR) in metallic nanostructures, a possible basis for solid-state electron entangler devices, is usually investigated by detecting non-local voltages in multi-terminal superconductor/normal metal devices. This task is difficult because other subgap processes may mask the effects of CAR. One of these processes is the generation of charge imbalance (CI) and the diffusion of non-equilibrium quasi-particles in the superconductor. Here we demonstrate a characteristic dependence of non-local CI on a magnetic field applied parallel to the superconducting wire, which can be understood by a generalization of the standard description of CI to non-local experiments. These results can be used to distinguish CAR and CI and to extract CI relaxation times in superconducting nanostructures. In addition, we investigate the dependence of non-local CI on the resistance of the injector and detector contacts and demonstrate a quantitative agreement with a recent theory using only material and junction characteristics extracted from separate direct measurements.

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Energy Technology Data Exchange (ETDEWEB)

Münzenrieder, Niko, E-mail: muenzenrieder@ife.ee.ethz.ch; Salvatore, Giovanni A.; Petti, Luisa; Zysset, Christoph; Büthe, Lars; Vogt, Christian; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory Swiss Federal Institute of Technology (ETH) Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

2014-12-29

In recent years new forms of electronic devices such as electronic papers, flexible displays, epidermal sensors, and smart textiles have become reality. Thin-film transistors (TFTs) are the basic blocks of the circuits used in such devices and need to operate above 100 MHz to efficiently treat signals in RF systems and address pixels in high resolution displays. Beyond the choice of the semiconductor, i.e., silicon, graphene, organics, or amorphous oxides, the junctionless nature of TFTs and its geometry imply some limitations which become evident and important in devices with scaled channel length. Furthermore, the mechanical instability of flexible substrates limits the feature size of flexible TFTs. Contact resistance and overlapping capacitance are two parasitic effects which limit the transit frequency of transistors. They are often considered independent, while a deeper analysis of TFTs geometry imposes to handle them together; in fact, they both depend on the overlapping length (L{sub OV}) between source/drain and the gate contacts. Here, we conduct a quantitative analysis based on a large number of flexible ultra-scaled IGZO TFTs. Devices with three different values of overlap length and channel length down to 0.5 μm are fabricated to experimentally investigate the scaling behavior of the transit frequency. Contact resistance and overlapping capacitance depend in opposite ways on L{sub OV}. These findings establish routes for the optimization of the dimension of source/drain contact pads and suggest design guidelines to achieve megahertz operation in flexible IGZO TFTs and circuits.

Improvement of the electrical contact resistance at rough interfaces using two dimensional materials

Energy Technology Data Exchange (ETDEWEB)

Hu, Jianchen; Pan, Chengbin; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Li, Heng [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China); CAPT, HEDPS and IFSA Collaborative Innovation Center of MoE, Peking University, Beijing 100871 (China); Shen, Panpan; Sun, Hui; Duan, Huiling [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, CAPT, College of Engineering, Peking University, Beijing 100871 (China)

2015-12-07

Reducing the electronic contact resistance at the interfaces of nanostructured materials is a major goal for many kinds of planar and three dimensional devices. In this work, we develop a method to enhance the electronic transport at rough interfaces by inserting a two dimensional flexible and conductive graphene sheet. We observe that an ultra-thin graphene layer with a thickness of 0.35 nm can remarkably reduce the roughness of a sample in a factor of 40%, avoiding the use of thick coatings, leading to a more homogeneous current flow, and extraordinarily increasing the total current compared to the graphene-free counterpart. Due to its simplicity and performance enhancement, this methodology can be of interest to many interface and device designers.

Novel Sn-Based Contact Structure for GeTe Phase Change Materials.

Science.gov (United States)

Simchi, Hamed; Cooley, Kayla A; Ding, Zelong; Molina, Alex; Mohney, Suzanne E

2018-05-16

Germanium telluride (GeTe) is a phase change material (PCM) that has gained recent attention because of its incorporation as an active material for radio frequency (RF) switches, as well as memory and novel optoelectronic devices. Considering PCM-based RF switches, parasitic resistances from Ohmic contacts can be a limiting factor in device performance. Reduction of the contact resistance ( R c ) is therefore critical for reducing the on-state resistance to meet the requirements of high-frequency RF applications. To engineer the Schottky barrier between the metal contact and GeTe, Sn was tested as an interesting candidate to alter the composition of the semiconductor near its surface, potentially forming a narrow band gap (0.2 eV) SnTe or a graded alloy with SnTe in GeTe. For this purpose, a novel contact stack of Sn/Fe/Au was employed and compared to a conventional Ti/Pt/Au stack. Two different premetallization surface treatments of HCl and deionized (DI) H 2 O were employed to make a Te-rich and Ge-rich interface, respectively. Contact resistance values were extracted using the refined transfer length method. The best results were obtained with DI H 2 O for the Sn-based contacts but HCl treatment for the Ti/Pt/Au contacts. The as-deposited contacts had the R c (ρ c ) of 0.006 Ω·mm (8 × 10 -9 Ω·cm 2 ) for Sn/Fe/Au and 0.010 Ω·mm (3 × 10 -8 Ω·cm 2 ) for Ti/Pt/Au. However, the Sn/Fe/Au contacts were thermally stable, and their resistance decreased further to 0.004 Ω·mm (4 × 10 -9 Ω·cm 2 ) after annealing at 200 °C. In contrast, the contact resistance of the Ti/Pt/Au stack increased to 0.012 Ω·mm (4 × 10 -8 Ω·cm 2 ). Transmission electron microscopy was used to characterize the interfacial reactions between the metals and GeTe. It was found that formation of SnTe at the interface, in addition to Fe diffusion (doping) into GeTe, is likely responsible for the superior performance of Sn/Fe/Au contacts, resulting in one of the lowest reported

Pentacene ohmic contact on the transparent conductive oxide films

International Nuclear Information System (INIS)

Chu, Jian-An; Zeng, Jian-Jhou; Wu, Kuo-Chen; Lin, Yow-Jon

2010-01-01

Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

Understanding the influence of tellurium oxide in front Ag paste for contacting silicon solar cells with homogeneous high sheet resistance emitter

Science.gov (United States)

Ebong, Abasifreke; Bezawada, Nirupama; Batchu, Kartheek

2017-08-01

This paper investigates TeO2, one of the front Ag paste additives, to understand its role in low contact and gridline resistances for screen-printed Si solar cell. It is concluded that TeO2 aids the reduction of molten glass frit viscosity during contact co-firing. This in turn, leads to uniform flow of molten glass frit, both in the gridline bulk and interface of gridline and SiN x . Therefore, the uniform wetting and etching of SiN x and consequently larger contact area of metal to Si compared to its counterpart without TeO2. Hence, the current transport mechanism from Si to gridline can be said to be both direct and tunneling. The Raman spectra showed a blue shift in the phase of the TeO2 after contact co-firing in the gridline bulk confirming a crystalline γ-TeO2.

Yield of facility-based verbal screening amongst household contacts of patients with multi-drug resistant tuberculosis in Pakistan

Directory of Open Access Journals (Sweden)

Ejaz Qadeer

2017-05-01

Full Text Available Background: Household contacts of multidrug-resistant tuberculosis (MDR-TB patients are at a high risk of getting infected with TB/MDR-TB, therefore symptomatic or vulnerable individuals should be screened and treated early. Methods: A cross-sectional study was conducted among household contacts of MDR-TB patients in three high-burden TB sites in Pakistan from July 2013 to June 2014. MDR-TB index patients were asked to provide a list of all members of their household and were asked whether any of them had TB symptoms such as productive cough, fever, weight loss and night sweat (“facility-based verbal screening”. Symptomatic contacts were defined as presumptive TB cases and were invited for investigations at the facility. Those who did not come were paid a home-visit. Confirmed TB/MDR-TB patients were registered in the nearest treatment facility. Results: Of 209 MDR-TB index patients, 1467 household contacts were identified and screened, 95 of them children < 5 years. Of these 172 (12% were symptomatic. Most common symptoms were cough 157 (91% and fever 107 (62%. 58 (34% presumptive TB contacts were not investigated. Of total contacts, 56 (3.8% were diagnosed with TB, among them 54(96% with MDR-TB and 2(4% with drug-susceptible-TB. The number needed to screen (NNS to identify a new MDR-TB case among adult household contacts was 27 and among presumptive adult and pediatric TB contacts was three. All 56 confirmed patients were registered for treatment. Conclusion: Screening household contacts of MDR-TB index cases may be considered a feasible and high yield option, in high-burden, low-resource settings within Pakistan. The number of presumptive TB contacts required to screen to identify a new MDR-TB case was unusually low, indicating an effective strategy that could easily be scaled-up. The screening and management of vulnerable adults and children living with patients having TB of any form is a major priority in the combined efforts

Multi-Material Front Contact for 19% Thin Film Solar Cells

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Joop van Deelen

2016-02-01

Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

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Krawczak Ewelina

2017-01-01

Full Text Available The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

Science.gov (United States)

Krawczak, Ewelina; Gułkowski, Sławomir

2017-10-01

The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Slip-rolling resistance of novel Zr(C,N) thin film coatings under high Hertzian contact pressures

Energy Technology Data Exchange (ETDEWEB)

Manier, Charles-Alix

2010-08-24

Today, coatings are used in many applications ranging from the decoration purposes to the improvement of efficiency such as in machining tools, medical tools, computer devices (hard disks) and many more. Especially the automotive industry anticipates a benefit in using coatings for example in powertrains and gears where the mechanical components are stressed under slip-rolling motion. A cost effective option to increase efficiency is based on the increase of the load carrying capacity by thin film coatings. It would also represent a way towards downsizing. In the work presented here, a small review concerning rolling contact fatigue of coatings was performed. Experimentally it is then shown, that crystalline Zr(C,N) coatings can be slip-rolling resistant at 120 C in factory fill engine oil up to ten million cycles under average Hertzian contact pressures up to P{sub 0mean} = 1.94 GPa (P{sub 0max} = 2.91 GPa). Basically, it represents here the doubling of the normal force acting on the surface compared to uncoated steel traditionally lubricated with fully formulated oil. Typically, the coated substrates are made of the quenched and tempered bearing steel Cronidur 30. The Zr(C,N) coatings were fully characterized using different characterisation techniques in order to understand the difference in slip-rolling resistance under those high tribological demands. Effectively, the slip-rolling resistance of different batches of the Zr(C,N) coatings is evaluated using a defined and powerful testing procedure. Different results of lifetime were achieved without fundamental changes of the deposition procedure. The characterisation achieved permits the identification of microstructural disparities which should affect the load carrying capacity of the coating. Moreover, the efficiency of the high slip-rolling resistant Zr(C,N) coating was considered not only with respect to the improvement of the load carrying capacity of the substrate but also in terms of tribological

Knockdown of μ-calpain in Fanconi Anemia, FA-A, cells by siRNA Restores αII Spectrin levels and Corrects Chromosomal Instability and Defective DNA Interstrand Cross-link Repair†

OpenAIRE

Zhang, Pan; Sridharan, Deepa; Lambert, Muriel W.

2010-01-01

We have previously shown that there is a deficiency in the structural protein, nonerythroid α spectrin (αIISp), in cells from patients with Fanconi anemia (FA). These studies indicate that this deficiency is due to reduced stability of αIISp and correlates with decreased repair of DNA interstrand cross-links and chromosomal instability in FA cells. An important factor in the stability of αIISp is its susceptibility to cleavage by the protease, μ-calpain. We hypothesized that increased μ-calpa...

Effects of nanoscale coatings on reliability of MEMS ohmic contact switches

Science.gov (United States)

Tremper, Amber Leigh

This thesis examines how the electrical and mechanical behavior of Au thin films is altered by the presence of ultra-thin metallic coatings. To examine the mechanical behavior, nanoindentation, nano-scratch, and atomic force microscopy (AFM) testing was performed. The electrical behavior was evaluated through Kelvin probe contact resistance measurements. This thesis shows that ultra-thin, hard, ductile coatings on a softer, ductile underlying layer (such as Ru or Pt on Au) had a significant effect on mechanical behavior of the system, and can be tailored to control the deformation resistance of the thin film system. Despite Ru and Pt having a higher hardness and plane strain modulus than Au, the Ru and Pt coatings decreased both the hardness and plane strain modulus of the layered system when the indentation depth was on the order of the coating thickness. Alternately, when the indentation depth was several times the coating thickness, the ductile, plastically hard, elastically stiff layer significantly hardened the contact response. These results correlate well with membrane stress theoretical predictions, and demonstrate that membrane theory can be applied even when the ratio of indentation depth, h, to coating thickness, t, is very large ( h/telectrical behavior of the Ru-coated Au films was examined, it was found that all the measured resistances of the Au-only film and Ru-coated systems were several orders of magnitude larger than those predicted by Holm's law, but were still in good agreement with previously reported values in the literature. Previous studies attributed the high contact resistances to a variety of causes, including the buildup of an insulating contamination layer. This thesis determined the cause of the deviations to be large sheet resistance contributions to the total measured resistance. Further, studies on aged samples (with thicker contamination layers) conclusively showed that, while contamination increases the contact resistance, it

Role of aluminum in silver paste contact to boron-doped silicon emitters

Directory of Open Access Journals (Sweden)

Wei Wu

2017-01-01

Full Text Available The addition of aluminum to silver metallization pastes has been found to lower the contact resistivity of a silver metallization on boron-doped silicon emitters for n-type Si solar cells. However, the addition of Al also induces more surface recombination and increases the Ag pattern′s line resistivity, both of which ultimately limit the cell efficiency. There is a need to develop a fundamental understanding of the role that Al plays in reducing the contact resistivity and to explore alternative additives. A fritless silver paste is used to allow direct analysis of the impact of Al on the Ag-Si interfacial microstructure and isolate the influence of Al on the electrical contact from the complicated Ag-Si interfacial glass layer. Electrical analysis shows that in a simplified system, Al decreases the contact resistivity by about three orders of magnitude. Detailed microstructural studies show that in the presence of Al, microscale metallic spikes of Al-Ag alloy and nanoscale metallic spikes of Ag-Si alloy penetrate the surface of the boron-doped Si emitters. These results demonstrate the role of Al in reducing the contact resistivity through the formation of micro- and nano-scale metallic spikes, allowing the direct contact to the emitters.

Effects of junction resistance and counterelectrode material on point-contact tunneling into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/

Energy Technology Data Exchange (ETDEWEB)

Moog, E.R.; Hawley, M.E.; Gray, K.E.; Liu, J.Z.; Hinks, D.G.; Capone, D.W. II; Downey, J.

1988-06-01

The effects of junction resistance and counterelectrode material on the results of point-contact tunneling studies into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/ are illustrated. Although reasonably symmetric I(V) curves predominantly indicate energy gap values /Delta/ /approx/ 20 meV, large asymmetries are often found for high-resistance junctions. Very low-resistance junctions show the expected behavior of pure metallic bridge and indicate /Delta/ /approx/ 25-30 meV.

A Study on Graphene—Metal Contact

Directory of Open Access Journals (Sweden)

Hongyu Yu

2013-03-01

Full Text Available The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1 metal preparation method; (2 asymmetric conductance; (3 annealing effect; (4 interfaces impact.

Application and analysis of palladium vapor deposited on stainless steel for high temperature electrical contacts

International Nuclear Information System (INIS)

Jodeh, S.

2008-01-01

Using electron beam evaporation. Pd thin films of 300 nm thickness have been deposited on 301 stainless steel for high temperature electrical contact studies. The structure and compost ion of the helms were studied in detail x-ray diffraction (XRD), scanning electron microscopy (Sem), electron probe microanalysis (EPMA), and x-ray photoelectron spectroscopy (XP S) with sputter depth profiling. The contact properties such as contact resistance, fretting wear resistance, and thermal stability have been measured.The contact resistance rem ins low after heat-aging in air for 168 h at 150 and 200 deg., but increases significantly after heat-aging at 340 deg.. This increase in contact resistance is caused by the formation of about a 27 nm (1 μin.) thick Pdo. In contrast, the thickness of the Pdo is too thin to cause measurable contact resistance increases after heat-aging at 150 and 200 deg.. The fretting wear resistance of Pd coated 301 stainless steel is better than that of electroplated Sn of ser veal thousand nm thickness. Thus, vapor deposited Pd coating on 301 stainless steel may replace electroplated Sn for electrical contact application at elevated temperatures.

On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

2016-01-01

The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Yu, Hailong; Shen, Huajun, E-mail: shenhuajun@ime.ac.cn; Tang, Yidan; Bai, Yun; Liu, Xinyu [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xufang [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wu, Yudong; Liu, Kean [Zhuzhou CSR Times Electric Co., Ltd, ZhuZhou 412001 (China)

2015-01-14

Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

Antibacterial surface design - Contact kill

Science.gov (United States)

Kaur, Rajbir; Liu, Song

2016-08-01

Designing antibacterial surfaces has become extremely important to minimize Healthcare Associated Infections which are a major cause of mortality worldwide. A previous biocide-releasing approach is based on leaching of encapsulated biocides such as silver and triclosan which exerts negative impacts on the environment and potentially contributes to the development of bacterial resistance. This drawback of leachable compounds led to the shift of interest towards a more sustainable and environmentally friendly approach: contact-killing surfaces. Biocides that can be bound onto surfaces to give the substrates contact-active antibacterial activity include quaternary ammonium compounds (QACs), quaternary phosphoniums (QPs), carbon nanotubes, antibacterial peptides, and N-chloramines. Among the above, QACs and N-chloramines are the most researched contact-active biocides. We review the engineering of contact-active surfaces using QACs or N-chloramines, the modes of actions as well as the test methods. The charge-density threshold of cationic surfaces for desired antibacterial efficacy and attempts to combine various biocides for the generation of new contact-active surfaces are discussed in detail. Surface positive charge density is identified as a key parameter to define antibacterial efficacy. We expect that this research field will continue to attract more research interest in view of the potential impact of self-disinfective surfaces on healthcare-associated infections, food safety and corrosion/fouling resistance required on industrial surfaces such as oil pipes and ship hulls.

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

Directory of Open Access Journals (Sweden)

Liang Song

2018-03-01

Full Text Available In this paper, we have studied the performance of Ti/Al/Ni/Au ohmic contact with different Al and Au thicknesses and pretreatments. The temperature dependence of contact resistances (Rc was investigated and it shows that there are different optimal annealing temperatures with different metal thicknesses and pretreatments. The optimal annealing temperature is affected by Al and Au thickness and AlGaN thickness. The etched AlGaN barrier is useful to achieve good ohmic contact (0.24 Ω·mm with a low annealing temperature. Only the contact resistances of the samples with 130 nm Al layer kept stable and the contact resistances of the samples with 100nm and 160 nm Al layers increased with the measurement temperatures. The contact resistances showed a similar increase and then keep stable trend for all the samples in the long-term 400 °C aging process. The ohmic metal of 20/130/50/50 nm Ti/Al/Ni/Au with ICP etching is the superior candidate considering the contact resistance and reliability.

