WorldWideScience

Sample records for integrated photonic devices

  1. Integrated Ultrasonic-Photonic Devices

    DEFF Research Database (Denmark)

    Barretto, Elaine Cristina Saraiva

    in channel waveguides and Mach-Zehnder interferometers. Numerical models are developed based on the finite element method, and applied to several scenarios, such as optimization of the geometrical parameters of waveguides, use of slow light in photonic crystal waveguides and use of Lamb waves in membranized......This thesis deals with the modeling, design, fabrication and characterization of integrated ultrasonic-photonic devices, with particular focus on the use of standard semiconductor materials such as GaAs and silicon. The devices are based on the use of guided acoustic waves to modulate the light...... investigated. Comparisons are made with the numerical and experimental results, and they validate the obtained response of the acoustic and photonic components of the device. Finally, a new design for an optical frequency shifter is proposed, posing several advantages over existing devices in terms of size...

  2. Quantum communications system with integrated photonic devices

    Science.gov (United States)

    Nordholt, Jane E.; Peterson, Charles Glen; Newell, Raymond Thorson; Hughes, Richard John

    2017-11-14

    Security is increased in quantum communication (QC) systems lacking a true single-photon laser source by encoding a transmitted optical signal with two or more decoy-states. A variable attenuator or amplitude modulator randomly imposes average photon values onto the optical signal based on data input and the predetermined decoy-states. By measuring and comparing photon distributions for a received QC signal, a single-photon transmittance is estimated. Fiber birefringence is compensated by applying polarization modulation. A transmitter can be configured to transmit in conjugate polarization bases whose states of polarization (SOPs) can be represented as equidistant points on a great circle on the Poincare sphere so that the received SOPs are mapped to equidistant points on a great circle and routed to corresponding detectors. Transmitters are implemented in quantum communication cards and can be assembled from micro-optical components, or transmitter components can be fabricated as part of a monolithic or hybrid chip-scale circuit.

  3. Si light-emitting device in integrated photonic CMOS ICs

    Science.gov (United States)

    Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

    2017-07-01

    The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

  4. Integrated Photonic Devices Incorporating Low-Loss Fluorinated Polymer Materials

    Directory of Open Access Journals (Sweden)

    Hyung-Jong Lee

    2011-06-01

    Full Text Available Low-loss polymer materials incorporating fluorinated compounds have been utilized for the investigation of various functional optical devices useful for optical communication and optical sensor systems. Since reliability issues concerning the polymer device have been resolved, polymeric waveguide devices have been gradually adopted for commercial application systems. The two most successfully commercialized polymeric integrated optic devices, variable optical attenuators and digital optical switches, are reviewed in this paper. Utilizing unique properties of optical polymers which are not available in other optical materials, novel polymeric optical devices are proposed including widely tunable external cavity lasers and integrated optical current sensors.

  5. Physics of photonic devices

    CERN Document Server

    Chuang, Shun Lien

    2009-01-01

    The most up-to-date book available on the physics of photonic devices This new edition of Physics of Photonic Devices incorporates significant advancements in the field of photonics that have occurred since publication of the first edition (Physics of Optoelectronic Devices). New topics covered include a brief history of the invention of semiconductor lasers, the Lorentz dipole method and metal plasmas, matrix optics, surface plasma waveguides, optical ring resonators, integrated electroabsorption modulator-lasers, and solar cells. It also introduces exciting new fields of research such as:

  6. Photonic Integrated Circuits

    Science.gov (United States)

    Krainak, Michael; Merritt, Scott

    2016-01-01

    Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

  7. Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications

    NARCIS (Netherlands)

    Latkowski, S.; van Veldhoven, P.J.; Hänsel, A.; D'Agostino, D.; Rabbani-Haghighi, H.; Docter, B.; Bhattacharya, N.; Thijs, P.J.A.; Ambrosius, H.P.M.M.; Smit, M.K.; Williams, K.A.; Bente, E.A.J.M.

    2017-01-01

    In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar,

  8. Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects

    Science.gov (United States)

    Alt, Shannon

    2016-01-01

    Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.

  9. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices.

    Science.gov (United States)

    Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F; Ross, Caroline A

    2013-11-08

    Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO₂ -δ , Co- or Fe-substituted SrTiO 3- δ , as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti 0.2 Ga 0.4 Fe 0.4 )O 3- δ and polycrystalline (CeY₂)Fe₅O 12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY₂)Fe₅O 12 /silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  10. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

    Directory of Open Access Journals (Sweden)

    Mehmet Cengiz Onbasli

    2013-11-01

    Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  11. CMOS-compatible photonic devices for single-photon generation

    Directory of Open Access Journals (Sweden)

    Xiong Chunle

    2016-09-01

    Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  12. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexei; Pagnoux, Dominique

    2008-01-01

    Just like the periodical crystalline potential in solid state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as cages for storing, filtering or guiding light at the wavelength scale paves the way to the realization of optical and optoelectronic devices with ultimate properties and dimensions. This will contribute towards meeting the demands for greater miniaturization imposed by the processing of an ever increasing number of data. Photonic Crystals will provide students and researchers from different fields with the theoretical background required for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, ranging from optics to microwaves, where photonic crystals have found application. As such, it aims at building bridges between...

  13. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexis

    2005-01-01

    Just like the periodical crystalline potential in solid-state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as a cage for storing, filtering or guiding light at the wavelength scale thus paves the way to the realisation of optical and optoelectronic devices with ultimate properties and dimensions. This should contribute toward meeting the demands for a greater miniaturisation that the processing of an ever increasing number of data requires. Photonic Crystals intends at providing students and researchers from different fields with the theoretical background needed for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, from optics to microwaves, where photonic crystals have found applications. As such, it aims at building brid...

  14. Micro- and nano-scale optical devices for high density photonic integrated circuits at near-infrared wavelengths

    Science.gov (United States)

    Chatterjee, Rohit

    In this research work, we explore fundamental silicon-based active and passive photonic devices that can be integrated together to form functional photonic integrated circuits. The devices which include power splitters, switches and lenses are studied starting from their physics, their design and fabrication techniques and finally from an experimental standpoint. The experimental results reveal high performance devices that are compatible with standard CMOS fabrication processes and can be easily integrated with other devices for near infrared telecom applications. In Chapter 2, a novel method for optical switching using nanomechanical proximity perturbation technique is described and demonstrated. The method which is experimentally demonstrated employs relatively low powers, small chip footprint and is compatible with standard CMOS fabrication processes. Further, in Chapter 3, this method is applied to develop a hitless bypass switch aimed at solving an important issue in current wavelength division multiplexing systems namely hitless switching of reconfigurable optical add drop multiplexers. Experimental results are presented to demonstrate the application of the nanomechanical proximity perturbation technique to practical situations. In Chapter 4, a fundamental photonic component namely the power splitter is described. Power splitters are important components for any photonic integrated circuits because they help split the power from a single light source to multiple devices on the same chip so that different operations can be performed simultaneously. The power splitters demonstrated in this chapter are based on multimode interference principles resulting in highly compact low loss and highly uniform power splitting to split the power of the light from a single channel to two and four channels. These devices can further be scaled to achieve higher order splitting such as 1x16 and 1x32 power splits. Finally in Chapter 5 we overcome challenges in device

  15. Towards THz integrated photonics

    OpenAIRE

    Hübers, Heinz-Wilhelm

    2010-01-01

    The demonstration of an integrated terahertz transceiver featuring a quantum cascade laser and a Schottky diode mixer promises new applications for compact and convenient terahertz photonic instrumentation.

  16. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  17. Integrated Microwave Photonics

    OpenAIRE

    Marpaung, David; Roeloffzen, Chris; Heideman, René; Leinse, Arne; Sales Maicas, Salvador; Capmany Francoy, José

    2013-01-01

    Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A particular aspect that recently gains significant interests is the use of photonic integrated circuit (PIC) technology in the MWP field for enhanced functionalities and robustness as well as the r...

  18. Infrared detection and photon energy up-conversion in graphene layer infrared photodetectors integrated with LEDs based on van der Waals heterostructures: Concept, device model, and characteristics

    Science.gov (United States)

    Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Karasik, V. E.; Shur, M. S.

    2017-09-01

    We propose the concept of the infrared detection and photon energy up-conversion in the devices using the integration of the graphene layer infrared detectors (GLIPs) and the light emitting diodes (LEDs) based on van der Waals (vdW) heterostructures. Using the developed device model of the GLIP-LEDs, we calculate their characteristics. The GLIP-LED devices can operate as the detectors of far- and mid infrared radiation (FIR and MIR) with an electrical output or with near-infrared radiation (NIR) or visible radiation (VIR) output. In the latter case, GLIP-LED devices function as the photon energy up-converters of FIR and MIR to NIR or VIR. The operation of GLIP-LED devices is associated with the injection of the electron photocurrent produced due to the interband absorption of the FIR/MIR photons in the GLIP part into the LED emitting NIR/VIR photons. We calculate the GLIP-LED responsivity and up-conversion efficiency as functions the structure parameters and the energies of the incident FIR/MIR photons and the output NIR/VIR photons. The advantages of the GLs in the vdW heterostructures (relatively high photoexcitation rate from and low capture efficiency into GLs) combined with the reabsorption of a fraction of the NIR/FIR photon flux in the GLIP (which can enable an effective photonic feedback) result in the elevated GLIP-LED device responsivity and up-conversion efficiency. The positive optical feedback from the LED section of the device lead to increasing current injection enabling the appearance of the S-type current-voltage characteristic with a greatly enhanced responsivity near the switching point and current filamentation.

  19. Toward biomaterial-based implantable photonic devices

    Directory of Open Access Journals (Sweden)

    Humar Matjaž

    2017-03-01

    Full Text Available Optical technologies are essential for the rapid and efficient delivery of health care to patients. Efforts have begun to implement these technologies in miniature devices that are implantable in patients for continuous or chronic uses. In this review, we discuss guidelines for biomaterials suitable for use in vivo. Basic optical functions such as focusing, reflection, and diffraction have been realized with biopolymers. Biocompatible optical fibers can deliver sensing or therapeutic-inducing light into tissues and enable optical communications with implanted photonic devices. Wirelessly powered, light-emitting diodes (LEDs and miniature lasers made of biocompatible materials may offer new approaches in optical sensing and therapy. Advances in biotechnologies, such as optogenetics, enable more sophisticated photonic devices with a high level of integration with neurological or physiological circuits. With further innovations and translational development, implantable photonic devices offer a pathway to improve health monitoring, diagnostics, and light-activated therapies.

  20. Quantum photonics hybrid integration platform

    Energy Technology Data Exchange (ETDEWEB)

    Murray, E.; Floether, F. F. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ellis, D. J. P.; Meany, T.; Bennett, A. J., E-mail: anthony.bennet@crl.toshiba.co.uk; Shields, A. J. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Lee, J. P. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Engineering Department, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Griffiths, J. P.; Jones, G. A. C.; Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2015-10-26

    Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single-photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to a SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO{sub 2} cladding. A tuneable Mach Zehnder interferometer (MZI) modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single-photon nature of the emission was verified using the on-chip MZI as a beamsplitter in a Hanbury Brown and Twiss measurement.

  1. Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

    Science.gov (United States)

    Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

    2018-02-01

    A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

  2. Integrated Magneto-Optical Devices for On-Chip Photonic Systems

    Science.gov (United States)

    2017-09-01

    Technology SEPTEMBER 2017 Final Report Approved for public release; distribution is unlimited. See additional restrictions described on inside pages STINFO...PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER Massachusetts Institute of Technology 77 Massachusetts Avenue...interferometer (MZI) isolator devices based on optical modeling, for both transverse- electric (TE) and transverse-magnetic (TM) polarization. 15. SUBJECT TERMS

  3. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  4. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  5. Photonic integration and photonics-electronics convergence on silicon platform

    CERN Document Server

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  6. Photonic crystals: towards nanoscale photonic devices

    National Research Council Canada - National Science Library

    Lourtioz, J.-M

    2005-01-01

    .... From this point of view, the emergence of photonic bandgap materials and photonic crystals at the end of the 1980s can be seen as a revenge to the benefit this time of optics and electromagnetism. In the same way as the periodicity of solid state crystals determines the energy bands and the conduction properties of electrons, the periodical structur...

  7. Bridging ultrahigh-Q devices and photonic circuits

    Science.gov (United States)

    Yang, Ki Youl; Oh, Dong Yoon; Lee, Seung Hoon; Yang, Qi-Fan; Yi, Xu; Shen, Boqiang; Wang, Heming; Vahala, Kerry

    2018-05-01

    Optical microresonators are essential to a broad range of technologies and scientific disciplines. However, many of their applications rely on discrete devices to attain challenging combinations of ultra-low-loss performance (ultrahigh Q) and resonator design requirements. This prevents access to scalable fabrication methods for photonic integration and lithographic feature control. Indeed, finding a microfabrication bridge that connects ultrahigh-Q device functions with photonic circuits is a priority of the microcavity field. Here, an integrated resonator having a record Q factor over 200 million is presented. Its ultra-low-loss and flexible cavity design brings performance to integrated systems that has been the exclusive domain of discrete silica and crystalline microcavity devices. Two distinctly different devices are demonstrated: soliton sources with electronic repetition rates and high-coherence/low-threshold Brillouin lasers. This multi-device capability and performance from a single integrated cavity platform represents a critical advance for future photonic circuits and systems.

  8. Ge-rich graded-index Si1-xGex devices for MID-IR integrated photonics

    Science.gov (United States)

    Ramirez, J. M.; Vakarin, V.; Liu, Q.; Frigerio, J.; Ballabio, A.; Le Roux, X.; Benedikovic, D.; Alonso-Ramos, C.; Isella, G.; Vivien, L.; Marris-Morini, D.

    2018-02-01

    Mid-infrared (mid-IR) silicon photonics is becoming a prominent research with remarkable potential in several applications such as in early medical diagnosis, safe communications, imaging, food safety and many more. In the quest for the best material platform to develop new photonic systems, Si and Ge depart with a notable advantage over other materials due to the high processing maturity accomplished during the last part of the 20th century through the deployment of the CMOS technology. From an optical viewpoint, combining Si with Ge to obtain SiGe alloys with controlled stoichiometry is also of interest for the photonic community since permits to increase the effective refractive index and the nonlinear parameter, providing a fascinating playground to exploit nonlinear effects. Furthermore, using Ge-rich SiGe gives access to a range of deep mid-IR wavelengths otherwise inaccessible (λ 2-20 μm). In this paper, we explore for the first time the limits of this approach by measuring the spectral loss characteristic over a broadband wavelength range spanning from λ = 5.5 μm to 8.5 μm. Three different SiGe waveguide platforms are compared, each one showing higher compactness than the preceding through the engineering of the vertical Ge profile, giving rise to different confinement characteristics to the propagating modes. A flat propagation loss characteristic of 2-3 dB/cm over the entire wavelength span is demonstrated in Ge-rich graded-index SiGe waveguides of only 6 μm thick. Also, the role of the overlap fraction of the confined optical mode with the Si-rich area at the bottom side of the epitaxial SiGe waveguide is put in perspective, revealing a lossy characteristic compared to the other designs were the optical mode is located in the Ge-rich area at the top of the waveguide uniquely. These Ge-rich graded-index SiGe waveguides may pave the way towards a new generation of photonic integrated circuits operating at deep mid-IR wavelengths.

  9. Fast broad-band photon detector based on quantum well devices and charge-integrating electronics for non-invasive FEL monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Antonelli, M., E-mail: matias.antonelli@elettra.eu; Cautero, G.; Sergo, R.; Castellaro, C.; Menk, R. H. [Elettra – Sincrotrone Trieste S.C.p.A., Trieste (Italy); Ganbold, T. [School in Nanotechnology, University of Trieste, Trieste (Italy); IOM CNR, Laboratorio TASC, Trieste (Italy); Biasiol, G. [IOM CNR, Laboratorio TASC, Trieste (Italy)

    2016-07-27

    The recent evolution of free-electron lasers has not been matched by the development of adequate beam-monitoring instrumentation. However, for both experimental and diagnostics purposes, it is crucial to keep such photon beams under control, avoiding at the same time the absorption of the beam and the possible destruction of the detector. These requirements can be fulfilled by utilizing fast and non-invasive photon detectors operated in situ, upstream from the experimental station. From this perspective, sensors based on Quantum Well (QW) devices can be the key to detecting ultra-short light pulses. In fact, owing to their high electron mobility, InGaAs/InAlAs QW devices operated at room temperature exhibit sub-nanosecond response times. Their direct, low-energy band gap renders them capable of detecting photons ranging from visible to X-ray. Furthermore, the 2D electron gas forming inside the QW is responsible for a charge amplification mechanism, which increases the charge collection efficiency of these devices. In order to acquire the signals produced by these QW sensors, a novel readout electronics has been developed. It is based on a high-speed charge integrator, which allows short, low-intensity current pulses to be read within a 50-ns window. The integrated signal is acquired through an ADC and the entire process can be performed at a 10-MHz repetition rate. This work provides a detailed description of the development of the QW detectors and the acquisition electronics, as well as reporting the main experimental results, which show how these tools are well suited for the realization of fast, broad-band beam monitors.

  10. Integrated microwave photonics

    NARCIS (Netherlands)

    Marpaung, D.A.I.; Roeloffzen, C.G.H.; Heideman, Rene; Leinse, Arne; Sales, S.; Capmany, J.

    2013-01-01

    Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A

  11. High-order passive photonic temporal integrators.

    Science.gov (United States)

    Asghari, Mohammad H; Wang, Chao; Yao, Jianping; Azaña, José

    2010-04-15

    We experimentally demonstrate, for the first time to our knowledge, an ultrafast photonic high-order (second-order) complex-field temporal integrator. The demonstrated device uses a single apodized uniform-period fiber Bragg grating (FBG), and it is based on a general FBG design approach for implementing optimized arbitrary-order photonic passive temporal integrators. Using this same design approach, we also fabricate and test a first-order passive temporal integrator offering an energetic-efficiency improvement of more than 1 order of magnitude as compared with previously reported passive first-order temporal integrators. Accurate and efficient first- and second-order temporal integrations of ultrafast complex-field optical signals (with temporal features as fast as approximately 2.5ps) are successfully demonstrated using the fabricated FBG devices.

  12. Organic membrane photonic integrated circuits (OMPICs).

    Science.gov (United States)

    Amemiya, Tomohiro; Kanazawa, Toru; Hiratani, Takuo; Inoue, Daisuke; Gu, Zhichen; Yamasaki, Satoshi; Urakami, Tatsuhiro; Arai, Shigehisa

    2017-08-07

    We propose the concept of organic membrane photonic integrated circuits (OMPICs), which incorporate various functions needed for optical signal processing into a flexible organic membrane. We describe the structure of several devices used within the proposed OMPICs (e.g., transmission lines, I/O couplers, phase shifters, photodetectors, modulators), and theoretically investigate their characteristics. We then present a method of fabricating the photonic devices monolithically in an organic membrane and demonstrate the operation of transmission lines and I/O couplers, the most basic elements of OMPICs.

  13. Advances on integrated microwave photonics

    DEFF Research Database (Denmark)

    Dong, Jianji; Liao, Shasha; Yan, Siqi

    2017-01-01

    Integrated microwave photonics has attracted a lot of attentions and makes significant improvement in last 10 years. We have proposed and demonstrated several schemes about microwave photonics including waveform generation, signal processing and energy-efficient micro-heaters. Our schemes are all...

  14. Integrated photonics using colloidal quantum dots

    Science.gov (United States)

    Menon, Vinod M.; Husaini, Saima; Okoye, Nicky; Valappil, Nikesh V.

    2009-11-01

    Integrated photonic devices were realized using colloidal quantum dot composites such as flexible microcavity laser, microdisk emitters and integrated active-passive waveguides. The microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. Planar photonic devices consisting of vertically coupled microring resonators, microdisk emitters, active-passive integrated waveguide structures and coupled active microdisk resonators were realized using soft lithography, photo-lithography, and electron beam lithography, respectively. The gain medium in all these devices was a composite consisting of quantum dots embedded in SU8 matrix. Finally, the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements was determined. In addition to their specific functionalities, these novel device demonstrations and their development present a low-cost alternative to the traditional photonic device fabrication techniques.

  15. Flexible manufacturing for photonics device assembly

    International Nuclear Information System (INIS)

    Lu, Shin-yee; Young, K.D.

    1994-01-01

    The assembly of photonics devices such as laser diodes, optical modulators, and optoelectronics (OE) multi-chip modules usually requires the placement of micron-size devices, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (pigtailing). This is a labor-intensive process. Studies done by the OE industry have shown that 95% of the cost of a pigtailed photonic device is attributed to the current practice of manual alignment and bonding techniques. At Lawrence Livermore National Laboratory, the authors are working to reduce the cost of packaging OE devices, through the use of automation

  16. Photonic devices prepared by embossing in PDMS

    Energy Technology Data Exchange (ETDEWEB)

    Jandura, D., E-mail: jandura@fyzika.uniza.sk; Pudis, D.; Berezina, S.

    2017-02-15

    Highlights: • Fabrication technology of photonic devices based on embossing in PDMS is presented. • Analysis of morphological properties of prepared devices in PDMS by CLSM and AFM. • Spectral characterization of PDMS ring resonator proved the resonator functionality. - Abstract: In this paper, we present useful technique for fabrication of novel photonic devices created in the polydimethylsiloxane (PDMS). We use combination of direct laser writing in thin photoresist layer with embossing process of liquid PDMS. We prepared ring resonator and Mach-Zehnder interferometer in PDMS. The shape of prepared PDMS photonic devices was analyzed by confocal laser microscope and atomic force microscope. Optical characterization of these devices reveals extinction ratios of up to 20 dB.

