Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

Science.gov (United States)

Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

2016-02-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

International Nuclear Information System (INIS)

Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

2015-01-01

We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

International Nuclear Information System (INIS)

Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

2016-01-01

We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode. - Highlights: • The buffer layer surface morphology changes upon annealing of the buffer layer. • The coercivity decreases while the saturation magnetization and the effective anisotropy increase with the annealing of the buffer layer. • The reversal process changes from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation when annealing the buffer layer.

Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

International Nuclear Information System (INIS)

Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian; Luo, Yi-Min

2011-01-01

This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AlN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200-600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. - Research highlights: → An AlN nanocolumnar buffer layer prepared by oblique-angle (OA) deposition. → GaN-based LED structures were grown on a sapphire substrate with an AlN nanocolumnar buffer layer. → The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm.

A novel intermediate layer for Au/CdZnTe/FTO photoconductive structure

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yuelu; Wang, Linjun, E-mail: ljwang@shu.edu.cn; Xu, Run; Huang, Jian; Tao, Jun; Meng, Hua; Zhang, Jijun; Min, Jiahua

2016-12-01

Highlights: • Graphene layer was spin-coated on CdZnTe to form Au/graphene/CdZnTe/FTO structure. • Graphene layer can significantly improve the contact property of Au/CdZnTe. • Graphene layer can obviously enhance UV photo-response of CdZnTe. • Graphene is a potential buffer material for CdZnTe based high-energy detectors. - Abstract: In this work, graphene is tried to use to improve the performance of polycrystalline CdZnTe high-energy radiation and photon detectors. A graphene intermediate layer is prepared by spin-coating process on the surface of polycrystalline CdZnTe film, which forms a photoconductive Au/graphene/CdZnTe/FTO structure. XRD, Raman, photoelectric response and other characterisation methods are adopted to investigate the effect of graphene layer on the electrical characteristics and UV photo-response performance of CdZnTe photoconductive structure. It is demonstrated that graphene layer can significantly improve the contact property of Au/CdZnTe structure, and obviously enhance its UV photo-response and the UV sensitivity increased with one order of magnitude.

The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

International Nuclear Information System (INIS)

Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

2013-01-01

The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

Buffer layer investigations on MFIS capacitors consisting of ferroelectric poly[vinylidene fluoride trifluoroethylene

International Nuclear Information System (INIS)

Henkel, K; Seime, B; Paloumpa, I; Mueller, K; Schmeisser, D

2010-01-01

In this paper we present capacitance-voltage (CV) measurements on metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE] as ferroelectric layer and SiO 2 , Al 2 O 3 and HfO 2 as buffering insulator layer. In order to discuss our data in a quantitative manner we perform fits to the data based on a model proposed by Miller and McWorther. The improvement of the polarization values and subsequently its effect on the hysteresis of the CV curve by the successive shrinking of the buffer layer thickness and the following choice of a high-k buffer material is demonstrated. Our data underline that a saturated polarization of P[VDF/TrFE] cannot be controlled with a SiO 2 buffer layer and the insertion of a high-k buffer layer is essential for further improvements of the characteristics of MFIS stacks.

Dynamic power scaling of an intermediate symbol buffer associated with covariance computations

NARCIS (Netherlands)

2014-01-01

An intermediate symbol buffer (ISB) configuration and method is provided such that the ISB memory comprises 15 portions, one for each HSDPA spreading code. Symbols associated with a spreading code are written to the memory portion associated with the same spreading code. When a covariance

Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer

Energy Technology Data Exchange (ETDEWEB)

Su, Shui-Hsiang, E-mail: shsu@isu.edu.tw; Wu, Chung-Ming; Kung, Shu-Yi; Yokoyama, Meiso

2013-06-01

Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V{sub 2}O{sub 5}, 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V{sub 2}O{sub 5} films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of − 40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V{sub 2}O{sub 5} buffer layer at a V{sub GS} of − 60 V. The on/off current ratio reaches 2 × 10{sup 5}, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer. - Highlights: • A buffer layer enhances the performance of organic thin-film transistors (OTFTs). • The buffer layer consists of organic-doped inorganic material. • Interface dipole is weakened at the active layer/electrodes interface of OTFTs.

Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

International Nuclear Information System (INIS)

Arslan, Engin; Ozbay, Ekmel; Ozturk, Mustafa K; Ozcelik, Suleyman; Teke, Ali

2008-01-01

We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties of GaN layers. A series of GaN layers were grown on Si(1 1 1) with different buffer layers and buffer thicknesses and were characterized by Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction (XRD) and photoluminescence (PL) measurements. We first discuss the optimization of the LT-AlN/HT-AlN/Si(1 1 1) templates and then the optimization of the graded AlGaN intermediate layers. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.6 μm. The XRD and PL measurements results confirmed that a wurtzite GaN was successfully grown. The resulting GaN film surfaces were flat, mirror-like and crack-free. The mosaic structure in the GaN layers was investigated. With a combination of Williamson-Hall measurements and the fitting of twist angles, it was found that the buffer thickness determines the lateral coherence length, vertical coherence length, as well as the tilt and twist of the mosaic blocks in GaN films. The PL spectra at 8 K show that a strong band edge photoluminescence of GaN on Si (1 1 1) emits light at an energy of 3.449 eV with a full width at half maximum (FWHM) of approximately 16 meV. At room temperature, the peak position and FWHM of this emission become 3.390 eV and 58 meV, respectively. The origin of this peak was attributed to the neutral donor bound exciton. It was found that the optimized total thickness of the AlN and graded AlGaN layers played a very important role in the improvement of quality and in turn reduced the cracks during the growth of GaN/Si(1 1 1) epitaxial layers

Numerical simulation of solar cells besed CZTS buffer layer (ZnO 1 ...

African Journals Online (AJOL)

Cds buffer layer has many advantages such as large bandgap, and the carrier density. Otherwise, the presence of cadmium is an inconvenient. Research work, are shifted on the possibility of replacing CdS by a buffer layer devoid of cadmium. This manuscript presents the numerical study, using SCAPS-1D program, the ...

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

International Nuclear Information System (INIS)

Valdueza-Felip, S.; Ibáñez, J.; Monroy, E.; González-Herráez, M.; Artús, L.; Naranjo, F.B.

2012-01-01

We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∼ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∼ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: ► Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. ► Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. ► Room-temperature photoluminescence emission at 1.58 eV. ► InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, S., E-mail: sirona.valdueza@depeca.uah.es [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Ibanez, J. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Gonzalez-Herraez, M. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Artus, L. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Naranjo, F.B. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain)

2012-01-31

We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of {approx} 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at {approx} 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: Black-Right-Pointing-Pointer Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. Black-Right-Pointing-Pointer Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. Black-Right-Pointing-Pointer Room-temperature photoluminescence emission at 1.58 eV. Black-Right-Pointing-Pointer InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

Crystallinity Improvement of Zn O Thin Film on Different Buffer Layers Grown by MBE

International Nuclear Information System (INIS)

Shao-Ying, T.; Che-Hao, L.; Wen-Ming, Ch.; Yang, C.C.; Po-Ju, Ch.; Hsiang-Chen, W.; Ya-Ping, H.

2012-01-01

The material and optical properties of Zn O thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the Zn O layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality Zn O thin film growth. A Ga N buffer layer slightly increased the quality of the Zn O thin film, but the threading dislocations still stretched along the c-axis of the Ga N layer. The use of Mg O as the buffer layer decreased the surface roughness of the Zn O thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality Zn O thin film growth.

Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

Directory of Open Access Journals (Sweden)

Shao-Ying Ting

2012-01-01

Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

OPTIMISATION OF BUFFER SIZE FOR ENHANCING QOS OF VIDEO TRAFFIC USING CROSS LAYERED HYBRID TRANSPORT LAYER PROTOCOL APPROACH

Directory of Open Access Journals (Sweden)

S. Matilda

2011-03-01

Full Text Available Video streaming is gaining importance, with the wide popularity of multimedia rich applications in the Internet. Video streams are delay sensitive and require seamless flow for continuous visualization. Properly designed buffers offer a solution to queuing delay. The diagonally opposite QoS metrics associated with video traffic poses an optimization problem, in the design of buffers. This paper is a continuation of our previous work [1] and deals with the design of buffers. It aims at finding the optimum buffer size for enhancing QoS offered to video traffic. Network-centric QoS provisioning approach, along with hybrid transport layer protocol approach is adopted, to arrive at an optimum size which is independent of RTT. In this combinational approach, buffers of routers and end devices are designed to satisfy the various QoS parameters at the transport layer. OPNET Modeler is used to simulate environments for testing the design. Based on the results of simulation it is evident that the hybrid transport layer protocol approach is best suited for transmitting video traffic as it supports the economical design.

Study of shallow trench isolation technology with a poly-Si sidewall buffer layer

International Nuclear Information System (INIS)

Juang, M H; Chen, C L; Jang, S L

2008-01-01

Shallow trench isolation (STI) technology with a poly-Si buffer layer at the trench sidewall has been studied. At the densification temperature of 950 °C, for the samples without using a poly-Si buffer layer, the resulting junction shows a leakage of about 700 nA cm −2 for a diode area of 100 × 100 µm 2 , primarily due to large peripheral junction leakage. The large leakage is ascribed to the defect generation caused by a thermally induced stress near the trench sidewall. The usage of a poly-Si buffer layer in the trench sidewall is found to significantly improve the junction characteristics. As a result, when a 40 nm poly-Si buffer layer is sandwiched between the Si substrate and the trench-fill silicon oxide, the resultant junctions show a leakage of only about 8 nA cm −2 . This result may reflect the considerably reduced thermally induced stress near the trench sidewall. Furthermore, at the densification temperature of 1100 °C, the usage of a poly-Si buffer layer can help to achieve excellent junctions with a leakage smaller than 5 nA cm −2 for a diode area of 100 × 100 µm 2

Analysis of influence of buffer layers on microwave propagation through high-temperature superconducting thin films

International Nuclear Information System (INIS)

Ceremuga, J.; Barton, M.; Miranda, F.

1994-01-01

Methods of analysis of microwave propagation through superconducting thin films with buffer layers on dielectric substrates have been discussed. Expressions describing the transmission coefficient S 21 through the structure and the complex conductivity sigma of a superconductor in an analytical form have been derived. The derived equations are valid for microwave propagation in waveguides as well as in free space with relevant definition of impedances. Using the obtained solutions, the influences of buffer layers' parameters (thickness, relative permittivity and loss tangent) on the transmission coefficient has been investigated using MATLAB. Simulations have been performed for 10 GHz transmission through YBa 2 Cu 3 O 7 films on sapphire with SrTiO 3 and CeO 2 buffer layers and on silicon with CaF 2 and YSZ buffer layers. To illustrate the simulations, measurements of the transmission through YBCO film on sapphire with SrTiO 3 buffer layer have been performed. It has been shown that even lossy buffer layers have very little impact (smaller than 1% in magnitude and 0.3% in phase) on the transmission coefficient through superconducting thin films, providing their thickness is below 10 mu m. (author)

Effects of Anodic Buffer Layer in Top-Illuminated Organic Solar Cell with Silver Electrodes

Directory of Open Access Journals (Sweden)

Tien-Lung Chiu

2013-01-01

Full Text Available An efficient ITO-free top-illuminated organic photovoltaic (TOPV based on small molecular planar heterojunction was achieved by spinning a buffer layer of poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate (PEDOT:PSS, on the Ag-AgOx anode. The PEDOT:PSS thin film separates the active layer far from the Ag anode to prevent metal quenching and redistributes the strong internal optical field toward dissociated interface. The thickness and morphology of this anodic buffer layer are the key factors in determining device performances. The uniform buffer layer contributes a large short-circuit current and open-circuit voltage, benefiting the final power conversion efficiency (PCE. The TOPV device with an optimal PEDOT:PSS thickness of about 30 nm on Ag-AgOx anode exhibits the maximum PCE of 1.49%. It appreciates a 1.37-fold enhancement in PCE over that of TOPV device without buffer layer.

Buffer layer between a planar optical concentrator and a solar cell

Energy Technology Data Exchange (ETDEWEB)

Solano, Manuel E. [Departamento de Ingeniería Matemática and CI" 2 MA, Universidad de Concepción, Concepción, Casilla 160-C (Chile); Barber, Greg D. [Penn State Institute of Energy and the Environment, Pennsylvania State University, University Park, PA 16802 (United States); Department of Chemistry, Pennsylvania State University, University Park, PA 16802 (United States); Lakhtakia, Akhlesh [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802 (United States); Faryad, Muhammad [Department of Physics, Lahore University of Management Sciences, Lahore 54792 (Pakistan); Monk, Peter B. [Department of Mathematical Sciences, University of Delaware, Newark, DE 19716 (United States); Mallouk, Thomas E. [Department of Chemistry, Pennsylvania State University, University Park, PA 16802 (United States)

2015-09-15

The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

Double-layered buffer to enhance the thermal performance in a high-level radioactive waste disposal system

International Nuclear Information System (INIS)

Choi, Heui-Joo; Choi, Jongwon

2008-01-01

A thermal performance is one of the most important factors in the design of a geological disposal system for high-level radioactive wastes. According to the conceptual design of the Korean Reference disposal System, the maximum temperature of its buffer with a domestic Ca-bentonite is close to the thermal criterion, 100 deg. C. In order to improve the thermal conductivity of its buffer, several kinds of additives are compared. Among the additives, graphite shows the best result in that the thermal conductivity of the bentonite block is more than 2.0 W/m deg. C. We introduced the concept of a double-layered buffer instead of a traditional bentonite block in order to use the applied additive more effectively. The thermal analysis, based upon the three-dimensional finite element method, shows that a double-layered buffer could reduce the maximum temperature on a canister's surface by 7 deg. C under identical conditions when compared with a single-layered buffer. An analytical solution was derived to efficiently analyze the effects of a double-layered buffer. The illustrative cases show that the temperature differences due to a double-layered buffer depend on the thickness of the buffer

A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2013-11-01

Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

Improvement of the crystallographic orientation of double-layered perpendicular recording media by using CoCr (Mo)/Cu intermediate layers

International Nuclear Information System (INIS)

Tamai, Ichiro; Yamamoto, T.; Kikukawa, A.; Tanahashi, K.; Ishikawa, A.; Futamoto, M.

2001-01-01

We have introduced intermediate layers of CoCr/Cu and CoCrMo/Cu between a CoCrPtB recording layer and a soft-magnetic CoTaZr underlayer. The combination of the FCC-Cu first-intermediate layer and the HCP-CoCrMo second-intermediate layer was found to enhance the c-axis vertical orientation of the CoCrPtB recording layer. In media with intermediate layers of CoCrMo/Cu, the thickness of the intermediate layers can be reduced without sacrificing good magnetic properties, and this leads to high resolutions

Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

Directory of Open Access Journals (Sweden)

Wei-Chun Chen

2012-01-01

Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

Efficient small-molecule organic solar cells incorporating a doped buffer layer

Energy Technology Data Exchange (ETDEWEB)

Chou, Dei-Wei [Department of aviation and Communication Electronics, Air Force Institute of Technology, Kaohsiung 820, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung 831, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Nanzih, Kaohsiung 811, Taiwan (China); Tsao, Yao-Jen [Department of Applied Physics, National University of Kaohsiung, Nanzih, Kaohsiung 811, Taiwan (China); Chen, Wen-Ray; Meen, Teen-Hang [Department of Electronic Engineering, National Formosa University, Hu-Wei, Yunlin 632, Taiwan (China)

2013-06-01

Small-molecule organic solar cells (OSCs) with an optimized structure of indium tin oxide/poly (3,4-ethylenedioxythioxythiophene):poly(styrenesulfonate)/copper phthalocyanine (CuPc) (10 nm)/CuPc: fullerene (C{sub 60}) mixed (20 nm)/C{sub 60} (20 nm)/4,7-diphenyl-1,10-phenanthroline (BPhen) (5 nm)/Ag were fabricated. In this study, the cesium carbonate-doped BPhen (Cs{sub 2}CO{sub 3}:BPhen) was adopted as the buffer layer to enhance the efficiency of the OSCs. The photovoltaic parameters of the OSCs, such as the short-circuit current density and fill factor, depend on the doping concentration of Cs{sub 2}CO{sub 3} in the BPhen layer. The cell with a Cs{sub 2}CO{sub 3}:BPhen (1:4) cathode buffer layer exhibits a power conversion efficiency (PCE) of 3.51%, compared to 3.37% for the device with the pristine BPhen layer. The enhancement of PCE was attributed to the energy-level alignment between the C{sub 60} layer and the Cs{sub 2}CO{sub 3}:BPhen layer. In addition, the characterization measured using atomic force microscopy shows that the Cs{sub 2}CO{sub 3}:BPhen layers have smoother surfaces. - Highlight: • Cs2CO3-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) cathode buffer layer. • Cs2CO3:BPhen layer with different ratios affects organic solar cells performance. • Cell with 1:4 (Cs2CO3:BPhen) ratio shows 3.51% power conversion efficiency.

Influence of a ZnO Buffer Layer on the Structural, Optical, and Electrical Properties of ITO/ZnO Bi-Layered Films

International Nuclear Information System (INIS)

Heo, Sung-Bo; Moon, Hyun-Joo; Kim, Daeil; Kim, Jun-Ho

2016-01-01

Sn-doped indium oxide (ITO) films and ITO/ZnO bi-layered films were prepared on polycarbonate substrates by RF magnetron sputtering without intentional substrate heating. In order to consider the influence of the ZnO thickness on the structural, optical, and electrical properties of ITO/ZnO films, the thickness of the ZnO buffer layer was varied from 5 to 20 nm. As-deposited ITO films show an average optical transmittance of 79.2% in the visible range and an electrical resistivity of 3.0×10"-"4 Ωcm, while films with a 5-nm thick ZnO buffer layer film show an electrical resistivity of 2.6×10"-"4 Ωcm and films with a 20-nm thick ZnO buffer layer show an optical transmittance of 82.0%. Based on the figure of merit, it is concluded that the ZnO buffer layer enhances the optical and electrical performance of ITO films used as transparent conducting oxides in flexible display applications.

Layer-based buffer aware rate adaptation design for SHVC video streaming

Science.gov (United States)

Gudumasu, Srinivas; Hamza, Ahmed; Asbun, Eduardo; He, Yong; Ye, Yan

2016-09-01

This paper proposes a layer based buffer aware rate adaptation design which is able to avoid abrupt video quality fluctuation, reduce re-buffering latency and improve bandwidth utilization when compared to a conventional simulcast based adaptive streaming system. The proposed adaptation design schedules DASH segment requests based on the estimated bandwidth, dependencies among video layers and layer buffer fullness. Scalable HEVC video coding is the latest state-of-art video coding technique that can alleviate various issues caused by simulcast based adaptive video streaming. With scalable coded video streams, the video is encoded once into a number of layers representing different qualities and/or resolutions: a base layer (BL) and one or more enhancement layers (EL), each incrementally enhancing the quality of the lower layers. Such layer based coding structure allows fine granularity rate adaptation for the video streaming applications. Two video streaming use cases are presented in this paper. The first use case is to stream HD SHVC video over a wireless network where available bandwidth varies, and the performance comparison between proposed layer-based streaming approach and conventional simulcast streaming approach is provided. The second use case is to stream 4K/UHD SHVC video over a hybrid access network that consists of a 5G millimeter wave high-speed wireless link and a conventional wired or WiFi network. The simulation results verify that the proposed layer based rate adaptation approach is able to utilize the bandwidth more efficiently. As a result, a more consistent viewing experience with higher quality video content and minimal video quality fluctuations can be presented to the user.

The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

Energy Technology Data Exchange (ETDEWEB)

Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); Nozaki, Takayuki; Zayets, Vadym; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Suzuki, Yoshishige [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

2016-08-28

The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes in the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.

Effect of Cu buffer layer on magnetic anisotropy of cobalt thin films deposited on MgO(001 substrate

Directory of Open Access Journals (Sweden)

Syed Sheraz Ahmad

2016-11-01

Full Text Available Cobalt thin films with 5 nm thickness were prepared on single-crystal MgO (001 substrates with different thickness Cu buffer (0 nm, 5 nm, 10 nm, 20 nm. The structure, magnetic properties and transport behaviors were investigated by employing low-energy-electron-diffraction (LEED, magneto-optical Kerr effect (MOKE and anisotropic magnetoresistance (AMR. By comparing the magnetic properties of the sample as-deposited (without Cu buffer layer one with those having the buffer Cu, we found that the magnetic anisotropy was extremely affected by the Cu buffer layer. The magnetic anisotropy of the as-deposited, without buffer layer, sample shows the uniaxial magnetic anisotropy (UMA. We found that the symmetry of the magnetic anisotropy is changed from UMA to four-fold when the thickness of the Cu buffer layer reaches to 20 nm. Meanwhile, the coercivity increased from 49 Oe (without buffer layer to 300 Oe (with 20 nm Cu buffer, in the easy axis direction, as the thickness of the buffer layer increases. Moreover, the magnitudes of various magnetic anisotropy constants were determined from torque curves on the basis of AMR results. These results support the phenomenon shown in the MOKE.

Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Lordi, Vincenzo [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2016-09-30

The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enabling R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.

Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

Science.gov (United States)

Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

2015-08-01

Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively.

Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

Energy Technology Data Exchange (ETDEWEB)

Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

2013-11-01

We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

Effects of buffer layer temperature on the magnetic properties of NdFeB thin film magnets

International Nuclear Information System (INIS)

Kim, Y.B.; Cho, S.H.; Kim, H.T.; Ryu, K.S.; Lee, S.H.; Lee, K.H.; Kapustin, G.A.

2004-01-01

Effects of the buffer layer temperature (T b ) on the magnetic properties and microstructure of [Mo/NdFeB/Mo]-type thin films have been investigated. The Mo-buffer layer with low T b is composed of fine grains while that with high T b has coarse grains. The subsequent NdFeB layer also grows with fine or coarse grains following the buffer layer structure. The NdFeB layer grown on a low T b buffer shows high coercivity and strong perpendicular anisotropy. The best magnetic properties of i H c =1.01 MA/m (12.7 kOe), B r =1.31 T (13.1 kG) and BH max =329 kJ/m 3 (41.4 MGOe) were obtained from the film with T b =400 deg. C

Buffer layers grown by replicating the texture of an original template tape

International Nuclear Information System (INIS)

Lim, Sunme; Yoo, Jaeun; Park, Chan; Youm, Dojun

2007-01-01

We propose a fabrication method of the buffer layers, whose biaxial textures are replicated from an original template tape. The purpose of this method is economical texturing process for coated conductors. At first we prepared a biaxially textured metal tape (TM-tape). Then a sacrifice layer (SA), a buffer layer (BU) and a thick metallic layer (SM) were sequentially deposited on the TM-tape. SA-layer and BU-layer were deposited epitaxially to copy the texture of the TM-tape. SA-layer was dissoluble in water. SM-layer with the textured BU-layer was separated and could be used for a supporting tape for the further growth of a superconducting layer. In this way, it is possible to reuse the original textured TM-tape many times. In this paper, we report the results of our experiments, in which we used a biaxially Ni tape, BaO film, STO film, and a thick Ag film for TM-tape, SA-layer, BU-layer, and SM-layer, respectively. The Ag/STO layers were successfully separated form the Ni tape by dissolving the BaO layer in water. The texture quality of the STO layer was well secured after the separation

Non-Toxic Buffer Layers in Flexible Cu(In,GaSe2 Photovoltaic Cell Applications with Optimized Absorber Thickness

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-01-01

Full Text Available Absorber layer thickness gradient in Cu(In1−xGaxSe2 (CIGS based solar cells and several substitutes for typical cadmium sulfide (CdS buffer layers, such as ZnS, ZnO, ZnS(O,OH, Zn1−xSnxOy (ZTO, ZnSe, and In2S3, have been analyzed by a device emulation program and tool (ADEPT 2.1 to determine optimum efficiency. As a reference type, the CIGS cell with CdS buffer provides a theoretical efficiency of 23.23% when the optimum absorber layer thickness was determined as 1.6 μm. It is also observed that this highly efficient CIGS cell would have an absorber layer thickness between 1 μm and 2 μm whereas the optimum buffer layer thickness would be within the range of 0.04–0.06 μm. Among all the cells with various buffer layers, the best energy conversion efficiency of 24.62% has been achieved for the ZnO buffer layer based cell. The simulation results with ZnS and ZnO based buffer layer materials instead of using CdS indicate that the cell performance would be better than that of the CdS buffer layer based cell. Although the cells with ZnS(O,OH, ZTO, ZnSe, and In2S3 buffer layers provide slightly lower efficiencies than that of the CdS buffer based cell, the use of these materials would not be deleterious for the environment because of their non-carcinogenic and non-toxic nature.

Conductive and robust nitride buffer layers on biaxially textured substrates

Science.gov (United States)

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

Organic field-effect transistors with surface modification by using a PVK buffer layer on flexible substrates

Energy Technology Data Exchange (ETDEWEB)

Hyung, Gun Woo; Lee, Dong Hyung; Koo, Ja Ryong; Kim, Young Kwan [Hongik University, Seoul (Korea, Republic of); Park, Jae Hoon [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

2012-11-15

We have fabricated pentacene thin-film transistors (TFTs) with a gate dielectric such as crosslinked poly(vinyl alcohol) (c-PVA), with poly(9-vinylcarbazole) (PVK) buffer layer on a polyethersulfone (PES) flexible substrate, and with substrate heating at a temperature below 120 .deg. C, and we demonstrated the possibility of using an organic gate dielectric layer as a potential pentacene TFT with a PVK buffer layer for low-voltage operation on a plastic substrate. We report the excellent electrical properties of organic TFTs with a PVK buffer layer. The PVK buffer layer improves the performance of the devices and reduces the operating voltage of the devices. Our pentacene TFTs can be fabricated with mobilities > 2.54 cm{sup 2}/Vs and on/off current ratios > 7.5E5 and with flexible organic dielectrics and substrates.

Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

International Nuclear Information System (INIS)

Park, Dong Jun; Kim, Dong Chan; Lee, Jeong Yong; Cho, Hyung Koun

2006-01-01

The growth direction and morphology of one-dimensional ZnO nanostructures grown by metal-organic chemical vapour deposition (MOCVD) were modulated by changing the growth temperature of previously deposited ZnO buffer layers that were used as a template. The ZnO nanorods grown on the low-temperature deposited buffer layer were regularly inclined with respect to the substrate surface and show in-plane alignment with azimuthally six-fold symmetry. In contrast, deposition of the buffer layer at higher growth temperature led to the formation of vertically well-aligned ZnO nanorods. In addition, the ZnO nanorods grown on the buffer layer deposited at low growth temperature show a growth direction of [1 0 1-bar 0], unlike the conventional ZnO nanorods showing a growth direction of [0001]. The microstructural analysis and atomic modelling of the formation of regularly inclined nanorods using transmission electron microscopy are presented

The function of buffer layer in resistive switching device.

Czech Academy of Sciences Publication Activity Database

Zhang, B.; Prokop, V.; Střižík, L.; Zima, Vítězslav; Kutálek, P.; Vlček, Milan; Wágner, T.

2017-01-01

Roč. 14, č. 8 (2017), s. 291-295 ISSN 1584-8663 Institutional support: RVO:61389013 Keywords : resistive switching * chalcogenide glasses * buffer layer Subject RIV: CA - Inorganic Chemistry Impact factor: 0.732, year: 2016 http://www.chalcogen.ro/291_ZhangB.pdf

High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

International Nuclear Information System (INIS)

Xu, Q.Y.; Wang, Z.M.; Shen, F.; Du, Y.W.; Zhang, Z.

2003-01-01

The anisotropic magnetoresistance (AMR) in permalloy Ni 81 Fe 19 film deposited on a 1.2 nm Co 33 Cr 67 buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni 81 Fe 19 film with and without Co 33 Cr 67 buffer layer. It was found that Co 33 Cr 67 buffer layer can induce good (1 1 1) texture, while without Co 33 Cr 67 buffer layer, Ni 81 Fe 19 film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni 81 Fe 19 film due to the formation of the large (1 1 1) textured grains in Ni 81 Fe 19 film with Co 33 Cr 67 buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni 81 Fe 19 film with Co 33 Cr 67 buffer layer, limit the enhancement of the AMR effect

Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

2015-07-01

GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

Efficient Polymer Solar Cells with Alcohol-Soluble Zirconium(IV Isopropoxide Cathode Buffer Layer

Directory of Open Access Journals (Sweden)

Zhen Luo

2018-02-01

Full Text Available Interfacial materials are essential to the performance and stability of polymer solar cells (PSCs. Herein, solution-processed zirconium(IV isopropoxide (Zr[OCH(CH32]4, ZrIPO has been employed as an efficient cathode buffer layer between the Al cathode and photoactive layer. The ZrIPO buffer layer is prepared simply via spin-coating its isopropanol solution on the photoactive layer at room temperature without any post-treatment. When using ZrIPO/Al instead of the traditionally used Ca/Al cathode in PSCs, the short-circuit current density (Jsc is significantly improved and the series resistance of the device is decreased. The power conversion efficiency (PCE of the P3HT:PCBM-based device with ZrIPO buffer layer reaches 4.47% under the illumination of AM1.5G, 100 mW/cm2. A better performance with PCE of 8.07% is achieved when a low bandgap polymer PBDTBDD is selected as donor material. The results indicate that ZrIPO is a promising electron collection material as a substitute of the traditional low-work-function cathode for high performance PSCs.

Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

Directory of Open Access Journals (Sweden)

Atsushi Sugihara

2015-06-01

Full Text Available Mn\\(_3\\Ge has a tetragonal Heusler-like D0\\(_{22}\\ crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn\\(_3\\Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn\\(_3\\Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn\\(_3\\Ge on Rh show somewhat small coercivity (\\(H_{\\rm c}\\ = 12.6 kOe and a large perpendicular magnetic anisotropy (\\(K_{\\rm u}\\ = 11.6 Merg/cm\\(^3\\, comparable to that of the film grown on Cr.

Simple solution-processed CuOX as anode buffer layer for efficient organic solar cells

International Nuclear Information System (INIS)

Shen, Wenfei; Yang, Chunpeng; Bao, Xichang; Sun, Liang; Wang, Ning; Tang, Jianguo; Chen, Weichao; Yang, Renqiang

2015-01-01

Graphical abstract: - Highlights: • Simple solution-processed CuO X hole transport layer for efficient organic solar cell. • Good photovoltaic performances as hole transport layer in OSCs with P3HT and PBDTTT-C as donor materials. • The device with CuO X as hole transport layer shows great improved stability compared with that of device with PEDOT:PSS as hole transport layer. - Abstract: A simple, solution-processed ultrathin CuO X anode buffer layer was fabricated for high performance organic solar cells (OSCs). XPS measurement demonstrated that the CuO X was the composite of CuO and Cu 2 O. The CuO X modified ITO glass exhibit a better surface contact with the active layer. The photovoltaic performance of the devices with CuO X layer was optimized by varying the thickness of CuO X films through changing solution concentration. With P3HT:PC 61 BM as the active layer, we demonstrated an enhanced PCE of 4.14% with CuO X anode buffer layer, compared with that of PEDOT:PSS layer. The CuO X layer also exhibits efficient photovoltaic performance in devices with PBDTTT-C:PC 71 BM as the active layer. The long-term stability of CuO X device is better than that of PEDOT:PSS device. The results indicate that the easy solution-processed CuO X film can act as an efficient anode buffer layer for high-efficiency OSCs

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

Science.gov (United States)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers

Science.gov (United States)

Itoh, Eiji; Sakai, Shota; Fukuda, Katsutoshi

2018-03-01

We studied the effects of a hole buffer layer [molybdenum oxide (MoO3) and natural copper oxide layer] and a low-temperature-processed electron buffer layer on the performance of inverted bulk-heterojunction organic solar cells in a device consisting of indium-tin oxide (ITO)/poly(ethylene imine) (PEI)/titanium oxide nanosheet (TiO-NS)/poly(3-hexylthiopnehe) (P3HT):phenyl-C61-butyric acid methylester (PCBM)/oxide/anode (Ag or Cu). The insertion of ultrathin TiO-NS (˜1 nm) and oxide hole buffer layers improved the open circuit voltage V OC, fill factor, and rectification properties owing to the effective hole blocking and electron transport properties of ultrathin TiO-NS, and to the enhanced work function difference between TiO-NS and the oxide hole buffer layer. The insertion of the TiO-NS contributed to the reduction in the potential barrier at the ITO/PEI/TiO-NS/active layer interface for electrons, and the insertion of the oxide hole buffer layer contributed to the reduction in the potential barrier for holes. The marked increase in the capacitance under positive biasing in the capacitance-voltage characteristics revealed that the combination of TiO-NS and MoO3 buffer layers contributes to the selective transport of electrons and holes, and blocks counter carriers at the active layer/oxide interface. The natural oxide layer of the copper electrode also acts as a hole buffer layer owing to the increase in the work function of the Cu surface in the inverted cells. The performance of the cell with evaporated MoO3 and Cu layers that were transfer-printed to the active layer was almost comparable to that of the cell with MoO3 and Ag layers directly evaporated onto the active layer. We also demonstrated comparable device performance in the cell with all-printed MoO3 and low-temperature-processed silver nanoparticles as an anode.

Effect of Coating Parameters of the Buffer Layer on the Shape Ratio of TRISO-Coated Particles

International Nuclear Information System (INIS)

KIm, Weon Ju; Park, Jong Hoon; Park, Ji Yeon; Lee, Young Woo; Chang, Jong Hwa

2005-01-01

Fuel for high temperature gas-cooled reactors (HTGR's) consists of TRISO-coated particles. Fluidized bed chemical vapor deposition (FBCVD) has been applied to fabricate the TRISO-coated fuel particles. The TRISO particles consist of UO 2 microspheres coated with layers of porous pyrolytic carbon (PyC), inner dense PyC (IPyC), SiC, and outer dense PyC (OPyC). The porous PyC coating layer, called the buffer layer, attenuates fission recoils and provides void volume for gaseous fission products and carbon monoxide. The buffer layer, which has the highest coating rate among the coating layers, shows the largest variation of the coating thickness within a particle and a batch. This could be the most plausible source of an asphericity in the TRISO particles. The aspherical particles are expected to have an inferior fuel performance. Miller et al. have predicted that a larger stress is developed within the coating layers and thus the failure probability increases in the particles with high aspect ratios. Therefore, the shape of the TRISO-coated particles should be controlled properly and has been one of the important inspection items for the quality control of the fabrication process. In this paper, we investigated the effect of coating parameters of the buffer layer on the shape of the TRISO particles. The flow rate of coating gas and the coating temperature were varied to control the buffer layer. The asphericity of the TRISO-coated particles was evaluated for the various coating conditions of the buffer layer, but at constant coating parameters for the IPyC/SiC/OPyC layers

Simulation studies on the effect of a buffer layer on the external ...

Indian Academy of Sciences (India)

Wintec

parameters of hydrogenated amorphous silicon p–i–n solar cells ... of a buffer layer in between the p- and i-layers of the p–i–n solar cell on the external parameters such as dark .... H 1988 Photovoltaic specialist conference, in Conference re-.

Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-02-01

ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

Multi-filamentary REBCO tapes fabricated by scratching a buffer layer along the tape longitudinal direction

Energy Technology Data Exchange (ETDEWEB)

Kurihara, Chihaya, E-mail: chihaya.kurihara@jp.fujikura.com [Fujikura Ltd., 1440, Mutsuzaki, Sakura, Chiba 285-8550 (Japan); Fujita, Shinji; Nakamura, Naonori; Igarashi, Mitsunori; Iijima, Yasuhiro [Fujikura Ltd., 1440, Mutsuzaki, Sakura, Chiba 285-8550 (Japan); Higashikawa, Kohei; Uetsuhara, Dai; Kiss, Takanobu; Iwakuma, Masataka [Kyushu University, 744 Motooka, Nishi-Ku, Fukuoka 819-0395 (Japan)

2016-11-15

Highlights: • We developed new method of slitting tape between buffer layer processes for multi-filamentary tape. • By scratching buffer layer along the tape longitudinal direction, we find that REBCO layer is divided easily without damaging it. • We have developed 100 m class multi-filamentary REBCO tapes which are suitable for superconducting coils. - Abstract: A method for making multi-filamentary REBCO tapes by only scratching buffer layer was developed for coil application which requires accurate magnetic fields. By continuous I{sub c} measurement, we found that our new multi-filamentary tape could provide almost equal I{sub c} compared to conventional tapes. Then, using EBSD and RTR-SHPM methods, a divided structure of REBCO layer was surely confirmed. AC loss was also decreased. Furthermore, the result of delamination test of our new multi-filamentary tape showed enough mechanical property. As a result, we have succeeded in developing 100 m class multi-filamentary tape for superconducting coil.

