Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits

Science.gov (United States)

Schmidgall, Emma R.; Chakravarthi, Srivatsa; Gould, Michael; Christen, Ian R.; Hestroffer, Karine; Hatami, Fariba; Fu, Kai-Mei C.

2018-02-01

Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.

Mid-infrared integrated photonics on silicon: a perspective

Directory of Open Access Journals (Sweden)

Lin Hongtao

2017-12-01

Full Text Available The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

Transfer Printed Nanomembranes for Heterogeneously Integrated Membrane Photonics

Directory of Open Access Journals (Sweden)

Hongjun Yang

2015-11-01

Full Text Available Heterogeneous crystalline semiconductor nanomembrane (NM integration is investigated for single-layer and double-layer Silicon (Si NM photonics, III-V/Si NM lasers, and graphene/Si NM total absorption devices. Both homogeneous and heterogeneous integration are realized by the versatile transfer printing technique. The performance of these integrated membrane devices shows, not only intact optical and electrical characteristics as their bulk counterparts, but also the unique light and matter interactions, such as Fano resonance, slow light, and critical coupling in photonic crystal cavities. Such a heterogeneous integration approach offers tremendous practical application potentials on unconventional, Si CMOS compatible, and high performance optoelectronic systems.

Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects

Science.gov (United States)

Alt, Shannon

2016-01-01

Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.

Photonic Crystals Towards Nanoscale Photonic Devices

CERN Document Server

Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexei; Pagnoux, Dominique

2008-01-01

Just like the periodical crystalline potential in solid state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as cages for storing, filtering or guiding light at the wavelength scale paves the way to the realization of optical and optoelectronic devices with ultimate properties and dimensions. This will contribute towards meeting the demands for greater miniaturization imposed by the processing of an ever increasing number of data. Photonic Crystals will provide students and researchers from different fields with the theoretical background required for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, ranging from optics to microwaves, where photonic crystals have found application. As such, it aims at building bridges between...

Photonic Crystals Towards Nanoscale Photonic Devices

CERN Document Server

Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexis

2005-01-01

Just like the periodical crystalline potential in solid-state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as a cage for storing, filtering or guiding light at the wavelength scale thus paves the way to the realisation of optical and optoelectronic devices with ultimate properties and dimensions. This should contribute toward meeting the demands for a greater miniaturisation that the processing of an ever increasing number of data requires. Photonic Crystals intends at providing students and researchers from different fields with the theoretical background needed for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, from optics to microwaves, where photonic crystals have found applications. As such, it aims at building brid...

Organic membrane photonic integrated circuits (OMPICs).

Science.gov (United States)

Amemiya, Tomohiro; Kanazawa, Toru; Hiratani, Takuo; Inoue, Daisuke; Gu, Zhichen; Yamasaki, Satoshi; Urakami, Tatsuhiro; Arai, Shigehisa

2017-08-07

We propose the concept of organic membrane photonic integrated circuits (OMPICs), which incorporate various functions needed for optical signal processing into a flexible organic membrane. We describe the structure of several devices used within the proposed OMPICs (e.g., transmission lines, I/O couplers, phase shifters, photodetectors, modulators), and theoretically investigate their characteristics. We then present a method of fabricating the photonic devices monolithically in an organic membrane and demonstrate the operation of transmission lines and I/O couplers, the most basic elements of OMPICs.

Quantum photonics hybrid integration platform

Energy Technology Data Exchange (ETDEWEB)

Murray, E.; Floether, F. F. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ellis, D. J. P.; Meany, T.; Bennett, A. J., E-mail: anthony.bennet@crl.toshiba.co.uk; Shields, A. J. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Lee, J. P. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Engineering Department, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Griffiths, J. P.; Jones, G. A. C.; Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

2015-10-26

Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single-photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to a SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO{sub 2} cladding. A tuneable Mach Zehnder interferometer (MZI) modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single-photon nature of the emission was verified using the on-chip MZI as a beamsplitter in a Hanbury Brown and Twiss measurement.

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Photonic crystal ring resonator based optical filters for photonic integrated circuits

International Nuclear Information System (INIS)

Robinson, S.

2014-01-01

In this paper, a two Dimensional (2D) Photonic Crystal Ring Resonator (PCRR) based optical Filters namely Add Drop Filter, Bandpass Filter, and Bandstop Filter are designed for Photonic Integrated Circuits (PICs). The normalized output response of the filters is obtained using 2D Finite Difference Time Domain (FDTD) method and the band diagram of periodic and non-periodic structure is attained by Plane Wave Expansion (PWE) method. The size of the device is minimized from a scale of few tens of millimeters to the order of micrometers. The overall size of the filters is around 11.4 μm × 11.4 μm which is highly suitable of photonic integrated circuits

Disposable photonic integrated circuits for evanescent wave sensors by ultra-high volume roll-to-roll method.

Science.gov (United States)

Aikio, Sanna; Hiltunen, Jussi; Hiitola-Keinänen, Johanna; Hiltunen, Marianne; Kontturi, Ville; Siitonen, Samuli; Puustinen, Jarkko; Karioja, Pentti

2016-02-08

Flexible photonic integrated circuit technology is an emerging field expanding the usage possibilities of photonics, particularly in sensor applications, by enabling the realization of conformable devices and introduction of new alternative production methods. Here, we demonstrate that disposable polymeric photonic integrated circuit devices can be produced in lengths of hundreds of meters by ultra-high volume roll-to-roll methods on a flexible carrier. Attenuation properties of hundreds of individual devices were measured confirming that waveguides with good and repeatable performance were fabricated. We also demonstrate the applicability of the devices for the evanescent wave sensing of ambient refractive index. The production of integrated photonic devices using ultra-high volume fabrication, in a similar manner as paper is produced, may inherently expand methods of manufacturing low-cost disposable photonic integrated circuits for a wide range of sensor applications.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

Science.gov (United States)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon.

Science.gov (United States)

Tokel, Onur; Turnali, Ahmet; Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F Ömer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e. , " in-chip" microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.

Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

International Nuclear Information System (INIS)

Ma, Jingwen; Sun, Xiankai; Xi, Xiang; Yu, Zejie

2016-01-01

Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

System-level integration of active silicon photonic biosensors

Science.gov (United States)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

Integrated Photonic Devices Incorporating Low-Loss Fluorinated Polymer Materials

Directory of Open Access Journals (Sweden)

Hyung-Jong Lee

2011-06-01

Full Text Available Low-loss polymer materials incorporating fluorinated compounds have been utilized for the investigation of various functional optical devices useful for optical communication and optical sensor systems. Since reliability issues concerning the polymer device have been resolved, polymeric waveguide devices have been gradually adopted for commercial application systems. The two most successfully commercialized polymeric integrated optic devices, variable optical attenuators and digital optical switches, are reviewed in this paper. Utilizing unique properties of optical polymers which are not available in other optical materials, novel polymeric optical devices are proposed including widely tunable external cavity lasers and integrated optical current sensors.

Integration of a photonic crystal polarization beam splitter and waveguide bend.

Science.gov (United States)

Zheng, Wanhua; Xing, Mingxin; Ren, Gang; Johnson, Steven G; Zhou, Wenjun; Chen, Wei; Chen, Lianghui

2009-05-11

In this work, we present the design of an integrated photonic-crystal polarization beam splitter (PC-PBS) and a low-loss photonic-crystal 60 degrees waveguide bend. Firstly, the modal properties of the PC-PBS and the mechanism of the low-loss waveguide bend are investigated by the two-dimensional finite-difference time-domain (FDTD) method, and then the integration of the two devices is studied. It shows that, although the individual devices perform well separately, the performance of the integrated circuit is poor due to the multi-mode property of the PC-PBS. By introducing deformed airhole structures, a single-mode PC-PBS is proposed, which significantly enhance the performance of the circuit with the extinction ratios remaining above 20 dB for both transverse-electric (TE) and transverse-magnetic (TM) polarizations. Both the specific result and the general idea of integration design are promising in the photonic crystal integrated circuits in the future.

Integrated reconfigurable photonic filters based on interferometric fractional Hilbert transforms.

Science.gov (United States)

Sima, C; Cai, B; Liu, B; Gao, Y; Yu, Y; Gates, J C; Zervas, M N; Smith, P G R; Liu, D

2017-10-01

In this paper, we present integrated reconfigurable photonic filters using fractional Hilbert transformers (FrHTs) and optical phase tuning structure within the silica-on-silicon platform. The proposed structure, including grating-based FrHTs, an X-coupler, and a pair of thermal tuning filaments, is fabricated through the direct UV grating writing technique. The thermal tuning effect is realized by the controllable microheaters located on the two arms of the X-coupler. We investigate the 200 GHz maximum bandwidth photonic FrHTs based on apodized planar Bragg gratings, and analyze the reflection spectrum responses. Through device integration and thermal modulation, the device could operate as photonic notch filters with 5 GHz linewidth and controllable single sideband suppression filters with measured 12 dB suppression ratio. A 50 GHz instantaneous frequency measuring system using this device is also schematically proposed and analyzed with potential 3 dB measurement improvement. The device could be configured with these multiple functions according to need. The reconfigurable structure has great potential in ultrafast all-optical signal processing fields.

Photonic Structure-Integrated Two-Dimensional Material Optoelectronics

Directory of Open Access Journals (Sweden)

Tianjiao Wang

2016-12-01

Full Text Available The rapid development and unique properties of two-dimensional (2D materials, such as graphene, phosphorene and transition metal dichalcogenides enable them to become intriguing candidates for future optoelectronic applications. To maximize the potential of 2D material-based optoelectronics, various photonic structures are integrated to form photonic structure/2D material hybrid systems so that the device performance can be manipulated in controllable ways. Here, we first introduce the photocurrent-generation mechanisms of 2D material-based optoelectronics and their performance. We then offer an overview and evaluation of the state-of-the-art of hybrid systems, where 2D material optoelectronics are integrated with photonic structures, especially plasmonic nanostructures, photonic waveguides and crystals. By combining with those photonic structures, the performance of 2D material optoelectronics can be further enhanced, and on the other side, a high-performance modulator can be achieved by electrostatically tuning 2D materials. Finally, 2D material-based photodetector can also become an efficient probe to learn the light-matter interactions of photonic structures. Those hybrid systems combine the advantages of 2D materials and photonic structures, providing further capacity for high-performance optoelectronics.

Tutorial: Integrated-photonic switching structures

Science.gov (United States)

Soref, Richard

2018-02-01

Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Directory of Open Access Journals (Sweden)

Sandro Rao

2016-01-01

Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Design of integral shutters for the beamlines at the Advanced Photon Source

International Nuclear Information System (INIS)

Chang, J.; Shu, D.; Nian, H.L.; Kuzay, T.M.; Job, P.K.

1994-01-01

An integral shutter is a device that integrates a white-beam stop, monochromatic-beam (mono-beam) shutters, a safety stop, and a collimator into one assembly to save space in the photon beamline. Various integral shutters have been developed as standard components for the beamlines at the Advanced Photon Source. The integral shutters are designed to be operated in white-beam mode or mono-beam mode. With regard to safety, each mode of operation is secured by locking certain devices in their up or down positions. Some of the components of the integral shutters share designs similar to the front-end shutters or fixed masks. Design details of the integral shutters are presented

Athermal Photonic Devices and Circuits on a Silicon Platform

Science.gov (United States)

Raghunathan, Vivek

In recent years, silicon based optical interconnects has been pursued as an effective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and electronics has been enabled by silicon photonic devices that can be fabricated using CMOS technology. However, high levels of device integration result in significant local and global temperature fluctuations that prove problematic for silicon based photonic devices. In particular, high temperature dependence of Si refractive index (thermo-optic (TO) coefficient) shifts the filter response of resonant devices that limit wavelength resolution in various applications. Active thermal compensation using heaters and thermo-electric coolers are the legacy solution for low density integration. However, the required electrical power, device foot print and number of input/output (I/O) lines limit the integration density. We present a passive approach to an athermal design that involves compensation of positive TO effects from a silicon core by negative TO effects of the polymer cladding. In addition, the design rule involves engineering the waveguide core geometry depending on the resonance wavelength under consideration to ensure desired amount of light in the polymer. We develop exact design requirements for a TO peak stability of 0 pm/K and present prototype performance of 0.5 pm/K. We explore the material design space through initiated chemical vapor deposition (iCVD) of 2 polymer cladding choices. We study the effect of cross-linking on the optical properties of a polymer and establish the superior performance of the co-polymer cladding compared to the homo-polymer. Integration of polymer clad devices in an electronic-photonic architecture requires the possibility of multi-layer stacking capability. We use a low temperature, high density plasma chemical vapor deposition of SiO2/SiN x to hermetically seal the athermal. Further, we employ visible light for

Liquid Crystal photonic Bandgap Fiber Devices

DEFF Research Database (Denmark)

Wei, Lei

In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure. The prese......In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure...... of each LCPBG fiber. Finally, the applications for LCPBG fiber devices based on the on-chip platform design have been demonstrated in realizing microwave true-time delay and creating an electrically tunable fiber laser. Referatet mailes...

Fast broad-band photon detector based on quantum well devices and charge-integrating electronics for non-invasive FEL monitoring

Energy Technology Data Exchange (ETDEWEB)

Antonelli, M., E-mail: matias.antonelli@elettra.eu; Cautero, G.; Sergo, R.; Castellaro, C.; Menk, R. H. [Elettra – Sincrotrone Trieste S.C.p.A., Trieste (Italy); Ganbold, T. [School in Nanotechnology, University of Trieste, Trieste (Italy); IOM CNR, Laboratorio TASC, Trieste (Italy); Biasiol, G. [IOM CNR, Laboratorio TASC, Trieste (Italy)

2016-07-27

The recent evolution of free-electron lasers has not been matched by the development of adequate beam-monitoring instrumentation. However, for both experimental and diagnostics purposes, it is crucial to keep such photon beams under control, avoiding at the same time the absorption of the beam and the possible destruction of the detector. These requirements can be fulfilled by utilizing fast and non-invasive photon detectors operated in situ, upstream from the experimental station. From this perspective, sensors based on Quantum Well (QW) devices can be the key to detecting ultra-short light pulses. In fact, owing to their high electron mobility, InGaAs/InAlAs QW devices operated at room temperature exhibit sub-nanosecond response times. Their direct, low-energy band gap renders them capable of detecting photons ranging from visible to X-ray. Furthermore, the 2D electron gas forming inside the QW is responsible for a charge amplification mechanism, which increases the charge collection efficiency of these devices. In order to acquire the signals produced by these QW sensors, a novel readout electronics has been developed. It is based on a high-speed charge integrator, which allows short, low-intensity current pulses to be read within a 50-ns window. The integrated signal is acquired through an ADC and the entire process can be performed at a 10-MHz repetition rate. This work provides a detailed description of the development of the QW detectors and the acquisition electronics, as well as reporting the main experimental results, which show how these tools are well suited for the realization of fast, broad-band beam monitors.

Infrared detection and photon energy up-conversion in graphene layer infrared photodetectors integrated with LEDs based on van der Waals heterostructures: Concept, device model, and characteristics

Science.gov (United States)

Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Karasik, V. E.; Shur, M. S.

2017-09-01

We propose the concept of the infrared detection and photon energy up-conversion in the devices using the integration of the graphene layer infrared detectors (GLIPs) and the light emitting diodes (LEDs) based on van der Waals (vdW) heterostructures. Using the developed device model of the GLIP-LEDs, we calculate their characteristics. The GLIP-LED devices can operate as the detectors of far- and mid infrared radiation (FIR and MIR) with an electrical output or with near-infrared radiation (NIR) or visible radiation (VIR) output. In the latter case, GLIP-LED devices function as the photon energy up-converters of FIR and MIR to NIR or VIR. The operation of GLIP-LED devices is associated with the injection of the electron photocurrent produced due to the interband absorption of the FIR/MIR photons in the GLIP part into the LED emitting NIR/VIR photons. We calculate the GLIP-LED responsivity and up-conversion efficiency as functions the structure parameters and the energies of the incident FIR/MIR photons and the output NIR/VIR photons. The advantages of the GLs in the vdW heterostructures (relatively high photoexcitation rate from and low capture efficiency into GLs) combined with the reabsorption of a fraction of the NIR/FIR photon flux in the GLIP (which can enable an effective photonic feedback) result in the elevated GLIP-LED device responsivity and up-conversion efficiency. The positive optical feedback from the LED section of the device lead to increasing current injection enabling the appearance of the S-type current-voltage characteristic with a greatly enhanced responsivity near the switching point and current filamentation.

Photonic devices prepared by embossing in PDMS

Energy Technology Data Exchange (ETDEWEB)

Jandura, D., E-mail: jandura@fyzika.uniza.sk; Pudis, D.; Berezina, S.

2017-02-15

Highlights: • Fabrication technology of photonic devices based on embossing in PDMS is presented. • Analysis of morphological properties of prepared devices in PDMS by CLSM and AFM. • Spectral characterization of PDMS ring resonator proved the resonator functionality. - Abstract: In this paper, we present useful technique for fabrication of novel photonic devices created in the polydimethylsiloxane (PDMS). We use combination of direct laser writing in thin photoresist layer with embossing process of liquid PDMS. We prepared ring resonator and Mach-Zehnder interferometer in PDMS. The shape of prepared PDMS photonic devices was analyzed by confocal laser microscope and atomic force microscope. Optical characterization of these devices reveals extinction ratios of up to 20 dB.

Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

CERN Document Server

Ohtsu, Motoichi

2016-01-01

This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

A Microwave Photonic Interference Canceller: Architectures, Systems, and Integration

Science.gov (United States)

Chang, Matthew P.

This thesis is a comprehensive portfolio of work on a Microwave Photonic Self-Interference Canceller (MPC), a specialized optical system designed to eliminate interference from radio-frequency (RF) receivers. The novelty and value of the microwave photonic system lies in its ability to operate over bandwidths and frequencies that are orders of magnitude larger than what is possible using existing RF technology. The work begins, in 2012, with a discrete fiber-optic microwave photonic canceller, which prior work had demonstrated as a proof-of-concept, and culminates, in 2017, with the first ever monolithically integrated microwave photonic canceller. With an eye towards practical implementation, the thesis establishes novelty through three major project thrusts. (Fig. 1): (1) Extensive RF and system analysis to develop a full understanding of how, and through what mechanisms, MPCs affect an RF receiver. The first investigations of how a microwave photonic canceller performs in an actual wireless environment and a digital radio are also presented. (2) New architectures to improve the performance and functionality of MPCs, based on the analysis performed in Thrust 1. A novel balanced microwave photonic canceller architecture is developed and experimentally demonstrated. The balanced architecture shows significant improvements in link gain, noise figure, and dynamic range. Its main advantage is its ability to suppress common-mode noise and reduce noise figure by increasing the optical power. (3) Monolithic integration of the microwave photonic canceller into a photonic integrated circuit. This thrust presents the progression of integrating individual discrete devices into their semiconductor equivalent, as well as a full functional and RF analysis of the first ever integrated microwave photonic canceller.

On-chip synthesis of circularly polarized emission of light with integrated photonic circuits.

Science.gov (United States)

He, Li; Li, Mo

2014-05-01

The helicity of circularly polarized (CP) light plays an important role in the light-matter interaction in magnetic and quantum material systems. Exploiting CP light in integrated photonic circuits could lead to on-chip integration of novel optical helicity-dependent devices for applications ranging from spintronics to quantum optics. In this Letter, we demonstrate a silicon photonic circuit coupled with a 2D grating emitter operating at a telecom wavelength to synthesize vertically emitting, CP light from a quasi-TE waveguide mode. Handedness of the emitted circular polarized light can be thermally controlled with an integrated microheater. The compact device footprint enables a small beam diameter, which is desirable for large-scale integration.

Flexible manufacturing for photonics device assembly

International Nuclear Information System (INIS)

Lu, Shin-yee; Young, K.D.

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and optoelectronics (OE) multi-chip modules usually requires the placement of micron-size devices, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (pigtailing). This is a labor-intensive process. Studies done by the OE industry have shown that 95% of the cost of a pigtailed photonic device is attributed to the current practice of manual alignment and bonding techniques. At Lawrence Livermore National Laboratory, the authors are working to reduce the cost of packaging OE devices, through the use of automation

Flexible integration of free-standing nanowires into silicon photonics.

Science.gov (United States)

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

Integration of Single-Photon Sources and Detectors on GaAs

Directory of Open Access Journals (Sweden)

Giulia Enrica Digeronimo

2016-10-01

Full Text Available Quantum photonic integrated circuits (QPICs on a GaAs platform allow the generation, manipulation, routing, and detection of non-classical states of light, which could pave the way for quantum information processing based on photons. In this article, the prototype of a multi-functional QPIC is presented together with our recent achievements in terms of nanofabrication and integration of each component of the circuit. Photons are generated by excited InAs quantum dots (QDs and routed through ridge waveguides towards photonic crystal cavities acting as filters. The filters with a transmission of 20% and free spectral range ≥66 nm are able to select a single excitonic line out of the complex emission spectra of the QDs. The QD luminescence can be measured by on-chip superconducting single photon detectors made of niobium nitride (NbN nanowires patterned on top of a suspended nanobeam, reaching a device quantum efficiency up to 28%. Moreover, two electrically independent detectors are integrated on top of the same nanobeam, resulting in a very compact autocorrelator for on-chip g(2(τ measurements.

Hybrid integration of carbon nanotubes in silicon photonic structures

Science.gov (United States)

Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

2017-02-01

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

Increasing the density of passive photonic-integrated circuits via nanophotonic cloaking

Science.gov (United States)

Shen, Bing; Polson, Randy; Menon, Rajesh

2016-11-01

Photonic-integrated devices need to be adequately spaced apart to prevent signal cross-talk. This fundamentally limits their packing density. Here we report the use of nanophotonic cloaking to render neighbouring devices invisible to one another, which allows them to be placed closer together than is otherwise feasible. Specifically, we experimentally demonstrated waveguides that are spaced by a distance of ~λ0/2 and designed waveguides with centre-to-centre spacing as small as 600 nm (-2 dB and an extinction ratio >15 dB over a bandwidth larger than 60 nm. This performance can be improved with better design algorithms and industry-standard lithography. The nanophotonic cloak relies on multiple guided-mode resonances, which render such devices very robust to fabrication errors. Our devices are broadly complimentary-metal-oxide-semiconductor compatible, have a minimum pitch of 200 nm and can be fabricated with a single lithography step. The nanophotonic cloaks can be generally applied to all passive integrated photonics.

Increasing the density of passive photonic-integrated circuits via nanophotonic cloaking.

Science.gov (United States)

Shen, Bing; Polson, Randy; Menon, Rajesh

2016-11-09

Photonic-integrated devices need to be adequately spaced apart to prevent signal cross-talk. This fundamentally limits their packing density. Here we report the use of nanophotonic cloaking to render neighbouring devices invisible to one another, which allows them to be placed closer together than is otherwise feasible. Specifically, we experimentally demonstrated waveguides that are spaced by a distance of ∼λ 0 /2 and designed waveguides with centre-to-centre spacing as small as 600 nm (-2 dB and an extinction ratio >15 dB over a bandwidth larger than 60 nm. This performance can be improved with better design algorithms and industry-standard lithography. The nanophotonic cloak relies on multiple guided-mode resonances, which render such devices very robust to fabrication errors. Our devices are broadly complimentary-metal-oxide-semiconductor compatible, have a minimum pitch of 200 nm and can be fabricated with a single lithography step. The nanophotonic cloaks can be generally applied to all passive integrated photonics.

Quantum dash based single section mode locked lasers for photonic integrated circuits.

Science.gov (United States)

Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

2014-05-05

We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

InP-based three-dimensional photonic integrated circuits

Science.gov (United States)

Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure

Finite element modeling of micromachined MEMS photon devices

Science.gov (United States)

Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

1999-09-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

Finite Element Modeling of Micromachined MEMS Photon Devices

International Nuclear Information System (INIS)

Datskos, P.G.; Evans, B.M.; Schonberger, D.

1999-01-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

International Nuclear Information System (INIS)

Schulze, J.; Oehme, M.; Werner, J.

2012-01-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

Energy Technology Data Exchange (ETDEWEB)

Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

2012-02-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

GaN-based integrated photonics chip with suspended LED and waveguide

Science.gov (United States)

Li, Xin; Wang, Yongjin; Hane, Kazuhiro; Shi, Zheng; Yan, Jiang

2018-05-01

We propose a GaN-based integrated photonics chip with suspended LED and straight waveguide with different geometric parameters. The integrated photonics chip is prepared by double-side process. Light transmission performance of the integrated chip verse current is quantitatively analyzed by capturing light transmitted to waveguide tip and BPM (beam propagation method) simulation. Reduction of the waveguide width from 8 μm to 4 μm results in an over linear reduction of the light output power while a doubling of the length from 250 μm to 500 μm only results in under linear decrease of the output power. Free-space data transmission with 80 Mbps random binary sequence of the integrated chip is capable of achieving high speed data transmission via visible light. This study provides a potential approach for GaN-based integrated photonics chip as micro light source and passive optical device in VLC (visible light communication).

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

Science.gov (United States)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

Quantum communications system with integrated photonic devices

Science.gov (United States)

Nordholt, Jane E.; Peterson, Charles Glen; Newell, Raymond Thorson; Hughes, Richard John

2017-11-14

Security is increased in quantum communication (QC) systems lacking a true single-photon laser source by encoding a transmitted optical signal with two or more decoy-states. A variable attenuator or amplitude modulator randomly imposes average photon values onto the optical signal based on data input and the predetermined decoy-states. By measuring and comparing photon distributions for a received QC signal, a single-photon transmittance is estimated. Fiber birefringence is compensated by applying polarization modulation. A transmitter can be configured to transmit in conjugate polarization bases whose states of polarization (SOPs) can be represented as equidistant points on a great circle on the Poincare sphere so that the received SOPs are mapped to equidistant points on a great circle and routed to corresponding detectors. Transmitters are implemented in quantum communication cards and can be assembled from micro-optical components, or transmitter components can be fabricated as part of a monolithic or hybrid chip-scale circuit.

Engineering integrated photonics for heralded quantum gates

Science.gov (United States)

Meany, Thomas; Biggerstaff, Devon N.; Broome, Matthew A.; Fedrizzi, Alessandro; Delanty, Michael; Steel, M. J.; Gilchrist, Alexei; Marshall, Graham D.; White, Andrew G.; Withford, Michael J.

2016-06-01

Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

Engineering integrated photonics for heralded quantum gates.

Science.gov (United States)

Meany, Thomas; Biggerstaff, Devon N; Broome, Matthew A; Fedrizzi, Alessandro; Delanty, Michael; Steel, M J; Gilchrist, Alexei; Marshall, Graham D; White, Andrew G; Withford, Michael J

2016-06-10

Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

Room-temperature-deposited dielectrics and superconductors for integrated photonics.

Science.gov (United States)

Shainline, Jeffrey M; Buckley, Sonia M; Nader, Nima; Gentry, Cale M; Cossel, Kevin C; Cleary, Justin W; Popović, Miloš; Newbury, Nathan R; Nam, Sae Woo; Mirin, Richard P

2017-05-01

We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating low cost and high scalability. We have shown low-loss SiN waveguides, high-Q ring resonators, critically coupled ring resonators, 50/50 beam splitters, Mach-Zehnder interferometers (MZIs) and a process-agnostic fiber packaging scheme. We have further explored the utility of this process for applications in nonlinear optics and quantum photonics. We demonstrate spectral tailoring and octave-spanning supercontinuum generation as well as the integration of superconducting nanowire single photon detectors with MZIs and channel-dropping filters. The packaging approach is suitable for operation up to 160 °C as well as below 1 K. The process is well suited for augmentation of existing foundry capabilities or as a stand-alone process.

Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

Science.gov (United States)

Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

2014-07-22

Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

Multichannel photonic Hilbert transformers based on complex modulated integrated Bragg gratings.

Science.gov (United States)

Cheng, Rui; Chrostowski, Lukas

2018-03-01

Multichannel photonic Hilbert transformers (MPHTs) are reported. The devices are based on single compact spiral integrated Bragg gratings on silicon with coupling coefficients precisely modulated by the phase of each grating period. MPHTs with up to nine wavelength channels and a single-channel bandwidth of up to ∼625  GHz are achieved. The potential of the devices for multichannel single-sideband signal generation is suggested. The work offers a new possibility of utilizing wavelength as an extra degree of freedom in designing radio-frequency photonic signal processors. Such multichannel processors are expected to possess improved capacities and a potential to greatly benefit current widespread wavelength division multiplexed systems.

Integrated Microwave Photonics

OpenAIRE

Marpaung, David; Roeloffzen, Chris; Heideman, René; Leinse, Arne; Sales Maicas, Salvador; Capmany Francoy, José

2013-01-01

Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A particular aspect that recently gains significant interests is the use of photonic integrated circuit (PIC) technology in the MWP field for enhanced functionalities and robustness as well as the r...

Even nanomechanical modes transduced by integrated photonics

Energy Technology Data Exchange (ETDEWEB)

Westwood-Bachman, J. N.; Diao, Z.; Sauer, V. T. K.; Hiebert, W. K., E-mail: wayne.hiebert@nrc-cnrc.gc.ca [Department of Physics, University of Alberta, Edmonton T6G 2E1 (Canada); National Institute for Nanotechnology, 11421 Saskatchewan Drive, Edmonton T6G 2M9 (Canada); Bachman, D. [Department of Electrical Engineering, University of Alberta, Edmonton T6G 2V4 (Canada)

2016-02-08

We demonstrate the actuation and detection of even flexural vibrational modes of a doubly clamped nanomechanical resonator using an integrated photonics transduction scheme. The doubly clamped beam is formed by releasing a straight section of an optical racetrack resonator from the underlying silicon dioxide layer, and a step is fabricated in the substrate beneath the beam. The step causes uneven force and responsivity distribution along the device length, permitting excitation and detection of even modes of vibration. This is achieved while retaining transduction capability for odd modes. The devices are actuated via optical force applied with a pump laser. The displacement sensitivities of the first through third modes, as obtained from the thermomechanical noise floor, are 228 fm Hz{sup −1/2}, 153 fm Hz{sup −1/2}, and 112 fm Hz{sup −1/2}, respectively. The excitation efficiency for these modes is compared and modeled based on integration of the uneven forces over the mode shapes. While the excitation efficiency for the first three modes is approximately the same when the step occurs at about 38% of the beam length, the ability to tune the modal efficiency of transduction by choosing the step position is discussed. The overall optical force on each mode is approximately 0.4 pN μm{sup −1} mW{sup −1}, for an applied optical power of 0.07 mW. We show a potential application that uses the resonant frequencies of the first two vibrational modes of a buckled beam to measure the stress in the silicon device layer, estimated to be 106 MPa. We anticipate that the observation of the second mode of vibration using our integrated photonics approach will be useful in future mass sensing experiments.

Perspective: The future of quantum dot photonic integrated circuits

Directory of Open Access Journals (Sweden)

Justin C. Norman

2018-03-01

Full Text Available Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS foundries.

Perspective: The future of quantum dot photonic integrated circuits

Science.gov (United States)

Norman, Justin C.; Jung, Daehwan; Wan, Yating; Bowers, John E.

2018-03-01

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

Deeply-etched DBR mirrors for photonic integrated circuits and tunable lasers

NARCIS (Netherlands)

Docter, B.

2009-01-01

Deeply-etched Distributed Bragg Reflector (DBR) mirrors are a new versatile building block for Photonic Integrated Circuits that allows us to create more complex circuits for optical telecommunication applications. The DBR mirrors increase the device design flexibility because the mirrors can be

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

Science.gov (United States)

Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

2018-04-01

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Low dimension structures and devices for new generation photonic technology

International Nuclear Information System (INIS)

Zhang, D. H.; Tang, D. Y.; Chen, T. P.; Mei, T.; Yuan, X. C.

2014-01-01

Low dimensional structures and devices are the key technological building blocks for new generation of electronic and photonic technology. Such structures and devices show novel properties and can be integrated into systems for wide applications in many areas, including medical, biological and military and advancement of science. In this invited talk, I will present the main results achieved in our competitive research program which aims to explore the application of the mesoscopic structures in light source, manipulation and imaging and integrate them into advanced systems. In the light source aspect, we have for the first time developed graphene mode-locked lasers which are in the process of commercialization. Nanocrystal Si embedded in dielectrics was formed by ion implantation and subsequent annealing. Si light emitting devices with external quantum efficiency of about 2.9×10 −3 % for visible emission were demonstrated at room temperature and the color of emitted light can be tuned electrically from violet to white by varying the injected current. In light manipulation, loss compensation of surface plasmon polaritons (SPPs) using quantum well (QW) gain media was studied theoretically and demonstrated experimentally. The SPP propagation length was effectively elongated several times through electrical pumping. One and two microring resonators based on silicon on insulator and III-V semiconductors technologies have been successfully fabricated and they can be used as filter and switch in the photonic circuit. In imaging, both SPP and low dimension structures are investigated and resolution far beyond diffraction limit in visible range has been realized. The integration of the components in the three aspects into complicated systems is on the way

Flexible manufacturing for photonics device assembly

Science.gov (United States)

Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

Science.gov (United States)

Driscoll, Jeffrey B.

Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

Multifrequency sources of quantum correlated photon pairs on-chip: a path toward integrated Quantum Frequency Combs

Directory of Open Access Journals (Sweden)

Caspani Lucia

2016-06-01

Full Text Available Recent developments in quantum photonics have initiated the process of bringing photonic-quantumbased systems out-of-the-lab and into real-world applications. As an example, devices to enable the exchange of a cryptographic key secured by the laws of quantum mechanics are already commercially available. In order to further boost this process, the next step is to transfer the results achieved by means of bulky and expensive setups into miniaturized and affordable devices. Integrated quantum photonics is exactly addressing this issue. In this paper, we briefly review the most recent advancements in the generation of quantum states of light on-chip. In particular, we focus on optical microcavities, as they can offer a solution to the problem of low efficiency that is characteristic of the materials typically used in integrated platforms. In addition, we show that specifically designed microcavities can also offer further advantages, such as compatibility with telecom standards (for exploiting existing fibre networks and quantum memories (necessary to extend the communication distance, as well as giving a longitudinal multimode character for larger information transfer and processing. This last property (i.e., the increased dimensionality of the photon quantum state is achieved through the ability to generate multiple photon pairs on a frequency comb, corresponding to the microcavity resonances. Further achievements include the possibility of fully exploiting the polarization degree of freedom, even for integrated devices. These results pave the way for the generation of integrated quantum frequency combs that, in turn, may find important applications toward the realization of a compact quantum-computing platform.

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

International Nuclear Information System (INIS)

Wang, Yongjin; Zhu, Guixia; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo; Cai, Wei

2016-01-01

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

Science.gov (United States)

Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

2018-02-01

A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

Science.gov (United States)

Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

2015-02-01

We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

Multilayered photonic integration on SOI platform using waveguide-based bridge structure

Science.gov (United States)

Majumder, Saikat; Chakraborty, Rajib

2018-06-01

A waveguide based structure on silicon on insulator platform is proposed for vertical integration in photonic integrated circuits. The structure consists of two multimode interference couplers connected by a single mode (SM) section which can act as a bridge over any other underlying device. Two more SM sections acts as input and output of the first and second multimode couplers respectively. Potential application of this structure is in multilayered photonic links. It is shown that the efficiency of the structure can be improved by making some design modifications. The entire simulation is done using effective-index based matrix method. The feature size chosen are comparable to waveguides fabricated previously so as to fabricate the proposed structure easily.

A monolithic integrated photonic microwave filter

Science.gov (United States)

Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

2017-02-01

Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

High-performance silicon photonics technology for telecommunications applications.

Science.gov (United States)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

High-performance silicon photonics technology for telecommunications applications

International Nuclear Information System (INIS)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Yamamoto, Tsuyoshi; Ishikawa, Yasuhiko; Wada, Kazumi

2014-01-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. (review)

High-performance silicon photonics technology for telecommunications applications

Science.gov (United States)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

International Nuclear Information System (INIS)

Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

2015-01-01

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

Using Protection Layers for a 2-Photon Water Splitting Device

DEFF Research Database (Denmark)

Seger, Brian; Mei, Bastian Timo; Frydendal, Rasmus

2015-01-01

The 2-photon tandem device for photocatalytic water splitting has been theoretically shown to provide a higher efficiency than a single photon device(1). This increased efficiency can be achieved by having one material optimized to absorb high energy photons (large bandgap) and another material...... optimized to absorb low energy photons (small bandgap). To a large degree this approach has been hindered by corrosion issues. In this talk I will first discuss how our computational screening of 2,400 materials showed that very few materials can efficiently absorb light without corroding in water splitting...

Hybrid Photonic Integration on a Polymer Platform

Directory of Open Access Journals (Sweden)

Ziyang Zhang

2015-09-01

Full Text Available To fulfill the functionality demands from the fast developing optical networks, a hybrid integration approach allows for combining the advantages of various material platforms. We have established a polymer-based hybrid integration platform (polyboard, which provides flexible optical input/ouptut interfaces (I/Os that allow robust coupling of indium phosphide (InP-based active components, passive insertion of thin-film-based optical elements, and on-chip attachment of optical fibers. This work reviews the recent progress of our polyboard platform. On the fundamental level, multi-core waveguides and polymer/silicon nitride heterogeneous waveguides have been fabricated, broadening device design possibilities and enabling 3D photonic integration. Furthermore, 40-channel optical line terminals and compact, bi-directional optical network units have been developed as highly functional, low-cost devices for the wavelength division multiplexed passive optical network. On a larger scale, thermo-optic elements, thin-film elements and an InP gain chip have been integrated on the polyboard to realize a colorless, dual-polarization optical 90° hybrid as the frontend of a coherent receiver. For high-end applications, a wavelength tunable 100Gbaud transmitter module has been demonstrated, manifesting the joint contribution from the polyboard technology, high speed polymer electro-optic modulator, InP driver electronics and ceramic electronic interconnects.

An integrated processor for photonic quantum states using a broadband light–matter interface

International Nuclear Information System (INIS)

Saglamyurek, E; Sinclair, N; Slater, J A; Heshami, K; Oblak, D; Tittel, W

2014-01-01

Faithful storage and coherent manipulation of quantum optical pulses are key for long distance quantum communications and quantum computing. Combining these functions in a light–matter interface that can be integrated on-chip with other photonic quantum technologies, e.g. sources of entangled photons, is an important step towards these applications. To date there have only been a few demonstrations of coherent pulse manipulation utilizing optical storage devices compatible with quantum states, and that only in atomic gas media (making integration difficult) and with limited capabilities. Here we describe how a broadband waveguide quantum memory based on the atomic frequency comb (AFC) protocol can be used as a programmable processor for essentially arbitrary spectral and temporal manipulations of individual quantum optical pulses. Using weak coherent optical pulses at the few photon level, we experimentally demonstrate sequencing, time-to-frequency multiplexing and demultiplexing, splitting, interfering, temporal and spectral filtering, compressing and stretching as well as selective delaying. Our integrated light–matter interface offers high-rate, robust and easily configurable manipulation of quantum optical pulses and brings fully practical optical quantum devices one step closer to reality. Furthermore, as the AFC protocol is suitable for storage of intense light pulses, our processor may also find applications in classical communications. (paper)

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau

2016-01-01

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin

2016-09-06

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

Insertion devices at the advanced photon source

International Nuclear Information System (INIS)

Moog, E.R.

1996-01-01

The insertion devices being installed at the Advanced Photon Source cause the stored particle beam to wiggle, emitting x-rays with each wiggle. These x-rays combine to make an intense beam of radiation. Both wiggler and undulator types of insertion devices are being installed; the characteristics of the radiation produced by these two types of insertion devices are discussed, along with the reasons for those characteristics

Integrable microwave filter based on a photonic crystal delay line.

Science.gov (United States)

Sancho, Juan; Bourderionnet, Jerome; Lloret, Juan; Combrié, Sylvain; Gasulla, Ivana; Xavier, Stephane; Sales, Salvador; Colman, Pierre; Lehoucq, Gaelle; Dolfi, Daniel; Capmany, José; De Rossi, Alfredo

2012-01-01

The availability of a tunable delay line with a chip-size footprint is a crucial step towards the full implementation of integrated microwave photonic signal processors. Achieving a large and tunable group delay on a millimetre-sized chip is not trivial. Slow light concepts are an appropriate solution, if propagation losses are kept acceptable. Here we use a low-loss 1.5 mm-long photonic crystal waveguide to demonstrate both notch and band-pass microwave filters that can be tuned over the 0-50-GHz spectral band. The waveguide is capable of generating a controllable delay with limited signal attenuation (total insertion loss below 10 dB when the delay is below 70 ps) and degradation. Owing to the very small footprint of the delay line, a fully integrated device is feasible, also featuring more complex and elaborate filter functions.

Chemical and biological sensing applications of integrated photonics with an introduction to the American Institute for Manufacturing Integrated Photonics (AIM Photonics)

Science.gov (United States)

Bickford, Justin; Guicheteau, Jason

2016-05-01

Integrated photonics affords an opportunity to explore novel sensing and lab-on-a-chip concepts. It offers a route to high sensitivity, high selectivity, and low SWaP-C test systems that can be operated autonomously or by minimallytrained field personnel. We'll introduce the topic, discuss possible sensing modalities, and highlight the advantages and limitations of this technology. We'll also introduce the recent American Institute for Manufacturing Integrated Photonics (AIM Photonics), give an overview of its vision and capabilities, how to utilize its Electronic-Photonic Design Automation (EPDA) tools and its Multi-Project Wafer and Assembly (MPWA) services, how to engage in its road mapping efforts, and how to become a contributing member.

High Efficiency Optical MEMS by the Integration of Photonic Lattices with Surface MEMS

Energy Technology Data Exchange (ETDEWEB)

FLEMING, JAMES G.; LIN, SHAWN-YU; MANI, SEETHAMBAL S.; RODGERS, M. STEVEN; DAGEL, DARYL J.

2002-11-01

This report outlines our work on the integration of high efficiency photonic lattice structures with MEMS (MicroElectroMechanical Systems). The simplest of these structures were based on 1-D mirror structures. These were integrated into a variety of devices, movable mirrors, switchable cavities and finally into Bragg fiber structures which enable the control of light in at least 2 dimensions. Of these devices, the most complex were the Bragg fibers. Bragg fibers consist of hollow tubes in which light is guided in a low index media (air) and confined by surrounding Bragg mirror stacks. In this work, structures with internal diameters from 5 to 30 microns have been fabricated and much larger structures should also be possible. We have demonstrated the fabrication of these structures with short wavelength band edges ranging from 400 to 1600nm. There may be potential applications for such structures in the fields of integrated optics and BioMEMS. We have also looked at the possibility of waveguiding in 3 dimensions by integrating defects into 3-dimensional photonic lattice structures. Eventually it may be possible to tune such structures by mechanically modulating the defects.

Electrically Driven Photonic Crystal Nanocavity Devices

Science.gov (United States)

2012-01-01

material, here gallium arsenide and indium arsenide self- assembled quantum dots (QDs). QDs are preferred for the gain medium because they can have...blue points ) and 150 K (green points ). The black lines are linear fits to the above threshold output power of the lasers, which are used to find the...SHAMBAT et al.: ELECTRICALLY DRIVEN PHOTONIC CRYSTAL NANOCAVITY DEVICES 1707 Fig. 13. (a) Tilted SEM picture of a fabricated triple cavity device. The in

Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

Science.gov (United States)

Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

2017-02-08

We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

Advances on integrated microwave photonics

DEFF Research Database (Denmark)

Dong, Jianji; Liao, Shasha; Yan, Siqi

2017-01-01

Integrated microwave photonics has attracted a lot of attentions and makes significant improvement in last 10 years. We have proposed and demonstrated several schemes about microwave photonics including waveform generation, signal processing and energy-efficient micro-heaters. Our schemes are all...

Ultra-fast photon counting with a passive quenching silicon photomultiplier in the charge integration regime

Science.gov (United States)

Zhang, Guoqing; Lina, Liu

2018-02-01

An ultra-fast photon counting method is proposed based on the charge integration of output electrical pulses of passive quenching silicon photomultipliers (SiPMs). The results of the numerical analysis with actual parameters of SiPMs show that the maximum photon counting rate of a state-of-art passive quenching SiPM can reach ~THz levels which is much larger than that of the existing photon counting devices. The experimental procedure is proposed based on this method. This photon counting regime of SiPMs is promising in many fields such as large dynamic light power detection.

Laser and photonic systems design and integration

CERN Document Server

Nof, Shimon Y; Cheng, Gary J

2014-01-01

New, significant scientific discoveries in laser and photonic technologies, systems perspectives, and integrated design approaches can improve even further the impact in critical areas of challenge. Yet this knowledge is dispersed across several disciplines and research arenas. Laser and Photonic Systems: Design and Integration brings together a multidisciplinary group of experts to increase understanding of the ways in which systems perspectives may influence laser and photonic innovations and application integration.By bringing together chapters from leading scientists and technologists, ind

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Science.gov (United States)

Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

2018-03-01

III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

Surface wave photonic device based on porous silicon multilayers

International Nuclear Information System (INIS)

Guillermain, E.; Lysenko, V.; Benyattou, T.

2006-01-01

Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

Microfluidics and thin-film processes: a recipe for organic integrated photonics based on 3D microresonators

Science.gov (United States)

Huby, N.; Pluchon, D.; Belloul, M.; Moreac, A.; Coulon, N.; Gaviot, E.; Panizza, P.; B"che, B.

2010-02-01

We report on the design and realization of photonic integrated devices based on 3D organic microresonators. This has been achieved by combining microfluidics techniques and thin-film processes. The microfluidic device and the control of the flow rates of the continuous and dispersed phases allow the fabrication of organic microresonators with diameter ranging from 30 to 200 μm. The resonance of the sphere in air has been first investigated by using the Raman spectroscopy set-up demonstrating the appropriate photonic properties. Then the microresonators have been integrated on an organic chip made of the photosensitive resin SU-8 and positioned at the extremity of a taper and alongside a rib waveguide. The realization of these structures by thin-film processes needs one step UV-lithography leading to 6μm width and 30μm height. Both devices have proved the efficient evanescent coupling leading to the excitation of the whispering gallery modes confined at the surface of the organic 3D microresonators. Finally, a band-stop filter has been used to detect the resonance spectra of the resonators once integrated.

On-chip, photon-number-resolving, telecommunication-band detectors for scalable photonic information processing

Energy Technology Data Exchange (ETDEWEB)

Gerrits, Thomas; Lita, Adriana E.; Calkins, Brice; Tomlin, Nathan A.; Fox, Anna E.; Linares, Antia Lamas; Mirin, Richard P.; Nam, Sae Woo [National Institute of Standards and Technology, Boulder, Colorado, 80305 (United States); Thomas-Peter, Nicholas; Metcalf, Benjamin J.; Spring, Justin B.; Langford, Nathan K.; Walmsley, Ian A. [Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Gates, James C.; Smith, Peter G. R. [Optoelectronics Research Centre, University of Southampton, Highfield SO17 1BJ (United Kingdom)

2011-12-15

Integration is currently the only feasible route toward scalable photonic quantum processing devices that are sufficiently complex to be genuinely useful in computing, metrology, and simulation. Embedded on-chip detection will be critical to such devices. We demonstrate an integrated photon-number-resolving detector, operating in the telecom band at 1550 nm, employing an evanescently coupled design that allows it to be placed at arbitrary locations within a planar circuit. Up to five photons are resolved in the guided optical mode via absorption from the evanescent field into a tungsten transition-edge sensor. The detection efficiency is 7.2{+-}0.5 %. The polarization sensitivity of the detector is also demonstrated. Detailed modeling of device designs shows a clear and feasible route to reaching high detection efficiencies.

System Engineering of Photonic Systems for Space Application

Science.gov (United States)

Watson, Michael D.; Pryor, Jonathan E.

2014-01-01

The application of photonics in space systems requires tight integration with the spacecraft systems to ensure accurate operation. This requires some detailed and specific system engineering to properly incorporate the photonics into the spacecraft architecture and to guide the spacecraft architecture in supporting the photonics devices. Recent research in product focused, elegant system engineering has led to a system approach which provides a robust approach to this integration. Focusing on the mission application and the integration of the spacecraft system physics incorporation of the photonics can be efficiently and effectively accomplished. This requires a clear understanding of the driving physics properties of the photonics device to ensure proper integration with no unintended consequences. The driving physics considerations in terms of optical performance will be identified for their use in system integration. Keywords: System Engineering, Optical Transfer Function, Optical Physics, Photonics, Image Jitter, Launch Vehicle, System Integration, Organizational Interaction

Data readout system utilizing photonic integrated circuit

Energy Technology Data Exchange (ETDEWEB)

Stopiński, S., E-mail: S.Stopinski@tue.nl [COBRA Research Institute, Eindhoven University of Technology (Netherlands); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology (Poland); Malinowski, M.; Piramidowicz, R. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology (Poland); Smit, M.K.; Leijtens, X.J.M. [COBRA Research Institute, Eindhoven University of Technology (Netherlands)

2013-10-11

We describe a novel optical solution for data readout systems. The core of the system is an Indium-Phosphide photonic integrated circuit performing as a front-end readout unit. It functions as an optical serializer in which the serialization of the input signal is provided by means of on-chip optical delay lines. The circuit employs electro-optic phase shifters to build amplitude modulators, power splitters for signal distribution, semiconductor optical amplifiers for signal amplification as well as on-chip reflectors. We present the concept of the system, the design and first characterization results of the devices that were fabricated in a multi-project wafer run.

Photonomics: automation approaches yield economic aikido for photonics device manufacture

Science.gov (United States)

Jordan, Scott

2002-09-01

In the glory days of photonics, with exponentiating demand for photonics devices came exponentiating competition, with new ventures commencing deliveries seemingly weekly. Suddenly the industry was faced with a commodity marketplace well before a commodity cost structure was in place. Economic issues like cost, scalability, yield-call it all "Photonomics" -now drive the industry. Automation and throughput-optimization are obvious answers, but until now, suitable modular tools had not been introduced. Available solutions were barely compatible with typical transverse alignment tolerances and could not automate angular alignments of collimated devices and arrays. And settling physics served as the insoluble bottleneck to throughput and resolution advancement in packaging, characterization and fabrication processes. The industry has addressed these needs in several ways, ranging from special configurations of catalog motion devices to integrated microrobots based on a novel mini-hexapod configuration. This intriguing approach allows tip/tilt alignments to be automated about any point in space, such as a beam waist, a focal point, the cleaved face of a fiber, or the optical axis of a waveguide- ideal for MEMS packaging automation and array alignment. Meanwhile, patented new low-cost settling-enhancement technology has been applied in applications ranging from air-bearing long-travel stages to subnanometer-resolution piezo positioners to advance resolution and process cycle-times in sensitive applications such as optical coupling characterization and fiber Bragg grating generation. Background, examples and metrics are discussed, providing an up-to-date industry overview of available solutions.

Towards THz integrated photonics

OpenAIRE

Hübers, Heinz-Wilhelm

2010-01-01

The demonstration of an integrated terahertz transceiver featuring a quantum cascade laser and a Schottky diode mixer promises new applications for compact and convenient terahertz photonic instrumentation.

Photonic devices based on black phosphorus and related hybrid materials

International Nuclear Information System (INIS)

Vitiello, M.S.; Viti, L.

2016-01-01

Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective means for the manipulation and control of carriers, from the visible to the far-infrared, leading to the development of highly efficient devices like sources, detectors and modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them, black phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be specifically engineered to comply with different applications, like transparent saturable absorbers, fast photocounductive switches and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black-phosphorus–based THz photonics and discuss future perspectives of this rapidly developing research field.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Semiconductor devices for entangled photon pair generation: a review

Science.gov (United States)

Orieux, Adeline; Versteegh, Marijn A. M.; Jöns, Klaus D.; Ducci, Sara

2017-07-01

Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.

Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

Directory of Open Access Journals (Sweden)

Adrian Iovan

2012-12-01

Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

Chemical sensors fabricated by a photonic integrated circuit foundry

Science.gov (United States)

Stievater, Todd H.; Koo, Kee; Tyndall, Nathan F.; Holmstrom, Scott A.; Kozak, Dmitry A.; Goetz, Peter G.; McGill, R. Andrew; Pruessner, Marcel W.

2018-02-01

We describe the detection of trace concentrations of chemical agents using waveguide-enhanced Raman spectroscopy in a photonic integrated circuit fabricated by AIM Photonics. The photonic integrated circuit is based on a five-centimeter long silicon nitride waveguide with a trench etched in the top cladding to allow access to the evanescent field of the propagating mode by analyte molecules. This waveguide transducer is coated with a sorbent polymer to enhance detection sensitivity and placed between low-loss edge couplers. The photonic integrated circuit is laid-out using the AIM Photonics Process Design Kit and fabricated on a Multi-Project Wafer. We detect chemical warfare agent simulants at sub parts-per-million levels in times of less than a minute. We also discuss anticipated improvements in the level of integration for photonic chemical sensors, as well as existing challenges.

Photonic integrated circuits: new challenges for lithography

Science.gov (United States)

Bolten, Jens; Wahlbrink, Thorsten; Prinzen, Andreas; Porschatis, Caroline; Lerch, Holger; Giesecke, Anna Lena

2016-10-01

In this work routes towards the fabrication of photonic integrated circuits (PICs) and the challenges their fabrication poses on lithography, such as large differences in feature dimension of adjacent device features, non-Manhattan-type features, high aspect ratios and significant topographic steps as well as tight lithographic requirements with respect to critical dimension control, line edge roughness and other key figures of merit not only for very small but also for relatively large features, are highlighted. Several ways those challenges are faced in today's low-volume fabrication of PICs, including the concept multi project wafer runs and mix and match approaches, are presented and possible paths towards a real market uptake of PICs are discussed.

Integrated Photonics Enabled by Slow Light

DEFF Research Database (Denmark)

Mørk, Jesper; Chen, Yuntian; Ek, Sara

2012-01-01

In this talk we will discuss the physics of slow light in semiconductor materials and in particular the possibilities offered for integrated photonics. This includes ultra-compact slow light enabled optical amplifiers, lasers and pulse sources.......In this talk we will discuss the physics of slow light in semiconductor materials and in particular the possibilities offered for integrated photonics. This includes ultra-compact slow light enabled optical amplifiers, lasers and pulse sources....

Few-photon Non-linearities in Nanophotonic Devices for Quantum Information Technology

DEFF Research Database (Denmark)

Nysteen, Anders

In this thesis we investigate few-photon non-linearities in all-optical, on-chip circuits, and we discuss their possible applications in devices of interest for quantum information technology, such as conditional two-photon gates and single-photon sources. In order to propose efficient devices...... the scattered photons. Even though the non-linearity also alters the pulse spectrum due to a four-wave mixing process, we demonstrate that input pulses with a Gaussian spectrum can be mapped to the output with up to 80 % fidelity. Using two identical two-level emitters, we propose a setup for a deterministic...... by the capturing process. Semiconductor quantum dots (QDs) are promising for realizing few-photon non-linearities in solid-state implementations, although coupling to phonon modes in the surrounding lattice have significant influence on the dynamics. By accounting for the commonly neglected asymmetry between...

Emerging heterogeneous integrated photonic platforms on silicon

Directory of Open Access Journals (Sweden)

Fathpour Sasan

2015-05-01

Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

Micro-/nanoscale multi-field coupling in nonlinear photonic devices

Science.gov (United States)

Yang, Qing; Wang, Yubo; Tang, Mingwei; Xu, Pengfei; Xu, Yingke; Liu, Xu

2017-08-01

The coupling of mechanics/electronics/photonics may improve the performance of nanophotonic devices not only in the linear region but also in the nonlinear region. This review letter mainly presents the recent advances on multi-field coupling in nonlinear photonic devices. The nonlinear piezoelectric effect and piezo-phototronic effects in quantum wells and fibers show that large second-order nonlinear susceptibilities can be achieved, and second harmonic generation and electro-optic modulation can be enhanced and modulated. Strain engineering can tune the lattice structures and induce second order susceptibilities in central symmetry semiconductors. By combining the absorption-based photoacoustic effect and intensity-dependent photobleaching effect, subdiffraction imaging can be achieved. This review will also discuss possible future applications of these novel effects and the perspective of their research. The review can help us develop a deeper knowledge of the substance of photon-electron-phonon interaction in a micro-/nano- system. Moreover, it can benefit the design of nonlinear optical sensors and imaging devices with a faster response rate, higher efficiency, more sensitivity and higher spatial resolution which could be applied in environmental detection, bio-sensors, medical imaging and so on.

Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

Science.gov (United States)

Gogurla, Narendar; Kundu, Subhas C.; Ray, Samit K.

2017-04-01

Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼105 as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.

Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths

Science.gov (United States)

Humer, M.; Guider, R.; Jantsch, W.; Fromherz, T.

2013-05-01

In the last decade, Si based photonics has made major advances in terms of design, fabrication, and device implementation. But due to Silicon's indirect bandgap, it still remains a challenge to create efficient Si-based light emitting devices. In order to overcome this problem, an approach is to develop hybrid systems integrating light-emitting materials into Si. A promising class of materials for this purpose is the class of semiconducting nanocrystal quantum dots (NCs) that are synthesized by colloidal chemistry. As their absorption and emission wavelength depends on the dot size, which can easily be controlled during synthesis, they are extremely attractive as building blocks for nanophotonic applications. For applications in telecom wavelength, Lead chalcogenide colloidal NCs are optimum materials due to their unique optical, electronic and nonlinear properties. In this work, we experimentally demonstrate the integration of PbS nanocrystals into Si-based photonic structures like slot waveguides and ring resonators as optically pumped emitters for room temperature applications. In order to create such hybrid structures, the NCs were dissolved into polymer resists and drop cast on top of the device. Upon optical pumping, intense photoluminescence emission from the resonating modes is recorded at the output of the waveguide with transmission quality factors up to 14000. The polymer host material was investigated with respect to its ability to stabilize the NC's photoluminescence emission against degradation under ambient conditions. The waveguide-ring coupling efficiency was also investigated as function of the NCs concentrations blended into the polymer matrix. The integration of colloidal quantum dots into Silicon photonic structures as demonstrated in this work is a very versatile technique and thus opens a large range of applications utilizing the linear and nonlinear optical properties of PbS NCs at telecom wavelengths.

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

Science.gov (United States)

Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

2012-04-09

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

Photonic integrated circuits : a new approach to laser technology

NARCIS (Netherlands)

Piramidowicz, R.; Stopinski, S.T.; Lawniczuk, K.; Welikow, K.; Szczepanski, P.; Leijtens, X.J.M.; Smit, M.K.

2012-01-01

In this work a brief review on photonic integrated circuits (PICs) is presented with a specific focus on integrated lasers and amplifiers. The work presents the history of development of the integration technology in photonics and its comparison to microelectronics. The major part of the review is

Plasmonic nanofocusing of light in an integrated silicon photonics platform.

Science.gov (United States)

Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

2011-07-04

The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

New Generation of Superconducting Nanowire Single-Photon Detectors

Directory of Open Access Journals (Sweden)

Goltsman G.N.

2015-01-01

Full Text Available We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

Science.gov (United States)

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

Plasmonic Waveguide-Integrated Nanowire Laser

DEFF Research Database (Denmark)

Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

2017-01-01

Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technolog......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...... technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic...

Switchable Photonic Crystals Using One-Dimensional Confined Liquid Crystals for Photonic Device Application.

Science.gov (United States)

Ryu, Seong Ho; Gim, Min-Jun; Lee, Wonsuk; Choi, Suk-Won; Yoon, Dong Ki

2017-01-25

Photonic crystals (PCs) have recently attracted considerable attention, with much effort devoted to photonic bandgap (PBG) control for varying the reflected color. Here, fabrication of a modulated one-dimensional (1D) anodic aluminum oxide (AAO) PC with a periodic porous structure is reported. The PBG of the fabricated PC can be reversibly changed by switching the ultraviolet (UV) light on/off. The AAO nanopores contain a mixture of photoresponsive liquid crystals (LCs) with irradiation-activated cis/trans photoisomerizable azobenzene. The resultant mixture of LCs in the porous AAO film exhibits a reversible PBG, depending on the cis/trans configuration of azobenzene molecules. The PBG switching is reliable over many cycles, suggesting that the fabricated device can be used in optical and photonic applications such as light modulators, smart windows, and sensors.

Integrated Visible Photonics for Trapped-Ion Quantum Computing

Science.gov (United States)

2017-06-10

etch to provide a smooth oxide facet, and clearance for fiber positioning for edge input coupling. Integrated Visible Photonics for Trapped-Ion...capability to optically address individual ions at several wavelengths. We demonstrate a dual-layered silicon nitride photonic platform for integration...coherence times, strong coulomb interactions, and optical addressability, hold great promise for implementation of practical quantum information

Multidimensional microstructured photonic device based on all-solid waveguide array fiber and magnetic fluid

Directory of Open Access Journals (Sweden)

Miao Yinping

2016-11-01

Full Text Available An all-solid waveguide array fiber (WAF is one kind of special microstructured optical fiber in which the higher-index rods are periodically distributed in a low-index silica host to form the transverse two-dimensional photonic crystal. In this paper, one kind of multidimensional microstructured optical fiber photonic device is proposed by using electric arc discharge method to fabricate periodic tapers along the fiber axis. By tuning the applied magnetic field intensity, the propagation characteristics of the all-solid WAF integrated with magnetic fluid are periodically modulated in both radial and axial directions. Experimental results show that the wavelength changes little while the transmission loss increases for an applied magnetic field intensity range from 0 to 500 Oe. The magnetic field sensitivity is 0.055 dB/Oe within the linear range from 50 to 300 Oe. Meanwhile, the all-solid WAF has very similar thermal expansion coefficient for both high- and low-refractive index glasses, and thermal drifts have a little effect on the mode profile. The results show that the temperature-induced transmission loss is <0.3 dB from 26°C to 44°C. Further tuning coherent coupling of waveguides and controlling light propagation, the all-solid WAF would be found great potential applications to develop new micro-nano photonic devices for optical communications and optical sensing applications.

Geometrical tuning art for entirely subwavelength grating waveguide based integrated photonics circuits.

Science.gov (United States)

Wang, Zheng; Xu, Xiaochuan; Fan, Donglei; Wang, Yaguo; Subbaraman, Harish; Chen, Ray T

2016-05-05

Subwavelength grating (SWG) waveguide is an intriguing alternative to conventional optical waveguides due to the extra degree of freedom it offers in tuning a few important waveguide properties, such as dispersion and refractive index. Devices based on SWG waveguides have demonstrated impressive performances compared to conventional waveguides. However, the high loss of SWG waveguide bends jeopardizes their applications in integrated photonic circuits. In this work, we propose a geometrical tuning art, which realizes a pre-distorted refractive index profile in SWG waveguide bends. The pre-distorted refractive index profile can effectively reduce the mode mismatch and radiation loss simultaneously, thus significantly reduce the bend loss. This geometry tuning art has been numerically optimized and experimentally demonstrated in present study. Through such tuning, the average insertion loss of a 5 μm SWG waveguide bend is reduced drastically from 5.43 dB to 1.10 dB per 90° bend for quasi-TE polarization. In the future, the proposed scheme will be utilized to enhance performance of a wide range of SWG waveguide based photonics devices.

Full control of far-field radiation via photonic integrated circuits decorated with plasmonic nanoantennas.

Science.gov (United States)

Sun, Yi-Zhi; Feng, Li-Shuang; Bachelot, Renaud; Blaize, Sylvain; Ding, Wei

2017-07-24

We theoretically develop a hybrid architecture consisting of photonic integrated circuit and plasmonic nanoantennas to fully control optical far-field radiation with unprecedented flexibility. By exploiting asymmetric and lateral excitation from silicon waveguides, single gold nanorod and cascaded nanorod pair can function as component radiation pixels, featured by full 2π phase coverage and nanoscale footprint. These radiation pixels allow us to design scalable on-chip devices in a wavefront engineering fashion. We numerically demonstrate beam collimation with 30° out of the incident plane and nearly diffraction limited divergence angle. We also present high-numerical-aperture (NA) beam focusing with NA ≈0.65 and vector beam generation (the radially-polarized mode) with the mode similarity greater than 44%. This concept and approach constitutes a designable optical platform, which might be a future bridge between integrated photonics and metasurface functionalities.

Spin coating and plasma process for 2.5D integrated photonics on multilayer polymers

International Nuclear Information System (INIS)

Zebda, A.; Camberlein, L.; Beche, B.; Gaviot, E.; Beche, E.; Duval, D.; Zyss, J.; Jezequel, G.; Solal, F.; Godet, C.

2008-01-01

Polymer spin coating, surface plasma treatment and selective UV-lithography processes have been developed to realize 2.5D photonic micro-resonators, made of disk- or ring-shaped upper rib waveguides, using common polymers such as SU8 (biphenol A ether glycidyl), PS233 (polymeric silane) and SOG (siloxane Spin on Glass). Both oxygen and argon plasma treatments, applied to PS233 and SOG before spin-coating the SU8, improve substantially the grip of multilayer devices (SU8 / PS233 or SU8 / SOG). Surface energy components derived from contact angle measurements have been used to optimize the processing conditions. In such integrated photonic devices, the both single-electromagnetic-modes called transverse electric (TE 00 ) and transverse magnetic (TM 00 ) have been excited in a SU8 micro-disk, with a single mode propagation strongly localized near the edge of the disk (i.e. the so called whispering gallery modes)

FY 2006 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Bernacki, Bruce E.; Ho, Nicolas; Krishnaswami, Kannan; Qiao, Hong (Amy); Schultz, John F.

2006-12-28

Research done by the Infrared Photonics team at Pacific Northwest National Laboratory (PNNL) is focused on developing miniaturized integrated optics and optical fiber processing methods for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin-film deposition capabilities, direct laser writing techniques, infrared photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology—all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to quantum cascade laser (QCL) transmitter miniaturization. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions.