  17. Mid-infrared integrated photonics on silicon: a perspective

    Directory of Open Access Journals (Sweden)

    Lin Hongtao

    2017-12-01

    Full Text Available The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

  18. Liquid Crystal photonic Bandgap Fiber Devices

    DEFF Research Database (Denmark)

    Wei, Lei

    In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure. The prese......In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure...... of each LCPBG fiber. Finally, the applications for LCPBG fiber devices based on the on-chip platform design have been demonstrated in realizing microwave true-time delay and creating an electrically tunable fiber laser. Referatet mailes...

  19. Insertion devices at the advanced photon source

    International Nuclear Information System (INIS)

    Moog, E.R.

    1996-01-01

    The insertion devices being installed at the Advanced Photon Source cause the stored particle beam to wiggle, emitting x-rays with each wiggle. These x-rays combine to make an intense beam of radiation. Both wiggler and undulator types of insertion devices are being installed; the characteristics of the radiation produced by these two types of insertion devices are discussed, along with the reasons for those characteristics

  20. Technical Assessment: Integrated Photonics

    Science.gov (United States)

    2015-10-01

    and resources we routinely demand are predicated on the delivery of high-bandwidth services. At the same time, new computing paradigms such as cloud ...state of the art IPCs onshore. Recommendation 11: Continue to implement policies designed to ensure production integrity of IPC technology. This...operators include both content providers such as Netflix, and Amazon , and neutral providers such as Digital Realty, Equinix, and Rackspace. Cloud operators

  1. Flexible manufacturing for photonics device assembly

    Science.gov (United States)

    Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

    1994-01-01

    The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

  2. Electrically Driven Photonic Crystal Nanocavity Devices

    Science.gov (United States)

    2012-01-01

    material, here gallium arsenide and indium arsenide self- assembled quantum dots (QDs). QDs are preferred for the gain medium because they can have...blue points ) and 150 K (green points ). The black lines are linear fits to the above threshold output power of the lasers, which are used to find the...SHAMBAT et al.: ELECTRICALLY DRIVEN PHOTONIC CRYSTAL NANOCAVITY DEVICES 1707 Fig. 13. (a) Tilted SEM picture of a fabricated triple cavity device. The in

  3. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  4. Organic printed photonics: From microring lasers to integrated circuits.

    Science.gov (United States)

    Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

    2015-09-01

    A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 10(5), which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

  5. Transfer Printed Nanomembranes for Heterogeneously Integrated Membrane Photonics

    Directory of Open Access Journals (Sweden)

    Hongjun Yang

    2015-11-01

    Full Text Available Heterogeneous crystalline semiconductor nanomembrane (NM integration is investigated for single-layer and double-layer Silicon (Si NM photonics, III-V/Si NM lasers, and graphene/Si NM total absorption devices. Both homogeneous and heterogeneous integration are realized by the versatile transfer printing technique. The performance of these integrated membrane devices shows, not only intact optical and electrical characteristics as their bulk counterparts, but also the unique light and matter interactions, such as Fano resonance, slow light, and critical coupling in photonic crystal cavities. Such a heterogeneous integration approach offers tremendous practical application potentials on unconventional, Si CMOS compatible, and high performance optoelectronic systems.

  6. Data readout system utilizing photonic integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Stopiński, S., E-mail: S.Stopinski@tue.nl [COBRA Research Institute, Eindhoven University of Technology (Netherlands); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology (Poland); Malinowski, M.; Piramidowicz, R. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology (Poland); Smit, M.K.; Leijtens, X.J.M. [COBRA Research Institute, Eindhoven University of Technology (Netherlands)

    2013-10-11

    We describe a novel optical solution for data readout systems. The core of the system is an Indium-Phosphide photonic integrated circuit performing as a front-end readout unit. It functions as an optical serializer in which the serialization of the input signal is provided by means of on-chip optical delay lines. The circuit employs electro-optic phase shifters to build amplitude modulators, power splitters for signal distribution, semiconductor optical amplifiers for signal amplification as well as on-chip reflectors. We present the concept of the system, the design and first characterization results of the devices that were fabricated in a multi-project wafer run.

  7. Tutorial: Integrated-photonic switching structures

    Science.gov (United States)

    Soref, Richard

    2018-02-01

    Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

  8. Integrated Optical lightguide device

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

    2005-01-01

    In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

  9. Integrated Optical lightguide device

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

    2000-01-01

    In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

  10. Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits.

    Science.gov (United States)

    Schmidgall, Emma R; Chakravarthi, Srivatsa; Gould, Michael; Christen, Ian R; Hestroffer, Karine; Hatami, Fariba; Fu, Kai-Mei C

    2018-02-14

    Generating entangled graph states of qubits requires high entanglement rates with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.

  11. Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits

    Science.gov (United States)

    Schmidgall, Emma R.; Chakravarthi, Srivatsa; Gould, Michael; Christen, Ian R.; Hestroffer, Karine; Hatami, Fariba; Fu, Kai-Mei C.

    2018-02-01

    Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.

  12. Laser and photonic systems design and integration

    CERN Document Server

    Nof, Shimon Y; Cheng, Gary J

    2014-01-01

    New, significant scientific discoveries in laser and photonic technologies, systems perspectives, and integrated design approaches can improve even further the impact in critical areas of challenge. Yet this knowledge is dispersed across several disciplines and research arenas. Laser and Photonic Systems: Design and Integration brings together a multidisciplinary group of experts to increase understanding of the ways in which systems perspectives may influence laser and photonic innovations and application integration.By bringing together chapters from leading scientists and technologists, ind

  13. Even nanomechanical modes transduced by integrated photonics

    Energy Technology Data Exchange (ETDEWEB)

    Westwood-Bachman, J. N.; Diao, Z.; Sauer, V. T. K.; Hiebert, W. K., E-mail: wayne.hiebert@nrc-cnrc.gc.ca [Department of Physics, University of Alberta, Edmonton T6G 2E1 (Canada); National Institute for Nanotechnology, 11421 Saskatchewan Drive, Edmonton T6G 2M9 (Canada); Bachman, D. [Department of Electrical Engineering, University of Alberta, Edmonton T6G 2V4 (Canada)

    2016-02-08

    We demonstrate the actuation and detection of even flexural vibrational modes of a doubly clamped nanomechanical resonator using an integrated photonics transduction scheme. The doubly clamped beam is formed by releasing a straight section of an optical racetrack resonator from the underlying silicon dioxide layer, and a step is fabricated in the substrate beneath the beam. The step causes uneven force and responsivity distribution along the device length, permitting excitation and detection of even modes of vibration. This is achieved while retaining transduction capability for odd modes. The devices are actuated via optical force applied with a pump laser. The displacement sensitivities of the first through third modes, as obtained from the thermomechanical noise floor, are 228 fm Hz{sup −1/2}, 153 fm Hz{sup −1/2}, and 112 fm Hz{sup −1/2}, respectively. The excitation efficiency for these modes is compared and modeled based on integration of the uneven forces over the mode shapes. While the excitation efficiency for the first three modes is approximately the same when the step occurs at about 38% of the beam length, the ability to tune the modal efficiency of transduction by choosing the step position is discussed. The overall optical force on each mode is approximately 0.4 pN μm{sup −1} mW{sup −1}, for an applied optical power of 0.07 mW. We show a potential application that uses the resonant frequencies of the first two vibrational modes of a buckled beam to measure the stress in the silicon device layer, estimated to be 106 MPa. We anticipate that the observation of the second mode of vibration using our integrated photonics approach will be useful in future mass sensing experiments.

  14. Hybrid Photonic Integration on a Polymer Platform

    Directory of Open Access Journals (Sweden)

    Ziyang Zhang

    2015-09-01

    Full Text Available To fulfill the functionality demands from the fast developing optical networks, a hybrid integration approach allows for combining the advantages of various material platforms. We have established a polymer-based hybrid integration platform (polyboard, which provides flexible optical input/ouptut interfaces (I/Os that allow robust coupling of indium phosphide (InP-based active components, passive insertion of thin-film-based optical elements, and on-chip attachment of optical fibers. This work reviews the recent progress of our polyboard platform. On the fundamental level, multi-core waveguides and polymer/silicon nitride heterogeneous waveguides have been fabricated, broadening device design possibilities and enabling 3D photonic integration. Furthermore, 40-channel optical line terminals and compact, bi-directional optical network units have been developed as highly functional, low-cost devices for the wavelength division multiplexed passive optical network. On a larger scale, thermo-optic elements, thin-film elements and an InP gain chip have been integrated on the polyboard to realize a colorless, dual-polarization optical 90° hybrid as the frontend of a coherent receiver. For high-end applications, a wavelength tunable 100Gbaud transmitter module has been demonstrated, manifesting the joint contribution from the polyboard technology, high speed polymer electro-optic modulator, InP driver electronics and ceramic electronic interconnects.

  15. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

    Science.gov (United States)

    Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

    2017-12-13

    Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

  16. Engineering integrated photonics for heralded quantum gates.

    Science.gov (United States)

    Meany, Thomas; Biggerstaff, Devon N; Broome, Matthew A; Fedrizzi, Alessandro; Delanty, Michael; Steel, M J; Gilchrist, Alexei; Marshall, Graham D; White, Andrew G; Withford, Michael J

    2016-06-10

    Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

  17. Engineering integrated photonics for heralded quantum gates

    Science.gov (United States)

    Meany, Thomas; Biggerstaff, Devon N.; Broome, Matthew A.; Fedrizzi, Alessandro; Delanty, Michael; Steel, M. J.; Gilchrist, Alexei; Marshall, Graham D.; White, Andrew G.; Withford, Michael J.

    2016-06-01

    Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

  18. A monolithic integrated photonic microwave filter

    Science.gov (United States)

    Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

    2017-02-01

    Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

  19. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  20. Photonic integrated circuits: new challenges for lithography

    Science.gov (United States)

    Bolten, Jens; Wahlbrink, Thorsten; Prinzen, Andreas; Porschatis, Caroline; Lerch, Holger; Giesecke, Anna Lena

    2016-10-01

    In this work routes towards the fabrication of photonic integrated circuits (PICs) and the challenges their fabrication poses on lithography, such as large differences in feature dimension of adjacent device features, non-Manhattan-type features, high aspect ratios and significant topographic steps as well as tight lithographic requirements with respect to critical dimension control, line edge roughness and other key figures of merit not only for very small but also for relatively large features, are highlighted. Several ways those challenges are faced in today's low-volume fabrication of PICs, including the concept multi project wafer runs and mix and match approaches, are presented and possible paths towards a real market uptake of PICs are discussed.

  1. Athermal Photonic Devices and Circuits on a Silicon Platform

    Science.gov (United States)

    Raghunathan, Vivek

    In recent years, silicon based optical interconnects has been pursued as an effective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and electronics has been enabled by silicon photonic devices that can be fabricated using CMOS technology. However, high levels of device integration result in significant local and global temperature fluctuations that prove problematic for silicon based photonic devices. In particular, high temperature dependence of Si refractive index (thermo-optic (TO) coefficient) shifts the filter response of resonant devices that limit wavelength resolution in various applications. Active thermal compensation using heaters and thermo-electric coolers are the legacy solution for low density integration. However, the required electrical power, device foot print and number of input/output (I/O) lines limit the integration density. We present a passive approach to an athermal design that involves compensation of positive TO effects from a silicon core by negative TO effects of the polymer cladding. In addition, the design rule involves engineering the waveguide core geometry depending on the resonance wavelength under consideration to ensure desired amount of light in the polymer. We develop exact design requirements for a TO peak stability of 0 pm/K and present prototype performance of 0.5 pm/K. We explore the material design space through initiated chemical vapor deposition (iCVD) of 2 polymer cladding choices. We study the effect of cross-linking on the optical properties of a polymer and establish the superior performance of the co-polymer cladding compared to the homo-polymer. Integration of polymer clad devices in an electronic-photonic architecture requires the possibility of multi-layer stacking capability. We use a low temperature, high density plasma chemical vapor deposition of SiO2/SiN x to hermetically seal the athermal. Further, we employ visible light for

  2. The photonic device for integrated evaluation of collateral circulation of lower extremities in patients with local hypertensive-ischemic pain syndrome

    Science.gov (United States)

    Pavlov, Volodymyr S.; Bezsmernyi, Yurii O.; Zlepko, Sergey M.; Bezsmertna, Halyna V.

    2017-08-01

    The given paper analyzes principles of interaction and analysis of the reflected optical radiation from biotissue in the process of assessment of regional hemodynamics state in patients with local hypertensive- ischemic pain syndrome of amputation stumps of lower extremities, applying the method of photoplethysmography. The purpose is the evaluation of Laser photoplethysmography (LPPG) diagnostic value in examination of patients with chronic ischemia of lower extremities. Photonic device is developed to determine the level of the peripheral blood circulation, which determines the basic parameters of peripheral blood circulation and saturation level. Device consists of two sensors: infrared sensor, which contains the infrared laser radiation source and photodetector, and red sensor, which contains the red radiation source and photodetector. LPPG method allows to determined pulsatility of blood flow in different areas of the foot and lower leg, the degree of compensation and conservation perspectives limb. Surgical treatment of local hypertensive -ischemic pain syndrome of amputation stumps of lower extremities by means of semiclosed fasciotomy in combination with revasculating osteotrepanation enabled to improve considerably regional hemodynamics in the tissues of the stump and decrease pain and hypostatic disorders.

  3. A Microwave Photonic Interference Canceller: Architectures, Systems, and Integration

    Science.gov (United States)

    Chang, Matthew P.

    This thesis is a comprehensive portfolio of work on a Microwave Photonic Self-Interference Canceller (MPC), a specialized optical system designed to eliminate interference from radio-frequency (RF) receivers. The novelty and value of the microwave photonic system lies in its ability to operate over bandwidths and frequencies that are orders of magnitude larger than what is possible using existing RF technology. The work begins, in 2012, with a discrete fiber-optic microwave photonic canceller, which prior work had demonstrated as a proof-of-concept, and culminates, in 2017, with the first ever monolithically integrated microwave photonic canceller. With an eye towards practical implementation, the thesis establishes novelty through three major project thrusts. (Fig. 1): (1) Extensive RF and system analysis to develop a full understanding of how, and through what mechanisms, MPCs affect an RF receiver. The first investigations of how a microwave photonic canceller performs in an actual wireless environment and a digital radio are also presented. (2) New architectures to improve the performance and functionality of MPCs, based on the analysis performed in Thrust 1. A novel balanced microwave photonic canceller architecture is developed and experimentally demonstrated. The balanced architecture shows significant improvements in link gain, noise figure, and dynamic range. Its main advantage is its ability to suppress common-mode noise and reduce noise figure by increasing the optical power. (3) Monolithic integration of the microwave photonic canceller into a photonic integrated circuit. This thrust presents the progression of integrating individual discrete devices into their semiconductor equivalent, as well as a full functional and RF analysis of the first ever integrated microwave photonic canceller.

  4. Integrated Photonics Enabled by Slow Light

    DEFF Research Database (Denmark)

    Mørk, Jesper; Chen, Yuntian; Ek, Sara

    2012-01-01

    In this talk we will discuss the physics of slow light in semiconductor materials and in particular the possibilities offered for integrated photonics. This includes ultra-compact slow light enabled optical amplifiers, lasers and pulse sources.......In this talk we will discuss the physics of slow light in semiconductor materials and in particular the possibilities offered for integrated photonics. This includes ultra-compact slow light enabled optical amplifiers, lasers and pulse sources....

  5. Integrated control rod monitoring device

    International Nuclear Information System (INIS)

    Saito, Katsuhiro

    1997-01-01

    The present invention provides a device in which an entire control rod driving time measuring device and a control rod position support device in a reactor building and a central control chamber are integrated systematically to save hardwares such as a signal input/output device and signal cables between boards. Namely, (1) functions of the entire control rod driving time measuring device for monitoring control rods which control the reactor power and a control rod position indication device are integrated into one identical system. Then, the entire devices can be made compact by the integration of the functions. (2) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated in a central operation board and a board in the site. Then, the place for the installation of them can be used in common in any of the cases. (3) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated to one identical system to save hardware to be used. Then, signal input/output devices and drift branching panel boards in the site and the central operation board can be saved, and cables for connecting both of the boards is no more necessary. (I.S.)

  6. Photonomics: automation approaches yield economic aikido for photonics device manufacture

    Science.gov (United States)

    Jordan, Scott

    2002-09-01

    In the glory days of photonics, with exponentiating demand for photonics devices came exponentiating competition, with new ventures commencing deliveries seemingly weekly. Suddenly the industry was faced with a commodity marketplace well before a commodity cost structure was in place. Economic issues like cost, scalability, yield-call it all "Photonomics" -now drive the industry. Automation and throughput-optimization are obvious answers, but until now, suitable modular tools had not been introduced. Available solutions were barely compatible with typical transverse alignment tolerances and could not automate angular alignments of collimated devices and arrays. And settling physics served as the insoluble bottleneck to throughput and resolution advancement in packaging, characterization and fabrication processes. The industry has addressed these needs in several ways, ranging from special configurations of catalog motion devices to integrated microrobots based on a novel mini-hexapod configuration. This intriguing approach allows tip/tilt alignments to be automated about any point in space, such as a beam waist, a focal point, the cleaved face of a fiber, or the optical axis of a waveguide- ideal for MEMS packaging automation and array alignment. Meanwhile, patented new low-cost settling-enhancement technology has been applied in applications ranging from air-bearing long-travel stages to subnanometer-resolution piezo positioners to advance resolution and process cycle-times in sensitive applications such as optical coupling characterization and fiber Bragg grating generation. Background, examples and metrics are discussed, providing an up-to-date industry overview of available solutions.

  7. Photonic Structure-Integrated Two-Dimensional Material Optoelectronics

    Directory of Open Access Journals (Sweden)

    Tianjiao Wang

    2016-12-01

    Full Text Available The rapid development and unique properties of two-dimensional (2D materials, such as graphene, phosphorene and transition metal dichalcogenides enable them to become intriguing candidates for future optoelectronic applications. To maximize the potential of 2D material-based optoelectronics, various photonic structures are integrated to form photonic structure/2D material hybrid systems so that the device performance can be manipulated in controllable ways. Here, we first introduce the photocurrent-generation mechanisms of 2D material-based optoelectronics and their performance. We then offer an overview and evaluation of the state-of-the-art of hybrid systems, where 2D material optoelectronics are integrated with photonic structures, especially plasmonic nanostructures, photonic waveguides and crystals. By combining with those photonic structures, the performance of 2D material optoelectronics can be further enhanced, and on the other side, a high-performance modulator can be achieved by electrostatically tuning 2D materials. Finally, 2D material-based photodetector can also become an efficient probe to learn the light-matter interactions of photonic structures. Those hybrid systems combine the advantages of 2D materials and photonic structures, providing further capacity for high-performance optoelectronics.

  8. Low dimension structures and devices for new generation photonic technology

    International Nuclear Information System (INIS)

    Zhang, D. H.; Tang, D. Y.; Chen, T. P.; Mei, T.; Yuan, X. C.

    2014-01-01

    Low dimensional structures and devices are the key technological building blocks for new generation of electronic and photonic technology. Such structures and devices show novel properties and can be integrated into systems for wide applications in many areas, including medical, biological and military and advancement of science. In this invited talk, I will present the main results achieved in our competitive research program which aims to explore the application of the mesoscopic structures in light source, manipulation and imaging and integrate them into advanced systems. In the light source aspect, we have for the first time developed graphene mode-locked lasers which are in the process of commercialization. Nanocrystal Si embedded in dielectrics was formed by ion implantation and subsequent annealing. Si light emitting devices with external quantum efficiency of about 2.9×10 −3 % for visible emission were demonstrated at room temperature and the color of emitted light can be tuned electrically from violet to white by varying the injected current. In light manipulation, loss compensation of surface plasmon polaritons (SPPs) using quantum well (QW) gain media was studied theoretically and demonstrated experimentally. The SPP propagation length was effectively elongated several times through electrical pumping. One and two microring resonators based on silicon on insulator and III-V semiconductors technologies have been successfully fabricated and they can be used as filter and switch in the photonic circuit. In imaging, both SPP and low dimension structures are investigated and resolution far beyond diffraction limit in visible range has been realized. The integration of the components in the three aspects into complicated systems is on the way

  9. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  10. Using Protection Layers for a 2-Photon Water Splitting Device

    DEFF Research Database (Denmark)

    Seger, Brian; Mei, Bastian Timo; Frydendal, Rasmus

    2015-01-01

    The 2-photon tandem device for photocatalytic water splitting has been theoretically shown to provide a higher efficiency than a single photon device(1). This increased efficiency can be achieved by having one material optimized to absorb high energy photons (large bandgap) and another material...... optimized to absorb low energy photons (small bandgap). To a large degree this approach has been hindered by corrosion issues. In this talk I will first discuss how our computational screening of 2,400 materials showed that very few materials can efficiently absorb light without corroding in water splitting...

  11. Finite element modeling of micromachined MEMS photon devices

    Science.gov (United States)

    Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

    1999-09-01

    The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

  12. Finite Element Modeling of Micromachined MEMS Photon Devices

    International Nuclear Information System (INIS)

    Datskos, P.G.; Evans, B.M.; Schonberger, D.