Multi-filamentary REBCO tapes fabricated by scratching a buffer layer along the tape longitudinal direction

International Nuclear Information System (INIS)

Kurihara, Chihaya; Fujita, Shinji; Nakamura, Naonori; Igarashi, Mitsunori; Iijima, Yasuhiro; Higashikawa, Kohei; Uetsuhara, Dai; Kiss, Takanobu; Iwakuma, Masataka

2016-01-01

Highlights: • We developed new method of slitting tape between buffer layer processes for multi-filamentary tape. • By scratching buffer layer along the tape longitudinal direction, we find that REBCO layer is divided easily without damaging it. • We have developed 100 m class multi-filamentary REBCO tapes which are suitable for superconducting coils. - Abstract: A method for making multi-filamentary REBCO tapes by only scratching buffer layer was developed for coil application which requires accurate magnetic fields. By continuous I_c measurement, we found that our new multi-filamentary tape could provide almost equal I_c compared to conventional tapes. Then, using EBSD and RTR-SHPM methods, a divided structure of REBCO layer was surely confirmed. AC loss was also decreased. Furthermore, the result of delamination test of our new multi-filamentary tape showed enough mechanical property. As a result, we have succeeded in developing 100 m class multi-filamentary tape for superconducting coil.

Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs(001)

International Nuclear Information System (INIS)

Jayavel, P.; Nakamura, S.; Koyama, T.; Hayakawa, Y.

2006-01-01

InAsSb ternary epilayers with arsenic composition of 0.5 have been grown on GaAs(001) substrates. Linear-graded and step-graded InAsSb buffer layers with an InSb layer have been used to relax lattice mismatch between the epilayer and substrate. X-ray diffraction results of the epilayers indicate that an enhancement in the peak intensity of the buffer layer samples is due to improved crystalline quality of the epilayers. We find that the growth technique of the buffer layer strongly influences the surface morphology and roughness of the epilayer. Hall effect measurements of the step-graded buffer layer samples show an order of magnitude higher electron mobility than the direct and linear-graded buffer layer samples. These results demonstrate that high crystalline quality and electron mobility of the InAs 0.5 Sb 0.5 ternary epilayers can be achieved by using the step-graded InAsSb buffer layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

International Nuclear Information System (INIS)

Wu, B.-R.; Liao, C.; Cheng, K. Y.

2008-01-01

High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer

International Nuclear Information System (INIS)

Pan Feng; Qian Xian-Rui; Huang Li-Zhen; Wang Hai-Bo; Yan Dong-Hang

2011-01-01

High-mobility vanadyl phthalocyanine (VOPc)/5,5‴-bis(4-fluorophenyl)-2,2':5',2″:5″,2‴-quaterthiophene (F2-P4T) thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine (F 16 CuPc)/copper phthalocyanine (CuPc) heterojunction unit, which are fabricated at different substrate temperatures, as a buffer layer. The highest mobility of 4.08cm 2 /Vs is achieved using a F 16 CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature. Compared with the random small grain-like morphology of the room-temperature buffer layer, the high-temperature organic heterojunction presents a large-sized fiber-like film morphology, resulting in an enhanced conductivity. Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained. (cross-disciplinary physics and related areas of science and technology)

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

International Nuclear Information System (INIS)

Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

2016-01-01

Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

Energy Technology Data Exchange (ETDEWEB)

Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Ma, Zhongquan, E-mail: zqma@shu.edu.cn [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Instrumental Analysis & Research Center, Shanghai University, Shanghai 200444 (China)

2016-12-01

Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

Buffer layers and articles for electronic devices

Science.gov (United States)

Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

2004-07-20

Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

Energy Technology Data Exchange (ETDEWEB)

Srinivas, S.; Bhatnagar, A.K. [Univ. of Hyderabad (India); Pinto, R. [Solid State Electronics Group, Bombay (India)] [and others

1994-12-31

Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si<100>, Sapphire and LaAlO{sub 3} <100> substrates. The effect of substrate temperatures upto 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar structure with variation growth conditions. The buffer layers of YSZ and STO showed orientation. The tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa{sub 2}Cu{sub 9}O{sub 7-x} (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

Antiferromagnetic iridium-manganese intermediate layers for perpendicular recording media (invited)

Science.gov (United States)

Srinivasan, Kumar; Piramanayagam, S. N.; Sbiaa, Rachid; Kay, Yew Seng; Tan, Hang Khume; Wong, Seng Kai

2009-04-01

Current generation of cobalt-oxide-based perpendicular magnetic recording media uses single or dual ruthenium intermediate layers in order to grow crystallographically textured, and magnetically isolated granular media. In this work, the potential advantages of an antiferromagnetic iridium-manganese intermediate layer directly under the recording layer are highlighted. Owing to its close lattice matching with hexagonal cobalt, iridium-manganese which has the L12, or AuCu3-type crystal structure, can support the heteroepitaxial growth of the cobalt-based recording layer. In one of the media schemes described here, (111) textured iridium-manganese thin film was grown on 7.5 nm thick ruthenium layer. On the iridium-manganese as segregation layer, the Co-oxide-based magnetic recording layer showed perpendicular texture with Δθ50 below 4°, coercivity of over 4000 Oe alongside magnetic exchange decoupling, average grain sizes of 6 nm with distributions under 14%, and improved thermal stability. Measurements of the anisotropy constant did not show any significant change and even an IrMn capping layer was observed to improve the thermal stability. The possible mechanisms through which the IrMn layer could affect the thermal stability are hypothesized. The initial layers of the magnetic recording layer on IrMn segregation layers also showed exchange-decoupled and segregated grains, which is unlike that observed on Ru segregation layers. In a second media scheme, (111) textured iridium-manganese thin film was grown on a crystalline soft magnetic underlayer belonging on top of amorphous soft underlayers. In this scheme, partial pinning of the soft underlayer due to exchange-bias interaction with the IrMn layer was observed. This scheme offers the possibility to reduce the intermediate layer thickness, thus improve media writability, and with further optimization, could potentially facilitate the approach toward 1 Tbits/in.2.

Optimization of the buffer layer of a side polished fiber slab coupler based on 3 D ADI beam propagation method

International Nuclear Information System (INIS)

Lee, Cherl Hee; Kim, Cheol; Park, Jae Hee

2008-01-01

A side polished fiber slab coupler has been widely applied to a sensor, which has the advantages of short response time, simple manufacturing process, and reusability as well as in line fiber component. A new type of a side polished fiber sensor providing remote sensing with an improved performance was also recently developed. The side polished fiber slab coupler is modeled as a fiber to planar waveguide coupler with four layers, including the fiber cladding, a buffer layer, planar waveguide and overlay material. The coupling effects by the buffer layer of a side polished fiber slab coupler are analyzed by using 3 dimensional alternating direction implicit (ADI)beam propagation method, where the refractive index and thickness of the buffer layer were tuned for efficient light coupling. The coupling is easily tuned and more occurred by the refractive index and thickness of the buffer layer for efficient coupling. This study tried to optimize the buffer layer parameters for achieving the desired light coupling and power transfer performance

Cooptimization of Adhesion and Power Conversion Efficiency of Organic Solar Cells by Controlling Surface Energy of Buffer Layers.

Science.gov (United States)

Lee, Inhwa; Noh, Jonghyeon; Lee, Jung-Yong; Kim, Taek-Soo

2017-10-25

Here, we demonstrate the cooptimization of the interfacial fracture energy and power conversion efficiency (PCE) of poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT)-based organic solar cells (OSCs) by surface treatments of the buffer layer. The investigated surface treatments of the buffer layer simultaneously changed the crack path and interfacial fracture energy of OSCs under mechanical stress and the work function of the buffer layer. To investigate the effects of surface treatments, the work of adhesion values were calculated and matched with the experimental results based on the Owens-Wendt model. Subsequently, we fabricated OSCs on surface-treated buffer layers. In particular, ZnO layers treated with poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) simultaneously satisfied the high mechanical reliability and PCE of OSCs by achieving high work of adhesion and optimized work function.

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

Energy Technology Data Exchange (ETDEWEB)

Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Zhonghua; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

2016-12-01

Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

International Nuclear Information System (INIS)

Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

2016-01-01

Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

International Nuclear Information System (INIS)

Liu Xiao Dong; Zhao Su-Ling; Xu Zheng; Zhang Fu-Jun; Zhang Tian-Hui; Gong Wei; Yan Guang; Kong Chao; Wang Yong-Sheng; Xu Xu-Rong

2011-01-01

In this work, bathocuproine (BCP) and bathophenanthroline (Bphen), commonly used in small-molecule organic solar cells (OSCs), are adopted as the buffer layers to improve the performance of the polymer solar cells (PSCs) based on poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV): [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-nm BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen (i) increasing the optical field, and hence the absorption in the active layer, (ii) effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum (Al) interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance (R s ), and (iii) preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode. (interdisciplinary physics and related areas of science and technology)

Cube textured CeO2, BaZrO3 and LaAlO3 buffer layers on Ni based Substrates

International Nuclear Information System (INIS)

Deinhofer, C; Gritzner, G

2006-01-01

CeO 2 , BaZrO 3 as well as LaAlO 3 buffer layers were deposited on {100} Ni + 5 weight-% W substrates by a wet chemical technique. The solutions were prepared by dissolving the metal nitrates or acetates and zirconiumacetylacetonate, respectively, in mixtures of acetic acid, methanol and water. The solutions were applied by dip- or spincoating, dried at 135 deg. C and annealed at temperatures between 900 and 1 400 deg. C depending on the buffer layer for 15 min. under Ar-5% H 2 gas flow. Pole-figure measurements proved the exact texture of each buffer layer. Electron microscopy showed dense and smooth buffer layers

Copper variation in Cu(In,Ga)Se{sub 2} solar cells with indium sulphide buffer layer

Energy Technology Data Exchange (ETDEWEB)

Spiering, S., E-mail: stefanie.spiering@zsw-bw.de [Zentrum für Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Wuerttemberg, Industriestrasse 6, 70565 Stuttgart (Germany); Paetel, S.; Kessler, F. [Zentrum für Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Wuerttemberg, Industriestrasse 6, 70565 Stuttgart (Germany); Igalson, M.; Abdel Maksoud, H. [Warsaw University of Technology (WUT), Faculty of Physics, Koszykowa 75, 00-662 Warszawa (Poland)

2015-05-01

In the manufacturing of Cu(In,Ga)Se{sub 2} (CIGS) thin film solar cells the application of a buffer layer on top of the absorber is essential to obtain high efficiency devices. Regarding the roll-to-roll production of CIGS cells and modules a vacuum deposition process for the buffer is preferable to the conventional cadmium sulphide buffer deposited in a chemical bath. Promising results have already been achieved for the deposition of indium sulphide buffer by different vacuum techniques. The solar device performance is very sensitive to the conditions at the absorber-buffer heterojunction. In view of optimization we investigated the influence of the Cu content in the absorber on the current-voltage characteristics. In this work the integral copper content was varied between 19 and 23 at.% in CIGS on glass substrates. An improvement of the cell performance by enhanced open circuit voltage was observed for a reduction to ~ 21 at.% when thermally evaporated indium sulphide was applied as the buffer layer. The influence of stoichiometry deviations on the transport mechanism and secondary barriers in the device was studied using detailed dark and light current-voltage analysis and admittance spectroscopy and compared to the reference CdS-buffered cells. We conclude that the composition of the absorber in the interface region affects current transport in In{sub x}S{sub y}-buffered and CdS-buffered cells in different ways hence optimal Cu content in those two types of devices is different. - Highlights: • Influence of Cu-variation in CIGS cells with In{sub x}S{sub y} buffer layer on cell performance • Enhanced efficiency by slight reduction of Cu-content to 21 at.% • Contribution of tunnelling-enhanced interface recombination for higher Cu-content.

Dependence of Magnetic Properties of Co/Pt Multilayers on Deposition Temperature of Pt Buffer Layers

Science.gov (United States)

Shiomi, Shigeru; Nishimura, Tomotaka; Kobayashi, Tadashi; Masuda, Morio

1993-04-01

A 15-nm-thick Pt buffer layer was deposited on a glass slide at temperature Ts(Ptbuf) ranging from 30 to 300°C by e-gun evaporation. Following the cooling in vacuum to ambient temperature, Co and Pt layers have been alternately deposited on it. Very large perpendicular anisotropy and coercivity have been obtained at Ts(Ptbuf) higher than 200°C. The (111) preferred orientation of the Co/Pt multilayer as well as the Pt buffer layer became more pronounced with elevating Ts(Ptbuf), to which the enhancement of perpendicular anisotropy with elevating Ts(Ptbuf) might be ascribable.

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Directory of Open Access Journals (Sweden)

Wei-Cheng Kuo

2016-01-01

Full Text Available We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD at low growth temperature (180°C. The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD and spectroscopy ellipsometry (SE. The full width at half maximum (FWHM of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

Investigation of CeO2 Buffer Layer Effects on the Voltage Response of YBCO Transition-Edge Bolometers

DEFF Research Database (Denmark)

Mohajeri, Roya; Nazifi, Rana; Wulff, Anders Christian

2016-01-01

The effect on the thermal parameters of superconducting transition-edge bolometers produced on a single crystalline SrTiO3 (STO) substrate with and without a CeO2 buffer layer was investigated. Metal-organic deposition was used to deposit the 20-nm CeO2 buffer layer, whereas RF magnetron sputtering...

Electrically conducting oxide buffer layers on biaxially textured nickel alloy tapes by reel-to-reel MOCVD process

International Nuclear Information System (INIS)

Stadel, O; Samoilenkov, S V; Muydinov, R Yu; Schmidt, J; Keune, H; Wahl, G; Gorbenko, O Yu; Korsakov, I E; Melnikov, O V; Kaul, A R

2006-01-01

Reel-to-reel MOCVD process for continuous growth of electrically conducting buffer layers on biaxially textured Ni5W tapes has been developed. The new buffer layer architechture is presented: 200 nm (La, Ba) 2 CuO 4 /40 nm (La, Ba)MnO 3 /Ni5W. Constituting layers with high structural quality have been grown on moving tapes (in plane FWHM ≤ 6 0 and out of plane FWHM ≤ 3 0 )

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

Science.gov (United States)

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

2015-05-26

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

A method of producing small grain Ru intermediate layers for perpendicular magnetic media

International Nuclear Information System (INIS)

Yuan Hua; Qin Yueling; Laughlin, David E.

2008-01-01

NiAl + SiO 2 thin films were used as a grain size reducing seedlayer for cobalt alloy granular perpendicular magnetic recording media. The effect of this NiAl + SiO 2 seedlayer on the microstructure and crystalline orientation of Ru intermediate layer has been investigated. By co-sputtering the composite NiAl + SiO 2 seedlayer, the smallest average grain diameter of NiAl was significantly reduced to about 2.5 nm. The grain size of the subsequent Ru intermediate layer was reduced to about 4 nm. X-ray diffraction results indicate an epitaxial orientation relationship of NiAl (110) // Ru (0002) between the two layers. Moreover, significant improvement of this epitaxial relationship was developed, which produced narrow c-axis distribution of the Ru intermediate layer with small grain size. The addition of the NiAl + SiO 2 seedlayer is a very promising approach to reduce the Ru intermediate layer grain size and eventually the magnetic layer grain size for perpendicular magnetic recording media without deterioration of other properties of thin films

Sol-gel deposition of buffer layers on biaxially textured metal substances

Science.gov (United States)

Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Enhanced Optical and Electrical Properties of TiO_2 Buffered IGZO/TiO_2 Bi-Layered Films

International Nuclear Information System (INIS)

Moon, Hyun-Joo; Kim, Daeil

2016-01-01

In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO_2-deposited glass substrate to determine the effect of the thickness of a thin TiO_2 buffer layer on the structural, optical, and electrical properties of the films. The thicknesses of the TiO_2 buffer layers were 5, 10 and 15 nm, respectively. As-deposited IGZO films with a 10 nm-thick TiO_2 buffer layer had an average optical transmittance of 85.0% with lower resistivity (1.83×10-2 Ω cm) than that of IGZO single layer films. The figure of merit (FOM) reached a maximum of 1.44×10-4 Ω-1 for IGZO/10 nm-thick TiO_2 bi-layered films, which is higher than the FOM of 6.85×10-5 Ω-1 for IGZO single layer films. Because a higher FOM value indicates better quality transparent conducting oxide (TCO) films, the IGZO/10 nm-thick TiO_2 bi-layered films are likely to perform better in TCO applications than IGZO single layer films.

ZnO buffer layer for metal films on silicon substrates

Science.gov (United States)

Ihlefeld, Jon

2014-09-16

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

Semi-insulating Sn-Zr-O: Tunable resistance buffer layers

Energy Technology Data Exchange (ETDEWEB)

Barnes, Teresa M.; Burst, James M.; Reese, Matthew O.; Perkins, Craig L. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2015-03-02

Highly resistive and transparent (HRT) buffer layers are critical components of solar cells and other opto-electronic devices. HRT layers are often undoped transparent conducting oxides. However, these oxides can be too conductive to form an optimal HRT. Here, we present a method to produce HRT layers with tunable electrical resistivity, despite the presence of high concentrations of unintentionally or intentionally added dopants in the film. This method relies on alloying wide-bandgap, high-k dielectric materials (e.g., ZrO{sub 2}) into the host oxide to tune the resistivity. We demonstrate Sn{sub x}Zr{sub 1−x}O{sub 2}:F films with tunable resistivities varying from 0.001 to 10 Ω cm, which are controlled by the Zr mole fraction in the films. Increasing Zr suppresses carriers by expanding the bandgap almost entirely by shifting the valence-band position, which allows the HRT layers to maintain good conduction-band alignment for a low-resistance front contact.

Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells

NARCIS (Netherlands)

Frijters, C.H.; Poodt, P.; Illeberi, A.

2016-01-01

Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior

Simple solution-processed CuO{sub X} as anode buffer layer for efficient organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Shen, Wenfei [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Institute of Hybrid Materials, The Growing Base for State Key Laboratory, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Yang, Chunpeng [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Bao, Xichang, E-mail: baoxc@qibebt.ac.cn [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Sun, Liang; Wang, Ning [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Tang, Jianguo [Institute of Hybrid Materials, The Growing Base for State Key Laboratory, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Chen, Weichao [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Yang, Renqiang, E-mail: yangrq@qibebt.ac.cn [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China)

2015-10-15

Graphical abstract: - Highlights: • Simple solution-processed CuO{sub X} hole transport layer for efficient organic solar cell. • Good photovoltaic performances as hole transport layer in OSCs with P3HT and PBDTTT-C as donor materials. • The device with CuO{sub X} as hole transport layer shows great improved stability compared with that of device with PEDOT:PSS as hole transport layer. - Abstract: A simple, solution-processed ultrathin CuO{sub X} anode buffer layer was fabricated for high performance organic solar cells (OSCs). XPS measurement demonstrated that the CuO{sub X} was the composite of CuO and Cu{sub 2}O. The CuO{sub X} modified ITO glass exhibit a better surface contact with the active layer. The photovoltaic performance of the devices with CuO{sub X} layer was optimized by varying the thickness of CuO{sub X} films through changing solution concentration. With P3HT:PC{sub 61}BM as the active layer, we demonstrated an enhanced PCE of 4.14% with CuO{sub X} anode buffer layer, compared with that of PEDOT:PSS layer. The CuO{sub X} layer also exhibits efficient photovoltaic performance in devices with PBDTTT-C:PC{sub 71}BM as the active layer. The long-term stability of CuO{sub X} device is better than that of PEDOT:PSS device. The results indicate that the easy solution-processed CuO{sub X} film can act as an efficient anode buffer layer for high-efficiency OSCs.

Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor

International Nuclear Information System (INIS)

Zhang Xianjun; Yang Yintang; Chai Changchun; Duan Baoxing; Song Kun; Chen Bin

2012-01-01

A lower doped layer is inserted between the gate and channel layer and its effect on the performance of a 4H-SiC Schottky barrier field-effect transistor (MESFET) is investigated. The dependences of the drain current and small signal parameters on this inserted gate-buffer layer are obtained by solving one-dimensional (1-D) and two-dimensional (2-D) Poisson's equations. The drain current and small signal parameters of the 4H-SiC MESFET with a gate-buffer layer thickness of 0.15 μm are calculated and the breakdown characteristics are simulated. The results show that the current is increased by increasing the thickness of the gate-buffer layer; the breakdown voltage is 160 V, compared with 125 V for the conventional 4H-SiC MESFET; the cutoff frequency is 27 GHz, which is higher than 20 GHz of the conventional structure due to the lower doped gate-buffer layer. (semiconductor devices)

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

Science.gov (United States)

Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

2017-07-21

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Microstructural characterization of chemical bath deposited and sputtered Zn(O,S) buffer layers

International Nuclear Information System (INIS)

Gautron, E.; Buffière, M.; Harel, S.; Assmann, L.; Arzel, L.; Brohan, L.; Kessler, J.; Barreau, N.

2013-01-01

The present work aims at investigating the microstructure of Zn(O,S) buffer layers relative to their deposition route, namely either chemical bath deposition (CBD) or RF co-sputtering process (PVD) under pure Ar. The core of the study consists of cross-sectional transmission electron microscopy (TEM) characterization of the differently grown Zn(O,S) thin films on co-evaporated Cu(In,Ga)Se 2 (CIGSe) absorbers. It shows that the morphology of Zn(O,S) layer deposited on CIGSe using CBD process is made of a thin layer of well oriented ZnS sphalerite-(111) and/or ZnS wurtzite-(0002) planes parallel to CIGSe chalcopyrite-(112) planes at the interface with CIGSe followed by misoriented nanometer-sized ZnS crystallites in an amorphous phase. As far as (PVD)Zn(O,S) is concerned, the TEM analyses reveal two different microstructures depending on the S-content in the films: for [S] / ([O] + [S]) = 0.6, the buffer layer is made of ZnO zincite and ZnS wurtzite crystallites grown nearly coherently to each other, with (0002) planes nearly parallel with CIGSe-(112) planes, while for [S] / ([O] + [S]) = 0.3, it is made of ZnO zincite type crystals with O atoms substituted by S atoms, with (0002) planes perfectly aligned with CIGSe-(112) planes. Such microstructural differences can explain why photovoltaic performances are dependent on the Zn(O,S) buffer layer deposition route. - Highlights: ► Zn(O,S) layers were grown by chemical bath (CBD) or physical vapor (PVD) deposition. ► For CBD, a 3 nm ZnS layer is followed by ZnS nano-crystallites in an amorphous phase. ► For PVD with [S] / ([O] + [S]) = 0.3, the layer has a Zn(O,S) zincite structure. ► For PVD with [S] / ([O] + [S]) = 0.6, ZnS wurtzite and ZnO zincite phases are mixed

Growth modes of InN (000-1) on GaN buffer layers on sapphire

International Nuclear Information System (INIS)

Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

2005-01-01

In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

Structure and magnetic properties of NdFeB thin films with Cr, Mo, Nb, Ta, Ti, and V buffer layers

International Nuclear Information System (INIS)

Jiang, H.; O'Shea, M.J.

2000-01-01

Layers of NdFeB of the form A(20 nm)/NdFeB(d nm)/A(20 nm) where A represents Cr, Mo, Nb, Ta, Ti, V were prepared on a silicon substrate by magnetron sputtering. The purpose is to determine how (i) the chosen buffer layer and (ii) NdFeB layer thickness d (especially d 2 Fe 14 B with no preferred crystalline orientation. Our highest coercivities occur for buffer layer elements from row five of the periodic table, 20 kOe (1600 kA/m) in a Nb buffered sample with d of 180 nm and 17 kOe (1350 kA/m) in a Mo buffered sample with d of 180 nm. Buffer layers from row four (Ti, V, and Cr) and row six (Ta) all give lower coercivities. Our largest energy product, 10.3 MG-Oe (82 kJ/m 3 ), is obtained for the Mo buffered sample. Average Nd 2 Fe 14 B crystallite size for this sample is 27 nm. Only the Cr and Ti buffered films show a large coercivity (≥2 kOe) for d of 54 nm with the Cr films showing the highest coercivity, 2.7 kOe (215 kA/m). In films subjected to a rapid thermal anneal (anneal time 30 s) we find that both the coercivity and energy product are larger than in samples subjected to a 20 min anneal. In our Nb buffered systems we obtain coercivities as high as 26.3 kOe (2090 kA/m) after a rapid thermal anneal

Improved Reliability of Small Molecule Organic Solar Cells by Double Anode Buffer Layers

Directory of Open Access Journals (Sweden)

Pao-Hsun Huang

2014-01-01

Full Text Available An optimized hybrid planar heterojunction (PHJ of small molecule organic solar cells (SM-OSCs based on copper phthalocyanine (CuPc as donor and fullerene (C60 as acceptor was fabricated, which obviously enhanced the performance of device by sequentially using both MoO3 and pentacene as double anode buffer layers (ABL, also known as hole extraction layer (HEL. A series of the vacuum-deposited ABL, acting as an electron and exciton blocking layer, were examined for their characteristics in SM-OSCs. The performance and reliability were compared between conventional ITO/ABL/CuPc/C60/BCP/Ag cells and the new ITO/double ABL/CuPc/C60/BCP/Ag cells. The effect on the electrical properties of these materials was also investigated to obtain the optimal thickness of ABL. The comparison shows that the modified cell has an enhanced reliability compared to traditional cells. The improvement of lifetime was attributed to the idea of double layers to prevent humidity and oxygen from diffusing into the active layer. We demonstrated that the interfacial extraction layers are necessary to avoid degradation of device. That is to say, in normal temperature and pressure, a new avenue for the device within double buffer layers has exhibited the highest values of open circuit voltage (Voc, fill factor (FF, and lifetime in this work compared to monolayer of ABL.

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Energy Technology Data Exchange (ETDEWEB)

Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

Preparation and recording characteristics of granular-type perpendicular magnetic recording media with thin intermediate layer

International Nuclear Information System (INIS)

Shintaku, K.; Kiya, T.

2008-01-01

Granular-type media with thin Ru intermediate layer were prepared on a highly oriented high-B s FeCo soft underlayer (SUL). A CoPt-TiO 2 recording layer on a Ru intermediate layer of only 2 nm had high-crystal orientation, high H c of 6.5 kOe, and a high squareness ratio (SQ) of 0.99. The magnetic property of the SUL was also good. The recording performance was measured for the media with different Ru intermediate thicknesses by using a single-pole-type (SPT) head. The media had large reproduced output even for the Ru intermediate layer thickness of 2 nm

Preparation and recording characteristics of granular-type perpendicular magnetic recording media with thin intermediate layer

Energy Technology Data Exchange (ETDEWEB)

Shintaku, K. [Akita Research Institute of Advanced Technology, Akita Prefectural R and D Center, 4-21 Sanuki, Araya, Akita 010-1623 (Japan)], E-mail: shintaku@ait.pref.akita.jp; Kiya, T. [Akita Research Institute of Advanced Technology, Akita Prefectural R and D Center, 4-21 Sanuki, Araya, Akita 010-1623 (Japan)

2008-11-15

Granular-type media with thin Ru intermediate layer were prepared on a highly oriented high-B{sub s} FeCo soft underlayer (SUL). A CoPt-TiO{sub 2} recording layer on a Ru intermediate layer of only 2 nm had high-crystal orientation, high H{sub c} of 6.5 kOe, and a high squareness ratio (SQ) of 0.99. The magnetic property of the SUL was also good. The recording performance was measured for the media with different Ru intermediate thicknesses by using a single-pole-type (SPT) head. The media had large reproduced output even for the Ru intermediate layer thickness of 2 nm.

Glycine buffered synthesis of layered iron(II)-iron(III) hydroxides (green rusts)

DEFF Research Database (Denmark)

Yin, Weizhao; Huang, Lizhi; Pedersen, Emil Bjerglund

2017-01-01

Layered Fe(II)-Fe(III) hydroxides (green rusts, GRs) are efficient reducing agents against oxidizing contaminants such as chromate, nitrate, selenite, and nitroaromatic compounds and chlorinated solvents. In this study, we adopted a buffered precipitation approach where glycine (GLY) was used...

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Directory of Open Access Journals (Sweden)

Chang-Ju Lee

2017-07-01

Full Text Available The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

Directory of Open Access Journals (Sweden)

Md. Billal Hosen

2017-10-01

Full Text Available This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have been described. The schematic diagram of photovoltaic solar cell has been depicted. Moreover, the most important performance measurement graph, J-V characteristic curve, resulting from CIGS solar cell simulation has been analyzed to estimate the optimum values of fill factor and cell efficiency. These optimum results have been obtained from the open circuit voltage, short circuit current density, and the maximum points of voltage and current density generated from the cell.

The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

2012-01-01

The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

Science.gov (United States)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

Energy Technology Data Exchange (ETDEWEB)

Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

2012-01-31

The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

DEFF Research Database (Denmark)

Chen, Yunzhong; Green, Robert J.; Sutarto, Ronny

2017-01-01

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both...... polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how...... these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer...

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

Directory of Open Access Journals (Sweden)

Lung-Chien Chen

2012-01-01

Full Text Available This study investigates an aluminum nitride (AlN nanorod structure sputtered by glancing angle deposition (GLAD and its application as a buffer layer for GaN-based light-emitting diodes (LEDs that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.

Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

International Nuclear Information System (INIS)

Kundu, Sambhu; Olsen, Larry C.

2005-01-01

Cadmium-free copper indium gallium sulfur-selenide (CIGSS) thin film solar cells have been fabricated using chemical bath deposited (CBD) zinc sulfide (ZnS) buffer layers. Shell Solar Industries provided high quality CIGSS absorber layers. The use of CBD-ZnS, which is a higher band gap material than CdS, improved the quantum efficiency of fabricated cells at lower wavelengths, leading to an increase in short circuit current. The best cell to date yielded an active area (0.43 cm 2 ) efficiency of 13.3%. The effect of the ZnS buffer layer thickness on device performance was studied carefully. This paper also presents a discussion of issues relevant to the use of the CBD-ZnS buffer material for improving device performance

Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates

International Nuclear Information System (INIS)

Zhuang Huihui; Yan Jinliang; Xu Chengyang; Meng Delan

2014-01-01

Cu and Cu/ITO films were prepared on polyethylene terephthalate (PET) substrates with a Ga 2 O 3 buffer layer using radio frequency (RF) and direct current (DC) magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga 2 O 3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu(4.2 nm)/ITO(30 nm) films were investigated with respect to the Ga 2 O 3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga 2 O 3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10 −3 Ω −1 were achieved for Cu(4.2 nm)/ITO(30 nm) films with a Ga 2 O 3 layer thickness of 15 nm. (semiconductor materials)

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

Science.gov (United States)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

International Nuclear Information System (INIS)

Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

2006-01-01

The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

Investigations on the passivity of iron in borate and phosphate buffers, pH 8.4

International Nuclear Information System (INIS)

Sieber, I.V.; Hildebrand, H.; Virtanen, S.; Schmuki, P.

2006-01-01

In the present work surface analytical experiments (XPS and AES) on the passive film on iron formed in borate and phosphate buffers (pH 8.4) have been carried out. In the passive film formed in phosphate buffer a significant amount of phosphates is found in the outer part of the film. Boron species are not significantly incorporated in the passive film formed in borate buffer. The mechanism of the reduction of the passive film depends strongly on the electrolyte composition. In borate buffer, cathodic polarization leads to reductive dissolution of the passive film whereas in phosphate buffer the passive film is converted into metallic iron without dissolution but via laterally inhomogeneously formation of an intermediate Fe(II) phosphate layer

Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers

International Nuclear Information System (INIS)

Shikata, G.; Hirano, S.; Inoue, T.; Hijikata, Y.; Orihara, M.; Yaguchi, H.; Yoshida, S.

2008-01-01

We report on the improvement of the surface morphology of a-plane InN films grown by RF molecular beam epitaxy. By using low-temperature (LT) InN buffer layers, we could successfully obtain InN films with a smooth surface. The full width at half maximum values of the X-ray diffraction (11-20) rocking curve along the [0001]InN direction were 2870 arcsec and 3410 arcsec for a-plane InN samples grown at 500 C with and without LT-InN buffer layers, respectively. Thus, we could improve also the crystalline quality of a-plane InN films by using LT-InN buffer layers. We observed strong polarization anisotropy in the photoluminescence spectra of a-plane InN, which is typical of nonpolar wurtzite III-nitride films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

International Nuclear Information System (INIS)

Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

2004-01-01

We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

Magnetic properties of Pr-Fe-B thick-film magnets deposited on Si substrates with glass buffer layer

Science.gov (United States)

Nakano, M.; Kurosaki, A.; Kondo, H.; Shimizu, D.; Yamaguchi, Y.; Yamashita, A.; Yanai, T.; Fukunaga, H.

2018-05-01

In order to improve the magnetic properties of PLD-made Pr-Fe-B thick-film magnets deposited on Si substrates, an adoption of a glass buffer layer was carried out. The glass layer could be fabricated under the deposition rate of approximately 70 μm/h on a Si substrate using a Nd-YAG pulse laser in the vacuum atmosphere. The use of the layer enabled us to reduce the Pr content without a mechanical destruction and enhance (BH)max value by approximately 20 kJ/m3 compared with the average value of non-buffer layered Pr-Fe-B films with almost the same thickness. It is also considered that the layer is also effective to apply a micro magnetization to the films deposited on Si ones.

Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

Science.gov (United States)

Wang, Lan; Lin, Xianzhong; Ennaoui, Ahmed; Wolf, Christian; Lux-Steiner, Martha Ch.; Klenk, Reiner

2016-02-01

We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

International Nuclear Information System (INIS)

Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

2009-01-01

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

Tunnel magnetoresistance of an as-deposited Co2FeAl0.5Si0.5-based magnetic tunnel junction on a Ta/Ru buffer layer

International Nuclear Information System (INIS)

Hwang, Jae Youn; Lee, Gae Hun; Song, Yun Heub; Yim, Hae In

2010-01-01

A magnetic tunnel junction (MTJ) with a Co 2 FeAl 0.5 Si 0.5 (CFAS) heusler film on a conductive Ta/Ru buffer layer was fabricated for the first time. In the as-deposited state, a highly B2-ordered CFAS film was obtained by using the Ta/Ru buffer layer. The Ta (110) buffer layer causes a Ru (002) buffer layer, which leads to the growth of CFAS with a B2 structure and a completely flat CFAS film. After 600 .deg. C annealing, strain relaxation occurred in the Ta/Ru interface, and the surface roughness decreased; however, the B2-ordered CFAS film remained. Also, in the as-deposited state, a exchange-biased CFAS/AlO x /CFAS MTJ deposited on a Ta/Ru buffer layer exhibited a relatively high tunnel magnetoresistance (TMR) of 13% at room temperature, which resulted from the highly B2-ordered CFAS layer and the perfectly flat surface roughness resulting from the use of the Ta/Ru buffer layer.

Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

International Nuclear Information System (INIS)

Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2010-01-01

Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

TRIO: Burst Buffer Based I/O Orchestration

Energy Technology Data Exchange (ETDEWEB)

Wang, Teng [Auburn University; Oral, H Sarp [ORNL; Pritchard, Michael [Auburn University; Wang, Bin [Auburn University; Yu, Weikuan [Auburn University

2015-01-01

The growing computing power on leadership HPC systems is often accompanied by ever-escalating failure rates. Checkpointing is a common defensive mechanism used by scientific applications for failure recovery. However, directly writing the large and bursty checkpointing dataset to parallel filesystem can incur significant I/O contention on storage servers. Such contention in turn degrades the raw bandwidth utilization of storage servers and prolongs the average job I/O time of concurrent applications. Recently burst buffer has been proposed as an intermediate layer to absorb the bursty I/O traffic from compute nodes to storage backend. But an I/O orchestration mechanism is still desired to efficiently move checkpointing data from bursty buffers to storage backend. In this paper, we propose a burst buffer based I/O orchestration framework, named TRIO, to intercept and reshape the bursty writes for better sequential write traffic to storage severs. Meanwhile, TRIO coordinates the flushing orders among concurrent burst buffers to alleviate the contention on storage server bandwidth. Our experimental results reveal that TRIO can deliver 30.5% higher bandwidth and reduce the average job I/O time by 37% on average for data-intensive applications in various checkpointing scenarios.

Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

International Nuclear Information System (INIS)

Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

1995-01-01

YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

International Nuclear Information System (INIS)

Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2008-01-01

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

Representing the atmospheric boundary layer in climate models of intermediate compexity

NARCIS (Netherlands)

Ronda, R.J.; Haarsma, R.J.; Holtslag, A.A.M.

2003-01-01

In this study the role of atmospheric boundary layer schemes in climate models is investigated. Including a boundary layer scheme in an Earth system model of intermediate complexity (EMIC) produces only minor differences in the estimated global distribution of sensible and latent heat fluxes over

Efficiency enhancement of polymer solar cells by applying poly(vinylpyrrolidone) as a cathode buffer layer via spin coating or self-assembly.