Electroplated contacts and porous silicon for silicon based solar cells applications

Energy Technology Data Exchange (ETDEWEB)

Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

2015-04-15

Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

Science.gov (United States)

Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

1997-11-01

Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Science.gov (United States)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

Thermal conductivity of a graphite bipolar plate (BPP) and its thermal contact resistance with fuel cell gas diffusion layers: Effect of compression, PTFE, micro porous layer (MPL), BPP out-of-flatness and cyclic load

Science.gov (United States)

Sadeghifar, Hamidreza; Djilali, Ned; Bahrami, Majid

2015-01-01

This paper reports on measurements of thermal conductivity of a graphite bipolar plate (BPP) as a function of temperature and its thermal contact resistance (TCR) with treated and untreated gas diffusion layers (GDLs). The thermal conductivity of the BPP decreases with temperature and its thermal contact resistance with GDLs, which has been overlooked in the literature, is found to be dominant over a relatively wide range of compression. The effects of PTFE loading, micro porous layer (MPL), compression, and BPP out-of-flatness are also investigated experimentally. It is found that high PTFE loadings, MPL and even small BPP out-of-flatness increase the BPP-GDL thermal contact resistance dramatically. The paper also presents the effect of cyclic load on the total resistance of a GDL-BPP assembly, which sheds light on the behavior of these materials under operating conditions in polymer electrolyte membrane fuel cells.

Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact.

Science.gov (United States)

Ling, Haifeng; Yi, Mingdong; Nagai, Masaru; Xie, Linghai; Wang, Laiyuan; Hu, Bo; Huang, Wei

2017-09-01

Conductive filaments (CFs)-based resistive random access memory possesses the ability of scaling down to sub-nanoscale with high-density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium-tin-oxide (ITO), with poly(9-vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic-gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone-shaped contact via a one-step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evaluation of Tire/Surfacing/Base Contact Stresses and Texture Depth

Directory of Open Access Journals (Sweden)

W.J.vdM. Steyn

2015-03-01

Full Text Available Tire rolling resistance has a major impact on vehicle fuel consumption. Rolling resistance is the loss of energy due to the interaction between the tire and the pavement surface. This interaction is a complicated combination of stresses and strains which depend on both tire and pavement related factors. These include vehicle speed, vehicle weight, tire material and type, road camber, tire inflation pressure, pavement surfacing texture etc. In this paper the relationship between pavement surface texture depth and tire/surfacing contact stress and area is investigated. Texture depth and tire/surfacing contact stress were measured for a range of tire inflation pressures on five different pavement surfaces. In the analysis the relationship between texture and the generated contact stresses as well as the contact stress between the surfacing and base layer are presented and discussed, and the anticipated effect of these relationships on the rolling resistance of vehicles on the surfacings, and subsequent vehicle fuel economy discussed.

Screening and contact precautions – A survey on infection control measures for multidrug-resistant bacteria in German university hospitals

Directory of Open Access Journals (Sweden)

Lena M. Biehl

2017-04-01

Full Text Available Abstract To assess the scope of infection control measures for multidrug-resistant bacteria in high-risk settings, a survey among university hospitals was conducted. Fourteen professionals from 8 sites participated. Reported policies varied largely with respect to the types of wards conducting screening, sample types used for screening and implementation of contact precautions. This variability among sites highlights the need for an evidence-based consensus of current infection control policies.

Reduced contact resistance of a-IGZO thin film transistors with inkjet-printed silver electrodes

Science.gov (United States)

Chen, Jianqiu; Ning, Honglong; Fang, Zhiqiang; Tao, Ruiqiang; Yang, Caigui; Zhou, Yicong; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao

2018-04-01

In this study, high performance amorphous In–Ga–Zn–O (a-IGZO) TFTs were successfully fabricated with inkjet-printed silver source-drain electrodes. The results showed that increased channel thickness has an improving trend in the properties of TFTs due to the decreased contact resistance. Compared with sputtered silver TFTs, devices with printed silver electrodes were more sensitive to the thickness of active layer. Furthermore, the devices with optimized active layer showed high performances with a maximum saturation mobility of 8.73 cm2 · V‑1 · S‑1 and an average saturation mobility of 6.97 cm2 · V‑1 · S‑1, I on/I off ratio more than 107 and subthreshold swing of 0.28 V/decade, which were comparable with the analogous devices with sputtered electrodes.

ATR-p53 restricts homologous recombination in response to replicative stress but does not limit DNA interstrand crosslink repair in lung cancer cells.

Directory of Open Access Journals (Sweden)

Bianca M Sirbu

Full Text Available Homologous recombination (HR is required for the restart of collapsed DNA replication forks and error-free repair of DNA double-strand breaks (DSB. However, unscheduled or hyperactive HR may lead to genomic instability and promote cancer development. The cellular factors that restrict HR processes in mammalian cells are only beginning to be elucidated. The tumor suppressor p53 has been implicated in the suppression of HR though it has remained unclear why p53, as the guardian of the genome, would impair an error-free repair process. Here, we show for the first time that p53 downregulates foci formation of the RAD51 recombinase in response to replicative stress in H1299 lung cancer cells in a manner that is independent of its role as a transcription factor. We find that this downregulation of HR is not only completely dependent on the binding site of p53 with replication protein A but also the ATR/ATM serine 15 phosphorylation site. Genetic analysis suggests that ATR but not ATM kinase modulates p53's function in HR. The suppression of HR by p53 can be bypassed under experimental conditions that cause DSB either directly or indirectly, in line with p53's role as a guardian of the genome. As a result, transactivation-inactive p53 does not compromise the resistance of H1299 cells to the interstrand crosslinking agent mitomycin C. Altogether, our data support a model in which p53 plays an anti-recombinogenic role in the ATR-dependent mammalian replication checkpoint but does not impair a cell's ability to use HR for the removal of DSB induced by cytotoxic agents.

All-graphene edge contacts

DEFF Research Database (Denmark)

Jacobsen, Kåre Wedel; Falkenberg, Jesper Toft; Papior, Nick Rübner

2016-01-01

Using ab-initio methods we investigate the possibility of three-terminalgraphene "T-junction" devices and show that these all-graphene edge contactsare energetically feasible when the 1D interface itself is free from foreignatoms. We examine the energetics of various junction structures as a func......Using ab-initio methods we investigate the possibility of three-terminalgraphene "T-junction" devices and show that these all-graphene edge contactsare energetically feasible when the 1D interface itself is free from foreignatoms. We examine the energetics of various junction structures...... to be in therange of 1-10 kΩμm which is comparable to the best contact resistance reportedfor edge-contacted graphene-metal contacts. We conclude that conductingall-carbon T-junctions should be feasible....

A new method of making ohmic contacts to p-GaN

Energy Technology Data Exchange (ETDEWEB)

Hernández-Gutierrez, C.A., E-mail: chernandez@fis.cinvestav.mx [DNyN, Cinvestav-IPN, México, DF, 07360 (Mexico); Kudriavtsev, Yu. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Mota, Esteban [ESIME, Instituto Politécnico Nacional, México, DF, 07738 (Mexico); Hernández, A.G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Casallas-Moreno, Y.L.; López-López, M. [Departamento Física, Cinvestav-IPN, México, DF, 07360 (Mexico)

2016-12-01

Highlights: • Low resistance Ohmic contacts preparation is based on low energy high dose In{sup +} ion implantation into Metal/p-GaN to achieve a thin layer of In{sub x}Ga{sub 1-x}N just at the interface. • The specific ohmic contact was reduced from 10{sup −2} Ωcm{sup 2} to 2.5 × 10{sup −4} Ωcm{sup 2}. - Abstract: The structural, chemical, and electrical characteristics of In{sup +} ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In{sup +} ions with an implantation dose of 5 × 10{sup 15} ions/cm{sup 2} at room temperature to form a thin layer of In{sub x}Ga{sub 1-x}N located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In{sup +} implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10{sup −4} Ωcm{sup 2} was achieved for Au/Ni/p-In{sub x}Ga{sub 1-x}N/p-GaN ohmic contacts.

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Science.gov (United States)

Sarkar, Biplab; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Rounds, Robert; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

2018-01-01

Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures. All contacts showed a nonlinear behavior, which became stronger for lower doping concentrations. Electrical and structural analysis indicated that the current conduction between the contact and the p-GaN was through localized nano-sized clusters. Thus, the non-linear contact behavior can be well explained using the alloyed contact model. Two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrically active clusters with the semiconductor. Hence, the equivalent Ni/Au contact model consists of a diode and a resistor in series for each active cluster. The reduced barrier height observed in the measurements is thought to be generated by the extraction of Ga from the crystalline surface and localized formation of the Au:Ga phase. The alloyed contact analyses presented in this work are in good agreement with some of the commonly observed behavior of similar contacts described in the literature.

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

Energy Technology Data Exchange (ETDEWEB)

Li, Wei [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Hacker, Christina A.; Cheng, Guangjun; Hight Walker, A. R.; Richter, Curt A.; Gundlach, David J., E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Liang, Yiran; Tian, Boyuan; Liang, Xuelei, E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn; Peng, Lianmao [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)

2014-03-21

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

International Nuclear Information System (INIS)

Li, Wei; Hacker, Christina A.; Cheng, Guangjun; Hight Walker, A. R.; Richter, Curt A.; Gundlach, David J.; Liang, Yiran; Tian, Boyuan; Liang, Xuelei; Peng, Lianmao

2014-01-01

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Directory of Open Access Journals (Sweden)

Patrick H. Carey IV

2017-09-01

Full Text Available AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Science.gov (United States)

Carey, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

2017-09-01

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 40 0°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

The importance of the neutral region resistance for the calculation of the interface state in Pb/p-Si Schottky contacts

International Nuclear Information System (INIS)

Aydin, M.E.; Akkilic, K.; Kilicoglu, T.

2004-01-01

We have fabricated H-terminated Pb/p-type Si Schottky contacts with and without the native oxide layer to explain the importance of the fact that the neutral region resistance value is considered in calculating the interface state density distribution from the nonideal forward bias current-voltage (I-V) characteristics. The diodes with the native oxide layer (metal-insulating layer-semiconductor (MIS)) showed nonideal I-V behavior with an ideality factor value of 1.310 and the barrier height value of 0.746eV. An ideality factor value of 1.065 and a barrier height value of 0.743eV were obtained for the diodes without the native oxide layer (MS). At the same energy position near the top of the valance band, the calculated interface states density (Nss) values, obtained without taking into account the series resistance of the devices (i.e. without subtracting the voltage drop across the series resistance from the applied voltage values V) is almost one order of magnitude larger than Nss values obtained by taking into account the series resistance

Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors

Directory of Open Access Journals (Sweden)

Xinge Yu

2012-06-01

Full Text Available Bottom-contact pentacene field-effect transistors were fabricated with a PMMA dielectric layer, and the air stability of the transistors was investigated. To characterize the device stability, the field-effect transistors were exposed to ambient conditions for 30 days and subsequently characterized. The degradation of electrical performance was traced to study the variation of field-effect mobility, saturation current and off-state current. By investigating the morphology variance of the pentacene film at the channel and source/drain (S/D contact regions by atomic force microscopy, it was clear that the morphology of the pentacene film adhered to the S/D degenerated dramatically. Moreover, by studying the variation of contact resistance in detail, it was found that the S/D contact effect was the main reason for the degradation in performance.

Palladium silicide - a new contact for semiconductor radiation detectors

International Nuclear Information System (INIS)

Totterdell, D.H.J.

1981-11-01

Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

Characterization of Deposited Platinum Contacts onto Discrete Graphene Flakes for Electrical Devices

KAUST Repository

Holguin Lerma, Jorge A.

2016-05-03

For years, electron beam induced deposition has been used to fabricate electrical contacts for micro and nanostructures. The role of the contact resistance is key to achieve high performance and efficiency in electrical devices. The present thesis reports on the electrical, structural and chemical characterization of electron beam deposited platinum electrodes that are exposed to different steps of thermal annealing and how they are used in four-probe devices of ultrathin graphite (uG) flakes (<100nm thickness). The device integration of liquid phase exfoliated uG is demonstrated, and its performance compared to devices made with analogous mechanically exfoliated uG. For both devices, similar contact resistances of ~2kΩ were obtained. The electrical measurements confirm a 99.5% reduction in contact resistance after vacuum thermal annealing at 300 °C. Parallel to this, Raman characterization confirms the formation of a nanocrystalline carbon structure over the electrode. While this could suggest an enhancement of the electrical transport in the device, an additional thermal annealing step in air at 300 °C, promoted the oxidation and removal of the carbon shell and confirmed that the contact resistance remained the same. Overall this shows that the carbon shell along the electrode has no significant role in the contact resistance. Finally, the challenges based on topographical analysis of the deposited electrodes are discussed. Reduction of the electrode’s height down to one-third of the initial value, increased surface roughness, formation of voids along the electrodes and the onset of platinum nanoparticles near the area of deposition, represent a challenge for future work.

A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

International Nuclear Information System (INIS)

Basu, A; Adams, G G; McGruer, N E

2016-01-01

Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs. (paper)

Contact metallurgy optimization for ohmic contacts to InP

DEFF Research Database (Denmark)

Clausen, Thomas; Pedersen, Arne Skyggebjerg; Leistiko, Otto

1991-01-01

AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowe...

Genome-wide mutagenesis and multi-drug resistance in American trypanosomes induced by the front-line drug benznidazole

KAUST Repository

Campos, Mônica C.

2017-10-25

Chagas disease is caused by the protozoan parasite Trypanosoma cruzi and affects 5–8 million people in Latin America. Although the nitroheterocyclic compound benznidazole has been the front-line drug for several decades, treatment failures are common. Benznidazole is a pro-drug and is bio-activated within the parasite by the mitochondrial nitroreductase TcNTR-1, leading to the generation of reactive metabolites that have trypanocidal activity. To better assess drug action and resistance, we sequenced the genomes of T. cruzi Y strain (35.5 Mb) and three benznidazole-resistant clones derived from a single drug-selected population. This revealed the genome-wide accumulation of mutations in the resistant parasites, in addition to variations in DNA copy-number. We observed mutations in DNA repair genes, linked with increased susceptibility to DNA alkylating and inter-strand cross-linking agents. Stop-codon-generating mutations in TcNTR-1 were associated with cross-resistance to other nitroheterocyclic drugs. Unexpectedly, the clones were also highly resistant to the ergosterol biosynthesis inhibitor posaconazole, a drug proposed for use against T. cruzi infections, in combination with benznidazole. Our findings therefore identify the highly mutagenic activity of benznidazole metabolites in T. cruzi, demonstrate that this can result in multi-drug resistance, and indicate that vigilance will be required if benznidazole is used in combination therapy.

Understanding channel and contact effects on transport in 1-dimensional nanotransistors.

Energy Technology Data Exchange (ETDEWEB)

Swartzentruber, Brian S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Delker, Collin James [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Yoo, Jinkyoung [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Janes, David B. [Purdue Univ., West Lafayette, IN (United States)

2015-02-01

Nanowire transistors are generally formed by metal contacts to a uniformly doped nanowire. The transistor can be modeled as a series combination of resistances from both the channel and the contacts. In this study, a simple model is proposed consisting of a resistive channel in series with two Schottky metal-semiconductor contacts modeled using the WKB approximation. This model captures several phenomena commonly observed in nanowire transistor measurements, including the mobility as a function of gate potential, mobility reduction with respect to bulk mobility, and non-linearities in output characteristics. For example, the maximum measured mobility as a function of gate voltage in a nanowire transistor can be predicted based on the semiconductor bulk mobility in addition to barrier height and other properties of the contact. The model is then extended to nanowires with axial p-n junctions having an inde- pendent gate over each wire segment by splitting the channel resistance into a series component for each doping segment. Finally, the contact-channel model is applied to low-frequency noise analysis in nanowire devices, where the noise can be generated in both the channel and the contacts. Because contacts play a major, yet often neglected, role in nanowire transistor operation, they must be accounted for in order to extract meaningful parameters from I-V and noise measurements.

Investigations of metal contacts to amorphous evaporated Ge films and amorphous sputtered Si films

International Nuclear Information System (INIS)

Hafiz, M.; Mgbenu, E.; Tove, P.A.; Norde, H.; Petersson, S.

1976-02-01

Amorphous Ge or Si films have been used as ohmic contacts to high-resistivity n-silicon radiation detectors. One interesting property of this contact is that it does not inject minority carriers even when the depletion region extends up to the contact thus generating an extracting field there. The function of this contact is not yet fully explored. One part problem is the role of the metal films used as external contacts to the amorphous film. In this report the function of different contacting metals, such as Au, Al, Cr are investigated by measuring the I-V-characteristics of sandwich structures with two metals on both sides of the amorphous evaporated (Ge) and sputtered (Si) film (of typical thickness 1000 A). It was found that while the symmetric structures Au-αGe-Au and Cr-αGe-Cr were low-resistive (leading to resistivity values of approximately 10 5 Ωcm for the αGe film), Al-αGe-Al structures showed much higher resistance and were also polarity dependent. The former feature was found also for unsymmetric structures, i.e. Cr-αGe-Au, Cr-αGe-Al. (Auth.)

RPA-Mediated Recruitment of the E3 Ligase RFWD3 Is Vital for Interstrand Crosslink Repair and Human Health.

Science.gov (United States)

Feeney, Laura; Muñoz, Ivan M; Lachaud, Christophe; Toth, Rachel; Appleton, Paul L; Schindler, Detlev; Rouse, John

2017-06-01

Defects in the repair of DNA interstrand crosslinks (ICLs) are associated with the genome instability syndrome Fanconi anemia (FA). Here we report that cells with mutations in RFWD3, an E3 ubiquitin ligase that interacts with and ubiquitylates replication protein A (RPA), show profound defects in ICL repair. An amino acid substitution in the WD40 repeats of RFWD3 (I639K) found in a new FA subtype abolishes interaction of RFWD3 with RPA, thereby preventing RFWD3 recruitment to sites of ICL-induced replication fork stalling. Moreover, single point mutations in the RPA32 subunit of RPA that abolish interaction with RFWD3 also inhibit ICL repair, demonstrating that RPA-mediated RFWD3 recruitment to stalled replication forks is important for ICL repair. We also report that unloading of RPA from sites of ICL induction is perturbed in RFWD3-deficient cells. These data reveal important roles for RFWD3 localization in protecting genome stability and preserving human health. Copyright © 2017 The Authors. Published by Elsevier Inc. All rights reserved.

Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

NARCIS (Netherlands)

Jacobs, B.; Krämer, M.C.J.C.M.; Geluk, E.J.; Karouta, F.