Photonic integrated Mach-Zehnder interferometer with an on-chip reference arm for optical coherence tomography

Science.gov (United States)

Yurtsever, Günay; Považay, Boris; Alex, Aneesh; Zabihian, Behrooz; Drexler, Wolfgang; Baets, Roel

2014-01-01

Optical coherence tomography (OCT) is a noninvasive, three-dimensional imaging modality with several medical and industrial applications. Integrated photonics has the potential to enable mass production of OCT devices to significantly reduce size and cost, which can increase its use in established fields as well as enable new applications. Using silicon nitride (Si3N4) and silicon dioxide (SiO2) waveguides, we fabricated an integrated interferometer for spectrometer-based OCT. The integrated photonic circuit consists of four splitters and a 190 mm long reference arm with a foot-print of only 10 × 33 mm2. It is used as the core of a spectral domain OCT system consisting of a superluminescent diode centered at 1320 nm with 100 nm bandwidth, a spectrometer with 1024 channels, and an x-y scanner. The sensitivity of the system was measured at 0.25 mm depth to be 65 dB with 0.1 mW on the sample. Using the system, we imaged human skin in vivo. With further optimization in design and fabrication technology, Si3N4/SiO2 waveguides have a potential to serve as a platform for passive photonic integrated circuits for OCT. PMID:24761288

InP-based generic foundry platform for photonic integrated circuits

NARCIS (Netherlands)

Augustin, L.M.; Lemos Alvares Dos Santos, R.M.; den Haan, E.; Kleijn, S.E.F.; Thijs, P.J.A.; Latkowski, S.; Zhao, D.; Yao, W.; Bolk, J.; Ambrosius, H.P.M.M.; Mingaleev, S.; Richter, A.; Bakker, A.; Korthorst, T.

2017-01-01

The standardization of photonic integration processes for InP has led to versatile and easily accessible generic integration platforms. The generic integration platforms enable the realization of a broad range of applications and lead to a dramatic cost reduction in the development costs of photonic

Plasmonic Waveguide-Integrated Nanowire Laser

DEFF Research Database (Denmark)

Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

2017-01-01

technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...

Photonic Crystal Nanocavity Devices for Nonlinear Signal Processing

DEFF Research Database (Denmark)

Yu, Yi

, membranization of InP/InGaAs structure and wet etching. Experimental investigation of the switching dynamics of InP photonic crystal nanocavity structures are carried out using short-pulse homodyne pump-probe techniques, both in the linear and nonlinear region where the cavity is perturbed by a relatively small......This thesis deals with the investigation of InP material based photonic crystal cavity membrane structures, both experimentally and theoretically. The work emphasizes on the understanding of the physics underlying the structures’ nonlinear properties and their applications for all-optical signal...... processing. Based on the previous fabrication recipe developed in our III-V platform, several processing techniques are developed and optimized for the fabrication of InP photonic crystal membrane structures. Several key issues are identified to ensure a good device quality such as air hole size control...

Organic-inorganic hybrid material SUNCONNECT® for photonic integrated circuit

Science.gov (United States)

Nawata, Hideyuki; Oshima, Juro; Kashino, Tsubasa

2018-02-01

In this paper, we report the feature and properties about organic-inorganic hybrid material, "SUNCONNECT®" for photonic integrated circuit. "SUNCONNECT®" materials have low propagation loss at 1310nm (0.29dB/cm) and 1550nm (0.45dB/cm) respectively. In addition, the material has high thermal resistance both high temperature annealing test at 300°C and also 260°C solder heat resistance test. For actual device application, high reliability is required. 85°C /85% test was examined by using multi-mode waveguide. As a result, it indicated that variation of insertion loss property was not changed significantly after high temperature / high humidity test. For the application to photonic integrated circuit, it was demonstrated to fabricate polymer optical waveguide by using three different methods. Single-micron core pattern can be fabricated on cladding layer by using UV lithography with proximity gap exposure. Also, single-mode waveguide can be also fabricated with over cladding. On the other hands, "Mosquito method" and imprint method can be applied to fabricate polymer optical waveguide. Remarkably, these two methods can fabricate gradedindex type optical waveguide without using photo mask. In order to evaluate the optical performance, NFP's observation, measurement of insertion loss and propagation loss by cut-back methods were carried out by using each waveguide sample.

FY 2004 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Keller, Paul E.; Bennett, Wendy D.; Martin, Peter M.; Johnson, Bradley R.; Sundaram, S. K.; Riley, Brian J.; Martinez, James E.; Qiao, Hong (Amy); Schultz, John F.

2004-10-01

Research done by the Infrared Photonics team at PNNL is focused on developing miniaturized integrated optics for the MWIR and LWIR by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin film deposition capabilities, direct-laser writing techniques, IR photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology - all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to Quantum Cascade Laser (QCL) transmitter miniaturization. QCLs provide a viable infrared laser source for a new class of laser transmitters capable of meeting the performance requirements for a variety of national security sensing applications. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions.

Printed polymer photonic devices for optical interconnect systems

Science.gov (United States)

Subbaraman, Harish; Pan, Zeyu; Zhang, Cheng; Li, Qiaochu; Guo, L. J.; Chen, Ray T.

2016-03-01

Polymer photonic device fabrication usually relies on the utilization of clean-room processes, including photolithography, e-beam lithography, reactive ion etching (RIE) and lift-off methods etc, which are expensive and are limited to areas as large as a wafer. Utilizing a novel and a scalable printing process involving ink-jet printing and imprinting, we have fabricated polymer based photonic interconnect components, such as electro-optic polymer based modulators and ring resonator switches, and thermo-optic polymer switch based delay networks and demonstrated their operation. Specifically, a modulator operating at 15MHz and a 2-bit delay network providing up to 35.4ps are presented. In this paper, we also discuss the manufacturing challenges that need to be overcome in order to make roll-to-roll manufacturing practically viable. We discuss a few manufacturing challenges, such as inspection and quality control, registration, and web control, that need to be overcome in order to realize true implementation of roll-to-roll manufacturing of flexible polymer photonic systems. We have overcome these challenges, and currently utilizing our inhouse developed hardware and software tools, <10μm alignment accuracy at a 5m/min is demonstrated. Such a scalable roll-to-roll manufacturing scheme will enable the development of unique optoelectronic devices which can be used in a myriad of different applications, including communication, sensing, medicine, security, imaging, energy, lighting etc.

Integrated photon sources for quantum information science applications

Science.gov (United States)

Fanto, M. L.; Tison, C. C.; Steidle, J. A.; Lu, T.; Wang, Z.; Mogent, N. A.; Rizzo, A.; Thomas, P. M.; Preble, S. F.; Alsing, P. M.; Englund, D. R.

2017-10-01

Ring resonators are used as photon pair sources by taking advantage of the materials second or third order non- linearities through the processes of spontaneous parametric downconversion and spontaneous four wave mixing respectively. Two materials of interest for these applications are silicon for the infrared and aluminum nitride for the ultraviolet through the infrared. When fabricated into ring type sources they are capable of producing pairs of indistinguishable photons but typically suffer from an effective 50% loss. By slightly decoupling the input waveguide from the ring, the drop port coincidence ratio can be significantly increased with the trade-off being that the pump is less efficiently coupled into the ring. Ring resonators with this design have been demonstrated having coincidence ratios of 96% but requiring a factor of 10 increase in the pump power. Through the modification of the coupling design that relies on additional spectral dependence, it is possible to achieve similar coincidence ratios without the increased pumping requirement. This can be achieved by coupling the input waveguide to the ring multiple times, thus creating a Mach-Zehnder interferometer. This coupler design can be used on both sides of the ring resonator so that resonances supported by one of the couplers are suppressed by the other. This is the ideal configuration for a photon-pair source as it can only support the pump photons at the input side while only allowing the generated photons to leave through the output side. Recently, this device has been realized with preliminary results exhibiting the desired spectral dependence and with a coincidence ratio as high as 97% while allowing the pump to be nearly critically coupled to the ring. The demonstrated near unity coincidence ratio infers a near maximal heralding efficiency from the fabricated device. This device has the potential to greatly improve the scalability and performance of quantum computing and communication systems.

FY 2005 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Ho, Nicolas; Krishnaswami, Kannan; Johnson, Bradley R.; Sundaram, S. K.; Riley, Bradley M.; Martinez, James E.; Qiao, Hong (Amy); Schultz, John F.

2005-12-01

Research done by the Infrared Photonics team at Pacific Northwest National Laboratory (PNNL) is focused on developing miniaturized integrated optics for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin-film deposition capabilities, direct laser writing techniques, infrared photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology—all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to quantum cascade laser (QCL) transmitter miniaturization. QCLs provide a viable infrared laser source for a new class of laser transmitters capable of meeting the performance requirements for a variety of national security sensing applications. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions. During FY 2005, PNNL’s Infrared Photonics research team made measurable progress exploiting the extraordinary optical and material properties of chalcogenide glass to develop miniaturized integrated optics for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications. We investigated sulfur purification methods that will eventually lead to routine production of optical quality chalcogenide glass. We also discovered a glass degradation phenomenon and our investigation uncovered the underlying surface chemistry mechanism and developed mitigation actions. Key research was performed to understand and control the photomodification properties. This research was then used to demonstrate several essential infrared photonic devices, including LWIR single-mode waveguide devices and

Ge-Based Spin-Photodiodes for Room-Temperature Integrated Detection of Photon Helicity

KAUST Repository

Rinaldi, Christian

2012-05-02

Spin-photodiodes based on Fe/MgO/Ge(001) heterostructures are reported. These devices perform the room-temperature integrated electrical detection of the spin polarization of a photocurrent generated by circularly polarized photons with a wavelength of 1300 nm, for light pulses with intensity I 0 down to 200 μW. A forward and reverse-biased average photocurrent variation of 5.9% is measured for the complete reversal of the incident light helicity. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Progress in neuromorphic photonics

Science.gov (United States)

Ferreira de Lima, Thomas; Shastri, Bhavin J.; Tait, Alexander N.; Nahmias, Mitchell A.; Prucnal, Paul R.

2017-03-01

As society's appetite for information continues to grow, so does our need to process this information with increasing speed and versatility. Many believe that the one-size-fits-all solution of digital electronics is becoming a limiting factor in certain areas such as data links, cognitive radio, and ultrafast control. Analog photonic devices have found relatively simple signal processing niches where electronics can no longer provide sufficient speed and reconfigurability. Recently, the landscape for commercially manufacturable photonic chips has been changing rapidly and now promises to achieve economies of scale previously enjoyed solely by microelectronics. By bridging the mathematical prowess of artificial neural networks to the underlying physics of optoelectronic devices, neuromorphic photonics could breach new domains of information processing demanding significant complexity, low cost, and unmatched speed. In this article, we review the progress in neuromorphic photonics, focusing on photonic integrated devices. The challenges and design rules for optoelectronic instantiation of artificial neurons are presented. The proposed photonic architecture revolves around the processing network node composed of two parts: a nonlinear element and a network interface. We then survey excitable lasers in the recent literature as candidates for the nonlinear node and microring-resonator weight banks as the network interface. Finally, we compare metrics between neuromorphic electronics and neuromorphic photonics and discuss potential applications.

Integrated devices for quantum information and quantum simulation with polarization encoded qubits

Science.gov (United States)

Sansoni, Linda; Sciarrino, Fabio; Mataloni, Paolo; Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto

2012-06-01

The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. The technology for handling polarization-encoded qubits, the most commonly adopted approach, was still missing in quantum optical circuits until the ultrafast laser writing (ULW) technique was adopted for the first time to realize integrated devices able to support and manipulate polarization encoded qubits.1 Thanks to this method, polarization dependent and independent devices can be realized. In particular the maintenance of polarization entanglement was demonstrated in a balanced polarization independent integrated beam splitter1 and an integrated CNOT gate for polarization qubits was realized and carachterized.2 We also exploited integrated optics for quantum simulation tasks: by adopting the ULW technique an integrated quantum walk circuit was realized3 and, for the first time, we investigate how the particle statistics, either bosonic or fermionic, influences a two-particle discrete quantum walk. Such experiment has been realized by adopting two-photon entangled states and an array of integrated symmetric directional couplers. The polarization entanglement was exploited to simulate the bunching-antibunching feature of non interacting bosons and fermions. To this scope a novel three-dimensional geometry for the waveguide circuit is introduced, which allows accurate polarization independent behaviour, maintaining a remarkable control on both phase and balancement of the directional couplers.

Continuously tunable devices based on electrical control of dual-frequency liquid crystal filled photonic bandgap fibers

DEFF Research Database (Denmark)

Scolari, Lara; Alkeskjold, Thomas Tanggaard; Riishede, Jesper

2005-01-01

We present an electrically controlled photonic bandgap fiber device obtained by infiltrating the air holes of a photonic crystal fiber (PCF) with a dual-frequency liquid crystal (LC) with pre-tilted molecules. Compared to previously demonstrated devices of this kind, the main new feature of this ...... in the same device. We investigate the dynamics of this device and demonstrate a birefringence controller based on this principle....

Novel Plasmonic Materials and Nanodevices for Integrated Quantum Photonics

Science.gov (United States)

Shalaginov, Mikhail Y.

Light-matter interaction is the foundation for numerous important quantum optical phenomena, which may be harnessed to build practical devices with higher efficiency and unprecedented functionality. Nanoscale engineering is seen as a fruitful avenue to significantly strengthen light-matter interaction and also make quantum optical systems ultra-compact, scalable, and energy efficient. This research focuses on color centers in diamond that share quantum properties with single atoms. These systems promise a path for the realization of practical quantum devices such as nanoscale sensors, single-photon sources, and quantum memories. In particular, we explored an intriguing methodology of utilizing nanophotonic structures, such as hyperbolic metamaterials, nanoantennae, and plasmonic waveguides, to improve the color centers performance. We observed enhancement in the color center's spontaneous emission rate, emission directionality, and cooperativity over a broad optical frequency range. Additionally, we studied the effect of plasmonic environments on the spin-readout sensitivity of color centers. The use of CMOS-compatible epitaxially grown plasmonic materials in the design of these nanophotonic structures promises a new level of performance for a variety of integrated room-temperature quantum devices based on diamond color centers.

Integrated control rod monitoring device

International Nuclear Information System (INIS)

Saito, Katsuhiro

1997-01-01

The present invention provides a device in which an entire control rod driving time measuring device and a control rod position support device in a reactor building and a central control chamber are integrated systematically to save hardwares such as a signal input/output device and signal cables between boards. Namely, (1) functions of the entire control rod driving time measuring device for monitoring control rods which control the reactor power and a control rod position indication device are integrated into one identical system. Then, the entire devices can be made compact by the integration of the functions. (2) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated in a central operation board and a board in the site. Then, the place for the installation of them can be used in common in any of the cases. (3) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated to one identical system to save hardware to be used. Then, signal input/output devices and drift branching panel boards in the site and the central operation board can be saved, and cables for connecting both of the boards is no more necessary. (I.S.)

Photonic integrated circuits for millimeter-wave wireless communications

NARCIS (Netherlands)

Carpintero, G.; Balakier, K.; Yang, Z.; Guzmán, R.C.; Corradi, A.; Jimenez, A.; Kervalla, G.; Fice, M.; Lamponi, M.; Chtioui, M.; Van Dijk, Frédéric; Renaud, C.C.; Wonfor, A.; Bente, E.A.J.M.; Penty, R.V.; White, I.H.; Seeds, A.J.

2014-01-01

This paper describes the advantages that the introduction of photonic integration technologies can bring to the development of photonic-enabled wireless communications systems operating in the millimeter wave frequency range. We present two approaches for the development of dual wavelength sources

Chalcogenide glass-on-graphene photonics

Science.gov (United States)

Lin, Hongtao; Song, Yi; Huang, Yizhong; Kita, Derek; Deckoff-Jones, Skylar; Wang, Kaiqi; Li, Lan; Li, Junying; Zheng, Hanyu; Luo, Zhengqian; Wang, Haozhe; Novak, Spencer; Yadav, Anupama; Huang, Chung-Che; Shiue, Ren-Jye; Englund, Dirk; Gu, Tian; Hewak, Daniel; Richardson, Kathleen; Kong, Jing; Hu, Juejun

2017-12-01

Two-dimensional (2D) materials are of tremendous interest to integrated photonics, given their singular optical characteristics spanning light emission, modulation, saturable absorption and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. Here, we present a new route for 2D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material that can be directly deposited and patterned on a wide variety of 2D materials and can simultaneously function as the light-guiding medium, a gate dielectric and a passivation layer for 2D materials. Besides achieving improved fabrication yield and throughput compared with the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared waveguide-integrated photodetectors and modulators.

Integrated microwave photonics for phase modulated systems

NARCIS (Netherlands)

Marpaung, D.A.I.; Roeloffzen, C.G.H.

2012-01-01

For the last 25 years, microwave photonic (MWP) systems and links have relied almost exclusively on discrete optoelectronic devices, standard optical fibers and fiber-based components. With this concept, various functionalities like RF signal generation, distribution, processing and analysis have

Simulation of photons from plasmas for the applications to display devices

Science.gov (United States)

Lee, Hae June; Yoon, Hyun Jin; Lee, Jae Koo

2007-07-01

Numerical modeling of the photon transport of the ultraviolet (UV) and the visible lights are presented for plasma based display devices. The transport of UV lights which undergo resonance trapping by ground state atoms is solved by using the Holstein equation. After the UV lights are transformed to visible lights at the phosphor surfaces, the visible lights experience complicated traces inside the cell and finally are emitted toward the viewing window after having some power loss within the cell. A three-dimensional ray trace of the visible lights is calculated with a radiosity model. These simulations for the photons strengthen plasma discharge modeling for the application to display devices.

On-chip multi-wavelength laser sources fabricated using generic photonic integration technology

NARCIS (Netherlands)

Latkowski, S.; Williams, K.A.; Bente, E.A.J.M.

Generic photonic integration technology platforms allow for design and fabrication of large complexity application specific photonic integrated circuits. Monolithic active-passive integration on indium phosphide substrate naturally enables a reliable co-integration of optical gain elements and

Foldable and Cytocompatible Sol-gel TiO2 Photonics.

Science.gov (United States)

Li, Lan; Zhang, Ping; Wang, Wei-Ming; Lin, Hongtao; Zerdoum, Aidan B; Geiger, Sarah J; Liu, Yangchen; Xiao, Nicholas; Zou, Yi; Ogbuu, Okechukwu; Du, Qingyang; Jia, Xinqiao; Li, Jingjing; Hu, Juejun

2015-09-07

Integrated photonics provides a miniaturized and potentially implantable platform to manipulate and enhance the interactions between light and biological molecules or tissues in in-vitro and in-vivo settings, and is thus being increasingly adopted in a wide cross-section of biomedical applications ranging from disease diagnosis to optogenetic neuromodulation. However, the mechanical rigidity of substrates traditionally used for photonic integration is fundamentally incompatible with soft biological tissues. Cytotoxicity of materials and chemicals used in photonic device processing imposes another constraint towards these biophotonic applications. Here we present thin film TiO2 as a viable material for biocompatible and flexible integrated photonics. Amorphous TiO2 films were deposited using a low temperature (<250 °C) sol-gel process fully compatible with monolithic integration on plastic substrates. High-index-contrast flexible optical waveguides and resonators were fabricated using the sol-gel TiO2 material, and resonator quality factors up to 20,000 were measured. Following a multi-neutral-axis mechanical design, these devices exhibit remarkable mechanical flexibility, and can sustain repeated folding without compromising their optical performance. Finally, we validated the low cytotoxicity of the sol-gel TiO2 devices through in-vitro cell culture tests. These results demonstrate the potential of sol-gel TiO2 as a promising material platform for novel biophotonic devices.

Silicon Photonics II Components and Integration

CERN Document Server

Lockwood, David J

2011-01-01

This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

Directory of Open Access Journals (Sweden)

Daoxin Dai

2012-03-01

Full Text Available Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator, which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (demultiplexers, and high-extinction-ratio polarizers.

Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

Science.gov (United States)

Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

2016-09-19

Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

Ge-rich graded-index Si1-xGex devices for MID-IR integrated photonics

Science.gov (United States)

Ramirez, J. M.; Vakarin, V.; Liu, Q.; Frigerio, J.; Ballabio, A.; Le Roux, X.; Benedikovic, D.; Alonso-Ramos, C.; Isella, G.; Vivien, L.; Marris-Morini, D.

2018-02-01

Mid-infrared (mid-IR) silicon photonics is becoming a prominent research with remarkable potential in several applications such as in early medical diagnosis, safe communications, imaging, food safety and many more. In the quest for the best material platform to develop new photonic systems, Si and Ge depart with a notable advantage over other materials due to the high processing maturity accomplished during the last part of the 20th century through the deployment of the CMOS technology. From an optical viewpoint, combining Si with Ge to obtain SiGe alloys with controlled stoichiometry is also of interest for the photonic community since permits to increase the effective refractive index and the nonlinear parameter, providing a fascinating playground to exploit nonlinear effects. Furthermore, using Ge-rich SiGe gives access to a range of deep mid-IR wavelengths otherwise inaccessible (λ 2-20 μm). In this paper, we explore for the first time the limits of this approach by measuring the spectral loss characteristic over a broadband wavelength range spanning from λ = 5.5 μm to 8.5 μm. Three different SiGe waveguide platforms are compared, each one showing higher compactness than the preceding through the engineering of the vertical Ge profile, giving rise to different confinement characteristics to the propagating modes. A flat propagation loss characteristic of 2-3 dB/cm over the entire wavelength span is demonstrated in Ge-rich graded-index SiGe waveguides of only 6 μm thick. Also, the role of the overlap fraction of the confined optical mode with the Si-rich area at the bottom side of the epitaxial SiGe waveguide is put in perspective, revealing a lossy characteristic compared to the other designs were the optical mode is located in the Ge-rich area at the top of the waveguide uniquely. These Ge-rich graded-index SiGe waveguides may pave the way towards a new generation of photonic integrated circuits operating at deep mid-IR wavelengths.

Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

Science.gov (United States)

Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

2015-08-10

We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

Scalable electro-photonic integration concept based on polymer waveguides

Science.gov (United States)

Bosman, E.; Van Steenberge, G.; Boersma, A.; Wiegersma, S.; Harmsma, P.; Karppinen, M.; Korhonen, T.; Offrein, B. J.; Dangel, R.; Daly, A.; Ortsiefer, M.; Justice, J.; Corbett, B.; Dorrestein, S.; Duis, J.

2016-03-01

A novel method for fabricating a single mode optical interconnection platform is presented. The method comprises the miniaturized assembly of optoelectronic single dies, the scalable fabrication of polymer single mode waveguides and the coupling to glass fiber arrays providing the I/O's. The low cost approach for the polymer waveguide fabrication is based on the nano-imprinting of a spin-coated waveguide core layer. The assembly of VCSELs and photodiodes is performed before waveguide layers are applied. By embedding these components in deep reactive ion etched pockets in the silicon substrate, the planarity of the substrate for subsequent layer processing is guaranteed and the thermal path of chip-to-substrate is minimized. Optical coupling of the embedded devices to the nano-imprinted waveguides is performed by laser ablating 45 degree trenches which act as optical mirror for 90 degree deviation of the light from VCSEL to waveguide. Laser ablation is also implemented for removing parts of the polymer stack in order to mount a custom fabricated connector containing glass fiber arrays. A demonstration device was built to show the proof of principle of the novel fabrication, packaging and optical coupling principles as described above, combined with a set of sub-demonstrators showing the functionality of the different techniques separately. The paper represents a significant part of the electro-photonic integration accomplishments in the European 7th Framework project "Firefly" and not only discusses the development of the different assembly processes described above, but the efforts on the complete integration of all process approaches into the single device demonstrator.

Modelling band-to-band tunneling current in InP-based heterostructure photonic devices

NARCIS (Netherlands)

van Engelen, J.P.; Shen, L.; van der Tol, J.J.G.M.; Smit, M.K.; Kockaert, P.; Emplit, P.; Gorza, S.-P.; Massar, S.

2015-01-01

Some semiconductor photonic devices show large discontinuities in the band structure. Short tunnel paths caused by this band structure may lead to an excessive tunneling current, especially in highly doped layers. Modelling of this tunnelling current is therefore important when designing photonic

Efficient generation of single and entangled photons on a silicon photonic integrated chip

International Nuclear Information System (INIS)

Mower, Jacob; Englund, Dirk

2011-01-01

We present a protocol for generating on-demand, indistinguishable single photons on a silicon photonic integrated chip. The source is a time-multiplexed spontaneous parametric down-conversion element that allows optimization of single-photon versus multiphoton emission while realizing high output rate and indistinguishability. We minimize both the scaling of active elements and the scaling of active element loss with multiplexing. We then discuss detection strategies and data processing to further optimize the procedure. We simulate an improvement in single-photon-generation efficiency over previous time-multiplexing protocols, assuming existing fabrication capabilities. We then apply this system to generate heralded Bell states. The generation efficiency of both nonclassical states could be increased substantially with improved fabrication procedures.

Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

Science.gov (United States)

2018-01-08

engineer next-generation carbon-based optoelectronic and photonic devices with superior performance and capabilities. These devices include carbon...electronics; (4) nanostructured graphene plasmonics; and (5) polymer-nanotube conjugate chemistry . (1) Semiconducting carbon nanotube-based...applications (In Preparation, 2018). (5) Polymer-nanotube conjugate chemistry Conjugated polymers can be exploited as agents for selectively wrapping and

Electro-optic routing of photons from a single quantum dot in photonic integrated circuits

Science.gov (United States)

Midolo, Leonardo; Hansen, Sofie L.; Zhang, Weili; Papon, Camille; Schott, Rüdiger; Ludwig, Arne; Wieck, Andreas D.; Lodahl, Peter; Stobbe, Søren

2017-12-01

Recent breakthroughs in solid-state photonic quantum technologies enable generating and detecting single photons with near-unity efficiency as required for a range of photonic quantum technologies. The lack of methods to simultaneously generate and control photons within the same chip, however, has formed a main obstacle to achieving efficient multi-qubit gates and to harness the advantages of chip-scale quantum photonics. Here we propose and demonstrate an integrated voltage-controlled phase shifter based on the electro-optic effect in suspended photonic waveguides with embedded quantum emitters. The phase control allows building a compact Mach-Zehnder interferometer with two orthogonal arms, taking advantage of the anisotropic electro-optic response in gallium arsenide. Photons emitted by single self-assembled quantum dots can be actively routed into the two outputs of the interferometer. These results, together with the observed sub-microsecond response time, constitute a significant step towards chip-scale single-photon-source de-multiplexing, fiber-loop boson sampling, and linear optical quantum computing.

Fabrication and Characterization of Linear and Nonlinear Photonic Devices in Fused Silica by Femtosecond Laser Writing

Science.gov (United States)

Ng, Jason Clement

Femtosecond laser processing is a flexible, three-dimensional (3D) fabrication technique used to make integrated low-loss photonic devices in fused silica. My work expanded the suite of available optical devices through the design and optimization of linear optical components such as low-loss (70-nm spectral window. My work further complemented femtosecond laser processing with the development of nonlinear device capabilities. While thermal poling is a well known process, significant challenges had restricted the development of nonlinear devices in fused silica. The laser writing process would erase the induced nonlinearity (erasing) while a written waveguide core acted as a barrier to the thermal poling process (blocking). Using second harmonic (SH) microscopy, the effectiveness of thermal poling on laser-written waveguides was systematically analyzed leading to the technique of "double poling", which effectively overcomes the two challenges of erasing and blocking. In this new process the substrate is poled before and after waveguide writing to restore the induced nonlinearity within the vicinity of the waveguide to enable effective poling for inducing a second-order nonlinearity (SON) in fused silica. A new flexible, femtosecond laser based erasure process was also developed to enable quasi-phase matching and to form arbitrarily chirped gratings. Following this result, second harmonic generation (SHG) in a quasiphase-matched (QPM) femtosecond laser written waveguide device was demonstrated. SHG in a chirped QPM structure was also demonstrated to illustrate the flexibility of the femtosecond laser writing technique. These are the first demonstration of frequency doubling in an all-femtosecond-laser-written structure. A maximum SHG conversion efficiency of 1.3 +/- 0.1x10 -11/W-cm-2 was achieved for the fundamental wavelength of 1552.8 nm with a phase-matching bandwidth of 4.4 nm for a 10.0-mm-long waveguide. For a shorter sample, an effective SON of chi(2) = 0

Wide-band polarization controller for Si photonic integrated circuits.

Science.gov (United States)

Velha, P; Sorianello, V; Preite, M V; De Angelis, G; Cassese, T; Bianchi, A; Testa, F; Romagnoli, M

2016-12-15

A circuit for the management of any arbitrary polarization state of light is demonstrated on an integrated silicon (Si) photonics platform. This circuit allows us to adapt any polarization into the standard fundamental TE mode of a Si waveguide and, conversely, to control the polarization and set it to any arbitrary polarization state. In addition, the integrated thermal tuning allows kilohertz speed which can be used to perform a polarization scrambler. The circuit was used in a WDM link and successfully used to adapt four channels into a standard Si photonic integrated circuit.

Tight control of light trapping in surface addressable photonic crystal membranes: application to spectrally and spatially selective optical devices (Conference Presentation)

Science.gov (United States)

Letartre, Xavier; Blanchard, Cédric; Grillet, Christian; Jamois, Cécile; Leclercq, Jean-Louis; Viktorovitch, Pierre

2016-04-01

Surface addressable Photonic Crystal Membranes (PCM) are 1D or 2D photonic crystals formed in a slab waveguides where Bloch modes located above the light line are exploited. These modes are responsible for resonances in the reflection spectrum whose bandwidth can be adjusted at will. These resonances result from the coupling between a guided mode of the membrane and a free-space mode through the pattern of the photonic crystal. If broadband, these structures represent an ideal mirror to form compact vertical microcavity with 3D confinement of photons and polarization selectivity. Among numerous devices, low threshold VCSELs with remarkable and tunable modal properties have been demonstrated. Narrow band PCMs (or high Q resonators) have also been extensively used for surface addressable optoelectronic devices where an active material is embedded into the membrane, leading to the demonstration of low threshold surface emitting lasers, nonlinear bistables, optical traps... In this presentation, we will describe the main physical rules which govern the lifetime of photons in these resonant modes. More specifically, it will be emphasized that the Q factor of the PCM is determined, to the first order, by the integral overlap between the electromagnetic field distributions of the guided and free space modes and of the dielectric periodic perturbation which is applied to the homogeneous membrane to get the photonic crystal. It turns out that the symmetries of these distributions are of prime importance for the strength of the resonance. It will be shown that, by molding in-plane or vertical symmetries of Bloch modes, spectrally and spatially selective light absorbers or emitters can be designed. First proof of concept devices will be also presented.

Nonclassical light sources for silicon photonics

Science.gov (United States)

Bajoni, Daniele; Galli, Matteo

2017-09-01

Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

Low-cost access to development and manufacturing of photonic integrated circuits

NARCIS (Netherlands)

Smit, M.K.

2014-01-01

Generic photonic integration technology is rapidly gaining popularity. It applies the methodology that is so successful in microelectronics (CMOS technology) to the domain of photonics: providing lowcost access to highly standardized high-performance processes that support integration in a single

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-04-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

Passive Temperature Stabilization of Silicon Photonic Devices Using Liquid Crystals

Directory of Open Access Journals (Sweden)

Joanna Ptasinski

2014-03-01

Full Text Available In this work we explore the negative thermo-optic properties of liquid crystal claddings for passive temperature stabilization of silicon photonic integrated circuits. Photonic circuits are playing an increasing role in communications and computing, but they suffer from temperature dependent performance variation. Most existing techniques aimed at compensation of thermal effects rely on power hungry Joule heating. We show that integrating a liquid crystal cladding helps to minimize the effects of a temperature dependent drift. The advantage of liquid crystals lies in their high negative thermo-optic coefficients in addition to low absorption at the infrared wavelengths.

Photon and neutron doses of the personnel using moisture and density measurement devices

Energy Technology Data Exchange (ETDEWEB)

Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V. [Greek Atomic Energy Commission, Agia Paraskevi, Attiki, 60092 (Greece)

2006-07-01

The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a {sup 137}Cs source for density measurements and an {sup 241}Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

Photon and neutron doses of the personnel using moisture and density measurement devices

International Nuclear Information System (INIS)

Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V.

2006-01-01

The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a 137 Cs source for density measurements and an 241 Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

KAUST Repository

Shen, Chao

2017-02-28

A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

KAUST Repository

Shen, Chao; Lee, Changmin; Stegenburgs, Edgars; Lerma, Jorge Holguin; Ng, Tien Khee; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

Photon imaging using post-processed CMOS chips

NARCIS (Netherlands)

Melai, J.