Science.gov (United States)

Wang, Haitao; Zhang, Wenfeng; Xu, Chenhui; Bi, Xianghong; Chen, Boxue; Yang, Shangfeng

2013-01-01

A non-conjugated polymer poly(vinylpyrrolidone) (PVP) was applied as a new cathode buffer layer in P3HT:PCBM bulk heterojunction polymer solar cells (BHJ-PSCs), by means of either spin coating or self-assembly, resulting in significant efficiency enhancement. For the case of incorporation of PVP by spin coating, power conversion efficiency (PCE) of the ITO/PEDOT:PSS/P3HT:PCBM/PVP/Al BHJ-PSC device (3.90%) is enhanced by 29% under the optimum PVP spin-coating speed of 3000 rpm, which leads to the optimum thickness of PVP layer of ~3 nm. Such an efficiency enhancement is found to be primarily due to the increase of the short-circuit current (J(sc)) (31% enhancement), suggesting that the charge collection increases upon the incorporation of a PVP cathode buffer layer, which originates from the conjunct effects of the formation of a dipole layer between P3HT:PCBM active layer and Al electrodes, the chemical reactions of PVP molecules with Al atoms, and the increase of the roughness of the top Al film. Incorporation of PVP layer by doping PVP directly into the P3HT:PCBM active layer leads to an enhancement of PCE by 13% under the optimum PVP doping ratio of 3%, and this is interpreted by the migration of PVP molecules to the surface of the active layer via self-assembly, resulting in the formation of the PVP cathode buffer layer. While the formation of the PVP cathode buffer layer is fulfilled by both fabrication methods (spin coating and self-assembly), the dependence of the enhancement of the device performance on the thickness of the PVP cathode buffer layer formed by self-assembly or spin coating is different, because of the different aggregation microstructures of the PVP interlayer.

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

International Nuclear Information System (INIS)

Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

2006-01-01

Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

Directory of Open Access Journals (Sweden)

Wang Lan

2016-01-01

Full Text Available We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

International Nuclear Information System (INIS)

Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

2005-01-01

The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

International Nuclear Information System (INIS)

Lim, Dong-Gun; Kwak, Dong-Joo; Yi Junsin

2002-01-01

In this paper, we report upon an investigation into the feasibility of Y 2 O 3 films as buffer layers for metal ferroelectric insulator semiconductor type capacitors. Buffer layers were prepared by a two-step process of low temperature film growth using the RF reactive magnetron sputtering method and subsequent rapid thermal annealing. By applying an yttrium metal seed layer of 4 nm, unwanted SiO 2 layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. Increasing the post-annealing temperature above 700 deg. C reduced the surface roughness of the Y 2 O 3 films, and increasing the O 2 partial pressure from 10 to 20% increased the surface roughness from 4.0 to 15.1 nm. The Y 2 O 3 films, prepared using an O 2 partial pressure of 20% and annealed at 900 deg. C, exhibited the best surface roughness characteristics of the samples studied. For a substrate temperature above 400 deg. C and an O 2 partial pressure of 20%, we observed that a cubic Y 2 O 3 phase dominated the X-ray diffraction spectra. The lowest lattice mismatch achieved between the Y 2 O 3 film and the Si substrate was 1.75%. By using a two-step process, we reduced the leakage current density of Y 2 O 3 films by two orders of magnitude and the D it to as low as 8.72x10 10 cm -2 eV -1 . A Y 2 O 3 buffer layer grown at 400 deg. C in a 20% O 2 partial pressure and rapidly annealed at 900 deg. C in an oxygen enviroment exhibited the best overall properties for a single transistor ferroelectric random access memory

Effect of Alloy 625 Buffer Layer on Hardfacing of Modified 9Cr-1Mo Steel Using Nickel Base Hardfacing Alloy

Science.gov (United States)

Chakraborty, Gopa; Das, C. R.; Albert, S. K.; Bhaduri, A. K.; Murugesan, S.; Dasgupta, Arup

2016-04-01

Dashpot piston, made up of modified 9Cr-1Mo steel, is a part of diverse safety rod used for safe shutdown of a nuclear reactor. This component was hardfaced using nickel base AWS ER NiCr-B alloy and extensive cracking was experienced during direct deposition of this alloy on dashpot piston. Cracking reduced considerably and the component was successfully hardfaced by application of Inconel 625 as buffer layer prior to hardface deposition. Hence, a separate study was undertaken to investigate the role of buffer layer in reducing the cracking and on the microstructure of the hardfaced deposit. Results indicate that in the direct deposition of hardfacing alloy on modified 9Cr-1Mo steel, both heat-affected zone (HAZ) formed and the deposit layer are hard making the thickness of the hard layer formed equal to combined thickness of both HAZ and deposit. This hard layer is unable to absorb thermal stresses resulting in the cracking of the deposit. By providing a buffer layer of Alloy 625 followed by a post-weld heat treatment, HAZ formed in the modified 9Cr-1Mo steel is effectively tempered, and HAZ formed during the subsequent deposition of the hardfacing alloy over the Alloy 625 buffer layer is almost completely confined to Alloy 625, which does not harden. This reduces the cracking susceptibility of the deposit. Further, unlike in the case of direct deposition on modified 9Cr-1Mo steel, dilution of the deposit by Ni-base buffer layer does not alter the hardness of the deposit and desired hardness on the deposit surface could be achieved even with lower thickness of the deposit. This gives an option for reducing the recommended thickness of the deposit, which can also reduce the risk of cracking.

Enhanced Optical and Electrical Properties of TiO{sub 2} Buffered IGZO/TiO{sub 2} Bi-Layered Films

Energy Technology Data Exchange (ETDEWEB)

Moon, Hyun-Joo; Kim, Daeil [University of Ulsan, Ulsan (Korea, Republic of)

2016-08-15

In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO{sub 2}-deposited glass substrate to determine the effect of the thickness of a thin TiO{sub 2} buffer layer on the structural, optical, and electrical properties of the films. The thicknesses of the TiO{sub 2} buffer layers were 5, 10 and 15 nm, respectively. As-deposited IGZO films with a 10 nm-thick TiO{sub 2} buffer layer had an average optical transmittance of 85.0% with lower resistivity (1.83×10-2 Ω cm) than that of IGZO single layer films. The figure of merit (FOM) reached a maximum of 1.44×10-4 Ω-1 for IGZO/10 nm-thick TiO{sub 2} bi-layered films, which is higher than the FOM of 6.85×10-5 Ω-1 for IGZO single layer films. Because a higher FOM value indicates better quality transparent conducting oxide (TCO) films, the IGZO/10 nm-thick TiO{sub 2} bi-layered films are likely to perform better in TCO applications than IGZO single layer films.

Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

NARCIS (Netherlands)

Kim, N.H.; Han, D.S.; Jung, J.; Cho, J.; Kim, J.S.; Swagten, H.J.M.; You, C.Y.

2015-01-01

We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlOx and Ta/Pt/Co/AlOx structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy

P-6 : Impact of buffer layers on the self-aligned top-gate a-IGZO TFT characteristics

NARCIS (Netherlands)

Nag, M.; en de rest

2015-01-01

In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self-aligned (SA) top gate amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Energy Technology Data Exchange (ETDEWEB)

Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2008-01-15

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

Growth of highly textured SnS on mica using an SnSe buffer layer

International Nuclear Information System (INIS)

Wang, S.F.; Fong, W.K.; Wang, W.; Surya, C.

2014-01-01

We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer. - Highlights: • A record low rocking curve FWHM for deposited SnS on mica • Investigation of the nucleation of SnS on mica using the interface model • Investigation of nucleation mechanism by phi-scan measurement • Grain boundary formation from crystallites of various nucleation orientations • Suppression of nucleation orientations using an SnSe buffer layer

Development of Buffer Layer Technologies for LWIR and VLWIR HgCdTe Integration on Si

National Research Council Canada - National Science Library

Golding, Terry D

2005-01-01

This program proposed to develop manufacturable, cost-effective buffer layer technologies that would allow either hybrid or monolithic integration of LWIR and VLWIR HgCdTe infrared focal plane arrays...

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Finding the lost open-circuit voltage in polymer solar cells by UV-ozone treatment of the nickel acetate anode buffer layer.

Science.gov (United States)

Wang, Fuzhi; Sun, Gang; Li, Cong; Liu, Jiyan; Hu, Siqian; Zheng, Hua; Tan, Zhan'ao; Li, Yongfang

2014-06-25

Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (Voc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased Voc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (Rs) and increase the parallel resistance (Rp) of the devices, inducing enhanced Voc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, Voc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the Voc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%.

High heat flux testing of TiC coated molybdenum with a tungsten intermediate layer

International Nuclear Information System (INIS)

Fujitsuka, Masakazu; Fukutomi, Masao; Okada, Masatoshi

1988-01-01

The use of low atomic number (Z) material coatings for fusion reactor first-wall components has proved to be a valuable technique to reduce the plasma radiation losses. Molybdenum coated with titanium carbide is considered very promising since it has a good capability of receiving heat from the plasma. An interfacial reaction between the TiC film and the molybdenum substrate, however, causes a severe deterioration of the film at elevated temperatures. In order to solve this problem a TiC coated molybdenum with an intermediate tungsten layer was developed. High temperature properties of this material was evaluated by a newly devised electron beam heating apparatus. TiC coatings prepared on a vacuum-heat-treated molybdenum with a tungsten intermediate layer showed good high temperature stability and survived 2.0 s pulses of heating at a power density as high as 53 MW/m 2 . The melt area of the TiC coatings in high heat flux testings also markedly decreased when a tungsten intermediate layer was applied. The melting mechanism of the TiC coatings with and without a tungsten intermediate layer was discussed by EPMA measurements. (author)

On contribution of horizontal and intra-layer convection to the formation of the Baltic Sea cold intermediate layer

Directory of Open Access Journals (Sweden)

I. Chubarenko

2010-02-01

Full Text Available Seasonal cascades down the coastal slopes and intra-layer convection are considered as the two additional mechanisms contributing to the Baltic Sea cold intermediate layer (CIL formation along with conventional seasonal vertical mixing. Field measurements are presented, reporting for the first time the possibility of denser water formation and cascading from the Baltic Sea underwater slopes, which take place under fall and winter cooling conditions and deliver waters into intermediate layer of salinity stratified deep-sea area. The presence in spring within the CIL of water with temperature below that of maximum density (Tmd and that at the local surface in winter time allows tracing its formation: it is argued that the source of the coldest waters of the Baltic CIL is early spring (March–April cascading, arising due to heating of water before reaching the Tmd. Fast increase of the open water heat content during further spring heating indicates that horizontal exchange rather than direct solar heating is responsible for that. When the surface is covered with water, heated above the Tmd, the conditions within the CIL become favorable for intralayer convection due to the presence of waters of Tmd in intermediate layer, which can explain its well-known features – the observed increase of its salinity and deepening with time.

Ba{sub y}Sr{sub 1−y}TiO{sub 3} buffer layers for strain tuning of infinite-layer Sr{sub 1−x}La{sub x}CuO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Sakuma, Keita, E-mail: sakuma.keita@d.mbox.nagoya-u.ac.jp; Ito, Masataka; He, Yilun; Hajiri, Tetsuya; Ueda, Kenji; Asano, Hidefumi

2016-08-01

We report on the precise tuning of lattice strain in an infinite-layer electron-doped high temperature superconductor Sr{sub 1−x}La{sub x}CuO{sub 2} (SLCO; a{sub SLCO} = 0.3949 nm for x = 0.1), which is a perovskite-related oxide, using perovskite BaTiO{sub 3}–SrTiO{sub 3} (BSTO; Ba{sub y}Sr{sub 1−y}TiO{sub 3}) buffer layers. The BSTO buffer layers formed on (001) (La{sub 0.18}Sr{sub 0.82})(Al{sub 0.59}Ta{sub 0.41})O{sub 3} substrates by magnetron sputtering were fully relaxed with high crystalline quality due to high oxygen partial pressure deposition and post annealing at 950 °C. The lattice constants of the BSTO buffer layers could be controlled in the range of 0.3926–0.3973 nm by changing the Ba content (y = 0.2–0.7). These BSTO buffer layers allow coherent growth of SLCO thin films, and a clear dependence of the superconducting transition temperature on the lattice strain was observed. The fabrication of these BSTO/superconductor heterostructures may provide novel devices composed of functional perovskite thin films, in addition to a general approach for the precise control of lattice strain in functional perovskite thin films. - Highlights: • Ba{sub y}Sr{sub 1−y}TiO{sub 3} buffer layers were developed for the strain tuning of perovskite-related oxides. • Strain effect in Sr{sub 1−x}La{sub x}CuO{sub 2} was investigated by using Ba{sub y}Sr{sub 1−y}TiO{sub 3} buffer layers. • Ba{sub y}Sr{sub 1−y}TiO{sub 3} buffer layers can be used to tune the strain in other perovskite oxides.

A Metal Bump Bonding Method Using Ag Nanoparticles as Intermediate Layer

Science.gov (United States)

Fu, Weixin; Nimura, Masatsugu; Kasahara, Takashi; Mimatsu, Hayata; Okada, Akiko; Shoji, Shuichi; Ishizuka, Shugo; Mizuno, Jun

2015-11-01

The future development of low-temperature and low-pressure bonding technology is necessary for fine-pitch bump application. We propose a bump structure using Ag nanoparticles as an intermediate layer coated on a fine-pitch Cu pillar bump. The intermediate layer is prepared using an efficient and cost-saving squeegee-coating method followed by a 100°C baking process. This bump structure can be easily flattened before the bonding process, and the low-temperature sinterability of the nanoparticles is retained. The bonding experiment was successfully performed at 250°C and 39.8 MPa and the bonding strength was comparable to that achieved via other bonding technology utilizing metal particles or porous material as bump materials.

White OLED with high stability and low driving voltage based on a novel buffer layer MoOx

Energy Technology Data Exchange (ETDEWEB)

Jiang Xueyin [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang Zhilin [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Cao Jin [Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072 (China); Khan, M A [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Khizar-ul-Haq [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhu Wenqing [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China)

2007-09-21

White organic light emitting diodes (WOLEDs) with copper phthalocyanine (CuPc), 4,4',4-prime-tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine (m-MTDATA), tungsten oxide (WO{sub 3}) and molybdenum oxide (MoOx) as buffer layers have been investigated. The MoOx based device shows superior performance with low driving voltage, high power efficiency and much longer lifetime than those with other buffer layers. For the Cell using MoOx as buffer layer and 4,7-diphenyl-1,10-phenanthroline (Bphen) as electron transporting layer (ETL), at the luminance of 1000 cd m{sup -2}, the driving voltage is 4.9 V, which is 4.2 V, 2 V and 0.7 V lower than that of the devices using CuPc (Cell-CuPc), m-MTDATA (Cell-m-MTDATA) and WO{sub 3} (Cell-WO{sub 3}) as buffer layers, respectively. Its power efficiency is 7.67 Lm W{sup -1}, which is 2.37 times higher than that of Cell-CuPc and a little higher than that of Cell-m-MTDATA. The projected half-life under the initial luminance of 100 cd m{sup -2} is 55 260 h, which is more than 4.6 times longer than that of Cell-m-MTDATA and Cell-CuPc. The superior performance of Cell-MoOx is attributed to its high hole injection ability and the stable interface between MoOx and organic material. The work function of MoOx has been measured by the contact potential difference method. The J-V curves of 'hole-only' devices indicate that a small hole injection barrier between MoOx/N,'-bis(naphthalene-1-y1)-N, N'-bis(phenyl)-benzidine (NPB) leads to a strong hole injection, resulting in a low driving voltage and a high stability.

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

Organometallic tris(8-hydroxyquinoline)aluminum complexes as buffer layers and dopants in inverted organic solar cells

International Nuclear Information System (INIS)

Tolkki, Antti; Kaunisto, Kimmo; Heiskanen, Juha P.; Omar, Walaa A.E.; Huttunen, Kirsi; Lehtimäki, Suvi; Hormi, Osmo E.O.; Lemmetyinen, Helge

2012-01-01

Tris(8-hydroxyquinoline)aluminum (Alq 3 ) is a frequently used material for organic light emitting diodes. The electronic properties and solubility can be tuned by chemical tailoring of the quinoline part, which makes it an interesting candidate for organic solar cells. Steady-state absorption and fluorescence, as well as time-resolved fluorescence properties of the parent Alq 3 and a series of complexes consisting of derivatives, such as 4-substituted pyrazol, methylpyrazol, arylvinyl, and pyridinoanthrene moieties, of the quinoline ligand, were studied in solutions and in thin films. Suitability of the complexes as anodic buffer layers or dopants in inverted organic solar cells based on the well known bulk heterojunction of poly(3-hexylthiophene) (P3HT) and phenyl-C 61 -butyric acid methyl ester (PCBM) was tested. The devices equipped with the derivatives showed higher power conversion efficiency (η) compared to the photocells containing the parent Alq 3 . Open circuit voltage (V oc ) was increased when the derivatives were utilized as the anodic buffer layer. Doping of the P3HT:PCBM with a small amount of Alq 3 or its derivative improved short circuit current density, V oc , fill factor, and η, while the series resistance decreased. In addition, the devices were stable in air over several weeks without encapsulation. Possible mechanisms leading to the improvements in the photovoltaic performance by using the parent Alq 3 or its derivative as buffer layer or dopant are discussed. - Highlights: ► Tris(8-hydroxyquinoline)aluminum (Alq 3 ) complexes in inverted organic solar cells. ► The Alq 3 complexes were used as an anodic buffer layer and as a dopant. ► Efficiency increased and the derivatives revealed varying open circuit voltage. ► Photovoltaic performance was stable after storage in a dark ambient atmosphere.

Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

Directory of Open Access Journals (Sweden)

Gnilenko A. B.

2015-12-01

Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

Enhanced magnetic properties of chemical solution deposited BiFeO3 thin film with ZnO buffer layer

International Nuclear Information System (INIS)

Rajalakshmi, R.; Kambhala, Nagaiah; Angappane, S.

2012-01-01

Highlights: ► Enhanced magnetization of BiFeO 3 is important for strong magnetoelectric coupling. ► BiFeO 3 film with ZnO buffer layer was successfully synthesized by chemical method. ► Magnetization of BiFeO 3 has increased by more than 10 times with ZnO buffer layer. ► A mechanism for enhancement in ferromagnetism of BiFeO 3 film is proposed. - Abstract: Magnetic properties of BiFeO 3 films deposited on Si substrates with and without ZnO buffer layer have been studied in this work. We adopted the chemical solution deposition method for the deposition of BiFeO 3 as well as ZnO films. The x-ray diffraction measurements on the deposited films confirm the formation of crystalline phase of BiFeO 3 and ZnO films, while our electron microscopy measurements help to understand the morphology of few micrometers thick films. It is found that the deposited ZnO film exhibit a hexagonal particulate surface morphology, whereas BiFeO 3 film fully covers the ZnO surface. Our magnetic measurements reveal that the magnetization of BiFeO 3 has increased by more than ten times in BiFeO 3 /ZnO/Si film compared to BiFeO 3 /Si film, indicating the major role played by ZnO buffer layer in enhancing the magnetic properties of BiFeO 3 , a technologically important multiferroic material.

Study of the influence of Nb buffer layer on the exchange coupling induced at the Co/IrMn interface

Energy Technology Data Exchange (ETDEWEB)

Merino, I.L.C., E-mail: isabel5cas@gmail.com [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil); Figueiredo, L.C. [Instituto de Física, Universidade de Brasília, Brasília 70910-900 (Brazil); Passamani, E.C.; Nascimento, V.P. [Departamento de Física, Universidade Federal do Espírito Santo, Vitória 29075-910 (Brazil); Pelegrini, F. [Instituto de Física, Universidade Federal de Goiás, Goiânia 74560-900 (Brazil); Baggio Saitovitch, E. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil)

2017-06-15

Highlights: • Nb buffer layer favors smooth/rough Co/IrMn interfaces, depending on its thickness. • Double and single-like hysteresis loop features depend on the Nb thickness. • Co uniaxial anisotropy induced exchange-bias in as-deposited sample. • Uniaxial and exchange-bias anisotropy directions depend on the Nb thickness. • Thicker Nb favors non-collinear anisotropies, while thinner Nb favors collinear. - Abstract: Hybrid Nb(t{sub Nb})/Co(10 nm)/IrMn(15 nm)/Nb(10 nm) heterostructured materials were prepared by DC Magnetron Sputtering and systematically studied by X-ray, magnetization and ferromagnetic resonance techniques. For thinner Nb buffer layer (≤10 nm), it was found that there is an inter-diffusion at Co/IrMn interface, which favors double-like hysteresis loop. For thicker Nb layers, however, a gradual transition from double to single-like hysteresis loops is observed and it is associated with the reduction of the Nb roughness, which also enhances the exchange coupling at the Co/IrMn interface. Nb grown on IrMn layer induces the formation of an NbIrMn alloy layer, while no evidence of inter-diffusion at the Co/Nb interface is observed. For rougher Nb buffer layers (t{sub Nb} < 50 nm), exchange bias and Co uniaxial anisotropies are pointing at the same direction (β∼zero), but for smoother Nb buffer layer (t{sub Nb} = 50 nm) a β angle of 150{sup o} is found. Exchange bias effect was measured in as-prepared and in field-cooled samples; being its presence, in as-prepared sample, attributed to the unidirectional anisotropy of the Co layer (its intensity is modified in case of sample with a CoIrMn alloy layer). Considering that the Si/Nb/Co/IrMn interfaces have different β values (t{sub Nb} = 35 and 50 nm), a study of the influence of magnetization direction, governed by exchange-biased layers, on superconducting properties of Nb films can be successfully done in this hybrid system.

Simple O2 Plasma-Processed V2O5 as an Anode Buffer Layer for High-Performance Polymer Solar Cells

DEFF Research Database (Denmark)

Bao, Xichang; Zhu, Qianqian; Wang, Ting

2015-01-01

A simple O2 plasma processing method for preparation of a vanadium oxide (V2O5) anode buffer layer on indium tin oxide (ITO)-coated glass for polymer solar cells (PSCs) is reported. The V2O5 layer with high transmittance and good electrical and interfacial properties was prepared by spin coating...... the illumination of AM 1.5G (100 mW/cm2). Compared to that of the control device with PBDTTT-C:PC71BM as the active layer and PEDOT:PSS (PCE of 6.52%) and thermally annealed V2O5 (PCE of 6.27%) as the anode buffer layer, the PCE was improved by 15.6 and 20.2%, respectively, after the introduction of a V2O5 (O2...... plasma) anode buffer layer. The improved PCE is ascribed to the greatly improved fill factor and enhanced short-circuit current density of the devices, which benefited from the change in the work function of V2O5, a surface with many dangling bonds for better interfacial contact, and the excellent charge...

A possibility of enhancing Jc in MgB2 film grown on metallic hastelloy tape with the use of SiC buffer layer

International Nuclear Information System (INIS)

Putri, W. B. K.; Kang, B.; Ranot, M.; Lee, J. H.; Kang, W. N.

2014-01-01

We have grown MgB 2 on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and 600 degrees C by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, MgB 2 films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the MgB 2 films on SiC/Hastelloy deposited at 500 and 600 degrees C. From the surface analysis, smaller and denser grains of MgB 2 tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of MgB 2 tapes.

The intermediate layers and associated tidal motions observed by a digisonde in the equatorial anomaly region

Directory of Open Access Journals (Sweden)

C.-C. Lee

2003-04-01

Full Text Available This investigation presents an initial attempt to analyze a full year of daily ionosonde observations relevant to the determination of plasma densities, tidal structures, and ion transports in the equatorial anomaly region of the lower ionosphere. Particular focus is on the intermediate layers, their seasonal and diurnal variations, and cause-effect relationships. The ionogram database was recorded using a digisonde portable sounder (DPS at National Central University (NCU, 24 °58' N, 121°11' E during 1996. Statistical results indicate that the intermediate layers appear primarily during the daytime of the spring/winter months. The monthly median height characteristics reveal that the layers descend from high to low altitudes and different tidal motions control the layers in different months. Generally, the semi-diurnal and quarter-diurnal tides, which cause ionization convergence, are mainly in the spring/winter and summer/autumn months, respectively. Variations in the electron densities of the layers also indicate that the density increases could result from a great number of molecular and metallic ions. Furthermore, a novel approach to ionogram presentation is introduced to investigate the intermediate layers. This approach allows the DPS to characterize the detailed daily information of the intermediate layers.Key words. Ionosphere (equatorial ionosphere; ionosphere-atmosphere interactions; ionospheric irregularities

Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer

NARCIS (Netherlands)

Lee, Y.J.; de Jong, Machiel Pieter; van der Wiel, Wilfred Gerard; Kim, Y.; Brock, J.D.

2010-01-01

We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Directory of Open Access Journals (Sweden)

Rui Sun

2016-06-01

Full Text Available We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100 substrates with a TiN buffer layer. A 50-nm-thick (200-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200-orientated TiN buffer layer and had a highly crystalline structure with the (200 orientation.

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Energy Technology Data Exchange (ETDEWEB)

Sun, Rui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Makise, Kazumasa; Terai, Hirotaka [Advanced ICT Research Institute, National Institute of Information and Communications Technology (Japan); Zhang, Lu [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Wang, Zhen, E-mail: zwang@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Tech University, Shanghai 201210 (China)

2016-06-15

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{sup 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

Improved tribological properties of TiC with porous nanostructured TiO2 intermediate layer

International Nuclear Information System (INIS)

Shanaghi, Ali; Ahangarani, Shahrokh; Sabour Rouhaghdam, Ali Reza; Chu, Paul K.

2011-01-01

Highlights: ► The porous TiO 2 nanoparticle coating is deposited as an intermediate layer on steel. ► A homogenous and low friction TiC nanostructure coating is deposited by plasma CVD. ► Intermediate layer can be determined the nucleation and growth of the TiC coating. ► The porous interlayer improves the friction and wear of the TiC nanostructure coating. - Abstract: The mismatch in the thermal expansion coefficients between TiC coatings and steel substrates and residual stress in the TiC degrade the tribological properties. In this work, a porous nanostructured TiO 2 coating is deposited as an intermediate layer on hot-work steel (H 11 ) before final deposition of the TiC film. This intermediate layer is expected to reduce the interfacial energy, decreases the thermal mismatch between TiC and steel, and improves the tribological properties. Grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and pin-on-disk are used to study the structure as well as tribological properties such as friction, wear, and hardness. Our results reveal that the porous TiO 2 interlayer improves the friction, wear, hardness, and elastic modulus of the system.

The effect of buffer-layer on the steady-state energy release rate of a tunneling crack in a wind turbine blade joint

DEFF Research Database (Denmark)

Jørgensen, Jeppe Bjørn; Sørensen, Bent F.; Kildegaard, Casper

2018-01-01

propagation of tunneling cracks. However, for wind turbine blade relevant material combinations it is found more effective to reduce the thickness of the adhesive layer since the stiffness mismatch between the existing laminate and the adhesive is already high. The effect of material orthotropy was found......The effect of a buffer-layer on the steady-state energy release rate of a tunneling crack in the adhesive layer of a wind turbine blade joint, loaded in tension, is investigated using a parametric 2D tri-material finite element model. The idea of embedding a buffer-layer in-between the adhesive...... and the basis glass fiber laminate to improve the existing joint design is novel, but the implications hereof need to be addressed.The results show that it is advantageous to embed a buffer-layer near the adhesive with controllable thickness-and stiffness properties in order to improve the joint design against...

Electrochemical preparation of MoO{sub 3} buffer layer deposited onto the anode in organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Gacitua, M.; Soto, G.; Valle, M.A. del [Pontificia Universidad Catolica de Chile, Facultad de Quimica, Laboratorio de Electroquimica de Polimeros (LEP), Santiago (Chile); Boutaleb, Y.; Rehamnia, R. [Laboratoire d' Electrochimie, Universite Badji Mokhtar, Annaba (Algeria); Cattin, L.; Louarn, G. [Universite de Nantes, Nantes Atlantique Universites, Institut des Materiaux Jean Rouxel (IMN)-CNRS, Faculte des Sciences et Techniques, Nantes (France); Abe, S.Y. [Laboratoire de Physique de la Matiere Condensee et de Technologie (LPMCT), Universite de Cocody (Ivory Coast); Lare, Y. [Laboratoire d' Energie Solaire, Universite de Lome, Lome (Togo); Morsli, M; Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, Nantes (France); Drici, A. [LEREC Departement de physique, Universite Badji Mokhtar, Annaba (Algeria)

2010-08-15

In this work the authors have studied the advantages of using electrochemically deposited molybdenum oxide as a buffer layer in an organic bilayer heterojunction solar cell arrangement. Furthermore, it has been probed that electrochemistry provides an alternative low cost, reproducible and less laborious method to prepare thin layered deposits. The precursor solution is composed by a concentrated molybdic acid solution in a sulphuric media in order to ensure the obtainment of low reduced molybdenum species. Therefore, by means of potentiostatic techniques, ITO/molybdenum oxide transparent anodes were tested for the photovoltaic device showing improved surface properties. XDR and AFM techniques were used to characterize the morphology of the deposits. The films with optimum thickness (5 nm) are amorphous. XPS analysis indicates that the best results in solar cell performance are in hand with a heterogeneous composition of the molybdenum oxide film presenting Mo{sup V} and Mo{sup VI} as predominant species. The MoO{sub 3} films deposited by cyclic voltammetry are not as homogeneous as those deposited by potentiostatic technique and only Mo{sup VI} species are present. These differences may justify the different behaviour of the solar cells using these different buffer layers. Only buffer layers deposited by potentiostatic technique allow improving the cells performances in the same way than those achieved by evaporation. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

Science.gov (United States)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Diffractive intermediate layer enables broadband light trapping for high efficiency ultrathin c-Si tandem cells

Energy Technology Data Exchange (ETDEWEB)

Li, Guijun, E-mail: gliad@connect.ust.hk; Ho, Jacob Y. L.; Li, He; Kwok, Hoi-Sing [State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2014-06-09

Light management through the intermediate reflector in the tandem cell configuration is of great practical importance for achieving high stable efficiency and also low cost production. So far, however, the intermediate reflectors employed currently are mainly focused on the light absorption enhancement of the top cell. Here, we present a diffractive intermediate layer that allows for light trapping over a broadband wavelength for the ultrathin c-Si tandem solar cell. Compared with the standard intermediate reflector, this nanoscale architectural intermediate layer results in a 35% and 21% remarkable enhancement of the light absorption in the top (400–800 nm) and bottom (800–1100 nm) cells simultaneously, and ultrathin c-Si tandem cells with impressive conversion efficiency of 13.3% are made on the glass substrate.

Diffractive intermediate layer enables broadband light trapping for high efficiency ultrathin c-Si tandem cells

International Nuclear Information System (INIS)

Li, Guijun; Ho, Jacob Y. L.; Li, He; Kwok, Hoi-Sing

2014-01-01

Light management through the intermediate reflector in the tandem cell configuration is of great practical importance for achieving high stable efficiency and also low cost production. So far, however, the intermediate reflectors employed currently are mainly focused on the light absorption enhancement of the top cell. Here, we present a diffractive intermediate layer that allows for light trapping over a broadband wavelength for the ultrathin c-Si tandem solar cell. Compared with the standard intermediate reflector, this nanoscale architectural intermediate layer results in a 35% and 21% remarkable enhancement of the light absorption in the top (400–800 nm) and bottom (800–1100 nm) cells simultaneously, and ultrathin c-Si tandem cells with impressive conversion efficiency of 13.3% are made on the glass substrate.

Development of biaxially textured buffer layers on rolled-Ni substrates for high current YBa2Cu3O7-y coated conductors

International Nuclear Information System (INIS)

Paranthaman, M.; Goyal, A.; Norton, D.P.

1996-01-01

This paper describes the development of 3 buffer layer architectures with good biaxial textures on rolled-Ni substrates using vacuum processing techniques. The techniques include pulsed laser ablation, e-beam evaporation, dc and rf magnetron sputtering. The first buffer layer architecture consists of an epitaxial laminate of Ag/Pd(Pt)/Ni. The second buffer layer consists of an epitaxial laminate of CeO 2 /Pd/Ni. The third alternative buffer layer architecture consists of an epitaxial laminate of YSZ/CeO 2 /Ni. The cube (100) texture in the Ni was produced by cold rolling followed by recrystallization. Crystallographic orientations of the Pd, Ag, CeO 2 , and YSZ films grown were all (100). We recently demonstrated a critical- current density of 0.73x10 6 A/cm 2 at 77 K and zero field on 1.4 μm thick YBa 2 Cu 3 O 7-y (YBCO) film. This film was deposited by pulsed laser ablation on a YBCO/YSZ/CeO 2 /Ni substrate

Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

International Nuclear Information System (INIS)

Li, G.; Pu, M.H.; Sun, R.P.; Wang, W.T.; Wu, W.; Zhang, X.; Yang, Y.; Cheng, C.H.; Zhao, Y.

2008-01-01

An over 150 nm thick Sm 0.2 Ce 0.8 O 1.9-x (SCO) single buffer layer has been deposited on bi-axially textured NiW (2 0 0) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at T c0 = 87 K as well as J c (0 T, 77 K) ∼ 1 MA/cm 2 . These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO 2 film, which renders it a promising candidate as single buffer layer for YBCO coated conductors

Performance of strontium- and magnesium-doped lanthanum gallate electrolyte with lanthanum-doped ceria as a buffer layer for IT-SOFCs

Science.gov (United States)

Lee, Dokyol; Han, Ju-Hyeong; Kim, Eun-Gu; Song, Rak-Hyun; Shin, Dong-Ryul

La 0.8Sr 0.2Ga 0.8Mg 0.2O 2.8 (LSGM8080) powder, showing the highest electrical conductivity among LSGMs of various compositions, is synthesized using the glycine nitrate process (GNP) and used as the electrolyte for an intermediate-temperature solid oxide fuel cell (IT-SOFC). The LDC (Ce 0.55La 0.45O 1.775) powder is synthesized by a solid-state reaction and employed as the material for a buffer layer to prevent the reaction between the anode and electrolyte materials. The LDC also serves as the skeleton material for the anode. An anode-supported single cell with an active area of 1 cm 2 is constructed for performance evaluation. A single-cell test is performed at 750 and 800 °C. The maximum power density of the cell 459 and 664 mW cm -2 at 750 and 800 °C, respectively.

Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

International Nuclear Information System (INIS)

Ahn, Byung Du; Ko, Young Gun; Oh, Sang Hoon; Song, Jean-Ho; Kim, Hyun Jae

2009-01-01

The present work was made to investigate the effect of oxygen pressure of SiO x layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO x buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO x layer as a buffer, the electrical resistivity of GZO/SiO x /PET films gradually decreased from 7.6 x 10 -3 to 6.8 x 10 -4 Ω.cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO x buffer layers. In addition, the average optical transmittance of GZO/SiO x /PET films in a visible regime was estimated to be ∼ 90% comparable to that of GZO deposited onto a glass substrate.

Directed Vertical Diffusion of Photovoltaic Active Layer Components into Porous ZnO-Based Cathode Buffer Layers.

Science.gov (United States)

Kang, Jia-Jhen; Yang, Tsung-Yu; Lan, Yi-Kang; Wu, Wei-Ru; Su, Chun-Jen; Weng, Shih-Chang; Yamada, Norifumi L; Su, An-Chung; Jeng, U-Ser

2018-04-01

Cathode buffer layers (CBLs) can effectively further the efficiency of polymer solar cells (PSCs), after optimization of the active layer. Hidden between the active layer and cathode of the inverted PSC device configuration is the critical yet often unattended vertical diffusion of the active layer components across CBL. Here, a novel methodology of contrast variation with neutron and anomalous X-ray reflectivity to map the multicomponent depth compositions of inverted PSCs, covering from the active layer surface down to the bottom of the ZnO-based CBL, is developed. Uniquely revealed for a high-performance model PSC are the often overlooked porosity distributions of the ZnO-based CBL and the differential diffusions of the polymer PTB7-Th and fullerene derivative PC 71 BM of the active layer into the CBL. Interface modification of the ZnO-based CBL with fullerene derivative PCBEOH for size-selective nanochannels can selectively improve the diffusion of PC 71 BM more than that of the polymer. The deeper penetration of PC 71 BM establishes a gradient distribution of fullerene derivatives over the ZnO/PCBE-OH CBL, resulting in markedly improved electron mobility and device efficiency of the inverted PSC. The result suggests a new CBL design concept of progressive matching of the conduction bands. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Organometallic tris(8-hydroxyquinoline)aluminum complexes as buffer layers and dopants in inverted organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Tolkki, Antti, E-mail: antti.tolkki@tut.fi [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FI-33101, Tampere (Finland); Kaunisto, Kimmo [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FI-33101, Tampere (Finland); Heiskanen, Juha P. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FI-33101, Tampere (Finland); Department of Chemistry, University of Oulu, P.O. Box 3000, FI-90014, Oulu (Finland); Omar, Walaa A.E. [Department of Chemistry, University of Oulu, P.O. Box 3000, FI-90014, Oulu (Finland); Chemistry Branch, Department of Science and Mathematics, Suez Canal University, Suez 43721 (Egypt); Huttunen, Kirsi; Lehtimaeki, Suvi [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FI-33101, Tampere (Finland); Hormi, Osmo E.O. [Department of Chemistry, University of Oulu, P.O. Box 3000, FI-90014, Oulu (Finland); Lemmetyinen, Helge [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FI-33101, Tampere (Finland)

2012-04-30

Tris(8-hydroxyquinoline)aluminum (Alq{sub 3}) is a frequently used material for organic light emitting diodes. The electronic properties and solubility can be tuned by chemical tailoring of the quinoline part, which makes it an interesting candidate for organic solar cells. Steady-state absorption and fluorescence, as well as time-resolved fluorescence properties of the parent Alq{sub 3} and a series of complexes consisting of derivatives, such as 4-substituted pyrazol, methylpyrazol, arylvinyl, and pyridinoanthrene moieties, of the quinoline ligand, were studied in solutions and in thin films. Suitability of the complexes as anodic buffer layers or dopants in inverted organic solar cells based on the well known bulk heterojunction of poly(3-hexylthiophene) (P3HT) and phenyl-C{sub 61}-butyric acid methyl ester (PCBM) was tested. The devices equipped with the derivatives showed higher power conversion efficiency ({eta}) compared to the photocells containing the parent Alq{sub 3}. Open circuit voltage (V{sub oc}) was increased when the derivatives were utilized as the anodic buffer layer. Doping of the P3HT:PCBM with a small amount of Alq{sub 3} or its derivative improved short circuit current density, V{sub oc}, fill factor, and {eta}, while the series resistance decreased. In addition, the devices were stable in air over several weeks without encapsulation. Possible mechanisms leading to the improvements in the photovoltaic performance by using the parent Alq{sub 3} or its derivative as buffer layer or dopant are discussed. - Highlights: Black-Right-Pointing-Pointer Tris(8-hydroxyquinoline)aluminum (Alq{sub 3}) complexes in inverted organic solar cells. Black-Right-Pointing-Pointer The Alq{sub 3} complexes were used as an anodic buffer layer and as a dopant. Black-Right-Pointing-Pointer Efficiency increased and the derivatives revealed varying open circuit voltage. Black-Right-Pointing-Pointer Photovoltaic performance was stable after storage in a dark ambient

Growth of thick La2Zr2O7 buffer layers for coated conductors by polymer-assisted chemical solution deposition

International Nuclear Information System (INIS)

Zhang, Xin; Zhao, Yong; Xia, Yudong; Guo, Chunsheng; Cheng, C.H.; Zhang, Yong; Zhang, Han

2015-01-01

Highlights: • We develops a low-cost and high-efficient technology of fabricating LZO buffer layers. • Sufficient thickness LZO buffer layers have been obtained on NiW (2 0 0) alloy substrate. • Highly biaxially textured YBCO thin film has been deposited on LZO/NiW. - Abstract: La 2 Zr 2 O 7 (LZO) epitaxial films have been deposited on LaAlO 3 (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa 2 Cu 3 O 7−x (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm 2 at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors

Further contribution to the study of buffer layer on austenitic stainless stell overlays obtained by means of automatic submerged arc welding with electrode-wire

International Nuclear Information System (INIS)

Colla, G.

