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Sample records for intermediate voltage electron

  1. Intermediate state trapping of a voltage sensor

    DEFF Research Database (Denmark)

    Lacroix, Jérôme J; Pless, Stephan Alexander; Maragliano, Luca

    2012-01-01

    Voltage sensor domains (VSDs) regulate ion channels and enzymes by undergoing conformational changes depending on membrane electrical signals. The molecular mechanisms underlying the VSD transitions are not fully understood. Here, we show that some mutations of I241 in the S1 segment of the Shaker...... Kv channel positively shift the voltage dependence of the VSD movement and alter the functional coupling between VSD and pore domains. Among the I241 mutants, I241W immobilized the VSD movement during activation and deactivation, approximately halfway between the resting and active states......, and drastically shifted the voltage activation of the ionic conductance. This phenotype, which is consistent with a stabilization of an intermediate VSD conformation by the I241W mutation, was diminished by the charge-conserving R2K mutation but not by the charge-neutralizing R2Q mutation. Interestingly, most...

  2. Low voltage electron beam accelerators

    International Nuclear Information System (INIS)

    Ochi, Masafumi

    2003-01-01

    Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

  3. Low voltage electron beam accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Ochi, Masafumi [Iwasaki Electric Co., Ltd., Tokyo (Japan)

    2003-02-01

    Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

  4. Critical voltage effects in electron channeling patterns

    International Nuclear Information System (INIS)

    Farrow, R.C.

    1984-01-01

    Electron channeling patterns were used to study critical voltage effects in the metals molybdenum and tungsten. The purpose was to characterize both theoretically and experimentally how a critical voltage will affect the channeling pattern line shapes. The study focused on the second order critical voltage that results from the degeneracy between the Bloch wave states of the (110) and (220) reflections. Theoretical (110) series electron channeling pattern line profiles were calculated using the dynamical theory of Hirsch and Humphreys (1970). A 10 beam dynamical electron diffraction calculation was performed (using complex Fourier lattice potentials) to generate Bloch wave coefficients, excitation amplitudes, and absorption coefficients needed for determining backscattering coefficients and subsequent backscattered electron intensities. The theoretical model is applicable to electron diffraction at all energies since no high energy approximation or perturbation method was used

  5. Electron-atom scattering at intermediate energies

    International Nuclear Information System (INIS)

    Kingston, A.E.; Walters, H.R.J.

    1982-01-01

    The problems of intermediate energy scattering are approached from the low and high energy ends. At low intermediate energies difficulties associated with the use of pseudostates and correlation terms are discussed, special consideration being given to nonphysical pseudoresonances. Perturbation methods appropriate to high intermediate energies are described and attempts to extend these high energy approximations down to low intermediate energies are studied. It is shown how the importance of electron exchange effects develops with decreasing energy. The problem of assessing the 'effective completeness' of pseudostate sets at intermediate energies is mentioned and an instructive analysis of a 2p pseudostate approximation to elastic e - -H scattering is given. It is suggested that at low energies the Pauli Exclusion Principle can act to hide short range defects in pseudostate approximations. (author)

  6. Trusted intermediating agents in electronic trade networks

    NARCIS (Netherlands)

    T.B. Klos (Tomas); F. Alkemade (Floortje)

    2005-01-01

    htmlabstract Electronic commerce and trading of information goods significantly impact the role of intermediaries: consumers can bypass intermediating agents by forming direct links to producers. One reason that traditional intermediaries can still make a profit, is that they have more knowledge of

  7. Voltage-pulse generator for electron gun

    International Nuclear Information System (INIS)

    Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

    1987-01-01

    A voltage-pulse generator with combined capacitive and inductive storage devices of an electron gun is described. The current interrupter is a hydrogen thyratron (TGI1-100/8, TGI1-500/16, or TGI1-1000/25) installed in a short magnetic lens. The current interruption time of the thyratrons is 100-300 nsec. When the capacitive storage device is charged to 1 kV, a voltage pulse with an amplitude of 25 kV is obtained at the load

  8. Electronic voltage and current transformers testing device.

    Science.gov (United States)

    Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

    2012-01-01

    A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware.

  9. Electron scattering from sodium at intermediate energies

    International Nuclear Information System (INIS)

    Mitroy, J.; McCarthy, I.E.

    1986-10-01

    A comprehensive comparison is made between theoretical calculations and experimental data for intermediate energy (≥ 10 eV) electron scattering from sodium vapour. The theoretical predictions of coupled-channels calculations (including one, two or four channels) do not agree with experimental values of the differential cross sections for elastic scattering or the resonant 3s to 3p excitation. Increasingly-more-sophisticated calculations, incorporating electron correlations in the target states, and also including core-excited states in the close-coupling expansion, are done at a few selected energies in an attempt to isolate the cause of the discrepancies between theory and experiment. It is found that these more-sophisticated calculations give essentially the same results as the two- and four-channel calculations using Hartree-Fock wavefunctions. Comparison of the sodium high-energy elastic differential cross sections with those of neon suggests that the sodium differential cross section experiments may suffer from systematic errors. There is also disagreement, at the higher energies, between theoretical values for the scattering parameters and those that are derived from laser-excited superelastic scattering and electron photon coincidence experiments. When allowance is made for the finite acceptance angle of the electron spectrometers used in the experiments by convoluting the theory with a function representing the distribution of electrons entering the electron spectrometer it is found that the magnitudes of the differences between theory and experiment are reduced

  10. Modular low-voltage electron emitters

    International Nuclear Information System (INIS)

    Berejka, Anthony J.

    2005-01-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates

  11. Modular low-voltage electron emitters

    Science.gov (United States)

    Berejka, Anthony J.

    2005-12-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates.

  12. Modular low-voltage electron beams

    International Nuclear Information System (INIS)

    Berejka, A.J.; Avnery, Tovi; Carlson, Carl

    2004-01-01

    Modular, low-voltage systems have simplified electron beam (EB) technology for industrial uses and for research and development. Modular EB units are produced in quantity as sealed systems that are evacuated at the factory eliminating the need for vacuum pumps at the point of use. A simple plug-out--plug-in method of replacement eliminates downtime for servicing. Use of ultra-thin beam windows (<10 μm of titanium foil), solid-state 19 in. (48 cm) rack-mounted power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, combine for ease of use and electrical transfer efficiency at voltages that can be varied between 80 and 150 kV and with high beam currents (up to 40 mA across the 25 cm window). These electron systems are available in three widths, the standard 25 cm and new 5 and 40 cm beams. Traditional uses in the graphic arts and coatings areas as well as uses in surface sterilization have found these compact, lightweight (approximately 15 kg) modular beams of interest. Units have been configured around complex shapes to enable three-dimensional surface curing (as for coatings on aluminum tubing) to be achieved at high production rates. Details of the beam construction and some industrial uses are discussed

  13. Modular low-voltage electron beams

    Science.gov (United States)

    Berejka, Anthony J.; Avnery, Tovi; Carlson, Carl

    2004-09-01

    Modular, low-voltage systems have simplified electron beam (EB) technology for industrial uses and for research and development. Modular EB units are produced in quantity as sealed systems that are evacuated at the factory eliminating the need for vacuum pumps at the point of use. A simple plug-out—plug-in method of replacement eliminates downtime for servicing. Use of ultra-thin beam windows (innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, combine for ease of use and electrical transfer efficiency at voltages that can be varied between 80 and 150 kV and with high beam currents (up to 40 mA across the 25 cm window). These electron systems are available in three widths, the standard 25 cm and new 5 and 40 cm beams. Traditional uses in the graphic arts and coatings areas as well as uses in surface sterilization have found these compact, lightweight (approximately 15 kg) modular beams of interest. Units have been configured around complex shapes to enable three-dimensional surface curing (as for coatings on aluminum tubing) to be achieved at high production rates. Details of the beam construction and some industrial uses are discussed.

  14. 40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication

    NARCIS (Netherlands)

    Luttge, R.; Adam, D.; Burkhardt, F.; Hoke, F.; Schacke, H.; Schmidt, M.; Wolf, H.; Schmidt, A.

    1999-01-01

    High precision LIGA masks require a soft X-ray pattern transfer from intermediate masks by means of electron beam lithography. Such a process has been realized using an upgraded Leica ZBA 23 machine with an acceleration voltage of 40 kV. Three process variations of the developer system, so called GG

  15. High-voltage pulse generator for electron gun power supply

    International Nuclear Information System (INIS)

    Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

    1987-01-01

    High-voltage pulse generator with combined capacitive and inductive energy storages for electron gun power supply is described. Hydrogen thyratron set in a short magnetic lense is a current breaker. Times of current interruption in thyratrons are in the range from 100 to 300 ns. With 1 kV charging voltage of capacitive energy storage 25 kV voltage pulse is obtained in the load. The given high-voltage pulse generator was used for supply of an electron gun generating 10-30 keV low-energy electron beam

  16. Wearable electronics formed on intermediate layer on textiles

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-07-27

    One manner of producing more desirable clothing with electronic capabilities is to manufacture electronics, such as the charging wires or devices themselves, directly onto the textile materials. Textile materials generally do not support the manufacturing of electronic devices, in part because the surface of the textile is too rough for electronic devices or the processes used to manufacturing electronic devices. An intermediate layer (204) may be placed on the textile material (202) to reduce the roughness of the surface of the textile material and provide other beneficial characteristics for the placement of electronic devices (206) directly on the textile material.

  17. Inductive voltage adder (IVA) for submillimeter radius electron beam

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poukey, J.W.; Maenchen, J.E.

    1996-01-01

    The authors have already demonstrated the utility of inductive voltage adder accelerators for production of small-size electron beams. In this approach, the inductive voltage adder drives a magnetically immersed foilless diode to produce high-energy (10--20 MeV), high-brightness pencil electron beams. This concept was first demonstrated with the successful experiments which converted the linear induction accelerator RADLAC II into an IVA fitted with a small 1-cm radius cathode magnetically immersed foilless diode (RADLAC II/SMILE). They present here first validations of extending this idea to mm-scale electron beams using the SABRE and HERMES-III inductive voltage adders as test beds. The SABRE experiments are already completed and have produced 30-kA, 9-MeV electron beams with envelope diameter of 1.5-mm FWHM. The HERMES-III experiments are currently underway

  18. On some aspects of high voltage electron microscopy

    International Nuclear Information System (INIS)

    Jouffrey, B.; Trinquier, J.

    1987-01-01

    The present paper deals with high voltage electron microscopy (HVEM). It is an overview on this domain due to the pionneer work of G. Dupouy which has permitted to perform a new kind of electron microscopy. Since this time, HVEM has shown its interest in high resolution, irradiations, chemical analysis, in situ experiments

  19. Electron beam generation in high voltage glow discharges

    International Nuclear Information System (INIS)

    Rocca, J.J.; Szapiro, B.; Murray, C.

    1989-01-01

    The generation of intense CW and pulsed electron beams in glow discharges in reviewed. Glow discharge electron guns operate at a pressure of the order of 1 Torr and often have an advantage in applications that require a broad area electron beam in a gaseous atmosphere, such as laser excitation and some aspects of materials processing. Aspects of electron gun design are covered. Diagnostics of the high voltage glow discharges including the electric field distribution mapped by Doppler free laser spectroscopy, and plasma density and electron temperature measurements of the electron yield of different cathode materials under glow discharge conditions are presented

  20. Current-Voltage Characteristic of Nanosecond - Duration Relativistic Electron Beam

    Science.gov (United States)

    Andreev, Andrey

    2005-10-01

    The pulsed electron-beam accelerator SINUS-6 was used to measure current-voltage characteristic of nanosecond-duration thin annular relativistic electron beam accelerated in vacuum along axis of a smooth uniform metal tube immersed into strong axial magnetic field. Results of these measurements as well as results of computer simulations performed using 3D MAGIC code show that the electron-beam current dependence on the accelerating voltage at the front of the nanosecond-duration pulse is different from the analogical dependence at the flat part of the pulse. In the steady-state (flat) part of the pulse), the measured electron-beam current is close to Fedosov current [1], which is governed by the conservation law of an electron moment flow for any constant voltage. In the non steady-state part (front) of the pulse, the electron-beam current is higher that the appropriate, for a giving voltage, steady-state (Fedosov) current. [1] A. I. Fedosov, E. A. Litvinov, S. Ya. Belomytsev, and S. P. Bugaev, ``Characteristics of electron beam formed in diodes with magnetic insulation,'' Soviet Physics Journal (A translation of Izvestiya VUZ. Fizika), vol. 20, no. 10, October 1977 (April 20, 1978), pp.1367-1368.

  1. Charged particle transport in gaseous nitrogen at intermediate E/N using the voltage transient method

    International Nuclear Information System (INIS)

    Purdie, P.H.; Fletcher, J.

    1992-01-01

    A pulsed swarm of charged particles crossing an inter-electrode gap under the influence of an applied electric field E will produce a pulsed current in the external circuit which, when integrated over time, will result in a transient voltage pulse, the shape and magnitude of which is characteristic of the number of type of charged particles. This voltage transient technique has been used to investigate a gas discharge in nitrogen gas at values of E/N (the ratio of applied electric field to gas number density), such that ionization is non-negligible. The voltage transients have been subjected to a theoretical analysis, which has previously been reported, which includes not only cathode and anode image terms but also both electron and ion diffusion terms. Electron transport parameters are reported for E/N ≤ 350 Td (1 Td = 10 -17 V cm 2 ). Data are also obtained for the drift velocities and diffusion coefficients of the ions operative within the nitrogen discharge. An estimate is obtained for the collisional decay rate of N 2 + . 21 refs., 7 figs

  2. Electron emission in collisions of intermediate energy ions with atoms

    International Nuclear Information System (INIS)

    Garibotti, C.R.

    1988-01-01

    The aim of this work, is the analysis of the processes of electronic emission produced in the collisions of small ions (H + , He ++ ) of intermediate energy (50 a 200 KeV/amu) with light gaseous targets. (A.C.A.G.) [pt

  3. Characterization of a low-voltage electron beam

    International Nuclear Information System (INIS)

    Berejka, A.J.

    2004-01-01

    Growing interests in low-voltage electron beam (EB) processing in areas that may require regulatory compliance, such as the curing of inks and coatings for food packaging materials and in the surface disinfection of medicinal and food containers, lead to the characterization of a low-voltage EB by two methods: a widely used thin radiochromic film and a film strip made on a continuous basis with an alanine coating. Using a laboratory unit, beam currents and voltages were varied and then optical density and alanine/matrix ratios were, respectively, determined. No inferences as to 'dose' were made. The radiochromic film was found to be insensitive to slight changes at low beam currents and to show considerable divergence and a broadening in response as current was increased across a meaningful range at the three applied beam voltages of 80, 100 and 120 kV. The electron paramagnetic resonance (EPR) increase in response of the alanine coated film taken as a ratio to an internal reference material within the test instrument itself was shown to have a linear response with respect to beam current and no divergence as current increased. The use of an alanine coating of thickness greater than that of the extrapolated range of the electron penetration offers a method for the characterization of the output of such very low-voltage beams

  4. Choice of operating voltage for a transmission electron microscope

    International Nuclear Information System (INIS)

    Egerton, R.F.

    2014-01-01

    An accelerating voltage of 100–300 kV remains a good choice for the majority of TEM or STEM specimens, avoiding the expense of high-voltage microscopy but providing the possibility of atomic resolution even in the absence of lens-aberration correction. For specimens thicker than a few tens of nm, the image intensity and scattering contrast are likely to be higher than at lower voltage, as is the visibility of ionization edges below 1000 eV (as required for EELS elemental analysis). In thick (>100 nm) specimens, higher voltage ensures less beam broadening and better spatial resolution for STEM imaging and EDX spectroscopy. Low-voltage (e.g. 30 kV) TEM or STEM is attractive for a very thin (e.g. 10 nm) specimen, as it provides higher scattering contrast and fewer problems for valence-excitation EELS. Specimens that are immune to radiolysis suffer knock-on damage at high current densities, and this form of radiation damage can be reduced or avoided by choosing a low accelerating voltage. Low-voltage STEM with an aberration-corrected objective lens (together with a high-angle dark-field detector and/or EELS) offers atomic resolution and elemental identification from very thin specimens. Conventional TEM can provide atomic resolution in low-voltage phase-contrast images but requires correction of chromatic aberration and preferably an electron-beam monochromator. Many non-conducting (e.g. organic) specimens damage easily by radiolysis and radiation damage then determines the TEM image resolution. For bright-field scattering contrast, low kV can provide slightly better dose-limited resolution if the specimen is very thin (a few nm) but considerably better resolution is possible from a thicker specimen, for which higher kV is required. Use of a phase plate in a conventional TEM offers the most dose-efficient way of achieving atomic resolution from beam-sensitive specimens. - Highlights: • 100–300 kV accelerating voltage is suitable for TEM specimens of typical

  5. High voltage high brightness electron accelerator with MITL voltage adder coupled to foilless diode

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poulkey, J.W.; Rovang, D.

    1995-01-01

    The design and analysis of a high brightness electron beam experiment under construction at Sandia National Laboratory is presented. The beam energy is 12 MeV, the current 35-40 kA, the rms radius 0.5 mm, and the pulse duration FWHM 40 ns. The accelerator is SABRE a pulsed inductive voltage adder, and the electron source is a magnetically immersed foilless diode. This experiment has as its goal to stretch the technology to the edge and produce the highest possible electron current in a submillimeter radius beam

  6. High voltage high brightness electron accelerators with MITL voltage adder coupled to foilless diodes

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poukey, J.W.; Frost, C.A.; Shope, S.L.; Halbleib, J.A.; Turman, B.N.

    1993-01-01

    During the last ten years the authors have extensively studied the physics and operation of magnetically-immersed electron foilless diodes. Most of these sources were utilized as injectors to high current, high energy linear induction accelerators such as those of the RADLAC family. Recently they have experimentally and theoretically demonstrated that foilless diodes can be successfully coupled to self-magnetically insulated transmission line voltage adders to produce very small high brightness, high definition (no halo) electron beams. The RADLAC/SMILE experience opened the path to a new approach in high brightness, high energy induction accelerators. There is no beam drifting through the device. The voltage addition occurs in a center conductor, and the beam is created at the high voltage end in an applied magnetic field diode. This work was motivated by the remarkable success of the HERMES-III accelerator and the need to produce small radius, high energy, high current electron beams for air propagation studies and flash x-ray radiography. In this paper they present experimental results compared with analytical and numerical simulations in addition to design examples of devices that can produce multikiloamp electron beams of as high as 100 MV energies and radii as small as 1 mm

  7. Symmetric low-voltage powering system for relativistic electronic devices

    International Nuclear Information System (INIS)

    Agafonov, A.V.; Lebedev, A.N.; Krastelev, E.G.

    2005-01-01

    A special driver for double-sided powering of relativistic magnetrons and several methods of localized electron flow forming in the interaction region of relativistic magnetrons are proposed and discussed. Two experimental installations are presented and discussed. One of them is designed for laboratory research and demonstration experiments at a rather low voltage. The other one is a prototype of a full-scale installation for an experimental research at relativistic levels of voltages on the microwave generation in the new integrated system consisting of a relativistic magnetron and symmetrical induction driver

  8. Electronic Current Transducer (ECT) for high voltage dc lines

    Science.gov (United States)

    Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

    1980-02-01

    The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

  9. Electron microscopic analysis of rotavirus assembly-replication intermediates

    International Nuclear Information System (INIS)

    Boudreaux, Crystal E.; Kelly, Deborah F.; McDonald, Sarah M.

    2015-01-01

    Rotaviruses (RVs) replicate their segmented, double-stranded RNA genomes in tandem with early virion assembly. In this study, we sought to gain insight into the ultrastructure of RV assembly-replication intermediates (RIs) using transmission electron microscopy (EM). Specifically, we examined a replicase-competent, subcellular fraction that contains all known RV RIs. Three never-before-seen complexes were visualized in this fraction. Using in vitro reconstitution, we showed that ~15-nm doughnut-shaped proteins in strings were nonstructural protein 2 (NSP2) bound to viral RNA transcripts. Moreover, using immunoaffinity-capture EM, we revealed that ~20-nm pebble-shaped complexes contain the viral RNA polymerase (VP1) and RNA capping enzyme (VP3). Finally, using a gel purification method, we demonstrated that ~30–70-nm electron-dense, particle-shaped complexes represent replicase-competent core RIs, containing VP1, VP3, and NSP2 as well as capsid proteins VP2 and VP6. The results of this study raise new questions about the interactions among viral proteins and RNA during the concerted assembly–replicase process. - Highlights: • Rotaviruses replicate their genomes in tandem with early virion assembly. • Little is known about rotavirus assembly-replication intermediates. • Assembly-replication intermediates were imaged using electron microscopy

  10. Electron microscopic analysis of rotavirus assembly-replication intermediates

    Energy Technology Data Exchange (ETDEWEB)

    Boudreaux, Crystal E.; Kelly, Deborah F. [Virginia Tech Carilion School of Medicine and Research Institute, Roanoke, VA (United States); McDonald, Sarah M., E-mail: mcdonaldsa@vtc.vt.edu [Virginia Tech Carilion School of Medicine and Research Institute, Roanoke, VA (United States); Department of Biomedical Sciences and Pathobiology, Virginia—Maryland Regional College of Veterinary Medicine, Blacksburg, VA (United States)

    2015-03-15

    Rotaviruses (RVs) replicate their segmented, double-stranded RNA genomes in tandem with early virion assembly. In this study, we sought to gain insight into the ultrastructure of RV assembly-replication intermediates (RIs) using transmission electron microscopy (EM). Specifically, we examined a replicase-competent, subcellular fraction that contains all known RV RIs. Three never-before-seen complexes were visualized in this fraction. Using in vitro reconstitution, we showed that ~15-nm doughnut-shaped proteins in strings were nonstructural protein 2 (NSP2) bound to viral RNA transcripts. Moreover, using immunoaffinity-capture EM, we revealed that ~20-nm pebble-shaped complexes contain the viral RNA polymerase (VP1) and RNA capping enzyme (VP3). Finally, using a gel purification method, we demonstrated that ~30–70-nm electron-dense, particle-shaped complexes represent replicase-competent core RIs, containing VP1, VP3, and NSP2 as well as capsid proteins VP2 and VP6. The results of this study raise new questions about the interactions among viral proteins and RNA during the concerted assembly–replicase process. - Highlights: • Rotaviruses replicate their genomes in tandem with early virion assembly. • Little is known about rotavirus assembly-replication intermediates. • Assembly-replication intermediates were imaged using electron microscopy.

  11. Low voltage 80 KV to 125 KV electron processors

    International Nuclear Information System (INIS)

    Lauppi, U.V.

    1999-01-01

    The classic electron beam technology made use of accelerating energies in the voltage range of 300 to 800 kV. The first EB processors - built for the curing of coatings - operated at 300 kV. The products to be treated were thicker than a simple layer of coating with thicknesses up to 100g and more. It was only in the beginning of the 1970's that industrial EB processors with accelerating voltages below 300 kV appeared on the market. Our company developed the first commercial electron accelerator without a beam scanner. The new EB machine featured a linear cathode, emitting a shower or 'curtain' of electrons over the full width of the product. These units were much smaller than anv previous EB processors and dedicated to the curing of coatings and other thin layers. ESI's first EB units operated with accelerating voltages between 150 and 200 kV. In 1993 ESI announced the introduction of a new generation of Electrocure. EB processors operating at 120 kV, and in 1998, at the RadTech North America '98 Conference in Chicago, the introduction of an 80 kV electron beam processor under the designation Microbeam LV

  12. BANSHEE: High-voltage repetitively pulsed electron-beam driver

    International Nuclear Information System (INIS)

    VanHaaften, F.

    1992-01-01

    BANSHEE (Beam Accelerator for a New Source of High-Energy Electrons) this is a high-voltage modulator is used to produce a high-current relativistic electron beam for high-power microwave tube development. The goal of the BANSHEE research is first to achieve a voltage pulse of 700--750 kV with a 1-μs pulse width driving a load of ∼100 Ω, the pulse repetition frequency (PRF) of a few hertz. The ensuing goal is to increase the pulse amplitude to a level approaching 1 MV. We conducted tests using half the modulator with an output load of 200 Ω, up to a level of ∼650 kV at a PRF of 1 Hz and 525 kV at a PRF of 5 Hz. We then conducted additional testing using the complete system driving a load of ∼100 Ω

  13. Innovative energy efficient low-voltage electron beam emitters

    International Nuclear Information System (INIS)

    Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

    2002-01-01

    Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates

  14. Innovative energy efficient low-voltage electron beam emitters

    Science.gov (United States)

    Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

    2002-03-01

    Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates.

  15. Evolution of graphene nanoribbons under low-voltage electron irradiation

    KAUST Repository

    Zhu, Wenpeng

    2012-01-01

    Though the all-semiconducting nature of ultrathin graphene nanoribbons (GNRs) has been demonstrated in field-effect transistors operated at room temperature with ∼105 on-off current ratios, the borderline for the potential of GNRs is still untouched. There remains a great challenge in fabricating even thinner GNRs with precise width, known edge configurations and specified crystallographic orientations. Unparalleled to other methods, low-voltage electron irradiation leads to a continuous reduction in width to a sub-nanometer range until the occurrence of structural instability. The underlying mechanisms have been investigated by the molecular dynamics method herein, combined with in situ aberration-corrected transmission electron microscopy and density functional theory calculations. The structural evolution reveals that the zigzag edges are dynamically more stable than the chiral ones. Preferential bond breaking induces atomic rings and dangling bonds as the initial defects. The defects grow, combine and reconstruct to complex edge structures. Dynamic recovery is enhanced by thermal activation, especially in cooperation with electron irradiation. Roughness develops under irradiation and reaches a plateau less than 1 nm for all edge configurations after longtime exposure. These features render low-voltage electron irradiation an attractive technique in the fabrication of ultrathin GNRs for exploring the ultimate electronic properties. © 2012 The Royal Society of Chemistry.

  16. High voltage processing of the SLC polarized electron gun

    International Nuclear Information System (INIS)

    Saez, P.; Clendenin, J.; Garden, C.; Hoyt, E.; Klaisner, L.; Prescott, C.; Schultz, D.; Tang, H.

    1993-04-01

    The SLC polarized electron gun operates at 120 kV with very low dark current to maintain the ultra high vacuum (UHV). This strict requirement protects the extremely sensitive photocathode from contaminants caused by high voltage (HV) activity. Thorough HV processing is thus required x-ray sensitive photographic film, a nanoammeter in series with gun power supply, a radiation meter, a sensitive residual gas analyzer and surface x-ray spectrometry were used to study areas in the gun where HV activity occurred. By reducing the electric field gradients, carefully preparing the HV surfaces and adhering to very strict clean assembly procedures, we found it possible to process the gun so as to reduce both the dark current at operating voltage and the probability of HV discharge. These HV preparation and processing techniques are described

  17. On selection rules and inelastic electron scattering at intermediate energies

    International Nuclear Information System (INIS)

    Nuroh, K.

    1986-12-01

    Correlation effects are included in the Bethe-Born theory for the generalized oscillator strength of inelastic scattering of electrons on atoms. The formulation is such as to allow for the calculation of relative line strengths of multiplets. It is used to analyze line strengths of the 4d → 4f transition in La 3+ and Ce 4+ within LS-coupling. The analysis indicates that only singlet states of the intermediate 4d 9 4f configuration are allowed. Calculated line strengths are compared with a recent core electron energy loss spectra of metallic La and tetravalent CeO 2 and there is an overall qualitative agreement between theory and experiment. (author). 11 refs, 4 figs, 2 tabs

  18. Electronic emission produced by light projectiles at intermediate energies

    International Nuclear Information System (INIS)

    Bernardi, G.C.

    1989-01-01

    Two aspects of the electronic emission produced by light projectiles of intermediate energies have been studied experimentally. In the first place, measurements of angular distributions in the range from θ = 0 deg -50 deg induced by collisions of 50-200 keV H + incident on He have been realized. It was found that the double differential cross section of electron emission presents a structure focussed in the forward direction and which extends up to relatively large angles. Secondly, the dependence of the double differential cross section on the projectile charge was studied using H + and He 3 2+ projectiles of 50 and 100 keV/amu incident on He. Strong deviations from a constant scaling factor were found for increasing projectile charge. The double differential cross sections and the single differential cross sections as a function of the emission angle, and the ratios of the emissions induced by He 3 2+ and H + at equal incident projectile velocities are compared with the 'Continuum Distorted Wave-Eikonal Initial State' (CDW-EIS) approximation and the 'Classical Trajectory Monte Carlo' (CTMC) method. Both approximations, in which the potential of the projectile exercises a relevant role, reproduce the general aspects of the experimental results. An electron analyzer and the corresponding projectile beam line has been designed and installed; it is characterized by a series of properties which are particularly appropriate for the study of double differential electronic emission in gaseous as well as solid targets. The design permits to assure the conditions to obtain a well localized gaseous target and avoid instrumental distortions of the measured distributions. (Author) [es

  19. Ultrahigh Voltage Electron Microscopy Links Neuroanatomy and Neuroscience/Neuroendocrinology

    Directory of Open Access Journals (Sweden)

    Hirotaka Sakamoto

    2012-01-01

    Full Text Available The three-dimensional (3D analysis of anatomical ultrastructures is extremely important in most fields of biological research. Although it is very difficult to perform 3D image analysis on exact serial sets of ultrathin sections, 3D reconstruction from serial ultrathin sections can generally be used to obtain 3D information. However, this technique can only be applied to small areas of a specimen because of technical and physical difficulties. We used ultrahigh voltage electron microscopy (UHVEM to overcome these difficulties and to study the chemical neuroanatomy of 3D ultrastructures. This methodology, which links UHVEM and light microscopy, is a useful and powerful tool for studying molecular and/or chemical neuroanatomy at the ultrastructural level.

  20. Simulation of electron displacement damage in a high voltage electron microscope

    International Nuclear Information System (INIS)

    Ono, Susumu; Kanaya, Koichi

    1979-01-01

    By applying the fundamental theory of the neutron cooling to the conservation law of energy and momentum, the threshold energies of incident electrons for displacing atoms are calculated and illustrated periodically for the atomic number. And the observable damage due to the secondary action of displaced atoms in the practical use of a high voltage electron microscope is described for several materials and accelerating voltages. The trajectories of incident electrons and displaced atoms in several materials are simulated by a Monte-Carlo method, using rigorous formulas of electron scattering events, i.e. elastic and inelastic scattering cross-sections, ionization loss and plasmon excitation. The simulation results are substantially agreement with experiments. (author)

  1. An inverted-geometry, high voltage polarized electron gun with UHV load lock

    International Nuclear Information System (INIS)

    Breidenbach, M.; Foss, M.; Hodgson, J.; Kulikov, A.; Odian, A.; Putallaz, G.; Rogers, H.; Schindler, R.; Skarpaas, K.; Zolotorev, M.

    1994-01-01

    The design of a high voltage electron source with a GaAs photocathode and a load lock system is described. The inverted high voltage structure of the gun permits a compact and simple design. Test results demonstrate that the load lock system provides a reliable way to achieve high quantum efficiency of the photocathode in a high voltage device. ((orig.))

  2. Development of high voltage lead wires using electron beam irradiation

    International Nuclear Information System (INIS)

    Bae Hunjai; Sohn Hosoung; Choi Dongjung

    1995-01-01

    It is known to those skilled to the art that the electric wires used in high voltage operating electric equipments such as TV sets, microwave ovens, duplicators and etc., have such a structure that a conductor is coated with an insulating layer which is encapsulated with a protecting jacket layer. The electric wire specification such as UL and CSA requires superior cut-through property and flame-retardant property of the wire for utilization safety. The cut-through property of insulation material, for example, high density polyethylene, can be increased by crosslinking of the polymer. Also the flame-retardant property of jacket material which protects the flammable inner insulation can be raised by flame-retardant formulating of the material. In the wire and cable industry, crosslinking by electron beam processing is more effective than that by chemical processing in the viewpoint of through-put rate of the products. The jacket layer of the wire plays the role of protecting the insulation material from burning. The protecting ability of the jacket is related to its inherent flammability and formability of swollen carbonated layer when burned. Crosslinking of the material gives a good formability of swollen carbonated layer, and it protects the insulation material from direct flame. In formulating the flame-retardant jacket material, a crosslinking system must be considered with base polymers and other flame-retardant additives. (Author)

  3. Development of high voltage lead wires using electron beam irradiation

    International Nuclear Information System (INIS)

    Bae Hunjai; Sohn Hosoung; Choi Dongjung

    1995-01-01

    It is known to those skilled to the art that the electric wires used in high voltage operating electric equipment such as TV sets, microwave ovens, duplicators etc., have such a structure that a conductor is coated with an insulating layer which is encapsulated with a protecting jacket layer. The electric wire specification such as UL and CSA requires superior cut-through and flame-retardant property of the wire for utilization safety. The cut-through property of insulation material, for example, high density polyethylene, can be increased by crosslinking of the polymer. Also the flame-retardant property of jacket material which protects the flammable inner insulation can be raised by flame-retardant formulating of the material. In the wire and cable industry, crosslinking by electron beam processing is more effective than that by chemical processing in the viewpoint of through-put rate of the products. The jacket layer of the wire plays the role of protecting the insulation material from burning. The protecting ability of the jacket is related to its inherent flammability and formability of swollen carbonated layer when burned. Crosslinking of the material gives a good formability of swollen carbonated layer, and it protects the insulation material from direct flame. In formulating the flame-retardant jacket material, a crosslinking system must be considered with base polymers and other flame-retardant additives. (Author)

  4. Electron-beam-induced-current and active secondary-electron voltage-contrast with aberration-corrected electron probes

    Energy Technology Data Exchange (ETDEWEB)

    Han, Myung-Geun, E-mail: mghan@bnl.gov [Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, NY 11973 (United States); Garlow, Joseph A. [Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, NY 11973 (United States); Materials Science and Engineering Department, Stony Brook University, Stony Brook, NY 11794 (United States); Marshall, Matthew S.J.; Tiano, Amanda L. [Department of Chemistry, Stony Brook University, Stony Brook, NY 11974 (United States); Wong, Stanislaus S. [Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, NY 11973 (United States); Department of Chemistry, Stony Brook University, Stony Brook, NY 11974 (United States); Cheong, Sang-Wook [Department of Physics and Astronomy, Rutgers Center for Emergent Materials, Rutgers University, Piscataway, NJ 08854 (United States); Walker, Frederick J.; Ahn, Charles H. [Department of Applied Physics and Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06520 (United States); Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06520 (United States); Zhu, Yimei [Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, NY 11973 (United States)

    2017-05-15

    Highlights: • Electron-beam-induced-current (EBIC) and active secondary-electron voltage-contrast (SE-VC) are demonstrated in STEM mode combined with in situ electrical biasing in a TEM. • Electrostatic potential maps in ferroelectric thin films, multiferroic nanowires, and single crystals obtained by off-axis electron holography were compared with EBIC and SE-VC data. • Simultaneous EBIC and active SE-VC performed with atomic resolution STEM are demonstrated. - Abstract: The ability to map out electrostatic potentials in materials is critical for the development and the design of nanoscale electronic and spintronic devices in modern industry. Electron holography has been an important tool for revealing electric and magnetic field distributions in microelectronics and magnetic-based memory devices, however, its utility is hindered by several practical constraints, such as charging artifacts and limitations in sensitivity and in field of view. In this article, we report electron-beam-induced-current (EBIC) and secondary-electron voltage-contrast (SE-VC) with an aberration-corrected electron probe in a transmission electron microscope (TEM), as complementary techniques to electron holography, to measure electric fields and surface potentials, respectively. These two techniques were applied to ferroelectric thin films, multiferroic nanowires, and single crystals. Electrostatic potential maps obtained by off-axis electron holography were compared with EBIC and SE-VC to show that these techniques can be used as a complementary approach to validate quantitative results obtained from electron holography analysis.

  5. Particle flows to shape and voltage surface discontinuities in the electron sheath surrounding a high voltage solar array in LEO

    Science.gov (United States)

    Metz, Roger N.

    1991-01-01

    This paper discusses the numerical modeling of electron flows from the sheath surrounding high positively biased objects in LEO (Low Earth Orbit) to regions of voltage or shape discontinuity on the biased surfaces. The sheath equations are derived from the Two-fluid, Warm Plasma Model. An equipotential corner and a plane containing strips of alternating voltage bias are treated in two dimensions. A self-consistent field solution of the sheath equations is outlined and is pursued through one cycle. The electron density field is determined by numerical solution of Poisson's equation for the electrostatic potential in the sheath using the NASCAP-LEO relation between electrostatic potential and charge density. Electron flows are calculated numerically from the electron continuity equation. Magnetic field effects are not treated.

  6. Wearable electronics formed on intermediate layer on textiles

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-01-01

    One manner of producing more desirable clothing with electronic capabilities is to manufacture electronics, such as the charging wires or devices themselves, directly onto the textile materials. Textile materials generally do not support

  7. Electron scattering from nucleons and deuterons at intermediate energies

    International Nuclear Information System (INIS)

    Burkert, V.

    1985-04-01

    Recent results from electron scattering of nucleons and deuterons are discussed. A tentative physics program for ELSA employing the polarized electron beams as well as the polarized nucleon and deuteron target facilities is outlined. (orig.)

  8. On FEL integral equation and electron energy loss in intermediate gain regime

    International Nuclear Information System (INIS)

    Takao, Masaru

    1994-03-01

    The FEL pendulum equation in a intermediate gain small signal regime is investigated. By calculating the energy loss of the electron beam in terms of the solution of the pendulum equation, we confirm the consistency of the FEL equation in intermediate gain regime. (author)

  9. Accurate determination of the voltage of a transmission electron ...

    Indian Academy of Sciences (India)

    The techniques established are found to be suitable for TEMs operating at a setting voltage of about 250 kV. For the TEM studies, a regular double-tilt specimen holder is required in order to be able to get to the desired zone axes. When the experiments were repeated using a cryogenic double-tilt holder, an improvement in ...

  10. Electron capture in ion-molecule collisions at intermediate energy

    International Nuclear Information System (INIS)

    Kumura, M.

    1986-01-01

    Recent progress of theoretical charge transfer study in ion-molecule collisions at the intermediate energy is reviewed. Concept of close and distant collisions obtained from extensive ion-atom collision studies is identified so that it can be utilized to model two distinct collision processes. For a close collision, explicit representation of the whole collision complex is necessary to describe collision dynamics correctly, while a model potential approach for molecule is appropriate for a distant collision. It is shown that these two distinct models are indeed capable of reproducing experimental charge transfer cross sections. Some remarks for further theoretical study of ion-molecule collisions are also given. 21 refs., 8 figs

  11. The electron-electron instability in a spherical plasma structure with an intermediate double layer

    International Nuclear Information System (INIS)

    Lapuerta, V.; Ahedo, E.

    2003-01-01

    A linear dynamic model of a spherical plasma structure with an intermediate double layer is analyzed in the high-frequency range. The two ion populations tend to stay frozen in their stationary response and this prevents the displacement of the double layer. Different electron modes dominate the plasma dynamics in each quasineutral region. The electrostatic potential and the electron current are the magnitudes most perturbed. The structure develops a reactive electron-electron instability, which is made up of a countable family of eigenmodes. Space-charge effects must be included in the quasineutral regions to determine the eigenmode carrying the maximum growth rate. Except for very small Debye lengths, the fundamental eigenmode governs the instability. The growth rate for the higher harmonics approaches that of an infinite plasma. The instability modes develop mainly on the plasma at the high-potential side of the double layer. The influence of the parameters defining the stationary solution on the instability growth rate is investigated, and the parametric regions of stability are found. The comparison with a couple of experiments on plasma contactors is satisfactory

  12. Use of high voltage electron microscope to simulate radiation damage by neutrons

    International Nuclear Information System (INIS)

    Mayer, R.M.

    1976-01-01

    The use of the high voltage electron microscope to simulate radiation damage by neutrons is briefly reviewed. This information is important in explaining how alloying affects void formation during neutron irradiation

  13. HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.ELECTRON BEAM TECHNOLOGY - INNOVATIVE TECHNOLOGY EVALUATION REPORT

    Science.gov (United States)

    This report evaluates a high-voltage electron beam (E-beam) technology's ability to destroy volatile organic compounds (VOCs) and other contaminants present in liquid wastes. Specifically, this report discusses performance and economic data from a Superfund Innovative Technology...

  14. Comparison of three-phase three-level voltage source inverter with intermediate dc–dc boost converter and quasi-Z-source inverter

    DEFF Research Database (Denmark)

    Panfilov, Dmitry; Husev, Oleksandr; Blaabjerg, Frede

    2016-01-01

    This study compares a three-phase three-level voltage source inverter with an intermediate dc-dc boost converter and a quasi-Z-source inverter in terms of passive elements values and dimensions, semiconductor stresses, and overall efficiency. A comparative analysis was conducted with relative...

  15. DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

    Science.gov (United States)

    The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

  16. Void formation in NiTi shape memory alloys by medium-voltage electron irradiation

    International Nuclear Information System (INIS)

    Schlossmacher, P.; Stober, T.

    1995-01-01

    In-situ electron irradiation experiments of NiTi shape memory alloys, using high-voltage transmission electron microscopes, result in amorphization of the intermetallic compound. In all of these experiments high-voltages more than 1.0 MeV had to be applied in order to induce the crystalline-to-amorphous transformation. To their knowledge no irradiation effects of medium-voltage electrons of e.g. 0.5 MeV have been reported in the literature. In this contribution, the authors describe void formation in two different NiTi shape memory alloys, resulting from in-situ electron irradiation, using a 300 kV electron beam in a transmission electron microscope. First evidence is presented that void formation is correlated with the total oxygen content of the alloys

  17. Intermediate energy electron scattering from sodium and potassium

    International Nuclear Information System (INIS)

    Buckman, S.J.

    1979-06-01

    This thesis describes an experimental investigation of the interaction of fast electrons with alkali metal atoms. Several of the theoretical models which have been applied to atomic collision processes including the first Born approximation, the Glauber approximation, the optical model and the distorted wave polarized orbital approximation are discussed. The theory of electron-photon coincidence experiments is outlined and the effects of fine and hyperfine structure on the polarization state of photons emitted from an excited atom are calculated for Sodium. The results of elastic scattering measurements on Sodium and Potassium are presented and used to test several theoretical models in their description of the differential cross section at incident energies between 50 and 200eV. Absolute differential and integrated total cross sections for the Potassium resonance lines and Sodium D-lines are presented. Results of the first electron-polarized photon coincidence experiment on the Sodium D-lines are presented and compared with available theoretical calculations

  18. Stern-Gerlach experiment, electron spin and intermediate quantum mechanics

    Energy Technology Data Exchange (ETDEWEB)

    Mackintosh, A.R. (Copenhagen Univ. (Denmark). H.C. Oersted Inst.)

    1983-01-01

    The paper deals with the theory of electron spin. The Stern-Gerlach experiment, the anticommutation relations and the properties of spin operators are discussed. The Pauli theory, Dirac transformation theory, the double Stern-Gerlach experiment, the EPR paradox and Bell's inequality are also covered.

  19. Current voltage perspective of an organic electronic device

    Science.gov (United States)

    Mukherjee, Ayash K.; Kumari, Nikita

    2018-05-01

    Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

  20. Automotive Electrical and Electronic System II; Automotive Mechanics-Intermediate: 9045.04.

    Science.gov (United States)

    Dade County Public Schools, Miami, FL.

    This automotive electrical and electronic system course is an intermediate course designed for the student who has completed automotive Electrical and Electronic System I. The theory and principles of operation of the components of the starting and charging systems and other electrical accessory systems in the automobile will be learned by the…

  1. The new frontiers of electron scattering at intermediate energy

    International Nuclear Information System (INIS)

    Frois, B.

    1984-08-01

    Recent advances in experimental techniques have produced a new generation of electron scattering data. This paper explores the frontiers of this field and shows how our prospects for the future may be modified. Nuclear structure has been determined with an unprecedented accuracy defining clearly the limits of the most advanced theoretical descriptions. Large meson exchange currents are measured quantitatively with precision. Recent data on the electrodisintegration of deuterium at threshold and on the magnetic form factor of 3 He and tritium show that the pionic exchange current is well understood. There is no satisfactory theoretical description of shorter range processes

  2. Capacitive divider for output voltage measurement of intense electron beam accelerator

    International Nuclear Information System (INIS)

    Ding Desheng; Yi Lingzhi; Yu Binxiong; Hong Zhiqiang; Liu Jinliang

    2012-01-01

    A kind of simple-mechanism, easy-disassembly self-integrating capacitive divider used for measuring diode output voltage of intense electron beam accelerator (IEBA) is developed. The structure of the capacitive divider is described, and the capacitance value of the capacitive divider is calculated by theoretical analysis and electromagnetic simulation. The dependence of measurement voltage on electrical parameters such as stray capacitance, earth capacitance of front resistance is obtained by PSpice simulation. Measured waveforms appear overshoot phenomenon when stray capacitance of front resistance is larger, and the wavefront will be affected when earth capacitance of front resistance is larger. The diode output voltage waveforms of intense electron beam accelerator, are measured by capacitive divider and calibrated by water resistance divider, which is accordance with that measured by a resistive divider, the division ratio is about 563007. The designed capacitive divider can be used to measure high-voltage pulse with 100 ns full width at half maximum. (authors)

  3. Electron bunch structure in energy recovery linac with high-voltage dc photoelectron gun

    Directory of Open Access Journals (Sweden)

    Y. M. Saveliev

    2016-09-01

    Full Text Available The internal structure of electron bunches generated in an injector line with a dc photoelectron gun is investigated. Experiments were conducted on the ALICE (accelerators and lasers in combined experiments energy recovery linac at Daresbury Laboratory. At a relatively low dc gun voltage of 230 kV, the bunch normally consisted of two beamlets with different electron energies, as well as transverse and longitudinal characteristics. The beamlets are formed at the head and the tail of the bunch. At a higher gun voltage of 325 kV, the beam substructure is much less pronounced and could be observed only at nonoptimal injector settings. Experiments and computer simulations demonstrated that the bunch structure develops during the initial beam acceleration in the superconducting rf booster cavity and can be alleviated either by increasing the gun voltage to the highest possible level or by controlling the beam acceleration from the gun voltage in the first accelerating structure.

  4. Effects of an applied voltage on direct interspecies electron transfer via conductive materials for methane production.

    Science.gov (United States)

    Lee, Jung-Yeol; Park, Jeong-Hoon; Park, Hee-Deung

    2017-10-01

    Direct interspecies electron transfer (DIET) between exoelectrogenic bacteria and methanogenic archaea via conductive materials is reported as an efficient method to produce methane in anaerobic organic waste digestion. A voltage can be applied to the conductive materials to accelerate the DIET between two groups of microorganisms to produce methane. To evaluate this hypothesis, two sets of anaerobic serum bottles with and without applied voltage were used with a pair of graphite rods as conductive materials to facilitate DIET. Initially, the methane production rate was similar between the two sets of serum bottles, and later the serum bottles with an applied voltage of 0.39V showed a 168% higher methane production rate than serum bottles without an applied voltage. In cyclic voltammograms, the characteristic redox peaks for hydrogen and acetate oxidation were identified in the serum bottles with an applied voltage. In the microbial community analyses, hydrogenotrophic methanogens (e.g. Methanobacterium) were observed to be abundant in serum bottles with an applied voltage, while methanogens utilizing carbon dioxide (e.g., Methanosaeta and Methanosarcina) were dominant in serum bottles without an applied voltage. Taken together, the applied voltage on conductive materials might not be effective to promote DIET in methane production. Instead, it appeared to generate a condition for hydrogenotrophic methanogenesis. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. A high voltage test stand for electron gun qualification for LINACs

    International Nuclear Information System (INIS)

    Wanmode, Yashwant D.; Mulchandani, J.; Acharya, M.; Bhisikar, A.; Singh, H.G.; Shrivastava, Purushottam

    2011-01-01

    An electron gun lest stand has been developed at RRCAT. The test stand consists of a high voltage pulsed power supply, electron gun filament supply, grid supply, UHV system and electron gun current measurement system. Several electron guns developed indigenously were evaluated on this test stand. The shielding is provided for the electron gun set up. Electron gun tests can be tested upto 55 kV with pulse width of 15 microsecs and pulse repetition rates up to 200 Hz. The technical details of the subsystems are furnished and results of performance of the test stand have been reported in this paper. (author)

  6. Calculated sputtering and atomic displacement cross-sections for applications to medium voltage analytical electron microscopy

    International Nuclear Information System (INIS)

    Bradley, C.R.; Zaluzec, N.J.

    1987-08-01

    The development of medium voltage electron microscopes having high brightness electron sources and ultra-high vacuum environments has been anticipated by the microscopy community now for several years. The advantages of such a configuration have been discussed to great lengths, while the potential disadvantages have for the most part been neglected. The most detrimental of these relative to microcharacterization are the effects of electron sputtering and atomic displacement to the local specimen composition. These effects have in the past been considered mainly in the high voltage electron microscope regime and generally were ignored in lower voltage instruments. Recent experimental measurements have shown that the effects of electron sputtering as well as radiation induced segregation can be observed in conventional transmission electron microscopes. It is, therefore, important to determine at what point the effects will begin to manifest themselves in the new generation of medium voltage analytical electron microscopes. In this manuscript we present new calculations which allow the individual experimentalist to determine the potential threshold levels for a particular elemental system and thus avoid the dangers of introducing artifacts during microanalysis. 12 refs., 3 figs

  7. The energy spectrum of the 'runaway' electrons from a high voltage pulsed discharge

    International Nuclear Information System (INIS)

    Ruset, C.

    1985-01-01

    Some experimental results are presented on the influence of the pressure upon the energy spectrum of the runaway electrons generated into a pulsed high voltage argon discharge. These electrons enter a state of continuous acceleration between two collisions with rapidly increasing free path. The applied discharge current varies from 10 to 300 A, the pulse time is about 800 ns. Relativistic effects are taken into consideration. Theoretical explanation is based on the pnenomenon of electron spreading on plasma oscillations. (D.Gy.)

  8. Electron beam producing system for very high acceleration voltages and beam powers

    International Nuclear Information System (INIS)

    Andelfinger, C.; Dommaschk, W.; Ott, W.; Ulrich, M.; Weber, G.

    1975-01-01

    An electron beam producing system for acceleration voltages on the order of megavolts and beam powers on the order of gigawatts is described. A tubular housing of insulating material is used, and adjacent to its one closed end, a field emission cathode with a large surface area is arranged, while at its other end, from which the electron beam emerges, an annular anode is arranged. The device for collimating the electron beam consists of annular electrodes. (auth)

  9. High voltage system design for the IUCF 300 KV electron cooling system

    International Nuclear Information System (INIS)

    Bertuccio, T.; Brown, B.; Donica, G.; Ellison, T.; Friesel, D.L.

