Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Shimomura, Kenichi; Ohshita, Yoshio; Kamiya, Itaru, E-mail: kamiya@toyota-ti.ac.jp [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Suzuki, Hidetoshi [Faculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Sasaki, Takuo; Takahasi, Masamitu [Quantum Beam Science Center, Japan Atomic Energy Agency, Koto 1-1-1, Sayo-cho, Hyogo 679-5148 (Japan)

2015-11-14

Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping. The difference observed is attributed to In-Ga intermixing between the QDs and the cap layer under limited supply of In. Photoluminescence (PL) wavelength can be tuned by controlling the intermixing, which affects both the strain induced in the QDs and the barrier heights. The PL wavelength also varies with the cap layer thickness. A large redshift occurs by reducing the cap thickness. The in situ XRD observation reveals that this is a result of reduced strain. We demonstrate how such information about strain can be applied for designing and preparing novel device structures.

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

International Nuclear Information System (INIS)

Shimomura, Kenichi; Ohshita, Yoshio; Kamiya, Itaru; Suzuki, Hidetoshi; Sasaki, Takuo; Takahasi, Masamitu

2015-01-01

Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping. The difference observed is attributed to In-Ga intermixing between the QDs and the cap layer under limited supply of In. Photoluminescence (PL) wavelength can be tuned by controlling the intermixing, which affects both the strain induced in the QDs and the barrier heights. The PL wavelength also varies with the cap layer thickness. A large redshift occurs by reducing the cap thickness. The in situ XRD observation reveals that this is a result of reduced strain. We demonstrate how such information about strain can be applied for designing and preparing novel device structures

Growing imbedded Ni3C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers

International Nuclear Information System (INIS)

Barna, Arpad; Kotis, Laszlo; Labar, Janos; Sulyok, Attila; Toth, Attila L; Menyhard, Miklos; Panjan, Peter

2011-01-01

C/Ni bilayers of various layer thicknesses (20-40 nm) were ion bombarded using Ga + and Ni + projectiles of energies 20 and 30 keV. Ion bombardment resulted in the growth of a Ni 3 C rich layer with the following features: (a) sharp carbon/Ni 3 C rich layer interface, (b) the amount of Ni 3 C produced by the irradiation proportional to the square root of the fluence and dependent on the type of projectile, (c) good correlation between the distribution of vacancies produced by the ion bombardment and the distribution of Ni 3 C. The formation of the metastable Ni 3 C compound was explained by a vacancy-assisted process. The sharp interface is the consequence of a relaxation process removing the intermixed Ni from the carbon layer. The square root of fluence dependence of the thickness of the Ni 3 C-rich layer can be explained by a usual diffusion equation considering moving boundaries.

Organic photovoltaic effects depending on CuPc layer thickness

International Nuclear Information System (INIS)

Hur, Sung Woo; Kim, Tae Wan; Chung, Dong Hoe; Oh, Hyun Seok; Kim, Chung Hyeok; Lee, Joon Ung; Park, Jong Wook

2004-01-01

Organic photovoltaic effects were studied in device structures of ITO/CuPc/Al and ITO/CuPc/C 60 /BCP/Al by varying the CuPc layer thickness. Since the exciton diffusion length is relatively short in organic semiconductors, a study on the thickness-dependent photovoltaic effects is important. The thickness of the CuPc layer was varied from 10 nm to 50 nm. We found that the optimum CuPc layer thickness was around 40 nm from the analysis of the current density-voltage characteristics in an ITO/CuPc/Al photovoltaic cell. The efficiency of the device shows that the multi-layered heterojunction structure is more appropriate for photovoltaic cells.

Determination of accurate metal silicide layer thickness by RBS

International Nuclear Information System (INIS)

Kirchhoff, J.F.; Baumann, S.M.; Evans, C.; Ward, I.; Coveney, P.

1995-01-01

Rutherford Backscattering Spectrometry (RBS) is a proven useful analytical tool for determining compositional information of a wide variety of materials. One of the most widely utilized applications of RBS is the study of the composition of metal silicides (MSi x ), also referred to as polycides. A key quantity obtained from an analysis of a metal silicide is the ratio of silicon to metal (Si/M). Although compositional information is very reliable in these applications, determination of metal silicide layer thickness by RBS techniques can differ from true layer thicknesses by more than 40%. The cause of these differences lies in how the densities utilized in the RBS analysis are calculated. The standard RBS analysis software packages calculate layer densities by assuming each element's bulk densities weighted by the fractional atomic presence. This calculation causes large thickness discrepancies in metal silicide thicknesses because most films form into crystal structures with distinct densities. Assuming a constant layer density for a full spectrum of Si/M values for metal silicide samples improves layer thickness determination but ignores the underlying physics of the films. We will present results of RBS determination of the thickness various metal silicide films with a range of Si/M values using a physically accurate model for the calculation of layer densities. The thicknesses are compared to scanning electron microscopy (SEM) cross-section micrographs. We have also developed supporting software that incorporates these calculations into routine analyses. (orig.)

The effect of the gas factor on selecting the thickness of a layer during two-layer getting of thick seams. [USSR

Energy Technology Data Exchange (ETDEWEB)

Varekha, Zh P; Kurkin, A S; Vechera, V N

1979-01-01

For technico-economic verification of the selection of the efficient removed thickness of upper and lower layers under conditions of high gas abundance of seams, the KNIUI has developed an economic model of converted costs within a getting field, allowing for natural and technical factors. The calculation considers specific costs for stoping work when getting the upper and lower layers, digging and maintenance of development workings, coal transport, assembly-disassembly work, ventilation, labor costs, degassing, etc. The calculation dependences and nomogram obtained enable comparatively easy definition of efficient thicknesses of removed layers when designing stoping work at thick, gently sloping seams, as well as calculation converted costs using as the initial data the total thickness of the seam, its natural gas content, and the expected degree of preliminary degassing.

Ultrasonic Measurement of Interfacial Layer Thickness of Sub-Quarter-Wavelength

Energy Technology Data Exchange (ETDEWEB)

Kim, No Hyu; Lee, Sang Soon [Korea University of Technology and Education, Cheonan (Korea, Republic of)

2003-12-15

This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave used in the ultrasonic pulse-echo measurements. The technique determines the thickness of a thin layer in a tapered medium from constructive interference of multiple reflection waves. The interference characteristics are derived and investigated in theoretical and experimental approaches. Modified total reflection wave g(t) defined as difference between total and first reflection waves increases in amplitude as the interfacial layer thickness decreases down to zero. A layer thickness less than one-tenth of the ultrasonic wavelength is measured using the maximum amplitude of g(t) with a good accuracy and sensitivity. The method also requires no inversion process to extract the thickness information from the waveforms of reflected waves, so that it makes possible to have the on-line thickness measurement of a thin layer such as a lubricating oil film in thrust bearings and journal bearings during manufacturing process

Ultrasonic Measurement of Interfacial Layer Thickness of Sub-Quarter-Wavelength

International Nuclear Information System (INIS)

Kim, No Hyu; Lee, Sang Soon

2003-01-01

This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave used in the ultrasonic pulse-echo measurements. The technique determines the thickness of a thin layer in a tapered medium from constructive interference of multiple reflection waves. The interference characteristics are derived and investigated in theoretical and experimental approaches. Modified total reflection wave g(t) defined as difference between total and first reflection waves increases in amplitude as the interfacial layer thickness decreases down to zero. A layer thickness less than one-tenth of the ultrasonic wavelength is measured using the maximum amplitude of g(t) with a good accuracy and sensitivity. The method also requires no inversion process to extract the thickness information from the waveforms of reflected waves, so that it makes possible to have the on-line thickness measurement of a thin layer such as a lubricating oil film in thrust bearings and journal bearings during manufacturing process

Formation of stacking faults and misfit dislocations during Zn diffusion-enhanced intermixing of a GaInAsP/InP heterostructure

International Nuclear Information System (INIS)

Park, H.H.; Nam, E.S.; Lee, Y.T.; Lee, E.H.; Lee, J.Y.; Kwon, O.

1991-01-01

In this paper the microstructural degradation of a lattice-matched Ga 0.28 In 0.72 As 0.61 P 0.39 /InP heterointerface during atomic intermixing induced by Zn diffusion are investigated using high-resolution transmission electron microscopy and Auger electron spectroscopy. The localized interfacial stress caused by intermixing appears to create stacking faults in the Ga-mixed Inp substrate, and dislocation tangles in the In-mixed GaInAsP layer. The results are attributed to the contrasted effect of tensile and compressive stresses upon the nucleation of partial dislocations from both sides of the intermixed interface. A qualitative model is proposed for the homogeneous nucleation of misfit dislocations from the locally stressed interface

Experimental study on effects of inlet boundary layer thickness and boundary layer fence in a turbine cascade

International Nuclear Information System (INIS)

Jun, Y. M.; Chung, J. T.

2000-01-01

The working fluid from the combustor to the turbine stage of a gas turbine makes various boundary layer thickness. Since the inlet boundary layer thickness is one of the important factors that affect the turbine efficiency, It is necessary to investigate secondary flow and loss with various boundary layer thickness conditions. In the present study, the effect of various inlet boundary layer thickness on secondary flow and loss and the proper height of the boundary layer fences for various boundary layer thickness were investigated. Measurements of secondary flow velocity and total pressure loss within and downstream of the passage were taken under 5 boundary layer thickness conditions, 16, 36, 52, 69, 110mm. It was found that total pressure loss and secondary flow areas were increased with increase of thickness but they were maintained almost at the same position. At the following research about the boundary layer fences, 1/6, 1/3, 1/2 of each inlet boundary layer thickness and 12mm were used as the fence heights. As a result, it was observed that the proper height of the fences was generally constant since the passage vortex remained almost at the same position. Therefore once the geometry of a cascade is decided, the location of the passage vortex and the proper fence height are appeared to be determined at the same time. When the inlet boundary layer thickness is relatively small, the loss caused by the proper fence becomes bigger than end wall loss so that it dominates secondary loss. In these cases the proper fence height is decided not by the cascade geometry but by the inlet boundary layer thickness as previous investigations

Optimizing phonon scattering by tuning surface-interdiffusion-driven intermixing to break the random-alloy limit of thermal conductivity

Science.gov (United States)

Yang, Xiaolong; Li, Wu

2018-01-01

We investigate the evolution of the cross-plane thermal conductivity κ of superlattices (SLs) as interfaces change from perfectly abrupt to totally intermixed, by using nonequilibrium molecular dynamics simulations in combination with the spectral heat current calculations. We highlight the role of surface-interdiffusion-driven intermixing by calculating the κ of SLs with changing interface roughness, whose tuning allows for κ values much lower than the "alloy limit" and the abrupt interface limit in same cases. The interplay between alloy and interface scattering in different frequency ranges provides a physical basis to predict a minimum of thermal conductivity. More specifically, we also explore how the interface roughness affects the thermal conductivities for SL materials with a broad span of atomic mass and bond strength. In particular, we find that (i) only when the "spacer" thickness of SLs increases up to a critical value, κ of rough SLs can break the corresponding "alloy limit," since SLs with different "spacer" thickness have different characteristic length of phonon transport, which is influenced by surface-interdiffusion-driven intermixing to different extend. (ii) Whether κ changes monotonically with interface roughness strongly depends on the period length and intrinsic behavior of phonon transport for SL materials. Especially, for the SL with large period length, there exists an optimal interface roughness that can minimize the thermal conductivity. (iii) Surface-interdiffusion-driven intermixing is more effective in achieving a low κ below the alloy limit for SL materials with large mass mismatch than with small one. (iv) It is possible for SL materials with large lattice mismatch (i.e., bond strength) to design an ideally abrupt interface structure with κ much below the alloy limit. These results have clear implications for optimization of thermal transport for heat management and for the development of thermoelectric materials.

Development of examination technique for oxide layer thickness measurement of irradiated fuel rods

International Nuclear Information System (INIS)

Koo, D. S.; Park, S. W.; Kim, J. H.; Seo, H. S.; Min, D. K.; Kim, E. K.; Chun, Y. B.; Bang, K. S.

1999-06-01

Technique for oxide layer thickness measurement of irradiated fuel rods was developed to measure oxide layer thickness and study characteristic of fuel rods. Oxide layer thickness of irradiated fuels were measured, analyzed. Outer oxide layer thickness of 3 cycle-irradiated fuel rods were 20 - 30 μm, inner oxide layer thickness 0 - 10 μm and inner oxide layer thickness on cracked cladding about 30 μm. Oxide layer thickness of 4 cycle-irradiated fuel rods were about 2 times as thick as those of 1 cycle-irradiated fuel rods. Oxide layer on lower region of irradiated fuel rods was thin and oxide layer from lower region to upper region indicated gradual increase in thickness. Oxide layer thickness from 2500 to 3000 mm showed maximum and oxide layer thickness from 3000 to top region of irradiated fuel rods showed decreasing trend. Inner oxide layer thicknesses of 4 cycle-irradiated fuel rod were about 8 μm at 750 - 3500 mm from the bottom end of fuel rod. Outer oxide layer thickness were about 8 μm at 750 - 1000 mm from the bottom end of fuel rod. These indicated gradual increase up to upper region from the bottom end of fuel rod. These indicated gradual increase up to upper region from the bottom end of fuel. Oxide layer thickness technique will apply safety evaluation and study of reactor fuels. (author). 6 refs., 14 figs

Charge Separation in Intermixed Polymer:PC70BM Photovoltaic Blends: Correlating Structural and Photophysical Length Scales as a Function of Blend Composition

KAUST Repository

Utzat, Hendrik

2017-04-24

A key challenge in achieving control over photocurrent generation by bulk-heterojunction organic solar cells is understanding how the morphology of the active layer impacts charge separation and in particular the separation dynamics within molecularly intermixed donor-acceptor domains versus the dynamics between phase-segregated domains. This paper addresses this issue by studying blends and devices of the amorphous silicon-indacenodithiophene polymer SiIDT-DTBT and the acceptor PCBM. By changing the blend composition, we modulate the size and density of the pure and intermixed domains on the nanometer length scale. Laser spectroscopic studies show that these changes in morphology correlate quantitatively with the changes in charge separation dynamics on the nanosecond time scale and with device photocurrent densities. At low fullerene compositions, where only a single, molecularly intermixed polymer-fullerene phase is observed, photoexcitation results in a ∼ 30% charge loss from geminate polaron pair recombination, which is further studied via light intensity experiments showing that the radius of the polaron pairs in the intermixed phase is 3-5 nm. At high fullerene compositions (≥67%), where the intermixed domains are 1-3 nm and the pure fullerene phases reach ∼4 nm, the geminate recombination is suppressed by the reduction of the intermixed phase, making the fullerene domains accessible for electron escape.

Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

Science.gov (United States)

Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.

2008-08-01

Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.

Effect of layer thickness on the thermal release from Be-D co-deposited layers

Science.gov (United States)

Baldwin, M. J.; Doerner, R. P.

2014-08-01

The results of previous work (Baldwin et al 2013 J. Nucl. Mater. 438 S967-70 and Baldwin et al 2014 Nucl. Fusion 54 073005) are extended to explore the influence of layer thickness on the thermal D2 release from co-deposited Be-(0.05)D layers produced at ˜323 K. Bake desorption of layers of thickness 0.2-0.7 µm are explored with a view to examine the influence of layer thickness on the efficacy of the proposed ITER bake procedure, to be carried out at the fixed temperatures of 513 K on the first wall and 623 K in the divertor. The results of experiment and modelling with the TMAP-7 hydrogen transport code, show that thicker Be-D co-deposited layers are relatively more difficult to desorb (time-wise) than thinner layers with the same concentrations of intrinsic traps and retained hydrogen isotope fraction.

Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots

Energy Technology Data Exchange (ETDEWEB)

Barik, S; Tan, H H; Jagadish, C [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2007-05-02

We report and compare proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots (QDs). After ion implantation at 20-300 deg. C, the QDs are rapid thermally annealed at 850 deg. C for 30 s. Proton implantation induces less energy shift than P ion implantation for a given concentration of atomic displacements due to the more efficient dynamic annealing of the defects created by protons. The implantation-induced energy shift reaches a maximum value of about 260 meV for a dose of 5 x 10{sup 12} ions cm{sup -2} in the P ion implanted QDs, which also show narrower PL linewidths compared to the proton implanted QDs. We also report the effects of an InGaAs top cap layer on the ion implantation-induced QD intermixing and show that defect production and annihilation processes evolve differently in InGaAs and InP layers and vary with the implantation temperature. When the implantation is performed at higher temperatures, the energy shift of the P ion implanted QDs capped with an InP layer increases due to the reduction in larger defect cluster formation at higher temperatures, while the energy shift of the proton implanted QDs decreases due to increased dynamic annealing irrespective of their cap layers.

Low-temperature interface reactions in layered Au/Sb films: In situ investigation of the formation of an amorphous phase

Science.gov (United States)

Boyen, H.-G.; Cossy-Favre, A.; Oelhafen, P.; Siber, A.; Ziemann, P.; Lauinger, C.; Moser, T.; Häussler, P.; Baumann, F.

1995-01-01

Photoelectron-spectroscopy methods combined with electrical-resistance measurements were employed to study the effects of intermixing at Au/Sb interfaces at low temperatures. For the purpose of characterizing the growth processes of the intermixed phase on a ML scale, Au/Sb bilayers (layer thicknesses DAu=0.5-75 ML and DSb=150 ML) were evaporated at 77 K and the different in situ techniques allowed a comparison to vapor-quenched amorphous AuxSb100-x alloys. For Au thicknesses between 0.5 and 0.9 ML, a change from a semiconducting to a metallic behavior of the samples has been detected, as indicated by the development of a steplike photoelectron intensity at the Fermi level. Evidence has been found that for Au coverages quenched amorphous alloys. Variation of the deposition temperature Ts revealed that an amorphous interface layer is only formed for Ts<= 220 K. This is consistent with the fact that for multilayers with large modulation lengths containing unreacted polycrystalline Au and Sb layers, long-range interdiffusion is found to set in at temperatures above 230 K. This interdiffusion, however, results in the formation of polycrystalline Au-Sb alloys.

Effect of layer thickness on the thermal release from Be–D co-deposited layers

International Nuclear Information System (INIS)

Baldwin, M.J.; Doerner, R.P.

2014-01-01

The results of previous work (Baldwin et al 2013 J. Nucl. Mater. 438 S967–70 and Baldwin et al 2014 Nucl. Fusion 54 073005) are extended to explore the influence of layer thickness on the thermal D 2 release from co-deposited Be–(0.05)D layers produced at ∼323 K. Bake desorption of layers of thickness 0.2–0.7 µm are explored with a view to examine the influence of layer thickness on the efficacy of the proposed ITER bake procedure, to be carried out at the fixed temperatures of 513 K on the first wall and 623 K in the divertor. The results of experiment and modelling with the TMAP-7 hydrogen transport code, show that thicker Be–D co-deposited layers are relatively more difficult to desorb (time-wise) than thinner layers with the same concentrations of intrinsic traps and retained hydrogen isotope fraction. (paper)

Contact problems of a rectangular block on an elastic layer of finite thickness: Part II: The thick layer

NARCIS (Netherlands)

Alblas, J.B.; Kuipers, M.

1970-01-01

We consider a layer of finite thickness loaded in plane strain by a stamp with a straight horizontal base, which is smooth and rigid. The stamp is pressed vertically into the layer and is slightly rotated by an external moment load subsequently. Two cases are considered successively: the lower side

Effect of boundary layer thickness on the flow characteristics around a rectangular prism

International Nuclear Information System (INIS)

Ji, Ho Seong; Kim, Kyung Chun

2001-01-01

Effect of boundary layer thickness on the flow characteristics around a rectangular prism has been investigated by using a PIV(Particle Image Velocimetry) technique. Three different boundary layers (thick, medium and thin) were generated in the atmospheric boundary layer wind tunnel at Pusan National University. The thick boundary layer having 670mm thickness was generated by using spires and roughness elements. The medium thickness of boundary layer(δ=270mm) was the natural turbulent boundary layer at the test section with fully long developing length(18m). The thin boundary layer with 36.5mm thickness was generated by on a smooth panel elevated 70cm from the wind tunnel floor. The Reynolds number based on the free stream velocity and the height of the model was 7.9X10 3 . The mean velocity vector fields and turbulent kinetic energy distribution were measured and compared. The effect of boundary layer thickness is clearly observed not only in the length of separation bubble but also in the reattachment points. The thinner boundary layer thickness, the higher turbulent kinetic energy peak around the model roof. It is strongly recommended that the height ratio between model and approaching boundary layer thickness should be a major parameter

Study of buffer layer thickness on bulk heterojunction solar cell.

Science.gov (United States)

Noh, Seunguk; Suman, C K; Lee, Donggu; Kim, Seohee; Lee, Changhee

2010-10-01

We studied the effect of the buffer layer (molybdenum-oxide (MoO3)) thickness on the performance of organic solar cell based on blends of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester fullerene derivative (PCBM). The thickness of MoO3 was varied from 1 nm to 30 nm for optimization of device performance. The photocurrent-voltage and impedance spectroscopy were measured under dark and AM1.5G solar simulated illumination of 100 mW/cm2 for exploring the role of the buffer layer thickness on carrier collection at an anode. The MoO3 thickness of the optimized device (efficiency approximately 3.7%) was found to be in the range of 5 approximately 10 nm. The short-circuit current and the shunt resistance decrease gradually for thicker MoO3 layer over 5 nm. The device can be modeled as the combination of three RC parallel circuits (each one for the active layer, buffer layer and interface between the buffer layer and the active layer) in series with contact resistance (Rs approximately 60 ohm).

Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers

International Nuclear Information System (INIS)

Yugov, A. A.; Malahov, S. S.; Donskov, A. A.; Duhnovskii, M. P.; Knyazev, S. N.; Kozlova, Yu. P.; Yugova, T. G.; Belogorokhov, I. A.

2016-01-01

The effect of the type of substrate, sapphire substrate (c- and r-orientation) or GaN/Al_2O_3 template (c- and r-orientations), on the nitridation of an amorphous titanium nanolayer is shown. The effect of the titanium-nanolayer thickness on thick GaN epitaxial layer self-separation from the substrate is revealed. The titanium-nanolayer thickness at which thick GaN layer is reproducibly self-separated is within 20–40 nm.

Surgical management and outcomes of ganglioneuroma and ganglioneuroblastoma-intermixed.

Science.gov (United States)

Yang, Tianyou; Huang, Yongbo; Xu, Tao; Tan, Tianbao; Yang, Jiliang; Pan, Jing; Hu, Chao; Li, Jiahao; Zou, Yan

2017-09-01

Clinical researches about the management and outcomes of ganglioneuroma and ganglioneuroblastoma-intermixed are limited. We report the surgical outcomes of ganglioneuroma and ganglioneuroblastoma-intermixed in a single institution. Ganglioneuroma and ganglioneuroblastoma-intermixed diagnosed and resected between May 2009 and May 2015 in a tertiary children's hospital were retrospectively reviewed. Patients' demographic data, INSS stage, surgical complications, residual tumor size and outcomes were collected. Thirty-four patients were included in the current study. All had localized tumors and were surgically managed. The overall acute complications rates were 8.8% (3/34) and none were fatal. Thirty-three of 34 patients had at least macroscopic tumor resection. Six patients had radiographically detected residual tumor after surgery, 25 none and 3 undocumented. Thirty-three (97.1%) patients were alive during a median follow-up of 36 months (range 1-82). In subgroup analysis, no significant difference regarding surgical complications and survival was found between ganglioneuroma and ganglioneuroblastoma-intermixed. Increased complete resection rates were observed in thoracic tumor compared with abdominal ones (p = 0.03). However, no significant difference (p = 0.089) regarding overall survival was found between patients with residual tumors and those without. Of the six patients with residual tumors, three showed complete resolution, two were unchanged and one died 3 years after initial surgery (the only death in this study). Ganglioneuroma and ganglioneuroblastoma-intermixed can be safely and effectively resected, the residual tumor seems not to influence overall survival.

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

International Nuclear Information System (INIS)

Wilczynski, M.

2011-01-01

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes. - Research highlights: → The torque oscillates with the thickness of ferromagnetic layer. → Bias dependence of the torque changes with the layer thickness. → Bias dependence of the normal torque can be asymmetric.

Mechanical intermixing of components in (CoMoNi)-based systems and the formation of (CoMoNi)/WC nanocomposite layers on Ti sheets under ball collisions

Science.gov (United States)

Romankov, S.; Park, Y. C.; Shchetinin, I. V.

2017-11-01

Cobalt (Co), molybdenum (Mo), and nickel (Ni) components were simultaneously introduced onto titanium (Ti) surfaces from a composed target using ball collisions. Tungsten carbide (WC) balls were selected for processing as the source of a cemented carbide reinforcement phase. During processing, ball collisions continuously introduced components from the target and the grinding media onto the Ti surface and induced mechanical intermixing of the elements, resulting in formation of a complex nanocomposite structure onto the Ti surface. The as-fabricated microstructure consisted of uniformly dispersed WC particles embedded within an integrated metallic matrix composed of an amorphous phase with nanocrystalline grains. The phase composition of the alloyed layers, atomic reactions, and the matrix grain sizes depended on the combination of components introduced onto the Ti surface during milling. The as-fabricated layer exhibited a very high hardness compared to industrial metallic alloys and tool steel materials. This approach could be used for the manufacture of both cemented carbides and amorphous matrix composite layers.

Effect of layer thickness on the properties of nickel thermal sprayed steel

Energy Technology Data Exchange (ETDEWEB)

Nurisna, Zuhri, E-mail: zuhri-nurisna@yahoo.co.id; Triyono,, E-mail: triyonomesin@uns.ac.id; Muhayat, Nurul, E-mail: nurulmuhayat@staff.uns.ac.id; Wijayanta, Agung Tri, E-mail: agungtw@uns.ac.id [Department of Mechanical Engineering, Sebelas Maret University, Jl. Jr. Sutami 36 A, Surakarta (Indonesia)

2016-03-29

Thermal arc spray nickel coating is widely used for decorative and functional applications, by improving corrosion resistance, wear resistance, heat resistence or by modifying other properties of the coated materials. There are several properties have been studied. Layer thickness of nickel thermal sprayed steel may be make harder the substrate surface. In this study, the effect of layer thickness of nickel thermal sprayed steel has been investigated. The rectangular substrate specimens were coated by Ni–5 wt.% Al using wire arc spray method. The thickness of coating layers were in range from 0.4 to 1.0 mm. Different thickness of coating layers were conducted to investigate their effect on hardness and morphology. The coating layer was examined by using microvickers and scanning electron microscope with EDX attachment. Generally, the hardness at the interface increased with increasing thickness of coating layers for all specimens due to higher heat input during spraying process. Morphology analysis result that during spraying process aluminum would react with surrounding oxygen and form aluminum oxide at outer surface of splat. Moreover, porosity was formed in coating layers. However, presence porosity is not related to thickness of coating material. The thicker coating layer resulted highesr of hardness and bond strength.

Characterisation of intermixed quantum well material by measurements of spontaneous emission

International Nuclear Information System (INIS)

Blay, C.

2000-01-01

The purpose of this thesis is to present experimental techniques and results of the characterisation of intermixed GaAs/AlGaAs quantum well material, specifically gain spectra and carrier lifetime measurements. Relationships are established between intermixing and internal scattering loss, quantum efficiency, quantum well gain coefficient, peak modal gain, and radiative and non-radiative recombination rates. The process of quantum well intermixing, to engineer the bandgap of quantum well material, is now a well understood and reproducible technique. It can be used in producing extended cavity lasers, multi wavelength lasers and photonic integrated circuits. However, little work has been carried out to quantify the effects of intermixing on material parameters. Until now device optimisation has been carried out by a trial and error technique. One of the most fundamental aspects of laser behaviour concerns the gain characteristics of the amplifying medium. An understanding of these characteristics is necessary if one is to make meaningful estimates of steady state or transient laser output intensity and frequency. Optimisation of these fundamental parameters allows the last bit of performance such as optical power, spectral width and modulation speeds, to be squeezed from intermixed quantum well devices. (author)

Control of Alq3 wetting layer thickness via substrate surface functionalization.

Science.gov (United States)

Tsoi, Shufen; Szeto, Bryan; Fleischauer, Michael D; Veinot, Jonathan G C; Brett, Michael J

2007-06-05

The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness.

Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy

International Nuclear Information System (INIS)

Fritz, I.J.

1987-01-01

Experimental measurements of critical layer thicknesses (CLT's) in strained-layer epitaxy are considered. Finite experimental resolution can have a major effect on measured CLT's and can easily lead to spurious results. The theoretical approach to critical layer thicknesses of J. W. Matthews [J. Vac. Sci. Technol. 12, 126 (1975)] has been modified in a straightforward way to predict the apparent critical thickness for an experiment with finite resolution in lattice parameter. The theory has also been modified to account for the general empirical result that fewer misfit dislocations are generated than predicted by equilibrium calculation. The resulting expression is fit to recent x-ray diffraction data on InGaAs/GaAs and SiGe/Si. The results suggest that CLT's in these systems may not be significantly larger than predicted by equilibrium theory, in agreement with high-resolution measurements

Effect of duration and severity of migraine on retinal nerve fiber layer, ganglion cell layer, and choroidal thickness.

Science.gov (United States)

Abdellatif, Mona K; Fouad, Mohamed M

2018-03-01

To investigate the factors in migraine that have the highest significance on retinal and choroidal layers' thickness. Ninety patients with migraine and 40 age-matched healthy participants were enrolled in this observational, cross-sectional study. After full ophthalmological examination, spectral domain-optical coherence tomography was done for all patients measuring the thickness of ganglion cell layer and retinal nerve fiber layer. Enhanced depth imaging technique was used to measure the choroidal thickness. There was significant thinning in the superior and inferior ganglion cell layers, all retinal nerve fiber layer quadrants, and all choroidal quadrants (except for the central subfield) in migraineurs compared to controls. The duration of migraine was significantly correlated with ganglion cell layer, retinal nerve fiber layer, and all choroidal quadrants, while the severity of migraine was significantly correlated with ganglion cell layer and retinal nerve fiber layer only. Multiregression analysis showed that the duration of migraine is the most important determinant factor of the superior retinal nerve fiber layer quadrant (β = -0.375, p = 0.001) and in all the choroidal quadrants (β = -0.531, -0.692, -0.503, -0.461, -0.564, respectively, p  layer quadrants (β = -0.256, -0.335, -0.308; p  = 0.036, 0.005, 0.009, respectively) and the inferior ganglion cell layer hemisphere (β = -0.377 and p = 0.001). Ganglion cell layer, retinal nerve fiber layer, and choroidal thickness are significantly thinner in patients with migraine. The severity of migraine has more significant influence in the thinning of ganglion cell layer and retinal nerve fiber layer, while the duration of the disease affected the choroidal thickness more.

Layer thickness measurement using the X-ray fluorescence principle

International Nuclear Information System (INIS)

Mengelkamp, B.

1980-01-01

Curium 244 having a gamma energy of about 15.5 keV is used as excitation emitter for contactless and continuous measuring of the thickness of metallic layers on iron strip. Soft gamma radiation is absorbed in matter according to the photo effect, so that X-ray fluorescence radiation is generated in the matter, which depends on the element and is radiated to all sides. For instance, it amounts for iron 6.4 keV and is measured with a specific ionisation chamber for this energy range. With increasing atomic number of the elements, the energy of fluorescence radiation increases and hence also the emission signal of the detector. The prerequisite for a usable measuring effect is an element distance of at least two and the thickness of the layer to be measured being in an optimum range. A signal dependent on the thickness of the layer is produced either by absorption of iron radiation (absorption method - aluminium and tin) or by build-up radiation of the material of the layer (emission method - zinc and lead). (orig./GSCH) [de

Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

Energy Technology Data Exchange (ETDEWEB)

Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

2017-01-01

The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

Retinal nerve fiber layer thickness and neuropsychiatric manifestations in systemic lupus erythematosus.

Science.gov (United States)

Shulman, S; Shorer, R; Wollman, J; Dotan, G; Paran, D

2017-11-01

Background Cognitive impairment is frequent in systemic lupus erythematosus. Atrophy of the corpus callosum and hippocampus have been reported in patients with systemic lupus erythematosus, and diffusion tensor imaging studies have shown impaired white matter integrity, suggesting that white matter damage in systemic lupus erythematosus may underlie the cognitive impairment as well as other neuropsychiatric systemic lupus erythematosus manifestations. Retinal nerve fiber layer thickness, as assessed by optical coherence tomography, has been suggested as a biomarker for white matter damage in neurologic disorders such as multiple sclerosis, Alzheimer's disease and Parkinson's disease. Retinal nerve fiber layer thinning may occur early, even in patients with mild clinical symptoms. Aim The objective of this study was to assess the association of retinal nerve fiber layer thickness, as a biomarker of white matter damage in systemic lupus erythematosus patients, with neuropsychiatric systemic lupus erythematosus manifestations, including cognitive impairment. Methods Twenty-one consecutive patients with systemic lupus erythematosus underwent neuropsychological testing using a validated computerized battery of tests as well as the Rey-Auditory verbal learning test. All 21 patients, as well as 11 healthy, age matched controls, underwent optical coherence tomography testing to assess retinal nerve fiber layer thickness. Correlations between retinal nerve fiber layer thickness and results in eight cognitive domains assessed by the computerized battery of tests as well as the Rey-Auditory verbal learning test were assessed in patients with systemic lupus erythematosus, with and without neuropsychiatric systemic lupus erythematosus, and compared to retinal nerve fiber layer thickness in healthy controls. Results No statistically significant correlation was found between retinal nerve fiber layer thickness in patients with systemic lupus erythematosus as compared to healthy

The effect of donor layer thickness on the power conversion efficiency of organic photovoltaic devices fabricated with a double small-molecular layer

International Nuclear Information System (INIS)

Lee, Su-Hwan; Kim, Dal-Ho; Shim, Tae-Hun; Park, Jea-Gun

2009-01-01

In organic photovoltaic (OPV) devices fabricated with a double small-molecular layer, the power conversion efficiency strongly depends on the thickness of the organic donor layer (here, copper phthalocyanine). In other words, the power conversion efficiency increases with the donor layer thickness up to a specific thickness (∼12.7 nm) and then decreases beyond that thickness. This trend is associated with the light absorption and carrier transport resistance of the small-molecular donor layer, both of which strongly depend on the layer thickness. Experimental and calculated results showed that the short-circuit current due to light absorption increased with the donor layer thickness, while that due to current through the donor layer decreased with 1/R. Since the total short-circuit current is the product of the light absorption current and current through the donor layer, there is a trade-off, and the maximum power conversion efficiency occurs at a specific organic donor layer thickness (e.g. ∼12.7 nm in this experiment).

Surface morphology and structure of Ge layer on Si(111) after solid phase epitaxy

Science.gov (United States)

Yoshida, Ryoma; Tosaka, Aki; Shigeta, Yukichi

2018-05-01

The surface morphology change of a Ge layer on a Si(111) surface formed by solid phase epitaxy has been investigated with a scanning tunneling microscope (STM). The Ge film was deposited at room temperature and annealed at 400 °C or 600 °C. The STM images of the sample surface after annealing at 400 °C show a flat wetting layer (WL) with small three-dimensional islands on the WL. After annealing at 600 °C, the STM images show a surface roughening with large islands. From the relation between the average height of the roughness and the deposited layer thickness, it is confirmed that the diffusion of Ge atoms becomes very active at 600 °C. The Si crystal at the interface is reconstructed and the intermixing occurs over 600 °C. However, the intermixing is fairly restricted in the solid phase epitaxy growth at 400 °C. The surface morphology changes with the crystallization at 400 °C are discussed by the shape of the islands formed on the WL surface. It is shown that the diffusion of the Ge atoms in the amorphous phase is active even at 400 °C.

Intermixing, band alignment and charge transport in AgIn5S8/CuI heterojunctions

International Nuclear Information System (INIS)

Konovalov, I.; Makhova, L.; Hesse, R.; Szargan, R.

2005-01-01

Possibilities of creating photovoltaic devices using CuI/AgIn 5 S 8 heterojunctions are considered. Among other properties, preferential formation of polar (111) surfaces makes n-type AgIn 5 S 8 an attractive candidate for absorber layers of top cells in 4-terminal tandem structures. Cu-Ag exchange at the interface with p-type CuI was observed. This intermixing results in an additional component of Ag 3d5 photoelectron line after deposition of CuI, in the Cu (but not I) contamination of the surface after a chemical removal of CuI, and in a photoelectric sensitivity of the junction at energies below the band gaps. Valence band offsets of 0.4 and 0.5 eV (cliff) were found at interfaces with thin film and bulk AgIn 5 S 8 , supporting a conduction mechanism through interface recombination. Pinning conflict at the interface between materials with contradictory doping limitations is likely to promote the intermixing

Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

KAUST Repository

Susilo, Tri B.; Alsunaidi, M. A.; Shen, Chao; Ooi, Boon S.

2015-01-01

Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.

Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

KAUST Repository

Susilo, Tri B.

2015-02-01

Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.

Peripapillary retinal nerve fiber layer and choroidal thickness in cirrhosis patients

Directory of Open Access Journals (Sweden)

M.Orcun Akdemir

2015-12-01

Full Text Available ABSTRACT Purpose: To evaluate the effect of cirrhosis on peripapillary retinal nerve fiber layer and choroidal thickness with enhanced depth imaging optical coherence tomography. Methods: This cross sectional, single center study was undertaken at Bulent Ecevit University Ophthalmology department with the participation of internal medicine, Gastroenterology department. Patients who were treated with the diagnosis of cirrhosis (n=75 were examined in the ophthalmology clinic. Age and sex matched patients (n=50 who were healthy and met the inclusion, exclusion criteria were included in the study. Complete ophthalmological examination included visual acuity with Snellen chart, intraocular pressure measurement with applanation tonometry, biomicroscopy of anterior and posterior segments, gonioscopy, axial length measurement, visual field examination, peripapillary retinal nerve fiber layer, central macular and subfoveal choroidal thickness measurements. Results: The difference between intraocular pressure values was not statistically significant between cirrhosis and control group (p=0.843. However, mean peripapillary retinal nerve fiber layer thickness was significantly thinner in cirrhosis group in all regions (p<0.001 and subfoveal choroidal thickness was significantly thinner in cirrhosis group also (p<0.001. Moreover, central macular thickness of cirrhosis group was significantly thicker than the control group (p=0.001. Conclusion: Peripapillary retinal nerve fiber layer and subfoveal choroidal thickness was significantly thinner in cirrhosis patients.

Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

Directory of Open Access Journals (Sweden)

Wei Yuan Wong

2017-01-01

Full Text Available Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

Science.gov (United States)

Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

2017-11-01

Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

Effect of layered manufacturing techniques, alloy powders, and layer thickness on metal-ceramic bond strength.

Science.gov (United States)

Ekren, Orhun; Ozkomur, Ahmet; Ucar, Yurdanur

2018-03-01

Direct metal laser sintering (DMLS) and direct metal laser melting (DMLM) have become popular for fabricating the metal frameworks of metal-ceramic restorations. How the type of layered manufacturing device, layer thickness, and alloy powder may affect the bond strength of ceramic to metal substructure is unclear. The purpose of this in vitro study was to evaluate the bond strength of dental porcelain to metal frameworks fabricated using different layered manufacturing techniques (DMLS and DMLM), Co-Cr alloy powders, and layer thicknesses and to evaluate whether a correlation exists between the bond strength and the number of ceramic remnants on the metal surface. A total of 75 bar-shaped metal specimens (n=15) were fabricated using either DMLS or DMLM. The powder alloys used were Keramit NP-S and EOS-Cobalt-Chrome SP-2 with layer thicknesses of 20 μm and 30 μm. After ceramic application, the metal-ceramic bond strength was evaluated with a 3-point-bend test. Three-way ANOVA followed by the Tukey honest significance difference test were used for statistical analysis (α=.05). De-bonding surface microstructure was observed with scanning electron microscopy. Energy dispersive spectroscopy analysis was conducted to evaluate the correlation between ceramic remnants on the metal surface and bond strength values. The mean bond strength value of DMLS was significantly higher than that of DMLM. While no statistically significant difference was found between layer thicknesses, alloy powders closely affected bond strength. Statistical comparisons revealed that the highest bond strength could be achieved with DMLS-Cobalt-Chrome SP2-20μm, and the lowest bond strength was observed in DMLS-Keramit NP-S-20μm (P≤.05). No correlation was found between porcelain remnants on the metal surface and bond strength values. The layered manufacturing device and the alloy powders evaluated in the current study closely affected the bond strength of dental porcelain to a metal framework

Changes in Macular Retinal Layers and Peripapillary Nerve Fiber Layer Thickness after 577-nm Pattern Scanning Laser in Patients with Diabetic Retinopathy.

Science.gov (United States)

Shin, Ji Soo; Lee, Young Hoon

2017-12-01

The aim of this study was to evaluate the changes in thickness of each macular retinal layer, the peripapillary retinal nerve fiber layer (RNFL), and central macular thickness (CMT) after 577-nm pattern scanning laser (PASCAL) photocoagulation in patients with diabetic retinopathy. This retrospective study included 33 eyes with diabetic retinopathy that underwent 577-nm PASCAL photocoagulation. Each retinal layer thickness, peripapillary RNFL thickness, and CMT were measured by spectral-domain optical coherence tomography before 577-nm PASCAL photocoagulation, as well as at 1, 6, and 12 months after 577-nm PASCAL photocoagulation. Computerized intraretinal segmentation of optical coherence tomography was performed to identify the thickness of each retinal layer. The average thickness of the RNFL, ganglion cell layer, inner plexiform layer, inner nuclear layer, inner retinal layer, and CMT at each follow-up increased significantly from baseline (p 0.05). Each macular retinal layer and CMT had a tendency to increase for one year after 577-nm PASCAL photocoagulation, whereas the average thickness of retinal pigment epithelium decreased at one-year follow-up compared to the baseline. Although an increase in peripapillary RNFL thickness was observed one month after 577-nm PASCAL photocoagulation, there were no significant changes at the one-year follow-up compared to the baseline. © 2017 The Korean Ophthalmological Society

Optimal thickness of hole transport layer in doped OLEDs

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.C.; Zhou, J.; Zhao, J.M.; Zhang, S.T.; Zhan, Y.Q.; Wang, X.Z.; Wu, Y.; Ding, X.M.; Hou, X.Y. [Fudan University, Surface Physics Laboratory (National Key Laboratory), Shanghai (China)

2006-06-15

Current-voltage (I-V) and electroluminescence (EL) characteristics of organic light-emitting devices with N,N'-Di-[(1-naphthalenyl)-N,N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine (NPB) of various thicknesses as the hole transport layer, and tris(8-hydroxyquinoline)aluminum (Alq{sub 3}) selectively doped with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) as the electron transport layer, have been investigated. A trapped charge induced band bend model is proposed to explain the I-V characteristics. It is suggested that space charge changes the injection barrier and therefore influences the electron injection process in addition to the carrier transport process. Enhanced external quantum efficiency of the devices due to the electron blocking effect of an inserted NPB layer is observed. The optimal thickness of the NPB layer is experimentally determined to be 12{+-}3 nm in doped devices, a value different from that for undoped devices, which is attributed to the electron trap effect of DCM molecules. This is consistent with the result that the proportion of Alq{sub 3} luminescence in the total electroluminescence (EL) spectra increases with NPB thickness up to 12 nm under a fixed bias. (orig.)

Competition between the In/Ga intermixing and the electronic coupling effects in self-assembled InAs/GaAs double-quantum-dots

Energy Technology Data Exchange (ETDEWEB)

Pocas, Luiz Carlos; Sawata, Marcella Ferraz [Universidade Tecnologica Federal do Parana (UTFPR), Apucarana, PR (Brazil); Lourenco, Sidney Alves [Universidade Tecnologica Federal do Parana (UTFPR), Londrina, PR (Brazil); Laureto, Edson; Duarte, Jose Leonil; Dias, Ivan Frederico Lupiano [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Fisica; Quivy, A.A. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica

2012-07-01

technique with GaAs spacer layers having different thickness, using photoluminescence technique (PL). PL spectra as a function of the intensity of the excitation laser allowed identifying in a reference sample containing a single layer of QDs, the formation characteristics of self-assembled InAs QDs with bimodal size distribution. The PL results from the samples with stacked InAs/GaAs double-quantum-dots can be explained by a competition between the In/Ga intermixing, which emerge during the growth process, and the electronic coupling dependent on the spacer layer thickness. (author)

Oxygen inhibition layer of composite resins: effects of layer thickness and surface layer treatment on the interlayer bond strength.

Science.gov (United States)

Bijelic-Donova, Jasmina; Garoushi, Sufyan; Lassila, Lippo V J; Vallittu, Pekka K

2015-02-01

An oxygen inhibition layer develops on surfaces exposed to air during polymerization of particulate filling composite. This study assessed the thickness of the oxygen inhibition layer of short-fiber-reinforced composite in comparison with conventional particulate filling composites. The effect of an oxygen inhibition layer on the shear bond strength of incrementally placed particulate filling composite layers was also evaluated. Four different restorative composites were selected: everX Posterior (a short-fiber-reinforced composite), Z250, SupremeXT, and Silorane. All composites were evaluated regarding the thickness of the oxygen inhibition layer and for shear bond strength. An equal amount of each composite was polymerized in air between two glass plates and the thickness of the oxygen inhibition layer was measured using a stereomicroscope. Cylindrical-shaped specimens were prepared for measurement of shear bond strength by placing incrementally two layers of the same composite material. Before applying the second composite layer, the first increment's bonding site was treated as follows: grinding with 1,000-grit silicon-carbide (SiC) abrasive paper, or treatment with ethanol or with water-spray. The inhibition depth was lowest (11.6 μm) for water-sprayed Silorane and greatest (22.9 μm) for the water-sprayed short-fiber-reinforced composite. The shear bond strength ranged from 5.8 MPa (ground Silorane) to 36.4 MPa (water-sprayed SupremeXT). The presence of an oxygen inhibition layer enhanced the interlayer shear bond strength of all investigated materials, but its absence resulted in cohesive and mixed failures only with the short-fiber-reinforced composite. Thus, more durable adhesion with short-fiber-reinforced composite is expected. © 2014 Eur J Oral Sci.