2002-01-01

We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm

Effect of different atmospheres on the electrical contact performance of electronic components under fretting wear

Science.gov (United States)

Liu, Xin-Long; Cai, Zhen-Bing; Cui, Ye; Liu, Shan-Bang; Xu, Xiao-Jun; Zhu, Min-Hao

2018-04-01

The effects of oxide etch on the surface morphology of metals for industrial application is a common cause of electrical contacts failure, and it has becomes a more severe problem with the miniaturization of modern electronic devices. This study investigated the effects of electrical contact resistance on the contactor under three different atmospheres (oxygen, air, and nitrogen) based on 99.9% copper/pogo pins contacts through fretting experiments. The results showed the minimum and stable electrical contact resistance value when shrouded in the nitrogen environment and with high friction coefficient. The rich oxygen environment promotes the formation of cuprous oxide, thereby the electrical contact resistance increases. Scanning electron microscope microscopy and electron probe microanalysis were used to analyze the morphology and distribution of elements of the wear area, respectively. The surface product between contacts was investigated by x-ray photoelectron spectroscopy analysis to explain the different electrical contact properties of the three tested samples during fretting.

Investigation of biofilm formation on contact eye lenses caused by methicillin resistant Staphylococcus aureus.

Science.gov (United States)

Khalil, M A; Sonbol, F I

2014-01-01

The objective was to investigate the biofilm-forming capacity of methicillin resistant Staphylococcus aureus (MRSA) isolated from eye lenses of infected patients. A total of 32 MRSA isolated from contact lenses of patients with ocular infections were screened for their biofilm-forming capacity using tube method (TM), Congo red agar (CRA), and microtiter plate (MtP) methods. The effect of some stress factor on the biofilm formation was studied. The biofilm-forming related genes, icaA, icaD and 10 microbial surface components that recognize adhesive matrix molecule (MSCRAMM), of the selected MRSA were also detected using polymerase chain reaction. Of 32 MRSA isolates, 34.37%, 59.37%, and 81.25% showed positive results using CRA, TM or MtP, respectively. Biofilm production was found to be reduced in the presence of ethanol or ethylenediaminetetraacetic acid and at extreme pH values. On the other hand, glucose or heparin leads to a concentration dependent increase of biofilm production by the isolates. The selected biofilm producing MRSA isolate was found to harbor the icaA, icaD and up to nine of 10 tested MSCRAMM genes, whereas the selected non biofilm producing MRSA isolate did not carry any of the tested genes. The MtP method was found to be the most effective phenotypic screening method for detection of biofilm formation by MRSA. Furthermore, the molecular approach should be taken into consideration for the rapid and correct diagnosis of virulent bacteria associated with contact eye lenses.

Contact behavior modelling and its size effect on proton exchange membrane fuel cell

Science.gov (United States)

Qiu, Diankai; Peng, Linfa; Yi, Peiyun; Lai, Xinmin; Janßen, Holger; Lehnert, Werner

2017-10-01

Contact behavior between the gas diffusion layer (GDL) and bipolar plate (BPP) is of significant importance for proton exchange membrane fuel cells. Most current studies on contact behavior utilize experiments and finite element modelling and focus on fuel cells with graphite BPPs, which lead to high costs and huge computational requirements. The objective of this work is to build a more effective analytical method for contact behavior in fuel cells and investigate the size effect resulting from configuration alteration of channel and rib (channel/rib). Firstly, a mathematical description of channel/rib geometry is outlined in accordance with the fabrication of metallic BPP. Based on the interface deformation characteristic and Winkler surface model, contact pressure between BPP and GDL is then calculated to predict contact resistance and GDL porosity as evaluative parameters of contact behavior. Then, experiments on BPP fabrication and contact resistance measurement are conducted to validate the model. The measured results demonstrate an obvious dependence on channel/rib size. Feasibility of the model used in graphite fuel cells is also discussed. Finally, size factor is proposed for evaluating the rule of size effect. Significant increase occurs in contact resistance and porosity for higher size factor, in which channel/rib width decrease.

Induction and removal of DNA interstrand cross-links in V-79 Chinese hamster cells measured by hydroxylapatite chromatography after treatments with bifunctional furocoumarins

International Nuclear Information System (INIS)

Dardalhon, M.; Averbeck, D.

1988-01-01

DNA interstrand crosslinks (CL) photoinduced by bifunctional furocoumarins in V-79 Chinese hamster cells were measured by alkaline denaturation and hydroxylapatite chromatography. Treatments with 5-methoxypsoralen (5-MOP), 8-methoxypsoralen (8-MOP) and 4,5',8-trimethylpsoralen (4,5',8-TMP) and 365 nm irradiation (UVA) confer a dose-dependent linear increase in the amount of double-stranded DNA indicating the induction of CL. Determination in alkaline sucrose gradients of the molecular weight of the DNA and estimation of drug-induced strand breakage allowed quantification of the CL induced. 5-MOP was found to be slightly more effective than 8-MOP whereas 4,5',8-TMP was 9 times more effective for the induction of CL. The fate of CL during post-treatment incubation was also followed. Cells in exponential growth phase were found to be efficient in the removal of CL. (Author)

Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga0.47As field-effect transistors

Directory of Open Access Journals (Sweden)

M.-H. Liao

2013-09-01

Full Text Available In this work, we demonstrate the ultra-low contact resistivity of 6.7 × 10−9 Ω/cm2 by inserting 0.6-nm-ZnO between Al and InGaAs(Si: 1.5 × 1019 cm−3. The metal-insulator-semiconductor tunneling diode with 0.6-nm-ZnO exhibits nearly zero (0.03 eV barrier height. We apply this contact structure on the source/drain of implant-free In0.53Ga0.47As quantum-well metal-oxide-semiconductor field- effect transistors. The excellent on-state performance such as saturation drain current of 3 × 10−4 A/μm and peak transconductance of 1250 μS/μm is obtained which is attributed to the ultra-low source/drain resistance of 190 Ω-μm.

All-Elastomer 3-Axis Contact Resistive Tactile Sensor Arrays and Micromilled Manufacturing Methods Thereof

Science.gov (United States)

Charalambides, Alexandros (Inventor); Bergbreiter, Sarah (Inventor); Penskiy, Ivan (Inventor)

2018-01-01

At least one tactile sensor includes an insulating layer and a conductive layer formed on the surface of the insulating layer. The conductive layer defines at least one group of flexible projections extending orthogonally from the surface of the insulating layer. The flexible projections include a major projection extending a distance orthogonally from the surface and at least one minor projection that is adjacent to and separate from the major projection wherein the major projection extends a distance orthogonally that is greater than the distance that the minor projection extends orthogonally. Upon a compressive force normal to, or a shear force parallel to, the surface, the major projection and the minor projection flex such that an electrical contact resistance is formed between the major projection and the minor projection. A capacitive tactile sensor is also disclosed that responds to the normal and shear forces.

Numerical investigation of flow field configuration and contact resistance for PEM fuel cell performance

Energy Technology Data Exchange (ETDEWEB)

Akbari, Mohammad Hadi; Rismanchi, Behzad [Department of Mechanical Engineering, Shiraz University, Shiraz 71348-51154 (Iran)

2008-08-15

A steady-state three-dimensional non-isothermal computational fluid dynamics (CFD) model of a proton exchange membrane fuel cell is presented. Conservation of mass, momentum, species, energy, and charge, as well as electrochemical kinetics are considered. In this model, the effect of interfacial contact resistance is also included. The numerical solution is based on a finite-volume method. In this study the effects of flow channel dimensions on the cell performance are investigated. Simulation results indicate that increasing the channel width will improve the limiting current density. However, it is observed that an optimum shoulder size of the flow channels exists for which the cell performance is the highest. Polarization curves are obtained for different operating conditions which, in general, compare favorably with the corresponding experimental data. Such a CFD model can be used as a tool in the development and optimization of PEM fuel cells. (author)

Effect of Rolling Resistance in Dem Models With Spherical Bodies

Directory of Open Access Journals (Sweden)

Dubina Radek

2016-12-01

Full Text Available The rolling resistance is an artificial moment arising on the contact of two discrete elements which mimics resistance of two grains of complex shape in contact rolling relatively to each other. The paper investigates the influence of rolling resistance on behaviour of an assembly of spherical discrete elements. Besides the resistance to rolling, the contacts between spherical particles obey the Hertzian law in normal straining and Coulomb model of friction in shear.

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

2015-02-02

Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

Resistance of Acanthamoeba cysts to disinfection in multiple contact lens solutions.

Science.gov (United States)

Johnston, Stephanie P; Sriram, Rama; Qvarnstrom, Yvonne; Roy, Sharon; Verani, Jennifer; Yoder, Jonathan; Lorick, Suchita; Roberts, Jacquelin; Beach, Michael J; Visvesvara, Govinda

2009-07-01

Acanthamoebae are free-living amoebae found in the environment, including soil, freshwater, brackish water, seawater, hot tubs, and Jacuzzis. Acanthamoeba species can cause keratitis, a painful vision-threatening infection of the cornea, and fatal granulomatous encephalitis in humans. More than 20 species of Acanthamoeba belonging to morphological groups I, II, and III distributed in 15 genotypes have been described. Among these, Acanthamoeba castellanii, A. polyphaga, and A. hatchetti are frequently identified as causing Acanthamoeba keratitis (AK). Improper contact lens care and contact with nonsterile water while wearing contact lenses are known risk factors for AK. During a recent multistate outbreak, AK was found to be associated with the use of Advanced Medical Optics Complete MoisturePlus multipurpose contact lens solution, which was hypothesized to have had insufficient anti-Acanthamoeba activity. As part of the investigation of that outbreak, we compared the efficacies of 11 different contact lens solutions against cysts of A. castellanii, A. polyphaga, and A. hatchetti (the isolates of all species were genotype T4), which were isolated in 2007 from specimens obtained during the outbreak investigation. The data, generated with A. castellanii, A. polyphaga, and A. hatchetti cysts, suggest that the two contact lens solutions containing hydrogen peroxide were the only solutions that showed any disinfection ability, with 0% and 66% growth, respectively, being detected with A. castellanii and 0% and 33% growth, respectively, being detected with A. polyphaga. There was no statistically significant difference in disinfection efficacy between the 11 solutions for A. hatchetti.

Preparation and characterization of platinum(II) and (IV) complexes of 1,3-diaminepropane and 1,4-diaminebutane: circumvention of cisplatin resistance and DNA interstrand cross-link formation in CH1cisR ovarian tumor cells.

Science.gov (United States)

Alvarez-Valdés, Amparo; Pérez, José Manuel; López-Solera, Isabel; Lannegrand, Raúl; Continente, José Manuel; Amo-Ochoa, Pilar; Camazón, María José; Solans, Xavier; Font-Bardía, Mercè; Navarro-Ranninger, Carmen

2002-04-25

The reaction of Pt(dimethyl sulfoxide)(2)CBDCA (CBDCA = 1,1-cyclobutanedicarboxylate) with 1,4-diaminebutane and 1,3-diaminepropane ligands yields, under certain conditions, new [Pt(diamine)(2)]CBDCA complexes (1a,b), where the CBDCA ligand has been removed from the coordination sphere of the platinum atom by the diamine ligand, instead of forming the expected [Pt(diamine)CBDCA] complexes (1'a,b). The structure of complexes 1a and 1'b was solved by X-ray diffraction. Complex 1a crystallizes in the orthorhombic system, in the noncentrosymmetric C222 space group, with unit cell parameters: a = 20.053(2) A; b = 8.655(2) A, c = 5.711(3) A; V = 991.2(6) A(3); delta (calcd) = 1.627 mg/m(3); and R = 0.050. The Pt atom displays an unexpected distorted tetrahedral coordination with a N-Pt-N inner bond angle equal to 81(2) degrees for N atoms of the same 1,3-propanediamine ligand and a N-Pt-N bond angle for different ligands equal to 135.4(9) degrees. Complex 1'b crystallizes in the monoclinic system, in the centrosymmetric P2(1)/c space group, with unit cell parameters: a = 6.007(2) A; b = 15.336(4) A, c = 13.232(5) A; beta = 101.90(3) degrees; V = 1192.8(7) A(3); delta (calcd) = 2.369 mg/m(3); and R = 0.067. Cytotoxicity data show that of all the synthesized compounds, only complexes 1'a and 1'b exhibit remarkable cytotoxic properties. Thus, in contrast with carboplatin (cis-diammine-1,1-cyclobutane dicarboxilatoplatinum(II)), compounds 1'a and 1'b, which also contain the CBDCA ligand, are able to circumvent cisplatin (cis-diamminedichloroplatinum(II)) resistance in several tumor cells. Moreover, after 24 h of incubation of CH1cisR ovarian tumor cells with 10 microM of compounds 1'a and 1'b, the level of DNA interstrand cross-links (ICLs) induced by compounds 1'a and 1'b is 3.3 and 3.8 times higher, respectively, than that of carboplatin and 3.5 and 4.0 times higher, respectively, than that of cisplatin. Interestingly, under the same conditions, the intracellular

Recruitment and positioning determine the specific role of the XPF-ERCC1 endonuclease in interstrand crosslink repair.

Science.gov (United States)

Klein Douwel, Daisy; Hoogenboom, Wouter S; Boonen, Rick Acm; Knipscheer, Puck

2017-07-14

XPF-ERCC1 is a structure-specific endonuclease pivotal for several DNA repair pathways and, when mutated, can cause multiple diseases. Although the disease-specific mutations are thought to affect different DNA repair pathways, the molecular basis for this is unknown. Here we examine the function of XPF-ERCC1 in DNA interstrand crosslink (ICL) repair. We used Xenopus egg extracts to measure both ICL and nucleotide excision repair, and we identified mutations that are specifically defective in ICL repair. One of these separation-of-function mutations resides in the helicase-like domain of XPF and disrupts binding to SLX4 and recruitment to the ICL A small deletion in the same domain supports recruitment of XPF to the ICL, but inhibited the unhooking incisions most likely by disrupting a second, transient interaction with SLX4. Finally, mutation of residues in the nuclease domain did not affect localization of XPF-ERCC1 to the ICL but did prevent incisions on the ICL substrate. Our data support a model in which the ICL repair-specific function of XPF-ERCC1 is dependent on recruitment, positioning and substrate recognition. © 2017 The Authors. Published under the terms of the CC BY 4.0 license.

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

DEFF Research Database (Denmark)

Kehagias, N.; Reboud, V.; Chansin, G.

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer...... are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed...... polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three...

On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

Energy Technology Data Exchange (ETDEWEB)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

2016-08-15

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Numerical Modeling of Electrical Contact Conductance of Rough Bodies

Directory of Open Access Journals (Sweden)

M. V. Murashov

2015-01-01

Full Text Available Since the beginning of the 20th century to the present time, efforts have been made to develop a model of the electrical contact conductance. The development of micro- and nanotechnologies make contact conductance problem more essential. To conduct borrowing from a welldeveloped thermal contact conductance models on the basis of thermal and electrical conductivity analogy is often not possible due to a number of fundamental differences. While some 3Dmodels of rough bodies deformation have been developed in one way or another, a 3D-model of the electrical conductance through rough bodies contact is still not. A spatial model of electrical contact of rough bodies is proposed, allows one to calculate the electrical contact conductance as a function of the contact pressure. Representative elements of the bodies are parallelepipeds with deterministic roughness on the contacting surfaces. First the non-linear elastic-plastic deformation of rough surface under external pressure is solved using the finite element software ANSYS. Then the solution of electrostatic problem goes on the same finite element mesh. Aluminum AD1 is used as the material of the contacting bodies with properties that account for cold work hardening of the surface. The numerical model is built within the continuum mechanics and nanoscale effects are not taken into account. The electrical contact conductance was calculated on the basis of the concept of electrical resistance of the model as the sum of the electrical resistances of the contacting bodies and the contact itself. It was assumed that there is no air in the gap between the bodies. The dependence of the electrical contact conductance on the contact pressure is calculated as well as voltage and current density distributions in the contact bodies. It is determined that the multi-asperity contact mode, adequate to real roughness, is achieved at pressures higher than 3MPa, while results within the single contact spot are

Fanconi anemia (FA) binding protein FAAP20 stabilizes FA complementation group A (FANCA) and participates in interstrand cross-link repair.

Science.gov (United States)

Leung, Justin Wai Chung; Wang, Yucai; Fong, Ka Wing; Huen, Michael Shing Yan; Li, Lei; Chen, Junjie

2012-03-20

The Fanconi anemia (FA) pathway participates in interstrand cross-link (ICL) repair and the maintenance of genomic stability. The FA core complex consists of eight FA proteins and two Fanconi anemia-associated proteins (FAAP24 and FAAP100). The FA core complex has ubiquitin ligase activity responsible for monoubiquitination of the FANCI-FANCD2 (ID) complex, which in turn initiates a cascade of biochemical events that allow processing and removal of cross-linked DNA and thereby promotes cell survival following DNA damage. Here, we report the identification of a unique component of the FA core complex, namely, FAAP20, which contains a RAD18-like ubiquitin-binding zinc-finger domain. Our data suggest that FAAP20 promotes the functional integrity of the FA core complex via its direct interaction with the FA gene product, FANCA. Indeed, somatic knockout cells devoid of FAAP20 displayed the hallmarks of FA cells, including hypersensitivity to DNA cross-linking agents, chromosome aberrations, and reduced FANCD2 monoubiquitination. Taking these data together, our study indicates that FAAP20 is an important player involved in the FA pathway.

Microstructure and wear behaviors of WC–12%Co coating deposited on ductile iron by electric contact surface strengthening

International Nuclear Information System (INIS)

Qi, Xiaoben; Zhu, Shigen; Ding, Hao; Zhu, Zhengkun; Han, Zhibing

2013-01-01

WC–12%Co powders deposited on ductile iron by electric contact strengthening were studied. This technology was based on the application of the contact resistance heating between the electrode and work piece to form a wear resistant layer on ductile iron. The microstructure, microhardness distribution, phase transformation and wear behaviors of the coating were investigated using optical microscope, scanning electron microscope, Vickers hardness (HV 0.5 ), X-ray diffraction, rolling contact wear tests. The results showed that the WC–12%Co coating by electric contact strengthening was metallurgically bonded to the ductile iron. Additionally, the effect of experimental parameters on microhardness and wear resistance of coatings were studied using orthogonal experiment. The results showed that compared with (A) electric current and (B) rotating speed, (C) contact force displays the most significant effect on microhardness and wear resistance of coatings. The coatings produced at A = 19 kA, B = 0.3 r/min and C = 700 N possessed highest microhardness of 1073 HV 0.5 and wear resistance.

Is there a relationship between hypoxia, contact resistance, and intercellular communication

International Nuclear Information System (INIS)

Dertinger, H.; Guichard, M.; Malaise, E.P.