    1985-01-01

    A summary of the electron beam high voltage system design for the IUCF Cooler now under construction, is presented. There are extremely stringent regulation requirements (about 10ppm) on the main high voltage power supply (-300 kVDC, 15 mA), and less stringent requirements on the gun anode power supply, in order to achieve the regulation needed to store beams in the IUCF Cooler with very low momentum spreads (Δp/p approx. = 2 x 10 -5 ). An overview of the main high voltage power supply (HVPS) specifications and design, as well as provisions and plans to improve the regulation are discussed. The electron collection system, modeled after the FNAL collector which was able to collect between 99.9% and 99.99% of the electron beam, is discussed along with the requirements of the associated power supplies. The designs of the high voltage acceleration structures and high voltage platform are discussed, as well as practical design considerations based upon experience with the Fermilab 120 keV electron cooling system

  10. Lowering effect of radioactive irradiation on breakdown voltage and electron avalanche pulse characteristics

    International Nuclear Information System (INIS)

    Kawahashi, Akira; Nakano, Toru; Hosokawa, Tatsuzo; Miyoshi, Yosinori.

    1976-01-01

    In the time resolving measurement of the growing process and breakdown of electron avalanche in a gap of uniform electric field, the phenomenon that DC breakdown voltage slightly lowered was observed when β ray was irradiated as the initial electron source, as compared with unirradiated condition. Beta source used is 90 Sr- 90 Y of 2 mCi in radiative equilibrium. The experimental results and the examination are described in detail. In brief, the remarkable superposition of succeeding avalanche pulse over the preceeding avalanche pulse waveform was observed under the gap condition in which the breakdown voltage decreased in β-ray irradiation. Thus this superposition of avalanche pulses is considered as one of the causes of the breakdown voltage reduction. When β source is used as the initial electron source, the number of supplied initial electrons is very large as compared with unity, and at the same time, a great number of initial electrons can be supplied within the diffusion radius r of avalanche. Then the effect of initial electron number n 0 was considered by employing a diagram for breakdown scheme. The transition from Townsend type breakdown to streamer type breakdown occurs owing to increasing n 0 , and in that condition, the breakdown voltage lowers slightly. (Wakatsuki, Y)

  11. Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

    Science.gov (United States)

    Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

    2017-10-01

    A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

  12. Control and protection system for an electron injector installed in a high-voltage terminal

    International Nuclear Information System (INIS)

    Martin, D.; Radu, A.; Baciu, G.; Grigore, D.

    1979-01-01

    The basic principles of operation of the control and protection system for an electron accelerator gun are described. The electron gun parameters are independently controlled by using four special secondary windings of the high-voltage transformer providing the accelerating voltage. Four groups of thyristor ac regulators employing phase control are connected so as to provide independent adjustment of each parameter of the gun. The power controller of modular construction has a single-phase supply from the 50 Hz 220 V mains. (orig.)

  13. Successful application of Low Voltage Electron Microscopy to practical materials problems

    International Nuclear Information System (INIS)

    Bell, David C.; Mankin, Max; Day, Robert W.; Erdman, Natasha

    2014-01-01

    Low-voltage High-Resolution Electron Microscopy (LVHREM) has several advantages, including increased cross-sections for inelastic and elastic scattering, increased contrast per electron, decreased delocalization effects and reduced knock-on damage. Imaging at differing voltages has shown advantages for imaging materials that are knock-on damage sensitive. We show experimentally that different materials systems benefit from low voltage high-resolution microscopy. There are advantages for imaging single layer materials such as graphene at below the knock-on threshold; we present an example of imaging a graphene sheet at 40 kV. We have also examined mesoporous silica decorated with Pd nanoparticles and carbon black functionalized with Pd/Pt nanoparticles. In these cases we show that the lower voltage imaging maintains the structure of the surrounding matrix during imaging, whereas aberration correction provides the higher resolution for imaging the nanoparticle lattice. Perhaps surprisingly we show that zeolites damage preferentially by ionization effects (radiolysis). The current literature suggests that below incident energies of 40 kV the damage is mainly radiolitic, whereas at incident energies above 200 kV the knock-on damage and material sputtering will be the dominant effect. Our experimental observations support this conclusion and the effects we have observed at 40 kV are not indicative of knock-on damage. Other nanoscale materials such as thin silicon nanowires also benefit from lower voltage imaging. LVHREM imaging provides an excellent option to avoid beam damage to nanowires; our results suggest that LVHREM is suitable for nanowire-biological composites. Our experimental observations serve as a clear demonstration that even at 40 keV accelerating voltage, LVHREM can be used without inducing beam damage to locate dislocations and other crystalline defects, which may have adverse effects on nanowire device performance. Low voltage operation will likely

  14. Differential cross sections for electron-impact vibrational-excitation of tetrahydrofuran at intermediate impact energies

    Energy Technology Data Exchange (ETDEWEB)

    Do, T. P. T. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, South Australia 5001 (Australia); School of Education, Can Tho University, Campus II, 3/2 Street, Xuan Khanh, Ninh Kieu, Can Tho City (Viet Nam); Duque, H. V. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, South Australia 5001 (Australia); Departamento de Física, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, Minas Gerais (Brazil); Lopes, M. C. A. [Departamento de Física, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, Minas Gerais (Brazil); Konovalov, D. A.; White, R. D. [College of Science, Technology and Engineering, James Cook University, Townsville (Australia); Brunger, M. J., E-mail: michael.brunger@flinders.edu.au, E-mail: darryl.jones@flinders.edu.au [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, South Australia 5001 (Australia); Institute of Mathematical Sciences, University of Malaya, 50603 Kuala Lumpur (Malaysia); Jones, D. B., E-mail: michael.brunger@flinders.edu.au, E-mail: darryl.jones@flinders.edu.au [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, South Australia 5001 (Australia)

    2015-03-28

    We report differential cross sections (DCSs) for electron-impact vibrational-excitation of tetrahydrofuran, at intermediate incident electron energies (15-50 eV) and over the 10°-90° scattered electron angular range. These measurements extend the available DCS data for vibrational excitation for this species, which have previously been obtained at lower incident electron energies (≤20 eV). Where possible, our data are compared to the earlier measurements in the overlapping energy ranges. Here, quite good agreement was generally observed where the measurements overlapped.

  15. Design of full digital 50 kV electronic gun high voltage power supply

    International Nuclear Information System (INIS)

    Ge Lei; Shang Lei

    2014-01-01

    The design of full digital electronic gun high voltage power supply based on DSP was introduced in this paper. This power supply has innovations of full digital feedback circuit and PID closed-loop control mode. The application of high frequency resonant converter circuit reduces the size of the resonant element and transformer. The current-coupling distributed high voltage transformer and rectifier circuit were employed in this power supply. By this way, the power supply efficiency is improved and the number of distributed parameters is reduced, and the rectifier circuit could work under the oil-free environment. This power supply has been used in electronic grid-control high voltage system of the irradiation accelerator. (authors)

  16. OBSERVATION OF MAGNETIC DOMAINS IN IRRADIATED TRANSITION METALS BY HIGH VOLTAGE ELECTRON MICROSCOPY

    OpenAIRE

    Ono , F.; Jakubovics , J.; Maeta , H.

    1988-01-01

    The effect of irradiation on the movement of domain walls was studied in ferromagnetic transition metals by using a high voltage electron microscope. In iron, a domain wall became easily movable at a 300 kV irradiation. The mobility was less affected in cobalt, while in nickel the effect was the greatest.

  17. Operation Manual of the high voltage generator of the Pelletron electron accelerator

    International Nuclear Information System (INIS)

    Hernandez M, V.; Lopez V, H.; Alba P, U.

    1988-04-01

    The first version of a manual to operate the generator of high voltage generator of the Pelletron electron accelerator built in the ININ is presented. Since this generator has several components and/or elements, the one manual present has the purpose that the armed one or maintenance of anyone on its parts, is carried out in an orderly and efficient way. (Author)

  18. The effect of voltage droop on the output of an electrostatic accelerator free electron laser

    International Nuclear Information System (INIS)

    Wright, C.C.; Al-Shamma'a, A.I.; Lucas, J.; Stuart, R.A.

    2000-01-01

    Electrostatic accelerator FEL oscillators when operated with energy recovery offer the prospect of long pulse, single-mode operation with very narrow linewidth at high-power levels. However, special care with wiggler construction, electron beam steering, and collector design is necessary to reduce the fraction of the electron beam lost before depressed collection to a sufficiently small value to stop the output hopping from one longitudinal mode of the cavity to another due to the droop of the terminal accelerating voltage. We are investigating what minimum recovery fraction is required both experimentally and theoretically. We have constructed a pulsed microwave FEM oscillator having an accelerating voltage of 65 kV supplied by a source, which is a capacitor, charged by a low-current, high-voltage supply. By changing the capacitor value, it is easily possible to achieve a range of voltage droop rates. Furthermore, because the gain bandwidth of the FEM is small, only 1 or 2 longitudinal modes are capable of being amplified at any voltage which eases the problem of analysing mode hopping behaviour. A simple model of mode switching is outlined

  19. Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

    Science.gov (United States)

    Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

    2018-04-01

    To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

  20. THREE-DIMENSIONAL OBSERVATIONS ON THICK BIOLOGICAL SPECIMENS BY HIGH VOLTAGE ELECTRON MICROSCOPY

    Directory of Open Access Journals (Sweden)

    Tetsuji Nagata

    2011-05-01

    Full Text Available Thick biological specimens prepared as whole mount cultured cells or thick sections from embedded tissues were stained with histochemical reactions, such as thiamine pyrophosphatase, glucose-6-phosphatase, cytochrome oxidase, acid phosphatase, DAB reactions and radioautography, to observe 3-D ultrastructures of cell organelles producing stereo-pairs by high voltage electron microscopy at accerelating voltages of 400-1000 kV. The organelles demonstrated were Golgi apparatus, endoplasmic reticulum, mitochondria, lysosomes, peroxisomes, pinocytotic vesicles and incorporations of radioactive compounds. As the results, those cell organelles were observed 3- dimensionally and the relative relationships between these organelles were demonstrated.

  1. Magnetic lens apparatus for a low-voltage high-resolution electron microscope

    Science.gov (United States)

    Crewe, Albert V.

    1996-01-01

    A lens apparatus in which a beam of charged particles of low accelerating voltage is brought to a focus by a magnetic field, the lens being situated behind the target position. The lens comprises an electrically-conducting coil arranged around the axis of the beam and a magnetic pole piece extending along the axis of the beam at least within the space surrounded by the coil. The lens apparatus comprises the sole focusing lens for high-resolution imaging in a low-voltage scanning electron microscope.

  2. Voltage surges induced in transformer secondaries with loads characterized by sensitive electronic equipment

    Energy Technology Data Exchange (ETDEWEB)

    Cogo, Joao Roberto [GSI Engenharia e Consultoria Ltda., Taubate, SP (Brazil)], Email: gsi@gsiconsultoria.com.br; Dommel, Hermann Wilhelm [University of British Columbia, Vancouver (Canada)], Email: hermannd@ece.ubc.ca

    2007-07-01

    The grounding of sensitive electronic equipment such as computers, programmable logic controllers (PLC), process control systems, and other electronic equipment is one of the most important considerations towards obtaining an efficient operation of such systems. Such equipment, which for the purposes of this work is called 'Sensitive Electronic Equipment - SEE' is very sensitive to faults and low intensity random voltages which have no effect upon the electrical power equipment and upon human beings. In this work, the grounding problem is evaluated, to guide the user on the proper installation of SEEs, so as to prevent them from being damaged. The following items will be discussed: voltages which SEEs are subject to during incidence of atmospheric surges in the distribution overhead lines to which they are connected; sustained voltage that the high voltage supply of SEEs must be able to withstand during line-to-ground faults that originate from atmospheric surges that reach the transmission lines which are connected to the electrical power self producers (or electrical power independent producers). (author)

  3. SVC or VSC for reduction of voltage sags and flicker. Trends in power electronics

    Energy Technology Data Exchange (ETDEWEB)

    Haeusler, M; Schnettler, A [ABB Calor Emag Schaltanlagen AG, Mannheim (Germany); Halvarsson, P [ABB Power Systems AB, Vaesteraas (Sweden)

    1997-07-01

    In the past complaints about insufficient power quality were often caused by flicker observed in the neighbourhood of industrial networks. Voltage sags due to faults in the power system pass, however, mostly unnoticed as not-so-common events. Now electronic controls are penetrating more and more in industry. Electronic controllers on factory machines - particularly those for variable speed motors - are vulnerable to voltage sags. A one-tenth second sag can cause a $200.000 downtime incident in a big factory. Therefore the demands on power quality are rising in industry as well. The costly separation in clean networks for residential areas and dirty networks for industrial grids is no perfect solution to avoid such problems. Static VAr Compensators (SVC) are traditionally one means to control the voltage in industrial networks. Because of the recent development of powerful gate turn-off semiconductor devices another type of converter has gained new interest for mitigation of system disturbances, the voltage-source converter (VSC). The characteristics of both types of power electronics in view of their possibilities for this application are presented. (orig.)

  4. Progress in element analysis on a high-voltage electron microscope

    International Nuclear Information System (INIS)

    Tivol, W.F.; Barnard, D.; Guha, T.

    1985-01-01

    X-Ray microprobe (XMA) and electron energy-loss (EELS) spectrometers have been installed on the high-voltage electron microscope (HVEM). The probe size has been measured and background reduction is in progress for XMA and EELS as are improvements in electron optics for EELS and sensitivity measurements. XMA is currently useful for qualitative analysis and has been used by several investigators from our laboratory and outside laboratories. However, EELS background levels are still too high for meaningful results to be obtained. Standards suitable for biological specimens are being measured, and a library for quantitative analysis is being compiled

  5. Bias voltage effect on electron tunneling across a junction with a ferroelectric–ferromagnetic two-phase composite barrier

    International Nuclear Information System (INIS)

    Wang Jian; Ju Sheng; Li, Z.Y.

    2012-01-01

    The effect of bias voltage on electron tunneling across a junction with a ferroelectric–ferromagnetic composite barrier is investigated theoretically. Because of the inversion symmetry breaking of the spontaneous ferroelectric polarization, bias voltage dependence of the electron tunneling shows significant differences between the positive bias and the negative one. The differences of spin filtering or tunnel magnetoresistance increase with the increasing absolute value of bias voltage. Such direction preferred electron tunneling is found intimately related with the unusual asymmetry of the electrical potential profile in two-phase composite barrier and provides a unique change to realize rectifying functions in spintronics. - Highlights: ► Electron tunneling across a ferroelectric–ferromagnetic composite barrier junction. ► TMR effect is different under the same value but opposite direction bias voltage. ► This directionality of the electron tunneling enhances with increasing bias voltage.

  6. Development of an environmental high-voltage electron microscope for reaction science.

    Science.gov (United States)

    Tanaka, Nobuo; Usukura, Jiro; Kusunoki, Michiko; Saito, Yahachi; Sasaki, Katuhiro; Tanji, Takayoshi; Muto, Shunsuke; Arai, Shigeo

    2013-02-01

    Environmental transmission electron microscopy and ultra-high resolution electron microscopic observation using aberration correctors have recently emerged as topics of great interest. The former method is an extension of the so-called in situ electron microscopy that has been performed since the 1970s. Current research in this area has been focusing on dynamic observation with atomic resolution under gaseous atmospheres and in liquids. Since 2007, Nagoya University has been developing a new 1-MV high voltage (scanning) transmission electron microscope that can be used to observe nanomaterials under conditions that include the presence of gases, liquids and illuminating lights, and it can be also used to perform mechanical operations to nanometre-sized areas as well as electron tomography and elemental analysis by electron energy loss spectroscopy. The new instrument has been used to image and analyse various types of samples including biological ones.

  7. A quantum accurate waveform synthesizer as a voltage reference for an electronic primary thermometer

    Science.gov (United States)

    Pollarolo, Alessio; Benz, Samuel; Rogalla, Horst; Dresselhaus, Paul

    2014-03-01

    We are using a quantum voltage noise source (QVNS) for use as an intrinsically accurate voltage reference for a new type of electronic temperature standard. In Johnson Noise Thermometry (JNT) the noise of a resistor is used to measure temperature or Boltzmann's constant k, because the Nyquist equation =4kTR Δf shows that the power spectral density is proportional to k, temperature T, resistance R and measurement bandwidth Δf . The QVNS is a digital to analog converter used to synthesize a voltage waveform that resembles pseudo-random noise comparable in amplitude to the resistor noise. The signal generated is a frequency comb of harmonics tones that are equally spaced in frequency, all having identical amplitudes but random phases. The QVNS is an array superconducting Josephson junctions that are biased with a pulsed waveform clocked at 10 GHz. The accuracy of the voltage waveform derives from the identical voltage pulses produced by each junction that are perfectly quantized because their time-integrals are always equal to flux quantum h/2 e. The time-dependent output voltage waveform is determined by the number of pulses and their density in time. The measurement electronics exploits cross-correlation techniques to reduce the uncorrelated measurement noise so as to reveal the resistor noise, both of which are on the order of 2 nV/ √Hz. With this technique we have measured k with an uncertainty of about one part in 105, which we hope to improve by another order of magnitude with further research.

  8. High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

    Science.gov (United States)

    Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

    2017-09-01

    The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.

  9. Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

    Science.gov (United States)

    Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

    2017-11-01

    The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

  10. The effect of voltage droop on the output of an electrostatic accelerator free electron laser

    CERN Document Server

    Wright, C C; Lucas, J; Stuart, R A

    2000-01-01

    Electrostatic accelerator FEL oscillators when operated with energy recovery offer the prospect of long pulse, single-mode operation with very narrow linewidth at high-power levels. However, special care with wiggler construction, electron beam steering, and collector design is necessary to reduce the fraction of the electron beam lost before depressed collection to a sufficiently small value to stop the output hopping from one longitudinal mode of the cavity to another due to the droop of the terminal accelerating voltage. We are investigating what minimum recovery fraction is required both experimentally and theoretically. We have constructed a pulsed microwave FEM oscillator having an accelerating voltage of 65 kV supplied by a source, which is a capacitor, charged by a low-current, high-voltage supply. By changing the capacitor value, it is easily possible to achieve a range of voltage droop rates. Furthermore, because the gain bandwidth of the FEM is small, only 1 or 2 longitudinal modes are capable of b...

  11. Design and power management of an offshore medium voltage DC microgrid realized through high voltage power electronics technologies and control

    Science.gov (United States)

    Grainger, Brandon Michael

    The growth in the electric power industry's portfolio of Direct Current (DC) based generation and loads have captured the attention of many leading research institutions. Opportunities for using DC based systems have been explored in electric ship design and have been a proven, reliable solution for transmitting bulk power onshore and offshore. To integrate many of the renewable resources into our existing AC grid, a number of power conversions through power electronics are required to condition the equipment for direct connection. Within the power conversion stages, there is always a requirement to convert to or from DC. The AC microgrid is a conceptual solution proposed for integrating various types of renewable generation resources. The fundamental microgrid requirements include the capability of operating in islanding mode and/or grid connected modes. The technical challenges associated with microgrids include (1) operation modes and transitions that comply with IEEE1547 without extensive custom engineering and (2) control architecture and communication. The Medium Voltage DC (MVDC) architecture, explored by the University of Pittsburgh, can be visualized as a special type of DC microgrid. This dissertation is multi-faceted, focused on many design aspects of an offshore DC microgrid. The focal points of the discussion are focused on optimized high power, high frequency magnetic material performance in electric machines, transformers, and DC/DC power converters---all components found within offshore, power system architectures. A new controller design based upon model reference control is proposed and shown to stabilize the electric motor drives (modeled as constant power loads), which serve as the largest power consuming entities in the microgrid. The design and simulation of a state-of-the-art multilevel converter for High Voltage DC (HVDC) is discussed and a component sensitivity analysis on fault current peaks is explored. A power management routine is

  12. Photon- and electron-induced surface voltage in electron spectroscopies on ZnSe(0 0 1)

    International Nuclear Information System (INIS)

    Cantoni, M.; Bertacco, R.; Brambilla, A.; Ciccacci, F.

    2009-01-01

    The surface band bending in ZnSe(0 0 1), as a function of the temperature, is investigated both in the valence band (by photoemission) and in the conduction band (by inverse photoemission and absorbed current spectroscopies). Two different mechanisms are invoked for interpreting the experimental data: the band bending due to surface states, and the surface voltage induced by the incident beam. While the latter is well known in photoemission (surface photovoltage), we demonstrate the existence of a similar effect in inverse photoemission and absorbed current spectroscopies, induced by the incident electrons instead of photons. These results point to the importance of considering the surface voltage effect even in electron-in techniques for a correct evaluation of the band bending.

  13. Interactions in 2D electron and hole systems in the intermediate and ballistic regimes

    International Nuclear Information System (INIS)

    Proskuryakov, Y Y; Savchenko, A K; Safonov, S S; Li, L; Pepper, M; Simmons, M Y; Ritchie, D A; Linfield, E H; Kvon, Z D

    2003-01-01

    In different 2D semiconductor systems we study the interaction correction to the Drude conductivity in the intermediate and ballistic regimes, where the parameter k B Tτ/ h-bar changes from 0.1 to 10 (τ is momentum relaxation time). The temperature dependence of the resistance and magnetoresistance in parallel and perpendicular magnetic fields is analysed in terms of the recent theories of electron-electron interactions in systems with different degree of disorder and different character of the fluctuation potential. Generally, good agreement is found between the experiments and the theories

  14. Differential cross sections for inelastic scattering of electrons on Kr and Xe atoms at intermediate energies

    International Nuclear Information System (INIS)

    Filipovic, D.M.

    1989-01-01

    Electron-impact excitation of the larger- number noble-gas atoms is a way of understanding excitation mechanisms in atomic collisional processes. Krypton and xenon have the largest atomic number of all the stable noble gases. Therefore, effects dependent on the size of a target atom, such as alignment and orientation of the atomic outer shell charge cloud after collisional excitation, are best observed by studying these atoms. Normalized, absolute differential cross sections (DCS's) for the lowest electronic states of Kr and Xe atoms, at intermediate energies, are the subject of this report

  15. Power-supply system for high-voltage electron guns with grid control

    International Nuclear Information System (INIS)

    Grigorev, Y.V.

    1985-01-01

    A power-supply system for electron guns with grid control is described which consists of a source of accelerating voltage between 20 and 180 kV with a current of 100 mA and a control circuit for an electron gun that contains a pulse generator having an output voltage of up to 5 kV for pulse durations of 2, 10, 50 and 90 microseconds. The output pulses of the generator are synchronized with a certain phase of the cathode heater current of the gun, and they can be repeated at a frequency between 100 and 0.4 Hz. The system is reliable and resistant to the overloads associated with breakdowns in the gun

  16. Development and application of a window-type environmental cell in high voltage electron microscope

    International Nuclear Information System (INIS)

    Wakasugi, Takenobu; Isobe, Shigehito; Umeda, Ayaka; Wang, Yongming; Hashimoto, Naoyuki; Ohnuki, Somei

    2013-01-01

    Highlights: ► A window-type environmental cell for a high voltage electron microscope (HVEM) is developed. ► In situ HVEM image of Pd under an H2 gas pressure is obtained. ► The effect of the window materials on the resolution and contamination of the HVEM image is tested. -- Abstract: A close type of an environmental cell was developed for a high voltage electron microscope. Using this cell allowed an in situ observation of hydrogenation in Pd particles under H 2 gas of 0.05 MPa at RT. Two types of window films, Tri-Acetyl-Cellulose (TAC) and Silicon Nitride (SiN), were used for testing the contamination on the sample, as well as the strength for pressure. We confirmed the hydrogenation in diffraction patterns and images, and additionally the image resolution of 0.19 nm was obtained by using a SiN film with a thickness of 17 nm

  17. Investigation of Electron Beam Induced Mass Loss of Embedding Media in the Low Voltage STEM

    Czech Academy of Sciences Publication Activity Database

    Novotná, V.; Hrubanová, Kamila; Nebesářová, J.; Krzyžánek, Vladislav

    2014-01-01

    Roč. 20, S3 (2014), s. 1270-1271 ISSN 1431-9276 R&D Projects: GA MŠk EE.2.3.20.0103; GA MŠk(CZ) LO1212; GA ČR(CZ) GA14-20012S; GA TA ČR TE01020118 Institutional support: RVO:68081731 Keywords : mass loss * mass -thickness measurement * low voltage STEM Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.877, year: 2014

  18. Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage

    International Nuclear Information System (INIS)

    Zhang Yu-Ping; Yin Yi-Heng; Lü Huan-Huan; Zhang Hui-Yun

    2014-01-01

    We study the electronic properties for the graphene-based one-dimensional superlattices, whose potential voltages vary according to the envelope of a Gaussian function. It is found that an unusual Dirac point exists and its location is exactly associated with a zero-averaged wave number (zero-k-bar ) gap. This zero-k-bar gap is less sensitive to incident angle and lattice constants, properties opposing those of Bragg gap. The defect mode appearing inside the zero-k-bar gap has an effect on transmission, conductance, and shot noise, which will be useful for further investigation. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Calibration of Monte Carlo simulation code to low voltage electron beams through radiachromic dosimetry

    International Nuclear Information System (INIS)

    Weiss, D.E.; Kalweit, H.W.; Kensek, R.P.

    1994-01-01

    A simple multilayer slab model of an electron beam using the ITS/TIGER code can consistently account for about 80% of the actual dose delivered by a low voltage electron beam. The difference in calculated values is principally due to the 3D hibachi structure which blocks 22% of the beam. A 3D model was constructed using the ITS/ACCEPT code to improve upon the TIGER simulations. A rectangular source description update to the code and reproduction of all key geometric elements involved, including the hibachi, accounted for 90-95% of the dose received by routine dosimetry

  20. Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

    Energy Technology Data Exchange (ETDEWEB)

    Baldacchini, Chiara [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy); Institute of Agro-Environmental and Forest Biology, CNR, I-05010 Porano (Italy); Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore, E-mail: cannistr@unitus.it [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy)

    2015-05-04

    Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

  1. Electronic Devices for Controlling the Very High Voltage in the ALICE TPC Detector

    CERN Document Server

    Boccioli, Marco

    2007-01-01

    The Time Projection Chamber (TPC) is the core of the ALICE experiment at CERN. The TPC Very High Voltage project covers the development of the control system for the power supply that generates the 100kV necessary for the drift field in the TPC. This paper reports on the project progress, introducing the control system architecture from the electronics up to the control level. All the electronic devices will be described, highlighting their communication issues, and the challenges in integrating these devices in a PLC-based control system.

  2. Reconstruction of the electron energy distribution function from probe characteristics at intermediate and high pressures

    International Nuclear Information System (INIS)

    Arslanbekov, R.R.; Kolokolov, N.B.; Kudryavtsev, A.A.; Khromov, N.A.

    1991-01-01

    Gorbunov et al. have developed a kinetic theory of the electron current drawn by a probe, which substantially extends the region of applicability of the probe method for determining the electron energy distribution function, enabling probes to be used for intermediate and high pressures (up to p ≤ 0.5 atm for monatomic gases). They showed that for λ var-epsilon >> a + d (where a is the probe radius, d is the sheath thickness, and λ var-epsilon is the electron energy relaxation length) the current density j e (V) drawn by the probe is related to the unperturbed distribution function by an integral equation involving the distribution function. The kernal of the integral equation can be written as a function of the diffusion parameter. In the present paper the method of quadrature sums is employed in order to obtain the electron energy distribution function from probe characteristics at intermediate and high pressures. This technique enables them to recover the distribution function from the integral equation when the diffusion parameter has an arbitrary energy dependence ψ 0 (var-epsilon) in any given energy range. The effectiveness of the method is demonstrated by application to both model problems and experimental data

  3. MOS Capacitance—Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

    International Nuclear Information System (INIS)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency Capacitance—Voltage (C—V) curves of Metal—Oxide—Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01C OX to > 10C OX . Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, N DD , the ground state electron trapping energy level depth measured from the conduction band edge, E C –E D , the degeneracy of the trapped electron at the ground state, g D , the device temperature, T, and the gate oxide thickness, x OX . (invited papers)

  4. Growth and decay of surface voltage on silver diffused polyimide exposed to 3-15 keV electrons

    Energy Technology Data Exchange (ETDEWEB)

    Mahapatra, S K; Dhole, S D; Bhoraskar, V N [Department of Physics, University of Pune, Pune-411007 (India)

    2007-02-21

    During electron irradiation, the growth in the surface voltage on virgin and silver diffused polyimide sample was studied by varying electron energy from 3 to 15 keV and beam diameter from 3 to 15 mm. At a constant beam current, the surface voltage increased nonlinearly with electron energy but decreased slowly with beam diameter at fixed electron energy. At a surface voltage around saturation or beyond 3 kV, the electron beam was switched off and the decay in the surface voltage was studied for a period of 9 x 10{sup 4} s. The surface analysis revealed that the relative concentrations of carbon increased and that of the oxygen and the nitrogen decreased in the electron irradiated virgin and silver diffused polyimide sample, however in different proportions. Under the identical conditions of electron irradiation, the growth rate of the surface voltage, the post irradiated surface resistivity and the voltage decay constant of the silver diffused polyimide were lower than that of the virgin polyimide. The results of the present study reveal that the resistance of the silver diffused polyimide to keV electrons is higher than that of the virgin polyimide.

  5. Excitation of vibrational quanta in furfural by intermediate-energy electrons

    Science.gov (United States)

    Jones, D. B.; Neves, R. F. C.; Lopes, M. C. A.; da Costa, R. F.; Varella, M. T. do N.; Bettega, M. H. F.; Lima, M. A. P.; García, G.; Blanco, F.; Brunger, M. J.

    2015-12-01

    We report cross sections for electron-impact excitation of vibrational quanta in furfural, at intermediate incident electron energies (20, 30, and 40 eV). The present differential cross sections are measured over the scattered electron angular range 10°-90°, with corresponding integral cross sections subsequently being determined. Furfural is a viable plant-derived alternative to petrochemicals, being produced via low-temperature plasma treatment of biomass. Current yields, however, need to be significantly improved, possibly through modelling, with the present cross sections being an important component of such simulations. To the best of our knowledge, there are no other cross sections for vibrational excitation of furfural available in the literature, so the present data are valuable for this important molecule.

  6. Excitation of vibrational quanta in furfural by intermediate-energy electrons

    Energy Technology Data Exchange (ETDEWEB)

    Jones, D. B. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, South Australia 5001 (Australia); Neves, R. F. C. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, South Australia 5001 (Australia); Instituto Federal do Sul de Minas Gerais, Campus Poços de Caldas, Minas Gerais (Brazil); Departamento de Física, Universidade Federal de Juiz de Fora, 36036-900, Juiz de Fora, MG (Brazil); Lopes, M. C. A. [Departamento de Física, Universidade Federal de Juiz de Fora, 36036-900, Juiz de Fora, MG (Brazil); Costa, R. F. da [Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, Campinas, 13083-859 São Paulo (Brazil); Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, Santo André, 09210-580 São Paulo (Brazil); Varella, M. T. do N. [Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, São Paulo (Brazil); Bettega, M. H. F. [Departamento de Física, Universidade Federal do Paraná, CP 19044, 81531-990 Curitiba, Paraná (Brazil); Lima, M. A. P. [Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, Campinas, 13083-859 São Paulo (Brazil); García, G. [Instituto de Física Fundamental, CSIC, Serrano 113-bis, 28006 Madrid (Spain); and others

    2015-12-14

    We report cross sections for electron-impact excitation of vibrational quanta in furfural, at intermediate incident electron energies (20, 30, and 40 eV). The present differential cross sections are measured over the scattered electron angular range 10°–90°, with corresponding integral cross sections subsequently being determined. Furfural is a viable plant-derived alternative to petrochemicals, being produced via low-temperature plasma treatment of biomass. Current yields, however, need to be significantly improved, possibly through modelling, with the present cross sections being an important component of such simulations. To the best of our knowledge, there are no other cross sections for vibrational excitation of furfural available in the literature, so the present data are valuable for this important molecule.

  7. Excitation of vibrational quanta in furfural by intermediate-energy electrons

    International Nuclear Information System (INIS)

    Jones, D. B.; Neves, R. F. C.; Lopes, M. C. A.; Costa, R. F. da; Varella, M. T. do N.; Bettega, M. H. F.; Lima, M. A. P.; García, G.

    2015-01-01

    We report cross sections for electron-impact excitation of vibrational quanta in furfural, at intermediate incident electron energies (20, 30, and 40 eV). The present differential cross sections are measured over the scattered electron angular range 10°–90°, with corresponding integral cross sections subsequently being determined. Furfural is a viable plant-derived alternative to petrochemicals, being produced via low-temperature plasma treatment of biomass. Current yields, however, need to be significantly improved, possibly through modelling, with the present cross sections being an important component of such simulations. To the best of our knowledge, there are no other cross sections for vibrational excitation of furfural available in the literature, so the present data are valuable for this important molecule

  8. Electron heating of voltage-driven and matched dual frequency discharges

    International Nuclear Information System (INIS)

    Lieberman, M A; Lichtenberg, A J

    2010-01-01

    In a dual frequency capacitive sheath, a high frequency uniform sheath motion is coupled with a low frequency Child law sheath motion. For current-driven high and low frequency sheaths, the high frequency sheath motion generates most of the ohmic and stochastic heating of the discharge electrons. The low frequency motion, in addition to its primary purpose of establishing the ion bombarding energy, also increases the heating by widening the sheath width and transporting the oscillating electrons to regions of lower plasma density, and hence higher sheath velocity. In this work, we show that for voltage-driven high and low frequency sheaths, increasing the low frequency voltage reduces the heating, due to the reduced high frequency current that flows through the sheath under voltage-driven conditions. We determine the dependence of the heating on various parameters and compare the results with the current-driven case. Particle-in-cell simulations are used to confirm this result. Discharges generally employ a matching network to maximize the power transmitted to the plasma. We obtain analytic expressions for the effect of the low frequency source under matched conditions and, again, find that the low frequency source reduces the heating.

  9. Disinfection of sludge and waste-water by irradiation with electrons of low accelerating voltage

    International Nuclear Information System (INIS)

    Holl, P.; Schneider, H.

    1975-01-01

    From the point of view of hygiene, sewage sludge and water accumulating in ever increasing quantities, some of which is used in agriculture, represent a potential threat to the health of man and beast, as well as to the environment. It is known that these chains of infection can be broken up by ionizing radiation. The use of natural ionizing radiation or electron radiation with high accelerating voltage has not been accepted in practice because the radiation cannot be cut off and the investment cost for electron accelerators with an accelerating voltage of more than 1 MV is very high. These disadvantages may be overcome by using an electron accelerator with low accelerating voltage. Complex experiments have shown that it is not necessary to adapt the thickness of sewage sludge or water layer to the range of electrons. The layer to be irradiated may be much thicker if the substrate is revolved during irradiation. The advantages of this method are low accelerating voltage for the electrons and hence less costly radiation shielding, complete absorption of the radiated energy by the substrate, and low investment and operating cost. The sterilizing effect of the process can be explained by the secondary reactions that take place in the water, in addition to the primary reactions, when irradiating with high specific ionizing density. It is known from experiments carried out by Muenzner that water irradiated with electrons of high specific ionization density, when added to bacterial cultures, will destroy them. This is explained by the Weiss radical theory of water, with reaction products such as H 2 , O 2 and H 2 O 2 . The success of this process is shown by experiments with Escherichia coli, tap water to which Salmonella senftenberg were added, and by the content of Enterobacteriaceae in various sludges as a function of the irradiation period, as well as by the rate at which various invariable species of strongilide larvae, eggs of Ascaris suum, Fasciola hepatica and

  10. TiN coated aluminum electrodes for DC high voltage electron guns

    International Nuclear Information System (INIS)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-01-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes

  11. Low voltage powering of on-detector electronics for HL-LHC experiments upgrades

    CERN Document Server

    Bobillier, Vincent; Vasey, Francois; Karmakar, Sabyasachi; Maity, Manas; Roy, Subhasish; Kundu, Tapas Kumar

    2018-01-01

    All LHC experiments will be upgraded during the next LHC long shutdowns (LS2 and LS3). The increase in resolution and luminosity and the use of more advanced CMOS technology nodes typically implies higher current consumption of the on-detector electronics. In this context, and in view of limiting the cable voltage drop, point-of-load DC-DC converters will be used on detector. This will have a direct impact on the existing powering scheme, implying new AC-DC and/or DC-DC stages as well as changes in the power cabling infrastructure. This paper presents the first results obtained while evaluating different LV powering schemes and distribution layouts for HL-LHC trackers. The precise low voltage power source requirements are being assessed and understood using the CMS tracker upgrade as a use-case.

  12. Single electron capture differential cross section in H+ + He collisions at intermediate and high collision energies

    International Nuclear Information System (INIS)

    Abufager, P N; Fainstein, P D; MartInez, A E; Rivarola, R D

    2005-01-01

    The generalized continuum distorted wave-eikonal initial state (CDW-EIS II) approximation is employed to study differential cross sections (DCS) for single electron capture in H + + He collisions at intermediate and high energies. Present results are compared with theoretical calculations obtained using the previous CDW-EIS formulation in order to show the importance of the description of the bound and continuum target states in the entrance and exit channels, respectively. Both DCS are also shown together with other theoretical results and with experimental data

  13. Antibonding intermediate state in the theory of vibrational excitation of diatomic molecules by slow electrons

    International Nuclear Information System (INIS)

    Kazanskii, A.K.

    1982-01-01

    An exactly solvable model is constructed for the description of the processes that take place when a slow electron collides with a diatomic molecule (vibrational excitation, associative detachment, and dissociative attachment). As a particular model of the variant, the case of an antibonding (virtual) state of an intermediate state is considered, and a term of this state is parametrized in a very simple manner. The vibrational excitation and dissociative attachment are calculated for a system corresponding to the HCl molecule. The results are in good qualitative agreement with experiment

  14. Development techniques and electron optical studies of high voltage, high current electron guns

    International Nuclear Information System (INIS)

    Rangarajan, L.M.; Mahadevan, S.; Ramamurthi, S.S.

    1992-01-01

    The progress of the electron gun design, limiting to axially symmetric geometries is discussed here with a view to utilise such guns for electron accelerators. The mechanical design features leading to the physical configuration of the gun with stringent tolerances are outlined. Vacuum processing is done at pressures of 1.3x10 -5 Pa. The gun employs W-filament emitter or a cathode pellet with bombarder service. A water cooled compact faraday cup is used to measure the electron current. Electron gun geometries have been studied using the computer programme. The preveance of the gun is 0.7x10 -7 A/Vsup(1.5) at 80 kV. Developmental techniques of such pulsed electron guns are described. (author). 7 refs., 5 figs

  15. Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates

    International Nuclear Information System (INIS)

    Wu, Guodong; Wan, Changjin; Wan, Qing; Zhou, Jumei; Zhu, Liqiang

    2014-01-01

    Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO 2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics. (paper)

  16. Ion Back-Bombardment of GaAs Photocathodes Inside DC High Voltage Electron Guns

    CERN Document Server

    Grames, Joseph M; Brittian, Joshua; Charles, Daniel; Clark, Jim; Hansknecht, John; Lynn Stutzman, Marcy; Poelker, Matthew; Surles-Law, Kenneth E

    2005-01-01

    The primary limitation for sustained high quantum efficiency operation of GaAs photocathodes inside DC high voltage electron guns is ion back-bombardment of the photocathode. This process results from ionization of residual gas within the cathode/anode gap by the extracted electron beam, which is subsequently accelerated backwards to the photocathode. The damage mechanism is believed to be either destruction of the negative electron affinity condition at the surface of the photocathode or damage to the crystal structure by implantation of the bombarding ions. This work characterizes ion formation within the anode/cathode gap for gas species typical of UHV vacuum chambers (i.e., hydrogen, carbon monoxide and methane). Calculations and simulations are performed to determine the ion trajectories and stopping distance within the photocathode material. The results of the simulations are compared with test results obtained using a 100 keV DC high voltage GaAs photoemission gun and beamline at currents up to 10 mA D...

  17. Some applications of the high voltage electron microscope in physical metallurgy

    International Nuclear Information System (INIS)

    Regnier, P.; Thomas de Montpreville, C.

    1976-01-01

    The high voltage electron microscope (HVEM) is a microscope with a much higher penetration than the usual ones, as well as being a remarkable irradiation machine. The possible applications of the HVEM related to its advantages over the conventional microscopes are first discussed. The simultaneous use of the HVEM as an irradiation machine and an observation tool is then discussed, experiments carried in the laboratory being referred to. The last use of the HVEM makes it an irreplaceable tool for continuously following the clustering of irradiation defects [fr

  18. High resolution and high voltage electron microscopy at the University of California, Berkeley

    International Nuclear Information System (INIS)

    Thomas, G.; Westmacott, K.H.

    1978-01-01

    Recent applications of high-resolution and high-voltage techniques at Berkely are described, using 100-kV TEMs and a standard 650-keV HVEM: grain boundary precipitation in Al--Zn, lattice imaging of grain boundaries in ceramics, steels, phase transitions and magnetic properties of ferrites, lattice defects, precipitation in Al--Si and behavior of interstitial dislocations under electron irradiation, effect of oxide films on loop formation in Al--Mg, and polytypism in magnesium Sialon. 13 refs. 12 figs

  19. Application of magnetically insulated transmission lines for high current, high voltage electron beam accelerators

    International Nuclear Information System (INIS)

    Shope, S.L.; Mazarakis, M.G.; Frost, C.A.; Poukey, J.W.; Turman, B.N.

    1993-01-01

    Self Magnetically Insulated Transmission Lines (MITL) adders have been used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently the authors used a MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r b < 2 cm), 11 to 15 MeV, 50 to 100-kA beams with a small transverse velocity v perpendicular/c = β perpendicular ≤ 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. The authors' success with the MITL technology led them to investigate the application to higher energy accelerator designs. They have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30-50-ns FWHM output pulse

  20. Application of Magnetically Insulated Transmission Lines for high current, high voltage electron beam accelerators

    International Nuclear Information System (INIS)

    Shope, S.L.; Mazarakis, M.G.; Frost, C.A.; Poukey, J.W.; Turman, B.N.

    1991-01-01

    Self Magnetically Insulated Transmission Lines (MITL) adders have been used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently we used at MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r ρ < 2 cm), 11 to 15 MeV, 50 to 100-kA beams with a small transverse velocity v perpendicular/c = β perpendicular ≤ 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. Our success with the MITL technology led us to investigate the application to higher energy accelerator designs. We have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30--50 ns FWHM output pulse. 10 refs

  1. Application of magnetically insulated transmission lines for high current, high voltage electron beam accelerators

    Science.gov (United States)

    Shope, S. L.; Mazarakis, M. G.; Frost, C. A.; Poukey, J. W.; Turman, B. N.

    Self Magnetically Insulated Transmission Lines (MITL) adders were used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently we used at MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r(sub rho) less than 2 cm), 11 - 15 MeV, 50 - 100-kA beams with a small transverse velocity v(perpendicular)/c = beta(perpendicular) less than or equal to 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. Our success with the MITL technology led us to investigate the application to higher energy accelerator designs. We have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30 - 50 ns FWHM output pulse.

  2. Improvement the Capacity of Cockcroft-Walton High Voltage Source from 300 kV/20 mA to 500 kV/20 mA for Accelerating Voltage of Electron Beam Machine

    International Nuclear Information System (INIS)

    Suprapto; Djasiman

    2002-01-01

    The improvement capacity of Cockcroft-Walton high voltage source from 300 kV/20 mA to 500 kV/mA has been carrying out. To improve the capacity of high voltage source was done by means of increasing the stage number of voltage multiplier from 11 to 18 and its output voltage measuring resistance. Each stage of voltage multiplier consists of 2 capacitors and 2 circuits of high voltage diode. This voltage multiplier is constructed using main components of high voltage capacitor and high voltage diode each of 0.22 μF/50 kV and UF 5408 respectively. To avoid stray discharge and corona it was provided with high voltage electrode and corona ring. The test result indicated that the output voltage obtained from 16 stages was 350 kV according to operating condition of 25 MΩ resistive load and first stage voltage of 28.5 kV with oscillator frequency of 24 Hz. That condition requires anode voltage and current of 5.5 kV and 2.5 A respectively. The no load test for 16 stages indicates 400 kV of output voltage and 28.5 kV first stage voltage. Efficiency of high voltage source was 48 % at 6.75 kW of output power. The expected test of 500 kV with 18 stages of voltage multiplier can not be carried out because of some restrictive of loading system. From the test result can be predicted that the output voltage of 500 kV with 18 stages of voltage multiplier requires 31.2 kV of first stage voltage. Then the expected high voltage source of Cockcroft-Walton is capable as accelerating voltage source for Electron Beam Machine with energy of 500 kV. (author)

  3. Damage structure of gallium arsenide irradiated in a high-voltage electron microscope

    International Nuclear Information System (INIS)

    Loretto, D.; Loretto, M.H.

    1989-01-01

    Semi-insulating undoped gallium arsenide has been irradiated in a high-voltage electron microscope between room temperature and about 500 0 C for doses of up to 5 x 10 22 electrons cm -2 at 1 MeV. Room-temperature irradiation produces small (less than 5 nm) damage clusters. As the temperature of the irradiation is increased, the size of these clusters increases, until at about 300 0 C a high density of dislocation loops can be resolved. The dislocation loops, 20 nm or less in diameter, which are produced at about 500 0 C have been analysed in a bright field using a two-beam inside-outside method which minimises the tilt necessary between micrographs. It is concluded that the loops are an interstitial perfect-edge type with a Burgers vector of (a/2) . (author)

  4. Calculation of current-voltage characteristics of electron-capture detectors

    International Nuclear Information System (INIS)

    Hinneburg, D.; Grosse, H.J.; Leonhardt, J.; Popp, P.

    1983-01-01

    Starting from the law of conservation of charge a stationary one-dimensional non-linear differential equation system is derived, which is applied to the direct-current mode of an electron-capture detector with parallel electrode plates. The theory takes into account space-charge, recombination, and inhomogeneous ionization and it deals with three kinds of charge carriers with different mobilities (positive and negative ions, electrons). Terms due to diffusion and gas-flow losses are excluded. The equations so constructed were programmed to get a means of calculating the charge and field distributions and the current-voltage characteristics as functions of various parameters of the detectors, the attaching gas and the ionization. For two cases the results are given. (author)

  5. Current-voltage curves for molecular junctions computed using all-electron basis sets

    International Nuclear Information System (INIS)

    Bauschlicher, Charles W.; Lawson, John W.

    2006-01-01

    We present current-voltage (I-V) curves computed using all-electron basis sets on the conducting molecule. The all-electron results are very similar to previous results obtained using effective core potentials (ECP). A hybrid integration scheme is used that keeps the all-electron calculations cost competitive with respect to the ECP calculations. By neglecting the coupling of states to the contacts below a fixed energy cutoff, the density matrix for the core electrons can be evaluated analytically. The full density matrix is formed by adding this core contribution to the valence part that is evaluated numerically. Expanding the definition of the core in the all-electron calculations significantly reduces the computational effort and, up to biases of about 2 V, the results are very similar to those obtained using more rigorous approaches. The convergence of the I-V curves and transmission coefficients with respect to basis set is discussed. The addition of diffuse functions is critical in approaching basis set completeness

  6. Power electronic solutions for interfacing offshore wind turbine generators to medium voltage DC collection grids

    Science.gov (United States)

    Daniel, Michael T.

    Here in the early 21st century humanity is continuing to seek improved quality of life for citizens throughout the world. This global advancement is providing more people than ever with access to state-of-the-art services in areas such as transportation, entertainment, computing, communication, and so on. Providing these services to an ever-growing population while considering the constraints levied by continuing climate change will require new frontiers of clean energy to be developed. At the time of this writing, offshore wind has been proven as both a politically and economically agreeable source of clean, sustainable energy by northern European nations with many wind farms deployed in the North, Baltic, and Irish Seas. Modern offshore wind farms are equipped with an electrical system within the farm itself to aggregate the energy from all turbines in the farm before it is transmitted to shore. This collection grid is traditionally a 3-phase medium voltage alternating current (MVAC) system. Due to reactive power and other practical constraints, it is preferable to use a medium voltage direct current (MVDC) collection grid when siting farms >150 km from shore. To date, no offshore wind farm features an MVDC collection grid. However, MVDC collection grids are expected to be deployed with future offshore wind farms as they are sited further out to sea. In this work it is assumed that many future offshore wind farms may utilize an MVDC collection grid to aggregate electrical energy generated by individual wind turbines. As such, this work presents both per-phase and per-pole power electronic converter systems suitable for interfacing individual wind turbines to such an MVDC collection grid. Both interfaces are shown to provide high input power factor at the wind turbine while providing DC output current to the MVDC grid. Common mode voltage stress and circulating currents are investigated, and mitigation strategies are provided for both interfaces. A power sharing

  7. Angle selective backscattered electron contrast in the low-voltage scanning electron microscope: Simulation and experiment for polymers

    Energy Technology Data Exchange (ETDEWEB)

    Wan, Q., E-mail: qwan2@sheffield.ac.uk [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Masters, R.C. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Lidzey, D. [Department of Physics and Astronomy, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Abrams, K.J. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Dapor, M. [European Centre for Theoretical Studies in Nuclear Physics and Related Areas (ECT-FBK) and Trento Institute for Fundamental Physics and Applications (TIFPA-INFN), via Sommarive 18, I-38123 Trento (Italy); Plenderleith, R.A. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Rimmer, S. [Department of Chemistry, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Claeyssens, F.; Rodenburg, C. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom)

    2016-12-15

    Recently developed detectors can deliver high resolution and high contrast images of nanostructured carbon based materials in low voltage scanning electron microscopes (LVSEM) with beam deceleration. Monte Carlo Simulations are also used to predict under which exact imaging conditions purely compositional contrast can be obtained and optimised. This allows the prediction of the electron signal intensity in angle selective conditions for back-scattered electron (BSE) imaging in LVSEM and compares it to experimental signals. Angle selective detection with a concentric back scattered (CBS) detector is considered in the model in the absence and presence of a deceleration field, respectively. The validity of the model prediction for both cases was tested experimentally for amorphous C and Cu and applied to complex nanostructured carbon based materials, namely a Poly(N-isopropylacrylamide)/Poly(ethylene glycol) Diacrylate (PNIPAM/PEGDA) semi-interpenetration network (IPN) and a Poly(3-hexylthiophene-2,5-diyl) (P3HT) film, to map nano-scale composition and crystallinity distribution by avoiding experimental imaging conditions that lead to a mixed topographical and compositional contrast - Highlights: • An optimised model for nano-scale analysis of beam sensitive materials by LVSEM. • Simulation and separation of composition and topography in a CBS detector. • Selective angle backscattered electron collection for mapping of polymers.

  8. Angle selective backscattered electron contrast in the low-voltage scanning electron microscope: Simulation and experiment for polymers

    International Nuclear Information System (INIS)

    Wan, Q.; Masters, R.C.; Lidzey, D.; Abrams, K.J.; Dapor, M.; Plenderleith, R.A.; Rimmer, S.; Claeyssens, F.; Rodenburg, C.