    1999-01-01

    The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness

  13. Photonic crystal ring resonator based optical filters for photonic integrated circuits

    International Nuclear Information System (INIS)

    Robinson, S.

    2014-01-01

    In this paper, a two Dimensional (2D) Photonic Crystal Ring Resonator (PCRR) based optical Filters namely Add Drop Filter, Bandpass Filter, and Bandstop Filter are designed for Photonic Integrated Circuits (PICs). The normalized output response of the filters is obtained using 2D Finite Difference Time Domain (FDTD) method and the band diagram of periodic and non-periodic structure is attained by Plane Wave Expansion (PWE) method. The size of the device is minimized from a scale of few tens of millimeters to the order of micrometers. The overall size of the filters is around 11.4 μm × 11.4 μm which is highly suitable of photonic integrated circuits

  14. Integrated microwave photonics for phase modulated systems

    NARCIS (Netherlands)

    Marpaung, D.A.I.; Roeloffzen, C.G.H.

    2012-01-01

    For the last 25 years, microwave photonic (MWP) systems and links have relied almost exclusively on discrete optoelectronic devices, standard optical fibers and fiber-based components. With this concept, various functionalities like RF signal generation, distribution, processing and analysis have

  15. Room-temperature-deposited dielectrics and superconductors for integrated photonics.

    Science.gov (United States)

    Shainline, Jeffrey M; Buckley, Sonia M; Nader, Nima; Gentry, Cale M; Cossel, Kevin C; Cleary, Justin W; Popović, Miloš; Newbury, Nathan R; Nam, Sae Woo; Mirin, Richard P

    2017-05-01

    We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating low cost and high scalability. We have shown low-loss SiN waveguides, high-Q ring resonators, critically coupled ring resonators, 50/50 beam splitters, Mach-Zehnder interferometers (MZIs) and a process-agnostic fiber packaging scheme. We have further explored the utility of this process for applications in nonlinear optics and quantum photonics. We demonstrate spectral tailoring and octave-spanning supercontinuum generation as well as the integration of superconducting nanowire single photon detectors with MZIs and channel-dropping filters. The packaging approach is suitable for operation up to 160 °C as well as below 1 K. The process is well suited for augmentation of existing foundry capabilities or as a stand-alone process.

  16. System-level integration of active silicon photonic biosensors

    Science.gov (United States)

    Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

    2017-02-01

    Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

  17. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  18. Surface wave photonic device based on porous silicon multilayers

    International Nuclear Information System (INIS)

    Guillermain, E.; Lysenko, V.; Benyattou, T.

    2006-01-01

    Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

  19. Biomedical photonics handbook fundamentals, devices, and techniques

    CERN Document Server

    Vo-Dinh, Tuan

    2012-01-01

    Photonics and Tissue OpticsOptical Properties of TissuesJoel Mobley, Tuan Vo-Dinh and Valery TuchinLight-Tissue InteractionsValery V. TuchinTheoretical Models and Algorithms in Optical Diffusion TomographyStephen J. Norton and Tuan Vo-DinhBasic InstrumentationBasic Instrumentation in PhotonicsTuan Vo-DinhOptical Fibers and Waveguides for Medical ApplicationsIsrael Gannot and Moshe Ben DavidFiberoptics Probe DesignUrs Ut

  20. Integrated reconfigurable photonic filters based on interferometric fractional Hilbert transforms.

    Science.gov (United States)

    Sima, C; Cai, B; Liu, B; Gao, Y; Yu, Y; Gates, J C; Zervas, M N; Smith, P G R; Liu, D

    2017-10-01

    In this paper, we present integrated reconfigurable photonic filters using fractional Hilbert transformers (FrHTs) and optical phase tuning structure within the silica-on-silicon platform. The proposed structure, including grating-based FrHTs, an X-coupler, and a pair of thermal tuning filaments, is fabricated through the direct UV grating writing technique. The thermal tuning effect is realized by the controllable microheaters located on the two arms of the X-coupler. We investigate the 200 GHz maximum bandwidth photonic FrHTs based on apodized planar Bragg gratings, and analyze the reflection spectrum responses. Through device integration and thermal modulation, the device could operate as photonic notch filters with 5 GHz linewidth and controllable single sideband suppression filters with measured 12 dB suppression ratio. A 50 GHz instantaneous frequency measuring system using this device is also schematically proposed and analyzed with potential 3 dB measurement improvement. The device could be configured with these multiple functions according to need. The reconfigurable structure has great potential in ultrafast all-optical signal processing fields.

  1. Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

    CERN Document Server

    Ohtsu, Motoichi

    2016-01-01

    This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

  2. Silicon Photonic Integrated Circuit Mode Multiplexer

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2013-01-01

    We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully...

  3. Semiconductor devices for entangled photon pair generation: a review

    Science.gov (United States)

    Orieux, Adeline; Versteegh, Marijn A. M.; Jöns, Klaus D.; Ducci, Sara

    2017-07-01

    Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.

  4. 2-Photon tandem device for water splitting

    DEFF Research Database (Denmark)

    Seger, Brian; Castelli, Ivano Eligio; Vesborg, Peter Christian Kjærgaard

    2014-01-01

    Within the field Of photocatalytic water splitting there are several strategies to achieve the goal of efficient and cheap photocatalytic water splitting. This work examines one particular strategy by focusing on monolithically stacked, two-photon photoelectrochemical cells. The overall aim...... for photocatalytic water splitting by using a large bandgap photocathode and a low bandgap photoanode with attached protection layers....

  5. Silicon Photonics II Components and Integration

    CERN Document Server

    Lockwood, David J

    2011-01-01

    This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

  6. In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

    Science.gov (United States)

    Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

    2017-10-01

    Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

  7. In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon.

    Science.gov (United States)

    Tokel, Onur; Turnali, Ahmet; Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F Ömer

    2017-10-01

    Silicon is an excellent material for microelectronics and integrated photonics1-3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e. , " in-chip" microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.

  8. Silicon photonics design from devices to systems

    CERN Document Server

    Chrostowski, Lukas

    2015-01-01

    From design and simulation through to testing and fabrication, this hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs. In-depth discussion of real-world issues and fabrication challenges ensures that students are fully equipped for careers in industry. Step-by-step tutorials, straightforward examples, and illustrative source code fragments guide students through every aspect of the design process, providing a practical framework for developing and refining key skills. Offering industry-ready expertise, the text supports existing PDKs for CMOS UV-lithography foundry services (OpSIS, ePIXfab, imec, LETI, IME and CMC) and the development of new kits for proprietary processes and clean-room based research. Accompanied by additional online resources to support students, this is the perfect learning package for senior undergraduate and graduate students studying silicon photonics design, and academic and industrial researchers in...

  9. Hybrid integration of carbon nanotubes in silicon photonic structures

    Science.gov (United States)

    Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

    2017-02-01

    Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

  10. Integrable microwave filter based on a photonic crystal delay line.

    Science.gov (United States)

    Sancho, Juan; Bourderionnet, Jerome; Lloret, Juan; Combrié, Sylvain; Gasulla, Ivana; Xavier, Stephane; Sales, Salvador; Colman, Pierre; Lehoucq, Gaelle; Dolfi, Daniel; Capmany, José; De Rossi, Alfredo

    2012-01-01

    The availability of a tunable delay line with a chip-size footprint is a crucial step towards the full implementation of integrated microwave photonic signal processors. Achieving a large and tunable group delay on a millimetre-sized chip is not trivial. Slow light concepts are an appropriate solution, if propagation losses are kept acceptable. Here we use a low-loss 1.5 mm-long photonic crystal waveguide to demonstrate both notch and band-pass microwave filters that can be tuned over the 0-50-GHz spectral band. The waveguide is capable of generating a controllable delay with limited signal attenuation (total insertion loss below 10 dB when the delay is below 70 ps) and degradation. Owing to the very small footprint of the delay line, a fully integrated device is feasible, also featuring more complex and elaborate filter functions.

  11. Photonic crystal-adaptive optical devices

    DEFF Research Database (Denmark)

    Buss, Thomas

    This Ph.D. thesis presents methods for enhancing the optical functionality of transparent glass panes by introduction of invisible nanoscale surface structures, such as gratings and planar photonic cyrstals. In this way the primary functionality of the glass - transparancy - may be enhanced...... been designed, fabricated and analyzed. First a solar harvesting method, based on nanoscale gratings which are imprinted in a thin-film which is deposited on the window pane is discussed. Free-space light which is incident onto a window is coupled to guided modes in the thin-film or the substrate...

  12. Disposable photonic integrated circuits for evanescent wave sensors by ultra-high volume roll-to-roll method.

    Science.gov (United States)

    Aikio, Sanna; Hiltunen, Jussi; Hiitola-Keinänen, Johanna; Hiltunen, Marianne; Kontturi, Ville; Siitonen, Samuli; Puustinen, Jarkko; Karioja, Pentti

    2016-02-08

    Flexible photonic integrated circuit technology is an emerging field expanding the usage possibilities of photonics, particularly in sensor applications, by enabling the realization of conformable devices and introduction of new alternative production methods. Here, we demonstrate that disposable polymeric photonic integrated circuit devices can be produced in lengths of hundreds of meters by ultra-high volume roll-to-roll methods on a flexible carrier. Attenuation properties of hundreds of individual devices were measured confirming that waveguides with good and repeatable performance were fabricated. We also demonstrate the applicability of the devices for the evanescent wave sensing of ambient refractive index. The production of integrated photonic devices using ultra-high volume fabrication, in a similar manner as paper is produced, may inherently expand methods of manufacturing low-cost disposable photonic integrated circuits for a wide range of sensor applications.

  13. Perspective: The future of quantum dot photonic integrated circuits

    Directory of Open Access Journals (Sweden)

    Justin C. Norman

    2018-03-01

    Full Text Available Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS foundries.

  14. Perspective: The future of quantum dot photonic integrated circuits

    Science.gov (United States)

    Norman, Justin C.; Jung, Daehwan; Wan, Yating; Bowers, John E.

    2018-03-01

    Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

  15. InP-based three-dimensional photonic integrated circuits

    Science.gov (United States)

    Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

    2001-10-01

    Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure

  16. Photonic Switching Devices Using Light Bullets

    Science.gov (United States)

    Goorjian, Peter M. (Inventor)

    1999-01-01

    A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

  17. Plasmonic nanofocusing of light in an integrated silicon photonics platform.

    Science.gov (United States)

    Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

    2011-07-04

    The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

  18. Implantable photonic devices for improved medical treatments

    Science.gov (United States)

    Sheinman, Victor; Rudnitsky, Arkady; Toichuev, Rakhmanbek; Eshiev, Abdyrakhman; Abdullaeva, Svetlana; Egemkulov, Talantbek; Zalevsky, Zeev

    2014-10-01

    An evolving area of biomedical research is related to the creation of implantable units that provide various possibilities for imaging, measurement, and the monitoring of a wide range of diseases and intrabody phototherapy. The units can be autonomic or built-in in some kind of clinically applicable implants. Because of specific working conditions in the live body, such implants must have a number of features requiring further development. This topic can cause wide interest among developers of optical, mechanical, and electronic solutions in biomedicine. We introduce preliminary clinical trials obtained with an implantable pill and devices that we have developed. The pill and devices are capable of applying in-body phototherapy, low-level laser therapy, blue light (450 nm) for sterilization, and controlled injection of chemicals. The pill is also capable of communicating with an external control box, including the transmission of images from inside the patient's body. In this work, our pill was utilized for illumination of the sinus-carotid zone in dog and red light influence on arterial pressure and heart rate was demonstrated. Intrabody liver tissue laser ablation and nanoparticle-assisted laser ablation was investigated. Sterilization effect of intrabody blue light illumination was applied during a maxillofacial phlegmon treatment.

  19. Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

    International Nuclear Information System (INIS)

    Ma, Jingwen; Sun, Xiankai; Xi, Xiang; Yu, Zejie

    2016-01-01

    Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

  20. Passive Temperature Stabilization of Silicon Photonic Devices Using Liquid Crystals

    Directory of Open Access Journals (Sweden)

    Joanna Ptasinski

    2014-03-01

    Full Text Available In this work we explore the negative thermo-optic properties of liquid crystal claddings for passive temperature stabilization of silicon photonic integrated circuits. Photonic circuits are playing an increasing role in communications and computing, but they suffer from temperature dependent performance variation. Most existing techniques aimed at compensation of thermal effects rely on power hungry Joule heating. We show that integrating a liquid crystal cladding helps to minimize the effects of a temperature dependent drift. The advantage of liquid crystals lies in their high negative thermo-optic coefficients in addition to low absorption at the infrared wavelengths.

  1. Photonic devices based on black phosphorus and related hybrid materials

    International Nuclear Information System (INIS)

    Vitiello, M.S.; Viti, L.

    2016-01-01

    Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective means for the manipulation and control of carriers, from the visible to the far-infrared, leading to the development of highly efficient devices like sources, detectors and modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them, black phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be specifically engineered to comply with different applications, like transparent saturable absorbers, fast photocounductive switches and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black-phosphorus–based THz photonics and discuss future perspectives of this rapidly developing research field.

  2. Photonics

    CERN Document Server

    Andrews, David L

    2015-01-01

    Discusses the basic physical principles underlying the technology instrumentation of photonics This volume discusses photonics technology and instrumentation. The topics discussed in this volume are: Communication Networks; Data Buffers; Defense and Security Applications; Detectors; Fiber Optics and Amplifiers; Green Photonics; Instrumentation and Metrology; Interferometers; Light-Harvesting Materials; Logic Devices; Optical Communications; Remote Sensing; Solar Energy; Solid-State Lighting; Wavelength Conversion Comprehensive and accessible coverage of the whole of modern photonics Emphas

  3. Materials for optoelectronic devices, OEICs and photonics

    International Nuclear Information System (INIS)

    Schloetterer, H.; Quillec, M.; Greene, P.D.; Bertolotti, M.

    1991-01-01

    The aim of the contributors in this volume is to give a current overview on the basic properties of nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques from growth (LPE to MOMBE) and for processing from surface passivation to ion beams. Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic materials development, as well as indicating the growth techniques that will be in use around the year 2000

  4. Simulation of quantum dynamics with integrated photonics

    Science.gov (United States)

    Sansoni, Linda; Sciarrino, Fabio; Mataloni, Paolo; Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto

    2012-12-01

    In recent years, quantum walks have been proposed as promising resources for the simulation of physical quantum systems. In fact it is widely adopted to simulate quantum dynamics. Up to now single particle quantum walks have been experimentally demonstrated by different approaches, while only few experiments involving many-particle quantum walks have been realized. Here we simulate the 2-particle dynamics on a discrete time quantum walk, built on an array of integrated waveguide beam splitters. The polarization independence of the quantum walk circuit allowed us to exploit the polarization entanglement to encode the symmetry of the two-photon wavefunction, thus the bunching-antibunching behavior of non interacting bosons and fermions has been simulated. We have also characterized the possible distinguishability and decoherence effects arising in such a structure. This study is necessary in view of the realization of a quantum simulator based on an integrated optical array built on a large number of beam splitters.

  5. Vertically Integrated Edgeless Photon Imaging Camera

    Energy Technology Data Exchange (ETDEWEB)

    Fahim, Farah [Fermilab; Deptuch, Grzegorz [Fermilab; Shenai, Alpana [Fermilab; Maj, Piotr [AGH-UST, Cracow; Kmon, Piotr [AGH-UST, Cracow; Grybos, Pawel [AGH-UST, Cracow; Szczygiel, Robert [AGH-UST, Cracow; Siddons, D. Peter [Brookhaven; Rumaiz, Abdul [Brookhaven; Kuczewski, Anthony [Brookhaven; Mead, Joseph [Brookhaven; Bradford, Rebecca [Argonne; Weizeorick, John [Argonne

    2017-01-01

    The Vertically Integrated Photon Imaging Chip - Large, (VIPIC-L), is a large area, small pixel (65μm), 3D integrated, photon counting ASIC with zero-suppressed or full frame dead-time-less data readout. It features data throughput of 14.4 Gbps per chip with a full frame readout speed of 56kframes/s in the imaging mode. VIPIC-L contain 192 x 192 pixel array and the total size of the chip is 1.248cm x 1.248cm with only a 5μm periphery. It contains about 120M transistors. A 1.3M pixel camera module will be developed by arranging a 6 x 6 array of 3D VIPIC-L’s bonded to a large area silicon sensor on the analog side and to a readout board on the digital side. The readout board hosts a bank of FPGA’s, one per VIPIC-L to allow processing of up to 0.7 Tbps of raw data produced by the camera.

  6. Ultra-fast photon counting with a passive quenching silicon photomultiplier in the charge integration regime

    Science.gov (United States)

    Zhang, Guoqing; Lina, Liu

    2018-02-01

    An ultra-fast photon counting method is proposed based on the charge integration of output electrical pulses of passive quenching silicon photomultipliers (SiPMs). The results of the numerical analysis with actual parameters of SiPMs show that the maximum photon counting rate of a state-of-art passive quenching SiPM can reach ~THz levels which is much larger than that of the existing photon counting devices. The experimental procedure is proposed based on this method. This photon counting regime of SiPMs is promising in many fields such as large dynamic light power detection.

  7. Integrated lenses in polystyrene microfluidic devices

    KAUST Repository

    Fan, Yiqiang; Li, Huawei; Foulds, Ian G.

    2013-01-01

    This paper reports a new method for integrating microlenses into microfluidic devices for improved observation. Two demonstration microfluidic devices were provided which were fabricated using this new technique. The integrated microlenses were

  8. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    KAUST Repository

    Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau

    2016-01-01

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via

  9. Photonic integrated circuits : a new approach to laser technology

    NARCIS (Netherlands)

    Piramidowicz, R.; Stopinski, S.T.; Lawniczuk, K.; Welikow, K.; Szczepanski, P.; Leijtens, X.J.M.; Smit, M.K.

    2012-01-01

    In this work a brief review on photonic integrated circuits (PICs) is presented with a specific focus on integrated lasers and amplifiers. The work presents the history of development of the integration technology in photonics and its comparison to microelectronics. The major part of the review is

  10. Photonic Crystal Nanocavity Devices for Nonlinear Signal Processing

    DEFF Research Database (Denmark)

    Yu, Yi

    , membranization of InP/InGaAs structure and wet etching. Experimental investigation of the switching dynamics of InP photonic crystal nanocavity structures are carried out using short-pulse homodyne pump-probe techniques, both in the linear and nonlinear region where the cavity is perturbed by a relatively small......This thesis deals with the investigation of InP material based photonic crystal cavity membrane structures, both experimentally and theoretically. The work emphasizes on the understanding of the physics underlying the structures’ nonlinear properties and their applications for all-optical signal...... processing. Based on the previous fabrication recipe developed in our III-V platform, several processing techniques are developed and optimized for the fabrication of InP photonic crystal membrane structures. Several key issues are identified to ensure a good device quality such as air hole size control...

  11. Integrated Microelectronics and Photonics Active Cooling Technology (IMPACT)

    National Research Council Canada - National Science Library

    Bowers, John

    2003-01-01

    ...) coolers and their integration with microelectronics and photonics. The majority of our research involves the development of this new technology through nanostructured materials design and growth...

  12. Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

    International Nuclear Information System (INIS)

    Schulze, J.; Oehme, M.; Werner, J.

    2012-01-01

    A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

  13. Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

    2012-02-01

    A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

  14. Photonics

    CERN Document Server

    Andrews, David L

    2015-01-01

    Discusses the basic physical principles underlying thescience and technology of nanophotonics, its materials andstructures This volume presents nanophotonic structures and Materials.Nanophotonics is photonic science and technology that utilizeslight/matter interactions on the nanoscale where researchers arediscovering new phenomena and developing techniques that go wellbeyond what is possible with conventional photonics andelectronics.The topics discussed in this volume are: CavityPhotonics; Cold Atoms and Bose-Einstein Condensates; Displays;E-paper; Graphene; Integrated Photonics; Liquid Cry

  15. Chemical sensors fabricated by a photonic integrated circuit foundry

    Science.gov (United States)

    Stievater, Todd H.; Koo, Kee; Tyndall, Nathan F.; Holmstrom, Scott A.; Kozak, Dmitry A.; Goetz, Peter G.; McGill, R. Andrew; Pruessner, Marcel W.

    2018-02-01

    We describe the detection of trace concentrations of chemical agents using waveguide-enhanced Raman spectroscopy in a photonic integrated circuit fabricated by AIM Photonics. The photonic integrated circuit is based on a five-centimeter long silicon nitride waveguide with a trench etched in the top cladding to allow access to the evanescent field of the propagating mode by analyte molecules. This waveguide transducer is coated with a sorbent polymer to enhance detection sensitivity and placed between low-loss edge couplers. The photonic integrated circuit is laid-out using the AIM Photonics Process Design Kit and fabricated on a Multi-Project Wafer. We detect chemical warfare agent simulants at sub parts-per-million levels in times of less than a minute. We also discuss anticipated improvements in the level of integration for photonic chemical sensors, as well as existing challenges.