1983-01-01

This investigation addresses the shape of radiation survival curves of cells cultures as multicell spheroids. It is shown that spheroids of cells capable of intercellular communication by gap-junctions display survival curves lacking a radioresistant fraction of hypoxic cells. Compared to the corresponding monolayers, these spheriod survival curves exhibit a uniform increase in radioresistance due to the ''contact effect''. In contrast, biphasic survival curves indicative of hypoxic cells are obtained with non-communicating spheroids, however, without indication of a contact effect. Evidence is presented that this relationship between intercellular communication, hypoxia, and contact effect may possibly also hold for survival curves of solid tumors. (orig.)

Time-temperature influence on the corrosion resistance of Ni-Cr-Nb superalloys in contact with Na2SO4-V2O5 molten mixtures

International Nuclear Information System (INIS)

Otero, E.; Pardo, A.; Hernaez, J.; Hierro, P.

1990-01-01

Corrosion rate data obtained by the polarization resistance method in nickel-base superalloys in contact with Na 2 SO 4 -V 2 O 5 molten mixtures are presented. The instrumental technique is also described. Time-temperature influence on the corrosion kinetics in the described conditions is discussed (Author)

Current contact device for a superconducting magnet coil

International Nuclear Information System (INIS)

Hieronymus, H.

1987-01-01

The invention concerns a current supply device for a superconducting magnet coil to be shortcircuited, with a separating device per coil end, which contains a fixed cooled contact and a moving contact connected to a power supply device and a mechanical actuating device for closing and opening the contacts. When closing the heated contact on to the cooled contact, relatively large quantities of heat can be transferred to the cooled contact and therefore to the connected superconducting coil end and can cause normal conduction there. The invention therefore provides that the mass ratio of the cooled contact to the moving contact is at least 5:1, preferably at least 10:1, and that the cooled contact part is provided, at the end away from the contact area, with means for increasing the area, for example cooling fins and is connected to the coil end has a thermal resistance between the contact area and the coil end of at least 0.2 k/W, preferably at least 0.5 k/W per 1000 A of current to be transmitted. (orig.) [de

Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

NARCIS (Netherlands)

Farmanbar Gelepordsari, M.; Brocks, G.

2016-01-01

High contact resistances have blocked the progress of devices based on MX2 (M = Mo, W; X = S, Se, Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. It is shown that i) one can remove the

Chemosensitivity of primary human fibroblasts with defective unhooking of DNA interstrand cross-links

International Nuclear Information System (INIS)

Clingen, Peter H.; Arlett, Colin F.; Hartley, John A.; Parris, Christopher N.

2007-01-01

Xeroderma pigmentosum (XP) is characterised by defects in nucleotide excision repair, ultraviolet (UV) radiation sensitivity and increased skin carcinoma. Compared to other complementation groups, XP-F patients show relatively mild cutaneous symptoms. DNA interstrand cross-linking agents are a highly cytotoxic class of DNA damage induced by common cancer chemotherapeutics such as cisplatin and nitrogen mustards. Although the XPF-ERCC1 structure-specific endonuclease is required for the repair of ICLs cellular sensitivity of primary human XP-F cells has not been established. In clonogenic survival assays, primary fibroblasts from XP-F patients were moderately sensitive to both UVC and HN2 compared to normal cells (2- to 3-fold and 3- to 5-fold, respectively). XP-A fibroblasts were considerably more sensitive to UVC (10- to 12-fold) but not sensitive to HN2. The sensitivity of XP-F fibroblasts to HN2 correlated with the defective incision or 'unhooking' step of ICL repair. Using the comet assay, XP-F cells exhibited only 20% residual unhooking activity over 24 h. Over the same time, normal and XP-A cells unhooked greater than 95% and 62% of ICLs, respectively. After HN2 treatment, ICL-associated DNA double-strand breaks (DSBs) are detected by pulse field gel electrophoresis in dividing cells. Induction and repair of DNA DSBs was normal in XP-F fibroblasts. These findings demonstrate that in primary human fibroblasts, XPF is required for the unhooking of ICLs and not for the induction or repair of ICL-associated DNA DSBs induced by HN2. In terms of cancer chemotherapy, people with mild DNA repair defects affecting ICL repair may be more prevalent in the general population than expected. Since cellular sensitivity of primary human fibroblasts usually reflects clinical sensitivity such patients with cancer would be at risk of increased toxicity

Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Directory of Open Access Journals (Sweden)

Wojciech Macherzynski

2016-01-01

Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

A novel design of submicron thin film point contacts

International Nuclear Information System (INIS)

Koch, H.

1986-01-01

A thin film point contact design applicable to SIS-, SNS-, and microbridge-type Josephson junctions is presented, which offers potentially advanced junction characteristics (low capacitance, low stray inductance, increased quasi-particle resistance). The design philosophy is based on the fact that a point contact results if two planes having a common symmetry axis but oriented perpendicular to each other are brought into contact with each other. For the case of thin films, instead of two-dimensional planes, the cross section of the resulting ''point''-contact is defined by the thicknesses of the two thin films. Film thicknesses can be controlled much more precisely than lateral dimensions created by lithography. Hence, submicron junction geometries can be achieved using only conventional fabrication techniques. Following this idea, Josephson weak links of the ultrashort microbridge-type have been fabricated by an all-Nb technique having a 0.3-μm X 0.2-μm cross section with a R /SUB q/ I /SUB c/ product (R /SUB q/ = quasiparticle resistance, I /SUB c/ = critical current) of more than 20 mV

Physical mechanisms related to the degradation of LPCVD tungsten contacts at elevated temperatures

International Nuclear Information System (INIS)

Shenai, K.; Lewis, N.; Smith, G.A.; McConnell, M.D.; Burrell, M.

1990-01-01

The thermal stability of LPCVD (low pressure chemical vapor deposition) tungsten contacts to n-type silicon is studied at elevated temperatures in excess of 650 degrees C. The process variants studied include silicon doping, tungsten thickness, and post tungsten deposition dielectric stress temperatures. Detailed measurements of Kelvin contact resistance were made at room temperature as well as at elevated temperatures up to 165 degrees C. The tungsten contact resistance degradation at elevated stress temperatures is correlated with worm hole formation in silicon and the formation and diffusion of tungsten silicide. Extensive analytical measurements were used to characterize the material transformation at elevated stress temperatures to understand the physical mechanisms causing contact degradation

Dual ohmic contact to N- and P-type silicon carbide

Science.gov (United States)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

A noise-resistant ADSA-PH algorithm for superhydrophobic surface’s static contact angle evaluation

OpenAIRE

Z. N. Xu

2017-01-01

The blur around the contact points significantly decreases the evaluated static contact angle for superhydrophobic surface which is clearly presented in the paper. To improve the accuracy in the evaluated static contact angle for superhydrophobic surface, an accurate static contact angle algorithm, namely ADSA-PH (axisymmetric drop shape analysis-profile and height), is proposed. It discards the extracted drop edge points close to the contact points and makes use of the residual points and th...

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

International Nuclear Information System (INIS)

Kehagias, N; Reboud, V; Chansin, G; Zelsmann, M; Jeppesen, C; Schuster, C; Kubenz, M; Reuther, F; Gruetzner, G; Torres, C M Sotomayor

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three-dimensional patterning. Three-dimensional woodpile-like structures were successfully fabricated with this new technique

Perspectives on setting limits for RF contact currents: a commentary.

Science.gov (United States)

Tell, Richard A; Tell, Christopher A

2018-01-15

Limits for exposure to radiofrequency (RF) contact currents are specified in the two dominant RF safety standards and guidelines developed by the Institute of Electrical and Electronics Engineers (IEEE) and the International Commission on Non-Ionizing Radiation Protection (ICNIRP). These limits are intended to prevent RF burns when contacting RF energized objects caused by high local tissue current densities. We explain what contact currents are and review some history of the relevant limits with an emphasis on so-called "touch" contacts, i.e., contact between a person and a contact current source during touch via a very small contact area. Contact current limits were originally set on the basis of controlling the specific absorption rate resulting from the current flowing through regions of small conductive cross section within the body, such as the wrist or ankle. More recently, contact currents have been based on thresholds of perceived heating. In the latest standard from the IEEE developed for NATO, contact currents have been based on two research studies in which thresholds for perception of thermal warmth or thermal pain have been measured. Importantly, these studies maximized conductive contact between the subject and the contact current source. This factor was found to dominate the response to heating wherein high resistance contact, such as from dry skin, can result in local heating many times that from a highly conductive contact. Other factors such as electrode size and shape, frequency of the current and the physical force associated with contact are found to introduce uncertainty in threshold values when comparing data across multiple studies. Relying on studies in which the contact current is minimized for a given threshold does not result in conservative protection limits. Future efforts to develop limits on contact currents should include consideration of (1) the basis for the limits (perception, pain, tissue damage); (2) understanding of the

Elimination of Routine Contact Precautions for Endemic Methicillin-Resistant Staphylococcus aureus and Vancomycin-Resistant Enterococcus: A Retrospective Quasi-Experimental Study.

Science.gov (United States)

Martin, Elise M; Russell, Dana; Rubin, Zachary; Humphries, Romney; Grogan, Tristan R; Elashoff, David; Uslan, Daniel Z

2016-11-01

OBJECTIVE To evaluate the impact of discontinuation of contact precautions (CP) for methicillin-resistant Staphylococcus aureus (MRSA) and vancomycin-resistant Enterococcus (VRE) and expansion of chlorhexidine gluconate (CHG) use on the health system. DESIGN Retrospective, nonrandomized, observational, quasi-experimental study. SETTING Two California hospitals. PARTICIPANTS Inpatients. METHODS We compared hospital-wide laboratory-identified clinical culture rates (as a marker of healthcare-associated infections) 1 year before and after routine CP for endemic MRSA and VRE were discontinued and CHG bathing was expanded to all units. Culture data from patients and cost data on material utilization were collected. Nursing time spent donning personal protective equipment was assessed and quantified using time-driven activity-based costing. RESULTS Average positive culture rates before and after discontinuing CP were 0.40 and 0.32 cultures/100 admissions for MRSA (P=.09), and 0.48 and 0.40 cultures/100 admissions for VRE (P=.14). When combining isolation gown and CHG costs, the health system saved $643,776 in 1 year. Before the change, 28.5% intensive care unit and 19% medicine/surgery beds were on CP for MRSA/VRE. On the basis of average room entries and donning time, estimated nursing time spent donning personal protective equipment for MRSA/VRE before the change was 45,277 hours/year (estimated cost, $4.6 million). CONCLUSION Discontinuing routine CP for endemic MRSA and VRE did not result in increased rates of MRSA or VRE after 1 year. With cost savings on materials, decreased healthcare worker time, and no concomitant increase in possible infections, elimination of routine CP may add substantial value to inpatient care delivery. Infect Control Hosp Epidemiol 2016;1-8.

Control of back surface reflectance from aluminum alloyed contacts on silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Cudzinovic, M.; Sopori, B. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

A process for forming highly reflective aluminum back contacts with low contact resistance to silicon solar cells is described. By controlling the process conditions, it is possible to vary the silicon/aluminum interface from a specular to a diffuse reflector while maintaining a high interface reflectance. The specular interface is found to be a uniform silicon/aluminum alloy layer a few angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly distributed (111) pyramids produced by crystallographic out-diffusion of the bulk silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10{sup {minus}5} {Omega}-cm{sup 2}. The process for forming the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580{degrees}C), making it favorable for commercial solar cell fabrication.

Characterization of Deposited Platinum Contacts onto Discrete Graphene Flakes for Electrical Devices

KAUST Repository

Holguin Lerma, Jorge Alberto

2016-01-01

The electrical measurements confirm a 99.5% reduction in contact resistance after vacuum thermal annealing at 300 °C. Parallel to this, Raman characterization confirms the formation of a nanocrystalline carbon structure over the electrode. While this could suggest an enhancement of the electrical transport in the device, an additional thermal annealing step in air at 300 °C, promoted the oxidation and removal of the carbon shell and confirmed that the contact resistance remained the same. Overall this shows that the carbon shell along the electrode has no significant role in the contact resistance. Finally, the challenges based on topographical analysis of the deposited electrodes are discussed. Reduction of the electrode’s height down to one-third of the initial value, increased surface roughness, formation of voids along the electrodes and the onset of platinum nanoparticles near the area of deposition, represent a challenge for future work.

W and WSix Ohmic contacts on p- and n-type GaN

International Nuclear Information System (INIS)

Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

1999-01-01

W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

In the eye of the beholder: eye contact increases resistance to persuasion.

Science.gov (United States)

Chen, Frances S; Minson, Julia A; Schöne, Maren; Heinrichs, Markus

2013-11-01

Popular belief holds that eye contact increases the success of persuasive communication, and prior research suggests that speakers who direct their gaze more toward their listeners are perceived as more persuasive. In contrast, we demonstrate that more eye contact between the listener and speaker during persuasive communication predicts less attitude change in the direction advocated. In Study 1, participants freely watched videos of speakers expressing various views on controversial sociopolitical issues. Greater direct gaze at the speaker's eyes was associated with less attitude change in the direction advocated by the speaker. In Study 2, we instructed participants to look at either the eyes or the mouths of speakers presenting arguments counter to participants' own attitudes. Intentionally maintaining direct eye contact led to less persuasion than did gazing at the mouth. These findings suggest that efforts at increasing eye contact may be counterproductive across a variety of persuasion contexts.

Contacting graphene in a 200 mm wafer silicon technology environment

Science.gov (United States)

Lisker, Marco; Lukosius, Mindaugas; Kitzmann, Julia; Fraschke, Mirko; Wolansky, Dirk; Schulze, Sebastian; Lupina, Grzegorz; Mai, Andreas

2018-06-01

Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes. The first approach uses pure Ni contacts with a thickness of 200 nm. For the second attempt, Ni is used as the contact metal which substitutes the Ti compared to a standard contact hole filling process. Accordingly, the contact hole filling of this "stacked via" approach is Ni/TiN/W. We demonstrate that the second "stacked Via" is beneficial and shows contact resistances of a wafer scale process with values below 200 Ohm μm.

Ohmic contacts to semiconducting diamond

Science.gov (United States)

Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

1990-10-01

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

Contact engineering for nano-scale CMOS

KAUST Repository

Hussain, Muhammad Mustafa

2012-09-10

High performance computation with longer battery lifetime is an essential component in our today\\'s digital electronics oriented life. To achieve these goals, field effect transistors based complementary metal oxide semiconductor play the key role. One of the critical requirements of transistor structure and fabrication is efficient contact engineering. To catch up with high performance information processing, transistors are going through continuous scaling process. However, it also imposes new challenges to integrate good contact materials in a small area. This can be counterproductive as smaller area results in higher contact resistance thus reduced performance for the transistor itself. At the same time, discovery of new one or two-dimensional materials like nanowire, nanotube, or atomic crystal structure materials, introduces new set of challenges and opportunities. In this paper, we are reviewing them in a synchronized fashion: fundamentals of contact engineering, evolution into non-planar field effect transistors, opportunities and challenges with one and two-dimensional materials and a new opportunity of contact engineering from device architecture perspective. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current flow in a 3-terminal thin film contact with dissimilar materials and general geometric aspect ratios

International Nuclear Information System (INIS)

Zhang Peng; Hung, Derek M H; Lau, Y Y

2013-01-01

The current flow pattern, together with the contact resistance, is calculated analytically in a Cartesian 3-terminal thin film contact with dissimilar materials. The resistivities and the geometric dimensions in the individual contact members, as well as the terminal voltages, may assume arbitrary values. We show that the current flow patterns and the contact resistance may be conveniently decomposed into the even and odd solution. The even solution gives exclusively and totally the current flowing from the source to the gate. The odd solution gives exclusively and totally the current flowing from the source to the drain. Current crowding at the edges, and current partition in different regions are displayed. The analytic solutions are validated using a simulation code. The bounds on the variation of the contact resistance are given. This paper may be considered as the generalization of the transmission line model and the Kennedy-Murley model that were used extensively in the characterization of thin-film devices. For completeness, we include the general results for the cylindrical geometry, which are qualitatively similar to the even solution of the Cartesian geometry.

Low coupling loss core-strengthened Bi 2212\\/Ag Rutherford cables

CERN Document Server

Collings, E W; Scanlan, R M; Dietderich, D R; Motowidlo, L R

1999-01-01

In a comprehensive "vertically integrated" program multifilamentary (MF) high temperature superconducting (HTSC) Bi:2212/Ag strand was fabricated using the powder-in-tube process and heat treated in oxygen by a modified standard $9 procedure. The reaction-heat-treatment (HT) was adjusted to maximize critical current (density), I/sub c/ (J /sub c/), as measured in various magnetic fields, B. A series of Rutherford cables was designed, each of which included a $9 metallic (Nichrome-80) core for strengthening and reduction of coupling loss. Prior to cable winding a series of tests examined the possibility of strand "poisoning" by the core during HT. Small model Rutherford cables were wound, $9 and after HT were prepared for I/sub c/(B) measurement and calorimetric measurement of AC loss and hence interstrand contact resistance I/sub c/(B). It was deduced that, if in direct contact with the strand during HT, the core $9 material can degrade the I/sub c/ of the cable; but steps can be taken to eliminate this probl...

Analysis of Electrical Coupling Parameters in Superconducting Cables

CERN Document Server

Bottura, L; Rosso, C

2003-01-01

The analysis of current distribution and redistribution in superconducting cables requires the knowledge of the electric coupling among strands, and in particular the interstrand resistance and inductance values. In practice both parameters can have wide variations in cables commonly used such as Rutherford cables for accelerators or Cable-in-Conduits for fusion and SMES magnets. In this paper we describe a model of a multi-stage twisted cable with arbitrary geometry that can be used to study the range of interstrand resistances and inductances that is associated with variations of geometry. These variations can be due to cabling or compaction effects. To describe the variations from the nominal geometry we have adopted a cable model that resembles to the physical process of cabling and compaction. The inductance calculation part of the model is validated by comparison to semi-analytical results, showing excellent accuracy and execution speed.

Stability measurements on cored cables in normal and superfluid helium

International Nuclear Information System (INIS)

GHOSH, A.K.; SAMPSON, W.B.; KIM, S.W.; LEROY, D.; OBERLI, L.R.; WILSON, M.N.

1998-01-01

The relative stability of LHC type cables has been measured by the direct heating of one of the individual strands with a short duration current pulse. The minimum energy required to initiate a quench has been determined for a number of cables which have a central core to increase the effective inter-strand cross-over resistance. Experiments were performed in both normal helium at 4.4 K and superfluid at 1.9 K. Conductors in general are less stable at the lower temperature when measured at the same fraction of critical current. Results show that the cored-cables, even when partially filled with solder or with a porous-metal filler exhibit a relatively low stability at currents close to the critical current. It is speculated that the high inter-strand electrical and thermal resistance inherent in these cables may effect the stability at high currents

Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

Science.gov (United States)

Khanna, Rohit

In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride

High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

KAUST Repository

Yonkee, Benjamin P.; Young, Erin; DenBaars, Steven P; Speck, James S; Nakamura, Shuji

2017-01-01

Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

KAUST Repository

Yonkee, Benjamin P.