Fundamental and dynamic properties of intermixed InGaAs-InGaAsP quantum-well lasers

KAUST Repository

Chen, Cheng

2010-09-01

The fundamental and dynamic properties of InGaAs-InGaAsP lasers, where emission wavelengths were blue-shifted by quantum-well intermixing through ion implantation and annealing, were investigated to assess possible degradation by intermixing. It was found that the fundamental properties such as threshold current and slope efficiency were largely unchanged even after as much as 120 nm of wavelength shift. Meanwhile, the dynamic properties such as modulation efficiency and K factor were degraded after just a moderate degree of intermixing, but the degradation was not worsened by further intermixing. Provided the finite degradation of dynamic properties is tolerable, the present intermixing technique will be very useful for the fabrication of photonic integrated circuits. © 2006 IEEE.

High energy PIXE: A tool to characterize multi-layer thick samples

Science.gov (United States)

Subercaze, A.; Koumeir, C.; Métivier, V.; Servagent, N.; Guertin, A.; Haddad, F.

2018-02-01

High energy PIXE is a useful and non-destructive tool to characterize multi-layer thick samples such as cultural heritage objects. In a previous work, we demonstrated the possibility to perform quantitative analysis of simple multi-layer samples using high energy PIXE, without any assumption on their composition. In this work an in-depth study of the parameters involved in the method previously published is proposed. Its extension to more complex samples with a repeated layer is also presented. Experiments have been performed at the ARRONAX cyclotron using 68 MeV protons. The thicknesses and sequences of a multi-layer sample including two different layers of the same element have been determined. Performances and limits of this method are presented and discussed.

Enface Thickness Mapping and Reflectance Imaging of Retinal Layers in Diabetic Retinopathy.

Science.gov (United States)

Francis, Andrew W; Wanek, Justin; Lim, Jennifer I; Shahidi, Mahnaz

2015-01-01

To present a method for image segmentation and generation of enface thickness maps and reflectance images of retinal layers in healthy and diabetic retinopathy (DR) subjects. High density spectral domain optical coherence tomography (SDOCT) images were acquired in 10 healthy and 4 DR subjects. Customized image analysis software identified 5 retinal cell layer interfaces and generated thickness maps and reflectance images of the total retina (TR), inner retina (IR), outer retina (OR), and the inner segment ellipsoid (ISe) band. Thickness maps in DR subjects were compared to those of healthy subjects by generating deviation maps which displayed retinal locations with thickness below, within, and above the normal 95% confidence interval. In healthy subjects, TR and IR thickness maps displayed the foveal depression and increased thickness in the parafoveal region. OR and ISe thickness maps showed increased thickness at the fovea, consistent with normal retinal anatomy. In DR subjects, thickening and thinning in localized regions were demonstrated on TR, IR, OR, and ISe thickness maps, corresponding to retinal edema and atrophy, respectively. TR and OR reflectance images showed reduced reflectivity in regions of increased thickness. Hard exudates appeared as hyper-reflective spots in IR reflectance images and casted shadows on the deeper OR and ISe reflectance images. The ISe reflectance image clearly showed the presence of focal laser scars. Enface thickness mapping and reflectance imaging of retinal layers is a potentially useful method for quantifying the spatial and axial extent of pathologies due to DR.

On the Explicit Expression for Plasma Layer Thickness

CERN Document Server

Sharma, R K

2004-01-01

The marginal zone theory is used to account for the observed Fahreus Linquist effect when the viscoity of blood changes with the diameter of the capillary. An attributable cause is the axial accumulation of cells. The discharge rate from Hagen Poiseulle law at steady state was derived by Haynes (1960) for the core and plasma layer and a total discharge rate was expressed as a function of the pressure drop along the capillary, quartic dependence on the radius of the capillary and quartic dependence on the dimensionless marginal zone thickness. The apparent of viscosity of the blood is expressed as a function of the ratio of the core layer viscosity and the plasma layer viscosity. In order to back out a marginal zone thickness from a given set of information, the Charm and Kurland expression (1974) for the viscosity and hematocrit variation and the temperature dependence parameter of the hematocrit alpha can be used to develop two transcendental equations and two un! knowns. This is the recommended procedure us...

On a Explicit Expresion for Plasma Layer Thickness

CERN Document Server

Sharma, R K

2004-01-01

The marginal zone theory is used to account for the observed Fahreus Linquist effect when the viscoity of blood changes with the diameter of the capillary. An attributable cause is the axial accumulation of cells. The discharge rate from Hagen Poiseulle law at steady state was derived by Haynes (1960) for the core and plasma layer and a total discharge rate was expressed as a function of the pressure drop along the capillary, quartic dependence on the radius of the capillary and quartic dependence on the dimensionless marginal zone thickness. The apparent of viscosity of the blood is expressed as a function of the ratio of the core layer viscosity and the plasma layer viscosity. In order to back out a marginal zone thickness from a given set of information, the Charm and Kurland expression (1974) for the viscosity and hematocrit variation and the temperature dependence parameter of the hematocrit alpha can be used to develop two transcendental equations and two un! knowns. This is the recommended procedure us...

Oxide thickness measurement technique for duplex-layer Zircaloy-4 cladding

International Nuclear Information System (INIS)

McClelland, R.G.; O'Leary, P.M.

1992-01-01

Siemens Nuclear Power Corporation (SNP) is investigating the use of duplex-layer Zircaloy-4 tubing to improve the waterside corrosion resistance of cladding for high-burnup pressurized water reactor (PWR) fuel designs. Standard SNP PWR cladding is typically 0.762-mm (0.030-in.)-thick Zircaloy-4. The SNP duplex cladding is nominally 0.660-mm (0.026-in.)-thick Zircalloy-4 with an ∼0.102-mm (0.004-in.) outer layer of another, more corrosion-resistant, zirconium-based alloy. It is common industry practice to monitor the in-reactor corrosion behavior of Zircaloy cladding by using an eddy-current 'lift-off' technique to measure the oxide thickness on the outer surface of the fuel cladding. The test program evaluated three different cladding samples, all with the same outer diameter and wall thickness: Zircaloy-4 and duplex clad types D2 and D4

Thermal stability of double-ceramic-layer thermal barrier coatings with various coating thickness

International Nuclear Information System (INIS)

Dai Hui; Zhong Xinghua; Li Jiayan; Zhang Yanfei; Meng Jian; Cao Xueqiang

2006-01-01

Double-ceramic-layer (DCL) coatings with various thickness ratios composed of YSZ (6-8 wt.% Y 2 O 3 + ZrO 2 ) and lanthanum zirconate (LZ, La 2 Zr 2 O 7 ) were produced by the atmospheric plasma spraying. Chemical stability of LZ in contact with YSZ in DCL coatings was investigated by calcining powder blends at different temperatures. No obvious reaction was observed when the calcination temperature was lower than 1250 deg. C, implying that LZ and YSZ had good chemical applicability for producing DCL coating. The thermal cycling test indicate that the cycling lives of the DCL coatings are strongly dependent on the thickness ratio of LZ and YSZ, and the coatings with YSZ thickness between 150 and 200 μm have even longer lives than the single-layer YSZ coating. When the YSZ layer is thinner than 100 μm, the DCL coatings failed in the LZ layer close to the interface of YSZ layer and LZ layer. For the coatings with the YSZ thickness above 150 μm, the failure mainly occurs at the interface of the YSZ layer and the bond coat

Variations of retinal nerve fiber layer thickness and ganglion cell-inner plexiform layer thickness according to the torsion direction of optic disc.

Science.gov (United States)

Lee, Kang Hoon; Kim, Chan Yun; Kim, Na Rae

2014-02-20

To examine the relationship between the optic disc torsion and peripapillary retinal nerve fiber layer (RNFL) thickness through a comparison with the macular ganglion cell inner plexiform layer complex (GCIPL) thickness measured by Cirrus optical coherence tomography (OCT). Ninety-four eyes of 94 subjects with optic disc torsion and 114 eyes of 114 subjects without optic disc torsion were enrolled prospectively. The participants underwent fundus photography and OCT imaging in peripapillary RNFL mode and macular GCIPL mode. The participants were divided into groups according to the presence or absence of optic disc torsion. The eyes with optic disc torsion were further divided into supranasal torsion and inferotemporal torsion groups according to the direction of optic disc torsion. The mean RNFL and GCIPL thicknesses for the quadrants and subsectors were compared. The superior and inferior peak locations of the RNFL were also measured according to the torsion direction. The temporal RNFL thickness was significantly thicker in inferotemporal torsion, whereas the GCIPL thickness at all segments was unaffected. The inferotemporal optic torsion had more temporally positioned superior peak locations of the RNFL than the nontorsion and supranasal-torted optic disc. Thickening of the temporal RNFL with a temporal shift in the superior peak within the eyes with inferotemporal optic disc torsion can lead to interpretation errors. The ganglion cell analysis algorithm can assist in differentiating eyes with optic disc torsion.

Quantification of retinal layer thickness changes in acute macular neuroretinopathy

DEFF Research Database (Denmark)

Munk, Marion R.; Beck, Marco; Kolb, Simone

2017-01-01

Purpose To quantitatively evaluate retinal layer thickness changes in acute macular neuroretinopathy (AMN). Methods AMN areas were identified using near-infrared reflectance (NIR) images. Intraretinal layer segmentation using Heidelberg software was performed. The inbuilt ETDRS -grid was moved on...

Survey of Nerve Fiber Layer Thickness in Anisometropic and Strabismic Amblyopia

Directory of Open Access Journals (Sweden)

Reza Soltani Moghaddam

2017-02-01

Full Text Available . To investigate the effect of anisometropic and strabismic amblyopia on the nerve fiber layer thickness. This cross-sectional study was done on 54 amblyopic subjects, equally in both strabismic and anisometropic groups. The thickness otonerve fiber layer measured in superior, inferior, nasal, temporal quadrants and as a whole in both eyes of both groups. The means of thickness were compared in amblyopic and sound eyes. In strabismus group, the average nerve fiber layer thickness of the sound eye , in superior, inferior, nasal and temporal quadrants and as a whole were 113.23±14, 117.37±25, 68.96±6, 69.55±14 and 93.40±8 microns respectively. In amblyopic eyes of the same group, these measurements were 103.11±18, 67.74±11, and 69.59±16 and 89.59±12 microns in superior, inferior, nasal, temporal quadrants and as whole respectively. In anisometropic groups, the sound eye measurements were as 130.96±22, 129.07±29, 80.62±12, and 83.88±20 and 107.7±13 microns in superior, inferior, nasal and temporal quadrants and as a whole orderly. In amblyopic eyes of this group the mean thicknesses were 115.63±29, 133.15±25, 78.8±15, 80.2±16 and 109.17±21 microns in superior, inferior, nasal, temporal quadrants and as a whole respectively. Statistically, there were no significant differences between amblyopic and sound eyes (P>0.5. Our study did not support any significant change in a nerve fiber layer thickness of amblyopic patients; however, decreased thickness in superior and nasal quadrants of strabismic amblyopia and except inferior quadrant and as a whole. These measurements may be a clue for management and prognosis of amblyopia in old age.

Optimized spacer layer thickness for plasmonic-induced enhancement of photocurrent in a-Si:H

Energy Technology Data Exchange (ETDEWEB)

Saleh, Z. M., E-mail: zaki.saleh@aauj.edu, E-mail: zakimsaleh@yahoo.com; Nasser, H.; Özkol, E.; Günöven, M.; Abak, K. [Middle East Technical University, Center for Solar Energy Research and Applications (GÜNAM) (Turkey); Canli, S. [Middle East Technical University, Central Laboratory (Turkey); Bek, A.; Turan, R. [Middle East Technical University, Center for Solar Energy Research and Applications (GÜNAM) (Turkey)

2015-10-15

Plasmonic interfaces consisting of silver nanoparticles of different sizes (50–100 nm) have been processed by the self-assembled dewetting technique and integrated to hydrogenated amorphous silicon (a-Si:H) using SiNx spacer layers to investigate the dependence of optical trapping enhancement on spacer layer thickness through the enhancements in photocurrent. Samples illuminated from the a-Si:H side exhibit a localized surface plasmon resonance (LSPR) that is red-shifted with the increasing particle size and broadened into the red with the increasing spacer layer thickness. The photocurrent measured in a-Si:H is not only consistent with the red-shift and broadening of the LSPR, but exhibits critical dependence on the spacer layer thickness also. The samples with plasmonic interfaces and a SiNx spacer layer exhibit appreciable enhancement of photocurrent compared with flat a-Si:H reference depending on the size of the Ag nanoparticle. Simulations conducted on one-dimensional square structures exhibit electric fields that are localized near the plasmonic structures but extend appreciably into the higher refractive index a-Si:H. These simulations produce a clear red-shift and broadening of extinction spectra for all spacer layer thicknesses and predict an enhancement in photocurrent in agreement with experimental results. The spectral dependence of photocurrent for six plasmonic interfaces with different Ag nanoparticle sizes and spacer layer thicknesses are correlated with the optical spectra and compared with the simulations to predict an optimal spacer layer thickness.

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

Energy Technology Data Exchange (ETDEWEB)

Hutchinson, David [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Department of Physics and Nuclear Engineering, United States Military Academy, West Point NY 10996 (United States); Mathews, Jay [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States); Department of Physics, University of Dayton, Dayton, OH 45469 (United States); Sullivan, Joseph T.; Buonassisi, Tonio [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Akey, Austin [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Aziz, Michael J. [Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Persans, Peter [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Warrender, Jeffrey M., E-mail: jwarrend@post.harvard.edu [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States)

2016-05-15

We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

Directory of Open Access Journals (Sweden)

David Hutchinson

2016-05-01

Full Text Available We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

Comparisons of retinal nerve fiber layer thickness changes after macular hole surgery

Directory of Open Access Journals (Sweden)

Nelson Chamma Capelanes

Full Text Available ABSTRACT Purpose: To compare postoperative changes in retinal nerve fiber layer thickness in patients with macular holes treated with vitrectomy with Brilliant Blue-assisted internal limiting membrane peeling. Methods: Twenty-two eyes of 20 patients with macular holes were studied. Each eye was selected to undergo Brilliant Blue-assisted internal limiting membrane peeling. The circumferential retinal nerve fiber layer thickness was determined using spectral domain optical coherence tomography preoperatively and 2 months postoperatively. Mean overall and sectoral retinal nerve fiber layer thicknesses were obtained for each patient. Results: There was no statistically significant difference (p≥0.05 between the pre- and post-treatment measurements in relation to each CFN variable, i.e., on average, pre-treatment measures were the same as post-treatment measures. Furthermore, despite the differences between the pre- and post-treatment measures always being positive (pre-post >0, they are not statistically significant. Conclusions: This study showed no significant decrease in retinal nerve fiber layer thickness measurements after macular holes surgery, regardless of age or sex.

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

Science.gov (United States)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

Simple electrodepositing of CoFe/Cu multilayers: Effect of ferromagnetic layer thicknesses

Energy Technology Data Exchange (ETDEWEB)

Tekgül, Atakan, E-mail: atakantekgul@gmail.com [Akdeniz University, Physics Department, Science Faculty, TR-07058 Antalya (Turkey); Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Alper, Mürsel [Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Kockar, Hakan [Balikesir University, Physics Department, Science and Literature Faculty, TR-10145 Balikesir (Turkey)

2017-01-01

The CoFe/Cu magnetic multilayers were produced by changing CoFe ferromagnetic layers from 3 nm to 10 nm using electrodeposition. By now, the thinnest Cu (0.5 nm) layer thicknesses were used to see whether the GMR effect in the multilayers can be obtained or not since the pinning of non-magnetic layer between the ferromagnetic layers is required. For the proper depositions, the cyclic voltammograms was used, and the current–time transients were obtained. The Cu and CoFe layers were deposited at a cathode potential of −0.3 and −1.5 V with respect to saturated calomel electrode, respectively. From the XRD patterns, the multilayers were shown to be fcc crystal structures. For the magnetization measurements, saturation magnetization increases from 160 to 600 kA/m from 3 to 8 nm ferromagnetic layer thicknesses. And, the coercivity values increase until the 8 nm of the CoFe layer thickness. It is seen that the thin Cu layer (fixed at 0.5 nm) and pinholes support the random magnetization orientation and thus all multilayers exhibited the giant magnetoresistance (GMR) effect, and the highest GMR value was observed about 5.5%. And, the variation of GMR field sensitivity was calculated. The results show that the GMR and GMR sensitivity are compatible among the multilayers. The CoFe/Cu magnetic multilayers having GMR properties are used in GMR sensors and hard disk drive of the nano-technological devices. - Highlights: • The much thinner (0.5 nm) Cu layer was used to obtain the GMR effect on the electrodeposited CoFe/Cu multilayers. • All samples exhibited GMR and the maximum GMR value was 5.5%. • The M{sub s} and the H{sub c} changed with increasing magnetic layer thickness.

The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

International Nuclear Information System (INIS)

Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

2013-01-01

The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

Top layer's thickness dependence on total electron-yield X-ray standing-wave

International Nuclear Information System (INIS)

Ejima, Takeo; Yamazaki, Atsushi; Banse, Takanori; Hatano, Tadashi

2005-01-01

A Mo single-layer film with a stepwise thickness distribution was fabricated on the same Mo/Si reflection multilayer film. Total electron-yield X-ray standing-wave (TEY-XSW) spectra of the aperiodic multilayer were measured with reflection spectra. The peak positions of the standing waves in the TEY-XSW spectra changed as the film thickness of the top Mo-layer increased

Prediction of Layer Thickness in Molten Borax Bath with Genetic Evolutionary Programming

Science.gov (United States)

Taylan, Fatih

2011-04-01

In this study, the vanadium carbide coating in molten borax bath process is modeled by evolutionary genetic programming (GEP) with bath composition (borax percentage, ferro vanadium (Fe-V) percentage, boric acid percentage), bath temperature, immersion time, and layer thickness data. Five inputs and one output data exist in the model. The percentage of borax, Fe-V, and boric acid, temperature, and immersion time parameters are used as input data and the layer thickness value is used as output data. For selected bath components, immersion time, and temperature variables, the layer thicknesses are derived from the mathematical expression. The results of the mathematical expressions are compared to that of experimental data; it is determined that the derived mathematical expression has an accuracy of 89%.

Predicting the Equilibrium Deuterium-Tritium Fuel Layer Thickness Profile in an Indirect-Drive Hohlraum Capsule

International Nuclear Information System (INIS)

Sanchez, Jorge J.; Giedt, Warren H.

2004-01-01

A numerical procedure for calculating the equilibrium thickness distribution of a thin layer of deuterium and tritium on the inner surface of an indirect drive target sphere (∼2.0 mm in diameter) is described. Starting with an assumed uniform thickness layer and with specified thermal boundary conditions, the temperature distribution throughout the capsule and hohlraum (including natural convection in the hohlraum gas) is calculated. Results are used to make a first estimate of the final non-uniform thickness distribution of the layer. This thickness distribution is then used to make a second calculation of the temperature distribution with the same boundary conditions. Legendre polynomial coefficients are evaluated for the two temperature distributions and the two thickness profiles. Final equilibrium Legendre coefficients are determined by linear extrapolation. From these coefficients, the equilibrium layer thickness can be computed

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

Science.gov (United States)

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

KAUST Repository

Alhashim, Hala H.; Khan, Mohammed Zahed Mustafa; Majid, Mohammed Abdul; Ng, Tien Khee; Ooi, Boon S.

2015-01-01

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting

Enhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layer

International Nuclear Information System (INIS)

Ghobadi, Amir; Yavuz, Halil I.; Ulusoy, T. Gamze; Icli, K. Cagatay; Ozenbas, Macit; Okyay, Ali K.

2015-01-01

In this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO 2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed

Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

Science.gov (United States)

Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

2014-04-01

Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

Asymmetric transmission of acoustic waves in a layer thickness distribution gradient structure using metamaterials

Directory of Open Access Journals (Sweden)

Jung-San Chen

2016-09-01

Full Text Available This research presents an innovative asymmetric transmission design using alternate layers of water and metamaterial with complex mass density. The directional transmission behavior of acoustic waves is observed numerically inside the composite structure with gradient layer thickness distribution and the rectifying performance of the present design is evaluated. The layer thickness distributions with arithmetic and geometric gradients are considered and the effect of gradient thickness on asymmetric wave propagation is systematically investigated using finite element simulation. The numerical results indicate that the maximum pressure density and transmission through the proposed structure are significantly influenced by the wave propagation direction over a wide range of audible frequencies. Tailoring the thickness of the layered structure enables the manipulation of asymmetric wave propagation within the desired frequency range. In conclusion, the proposed design offers a new possibility for developing directional-dependent acoustic devices.

Impacts of age and sex on retinal layer thicknesses measured by spectral domain optical coherence tomography with Spectralis.

Science.gov (United States)

Nieves-Moreno, María; Martínez-de-la-Casa, José M; Morales-Fernández, Laura; Sánchez-Jean, Rubén; Sáenz-Francés, Federico; García-Feijoó, Julián

2018-01-01

To examine differences in individual retinal layer thicknesses measured by spectral domain optical coherence tomography (SD-OCT) (Spectralis®) produced with age and according to sex. Cross-sectional, observational study. The study was conducted in 297 eyes of 297 healthy subjects aged 18 to 87 years. In one randomly selected eye of each participant the volume and mean thicknesses of the different macular layers were measured by SD-OCT using the instrument's macular segmentation software. Volume and mean thickness of macular retinal nerve fiber layer (mRNFL), ganglion cell layer (GCL), inner plexiform layer (IPL), inner nuclear layer (INL), outer plexiform layer (OPL), outer nuclear layer (ONL), retinal pigmentary epithelium (RPE) and photoreceptor layer (PR). Retinal thickness was reduced by 0.24 μm for every one year of age. Age adjusted linear regression analysis revealed mean GCL, IPL, ONL and PR thickness reductions and a mean OPL thickness increase with age. Women had significantly lower mean GCL, IPL, INL, ONL and PR thicknesses and volumes and a significantly greater mRNFL volume than men. The thickness of most retinal layers varies both with age and according to sex. Longitudinal studies are needed to determine the rate of layer thinning produced with age.

Thickness optimization of the ZnO based TCO layer in a CZTSSe solar cell. Evolution of its performance with thickness when external temperature changes.

Science.gov (United States)

Chadel, Meriem; Moustafa Bouzaki, Mohammed; Chadel, Asma; Aillerie, Michel; Benyoucef, Boumediene

2017-07-01

The influence of the thickness of a Zinc Oxide (ZnO) transparent conductive oxide (TCO) layer on the performance of the CZTSSe solar cell is shown in detail. In a photovoltaic cell, the thickness of each layer largely influence the performance of the solar cell and optimization of each layer constitutes a complete work. Here, using the Solar Cell Capacitance Simulation (SCAPS) software, we present simulation results obtained in the analyze of the influence of the TCO layer thickness on the performance of a CZTSSe solar cell, starting from performance of a CZTSSe solar cell commercialized in 2014 with an initial efficiency equal to 12.6%. In simulation, the temperature was considered as a functioning parameter and the evolution of tthe performance of the cell for various thickness of the TCO layer when the external temperature changes is simulated and discussed. The best efficiency of the solar cell based in CZTSSe is obtained with a ZnO thickness equal to 50 nm and low temperature. Based on the considered marketed cell, we show a technological possible increase of the global efficiency achieving 13% by optimization of ZnO based TCO layer.

Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence

Science.gov (United States)

Herz, Andreas; Theska, Felix; Rossberg, Diana; Kups, Thomas; Wang, Dong; Schaaf, Peter

2018-06-01

In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 °C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 °C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.

Human Chorioretinal Layer Thicknesses Measured in Macula-wide, High-Resolution Histologic Sections

Science.gov (United States)

Messinger, Jeffrey D.; Sloan, Kenneth R.; Mitra, Arnab; McGwin, Gerald; Spaide, Richard F.

2011-01-01

Purpose. To provide a comprehensive description of chorioretinal layer thicknesses in the normal human macula, including two-layer pairs that can produce a combined signal in some optical coherence tomography (OCT) devices (ganglion cell [GCL] and inner plexiform [IPL] layers and outer plexiform [OPL] and outer nuclear [ONL] layers). Methods. In 0.8-μm-thick, macula-wide sections through the foveola of 18 donors (age range, 40–92 years), 21 layers were measured at 25 locations by a trained observer and validated by a second observer. Tissue volume changes were assessed by comparing total retinal thickness in ex vivo OCT and in sections. Results. Median tissue shrinkage was 14.5% overall and 29% in the fovea. Histologic laminar boundaries resembled those in SD-OCT scans, but the shapes of the foveolar OPL and ONL differed. Histologic GCL, IPL, and OPLHenle were thickest at 0.8. to 1, 1.5, and 0.4 mm eccentricity, respectively. ONL was thickest in an inward bulge at the foveal center. At 1 mm eccentricity, GCL, INL, and OPLHenle represented 17.3% to 21.1%, 18.0% to 18.5%, and 14.2% to 16.6% of total retinal thickness, respectively. In donors ≥70 years of age, the RPE and choroid were 17.1% and 29.6% thinner and OPLHenle was 20.8% thicker than in donors macula were generated. Newer OCT systems can separate GCL from IPL and OPLHenle from ONL, with good agreement for the proportion of retinal thickness occupied by OPLHenle in OCT and histology. The thickening of OPLHenle in older eyes may reflect Müller cell hypertrophy associated with rod loss. PMID:21421869

Formation of nickel germanides from Ni layers with thickness below 10 nm

Energy Technology Data Exchange (ETDEWEB)

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel; Abedin, Ahmad; Hellström, Per-Erik; Östling, Mikael; Jordan-Sweet, Jean; Lavoie, Christian; Zhang, Shi-Li; Zhang, Zhen

2017-03-01

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5 nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness

Ultrasound-based measurement of liquid-layer thickness: A novel time-domain approach

Science.gov (United States)

Praher, Bernhard; Steinbichler, Georg

2017-01-01

Measuring the thickness of a thin liquid layer between two solid materials is important when the adequate separation of metallic parts by a lubricant film (e.g., in bearings or mechanical seals) is to be assessed. The challenge in using ultrasound-based systems for such measurements is that the signal from the liquid layer is a superposition of multiple reflections. We have developed an algorithm for reconstructing this superimposed signal in the time domain. By comparing simulated and measured signals, the time-of-flight of the ultrasonic pulse in a layer can be estimated. With the longitudinal sound velocity known, the layer thickness can then be calculated. In laboratory measurements, we validate successfully (maximum relative error 4.9%) our algorithm for layer thicknesses ranging from 30 μm to 200 μm. Furthermore, we tested our method in the high-temperature environment of polymer processing by measuring the clearance between screw and barrel in the plasticisation unit of an injection moulding machine. The results of such measurements can indicate (i) the wear status of the tribo-mechanical screw-barrel system and (ii) unsuitable process conditions.

Compensation of propagation loss of surface plasmon polaritons with a finite-thickness dielectric gain layer

International Nuclear Information System (INIS)

Zhang, Xin; Liu, Haitao; Zhong, Ying

2012-01-01

We theoretically study the compensation of propagation loss of surface plasmon polaritons (SPPs) with the use of a finite-thickness dielectric layer with optical gain. The impacts of the gain coefficient, the gain-layer thickness and the wavelength on the loss compensation and the field distribution of the SPP mode are systematically explored with a fully vectorial method. Abnormal behaviors for the loss compensation as the gain-layer thickness increases are found and explained. Critical values of the gain coefficient and of the corresponding gain-layer thickness for just compensating the propagation loss are provided. Our results show that as the SPP propagation loss is fully compensated with a gain coefficient at a reasonably low level, the gain layer is still thin enough to ensure a large exterior SPP field at the gain-layer/air interface, which is important for achieving a strong light–matter interaction for applications such as bio-chemical sensing. (paper)

Scanning laser polarimetry retinal nerve fiber layer thickness measurements after LASIK.

Science.gov (United States)

Zangwill, Linda M; Abunto, Teresa; Bowd, Christopher; Angeles, Raymund; Schanzlin, David J; Weinreb, Robert N

2005-02-01

To compare retinal nerve fiber layer (RNFL) thickness measurements before and after LASIK. Cohort study. Twenty participants undergoing LASIK and 14 normal controls. Retinal nerve fiber layer thickness was measured before LASIK and approximately 3 months after surgery in one eye each of 20 patients using a scanning laser polarimeter (GDx Nerve Fiber Analyzer) with fixed corneal compensation (FCC), one with variable corneal compensation (GDx VCC), and optical coherence tomography (OCT). Fourteen normal controls also were tested at baseline and approximately 3 months later. Retinal nerve fiber layer thicknesses measured with the GDx FCC, GDx VCC, and OCT. At baseline, mean (95% confidence interval [CI]) RNFL thicknesses for the GDx FCC, GDx VCC, and OCT were 78.1 microm (72.2-83.9), 54.3 microm (52.7-56.0), and 96.8 microm (93.2-100.5), respectively. In both LASIK and control groups, there were no significant changes between baseline and follow-up examinations in GDx VCC and OCT RNFL thickness measurements globally or in the superior and inferior quadrants (mean change, FCC measurements between baseline and follow-up. In LASIK patients, significant reductions were observed in GDx FCC RNFL measurements. Average absolute values of the mean (95% CI) change in thickness were 12.4 microm (7.7-17.2), 15.3 microm (9.6-20.9), and 12.9 microm (7.6-18.1) for GDx FCC RNFL measurements superiorly, inferiorly, and globally, respectively (all Ps FCC RNFL thickness measurements after LASIK is a measurement artifact and is most likely due to erroneous compensation for corneal birefringence. With scanning laser polarimetry, it is mandatory to compensate individually for change in corneal birefringence after LASIK to ensure accurate RNFL assessment.

Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

DEFF Research Database (Denmark)

Xu, Zhang-Cheng; Zhang, Ya-Ting; Hvam, Jørn Märcher

2009-01-01

The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which...

Simultaneous analysis of Grazing Incidence X-Ray reflectivity and X-ray standing waves from periodic multilayer systems

NARCIS (Netherlands)

Yakunin, S.N.; Makhotkin, Igor Alexandrovich; Chuyev, M.A.; Seregin, A.Y.; Pashayev, E.M.; Louis, Eric; van de Kruijs, Robbert Wilhelmus Elisabeth; Bijkerk, Frederik; Kovalchuk, M.V.

2012-01-01

Structural analysis of periodic multilayers with small period thickness (~4 nm) is a challenging task, especially when thicknesses of intermixed interfaces become comparable to individual layer thicknesses. In general, angular dependent X-ray fluorescence measurements, excited by the X-ray standing

Hydrodynamic thickness of petroleum oil adsorbed layers in the pores of reservoir rocks.

Science.gov (United States)

Alkafeef, Saad F; Algharaib, Meshal K; Alajmi, Abdullah F

2006-06-01

The hydrodynamic thickness delta of adsorbed petroleum (crude) oil layers into the pores of sandstone rocks, through which the liquid flows, has been studied by Poiseuille's flow law and the evolution of (electrical) streaming current. The adsorption of petroleum oil is accompanied by a numerical reduction in the (negative) surface potential of the pore walls, eventually stabilizing at a small positive potential, attributed to the oil macromolecules themselves. After increasing to around 30% of the pore radius, the adsorbed layer thickness delta stopped growing either with time or with concentrations of asphaltene in the flowing liquid. The adsorption thickness is confirmed with the blockage value of the rock pores' area determined by the combination of streaming current and streaming potential measurements. This behavior is attributed to the effect on the disjoining pressure across the adsorbed layer, as described by Derjaguin and Churaev, of which the polymolecular adsorption films lose their stability long before their thickness has approached the radius of the rock pore.

The measurement of layer thickness by the deconvolution of ultrasonic signals

International Nuclear Information System (INIS)

McIntyre, P.J.

1977-07-01

An ultrasonic technique for measuring layer thickness, such as oxide on corroded steel, is described. A time domain response function is extracted from an ultrasonic signal reflected from the layered system. This signal is the convolution of the input signal with the response function of the layer. By using a signal reflected from a non-layered surface to represent the input, the response function may be obtained by deconvolution. The advantage of this technique over that described by Haines and Bel (1975) is that the quality of the results obtained using their method depends on the ability of a skilled operator in lining up an arbitrary common feature of the signals received. Using deconvolution no operator manipulations are necessary and so less highly trained personnel may successfully make the measurements. Results are presented for layers of araldite on aluminium and magnetite of steel. The results agreed satisfactorily with predictions but in the case of magnetite, its high velocity of sound meant that thicknesses of less than 250 microns were difficult to measure accurately. (author)

Photoacoustic signal attenuation analysis for the assessment of thin layers thickness in paintings

Science.gov (United States)

Tserevelakis, George J.; Dal Fovo, Alice; Melessanaki, Krystalia; Fontana, Raffaella; Zacharakis, Giannis

2018-03-01

This study introduces a novel method for the thickness estimation of thin paint layers in works of art, based on photoacoustic signal attenuation analysis (PAcSAA). Ad hoc designed samples with acrylic paint layers (Primary Red Magenta, Cadmium Yellow, Ultramarine Blue) of various thicknesses on glass substrates were realized for the specific application. After characterization by Optical Coherence Tomography imaging, samples were irradiated at the back side using low energy nanosecond laser pulses of 532 nm wavelength. Photoacoustic waves undergo a frequency-dependent exponential attenuation through the paint layer, before being detected by a broadband ultrasonic transducer. Frequency analysis of the recorded time-domain signals allows for the estimation of the average transmitted frequency function, which shows an exponential decay with the layer thickness. Ultrasonic attenuation models were obtained for each pigment and used to fit the data acquired on an inhomogeneous painted mock-up simulating a real canvas painting. Thickness evaluation through PAcSAA resulted in excellent agreement with cross-section analysis with a conventional brightfield microscope. The results of the current study demonstrate the potential of the proposed PAcSAA method for the non-destructive stratigraphic analysis of painted artworks.

Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

Energy Technology Data Exchange (ETDEWEB)

Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

2014-10-15

We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.

Influence of strain on the growth of thick InGaN layers

International Nuclear Information System (INIS)

Stellmach, J.; Leyer, M.; Pristovsek, M.; Kneissl, M.

2008-01-01

The growth of high quality InGaN alloys is critical for a number of various optoelectronic device applications like LEDs and laser diodes. Nevertheless, the exact growth mechanisms of InGaN with high indium content is still not fully understood. In the present study the growth of thick InGaN layers was systematically investigated. InGaN films with thicknesses between ∝35 nm and ∝200 nm were grown on GaN templates with metal-organic vapour phase epitaxy (MOVPE). The group III partial pressures of 1.1 Pa for TMGa, 0.45 Pa for TMIn and the V/III-ratio of 1600 were kept constant. The growth temperature was varied between 750 C and 800 C. The growth of InGaN layer was characterized by in-situ spectroscopic ellipsometry (SE). Up to temperatures of 790 C structural analysis by XRD showed two strained layers with different indium content. The formation of the layer structure was investigated by varying the growth times at 770 C. In the first 500 s (35 nm) a rough (rms=9 nm) and pseudomorphically strained InGaN layer with low indium content (4%) is formed. Between 500 s and 1000 s this strained layer becomes smoother (rms=3.4 nm). For thicknesses beyond the In content increases (8% at 84 nm) and reaches 11% at 200 nm. We propose that the transition from a first layer with a low indium content to a second layer with an higher indium content is due to a gradual release of strain

Leaping shampoo glides on a 500-nm-thick lubricating air layer

Science.gov (United States)

Li, Erqiang; Lee, Sanghyun; Marston, Jeremy; Bonito, Andrea; Thoroddsen, Sigurdur

2013-11-01

When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer [Lee et al., Phys. Rev. E 87, 061001 (2013)]. We identify this layer by looking through the pool liquid and observing its rupture into fine micro-bubbles. The resulting micro-bubble sizes suggest that the thickness of this air layer is around 500 nm. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding, with the shear stress within the thin air layer sufficient for the observed deceleration. Particle tracking within the jet shows uniform velocity, with no pronounced shear, which would be required for shear-thinning effects. The role of the surfactant may primarily be to stabilize the air film.

Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

International Nuclear Information System (INIS)

Rosikhin, Ahmad; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

2015-01-01

Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO 2 in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO 2 layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices

Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

Energy Technology Data Exchange (ETDEWEB)

Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto, E-mail: toto@fi.itb.ac.id [Department of physics, physics of electronic materials research division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesha 10, Bandung 40132, Jawa Barat – Indonesia (Indonesia)

2015-12-29

Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

International Nuclear Information System (INIS)

Gao, Xu; Mao, Bao-Hua; Wang, Sui-Dong; Lin, Meng-Fang; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Tsukagoshi, Kazuhito; Nabatame, Toshihide; Liu, Zhi

2017-01-01

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O 2 /air. The device with a thick IGZO layer shows similar electron mobility in O 2 /air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O 2 /air due to the electron transfer to adsorbed gas molecules. The O 2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results. (paper)

Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

2008-01-01

Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...... with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer....

Suppression of the two-dimensional electron gas in LaGaO3/SrTiO3 by cation intermixing

KAUST Repository

Nazir, S.

2013-12-03

Cation intermixing at the n-type polar LaGaO 3 /SrTiO 3 (001) interface is investigated by first principles calculations. Ti"Ga, Sr"La, and SrTi"LaGa intermixing are studied in comparison to each other, with a focus on the interface stability. We demonstrate in which cases intermixing is energetically favorable as compared to a clean interface. A depopulation of the Ti 3d xy orbitals under cation intermixing is found, reflecting a complete suppression of the two-dimensional electron gas present at the clean interface.

Localization in superlattices with randomness in layer thickness

International Nuclear Information System (INIS)

Yuan Jian; Tsai Chienhua.

1987-08-01

The localization length for electrons in superlattices with randomness in layer thickness is studied in both the commensurate and the incommensurate cases. It is demonstrated that disorder limits the electrons to see only structures within the extent of their wave functions and to be hardly effected by any long range correlation. (author). 4 refs, 6 figs

On determining dead layer and detector thicknesses for a position-sensitive silicon detector

Science.gov (United States)

Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

2018-04-01

In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

Intermediate layer thickness dependence on switching field distribution in perpendicular recording media

International Nuclear Information System (INIS)

Sbiaa, R.; Gandhi, R.; Srinivasan, K.; Piramanayagam, S.N.; Seoh, R.M.

2009-01-01

The effect of intermediate layer (IL) thickness on crystallographic texture and magnetic properties of CoCrPtSiO 2 granular perpendicular recording media was investigated with switching field distribution (SFD) as the focus. Even though the c-axis orientation of the Co-based recording layer (RL) broadens with the reduction of IL thickness, the SFD becomes narrower. This result demonstrates that the intrinsic SFD is not directly dependent on c-axis orientation of the recording layer but instead dependent on the magnitude of exchange coupling. It is thus possible to have a medium with thin IL and narrow SFD. This is desirable for bit-patterned media (BPM), where highly exchange-coupled grains are required.

Thickness dependence of the levitation performance of double-layer high-temperature superconductor bulks above a magnetic rail

International Nuclear Information System (INIS)

Sun, R.X.; Zheng, J.; Liao, X.L.; Che, T.; Gou, Y.F.; He, D.B.; Deng, Z.G.

2014-01-01

Highlights: • Thickness optimization of double-layer bulk HTSC arrangement is studied. • The new bulk HTSC arrangement makes better use of the flux distribution of the magnetic rails. • Levitation performance can be enhanced with the optimization. • The optimization can meet large levitation force requirements for HTS Maglev system. - Abstract: A double-layer high-temperature superconductor (HTSC) arrangement was proposed and proved to be able to bring improvements to both levitation force and guidance force compared with present single-layer HTSC arrangement. To fully exploit the applied magnetic field by a magnetic rail, the thickness dependence of a double-layer HTSC arrangement on the levitation performance was further investigated in the paper. In this study, the lower-layer bulk was polished step by step to different thicknesses, and the upper-layer bulk with constant thickness was directly superimposed on the lower-layer one. The levitation force and the force relaxation of the double-layer HTSC arrangement were measured above a Halbach magnetic rail. Experimental result shows that a bigger levitation force and a less levitation force decay could be achieved by optimizing the thickness of the lower-layer bulk HTSC. This thickness optimization method could be applied together with former reported double-layer HTSC arrangement method with aligned growth sector boundaries pattern. This series of study on the optimized combination method do bring a significant improvement on the levitation performance of present HTS maglev systems

Thickness dependence of the levitation performance of double-layer high-temperature superconductor bulks above a magnetic rail

Energy Technology Data Exchange (ETDEWEB)

Sun, R.X.; Zheng, J.; Liao, X.L.; Che, T.; Gou, Y.F.; He, D.B.; Deng, Z.G., E-mail: zgdeng@gmail.com

2014-10-15

Highlights: • Thickness optimization of double-layer bulk HTSC arrangement is studied. • The new bulk HTSC arrangement makes better use of the flux distribution of the magnetic rails. • Levitation performance can be enhanced with the optimization. • The optimization can meet large levitation force requirements for HTS Maglev system. - Abstract: A double-layer high-temperature superconductor (HTSC) arrangement was proposed and proved to be able to bring improvements to both levitation force and guidance force compared with present single-layer HTSC arrangement. To fully exploit the applied magnetic field by a magnetic rail, the thickness dependence of a double-layer HTSC arrangement on the levitation performance was further investigated in the paper. In this study, the lower-layer bulk was polished step by step to different thicknesses, and the upper-layer bulk with constant thickness was directly superimposed on the lower-layer one. The levitation force and the force relaxation of the double-layer HTSC arrangement were measured above a Halbach magnetic rail. Experimental result shows that a bigger levitation force and a less levitation force decay could be achieved by optimizing the thickness of the lower-layer bulk HTSC. This thickness optimization method could be applied together with former reported double-layer HTSC arrangement method with aligned growth sector boundaries pattern. This series of study on the optimized combination method do bring a significant improvement on the levitation performance of present HTS maglev systems.

Thickness and composition of ultrathin SiO2 layers on Si

NARCIS (Netherlands)

van der Marel, C; Verheijen, M.A.; Tamminga, Y; Pijnenburg, RHW; Tombros, N; Cubaynes, F

2004-01-01

Ultrathin SiO2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it

Exchange bias variations of the seed and top NiFe layers in NiFe/FeMn/NiFe trilayer as a function of seed layer thickness

International Nuclear Information System (INIS)

Sankaranarayanan, V.K.; Yoon, S.M.; Kim, C.G.; Kim, C.O.

2005-01-01

Development of exchange bias at the seed and top NiFe layers in the NiFe (t nm)/FeMn(10 nm)/NiFe(5 nm) trilayer structure is investigated as a function of seed layer thickness, in the range of 2-20 nm. The seed NiFe layer shows maximum exchange bias at 4 nm seed layer thickness. The bias shows inverse thickness dependence with increasing thickness. The top NiFe layer on the other hand shows only half the bias of the seed layer which is retained even after the sharp fall in seed layer bias. The much smaller bias for the top NiFe layer is related to the difference in crystalline texture and spin orientations at the top FeMn/NiFe interface, in comparison to the bottom NiFe/FeMn interface which grows on a saturated NiFe layer with (1 1 1) orientation

Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers

CERN Document Server

Nohavica, D; Zdansky, K

1999-01-01

We report on liquid-phase epitaxial growth of thick layers of GaInP(As), lattice matched to GaAs. Layers with thicknesses up to 10 mu m were prepared in a multi-melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from moderate purity starting materials, show a significant decrease in the residual impurity level when erbium is added to the melt. Fundamental electrical and optical properties of the layers were investigated. (author)

Ellipsometry measurements of thickness of oxide and water layers on spherical and flat silicon surfaces

International Nuclear Information System (INIS)

Kenny, M.J.; Netterfield, R.; Wielunski, L.S.

1998-01-01

Full text: Ellipsometry has been used to measure the thickness of oxide layers on single crystal silicon surfaces, both flat and spherical and also to measure the extent of adsorption of moisture on the surface as a function of partial water vapour pressure. The measurements form part of an international collaborative project to make a precise determination of the Avogadro constant (ΔN A /N A -8 ) which will then be used to obtain an absolute definition of the kilogram, rather than one in terms of an artefact. Typically the native oxide layer on a cleaned silicon wafer is about 2 nm thick. On a polished sphere this oxide layer is typically 8 to 10 nm thick, the increased thickness being attributed to parameters related to the polishing process. Ellipsometry measurements on an 89 mm diameter polished silicon sphere at both VUW and CSIRO indicated a SiO 2 layer at 7 to 10 nm thick. It was observed that this thickness varied regularly. The crystal orientation of the sphere was determined using electron patterns generated from an electron microscope and the oxide layer was then measured through 180 arcs of great circles along (110) and (100) planes. It was observed that the thickness varied systematically with orientation. The minimum thickness was 7.4 nm at the axis (softest direction in silicon) and the greatest thickness was 9.5 nm at the axis (hardest direction in silicon). This is similar to an orientation dependent cubic pattern which has been observed to be superimposed on polished silicon spheres. At VUW, the sphere was placed in an evacuated bell jar and the ellipsometry signal was observed as the water vapour pressure was progressively increased up to saturation. The amount of water vapour adsorbed at saturation was one or two monolayers, indicating that the sphere does not wet

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

International Nuclear Information System (INIS)

Pershyn, Y.P.; Zubarev, E.N.; Kondratenko, V.V.; Sevryukova, V.A.; Kurbatova, S.V.

2011-01-01

Processes undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∝27 nm and barrier layers of CrB 2 0.3- and 0.7-nm thick within the temperature range of 420-780 K were studied by methods of small-angle X-ray reflectivity (λ=0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discussed. (orig.)

Micro-scale intermixing: a requisite for stable and synergistic co-establishment in a four-species biofilm.