2010-01-01

This thesis presents our work on an integrated photon detector made by post-processing of CMOS sensor arrays. The aim of the post-processing is to combine all elements of the detector into a single monolithic device. These elements include a photocathode to convert photon radiation into electronic

Photon technology. Hard photon technology; Photon technology. Hard photon gijutsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-03-01

Research results of hard photon technology have been summarized as a part of novel technology development highly utilizing the quantum nature of photon. Hard photon technology refers to photon beam technologies which use photon in the 0.1 to 200 nm wavelength region. Hard photon has not been used in industry due to the lack of suitable photon sources and optical devices. However, hard photon in this wavelength region is expected to bring about innovations in such areas as ultrafine processing and material synthesis due to its atom selective reaction, inner shell excitation reaction, and spatially high resolution. Then, technological themes and possibility have been surveyed. Although there are principle proposes and their verification of individual technologies for the technologies of hard photon generation, regulation and utilization, they are still far from the practical applications. For the photon source technology, the laser diode pumped driver laser technology, laser plasma photon source technology, synchrotron radiation photon source technology, and vacuum ultraviolet photon source technology are presented. For the optical device technology, the multi-layer film technology for beam mirrors and the non-spherical lens processing technology are introduced. Also are described the reduction lithography technology, hard photon excitation process, and methods of analysis and measurement. 430 refs., 165 figs., 23 tabs.

Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

Optimization and applications of planar silicon-based photonic crystal devices

DEFF Research Database (Denmark)

Borel, Peter Ingo; Frandsen, Lars Hagedorn; Burgos Leon, Juan

2005-01-01

such as topology optimization. We have also investigated a new device concept for coarse wavelength division de-multiplexing based on planar photonic crystal waveguides. The filtering of the wavelength channels has been realized by shifting the cut-off frequency of the fundamental photonic band gap mode...... in consecutive sections of the waveguide. Preliminary investigations show that this concepts allows coarse de-multiplexing to take place, but that optimization is required in order to reduce cross talk between adjacent channels and to increase the overall transmission. In this work the design, fabrication...

Silicon Photonic Integrated Circuit Mode Multiplexer

DEFF Research Database (Denmark)

Ding, Yunhong; Ou, Haiyan; Xu, Jing

2013-01-01

We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully...

Design and characterization of integrated components for SiN photonic quantum circuits.

Science.gov (United States)

Poot, Menno; Schuck, Carsten; Ma, Xiao-Song; Guo, Xiang; Tang, Hong X

2016-04-04

The design, fabrication, and detailed calibration of essential building blocks towards fully integrated linear-optics quantum computation are discussed. Photonic devices are made from silicon nitride rib waveguides, where measurements on ring resonators show small propagation losses. Directional couplers are designed to be insensitive to fabrication variations. Their offset and coupling lengths are measured, as well as the phase difference between the transmitted and reflected light. With careful calibrations, the insertion loss of the directional couplers is found to be small. Finally, an integrated controlled-NOT circuit is characterized by measuring the transmission through different combinations of inputs and outputs. The gate fidelity for the CNOT operation with this circuit is estimated to be 99.81% after post selection. This high fidelity is due to our robust design, good fabrication reproducibility, and extensive characterizations.

HPCAT: an integrated high-pressure synchrotron facility at the Advanced Photon Source

International Nuclear Information System (INIS)

Shen, Guoyin; Chow, Paul; Xiao, Yuming; Sinogeikin, Stanislav; Meng, Yue; Yang, Wenge; Liermann, Hans-Peter; Shebanova, Olga; Rod, Eric; Bommannavar, Arunkumar; Mao, Ho-Kwang

2008-01-01

The high pressure collaborative access team (HPCAT) was established to advance cutting edge, multidisciplinary, high-pressure (HP) science and technology using synchrotron radiation at sector 16 of the Advanced Photon Source of Argonne National Laboratory. The integrated HPCAT facility has established four operating beamlines in nine hutches. Two beamlines are split in energy space from the insertion device (16ID) line, whereas the other two are spatially divided into two fans from the bending magnet (16BM) line. An array of novel X-ray diffraction and spectroscopic techniques has been integrated with HP and extreme temperature instrumentation at HPCAT. With a multidisciplinary approach and multi-institution collaborations, the HP program at the HPCAT has been enabling myriad scientific breakthroughs in HP physics, chemistry, materials, and Earth and planetary sciences.

Chem/bio sensing with non-classical light and integrated photonics.

Science.gov (United States)

Haas, J; Schwartz, M; Rengstl, U; Jetter, M; Michler, P; Mizaikoff, B

2018-01-29

Modern quantum technology currently experiences extensive advances in applicability in communications, cryptography, computing, metrology and lithography. Harnessing this technology platform for chem/bio sensing scenarios is an appealing opportunity enabling ultra-sensitive detection schemes. This is further facilliated by the progress in fabrication, miniaturization and integration of visible and infrared quantum photonics. Especially, the combination of efficient single-photon sources together with waveguiding/sensing structures, serving as active optical transducer, as well as advanced detector materials is promising integrated quantum photonic chem/bio sensors. Besides the intrinsic molecular selectivity and non-destructive character of visible and infrared light based sensing schemes, chem/bio sensors taking advantage of non-classical light sources promise sensitivities beyond the standard quantum limit. In the present review, recent achievements towards on-chip chem/bio quantum photonic sensing platforms based on N00N states are discussed along with appropriate recognition chemistries, facilitating the detection of relevant (bio)analytes at ultra-trace concentration levels. After evaluating recent developments in this field, a perspective for a potentially promising sensor testbed is discussed for reaching integrated quantum sensing with two fiber-coupled GaAs chips together with semiconductor quantum dots serving as single-photon sources.

Superconducting detectors for semiconductor quantum photonics

International Nuclear Information System (INIS)

Reithmaier, Guenther M.

2015-01-01

In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

Photonic crystals: towards nanoscale photonic devices

National Research Council Canada - National Science Library

Lourtioz, J.-M

2005-01-01

.... From this point of view, the emergence of photonic bandgap materials and photonic crystals at the end of the 1980s can be seen as a revenge to the benefit this time of optics and electromagnetism. In the same way as the periodicity of solid state crystals determines the energy bands and the conduction properties of electrons, the periodical structur...

Fresnel Lenses fabricated by femtosecond laser micromachining on Polymer 1D Photonic Crystal

Directory of Open Access Journals (Sweden)

Guduru Surya S.K.

2013-11-01

Full Text Available We report the fabrication of micro Fresnel lenses by femtosecond laser surface ablation on polymer 1D photonic crystals. This device is designed to focus the transmitted wavelength of the photonic crystal and filter the wavelengths corresponding to the photonic band gap region. Integration of such devices in a wavelength selective light harvesting and filtering microchip can be achieved.

Long-wavelength photonic integrated circuits and avalanche photodetectors

Science.gov (United States)

Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve In

Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

Science.gov (United States)

Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

2012-09-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

International Nuclear Information System (INIS)

Liu, Jifeng; Kimerling, Lionel C; Michel, Jurgen

2012-01-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic–photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500–1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

Towards roll-to-roll manufacturing of polymer photonic devices

Science.gov (United States)

Subbaraman, Harish; Lin, Xiaohui; Ling, Tao; Guo, L. Jay; Chen, Ray T.

2014-03-01

Traditionally, polymer photonic devices are fabricated using clean-room processes such as photolithography, e-beam lithography, reactive ion etching (RIE) and lift-off methods etc, which leads to long fabrication time, low throughput and high cost. We have utilized a novel process for fabricating polymer photonic devices using a combination of imprinting and ink jet printing methods, which provides high throughput on a variety of rigid and flexible substrates with low cost. We discuss the manufacturing challenges that need to be overcome in order to realize true implementation of roll-to-roll manufacturing of flexible polymer photonic systems. Several metrology and instrumentation challenges involved such as availability of particulate-free high quality substrate, development and implementation of high-speed in-line and off-line inspection and diagnostic tools with adaptive control for patterned and unpatterned material films, development of reliable hardware, etc need to be addressed and overcome in order to realize a successful manufacturing process. Due to extreme resolution requirements compared to print media, the burden of software and hardware tools on the throughput also needs to be carefully determined. Moreover, the effect of web wander and variations in web speed need to accurately be determined in the design of the system hardware and software. In this paper, we show the realization of solutions for few challenges, and utilizing these solutions for developing a high-rate R2R dual stage ink-jet printer that can provide alignment accuracy of web speed of 5m/min. The development of a roll-to-roll manufacturing system for polymer photonic systems opens limitless possibilities for the deployment of high performance components in a variety of applications including communication, sensing, medicine, agriculture, energy, lighting etc.

Monolithic photonic integrated circuit with a GaN-based bent waveguide

Science.gov (United States)

Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

2018-06-01

Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

InP-based photonic integrated circuit platform on SiC wafer.

Science.gov (United States)

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

A segmented Hybrid Photon Detector with integrated auto-triggering front-end electronics for a PET scanner

CERN Document Server

Chesi, Enrico Guido; Joram, C; Mathot, S; Séguinot, Jacques; Weilhammer, P; Ciocia, F; De Leo, R; Nappi, E; Vilardi, I; Argentieri, A; Corsi, F; Dragone, A; Pasqua, D

2006-01-01

We describe the design, fabrication and test results of a segmented Hybrid Photon Detector with integrated auto-triggering front-end electronics. Both the photodetector and its VLSI readout electronics are custom designed and have been tailored to the requirements of a recently proposed novel geometrical concept of a Positron Emission Tomograph. Emphasis is put on the PET specific features of the device. The detector has been fabricated in the photocathode facility at CERN.

Vertically Integrated Edgeless Photon Imaging Camera

Energy Technology Data Exchange (ETDEWEB)

Fahim, Farah [Fermilab; Deptuch, Grzegorz [Fermilab; Shenai, Alpana [Fermilab; Maj, Piotr [AGH-UST, Cracow; Kmon, Piotr [AGH-UST, Cracow; Grybos, Pawel [AGH-UST, Cracow; Szczygiel, Robert [AGH-UST, Cracow; Siddons, D. Peter [Brookhaven; Rumaiz, Abdul [Brookhaven; Kuczewski, Anthony [Brookhaven; Mead, Joseph [Brookhaven; Bradford, Rebecca [Argonne; Weizeorick, John [Argonne

2017-01-01

The Vertically Integrated Photon Imaging Chip - Large, (VIPIC-L), is a large area, small pixel (65μm), 3D integrated, photon counting ASIC with zero-suppressed or full frame dead-time-less data readout. It features data throughput of 14.4 Gbps per chip with a full frame readout speed of 56kframes/s in the imaging mode. VIPIC-L contain 192 x 192 pixel array and the total size of the chip is 1.248cm x 1.248cm with only a 5μm periphery. It contains about 120M transistors. A 1.3M pixel camera module will be developed by arranging a 6 x 6 array of 3D VIPIC-L’s bonded to a large area silicon sensor on the analog side and to a readout board on the digital side. The readout board hosts a bank of FPGA’s, one per VIPIC-L to allow processing of up to 0.7 Tbps of raw data produced by the camera.

Long-wavelength III-V/silicon photonic integrated circuits

NARCIS (Netherlands)

Roelkens, G.C.; Kuyken, B.; Leo, F.; Hattasan, N.; Ryckeboer, E.M.P.; Muneeb, M.; Hu, C.L.; Malik, A.; Hens, Z.; Baets, R.G.F.; Shimura, Y.; Gencarelli, F.; Vincent, B.; Loo, van de R.; Verheyen, P.A.; Lepage, G.; Campenhout, van J.; Cerutti, L.; Rodriquez, J.B.; Tournie, E.; Chen, X; Nedeljkovic, G.; Mashanovich, G.; Liu, X.; Green, W.S.

2013-01-01

We review our work in the field of short-wave infrared and mid-infrared photonic integrated circuits for applications in spectroscopic sensing systems. Passive silicon waveguide circuits, GeSn photodetectors, the integration of III-V and IV-VI semiconductors on these circuits, and silicon nonlinear

Heat sinking of highly integrated photonic and electronic circuits

NARCIS (Netherlands)

van Rijn, M.B.J.; Smit, M.K.

2017-01-01

Dense integration of photonic and electronic circuits poses high requirements on thermal management. In this paper we present analysis of temperature distributions in PICs in InP membranes on top of a BiCMOS chip, which contain hot spots in both the photonic and the electronic layer (lasers, optical

Control of coherent information via on-chip photonic-phononic emitter-receivers.

Science.gov (United States)

Shin, Heedeuk; Cox, Jonathan A; Jarecki, Robert; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

2015-03-05

Rapid progress in integrated photonics has fostered numerous chip-scale sensing, computing and signal processing technologies. However, many crucial filtering and signal delay operations are difficult to perform with all-optical devices. Unlike photons propagating at luminal speeds, GHz-acoustic phonons moving at slower velocities allow information to be stored, filtered and delayed over comparatively smaller length-scales with remarkable fidelity. Hence, controllable and efficient coupling between coherent photons and phonons enables new signal processing technologies that greatly enhance the performance and potential impact of integrated photonics. Here we demonstrate a mechanism for coherent information processing based on travelling-wave photon-phonon transduction, which achieves a phonon emit-and-receive process between distinct nanophotonic waveguides. Using this device, physics--which supports GHz frequencies--we create wavelength-insensitive radiofrequency photonic filters with frequency selectivity, narrow-linewidth and high power-handling in silicon. More generally, this emit-receive concept is the impetus for enabling new signal processing schemes.

Flexible photonic-crystal Fano filters based on transferred semiconductor nanomembranes

Energy Technology Data Exchange (ETDEWEB)

Zhou Weidong; Yang Hongjun; Qiang Zexuan; Chen Li; Yang Weiquan; Chuwongin, Santhad; Zhao Deyin [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, TX 76019 (United States); Ma Zhenqiang; Qin Guoxuan; Pang Huiqing, E-mail: wzhou@uta.ed, E-mail: mazq@engr.wisc.ed [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI 53706 (United States)

2009-12-07

Crystalline semiconductor nanomembranes (NMs), which are transferable, stackable, bondable and manufacturable, offer unprecedented opportunities for unique and novel device applications. We report and review here nanophotonic devices based on stacked semiconductor NMs that were built on Si, glass and flexible PET substrates. Photonic-crystal Fano resonance based surface-normal optical filters and broadband reflectors have been demonstrated with unique angle and polarization properties. Such a low temperature NM stacking process can lead to a paradigm shift on silicon photonic integration and inorganic flexible photonics.

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

Fabrication of Refractive Index Tunable Polydimethylsiloxane Photonic Crystal for Biosensor Application

Science.gov (United States)

Raman, Karthik; Murthy, T. R. Srinivasa; Hegde, G. M.

Photonic crystal based nanostructures are expected to play a significant role in next generation nanophotonic devices. Recent developments in two-dimensional (2D) photonic crystal based devices have created widespread interest as such planar photonic structures are compatible with conventional microelectronic and photonic devices. Various optical components such as waveguides, resonators, modulators and demultiplexers have been designed and fabricated based on 2D photonic crystal geometry. This paper presents the fabrication of refractive index tunable Polydimethylsiloxane (PDMS) polymer based photonic crystals. The advantages of using PDMS are mainly its chemical stability, bio-compatibility and the stack reduces sidewall roughness scattering. The PDMS structure with square lattice was fabricated by using silicon substrate patterned with SU8-2002 resist. The 600 nm period grating of PDMS is then fabricated using Nano-imprinting. In addition, the refractive index of PDMS is modified using certain additive materials. The resulting photonic crystals are suitable for application in photonic integrated circuits and biological applications such as filters, cavities or microlaser waveguides.

Integrated Microelectronics and Photonics Active Cooling Technology (IMPACT)

National Research Council Canada - National Science Library

Bowers, John

2003-01-01

...) coolers and their integration with microelectronics and photonics. The majority of our research involves the development of this new technology through nanostructured materials design and growth...

Continuous-variable measurement-device-independent quantum key distribution with photon subtraction

Science.gov (United States)

Ma, Hong-Xin; Huang, Peng; Bai, Dong-Yun; Wang, Shi-Yu; Bao, Wan-Su; Zeng, Gui-Hua

2018-04-01

It has been found that non-Gaussian operations can be applied to increase and distill entanglement between Gaussian entangled states. We show the successful use of the non-Gaussian operation, in particular, photon subtraction operation, on the continuous-variable measurement-device-independent quantum key distribution (CV-MDI-QKD) protocol. The proposed method can be implemented based on existing technologies. Security analysis shows that the photon subtraction operation can remarkably increase the maximal transmission distance of the CV-MDI-QKD protocol, which precisely make up for the shortcoming of the original CV-MDI-QKD protocol, and one-photon subtraction operation has the best performance. Moreover, the proposed protocol provides a feasible method for the experimental implementation of the CV-MDI-QKD protocol.

Silicon photonic crystal all-optical logic gates

Energy Technology Data Exchange (ETDEWEB)

Fu, Yulan [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Hu, Xiaoyong, E-mail: xiaoyonghu@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Gong, Qihuang, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

2013-01-03

All-optical logic gates, including OR, XOR, NOT, XNOR, and NAND gates, are realized theoretically in a two-dimensional silicon photonic crystal using the light beam interference effect. The ingenious photonic crystal waveguide component design, the precisely controlled optical path difference, and the elaborate device configuration ensure the simultaneous realization of five types of logic gate with low-power and a contrast ratio between the logic states of “1” and “0” as high as 20 dB. High power is not necessary for operation of these logic gate devices. This offers a simple and effective approach for the realization of integrated all-optical logic devices.

Photon harvesting, coloring and polarizing in photovoltaic cell integrated color filters: efficient energy routing strategies for power-saving displays.

Science.gov (United States)

Wen, Long; Chen, Qin; Song, Shichao; Yu, Yan; Jin, Lin; Hu, Xin

2015-07-03

We describe the integral electro-optical strategies that combine the functionalities of photovoltaic (PV) electricity generation and color filtering as well as polarizing to realize more efficient energy routing in display technology. Unlike the conventional pigment-based filters and polarizers, which absorb substantial amounts of unwanted spectral components and dissipate them in the form of heat, we propose converting the energy of those photons into electricity by constructing PV cell-integrated color filters based on a selectively transmitting aluminum (Al) rear electrode perforated with nanoholes (NHs). Combining with a dielectric-metal-dielectric (DMD) front electrode, the devices were optimized to enable efficient cavity-enhanced photon recycling in the PV functional layers. We perform a comprehensive theoretical and numerical analysis to explore the extraordinary optical transmission (EOT) through the Al NHs and identify basic design rules for achieving structural coloring or polarizing in our PV color filters. We show that the addition of thin photoactive polymer layers on the symmetrically configured Al NH electrode narrows the bandwidth of the EOT-assisted high-pass light filtering due to the strongly damped anti-symmetric coupling of the surface modes excited on the front and rear surface of the Al NHs, which facilitates the whole visible coloring with relatively high purity for the devices. By engineering the cut-off characteristics of the plasmonic waveguide mode supported by the circular or ellipsoidal Al NHs, beyond the photon recycling capacity, PV color filters and PV polarizing color filters that allow polarization-insensitive and strong polarization-anisotropic color filtering were demonstrated. The findings presented here may shed some light on expanding the utilization of PV electricity generation across new-generation energy-saving electrical display devices.

Flexible and tunable silicon photonic circuits on plastic substrates

Science.gov (United States)

Chen, Yu; Li, Huan; Li, Mo

2012-09-01

Flexible microelectronics has shown tremendous promise in a broad spectrum of applications, especially those that cannot be addressed by conventional microelectronics in rigid materials and constructions. These unconventional yet important applications range from flexible consumer electronics to conformal sensor arrays and biomedical devices. A recent paradigm shift in implementing flexible electronics is to physically transfer highly integrated devices made in high-quality, crystalline semiconductors on to plastic substrates. Here we demonstrate a flexible form of silicon photonics using the transfer-and-bond fabrication method. Photonic circuits including interferometers and resonators have been transferred onto flexible plastic substrates with preserved functionalities and performance. By mechanically deforming, the optical characteristics of the devices can be tuned reversibly over a remarkably large range. The demonstration of the new flexible photonic systems based on the silicon-on-plastic (SOP) platform could open the door to many future applications, including tunable photonics, optomechanical sensors and biomechanical and bio-photonic probes.

Self-assembly as a design tool for the integration of photonic structures into excitonic solar cells

KAUST Repository

Guldin, S.

2011-09-20

One way to successfully enhance light harvesting of excitonic solar cells is the integration of optical elements that increase the photon path length in the light absorbing layer. Device architectures which incorporate structural order in form of one- or three-dimensional refractive index lattices can lead to the localization of light in specific parts of the spectrum, while retaining the cell\\'s transparency in others. Herein, we present two routes for the integration of photonic crystals (PCs) into dye-sensitized solar cells (DSCs). In both cases, the self-assembly of soft matter plays a key role in the fabrication process of the TiO2 electrode. One approach relies on a combination of colloidal self-assembly and the self-assembly of block copolymers, resulting in a double layer dye-sensitized solar cell with increased light absorption from the 3D PC element. An alternative route is based on the fact that the refractive index of the mesoporous layer can be finely tuned by the interplay between block copolymer self-assembly and hydrolytic TiO2 sol-gel chemistry. Alternating deposition of high and low refractive index layers enables the integration of a 1D PC into a DSC.

How complex can integrated optical circuits become?

NARCIS (Netherlands)

Smit, M.K.; Hill, M.T.; Baets, R.G.F.; Bente, E.A.J.M.; Dorren, H.J.S.; Karouta, F.; Koenraad, P.M.; Koonen, A.M.J.; Leijtens, X.J.M.; Nötzel, R.; Oei, Y.S.; Waardt, de H.; Tol, van der J.J.G.M.; Khoe, G.D.

2007-01-01

The integration scale in Photonic Integrated Circuits will be pushed to VLSI-level in the coming decade. This will bring major changes in both application and manufacturing. In this paper developments in Photonic Integration are reviewed and the limits for reduction of device demensions are

mm-Wave Wireless Communications based on Silicon Photonics Integrated Circuits

DEFF Research Database (Denmark)

Rommel, Simon; Heck, Martijn; Vegas Olmos, Juan José

Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applica...

Photonics in Environment and Energy. A technology roadmap for SMEs on new photonic devices and materials

Energy Technology Data Exchange (ETDEWEB)

Loeffler, Jonathan; Salingre, Anthony; Vitale, David; Yatsunenko, Sergey; Lojkowski, Witold

2012-11-01

Scientific and technological developments in photonics will have a major influence on lots of industries over the next ten to fifteen years. In this highly evolving field, the long-term competitiveness of companies, and especially of Small and Medium sized Enterprises (SMEs), mainly depends on their ability to offer a good product and to establish a successful market position, which is well connected to the management of the hidden potential in existing technological capabilities. Technology roadmaps are interesting tools used to portray the structural and temporal relationships among science, technology and applications and thus help in the decision-making process to remain successful on the market. The present roadmap aims at identifying technological trends for new photonic devices and nanophotonic materials, mainly in terms of market development. It has the main objective to inform SMEs about new scientific discoveries and developments in photonics and their related problem-solving potential for future products and applications in the Environment and Energy sector. This roadmap is part of a set of four roadmaps about the use of photonic technologies in the industrial sectors of ICT, Heath and Well-being, Environment and Energy and Safety and Security. They were developed in the course of the European project PhotonicRoadSME. Altogether, these roadmaps will contribute to support SMEs in their strategic planning for future applications and products.

Construction of Nanowire Heterojunctions: Photonic Function-Oriented Nanoarchitectonics.

Science.gov (United States)

Li, Yong Jun; Yan, Yongli; Zhao, Yong Sheng; Yao, Jiannian

2016-02-10

Nanophotonics has received broad research interest because it may provide an alternative opportunity to overcome the fundamental limitations of electronic circuits. So far, diverse photonic functions, such as light generation, modulation, and detection, have been realized based on various nano-materials. The exact structural features of these material systems, including geometric characteristics, surface morphology, and material composition, play a key role in determining the photonic functions. Therefore, rational designs and constructions of materials on both morphological and componential levels, namely nanoarchitectonics, are indispensable for any photonic device with specific functionalities. Recently, a series of nanowire heterojunctions (NWHJs), which are usually made from two or more kinds of material compositions, were constructed for novel photonic applications based on various interactions between different materials at the junctions, for instance, energy transfer, exciton-plasmon coupling, or photon-plasmon coupling. A summary of these works is necessary to get a more comprehensive understanding of the relationship between photonic functions and architectonics of NWHJs, which will be instructive for designing novel photonic devices towards integrated circuits. Here, photonic function oriented nanoarchitectonics based on recent breakthroughs in nanophotonic devices are discussed, with emphasis on the design mechanisms, fabrication strategies, and excellent performances. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

Science.gov (United States)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

Integration of single-photon sources and detectors on GaAs

NARCIS (Netherlands)

Digeronimo, G.E.; Petruzzella, Maurangelo; Birindelli, Simone; Gaudio, Rosalinda; Poor, Sartoon Fattah; van Otten, Frank W.M.; Fiore, Andrea

2016-01-01

Quantum photonic integrated circuits (QPICs) on a GaAs platform allow the generation, manipulation, routing, and detection of non-classical states of light, which could pave the way for quantum information processing based on photons. In this article, the prototype of a multi-functional QPIC is

Historical overview and future approach on integrated photonic circuit technologies; Shusekiko gijutsu no ayumi to korekara no tenkai

Energy Technology Data Exchange (ETDEWEB)

Nakajima, H. [Waseda University, Tokyo (Japan). School of Science and Engineering

1997-08-01

Integration of optical circuits is discussed. A number of devices used in optical communication even today treat light beams emitted by optical fibers or by semiconductor lasers as spatial beams. In making preparations for mass production in the future, the effect of mere miniaturization of optical systems on optical substrates is quite limited. Realizing the presence of such a limit is one of the motivations to endeavor to embody integrated photonic circuits. In this report, comments will be focused only on the technology of waveguide type integration. Integrated circuits on a compound semiconductor substrate are quite difficult to deal with, more difficult than generally supposed. This is a task with a bright future when reviewed from the viewpoint of the effective use of the quantum effect. If integration is to be effected on a Si substrate, possibilities are high that the effort will bear fruit now that the substrate can withstand the full application of micro-machining. An LiNbO3 wave path, however, wants a breakthrough in the switching technology. As for the material to coat substrates with, polymer based nonlinear optical materials are not satisfying. The integrated photonic circuit technology can be said to be on the stage where questions limitlessly surface also in the science of materials. 14 refs., 2 tabs.

Single-photon superradiance and cooperative Lamb shift in an optoelectronic device (Conference Presentation)

Science.gov (United States)

Sirtori, Carlo

2017-02-01

Superradiance is one of the many fascinating phenomena predicted by quantum electrodynamics that have first been experimentally demonstrated in atomic systems and more recently in condensed matter systems like quantum dots, superconducting q-bits, cyclotron transitions and plasma oscillations in quantum wells (QWs). It occurs when a dense collection of N identical two-level emitters are phased via the exchange of photons, giving rise to enhanced light-matter interaction, hence to a faster emission rate. Of great interest is the regime where the ensemble interacts with one photon only and therefore all of the atoms, but one, are in the ground state. In this case the quantum superposition of all possible configurations produces a symmetric state that decays radiatively with a rate N times larger than that of the individual oscillators. This phenomenon, called single photon superradiance, results from the exchange of real photons among the N emitters. Yet, to single photon superradiance is also associated another collective effect that renormalizes the emission frequency, known as cooperative Lamb shift. In this work, we show that single photon superradiance and cooperative Lamb shift can be engineered in a semiconductor device by coupling spatially separated plasma resonances arising from the collective motion of confined electrons in QWs. These resonances hold a giant dipole along the growth direction z and have no mutual Coulomb coupling. They thus behave as a collection of macro-atoms on different positions along the z axis. Our device is therefore a test bench to simulate the low excitation regime of quantum electrodynamics.

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Ultrafast-laser-inscribed 3D integrated photonics: challenges and emerging applications

Directory of Open Access Journals (Sweden)

Gross S.

2015-11-01

Full Text Available Since the discovery that tightly focused femtosecond laser pulses can induce a highly localised and permanent refractive index modification in a large number of transparent dielectrics, the technique of ultrafast laser inscription has received great attention from a wide range of applications. In particular, the capability to create three-dimensional optical waveguide circuits has opened up new opportunities for integrated photonics that would not have been possible with traditional planar fabrication techniques because it enables full access to the many degrees of freedom in a photon. This paper reviews the basic techniques and technological challenges of 3D integrated photonics fabricated using ultrafast laser inscription as well as reviews the most recent progress in the fields of astrophotonics, optical communication, quantum photonics, emulation of quantum systems, optofluidics and sensing.

Integrated Sources of Polarization Entangled Photon Pair States via Spontaneous Four-Wave Mixing in AlGaAs Waveguides

Science.gov (United States)

Kultavewuti, Pisek

Polarization-entangled photon pair states (PESs) are indispensable in several quantum protocols that should be implemented in an integrated photonic circuit for realizing a practical quantum technology. Preparing such states in integrated waveguides is in fact a challenge due to polarization mode dispersion. Unlike other conventional ways that are plagued with complications in fabrication or in state generation, in this thesis, the scheme based on parallel spontaneous four-wave mixing processes of two polarization waveguide modes is thoroughly studied in theory and experimentation for the polarization entanglement generation. The scheme in fact needs the modal dispersion, contradictory to the general perception, as revealed by a full quantum mechanical framework. The proper modal dispersion balances the effects of temporal walk-off and state factorizability. The study also shows that the popular standard platform such as a silicon-on-insulator wafer is far from suitable to implement the proposed simple generation technique. Proven by the quantum state tomography, the technique produces a highly-entangled state with a maximum concurrence of 0.97 +/- 0:01 from AlGaAs waveguides. In addition, the devices directly generated Bell states with an observed fidelity of 0.92 +/- 0:01 without any post-generation compensating steps. Novel suspended device structures, including their components, are then investigated numerically and experimentally characterized in pursuit of finding the geometry with the optimal dispersion property. The 700 nm x 1100 nm suspended rectangular waveguide is identified as the best geometry with a predicted maximum concurrence of 0.976 and a generation bandwidth of 3.3 THz. The suspended waveguide fabrication procedure adds about 15 dB/cm and 10 dB/cm of propagation loss to the TE and TM mode respectively, on top of the loss in corresponding full-cladding waveguides. Bridges, which structurally support the suspended waveguides, are optimized using

Integrated lenses in polystyrene microfluidic devices

KAUST Repository

Fan, Yiqiang; Li, Huawei; Foulds, Ian G.

2013-01-01

This paper reports a new method for integrating microlenses into microfluidic devices for improved observation. Two demonstration microfluidic devices were provided which were fabricated using this new technique. The integrated microlenses were

On-chip photonic particle sensor

Science.gov (United States)

Singh, Robin; Ma, Danhao; Agarwal, Anu; Anthony, Brian

2018-02-01

We propose an on-chip photonic particle sensor design that can perform particle sizing and counting for various environmental applications. The sensor is based on micro photonic ring resonators that are able to detect the presence of the free space particles through the interaction with their evanescent electric field tail. The sensor can characterize a wide range of the particle size ranging from a few nano meters to micron ( 1 micron). The photonic platform offers high sensitivity, compactness, fast response of the device. Further, FDTD simulations are performed to analyze different particle-light interactions. Such a compact and portable platform, packaged with integrated photonic circuit provides a useful sensing modality in space shuttle and environmental applications.

Optimized optical devices for edge-coupling-enabled silicon photonics platform

Science.gov (United States)

Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

2018-02-01

We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

High-efficiency power transfer for silicon-based photonic devices

Science.gov (United States)

Son, Gyeongho; Yu, Kyoungsik

2018-02-01

We demonstrate an efficient coupling of guided light of 1550 nm from a standard single-mode optical fiber to a silicon waveguide using the finite-difference time-domain method and propose a fabrication method of tapered optical fibers for efficient power transfer to silicon-based photonic integrated circuits. Adiabatically-varying fiber core diameters with a small tapering angle can be obtained using the tube etching method with hydrofluoric acid and standard single-mode fibers covered by plastic jackets. The optical power transmission of the fundamental HE11 and TE-like modes between the fiber tapers and the inversely-tapered silicon waveguides was calculated with the finite-difference time-domain method to be more than 99% at a wavelength of 1550 nm. The proposed method for adiabatic fiber tapering can be applied in quantum optics, silicon-based photonic integrated circuits, and nanophotonics. Furthermore, efficient coupling within the telecommunication C-band is a promising approach for quantum networks in the future.

High performance bio-integrated devices

Science.gov (United States)

Kim, Dae-Hyeong; Lee, Jongha; Park, Minjoon

2014-06-01

In recent years, personalized electronics for medical applications, particularly, have attracted much attention with the rise of smartphones because the coupling of such devices and smartphones enables the continuous health-monitoring in patients' daily life. Especially, it is expected that the high performance biomedical electronics integrated with the human body can open new opportunities in the ubiquitous healthcare. However, the mechanical and geometrical constraints inherent in all standard forms of high performance rigid wafer-based electronics raise unique integration challenges with biotic entities. Here, we describe materials and design constructs for high performance skin-mountable bio-integrated electronic devices, which incorporate arrays of single crystalline inorganic nanomembranes. The resulting electronic devices include flexible and stretchable electrophysiology electrodes and sensors coupled with active electronic components. These advances in bio-integrated systems create new directions in the personalized health monitoring and/or human-machine interfaces.