    2016-01-01

    Recently developed detectors can deliver high resolution and high contrast images of nanostructured carbon based materials in low voltage scanning electron microscopes (LVSEM) with beam deceleration. Monte Carlo Simulations are also used to predict under which exact imaging conditions purely compositional contrast can be obtained and optimised. This allows the prediction of the electron signal intensity in angle selective conditions for back-scattered electron (BSE) imaging in LVSEM and compares it to experimental signals. Angle selective detection with a concentric back scattered (CBS) detector is considered in the model in the absence and presence of a deceleration field, respectively. The validity of the model prediction for both cases was tested experimentally for amorphous C and Cu and applied to complex nanostructured carbon based materials, namely a Poly(N-isopropylacrylamide)/Poly(ethylene glycol) Diacrylate (PNIPAM/PEGDA) semi-interpenetration network (IPN) and a Poly(3-hexylthiophene-2,5-diyl) (P3HT) film, to map nano-scale composition and crystallinity distribution by avoiding experimental imaging conditions that lead to a mixed topographical and compositional contrast - Highlights: • An optimised model for nano-scale analysis of beam sensitive materials by LVSEM. • Simulation and separation of composition and topography in a CBS detector. • Selective angle backscattered electron collection for mapping of polymers.

  9. Optical model theory of elastic electron- and positron-atom scattering at intermediate energies

    International Nuclear Information System (INIS)

    Joachain, C.J.

    1977-01-01

    It is stated that the basic idea of the optical model theory is to enable analysis of the elastic scattering of a particle from a complex target by replacing the complicated interactions between the beam and the target by an optical potential, or pseudopotential, in which the incident particle moves. Once the optical potential is determined the original many-body elastic scattering problem reduces to a one-body situation. The resulting optical potential is, however, a very complicated operator, and the formal expressions obtained from first principles for the optical potential can only be evaluated approximately in a few simple cases, such as high energy elastic hadron-nucleus scattering, for the the optical potential can be expressed in terms of two-body hadron-nucleon amplitudes, and the non-relativistic elastic scattering of fast charged particles by atoms. The elastic scattering of an electron or positron by a neutral atom at intermediate energies is here considered. Exchange effects between the projectile and the atomic electrons are considered; also absorption and polarisation effects. Applications of the full-wave optical model have so far only been made to the elastic scattering of fast electrons and positrons by atomic H, He, Ne, and Ar. Agreements of the optical model results with absolute measurements of differential cross sections for electron scattering are very good, an agreement that improves as the energy increases, but deteriorates quickly as the incident energy becomes lower than 50 eV for atomic H or 100 eV for He. For more complex atoms the optical model calculations also appear very encouraging. With regard to positron-atom elastic scattering the optical model results for positron-He scattering differ markedly at small angles from the corresponding electron-He values. It would be interesting to have experimental angular distributions of positron-atom elastic scattering in order to check predictions of the optical model theory. (U.K.)

  10. An accurate on-site calibration system for electronic voltage transformers using a standard capacitor

    Science.gov (United States)

    Hu, Chen; Chen, Mian-zhou; Li, Hong-bin; Zhang, Zhu; Jiao, Yang; Shao, Haiming

    2018-05-01

    Ordinarily electronic voltage transformers (EVTs) are calibrated off-line and the calibration procedure requires complex switching operations, which will influence the reliability of the power grid and induce large economic losses. To overcome this problem, this paper investigates a 110 kV on-site calibration system for EVTs, including a standard channel, a calibrated channel and a PC equipped with the LabView environment. The standard channel employs a standard capacitor and an analogue integrating circuit to reconstruct the primary voltage signal. Moreover, an adaptive full-phase discrete Fourier transform (DFT) algorithm is proposed to extract electrical parameters. The algorithm involves the process of extracting the frequency of the grid, adjusting the operation points, and calculating the results using DFT. In addition, an insulated automatic lifting device is designed to realize the live connection of the standard capacitor, which is driven by a wireless remote controller. A performance test of the capacitor verifies the accurateness of the standard capacitor. A system calibration test shows that the system ratio error is less than 0.04% and the phase error is below 2‧, which meets the requirement of the 0.2 accuracy class. Finally, the developed calibration system was used in a substation, and the field test data validates the availability of the system.

  11. Electron microscopy of intermediate filaments: teaming up with atomic force and confocal laser scanning microscopy.

    Science.gov (United States)

    Kreplak, Laurent; Richter, Karsten; Aebi, Ueli; Herrmann, Harald

    2008-01-01

    Intermediate filaments (IFs) were originally discovered and defined by electron microscopy in myoblasts. In the following it was demonstrated and confirmed that they constitute, in addition to microtubules and microfilaments, a third independent, general filament system in the cytoplasm of most metazoan cells. In contrast to the other two systems, IFs are present in cells in two principally distinct cytoskeletal forms: (i) extended and free-running filament arrays in the cytoplasm that are integrated into the cytoskeleton by associated proteins of the plakin type; and (ii) a membrane- and chromatin-bound thin 'lamina' of a more or less regular network of interconnected filaments made from nuclear IF proteins, the lamins, which differ in several important structural aspects from cytoplasmic IF proteins. In man, more than 65 genes code for distinct IF proteins that are expressed during embryogenesis in various routes of differentiation in a tightly controlled manner. IF proteins exhibit rather limited sequence identity implying that the different types of IFs have distinct biochemical properties. Hence, to characterize the structural properties of the various IFs, in vitro assembly regimes have been developed in combination with different visualization methods such as transmission electron microscopy of fixed and negatively stained samples as well as methods that do not use staining such as scanning transmission electron microscopy (STEM) and cryoelectron microscopy as well as atomic force microscopy. Moreover, with the generation of both IF-type specific antibodies and chimeras of fluorescent proteins and IF proteins, it has become possible to investigate the subcellular organization of IFs by correlative fluorescence and electron microscopic methods. The combination of these powerful methods should help to further develop our understanding of nuclear architecture, in particular how nuclear subcompartments are organized and in which way lamins are involved.

  12. Electron radiation damage of metals and nature of point defects by high voltage electron microscopy

    International Nuclear Information System (INIS)

    Kiritani, M.

    1975-01-01

    The formation of point defect clusters by electron irradiation in a variety of metals (Al, Au, Cu, Fe, Ni, Mo, Pt, W) in a wide range of temperatures 10 to 1000 0 K are observed. A unified explanation is given for their nucleation and growth from the viewpoint of the migration and interaction of point defects. The effect of free surfaces and other permanent sinks are examined. Analysis of the systematic variation of the nucleation of interstitial clustered defects lead to confirm the free migration of interstitials with fairly small activation energies. Their apparent values obtained from the impurity sensitive nucleation at medium temperatures are 0.08 (Al), 0.19 (Au), 0.26 (Fe), 0.18 (Mo) and 0.21 eV (W), and their values obtained from low temperature irradiation are 0.03 (Al), 0.04 (Au) and 0.05 eV (Mo). The trapping of interstitials by foreign atoms and heterogeneous effects on nucleation of interstitial clusters are discussed

  13. High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

    International Nuclear Information System (INIS)

    Tanaka, Masaki; Higashida, Kenji

    2005-01-01

    Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals

  14. Electron emission of cathode holder of vacuum diode of an intense electron-beam accelerator and its effect on the output voltage

    OpenAIRE

    Xin-Bing Cheng; Jin-Liang Liu; Hong-Bo Zhang; Zhi-Qiang Hong; Bao-Liang Qian

    2011-01-01

    The vacuum diode which is used to generate relativistic electron beams is one of the most important parts of a pulsed-power modulator. In this paper, the electron emission of cathode holder of a vacuum diode and its effect on the output voltage is investigated by experiments on an intense electron-beam accelerator with 180 ns full width at half maximum and 200–500 kV output voltage. First, the field emission is analyzed and the electric field of the vacuum chamber is calculated. Then, the fla...

  15. Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

    Energy Technology Data Exchange (ETDEWEB)

    Chao, Jin Yu [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Yuan, Zhi Guo, E-mail: ncityzg@163.com [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China)

    2015-12-21

    Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

  16. Investigation on the energy spectrums of electrons in atmospheric pressure argon plasma jets and their dependences on the applied voltage

    Science.gov (United States)

    Chen, Xinxian; Tan, Zhenyu; Liu, Yadi; Li, Xiaotong; Pan, Jie; Wang, Xiaolong

    2017-08-01

    This work presents a systematical investigation on the spatiotemporal evolution of the energy spectrum of electrons in atmospheric pressure argon plasma jets and its dependence on the applied voltage. The investigations are carried out by means of the numerical simulation based on a particle-in-cell Monte-Carlo collision model. The characteristics of the spatiotemporal evolution of the energy spectrum of electrons (ESE) in the discharge space have been presented, and especially the mechanisms of inducing these characteristics have also been revealed. The present work shows the following conclusions. In the evolution of ESE, there is a characteristic time under each applied voltage. Before the characteristic time, the peak value of ESE decreases, the peak position shifts toward high energy, and the distribution of ESE becomes wider and wider, but the reverse is true after the characteristic time. The formation of these characteristics can be mainly attributed to the transport of electrons toward a low electric field as well as a balance between the energy gained from the electric field including the effect of space charges and the energy loss due to inelastic collisions in the process of electron transport. The characteristic time decreases with the applied voltage. In addition, the average energy of electrons at the characteristic time can be increased by enhancing the applied voltage. The results presented in this work are of importance for regulating and controlling the energy of electrons in the plasma jets applied to plasma medicine.

  17. Properties of an intermediate-duration inactivation process of the voltage-gated sodium conductance in rat hippocampal CA1 neurons.

    Science.gov (United States)

    French, Christopher R; Zeng, Zhen; Williams, David A; Hill-Yardin, Elisa L; O'Brien, Terence J

    2016-02-01

    Rapid transmembrane flow of sodium ions produces the depolarizing phase of action potentials (APs) in most excitable tissue through voltage-gated sodium channels (NaV). Macroscopic currents display rapid activation followed by fast inactivation (IF) within milliseconds. Slow inactivation (IS) has been subsequently observed in several preparations including neuronal tissues. IS serves important physiological functions, but the kinetic properties are incompletely characterized, especially the operative timescales. Here we present evidence for an "intermediate inactivation" (II) process in rat hippocampal CA1 neurons with time constants of the order of 100 ms. The half-inactivation potentials (V0.5) of steady-state inactivation curves were hyperpolarized by increasing conditioning pulse duration from 50 to 500 ms and could be described by a sum of Boltzmann relations. II state transitions were observed after opening as well as subthreshold potentials. Entry into II after opening was relatively insensitive to membrane potential, and recovery of II became more rapid at hyperpolarized potentials. Removal of fast inactivation with cytoplasmic papaine revealed time constants of INa decay corresponding to II and IS with long depolarizations. Dynamic clamp revealed attenuation of trains of APs over the 10(2)-ms timescale, suggesting a functional role of II in repetitive firing accommodation. These experimental findings could be reproduced with a five-state Markov model. It is likely that II affects important aspects of hippocampal neuron response and may provide a drug target for sodium channel modulation. Copyright © 2016 the American Physiological Society.

  18. Tunable valley polarization by a gate voltage when an electron tunnels through multiple line defects in graphene.

    Science.gov (United States)

    Liu, Zhe; Jiang, Liwei; Zheng, Yisong

    2015-02-04

    By means of an appropriate wave function connection condition, we study the electronic structure of a line defect superlattice of graphene with the Dirac equation method. We obtain the analytical dispersion relation, which can simulate well the tight-binding numerical result about the band structure of the superlattice. Then, we generalize this theoretical method to study the electronic transmission through a potential barrier where multiple line defects are periodically patterned. We find that there exists a critical incident angle which restricts the electronic transmission through multiple line defects within a specific incident angle range. The critical angle depends sensitively on the potential barrier height, which can be modulated by a gate voltage. As a result, non-trivial transmissions of K and K' valley electrons are restricted, respectively, in two distinct ranges of the incident angle. Our theoretical result demonstrates that a gate voltage can act as a feasible measure to tune the valley polarization when electrons tunnel through multiple line defects.

  19. Module Seven: Combination Circuits and Voltage Dividers; Basic Electricity and Electronics Individualized Learning System.

    Science.gov (United States)

    Bureau of Naval Personnel, Washington, DC.

    In this module the student will learn to apply the rules previously learned for series and parallel circuits to more complex circuits called series-parallel circuits, discover the utility of a common reference when making reference to voltage values, and learn how to obtain a required voltage from a voltage divider network. The module is divided…

  20. Design and construction of constant voltage and current regulated source with proper characteristics to be used in electronics laboratory designs

    International Nuclear Information System (INIS)

    Peon A, R.

    1978-01-01

    A regulated direct current feeding source was designed for the Nuclear Energy National Institute Electronics Labortory, with the following characteristics: a) voltage input 105-130V a.c. 50-60 Hz; b) voltage output 0.40 V d.c.; c) output current 0-2 Amp d.c.; d) load regulation 0.001%; e) line regulation 0.001%; f) ripple and noise 200 μ Vpp; g) temperature interval 3-60 0 C; h) stability 0.5%; i) output impedance as voltage source 0.01 ohms; j) transient response 50 μ seg. Besides of operating normally, that is as voltage source or current-source through the front controls, the source can be used and interconnected with one or other compatible sources (autoseries, autoparallel and programmed reference). The source will cost 70,000 pesos approximately. (author)

  1. Generation of low KV x-ray portal images with mega-voltage electron beams

    International Nuclear Information System (INIS)

    Kenny, J.; Ebert, M.

    2004-01-01

    Full text: The increasing complexity of radiation therapy plans and reduced target margins, have made accurate localization of patients at treatment a crucial quality assurance issue. Mega-voltage portal images, the standard for treatment localization, are inherently low in contrast because x-ray attenuation at these energies is similar for most body tissues. Thus anatomical features are difficult to distinguish and match to features on a reference diagnostic image. This project investigates the possibly of using x-rays created by an external target placed in the path of a clinical mega-voltage electron beam. This target is optimised to produce a higher proportion of useful imaging x-rays in the range of 50-200kV. It is thought that a high efficiency Varian aSi500 amorphous silicon EPID will be sufficient to compensate for the very low efficiency of x-ray production. The project was undertaken with concurrent theoretical and experimental components. The former involved Monte Carlo models of low Z target design while in the later, experimental data was gathered to validate the model and explore the practical issues associated with electron mode image acquisition. A 6 MeV electron beam model for a Varian Clinac 21EX was developed with EGS4/BEAMnrc User Code and compared to measured beam data. Phase space data scored at the secondary collimator then became the input for simulations of a target placed in the accessory tray. Target materials were predominately low atomic number (Z) because a) production of high energy x-rays is minimized and, b) fewer low energy x-rays produced will be absorbed within the target. Photon and electron energy spectrums of the modified beam were evaluated for a range of target geometries. Ultimately, several materials were used in combination to optimise an x-ray yield for energies <200kV while removing electrons and very low energy x-rays, that contribute to patient dose but not to image formation. Low energy images of a PIPs EPID QA

  2. Experiments in high voltage electron microscopy. Progress report, October 31, 1976--August 1977

    International Nuclear Information System (INIS)

    Mitchell, T.E.; Hobbs, L.W.; Howitt, D.G.; Barnard, R.; Ro, H.

    1977-07-01

    High voltage electron microscopy (HVEM) is being used to study the effects of irradiation on a variety of materials. The vacancies and interstitials produced by displacement can aggregate to form dislocation loops and voids, annihilate at sinks, or enhance various diffusion processes such as precipitation and recrystallization. Threshold displacement energies, E/sub d/, have been determined for a number of fcc, bcc and hcp metals and for various oxides. In MgO, E/sub d/ is less along (100) than (110); also, E/sub d/ decreases with increasing temperature, possibly due to thermally activated escape of interstitials from recombination volumes or softening of saddle points. The effects of electron irradiation on precipitation in Al--Cu, Al--Si and Ni--Al alloys have been investigated. Precipitation respectively of theta', Si and γ' is enhanced and growth rates are explicable in terms of theories of radiation-enhanced diffusion, with D/sub rad/ approx. 10 -15 cm 2 sec -1 . In oxides, damage gives rise to interstitial dislocation loop nucleation and growth in all cases, perfect [110] loops in MgO faulted basal and prismatic loops in Al 2 O 3 . Quantitative analysis of loop growth rates in MgO gives a migration energy of 3.3 eV for anion vacancies. Other radiation effects include sublimation of MgO and decomposition of MgAl 2 O 4 and Mg 2 SiO 4 into MgO plus other phases

  3. In-situ observation of the alpha/beta cristobalite transition using high voltage electron microscopy

    International Nuclear Information System (INIS)

    Meike, A.; Glassley, W.

    1989-10-01

    A high temperature water vapor phase is expected to persist in the vicinity of high level radioactive waste packages for several hundreds of years. The authors have begun an investigation of the structural and chemical effects of water on cristobalite because of its abundance in the near field environment. A high voltage transmission electron microscope (HVEM) investigation of bulk synthesized α-cristobalite to be used in single phase dissolution and precipitation kinetics experiments revealed the presence β-cristobalite, quartz and amorphous silica, in addition to α-cristobalite. Consequently, this apparent metastable persistence of β-cristobalite and amorphous silica during the synthesis of α-cristobalite was investigated using a heating stage and an environmental cell installed in the HVEM that allowed the introduction of either dry CO 2 or a CO 2 + H 2 O vapor. Preliminary electron diffraction evidence suggests that the presence of water vapor affected the α-β transition temperature. Water vapor may also be responsible for the development of an amorphous silica phase at the transition that may persist over an interval of several tens of degrees. The amorphous phase was not documented during the dry heating experiments. 20 refs., 7 figs., 5 tabs

  4. In-situ observation of the alpha/beta cristobalite transition using high voltage electron microscopy

    International Nuclear Information System (INIS)

    Meike, A.; Glassley, W.E.

    1990-01-01

    A high temperature water vapor phase is expected to persist in the vicinity of high level radioactive waste packages for several hundreds of years. The authors have begun an investigation of the structural and chemical effects of water on cristobalite because of its abundance in the near field environment. A high voltage transmission electron microscope (HVEM) investigation of bulk synthesized α-cristobalite to be used in single phase dissolution and precipitation kinetics experiments revealed the presence β-cristobalite, quartz and amorphous silica, in addition to α-cristobalite. Consequently, this apparent metastable persistence of β-cristobalite and amorphous silica during the synthesis of α-cristobalite was investigated using a heating stage and an environmental cell installed in the HVEM that allowed the introduction of either dry CO 2 or a CO 2 + H 2 O vapor. Preliminary electron diffraction evidence suggests that the presence of water vapor affected the α-β transition temperature. Water vapor may also be responsible for the development of an amorphous silica phase at the transition that may persist over an interval of several tens of degrees. The amorphous phase was not documented during the dry heating experiments

  5. Experiments in high voltage electron microscopy. Progress report, October 31, 1975--August 1976

    International Nuclear Information System (INIS)

    Mitchell, T.E.; Das, G.; Barnard, R.; Ro, D.

    1976-08-01

    High voltage electron microscopy (HVEM) is being used to study the effects of irradiation on a variety of materials. The vacancies and interstitials produced by displacement can agglomerate to form dislocation loops and voids, annihilate at sinks, or enhance various diffusion processes such as precipitation and recrystallization. Threshold displacement energies, E/sub d/, have been determined for a number of fcc, bcc, and hcp metals. Directions for minimum E/sub d/ have been correlated with the crystal structure and the magnitude of E/sub d/ has been related to the sublimation energy. The effects of electron irradiation on precipitation in Al--Cu, Al--Si and Ni--Al alloys have been investigated. Precipitation respectively of theta', Si and γ' is enhanced and growth rates are being related quantitatively to theories of radiation-enhanced diffusion. Results on radiation damage in oxides (quartz, alumina, and magnesia) have also been obtained. Displacement damage gives rise to dislocation loop nucleation and growth in all cases, including multi-layer loops in Al 2 O 3 . In SiO 2 , ionization damage also occurs, which destroys the crystallinity. Threshold displacement and temperature effects have also been investigated

  6. Electron emission of cathode holder of vacuum diode of an intense electron-beam accelerator and its effect on the output voltage

    Directory of Open Access Journals (Sweden)

    Xin-Bing Cheng

    2011-04-01

    Full Text Available The vacuum diode which is used to generate relativistic electron beams is one of the most important parts of a pulsed-power modulator. In this paper, the electron emission of cathode holder of a vacuum diode and its effect on the output voltage is investigated by experiments on an intense electron-beam accelerator with 180 ns full width at half maximum and 200–500 kV output voltage. First, the field emission is analyzed and the electric field of the vacuum chamber is calculated. Then, the flatness of the output voltage is discussed before and after adding an insulation plate when a water load is used. It is found that the electron emission at the edges of the cathode holder is the main reason to cause the change of the flatness. Last, a piece of polyester film is used as a target to further show the electron emission of the cathode holder. This analysis shows that decreasing the electron emission of the cathode holder in such a pulse power modulator could be a good way to improve the quality of the output voltage.

  7. Electron-positron pair production and bremsstrahlung at intermediate energies in the field of heavy atoms

    International Nuclear Information System (INIS)

    Lee, R.N.; Milstein, A.I.; Strakhovenko, V.M.; Schwartz, O.Ya.

    2006-01-01

    The Coulomb corrections (CC) to the processes of bremsstrahlung and pair production are investigated. The next-to-leading term in the high-energy asymptotics is found. This term becomes very essential in the region of intermediate energies. The influence of screening for CC is small for differential cross section, spectrum, and the total cross section of pair production. The same is true for the spectrum of bremsstrahlung, but not for the differential cross section, where the influence of screening can be very large. The corresponding screening corrections as well as the modification of the differential cross section of bremsstrahlung are found. A comparison of our results for the total cross section of pair production with the experimental data available is performed. This comparison has justified our analytical results and allowed to elaborate a simple ansatz for the next-to-leading correction. The influence of the electron beam shape on CC for bremsstrahlung is investigated. It turns out that the differential cross section is very sensitive to this shape

  8. Warfarin traps human vitamin K epoxide reductase in an intermediate state during electron transfer

    Science.gov (United States)

    Shen, Guomin; Cui, Weidong; Zhang, Hao; Zhou, Fengbo; Huang, Wei; Liu, Qian; Yang, Yihu; Li, Shuang; Bowman, Gregory R.; Sadler, J. Evan; Gross, Michael L.; Li, Weikai

    2017-01-01

    Although warfarin is the most widely used anticoagulant worldwide, the mechanism by which warfarin inhibits its target, human vitamin K epoxide reductase (hVKOR), remains unclear. Here we show that warfarin blocks a dynamic electron-transfer process in hVKOR. A major fraction of cellular hVKOR is at an intermediate redox state of this process containing a Cys51-Cys132 disulfide, a characteristic accommodated by a four-transmembrane-helix structure of hVKOR. Warfarin selectively inhibits this major cellular form of hVKOR, whereas disruption of the Cys51-Cys132 disulfide impairs warfarin binding and causes warfarin resistance. Relying on binding interactions identified by cysteine alkylation footprinting and mass spectrometry coupled with mutagenesis analysis, we are able to conduct structure simulations to reveal a closed warfarin-binding pocket stabilized by the Cys51-Cys132 linkage. Understanding the selective warfarin inhibition of a specific redox state of hVKOR should enable the rational design of drugs that exploit the redox chemistry and associated conformational changes in hVKOR. PMID:27918545

  9. The destruction of parasitic resistant stages in sewage sludge by irradiation with low accelerating voltage electrons

    International Nuclear Information System (INIS)

    Enigk, K.; Holl, P.; Dey-Hazra, A.; Polymer-Physik G.m.b.H. und Co. K.G., Tuebingen

    1975-01-01

    The destroying effect of ionizing radiation on parasitic resistant stages in sludge has been tested. Suitable for that process is an electron beam accelerator which will be provided with energy from the electric power supply network which can be switched on and off according to the requirements. Such modern utilities have an enormous beam capacity and a high operating safety. The process is working according to the continuous flow principle and at room temperature. In a series of 13 experiments the effect of different doses has been tested. A dose of 480 kRad (accelerating voltage: 400 kV, beam current: 10 mA , irradiation time: 24 sec.) can easily obtained in practical work and is economically acceptable. By these means approximately 97% of the following parasitic stages have been destroyed: undeveloped eggs of Ascaris suum, Trichuris suis, Fasciola hepatica and gastrointestinal strongylids of pigs, embryonated eggs of Capillaria obsignata and probably of Taenia spec. A few third-stage larvae of Oesophagostomum (Strongylidae) of pigs survived even 108 sec of irradiation; however, they did not develop to maturity in the definitive host. Approximately 25% of the sporulated oocysts of Eimeria tenella were still infective after 108 sec of irradiation. (orig.) [de

  10. An ultra-low-voltage electronic implementation of inertial neuron model with nonmonotonous Liao's activation function.

    Science.gov (United States)

    Kant, Nasir Ali; Dar, Mohamad Rafiq; Khanday, Farooq Ahmad

    2015-01-01

    The output of every neuron in neural network is specified by the employed activation function (AF) and therefore forms the heart of neural networks. As far as the design of artificial neural networks (ANNs) is concerned, hardware approach is preferred over software one because it promises the full utilization of the application potential of ANNs. Therefore, besides some arithmetic blocks, designing AF in hardware is the most important for designing ANN. While attempting to design the AF in hardware, the designs should be compatible with the modern Very Large Scale Integration (VLSI) design techniques. In this regard, the implemented designs should: only be in Metal Oxide Semiconductor (MOS) technology in order to be compatible with the digital designs, provide electronic tunability feature, and be able to operate at ultra-low voltage. Companding is one of the promising circuit design techniques for achieving these goals. In this paper, 0.5 V design of Liao's AF using sinh-domain technique is introduced. Furthermore, the function is tested by implementing inertial neuron model. The performance of the AF and inertial neuron model have been evaluated through simulation results, using the PSPICE software with the MOS transistor models provided by the 0.18-μm Taiwan Semiconductor Manufacturer Complementary Metal Oxide Semiconductor (TSM CMOS) process.

  11. High voltage power supply systems for electron beam and plasma technologies. Its new element base

    International Nuclear Information System (INIS)

    Dermengi, P.G.; Kureghan, A.S.; Pokrovsky, S.V.; Tchvanov, V.A.

    1994-01-01

    Transforming technique and high voltage technique supplementing each other more and more unite in indivisible constructions of modern apparatuses and systems and applicated in modern technologies providing its high efficiency. Specially worked out, ecologically clean, inertial, inflammable perfluororganic liquid is used in elements and electronic apparatuses simultaneously as insulating and cooling media. This liquid is highly fluid, fills tiny cavities in construction elements and in the places of high concentration of losses, where maximum local overheating of active parts or apparatus constructions takes place, it transforms to boiling state with highly intensive taking off of heat energy from cooled surface point. For instance, being cooled by mentioned perfluororganic liquid, copper wire can conduct current to 50 A/mm 2 density, but in ordinary conditions of transformers, reactors and busses, current density can reach only few Amperes. Possibility of considerable increasing of current density, that is reached by means of intensive cooling, provided by worked out liquid, and taking into account its incredibly high insulating features (liquid has electric strength to 50 KV/mm) allows to provide optimum heat regime of active parts of transformers. reactors, condenser, semiconductor devices, resistors, construction elements and electrotechnical apparatus in general. Particularly high effect of decreasing of weight and dimensions characteristics of elements and electrotechnical apparatus in general can be reached under working out of special constructions of each element and apparatus details, adapted to use of mentioned liquid as insulating and cooling media

  12. The energy-deposition model. Electron loss of heavy ions in collisions with neutral atoms at low and intermediate energies

    International Nuclear Information System (INIS)

    Shevelko, V.P.; Litsarev, M.S.; Kato, D.; Tawara, H.

    2010-09-01

    Single- and multiple-electron loss processes in collisions of heavy many-electron ions (positive and negative) in collisions with neutral atoms at low and intermediate energies are considered using the energy-deposition model. The DEPOSIT computer code, created earlier to calculate electron-loss cross sections at high projectile energies, is extended for low and intermediate energies. A description of a new version of DEPOSIT code is given, and the limits of validity for collision velocity in the model are discussed. Calculated electron-loss cross sections for heavy ions and atoms (N + , Ar + , Xe + , U + , U 28+ , W, W + , Ge - , Au - ), colliding with neutral atoms (He, Ne, Ar, W) are compared with available experimental and theoretical data at energies E > 10 keV/u. It is found that in most cases the agreement between experimental data and the present model is within a factor of 2. Combining results obtained by the DEPOSIT code at low and intermediate energies with those by the LOSS-R code at high energies (relativistic Born approximation), recommended electron-loss cross sections in a wide range of collision energy are presented. (author)

  13. Compositional redistribution in alloy films under high-voltage electron microscope irradiation

    Science.gov (United States)

    Lam, Nghi Q.; Leaf, O. K.; Minkoff, M.

    1983-10-01

    The problem of nonequilibrium segregation in alloy films under high-voltage electron microscope (HVEM) irradiation at elevated temperatures is re-examined in the present work, taking into account the damage-rate gradients caused by radial variation in the electron flux. Axial and radial compositional redistributions in model solid solutions, representative of concentrated Ni-Cu, Ni-Al and Ni-Si alloys, were calculated as a function of time, temperature, and film thickness, using a kinetic theory of segregation in binary alloys. The numerical results were achieved by means of a new software package (DISPL2) for solving convection-diffusion-kinetics problems with general orthogonal geometries. It was found that HVEM irradiation-induced segregation in thin films consists of two stages. Initially, due to the proximity of the film surfaces as sinks for point defects, the usual axial segregation (to surfaces) occurs at relatively short irradiation times, and rapidly attains quasi-steady state. Then, radial segregation becomes more and more competitive, gradually affecting the kinetics of axial segregation. At a given temperature, the buildup time to steady state is much longer in the present situation than in the simple case of one-dimensional segregation with uniform defect production. Changes in the alloy composition occur in a much larger zone than the irradiated volume. As a result, the average alloy composition within the irradiated region can differ greatly from that of the unirradiated alloy. The present calculations may be useful in the interpretation of the kinetics of certain HVEM irradiation-induced processes in alloys.

  14. A Protection System of High Voltage Generator Electron Acceleration foran Electron Beam Machine 500 kV/10 mA

    International Nuclear Information System (INIS)

    Prajitno; Sudiyanto; Djaziman

    2000-01-01

    Hardwired electronic circuit of protection system to prevent high voltagegenerator EBM have been made. The protection system consists of processparameters such as safety parameter, dynamic logic circuits and interlockrelay drive circuits. Safety parameters using transducer which is factorymade so that the accuracy and reliability could be controlled. A good resultof electronic circuit has been tested which cover: water flow and temperaturemonitoring, grid current, anode current, anode voltage and logic control. Therange of monitoring temperature from 30 o C to 100 o C with output voltagefrom 1.47 V to 5.38 V. The voltage output of water flow monitoring is 0.083 Vto 3.391 V which is equivalent to 1.5 - 30 l/min. Response time of the logiccontrol about 10 ms. By using design and construction of protection system,have been through about the security aspect of high voltage generatoroperation and also system will give early warning if the disturbance andabnormal operation occurred. (author)

  15. Studies of dislocation loops produced by irradiation of ZnO in a high-voltage electron microscope

    International Nuclear Information System (INIS)

    Yoshiie, T.; Iwanaga, H.; Shibata, N.; Suzuki, K.; Takeuchi, S.

    1980-01-01

    Electron-irradiation studies on vapour-grown ZnO ribbon crystals have been carried out in situ in a high-voltage electron microscope. Dislocation loops nucleate both on stacking-fault planes and in the matrix by irradiation with electron accelerated through voltages higher than 700 kV at room temperature. Two types of loops with the Burgers vectors b=1/2c and b=a exist in the matrix, where a=1/3 and c=[0001]. On the other hand, loops with b=1/2c+a/3 and those with b=1/2c are formed on the prismatic fault planes and basal fault planes, respectively. Diffraction-contrast experiments show these loops to be of interstitial type. A re-irradiation experiment after the annealing indicates a possibility that there exist vacancies in the matrix at 700 0 C. (author)

  16. Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

    Science.gov (United States)

    Bureau of Naval Personnel, Washington, DC.

    This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

  17. Estimation of visibility of phase contrast with extraction voltages for field emission gun electron microscopes

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Xing, E-mail: xmeng101@gmail.com

    2017-02-15

    Estimation was made for visibility of phase contrast with varying extraction voltages. The resulting decay rates of visibility show that images with low image contrast from cryo EM will be seriously impacted with high extraction voltages. - Highlights: • Cryo EM • Phase contrast • Extraction votage.

  18. Operation Manual of the high voltage generator of the Pelletron electron accelerator; Manual de operacion del generador de alto voltaje del acelerador de electrones Pelletron

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez M, V; Lopez V, H; Alba P, U

    1988-04-15

    The first version of a manual to operate the generator of high voltage generator of the Pelletron electron accelerator built in the ININ is presented. Since this generator has several components and/or elements, the one manual present has the purpose that the armed one or maintenance of anyone on its parts, is carried out in an orderly and efficient way. (Author)

  19. Three-Input Single-Output Voltage-Mode Multifunction Filter with Electronic Controllability Based on Single Commercially Available IC

    Directory of Open Access Journals (Sweden)

    Supachai Klungtong

    2017-01-01

    Full Text Available This paper presents a second-order voltage-mode filter with three inputs and single-output voltage using single commercially available IC, one resistor, and two capacitors. The used commercially available IC, called LT1228, is manufactured by Linear Technology Corporation. The proposed filter is based on parallel RLC circuit. The filter provides five output filter responses, namely, band-pass (BP, band-reject (BR, low-pass (LP, high-pass (HP, and all-pass (AP functions. The selection of each filter response can be done without the requirement of active and passive component matching condition. Furthermore, the natural frequency and quality factor are electronically controlled. Besides, the nonideal case is also investigated. The output voltage node exhibits low impedance. The experimental results can validate the theoretical analyses.

  20. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    International Nuclear Information System (INIS)

    Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

    2016-01-01

    The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

  1. Improving the output voltage waveform of an intense electron-beam accelerator based on helical type Blumlein pulse forming line

    Directory of Open Access Journals (Sweden)

    Xin-Bing Cheng

    2010-07-01

    Full Text Available The Blumlein pulse forming line (BPFL consisting of an inner coaxial pulse forming line (PFL and an outer coaxial PFL is widely used in the field of pulsed power, especially for intense electron-beam accelerators (IEBA. The output voltage waveform determines the quality and characteristics of the output beam current of the IEBA. Comparing with the conventional BPFL, an IEBA based on a helical type BPFL can increase the duration of the output voltage in the same geometrical volume. However, for the helical type BPFL, the voltage waveform on a matched load may be distorted which influences the electron-beam quality. In this paper, an IEBA based on helical type BPFL is studied theoretically. Based on telegrapher equations of the BPFL, a formula for the output voltage of IEBA is obtained when the transition section is taken into account, where the transition section is between the middle cylinder of BPFL and the load. From the theoretical analysis, it is found that the wave impedance and transit time of the transition section influence considerably the main pulse voltage waveform at the load, a step is formed in front of the main pulse, and a sharp spike is also formed at the end of the main pulse. In order to get a well-shaped square waveform at the load and to improve the electron-beam quality of such an accelerator, the wave impedance of the transition section should be equal to that of the inner PFL of helical type BPFL and the transit time of the transition section should be designed as short as possible. Experiments performed on an IEBA with the helical type BPFL show reasonable agreement with theoretical analysis.

  2. Development of novel low-voltage free-electron lasers in the 5-500GHz region

    International Nuclear Information System (INIS)

    Zhong, Xiehe

    2002-01-01

    The electromagnetic spectrum from 5GHz to 500GHz is important for many industrial, commercial, and scientific applications. In particular for the 100 - 500GHz region, free electron lasers (FELs) are usually the only viable radiation sources with sizeable output power and as such are an attractive enabling technology for many applications. One major issue for widespread application of free electron lasers is to reduce their cost and size. This is particularly challenging because of the expensive electron accelerator system they employ. To make it significantly more attractive economically for many important applications, the electron energy has to be reduced to below 300keV. In this thesis two novel electron-energy-reduction techniques are investigated for FEL systems operated in the spectrum from 5GHz to 500GHz with the development of a suite of suitable FEL codes. In the microwave to millimetre-wave region, a novel energy reduction technique based on second harmonic waveguide FELs is studied. It is shown that the required electron voltage is approximately half of what is normally required for comparable conventional waveguide FELs. Effect of electron energy spread is studied for second harmonic waveguide FELs both in microwave and millimetre-wave regions. It is shown that strong wiggler field enhances electron hunching thereby increasing the small-signal gain as well as the insusceptibility to electron voltage spread. Saturation behaviour of second harmonic waveguide FELs is also studied because it is important for evaluation of output power. For FEL generation above 300GHz, it is found that second harmonic waveguide FELs need to increase electron energy above 300keV. To this end, a second energy reduction technique is considered based on a novel quasiperiodic wiggler. It is established that by changing the initial phase angle between the two component wigglers, strong radiation can be generated near 1THz with electron energy below 300keV. (author)

  3. Sharing of secondary electrons by in-lens and out-lens detector in low-voltage scanning electron microscope equipped with immersion lens.

    Science.gov (United States)

    Kumagai, Kazuhiro; Sekiguchi, Takashi

    2009-03-01

    To understand secondary electron (SE) image formation with in-lens and out-lens detector in low-voltage scanning electron microscopy (LV-SEM), we have evaluated SE signals of an in-lens and an out-lens detector in LV-SEM. From the energy distribution spectra of SEs with various boosting voltages of the immersion lens system, we revealed that the electrostatic field of the immersion lens mainly collects electrons with energy lower than 40eV, acting as a low-pass filter. This effect is also observed as a contrast change in LV-SEM images taken by in-lens and out-lens detectors.

  4. An improved control method of power electronic converters in low voltage micro-grid

    DEFF Research Database (Denmark)

    Xiaofeng, Sun; Qingqiu, Lv; Yanjun, Tian

    2011-01-01

    control of the voltage and frequency deviation added to power references could achieve secondary regulation of the voltage and frequency. In this paper, the authors take the steady and transient transition of grid connecting and disconnecting of the micro-grid as an example, and demonstrate......With the increasing acceptance, micro-grid, combined with distributed generation (DG), may be operated in two modes: grid-connected mode and island mode. In grid connected mode, energy management is the control objective. While in island mode, the control of Voltage and frequency will take...... the place. The conventional droop control can perform the energy management in grid-connected mode, but may not so effective when micro-grid transferring between grid-connected mode and island mode. The paper analysis the micro-grid in different modes (Conventional droop control, Voltage reference...

  5. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...... a broad tunnelling current-overpotential range at a constant (large) bias voltage of +0.2 V. The current is found to be constant over a 0.25 V overpotential range, which covers roughly the range where the oxidised and reduced redox levels are located within the energy tip. STM contrast and apparent...... of previous theoretical work on in situ STM of redox molecules, to large bias voltages, \\eV(bias)\\ > E-r. Large bias voltages give tunnelling contrasts independent of the overpotential over a broad range, as both the oxidised and reduced redox levels are located within the 'energy tip' between the substrate...

  6. Theoretical treatment of electron capture and excitation in two-electron system ion-atom, atom-atom collisions at low to intermediate energy

    International Nuclear Information System (INIS)

    Kimura, M.

    1986-01-01

    A review of various theoretical treatments which have been used to study electron-capture and excitation processes in two-electron-system ion-atom, atom-atom collisions at low to intermediate energy is presented. Advantages as well as limitations associated with these theoretical models in application to practical many-electron ion-atom, atom-atom collisions are specifically pointed out. Although a rigorous theoretical study of many-electron systems has just begun so that reports of theoretical calculations are scarce to date in comparison to flourishing experimental activities, some theoretical results are of great interest and provide important information for understanding collision dynamics of the system which contains many electrons. Selected examples are given for electron capture in a multiply charged ion-He collision, ion-pair formation in an atom-atom collision and alignment and orientation in a Li + + He collision. (Auth.)

  7. Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode

    International Nuclear Information System (INIS)

    Jia Yun-Peng; Zhao Bao; Wu Yu; Zhou Xuan; Li Zhe; Tan Jian; Yang Fei

    2015-01-01

    The temperature dependences of forward voltage drop (V F ) of the fast recovery diodes (FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones. Based on deep level transient spectroscopy (DLTS) measurements, a new level E6 (E C -0.376 eV) is found in the combined lifetime treated (CLT) sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested V F results of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD. (paper)

  8. Electron capture in low- and intermediate-energy collisions between completely stripped light ions and metastable H(2s) targets

    International Nuclear Information System (INIS)

    Blanco, S.A.; Falcon, C.A.; Reinhold, C.O.; Casaubon, J.I.; Piacentini, R.D.

    1987-01-01

    Total cross sections for electron capture from H(2s) targets by He 2+ ions have been computed in the impact velocity range 0.05-0.5 au. Calculations were performed using a molecular close-coupling approach with inclusion of electron translation factors. A ten-state molecular basis set was considered. A comparison is made with Landau-Zener results for the same system. Intermediate projectile energy classical Monte Carlo capture cross sections are also presented for H + , He 2+ , Li 3+ and C 6+ projectiles. (author)

  9. Electronic monitoring and voice prompts improve hand hygiene and decrease nosocomial infections in an intermediate care unit.

    Science.gov (United States)

    Swoboda, Sandra M; Earsing, Karen; Strauss, Kevin; Lane, Stephen; Lipsett, Pamela A

    2004-02-01

    To determine whether electronic monitoring of hand hygiene and voice prompts can improve hand hygiene and decrease nosocomial infection rates in a surgical intermediate care unit. Three-phase quasi-experimental design. Phase I was electronic monitoring and direct observation; phase II was electronic monitoring and computerized voice prompts for failure to perform hand hygiene on room exit; and phase III was electronic monitoring only. Nine-room, 14-bed intermediate care unit in a university, tertiary-care institution. All patient rooms, utility room, and staff lavatory were monitored electronically. All healthcare personnel including physicians, nurses, nursing support personnel, ancillary staff, all visitors and family members, and any other personnel interacting with patients on the intermediate care unit. All patients with an intermediate care unit length of stay >48 hrs were followed for nosocomial infection. Electronic monitoring during all phases, computerized voice prompts during phase II only. We evaluated a total of 283,488 electronically monitored entries into a patient room with 251,526 exits for 420 days (10,080 hrs and 3,549 patient days). Compared with phase I, hand hygiene compliance in patient rooms improved 37% during phase II (odds ratio, 1.38; 95% confidence interval, 1.04-1.83) and 41% in phase III (odds ratio, 1.41; 95% confidence interval, 1.07-1.84). When adjusting for patient admissions during each phase, point estimates of nosocomial infections decreased by 22% during phase II and 48% during phase III; when adjusting for patient days, the number of infections decreased by 10% during phase II and 40% during phase III. Although the overall rate of nosocomial infections significantly decreased when combining phases II and III, the association between nosocomial infection and individual phase was not significant. Electronic monitoring provided effective ongoing feedback about hand hygiene compliance. During both the voice prompt phase and post

  10. Modeling and Analysis of the Common Mode Voltage in a Cascaded H-Bridge Electronic Power Transformer

    Directory of Open Access Journals (Sweden)

    Yun Yang

    2017-09-01

    Full Text Available Electronic power transformers (EPTs have been identified as emerging intelligent electronic devices in the future smart grid, e.g., the Energy Internet, especially in the application of renewable energy conversion and management. Considering that the EPT is directly connected to the medium-voltage grid, e.g., a10 kV distribution system, and its cascaded H-bridges structure, the common mode voltage (CMV issue will be more complex and severe. The CMV will threaten the insulation of the entire EPT device and even produce common mode current. This paper investigates the generated mechanism and characteristics of the CMV in a cascaded H-bridge EPT (CHB-EPT under both balanced and fault grid conditions. First, the CHB-EPT system is introduced. Then, a three-phase simplified circuit model of the high-voltage side of the EPT system is presented. Combined with a unipolar modulation strategy and carrier phase shifting technology by rigorous mathematical analysis and derivation, the EPT internal CMV and its characteristics are obtained. Moreover, the influence of the sinusoidal pulse width modulation dead time is considered and discussed based on analytical calculation. Finally, the simulation results are provided to verify the validity of the aforementioned model and the analysis results. The proposed theoretical analysis method is also suitable for other similar cascaded converters and can provide a useful theoretical guide for structural design and power density optimization.

  11. Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen

    1995-01-01

    Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...... the minimum represents the value closest to a bulk-yield induced by electron bombardment. It may also include contributions from the mechanisms that enhance the yield for thin and very thick films....

  12. Investigation of voltages and electric fields in silicon semi 3D radiation detectors using Silvaco/ATLAS simulation tool and a scanning electron microscope

    CERN Document Server

    Palviainen, T; Tuuva, T; Eranen, S; Härkönen, J; Luukka, P; Tuovinen, E

    2006-01-01

    The structure of silicon semi three-dimensional radiation detector is simulated on purpose to find out its electrical characteristics such as the depletion voltage and electric field. Two-dimensional simulation results are compared to voltage and electric field measurements done by a scanning electron microscope.

  13. Gold removal rate by ion sputtering as a function of ion-beam voltage and raster size using Auger electron spectroscopy. Final report

    International Nuclear Information System (INIS)

    Boehning, C.W.

    1983-01-01

    Gold removal rate was measured as a function of ion beam voltage and raster size using Auger electron spectroscopy (AES). Three different gold thicknesses were developed as standards. Two sputter rate calibration curves were generated by which gold sputter rate could be determined for variations in ion beam voltage or raster size

  14. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...

  15. Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2013-11-01

    We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

  16. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  17. A comparison between different oxide dispersion strengthened ferritic steel ongoing in situ oxide dissolution in High Voltage Electron Microscope

    International Nuclear Information System (INIS)

    Monnet, I.; Van den Berghe, T.; Dubuisson, Ph.

    2012-01-01

    ODS materials are considered for nuclear applications but previous experimental studies have shown a partial dissolution of some oxides under neutron irradiation. In this work, electron irradiations were used to evaluate the stability of the oxides depending on the chemical composition of the oxide dispersion. Four ferritic steels based on EM10 (Fe–9Cr–1Mo) and reinforced respectively by Al 2 O 3 , MgO, MgAl 2 O 4 and Y 2 O 3 , were studied. These materials were irradiated with 1 MeV or 1.2 MeV electrons in a High Voltage Electron Microscope. This technique allows to follow one single oxide and to determine the evolution of its size during the irradiation. In situ HVEM observations indicate that the dissolution rate depends on the chemical composition of the oxide, on the temperature and on the irradiation dose.

  18. Soft X-ray generation in gases by means of a pulsed electron beam produced in a high-voltage barier discharge

    NARCIS (Netherlands)

    Azarov, A.V.; Peters, P.J.M.; Boller, Klaus J.

    2007-01-01

    A large area pulsed electron beam is produced by a high-voltage barrier discharge. We compare the properties of the x-rays generated by stopping this beam of electrons in a thin metal foil with those generated by stopping the electrons directly in various gases. The generation of x-rays was

  19. Multiplet effects in the electronic structure of intermediate-valence compounds

    DEFF Research Database (Denmark)

    Thunström, P.; Di Marco, I.; Grechnev, A.

    2009-01-01

    We present an implementation of the Hubbard-I approximation based on the exact solution of the atomic many-body problem incorporated in a full-potential linear muffin-tin orbital method of density-functional theory. Comparison between calculated and measured x-ray photoemission spectra reveal a g...... a good agreement for intermediate valence systems in open crystal structures such as YbInCu4, SmB6, and YbB12. Spectral features of the unoccupied states of SmB6 are predicted....

  20. Total and elastic electron scattering cross sections from Xe at intermediate and high energies

    International Nuclear Information System (INIS)

    Garcia, G; Pablos, J L de; Blanco, F; Williart, A

    2002-01-01

    Experimental total electron scattering cross sections from Xe in the energy range 300-5000 eV have been obtained with experimental errors of about 3%. The method was based on the measurement of the attenuation of a linear electron beam through a Xe gas cell in combination with an electron spectroscopy technique to analyse the energy of the transmitted electrons. Differential and integral elastic cross sections have been calculated using a scattering potential method which includes relativistic effects. The consistency of our theoretical and experimental results is also discussed in the paper. Finally, analytical formulae depending on two parameters, namely the number of target electrons and the atomic polarizability, are given to reproduce the experimental data for Ne, Ar, Kr and Xe in the energy range 500-10 000 eV

  1. Theoretical Current-Voltage Curve in Low-Pressure Cesium Diode for Electron-Rich Emission

    Science.gov (United States)

    Coldstein, C. M.

    1964-01-01

    Although considerable interest has been shown in the space-charge analysis of low-pressure (collisionless case) thermionic diodes, there is a conspicuous lack in the presentation of results in a way that allows direct comparison with experiment. The current-voltage curve of this report was, therefore, computed for a typical case within the realm of experimental interest. The model employed in this computation is shown in Fig. 1 and is defined by the limiting potential distributions [curves (a) and (b)]. Curve (a) represents the potential V as a monotonic function of position with a slope of zero at the anode; curve (b) is similarly monotonic with a slope of zero at the cathode. It is assumed that by a continuous variation of the anode voltage, the potential distributions vary continuously from one limiting form to the other. Although solutions for infinitely spaced electrodes show that spatically oscillatory potential distributions may exist, they have been neglected in this computation.

  2. High-Current-Density Thermionic Cathodes and the Generation of High-Voltage Electron Beams

    Science.gov (United States)

    1989-04-30

    Cathode Temperature =1700 OC Figure 37: Peak gun voltage = 90 kV -57- 60- 0 EGUN 327 ~40 0S 20’ Vacuum 5 .2 x 10 Tor 0 o 0 15202 30 Time (jis...by modeling the filament as a thin disk. The shape of the H - V -, 2 actual filament is sketched in Fig. 2. The EGUN code 1 131 is used to calculate

  3. An accurate online calibration system based on combined clamp-shape coil for high voltage electronic current transformers.

    Science.gov (United States)

    Li, Zhen-hua; Li, Hong-bin; Zhang, Zhi

    2013-07-01

    Electronic transformers are widely used in power systems because of their wide bandwidth and good transient performance. However, as an emerging technology, the failure rate of electronic transformers is higher than that of traditional transformers. As a result, the calibration period needs to be shortened. Traditional calibration methods require the power of transmission line be cut off, which results in complicated operation and power off loss. This paper proposes an online calibration system which can calibrate electronic current transformers without power off. In this work, the high accuracy standard current transformer and online operation method are the key techniques. Based on the clamp-shape iron-core coil and clamp-shape air-core coil, a combined clamp-shape coil is designed as the standard current transformer. By analyzing the output characteristics of the two coils, the combined clamp-shape coil can achieve verification of the accuracy. So the accuracy of the online calibration system can be guaranteed. Moreover, by employing the earth potential working method and using two insulating rods to connect the combined clamp-shape coil to the high voltage bus, the operation becomes simple and safe. Tests in China National Center for High Voltage Measurement and field experiments show that the proposed system has a high accuracy of up to 0.05 class.