Science.gov (United States)

Liu, Wenzheng; Russel, Jakob; Burmølle, Mette; Sørensen, Søren J; Madsen, Jonas S

2018-04-18

Microorganisms frequently coexist in complex multispecies communities, where they distribute non-randomly, reflective of the social interactions that occur. It is therefore important to understand how social interactions and local spatial organization influences multispecies biofilm succession. Here the localization of species pairs was analyzed in three dimensions in a reproducible four-species biofilm model, to study the impact of spatial positioning of individual species on the temporal development of the community. We found, that as the biofilms developed, species pairs exhibited distinct intermixing patterns unique to the four-member biofilms. Higher biomass and more intermixing were found in four-species biofilms compared to biofilms with fewer species. Intriguingly, in local regions within the four member biofilms where Microbacterium oxydans was scant, both biomass and intermixing of all species were lowered, compared to regions where M. oxydans was present at typical densities. Our data suggest that Xanthomonas retroflexus and M. oxydans, both low abundant biofilm-members, intermixed continuously during the development of the four-species biofilm, hereby facilitating their own establishment. In turn, this seems to have promoted distinct spatial organization of Stenotrophomonas rhizophila and Paenibacillus amylolyticus enabling enhanced growth of all four species. Here local intermixing of bacteria advanced the temporal development of a multi-species biofilm.

Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

Science.gov (United States)

Yu, Hailiang; Lu, Cheng; Tieu, A. Kiet; Li, Huijun; Godbole, Ajit; Kong, Charlie

2018-06-01

The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the 'thickness effect' during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate 'nanoporous' Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.

Measurement of oxide-layer thickness of internal granules in high-purity aluminium

International Nuclear Information System (INIS)

Takacs, S.; Ditroi, F.; Mahunka, I.

1989-01-01

Charged-particle activation analysis was used for the determination of bulk oxygen concentration in aluminium. High-purity aluminium samples and mixtures containing different amounts of alumina were irradiated by 13 MeV 3 He particles. The aim of the investigation was to determine the oxide-layer thickness on the surface of internal aluminium granules. The measurement was carried out by determining the bulk oxygen concentration in the samples, and calculating the oxide-layer thickness, by using model conditions about the microstructure of the aluminium samples. (author) 5 refs

Si/Ge intermixing during Ge Stranski–Krastanov growth

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Alain Portavoce

2014-12-01

Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

The dependence of the modulation transfer function on the blocking layer thickness in amorphous selenium x-ray detectors

International Nuclear Information System (INIS)

Hunter, David M.; Belev, Gueorgi; DeCrescenzo, Giovanni; Kasap, Safa O.; Mainprize, James G.; Rowlands, J. A.; Smith, Charles; Tuemer, Tuemay; Verpakhovski, Vladimir; Yin Shi; Yaffe, Martin J.

2007-01-01

Blocking layers are used to reduce leakage current in amorphous selenium detectors. The effect of the thickness of the blocking layer on the presampling modulation transfer function (MTF) and on dark current was experimentally determined in prototype single-line CCD-based amorphous selenium (a-Se) x-ray detectors. The sampling pitch of the detectors evaluated was 25 μm and the blocking layer thicknesses varied from 1 to 51 μm. The blocking layers resided on the signal collection electrodes which, in this configuration, were used to collect electrons. The combined thickness of the blocking layer and a-Se bulk in each detector was ∼200 μm. As expected, the dark current increased monotonically as the thickness of the blocking layer was decreased. It was found that if the blocking layer thickness was small compared to the sampling pitch, it caused a negligible reduction in MTF. However, the MTF was observed to decrease dramatically at spatial frequencies near the Nyquist frequency as the blocking layer thickness approached or exceeded the electrode sampling pitch. This observed reduction in MTF is shown to be consistent with predictions of an electrostatic model wherein the image charge from the a-Se is trapped at a characteristic depth within the blocking layer, generally near the interface between the blocking layer and the a-Se bulk

Thickness and composition of ultrathin SiO2 layers on Si

International Nuclear Information System (INIS)

Marel, C. van der; Verheijen, M.A.; Tamminga, Y.; Pijnenburg, R.H.W.; Tombros, N.; Cubaynes, F.

2004-01-01

Ultrathin SiO 2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it is not trivial to characterize this type of layer by means of XPS in a reliable way. We have investigated a series of ultrathin layers of SiO 2 on Si (in the range from 0.3 to 3 nm) using XPS. The samples were also analyzed by means of transmission electron microscopy (TEM), Rutherford backscattering (RBS), and ellipsometry. The thickness of the SiO 2 layers (d) was determined from the XPS results using three different approaches: the 'standard' equation (Seah and Spencer) for d, an overlayer-substrate model calculation, and the QUASES-Tougaard [Surf. Interface Anal. 26, 249 (1998), QUASES-Tougaard: Software package for Quantitative Analysis of Surfaces by Electron Spectroscopy, version 4.4 (2000); http://www.quases.com] method. Good agreement was obtained between the results of XPS analyses using the 'standard' equation, the overlayer-substrate model calculation, and RBS results. The QUASES-Tougaard results were approximately 62% above the other XPS results. The optical values for the thickness were always slightly higher than the thickness according to XPS or RBS. Using the model calculation, these (relatively small) deviations from the optical results could be explained as being a consequence of surface contaminations with hydrocarbons. For a thickness above 2.5 nm, the TEM results were in good agreement with the results obtained from the other techniques (apart from QUASES-Tougaard). Below 2.5 nm, significant deviations were found between RBS, XPS, and optical data on the one hand and TEM results on the other hand; the deviations became larger as the thickness of the SiO 2 decreased. This effect may be related to interface states of oxygen, which have been

Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

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Tsung-Shine Ko

2015-01-01

Full Text Available The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

Thin and thick layers of resin-based sealer cement bonded to root dentine compared: Adhesive behaviour.

Science.gov (United States)

Pane, Epita S; Palamara, Joseph E A; Messer, Harold H

2015-12-01

This study aims to evaluate tensile and shear bond strengths of one epoxy (AH) and two methacrylate resin-based sealers (EZ and RS) in thin and thick layers bonded to root dentine. An alignment device was prepared for accurate positioning of 20 root dentine cylinders in a predefined gap of 0.1 or 1 mm. Sealer was placed in the interface. Bond strength tests were conducted. Mode of failures and representative surfaces were evaluated. Data were analysed using anova and post-hoc tests, with P thick layer of sealer produced higher bond strength, except for the shear bond strength of EZ. Significant differences between thin and thick layers were found only in tensile bond strengths of AH and RS. Mixed type of failure was constantly found with all sealers. Bond strengths of thick layers of resin-based sealers to root dentine tended to be higher than with thin layers. © 2015 Australian Society of Endodontology.

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

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Stefano Cecchi

2017-02-01

Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

Impact of thickness on the structural properties of high tin content GeSn layers

Science.gov (United States)

Aubin, J.; Hartmann, J. M.; Gassenq, A.; Milord, L.; Pauc, N.; Reboud, V.; Calvo, V.

2017-09-01

We have grown various thicknesses of GeSn layers in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition cluster tool using digermane (Ge2H6) and tin tetrachloride (SnCl4). The growth pressure (100 Torr) and the F(Ge2H6)/F(SnCl4) mass-flow ratio were kept constant, and incorporation of tin in the range of 10-15% was achieved with a reduction in temperature: 325 °C for 10% to 301 °C for 15% of Sn. The layers were grown on 2.5 μm thick Ge Strain Relaxed Buffers, themselves on Si(0 0 1) substrates. We used X-ray Diffraction, Atomic Force Microscopy, Raman spectroscopy and Scanning Electron Microscopy to measure the Sn concentration, the strain state, the surface roughness and thickness as a function of growth duration. A dramatic degradation of the film was seen when the Sn concentration and layer thickness were too high resulting in rough/milky surfaces and significant Sn segregation.

Retina ganglion cell/inner plexiform layer and peripapillary nerve fiber layer thickness in patients with acromegaly.

Science.gov (United States)

Şahin, Muhammed; Şahin, Alparslan; Kılınç, Faruk; Yüksel, Harun; Özkurt, Zeynep Gürsel; Türkcü, Fatih Mehmet; Pekkolay, Zafer; Soylu, Hikmet; Çaça, İhsan

2017-06-01

Increased secretion of growth hormone and insulin-like growth factor-1 in acromegaly has various effects on multiple organs. However, the ocular effects of acromegaly have yet to be investigated in detail. The aim of the present study was to compare retina ganglion cell/inner plexiform layer (GCIPL) and peripapillary nerve fiber layer thickness (pRNFL) between patients with acromegaly and healthy control subjects using spectral domain optical coherence tomography (SD-OCT). This cross-sectional, comparative study included 18 patients with acromegaly and 20 control subjects. All participants underwent SD-OCT to measure pRNFL (in the seven peripapillary areas), GCIPL (in the nine ETDRS areas), and central macular thickness (CMT). Visual field (VF) examinations were performed using a Humphrey field analyzer in acromegalic patients. Measurements were compared between patients with acromegaly and control subjects. A total of 33 eyes of 18 patients with acromegaly and 40 eyes of 20 control subjects met the inclusion criteria of the present study. The overall calculated average pRNFL thickness was significantly lower in patients with acromegaly than in control subjects (P = 0.01), with pRNFL thickness significantly lower in the temporal superior and temporal inferior quadrants. Contrary to our expectations, pRNFL thickness in the nasal quadrant was similar between acromegalic and control subjects. The mean overall pRNFL thickness and superonasal, nasal, inferonasal, and inferotemporal quadrant pRNFL thicknesses were found to correlate with the mean deviation (MD) according to Spearman's correlation. However, other quadrants were not correlated with VF sensitivity. No significant difference in CMT values was observed (P = 0.6). GCIPL thickness was significantly lower in all quadrants of the inner and outer macula, except for central and inferior outer quadrants, in the acromegaly group than that in the control group (P acromegaly compared with that in control subjects

HYBRID LAYER THICKNESS IN PRIMARY AND PERMANENT TEETH – A COMPARISON BETWEEN TOTAL ETCH ADHESIVES

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Natalia Gateva

2012-05-01

Full Text Available Purpose: The aim this study is to compare the hybrid layer thickness and its micromorphological characteristics in samples from primary and permanent teeth following application of total etch adhesives.Materials and methods: On intact specimens of 20 primary and 10 permanent teeth was created flat dentin surfaces. The patterns were divided in 6 groups. Two different total etch adhesive systems were used – one tree steps (OptiBond, Kerr and one two steps (Exite, VivaDent. In groups 3, 4, 5 and 6 recommended etching time was used - 15 s, in groups 1 and 2 the etching time was reduced to 7 s. After applying the adhesive, resin composite build-ups were constructed. Thus restored samples are stored in saline solution for 24 hours at temperature 37 C. Then they are subjected to thermal stress in temperature between 5 C to 55 C for 1,500 cycles and to masticatory stress – 150,000 cycles with force 100 N in intervals of 0.4 s. After that the teeth are cut through the middle in medio-distal direction with a diamond disc. SEM observation was done to investigate the thickness of the hybrid layer and the presence of microgaps. Statistical analysis was performed with ANOVA and Tukey׳s tests.Results: SEM observation showed significant differences of the hybrid layer thickness between primary and permanent teeth under equal conditions and after different etching time. Group 6 presented the highest average thickness 8.85 μ and group 1 the lowest average in hybrid layer 3.74 μ.Conclusion: In primary teeth the hybrid layer thickness increases with the increased etching time. The hybrid layer thickness in primary teeth is greater than that of the hybrid layer in permanent teeth under equal conditions. For primary teeth it is more appropriate to reduce the etching time to 7s to obtain a hybrid layer with better quality

Clinical analysis of retinal nerve fiber layer thickness and macular fovea in hyperopia children with anisometropia amblyopia

Directory of Open Access Journals (Sweden)

Fei-Fei Li

2017-10-01

Full Text Available AIM:To analyze the clinical significance of axial length, diopter and retinal nerve fiber layer thickness in hyperopia children with anisometropia amblyopia. METHODS: From January 2015 to January 2017 in our hospital for treatment, 103 cases, all unilateral, were diagnosed as hyperopia anisometropia amblyopia. The eyes with amblyopia were as experimental group(103 eyes, another normal eye as control group(103 eyes. We took the detection with axial length, refraction, foveal thickness, corrected visual acuity, diopter and the average thickness of retinal nerve fiber layer. RESULTS: Differences in axial length and diopter and corrected visual acuity were statistically significant between the two groups(PP>0.05. There was statistical significance difference on the foveal thickness(PP>0.05. The positive correlation between diopter with nerve fiber layer thickness of foveal and around the optic disc were no statistically significant difference(P>0.05. CONCLUSION: Retinal thickness of the fovea in the eye with hyperopic anisometropia amblyopia were thicker than those in normal eyes; the nerve fiber layer of around the optic disc was not significantly different between the amblyopic eyes and contralateral eyes. The refraction and axial length had no significant correlation with optic nerve fiber layer and macular foveal thickness.

Changes in the relative thickness of individual subcutaneous adipose tissue layers in growing pigs

DEFF Research Database (Denmark)

McEvoy, Fintan; Strathe, Anders Bjerring; Madsen, Mads T.

2007-01-01

change in body weight in normal growing pigs. Methods: A group of nine pigs was examined using 14 MHz linear array transducer on three A group of nine pigs was examined using 14 MHz linear array transducer on three separate occasions. The average weight was 51, 94 and 124 kg for each successive scan...... longevity and finally to assist in the calculation of payments to producers that allow for general adiposity. Currently for reasons of tradition and ease, total adipose thickness measurements are made at one or multiple sites although it has been long recognized that up to three well defined layers (outer...... (L1), middle (L2), and inner (L3)) may be present to make up the total. Various features and properties of these layers have been described. This paper examines the contribution of each layer to total adipose thickness at three time points and describes the change in thickness of each layer per unit...

Effects of particles thickness and veneer reiforced layer in the properties of oriented strand boards OSB

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Setsuo Iwakiri

2009-03-01

Full Text Available This work evaluated the effects of particle thickness and veneer reinforced layer on the physical and mechanicalproperties of OSB made of Pinus taeda L. The boards were manufactured with particle thickness of 0.4, 0.7 and 1.0 mm and phenolformaldehyderesin in the proportion of 6% of solid content. To the veneer reinforced layer was used veneer from Pinus taeda with 2.0mm of thickness. The increase in the slenderness (length/thickness ratio of thins particles, results in the higher values of MOE andMOR in the cross direction. The increase in the particles thickness contributed to higher values of the board internal bond. Thedifferent particles thickness did not clearly affected on the physical properties of OSB. The veneer reinforced layer results in the higheraverage values of MOE and MOR in the cross direction. All of the results of MOE and MOR obtained for boards with differentthickness attend tominimum values required per CSA 0437 (CSA, 1993. For the internal bond, the results were satisfactory to boardsmanufactured with particles thickness of 0.7 and 1.0 mm. According to the results the main conclusions were: (i The increase in theparticles thickness contributed to lower values of MOE and MOR, and higher values of the board internal bond; (ii the veneerreinforced layer increased MOE and MOR values in the cross direction.

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

Science.gov (United States)

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

A method of detection to the grinding wheel layer thickness based on computer vision

Science.gov (United States)

Ji, Yuchen; Fu, Luhua; Yang, Dujuan; Wang, Lei; Liu, Changjie; Wang, Zhong

2018-01-01

This paper proposed a method of detection to the grinding wheel layer thickness based on computer vision. A camera is used to capture images of grinding wheel layer on the whole circle. Forward lighting and back lighting are used to enables a clear image to be acquired. Image processing is then executed on the images captured, which consists of image preprocessing, binarization and subpixel subdivision. The aim of binarization is to help the location of a chord and the corresponding ring width. After subpixel subdivision, the thickness of the grinding layer can be calculated finally. Compared with methods usually used to detect grinding wheel wear, method in this paper can directly and quickly get the information of thickness. Also, the eccentric error and the error of pixel equivalent are discussed in this paper.

Influence of crustal layering and thickness on co-seismic effects of Wenchuan earthquake

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Tan Hongbo

2011-02-01

Full Text Available Using the PSGRN/PSCMP software and the fault model offered by USGS and on the basis of finite rectangular dislocation theory and the local layered wave velocity structures of the crust-upper-mantle, the influences of crustal layering and thickness on co-seismic gravity changes and deformation of Wenchuan earthquake have been simulated. The results indicate that; the influences have a relationship with the attitude of faults and the relative position between calculated points and fault. The difference distribution form of simulated results between the two models is similar to that of co-seismic effect. For the per centum distribution, it’s restricted by the zero line of the co-seismic effects obviously. Its positive is far away from the zero line. For the crustal thickness, the effect is about 10% – 20%. The negative and the effect over 30% focus around the zero line. The average influences of crustal layering and thickness for the E-W displacement, N-S displacement, vertical displacement and gravity changes are 18.4%,18.0%, 15.8% and 16.2% respectively, When the crustal thickness is 40 km, they are 4.6%, 5.3%, 3.8% and 3.8%. Then the crustal thickness is 70 km, the average influences are 3.5%, 4.6%, 3.0% and 2.5% respectively.

Contact problems of a rectangular block on an elastic layer of finite thickness. Part I: The thin layer

NARCIS (Netherlands)

Alblas, J.B.; Kuipers, M.

1969-01-01

We consider a layer of finite thickness loaded in plane strain by a stamp with a straight horizontal base, which is smooth and rigid. The stamp is pressed vertically into the layer and is slightly rotated by an external moment load subsequently. Two cases are considered successively: the lower side

Sensing and controlling resin-layer thickness in additive manufacturing processes

NARCIS (Netherlands)

Kozhevnikov, A.

2017-01-01

This AM-TKI project in collaboration with TNO focusses on the sensing and control of resin-layer thickness in AM applications. Industrial Additive Manufacturing is considered to be a potential breakthrough production technology for many applications. A specific AM implementation is VAT photo

Lesion dehydration rate changes with the surface layer thickness during enamel remineralization

Science.gov (United States)

Chang, Nai-Yuan N.; Jew, Jamison M.; Fried, Daniel

2018-02-01

A transparent highly mineralized outer surface zone is formed on caries lesions during remineralization that reduces the permeability to water and plaque generated acids. However, it has not been established how thick the surface zone should be to inhibit the penetration of these fluids. Near-IR (NIR) reflectance coupled with dehydration can be used to measure changes in the fluid permeability of lesions in enamel and dentin. Based on our previous studies, we postulate that there is a strong correlation between the surface layer thickness and the rate of dehydration. In this study, the rates of dehydration for simulated lesions in enamel with varying remineralization durations were measured. Reflectance imaging at NIR wavelengths from 1400-2300 nm, which coincides with higher water absorption and manifests the greatest sensitivity to contrast changes during dehydration measurements, was used to image simulated enamel lesions. The results suggest that the relationship between surface zone thickness and lesion permeability is highly non-linear, and that a small increase in the surface layer thickness may lead to a significant decrease in permeability.

Non-destructive prediction of enteric coating layer thickness and drug dissolution rate by near-infrared spectroscopy and X-ray computed tomography.

Science.gov (United States)

Ariyasu, Aoi; Hattori, Yusuke; Otsuka, Makoto

2017-06-15

The coating layer thickness of enteric-coated tablets is a key factor that determines the drug dissolution rate from the tablet. Near-infrared spectroscopy (NIRS) enables non-destructive and quick measurement of the coating layer thickness, and thus allows the investigation of the relation between enteric coating layer thickness and drug dissolution rate. Two marketed products of aspirin enteric-coated tablets were used in this study, and the correlation between the predicted coating layer thickness and the obtained drug dissolution rate was investigated. Our results showed correlation for one product; the drug dissolution rate decreased with the increase in enteric coating layer thickness, whereas, there was no correlation for the other product. Additional examination of the distribution of coating layer thickness by X-ray computed tomography (CT) showed homogenous distribution of coating layer thickness for the former product, whereas the latter product exhibited heterogeneous distribution within the tablet, as well as inconsistent trend in the thickness distribution between the tablets. It was suggested that this heterogeneity and inconsistent trend in layer thickness distribution contributed to the absence of correlation between the layer thickness of the face and side regions of the tablets, which resulted in the loss of correlation between the coating layer thickness and drug dissolution rate. Therefore, the predictability of drug dissolution rate from enteric-coated tablets depended on the homogeneity of the coating layer thickness. In addition, the importance of micro analysis, X-ray CT in this study, was suggested even if the macro analysis, NIRS in this study, are finally applied for the measurement. Copyright © 2017 Elsevier B.V. All rights reserved.

Numerical algorithm for laser treatment of powder layer with variable thickness

Science.gov (United States)

Soboleva, Polina; Knyazeva, Anna

2017-12-01

Two-dimensional model of laser treatment of powder layer on the substrate is proposed in this paper. The model takes into account the shrinkage of powder layer due to the laser treatment. Three simplified variants of the model were studied. Firstly, the influence of optical properties of powder layer on the maximal temperature was researched. Secondly, two-dimensional model for given thickness of powder layer was studied where practically uniform temperature distribution across thin powder layer was demonstrated. Then, the numerical algorithm was developed to calculate the temperature field for the area of variable size. The impact of the optical properties of powder material on the character of the temperature distribution was researched numerically.

Versatile technique for assessing thickness of 2D layered materials by XPS

Science.gov (United States)

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.; Hu, Jianjun; Paul, Rajib; Kumar, Anurag; Pacley, Shanee; Glavin, Nicholas; Saenz, David; Smith, Kyle C.; Fisher, Timothy S.; Voevodin, Andrey A.

2018-03-01

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) and the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Therefore, after XPS analysis, exactly the same sample can undergo further processing or utilization.

Study of the Variation of Material layer Compotition and Thickness Related Neutron Flux and Gamma Radiation

Science.gov (United States)

Nirmalasari, Yuliana Dian; Suparmi; Sardjono, Y.

2017-11-01

Optimation of simulation design of collimator is corresponding to 30 MeV cyclotron generator. The simulation has used the variation of the thickness materials layers that was applied at treatment room’s door. The purpose of the variation and thickness of the material in this simulation to obtain optimum results for the shielding design in the irradiation chamber. The layers that we used are Pb-Fe and Pb-SS312. Simulation on cancer treatment is used with monte carlo simaulation MCNPX. The spesifications that we used for cyclotron is the spesification of the HM-30 Proton Cyclotron from Sumitomo Heavy Industries Ltd. The variation of the thickness materials layers that was applied at treatment room’s door are Pb remains 4cm while Fe and SS312 varies between 2 cm, 4 cm, 6 cm respectively. This simulation of Fe layer on Pb was give good result in measurement simulation at 4 cm thickness.

High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

Energy Technology Data Exchange (ETDEWEB)

Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

2014-03-03

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

Splitting diffraction peak in different thickness LL-interferometer and determination of thickness of damaged layer induced by electron irradiation of plates

International Nuclear Information System (INIS)

Truni, K.G.; Sedrakyan, A.G.; Papoyan, A.A.; Bezirganyan, P.A.

1988-01-01

Amplitude of twice reflected beam is calculated analytically, oscillatory dependence of peak intensity in the centre of diffraction image on the small variations in thickness is shown. The expression, clearly binding the splitting value of diffraction peak with variation in thickness of the interferometer plates, is received. The effect of variation in thickness on the splitting value of focal line is studied experimentally in case of irradiation of the equal-arm Π-shaped interferometer blocks by fast electron flow, thickness of the originated damaged layers are determined

Analysis on Interfacial Performance of CFRPConcrete with Different Thickness of Adhesive Layer and CFRP Plate

Directory of Open Access Journals (Sweden)

Guo Qingyong

2018-01-01

Full Text Available The bond behavior of CFRP-concrete interface is the analysis foundation for concrete structures with external strengthening CFRP. In the paper, the influences of the thickness of CFRP plate and adhesive layer on interfacial adhesive properties are investigated through the finite element program. The influence rules of the thickness on the interfacial ultimate bearing capacity and the effective bond length are performed. The results show that the thickness of adhesive layer and CFRP plate has a significant effect on the interfacial performance of CFRP-concrete.

Inversion of potential-field data for layers with uneven thickness

OpenAIRE

Caratori Tontini, F.; Cocchi, L.; Carmisciano, C.; Stefanelli, P.

2008-01-01

AB: Inversion of large-scale potential-field anomalies, aimed at determining density or magnetization, is usually made in the Fourier domain. The commonly adopted geometry is based on a layer of constant thickness, characterized by a bottom surface at a fixed distance from the top surface.....

The influence of thickness and viscosity of liquid annular layer on dynamic behavior of cylindrical shell

International Nuclear Information System (INIS)

Kuzelka, V.; Neuman, F.; Pecinka, L.

1983-01-01

This paper presents the results of experiments concerning the influence of thickness and viscosity of inner and outer annular layers of a liquid on the dynamic behaviour of a cylindrical shell, and a mathematical model of the problem based on acoustic approach is formulated to compare experimental and theoretical results. The measurements of natural frequencies and of damping ratios of a cylindrical shell were carried out with water and with two kinds of mineral oils of different viscosities. The results point towards the fact that with a decreasing thickness of the liquid layer the influence of the added liquid mass increases and the frequency drop is higher. On the other hand there is a certain relative magnitude of the surrounding medium at which the system behaves as an unlimited one. This magnitude depends on the mode order. The statement that the lesser is the thickness of the annular liquid layer the more important is its influence and the larger is the added liquid mass holds up to a certain thickness of the gap, comparable with the thickness of the thin liquid layer on the surface of the shell in which there has not yet been formed a transverse wave. The flowing in this layer is not potential. The governing equation for the description of this problem then is not Euler equation but Stokes's and Helmholtz's theorems for whirling motion. The thickness of the surface layer depends on the viscosity of the liquid. The frequencies measured for the least gap for water were well identified, while for both the mineral oils were chaotical, without any conspicuous resonances. (orig./GL)

Effect of GaAs interlayer thickness variations on the optical properties of multiple InAs QD structure

International Nuclear Information System (INIS)

Park, C.Y.; Park, K.W.; Kim, J.M.; Lee, Y.T.

2009-01-01

Multiple InAs/GaAs self-assembled quantum dots (QDs) with vertically stacked structure are grown by molecular beam epitaxy and the effects of GaAs interlayer thickness variation on optical properties are studied. The growth conditions are optimized by in-situ RHEED, AFM, and PL measurement. The five InAs QD layers are embedded in GaAs and Al0.3Ga0.7As layer. The PL intensity is increased with increasing GaAs interlayer thickness. The thin GaAs interlayer has strain field, the strain-induced intermixing of indium atoms in the InAs QDs (blue-shift) can overcompensate for the effect on the increased QD size (red-shift) (H. Heidemeyer et al. Appl. Phys. Lett. 80, 1544 (2002); T. Nakaoka et al. J. Appl. Phys. Lett. 96, 150 (2004)[1, 2], respectively). For the interlayer thickness larger than about 7 nm, the blue-shifts are correlated to the dominant high-energy excited state transitions due to the successive state filling of the ground and higher excited states in the QDs. The energy separation of double PL peaks, originated from two different excited states, was kept at around 50 meV at room temperature. A possible mechanism concerning this phenomenon is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Multi-layer thickness determination using differential-based enhanced Fourier transforms of X-ray reflectivity data

Energy Technology Data Exchange (ETDEWEB)

Poust, Benjamin [Department of Materials Science and Engineering, University of California, Los Angeles, CA (United States); Northrop Grumman Space Technology, Redondo Beach, CA (United States); Sandhu, Rajinder [Northrop Grumman Space Technology, Redondo Beach, CA (United States); Goorsky, Mark [Department of Materials Science and Engineering, University of California, Los Angeles, CA (United States)

2009-08-15

Layer thickness determination of single and multi-layer structures is achieved using a new method for generating Fourier transforms (FTs) of X-ray reflectivity data. This enhanced Fourier analysis is compared to other techniques in the determination of AlN layer thickness deposited on sapphire. In addition to demonstrably improved results, the results also agree with thicknesses determined using simulations and TEM measurements. The effectiveness of the technique is further demonstrated using the more complicated metamorphic epitaxial multi-layer AlSb/InAs structures deposited on GaAs. The approach reported here is based upon differentiating the specular intensity with respect to the vertical reciprocal space coordinate Q{sub Z}. In general, differentiation is far more effective at removing the sloping background present in reflectivity scans than logarithmic compression alone, average subtraction alone, or other methods. When combined with any of the other enhancement techniques, however, differentiation yields distinguishable discrete Fourier transform (DFT) power spectrum peaks for even the weakest and most truncated of sloping oscillations that are present in many reflectivity scans from multi-layer structures. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

[Multiplayer white organic light-emitting diodes with different order and thickness of emission layers].

Science.gov (United States)

Xu, Wei; Lu, Fu-Han; Cao, Jin; Zhu, Wen-Qing; Jiang, Xue-Yin; Zhang, Zhi-Lin; Xu, Shao-Hong

2008-02-01

In multilayer OLED devices, the order and thickness of the emission layers have great effect on their spectrum. Based on the three basic colours of red, blue and green, a series of white organic light-emitting diodes(WOLEDS)with the structure of ITO/CuPc(12 nm)/NPB(50 nm)/EML/LiF(1 nm)/Al(100 nm) and a variety of emission layer's orders and thicknesses were fabricated. The blue emission material: 2-t-butyl-9,10-di-(2-naphthyl)anthracene (TBADN) doped with p-bis(p-N, N-diphenyl-amono-styryl)benzene(DSA-Ph), the green emission material: tris-[8-hydroxyquinoline]aluminum(Alq3) doped with C545, and the red emission material: tris-[8-hydroxyquinoline]aluminum( Alq3) doped with 4-(dicyanomethylene)-2-t-butyl-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) were used. By adjusting the order and thickness of each emission layer in the RBG structure, we got a white OLED with current efficiency of 5.60 cd x A(-1) and Commission Internationale De L'Eclairage (CIE) coordinates of (0. 34, 0.34) at 200 mA x cm(-2). Its maximum luminance reached 20 700 cd x m(-2) at current density of 400 mA x cm(-2). The results were analyzed on the basis of the theory of excitons' generation and diffusion. According to the theory, an equation was set up which relates EL spectra to the luminance efficiency, the thickness of each layer and the exciton diffusion length. In addition, in RBG structure with different thickness of red layer, the ratio of th e spectral intensity of red to that of blue was calculated. It was found that the experimental results are in agreement with the theoretical values.

The thickness of the HI gas layer in spiral galaxies

NARCIS (Netherlands)

Sicking, Floris Jan

1997-01-01

In the present study, in two inclined spiral galaxies, NGC 3198 and NGC 2403, the HI random velocity dispersion and layer thickness will be measured simultaneously. This will be done from the HI velocity dispersion field (the distribution on the sky of the observed HI line of sight velocity

Nanometer-resolution electron microscopy through micrometers-thick water layers

Energy Technology Data Exchange (ETDEWEB)

Jonge, Niels de, E-mail: niels.de.jonge@vanderbilt.edu [Vanderbilt University Medical Center, Department of Molecular Physiology and Biophysics, Nashville, TN 37232-0615 (United States); Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831-6064 (United States); Poirier-Demers, Nicolas; Demers, Hendrix [Universite de Sherbrooke, Electrical and Computer Engineering, Sherbrooke, Quebec J1K 2R1 (Canada); Peckys, Diana B. [Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831-6064 (United States); University of Tennessee, Center for Environmental Biotechnology, Knoxville, TN 37996-1605 (United States); Drouin, Dominique [Universite de Sherbrooke, Electrical and Computer Engineering, Sherbrooke, Quebec J1K 2R1 (Canada)

2010-08-15

Scanning transmission electron microscopy (STEM) was used to image gold nanoparticles on top of and below saline water layers of several micrometers thickness. The smallest gold nanoparticles studied had diameters of 1.4 nm and were visible for a liquid thickness of up to 3.3 {mu}m. The imaging of gold nanoparticles below several micrometers of liquid was limited by broadening of the electron probe caused by scattering of the electron beam in the liquid. The experimental data corresponded to analytical models of the resolution and of the electron probe broadening as function of the liquid thickness. The results were also compared with Monte Carlo simulations of the STEM imaging on modeled specimens of similar geometry and composition as used for the experiments. Applications of STEM imaging in liquid can be found in cell biology, e.g., to study tagged proteins in whole eukaryotic cells in liquid and in materials science to study the interaction of solid:liquid interfaces at the nanoscale.

Nonmonotonic behaviour of superconducting critical temperature of Nb/CuNi bilayers with a nanometer range of layer thickness

International Nuclear Information System (INIS)

Morari, R.; Antropov, E.; Socrovisciuc, A.; Prepelitsa, A.; Zdravkov, V.I.; Tagirov, L.R.; Kupriyanov, M.Yu.; Sidorenko, A.S.

2009-01-01

Present work reports the result of the proximity effect investigation for superconducting Nb/CuNi-bilayers with the thickness of the ferromagnetic layer (Cu x Ni 1-x ) being in the sub-nanometer range. It was found a non-monotonic behavior of the critical temperature T c , i.e. its growth with the increasing of the ferromagnetic layer thickness dF, for the series of the samples with constant thickness of Nb layer, (d Nb = const). (authors)

Performance of High Layer Thickness in Selective Laser Melting of Ti6Al4V

Directory of Open Access Journals (Sweden)

Xuezhi Shi

2016-12-01

Full Text Available To increase building rate and save cost, the selective laser melting (SLM of Ti6Al4V with a high layer thickness (200 μm and low cost coarse powders (53 μm–106 μm at a laser power of 400 W is investigated in this preliminary study. A relatively large laser beam with a diameter of 200 μm is utilized to produce a stable melt pool at high layer thickness, and the appropriate scanning track, which has a smooth surface with a shallow contact angle, can be obtained at the scanning speeds from 40 mm/s to 80 mm/s. By adjusting the hatch spacings, the density of multi-layer samples can be up to 99.99%, which is much higher than that achieved in previous studies about high layer thickness selective laser melting. Meanwhile, the building rate can be up to 7.2 mm3/s, which is about 2 times–9 times that of the commercial equipment. Besides, two kinds of defects are observed: the large un-melted defects and the small spherical micropores. The formation of the un-melted defects is mainly attributed to the inappropriate overlap rates and the unstable scanning tracks, which can be eliminated by adjusting the processing parameters. Nevertheless, the micropores cannot be completely eliminated. It is worth noting that the high layer thickness plays a key role on surface roughness rather than tensile properties during the SLM process. Although a sample with a relatively coarse surface is generated, the average values of yield strength, ultimate tensile strength, and elongation are 1050 MPa, 1140 MPa, and 7.03%, respectively, which are not obviously different than those with the thin layer thickness used in previous research; this is due to the similar metallurgical bonding and microstructure.

Performance of High Layer Thickness in Selective Laser Melting of Ti6Al4V.

Science.gov (United States)

Shi, Xuezhi; Ma, Shuyuan; Liu, Changmeng; Chen, Cheng; Wu, Qianru; Chen, Xianping; Lu, Jiping

2016-12-01

To increase building rate and save cost, the selective laser melting (SLM) of Ti6Al4V with a high layer thickness (200 μm) and low cost coarse powders (53 μm-106 μm) at a laser power of 400 W is investigated in this preliminary study. A relatively large laser beam with a diameter of 200 μm is utilized to produce a stable melt pool at high layer thickness, and the appropriate scanning track, which has a smooth surface with a shallow contact angle, can be obtained at the scanning speeds from 40 mm/s to 80 mm/s. By adjusting the hatch spacings, the density of multi-layer samples can be up to 99.99%, which is much higher than that achieved in previous studies about high layer thickness selective laser melting. Meanwhile, the building rate can be up to 7.2 mm³/s, which is about 2 times-9 times that of the commercial equipment. Besides, two kinds of defects are observed: the large un-melted defects and the small spherical micropores. The formation of the un-melted defects is mainly attributed to the inappropriate overlap rates and the unstable scanning tracks, which can be eliminated by adjusting the processing parameters. Nevertheless, the micropores cannot be completely eliminated. It is worth noting that the high layer thickness plays a key role on surface roughness rather than tensile properties during the SLM process. Although a sample with a relatively coarse surface is generated, the average values of yield strength, ultimate tensile strength, and elongation are 1050 MPa, 1140 MPa, and 7.03%, respectively, which are not obviously different than those with the thin layer thickness used in previous research; this is due to the similar metallurgical bonding and microstructure.

Thiophene Rings Improve the Device Performance of Conjugated Polymers in Polymer Solar Cells with Thick Active Layers

NARCIS (Netherlands)

Duan, C.; Gao, K.; Colberts, F. J. M.; Liu, F.; Meskers, S. C. J.; Wienk, M. M.; Janssen, R. A. J.

2017-01-01

Developing novel materials that tolerate thickness variations of the active layer is critical to further enhance the efficiency of polymer solar cells and enable large-scale manufacturing. Presently, only a few polymers afford high efficiencies at active layer thickness exceeding 200 nm and

Fabrication of large area woodpile structure in polymer

Science.gov (United States)

Gupta, Jaya Prakash; Dutta, Neilanjan; Yao, Peng; Sharkawy, Ahmed S.; Prather, Dennis W.

2009-02-01

A fabrication process of three-dimensional Woodpile photonic crystals based on multilayer photolithography from commercially available photo resist SU8 have been demonstrated. A 6-layer, 2 mm × 2mm woodpile has been fabricated. Different factors that influence the spin thickness on multiple resist application have been studied. The fabrication method used removes, the problem of intermixing, and is more repeatable and robust than the multilayer fabrication techniques for three dimensional photonic crystal structures that have been previously reported. Each layer is developed before next layer photo resist spin, instead of developing the whole structure in the final step as used in multilayer process. The desired thickness for each layer is achieved by the calibration of spin speed and use of different photo resist compositions. Deep UV exposure confinement has been the defining parameter in this process. Layer uniformity for every layer is independent of the previous developed layers and depends on the photo resist planarizing capability, spin parameters and baking conditions. The intermixing problem, which results from the previous layers left uncrossed linked photo resist, is completely removed in this process as the previous layers are fully developed, avoiding any intermixing between the newly spun and previous layers. Also this process gives the freedom to redo every spin any number of times without affecting the previously made structure, which is not possible in other multilayer process where intermediate developing is not performed.

Growth mode, magnetic and magneto-optical properties of pulsed-laser-deposited Au/Co/Au(1 1 1) trilayers

International Nuclear Information System (INIS)

Clavero, C.; Cebollada, A.; Armelles, G.; Fruchart, O.

2010-01-01

The growth mode, magnetic and magneto-optical properties of epitaxial Au/Co/Au(1 1 1) ultrathin trilayers grown by pulsed-laser deposition (PLD) under ultra-high vacuum are presented. Sapphire wafers buffered with a single-crystalline Mo(1 1 0) buffer layer were used as substrates. Owing to PLD-induced interfacial intermixing at the lower Co/Au(1 1 1) interface, a close-to layer-by-layer growth mode is promoted. Surprisingly, despite this intermixing, ferromagnetic behavior is found at room temperature for coverings starting at 1 atomic layer (AL). The films display perpendicular magnetization with anisotropy constants reduced by 50% compared to TD-grown or electrodeposited films, and with a coercivity more than one order of magnitude lower (≤5mT). The magneto-optical (MO) response in the low Co thickness range is dominated by Au/Co interface contributions. For thicknesses starting at 3 AL Co, the MO response has a linear dependence with the Co thickness, indicative of a continuous-film-like MO behavior.

Fractal-like thickness and topography of the salt layer in a pillows province of the southern North Sea

Science.gov (United States)

Hernandez Maya, K.; Mitchell, N. C.; Huuse, M.

2017-12-01

Salt topography and thickness variations are important for testing theories of how halokinetic deformation proceeds. The ability to predict thickness variations of salt at small scale is also important for reservoir evaluations, as breach of the salt layer can lead to loss of petroleum fluids and can be difficult to evaluate from seismic reflection data. Relevant to these issues, we here report analysis of data on salt layer topography and thickness from the southern North Sea, where the salt is organized into pillows. These data were derived by the Geological Survey of the Netherlands (TNO) from industry 3D seismic reflection data combined with a dense network of well information. Highs and lows in the topography of the upper salt interface occur spaced over a variety of lengthscales. Power spectral analysis of the interface topography reveals a simple inverse power law relationship between power spectral density and spatial wave number. The relationship suggests that the interface is a self-affine fractal with a fractal dimension of 2.85. A similar analysis of the salt layer thickness also suggests a fractal-like power law. Whereas the layer thickness power law is unsurprising as the underlying basement topography dominates the thickness and it also has a fractal-like power spectrum, the salt topography is not so easily explained as not all the basement faults are overlaid by salt pillows, instead some areas of the dataset salt thinning overlies faults. We consider instead whether a spatially varied loading of the salt layer may have caused this fractal-like geometry. Varied density and thickness of overburdening layers seem unlikely causes, as thicknesses of layers and their reflectivities do not vary sympathetically with the topography of the interface. The composition of the salt layer varies with the relative proportions of halite and denser anhydrite and other minerals. Although limited in scope and representing the mobilized salt layer, the information from

Confined methane-water interfacial layers and thickness measurements using in situ Raman spectroscopy.

Science.gov (United States)

Pinho, Bruno; Liu, Yukun; Rizkin, Benjamin; Hartman, Ryan L

2017-11-07

Gas-liquid interfaces broadly impact our planet, yet confined interfaces behave differently than unconfined ones. We report the role of tangential fluid motion in confined methane-water interfaces. The interfaces are created using microfluidics and investigated by in situ 1D, 2D and 3D Raman spectroscopy. The apparent CH 4 and H 2 O concentrations are reported for Reynolds numbers (Re), ranging from 0.17 to 8.55. Remarkably, the interfaces are comprised of distinct layers of thicknesses varying from 23 to 57 μm. We found that rarefaction, mixture, thin film, and shockwave layers together form the interfaces. The results indicate that the mixture layer thickness (δ) increases with Re (δ ∝ Re), and traditional transport theory for unconfined interfaces does not explain the confined interfaces. A comparison of our results with thin film theory of air-water interfaces (from mass transfer experiments in capillary microfluidics) supports that the hydrophobicity of CH 4 could decrease the strength of water-water interactions, resulting in larger interfacial thicknesses. Our findings help explain molecular transport in confined gas-liquid interfaces, which are common in a broad range of societal applications.

CANDU fuel sheath integrity and oxide layer thickness determination by Eddy current technique

International Nuclear Information System (INIS)

Gheorghe, Gabriela; Man, Ion; Parvan, Marcel; Valeca, Serban

2010-01-01

This paper presents results concerning the integrity assessment of the fuel elements cladding and measurements of the oxide layer on sheaths, using the eddy current technique. Flaw detection using eddy current provides information about the integrity of fuel element sheath or presence of defects in the sheath produced by irradiation. The control equipment consists of a flaw detector with eddy currents, operable in the frequency range 10 Hz to 10 MHz, and a differential probe. The calibration of the flaw detector is done using artificial defects (longitudinal, transversal, external and internal notches, bored and unbored holes) obtained on Zircaloy-4 tubes identical to those out of which the sheath of the CANDU fuel element is manufactured (having a diameter of 13.08 mm and a wall thickness of 0.4 mm). When analyzing the behavior of the fuel elements' cladding facing the corrosion is important to know the thickness of the zirconium oxide layer. The calibration of the device measuring the thickness of the oxide layer is done using a Zircaloy-4 tube identical to that which the cladding of the CANDU fuel element is manufactured of, and calibration foils, as well. (authors)

Investigation of the electrochemical deposition of thick layers of cadmium telluride

International Nuclear Information System (INIS)

Rousset, J.

2007-04-01

This research thesis deals with the problem of electrochemical deposition of thick layers of cadmium telluride (CdTe) meeting the requirements of high energy radiation detection. The author first recalls the physicochemical properties of CdTe and the basic principles of radiology. He details the different criteria which define a material for X ray detection. He describes the experimental conditions, the nature and preparation of substrates, and the different electrochemical systems used in this research. He studies the impact of the applied potential on the material properties, and compares previously obtained results available in the literature with those obtained in the chosen pool conditions. He discusses the synthesis of CdTe thick layers for which different methods are tested: static in potential, static in intensity, pulsed. The coatings obtained with a given potential and then with a given current are investigated. Finally, the influence of a thermal treatment in presence or absence of a sintering agent on the morphology, the chemical composition, and the crystalline and electric properties of the deposited material is discussed, and the results of the behaviour under X rays of a electrodeposited layer are presented

New Normative Database of Inner Macular Layer Thickness Measured by Spectralis OCT Used as Reference Standard for Glaucoma Detection.

Science.gov (United States)

Nieves-Moreno, María; Martínez-de-la-Casa, José M; Bambo, María P; Morales-Fernández, Laura; Van Keer, Karel; Vandewalle, Evelien; Stalmans, Ingeborg; García-Feijoó, Julián

2018-02-01

This study examines the capacity to detect glaucoma of inner macular layer thickness measured by spectral-domain optical coherence tomography (SD-OCT) using a new normative database as the reference standard. Participants ( N = 148) were recruited from Leuven (Belgium) and Zaragoza (Spain): 74 patients with early/moderate glaucoma and 74 age-matched healthy controls. One eye was randomly selected for a macular scan using the Spectralis SD-OCT. The variables measured with the instrument's segmentation software were: macular nerve fiber layer (mRNFL), ganglion cell layer (GCL), and inner plexiform layer (IPL) volume and thickness along with circumpapillary RNFL thickness (cpRNFL). The new normative database of macular variables was used to define the cutoff of normality as the fifth percentile by age group. Sensitivity, specificity, and area under the receiver operating characteristic curve (AUROC) of each macular measurement and of cpRNFL were used to distinguish between patients and controls. Overall sensitivity and specificity to detect early-moderate glaucoma were 42.2% and 88.9% for mRNFL, 42.4% and 95.6% for GCL, 42.2% and 94.5% for IPL, and 53% and 94.6% for RNFL, respectively. The best macular variable to discriminate between the two groups of subjects was outer temporal GCL thickness as indicated by an AUROC of 0.903. This variable performed similarly to mean cpRNFL thickness (AUROC = 0.845; P = 0.29). Using our normative database as reference, the diagnostic power of inner macular layer thickness proved comparable to that of peripapillary RNFL thickness. Spectralis SD-OCT, cpRNFL thickness, and individual macular inner layer thicknesses show comparable diagnostic capacity for glaucoma and RNFL, GCL, and IPL thickness may be useful as an alternative diagnostic test when the measure of cpRNFL shows artifacts.

Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

KAUST Repository

Alhashim, Hala H.

2015-08-15

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.

Vanishing stick-slip friction in few-layer graphenes: the thickness effect.