  16. Switchable Photonic Crystals Using One-Dimensional Confined Liquid Crystals for Photonic Device Application.

    Science.gov (United States)

    Ryu, Seong Ho; Gim, Min-Jun; Lee, Wonsuk; Choi, Suk-Won; Yoon, Dong Ki

    2017-01-25

    Photonic crystals (PCs) have recently attracted considerable attention, with much effort devoted to photonic bandgap (PBG) control for varying the reflected color. Here, fabrication of a modulated one-dimensional (1D) anodic aluminum oxide (AAO) PC with a periodic porous structure is reported. The PBG of the fabricated PC can be reversibly changed by switching the ultraviolet (UV) light on/off. The AAO nanopores contain a mixture of photoresponsive liquid crystals (LCs) with irradiation-activated cis/trans photoisomerizable azobenzene. The resultant mixture of LCs in the porous AAO film exhibits a reversible PBG, depending on the cis/trans configuration of azobenzene molecules. The PBG switching is reliable over many cycles, suggesting that the fabricated device can be used in optical and photonic applications such as light modulators, smart windows, and sensors.

  17. Integrated Visible Photonics for Trapped-Ion Quantum Computing

    Science.gov (United States)

    2017-06-10

    etch to provide a smooth oxide facet, and clearance for fiber positioning for edge input coupling. Integrated Visible Photonics for Trapped-Ion...capability to optically address individual ions at several wavelengths. We demonstrate a dual-layered silicon nitride photonic platform for integration...coherence times, strong coulomb interactions, and optical addressability, hold great promise for implementation of practical quantum information

  18. Photonics in Environment and Energy. A technology roadmap for SMEs on new photonic devices and materials

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, Jonathan; Salingre, Anthony; Vitale, David; Yatsunenko, Sergey; Lojkowski, Witold

    2012-11-01

    Scientific and technological developments in photonics will have a major influence on lots of industries over the next ten to fifteen years. In this highly evolving field, the long-term competitiveness of companies, and especially of Small and Medium sized Enterprises (SMEs), mainly depends on their ability to offer a good product and to establish a successful market position, which is well connected to the management of the hidden potential in existing technological capabilities. Technology roadmaps are interesting tools used to portray the structural and temporal relationships among science, technology and applications and thus help in the decision-making process to remain successful on the market. The present roadmap aims at identifying technological trends for new photonic devices and nanophotonic materials, mainly in terms of market development. It has the main objective to inform SMEs about new scientific discoveries and developments in photonics and their related problem-solving potential for future products and applications in the Environment and Energy sector. This roadmap is part of a set of four roadmaps about the use of photonic technologies in the industrial sectors of ICT, Heath and Well-being, Environment and Energy and Safety and Security. They were developed in the course of the European project PhotonicRoadSME. Altogether, these roadmaps will contribute to support SMEs in their strategic planning for future applications and products.

  19. Printed polymer photonic devices for optical interconnect systems

    Science.gov (United States)

    Subbaraman, Harish; Pan, Zeyu; Zhang, Cheng; Li, Qiaochu; Guo, L. J.; Chen, Ray T.

    2016-03-01

    Polymer photonic device fabrication usually relies on the utilization of clean-room processes, including photolithography, e-beam lithography, reactive ion etching (RIE) and lift-off methods etc, which are expensive and are limited to areas as large as a wafer. Utilizing a novel and a scalable printing process involving ink-jet printing and imprinting, we have fabricated polymer based photonic interconnect components, such as electro-optic polymer based modulators and ring resonator switches, and thermo-optic polymer switch based delay networks and demonstrated their operation. Specifically, a modulator operating at 15MHz and a 2-bit delay network providing up to 35.4ps are presented. In this paper, we also discuss the manufacturing challenges that need to be overcome in order to make roll-to-roll manufacturing practically viable. We discuss a few manufacturing challenges, such as inspection and quality control, registration, and web control, that need to be overcome in order to realize true implementation of roll-to-roll manufacturing of flexible polymer photonic systems. We have overcome these challenges, and currently utilizing our inhouse developed hardware and software tools, <10μm alignment accuracy at a 5m/min is demonstrated. Such a scalable roll-to-roll manufacturing scheme will enable the development of unique optoelectronic devices which can be used in a myriad of different applications, including communication, sensing, medicine, security, imaging, energy, lighting etc.

  20. Organic-inorganic hybrid material SUNCONNECT® for photonic integrated circuit

    Science.gov (United States)

    Nawata, Hideyuki; Oshima, Juro; Kashino, Tsubasa

    2018-02-01

    In this paper, we report the feature and properties about organic-inorganic hybrid material, "SUNCONNECT®" for photonic integrated circuit. "SUNCONNECT®" materials have low propagation loss at 1310nm (0.29dB/cm) and 1550nm (0.45dB/cm) respectively. In addition, the material has high thermal resistance both high temperature annealing test at 300°C and also 260°C solder heat resistance test. For actual device application, high reliability is required. 85°C /85% test was examined by using multi-mode waveguide. As a result, it indicated that variation of insertion loss property was not changed significantly after high temperature / high humidity test. For the application to photonic integrated circuit, it was demonstrated to fabricate polymer optical waveguide by using three different methods. Single-micron core pattern can be fabricated on cladding layer by using UV lithography with proximity gap exposure. Also, single-mode waveguide can be also fabricated with over cladding. On the other hands, "Mosquito method" and imprint method can be applied to fabricate polymer optical waveguide. Remarkably, these two methods can fabricate gradedindex type optical waveguide without using photo mask. In order to evaluate the optical performance, NFP's observation, measurement of insertion loss and propagation loss by cut-back methods were carried out by using each waveguide sample.

  1. Towards roll-to-roll manufacturing of polymer photonic devices

    Science.gov (United States)

    Subbaraman, Harish; Lin, Xiaohui; Ling, Tao; Guo, L. Jay; Chen, Ray T.

    2014-03-01

    Traditionally, polymer photonic devices are fabricated using clean-room processes such as photolithography, e-beam lithography, reactive ion etching (RIE) and lift-off methods etc, which leads to long fabrication time, low throughput and high cost. We have utilized a novel process for fabricating polymer photonic devices using a combination of imprinting and ink jet printing methods, which provides high throughput on a variety of rigid and flexible substrates with low cost. We discuss the manufacturing challenges that need to be overcome in order to realize true implementation of roll-to-roll manufacturing of flexible polymer photonic systems. Several metrology and instrumentation challenges involved such as availability of particulate-free high quality substrate, development and implementation of high-speed in-line and off-line inspection and diagnostic tools with adaptive control for patterned and unpatterned material films, development of reliable hardware, etc need to be addressed and overcome in order to realize a successful manufacturing process. Due to extreme resolution requirements compared to print media, the burden of software and hardware tools on the throughput also needs to be carefully determined. Moreover, the effect of web wander and variations in web speed need to accurately be determined in the design of the system hardware and software. In this paper, we show the realization of solutions for few challenges, and utilizing these solutions for developing a high-rate R2R dual stage ink-jet printer that can provide alignment accuracy of web speed of 5m/min. The development of a roll-to-roll manufacturing system for polymer photonic systems opens limitless possibilities for the deployment of high performance components in a variety of applications including communication, sensing, medicine, agriculture, energy, lighting etc.

  2. Design of integral shutters for the beamlines at the Advanced Photon Source

    International Nuclear Information System (INIS)

    Chang, J.; Shu, D.; Nian, H.L.; Kuzay, T.M.; Job, P.K.

    1994-01-01

    An integral shutter is a device that integrates a white-beam stop, monochromatic-beam (mono-beam) shutters, a safety stop, and a collimator into one assembly to save space in the photon beamline. Various integral shutters have been developed as standard components for the beamlines at the Advanced Photon Source. The integral shutters are designed to be operated in white-beam mode or mono-beam mode. With regard to safety, each mode of operation is secured by locking certain devices in their up or down positions. Some of the components of the integral shutters share designs similar to the front-end shutters or fixed masks. Design details of the integral shutters are presented

  3. GaN-based integrated photonics chip with suspended LED and waveguide

    Science.gov (United States)

    Li, Xin; Wang, Yongjin; Hane, Kazuhiro; Shi, Zheng; Yan, Jiang

    2018-05-01

    We propose a GaN-based integrated photonics chip with suspended LED and straight waveguide with different geometric parameters. The integrated photonics chip is prepared by double-side process. Light transmission performance of the integrated chip verse current is quantitatively analyzed by capturing light transmitted to waveguide tip and BPM (beam propagation method) simulation. Reduction of the waveguide width from 8 μm to 4 μm results in an over linear reduction of the light output power while a doubling of the length from 250 μm to 500 μm only results in under linear decrease of the output power. Free-space data transmission with 80 Mbps random binary sequence of the integrated chip is capable of achieving high speed data transmission via visible light. This study provides a potential approach for GaN-based integrated photonics chip as micro light source and passive optical device in VLC (visible light communication).

  4. Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

    Science.gov (United States)

    Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

    2018-03-01

    III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

  5. Deeply-etched DBR mirrors for photonic integrated circuits and tunable lasers

    NARCIS (Netherlands)

    Docter, B.

    2009-01-01

    Deeply-etched Distributed Bragg Reflector (DBR) mirrors are a new versatile building block for Photonic Integrated Circuits that allows us to create more complex circuits for optical telecommunication applications. The DBR mirrors increase the device design flexibility because the mirrors can be

  6. Quantum dash based single section mode locked lasers for photonic integrated circuits.

    Science.gov (United States)

    Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

    2014-05-05

    We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

  7. Novel Plasmonic Materials and Nanodevices for Integrated Quantum Photonics

    Science.gov (United States)

    Shalaginov, Mikhail Y.

    Light-matter interaction is the foundation for numerous important quantum optical phenomena, which may be harnessed to build practical devices with higher efficiency and unprecedented functionality. Nanoscale engineering is seen as a fruitful avenue to significantly strengthen light-matter interaction and also make quantum optical systems ultra-compact, scalable, and energy efficient. This research focuses on color centers in diamond that share quantum properties with single atoms. These systems promise a path for the realization of practical quantum devices such as nanoscale sensors, single-photon sources, and quantum memories. In particular, we explored an intriguing methodology of utilizing nanophotonic structures, such as hyperbolic metamaterials, nanoantennae, and plasmonic waveguides, to improve the color centers performance. We observed enhancement in the color center's spontaneous emission rate, emission directionality, and cooperativity over a broad optical frequency range. Additionally, we studied the effect of plasmonic environments on the spin-readout sensitivity of color centers. The use of CMOS-compatible epitaxially grown plasmonic materials in the design of these nanophotonic structures promises a new level of performance for a variety of integrated room-temperature quantum devices based on diamond color centers.

  8. Plasma Photonic Devices for High Energy Density Science

    International Nuclear Information System (INIS)

    Kodama, R.

    2005-01-01

    High power laser technologies are opening a variety of attractive fields of science and technology using high energy density plasmas such as plasma physics, laboratory astrophysics, material science, nuclear science including medical applications and laser fusion. The critical issues in the applications are attributed to the control of intense light and enormous density of charged particles including efficient generation of the particles such as MeV electrons and protons with a current density of TA/cm2. Now these application possibilities are limited only by the laser technology. These applications have been limited in the control of the high power laser technologies and their optics. However, if we have another device consisted of the 4th material, i.e. plasma, we will obtain a higher energy density condition and explore the application possibilities, which could be called high energy plasma device. One of the most attractive devices has been demonstrated in the fast ignition scheme of the laser fusion, which is cone-guiding of ultra-intense laser light in to high density regions1. This is one of the applications of the plasma device to control the ultra-intense laser light. The other role of the devices consisted of transient plasmas is control of enormous energy-density particles in a fashion analogous to light control with a conventional optical device. A plasma fibre (5?m/1mm), as one example of the devices, has guided and deflected the high-density MeV electrons generated by ultra-intense laser light 2. The electrons have been well collimated with either a lens-like plasma device or a fibre-like plasma, resulting in isochoric heating and creation of ultra-high pressures such as Giga bar with an order of 100J. Plasmas would be uniquely a device to easily control the higher energy density particles like a conventional optical device as well as the ultra-intense laser light, which could be called plasma photonic device. (Author)

  9. Photonic integrated circuits for millimeter-wave wireless communications

    NARCIS (Netherlands)

    Carpintero, G.; Balakier, K.; Yang, Z.; Guzmán, R.C.; Corradi, A.; Jimenez, A.; Kervalla, G.; Fice, M.; Lamponi, M.; Chtioui, M.; Van Dijk, Frédéric; Renaud, C.C.; Wonfor, A.; Bente, E.A.J.M.; Penty, R.V.; White, I.H.; Seeds, A.J.

    2014-01-01

    This paper describes the advantages that the introduction of photonic integration technologies can bring to the development of photonic-enabled wireless communications systems operating in the millimeter wave frequency range. We present two approaches for the development of dual wavelength sources

  10. Heat sinking of highly integrated photonic and electronic circuits

    NARCIS (Netherlands)

    van Rijn, M.B.J.; Smit, M.K.

    2017-01-01

    Dense integration of photonic and electronic circuits poses high requirements on thermal management. In this paper we present analysis of temperature distributions in PICs in InP membranes on top of a BiCMOS chip, which contain hot spots in both the photonic and the electronic layer (lasers, optical

  11. Long-wavelength photonic integrated circuits and avalanche photodetectors

    Science.gov (United States)

    Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

    2001-10-01

    Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve In

  12. Optimizing performance of plasmonic devices for photonic circuits

    DEFF Research Database (Denmark)

    Rosenzveig, Tiberiu; Hermannsson, Pétur Gordon; Boltasseva, Alexandra

    2010-01-01

    specifications similar to or better than commercially available thermo-optic integrated optical components. Specifically, we have considered the insertion loss, power consumption, footprint, polarization-dependent loss, extinction ratio, and frequency response of the plasmonic devices, in addition to fabrication...

  13. Photodetection, photon event localization and position tomography device comprising a gammagraphy camera equipped wit such devices

    International Nuclear Information System (INIS)

    Jatteau, M.R.

    1984-01-01

    This device of photodetection and photon event (and noticeably scintillations) localization comprises at least a photomultiplier tube with unique photomultiplying structure and in front of this tube, a net of juxtaposed conduction metal wires excited by voltage pulses. This net comprises only 2n metallic wires to assure the localization of 2sup(2n) possible positions, and that is one of its characteristics [fr

  14. On-chip synthesis of circularly polarized emission of light with integrated photonic circuits.

    Science.gov (United States)

    He, Li; Li, Mo

    2014-05-01

    The helicity of circularly polarized (CP) light plays an important role in the light-matter interaction in magnetic and quantum material systems. Exploiting CP light in integrated photonic circuits could lead to on-chip integration of novel optical helicity-dependent devices for applications ranging from spintronics to quantum optics. In this Letter, we demonstrate a silicon photonic circuit coupled with a 2D grating emitter operating at a telecom wavelength to synthesize vertically emitting, CP light from a quasi-TE waveguide mode. Handedness of the emitted circular polarized light can be thermally controlled with an integrated microheater. The compact device footprint enables a small beam diameter, which is desirable for large-scale integration.

  15. Scalable electro-photonic integration concept based on polymer waveguides

    Science.gov (United States)

    Bosman, E.; Van Steenberge, G.; Boersma, A.; Wiegersma, S.; Harmsma, P.; Karppinen, M.; Korhonen, T.; Offrein, B. J.; Dangel, R.; Daly, A.; Ortsiefer, M.; Justice, J.; Corbett, B.; Dorrestein, S.; Duis, J.

    2016-03-01

    A novel method for fabricating a single mode optical interconnection platform is presented. The method comprises the miniaturized assembly of optoelectronic single dies, the scalable fabrication of polymer single mode waveguides and the coupling to glass fiber arrays providing the I/O's. The low cost approach for the polymer waveguide fabrication is based on the nano-imprinting of a spin-coated waveguide core layer. The assembly of VCSELs and photodiodes is performed before waveguide layers are applied. By embedding these components in deep reactive ion etched pockets in the silicon substrate, the planarity of the substrate for subsequent layer processing is guaranteed and the thermal path of chip-to-substrate is minimized. Optical coupling of the embedded devices to the nano-imprinted waveguides is performed by laser ablating 45 degree trenches which act as optical mirror for 90 degree deviation of the light from VCSEL to waveguide. Laser ablation is also implemented for removing parts of the polymer stack in order to mount a custom fabricated connector containing glass fiber arrays. A demonstration device was built to show the proof of principle of the novel fabrication, packaging and optical coupling principles as described above, combined with a set of sub-demonstrators showing the functionality of the different techniques separately. The paper represents a significant part of the electro-photonic integration accomplishments in the European 7th Framework project "Firefly" and not only discusses the development of the different assembly processes described above, but the efforts on the complete integration of all process approaches into the single device demonstrator.

  16. Integrated lenses in polystyrene microfluidic devices

    KAUST Repository

    Fan, Yiqiang

    2013-04-01

    This paper reports a new method for integrating microlenses into microfluidic devices for improved observation. Two demonstration microfluidic devices were provided which were fabricated using this new technique. The integrated microlenses were fabricated using a free-surface thermo-compression molding method on a polystyrene (PS) sheet which was then bonded on top of microfluidic channels as a cover plate, with the convex microlenses providing a magnified image of the channel for the easier observation of the flow in the microchannels. This approach for fabricating the integrated microlens in microfluidic devices is rapid, low cost and without the requirement of cleanroom facilities. © 2013 IEEE.

  17. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

    Science.gov (United States)

    Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

    2018-04-01

    Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

  18. On-chip multi-wavelength laser sources fabricated using generic photonic integration technology

    NARCIS (Netherlands)

    Latkowski, S.; Williams, K.A.; Bente, E.A.J.M.

    Generic photonic integration technology platforms allow for design and fabrication of large complexity application specific photonic integrated circuits. Monolithic active-passive integration on indium phosphide substrate naturally enables a reliable co-integration of optical gain elements and

  19. Electro-optic routing of photons from a single quantum dot in photonic integrated circuits

    Science.gov (United States)

    Midolo, Leonardo; Hansen, Sofie L.; Zhang, Weili; Papon, Camille; Schott, Rüdiger; Ludwig, Arne; Wieck, Andreas D.; Lodahl, Peter; Stobbe, Søren

    2017-12-01

    Recent breakthroughs in solid-state photonic quantum technologies enable generating and detecting single photons with near-unity efficiency as required for a range of photonic quantum technologies. The lack of methods to simultaneously generate and control photons within the same chip, however, has formed a main obstacle to achieving efficient multi-qubit gates and to harness the advantages of chip-scale quantum photonics. Here we propose and demonstrate an integrated voltage-controlled phase shifter based on the electro-optic effect in suspended photonic waveguides with embedded quantum emitters. The phase control allows building a compact Mach-Zehnder interferometer with two orthogonal arms, taking advantage of the anisotropic electro-optic response in gallium arsenide. Photons emitted by single self-assembled quantum dots can be actively routed into the two outputs of the interferometer. These results, together with the observed sub-microsecond response time, constitute a significant step towards chip-scale single-photon-source de-multiplexing, fiber-loop boson sampling, and linear optical quantum computing.

  20. Multidimensional microstructured photonic device based on all-solid waveguide array fiber and magnetic fluid

    Directory of Open Access Journals (Sweden)

    Miao Yinping

    2016-11-01

    Full Text Available An all-solid waveguide array fiber (WAF is one kind of special microstructured optical fiber in which the higher-index rods are periodically distributed in a low-index silica host to form the transverse two-dimensional photonic crystal. In this paper, one kind of multidimensional microstructured optical fiber photonic device is proposed by using electric arc discharge method to fabricate periodic tapers along the fiber axis. By tuning the applied magnetic field intensity, the propagation characteristics of the all-solid WAF integrated with magnetic fluid are periodically modulated in both radial and axial directions. Experimental results show that the wavelength changes little while the transmission loss increases for an applied magnetic field intensity range from 0 to 500 Oe. The magnetic field sensitivity is 0.055 dB/Oe within the linear range from 50 to 300 Oe. Meanwhile, the all-solid WAF has very similar thermal expansion coefficient for both high- and low-refractive index glasses, and thermal drifts have a little effect on the mode profile. The results show that the temperature-induced transmission loss is <0.3 dB from 26°C to 44°C. Further tuning coherent coupling of waveguides and controlling light propagation, the all-solid WAF would be found great potential applications to develop new micro-nano photonic devices for optical communications and optical sensing applications.

  1. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    KAUST Repository

    Tsai, Yu-Lin

    2016-09-06

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

  2. Atomic layer deposition for graphene device integration

    NARCIS (Netherlands)

    Vervuurt, R.H.J.; Kessels, W.M.M.; Bol, A.A.

    2017-01-01

    Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD)

  3. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  4. Wide-band polarization controller for Si photonic integrated circuits.

    Science.gov (United States)

    Velha, P; Sorianello, V; Preite, M V; De Angelis, G; Cassese, T; Bianchi, A; Testa, F; Romagnoli, M

    2016-12-15

    A circuit for the management of any arbitrary polarization state of light is demonstrated on an integrated silicon (Si) photonics platform. This circuit allows us to adapt any polarization into the standard fundamental TE mode of a Si waveguide and, conversely, to control the polarization and set it to any arbitrary polarization state. In addition, the integrated thermal tuning allows kilohertz speed which can be used to perform a polarization scrambler. The circuit was used in a WDM link and successfully used to adapt four channels into a standard Si photonic integrated circuit.