  4. An accurate online calibration system based on combined clamp-shape coil for high voltage electronic current transformers

    International Nuclear Information System (INIS)

    Li, Zhen-hua; Li, Hong-bin; Zhang, Zhi

    2013-01-01

    Electronic transformers are widely used in power systems because of their wide bandwidth and good transient performance. However, as an emerging technology, the failure rate of electronic transformers is higher than that of traditional transformers. As a result, the calibration period needs to be shortened. Traditional calibration methods require the power of transmission line be cut off, which results in complicated operation and power off loss. This paper proposes an online calibration system which can calibrate electronic current transformers without power off. In this work, the high accuracy standard current transformer and online operation method are the key techniques. Based on the clamp-shape iron-core coil and clamp-shape air-core coil, a combined clamp-shape coil is designed as the standard current transformer. By analyzing the output characteristics of the two coils, the combined clamp-shape coil can achieve verification of the accuracy. So the accuracy of the online calibration system can be guaranteed. Moreover, by employing the earth potential working method and using two insulating rods to connect the combined clamp-shape coil to the high voltage bus, the operation becomes simple and safe. Tests in China National Center for High Voltage Measurement and field experiments show that the proposed system has a high accuracy of up to 0.05 class

  5. A summary of the low angle x-ray atomic scattering factors which have been measured by the critical voltage effect in High Energy Electron Diffraction (HEED)

    International Nuclear Information System (INIS)

    Fox, A.G.; Fisher, R.M.

    1987-08-01

    A tabulated summary of all the accurate (/approximately/0.1%) low-angle x-ray atomic scattering (form) factors which have been determined by the systematic critical voltage technique in HEED is presented. For low atomic number elements (Z/approx lt/40) the low angle form factors can be significantly different to best free atom values, and so the best band structure calculated and/or x-ray measured form factors consistent with the critical voltage measurements are also indicated. At intermediate atomic numbers Z≅40→50 only the very low-angle form factors appear to be different to the best free atom values, and even then only by a small amount. For heavy elements (Z/approx lt/70) the best free atom form factors appear to agree very closely with the critical voltage measured values and so, in this case, critical voltage measurements give very accurate measurements of Debye-Waller factors. 48 refs

  6. Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

    Science.gov (United States)

    Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

    2018-04-01

    In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

  7. Monitoring the metering performance of an electronic voltage transformer on-line based on cyber-physics correlation analysis

    International Nuclear Information System (INIS)

    Zhang, Zhu; Li, Hongbin; Hu, Chen; Jiao, Yang; Tang, Dengping

    2017-01-01

    Metering performance is the key parameter of an electronic voltage transformer (EVT), and it requires high accuracy. The conventional off-line calibration method using a standard voltage transformer is not suitable for the key equipment in a smart substation, which needs on-line monitoring. In this article, we propose a method for monitoring the metering performance of an EVT on-line based on cyber-physics correlation analysis. By the electrical and physical properties of a substation running in three-phase symmetry, the principal component analysis method is used to separate the metering deviation caused by the primary fluctuation and the EVT anomaly. The characteristic statistics of the measured data during operation are extracted, and the metering performance of the EVT is evaluated by analyzing the change in statistics. The experimental results show that the method successfully monitors the metering deviation of a Class 0.2 EVT accurately. The method demonstrates the accurate evaluation of on-line monitoring of the metering performance on an EVT without a standard voltage transformer. (paper)

  8. Monitoring the metering performance of an electronic voltage transformer on-line based on cyber-physics correlation analysis

    Science.gov (United States)

    Zhang, Zhu; Li, Hongbin; Tang, Dengping; Hu, Chen; Jiao, Yang

    2017-10-01

    Metering performance is the key parameter of an electronic voltage transformer (EVT), and it requires high accuracy. The conventional off-line calibration method using a standard voltage transformer is not suitable for the key equipment in a smart substation, which needs on-line monitoring. In this article, we propose a method for monitoring the metering performance of an EVT on-line based on cyber-physics correlation analysis. By the electrical and physical properties of a substation running in three-phase symmetry, the principal component analysis method is used to separate the metering deviation caused by the primary fluctuation and the EVT anomaly. The characteristic statistics of the measured data during operation are extracted, and the metering performance of the EVT is evaluated by analyzing the change in statistics. The experimental results show that the method successfully monitors the metering deviation of a Class 0.2 EVT accurately. The method demonstrates the accurate evaluation of on-line monitoring of the metering performance on an EVT without a standard voltage transformer.

  9. Intermediate energy electron impact excitation of composite vibrational modes in phenol

    Energy Technology Data Exchange (ETDEWEB)

    Neves, R. F. C. [School of Chemical and Physical Sciences, Flinders University, G.P.O. Box 2100, Adelaide, SA 5001 (Australia); Instituto Federal do Sul de Minas Gerais, Campus Poços de Caldas, Minas Gerais (Brazil); Departamento de Física, Universidade Federal de Juiz de Fora, 36036-900, Juiz de Fora, Minas Gerais (Brazil); Jones, D. B. [School of Chemical and Physical Sciences, Flinders University, G.P.O. Box 2100, Adelaide, SA 5001 (Australia); Lopes, M. C. A.; Nixon, K. L. [Departamento de Física, Universidade Federal de Juiz de Fora, 36036-900, Juiz de Fora, Minas Gerais (Brazil); Oliveira, E. M. de; Lima, M. A. P. [Instituto de Física ‘Gleb Wataghin,’ Universidade Estadual de Campinas, 13083-859 Campinas, São Paulo (Brazil); Costa, R. F. da [Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, 09210-580 Santo André, São Paulo (Brazil); Varella, M. T. do N. [Instituto de Física, Universidade de São Paulo, C.P. 66318, 05315-970 São Paulo (Brazil); Bettega, M. H. F. [Departamento de Física, Universidade Federal do Paraná, C.P. 19044, 81531-990 Curitiba, Paraná (Brazil); Silva, G. B. da [Universidade Federal de Mato Grosso, Barra do Garças, Mato Grosso (Brazil); Brunger, M. J., E-mail: Michael.Brunger@flinders.edu.au [School of Chemical and Physical Sciences, Flinders University, G.P.O. Box 2100, Adelaide, SA 5001 (Australia); Institute of Mathematical Sciences, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-05-21

    We report differential cross section results from an experimental investigation into the electron impact excitation of a number of the low-lying composite (unresolved) vibrational modes in phenol (C{sub 6}H{sub 5}OH). The measurements were carried out at incident electron energies in the range 15–40 eV and for scattered-electron angles in the range 10–90°. The energy resolution of those measurements was typically ∼80 meV. Calculations, using the GAMESS code, were also undertaken with a B3LYP/aug-cc-pVDZ level model chemistry, in order to enable us to assign vibrational modes to the features observed in our energy loss spectra. To the best of our knowledge, the present cross sections are the first to be reported for vibrational excitation of the C{sub 6}H{sub 5}OH molecule by electron impact.

  10. Total electron scattering cross sections for methanol and ethanol at intermediate energies

    International Nuclear Information System (INIS)

    Silva, D G M; Tejo, T; Lopes, M C A; Muse, J; Romero, D; Khakoo, M A

    2010-01-01

    Absolute total cross section (TCS) measurements of electron scattering from gaseous methanol and ethanol molecules are reported for impact energies from 60 to 500 eV, using the linear transmission method. The attenuation of intensity of a collimated electron beam through the target volume is used to determine the absolute TCS for a given impact energy, using the Beer-Lambert law to first approximation. Besides these experimental measurements, we have also determined TCS using the additivity rule.

  11. High-voltage electron-microscope investigation of point-defect agglomerates in irradiated copper during in-situ annealing

    International Nuclear Information System (INIS)

    Jaeger, W.; Urban, K.; Frank, W.

    1980-01-01

    Thin copper foils were irradiated with 650 keV electrons at 10 K in a high-voltage electron microscope (HVEM) to doses phi in the range 2 x 10 23 electrons/m 2 approximately 25 electrons /m 2 and then annealed in situ up to room temperature and outside the HVEM between room temperature and 470 K. During irradiation visible defect clusters were formed only at phi >= 2.5 x 10 24 electrons/m 2 . At smaller doses defect clusters became visible after annealing at 50 K. Between 50 K and 120 K further clusters, mainly dislocation loops on brace111 planes, appeared. Above 120 K, particularly between 160 K and 300 K, some of the dislocation loops became glissile. They glided out of the specimens or agglomerated to larger clusters of frequently complex shapes. As a consequence between 160 K and 300 K the cluster density decreased strongly, whereas the mean cluster size increased monotonously through the entire range of annealing temperatures covered. Contrast analyses between 180 K and 400 K revealed that the great majority of the dislocation loops were of interstitial type. At 470 K a new type of small clusters emerged, presumably of vacancy type. These observations are compared with other studies on electron-irradiated copper and with the current models of radiation damage in metals. (author)

  12. Intermediate energy electron cooling for antiproton sources using a Pelletron accelerator

    International Nuclear Information System (INIS)

    Cline, D.B.; Adney, J.; Ferry, J.; Kells, W.; Larson, D.J.; Mills, F.E.; Sundquist, M.

    1983-01-01

    It has been shown at FNAL that the electron cooling of protons is a very efficient method for reaching high luminosity in a proton beam. The emittance of the 120 KeV electron beam used at Fermilab corresponds to a cathode temperature of 0.1 eV. In order to apply cooling techniques to GeV proton beams the electron energies required are in the MeV range. In the experiment reported in this paper the emittance of a 3-MeV Pelletron electron accelerator was measured to determine that its emittance scaled to a value appropriate for electron cooling. The machine tested was jointly owned and operated by the University of California at Santa Barbara and National Electrostatics Corporation for research into free-electron lasers which also require low emittance beams for operation. This paper describes the thermal emittance of the beam to be the area in phase space in which 90% of the beam trajectories lie and goes on to describe the emittance-measurement method both in theory and application

  13. Effect of pulsed voltage on electrochemical migration of tin in electronics

    DEFF Research Database (Denmark)

    Verdingovas, Vadimas; Jellesen, Morten Stendahl; Ambat, Rajan

    2015-01-01

    formation and increases the charge transferred between the electrodes over time. With increase of duty cycle, increases the anodic dissolution of tin, which was visualized using a tin ion indicator applied on the components prior to applying the voltage. The anodic dissolution of tin significantly...... respectively at 10 and 5 V, while the duty cycle and the pulse width were varied in the range of ms. The results showed that varying of pulse width at fixed duty cycle has a minor effect under investigated conditions, whereas increasing duty cycle significantly reduces the time to short due to dendrite...

  14. Intermediate energy cross sections for electron-impact vibrational-excitation of pyrimidine

    Energy Technology Data Exchange (ETDEWEB)

    Jones, D. B. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, SA 5001 (Australia); Ellis-Gibbings, L.; García, G. [Instituto de Física Fundamental, CSIC, Serrano 113-bis, 28006 Madrid (Spain); Nixon, K. L. [Departamento de Física, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, Minas Gerais (Brazil); School of Biology, Chemistry and Forensic Science, University of Wolverhampton, Wolverhampton WV1 1LY (United Kingdom); Lopes, M. C. A. [Departamento de Física, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, Minas Gerais (Brazil); Brunger, M. J., E-mail: Michael.Brunger@flinders.edu.au [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, SA 5001 (Australia); Institute of Mathematical Sciences, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-09-07

    We report differential cross sections (DCSs) and integral cross sections (ICSs) for electron-impact vibrational-excitation of pyrimidine, at incident electron energies in the range 15–50 eV. The scattered electron angular range for the DCS measurements was 15°–90°. The measurements at the DCS-level are the first to be reported for vibrational-excitation in pyrimidine via electron impact, while for the ICS we extend the results from the only previous condensed-phase study [P. L. Levesque, M. Michaud, and L. Sanche, J. Chem. Phys. 122, 094701 (2005)], for electron energies ⩽12 eV, to higher energies. Interestingly, the trend in the magnitude of the lower energy condensed-phase ICSs is much smaller when compared to the corresponding gas phase results. As there is no evidence for the existence of any shape-resonances, in the available pyrimidine total cross sections [Baek et al., Phys. Rev. A 88, 032702 (2013); Fuss et al., ibid. 88, 042702 (2013)], between 10 and 20 eV, this mismatch in absolute magnitude between the condensed-phase and gas-phase ICSs might be indicative for collective-behaviour effects in the condensed-phase results.

  15. Thomson scattering on argon surfatron plasmas at intermediate pressures: Axial profiles of the electron temperature and electron density

    International Nuclear Information System (INIS)

    Palomares, J.M.; Iordanova, E.; Veldhuizen, E.M. van; Baede, L.; Gamero, A.; Sola, A.; Mullen, J.J.A.M. van der

    2010-01-01

    The axial profiles of the electron density n e and electron temperature T e of argon surfatron plasmas in the pressure range of 6-20 mbar and microwave power between 32 and 82 W have been determined using Thomson Scattering of laser irradiation at 532 nm. For the electron density and temperature we found values in the ranges 5 x 10 18 e 19 m -3 and 1.1 e e and T e down to 8% and 3%, respectively. It is found that n e decreases in the direction of the wave propagation with a slope that is nearly constant. The slope depends on the pressure but not on the power. Just as predicted by theories we see that increasing the power leads to longer plasma columns. However, the plasmas are shorter than what is predicted by theories based on the assumption that for the plasma-wave interaction electron-atom collisions are of minor importance (the so-called collisionless regime). The plasma vanishes long before the critical value of the electron density is reached. In contrast to what is predicted by the positive column model it is found that T e does not stay constant along the column, but monotonically increases with the distance from the microwave launcher. Increases of more than 50% over 30 cm were found.

  16. Hydrogen is a preferred intermediate in the energy-conserving electron transport chain of Methanosarcina barkeri.

    Science.gov (United States)

    Kulkarni, Gargi; Kridelbaugh, Donna M; Guss, Adam M; Metcalf, William W

    2009-09-15

    Methanogens use an unusual energy-conserving electron transport chain that involves reduction of a limited number of electron acceptors to methane gas. Previous biochemical studies suggested that the proton-pumping F(420)H(2) dehydrogenase (Fpo) plays a crucial role in this process during growth on methanol. However, Methanosarcina barkeri Delta fpo mutants constructed in this study display no measurable phenotype on this substrate, indicating that Fpo plays a minor role, if any. In contrast, Delta frh mutants lacking the cytoplasmic F(420)-reducing hydrogenase (Frh) are severely affected in their ability to grow and make methane from methanol, and double Delta fpo/Delta frh mutants are completely unable to use this substrate. These data suggest that the preferred electron transport chain involves production of hydrogen gas in the cytoplasm, which then diffuses out of the cell, where it is reoxidized with transfer of electrons into the energy-conserving electron transport chain. This hydrogen-cycling metabolism leads directly to production of a proton motive force that can be used by the cell for ATP synthesis. Nevertheless, M. barkeri does have the flexibility to use the Fpo-dependent electron transport chain when needed, as shown by the poor growth of the Delta frh mutant. Our data suggest that the rapid enzymatic turnover of hydrogenases may allow a competitive advantage via faster growth rates in this freshwater organism. The mutant analysis also confirms the proposed role of Frh in growth on hydrogen/carbon dioxide and suggests that either Frh or Fpo is needed for aceticlastic growth of M. barkeri.

  17. Photo- and radiation chemical studies of intermediates involved in excited-state electron-transfer reactions

    International Nuclear Information System (INIS)

    Hoffman, M.Z.

    1985-01-01

    Excited-state inter- and intramolecular electron-transfer reactions lie at the heart of the most photochemical solar energy conversion schemes. The authors research, which has utilized the techniques of continuous and pulsed photolysis and radiolysis, has focused on three general aspects of these reactions involving transition metal coordination complexes and electron donor-acceptor complexes: i) the effect of solution medium on the properties and quenching of the excited states; ii) the control of the quantum yields of formation of redox products; iii) the mechanism by which reduced species interact with water to yield H 2 homogeneously and heterogeneously. EDTA is among the most popular sacrificial electron donors used in model systems. Its role is to scavenge the oxidized form of the photosensitizer in order to prevent its rapid reaction with the reduced form of the electron relay species that results from the electron-transfer quenching of the excited photosensitizer. In systems involving MV 2+ , the radicals resulting from the oxidation of EDTA can eventually lead to the generation of a second equivalent of MV + ; the reducing agent is believed to be a radical localized on the carbon atom alpha to the carboxylate group. The reaction of radiolytically-generated OH/H with EDTA produces this radical directly via H-abstraction or indirectly via deprotonation of the carbon atom adjacent to the nitrogen radical site in the oxidized amine moiety; it reduces MV 2+ with rate constants of 2.8 x 10 9 , 7.6 x 10 9 , and 8.5 x 10 6 M -1 s -1 at pH 12.5, 8.3, and 4.7, respectively. Degradative decarboxylation of EDTA-radicals and their back electron-transfer reactions are enhanced in acidic solution causing the yield of MV + to be severely diminished

  18. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  19. Coulomb correlations in electron and positron impact ionization of hydrogen at intermediate and higher energies

    International Nuclear Information System (INIS)

    Jetzke, S.; Faisal, F.H.M.

    1992-01-01

    Investigating the relation between the asymptotic condition and the dynamic Coulomb correlation for single and multiple ionization we discuss a complete set of spatially separable N-electrons final-state wavefunctions, satisfying multiple ionization boundary conditions. We apply these results to electron and positron impact ionization of atomic hydrogen in the energy range 54.4 and 250 eV on the basis of a parameter-free model formulated within the scope of the multiple scattering approach. A comparison between our results and available experimental data and alternative theoretical calculations are made and discussed. (Author)

  20. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    Science.gov (United States)

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  1. Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Vexler, M. I., E-mail: vexler@mail.ioffe.ru; Illarionov, Yu. Yu.; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-04-15

    The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.

  2. Instrument electronic transformers for medium voltage systems; Transformadores eletronicos de instrumentos para sistemas de media tensao

    Energy Technology Data Exchange (ETDEWEB)

    Javora, Radek; Stefanka, Martin; Mahonen, Pentti; Niemi, Tapio; Rintamaki, Olli [ABB, Helsinki (Finland); ABB, Prague (Czech Republic)

    2010-02-15

    This paper compares the conventional technologies and the electronic of instrument transformers, and highlights the advantages, discoveries and principles of electronic models. Such equipment are essentially indicated for using with as micro processed relays at the substations, and also projected for connection to the IEDs, and the future digital communication (author)

  3. Using Electronic Readers: Action Research in an Intermediate Adult ESL Class

    Science.gov (United States)

    Fraser, Monica; Abbott, Marilyn

    2016-01-01

    The use of portable electronic reading devices in the English as a second language (ESL) classroom has the potential to positively impact learners' reading engagement and language skill development. However, due to the lack of research, few guidelines are available to inform instructors of the benefits and challenges of using these devices in ESL…

  4. The Stern-Gerlach experiment, electron spin and intermediate quantum mechanics

    International Nuclear Information System (INIS)

    Mackintosh, A.R.

    1983-01-01

    The paper deals with the theory of electron spin. The Stern-Gerlach experiment, the anticommutation relations and the properties of spin operators are discussed. The Pauli theory, Dirac transformation theory, the double Stern-Gerlach experiment, the EPR paradox and Bell's inequality are also covered. (U.K.)

  5. Identifying Intermediates of Sequential Electron and Hydrogen Loss from a Dicarbonylcobalt Hydride Complex

    Czech Academy of Sciences Publication Activity Database

    Krafft, M. J.; Bubrin, M.; Paretzki, A.; Lissner, F.; Fiedler, Jan; Záliš, Stanislav; Kaim, W.

    2013-01-01

    Roč. 52, č. 26 (2013), s. 6781-6784 ISSN 1433-7851 R&D Projects: GA MŠk LD11086 Institutional support: RVO:61388955 Keywords : cobalt * Electron transfer * ferrocene Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 11.336, year: 2013

  6. Differential cross sections for intermediate-energy electron scattering from α-tetrahydrofurfuryl alcohol: Excitation of electronic-states

    Energy Technology Data Exchange (ETDEWEB)

    Chiari, L.; Jones, D. B.; Thorn, P. A.; Pettifer, Z. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, SA 5001 (Australia); Duque, H. V. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, SA 5001 (Australia); Departamento de Física, Universidade Federal de Juiz de Fora, Juiz de Fora, MG (Brazil); Silva, G. B. da [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, SA 5001 (Australia); Universidade Federal de Mato Grosso, Barra do Garças, Mato Grosso (Brazil); Limão-Vieira, P. [Laboratório de Colisões Atómicas e Moleculares, CEFITEC, Departamento de Física, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Duflot, D. [Laboratoire de Physique des Lasers, Atomes et Molécules, UMR CNRS 8523, Université Lille, F-59655 Villeneuve d’Ascq Cedex (France); Hubin-Franskin, M.-J.; Delwiche, J. [Départment de Chimie, Université de Liège, Institut de Chimie-Bât. B6C, B-4000 Liège 1 (Belgium); Blanco, F. [Departamento de Física Atómica, Molecular y Nuclear, Universidad Complutense de Madrid, Madrid E-28040 (Spain); García, G. [Instituto de Física Fundamental, CSIC, Madrid E-28006 (Spain); and others

    2014-07-14

    We report on measurements of differential cross sections (DCSs) for electron impact excitation of a series of Rydberg electronic-states in α-tetrahydrofurfuryl alcohol (THFA). The energy range of these experiments was 20–50 eV, while the scattered electron was detected in the 10°–90° angular range. There are currently no other experimental data or theoretical computations against which we can directly compare the present measured results. Nonetheless, we are able to compare our THFA DCSs with earlier cross section measurements for Rydberg-state electronic excitation for tetrahydrofuran, a similar cyclic ether, from Do et al. [J. Chem. Phys. 134, 144302 (2011)]. In addition, “rotationally averaged” elastic DCSs, calculated using our independent atom model with screened additivity rule correction approach are also reported. Those latter results give integral cross sections consistent with the optical theorem, and supercede those from the only previous study of Milosavljević et al. [Eur. Phys. J. D 40, 107 (2006)].

  7. Thomson scattering on argon surfatron plasmas at intermediate pressures: Axial profiles of the electron temperature and electron density

    Energy Technology Data Exchange (ETDEWEB)

    Palomares, J.M., E-mail: f02palij@gmail.co [Departamento de Fisica, Universidad de Cordoba, Campus de Rabanales, ed. C-2, 14071 Cordoba (Spain); Iordanova, E.; Veldhuizen, E.M. van; Baede, L. [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Gamero, A.; Sola, A. [Departamento de Fisica, Universidad de Cordoba, Campus de Rabanales, ed. C-2, 14071 Cordoba (Spain); Mullen, J.J.A.M. van der, E-mail: j.j.a.m.v.d.Mullen@tue.n [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Departamento de Fisica, Universidad de Cordoba, Campus de Rabanales, ed. C-2, 14071 Cordoba (Spain)

    2010-03-15

    The axial profiles of the electron density n{sub e} and electron temperature T{sub e} of argon surfatron plasmas in the pressure range of 6-20 mbar and microwave power between 32 and 82 W have been determined using Thomson Scattering of laser irradiation at 532 nm. For the electron density and temperature we found values in the ranges 5 x 10{sup 18} < n{sub e} < 8 x 10{sup 19} m{sup -3} and 1.1 < T{sub e} < 2.0 eV. Due to several improvements of the setup we could reduce the errors of n{sub e} and T{sub e} down to 8% and 3%, respectively. It is found that n{sub e} decreases in the direction of the wave propagation with a slope that is nearly constant. The slope depends on the pressure but not on the power. Just as predicted by theories we see that increasing the power leads to longer plasma columns. However, the plasmas are shorter than what is predicted by theories based on the assumption that for the plasma-wave interaction electron-atom collisions are of minor importance (the so-called collisionless regime). The plasma vanishes long before the critical value of the electron density is reached. In contrast to what is predicted by the positive column model it is found that T{sub e} does not stay constant along the column, but monotonically increases with the distance from the microwave launcher. Increases of more than 50% over 30 cm were found.

  8. Formation of novel reactive intermediate by electron-laser dual beam irradiation

    International Nuclear Information System (INIS)

    Ishida, Akito; Takamuku, Setsuo

    1992-01-01

    The pulse radiolysis system of the Institute of Scientific and Industrial Research, Osaka University, (ISIR) has been progressed to observe a highly reactive species, which is produced by successive irradiation of electron and laser or of CW-UV-light and electron. The dual beam irradiation system, which consists of the beam synchronization system, the optical alignment, and the measurement system, is described in detail. Dual beam irradiation studies on 2-methylbenzophenone and some compounds with a C=N bond have been carried out by use of this system. Pulse radiolysis of 2-methylbenzophenone in benzene induced formation of an unstable photoenol via the triplet state, which was irradiated by a visible laser pulse to give dihydroanthrone. Pulse radiolysis of syn-benzalaniline and a nitrileylide in 2-methyltetrahydrofuran, which were produced by steady state photoirradiation at low temperature, enabled us to observe their very unstable radical anions. (author)

  9. Electron capture in collisions of Si3+ ions with atomic hydrogen from low to intermediate energies

    Science.gov (United States)

    Liu, C. H.; Liu, L.; Wang, J. G.

    2014-07-01

    The electron capture process for the Si3+(3s) + H(1s) collisions is investigated by the quantum-mechanical molecular orbital close-coupling (MOCC) method and by the two-center atomic orbital close-coupling (AOCC) method in the energy range of 10-5-10 keV/u and 0.8-200 keV/u, respectively. Total and state-selective cross sections are presented and compared with the available theoretical and experimental results. The present MOCC and AOCC results agree well with the experimental measurements, but show some discrepancy with the calculations of Wang et al. [Phys. Rev. A 74, 052709 (2006), 10.1103/PhysRevA.74.052709] at E > 40 eV/u because of the inclusion of rotational couplings, which play important roles in the electron capture process. At lower energies, the present results are about three to five times smaller than those of Wang et al. due to the difference in the molecular data at large internuclear distances. The energy behaviors of the electron capture cross sections are discussed on the basis of identified reaction mechanisms.

  10. Pencil-like mm-size electron beams produced with linear inductive voltage adders (LIVA)

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poukey, J.W.; Rovang, D.C.

    1996-01-01

    This paper presents design, analysis, and first results of the high brightness electron beam experiments currently under investigation at Sandia. Anticipated beam parameters are: energy 12 MeV, current 35-40 kA, rms radius 0.5 mm, pulse duration 40 ns FWHM. The accelerator is SABRE, a pulsed LIVA modified to higher impedance, and the electron source is a magnetically immersed foilless electron diode. 20 to 30 Tesla solenoidal magnets are required to insulate the diode and contain the beam to its extremely small sized (1 mm) envelope. These experiments are designed to push the technology to produce the highest possible electron current in a submillimeter radius beam. Design, numercial simulations, and first experimental results are presented

  11. Pencil-like mm-size electron beams produced with Linear Inductive Voltage Adders (LIVA)

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poukey, J.W.; Rovang, D C.; Maenchen, J.E.; Cordova, S.R.; Menge, P.R.; Pepping, R.; Bennett, L.; Mikkelson, K.; Smith, D.L.; Halbleib, J.; Stygar, W.A.; Welch, D.R.

    1996-01-01

    We present the design, analysis, and first results of the high brightness electron beam experiments currently under investigation at Sandia National Laboratories. The anticipated beam parameters are the following: energy 12 MeV, current 35-40 kA, rms radius 0.5 mm, and pulse duration 40 ns FWHM. The accelerator is SABRE, a pulsed LIVA modified to higher impedance, and the electron source is a magnetically immersed foilless electron diode. Twenty to thirty Tesla solenoidal magnets are required to insulate the diode and contain the beam to its extremely small sized (1 mm) envelope. These experiments are designed to push the technology to produce the highest possible electron current in a submillimeter radius beam. Design, numerical simulations, and first experimental results are presented. (author)

  12. The RF voltage dependence of the electron sheath heating in low pressure capacitively coupled rf discharges

    International Nuclear Information System (INIS)

    Buddemeier, U.; Kortshagen, U.; Pukropski, I.

    1995-01-01

    In low pressure capacitively coupled RF discharges two competitive electron heating mechanisms have been discussed for some time now. At low pressures the stochastic sheath heating and for somewhat higher pressures the Joule heating in the bulk plasma have been proposed. When the pressure is increased at constant RF current density a transition from concave electron distribution functions (EDF) with a pronounced cold electron group to convex EDFs with a missing strong population of cold electrons is found. This transition was interpreted as the transition from dominant stochastic to dominant Joule heating. However, a different interpretation has been given by Kaganovich and Tsendin, who attributed the concave shaped EDFs to the spatially inhomogeneous RF field in combination with the nonlocality of the EDF

  13. Characterization of electron beams generated in a high-voltage pulse-line-driven pseudospark discharge

    International Nuclear Information System (INIS)

    Ramaswamy, K.; Destler, W.W.; Segalov, Z.; Rodgers, J.

    1994-01-01

    Emittance and energy measurements have been performed on a high-brightness electron beam (>10 10 A/m 2 rad 2 ) with diameter in the range 1--3 mm and energy in the range 150--170 keV. This electron beam is generated by the mating of a hollow-cathode discharge device operating in the pseudospark regime to the output of a high-power pulse line accelerator. The measured effective emittance lies in the range between 30 and 90 mm mrad and increases with axial distance. Electron energy measurements indicate that the high-energy electrons are generated during the first 20--30 ns of the discharge. Both the emittance and energy experiments were performed at two different ambient argon gas pressures (92 and 152 mtorr). Beam expansion as a function of axial position has also been studied and a lower bound on the beam brightness has been obtained

  14. The IBA Rhodotron: an industrial high-voltage high-powered electron beam accelerator for polymers radiation processing

    Science.gov (United States)

    Van Lancker, Marc; Herer, Arnold; Cleland, Marshall R.; Jongen, Yves; Abs, Michel

    1999-05-01

    The Rhodotron is a high-voltage, high-power electron beam accelerator based on a design concept first proposed in 1989 by J. Pottier of the French Atomic Agency, Commissariat à l'Energie Atomique (CEA). In December 1991, the Belgian particle accelerator manufacturer, Ion Beam Applications s.a. (IBA) entered into an exclusive agreement with the CEA to develop and industrialize the Rhodotron. Electron beams have long been used as the preferential method to cross-link a variety of polymers, either in their bulk state or in their final form. Used extensively in the wire and cable industry to toughen insulating jackets, electron beam-treated plastics can demonstrate improved tensile and impact strength, greater abrasion resistance, increased temperature resistance and dramatically improved fire retardation. Electron beams are used to selectively cross-link or degrade a wide range of polymers in resin pellets form. Electron beams are also used for rapid curing of advanced composites, for cross-linking of floor-heating and sanitary pipes and for cross-linking of formed plastic parts. Other applications include: in-house and contract medical device sterilization, food irradiation in both electron and X-ray modes, pulp processing, electron beam doping of semi-conductors, gemstone coloration and general irradiation research. IBA currently markets three models of the Rhodotron, all capable of 10 MeV and alternate beam energies from 3 MeV upwards. The Rhodotron models TT100, TT200 and TT300 are typically specified with guaranteed beam powers of 35, 80 and 150 kW, respectively. Founded in 1986, IBA, a spin-off of the Cyclotron Research Center at the University of Louvain (UCL) in Belgium, is a pioneer in accelerator design for industrial-scale production.

  15. The IBA Rhodotron: an industrial high-voltage high-powered electron beam accelerator for polymers radiation processing

    International Nuclear Information System (INIS)

    Lancker, Marc van; Herer, Arnold; Cleland, Marshall R.; Jongen, Yves; Abs, Michel

    1999-01-01

    The Rhodotron is a high-voltage, high-power electron beam accelerator based on a design concept first proposed in 1989 by J. Pottier of the French Atomic Agency, Commissariat a l'Energie Atomique (CEA). In December 1991, the Belgian particle accelerator manufacturer, Ion Beam Applications s.a. (IBA) entered into an exclusive agreement with the CEA to develop and industrialize the Rhodotron. Electron beams have long been used as the preferential method to cross-link a variety of polymers, either in their bulk state or in their final form. Used extensively in the wire and cable industry to toughen insulating jackets, electron beam-treated plastics can demonstrate improved tensile and impact strength, greater abrasion resistance, increased temperature resistance and dramatically improved fire retardation. Electron beams are used to selectively cross-link or degrade a wide range of polymers in resin pellets form. Electron beams are also used for rapid curing of advanced composites, for cross-linking of floor-heating and sanitary pipes and for cross-linking of formed plastic parts. Other applications include: in-house and contract medical device sterilization, food irradiation in both electron and X-ray modes, pulp processing, electron beam doping of semi-conductors, gemstone coloration and general irradiation research. IBA currently markets three models of the Rhodotron, all capable of 10 MeV and alternate beam energies from 3 MeV upwards. The Rhodotron models TT100, TT200 and TT300 are typically specified with guaranteed beam powers of 35, 80 and 150 kW, respectively. Founded in 1986, IBA, a spin-off of the Cyclotron Research Center at the University of Louvain (UCL) in Belgium, is a pioneer in accelerator design for industrial-scale production

  16. Differential cross sections for the elastic scattering of intermediate energy electrons from sodium

    International Nuclear Information System (INIS)

    Teubner, P.J.O.; Buckner, S.J.; Noble, C.J.

    1977-11-01

    Differential cross sections for the elastic scattering of electrons from sodium have been measured with high angular resolution for incident energies of 54.4, 75, 100 and 150 eV and over an angular range of 12 0 to 140 0 . The experimental data are compared with calculations based on the First Born approximation, the Glauber approximation and a close coupling impact parameter calculation. Calculations have been carried out for an optical model using the prescription of Vanderpoorten for localizing the absorptive part of the potential. Of the theoretical calculations the optical model is found to best reproduce the general features of the cross section at all energies. (Author)

  17. Distorted wave models applied to electron emission study in ion-atom collisions at intermediate and high energies

    International Nuclear Information System (INIS)

    Fainstein, P.D.

    1989-01-01

    The electron emission from different atoms induced by impact of multicharged bare ions at intermediate and high energies is studied. To perform these studies, the continuum distorted wave-eikonal initial state model is used. With this distorted wave model, analytical expressions are obtained for the transition amplitudes as a function of the transverse momentum transfer for hydrogen targets in an arbitrary initial state and for every any orbital of a multielectronic target represented as a linear combination of Slater type orbitals. With these expressions, the different cross sections which are compared with the experimental data available are numerically calculated. The results obtained for different targets and projectiles and the comparison with other theoretical models and experimental data allows to explain the electron emission spectra and to predict new effects which have not been measured so far. The results of the present work permit to view the ionization process as the evolution of the active electron in the combined field of the target and projectile nuclei. (Author) [es

  18. Refinement of Monte Carlo simulations of electron-specimen interaction in low-voltage SEM

    International Nuclear Information System (INIS)

    Kieft, Erik; Bosch, Eric

    2008-01-01

    A Monte Carlo tool is presented for the simulation of secondary electron (SE) emission in a scanning electron microscope (SEM). The tool is based on the Geant4 platform of CERN. The modularity of this platform makes it comparatively easy to add and test individual physical models. Our aim has been to develop a flexible and generally applicable tool, while at the same time including a good description of low-energy (<50 eV) interactions of electrons with matter. To this end we have combined Mott cross-sections with phonon-scattering based cross-sections for the elastic scattering of electrons, and we have adopted a dielectric function theory approach for inelastic scattering and generation of SEs. A detailed model of the electromagnetic fields from an actual SEM column has been included in the tool for ray tracing of secondary and backscattered electrons. Our models have been validated against experimental results through comparison of the simulation results with experimental yields, SE spectra and SEM images. It is demonstrated that the resulting simulation package is capable of quantitatively predicting experimental SEM images and is an important tool in building a deeper understanding of SEM imaging.

  19. Low Voltage Electron Beam Processing Final Report CRADA No. TC-645-93-A

    Energy Technology Data Exchange (ETDEWEB)

    Chen, H. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Wakalopulos, G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-10-16

    This CRADA project was established to develop a small, inexpensive sealed-tube electron beam processing system having immediate applications in industrial, high speed manufacturing processes, and in the Department of Energy (DOE) waste treatment/cleanup operations. The technical work involved the development and demonstration of a compact, sealed, 50-75 kilovolt (kV) EB generator prototype, including controls and power supply. The specific goals of this project were to develop a low cost vacuum tube capable of shooting an electron beam several inches into the air, and to demonstrate that wide area materials processing is feasible by stacking the tubes to produce continuous beams. During the project, we successfully demonstrated the producibility of a low cost electron beam system and several material processing operations of interest to US industry, DOE and, since September 11, 2001, the Homeland Security.

  20. Re-evaluating the role of sterics and electronic coupling in determining the open-circuit voltage of organic solar cells

    KAUST Repository

    Graham, Kenneth; Erwin, Patrick; Nordlund, Dennis; Vandewal, Koen; Li, Ruipeng; Ngongang Ndjawa, Guy Olivier; Hoke, Eric T.; Salleo, Alberto; Thompson, Mark E.; McGehee, Michael D.; Amassian, Aram

    2013-01-01

    The effects of sterics and molecular orientation on the open-circuit voltage and absorbance properties of charge-transfer states are explored in model bilayer organic photovoltaics. It is shown that the open-circuit voltage correlates linearly with the charge-transfer state energy and is not significantly influenced by electronic coupling. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Re-evaluating the role of sterics and electronic coupling in determining the open-circuit voltage of organic solar cells

    KAUST Repository

    Graham, Kenneth

    2013-07-30

    The effects of sterics and molecular orientation on the open-circuit voltage and absorbance properties of charge-transfer states are explored in model bilayer organic photovoltaics. It is shown that the open-circuit voltage correlates linearly with the charge-transfer state energy and is not significantly influenced by electronic coupling. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Microwave-Induced Magneto-Oscillations and Signatures of Zero-Resistance States in Phonon-Drag Voltage in Two-Dimensional Electron Systems.

    Science.gov (United States)

    Levin, A D; Momtaz, Z S; Gusev, G M; Raichev, O E; Bakarov, A K

    2015-11-13

    We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zero-resistance states, the phonon-drag voltage demonstrates sharp features suggesting that current domains associated with these states can exist in the absence of external dc driving.

  3. Electronics drivers for high voltage dielectric electro active polymer (DEAP) applications

    DEFF Research Database (Denmark)

    Zhang, Zhe; Andersen, Michael A. E.

    2015-01-01

    . In this paper, electronics divers for heating valves, loud speakers, incremental motors, and energy harvesting are reviewed, studied and developed in accordance with their corresponding specifications. Due to the simplicity and low power capacity (below 10W), the reversible Fly - back converters with both......, because of its high control linearity, is implemented for the loud speaker application s . A synthesis among those converter topologies and control techniques is given; therefore, for those DEAP based applications, their diversity and similarity of electronics drivers, as well as the key technologies...

  4. Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

    International Nuclear Information System (INIS)

    Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

    2013-01-01

    HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

  5. Absolute total and partial dissociative cross sections of pyrimidine at electron and proton intermediate impact velocities

    Energy Technology Data Exchange (ETDEWEB)

    Wolff, Wania, E-mail: wania@if.ufrj.br; Luna, Hugo; Sigaud, Lucas; Montenegro, Eduardo C. [Instituto de Física, Universidade Federal do Rio de Janeiro, PO 68528, 21941-972 Rio de Janeiro, RJ (Brazil); Tavares, Andre C. [Departamento de Física, Pontificia Universidade Católica do Rio de Janeiro, PO 38071, Rua Marquês de São Vicente 225, 22453-900 Rio de Janeiro, RJ (Brazil)

    2014-02-14

    Absolute total non-dissociative and partial dissociative cross sections of pyrimidine were measured for electron impact energies ranging from 70 to 400 eV and for proton impact energies from 125 up to 2500 keV. MOs ionization induced by coulomb interaction were studied by measuring both ionization and partial dissociative cross sections through time of flight mass spectrometry and by obtaining the branching ratios for fragment formation via a model calculation based on the Born approximation. The partial yields and the absolute cross sections measured as a function of the energy combined with the model calculation proved to be a useful tool to determine the vacancy population of the valence MOs from which several sets of fragment ions are produced. It was also a key point to distinguish the dissociation regimes induced by both particles. A comparison with previous experimental results is also presented.

  6. An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

    Science.gov (United States)

    Li, Kexin; Rakheja, Shaloo

    2018-05-01

    We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

  7. Powerful electrostatic FEL: Regime of operation, recovery of the spent electron beam and high voltage generator

    Energy Technology Data Exchange (ETDEWEB)

    Boscolo, I. [Univ. and INFN, Milan (Italy); Gong, J. [Southwest Jiaotong Univ., Chengdu (China)

    1995-02-01

    FEL, driven by a Cockcroft-Walton electrostatic accelerator with the recovery of the spent electron beam, is proposed as powerful radiation source for plasma heating. The low gain and high gain regimes are compared in view of the recovery problem and the high gain regime is shown to be much more favourable. A new design of the onion Cockcroft-Walton is presented.

  8. Ferroelasticity of t'-zirconia. 1: High-voltage electron microscopy studies of the microstructure in polydomain tetragonal zirconia

    International Nuclear Information System (INIS)

    Baither, D.; Baufeld, B.; Messerschmidt, U.; Foitzik, A.H.; Ruehle, M.

    1997-01-01

    The microstructure of polydomain tetragonal zirconia (t'-ZrO 2 ), i.e., a ZrO 2 modification exhibiting ferroelastic behavior, is studied by high-voltage electron microscopy. This material consists of three domain variants of the tetragonal phase with their c-axes nearly orthogonal to each other. Always two variants of these platelike domains are alternately arranged, forming elongated regular colonies. Hence, in both variants the common habit plane of the domains is a {110} twin plane. The colonies are of columnar shape with a longitudinal axis. They are bound by {110} planes, too, which are twin planes for the domains in the contiguous colonies. Owing to their particular structure and the helical arrangement of the adjoining colonies, the material remains coherent and pseudocubic over large macroscopic regions, although it is formed by different tetragonal domains

  9. Computer-aided analysis of power-electronic systems simulation of a high-voltage power converter

    International Nuclear Information System (INIS)

    Bordry, F.; Isch, H.W.; Proudlock, P.

    1987-01-01

    In the study of semiconductor devices, simulation methods play an important role in both the design of systems and the analysis of their operation. The authors describe a new and efficient computer-aided package program for general power-electronic systems. The main difficulty when taking into account non-linear elements, such as semiconductors, lies in determining the existence and the relations of the elementary sequences defined by the conduction or nonconduction of these components. The method does not require a priori knowledge of the state sequences of the semiconductor nor of the commutation instants, but only the circuit structure, its parameters and the commands to the controlled switches. The simulation program computes automatically both transient and steady-state waveforms for any circuit configuration. The simulation of a high-voltage power converter is presented, both for its steady-state and transient overload conditions. This 100 kV power converter (4 MW) will feed two klystrons in parallel

  10. Irradiation damage of II-VI compounds in a high-voltage electron microscope

    International Nuclear Information System (INIS)

    Yoshiie, T.; Iwanaga, H.; Shibata, N.; Suzuki, K.; Ichihara, M.; Takeuchi, S.

    1983-01-01

    Dislocation loops produced by electron irradiation in a 1 MV electron microscope have been studied above room temperature for five II-VI compounds: CdS and ZnO, with the wurtzite structure, and CdTe, ZnSe and ZnS, with the zincblende structure. For all the crystals the density of loops decreased as the irradiation temperature increased, until no loops were produced above a certain temperature which varied from crystal to crystal. However, the loop density did not depend on the electron flux intensity, suggesting the heterogeneous nucleation at some impurity complex of equilibrium concentration. Diffraction contrast analyses showed that the loops are of interstitial type in each crystal, with Burgers vectors as follows: 1/2[0001] and 1/3 for wurtzite crystals, the density ratio of the former type to the latter being increased with increasing temperature; mostly 1/3 and a few 1/2 for zincblende crystals, the latter type being presumably formed as a result of unfaulting in the former. An effect of crystal polarity on the shape of the loops in zincblende crystals has been observed. (author)

  11. Transition Metal Donor-Peptide-Acceptor Complexes: From Intramolecular Electron Transfer Reactions to the Study of Reactive Intermediates

    Energy Technology Data Exchange (ETDEWEB)

    Isied, Stephan S.

    2003-03-11

    The trans-polyproline (PII) oligomers (Figure 1) are unusually rigid peptide structures which have been extensively studied by our group for peptide mediated intramolecular electron transfer (ET) at long distances. We have previously studied ET across a series of metal ion donor (D) acceptor (A) oligoproline peptides with different distances, driving forces and reorganizational energies. The majority of these experiments involve generating the ET intermediate using pulse radiolysis methods, although more recently photochemical methods are also used. Results of these studies showed that ET across peptides can vary by more than twelve orders of magnitude. Using ruthenium bipyridine donors, ET reaction rate constants across several proline residues (n = 4 - 9) occurred in the millisecond (ms) to {micro}s timescale, thus limiting the proline peptide conformational motions to only minor changes (far smaller than the large changes that occur on the ms to sec timescale, such as trans to cis proline isomerization). The present report describes our large data base of experimental results for D-peptide-A complexes in terms of a model where the involvement of both superexchange and hopping (hole and electron) mechanisms account for the long range ET rate constants observed. Our data shows that the change from superexchange to hopping mechanisms occurs at different distances depending on the type of D and A and their interactions with the peptides. Our model is also consistent with generalized models for superexchange and hopping which have been put forward by a number of theoretical groups to account for long range ET phenomena.

  12. Digitally synthesized high purity, high-voltage radio frequency drive electronics for mass spectrometry

    Science.gov (United States)

    Schaefer, R. T.; MacAskill, J. A.; Mojarradi, M.; Chutjian, A.; Darrach, M. R.; Madzunkov, S. M.; Shortt, B. J.

    2008-09-01

    Reported herein is development of a quadrupole mass spectrometer controller (MSC) with integrated radio frequency (rf) power supply and mass spectrometer drive electronics. Advances have been made in terms of the physical size and power consumption of the MSC, while simultaneously making improvements in frequency stability, total harmonic distortion, and spectral purity. The rf power supply portion of the MSC is based on a series-resonant LC tank, where the capacitive load is the mass spectrometer itself, and the inductor is a solenoid or toroid, with various core materials. The MSC drive electronics is based on a field programmable gate array (FPGA), with serial peripheral interface for analog-to-digital and digital-to-analog converter support, and RS232/RS422 communications interfaces. The MSC offers spectral quality comparable to, or exceeding, that of conventional rf power supplies used in commercially available mass spectrometers; and as well an inherent flexibility, via the FPGA implementation, for a variety of tasks that includes proportional-integral derivative closed-loop feedback and control of rf, rf amplitude, and mass spectrometer sensitivity. Also provided are dc offsets and resonant dipole excitation for mass selective accumulation in applications involving quadrupole ion traps; rf phase locking and phase shifting for external loading of a quadrupole ion trap; and multichannel scaling of acquired mass spectra. The functionality of the MSC is task specific, and is easily modified by simply loading FPGA registers or reprogramming FPGA firmware.

  13. Digitally synthesized high purity, high-voltage radio frequency drive electronics for mass spectrometry.

    Science.gov (United States)

    Schaefer, R T; MacAskill, J A; Mojarradi, M; Chutjian, A; Darrach, M R; Madzunkov, S M; Shortt, B J

    2008-09-01

    Reported herein is development of a quadrupole mass spectrometer controller (MSC) with integrated radio frequency (rf) power supply and mass spectrometer drive electronics. Advances have been made in terms of the physical size and power consumption of the MSC, while simultaneously making improvements in frequency stability, total harmonic distortion, and spectral purity. The rf power supply portion of the MSC is based on a series-resonant LC tank, where the capacitive load is the mass spectrometer itself, and the inductor is a solenoid or toroid, with various core materials. The MSC drive electronics is based on a field programmable gate array (FPGA), with serial peripheral interface for analog-to-digital and digital-to-analog converter support, and RS232/RS422 communications interfaces. The MSC offers spectral quality comparable to, or exceeding, that of conventional rf power supplies used in commercially available mass spectrometers; and as well an inherent flexibility, via the FPGA implementation, for a variety of tasks that includes proportional-integral derivative closed-loop feedback and control of rf, rf amplitude, and mass spectrometer sensitivity. Also provided are dc offsets and resonant dipole excitation for mass selective accumulation in applications involving quadrupole ion traps; rf phase locking and phase shifting for external loading of a quadrupole ion trap; and multichannel scaling of acquired mass spectra. The functionality of the MSC is task specific, and is easily modified by simply loading FPGA registers or reprogramming FPGA firmware.

  14. Fluctuation in Interface and Electronic Structure of Single-Molecule Junctions Investigated by Current versus Bias Voltage Characteristics.

    Science.gov (United States)

    Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

    2018-03-14

    Structural and electronic detail at the metal-molecule interface has a significant impact on the charge transport across the molecular junctions, but its precise understanding and control still remain elusive. On the single-molecule scale, the metal-molecule interface structures and relevant charge transport properties are subject to fluctuation, which contain the fundamental science of single-molecule transport and implication for manipulability of the transport properties in electronic devices. Here, we present a comprehensive approach to investigate the fluctuation in the metal-molecule interface in single-molecule junctions, based on current-voltage ( I- V) measurements in combination with first-principles simulation. Contrary to conventional molecular conductance studies, this I- V approach provides a correlated statistical description of both the degree of electronic coupling across the metal-molecule interface and the molecular orbital energy level. This statistical approach was employed to study fluctuation in single-molecule junctions of 1,4-butanediamine (DAB), pyrazine (PY), 4,4'-bipyridine (BPY), and fullerene (C 60 ). We demonstrate that molecular-dependent fluctuation of σ-, π-, and π-plane-type interfaces can be captured by analyzing the molecular orbital (MO) energy level under mechanical perturbation. While the MO level of DAB with the σ-type interface shows weak distance dependence and fluctuation, the MO level of PY, BPY, and C 60 features unique distance dependence and molecular-dependent fluctuation against the mechanical perturbation. The MO level of PY and BPY with the σ+π-type interface increases with the increase in the stretch distance. In contrast, the MO level of C 60 with the π-plane-type interface decreases with the increase in the stretching perturbation. This study provides an approach to resolve the structural and electronic fluctuation in the single-molecule junctions and insight into the molecular-dependent fluctuation in

  15. On the over-collection of electrons by high voltage probes in space

    International Nuclear Information System (INIS)

    Cooke, D.L.; Katz, I.; Jongeward, G.; Mandell, M.