2017-10-31

Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

Materials, Strands, and Cables for Superconducting Accelerator Magnets. Final Report

Energy Technology Data Exchange (ETDEWEB)

Sumption, Mike D. [Ohio State University, Columbia, OH (United States); Collings, Edward W. [Ohio State University, Columbia, OH (United States)

2014-09-19

This report focuses on Materials, Strands and Cables for High Energy Physics Particle accelerators. In the materials area, work has included studies of basic reactions, diffusion, transformations, and phase assemblage of Nb₃Sn. These materials science aspects have been married to results, in the form of flux pinning, B_c2, B_irr, and transport J_c, with an emphasis on obtaining the needed J_c for HEP needs. Attention has also been paid to the “intermediate-temperature superconductor”, magnesium diboride emphasis being placed on (i) irreversibility field enhancement, (ii) critical current density and flux pinning, and (iii) connectivity. We also report on studies of Bi-2212. The second area of the program has been in the area of “Strands” in which, aside from the materials aspect of the conductor, its physical properties and their influence on performance have been studied. Much of this work has been in the area of magnetization estimation and flux jump calculation and control. One of the areas of this work was strand instabilities in high-performance Nb₃Sn conductors due to combined fields and currents. Additionally, we investigated quench and thermal propagation in YBCO coated conductors at low temperatures and high fields. The last section, “Cables”, focussed on interstrand contact resistance, ICR, it origins, control, and implications. Following on from earlier work in NbTi, the present work in Nb₃Sn has aimed to make ICR intermediate between the two extremes of too little contact (no current sharing) and too much (large and unacceptable magnetization and associated beam de-focussing). Interstrand contact and current sharing measurements are being made on YBCO based Roebel cables using transport current methods. Finally, quench was investigated for YBCO cables and the magnets wound from them, presently with a focus on 50 T solenoids for muon collider applications.

Fanconi anemia (FA) binding protein FAAP20 stabilizes FA complementation group A (FANCA) and participates in interstrand cross-link repair

Science.gov (United States)

Leung, Justin Wai Chung; Wang, Yucai; Fong, Ka Wing; Huen, Michael Shing Yan; Li, Lei; Chen, Junjie

2012-01-01

The Fanconi anemia (FA) pathway participates in interstrand cross-link (ICL) repair and the maintenance of genomic stability. The FA core complex consists of eight FA proteins and two Fanconi anemia-associated proteins (FAAP24 and FAAP100). The FA core complex has ubiquitin ligase activity responsible for monoubiquitination of the FANCI-FANCD2 (ID) complex, which in turn initiates a cascade of biochemical events that allow processing and removal of cross-linked DNA and thereby promotes cell survival following DNA damage. Here, we report the identification of a unique component of the FA core complex, namely, FAAP20, which contains a RAD18-like ubiquitin-binding zinc-finger domain. Our data suggest that FAAP20 promotes the functional integrity of the FA core complex via its direct interaction with the FA gene product, FANCA. Indeed, somatic knockout cells devoid of FAAP20 displayed the hallmarks of FA cells, including hypersensitivity to DNA cross-linking agents, chromosome aberrations, and reduced FANCD2 monoubiquitination. Taking these data together, our study indicates that FAAP20 is an important player involved in the FA pathway. PMID:22396592

Prescribing prophylactic antibiotics to users of therapeutic contact lenses.

Science.gov (United States)

Colomé-Campos, J; Quevedo-Junyent, L; Godoy-Barreda, N; Martínez-Salcedo, I; Romero-Aroca, P

2013-03-01

To describe the benefits and optimum use of prophylactic antibiotics in users of therapeutic contact lenses (TCL). A microbiological study was carried out on samples from 33 patients who continuously wore TCL. The resistance to antibiotics of bacteria isolated in our health region was also reviewed. An assessment was also made on whether there were microorganisms of a higher pathogenic potential in TCL than conventional contact lenses, as reported in the literature. No bacteria were isolated from 17 (52%) of the 33 lenses studied. From the 16 (48%) remaining lenses, coagulase negative Staphylococci were isolated from 10 (62%), Propionibacterium acnes from 4 (25%), and Corynebacterium from 2 (13%). The high number of negative cultures and the presence of saprophytic bacteria indicate that prophylactic antibiotic treatment is not precise. The most frequent pathogenic bacteria found in contact lenses are strongly resistant to the current commercially available antibiotics. Copyright © 2012 Sociedad Española de Oftalmología. Published by Elsevier Espana. All rights reserved.

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A Germanium Back Contact Type Thermophotovoltaic Cell

International Nuclear Information System (INIS)

Nagashima, Tomonori; Okumura, Kenichi; Yamaguchi, Masafumi

2007-01-01

A Ge back contact type photovoltaic cell has been proposed to reduce resistance loss for high current densities in thermophotovoltaic systems. The back contact structure requires less surface recombination velocities than conventional structures with front grid contacts. A SiO2/SiNx double anti-reflection coating including a high refractive index SiNx layer was studied. The SiNx layer has an enough passivation effect to obtain high efficiency. The quantum efficiency of the Ge cell was around 0.8 in the 800-1600 nm wavelength range. The conversion efficiency for infrared lights was estimated at 18% for a blackbody surface and 25% for a selective emitter by using the quantum efficiency and a simulation analysis

Ion-Induced Surface Modification of Magnetically Operated Contacts

Directory of Open Access Journals (Sweden)

Karen Arushanov

2012-02-01

Full Text Available A study has been made of permalloy (iron-nickel contacts of reed switches before and after ion-induced surface modification using atomic force and optical microscopy, Auger electron and X-ray photoelectron spectroscopy. It has been found that the formation of surface nitride layers enhances corrosion and erosion resistance of contacts. We proposed to produce such layers directly into sealed reed switches by means of pulsing glow-discharge nitrogen plasma.

The effect of contact precautions on healthcare worker activity in acute care hospitals.

Science.gov (United States)

Morgan, Daniel J; Pineles, Lisa; Shardell, Michelle; Graham, Margaret M; Mohammadi, Shahrzad; Forrest, Graeme N; Reisinger, Heather S; Schweizer, Marin L; Perencevich, Eli N

2013-01-01

Contact precautions are a cornerstone of infection prevention but have also been associated with less healthcare worker (HCW) contact and adverse events. We studied how contact precautions modified HCW behavior in 4 acute care facilities. Prospective cohort study. Four acute care facilities in the United States performing active surveillance for methicillin-resistant Staphylococcus aureus. Trained observers performed "secret shopper" monitoring of HCW activities during routine care, using a standardized collection tool and fixed 1-hour observation periods. A total of 7,743 HCW visits were observed over 1,989 hours. Patients on contact precautions had 36.4% fewer hourly HCW visits than patients not on contact precautions (2.78 vs 4.37 visits per hour; [Formula: see text]) as well as 17.7% less direct patient contact time with HCWs (13.98 vs 16.98 minutes per hour; [Formula: see text]). Patients on contact precautions tended to have fewer visitors (23.6% fewer; [Formula: see text]). HCWs were more likely to perform hand hygiene on exiting the room of a patient on contact precautions (63.2% vs 47.4% in rooms of patients not on contact precautions; [Formula: see text]). Contact precautions were found to be associated with activities likely to reduce transmission of resistant pathogens, such as fewer visits and better hand hygiene at exit, while exposing patients on contact precautions to less HCW contact, less visitor contact, and potentially other unintended outcomes.

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

Science.gov (United States)

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

2015-07-28

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

Science.gov (United States)

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Time domain contact model for tyre/road interaction including nonlinear contact stiffness due to small-scale roughness

Science.gov (United States)

Andersson, P. B. U.; Kropp, W.

2008-11-01

Rolling resistance, traction, wear, excitation of vibrations, and noise generation are all attributes to consider in optimisation of the interaction between automotive tyres and wearing courses of roads. The key to understand and describe the interaction is to include a wide range of length scales in the description of the contact geometry. This means including scales on the order of micrometres that have been neglected in previous tyre/road interaction models. A time domain contact model for the tyre/road interaction that includes interfacial details is presented. The contact geometry is discretised into multiple elements forming pairs of matching points. The dynamic response of the tyre is calculated by convolving the contact forces with pre-calculated Green's functions. The smaller-length scales are included by using constitutive interfacial relations, i.e. by using nonlinear contact springs, for each pair of contact elements. The method is presented for normal (out-of-plane) contact and a method for assessing the stiffness of the nonlinear springs based on detailed geometry and elastic data of the tread is suggested. The governing equations of the nonlinear contact problem are solved with the Newton-Raphson iterative scheme. Relations between force, indentation, and contact stiffness are calculated for a single tread block in contact with a road surface. The calculated results have the same character as results from measurements found in literature. Comparison to traditional contact formulations shows that the effect of the small-scale roughness is large; the contact stiffness is only up to half of the stiffness that would result if contact is made over the whole element directly to the bulk of the tread. It is concluded that the suggested contact formulation is a suitable model to include more details of the contact interface. Further, the presented result for the tread block in contact with the road is a suitable input for a global tyre/road interaction model

Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

Science.gov (United States)

Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

2017-08-23

We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

Evaluation of surface characteristics under fretting of electrical contacts: Removal behaviour of hot dipped tin coating

International Nuclear Information System (INIS)

Park, Young Woo; Ramesh Bapu, G.N.K.; Lee, Kang Yong

2009-01-01

The fretting corrosion behaviour of hot dipped tin coating is investigated at low fretting cycles at ±25 μm displacement amplitude, 0.5N normal load, 3 Hz frequency, 45-50% relative humidity, and 25 ± 1 deg. C temperature. The typical characteristics of the change in contact resistance with fretting cycles are explained. The fretted surface is examined using laser scanning microscope, scanning electron microscope and energy dispersive X-ray analysis to assess the surface profile, extent of fretting damage, extent of oxidation and elemental distribution across the contact zone. The interdependence of extent of wear and oxidation increases the complexity of the fretting corrosion behaviour of tin coating. The variation of contact resistance clearly revealed the fretting of tin coating from 50 to 1200 cycles and the fretting of the substrate above 1200 cycles. The observed low and stable contact resistance region and the fluctuating resistance region at various fretting cycles are explained and substantiated with Scanning electron microscopy (SEM), laser scanning microscope (LSM) and energy dispersive analysis of X-rays (EDAX) analysis results of the fretted surface.

The study of sliding contact in railgun with metal armature

International Nuclear Information System (INIS)

Kondratenko, A.K.; Bykov, M.A.; Schastnykh, B.S.; Glinov, A.P.; Poltanov, A.E.

1997-01-01

An experimental technique for the study of the current distribution in the rails and a moving metal armature is developed. The work was carried out on a special experimental railgun with a capacitor power supply. The set of small dB/dt probes as well as wire contact probes were arranged in close vicinity of the rail and armature contact surface. For interpretation of dB/dt measurements the computation technique and program of restoration of current density distribution along the armature was developed. The size and the location of the current concentration zone in the contact area are obtained for several combinations of rail and armature materials; bronze and copper rails, Al and Ti alloy armature. A stationary armature tests with resistive stainless steel and graphite layers were also made to estimate the influence of the layer material resistivity on the current distribution

Low resistivity contact to iron-pnictide superconductors

Science.gov (United States)

Tanatar, Makariy; Prozorov, Ruslan; Ni, Ni; Bud& #x27; ko, Sergey; Canfield, Paul

2013-05-28

Method of making a low resistivity electrical connection between an electrical conductor and an iron pnictide superconductor involves connecting the electrical conductor and superconductor using a tin or tin-based material therebetween, such as using a tin or tin-based solder. The superconductor can be based on doped AFe.sub.2As.sub.2, where A can be Ca, Sr, Ba, Eu or combinations thereof for purposes of illustration only.

Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

International Nuclear Information System (INIS)

Srinivasan, G.; Bain, M.F.; Bhattacharyya, S.; Baine, P.; Armstrong, B.M.; Gamble, H.S.; McNeill, D.W.

2004-01-01

Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si 1- x Ge x , with 0 ≤x ≤ 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi 2 and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance ρ c values 3 x 10 -7 ohm cm 2 and 6 x 10 -7 ohm cm 2 obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in ρ c for both dopant types. The boron doped SiGe exhibits a reduction in ρ c from 3 x 10 -7 to 5 x 10 -8 ohm cm 2 as Ge fraction is increased from 0 to 0.3. The reduction in ρ c has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of ρ c to Ge fraction with a lowest value in this work of 3 x 10 -7 ohm cm 2 for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone

Low-Thermal-Resistance Baseplate Mounting

Science.gov (United States)

Perreault, W. T.

1984-01-01

Low-thermal-resistance mounting achieved by preloading baseplate to slight convexity with screws threaded through beam. As mounting bolts around edge of base-place tightened, baseplate and cold plate contact first in center, with region of intimate contact spreading outward as bolts tightened.

Contact materials for nanowire devices and nanoelectromechanical switches

KAUST Repository

Hussain, Muhammad Mustafa

2011-02-01

The impact of contact materials on the performance of nanostructured devices is expected to be signifi cant. This is especially true since size scaling can increase the contact resistance and induce many unseen phenomenon and reactions that greatly impact device performance. Nanowire and nanoelectromechanical switches are two emerging nanoelectronic devices. Nanowires provide a unique opportunity to control the property of a material at an ultra-scaled dimension, whereas a nanoelectromechanical switch presents zero power consumption in its off state, as it is physically detached from the sensor anode. In this article, we specifi cally discuss contact material issues related to nanowire devices and nanoelectromechanical switches.

Three-dimensional direct laser written graphitic electrical contacts to randomly distributed components

Science.gov (United States)

Dorin, Bryce; Parkinson, Patrick; Scully, Patricia

2018-04-01

The development of cost-effective electrical packaging for randomly distributed micro/nano-scale devices is a widely recognized challenge for fabrication technologies. Three-dimensional direct laser writing (DLW) has been proposed as a solution to this challenge, and has enabled the creation of rapid and low resistance graphitic wires within commercial polyimide substrates. In this work, we utilize the DLW technique to electrically contact three fully encapsulated and randomly positioned light-emitting diodes (LEDs) in a one-step process. The resolution of the contacts is in the order of 20 μ m, with an average circuit resistance of 29 ± 18 kΩ per LED contacted. The speed and simplicity of this technique is promising to meet the needs of future microelectronics and device packaging.

On the Formation and Properties of Interstrand DNA-DNA Cross-links Forged by Reaction of an Abasic Site With the Opposing Guanine Residue of 5′-CAp Sequences in Duplex DNA

Science.gov (United States)

Johnson, Kevin M.; Price, Nathan E.; Wang, Jin; Fekry, Mostafa I.; Dutta, Sanjay; Seiner, Derrick R.; Wang, Yinsheng; Gates, Kent S.

2014-01-01

We recently reported that the aldehyde residue of an abasic (Ap) site in duplex DNA can generate an interstrand cross-link via reaction with a guanine residue on the opposing strand. This finding is intriguing because the highly deleterious nature of interstrand cross-links suggests that even small amounts of Ap-derived cross-links could make a significant contribution to the biological consequences stemming from the generation of Ap sites in cellular DNA. Incubation of 21-bp duplexes containing a central 5′-CAp sequence under conditions of reductive amination (NaCNBH3, pH 5.2) generated much higher yields of cross-linked DNA than reported previously. At pH 7, in the absence of reducing agents, these Ap-containing duplexes also produced cross-linked duplexes that were readily detected on denaturing polyacrylamide gels. Cross-link formation was not highly sensitive to reaction conditions and, once formed, the cross-link was stable to a variety of work-up conditions. Results of multiple experiments including MALDI-TOF mass spectrometry, gel mobility, methoxyamine capping of the Ap aldehyde, inosine-for-guanine replacement, hydroxyl radical footprinting, and LCMS/MS were consistent with a cross-linking mechanism involving reversible reaction of the Ap aldehyde residue with the N2-amino group of the opposing guanine residue in 5′-CAp sequences to generate hemiaminal, imine, or cyclic hemiaminal cross-links (7-10) that were irreversibly converted under conditions of reductive amination (NaCNBH3/pH 5.2) to a stable amine linkage. Further support for the importance of the exocyclic N2-amino group in this reaction was provided by an experiment showing that installation of a 2-aminopurine-thymine base pair at the cross-linking site produced high yields (15-30%) of a cross-linked duplex at neutral pH, in the absence of NaCNBH3. PMID:23215239

Spin transport in ferromagnetically contacted carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Meyer, C.; Morgan, C.; Schneider, C.M. [Peter Gruenberg Institut, PGI-6, Forschungszentrum Juelich and JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany)

2011-11-15

We present magnetoresistance (MR) measurements on carbon nanotubes (CNTs) with different ferromagnetic leads. A sample with permalloy (Ni{sub 80}Fe{sub 20}) contacts shows the expected tunneling-type MR effect. Measurements on devices with CoPd contacts show a larger change of resistance with magnetic field. However, only minor loops are observed, which is explained with domain wall pinning. This is supported by magnetic force microscopy (MFM) measurements, which reveal a complicated bubble and stripe domain pattern. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts

International Nuclear Information System (INIS)

Patton, Steven T; Hu Jianjun; Slocik, Joseph M; Campbell, Angela; Naik, Rajesh R; Voevodin, Andrey A

2008-01-01

Reliability continues to be a critical issue in microelectromechanical systems (MEMS) switches. Failure mechanisms include high contact resistance (R), high adhesion, melting/shorting, and contact erosion. Little previous work has addressed the lubrication of MEMS switches. In this study, bimetallic nanoparticles (NPs) are synthesized using a biotemplated approach and deposited on Au MEMS switch contacts as a nanoparticle-based lubricant. Bimetallic nanoparticles are comprised of a metallic core (∼10 nm diameter gold nanoparticle) with smaller metallic nanoparticles (∼2-3 nm diameter Pd nanoparticles) populating the core surface. Adhesion and resistance (R) were measured during hot switching experiments at low (10 μA) and high (1 mA) current. The Au/Pd NP coated contacts led to reduced adhesion as compared to pure Au contacts with a compromise of slightly higher R. For switches held in the closed position at low current, R gradually decreased over tens of seconds due to increased van der Waals force and growth of the real area of contact with temporal effects being dominant over load effects. Contact behavior transitioned from 'Pd-like' to 'Au-like' during low current cycling experiments. Melting at high current resulted in rapid formation of large real contact area, low and stable R, and minimal effect of load on R. Durability at high current was excellent with no failure through 10 6 hot switching cycles. Improvement at high current is due to controlled nanoscale surface roughness that spreads current through multiple nanocontacts, which restricts the size of melting regions and causes termination of nanowire growth (prevents shorting) during contact opening. Based on these results, bimetallic NPs show excellent potential as surface modifiers/lubricants for MEMS switch contacts

Characterization of recessed Ohmic contacts to AlGaN/GaN

NARCIS (Netherlands)

Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

2015-01-01

In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to

Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

Science.gov (United States)

Shostachenko, S. A.; Porokhonko, Y. A.; Zakharchenko, R. V.; Burdykin, M. S.; Ryzhuk, R. V.; Kargin, N. I.; Kalinin, B. V.; Belov, A. A.; Vasiliev, A. N.