Science.gov (United States)

Xu, Liang; Ma, Tian-Bao; Hu, Yuan-Zhong; Wang, Hui

2011-07-15

We report the thickness dependence of intrinsic friction in few-layer graphenes, adopting molecular dynamics simulations. The friction force drops dramatically with decreasing number of layers and finally approaches zero with two or three layers. The results, which are robust over a wide range of temperature, shear velocity, and pressure are quantitatively explained by a theoretical model with regard to lateral stiffness, slip length, and maximum lateral force, which could provide a new conceptual framework for understanding stick-slip friction. The results reveal the crucial role of the dimensional effect in nanoscale friction, and could be helpful in the design of graphene-based nanodevices.

Ag-related alloy formation and magnetic phases for Ag/Co/Ir(111) ultrathin films

International Nuclear Information System (INIS)

Tsay, Jyh-Shen; Tsai, Du-Cheng; Chang, Cheng-Hsun-Tony; Chen, Wei-Hsiang

2013-01-01

The Kerr intensity versus the Ag thickness for Ag grown on the top of Co/Ir(111) exhibits an oscillating behavior with a period around one monolayer which should be due to the morphological change related electronic structure differences of the Ag layer. From systematical investigations of Ag/Co/Ir(111) films with the Co layer thinner than 4 monolayers at temperatures below 900 K, a magnetic phase diagram has been established. As the annealing temperature increases for Ag/Co/Ir(111) films, enhancements of the coercive force occur in both the polar and longitudinal configurations due to the intermixing of Ag and Co at the interface and the formation of Co–Ir alloy. The disappearance of ferromagnetism is mainly attributed to the reduced atomic percent of cobalt in Co–Ir alloy, the lowered Curie temperature by a reduction of the thickness of magnetic layers, and the intermixing of Ag and Co at the Ag/Co interface. - Highlights: • An oscillating behavior occurs due to the morphological change for Ag on Co/Ir(111). • A magnetic phase diagram has been established for Ag/Co/Ir(111). • Some Ag atoms intermix with the underlying Co layer at high temperatures. • Polar coercive force is enhanced due to the compositional change

Influence of the magnetic dead layer thickness of Mg-Zn ferrites nanoparticle on their magnetic properties

Energy Technology Data Exchange (ETDEWEB)

El-Sayed, H.M. [Physics Department, Faculty of Science, Ain Shams University, Cairo (Egypt); Ali, I.A.; Azzam, A. [Nuclear Physics Department, Nuclear Research Center, Atomic Energy Authority (Egypt); Sattar, A.A. [Physics Department, Faculty of Science, Ain Shams University, Cairo (Egypt)

2017-02-15

Nanoparticle ferrite with chemical formula Mg{sub (1−x)}Zn{sub x}Fe{sub 2}O{sub 4} (where x=0.0, 0.2, 0.4, 0.6, 0.8 and 1) were prepared by sol-gel technique. Single phase structure of these ferrites was confirmed using X-ray diffraction (XRD). Transmission Electron Microscope (TEM) showed that the particle size of the samples in the range of (5.7–10.6 nm). The hysteresis studies showed superparamagnetic behaviour at room temperature. The magnetization behaviour with Zn-content is expressed in the light of Yafet-Kittel angles. The dead layer thickness (t) was calculated and its effect on the magnetization and magnetic losses was debated. The Specific Absorption Rate (SAR) in an alternating magnetic field with frequency 198 kHz for these ferrites has been studied. It is found that, the thickness of magnetic dead layer of the surface of the materials has greatly affected the SAR value of the samples. - Highlights: • Synthesis of Mg-Zn nanoparticle ferrite by sol-gel technique. • Methods of dead layer thickness calculation. • Magnetic behaviour explanation. • Relation between the Specific Absorption Rate, dead layer thickness and particle size.

Influence of layer thickness on the structure and the magnetic properties of Co/Pd epitaxial multilayer films

Energy Technology Data Exchange (ETDEWEB)

Tobari, Kousuke, E-mail: tobari@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan); Ohtake, Mitsuru; Nagano, Katsumasa; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan)

2012-03-15

Co/Pd epitaxial multilayer films were prepared on Pd(111){sub fcc} underlayers hetero-epitaxially grown on MgO(111){sub B1} single-crystal substrates at room temperature by ultra-high vacuum RF magnetron sputtering. In-situ reflection high energy electron diffraction shows that the in-plane lattice spacing of Co on Pd layer gradually decreases with increasing the Co layer thickness, whereas that of Pd on Co layer remains unchanged during the Pd layer formation. The CoPd alloy phase formation is observed around the Co/Pd interface. The atomic mixing is enhanced for thinner Co and Pd layers in multilayer structure. With decreasing the Co and the Pd layer thicknesses and increasing the repetition number of Co/Pd multilayer film, stronger perpendicular magnetic anisotropy is observed. The relationships between the film structure and the magnetic properties are discussed. - Highlights: Black-Right-Pointing-Pointer Epitaxial Co/Pd multilayer films are prepared on Pd(111){sub fcc} underlayers. Black-Right-Pointing-Pointer Lattice strain in Co layer and CoPd-alloy formation are noted around the interface. Black-Right-Pointing-Pointer Magnetic property dependence on layer thickness is reported.

Determination of the thickness of chemically removed thin layers on GaAs VPE structures

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K.; Nemeth-Sallay, M.; Nemcsics, A. (Research Inst. for Technical Physics, Hungarian Academy of Sciences, Budapest (Hungary))

1991-01-01

Thinning of epitaxial GaAs layers was studied during the surface etching, with a special attention to submicron epitaxial structures, like MESFET or varactor-type structures. Each chemical treatment influences the crystal surface during the device preparation processes, though the possible thinning of the active layer is small. Therefore a method allowing determination of thicknesses as small as at about 20 nm of the layer removed by chemical etching from GaAs VPE structures was applied. Using special multilayered structures and a continuous electrochemical carrier concentration depth profiling, the influence of the layer thickness inhomogeneity and of some measurement errors can be minimized. Some frequently used etchants and the influence of different - so called - non-etching processes were compared in different combinations. It was shown that besides the direct etching a change of the surface conditions occurs, which influences the etch rate in the succeeding etching procedure. (orig.).

Evaluation of endothelial mucin layer thickness after phacoemulsification with next generation ophthalmic irrigating solution.

Science.gov (United States)

Ghate, Deepta A; Holley, Glenn; Dollinger, Harli; Bullock, Joseph P; Markwardt, Kerry; Edelhauser, Henry F

2008-10-01

To evaluate human corneal endothelial mucin layer thickness and ultrastructure after phacoemulsification and irrigation-aspiration with either next generation ophthalmic irrigating solution (NGOIS) or BSS PLUS. Paired human corneas were mounted in an artificial anterior chamber, exposed to 3 minutes of continuous ultrasound (US) at 80% power using the Alcon SERIES 20000 LEGACY surgical system (n = 9) or to 2 minutes of pulsed US at 50% power, 50% of the time at 20 pps using the Alcon INFINITI Vision System (n = 5), and irrigated with 250 mL of either NGOIS or BSS PLUS. A control group of paired corneas did not undergo phacoemulsification or irrigation-aspiration (n = 5). Corneas were divided and fixed for mucin staining or transmission electron microscopy. Mucin layer thickness was measured on the transmission electron microscopy prints. The mucin layer thickness in the continuous phaco group was 0.77 +/- 0.02 microm (mean +/- SE) with NGOIS and 0.51 +/- 0.01 microm with BSS PLUS (t test, P INFINITI Vision System (pulsed US) and the LEGACY surgical system (continuous US).

Suppression of the two-dimensional electron gas in LaGaO3/SrTiO3 by cation intermixing

KAUST Repository

Nazir, S.; Amin, B.; Schwingenschlö gl, Udo

2013-01-01

Cation intermixing at the n-type polar LaGaO 3 /SrTiO 3 (001) interface is investigated by first principles calculations. Ti"Ga, Sr"La, and SrTi"LaGa intermixing are studied in comparison to each other, with a focus on the interface stability. We

Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

Energy Technology Data Exchange (ETDEWEB)

Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

2010-05-31

The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

Single versus double-layer uterine closure at cesarean: impact on lower uterine segment thickness at next pregnancy.

Science.gov (United States)

Vachon-Marceau, Chantale; Demers, Suzanne; Bujold, Emmanuel; Roberge, Stephanie; Gauthier, Robert J; Pasquier, Jean-Charles; Girard, Mario; Chaillet, Nils; Boulvain, Michel; Jastrow, Nicole

2017-07-01

Uterine rupture is a potential life-threatening complication during a trial of labor after cesarean delivery. Single-layer closure of the uterus at cesarean delivery has been associated with an increased risk of uterine rupture compared with double-layer closure. Lower uterine segment thickness measurement by ultrasound has been used to evaluate the quality of the uterine scar after cesarean delivery and is associated with the risk of uterine rupture. To estimate the impact of previous uterine closure on lower uterine segment thickness. Women with a previous single low-transverse cesarean delivery were recruited at 34-38 weeks' gestation. Transabdominal and transvaginal ultrasound evaluation of the lower uterine segment thickness was performed by a sonographer blinded to clinical data. Previous operative reports were reviewed to obtain the type of previous uterine closure. Third-trimester lower uterine segment thickness at the next pregnancy was compared according to the number of layers sutured and according to the type of thread for uterine closure, using weighted mean differences and multivariate logistic regression analyses. Of 1613 women recruited, with operative reports available, 495 (31%) had a single-layer and 1118 (69%) had a double-layer closure. The mean third-trimester lower uterine segment thickness was 3.3 ± 1.3 mm and the proportion with lower uterine segment thickness cesarean delivery is associated with a thicker third-trimester lower uterine segment and a reduced risk of lower uterine segment thickness <2.0 mm in the next pregnancy. The type of thread for uterine closure has no significant impact on lower uterine segment thickness. Copyright © 2017 Elsevier Inc. All rights reserved.

Modification of the laser triangulation method for measuring the thickness of optical layers

Science.gov (United States)

Khramov, V. N.; Adamov, A. A.

2018-04-01

The problem of determining the thickness of thin films by the method of laser triangulation is considered. An expression is derived for the film thickness and the distance between the focused beams on the photo detector. The possibility of applying the chosen method for measuring thickness is in the range [0.1; 1] mm. We could resolve 2 individual light marks for a minimum film thickness of 0.23 mm. We resolved with the help of computer processing of photos with a resolution of 0.10 mm. The obtained results can be used in ophthalmology for express diagnostics during surgical operations on the corneal layer.

Ratiometric analysis of optical coherence tomography-measured in vivo retinal layer thicknesses for the detection of early diabetic retinopathy.

Science.gov (United States)

Bhaduri, Basanta; Shelton, Ryan L; Nolan, Ryan M; Hendren, Lucas; Almasov, Alexandra; Labriola, Leanne T; Boppart, Stephen A

2017-11-01

Influence of diabetes mellitus (DM) and diabetic retinopathy (DR) on parafoveal retinal thicknesses and their ratios was evaluated. Six retinal layer boundaries were segmented from spectral-domain optical coherence tomography images using open-source software. Five study groups: (1) healthy control (HC) subjects, and subjects with (2) controlled DM, (3) uncontrolled DM, (4) controlled DR and (5) uncontrolled DR, were identified. The one-way analyses of variance (ANOVA) between adjacent study groups (i. e. 1 with 2, 2 with 3, etc) indicated differences in retinal thicknesses and ratios. Overall retinal thickness, ganglion cell layer (GCL) thickness, inner plexiform layer (IPL) thickness, and their combination (GCL+ IPL), appeared to be significantly less in the uncontrolled DM group when compared to controlled DM and controlled DR groups. Although the combination of nerve fiber layer (NFL) and GCL, and IPL thicknesses were not different, their ratio, (NFL+GCL)/IPL, was found to be significantly higher in the controlled DM group compared to the HC group. Comparisons of the controlled DR group with the controlled DM group, and with the uncontrolled DR group, do not show any differences in the layer thicknesses, though several significant ratios were obtained. Ratiometric analysis may provide more sensitive parameters for detecting changes in DR. Picture: A representative segmented OCT image of the human retina is shown. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laser generated guided waves and finite element modeling for the thickness gauging of thin layers.

Science.gov (United States)

Lefevre, F; Jenot, F; Ouaftouh, M; Duquennoy, M; Ourak, M

2010-03-01

In this paper, nondestructive testing has been performed on a thin gold layer deposited on a 2 in. silicon wafer. Guided waves were generated and studied using a laser ultrasonic setup and a two-dimensional fast Fourier transform technique was employed to obtain the dispersion curves. A gold layer thickness of 1.33 microm has been determined with a +/-5% margin of error using the shape of the two first propagating modes, assuming for the substrate and the layer an uncertainty on the elastic parameters of +/-2.5%. A finite element model has been implemented to validate the data post-treatment and the experimental results. A good agreement between the numerical simulation, the analytical modeling and the experimentations has been observed. This method was considered suitable for thickness layer higher than 0.7 microm.

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

KAUST Repository

Majid, Mohammed A.

2016-03-07

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

KAUST Repository

Majid, Mohammed Abdul; Al-Jabr, Ahmad; Elafandy, Rami T.; Oubei, Hassan M.; Alias, Mohd Sharizal; Alnahhas, Bayan A.; Anjum, Dalaver H.; Ng, Tien Khee; Shehata, Mohamed; Ooi, Boon S.

2016-01-01

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Ta thickness-dependent perpendicular magnetic anisotropy features in Ta/CoFeB/MgO/W free layer stacks

Energy Technology Data Exchange (ETDEWEB)

Yang, SeungMo; Lee, JaBin; An, GwangGuk [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, JaeHong [Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, WooSeong [Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, JinPyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2015-07-31

We describe Ta underlayer thickness influence on thermal stability of perpendicular magnetic anisotropy in Ta/CoFeB/MgO/W stacks. It is believed that thermal stability based on Ta underlay is associated with thermally-activated Ta atom diffusion during annealing. The difference in Ta thickness-dependent diffusion behaviors was confirmed with X-ray photoelectron spectroscopy analysis. Along with a feasible Ta thickness model, our observations suggest that an appropriate seed layer choice is needed for high temperature annealing stability, a critical issue in the memory industry. - Highlights: • We observed changes in the diffusion behavior with regard to Ta seed layer thickness. • It was observed that a thinner Ta seed layer induced more annealing-stable features. • However, ultra-thin (0.75 nm) Ta shows unstable characteristics about the annealing process. • It was possibly due to a rugged interface of the Ta layer by the island growth process.

Within-subjects assessment of the within-compound associations resulting from intermixed and blocked preexposure schedules.

Science.gov (United States)

Rodríguez, Gabriel; Alonso, Gumersinda

2015-03-01

Nonhungry rats received training consisting of intermixed presentations of a compound flavor and an element of that compound (AX, X, AX, X, . . .), and then a separate block of presentations of another compound (BX, BX, BX, . . .). Stimuli A and B were two odor solutions (almond and vanilla), and stimulus X was a highly concentrated solution of sucrose. After training, a state of hunger was induced in the rats, and their consumption levels of A and B alone were tested. We found higher test consumption of B than of A (Exp. 1). We interpreted these differences as indicating that the B-X association had become stronger than the A-X association as a result of the training. In Experiment 2, we demonstrated that the presence of X during training was necessary for that effect to appear (Exp. 2). These results give support to the recent proposal that within-compound associations are maintained better by blocked than by intermixed preexposure (Rodríguez & Alonso, 2014). We discuss the implications of this difference for explaining the intermixed-blocked perceptual-learning effect.

Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates

International Nuclear Information System (INIS)

Zhuang Huihui; Yan Jinliang; Xu Chengyang; Meng Delan

2014-01-01

Cu and Cu/ITO films were prepared on polyethylene terephthalate (PET) substrates with a Ga 2 O 3 buffer layer using radio frequency (RF) and direct current (DC) magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga 2 O 3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu(4.2 nm)/ITO(30 nm) films were investigated with respect to the Ga 2 O 3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga 2 O 3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10 −3 Ω −1 were achieved for Cu(4.2 nm)/ITO(30 nm) films with a Ga 2 O 3 layer thickness of 15 nm. (semiconductor materials)

Photoelectrochemical properties of N-doped self-organized titania nanotube layers with different thicknesses

OpenAIRE

Macak, Jan M.; Ghicov, Andrei; Hahn, Robert; Tsuchiya, Hiroaki; Schmuki, Patrik

2013-01-01

The present work reports nitrogen doping of self-organized TiO2 nanotubular layers. Different thicknesses of the nanotubular layer architecture were formed by electrochemical anodization of Ti in different fluoride-containing electrolytes; tube lengths were 500 nm, 2.5 μm, and 6.1 μm. As-formed nanotube layers were annealed to an anatase structure and treated in ammonia environment at 550 °C to achieve nitrogen doping. The crystal structure, morphology, composition and photoresponse of the N-...

Macular Ganglion Cell Inner Plexiform Layer Thickness in Glaucomatous Eyes with Localized Retinal Nerve Fiber Layer Defects.

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Chunwei Zhang

Full Text Available To investigate macular ganglion cell-inner plexiform layer (mGCIPL thickness in glaucomatous eyes with visible localized retinal nerve fiber layer (RNFL defects on stereophotographs.112 healthy and 149 glaucomatous eyes from the Diagnostic Innovations in Glaucoma Study (DIGS and the African Descent and Glaucoma Evaluation Study (ADAGES subjects had standard automated perimetry (SAP, optical coherence tomography (OCT imaging of the macula and optic nerve head, and stereoscopic optic disc photography. Masked observers identified localized RNFL defects by grading of stereophotographs.47 eyes had visible localized RNFL defects on stereophotographs. Eyes with visible localized RNFL defects had significantly thinner mGCIPL thickness compared to healthy eyes (68.3 ± 11.4 μm versus 79.2 ± 6.6 μm respectively, P<0.001 and similar mGCIPL thickness to glaucomatous eyes without localized RNFL defects (68.6 ± 11.2 μm, P = 1.000. The average mGCIPL thickness in eyes with RNFL defects was 14% less than similarly aged healthy controls. For 29 eyes with a visible RNFL defect in just one hemiretina (superior or inferior mGCIPL was thinnest in the same hemiretina in 26 eyes (90%. Eyes with inferior-temporal RNFL defects also had significantly thinner inferior-temporal mGCIPL (P<0.001 and inferior mGCIPL (P = 0.030 compared to glaucomatous eyes without a visible RNFL defect.The current study indicates that presence of a localized RNFL defect is likely to indicate significant macular damage, particularly in the region of the macular that topographically corresponds to the location of the RNFL defect.

CoFe Layers Thickness and Annealing Effect on the Magnetic Behavior of the CoFe/Cu Multilayer Nanowires

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M. Ahmadzadeh

2015-04-01

Full Text Available CoFe/Cu multilayer nanowires were electrodeposited into anodic aluminum oxide templates prepared by a two-step mild anodization method, using the single-bath technique. Nanowires with 30 nm diameter and the definite lengths were obtained. The effect of CoFe layers thickness and annealing on the magnetic behavior of the multilayer nanowires was investigated. The layers thickness was controlled through the pulses numbers: 200, 260, 310,360 and 410 pulses were used to deposit the CoFe layers, while 300 pulse for the Cu layers. A certain increase in coercivity and squareness of CoFe/Cu multilayer nanowires observed with increasing the CoFe layer thickness and annealing improved the coercivity and decrease squareness of CoFe/Cu multilayer nanowires. First order reversal curves after annealed showed amount domains with soft magnetic phase, it also shows decreasing spreading of distribution function along the Hu axis after annealed

Research on High Layer Thickness Fabricated of 316L by Selective Laser Melting

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Shuo Wang

2017-09-01

Full Text Available Selective laser melting (SLM is a potential additive manufacturing (AM technology. However, the application of SLM was confined due to low efficiency. To improve efficiency, SLM fabrication with a high layer thickness and fine powder was systematically researched, and the void areas and hollow powders can be reduced by using fine powder. Single-track experiments were used to narrow down process parameter windows. Multi-layer fabrication relative density can be reached 99.99% at the exposure time-point distance-hatch space of 120 μs-40 μm-240 μm. Also, the building rate can be up to 12 mm3/s, which is about 3–10 times higher than the previous studies. Three typical defects were found by studying deeply, including the un-melted defect between the molten pools, the micro-pore defect within the molten pool, and the irregular distribution of the splashing phenomenon. Moreover, the microstructure is mostly equiaxed crystals and a small amount of columnar crystals. The averages of ultimate tensile strength, yield strength, and elongation are 625 MPa, 525 MPa, and 39.9%, respectively. As exposure time increased from 80 μs to 200 μs, the grain size is gradually grown up from 0.98 μm to 2.23 μm, the grain aspect ratio is close to 1, and the tensile properties are shown as a downward trend. The tensile properties of high layer thickness fabricated are not significantly different than those with a coarse-powder layer thickness of low in previous research.

Research on High Layer Thickness Fabricated of 316L by Selective Laser Melting.

Science.gov (United States)

Wang, Shuo; Liu, Yude; Shi, Wentian; Qi, Bin; Yang, Jin; Zhang, Feifei; Han, Dong; Ma, Yingyi

2017-09-08

Selective laser melting (SLM) is a potential additive manufacturing (AM) technology. However, the application of SLM was confined due to low efficiency. To improve efficiency, SLM fabrication with a high layer thickness and fine powder was systematically researched, and the void areas and hollow powders can be reduced by using fine powder. Single-track experiments were used to narrow down process parameter windows. Multi-layer fabrication relative density can be reached 99.99% at the exposure time-point distance-hatch space of 120 μs-40 μm-240 μm. Also, the building rate can be up to 12 mm³/s, which is about 3-10 times higher than the previous studies. Three typical defects were found by studying deeply, including the un-melted defect between the molten pools, the micro-pore defect within the molten pool, and the irregular distribution of the splashing phenomenon. Moreover, the microstructure is mostly equiaxed crystals and a small amount of columnar crystals. The averages of ultimate tensile strength, yield strength, and elongation are 625 MPa, 525 MPa, and 39.9%, respectively. As exposure time increased from 80 μs to 200 μs, the grain size is gradually grown up from 0.98 μm to 2.23 μm, the grain aspect ratio is close to 1, and the tensile properties are shown as a downward trend. The tensile properties of high layer thickness fabricated are not significantly different than those with a coarse-powder layer thickness of low in previous research.

Fabrication of tubed functionally graded material by slurry dipping process. Thickness control of dip-coated layer

International Nuclear Information System (INIS)

Watanabe, Ryuzo

1997-03-01

In order to obtain long life fuel cladding tubes for the fast breeder reactor, the concept of functionally graded material was applied for the material combination of Molybdenum/stainless steel/Titanium, in which Titanium and Molybdenum were placed at the inner and outer sides, respectively. Slurry dipping method was employed because of its capability of shape forming and microstructural control. We have hitherto reported the design criteria for the graded layers, preparation of the slurry, and microstructural control of the dip-coated layers. In the present report, the thickness control of the dip-coated layer is described in detail. The thickness of the dip-coated layer depends primarily on the viscosity of the slurry. Nevertheless, for the stable dispersion of the powder in the slurry, which dominates the microstructural homogeneity, an optimum viscosity value is present for the individual slurries. With stable slurries of Ti, Mo, stainless steel powders and their mixtures, the thicknesses of dip-coated layers were controlled in dependence of their viscosities and yield values. For Ti and stainless steel powders and their mixture a PAANa was used as a dispersing agent. A NaHMP was found to be effective for the dispersion of Mo powder and Mo/stainless steel powder mixture. For all slurries tested in the present investigation PVA addition was helpful for the viscosity control. Dip-coating maps have been drawn for the stabilization of the slurries and for the formation of films with a sufficient strength for further manipulation for the slurries with low viscosity (∼10 mPa s). The final film thickness for the low-viscosity slurry with the optimum condition was about 200 μm. The slurries with high viscosities of several hundreds mPa s had a good stability and the yield value was easy to be controlled. The film thickness was able to be adjusted in the size range between several tens and several hundreds μm. The final thickness of the graded layer was determined

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

Science.gov (United States)

Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

2018-06-01

Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

Influence of Clinical Factors and Magnification Correction on Normal Thickness Profiles of Macular Retinal Layers Using Optical Coherence Tomography

Science.gov (United States)

Higashide, Tomomi; Ohkubo, Shinji; Hangai, Masanori; Ito, Yasuki; Shimada, Noriaki; Ohno-Matsui, Kyoko; Terasaki, Hiroko; Sugiyama, Kazuhisa; Chew, Paul; Li, Kenneth K. W.; Yoshimura, Nagahisa

2016-01-01

Purpose To identify the factors which significantly contribute to the thickness variabilities in macular retinal layers measured by optical coherence tomography with or without magnification correction of analytical areas in normal subjects. Methods The thickness of retinal layers {retinal nerve fiber layer (RNFL), ganglion cell layer plus inner plexiform layer (GCLIPL), RNFL plus GCLIPL (ganglion cell complex, GCC), total retina, total retina minus GCC (outer retina)} were measured by macular scans (RS-3000, NIDEK) in 202 eyes of 202 normal Asian subjects aged 20 to 60 years. The analytical areas were defined by three concentric circles (1-, 3- and 6-mm nominal diameters) with or without magnification correction. For each layer thickness, a semipartial correlation (sr) was calculated for explanatory variables including age, gender, axial length, corneal curvature, and signal strength index. Results Outer retinal thickness was significantly thinner in females than in males (sr2, 0.07 to 0.13) regardless of analytical areas or magnification correction. Without magnification correction, axial length had a significant positive sr with RNFL (sr2, 0.12 to 0.33) and a negative sr with GCLIPL (sr2, 0.22 to 0.31), GCC (sr2, 0.03 to 0.17), total retina (sr2, 0.07 to 0.17) and outer retina (sr2, 0.16 to 0.29) in multiple analytical areas. The significant sr in RNFL, GCLIPL and GCC became mostly insignificant following magnification correction. Conclusions The strong correlation between the thickness of inner retinal layers and axial length appeared to result from magnification effects. Outer retinal thickness may differ by gender and axial length independently of magnification correction. PMID:26814541

Influence of Clinical Factors and Magnification Correction on Normal Thickness Profiles of Macular Retinal Layers Using Optical Coherence Tomography.

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Tomomi Higashide

Full Text Available To identify the factors which significantly contribute to the thickness variabilities in macular retinal layers measured by optical coherence tomography with or without magnification correction of analytical areas in normal subjects.The thickness of retinal layers {retinal nerve fiber layer (RNFL, ganglion cell layer plus inner plexiform layer (GCLIPL, RNFL plus GCLIPL (ganglion cell complex, GCC, total retina, total retina minus GCC (outer retina} were measured by macular scans (RS-3000, NIDEK in 202 eyes of 202 normal Asian subjects aged 20 to 60 years. The analytical areas were defined by three concentric circles (1-, 3- and 6-mm nominal diameters with or without magnification correction. For each layer thickness, a semipartial correlation (sr was calculated for explanatory variables including age, gender, axial length, corneal curvature, and signal strength index.Outer retinal thickness was significantly thinner in females than in males (sr2, 0.07 to 0.13 regardless of analytical areas or magnification correction. Without magnification correction, axial length had a significant positive sr with RNFL (sr2, 0.12 to 0.33 and a negative sr with GCLIPL (sr2, 0.22 to 0.31, GCC (sr2, 0.03 to 0.17, total retina (sr2, 0.07 to 0.17 and outer retina (sr2, 0.16 to 0.29 in multiple analytical areas. The significant sr in RNFL, GCLIPL and GCC became mostly insignificant following magnification correction.The strong correlation between the thickness of inner retinal layers and axial length appeared to result from magnification effects. Outer retinal thickness may differ by gender and axial length independently of magnification correction.

Influence of Clinical Factors and Magnification Correction on Normal Thickness Profiles of Macular Retinal Layers Using Optical Coherence Tomography.

Science.gov (United States)

Higashide, Tomomi; Ohkubo, Shinji; Hangai, Masanori; Ito, Yasuki; Shimada, Noriaki; Ohno-Matsui, Kyoko; Terasaki, Hiroko; Sugiyama, Kazuhisa; Chew, Paul; Li, Kenneth K W; Yoshimura, Nagahisa

2016-01-01

To identify the factors which significantly contribute to the thickness variabilities in macular retinal layers measured by optical coherence tomography with or without magnification correction of analytical areas in normal subjects. The thickness of retinal layers {retinal nerve fiber layer (RNFL), ganglion cell layer plus inner plexiform layer (GCLIPL), RNFL plus GCLIPL (ganglion cell complex, GCC), total retina, total retina minus GCC (outer retina)} were measured by macular scans (RS-3000, NIDEK) in 202 eyes of 202 normal Asian subjects aged 20 to 60 years. The analytical areas were defined by three concentric circles (1-, 3- and 6-mm nominal diameters) with or without magnification correction. For each layer thickness, a semipartial correlation (sr) was calculated for explanatory variables including age, gender, axial length, corneal curvature, and signal strength index. Outer retinal thickness was significantly thinner in females than in males (sr2, 0.07 to 0.13) regardless of analytical areas or magnification correction. Without magnification correction, axial length had a significant positive sr with RNFL (sr2, 0.12 to 0.33) and a negative sr with GCLIPL (sr2, 0.22 to 0.31), GCC (sr2, 0.03 to 0.17), total retina (sr2, 0.07 to 0.17) and outer retina (sr2, 0.16 to 0.29) in multiple analytical areas. The significant sr in RNFL, GCLIPL and GCC became mostly insignificant following magnification correction. The strong correlation between the thickness of inner retinal layers and axial length appeared to result from magnification effects. Outer retinal thickness may differ by gender and axial length independently of magnification correction.

The Effect of LASIK Procedure on Peripapillary Retinal Nerve Fiber Layer and Macular Ganglion Cell-Inner Plexiform Layer Thickness in Myopic Eyes

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Maja Zivkovic

2017-01-01

Full Text Available Purpose. To evaluate the effect of applied suction during microkeratome-assisted laser in situ keratomileusis (LASIK procedure on peripapillary retinal nerve fiber layer (RNFL thickness as well as macular ganglion cell-inner plexiform layer (GC-IPL thickness. Methods. 89 patients (124 eyes with established myopia range from −3.0 to −8.0 diopters and no associated ocular diseases were included in this study. RNFL and GC-IPL thickness measurements were performed by spectral domain optical coherence tomography (SD OCT one day before LASIK and at 1 and 6 months postoperatively. Results. Mean RNFL thickness prior to LASIK was 93.86±12.17 μm while the first month and the sixth month postoperatively were 94.01±12.04 μm and 94.46±12.27 μm, respectively. Comparing results, there is no significant difference between baseline, one month, and six months postoperatively for mean RNFL (p>0.05. Mean GC-IPL thickness was 81.70±7.47 μm preoperatively with no significant difference during the follow-up period (82.03±7.69 μm versus 81.84±7.64 μm; p>0.05. Conclusion. RNFL and GC-IPL complex thickness remained unaffected following LASIK intervention.

Relationship between Outer Retinal Layers Thickness and Visual Acuity in Diabetic Macular Edema

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Raymond L. M. Wong

2015-01-01

Full Text Available Purpose. To investigate the correlation of outer retinal layers (ORL thickness and visual acuity (VA in patients with diabetic macular edema (DME. Methods. Consecutive DME patients seen at the Retina Clinic of The University of Hong Kong were recruited for OCT assessment. The ORL thickness was defined as the distance between external limiting membrane (ELM and retinal pigment epithelium (RPE at the foveal center. The correlation between total retinal thickness, ORL thickness, and vision was calculated. Results. 78 patients with DME were recruited. The mean age was 58.1 years (±11.5 years and their mean visual acuity measured with Snellen chart was 0.51 (±0.18. The correlation coefficient between total retinal thickness and visual acuity was 0.34 (P < 0.001 whereas the correlation coefficient was 0.65 between ORL thickness and visual acuity (P < 0.001. Conclusion. ORL thickness correlates better with vision than the total retinal thickness. It is a novel OCT parameter in the assessment of DME. Moreover, it could be a potential long term visual prognostic factor for patients with DME.

Non-Toxic Buffer Layers in Flexible Cu(In,GaSe2 Photovoltaic Cell Applications with Optimized Absorber Thickness

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Md. Asaduzzaman

2017-01-01

Full Text Available Absorber layer thickness gradient in Cu(In1−xGaxSe2 (CIGS based solar cells and several substitutes for typical cadmium sulfide (CdS buffer layers, such as ZnS, ZnO, ZnS(O,OH, Zn1−xSnxOy (ZTO, ZnSe, and In2S3, have been analyzed by a device emulation program and tool (ADEPT 2.1 to determine optimum efficiency. As a reference type, the CIGS cell with CdS buffer provides a theoretical efficiency of 23.23% when the optimum absorber layer thickness was determined as 1.6 μm. It is also observed that this highly efficient CIGS cell would have an absorber layer thickness between 1 μm and 2 μm whereas the optimum buffer layer thickness would be within the range of 0.04–0.06 μm. Among all the cells with various buffer layers, the best energy conversion efficiency of 24.62% has been achieved for the ZnO buffer layer based cell. The simulation results with ZnS and ZnO based buffer layer materials instead of using CdS indicate that the cell performance would be better than that of the CdS buffer layer based cell. Although the cells with ZnS(O,OH, ZTO, ZnSe, and In2S3 buffer layers provide slightly lower efficiencies than that of the CdS buffer based cell, the use of these materials would not be deleterious for the environment because of their non-carcinogenic and non-toxic nature.

Determination of thickness of thin turbid painted over-layers using micro-scale spatially offset Raman spectroscopy

Science.gov (United States)

Conti, Claudia; Realini, Marco; Colombo, Chiara; Botteon, Alessandra; Bertasa, Moira; Striova, Jana; Barucci, Marco; Matousek, Pavel

2016-12-01

We present a method for estimating the thickness of thin turbid layers using defocusing micro-spatially offset Raman spectroscopy (micro-SORS). The approach, applicable to highly turbid systems, enables one to predict depths in excess of those accessible with conventional Raman microscopy. The technique can be used, for example, to establish the paint layer thickness on cultural heritage objects, such as panel canvases, mural paintings, painted statues and decorated objects. Other applications include analysis in polymer, biological and biomedical disciplines, catalytic and forensics sciences where highly turbid overlayers are often present and where invasive probing may not be possible or is undesirable. The method comprises two stages: (i) a calibration step for training the method on a well characterized sample set with a known thickness, and (ii) a prediction step where the prediction of layer thickness is carried out non-invasively on samples of unknown thickness of the same chemical and physical make up as the calibration set. An illustrative example of a practical deployment of this method is the analysis of larger areas of paintings. In this case, first, a calibration would be performed on a fragment of painting of a known thickness (e.g. derived from cross-sectional analysis) and subsequently the analysis of thickness across larger areas of painting could then be carried out non-invasively. The performance of the method is compared with that of the more established optical coherence tomography (OCT) technique on identical sample set. This article is part of the themed issue "Raman spectroscopy in art and archaeology".

Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

International Nuclear Information System (INIS)

Das, D; Gopikrishna, P; Singh, A; Dey, A; Iyer, P K

2016-01-01

Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (R P ) and the parallel capacitance (C P ). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m 2 . (paper)

Influences of layer thickness on the compatibility and physical properties of polycarbonate/polystyrene multilayered film via nanolayer coextrusion

Science.gov (United States)

Cheng, Junfeng; Chen, Zhiru; Zhou, Jiaqi; Cao, Zheng; Wu, Dun; Liu, Chunlin; Pu, Hongting

2018-05-01

The effects of layer thickness on the compatibility between polycarbonate (PC) and polystyrene (PS) and physical properties of PC/PS multilayered film via nanolayer coextrusion are studied. The morphology of multilayered structure is observed using a scanning electron microscope. This multilayered structure may have a negative impact on the transparency, but it can improve the water resistance and heat resistance of film. To characterize the compatibility between PC and PS, differential scanning calorimetry is used to measure the glass transition temperature. The compatibility is found to be improved with the decrease of layer thickness. Therefore, the viscosity of multilayered film is also reduced with the decrease of layer thickness. In addition, the multilayered structure can improve the tensile strength with the increase of layer numbers. Because of the complete and continuous layer structure of PC, the PC/PS multilayered film can retain its mechanical strength at the temperature above Tg of PS.

Adsorbed polymers in aqueous media. The relation between zeta-potential, layer thickness and ionic strength

NARCIS (Netherlands)

Cohen Stuart, M.A.; Mulder, J.W.

1985-01-01

Streaming potentials for glass capillaries with and without adsorbed poly(vinyl pyrrolidone) were used to determine the thickness of the adsorbed polymer layer. It was found that the thickness determined in this way is a strong function of the ionic strength of the solution. The results are compared

Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

Science.gov (United States)

Li, Zhi-Yue; Yang, Hao-Zhi; Chen, Sheng-Chi; Lu, Ying-Bo; Xin, Yan-Qing; Yang, Tian-Lin; Sun, Hui

2018-05-01

Nitrogen-doped indium tin zinc oxide (ITZO:N) thin film transistors (TFTs) were deposited on SiO2 (200 nm)/p-Si〈1 0 0〉 substrates by RF magnetron sputtering at room temperature. The structural, chemical compositions, surface morphology, optical and electrical properties as a function of the active layer thickness were investigated. As the active layer thickness increases, Zn content decreases and In content increases gradually. Meanwhile, Sn content is almost unchanged. When the thickness of the active layer is more than 45 nm, the ITZO:N films become crystallized and present a crystal orientation along InN(0 0 2) plan. No matter what the thickness is, ITZO:N films always display a high transmittance above 80% in the visible region. Their optical band gaps fluctuate between 3.4 eV and 3.62 eV. Due to the dominance of low interface trap density and high carrier concentration, ITZO:N TFT shows enhanced electrical properties as the active layer thickness is 35 nm. Its field-effect mobility, on/off radio and sub-threshold swing are 17.53 cm2 V‑1 · s‑1, 106 and 0.36 V/dec, respectively. These results indicate that the suitable thickness of the active layer can enhance the quality of ITZO:N films and decrease the defects density of ITZO:N TFT. Thus, the properties of ITZO:N TFT can be optimized by adjusting the thickness of the active layer.

Growth optimization for thick crack-free GaN layers on sapphire with HVPE

Energy Technology Data Exchange (ETDEWEB)

Richter, E.; Hennig, Ch.; Kissel, H.; Sonia, G.; Zeimer, U.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, 12489 Berlin (Germany)

2005-05-01

Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H{sub 2}/N{sub 2} as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 {mu}m thick GaN/sapphire templates grown by MOVPE with medium compressive strain {epsilon}{sub zz} of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

RNA-Seq reveals seven promising candidate genes affecting the proportion of thick egg albumen in layer-type chickens.

Science.gov (United States)

Wan, Yi; Jin, Sihua; Ma, Chendong; Wang, Zhicheng; Fang, Qi; Jiang, Runshen

2017-12-22

Eggs with a much higher proportion of thick albumen are preferred in the layer industry, as they are favoured by consumers. However, the genetic factors affecting the thick egg albumen trait have not been elucidated. Using RNA sequencing, we explored the magnum transcriptome in 9 Rhode Island white layers: four layers with phenotypes of extremely high ratios of thick to thin albumen (high thick albumen, HTA) and five with extremely low ratios (low thick albumen, LTA). A total of 220 genes were differentially expressed, among which 150 genes were up-regulated and 70 were down-regulated in the HTA group compared with the LTA group. Gene Ontology (GO) analysis revealed that the up-regulated genes in HTA were mainly involved in a wide range of regulatory functions. In addition, a large number of these genes were related to glycosphingolipid biosynthesis, focal adhesion, ECM-receptor interactions and cytokine-cytokine receptor interactions. Based on functional analysis, ST3GAL4, FUT4, ITGA2, SDC3, PRLR, CDH4 and GALNT9 were identified as promising candidate genes for thick albumen synthesis and metabolism during egg formation. These results provide new insights into the molecular mechanisms of egg albumen traits and may contribute to future breeding strategies that optimise the proportion of thick egg albumen.

Study on Reduction Kinetics of Briquettes of Hematite Fines with Boiler Grade Coal and Coke Dust in Two Different Forms: Intermixing and Multilayered

Science.gov (United States)

Roy, Gopal Ghosh; Sarkar, Bitan Kumar; Chaudhuri, Mahua Ghosh; Mitra, Manoj Kumar; Dey, Rajib

2017-10-01

An attempt has been made to utilise hematite ore fines in the form of briquettes with two different form of mixing i.e. intermixing and multilayered by means of carbothermal reduction along with boiler grade coal and coke dust. The influence of reduction temperature (1323, 1373 and 1423 K) and reduction time (10, 20, 30, 45 and 60 min) has been investigated in detail and the reduced briquettes are characterised by XRD, SEM analyses. The reducibility of intermixing briquettes is found to be higher for multilayered briquettes. In addition, isothermal kinetic study has also been carried out for both intermixing and multilayered briquettes. The activation energy for intermixing briquettes are evaluated to be 125.88 kJ/mol for the initial stage of reaction (CG3 controlled mechanism) and 113.11 kJ/mol for the later part of reaction (D3 controlled mechanism), respectively. In case of multilayered briquettes, the corresponding activation energy is found to be 235.59 kJ/mol for reaction (CG3 controlled mechanism). These results corroborate the observed better reducibility of the intermixing briquettes over multilayered briquettes.

Chip-scale pattern modification method for equalizing residual layer thickness in nanoimprint lithography

Science.gov (United States)

Youn, Sung-Won; Suzuki, Kenta; Hiroshima, Hiroshi

2018-06-01

A software program for modifying a mold design to obtain a uniform residual layer thickness (RLT) distribution has been developed and its validity was verified by UV-nanoimprint lithography (UV-NIL) simulation. First, the effects of granularity (G) on both residual layer uniformity and filling characteristics were characterized. For a constant complementary pattern depth and a granularity that was sufficiently larger than the minimum pattern width, filling time decreased with the decrease in granularity. For a pattern design with a wide density range and an irregular distribution, the choice of a small granularity was not always a good strategy since the etching depth required for a complementary pattern occasionally exceptionally increased with the decrease in granularity. On basis of the results obtained, the automated method was applied to a chip-scale pattern modification. Simulation results showed a marked improvement in residual layer thickness uniformity for a capacity-equalized (CE) mold. For the given conditions, the standard deviation of RLT decreased in the range from 1/3 to 1/5 in accordance with pattern designs.

Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots

Energy Technology Data Exchange (ETDEWEB)

Li, Q; Barik, S; Tan, H H; Jagadish, C [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra 0200 (Australia)

2008-10-21

Temperature dependent photoluminescence spectra of ion implanted InAs/InP quantum dots (QDs) followed by rapid thermal annealing were studied. By employing a recently developed luminescence model for localized states ensemble, the broadening of the distribution of the localized QD states was determined from the fitting to the luminescence peak energy positions. The broadening of the distribution of the localized QD states reduces due to ion-implantation enhanced intermixing. The contribution of carrier distribution within the localized QD states to the luminescence linewidth decreases after ion-implantation enhanced intermixing. The effect of doses and types of ions used for implantation were also investigated.

Energy and angular distribution of electrons after transmission of thick layers

International Nuclear Information System (INIS)

Kreyling, H.

1975-01-01

In this work, the behaviour of electrons going through material-layers is studied. For a layer-thickness where the theories of multiple-scattering are no longer valid, a Monte-Carlo-method is presented for the calculation of energy distributions as a function of scattering-angle. Plastic-scintillator-material (NE 102 A produced by Nuclear Enterprises Ltd.) was bombarded by electrons with energies between 0.5 and 2.0 MeV and the energy-distributions of the electrons, scatterd in the layer, were measured as a function of the scattering-angle. With the aid of the Monte-Carlo-method developed in this paper, energy distributions were calculated as a function of scattering-angle for the two absorber materials aluminium (single-element material) and NE 102 A (chemical compound of C, N, H, O). (orig./WL) [de

Adhesion-enhanced thick copper film deposition on aluminum oxide by an ion-beam-mixed Al seed layer

International Nuclear Information System (INIS)

Kim, Hyung-Jin; Park, Jae-Won

2012-01-01

We report a highly-adherent 30-μm Cu conductive-path coating on an aluminum-oxide layer anodized on an aluminum-alloy substrate for a metal-printed circuit-board application. A 50-nm Al layer was first coated with an e-beam evaporative deposition method on the anodized oxide, followed by ion bombardment to mix the interfacial region. Subsequently, a Cu coating was deposited onto the mixed seed layer to the designed thickness. Adhesions of the interface were tested by using tape adhesion test, and pull-off tests and showed commercially acceptable adhesions for such thick coating layers. The ion beam mixing (IBM) plays the role of fastening the thin seed coating layer to the substrate and enhancing the adhesion of the Cu conductive path on the anodized aluminum surface.

Magnetic properties of Pr-Fe-B thick-film magnets deposited on Si substrates with glass buffer layer

Science.gov (United States)

Nakano, M.; Kurosaki, A.; Kondo, H.; Shimizu, D.; Yamaguchi, Y.; Yamashita, A.; Yanai, T.; Fukunaga, H.

2018-05-01

In order to improve the magnetic properties of PLD-made Pr-Fe-B thick-film magnets deposited on Si substrates, an adoption of a glass buffer layer was carried out. The glass layer could be fabricated under the deposition rate of approximately 70 μm/h on a Si substrate using a Nd-YAG pulse laser in the vacuum atmosphere. The use of the layer enabled us to reduce the Pr content without a mechanical destruction and enhance (BH)max value by approximately 20 kJ/m3 compared with the average value of non-buffer layered Pr-Fe-B films with almost the same thickness. It is also considered that the layer is also effective to apply a micro magnetization to the films deposited on Si ones.

Computed tomography evaluation of human mandibles with regard to layer thickness and bone density of the cortical bone

International Nuclear Information System (INIS)

Markwardt, Jutta; Meissner, H.; Weber, A.; Reitemeier, B.; Laniado, M.