    1988-01-01

    It has been two decades since Parker and Murphy proposed a theory to place a rigorous upper bound on the current to an electron collecting probe in space, due to the influence of the geomagnetic field. Any greater current is then thought to involve some form of anomalous cross field transport to explain over-collection. Over-collection is commonly observed and is usually explained by invoking turbulence as a source of collisions. Although the turbulence hypothesis has some theoretical basis, no compelling kinetic theory or model has been put forth. Another possible explanation for over-collection is the ionization of the neutral gas within the charge sheath. Recently, in support of the SPEAR I rocket experiment, the three dimensional code POLAR has been used to model electron collection in a low earth orbit plasma. SPEAR I was a sounding rocket experiment that exposed to the space plasma, a pair of 10cm spherical probes biased to 44kV positive. The POLAR runs included single sphere, two sphere, and two sphere plus rocket modes. The single sphere model did not predict collection in excess of the Parker-Murphy limit. Models of two sphere collection, and of the entire experiment do however show that increased collection is possible as a result of asymetries introduced by geometry and a negative rocket body potential. These models were in close agreement with the experiment. In addition to the symmetry factor, sheath ionization is reviewed. A discussion of the role and kinetic nature of collisionless turbulence is presented

  16. Nonequilibrium segregation and phase instability in alloy films during elevated-temperature irradiation in a high-voltage electron microscope

    International Nuclear Information System (INIS)

    Lam, N.Q.; Okamoto, P.R.

    1984-05-01

    The effects of defect-production rate gradients, caused by the radial nonuniformity in the electron flux distribution, on solute segregation and phase stability in alloy films undergoing high-voltage electron-microscope (HVEM) irradiation at high temperatures are assessed. Two-dimensional (axially symmetric) compositional redistributions were calculated, taking into account both axial and transverse radial defect fluxes. It was found that when highly focused beams were employed radiation-induced segregation consisted of two stages: dominant axial segregation at the film surfaces at short irradiation times and competitive radial segregation at longer times. The average alloy composition within the irradiated region could differ greatly from that irradiated with a uniform beam, because of the additional atom transport from or to the region surrounding the irradiated zone under the influence of radial fluxes. As a result, damage-rate gradient effects must be taken into account when interpreting in-situ HVEM observations of segregation-induced phase instabilities. The theoretical predictions are compared with experimental observations of the temporal and spatial dependence of segregation-induced precipitation in thin films of Ni-Al, Ni-Ge and Ni-Si solid solutions

  17. Nonequilibrium segregation and phase instability in alloy films during elevated-temperature irradiation in a high-voltage electron microscope

    Science.gov (United States)

    Lam, N. Q.; Okamoto, P. R.

    1984-05-01

    The effects of defect-production rate gradients, caused by the radial nonuniformity in the electron flux distribution, on solute segregation and phase stability in alloy films undergoing high-voltage electron-microscope (HVEM) irradiation at high temperatures are assessed. Two-dimensional (axially symmetric) compositional redistributions were calculated, taking into account both axial and transverse radial defect fluxes. It was found that when highly focused beams were employed radiation-induced segregation consisted of two stages: dominant axial segregation at the film surfaces at short irradiation times and competitive radial segregation at longer times. The average alloy composition within the irradiated region could differ greatly from that irradiated with a uniform beam, because of the additional atom transport from or to the region surrounding the irradiated zone under the influence of radial fluxes. Damage-rate gradient effects must be taken into account when interpreting in-situ HVEM observations of segregation-induced phase instabilities. The theoretical predictions are compared with experimental observations of the temporal and spatial dependence of segregation-induced precipitation in thin films of Ni-Al, Ni-Ge and Ni-Si solid solutions.

  18. Electron irradiation effects and recovery of defect clusters in TiC through high voltage electron microscope

    International Nuclear Information System (INIS)

    Iseki, Michio; Kirihara, Tomoo; Ushijima, Susumu; Ohashi, Hideki.

    1984-01-01

    Titanium carbide(TiCsub(0.8)) prepared by plasma-jet melting was irradiated to an electron dose less than 6x10 26 e/m 2 from room temperature to 800 0 C. The number density and average size of the defect clusters formed at irradiation temperatures below 400 0 C were less than those formed above 600 0 C. Since TiCsub(0.8) has an order structure of carbon below around 600 0 C, the ordered phase is more resistant to radiation than the disordered one in higher temperatures. The clusters decrease in number density and develop to dislocation loops during post irradiation annealing above 1,000 0 C. The burgers vector of the loops was determined as a/2 . There were two temperature region for the recovery of the defect clusters. It is conceivable that the first one appeared in the temperature region around 600 0 C caused by migration of carbon vacancies, and the second one appeared above 1,000 0 C by migration of titanium vacancies. (author)

  19. Microstructural and Electronic Origins of Open-Circuit Voltage Tuning in Organic Solar Cells Based on Ternary Blends

    KAUST Repository

    Mollinger, Sonya A.

    2015-09-22

    © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Organic ternary heterojunction photovoltaic blends are sometimes observed to undergo a gradual evolution in open-circuit voltage (Voc) with increasing amounts of a second donor or an acceptor. The Voc is strongly correlated with the energy of the charge transfer state in the blend, but this value depends on both local and mesoscopic orders. In this work, the behavior of Voc in the presence of a wide range of interfacial electronic states is investigated. The key charge transfer state interfaces responsible for Voc in several model systems with varying morphology are identified. Systems consisting of one donor with two fullerene molecules and of one acceptor with a donor polymer of varying regio-regularity are used. The effects from the changing energetic disorder in the material and from the variation due to a law of simple mixtures are quantified. It has been found that populating the higher-energy charge transfer states is not responsible for the observed change in Voc upon the addition of a third component. Aggregating polymers and miscible fullerenes are compared, and it has been concluded that in both cases charge delocalization, aggregation, and local polarization effects shift the lowest-energy charge transfer state distribution. The open-circuit voltage evolution and charge transfer state interfaces in ternary organic photovoltaic blends are investigated using several model systems. The changes in subgap spectra from energetic disorder and increased population of higher energy states are analyzed and the lowest charge transfer state distribution is observed to shift due to local aggregation and delocalization effects.

  20. Microstructural and Electronic Origins of Open-Circuit Voltage Tuning in Organic Solar Cells Based on Ternary Blends

    KAUST Repository

    Mollinger, Sonya A.; Vandewal, Koen; Salleo, Alberto

    2015-01-01

    © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Organic ternary heterojunction photovoltaic blends are sometimes observed to undergo a gradual evolution in open-circuit voltage (Voc) with increasing amounts of a second donor or an acceptor. The Voc is strongly correlated with the energy of the charge transfer state in the blend, but this value depends on both local and mesoscopic orders. In this work, the behavior of Voc in the presence of a wide range of interfacial electronic states is investigated. The key charge transfer state interfaces responsible for Voc in several model systems with varying morphology are identified. Systems consisting of one donor with two fullerene molecules and of one acceptor with a donor polymer of varying regio-regularity are used. The effects from the changing energetic disorder in the material and from the variation due to a law of simple mixtures are quantified. It has been found that populating the higher-energy charge transfer states is not responsible for the observed change in Voc upon the addition of a third component. Aggregating polymers and miscible fullerenes are compared, and it has been concluded that in both cases charge delocalization, aggregation, and local polarization effects shift the lowest-energy charge transfer state distribution. The open-circuit voltage evolution and charge transfer state interfaces in ternary organic photovoltaic blends are investigated using several model systems. The changes in subgap spectra from energetic disorder and increased population of higher energy states are analyzed and the lowest charge transfer state distribution is observed to shift due to local aggregation and delocalization effects.

  1. Influence of the parameters of supplying pulses and polarization voltage on the signal and shape of current characteristics of the electron capture detector

    International Nuclear Information System (INIS)

    Lasa, J.; Sliwka, I.; Drozdowicz, B.

    1989-01-01

    The paper contains results of measurements of current characteristics and of the signal for the constant concentration of freon F-11 of the ECD supplied with pulse voltage of changeable time of pulse duration t p , amplitude U 1 and the time of pulse repetition t r . In the course of measurements the detector worked at temperature 573 K with the additional constant polarization voltage. The polarization voltage has been observed to cause the effect of hypercoulometry. The presented mathematical analysis helps to determine the values of the coefficient of efficiency of electron capture p, the coefficient of electron loss k D , the coefficient of collecting of electric charges by the anode k' 3 and the coefficient of collecting of electric charges by the detector cathode k u . The coefficients are determined on the basis of experimental measurements. An attempt of physical interpretation of calculated values of these coefficients and their dependence on the parameters of the pulses supplying the detector has been presented. This interpretation requires the assumption that in some pulse periods t r the concentration of positive ions in the detector considerably exceeds concentration n 0 + = √a xα e /V, where a is an efficiency of the carrier gas ionization, α e is the coefficient of the electron-ion recombination and V is the detector volume. This statement helping to describe the effects observed in the electron capture polarized by voltage U a contradicts the recognized concept that the concentration of positive ions in the detector does not exceed the concentration n 0 + . The paper shows that the detector of the cylindrical construction, supplied with a pulse voltage can be used for coulometric measurements and the voltage polarizing the cathode can cause an effect of hypercoulometry. 33 figs., 9 refs. (author)

  2. Electron-deuteron deep-inelastic scattering with spectator nucleon tagging and final-state interactions at intermediate x

    Science.gov (United States)

    Strikman, M.; Weiss, C.

    2018-03-01

    We consider electron-deuteron deep-inelastic scattering (DIS) with detection of a proton in the nuclear fragmentation region ("spectator tagging") as a method for extracting the free neutron structure functions and studying their nuclear modifications. Such measurements could be performed at a future electron-ion collider (EIC) with suitable forward detectors. The measured proton recoil momentum (≲100 MeV in the deuteron rest frame) specifies the deuteron configuration during the high-energy process and permits a controlled theoretical treatment of nuclear effects. Nuclear and nucleonic structure are separated using methods of light-front quantum mechanics. The impulse approximation to the tagged DIS cross section contains the free neutron pole, which can be reached by on-shell extrapolation in the recoil momentum. Final-state interactions (FSIs) distort the recoil momentum distribution away from the pole. In the intermediate-x region 0.1 rest frame momenta ≲1 GeV , target fragmentation region). We construct a schematic model describing this effect, using final-state hadron distributions measured in nucleon DIS experiments and low-energy hadron scattering amplitudes. We investigate the magnitude of FSIs, their dependence on the recoil momentum (angular dependence, forward/backward regions), their analytic properties, and their effect on the on-shell extrapolation. We comment on the prospects for neutron structure extraction in tagged DIS with an EIC. We discuss possible extensions of the FSI model to other kinematic regions (large/small x ). In tagged DIS at x ≪0.1 FSIs resulting from diffractive scattering on the nucleons become important and require separate treatment.

  3. The use of intermediate electron acceptors to enhance MTT bioreduction in a microculture tetrazolium assay for human growth hormone.

    Science.gov (United States)

    Goodwin, C J; Holt, S J; Downes, S; Marshall, N J

    1996-01-01

    We contrast the effects of three intermediate electron acceptors (IEAs) on the highly quantitative ESTA bioassay for human growth hormone. This is a microculture tetrazolium assay based upon the in vitro reduction of the tetrazolium salt MTT, by Nb2 cells which have been activated with hGH. Each of the IEAs influenced MTT-formazan production in a distinctive manner. The two quinonoids, namely menadione and co-enzyme Q0 markedly increased the MTT-formazan produced by hormone activated Nb2 cells and thereby amplified the response of our bioassay for human growth hormone (hGH). The exceptionally low bioassay baseline which is characteristic of the unstimulated Nb2 cells when only MTT is added was retained in the presence of CoQ0, but was greatly increased by menadione. Phenazine methosulphate, which is the most widely used redox intermediary in microculture tetrazolium assays, also increased the baseline, but had only a minimal additional effect on MTT reduction by activated Nb2 cells. We conclude that CoQ0 is the preferred IEA for this ESTA bioassay for hGH.

  4. Electronic Structure of the Ferryl Intermediate in the α-Ketoglutarate Dependent Non-Heme Iron Halogenase SyrB2: Contributions to H Atom Abstraction Reactivity

    Czech Academy of Sciences Publication Activity Database

    Srnec, Martin; Wong, S. D.; Matthews, M. L.; Krebs, C.; Bollinger, J. M.; Solomon, E. I.

    2016-01-01

    Roč. 138, č. 15 (2016), s. 5110-5122 ISSN 0002-7863 R&D Projects: GA ČR(CZ) GJ15-10279Y Institutional support: RVO:61388955 Keywords : Ferryl intermediate * syringomycin halogenase * electronic structure Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 13.858, year: 2016

  5. Note: Self-biased voltage to suppress secondary electrons by a ZnO varistor in a compact pulsed neutron generator

    Science.gov (United States)

    Yang, Z.; Li, X.; Li, J.; Long, J. D.; Lan, C. H.; Wang, T.; Dong, P.; He, J. L.

    2017-03-01

    A large amount of back streaming electrons will bring about a part of current drain on power supply, cause sparking or high-voltage breakdowns, and affect the neutron yield and waveform for a compact sealed-tube pulsed neutron generator. A novel idea which uses a ZnO varistor to provide a constant self-biased voltage to suppress the secondary electrons is introduced. The I-V curve for the ZnO varistor was measured in the experiment. The effects of suppressing the secondary electrons were investigated using a ZnO varistor, linear resistors, and an independent power supply, respectively. The results show that the secondary electrons are suppressed effectively by the compact ZnO varistor, while not increasing the size and the component of the device. It is a promising design for compact sealed-tube neutron generators.

  6. Military Curricula for Vocational & Technical Education. Basic Electricity and Electronics Individualized Learning System. CANTRAC A-100-0010. Module Five: Relationships of Current, Voltage, and Resistance. Study Booklet.

    Science.gov (United States)

    Chief of Naval Education and Training Support, Pensacola, FL.

    This individualized learning module on the relationships of current, voltage, and resistance is one in a series of modules for a course in basic electricity and electronics. The course is one of a number of military-developed curriculum packages selected for adaptaticn to vocational instructional and curriculum development in a civilian setting.…

  7. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  8. Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

    Science.gov (United States)

    Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

    2015-10-21

    The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

  9. Formation of 1.4 MeV runaway electron flows in air using a solid-state generator with 10 MV/ns voltage rise rate

    Science.gov (United States)

    Mesyats, G. A.; Pedos, M. S.; Rukin, S. N.; Rostov, V. V.; Romanchenko, I. V.; Sadykova, A. G.; Sharypov, K. A.; Shpak, V. G.; Shunailov, S. A.; Ul'masculov, M. R.; Yalandin, M. I.

    2018-04-01

    Fulfillment of the condition that the voltage rise time across an air gap is comparable with the time of electron acceleration from a cathode to an anode allows a flow of runaway electrons (REs) to be formed with relativistic energies approaching that determined by the amplitude of the voltage pulse. In the experiment described here, an RE energy of 1.4 MeV was observed by applying a negative travelling voltage pulse of 860-kV with a maximum rise rate of 10 MV/ns and a rise time of 100-ps. The voltage pulse amplitude was doubled at the cathode of the 2-cm-long air gap due to the delay of conventional pulsed breakdown. The above-mentioned record-breaking voltage pulse of ˜120 ps duration with a peak power of 15 GW was produced by an all-solid-state pulsed power source utilising pulse compression/sharpening in a multistage gyromagnetic nonlinear transmission line.

  10. Computer control of the high-voltage power supply for the DIII-D electron cyclotron heating system

    International Nuclear Information System (INIS)

    Clow, D.D.; Kellman, D.H.

    1992-01-01

    This paper reports on the DIII-D Electron Cyclotron Heating (ECH) high voltage power supply which is controlled by a computer. Operational control is input via keyboard and mouse, and computer/power supply interfact is accomplished with a Computer Assisted Monitoring and Control (CAMAC) system. User-friendly tools allow the design and layout of simulated control panels on the computer screen. Panel controls and indicators can be changed, added or deleted, and simple editing of user-specific processes can quickly modify control and fault logic. Databases can be defined, and control panel functions are easily referred to various data channels. User-specific processes are written and linked using Fortran, to manage control and data acquisition through CAMAC. The resulting control system has significant advantages over the hardware it emulates: changes in logic, layout, and function are quickly and easily incorporated; data storage, retrieval, and processing are flexible and simply accomplished; physical components subject to wear and degradation are minimized. In addition, the system can be expanded to multiplex control of several power supplies, each with its own database, through a single computer console

  11. Best use of high-voltage, high-powered electron beams: a new approach to contract irradiation services

    International Nuclear Information System (INIS)

    Watanabe, T.

    2000-01-01

    Japan's first high-voltage, high-powered electron beam processing center is scheduled to come on-line during the first half of 1999. The center explores both challenges and opportunities of how best to use the 200 kW 10 MeV unit and its 5 MeV X-ray line. In particular, Nuclear Fuel Industries, Ltd. (NFI) has expanded the traditional model of a contract irradiation facility to include a much broader scope of services such as door-to-door transport, storage, and direct distribution to its customer's end-users. The new business scope not only finds new value-added components in a competitive marketplace, but serves to provide a viable mechanism to take advantage of the processing logistics of high throughput irradiation units. As such, the center features a high-capacity warehousing system, monitored by a newly developed PCMS (plant control management system), which has been comprehensively integrated into the irradiation unit's handling system, and will require only minimal human resources for its high rate of material handling. The identification and development of initial markets for this first unit will be discussed, concluding with how this same operational philosophy can help break open new irradiation segments in medical devices, consumer goods, animal feed, and food markets and NFI's other efforts in these same areas. (author)

  12. Void formation and growth in copper-nickel alloys during irradiation in the high voltage electron microscope

    International Nuclear Information System (INIS)

    Leffers, T.; Singh, B.N.; Barlow, P.

    1977-05-01

    The formation and growth of voids during irradiation in a high-voltage electron microscope were studied in copper and Cu-Ni alloys. For each composition, the range of irradiation temperatures from 250 deg C to 550 deg C was covered. The development of the irradiation-induced dislocation structure was also studied. At irradiation temperatures up to 450 deg C, the void swelling decreased rapidly with increasing Ni content and became practically zero for Cu-10%Ni. The decrease in swelling was produced mainly by decreased void growth (and not by decreased void number density). At 550 deg C the void swelling increased with increasing Ni content up to 5%, whereas for Cu-10%Ni the swelling became practically zero; again the changes in swelling with Ni content were mainly determined by changes in void growth. The reduction in void swelling and growth due to alloying is ascribed to vacancy or interstitial trapping at submicroscopic Ni precipitates, i.e. to the precipitates acting as recombination centres. The increase in void swelling and growth with increasing Ni content, on the other hand, is ascribed to dislocation climb sources that emit loops, and hence produce a fairly high dislocation density at a temperature where there are only few dislocations in pure copper or Cu-Ni with lower Ni content. (author)

  13. A Manufacturing Cost and Supply Chain Analysis of SiC Power Electronics Applicable to Medium-Voltage Motor Drives

    Energy Technology Data Exchange (ETDEWEB)

    Horowitz, Kelsey [National Renewable Energy Lab. (NREL), Golden, CO (United States); Remo, Timothy [National Renewable Energy Lab. (NREL), Golden, CO (United States); Reese, Samantha [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2017-03-24

    Wide bandgap (WBG) semiconductor devices are increasingly being considered for use in certain power electronics applications, where they can improve efficiency, performance, footprint, and, potentially, total system cost compared to systems using traditional silicon (Si) devices. Silicon carbide (SiC) devices in particular -- which are currently more mature than other WBG devices -- are poised for growth in the coming years. Today, the manufacturing of SiC wafers is concentrated in the United States, and chip production is split roughly equally between the United States, Japan, and Europe. Established contract manufacturers located throughout Asia typically carry out manufacturing of WBG power modules. We seek to understand how global manufacturing of SiC components may evolve over time by illustrating the regional cost drivers along the supply chain and providing an overview of other factors that influence where manufacturing is sited. We conduct this analysis for a particular case study where SiC devices are used in a medium-voltage motor drive.

  14. Computer control of the high-voltage power supply for the DIII-D Electron Cyclotron Heating system

    International Nuclear Information System (INIS)

    Clow, D.D.; Kellman, D.H.

    1991-10-01

    The D3-D Electron Cyclotron Heating (ECH) high voltage power supply is controlled by a computer. Operational control is input via keyboard and mouse, and computer/power supply interface is accomplished with a Computer Assisted Monitoring and Control (CAMAC) system. User-friendly tools allow the design and layout of simulated control panels on the computer screen. Panel controls and indicators can be changed, added or deleted, and simple editing of user-specific processes can quickly modify control and fault logic. Databases can be defined, and control panel functions are easily referred to various data channels. User-specific processes are written and linked using Fortran, to manage control and data acquisition through CAMAC. The resulting control system has significant advantages over the hardware it emulates: changes in logic, layout, and function are quickly and easily incorporated; data storage, retrieval, and processing are flexible and simply accomplished, physical components subject to wear and degradation are minimized. In addition, the system can be expanded to multiplex control of several power supplied, each with its own database, through a single computer and console. 5 refs., 4 figs., 1 tab

  15. I. Exchange currents in electron scattering from light nuclei. II. Heavy-ion scattering at intermediate and high energy

    International Nuclear Information System (INIS)

    Dubach, J.F.

    1976-01-01

    The purpose of this work is to develop a formalism that will allow one to search the wide variety of transitions presented by nuclei in order to locate situations in which the exchange-current effects are important or dominant and thus allow one to study the contributions of the meson exchanges to the electromagnetic densities within the nucleus. The nuclei studied are assumed to be described in a shell model using harmonic oscillator wave functions. The formalism needed to allow one to do a multipole analysis of these exchange currents within 1s and 1p nuclei is developed. This formalism is then applied to an examination of electron scattering from a series of light nuclei: 3 He, 6 Li, 7 Li, 9 Be, and 10 B. Three significant effects due to the inclusion of exchange currents are seen: (1) The exchange currents can often introduce new structure into the form factors. (2) At larger momentum transfer (700 to 1000 MeV/c) the exchange current contributions to the form factor dominate the simpler one-body form factor by a few orders of magnitude. (3) The exchange currents can excite E4 and M5 multipoles in the p shell which are forbidden to the simpler one-body currents. The elastic scattering of two heavy ions at intermediate and high energies (compared to the Coulomb barrier) is examined in the formalism of the WKB and ''Glauber theory'' approximations. As a concrete example, the scattering of 16 O from 60 Ni is studied assuming an optical-model potential that fits elastic scattering data at low energies. One immediate result is that the WKB approximation agrees quite well with ''exact'' numerical calculations at energies as low as 60 MeV. The Glauber theory fails below about 1 GeV but correction terms are developed that can extend the usefulness of the Glauber theory to much lower energies. The model problem of scattering from a black-sphere model of the nucleus is briefly examined

  16. Intermediate treatments

    Science.gov (United States)

    John R. Jones; Wayne D. Shepperd

    1985-01-01

    Intermediate treatments are those applied after a new stand is successfully established and before the final harvest. These include not only intermediate cuttings - primarily thinning - but also fertilization, irrigation, and protection of the stand from damaging agents.

  17. Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators.

    Science.gov (United States)

    Cheng, Xin-bing; Liu, Jin-liang; Qian, Bao-liang; Zhang, Yu; Zhang, Hong-bo

    2009-11-01

    A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT.

  18. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

  19. Measurement of ejected electrons from collisions of He+ ions with He, Ne, and Ar at the intermediate energies

    International Nuclear Information System (INIS)

    Tokoro, Nobuhiro; Oda, Nobuo

    1985-01-01

    The doubly differential cross sections for electron production, differential in angle and energy of the electrons, for 5-25 keV He + impact on helium, neon and argon have been measured in the electron energy range of 2-200 eV at the ejection angles from 30 0 to 150 0 with respect to the incident ion beam. The characteristic features of continnum parts of ejected electron spectra are described for each collision system. (author)

  20. A compact control system to achieve stable voltage and low jitter trigger for repetitive intense electron-beam accelerator based on resonant charging

    Science.gov (United States)

    Qiu, Yongfeng; Liu, Jinliang; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao

    2017-08-01

    A compact control system based on Delphi and Field Programmable Gate Array(FPGA) is developed for a repetitive intense electron-beam accelerator(IEBA), whose output power is 10GW and pulse duration is 160ns. The system uses both hardware and software solutions. It comprises a host computer, a communication module and a main control unit. A device independent applications programming interface, devised using Delphi, is installed on the host computer. Stability theory of voltage in repetitive mode is analyzed and a detailed overview of the hardware and software configuration is presented. High voltage experiment showed that the control system fulfilled the requests of remote operation and data-acquisition. The control system based on a time-sequence control method is used to keep constant of the voltage of the primary capacitor in every shot, which ensured the stable and reliable operation of the electron beam accelerator in the repetitive mode during the experiment. Compared with the former control system based on Labview and PIC micro-controller developed in our laboratory, the present one is more compact, and with higher precision in the time dimension. It is particularly useful for automatic control of IEBA in the high power microwave effects research experiments where pulse-to-pulse reproducibility is required.

  1. First direct electron microscopic visualization of a tight spatial coupling between GABAA-receptors and voltage-sensitive calcium channels

    DEFF Research Database (Denmark)

    Hansen, Gert Helge; Belhage, B; Schousboe, A

    1992-01-01

    Using cerebellar granule neurons in culture it was demonstrated that exposure of the cells to the GABAA receptor agonist 4,5,6,7-tetrahydroisoxazolo[5,4-c]pyridin-3-ol (THIP) leads to an increase in the number of voltage-gated calcium channels as revealed by quantitative preembedding indirect imm...

  2. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

  3. Demonstration of Li-based alloy coatings as low-voltage stable electron-emission surfaces for field-emission devices

    International Nuclear Information System (INIS)

    Auciello, O.; Krauss, A.R.; Gruen, D.M.; Shah, P.; Corrigan, T.; Kordesch, M.E.; Chang, R.P.; Barr, T.L.

    1999-01-01

    Alkali metals have extremely low work functions and are, therefore, expected to result in significant enhancement of the electron emission if they are used as coatings on Mo or Si microtip field-emission arrays (FEAs). However, the alkali metals are physically and chemically unstable in layers exceeding a few Angstrom in thickness. Maximum enhancement of electron emission occurs for alkali - metal layers 0.5 - 1 ML thick, but it is extremely difficult to fabricate and maintain such a thin alkali - metal coating. We present here an alternative means of producing chemically and thermally stable, self-replenishing lithium coatings approximately 1 ML thick, which results in a 13-fold reduction in the threshold voltage for electron emission compared with uncoated Si FEAs. copyright 1999 American Institute of Physics

  4. Evaluation of the Electronic Structure of Single-Molecule Junctions Based on Current-Voltage and Thermopower Measurements: Application to C60 Single-Molecule Junction.

    Science.gov (United States)

    Komoto, Yuki; Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

    2017-02-16

    The electronic structure of molecular junctions has a significant impact on their transport properties. Despite the decisive role of the electronic structure, a complete characterization of the electronic structure remains a challenge. This is because there is no straightforward way of measuring electron spectroscopy for an individual molecule trapped in a nanoscale gap between two metal electrodes. Herein, a comprehensive approach to obtain a detailed description of the electronic structure in single-molecule junctions based on the analysis of current-voltage (I-V) and thermoelectric characteristics is described. It is shown that the electronic structure of the prototypical C 60 single-molecule junction can be resolved by analyzing complementary results of the I-V and thermoelectric measurement. This combined approach confirmed that the C 60 single-molecule junction was highly conductive with molecular electronic conductances of 0.033 and 0.003 G 0 and a molecular Seebeck coefficient of -12 μV K -1 . In addition, we revealed that charge transport was mediated by a LUMO whose energy level was located 0.5≈0.6 eV above the Fermi level of the Au electrode. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. About the contrast of δ' precipitates in bulk Al-Cu-Li alloys in reflection mode with a field-emission scanning electron microscope at low accelerating voltage.

    Science.gov (United States)

    Brodusch, Nicolas; Voisard, Frédéric; Gauvin, Raynald

    2017-11-01

    Characterising the impact of lithium additions in the precipitation sequence in Al-Li-Cu alloys is important to control the strengthening of the final material. Since now, transmission electron microscopy (TEM) at high beam voltage has been the technique of choice to monitor the size and spatial distribution of δ' precipitates (Al 3 Li). Here we report on the imaging of the δ' phase in such alloys using backscattered electrons (BSE) and low accelerating voltage in a high-resolution field-emission scanning electron microscope. By applying low-energy Ar + ion milling to the surface after mechanical polishing (MP), the MP-induced corroded layers were efficiently removed and permitted the δ's to be visible with a limited impact on the observed microstructure. The resulting BSE contrast between the δ's and the Al matrix was compared with that obtained using Monte Carlo modelling. The artefacts possibly resulting from the sample preparation procedure were reviewed and discussed and permitted to confirm that these precipitates were effectively the metastable δ's. The method described in this report necessitates less intensive sample preparation than that required for TEM and provides a much larger field of view and an easily interpretable contrast compared to the transmission techniques. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

  6. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  7. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    International Nuclear Information System (INIS)

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-01-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

  8. The use of the JEM 1250 high voltage electron microscope (HVEM) of the university of Antwerp (RUCA) as an instrument for void swelling simulation experiments

    International Nuclear Information System (INIS)

    Snijkers, M.; Janssens, C.

    1978-01-01

    The working procedure has been established for the use of the high voltage electron microscope of the University of Antwerp (RUCA) as an apparatus for testing the swelling behavior of ferritic and austenitic stainless steels. The local temperature increase of the specimen due to beam heating was measured. The results are in good agreement with measurements done in other laboratories. The intensity of the transmitted beam has been measured as a function of specimen thickness (for thicknesses smaller than a few μ) The operation conditions are described for carrying out irradiation experiments and for taking stereo pairs. (author)

  9. Improved calculations of the electronic and nuclear energy losses for light ions penetrating H and He targets at intermediate velocities

    Energy Technology Data Exchange (ETDEWEB)

    Grande, P.L. [Rio Grande do Sul Univ., Porto Alegre, RS (Brazil). Inst. de Fisica; Schiwietz, G. [Hahn-Meitner-Institut Berlin GmbH (Germany). Dept. FD

    1994-06-01

    A review is given on the use of the coupled-channel method to calculate the electronic and nuclear energy loss of ions penetrating the matter. This first principle calculation based on an expansion of the time dependent electronic wavefunction in terms of atomic orbitals has been applied to evaluate the impact parameter dependence of the electronic energy loss, the stopping cross-section and the fluctuation is energy loss of ions colliding with H and He atoms at energies of 10 keV/amu to 500 keV/amu. The results have been compared to experimental data as well as to others existing models, local density approximation in an electron gas target, harmonic oscillator target treatment and first order plane-wave-Born approximation. (author). 63 refs, 11 figs.

  10. Matrix elements of intraband transitions in quantum dot intermediate band solar cells: the influence of quantum dot presence on the extended-state electron wave-functions

    International Nuclear Information System (INIS)

    Nozawa, Tomohiro; Arakawa, Yasuhiko

    2014-01-01

    The intraband transitions which are essential for quantum dot intermediate band solar cells (QD IBSCs) are theoretically investigated by estimating the matrix elements from a ground bound state, which is often regarded as an intermediate band (IB), to conduction band (CB) states for a structure with a quantum dot (QD) embedded in a matrix (a QD/matrix structure). We have found that the QD pushes away the electron envelope functions (probability densities) from the QD region in almost all quantum states above the matrix CB minimum. As a result, the matrix elements of the intraband transitions in the QD/matrix structure are largely reduced, compared to those calculated assuming the envelope functions of free electrons (i.e., plane-wave envelope functions) in a matrix structure as the final states of the intraband transitions. The result indicates the strong influence of the QD itself on the intraband transitions from the IB to the CB states in QD IBSC devices. This work will help in better understanding the problem of the intraband transitions and give new insight, that is, engineering of quantum states is indispensable for the realization of QD IBSCs with high solar energy conversion efficiencies. (paper)

  11. Three-dimensional fine structure of the organization of microtubules in neurite varicosities by ultra-high voltage electron microscope tomography.

    Science.gov (United States)

    Nishida, Tomoki; Yoshimura, Ryoichi; Endo, Yasuhisa

    2017-09-01

    Neurite varicosities are highly specialized compartments that are involved in neurotransmitter/ neuromodulator release and provide a physiological platform for neural functions. However, it remains unclear how microtubule organization contributes to the form of varicosity. Here, we examine the three-dimensional structure of microtubules in varicosities of a differentiated PC12 neural cell line using ultra-high voltage electron microscope tomography. Three-dimensional imaging showed that a part of the varicosities contained an accumulation of organelles that were separated from parallel microtubule arrays. Further detailed analysis using serial sections and whole-mount tomography revealed microtubules running in a spindle shape of swelling in some other types of varicosities. These electron tomographic results showed that the structural diversity and heterogeneity of microtubule organization supported the form of varicosities, suggesting that a different distribution pattern of microtubules in varicosities is crucial to the regulation of varicosities development.

  12. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  13. Studies on the radicidation of natural food colorants. Effects of electron energy (accelerating voltages) and dose rate of ionizing radiation on functional properties of beet red colorant

    International Nuclear Information System (INIS)

    Higashimura, Yutaka; Tada, Mikiro; Furuta, Masakazu

    2003-01-01

    In order to the practical use of radicidation of beet red, natural food colorant with low heat stability and high possibility of microbe contamination, we studied on the energy dependency and dose rate effect for the influence on functional properties of the beet red colorant. For the elucidation of energy dependency, the γ-ray (1.33 MeV) and electron beams with different accelerating voltages (0.75, 1, 2.5, 5 and 10 MeV) were used. The dose rate effect was studied under the different dose rate by using γ-ray (0.723, 1.91 and 4.55 kGy/h) and electron beams with accelerating voltage of 10 MeV (1.0 x 10 3 , 2.6 x 10 3 , 7.0 x 10 3 , 7.0 x 10 3 , 2.0 x 10 4 and 5.0 x 10 4 kGy/h). The results obtained in this study showed that regardless of these energy and dose rate, the functional properties of the beet red colorant were little affected by irradiation less than 25 kGy of ionizing radiations. (author)

  14. Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

    International Nuclear Information System (INIS)

    Ma Da; Luo Xiao-Rong; Wei Jie; Tan Qiao; Zhou Kun; Wu Jun-Feng

    2016-01-01

    A new ultra-low specific on-resistance (R on,sp ) vertical double diffusion metal–oxide–semiconductor field-effect transistor (VDMOS) with continuous electron accumulation (CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the R on,sp but also makes the R on,sp almost independent of the n-pillar doping concentration (N n ). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the N n , and further reduces the R on,sp . Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the R on,sp by 80% compared with the conventional super-junction VDMOS (CSJ-VDMOS) at the same high breakdown voltage (BV). (paper)

  15. Electron scattering by Ne, Ar and Kr at intermediate and high energies, 0.5-10 keV

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, G.; Roteta, M.; Manero, F. [Centro de Investigaciones Energeticas Medioambientales y Tecnologicas (CIEMAT), Departamento de Fusion y Particulas Elementales, Madrid (Spain); Blanco, F. [Universidad Complutense de Madrid, Facultad de Fisica, Departamento de Fisica Atomica Molecular y Nuclear, Madrid (Spain); Williart, A. [Universidad Nacional de Educacion a Distancia, Facultad de Ciencias, Departamento de Fisica de los Materiales, Madrid (Spain)

    1999-04-28

    Semi-empirical total cross sections for electron scattering of noble gases (Ne, Ar and Kr) in the energy range 0.5-10 keV have been obtained by combining transmission-beam measurements for impact energies up to 6 keV with an asymptotic behaviour at higher energies according to the Born-Bethe approximation. The influence of the forward electron scattering on the experimental system has been evaluated by means of a Monte Carlo electron transport simulation. Theoretical values have also been obtained by applying the Born approximation in the case of inelastic processes and by means of an atomic scattering potential for the elastic part. The results of these calculations show an excellent agreement with the semi-empirical values in the above-mentioned energy range. (author)

  16. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Science.gov (United States)

    2010-07-01

    ... Public Contracts and Property Management Federal Property Management Regulations System FEDERAL PROPERTY MANAGEMENT REGULATIONS SUPPLY AND PROCUREMENT 26-PROCUREMENT SOURCES AND PROGRAM 26.5-GSA Procurement... 41 Public Contracts and Property Management 2 2010-07-01 2010-07-01 true Electronic data...

  17. The molecular electron density distribution meeting place of X-ray diffraction and quantum chemistry intermediate - between theory and experiment

    NARCIS (Netherlands)

    Feil, D.; Feil, Dirk

    1992-01-01

    Quantum chemistry and the concepts used daily in chemistry are increasingly growing apart. Among the concepts that are able to bridge the gap between theory and experimental practice, electron density distribution has an important place. The study of this distribution has led to new developments in

  18. Experimental investigation on the development characteristics of initial electrons in a gas pressurized closing switch under DC voltage

    Science.gov (United States)

    Rongxiao, ZHAI; Mengtong, QIU; Weixi, LUO; Peitian, CONG; Tao, HUANG; Jiahui, YIN; Tianyang, ZHANG

    2018-04-01

    As one of the most important elements in linear transformer driver (LTD) based systems, the gas pressurized closing switches are required to operate with a very low prefire probability during the DC-charging process to ensure reliable operation and stable output of the whole pulsed power system. The most direct and effective way to control the prefire probability is to select a suitable working coefficient. The study of the development characteristics of the initially generated electrons is useful for optimizing the working coefficient and improving the prefire characteristic of the switches. In this paper an ultraviolet pulsed laser is used to generate initial electrons inside the gap volume. A current measuring system is used to measure the time-dependent current generated by the growth of the initial electrons so as to study the development characteristics of the electrons under different working coefficients. Experimental results show that the development characteristics of the initial electrons are influenced obviously by the working coefficient. With the increase of the working coefficient, the development degree of the electrons increases consequently. At the same times, there is a threshold of working coefficient which produces the effect of ionization on electrons. The range of the threshold has a slow growth but remains close to 65% with the gas pressure increase. When the working coefficient increases further, γ processes are starting to be generated inside the gap volume. In addition, an optimal working coefficient beneficial for improving the prefire characteristic is indicated and further tested.

  19. Low-voltage gyrotrons

    International Nuclear Information System (INIS)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-01-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5–10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%–2% in the submillimeter wavelength region).

  20. Assessing electronic cigarette emissions: linking physico-chemical properties to product brand, e-liquid flavoring additives, operational voltage and user puffing patterns.

    Science.gov (United States)

    Zhao, Jiayuan; Nelson, Jordan; Dada, Oluwabunmi; Pyrgiotakis, Georgios; Kavouras, Ilias G; Demokritou, Philip

    2018-02-01

    Users of electronic cigarettes (e-cigs) are exposed to particles and other gaseous pollutants. However, major knowledge gaps on the physico-chemical properties of such exposures and contradictory data in published literature prohibit health risk assessment. Here, the effects of product brand, type, e-liquid flavoring additives, operational voltage, and user puffing patterns on emissions were systematically assessed using a recently developed, versatile, e-cig exposure generation platform and state-of-the-art analytical methods. Parameters of interest in this systematic evaluation included two brands (A and B), three flavors (tobacco, menthol, and fruit), three types of e-cigs (disposable, pre-filled, and refillable tanks), two puffing protocols (4 and 2 s/puff), and four operational voltages (2.2-5.7 V). Particles were generated at a high number concentration (10 6 -10 7 particles/cm 3 ). The particle size distribution was bi-modal (∼200 nm and 1 µm). Furthermore, organic species (humectants propylene glycol and glycerin, nicotine) that were present in e-liquid and trace metals (potassium and sodium) that were present on e-cig heating coil were also released into the emission. In addition, combustion-related byproducts, such as benzene and toluene, were also detected in the range of 100-38,000 ppbv/puff. Parametric analyzes performed in this study show the importance of e-cig brand, type, flavor additives, user puffing pattern (duration and frequency), and voltage on physico-chemical properties of emissions. This observed influence is indicative of the complexity associated with the toxicological screening of emissions from e-cigs and needs to be taken into consideration.

  1. Radical intermediates involved in the bleaching of the carotenoid crocin. Hydroxyl radicals, superoxide anions and hydrated electrons

    International Nuclear Information System (INIS)

    Bors, W.; Saran, M.; Michel, C.

    1982-01-01

    The participation of the primary radicals in the bleaching of aqueous solutions of the carotenoid crocin by ionizing radiation was investigated, employing both X-radiolysis and pulse radiolysis. The pulse-radiolytic data demonstrated a very rapid diffusion-controlled attack by both hydroxyl radicals (radicalsOH) and hydrated electrons (e - sub(aq)), while superoxide anions (O 2 - ) did not react at all. The site of the initial reaction of these radicals was not limited to the polyene chromophore. Slower secondary reactions involving crocin alkyl or peroxy radicals contribute mainly to the overall bleaching, in particular during steady-state irradiation. (author)

  2. Development of a high power electron beam welding gun with replaceable high voltage feed-through insulators

    Energy Technology Data Exchange (ETDEWEB)

    Saha, T.K; Mascarenhas, M.; Kandaswamy, E., E-mail: tanmay@barc.gov.in [Power Beam Equipment Design Section, Bhabha Atomic Research Centre, Mumbai (India)

    2014-07-01

    Ceramic to metal sealed feed-through insulators are commonly used in electron beam welding gun. The above feed-through insulators are susceptible to failure, as the brazing joints in them are not always very strong. Failure in one of these feed-through could render the complete gun unusable. This problem has already been faced in BARC, which led to the development of the electron gun with replaceable feed through insulators. A 24 kW Electron Beam Welding (EBW) gun with indigenous designed replaceable insulators is fabricated in BARC. Emphasis during the design of the gun had been to reduce the use of imported components to zero. This paper describes the design and fabrication of this gun and reports various simulations and tests performed. Beam trajectory of the gun is numerically computed and presented. Weld passes were carried out on stainless steel plates show satisfactory penetrations. (author)

  3. Indirect contributions to electron-impact ionization of Li+ (1 s 2 s S31 ) ions: Role of intermediate double-K -vacancy states

    Science.gov (United States)

    Müller, A.; Borovik, A.; Huber, K.; Schippers, S.; Fursa, D. V.; Bray, I.

    2018-02-01

    Fine details of the cross section for electron-impact ionization of metastable two-electron Li+(1 s 2 s S31) ions are scrutinized by both experiment and theory. Beyond direct knockoff ionization, indirect ionization mechanisms proceeding via formation of intermediate double-K-vacancy (hollow) states either in a Li+ ion or in a neutral lithium atom and subsequent emission of one or two electrons, respectively, can contribute to the net production of Li2 + ions. The partial cross sections for such contributions are less than 4% of the total single-ionization cross section. The characteristic steps, resonances, and interference phenomena in the indirect ionization contribution are measured with an experimental energy spread of less than 0.9 eV and with a statistical relative uncertainty of the order of 1.7%, requiring a level of statistical uncertainty in the total single-ionization cross section of better than 0.05%. The measurements are accompanied by convergent-close-coupling calculations performed on a fine energy grid. Theory and experiment are in remarkable agreement concerning the fine details of the ionization cross section. Comparison with previous R-matrix results is less favorable.

  4. Technological guns which form the profiled electron beans

    International Nuclear Information System (INIS)

    Mel'nik, V.I.

    1998-01-01

    Electron guns with high-voltage glow discharge are developed which form disc - and tubule-like,hollow conic and linear electron beams,as well as devices and systems for control of gun parameter and technological processes in low and intermediate vacuum

  5. Structural, dynamic, electronic, and vibrational properties of flexible, intermediate, and stressed rigid As-Se glasses and liquids from first principles molecular dynamics

    International Nuclear Information System (INIS)

    Bauchy, M.; Kachmar, A.; Micoulaut, M.

    2014-01-01

    The structural, vibrational, electronic, and dynamic properties of amorphous and liquid As x Se 1-x (0.10 intermediate phase in these glassy networks, observed at 0.27

  6. Structural, dynamic, electronic, and vibrational properties of flexible, intermediate, and stressed rigid As-Se glasses and liquids from first principles molecular dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Bauchy, M. [Department of Civil and Environmental Engineering, University of California, Los Angeles, California 90095-1593 (United States); Kachmar, A. [Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France); Qatar Environment and Energy Research Institute, Qatar Foundation, P.O. Box 5825, Doha (Qatar); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-11-21

    The structural, vibrational, electronic, and dynamic properties of amorphous and liquid As{sub x}Se{sub 1-x} (0.10 intermediate phase in these glassy networks, observed at 0.27

  7. Intermediate Fragment

    DEFF Research Database (Denmark)

    Kruse Aagaard, Anders

    2015-01-01

    This text and its connected exhibition are aiming to reflect both on the thoughts, the processes and the outcome of the design and production of the artefact ‘Intermediate Fragment’ and making as a contemporary architectural tool in general. Intermediate Fragment was made for the exhibition ‘Enga...... of realising an exhibition object was conceived, but expanded, refined and concretised through this process. The context of the work shown here is an interest in a tighter, deeper connection between experimentally obtained material knowledge and architectural design....

  8. Photoproduction of One-Electron Reducing Intermediates by Chromophoric Dissolved Organic Matter (CDOM): Relation to O2- and H2O2 Photoproduction and CDOM Photooxidation.

    Science.gov (United States)

    Zhang, Yi; Blough, Neil V

    2016-10-06

    A molecular probe, 3-amino-2,2,5,5,-tetramethy-1-pyrrolydinyloxy (3ap), was employed to determine the formation rates of one-electron reducing intermediates generated photochemically from both untreated and borohydride-reduced Suwanee River fulvic and humic acids (SRFA and SRHA, respectively). This stable nitroxyl radical reacts rapidly with reducing radicals and other one-electron reductants to produce a relatively stable product, the hydroxylamine, which can be derivatized with fluorescamine, separated by HPLC and quantified fluorimetrically. We provide evidence that O 2 and 3ap compete for the same pool(s) of photoproduced reducing intermediates, and that under appropriate experimental conditions, the initial rate of hydroxylamine formation (R H ) can provide an estimate of the initial rate of superoxide (O 2 - ) formation. However, comparison of the initial rates of H 2 O 2 formation (R H2O2 ) to that of R H show far larger ratios of R H /R H2O2 (∼6-13) than be accounted for by simple O 2 - dismutation (R H /R H2O2 = 2), implying a significant oxidative sink of O 2 - (∼67-85%). Because of their high reactivity with O 2 - and their likely importance in the photochemistry of CDOM, we suggest that coproduced phenoxy radicals could represent a viable oxidative sink. Because O 2 - /phenoxy radical reactions can lead to more highly oxidized products, O 2 - could be playing a far more significant role in the photooxidation of CDOM than has been previously recognized.

  9. Multiple resolution chirp reflectometry for fault localization and diagnosis in a high voltage cable in automotive electronics

    Science.gov (United States)

    Chang, Seung Jin; Lee, Chun Ku; Shin, Yong-June; Park, Jin Bae

    2016-12-01

    A multiple chirp reflectometry system with a fault estimation process is proposed to obtain multiple resolution and to measure the degree of fault in a target cable. A multiple resolution algorithm has the ability to localize faults, regardless of fault location. The time delay information, which is derived from the normalized cross-correlation between the incident signal and bandpass filtered reflected signals, is converted to a fault location and cable length. The in-phase and quadrature components are obtained by lowpass filtering of the mixed signal of the incident signal and the reflected signal. Based on in-phase and quadrature components, the reflection coefficient is estimated by the proposed fault estimation process including the mixing and filtering procedure. Also, the measurement uncertainty for this experiment is analyzed according to the Guide to the Expression of Uncertainty in Measurement. To verify the performance of the proposed method, we conduct comparative experiments to detect and measure faults under different conditions. Considering the installation environment of the high voltage cable used in an actual vehicle, target cable length and fault position are designed. To simulate the degree of fault, the variety of termination impedance (10 Ω , 30 Ω , 50 Ω , and 1 \\text{k} Ω ) are used and estimated by the proposed method in this experiment. The proposed method demonstrates advantages in that it has multiple resolution to overcome the blind spot problem, and can assess the state of the fault.

  10. Inclusion of electron correlation for the target wave function in low- to intermediate-energy e-N2 scattering

    Science.gov (United States)

    Weatherford, C. A.; Brown, F. B.; Temkin, A.

    1987-01-01

    In a recent calculation, an exact exchange method was developed for use in the partial-differential-equation approach to electron-molecule scattering and was applied to e-N2 scattering in the fixed-nuclei approximation with an adiabatic polarization potential at low energies (0-10 eV). Integrated elastic cross sections were calculated and found to be lower than experiment at energies both below and above the Pi(g) resonance. It was speculated at that time that improved experimental agreement could be obtained if a correlated target representation were used in place of the uncorrelated one. The present paper implements this suggestion and demonstrates the improved agreement. These calculations are also extended to higher energies (0-30 eV) so asd to include the Sigma(u) resonance. Some discrepancies among the experiments and between experiment and the various calculations at very low energy are noted.

  11. In situ direct observation of photocorrosion in ZnO crystals in ionic liquid using a laser-equipped high-voltage electron microscope

    Directory of Open Access Journals (Sweden)

    J. Ishioka

    2017-03-01

    Full Text Available ZnO photocatalysts in water react with environmental water molecules and corrode under illumination. ZnO nanorods in water can also grow because of water splitting induced by UV irradiation. To investigate their morphological behavior caused by crystal growth and corrosion, here we developed a new laser-equipped high-voltage electron microscope and observed crystal ZnO nanorods immersed in ionic liquid. Exposing the specimen holder to a laser with a wavelength of 325 nm, we observed the photocorrosion in situ at the atomic scale for the first time. This experiment revealed that Zn and O atoms near the interface between the ZnO nanorods and the ionic liquid tended to dissolve into the liquid. The polarity and facet of the nanorods were strongly related to photocorrosion and crystal growth.

  12. Electroperturbation of human stratum corneum fine structure by high voltage pulses: a freeze-fracture electron microscopy and differential thermal analysis study.

    Science.gov (United States)

    Jadoul, A; Tanojo, H; Préat, V; Bouwstra, J A; Spies, F; Boddé, H E

    1998-08-01

    Application of high voltage pulses (HVP) to the skin has been shown to promote the transdermal drug delivery by a mechanism involving skin electroporation. The aim of this study was to detect potential changes in lipid phase and ultrastructure induced in human stratum corneum by various HVP protocols, using differential thermal analysis and freeze-fracture electron microscopy. Due to the time involved between the moment the electric field is switched off and the analysis, only "secondary" phenomena rather than primary events could be observed. A decrease in enthalpies for the phase transitions observed at 70 degrees C and 85 degrees C was detected by differential thermal analysis after HVP treatment. No changes in transition temperature could be seen. The freeze-fracture electron microscopy study revealed a dramatic perturbation of the lamellar ordering of the intercellular lipid after application of HVP. Most of the planes displayed rough surfaces. The lipid lamellae exhibited rounded off steps or a vanished stepwise order. There was no evidence for perturbation of the corneocytes content. In conclusion, the freeze-fracture electron microscopy and differential thermal analysis studies suggest that HVP application induces a general perturbation of the stratum corneum lipid ultrastructure.

  13. Direct observation of gliding dislocations interactions with defects in irradiated niobium single crystals by means of the high voltage electronic microscopy (HVEM)

    International Nuclear Information System (INIS)

    Otero, M.P.