1988-01-01

The influence of several buffer layer types on a 308 type austenitic stainless steel surface overlay having a 19-21% chromium and 10-12% nikel content have been analysed. Cladding passes have been deposited on carbon steel test samples by using automatic submerged arc welding process with electrode-wire. The experimental tests have involved buffer layers having seven different chemical compositions and the obtained results are reported and discussed in the paper. The achieved experimetal results allow selecting the most suitable buffer layer to be deposited in order to reach the required cladding performance in service

Microstructural and magnetic properties of L10 FePt-C (0 0 1) textured nanocomposite films grown on different intermediate layers

International Nuclear Information System (INIS)

Chen, J S; Chow, G M; Lim, B C; Hu, J F; Ding, Y F; Ju, G

2008-01-01

The FePt : C films with different volume fractions of carbon and different thicknesses were epitaxially grown on a CrRu(2 0 0) underlayer with Pt and MgO intermediate layers. The magnetic properties and microstructure of these FePt : C films were investigated. The FePt : C films grown on the Pt intermediate layer consisted of a continuous layer of FePt, with overlying granular FePt grains, while the FePt : C films grown on the MgO intermediate layer consisted of granular FePt : C layers with overlying granular grains. The formation of the overlying granular FePt grains was attributed to carbon diffusion to the surface which resulted in the second nucleation of FePt. The different interface energies and surface energies of FePt on Pt and MgO intermediate layers caused the formation of an initial continuous FePt layer on the Pt intermediate layer and initial granular FePt layers on the MgO intermediate layer. The coupling between the continuous FePt layer or the granular FePt layer and the overlying granular FePt grains resulted in simultaneous magnetization reversal and thus strong exchange coupling in FePt : C films.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

Science.gov (United States)

Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

2016-11-21

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

Effect of non-magnetic intermediate layer on film structure, magnetic properties, and noise characteristics of FeCSi soft magnetic multilayers

International Nuclear Information System (INIS)

Kawano, Hiroyasu; Morikawa, Takeshi; Matsumoto, Koji; Shono, Keiji

2004-01-01

The film structures, magnetic properties, and noise characteristics of soft magnetic multilayers with alternately stacked FeCSi soft magnetic layers and non-magnetic intermediate layers were investigated. The FeCSi layers in an as-deposited multilayer with C or Ta intermediate layers had the same nano-sized fine crystalline grains and low media noise as an as-deposited FeCSi monolayer. Amorphous C intermediate layers suppressed the amplitude of spike noise especially well. In contrast, FeCSi layers in an as-deposited multilayer with Cr or Ti intermediate layers were composed of coarse crystalline grains, which increased the media noise. The crystallographic match at the interface between the layers in a multilayer could explain these phenomena. The similarity of the atomic arrangement at the interface between layers and the crystallographic match of less than a few percent for the distance between atoms crystallized FeCSi layers with nano-sized fine crystalline grains into ones with coarse crystalline grains during deposition

Development and application of a green-chemistry solution deposition technique for buffer layer coating on cube-textured metal substrates in view of further deposition of rare-earth based superconductors

DEFF Research Database (Denmark)

Pallewatta, Pallewatta G A P

which consist of YBCO superconducting coatings on cube-textured Ni based alloy tapes.  Before the epitaxial deposition this superconducting layer, a buffer layer is applied on the metal substrate as a diffusion barrier which is also required to transfer the strong texture of the underlying substrate......, allowing the epitaxial growth of the superconducting layer. State-of-the-art coated conductor hetero structures are mainly based on CeO2 based buffer stacks that consist of a sequence of several different buffer layers. Buffer layers deposited by continuous chemical deposition techniques, which...... is expected to be very advantageous in reel-to-reel applications. The thickness of these SrTiO3 monolayers was large enough to stop the nickel and copper diffusion from the Cu/Ni substrate. Hence, the developed high quality buffer layers are expected to be acting as efficient diffusion barriers and also...

Effects of plasma polymerized para-xylene intermediate layers on characteristics of flexible organic light emitting diodes fabricated on polyethylene terephthalate substrates

International Nuclear Information System (INIS)

Sohn, Sunyoung; Kim, Kyuhyung; Kho, Samil; Jung, Donggeun; Boo, Jin-hyo

2008-01-01

Characteristics of flexible organic light emitting diodes (FOLEDs) with the plasma polymerized para-xylene (PPpX) intermediate layer were investigated. For the purpose of reducing moisture permeation through plastic substrates, a PPpX intermediate layer was inserted between FOLEDs and the plastic substrates. As the concentration of C-H bonding in the PPpX film deposited at 25 deg. C was increased, PPpX films showed increased transmittance. Surface morphologies of polyethylene terephthalate (PET) covered with the PPpX intermediate layer were improved compared to PET without PPpX on it. Due to the highly cross-linked network structure in the plasma polymer film, water vapor permeability of PET substrates with the PPpX intermediate layer of 75 nm was decreased compared to PET substrates without PPpX on it. FOLEDs with the PPpX intermediate layer showed improved optical and electrical characteristics as well as lifetimes than FOLEDs without the PPpX intermediate layer

Evaluation of methods for application of epitaxial layers of superconductor and buffer layers

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-06-01

The recent achievements in a number of laboratories of critical currents in excess of 1.0x10{sup 6} amp/cm{sup 2} at 77K in YBCO deposited over suitably textured buffer/substrate composites have stimulated interest in the potential applications of coated conductors at high temperatures and high magnetic fields. As of today, two different approaches for obtaining the textured substrates have been identified. These are: Los Alamos National Laboratory`s (LANL) ion-beam assisted deposition called IBAD, to obtain a highly textured yttria-stabilized zirconia (YSZ) buffer on nickel alloy strips, and Oak Ridge National Laboratory`s (ORNL) rolling assisted, bi-axial texturized substrate option called RABiTS. Similarly, based on the published literature, the available options to form High Temperature Superconductor (HTS) films on metallic, semi-metallic or ceramic substrates can be divided into: physical methods, and non-physical or chemical methods. Under these two major groups, the schemes being proposed consist of: - Sputtering - Electron-Beam Evaporation - Flash Evaporation - Molecular Beam Epitaxy - Laser Ablation - Electrophoresis - Chemical Vapor Deposition (Including Metal-Organic Chemical Vapor Deposition) - Sol-Gel - Metal-Organic Decomposition - Electrodeposition, and - Aerosol/Spray Pyrolysis. In general, a spool- to-spool or reel-to-reel type of continuous manufacturing scheme developed out of any of the above techniques, would consist of: - Preparation of Substrate Material - Preparation and Application of the Buffer Layer(s) - Preparation and Application of the HTS Material and Required Post-Annealing, and - Preparation and Application of the External Protective Layer. These operations would be affected by various process parameters which can be classified into: Chemistry and Material Related Parameters; and Engineering and Environmental Based Parameters. Thus, one can see that for successful development of the coated conductors manufacturing process, an

Studies on Ba(2)YNbO(6) Buffer Layers for Subsequent YBa(2)Cu(3)O(7-x) Film Growth

National Research Council Canada - National Science Library

Sathiraju, Srinivas; Barnes, Paul N; Varanasi, Chakrapani; Wheeler, Robert

2004-01-01

In this paper, we are reporting a dielectric oxide buffer Ba(2)YNbO(6) (BYNO) and its performance on various substrates for a potential buffer layer for the growth of YBa(2)Cu(3)O(7-x) (YBCO) coated conductors. Ba(2)YNbO(6...

Strontium Titanate Buffer Layers on Cu/33%Ni Substrates using a Novel Solution Chemistry

DEFF Research Database (Denmark)

Pallewatta, Pallewatta G A P; Yue, Zhao; Hui, Tian

2013-01-01

SrTiO3 is a widely studied perovskite material due to its advantages as a buffer template which can be simply applied between a metal substrate tape and a superconducting layer in 2G high temperature superconducting (HTS) tapes. In this study, heteroepitaxial SrTiO3 thin films were deposited on t...

Environmental Modeling, The Buffer Priority layers for Phosphorus / Sediment) Removal identify priority forest/grass buffer opportunities by subwatershed. Land use, hydrology, soil, and landscape characteristics were analyzed to rank buffer opportunities with high P/sed removal., Published in 2014, Smaller than 1:100000 scale, Maryland Department of Natural Resources (DNR).

Data.gov (United States)

NSGIC Education | GIS Inventory — Environmental Modeling dataset current as of 2014. The Buffer Priority layers for Phosphorus / Sediment) Removal identify priority forest/grass buffer opportunities...

Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

Energy Technology Data Exchange (ETDEWEB)

Shin, C.M.; Lee, J.Y.; Heo, J.H.; Park, J.H.; Kim, C.R. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-07-30

In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

Improved (0 0 1)-texture of FePt-C for heat-assisted magnetic recording media by insertion of Cr buffer layer

Energy Technology Data Exchange (ETDEWEB)

Shiroyama, T.; Wang, J.; Felicia, A.; Takahashi, Y.K.; Hono, K., E-mail: kazuhiro.hono@nims.go.jp

2017-06-15

Highlights: • Improvement of (0 0 1)-texture of prototype FePt-C granular films for heat heat assisted magnetic recording media. • Insertion of Cr buffer layer improves the crystallographic textures of the MgO underlayers, thereby reduces in-plane component in the FePt-C recording layer. • The growth in the grain size of the MgO underlayer as well as the (0 0 1)-texture of the MgO underlayer are the key factor in reducing the in-plane component in the FePt-C recording layer. - Abstract: FePt-C granular films deposited on MgO underlayers are the prototype media for heat-assisted magnetic recording. To reduce the in-plane magnetic component in the FePt-C media, we investigated the effect of Cr buffer layers on the crystallographic textures of the MgO underlayers and the resultant magnetic properties of the FePt-C layers. By growing a MgO underlayer on a Cr buffer layer, the (0 0 1) texture of the MgO underlayer is improved, on which the in-plane component of a FePt-C film is substantially reduced. We conclude that the growth in the grain size of the MgO underlayer is the key factor in reducing the in-plane component in the FePt-C recording layer.

Performance of strontium- and magnesium-doped lanthanum gallate electrolyte with lanthanum-doped ceria as a buffer layer for IT-SOFCs

Energy Technology Data Exchange (ETDEWEB)

Lee, Dokyol; Han, Ju-Hyeong; Kim, Eun-Gu [Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea); Song, Rak-Hyun; Shin, Dong-Ryul [Hydrogen and Fuel Cell Research Department, Korea Institute of Energy Research, 71-2 Jang-dong, Yuseong-gu, Daejeon 305-600 (Korea)

2008-10-15

La{sub 0.8}Sr{sub 0.2}Ga{sub 0.8}Mg{sub 0.2}O{sub 2.8} (LSGM8080) powder, showing the highest electrical conductivity among LSGMs of various compositions, is synthesized using the glycine nitrate process (GNP) and used as the electrolyte for an intermediate-temperature solid oxide fuel cell (IT-SOFC). The LDC (Ce{sub 0.55}La{sub 0.45}O{sub 1.775}) powder is synthesized by a solid-state reaction and employed as the material for a buffer layer to prevent the reaction between the anode and electrolyte materials. The LDC also serves as the skeleton material for the anode. An anode-supported single cell with an active area of 1 cm{sup 2} is constructed for performance evaluation. A single-cell test is performed at 750 and 800 C. The maximum power density of the cell 459 and 664 mW cm{sup -2} at 750 and 800 C, respectively. (author)

The stochastic nuclide transport model for buffer/backfill materials

International Nuclear Information System (INIS)

Ma Liping; Han Yongguo

2014-01-01

Currently, study on nuclide migration law in geological disposal repository of high level waste is assumed buffer/backfill layer to be continuous medium, utilized the continuity equation, equation of state, the equations of motion, etc, formed a set of theory and method to estimate nuclide concentration distribution in buffer/backfill layer, and provided an important basis for nuclide migration rules of repository. However, it is necessary to study the buffer/backfill layer microstructure and subtly describe the pore structure and fracture system of the buffer/backfill layer, and reflect the changes in connectivity and in different directions of the buffer/backfill layer. Through using random field theory, the nuclide transport for the buffer/backfill layer in geological disposal repository of nuclear waste is described in the paper. This paper mainly includes that, t represents the time, ξ t ⊂ Z d = d represents the integer lattice, Z represents collectivity integers, d = l, 2, 3, for instance, d = 2, Z d = {(m, n) : m, n ∈ Z} the state point of ξ t is typically considered to be occupied by the nuclide concentration values of the buffer/backfill layer, ξ t also represents random set in the diagram of two dimensional integer lattice, namely, t ∈ [0, T], {ξ t ,0 ≤ t ≤ ⊂ T} Consequently, according to the stochastic process obtained above, the changes of the nuclide concentration values of the buffer/backfill layer or the buffer/backfill laboratory materials in the repository with the time can be known. (authors)

Effect of plasma molybdenized buffer layer on adhesive properties of TiN film coated on Ti6Al4V alloy

Energy Technology Data Exchange (ETDEWEB)

Qin, Lin, E-mail: qinlin@tyut.edu.cn; Yi, Hong; Kong, Fanyou; Ma, Hua; Guo, Lili; Tian, Linhai; Tang, Bin

2017-05-01

Highlights: • A molybdenized layer was prepared as a buffer layer under TiN film on Ti6Al4V. • The molybdenized layer can enhance adhesion strength of PVD coatings effectively. • The duplex treated samples increase elastic energy ratio in the impact tests. • The enhancement attributes to the hardness improvement and inverted-S shape elastic modulus profile of the modified layer. - Abstract: Effect of molybdenized buffer layer on adhesion strength of TiN film on Ti6Al4V alloy was investigated. The buffer layer composed of a dense molybdenum deposition layer, a rapid drop zone and a slow fall zone was prepared using double glow plasma surface alloying technique. Scratch tests and low energy repeated impact tests were adopted to comparatively evaluate the duplex treated layers and the single TiN samples. The results show that the critical load was increased from 62 N for the single TiN film to over 100 N for the duplex treated layer. The volume of impact pit, formed in impact tests, of the single TiN samples is 9.15 × 10{sup 6} μm{sup 3}, and about 1.5 times than that of the duplex treated samples. The Leeb hardness values reveal that about 70% impact energy was transferred to the single TiN samples to generate permanent deformation, while that was only about 47% for the duplex treated samples. The mechanism of improving adhesion strength is attributed to synergistic effect due to an inverted-S shape elastic modulus distribution produced by the molybdenized layer.

In-situ laser processing and microstructural characteristics of YBa2Cu3O7-δ thin films on Si with TiN buffer layer

International Nuclear Information System (INIS)

Tiwari, P.; Zheleva, T.; Narayan, J.

1993-01-01

The authors have prepared high-quality superconducting YBa 2 Cu 3 O 7 -δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excimer laser ( | = 248 nm ) at substrate temperature of 650 C . Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (S E M), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with TiN parallel Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90-92K with T co (zero resistance temperature) of 84K. The authors have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed in detail

Improved tribological properties of TiC with porous nanostructured TiO{sub 2} intermediate layer

Energy Technology Data Exchange (ETDEWEB)

Shanaghi, Ali, E-mail: alishanaghi@gmail.com [Surface Engineering Laboratory, Materials Engineering Department, Faculty of Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran (Iran, Islamic Republic of); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Ahangarani, Shahrokh, E-mail: sh.ahangarani@gmail.com [Advanced Materials and Renewable Energies Department, Iranian Research Organization for Science and Technology, P.O. Box 15815-3538, Tehran (Iran, Islamic Republic of); Sabour Rouhaghdam, Ali Reza, E-mail: sabour01@modares.ac.ir [Surface Engineering Laboratory, Materials Engineering Department, Faculty of Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran (Iran, Islamic Republic of); Chu, Paul K., E-mail: paul.chu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

2011-12-15

Highlights: Black-Right-Pointing-Pointer The porous TiO{sub 2} nanoparticle coating is deposited as an intermediate layer on steel. Black-Right-Pointing-Pointer A homogenous and low friction TiC nanostructure coating is deposited by plasma CVD. Black-Right-Pointing-Pointer Intermediate layer can be determined the nucleation and growth of the TiC coating. Black-Right-Pointing-Pointer The porous interlayer improves the friction and wear of the TiC nanostructure coating. - Abstract: The mismatch in the thermal expansion coefficients between TiC coatings and steel substrates and residual stress in the TiC degrade the tribological properties. In this work, a porous nanostructured TiO{sub 2} coating is deposited as an intermediate layer on hot-work steel (H{sub 11}) before final deposition of the TiC film. This intermediate layer is expected to reduce the interfacial energy, decreases the thermal mismatch between TiC and steel, and improves the tribological properties. Grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and pin-on-disk are used to study the structure as well as tribological properties such as friction, wear, and hardness. Our results reveal that the porous TiO{sub 2} interlayer improves the friction, wear, hardness, and elastic modulus of the system.

Sm-doped CeO{sub 2} single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

Energy Technology Data Exchange (ETDEWEB)

Li, G.; Pu, M.H.; Sun, R.P.; Wang, W.T.; Wu, W.; Zhang, X.; Yang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)], E-mail: yzhao@home.swjtu.edu.cn

2008-10-20

An over 150 nm thick Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} (SCO) single buffer layer has been deposited on bi-axially textured NiW (2 0 0) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at T{sub c0} = 87 K as well as J{sub c}(0 T, 77 K) {approx} 1 MA/cm{sup 2}. These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO{sub 2} film, which renders it a promising candidate as single buffer layer for YBCO coated conductors.

Tandem organic light-emitting diodes with buffer-modified C60/pentacene as charge generation layer

Science.gov (United States)

Wang, Zhen; Zheng, Xin; Liu, Fei; Wang, Pei; Gan, Lin; Wang, Jing-jing

2017-09-01

Buffer-modified C60/pentacene as charge generation layer (CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes (OLEDs) with multiple identical emissive units and using buffer-modified C60/pentacene organic semiconductor heterojunction (OHJ) as CGL are demonstrated to exhibit better current density and brightness, compared with conventional single-unit devices. The current density and brightness both can be significantly improved with increasing the thickness of Al. However, excessive thickness of Al seriously decreases the transmittance of films and damages the interface. As a result, the maximum current efficiency of 1.43 cd·A-1 at 30 mA·cm-2 can be achieved for tandem OLEDs with optimal thickness of Al. These results clearly demonstrate that Cs2CO3/Al is an effective buffer for C60/pentacene-based tandem OLEDs.

Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

Science.gov (United States)

Moore, Andrew

Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of Cd

ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

Science.gov (United States)

Bhattacharya, Raghu N [Littleton, CO

2009-11-03

The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2Buffer Layers in Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Jiang Chunhua

2009-01-01

Full Text Available Abstract This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs. The nanowire films with the thick ZnO buffer layer (~0.8–1 μm thick can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2layer (~50 nm thick were improved by 3.9–12.5 and 2.4–41.7%, respectively. This can be attributed to the introduction of the compact TiO2layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film–electrolyte interface and the substrate–electrolyte interface.

High Performance Nano-Constituent Buffer Layer Thin Films to Enable Low Cost Integrated On-the-Move Communications Systems

National Research Council Canada - National Science Library

Cole, M. W; Nothwang, W. D; Hubbard, C; Ngo, E; Hirsch, S

2004-01-01

.... Utilizing a coplanar device design we successfully designed, fabricated, characterized, and optimized a high performance Ta2O5 thin film passive buffer layer on Si substrates, which will allow...

Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

NARCIS (Netherlands)

Plissard, S.R.; Coinon, C.; Androussi, Y.; Wallart, X.

2010-01-01

The strain relaxation in low mismatched InxAl1-xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first "strained

About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors

Directory of Open Access Journals (Sweden)

E Pankratov

2016-10-01

Full Text Available In this paper we introduce an approach to manufacture a heterobipolar transistors. Framework this approach we consider doping by diffusion or by ion implantation of required parts of a heterostructure with special configuration and optimization of annealing of dopant and/or radiation defects. In this case one have possibility to manufacture bipolar transistors, which include into itself p-n-junctions with higher sharpness and smaller dimensions. We also consider influence of presents of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in the considered transistors. An approach to decrease value of mismatch-induced stress has been considered.

Chemical-bath ZnO buffer layer for CuInS{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A.; Weber, M.; Scheer, R.; Lewerenz, H.J. [Hahn-Meitner-Institut, Abt. Grenzflaechen, Bereich Physikalische Chemie, Glienicker Strasse 100, D-14109 Berlin (Germany)

1998-07-13

ZnO buffer layers were grown by a chemical-bath deposition (CBD) in order to improve the interface quality in p-CuInS{sub 2} based solar cells, to improve the light transmission in the blue wavelength region, but also as an alternative to eliminate the toxic cadmium. The process consists of immersion of different substrates (glass, CIS) in a dilute solution of tetraamminezinc II, [Zn(NH{sub 2}){sub 4}]{sup 2+}, complex at 60-95C. During the growth process, a homogeneous growth mechanism which proceeds by the sedimentation of a mixture of ZnO and Zn(OH){sub 2} clusters formed in solution, competes with the heterogeneous growth mechanism. The mechanism consists of specific adsorption of a complex Zn(II) followed by a chemical reaction. The last process of growth results in thin, hard, adherent and specularly reflecting films. The characterization of the deposited CBD-ZnO layers was performed by X-ray diffraction (XRD), optical transmittance, scanning electron microscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The as-deposited films on glass show hexagonal zincite structure with two preferred orientations (1 0 0) and (1 0 1). High optical transmittance up to 80% in the near-infrared and part of the visible region was observed. The low growth rate of the films on CIS suggests an atomic layer-by-layer growth process.The device parameters and performance are compared to heterojunction with a standard CdS buffer layer

Investigations into alterntive substrate, absorber, and buffer layer processing for Cu(In,Ga)Se{sub 2}-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Tuttle, J.R.; Berens, T.A.; Keane, J. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

High-performance Cu(In,Ga)Se{sub 2}(CIGS)-based solar cells are presently fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na{sub 2}S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga){sub y}Se buffer layers contribute to cell performance above 10. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.

Numerical analysis of the influence of buffer layer thickness on the residual stresses in YBCO/La2Zr2O7/Ni superconducting materials

International Nuclear Information System (INIS)

Celik, Erdal; Sayman, Onur; Karakuzu, Ramazan; Ozman, Yilmaz

2007-01-01

The present paper addresses a numerical investigation of the influence of buffer layer thickness on the residual stress in YBCO/La 2 Zr 2 O 7 /Ni architectured materials under cryogenic conditions by using classical lamination theory (CLT) and finite element method (FEM) for coated conductor applications. YBCO/La 2 Zr 2 O 7 multilayer films were fabricated on Ni tape substrate using reel-to-reel sol-gel and pulse laser deposition (PLD) systems. The microstructural evolution of high temperature superconducting YBCO film and buffer layers with La 2 Zr 2 O 7 configuration grown on textured Ni tape substrates was investigated by using a scanning electron microscope (SEM). Thermal stress analysis of YBCO/La 2 Zr 2 O 7 /Ni multilayer sample was performed by using CLT in the temperature range of 298-175 K in liquid helium media. The YBCO/La 2 Zr 2 O 7 /Ni sample strip was solved by using FEM for linear or nonlinear cases in the temperature range of 298-3 K in liquid helium media. SEM observations revealed that crack-free, pinhole-free, continuous superconducting film and buffer layer were obtained by sol-gel and PLD systems. In addition to microstructural observations, it was found that the largest compressive stresses and failure occur in La 2 Zr 2 O 7 buffer layer due to its smallest thermal expansion coefficient. The thickness of La 2 Zr 2 O 7 buffer layer affects the failure. The stress component of σ x is the smallest in Ni tape substrate due to its largest thickness

The Transient Intermediate Plexiform Layer, a Plexiform Layer-like Structure Temporarily Existing in the Inner Nuclear Layer in Developing Rat Retina.

Science.gov (United States)

Park, Hyung Wook; Kim, Hong-Lim; Park, Yong Soo; Kim, In-Beom

2018-02-01

The retina is a highly specialised part of the brain responsible for visual processing. It is well-laminated; three layers containing five different types of neurons are compartmentalised by two synaptic layers. Among the retinal layers, the inner nuclear layer (INL) is composed of horizontal, bipolar, and amacrine cell types. Bipolar cells form one sublayer in the distal half of the IPL, while amacrine cells form another sublayer in the proximal half, without any border-like structure. Here, we report that a plexiform layer-like structure exists temporarily in the border between the bipolar and amacrine sublayers in the INL in the rat retina during retinal development. This transient intermediate plexiform layer (TIPL) appeared at postnatal day (PD) 7 and then disappeared around PD 12. Most apoptotic cells in the INL were found near the TIPL. These results suggest that the TIPL may contribute to the formation of sublayers and the cell number limit in the INL.

Wearable electronics formed on intermediate layer on textiles

KAUST Repository

Hussain, Muhammad Mustafa

2017-07-27

One manner of producing more desirable clothing with electronic capabilities is to manufacture electronics, such as the charging wires or devices themselves, directly onto the textile materials. Textile materials generally do not support the manufacturing of electronic devices, in part because the surface of the textile is too rough for electronic devices or the processes used to manufacturing electronic devices. An intermediate layer (204) may be placed on the textile material (202) to reduce the roughness of the surface of the textile material and provide other beneficial characteristics for the placement of electronic devices (206) directly on the textile material.

Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

2012-01-01

a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

Atmospheric spatial atomic-layer-deposition of Zn(O, S) buffer layer for flexible Cu(In, Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

NARCIS (Netherlands)

Frijters, C.H.; Bolt, P.J.; Poodt, P.W.G.; Knaapen, R.; Brink, J. van den; Ruth, M.; Bremaud, D.; Illiberi, A.

2016-01-01

In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale

Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Shang, X Z; Wu, S D; Liu, C; Wang, W X; Guo, L W; Huang, Q; Zhou, J M

2006-01-01

Low-temperature step-graded InAlAs metamorphic buffer layers on GaAs substrate grown by molecular beam epitaxy were investigated. The strain relaxation and the composition of the top InAlAs layer were determined by high-resolution triple-axis x-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed. Surface morphology was observed by reflection high-energy electron diffraction pattern and atomic force microscopy. Under a selected range of growth parameters, the root mean square surface roughness of the sample grown at 380 deg. C is 0.802 nm, which has the smallest value compared with those of other samples. Furthermore, The ω-2θ and ω scans of the triple-axis x-ray diffraction, and photoluminescence show the sample grown at 380 deg. C has better crystalline quality. With decreasing As overpressure at this growth temperature, crystalline quality became poor and could not maintain two dimensional growth with increasing overpressure. The carrier concentrations and Hall mobilities of the InAlAs/ InGaAs/GaAs MM-HEMT structure on low-temperature step-graded InAlAs metamorphic buffer layers grown in optimized conditions are high enough to make devices

Use of different Zn precursors for the deposition of Zn(S,O) buffer layers by chemical bath for chalcopyrite based Cd-free thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Saez-Araoz, R.; Lux-Steiner, M.C. [Hahn Meitner Institut, Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany); Ennaoui, A.; Kropp, T.; Veryaeva, E. [Hahn Meitner Institut, Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co. KG, Munich (Germany)

2008-10-15

Progress in fabricating Cu(In,Ga)(S,Se){sub 2} (CIGSSe) solar cells with Zn(S,O) buffer layers prepared by chemical bath deposition (CBD) is discussed. The effect of different Zn salt precursors on solar cell device performance is investigated using production scale CIGSSe absorbers provided by AVANCIS GmbH and Co. KG. The CBD process has been developed at the Hahn-Meitner-Institut (HMI) using zinc nitrate, zinc sulphate or zinc chloride as zinc precursor. An average efficiency of 14.2{+-}0.8% is obtained by using one-layer CBD Zn(S,O) The dominant recombination path for well performing solar cells is discussed based on the results obtained from temperature dependent J(V) analysis. The structure and morphology of buffer layers deposited using zinc nitrate and zinc sulphate has been studied by means of transmission electron micrographs of glass/Mo/CIGSSe/Zn(S,O) structures. Results show a conformal coverage of the absorber by a Zn(S,O) layer of 15-25 nm consisting of nanocrystals with radii of {proportional_to}5 nm. XAES analysis of the buffer layer reveals a similar surface composition for buffer layers deposited with zinc nitrate and zinc sulphate. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells

Directory of Open Access Journals (Sweden)

A. Le Donne

2015-01-01

Full Text Available Cu2ZnSnS4 (CZTS absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, GaSe2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.

Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

International Nuclear Information System (INIS)

Ruterana, P.; Abouzaid, M.; Gloux, F.; Maciej, W.; Doualan, J.L.; Drago, M.; Schmidtling, T.; Pohl, U.W.; Richter, W.

2006-01-01

In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparison of different photoresist buffer layers in SPR sensors based on D-shaped POF and gold film

Science.gov (United States)

Cennamo, Nunzio; Pesavento, Maria; De Maria, Letizia; Galatus, Ramona; Mattiello, Francesco; Zeni, Luigi

2017-04-01

A comparative analysis of two optical fiber sensing platforms is presented. The sensors are based on surface plasmon resonance (SPR) in a D-shaped plastic optical fiber (POF) with a photoresist buffer layer between the exposed POF core and the thin gold film. We show how the sensor's performances change when the photoresist layer changes. The photoresist layers proposed in this analysis are SU-8 3005 and S1813. The experimental results are congruent with the numerical studies and it is instrumental for chemical and bio-chemical applications. Usually, the photoresist layer is required in order to increase the performance of the SPR-POF sensor.

Charge recombination reduction in dye-sensitized solar cells by means of an electron beam-deposited TiO2 buffer layer between conductive glass and photoelectrode

International Nuclear Information System (INIS)

Manca, Michele; Malara, Francesco; Martiradonna, Luigi; De Marco, Luisa; Giannuzzi, Roberto; Cingolani, Roberto; Gigli, Giuseppe

2010-01-01

A thin anatase titanium dioxide compact film was deposited by electron beam evaporation as buffer layer between the conductive transparent electrode and the porous TiO 2 -based photoelectrode in dye-sensitized solar cells. The effect of such a buffer layer on the back transfer reaction of electrons to tri-iodide ions in liquid electrolyte-based cells has been studied by means of both electrochemical impedance spectroscopy and open circuit photovoltage decay analysis. The influence of the thickness has been also investigated and an increment in overall quantum conversion efficiency η as high as + 31% with respect to the standard cell - fabricated onto an uncoated conductive glass - has been revealed in the case of a 120 nm thick buffer layer.

Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers

Directory of Open Access Journals (Sweden)

Chunfu Zhang

2016-01-01

Full Text Available Efficient inverted low-bandgap polymer solar cells with an aqueous solution processed low-temperature ZnO buffer layer have been investigated. The low-bandgap material PTB-7 is employed so that more solar light can be efficiently harvested, and the aqueous solution processed ZnO electron transport buffer layer is prepared at 150°C so that it can be compatible with the roll-to-roll process. Power conversion efficiency (PCE of the inverted device reaches 7.12%, which is near the control conventional device. More importantly, the inverted device shows a better stability, keeping more than 90% of its original PCE after being stored for 625 hours, while PCE of the conventional device is only 75% of what it was. In addition, it is found that the ZnO thin film annealed in N2 can obviously increase PCE of the inverted device further to 7.26%.

LaNiO3 buffer layers for high critical current density YBa2Cu3O7-δ and Tl2Ba2CaCu2O8-δ films

International Nuclear Information System (INIS)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-01-01

We demonstrate high critical current density superconducting films of YBa 2 Cu 3 O 7-δ (YBCO) and Tl 2 Ba 2 CaCu 2 O 8-δ (Tl-2212) using LaNiO 3 (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J c (5 K, H=0) than films grown directly on a bare LaAlO 3 substrate. YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J c at all temperatures and fields compared to those grown on bare LaAlO 3 , correlating to both a-axis grain and nonsuperconducting phase formation. LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films in coated conductor applications. copyright 1999 American Institute of Physics

LaNiO3 Buffer Layers for High Critical Current Density YBa2Cu3O7δ and Tl2Ba2CaCu2O8δ Films

International Nuclear Information System (INIS)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.-T.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-01-01

We demonstrate high critical current density superconducting films of YBa 2 Cu 3 O 7-δ (YBCO) and Tl 2 Ba 2 CaCu 2 O 8-δ (Tl-2212) using LaNiO 3 (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J c (5K, H=0) than films grown directly on a bare LaAlO 3 substrate. It is noteworthy that YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J c at all temperatures and fields compared to those grown on bare LaAlO 3 , correlating to both a-axis grain and nonsuperconducting phase formation. With additional optimization, LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films, perhaps ideally suited for coated conductor applications

Fabrication of the cube textured NiO buffer layer by line-focused infrared heating for coated conductor application

International Nuclear Information System (INIS)

Chung, Jun-Ki; Kim, Won-Jeong; Tak, Jinsung; Kim, Cheol Jin

2007-01-01

Epitaxial growth of NiO on the bi-axially textured Ni-3 at.%W (Ni-3W) substrate as seed layer for coated conductor were studied. The bi-axially textured NiO was formed on the Ni-3W tapes using a line-focused infrared heater by oxidizing the surface of the substrate at 800-950 deg. C for 15-120 s in oxygen atmosphere. The thickness of the NiO layer could be controlled by changing heat-treatment, which was estimated as approximately 200-500 nm in the cross-sectional SEM micrographs of the NiO/Ni template. This thickness is enough to block the diffusion of the Ni in the substrate to the superconducting layer. The samples showed strong texture development of NiO layer. The sample oxidized at 900 deg. C with the tape transferring speed of 30 mm/h exhibited ω-scan full width at half maximum (FWHM) values for Ni-3W(2 0 0) and NiO(2 0 0) were 3.97 deg., and 3.67 deg., and φ-scan FWHM values for Ni-3W(1 1 1) and NiO(1 1 1) were 9.58 deg., and 8.79 deg., respectively. Also, the (1 1 1) pole-figure of the NiO buffer layer showed the good symmetry of the four peaks, securing the epitaxial growth of the buffer layers on the NiO layer. Also NiO layer exhibited root-mean-square roughness value of 39 nm by AFM (10 x 10 μm) investigation

Photovoltaic Properties in Interpenetrating Heterojunction Organic Solar Cells Utilizing MoO3 and ZnO Charge Transport Buffer Layers

Science.gov (United States)

Hori, Tetsuro; Moritou, Hiroki; Fukuoka, Naoki; Sakamoto, Junki; Fujii, Akihiko; Ozaki, Masanori

2010-01-01

Organic thin-film solar cells with a conducting polymer (CP)/fullerene (C60) interpenetrating heterojunction structure, fabricated by spin-coating a CP onto a C60 deposit thin film, have been investigated and demonstrated to have high efficiency. The photovoltaic properties of solar cells with a structure of indium-tin-oxide/C60/poly(3-hexylthiophene) (PAT6)/Au have been improved by the insertion of molybdenum trioxide (VI) (MoO3) and zinc oxide charge transport buffer layers. The enhanced photovoltaic properties have been discussed, taking into consideration the ground-state charge transfer between PAT6 and MoO3 by measurement of the differential absorption spectra and the suppressed contact resistance at the interface between the organic and buffer layers. PMID:28883360

Photovoltaic Properties in Interpenetrating Heterojunction Organic Solar Cells Utilizing MoO3 and ZnO Charge Transport Buffer Layers

Directory of Open Access Journals (Sweden)

Tetsuro Hori

2010-11-01

Full Text Available Organic thin-film solar cells with a conducting polymer (CP/fullerene (C60 interpenetrating heterojunction structure, fabricated by spin-coating a CP onto a C60 deposit thin film, have been investigated and demonstrated to have high efficiency. The photovoltaic properties of solar cells with a structure of indium-tin-oxide/C60/ poly(3-hexylthiophene (PAT6/Au have been improved by the insertion of molybdenum trioxide (VI (MoO3 and zinc oxide charge transport buffer layers. The enhanced photovoltaic properties have been discussed, taking into consideration the ground-state charge transfer between PAT6 and MoO3 by measurement of the differential absorption spectra and the suppressed contact resistance at the interface between the organic and buffer layers.

Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

Science.gov (United States)

Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

2017-07-01

The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

Effects of TiO{sub 2} buffer layer on the photoelectrochemical properties of TiO{sub 2} Nano rods grown by modified chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Lee, Tae-hyun; Ha, Jin-wook; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

2015-08-15

In this study, we grew TiO{sub 2} nano rods on TiO{sub 2}-film buffered FTO substrate using modified chemical bath deposition (M-CBD). The TiO{sub 2} buffer layer was grown by spin coating method with different RPM (revolutions per minute) values and deposition cycles. We investigated the effects of the RPM values and the deposition cycles on the morphological, structural and photoelectrochemical properties of TiO{sub 2} nano rods. In this work, we have also found that the morphological and structural properties of TiO{sub 2} nano rods affected the photoelectrochemical properties of TiO{sub 2} nano rods. And the maximum photocurrent density of 0.34 mA/cm{sup 2} at 0.6V (vs.SCE) was obtained from the buffer layer deposition process condition of 4,000 RPM and two-times buffer layer depositions.

Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

International Nuclear Information System (INIS)

Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

2009-01-01

The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

Chemical bath deposition of thin semiconductor films for use as buffer layers in CuInS2 thin film solar cells

International Nuclear Information System (INIS)

Kaufmann, C.A.

2002-01-01

A CulnS 2 thin film solar cell is a multilayered semiconductor device. The solar cells discussed have a layer sequence Mo/CulnS 2 /buffer/i-ZnO/ZnO:Ga, where a heterojunction establishes between the p-type absorber and the n-type front contact. Conventionally the buffer consists of CdS, deposited by chemical bath deposition (CBD). Apart from providing process oriented benefits the buffer layer functions as a tool for engineering the energy band line-up at the heterojunction interface. Motivated through environmental concern and EU legislation it is felt necessary to substitute this potentially toxic layer by an alternative, Cd-free component. This thesis investigates the suitability of various Zn- and In-compounds, in particular In(OH,O) x S y , as alternative buffer layer materials using CBD. Initial experiments were carried out depositing Zn-based compounds from aqueous solutions. Characterization of the layers, the solution and the processed solar cells was performed. This thesis focuses on the investigation of the CBD process chemistry for the deposition of In-compound thin films. A careful study of the morphology and composition of the deposited thin films was conducted using electron microscopy (SEM, HREM), elastic recoil detection analysis, X-ray photoelectron spectroscopy and optical transmission spectroscopy. This allowed conclusions concerning the nucleation and film growth mechanism from the chemical bath. Connections between bath chemistry, different growth phases, layer morphology and solar cell performance were sought and an improved deposition process was developed. As a result, Cd-free CulnS 2 thin film solar cells with efficiencies of up to 10.6%) (total area) could be produced. Overall the substitution of CdS is shown to be possible by different alternative compounds, such as Zn(OH,O) x S y or In(OH,O) x S y . In the case of In(OH,O) x S y , an understanding of the CBD process and the effect of different growth phases on the resulting solar cell

Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

OpenAIRE

Wang Lan; Lin Xianzhong; Ennaoui Ahmed; Wolf Christian; Lux-Steiner Martha Ch.; Klenk Reiner

2016-01-01

We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating ...

LaNiO(3) Buffer Layers for High Critical Current Density YBa(2)Cu(3)O(7-delta) and Tl(2)Ba(2)CaCu(2)O(8-delta) Films

Energy Technology Data Exchange (ETDEWEB)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.-T.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-08-24

We demonstrate high critical current density superconducting films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8{minus}{delta}} (Tl-2212) using LaNiO{sub 3} (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J{sub c} (5K, H=0) than films grown directly on a bare LaAlO{sub 3} substrate. It is noteworthy that YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J{sub c} at all temperatures and fields compared to those grown on bare LaAlO{sub 3}, correlating to both a-axis grain and nonsuperconducting phase formation. With additional optimization, LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films, perhaps ideally suited for coated conductor applications.

Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Wu, Jia-Ling; Lin, Han-Yu; Su, Bo-Yuan; Chen, Yu-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liu, Ssu-Yin [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Chang, Chia-Chiang; Wu, Chin-Jyi [Industrial Technology Research Institute, Mechanical and Systems Research Laboratories, Hsinchu 310, Taiwan (China)

2014-04-01

Highlights: • The electrodes of bi-layer GZO/ ZnO and single-layer GZO in α-IGZO TFT were compared. • The TFT performances of two different structures were systematically investigated. • The bi-layer GZO/100-nm ZnO S/D electrodes showed the better TFT device properties. - Abstract: In this research, top-gate bottom-contact thin-film transistors (TFTs) made with amorphous indium gallium zinc oxide (α-IGZO) active layers were grown using the radio-frequency sputtering technique. Two kinds of source and drain (S/D) electrodes, namely bi-layer GZO/100-nm ZnO buffer layer/Corning 1737 and single-layer GZO/Corning 1737, used in the TFT devices and the electric characteristics of the devices were compared. To explain the differences in the TFT performances with these different S/D electrodes, X-ray reflectivity (XRR) and contact angles were measured. The α-IGZO TFT with the bi-layer GZO/100-nm ZnO buffer layer structure as S/D electrodes exhibited superior device performance compared to that of the TFT with a single-layer GZO structure, with a higher thin film density (5.94 g/cm{sup 3}), lower surface roughness (0.817 nm), and larger surface energy (62.07 mJ/m{sup 2}) and better adhesion properties of neighboring α-IGZO films. In addition, the mechanisms responsible for the GZO/100-nm ZnO buffer layer/Corning 1737 structure S/D electrodes improving the device characteristics were systematically investigated. The α-IGZO TFT saturation mobility, subthreshold voltage, on/off current ratio, and the trap density of the GZO/100-nm ZnO buffer layer/Corning 1737 S/D electrodes were 13.5 cm{sup 2} V{sup −1} S{sup −1}, 0.43 V/decade, 3.56 × 10{sup 7}, and 5.65 × 10{sup 12} eV{sup −1} cm{sup −2}, respectively, indicating the potential of this bi-layer structure to be applied to large-area flat-panel displays.

Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

International Nuclear Information System (INIS)

Wu, Jia-Ling; Lin, Han-Yu; Su, Bo-Yuan; Chen, Yu-Cheng; Chu, Sheng-Yuan; Liu, Ssu-Yin; Chang, Chia-Chiang; Wu, Chin-Jyi

2014-01-01

Highlights: • The electrodes of bi-layer GZO/ ZnO and single-layer GZO in α-IGZO TFT were compared. • The TFT performances of two different structures were systematically investigated. • The bi-layer GZO/100-nm ZnO S/D electrodes showed the better TFT device properties. - Abstract: In this research, top-gate bottom-contact thin-film transistors (TFTs) made with amorphous indium gallium zinc oxide (α-IGZO) active layers were grown using the radio-frequency sputtering technique. Two kinds of source and drain (S/D) electrodes, namely bi-layer GZO/100-nm ZnO buffer layer/Corning 1737 and single-layer GZO/Corning 1737, used in the TFT devices and the electric characteristics of the devices were compared. To explain the differences in the TFT performances with these different S/D electrodes, X-ray reflectivity (XRR) and contact angles were measured. The α-IGZO TFT with the bi-layer GZO/100-nm ZnO buffer layer structure as S/D electrodes exhibited superior device performance compared to that of the TFT with a single-layer GZO structure, with a higher thin film density (5.94 g/cm 3 ), lower surface roughness (0.817 nm), and larger surface energy (62.07 mJ/m 2 ) and better adhesion properties of neighboring α-IGZO films. In addition, the mechanisms responsible for the GZO/100-nm ZnO buffer layer/Corning 1737 structure S/D electrodes improving the device characteristics were systematically investigated. The α-IGZO TFT saturation mobility, subthreshold voltage, on/off current ratio, and the trap density of the GZO/100-nm ZnO buffer layer/Corning 1737 S/D electrodes were 13.5 cm 2 V −1 S −1 , 0.43 V/decade, 3.56 × 10 7 , and 5.65 × 10 12 eV −1 cm −2 , respectively, indicating the potential of this bi-layer structure to be applied to large-area flat-panel displays

Deuterium markers in CdS and Zn(O,S) buffer layers deposited by solution growth for Cu(In,Ga)Se{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Witte, Wolfram; Eicke, Axel; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany); Souza, Roger A. de; Martin, Manfred [Institute of Physical Chemistry, RWTH Aachen University (Germany)

2017-12-15

This contribution describes an easy and cheap approach to introduce deuterium (D) as an isotopic marker into the commonly used buffer layer materials CdS and Zn(O,S) for Cu(In,Ga)Se{sub 2} (CIGS) thin-film solar cells. D was successfully incorporated during the growth of Zn(O,S) and CdS buffer layers by chemical bath deposition (CBD) with D{sub 2}O. CIGS solar cells prepared with D-containing buffers grown by CBD exhibit power conversion efficiencies above 16%, that is, the D content has no detrimental effect on the performance or other solar cell parameters of the devices. With depth profiles obtained by time-of-flight secondary ion mass spectrometry (ToF-SIMS) we clearly detect the intentionally incorporated D within the solution-grown Zn(O,S) buffer. Assuming that D is present as OD, we compare the amount of OD within the Zn(O,S) layer with the amount of OH on the surface of the subsequent sputtered (Zn,Mg)O layer. Possible applications and future experiments of the method inserting isotopic markers such as D in functional layers of chalcopyrite-type thin-film solar cells and beyond are discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

Science.gov (United States)

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-09-02

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

Growth of thick La{sub 2}Zr{sub 2}O{sub 7} buffer layers for coated conductors by polymer-assisted chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xin, E-mail: xzhang@my.swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Xia, Yudong [State Key Lab of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Guo, Chunsheng [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhang, Yong [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, Han [Department of Physics, Peking University, Beijing 100871 (China)

2015-06-15

Highlights: • We develops a low-cost and high-efficient technology of fabricating LZO buffer layers. • Sufficient thickness LZO buffer layers have been obtained on NiW (2 0 0) alloy substrate. • Highly biaxially textured YBCO thin film has been deposited on LZO/NiW. - Abstract: La{sub 2}Zr{sub 2}O{sub 7} (LZO) epitaxial films have been deposited on LaAlO{sub 3} (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm{sup 2} at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors.

High efficiency Cu(In,Ga)Se{sub 2} thin film solar cells without intermediate buffer layers

Energy Technology Data Exchange (ETDEWEB)

Ramanathan, K.; Wiesner, H.; Asher, S.; Niles, D.; Bhattacharya, R.N.; Keane, J.; Contreras, M.A.; Noufi, R. [National Renewable Energy Lab., Golden, CO (United States). Electronic Materials and Devices Div.

1998-09-01

The nature of the interface between CuInGaSe{sub 2} (CIGS) and the chemical bath deposited CdS layer has been investigated. The authors show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up an interfacial reaction with the possibility of an ion exchange occurring between Cd and Cu. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. The authors suggest that this aspect might be more important than the CdS layer in the formation of the junction. It is quite possible that the CdS/CuInSe{sub 2} device is a buried, shallow junction with a CdS window layer, rather than a heterojunction between CdS and CIGS. The authors use these ideas to develop methods for fabricating diodes without CdS or Cd.

Buffer-regulated biocorrosion of pure magnesium.

Science.gov (United States)

Kirkland, Nicholas T; Waterman, Jay; Birbilis, Nick; Dias, George; Woodfield, Tim B F; Hartshorn, Richard M; Staiger, Mark P

2012-02-01

Magnesium (Mg) alloys are being actively investigated as potential load-bearing orthopaedic implant materials due to their biodegradability in vivo. With Mg biomaterials at an early stage in their development, the screening of alloy compositions for their biodegradation rate, and hence biocompatibility, is reliant on cost-effective in vitro methods. The use of a buffer to control pH during in vitro biodegradation is recognised as critically important as this seeks to mimic pH control as it occurs naturally in vivo. The two different types of in vitro buffer system available are based on either (i) zwitterionic organic compounds or (ii) carbonate buffers within a partial-CO(2) atmosphere. This study investigated the influence of the buffering system itself on the in vitro corrosion of Mg. It was found that the less realistic zwitterion-based buffer did not form the same corrosion layers as the carbonate buffer, and was potentially affecting the behaviour of the hydrated oxide layer that forms on Mg in all aqueous environments. Consequently it was recommended that Mg in vitro experiments use the more biorealistic carbonate buffering system when possible.

Spray-Pyrolyzed Three-Dimensional CuInS2 Solar Cells on Nanocrystalline-Titania Electrodes with Chemical-Bath-Deposited Inx(OH)ySz Buffer Layers

Science.gov (United States)

Nguyen, Duy-Cuong; Mikami, Yuki; Tsujimoto, Kazuki; Ryo, Toshihiro; Ito, Seigo

2012-10-01

Three-dimensional (3D) compound solar cells with the structure of plates> have been fabricated by spray pyrolysis deposition of CuInS2 and chemical-bath deposition of Inx(OH)ySz for the light absorber and buffer layer, respectively. The effect of deposition and annealing conditions of Inx(OH)ySz on the photovoltaic properties of 3D CuInS2 solar cells was investigated. Inx(OH)ySz annealed in air ambient showed a better cell performance than those annealed in nitrogen ambient and without annealing. The improvement of the performance of cells with Inx(OH)ySz buffer layers annealed in air ambient is due to the increase in oxide concentration in the buffer layers [confirmed by X-ray photoelectron spectroscopy (XPS) measurement]. Among cells with Inx(OH)ySz buffer layers deposited for 1, 1.5, 1.75, and 2 h, that with Inx(OH)ySz deposited for 1.75 h showed the best cell performance. The best cell performance was observed for Inx(OH)ySz deposited for 1.75 h with annealing at 300 °C for 30 min in air ambient, and cell parameters were 22 mA cm-2 short-circuit photocurrent density, 0.41 V open-circuit voltage, 0.35 fill factor, and 3.2% conversion efficiency.

Intermediate layer thickness dependence on switching field distribution in perpendicular recording media

International Nuclear Information System (INIS)

Sbiaa, R.; Gandhi, R.; Srinivasan, K.; Piramanayagam, S.N.; Seoh, R.M.

2009-01-01

The effect of intermediate layer (IL) thickness on crystallographic texture and magnetic properties of CoCrPtSiO 2 granular perpendicular recording media was investigated with switching field distribution (SFD) as the focus. Even though the c-axis orientation of the Co-based recording layer (RL) broadens with the reduction of IL thickness, the SFD becomes narrower. This result demonstrates that the intrinsic SFD is not directly dependent on c-axis orientation of the recording layer but instead dependent on the magnitude of exchange coupling. It is thus possible to have a medium with thin IL and narrow SFD. This is desirable for bit-patterned media (BPM), where highly exchange-coupled grains are required.

Influence of laser sputtering parameters on orientation of cerium oxide buffer layer on sapphire and properties of YBa2Cu3Ox superconducting film

International Nuclear Information System (INIS)

Mozhaev, P.B.; Ovsyannikov, G.A.; Skov, J.L.

1999-01-01

Effect of laser sputtering parameters on crystalline properties of CeO 2 buffer layers grown on (1102) orientation sapphire substrate and on properties of YBa 2 Cu 3 O x superconducting thin films was studied. It was shown that depending on the sputtering conditions one might observe growth of CeO 2 (100) and (111) orientations. Varying heater temperature, chamber pressure and density of laser ray energy on the target one managed to obtain mono-oriented buffer layer of the desired orientation [ru

Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Storm, D.F.; Katzer, D.S.; Binari, S.C.; Shanabrook, B.V.; Zhou Lin; Smith, David J.

2004-01-01

AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm 2 /V s to greater than 1450 cm 2 /V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleation layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

Science.gov (United States)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

The growth of various buffer layer structures and their influence on the quality of (CdHg)Te epilayers

CSIR Research Space (South Africa)

Gouws, GJ

1993-05-01

Full Text Available The suitability of various buffer layer structures on (100) GaAs for (CdHg)Te growth by organometallic vapour phase epitaxy (OMVPE) was investigated. The preferred epitaxial orientation of (100) GaAs/ (lll) CdTe was found to be unsuitable due...

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

International Nuclear Information System (INIS)

Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

2014-01-01

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Compact hematite buffer layer as a promoter of nanorod photoanode performances

Science.gov (United States)

Milan, R.; Cattarin, S.; Comisso, N.; Baratto, C.; Kaunisto, K.; Tkachenko, N. V.; Concina, I.

2016-10-01

The effect of a thin α-Fe2O3 compact buffer layer (BL) on the photoelectrochemical performances of a bare α-Fe2O3 nanorods photoanode is investigated. The BL is prepared through a simple spray deposition onto a fluorine-doped tin oxide (FTO) conducting glass substrate before the growth of a α-Fe2O3 nanorods via a hydrothermal process. Insertion of the hematite BL between the FTO and the nanorods markedly enhances the generated photocurrent, by limiting undesired losses of photogenerated charges at the FTO||electrolyte interface. The proposed approach warrants a marked improvement of material performances, with no additional thermal treatment and no use/dispersion of rare or toxic species, in agreement with the principles of green chemistry.

Large area flexible polymer solar cells with high efficiency enabled by imprinted Ag grid and modified buffer layer

International Nuclear Information System (INIS)

Lu, Shudi; Lin, Jie; Liu, Kong; Yue, Shizhong; Ren, Kuankuan; Tan, Furui; Wang, Zhijie; Jin, Peng; Qu, Shengchun; Wang, Zhanguo

2017-01-01

To take a full advantage of polymer semiconductors on realization of large-area flexible photovoltaic devices, herein, we fabricate polymer solar cells on the basis of polyethylene terephthalate (PET) with imprinted Ag grid as transparent electrode. The key fabrication procedure is the adoption of a modified PEDOT:PSS (PH1000) solution for spin-coating the buffer layer to form a compact contact with the substrate. In comparison with the devices with intrinsic PEDOT:PSS buffer layer, the advanced devices present a much higher efficiency of 6.51%, even in a large device area of 2.25 cm"2. Subsequent characterizations reveal that such devices show an impressive performance stability as the bending angle is enlarged to 180° and bending time is up to 1000 cycles. Not only providing a general methodology to construct high efficient and flexible polymer solar cells, this paper also involves deep insights on device working mechanism in bending conditions.

High dielectric constant and energy density induced by the tunable TiO2 interfacial buffer layer in PVDF nanocomposite contained with core-shell structured TiO2@BaTiO3 nanoparticles

Science.gov (United States)

Hu, Penghao; Jia, Zhuye; Shen, Zhonghui; Wang, Peng; Liu, Xiaoru

2018-05-01

To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core-shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core-shell structured TO@BT nanoparticles with crystalline TiO2 buffer layer coated on BaTiO3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3-5 nm buffer layer of TO is effective in increasing both the ε and Eb in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core-shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.

Formation of accessory mineral bed layers during erosion of bentonite buffer material

International Nuclear Information System (INIS)

Schatz, Timothy; Kanerva, Noora

2012-01-01

Document available in extended abstract form only. dilute groundwater at a transmissive fracture interface, accessory phases within bentonite, such as quartz, feldspar, etc., might remain behind and form a filter bed or cake. As more and more montmorillonite is lost, the thickness of the accessory mineral bed increases and the continued transport of montmorillonite slows and possibly stops if the porosity of the filter bed is sufficiently compressed. Alternatively or concurrently, as the accessory mineral filter bed retains montmorillonite colloids, a filter cake composed of montmorillonite itself may be formed. Ultimately, depending on their extent, properties, and durability, such processes may provide the bentonite buffer system with an inherent, self-filtration mechanism which serves to limit the effects of colloidal erosion. A conceptual view of bentonite buffer extrusion and erosion in an intersecting fracture with formation of an accessory mineral filter bed and montmorillonite filter cake is presented in Figure 1. Due to the swelling pressure of the bentonite buffer, the situation described in Figure 1 may be analogous to that of the case of pressure filtration where a filter cake is formed by pressing a suspension through a filter medium and, by a mechanism known as expression, the filter cake is compressed by direct contact with a solid surface resulting in a reduction of its porosity. In order to examine whether the erosion of bentonite material through contact with dilute groundwater at a transmissive fracture interface could intrinsically result in 1) the formation of an accessory mineral filter bed and cake and/or 2) filter caking of montmorillonite itself, a series of laboratory tests were performed in a flow-through, horizontal, 1 mm aperture, artificial fracture system. Bentonite buffer material was simulated by using mixtures (75/25 weight percent ratio) of purified sodium montmorillonite and various additives serving as accessory mineral proxies

Influence of HEPES buffer on the local pH and formation of surface layer during in vitro degradation tests of magnesium in DMEM

Directory of Open Access Journals (Sweden)

S. Naddaf Dezfuli

2014-10-01

Full Text Available The human body is a buffered environment where pH is effectively maintained. HEPES is a biological buffer often used to mimic the buffering activity of the body in in vitro studies on the degradation behavior of magnesium. However, the influence of HEPES on the degradation behavior of magnesium in the DMEM pseudo-physiological solution has not yet been determined. The research aimed at elucidating the degradation mechanisms of magnesium in DMEM with and without HEPES. The morphologies and compositions of surface layers formed during in vitro degradation tests for 15–3600 s were characterized. The effect of HEPES on the electrochemical behavior and corrosion tendency was determined by performing electrochemical tests. HEPES indeed retained the local pH, leading to intense intergranular/interparticle corrosion of magnesium made from powder and an increased degradation rate. This was attributed to an interconnected network of cracks formed at the original powder particle boundaries and grain boundaries in the surface layer, which provided pathways for the corrosive medium to interact continuously with the internal surfaces and promoted further dissolution. Surface analysis revealed significantly reduced amounts of precipitated calcium phosphates due to the buffering activity of HEPES so that magnesium became less well protected in the buffered environment.

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces

Energy Technology Data Exchange (ETDEWEB)

Fu, Tsu-Yi, E-mail: phtifu@phy.ntnu.edu.tw; Wu, Jia-Yuan; Jhou, Ming-Kuan; Hsu, Hung-Chan [Department of Physics, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Rd, Taipei 116, Taiwan (China)

2015-05-07

Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2 × 8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(√3×√3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2 × 8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

Effect of an intermediate tungsten layer on thermal properties of TiC coatings ion plated onto molybdenum

International Nuclear Information System (INIS)

Fukutomi, M.; Fujitsuka, M.; Shikama, T.; Okada, M.

1985-01-01

Among the various low-Z coating-substrate systems proposed for fusion reactor first-wall applications, molybdenum coated with titanium carbide is considered very promising since it has a good capability of receiving heat from the plasma. The thermal stabilities of TiC layers ion plated onto the molybdenum substrate are discussed with particular reference to the interfacial reaction between the TiC coating and molybdenum. The deposition of an intermediate tungsten layer was found to be very effective in suppressing the formation of reaction layers, resulting in a marked improvement in thermal stabilities of TiC--Mo systems. Thermal shock test using a pulsed electron beam showed that the TiC coatings remained adherent to the molybdenum substrates during energy depositions high enough to melt the substrates within the area of beam deposition. The melt area of the TiC coatings apparently decreased when a tungsten intermediate layer was applied

Protocol Design and Performance Analysis of Multiuser Mixed RF and Hybrid FSO/RF Relaying With Buffers

KAUST Repository

Al-Eryani, Yasser F.

2018-03-07

In this paper, a multiuser mixed radio frequency (RF) and hybrid free-space optical (FSO)/RF system is considered, where multiple mobile users transmit their data to an intermediate decode-and-forward relay node through RF links using a virtual multiple-input multipleoutput (MIMO) system, and the relay node forwards the multiplexed data of all users through a FSO link that is supported by a RF MIMO backup system to the destination. The relay node is equipped with a buffer in the physical layer for temporal storage of the users\\' data until the best channel conditions at the relay-destination link aremet. For this communication setup, we first propose a transmission protocol that achieves a multiplexing gain through a virtual MIMO system. After that, we derive closed-form expressions for the end-to-end outage probability, asymptotic outage probability, average symbol error rate, and the ergodic capacity when considering the delay-tolerant (finite buffer size) scenario. The results show that buffering in the physical layer provides a significant enhancement to the system performance (outage, error rate, and ergodic capacity). It is also found that pointing error and severe weather turbulence conditions become more tolerable with the existence of the relay\\'s buffer and RF backup link (in the second hop). In addition, the proposed virtual MIMO scheme shows a significant performance enhancement at a high number of receiving antennas, which introduces potential lowcomplexity diversity gain-based massive MIMO schemes.

Protocol Design and Performance Analysis of Multiuser Mixed RF and Hybrid FSO/RF Relaying With Buffers

KAUST Repository

Al-Eryani, Yasser F.; Salhab, Anas; Zummo, Salam A.; Alouini, Mohamed-Slim

2018-01-01

In this paper, a multiuser mixed radio frequency (RF) and hybrid free-space optical (FSO)/RF system is considered, where multiple mobile users transmit their data to an intermediate decode-and-forward relay node through RF links using a virtual multiple-input multipleoutput (MIMO) system, and the relay node forwards the multiplexed data of all users through a FSO link that is supported by a RF MIMO backup system to the destination. The relay node is equipped with a buffer in the physical layer for temporal storage of the users' data until the best channel conditions at the relay-destination link aremet. For this communication setup, we first propose a transmission protocol that achieves a multiplexing gain through a virtual MIMO system. After that, we derive closed-form expressions for the end-to-end outage probability, asymptotic outage probability, average symbol error rate, and the ergodic capacity when considering the delay-tolerant (finite buffer size) scenario. The results show that buffering in the physical layer provides a significant enhancement to the system performance (outage, error rate, and ergodic capacity). It is also found that pointing error and severe weather turbulence conditions become more tolerable with the existence of the relay's buffer and RF backup link (in the second hop). In addition, the proposed virtual MIMO scheme shows a significant performance enhancement at a high number of receiving antennas, which introduces potential lowcomplexity diversity gain-based massive MIMO schemes.

Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile

International Nuclear Information System (INIS)

McMorrow, D.; Knudson, A.R.; Melinger, J.S.; Buchner, S.

1999-01-01

The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

Buffer-layer enhanced crystal growth of BaB6 (1 0 0) thin films on MgO (1 0 0) substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Kato, Yushi; Yamauchi, Ryosuke; Arai, Hideki; Tan, Geng; Tsuchimine, Nobuo; Kobayashi, Susumu; Saeki, Kazuhiko; Takezawa, Nobutaka; Mitsuhashi, Masahiko; Kaneko, Satoru; Yoshimoto, Mamoru

2012-01-01

Crystalline BaB 6 (1 0 0) thin films can be fabricated on MgO (1 0 0) substrates by inserting a 2-3 nm-thick epitaxial SrB 6 (1 0 0) buffer layer by pulsed laser deposition (PLD) in ultra-high vacuum (i.e., laser molecular beam epitaxy). Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of BaB 6 (1 0 0)/SrB 6 (1 0 0)/MgO (1 0 0) with the single domain of the epitaxial relationship. Conversely, BaB 6 thin films without the buffer layer were not epitaxial instead they developed as polycrystalline films with a random in-plane configuration and some impurity phases. As a result, the buffer layer is considered to greatly affect the initial growth of epitaxial BaB 6 thin films; therefore, in this study, buffering effects have been discussed. From the conventional four-probe measurement, it was observed that BaB 6 epitaxial thin films exhibit n-type semiconducting behavior with a resistivity of 2.90 × 10 -1 Ω cm at room temperature.

Effect of a thermally evaporated bis (2-methyl-8-quninolinato)-4-phenylphenolate cathode buffer layer on the performance of polymer photovoltaic cells

International Nuclear Information System (INIS)

Kim, Dal-Ho; Park, Jea-Gun

2012-01-01

We investigated the device characteristics of polymer photovoltaic (PV) cells based on a poly(3 hexylthiophene) (P3HT) and [6,6]-phenylC61 butyric acid methyl ester (PCBM) bulk heterojunction with a cathode buffer layer of thermally evaporated bis (2-methyl-8-quninolinato)-4-phenylphenolate (BAlq). A power conversion efficiency (PCE) of 2.46% was obtained with the insertion of a 4-nm-thick BAlq, which was ∼118% increase over that for the cell without a BAlq layer, under Air Mass 1.5 Global (AM 1.5 G) illumination, 100 mW/cm 2 . Moreover, we examined the charge carrier transport property, and found that the hole mobility of the cell was enhancement due to the insertion of a BAlq layer with a thickness of less than 4 nm, which accounted for the improved in the photocurrent and fill factor (FF) due to the better balance of charge carriers. Finally, the BAlq buffer layer was also demonstrated as an optical spacer that improved the optical absorption of the P3HT:PCBM layer, which accounted for the J sc enhancement of the device.

Preparation of SmBiO{sub 3} buffer layer on YSZ substrate by an improved chemical solution deposition route

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiaolei [Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), Superconductivity and New Energy R& D Center, Mail Stop 165#, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Pu, Minghua, E-mail: mhpu@home.swjtu.edu.cn [Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), Superconductivity and New Energy R& D Center, Mail Stop 165#, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Yong [Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), Superconductivity and New Energy R& D Center, Mail Stop 165#, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, NSW 2052 (Australia)

2016-12-15

Highlights: • The proper conditions for SBO growth are 794 °C for 60 min in flowing Ar gas, the temperature of epitaxial growth is relatively low. • The total time by SSD technique for organic solvent removing, salts decomposition and layer growth is not up to 2 h, which are much less than that needed for traditional CSD of over 10 h. • SBO layer on YSZ prepared by SSD technique are suitable for the growth of YBCO, The results may be the usable reference for continuous preparation of SBO buffer layer on IBAD-YSZ/Ni-based alloy tapes. - Abstract: A quick route for chemical solution deposition (CSD) has been developed to prepare SmBiO{sub 3} (SBO) layers on yttria stabilized zirconia (YSZ) substrates rapidly by using of solid state decomposition (SSD) technique. The proper conditions for volatilization of lactic acid, which as solvent in precursor coated layer, and SBO growth are 115°C for 30 min and 794°C for 60 min in flowing Ar gas. The coated layers are amorphous structure of mixture oxides and quasi-crystal structure of SBO before and after growth, respectively. The total time by this quick CSD route for organic solvent volatilization, salts decomposed and layer growth is not up to 2 h, which are much less than that needed for traditional CSD of over 10 h. SBO layer is directly epitaxial growth on YSZ substrate without any lattice rotation. SBO layer prepared by this quick route as well as that by traditional route are suitable for the growth of YBCO. The superconducting transition temperature and critical current density of the coated YBCO layer on SBO/YSZ obtained by this quick route are up to 90 K and 1.66 MA/cm{sup 2}. These results may be the usable reference for continuous preparation of SBO buffer layer on IBAD-YSZ/Ni-based alloy tapes.

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

Science.gov (United States)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

Interdiffusion studies on high-Tc superconducting YBa2Cu3O7-δ thin films on Si(111) with a NiSi2/ZrO2 buffer layer

DEFF Research Database (Denmark)

Aarnink, W.A.M.; Blank, D.H.A.; Adelerhof, D.J.

1991-01-01

Interdiffusion studies on high-T(c) superconducting YBa2Cu3O7-delta thin films with thickness in the range of 2000-3000 angstrom, on a Si(111) substrate with a buffer layer have been performed. The buffer layer consists of a 400 angstrom thick epitaxial NiSi2 layer covered with 1200 angstrom...... of polycrystalline ZrO2. YBa2Cu3O7-delta films were prepared using laser ablation. The YBa2Cu3O7-delta films on the Si/NiSi2/ZrO2 substrates are of good quality; their critical temperatures T(c,zero) and T(c,onset) have typical values of 85 and 89 K, respectively. The critical current density j(c) at 77 K equaled 4...... x 10(4) A/cm2. With X-ray analysis (XRD), only c-axis orientation has been observed. The interdiffusion studies, using Rutherford backscattering spectrometry (RBS) and scanning Auger microscopy (SAM) show that the ZrO2 buffer layer prevents severe Si diffusion to the YBa2Cu3O7-delta layer, the Si...

Optical characterization of In{sub 2}S{sub 3} solar cell buffer layers grown by chemical bath and physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Trigo, J.F.; Asenjo, B.; Herrero, J.; Gutierrez, M.T. [Department of Energy, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain)

2008-09-15

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In{sub 2}S{sub 3} buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In{sub 2}S{sub 3} thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell. (author)

Effects of V2O3 buffer layers on sputtered VO2 smart windows: Improved thermochromic properties, tunable width of hysteresis loops and enhanced durability

Science.gov (United States)

Long, Shiwei; Cao, Xun; Sun, Guangyao; Li, Ning; Chang, Tianci; Shao, Zewei; Jin, Ping

2018-05-01

Vanadium dioxide (VO2) is one of the most well-known thermochromic materials, which exhibits a notable optical change from transparent to reflecting in the infrared region upon a metal-insulator phase transition. For practical applications, VO2 thin films should be in high crystalline quality to obtain a strong solar modulation ability (ΔTsol). Meanwhile, narrow hysteresis loops and robust ambient durability are also indispensable for sensitivity and long-lived utilization, respectively. In this work, a series of high-quality V2O3/VO2 bilayer structures were grown on quartz glass substrates by reactive magnetron sputtering. Basically, the bottom V2O3 acts as the buffer layer to improve the crystallinity of the top VO2, while the VO2 serves as the thermochromic layer to guarantee the solar modulation ability for energy-saving. We observed an obvious increase in ΔTsol of 76% (from 7.5% to 13.2%) for VO2 films after introducing V2O3 buffer layers. Simultaneously, a remarkable reduction by 79% (from 21.9 °C to 4.7 °C) in width of hysteresis loop was obtained when embedding 60 nm V2O3 buffer for 60 nm VO2. In addition, VO2 with non-stoichiometry of V2O3±x buffer demonstrates a broadening hysteresis loops width, which is derived from the lattice distortion caused by lattice imperfection. Finally, durability of VO2 has been significantly improved due to positive effects of V2O3 buffer layer. Our results lead to a comprehensive enhancement in crystallinity of VO2 and shed new light on the promotion of thermochromic property by homologous oxides for VO2.

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Science.gov (United States)

Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

2014-12-01

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

The mechanism of the nano-CeO2 films deposition by electrochemistry method as coated conductor buffer layers

International Nuclear Information System (INIS)

Lu, Yuming; Cai, Shuang; Liang, Ying; Bai, Chuanyi; Liu, Zhiyong; Guo, Yanqun; Cai, Chuanbing

2015-01-01

Highlights: • Crack-free CeO 2 film thicker than 200 nm was prepared on NiW substrate by ED method. • Different electrochemical processes as hydroxide/metal mechanisms were identified. • The CeO 2 precursor films deposited by ED method were in nano-scales. - Abstract: Comparing with conventional physical vapor deposition methods, electrochemistry deposition technique shows a crack suppression effect by which the thickness of CeO 2 films on Ni–5 at.%W substrate can reach a high value up to 200 nm without any cracks, make it a potential single buffer layer for coated conductor. In the present work, the processes of CeO 2 film deposited by electrochemistry method are detailed investigated. A hydroxide reactive mechanism and an oxide reactive mechanism are distinguished for dimethyl sulfoxide and aqueous solution, respectively. Before heat treatment to achieve the required bi-axial texture performance of buffer layers, the precursor CeO 2 films are identified in nanometer scales. The crack suppression for electrochemistry deposited CeO 2 films is believed to be attributed to the nano-effects of the precursors

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Science.gov (United States)

Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

2018-06-08

Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

International Nuclear Information System (INIS)

Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

2007-01-01

Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

Environmental Modeling, The Buffer Priority layers for Nitrogen Removal identify priority forest/grass buffer sites by subwatershed. Land use, hydrology, soil, and landscape characteristics were analyzed to rank opportunities with high nitrogen removal potential., Published in 2014, Smaller than 1:100000 scale, Maryland Department of Natural Resources (DNR).

Data.gov (United States)

NSGIC Education | GIS Inventory — Environmental Modeling dataset current as of 2014. The Buffer Priority layers for Nitrogen Removal identify priority forest/grass buffer sites by subwatershed. Land...

Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness

Science.gov (United States)

Kajikawa, Y.; Nishigaichi, M.; Tenma, S.; Kato, K.; Katsube, S.

2018-04-01

InGaAs layers were grown by molecular-beam epitaxy on nominal and vicinal Ge(111) substrates with inserting GaSb buffer layers. High-resolution X-ray diffraction using symmetric 333 and asymmetric 224 reflections was employed to analyze the crystallographic properties of the grown layers. By using the two reflections, we determined the lattice constants (the unit cell length a and the angle α between axes) of the grown layers with taking into account the rhombohedral distortion of the lattices of the grown layers. This allowed us the independent determination of the strain components (perpendicular and parallel components to the substrate surface, ε⊥ and ε//) and the composition x of the InxGa1-xAs layers by assuming the distortion coefficient D, which is defined as the ratio of ε⊥ against ε//. Furthermore, the twin ratios were determined for the GaSb and the InGaAs layers by comparing asymmetric 224 reflections from the twin domain with that from the normal domain of the layers. As a result, it has been shown that the twin ratio in the InGaAs layer can be decreased to be less than 0.1% by the use of the vicinal substrate together with annealing the GaSb buffer layer during the growth interruption before the InGaAs overgrowth.

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

2014-01-01

High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

International Nuclear Information System (INIS)

Storm, D.F.; Katzer, D.S.; Binari, S.C.; Glaser, E.R.; Shanabrook, B.V.; Roussos, J.A.

2002-01-01

Beryllium doping of epitaxial GaN layers is used to reduce leakage currents through interfacial or buffer conducting layers grown by plasma-assisted molecular-beam epitaxy on SiC. Capacitance-voltage measurements of Schottky barrier test structures and dc pinch-off characteristics of unintentionally doped GaN high-electron-mobility transistors indicate that these leakage currents are localized near the GaN/AlN interface of our AlGaN/GaN/AlN device structures. Insertion of a 2000 Aa Be:GaN layer at the interface reduces these currents by three orders of magnitude

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

Energy Technology Data Exchange (ETDEWEB)

Qian, L., E-mail: qian_lei@126.com; Xu, Z.; Teng, F.; Duan, X.-X. [Beijing Jiaotong University, Institute of Optoelectronic Technology (China); Jin, Z.-S.; Du, Z.-L. [Henan University, Key Laboratory on special functional materials (China); Li, F.-S.; Zheng, M.-J. [State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Department of Physics (China); Wang, Y.-S. [Beijing Jiaotong University, Institute of Optoelectronic Technology (China)

2007-06-15

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)-p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

Science.gov (United States)

Qian, L.; Xu, Z.; Teng, F.; Duan, X.-X.; Jin, Z.-S.; Du, Z.-L.; Li, F.-S.; Zheng, M.-J.; Wang, Y.-S.

2007-06-01

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)- p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.

Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

Science.gov (United States)

Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

2014-12-05

Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

Science.gov (United States)

Hill, Heather M.; Rigosi, Albert F.; Chowdhury, Sugata; Yang, Yanfei; Nguyen, Nhan V.; Tavazza, Francesca; Elmquist, Randolph E.; Newell, David B.; Hight Walker, Angela R.

2017-11-01

Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer layer (IBL), whose properties include an electronic band gap. Although much research has been conducted to learn about the electrical properties of the IBL, not nearly as much work has been reported on the optical properties of the IBL. In this work, we combine measurements from Mueller matrix ellipsometry, differential reflectance contrast, atomic force microscopy, and Raman spectroscopy, as well as calculations from Kramers-Kronig analyses and density-functional theory, to determine the dielectric function of the IBL within the energy range of 1 eV to 8.5 eV.

Impact of annealing treatment before buffer layer deposition on Cu2ZnSn(S,Se)4 solar cells

International Nuclear Information System (INIS)

Hironiwa, Daisuke; Sakai, Noriyuki; Kato, Takuya; Sugimoto, Hiroki; Tang, Zeguo; Chantana, Jakapan; Minemoto, Takashi

2015-01-01

Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells were fabricated with an annealing treatment before the deposition of buffer layers to improve their photovoltaic performance. The CZTSSe absorbers were produced by sulfurization and selenization of metallic precursors. The efficiency of the solar cells increased from 5.5% without the annealing treatment to 8.8% with the annealing treatment at a temperature of 200 °C before buffer layer fabrication. Photoluminescence (PL) measurements revealed that the density of defects in the CZTSSe absorber that acted as non-radiative recombination centers decreased with the annealing treatment. The PL peak intensity exhibited a linear relationship with the open circuit voltage and the fill factor. In addition, the carrier density and hole mobility of the CZTSSe absorbers, which were respectively investigated by capacitance-voltage and Hall effect measurements, increased with the annealing treatment, thus improving cell performance. - Highlights: • Cu 2 ZnSn(S,Se) 4 is fabricated by sulfurization and selenization. • The annealing treatment can effectively improve the cell performance. • The defect acting as recombination is decreased by annealing treatment. • Carrier density and hole mobility is increased by annealing treatment

Effect of a SiO2 buffer layer on the characteristics of In2O3-ZnO-SnO2 films deposited on PET substrates

International Nuclear Information System (INIS)

Woo, B.-J.; Hong, J.-S.; Kim, S.-T.; Kim, H.-M.; Park, S.-H.; Kim, J.-J.; Ahn, J.-S.

2006-01-01

Transparent and conducting In 2 O 3 -ZnO-SnO 2 (IZTO) thin films were prepared on flexible PET substrates at room temperature by using an ion-gun-assisted sputtering technique. We mainly investigated the effect of a SiO 2 buffer layer, deposited in-between the film and the PET substrate, on the electrical stability of the film under various external stresses caused by moist-heat or violent temperature variations. The insertion of the SiO 2 layer improves structural, optical and electrical properties of the films: The IZTO/SiO 2 /PET film with a buffer shows a change (∼4 %) in the sheet resistance much smaller than that of the IZTO/PET film without a buffer (∼22 %), against a severe thermal stress of the repeated processes between quenching at -25 .deg. C and annealing at 100 .deg. C for 5 min at each process. Under a moist-heat stress at 90 % relative humidity at 80 .deg. C, the IZTO/SiO 2 /PET film responds with only a slight change (∼8.5 %) in the sheet resistance from 30.2 to 33.0 Ω/□ after being exposed for 240 h. The enhanced stability is understood to be the result of the buffer layers acting as a blocking barrier to water vapor or organic solvents diffusing from the PET substrate during deposition or annealing.

N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

International Nuclear Information System (INIS)

Tanida, Shinji; Noda, Kei; Kawabata, Hiroshi; Matsushige, Kazumi

2009-01-01

N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO 2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO 2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO 2 surface.

Improvement in the Lifetime of Planar Organic Photovoltaic Cells through the Introduction of MoO3 into Their Cathode Buffer Layers

Directory of Open Access Journals (Sweden)

Linda Cattin

2014-03-01

Full Text Available Recently, MoO3, which is typically used as an anode buffer layer in organic photovoltaic cells (OPVCs, has also been used as a cathode buffer layer (CBL. Here, we check its efficiency as a CBL using a planar heterojunction based on the CuPc/C60 couple. The CBL is a bi-layer tris-(8-hydroxyquinoline aluminum (Alq3/MoO3. We show that the OPVC with MoO3 in its CBL almost immediately exhibits lower efficiency than those using Alq3 alone. Nevertheless, the OPVCs increase their efficiency during the first five to six days of air exposure. We explain this evolution of the efficiency of the OPVCs over time through the variation in the MoO3 work function due to air contamination. By comparison to a classical OPVC using a CBL containing only Alq3, if it is found that the initial efficiency of the latter is higher, this result is no longer the same after one week of exposure to ambient air. Indeed, this result is due to the fact that the lifetime of the cells is significantly increased by the presence of MoO3 in the CBL.

Photonic intermediate layer for silicon tandem solar cells

Energy Technology Data Exchange (ETDEWEB)

Bielawny, Andreas; Miclea, Paul-Tiberiu; Wehrspohn, Ralf [Martin-Luther Universitaet Halle-Wittenberg (Germany). Inst. fuer Physik, Mikro-MD; Lee, Seuong-Mo; Knez, Mato [Max-Planck-Inst. fuer Mikrostrukturphysik, Halle (Germany); Carius, Reinhard [Forschungszentrum Juelich (DE). Inst. fuer Photovoltaik (IEF-5); Lisca, Marian; Rockstuhl, Carsten; Lederer, Falk [Universitaet Jena (Germany). Dept. Physik

2008-07-01

The concept of incorporation of a 3D photonic crystal as diffractive spectral filter within a-Si/mc-Si tandem solar cells has been investigated as a promising application. Our intermediate reflective filter enhances the pathway of spectrally selected light within an amorphous silicon top cell in its spectral region of low absorption. From our previous work, we expect a significant improvement of the tandem's efficiency of about 1.2%(absolute). This increases efficiency for a typical silicon tandem cell from 11.2% to 12.4%, as a result of the optical current-matching of the two junctions. Our wavelength-selective optical element is a 3D-structured optical thin-film - prepared by self-organized artificial opal templates and finalized with atomic layer deposition techniques. The resulting samples are highly periodical thin-film inverted opals made of zinc-oxide. We compare recent experimental data on the optical properties with our simulations and photonic bandstructure calculations.

Optimization by simulation of the nature of the buffer, the gap profile of the absorber and the thickness of the various layers in CZTSSe solar cells

Science.gov (United States)

Chadel, Meriem; Chadel, Asma; Moustafa Bouzaki, Mohammed; Aillerie, Michel; Benyoucef, Boumediene; Charles, Jean-Pierre

2017-11-01

Performances of ZnO/ZnS/CZTSSe polycrystalline thin film solar cells (Copper Zinc Tin Sulphur Selenium-solar cell) were simulated for different thicknesses of the absorber and ZnS buffer layers. Simulations were performed with SCAPS (Solar Cell Capacitance Simulator) software, starting with actual parameters available from industrial data for commercial cells processing. The influences of the thickness of the various layers in the structure of the solar cell and the gap profile of the CZTSSe absorber layer on the performance of the solar cell were studied in detail. Through considerations of recent works, we discuss possible routes to enhance the performance of CZTSSe solar cells towards a higher efficiency level. Thus, we found that for one specific thickness of the absorber layer, the efficiency of the CZTSSe solar cell can be increased when a ZnS layer replaces the usual CdS buffer layer. On the other hand, the efficiency of the solar cell can be also improved when the absorber layer presents a grad-gap. In this case, the maximum efficiency for the CZTSSe cell was found equal to 13.73%.

Brazilian low and intermediate level radioactive waste disposal and environmental conservation areas

International Nuclear Information System (INIS)

Uemura, George; Cuccia, Valeria

2013-01-01

Low and intermediate level radioactive waste should be disposed off in proper disposal facilities. These facilities must include unoccupied areas as protection barriers, also called buffer zone. Besides that, Brazilian environmental laws require that certain enterprises must preserve part of their area for environmental conservation. The future Brazilian low and intermediate level waste repository (RBMN) might be classified as such enterprise. This paper presents and discusses the main Brazilian legal framework concerning different types of conservation areas that are allowed and which of them could be applied to the buffer zones of RBMN. The possibility of creating a plant repository in the buffer zone is also discussed. (author)

Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer

Energy Technology Data Exchange (ETDEWEB)

Zheng Hong; Cheng Xiaoman; Tian Haijun [Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, Tianjin 300384 (China); Zhao Geng, E-mail: zheng_033@163.com [School of Science, Tianjin University of Technology, Tianjin 300384 (China)

2011-09-15

We have investigated the properties of C60-based organic field effect transistors (OFETs) with a tris(8-hydroxyquinoline) aluminum (Alq3) buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 film. The peak field effect mobility is increased to 1.28 x 10{sup -2} cm{sup 2}/(V{center_dot}s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm. The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films. (semiconductor devices)

Development of all chemical solution derived Ce0.9La0.1O2−y/Gd2Zr2O7 buffer layer stack for coated conductors: influence of the post-annealing process on surface crystallinity

International Nuclear Information System (INIS)

Zhao, Y; Li, X-F; He, D; Andersen, N H; Grivel, J-C; Khoryushin, A; Hansen, J B

2012-01-01

Preparation and characterization of a biaxially textured Gd 2 Zr 2 O 7 and Ce 0.9 La 0.1 O 2−y (CLO, cap)/Gd 2 Zr 2 O 7 (GZO, barrier) buffer layer stack by the metal–organic deposition route are reported. YBa 2 Cu 3 O 7−d (YBCO) superconductor films were deposited by the pulsed-laser deposition (PLD) technique to assess the efficiency of such a novel buffer layer stack. Biaxial texture quality and morphology of the buffer layers and the YBCO superconductor films were fully characterized. The surface crystallinity of the buffer layers is studied by the electron backscatter diffraction technique. It is revealed that post-annealing GZO films in 2% H 2 in Ar is an effective way to improve the surface crystallinity. As a result, a highly textured CLO film can grow directly on the GZO film at a lower crystallization temperature. The critical current density of a YBCO PLD film is higher than 1 MA cm −2 (77 K, in self-field), demonstrating that the novel CLO/GZO stack is very promising for further development of low cost buffer layer architectures for coated conductors.

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

International Nuclear Information System (INIS)

Fedorenko, Y. G.; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

2015-01-01

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

Energy Technology Data Exchange (ETDEWEB)

Fedorenko, Y. G., E-mail: y.fedorenko@liverpool.ac.uk; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K. [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF (United Kingdom)

2015-10-28

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

Science.gov (United States)

Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

2016-07-14

We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

Study on advanced Ce0.9La0.1O2/Gd2Zr2O7 buffer layers architecture towards all chemical solution processed coated conductors

DEFF Research Database (Denmark)

Yue, Zhao; Ma, L.; Wu, W.

2015-01-01

2Zr2O7 buffer layer stack and the 200 nm thick YBa2Cu3O7 (YBCO) superconducting layer were sequentially deposited on textured NiW substrates using metal-organic deposition routes. The surface texture of the Gd2Zr2O7 barrier layer deteriorates when the film thickness increases to 80 nm, although...

Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yan, T.; Lu, C.-Y.J.; Schuber, R.; Chang, L.; Schaadt, D.M.; Chou, M.M.C.; Ploog, K.H.; Chiang, C.-M.

2015-01-01

Highlights: • ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10 10 cm −2 ) as compared to those grown on LiAlO 2 substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission

Simulation for silicon-compatible InGaAs-based junctionless field-effect transistor using InP buffer layer

Science.gov (United States)

Seo, Jae Hwa; Cho, Seongjae; Kang, In Man

2013-10-01

In this paper, we present the optimized performances of indium gallium arsenide (InGaAs)-based compound junctionless field-effect transistors (JLFETs) using an indium phosphide (InP) buffer layer. The proposed InGaAs-InP material combination with little lattice mismatch provides a significant improvement in current drivability securing various potential applications. Device optimization is performed in terms of primary dc parameters and characterization is investigated by two-dimensional (2D) technology computer-aided design simulations. The optimization variables were the channel doping concentration (Nch), the buffer doping concentration (Nbf), and the channel thickness (Tch). For the optimally designed InGaAs JLFET, on-state current (Ion) of 325 µA µm-1, subthreshold swing (S) of 80 mV dec-1, and current ratio (Ion/Ioff) of 109 were obtained. In the end, the results are compared with the data of silicon (Si)-based JL MOSFETs to confirm the improvements.

A comparative study of the annealing behavior of Cu(In,Ga)(S,Se)2 based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

International Nuclear Information System (INIS)

Hönes, C.; Hackenberg, J.; Zweigart, S.; Wachau, A.; Hergert, F.; Siebentritt, S.

2015-01-01

Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se 2 based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se) 2 based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energy for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects

Spin-Assisted Layer-by-Layer Assembly: Variation of Stratification as Studied with Neutron Reflectivity

International Nuclear Information System (INIS)

Kharlampieva, Eugenia; Kozlovskaya, Veronika; Chan, Jennifer; Ankner, John Francis; Tsukruk, Vladimir V.

2009-01-01

We apply neutron reflectivity to probe the internal structure of spin-assisted layer-by-layer (LbL) films composed of electrostatically assembled polyelectrolytes. We find that the level of stratification and the degree of layer intermixing can be controlled by varying the type and concentration of salt during LbL assembly. We observe well-defined layer structure in spin-assisted LbL films when deposited from salt-free solutions. These films feature 2-nm-thick bilayers, which are ∼3-fold thicker than those in dipped LbL films assembled under similar conditions. Addition of a 10mM phosphate buffer promotes progressive layer inter-diffusion with increasing distance from the substrate. However, adding 0.1M NaCl to the phosphate buffer solution restores the layer stratification. We also find that spin-assisted LbL films obtained from buffer solutions are more highly stratified as compared to the highly intermixed layers seen in dipped LbL films assembled from buffer. Our results yield new insight into the mechanism of spin-assisted LbL assembly that should prove useful for biotechnological applications.

Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures

Institute of Scientific and Technical Information of China (English)

LI Ling; WANG Chuanbin; WANG Fang; SHEN Qiang; ZHANG Lianmeng

2011-01-01

MgO thin films were deposited on Si(100) substrates by laser ablation under various substrate temperatures (Tsub),expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from (200) to (111).The crystallinity and surface morphology was different too,depending on Tsub·At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.

Study on CexLa1-xO2 Buffer Layer used in Coated Conductors by Chemical Solution Method

DEFF Research Database (Denmark)

Zhao, Yue; Suo, Hongli; Grivel, Jean-Claude

2009-01-01

Developing multi-functional single buffer layer is one of the most important challenges for simplification of coated conductors configuration. Ladoped CeO2 films were prepared by chemical solution method. And surface morphology and texture quality of the La-doped CeO2 films were investigated...... method. It suggects that Ce0.9La0.1O2 film prepared by chemical solution route have a promising prospect for the simplification of coated conductors configuration....

Propagation of misfit dislocations from buffer/Si interface into Si

Science.gov (United States)

Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

2011-08-30

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

LaNiO{sub 3} buffer layers for high critical current density YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8{minus}{delta}} films

Energy Technology Data Exchange (ETDEWEB)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-10-01

We demonstrate high critical current density superconducting films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8{minus}{delta}} (Tl-2212) using LaNiO{sub 3} (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J{sub c} (5 K, H=0) than films grown directly on a bare LaAlO{sub 3} substrate. YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J{sub c} at all temperatures and fields compared to those grown on bare LaAlO{sub 3}, correlating to both {ital a}-axis grain and nonsuperconducting phase formation. LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films in coated conductor applications. {copyright} {ital 1999 American Institute of Physics.}

Cube Texture Formation of Cu-33at.%Ni Alloy Substrates and CeO₂ Buffer Layer for YBCO Coated Conductors

DEFF Research Database (Denmark)

Tian, Hui; Li, Suo Hong; Ru, Liang Ya

2014-01-01

Cube texture formation of Cu-33 at.%Ni alloy substartes and CeO2 buffer layer prepared by chemical solution deposition on the textured substrate were investigated by electron back scattered diffraction (EBSD) and XRD technics systematically. The results shown that a strong cube textured Cu-33at...

OPTIMISATION OF BUFFER SIZE FOR ENHANCING QOS OF VIDEO TRAFFIC USING CROSS LAYERED HYBRID TRANSPORT LAYER PROTOCOL APPROACH

OpenAIRE

S. Matilda; B. Palaniappan

2011-01-01

Video streaming is gaining importance, with the wide popularity of multimedia rich applications in the Internet. Video streams are delay sensitive and require seamless flow for continuous visualization. Properly designed buffers offer a solution to queuing delay. The diagonally opposite QoS metrics associated with video traffic poses an optimization problem, in the design of buffers. This paper is a continuation of our previous work [1] and deals with the design of buffers. It aims at finding...

Bank regulatory Capital Buffer and Liquidity: Evidence from US and European Publicly Traded Banks

OpenAIRE

Distinguin , Isabelle; Roulet , Caroline; Tarazi , Amine

2012-01-01

The theory of financial intermediation highlights various channels through which capital and liquidity are interrelated. Using a simultaneous equations framework, we investigate the relationship between bank regulatory capital buffer and liquidity for European and U.S. publicly traded commercial banks. Previous research studying the determinants of bank capital buffer has neglected the role of liquidity. On the whole, we find that banks do not strengthen their regulatory capital buffer when t...

Effect of TiON–MgO intermediate layer on microstructure and magnetic properties of L1{sub 0} FePt–C–SiO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Deng, J.Y. [Department of Materials Science and Engineering, National University of Singapore, Singapore 117576 (Singapore); Dong, K.F. [School of Automation, China University of Geosciences, Wuhan 430074 (China); Peng, Y.G.; Ju, G.P. [Seagate Technology, Fremont, CA 94538 (United States); Hu, J.F. [Data Storage Institute (DSI), Singapore 117608 (Singapore); Chow, G.M.; Chen, J.S. [Department of Materials Science and Engineering, National University of Singapore, Singapore 117576 (Singapore)

2016-11-01

The microstructure and magnetic properties of L1{sub 0} FePt–C–SiO{sub 2} films grown on TiON–MgO intermediate layer were studied. TiON–MgO layer was deposited by co-sputtering TiN and MgO–TiO{sub 2} targets at 380 °C. With increasing MgO–TiO{sub 2} doping concentration, the contact angle between FePt grains with intermediate layer gradually increased, and it was close to 90° when the volume percentage of MgO–TiO{sub 2} reached 30%. At this condition, a high out-of-plane coercivity of 19.1 kOe was obtained, while the opening-up of in-plane M-H loop was very narrow. Moreover, it was found that the out-of-plane coercivity can be further improved to 21.6 kOe, by slightly increasing the percentage of MgO–TiO{sub 2} to 35 vol%. - Highlights: • The effect of TiON–MgO intermediate layer was studied. • With increasing the MgO composition, the surface energy of intermediate layer increased, and the FePt/TiON–MgO interfacial energy decreased. The contact angle of FePt grains with intermediate layer increased with the MgO composition, and 90° contact angle could be achieved by optimizing the MgO composition. • Good perpendicular magnetic anisotropy was retained with large out-of-plane coercivity and narrow in-plane opening-up.

Buffer Film Assisted Growth of Dense MWCNTs on Copper Foils for Flexible Electrochemical Applications

Directory of Open Access Journals (Sweden)

Udomdej Pakdee

2017-01-01

Full Text Available The novel Inconel buffer films were prepared on copper foils using unbalance direct current (DC magnetron sputtering. These films were employed as buffer layers for supporting the dense growth of multiwalled carbon nanotubes (MWCNTs. Thermal chemical vapor deposition (CVD with metal alloys such as stainless steel (SS type 304 films was considered to synthesize MWCNTs. To understand the effectiveness of these buffer films, the MWCNTs grown on buffer-free layer were carried out as a comparison. The main problem such as the diffusion of catalysts into the oxide layer of metal substrate during the CVD process was solved together with a creation of good electrical contact between substrate and nanotubes. The morphologies, crystallinities, and electrochemical behaviors of MWCNTs grown on Inconel buffer films with 304 SS catalysts revealed the better results for applying in flexible electrochemical applications.

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

KAUST Repository

Mumthaz Muhammed, Mufasila

2016-07-14

We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

KAUST Repository

Mumthaz Muhammed, Mufasila; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, Idris A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, Iman S.

2016-01-01

We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

Texture-enhanced Al-Cu electrodes on ultrathin Ti buffer layers for high-power durable 2.6 GHz SAW filters

Science.gov (United States)

Fu, Sulei; Wang, Weibiao; Xiao, Li; Lu, Zengtian; Li, Qi; Song, Cheng; Zeng, Fei; Pan, Feng

2018-04-01

Achieving high resistance to acoustomigration and electromigration in the electrodes used in high-power and high-frequency surface acoustic wave (SAW) filters is important to mobile communications development. In this study, the effects of the Ti buffer layers on the textures and acoustomigration and electromigration resistances of the Al-Cu electrodes were studied comprehensively. The results demonstrate that both power durability and electromigration lifetime are positively correlated with the Al-Cu electrode texture quality. Ultrathin (˜2 nm) Ti can lead to the strongest Al-Cu (111) textured electrodes, with a full width at half maximum of the rocking curve of 2.09°. This represents a remarkable enhancement of the power durability of high-frequency 2.6 GHz SAW filters from 29 dBm to 35 dBm. It also produces lifetime almost 7 times longer than those of electrodes without Ti buffer layers in electromigration tests. X-ray diffraction and transmission electron microscopy analyses revealed that these improved acoustomigration and electromigration resistances can be attributed primarily to the reductions in overall and large-angle grain boundaries in the highly Al-Cu (111) textured electrodes. Furthermore, the growth mechanism of highly Al-Cu texture films is discussed in terms of surface-interface energy balance.

Using Computer Simulation Method to Improve Throughput of Production Systems by Buffers and Workers Allocation

Directory of Open Access Journals (Sweden)

Kłos Sławomir

2015-12-01

Full Text Available This paper proposes the application of computer simulation methods to support decision making regarding intermediate buffer allocations in a series-parallel production line. The simulation model of the production system is based on a real example of a manufacturing company working in the automotive industry. Simulation experiments were conducted for different allocations of buffer capacities and different numbers of employees. The production system consists of three technological operations with intermediate buffers between each operation. The technological operations are carried out using machines and every machine can be operated by one worker. Multi-work in the production system is available (one operator operates several machines. On the basis of the simulation experiments, the relationship between system throughput, buffer allocation and the number of employees is analyzed. Increasing the buffer capacity results in an increase in the average product lifespan. Therefore, in the article a new index is proposed that includes the throughput of the manufacturing system and product life span. Simulation experiments were performed for different configurations of technological operations.

Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

KAUST Repository

Jagadamma, Lethy Krishnan; Abdelsamie, Maged; El Labban, Abdulrahman; Aresu, Emanuele; Ngongang Ndjawa, Guy Olivier; Anjum, Dalaver H.; Cha, Dong Kyu; Beaujuge, Pierre; Amassian, Aram

2014-01-01

In this report, we demonstrate that solution-processed amorphous zinc oxide (a-ZnO) interlayers prepared at low temperatures (∼100 °C) can yield inverted bulk-heterojunction (BHJ) solar cells that are as efficient as nanoparticle-based ZnO requiring comparably more complex synthesis or polycrystalline ZnO films prepared at substantially higher temperatures (150-400 °C). Low-temperature, facile solution-processing approaches are required in the fabrication of BHJ solar cells on flexible plastic substrates, such as PET. Here, we achieve efficient inverted solar cells with a-ZnO buffer layers by carefully examining the correlations between the thin film morphology and the figures of merit of optimized BHJ devices with various polymer donors and PCBM as the fullerene acceptor. We find that the most effective a-ZnO morphology consists of a compact, thin layer with continuous substrate coverage. In parallel, we emphasize the detrimental effect of forming rippled surface morphologies of a-ZnO, an observation which contrasts with results obtained in polycrystalline ZnO thin films, where rippled morphologies have been reported to improve efficiency. After optimizing the a-ZnO morphology at low processing temperature for inverted P3HT:PCBM devices, achieving a power conversion efficiency (PCE) of ca. 4.1%, we demonstrate inverted solar cells with low bandgap polymer donors on glass/flexible PET substrates: PTB7:PC71BM (PCE: 6.5% (glass)/5.6% (PET)) and PBDTTPD:PC71BM (PCE: 6.7% (glass)/5.9% (PET)). Finally, we show that a-ZnO based inverted P3HT:PCBM BHJ solar cells maintain ca. 90-95% of their initial PCE even after a full year without encapsulation in a nitrogen dry box, thus demonstrating excellent shelf stability. The insight we have gained into the importance of surface morphology in amorphous zinc oxide buffer layers should help in the development of other low-temperature solution-processed metal oxide interlayers for efficient flexible solar cells. This journal is

A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

Science.gov (United States)

Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

2018-01-01

ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

Integration of epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO{sub 2} buffer layers

Energy Technology Data Exchange (ETDEWEB)

Elibol, K. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Nguyen, M.D. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); SolMateS B.V., Drienerlolaan 5, Building 6, 7522NB Enschede (Netherlands); International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1 Dai Co Viet road, Hanoi 10000 (Viet Nam); Hueting, R.J.E. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Gravesteijn, D.J. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); NXP Semiconductors Research, High Tech Campus 46, 5656AE Eindhoven (Netherlands); Koster, G., E-mail: g.koster@utwente.nl [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Rijnders, G. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands)

2015-09-30

The integration of ferroelectric layers on gallium nitride (GaN) offers a great potential for various applications. Lead zirconate titanate (PZT), in particular Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}, is an interesting candidate. For that a suitable buffer layer should be grown on GaN in order to prevent the reaction between PZT and GaN, and to obtain PZT with a preferred orientation and phase. Here, we study pulsed laser deposited (100) rutile titanium oxide (R-TiO{sub 2}) as a potential buffer layer candidate for ferroelectric PZT. For this purpose, the growth, morphology and the surface chemical composition of R-TiO{sub 2} films were analyzed by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. We find optimally (100) oriented R-TiO{sub 2} growth on GaN (0002) using a 675 °C growth temperature and 2 Pa O{sub 2} deposition pressure as process conditions. More importantly, the R-TiO{sub 2} buffer layer grown on GaN/Si substrates prevents the unwanted formation of the PZT pyrochlore phase. Finally, the remnant polarization and coercive voltage of the PZT film on TiO{sub 2}/GaN/Si with an interdigitated-electrode structure were found to be 25.6 μC/cm{sup 2} and 8.1 V, respectively. - Highlights: • Epitaxial rutile TiO{sub 2} films were grown on GaN layer buffered Si substrate using pulsed laser deposition. • The rutile-TiO{sub 2} layer suppresses the formation of the pyrochlore phase in the epitaxial PZT film grown on GaN/Si. • An epitaxial PZT film on GaN/Si substrate with rutile TiO{sub 2} buffer layer exhibits good ferroelectric properties.

In-plane aligned YBCO tape on textured YSZ buffer layer deposited on stainless steel substrate by laser ablation only with O+ ion beam assistance

International Nuclear Information System (INIS)

Huang Xintang; Huazhong Normal Univ., Wuhan, HB; Wang Youqing; Wang Qiuliang; Chen Qingming

1999-01-01

In this paper we have prepared YSZ buffer layers on stainless steel substrates by laser ablation only with O + ion beam assistance and YBCO films on YSZ/steel consequently. The relevant parameters of YSZ and YBCO film deposition are indicated. (orig.)

Functional solid additive modified PEDOT:PSS as an anode buffer layer for enhanced photovoltaic performance and stability in polymer solar cells

Science.gov (United States)

Xu, Binrui; Gopalan, Sai-Anand; Gopalan, Anantha-Iyengar; Muthuchamy, Nallal; Lee, Kwang-Pill; Lee, Jae-Sung; Jiang, Yu; Lee, Sang-Won; Kim, Sae-Wan; Kim, Ju-Seong; Jeong, Hyun-Min; Kwon, Jin-Beon; Bae, Jin-Hyuk; Kang, Shin-Won

2017-01-01

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is most commonly used as an anode buffer layer in bulk-heterojunction (BHJ) polymer solar cells (PSCs). However, its hygroscopic and acidic nature contributes to the insufficient electrical conductivity, air stability and restricted photovoltaic (PV) performance for the fabricated PSCs. In this study, a new multifunctional additive, 2,3-dihydroxypyridine (DOH), has been used in the PEDOT: PSS buffer layer to obtain modified properties for PEDOT: PSS@DOH and achieve high PV performances. The electrical conductivity of PEDOT:PSS@DOH films was markedly improved compared with that of PEDOT:PSS. The PEDOT:PSS@DOH film exhibited excellent optical characteristics, appropriate work function alignment, and good surface properties in BHJ-PSCs. When a poly(3-hexylthiohpene):[6,6]-phenyl C61-butyric acid methyl ester blend system was applied as the photoactive layer, the power conversion efficiency of the resulting PSCs with PEDOT:PSS@DOH(1.0%) reached 3.49%, outperforming pristine PEDOT:PSS, exhibiting a power conversion enhancement of 20%. The device fabricated using PEDOT:PSS@DOH (1.0 wt%) also exhibited improved thermal and air stability. Our results also confirm that DOH, a basic pyridine derivative, facilitates adequate hydrogen bonding interactions with the sulfonic acid groups of PSS, induces the conformational transformation of PEDOT chains and contributes to the phase separation between PEDOT and PSS chains. PMID:28338088

Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer

DEFF Research Database (Denmark)

Sahoo, Hitesh Kumar; Ottaviano, Luisa; Zheng, Yi

2018-01-01

Integration of heterogeneous materials is crucial for many nanophotonic devices. The integration is often achieved by bonding using polymer adhesives or metals. A much better and cleaner option is direct wafer bonding, but the high annealing temperatures required make it a much less attractive...... atomic layer deposited Al2O3 an excellent choice for the intermediate layer. The authors have optimized the bonding process to achieve a high interface energy of 1.7 J/m2 for a low temperature annealing of 300 °C. The authors also demonstrate wafer bonding of InP to SiO2 on Si and GaAs to sapphire using...

Preparation of a Novel Ce0.9La0.1O2/Gd2Zr2O7 Buffer Layer Stack on NiW Alloy Substrates by the MOD Route

DEFF Research Database (Denmark)

Yue, Zhao; Grivel, Jean-Claude; Abrahamsen, Asger Bech

2011-01-01

An optimized buffer layer architecture prepared by a metal organic deposition method on biaxially textured metallic substrate is proposed and developed successfully. The major achievement of this work is to choose a ${\\rm Ce}_{0.9}{\\rm La}_{0.1}{\\rm O}_{2}$ layer as cap layer that possesses an ex...

Buffer lining manufacturing method for radioactive waste container

International Nuclear Information System (INIS)

Kawakami, Susumu; Sugino, Hiroyuki

1998-01-01

A recessed portion is formed on an upper surface of a filler layer made of a buffer powder filled into a container main body, the upper portion of the vessel main body is closed by a shrinkable liquid tight film. It is placed in a pressurizing container and pressed to mold a buffer lining base material integrated with the vessel main body. A flat upper surface and a containing space are formed by shaving to form a buffer lining. A disposing vessel containing radioactive wastes is inserted into the containing space, and the containing space is closed by a buffer block. The upper surface is sealed by a lid. With such a constitution, since a buffer lining integrated with the vessel main body can be formed easily inside the vessel main body, the disposing vessel can be contained in the containing vessel in a state surrounded by the buffer easily and stably without laying or piling over a large quantity of buffer blocks. (T.M.)

Off-wall boundary conditions for turbulent flows obtained from buffer-layer minimal flow units

Science.gov (United States)

Garcia-Mayoral, Ricardo; Pierce, Brian; Wallace, James

2012-11-01

There is strong evidence that the transport processes in the buffer region of wall-bounded turbulence are common across various flow configurations, even in the embryonic turbulence in transition (Park et al., Phys. Fl. 24). We use this premise to develop off-wall boundary conditions for turbulent simulations. Boundary conditions are constructed from DNS databases using periodic minimal flow units and reduced order modeling. The DNS data was taken from a channel at Reτ = 400 and a zero-pressure gradient transitional boundary layer (Sayadi et al., submitted to J . FluidMech .) . Both types of boundary conditions were first tested on a DNS of the core of the channel flow with the aim of extending their application to LES and to spatially evolving flows. 2012 CTR Summer Program.

Zinc Sulfide Buffer Layer for CIGS Solar Cells Prepared by Chemical Bath Deposition

Directory of Open Access Journals (Sweden)

Rui-Wei You

2016-11-01

Full Text Available In this study, ZnS thin films were successfully synthesized by chemical bath deposition (CBD with starting materials of NH2-NH2, SC(NH22, and ZnSO4‧7H2O. ZnS thin films were deposited with different time on glass substrates by CBD at 80oC and pH=9. Based on X-ray diffraction (XRD patterns, it is found that the ZnS thin films exhibit cubic polycrystalline phase. It was found that the optimum deposition time is 90 min for preparing ZnS thin film that is suitable as buffer layer for CuIn1-xGaxSe2 solar cells. The thin film deposited for 90 min has high transmittance up to 80% in the spectra range from 350 nm to 800 nm, and the optical band gap is about 3.59 eV.

Effect of TiN-ZrO{sub 2} intermediate layer on the microstructure and magnetic properties of FePt and FePt-SiO{sub 2}-C thin films

Energy Technology Data Exchange (ETDEWEB)

Dong, K.F., E-mail: dongkf1981@163.com; Mo, W.Q.; Jin, F.; Song, J.L.