2013-01-01

Application of function-restoring individual implants for the bridging of defects in mandibles with continuity separation requires a stable fixation with special use of the cortical bone stumps. Five section planes each of 100 computed tomographies of poly-traumatized patients' jaws were used for measuring the thickness of the cortical layer and the bone density of the mandible. The CT scans of 28 female and 72 male candidates aged between 12 and 86 years with different dentition of the mandible were available. The computed tomographic evaluations of human mandibles regarding the layer thickness of the cortical bone showed that the edge of the mandible in the area of the horizontal branch possesses the biggest layer thickness of the whole of the lower jaws. The highest medians of the cortical bone layer thickness were found in the area of the molars and premolars at the lower edge of the lower jaws in 6-o'clock position, in the area of the molars in the vestibular cranial 10-o'clock position and in the chin region lingual-caudal in the 4-o'clock position. The measurement of the bone density showed the highest values in the 8-o'clock position (vestibular-caudal) in the molar region in both males and females. The average values available of the bone density and the layer thickness of the cortical bone in the various regions of the lower jaw, taking into consideration age, gender and dentition, are an important aid in practice for determining a safe fixation point for implants in the area of the surface layer of the mandible by means of screws or similar fixation elements. (orig.)

Segmented inner plexiform layer thickness as a potential biomarker to evaluate open-angle glaucoma: Dendritic degeneration of retinal ganglion cell.

Directory of Open Access Journals (Sweden)

Eun Kyoung Kim

Full Text Available To evaluate the changes of retinal nerve fiber layer (RNFL, ganglion cell layer (GCL, inner plexiform layer (IPL, and ganglion cell-inner plexiform layer (GCIPL thicknesses and compare structure-function relationships of 4 retinal layers using spectral-domain optical coherence tomography (SD-OCT in macular region of glaucoma patients.In cross-sectional study, a total of 85 eyes with pre-perimetric to advanced glaucoma and 26 normal controls were enrolled. The glaucomatous eyes were subdivided into three groups according to the severity of visual field defect: a preperimetric glaucoma group, an early glaucoma group, and a moderate to advanced glaucoma group. RNFL, GCL, IPL, and GCIPL thicknesses were measured at the level of the macula by the Spectralis (Heidelberg Engineering, Heidelberg, Germany SD-OCT with automated segmentation software. For functional evaluation, corresponding mean sensitivity (MS values were measured using 24-2 standard automated perimetry (SAP.RNFL, GCL, IPL, and GCIPL thicknesses were significantly different among 4 groups (P < .001. Macular structure losses were positively correlated with the MS values of the 24-2 SAP for RNFL, GCL, IPL, and GCIPL (R = 0.553, 0.636, 0.648 and 0.646, respectively, P < .001. In regression analysis, IPL and GCIPL thicknesses showed stronger association with the corresponding MS values of 24-2 SAP compared with RNFL and GCL thicknesses (R2 = 0.420, P < .001 for IPL; R2 = 0.417, P< .001 for GCIPL thickness.Segmented IPL thickness was significantly associated with the degree of glaucoma. Segmental analysis of the inner retinal layer including the IPL in macular region may provide valuable information for evaluating glaucoma.

Segmented inner plexiform layer thickness as a potential biomarker to evaluate open-angle glaucoma: Dendritic degeneration of retinal ganglion cell.

Science.gov (United States)

Kim, Eun Kyoung; Park, Hae-Young Lopilly; Park, Chan Kee

2017-01-01

To evaluate the changes of retinal nerve fiber layer (RNFL), ganglion cell layer (GCL), inner plexiform layer (IPL), and ganglion cell-inner plexiform layer (GCIPL) thicknesses and compare structure-function relationships of 4 retinal layers using spectral-domain optical coherence tomography (SD-OCT) in macular region of glaucoma patients. In cross-sectional study, a total of 85 eyes with pre-perimetric to advanced glaucoma and 26 normal controls were enrolled. The glaucomatous eyes were subdivided into three groups according to the severity of visual field defect: a preperimetric glaucoma group, an early glaucoma group, and a moderate to advanced glaucoma group. RNFL, GCL, IPL, and GCIPL thicknesses were measured at the level of the macula by the Spectralis (Heidelberg Engineering, Heidelberg, Germany) SD-OCT with automated segmentation software. For functional evaluation, corresponding mean sensitivity (MS) values were measured using 24-2 standard automated perimetry (SAP). RNFL, GCL, IPL, and GCIPL thicknesses were significantly different among 4 groups (P < .001). Macular structure losses were positively correlated with the MS values of the 24-2 SAP for RNFL, GCL, IPL, and GCIPL (R = 0.553, 0.636, 0.648 and 0.646, respectively, P < .001). In regression analysis, IPL and GCIPL thicknesses showed stronger association with the corresponding MS values of 24-2 SAP compared with RNFL and GCL thicknesses (R2 = 0.420, P < .001 for IPL; R2 = 0.417, P< .001 for GCIPL thickness). Segmented IPL thickness was significantly associated with the degree of glaucoma. Segmental analysis of the inner retinal layer including the IPL in macular region may provide valuable information for evaluating glaucoma.

Investigation of InAs/GaSb-based superlattices by diffraction methods

Energy Technology Data Exchange (ETDEWEB)

Ashuach, Y.; Kauffmann, Y.; Lakin, E. [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.i [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Grossman, S.; Klin, O.; Weiss, E. [SCD, SemiConductor Devices, P. O. Box 2250, Haifa 31021 (Israel)

2010-02-15

We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAs/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin InSb sub-layers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers.

Effect of the thickness of Zn(BTZ)2 emitting layer on the electroluminescent spectra of white organic light-emitting diodes

International Nuclear Information System (INIS)

Zhu, F.J.; Hua, Y.L.; Yin, S.G.; Deng, J.C.; Wu, K.W.; Niu, X.; Wu, X.M.; Petty, M.C.

2007-01-01

White organic light-emitting diodes (OLEDs) are fabricated with a simple bilayer structure: ITO/TPD/ Zn(BTZ) 2 /Al. White emission is composed of two parts: one is 470 nm, which originates from exciton emission in Zn(BTZ) 2 emitting layer; the other is 580 nm, which originates from exciplexes formation at the interface of TPD and Zn(BTZ) 2 . Specially, the thickness of Zn(BTZ) 2 layer effects the relative intensity of two emissions. When the Zn(BTZ) 2 layer becomes thin (or thick), the 470 nm (or 580 nm) emission intensity turns into weak (or strong). Finally, We successfully fabricated pure white OLED when the thickness of Zn(BTZ) 2 layer was 65 nm

Nanomechanical properties of thick porous silicon layers grown on p- and p+-type bulk crystalline Si

International Nuclear Information System (INIS)

Charitidis, C.A.; Skarmoutsou, A.; Nassiopoulou, A.G.; Dragoneas, A.

2011-01-01

Highlights: → The nanomechanical properties of bulk crystalline Si. → The nanomechanical properties of porous Si. → The elastic-plastic deformation of porous Si compared to bulk crystalline quantified by nanoindentation data analysis. - Abstract: The nanomechanical properties and the nanoscale deformation of thick porous Si (PSi) layers of two different morphologies, grown electrochemically on p-type and p+-type Si wafers were investigated by the depth-sensing nanoindentation technique over a small range of loads using a Berkovich indenter and were compared with those of bulk crystalline Si. The microstructure of the thick PSi layers was characterized by field emission scanning electron microscopy. PSi layers on p+-type Si show an anisotropic mesoporous structure with straight vertical pores of diameter in the range of 30-50 nm, while those on p-type Si show a sponge like mesoporous structure. The effect of the microstructure on the mechanical properties of the layers is discussed. It is shown that the hardness and Young's modulus of the PSi layers exhibit a strong dependence on their microstructure. In particular, PSi layers with the anisotropic straight vertical pores show higher hardness and elastic modulus values than sponge-like layers. However, sponge-like PSi layers reveal less plastic deformation and higher wear resistance compared with layers with straight vertical pores.

Interface morphology of Mo/Si multilayer systems with varying Mo layer thickness studied by EUV diffuse scattering.

Science.gov (United States)

Haase, Anton; Soltwisch, Victor; Braun, Stefan; Laubis, Christian; Scholze, Frank

2017-06-26

We investigate the influence of the Mo-layer thickness on the EUV reflectance of Mo/Si mirrors with a set of unpolished and interface-polished Mo/Si/C multilayer mirrors. The Mo-layer thickness is varied in the range from 1.7 nm to 3.05 nm. We use a novel combination of specular and diffuse intensity measurements to determine the interface roughness throughout the multilayer stack and do not rely on scanning probe measurements at the surface only. The combination of EUV and X-ray reflectivity measurements and near-normal incidence EUV diffuse scattering allows to reconstruct the Mo layer thicknesses and to determine the interface roughness power spectral density. The data analysis is conducted by applying a matrix method for the specular reflection and the distorted-wave Born approximation for diffuse scattering. We introduce the Markov-chain Monte Carlo method into the field in order to determine the respective confidence intervals for all reconstructed parameters. We unambiguously detect a threshold thickness for Mo in both sample sets where the specular reflectance goes through a local minimum correlated with a distinct increase in diffuse scatter. We attribute that to the known appearance of an amorphous-to-crystallization transition at a certain thickness threshold which is altered in our sample system by the polishing.

On the Fundamental Mode Love Wave in Devices Incorporating Thick Viscoelastic Layers

International Nuclear Information System (INIS)

Liu Jian-Sheng; Wang Li-Jun; He Shi-Tang

2015-01-01

A detailed investigation is presented for Love waves (LWs) with thick viscoelastic guiding layers. A theoretical calculation and an experiment are carried out for LW devices incorporating an SU-8 guiding layer, an ST-90° X quartz substrate and two 28-μm periodic interdigital transducers. Both the calculated and the measured results show an increase in propagation velocity when h/λ > 0.05. The measured insertion loss of LWs is consistent with the calculated propagation loss. The insertion loss of bulk waves is also measured and is compared with that of LWs. (paper)

Retinal nerve fiber layer thickness map determined from optical coherence tomography images

NARCIS (Netherlands)

Mujat, M.; Chan, R. C.; Cense, B.; Park, B.H.; Joo, C.; Akkin, T.; Chen, TC; de Boer, JF

2005-01-01

We introduce a method to determine the retinal nerve fiber layer (RNFL) thickness in OCT images based on anisotropic noise suppression and deformable splines. Spectral-Domain Optical Coherence Tomography (SDOCT) data was acquired at 29 kHz A-line rate with a depth resolution of 2.6 mum and a depth

Influence of the phenomena occurring at the interface between L1{sub 0}-ordered-FePt and Fe on the coercivity behavior

Energy Technology Data Exchange (ETDEWEB)

Carbucicchio, Massimo, E-mail: massimo.carbucicchio@ino.it [University of Parma, Physics Department (Italy)

2016-12-15

L1{sub 0}-ordered FePt/Fe thin bi-layers were grown using a molecular beam epitaxy onto (100)-MgO substrates changing the soft Fe layer thickness. The study of the intermixing phenomena occurring at the hard/soft interfaces was carried out using surface Mössbauer spectroscopy. The magnetic properties of the samples were analyzed with a magneto-optical Kerr effect magnetometer. The surface morphology and the magnetic domains were analyzed with an UHV atomic and magnetic force microscopy in tapping and lift mode respectively.The present work clearly demonstrates that the degree of interface intermixing and reactions is the responsible for the coercivity behavior in exchange-spring magnets.

Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

Science.gov (United States)

Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C. A. F.; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi

2018-05-01

Polycrystalline Mn3Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3–9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

Science.gov (United States)

Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

2017-09-01

The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

Analysis of macular and nerve fiber layer thickness in multiple sclerosis patients according to severity level and optic neuritis episodes.

Science.gov (United States)

Soler García, A; Padilla Parrado, F; Figueroa-Ortiz, L C; González Gómez, A; García-Ben, A; García-Ben, E; García-Campos, J M

2016-01-01

Quantitative assessment of macular and nerve fibre layer thickness in multiple sclerosis patients with regard to expanded disability status scale (EDSS) and presence or absence of previous optic neuritis episodes. We recruited 62 patients with multiple sclerosis (53 relapsing-remitting and 9 secondary progressive) and 12 disease-free controls. All patients underwent an ophthalmological examination, including quantitative analysis of the nerve fibre layer and macular thickness using optical coherence tomography. Patients were classified according to EDSS as A (lower than 1.5), B (between 1.5 and 3.5), and C (above 3.5). Mean nerve fibre layer thickness in control, A, B, and C groups was 103.35±12.62, 99.04±14.35, 93.59±15.41, and 87.36±18.75μm respectively, with statistically significant differences (P<.05). In patients with no history of optic neuritis, history of episodes in the last 3 to 6 months, or history longer than 6 months, mean nerve fibre layer thickness was 99.25±13.71, 93.92±13.30 and 80.07±15.91μm respectively; differences were significant (P<.05). Mean macular thickness in control, A, B, and C groups was 220.01±12.07, 217.78±20.02, 217.68±20.77, and 219.04±24.26μm respectively. Differences were not statistically significant. The mean retinal nerve fibre layer thickness in multiple sclerosis patients is related to the EDSS level. Patients with previous optic neuritis episodes have a thinner retinal nerve fibre layer than patients with no history of these episodes. Mean macular thickness is not correlated to EDSS level. Copyright © 2014 Sociedad Española de Neurología. Publicado por Elsevier España, S.L.U. All rights reserved.

Dynamic Analysis of Three-Layer Sandwich Beams with Thick Viscoelastic Damping Core for Finite Element Applications

Directory of Open Access Journals (Sweden)

Fernando Cortés

2015-01-01

Full Text Available This paper presents an analysis of the dynamic behaviour of constrained layer damping (CLD beams with thick viscoelastic layer. A homogenised model for the flexural stiffness is formulated using Reddy-Bickford’s quadratic shear in each layer, and it is compared with Ross-Kerwin-Ungar (RKU classical model, which considers a uniform shear deformation for the viscoelastic core. In order to analyse the efficiency of both models, a numerical application is accomplished and the provided results are compared with those of a 2D model using finite elements, which considers extensional and shear stress and longitudinal, transverse, and rotational inertias. The intermediate viscoelastic material is characterised by a fractional derivative model, with a frequency dependent complex modulus. Eigenvalues and eigenvectors are obtained from an iterative method avoiding the computational problems derived from the frequency dependence of the stiffness matrices. Also, frequency response functions are calculated. The results show that the new model provides better accuracy than the RKU one as the thickness of the core layer increases. In conclusion, a new model has been developed, being able to reproduce the mechanical behaviour of thick CLD beams, reducing storage needs and computational time compared with a 2D model, and improving the results from the RKU model.

Simulation and experimental determination of the macro-scale layer thickness distribution of electrodeposited Cu-line patterns on a wafer substrate

DEFF Research Database (Denmark)

Pantleon, Karen; Bossche, Bart van den; Purcar, Marius

2005-01-01

The impact of adjacent patterned zones with different active area densities on the current density and electrodeposited layer thickness distribution over a wafer substrate is examined, both by experiment and numerical simulation. The experiments consist in running an acid copper plating process o......) approach to compute the current density distribution over the electrodes. Experimental and computed layer thickness distributions are in very good agreement.......The impact of adjacent patterned zones with different active area densities on the current density and electrodeposited layer thickness distribution over a wafer substrate is examined, both by experiment and numerical simulation. The experiments consist in running an acid copper plating process...... on the patterned wafer, and layer thickness measurements by means of X-ray fluorescence (XRF) and atomic force microscopy (AFM). The simulations are based on a potential model approach taking into account electrolyte ohmic drop and electrode polarization effects, combined to a boundary element method (BEM...

THE THICKNESS DEPENDENCE OF OXYGEN PERMEABILITY IN SOL-GEL DERIVED CGO-COFE2O4 THIN FILMS ON POROUS CERAMIC SUBSTRATES: A SPUTTERED BLOCKING LAYER FOR THICKNESS CONTROL

Energy Technology Data Exchange (ETDEWEB)

Brinkman, K

2009-01-08

Mixed conductive oxides are a topic of interest for applications in oxygen separation membranes as well as use in producing hydrogen fuel through the partial oxidation of methane. The oxygen flux through the membrane is governed both by the oxygen ionic conductivity as well as the material's electronic conductivity; composite membranes like Ce{sub 0.8}Gd{sub 0.2}O{sub 2-{delta}} (CGO)-CoFe{sub 2}O{sub 4} (CFO) use gadolinium doped ceria oxides as the ionic conducting material combined with cobalt iron spinel which serves as the electronic conductor. In this study we employ {approx} 50 nm sputtered CeO{sub 2} layers on the surface of porous CGO ceramic substrates which serve as solution 'blocking' layers during the thin film fabrication process facilitating the control of film thickness. Films with thickness of {approx} 2 and 4 microns were prepared by depositing 40 and 95 separate sol-gel layers respectively. Oxygen flux measurements indicated that the permeation increased with decreasing membrane thickness; thin film membrane with thickness on the micron level showed flux values an order of magnitude greater (0.03 {micro}mol/cm{sup 2} s) at 800 C as compared to 1mm thick bulk ceramic membranes (0.003 {micro}mol/cm{sup 2}).

Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

Energy Technology Data Exchange (ETDEWEB)

Godbole, M., E-mail: mohit.godbole@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Coetsee, E.; Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa); Neethling, J.H.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 {mu}m. In this particular study, the dots were grown at 450 Degree-Sign C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 {mu}m while the best spacer thickness was found to be 200 nm.

Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

International Nuclear Information System (INIS)

Godbole, M.; Olivier, E.J.; Coetsee, E.; Swart, H.C.; Neethling, J.H.; Botha, J.R.

2012-01-01

Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 μm. In this particular study, the dots were grown at 450 °C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 μm while the best spacer thickness was found to be 200 nm.

THICKNESS OF THE MACULA, RETINAL NERVE FIBER LAYER, AND GANGLION CELL-INNER PLEXIFORM LAYER IN THE AGE-RELATED MACULAR DEGENERATION: The Repeatability Study of Spectral Domain Optical Coherence Tomography.

Science.gov (United States)

Shin, Il-Hwan; Lee, Woo-Hyuk; Lee, Jong-Joo; Jo, Young-Joon; Kim, Jung-Yeul

2018-02-01

To determine the repeatability of measuring the thickness of the central macula, retinal nerve fiber layer, and ganglion cell-inner plexiform layer (GC-IPL) using spectral domain optical coherence tomography (Cirrus HD-OCT) in eyes with age-related macular degeneration. One hundred and thirty-four eyes were included. The measurement repeatability was assessed by an experienced examiner who performed two consecutive measurements using a 512 × 128 macular cube scan and a 200 × 200 optic disk cube scan. To assess changes in macular morphology in patients with age-related macular degeneration, the patients were divided into the following three groups according to the central macular thickness (CMT): A group, CMT 300 μm. Measurement repeatability was assessed using test-retest variability, a coefficient of variation, and an intraclass correlation coefficient. The mean measurement repeatability for the central macular, retinal nerve fiber layer, and GC-IPL thickness was high in the B group. The mean measurement repeatability for both the central macula and retinal nerve fiber layer thickness was high in the A and C groups, but was lower for the GC-IPL thickness. The measurement repeatability for GC-IPL thickness was high in the B group, but low in the A group and in the C group. The automated measurement repeatability for GC-IPL thickness was significantly lower in patients with age-related macular degeneration with out of normal CMT range. The effect of changes in macular morphology should be considered when analyzing GC-IPL thicknesses in a variety of ocular diseases.

Effect of layer thickness in selective laser melting on microstructure of Al/5 wt.%Fe2O3 powder consolidated parts.

Science.gov (United States)

Dadbakhsh, Sasan; Hao, Liang

2014-01-01

In situ reaction was activated in the powder mixture of Al/5 wt.%Fe2O3 by using selective laser melting (SLM) to directly fabricate aluminium metal matrix composite parts. The microstructural characteristics of these in situ consolidated parts through SLM were investigated under the influence of thick powder bed, 75  μm layer thickness, and 50  μm layer thickness in various laser powers and scanning speeds. It was found that the layer thickness has a strong influence on microstructural outcome, mainly attributed to its impact on oxygen content of the matrix. Various microstructural features (such as granular, coralline-like, and particulate appearance) were observed depending on the layer thickness, laser power, and scanning speed. This was associated with various material combinations such as pure Al, Al-Fe intermetallics, and Al(-Fe) oxide phases formed after in situ reaction and laser rapid solidification. Uniformly distributed very fine particles could be consolidated in net-shape Al composite parts by using lower layer thickness, higher laser power, and lower scanning speed. The findings contribute to the new development of advanced net-shape manufacture of Al composites by combining SLM and in situ reaction process.

Effect of precursor concentration and film thickness deposited by layer on nanostructured TiO2 thin films

Science.gov (United States)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

Sol-gel spin coating method is used in the production of nanostructured TiO2 thin film. The surface topology and morphology was observed using the Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The electrical properties were investigated by using two probe current-voltage (I-V) measurements to study the electrical resistivity behavior, hence the conductivity of the thin film. The solution concentration will be varied from 14.0 to 0.01wt% with 0.02wt% interval where the last concentration of 0.02 to 0.01wt% have 0.01wt% interval to find which concentrations have the highest conductivity then the optimized concentration's sample were chosen for the thickness parameter based on layer by layer deposition from 1 to 6 layer. Based on the result, the lowest concentration of TiO2, the surface becomes more uniform and the conductivity will increase. As the result, sample of 0.01wt% concentration have conductivity value of 1.77E-10 S/m and will be advanced in thickness parameter. Whereas in thickness parameter, the 3layer deposition were chosen as its conductivity is the highest at 3.9098E9 S/m.

Leveraging Subsidence in Permafrost with Remotely Sensed Active Layer Thickness (ReSALT) Products

Science.gov (United States)

Schaefer, K. M.; Chen, A.; Chen, J.; Chen, R. H.; Liu, L.; Michaelides, R. J.; Moghaddam, M.; Parsekian, A.; Tabatabaeenejad, A.; Thompson, J. A.; Zebker, H. A.; Meyer, F. J.

2017-12-01

The Remotely Sensed Active Layer Thickness (ReSALT) product uses the Interferometric Synthetic Aperture Radar (InSAR) technique to measure ground subsidence in permafrost regions. Seasonal subsidence results from the expansion of soil water into ice as the surface soil or active layer freezes and thaws each year. Subsidence trends result from large-scale thaw of permafrost and from the melting and subsequent drainage of excess ground ice in permafrost-affected soils. The attached figure shows the 2006-2010 average seasonal subsidence from ReSALT around Barrow, Alaska. The average active layer thickness (the maximum surface thaw depth during summer) is 30-40 cm, resulting in an average seasonal subsidence of 1-3 cm. Analysis of the seasonal subsidence and subsidence trends provides valuable insights into important permafrost processes, such as the freeze/thaw of the active layer, large-scale thawing due to climate change, the impact of fire, and infrastructure vulnerability. ReSALT supports the Arctic-Boreal Vulnerability Experiment (ABoVE) field campaign in Alaska and northwest Canada and is a precursor for a potential NASA-ISRO Synthetic Aperture Radar (NISAR) product. ReSALT includes uncertainties for all parameters and is validated against in situ measurements from the Circumpolar Active Layer Monitoring (CALM) network, Ground Penetrating Radar and mechanical probe measurements. Here we present examples of ReSALT products in Alaska to highlight the untapped potential of the InSAR technique to understand permafrost dynamics, with a strong emphasis on the underlying processes that drive the subsidence.

Highly accurate thickness measurement of multi-layered automotive paints using terahertz technology

Science.gov (United States)

Krimi, Soufiene; Klier, Jens; Jonuscheit, Joachim; von Freymann, Georg; Urbansky, Ralph; Beigang, René

2016-07-01

In this contribution, we present a highly accurate approach for thickness measurements of multi-layered automotive paints using terahertz time domain spectroscopy in reflection geometry. The proposed method combines the benefits of a model-based material parameters extraction method to calibrate the paint coatings, a generalized Rouard's method to simulate the terahertz radiation behavior within arbitrary thin films, and the robustness of a powerful evolutionary optimization algorithm to increase the sensitivity of the minimum thickness measurement limit. Within the framework of this work, a self-calibration model is introduced, which takes into consideration the real industrial challenges such as the effect of wet-on-wet spray in the painting process.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.

2014-11-11

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

KAUST Repository

Alhashim, Hala H.; Khan, Mohammed Zahed Mustafa; Majid, Mohammed Abdul; Ng, Tien Khee; Ooi, Boon S.

2015-01-01

enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175  nm (>148  meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual

Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

International Nuclear Information System (INIS)

Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

2007-01-01

Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

Effect of Layer Thickness in Selective Laser Melting on Microstructure of Al/5 wt.%Fe2O3 Powder Consolidated Parts

Directory of Open Access Journals (Sweden)

Sasan Dadbakhsh

2014-01-01

Full Text Available In situ reaction was activated in the powder mixture of Al/5 wt.%Fe2O3 by using selective laser melting (SLM to directly fabricate aluminium metal matrix composite parts. The microstructural characteristics of these in situ consolidated parts through SLM were investigated under the influence of thick powder bed, 75 μm layer thickness, and 50 μm layer thickness in various laser powers and scanning speeds. It was found that the layer thickness has a strong influence on microstructural outcome, mainly attributed to its impact on oxygen content of the matrix. Various microstructural features (such as granular, coralline-like, and particulate appearance were observed depending on the layer thickness, laser power, and scanning speed. This was associated with various material combinations such as pure Al, Al-Fe intermetallics, and Al(-Fe oxide phases formed after in situ reaction and laser rapid solidification. Uniformly distributed very fine particles could be consolidated in net-shape Al composite parts by using lower layer thickness, higher laser power, and lower scanning speed. The findings contribute to the new development of advanced net-shape manufacture of Al composites by combining SLM and in situ reaction process.

Film thickness degradation of Au/GaN Schottky contact characteristics

International Nuclear Information System (INIS)

Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

2005-01-01

Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

Preparation of ultra-thin and high-quality WO{sub 3} compact layers and comparision of WO{sub 3} and TiO{sub 2} compact layer thickness in planar perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jincheng; Shi, Chengwu, E-mail: shicw506@foxmail.com; Chen, Junjun; Wang, Yanqing; Li, Mingqian

2016-06-15

In this paper, the ultra-thin and high-quality WO{sub 3} compact layers were successfully prepared by spin-coating-pyrolysis method using the tungsten isopropoxide solution in isopropanol. The influence of WO{sub 3} and TiO{sub 2} compact layer thickness on the photovoltaic performance of planar perovskite solar cells was systematically compared, and the interface charge transfer and recombination in planar perovskite solar cells with TiO{sub 2} compact layer was analyzed by electrochemical impedance spectroscopy. The results revealed that the optimum thickness of WO{sub 3} and TiO{sub 2} compact layer was 15 nm and 60 nm. The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. - Graphical abstract: The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. Display Omitted - Highlights: • Preparation of ultra-thin and high-quality WO{sub 3} compact layers. • Perovskite solar cell with 15 nm-thick WO{sub 3} compact layer achieved PCE of 10.14%. • Perovskite solar cell with 60 nm-thick TiO{sub 2} compact layer achieved PCE of 12.64%.

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Science.gov (United States)

Nozaki, Mikito; Watanabe, Kenta; Yamada, Takahiro; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

Alumina incorporating nitrogen (aluminum oxynitride; AlON) for immunity against charge injection was grown on a AlGaN/GaN substrate through the repeated atomic layer deposition (ALD) of AlN layers and in situ oxidation in ozone (O3) ambient under optimized conditions. The nitrogen distribution was uniform in the depth direction, the composition was controllable over a wide range (0.5–32%), and the thickness could be precisely controlled. Physical analysis based on synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) revealed that harmful intermixing at the insulator/AlGaN interface causing Ga out-diffusion in the gate stack was effectively suppressed by this method. AlON/AlGaN/GaN MOS capacitors were fabricated, and they had excellent electrical properties and immunity against electrical stressing as a result of the improved interface stability.

Spatial representation of organic carbon and active-layer thickness of high latitude soils in CMIP5 earth system models

Energy Technology Data Exchange (ETDEWEB)

Mishra, Umakant; Drewniak, Beth; Jastrow, Julie D.; Matamala, Roser M.; Vitharana, U. W. A.

2017-08-01

Soil properties such as soil organic carbon (SOC) stocks and active-layer thickness are used in earth system models (F.SMs) to predict anthropogenic and climatic impacts on soil carbon dynamics, future changes in atmospheric greenhouse gas concentrations, and associated climate changes in the permafrost regions. Accurate representation of spatial and vertical distribution of these soil properties in ESMs is a prerequisite for redudng existing uncertainty in predicting carbon-climate feedbacks. We compared the spatial representation of SOC stocks and active-layer thicknesses predicted by the coupled Modellntercomparison Project Phase 5 { CMIP5) ESMs with those predicted from geospatial predictions, based on observation data for the state of Alaska, USA. For the geospatial modeling. we used soil profile observations {585 for SOC stocks and 153 for active-layer thickness) and environmental variables (climate, topography, land cover, and surficial geology types) and generated fine-resolution (50-m spatial resolution) predictions of SOC stocks (to 1-m depth) and active-layer thickness across Alaska. We found large inter-quartile range (2.5-5.5 m) in predicted active-layer thickness of CMIP5 modeled results and small inter-quartile range (11.5-22 kg m-2) in predicted SOC stocks. The spatial coefficient of variability of active-layer thickness and SOC stocks were lower in CMIP5 predictions compared to our geospatial estimates when gridded at similar spatial resolutions (24.7 compared to 30% and 29 compared to 38%, respectively). However, prediction errors. when calculated for independent validation sites, were several times larger in ESM predictions compared to geospatial predictions. Primaly factors leading to observed differences were ( 1) lack of spatial heterogeneity in ESM predictions, (2) differences in assumptions concerning environmental controls, and (3) the absence of pedogenic processes in ESM model structures. Our results suggest that efforts to incorporate

Pseudomorphic-to-bulk fcc phase transition of thin Ni films on Pd(100)

International Nuclear Information System (INIS)

Rizzi, G.A.; Petukhov, M.; Sedona, F.; Granozzi, G.; Cossaro, A.; Bruno, F.; Cvetko, D.; Morgante, A.; Floreano, L.

2004-01-01

We have measured the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase as a function of the film thickness. We made use of x-ray diffraction and x-ray induced photoemission to study the evolution of the Ni film and its interface with the substrate. The growth of a film with tetragonally strained face centered symmetry (fct) has been observed by out-of-plane x-ray diffraction up to a limit thickness of 10 Ni pseudomorphic layers (some of them partially filled and intermixed with the substrate), where a new fcc bulklike phase is formed. After the formation of the bulklike Ni domains, we observed the pseudomorphic fct domains to disappear preserving the number of layers and their spacing. The phase transition thus proceeds via lateral growth of the bulklike phase within the pseudomorphic one, i.e., the bulklike fcc domains penetrate down to the substrate when formed. This large depth of the walls separating the domains of different phases is also indicated by the increase of the intermixing at the substrate-film interface, which starts at the onset of the transition and continues at even larger thickness. The bulklike fcc phase is also slightly strained; its relaxation towards the orthomorphic lattice structure proceeds slowly with the film thickness, being not yet completed at the maximum thickness presently studied of 30 A (∼17 layers)

Amino Acid Composition, Urease Activity and Trypsin Inhibitor Activity after Toasting of Soybean in Thick and Thin Layer

OpenAIRE

Krička, Tajana; Jurišić, Vanja; Voća, Neven; Ćurić, Duška; Brlek Savić, Tea; Matin, Ana

2009-01-01

The objective of this study was to determine amino acid content, urease activity and trypsin inhibitor activity in soybean grain for polygastric animals’ feed aft er toasting with the aim to introduce thick layer in toasting technology. Hence, soybean was toasted both in thick and thin layer at 130 oC during 10 minutes. In order to properly monitor the technological process of soybean thermal processing, it was necessary to study crude protein content, urease activity, trypsin inhibitor activ...

Study on coated layer material performance of coated particle fuel FBR (2). High temperature property and capability of coating to thick layer of TiN

International Nuclear Information System (INIS)

Naganuma, Masayuki; Mizuno, Tomoyasu

2002-08-01

'Helium Gas Cooled Coated Particle Fuel FBR' is one of attractive core concepts in the Feasibility Study on Commercialized Fast Reactor Cycle System in Japan, and the design study is presently proceeded. As one of key technologies of this concept, the coated layer material is important, and ceramics is considered to be a candidate material because of the superior refractory. Based on existing knowledge, TiN is regarded to be a possible candidate material, to which some property tests and evaluations have been conducted. In this study, preliminary tests about the high temperature property and the capability of thick layer coating of TiN have been conducted. Results of these tests come to the following conclusions. Heating tests of two kinds of TiN layer specimens coated by PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition) were conducted. As a result, as for CVD coating specimens, remarkable charge was not observed on the layer up to 2,000degC, therefore we concluded that the layer by CVD had applicability up to high temperature of actual operation level. On the other hand, as for PVD coating specimens, an unstable behavior that the layer changed to a mesh like texture was observed on a 2,000degC heated specimen, therefore the applied PVD method is not considered to be promising as the coating technique. The surface conditions of some parts inside CVD device were investigated in order to evaluate possibility of TiN thick coating (∼100 μm). As a result, around 500 μm of TiN coating layer was observed on the condition of multilayer. Therefore, we conclude that CVD has capability of coating up to thick layer in actual coated particle fuel fabrication. (author)

The effect of the thicknesses of the various layers on the colour emitted by an organic electroluminescent device

Science.gov (United States)

Jolinat, P.; Clergereaux, R.; Farenc, J.; Destruel, P.

1998-05-01

Organic electroluminescent diodes based on thin organic layers are one of the most promising next-generation systems for the backlighting of the liquid crystal screens. Among other methods to obtain white light, three-layer luminescent devices with each layer emitting one of the three fundamental colours have been studied here. Red, green and blue light were produced by 0022-3727/31/10/018/img1 doped with Nile red, 0022-3727/31/10/018/img1 and TPD layers respectively. A fourth thin film of TAZ has been inserted between TPD and 0022-3727/31/10/018/img1 to control injection of electrons into the TPD. The effect of the layers' thicknesses on the spectral emission of the device has been examined. Results show that the thicknesses of TAZ and doped 0022-3727/31/10/018/img1 layers have to be controlled to within a precision of better than 5 Å. The discussion turns on the possibility of applying this technology to screen backlighting.

Effect of the thickness of Zn(BTZ){sub 2} emitting layer on the electroluminescent spectra of white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhu, F.J. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Hua, Y.L. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China)]. E-mail: yulinhua@tjut.edu.cn; Yin, S.G. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Deng, J.C. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Wu, K.W. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Niu, X. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Wu, X.M. [Institute of Modern Optics, Nankai University, Tianjin 300191 (China); Petty, M.C. [Centre for Molecular and Nanoscale Electronics, University of Durham, Durham DH1 3LE (United Kingdom)

2007-01-15

White organic light-emitting diodes (OLEDs) are fabricated with a simple bilayer structure: ITO/TPD/ Zn(BTZ){sub 2}/Al. White emission is composed of two parts: one is 470 nm, which originates from exciton emission in Zn(BTZ){sub 2} emitting layer; the other is 580 nm, which originates from exciplexes formation at the interface of TPD and Zn(BTZ){sub 2}. Specially, the thickness of Zn(BTZ){sub 2} layer effects the relative intensity of two emissions. When the Zn(BTZ){sub 2} layer becomes thin (or thick), the 470 nm (or 580 nm) emission intensity turns into weak (or strong). Finally, We successfully fabricated pure white OLED when the thickness of Zn(BTZ){sub 2} layer was 65 nm.

Effect of the thickness of the anode electrode catalyst layers on the performance in direct methanol fuel cells

Science.gov (United States)

Glass, Dean E.; Olah, George A.; Prakash, G. K. Surya

2017-06-01

For the large scale fuel cell manufacture, the catalyst loading and layer thickness are critical factors affecting the performance and cost of membrane electrode assemblies (MEAs). The influence of catalyst layer thicknesses at the anode of a PEM based direct methanol fuel cell (DMFC) has been investigated. Catalysts were applied with the drawdown method with varied thicknesses ranging from 1 mil to 8 mils (1 mil = 25.4 μm) with a Pt/Ru anode loading of 0.25 mg cm-2 to 2.0 mg cm-2. The MEAs with the thicker individual layers (8 mils and 4 mils) performed better overall compared to the those with the thinner layers (1 mil and painted). The peak power densities for the different loading levels followed an exponential decrease of Pt/Ru utilization at the higher loading levels. The highest power density achieved was 49 mW cm-2 with the 4 mil layers at 2.0 mg cm-2 catalyst loading whereas the highest normalized power density was 116 mW mg-1 with the 8 mil layers at 0.25 mg cm-2 loading. The 8 mil drawdowns displayed a 50% and 23% increase in normalized power density compared to the 1 mil drawdowns at 0.25 mg cm-2 and 0.5 mg cm-2 loadings, respectively.

Correlation between central corneal thickness and visual field defects, cup to disc ratio and retinal nerve fiber layer thickness in primary open angle glaucoma patients.

Science.gov (United States)

Sarfraz, Muhammad Haroon; Mehboob, Mohammad Asim; Haq, Rana Intisar Ul

2017-01-01

To evaluate the correlation between Central Corneal Thickness (CCT) and Visual Field (VF) defect parameters like Mean Deviation (MD) and Pattern Standard Deviation (PSD), Cup-to-Disc Ratio (CDR) and Retinal Nerve Fibre Layer Thickness (RNFL-T) in Primary Open-Angle Glaucoma (POAG) patients. This cross sectional study was conducted at Armed Forces Institute of Ophthalmology (AFIO), Rawalpindi from September 2015 to September 2016. Sixty eyes of 30 patients with diagnosed POAG were analysed. Correlation of CCT with other variables was studied. Mean age of study population was 43.13±7.54 years. Out of 30 patients, 19 (63.33%) were males and 11 (36.67%) were females. Mean CCT, MD, PSD, CDR and RNFL-T of study population was 528.57±25.47µm, -9.11±3.07, 6.93±2.73, 0.63±0.13 and 77.79±10.44µm respectively. There was significant correlation of CCT with MD, PSD and CDR (r=-0.52, pfield parameters like mean deviation and pattern standard deviation, as well as with cup-to-disc ratio. However, central corneal thickness had no significant relationship with retinal nerve fibre layer thickness.

Normative data of outer photoreceptor layer thickness obtained by software image enhancing based on Stratus optical coherence tomography images

DEFF Research Database (Denmark)

Christensen, U.C.; Krøyer, K.; Thomadsen, Jakob

2008-01-01

backscattered light within the outer nuclear layer (ONL) in the fovea was registered and compared with backscattered light within the ONL in the peripheral part of the macula (I-ratio-ONL). Results: The mean RPE-OScomplex thickness in the foveal centre was 77.2 mu m (SD = 3.95). The RPE-OScomplex thickness...... in the superior macula 0.5-3 mm of the centre was significantly increased as compared with the corresponding inferior retina. In healthy subjects, the I-ratio-ONL was 1.06. Conclusions: Contrast-enhanced OCT images enable quantification of outer photoreceptor layer thickness, and normative values may help...

Pulsations of white dwarf stars with thick hydrogen or helium surface layers

Energy Technology Data Exchange (ETDEWEB)

Cox, A.N.; Starrfield, S.G.; Kidman, R.B.; Pesnell, W.D.

1986-07-01

In order to see if there could be agreement between results of stellar evolution theory and those of nonradial pulsation theory, calculations of white dwarf models have been made for hydrogen surface masses of 10/sup -4/ solar masses. Earlier results indicated that surface masses greater than 10/sup -8/ solar masses would not allow nonradial pulsations, even though all the driving and damping is in surface layers only 10/sup -12/ of the mass thick. It is shown that the surface mass of hydrogen in the pulsating white dwarfs (ZZ Ceti variables) can be any value as long as it is thick enough to contain the surface convection zone. 10 refs., 6 figs.

Highly accurate thickness measurement of multi-layered automotive paints using terahertz technology

International Nuclear Information System (INIS)

Krimi, Soufiene; Beigang, René; Klier, Jens; Jonuscheit, Joachim; Freymann, Georg von; Urbansky, Ralph

2016-01-01

In this contribution, we present a highly accurate approach for thickness measurements of multi-layered automotive paints using terahertz time domain spectroscopy in reflection geometry. The proposed method combines the benefits of a model-based material parameters extraction method to calibrate the paint coatings, a generalized Rouard's method to simulate the terahertz radiation behavior within arbitrary thin films, and the robustness of a powerful evolutionary optimization algorithm to increase the sensitivity of the minimum thickness measurement limit. Within the framework of this work, a self-calibration model is introduced, which takes into consideration the real industrial challenges such as the effect of wet-on-wet spray in the painting process.

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Science.gov (United States)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

Quantification of the effect of oil layer thickness on entrainment of surface oil

NARCIS (Netherlands)

Klaas Dijkstra; Albertinka J. Murk; Marieke Zeinstra-Helfrich; Wierd Koops

2015-01-01

This study quantifies the effect of oil layer thickness on entrainment and dispersion of oil into seawater, using a plunging jet with a camera system. In contrast to what is generally assumed, we revealed that for the low viscosity “surrogate MC252 oil” we used, entrainment rate is directly

Usage of neural network to predict aluminium oxide layer thickness.

Science.gov (United States)

Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

2015-01-01

This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer.

Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

Directory of Open Access Journals (Sweden)

Peter Michal

2015-01-01

Full Text Available This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer.

Retinal nerve fiber layer thickness in normals measured by spectral domain OCT.

Science.gov (United States)

Bendschneider, Delia; Tornow, Ralf P; Horn, Folkert K; Laemmer, Robert; Roessler, Christopher W; Juenemann, Anselm G; Kruse, Friedrich E; Mardin, Christian Y

2010-09-01

To determine normal values for peripapillary retinal nerve fiber layer thickness (RNFL) measured by spectral domain Optical Coherence Tomography (SOCT) in healthy white adults and to examine the relationship of RNFL with age, gender, and clinical variables. The peripapillary RNFL of 170 healthy patients (96 males and 74 females, age 20 to 78 y) was imaged with a high-resolution SOCT (Spectralis HRA+OCT, Heidelberg Engineering) in an observational cross-sectional study. RNFL thickness was measured around the optic nerve head using 16 automatically averaged, consecutive circular B-scans with 3.4-mm diameter. The automatically segmented RNFL thickness was divided into 32 segments (11.25 degrees each). One randomly selected eye per subject entered the study. Mean RNFL thickness in the study population was 97.2 ± 9.7 μm. Mean RNFL thickness was significantly negatively correlated with age (r = -0.214, P = 0.005), mean RNFL decrease per decade was 1.90 μm. As age dependency was different in different segments, age-correction of RNFL values was made for all segments separately. Age-adjusted RNFL thickness showed a significant correlation with axial length (r = -0.391, P = 0.001) and with refractive error (r = 0.396, P<0.001), but not with disc size (r = 0.124). Normal RNFL results with SOCT are comparable to those reported with time-domain OCT. In accordance with the literature on other devices, RNFL thickness measured with SOCT was significantly correlated with age and axial length. For creating a normative database of SOCT RNFL values have to be age adjusted.

Relationship between reaction layer thickness and leach rate for nuclear waste glasses

International Nuclear Information System (INIS)

Chick, L.A.; Pederson, L.R.

1984-02-01

Three leaching tests, devised to distinguish among several proposed nuclear waste glass leaching mechanisms, were carried out for four different waste glasses. In the first test, the influence of a pre-formed reaction layer on elemental release was evaluated. In the second test, glass specimens were replaced with fresh samples halfway through the leaching experiment, to evaluate the influence of the concentration of glass components in leaching. Finally, regular replacement of the leachant at fixed time intervals essentially removed the variable changing solution concentration, and allowed an assessment of the influence of reaction layer thickness on the leaching rate. Results for all glasses tested indicated that the reaction layer presented little or no barrier to leaching, and that most of the retardation on leaching rates generally observed are attributable to saturation effects. 20 references, 6 figures, 1 table

Thickness of the Macula, Retinal Nerve Fiber Layer, and Ganglion Cell Layer in the Epiretinal Membrane: The Repeatability Study of Optical Coherence Tomography.

Science.gov (United States)

Lee, Haeng-Jin; Kim, Min-Su; Jo, Young-Joon; Kim, Jung-Yeul

2015-07-01

To analyze the repeatability of measurements of the thicknesses of the macula, retinal nerve fiber layer (RNFL), and ganglion cell inner plexiform layer (GCIPL) using spectral-domain optical coherence tomography (SD-OCT) in the epiretinal membrane (ERM). The prospective study analyzed patients who visited our retinal clinic from June 2013 to January 2014. An experienced examiner measured the thicknesses twice using macular cube 512 × 128 and optic disc cube 200 × 200 scans. The repeatability of the thicknesses of the macula, RNFL, and GCIPL were compared using the intraclass correlation coefficient (ICC) of two groups based on the central macular thickness (group A, ≤ 450 μm; group B, > 450 μm). A total of 88 patients were analyzed. The average thicknesses of the central macula, RNFL, and GCIPL were 256.5, 96.6, and 84.4 μm, respectively, in the normal fellow eye and 412.3, 94.6, and 56.7 μm in the affected eye. The ICCs of the central macula, RNFL, and GCIPL were 0.995, 0.994, and 0.996, respectively, for the normal fellow eye and 0.991, 0.973, and 0.881 for the affected eye. The average thicknesses of the central macula, RNFL, and GCIPL in group A were 360.9, 93.5, and 63.4 μm, respectively, and the ICCs were 0.997, 0.987, and 0.995. The thicknesses in group B were 489.5, 96.2, and 46.6 μm, respectively, and the ICCs were 0.910, 0.942, and 0.603, significantly lower repeatability compared with group A (P macula.