    1985-01-01

    The interactions of gliding dislocations with defects in irradiated niobium that result in the formation of dislocations channels. The effects in the mechanical behaviour of [941]- and [441]- oriented Nb single crystals due to oxygen addition, neutron and electron irradiation was observed either by macroscopic deformation in a Instron machine or 'in-situ' deformation in the HVEM-High Voltage Electron Microscope. Some specimens were irradiated at IPNS-Intense Pulsed Neutron Source, at 325 K, with 5 x 10 17 n/cm 2 , others were irradiated with electrons in the HVEM. The interactions between gliding dislocations with clusters point defects and dislocations were observed. The primary mechanism for removal of the clusters by the gliding dislocations was the 'sweeping' of the clusters along with the gliding dislocations. As to the point defects, they were 'swept' by the gliding dislocations and left as aligned loops close to the intersections of the gliding dislocations with the upper and lower specimen surfaces. For the illustration of this phenomena, a schematic drawing was made. The mechanism of 'bowing-out' interaction of dislocations with defect clusters was also observed. The reported anomalous slip observed to operate in the [941]- oriented Nb was also directly observed and a qualitive explanation along with a schematic drawing was proposed. This would explain the softenig observed after the yield stress in the [941]- oriented Nb deformed in the Instron machine. (Author) [pt

  14. Experiments investigating the effects of the accelerating gap voltage pulse on the ion focused (IFR) high current electron recirculators

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.; Wagner, J.S.; Bennett, L.F.; Olson, W.R.; Turman, B.N.; Prestwich, K.R.; Wells, J.

    1991-01-01

    The lifetime of the Ion Focusing Regime (IFR) channel following the pulsing of the post-accelerating gaps is critical for an open-ended, spiral recirculating electron linear accelerator. It dictates the number of allowable beam recirculations through the gap. In the case of a racetrack configuration, it is significant but not as critical, since the presence of the electron beam focuses the ions and lengthens the lifetime of the ion channel. It was established that pulsing the accelerating gap perturbs the IFR channel. However, for the parameters studied, the lifetime is long enough to allow at least four beam recirculations in a spiral device. In addition, cusp fields positioned upstream and downstream from the gap prevent it from perturbing the IFR channel. 4 refs., 5 figs., 1 tab

  15. Experiments investigating the effects of the accelerating gap voltage pulse on the ion focused (IFR) high current electron recirculators

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.; Wagner, J.S.; Bennett, L.F.; Olson, W.R. Turnman, B.N.; Prestwich, K.R.; Wells, J.

    1991-01-01

    The lifetime of the Ion Focusing Regime (IFR) channel following the pulsing of the post-accelerating gaps is critical for an open-ended, spiral recirculating electron linear accelerator. It dictates the number of allowable beam recirculations through the gap. In the case of a racetrack configuration, its is significant but not as critical, since the presence of the electron beam focuses the ions and lengthens the lifetime of the ion channel. It was established that pulsing the accelerating gap perturbs the IFR channel. However, for the parameters studied, the lifetime is long enough to allow at least four beam recirculations in a spiral device. In addition, cusp fields positioned upstream and downstream from the gap prevent it from perturbing the IFR channel

  16. Study of nanometric thin pyrolytic carbon films for explosive electron emission cathode in high-voltage planar diode

    Energy Technology Data Exchange (ETDEWEB)

    Baryshevsky, Vladimir; Belous, Nikolai; Gurinovich, Alexandra; Gurnevich, Evgeny [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); Kuzhir, Polina, E-mail: polina.kuzhir@gmail.com [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); National Research Tomsk State University, 36 Lenin Prospekt, Tomsk 634050 (Russian Federation); Maksimenko, Sergey [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); National Research Tomsk State University, 36 Lenin Prospekt, Tomsk 634050 (Russian Federation); Molchanov, Pavel; Shuba, Mikhail [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); Roddatis, Vladimir [CIC energiGUNE, Albert Einstein 48, 01510 Minano, Alava (Spain); Institut für Materialphysik of Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Kaplas, Tommi; Svirko, Yuri [Institute of Photonics, University of Eastern Finland, P.O. Box 111, Joensuu FI-80101 (Finland)

    2015-04-30

    We report on an experimental study of explosive electron emission properties of cathode made by nanometric thin pyrolytic carbon (PyC) films (2–150 nm) deposited on Cu substrate via methane-based chemical vapor deposition. High current density at level of 300 A/cm{sup 2} in 5 · 10{sup −5} Pa vacuum has been observed together with very stable explosive emission from the planar cathode. The Raman spectroscopy investigation proves that the PyC films remain the same after seven shots. According to the optical image analysis of the cathode before and after one and seven shots, we conclude that the most unusual and interesting feature of using the PyC films/Cu cathode for explosive emission is that the PyC layer on the top of the copper target prevents its evaporation and oxidation, which leads to higher emission stability compared to conventional graphitic/Cu cathodes, and therefore results in longer working life. - Highlights: • Explosive electron emission from pyrolytic carbon (PyC) cathode is reported. • We observe high current density, 300 A/cm{sup 2}, and stable emission parameters. • PyC integrity ensures a high application potential for high current electronics.

  17. Hydride, hydrogen, proton, and electron affinities of imines and their reaction intermediates in acetonitrile and construction of thermodynamic characteristic graphs (TCGs) of imines as a "molecule ID card".

    Science.gov (United States)

    Zhu, Xiao-Qing; Liu, Qiao-Yun; Chen, Qiang; Mei, Lian-Rui

    2010-02-05

    A series of 61 imines with various typical structures were synthesized, and the thermodynamic affinities (defined as enthalpy changes or redox potentials in this work) of the imines to abstract hydride anions, hydrogen atoms, and electrons, the thermodynamic affinities of the radical anions of the imines to abstract hydrogen atoms and protons, and the thermodynamic affinities of the hydrogen adducts of the imines to abstract electrons in acetonitrile were determined by using titration calorimetry and electrochemical methods. The pure heterolytic and homolytic dissociation energies of the C=N pi-bond in the imines were estimated. The polarity of the C=N double bond in the imines was examined using a linear free-energy relationship. The idea of a thermodynamic characteristic graph (TCG) of imines as an efficient "Molecule ID Card" was introduced. The TCG can be used to quantitatively diagnose and predict the characteristic chemical properties of imines and their various reaction intermediates as well as the reduction mechanism of the imines. The information disclosed in this work could not only supply a gap of thermodynamics for the chemistry of imines but also strongly promote the fast development of the applications of imines.

  18. Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 310, - (2007), s. 1883-1888 ISSN 0304-8853 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

  19. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  20. Enhanced Electron Affinity and Exciton Confinement in Exciplex-Type Host: Power Efficient Solution-Processed Blue Phosphorescent OLEDs with Low Turn-on Voltage.

    Science.gov (United States)

    Ban, Xinxin; Sun, Kaiyong; Sun, Yueming; Huang, Bin; Jiang, Wei

    2016-01-27

    A benzimidazole/phosphine oxide hybrid 1,3,5-tris(1-(4-(diphenylphosphoryl)phenyl)-1H-benzo[d]imidazol-2-yl)benzene (TPOB) was newly designed and synthesized as the electron-transporting component to form an exciplex-type host with the conventional hole-transporting material tris(4-carbazoyl-9-ylphenyl)amine (TCTA). Because of the enhanced triplet energy and electron affinity of TPOB, the energy leakage from exciplex-state to the constituting molecule was eliminated. Using energy transfer from exciplex-state, solution-processed blue phosphorescent organic light-emitting diodes (PHOLEDs) achieved an extremely low turn-on voltage of 2.8 V and impressively high power efficiency of 22 lm W(-1). In addition, the efficiency roll-off was very small even at luminance up to 10 000 cd m(-2), which suggested the balanced charge transfer in the emission layer. This study demonstrated that molecular modulation was an effective way to develop efficient exciplex-type host for high performanced PHOLEDs.

  1. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  2. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  3. Intermediate uveitis

    Directory of Open Access Journals (Sweden)

    Babu B

    2010-01-01

    Full Text Available Intermediate uveitis (IU is described as inflammation in the anterior vitreous, ciliary body and the peripheral retina. In the Standardization of Uveitis Nomenclature (SUN working group′s international workshop for reporting clinical data the consensus reached was that the term IU should be used for that subset of uveitis where the vitreous is the major site of the inflammation and if there is an associated infection (for example, Lyme disease or systemic disease (for example, sarcoidosis. The diagnostic term pars planitis should be used only for that subset of IU where there is snow bank or snowball formation occurring in the absence of an associated infection or systemic disease (that is, "idiopathic". This article discusses the clinical features, etiology, pathogenesis, investigations and treatment of IU.

  4. Degradation of thin poly(lactic acid) films: Characterization by capacitance–voltage, atomic force microscopy, scanning electron microscopy and contact-angle measurements

    International Nuclear Information System (INIS)

    Schusser, S.; Menzel, S.; Bäcker, M.; Leinhos, M.; Poghossian, A.; Wagner, P.; Schöning, M.J.

    2013-01-01

    For the development of new biopolymers and implantable biomedical devices with predicted biodegradability, simple, non-destructive, fast and inexpensive techniques capable for real-time in situ testing of the degradation kinetics of polymers are highly appreciated. In this work, a capacitive field-effect electrolyte–insulator–semiconductor (EIS) sensor has been applied for real-time in situ monitoring of degradation of thin poly(D,L-lactic acid) (PDLLA) films over a long-time period of one month. Generally, the polymer-modified EIS (PMEIS) sensor is capable of detecting any changes in the bulk, surface and interface properties of the polymer (e.g., thickness, coverage, dielectric constant, surface potential) induced by degradation processes. The time-dependent capacitance–voltage (C–V) characteristics of PMEIS structures were used as an indicator of the polymer degradation. To accelerate the PDLLA degradation, experiments were performed in alkaline buffer solution of pH 10.6. The results of these degradation measurements with the EIS sensor were verified by the detection of lactic acid (product of the PDLLA degradation) in the degradation medium. In addition, the micro-structural and morphological changes of the polymer surface induced by the polymer degradation have been systematically studied by means of scanning-electron microscopy, atomic-force microscopy, optical microscopy, and contact-angle measurements

  5. Studies on reconstruction of the carotid artery in the neck using arterial vessels irradiated by a large amount of high voltage electron beam

    International Nuclear Information System (INIS)

    Matsumura, Hiroshi

    1978-01-01

    High voltage electron beam of 2,000,000 rad was irradiated to the common carotid arteries excised from dogs. After keeping them in a frozen state, they were replaced with the common carotid arteries of other adult dogs. The border of the artery transplanted could not be identified from the x-ray films 7 - 36 months after transplantation. There was no stenosis or dilation in the artery on either x-ray films or in histopathological examinations. There was no tissue reaction in the homologous transplantation, but all the cells died and the nuclei of muscular fibers of the tunica media disappeared. However, the internal elastica and other elastic fibers were unchanged. Cells proliferated from the original artery to form a false inner coat. Noradrenergic nerves and the vasa vasorum did not enter the graft. Thus, the arteries transplanted were only substitutive vessels. A rabbit abdominal aorta which was transplanted to a dog common carotid artery, showed sacculated dilation or obstruction. In the case of obstruction, severe tissue reaction was recognized. In the case of sacculated dilation, thinning of the arterial wall at the dilated part and fragmentation of the elastic fibers of the tunica media were observed, and other tissues also tended to be destructed and absorbed. (Ichikawa, K.)

  6. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  7. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

    2013-01-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

  8. Study of nonlinear interaction between bunched beam and intermediate cavities in a relativistic klystron amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Y. [Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Xu, Z.; Li, Z. H. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Tang, C. X. [Department of Engineering Physics, Tsinghua University, Beijing 100084 (China)

    2012-07-15

    In intermediate cavities of a relativistic klystron amplifier (RKA) driven by intense relativistic electron beam, the equivalent circuit model, which is widely adopted to investigate the interaction between bunched beam and the intermediate cavity in a conventional klystron design, is invalid due to the high gap voltage and the nonlinear beam loading in a RKA. According to Maxwell equations and Lorentz equation, the self-consistent equations for beam-wave interaction in the intermediate cavity are introduced to study the nonlinear interaction between bunched beam and the intermediate cavity in a RKA. Based on the equations, the effects of modulation depth and modulation frequency of the beam on the gap voltage amplitude and its phase are obtained. It is shown that the gap voltage is significantly lower than that estimated by the equivalent circuit model when the beam modulation is high. And the bandwidth becomes wider as the beam modulation depth increases. An S-band high gain relativistic klystron amplifier is designed based on the result. And the corresponding experiment is carried out on the linear transformer driver accelerator. The peak output power has achieved 1.2 GW with an efficiency of 28.6% and a gain of 46 dB in the corresponding experiment.

  9. Study of nonlinear interaction between bunched beam and intermediate cavities in a relativistic klystron amplifier

    Science.gov (United States)

    Wu, Y.; Xu, Z.; Li, Z. H.; Tang, C. X.

    2012-07-01

    In intermediate cavities of a relativistic klystron amplifier (RKA) driven by intense relativistic electron beam, the equivalent circuit model, which is widely adopted to investigate the interaction between bunched beam and the intermediate cavity in a conventional klystron design, is invalid due to the high gap voltage and the nonlinear beam loading in a RKA. According to Maxwell equations and Lorentz equation, the self-consistent equations for beam-wave interaction in the intermediate cavity are introduced to study the nonlinear interaction between bunched beam and the intermediate cavity in a RKA. Based on the equations, the effects of modulation depth and modulation frequency of the beam on the gap voltage amplitude and its phase are obtained. It is shown that the gap voltage is significantly lower than that estimated by the equivalent circuit model when the beam modulation is high. And the bandwidth becomes wider as the beam modulation depth increases. An S-band high gain relativistic klystron amplifier is designed based on the result. And the corresponding experiment is carried out on the linear transformer driver accelerator. The peak output power has achieved 1.2 GW with an efficiency of 28.6% and a gain of 46 dB in the corresponding experiment.

  10. Determination of the threshold-energy surface for copper using in-situ electrical-resistivity measurements in the high-voltage electron microscope

    International Nuclear Information System (INIS)

    King, W.E.; Merkle, K.L.; Meshii, M.

    1981-01-01

    A detailed study of the anisotropy of the threshold energy for Frenkel-pair production in copper was carried out experimentally, using in-situ electrical-resistivity measurements in the high-voltage electron microscope. These electrical-resistivity measurements, which are sensitive to small changes in point-defect concentration, were used to determine the damage or defect production rate. Damage-rate measurements in copper single crystals were carried out for approx.40 incident electron-beam directions and six electron energies from 0.4 to 1.1 MeV. The total cross section for Frenkel-pair production is proportional to the measured damage rate and can be theoretically calculated if the form of the threshold-energy surface is known. Trial threshold-energy surfaces were systematically altered until a ''best fit'' of the calculated to the measured total cross sections for Frenkel-pair production was obtained. The average threshold energy of this surface is 28.5 eV. The minimum threshold energy is 18 +- 2 eV and is located near . A ring of very high threshold energy (>50 eV) surrounds the direction. A damage function for single-defect production was derived from this surface and was applied to defect-production calculations at higher recoil energies. This function rises rather sharply from a value of zero at 17 eV to 0.8 at 42 eV. It has the value of 0.5 at 24.5 eV. Above 30 eV the slope of the curve begins to decrease, reflecting the presence of the high-energy regions of the threshold-energy surface. Both topographical and quantitative comparisons of the present surface with those in the literature were presented. Based on a chi 2 goodness-of-fit test, the present surface was found to predict the experimentally observed total cross sections for Frenkel-pair production significantly better than the other available surfaces. Also, the goodness of fit varied substantially less with energy and direction for the present surface

  11. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  12. Spectrum analysis of a voltage source converter due to semiconductor voltage drops

    DEFF Research Database (Denmark)

    Rasmussen, Tonny Wederberg; Eltouki, Mustafa

    2017-01-01

    It is known that power electronic voltage source converters are non-ideal. This paper presents a state-of-the-art review on the effect of semiconductor voltage drop on the output voltage spectrum, using single-phase H-bridge two-level converter topology with natural sampled pulse width modulation....... The paper describes the analysis of output voltage spectrum, when the semiconductor voltage drop is added. The results of the analysis of the spectral contribution including and excluding semiconductor voltage drop reveal a good agreement between the theoretical results, simulations and laboratory...

  13. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  14. Design and Control of a Dynamic Voltage Restorer

    DEFF Research Database (Denmark)

    Nielsen, John Godsk

    voltage until the energy storage is completely drained or the voltages have returned to normal voltage levels. The control of the HV-DVR is a combined feedforward and feedback control to have a fast response time and load independent voltages. The control is implemented in a rotating dq-reference frame...... electric consumers against voltage dips and surges in the medium and low voltage distribution grid. The thesis first gives an introduction to relevant power quality issues for a DVR and power electronic controllers for voltage dip mitigation. Thereafter the operation and the elements in a DVR are described...... of symmetrical and non-symmetrical voltage dips. In most cases the DVR is capable of restoring the load voltages within 2 ms. During the transition phases load voltage oscillations can be generated and during the return of the supply voltages short time over-voltages can be generated by the DVR. Both...

  15. Direct, coherent and incoherent intermediate state tunneling and scanning tunnel microscopy (STM)

    International Nuclear Information System (INIS)

    Halbritter, J.

    1997-01-01

    Theory and experiment in tunneling are still qualitative in nature, which hold true also for the latest developments in direct-, resonant-, coherent- and incoherent-tunneling. Those tunnel processes have recently branched out of the field of ''solid state tunnel junctions'' into the fields of scanning tunnel microscopy (STM), single electron tunneling (SET) and semiconducting resonant tunnel structures (RTS). All these fields have promoted the understanding of tunneling in different ways reaching from the effect of coherence, of incoherence and of charging in tunneling, to spin flip or inelastic effects. STM allows not only the accurate measurements of the tunnel current and its voltage dependence but, more importantly, the easy quantification via the (quantum) tunnel channel conductance and the distance dependence. This new degree of freedom entering exponentially the tunnel current allows an unique identification of individual tunnel channels and their quantification. In STM measurements large tunnel currents are observed for large distances d > 1 nm explainable by intermediate state tunneling. Direct tunneling with its reduced tunnel time and reduced off-site Coulomb charging bridges distances below 1 nm, only. The effective charge transfer process with its larger off-site and on-site charging at intermediate states dominates tunnel transfer in STM, biology and chemistry over distances in the nm-range. Intermediates state tunneling becomes variable range hopping conduction for distances larger than d > 2 nm, for larger densities of intermediate states n 1 (ε) and for larger temperatures T or voltages U, still allowing high resolution imaging

  16. Electron–Cyclotron Laser Using Free-Electron Two-Quantum Stark Radiation in a Strong Uniform Axial Magnetic Field and an Alternating Axial Electric Field in a Voltage-Supplied Pill-Box Cavity

    International Nuclear Information System (INIS)

    Kim, S. H.

    2016-01-01

    We consider the radiation from the beam electrons traveling in a strong uniform axial magnetic field and an axial alternating electric field of wavelength λ_w generated by a voltage-supplied pill-box cavity. The beam electrons emit genuine laser radiation that propagates only in the axial direction through free-electron two-quantum Stark radiation. We find that laser radiation takes place only at the expense of the axial kinetic energy when λ_w ≪ c/(ω_c/γ), where ω_c/γ is the relativistic electron–cyclotron frequency. We formulate the laser power based on quantum-wiggler electrodynamics, and envision a laser of length 10 m with estimated power 0.1 GW/(kA) in the 10"−"4 cm wavelength range. (paper)

  17. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    International Nuclear Information System (INIS)

    Prevosto, L.; Mancinelli, B.; Kelly, H.

    2013-01-01

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core

  18. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    Energy Technology Data Exchange (ETDEWEB)

    Prevosto, L.; Mancinelli, B. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Kelly, H. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Instituto de Física del Plasma (CONICET), Departamento de Física, Facultad de Ciencias Exactas y Naturales (UBA) Ciudad Universitaria Pab. I, 1428 Buenos Aires (Argentina)

    2013-12-15

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  19. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe.

    Science.gov (United States)

    Prevosto, L; Kelly, H; Mancinelli, B

    2013-12-01

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  20. Macroeconomic Assessment of Voltage Sags

    Directory of Open Access Journals (Sweden)

    Sinan Küfeoğlu

    2016-12-01

    Full Text Available The electric power sector has changed dramatically since the 1980s. Electricity customers are now demanding uninterrupted and high quality service from both utilities and authorities. By becoming more and more dependent on the voltage sensitive electronic equipment, the industry sector is the one which is affected the most by voltage disturbances. Voltage sags are one of the most crucial problems for these customers. The utilities, on the other hand, conduct cost-benefit analyses before going through new investment projects. At this point, understanding the costs of voltage sags become imperative for planning purposes. The characteristics of electric power consumption and hence the susceptibility against voltage sags differ considerably among different industry subsectors. Therefore, a model that will address the estimation of worth of electric power reliability for a large number of customer groups is necessary. This paper introduces a macroeconomic model to calculate Customer Voltage Sag Costs (CVSCs for the industry sector customers. The proposed model makes use of analytical data such as value added, annual energy consumption, working hours, and average outage durations and provides a straightforward, credible, and easy to follow methodology for the estimation of CVSCs.

  1. A matter of quantum voltages

    Energy Technology Data Exchange (ETDEWEB)

    Sellner, Bernhard; Kathmann, Shawn M., E-mail: Shawn.Kathmann@pnnl.gov [Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V{sub o}) – the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V{sub o} from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V{sub o} for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V{sub o} as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  2. The recombination correction and the dependence of the response of plane parallel chambers on the polarizing voltage in pulsed electron and photon beams

    International Nuclear Information System (INIS)

    Roos, M.; Derikum, K.

    2000-01-01

    Based on an experimental investigation of the recombination effect in plane parallel chambers, a relation is deduced that allows the correction to be calculated from the electrode spacing and from the dose per pulse. It is shown that the uncertainties caused by the application of the Boag formula for volume recombination (recommended in the International Code of Practice TRS-381) amount to not more than about 0.1% for conventional beams. Calculated recombinations are compared with experimental results concerning the dependence of the response of various commercial plane parallel chambers on the polarizing voltage. Since it cannot be excluded that particular chambers collect a non-negligible amount of charge from regions outside the designated collecting volume or that the effective polarizing voltage is reduced by poor contacts, it seems advisable to experimentally check the chambers before use and before application of the analytical relations. (author)

  3. A Voltage Gain-Controlled Modified CFOA And Its Application in Electronically Tunable Four-Mode All-Pass Filter Design

    Directory of Open Access Journals (Sweden)

    Norbert Herencsar

    2012-07-01

    Full Text Available This paper presents a new active building block (ABB called voltage gain-controlled modified current feedback amplifier (VGC-MCFOA based on bipolar junction transistor technology. The versatility of the new ABB is demonstrated in new first-order all-pass filter structure design employing single VGC-MCFOA, single grounded capacitor, and three resistors. Introduced circuit provides all four possible transfer functions at the same configuration, namely current-mode, transimpedance-mode, transadmittance-mode, and voltage-mode. The pole frequency of the circuit can be easily tuned by means of DC bias currents. The theoretical results are verified by SPICE simulations based on bipolar transistor arrays AT&T ALA400-CBIC-R process parameters.

  4. A Voltage Gain-Controlled Modified CFOA And Its Application in Electronically Tunable Four-Mode All-Pass Filter Design

    OpenAIRE

    Norbert Herencsar; Jaroslav Koton; Abhirup Lahiri; Bilgin Metin; Kamil Vrba

    2012-01-01

    This paper presents a new active building block (ABB) called voltage gain-controlled modified current feedback amplifier (VGC-MCFOA) based on bipolar junction transistor technology. The versatility of the new ABB is demonstrated in new first-order all-pass filter structure design employing single VGC-MCFOA, single grounded capacitor, and three resistors. Introduced circuit provides all four possible transfer functions at the same configuration, namely current-mode, transimpedance-mode, transa...

  5. High-voltage engineering and testing

    CERN Document Server

    Ryan, Hugh M

    2013-01-01

    This 3rd edition of High Voltage Engineering Testing describes strategic developments in the field and reflects on how they can best be managed. All the key components of high voltage and distribution systems are covered including electric power networks, UHV and HV. Distribution systems including HVDC and power electronic systems are also considered.

  6. Quantum corrections to conductivity observed at intermediate magnetic fields in a high mobility GaAs/AlGaAs 2-dimensional electron gas

    International Nuclear Information System (INIS)

    Taboryski, R.; Veje, E.; Lindelof, P.E.

    1990-01-01

    Magnetoresistance with the field perpendicular to the 2-dimensional electron gas in a high mobility GaAs/AlGaAs heterostructure at low temperatures is studied. At the lowest magnetic field we observe the weak localization. At magnetic fields, where the product of the mobility and the magnetic field is of the order of unity, the quantum correction to conductivity due to the electron-electron interaction is as a source of magnetoresistance. A consistent analysis of experiments in this regime is for the first time performed. In addition to the well known electron-electron term with the expected temperature dependence, we find a new type of temperature independent quantum correction, which varies logarithmically with mobility. (orig.)

  7. Enhanced emission of encaged-OH--free Ca12(1-x)Sr12xAl14O33:0.1%Gd3+ conductive phosphors via tuning the encaged-electron concentration for low-voltage FEDs.

    Science.gov (United States)

    Zhang, Meng; Liu, Yuxue; Yang, Jian; Zhu, Hancheng; Yan, Duanting; Zhang, Xinyang; Liu, Chunguang; Xu, Changshan; Zhang, Hong

    2017-05-24

    Encaged-OH - -free Ca 12(1-x) Sr 12x Al 14 O 33 :0.1%Gd 3+ conductive phosphors were prepared through a melt-solidification process in combination with a subsequent heat treatment. Absorption spectra showed that the maximum encaged-electron concentration was increased to 1.08 × 10 21 cm -3 through optimizing the doping amount of Sr 2+ (x = 0.005). Meanwhile, FTIR and Raman spectra indicated that pure Ca 11.94 Sr 0.06 Al 14 O 33 :0.1%Gd 3+ conductive phosphor without encaged OH - and C 2 2- anions was acquired. For the conductive powders heat-treated in air for different times, the encaged-electron concentrations were tuned from 1.02 × 10 21 to 8.3 × 10 20 cm -3 . ESR, photoluminescence, and luminescence kinetics analyses indicated that the emission at 312 nm mainly originated from Gd 3+ ions surrounded by encaged O 2- anions, while Gd 3+ ions surrounded by encaged electrons had a negative contribution to the UV emission due to the existence of an energy transfer process. Under low-voltage electron-beam excitation (3 kV), enhanced cathodoluminescence (CL) of the conductive phosphors could be achieved by tuning the encaged-electron concentrations. In particular, for the encaged-OH - -free conductive phosphor, the emission intensity of the CL was about one order of magnitude higher than that of the conductive phosphor containing encaged OH - anions. Our results suggested that the encaged-OH - -free conductive phosphors have potential application in low-voltage FEDs.

  8. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

    OpenAIRE

    Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

    2016-01-01

    InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

  9. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  10. Direct observation and analysis of york-shell materials using low-voltage high-resolution scanning electron microscopy: Nanometal-particles encapsulated in metal-oxide, carbon, and polymer

    Directory of Open Access Journals (Sweden)

    Shunsuke Asahina

    2014-11-01

    Full Text Available Nanometal particles show characteristic features in chemical and physical properties depending on their sizes and shapes. For keeping and further enhancing their features, the particles should be protected from coalescence or degradation. One approach is to encapsulate the nanometal particles inside pores with chemically inert or functional materials, such as carbon, polymer, and metal oxides, which contain mesopores to allow permeation of only chemicals not the nanometal particles. Recently developed low-voltage high-resolution scanning electron microscopy was applied to the study of structural, chemical, and electron state of both nanometal particles and encapsulating materials in york-shell materials of Au@C, Ru/Pt@C, Au@TiO2, and Pt@Polymer. Progresses in the following categories were shown for the york-shell materials: (i resolution of topographic image contrast by secondary electrons, of atomic-number contrast by back-scattered electrons, and of elemental mapping by X-ray energy dispersive spectroscopy; (ii sample preparation for observing internal structures; and (iii X-ray spectroscopy such as soft X-ray emission spectroscopy. Transmission electron microscopy was also used for characterization of Au@C.

  11. Direct observation and analysis of yolk-shell materials using low-voltage high-resolution scanning electron microscopy: Nanometal-particles encapsulated in metal-oxide, carbon, and polymer

    Energy Technology Data Exchange (ETDEWEB)

    Asahina, Shunsuke; Suga, Mitsuo; Takahashi, Hideyuki [JEOL Ltd., SM Business Unit, Tokyo (Japan); Young Jeong, Hu [Graduate School of EEWS, WCU/BK21+, KAIST, Daejeon 305-701 (Korea, Republic of); Galeano, Carolina; Schüth, Ferdi [Department of Heterogeneous Catalysis, Max-Planck-Institut für Kohlenforschung, Mülheim (Germany); Terasaki, Osamu, E-mail: terasaki@mmk.su.se, E-mail: terasaki@kaist.ac.kr [Graduate School of EEWS, WCU/BK21+, KAIST, Daejeon 305-701 (Korea, Republic of); Department of Materials and Environmental Chemistry, Berzelii Centre EXSELENT on Porous Materials, Stockholm University, SE-10691 Stockholm (Sweden)

    2014-11-01

    Nanometal particles show characteristic features in chemical and physical properties depending on their sizes and shapes. For keeping and further enhancing their features, the particles should be protected from coalescence or degradation. One approach is to encapsulate the nanometal particles inside pores with chemically inert or functional materials, such as carbon, polymer, and metal oxides, which contain mesopores to allow permeation of only chemicals not the nanometal particles. Recently developed low-voltage high-resolution scanning electron microscopy was applied to the study of structural, chemical, and electron state of both nanometal particles and encapsulating materials in yolk-shell materials of Au@C, Ru/Pt@C, Au@TiO{sub 2}, and Pt@Polymer. Progresses in the following categories were shown for the yolk-shell materials: (i) resolution of topographic image contrast by secondary electrons, of atomic-number contrast by back-scattered electrons, and of elemental mapping by X-ray energy dispersive spectroscopy; (ii) sample preparation for observing internal structures; and (iii) X-ray spectroscopy such as soft X-ray emission spectroscopy. Transmission electron microscopy was also used for characterization of Au@C.

  12. Rational Design of High-Performance Wide-Bandgap (≈2 eV) Polymer Semiconductors as Electron Donors in Organic Photovoltaics Exhibiting High Open Circuit Voltages (≈1 V).

    Science.gov (United States)

    Chochos, Christos L; Katsouras, Athanasios; Gasparini, Nicola; Koulogiannis, Chrysanthos; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

    2017-01-01

    Systematic optimization of the chemical structure of wide-bandgap (≈2.0 eV) "donor-acceptor" copolymers consisting of indacenodithiophene or indacenodithieno[3,2-b]thiophene as the electron-rich unit and thieno[3,4-c]pyrrole-4,6-dione as the electron-deficient moiety in terms of alkyl side chain engineering and distance of the electron-rich and electron-deficient monomers within the repeat unit of the polymer chain results in high-performance electron donor materials for organic photovoltaics. Specifically, preliminary results demonstrate extremely high open circuit voltages (V oc s) of ≈1.0 V, reasonable short circuit current density (J sc ) of around 11 mA cm -2 , and moderate fill factors resulting in efficiencies close to 6%. All the devices are fabricated in an inverted architecture with the photoactive layer processed by doctor blade equipment, showing the compatibility with roll-to-roll large-scale manufacturing processes. From the correlation of the chemical structure-optoelectronic properties-photovoltaic performance, a rational guide toward further optimization of the chemical structure in this family of copolymers, has been achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Elastic electron differential cross sections for argon atom in the intermediate energy range from 40 eV to 300 eV

    Science.gov (United States)

    Ranković, Miloš Lj.; Maljković, Jelena B.; Tökési, Károly; Marinković, Bratislav P.

    2018-02-01

    Measurements and calculations for electron elastic differential cross sections (DCS) of argon atom in the energy range from 40 to 300 eV are presented. DCS have been measured in the crossed beam arrangement of the electron spectrometer with an energy resolution of 0.5 eV and angular resolution of 1.5∘ in the range of scattering angles from 20∘ to 126∘. Both angular behaviour and energy dependence of DCS are obtained in a separate sets of experiments, while the absolute scale is achieved via relative flow method, using helium as a reference gas. All data is corrected for the energy transmission function, changes of primary electron beam current and target pressure, and effective path length (volume correction). DCSs are calculated in relativistic framework by expressing the Mott's cross sections in partial wave expansion. Our results are compared with other available data.

  14. Electron scattering cross sections for SF6 and SF5CF3 at intermediate and high energies (100-10000 eV)

    International Nuclear Information System (INIS)

    Limao-Vieira, P.; Blanco, F.; Oller, J.C.; Munoz, A.; Perez, J.M.; Vinodkumar, M.; Garcia, G.; Mason, N.J.

    2005-01-01

    A modified experimental apparatus with improved angular resolution and stability has been used to measure the total electron scattering cross sections for SF 6 and SF 5 CF 3 in the energy range of 100-5000 eV. A detailed analysis of the experimental error sources is provided. The experimental results are compared with integral elastic and inelastic cross sections calculated using the independent atom model approximation and a modified single-center additivity rule for electron energies ranging from 1 to 10,000 eV. The accuracy of these approximations method is discussed through a comparison with the experimental results. Previous cross-sectional data for SF 6 are compared with the present theoretical and experimental results. For SF 5 CF 3 , we present the first electron scattering cross-sectional data for the 100-10,000 eV energy range, as well as the first empirical determination of the molecular polarizability

  15. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  16. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  17. Voltage-Dependent Gating: Novel Insights from KCNQ1 Channels

    Science.gov (United States)

    Cui, Jianmin

    2016-01-01

    Gating of voltage-dependent cation channels involves three general molecular processes: voltage sensor activation, sensor-pore coupling, and pore opening. KCNQ1 is a voltage-gated potassium (Kv) channel whose distinctive properties have provided novel insights on fundamental principles of voltage-dependent gating. 1) Similar to other Kv channels, KCNQ1 voltage sensor activation undergoes two resolvable steps; but, unique to KCNQ1, the pore opens at both the intermediate and activated state of voltage sensor activation. The voltage sensor-pore coupling differs in the intermediate-open and the activated-open states, resulting in changes of open pore properties during voltage sensor activation. 2) The voltage sensor-pore coupling and pore opening require the membrane lipid PIP2 and intracellular ATP, respectively, as cofactors, thus voltage-dependent gating is dependent on multiple stimuli, including the binding of intracellular signaling molecules. These mechanisms underlie the extraordinary KCNE1 subunit modification of the KCNQ1 channel and have significant physiological implications. PMID:26745405

  18. Examination of the spatial-response uniformity of a microchannel-plate detector using a pulsed high-voltage electron gun

    International Nuclear Information System (INIS)

    Alumot, D; Kroupp, E; Fisher, A

    2014-01-01

    In this paper we describe an alternative method to examine the spatial-response uniformity of a microchannel-plate (MCP) detector to a ∼ 1 ns pulse of soft x-rays. The examination was performed by illuminating the MCP surface with energetic electrons rather than with x-rays. It is shown that the MCP features similar, yet not identical, response to pulses of soft x-ray photons or energetic electrons, making such examinations much simpler and less expensive. The building of the electron-gun system is relatively easy and inexpensive, and in addition to verifying the spatial uniformity of the response of the MCP to incoming particles and radiation, it can be used to detect damaged areas on the detector. A comparison between the results obtained using the electron-gun with those obtained using a laser-produced-plasma x-ray source, demonstrating the reliability of the method, is presented

  19. Application of x-ray nano-particulate markers for the visualization of intermediate layers and interfaces using scanning electron microscopy

    Science.gov (United States)

    Bessudnova, Nadezda O.; Bilenko, David I.; Zakharevich, Andrey M.

    2012-03-01

    In this study the methodology of biological sample preparation for dental research using SEM/EDX has been elaborated. (1)The original cutting equipment supplied with 3D user-controlled sample fixation and an adjustable cooling system has been designed and evaluated. (2) A new approach to the root dentine drying procedure has been developed to preserve structure peculiarities of root dentine. (3) A novel adhesive system with embedded X-Ray nanoparticulate markers has been designed. (4)The technique allowing for visualization of bonding resins, interfaces and intermediate layers between tooth hard tissues and restorative materials of endodontically treated teeth using the X-ray nano-particulate markers has been developed and approved. These methods and approaches were used to compare the objective depth of penetration of adhesive systems of different generations in root dentine. It has been shown that the depth of penetration in dentine is less for adhesive systems of generation VI in comparison with bonding resins of generation V, which is in agreement with theoretical evidence. The depth of penetration depends on the correlation between the direction of dentinal tubules, bonding resin delivery and gravity.

  20. Loop-voltage tomography in tokamaks using transient synchrotron radiation

    International Nuclear Information System (INIS)

    Fisch, N.J.; Kritz, A.H.; Hunter Coll., New York, NY

    1989-07-01

    The loop voltage in tokamaks is particularly difficult to measure anywhere but at the plasma periphery. A brief, deliberate, perturbation of hot plasma electrons, however, produces a transient radiation response that is sensitive to this voltage. We investigate how such a radiation response can be used to diagnose the loop voltage. 24 refs., 6 figs

  1. Spectral studies of intermediate species formed in one-electron reactions of bovine liver catalase at room and low temperatures. A comparison with peroxidase reactions

    International Nuclear Information System (INIS)

    Metodiewa, D.; Dunford, H.B.

    1992-01-01

    The reactions of native bovine catalase with superoxide and solvated electrons have been investigated using three different methods for generating these reducing substrates: γ-radiolysis of oxygenated or deaerated buffer solutions in the presence of an OH radical scavenger; either xanthine or acetaldehyde with xanthine oxidase; and low-temperature (77 K) γ-radiolysis of buffered ethylene glycol/water solutions with subsequent annealing of samples at 183 K. (Author)

  2. Simulation of forward dark current voltage characteristics of tandem solar cells

    International Nuclear Information System (INIS)

    Rubinelli, F.A.

    2012-01-01

    The transport mechanisms tailoring the shape of dark current–voltage characteristics of amorphous and microcrystalline silicon based tandem solar cell structures are explored with numerical simulations. Our input parameters were calibrated by fitting experimental current voltage curves of single and double junction structures measured under dark and illuminated conditions. At low and intermediate forward voltages the dark current–voltage characteristics show one or two regions with a current–voltage exponential dependence. The diode factor is unique in tandem cells with the same material in both intrinsic layers and two dissimilar diode factors are observed in tandem cells with different materials on the top and bottom intrinsic layers. In the exponential regions the current is controlled by recombination through gap states and by free carrier diffusion. At high forward voltages the current grows more slowly with the applied voltage. The current is influenced by the onset of electron space charge limited current (SCLC) in tandem cells where both intrinsic layers are of amorphous silicon and by series resistance of the bottom cell in tandem cells where both intrinsic layers are of microcrystalline silicon. In the micromorph cell the onset of SCLC becomes visible on the amorphous top sub-cell. The dark current also depends on the thermal generation of electron–hole (e–h) pairs present at the tunneling recombination junction. The highest dependence is observed in the tandem structure where both intrinsic layers are of microcrystalline silicon. The prediction of meaningless dark currents at low forward and reverse voltages by our code is discussed and one solution is given. - Highlights: ► Transport mechanisms shaping the dark current-voltage curves of tandem devices. ► The devices are amorphous and microcrystalline based tandem solar cells. ► Two regions with a current-voltage exponential dependence are observed. ► The tandem J-V diode factor is the

  3. Neutron and photon measurements through concrete from a 15 GeV electron beam on a target-comparison with models and calculations. [Intermediate energy source term, Monte Carlo code

    Energy Technology Data Exchange (ETDEWEB)

    Jenkins, T M [Stanford Linear Accelerator Center, CA (USA)

    1979-02-15

    Measurements of neutron and photon dose equivalents from a 15 GeV electron beam striking an iron target inside a scale model of a PEP IR hall are described, and compared with analytic-empirical calculations and with the Monte Carlo code, MORSE. The MORSE code is able to predict both absolute neutron and photon dose equivalents for geometries where the shield is relatively thin, but fails as the shield thickness is increased. An intermediate energy source term is postulated for analytic-empirical neutron shielding calculations to go along with the giant resonance and high energy terms, and a new source term due to neutron capture is postulated for analytic-empirical photon shielding calculations. The source strengths for each energy source term, and each type, are given from analysis of the measurements.

  4. Electronic Power Transformer Control Strategy in Wind Energy Conversion Systems for Low Voltage Ride-through Capability Enhancement of Directly Driven Wind Turbines with Permanent Magnet Synchronous Generators (D-PMSGs

    Directory of Open Access Journals (Sweden)

    Hui Huang

    2014-11-01

    Full Text Available This paper investigates the use of an Electronic Power Transformer (EPT incorporated with an energy storage system to smooth the wind power fluctuations and enhance the low voltage ride-through (LVRT capability of directly driven wind turbines with permanent magnet synchronous generators (D-PMSGs. The decoupled control schemes of the system, including the grid side converter control scheme, generator side converter control scheme and the control scheme of the energy storage system, are presented in detail. Under normal operating conditions, the energy storage system absorbs the high frequency component of the D-PMSG output power to smooth the wind power fluctuations. Under grid fault conditions, the energy storage system absorbs the redundant power, which could not be transferred to the grid by the EPT, to help the D-PMSG to ride through low voltage conditions. This coordinated control strategy is validated by simulation studies using MATLAB/Simulink. With the proposed control strategy, the output wind power quality is improved and the D-PMSG can ride through severe grid fault conditions.

  5. A NEXAFS and mass spectrometry study of cysteine, cystine and insulin irradiated with intermediate energy (0.8 keV) electrons

    Energy Technology Data Exchange (ETDEWEB)

    Simões, G., E-mail: simoes.grazieli@gmail.com [Instituto de Química, Universidade Federal do Rio de Janeiro, Cidade Universitária, 21941-909 Rio de Janeiro (Brazil); Rodrigues, F.N. [Instituto de Química, Universidade Federal do Rio de Janeiro, Cidade Universitária, 21941-909 Rio de Janeiro (Brazil); Instituto Federal de Educação, Ciência e Tecnologia do Rio de Janeiro, Maracanã, 20270-021 Rio de Janeiro (Brazil); Bernini, R.B. [Instituto de Química, Universidade Federal do Rio de Janeiro, Cidade Universitária, 21941-909 Rio de Janeiro (Brazil); Instituto Federal de Educação, Ciência e Tecnologia do Rio de Janeiro, Duque de Caxias, 25050-100 Rio de Janeiro (Brazil); Castro, C.S.C. [Instituto Nacional de Metrologia, Qualidade e Tecnologia – Inmetro, 25250-020 Rio de Janeiro (Brazil); Souza, G.G.B. de, E-mail: gerson@iq.ufrj.br [Instituto de Química, Universidade Federal do Rio de Janeiro, Cidade Universitária, 21941-909 Rio de Janeiro (Brazil)

    2014-03-01

    Highlights: • Structural modifications in sulfur containing biomolecules were investigated. • Significant modifications were observed in insulin irradiated NEXAFS spectra. • Degradation of insulin can be observed even at low temperature. • Alterations in insulin spectrum were characterized according to the state of sulfur. - Abstract: We have performed a NEXAFS (S 1s) and mass spectrometry study of solid samples of cysteine, cystine and insulin irradiated with 0.8 keV electrons. The measured mass spectra point out to processes of desulfurization, deamination, decarbonylation and decarboxylation in the irradiated biomolecules. Electron beam irradiation was also conducted at low temperatures in order to evaluate the possible contribution from thermal degradation processes. The NEXAFS spectra of irradiated cysteine and cystine did not show substantial changes when compared to the same spectra obtained using non-irradiated samples. The sulfur K-edge photoabsorption spectrum of irradiated insulin, however, showed clear modifications when compared to the spectrum of the non-irradiated protein, even when the irradiation was conducted at low temperature. Using an empirical combination of the photoabsorption spectra of cysteine and cystine (which are associated respectively with reduced and oxidized forms of sulfur) we have been able to reproduce the absorption spectrum of irradiated insulin.

  6. Intermediality and media change

    OpenAIRE

    2012-01-01

    This book is about intermediality as an approach to analysing and understanding media change. Intermediality and Media Change is critical of technological determinism that characterises 'new media discourse' about the ongoing digitalization, framed as a revolution and creating sharp contrasts between old and new media. Intermediality instead emphasises paying attention to continuities between media of all types and privileges a comparative perspective on technological changes in media over ti...

  7. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur; Mryasov, Oleg; Kosel, Jü rgen

    2011-01-01

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR

  8. Carrier behavior in special multilayer device composed of different transition metal oxide-based intermediate connectors

    International Nuclear Information System (INIS)

    Deng, Yan-Hong; Chen, Xiang-Yu; Ou, Qing-Dong; Wang, Qian-Kun; Jiang, Xiao-Cheng; Zhang, Dan-Dan; Li, Yan-Qing

    2014-01-01

    The impact of illumination on the connection part of the tandem organic light-emitting diodes was studied by using a special organic multilayer sample consisted of two organic active layers coupled with different transition metal oxide (TMO)-based intermediate connectors (ICs). Through measuring the current density-voltage characteristic, interfacial electronic structures, and capacitance-voltage characteristic, we observe an unsymmetrical phenomenon in current density-voltage and capacitance-voltage curves of Mg:Alq 3 /MoO 3 and MoO 3 composed devices, which was induced by the charge spouting zone near the ICs region and the recombination state in the MoO 3 layer. Moreover, Mg:Alq 3 /MoO 3 composed device displays a photovoltaic effect and the V oc shifts to forward bias under illumination. Our results demonstrate that the TMO-based IC structure coupled with photovoltaic effect can be a good approach for the study of photodetector, light sensor, and so on.

  9. Pulse radiolysis studies on the formation and transformation of the one-electron reduced intermediate of Kalafungin and an analogue solution

    International Nuclear Information System (INIS)

    Anderson, R.F.; Packer, J.E.; Brimble, A.; Nairn, M.R.

    1996-01-01

    Kalafungin 1 is a member of the pyranonaphthoquinone family of antibiotics which are produced various species of Streptomyces and have in common the benzoisochromanquinone skeleton. Apart from their already documented activity against Gram-positive bacteria, fungi, and mycoplasmas, it has been suggested that in vivo reduction causes a transformation to an active hydroquinone form which functions as a bis-alkylating agent. 2 Moore 2 , 3 has suggested that these pyranonaphthoquinones may exhibit antitumour activity since the proposed mechanism of action resembles that of the anticancer agent mitomycin C 3. 2 . Rapid one-electron reduction of kalafungin 1 and a closely related analogue 2 has been carried out using The University of Auckland's pulse radiolysis facility. Pulsed electrons (4 Gy in 200 ns from a 4 MeV linear accelerator) were delivered to de-aerated aqueous solutions (10 mmol.L -1 phosphate, pH 7.0) containing 0.1 mol.L -1 sodium formate and 50 - 200 μmol.L -1 kalafungin 1 or lactol 2. Radical formation and transformations were followed by time-resolved uv/visible spectrophotometry. The transformations observed are independent of both the concentration of the parent compound and radiation doses (i.e. semiquinone concentration). The accompanying changes in absorption are consistent with the radical centre of the semiquinone species undergoing intramolecular rearrangement onto the fused non-aromatic ring structure of the compound. Possible ring opening mechanisms and the position of radical relocalisation will be discussed, as well as the involvement of radical transformation and redox chemistry in the biological activity of kalafungin1

  10. Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

    International Nuclear Information System (INIS)

    Duan Bao-Xing; Yang Yin-Tang

    2012-01-01

    In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Radiation effects on residual voltage of polyethylene films

    International Nuclear Information System (INIS)

    Kyokane, Jun; Park, Dae-Hee; Yoshino, Katsumi.

    1986-01-01

    It has recently been pointed out that diagnosis of deterioration in insulating materials for electric cables used in nuclear power plants and outer space (communications satellite in particular) can be effectively performed based on measurements of residual voltage. In the present study, polyethylene films are irradiated with γ-rays or electron beam to examine the changes in residual voltage characteristics. Irradiation of electron beam and γ-rays are carried out to a dose of 0 - 90 Mrad and 0 - 100 Mrad, respectively. Measurements are made of the dependence of residual voltage on applied voltage, electron beam and γ-ray irradiation, annealing temperature and annealing time. Results show that carriers, which are once trapped after being released from the electrode, move within the material after the opening of the circuit to produce resiual voltage. The residual voltage increases with increasing dose of electron beam or γ-ray and levels off at high dose. Residual voltage is increased about several times by either electron beam or γ-rays, but electron beam tends to cause greater residual voltage than γ-ray. Polyethylene films irradiated with electron beam can recover upon annealing. It is concluded from observations made that residual voltage has close relations with defects in molecular structures caused by radiations, particularly the breaking of backbone chains and alteration in superstructures. (Nogami, K.)

  12. Development of Multi-Functional Voltage Restore System

    Science.gov (United States)

    Suzuki, Satoshi; Ueda, Yoshinobu; Koganezawa, Takehisa; Ogihara, Yoshinori; Mori, Kenjiro; Fukazu, Naoaki

    Recently, with the dawn of the electric deregulation, the installation of distributed generation with power electronics device has grown. This current causes a greater concern of power quality, primarily voltage disturbance for power companies, and their interest in power quality is peaking. Utilities are also interested in keeping their customers satisfied, as well as keeping them on-line and creating more revenue for the utility. As a countermeasure against the above surroundings, a variety type of devices based on power electronics has been developed to protect customers' load from power line voltage disturbance. One of them is the series type voltage restore. The series device is an active device, designed to provide a pure sinusoidal load voltage at all times, correcting voltage disturbance. Series type device compensates for voltage anomalies by inserting the ‘missing’ voltage onto the line through insertion transformer and inverter. This paper shows the setting guideline of target level to compensate voltage disturbance, that is, voltage dip, voltage harmonics, voltage imbalance and voltage flicker, and the design approach of the prototype of series voltage restores to accomplish the required compensation level. The prototype system gives satisfactory compensation performance through evaluation tests, which confirm the validity and effectiveness of the system.

  13. Prediction of breakdown voltages in novel gases for high voltage insulation

    Energy Technology Data Exchange (ETDEWEB)

    Koch, M.

    2015-07-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

  14. Prediction of breakdown voltages in novel gases for high voltage insulation

    International Nuclear Information System (INIS)

    Koch, M.

    2015-01-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

  15. Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

    Directory of Open Access Journals (Sweden)

    Chaichana Amornchai

    2017-01-01

    Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

  16. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  17. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  18. Measurements of differential cross sections with electrons of intermediate energy (300-1000 eV) scattered by atom and molecule

    International Nuclear Information System (INIS)

    Barbieri, R.S.