  5. Long-wavelength III-V/silicon photonic integrated circuits

    NARCIS (Netherlands)

    Roelkens, G.C.; Kuyken, B.; Leo, F.; Hattasan, N.; Ryckeboer, E.M.P.; Muneeb, M.; Hu, C.L.; Malik, A.; Hens, Z.; Baets, R.G.F.; Shimura, Y.; Gencarelli, F.; Vincent, B.; Loo, van de R.; Verheyen, P.A.; Lepage, G.; Campenhout, van J.; Cerutti, L.; Rodriquez, J.B.; Tournie, E.; Chen, X; Nedeljkovic, G.; Mashanovich, G.; Liu, X.; Green, W.S.

    2013-01-01

    We review our work in the field of short-wave infrared and mid-infrared photonic integrated circuits for applications in spectroscopic sensing systems. Passive silicon waveguide circuits, GeSn photodetectors, the integration of III-V and IV-VI semiconductors on these circuits, and silicon nonlinear

  6. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    Science.gov (United States)

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  7. High performance bio-integrated devices

    Science.gov (United States)

    Kim, Dae-Hyeong; Lee, Jongha; Park, Minjoon

    2014-06-01

    In recent years, personalized electronics for medical applications, particularly, have attracted much attention with the rise of smartphones because the coupling of such devices and smartphones enables the continuous health-monitoring in patients' daily life. Especially, it is expected that the high performance biomedical electronics integrated with the human body can open new opportunities in the ubiquitous healthcare. However, the mechanical and geometrical constraints inherent in all standard forms of high performance rigid wafer-based electronics raise unique integration challenges with biotic entities. Here, we describe materials and design constructs for high performance skin-mountable bio-integrated electronic devices, which incorporate arrays of single crystalline inorganic nanomembranes. The resulting electronic devices include flexible and stretchable electrophysiology electrodes and sensors coupled with active electronic components. These advances in bio-integrated systems create new directions in the personalized health monitoring and/or human-machine interfaces.

  8. Efficient generation of single and entangled photons on a silicon photonic integrated chip

    International Nuclear Information System (INIS)

    Mower, Jacob; Englund, Dirk

    2011-01-01

    We present a protocol for generating on-demand, indistinguishable single photons on a silicon photonic integrated chip. The source is a time-multiplexed spontaneous parametric down-conversion element that allows optimization of single-photon versus multiphoton emission while realizing high output rate and indistinguishability. We minimize both the scaling of active elements and the scaling of active element loss with multiplexing. We then discuss detection strategies and data processing to further optimize the procedure. We simulate an improvement in single-photon-generation efficiency over previous time-multiplexing protocols, assuming existing fabrication capabilities. We then apply this system to generate heralded Bell states. The generation efficiency of both nonclassical states could be increased substantially with improved fabrication procedures.

  9. Graphene-on-silicon hybrid plasmonic-photonic integrated circuits.

    Science.gov (United States)

    Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

    2017-06-16

    Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

  10. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    Science.gov (United States)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  11. Enhancement of broadband optical absorption in photovoltaic devices by band-edge effect of photonic crystals.

    Science.gov (United States)

    Tanaka, Yoshinori; Kawamoto, Yosuke; Fujita, Masayuki; Noda, Susumu

    2013-08-26

    We numerically investigate broadband optical absorption enhancement in thin, 400-nm thick microcrystalline silicon (µc-Si) photovoltaic devices by photonic crystals (PCs). We realize absorption enhancement by coupling the light from the free space to the large area resonant modes at the photonic band-edge induced by the photonic crystals. We show that multiple photonic band-edge modes can be produced by higher order modes in the vertical direction of the Si photovoltaic layer, which can enhance the absorption on multiple wavelengths. Moreover, we reveal that the photonic superlattice structure can produce more photonic band-edge modes that lead to further optical absorption. The absorption average in wavelengths of 500-1000 nm weighted to the solar spectrum (AM 1.5) increases almost twice: from 33% without photonic crystal to 58% with a 4 × 4 period superlattice photonic crystal; our result outperforms the Lambertian textured structure.

  12. Integration of Single-Photon Sources and Detectors on GaAs

    Directory of Open Access Journals (Sweden)

    Giulia Enrica Digeronimo

    2016-10-01

    Full Text Available Quantum photonic integrated circuits (QPICs on a GaAs platform allow the generation, manipulation, routing, and detection of non-classical states of light, which could pave the way for quantum information processing based on photons. In this article, the prototype of a multi-functional QPIC is presented together with our recent achievements in terms of nanofabrication and integration of each component of the circuit. Photons are generated by excited InAs quantum dots (QDs and routed through ridge waveguides towards photonic crystal cavities acting as filters. The filters with a transmission of 20% and free spectral range ≥66 nm are able to select a single excitonic line out of the complex emission spectra of the QDs. The QD luminescence can be measured by on-chip superconducting single photon detectors made of niobium nitride (NbN nanowires patterned on top of a suspended nanobeam, reaching a device quantum efficiency up to 28%. Moreover, two electrically independent detectors are integrated on top of the same nanobeam, resulting in a very compact autocorrelator for on-chip g(2(τ measurements.

  13. Integration of a photonic crystal polarization beam splitter and waveguide bend.

    Science.gov (United States)

    Zheng, Wanhua; Xing, Mingxin; Ren, Gang; Johnson, Steven G; Zhou, Wenjun; Chen, Wei; Chen, Lianghui

    2009-05-11

    In this work, we present the design of an integrated photonic-crystal polarization beam splitter (PC-PBS) and a low-loss photonic-crystal 60 degrees waveguide bend. Firstly, the modal properties of the PC-PBS and the mechanism of the low-loss waveguide bend are investigated by the two-dimensional finite-difference time-domain (FDTD) method, and then the integration of the two devices is studied. It shows that, although the individual devices perform well separately, the performance of the integrated circuit is poor due to the multi-mode property of the PC-PBS. By introducing deformed airhole structures, a single-mode PC-PBS is proposed, which significantly enhance the performance of the circuit with the extinction ratios remaining above 20 dB for both transverse-electric (TE) and transverse-magnetic (TM) polarizations. Both the specific result and the general idea of integration design are promising in the photonic crystal integrated circuits in the future.

  14. Magneto-optical non-reciprocal devices in silicon photonics

    Directory of Open Access Journals (Sweden)

    Yuya Shoji

    2014-01-01

    Full Text Available Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.

  15. Photonics

    Science.gov (United States)

    1991-01-01

    Optoelectronic materials and devices are examined. Optoelectronic devices, which generate, detect, modulate, or switch electromagnetic radiation are being developed for a variety of space applications. The program includes spatial light modulators, solid state lasers, optoelectronic integrated circuits, nonlinear optical materials and devices, fiber optics, and optical networking photovoltaic technology and optical processing.

  16. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  17. Fabrication and Characterization of Linear and Nonlinear Photonic Devices in Fused Silica by Femtosecond Laser Writing

    Science.gov (United States)

    Ng, Jason Clement

    Femtosecond laser processing is a flexible, three-dimensional (3D) fabrication technique used to make integrated low-loss photonic devices in fused silica. My work expanded the suite of available optical devices through the design and optimization of linear optical components such as low-loss (70-nm spectral window. My work further complemented femtosecond laser processing with the development of nonlinear device capabilities. While thermal poling is a well known process, significant challenges had restricted the development of nonlinear devices in fused silica. The laser writing process would erase the induced nonlinearity (erasing) while a written waveguide core acted as a barrier to the thermal poling process (blocking). Using second harmonic (SH) microscopy, the effectiveness of thermal poling on laser-written waveguides was systematically analyzed leading to the technique of "double poling", which effectively overcomes the two challenges of erasing and blocking. In this new process the substrate is poled before and after waveguide writing to restore the induced nonlinearity within the vicinity of the waveguide to enable effective poling for inducing a second-order nonlinearity (SON) in fused silica. A new flexible, femtosecond laser based erasure process was also developed to enable quasi-phase matching and to form arbitrarily chirped gratings. Following this result, second harmonic generation (SHG) in a quasiphase-matched (QPM) femtosecond laser written waveguide device was demonstrated. SHG in a chirped QPM structure was also demonstrated to illustrate the flexibility of the femtosecond laser writing technique. These are the first demonstration of frequency doubling in an all-femtosecond-laser-written structure. A maximum SHG conversion efficiency of 1.3 +/- 0.1x10 -11/W-cm-2 was achieved for the fundamental wavelength of 1552.8 nm with a phase-matching bandwidth of 4.4 nm for a 10.0-mm-long waveguide. For a shorter sample, an effective SON of chi(2) = 0

  18. Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

    Science.gov (United States)

    Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

    2017-05-01

    Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

  19. Photonic crystal resonator integrated in a microfluidic system

    DEFF Research Database (Denmark)

    Rodrigues de Sousa Nunes, Pedro André; Mortensen, Niels Asger; Kutter, Jörg Peter

    2008-01-01

    We report on a novel optofluidic system consisting of a silica-based 1D photonic crystal, integrated planar waveguides, and electrically insulated fluidic channels. An array of pillars in a microfluidic channel designed for electrochromatography is used as a resonator for on-column label...

  20. Chemical and biological sensing applications of integrated photonics with an introduction to the American Institute for Manufacturing Integrated Photonics (AIM Photonics)

    Science.gov (United States)

    Bickford, Justin; Guicheteau, Jason

    2016-05-01

    Integrated photonics affords an opportunity to explore novel sensing and lab-on-a-chip concepts. It offers a route to high sensitivity, high selectivity, and low SWaP-C test systems that can be operated autonomously or by minimallytrained field personnel. We'll introduce the topic, discuss possible sensing modalities, and highlight the advantages and limitations of this technology. We'll also introduce the recent American Institute for Manufacturing Integrated Photonics (AIM Photonics), give an overview of its vision and capabilities, how to utilize its Electronic-Photonic Design Automation (EPDA) tools and its Multi-Project Wafer and Assembly (MPWA) services, how to engage in its road mapping efforts, and how to become a contributing member.

  1. Smart wavelength meter for integrated photonics

    NARCIS (Netherlands)

    Benelajla, Meryem; Taballione, Caterina; Boller, Klaus J.

    2017-01-01

    Thermally tunable SiN waveguide microring resonators in connection with neural network readout algorithms appear promising for use as integrated optical wavelength meters. So far, we have observed long-term reliability and a temperature immunity of the readout across several degrees of ambient

  2. Topology Optimization of Building Blocks for Photonic Integrated Circuits

    DEFF Research Database (Denmark)

    Jensen, Jakob Søndergaard; Sigmund, Ole

    2005-01-01

    Photonic integrated circuits are likely candidates as high speed replacements for the standard electrical integrated circuits of today. However, in order to obtain a satisfactorily performance many design prob- lems that up until now have resulted in too high losses must be resolved. In this work...... we demonstrate how the method of topology optimization can be used to design a variety of high performance building blocks for the future circuits....

  3. Integrated photon sources for quantum information science applications

    Science.gov (United States)

    Fanto, M. L.; Tison, C. C.; Steidle, J. A.; Lu, T.; Wang, Z.; Mogent, N. A.; Rizzo, A.; Thomas, P. M.; Preble, S. F.; Alsing, P. M.; Englund, D. R.

    2017-10-01

    Ring resonators are used as photon pair sources by taking advantage of the materials second or third order non- linearities through the processes of spontaneous parametric downconversion and spontaneous four wave mixing respectively. Two materials of interest for these applications are silicon for the infrared and aluminum nitride for the ultraviolet through the infrared. When fabricated into ring type sources they are capable of producing pairs of indistinguishable photons but typically suffer from an effective 50% loss. By slightly decoupling the input waveguide from the ring, the drop port coincidence ratio can be significantly increased with the trade-off being that the pump is less efficiently coupled into the ring. Ring resonators with this design have been demonstrated having coincidence ratios of 96% but requiring a factor of 10 increase in the pump power. Through the modification of the coupling design that relies on additional spectral dependence, it is possible to achieve similar coincidence ratios without the increased pumping requirement. This can be achieved by coupling the input waveguide to the ring multiple times, thus creating a Mach-Zehnder interferometer. This coupler design can be used on both sides of the ring resonator so that resonances supported by one of the couplers are suppressed by the other. This is the ideal configuration for a photon-pair source as it can only support the pump photons at the input side while only allowing the generated photons to leave through the output side. Recently, this device has been realized with preliminary results exhibiting the desired spectral dependence and with a coincidence ratio as high as 97% while allowing the pump to be nearly critically coupled to the ring. The demonstrated near unity coincidence ratio infers a near maximal heralding efficiency from the fabricated device. This device has the potential to greatly improve the scalability and performance of quantum computing and communication systems.

  4. Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

    Science.gov (United States)

    Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

    2017-02-08

    We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

  5. Modelling band-to-band tunneling current in InP-based heterostructure photonic devices

    NARCIS (Netherlands)

    van Engelen, J.P.; Shen, L.; van der Tol, J.J.G.M.; Smit, M.K.; Kockaert, P.; Emplit, P.; Gorza, S.-P.; Massar, S.

    2015-01-01

    Some semiconductor photonic devices show large discontinuities in the band structure. Short tunnel paths caused by this band structure may lead to an excessive tunneling current, especially in highly doped layers. Modelling of this tunnelling current is therefore important when designing photonic

  6. An integrated microcombustor and photonic crystal emitter for thermophotovoltaics

    Science.gov (United States)

    Chan, Walker R.; Stelmakh, Veronika; Allmon, William R.; Waits, Christopher M.; Soljacic, Marin; Joannopoulos, John D.; Celanovic, Ivan

    2016-11-01

    Thermophotovoltaic (TPV) energy conversion is appealing for portable millimeter- scale generators because of its simplicity, but it relies on a high temperatures. The performance and reliability of the high-temperature components, a microcombustor and a photonic crystal emitter, has proven challenging because they are subjected to 1000-1200°C and stresses arising from thermal expansion mismatches. In this paper, we adopt the industrial process of diffusion brazing to fabricate an integrated microcombustor and photonic crystal by bonding stacked metal layers. Diffusion brazing is simpler and faster than previous approaches of silicon MEMS and welded metal, and the end result is more robust.

  7. An integrated microcombustor and photonic crystal emitter for thermophotovoltaics

    International Nuclear Information System (INIS)

    Chan, Walker R.; Stelmakh, Veronika; Joannopoulos, John D.; Celanovic, Ivan; Allmon, William R.; Waits, Christopher M.; Soljacic, Marin

    2016-01-01

    Thermophotovoltaic (TPV) energy conversion is appealing for portable millimeter- scale generators because of its simplicity, but it relies on a high temperatures. The performance and reliability of the high-temperature components, a microcombustor and a photonic crystal emitter, has proven challenging because they are subjected to 1000-1200°C and stresses arising from thermal expansion mismatches. In this paper, we adopt the industrial process of diffusion brazing to fabricate an integrated microcombustor and photonic crystal by bonding stacked metal layers. Diffusion brazing is simpler and faster than previous approaches of silicon MEMS and welded metal, and the end result is more robust. (paper)

  8. Recent progress in organic electronics and photonics: A perspective on the future of organic devices

    KAUST Repository

    Bredas, Jean-Luc

    2016-01-01

    The fields of organic electronics and photonics have witnessed remarkable advances over the past few years. This progress bodes well for the increased utilization of organic materials as the active layers in devices for applications as diverse

  9. Nanostructured silicon for photonics from materials to devices

    CERN Document Server

    Gaburro, Z; Daldosso, N

    2006-01-01

    The use of light to channel signals around electronic chips could solve several current problems in microelectronic evolution including: power dissipation, interconnect bottlenecks, input/output from/to optical communication channels, poor signal bandwidth, etc. It is unfortunate that silicon is not a good photonic material: it has a poor light-emission efficiency and exhibits a negligible electro-optical effect. Silicon photonics is a field having the objective of improving the physical properties of silicon; thus turning it into a photonic material and permitting the full convergence of elec

  10. Integrated multiscale modeling of molecular computing devices

    International Nuclear Information System (INIS)

    Cummings, Peter T; Leng Yongsheng

    2005-01-01

    Molecular electronics, in which single organic molecules are designed to perform the functions of transistors, diodes, switches and other circuit elements used in current siliconbased microelecronics, is drawing wide interest as a potential replacement technology for conventional silicon-based lithographically etched microelectronic devices. In addition to their nanoscopic scale, the additional advantage of molecular electronics devices compared to silicon-based lithographically etched devices is the promise of being able to produce them cheaply on an industrial scale using wet chemistry methods (i.e., self-assembly from solution). The design of molecular electronics devices, and the processes to make them on an industrial scale, will require a thorough theoretical understanding of the molecular and higher level processes involved. Hence, the development of modeling techniques for molecular electronics devices is a high priority from both a basic science point of view (to understand the experimental studies in this field) and from an applied nanotechnology (manufacturing) point of view. Modeling molecular electronics devices requires computational methods at all length scales - electronic structure methods for calculating electron transport through organic molecules bonded to inorganic surfaces, molecular simulation methods for determining the structure of self-assembled films of organic molecules on inorganic surfaces, mesoscale methods to understand and predict the formation of mesoscale patterns on surfaces (including interconnect architecture), and macroscopic scale methods (including finite element methods) for simulating the behavior of molecular electronic circuit elements in a larger integrated device. Here we describe a large Department of Energy project involving six universities and one national laboratory aimed at developing integrated multiscale methods for modeling molecular electronics devices. The project is funded equally by the Office of Basic

  11. Infrared transparent graphene heater for silicon photonic integrated circuits.

    Science.gov (United States)

    Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

    2016-04-18

    Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

  12. Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

    International Nuclear Information System (INIS)

    Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

    2015-01-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

  13. Multichannel photonic Hilbert transformers based on complex modulated integrated Bragg gratings.

    Science.gov (United States)

    Cheng, Rui; Chrostowski, Lukas

    2018-03-01

    Multichannel photonic Hilbert transformers (MPHTs) are reported. The devices are based on single compact spiral integrated Bragg gratings on silicon with coupling coefficients precisely modulated by the phase of each grating period. MPHTs with up to nine wavelength channels and a single-channel bandwidth of up to ∼625  GHz are achieved. The potential of the devices for multichannel single-sideband signal generation is suggested. The work offers a new possibility of utilizing wavelength as an extra degree of freedom in designing radio-frequency photonic signal processors. Such multichannel processors are expected to possess improved capacities and a potential to greatly benefit current widespread wavelength division multiplexed systems.

  14. Spin coating and plasma process for 2.5D integrated photonics on multilayer polymers

    International Nuclear Information System (INIS)

    Zebda, A.; Camberlein, L.; Beche, B.; Gaviot, E.; Beche, E.; Duval, D.; Zyss, J.; Jezequel, G.; Solal, F.; Godet, C.

    2008-01-01

    Polymer spin coating, surface plasma treatment and selective UV-lithography processes have been developed to realize 2.5D photonic micro-resonators, made of disk- or ring-shaped upper rib waveguides, using common polymers such as SU8 (biphenol A ether glycidyl), PS233 (polymeric silane) and SOG (siloxane Spin on Glass). Both oxygen and argon plasma treatments, applied to PS233 and SOG before spin-coating the SU8, improve substantially the grip of multilayer devices (SU8 / PS233 or SU8 / SOG). Surface energy components derived from contact angle measurements have been used to optimize the processing conditions. In such integrated photonic devices, the both single-electromagnetic-modes called transverse electric (TE 00 ) and transverse magnetic (TM 00 ) have been excited in a SU8 micro-disk, with a single mode propagation strongly localized near the edge of the disk (i.e. the so called whispering gallery modes)

  15. An integrated processor for photonic quantum states using a broadband light–matter interface

    International Nuclear Information System (INIS)

    Saglamyurek, E; Sinclair, N; Slater, J A; Heshami, K; Oblak, D; Tittel, W

    2014-01-01

    Faithful storage and coherent manipulation of quantum optical pulses are key for long distance quantum communications and quantum computing. Combining these functions in a light–matter interface that can be integrated on-chip with other photonic quantum technologies, e.g. sources of entangled photons, is an important step towards these applications. To date there have only been a few demonstrations of coherent pulse manipulation utilizing optical storage devices compatible with quantum states, and that only in atomic gas media (making integration difficult) and with limited capabilities. Here we describe how a broadband waveguide quantum memory based on the atomic frequency comb (AFC) protocol can be used as a programmable processor for essentially arbitrary spectral and temporal manipulations of individual quantum optical pulses. Using weak coherent optical pulses at the few photon level, we experimentally demonstrate sequencing, time-to-frequency multiplexing and demultiplexing, splitting, interfering, temporal and spectral filtering, compressing and stretching as well as selective delaying. Our integrated light–matter interface offers high-rate, robust and easily configurable manipulation of quantum optical pulses and brings fully practical optical quantum devices one step closer to reality. Furthermore, as the AFC protocol is suitable for storage of intense light pulses, our processor may also find applications in classical communications. (paper)

  16. Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

    Science.gov (United States)

    Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

    2012-04-09

    On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

  17. Few-photon Non-linearities in Nanophotonic Devices for Quantum Information Technology

    DEFF Research Database (Denmark)

    Nysteen, Anders

    In this thesis we investigate few-photon non-linearities in all-optical, on-chip circuits, and we discuss their possible applications in devices of interest for quantum information technology, such as conditional two-photon gates and single-photon sources. In order to propose efficient devices...... the scattered photons. Even though the non-linearity also alters the pulse spectrum due to a four-wave mixing process, we demonstrate that input pulses with a Gaussian spectrum can be mapped to the output with up to 80 % fidelity. Using two identical two-level emitters, we propose a setup for a deterministic...... by the capturing process. Semiconductor quantum dots (QDs) are promising for realizing few-photon non-linearities in solid-state implementations, although coupling to phonon modes in the surrounding lattice have significant influence on the dynamics. By accounting for the commonly neglected asymmetry between...