Measurements of the Stiffness and Thickness of the Pavement Asphalt Layer Using the Enhanced Resonance Search Method

Directory of Open Access Journals (Sweden)

Nur Mustakiza Zakaria

2014-01-01

Full Text Available Enhanced resonance search (ERS is a nondestructive testing method that has been created to evaluate the quality of a pavement by means of a special instrument called the pavement integrity scanner (PiScanner. This technique can be used to assess the thickness of the road pavement structure and the profile of shear wave velocity by using the principle of surface wave and body wave propagation. In this study, the ERS technique was used to determine the actual thickness of the asphaltic pavement surface layer, while the shear wave velocities obtained were used to determine its dynamic elastic modulus. A total of fifteen locations were identified and the results were then compared with the specifications of the Malaysian PWD, MDD UKM, and IKRAM. It was found that the value of the elastic modulus of materials is between 3929 MPa and 17726 MPa. A comparison of the average thickness of the samples with the design thickness of MDD UKM showed a difference of 20 to 60%. Thickness of the asphalt surface layer followed the specifications of Malaysian PWD and MDD UKM, while some of the values of stiffness obtained are higher than the standard.

Intermixing at the heterointerface between ZnS /Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Science.gov (United States)

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; Sáez-Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H.-W.; Fischer, Ch.-H.; Lux-Steiner, M. C.; Jung, Ch.

2006-09-01

The application of Zn compounds as buffer layers was recently extended to wide-gap CuInS2 (CIS) based thin-film solar cells. Using an alternative chemical deposition route for the buffer preparation aiming at the deposition of a single-layer, nominal ZnS buffer without the need for any toxic reactants such as hydrazine has helped us to achieve a similar efficiency as respective CdS-buffered reference devices. After identifying the deposited Zn compound, as ZnS /Zn(S,O) bilayer buffer in former investigations [M. Bär et al., J. Appl. Phys. 99, 123503 (2006)], this time the focus lies on potential diffusion/intermixing processes at the buffer/absorber interface possibly, clarifying the effect of the heat treatment, which drastically enhances the device performance of respective final solar cells. The interface formation was investigated by x-ray photoelectron and x-ray excited Auger electron spectroscopy. In addition, photoelectron spectroscopy (PES) measurements were also conducted using tunable monochromatized synchrotron radiation in order to gain depth-resolved information. The buffer side of the buffer/absorber heterointerface was investigated by means of the characterization of Zn(S ,O)/ZnS/CIS structures where the ZnS /Zn(S,O) bilayer buffer was deposited successively by different deposition times. In order to make the (in terms of PES information depth) deeply buried absorber side of the buffer/absorber heterointerface accessible for characterization, in these cases the buffer layer was etched away by dilute HClaq. We found indications that while (out-leached) Cu from the absorber layer forms together with the educts in the chemical bath a [Zn(1-Z ),Cu2Z]S-like interlayer between buffer and absorber, Zn is incorporated in the uppermost region of the absorber. Both effects are strongly enhanced by postannealing the Zn(S ,O)/ZnS/CIS samples. However, it was determined that the major fraction of the Cu and Zn can be found quite close to the heterointerface in

The Imaging and Evolution of Seismic Layer 2A Thickness from a 0-70 Ma Oceanic Crustal Transect in the South Atlantic

Science.gov (United States)

Estep, J. D.; Reece, R.; Kardell, D. A.; Christeson, G. L.; Carlson, R. L.

2017-12-01

Seismic layer 2A, the uppermost igneous portion of oceanic crust, is commonly used to refer to the seismic velocities of upper crust that are bounded below by a steep vertical velocity gradient. Layer 2A velocities are known to increase with crustal age, from 2.5 km/s in crust 15 Ma. Thickness of layer 2A has been shown to increase by a factor of 2 within 1 Ma at fast spreading ridges and then remain relatively constant, while layer 2A maintains a fairly consistent thickness, irrespective of age, at slow-intermediate spreading ridges. Layer 2A thickness and velocity evolution studies to date have been largely focused on young oceanic crust very proximal to a spreading center with little investigation of changes (or lack thereof) that occur at crustal ages >10 Ma. We utilize a multichannel seismic dataset collected at 30° S in the western South Atlantic that continuously images 0 - 70 Ma oceanic crust along a single flowline generated at the slow-intermediate spreading Mid-Atlantic Ridge. We follow the methods of previous studies by processing the data to image the layer 2A event, which is then used for calculating thickness. 1D travel time forward modeling at regularly spaced age intervals across the transect provides for the conversion of time to depth thickness, and for determining the evolution of velocities with age. Our results show layer 2A in 20 Ma crust is roughly double the thickness of that in crust 0-5 Ma (830 vs. 440 m), but thickness does not appear to change beyond 20 Ma. The layer 2A event is readily observable in crust 0-50 Ma, is nearly completely absent in crust 50-65 Ma, and then reappears with anomalously high amplitude and lateral continuity in crust 65-70 Ma. Our results suggest that layer 2A thickens with age at the slow-intermediate spreading southern Mid-Atlantic Ridge, and that layer 2A either continues to evolve at the older crustal ages, well beyond the expected 10-15 Ma "mature age", or that external factors have altered the crust at

The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

Energy Technology Data Exchange (ETDEWEB)

Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); Nozaki, Takayuki; Zayets, Vadym; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Suzuki, Yoshishige [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

2016-08-28

The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes in the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.

TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness

NARCIS (Netherlands)

Van Hao, B.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.

2012-01-01

This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth

LONGITUDINAL CHANGES IN THICKNESSES OF THE MACULA, GANGLION CELL-INNER PLEXIFORM LAYER, AND RETINAL NERVE FIBER LAYER AFTER VITRECTOMY: A 12-Month Observational Study.

Science.gov (United States)

Lim, Hyung-Bin; Lee, Min-Woo; Kwak, Baek-Soo; Jo, Young-Joon; Kim, Jung-Yeul

2018-01-01

To analyze longitudinal changes in the thicknesses of the macula, ganglion cell-inner plexiform layer (GC-IPL), and peripapillary retinal nerve fiber layer (RNFL) after vitrectomy. Thirty-eight patients diagnosed with intraocular lens (IOL) dislocation without evidence of other vitreoretinal diseases were included. They underwent conventional vitrectomy and IOL transscleral fixation, with a follow-up of 12 months. Using spectral domain optical coherence tomography, the thicknesses of the macula, GC-IPL, and peripapillary RNFL in the vitrectomized and fellow control eyes were measured. Various optic nerve head parameters were also determined. Optical coherence tomography showed that there were no significant differences in postoperative central macular thickness compared with baseline values. The average GC-IPL thickness increased 1 month after surgery from baseline (P = 0.038). The average RNFL thickness increased from baseline at 1 month (P = 0.001) and 3 months (P = 0.011) after vitrectomy. The mean foveal, GC-IPL, and RNFL thicknesses of the study eyes compared with the fellow control eyes increased at 1 month (P = 0.034), 1 month (P = 0.048), and 1 month (P = 0.013) to 3 months (P = 0.038), respectively, after surgery. However, no significant differences were found in intraocular pressure or optic nerve head parameters between the study and fellow control eyes at 12 months after surgery. Transient increases in the thickness of the macula and GC-IPL were observed at 1 month after vitrectomy, and the postoperative RNFL thickness increased until 3 months after surgery, after which it returned to preoperative levels. There was no significant change in intraocular pressure or optic nerve head parameters before and after surgery.

Simultaneous sound velocity and thickness measurement by the ultrasonic pitch-catch method for corrosion-layer-forming polymeric materials.

Science.gov (United States)

Kusano, Masahiro; Takizawa, Shota; Sakai, Tetsuya; Arao, Yoshihiko; Kubouchi, Masatoshi

2018-01-01

Since thermosetting resins have excellent resistance to chemicals, fiber reinforced plastics composed of such resins and reinforcement fibers are widely used as construction materials for equipment in chemical plants. Such equipment is usually used for several decades under severe corrosive conditions so that failure due to degradation may result. One of the degradation behaviors in thermosetting resins under chemical solutions is "corrosion-layer-forming" degradation. In this type of degradation, surface resins in contact with a solution corrode, and some of them remain asa corrosion layer on the pristine part. It is difficult to precisely measure the thickness of the pristine part of such degradation type materials by conventional pulse-echo ultrasonic testing, because the sound velocity depends on the degree of corrosion of the polymeric material. In addition, the ultrasonic reflection interface between the pristine part and the corrosion layer is obscure. Thus, we propose a pitch-catch method using a pair of normal and angle probes to measure four parameters: the thicknesses of the pristine part and the corrosion layer, and their respective sound velocities. The validity of the proposed method was confirmed by measuring a two-layer sample and a sample including corroded parts. The results demonstrate that the pitch-catch method can successfully measure the four parameters and evaluate the residual thickness of the pristine part in the corrosion-layer-forming sample. Copyright © 2017 Elsevier B.V. All rights reserved.

Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes

KAUST Repository

Wu, Di

2015-11-17

© 2015 American Chemical Society. The dielectric constant or relative permittivity (εr) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured εr increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001).

Science.gov (United States)

Bergamaschini, R; Brehm, M; Grydlik, M; Fromherz, T; Bauer, G; Montalenti, F

2011-07-15

The evolution of the wetting layer (WL) thickness during Ge deposition on Si(001) is analyzed with the help of a rate-equation approach. The combined role of thickness, island volume and shape-dependent chemical potentials is considered. Several experimental observations, such as WL thinning following the pyramid-to-dome transformation, are captured by the model, as directly demonstrated by a close comparison with photoluminescence measurements (PL) on samples grown at three different temperatures. The limitations of the model in describing late stages of growth are critically addressed.

Characterization of boundary layer thickness of nano fluid ZrO_2 on natural convection process

International Nuclear Information System (INIS)

V-Indriati Sri Wardhani; Henky P Rahardjo

2015-01-01

Cooling system is highly influenced by the process of convection heat transfer from the heat source to the cooling fluid. The cooling fluid usually used conventional fluid such as water. Cooling system performance can be improved by using fluids other than water such as nano fluid that is made from a mixture of water and nano-sized particles. Researchers at BATAN Bandung have made nano fluid ZrO_2 from local materials, as well as experimental equipment for studying the thermohydraulic characteristics of nano fluid as the cooling fluid. In this study, thermohydraulic characteristics of nano fluid ZrO_2 are observed through experimentation. Nano fluid ZrO_2 is made from a mixture of water with ZrO_2 nano-sized particles of 10-7-10-9 nm whose concentration is 1 g/liter. This nano fluid is used as coolant in the cooling process of natural convection. The natural convection process depends on the temperature difference between heat source and the cooling fluid, which occur in the thermal boundary layer. Therefore it is necessary to study the thermal boundary layer thickness of nano fluid ZrO_2, which is also able to determine the local velocity. Experimentations are done with several variation of the heater power and then the temperature are measured at several horizontal points to see the distribution of the temperatures. The temperature distribution measurement results can be used to determine the boundary layer thickness and flow rate. It is obtained that thermal boundary layer thickness and velocity of nano fluid ZrO_2 is not much different from the conventional fluid water. (author)

Macular retinal ganglion cell-inner plexiform layer thickness in patients on hydroxychloroquine therapy.

Science.gov (United States)

Lee, Min Gyu; Kim, Sang Jin; Ham, Don-Il; Kang, Se Woong; Kee, Changwon; Lee, Jaejoon; Cha, Hoon-Suk; Koh, Eun-Mi

2014-11-25

We evaluated macular ganglion cell-inner plexiform layer (GC-IPL) thickness using spectral-domain optical coherence tomography (SD-OCT) in patients with chronic exposure to hydroxychloroquine (HCQ). This study included 130 subjects, who were divided into three groups: Group 1A, 55 patients with HCQ use ≥5 years; Group 1B, 46 patients with HCQ use 1000 g), significant correlations were not observed. This study revealed that macular GC-IPL thickness did not show definite correlations with HCQ use. However, some patients, especially with HCQ retinopathy or high cumulative doses, showed thin GC-IPL. Copyright 2015 The Association for Research in Vision and Ophthalmology, Inc.

Optimization of electrode geometry and piezoelectric layer thickness of a deformable mirror

Directory of Open Access Journals (Sweden)

Nováková Kateřina

2013-05-01

Full Text Available Deformable mirrors are the most commonly used wavefront correctors in adaptive optics systems. Nowadays, many applications of adaptive optics to astronomical telescopes, high power laser systems, and similar fast response optical devices require large diameter deformable mirrors with a fast response time and high actuator stroke. In order to satisfy such requirements, deformable mirrors based on piezoelectric layer composite structures have become a subject of intense scientific research during last two decades. In this paper, we present an optimization of several geometric parameters of a deformable mirror that consists of a nickel reflective layer deposited on top of a thin lead zirconate titanate (PZT piezoelectric disk. Honeycomb structure of gold electrodes is deposited on the bottom of the PZT layer. The analysis of the optimal thickness ratio between the PZT and nickel layers is performed to get the maximum actuator stroke using the finite element method. The effect of inter-electrode distance on the actuator stroke and influence function is investigated. Applicability and manufacturing issues are discussed.

Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

Science.gov (United States)

Zubiaga, A.; García, J. A.; Plazaola, F.; Tuomisto, F.; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.

2007-05-01

We present a method, based on positron annihilation spectroscopy, to obtain information on the defect depth profile of layers grown over high-quality substrates. We have applied the method to the case of ZnO layers grown on sapphire, but the method can be very easily generalized to other heterostructures (homostructures) where the positron mean diffusion length is small enough. Applying the method to the ratio of W and S parameters obtained from Doppler broadening measurements, W/S plots, it is possible to determine the thickness of the layer and the defect profile in the layer, when mainly one defect trapping positron is contributing to positron trapping at the measurement temperature. Indeed, the quality of such characterization is very important for potential technological applications of the layer.

Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO3-Bi0.95Gd0.05FeO3 multilayers

Science.gov (United States)

Hohenberger, S.; Lazenka, V.; Temst, K.; Selle, S.; Patzig, C.; Höche, T.; Grundmann, M.; Lorenz, M.

2018-05-01

The effect of double-layer thickness and partial substitution of Bi3+ by Gd3+ is demonstrated for multiferroic BaTiO3–BiFeO3 2–2 heterostructures. Multilayers of 15 double layers of BaTiO3 and Bi0.95Gd0.05FeO3 were deposited onto (0 0 1) oriented SrTiO3 substrates by pulsed laser deposition with various double layer thicknesses. X-ray diffraction and high resolution transmission electron microscopy investigations revealed a systematic strain tuning with layer thickness via coherently strained interfaces. The multilayers show increasingly enhanced magnetoelectric coupling with reduced double layer thickness. The maximum magnetoelectric coupling coefficient was measured to be as high as 50.8 V cm‑1 Oe‑1 in 0 T DC bias magnetic field at room temperature, and 54.9 V cm‑1 Oe‑1 above 3 T for the sample with the thinnest double layer thickness of 22.5 nm. This enhancement is accompanied by progressively increasing perpendicular magnetic anisotropy and compressive out-of-plane strain. To understand the origin of the enhanced magnetoelectric coupling in such multilayers, the temperature and magnetic field dependency of is discussed. The magnetoelectric performance of the Gd3+ substituted samples is found to be slightly enhanced when compared to unsubstituted BaTiO3–BiFeO3 multilayers of comparable double-layer thickness.

Influence of Filler Alloy Composition and Process Parameters on the Intermetallic Layer Thickness in Single-Sided Cold Metal Transfer Welding of Aluminum-Steel Blanks

Science.gov (United States)

Silvayeh, Zahra; Vallant, Rudolf; Sommitsch, Christof; Götzinger, Bruno; Karner, Werner; Hartmann, Matthias

2017-11-01

Hybrid components made of aluminum alloys and high-strength steels are typically used in automotive lightweight applications. Dissimilar joining of these materials is quite challenging; however, it is mandatory in order to produce multimaterial car body structures. Since especially welding of tailored blanks is of utmost interest, single-sided Cold Metal Transfer butt welding of thin sheets of aluminum alloy EN AW 6014 T4 and galvanized dual-phase steel HCT 450 X + ZE 75/75 was experimentally investigated in this study. The influence of different filler alloy compositions and welding process parameters on the thickness of the intermetallic layer, which forms between the weld seam and the steel sheet, was studied. The microstructures of the weld seam and of the intermetallic layer were characterized using conventional optical light microscopy and scanning electron microscopy. The results reveal that increasing the heat input and decreasing the cooling intensity tend to increase the layer thickness. The silicon content of the filler alloy has the strongest influence on the thickness of the intermetallic layer, whereas the magnesium and scandium contents of the filler alloy influence the cracking tendency. The layer thickness is not uniform and shows spatial variations along the bonding interface. The thinnest intermetallic layer (mean thickness < 4 µm) is obtained using the silicon-rich filler Al-3Si-1Mn, but the layer is more than twice as thick when different low-silicon fillers are used.

Changes in retinal nerve fiber layer thickness after spinal surgery in the prone position: a prospective study

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Baran Gencer

2015-02-01

Full Text Available BACKGROUND AND OBJECTIVES: Changes in ocular perfusion play an important role in the pathogenesis of ischemic optic neuropathy. Ocular perfusion pressure is equal to mean arterial pressure minus intraocular pressure. The aim of this study was to evaluate the changes in the intraocular pressure and the retinal nerve fiber layer thickness in patients undergoing spinal surgery in the prone position. METHODS: This prospective study included 30 patients undergoing spinal surgery. Retinal nerve fiber layer thickness were measured one day before and after the surgery by using optical coherence tomography. Intraocular pressure was measured by tonopen six times at different position and time-duration: supine position (baseline; 10 min after intubation (Supine 1; 10 (Prone 1, 60 (Prone 2, 120 (Prone 3 min after prone position; and just after postoperative supine position (Supine 2. RESULTS: Our study involved 10 male and 20 female patients with the median age of 57 years. When postoperative retinal nerve fiber layer thickness measurements were compared with preoperative values, a statistically significant thinning was observed in inferior and nasal quadrants (p = 0.009 and p = 0.003, respectively. We observed a statistically significant intraocular pressure decrease in Supine 1 and an increase in both Prone 2 and Prone 3 when compared to the baseline. Mean arterial pressure and ocular perfusion pressure were found to be significantly lower in Prone 1, Prone 2 and Prone 3, when compared with the baseline. CONCLUSIONS: Our study has shown increase in intraocular pressure during spinal surgery in prone position. A statistically significant retinal nerve fiber layer thickness thinning was seen in inferior and nasal quadrants one day after the spinal surgery.

Non-destructive lateral mapping of the thickness of the photoactive layer in polymer-based solar cells

DEFF Research Database (Denmark)

Sylvester-Hvid, Kristian O.; Tromholt, Thomas; Jørgensen, Mikkel

2013-01-01

Non-destructive lateral mapping of the thickness of the photoactive layer in poly(3-hexyl-thiophene) : 1-(3-methoxy-carbonyl)propyl-1-phenyl-(6,6)C61 (P3HT : PCBM) solar cells is demonstrated. The method employs a spatially resolved (XY) recording of ultraviolet-visible spectra in reflection...... geometry at normal incidence, using a dense raster defined by a circular probe spot of 800-µm diameter. The evaluation of the thickness of the photoactive layer at each raster point employs an algorithm-driven comparison of the measured absorption spectrum with spectral features, as compiled from......-coated float glass substrates. After this, two application examples for solar cells processed either by spin coating or slot die coating of the P3HT : PCBM layer follow. The spin-coated solar cells have glass as the substrate with the P3HT : PCBM spun at different spinning speeds. The slot die-coated solar...

Macular and peripapillary retinal nerve fiber layer thickness in children with hyperopic anisometropic amblyopia

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Shuang-Qing Wu

2013-02-01

Full Text Available AIM:To compare the retinal nerve fiber layer (RNFL thickness and macular thickness in the amblyopic eye with that in the sound eye of children with hyperopic anisometropic amblyopia using optical coherence tomography (OCT.METHODS: A prospective, nonrandom, intraindividual comparative cohort study includes 72 children with hyperopic anisometropic amblyopia in a single center. Macular thickness, macular foveola thickness, and peripapillary RNFL thickness were compared between the amblyopia eyes and the contralateral sound eyes.RESULTS:There were 38 male and 34 female patients, with a mean age as 9.7±1.9 years (range, 5–16 years. Hyperopic was +3.62±1.16D (range +2.00D to +6.50D in the amblyopic eyes, which was significantly higher in the control eyes with +0.76±0.90D (range 0D to +2.00D (P P = 0.02. The mean macular foveola thickness was significantly thicker in the amblyopic eyes than the contralateral sound eyes (181.4±14.2µm vs 175.2±13.3µm, P CONCLUSION:Eyes with hyperopic anisometropic amblyopia are found thicker macular foveola and peripapillary RNFL than the contralateral eyes in children.

Investigation of radiative effects of the optically thick dust layer over the Indian tropical region

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S. K. Das

2013-04-01

Full Text Available Optical and physical properties of aerosols derived from multi-satellite observations (MODIS-Aqua, OMI-Aura, MISR-Terra, CALIOP-CALIPSO have been used to estimate radiative effects of the dust layer over southern India. The vertical distribution of aerosol radiative forcing and heating rates are calculated with 100 m resolution in the lower atmosphere, using temperature and relative humidity data from balloon-borne radiosonde observations. The present study investigates the optically thick dust layer of optical thickness 0.18 ± 0.06 at an altitude of 2.5 ± 0.7 km over Gadanki, transported from the Thar Desert, producing radiative forcing and heating rate of 11.5 ± 3.3 W m−2 and 0.6 ± 0.26 K day−1, respectively, with a forcing efficiency of 43 W m−2 and an effective heating rate of 4 K day−1 per unit dust optical depth. Presence of the dust layer increases radiative forcing by 60% and heating rate by 60 times at that altitude compared to non-dusty cloud-free days. Calculation shows that the radiative effects of the dust layer strongly depend on the boundary layer aerosol type and mass loading. An increase of 25% of heating by the dust layer is found over relatively cleaner regions than urban regions in southern India and further 15% of heating increases over the marine region. Such heating differences in free troposphere may have significant consequences in the atmospheric circulation and hydrological cycle over the tropical Indian region.

Effect of separated layer thickness on magnetoresistance and magnetic properties of Co/Dy/Co and Ni/Dy/Ni film systems

Science.gov (United States)

Shabelnyk, T. M.; Shutylieva, O. V.; Vorobiov, S. I.; Pazukha, I. M.; Chornous, A. M.

2018-01-01

Co(5 nm)/Dy(tDy)/Co(20 nm)/S and Ni(5 nm)/Dy(tDy)/Ni(20 nm)/S trilayer films are prepared by electron-beam sputtering to investigate the influence of dysprosium layer thickness (tDy) and thermal annealing on the crystal structure, magnetoresistance (MR) and magnetic properties of thin films. The thickness of Dy layer changed in the range from 1 nm to 20 nm. The samples annealed for 20 min at 700 K. Electron diffraction patterns reveal that the as-deposited and annealed systems Co/Dy/Co and Ni/Dy/Ni had fcc-Co + hcp-Dy and fcc-Ni + hcp-Dy phase state, respectively. It is also shown that at the tDy = 15 nm the transition from amorphous to crystalline structures of Dy layer is observed. An increase in the Dy layer thickness results in changes in the MR and magnetic properties of the trilayer systems. It is shown that MR is most thermally stable against annealing to 700 K at tDy = 15 nm for Co/Dy/Co as well as for Ni/Dy/Ni. For tDy = 15 nm the, value of MR for both system increases by two times compared to those of pure ferromagnetic (FM) samples. The coercivity (Bc), remanent (Mr) and saturation (Ms) magnetization of the in-plain magnetization hysteresis loops are related to the Dy layer thickness too. The coercivity depends on the FM materials type and diffusion processes at the layer boundary. Accordingly, Mr and Ms are reduced with tDy increasing before and after annealing for both trilayer systems.

Effect of layer thickness and printing orientation on mechanical properties and dimensional accuracy of 3D printed porous samples for bone tissue engineering.

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Arghavan Farzadi

Full Text Available Powder-based inkjet 3D printing method is one of the most attractive solid free form techniques. It involves a sequential layering process through which 3D porous scaffolds can be directly produced from computer-generated models. 3D printed products' quality are controlled by the optimal build parameters. In this study, Calcium Sulfate based powders were used for porous scaffolds fabrication. The printed scaffolds of 0.8 mm pore size, with different layer thickness and printing orientation, were subjected to the depowdering step. The effects of four layer thicknesses and printing orientations, (parallel to X, Y and Z, on the physical and mechanical properties of printed scaffolds were investigated. It was observed that the compressive strength, toughness and Young's modulus of samples with 0.1125 and 0.125 mm layer thickness were more than others. Furthermore, the results of SEM and μCT analyses showed that samples with 0.1125 mm layer thickness printed in X direction have more dimensional accuracy and significantly close to CAD software based designs with predefined pore size, porosity and pore interconnectivity.

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

Science.gov (United States)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Influence of the thickness of electrochemically deposited polyaniline used as hole transporting layer on the behaviour of polymer light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Alonso, J.L. [Dpto. de Fisica y Arquitectura de Computadores, Universidad Miguel Hernandez, Av. de la Universidad s/n, Ed. Torrepinet, 03202, Elche, Alicante (Spain)], E-mail: j.l.alonso@umh.es; Ferrer, J.C. [Dpto. de Fisica y Arquitectura de Computadores, Universidad Miguel Hernandez, Av. de la Universidad s/n, Ed. Torrepinet, 03202, Elche, Alicante (Spain); Cotarelo, M.A.; Montilla, F. [Dpto. de Quimica Fisica e Instituto Universitario de Materiales de Alicante, Apdo. de Correos 99, E-03080, Alicante (Spain); Fernandez de Avila, S. [Dpto. de Fisica y Arquitectura de Computadores, Universidad Miguel Hernandez, Av. de la Universidad s/n, Ed. Torrepinet, 03202, Elche, Alicante (Spain)

2009-02-27

An experimental study about the influence of the thickness of electrochemically deposited polyaniline (PANI), used as hole-transporting layer, on the behaviour of polymer light emitting diodes is presented. Two sets of devices with a different conjugated polymer used as active layer were prepared. Poly(9-vinylcarbazole) was used for the first type of devices, whereas Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene] was used for the second type. Each set consists of five polymeric diodes in which the hole-transporting layer has been varied. In one case of each set no layer was deposited, in other one a Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) layer was deposited, and in the rest of the diodes a different thickness of electrochemically deposited PANI was employed. The optic and electronic characterization of the devices show that controlling the thickness of the PANI hole transporting layer, both the maximum emission peak of the electroluminescence curves and the driving voltage could be tuned. Furthermore, an exponential behaviour has been demonstrated for the maximum intensity of the electroluminescence curves as a function of the applied excitation voltage between anode and cathode.

Influence of the thickness of electrochemically deposited polyaniline used as hole transporting layer on the behaviour of polymer light-emitting diodes

International Nuclear Information System (INIS)

Alonso, J.L.; Ferrer, J.C.; Cotarelo, M.A.; Montilla, F.; Fernandez de Avila, S.

2009-01-01

An experimental study about the influence of the thickness of electrochemically deposited polyaniline (PANI), used as hole-transporting layer, on the behaviour of polymer light emitting diodes is presented. Two sets of devices with a different conjugated polymer used as active layer were prepared. Poly(9-vinylcarbazole) was used for the first type of devices, whereas Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene] was used for the second type. Each set consists of five polymeric diodes in which the hole-transporting layer has been varied. In one case of each set no layer was deposited, in other one a Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) layer was deposited, and in the rest of the diodes a different thickness of electrochemically deposited PANI was employed. The optic and electronic characterization of the devices show that controlling the thickness of the PANI hole transporting layer, both the maximum emission peak of the electroluminescence curves and the driving voltage could be tuned. Furthermore, an exponential behaviour has been demonstrated for the maximum intensity of the electroluminescence curves as a function of the applied excitation voltage between anode and cathode

Evaluation of retinal nerve fiber layer thickness and choroidal thickness in pseudoexfoliative glaucoma and pseudoexfoliative syndrome.

Science.gov (United States)

Ozge, Gokhan; Koylu, Mehmet Talay; Mumcuoglu, Tarkan; Gundogan, Fatih Cakir; Ozgonul, Cem; Ayyildiz, Onder; Kucukevcilioglu, Murat

2016-05-01

To compare retinal nerve fiber layer thickness (RNFLT) and choroidal thickness (ChT) measurements in eyes with pseudoexfoliative (PEX) glaucoma, PEX syndrome and healthy control eyes. Eighteen patients with PEX glaucoma in one eye and PEX syndrome in the fellow eye were included. The right eyes of thirty-nine age- and sex-matched healthy subjects were included as control group. All participants underwent a detailed biomicroscopic and funduscopic examination. RNFLT and ChT measurements were performed with a commercially available spectral-domain optical coherence tomography (SD-OCT). ChT measurements were performed by using enhanced depth imaging (EDI) mode. Patients with PEX underwent diurnal IOP measurements with 4-hour intervals before inclusion in the study. RNFLT results included the average measurement and 6 quadrants (temporal, inferotemporal, inferonasal, nasal, superonasal and supero-temporal). ChT measurements were performed in the subfoveal region and around the fovea (500µm and 1500 µm nasal and temporal to the fovea), as well as around the optic disc (average peripapillary and eight quadrants in the peripapillary region (temporal, inferotemporal, inferior, inferonasal, nasal, superonasal, superior, supero-temporal)). RNFLT in all quadrants and average thickness were significantly lower in PEX glaucoma eyes compared to PEX syndrome eyes and healthy control eyes (p0.05) except the inferotemporal quadrant. ChT measurements were similar between groups (p>0.05). Thinning of the RNFL in association with unchanged ChT may mean that the presence of PEX material is a much more significant risk factor than choroidal changes in the progression of PEX syndrome to PEX glaucoma.

Study of first electronic transition and hydrogen bonding state of ultra-thin water layer of nanometer thickness on an α-alumina surface by far-ultraviolet spectroscopy

Science.gov (United States)

Goto, Takeyoshi; Kinugasa, Tomoya

2018-05-01

The first electronic transition (A˜ ← X˜) and the hydrogen bonding state of an ultra-thin water layer of nanometer thickness between two α-alumina surfaces (0.5-20 nm) were studied using far-ultraviolet (FUV) spectroscopy in the wavelength range 140-180 nm. The ultra-thin water layer of nanometer thickness was prepared by squeezing a water droplet ( 1 μL) between a highly polished α-alumina prism and an α-alumina plate using a high pressure clamp ( 4.7 MPa), and the FUV spectra of the water layer at different thicknesses were measured using the attenuated total reflection method. As the water layer became thinner, the A˜ ← X˜ bands were gradually shifted to higher or lower energy relative to that of bulk water; at thicknesses smaller than 4 nm, these shifts were substantial (0.1-0.2 eV) in either case. The FUV spectra of the water layer with thickness lost at thicknesses below 4 nm, because of steric hydration forces between the α-alumina surfaces.

Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of Auger electron spectroscopy depth profiling

International Nuclear Information System (INIS)

Kotis, L.; Gurban, S.; Pecz, B.; Menyhard, M.; Yakimova, R.

2014-01-01

Highlights: • The thickness of graphene grown on SiC was determined by AES depth profiling. • The AES depth profiling verified the presence of buffer layer on SiC. • The presence of unsaturated Si bonds in the buffer layer has been shown. • Using multipoint analysis thickness distribution of the graphene on the wafer was determined. - Abstract: Auger electron spectroscopy (AES) depth profiling was applied for determination of the thickness of a macroscopic size graphene sheet grown on 2 in. 6H-SiC (0 0 0 1) by sublimation epitaxy. The measured depth profile deviated from the expected exponential form showing the presence of an additional, buffer layer. The measured depth profile was compared to the simulated one which allowed the derivation of the thicknesses of the graphene and buffer layers and the Si concentration of buffer layer. It has been shown that the graphene-like buffer layer contains about 30% unsaturated Si. The depth profiling was carried out in several points (diameter 50 μm), which permitted the constructing of a thickness distribution characterizing the uniformity of the graphene sheet

Effects of composition and layer thickness of a butyl acrylate/acrylic acid copolymer on the adhesion properties

Energy Technology Data Exchange (ETDEWEB)

Ghim, Deoukchen; Kim, Jung Hyeun [University of Seoul, Seoul (Korea, Republic of)

2016-02-15

Acrylic pressure-sensitive adhesives are synthesized by solution copolymerization using n-butyl acrylate and acrylic acid (AA) in ethyl acetate anhydrous. The copolymer composition is controlled for good adhesive properties by varying AA content. The monomer conversion is measured by the gravimetric method and FTIR technique. The adhesive layer thickness is measured by scanning electron microscopy, and the adhesive properties are evaluated with loop tack, 180 .deg. peel, and holding time measurements. The peel force increases with increasing the AA content up to 3 wt% and decreases at the AA content higher than 3 wt%, but the tack force decreases with increasing the AA content. The holding time increases with increasing the AA content, and it shows a similar trend with the T{sub g} of adhesives. The increase of layer thickness improves tack and peel forces, but it weakens the holding power. A tape thickness of about 20 μm shows well-balanced properties at 3 wt% AA content in the acrylic copolymer system.

Design and fabrication of optical thin film layers with variable thickness profile for producing variable reflectivity mirrors

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Hamid R fallah

2006-12-01

Full Text Available   The design method and fabrication of mirrors with variable reflectivity are presented. To fabricate such a mirror a fixed mask with a circular aperture is used. The circular aperture is considered as an extended source with cosx(θas its diffusion distribution function and is the parameter for the distribution function of the particles through the aperture. The thickness profile of deposited layer is a function of this distribution. In this work, the coating system is calibrated for the materials which are used and then the parameter of the diffusion distribution function of the particles through the circular aperture is defined by experiments. Using these results, a graph is presented which connects the parameter of the circular aperture to the parameters of the thickness profile. It is then possible to deposit any type of variable reflectivity mirror using this graph. Finally, the effect of the uncertainty in measuring layer thicknesses on the phase of reflected wave and transmitted wave is investigated.

Effects of composition and layer thickness of a butyl acrylate/acrylic acid copolymer on the adhesion properties

International Nuclear Information System (INIS)

Ghim, Deoukchen; Kim, Jung Hyeun

2016-01-01

Acrylic pressure-sensitive adhesives are synthesized by solution copolymerization using n-butyl acrylate and acrylic acid (AA) in ethyl acetate anhydrous. The copolymer composition is controlled for good adhesive properties by varying AA content. The monomer conversion is measured by the gravimetric method and FTIR technique. The adhesive layer thickness is measured by scanning electron microscopy, and the adhesive properties are evaluated with loop tack, 180 .deg. peel, and holding time measurements. The peel force increases with increasing the AA content up to 3 wt% and decreases at the AA content higher than 3 wt%, but the tack force decreases with increasing the AA content. The holding time increases with increasing the AA content, and it shows a similar trend with the T g of adhesives. The increase of layer thickness improves tack and peel forces, but it weakens the holding power. A tape thickness of about 20 μm shows well-balanced properties at 3 wt% AA content in the acrylic copolymer system.

Retina nerve fiber layer and choroidal thickness changes in obstructive sleep apnea syndrome.

Science.gov (United States)

Ozge, Gokhan; Dogan, Deniz; Koylu, Mehmet Talay; Ayyildiz, Onder; Akincioglu, Dorukcan; Mumcuoglu, Tarkan; Mutlu, Fatih Mehmet

2016-01-01

The purpose of this study was to determine the effects of obstructive sleep apnea syndrome (OSAS) on the submacular and peripapillary retinal nerve fiber layer (RNFL) and choroidal thickness (ChT). Eighty-four eyes of 42 male patients with OSAS and 112 eyes of 56 aged-matched and body mass index-matched healthy male subjects were enrolled in this case-control study. The ChT and peripapillary RNFL thickness was measured using enhanced depth imaging optical coherence tomography. The ChT and RNFL thickness measurements of the groups were compared, and correlations among the Apnea Hypopnea Index (AHI) values and these measurements were calculated. Right and left eyes were separately evaluated. There were no significant differences in the subfoveal and temporal ChT between the groups (p > 0.05). The OSAS group had significantly thicker ChT at 0.5 and 1.5 mm nasal to the fovea in both eyes than the control group (p 0.05). Between AHI and mean RNFL thickness showed a median negative correlation (r = - 0.411, p = 0.001). The choroidal thickening in patients with OSAS may be associated with the pathophysiology of the neurodegeneration process of the disease.

Synthesis of the Thickness Profile of the Waveguide Layer of the Thin Film Generalized Waveguide Luneburg Lens

Directory of Open Access Journals (Sweden)

Ayryan E.A.

2016-01-01

Full Text Available A local variation in the thickness of the waveguide layer of integrated optics waveguide causes a local decrease of phase velocity, and hence bending of rays and of the wave front. The relationship of the waveguide layer thickness profile h (y, z with the distribution of the effective refractive index of the waveguide β (y, z is described in terms of a particular model of waveguide solutions of the Maxwell equations. In the model of comparison waveguides the support of the thickness irregularity of the waveguide layer Δh coincides with the support of inhomogeneity of the effective refractive index Δβ. A more adequate but more cumbersome model of the adiabatic waveguide modes allows them to mismatch supp Δh ⊃ supp Δβ. In this paper, we solve the problem of the Δh reconstruction on the base of given Δβ of the thin film generalized waveguide Luneburg lens in a model of adiabatic waveguide modes. The solution is found in the form of a linear combination of Gaussian exponential functions and in the form of a cubic spline for the cylindrically symmetric Δh (r and in the form of a cubic spline for Δβ (r.

Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy

International Nuclear Information System (INIS)

Gouder, S.; Mahamdi, R.; Aouassa, M.; Escoubas, S.; Favre, L.; Ronda, A.; Berbezier, I.

2014-01-01

Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow planar and fully relaxed Ge membranes. The single crystal Ge layers have been deposited by molecular beam epitaxy (MBE) on PS substrate. During deposition, the pore network of PS layers has been filled with Ge. We investigate the structure and morphology of PS as fabricated and after annealing at various temperatures. We show that the PS crystalline lattice is distorted and expanded in the direction perpendicular to the substrate plane due to the presence of chemisorbed –OH. An annealing at high temperature (> 500 °C), greatly changes the PS morphology and structure. This change is marked by an increase of the pore diameter while the lattice parameter becomes tensily strained in the plane (compressed in the direction perpendicular). The morphology and structure of Ge layers are investigated by transmission electron microscopy, high resolution X-ray diffraction and atomic force microscopy as a function of the deposition temperature and deposited thickness. The results show that the surface roughness, level of relaxation and Si-Ge intermixing (Ge content) depend on the growth temperature and deposited thickness. Two sub-layers are distinguished: the layer incorporated inside the PS pores (high level of intermixing) and the layer on top of the PS surface (low level of intermixing). When deposited at temperature > 500 °C, the Ge layers are fully relaxed with a top Si 1−x Ge x layer x = 0.74 and a very flat surface. Such layer can serve as fully relaxed ultra-thin SiGe pseudo-substrate with high Ge content. The epitaxy of Ge on sacrificial soft PS pseudo-substrate in the experimental conditions described here provides an easy way to fabricate fully relaxed SiGe pseudo-substrates. Moreover, Ge thin films epitaxially deposited by MBE on PS could be used as relaxed pseudo-substrate in conventional microelectronic technology. - Highlights: • We have developed a rapid and low

CrN/AlN superlattice coatings synthesized by pulsed closed field unbalanced magnetron sputtering with different CrN layer thicknesses

International Nuclear Information System (INIS)

Lin Jianliang; Moore, John J.; Mishra, Brajendra; Pinkas, Malki; Zhang Xuhai; Sproul, William D.

2009-01-01

CrN/AlN superlattice coatings with different CrN layer thicknesses were prepared using a pulsed closed field unbalanced magnetron sputtering system. A decrease in the bilayer period from 12.4 to 3.0 nm and simultaneously an increase in the Al/(Cr + Al) ratio from 19.1 to 68.7 at.% were obtained in the CrN/AlN coatings when the Cr target power was decreased from 1200 to 200 W. The bilayer period and the structure of the coatings were characterized by means of low angle and high angle X-ray diffraction and transmission electron microscopy. The mechanical and tribological properties of the coatings were studied using the nanoindentation and ball-on-disc wear tests. It was found that CrN/AlN superlattice coatings synthesized in the current study exhibited a single phase face-centered cubic structure with well defined interfaces between CrN and AlN nanolayers. Decreases in the residual stress and the lattice parameter were identified with a decrease in the CrN layer thickness. The hardness of the coatings increased with a decrease in the bilayer period and the CrN layer thickness, and reached the highest value of 42 GPa at a bilayer period of 4.1 nm (CrN layer thickness of 1.5 nm, AlN layer thickness of 2.5 nm) and an Al/(Cr + Al) ratio of 59.3 at.% in the coatings. A low coefficient of friction of 0.35 and correspondingly low wear rate of 7 x 10 -7 mm 3 N -1 m -1 were also identified in this optimized CrN/AlN coating when sliding against a WC-6%Co ball.

Comparative study of the retinal nerve fibre layer thickness performed with optical coherence tomography and GDx scanning laser polarimetry in patients with primary open-angle glaucoma.

Science.gov (United States)

Wasyluk, Jaromir T; Jankowska-Lech, Irmina; Terelak-Borys, Barbara; Grabska-Liberek, Iwona

2012-03-01

We compared the parameters of retinal nerve fibre layer in patients with advanced glaucoma with the use of different OCT (Optical Coherence Tomograph) devices in relation to analogical measurements performed with GDx VCC (Nerve Fiber Analyzer with Variable Corneal Compensation) scanning laser polarimetry. Study subjects had advanced primary open-angle glaucoma, previously treated conservatively, diagnosed and confirmed by additional examinations (visual field, ophthalmoscopy of optic nerve, gonioscopy), A total of 10 patients were enrolled (9 women and 1 man), aged 18-70 years of age. Nineteen eyes with advanced glaucomatous neuropathy were examined. 1) Performing a threshold perimetry Octopus, G2 strategy and ophthalmoscopy of optic nerve to confirm the presence of advanced primary open-angle glaucoma; 2) performing a GDx VCC scanning laser polarimetry of retinal nerve fibre layer; 3) measuring the retinal nerve fibre layer thickness with 3 different optical coherence tomographs. The parameters of the retinal nerve fibre layer thickness are highly correlated between the GDx and OCT Stratus and 3D OCT-1000 devices in mean retinal nerve fibre layer thickness, retinal nerve fibre layer thickness in the upper sector, and correlation of NFI (GDx) with mean retinal nerve fibre layer thickness in OCT examinations. Absolute values of the retinal nerve fibre layer thickness (measured in µm) differ significantly between GDx and all OCT devices. Examination with OCT devices is a sensitive diagnostic method of glaucoma, with good correlation with the results of GDx scanning laser polarimetry of the patients.

Electrical properties of thick-layer piezo resistors based on Bi2Ru2O7

International Nuclear Information System (INIS)

Golonka, L.; Tankiewicz, S.

1997-01-01

Piezoelectric effect and electrical properties of thick-layer resistors based on Bi 2 Ru 2 O 7 (on ceramic substrate) have been studied. The influence of selected technological parameters (sintering temperature, chemical composition, heat treatment) on system properties has been estimated. 4 refs, 7 figs

Growth of thick La2Zr2O7 buffer layers for coated conductors by polymer-assisted chemical solution deposition

International Nuclear Information System (INIS)

Zhang, Xin; Zhao, Yong; Xia, Yudong; Guo, Chunsheng; Cheng, C.H.; Zhang, Yong; Zhang, Han

2015-01-01

Highlights: • We develops a low-cost and high-efficient technology of fabricating LZO buffer layers. • Sufficient thickness LZO buffer layers have been obtained on NiW (2 0 0) alloy substrate. • Highly biaxially textured YBCO thin film has been deposited on LZO/NiW. - Abstract: La 2 Zr 2 O 7 (LZO) epitaxial films have been deposited on LaAlO 3 (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa 2 Cu 3 O 7−x (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm 2 at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors

Regression Methods for Virtual Metrology of Layer Thickness in Chemical Vapor Deposition

DEFF Research Database (Denmark)

Purwins, Hendrik; Barak, Bernd; Nagi, Ahmed

2014-01-01

The quality of wafer production in semiconductor manufacturing cannot always be monitored by a costly physical measurement. Instead of measuring a quantity directly, it can be predicted by a regression method (Virtual Metrology). In this paper, a survey on regression methods is given to predict...... average Silicon Nitride cap layer thickness for the Plasma Enhanced Chemical Vapor Deposition (PECVD) dual-layer metal passivation stack process. Process and production equipment Fault Detection and Classification (FDC) data are used as predictor variables. Various variable sets are compared: one most...... algorithm, and Support Vector Regression (SVR). On a test set, SVR outperforms the other methods by a large margin, being more robust towards changes in the production conditions. The method performs better on high-dimensional multivariate input data than on the most predictive variables alone. Process...

Endoscopic full-thickness resection for gastric submucosal tumors arising from the muscularis propria layer.

Science.gov (United States)

Huang, Liu-Ye; Cui, Jun; Lin, Shu-Juan; Zhang, Bo; Wu, Cheng-Rong

2014-10-14

To evaluate the efficacy, safety and feasibility of endoscopic full-thickness resection (EFR) for the treatment of gastric submucosal tumors (SMTs) arising from the muscularis propria. A total of 35 gastric SMTs arising from the muscularis propria layer were resected by EFR between January 2010 and September 2013. EFR consists of five major steps: injecting normal saline into the submucosa; pre-cutting the mucosal and submucosal layers around the lesion; making a circumferential incision as deep as the muscularis propria around the lesion using endoscopic submucosal dissection and an incision into the serosal layer around the lesion with a Hook knife; a full-thickness resection of the tumor, including the serosal layer with a Hook or IT knife; and closing the gastric wall with metallic clips. Of the 35 gastric SMTs, 14 were located at the fundus, and 21 at the corpus. EFR removed all of the SMTs successfully, and the complete resection rate was 100%. The mean operation time was 90 min (60-155 min), the mean hospitalization time was 6.0 d (4-10 d), and the mean tumor size was 2.8 cm (2.0-4.5 cm). Pathological examination confirmed the presence of gastric stromal tumors in 25 patients, leiomyomas in 7 and gastric autonomous nerve tumors in 2. No gastric bleeding, peritonitis or abdominal abscess occurred after EFR. Postoperative contrast roentgenography on the third day detected no contrast extravasation into the abdominal cavity. The mean follow-up period was 6 mo, with no lesion residue or recurrence noted. EFR is efficacious, safe and minimally invasive for patients with gastric SMTs arising from the muscularis propria layer. This technique is able to resect deep gastric lesions while providing precise pathological information about the lesion. With the development of EFR, the indications of endoscopic resection might be extended.