    1985-01-01

    Differential Elastic Cross Sections for electrons scattered by osub(2) and Ar in the angular range 5 sup(0)- 140 sup(0) were measured in the energy range between 300 and 1000 eV. The Relative Flow Technique proposed by SRIVASTAVA et alii (1975) was used. Absolute Differential Elastic Cross Section data from DuBOIS and RUDD (1976) for Nsub(2) were stablished as a secondary standard. Our obtained results for Ar at 400, 800 and 1000 eV were compared against experimental and theoretical results available in the literature. For molecular Oxygen at 300, 400, 800 and 1000 eV our experimental data were compared with values from other authors and also theoretical values from Independent Atom Model including Multiple Intramolecular Scattering. Results for Ar at 1000 eV in the angular range between 60 sup(0) and 140 sup(0) and for osub(2) at 800 and 100 eV, between 5 sup(0) and 120 sup(0), were reported for the first time. (author)

  19. High-voltage CMOS detectors

    International Nuclear Information System (INIS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-01-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  20. High-voltage CMOS detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

    2016-07-11

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  1. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  2. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  3. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  4. The LMF triaxial MITL voltage adder system

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Bennett, L.F.; Lockner, T.R.; Olson, R.E.; Poukey, J.W.

    1992-01-01

    The light-ion microfusion driver design consists of multiple accelerating modules fired in coincidence and sequentially in order to provide the desired ion energy, power pulse shape and energy deposition uniformity on an Inertial Confinement Fusion (ICF) target. The basic energy source is a number of Marx generators which, through the appropriate pulse power conditioning, provide the necessary voltage pulse wave form to the accelerating gaps or feeds of each module. The cavity gaps are inductively isolated, and the voltage addition occurs in the center conductor of the voltage adder which is the positive electrode while the electrons of the sheath flow closer to the outer cylinder which is the magnetically insulated cathode electrode. Each module powers a separate two-stage extraction diode which provides a low divergence ion beam. In order to provide the two separate voltage pulses required by the diode, a triaxial adder system is designed for each module. The voltage addition occurs in two separate MITLs. The center hollow cylinder (anode) of the second MITL also serves as the outer cathode electrode for the extension of the first voltage adder MITL. The voltage of the second stage is about twice that of the first stage. The cavities are connected in series to form the outer cylinder of each module. The accelerating modules are positioned radially in a symmetrical way around the fusion chamber. A preliminary conceptual design of the LMF modules with emphasis on the voltage adders and extension MITLs will be presented and discussed

  5. Intermediate valence spectroscopy

    International Nuclear Information System (INIS)

    Gunnarsson, O.; Schoenhammer, K.

    1987-01-01

    Spectroscopic properties of intermediate valence compounds are studied using the Anderson model. Due to the large orbital and spin degeneracy N/sub f/ of the 4f-level, 1/N/sub f/ can be treated as a small parameter. This approach provides exact T = 0 results for the Anderson impurity model in the limit N/sub f/ → ∞, and by adding 1/N/sub f/ corrections some properties can be calculated accurately even for N/sub f/ = 1 or 2. In particular valence photoemission and resonance photoemission spectroscopies are studied. A comparison of theoretical and experimental spectra provides an estimate of the parameters in the model. Core level photoemission spectra provide estimates of the coupling between the f-level and the conduction states and of the f-level occupancy. With these parameters the model gives a fair description of other electron spectroscopies. For typical parameters the model predicts two structures in the f-spectrum, namely one structure at the f-level and one at the Fermi energy. The resonance photoemission calculation gives a photon energy dependence for these two peaks in fair agreement with experiment. The peak at the Fermi energy is partly due to a narrow Kondo resonance, resulting from many-body effects and the presence of a continuous, partly filled conduction band. This resonance is related to a large density of low-lying excitations, which explains the large susceptibility and specific heat observed for these systems at low temperatures. 38 references, 11 figures, 2 tables

  6. Electronic, Structural, and Electrochemical Properties of LiNixCuyMn2-x-yO4 (0 < x < 0.5, 0 < y < 0.5) High-Voltage Spinel Materials

    International Nuclear Information System (INIS)

    Yang, Ming-Che; Xu, Bo; Cheng, Ju-Hsiang; Pan, Chun-Jern; Hwang, Bing-Joe; Meng, Ying S.

    2011-01-01

    First principles computation is carried out for investigating the electronic, structural, and electrochemical properties of LiM 1/2 Mn 3/2 O 4 (M = Ti, V, Cr, Fe, Co, Ni, and Cu). The computation results suggest that doping with Co or Cu can potentially lower Li diffusion barrier as compared to Ni doping. Our experimental research has focused on LiNi x Cu y Mn 2-x-y O 4 (0 x Cu y Mn 2-x-6 O 4 (0 0.25 Cu 0.25 Mn 1.50 O 4 , the proposed explanation of the voltage profile by the first principles computation was proven, a second plateau at 4.2 V originates from the oxidation of Cu 2+ to Cu 3+ , and the plateau at 4.95 V may originate from extra electrons provided by oxygen ions. Although the reversible discharge capacity decreases with increasing Cu amount, optimized composition such as LiCu 0.25 Ni 0.25 Mn 1.5 O 4 exhibits high capacities at high rates.

  7. Amorphous-like interfacial layer between a high-Tc superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

    International Nuclear Information System (INIS)

    Kim, Bongjun; Kim, Hyuntak; Nagai, Takuro; Matsui, Yoshio; Horiuchi, Shigeo; Jeong, Daeyeong; Deinhofer, Christian; Gritzner, Gerhard; Kim, Youngmin; Kim, Younjoong

    2006-01-01

    The thin amorphous-like layer, formed at the interface between a high-T c superconducting (Tl 0.5 , Pb 0.5 )(Sr 0.8 , Ba 0.2 )Ca 2 Cu 3 O y (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO 2 + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

  8. Amorphous-like interfacial layer between a high-T{sub c} superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bongjun; Kim, Hyuntak [Electronics and Tele-Communications Research Institute, Daejeon (Korea, Republic of); Nagai, Takuro; Matsui, Yoshio [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Horiuchi, Shigeo; Jeong, Daeyeong [Electrotechnology Research Institute, Changwon (Korea, Republic of); Deinhofer, Christian; Gritzner, Gerhard [Johannes Kepler University, Linz (Austria); Kim, Youngmin; Kim, Younjoong [Electron Microscopy Team, Korea Basic Science Institute, Daejeon (Korea, Republic of)

    2006-05-15

    The thin amorphous-like layer, formed at the interface between a high-T{sub c} superconducting (Tl{sub 0.5}, Pb{sub 0.5})(Sr{sub 0.8}, Ba{sub 0.2})Ca{sub 2}Cu{sub 3}O{sub y} (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO{sub 2} + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

  9. Voltage generators of high voltage high power accelerators

    International Nuclear Information System (INIS)

    Svinin, M.P.

    1981-01-01

    High voltage electron accelerators are widely used in modern radiation installations for industrial purposes. In the near future further increasing of their power may be effected, which enables to raise the efficiency of the radiation processes known and to master new power-consuming production in industry. Improvement of HV generators by increasing their power and efficiency is one of many scientific and engineering aspects the successful solution of which provides further development of these accelerators and their technical parameters. The subject is discussed in detail. (author)

  10. an intermediate moisture meat

    African Journals Online (AJOL)

    STORAGESEVER

    2008-07-04

    Jul 4, 2008 ... traditional SM muscle without compromising quality. ... technique is intermediate moisture food processing. ... Traditionally, most tsire suya producers use ..... quality of Chinese purebred and European X Chinese crossbred ...

  11. Bacterial intermediate filaments

    DEFF Research Database (Denmark)

    Charbon, Godefroid; Cabeen, M.; Jacobs-Wagner, C.

    2009-01-01

    Crescentin, which is the founding member of a rapidly growing family of bacterial cytoskeletal proteins, was previously proposed to resemble eukaryotic intermediate filament (IF) proteins based on structural prediction and in vitro polymerization properties. Here, we demonstrate that crescentin...

  12. Mapping Intermediality in Performance

    NARCIS (Netherlands)

    2010-01-01

    Mapping Intermediality in Performance benadert het vraagstuk van intermedialiteit met betrekking tot performance (vooral theater) vanuit vijf verschillende invalshoeken: performativiteit en lichaam; tijd en ruimte; digitale cultuur en posthumanisme; netwerken; pedagogiek en praxis. In deze boeiende

  13. Intermediate algebra & analytic geometry

    CERN Document Server

    Gondin, William R

    1967-01-01

    Intermediate Algebra & Analytic Geometry Made Simple focuses on the principles, processes, calculations, and methodologies involved in intermediate algebra and analytic geometry. The publication first offers information on linear equations in two unknowns and variables, functions, and graphs. Discussions focus on graphic interpretations, explicit and implicit functions, first quadrant graphs, variables and functions, determinate and indeterminate systems, independent and dependent equations, and defective and redundant systems. The text then examines quadratic equations in one variable, system

  14. Fiber-optic voltage measuring system

    Science.gov (United States)

    Ye, Miaoyuan; Nie, De-Xin; Li, Yan; Peng, Yu; Lin, Qi-Qing; Wang, Jing-Gang

    1993-09-01

    A new fibre optic voltage measuring system has been developed based on the electrooptic effect of bismuth germanium oxide (Bi4Ge3O12)crystal. It uses the LED as the light source. The light beam emitted from the light source is transmitted to the sensor through the optic fibre and the intensity of the output beam is changed by the applied voltage. This optic signal is transmitted to the PIN detector and converted to an electric signal which is processed by the electronic circuit and 8098 single chip microcomputer the output voltage signal obtained is directly proportional to the applied voltage. This paper describes the principle the configuration and the performance parameters of the system. Test results are evaluated and discussed.

  15. Constant potential high-voltage generator

    International Nuclear Information System (INIS)

    Resnick, T.A.; Dupuis, W.A.; Palermo, T.

    1980-01-01

    An X-ray tube voltage generator with automatic stabilization circuitry is disclosed. The generator includes a source of pulsating direct current voltage such as from a rectified 3 phase transformer. This pulsating voltage is supplied to the cathode and anode of an X-ray tube and forms an accelerating potential for electrons within that tube. The accelerating potential is stabilized with a feedback signal which is provided by a feedback network. The network includes an error signal generator which compares an instantaneous accelerating potential with a preferred reference accelerating potential and generates an error function. This error function is transmitted to a control tube grid which in turn causes the voltage difference between X-ray tube cathode and anode to stabilize and thereby reduce the error function. In this way stabilized accelerating potentials are realized and uniform X-ray energy distributions produced. (Auth.)

  16. Nuclear physics with intermediate energy electrons

    International Nuclear Information System (INIS)

    Moniz, E.J.

    1988-01-01

    Nuclear physics is the study of strongly interacting matter and of the forces which govern its structure and dynamics. The goal of this paper is to give an understanding of nuclei as quantal many-body systems and of the nature of the strong force, ultimately in terms of the presumed underlying theory of quantum chromodynamics. The latter task will require a deeper understanding of hadron structure and of color confinement and, in turn, will provide the basis for exploring the structure of matter under extreme conditions, such as very high density or temperature. This program covers a very broad range of phenomena, theoretical concepts, and experimental tools and is reflected in the diverse degrees of freedom invoked in various contexts. This is indicated where degrees of freedom loosely identified with successively smaller distance scales are indicated. Very importantly, theoretical bridges have been built between the phenomenological descriptions associated with each set of degress of freedom. The mean field, determined self-consistently from the interactions of nucleons in quantum orbits, provides the basis for much of the authors microscopic understanding of nuclear structure and of our characterization of nuclear scattering processes. However, the authors are only beginning to address quantitatively the physics associated with short-range correlations, physics which takes us beyond the mean field description. The nuclear force has a very successful semi-phenomenological description in terms of hadronic degrees of freedom, both mesons and nucleon isobars. More problematic, of course, is our understanding of hadron structure and dynamics in terms of QCD

  17. Control Method for DC-Link Voltage Ripple Cancellation in Voltage Source Inverter under Unbalanced Three-Phase Voltage Supply Conditions

    Czech Academy of Sciences Publication Activity Database

    Chomát, Miroslav; Schreier, Luděk

    2005-01-01

    Roč. 152, č. 3 (2005), s. 494-500 ISSN 1350-2352 R&D Projects: GA ČR(CZ) GA102/02/0554 Institutional research plan: CEZ:AV0Z20570509 Keywords : DC-link voltage * unbalanced three-phase voltage Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.587, year: 2005

  18. Switching between dynamic states in intermediate-length Josephson junctions

    DEFF Research Database (Denmark)

    Pagano, S.; Sørensen, Mads Peter; Parmentier, R. D.

    1986-01-01

    The appearance of zero-field steps (ZFS’s) in the current-voltage characteristics of intermediate-length overlap-geometry Josephson tunnel junctions described by a perturbed sine-Gordon equation (PSGE) is associated with the growth of parametrically excited instabilities of the McCumber backgroun...

  19. based dynamic voltage restorer

    African Journals Online (AJOL)

    HOD

    operation due to presence of increased use of nonlinear loads (computers, microcontrollers ... simulations of a dynamic voltage restorer (DVR) was achieved using MATLAB/Simulink. ..... using Discrete PWM generator, then the IGBT inverter.

  20. Electron-deficient N-alkyloyl derivatives of thieno[3,4-c]pyrrole-4,6-dione yield efficient polymer solar cells with open-circuit voltages > 1 v

    KAUST Repository

    Warnan, Julien

    2014-05-13

    Poly(benzo[1,2-b:4,5-b′]dithiophene-thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors yield some of the highest open-circuit voltages (V OC, ca. 0.9 V) and fill factors (FF, ca. 70%) in conventional bulk-heterojunction (BHJ) solar cells with PCBM acceptors. Recent work has shown that the incorporation of ring substituents into the side chains of the BDT motifs in PBDTTPD can induce subtle variations in material properties, resulting in an increase of the BHJ device VOC to ∼1 V. In this contribution, we report on the synthesis of N-alkyloyl-substituted TPD motifs (TPD(CO)) and show that the electron-deficient motifs can further lower both the polymer LUMO and HOMO levels, yielding device VOC > 1 V (up to ca. 1.1 V) in BHJ solar cells with PCBM. Despite the high VOC achieved (i.e., low polymer HOMO), BHJ devices cast from TPD(CO)-based polymer donors can reach power conversion efficiencies (PCEs) of up to 6.7%, making these promising systems for use in the high-band-gap cell of tandem solar cells. © 2014 American Chemical Society.

  1. 1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

    Science.gov (United States)

    Hou, Bin; Ma, Xiaohua; Yang, Ling; Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Mi, Minhan; Zhang, Hengshuang; Zhang, Meng; Zhang, Peng; Zhou, Xiaowei; Hao, Yue

    2017-07-01

    In this paper, a normally-off AlGaN/GaN high-electron-mobility transistors (HEMT) fabricated using inductively coupled plasma (ICP) CF4 plasma recessing and an implantation technique is reported. A gate-to-channel distance of ˜10 nm and an equivalent negative fluorine sheet charge density of -1.21 × 1013 cm-2 extracted using a simple threshold voltage (V th) analytical model result in a high V th of 1.5 V, a peak transconductance of 356 mS/mm, and a subthreshold slope of 133 mV/decade. A small degradation of channel mobility leads to a high RF performance with f T/f max of 41/125 GHz, resulting in a record high f T × L g product of 10.66 GHz·µm among Schottky barrier AlGaN/GaN normally-off HEMTs with V th exceeding 1 V, to the best of our knowledge.

  2. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    International Nuclear Information System (INIS)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-01-01

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  3. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    Energy Technology Data Exchange (ETDEWEB)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo, E-mail: park@physics.auburn.edu [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  4. [Therapy of intermediate uveitis].

    Science.gov (United States)

    Doycheva, D; Deuter, C; Zierhut, M

    2014-12-01

    Intermediate uveitis is a form of intraocular inflammation in which the vitreous body is the major site of inflammation. Intermediate uveitis is primarily treated medicinally and systemic corticosteroids are the mainstay of therapy. When recurrence of uveitis or side effects occur during corticosteroid therapy an immunosuppressive treatment is required. Cyclosporine A is the only immunosuppressive agent that is approved for therapy of uveitis in Germany; however, other immunosuppressive drugs have also been shown to be effective and well-tolerated in patients with intermediate uveitis. In severe therapy-refractory cases when conventional immunosuppressive therapy has failed, biologics can be used. In patients with unilateral uveitis or when the systemic therapy is contraindicated because of side effects, an intravitreal steroid treatment can be carried out. In certain cases a vitrectomy may be used.

  5. Modeling and simulation of dynamic voltage restorer in power system

    International Nuclear Information System (INIS)

    Abdel Aziz, M.A.A.M.

    2012-01-01

    There are many loads subjected to several Power Quality Problems such as voltage sags/swells, unbalance, harmonics distortion, and short interruption. These loads encompass a wide range of equipment which are very sensitive to voltage disturbances. The Dynamic Voltage Restorer (DVR) has recently been introduced to protect sensitive loads from voltage sags and other voltage disturbances in addition to this, it mitigates current harmonics distortion. It is a series connected power electronic based device. It is considered as one of the most efficient and effective solutions. Its appeal includes smaller size and fast dynamic response to disturbances. This work describes a proposal of the DVR to improve power quality distribution (medium voltage) system. The control of the compensation voltage and harmonics cancellation in the DVR is based on Adaptive Noise Canceling (ANC) technique. Simulation results carried out by PSCAD/EMTDC to investigate the performance of the proposed method.

  6. Mobile communication and intermediality

    DEFF Research Database (Denmark)

    Helles, Rasmus

    2013-01-01

    communicative affordances of mobile devices in order to understand how people choose between them for different purposes. It is argued that mobile communication makes intermediality especially central, as the choice of medium is detached from the location of stationary media and begins to follow the user across......The article argues the importance of intermediality as a concept for research in mobile communication and media. The constant availability of several, partially overlapping channels for communication (texting, calls, email, Facebook, etc.) requires that we adopt an integrated view of the various...

  7. Money distribution with intermediation

    OpenAIRE

    Teles, Caio Augusto Colnago

    2013-01-01

    This pap er analyzes the distribution of money holdings in a commo dity money search-based mo del with intermediation. Intro ducing heterogeneity of costs to the Kiyotaki e Wright ( 1989 ) mo del, Cavalcanti e Puzzello ( 2010) gives rise to a non-degenerated distribution of money. We extend further this mo del intro ducing intermediation in the trading pro cess. We show that the distribution of money matters for savings decisions. This gives rises to a xed p oint problem for the ...

  8. An Inexpensive Source of High Voltage

    Science.gov (United States)

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  9. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  10. Silicone elastomers with covalently incorporated aromatic voltage stabilisers

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam; Skov, Anne Ladegaard

    2017-01-01

    to the incorporationof an aromatic voltage stabiliser, were prepared by cross-linking synthesised polydimethylsiloxane–polyphenylmethylsiloxane (PDMS–PPMS) copolymers. PPMS possesses voltage stabilisation capabilitiesbut is immiscible in PDMS, and thus the copolymerisation of the two components was necessary...... forhomogeneity. Concentrations of the voltage stabiliser were varied by changing the molecular weights ofthe PPMS in the copolymer. The developed elastomers were inherently soft with enhanced electricalbreakdown strengths, due to delocalisedp-electrons of the aromatic constituent. An optimumconcentration...

  11. Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell

    International Nuclear Information System (INIS)

    Marti, A.; Lopez, N.; Antolin, E.; Canovas, E.; Stanley, C.; Farmer, C.; Cuadra, L.; Luque, A.

    2006-01-01

    The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation

  12. Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Marti, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)]. E-mail: amarti@etsit.upm.es; Lopez, N. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Antolin, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Canovas, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Stanley, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Farmer, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Cuadra, L. [Departamento de Teoria de la Senal y Comunicaciones- Escuela Politecnica Superior, Universidad de Alcala, Ctra. Madrid-Barcelona, km. 33600, 28805-Alcala de Henares (Madrid) (Spain); Luque, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)

    2006-07-26

    The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation.

  13. Experimental validation of prototype high voltage bushing

    Science.gov (United States)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  14. Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    International Nuclear Information System (INIS)

    Nichterwitz, Melanie

    2012-01-01

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

  15. Redox regulation of protein tyrosine phosphatase 1B (PTP1B): Importance of steric and electronic effects on the unusual cyclization of the sulfenic acid intermediate to a sulfenyl amide

    Science.gov (United States)

    Sarma, Bani Kanta

    2013-09-01

    The redox regulation of protein tyrosine phosphatase 1B (PTP1B) via the unusual transformation of its sulfenic acid (PTP1B-SOH) to a cyclic sulfenyl amide intermediate is studied by using small molecule chemical models. These studies suggest that the sulfenic acids derived from the H2O2-mediated reactions o-amido thiophenols do not efficiently cyclize to sulfenyl amides and the sulfenic acids produced in situ can be trapped by using methyl iodide. Theoretical calculations suggest that the most stable conformer of such sulfenic acids are stabilized by nO → σ*S-OH orbital interactions, which force the -OH group to adopt a position trans to the S⋯O interaction, leading to an almost linear arrangement of the O⋯S-O moiety and this may be the reason for the slow cyclization of such sulfenic acids to their corresponding sulfenyl amides. On the other hand, additional substituents at the 6-position of o-amido phenylsulfenic acids that can induce steric environment and alter the electronic properties around the sulfenic acid moiety by S⋯N or S⋯O nonbonded interactions destabilize the sulfenic acids by inducing strain in the molecule. This may lead to efficient the cyclization of such sulfenic acids. This model study suggests that the amino acid residues in the close proximity of the sulfenic acid moiety in PTP1B may play an important role in the cyclization of PTP1B-SOH to produce the corresponding sulfenyl amide.

  16. Harmonic current interaction at a low voltage customer's installations

    NARCIS (Netherlands)

    Bhattacharyya, S.; Myrzik, J.M.A.; Kling, W.L.; Cobben, J.F.G.; Casteren, van J.

    2009-01-01

    The increased uses of power electronics and switching devices in the electricity network have changed the operational environment of the power system. These devices have nonlinear voltage-current characteristics and produce harmonic currents, and consequently distort the voltage waveform. A low

  17. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...

  18. Variation of microchannel plate resistance with temperature and applied voltage

    International Nuclear Information System (INIS)

    Pearson, J.F.; Fraser, G.W.; Whiteley, M.J.

    1987-01-01

    The resistance of microchannel plate electron multiplier is well known to be a function of both applied voltage and detector temperature. We show that the apparent variation of resistance with bias voltage is simply due to plate temperature increases resulting from resistive heating. (orig.)

  19. Precision High-Voltage DC Dividers and Their Calibration

    Czech Academy of Sciences Publication Activity Database

    Dragounová, Naděžda

    2005-01-01

    Roč. 54, č. 5 (2005), s. 1911-1915 ISSN 0018-9456 R&D Projects: GA AV ČR KSK1048102; GA ČR GA202/03/0889 Keywords : calibration * dc voltage * high voltage (HV) Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.665, year: 2005

  20. Electronics

    Science.gov (United States)

    2001-01-01

    International Acer Incorporated, Hsin Chu, Taiwan Aerospace Industrial Development Corporation, Taichung, Taiwan American Institute of Taiwan, Taipei, Taiwan...Singapore and Malaysia .5 - 4 - The largest market for semiconductor products is the high technology consumer electronics industry that consumes up...Singapore, and Malaysia . A new semiconductor facility costs around $3 billion to build and takes about two years to become operational

  1. The Intermediate Neutrino Program

    CERN Document Server

    Adams, C.; Ankowski, A.M.; Asaadi, J.A.; Ashenfelter, J.; Axani, S.N.; Babu, K.; Backhouse, C.; Band, H.R.; Barbeau, P.S.; Barros, N.; Bernstein, A.; Betancourt, M.; Bishai, M.; Blucher, E.; Bouffard, J.; Bowden, N.; Brice, S.; Bryan, C.; Camilleri, L.; Cao, J.; Carlson, J.; Carr, R.E.; Chatterjee, A.; Chen, M.; Chen, S.; Chiu, M.; Church, E.D.; Collar, J.I.; Collin, G.; Conrad, J.M.; Convery, M.R.; Cooper, R.L.; Cowen, D.; Davoudiasl, H.; de Gouvea, A.; Dean, D.J.; Deichert, G.; Descamps, F.; DeYoung, T.; Diwan, M.V.; Djurcic, Z.; Dolinski, M.J.; Dolph, J.; Donnelly, B.; Dwyer, D.A.; Dytman, S.; Efremenko, Y.; Everett, L.L.; Fava, A.; Figueroa-Feliciano, E.; Fleming, B.; Friedland, A.; Fujikawa, B.K.; Gaisser, T.K.; Galeazzi, M.; Galehouse, D.C.; Galindo-Uribarri, A.; Garvey, G.T.; Gautam, S.; Gilje, K.E.; Gonzalez-Garcia, M.; Goodman, M.C.; Gordon, H.; Gramellini, E.; Green, M.P.; Guglielmi, A.; Hackenburg, R.W.; Hackenburg, A.; Halzen, F.; Han, K.; Hans, S.; Harris, D.; Heeger, K.M.; Herman, M.; Hill, R.; Holin, A.; Huber, P.; Jaffe, D.E.; Johnson, R.A.; Joshi, J.; Karagiorgi, G.; Kaufman, L.J.; Kayser, B.; Kettell, S.H.; Kirby, B.J.; Klein, J.R.; Kolomensky, Yu. G.; Kriske, R.M.; Lane, C.E.; Langford, T.J.; Lankford, A.; Lau, K.; Learned, J.G.; Ling, J.; Link, J.M.; Lissauer, D.; Littenberg, L.; Littlejohn, B.R.; Lockwitz, S.; Lokajicek, M.; Louis, W.C.; Luk, K.; Lykken, J.; Marciano, W.J.; Maricic, J.; Markoff, D.M.; Martinez Caicedo, D.A.; Mauger, C.; Mavrokoridis, K.; McCluskey, E.; McKeen, D.; McKeown, R.; Mills, G.; Mocioiu, I.; Monreal, B.; Mooney, M.R.; Morfin, J.G.; Mumm, P.; Napolitano, J.; Neilson, R.; Nelson, J.K.; Nessi, M.; Norcini, D.; Nova, F.; Nygren, D.R.; Orebi Gann, G.D.; Palamara, O.; Parsa, Z.; Patterson, R.; Paul, P.; Pocar, A.; Qian, X.; Raaf, J.L.; Rameika, R.; Ranucci, G.; Ray, H.; Reyna, D.; Rich, G.C.; Rodrigues, P.; Romero, E.Romero; Rosero, R.; Rountree, S.D.; Rybolt, B.; Sanchez, M.C.; Santucci, G.; Schmitz, D.; Scholberg, K.; Seckel, D.; Shaevitz, M.; Shrock, R.; Smy, M.B.; Soderberg, M.; Sonzogni, A.; Sousa, A.B.; Spitz, J.; St. John, J.M.; Stewart, J.; Strait, J.B.; Sullivan, G.; Svoboda, R.; Szelc, A.M.; Tayloe, R.; Thomson, M.A.; Toups, M.; Vacheret, A.; Vagins, M.; Van de Water, R.G.; Vogelaar, R.B.; Weber, M.; Weng, W.; Wetstein, M.; White, C.; White, B.R.; Whitehead, L.; Whittington, D.W.; Wilking, M.J.; Wilson, R.J.; Wilson, P.; Winklehner, D.; Winn, D.R.; Worcester, E.; Yang, L.; Yeh, M.; Yokley, Z.W.; Yoo, J.; Yu, B.; Yu, J.; Zhang, C.

    2015-01-01

    The US neutrino community gathered at the Workshop on the Intermediate Neutrino Program (WINP) at Brookhaven National Laboratory February 4-6, 2015 to explore opportunities in neutrino physics over the next five to ten years. Scientists from particle, astroparticle and nuclear physics participated in the workshop. The workshop examined promising opportunities for neutrino physics in the intermediate term, including possible new small to mid-scale experiments, US contributions to large experiments, upgrades to existing experiments, R&D plans and theory. The workshop was organized into two sets of parallel working group sessions, divided by physics topics and technology. Physics working groups covered topics on Sterile Neutrinos, Neutrino Mixing, Neutrino Interactions, Neutrino Properties and Astrophysical Neutrinos. Technology sessions were organized into Theory, Short-Baseline Accelerator Neutrinos, Reactor Neutrinos, Detector R&D and Source, Cyclotron and Meson Decay at Rest sessions.This report summ...

  2. The Intermediate Neutrino Program

    Energy Technology Data Exchange (ETDEWEB)

    Adams, C.; et al.

    2015-03-23

    The US neutrino community gathered at the Workshop on the Intermediate Neutrino Program (WINP) at Brookhaven National Laboratory February 4-6, 2015 to explore opportunities in neutrino physics over the next five to ten years. Scientists from particle, astroparticle and nuclear physics participated in the workshop. The workshop examined promising opportunities for neutrino physics in the intermediate term, including possible new small to mid-scale experiments, US contributions to large experiments, upgrades to existing experiments, R&D plans and theory. The workshop was organized into two sets of parallel working group sessions, divided by physics topics and technology. Physics working groups covered topics on Sterile Neutrinos, Neutrino Mixing, Neutrino Interactions, Neutrino Properties and Astrophysical Neutrinos. Technology sessions were organized into Theory, Short-Baseline Accelerator Neutrinos, Reactor Neutrinos, Detector R&D and Source, Cyclotron and Meson Decay at Rest sessions.This report summarizes discussion and conclusions from the workshop.

  3. The Intermediate Neutrino Program

    Energy Technology Data Exchange (ETDEWEB)

    Adams, C. [Yale Univ., New Haven, CT (United States); Alonso, J. R. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Ankowski, A. M. [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Asaadi, J. A. [Syracuse Univ., NY (United States); Ashenfelter, J. [Yale Univ., New Haven, CT (United States); Axani, S. N. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Babu, K [Oklahoma State Univ., Stillwater, OK (United States); Backhouse, C. [California Inst. of Technology (CalTech), Pasadena, CA (United States); Band, H. R. [Yale Univ., New Haven, CT (United States); Barbeau, P. S. [Duke Univ., Durham, NC (United States); Barros, N. [Univ. of Pennsylvania, Philadelphia, PA (United States); Bernstein, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Betancourt, M. [Illinois Inst. of Technology, Chicago, IL (United States); Bishai, M. [Brookhaven National Lab. (BNL), Upton, NY (United States); Blucher, E. [Univ. of Chicago, IL (United States); Bouffard, J. [State Univ. of New York (SUNY), Albany, NY (United States); Bowden, N. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Brice, S. [Illinois Inst. of Technology, Chicago, IL (United States); Bryan, C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Camilleri, L. [Columbia Univ., New York, NY (United States); Cao, J. [Inst. of High Energy Physics, Beijing (China); Carlson, J. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Carr, R. E. [Columbia Univ., New York, NY (United States); Chatterjee, A. [Univ. of Texas, Arlington, TX (United States); Chen, M. [Univ. of California, Irvine, CA (United States); Chen, S. [Tsinghua Univ., Beijing (China); Chiu, M. [Brookhaven National Lab. (BNL), Upton, NY (United States); Church, E. D. [Illinois Inst. of Technology, Chicago, IL (United States); Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Collar, J. I. [Univ. of Chicago, IL (United States); Collin, G. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Conrad, J. M. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Convery, M. R. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Cooper, R. L. [Indiana Univ., Bloomington, IN (United States); Cowen, D. [Pennsylvania State Univ., University Park, PA (United States); Davoudiasl, H. [Brookhaven National Lab. (BNL), Upton, NY (United States); Gouvea, A. D. [Northwestern Univ., Evanston, IL (United States); Dean, D. J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Deichert, G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Descamps, F. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); DeYoung, T. [Michigan State Univ., East Lansing, MI (United States); Diwan, M. V. [Brookhaven National Lab. (BNL), Upton, NY (United States); Djurcic, Z. [Argonne National Lab. (ANL), Argonne, IL (United States); Dolinski, M. J. [Drexel Univ., Philadelphia, PA (United States); Dolph, J. [Brookhaven National Lab. (BNL), Upton, NY (United States); Donnelly, B. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Dwyer, D. A. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Dytman, S. [Univ. of Pittsburgh, PA (United States); Efremenko, Y. [Univ. of Tennessee, Knoxville, TN (United States); Everett, L. L. [Univ. of Wisconsin, Madison, WI (United States); Fava, A. [University of Padua, Padova (Italy); Figueroa-Feliciano, E. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Fleming, B. [Yale Univ., New Haven, CT (United States); Friedland, A. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Fujikawa, B. K. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Gaisser, T. K. [Univ. of Delaware, Newark, DE (United States); Galeazzi, M. [Univ. of Miami, FL (United States); Galehouse, DC [Univ. of Akron, OH (United States); Galindo-Uribarri, A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Garvey, G. T. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Gautam, S. [Tribhuvan Univ., Kirtipur (Nepal); Gilje, K. E. [Illinois Inst. of Technology, Chicago, IL (United States); Gonzalez-Garcia, M. [Stony Brook Univ., NY (United States); Goodman, M. C. [Argonne National Lab. (ANL), Argonne, IL (United States); Gordon, H. [Brookhaven National Lab. (BNL), Upton, NY (United States); Gramellini, E. [Yale Univ., New Haven, CT (United States); Green, M. P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Guglielmi, A. [University of Padua, Padova (Italy); Hackenburg, R. W. [Brookhaven National Lab. (BNL), Upton, NY (United States); Hackenburg, A. [Yale Univ., New Haven, CT (United States); Halzen, F. [Univ. of Wisconsin, Madison, WI (United States); Han, K. [Yale Univ., New Haven, CT (United States); Hans, S. [Brookhaven National Lab. (BNL), Upton, NY (United States); Harris, D. [Illinois Inst. of Technology, Chicago, IL (United States); Heeger, K. M. [Yale Univ., New Haven, CT (United States); Herman, M. [Brookhaven National Lab. (BNL), Upton, NY (United States); Hill, R. [Univ. of Chicago, IL (United States); Holin, A. [Univ. College London, Bloomsbury (United Kingdom); Huber, P. [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Jaffe, D. E. [Brookhaven National Lab. (BNL), Upton, NY (United States); Johnson, R. A. [Univ. of Cincinnati, OH (United States); Joshi, J. [Brookhaven National Lab. (BNL), Upton, NY (United States); Karagiorgi, G. [Univ. of Manchester (United Kingdom); Kaufman, L. J. [Indiana Univ., Bloomington, IN (United States); Kayser, B. [Illinois Inst. of Technology, Chicago, IL (United States); Kettell, S. H. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kirby, B. J. [Brookhaven National Lab. (BNL), Upton, NY (United States); Klein, J. R. [Univ. of Texas, Arlington, TX (United States); Kolomensky, Y. G. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States); Kriske, R. M. [Univ. of Minnesota, Minneapolis, MN (United States); Lane, C. E. [Drexel Univ., Philadelphia, PA (United States); Langford, T. J. [Yale Univ., New Haven, CT (United States); Lankford, A. [Univ. of California, Irvine, CA (United States); Lau, K. [Univ. of Houston, TX (United States); Learned, J. G. [Univ. of Hawaii, Honolulu, HI (United States); Ling, J. [Univ. of Illinois, Urbana-Champaign, IL (United States); Link, J. M. [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Lissauer, D. [Brookhaven National Lab. (BNL), Upton, NY (United States); Littenberg, L. [Brookhaven National Lab. (BNL), Upton, NY (United States); Littlejohn, B. R. [Illinois Inst. of Technology, Chicago, IL (United States); Lockwitz, S. [Illinois Inst. of Technology, Chicago, IL (United States); Lokajicek, M. [Inst. of Physics of the Academy of Sciences of Czech Republic, Prague (Czech Republic); Louis, W. C. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Luk, K. [Univ. of California, Berkeley, CA (United States); Lykken, J. [Illinois Inst. of Technology, Chicago, IL (United States); Marciano, W. J. [Brookhaven National Lab. (BNL), Upton, NY (United States); Maricic, J. [Univ. of Hawaii, Honolulu, HI (United States); Markoff, D. M. [North Carolina Central Univ., Durham, NC (United States); Caicedo, D. A. M. [Illinois Inst. of Technology, Chicago, IL (United States); Mauger, C. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Mavrokoridis, K. [Univ. of Liverpool (United Kingdom); McCluskey, E. [Illinois Inst. of Technology, Chicago, IL (United States); McKeen, D. [Univ. of Washington, Seattle, WA (United States); McKeown, R. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Mills, G. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Mocioiu, I. [Pennsylvania State Univ., University Park, PA (United States); Monreal, B. [Univ. of California, Santa Barbara, CA (United States); Mooney, M. R. [Brookhaven National Lab. (BNL), Upton, NY (United States); Morfin, J. G. [Illinois Inst. of Technology, Chicago, IL (United States); Mumm, P. [National Inst. of Standards and Technology (NIST), Boulder, CO (United States); Napolitano, J. [Temple Univ., Philadelphia, PA (United States); Neilson, R. [Drexel Univ., Philadelphia, PA (United States); Nelson, J. K. [College of William and Mary, Williamsburg, VA (United States); Nessi, M. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); Norcini, D. [Yale Univ., New Haven, CT (United States); Nova, F. [Univ. of Texas, Austin, TX (United States); Nygren, D. R. [Univ. of Texas, Arlington, TX (United States); Gann, GDO [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States); Palamara, O. [Illinois Inst. of Technology, Chicago, IL (United States); Parsa, Z. [Brookhaven National Lab. (BNL), Upton, NY (United States); Patterson, R. [California Inst. of Technology (CalTech), Pasadena, CA (United States); Paul, P. [Stony Brook Univ., NY (United States); Pocar, A. [Univ. of Massachusetts, Amherst, MA (United States); Qian, X. [Brookhaven National Lab. (BNL), Upton, NY (United States); Raaf, J. L. [Illinois Inst. of Technology, Chicago, IL (United States); Rameika, R. [Illinois Inst. of Technology, Chicago, IL (United States); Ranucci, G. [National Inst. of Nuclear Physics, Milano (Italy); Ray, H. [Univ. of Florida, Gainesville, FL (United States); Reyna, D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Rich, G. C. [Triangle Universities Nuclear Lab., Durham, NC (United States); Rodrigues, P. [Univ. of Rochester, NY (United States); Romero, E. R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States); Rosero, R. [Brookhaven National Lab. (BNL), Upton, NY (United States); Rountree, S. D. [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Rybolt, B. [Univ. of Tennessee, Knoxville, TN (United States); Sanchez, M. C. [Iowa State Univ., Ames, IA (United States); Santucci, G. [Stony Brook Univ., NY (United States); Schmitz, D. [Univ. of Chicago, IL (United States); Scholberg, K. [Duke Univ., Durham, NC (United States); Seckel, D. [Univ. of Delaware, Newark, DE (United States); Shaevitz, M. [Columbia Univ., New York, NY (United States); Shrock, R. [Stony Brook Univ., NY (United States); Smy, M. B. [Univ. of California, Irvine, CA (United States); Soderberg, M. [Syracuse Univ., NY (United States); Sonzogni, A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Sousa, A. B. [Univ. of Cincinnati, OH (United States); Spitz, J. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); John, J. M. S. [Univ. of Cincinnati, OH (United States); Stewart, J. [Brookhaven National Lab. (BNL), Upton, NY (United States); Strait, J. B. [Illinois Inst. of Technology, Chicago, IL (United States); Sullivan, G. [Univ. of Maryland, College Park, MD (United States); Svoboda, R. [Univ. of California, Davis, CA (United States); Szelc, A. M. [Yale Univ., New Haven, CT (United States); Tayloe, R. [Indiana Univ., Bloomington, IN (United States); Thomson, M. A. [Univ. of Cambridge (United Kingdom); Toups, M. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Vacheret, A. [Univ. of Oxford (United Kingdom); Vagins, M. [Univ. of California, Irvine, CA (United States); Water, R. G. V. D. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Vogelaar, R. B. [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Weber, M. [Bern (Switzerland); Weng, W. [Brookhaven National Lab. (BNL), Upton, NY (United States); Wetstein, M. [Univ. of Chicago, IL (United States); White, C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); White, B. R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Whitehead, L. [Univ. of Houston, TX (United States); Whittington, D. W. [Indiana Univ., Bloomington, IN (United States); Wilking, M. J. [Stony Brook Univ., NY (United States); Wilson, R. J. [Colorado State Univ., Fort Collins, CO (United States); Wilson, P. [Illinois Inst. of Technology, Chicago, IL (United States); Winklehner, D. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Winn, D. R. [Fairfield Univ., CT (United States); Worcester, E. [Brookhaven National Lab. (BNL), Upton, NY (United States); Yang, L. [Univ. of Illinois, Urbana-Champaign, IL (United States); Yeh, M [Brookhaven National Lab. (BNL), Upton, NY (United States); Yokley, Z. W. [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Yoo, J. [Illinois Inst. of Technology, Chicago, IL (United States); Yu, B. [Brookhaven National Lab. (BNL), Upton, NY (United States); Yu, J. [Univ. of Texas, Arlington, TX (United States); Zhang, C. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2017-04-03

    The US neutrino community gathered at the Workshop on the Intermediate Neutrino Program (WINP) at Brookhaven National Laboratory February 4-6, 2015 to explore opportunities in neutrino physics over the next five to ten years. Scientists from particle, astroparticle and nuclear physics participated in the workshop. The workshop examined promising opportunities for neutrino physics in the intermediate term, including possible new small to mid-scale experiments, US contributions to large experiments, upgrades to existing experiments, R&D plans and theory. The workshop was organized into two sets of parallel working group sessions, divided by physics topics and technology. Physics working groups covered topics on Sterile Neutrinos, Neutrino Mixing, Neutrino Interactions, Neutrino Properties and Astrophysical Neutrinos. Technology sessions were organized into Theory, Short-Baseline Accelerator Neutrinos, Reactor Neutrinos, Detector R&D and Source, Cyclotron and Meson Decay at Rest sessions.This report summarizes discussion and conclusions from the workshop.

  4. Intermediate energy data

    International Nuclear Information System (INIS)

    Koning, A.J.; Fukahori, T.; Hasegawa, A.

    1998-01-01

    Subgroup 13 (SG13) on Intermediate Energy Nuclear data was formed by NEA Nuclear Science Committee to solve common problems of these types of data for nuclear applications. An overview is presented in this final report of the present activities of SG13, including data needs, high-priority nuclear data request list (nuclides), compilation of experimental data, specialists meetings and benchmarks, data formats and data libraries. Some important accomplishments are summarized, and recommendations are presented. (R.P.)

  5. Excitation of voltage oscillations in an induction voltage adder

    Directory of Open Access Journals (Sweden)

    Nichelle Bruner

    2009-07-01

    Full Text Available The induction voltage adder is an accelerator architecture used in recent designs of pulsed-power driven x-ray radiographic systems such as Sandia National Laboratories’ Radiographic Integrated Test Stand (RITS, the Atomic Weapons Establishment’s planned Hydrus Facility, and the Naval Research Laboratory’s Mercury. Each of these designs relies on magnetic insulation to prevent electron loss across the anode-cathode gap in the vicinity of the adder as well as in the coaxial transmission line. Particle-in-cell simulations of the RITS adder and transmission line show that, as magnetic insulation is being established during a pulse, some electron loss occurs across the gap. Sufficient delay in the cavity pulse timings provides an opportunity for high-momentum electrons to deeply penetrate the cavities of the adder cells where they can excite radio-frequency resonances. These oscillations may be amplified in subsequent gaps, resulting in oscillations in the output power. The specific modes supported by the RITS-6 accelerator and details of the mechanism by which they are excited are presented in this paper.

  6. Capturing power at higher voltages from arrays of microbial fuel cells without voltage reversal

    KAUST Repository

    Kim, Younggy

    2011-01-01

    Voltages produced by microbial fuel cells (MFCs) cannot be sustainably increased by linking them in series due to voltage reversal, which substantially reduces stack voltages. It was shown here that MFC voltages can be increased with continuous power production using an electronic circuit containing two sets of multiple capacitors that were alternately charged and discharged (every one second). Capacitors were charged in parallel by the MFCs, but linked in series while discharging to the circuit load (resistor). The parallel charging of the capacitors avoided voltage reversal, while discharging the capacitors in series produced up to 2.5 V with four capacitors. There were negligible energy losses in the circuit compared to 20-40% losses typically obtained with MFCs using DC-DC converters to increase voltage. Coulombic efficiencies were 67% when power was generated via four capacitors, compared to only 38% when individual MFCs were operated with a fixed resistance of 250 Ω. The maximum power produced using the capacitors was not adversely affected by variable performance of the MFCs, showing that power generation can be maintained even if individual MFCs perform differently. Longer capacitor charging and discharging cycles of up to 4 min maintained the average power but increased peak power by up to 2.6 times. These results show that capacitors can be used to easily obtain higher voltages from MFCs, allowing for more useful capture of energy from arrays of MFCs. © 2011 The Royal Society of Chemistry.

  7. Digital voltage discriminator

    International Nuclear Information System (INIS)

    Zhou Zhicheng

    1992-01-01

    A digital voltage discriminator is described, which is synthesized by digital comparator and ADC. The threshold is program controllable with high stability. Digital region of confusion is approximately equal to 1.5 LSB. This discriminator has a single channel analyzer function model with channel width of 1.5 LSB

  8. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  9. PLL strategies of grid connected converters under distorted input voltages

    Czech Academy of Sciences Publication Activity Database

    Šimek, Petr; Škramlík, Jiří; Valouch, Viktor

    2014-01-01

    Roč. 59, č. 1 (2014), s. 1-12 ISSN 0001-7043 Institutional support: RVO:61388998 Keywords : voltage source converter * grid - connected applications * phase locked loop Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  10. Understand electronics

    CERN Document Server

    Bishop, Owen

    2013-01-01

    Understand Electronics provides a readable introduction to the exciting world of electronics for the student or enthusiast with little previous knowledge. The subject is treated with the minimum of mathematics and the book is extensively illustrated.This is an essential guide for the newcomer to electronics, and replaces the author's best-selling Beginner's Guide to Electronics.The step-by-step approach makes this book ideal for introductory courses such as the Intermediate GNVQ.

  11. Voltage control of a power-frequency E-beam irradiator

    International Nuclear Information System (INIS)

    Zhou Zhizhong; Hu Shouming; Wang Jun; Guo Honglei; Su Haijun

    2012-01-01

    Voltage stability and precision are key specifications of an electron beam irradiator. A voltage control system was developed for smooth high voltage regulating on a power frequency electron accelerator. Pillar variac driven by servo motor was used as the regulating device, with a programmable logic controller as the control unit. An industrial PC was employed to realize human-machine interaction. Open-loop and closed-loop modes were employed to regulate the high voltage. Experimental results show that the speed, stability and precision for high voltage regulating were improved greatly, hence a much better performance of the electron accelerator. (authors)

  12. The intermediate state in Patd

    African Journals Online (AJOL)

    ) Jesus had assumed. (concerning the 'intermediate state') as existing, anything which does not exist. Three basic things about the intermediate state emerge from the parable: (a) Jesus recognizes that at the moment of death, in ipso articulo.

  13. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  14. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur

    2011-10-22

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

  15. [Intermediate energy nuclear physics

    International Nuclear Information System (INIS)

    1989-01-01

    This report summarizes work in experimental Intermediate Energy Nuclear Physics carried out between October 1, 1988 and October 1, 1989 at the Nuclear Physics Laboratory of the University of Colorado, Boulder, under grant DE-FG02-86ER-40269 with the United States Department of Energy. The experimental program is very broadly based, including pion-nucleon studies at TRIUMF, inelastic pion scattering and charge exchange reactions at LAMPF, and nucleon charge exchange at LAMPF/WNR. In addition, a number of other topics related to accelerator physics are described in this report

  16. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  17. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  18. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  19. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  20. Suppressing voltage transients in high voltage power supplies

    International Nuclear Information System (INIS)

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  1. Far from the intermediate nuclear field

    International Nuclear Information System (INIS)

    Dietrich, K.; Wagner, G.J.; Gregoire, C.; Campi, X.; Silvestre-Brac, B.; Platchkov, S.; Mayer, B.; Abgrall, Y.; Bohigas, O.; Grange, P.; Signarbieux, C.

    1988-01-01

    Pairing correlations in nuclear physics; the BCS state and quasi-particles; the layer model; collision effects on nuclear dynamics; the theory of cluster formation (application to nucleus fragmentation); short range correlations (few-particle systems); deuterium electron scattering; dibaryonic resonances; traditional and exotic hadron probes of nuclear structure; spectral fluctuations and chaotic motion; corrections to the intermediate nuclear field (nonrelativistic and other effects); and heavy nuclei splitting and nuclear superfluidity are introduced [fr

  2. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...

  3. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  4. Intermediate energy electromagnetic interactions

    International Nuclear Information System (INIS)

    Garcon, M.

    1994-11-01

    Polarization measurements in electromagnetic interactions are reviewed. Deep inelastic scattering of polarized electrons and muons an polarized targets, photoproduction of pseudoscalar mesons on protons, photonuclear reactions, and the electromagnetic structure of the deuteron are discussed. (K.A.)

  5. Intermediate energy electromagnetic interactions

    Energy Technology Data Exchange (ETDEWEB)

    Garcon, M.

    1994-11-01

    Polarization measurements in electromagnetic interactions are reviewed. Deep inelastic scattering of polarized electrons and muons an polarized targets, photoproduction of pseudoscalar mesons on protons, photonuclear reactions, and the electromagnetic structure of the deuteron are discussed. (K.A.).

  6. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  7. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

  8. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  9. Sensing voltage across lipid membranes

    Science.gov (United States)

    Swartz, Kenton J.

    2009-01-01

    The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925

  10. Hysteresis analysis of graphene transistor under repeated test and gate voltage stress

    International Nuclear Information System (INIS)

    Yang Jie; Jia Kunpeng; Su Yajuan; Zhao Chao; Chen Yang

    2014-01-01

    The current transport characteristic is studied systematically based on a back-gate graphene field effect transistor, under repeated test and gate voltage stress. The interface trapped charges caused by the gate voltage sweep process screens the gate electric field, and results in the neutral point voltage shift between the forth and back sweep direction. In the repeated test process, the neutral point voltage keeps increasing with test times in both forth and back sweeps, which indicates the existence of interface trapped electrons residual and accumulation. In gate voltage stress experiment, the relative neutral point voltage significantly decreases with the reducing of stress voltage, especially in −40 V, which illustrates the driven-out phenomenon of trapped electrons under negative voltage stress. (semiconductor devices)

  11. Electron-deficient N-alkyloyl derivatives of thieno[3,4-c]pyrrole-4,6-dione yield efficient polymer solar cells with open-circuit voltages > 1 v

    KAUST Repository

    Warnan, Julien; Cabanetos, Clement; Bude, Romain; El Labban, Abdulrahman; LI, LIANG; Beaujuge, Pierre

    2014-01-01

    Poly(benzo[1,2-b:4,5-b′]dithiophene-thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors yield some of the highest open-circuit voltages (V OC, ca. 0.9 V) and fill factors (FF, ca. 70%) in conventional bulk-heterojunction (BHJ) solar cells

  12. High voltage fast switches for nuclear applications

    International Nuclear Information System (INIS)

    Chatroux, D.; Lausenaz, Y.; Villard, J.F.; Lafore, D.