  18. Multilayered photonic integration on SOI platform using waveguide-based bridge structure

    Science.gov (United States)

    Majumder, Saikat; Chakraborty, Rajib

    2018-06-01

    A waveguide based structure on silicon on insulator platform is proposed for vertical integration in photonic integrated circuits. The structure consists of two multimode interference couplers connected by a single mode (SM) section which can act as a bridge over any other underlying device. Two more SM sections acts as input and output of the first and second multimode couplers respectively. Potential application of this structure is in multilayered photonic links. It is shown that the efficiency of the structure can be improved by making some design modifications. The entire simulation is done using effective-index based matrix method. The feature size chosen are comparable to waveguides fabricated previously so as to fabricate the proposed structure easily.

  19. Full control of far-field radiation via photonic integrated circuits decorated with plasmonic nanoantennas.

    Science.gov (United States)

    Sun, Yi-Zhi; Feng, Li-Shuang; Bachelot, Renaud; Blaize, Sylvain; Ding, Wei

    2017-07-24

    We theoretically develop a hybrid architecture consisting of photonic integrated circuit and plasmonic nanoantennas to fully control optical far-field radiation with unprecedented flexibility. By exploiting asymmetric and lateral excitation from silicon waveguides, single gold nanorod and cascaded nanorod pair can function as component radiation pixels, featured by full 2π phase coverage and nanoscale footprint. These radiation pixels allow us to design scalable on-chip devices in a wavefront engineering fashion. We numerically demonstrate beam collimation with 30° out of the incident plane and nearly diffraction limited divergence angle. We also present high-numerical-aperture (NA) beam focusing with NA ≈0.65 and vector beam generation (the radially-polarized mode) with the mode similarity greater than 44%. This concept and approach constitutes a designable optical platform, which might be a future bridge between integrated photonics and metasurface functionalities.

  20. Plated lamination structures for integrated magnetic devices

    Science.gov (United States)

    Webb, Bucknell C.

    2014-06-17

    Semiconductor integrated magnetic devices such as inductors, transformers, etc., having laminated magnetic-insulator stack structures are provided, wherein the laminated magnetic-insulator stack structures are formed using electroplating techniques. For example, an integrated laminated magnetic device includes a multilayer stack structure having alternating magnetic and insulating layers formed on a substrate, wherein each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by an insulating layer, and a local shorting structure to electrically connect each magnetic layer in the multilayer stack structure to an underlying magnetic layer in the multilayer stack structure to facilitate electroplating of the magnetic layers using an underlying conductive layer (magnetic or seed layer) in the stack as an electrical cathode/anode for each electroplated magnetic layer in the stack structure.

  1. Photonic integrated transmitter and receiver for NG-PON2

    Science.gov (United States)

    Tavares, Ana; Lopes, Ana; Rodrigues, Cláudio; Mãocheia, Paulo; Mendes, Tiago; Brandão, Simão.; Rodrigues, Francisco; Ferreira, Ricardo; Teixeira, António

    2014-08-01

    In this paper the authors present a monolithic Photonic Integrated Circuit which includes a transmitter and a receiver for NG-PON2. With this layout it is possible to build an OLT and, by redesigning some filters, also an ONU. This technology allows reducing the losses in the transmitter and in the receiver, increasing power budget, and also reducing the OEO conversions, which has been a major problem that operators want to surpass.

  2. N-dimensional integrability from two-photon coalgebra symmetry

    International Nuclear Information System (INIS)

    Ballesteros, Angel; Blasco, Alfonso; Herranz, Francisco J

    2009-01-01

    A wide class of Hamiltonian systems with N degrees of freedom and endowed with, at least, (N - 2) functionally independent integrals of motion in involution is constructed by making use of the two-photon Lie-Poisson coalgebra (h 6 , Δ). The set of (N - 2) constants of the motion is shown to be a universal one for all these Hamiltonians, irrespective of the dependence of the latter on several arbitrary functions and N free parameters. Within this large class of quasi-integrable N-dimensional Hamiltonians, new families of completely integrable systems are identified by finding explicitly a new independent integral I through the analysis of the sub-coalgebra structure of h 6 . In particular, new completely integrable N-dimensional Hamiltonians describing natural systems, geodesic flows and static electromagnetic Hamiltonians are presented

  3. Optical devices based on liquid crystal photonic bandgap fibers

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard

    2005-01-01

    the waveguiding mechanism of LC filled PCFs. The principle of tunable fibers based on LCs is thereafter discussed and an alignment and coating study of LC in capillaries is presented. Next, the Liquid Crystal Photonic BandGap (LCPBG) fiber is presented and the waveguiding mechanism is analyzed through plane...... hole. The presence of a LC in the holes of the PCF transforms the fiber from a Total Internal Reflection (TIR) guiding type into a Photonic BandGap (PBG) guiding type, where light is confined to the silica core by coherent scattering from the LC-billed holes. The high dielectric and optical anisotropy...

  4. Increasing the density of passive photonic-integrated circuits via nanophotonic cloaking

    Science.gov (United States)

    Shen, Bing; Polson, Randy; Menon, Rajesh

    2016-11-01

    Photonic-integrated devices need to be adequately spaced apart to prevent signal cross-talk. This fundamentally limits their packing density. Here we report the use of nanophotonic cloaking to render neighbouring devices invisible to one another, which allows them to be placed closer together than is otherwise feasible. Specifically, we experimentally demonstrated waveguides that are spaced by a distance of ~λ0/2 and designed waveguides with centre-to-centre spacing as small as 600 nm (-2 dB and an extinction ratio >15 dB over a bandwidth larger than 60 nm. This performance can be improved with better design algorithms and industry-standard lithography. The nanophotonic cloak relies on multiple guided-mode resonances, which render such devices very robust to fabrication errors. Our devices are broadly complimentary-metal-oxide-semiconductor compatible, have a minimum pitch of 200 nm and can be fabricated with a single lithography step. The nanophotonic cloaks can be generally applied to all passive integrated photonics.

  5. Increasing the density of passive photonic-integrated circuits via nanophotonic cloaking.

    Science.gov (United States)

    Shen, Bing; Polson, Randy; Menon, Rajesh

    2016-11-09

    Photonic-integrated devices need to be adequately spaced apart to prevent signal cross-talk. This fundamentally limits their packing density. Here we report the use of nanophotonic cloaking to render neighbouring devices invisible to one another, which allows them to be placed closer together than is otherwise feasible. Specifically, we experimentally demonstrated waveguides that are spaced by a distance of ∼λ 0 /2 and designed waveguides with centre-to-centre spacing as small as 600 nm (-2 dB and an extinction ratio >15 dB over a bandwidth larger than 60 nm. This performance can be improved with better design algorithms and industry-standard lithography. The nanophotonic cloak relies on multiple guided-mode resonances, which render such devices very robust to fabrication errors. Our devices are broadly complimentary-metal-oxide-semiconductor compatible, have a minimum pitch of 200 nm and can be fabricated with a single lithography step. The nanophotonic cloaks can be generally applied to all passive integrated photonics.

  6. Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

    Science.gov (United States)

    2018-01-08

    engineer next-generation carbon-based optoelectronic and photonic devices with superior performance and capabilities. These devices include carbon...electronics; (4) nanostructured graphene plasmonics; and (5) polymer-nanotube conjugate chemistry . (1) Semiconducting carbon nanotube-based...applications (In Preparation, 2018). (5) Polymer-nanotube conjugate chemistry Conjugated polymers can be exploited as agents for selectively wrapping and

  7. Deterministic multimode photonic device for quantum-information processing

    DEFF Research Database (Denmark)

    Nielsen, Anne E. B.; Mølmer, Klaus

    2010-01-01

    We propose the implementation of a light source that can deterministically generate a rich variety of multimode quantum states. The desired states are encoded in the collective population of different ground hyperfine states of an atomic ensemble and converted to multimode photonic states by exci...

  8. Liquid crystal parameter analysis for tunable photonic bandgap fiber devices

    DEFF Research Database (Denmark)

    Weirich, Johannes; Lægsgaard, Jesper; Wei, Lei

    2010-01-01

    We investigate the tunability of splay-aligned liquid crystals for the use in solid core photonic crystal fibers. Finite element simulations are used to obtain the alignment of the liquid crystals subject to an external electric field. By means of the liquid crystal director field the optical...

  9. Frequency Conversion of Single Photons: Physics, Devices, and Applications

    Science.gov (United States)

    2012-07-01

    Anton Zeilinger , Alexan- der V. Sergienko, and Yanhua Shih. New high-intensity source of polarization- entangled photon pairs. Physical Review Letters...interface. Nature, 437(7055):116–120, 2005. [36] S. Ramelow, A. Fedrizzi, A. Poppe, N. K. Langford, and A. Zeilinger . Polarization-entanglement-conserving

  10. Hybrid polymer photonic crystal fiber with integrated chalcogenide glass nanofilms

    DEFF Research Database (Denmark)

    Markos, Christos; Kubat, Irnis; Bang, Ole

    2014-01-01

    The combination of chalcogenide glasses with polymer photonic crystal fibers (PCFs) is a difficult and challenging task due to their different thermo-mechanical material properties. Here we report the first experimental realization of a hybrid polymer-chalcogenide PCF with integrated As2S3 glass...... nanofilms at the inner surface of the air-channels of a poly-methyl-methacrylate (PMMA) PCF. The integrated high refractive index glass films introduce distinct antiresonant transmission bands in the 480-900 nm wavelength region. We demonstrate that the ultra-high Kerr nonlinearity of the chalcogenide glass...

  11. Compressive sensing in a photonic link with optical integration

    DEFF Research Database (Denmark)

    Chen, Ying; Yu, Xianbin; Chi, Hao

    2014-01-01

    In this Letter, we present a novel structure to realize photonics-assisted compressive sensing (CS) with optical integration. In the system, a spectrally sparse signal modulates a multiwavelength continuous-wave light and then is mixed with a random sequence in optical domain. The optical signal......, which is equivalent to the function of integration required in CS. A proof-of-concept experiment with four wavelengths, corresponding to a compression factor of 4, is demonstrated. More simulation results are also given to show the potential of the technique....

  12. Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

    Science.gov (United States)

    Gogurla, Narendar; Kundu, Subhas C.; Ray, Samit K.

    2017-04-01

    Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼105 as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.

  13. Photon absorption models in nanostructured semiconductor solar cells and devices

    CERN Document Server

    Luque, Antonio

    2015-01-01

    This book is intended to be used by materials and device physicists and also solar cells researchers. It models the performance characteristics of nanostructured solar cells and resolves the dynamics of transitions between several levels of these devices. An outstanding insight into the physical behaviour of these devices is provided, which complements experimental work. This therefore allows a better understanding of the results, enabling the development of new experiments and optimization of new devices. It is intended to be accessible to researchers, but also to provide engineering tools w

  14. Foundry fabricated photonic integrated circuit optical phase lock loop.

    Science.gov (United States)

    Bałakier, Katarzyna; Fice, Martyn J; Ponnampalam, Lalitha; Graham, Chris S; Wonfor, Adrian; Seeds, Alwyn J; Renaud, Cyril C

    2017-07-24

    This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.

  15. High Efficiency Optical MEMS by the Integration of Photonic Lattices with Surface MEMS

    Energy Technology Data Exchange (ETDEWEB)

    FLEMING, JAMES G.; LIN, SHAWN-YU; MANI, SEETHAMBAL S.; RODGERS, M. STEVEN; DAGEL, DARYL J.

    2002-11-01

    This report outlines our work on the integration of high efficiency photonic lattice structures with MEMS (MicroElectroMechanical Systems). The simplest of these structures were based on 1-D mirror structures. These were integrated into a variety of devices, movable mirrors, switchable cavities and finally into Bragg fiber structures which enable the control of light in at least 2 dimensions. Of these devices, the most complex were the Bragg fibers. Bragg fibers consist of hollow tubes in which light is guided in a low index media (air) and confined by surrounding Bragg mirror stacks. In this work, structures with internal diameters from 5 to 30 microns have been fabricated and much larger structures should also be possible. We have demonstrated the fabrication of these structures with short wavelength band edges ranging from 400 to 1600nm. There may be potential applications for such structures in the fields of integrated optics and BioMEMS. We have also looked at the possibility of waveguiding in 3 dimensions by integrating defects into 3-dimensional photonic lattice structures. Eventually it may be possible to tune such structures by mechanically modulating the defects.

  16. Medical device integration using mobile telecommunications infrastructure.

    Science.gov (United States)

    Moorman, Bridget A; Cockle, Richard A

    2013-01-01

    Financial pressures, an aging population, and a rising number of patients with chronic diseases, have encouraged the use of remote monitoring technologies. This usually entails at least one physiological parameter measurement for a clinician. Mobile telecommunication technologies lend themselves to this functionality, and in some cases, avoid some of the issues encountered with device integration. Moreover, the inherent characteristics of the mobile telecommunications infrastructure allow a coupling of business and clinical functions that were not possible before. Table I compares and contrasts some key aspect of device integration in and out of a healthcare facility. An HTM professional may be part of the team that acquires and/or manages a system using a mobile telecommunications technology. It is important for HTM professionals to ensure the data is in a standard format so that the interfaces across this system don't become brittle and break easily if one part changes. Moreover, the security and safety considerations of the system and the data should be a primary consideration in and y purchase, with attention given to the proper environmental and encryption mechanisms. Clinical engineers and other HTM professionals are unique in that they understand the patient/clinician/device interface and the need to ensure its safety and effectiveness regardless of geographical environment.

  17. Stochastic simulation and robust design optimization of integrated photonic filters

    Directory of Open Access Journals (Sweden)

    Weng Tsui-Wei

    2016-07-01

    Full Text Available Manufacturing variations are becoming an unavoidable issue in modern fabrication processes; therefore, it is crucial to be able to include stochastic uncertainties in the design phase. In this paper, integrated photonic coupled ring resonator filters are considered as an example of significant interest. The sparsity structure in photonic circuits is exploited to construct a sparse combined generalized polynomial chaos model, which is then used to analyze related statistics and perform robust design optimization. Simulation results show that the optimized circuits are more robust to fabrication process variations and achieve a reduction of 11%–35% in the mean square errors of the 3 dB bandwidth compared to unoptimized nominal designs.

  18. Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths

    Science.gov (United States)

    Humer, M.; Guider, R.; Jantsch, W.; Fromherz, T.

    2013-05-01

    In the last decade, Si based photonics has made major advances in terms of design, fabrication, and device implementation. But due to Silicon's indirect bandgap, it still remains a challenge to create efficient Si-based light emitting devices. In order to overcome this problem, an approach is to develop hybrid systems integrating light-emitting materials into Si. A promising class of materials for this purpose is the class of semiconducting nanocrystal quantum dots (NCs) that are synthesized by colloidal chemistry. As their absorption and emission wavelength depends on the dot size, which can easily be controlled during synthesis, they are extremely attractive as building blocks for nanophotonic applications. For applications in telecom wavelength, Lead chalcogenide colloidal NCs are optimum materials due to their unique optical, electronic and nonlinear properties. In this work, we experimentally demonstrate the integration of PbS nanocrystals into Si-based photonic structures like slot waveguides and ring resonators as optically pumped emitters for room temperature applications. In order to create such hybrid structures, the NCs were dissolved into polymer resists and drop cast on top of the device. Upon optical pumping, intense photoluminescence emission from the resonating modes is recorded at the output of the waveguide with transmission quality factors up to 14000. The polymer host material was investigated with respect to its ability to stabilize the NC's photoluminescence emission against degradation under ambient conditions. The waveguide-ring coupling efficiency was also investigated as function of the NCs concentrations blended into the polymer matrix. The integration of colloidal quantum dots into Silicon photonic structures as demonstrated in this work is a very versatile technique and thus opens a large range of applications utilizing the linear and nonlinear optical properties of PbS NCs at telecom wavelengths.

  19. Compact integrated optical devices for optical sensor and switching applications

    NARCIS (Netherlands)

    Kauppinen, L.J.

    2010-01-01

    This thesis describes the design, fabrication, and characterization of compact optical devices for sensing and switching applications. Our focus has been to realize the devices using CMOS-compatible fabrication processes. Particularly the silicon photonics fabrication platform, ePIXfab, has been

  20. Ge-Based Spin-Photodiodes for Room-Temperature Integrated Detection of Photon Helicity

    KAUST Repository

    Rinaldi, Christian

    2012-05-02

    Spin-photodiodes based on Fe/MgO/Ge(001) heterostructures are reported. These devices perform the room-temperature integrated electrical detection of the spin polarization of a photocurrent generated by circularly polarized photons with a wavelength of 1300 nm, for light pulses with intensity I 0 down to 200 μW. A forward and reverse-biased average photocurrent variation of 5.9% is measured for the complete reversal of the incident light helicity. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

    Science.gov (United States)

    Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

    2015-08-10

    We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

  2. The MMI Device Ontology: Enabling Sensor Integration

    Science.gov (United States)

    Rueda, C.; Galbraith, N.; Morris, R. A.; Bermudez, L. E.; Graybeal, J.; Arko, R. A.; Mmi Device Ontology Working Group

    2010-12-01

    The Marine Metadata Interoperability (MMI) project has developed an ontology for devices to describe sensors and sensor networks. This ontology is implemented in the W3C Web Ontology Language (OWL) and provides an extensible conceptual model and controlled vocabularies for describing heterogeneous instrument types, with different data characteristics, and their attributes. It can help users populate metadata records for sensors; associate devices with their platforms, deployments, measurement capabilities and restrictions; aid in discovery of sensor data, both historic and real-time; and improve the interoperability of observational oceanographic data sets. We developed the MMI Device Ontology following a community-based approach. By building on and integrating other models and ontologies from related disciplines, we sought to facilitate semantic interoperability while avoiding duplication. Key concepts and insights from various communities, including the Open Geospatial Consortium (eg., SensorML and Observations and Measurements specifications), Semantic Web for Earth and Environmental Terminology (SWEET), and W3C Semantic Sensor Network Incubator Group, have significantly enriched the development of the ontology. Individuals ranging from instrument designers, science data producers and consumers to ontology specialists and other technologists contributed to the work. Applications of the MMI Device Ontology are underway for several community use cases. These include vessel-mounted multibeam mapping sonars for the Rolling Deck to Repository (R2R) program and description of diverse instruments on deepwater Ocean Reference Stations for the OceanSITES program. These trials involve creation of records completely describing instruments, either by individual instances or by manufacturer and model. Individual terms in the MMI Device Ontology can be referenced with their corresponding Uniform Resource Identifiers (URIs) in sensor-related metadata specifications (e

  3. Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

    Science.gov (United States)

    Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

    2014-07-22

    Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

  4. Quantum Dot/Liquid Crystal Nanocomposites in Photonic Devices

    Directory of Open Access Journals (Sweden)

    Andrea L. Rodarte

    2015-07-01

    Full Text Available Quantum dot/liquid crystal nano-composites are promising new materials for a variety of applications in energy harvesting, displays and photonics including the liquid crystal laser. To realize many applications, however, we need to control and stabilize nano-particle dispersion in different liquid crystal host phases and understand how the particles behave in an anisotropic fluid. An ideal system will allow for the controlled assembly of either well-defined nano-particle clusters or a uniform particle distribution. In this paper, we investigate mesogen-functionalized quantum dots for dispersion in cholesteric liquid crystal. These nanoparticles are known to assemble into dense stable packings in the nematic phase, and such structures, when localized in the liquid crystal defects, can potentially enhance the coupling between particles and a cholesteric cavity. Controlling the dispersion and assembly of quantum dots using mesogenic surface ligands, we demonstrate how resonant fluid photonic cavities can result from the co-assembly of luminescent nanoparticles in the presence of cholesteric liquid crystalline ordering.

  5. Cycles of self-pulsations in a photonic integrated circuit.

    Science.gov (United States)

    Karsaklian Dal Bosco, Andreas; Kanno, Kazutaka; Uchida, Atsushi; Sciamanna, Marc; Harayama, Takahisa; Yoshimura, Kazuyuki

    2015-12-01

    We report experimentally on the bifurcation cascade leading to the appearance of self-pulsation in a photonic integrated circuit in which a laser diode is subjected to delayed optical feedback. We study the evolution of the self-pulsing frequency with the increase of both the feedback strength and the injection current. Experimental observations show good qualitative accordance with numerical results carried out with the Lang-Kobayashi rate equation model. We explain the mechanism underlying the self-pulsations by a phenomenon of beating between successive pairs of external cavity modes and antimodes.

  6. Simulation of photons from plasmas for the applications to display devices

    Science.gov (United States)

    Lee, Hae June; Yoon, Hyun Jin; Lee, Jae Koo

    2007-07-01

    Numerical modeling of the photon transport of the ultraviolet (UV) and the visible lights are presented for plasma based display devices. The transport of UV lights which undergo resonance trapping by ground state atoms is solved by using the Holstein equation. After the UV lights are transformed to visible lights at the phosphor surfaces, the visible lights experience complicated traces inside the cell and finally are emitted toward the viewing window after having some power loss within the cell. A three-dimensional ray trace of the visible lights is calculated with a radiosity model. These simulations for the photons strengthen plasma discharge modeling for the application to display devices.