125 GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit

Science.gov (United States)

Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

2017-12-01

InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing module size are important challenges for the design of such detector system. Here we present for the first time an InGaAs/InP SPD with 1.25 GHz sine wave gating using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturization of avalanche extraction for high-frequency sine wave gating. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of MIRC, and the SPD exhibits excellent performance with 27.5 % photon detection efficiency, 1.2 kcps dark count rate, and 9.1 % afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

Fibre optic communication key devices

CERN Document Server

Grote, Norbert

2017-01-01

The book gives an in-depth description of key devices of current and next generation fibre optic communication networks. Devices treated include semiconductor lasers, optical amplifiers, modulators, wavelength filters and other passives, detectors, all-optical switches, but relevant properties of optical fibres and network aspects are included as well. The presentations include the physical principles underlying the various devices, technologies used for their realization, typical performance characteristics and limitations, but development trends towards more advanced components are also illustrated. This new edition of a successful book was expanded and updated extensively. The new edition covers among others lasers for optical communication, optical switches, hybrid integration, monolithic integration and silicon photonics. The main focus is on Indium phosphide-based structures but silicon photonics is included as well. The book covers relevant principles, state-of-the-art implementations, status of curren...

Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum.

Science.gov (United States)

Lu, Tsung-Ju; Fanto, Michael; Choi, Hyeongrak; Thomas, Paul; Steidle, Jeffrey; Mouradian, Sara; Kong, Wei; Zhu, Di; Moon, Hyowon; Berggren, Karl; Kim, Jeehwan; Soltani, Mohammad; Preble, Stefan; Englund, Dirk

2018-04-30

We demonstrate a wide-bandgap semiconductor photonics platform based on nanocrystalline aluminum nitride (AlN) on sapphire. This photonics platform guides light at low loss from the ultraviolet (UV) to the visible spectrum. We measure ring resonators with intrinsic quality factor (Q) exceeding 170,000 at 638 nm and Q >20,000 down to 369.5 nm, which shows a promising path for low-loss integrated photonics in UV and visible spectrum. This platform opens up new possibilities in integrated quantum optics with trapped ions or atom-like color centers in solids, as well as classical applications including nonlinear optics and on-chip UV-spectroscopy.

Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

Science.gov (United States)

Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2017-07-10

We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

Science.gov (United States)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

NASA Electronic Parts and Packaging (NEPP): Space Qualification Guidelines of Optoelectronic and Photonic Devices for Optical Communication Systems

Science.gov (United States)

Kim, Quiesup

2001-01-01

Key elements of space qualification of opto-electric and photonic optical devices were overviewed. Efforts were concentrated on the reliability concerns of the devices needed for potential applications in space environments. The ultimate goal for this effort is to gradually establish enough data to develop a space qualification plan of newly developed specific photonic parts using empirical and numerical models to assess the life-time and degradation of the devices for potential long term space missions.

Compact integrated optical devices for optical sensor and switching applications

NARCIS (Netherlands)

Kauppinen, L.J.

2010-01-01

This thesis describes the design, fabrication, and characterization of compact optical devices for sensing and switching applications. Our focus has been to realize the devices using CMOS-compatible fabrication processes. Particularly the silicon photonics fabrication platform, ePIXfab, has been

Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

International Nuclear Information System (INIS)

Winden, A; Mikulics, M; Grützmacher, D; Hardtdegen, H

2013-01-01

Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range. (paper)

Graphene-on-silicon hybrid plasmonic-photonic integrated circuits.

Science.gov (United States)

Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

2017-06-16

Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

Free-space coherent optical communication with orbital angular, momentum multiplexing/demultiplexing using a hybrid 3D photonic integrated circuit.

Science.gov (United States)

Guan, Binbin; Scott, Ryan P; Qin, Chuan; Fontaine, Nicolas K; Su, Tiehui; Ferrari, Carlo; Cappuzzo, Mark; Klemens, Fred; Keller, Bob; Earnshaw, Mark; Yoo, S J B

2014-01-13

We demonstrate free-space space-division-multiplexing (SDM) with 15 orbital angular momentum (OAM) states using a three-dimensional (3D) photonic integrated circuit (PIC). The hybrid device consists of a silica planar lightwave circuit (PLC) coupled to a 3D waveguide circuit to multiplex/demultiplex OAM states. The low excess loss hybrid device is used in individual and two simultaneous OAM states multiplexing and demultiplexing link experiments with a 20 Gb/s, 1.67 b/s/Hz quadrature phase shift keyed (QPSK) signal, which shows error-free performance for 379,960 tested bits for all OAM states.

Compact, Low-Power, and High-Speed Graphene-Based Integrated Photonic Modulator Technology

Science.gov (United States)

2017-11-02

Compact, Low-Power, and High-Speed Graphene- Based Integrated Photonic Modulator Technology The views, opinions and/or findings contained in this...Graphene-Based Integrated Photonic Modulator Technology Report Term: 0-Other Email: sorger@gwu.edu Distribution Statement: 1-Approved for public release...which is an all-time record at Georgia Tech. Protocol Activity Status: Technology Transfer: Nothing to Report PARTICIPANTS: Person Months Worked

Enhancement of broadband optical absorption in photovoltaic devices by band-edge effect of photonic crystals.

Science.gov (United States)

Tanaka, Yoshinori; Kawamoto, Yosuke; Fujita, Masayuki; Noda, Susumu

2013-08-26

We numerically investigate broadband optical absorption enhancement in thin, 400-nm thick microcrystalline silicon (µc-Si) photovoltaic devices by photonic crystals (PCs). We realize absorption enhancement by coupling the light from the free space to the large area resonant modes at the photonic band-edge induced by the photonic crystals. We show that multiple photonic band-edge modes can be produced by higher order modes in the vertical direction of the Si photovoltaic layer, which can enhance the absorption on multiple wavelengths. Moreover, we reveal that the photonic superlattice structure can produce more photonic band-edge modes that lead to further optical absorption. The absorption average in wavelengths of 500-1000 nm weighted to the solar spectrum (AM 1.5) increases almost twice: from 33% without photonic crystal to 58% with a 4 × 4 period superlattice photonic crystal; our result outperforms the Lambertian textured structure.

Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

Science.gov (United States)

Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

2013-03-25

n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

Plasma Photonic Devices for High Energy Density Science

International Nuclear Information System (INIS)

Kodama, R.

2005-01-01

High power laser technologies are opening a variety of attractive fields of science and technology using high energy density plasmas such as plasma physics, laboratory astrophysics, material science, nuclear science including medical applications and laser fusion. The critical issues in the applications are attributed to the control of intense light and enormous density of charged particles including efficient generation of the particles such as MeV electrons and protons with a current density of TA/cm2. Now these application possibilities are limited only by the laser technology. These applications have been limited in the control of the high power laser technologies and their optics. However, if we have another device consisted of the 4th material, i.e. plasma, we will obtain a higher energy density condition and explore the application possibilities, which could be called high energy plasma device. One of the most attractive devices has been demonstrated in the fast ignition scheme of the laser fusion, which is cone-guiding of ultra-intense laser light in to high density regions1. This is one of the applications of the plasma device to control the ultra-intense laser light. The other role of the devices consisted of transient plasmas is control of enormous energy-density particles in a fashion analogous to light control with a conventional optical device. A plasma fibre (5?m/1mm), as one example of the devices, has guided and deflected the high-density MeV electrons generated by ultra-intense laser light 2. The electrons have been well collimated with either a lens-like plasma device or a fibre-like plasma, resulting in isochoric heating and creation of ultra-high pressures such as Giga bar with an order of 100J. Plasmas would be uniquely a device to easily control the higher energy density particles like a conventional optical device as well as the ultra-intense laser light, which could be called plasma photonic device. (Author)

Amplitude distributions of dark counts and photon counts in NbN superconducting single-photon detectors integrated with the HEMT readout

Energy Technology Data Exchange (ETDEWEB)

Kitaygorsky, J. [Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft (Netherlands); Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 (United States); Słysz, W., E-mail: wslysz@ite.waw.pl [Institute of Electron Technology, PL-02 668 Warsaw (Poland); Shouten, R.; Dorenbos, S.; Reiger, E.; Zwiller, V. [Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft (Netherlands); Sobolewski, Roman [Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 (United States)

2017-01-15

Highlights: • A new operation regime of NbN superconducting single-photon detectors (SSPDs). • A better understanding of the origin of dark counts generated by the detector. • A promise of PNR functionality in SSPD measurements. - Abstract: We present a new operation regime of NbN superconducting single-photon detectors (SSPDs) by integrating them with a low-noise cryogenic high-electron-mobility transistor and a high-load resistor. The integrated sensors are designed to get a better understanding of the origin of dark counts triggered by the detector, as our scheme allows us to distinguish the origin of dark pulses from the actual photon pulses in SSPDs. The presented approach is based on a statistical analysis of amplitude distributions of recorded trains of the SSPD photoresponse transients. It also enables to obtain information on energy of the incident photons, as well as demonstrates some photon-number-resolving capability of meander-type SSPDs.

Analysis of ultra-high sensitivity configuration in chip-integrated photonic crystal microcavity bio-sensors

International Nuclear Information System (INIS)

Chakravarty, Swapnajit; Hosseini, Amir; Xu, Xiaochuan; Zhu, Liang; Zou, Yi; Chen, Ray T.

2014-01-01

We analyze the contributions of quality factor, fill fraction, and group index of chip-integrated resonance microcavity devices, to the detection limit for bulk chemical sensing and the minimum detectable biomolecule concentration in biosensing. We analyze the contributions from analyte absorbance, as well as from temperature and spectral noise. Slow light in two-dimensional photonic crystals provide opportunities for significant reduction of the detection limit below 1 × 10 −7 RIU (refractive index unit) which can enable highly sensitive sensors in diverse application areas. We demonstrate experimentally detected concentration of 1 fM (67 fg/ml) for the binding between biotin and avidin, the lowest reported till date

Photonic integration and components development for a Ku-band phased array antenna system

NARCIS (Netherlands)

Marpaung, D.A.I.; Zhuang, L.; Burla, M.; Roeloffzen, C.G.H.; Noharet, Bertrand; Wang, Qin; Beeker, W.P.; Beeker, Willem; Leinse, Arne; Heideman, Rene

2011-01-01

In this paper the development of a phased array antenna system using a photonic beamformer is reported. The paper emphasizes on the photonic integration between two main components of the beamformer, namely the photonic beamformer chip and the electroabsorption modulator array. System level

Optical isolation based on space-time engineered asymmetric photonic band gaps

Science.gov (United States)

Chamanara, Nima; Taravati, Sajjad; Deck-Léger, Zoé-Lise; Caloz, Christophe

2017-10-01

Nonreciprocal electromagnetic devices play a crucial role in modern microwave and optical technologies. Conventional methods for realizing such systems are incompatible with integrated circuits. With recent advances in integrated photonics, the need for efficient on-chip magnetless nonreciprocal devices has become more pressing than ever. This paper leverages space-time engineered asymmetric photonic band gaps to generate optical isolation. It shows that a properly designed space-time modulated slab is highly reflective/transparent for opposite directions of propagation. The corresponding design is magnetless, accommodates low modulation frequencies, and can achieve very high isolation levels. An experimental proof of concept at microwave frequencies is provided.

Investigation of 2D photonic crystal structure based channel drop filter using quad shaped photonic crystal ring resonator for CWDM system

Energy Technology Data Exchange (ETDEWEB)

Chhipa, Mayur Kumar, E-mail: mayurchhipa1@gmail.com; Dusad, Lalit Kumar [Government Engineering College Ajmer, Rajasthan (India); Rajasthan Technical University, Kota, Rajasthan (India)

2016-05-06

In this paper, the design & performance of two dimensional (2-D) photonic crystal structure based channel drop filter is investigated using quad shaped photonic crystal ring resonator. In this paper, Photonic Crystal (PhC) based on square lattice periodic arrays of Gallium Indium Phosphide (GaInP) rods in air structure have been investigated using Finite Difference Time Domain (FDTD) method and photonic band gap is being calculated using Plane Wave Expansion (PWE) method. The PhC designs have been optimized for telecommunication wavelength λ= 1571 nm by varying the rods lattice constant. The number of rods in Z and X directions is 21 and 20, with lattice constant 0.540 nm it illustrates that the arrangement of Gallium Indium Phosphide (GaInP) rods in the structure which gives the overall size of the device around 11.4 µm × 10.8 µm. The designed filter gives good dropping efficiency using 3.298, refractive index. The designed structure is useful for CWDM systems. This device may serve as a key component in photonic integrated circuits. The device is ultra compact with the overall size around 123 µm{sup 2}.

On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

Science.gov (United States)

Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

2015-02-11

The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

Dual curved photonic crystal ring resonator based channel drop filter using two-dimensional photonic crystal structure

Energy Technology Data Exchange (ETDEWEB)

Chhipa, Mayur Kumar, E-mail: mayurchhipa1@gmail.com [Deptt. of Electronics and Communication Engineering, Government Engineering College Ajmer Rajasthan INDIA (India); Dusad, Lalit Kumar [Rajasthan Technical University Kota, Rajasthan (India)

2016-05-06

In this paper channel drop filter (CDF) is designed using dual curved photonic crystal ring resonator (PCRR). The photonic band gap (PBG) is calculated by plane wave expansion (PWE) method and the photonic crystal (PhC) based on two dimensional (2D) square lattice periodic arrays of silicon (Si) rods in air structure have been investigated using finite difference time domain (FDTD) method. The number of rods in Z and X directions is 21 and 20 respectively with lattice constant 0.540 nm and rod radius r = 0.1 µm. The channel drop filter has been optimized for telecommunication wavelengths λ = 1.591 µm with refractive indices 3.533. In the designed structure further analysis is also done by changing whole rods refractive index and it has been observed that this filter may be used for filtering several other channels also. The designed structure is useful for CWDM systems. This device may serve as a key component in photonic integrated circuits. The device is ultra compact with the overall size around 123 µm{sup 2}.

Photodetection, photon event localization and position tomography device comprising a gammagraphy camera equipped wit such devices

International Nuclear Information System (INIS)

Jatteau, M.R.

1984-01-01

This device of photodetection and photon event (and noticeably scintillations) localization comprises at least a photomultiplier tube with unique photomultiplying structure and in front of this tube, a net of juxtaposed conduction metal wires excited by voltage pulses. This net comprises only 2n metallic wires to assure the localization of 2sup(2n) possible positions, and that is one of its characteristics [fr

Photonic integrated multiwavelength transmitters for fiber-to-the-home networks

NARCIS (Netherlands)

Lawniczuk, K.; Smit, M.K.; Piramidowicz, P.; Szczepanski, P.; Leijtens, X.J.M.; Wale, M.J.

2012-01-01

In this paper we present measurement results of monolithically integrated photonic transmitters for application in the next generation Fiber-to-the-Home (FTTH) networks. 4- and 8-channel transmitters were integrated onto a single chip, using multiple lasers with distributed Bragg reflector (DBR)

THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

DEFF Research Database (Denmark)

Bao, Hualong; Markos, Christos; Nielsen, Kristian

2014-01-01

In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

Integrated lenses in polystyrene microfluidic devices

KAUST Repository

Fan, Yiqiang

2013-04-01

This paper reports a new method for integrating microlenses into microfluidic devices for improved observation. Two demonstration microfluidic devices were provided which were fabricated using this new technique. The integrated microlenses were fabricated using a free-surface thermo-compression molding method on a polystyrene (PS) sheet which was then bonded on top of microfluidic channels as a cover plate, with the convex microlenses providing a magnified image of the channel for the easier observation of the flow in the microchannels. This approach for fabricating the integrated microlens in microfluidic devices is rapid, low cost and without the requirement of cleanroom facilities. © 2013 IEEE.

Nanophotonic integrated circuits from nanoresonators grown on silicon.

Science.gov (United States)

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

Photonic crystal resonator integrated in a microfluidic system

DEFF Research Database (Denmark)

Rodrigues de Sousa Nunes, Pedro André; Mortensen, Niels Asger; Kutter, Jörg Peter

2008-01-01

We report on a novel optofluidic system consisting of a silica-based 1D photonic crystal, integrated planar waveguides, and electrically insulated fluidic channels. An array of pillars in a microfluidic channel designed for electrochromatography is used as a resonator for on-column label...

Preliminary thermo-mechanical analysis of the second phase photon shutters for insertion device beamline front ends at the Advanced Photon Source

International Nuclear Information System (INIS)

Nian, H.L.T.; Sheng, I.C.A.; Kuzay, T.M.

1993-01-01

The photon shutters (PS) on the insertion device front end of the beamlines at the Advanced Photon Source (APS) are designed to fully intercept powerful 7-GeV undulator radiation. Traditional materials (oxygen-free copper and Glidcop) are used in their construction. Initially, the APS proposes to operate the storage ring at 100 mA. In later phases of operation, the APS will operate the storage ring at 300 mA. The heat flux from the undulators is enormous. For example, in the later phase of the project, the first photon shutter (PS1) placed at a distance of 17 m from the Undulator A source will be subjected to 1400 W/mm 2 at normal incidence with a total power of 11.4 kW. The PS uses an enhanced heat transfer mechanism developed at Argonne National Laboratory, which increases the convective heat transfer coefficient to about 3 W/cm 2 · degrees C with single phase water as the coolant. To be able to handle the expected three-fold increase in the intense heat flux, some low-Z materials (such as beryllium or graphite), which can absorb the x-rays through their thickness, are now considered as the facing material on the absorber base plate of the PS. Our analysis of PSI indicates that the face plate made of either graphite or beryllium retains its integrity in most of the cases. The maximum effective stress of the absorber plate (made of annealed OFHC) exceeds the yield strength (50 MPa) except in the case of an absorber with a 10-mm graphite face plate

Characterization of Sphinx1 ASIC X-ray detector using photon counting and charge integration

Science.gov (United States)

Habib, A.; Arques, M.; Moro, J.-L.; Accensi, M.; Stanchina, S.; Dupont, B.; Rohr, P.; Sicard, G.; Tchagaspanian, M.; Verger, L.

2018-01-01

Sphinx1 is a novel pixel architecture adapted for X-ray imaging, it detects radiation by photon counting and charge integration. In photon counting mode, each photon is compensated by one or more counter-charges typically consisting of 100 electrons (e-) each. The number of counter-charges required gives a measure of the incoming photon energy, thus allowing spectrometric detection. Pixels can also detect radiation by integrating the charges deposited by all incoming photons during one image frame and converting this analog value into a digital response with a 100 electrons least significant bit (LSB), based on the counter-charge concept. A proof of concept test chip measuring 5 mm × 5 mm, with 200 μm × 200 μm pixels has been produced and characterized. This paper provides details on the architecture and the counter-charge design; it also describes the two modes of operation: photon counting and charge integration. The first performance measurements for this test chip are presented. Noise was found to be ~80 e-rms in photon counting mode with a power consumption of only 0.9 μW/pixel for the static analog part and 0.3 μW/pixel for the static digital part.

Mechanical devices for aligning optical fibers using elastic metal-deformation techniques

NARCIS (Netherlands)

van Zantvoort, J.H.C.; Plukker, S.G.L.; Kuindersma, P.I.; Mekonnen, K.A.; de Waardt, H.

2016-01-01

We designed and realized two different mechanical devices for aligning standard lensed telecom fibers to indium-phosphide-based photonic integrated circuits (PICs). The first device (Device A) can align one fiber in three degrees of freedom, while the second device (Device B) can align two fiber

Integrated microwave photonics

NARCIS (Netherlands)

Marpaung, D.A.I.; Roeloffzen, C.G.H.; Heideman, Rene; Leinse, Arne; Sales, S.; Capmany, J.

2013-01-01

Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A

Si micro photonics for optical interconnection

International Nuclear Information System (INIS)

Wada, K.; Ahn, D.H.; Lim, D.R.; Michel, J.; Kimerling, L.C.

2006-01-01

This paper reviews current status of silicon microphotonics and the recent prototype of on-chip optical interconnection. Si microphotonics pursues complementary metal oxide semiconductor (CMOS)-compatibility of photonic devices to reduce the materials diversity eventually to integrate on Si chips. Fractal optical H-trees have been implemented on a chip and found to be a technology breakthrough beyond metal interconnection. It has shown that large RC time constants associated with metal can be eliminated at least long distant data communication on a chip, and eventually improve yield and power issues. This has become the world's first electronic and photonic integrated circuits (EPICs) and the possibility of at least 10 GHz clocking for personal computers has been demonstrated

Data reading with the aid of one-photon and two-photon luminescence in three-dimensional optical memory devices based on photochromic materials

International Nuclear Information System (INIS)

Akimov, Denis A; Zheltikov, Aleksei M; Koroteev, Nikolai I; Naumov, A N; Fedotov, Andrei B; Magnitskiy, Sergey A; Sidorov-Biryukov, D A; Sokolyuk, N T

1998-01-01

The problem of nondestructive reading of the data stored in the interior of a photochromic sample was analysed. A comparison was made of the feasibility of reading based on one-photon and two-photon luminescence. A model was proposed for the processes of reading the data stored in photochromic molecules with the aid of one-photon and two-photon luminescence. In addition to photochromic transitions, account was taken of the transfer of populations between optically coupled transitions in molecules under the action of the exciting radiation. This model provided a satisfactory description of the kinetics of decay of the coloured form of bulk samples of spiropyran and made it possible to determine experimentally the quantum yield of the reverse photoreaction as well as the two-photon absorption cross section of the coloured form. Measurements were made of the characteristic erasure times of the data stored in a photochromic medium under one-photon and two-photon luminescence reading conditions. It was found that the use of two-photon luminescence made it possible to enhance considerably the contrast and localisation of the optical data reading scheme in three-dimensional optical memory devices. The experimental results were used to estimate the two-photon absorption cross section of the coloured form of a sample of indoline spiropyran in a polymethyl methacrylate matrix. (laser applications and other topics in quantum electronics)

40-Gb/s all-optical processing systems using hybrid photonic integration technology

DEFF Research Database (Denmark)

Kehayas, E.; Tsiokos, D.I.; Bakopoulos, P.

2006-01-01

the potential that all-optical technology can find application in future data-centric networks with efficient and dynamic bandwidth utilization. This paper also reports on the latest photonic integration breakthroughs as a potential migration path for reducing fabrication cost by developing photonic systems...

Strained Silicon Photonics

Directory of Open Access Journals (Sweden)

Ralf B. Wehrspohn

2012-05-01

Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

DEFF Research Database (Denmark)

Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

2017-01-01

is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

Roadmap for integration of InP based photonics and silicon electronics

NARCIS (Netherlands)

Williams, K.A.

2015-01-01

We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

Analysis of ultra-high sensitivity configuration in chip-integrated photonic crystal microcavity bio-sensors

Energy Technology Data Exchange (ETDEWEB)

Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com; Hosseini, Amir; Xu, Xiaochuan [Omega Optics, Inc., Austin, Texas 78757 (United States); Zhu, Liang; Zou, Yi [Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758 (United States); Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Omega Optics, Inc., Austin, Texas 78757 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758 (United States)

2014-05-12

We analyze the contributions of quality factor, fill fraction, and group index of chip-integrated resonance microcavity devices, to the detection limit for bulk chemical sensing and the minimum detectable biomolecule concentration in biosensing. We analyze the contributions from analyte absorbance, as well as from temperature and spectral noise. Slow light in two-dimensional photonic crystals provide opportunities for significant reduction of the detection limit below 1 × 10{sup −7} RIU (refractive index unit) which can enable highly sensitive sensors in diverse application areas. We demonstrate experimentally detected concentration of 1 fM (67 fg/ml) for the binding between biotin and avidin, the lowest reported till date.

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-03-01

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

Luneburg lens in silicon photonics.

Science.gov (United States)

Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

2011-03-14

The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

Silicon Photonics Integrated Circuits for 5th Generation mm-Wave Wireless Communications

DEFF Research Database (Denmark)

Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

Hybrid photonic-wireless transmission schemes in the mm-wave frequency are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applicability...

Integrated InP frequency discriminator for Phase-modulated microwave photonic links.

Science.gov (United States)

Fandiño, J S; Doménech, J D; Muñoz, P; Capmany, J

2013-02-11

We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the first to include the optical detectors. The discriminator, designed as a linear filter in intensity, features preliminary SFDR values the range between 67 and 79 dB.Hz(2/3) for signal frequencies in the range of 5-9 GHz limited, in principle, by the high value of the optical losses arising from the use of several free space coupling devices in our experimental setup. As discussed, these losses can be readily reduced by the use of integrated spot-size converters improving the SFDR by 17.3 dB (84-96 dB.Hz(2/3)). Further increase up to a range of (104-116 dB.Hz(2/3)) is possible by reducing the system noise eliminating the EDFA employed in the setup and using a commercially available laser source providing higher output power and lower relative intensity noise. Other paths for improvement requiring a filter redesign to be linear in the optical field are also discussed.

The first photon shutter development for APS insertion device beamline front ends

International Nuclear Information System (INIS)

Shu, Deming; Nian, H.L.T.; Wang, Zhibi; Collins, J.T.; Ryding, D.G.; Kuzay, T.M.

1992-01-01

One of the most critical components on the Advanced Photon Source (APS) insertion device (ID) beamline front ends is the first photon shutter. It operates in two modes to fully intercept the high total power and high-heat flux ID photon beam in seconds (normal mode) or in less than 100 ms (emergency fast mode). It is designed to operate in ultra high vacuum (UHV). The design incorporates a multi-channel rectangular bar, bent in a ''hockey stick'' configuration, with two-point suspension. The flanged end is an articulated bellows with rolling hinges. The actuation end is a spring-assisted, pneumatic fail-safe flexural pivot type. The coolant (water) channels incorporate brazed copper foam to enhance the heat transfer, a tube technology particular to the APS. The design development, and material aspects, as well as the extensive thermal and vibrational analyses in support of the design, are presented in this paper

Development of a multitechnology FPGA: a reconfigurable architecture for photonic information processing

Science.gov (United States)

Mal, Prosenjit; Toshniwal, Kavita; Hawk, Chris; Bhadri, Prashant R.; Beyette, Fred R., Jr.

2004-06-01

Over the years, Field Programmable Gate Arrays (FPGAs) have made a profound impact on the electronics industry with rapidly improving semiconductor-manufacturing technology ranging from sub-micron to deep sub-micron processes and equally innovative CAD tools. Though FPGA has revolutionized programmable/reconfigurable digital logic technology, one limitation of current FPGA"s is that the user is limited to strictly electronic designs. Thus, they are not suitable for applications that are not purely electronic, such as optical communications, photonic information processing systems and other multi-technology applications (ex. analog devices, MEMS devices and microwave components). Over recent years, the growing trend has been towards the incorporation of non-traditional device technologies into traditional CMOS VLSI systems. The integration of these technologies requires a new kind of FPGA that can merge conventional FPGA technology with photonic and other multi-technology devices. The proposed new class of field programmable device will extend the flexibility, rapid prototyping and reusability benefits associated with conventional electronic into photonic and multi-technology domain and give rise to the development of a wider class of programmable and embedded integrated systems. This new technology will create a tremendous opportunity for applying the conventional programmable/reconfigurable hardware concepts in other disciplines like photonic information processing. To substantiate this novel architectural concept, we have fabricated proof-of-the-concept CMOS VLSI Multi-technology FPGA (MT-FPGA) chips that include both digital field programmable logic blocks and threshold programmable photoreceivers which are suitable for sensing optical signals. Results from these chips strongly support the feasibility of this new optoelectronic device concept.

Al transmon qubits on silicon-on-insulator for quantum device integration

Science.gov (United States)

Keller, Andrew J.; Dieterle, Paul B.; Fang, Michael; Berger, Brett; Fink, Johannes M.; Painter, Oskar

2017-07-01

We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T2* = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.

Improving Light Extraction of Organic Light-Emitting Devices by Attaching Nanostructures with Self-Assembled Photonic Crystal Patterns

Directory of Open Access Journals (Sweden)

Kai-Yu Peng

2014-01-01

Full Text Available A single-monolayered hexagonal self-assembled photonic crystal (PC pattern fabricated onto polyethylene terephthalate (PET films by using simple nanosphere lithography (NSL method has been demonstrated in this research work. The patterned nanostructures acted as a scattering medium to extract the trapped photons from substrate mode of optical-electronic device for improving the overall external quantum efficiency of the organic light-emitting diodes (OLEDs. With an optimum latex concentration, the distribution of self-assembled polystyrene (PS nanosphere patterns on PET films can be easily controlled by adjusting the rotation speed of spin-coater. After attaching the PS nanosphere array brightness enhancement film (BEF sheet as a photonic crystal pattern onto the device, the luminous intensity of OLEDs in the normal viewing direction is 161% higher than the one without any BEF attachment. The electroluminescent (EL spectrum of OLEDs with PS patterned BEF attachment also showed minor color offset and superior color stabilization characteristics, and thus it possessed the potential applications in all kinds of display technology and solid-state optical-electronic devices.

Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

Energy Technology Data Exchange (ETDEWEB)

Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)

2014-11-17

We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

Photonic crystal waveguides in PECVD glass

DEFF Research Database (Denmark)

Liu, Haoling; Frandsen, Lars Hagedorn; Têtu, Amélie

Silicon oxynitride (SiON) on silicon has found wide use as a robust and versatileplatform for integrated, optical devices. With plasma-enhanced chemical vapourdeposition (PECVD) the refractive index can be varied all the way from 1.5 (pure silica,SiO2) to 2.0 (pure silicon nitride, Si3N4). We have...... fabricated glasses with refractive indexup to approximately 1.75, with which value it is possible to fabricate photonic crystalwaveguides. These structures have the advantage of being transparent in the whole of thevisible region, which makes them different from photonic crystals made...

Photonic Mach-Zehnder modulators driven by surface acoustic waves in AlGaAs technology

Science.gov (United States)

Crespo-Poveda, A.; Gargallo, B.; Artundo, I.; Doménech, J. D.; Muñoz, P.; Hey, R.; Biermann, K.; Tahraoui, A.; Santos, P. V.; Cantarero, A.; de Lima, M. M.

2014-03-01

In this paper, photonic devices driven by surface acoustic waves and operating in the GHz frequency range are presented. The devices were designed and fabricated in (Al,Ga)As technology. In contrast to previously realized modulators, where part of the light transmission is lost due to destructive interference, in the present devices light only switches paths, avoiding losses. One of the devices presents two output channels with 180°-dephasing synchronization. Odd multiples of the fundamental driving frequency are enabled by adjusting the applied acoustic power. A second and more complex photonic integrated device, based on the acoustic modulation of tunable Arrayed Waveguide Gratings, is also proposed.

New design for photonic temporal integration with combined high processing speed and long operation time window.

Science.gov (United States)

Asghari, Mohammad H; Park, Yongwoo; Azaña, José

2011-01-17

We propose and experimentally prove a novel design for implementing photonic temporal integrators simultaneously offering a high processing bandwidth and a long operation time window, namely a large time-bandwidth product. The proposed scheme is based on concatenating in series a time-limited ultrafast photonic temporal integrator, e.g. implemented using a fiber Bragg grating (FBG), with a discrete-time (bandwidth limited) optical integrator, e.g. implemented using an optical resonant cavity. This design combines the advantages of these two previously demonstrated photonic integrator solutions, providing a processing speed as high as that of the time-limited ultrafast integrator and an operation time window fixed by the discrete-time integrator. Proof-of-concept experiments are reported using a uniform fiber Bragg grating (as the original time-limited integrator) connected in series with a bulk-optics coherent interferometers' system (as a passive 4-points discrete-time photonic temporal integrator). Using this setup, we demonstrate accurate temporal integration of complex-field optical signals with time-features as fast as ~6 ps, only limited by the processing bandwidth of the FBG integrator, over time durations as long as ~200 ps, which represents a 4-fold improvement over the operation time window (~50 ps) of the original FBG integrator.

Single Photon Sources in Silicon Carbide

International Nuclear Information System (INIS)

Brett Johnson

2014-01-01

Single photon sources in semiconductors are highly sought after as they constitute the building blocks of a diverse range of emerging technologies such as integrated quantum information processing, quantum metrology and quantum photonics. In this presentation, we show the first observation of single photon emission from deep level defects in silicon carbide (SiC). The single photon emission is photo-stable at room temperature and surprisingly bright. This represents an exciting alternative to diamond color centers since SiC possesses well-established growth and device engineering protocols. The defect is assigned to the carbon vacancy-antisite pair which gives rise to the AB photoluminescence lines. We discuss its photo-physical properties and their fabrication via electron irradiation. Preliminary measurements on 3C SiC nano-structures will also be discussed. (author)

Topology Optimization of Building Blocks for Photonic Integrated Circuits

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard; Sigmund, Ole

2005-01-01

Photonic integrated circuits are likely candidates as high speed replacements for the standard electrical integrated circuits of today. However, in order to obtain a satisfactorily performance many design prob- lems that up until now have resulted in too high losses must be resolved. In this work...... we demonstrate how the method of topology optimization can be used to design a variety of high performance building blocks for the future circuits....