2017-06-15

Highlights: • The TiN-ZrO{sub 2} consisted of solid solution of Ti(Zr)ON segregated by amorphous ZrO{sub 2}. • With doping ZrO{sub 2} into TiN layer, grain size of FePt films significantly decreased. • By introducing TiN-ZrO{sub 2}/TiN combined layer, the magnetic properties were improved. - Abstract: The microstructures and magnetic properties of FePt based thin films grown on TiN-ZrO{sub 2} and TiN-ZrO{sub 2}/TiN intermediate layers were systematically investigated. The TiN-ZrO{sub 2} intermediate layer was granular consisting of grains of solid solution of Ti(Zr)ON segregated by amorphous ZrO{sub 2}. It was found with doping ZrO{sub 2} into TiN intermediate layer, grain size of FePt-SiO{sub 2}-C films significantly decreased. Simultaneously, the isolation was obviously improved and grain size distribution became more uniform. However, the magnetic properties of the FePt-SiO{sub 2}-C films grown on TiN-ZrO{sub 2} intermediate layers were slowly deteriorated, which was due to the disturbance of the epitaxial growth of FePt by amorphous ZrO{sub 2} in TiN-ZrO{sub 2} intermediate layer. In order to improve the TiN-ZrO{sub 2} (0 0 2) texture and the crystallinity of TiN-ZrO{sub 2}, TiN-ZrO{sub 2}/TiN combined intermediate layer was introduced. And the magnetic properties were improved, simultaneously, achieving the benefit of grain size reduction. For the FePt 4 nm-SiO{sub 2} 40 vol%-C 20 vol% film grown on TiN/TiN-ZrO{sub 2} 30 vol% combined intermediate layer, well isolated FePt (0 0 1) granular films with coercivity higher than 17.6 kOe and an average size as small as 6.5 nm were achieved.

Fabrication of Ni-5 at. %W Long Tapes with CeO₂ Buffer Layer by Reel-to-Reel Method

DEFF Research Database (Denmark)

Ma, Lin; Tian, Hui; Yue, Zhao

2015-01-01

A 10-m-long homemade textured Ni-5at.%W (Ni5W) long tape with a CeO2 buffer layer has been prepared successfully by means of rolling-assisted biaxially textured substrate (RABiTS) route followed by a chemical solution deposition method in a reel-to-reel manner. Globally, the Ni5W substrate and CeO2...

Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

Energy Technology Data Exchange (ETDEWEB)

Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); Niermann, T.; Lehmann, M. [Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany); Thapa, S. B.; Haeberlen, M.; Storck, P. [SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); BTU Cottbus, Konrad-Zuse-Str. 1, 03046 Cottbus (Germany)

2015-11-16

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

Surface Analysis of Railway Buffers Heads Covered with Bronze Using Laser Cladding

Directory of Open Access Journals (Sweden)

Sitarz M.

2017-06-01

Full Text Available Railway buffers during the operation are staying in almost permanent contact with each other, creating friction node in the point of contact of two railway buffer heads. In consequence of overcoming track curves, turnouts and unevenness of track, the railway buffer heads moves relative to each other causing friction, which results in its wear. When the wear is excessive, it might be a reason to withdrawn vehicle from service, it causes flattening of buffer head, and in consequence its abnormal cooperation. To avoid this phenomenon the buffer heads should be covered with graphitized grease, but this method has many disadvantages. Accordingly, it was found that it would be beneficial to cover the buffer head with bronze using laser cladding. In this article the metallographic and mechanical analysis of the newly created top layer of railway buffer head are presented. In article the results from tribological tests conducted on Amsler test bench are also presented. Based on test results described in article concluded that the layer of bronze coat on working surface of railway buffer head can be beneficial from operational point of view.

GaInAs Junction FET with InP buffer layer prepared by selective ion implantation of Be and rapid thermal annealing

International Nuclear Information System (INIS)

Selders, J.; Wachs, H.J.; Jurgensen, H.

1986-01-01

GaInAs JFETs were fabricated on VPE-grown GaInAs layers. The pn junctions have been realised with Be ion implantation and rapid thermal annealing. The devices show a high transconductance of 130 mS/mm and an electron saturation velocity of 1.8 x 10 7 cm/s. Channel mobilities measured at the complete device are as high as 6800 cm 2 /Vs. These excellent device properties are due to the use of an undoped InP buffer layer which avoids the diffusion of Fe from the substrate into the active layer. The data were supported by S-parameter measurements which gave a frequency limit of 20 GHz for gate dimensions of 1.6 by 200 μm 2 . (author)

Buffer layers for growth of the YBa sub 2 Cu sub 3 O sub 7 sub - sub x films on silicon

CERN Document Server

Razumov, S V

2001-01-01

The results of the studies on the structural characteristics of the SrTiO sub 3 , NdGaO sub 3 and CeO sub 2 buffer layers, obtained through the ion-plasma spraying on the silicon substrates, are presented. It is shown that the phase composition and internal stresses in the films are strongly dependent on the deposition temperature. The technological conditions of growth of primarily oriented SrTiO sub 3 , NdGaO sub 3 and CeO sub 2 films are dortmund. The structural quality of the obtained buffer films is sufficient for further growth of the YBa sub 2 Cu sub 3 O sub 7 sub - sub x high-quality films on the silicon substrates

The effect of Cu-rich sub-layer on the increased corrosion resistance of Cu-xZn alloys in chloride containing borate buffer

International Nuclear Information System (INIS)

Milosev, Ingrid; Mikic, Tadeja Kosec; Gaberscek, Miran

2006-01-01

The electrochemical behaviour of Cu-xZn alloys, as well as their constituent metals, in a borate buffer containing chloride ions in the molar range from 0.01 to 1 M are studied. Characteristics of these materials under anodic polarization are compared and the composition and morphology of the corrosion products formed in the course of polarization experiment are analysed by SEM and EDS. X-ray photoelectron spectroscopy and electrochemical impedance measurements are used for characterization of the surface layers formed on Cu, Zn and Cu-40Zn alloy during 2-h immersion at E oc in a borate buffer containing two different concentrations of chloride ions. New aspects of the behaviour of brass under E oc condition are revealed. The improved corrosion resistance of brass in chloride media, if compared to zinc metal, is attributed to a Cu-rich layer formed by the selective dissolution of zinc. Based on the results, a structural model describing the improved corrosion resistance of Cu-40Zn alloy with respect to Zn metal is proposed

A comparative study of the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

Energy Technology Data Exchange (ETDEWEB)

Hönes, C., E-mail: christian.hoenes@de.bosch.com [Corporate Research and Advance Engineering, Robert Bosch GmbH, Robert-Bosch-Straße 2, D-71701 Schwieberdingen (Germany); Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux (Luxembourg); Hackenberg, J. [Corporate Research and Advance Engineering, Robert Bosch GmbH, Robert-Bosch-Straße 2, D-71701 Schwieberdingen (Germany); Zweigart, S. [Corporate Research and Advance Engineering, Robert Bosch GmbH, Postfach 10 60 50, D-70049 Stuttgart (Germany); Wachau, A.; Hergert, F. [Bosch Solar CISTech GmbH, D-14772 Brandenburg (Germany); Siebentritt, S., E-mail: susanne.siebentritt@uni.lu [Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux (Luxembourg)

2015-03-07

Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se{sub 2} based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energy for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects.

Characterization of a strongly textured non-ferromagnetic Cu-33 at%Ni substrate coated with a CeO₂ buffer layer

DEFF Research Database (Denmark)

Tian, Hui; Suo, H.L.; Yue, Zhao

2013-01-01

the fraction of the cube {001}〈100〉 texture is 99.8% and the fraction of boundary misorientations with angles greater than 10 is only 5%. The material is shown to be non-ferromagnetic at typical operating temperatures for coated conductors. Furthermore, it is shown that a CeO2 buffer layer can be successfully...

MOD approach for the growth of epitaxial CeO2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors

International Nuclear Information System (INIS)

Bhuiyan, M S; Paranthaman, M; Sathyamurthy, S; Aytug, T; Kang, S; Lee, D F; Goyal, A; Payzant, E A; Salama, K

2003-01-01

We have grown epitaxial CeO 2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors using a newly developed metal organic decomposition (MOD) approach. Precursor solution of 0.25 M concentration was spin coated on short samples of Ni-3 at%W (Ni-W) substrates and heat-treated at 1100 C in a gas mixture of Ar-4%H 2 for 15 min. Detailed x-ray studies indicate that CeO 2 films have good out-of-plane and in-plane textures with full-width-half-maximum values of 5.8 deg. and 7.5 deg., respectively. High temperature in situ XRD studies show that the nucleation of CeO 2 films starts at 600 C and the growth completes within 5 min when heated at 1100 C. SEM and AFM investigations of CeO 2 films reveal a fairly dense microstructure without cracks and porosity. Highly textured YSZ barrier layers and CeO 2 cap layers were deposited on MOD CeO 2 -buffered Ni-W substrates using rf-magnetron sputtering. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A critical current, J c , of about 1.5 MA cm -2 at 77 K and self-field was obtained on YBCO (PLD)/CeO 2 (sputtered)/YSZ (sputtered)/CeO 2 (spin-coated)/Ni-W

Investigation of fundamental physical properties of CdSiP{sub 2} and its application in solar cell devices by using (ZnX; X = Se, Te) buffer layers

Energy Technology Data Exchange (ETDEWEB)

Verma, A.S., E-mail: ajay_phy@rediffmail.com [Department of Physics, Banasthali Vidyapith, Rajasthan 304022 (India); Gautam, Ruchita; Singh, Pravesh [Department of Physics, Banasthali Vidyapith, Rajasthan 304022 (India); Department of Electronics and Communication, Krishna Institute of Engineering and Technology, Ghaziabad, Uttar Pradesh 201206 (India); Sharma, Sheetal [Department of Physics, Swami Premanand Mahavidyalaya, Mukerian, Punjab 144211 (India); Kumari, Sarita [Department of Physics, University of Rajasthan, Jaipur 302004 (India)

2016-03-15

Graphical abstract: - Highlights: • FP-LAPW method has been used to compute the solid state properties of CdSiP{sub 2}. • Electronic and optical properties reported by WIEN2K with recently developed mBJ potential. • The elastic and thermal properties were evaluated by first principles calculations. • Hardness was calculated for the first time at different temperature and pressure. • Solar cell devices with ZnSe/ZnTe buffer layers by simulated work. - Abstract: The first principles calculations were performed by the linearized augmented plane wave (LAPW) method as implemented in the WIEN2K code within the density functional theory to obtain the structural, electronic and optical properties of CdSiP{sub 2} in the body centered tetragonal (BCT) phase. The six elastic constants (C{sub 11}, C{sub 12}, C{sub 13}, C{sub 33}, C{sub 44} and C{sub 66}) and mechanical parameters were presented and compared with the available experimental data. The thermodynamic calculations within the quasi-harmonic approximation is used to give an accurate description of the pressure-temperature dependence of the thermal-expansion coefficient, bulk modulus, specific heat, Debye temperature, entropy Grüneisen parameters and hardness. Further, CdSiP{sub 2} solar cell devices have been modeled; device physics and performance parameters are analyzed for zinc chalcogenide (ZnX; X = Se, Te) buffer layers. Simulation results for CdSiP{sub 2} thin layer solar cell show the maximum efficiency (25.7%) with ZnSe as the buffer layer.

Improving the Long-Term Stability of Perovskite Solar Cells with a Porous Al 2 O 3 Buffer Layer

KAUST Repository

Guarnera, Simone; Abate, Antonio; Zhang, Wei; Foster, Jamie M.; Richardson, Giles; Petrozza, Annamaria; Snaith, Henry J.

2015-01-01

© 2015 American Chemical Society. Hybrid perovskites represent a new paradigm for photovoltaics, which have the potential to overcome the performance limits of current technologies and achieve low cost and high versatility. However, an efficiency drop is often observed within the first few hundred hours of device operation, which could become an important issue. Here, we demonstrate that the electrode's metal migrating through the hole transporting material (HTM) layer and eventually contacting the perovskite is in part responsible for this early device degradation. We show that depositing the HTM within an insulating mesoporous "buffer layer" comprised of Al2O3 nanoparticles prevents the metal electrode migration while allowing for precise control of the HTM thickness. This enables an improvement in the solar cell fill factor and prevents degradation of the device after 350 h of operation. (Graph Presented).

Improving the Long-Term Stability of Perovskite Solar Cells with a Porous Al 2 O 3 Buffer Layer

KAUST Repository

Guarnera, Simone

2015-02-05

© 2015 American Chemical Society. Hybrid perovskites represent a new paradigm for photovoltaics, which have the potential to overcome the performance limits of current technologies and achieve low cost and high versatility. However, an efficiency drop is often observed within the first few hundred hours of device operation, which could become an important issue. Here, we demonstrate that the electrode\\'s metal migrating through the hole transporting material (HTM) layer and eventually contacting the perovskite is in part responsible for this early device degradation. We show that depositing the HTM within an insulating mesoporous "buffer layer" comprised of Al2O3 nanoparticles prevents the metal electrode migration while allowing for precise control of the HTM thickness. This enables an improvement in the solar cell fill factor and prevents degradation of the device after 350 h of operation. (Graph Presented).

Tetradymite layer assisted heteroepitaxial growth and applications

Science.gov (United States)

Stoica, Vladimir A.; Endicott, Lynn; Clarke, Roy; Uher, Ctirad

2017-08-01

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

Energy Technology Data Exchange (ETDEWEB)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

2016-01-28

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

Modified band alignment effect in ZnO/Cu2O heterojunction solar cells via Cs2O buffer insertion

Science.gov (United States)

Eom, Kiryung; Lee, Dongyoon; Kim, Seunghwan; Seo, Hyungtak

2018-02-01

The effects of a complex buffer layer of cesium oxide (Cs2O) on the photocurrent response in oxide heterojunction solar cells (HSCs) were investigated. A p-n junction oxide HSC was fabricated using p-type copper (I) oxide (Cu2O) and n-type zinc oxide (ZnO); the buffer layer was inserted between the Cu2O and fluorine-doped tin oxide (FTO). Ultraviolet-visible (UV-vis) and x-ray and ultraviolet photoelectron spectroscopy analyses were performed to characterize the electronic band structures of cells, both with and without this buffer layer. In conjunction with the measured band electronic structures, the significantly improved visible-range photocurrent spectra of the buffer-inserted HSC were analyzed in-depth. As a result, the 1 sun power conversion efficiency was increased by about three times by the insertion of buffer layer. The physicochemical origin of the photocurrent enhancement was mainly ascribed to the increased photocarrier density in the buffer layer and modified valence band offset to promote the effective hole transfer at the interface to FTO on the band-alignment model.

In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

Energy Technology Data Exchange (ETDEWEB)

Guseynov, R. R.; Tanriverdiyev, V. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede [Stony Brook, Stony Brook University (United States); Aliyeva, Ye. N.; Aliguliyeva, Kh. V.; Abdullayev, N. A., E-mail: abnadir@mail.ru; Mamedov, N. T. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2017-04-15

Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.

Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

International Nuclear Information System (INIS)

Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

2014-01-01

A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers

Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

International Nuclear Information System (INIS)

Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo

2013-01-01

Highlights: •2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure. •The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness. •The conditions for the disappearance of 2DHG are discussed. •Increasing buffer Al content provides better electron confinement. •Dislocation scattering is reduced in the DH-structure. -- Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG

In-plane aligned YBCO tape on textured YSZ buffer layer deposited on stainless steel substrate by laser ablation only with O{sup +} ion beam assistance

Energy Technology Data Exchange (ETDEWEB)

Huang Xintang [Huazhong Univ. of Sci. and Technol., Wuhan (China). Nat. Lab. of Laser Technol.]|[Huazhong Normal Univ., Wuhan, HB (China). Dept. of Physics; Wang Youqing; Wang Qiuliang; Chen Qingming [Huazhong Univ. of Sci. and Technol., Wuhan (China). Nat. Lab. of Laser Technol.

1999-08-16

In this paper we have prepared YSZ buffer layers on stainless steel substrates by laser ablation only with O{sup +} ion beam assistance and YBCO films on YSZ/steel consequently. The relevant parameters of YSZ and YBCO film deposition are indicated. (orig.) 8 refs.

The electron-electron instability in a spherical plasma structure with an intermediate double layer

International Nuclear Information System (INIS)

Lapuerta, V.; Ahedo, E.

2003-01-01

A linear dynamic model of a spherical plasma structure with an intermediate double layer is analyzed in the high-frequency range. The two ion populations tend to stay frozen in their stationary response and this prevents the displacement of the double layer. Different electron modes dominate the plasma dynamics in each quasineutral region. The electrostatic potential and the electron current are the magnitudes most perturbed. The structure develops a reactive electron-electron instability, which is made up of a countable family of eigenmodes. Space-charge effects must be included in the quasineutral regions to determine the eigenmode carrying the maximum growth rate. Except for very small Debye lengths, the fundamental eigenmode governs the instability. The growth rate for the higher harmonics approaches that of an infinite plasma. The instability modes develop mainly on the plasma at the high-potential side of the double layer. The influence of the parameters defining the stationary solution on the instability growth rate is investigated, and the parametric regions of stability are found. The comparison with a couple of experiments on plasma contactors is satisfactory

Stability enhancement of P3HT:PCBM polymer solar cells using thermally evaporated MoO3 anode buffer layer

Science.gov (United States)

Ameen, M. Yoosuf; Shamjid, P.; Abhijith, T.; Radhakrishnan, Thulasi; Reddy, V. S.

2018-02-01

Polymer solar cells have been fabricated with thermally evaporated MoO3 as anode buffer layer (ABL). The stability of MoO3 and PEDOT:PSS based devices was examined under different test conditions. The MoO3 based device exhibited a slightly better efficiency and significantly higher stability compared to PEDOT:PSS based device. At a relative humidity of 45% the unencapsulated PEDOT:PSS based device degraded completely within 96 h. On the other hand, MoO3 based device retained more than 60% of its initial efficiency after 96 h. The reason behind stability enhancement was investigated by measuring time-evolution of reflectance and hole-current. Experimental results revealed that the stability enhancement for MoO3 based device originates from the reduction in degradation of anode/active layer interface.

Cadmium free high efficiency Cu2ZnSn(S,Se4 solar cell with Zn1−xSnxOy buffer layer

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-06-01

Full Text Available We have investigated the simulation approach of a one-dimensional online simulator named A Device Emulation Program and Tool (ADEPT2.1 and the device performances of a thin film solar cell based on Cu2ZnSn(S,Se4 (CZTSSe absorber have been measured. Initiating with a thin film photovoltaic device structure consisting of n-ZnO:Al/i-ZnO/Zn1-xSnxOy (ZTO/CZTSSe/Mo/SLG stack, a graded space charge region (SCR and an inverted surface layer (ISL were inserted between the buffer and the absorber. The cadmium (Cd free ZTO buffer, a competitive substitute to the CdS buffer, significantly contributes to improve the open-circuit voltage, Voc without deteriorating the short-circuit current density, Jsc. The optimized solar cell performance parameters including Voc, Jsc, fill factor (FF, and efficiency (η were calculated from the current density-voltage curve, also known as J–V characteristic curve. The FF was determined as 73.17%, which in turns, yields a higher energy conversion efficiency of 14.09%.

Buffer capacity of biologics--from buffer salts to buffering by antibodies.

Science.gov (United States)

Karow, Anne R; Bahrenburg, Sven; Garidel, Patrick

2013-01-01

Controlling pH is essential for a variety of biopharmaceutical process steps. The chemical stability of biologics such as monoclonal antibodies is pH-dependent and slightly acidic conditions are favorable for stability in a number of cases. Since control of pH is widely provided by added buffer salts, the current study summarizes the buffer characteristics of acetate, citrate, histidine, succinate, and phosphate buffers. Experimentally derived values largely coincide with values calculated from a model that had been proposed in 1922 by van Slyke. As high concentrated protein formulations become more and more prevalent for biologics, the self-buffering potential of proteins becomes of relevance. The current study provides information on buffer characteristics for pH ranges down to 4.0 and up to 8.0 and shows that a monoclonal antibody at 50 mg/mL exhibits similar buffer capacity as 6 mM citrate or 14 mM histidine (pH 5.0-6.0). Buffer capacity of antibody solutions scales linearly with protein concentration up to more than 200 mg/mL. At a protein concentration of 220 mg/mL, the buffer capacity resembles the buffer capacity of 30 mM citrate or 50 mM histidine (pH 5.0-6.0). The buffer capacity of monoclonal antibodies is practically identical at the process relevant temperatures 5, 25, and 40°C. Changes in ionic strength of ΔI=0.15, in contrast, can alter the buffer capacity up to 35%. In conclusion, due to efficient self-buffering by antibodies in the pH range of favored chemical stability, conventional buffer excipients could be dispensable for pH stabilization of high concentrated protein solutions. Copyright © 2013 American Institute of Chemical Engineers.

Kinetics of formation of acrylamide and Schiff base intermediates from asparagine and glucose

DEFF Research Database (Denmark)

Hedegaard, Rikke Susanne Vingborg; Frandsen, Henrik; Skibsted, Leif H.

2008-01-01

From the concentration of glucose and asparagine as reactants and of acrylamide as product each determined by LC-MS during reaction in an acetonitrile/water (68:32) model system at pH 7.6 (0.04 M phosphate buffer) and from the relative concentration of the Schiff base intermediate, the decarboxyl......From the concentration of glucose and asparagine as reactants and of acrylamide as product each determined by LC-MS during reaction in an acetonitrile/water (68:32) model system at pH 7.6 (0.04 M phosphate buffer) and from the relative concentration of the Schiff base intermediate...

Ca/Alq3 hybrid cathode buffer layer for the optimization of organic solar cells based on a planar heterojunction

Science.gov (United States)

El Jouad, Z.; Barkat, L.; Stephant, N.; Cattin, L.; Hamzaoui, N.; Khelil, A.; Ghamnia, M.; Addou, M.; Morsli, M.; Béchu, S.; Cabanetos, C.; Richard-Plouet, M.; Blanchard, P.; Bernède, J. C.

2016-11-01

Use of efficient anode cathode buffer layer (CBL) is crucial to improve the efficiency of organic photovoltaic cells. Here we show that using a double CBL, Ca/Alq3, allows improving significantly cell performances. The insertion of Ca layer facilitates electron harvesting and blocks hole collection, leading to improved charge selectivity and reduced leakage current, whereas Alq3 blocks excitons. After optimisation of this Ca/Alq3 CBL using CuPc as electron donor, it is shown that it is also efficient when SubPc is substituted to CuPc in the cells. In that case we show that the morphology of the SubPc layer, and therefore the efficiency of the cells, strongly depends on the deposition rate of the SubPc film. It is necessary to deposit slowly (0.02 nm/s) the SubPc films because at higher deposition rate (0.06 nm/s) the films are porous, which induces leakage currents and deterioration of the cell performances. The SubPc layers whose formations are kinetically driven at low deposition rates are more uniform, whereas those deposited faster exhibit high densities of pinholes.

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Chiang, C.H.; Chen, K.M.; Wu, Y.H.; Yeh, Y.S.; Lee, W.I.; Chen, J.F.; Lin, K.L.; Hsiao, Y.L.; Huang, W.C.; Chang, E.Y.

2011-01-01

Mirror-like and pit-free non-polar a-plane (1 1 -2 0) GaN films are grown on r-plane (1 -1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature-deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer.

Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

Energy Technology Data Exchange (ETDEWEB)

Cerio, Frank

2013-09-14

The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

Intermixing at the heterointerface between ZnS Zn S,O bilayer buffer and CuInS2 thin film solar cell absorber

OpenAIRE

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H. W.; Fischer, Ch. H.; Lux Steiner, M.C.; Jung, Ch

2006-01-01

The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine has helped to achieve a similar efficiency as respective CdS buffered reference devices. After identifying the deposited Zn compound, as ZnS Zn S,O bi layer buffer in former in...

Aspects of the SrO-CuO-TiO₂ Ternary System Related to the Deposition of SrTiO₃ and Copper-Doped SrTiO₃ Thin-Film Buffer Layers

Energy Technology Data Exchange (ETDEWEB)

Ayala, Alicia [Univ. of New Mexico, Albuquerque, NM (United States)

2004-12-20

YBa₂Cu₃O_27-δ (YBCO) coated conductors are promising materials for large-scale superconductivity applications. One version of a YBCO coated conductor is based on ion beam assisted deposition (IBAD) of magnesium oxide (MgO) onto polycrystalline metal substrates. SrTiO₃ (STO) is often deposited by physical vapor deposition (PVD) methods as a buffer layer between the YBCO and IBAD MgO due to its chemical stability and lattice mismatch of only ~1.5% with YBCO. In this work, some aspects of the stability of STO with respect to copper (Cu) and chemical solution deposition of STO on IBAD MgO templates were examined. Solubility limits of Cu in STO were established by processing Cu-doped STO powders by conventional bulk preparation techniques. The maximum solubility of Cu in STO was ~1% as determined by transmission electron microscopy (TEM) and Rietveld refinements of x-ray diffraction (XRD) data. XRD analysis, performed in collaboration with NIST, on powder compositions on the STO/SrCuO₂ tie line did not identify any ternary phases. SrCu_0.10T_0.90O_y buffer layers were prepared by pulsed laser deposition (PLD) and CSD on IBAD MgO flexible metallic textured tapes. TEM analysis of a ~100 nm thick SrCu_0.10Ti_0.90O_y buffer layer deposited by PLD showed a smooth Cu-doped STO/MgO interface. A ~600 nm thick YBCO film, deposited onto the SrCu_0.10Ti_0.90O_y buffer by PLD, exhibited a T_c of 87 K and critical current density (J_c) of ~1 MA/cm². STO and Cu-doped STO thin films by CSD were ~30 nm thick. The in plane alignment (FWHM) after deposition of the STO improved by ~1° while it degraded by ~2° with the SrCu_0.05TiO_y buffer. YBCO was deposited by PLD on the STO and SrCu_0.05TiO_y buffers. The in plane alignment (FWHM) of the YBCO with the STO buffer layer

Structural study of intermediate phase in layered perovskite SrBi sub 2 Ta sub 2 O sub 9 single crystal

CERN Document Server

Onodera, A; Yamashita, H

2003-01-01

The crystal structure of an intermediate phase of Bi-layered ferroelectric SrBi sub 2 Ta sub 2 O sub 9 single crystals was studied by means of X-ray diffraction. An analysis of the extinction rules and X-ray intensities demonstrated that the crystal structure is orthorhombic with space group A2 sub 1 am in the ferroelectric phase and Amam in the intermediate phase; this conclusion is in good agreement with the findings of previous powder neutron diffraction studies.

Dynamics and mitigation of six pesticides in a "Wet" forest buffer zone.

Science.gov (United States)

Passeport, Elodie; Richard, Benjamin; Chaumont, Cédric; Margoum, Christelle; Liger, Lucie; Gril, Jean-Joël; Tournebize, Julien

2014-04-01

Pesticide pollution is one of the main current threats on water quality. This paper presents the potential and functioning principles of a "Wet" forest buffer zone for reducing concentrations and loads of glyphosate, isoproturon, metazachlor, azoxystrobin, epoxiconazole, and cyproconazole. A tracer injection experiment was conducted in the field in a forest buffer zone at Bray (France). A fine time-scale sampling enabled to illustrate that interactions between pesticides and forest buffer substrates (soil and organic-rich litter layer), had a retarding effect on molecule transfer. Low concentrations were observed for all pesticides at the forest buffer outlet thus demonstrating the efficiency of "Wet" forest buffer zone for pesticide dissipation. Pesticide masses injected in the forest buffer inlet directly determined concentration peaks observed at the outlet. Rapid and partially reversible adsorption was likely the major process affecting pesticide transfer for short retention times (a few hours to a few days). Remobilization of metazachlor, isoproturon, desmethylisoproturon, and AMPA was observed when non-contaminated water flows passed through the forest buffer. Our data suggest that pesticide sorption properties alone could not explain the complex reaction mechanisms that affected pesticide transfer in the forest buffer. Nevertheless, the thick layer of organic matter litter on the top of the forest soil was a key parameter, which enhanced partially reversible sorption of pesticide, thus retarded their transfer, decreased concentration peaks, and likely increased degradation of the pesticides. Consequently, to limit pesticide pollution transported by surface water, the use of already existing forest areas as buffer zones should be equally considered as the most commonly implemented grass buffer strips.

Effect of Initial Surface Quality on Final Roughness and Texture of Annealed Ni-5at.%W Tapes Coated with a Gd2Zr2O7 Buffer Layer

DEFF Research Database (Denmark)

Wulff, Anders Christian; Yue, Zhao; Mishin, Oleg

2012-01-01

Surface roughness of Ni-5at.%W tapes in coldrolled and annealed conditions after subsequent deposition of a Gd2Zr2O7 buffer layer has been studied as a function of the polishing grade, taking grain boundary grooving into account. It is found that annealing decreases the initial mean surface...... roughness achieved by mechanical polishing of the cold-rolled material, except after very fine polishing. Furthermore, compared to the surface of the tape annealed after fine polishing, the mean roughness slightly increases after the deposition of the buffer layer. Grain boundary grooving was found...... to impose a lower limit for the mean surface roughness. In the annealed tapes, the fraction of orientations within 5◦ from the ideal cube orientation was observed to be very sensitive to the surface roughness before annealing....

Novel oxide buffer approach for GaN integration on Si(111) platform through Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bi-layer

Energy Technology Data Exchange (ETDEWEB)

Tarnawska, Lidia

2012-12-19

Motivation: Preparation of GaN virtual substrates on large-scale Si wafers is intensively pursued as a cost-effective approach for high power/high frequency electronics (HEMT's etc.) and optoelectronic applications (LED, LASER). However, the growth of high quality GaN layers on Si is hampered by several difficulties mainly related to a large lattice mismatch (-17%) and a huge difference in the thermal expansion coefficient (56%). As a consequence, GaN epitaxial layers grown on Si substrates show a high number of defects (threading dislocations etc.), which severely deteriorate the overall quality of the GaN films. Additionally, due to the different thermal expansion coefficients of the substrate and the film, um-thick GaN layers crack during post-growth cooling. To solve these integration problems, different semiconducting (e.g. AlN, GaAs, ZnO, HfN) and insulating (e.g. Al{sub 2}O{sub 3}, MgO, LiGaO{sub 2}) buffer layers, separating the Si substrate from the GaN film, are applied. Goal: In this thesis, a novel buffer approach for the integration of GaN on Si is proposed and investigated. The new approach employs Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bilayer templates as a step-graded buffer to reduce the lattice mismatch between GaN and the Si(111) substrate. According to the bulk crystal lattices, since the Y{sub 2}O{sub 3} has an in-plane lattice misfit of -2% to Si, Sc{sub 2}O{sub 3} -7% to Y{sub 2}O{sub 3}, the lattice misfit between GaN and the substrate can be theoretically reduced by about 50% from -17% (GaN/Si) to -8% (GaN/Sc{sub 2}O{sub 3}). Experimental: The GaN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) heterostructures are prepared in a multichamber molecular beam epitaxy system on 4 inch Si(111) wafers. In order to obtain complete information on the structural quality of the oxide buffer as well as the GaN layer, synchrotron- and laboratory-based X-ray diffraction, transmission electron microscopy and photoluminescence measurements are performed. The

Intermediate layer observed by the impedance probe on board the S-310-3 sounding rocket

Energy Technology Data Exchange (ETDEWEB)

Watanabe, Y; Obayashi, T [Tokyo Univ. (Japan). Inst. of Space and Aeronautical Science

1977-08-01

The intermediate layer (or M layer) was detected at the height of 150-170 km in the nighttime ionospheric electron density profile measured by impedance probe on board the S-310-3 sounding rocket. This M layer was interpreted to be generated by the convergence effect of the ionization due to the west-east component of the solar tidal wind as suggested by K.Fujitaka. The altitude variation of the M layer during the course of a night is studied at three other locations with different latitudes. At Boulder (40/sup 0/N, 105/sup 0/W) and Wallops Island (38/sup 0/N, 75/sup 0/W) which have higher latitude than that of KSC(31/sup 0/N, 131/sup 0/E), the altitude of the observed M layers seems to be determined by the north-south component of the wind above about 150 km, by the west-east component of the wind below about 130 km in agreement with the drift theory. The altitude of the observed M layers at Arecibo (19/sup 0/N, 67/sup 0/W) located at lower latitude than that of KSC also coincides with the theoretical estimate when the direction of the north-south wind is assumed to be opposite to that prevailing in middle latitudes. Thus, M layer observations at these stations are consistent with the view that around the latitude range of KSC the north-south wind reverses direction and the west-east component of the wind has the dominant effect on the formation of the M layer.

Solution processed transition metal oxide anode buffer layers for efficiency and stability enhancement of polymer solar cells

Science.gov (United States)

Ameen, M. Yoosuf; Shamjid, P.; Abhijith, T.; Reddy, V. S.

2018-01-01

Polymer solar cells were fabricated with solution-processed transition metal oxides, MoO3 and V2O5 as anode buffer layers (ABLs). The optimized device with V2O5 ABL exhibited considerably higher power conversion efficiency (PCE) compared to the devices based on MoO3 and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) ABLs. The space charge limited current measurements and impedance spectroscopy results of hole-only devices revealed that V2O5 provided a very low charge transfer resistance and high hole mobility, facilitating efficient hole transfer from the active layer to the ITO anode. More importantly, incorporation of V2O5 as ABL resulted in substantial improvement in device stability compared to MoO3 and PEDOT:PSS based devices. Unencapsulated PEDOT:PSS-based devices stored at a relative humidity of 45% have shown complete failure within 96 h. Whereas, MoO3 and V2O5 based devices stored in similar conditions retained 22% and 80% of their initial PCEs after 96 h. Significantly higher stability of the V2O5-based device is ascribed to the reduction in degradation of the anode/active layer interface, as evident from the electrical measurements.

Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layer

International Nuclear Information System (INIS)

Shieh, Chen-Yu; Li, Zhen-Yu; Chang, Jenq-Yang; Chi, Gou-Chung

2015-01-01

In this work, a buffer layer of nitrided titanium (Ti) achieved through the nitridation of a Ti metal layer on a sapphire substrate was used for the epitaxial growth of InGaN-based light-emitting diodes (LEDs) achieved by low pressure metal-organic chemical vapor deposition. The effect of in-situ Ti metal nitridation on the performance of these InGaN-based LEDs was then investigated. It was very clear that the use of the nitrided Ti buffer layer (NTBL) induced the formation of a nanoscale epitaxial lateral overgrowth layer during the epitaxial growth. When evaluated by Raman spectroscopy, this epi-layer exhibited large in-plane compressive stress releasing with a Raman shift value of 567.9 cm -1 . Cathodoluminescence spectroscopy and transmission electron microscopy results indicated that the InGaN-based LEDs with an NTBL have improved crystal quality, with a low threading dislocations density being yielded via the strain relaxation in the InGaN-based LEDs. Based on the results mentioned above, the electroluminescence results indicate that the light performance of InGaN-based LEDs with an NTBL can be enhanced by 45% and 42% at 20 mA and 100 mA, respectively. These results suggest that the strain relaxation and quality improvement in the GaN epilayer could be responsible for the enhancement of emission power. - Highlights: • The crystal-quality of InGaN-based LEDs with NTBL by NELOG was improved. • The InGaN-based LEDs with NTBL have strain releases by NELOG. • The optical properties of InGaN-based LEDs were shown by CL and EL measurements

Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin cerium fluoride buffer layer

Science.gov (United States)

Lu, Hsin-Wei; Kao, Po-Ching; Chu, Sheng-Yuan

2016-09-01

In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3 film as an ultra-thin buffer layer between the ITO and NPB hole transport layer, with the structure configuration ITO/CeF3 (1 nm)/NPB (40 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The work function increased from 4.8 eV (standard ITO electrode) to 5.2 eV (1-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The turn-on voltage decreased from 4.2 V to 4.0 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 10820 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.5 cd/A when the 1-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

Clinical performance of a hybrid resin composite with and without an intermediate layer of flowable resin composite: a 7-year evaluation

DEFF Research Database (Denmark)

van Dijken, Jan W V; Pallesen, Ulla

2011-01-01

The objective of this prospective clinical follow up was to evaluate the long term clinical performance of a hybrid resin composite in Class II restorations with and without intermediate layer of flowable resin composite....

Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

Science.gov (United States)

Hankins, Matthew G [Albuquerque, NM

2009-10-06

Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

Intermediate Progenitor Cohorts Differentially Generate Cortical Layers and Require Tbr2 for Timely Acquisition of Neuronal Subtype Identity

Directory of Open Access Journals (Sweden)

Anca B. Mihalas

2016-06-01

Full Text Available Intermediate progenitors (IPs amplify the production of pyramidal neurons, but their role in selective genesis of cortical layers or neuronal subtypes remains unclear. Using genetic lineage tracing in mice, we find that IPs destined to produce upper cortical layers first appear early in corticogenesis, by embryonic day 11.5. During later corticogenesis, IP laminar fates are progressively limited to upper layers. We examined the role of Tbr2, an IP-specific transcription factor, in laminar fate regulation using Tbr2 conditional mutant mice. Upon Tbr2 inactivation, fewer neurons were produced by immediate differentiation and laminar fates were shifted upward. Genesis of subventricular mitoses was, however, not reduced in the context of a Tbr2-null cortex. Instead, neuronal and laminar differentiation were disrupted and delayed. Our findings indicate that upper-layer genesis depends on IPs from many stages of corticogenesis and that Tbr2 regulates the tempo of laminar fate implementation for all cortical layers.

Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

Science.gov (United States)

Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

2012-05-01

The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

Solvent effects of a dimethyldicyanoquinonediimine buffer layer as N-type material on the performance of organic photovoltaic cells.