2017-12-01

This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

Contact mechanics: contact area and interfacial separation from small contact to full contact

International Nuclear Information System (INIS)

Yang, C; Persson, B N J

2008-01-01

We present a molecular dynamics study of the contact between a rigid solid with a randomly rough surface and an elastic block with a flat surface. The numerical calculations mainly focus on the contact area and the interfacial separation from small contact (low load) to full contact (high load). For a small load the contact area varies linearly with the load and the interfacial separation depends logarithmically on the load. For a high load the contact area approaches the nominal contact area (i.e. complete contact), and the interfacial separation approaches zero. The numerical results have been compared with analytical theory and experimental results. They are in good agreement with each other. The present findings may be very important for soft solids, e.g. rubber, or for very smooth surfaces, where complete contact can be reached at moderately high loads without plastic deformation of the solids

Rolling Resistance Measurement and Model Development

DEFF Research Database (Denmark)

Andersen, Lasse Grinderslev; Larsen, Jesper; Fraser, Elsje Sophia

2015-01-01

There is an increased focus worldwide on understanding and modeling rolling resistance because reducing the rolling resistance by just a few percent will lead to substantial energy savings. This paper reviews the state of the art of rolling resistance research, focusing on measuring techniques, s......, surface and texture modeling, contact models, tire models, and macro-modeling of rolling resistance...

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

International Nuclear Information System (INIS)

Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

2015-01-01

The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

Improvement of Ohmic contacts on Ga₂O₃ through use of ITO-interlayers

Energy Technology Data Exchange (ETDEWEB)

Carey, Patrick H. [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Yang, Jiancheng [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Ren, Fan [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Hays, David C. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Pearton, Stephen J. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Kuramata, Akito [Tamura Corporation, Sayama (Japan). Japan and Novel Crystal Technology, Inc.; Kravchenko, Ivan I. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

2017-10-03

In this work, the use of ITO interlayers between Ga₂O₃ and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga₂O₃ stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10^-5 Ω cm² were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga₂O₃ is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

International Nuclear Information System (INIS)

Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

2009-01-01

In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

Frictional Compliant Haptic Contact and Deformation of Soft Objects

Directory of Open Access Journals (Sweden)

Naci Zafer

2016-05-01

Full Text Available This paper is concerned with compliant haptic contact and deformation of soft objects. A human soft fingertip model is considered to act as the haptic interface and is brought into contact with and deforms a discrete surface. A nonlinear constitutive law is developed in predicting normal forces and, for the haptic display of surface texture, motions along the surface are also resisted at various rates by accounting for dynamic Lund-Grenoble (LuGre frictional forces. For the soft fingertip to apply forces over an area larger than a point, normal and frictional forces are distributed around the soft fingertip contact location on the deforming surface. The distribution is realized based on a kernel smoothing function and by a nonlinear spring-damper net around the contact point. Experiments conducted demonstrate the accuracy and effectiveness of our approach in real-time haptic rendering of a kidney surface. The resistive (interaction forces are applied at the user fingertip bone edge. A 3-DoF parallel robotic manipulator equipped with a constraint based controller is used for the implementation. By rendering forces both in lateral and normal directions, the designed haptic interface system allows the user to realistically feel both the geometrical and mechanical (nonlinear properties of the deforming kidney.

Constructal Optimization of Top Contact Metallization of a Photovoltaic Solar Cell

OpenAIRE

Bhakta, Aditya; Bandyopadhyay, Santanu

2010-01-01

A top contact metallization of a photovoltaic solar cell collects the current generated by incident solar radiation. Several power-loss mechanisms are associated with the current flow through the front contact grid. The design of the top metal contact grid is one of the most important areas of efficient photovoltaic solar cell design. In this paper, an approach based on the constructal theory is proposed to design the grid pattern in a photovoltaic solar cell, minimizing total resistive losse...

A Bridging Water Anchors the Tethered 5-(3-Aminopropyl)-2′-deoxyuridine Amine in the DNA Major Groove Proximate to the N+2 C·G Base Pair: Implications for Formation of Interstrand 5′-GNC-3′ Cross-Links by Nitrogen Mustards‡

Science.gov (United States)

Wang, Feng; Li, Feng; Ganguly, Manjori; Marky, Luis A.; Gold, Barry; Egli, Martin; Stone, Michael P.

2009-01-01

Site-specific insertion of 5-(3-aminopropyl)-2′-deoxyuridine (Z3dU) and 7-deaza-dG into the Dickerson-Drew dodecamers 5′-d(C1G2C3G4A5A6T7T8C9Z10C11G12)-3′ · 5′-d(C13G14C15G16A17A18T19T20-C21Z22C23G24)-3′ (named DDDZ10) and 5′-d(C1G2C3G4A5A6T7X8C9Z10C11G12)-3′ · 5′-d(C13G14C15G16A17A18-T19X20C21Z22C23G24)-3′ (named DDD2+Z10)(X = Z3dU; Z = 7-deaza-dG) suggests a mechanism underlying the formation of interstrand N+2 DNA cross-links by nitrogen mustards, e.g., melphalan and mechlorethamine. Analysis of the DDD2+Z10 duplex reveals that the tethered cations at base pairs A5 · X20 and X8 · A17 extend within the major groove in the 3′-direction, toward conserved Mg2+ binding sites located adjacent to N+2 base pairs C3 · Z22 and Z10 · C15. Bridging waters located between the tethered amines and either Z10 or Z22 O6 stabilize the tethered cations and allow interactions with the N + 2 base pairs without DNA bending. Incorporation of 7-deaza-dG into the DDD2+Z10 duplex weakens but does not eliminate electrostatic interactions between tethered amines and Z10 O6 and Z22 O6. The results suggest a mechanism by which tethered N7-dG aziridinium ions, the active species involved in formation of interstrand 5′-GNC-3′ cross-links by nitrogen mustards, modify the electrostatics of the major groove and position the aziridinium ions proximate to the major groove edge of the N+2 C · G base pair, facilitating interstrand cross-linking. PMID:18549246

Influences of Contact Pressure on the Performances of Polymer Electrolyte Fuel Cells

Directory of Open Access Journals (Sweden)

Prakash C. Ghosh

2013-01-01

Full Text Available Fuel cells face major challenges in sustaining the laboratory-scale performance during the scale up. The contact resistance mainly arises from the dimensional mismatch between gasket and gas diffusion layer during scale up, which may cause diminution in performance. In the present work, experiment as well as modelling is carried out for different combinations of clamping force and gasket thickness. The polarisation behaviours of PEFCs configured under different clamping torques and gasket thicknesses are analysed. The combination of 0.3 mm gasket and 0.3 mm GDL under 3 Nm and 5 Nm clamping forces offers 480 mΩ cm2 and 148 mΩ cm2 contact resistances, respectively. The configurations under 3 Nm and 5 Nm clamping torques with 0.2 mm thick gasket offer contact resistances as low as 23 mΩ cm2 and 11 mΩ cm2, respectively. The polarisation behaviour obtained from the experiment of such configurations is found to be in good agreement with the modelling results.

Laser-fired contact formation on metallized and passivated silicon wafers under short pulse durations

Science.gov (United States)

Raghavan, Ashwin S.

The objective of this work is to develop a comprehensive understanding of the physical processes governing laser-fired contact (LFC) formation under microsecond pulse durations. Primary emphasis is placed on understanding how processing parameters influence contact morphology, passivation layer quality, alloying of Al and Si, and contact resistance. In addition, the research seeks to develop a quantitative method to accurately predict the contact geometry, thermal cycles, heat and mass transfer phenomena, and the influence of contact pitch distance on substrate temperatures in order to improve the physical understanding of the underlying processes. Finally, the work seeks to predict how geometry for LFCs produced with microsecond pulses will influence fabrication and performance factors, such as the rear side contacting scheme, rear surface series resistance and effective rear surface recombination rates. The characterization of LFC cross-sections reveals that the use of microsecond pulse durations results in the formation of three-dimensional hemispherical or half-ellipsoidal contact geometries. The LFC is heavily alloyed with Al and Si and is composed of a two-phase Al-Si microstructure that grows from the Si wafer during resolidification. As a result of forming a large three-dimensional contact geometry, the total contact resistance is governed by the interfacial contact area between the LFC and the wafer rather than the planar contact area at the original Al-Si interface within an opening in the passivation layer. By forming three-dimensional LFCs, the total contact resistance is significantly reduced in comparison to that predicted for planar contacts. In addition, despite the high energy densities associated with microsecond pulse durations, the passivation layer is well preserved outside of the immediate contact region. Therefore, the use of microsecond pulse durations can be used to improve device performance by leading to lower total contact resistances

Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts

Energy Technology Data Exchange (ETDEWEB)

Patton, Steven T; Hu Jianjun [University of Dayton Research Institute, Dayton, OH 45469-0168 (United States); Slocik, Joseph M; Campbell, Angela; Naik, Rajesh R; Voevodin, Andrey A [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433-7750 (United States)], E-mail: steve.patton@wpafb.af.mil, E-mail: rajesh.naik@wpafb.af.mil

2008-10-08

Reliability continues to be a critical issue in microelectromechanical systems (MEMS) switches. Failure mechanisms include high contact resistance (R), high adhesion, melting/shorting, and contact erosion. Little previous work has addressed the lubrication of MEMS switches. In this study, bimetallic nanoparticles (NPs) are synthesized using a biotemplated approach and deposited on Au MEMS switch contacts as a nanoparticle-based lubricant. Bimetallic nanoparticles are comprised of a metallic core ({approx}10 nm diameter gold nanoparticle) with smaller metallic nanoparticles ({approx}2-3 nm diameter Pd nanoparticles) populating the core surface. Adhesion and resistance (R) were measured during hot switching experiments at low (10 {mu}A) and high (1 mA) current. The Au/Pd NP coated contacts led to reduced adhesion as compared to pure Au contacts with a compromise of slightly higher R. For switches held in the closed position at low current, R gradually decreased over tens of seconds due to increased van der Waals force and growth of the real area of contact with temporal effects being dominant over load effects. Contact behavior transitioned from 'Pd-like' to 'Au-like' during low current cycling experiments. Melting at high current resulted in rapid formation of large real contact area, low and stable R, and minimal effect of load on R. Durability at high current was excellent with no failure through 10{sup 6} hot switching cycles. Improvement at high current is due to controlled nanoscale surface roughness that spreads current through multiple nanocontacts, which restricts the size of melting regions and causes termination of nanowire growth (prevents shorting) during contact opening. Based on these results, bimetallic NPs show excellent potential as surface modifiers/lubricants for MEMS switch contacts.

Correlations between deformations, surface state and leak rate in metal to metal contact; Correlations entre deformations, etat de surface et debit de fuite au contact metal-metal

Energy Technology Data Exchange (ETDEWEB)

Armand, G; Lapujoulade, J; Paigne, J [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1963-07-01

The study of metal to metal contact from the stand-point of the leak rate has been carried on a copper ring located between two hard-steel flanges. The analysis of the results confirms the hysteresis phenomenon already seen. Some curves (leak rate versus force and leak rate versus true deformation) in semi-logarithmic coordinates are straight lines. Likewise some curves (electrical contact resistance versus force) in bi-logarithmic coordinates are straight lines. All these results can be understood by looking at the conductance introduced by the deformations of the micro-geometry of the surfaces in contact. Some tests carried out in rising the temperature confirm these hypothesis. (authors) [French] L'etude du contact metal-metal du point de vue debit de fuite a ete poursuivie en utilisant un anneau de cuivre place entre brides d'acier dur. L'analyse des resultats confirme le phenomene d'hysteresis deja constate, montre l'influence de l'etat de surface des brides et du joint. Certaines courbes (debit de fuite/force et debit de fuite/deformation rationnelle), en coordonnees semi-logarithmiques, sont des droites. De meme, certaines courbes (resistance de contact/force) en coordonnees bi-logarithmiques, sont des droites. Ces resultats s'interpretent en considerant la conductance produite par la deformation des microgeometries des surfaces en contact. Quelques essais d'elevation de temperature confirment ces resultats. (auteurs)

Feasible homopolar dynamo with sliding liquid-metal contacts

OpenAIRE

Priede, Jānis; Avalos-Zúñiga, Raúl

2013-01-01

We present a feasible homopolar dynamo design consisting of a flat, multi-arm spiral coil, which is placed above a fast-spinning metal ring and connected to the latter by sliding liquid-metal electrical contacts. Using a simple, analytically solvable axisymmetric model, we determine the optimal design of such a setup. For small contact resistance, the lowest magnetic Reynolds number, Rm~34.6, at which the dynamo can work, is attained at the optimal ratio of the outer and inner radii of the ri...

Intercellular transfer of P-glycoprotein from the drug resistant human bladder cancer cell line BIU-87 does not require cell-to-cell contact.

Science.gov (United States)

Zhou, Hui-liang; Zheng, Yong-jun; Cheng, Xiao-zhi; Lv, Yi-song; Gao, Rui; Mao, Hou-ping; Chen, Qin

2013-09-01

The efflux activity of transmembrane P-glycoprotein prevents various therapeutic drugs from reaching lethal concentrations in cancer cells, resulting in multidrug resistance. We investigated whether drug resistant bladder cancer cells could transfer functional P-glycoprotein to sensitive parental cells. Drug sensitive BIU-87 bladder cancer cells were co-cultured for 48 hours with BIU-87/ADM, a doxorubicin resistant derivative of the same cell line, in a Transwell® system that prevented cell-to-cell contact. The presence of P-glycoprotein in recipient cell membranes was established using fluorescein isothiocyanate, laser scanning confocal microscopy and Western blot. P-glycoprotein mRNA levels were compared between cell types. Rhodamine 123 efflux assay was done to confirm that P-glycoprotein was biologically active. The amount of P-glycoprotein protein in BIU-87 cells co-cultured with BIU-87/ADM was significantly higher than in BIU-87 cells (0.44 vs 0.25) and BIU-87/H33342 cells (0.44 vs 0.26, each p transfer. P-glycoprotein mRNA expression was significantly higher in BIU-87/ADM cells than in co-cultured BIU-87 cells (1.28 vs 0.30), BIU-87/H33342 (0.28) and BIU-87 cells (0.25, each p <0.001), ruling out a genetic mechanism. After 30 minutes of efflux, rhodamine 123 fluorescence intensity was significantly lower in BIU-87/ADM cells (5.55 vs 51.45, p = 0.004) and co-cultured BIU-87 cells than in BIU-87 cells (14.22 vs 51.45, p <0.001), indicating that P-glycoprotein was functional. Bladder cancer cells can acquire functional P-glycoprotein through a nongenetic mechanism that does not require direct cell contact. This mechanism is consistent with a microparticle mediated process. Copyright © 2013 American Urological Association Education and Research, Inc. Published by Elsevier Inc. All rights reserved.

Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

International Nuclear Information System (INIS)

Hwang, J. D.; Lin, C. C.; Chen, W. L.

2006-01-01

A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

The impact of drug resistance on the risk of tuberculosis infection and disease in child household contacts: a cross sectional study.

Science.gov (United States)

Golla, Vera; Snow, Kathryn; Mandalakas, Anna M; Schaaf, H Simon; Du Preez, Karen; Hesseling, Anneke C; Seddon, James A

2017-08-29

The relative fitness of organisms causing drug-susceptible (DS) and multidrug-resistant (MDR) tuberculosis (TB) is unclear. We compared the risk of TB infection and TB disease in young child household contacts of adults with confirmed DS-TB and MDR-TB. In this cross-sectional analysis we included data from two community-based contact cohort investigation studies conducted in parallel in Cape Town, South Africa. Children <5 years of age with household exposure to an infectious TB case were included between August 2008 to June 2011. Children completed investigation for TB infection (tuberculin skin test) and TB disease (symptom evaluation, chest radiograph, bacteriology) in both studies using standard approaches. The impact of MDR-TB exposure on each covariate of TB infection and TB disease was assessed using univariable and multivariable logistic regression. Of 538 children included, 312 had DS-TB and 226 had MDR-TB exposure. 107 children with DS-TB exposure had TB infection (34.3%) vs. 101 (44.7%) of children with MDR-TB exposure (adjusted Odds Ratio [aOR]: 2.05; 95% confidence interval [CI]: 1.34-3.12). A total of 15 (6.6%) MDR-TB vs. 27 (8.7%) DS-TB child contacts had TB disease at enrolment (aOR: 0.43; 95% CI: 0.19-0.97). Our results suggest a higher risk of TB infection in child contacts with household MDR-TB vs. DS-TB exposure, but a lower risk of TB disease. Although potentially affected by residual confounding or selection bias, our results are consistent with the hypothesis of impaired virulence in MDR-TB strains in this setting.