N-dimensional integrability from two-photon coalgebra symmetry

International Nuclear Information System (INIS)

Ballesteros, Angel; Blasco, Alfonso; Herranz, Francisco J

2009-01-01

A wide class of Hamiltonian systems with N degrees of freedom and endowed with, at least, (N - 2) functionally independent integrals of motion in involution is constructed by making use of the two-photon Lie-Poisson coalgebra (h 6 , Δ). The set of (N - 2) constants of the motion is shown to be a universal one for all these Hamiltonians, irrespective of the dependence of the latter on several arbitrary functions and N free parameters. Within this large class of quasi-integrable N-dimensional Hamiltonians, new families of completely integrable systems are identified by finding explicitly a new independent integral I through the analysis of the sub-coalgebra structure of h 6 . In particular, new completely integrable N-dimensional Hamiltonians describing natural systems, geodesic flows and static electromagnetic Hamiltonians are presented

An integrated single- and two-photon non-diffracting light-sheet microscope

Science.gov (United States)

Lau, Sze Cheung; Chiu, Hoi Chun; Zhao, Luwei; Zhao, Teng; Loy, M. M. T.; Du, Shengwang

2018-04-01

We describe a fluorescence optical microscope with both single-photon and two-photon non-diffracting light-sheet excitations for large volume imaging. With a special design to accommodate two different wavelength ranges (visible: 400-700 nm and near infrared: 800-1200 nm), we combine the line-Bessel sheet (LBS, for single-photon excitation) and the scanning Bessel beam (SBB, for two-photon excitation) light sheet together in a single microscope setup. For a transparent thin sample where the scattering can be ignored, the LBS single-photon excitation is the optimal imaging solution. When the light scattering becomes significant for a deep-cell or deep-tissue imaging, we use SBB light-sheet two-photon excitation with a longer wavelength. We achieved nearly identical lateral/axial resolution of about 350/270 nm for both imagings. This integrated light-sheet microscope may have a wide application for live-cell and live-tissue three-dimensional high-speed imaging.

Quantification of the Impact of Photon Distinguishability on Measurement-Device- Independent Quantum Key Distribution

Directory of Open Access Journals (Sweden)

Garrett K. Simon

2018-04-01

Full Text Available Measurement-Device-Independent Quantum Key Distribution (MDI-QKD is a two-photon protocol devised to eliminate eavesdropping attacks that interrogate or control the detector in realized quantum key distribution systems. In MDI-QKD, the measurements are carried out by an untrusted third party, and the measurement results are announced openly. Knowledge or control of the measurement results gives the third party no information about the secret key. Error-free implementation of the MDI-QKD protocol requires the crypto-communicating parties, Alice and Bob, to independently prepare and transmit single photons that are physically indistinguishable, with the possible exception of their polarization states. In this paper, we apply the formalism of quantum optics and Monte Carlo simulations to quantify the impact of small errors in wavelength, bandwidth, polarization and timing between Alice’s photons and Bob’s photons on the MDI-QKD quantum bit error rate (QBER. Using published single-photon source characteristics from two-photon interference experiments as a test case, our simulations predict that the finite tolerances of these sources contribute ( 4.04 ± 20 / N sifted % to the QBER in an MDI-QKD implementation generating an N sifted -bit sifted key.

Photolithography of thick photoresist coating for electrically controlled liquid crystal photonic bandgap fibre devices

DEFF Research Database (Denmark)

Wei, Lei; Khomtchenko, Elena; Alkeskjold, Thomas Tanggaard

2009-01-01

Thick photoresist coating for electrode patterning in an anisotropically etched V-groove is investigated for electrically controlled liquid crystal photonic bandgap fibre devices. The photoresist step coverage at the convex corners is compared with and without soft baking after photoresist spin...

Label-free silicon photonic biosensor system with integrated detector array

Science.gov (United States)

Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

2010-01-01

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

Label-free silicon photonic biosensor system with integrated detector array.

Science.gov (United States)

Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

2009-08-07

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

Integrated Magneto-Optical Devices for On-Chip Photonic Systems

Science.gov (United States)

2017-09-01

Technology SEPTEMBER 2017 Final Report Approved for public release; distribution is unlimited. See additional restrictions described on inside pages STINFO...PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER Massachusetts Institute of Technology 77 Massachusetts Avenue...interferometer (MZI) isolator devices based on optical modeling, for both transverse- electric (TE) and transverse-magnetic (TM) polarization. 15. SUBJECT TERMS

Site-controlled InGaN/GaN single-photon-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Multidimensional quantum entanglement with large-scale integrated optics

DEFF Research Database (Denmark)

Wang, Jianwei; Paesani, Stefano; Ding, Yunhong

2018-01-01

-dimensional entanglement. A programmable bipartite entangled system is realized with dimension up to 15 × 15 on a large-scale silicon-photonics quantum circuit. The device integrates more than 550 photonic components on a single chip, including 16 identical photon-pair sources. We verify the high precision, generality......The ability to control multidimensional quantum systems is key for the investigation of fundamental science and for the development of advanced quantum technologies. We demonstrate a multidimensional integrated quantum photonic platform able to generate, control and analyze high...

Highly localized distributed Brillouin scattering response in a photonic integrated circuit

Science.gov (United States)

Zarifi, Atiyeh; Stiller, Birgit; Merklein, Moritz; Li, Neuton; Vu, Khu; Choi, Duk-Yong; Ma, Pan; Madden, Stephen J.; Eggleton, Benjamin J.

2018-03-01

The interaction of optical and acoustic waves via stimulated Brillouin scattering (SBS) has recently reached on-chip platforms, which has opened new fields of applications ranging from integrated microwave photonics and on-chip narrow-linewidth lasers, to phonon-based optical delay and signal processing schemes. Since SBS is an effect that scales exponentially with interaction length, on-chip implementation on a short length scale is challenging, requiring carefully designed waveguides with optimized opto-acoustic overlap. In this work, we use the principle of Brillouin optical correlation domain analysis to locally measure the SBS spectrum with high spatial resolution of 800 μm and perform a distributed measurement of the Brillouin spectrum along a spiral waveguide in a photonic integrated circuit. This approach gives access to local opto-acoustic properties of the waveguides, including the Brillouin frequency shift and linewidth, essential information for the further development of high quality photonic-phononic waveguides for SBS applications.

Highly localized distributed Brillouin scattering response in a photonic integrated circuit

Directory of Open Access Journals (Sweden)

Atiyeh Zarifi

2018-03-01

Full Text Available The interaction of optical and acoustic waves via stimulated Brillouin scattering (SBS has recently reached on-chip platforms, which has opened new fields of applications ranging from integrated microwave photonics and on-chip narrow-linewidth lasers, to phonon-based optical delay and signal processing schemes. Since SBS is an effect that scales exponentially with interaction length, on-chip implementation on a short length scale is challenging, requiring carefully designed waveguides with optimized opto-acoustic overlap. In this work, we use the principle of Brillouin optical correlation domain analysis to locally measure the SBS spectrum with high spatial resolution of 800 μm and perform a distributed measurement of the Brillouin spectrum along a spiral waveguide in a photonic integrated circuit. This approach gives access to local opto-acoustic properties of the waveguides, including the Brillouin frequency shift and linewidth, essential information for the further development of high quality photonic-phononic waveguides for SBS applications.

Integrated circuit authentication using photon-limited x-ray microscopy.

Science.gov (United States)

Markman, Adam; Javidi, Bahram

2016-07-15

A counterfeit integrated circuit (IC) may contain subtle changes to its circuit configuration. These changes may be observed when imaged using an x-ray; however, the energy from the x-ray can potentially damage the IC. We have investigated a technique to authenticate ICs under photon-limited x-ray imaging. We modeled an x-ray image with lower energy by generating a photon-limited image from a real x-ray image using a weighted photon-counting method. We performed feature extraction on the image using the speeded-up robust features (SURF) algorithm. We then authenticated the IC by comparing the SURF features to a database of SURF features from authentic and counterfeit ICs. Our experimental results with real and counterfeit ICs using an x-ray microscope demonstrate that we can correctly authenticate an IC image captured using orders of magnitude lower energy x-rays. To the best of our knowledge, this Letter is the first one on using a photon-counting x-ray imaging model and relevant algorithms to authenticate ICs to prevent potential damage.

An integrated microcombustor and photonic crystal emitter for thermophotovoltaics

Science.gov (United States)

Chan, Walker R.; Stelmakh, Veronika; Allmon, William R.; Waits, Christopher M.; Soljacic, Marin; Joannopoulos, John D.; Celanovic, Ivan

2016-11-01

Thermophotovoltaic (TPV) energy conversion is appealing for portable millimeter- scale generators because of its simplicity, but it relies on a high temperatures. The performance and reliability of the high-temperature components, a microcombustor and a photonic crystal emitter, has proven challenging because they are subjected to 1000-1200°C and stresses arising from thermal expansion mismatches. In this paper, we adopt the industrial process of diffusion brazing to fabricate an integrated microcombustor and photonic crystal by bonding stacked metal layers. Diffusion brazing is simpler and faster than previous approaches of silicon MEMS and welded metal, and the end result is more robust.

Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

Science.gov (United States)

Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

2015-04-06

Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

Integrated liquid-core optical fibers for ultra-efficient nonlinear liquid photonics.

Science.gov (United States)

Kieu, K; Schneebeli, L; Norwood, R A; Peyghambarian, N

2012-03-26

We have developed a novel integrated platform for liquid photonics based on liquid core optical fiber (LCOF). The platform is created by fusion splicing liquid core optical fiber to standard single-mode optical fiber making it fully integrated and practical - a major challenge that has greatly hindered progress in liquid-photonic applications. As an example, we report here the realization of ultralow threshold Raman generation using an integrated CS₂ filled LCOF pumped with sub-nanosecond pulses at 532 nm and 1064 nm. The measured energy threshold for the Stokes generation is 1nJ, about three orders of magnitude lower than previously reported values in the literature for hydrogen gas, a popular Raman medium. The integrated LCOF platform opens up new possibilities for ultralow power nonlinear optics such as efficient white light generation for displays, mid-IR generation, slow light generation, parametric amplification, all-optical switching and wavelength conversion using liquids that have orders of magnitude larger optical nonlinearities compared with silica glass.

A study of pile-up in integrated time-correlated single photon counting systems.

Science.gov (United States)

Arlt, Jochen; Tyndall, David; Rae, Bruce R; Li, David D-U; Richardson, Justin A; Henderson, Robert K

2013-10-01

Recent demonstration of highly integrated, solid-state, time-correlated single photon counting (TCSPC) systems in CMOS technology is set to provide significant increases in performance over existing bulky, expensive hardware. Arrays of single photon single photon avalanche diode (SPAD) detectors, timing channels, and signal processing can be integrated on a single silicon chip with a degree of parallelism and computational speed that is unattainable by discrete photomultiplier tube and photon counting card solutions. New multi-channel, multi-detector TCSPC sensor architectures with greatly enhanced throughput due to minimal detector transit (dead) time or timing channel dead time are now feasible. In this paper, we study the potential for future integrated, solid-state TCSPC sensors to exceed the photon pile-up limit through analytic formula and simulation. The results are validated using a 10% fill factor SPAD array and an 8-channel, 52 ps resolution time-to-digital conversion architecture with embedded lifetime estimation. It is demonstrated that pile-up insensitive acquisition is attainable at greater than 10 times the pulse repetition rate providing over 60 dB of extended dynamic range to the TCSPC technique. Our results predict future CMOS TCSPC sensors capable of live-cell transient observations in confocal scanning microscopy, improved resolution of near-infrared optical tomography systems, and fluorescence lifetime activated cell sorting.

Qubit entanglement between ring-resonator photon-pair sources on a silicon chip

Science.gov (United States)

Silverstone, J. W.; Santagati, R.; Bonneau, D.; Strain, M. J.; Sorel, M.; O'Brien, J. L.; Thompson, M. G.

2015-01-01

Entanglement—one of the most delicate phenomena in nature—is an essential resource for quantum information applications. Scalable photonic quantum devices must generate and control qubit entanglement on-chip, where quantum information is naturally encoded in photon path. Here we report a silicon photonic chip that uses resonant-enhanced photon-pair sources, spectral demultiplexers and reconfigurable optics to generate a path-entangled two-qubit state and analyse its entanglement. We show that ring-resonator-based spontaneous four-wave mixing photon-pair sources can be made highly indistinguishable and that their spectral correlations are small. We use on-chip frequency demultiplexers and reconfigurable optics to perform both quantum state tomography and the strict Bell-CHSH test, both of which confirm a high level of on-chip entanglement. This work demonstrates the integration of high-performance components that will be essential for building quantum devices and systems to harness photonic entanglement on the large scale. PMID:26245267

Reconfigurable topological photonic crystal

Science.gov (United States)

Shalaev, Mikhail I.; Desnavi, Sameerah; Walasik, Wiktor; Litchinitser, Natalia M.

2018-02-01

Topological insulators are materials that conduct on the surface and insulate in their interior due to non-trivial topology of the band structure. The edge states on the interface between topological (non-trivial) and conventional (trivial) insulators are topologically protected from scattering due to structural defects and disorders. Recently, it was shown that photonic crystals (PCs) can serve as a platform for realizing a scatter-free propagation of light waves. In conventional PCs, imperfections, structural disorders, and surface roughness lead to significant losses. The breakthrough in overcoming these problems is likely to come from the synergy of the topological PCs and silicon-based photonics technology that enables high integration density, lossless propagation, and immunity to fabrication imperfections. For many applications, reconfigurability and capability to control the propagation of these non-trivial photonic edge states is essential. One way to facilitate such dynamic control is to use liquid crystals (LCs), which allow to modify the refractive index with external electric field. Here, we demonstrate dynamic control of topological edge states by modifying the refractive index of a LC background medium. Background index is changed depending on the orientation of a LC, while preserving the topology of the system. This results in a change of the spectral position of the photonic bandgap and the topological edge states. The proposed concept might be implemented using conventional semiconductor technology, and can be used for robust energy transport in integrated photonic devices, all-optical circuity, and optical communication systems.

Demonstration of glass-based photonic interposer for mid-board-optical engines and electrical-optical circuit board (EOCB) integration strategy

Science.gov (United States)

Schröder, H.; Neitz, M.; Schneider-Ramelow, M.

2018-02-01

Due to its optical transparency and superior dielectric properties glass is regarded as a promising candidate for advanced applications as active photonic interposer for mid-board-optics and optical PCB waveguide integration. The concepts for multi-mode and single-mode photonic system integration are discussed and related demonstration project results will be presented. A hybrid integrated photonic glass body interposer with integrated optical lenses for multi-mode data communication wavelength of 850 nm have been realized. The paper summarizes process developments which allow cost efficient metallization of TGV. Electro-optical elements like photodiodes and VCSELs can be directly flip-chip mounted on the glass substrate according to the desired lens positions. Furthermore results for a silicon photonic based single-mode active interposer integration onto a single mode glass made EOCB will be compared in terms of packaging challenges. The board level integration strategy for both of these technological approaches and general next generation board level integration concepts for photonic interposer will be introductorily discussed.

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

Science.gov (United States)

Chiles, Jeff; Nader, Nima; Hickstein, Daniel D.; Yu, Su Peng; Briles, Travis Crain; Carlson, David; Jung, Hojoong; Shainline, Jeffrey M.; Diddams, Scott; Papp, Scott B.; Nam, Sae Woo; Mirin, Richard P.

2018-04-01

We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\\times 10^6 $ at 1552 nm, and $>1.2\\times 10^6$ throughout $\\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

Science.gov (United States)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

Bi-dimensional arrays of SPAD for time-resolved single photon imaging

International Nuclear Information System (INIS)

Tudisco, S.; Lanzano, L.; Musumeci, F.; Neri, L.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

2009-01-01

Many scientific areas like astronomy, biophysics, biomedicine, nuclear and plasma science, etc. are interested in the development of a new time-resolved single photon imaging device. Such a device represents today one of the most challenging goals in the field of photonics. In collaboration with Catania R and D staff of ST-Microelectronics (STM) we created, during the last few years, a new avalanche photosensor-Single Photon Avalanche Diode (SPAD) able to detect and count, with excellent performance, single photons. Further we will discuss the possible realization of a single photon imaging device through the many elements integration (bi-dimensional arrays) of SPADs. In order to achieve the goal, it is also important to develop an appropriate readout strategy able to address the time information of each individual sensor and in order to read a great number of elements easily. First prototypes were designed and manufactured by STM and the results are reported here. In the paper we will discuss in particular: (i) sensor performance (gain, photodetection efficiency, timing, after-pulsing, etc.); (ii) array performance (layout, cross-talk, etc.); (iii) readout strategy (quenching, electronics), and (iv) first imaging results (general performance).

Integrated bio-photonics to revolutionize health care enabled through PIX4life and PIXAPP

Science.gov (United States)

Jans, Hilde; O'Brien, Peter; Artundo, Iñigo; Porcel, Marco A. G.; Hoofman, Romano; Geuzebroek, Douwe; Dumon, Pieter; van der Vliet, Marcel; Witzens, Jeremy; Bourguignon, Eric; Van Dorpe, Pol; Lagae, Liesbet

2018-02-01

Photonics has become critical to life sciences. However, the field is far from benefiting fully from photonics' capabilities. Today, bulky and expensive optical systems dominate biomedical photonics, even though robust optical functionality can be realized cost-effectively on single photonic integrated circuits (PICs). Such chips are commercially available mostly for telecom applications, and at infrared wavelengths. Although proof-of-concept demonstrations for PICs in life sciences, using visible wavelengths are abundant, the gating factor for wider adoption is limited in resource capacity. Two European pilot lines, PIX4life and PIXAPP, were established to facilitate European R and D in biophotonics, by helping European companies and universities bridge the gap between research and industrial development. Through creation of an open-access model, PIX4life aims to lower barriers to entry for prototyping and validating biophotonics concepts for larger scale production. In addition, PIXAPP enables the assembly and packaging of photonic integrated circuits.

Photonics: Technology project summary

Science.gov (United States)

Depaula, Ramon P.

1991-01-01

Photonics involves the use of light (photons) in conjunction with electronics for applications in communications, computing, control, and sensing. Components used in photonic systems include lasers, optical detectors, optical wave guide devices, fiber optics, and traditional electronic devices. The goal of this program is to develop hybrid optoelectronic devices and systems for sensing, information processing, communications, and control. It is hoped that these new devices will yield at least an order of magnitude improvement in performance over existing technology. The objective of the program is to conduct research and development in the following areas: (1) materials and devices; (2) networking and computing; (3) optical processing/advanced pattern recognition; and (4) sensing.

Dark and bright modes manipulation for plasmon-triggered photonic devices

KAUST Repository

Panaro, S.

2014-09-10

In the last decade, several efforts have been spent in the study of near-field coupled systems, in order to induce hybridization of plasmonic modes. Within this context, particular attention has been recently paid on the possibility to couple conventional bright and dark modes. As a result of such phenomenon, a Fano resonance appears as a characteristic sharp dip in the scattering spectra. Here we show how, gradually coupling a single rod-like nanostructure to an aligned nanoantenna dimer, it is possible to induce the near-field activation of an anti-bonding dark mode. The high polarization sensitivity presented by the far-field response of T-shape trimer, combined with the sharp Fano resonance sustained by this plasmonic device, opens interesting perspectives towards a new era of photonic devices. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Dark and bright modes manipulation for plasmon-triggered photonic devices

KAUST Repository

Panaro, S.; Nazir, A.; Liberale, Carlo; Wang, H.; De Angelis, F.; Proietti Zaccaria, R.; Di Fabrizio, Enzo M.; Toma, A.

2014-01-01

In the last decade, several efforts have been spent in the study of near-field coupled systems, in order to induce hybridization of plasmonic modes. Within this context, particular attention has been recently paid on the possibility to couple conventional bright and dark modes. As a result of such phenomenon, a Fano resonance appears as a characteristic sharp dip in the scattering spectra. Here we show how, gradually coupling a single rod-like nanostructure to an aligned nanoantenna dimer, it is possible to induce the near-field activation of an anti-bonding dark mode. The high polarization sensitivity presented by the far-field response of T-shape trimer, combined with the sharp Fano resonance sustained by this plasmonic device, opens interesting perspectives towards a new era of photonic devices. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

1.25  GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit.

Science.gov (United States)

Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

2017-12-15

InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15  mm×15  mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

An ultrahigh-accuracy Miniature Dew Point Sensor based on an Integrated Photonics Platform

Science.gov (United States)

Tao, Jifang; Luo, Yu; Wang, Li; Cai, Hong; Sun, Tao; Song, Junfeng; Liu, Hui; Gu, Yuandong

2016-07-01

The dew point is the temperature at which vapour begins to condense out of the gaseous phase. The deterministic relationship between the dew point and humidity is the basis for the industry-standard “chilled-mirror” dew point hygrometers used for highly accurate humidity measurements, which are essential for a broad range of industrial and metrological applications. However, these instruments have several limitations, such as high cost, large size and slow response. In this report, we demonstrate a compact, integrated photonic dew point sensor (DPS) that features high accuracy, a small footprint, and fast response. The fundamental component of this DPS is a partially exposed photonic micro-ring resonator, which serves two functions simultaneously: 1) sensing the condensed water droplets via evanescent fields and 2) functioning as a highly accurate, in situ temperature sensor based on the thermo-optic effect (TOE). This device virtually eliminates most of the temperature-related errors that affect conventional “chilled-mirror” hygrometers. Moreover, this DPS outperforms conventional “chilled-mirror” hygrometers with respect to size, cost and response time, paving the way for on-chip dew point detection and extension to applications for which the conventional technology is unsuitable because of size, cost, and other constraints.

Photonics

CERN Document Server

Andrews, David L

2015-01-01

Discusses the basic physical principles underlying the technology instrumentation of photonics This volume discusses photonics technology and instrumentation. The topics discussed in this volume are: Communication Networks; Data Buffers; Defense and Security Applications; Detectors; Fiber Optics and Amplifiers; Green Photonics; Instrumentation and Metrology; Interferometers; Light-Harvesting Materials; Logic Devices; Optical Communications; Remote Sensing; Solar Energy; Solid-State Lighting; Wavelength Conversion Comprehensive and accessible coverage of the whole of modern photonics Emphas

Photon technology. Hard photon technology; Photon technology. Hard photon gijutsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

For the application of photon to industrial technologies, in particular, a hard photon technology was surveyed which uses photon beams of 0.1-200nm in wavelength. Its features such as selective atom reaction, dense inner shell excitation and spacial high resolution by quantum energy are expected to provide innovative techniques for various field such as fine machining, material synthesis and advanced inspection technology. This wavelength region has been hardly utilized for industrial fields because of poor development of suitable photon sources and optical devices. The developmental meaning, usable time and issue of a hard photon reduction lithography were surveyed as lithography in ultra-fine region below 0.1{mu}m. On hard photon analysis/evaluation technology, the industrial use of analysis, measurement and evaluation technologies by micro-beam was viewed, and optimum photon sources and optical systems were surveyed. Prediction of surface and surface layer modification by inner shell excitation, the future trend of this process and development of a vacuum ultraviolet light source were also surveyed. 383 refs., 153 figs., 17 tabs.

Recent progress in organic electronics and photonics: A perspective on the future of organic devices

KAUST Repository

Bredas, Jean-Luc

2016-01-01

The fields of organic electronics and photonics have witnessed remarkable advances over the past few years. This progress bodes well for the increased utilization of organic materials as the active layers in devices for applications as diverse

Infrared transparent graphene heater for silicon photonic integrated circuits.

Science.gov (United States)

Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

2016-04-18

Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

Optimizing performance of plasmonic devices for photonic circuits

DEFF Research Database (Denmark)

Rosenzveig, Tiberiu; Hermannsson, Pétur Gordon; Boltasseva, Alexandra

2010-01-01

specifications similar to or better than commercially available thermo-optic integrated optical components. Specifically, we have considered the insertion loss, power consumption, footprint, polarization-dependent loss, extinction ratio, and frequency response of the plasmonic devices, in addition to fabrication...

Ring resonator-based on-chip modulation transformer for high-performance phase-modulated microwave photonic links.

Science.gov (United States)

Zhuang, Leimeng; Taddei, Caterina; Hoekman, Marcel; Leinse, Arne; Heideman, René; van Dijk, Paulus; Roeloffzen, Chris

2013-11-04

In this paper, we propose and experimentally demonstrate a novel wideband on-chip photonic modulation transformer for phase-modulated microwave photonic links. The proposed device is able to transform phase-modulated optical signals into intensity-modulated versions (or vice versa) with nearly zero conversion of laser phase noise to intensity noise. It is constructed using waveguide-based ring resonators, which features simple architecture, stable operation, and easy reconfigurability. Beyond the stand-alone functionality, the proposed device can also be integrated with other functional building blocks of photonic integrated circuits (PICs) to create on-chip complex microwave photonic signal processors. As an application example, a PIC consisting of two such modulation transformers and a notch filter has been designed and realized in TriPleX(TM) waveguide technology. The realized device uses a 2 × 2 splitting circuit and 3 ring resonators with a free spectral range of 25 GHz, which are all equipped with continuous tuning elements. The device can perform phase-to-intensity modulation transform and carrier suppression simultaneously, which enables high-performance phase-modulated microwave photonics links (PM-MPLs). Associated with the bias-free and low-complexity advantages of the phase modulators, a single-fiber-span PM-MPL with a RF bandwidth of 12 GHz (3 dB-suppression band 6 to 18 GHz) has been demonstrated comprising the proposed PIC, where the achieved spurious-free dynamic range performance is comparable to that of Class-AB MPLs using low-biased Mach-Zehnder modulators.

Photon energy tunability of advanced photon source undulators

International Nuclear Information System (INIS)

Viccaro, P.J.; Shenoy, G.K.

1987-08-01

At a fixed storage ring energy, the energy of the harmonics of an undulator can be shifted or ''tuned'' by changing the magnet gap of the device. The possible photon energy interval spanned in this way depends on the undulator period, minimum closed gap, minimum acceptable photon intensity and storage ring energy. The minimum magnet gap depends directly on the stay clear particle beam aperture required for storage ring operation. The tunability of undulators planned for the Advanced Photon Source with first harmonic photon energies in the range of 5 to 20 keV are discussed. The results of an analysis used to optimize the APS ring energy is presented and tunability contours and intensity parameters are presented for two typical classes of devices

An integrated microcombustor and photonic crystal emitter for thermophotovoltaics

International Nuclear Information System (INIS)

Chan, Walker R.; Stelmakh, Veronika; Joannopoulos, John D.; Celanovic, Ivan; Allmon, William R.; Waits, Christopher M.; Soljacic, Marin

2016-01-01

Thermophotovoltaic (TPV) energy conversion is appealing for portable millimeter- scale generators because of its simplicity, but it relies on a high temperatures. The performance and reliability of the high-temperature components, a microcombustor and a photonic crystal emitter, has proven challenging because they are subjected to 1000-1200°C and stresses arising from thermal expansion mismatches. In this paper, we adopt the industrial process of diffusion brazing to fabricate an integrated microcombustor and photonic crystal by bonding stacked metal layers. Diffusion brazing is simpler and faster than previous approaches of silicon MEMS and welded metal, and the end result is more robust. (paper)

Latest Advances in the Generation of Single Photons in Silicon Carbide

Directory of Open Access Journals (Sweden)

Albert Boretti

2016-06-01

Full Text Available The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.

Inkjet Printing of Functional Materials for Optical and Photonic Applications

Science.gov (United States)

Alamán, Jorge; Alicante, Raquel; Peña, Jose Ignacio; Sánchez-Somolinos, Carlos

2016-01-01

Inkjet printing, traditionally used in graphics, has been widely investigated as a valuable tool in the preparation of functional surfaces and devices. This review focuses on the use of inkjet printing technology for the manufacturing of different optical elements and photonic devices. The presented overview mainly surveys work done in the fabrication of micro-optical components such as microlenses, waveguides and integrated lasers; the manufacturing of large area light emitting diodes displays, liquid crystal displays and solar cells; as well as the preparation of liquid crystal and colloidal crystal based photonic devices working as lasers or optical sensors. Special emphasis is placed on reviewing the materials employed as well as in the relevance of inkjet in the manufacturing of the different devices showing in each of the revised technologies, main achievements, applications and challenges. PMID:28774032

Inkjet Printing of Functional Materials for Optical and Photonic Applications

Directory of Open Access Journals (Sweden)

Jorge Alamán

2016-11-01

Full Text Available Inkjet printing, traditionally used in graphics, has been widely investigated as a valuable tool in the preparation of functional surfaces and devices. This review focuses on the use of inkjet printing technology for the manufacturing of different optical elements and photonic devices. The presented overview mainly surveys work done in the fabrication of micro-optical components such as microlenses, waveguides and integrated lasers; the manufacturing of large area light emitting diodes displays, liquid crystal displays and solar cells; as well as the preparation of liquid crystal and colloidal crystal based photonic devices working as lasers or optical sensors. Special emphasis is placed on reviewing the materials employed as well as in the relevance of inkjet in the manufacturing of the different devices showing in each of the revised technologies, main achievements, applications and challenges.

Integrated Optical lightguide device

NARCIS (Netherlands)

Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

2005-01-01

In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

Integrated Optical lightguide device

NARCIS (Netherlands)

Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

2000-01-01

In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

Compact high-efficiency vortex beam emitter based on a silicon photonics micro-ring

DEFF Research Database (Denmark)

Li, Shimao; Ding, Yunhong; Guan, Xiaowei

2018-01-01

Photonic integrated devices that emit vortex beam carrying orbital angular momentum are becoming key components for multiple applications. Here we propose and demonstrate a high-efficiency vortex beam emitter based on a silicon micro-ring resonator integrated with a metal mirror. Such a compact...

10 Gb/s operation of photonic crystal silicon optical modulators.

Science.gov (United States)

Nguyen, Hong C; Sakai, Yuya; Shinkawa, Mizuki; Ishikura, Norihiro; Baba, Toshihiko

2011-07-04

We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.

Cross two photon absorption in a silicon photonic crystal waveguide fiber taper coupler with a physical junction

Energy Technology Data Exchange (ETDEWEB)

Sarkissian, Raymond, E-mail: RaymondSark@gmail.com; O' Brien, John [Electrophysics department, University of Southern California, Los Angeles, California 90089 (United States)

2015-01-21

Cross two photon absorption in silicon is characterized using a tapered fiber photonic crystal silicon waveguide coupler. There is a physical junction between the tapered fiber and the waveguide constituting a stand-alone device. This device is used to obtain the spectrum for cross two photon absorption coefficient per unit volume of interaction between photons of nondegenerate energy. The corresponding Kerr coefficient per unit volume of interaction is also experimentally extracted. The thermal resistance of the device is also experimentally determined and the response time of the device is estimated for on-chip all-optical signal processing and data transfer between optical signals of different photon energies.

Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

Science.gov (United States)

Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

2017-12-01

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

GaAs Photonic Integrated Circuit (PIC) development for high performance communications

Energy Technology Data Exchange (ETDEWEB)

Sullivan, C.T.

1998-03-01

Sandia has established a foundational technology in photonic integrated circuits (PICs) based on the (Al,Ga,In)As material system for optical communication, radar control and testing, and network switching applications at the important 1.3{mu}m/1.55{mu}m wavelengths. We investigated the optical, electrooptical, and microwave performance characteristics of the fundamental building-block PIC elements designed to be as simple and process-tolerant as possible, with particular emphasis placed on reducing optical insertion loss. Relatively conventional device array and circuit designs were built using these PIC elements: (1) to establish a baseline performance standard; (2) to assess the impact of epitaxial growth accuracy and uniformity, and of fabrication uniformity and yield; (3) to validate our theoretical and numerical models; and (4) to resolve the optical and microwave packaging issues associated with building fully packaged prototypes. Novel and more complex PIC designs and fabrication processes, viewed as higher payoff but higher risk, were explored in a parallel effort with the intention of meshing those advances into our baseline higher-yield capability as they mature. The application focus targeted the design and fabrication of packaged solitary modulators meeting the requirements of future wideband and high-speed analog and digital data links. Successfully prototyped devices are expected to feed into more complex PICs solving specific problems in high-performance communications, such as optical beamforming networks for phased array antennas.

Superconducting single-photon detectors designed for operation at 1.55-μm telecommunication wavelength

International Nuclear Information System (INIS)

Milostnaya, I; Korneev, A; Rubtsova, I; Seleznev, V; Minaeva, O; Chulkova, G; Okunev, O; Voronov, B; Smirnov, K; Gol'tsman, G; Slysz, W; Wegrzecki, M; Guziewicz, M; Bar, J; Gorska, M; Pearlman, A; Kitaygorsky, J; Cross, A; Sobolewski, Roman

2006-01-01

We report on our progress in development of superconducting single-photon detectors (SSPDs), specifically designed for secure high-speed quantum communications. The SSPDs consist of NbN-based meander nanostructures and operate at liquid helium temperatures. In general, our devices are capable of GHz-rate photon counting in a spectral range from visible light to mid-infrared. The device jitter is 18 ps and dark counts can reach negligibly small levels. The quantum efficiency (QE) of our best SSPDs for visible-light photons approaches a saturation level of ∼30-40%, which is limited by the NbN film absorption. For the infrared range (1.55μm), QE is ∼6% at 4.2 K, but it can be significantly improved by reduction of the operation temperature to the 2-K level, when QE reaches ∼20% for 1.55-μm photons. In order to further enhance the SSPD efficiency at the wavelength of 1.55 μm, we have integrated our detectors with optical cavities, aiming to increase the effective interaction of the photon with the superconducting meander and, therefore, increase the QE. A successful effort was made to fabricate an advanced SSPD structure with an optical microcavity optimized for absorption of 1.55 μm photons. The design consisted of a quarter-wave dielectric layer, combined with a metallic mirror. Early tests performed on relatively low-QE devices integrated with microcavities, showed that the QE value at the resonator maximum (1.55-μm wavelength) was of the factor 3-to-4 higher than that for a nonresonant SSPD. Independently, we have successfully coupled our SSPDs to single-mode optical fibers. The completed receivers, inserted into a liquid-helium transport dewar, reached ∼1% system QE for 1.55 μm photons. The SSPD receivers that are fiber-coupled and, simultaneously, integrated with resonators are expected to be the ultimate photon counters for optical quantum communications

Hierarchically structured photonic crystals for integrated chemical separation and colorimetric detection.