  7. Integrating nanosphere lithography in device fabrication

    Science.gov (United States)

    Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

    2016-03-01

    This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

  8. Photon and neutron doses of the personnel using moisture and density measurement devices

    Energy Technology Data Exchange (ETDEWEB)

    Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V. [Greek Atomic Energy Commission, Agia Paraskevi, Attiki, 60092 (Greece)

    2006-07-01

    The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a {sup 137}Cs source for density measurements and an {sup 241}Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

  9. Photon and neutron doses of the personnel using moisture and density measurement devices

    International Nuclear Information System (INIS)

    Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V.

    2006-01-01

    The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a 137 Cs source for density measurements and an 241 Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

  10. Tunable photonic bandgap fiber based devices for optical networks

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Scolari, Lara; Rottwitt, Karsten

    2005-01-01

    In future all optical networks one of the enabling technologies is tunable elements including reconfigurable routers, switches etc. Thus, the development of a technology platform that allows construction of tuning components is critical. Lately, microstructured optical fibers, filled with liquid......, for example a liquid crystal that changes optical properties when subjected to, for example, an optical or an electrical field. The utilization of these two basic properties allows design of tunable optical devices for optical networks. In this work, we focus on applications of such devices and discuss recent...... crystals, have proven to be a candidate for such a platform. Microstructured optical fibers offer unique wave-guiding properties that are strongly related to the design of the air holes in the cladding of the fiber. These wave-guiding properties may be altered by filling the air holes with a material...

  11. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

    International Nuclear Information System (INIS)

    Wang, Yongjin; Zhu, Guixia; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo; Cai, Wei

    2016-01-01

    We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

  12. Continuously tunable devices based on electrical control of dual-frequency liquid crystal filled photonic bandgap fibers

    DEFF Research Database (Denmark)

    Scolari, Lara; Alkeskjold, Thomas Tanggaard; Riishede, Jesper

    2005-01-01

    We present an electrically controlled photonic bandgap fiber device obtained by infiltrating the air holes of a photonic crystal fiber (PCF) with a dual-frequency liquid crystal (LC) with pre-tilted molecules. Compared to previously demonstrated devices of this kind, the main new feature of this ...... in the same device. We investigate the dynamics of this device and demonstrate a birefringence controller based on this principle....

  13. InP-based generic foundry platform for photonic integrated circuits

    NARCIS (Netherlands)

    Augustin, L.M.; Lemos Alvares Dos Santos, R.M.; den Haan, E.; Kleijn, S.E.F.; Thijs, P.J.A.; Latkowski, S.; Zhao, D.; Yao, W.; Bolk, J.; Ambrosius, H.P.M.M.; Mingaleev, S.; Richter, A.; Bakker, A.; Korthorst, T.

    2017-01-01

    The standardization of photonic integration processes for InP has led to versatile and easily accessible generic integration platforms. The generic integration platforms enable the realization of a broad range of applications and lead to a dramatic cost reduction in the development costs of photonic

  14. Photolithography of thick photoresist coating for electrically controlled liquid crystal photonic bandgap fibre devices

    DEFF Research Database (Denmark)

    Wei, Lei; Khomtchenko, Elena; Alkeskjold, Thomas Tanggaard

    2009-01-01

    Thick photoresist coating for electrode patterning in an anisotropically etched V-groove is investigated for electrically controlled liquid crystal photonic bandgap fibre devices. The photoresist step coverage at the convex corners is compared with and without soft baking after photoresist spin...

  15. Hybrid optical security system using photonic crystals and MEMS devices

    Science.gov (United States)

    Ciosek, Jerzy; Ostrowski, Roman

    2017-10-01

    An important issue in security systems is that of selection of the appropriate detectors or sensors, whose sensitivity guarantees functional reliability whilst avoiding false alarms. Modern technology enables the optimization of sensor systems, tailored to specific risk factors. In optical security systems, one of the safety parameters considered is the spectral range in which the excitation signal is associated with a risk factor. Advanced safety systems should be designed taking into consideration the possible occurrence of, often multiple, complex risk factors, which can be identified individually. The hazards of concern in this work are chemical warfare agents and toxic industrial compounds present in the forms of gases and aerosols. The proposed sensor solution is a hybrid optical system consisting of a multi-spectral structure of photonic crystals associated with a MEMS (Micro Electro-Mechanical System) resonator. The crystallographic structures of carbon present in graphene rings and graphenecarbon nanotube nanocomposites have properties which make them desirable for use in detectors. The advantage of this system is a multi-spectral sensitivity at the same time as narrow-band selectivity for the identification of risk factors. It is possible to design a system optimized for detecting specified types of risk factor from very complex signals.

  16. Photonic integration and components development for a Ku-band phased array antenna system

    NARCIS (Netherlands)

    Marpaung, D.A.I.; Zhuang, L.; Burla, M.; Roeloffzen, C.G.H.; Noharet, Bertrand; Wang, Qin; Beeker, W.P.; Beeker, Willem; Leinse, Arne; Heideman, Rene

    2011-01-01

    In this paper the development of a phased array antenna system using a photonic beamformer is reported. The paper emphasizes on the photonic integration between two main components of the beamformer, namely the photonic beamformer chip and the electroabsorption modulator array. System level

  17. Multifrequency sources of quantum correlated photon pairs on-chip: a path toward integrated Quantum Frequency Combs

    Directory of Open Access Journals (Sweden)

    Caspani Lucia

    2016-06-01

    Full Text Available Recent developments in quantum photonics have initiated the process of bringing photonic-quantumbased systems out-of-the-lab and into real-world applications. As an example, devices to enable the exchange of a cryptographic key secured by the laws of quantum mechanics are already commercially available. In order to further boost this process, the next step is to transfer the results achieved by means of bulky and expensive setups into miniaturized and affordable devices. Integrated quantum photonics is exactly addressing this issue. In this paper, we briefly review the most recent advancements in the generation of quantum states of light on-chip. In particular, we focus on optical microcavities, as they can offer a solution to the problem of low efficiency that is characteristic of the materials typically used in integrated platforms. In addition, we show that specifically designed microcavities can also offer further advantages, such as compatibility with telecom standards (for exploiting existing fibre networks and quantum memories (necessary to extend the communication distance, as well as giving a longitudinal multimode character for larger information transfer and processing. This last property (i.e., the increased dimensionality of the photon quantum state is achieved through the ability to generate multiple photon pairs on a frequency comb, corresponding to the microcavity resonances. Further achievements include the possibility of fully exploiting the polarization degree of freedom, even for integrated devices. These results pave the way for the generation of integrated quantum frequency combs that, in turn, may find important applications toward the realization of a compact quantum-computing platform.

  18. Low-Loss Photonic Reservoir Computing with Multimode Photonic Integrated Circuits.

    Science.gov (United States)

    Katumba, Andrew; Heyvaert, Jelle; Schneider, Bendix; Uvin, Sarah; Dambre, Joni; Bienstman, Peter

    2018-02-08

    We present a numerical study of a passive integrated photonics reservoir computing platform based on multimodal Y-junctions. We propose a novel design of this junction where the level of adiabaticity is carefully tailored to capture the radiation loss in higher-order modes, while at the same time providing additional mode mixing that increases the richness of the reservoir dynamics. With this design, we report an overall average combination efficiency of 61% compared to the standard 50% for the single-mode case. We demonstrate that with this design, much more power is able to reach the distant nodes of the reservoir, leading to increased scaling prospects. We use the example of a header recognition task to confirm that such a reservoir can be used for bit-level processing tasks. The design itself is CMOS-compatible and can be fabricated through the known standard fabrication procedures.

  19. Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

    Directory of Open Access Journals (Sweden)

    Cosimo Lacava

    2017-01-01

    Full Text Available In this paper, we present a review on silicon-based nonlinear devices for all optical nonlinear processing of complex telecommunication signals. We discuss some recent developments achieved by our research group, through extensive collaborations with academic partners across Europe, on optical signal processing using silicon-germanium and amorphous silicon based waveguides as well as novel materials such as silicon rich silicon nitride and tantalum pentoxide. We review the performance of four wave mixing wavelength conversion applied on complex signals such as Differential Phase Shift Keying (DPSK, Quadrature Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM and 64-QAM that dramatically enhance the telecom signal spectral efficiency, paving the way to next generation terabit all-optical networks.

  20. Universal discrete Fourier optics RF photonic integrated circuit architecture.

    Science.gov (United States)

    Hall, Trevor J; Hasan, Mehedi

    2016-04-04

    This paper describes a coherent electro-optic circuit architecture that generates a frequency comb consisting of N spatially separated orders using a generalised Mach-Zenhder interferometer (MZI) with its N × 1 combiner replaced by an optical N × N Discrete Fourier Transform (DFT). Advantage may be taken of the tight optical path-length control, component and circuit symmetries and emerging trimming algorithms offered by photonic integration in any platform that offers linear electro-optic phase modulation such as LiNbO3, silicon, III-V or hybrid technology. The circuit architecture subsumes all MZI-based RF photonic circuit architectures in the prior art given an appropriate choice of output port(s) and dimension N although the principal application envisaged is phase correlated subcarrier generation for all optical orthogonal frequency division multiplexing. A transfer matrix approach is used to model the operation of the architecture. The predictions of the model are validated by simulations performed using an industry standard software tool. Implementation is found to be practical.

  1. Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

    Science.gov (United States)

    LaBel, Kenneth A.; Cohn, Lewis M.

    2008-01-01

    At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

  2. HPCAT: an integrated high-pressure synchrotron facility at the Advanced Photon Source

    International Nuclear Information System (INIS)

    Shen, Guoyin; Chow, Paul; Xiao, Yuming; Sinogeikin, Stanislav; Meng, Yue; Yang, Wenge; Liermann, Hans-Peter; Shebanova, Olga; Rod, Eric; Bommannavar, Arunkumar; Mao, Ho-Kwang

    2008-01-01

    The high pressure collaborative access team (HPCAT) was established to advance cutting edge, multidisciplinary, high-pressure (HP) science and technology using synchrotron radiation at sector 16 of the Advanced Photon Source of Argonne National Laboratory. The integrated HPCAT facility has established four operating beamlines in nine hutches. Two beamlines are split in energy space from the insertion device (16ID) line, whereas the other two are spatially divided into two fans from the bending magnet (16BM) line. An array of novel X-ray diffraction and spectroscopic techniques has been integrated with HP and extreme temperature instrumentation at HPCAT. With a multidisciplinary approach and multi-institution collaborations, the HP program at the HPCAT has been enabling myriad scientific breakthroughs in HP physics, chemistry, materials, and Earth and planetary sciences.

  3. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  4. Design and characterization of integrated components for SiN photonic quantum circuits.

    Science.gov (United States)

    Poot, Menno; Schuck, Carsten; Ma, Xiao-Song; Guo, Xiang; Tang, Hong X

    2016-04-04

    The design, fabrication, and detailed calibration of essential building blocks towards fully integrated linear-optics quantum computation are discussed. Photonic devices are made from silicon nitride rib waveguides, where measurements on ring resonators show small propagation losses. Directional couplers are designed to be insensitive to fabrication variations. Their offset and coupling lengths are measured, as well as the phase difference between the transmitted and reflected light. With careful calibrations, the insertion loss of the directional couplers is found to be small. Finally, an integrated controlled-NOT circuit is characterized by measuring the transmission through different combinations of inputs and outputs. The gate fidelity for the CNOT operation with this circuit is estimated to be 99.81% after post selection. This high fidelity is due to our robust design, good fabrication reproducibility, and extensive characterizations.

  5. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  6. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  7. Photonic integrated circuits unveil crisis-induced intermittency.

    Science.gov (United States)

    Karsaklian Dal Bosco, Andreas; Akizawa, Yasuhiro; Kanno, Kazutaka; Uchida, Atsushi; Harayama, Takahisa; Yoshimura, Kazuyuki

    2016-09-19

    We experimentally investigate an intermittent route to chaos in a photonic integrated circuit consisting of a semiconductor laser with time-delayed optical feedback from a short external cavity. The transition from a period-doubling dynamics to a fully-developed chaos reveals a stage intermittently exhibiting these two dynamics. We unveil the bifurcation mechanism underlying this route to chaos by using the Lang-Kobayashi model and demonstrate that the process is based on a phenomenon of attractor expansion initiated by a particular distribution of the local Lyapunov exponents. We emphasize on the crucial importance of the distribution of the steady-state solutions introduced by the time-delayed feedback on the existence of this intermittent dynamics.

  8. Quantification of the Impact of Photon Distinguishability on Measurement-Device- Independent Quantum Key Distribution

    Directory of Open Access Journals (Sweden)

    Garrett K. Simon

    2018-04-01

    Full Text Available Measurement-Device-Independent Quantum Key Distribution (MDI-QKD is a two-photon protocol devised to eliminate eavesdropping attacks that interrogate or control the detector in realized quantum key distribution systems. In MDI-QKD, the measurements are carried out by an untrusted third party, and the measurement results are announced openly. Knowledge or control of the measurement results gives the third party no information about the secret key. Error-free implementation of the MDI-QKD protocol requires the crypto-communicating parties, Alice and Bob, to independently prepare and transmit single photons that are physically indistinguishable, with the possible exception of their polarization states. In this paper, we apply the formalism of quantum optics and Monte Carlo simulations to quantify the impact of small errors in wavelength, bandwidth, polarization and timing between Alice’s photons and Bob’s photons on the MDI-QKD quantum bit error rate (QBER. Using published single-photon source characteristics from two-photon interference experiments as a test case, our simulations predict that the finite tolerances of these sources contribute ( 4.04 ± 20 / N sifted % to the QBER in an MDI-QKD implementation generating an N sifted -bit sifted key.

  9. A segmented Hybrid Photon Detector with integrated auto-triggering front-end electronics for a PET scanner

    CERN Document Server

    Chesi, Enrico Guido; Joram, C; Mathot, S; Séguinot, Jacques; Weilhammer, P; Ciocia, F; De Leo, R; Nappi, E; Vilardi, I; Argentieri, A; Corsi, F; Dragone, A; Pasqua, D

    2006-01-01

    We describe the design, fabrication and test results of a segmented Hybrid Photon Detector with integrated auto-triggering front-end electronics. Both the photodetector and its VLSI readout electronics are custom designed and have been tailored to the requirements of a recently proposed novel geometrical concept of a Positron Emission Tomograph. Emphasis is put on the PET specific features of the device. The detector has been fabricated in the photocathode facility at CERN.

  10. Optimization and applications of planar silicon-based photonic crystal devices

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Frandsen, Lars Hagedorn; Burgos Leon, Juan

    2005-01-01

    such as topology optimization. We have also investigated a new device concept for coarse wavelength division de-multiplexing based on planar photonic crystal waveguides. The filtering of the wavelength channels has been realized by shifting the cut-off frequency of the fundamental photonic band gap mode...... in consecutive sections of the waveguide. Preliminary investigations show that this concepts allows coarse de-multiplexing to take place, but that optimization is required in order to reduce cross talk between adjacent channels and to increase the overall transmission. In this work the design, fabrication...

  11. Photonic devices based on patterning by two photon induced polymerization techniques

    Science.gov (United States)

    Fortunati, I.; Dainese, T.; Signorini, R.; Bozio, R.; Tagliazucca, V.; Dirè, S.; Lemercier, G.; Mulatier, J.-C.; Andraud, C.; Schiavuta, P.; Rinaldi, A.; Licoccia, S.; Bottazzo, J.; Franco Perez, A.; Guglielmi, M.; Brusatin, G.

    2008-04-01

    Two and three dimensional structures with micron and submicron resolution have been achieved in commercial resists, polymeric materials and sol-gel materials by several lithographic techniques. In this context, silicon-based sol-gel materials are particularly interesting because of their versatility, chemical and thermal stability, amount of embeddable active compounds. Compared with other micro- and nano-fabrication schemes, the Two Photon Induced Polymerization is unique in its 3D processing capability. The photopolymerization is performed with laser beam in the near-IR region, where samples show less absorption and less scattering, giving rise to a deeper penetration of the light. The use of ultrashort laser pulses allows the starting of nonlinear processes like multiphoton absorption at relatively low average power without thermally damaging the samples. In this work we report results on the photopolymerization process in hybrid organic-inorganic films based photopolymerizable methacrylate-containing Si-nanobuilding blocks. Films, obtained through sol-gel synthesis, are doped with a photo-initiator allowing a radical polymerization of methacrylic groups. The photo-initiator is activated by femtosecond laser source, at different input energies. The development of the unexposed regions is performed with a suitable solvent and the photopolymerized structures are characterized by microscopy techniques.

  12. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  13. NASA Electronic Parts and Packaging (NEPP): Space Qualification Guidelines of Optoelectronic and Photonic Devices for Optical Communication Systems

    Science.gov (United States)

    Kim, Quiesup

    2001-01-01

    Key elements of space qualification of opto-electric and photonic optical devices were overviewed. Efforts were concentrated on the reliability concerns of the devices needed for potential applications in space environments. The ultimate goal for this effort is to gradually establish enough data to develop a space qualification plan of newly developed specific photonic parts using empirical and numerical models to assess the life-time and degradation of the devices for potential long term space missions.

  14. Roadmap for integration of InP based photonics and silicon electronics

    NARCIS (Netherlands)

    Williams, K.A.

    2015-01-01

    We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

  15. Low-cost access to development and manufacturing of photonic integrated circuits

    NARCIS (Netherlands)

    Smit, M.K.

    2014-01-01

    Generic photonic integration technology is rapidly gaining popularity. It applies the methodology that is so successful in microelectronics (CMOS technology) to the domain of photonics: providing lowcost access to highly standardized high-performance processes that support integration in a single

  16. Geometrical tuning art for entirely subwavelength grating waveguide based integrated photonics circuits.

    Science.gov (United States)

    Wang, Zheng; Xu, Xiaochuan; Fan, Donglei; Wang, Yaguo; Subbaraman, Harish; Chen, Ray T

    2016-05-05

    Subwavelength grating (SWG) waveguide is an intriguing alternative to conventional optical waveguides due to the extra degree of freedom it offers in tuning a few important waveguide properties, such as dispersion and refractive index. Devices based on SWG waveguides have demonstrated impressive performances compared to conventional waveguides. However, the high loss of SWG waveguide bends jeopardizes their applications in integrated photonic circuits. In this work, we propose a geometrical tuning art, which realizes a pre-distorted refractive index profile in SWG waveguide bends. The pre-distorted refractive index profile can effectively reduce the mode mismatch and radiation loss simultaneously, thus significantly reduce the bend loss. This geometry tuning art has been numerically optimized and experimentally demonstrated in present study. Through such tuning, the average insertion loss of a 5 μm SWG waveguide bend is reduced drastically from 5.43 dB to 1.10 dB per 90° bend for quasi-TE polarization. In the future, the proposed scheme will be utilized to enhance performance of a wide range of SWG waveguide based photonics devices.

  17. Continuous-variable measurement-device-independent quantum key distribution with photon subtraction

    Science.gov (United States)

    Ma, Hong-Xin; Huang, Peng; Bai, Dong-Yun; Wang, Shi-Yu; Bao, Wan-Su; Zeng, Gui-Hua

    2018-04-01

    It has been found that non-Gaussian operations can be applied to increase and distill entanglement between Gaussian entangled states. We show the successful use of the non-Gaussian operation, in particular, photon subtraction operation, on the continuous-variable measurement-device-independent quantum key distribution (CV-MDI-QKD) protocol. The proposed method can be implemented based on existing technologies. Security analysis shows that the photon subtraction operation can remarkably increase the maximal transmission distance of the CV-MDI-QKD protocol, which precisely make up for the shortcoming of the original CV-MDI-QKD protocol, and one-photon subtraction operation has the best performance. Moreover, the proposed protocol provides a feasible method for the experimental implementation of the CV-MDI-QKD protocol.

  18. The first photon shutter development for APS insertion device beamline front ends

    International Nuclear Information System (INIS)

    Shu, Deming; Nian, H.L.T.; Wang, Zhibi; Collins, J.T.; Ryding, D.G.; Kuzay, T.M.