Improvement and evaluation of thermal, electrical, sealing and mechanical contacts, and their interface materials

Science.gov (United States)

Luo, Xiangcheng

Material contacts, including thermal, electrical, seating (fluid sealing and electromagnetic sealing) and mechanical (pressure) contacts, together with their interface materials, were, evaluated, and in some cases, improved beyond the state of the art. The evaluation involved the use of thermal, electrical and mechanical methods. For thermal contacts, this work evaluated and improved the heat transfer efficiency between two contacting components by developing various thermal interface pastes. Sodium silicate based thermal pastes (with boron nitride particles as the thermally conductive filler) as well as polyethylene glycol (PEG) based thermal pastes were developed and evaluated. The optimum volume fractions of BN in sodium silicate based pastes and PEG based pastes were 16% and 18% respectively. The contribution of Li+ ions to the thermal contact conductance in the PEG-based paste was confirmed. For electrical contacts, the relationship between the mechanical reliability and electrical reliability of solder/copper and silver-epoxy/copper joints was addressed. Mechanical pull-out testing was conducted on solder/copper and silver-epoxy/copper joints, while the contact electrical resistivity was measured. Cleansing of the copper surface was more effective for the reliability of silver-epoxy/copper joint than that of solder/copper joint. For sealing contacts, this work evaluated flexible graphite as an electromagnetic shielding gasket material. Flexible graphite was found to be at least comparable to conductive filled silicone (the state of the art) in terms of the shielding effectiveness. The conformability of flexible graphite with its mating metal surface under repeated compression was characterized by monitoring the contact electrical resistance, as the conformability is important to both electromagnetic scaling and fluid waling using flexible graphite. For mechanical contacts, this work focused on the correlation of the interface structure (such as elastic

Experimental investigation and characterization of micro resistance welding with an electro-thermal actuator

International Nuclear Information System (INIS)

Chang, Chun-Wei; Yeh, Cheng-Chi; Hsu Wensyang

2009-01-01

Resistance welding is a common scheme of assembly on the macro scale by pressing together two workpieces with current passing through them to generate joule heating at the contact region due to high contact resistance. However, micro assembly by resistance welding is seldom reported. Here, resistance welding with an electro-thermal microactuator to assemble micro Ni structures is experimentally investigated and characterized. The bent-beam electro-thermal microactuator is designed to provide the necessary displacements and pressing forces. The two-mask metal-based surface micromachining process is adopted to fabricate the micro Ni structures. The calibrated initial contact resistance is shown to decrease with increasing contact pressure. Furthermore, stronger welding strength is achieved at a smaller initial contact resistance, which indicates that a larger clamping force would enhance the welding strength as large as 3.09 MPa (74.4 µN) at a contact resistance of 2.7 Ω here. The input welding energy is also found to be a critical factor. In our tests, when welding energy is below the threshold limit of 0.05 J, the welding trials all fail. For the energy between 0.05 J and 1 J, there is a transition from a lower yield of 33.3% to a higher yield of 58.3%. At high welding energy, between 1 and 10 J, 100% yield is achieved. With the demonstration and characterization of micro resistance welding by the electro-thermal microactuator, the scheme proposed here would be helpful in the automation of micro assembly

Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

Science.gov (United States)

Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

2018-03-01

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

Development of a high hertz-stress contact for conventional batch production using a unique scribing technology

International Nuclear Information System (INIS)

Bhuiyan, M M I; Alamgir, T; Bhuiyan, M; Kajihara, M

2013-01-01

Gradually the electronic devices are getting more compact dimension with respect to the width and thickness. As a result, the contacts are becoming thinner and which leads the contact to be loose and unstable contact. In comercial stamping methode, connector tip diameter should be more than 300μm due to its size limitation. Consequently, the connector contact resistance is becoming higher due to weak contact force. To overcome this problem there were few more basic research using MEMS and Electro Fine Forming (EFF) technology to make high Hertz-Stress Contact (5μm) due to the limitation in the commercial stamping process and the result was in satisfactory level. However, since the MEMS and EFF fabrication is costly therefore, a new method is introduced in this paper using the commercial Phosphor Bronze stamping method to reduce the production cost. Moreover, scribing method is used to make tip on the contact. Accordingly, more compact fine pitch contact is successfully fabricated and tested with 5μm High Hertz Stress without using the MEMS and EFF technology. Hence the manufactured contact resistance becomes less than 20mΩ ±5mΩ

Electrical Resistivity Measurement of Petroleum Coke Powder by Means of Four-Probe Method

Science.gov (United States)

Rouget, G.; Majidi, B.; Picard, D.; Gauvin, G.; Ziegler, D.; Mashreghi, J.; Alamdari, H.

2017-10-01

Carbon anodes used in Hall-Héroult electrolysis cells are involved in both electrical and chemical processes of the cell. Electrical resistivity of anodes depends on electrical properties of its constituents, of which carbon coke aggregates are the most prevalent. Electrical resistivity of coke aggregates is usually characterized according to the ISO 10143 standardized test method, which consists of measuring the voltage drop in the bed of particles between two electrically conducing plungers through which the current is also applied. Estimation of the electrical resistivity of coke particles from the resistivity of particle bed is a challenging task and needs consideration of the contribution of the interparticle void fraction and the particle/particle contact resistances. In this work, the bed resistivity was normalized by subtracting the interparticle void fraction. Then, the contact size was obtained from discrete element method simulation and the contact resistance was calculated using Holm's theory. Finally, the resistivity of the coke particles was obtained from the bed resistivity.

Risk Factors for Nasal Colonization by Methicillin-Resistant Staphylococci in Healthy Humans in Professional Daily Contact with Companion Animals in Portugal.

Science.gov (United States)

Rodrigues, Ana Catarina; Belas, Adriana; Marques, Cátia; Cruz, Luís; Gama, Luís T; Pomba, Constança

2018-05-01

Methicillin-resistant staphylococci (MRS), namely Staphylococcus aureus (MRSA) and Staphylococcus pseudintermedius (MRSP), are opportunistic agents of great importance in human and veterinary medicine. The aims of this study were to investigate the frequency, persistence, and risk factors associated with nasal colonization by MRS in people in daily contact with animals in Portugal. Seventy-nine out of 129 (61.2%) participants were found to be colonized by, at least, one methicillin-resistant (MR) staphylococci species (MR Staphylococcus epidermidis [n = 68], MRSA [n = 19], MR Staphylococcus haemolyticus [n = 7], MRSP [n = 2], and other coagulase-negative staphylococci [n = 4]). Three lineages were identified among the MRSA isolates (n = 7): the major human healthcare clone in Portugal (ST22-t032-IV, n = 3), the livestock-associated MRSA (ST398-t108-V, n = 3), and the New York-/Japan-related clone (ST105-t002-II, n = 1). MRSP isolates belonged to the European clone ST71-II-III. We identified two risk factors for nasal colonization by MRS in healthy humans: (i) being a veterinary professional (veterinarian and veterinary nurse) (p < 0.0001, odds ratio [OR] = 6.369, 95% confidence interval [CI, 2.683-15.122]) and (ii) have contacted with one MRSA- or MRSP-positive animal (p = 0.0361, OR = 2.742, 95% CI [1.067-7.045]). The follow-up study revealed that the majority (85%) remain colonized. This study shows that MRS in veterinary clinical practice is a professional hazard and highlights the need to implement preventive measures to minimize spread.

Where buffalo and cattle meet: Modelling interspecific contact risk using cumulative resistant kernels

Science.gov (United States)

Zaneta Kaszta; Samuel A. Cushman; Claudio Sillero-Zubiri; Eleonore Wolff; Jorgelina Marino

2018-01-01

African buffalo the primary source of foot and mouth disease (FMD) infection for livestock in South Africa. Predicting the spatial drivers and patterns of buffalo–cattle contact risk is crucial for developing effective FMD mitigation strategies. Therefore, the goal of this study was to predict fine-scale, seasonal contact risk between cattle and buffaloes straying into...

Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

Science.gov (United States)

Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

2006-10-01

Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

Sources of series resistance in the Harwell solid state alpha detector

International Nuclear Information System (INIS)

Rawlings, K.J.

1985-12-01

The metal-semiconductor contacts to the Harwell solid state alpha detector have been characterized and the effect of the contact geometry has been assessed. To a reasonable approximation the latter gives rise to an emitter series resistance with an expected range of 20 +- 8 ohms. The contacts behave like parallel RC networks which become noticeably frequency dependent above ca. 100 kHz. Up to this frequency the emitter contact is likely to add 6 +- 4 ohms to the series resistance and the contribution from the base contact varies inversely with the square of the diode's diameter, being 5 +- 3 ohms for a diode with a diameter of 30 mm. (author)

Stainless steel in contact with food and bevarage

Directory of Open Access Journals (Sweden)

Sveto Cvetkovski

2012-12-01

Full Text Available Stainless steels are probably the most important materials in the food and beverage industries. The main reason for such broad implementation of stainless steel in contact with food are excellent properties which they possess such as corrosion resistance, resistance to high and low temperatures, very good mechanical and physical properties, aesthetic appeal, inertness of surface, durability, easy cleaning and recycling. Low thermal conductivity of these steels produces steeper temperature coefficient provoking an increased distortion, shrinkage and stresses compared with carbon steel.

Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

Science.gov (United States)

Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

2017-12-22

Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors

Directory of Open Access Journals (Sweden)

Yuchen Du

2014-09-01

Full Text Available Layered two-dimensional (2D semiconducting transition metal dichalcogenides (TMDs have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for future thin film technology due to their high mobility and the exhibiting bandgaps. While many TMD filed-effect transistors (FETs have been widely demonstrated along with a significant progress to clearly understand the device physics, large contact resistance at metal/semiconductor interface still remain a challenge. From 2D device research point of view, how to minimize the Schottky barrier effects on contacts thus reduce the contact resistance of metals on 2D materials is very critical for the further development of the field. Here, we present a review of contact research on molybdenum disulfide and other TMD FETs from the fundamental understanding of metal-semiconductor interfaces on 2D materials. A clear contact research strategy on 2D semiconducting materials is developed for future high-performance 2D FETs with aggressively scaled dimensions.

Contact fatigue of human enamel: Experiments, mechanisms and modeling.

Science.gov (United States)

Gao, S S; An, B B; Yahyazadehfar, M; Zhang, D; Arola, D D

2016-07-01

Cyclic contact between natural tooth structure and engineered ceramics is increasingly common. Fatigue of the enamel due to cyclic contact is rarely considered. The objectives of this investigation were to evaluate the fatigue behavior of human enamel by cyclic contact, and to assess the extent of damage over clinically relevant conditions. Cyclic contact experiments were conducted using the crowns of caries-free molars obtained from young donors. The cuspal locations were polished flat and subjected to cyclic contact with a spherical indenter of alumina at 2Hz. The progression of damage was monitored through the evolution in contact displacement, changes in the contact hysteresis and characteristics of the fracture pattern. The contact fatigue life diagram exhibited a decrease in cycles to failure with increasing cyclic load magnitude. Two distinct trends were identified, which corresponded to the development and propagation of a combination of cylindrical and radial cracks. Under contact loads of less than 400N, enamel rod decussation resisted the growth of subsurface cracks. However, at greater loads the damage progressed rapidly and accelerated fatigue failure. Overall, cyclic contact between ceramic appliances and natural tooth structure causes fatigue of the enamel. The extent of damage is dependent on the magnitude of cyclic stress and the ability of the decussation to arrest the fatigue damage. Copyright © 2016 Elsevier Ltd. All rights reserved.

Contact stiffness considerations when simulating tyre/road noise

Science.gov (United States)

Winroth, Julia; Kropp, Wolfgang; Hoever, Carsten; Höstmad, Patrik

2017-11-01

Tyre/road simulation tools that can capture tyre vibrations, rolling resistance and noise generation are useful for understanding the complex processes that are involved and thereby promoting further development and optimisation. The most detailed tyre/road contact models use a spatial discretisation of the contact and assume an interfacial stiffness to account for the small-scale roughness within the elements. This interfacial stiffness has been found to have a significant impact on the simulated noise emissions but no thorough investigations of this sensitivity have been conducted. Three mechanisms are thought to be involved: The horn effect, the modal composition of the vibrational field of the tyre and the contact forces exciting the tyre vibrations. This study used a numerical tyre/road noise simulation tool based on physical relations to investigate these aspects. The model includes a detailed time-domain contact model with linear or non-linear contact springs that accounts for the effect of local tread deformation on smaller length scales. Results confirm that an increase in contact spring stiffness causes a significant increase of the simulated tyre/road noise. This is primarily caused by a corresponding increase in the contact forces, resulting in larger vibrational amplitudes. The horn effect and the modal composition are relatively unaffected and have minor effects on the radiated noise. A more detailed non-linear contact spring formulation with lower stiffness at small indentations results in a reduced high-frequency content in the contact forces and the simulated noise.

Kinetics of chloride ion adsorption on stainless alloys by in situ contact electric resistance technique

International Nuclear Information System (INIS)

Marichev, V.A.

2008-01-01

As the primary reason for pitting of stainless alloys, chloride adsorption is not adequately studied, e.g. kinetic investigations of chloride adsorption are actually absent. We discuss and partly reconsider some well-known facts (e.g. halides order: Cl - > Br - > I - ), disputed points (chloride penetration in passive film), and still unknown aspects of chloride adsorption. For the first time, we report kinetic studies of chloride adsorption on stainless alloys by in situ contact electric resistance technique. The peak-like character of kinetic curves has been found for all studied stainless alloys, but not for pure iron and nickel. This has been considered as a sequence of the substantial charge transfer during chloride adsorption. Opposite to typical d metals, stainless materials are alloys of early and late transition metals having unfilled d-bands with increased number of d-electron vacancies. Such electronic structure is favorable for adsorption of electron donating adsorbates like halide ions. Experimental data of this work are more compatible with possibility of chloride penetration into the passive films on stainless alloys that also might involve a transformation of primary oxy-hydroxide films into oxy-chloride films

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

Science.gov (United States)

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-07-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Charge loss between contacts of CdZnTe pixel detectors

International Nuclear Information System (INIS)

Bolotnikov, A.E.; Cook, W.R.; Harrison, F.A.; Wong, A.-S.; Schindler, S.M.; Eichelberger, A.C.

1999-01-01

The surface of Cd 1-x Zn x Te (CZT) material has high resistivity but is not a perfect dielectric. Even a small surface conductivity can affect the electric field distribution, and therefore, the charge collection efficiency of a CZT pixel detector. The paper describes studies of this phenomenon for several contact configurations made on a single CZT detector. We have determined the maximum inter-contact separation at which the surface inter-pixel charge loss can be neglected. (author)

Degowning the controversies of contact precautions for methicillin-resistant Staphylococcus aureus: A review.

Science.gov (United States)

Kullar, Ravina; Vassallo, Angela; Turkel, Sarah; Chopra, Teena; Kaye, Keith S; Dhar, Sorabh

2016-01-01

Contact precautions (CPs) are recommended to prevent methicillin-resistant Staphylococcus aureus (MRSA) transmission in institutions. Rising doubts about CP effectiveness and recognition of unintended consequences for patients have raised questions about the benefit. The objective of this study was to evaluate the effectiveness and adverse outcomes associated with CPs for prevention of MRSA transmission. We searched PubMed, Embase, and the Cochrane Library for articles related to effectiveness and adverse outcomes of CPs in patients with MRSA. Criteria for inclusion included the following: articles conducted in the United States, articles performed in an acute care setting, articles that were not a case series or review, and those with standardized collection of data or inclusion of case and control groups. Results were summarized and examined for potential limitations. Recommendations were based on our findings. CPs reduced MRSA transmission in epidemic settings and in instances with high compliance, but a decrease in infection rates was not shown. Unintended consequences of CPs include decreased health care provider (HCP) time spent with patients, low HCP compliance, decreased perceptions of comfort from patients, and greater likelihood of patient complaints and negative psychologic implications. In endemic settings, there are few data to support routine use of CPs to control the spread of MRSA. Education should be performed in hospitals to improve patients' perception of care and understanding of CPs when implemented and HCPs' adherence to good hand hygiene and standard precautions practices. Published by Elsevier Inc.

Components of a Fanconi-like pathway control Pso2-independent DNA interstrand crosslink repair in yeast.

Directory of Open Access Journals (Sweden)

Thomas A Ward

Full Text Available Fanconi anemia (FA is a devastating genetic disease, associated with genomic instability and defects in DNA interstrand cross-link (ICL repair. The FA repair pathway is not thought to be conserved in budding yeast, and although the yeast Mph1 helicase is a putative homolog of human FANCM, yeast cells disrupted for MPH1 are not sensitive to ICLs. Here, we reveal a key role for Mph1 in ICL repair when the Pso2 exonuclease is inactivated. We find that the yeast FANCM ortholog Mph1 physically and functionally interacts with Mgm101, a protein previously implicated in mitochondrial DNA repair, and the MutSα mismatch repair factor (Msh2-Msh6. Co-disruption of MPH1, MGM101, MSH6, or MSH2 with PSO2 produces a lesion-specific increase in ICL sensitivity, the elevation of ICL-induced chromosomal rearrangements, and persistence of ICL-associated DNA double-strand breaks. We find that Mph1-Mgm101-MutSα directs the ICL-induced recruitment of Exo1 to chromatin, and we propose that Exo1 is an alternative 5'-3' exonuclease utilised for ICL repair in the absence of Pso2. Moreover, ICL-induced Rad51 chromatin loading is delayed when both Pso2 and components of the Mph1-Mgm101-MutSα and Exo1 pathway are inactivated, demonstrating that the homologous recombination stages of ICL repair are inhibited. Finally, the FANCJ- and FANCP-related factors Chl1 and Slx4, respectively, are also components of the genetic pathway controlled by Mph1-Mgm101-MutSα. Together this suggests that a prototypical FA-related ICL repair pathway operates in budding yeast, which acts redundantly with the pathway controlled by Pso2, and is required for the targeting of Exo1 to chromatin to execute ICL repair.

Acquisition of resistance to 1-(4-amino-2-methyl-5-pyrimidinyl) methyl-3-(2-chloroethyl)-3-nitrosourea hydrochloride in V79 cells through increased removal of O6-alkylguanine.

Science.gov (United States)

Satoh, M S; Huh, N H; Horie, Y; Thomale, J; Rajewsky, M F; Kuroki, T

1987-10-01

The molecular mechanism of acquisition of resistance to 1-(4-amino-2-methyl-5-pyrimidinyl)-methyl-3-(2-chloroethyl)-3-nitroso ure a hydrochloride (ACNU) was investigated using ACNU-resistant clones (ACNUr-1-4) isolated from the V79 cell line. The binding level of alkyl cyanate, a decomposition product of ACNU, to protein in ACNUr-1 cells was not less than that in the parental V79 cells, indicating that the acquired resistance was not due to a reduced intracellular concentration of ACNU. Because O6-chloroethylguanine, an intermediate in cytotoxic interstrand cross-link formation by ACNU, is known to be repaired by the same mechanism as O6-ethyldeoxyguanosine (O6-EtdGuo), we quantitated O6-EtdGuo by radioimmunoassay at various times after exposure of cells to 100 micrograms/ml N-ethyl-N-nitrosourea for 20 min. In V79 cells, elimination of O6-EtdGuo was negligible, but in all four resistant clones, 30 to 59% of the O6-EtdGuo was removed within 24 hr after exposure. This increased removal of O6-EtdGuo among the resistant clones was associated with the activity of O6-alkylguanine DNA alkyltransferase (O6-AGT) determined using cell extracts. The present results indicate that increased removal of O6-chloroethylguanine in ACNU-resistant clones by O6-AGT is mechanistically linked to the acquisition of resistance to ACNU.

Ag screen contacts to sintered YBa/sub 2/Cu/sub 3/O/sub x/ powder for rapid superconductor characterization

International Nuclear Information System (INIS)

Moreland, J.; Goodrich, L.F.

1989-01-01

The authors have developed a new method for making current contacts and voltage taps to YBa/sub 2/Cu/sub 3/O/sub x/ sintered pellets for rapid superconductor characterization. Ag wire screens are interleaved between calcined powder sections and then fired at 930 0 C to form a composite pellet for resistivity and critical current measurements. The Ag diffuses into the powder during the sintering process forming a proximity contact that is permeable to O/sub 2/. Contact surface resistivities (area-resistance product) range from 1 to 10μΩ-cm/sup 2/ at 77 K for the Ag-powder interface. In this configuration, current can be uniformly injected into the ends of the pellet through the bonded Ag screen electrodes. Also, Ag screen voltage contacts, which span a cross section of the pellet, may provide an ideal geometry for detecting voltage drops along the pellet, minimizing current transfer effects

Low resistivity molybdenum thin film towards the back contact of dye ...