Science.gov (United States)

Fu, Qianqian; Zhu, Biting; Ge, Jianping

2017-02-16

A SiO 2 colloidal photonic crystal film with a hierarchical porous structure is fabricated to demonstrate an integrated separation and colorimetric detection of chemical species for the first time. This new photonic crystal based thin layer chromatography process requires no dyeing, developing and UV irradiation compared to the traditional TLC. The assembling of mesoporous SiO 2 particles via a supersaturation-induced-precipitation process forms uniform and hierarchical photonic crystals with micron-scale cracks and mesopores, which accelerate the diffusion of developers and intensify the adsorption/desorption between the analytes and silica for efficient separation. Meanwhile, the chemical substances infiltrated to the voids of photonic crystals cause an increase of the refractive index and a large contrast of structural colors towards the unloaded part, so that the sample spots can be directly recognized with the naked eye before and after separation.

Simplified nonplanar wafer bonding for heterogeneous device integration

Science.gov (United States)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

On-chip generation of heralded photon-number states

Science.gov (United States)

Vergyris, Panagiotis; Meany, Thomas; Lunghi, Tommaso; Sauder, Gregory; Downes, James; Steel, M. J.; Withford, Michael J.; Alibart, Olivier; Tanzilli, Sébastien

2016-10-01

Beyond the use of genuine monolithic integrated optical platforms, we report here a hybrid strategy enabling on-chip generation of configurable heralded two-photon states. More specifically, we combine two different fabrication techniques, i.e., non-linear waveguides on lithium niobate for efficient photon-pair generation and femtosecond-laser-direct-written waveguides on glass for photon manipulation. Through real-time device manipulation capabilities, a variety of path-coded heralded two-photon states can be produced, ranging from product to entangled states. Those states are engineered with high levels of purity, assessed by fidelities of 99.5 ± 8% and 95.0 ± 8%, respectively, obtained via quantum interferometric measurements. Our strategy therefore stands as a milestone for further exploiting entanglement-based protocols, relying on engineered quantum states, and enabled by scalable and compatible photonic circuits.

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

Science.gov (United States)

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

Compressive sensing in a photonic link with optical integration

DEFF Research Database (Denmark)

Chen, Ying; Yu, Xianbin; Chi, Hao

2014-01-01

In this Letter, we present a novel structure to realize photonics-assisted compressive sensing (CS) with optical integration. In the system, a spectrally sparse signal modulates a multiwavelength continuous-wave light and then is mixed with a random sequence in optical domain. The optical signal......, which is equivalent to the function of integration required in CS. A proof-of-concept experiment with four wavelengths, corresponding to a compression factor of 4, is demonstrated. More simulation results are also given to show the potential of the technique....

Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths

Science.gov (United States)

Cernansky, Robert; Martini, Francesco; Politi, Alberto

2018-02-01

We demonstrate on chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible PECVD Silicon Nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high quality Q-factor of 320,000 resulting in a generation rate of 950,000 $\\frac{pairs}{mW}$. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.

Validation of photon-heating calculations in irradiation reactor with the experimental AMMON program and the CARMEN device

International Nuclear Information System (INIS)

Lemaire, Matthieu

2015-01-01

The temperature in the different core structures of Material-Testing Reactors (MTR) is a key physical parameter for MTRs' performance and safety. In nuclear reactors, where neutron and photon flux are sustained by fission chain reactions, neutrons and photons steadily deposit energy in the structures they cross and lead to a temperature rise in these structures. In non-fissile core structures (such as material samples, experimental devices, control rods, fuel claddings, and so on), the main part of nuclear heating is induced by photon interactions. This photon heating must therefore be well calculated as it is a key input parameter for MTR thermal studies, whose purpose is for instance to help determine the proper sizing of cooling power, electrical heaters and insulation gaps in MTR irradiation devices. The Jules Horowitz Reactor (JHR) is the next international MTR under construction in the south of France at CEA Cadarache research center (French Alternative Energies and Atomic Energy Commission). The JHR will be a major research infrastructure for the test of structural material and fuel behavior under irradiation. It will also produce from 25% to 50% of the European demand of medical radioisotopes for diagnostic purposes. High levels of nuclear heating are expected in the JHR core, with an absorbed-dose rate up to 20 watts per hafnium gram at nominal power (100 MW). Compared to a Pressurized-Water Reactor (PWR), the JHR is made of a specific array of materials (aluminum rack, beryllium reflector, hafnium control rods) and the feedback on photon-heating calculations with these features is limited. It is therefore necessary to validate photon-heating calculation tools (calculation codes and the European nuclear-data JEFF3.1.1 library) for use in the JHR, that is, it is necessary to determine the biases and uncertainties that are relevant for the photon-heating values calculated with these tools in the JHR. This topic constitutes the core of the present

Towards single photon generation using NV centers in diamond coupled to thin layer optical waveguides

International Nuclear Information System (INIS)

Toshiyuki Tashima

2014-01-01

Single photon emitters like the nitrogen-vacancy (NV) center in diamond are important for quantum communication such as quantum cryptography and quantum metrology. In this context, e.g. tapered optical nano-fibers are a promising approach as they allow efficient coupling of single photons into a single spatial mode. Yet, integration of such fibers in a compact integrated quantum circuit is demanding. Here we propose a NV defect center in diamond as a single photon emitter coupled to a thin layer photonic waveguide. The benefit is to allow smaller size devices while having a similar strong evanescent field like tapered nano-optical fibers. We present numerical simulations and fabrication steps of such structures. (author)

Ultracompact multiway beam splitters using multiple coupled photonic crystal waveguides

International Nuclear Information System (INIS)

Yu Tianbao; Zhou Haifeng; Yang Jianyi; Jiang Xiaoqing; Wang Minghua; Gong Zhao

2008-01-01

Ultracompact 1 x N (N > 2) beam splitters based on coupling of multiple photonic crystal waveguides (PCWs) are numerically demonstrated. The operation of the devices is on the basis of the self-imaging phenomenon. Variation of the effective index of modified rods induces the transverse redistribution of the N-fold images with the same coupling length, and uniform or free splitting can be achieved. The devices with three and four output channels are discussed in details as examples. Results show that this kind of beam splitters are very short. At the operating wavelength of 1.55 μm, the splitting length of the devices is only 35 μm even if the output channel number reaches 20. It provides a new method and a compact model to export freely the beam to N channels in PCW devices and can find practical applications in future photonic integrated circuits

Ultracompact multiway beam splitters using multiple coupled photonic crystal waveguides

Energy Technology Data Exchange (ETDEWEB)

Yu Tianbao; Zhou Haifeng; Yang Jianyi; Jiang Xiaoqing; Wang Minghua [Department of Information Science and Electronic Engineering, Zhejiang University, 310027 Hangzhou (China); Gong Zhao [Zhejiang University City College, 310027 Hangzhou (China)

2008-05-07

Ultracompact 1 x N (N > 2) beam splitters based on coupling of multiple photonic crystal waveguides (PCWs) are numerically demonstrated. The operation of the devices is on the basis of the self-imaging phenomenon. Variation of the effective index of modified rods induces the transverse redistribution of the N-fold images with the same coupling length, and uniform or free splitting can be achieved. The devices with three and four output channels are discussed in details as examples. Results show that this kind of beam splitters are very short. At the operating wavelength of 1.55 {mu}m, the splitting length of the devices is only 35 {mu}m even if the output channel number reaches 20. It provides a new method and a compact model to export freely the beam to N channels in PCW devices and can find practical applications in future photonic integrated circuits.

The photonic device for integrated evaluation of collateral circulation of lower extremities in patients with local hypertensive-ischemic pain syndrome

Science.gov (United States)

Pavlov, Volodymyr S.; Bezsmernyi, Yurii O.; Zlepko, Sergey M.; Bezsmertna, Halyna V.

2017-08-01

The given paper analyzes principles of interaction and analysis of the reflected optical radiation from biotissue in the process of assessment of regional hemodynamics state in patients with local hypertensive- ischemic pain syndrome of amputation stumps of lower extremities, applying the method of photoplethysmography. The purpose is the evaluation of Laser photoplethysmography (LPPG) diagnostic value in examination of patients with chronic ischemia of lower extremities. Photonic device is developed to determine the level of the peripheral blood circulation, which determines the basic parameters of peripheral blood circulation and saturation level. Device consists of two sensors: infrared sensor, which contains the infrared laser radiation source and photodetector, and red sensor, which contains the red radiation source and photodetector. LPPG method allows to determined pulsatility of blood flow in different areas of the foot and lower leg, the degree of compensation and conservation perspectives limb. Surgical treatment of local hypertensive -ischemic pain syndrome of amputation stumps of lower extremities by means of semiclosed fasciotomy in combination with revasculating osteotrepanation enabled to improve considerably regional hemodynamics in the tissues of the stump and decrease pain and hypostatic disorders.

Development of an integrated pointing device driver for the disabled.

Science.gov (United States)

Shih, Ching-Hsiang; Shih, Ching-Tien

2010-01-01

To help people with disabilities such as those with spinal cord injury (SCI) to effectively utilise commercial pointing devices to operate computers. This study proposes a novel method to integrate the functions of commercial pointing devices. Utilising software technology to develop an integrated pointing device driver (IPDD) for a computer operating system. The proposed IPDD has the following benefits: (1) it does not require additional hardware cost or circuit preservations, (2) it supports all standard interfaces of commercial pointing devices, including PS/2, USB and wireless interfaces and (3) it can integrate any number of devices. The IPDD can be selected and combined according to their physical restriction. The IPDD is a novel method of integrating commercial pointing devices. Through IPDD, people with disabilities can choose a suitable combination of commercial pointing devices to achieve full cursor control and optimise operational performance. In contrast with previous studies, the software-based solution does not require additional hardware or circuit preservations, and it can support unlimited devices. In summary, the IPDD has the benefits of flexibility, low cost and high-device compatibility.

Athermal and wavelength-trimmable photonic filters based on TiO₂-cladded amorphous-SOI.

Science.gov (United States)

Lipka, Timo; Moldenhauer, Lennart; Müller, Jörg; Trieu, Hoc Khiem

2015-07-27

Large-scale integrated silicon photonic circuits suffer from two inevitable issues that boost the overall power consumption. First, fabrication imperfections even on sub-nm scale result in spectral device non-uniformity that require fine-tuning during device operation. Second, the photonic devices need to be actively corrected to compensate thermal drifts. As a result significant amount of power is wasted if no athermal and wavelength-trimmable solutions are utilized. Consequently, in order to minimize the total power requirement of photonic circuits in a passive way, trimming methods are required to correct the device inhomogeneities from manufacturing and athermal solutions are essential to oppose temperature fluctuations of the passive/active components during run-time. We present an approach to fabricate CMOS backend-compatible and athermal passive photonic filters that can be corrected for fabrication inhomogeneities by UV-trimming based on low-loss amorphous-SOI waveguides with TiO2 cladding. The trimming of highly confined 10 μm ring resonators is proven over a free spectral range retaining athermal operation. The athermal functionality of 2nd-order 5 μm add/drop microrings is demonstrated over 40°C covering a broad wavelength interval of 60 nm.

Optics Communications: Special issue on Polymer Photonics and Its Applications

Science.gov (United States)

Zhang, Ziyang; Pitwon, Richard C. A.; Feng, Jing

2016-03-01

In the last decade polymer photonics has witnessed a tremendous boost in research efforts and practical applications. Polymer materials can be engineered to exhibit unique optical and electrical properties. Extremely transparent and reliable passive optical polymers have been made commercially available and paved the ground for the development of various waveguide components. Advancement in the research activities regarding the synthesis of active polymers has enabled devices such as ultra-fast electro-optic modulators, efficient white light emitting diodes, broadband solar cells, flexible displays, and so on. The fabrication technology is not only fast and cost-effective, but also provides flexibility and broad compatibility with other semiconductor processing technologies. Reports show that polymers have been integrated in photonic platforms such as silicon-on-insulator (SOI), III-V semiconductors, and silica PLCs, and vice versa, photonic components made from a multitude of materials have been integrated, in a heterogeneous/hybrid manner, in polymer photonic platforms.

Dual-function photonic integrated circuit for frequency octo-tupling or single-side-band modulation.

Science.gov (United States)

Hasan, Mehedi; Maldonado-Basilio, Ramón; Hall, Trevor J

2015-06-01

A dual-function photonic integrated circuit for microwave photonic applications is proposed. The circuit consists of four linear electro-optic phase modulators connected optically in parallel within a generalized Mach-Zehnder interferometer architecture. The photonic circuit is arranged to have two separate output ports. A first port provides frequency up-conversion of a microwave signal from the electrical to the optical domain; equivalently single-side-band modulation. A second port provides tunable millimeter wave carriers by frequency octo-tupling of an appropriate amplitude RF carrier. The circuit exploits the intrinsic relative phases between the ports of multi-mode interference couplers to provide substantially all the static optical phases needed. The operation of the proposed dual-function photonic integrated circuit is verified by computer simulations. The performance of the frequency octo-tupling and up-conversion functions is analyzed in terms of the electrical signal to harmonic distortion ratio and the optical single side band to unwanted harmonics ratio, respectively.

Continuous-variable measurement-device-independent quantum key distribution with virtual photon subtraction

Science.gov (United States)

Zhao, Yijia; Zhang, Yichen; Xu, Bingjie; Yu, Song; Guo, Hong

2018-04-01

The method of improving the performance of continuous-variable quantum key distribution protocols by postselection has been recently proposed and verified. In continuous-variable measurement-device-independent quantum key distribution (CV-MDI QKD) protocols, the measurement results are obtained from untrusted third party Charlie. There is still not an effective method of improving CV-MDI QKD by the postselection with untrusted measurement. We propose a method to improve the performance of coherent-state CV-MDI QKD protocol by virtual photon subtraction via non-Gaussian postselection. The non-Gaussian postselection of transmitted data is equivalent to an ideal photon subtraction on the two-mode squeezed vacuum state, which is favorable to enhance the performance of CV-MDI QKD. In CV-MDI QKD protocol with non-Gaussian postselection, two users select their own data independently. We demonstrate that the optimal performance of the renovated CV-MDI QKD protocol is obtained with the transmitted data only selected by Alice. By setting appropriate parameters of the virtual photon subtraction, the secret key rate and tolerable excess noise are both improved at long transmission distance. The method provides an effective optimization scheme for the application of CV-MDI QKD protocols.

Visual Sensor for Sterilization of Polymer Fixtures Using Embedded Mesoporous Silicon Photonic Crystals.

Science.gov (United States)

Kumeria, Tushar; Wang, Joanna; Chan, Nicole; Harris, Todd J; Sailor, Michael J

2018-01-26

A porous photonic crystal is integrated with a plastic medical fixture (IV connector hub) to provide a visual colorimetric sensor to indicate the presence or absence of alcohol used to sterilize the fixture. The photonic crystal is prepared in porous silicon (pSi) by electrochemical anodization of single crystal silicon, and the porosity and the stop band of the material is engineered such that the integrated device visibly changes color (green to red or blue to green) when infiltrated with alcohol. Two types of self-reporting devices are prepared and their performance compared: the first type involves heat-assisted fusion of a freestanding pSi photonic crystal to the connector end of a preformed polycarbonate hub, forming a composite where the unfilled portion of the pSi film acts as the sensor; the second involves generation of an all-polymer replica of the pSi photonic crystal by complete thermal infiltration of the pSi film and subsequent chemical dissolution of the pSi portion. Both types of sensors visibly change color when wetted with alcohol, and the color reverts to the original upon evaporation of the liquid. The sensor performance is verified using E. coli-infected samples.

Integration of optically active Neodymium ions in Niobium devices (Nd:Nb): quantum memory for hybrid quantum entangled systems

Science.gov (United States)

Nayfeh, O. M.; Chao, D.; Djapic, N.; Sims, P.; Liu, B.; Sharma, S.; Lerum, L.; Fahem, M.; Dinh, V.; Zlatanovic, S.; Lynn, B.; Torres, C.; Higa, B.; Moore, J.; Upchurch, A.; Cothern, J.; Tukeman, M.; Barua, R.; Davidson, B.; Ramirez, A. D.; Rees, C. D.; Anant, V.; Kanter, G. S.

2017-08-01

Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb is implanted with Nd spanning 10-60 keV energy and 1013-1014 cm-2 dose producing a 1- 3% Nd:Nb concentration as confirmed by energy-dispersive X-ray spectroscopy. Scanning confocal photoluminescence (PL) at 785 nm excitation are made and sharp emission peaks from the 4F3/2 -red shift and increased broadening to a 4.8 nm linewidth. Nd:Nb is photoconductive and responds strongly to applied fields. Furthermore, optically detected magnetic resonance (ODMR) measurements are presented spanning near-infrared telecom band. The modulation of the emission intensity with magnetic field and microwave power by integration of these magnetic Kramer type Nd ions is quantified along with spin echoes under pulsed microwave π-π/2 excitation. A hybrid system architecture is proposed using spin and photon quantum information storage with the nuclear and electron states of the Nd3+ and neighboring Nb atoms that can couple qubit states to hyperfine 7/2 spin states of Nd:Nb and onto NIR optical levels excitable with entangled single photons, thus enabling implementation of computing and networking/internet protocols in a single platform.

Silicon photonic integration in telecommunications

Directory of Open Access Journals (Sweden)

Christopher Richard Doerr

2015-08-01

Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

Photonic quantum technologies (Presentation Recording)

Science.gov (United States)

O'Brien, Jeremy L.

2015-09-01

The impact of quantum technology will be profound and far-reaching: secure communication networks for consumers, corporations and government; precision sensors for biomedical technology and environmental monitoring; quantum simulators for the design of new materials, pharmaceuticals and clean energy devices; and ultra-powerful quantum computers for addressing otherwise impossibly large datasets for machine learning and artificial intelligence applications. However, engineering quantum systems and controlling them is an immense technological challenge: they are inherently fragile; and information extracted from a quantum system necessarily disturbs the system itself. Of the various approaches to quantum technologies, photons are particularly appealing for their low-noise properties and ease of manipulation at the single qubit level. We have developed an integrated waveguide approach to photonic quantum circuits for high performance, miniaturization and scalability. We will described our latest progress in generating, manipulating and interacting single photons in waveguide circuits on silicon chips.

The description of two-photon Rabi oscillations in the path integral approach

Science.gov (United States)

Biryukov, A. A.; Degtyareva, Ya. V.; Shleenkov, M. A.

2018-04-01

The probability of quantum transitions of a molecule between its states under the action of an electromagnetic field is represented as an integral over trajectories from a real alternating functional. A method is proposed for computing the integral using recurrence relations. The method is attached to describe the two-photon Rabi oscillations.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

Science.gov (United States)

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Experimental and numerical study of electrical crosstalk in photonic integrated circuits

NARCIS (Netherlands)

Yao, W.; Gilardi, G.; Calabretta, N.; Smit, M.K.; Wale, M.J.

2015-01-01

This paper presents measurement results on electrical crosstalk between interconnect lines and electro-optical phaseshifters in photonic integrated circuits. The results indicate that overall crosstalk originates from radiative and substrate coupling between lines and from shared ground connections.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Engineering photonic density of states using metamaterials

DEFF Research Database (Denmark)

Jacob, Z.; Kim, J.Y.; Naik, G.V.

2010-01-01

The photonic density of states (PDOS), like its electronic counterpart, is one of the key physical quantities governing a variety of phenomena and hence PDOS manipulation is the route to new photonic devices. The PDOS is conventionally altered by exploiting the resonance within a device such as a......The photonic density of states (PDOS), like its electronic counterpart, is one of the key physical quantities governing a variety of phenomena and hence PDOS manipulation is the route to new photonic devices. The PDOS is conventionally altered by exploiting the resonance within a device...... such as a microcavity or a bandgap structure like a photonic crystal. Here we show that nanostructured metamaterials with hyperbolic dispersion can dramatically enhance the photonic density of states paving the way for metamaterial-based PDOS engineering....

Integrated-optics heralded controlled-NOT gate for polarization-encoded qubits

Science.gov (United States)

Zeuner, Jonas; Sharma, Aditya N.; Tillmann, Max; Heilmann, René; Gräfe, Markus; Moqanaki, Amir; Szameit, Alexander; Walther, Philip

2018-03-01

Recent progress in integrated-optics technology has made photonics a promising platform for quantum networks and quantum computation protocols. Integrated optical circuits are characterized by small device footprints and unrivalled intrinsic interferometric stability. Here, we take advantage of femtosecond-laser-written waveguides' ability to process polarization-encoded qubits and present an implementation of a heralded controlled-NOT gate on chip. We evaluate the gate performance in the computational basis and a superposition basis, showing that the gate can create polarization entanglement between two photons. Transmission through the integrated device is optimized using thermally expanded core fibers and adiabatically reduced mode-field diameters at the waveguide facets. This demonstration underlines the feasibility of integrated quantum gates for all-optical quantum networks and quantum repeaters.

Quantum photonics with quantum dots in photonic wires

DEFF Research Database (Denmark)

Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide

2016-01-01

We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...

Preliminary design and integration of EPICS operation interface for the Taiwan photon source

International Nuclear Information System (INIS)

Cheng, Y.S.; Jenny Chen; Chiu, P.C.; Kuo, C.H.; Liao, C.Y.; Hsu, K.T.; Wu, C.Y.

2012-01-01

The TPS (Taiwan Photon Source) is the latest generation 3 GeV synchrotron light source which has been in construction since 2010. The EPICS (Experimental Physics and Industrial Control System) framework is adopted as control system infrastructure for the TPS. The EPICS IOCs (Input Output Controller) and various database records have been gradually implemented to control and monitor available subsystems of the TPS at this moment. The subsystem includes timing, power supply, motion controller, miscellaneous Ethernet compliant devices etc. Through EPICS PVs (Process Variables) channel access, remote access I/O data via Ethernet interface can be observed by the usable graphical tool-kits, such as the EDM (Extensible Display Manager) and MATLAB. The operation interface mainly includes the function of setting, reading, save, restore and etc. Integration of operation interfaces will depend upon properties of each subsystem. In addition, the centralized management method is utilized to serve every client from file servers in order to maintain consistent versions of related EPICS files. (authors)

Integrated Optical Mach-Zehnder Interferometer Based on Organic-Inorganic Hybrids for Photonics-on-a-Chip Biosensing Applications.

Science.gov (United States)

Bastos, Ana R; Vicente, Carlos M S; Oliveira-Silva, Rui; Silva, Nuno J O; Tacão, Marta; Costa, João P da; Lima, Mário; André, Paulo S; Ferreira, Rute A S

2018-03-12

The development of portable low-cost integrated optics-based biosensors for photonics-on-a-chip devices for real-time diagnosis are of great interest, offering significant advantages over current analytical methods. We report the fabrication and characterization of an optical sensor based on a Mach-Zehnder interferometer to monitor the growing concentration of bacteria in a liquid medium. The device pattern was imprinted on transparent self-patternable organic-inorganic di-ureasil hybrid films by direct UV-laser, reducing the complexity and cost production compared with lithographic techniques or three-dimensional (3D) patterning using femtosecond lasers. The sensor performance was evaluated using, as an illustrative example, E. coli cell growth in an aqueous medium. The measured sensitivity (2 × 10 -4 RIU) and limit of detection (LOD = 2 × 10 -4 ) are among the best values known for low-refractive index contrast sensors. Furthermore, the di-ureasil hybrid used to produce this biosensor has additional advantages, such as mechanical flexibility, thermal stability, and low insertion losses due to fiber-device refractive index mismatch (~1.49). Therefore, the proposed sensor constitutes a direct, compact, fast, and cost-effective solution for monitoring the concentration of lived-cells.

Novel wideband microwave polarization network using a fully-reconfigurable photonic waveguide interleaver with a two-ring resonator-assisted asymmetric Mach-Zehnder structure.

Science.gov (United States)

Zhuang, Leimeng; Beeker, Willem; Leinse, Arne; Heideman, René; van Dijk, Paulus; Roeloffzen, Chris

2013-02-11

We propose and demonstrate a novel wideband microwave photonic polarization network for dual linear-polarized antennas. The polarization network is based on a waveguide-implemented fully-reconfigurable optical interleaver using a two-ring resonator-assisted asymmetric Mach-Zehnder structure. For microwave photonic signal processing, this structure is able to serve as a wideband 2 × 2 RF coupler with reconfigurable complex coefficients, and therefore can be used as a polarization network for wideband antennas. Such a device can equip the antennas with not only the polarization rotation capability for linear-polarization signals but also the capability to operate with and tune between two opposite circular polarizations. Operating together with a particular modulation scheme, the device is also able to serve for simultaneous feeding of dual-polarization signals. These photonic-implemented RF functionalities can be applied to wideband antenna systems to perform agile polarization manipulations and tracking operations. An example of such a interleaver has been realized in TriPleX waveguide technology, which was designed with a free spectral range of 20 GHz and a mask footprint of smaller than 1 × 1 cm. Using the realized device, the reconfigurable complex coefficients of the polarization network were demonstrated with a continuous bandwidth from 2 to 8 GHz and an in-band phase ripple of smaller than 5 degree. The waveguide structure of the device allows it to be further integrated with other functional building blocks of a photonic integrated circuit to realize on-chip, complex microwave photonic processors. Of particular interest, it can be included in an optical beamformer for phased array antennas, so that simultaneous wideband beam and polarization trackings can be achieved photonically. To our knowledge, this is the first-time on-chip demonstration of an integrated microwave photonic polarization network for dual linear-polarized antennas.

Acousto-optic modulation of a photonic crystal nanocavity with Lamb waves in microwave K band

Energy Technology Data Exchange (ETDEWEB)

Tadesse, Semere A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States); School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Li, Huan; Liu, Qiyu; Li, Mo, E-mail: moli@umn.edu [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

2015-11-16

Integrating nanoscale electromechanical transducers and nanophotonic devices potentially can enable acousto-optic devices to reach unprecedented high frequencies and modulation efficiency. Here, we demonstrate acousto-optic modulation of a photonic crystal nanocavity using Lamb waves with frequency up to 19 GHz, reaching the microwave K band. The devices are fabricated in suspended aluminum nitride membrane. Excitation of acoustic waves is achieved with interdigital transducers with period as small as 300 nm. Confining both acoustic wave and optical wave within the thickness of the membrane leads to improved acousto-optic modulation efficiency in these devices than that obtained in previous surface acoustic wave devices. Our system demonstrates a scalable optomechanical platform where strong acousto-optic coupling between cavity-confined photons and high frequency traveling phonons can be explored.

Atomic layer deposition for graphene device integration

NARCIS (Netherlands)

Vervuurt, R.H.J.; Kessels, W.M.M.; Bol, A.A.

2017-01-01

Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD)

Guided wave photonics fundamentals and applications with Matlab

CERN Document Server

Binh, Le Nguyen

2012-01-01

IntroductionHistorical Overview of Integrated Optics and PhotonicsWhy Analysis of Optical Guided-wave Devices?Principal ObjectivesChapters OverviewSingle Mode Planar Optical WaveguidesFormation of Planar Single Mode Waveguide ProblemsApproximate Analytical Methods of SolutionAPPENDIX A: Maxwell Equations in Dielectric MediaAPPENDIX B: Exact Analysis of Clad-linear Optical WaveguidesAPPENDIX C: Wentzel-Kramers-Brilluoin Method, Turning Points and Connection FormulaeAPPENDIX D: Design and Simulation of Planar Optical Waveguides3D Integrated Optical WaveguidesMarcatili's Method| Effective Index M

Photonic-powered cable assembly

Science.gov (United States)

Sanderson, Stephen N.; Appel, Titus James; Wrye, IV, Walter C.

2013-01-22

A photonic-cable assembly includes a power source cable connector ("PSCC") coupled to a power receive cable connector ("PRCC") via a fiber cable. The PSCC electrically connects to a first electronic device and houses a photonic power source and an optical data transmitter. The fiber cable includes an optical transmit data path coupled to the optical data transmitter, an optical power path coupled to the photonic power source, and an optical feedback path coupled to provide feedback control to the photonic power source. The PRCC electrically connects to a second electronic device and houses an optical data receiver coupled to the optical transmit data path, a feedback controller coupled to the optical feedback path to control the photonic power source, and a photonic power converter coupled to the optical power path to convert photonic energy received over the optical power path to electrical energy to power components of the PRCC.

Bio-Inspired Photon Absorption and Energy Transfer for Next Generation Photovoltaic Devices

Science.gov (United States)

Magsi, Komal

Nature's solar energy harvesting system, photosynthesis, serves as a model for photon absorption, spectra broadening, and energy transfer. Photosynthesis harvests light far differently than photovoltaic cells. These differences offer both engineering opportunity and scientific challenges since not all of the natural photon absorption mechanisms have been understood. In return, solar cells can be a very sensitive probe for the absorption characteristics of molecules capable of transferring charge to a conductive interface. The objective of this scientific work is the advancement of next generation photovoltaics through the development and application of natural photo-energy transfer processes. Two scientific methods were used in the development and application of enhancing photon absorption and transfer. First, a detailed analysis of photovoltaic front surface fluorescent spectral modification and light scattering by hetero-structure was conducted. Phosphor based spectral down-conversion is a well-known laser technology. The theoretical calculations presented here indicate that parasitic losses and light scattering within the spectral range are large enough to offset any expected gains. The second approach for enhancing photon absorption is based on bio-inspired mechanisms. Key to the utilization of these natural processes is the development of a detailed scientific understanding and the application of these processes to cost effective systems and devices. In this work both aspects are investigated. Dye type solar cells were prepared and tested as a function of Chlorophyll (or Sodium-Copper Chlorophyllin) and accessory dyes. Forster has shown that the fluorescence ratio of Chlorophyll is modified and broadened by separate photon absorption (sensitized absorption) through interaction with nearby accessory pigments. This work used the dye type solar cell as a diagnostic tool by which to investigate photon absorption and photon energy transfer. These experiments shed

Phased-array-based photonic integrated circuits for wavelength division multiplexing applications

NARCIS (Netherlands)

Staring, A.A.M.; Smit, M.K.

1997-01-01

Wavelength division multiplexing (WDM) technology provides many options to the design of flexible all-optical networks. In order to exploit these options to their full potential, photonic integrated circuits (PICs) for wavelength routing and switching will be indispensable. One of the basic building

Integration in design and manufacturing of polymer smart devices

NARCIS (Netherlands)

Bolt, P.J.; Zwart, R.M. de; Tacken, R.A.; Rendering, H.

2009-01-01

Integration of functions in single components is pursued in order to manufacture smaller and smarter polymer micro devices at less cost, through e.g. less assembly steps. It requires integration on both product and production side. This paper addresses the use of molded interconnect device (MID)

Invited Article: Electrically tunable silicon-based on-chip microdisk resonator for integrated microwave photonic applications

Directory of Open Access Journals (Sweden)

Weifeng Zhang

2016-11-01

Full Text Available Silicon photonics with advantages of small footprint, compatibility with the mature CMOS fabrication technology, and its potential for seamless integration with electronics is making a significant difference in realizing on-chip integration of photonic systems. A microdisk resonator (MDR with a strong capacity in trapping and storing photons is a versatile element in photonic integrated circuits. Thanks to the large index contrast, a silicon-based MDR with an ultra-compact footprint has a great potential for large-scale and high-density integrations. However, the existence of multiple whispering gallery modes (WGMs and resonance splitting in an MDR imposes inherent limitations on its widespread applications. In addition, the waveguide structure of an MDR is incompatible with that of a lateral PN junction, which leads to the deprivation of its electrical tunability. To circumvent these limitations, in this paper we propose a novel design of a silicon-based MDR by introducing a specifically designed slab waveguide to surround the disk and the lateral sides of the bus waveguide to suppress higher-order WGMs and to support the incorporation of a lateral PN junction for electrical tunability. An MDR based on the proposed design is fabricated and its optical performance is evaluated. The fabricated MDR exhibits single-mode operation with a free spectral range of 28.85 nm. Its electrical tunability is also demonstrated and an electro-optic frequency response with a 3-dB modulation bandwidth of ∼30.5 GHz is measured. The use of the fabricated MDR for the implementation of an electrically tunable optical delay-line and a tunable fractional-order temporal photonic differentiator is demonstrated.