Surface characterization of Zr/Ti/Nb tri-layered films deposited by magnetron sputtering on Si(111) and stainless steel substrates

Energy Technology Data Exchange (ETDEWEB)

Tallarico, Denise A.; Gobbi, Angelo L.; Filho, Pedro I. Paulin; Galtayries, Anouk; Nascente, Pedro A. P. [Federal University of Sao Carlos, Department of Materials Engineering, Via Washington Luis km 235, CEP 13565-905, Sao Carlos, SP (Brazil); Brazilian Synchrotron Light Laboratory, Microfabrication Laboratory, Rua Giuseppe Maximo Scolfaro 10.000, CEP 13083-100, Campinas, SP (Brazil); Federal University of Sao Carlos, Department of Materials Engineering, Via Washington Luis km 235, CEP 13565-905, Sao Carlos, SP (Brazil); Ecole Nationale Superieure de Chimie de Paris (Chimie ParisTech), Laboratoire de Physico-Chimie des Surfaces, UMR CNRS 7045, F-75231 Paris cedex 05 (France); Federal University of Sao Carlos, Department of Materials Engineering, Via Washington Luis km 235, CEP 13565-905, Sao Carlos, SP (Brazil)

2012-09-15

Among metallic materials, commercially pure titanium and titanium alloys are very often used as biomaterials for implants. Among these alloys, titanium-aluminum-vanadium alloy Ti-6 A-4 V is one of the most commonly used due to its excellent biocompatibility and ability to allow bone-implant integration. A new class of Ti alloys employs Zr for solid-solution hardening and Nb as {beta}-phase stabilizer. Metals such as Ti, Nb, and Zr-known as valve metals-usually have their surfaces covered by a thin oxide film that forms spontaneously in air. This oxide film constitutes a barrier between the metal and the medium. The Ti-Nb-Zr alloys have mechanical and corrosion resistance characteristics which make them suitable for use as implants. Tri-layered films of Ti-Nb-Zr were deposited on both Si(111) and stainless steel (SS) substrates using dc magnetron sputtering equipment, under an argon atmosphere according to the following methodology: a 100 nm thick layer of Nb was deposited on the substrate, followed by a 200 nm thick layer of Ti, and finally a 50 nm thick layer of Zr, on top of the multilayer stack. The morphology and chemical composition of the films were analyzed by atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectrometry (ToF-SIMS). AFM images showed that the Zr/Ti/Nb tri-layer films presented nanostructured grains and low roughness. The ToF-SIMS depth profiles confirmed the formation of a three-layered film on Si(111) with well-defined and sharp interfaces between the layers, while the deposition on the stainless steel substrate caused slight intermixing at the different alloy/Nb, Nb/Ti and Ti/Zr interfaces, reflecting the greater roughness of the raw substrate. The XPS results for the Zr/Ti/Nb layers deposited on Si(111) and SS confirmed that the outermost layer consisted of Zr only, with a predominance of ZrO{sub 2}, as the metal layer is passivated in air. An oxidation treatment of 1000 Degree

Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy

Science.gov (United States)

Schulte, K. L.; Zutter, B. T.; Wood, A. W.; Babcock, S. E.; Kuech, T. F.

2014-03-01

Thick InxGa1-xAs metamorphic buffer layers (MBLs) grown by hydride vapor phase epitaxy (HVPE) were studied. Relationships between MBL properties and growth parameters such as grading rate, cap layer thickness, final xInAs, and deposition temperature (TD) were explored. The MBLs were characterized by measurement of in-plane residual strain (ɛ¦¦), surface etch pit density (EPD), and surface roughness. Capping layer thickness had a strong effect on strain relaxation, with thickly capped samples exhibiting the lowest ɛ¦¦. EPD was higher in samples with thicker caps, reflecting their increased relaxation through dislocation generation. ɛ¦¦ and EPD were weakly affected by the grading rate, making capping layer thickness the primary structural parameter which controls these properties. MBLs graded in discrete steps had similar properties to MBLs with continuous grading. In samples with identical thickness and 10-step grading style, ɛ¦¦ increased almost linearly with final xInAs, while total relaxation stayed relatively constant. Relaxation as a function of xInAs could be described by an equilibrium model in which dislocation nucleation is impeded by the energy of the existing dislocation array. EPD was constant from xInAs = 0 to 0.24 then increased exponentially, which is related to the increased dislocation interaction and blocking seen at higher dislocation densities. RMS roughness increased with xInAs above a certain strain rate (0.15%/µm) samples grown below this level possessed large surface hillocks and high roughness values. The elimination of hillocks at higher values of xInAs is attributed to increased density of surface steps and is related to the out-of-plane component of the burgers vector of the dominant type of 60° dislocation. TD did not affect ɛ¦¦ for samples with a given xInAs. EPD tended to increase with TD, indicating dislocation glide likely is impeded at higher temperatures.

Reduction in Retinal Nerve Fiber Layer Thickness in Young Adults with Autism Spectrum Disorders

Science.gov (United States)

Emberti Gialloreti, Leonardo; Pardini, Matteo; Benassi, Francesca; Marciano, Sara; Amore, Mario; Mutolo, Maria Giulia; Porfirio, Maria Cristina; Curatolo, Paolo

2014-01-01

Recent years have seen an increase in the use of retinal nerve fiber layer (RNFL) evaluation as an easy-to-use, reproducible, proxy-measure of brain structural abnormalities. Here, we evaluated RNFL thickness in a group of subjects with high functioning autism (HFA) or with Asperger Syndrome (AS) to its potential as a tool to study autism…

[Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

Science.gov (United States)

Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

2010-10-01

The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

Densification of ∼5 nm-thick SiO_2 layers by nitric acid oxidation

International Nuclear Information System (INIS)

Choi, Jaeyoung; Joo, Soyeong; Park, Tae Joo; Kim, Woo-Byoung

2017-01-01

Highlights: • Leakage current density of the commercial PECVD grown ∼5 nm SiO_2 layer has been decreased about three orders of magnitude by densification. • The densification of SiO_2 layer is achieved by high oxidation ability of O·. • Densities of suboxide, fixed charge (N_f) and defect state (N_d) in SiO_2/Si interface are decreased by NAOS and PMA. • Tunneling barrier height (Φ_t) is increased because of the increase of atomic density in SiO_2 layer. - Abstract: Low-temperature nitric acid (HNO_3) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO_2/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of −1 V decreases by about two orders of magnitude from 1.868 × 10"−"5 A/cm"2. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10"−"8 A/cm"2) approximately three orders of magnitude less than the as-grown SiO_2 layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si"1"+, Si"2"+ and Si"3"+) in the SiO_2/Si interface, as well as a decrease in the equilibrium density of defect sites (N_d) and fixed charge density (N_f). The barrier height (Φ_t) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO_2 layer in combination with the removal of OH species and increase in interfacial properties at the SiO_2/Si interface.

Direct measurements of the velocity and thickness of ''explosively'' propagating buried molten layers in amorphous silicon

International Nuclear Information System (INIS)

Lowndes, D.H.; Jellison, G.E. Jr.; Pennycook, S.J.; Withrow, S.P.; Mashburn, D.N.

1986-01-01

Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ''explosively'' propagating buried molten layers in ion implantation-amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling-velocity relationship of approx. 14 K/(m/s). Z-contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

Energy Technology Data Exchange (ETDEWEB)

Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Zhonghua; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

2016-12-01

Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

International Nuclear Information System (INIS)

Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

2016-01-01

Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

International Nuclear Information System (INIS)

Vickers, M.E.; Kappers, M.J.; Smeeton, T.M.; Thrush, E.J.; Barnard, J.S.; Humphreys, C.J.

2003-01-01

We have determined the indium content and the layer thicknesses in an InGaN epilayer and InGaN/GaN quantum well structures by high-resolution x-ray diffraction (XRD) using the (002) reflection. The thickness of the total repeat (an InGaN well plus a GaN barrier) in the superlattice is easily determined from the spacing between the satellite peaks in an omega/2theta scan. Measurement of the individual thickness of InGaN and GaN layers and the indium content is less straightforward, since for multilayer structures the peak positions are influenced by both the indium content and the thickness ratio of the GaN to the InGaN layer. Thus, several different models may give reasonable fits to data collected over a limited range (about 1 deg. omega/2theta either side of the (002)) showing only lower-order (-3 to +3) satellite peaks. Whenever possible, we have collected data over a wide range (about 4 deg. omega/2theta) and determined the thickness ratio by examination of the relative intensities of weak higher-order satellite peaks (-7 to +5). An alternative but less sensitive method is to use relative intensities from x-ray reflectivity measurements to give the thickness ratio. Once the thickness of both the InGaN and GaN layers has been established, the InGaN composition can be determined from the peak positions. If the quality of the samples is poor, because of inhomogeneities or wide diffuse interfaces, there are insufficient data to characterize the structures. There is good agreement between the composition of the epilayer as determined by XRD and secondary ion mass spectroscopy and good agreement between x-ray and electron microscopy results for the quantum well structures. We find no variation from Vegard's rule for In contents less than 0.20. This article shows that structural parameters of high-quality InGaN/GaN superlattices with 10 and 5 repeats can be determined reliably by x-ray techniques: The InGaN and GaN thicknesses to ±1 Aa and the In content to ±0.01

Dependence of magnetic properties on ferromagnetic layer thickness in trilayer Co/Ge/Co films with granular semiconducting spacer

International Nuclear Information System (INIS)

Patrin, G.S.; Lee, C.-G.; Turpanov, I.A.; Zharkov, S.M.; Velikanov, D.A.; Maltsev, V.K.; Li, L.A.; Lantsev, V.V.

2006-01-01

We have investigated the magnetic properties of trilayer films of Co-Ge-Co. At a fixed thickness of germanium of 3.5 nm, the formation and distribution of metastable amorphous and cubic phases depends on the thickness of the ferromagnetic layer. The portion of the stable hexagonal phase is affected, too. Possible mechanisms for forming the observed magnetic structure are discussed

Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

KAUST Repository

Shen, Chao

2015-03-19

We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm2). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.

Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

KAUST Repository

Shen, Chao; Ng, Tien Khee; Ooi, Boon S.

2015-01-01

We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm2). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.

Effect of Catalytic Layer Thickness on Diameter of Vertically Aligned Individual Carbon Nanotubes

Directory of Open Access Journals (Sweden)

Hyun Kyung Jung

2014-01-01

Full Text Available The effect of catalytic thin film thickness on the diameter control of individual carbon nanotubes grown by plasma enhanced chemical vapor deposition was investigated. Individual carbon nanotubes were grown on catalytic nanodot arrays, which were fabricated by e-beam lithography and e-beam evaporation. During e-beam evaporation of the nanodot pattern, more catalytic metal was deposited at the edge of the nanodots than the desired catalyst thickness. Because of this phenomenon, carbon atoms diffused faster near the center of the dots than at the edge of the dots. The carbon atoms, which were gathered at the interface between the catalytic nanodot and the diffusion barrier, accumulated near the center of the dot and lifted the catalyst off. From the experiments, an individual carbon nanotube with the same diameter as that of the catalytic nanodot was obtained from a 5 nm thick catalytic nanodot; however, an individual carbon nanotube with a smaller diameter (~40% reduction was obtained from a 50 nm thick nanodot. We found that the thicker the catalytic layer, the greater the reduction in diameter of the carbon nanotubes. The diameter-controlled carbon nanotubes could have applications in bio- and nanomaterial scanning and as a contrast medium for magnetic resonance imaging.

Thickness and nanomechanical properties of protective layer formed by TiF4 varnish on enamel after erosion

Directory of Open Access Journals (Sweden)

Maria Isabel Dantas de MEDEIROS

2016-01-01

Full Text Available Abstract The layer formed by fluoride compounds on tooth surface is important to protect the underlying enamel from erosion. However, there is no investigation into the properties of protective layer formed by NaF and TiF4 varnishes on eroded enamel. This study aimed to evaluate the thickness, topography, nanohardness, and elastic modulus of the protective layer formed by NaF and TiF4 varnishes on enamel after erosion using nanoindentation and atomic force microscopy (AFM. Human enamel specimens were sorted into control, NaF, and TiF4 varnish groups (n = 10. The initial nanohardness and elastic modulus values were obtained and varnishes were applied to the enamel and submitted to erosive challenge (10 cycles: 5 s cola drink/5 s artificial saliva. Thereafter, nanohardness and elastic modulus were measured. Both topography and thickness were evaluated by AFM. The data were subjected to ANOVA, Tukey’s test and Student’s t test (α = 0.05. After erosion, TiF4 showed a thicker protective layer compared to the NaF group and nanohardness and elastic modulus values were significantly lower than those of the control group. It was not possible to measure nanohardness and elastic modulus in the NaF group due to the thin protective layer formed. AFM showed globular deposits, which completely covered the eroded surface in the TiF4 group. After erosive challenge, the protective layer formed by TiF4 varnish showed significant properties and it was thicker than the layer formed by NaF varnish.

Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

Science.gov (United States)

Damianos, D.; Vitrant, G.; Lei, M.; Changala, J.; Kaminski-Cachopo, A.; Blanc-Pelissier, D.; Cristoloveanu, S.; Ionica, I.

2018-05-01

In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

DEFF Research Database (Denmark)

Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.

2007-01-01

In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...... for thick film PZT sintered at 850degC. E-beam evaporated Al and Pt is patterned on PZT with a lift-off process with a line width down to 3 mum. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode....

Formation and investigation of multilayer nanostructured coatings TiN/MoN for different layers thicknesses with c-pvd

International Nuclear Information System (INIS)

Pogrebnyak, A.D.; Bondar, O.V.; Postol'nyj, B.A.; Andreev, A.A.; Abadias, G.; Beresnev, V.M.; Sobol', O.B.

2013-01-01

Multilayer coatings based on TiN/MoN were obtained using the vacuum arc evaporation cathode method (C-PVD). Multilayers thickness was in the range 6,7 ÷ 8,7 μm and monolayers thickness was 2, 10, 20 and 40 nm. Vacuum-arc unit Bulat 6 was used for depositions. For the analysis of multilayer structures and properties of nanostructured coatings XRD analysis method was used (D8 ADVANCE, Bruker). For elemental composition and morphology investigation of the surface layers and multilayered coatings SEM (JEOL-7001F) with EDX attachment was used. Also HRTEM method was used to analyze the phase composition. In addition, this article provides investigation of hardness by Micro-Hardness Tester CSM (Switzerland). AFM was used for additional analysis of the topography and surface roughness of these coatings. This investigation have revealed the relationship between the layers thicknesses, substrate potential, the annealing process, physical and mechanical properties of samples. (authors)

Glass transition and intermixing of amorphous water and methanol

International Nuclear Information System (INIS)

Souda, Ryutaro

2004-01-01

The diffusion of molecules in amorphous water and methanol films has been investigated on the basis of time-of-flight secondary ion mass spectrometry as a function of temperature. The glass-liquid transition of the amorphous water film occurs at 130-145 K as confirmed from the surface segregation of embedded methanol molecules. The morphology of the pure amorphous water film changes drastically at 160 K as a consequence of dewetting induced by the surface tension and the strongly decreased viscosity of the film. The morphology of the amorphous methanol film changes at 115 K following the self-diffusion onset at 80 K. The binary films of water and heavy methanol are intermixed completely at 136 K as evidenced by the occurrence of the H/D exchange

Effects of the thickness of NiO hole transport layer on the performance of all-inorganic quantum dot light emitting diode

International Nuclear Information System (INIS)

Zhang, Xiao Li; Dai, Hai Tao; Zhao, Jun Liang; Li, Chen; Wang, Shu Guo; Sun, Xiao Wei

2014-01-01

All-inorganic quantum dot light emitting diodes (QLEDs) have recently gained great attention owing to their high stability under oxygenic, humid environment and higher operating currents. In this work, we fabricated all-inorganic CdSe/ZnS core-shell QLEDs composed of ITO/NiO/QDs/ZnO/Al, in which NiO and ZnO thin film deposited via all-solution method were employed as hole and electron transport layer, respectively. To achieve high light emitting efficiency, the balance transport between electrons and holes play a key role. In this work, the effects of the thickness of NiO film on the performance of QLEDs were explored experimentally in details. NiO layers with various thicknesses were prepared with different rotation speeds. Experimental results showed that thinner NiO layer deposited at higher rotation speed had higher transmittance and larger band gap. Four typical NiO thickness based QLEDs were fabricated to optimize the hole transport layer. Thinner NiO layer based device performs bright emission with high current injection, which is ascribed to the reduced barrier height between hole transport layer and quantum dot. - Highlights: • All-inorganic quantum dot light emitting diodes (QLEDs) were fabricated. • Thinner NiO film can effectively enhance on–off properties of devices. • Improved performance of QLEDs is mainly attributed to energy barrier reduction

Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

KAUST Repository

Al-Jabr, Ahmad

2016-04-28

We increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing process investigated, we achieved lasing at 638 nm in conjunction with reduction in the lasing threshold current by close to 500 mA in a moderately intermixed laser. Lasing in orange color, as well as spontaneous emission in the yellow and green color regime, were also achieved by extending the annealing conditions. The significance of the current work became apparent when one considers that achieving these tunable wavelengths by increasing the Al content in quantum wells during epitaxy growth leads to severe lattice-mismatch and poor material quality. Hence, our Al "drive-in" intermixing process is a viable approach for forming Al-rich InAlGaP quantum well, which is essential for realizing efficient optoelectronic devices in the "green-yellow-orange gap". © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

International Nuclear Information System (INIS)

Lee, Ko-Hsin; Thomas, Kevin; Gocalinska, Agnieszka; Manganaro, Marina; Corbett, Brian; Pelucchi, Emanuele; Peters, Frank H.

2012-01-01

We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiN x dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 °C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift.

Prospective Study on Retinal Nerve Fibre Layer Thickness Changes in Isolated Unilateral Retrobulbar Optic Neuritis

Directory of Open Access Journals (Sweden)

Gordon S. K. Yau

2013-01-01

Full Text Available Purpose. To investigate the retinal nerve fibre layer (RNFL thickness after unilateral acute optic neuritis using optical coherence tomography (OCT. Patients and Methods. This prospective cohort study recruited consecutive patients with a first episode of isolated, unilateral acute optic neuritis. RNFL thickness and visual acuity (VA of the attack and normal fellow eye were measured at presentation and 3 months in both the treatment and nontreatment groups. Results. 11 subjects received systemic steroids and 9 were treated conservatively. The baseline RNFL thickness was similar in the attack and fellow eye (P≥0.4. At 3 months, the attack eye had a thinner temporal (P=0.02 and average (P=0.05 RNFL compared to the fellow eye. At 3 months, the attack eye had significant RNFL thinning in the 4 quadrants and average thickness (P≤0.0002 compared to baseline. The RNFL thickness between the treatment and nontreatment groups was similar at baseline and 3 months (P≥0.1. Treatment offered better VA at 3 months (0.1 ± 0.2 versus 0.3 ± 0.2 LogMAR, P=0.04. Conclusion. Generalized RNFL thinning occurred at 3 months after a first episode of acute optic neuritis most significantly in the temporal quadrant and average thickness. Visual improvement with treatment was independent of RNFL thickness.

Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2 : Large area, thickness control and tuneable morphology

NARCIS (Netherlands)

Sharma, A.; Verheijen, M.A.; Wu, L.; Karwal, S.; Vandalon, V.; Knoops, H.C.M.; Sundaram, R.S.; Hofmann, J.P.; Kessels, W.M.M.; Bol, A.A.

2018-01-01

Low-temperature controllable synthesis of monolayer-to-multilayer thick MoS2 with tuneable morphology is demonstrated by using plasma enhanced atomic layer deposition (PEALD). The characteristic self-limiting ALD growth with a growth-per-cycle of 0.1 nm per cycle and digital thickness control down

Effect of Substrate Permittivity and Thickness on Performance of Single-Layer, Wideband, U-Slot Antennas on Microwave Substrates

National Research Council Canada - National Science Library

Natarajan, V; Chatterjee, D

2004-01-01

This paper presents effects of substrate permittivity and thickness on the performance characteristics like impedance bandwidth, radiation efficiency and gain of a single-layer, wideband, U-slot antenna...

Stimulated transformation in nano-layered composites with Se0.6Te0.4

International Nuclear Information System (INIS)

Malyovanik, M.; Shipljak, M.; Cheresnya, V.; Ivan, I.; Csik, A.; Kokenyesi, S.; Debrecen Univ.

2005-01-01

- and thermo-stimulated crystallization of nanometer thick Se 0.6 Te 0.4 films embedded into SiO x matrix in the form of nano-multilayer structure were measured with optical transmission and electrical conductivity change. It was found, that the as-prepared Se 0.6 Te 0.4 /SiO x structure contains crystallites which in a considerable extent determine the transformation due to the grain growth limited process. Illumination essentially enhances crystallization both in the single Se 0.6 Te 0.4 layer and in the Se 0.6 Te 0.4 /SiO x structure, making the process more nucleation-dependent and fast what results in the higher efficiency of the stimulated transformation and optical recording in such a nano-layered structure. Photo- and thermo-stimulated interdiffusion prevail in Se 0.6 Te 0.4 /As 2 S 3 nano-layered structure what results in efficient intermixing of the adjacent nanometer thick layers, in photo- and thermally induced bleaching and in the change of electrical conductivity due to the formation of the solid solution of chalcogenide components. (author)

Frenkel-Charge-Transfer exciton intermixing theory for molecular crystals with two isolated Frenkel exciton states.

Science.gov (United States)

Bondarev, Igor; Popescu, Adrian

We develop an analytical theory for the intra-intermolecular exciton intermixing in periodic 1D chains of planar organic molecules with two isolated low-lying Frenkel exciton states, typical of copper phthalocyanine (CuPc) and other transition metal phthalocyanine molecules. We formulate the Hamiltonian and use the exact Bogoliubov diagonalization procedure to derive the eigen energy spectrum for the two lowest intramolecular Frenkel excitons coupled to the intermolecular charge transfer (CT) exciton state. By comparing our theoretical spectrum with available experimental CuPc absorption data, we obtain the parameters of the Frenkel-CT exciton intermixing in CuPc thin films. The two Frenkel exciton states here are spaced apart by 0.26 eV, and the charge transfer exciton state is 50 meV above the lowest Frenkel exciton. Both Frenkel excitons are strongly mixed with the CT exciton, showing the coupling constant 0.17 eV in agreement with earlier electron transport experiments. Our results can be used for the proper interpretation of the physical properties of crystalline phthalocyanines. DOE-DE-SC0007117 (I.B.), UNC-GA ROI Grant (A.P.).

Focused-ion-beam induced interfacial intermixing of magnetic bilayers for nanoscale control of magnetic properties

International Nuclear Information System (INIS)

Burn, D M; Atkinson, D; Hase, T P A

2014-01-01

Modification of the magnetic properties in a thin-film ferromagnetic/non-magnetic bilayer system by low-dose focused ion-beam (FIB) induced intermixing is demonstrated. The highly localized capability of FIB may be used to locally control magnetic behaviour at the nanoscale. The magnetic, electronic and structural properties of NiFe/Au bilayers were investigated as a function of the interfacial structure that was actively modified using focused Ga + ion irradiation. Experimental work used MOKE, SQUID, XMCD as well as magnetoresistance measurements to determine the magnetic behavior and grazing incidence x-ray reflectivity to elucidate the interfacial structure. Interfacial intermixing, induced by low-dose irradiation, is shown to lead to complex changes in the magnetic behavior that are associated with monotonic structural evolution of the interface. This behavior may be explained by changes in the local atomic environment within the interface region resulting in a combination of processes including the loss of moment on Ni and Fe, an induced moment on Au and modifications to the spin-orbit coupling between Au and NiFe. (paper)

Remotely Sensed Active Layer Thickness (ReSALT at Barrow, Alaska Using Interferometric Synthetic Aperture Radar

Directory of Open Access Journals (Sweden)

Kevin Schaefer

2015-03-01

Full Text Available Active layer thickness (ALT is a critical parameter for monitoring the status of permafrost that is typically measured at specific locations using probing, in situ temperature sensors, or other ground-based observations. Here we evaluated the Remotely Sensed Active Layer Thickness (ReSALT product that uses the Interferometric Synthetic Aperture Radar technique to measure seasonal surface subsidence and infer ALT around Barrow, Alaska. We compared ReSALT with ground-based ALT obtained using probing and calibrated, 500 MHz Ground Penetrating Radar at multiple sites around Barrow. ReSALT accurately reproduced observed ALT within uncertainty of the GPR and probing data in ~76% of the study area. However, ReSALT was less than observed ALT in ~22% of the study area with well-drained soils and in ~1% of the area where soils contained gravel. ReSALT was greater than observed ALT in some drained thermokarst lake basins representing ~1% of the area. These results indicate remote sensing techniques based on InSAR could be an effective way to measure and monitor ALT over large areas on the Arctic coastal plain.

Foam Core Particleboards with Intumescent FRT Veneer: Cone Calorimeter Testing With Varying Adhesives, Surface Layer Thicknesses, and Processing Conditions

Science.gov (United States)

Mark A. Dietenberger; Johannes Welling; Ali Shalbafan

2014-01-01

Intumescent FRT Veneers adhered to the surface of foam core particleboard to provide adequate fire protection were evaluated by means of cone calorimeter tests (ASTM E1354). The foam core particleboards were prepared with variations in surface layer treatment, adhesives, surface layer thicknesses, and processing conditions. Ignitability, heat release rate profile, peak...

High-frequency internal waves and thick bottom mixed layers observed by gliders in the Gulf Stream

Science.gov (United States)

Todd, Robert E.

2017-06-01

Autonomous underwater gliders are conducting high-resolution surveys within the Gulf Stream along the U.S. East Coast. Glider surveys reveal two mechanisms by which energy is extracted from the Gulf Stream as it flows over the Blake Plateau, a portion of the outer continental shelf between Florida and North Carolina where bottom depths are less than 1000 m. Internal waves with vertical velocities exceeding 0.1 m s-1 and frequencies just below the local buoyancy frequency are routinely found over the Blake Plateau, particularly near the Charleston Bump, a prominent topographic feature. These waves are likely internal lee waves generated by the subinertial Gulf Stream flow over the irregular bathymetry of the outer continental shelf. Bottom mixed layers with O(100) m thickness are also frequently encountered; these thick bottom mixed layers likely form in the lee of topography due to enhanced turbulence generated by O(1) m s-1 near-bottom flows.

Thickness related textural properties of retinal nerve fiber layer in color fundus images.

Science.gov (United States)

Odstrcilik, Jan; Kolar, Radim; Tornow, Ralf-Peter; Jan, Jiri; Budai, Attila; Mayer, Markus; Vodakova, Martina; Laemmer, Robert; Lamos, Martin; Kuna, Zdenek; Gazarek, Jiri; Kubena, Tomas; Cernosek, Pavel; Ronzhina, Marina

2014-09-01

Images of ocular fundus are routinely utilized in ophthalmology. Since an examination using fundus camera is relatively fast and cheap procedure, it can be used as a proper diagnostic tool for screening of retinal diseases such as the glaucoma. One of the glaucoma symptoms is progressive atrophy of the retinal nerve fiber layer (RNFL) resulting in variations of the RNFL thickness. Here, we introduce a novel approach to capture these variations using computer-aided analysis of the RNFL textural appearance in standard and easily available color fundus images. The proposed method uses the features based on Gaussian Markov random fields and local binary patterns, together with various regression models for prediction of the RNFL thickness. The approach allows description of the changes in RNFL texture, directly reflecting variations in the RNFL thickness. Evaluation of the method is carried out on 16 normal ("healthy") and 8 glaucomatous eyes. We achieved significant correlation (normals: ρ=0.72±0.14; p≪0.05, glaucomatous: ρ=0.58±0.10; p≪0.05) between values of the model predicted output and the RNFL thickness measured by optical coherence tomography, which is currently regarded as a standard glaucoma assessment device. The evaluation thus revealed good applicability of the proposed approach to measure possible RNFL thinning. Copyright © 2014 The Authors. Published by Elsevier Ltd.. All rights reserved.

Correlation between local glaucomatous visual field defects and loss of nerve fiber layer thickness measured with polarimetry and spectral domain OCT.

Science.gov (United States)

Horn, Folkert K; Mardin, Christian Y; Laemmer, Robert; Baleanu, Delia; Juenemann, Anselm M; Kruse, Friedrich E; Tornow, Ralf P

2009-05-01

To study the correlation between local perimetric field defects and glaucoma-induced thickness reduction of the nerve layer measured in the peripapillary area with scanning laser polarimetry (SLP) and spectral domain optical coherence tomography (SOCT) and to compare the results with those of a theoretical model. The thickness of the retinal nerve fiber layer was determined in 32 sectors (11.25 degrees each) by using SLP with variable cornea compensation (GDxVCC; Laser Diagnostics, San Diego, CA) and the newly introduced high-resolution SOCT (Spectralis; Heidelberg Engineering, Heidelberg, Germany). Eighty-eight healthy subjects served as control subjects, to determine the thickness deviation in patients with glaucoma. The relationship between glaucomatous nerve fiber reduction and visual field losses was calculated in six nerve fiber bundle-related areas. Sixty-four patients at different stages of open-angle glaucoma and 26 patients with ocular hypertension underwent perimetry (Octopus G1; Haag-Streit, Köniz, Switzerland) and measurements with the two morphometric techniques. Sector-shaped analyses between local perimetric losses and reduction of the retinal nerve fiber layer thickness showed a significant association for corresponding areas except for the central visual field in SLP. Correlation coefficients were highest in the area of the nasal inferior visual field (SOCT, -0.81; SLP, -0.57). A linear model describes the association between structural and functional damage. Localized perimetric defects can be explained by reduced nerve fiber layer thickness. The data indicate that the present SOCT is useful for determining the functional-structural relationship in peripapillary areas and that association between perimetric defects and corresponding nerve fiber losses is stronger for SOCT than for the present SLP. (ClinicalTrials.gov number, NCT00494923.).

Trends in (LaMnO3)n/(SrTiO3)m superlattices with varying layer thicknesses

KAUST Repository

Jilili, J.

2015-09-01

We investigate the thickness dependence of the structural, electronic, and magnetic properties of (LaMnO3)n/(SrTiO3)m (n, m = 2, 4, 6, 8) superlattices using density functional theory. The electronic structure turns out to be highly sensitive to the onsite Coulomb interaction. In contrast to bulk SrTiO3, strongly distorted O octahedra are observed in the SrTiO3 layers with a systematic off centering of the Ti atoms. The systems favour ferromagnetic spin ordering rather than the antiferromagnetic spin ordering of bulk LaMnO3 and all show half-metallicity, while a systematic reduction of the minority spin band gaps as a function of the LaMnO3 and SrTiO3 layer thicknesses originates from modifications of the Ti dxy states.

Evolution of structure with Fe layer thickness in low dimensional Fe/Tb multilayered structures

International Nuclear Information System (INIS)

Harris, V.G.; Aylesworth, K.D.; Elam, W.T.; Koon, N.C.; Coehoorn, R.; Hoving, W.

1992-01-01

This paper reports on the atomic structure of a series of low-dimensional Fe/Tb multilayered structures which has been explored using a conversion-electron, extended x-ray absorption fine structure (EXAFS) technique. A structural transition from a close-packed amorphous structure to a body-centered crystalline structure is detected to occur over an Fe layer thickness range of 12.5 Angstrom to 15.0 Angstrom (Tb thickness is held constant at 4.5 Angstrom). Magnetic properties, specifically, magnetization, anisotropy field, and Kerr rotation angle, are measured and found to change significantly in response to this transition. Exploitation of the polarization properties of synchrotron radiation allowed for the description of the atomic structure both perpendicular and parallel to the sample plane

Device and performance parameters of Cu(In,Ga)(Se,S)2-based solar cells with varying i-ZnO layer thickness

International Nuclear Information System (INIS)

Macabebe, E.Q.B.; Sheppard, C.J.; Dyk, E.E. van

2009-01-01

In pursuit of low-cost and highly efficient thin film solar cells, Cu(In,Ga)(Se,S) 2 /CdS/i-ZnO/ZnO:Al (CIGSS) solar cells were fabricated using a two-step process. The thickness of i-ZnO layer was varied from 0 to 454 nm. The current density-voltage (J-V) characteristics of the devices were measured, and the device and performance parameters of the solar cells were obtained from the J-V curves to analyze the effect of varying i-ZnO layer thickness. The device parameters were determined using a parameter extraction method that utilized particle swarm optimization. The method is a curve-fitting routine that employed the two-diode model. The J-V curves of the solar cells were fitted with the model and the parameters were determined. Results show that as the thickness of i-ZnO was increased, the average efficiency and the fill factor (FF) of the solar cells increase. Device parameters reveal that although the series resistance increased with thicker i-ZnO layer, the solar cells absorbed more photons resulting in higher short-circuit current density (J sc ) and, consequently, higher photo-generated current density (J L ). For solar cells with 303-454 nm-thick i-ZnO layer, the best devices achieved efficiency between 15.24% and 15.73% and the fill factor varied between 0.65 and 0.67.

Correlation between peripapillary retinal nerve fiber layer thickness and fundus autofluorescence in primary open-angle glaucoma

Directory of Open Access Journals (Sweden)

Reznicek L

2013-09-01

Full Text Available Lukas Reznicek,* Florian Seidensticker,* Thomas Mann, Irene Hübert, Alexandra Buerger, Christos Haritoglou, Aljoscha S Neubauer, Anselm Kampik, Christoph Hirneiss, Marcus Kernt Department of Ophthalmology, Ludwig-Maximilians-University, Munich, Germany *These authors contributed equally to this work Purpose: To investigate the relationship between retinal nerve fiber layer (RNFL thickness and retinal pigment epithelium alterations in patients with advanced glaucomatous visual field defects. Methods: A consecutive, prospective series of 82 study eyes with primary open-angle glaucoma and advanced glaucomatous visual field defects were included in this study. All study participants underwent a full ophthalmic examination followed by visual field testing with standard automated perimetry as well as spectral-domain optical coherence tomography (SD-OCT for peripapillary RNFL thickness and Optos wide-field fundus autofluorescence (FAF images. A pattern grid with corresponding locations between functional visual field sectors and structural peripapillary RNFL thickness was aligned to the FAF images at corresponding location. Mean FAF intensity (range: 0 = black and 255 = white of each evaluated sector (superotemporal, temporal, inferotemporal, inferonasal, nasal, superonasal was correlated with the corresponding peripapillary RNFL thickness obtained with SD-OCT. Results: Correlation analyses between sectoral RNFL thickness and standardized FAF intensity in the corresponding topographic retina segments revealed partly significant correlations with correlation coefficients ranging between 0.004 and 0.376 and were statistically significant in the temporal inferior central field (r = 0.324, P = 0.036 and the nasal field (r = 0.376, P = 0.014. Conclusion: Retinal pigment epithelium abnormalities correlate with corresponding peripapillary RNFL damage, especially in the temporal inferior sector of patients with advanced glaucomatous visual field defects. A

Magnetism at the V/Gd interface

International Nuclear Information System (INIS)

Mouketo, L; M'Passi-Mabiala, B; Binggeli, N

2010-01-01

Recent experimental investigations into the magnetic properties of V/Gd bilayers have shown that vanadium, which is nonmagnetic in the bulk, can acquire a magnetic moment in such systems. We have performed ab initio pseudopotential calculations to examine the magnetic behavior of V(110)/Gd(0001) bilayers for V layers with thicknesses up to 4 monolayers (ML). We considered both abrupt and atomic intermixed V/Gd interfaces. In both cases, the magnetic moment of the V layer is found to align antiparallel to the moment of the Gd layer, consistent with the experimental observation. However, the magnitude of the V moment at the abrupt interface is considerably smaller than the moments reported experimentally. In the presence of atomic intermixing, instead, substantially larger V moments are found, closer to the experimentally reported moments. On the basis of the calculated atomic and spin resolved density of states, we discuss the possible mechanism responsible for the observed Gd-V antiferromagnetic coupling.

Seismic Wave Propagation from Underground Chemical Explosions: Sensitivity to Velocity and Thickness of a Weathered Layer

Science.gov (United States)

Hirakawa, E. T.; Ezzedine, S. M.

2017-12-01

Recorded motions from underground chemical explosions are complicated by long duration seismic coda as well as motion in the tangential direction. The inability to distinguish the origins of these complexities as either source or path effects comprises a limitation to effective monitoring of underground chemical explosions. With numerical models, it is possible to conduct rigorous sensitivity analyses for chemical explosive sources and their resulting ground motions under the influence of many attributes, including but not limited to complex velocity structure, topography, and non-linear source characteristics. Previously we found that topography can cause significant scattering in the direct wave but leads to relatively little motion in the coda. Here, we aim to investigate the contribution from the low-velocity weathered layer that exists in the shallow subsurface apart from and in combination with surface topography. We use SW4, an anelastic anisotropic fourth order finite difference code to simulate chemical explosive source in a 1D velocity structure consisting of a single weathered layer over a half space. A range of velocity magnitudes are used for the upper weathered layer with the velocities always being lower than that of the granitic underlaying layer. We find that for lower weathered layer velocities, the wave train is highly dispersed and causes a large percentage of energy to be contained in the coda in relation to the entire time series. The percentage of energy contained in the coda grows with distance from the source but saturates at a certain distance that depends on weathered layer velocity and thickness. The saturation onset distance increases with decreasing layer thickness and increasing velocity of the upper layer. Measurements of relative coda energy and coda saturation onset distance from real recordings can provide an additional constraint on the properties of the weathered layer in remote sites as well as test sites like the Nevada

Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

Science.gov (United States)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

2018-05-01

We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

A Prospective Randomized Clinical Trial of Single vs. Double Layer Closure of Hysterotomy at the Time of Cesarean Delivery: The Effect on Uterine Scar Thickness.

Science.gov (United States)

Bamberg, Christian; Dudenhausen, Joachim W; Bujak, Verena; Rodekamp, Elke; Brauer, Martin; Hinkson, Larry; Kalache, Karim; Henrich, Wolfgang

2018-06-01

 We undertook a randomized clinical trial to examine the outcome of a single vs. a double layer uterine closure using ultrasound to assess uterine scar thickness.  Participating women were allocated to one of three uterotomy suture techniques: continuous single layer unlocked suturing, continuous locked single layer suturing, or double layer suturing. Transvaginal ultrasound of uterine scar thickness was performed 6 weeks and 6 - 24 months after Cesarean delivery. Sonographers were blinded to the closure technique.  An "intent-to-treat" and "as treated" ANOVA analysis included 435 patients (n = 149 single layer unlocked suturing, n = 157 single layer locked suturing, and n = 129 double layer suturing). 6 weeks postpartum, the median scar thickness did not differ among the three groups: 10.0 (8.5 - 12.3 mm) single layer unlocked vs. 10.1 (8.2 - 12.7 mm) single layer locked vs. 10.8 (8.1 - 12.8 mm) double layer; (p = 0.84). At the time of the second follow-up, the uterine scar was not significantly (p = 0.06) thicker if the uterus had been closed with a double layer closure 7.3 (5.7 - 9.1 mm), compared to single layer unlocked 6.4 (5.0 - 8.8 mm) or locked suturing techniques 6.8 (5.2 - 8.7 mm). Women who underwent primary or elective Cesarean delivery showed a significantly (p = 0.03, p = 0.02, "as treated") increased median scar thickness after double layer closure vs. single layer unlocked suture.  A double layer closure of the hysterotomy is associated with a thicker myometrium scar only in primary or elective Cesarean delivery patients. © Georg Thieme Verlag KG Stuttgart · New York.

Glutamate neurons are intermixed with midbrain dopamine neurons in nonhuman primates and humans

Science.gov (United States)

Root, David H.; Wang, Hui-Ling; Liu, Bing; Barker, David J.; Mód, László; Szocsics, Péter; Silva, Afonso C.; Maglóczky, Zsófia; Morales, Marisela

2016-01-01

The rodent ventral tegmental area (VTA) and substantia nigra pars compacta (SNC) contain dopamine neurons intermixed with glutamate neurons (expressing vesicular glutamate transporter 2; VGluT2), which play roles in reward and aversion. However, identifying the neuronal compositions of the VTA and SNC in higher mammals has remained challenging. Here, we revealed VGluT2 neurons within the VTA and SNC of nonhuman primates and humans by simultaneous detection of VGluT2 mRNA and tyrosine hydroxylase (TH; for identification of dopamine neurons). We found that several VTA subdivisions share similar cellular compositions in nonhuman primates and humans; their rostral linear nuclei have a high prevalence of VGluT2 neurons lacking TH; their paranigral and parabrachial pigmented nuclei have mostly TH neurons, and their parabrachial pigmented nuclei have dual VGluT2-TH neurons. Within nonhuman primates and humans SNC, the vast majority of neurons are TH neurons but VGluT2 neurons were detected in the pars lateralis subdivision. The demonstration that midbrain dopamine neurons are intermixed with glutamate or glutamate-dopamine neurons from rodents to humans offers new opportunities for translational studies towards analyzing the roles that each of these neurons play in human behavior and in midbrain-associated illnesses such as addiction, depression, schizophrenia, and Parkinson’s disease. PMID:27477243

Impact of the AlN seeding layer thickness on GaN orientation on high index Si-substrates

Energy Technology Data Exchange (ETDEWEB)

Ravash, Roghaiyeh; Blaesing, Juergen; Veit, Peter; Hempel, Thomas; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg (Germany). FNW/IEP/AHE

2010-07-01

Silicon is considered to be a reasonable alternative to substrates such as sapphire and SiC, because of its low price and availability in large diameters. Because of spontaneous and strain induced piezoelectric polarization field along the c-axis, leading to the separation of electrons and holes in quantum wells reducing the recombination efficiency, c-axis oriented GaN-based light emitters have a low efficiency, especially in the longer wavelength region. In order to reduce or eliminate these polarization effects, semi-polar or non-polar GaN-heterostructure is favored. In this work we investigated the growth of GaN applying a low temperature AlN seeding layer with various thicknesses. The impact of the AlN seeding layer on GaN orientation using different Si substrate orientations (e. g. (211), (711), (410), (100)+4.5 off) were investigated by x-ray diffraction measurements in Bragg-Brentano geometry and X-ray pole figure measurements. We found that the thickness of the AlN seeding layer plays a significant role in obtaining different GaN textures. Applying a about 4 nm AlN seeding layer we achieved a single crystalline GaN epilayer on Si (211) with a 18 tilted c-axis orientation. Some of the samples were characterized by scanning electron microscopy and transmission electron microscopy.

Modulation of spin-orbit torque efficiency by thickness control of heavy metal layers in Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Sethi, P.; Krishnia, S.; Li, S.H.; Lew, W.S., E-mail: wensiang@ntu.edu.sg

2017-03-15

We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane magnetic fields and spin Hall angle (SHA) using AC harmonic Hall voltage measurements techniques on Ta/Pt/Co/Pt/Co/Ta thin film structures. The proposed Co/Pt thin film double stack gives property enhancement on thermal stability and perpendicular magnetization anisotropy strength over the single stack Pt/Co/Ta. In the proposed Co/Pt double stack we observed that increasing the Ta capping thickness to three times enhances the SHA in similar order, consistent with larger spin injection efficiency. Doubling the Pt spacer layer thickness reduces the SHA by nearly 1.4 times, due to partial cancellation of SOT by bottom layer Pt, negating the increase from the top Co/Pt interface. The in-plane current threshold for magnetization switching is lower with the increase of the SHA.

In situ evaluation of density, viscosity, and thickness of adsorbed soft layers by combined surface acoustic wave and surface plasmon resonance.

Science.gov (United States)

Francis, Laurent A; Friedt, Jean-Michel; Zhou, Cheng; Bertrand, Patrick

2006-06-15

We show the theoretical and experimental combination of acoustic and optical methods for the in situ quantitative evaluation of the density, the viscosity, and the thickness of soft layers adsorbed on chemically tailored metal surfaces. For the highest sensitivity and an operation in liquids, a Love mode surface acoustic wave (SAW) sensor with a hydrophobized gold-coated sensing area is the acoustic method, while surface plasmon resonance (SPR) on the same gold surface as the optical method is monitored simultaneously in a single setup for the real-time and label-free measurement of the parameters of adsorbed soft layers, which means for layers with a predominant viscous behavior. A general mathematical modeling in equivalent viscoelastic transmission lines is presented to determine the correlation between experimental SAW signal shifts and the waveguide structure including the presence of the adsorbed layer and the supporting liquid from which it segregates. A methodology is presented to identify from SAW and SPR simulations the parameters representatives of the soft layer. During the absorption of a soft layer, thickness or viscosity changes are observed in the experimental ratio of the SAW signal attenuation to the SAW signal phase and are correlated with the theoretical model. As application example, the simulation method is applied to study the thermal behavior of physisorbed PNIPAAm, a polymer whose conformation is sensitive to temperature, under a cycling variation of temperature between 20 and 40 degrees C. Under the assumption of the bulk density and the bulk refractive index of PNIPAAm, thickness and viscosity of the film are obtained from simulations; the viscosity is correlated to the solvent content of the physisorbed layer.

E2CAV, Pavement layer thickness estimation system based on image texture operators

Directory of Open Access Journals (Sweden)

Brayan Barrios Arcila

2017-01-01

Full Text Available Context: Public roads are an essential part of economic progress in any country; they are fundamental for increasing the efficiency on transportation of goods and are a remarkable source of employment. For its part, Colombia has few statistics on the condition of its roads; according with INVIAS the state of the roads in Colombia can be classified as “Very Good” (21.1%, “Good” (34.7%, and “Regular” or “Bad” (43.46%. Thus, from the point of view of pavement rehabilitation, it is worth securing the quality of those roads classified as “Regular” or “Bad”. Objective: In this paper we propose a system to estimate the thickness of the pavement layer using image segmentation methods. The pavement thickness is currently estimated using radars of terrestrial penetration, extraction of cores or making pips; and it is part of structural parameters in the systems of evaluation of pavement. Method: The proposed system is composed of a vertical movement control unit, which introduces a video scope into a small hole in the pavement, then the images are obtained and unified in a laptop. Finally, this mosaic is processed through texture operators to estimate the thickness of the pavement. Users can select between the Otsu method and Gabor filters to process the image data. Results: The results include laboratory and field tests; these tests show errors of 5.03% and 11.3%, respectively, in the thickness of the pavement. Conclusion: The proposed system is an attractive option for local estimation of pavement thickness, with minimal structural damage and less impact on mobility and number of operators.