Indian Academy of Sciences (India)

Back contact; molybdenum; DC sputtering; dye-sensitized solar cell. 1. Introduction ... Structure and operation mechanism of a DSSC. Figure 2. Mo layers were .... to a better efficiency. In this work, the Mo thin films obtained by implying different.

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

2016-07-25

Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

Metal Contacts to Gallium Arsenide.

Science.gov (United States)

Ren, Fan

1991-07-01

While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

Cotrimoxazole Resistant Chancroid

Directory of Open Access Journals (Sweden)

Kamlender Singh

1985-01-01

Full Text Available Four male young adults, after contact with prostitutes, developed clinically typical chancroid which was resistant to cotrimoxazole alone and also in combination with tetracycline. With chloramphenicol, the response was quick and complete with no untoward side effects.

Changing prevalence and resistance patterns in children with drug-resistant tuberculosis in Mumbai.

Science.gov (United States)

Shah, Ira; Shah, Forum

2017-05-01

The prevalence of drug-resistant (DR) tuberculosis (TB) in children is increasing. Although, in India, multi-drug-resistant (MDR) TB rates have been relatively stable, the number of children with pre-extensively drug-resistant and extensively drug-resistant (XDR) TB is increasing. To determine whether the prevalence of DR TB in children in Mumbai is changing and to study the evolving patterns of resistance. A retrospective study was undertaken in 1311 paediatric patients referred between April 2007 and March 2013 to the Paediatric TB clinic at B. J. Wadia Hospital for Children, Mumbai. Children were defined as having DR TB on the basis of drug susceptibility testing (DST) of Mycobacterium tuberculosis grown on culture of body fluids (in the case of extra pulmonary TB) or from gastric lavage/bronchi-alveolar lavage/sputum in patients with pulmonary TB or from DST of the contacts. The prevalence of DR TB was calculated and the type of DR was evaluated yearly and in the pre-2010 and post-2010 eras. The overall prevalence of DR TB was 86 (6.6%) with an increase from 23 (5.6%) patients pre-2010 to 63 (7%) post-2010 (P = 0.40). Nine (10.4%) patients were diagnosed on the basis of contact with a parent with DR TB. Overall fluoroquinolone resistance increased from 9 (39.1%) pre-2010 to 59 (93.7%) post-2010 (P = 0.0001): moxifloxacin resistance increased from 2 (8.7%) to 29 (46%) (P = 0.0018) and ofloxacin resistance increased from 7 (30.4%) to 30 (47.6%) (P = 0.14). Ethionamide resistance also increased from 6 (26.1%) to 31 (49.2%) (P = 0.04), aminoglycoside resistance was one (4.3%) pre-2010 and 12 (19%) post-2010 (P = 0.17) and resistance remained virtually the same for both amikacin [0 pre-2010 and 6 (9.5%) after 2010] and kanamycin [one (4.3%) pre- and 6 (9.5%) post-2010]. Of the first-line drugs, resistance remained the same for isoniazid [23 (100%) to 61 (96.8%)], rifampicin [22 (95.7%) to 51 (80.9%),P = 0.17], pyrazinamide [15 (65.2%) to

Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

Science.gov (United States)

Wang, Cong; Kim, Nam-Young

2012-02-07

Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

Charge loss between contacts of CdZnTe pixel detectors

CERN Document Server

Bolotnikov, A E; Harrison, F A; Wong, A S; Schindler, S M; Eichelberger, A C

1999-01-01

The surface of Cd sub 1 sub - sub x Zn sub x Te (CZT) material has high resistivity but is not a perfect dielectric. Even a small surface conductivity can affect the electric field distribution, and therefore, the charge collection efficiency of a CZT pixel detector. The paper describes studies of this phenomenon for several contact configurations made on a single CZT detector. We have determined the maximum inter-contact separation at which the surface inter-pixel charge loss can be neglected. (author)

Epitaxial Sb-doped SnO_2 and Sn-doped In_2O_3 transparent conducting oxide contacts on GaN-based light emitting diodes

International Nuclear Information System (INIS)

Tsai, Min-Ying; Bierwagen, Oliver; Speck, James S.

2016-01-01

We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO_2 (ATO) and (111)-oriented, cubic Sn-doped In_2O_3 (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO_D_o_m_a_i_n_1[‐ 211]|| ITO_D_o_m_a_i_n_2[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10"− "3 Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga_2O_3 interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10"−"4 Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO_2:Sb (ATO) and In_2O_3:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short wavelengths than ITO.

Aluminum–Titanium Alloy Back Contact Reducing Production Cost of Silicon Thin-Film Solar Cells

Directory of Open Access Journals (Sweden)

Hsin-Yu Wu

2016-11-01

Full Text Available In this study, metal films are fabricated by using an in-line reactive direct current magnetron sputtering system. The aluminum–titanium (AlTi back contacts are prepared by changing the pressure from 10 mTorr to 25 mTorr. The optical, electrical and structural properties of the metal back contacts are investigated. The solar cells with the AlTi had lower contact resistance than those with the silver (Ag back contact, resulting in a higher fill factor. The AlTi contact can achieve a solar cell conversion efficiency as high as that obtained from the Ag contact. These findings encourage the potential adoption of AlTi films as an alternative back contact to silver for silicon thin-film solar cells.

Exploring surface cleaning strategies in hospital to prevent contact transmission of methicillin-resistant Staphylococcus aureus.

Science.gov (United States)

Lei, Hao; Jones, Rachael M; Li, Yuguo

2017-01-18

Cleaning of environmental surfaces in hospitals is important for the control of methicillin-resistant Staphylococcus aureus (MRSA) and other hospital-acquired infections transmitted by the contact route. Guidance regarding the best approaches for cleaning, however, is limited. In this study, a mathematical model based on ordinary differential equations was constructed to study MRSA concentration dynamics on high-touch and low-touch surfaces, and on the hands and noses of two patients (in two hospitals rooms) and a health care worker in a hypothetical hospital environment. Two cleaning interventions - whole room cleaning and wipe cleaning of touched surfaces - were considered. The performance of the cleaning interventions was indicated by a reduction in MRSA on the nose of a susceptible patient, relative to no intervention. Whole room cleaning just before first patient care activities of the day was more effective than whole room cleaning at other times, but even with 100% efficiency, whole room cleaning only reduced the number of MRSA transmitted to the susceptible patient by 54%. Frequent wipe cleaning of touched surfaces was shown to be more effective that whole room cleaning because surfaces are rapidly re-contaminated with MRSA after cleaning. Wipe cleaning high-touch surfaces was more effective than wipe cleaning low-touch surfaces for the same frequency of cleaning. For low wipe cleaning frequency (≤3 times per hour), high-touch surfaces should be targeted, but for high wipe cleaning frequency (>3 times per hour), cleaning should target high- and low-touch surfaces in proportion to the surface touch frequency. This study reproduces the observations from a field study of room cleaning, which provides support for the validity of our findings. Daily whole room cleaning, even with 100% cleaning efficiency, provides limited reduction in the number of MRSA transmitted to susceptible patients via the contact route; and should be supplemented with frequent targeted

Direct contact thermoelectric generator (DCTEG): A concept for removing the contact resistance between thermoelectric modules and heat source

International Nuclear Information System (INIS)

Kim, Tae Young; Negash, Assmelash; Cho, Gyubaek

2017-01-01

Highlights: • A design concept of a direct contact thermoelectric generator (DCTEG) is proposed. • Power generation characteristics of the DCTEG on a diesel engine are examined. • Maximum power output of ∼45 W and conversion efficiency of ∼2.0% are obtained. • Effect of clearance on energy conversion of the DCTEG is numerically investigated. • A 132% increase in output power with a flush mounted configuration is obtained. - Abstract: This paper proposes the concept of a direct contact thermoelectric generator (DCTEG) to enhance the practicality and widen the application areas of thermoelectric generators (TEGs). In the DCTEG, one thermoelectric module (TEM) surface is directly exposed to a heat source, and the other surface is in direct contact with a coolant flow. The current direct-contact configuration is beneficial for system fabrication, maintenance, long-term reliability, and maximizing energy usage in cooperation with other energy systems because of its simple configuration and lack of interfaces between the TEMs and heat sources. In order to validate the proposed concept experimentally, a DCTEG was constructed by fabricating customized TEMs and exhaust gas and coolant channels with openings to mount the TEMs. A diesel engine served as a heat source by providing hot exhaust gas into the DCTEG, while the coolant (water–ethylene glycol mixture) was pumped into the coolant channels to remove heat. Based on the experimental results obtained under various engine operating conditions, the power generation of the DCTEG was characterized in the form of current–voltage and power–voltage curves. The maximum output power of 43 W and conversion efficiency of 2.0% were obtained under the highest engine load and rotation speed conditions. A series of numerical simulations was carried out to investigate the effect of the system configuration on the DCTEG power generation performance with the clearance between the TEM surfaces and exhaust gas

Thermoelectric voltage at a nanometer-scale heated tip point contact

Science.gov (United States)

Fletcher, Patrick C.; Lee, Byeonghee; King, William P.

2012-01-01

We report thermoelectric voltage measurements between the platinum-coated tip of a heated atomic force microscope (AFM) cantilever and a gold-coated substrate. The cantilevers have an integrated heater-thermometer element made from doped single crystal silicon, and a platinum tip. The voltage can be measured at the tip, independent from the cantilever heating. We used the thermocouple junction between the platinum tip and the gold substrate to measure thermoelectric voltage during heating. Experiments used either sample-side or tip-side heating, over the temperature range 25-275 °C. The tip-substrate contact is ˜4 nm in diameter and its average measured Seebeck coefficient is 3.4 μV K-1. The thermoelectric voltage is used to determine tip-substrate interface temperature when the substrate is either glass or quartz. When the non-dimensional cantilever heater temperature is 1, the tip-substrate interface temperature is 0.593 on glass and 0.125 on quartz. Thermal contact resistance between the tip and the substrate heavily influences the tip-substrate interface temperature. Measurements agree well with modeling when the tip-substrate interface contact resistance is 108 K W-1.

Thermoelectric voltage at a nanometer-scale heated tip point contact

International Nuclear Information System (INIS)

Fletcher, Patrick C; Lee, Byeonghee; King, William P

2012-01-01

We report thermoelectric voltage measurements between the platinum-coated tip of a heated atomic force microscope (AFM) cantilever and a gold-coated substrate. The cantilevers have an integrated heater–thermometer element made from doped single crystal silicon, and a platinum tip. The voltage can be measured at the tip, independent from the cantilever heating. We used the thermocouple junction between the platinum tip and the gold substrate to measure thermoelectric voltage during heating. Experiments used either sample-side or tip-side heating, over the temperature range 25–275 °C. The tip–substrate contact is ∼4 nm in diameter and its average measured Seebeck coefficient is 3.4 μV K −1 . The thermoelectric voltage is used to determine tip–substrate interface temperature when the substrate is either glass or quartz. When the non-dimensional cantilever heater temperature is 1, the tip–substrate interface temperature is 0.593 on glass and 0.125 on quartz. Thermal contact resistance between the tip and the substrate heavily influences the tip–substrate interface temperature. Measurements agree well with modeling when the tip–substrate interface contact resistance is 10 8 K W −1 . (paper)

Polymer-interaction driven diffusionof eyeshadow in soft contact lenses.

Science.gov (United States)

Tavazzi, Silvia; Rossi, Alessandra; Picarazzi, Sara; Ascagni, Miriam; Farris, Stefano; Borghesi, Alessandro

2017-10-01

Soft contact lenses used for the correction of ametropia are often made of hydrogel and silicone-hydrogel materials. Since they are placed directly on the surface of the eye and they are hydrated by tears, eye cosmetics can compromise the lens performance and, even worse, can be transported from an external environment to the ocular surface through the contact lens. The diffusion of the dye component of a purple eyeshadow in soft contact lenses of different materials is here evaluated. Diffusivity is found to be typically higher in silicone-hydrogels than in hydrogels. In hydrogels, diffusivity is greater in the case of lower oxygen transmissibility. Despite differences between materials, absorbed mass of dye is much larger (10-100 times) than the expected mass by simple hydration and swelling of the contact lens. The most contaminated materials are also resistant to cleaning solutions. The results indicate that, notwithstanding the complexity of contact lens networks, diffusion of dye is found to follow Fick's law and it is driven by polymer-dye interaction, which governs lens hydration and swelling. Copyright © 2017 British Contact Lens Association. Published by Elsevier Ltd. All rights reserved.

Mechanisms of current flow in metal-semiconductor ohmic contacts

International Nuclear Information System (INIS)

Blank, T. V.; Gol'dberg, Yu. A.

2007-01-01

Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

The role of titanium aluminide in n-gallium nitride ohmic contact technology

Science.gov (United States)

Pelto, Christopher M.

Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction

C. elegans ring finger protein RNF-113 is involved in interstrand DNA crosslink repair and interacts with a RAD51C homolog.

Directory of Open Access Journals (Sweden)

Hyojin Lee

Full Text Available The Fanconi anemia (FA pathway recognizes interstrand DNA crosslinks (ICLs and contributes to their conversion into double-strand DNA breaks, which can be repaired by homologous recombination. Seven orthologs of the 15 proteins associated with Fanconi anemia are functionally conserved in the model organism C. elegans. Here we report that RNF-113, a ubiquitin ligase, is required for RAD-51 focus formation after inducing ICLs in C. elegans. However, the formation of foci of RPA-1 or FCD-2/FANCD2 in the FA pathway was not affected by depletion of RNF-113. Nevertheless, the RPA-1 foci formed did not disappear with time in the depleted worms, implying serious defects in ICL repair. As a result, RNF-113 depletion increased embryonic lethality after ICL treatment in wild-type worms, but it did not increase the ICL-induced lethality of rfs-1/rad51C mutants. In addition, the persistence of RPA-1 foci was suppressed in doubly-deficient rnf-113;rfs-1 worms, suggesting that there is an epistatic interaction between the two genes. These results lead us to suggest that RNF-113 and RFS-1 interact to promote the displacement of RPA-1 by RAD-51 on single-stranded DNA derived from ICLs.

Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

KAUST Repository

Yang, Xinbo

2018-04-19

Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.

Direct measurements of inter-filament resistance in various multi-filamentary superconducting NbTi and Nb3Sn strands

NARCIS (Netherlands)

Zhou, Chao; Miyoshi, Y.; van Lanen, E.P.A.; Dhalle, Marc M.J.; Nijhuis, Arend

2012-01-01

For a proper characterization of multi-filamentary NbTi and Nb3Sn strands and a better understanding of their performance in short sample tests, as well as for increased understanding of inter-strand current redistribution in cabled conductors, a quantitative knowledge of the inter-filament

Advanced characterization of carrier profiles in germanium using micro-machined contact probes

DEFF Research Database (Denmark)

Clarysse, T.; Konttinen, M.; Parmentier, B.

2012-01-01

of new concepts based on micro machined, closely spaced contact probes (10 μm pitch). When using four probes to perform sheet resistance measurements, a quantitative carrier profile extraction based on the evolution of the sheet resistance versus depth along a beveled surface is obtained. Considering...... the properties of both approaches on Al+ implants in germanium with different anneal treatments....

Radiation-heterogeneous processes on the surface of stainless steel in contact with water

International Nuclear Information System (INIS)

Garibov, A.; Agayev, T.N.; Velibekova, G.Z.; Ismayilov, Sh.S.; Aliyev, A.G.

2003-01-01

Full text: Stainless steels are one of prevailing materials of nuclear power engineering. Under operating conditions in real systems they are exposed to influence of ionizing radiation in contact with various environments. Therefore in the processes of corrosion and destruction of stainless steels special significance takes on surface processes and subsequent heterogeneous processes with their participation. In this report the results of research of nuclear-heterogeneous processes regularities in contact with stainless steel of nuclear reactors with water under influence of γ-quanta in the temperature range 300-573 K are given. Radiolytic processes in water are investigated comprehensively and therefore it was taken as modelling system for titration of surface defects and secondary electrons, emitted from metal. It was determined, that radiation processes in stainless steel give rise to the increasing of energy output of molecular hydrogen at water radiolysis from 0.45 molecule/100 eV at pure water radiolysis at 296 K up to 3.4 molecule/100 eV at the presence of stainless steel at 300 K. With increase of temperature the output of molecular hydrogen increases up to 8.2 molecule/100 eV at 573 K. Processes of lattice damage in samples of stainless steel under influence of γ-rays were investigated by electrophysical method. Influence of γ-radiation on stainless steel in contact with water at temperatures T ≤ 423 K and initial values of radiation dose D ≤ 200 kGy given rise to the reduction of electrical resistivity of samples. At doses D≥200 kGy electrical resistivity is increased. Increase of temperature from 333 K up to 423 K lead to the reduction of dose value, at which the transition to resistance increase, from 200 kGy up to 100 kGy occurs. At T≥523 K insoluble oxide phase is formed on a surface of metal which give rise to the increase of electrical resistivity of stainless steel samples. Surface oxide film formed in contact of stainless steel + H 2 O

Methicillin-resistant Staphylococcus aureus prevention strategies in the ICU: a clinical decision analysis*.

Science.gov (United States)

Ziakas, Panayiotis D; Zacharioudakis, Ioannis M; Zervou, Fainareti N; Mylonakis, Eleftherios

2015-02-01

ICUs are a major reservoir of methicillin-resistant Staphylococcus aureus. Our aim was to estimate costs and effectiveness of methicillin-resistant Staphylococcus aureus prevention policies. We evaluated three up-to-date methicillin-resistant Staphylococcus aureus prevention policies, namely, 1) nasal screening and contact precautions of methicillin-resistant Staphylococcus aureus-positive patients; 2) nasal screening, contact precautions, and decolonization (targeted decolonization) of methicillin-resistant Staphylococcus aureus carriers; and 3) universal decolonization without screening. We implemented a decision-analytic model with deterministic and probabilistic analyses. Methicillin-resistant Staphylococcus aureus infections averted, quality-adjusted life years gained, and incremental cost-effectiveness ratios were calculated. Cost-effectiveness planes and acceptability curves were plotted for various willingness-to-pay thresholds to address uncertainty. At base-case scenario, universal decolonization was the dominant strategy; it averted 1.31% and 1.59% of methicillin-resistant Staphylococcus aureus infections over targeted decolonization and screening and contact precautions, respectively, and saved $16,203/quality-adjusted life year over targeted decolonization and 14,562/quality-adjusted life year over screening and contact precautions. Results were robust in sensitivity analysis for a wide range of input variables. In probabilistic analysis, universal decolonization increased quality-adjusted life years by 1.06% (95% CI, 1.02-1.09) over targeted decolonization and by 1.29% (95% CI, 1.24-1.33) over screening and contact precautions; universal decolonization resulted in average savings of $172 (95% CI, $168-$175) and $189 (95% CI, $185-$193) over targeted decolonization and screening and contact precautions, respectively. With willingness-to-pay threshold per quality-adjusted life year gained ranging from $0 to $50,000, universal decolonization was dominant

Metallization systems for stable ohmic contacts to GaAs