Stochastic simulation and robust design optimization of integrated photonic filters

Directory of Open Access Journals (Sweden)

Weng Tsui-Wei

2016-07-01

Full Text Available Manufacturing variations are becoming an unavoidable issue in modern fabrication processes; therefore, it is crucial to be able to include stochastic uncertainties in the design phase. In this paper, integrated photonic coupled ring resonator filters are considered as an example of significant interest. The sparsity structure in photonic circuits is exploited to construct a sparse combined generalized polynomial chaos model, which is then used to analyze related statistics and perform robust design optimization. Simulation results show that the optimized circuits are more robust to fabrication process variations and achieve a reduction of 11%–35% in the mean square errors of the 3 dB bandwidth compared to unoptimized nominal designs.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

Energy Technology Data Exchange (ETDEWEB)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

2015-03-16

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

International Nuclear Information System (INIS)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

2015-01-01

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes

Two-dimensional topological photonics

Science.gov (United States)

Khanikaev, Alexander B.; Shvets, Gennady

2017-12-01

Originating from the studies of two-dimensional condensed-matter states, the concept of topological order has recently been expanded to other fields of physics and engineering, particularly optics and photonics. Topological photonic structures have already overturned some of the traditional views on wave propagation and manipulation. The application of topological concepts to guided wave propagation has enabled novel photonic devices, such as reflection-free sharply bent waveguides, robust delay lines, spin-polarized switches and non-reciprocal devices. Discrete degrees of freedom, widely used in condensed-matter physics, such as spin and valley, are now entering the realm of photonics. In this Review, we summarize the latest advances in this highly dynamic field, with special emphasis on the experimental work on two-dimensional photonic topological structures.

Chip-integrated optical power limiter based on an all-passive micro-ring resonator

Science.gov (United States)

Yan, Siqi; Dong, Jianji; Zheng, Aoling; Zhang, Xinliang

2014-10-01

Recent progress in silicon nanophotonics has dramatically advanced the possible realization of large-scale on-chip optical interconnects integration. Adopting photons as information carriers can break the performance bottleneck of electronic integrated circuit such as serious thermal losses and poor process rates. However, in integrated photonics circuits, few reported work can impose an upper limit of optical power therefore prevent the optical device from harm caused by high power. In this study, we experimentally demonstrate a feasible integrated scheme based on a single all-passive micro-ring resonator to realize the optical power limitation which has a similar function of current limiting circuit in electronics. Besides, we analyze the performance of optical power limiter at various signal bit rates. The results show that the proposed device can limit the signal power effectively at a bit rate up to 20 Gbit/s without deteriorating the signal. Meanwhile, this ultra-compact silicon device can be completely compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may pave the way of very large scale integrated photonic circuits for all-optical information processors and artificial intelligence systems.

Photonics-on-a-chip: recent advances in integrated waveguides as enabling detection elements for real-world, lab-on-a-chip biosensing applications.

Science.gov (United States)

Washburn, Adam L; Bailey, Ryan C

2011-01-21

By leveraging advances in semiconductor microfabrication technologies, chip-integrated optical biosensors are poised to make an impact as scalable and multiplexable bioanalytical measurement tools for lab-on-a-chip applications. In particular, waveguide-based optical sensing technology appears to be exceptionally amenable to chip integration and miniaturization, and, as a result, the recent literature is replete with examples of chip-integrated waveguide sensing platforms developed to address a wide range of contemporary analytical challenges. As an overview of the most recent advances within this dynamic field, this review highlights work from the last 2-3 years in the areas of grating-coupled, interferometric, photonic crystal, and microresonator waveguide sensors. With a focus towards device integration, particular emphasis is placed on demonstrations of biosensing using these technologies within microfluidically controlled environments. In addition, examples of multiplexed detection and sensing within complex matrices--important features for real-world applicability--are given special attention.

Magneto-optical non-reciprocal devices in silicon photonics

Directory of Open Access Journals (Sweden)

Yuya Shoji

2014-01-01

Full Text Available Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.

Cascaded Mach-Zehnder wavelength filters in silicon photonics for low loss and flat pass-band WDM (de-)multiplexing.

Science.gov (United States)

Horst, Folkert; Green, William M J; Assefa, Solomon; Shank, Steven M; Vlasov, Yurii A; Offrein, Bert Jan

2013-05-20

We present 1-to-8 wavelength (de-)multiplexer devices based on a binary tree of cascaded Mach-Zehnder-like lattice filters, and manufactured using a 90 nm CMOS-integrated silicon photonics technology. We demonstrate that these devices combine a flat pass-band over more than 50% of the channel spacing with low insertion loss of less than 1.6 dB, and have a small device size of approximately 500 × 400 µm. This makes this type of filters well suited for application as WDM (de-)multiplexer in silicon photonics transceivers for optical data communication in large scale computer systems.

Hybrid polymer photonic crystal fiber with integrated chalcogenide glass nanofilms

DEFF Research Database (Denmark)

Markos, Christos; Kubat, Irnis; Bang, Ole

2014-01-01

The combination of chalcogenide glasses with polymer photonic crystal fibers (PCFs) is a difficult and challenging task due to their different thermo-mechanical material properties. Here we report the first experimental realization of a hybrid polymer-chalcogenide PCF with integrated As2S3 glass...... nanofilms at the inner surface of the air-channels of a poly-methyl-methacrylate (PMMA) PCF. The integrated high refractive index glass films introduce distinct antiresonant transmission bands in the 480-900 nm wavelength region. We demonstrate that the ultra-high Kerr nonlinearity of the chalcogenide glass...

All-fiber hybrid photon-plasmon circuits: integrating nanowire plasmonics with fiber optics.

Science.gov (United States)

Li, Xiyuan; Li, Wei; Guo, Xin; Lou, Jingyi; Tong, Limin

2013-07-01

We demonstrate all-fiber hybrid photon-plasmon circuits by integrating Ag nanowires with optical fibers. Relying on near-field coupling, we realize a photon-to-plasmon conversion efficiency up to 92% in a fiber-based nanowire plasmonic probe. Around optical communication band, we assemble an all-fiber resonator and a Mach-Zehnder interferometer (MZI) with Q-factor of 6 × 10(6) and extinction ratio up to 30 dB, respectively. Using the MZI, we demonstrate fiber-compatible plasmonic sensing with high sensitivity and low optical power.

Hybrid materials for optics and photonics.

Science.gov (United States)

Lebeau, Benedicte; Innocenzi, Plinio

2011-02-01

The interest in organic-inorganic hybrids as materials for optics and photonics started more than 25 years ago and since then has known a continuous and strong growth. The high versatility of sol-gel processing offers a wide range of possibilities to design tailor-made materials in terms of structure, texture, functionality, properties and shape modelling. From the first hybrid material with optical functional properties that has been obtained by incorporation of an organic dye in a silica matrix, the research in the field has quickly evolved towards more sophisticated systems, such as multifunctional and/or multicomponent materials, nanoscale and self-assembled hybrids and devices for integrated optics. In the present critical review, we have focused our attention on three main research areas: passive and active optical hybrid sol-gel materials, and integrated optics. This is far from exhaustive but enough to give an overview of the huge potential of these materials in photonics and optics (254 references).

Transverse angular momentum in topological photonic crystals

Science.gov (United States)

Deng, Wei-Min; Chen, Xiao-Dong; Zhao, Fu-Li; Dong, Jian-Wen

2018-01-01

Engineering local angular momentum of structured light fields in real space enables applications in many fields, in particular, the realization of unidirectional robust transport in topological photonic crystals with a non-trivial Berry vortex in momentum space. Here, we show transverse angular momentum modes in silicon topological photonic crystals when considering transverse electric polarization. Excited by a chiral external source with either transverse spin angular momentum or transverse phase vortex, robust light flow propagating along opposite directions is observed in several kinds of sharp-turn interfaces between two topologically-distinct silicon photonic crystals. A transverse orbital angular momentum mode with alternating phase vortex exists at the boundary of two such photonic crystals. In addition, unidirectional transport is robust to the working frequency even when the ring size or location of the pseudo-spin source varies in a certain range, leading to the superiority of the broadband photonic device. These findings enable one to make use of transverse angular momentum, a kind of degree of freedom, to achieve unidirectional robust transport in the telecom region and other potential applications in integrated photonic circuits, such as on-chip robust delay lines.

Topological photonic orbital-angular-momentum switch

Science.gov (United States)

Luo, Xi-Wang; Zhang, Chuanwei; Guo, Guang-Can; Zhou, Zheng-Wei

2018-04-01

The large number of available orbital-angular-momentum (OAM) states of photons provides a unique resource for many important applications in quantum information and optical communications. However, conventional OAM switching devices usually rely on precise parameter control and are limited by slow switching rate and low efficiency. Here we propose a robust, fast, and efficient photonic OAM switch device based on a topological process, where photons are adiabatically pumped to a target OAM state on demand. Such topological OAM pumping can be realized through manipulating photons in a few degenerate main cavities and involves only a limited number of optical elements. A large change of OAM at ˜10q can be realized with only q degenerate main cavities and at most 5 q pumping cycles. The topological photonic OAM switch may become a powerful device for broad applications in many different fields and motivate a topological design of conventional optical devices.

Quantum Efficiency of Hybrid Photon Detectors for the LHCb RICH

CERN Document Server

Lambert, R W

2008-01-01

The production of Hybrid Photon Detectors to be used as the single-photon sensors for the RICH detectors of the LHCb experiment has recently finished. We present the quantum efficiency measurements of the entire sample of 550 tubes. The manufacturer has succeeded in consistently improving the quantum efficiency of the employed S20-type multi-alkali photocathode above our expectations, by a relative 27 % integrated over the energy spectrum. We also report measurements of the vacuum quality using the photocurrent of the device as a monitor for possible vacuum degradation.

Upgraded photon calorimeter with integrating readout for the Hall A Compton polarimeter at Jefferson Lab

International Nuclear Information System (INIS)

Friend, M.; Parno, D.; Benmokhtar, F.; Camsonne, A.; Dalton, M.M.; Franklin, G.B.; Mamyan, V.; Michaels, R.; Nanda, S.; Nelyubin, V.; Paschke, K.; Quinn, B.; Rakhman, A.; Souder, P.; Tobias, A.

2012-01-01

The photon arm of the Compton polarimeter in Hall A of Jefferson Lab has been upgraded to allow for electron beam polarization measurements with better than 1% accuracy. The data acquisition (DAQ) system now includes an integrating mode, which eliminates several systematic uncertainties inherent in the original counting-DAQ setup. The photon calorimeter has been replaced with a Ce-doped Gd 2 SiO 5 crystal, which has a bright output and fast response, and works well for measurements using the new integrating method at electron beam energies from 1 to 6 GeV.

Experimental verification of layout physical verification of silicon photonics

Science.gov (United States)

El Shamy, Raghi S.; Swillam, Mohamed A.

2018-02-01

Silicon photonics have been approved as one of the best platforms for dense integration of photonic integrated circuits (PICs) due to the high refractive index contrast among its materials. Silicon on insulator (SOI) is a widespread photonics technology, which support a variety of devices for lots of applications. As the photonics market is growing, the number of components in the PICs increases which increase the need for an automated physical verification (PV) process. This PV process will assure reliable fabrication of the PICs as it will check both the manufacturability and the reliability of the circuit. However, PV process is challenging in the case of PICs as it requires running an exhaustive electromagnetic (EM) simulations. Our group have recently proposed an empirical closed form models for the directional coupler and the waveguide bends based on the SOI technology. The models have shown a very good agreement with both finite element method (FEM) and finite difference time domain (FDTD) solvers. These models save the huge time of the 3D EM simulations and can be easily included in any electronic design automation (EDA) flow as the equations parameters can be easily extracted from the layout. In this paper we present experimental verification for our previously proposed models. SOI directional couplers with different dimensions have been fabricated using electron beam lithography and measured. The results from the measurements of the fabricate devices have been compared to the derived models and show a very good agreement. Also the matching can reach 100% by calibrating certain parameter in the model.

Valley photonic crystals for control of spin and topology.

Science.gov (United States)

Dong, Jian-Wen; Chen, Xiao-Dong; Zhu, Hanyu; Wang, Yuan; Zhang, Xiang

2017-03-01

Photonic crystals offer unprecedented opportunity for light manipulation and applications in optical communication and sensing. Exploration of topology in photonic crystals and metamaterials with non-zero gauge field has inspired a number of intriguing optical phenomena such as one-way transport and Weyl points. Recently, a new degree of freedom, valley, has been demonstrated in two-dimensional materials. Here, we propose a concept of valley photonic crystals with electromagnetic duality symmetry but broken inversion symmetry. We observe photonic valley Hall effect originating from valley-dependent spin-split bulk bands, even in topologically trivial photonic crystals. Valley-spin locking behaviour results in selective net spin flow inside bulk valley photonic crystals. We also show the independent control of valley and topology in a single system that has been long pursued in electronic systems, resulting in topologically-protected flat edge states. Valley photonic crystals not only offer a route towards the observation of non-trivial states, but also open the way for device applications in integrated photonics and information processing using spin-dependent transportation.

Photonics

CERN Document Server

Andrews, David L

2015-01-01

Discusses the basic physical principles underlying thescience and technology of nanophotonics, its materials andstructures This volume presents nanophotonic structures and Materials.Nanophotonics is photonic science and technology that utilizeslight/matter interactions on the nanoscale where researchers arediscovering new phenomena and developing techniques that go wellbeyond what is possible with conventional photonics andelectronics.The topics discussed in this volume are: CavityPhotonics; Cold Atoms and Bose-Einstein Condensates; Displays;E-paper; Graphene; Integrated Photonics; Liquid Cry

Microfluidics and photonics for Bio-System-on-a-Chip: a review of advancements in technology towards a microfluidic flow cytometry chip.

Science.gov (United States)

Godin, Jessica; Chen, Chun-Hao; Cho, Sung Hwan; Qiao, Wen; Tsai, Frank; Lo, Yu-Hwa

2008-10-01

Microfluidics and photonics come together to form a field commonly referred to as 'optofluidics'. Flow cytometry provides the field with a technology base from which both microfluidic and photonic components be developed and integrated into a useful device. This article reviews some of the more recent developments to familiarize a reader with the current state of the technologies and also highlights the requirements of the device and how researchers are working to meet these needs.

Silicon-photonic interferometric biosensor using active phase demodulation

Science.gov (United States)

Marin, Y.; Toccafondo, V.; Velha, P.; Scarano, S.; Tirelli, S.; Nottola, A.; Jeong, Y.; Jeon, H. P.; Minunni, M.; Di Pasquale, F.; Oton, C. J.

2018-02-01

Silicon photonics is becoming a consolidated technology, mainly in the telecom/datacom sector, but with a great potential in the chemical and biomedical sensor market too, mainly due to its CMOS compatibility, which allows massfabrication of huge numbers of miniaturized devices at a very low cost per chip. Integrated photonic sensors, typically based on resonators, interferometers, or periodic structures, are easy to multiplex as the light is confined in optical waveguides. In this work, we present a silicon-photonic sensor capable of measuring refractive index and chemical binding of biomolecules on the surface, using a low-cost phase interrogation scheme. The sensor consists of a pair of balanced Mach-Zehnder interferometers with interaction lengths of 2.5 mm and 22 mm, wound to a sensing area of only 500 μm x500 μm. The phase interrogation is performed with a fixed laser and an active phase demodulation approach based on a phase generated carrier (PGC) technique using a phase demodulator integrated within the chip. No laser tuning is required, and the technique can extract the univocal phase value with no sensitivity fading. The detection only requires a photo-receiver per interferometer, analog-to-digital conversion, and simple processing performed in real-time. We present repeatable and linear refractive index measurements, with a detection limit down to 4.7·10-7 RIU. We also present sensing results on a chemically-functionalized sample, where anti-BSA to BSA (bovine serum albumin) binding curves are clearly visible for concentrations down to 5 ppm. Considering the advantages of silicon photonics, this device has great potential over several applications in the chemical/biochemical sensing industry.

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

Science.gov (United States)

Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

2017-02-15

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

CERN Document Server

Radamson, Henry

2014-01-01

Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

Simulation of quantum dynamics with integrated photonics

Science.gov (United States)

Sansoni, Linda; Sciarrino, Fabio; Mataloni, Paolo; Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto

2012-12-01

In recent years, quantum walks have been proposed as promising resources for the simulation of physical quantum systems. In fact it is widely adopted to simulate quantum dynamics. Up to now single particle quantum walks have been experimentally demonstrated by different approaches, while only few experiments involving many-particle quantum walks have been realized. Here we simulate the 2-particle dynamics on a discrete time quantum walk, built on an array of integrated waveguide beam splitters. The polarization independence of the quantum walk circuit allowed us to exploit the polarization entanglement to encode the symmetry of the two-photon wavefunction, thus the bunching-antibunching behavior of non interacting bosons and fermions has been simulated. We have also characterized the possible distinguishability and decoherence effects arising in such a structure. This study is necessary in view of the realization of a quantum simulator based on an integrated optical array built on a large number of beam splitters.

Photonic integrated transmitter and receiver for NG-PON2

Science.gov (United States)

Tavares, Ana; Lopes, Ana; Rodrigues, Cláudio; Mãocheia, Paulo; Mendes, Tiago; Brandão, Simão.; Rodrigues, Francisco; Ferreira, Ricardo; Teixeira, António

2014-08-01

In this paper the authors present a monolithic Photonic Integrated Circuit which includes a transmitter and a receiver for NG-PON2. With this layout it is possible to build an OLT and, by redesigning some filters, also an ONU. This technology allows reducing the losses in the transmitter and in the receiver, increasing power budget, and also reducing the OEO conversions, which has been a major problem that operators want to surpass.

Foundry fabricated photonic integrated circuit optical phase lock loop.

Science.gov (United States)

Bałakier, Katarzyna; Fice, Martyn J; Ponnampalam, Lalitha; Graham, Chris S; Wonfor, Adrian; Seeds, Alwyn J; Renaud, Cyril C

2017-07-24

This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.

Fabrication of micro- and nanometre-scale polymer structures in liquid crystal devices for next generation photonics applications

Science.gov (United States)

Tartan, Chloe C.; Salter, Patrick S.; Booth, Martin J.; Morris, Stephen M.; Elston, Steve J.

2016-09-01

Direct Laser Writing (DLW) by two-photon photopolymerization (TPP) enables the fabrication of micron-scale polymeric structures in soft matter systems. The technique has implications in a broad range of optics and photonics; in particular fast-switching liquid crystal (LC) modes for the development of next generation display technologies. In this paper, we report two different methodologies using our TPP-based fabrication technique. Two explicit examples are provided of voltage-dependent LC director profiles that are inherently unstable, but which appear to be promising candidates for fast-switching photonics applications. In the first instance, 1 μm-thick periodic walls of polymer network are written into a planar aligned (parallel rubbed) nematic pi-cell device containing a nematic LC-monomer mixture. The structures are fabricated when the device is electrically driven into a fast-switching nematic LC state and aberrations induced by the device substrates are corrected for by virtue of the adaptive optics elements included within the DLW setup. Optical polarizing microscopy images taken post-fabrication reveal that polymer walls oriented perpendicular to the rubbing direction promote the stability of the so-called optically compensated bend mode upon removal of the externally applied field. In the second case, polymer walls are written in a nematic LC-optically adhesive glue mixture. A polymer- LCs-polymer-slices or `POLICRYPS' template is formed by immersing the device in acetone post-fabrication to remove any remaining non-crosslinked material. Injecting the resultant series of polymer microchannels ( 1 μm-thick) with a short-pitch, chiral nematic LC mixture leads to the spontaneous alignment of a fast-switching chiral nematic mode, where the helical axis lies parallel to the glass substrates. Optimal contrast between the bright and dark states of the uniform lying helix alignment is achieved when the structures are spaced at the order of the device thickness

Ka-band to L-band frequency down-conversion based on III-V-on-silicon photonic integrated circuits

Science.gov (United States)

Van Gasse, K.; Wang, Z.; Uvin, S.; De Deckere, B.; Mariën, J.; Thomassen, L.; Roelkens, G.

2017-12-01

In this work, we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5-30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of - 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

Low-Loss Photonic Reservoir Computing with Multimode Photonic Integrated Circuits.

Science.gov (United States)

Katumba, Andrew; Heyvaert, Jelle; Schneider, Bendix; Uvin, Sarah; Dambre, Joni; Bienstman, Peter

2018-02-08

We present a numerical study of a passive integrated photonics reservoir computing platform based on multimodal Y-junctions. We propose a novel design of this junction where the level of adiabaticity is carefully tailored to capture the radiation loss in higher-order modes, while at the same time providing additional mode mixing that increases the richness of the reservoir dynamics. With this design, we report an overall average combination efficiency of 61% compared to the standard 50% for the single-mode case. We demonstrate that with this design, much more power is able to reach the distant nodes of the reservoir, leading to increased scaling prospects. We use the example of a header recognition task to confirm that such a reservoir can be used for bit-level processing tasks. The design itself is CMOS-compatible and can be fabricated through the known standard fabrication procedures.

Photonic emitters and circuits based on colloidal quantum dot composites

Science.gov (United States)

Menon, Vinod M.; Husaini, Saima; Valappil, Nikesh; Luberto, Matthew

2009-02-01

We discuss our work on light emitters and photonic circuits realized using colloidal quantum dot composites. Specifically we will report our recent work on flexible microcavity laser, microdisk emitters and integrated active - passive waveguides. The entire microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. The microdisk emitters and the integrated waveguide structures were realized using soft lithography and photo-lithography, respectively and were fabricated using a composite consisting of quantum dots embedded in SU8 matrix. Finally, we will discuss the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements. In addition to their specific functionalities, these novel device demonstrations and their development present a low cost alternative to the traditional photonic device fabrication techniques.

Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

Compound FDTD method for silicon photonics

Directory of Open Access Journals (Sweden)

Abbas Olyaee

2011-09-01

Full Text Available Attempt to manufacture photonics devices on silicon requires theoretical and numerical prediction. This essay presents Compound FDTD (C-FDTD method for comprehensive simulation of silicon photonics devices. Although this method is comprehensive, it maintains conventional Yee algorithm. The method involves variation of refractive index due to nonlinear effects. With the help of this simulator, refractive index change due to free-carriers created through two photon absorption and Kerr effect in silicon waveguide is considered. Results indicate how to choose pump pulse shape to optimum operation of active photonics devices. Also conductivity variation of Si waveguide due to change in free-carrier density is studied. By considering variations in conductivity profile, we are able to design better schemes for sweep free carriers away with reverse bias or nonlinear photovoltaic effect for fast devices and Raman amplifiers.

Possibility of producing the event-ready two-photon polarization entangled state with normal photon detectors

International Nuclear Information System (INIS)

Wang Xiangbin

2003-01-01

We propose a scheme to produce the maximally two-photon polarization entangled state with single-photon sources and the passive linear optics devices. In particular, our scheme only requires the normal photon detectors which distinguish the vacuum and non-vacuum Fock number states. A sophisticated photon detector distinguishing between one-photon state and two-photon state is unnecessary in the scheme

Preliminary Results from Integrating Compton Photon Polarimetry in Hall A of Jefferson Lab

International Nuclear Information System (INIS)

Parno, D; Friend, M; Benmokhtar, F; Franklin, G; Quinn, B; Michaels, R; Nanda, S; Souder, P

2011-01-01

A wide range of nucleon and nuclear structure experiments in Jefferson Lab's Hall A require precise, continuous measurements of the polarization of the electron beam. In our Compton polarimeter, electrons are scattered off photons in a Fabry-Perot cavity; by measuring an asymmetry in the integrated signal of the scattered photons detected in a GSO crystal, we can make non-invasive, continuous measurements of the beam polarization. Our goal is to achieve 1% statistical error within two hours of running. We discuss the design and commissioning of an upgrade to this apparatus, and report preliminary results for experiments conducted at beam energies from 3.5 to 5.9 GeV and photon rates from 5 to 100 kHz.

CMOS and BiCMOS process integration and device characterization

CERN Document Server

El-Kareh, Badih

2009-01-01

Covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. This book also covers silicon devices and integrated process technologies. It discusses modern silicon devices, their characteristics, and interactions with process parameters.

Engineering photonic and plasmonic light emission enhancement

Science.gov (United States)

Lawrence, Nathaniel

Semiconductor photonic devices are a rapidly maturing technology which currently occupy multi-billion dollar markets in the areas of LED lighting and optical data communication. LEDs currently demonstrate the highest luminous efficiency of any light source for general lighting. Long-haul optical data communication currently forms the backbone of the global communication network. Proper design of light management is required for photonic devices, which can increase the overall efficiency or add new device functionality. In this thesis, novel methods for the control of light propagation and confinement are developed for the use in integrated photonic devices. The first part of this work focuses on the engineering of field confinement within deep subwavelength plasmonic resonators for the enhancement of light-matter interaction. In this section, plasmonic ring nanocavities are shown to form gap plasmon modes confined to the dielectric region between two metal layers. The scattering properties, near-field enhancement and photonic density of states of nanocavity devices are studied using analytic theory and 3D finite difference time domain simulations. Plasmonic ring nanocavities are fabricated and characterized using photoluminescence intensity and decay rate measurements. A 25 times increase in the radiative decay rate of Er:Si02 is demonstrated in nanocavities where light is confined to volumes as small as 0.01( ln )3. The potential to achieve lasing, due to the enhancement of stimulated emission rate in ring nanocavities, is studied as a route to Si-compatible plasmon-enhanced nanolasers. The second part of this work focuses on the manipulation of light generated in planar semiconductor devices using arrays of dielectric nanopillars. In particular, aperiodic arrays of nanopillars are engineered for omnidirectional light extraction enhancement. Arrays of Er:SiNx, nanopillars are fabricated and a ten times increase in light extraction is experimentally demonstrated

Integrated Solar-Energy-Harvesting and -Storage Device

Science.gov (United States)

whitacre, Jay; Fleurial, Jean-Pierre; Mojarradi, Mohammed; Johnson, Travis; Ryan, Margaret Amy; Bugga, Ratnakumar; West, William; Surampudi, Subbarao; Blosiu, Julian

2004-01-01

A modular, integrated, completely solid-state system designed to harvest and store solar energy is under development. Called the power tile, the hybrid device consists of a photovoltaic cell, a battery, a thermoelectric device, and a charge-control circuit that are heterogeneously integrated to maximize specific energy capacity and efficiency. Power tiles could be used in a variety of space and terrestrial environments and would be designed to function with maximum efficiency in the presence of anticipated temperatures, temperature gradients, and cycles of sunlight and shadow. Because they are modular in nature, one could use a single power tile or could construct an array of as many tiles as needed. If multiple tiles are used in an array, the distributed and redundant nature of the charge control and distribution hardware provides an extremely fault-tolerant system. The figure presents a schematic view of the device.

Free-standing GaN grating couplers and rib waveguide for planar photonics at telecommunication wavelength

Science.gov (United States)

Liu, Qifa; Wang, Wei

2018-01-01

Gallium Nitride (GaN) free-standing planar photonic device at telecommunication wavelength based on GaN-on-silicon platform was presented. The free-standing structure was realized by particular double-side fabrication process, which combining GaN front patterning, Si substrate back releasing and GaN slab etching. The actual device parameters were identified via the physical characterizations employing scanning electron microscope (SEM), atomic force microscope (AFM) and reflectance spectra testing. High coupling efficiency and good light confinement properties of the gratings and rib waveguide at telecommunication wavelength range were verified by finite element method (FEM) simulation. This work illustrates the potential of new GaN photonic structure which will enable new functions for planar photonics in communication and sensing applications, and is favorable for the realization of integrated optical circuit.

Integrating Touch-Enabled and Mobile Devices into Contemporary Mathematics Education

Science.gov (United States)

Meletiou-Mavrotheris, Maria, Ed.; Mavrou, Katerina, Ed.; Paparistodemou, Efi, Ed.

2015-01-01

Despite increased interest in mobile devices as learning tools, the amount of available primary research studies on their integration into mathematics teaching and learning is still relatively small due to the novelty of these technologies. "Integrating Touch-Enabled and Mobile Devices into Contemporary Mathematics Education" presents…

Fabrication of 3-D Photonic Band Gap Crystals Via Colloidal Self-Assembly

Science.gov (United States)

Subramaniam, Girija; Blank, Shannon

2005-01-01

The behavior of photons in a Photonic Crystals, PCs, is like that of electrons in a semiconductor in that, it prohibits light propagation over a band of frequencies, called Photonic Band Gap, PBG. Photons cannot exist in these band gaps like the forbidden bands of electrons. Thus, PCs lend themselves as potential candidates for devices based on the gap phenomenon. The popular research on PCs stem from their ability to confine light with minimal losses. Large scale 3-D PCs with a PBG in the visible or near infra red region will make optical transistors and sharp bent optical fibers. Efforts are directed to use PCs for information processing and it is not long before we can have optical integrated circuits in the place of electronic ones.

A full-duplex working integrated optoelectronic device for optical interconnect

Science.gov (United States)

Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

2018-05-01

In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

Photonic integrated circuits unveil crisis-induced intermittency.

Science.gov (United States)

Karsaklian Dal Bosco, Andreas; Akizawa, Yasuhiro; Kanno, Kazutaka; Uchida, Atsushi; Harayama, Takahisa; Yoshimura, Kazuyuki

2016-09-19

We experimentally investigate an intermittent route to chaos in a photonic integrated circuit consisting of a semiconductor laser with time-delayed optical feedback from a short external cavity. The transition from a period-doubling dynamics to a fully-developed chaos reveals a stage intermittently exhibiting these two dynamics. We unveil the bifurcation mechanism underlying this route to chaos by using the Lang-Kobayashi model and demonstrate that the process is based on a phenomenon of attractor expansion initiated by a particular distribution of the local Lyapunov exponents. We emphasize on the crucial importance of the distribution of the steady-state solutions introduced by the time-delayed feedback on the existence of this intermittent dynamics.

A hybrid approach to device integration on a genetic analysis platform

International Nuclear Information System (INIS)

Brennan, Des; Justice, John; Aherne, Margaret; Galvin, Paul; Jary, Dorothee; Kurg, Ants; Berik, Evgeny; Macek, Milan

2012-01-01

Point-of-care (POC) systems require significant component integration to implement biochemical protocols associated with molecular diagnostic assays. Hybrid platforms where discrete components are combined in a single platform are a suitable approach to integration, where combining multiple device fabrication steps on a single substrate is not possible due to incompatible or costly fabrication steps. We integrate three devices each with a specific system functionality: (i) a silicon electro-wetting-on-dielectric (EWOD) device to move and mix sample and reagent droplets in an oil phase, (ii) a polymer microfluidic chip containing channels and reservoirs and (iii) an aqueous phase glass microarray for fluorescence microarray hybridization detection. The EWOD device offers the possibility of fully integrating on-chip sample preparation using nanolitre sample and reagent volumes. A key challenge is sample transfer from the oil phase EWOD device to the aqueous phase microarray for hybridization detection. The EWOD device, waveguide performance and functionality are maintained during the integration process. An on-chip biochemical protocol for arrayed primer extension (APEX) was implemented for single nucleotide polymorphism (SNiP) analysis. The prepared sample is aspirated from the EWOD oil phase to the aqueous phase microarray for hybridization. A bench-top instrumentation system was also developed around the integrated platform to drive the EWOD electrodes, implement APEX sample heating and image the microarray after hybridization. (paper)

Multi-photon absorption limits to heralded single photon sources

Science.gov (United States)

Husko, Chad A.; Clark, Alex S.; Collins, Matthew J.; De Rossi, Alfredo; Combrié, Sylvain; Lehoucq, Gaëlle; Rey, Isabella H.; Krauss, Thomas F.; Xiong, Chunle; Eggleton, Benjamin J.

2013-01-01

Single photons are of paramount importance to future quantum technologies, including quantum communication and computation. Nonlinear photonic devices using parametric processes offer a straightforward route to generating photons, however additional nonlinear processes may come into play and interfere with these sources. Here we analyse spontaneous four-wave mixing (SFWM) sources in the presence of multi-photon processes. We conduct experiments in silicon and gallium indium phosphide photonic crystal waveguides which display inherently different nonlinear absorption processes, namely two-photon (TPA) and three-photon absorption (ThPA), respectively. We develop a novel model capturing these diverse effects which is in excellent quantitative agreement with measurements of brightness, coincidence-to-accidental ratio (CAR) and second-order correlation function g(2)(0), showing that TPA imposes an intrinsic limit on heralded single photon sources. We build on these observations to devise a new metric, the quantum utility (QMU), enabling further optimisation of single photon sources. PMID:24186400

Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

Science.gov (United States)

Kemiche, Malik; Lhuillier, Jérémy; Callard, Ségolène; Monat, Christelle

2018-01-01

We exploit slow light (high ng) modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28), this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate) of the pulsed laser signal.

Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

Directory of Open Access Journals (Sweden)

Malik Kemiche

2018-01-01

Full Text Available We exploit slow light (high ng modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28, this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate of the pulsed laser signal.

Programmable dispersion on a photonic integrated circuit for classical and quantum applications.