Non-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS)

Science.gov (United States)

Goyal, Anshu; Yadav, Brajesh S.; Raman, R.; Kapoor, Ashok K.

2018-02-01

Angle resolved X-ray photoelectron spectroscopy (ARXPS) and secondary ion mass spectrometry (SIMS) investigations have been carried out to characterize the GaN cap layer in AlGaN/GaN HEMT structure. The paper discusses the qualitative (presence or absence of a cap layer) and quantitative (cap layer thickness) characterization of cap layer in HEMT structure non-destructively using ARXPS measurements in conjunction with the theoretical modeling. Further the relative sensitive factor (RSF=σ/Ga σAl ) for Ga to Al ratio was estimated to be 0.963 and was used in the quantification of GaN cap layer thickness. Our results show that Al/Ga intensity ratio varies with the emission angle in the presence of GaN cap layer and otherwise remains constant. Also, the modeling of this intensity ratio gives its thickness. The finding of ARXPS was also substantiated by SIMS depth profiling studies.

Non-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS

Directory of Open Access Journals (Sweden)

Anshu Goyal

2018-02-01

Full Text Available Angle resolved X-ray photoelectron spectroscopy (ARXPS and secondary ion mass spectrometry (SIMS investigations have been carried out to characterize the GaN cap layer in AlGaN/GaN HEMT structure. The paper discusses the qualitative (presence or absence of a cap layer and quantitative (cap layer thickness characterization of cap layer in HEMT structure non-destructively using ARXPS measurements in conjunction with the theoretical modeling. Further the relative sensitive factor (RSF=σGaσAl for Ga to Al ratio was estimated to be 0.963 and was used in the quantification of GaN cap layer thickness. Our results show that Al/Ga intensity ratio varies with the emission angle in the presence of GaN cap layer and otherwise remains constant. Also, the modeling of this intensity ratio gives its thickness. The finding of ARXPS was also substantiated by SIMS depth profiling studies.

Rapid, nondestructive estimation of surface polymer layer thickness using attenuated total reflection fourier transform infrared (ATR FT-IR) spectroscopy and synthetic spectra derived from optical principles.

Science.gov (United States)

Weinstock, B André; Guiney, Linda M; Loose, Christopher

2012-11-01

We have developed a rapid, nondestructive analytical method that estimates the thickness of a surface polymer layer with high precision but unknown accuracy using a single attenuated total reflection Fourier transform infrared (ATR FT-IR) measurement. Because the method is rapid, nondestructive, and requires no sample preparation, it is ideal as a process analytical technique. Prior to implementation, the ATR FT-IR spectrum of the substrate layer pure component and the ATR FT-IR and real refractive index spectra of the surface layer pure component must be known. From these three input spectra a synthetic mid-infrared spectral matrix of surface layers 0 nm to 10,000 nm thick on substrate is created de novo. A minimum statistical distance match between a process sample's ATR FT-IR spectrum and the synthetic spectral matrix provides the thickness of that sample. We show that this method can be used to successfully estimate the thickness of polysulfobetaine surface modification, a hydrated polymeric surface layer covalently bonded onto a polyetherurethane substrate. A database of 1850 sample spectra was examined. Spectrochemical matrix-effect unknowns, such as the nonuniform and molecularly novel polysulfobetaine-polyetherurethane interface, were found to be minimal. A partial least squares regression analysis of the database spectra versus their thicknesses as calculated by the method described yielded an estimate of precision of ±52 nm.

Low leakage stoichiometric SrTiO{sub 3} dielectric for advanced metal-insulator-metal capacitors

Energy Technology Data Exchange (ETDEWEB)

Popovici, Mihaela; Kaczer, Ben; Redolfi, Augusto; Elshocht, Sven van; Jurczak, Malgorzata [imec Belgium, Leuven (Belgium); Afanas' ev, Valeri V. [Department of Physics and Astronomy, KU Leuven (Belgium); Sereni, Gabriele [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); Larcher, Luca [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); MDLab, Saint Christophe (Italy)

2016-05-15

Metal-insulator-metal capacitors (MIMCAP) with stoichiometric SrTiO{sub 3} dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr-rich STO seed layer, with the Ti-rich STO top layer. The resulted stoichiometric SrTiO{sub 3} would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr-rich STO which allow further equivalent oxide thickness downscaling. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Device and performance parameters of Cu(In,Ga)(Se,S){sub 2}-based solar cells with varying i-ZnO layer thickness

Energy Technology Data Exchange (ETDEWEB)

Macabebe, E.Q.B. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Sheppard, C.J. [Department of Physics, University of Johannesburg, P.O. Box 524, Auckland Park 2006 (South Africa); Dyk, E.E. van, E-mail: ernest.vandyk@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2009-12-01

In pursuit of low-cost and highly efficient thin film solar cells, Cu(In,Ga)(Se,S){sub 2}/CdS/i-ZnO/ZnO:Al (CIGSS) solar cells were fabricated using a two-step process. The thickness of i-ZnO layer was varied from 0 to 454 nm. The current density-voltage (J-V) characteristics of the devices were measured, and the device and performance parameters of the solar cells were obtained from the J-V curves to analyze the effect of varying i-ZnO layer thickness. The device parameters were determined using a parameter extraction method that utilized particle swarm optimization. The method is a curve-fitting routine that employed the two-diode model. The J-V curves of the solar cells were fitted with the model and the parameters were determined. Results show that as the thickness of i-ZnO was increased, the average efficiency and the fill factor (FF) of the solar cells increase. Device parameters reveal that although the series resistance increased with thicker i-ZnO layer, the solar cells absorbed more photons resulting in higher short-circuit current density (J{sub sc}) and, consequently, higher photo-generated current density (J{sub L}). For solar cells with 303-454 nm-thick i-ZnO layer, the best devices achieved efficiency between 15.24% and 15.73% and the fill factor varied between 0.65 and 0.67.

Normative Database and Color-code Agreement of Peripapillary Retinal Nerve Fiber Layer and Macular Ganglion Cell-inner Plexiform Layer Thickness in a Vietnamese Population.

Science.gov (United States)

Perez, Claudio I; Chansangpetch, Sunee; Thai, Andy; Nguyen, Anh-Hien; Nguyen, Anwell; Mora, Marta; Nguyen, Ngoc; Lin, Shan C

2018-06-05

Evaluate the distribution and the color probability codes of the peripapillary retinal nerve fiber layer (RNFL) and macular ganglion cell-inner plexiform layer (GCIPL) thickness in a healthy Vietnamese population and compare them with the original color-codes provided by the Cirrus spectral domain OCT. Cross-sectional study. We recruited non-glaucomatous Vietnamese subjects and constructed a normative database for peripapillary RNFL and macular GCIPL thickness. The probability color-codes for each decade of age were calculated. We evaluated the agreement with Kappa coefficient (κ) between OCT color probability codes with Cirrus built-in original normative database and the Vietnamese normative database. 149 eyes of 149 subjects were included. The mean age of enrollees was 60.77 (±11.09) years, with a mean spherical equivalent of +0.65 (±1.58) D and mean axial length of 23.4 (±0.87) mm. Average RNFL thickness was 97.86 (±9.19) microns and average macular GCIPL was 82.49 (±6.09) microns. Agreement between original and adjusted normative database for RNFL was fair for average and inferior quadrant (κ=0.25 and 0.2, respectively); and good for other quadrants (range: κ=0.63-0.73). For macular GCIPL κ agreement ranged between 0.39 and 0.69. After adjusting with the normative Vietnamese database, the percent of yellow and red color-codes increased significantly for peripapillary RNFL thickness. Vietnamese population has a thicker RNFL in comparison with Cirrus normative database. This leads to a poor color-code agreement in average and inferior quadrant between the original and adjusted database. These findings should encourage to create a peripapillary RNFL normative database for each ethnicity.

A glimpse beneath Antarctic sea ice: observation of platelet-layer thickness and ice-volume fraction with multifrequency EM

Science.gov (United States)

Hoppmann, Mario; Hunkeler, Priska A.; Hendricks, Stefan; Kalscheuer, Thomas; Gerdes, Rüdiger

2016-04-01

In Antarctica, ice crystals (platelets) form and grow in supercooled waters below ice shelves. These platelets rise, accumulate beneath nearby sea ice, and subsequently form a several meter thick, porous sub-ice platelet layer. This special ice type is a unique habitat, influences sea-ice mass and energy balance, and its volume can be interpreted as an indicator of the health of an ice shelf. Although progress has been made in determining and understanding its spatio-temporal variability based on point measurements, an investigation of this phenomenon on a larger scale remains a challenge due to logistical constraints and a lack of suitable methodology. In the present study, we applied a lateral constrained Marquardt-Levenberg inversion to a unique multi-frequency electromagnetic (EM) induction sounding dataset obtained on the ice-shelf influenced fast-ice regime of Atka Bay, eastern Weddell Sea. We adapted the inversion algorithm to incorporate a sensor specific signal bias, and confirmed the reliability of the algorithm by performing a sensitivity study using synthetic data. We inverted the field data for sea-ice and platelet-layer thickness and electrical conductivity, and calculated ice-volume fractions within the platelet layer using Archie's Law. The thickness results agreed well with drillhole validation datasets within the uncertainty range, and the ice-volume fraction yielded results comparable to other studies. Both parameters together enable an estimation of the total ice volume within the platelet layer, which was found to be comparable to the volume of landfast sea ice in this region, and corresponded to more than a quarter of the annual basal melt volume of the nearby Ekström Ice Shelf. Our findings show that multi-frequency EM induction sounding is a suitable approach to efficiently map sea-ice and platelet-layer properties, with important implications for research into ocean/ice-shelf/sea-ice interactions. However, a successful application of this

Densification of ∼5 nm-thick SiO{sub 2} layers by nitric acid oxidation

Energy Technology Data Exchange (ETDEWEB)

Choi, Jaeyoung [Department of Energy Engineering, Dankook University, Cheonan 311-16 (Korea, Republic of); Joo, Soyeong [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Youngin 449-863 (Korea, Republic of); Park, Tae Joo [Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Kim, Woo-Byoung, E-mail: woo7838@dankook.ac.kr [Department of Energy Engineering, Dankook University, Cheonan 311-16 (Korea, Republic of)

2017-08-15

Highlights: • Leakage current density of the commercial PECVD grown ∼5 nm SiO{sub 2} layer has been decreased about three orders of magnitude by densification. • The densification of SiO{sub 2} layer is achieved by high oxidation ability of O·. • Densities of suboxide, fixed charge (N{sub f}) and defect state (N{sub d}) in SiO{sub 2}/Si interface are decreased by NAOS and PMA. • Tunneling barrier height (Φ{sub t}) is increased because of the increase of atomic density in SiO{sub 2} layer. - Abstract: Low-temperature nitric acid (HNO{sub 3}) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO{sub 2}/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of −1 V decreases by about two orders of magnitude from 1.868 × 10{sup −5} A/cm{sup 2}. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10{sup −8} A/cm{sup 2}) approximately three orders of magnitude less than the as-grown SiO{sub 2} layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si{sup 1+}, Si{sup 2+} and Si{sup 3+}) in the SiO{sub 2}/Si interface, as well as a decrease in the equilibrium density of defect sites (N{sub d}) and fixed charge density (N{sub f}). The barrier height (Φ{sub t}) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO{sub 2} layer in combination with the removal of OH species and increase in interfacial properties at the SiO{sub 2}/Si interface.

The Thickness of the Mushy Layer on the Floor of the Skaergaard Magma Chamber at Apatite Saturation

DEFF Research Database (Denmark)

Holness, Marian B.; Tegner, Christian; Nielsen, Troels F. D.

2017-01-01

We present a novel way of constraining the thickness of the crystal mush in fractionated layered intrusions using detailed microstructural analysis. The results are combined with geochemical data to create a snapshot of the crystal mush on the floor of the Skaergaard magma chamber in the period i...

Retinal nerve fiber layer thickness is associated with lesion length in acute optic neuritis

DEFF Research Database (Denmark)

Kallenbach, K; Simonsen, Helle Juhl; Sander, B

2010-01-01

included 41 patients with unilateral optic neuritis and 19 healthy volunteers. All patients were evaluated and examined within 28 days of onset of symptoms. The peripapillary retinal nerve fiber layer thickness (RNFLT), an objective quantitative measure of optic nerve head edema, was measured by optical...... coherence tomography and the length and location of the inflammatory optic nerve lesion were evaluated using MRI. RESULTS: Ophthalmoscopically, 34% of the patients had papillitis. The retinal nerve fiber layer in affected eyes (mean 123.1 microm) was higher during the acute phase than that of fellow eyes......BACKGROUND: Acute optic neuritis occurs with and without papillitis. The presence of papillitis has previously been thought to imply an anterior location of the neuritis, but imaging studies seeking to test this hypothesis have been inconclusive. METHODS: This prospective observational cohort study...

Optimization by simulation of the nature of the buffer, the gap profile of the absorber and the thickness of the various layers in CZTSSe solar cells

Science.gov (United States)

Chadel, Meriem; Chadel, Asma; Moustafa Bouzaki, Mohammed; Aillerie, Michel; Benyoucef, Boumediene; Charles, Jean-Pierre

2017-11-01

Performances of ZnO/ZnS/CZTSSe polycrystalline thin film solar cells (Copper Zinc Tin Sulphur Selenium-solar cell) were simulated for different thicknesses of the absorber and ZnS buffer layers. Simulations were performed with SCAPS (Solar Cell Capacitance Simulator) software, starting with actual parameters available from industrial data for commercial cells processing. The influences of the thickness of the various layers in the structure of the solar cell and the gap profile of the CZTSSe absorber layer on the performance of the solar cell were studied in detail. Through considerations of recent works, we discuss possible routes to enhance the performance of CZTSSe solar cells towards a higher efficiency level. Thus, we found that for one specific thickness of the absorber layer, the efficiency of the CZTSSe solar cell can be increased when a ZnS layer replaces the usual CdS buffer layer. On the other hand, the efficiency of the solar cell can be also improved when the absorber layer presents a grad-gap. In this case, the maximum efficiency for the CZTSSe cell was found equal to 13.73%.

Electrical resistivity tomography determines the spatial distribution of clay layer thickness and aquifer vulnerability, Kandal Province, Cambodia

Science.gov (United States)

Uhlemann, Sebastian; Kuras, Oliver; Richards, Laura A.; Naden, Emma; Polya, David A.

2017-10-01

Despite being rich in water resources, many areas of South East Asia face difficulties in securing clean water supply. This is particularly problematic in regions with a rapidly growing population. In this study, the spatial variability of the thickness of a clay layer, controlling surface - groundwater interactions that affect aquifer vulnerability, was investigated using electrical resistivity tomography (ERT). Data were acquired along two transects, showing significant differences in the imaged resistivities. Borehole samples were analyzed regarding particle density and composition, and linked to their resistivity. The obtained relationships were used to translate the field electrical resistivities into lithologies. Those revealed considerable variations in the thickness of the clay layer, ranging from 0 m up to 25 m. Geochemical data, highlighting zones of increased ingress of surface water into the groundwater, confirmed areas of discontinuities in the clay layer, which act as preferential flow paths. The results may guide urban planning of the Phnom Penh city expansion, in order to supply the growing population with safe water. The presented approach of using geophysics to estimate groundwater availability, accessibility, and vulnerability is not only applicable to Kandal Province, Cambodia, but also to many other areas of fast urbanization in South East Asia and beyond.

The magnetic characteristics of perpendicular magnetic tunnel junction with MgO and Al-O oxidation layers in various thickness

International Nuclear Information System (INIS)

Chen, T.-J.; Canizo-Cabrera, A.; Chang, C.-H.; Liao, K.-A.; Li, Simon C.; Hou, C.-K.; Wu Teho

2006-01-01

In this work we show the magnetic characteristics of perpendicular magnetic tunnel junction (pMTJ) with different oxidation layers. The pMTJs structures were made by RF and DC magnetron sputtering. Individual depositions of magnesium oxide layers and of aluminum oxide films were prepared by plasma oxidation. The experimental results showed that the initial switching field was decreased as the magnesium oxide thickness was increased. Further work of the aluminum oxide surface roughness and hysteresis loop influenced by different oxidation layers on pMTJs structures will be discussed as well

Sodium chloride crystallization from thin liquid sheets, thick layers, and sessile drops in microgravity

Science.gov (United States)

Fontana, Pietro; Pettit, Donald; Cristoforetti, Samantha

2015-10-01

Crystallization from aqueous sodium chloride solutions as thin liquid sheets, 0.2-0.7 mm thick, with two free surfaces supported by a wire frame, thick liquid layers, 4-6 mm thick, with two free surfaces supported by metal frame, and hemispherical sessile drops, 20-32 mm diameter, supported by a flat polycarbonate surface or an initially flat gelatin film, were carried out under microgravity on the International Space Station (ISS). Different crystal morphologies resulted based on the fluid geometry: tabular hoppers, hopper cubes, circular [111]-oriented crystals, and dendrites. The addition of polyethylene glycol (PEG-3350) inhibited the hopper growth resulting in flat-faced surfaces. In sessile drops, 1-4 mm tabular hopper crystals formed on the free surface and moved to the fixed contact line at the support (polycarbonate or gelatin) self-assembling into a shell. Ring formation created by sessile drop evaporation to dryness was observed but with crystals 100 times larger than particles in terrestrially formed coffee rings. No hopper pyramids formed. By choosing solution geometries offered by microgravity, we found it was possible to selectively grow crystals of preferred morphologies.

A glimpse beneath Antarctic sea ice: observation of platelet-layer thickness and ice-volume fraction with multi-frequency EM

Science.gov (United States)

Hendricks, S.; Hoppmann, M.; Hunkeler, P. A.; Kalscheuer, T.; Gerdes, R.

2015-12-01

In Antarctica, ice crystals (platelets) form and grow in supercooled waters below ice shelves. These platelets rise and accumulate beneath nearby sea ice to form a several meter thick sub-ice platelet layer. This special ice type is a unique habitat, influences sea-ice mass and energy balance, and its volume can be interpreted as an indicator for ice - ocean interactions. Although progress has been made in determining and understanding its spatio-temporal variability based on point measurements, an investigation of this phenomenon on a larger scale remains a challenge due to logistical constraints and a lack of suitable methodology. In the present study, we applied a lateral constrained Marquardt-Levenberg inversion to a unique multi-frequency electromagnetic (EM) induction sounding dataset obtained on the ice-shelf influenced fast-ice regime of Atka Bay, eastern Weddell Sea. We adapted the inversion algorithm to incorporate a sensor specific signal bias, and confirmed the reliability of the algorithm by performing a sensitivity study using synthetic data. We inverted the field data for sea-ice and sub-ice platelet-layer thickness and electrical conductivity, and calculated ice-volume fractions from platelet-layer conductivities using Archie's Law. The thickness results agreed well with drill-hole validation datasets within the uncertainty range, and the ice-volume fraction also yielded plausible results. Our findings imply that multi-frequency EM induction sounding is a suitable approach to efficiently map sea-ice and platelet-layer properties. However, we emphasize that the successful application of this technique requires a break with traditional EM sensor calibration strategies due to the need of absolute calibration with respect to a physical forward model.

Normative spectral domain optical coherence tomography data on macular and retinal nerve fiber layer thickness in Indians

Directory of Open Access Journals (Sweden)

Bindu Appukuttan

2014-01-01

Full Text Available Aim: To provide the normative data of macular and retinal nerve fiber layer (RNFL thickness in Indians using spectral domain OCT (Spectralis OCT, Heidelberg Engineering, Germany and to evaluate the effects of age, gender, and refraction on these parameters. Design: Observational, cross-sectional study. Materials and Methods: The eyes of 105 healthy patients aged between 20-75 years, with no ocular disease and best corrected visual acuity of 20/20, were scanned using standard scanning protocols by a single examiner. Exclusion criteria included glaucoma, retinal diseases, diabetes, history of prior intraocular surgery or laser treatment. The mean macular and RNFL thickness were recorded, and the effects of age, gender, and refraction on these parameters were evaluated. This data was compared with published literature on Caucasians to assess the ethnic variations of these parameters. Results: The normal central foveal thickness in healthy Indian eyes measured using Spectralis OCT was 260.1 ± 18.19 ΅m. The nasal inner quadrant showed maximum retinal thickness (338.88 ± 18.17 ΅m.The mean RNFL thickness was 101.43 ± 8.63 ΅m with maximum thickness in the inferior quadrant. The central foveal thickness showed a gender-based difference (P = 0.005 but did not correlate significantly with age (P = 0.134, whereas the parafoveal, perifoveal thickness, macular volume, and RNFL thickness showed significant negative correlation with age. Conclusions: Our study provides the normative database for Indians on Spectralis OCT. It also suggests that age should be considered while interpreting the macular thickness and RNFL, whereas gender should also be given consideration in central foveal thickness.

An Evaluation of Peripapillary Retinal Nerve Fiber Layer Thickness in Children With Epilepsy Receiving Treatment of Valproic Acid.

Science.gov (United States)

Dereci, Selim; Koca, Tuğba; Akçam, Mustafa; Türkyilmaz, Kemal

2015-07-01

We investigated the peripapillary retinal nerve fiber layer thickness with optical coherence tomography in epileptic children receiving valproic acid monotherapy. The study was conducted on children aged 8-16 years who were undergoing valproic acid monotherapy for epilepsy. The study group comprised a total of 40 children who met the inclusion criteria and 40 healthy age- and sex-matched children as a control group. Children with at least a 1-year history of epilepsy and taking 10-40 mg/kg/day treatment were included in the study. Peripapillary retinal nerve fiber layer thickness measurements were performed using Cirrus HD optical coherence tomography. All children and parents were informed about the study and informed consent was obtained from the parents of all the participants. The study group included 21 girls and 19 boys with a mean age of 10.6 ± 2.3 years. According to the results of optical coherence tomography measurements, the mean peripapillary retinal nerve fiber layer thickness was 91.6 ± 9.7 in the patient group and 95.5 ± 7.4 μm in the control group (P epilepsy who were receiving valproic acid monotherapy compared with healthy children. This situation can lead to undesirable results in terms of eye health. New studies are needed to investigate whether these findings are the result of epilepsy or can be attributed to valproic acid and whether there are adverse effects of valproic acid later in life. Copyright © 2015 Elsevier Inc. All rights reserved.

Use of a Soluble Anode in Electrodeposition of Thick Bismuth Telluride Layers

Science.gov (United States)

Maas, M.; Diliberto, S.; de Vaulx, C.; Azzouz, K.; Boulanger, C.

2014-10-01

Integration of thermoelectric devices within an automotive heat exchanger could enable conversion of lost heat into electrical energy, contributing to improved total output from the engine. For this purpose, synthesis of thick bismuth telluride (Bi2Te3) films is required. Bismuth telluride has been produced by an electrochemical method in nitric acid with a sacrificial bismuth telluride anode as the source of cations. The binary layer grows on the working electrode while the counter-electrode, a Bi2Te3 disk obtained by high frequency melting, is oxidized to BiIII and TeIV. This process leads to auto-regeneration of the solution without modification of its composition. The thickness of films deposited by use of the Bi2Te3 anode was approximately 10 times that without. To demonstrate the utility of a soluble anode in electrochemical deposition, we report characterization of the composition and morphology of the films obtained under different experimental conditions. Perfectly dense and regular Bi2Te3 films (˜400 μm) with low internal stress and uniform composition across the cross-section were prepared. Their thermoelectric properties were assessed.

Optical coherence tomography in retinitis pigmentosa: reproducibility and capacity to detect macular and retinal nerve fiber layer thickness alterations.

Science.gov (United States)

Garcia-Martin, Elena; Pinilla, Isabel; Sancho, Eva; Almarcegui, Carmen; Dolz, Isabel; Rodriguez-Mena, Diego; Fuertes, Isabel; Cuenca, Nicolas

2012-09-01

To evaluate the ability of time-domain and Fourier-domain optical coherence tomographies (OCTs) to detect macular and retinal nerve fiber layer atrophies in retinitis pigmentosa (RP). To test the intrasession reproducibility using three OCT instruments (Stratus, Cirrus, and Spectralis). Eighty eyes of 80 subjects (40 RP patients and 40 healthy subjects) underwent a visual field examination, together with 3 macular scans and 3 optic disk evaluations by the same experienced examiner using 3 OCT instruments. Differences between healthy and RP eyes were compared. The relationship between measurements with each OCT instrument was evaluated. Repeatability was studied by intraclass correlation coefficients and coefficients of variation. Macular and retinal nerve fiber layer atrophies were detected in RP patients for all OCT parameters. Macular and retinal nerve fiber layer thicknesses, as determined by the different OCTs, were correlated but significantly different (P < 0.05). Reproducibility was moderately high using Stratus, good using Cirrus and Spectralis, and excellent using the Tru-track technology of Spectralis. In RP eyes, measurements showed higher variability compared with healthy eyes. Differences in thickness measurements existed between OCT instruments, despite there being a high degree of correlation. Fourier-domain OCT can be considered a valid and repeatability technique to detect retinal nerve fiber layer atrophy in RP patients.

Growth of thick La{sub 2}Zr{sub 2}O{sub 7} buffer layers for coated conductors by polymer-assisted chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xin, E-mail: xzhang@my.swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Xia, Yudong [State Key Lab of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Guo, Chunsheng [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhang, Yong [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, Han [Department of Physics, Peking University, Beijing 100871 (China)

2015-06-15

Highlights: • We develops a low-cost and high-efficient technology of fabricating LZO buffer layers. • Sufficient thickness LZO buffer layers have been obtained on NiW (2 0 0) alloy substrate. • Highly biaxially textured YBCO thin film has been deposited on LZO/NiW. - Abstract: La{sub 2}Zr{sub 2}O{sub 7} (LZO) epitaxial films have been deposited on LaAlO{sub 3} (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm{sup 2} at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors.

Thick Escaping Magnetospheric Ion Layer in Magnetopause Reconnection with MMS Observations

Science.gov (United States)

Nagai, T.; Kitamura, N.; Hasagawa, H.; Shinohara, I.; Yokota, S.; Saito, Y.; Nakamura, R.; Giles, B. L.; Pollock, C.; Moore, T. E.;

Raman and electronic transport characterization of few- and single-layer-thick α-RuCl3

Science.gov (United States)

Zhou, Boyi; Henriksen, Erik

The layered magnetic semiconductor α-RuCl3, having a honeycomb lattice of spin-1/2 moments, has been identified as a potential candidate material to realize the Kitaev quantum spin liquid. In particular, bulk RuCl3 crystals have been studied and found to be on the cusp of manifesting QSL behavior. As the QSL is primarily a two-dimensional phenomenon, and since the layers of RuCl3 are weakly coupled, we propose to create and study a 2D spin-1/2 honeycomb system by isolating single sheets. Here we report the exfoliation of RuCl3 down to few- and single-layer-thick samples, which we characterize by Raman spectroscopy and atomic force microscopy at room temperature. We will also report our progress on measurements of basic electronic transport properties in the 2D RuCl3 system by controlling the chemical potential via gating in a field-effect configuration.

Anisotropic Growth of Otavite on Calcite: Implications for Heteroepitaxial Growth Mechanisms

Energy Technology Data Exchange (ETDEWEB)

Riechers, Shawn L.; Kerisit, Sebastien N.

2017-12-18

Elucidating how cation intermixing can affect the mechanisms of heteroepitaxial growth in aqueous media has remained a challenging endeavor. Toward this goal, in situ atomic force microscopy was employed to image the heteroepitaxial growth of otavite (CdCO3) at the (10-14) surface of calcite (CaCO3) single crystals in static aqueous conditions. Heteroepitaxial growth proceeded via spreading of three-dimensional (3D) islands and two-dimensional (2D) atomic layers at low and high initial saturation levels, respectively. Experiments were carried out as a function of applied force and imaging mode thus enabling determination of growth mechanisms unaltered by imaging artifacts. This approach revealed the significant anisotropic nature of heteroepitaxial growth on calcite in both growth modes and its dependence on supersaturation, intermixing, and substrate topography. The 3D islands not only grew preferentially along the [42-1] direction relative to the [010] direction, resulting in rod-like surface precipitates, but also showed clear preference for growth from the island end rich in obtuse/obtuse kink sites. Pinning to step edges was observed to often reverse this tendency. In the 2D growth mode, the relative velocities of acute and obtuse steps were observed to switch between the first and second atomic layers. This phenomenon stemmed from the significant Cd-Ca intermixing in the first layer, despite bulk thermodynamics predicting the formation of almost pure otavite. Composition effects were also responsible for the inability of 3D islands to grow on 2D layers in cases where both modes were observed to occur simultaneously. Overall, the AFM images highlighted the effects of intermixing on heteroepitaxial growth, particularly how it can induce thickness-dependent growth mechanisms at the nanoscale.

Impact of thickness reduction of the ZnO:Al window layer on opto-electronical properties of CIGSSe solar cells

Energy Technology Data Exchange (ETDEWEB)

Keller, Jan; Knipper, M.; Parisi, J.; Riedel, I. [Thin Film Photovoltaics, University of Oldenburg, D-26111 Oldenburg (Germany); Dalibor, T.; Avellan, A. [AVANCIS GmbH and Co. KG, D-81739 Munich (Germany)

2011-07-01

The application of highly doped transparent conducting oxides in chalcopyrite solar cells requires an optimized trade-off between optical transmission and sheet-conductivity. In this respect we studied the thickness variation of ZnO:Al films used as window layer in Cu(In,Ga)(Se,S){sub 2} (CIGSSe) thin film solar cells. Thin ZnO:Al layers (200nm) on glass exhibit significantly enhanced transmission at wavelengths {lambda}<400nm while a considerable sub-bandgap absorption at {lambda}>800nm appears in thicker films which is attributed to free charge carrier absorption. The IV-characteristics of CIGSSe solar cells with d{sub ZnO:Al}=200nm exhibit a strong enhancement of the short-circuit current density J{sub SC} ({delta}J{sub SC}=3mA) as compared to samples with conventional ZnO:Al-film thickness. However, the reduced parallel (R{sub p}) and increased series (R{sub s}) resistance of samples with thin ZnO:Al-layer cause reduction of the fill factor, which has direct consequences for the series connection of cells in a CIGSSe-module. XRD-diffractograms suggest that the high R{sub s} in thin ZnO:Al is not only related to the thickness but also due to reduced (002)-texture that appears to be beneficial for lateral conductivity. By thermographic investigations we are able to directly locate the cell-regimes responsible for the decreased R{sub p}.

Fatigue behavior of thick composite single lap joints

Energy Technology Data Exchange (ETDEWEB)

Tang, J.H.; Sridhar, I.; Srikanth, N. [Nanyang Technological Univ., Singapore (Singapore)

2012-07-01

In consideration of bondline thickness variability, in bonded joints where thick adherend is adopted, relative thick adhesive layer (2-5 mm) is preferable. This paper aims to give some insight in fatigue strength of adhesively bonded structures involving thick adherend coupled with thick adhesive layer. Single lap joints with nominal adherend thickness of 8 mm and two different nominal thicknesses (2.5 mm and 5.5 mm) were made and tested under fatigue loading. The failure mode exhibits always a tendency for interfacial initiation, followed by interlaminar separation. Fatigue strength for higher adhesive thickness is found to be lower. (Author)

Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers

International Nuclear Information System (INIS)

Lee, Tae Young; Chan Won, Young; Su Son, Dong; Lee, Seong-Rae; Ho Lim, Sang

2013-01-01

The effects of Co layer thickness and annealing temperature on the perpendicular magnetic anisotropy (PMA) properties of inverted [Pt (0.2 nm)/Co (t Co )] 6 multilayers (where t Co indicates the thickness of the Co layer) have been investigated. The cross-sectional microstructure, as observed from the high-resolution transmission electron microscope images, shows a clear layered structure with atomically flat interfaces both in the as-deposited state as well as after annealing, indicating the interface effects for PMA. The effective PMA energy density (K eff ) increases significantly with an increase in t Co from 0.2 to 0.28 nm and then becomes almost saturated with further increases in t Co , followed by a slight reduction at the highest Co thickness, t Co  = 0.6 nm. In order to explain the t Co dependence on K eff , the intrinsic PMA energy density (K i ) is calculated by additionally measuring a similar set of results for the saturation magnetization. The K i value increases nearly linearly with the increase in t Co from 0.2 to 0.5 nm, followed by saturation at a higher t Co value of 0.6 nm. Owing to a close relationship between K i and the quality of the interfaces, these results indicate a similar t Co dependence on the quality of the interfaces. This is further supported from the magnetic measurements of the samples annealed at the highest temperature of 500 °C, where a second phase is formed, which show a similar t Co dependence on the amount of the second phase. The K i value is nearly independent of the annealing temperature at t Co  ≤ 0.4 nm, above which a substantial reduction is observed, when the annealing temperature exceeds 500 °C

Modeling and simulation of stamp deflections in nanoimprint lithography: Exploiting backside grooves to enhance residual layer thickness uniformity

DEFF Research Database (Denmark)

Taylor, Hayden; Smistrup, Kristian; Boning, Duane

2011-01-01

We describe a model for the compliance of a nanoimprint stamp etched with a grid of backside grooves. We integrate the model with a fast simulation technique that we have previously demonstrated, to show how etched grooves help reduce the systematic residual layer thickness (RLT) variations...

Nano-crystalline thin and nano-particulate thick TiO2 layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

International Nuclear Information System (INIS)

Das, P.; Sengupta, D.; Kasinadhuni, U.; Mondal, B.; Mukherjee, K.

2015-01-01

Highlights: • Thin TiO 2 layer is deposited on conducting substrate using sol–gel based dip coating. • TiO 2 nano-particles are synthesized using hydrothermal route. • Thick TiO 2 particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO 2 passivation layer is introduced between the mesoporous TiO 2 nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effect of passivation layer, other two DSSCs are also developed separately using TiO 2 nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO 2 compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO 2 layer in between the mesoporous TiO 2 nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons

The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

International Nuclear Information System (INIS)

Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G.

2011-01-01

For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T cap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T cap = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T cap = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T cap 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≅6 ML, we found an unexpected thickening of the WL, almost independently of T cap . This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.

Static Buckling Model Tests and Elasto-plastic Finite Element Analysis of a Pile in Layers with Various Thicknesses

Science.gov (United States)

Okajima, Kenji; Imai, Junichi; Tanaka, Tadatsugu; Iida, Toshiaki

Damage to piles in the liquefied ground is frequently reported. Buckling by the excess vertical load could be one of the causes of the pile damage, as well as the lateral flow of the ground and the lateral load at the pile head. The buckling mechanism is described as a complicated interaction between the pile deformation by the vertical load and the earth pressure change cased by the pile deformation. In this study, series of static buckling model tests of a pile were carried out in dried sand ground with various thickness of the layer. Finite element analysis was applied to the test results to verify the effectiveness of the elasto-plastic finite element analysis combining the implicit-explicit mixed type dynamic relaxation method with the return mapping method to the pile buckling problems. The test results and the analysis indicated the possibility that the buckling load of a pile decreases greatly where the thickness of the layer increases.

Mid-Ocean Ridge Melt Supply and Glacial Cycles: A 3D EPR Study of Crustal Thickness, Layer 2A, and Bathymetry

Science.gov (United States)

Boulahanis, B.; Aghaei, O.; Carbotte, S. M.; Huybers, P. J.; Langmuir, C. H.; Nedimovic, M. R.; Carton, H. D.; Canales, J. P.

2017-12-01

Recent studies suggest that eustatic sea level fluctuations induced by glacial cycles in the Pleistocene may influence mantle-melting and volcanic eruptions at mid-ocean ridges (MOR), with models predicting variation in oceanic crustal thickness linked to sea level change. Previous analyses of seafloor bathymetry as a proxy for crustal thickness show significant spectral energy at frequencies linked to Milankovitch cycles of 1/23, 1/41, and 1/100 ky-1, however the effects of faulting in seafloor relief and its spectral characteristics are difficult to separate from climatic signals. Here we investigate the hypothesis of climate driven periodicity in MOR magmatism through spectral analysis, time series comparisons, and statistical characterization of bathymetry data, seismic layer 2A thickness (as a proxy for extrusive volcanism), and seafloor-to-Moho thickness (as a proxy for total magma production). We utilize information from a three-dimensional multichannel seismic study of the East Pacific Rise and its flanks from 9°36`N to 9°57`N. We compare these datasets to the paleoclimate "LR04" benthic δ18O stack. The seismic dataset covers 770 km2 and provides resolution of Moho for 92% of the imaged region. This is the only existing high-resolution 3-D image across oceanic crust, making it ideal for assessing the possibility that glacial cycles modulate magma supply at fast spreading MORs. The layer 2A grid extends 9 km (170 ky) from the ridge axis, while Moho imaging extends to a maximum of 16 km (310 ky). Initial results from the East Pacific Rise show a relationship between sea level and both crustal thickness and sea floor depth, consistent with the hypothesis that magma supply to MORs may be modulated by glacial cycles. Analysis of crustal thickness and bathymetry data reveals spectral peaks at Milankovitch frequencies of 1/100 ky-1 and 1/41 ky-1 where datasets extend sufficiently far from the ridge. The layer 2A grid does not extend sufficiently far from the

Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

Energy Technology Data Exchange (ETDEWEB)

Alsultany, Forat H., E-mail: foratusm@gmail.com; Ahmed, Naser M. [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Hassan, Z. [Institute of Nano-Optoelectronics Research and Technology Laboratory (INOR), Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2016-07-19

A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and UV-Vis spectrophotometer.

A semi-analytical solution for elastic analysis of rotating thick cylindrical shells with variable thickness using disk form multilayers.

Science.gov (United States)

Zamani Nejad, Mohammad; Jabbari, Mehdi; Ghannad, Mehdi

2014-01-01

Using disk form multilayers, a semi-analytical solution has been derived for determination of displacements and stresses in a rotating cylindrical shell with variable thickness under uniform pressure. The thick cylinder is divided into disk form layers form with their thickness corresponding to the thickness of the cylinder. Due to the existence of shear stress in the thick cylindrical shell with variable thickness, the equations governing disk layers are obtained based on first-order shear deformation theory (FSDT). These equations are in the form of a set of general differential equations. Given that the cylinder is divided into n disks, n sets of differential equations are obtained. The solution of this set of equations, applying the boundary conditions and continuity conditions between the layers, yields displacements and stresses. A numerical solution using finite element method (FEM) is also presented and good agreement was found.

A Semi-Analytical Solution for Elastic Analysis of Rotating Thick Cylindrical Shells with Variable Thickness Using Disk Form Multilayers

Directory of Open Access Journals (Sweden)

Mohammad Zamani Nejad

2014-01-01

Full Text Available Using disk form multilayers, a semi-analytical solution has been derived for determination of displacements and stresses in a rotating cylindrical shell with variable thickness under uniform pressure. The thick cylinder is divided into disk form layers form with their thickness corresponding to the thickness of the cylinder. Due to the existence of shear stress in the thick cylindrical shell with variable thickness, the equations governing disk layers are obtained based on first-order shear deformation theory (FSDT. These equations are in the form of a set of general differential equations. Given that the cylinder is divided into n disks, n sets of differential equations are obtained. The solution of this set of equations, applying the boundary conditions and continuity conditions between the layers, yields displacements and stresses. A numerical solution using finite element method (FEM is also presented and good agreement was found.

Analysis of Strain and Intermixing in a Single Layer Ge/Si dots using polarized Raman Spectroscopy

OpenAIRE

PEROVA, TANIA; MOORE, ROBERT

2006-01-01

PUBLISHED The built-in strain and composition of as-grown and Si-capped single layers of Ge?Si dots grown at various temperatures (460?800 ?C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-induced Si diffusion from the cap layer is occurring. For large dots grown at 700?800...

Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

Energy Technology Data Exchange (ETDEWEB)

Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

2012-01-31

The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

Vertical leaf mass per area gradient of mature sugar maple reflects both height-driven increases in vascular tissue and light-driven increases in palisade layer thickness.

Science.gov (United States)

Coble, Adam P; Cavaleri, Molly A

2017-10-01

A key trait used in canopy and ecosystem function modeling, leaf mass per area (LMA), is influenced by changes in both leaf thickness and leaf density (LMA = Thickness × Density). In tall trees, LMA is understood to increase with height through two primary mechanisms: (i) increasing palisade layer thickness (and thus leaf thickness) in response to light and/or (ii) reduced cell expansion and intercellular air space in response to hydrostatic constraints, leading to increased leaf density. Our objective was to investigate within-canopy gradients in leaf anatomical traits in order to understand environmental factors that influence leaf morphology in a sugar maple (Acer saccharum Marshall) forest canopy. We teased apart the effects of light and height on anatomical traits by sampling at exposed and closed canopies that had different light conditions at similar heights. As expected, palisade layer thickness responded strongly to cumulative light exposure. Mesophyll porosity, however, was weakly and negatively correlated with light and height (i.e., hydrostatic gradients). Reduced mesophyll porosity was not likely caused by limitations on cell expansion; in fact, epidermal cell width increased with height. Palisade layer thickness was better related to LMA, leaf density and leaf thickness than was mesophyll porosity. Vein diameter and fraction of vascular tissue also increased with height and LMA, density and thickness, revealing that greater investment in vascular and support tissue may be a third mechanism for increased LMA with height. Overall, decreasing mesophyll porosity with height was likely due to palisade cells expanding into the available air space and also greater investments in vascular and support tissue, rather than a reduction of cell expansion due to hydrostatic constraints. Our results provide evidence that light influences both palisade layer thickness and mesophyll porosity and indicate that hydrostatic gradients influence leaf vascular and support

High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics.

Science.gov (United States)

Chang, Ren-Jie; Tan, Haijie; Wang, Xiaochen; Porter, Benjamin; Chen, Tongxin; Sheng, Yuewen; Zhou, Yingqiu; Huang, Hefu; Bhaskaran, Harish; Warner, Jamie H

2018-04-18

Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS 2 :Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS 2 measurements in devices reveal a transition from the interface-dominated response for thin crystals to bulklike response for the thicker SnS 2 crystals, showing the sensitivity of devices fabricated using layered materials on the number of layers. These results show that SnS 2 has photosensing performance when combined with Gr electrodes that is comparable to other 2D transition metal dichalcogenides of MoS 2 and WS 2 .

Formation of thick stratiform Fe-Ti oxide layers in layered intrusion and frequent replenishment of fractionated mafic magma: Evidence from the Panzhihua intrusion, SW China

Science.gov (United States)

Song, Xie-Yan; Qi, Hua-Wen; Hu, Rui-Zhong; Chen, Lie-Meng; Yu, Song-Yue; Zhang, Jia-Fei

2013-03-01

Panzhihua intrusion is one of the largest layered intrusions that hosts huge stratiform Fe-Ti oxide layers in the central part of the Emeishan large igneous province, SW China. Up to 60 m thick stratiform massive Fe-Ti oxide layers containing 85 modal% of magnetite and ilmenite and overlying magnetite gabbro compose cyclic units of the Lower Zone of the intrusion. The cyclic units of the Middle Zone consist of magnetite gabbro and overlying gabbro. In these cyclic units, contents of Fe2O3(t), TiO2 and Cr and Fe3+/Ti4+ ratio of the rocks decrease upward, Cr content of magnetite and forsterite percentage of olivine decrease as well. The Upper Zone consists of apatite gabbro characterized by enrichment of incompatible elements (e.g., 12-18 ppm La, 20-28 ppm Y) and increasing of Fe3+/Ti4+ ratio (from 1.3 to 2.3) upward. These features indicate that the Panzhihua intrusion was repeatedly recharged by more primitive magma and evolved magmas had been extracted. Calculations using MELTS indicate that extensive fractionation of olivine and clinopyroxene in deep level resulted in increasing Fe and Ti contents in the magma. When these Fe-Ti-enriched magmas were emplaced along the base of the Panzhihua intrusion, Fe-Ti oxides became an early crystallization phase, leading to a residual magma of lower density. We propose that the unusually thick stratiform Fe-Ti oxide layers resulted from coupling of gravity settling and sorting of the crystallized Fe-Ti oxides from Fe-Ti-enriched magmas and frequent magma replenishment along the floor of the magma chamber.

Effect of Hydrograph Separation on Suspended Sediment Concentration Predictions in a Forested Headwater with Thick Soil and Weathered Gneiss Layers

Directory of Open Access Journals (Sweden)

Naoki Kabeya

2014-06-01

Full Text Available Two-component hydrograph separation using oxygen-18 concentrations was conducted at a sediment runoff observation weir installed in a small subcatchment of a forested gneiss catchment in Japan. The mean soil thickness of this catchment is 7.27 m, which comprises 3.29 m of brown forest soil (A and B layers and a 3.98-m layer of heavily weathered gneiss. Data were collected for a storm on 20–21 May 2003, and the percentage of event water separated by the stable isotope ratio in comparison with the total rainfall amount was about 1%. This value is within the ratio of a riparian zone in a drainage area. Temporal variation of suspended sediment concentration exhibited higher correlation with the event water component than with the total runoff or pre-event water component. This shows that the riparian zone causes rainwater to flow out quickly during a rain event, and that this is an important area of sediment production and transportation in a forested headwater with thick soil and weathered gneiss layers.

The effect of interfacial intermixing on magnetization and anomalous Hall effect in Co/Pd multilayers

KAUST Repository

Guo, Zaibing; Wang, Xianbin; Mi, W.

2015-01-01

on the temperature of rapid thermal annealing at 5 K is discussed. It is found that AHE is closely related to the relative thickness of the Co and Pd layers. Localized paramagnetism has been observed which destroys AHE, while AHE can be enhanced by annealing.

Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

KAUST Repository

Al-Jabr, Ahmad; Majid, Mohammed Abdul; Shen, Chao; Ng, Tien Khee; Ooi, Boon S.

2016-01-01

We increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing

Cranial vault thickness in primates: Homo erectus does not have uniquely thick vault bones.