    1999-01-01

    SILVA process consists in a selective ionization of the 235 uranium isotope, using laser beams generated by dye lasers pumped by copper vapour laser (C.V.L.). SILVA involves power electronic for 3 power supplies: - copper vapour laser power supply, - extraction power supply to generate the electric field in the vapour, and - electron beam power supply for vapour generation. This article reviews the main switches that are proposed on the market or are on development and that could be used in SILVA power supplies. The SILVA technical requirements are: high power, high voltage and very short pulses (200 ns width). (A.C.)

  13. Self-Driven Bioelectrochemical Mineralization of Azobenzene by Coupling Cathodic Reduction with Anodic Intermediate Oxidation

    International Nuclear Information System (INIS)

    Liu, Rong-Hua; Li, Wen-Wei; Sheng, Guo-Ping; Tong, Zhong-Hua; Lam, Michael Hon-Wah; Yu, Han-Qing

    2015-01-01

    Highlights: • Azobenzene was reduced to aniline at the cathode of an acetate-fueled MFC. • Aniline was degraded at the bioanode of a single-chamber MFC. • Cathodic reduction of azobenzene was coupled with anodic oxidation of aniline. • Self-driven, complete mineralization of azobenzene in an MFC was accomplished. - Abstract: Bioelectrochemical systems have been intensively studied as a promising technology for wastewater treatment and environment remediation. Coupling of the anodic and cathodic electrochemical reactions allows an enhanced degradation of recalcitrant organics, but external power supply is usually needed to overcome the thermodynamic barrier. In this work, we report a self-driven degradation of azobenzene in a microbial fuel cell (MFC), where the cathodic reduction of azobenzene was effectively coupled with the anodic oxidation of its reduction degradation intermediate (i.e., aniline). The anodic degradation rate of aniline, as the sole carbon source, was significantly higher than that under open-circuit conditions, suggesting a considerable bioelectrochemical oxidation of aniline. Output voltages up to 8 mV were obtained in the MFC. However, a shift of cathodic electron acceptor from oxygen to azobenzene resulted in a decreased aniline degradation rate and output voltage. The present work may provide valuable implications for development of sustainable bioelectrochemical technologies for environmental remediation

  14. High-Current Plasma Electron Sources

    International Nuclear Information System (INIS)

    Gushenets, J.Z.; Krokhmal, V.A.; Krasik, Ya. E.; Felsteiner, J.; Gushenets, V.

    2002-01-01

    In this report we present the design, electrical schemes and preliminary results of a test of 4 different electron plasma cathodes operating under Kg h-voltage pulses in a vacuum diode. The first plasma cathode consists of 6 azimuthally symmetrically distributed arc guns and a hollow anode having an output window covered by a metal grid. Plasma formation is initiated by a surface discharge over a ceramic washer placed between a W-made cathode and an intermediate electrode. Further plasma expansion leads to a redistribution of the discharge between the W-cathode and the hollow anode. An accelerating pulse applied between the output anode grid and the collector extracts electrons from this plasma. The operation of another plasma cathode design is based on Penning discharge for preliminary plasma formation. The main glow discharge occurs between an intermediate electrode of the Penning gun and the hollow anode. To keep the background pressure in the accelerating gap at P S 2.5x10 4 Torr either differential pumping or a pulsed gas puff valve were used. The operation of the latter electron plasma source is based on a hollow cathode discharge. To achieve a sharp pressure gradient between the cathode cavity and the accelerating gap a pulsed gas puff valve was used. A specially designed ferroelectric plasma cathode initiated plasma formation inside the hollow cathode. This type of the hollow cathode discharge ignition allowed to achieve a discharge current of 1.2 kA at a background pressure of 2x10 4 Torr. All these cathodes were developed and initially tested inside a planar diode with a background pressure S 2x10 4 Torr under the same conditions: accelerating voltage 180 - 300 kV, pulse duration 200 - 400 ns, electron beam current - 1 - 1.5 kA, and cross-sectional area of the extracted electron beam 113 cm 2

  15. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  16. Experiments in intermediate energy physics

    International Nuclear Information System (INIS)

    Dehnhard, D.

    2003-01-01

    Research in experimental nuclear physics was done from 1979 to 2002 primarily at intermediate energy facilities that provide pion, proton, and kaon beams. Particularly successful has been the work at the Los Alamos Meson Physics Facility (LAMPF) on unraveling the neutron and proton contributions to nuclear ground state and transition densities. This work was done on a wide variety of nuclei and with great detail on the carbon, oxygen, and helium isotopes. Some of the investigations involved the use of polarized targets which allowed the extraction of information on the spin-dependent part of the triangle-nucleon interaction. At the Indiana University Cyclotron Facility (IUCF) we studied proton-induced charge exchange reactions with results of importance to astrophysics and the nuclear few-body problem. During the first few years, the analysis of heavy-ion nucleus scattering data that had been taken prior to 1979 was completed. During the last few years we created hypernuclei by use of a kaon beam at Brookhaven National Laboratory (BNL) and an electron beam at Jefferson Laboratory (JLab). The data taken at BNL for a study of the non-mesonic weak decay of the A particle in a nucleus are still under analysis by our collaborators. The work at JLab resulted in the best resolution hypernuclear spectra measured thus far with magnetic spectrometers

  17. Experiments in intermediate energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Dehnhard, D.

    2003-02-28

    Research in experimental nuclear physics was done from 1979 to 2002 primarily at intermediate energy facilities that provide pion, proton, and kaon beams. Particularly successful has been the work at the Los Alamos Meson Physics Facility (LAMPF) on unraveling the neutron and proton contributions to nuclear ground state and transition densities. This work was done on a wide variety of nuclei and with great detail on the carbon, oxygen, and helium isotopes. Some of the investigations involved the use of polarized targets which allowed the extraction of information on the spin-dependent part of the triangle-nucleon interaction. At the Indiana University Cyclotron Facility (IUCF) we studied proton-induced charge exchange reactions with results of importance to astrophysics and the nuclear few-body problem. During the first few years, the analysis of heavy-ion nucleus scattering data that had been taken prior to 1979 was completed. During the last few years we created hypernuclei by use of a kaon beam at Brookhaven National Laboratory (BNL) and an electron beam at Jefferson Laboratory (JLab). The data taken at BNL for a study of the non-mesonic weak decay of the A particle in a nucleus are still under analysis by our collaborators. The work at JLab resulted in the best resolution hypernuclear spectra measured thus far with magnetic spectrometers.

  18. Electronic emission and electron guns

    International Nuclear Information System (INIS)

    Roy, Amitava

    2010-01-01

    This paper reviews the process of electron emission from metal surface. Although electrons move freely in conductors like metals, they normally do not leave the metal without some manipulation. In fact, heating and bombardment are the two primary ways in which electrons are emitted through the use of a heating element behind the cathode (termed thermionic emission) or as a result of bombardment with a beam of electrons, ions, or metastable atoms (termed secondary emission). Another important emission mechanism called Explosive Electron Emission (EEE) is also often used in various High Voltage Pulse Power Systems to generate very high current (few hundreds of kA) pulsed electron beams. The electron gun is the device in that it shoots off a continuous (or pulsed) stream of electrons. A brief idea about the evolution of the electron gun components and their basis of functioning are also discussed. (author)

  19. Present status of intermediate band solar cell research

    International Nuclear Information System (INIS)

    Cuadra, L.; Marti, A.; Luque, A.

    2004-01-01

    The intermediate band solar cell is a theoretical concept with the potential for exceeding the performance of conventional single-gap solar cells. This novel photovoltaic converter bases its superior theoretical efficiency over single-gap solar cells by enhancing its photogenerated current, via the two-step absorption of sub-band gap photons, without reducing its output voltage. This is achieved through a material with an electrically isolated and partially filled intermediate band located within a higher forbidden gap. This material is commonly named intermediate band material. This paper centres on summarising the present status of intermediate band solar cell research. A number of attempts, which aim to implement the intermediate band concept, are being followed: the direct engineering of the intermediate band material, its implementation by means of quantum dots and the highly porous material approach. Among other sub-band gap absorbing proposals, there is a renewed interest on the impurity photovoltaic effect, the quantum well solar cells and the particularly promising proposal for the use of up- and down-converters

  20. Discourses and Models of Intermediality

    OpenAIRE

    Schröter, Jens

    2011-01-01

    In his article "Discourses and Models of Intermediality" Jens Schröter discusses the question as to what relations do different discourses pose between different "media." Schröter identifies four models of discourse: 1) synthetic intermediality: a "fusion" of different media to super-media, a model with roots in the Wagnerian concept of Gesamtkunstwerk with political connotations, 2) formal (or transmedial) intermediality: a concept based on formal structures not "specific" to one medium but ...

  1. Information acquisition and financial intermediation

    OpenAIRE

    Boyarchenko, Nina

    2012-01-01

    This paper considers the problem of information acquisition in an intermediated market, where the specialists have access to superior technology for acquiring information. These informational advantages of specialists relative to households lead to disagreement between the two groups, changing the shape of the intermediation-constrained region of the economy and increasing the frequency of periods when the intermediation constraint binds. Acquiring the additional information is, however, cost...

  2. Dual voltage power supply with 48 volt

    Energy Technology Data Exchange (ETDEWEB)

    Froeschl, Joachim; Proebstle, Hartmut; Sirch, Ottmar [BMW Group, Muenchen (Germany)

    2012-11-01

    Automotive electrics/electronics have just reached a period of tremendous change. High voltage systems for Hybrid, Plug-In Hybrid or Battery Electric Vehicles with high power electric motors, high energy accumulators and electric climate compressors will be introduced in order to achieve the challenging targets for CO{sub 2} emissions and energy efficiency and to anticipate the mobility of the future. Additionally, innovations and the continuous increase of functionality for comfort, safety, driver assistance and infotainment systems require more and more electrical power of the vehicle power supply at all. On the one hand side electrified vehicles will certainly achieve a significant market share, on the other hand side they will increase the pressure to conventional vehicles with combustion engines for fuel consumption and CO{sub 2} emissions. These vehicles will be enabled to keep their competitiveness by new functions and the optimization of their electric systems. A dual voltage power supply with 48 Volt and 12 Volt will be one of the key technologies to realize these requirements. The power capability of the existing 12 Volt power supply has reached its limits. Further potentials can only be admitted by the introduction of 48 Volt. For this reason the car manufacturers Audi, BMW, Daimler, Porsche and Volkswagen started very early on this item and developed a common specification of the new voltage range. Now, it is necessary to identify the probable systems at this voltage range and to start the developments. (orig.)

  3. Microdosimetry of intermediate energy neutrons in fast neutron fields

    International Nuclear Information System (INIS)

    Saion, E.B.; Watt, D.E.

    1988-01-01

    A coaxial double cylindrical proportional counter has been constructed for microdosimetry of intermediate energy neutrons in mixed fields. Details are given of the measured gas gain and resolution characteristics of the counter for a wide range of anode voltages. Event spectra due to intermediate neutrons in any desired energy band is achieved by an appropriate choice of thickness of the common dividing wall in the counter and by appropriate use of the coincidence, anticoincidence pulse counting arrangements. Calculated estimates indicate that the dose contribution by fast neutrons to the energy deposition events in the intermediate neutron range may be as large as 25%. Empirical procedures being investigated aim to determine the necessary corrections to be applied to the microdose distributions, with a precision of 10%. (author)

  4. Intermediate Temperature Fuel Cell Using Gypsum Based Electrolyte And Electrodes

    International Nuclear Information System (INIS)

    Suzuki, Satoshi; Nagai, Masayuki; Katagiri, Yuji

    2011-01-01

    The proton conductive electrolyte membrane and the electrodes for intermediate temperature fuel cell were made from the phosphoric acid treated gypsum as a proton conductor. The membrane and the electrodes were built into single cell and tested at intermediate temperature region. The power density of the fuel cell was 0.56 mW/cm -2 at 150 deg. C without any humidification and 1.38 mW/cm -2 at 150 deg. C, 5% relative humidity. The open circuit voltage of the cell was increased higher than 0.7 V when the electrodes were annealed at 150 deg. C, 5%R.H., however the reasons for this are still to be further investigated. The results show that the potential of the phosphoric acid treated gypsum for the intermediate temperature proton conductor.

  5. Damage Mechanism of High Voltage Solar Arrays and Electronic Equipment in the Plasma Environment%高压太阳能电池阵与电子设备在等离子体环境中的毁伤机理

    Institute of Scientific and Technical Information of China (English)

    施维; 郑步生; 刘少斌

    2015-01-01

    目的 通过研究高压太阳能电池阵与电子设备在等离子体环境中气体放电的毁伤机理,从而可运用于军事上的电子对抗、干扰及隐身技术.方法 通过分析气体放电的几种基本形式,研究太阳能电池阵和电子设备在等离子体射流或等离子体环境下可能发生的放电过程.结果 高压太阳能电池阵在等离子体环境下易产生电弧放电现象,而电子设备在此环境下的毁伤主要是通过内部充电与外部充电产生的.结论 在等离子体环境中,气体放电会对高压太阳能电池阵和电子设备产生严重的影响,可以利用这种影响对空间邻域的探索提供帮助.%Objective To research the damage mechanism of gas discharge of high voltage solar arrays and electronic equipment in the plasma environment in order to apply in electronic warfare, interference and military stealth technology. Methods By analysis of several basic forms of gas discharge, the discharge process of high voltage solar arrays and electronic equipment which may occur in the plasma jet or the plasma environment was researched. Results High voltage solar arrays were likely to generate arc discharge, and the damage of the electronic equipment was mainly caused by internal and external charging in this environment. Conclusion Gas discharge may have a serious effect on high voltage solar arrays and electronic equipment in the plasma environment. This effect may help to explore the spatial neighborhood.

  6. Control voltage and power fluctuations when connecting wind farms

    Science.gov (United States)

    Berinde, Ioan; Bǎlan, Horia; Oros Pop, Teodora Susana

    2015-12-01

    Voltage, frequency, active power and reactive power are very important parameters in terms of power quality. These parameters are followed when connecting any power plant, the more the connection of wind farms. Connecting wind farms to the electricity system must not cause interference outside the limits set by regulations. Modern solutions for fast and automatic voltage control and power fluctuations using electronic control systems of reactive power flows. FACTS (Flexible Alternating Current Transmision System) systems, established on the basis of power electronic circuits ensure control of electrical status quantities to achieve the necessary transfer of power to the power grid. FACTS devices can quickly control parameters and sizes of state power lines, such as impedance line voltages and phase angles of the voltages of the two ends of the line. Their use can lead to improvement in power system operation by increasing the transmission capacity of power lines, power flow control lines, improved static and transient stability reserve.

  7. Control voltage and power fluctuations when connecting wind farms

    International Nuclear Information System (INIS)

    Berinde, Ioan; Bălan, Horia; Oros, Teodora Susana

    2015-01-01

    Voltage, frequency, active power and reactive power are very important parameters in terms of power quality. These parameters are followed when connecting any power plant, the more the connection of wind farms. Connecting wind farms to the electricity system must not cause interference outside the limits set by regulations. Modern solutions for fast and automatic voltage control and power fluctuations using electronic control systems of reactive power flows. FACTS (Flexible Alternating Current Transmision System) systems, established on the basis of power electronic circuits ensure control of electrical status quantities to achieve the necessary transfer of power to the power grid. FACTS devices can quickly control parameters and sizes of state power lines, such as impedance line voltages and phase angles of the voltages of the two ends of the line. Their use can lead to improvement in power system operation by increasing the transmission capacity of power lines, power flow control lines, improved static and transient stability reserve

  8. New method for determining avalanche breakdown voltage of silicon photomultipliers

    International Nuclear Information System (INIS)

    Chirikov-Zorin, I.

    2017-01-01

    The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

  9. Control voltage and power fluctuations when connecting wind farms

    Energy Technology Data Exchange (ETDEWEB)

    Berinde, Ioan, E-mail: ioan-berinde@yahoo.com; Bălan, Horia, E-mail: hbalan@mail.utcluj.ro; Oros, Teodora Susana, E-mail: teodoraoros-87@yahoo.com [Technical University of Cluj-Napoca, Romania, Faculty of Electrical Engineering, Department of Power Engineering and Management (Romania)

    2015-12-23

    Voltage, frequency, active power and reactive power are very important parameters in terms of power quality. These parameters are followed when connecting any power plant, the more the connection of wind farms. Connecting wind farms to the electricity system must not cause interference outside the limits set by regulations. Modern solutions for fast and automatic voltage control and power fluctuations using electronic control systems of reactive power flows. FACTS (Flexible Alternating Current Transmision System) systems, established on the basis of power electronic circuits ensure control of electrical status quantities to achieve the necessary transfer of power to the power grid. FACTS devices can quickly control parameters and sizes of state power lines, such as impedance line voltages and phase angles of the voltages of the two ends of the line. Their use can lead to improvement in power system operation by increasing the transmission capacity of power lines, power flow control lines, improved static and transient stability reserve.

  10. High voltage isolation transformer

    Science.gov (United States)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  11. The MHD intermediate shock interaction with an intermediate wave: Are intermediate shocks physical?

    International Nuclear Information System (INIS)

    Wu, C.C.

    1988-01-01

    Contrary to the usual belief that MHD intermediate shocks are extraneous, the authors have recently shown by numerical solutions of dissipative MHD equations that intermediate shocks are admissible and can be formed through nonlinear steepening from a continuous wave. In this paper, he clarifies the differences between the conventional view and the results by studying the interaction of an MHD intermediate shock with an intermediate wave. The study reaffirms his results. In addition, the study shows that there exists a larger class of shocklike solutions in the time-dependent dissiaptive MHD equations than are given by the MHD Rankine-Hugoniot relations. it also suggests a mechanism for forming rotational discontinuities through the interaction of an intermediate shock with an intermediate wave. The results are of importance not only to the MHD shock theory but also to studies such as magnetic field reconnection models

  12. Performance, stability and operation voltage optimization of screen-printed aqueous supercapacitors.

    Science.gov (United States)

    Lehtimäki, Suvi; Railanmaa, Anna; Keskinen, Jari; Kujala, Manu; Tuukkanen, Sampo; Lupo, Donald

    2017-04-06

    Harvesting micropower energy from the ambient environment requires an intermediate energy storage, for which printed aqueous supercapacitors are well suited due to their low cost and environmental friendliness. In this work, a systematic study of a large set of devices is used to investigate the effect of process variability and operating voltage on the performance and stability of screen printed aqueous supercapacitors. The current collectors and active layers are printed with graphite and activated carbon inks, respectively, and aqueous NaCl used as the electrolyte. The devices are characterized through galvanostatic discharge measurements for quantitative determination of capacitance and equivalent series resistance (ESR), as well as impedance spectroscopy for a detailed study of the factors contributing to ESR. The capacitances are 200-360 mF and the ESRs 7.9-12.7 Ω, depending on the layer thicknesses. The ESR is found to be dominated by the resistance of the graphite current collectors and is compatible with applications in low-power distributed electronics. The effects of different operating voltages on the capacitance, leakage and aging rate of the supercapacitors are tested, and 1.0 V found to be the optimal choice for using the devices in energy harvesting applications.

  13. Contribution to high voltage matrix switches reliability

    International Nuclear Information System (INIS)

    Lausenaz, Yvan

    2000-01-01

    Nowadays, power electronic equipment requirements are important, concerning performances, quality and reliability. On the other hand, costs have to be reduced in order to satisfy the market rules. To provide cheap, reliability and performances, many standard components with mass production are developed. But the construction of specific products must be considered following these two different points: in one band you can produce specific components, with delay, over-cost problems and eventuality quality and reliability problems, in the other and you can use standard components in a adapted topologies. The CEA of Pierrelatte has adopted this last technique of power electronic conception for the development of these high voltage pulsed power converters. The technique consists in using standard components and to associate them in series and in parallel. The matrix constitutes high voltage macro-switch where electrical parameters are distributed between the synchronized components. This study deals with the reliability of these structures. It brings up the high reliability aspect of MOSFETs matrix associations. Thanks to several homemade test facilities, we obtained lots of data concerning the components we use. The understanding of defects propagation mechanisms in matrix structures has allowed us to put forwards the necessity of robust drive system, adapted clamping voltage protection, and careful geometrical construction. All these reliability considerations in matrix associations have notably allowed the construction of a new matrix structure regrouping all solutions insuring reliability. Reliable and robust, this product has already reaches the industrial stage. (author) [fr

  14. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

  15. Pulse-voltage fast generator

    International Nuclear Information System (INIS)

    Valeev, R.I.; Nikiforov, M.G.; Kharchenko, A.F.

    1988-01-01

    The design is described and the test results of a four-channel pulse-voltage generator with maximum output voltage 200 kV are presented. The measurement results of generator triggering time depending on the value and polarity of the triggering voltage pulse for different triggering circuits are presented. The tests have shown stable triggering of all four channels of the generator in the range up to 40 % from selfbreakdown voltage. The generator triggering delay in the given range is <25 ns, asynchronism in channel triggering is <±1 ns

  16. Welding. Performance Objectives. Intermediate Course.

    Science.gov (United States)

    Vincent, Kenneth

    Several intermediate performance objectives and corresponding criterion measures are listed for each of nine terminal objectives for an intermediate welding course. The materials were developed for a 36-week (3 hours daily) course designed to prepare the student for employment in the field of welding. Electric welding and specialized (TIG & MIG)…

  17. Intermediate structure and threshold phenomena

    International Nuclear Information System (INIS)

    Hategan, Cornel

    2004-01-01

    The Intermediate Structure, evidenced through microstructures of the neutron strength function, is reflected in open reaction channels as fluctuations in excitation function of nuclear threshold effects. The intermediate state supporting both neutron strength function and nuclear threshold effect is a micro-giant neutron threshold state. (author)

  18. Determination of the internal parameters of tc from the current-voltage characteristics

    International Nuclear Information System (INIS)

    Kaibyshev, V.Z.

    1986-01-01

    This paper proposes a method for determining the effective work function of a collector, the electron temperature, and the voltage drop in the interelectrode gap from the experimental vurrent-voltage characteristics (IVC). Analysis of the boundary conditions at the collector shows that as the emission from the collector increases the height of the potential jump retarding plasma electrons decrease

  19. Temporary over voltages in the high voltage networks

    International Nuclear Information System (INIS)

    Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

    2001-01-01

    The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

  20. High-voltage nanosecond pulse shaper

    International Nuclear Information System (INIS)

    Kapishnikov, N.K.; Muratov, V.M.; Shatanov, A.A.

    1987-01-01

    A high-voltage pulse shaper with an output of up to 250 kV, a base duration of ∼ 10 nsec, and a repetition frequency of 50 pulses/sec is described. The described high-voltage nanosecond pulse shaper is designed for one-orbit extraction of an electron beam from a betatron. A diagram of the pulse shaper, which employs a single-stage generator is shown. The shaping element is a low-inductance capacitor bank of series-parallel KVI-3 (2200 pF at 10 kV) or K15-10 (4700 pF at 31.5 kV) disk ceramic capacitors. Four capacitors are connected in parallel and up to 25 are connected in series

  1. Optimising electron microscopy experiment through electron optics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Kubo, Y. [CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse France (France); Hitachi High-Technologies Corporation, 882, Ichige, Hitachinaka, Ibaraki 312-8504 (Japan); Gatel, C.; Snoeck, E. [CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse France (France); Houdellier, F., E-mail: florent.houdellier@cemes.fr [CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse France (France)

    2017-04-15

    We developed a new type of electron trajectories simulation inside a complete model of a modern transmission electron microscope (TEM). Our model incorporates the precise and real design of each element constituting a TEM, i.e. the field emission (FE) cathode, the extraction optic and acceleration stages of a 300 kV cold field emission gun, the illumination lenses, the objective lens, the intermediate and projection lenses. Full trajectories can be computed using magnetically saturated or non-saturated round lenses, magnetic deflectors and even non-cylindrical symmetry elements like electrostatic biprism. This multi-scale model gathers nanometer size components (FE tip) with parts of meter length (illumination and projection systems). We demonstrate that non-trivial TEM experiments requiring specific and complex optical configurations can be simulated and optimized prior to any experiment using such model. We show that all the currents set in all optical elements of the simulated column can be implemented in the real column (I2TEM in CEMES) and used as starting alignment for the requested experiment. We argue that the combination of such complete electron trajectory simulations in the whole TEM column with automatic optimization of the microscope parameters for optimal experimental data (images, diffraction, spectra) allows drastically simplifying the implementation of complex experiments in TEM and will facilitate the development of advanced use of the electron microscope in the near future. - Highlights: • Using dedicated electron optics software, we calculate full electrons trajectories inside a modern transmission electron microscope. • We have determined how to deal with multi-scale electron optics elements like high voltage cold field emission source. • W • e have succeed to model both weak and strong magnetic lenses whether in saturated or unsaturated conditions as well as electrostatic biprism and magnetic deflectors. • We have applied this model

  2. Optimising electron microscopy experiment through electron optics simulation

    International Nuclear Information System (INIS)

    Kubo, Y.; Gatel, C.; Snoeck, E.; Houdellier, F.

    2017-01-01

    We developed a new type of electron trajectories simulation inside a complete model of a modern transmission electron microscope (TEM). Our model incorporates the precise and real design of each element constituting a TEM, i.e. the field emission (FE) cathode, the extraction optic and acceleration stages of a 300 kV cold field emission gun, the illumination lenses, the objective lens, the intermediate and projection lenses. Full trajectories can be computed using magnetically saturated or non-saturated round lenses, magnetic deflectors and even non-cylindrical symmetry elements like electrostatic biprism. This multi-scale model gathers nanometer size components (FE tip) with parts of meter length (illumination and projection systems). We demonstrate that non-trivial TEM experiments requiring specific and complex optical configurations can be simulated and optimized prior to any experiment using such model. We show that all the currents set in all optical elements of the simulated column can be implemented in the real column (I2TEM in CEMES) and used as starting alignment for the requested experiment. We argue that the combination of such complete electron trajectory simulations in the whole TEM column with automatic optimization of the microscope parameters for optimal experimental data (images, diffraction, spectra) allows drastically simplifying the implementation of complex experiments in TEM and will facilitate the development of advanced use of the electron microscope in the near future. - Highlights: • Using dedicated electron optics software, we calculate full electrons trajectories inside a modern transmission electron microscope. • We have determined how to deal with multi-scale electron optics elements like high voltage cold field emission source. • W • e have succeed to model both weak and strong magnetic lenses whether in saturated or unsaturated conditions as well as electrostatic biprism and magnetic deflectors. • We have applied this model

  3. Phase-wise enhanced voltage support from electric vehicles in a Danish low-voltage distribution grid

    DEFF Research Database (Denmark)

    Knezovic, Katarina; Marinelli, Mattia

    2016-01-01

    High deployment of electric vehicles (EVs) imposes great challenges for the distribution grids, especially in unbalanced systems with notable voltage variations which detrimentally affect security of supply. On the other hand, with development of Vehicle-to-Grid technology, EVs may be able...... to provide numerous services for grid support, e.g., voltage control. Implemented electronic equipment will allow them to exchange reactive power for autonomous voltage support without communicating with the distribution system operator or influencing the available active power for primary transportation...

  4. Intermediate neutron spectrum problems and the intermediate neutron spectrum experiment

    International Nuclear Information System (INIS)

    Jaegers, P.J.; Sanchez, R.G.

    1996-01-01

    Criticality benchmark data for intermediate energy spectrum systems does not exist. These systems are dominated by scattering and fission events induced by neutrons with energies between 1 eV and 1 MeV. Nuclear data uncertainties have been reported for such systems which can not be resolved without benchmark critical experiments. Intermediate energy spectrum systems have been proposed for the geological disposition of surplus fissile materials. Without the proper benchmarking of the nuclear data in the intermediate energy spectrum, adequate criticality safety margins can not be guaranteed. The Zeus critical experiment now under construction will provide this necessary benchmark data

  5. Computer controlled high voltage system

    Energy Technology Data Exchange (ETDEWEB)

    Kunov, B; Georgiev, G; Dimitrov, L [and others

    1996-12-31

    A multichannel computer controlled high-voltage power supply system is developed. The basic technical parameters of the system are: output voltage -100-3000 V, output current - 0-3 mA, maximum number of channels in one crate - 78. 3 refs.

  6. A Voltage Quality Detection Method

    DEFF Research Database (Denmark)

    Chen, Zhe; Wei, Mu

    2008-01-01

    This paper presents a voltage quality detection method based on a phase-locked loop (PLL) technique. The technique can detect the voltage magnitude and phase angle of each individual phase under both normal and fault power system conditions. The proposed method has the potential to evaluate various...

  7. All-Pass Filter Based Linear Voltage Controlled Quadrature Oscillator

    Directory of Open Access Journals (Sweden)

    Koushick Mathur

    2017-01-01

    Full Text Available A linear voltage controlled quadrature oscillator implemented from a first-order electronically tunable all-pass filter (ETAF is presented. The active element is commercially available current feedback amplifier (AD844 in conjunction with the relatively new Multiplication Mode Current Conveyor (MMCC device. Electronic tunability is obtained by the control node voltage (V of the MMCC. Effects of the device nonidealities, namely, the parasitic capacitors and the roll-off poles of the port-transfer ratios of the device, are shown to be negligible, even though the usable high-frequency ranges are constrained by these imperfections. Subsequently the filter is looped with an electronically tunable integrator (ETI to implement the quadrature oscillator (QO. Experimental responses on the voltage tunable phase of the filter and the linear-tuning law of the quadrature oscillator up to 9.9 MHz at low THD are verified by simulation and hardware tests.

  8. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Future power system is expected to be characterized by increased penetration of intermittent sources. Random and rapid fluctuations in demands together with intermittency in generation impose new challenges for power balancing in the existing system. Conventional techniques of balancing by large...... central or dispersed generations might not be sufficient for future scenario. One of the effective methods to cope with this scenario is to enable demand response. This paper proposes a dynamic voltage regulation based demand response technique to be applied in low voltage (LV) distribution feeders....... An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  9. Transient voltage oscillations in coils

    International Nuclear Information System (INIS)

    Chowdhuri, P.

    1985-01-01

    Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated

  10. Electronic ripple indicator

    Science.gov (United States)

    Davidson, J. K.; Houck, W. H.

    1971-01-01

    Electronic circuit for monitoring excessive ripple voltage on dc power lines senses voltage variations from few millivolts to maximum of 10 volts rms. Instrument is used wherever power supply fluctuations might endanger system operations or damage equipment. Device is inexpensive and easily packaged in small chassis.

  11. Time resolved laser induced fluorescence on argon intermediate pressure microwave discharges: Measuring the depopulation rates of the 4p and 5p excited levels as induced by electron and atom collisions

    Energy Technology Data Exchange (ETDEWEB)

    Palomares, J.M., E-mail: j.m.palomares-linares@tue.nl; Graef, W.A.A.D.; Hübner, S.; Mullen, J.J.A.M. van der, E-mail: jjamvandermullen@gmail.com

    2013-10-01

    The reaction kinetics in the excitation space of Ar is explored by means of Laser Induced Fluorescence (LIF) experiments using the combination of high rep-rate YAG–Dye laser systems with a well defined and easily controllable surfatron induced plasma setup. The high rep-rate favors the photon statistics while the low energy per pulse avoids intrusive plasma laser interactions. An analysis shows that, despite the low energy per pulse, saturation can still be achieved even when the geometrical overlap and spectral overlap are optimal. Out of the various studies that can be performed with this setup we confine the current paper to the study of the direct responses to the laser pump action of three 4p and one 5p levels of the Ar system. By changing the plasma in a controlled way one gets for these levels the rates of electron and atom quenching and therewith the total destruction rates of electron and atom collisions. Comparison with literature shows that the classical hard sphere collision rate derived for hydrogen gives a good description for the observed electron quenching (e-quenching) in Ar whereas for heavy particle quenching (a-quenching) this agreement was only found for the 5p level. An important parameter in the study of electron excitation kinetics is the location of the boundary in the atomic system for which the number of electron collisions per radiative life time equals unity. It is observed that for the Ar system this boundary is positioned lower than what is expected on grounds of H-like formulas. - Highlights: • Time resolved laser induced fluorescence at high repetition rate • Decay times as function of pressure, electron density and temperature • Measurement of total electron atom depopulation rates • Reasonable agreement of electron total rates with hard sphere approximations.

  12. High-voltage test and training of plastic streamer tubes for the DELPHI hadron calorimeter

    International Nuclear Information System (INIS)

    Alekseev, G.D.; Cellar, S.; Khomenko, B.A.; Korytov, A.V.; Kulinich, P.A.; Micelmacher, G.V.; Sedykh, Yu.V.; Toledo, R.

    1987-01-01

    The results of high-voltage test and training of plastic streamer tubes of the DELPHI hadron calorimeter are presented. The testing technique is considered in detail. The equipment for high-voltage training consists of a mini-computer, CAMAC-electronics, a controllable high-voltage supply and a digital ampermeter. The experimental results shows that high-voltage training of streamer tubes improves their characteristics. The value of dark current decreased up to 1 μA. The operational voltage range increased by a value more than 300 V

  13. On the theory of non-self-maintained low voltage arc discharge

    International Nuclear Information System (INIS)

    Shcherbinin, P.P.; Cherednichenko, Yu.G.

    1980-01-01

    In the approximation of constant temperature of plasma electrons for two emitter temperatures 1440 and 1830 K calculated are the volt-ampere characteristics and components of the voltage internal drop in a thermionic converter in the cases of self-maintained discharge in cesium and with an external source of atom ionization and electron heating. It is obtained, that using an external ionization source the decrease of voltage drop in the interelectrode gap with account of ionization energy constitutes about 0.1 V. Electron heating is not effective. For further reduction of voltage losses it is necessary to search for ways for decreasing electron Coulomb scattering on ions

  14. Intermediate Levels of Visual Processing

    National Research Council Canada - National Science Library

    Nakayama, Ken

    1998-01-01

    ...) surface representation, here we have shown that there is an intermediate level of visual processing, between the analysis of the image and higher order representations related to specific objects; (2...

  15. Evaluation of the practical peak voltage quantity for clinical equipment in diagnostic radiology

    International Nuclear Information System (INIS)

    Pires, Joao dos Santos Justo

    2007-01-01

    The objective of this work is to evaluate the calculation of the Practical Peak Voltage (PPV) from the voltage waveform and the kerma contrast for two kinds of X-ray equipment: a single phase clinical equipment, a three phase clinical equipment. The PPV from a mammography system voltage waveform will also be established. The development of this work involves intermediate objectives that indicate the quality of the used methods to calculate the PPV. One of these intermediate objectives is the comparison between the invasive calculations of PPV (using a voltage divider) with the response of kVp meter that calculate the PPV. Another intermediate objective is to compare the PPV with the Contrast Equivalent Voltage (the original non-invasive PPV definition). The variation of the PPV with quantities that influence in the voltage waveform like ripple and sample rate will also be contemplated in this work. The results showed that the PPV quantity could be invasive determined trustworthy. Therefore, the ripple quantity is the mainly influence to determinate the PPV that affecting the non-invasive determination. This fact suggest that the non-invasive instruments manufacturers must reevaluate the calculation of the PPV quantity in their instruments. (author)

  16. Voltage Mode Universal Biquad Using CCCII

    Directory of Open Access Journals (Sweden)

    Ashish Ranjan

    2011-01-01

    Full Text Available This paper proposes a multi-input single-output (MISO second-order active-C voltage mode (VM universal filter using two second-generation current-controlled current conveyors (CCCIIs and two equal-valued capacitors. The proposed circuit realizes low pass, band pass, high pass, all pass, and notch responses from the same topology. The filter uses-minimum number of passive components and no resistor which is suitable for IC Design. The filter enjoys low-sensitivity performance and exhibits electronic and orthogonal tunability of pole frequency (0 and quality factor (0 via bias current of CCCIIs. PSPICE simulation results confirm the theory.

  17. LOFT voltage insertion calibaration program

    International Nuclear Information System (INIS)

    Tillitt, D.N.; Miyasaki, F.S.

    1975-08-01

    The Loss-of-Fluid Test (LOFT) Facility is an experimental facility built around a ''scaled'' version of a large pressurized water reactor (LPWR). Part of this facility is the Data Acquisition and Visual Display System (DAVDS) as defined by the LOFT System Design Document SDD 1.4.2C. The DAVDS has a 702 data channel recording capability of which 548 are recorded digitally. The DAVDS also contains a Voltage Insertion Calibration Subsystem used to inject precise and known voltage steps into the recording systems. The computer program that controls the Voltage Insertion Calibration Subsystem is presented. 7 references. (auth)

  18. Power-MOSFET Voltage Regulator

    Science.gov (United States)

    Miller, W. N.; Gray, O. E.

    1982-01-01

    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  19. Induced voltage due to time-dependent magnetisation textures

    International Nuclear Information System (INIS)

    Kudtarkar, Santosh Kumar; Dhadwal, Renu

    2010-01-01

    We determine the induced voltage generated by spatial and temporal magnetisation textures (inhomogeneities) in metallic ferromagnets due to the spin diffusion of non-equilibrium electrons. Using time dependent semi-classical theory as formulated in Zhang and Li and the drift-diffusion model of transport it is shown that the voltage generated depends critically on the difference in the diffusion constants of up and down spins. Including spin relaxation results in a crucial contribution to the induced voltage. We also show that the presence of magnetisation textures results in the modification of the conductivity of the system. As an illustration, we calculate the voltage generated due to a time dependent field driven helimagnet by solving the Landau-Lifshitz equation with Gilbert damping and explicitly calculate the dependence on the relaxation and damping parameters.

  20. ORELA electron guns

    International Nuclear Information System (INIS)

    Christian, O.W.; Lewis, T.A.

    1981-09-01

    The most recent information concerning the production and performance of ORELA electron guns is presented. Included are descriptions of procedures for gun fabrication, cathode conditioning and high voltage processing. Highlights of the performance characteristics are also included

  1. Localized conductive patterning via focused electron beam reduction of graphene oxide

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Songkil; Henry, Mathias [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Kulkarni, Dhaval D.; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Fedorov, Andrei G., E-mail: agf@gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Parker H. Petit Institute for Bioengineering and Bioscience, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2015-03-30

    We report on a method for “direct-write” conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

  2. Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

    Science.gov (United States)

    Cai, Yuanji; Guan, Yonggang; Liu, Weidong

    2017-06-01

    Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

  3. Thyristor current-pulse generator for betatron electromagnet with independent low-voltage supply

    International Nuclear Information System (INIS)

    Baginskii, B.A.; Makarevich, V.N.; Shtein, M.M.

    1989-01-01

    A thyristor generator is described that produces unipolar current pulses in the winding of a betatron electromagnet. The voltage on the electro-magnet is increased and the shape of the current pulses is improved by use of an intermediate inductive storage device. The current pulses have a duration of 11 msec, an amplitude of 190 A, and a repetition frequency of 50 Hz. The maximum magnetic-field energy is 450 J, the voltage on the electromagnet winding is 1.5 kV, and the supply voltage is 27 V

  4. Investigation on a Novel Discontinuous Pulse-Width Modulation Algorithm for Single-phase Voltage Source Rectifier

    DEFF Research Database (Denmark)

    Qu, Hao; Yang, Xijun; Guo, Yougui

    2014-01-01

    Single-phase voltage source converter (VSC) is an important power electronic converter (PEC), including single-phase voltage source inverter (VSI), single-phase voltage source rectifier (VSR), single-phase active power filter (APF) and single-phase grid-connection inverter (GCI). Single-phase VSC...

  5. Equilibrium fluctuation relations for voltage coupling in membrane proteins.

    Science.gov (United States)

    Kim, Ilsoo; Warshel, Arieh

    2015-11-01

    energy barrier that follow the trend of the equilibrium fluctuation relation and the Marcus theory of electron transfer. These energetics also allow for a direct estimation of the voltage dependence of channel activation (Q-V curve), offering a quantitative rationale for a correlation between the voltage dependence parabolas and the Q-V curve, upon site-directed mutagenesis or drug binding. Taken together, by introducing the voltage coupling as the energy gap reaction coordinate, our framework brings new perspectives to the thermodynamic models of voltage activation in voltage-sensitive membrane proteins, offering an a framework for a better understating of the structure-function correlations of voltage gating in ion channels as well as electrogenic phenomena in ion pumps and transporters. Significantly, this formulation also provides a powerful bridge between the CG model of voltage coupling and the conventional macroscopic treatments. Copyright © 2015 Elsevier B.V. All rights reserved.

  6. Time resolved laser induced fluorescence on argon intermediate pressure microwave discharges: Measuring the depopulation rates of the 4p and 5p excited levels as induced by electron and atom collisions

    Science.gov (United States)

    Palomares, J. M.; Graef, W. A. A. D.; Hübner, S.; van der Mullen, J. J. A. M.

    2013-10-01

    The reaction kinetics in the excitation space of Ar is explored by means of Laser Induced Fluorescence (LIF) experiments using the combination of high rep-rate YAG-Dye laser systems with a well defined and easily controllable surfatron induced plasma setup. The high rep-rate favors the photon statistics while the low energy per pulse avoids intrusive plasma laser interactions. An analysis shows that, despite the low energy per pulse, saturation can still be achieved even when the geometrical overlap and spectral overlap are optimal. Out of the various studies that can be performed with this setup we confine the current paper to the study of the direct responses to the laser pump action of three 4p and one 5p levels of the Ar system. By changing the plasma in a controlled way one gets for these levels the rates of electron and atom quenching and therewith the total destruction rates of electron and atom collisions. Comparison with literature shows that the classical hard sphere collision rate derived for hydrogen gives a good description for the observed electron quenching (e-quenching) in Ar whereas for heavy particle quenching (a-quenching) this agreement was only found for the 5p level. An important parameter in the study of electron excitation kinetics is the location of the boundary in the atomic system for which the number of electron collisions per radiative life time equals unity. It is observed that for the Ar system this boundary is positioned lower than what is expected on grounds of H-like formulas.

  7. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W; Silverstein, Brian L [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  8. High voltage distributions in RPCs

    International Nuclear Information System (INIS)

    Inoue, Y.; Muranishi, Y.; Nakamura, M.; Nakano, E.; Takahashi, T.; Teramoto, Y.

    1996-01-01

    High voltage distributions on the inner surfaces of RPCs electrodes were calculated by using a two-dimensional resistor network model. The calculated result shows that the surface resistivity of the electrodes should be high, compared to their volume resistivity, to get a uniform high voltage over the surface. Our model predicts that the rate capabilities of RPCs should be inversely proportional to the thickness of the electrodes if the ratio of surface-to-volume resistivity is low. (orig.)

  9. Intermediate stage of sleep and acute cerveau isolé preparation in the rat.

    Science.gov (United States)

    User, P; Gioanni, H; Gottesmann, C

    1980-01-01

    The acute cerveau isole rat shows spindle bursts of large amplitude alternating with low voltage activity in the frontal cortex and continuous theta rhythm in the dorsal hippocampus. These patterns closely resemble an "intermediate" stage of sleep-waking cycle, when the forebrain structures seem to be functionally disconnected from the brainstem.

  10. Modification of Modulating Anode Voltage Supply of Klystron for PEFP 20 MeV Linac

    International Nuclear Information System (INIS)

    Kim, Dae Il; Kwon, Hyeok Jung; Kim, Han Sung; Cho, Yong Sub

    2011-01-01

    The klystron (TH2089F, THALES) for PEFP 20MeV proton linear accelerator has a triode type electron gun and the modulating anode voltage should be supplied. The klystron has gone through some modification in the modulating anode voltage supply circuit. Formerly, the mod-anode voltage was supplied by using the tetrode-controlled voltage divider. This system requires addition power supply for the tetrode and the grid control circuit. Recently we modified the mod-anode supply from the tetrode-controlled voltage divider to a resistive voltage divider. The resistors for the previous voltage divider were installed at a supporter with high voltage bushing structure next to the klystron. In the previous system, the resistors were exposed to the air and their size was very bulky, length of which was about 1m long. To reduce the space occupied by the voltage divider and to improve the electrical insulation performance, the voltage dividing resistors were moved into the oil tank of the klystron. During the operation of the 20 MeV linac, the klystron parameters were measured. In this paper, the modification of the voltage divider and the operational characteristics of the klystron with modified voltage divider circuit are presented

  11. Reactions of stabilized Criegee Intermediates

    Science.gov (United States)

    Vereecken, Luc; Harder, Hartwig; Novelli, Anna

    2014-05-01

    Carbonyl oxides (Criegee intermediates) were proposed as key intermediates in the gas phase ozonolysis of alkenes in 1975 by Rudolf Criegee. Despite the importance of ozonolysis in atmospheric chemistry, direct observation of these intermediates remained elusive, with only indirect experimental evidence for their role in the oxidation of hydrocarbons, e.g. through scavenging experiments. Direct experimental observation of stabilized CI has only been achieved since 2008. Since then, a concerted effort using experimental and theoretical means is in motion to characterize the chemistry and kinetics of these reactive intermediates. We present the results of theoretical investigations of the chemistry of Criegee intermediates with a series of coreactants which may be of importance in the atmosphere, in experimental setups, or both. This includes the CI+CI cross-reaction, which proceeds with a rate coefficient near the collision limit and can be important in experimental conditions. The CI + alkene reactions show strong dependence of the rate coefficient depending on the coreactants, but is generally found to be rather slow. The CI + ozone reaction is sufficiently fast to occur both in experiment and the free troposphere, and acts as a sink for CI. The reaction of CI with hydroperoxides, ROOH, is complex, and leads both to the formation of oligomers, as to the formation of reactive etheroxides, with a moderately fast rate coefficient. The importance of these reactions is placed in the context of the reaction conditions in different atmospheric environments ranging from unpolluted to highly polluted.

  12. First high-voltage measurements using Ca{sup +} ions at the ALIVE experiment

    Energy Technology Data Exchange (ETDEWEB)

    König, K., E-mail: kkoenig@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Geppert, Ch. [Universität Mainz, Institut für Kernchemie (Germany); Krämer, J.; Maaß, B. [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Otten, E. W. [Universität Mainz, Institut für Physik (Germany); Ratajczyk, T.; Nörtershäuser, W. [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

    2017-11-15

    Many physics experiments depend on accurate high-voltage measurements to determine for example the exact retardation potential of an electron spectrometer as in the KATRIN experiment or the acceleration voltage of the ions at ISOL facilities. Until now only precision high-voltage dividers can be used to measure voltages up to 65 kV with an accuracy of 1 ppm. However, these dividers need frequent calibration and cross-checking and the direct traceability is not given. In this article we will describe the status of an experiment which aims to measure high voltages using collinear laser spectroscopy and which has the potential to provide a high-voltage standard and hence, a calibration source for precision high-voltage dividers on the 1 ppm level.

  13. Search for intermediate vector bosons

    International Nuclear Information System (INIS)

    Cline, D.B.; Rubbia, C.; van der Meer, S.

    1982-01-01

    Over the past 15 years a new class of unified theories has been developed to describe the forces acting between elementary particles. The most successful of the new theories establishes a link between electromagnetism and the weak force. A crucial prediction of this unified electroweak theory is the existence of three massive particles called intermediate vector bosons. If these intermediate vector bosons exist and if they have properties attributed to them by electroweak theory, they should soon be detected, as the world's first particle accelerator with enough energy to create such particles has recently been completed at the European Organization for Nuclear Research (CERN) in Geneva. The accelerator has been converted to a colliding beam machine in which protons and antiprotons collide head on. According to electroweak theory, intermediate vector bosons can be created in proton-antiproton collisions. (SC)

  14. Search for intermediate vector bosons

    International Nuclear Information System (INIS)

    Klajn, D.B.; Rubbia, K.; Meer, S.

    1983-01-01

    Problem of registration and search for intermediate vector bosons is discussed. According to weak-current theory there are three intermediate vector bosons with +1(W + )-1(W - ) and zero (Z 0 ) electric charges. It was suggested to conduct the investigation into particles in 1976 by cline, Rubbia and Makintair using proton-antiproton beams. Major difficulties of the experiment are related to the necessity of formation of sufficient amount of antiparticles and the method of antiproton beam ''cooling'' for the purpose of reduction of its random movements. The stochastic method was suggested by van der Meer in 1968 as one of possible cooling methods. Several large detectors were designed for searching intermediate vector bosons

  15. Gravity with Intermediate Goods Trade

    Directory of Open Access Journals (Sweden)

    Sujin Jang

    2017-12-01

    Full Text Available This paper derives the gravity equation with intermediate goods trade. We extend a standard monopolistic competition model to incorporate intermediate goods trade, and show that the gravity equation with intermediates trade is identical to the one without it except in that gross output should be used as the output measure instead of value added. We also show that the output elasticity of trade is significantly underestimated when value added is used as the output measure. This implies that with the conventional gravity equation, the contribution of output growth can be substantially underestimated and the role of trade costs reduction can be exaggerated in explaining trade expansion, as we demonstrate for the case of Korea's trade growth between 1995 and 2007.

  16. Harmonics and voltage stability analysis in power systems including

    Indian Academy of Sciences (India)

    In this study, non-sinusoidal quantities and voltage stability, both known as power quality criteria, are examined together in detail. The widespread use of power electronics elements cause the existence of significant non-sinusoidal quantities in the system. These non-sinusoidal quantities can create serious harmonic ...

  17. Voltage Balance of Separate DC Capacitors for CSAPF

    Czech Academy of Sciences Publication Activity Database

    You, X.; Geng, W.; Valouch, Viktor

    2005-01-01

    Roč. 50, č. 1 (2005), s. 23-33 ISSN 0001-7043 R&D Projects: GA AV ČR(CZ) IAA2057301 Institutional research plan: CEZ:AV0Z20570509 Keywords : cascade shunt active filter * voltage balance * control strategy Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  18. Mitigation of Flicker using STATCOM with Three-Level 12-pulse Voltage Source Inverter

    OpenAIRE

    Ali Z a'fari

    2011-01-01

    Voltage flicker is a disturbance in electrical power systems. The reason for this disturbance is mainly the large nonlinear loads such as electric arc furnaces. Synchronous static compensator (STATCOM) is considered as a proper technique to mitigate the voltage flicker. Application of more suitable and precise power electronic converter leads to a more precise performance of the compensator. In this paper a three-level 12-pulse voltage source inverter (VSI) with a 12-term...

  19. Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

    International Nuclear Information System (INIS)

    Kim, N.; Cheong, Y.; Song, W.

    2010-01-01

    We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

  20. Polarization phenomena in electromagnetic interactions at intermediate energies

    International Nuclear Information System (INIS)

    Burkert, V.

    1990-01-01

    Recent results of polarization measurements in electromagnetic interactions at intermediate energies are discussed. Prospects of polarization experiments at the new CW electron accelerators, as well as on upgraded older machines are outlined. It is concluded that polarization experiments will play a very important role in the study of the structure of the nucleon and of light nuclei. 72 refs