Science.gov (United States)

Yang, Eui Yeol; Oh, Se Young

2014-08-01

In the present work, we have fabricated organic photovoltaic cells consisting of ITO/PEDOT:PSS/P3HT:PCBM/DMDCNQI/Al using a dip-coating method with various solvent systems. We have investigated solvent effects (such as solubility, viscosity and vapor pressure) in deposition of a thin DMDCNQI buffer layer on the performance of organic photovoltaic cells. The solvent system which had low viscosity and good solubility properties, made a dense and uniform DMDCNQI ultra thin film, resulting in a high performance device. In particular, a prepared organic photovoltaic cell was fabricated using a cosolvent system (methanol:methylenechloride = 3:1) and showed a maximum power conversion efficiency of 4.53%.

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

Science.gov (United States)

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

2005-02-01

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

The effect of metal-buffer bilayer drain/source electrodes on the operational stability of the organic field effect transistors

International Nuclear Information System (INIS)

Karimi-Alavijeh, H.R.; Ehsani, A.

2015-01-01

In this paper, we have investigated experimentally the effect of different drain/source (D/S) electrodes and charge injection buffer layers on the electrical properties and operational stability of a stilbene organic field effect transistor (OFET). The results show that the organic buffer layer of copper phthalocyanine (CuPc) considerably improves the electrical properties of the transistors, but has a negligible effect on their temporal behavior. On the other hand, inorganic metal-oxide buffer layer of molybdenum oxide (MoO 3 ) drastically changes both the electrical properties and operational stability. The functionalities of this metal-oxide tightly depend on the properties of the D/S metallic electrodes. OFETs with Al/MoO 3 as the bilayer D/S electrodes have the best electrical properties: field effect mobility μ eff = 0.32 cm 2 V −1 s −1 and threshold voltage V TH = − 5 V and the transistors with Ag/MoO 3 have the longest operational stability. It was concluded that the chemical stability of the metal/metal-oxide or metal/organic interfaces of the bilayer D/S electrodes determine the operational stability of the OFETs. - Highlights: • The effect of buffer layers on the performance of the stilbene OFETs has been investigated. • Inorganic buffer layer improved the electrical and temporal behaviors simultaneously. • Organic buffer layer only changes the electrical properties. • Chemical stability of the interfaces determines the operational stability of the transistor

Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

International Nuclear Information System (INIS)

Pantzas, Konstantinos; Patriarche, Gilles; Talneau, Anne; Youssef, Jamal Ben

2014-01-01

Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiO 2 /amorphous-YIG bilayer is formed and welds the garnet to silicon.

Assessment of polyelectrolyte coating stability under dynamic buffer conditions in CE.

Science.gov (United States)

Swords, Kyleen E; Bartline, Peter B; Roguski, Katherine M; Bashaw, Sarah A; Frederick, Kimberley A

2011-09-01

Dynamic buffer conditions are present in many electrophoretically driven separations. Polyelectrolyte multilayer coatings have been employed in CE because of their chemical and physical stability as well as their ease of application. The goal of this study is to measure the effect of dynamic changes in buffer pH on flow using a real-time method for measuring EOF. Polyelectrolyte multilayers (PEMs) were composed of pairs of strong or completely ionized polyelectrolytes including poly(diallyldimethylammonium) chloride and poly(styrene sulfonate) and weak or ionizable polyelectrolytes including poly(allylamine) and poly(methacrylic acid). Polyelectrolyte multilayers of varying thicknesses (3, 4, 7, 8, 15, or 16 layers) were also studied. While the magnitude of the EOF was monitored every 2 s, the buffer pH was exchanged from a relatively basic pH (7.1) to increasingly acidic pHs (6.6, 6.1, 5.5, and 5.1). Strong polyelectrolytes responded minimally to changes in buffer pH (10%) and sometimes irreversible changes were measured with weak polyelectrolytes. Thicker coatings resulted in a similar magnitude of response but were more likely to degrade in response to buffer pH changes. The most stable coatings were formed from thinner layers of strong polyelectrolytes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In situ analysis of the Zn(S,O) buffer layer preparation for chalcopyrite solar cells by Zn L-edge X-ray absorption spectroscopy.

Science.gov (United States)

Lauermann, Iver; Kropp, Timo; Vottier, Damien; Ennaoui, Ahmed; Eberhardt, Wolfgang; Aziz, Emad F

2009-02-23

Bridging the gap between high-vacuum soft X-ray absorption spectroscopy and real systems under ambient conditions probes chemical reactions in situ during deposition and annealing processes. The origin of highly efficient buffer layers in Zn(S,O) is the complex formation between Zn(2+) and the S=C group of thiourea (see schematic), which allows ligand-to-metal and metal-to-ligand charge transfer (LMCT and MLCT).

Role of intermediate metallic sub-layers in improving the efficiency of kesterite solar cells: concept and optimization

Science.gov (United States)

Ferhati, H.; Djeffal, F.

2018-03-01

In this work, versatile CdS/Cu 2 ZnSnS 4 (CZTS) solar cell designs based on intermediate metallic sub-layers (Au, Ti, and Ag) engineering are proposed for enhancing light-scattering behavior and reducing recombination losses. The idea behind this work is to generate optical confinement regions in the CZTS absorber layer to achieve an improved absorption and appropriate antireflection effects. Moreover, the ultra-thin metal at the CZTS/Mo interface can be helpful for reducing the series resistance, where it behaves like a blocking layer for the Sulfur diffusion. We further combine the proposed designs with Particle Swarm Optimization (PSO)-based approach to achieve broadband absorption and boost the conversion efficiency. It is found that the optimized design with Ti sub-layer improves the CZTS solar cell properties, where it yields 31% improvement in short-circuit current and 60% in the power efficiency over the conventional one. Therefore, the optimized designs provide the opportunity for bridging the gap between improving the optical behavior and reducing the recombination losses.

High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass

Science.gov (United States)

Colegrove, E.; Banai, R.; Blissett, C.; Buurma, C.; Ellsworth, J.; Morley, M.; Barnes, S.; Gilmore, C.; Bergeson, J. D.; Dhere, R.; Scott, M.; Gessert, T.; Sivananthan, Siva

2012-10-01

Multiple polycrystalline CdS/CdTe solar cells with efficiencies greater than 15% were produced on buffered, commercially available Pilkington TEC Glass at EPIR Technologies, Inc. (EPIR, Bolingbrook, IL) and verified by the National Renewable Energy Laboratory (NREL). n-CdS and p-CdTe were grown by chemical bath deposition (CBD) and close space sublimation, respectively. Samples with sputter-deposited CdS were also investigated. Initial results indicate that this is a viable dry-process alternative to CBD for production-scale processing. Published results for polycrystalline CdS/CdTe solar cells with high efficiencies are typically based on cells using research-grade transparent conducting oxides (TCOs) requiring high-temperature processing inconducive to low-cost manufacturing. EPIR's results for cells on commercial glass were obtained by implementing a high-resistivity SnO2 buffer layer and by optimizing the CdS window layer thickness. The high-resistivity buffer layer prevents the formation of CdTe-TCO junctions, thereby maintaining a high open-circuit voltage and fill factor, whereas using a thin CdS layer reduces absorption losses and improves the short-circuit current density. EPIR's best device demonstrated an NREL-verified efficiency of 15.3%. The mean efficiency of hundreds of cells produced with a buffer layer between December 2010 and June 2011 is 14.4%. Quantum efficiency results are presented to demonstrate EPIR's progress toward NREL's best-published results.

CHF enhancement through Pressurized Intermediate Layer in IVR-ERVC Strategy

International Nuclear Information System (INIS)

Park, Seong Dae; Bang, In Cheol

2014-01-01

The molten fuel is sequentially relocated to bottom of reactor vessel. In-vessel retention through the external reactor vessel cooling (IVR-ERVC) strategy has been adapted to some reactors at this situation in order to prevent the progression of an accident. The limitation of IVR-ERVC strategy is CHF phenomenon on the outer wall of reactor vessel. The boiling is main heat transfer mode to remove decay heat between the reactor vessel and the coolant surrounding the reactor vessel. Heated molten radioactive material is leaked. The fuel coolant interaction (FCI) phenomenon could cause the steam explosion in a state of fully flooding condition. Therefore, the CHF should be enhanced in order to be a successful IVR-ERVC strategy. Related studies were performed to confirm the CHF limit with UPLU, SBLB, KAIST and UNIST test facilities The recommendations to increase CHF include coating some materials on the vessel outer surface, increasing the reactor cavity flood level and streamlining the gap between the vessel and the vessel insulation. Recently, flooding the liquid metal is proposed to prevent the boiling itself. In this work, the effects of pressurized liquid layer inserted between the reactor vessel and flooded coolant was studied. Suitable reactor geometry was also presented to apple this concept. Generally, CHF is increased as high pressure was applied until about 1/3 of critical pressure. The limit of IVR-ERVC strategy could overcome by using pressurized intermediate layer. The CFD analysis was performed to confirm the feasibility of pressurized IVR-ERVC system. There are enough thermal margins for due to the enlarged heat transfer area and the convection heat transfer

CHF enhancement through Pressurized Intermediate Layer in IVR-ERVC Strategy

Energy Technology Data Exchange (ETDEWEB)

Park, Seong Dae; Bang, In Cheol [Ulsan National Institute of Science and Technology, Ulsan (Korea, Republic of)

2014-05-15

The molten fuel is sequentially relocated to bottom of reactor vessel. In-vessel retention through the external reactor vessel cooling (IVR-ERVC) strategy has been adapted to some reactors at this situation in order to prevent the progression of an accident. The limitation of IVR-ERVC strategy is CHF phenomenon on the outer wall of reactor vessel. The boiling is main heat transfer mode to remove decay heat between the reactor vessel and the coolant surrounding the reactor vessel. Heated molten radioactive material is leaked. The fuel coolant interaction (FCI) phenomenon could cause the steam explosion in a state of fully flooding condition. Therefore, the CHF should be enhanced in order to be a successful IVR-ERVC strategy. Related studies were performed to confirm the CHF limit with UPLU, SBLB, KAIST and UNIST test facilities The recommendations to increase CHF include coating some materials on the vessel outer surface, increasing the reactor cavity flood level and streamlining the gap between the vessel and the vessel insulation. Recently, flooding the liquid metal is proposed to prevent the boiling itself. In this work, the effects of pressurized liquid layer inserted between the reactor vessel and flooded coolant was studied. Suitable reactor geometry was also presented to apple this concept. Generally, CHF is increased as high pressure was applied until about 1/3 of critical pressure. The limit of IVR-ERVC strategy could overcome by using pressurized intermediate layer. The CFD analysis was performed to confirm the feasibility of pressurized IVR-ERVC system. There are enough thermal margins for due to the enlarged heat transfer area and the convection heat transfer.

Surface modification by preparation of buffer zone in glow-discharge plasma

International Nuclear Information System (INIS)

Cho, D.L.

1986-01-01

Reactive species, energetic particles, and uv radiation in the plasma created by a glow discharge strongly interact with solid surfaces under the influence of the plasma. As a result of the strong interaction, various physical and chemical reactions, unique and advantageous for the surface modification of solid materials, occur on the solid surfaces. The surface modification is carried out through formation of a thin buffering layer on the solid surface. The preparation of a buffer zone on solid surfaces for surface modification is described. Two kinds of a buffer zone are prepared by plasma polymerization, or simultaneous sputter deposition of electrode material with plasma polymerization: a transitional buffer zone and a graded buffer zone. Important factors for preparation of the buffer zone (pre-conditioning of a substrate surface, thin-film deposition, post-treatment of the film, magnetron discharge, energy input, geometry of a substrate and a plasma) are discussed

Scientific Applications Performance Evaluation on Burst Buffer

KAUST Repository

Markomanolis, George S.

2017-10-19

Parallel I/O is an integral component of modern high performance computing, especially in storing and processing very large datasets, such as the case of seismic imaging, CFD, combustion and weather modeling. The storage hierarchy includes nowadays additional layers, the latest being the usage of SSD-based storage as a Burst Buffer for I/O acceleration. We present an in-depth analysis on how to use Burst Buffer for specific cases and how the internal MPI I/O aggregators operate according to the options that the user provides during his job submission. We analyze the performance of a range of I/O intensive scientific applications, at various scales on a large installation of Lustre parallel file system compared to an SSD-based Burst Buffer. Our results show a performance improvement over Lustre when using Burst Buffer. Moreover, we show results from a data hierarchy library which indicate that the standard I/O approaches are not enough to get the expected performance from this technology. The performance gain on the total execution time of the studied applications is between 1.16 and 3 times compared to Lustre. One of the test cases achieved an impressive I/O throughput of 900 GB/s on Burst Buffer.

Development of MoOx thin films as back contact buffer for CdTe solar cells in substrate configuration

International Nuclear Information System (INIS)

Gretener, C.; Perrenoud, J.; Kranz, L.; Baechler, C.; Yoon, S.; Romanyuk, Y.E.; Buecheler, S.; Tiwari, A.N.

2013-01-01

Molybdenum oxide compounds exhibit unique electrical and optical properties depending on oxygen vacancy concentration and composition and therefore, have recently attracted a lot of attention as a hole transport layer in various devices. In this work CdTe solar cells in substrate configuration were grown with evaporated MoO x back contact buffer layers and efficiencies of up to 10% could be achieved without using Cu in the back contact processing. The buffer layer – at the CdTe/back contact interface – in the finished cell was found to consist of MoO 2 phase instead of the expected MoO 3 phase as observed in as-deposited or annealed MoO x layers without CdTe deposition. In order to obtain MoO x buffer layers with desired stoichiometry, MoO x thin films were deposited by radio-frequency sputtering under different growth conditions. The chemical phase, composition, microstructure and optical properties of such layers were studied for their possible use in CdTe solar cells. - Highlights: ► MoO x is used as a back contact buffer in CdTe solar cells in substrate configuration. ► Efficiency of 10.0% was achieved without the addition of Cu. ► The back contact buffer in the finished device consists only of MoO 2 . ► Phases and microstructure of MoO x can be controlled by sputtering conditions

Magnetic tunnel junction device having an intermediate layer

NARCIS (Netherlands)

2001-01-01

A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the multi-layer structure also includes an

Characteristic of Ti-based PbO{sub 2} anodes with SnO{sub 2}+Sb{sub 2}O{sub 3} intermediate layers

Energy Technology Data Exchange (ETDEWEB)

Wang, Y.; Tong, H.; Xu, W. [Yangzhou Univ., College of Chemistry and Chemical Engineering, Yangzhou (China)

2006-07-01

Ceramic coatings are used in many electrochemical applications, such as organic synthetic applications, wastewater treatment and oxygen production. These processes typically occur in aqueous sulphuric acid. Desirable features for electrode materials include electro-catalytic activity, high stability, low cost, good overall performance under mild conditions and commercial availability. Lead dioxide exhibits excellent chemical stability, high conductivity, high overpotential for oxygen evolution and lower cost in an acid medium. Studies have shown that the stability of active coating prepared by depositing lead dioxide on titanium substrate is poor. In order to solve this problems, methods of doping expensive noble metals or adding an intermediate layer have been examined. Electrode coatings are very sensitive to preparation procedures, in which precursors play an important role in the surface morphology, microstructure, final composition and stability of anodes. However, appreciable inorganic salt loss has been reported using traditional precursors. A polymeric precursor (PP) method commonly used in the preparation of nano-particles has certain advantages, such as easy manipulation and insensitivity to the presence of water. This study characterized the surface morphology and electrochemical behaviour of titanium (Ti)/tin oxide (SnO{sub 2}) plus antimony oxide ((Sb{sub 2}O{sub 3})/lead dioxide (PbO{sub 2}) anode with SnO{sub 2} plus Sb{sub 2}O{sub 3} intermediate coatings. The electrochemical performance of Ti/SnO{sub 2}+Sb{sub 2}O{sub 3}/PbO{sub 2} anode preparing intermediate layer by the PP method was compared with alcohol precursors. It was concluded that adding SnO{sub 2}+Sb2O{sub 3} intermediate layer to Ti/PbO{sub 2} anodes could enhance the lifetime and stability of the anodes, thus its performance. 10 refs., 2 tabs.

Observation of hole injection boost via two parallel paths in Pentacene thin-film transistors by employing Pentacene: 4, 4″-tris(3-methylphenylphenylamino triphenylamine: MoO3 buffer layer

Directory of Open Access Journals (Sweden)

Pingrui Yan

2014-11-01

Full Text Available Pentacene organic thin-film transistors (OTFTs were prepared by introducing 4, 4″-tris(3-methylphenylphenylamino triphenylamine (m-MTDATA: MoO3, Pentacene: MoO3, and Pentacene: m-MTDATA: MoO3 as buffer layers. These OTFTs all showed significant performance improvement comparing to the reference device. Significantly, we observe that the device employing Pentacene: m-MTDATA: MoO3 buffer layer can both take advantage of charge transfer complexes formed in the m-MTDATA: MoO3 device and suitable energy level alignment existed in the Pentacene: MoO3 device. These two parallel paths led to a high mobility, low threshold voltage, and contact resistance of 0.72 cm2/V s, −13.4 V, and 0.83 kΩ at Vds = − 100 V. This work enriches the understanding of MoO3 doped organic materials for applications in OTFTs.

Daytime descending intermediate layers observed over a sub-tropical Indian station Waltair during low-solar activity period

Directory of Open Access Journals (Sweden)

K. Niranjan

2010-03-01

Full Text Available Study on daytime descending intermediate layer over subtropical Indian station Waltair (17.7° N, 83.3° E geographic, 6.4° N, 10° E geomagnetic, 20° N dip located in the equatorial anomaly transition region, using an IPS 42 Digital Ionosonde during the low solar activity year 2004 showed that the layers occur in the altitude range of 140–160 km with maximum occurrence during winter solstice. The layers observed during daytime occur with a double peak variation throughout the year with less occurrence probability and shorter duration presence during forenoon hours. The morning layer descent was associated with a density increase where as during afternoon hours a decrease in density was observed. The downward drift velocity was about 8 km/h during morning hours and between 7–11 km/h during afternoon hours, with a low descent rate of around 4.5 km/h during summer morning hours. The results indicate the presence of a 6 h tide at this location as observed from the characteristics of the descending layers, unlike at majority of locations where a significant semi diurnal trend is observed. The study brings out the complex nature of the tidal interaction at different locations.

A study on manufacturing and construction method of buffer

International Nuclear Information System (INIS)

Chijimatsu, Masakazu; Sugita, Yutaka; Amemiya, Kiyoshi

1999-09-01

As an engineered barrier system in the geological disposal of high-level waste, multibarrier system is considered. Multibarrier system consists of the vitrified waste, the overpack and the buffer. Bentonite is one of the potential material as the buffer because of its low water permeability, self-sealing properties, radionuclides adsorption and retardation properties, thermal conductivity, chemical buffering properties, overpack supporting properties, stress buffering properties, etc. In order to evaluate the functions of buffer, a lot of experiments has been conducted. The evaluations of these functions are based on the assumption that the buffer is emplaced or constructed in the disposal tunnel (or disposal pit) properly. Therefore, it is necessary to study on the manufacturing / construction method of buffer. As the manufacturing / construction technology of the buffer, the block installation method and in-situ compaction method, etc, are being investigated. The block installation method is to emplace the buffer blocks manufactured in advance at the ground facility, and construction processes of the block installation method at the underground will be simplified compared with the in-situ compaction method. On the other hand, the in-situ compaction method is to introduce the buffer material with specified water content into the disposal tunnel and to make the buffer with high density at the site using a compaction machine. In regard to the in-situ compaction method, it is necessary to investigate the optimum finished thickness of one layer because it is impossible to construct the buffer at one time. This report describes the results of compaction property test and the summary of the past investigation results in connection with the manufacturing / construction method. Then this report shows the construction method that will be feasible in the actual disposal site. (J.P.N.)

Fabrication of 5 cm long epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} single buffer layer on textured Ni-5%W substrate for YBCO coated conductors via dip-coating PACSD method

Energy Technology Data Exchange (ETDEWEB)

Lei, M.; Wang, W.T.; Pu, M.H.; Yang, X.S.; He, L.J. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Science and Engineering, University of New South Wales, Sydney 2052, New South Wales (Australia); Zhao, Y., E-mail: yzhao@home.swjtu.edu.cn [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Science and Engineering, University of New South Wales, Sydney 2052, New South Wales (Australia)

2011-11-15

Epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} single buffer layer for YBCO coated conductors was deposited via fluorine-free dip-coating CSD. Flat, dense and crack-free SCO films with sharp (2 0 0) c-axis texture were obtained by carefully controlling the processing. YBCO thin films with a homogeneous surface microstructure were deposited on the SCO-buffered NiW substrate via CSD approach. Five centimeters long epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} (SCO) single buffer layer for YBCO coated conductors was deposited via dip-coating polymer-assisted chemical solution deposition (PACSD) approach on bi-axially textured Ni-5%W (2 0 0) alloy substrate. The film formation and texture evolution were investigated using X-ray diffraction and scanning electron microscopy. Flat, dense and crack-free SCO films with sharp (2 0 0) c-axis texture were obtained by way of carefully controlling the concentration of precursor solution, withdrawing speed, annealing temperature and dwelling time. On consideration of both microstructure and texture, epitaxial SCO single buffer layers were fabricated using precursor solution of 0.3 M cationic concentration, the withdrawing speed of 10 mm/min and heat treatment at 1100 deg. C in Ar-5%H{sub 2} mixture gas for 0.5 h. Epitaxial YBCO thin films with a homogeneous surface microstructure were deposited on the SCO-buffered NiW substrate via dip-coating PACSD approach. The PACSD approach was a promising way to fabricate long and low-cost YBCO coated conductors.

Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer.

Science.gov (United States)

Joo, Min-Kyu; Moon, Byoung Hee; Ji, Hyunjin; Han, Gang Hee; Kim, Hyun; Lee, Gwanmu; Lim, Seong Chu; Suh, Dongseok; Lee, Young Hee

2017-02-08

As the thickness becomes thinner, the importance of Coulomb scattering in two-dimensional layered materials increases because of the close proximity between channel and interfacial layer and the reduced screening effects. The Coulomb scattering in the channel is usually obscured mainly by the Schottky barrier at the contact in the noise measurements. Here, we report low-temperature (T) noise measurements to understand the Coulomb scattering mechanism in the MoS 2 channel in the presence of h-BN buffer layer on the silicon dioxide (SiO 2 ) insulating layer. One essential measure in the noise analysis is the Coulomb scattering parameter (α SC ) which is different for channel materials and electron excess doping concentrations. This was extracted exclusively from a 4-probe method by eliminating the Schottky contact effect. We found that the presence of h-BN on SiO 2 provides the suppression of α SC twice, the reduction of interfacial traps density by 100 times, and the lowered Schottky barrier noise by 50 times compared to those on SiO 2 at T = 25 K. These improvements enable us to successfully identify the main noise source in the channel, which is the trapping-detrapping process at gate dielectrics rather than the charged impurities localized at the channel, as confirmed by fitting the noise features to the carrier number and correlated mobility fluctuation model. Further, the reduction in contact noise at low temperature in our system is attributed to inhomogeneous distributed Schottky barrier height distribution in the metal-MoS 2 contact region.

Epitaxial growth of SrTiO3 (001) films on multilayer buffered GaN (0002) by pulsed laser deposition

International Nuclear Information System (INIS)

Luo, W B; Jing, J; Shuai, Y; Zhu, J; Zhang, W L; Zhou, S; Gemming, S; Du, N; Schmidt, H

2013-01-01

SrTiO 3 films were grown on CeO 2 /YSZ/TiO 2 multilayer buffered GaN/Al 2 O 3 (0001) substrates with and without the YBa 2 Cu 3 O 7-x (YBCO) bridge layer by pulsed laser deposition (PLD). The deposition process of the buffer layers was in situ monitored by reflection high-energy electron diffraction. The crystallographical orientation of the heterostructure was studied by x-ray diffraction (XRD). With the introduction of the YBCO (001) layer, the STO (001) film was epitaxially grown on the GaN substrate. There were three sets of inplane domains separated from each other by 30° in both STO and YBCO buffer layers. The epitaxial relationship was STO (002)[110]∥YBCO(001)[110]∥CeO 2 (002)[010]∥YSZ (002)[010]∥GaN(0001)[1 1 -2 0] according to XRD results. By comparing the orientation of STO grown on GaN with and without the YBCO top buffer layer, the surface chemical bonding was found to be a very important factor in determining the orientation relationship of STO.

Measurement of kernel swelling and buffer densification in irradiated UCO-TRISO particles

Energy Technology Data Exchange (ETDEWEB)

Bower, Gordon R., E-mail: bowegr@inl.gov [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID, 83415-6188 (United States); Ploger, Scott A.; Demkowicz, Paul A. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID, 83415-6188 (United States); Hunn, John D. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN, 37830-6093 (United States)

2017-04-01

Radiation-induced volume changes in the fuel kernels and buffer layers of UCO-TRISO particles irradiated to an average burnup of 16.1% FIMA have been determined. Measurements of particle dimensions were made on polished cross-sections of 56 irradiated particles at several different polish planes. The data were then analyzed to compute the equivalent spherical diameters of the kernels and the various coating layers, and these were compared to the average as-fabricated values to determine changes due to irradiation. The kernel volume was found to have increased by an average of 26 ± 6%. Buffer volume decreased by an average of 39 ± 2% due to densification.

Effect of various intermediate ceramic layers on the interfacial stability of zirconia core and veneering ceramics.

Science.gov (United States)

Yoon, Hyung-In; Yeo, In-Sung; Yi, Yang-Jin; Kim, Sung-Hun; Lee, Jai-Bong; Han, Jung-Suk

2015-01-01

The purposes of this study were to evaluate the effects of intermediate ceramics on the adhesion between the zirconia core and veneer ceramics. The polished surfaces of fully sintered Y-TZP blocks received three different treatments: (1) connector (C), (2) liner (L) or (3) wash layer (W). All the treated zirconia blocks were veneered with either (a) fluorapatite glass-ceramic (E) or (b) feldspathic porcelain (V) and divided into four groups (CE, CV, LE and WV). For the control group, the testing surfaces of metal blocks were veneered with feldspathic porcelain (VM). A half of the samples in each group (n = 21) were exposed to thermocycling, while the other half of the specimens were stored at room temperature under dry conditions. All specimens were subjected to the shear test and the failed surfaces were microscopically examined. The elemental distribution at the zirconia core/veneer interface was analyzed. The specimens in Groups CE and CV exhibited significantly greater mean bond strength values than those in Groups LE and WV, respectively (p ceramic substances into the zirconia surface. A glass-ceramic based connector is significantly more favorable to core/veneer adhesion than the other intermediate ceramics evaluated in the study. However, thermal cycling affected the bond strength at the core/veneer interface differently according to the intermediate ceramics.

Nature of Y1Ba2Cu3O7 nucleation centers on ceria buffers

International Nuclear Information System (INIS)

Solovyov, Vyacheslav F; Li Qiang; Qing Jie; Zhou Juan; Develos-Bagarinao, Katherine

2010-01-01

The purpose of this study is to enhance properties of the second-generation wires by increasing the density of Y 1 Ba 2 Cu 3 O 7 (YBCO) nucleation centers on the surface of the ceria buffer. To identify the nature of the nucleation centers, we compare nucleation kinetics and performance of YBCO layers deposited by the metal-organic process on a standard RABiTS tape to YBCO on ceria buffers with well-controlled structure and surface morphology. The structure of the YBCO layer at the early stage of nucleation and growth is determined by high-flux synchrotron x-ray diffraction. It is shown that the best buffers exhibit high YBCO nucleation rates and produce YBCO nuclei with the least cation disorder. The high YBCO nucleation rate is associated with a high density of threading dislocation outcrops. A strategy for buffer optimization is identified.

The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films

International Nuclear Information System (INIS)

Li Jianjun; Li Ping; Zhang Guojun; Yu Jun; Wu Yunyi; Wen Xinyi

2011-01-01

A series of PbZr 0.58 Ti 0.42 O 3 (PZT) thin films with various Bi 3.25 La 0.75 Ti 3 O 12 (BLT) buffer layer thicknesses were deposited on Pt/TiO 2 /SiO 2 /p-Si(100) substrates by RF magnetron sputtering. The X-ray diffraction measurements of PZT film and PZT/BLT multilayered films illustrate that the pure PZT film shows (111) preferential orientation, and the PZT/BLT films show (110) preferential orientation with increasing thickness of the BLT layer. There are no obvious diffraction peaks for the BLT buffer layer in the multilayered films, for interaction effect between the bottom BLT and top PZT films during annealing at the same time. From the surface images of field-emission scanning electron microscope, there are the maximum number of largest-size grains in PZT/BLT(30 nm) film among all the samples. The growth direction and grain size have significant effects on ferroelectric properties of the multilayered films. The fatigue characteristics of PZT and PZT/BLT films suggest that 30-nm-thick BLT is just an effective buffer layer enough to alleviate the accumulation of oxygen vacancies near the PZT/BLT interface. The comparison of these results with that of PZT/Pt/TiO 2 /SiO 2 /p-Si(100) basic structured film suggests that the buffer layer with an appropriate thickness can improve the ferroelectric properties of multilayered films greatly.

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4}-based thin-film photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Varley, J. B.; Lordi, V. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); He, X.; Rockett, A. [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

2016-01-14

We investigate point defects in CdS buffer layers that may arise from intermixing with Cu(In,Ga)Se{sub 2} (CIGSe) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber layers in thin-film photovoltaics (PV). Using hybrid functional calculations, we characterize the migration barriers of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities and assess the activation energies necessary for their diffusion into the bulk of the buffer. We find that Cu, In, and Ga are the most mobile defects in CIGS-derived impurities, with diffusion expected to proceed into the buffer via interstitial-hopping and cadmium vacancy-assisted mechanisms at temperatures ∼400 °C. Cu is predicted to strongly favor migration paths within the basal plane of the wurtzite CdS lattice, which may facilitate defect clustering and ultimately the formation of Cu-rich interfacial phases as observed by energy dispersive x-ray spectroscopic elemental maps in real PV devices. Se, Zn, and Sn defects are found to exhibit much larger activation energies and are not expected to diffuse within the CdS bulk at temperatures compatible with typical PV processing temperatures. Lastly, we find that Na interstitials are expected to exhibit slightly lower activation energies than K interstitials despite having a larger migration barrier. Still, we find both alkali species are expected to diffuse via an interstitially mediated mechanism at slightly higher temperatures than enable In, Ga, and Cu diffusion in the bulk. Our results indicate that processing temperatures in excess of ∼400 °C will lead to more interfacial intermixing with CdS buffer layers in CIGSe devices, and less so for CZTSSe absorbers where only Cu is expected to significantly diffuse into the buffer.

The buffer effect in neutral electrolyte supercapacitors

DEFF Research Database (Denmark)

Thrane Vindt, Steffen; Skou, Eivind M.

2016-01-01

The observation that double-layer capacitors based on neutral aqueous electrolytes can have significantly wider usable potential windows than those based on acidic or alkaline electrolytes is studied. This effect is explained by a local pH change taking place at the electrode surfaces, leading...... potassium nitrate as the electrolyte and potassium phosphates as the buffer system....

Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

Science.gov (United States)

Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

2017-03-01

Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

Development of MoO{sub x} thin films as back contact buffer for CdTe solar cells in substrate configuration

Energy Technology Data Exchange (ETDEWEB)

Gretener, C., E-mail: christina.gretener@empa.ch [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Perrenoud, J.; Kranz, L.; Baechler, C. [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Yoon, S. [Laboratory for Solid State Chemistry and Catalysis, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Romanyuk, Y.E.; Buecheler, S.; Tiwari, A.N. [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland)

2013-05-01

Molybdenum oxide compounds exhibit unique electrical and optical properties depending on oxygen vacancy concentration and composition and therefore, have recently attracted a lot of attention as a hole transport layer in various devices. In this work CdTe solar cells in substrate configuration were grown with evaporated MoO{sub x} back contact buffer layers and efficiencies of up to 10% could be achieved without using Cu in the back contact processing. The buffer layer – at the CdTe/back contact interface – in the finished cell was found to consist of MoO{sub 2} phase instead of the expected MoO{sub 3} phase as observed in as-deposited or annealed MoO{sub x} layers without CdTe deposition. In order to obtain MoO{sub x} buffer layers with desired stoichiometry, MoO{sub x} thin films were deposited by radio-frequency sputtering under different growth conditions. The chemical phase, composition, microstructure and optical properties of such layers were studied for their possible use in CdTe solar cells. - Highlights: ► MoO{sub x} is used as a back contact buffer in CdTe solar cells in substrate configuration. ► Efficiency of 10.0% was achieved without the addition of Cu. ► The back contact buffer in the finished device consists only of MoO{sub 2}. ► Phases and microstructure of MoO{sub x} can be controlled by sputtering conditions.

Formation of a ZnS Zn S,O bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition

OpenAIRE

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Allsop, N.; Lauermann, I.; Schock, H. W.; Lux Steiner, M.C

2006-01-01

The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine, has helped to achieve a similar efficiency as respective CdS buffered reference devices. In order to shed light on the differences of other Zn compound buffers deposited in con...

Enhancement in electrical properties of ITO/PEDOT:PSS/PTCDA/Ag by using calcium buffer layer

International Nuclear Information System (INIS)

Tahir, Muhammad; Hassan Sayyad, Muhammad; Wahab, Fazal; Aziz, Fakhra; Ullah, Irfan; Khan, Gulzar

2015-01-01

This paper reports on electrical characterization of ITO/PEDOT:PSS/PTCDA/Ca/Ag device based on 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) and calcium (Ca) buffer layer with improved junction properties. The I–V characteristics have been utilized to extract various electrical parameters such as ideality factor (n), barrier height (ϕ B ) and series resistance R s , which are found to be 1.9, 0.79 eV and 2.5 kΩ, respectively. The device shows good rectifying behavior, with a rectification ratio of 528, and also field-lowering mechanism with a linear dependence of log I on V 1/2 . The device reported in the present work shows 50% improvement in the rectification ratio and ideality factor as compared to our previously fabricated device. It appears from the experimental data that the transport mechanism in the PTCDA thin film is dominated by the Poole–Frenkel model of thermionic emission, which may be associated with high density of structural defects or traps present in the film

Chemical solution deposited BaPbO3 buffer layers for lead zirconate titanate ferroelectric films

International Nuclear Information System (INIS)

Tseng, T.-K.; Wu, J.-M.

2005-01-01

Conductive perovskite BaPbO 3 (BPO) films have been prepared successfully by chemical solution deposition method through spin-coating on Pt/Ti/SiO 2 /Si substrates. The choice of baking temperature is a key factor on the development of conducting BPO perovskite phase. When the baking temperature is higher than 350 deg. C, the BPO films contain a high content of BaCO 3 phase after annealing at temperatures higher than 500 deg. C. If the baking temperature is chosen lower than 300 deg. C, such as 200 deg. C, the annealed BPO films consist mostly of perovskite with only traces of BaCO 3 . Choosing 200 deg. C as the baking temperature, the BPO films developed single perovskite phase at temperatures as low as 550 deg. C. The perovskite BPO phase is stable in the range of 550-650 deg. C and the measured sheet resistance of the BPO films is about 2-3 Ω/square. The perovskite BPO film as a buffer layer provides improvement in electric properties of lead zirconate titanate films

Enhancement in electrical properties of ITO/PEDOT:PSS/PTCDA/Ag by using calcium buffer layer

Energy Technology Data Exchange (ETDEWEB)

Tahir, Muhammad [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology Topi, KPK 23640 (Pakistan); Department of Physics, Abdul Wali Khan University Mardan, 23200 KPK (Pakistan); Hassan Sayyad, Muhammad [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology Topi, KPK 23640 (Pakistan); Wahab, Fazal [Department of Physics, Abdul Wali Khan University Mardan, 23200 KPK (Pakistan); Aziz, Fakhra, E-mail: fakhra69@yahoo.com [Department of Electronics, Jinnah College for Women, University of Peshawar, Peshawar 25120 (Pakistan); Ullah, Irfan; Khan, Gulzar [Department of Physics, Abdul Wali Khan University Mardan, 23200 KPK (Pakistan)

2015-06-15

This paper reports on electrical characterization of ITO/PEDOT:PSS/PTCDA/Ca/Ag device based on 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) and calcium (Ca) buffer layer with improved junction properties. The I–V characteristics have been utilized to extract various electrical parameters such as ideality factor (n), barrier height (ϕ{sub B}) and series resistance R{sub s}, which are found to be 1.9, 0.79 eV and 2.5 kΩ, respectively. The device shows good rectifying behavior, with a rectification ratio of 528, and also field-lowering mechanism with a linear dependence of log I on V{sup 1/2}. The device reported in the present work shows 50% improvement in the rectification ratio and ideality factor as compared to our previously fabricated device. It appears from the experimental data that the transport mechanism in the PTCDA thin film is dominated by the Poole–Frenkel model of thermionic emission, which may be associated with high density of structural defects or traps present in the film.

Reduction of shunt current in buffer-free IrMn based spin-valve structures

Science.gov (United States)

Kocaman, B.; Akdoğan, N.

2018-06-01

The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6 nm in order to achieve the lowest shunt current and high blocking temperature (>300 K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.

Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

Science.gov (United States)

Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

2017-08-01

We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.