    1992-01-01

    One of the most critical components on the Advanced Photon Source (APS) insertion device (ID) beamline front ends is the first photon shutter. It operates in two modes to fully intercept the high total power and high-heat flux ID photon beam in seconds (normal mode) or in less than 100 ms (emergency fast mode). It is designed to operate in ultra high vacuum (UHV). The design incorporates a multi-channel rectangular bar, bent in a ''hockey stick'' configuration, with two-point suspension. The flanged end is an articulated bellows with rolling hinges. The actuation end is a spring-assisted, pneumatic fail-safe flexural pivot type. The coolant (water) channels incorporate brazed copper foam to enhance the heat transfer, a tube technology particular to the APS. The design development, and material aspects, as well as the extensive thermal and vibrational analyses in support of the design, are presented in this paper

  19. Photonics

    CERN Document Server

    Andrews, David L

    2015-01-01

    Discusses the basic physical principles underlying Biomedical Photonics, spectroscopy and microscopy This volume discusses biomedical photonics, spectroscopy and microscopy, the basic physical principles underlying the technology and its applications. The topics discussed in this volume are: Biophotonics; Fluorescence and Phosphorescence; Medical Photonics; Microscopy; Nonlinear Optics; Ophthalmic Technology; Optical Tomography; Optofluidics; Photodynamic Therapy; Image Processing; Imaging Systems; Sensors; Single Molecule Detection; Futurology in Photonics. Comprehensive and accessible cov

  20. Photonics

    CERN Document Server

    Andrews, David L

    2015-01-01

    This book covers modern photonics accessibly and discusses the basic physical principles underlying all the applications and technology of photonicsThis volume covers the basic physical principles underlying the technology and all applications of photonics from statistical optics to quantum optics. The topics discussed in this volume are: Photons in perspective; Coherence and Statistical Optics; Complex Light and Singular Optics; Electrodynamics of Dielectric Media; Fast and slow Light; Holography; Multiphoton Processes; Optical Angular Momentum; Optical Forces, Trapping and Manipulation; Pol

  1. THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

    DEFF Research Database (Denmark)

    Bao, Hualong; Markos, Christos; Nielsen, Kristian

    2014-01-01

    In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

  2. Single-photon superradiance and cooperative Lamb shift in an optoelectronic device (Conference Presentation)

    Science.gov (United States)

    Sirtori, Carlo

    2017-02-01

    Superradiance is one of the many fascinating phenomena predicted by quantum electrodynamics that have first been experimentally demonstrated in atomic systems and more recently in condensed matter systems like quantum dots, superconducting q-bits, cyclotron transitions and plasma oscillations in quantum wells (QWs). It occurs when a dense collection of N identical two-level emitters are phased via the exchange of photons, giving rise to enhanced light-matter interaction, hence to a faster emission rate. Of great interest is the regime where the ensemble interacts with one photon only and therefore all of the atoms, but one, are in the ground state. In this case the quantum superposition of all possible configurations produces a symmetric state that decays radiatively with a rate N times larger than that of the individual oscillators. This phenomenon, called single photon superradiance, results from the exchange of real photons among the N emitters. Yet, to single photon superradiance is also associated another collective effect that renormalizes the emission frequency, known as cooperative Lamb shift. In this work, we show that single photon superradiance and cooperative Lamb shift can be engineered in a semiconductor device by coupling spatially separated plasma resonances arising from the collective motion of confined electrons in QWs. These resonances hold a giant dipole along the growth direction z and have no mutual Coulomb coupling. They thus behave as a collection of macro-atoms on different positions along the z axis. Our device is therefore a test bench to simulate the low excitation regime of quantum electrodynamics.

  3. FY1995 ultrafast photonic devices using dielectric domain superlattice; 1995 nendo yudentai domain chokoshi wo mochiita chokosoku photonic device

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-31

    All optical wavelength conversion around 1550nm is of great importance for the wavelength division multiplexing optical communication system. A dielectric domain superlattice, which has a periodically domain inverted structure, has a wide potential for the various nonlinear interactions such as second harmonic generation (SHG) and difference frequency generation (DFG). The purpose of our research is to establish the theoretical bases and fabrication processes of the guided-wave wavelength converter based on the DFG by domain-inverted LiTaO{sub 3}. We have investigated basic characteristics of guided-wave DFG devices and developed the domain-inversion process by an electric field poling utilizing a liquid electrolyte consisting of LiCI in deionized water as a electrode for applying the electric field to LiTaO{sub 3} substrate. By controlling the injection current for the domain inversion precisely, we fabricated successfully uniform domain-inverted structures. 0.5mm-thick domain-inverted LiTaO{sub 3} of 7.8, 17.2 and 21.3 {mu}m periods and 0.5 duty ratio were obtained by optimizing electrode structure and the domain-inversion process. Waveguide structures can increase the conversion efficiency of DFG by several orders of magnitude over bulk interactions. We have also developed waveguide fabrication process for the domain-inverted LiTaO{sub 3} substrate. Low loss proton-exchanged waveguides were formed by annealed proton exchange technique without a degradation of the domain inversion structure. Domain-controlled nonlinear optics by designing the ferroelectric domain structure of LiTaO{sub 3} and LiNbO{sub 3} make it possible to extend all the spectral range from ultra-violet to far-infrared and THz wave region. (NEDO)

  4. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  5. Preliminary thermo-mechanical analysis of the second phase photon shutters for insertion device beamline front ends at the Advanced Photon Source

    International Nuclear Information System (INIS)

    Nian, H.L.T.; Sheng, I.C.A.; Kuzay, T.M.

    1993-01-01

    The photon shutters (PS) on the insertion device front end of the beamlines at the Advanced Photon Source (APS) are designed to fully intercept powerful 7-GeV undulator radiation. Traditional materials (oxygen-free copper and Glidcop) are used in their construction. Initially, the APS proposes to operate the storage ring at 100 mA. In later phases of operation, the APS will operate the storage ring at 300 mA. The heat flux from the undulators is enormous. For example, in the later phase of the project, the first photon shutter (PS1) placed at a distance of 17 m from the Undulator A source will be subjected to 1400 W/mm 2 at normal incidence with a total power of 11.4 kW. The PS uses an enhanced heat transfer mechanism developed at Argonne National Laboratory, which increases the convective heat transfer coefficient to about 3 W/cm 2 · degrees C with single phase water as the coolant. To be able to handle the expected three-fold increase in the intense heat flux, some low-Z materials (such as beryllium or graphite), which can absorb the x-rays through their thickness, are now considered as the facing material on the absorber base plate of the PS. Our analysis of PSI indicates that the face plate made of either graphite or beryllium retains its integrity in most of the cases. The maximum effective stress of the absorber plate (made of annealed OFHC) exceeds the yield strength (50 MPa) except in the case of an absorber with a 10-mm graphite face plate

  6. CMOS and BiCMOS process integration and device characterization

    CERN Document Server

    El-Kareh, Badih

    2009-01-01

    Covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. This book also covers silicon devices and integrated process technologies. It discusses modern silicon devices, their characteristics, and interactions with process parameters.

  7. Integration in design and manufacturing of polymer smart devices

    NARCIS (Netherlands)

    Bolt, P.J.; Zwart, R.M. de; Tacken, R.A.; Rendering, H.

    2009-01-01

    Integration of functions in single components is pursued in order to manufacture smaller and smarter polymer micro devices at less cost, through e.g. less assembly steps. It requires integration on both product and production side. This paper addresses the use of molded interconnect device (MID)

  8. Recent progress in organic electronics and photonics: A perspective on the future of organic devices

    KAUST Repository

    Bredas, Jean-Luc

    2016-02-25

    The fields of organic electronics and photonics have witnessed remarkable advances over the past few years. This progress bodes well for the increased utilization of organic materials as the active layers in devices for applications as diverse as light-emitting diodes, field-effect transistors, solar cells, or all-optical switches. In the present document, we choose to focus the discussion on organic all-optical switching applications. © 2015 The Japan Society of Applied Physics.

  9. Micro-/nanoscale multi-field coupling in nonlinear photonic devices

    Science.gov (United States)

    Yang, Qing; Wang, Yubo; Tang, Mingwei; Xu, Pengfei; Xu, Yingke; Liu, Xu

    2017-08-01

    The coupling of mechanics/electronics/photonics may improve the performance of nanophotonic devices not only in the linear region but also in the nonlinear region. This review letter mainly presents the recent advances on multi-field coupling in nonlinear photonic devices. The nonlinear piezoelectric effect and piezo-phototronic effects in quantum wells and fibers show that large second-order nonlinear susceptibilities can be achieved, and second harmonic generation and electro-optic modulation can be enhanced and modulated. Strain engineering can tune the lattice structures and induce second order susceptibilities in central symmetry semiconductors. By combining the absorption-based photoacoustic effect and intensity-dependent photobleaching effect, subdiffraction imaging can be achieved. This review will also discuss possible future applications of these novel effects and the perspective of their research. The review can help us develop a deeper knowledge of the substance of photon-electron-phonon interaction in a micro-/nano- system. Moreover, it can benefit the design of nonlinear optical sensors and imaging devices with a faster response rate, higher efficiency, more sensitivity and higher spatial resolution which could be applied in environmental detection, bio-sensors, medical imaging and so on.

  10. Silicon Carbide Power Devices and Integrated Circuits

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

  11. Data reading with the aid of one-photon and two-photon luminescence in three-dimensional optical memory devices based on photochromic materials

    International Nuclear Information System (INIS)

    Akimov, Denis A; Zheltikov, Aleksei M; Koroteev, Nikolai I; Naumov, A N; Fedotov, Andrei B; Magnitskiy, Sergey A; Sidorov-Biryukov, D A; Sokolyuk, N T

    1998-01-01

    The problem of nondestructive reading of the data stored in the interior of a photochromic sample was analysed. A comparison was made of the feasibility of reading based on one-photon and two-photon luminescence. A model was proposed for the processes of reading the data stored in photochromic molecules with the aid of one-photon and two-photon luminescence. In addition to photochromic transitions, account was taken of the transfer of populations between optically coupled transitions in molecules under the action of the exciting radiation. This model provided a satisfactory description of the kinetics of decay of the coloured form of bulk samples of spiropyran and made it possible to determine experimentally the quantum yield of the reverse photoreaction as well as the two-photon absorption cross section of the coloured form. Measurements were made of the characteristic erasure times of the data stored in a photochromic medium under one-photon and two-photon luminescence reading conditions. It was found that the use of two-photon luminescence made it possible to enhance considerably the contrast and localisation of the optical data reading scheme in three-dimensional optical memory devices. The experimental results were used to estimate the two-photon absorption cross section of the coloured form of a sample of indoline spiropyran in a polymethyl methacrylate matrix. (laser applications and other topics in quantum electronics)

  12. Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

    Directory of Open Access Journals (Sweden)

    Adrian Iovan

    2012-12-01

    Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

  13. A homodyne detector integrated onto a photonic chip for measuring quantum states and generating random numbers

    Science.gov (United States)

    Raffaelli, Francesco; Ferranti, Giacomo; Mahler, Dylan H.; Sibson, Philip; Kennard, Jake E.; Santamato, Alberto; Sinclair, Gary; Bonneau, Damien; Thompson, Mark G.; Matthews, Jonathan C. F.

    2018-04-01

    Optical homodyne detection has found use as a characterisation tool in a range of quantum technologies. So far implementations have been limited to bulk optics. Here we present the optical integration of a homodyne detector onto a silicon photonics chip. The resulting device operates at high speed, up 150 MHz, it is compact and it operates with low noise, quantified with 11 dB clearance between shot noise and electronic noise. We perform on-chip quantum tomography of coherent states with the detector and show that it meets the requirements for characterising more general quantum states of light. We also show that the detector is able to produce quantum random numbers at a rate of 1.2 Gbps, by measuring the vacuum state of the electromagnetic field and applying off-line post processing. The produced random numbers pass all the statistical tests provided by the NIST test suite.

  14. Simplified nonplanar wafer bonding for heterogeneous device integration

    Science.gov (United States)

    Geske, Jon; Bowers, John E.; Riley, Anton

    2004-07-01

    We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

  15. Experimental demonstration of interferometric imaging using photonic integrated circuits.

    Science.gov (United States)

    Su, Tiehui; Scott, Ryan P; Ogden, Chad; Thurman, Samuel T; Kendrick, Richard L; Duncan, Alan; Yu, Runxiang; Yoo, S J B

    2017-05-29

    This paper reports design, fabrication, and demonstration of a silica photonic integrated circuit (PIC) capable of conducting interferometric imaging with multiple baselines around λ = 1550 nm. The PIC consists of four sets of five waveguides (total of twenty waveguides), each leading to a three-band spectrometer (total of sixty waveguides), after which a tunable Mach-Zehnder interferometer (MZI) constructs interferograms from each pair of the waveguides. A total of thirty sets of interferograms (ten pairs of three spectral bands) is collected by the detector array at the output of the PIC. The optical path difference (OPD) of each interferometer baseline is kept to within 1 µm to maximize the visibility of the interference measurement. We constructed an experiment to utilize the two baselines for complex visibility measurement on a point source and a variable width slit. We used the point source to demonstrate near unity value of the PIC instrumental visibility, and used the variable slit to demonstrate visibility measurement for a simple extended object. The experimental result demonstrates the visibility of baseline 5 and 20 mm for a slit width of 0 to 500 µm in good agreement with theoretical predictions.

  16. Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

    Science.gov (United States)

    Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

    2015-04-06

    Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

  17. Integrating Sphere-based Weathering Device

    Data.gov (United States)

    Federal Laboratory Consortium — Description:In the artificial ultraviolet (UV) weathering of materials, a need exists for weathering devices that can uniformly illuminate test specimens with a high...

  18. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  19. Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

    International Nuclear Information System (INIS)

    Liu, Jifeng; Kimerling, Lionel C; Michel, Jurgen

    2012-01-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic–photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500–1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  20. Passive integrated circuits utilizing slow light in photonic crystal waveguides

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Têtu, Amélie; Yang, Lirong

    2006-01-01

    We report thorough investigations of photonic crystal waveguide properties in the slow light regime. The transmission and the group index near the cutoff wavelengths oscillate in phase in close analogy with the ID photonic crystal behavior. The influence of having a finite number of periods...

  1. Integrated Photonic Orbital Angular Momentum Multiplexing and Demultiplexing on Chip

    Science.gov (United States)

    2014-10-31

    efficiency. At the same time, photon-efficiency beyond 10 bpp is projected by combining the demonstrated 65 number of OAM states per ring and multi-ring...bandwidth and a 9.6-b/s/Hz spectral efficiency. At the same time, photon-efficiency beyond 10 bpp is projected by combining the demonstrated 65 number of

  2. Integrated devices for quantum information and quantum simulation with polarization encoded qubits

    Science.gov (United States)

    Sansoni, Linda; Sciarrino, Fabio; Mataloni, Paolo; Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto

    2012-06-01

    The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. The technology for handling polarization-encoded qubits, the most commonly adopted approach, was still missing in quantum optical circuits until the ultrafast laser writing (ULW) technique was adopted for the first time to realize integrated devices able to support and manipulate polarization encoded qubits.1 Thanks to this method, polarization dependent and independent devices can be realized. In particular the maintenance of polarization entanglement was demonstrated in a balanced polarization independent integrated beam splitter1 and an integrated CNOT gate for polarization qubits was realized and carachterized.2 We also exploited integrated optics for quantum simulation tasks: by adopting the ULW technique an integrated quantum walk circuit was realized3 and, for the first time, we investigate how the particle statistics, either bosonic or fermionic, influences a two-particle discrete quantum walk. Such experiment has been realized by adopting two-photon entangled states and an array of integrated symmetric directional couplers. The polarization entanglement was exploited to simulate the bunching-antibunching feature of non interacting bosons and fermions. To this scope a novel three-dimensional geometry for the waveguide circuit is introduced, which allows accurate polarization independent behaviour, maintaining a remarkable control on both phase and balancement of the directional couplers.

  3. 40-Gb/s all-optical processing systems using hybrid photonic integration technology

    DEFF Research Database (Denmark)

    Kehayas, E.; Tsiokos, D.I.; Bakopoulos, P.

    2006-01-01

    the potential that all-optical technology can find application in future data-centric networks with efficient and dynamic bandwidth utilization. This paper also reports on the latest photonic integration breakthroughs as a potential migration path for reducing fabrication cost by developing photonic systems...

  4. Integration of single-photon sources and detectors on GaAs

    NARCIS (Netherlands)

    Digeronimo, G.E.; Petruzzella, Maurangelo; Birindelli, Simone; Gaudio, Rosalinda; Poor, Sartoon Fattah; van Otten, Frank W.M.; Fiore, Andrea

    2016-01-01

    Quantum photonic integrated circuits (QPICs) on a GaAs platform allow the generation, manipulation, routing, and detection of non-classical states of light, which could pave the way for quantum information processing based on photons. In this article, the prototype of a multi-functional QPIC is

  5. mm-Wave Wireless Communications based on Silicon Photonics Integrated Circuits

    DEFF Research Database (Denmark)

    Rommel, Simon; Heck, Martijn; Vegas Olmos, Juan José

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applica...

  6. Silicon Photonics Integrated Circuits for 5th Generation mm-Wave Wireless Communications

    DEFF Research Database (Denmark)

    Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applicability...

  7. An ultrahigh-accuracy Miniature Dew Point Sensor based on an Integrated Photonics Platform

    Science.gov (United States)

    Tao, Jifang; Luo, Yu; Wang, Li; Cai, Hong; Sun, Tao; Song, Junfeng; Liu, Hui; Gu, Yuandong

    2016-07-01

    The dew point is the temperature at which vapour begins to condense out of the gaseous phase. The deterministic relationship between the dew point and humidity is the basis for the industry-standard “chilled-mirror” dew point hygrometers used for highly accurate humidity measurements, which are essential for a broad range of industrial and metrological applications. However, these instruments have several limitations, such as high cost, large size and slow response. In this report, we demonstrate a compact, integrated photonic dew point sensor (DPS) that features high accuracy, a small footprint, and fast response. The fundamental component of this DPS is a partially exposed photonic micro-ring resonator, which serves two functions simultaneously: 1) sensing the condensed water droplets via evanescent fields and 2) functioning as a highly accurate, in situ temperature sensor based on the thermo-optic effect (TOE). This device virtually eliminates most of the temperature-related errors that affect conventional “chilled-mirror” hygrometers. Moreover, this DPS outperforms conventional “chilled-mirror” hygrometers with respect to size, cost and response time, paving the way for on-chip dew point detection and extension to applications for which the conventional technology is unsuitable because of size, cost, and other constraints.

  8. Development of an integrated pointing device driver for the disabled.

    Science.gov (United States)

    Shih, Ching-Hsiang; Shih, Ching-Tien

    2010-01-01

    To help people with disabilities such as those with spinal cord injury (SCI) to effectively utilise commercial pointing devices to operate computers. This study proposes a novel method to integrate the functions of commercial pointing devices. Utilising software technology to develop an integrated pointing device driver (IPDD) for a computer operating system. The proposed IPDD has the following benefits: (1) it does not require additional hardware cost or circuit preservations, (2) it supports all standard interfaces of commercial pointing devices, including PS/2, USB and wireless interfaces and (3) it can integrate any number of devices. The IPDD can be selected and combined according to their physical restriction. The IPDD is a novel method of integrating commercial pointing devices. Through IPDD, people with disabilities can choose a suitable combination of commercial pointing devices to achieve full cursor control and optimise operational performance. In contrast with previous studies, the software-based solution does not require additional hardware or circuit preservations, and it can support unlimited devices. In summary, the IPDD has the benefits of flexibility, low cost and high-device compatibility.

  9. Microfluidics and thin-film processes: a recipe for organic integrated photonics based on 3D microresonators

    Science.gov (United States)

    Huby, N.; Pluchon, D.; Belloul, M.; Moreac, A.; Coulon, N.; Gaviot, E.; Panizza, P.; B"che, B.

    2010-02-01

    We report on the design and realization of photonic integrated devices based on 3D organic microresonators. This has been achieved by combining microfluidics techniques and thin-film processes. The microfluidic device and the control of the flow rates of the continuous and dispersed phases allow the fabrication of organic microresonators with diameter ranging from 30 to 200 μm. The resonance of the sphere in air has been first investigated by using the Raman spectroscopy set-up demonstrating the appropriate photonic properties. Then the microresonators have been integrated on an organic chip made of the photosensitive resin SU-8 and positioned at the extremity of a taper and alongside a rib waveguide. The realization of these structures by thin-film processes needs one step UV-lithography leading to 6μm width and 30μm height. Both devices have proved the efficient evanescent coupling leading to the excitation of the whispering gallery modes confined at the surface of the organic 3D microresonators. Finally, a band-stop filter has been used to detect the resonance spectra of the resonators once integrated.

  10. Heterogeneous MEMS device assembly and integration

    Science.gov (United States)

    Topart, Patrice; Picard, Francis; Ilias, Samir; Alain, Christine; Chevalier, Claude; Fisette, Bruno; Paultre, Jacques E.; Généreux, Francis; Legros, Mathieu; Lepage, Jean-François; Laverdière, Christian; Ngo Phong, Linh; Caron, Jean-Sol; Desroches, Yan

    2014-03-01

    In recent years, smart phone applications have both raised the pressure for cost and time to market reduction, and the need for high performance MEMS devices. This trend has led the MEMS community to develop multi-die packaging of different functionalities or multi-technology (i.e. wafer) approaches to fabricate and assemble devices respectively. This paper reports on the fabrication, assembly and packaging at INO of various MEMS devices using heterogeneous assembly at chip and package-level. First, the performance of a giant (e.g. about 3 mm in diameter), electrostatically actuated beam steering mirror is presented. It can be rotated about two perpendicular axes to steer an optical beam within an angular cone of up to 60° in vector scan mode with an angular resolution of 1 mrad and a response time of 300 ms. To achieve such angular performance relative to mirror size, the microassembly was performed from sub-components fabricated from 4 different wafers. To combine infrared detection with inertial sensing, an electroplated proof mass was flip-chipped onto a 256×1 pixel uncooled bolometric FPA and released using laser ablation. In addition to the microassembly technology, performance results of packaged devices are presented. Finally, to simulate a 3072×3 pixel uncooled detector for cloud and fire imaging in mid and long-wave IR, the staggered assembly of six 512×3 pixel FPAs with a less than 50 micron pixel co-registration is reported.

  11. Photonic integrated Mach-Zehnder interferometer with an on-chip reference arm for optical coherence tomography

    Science.gov (United States)

    Yurtsever, Günay; Považay, Boris; Alex, Aneesh; Zabihian, Behrooz; Drexler, Wolfgang; Baets, Roel

    2014-01-01

    Optical coherence tomography (OCT) is a noninvasive, three-dimensional imaging modality with several medical and industrial applications. Integrated photonics has the potential to enable mass production of OCT devices to significantly reduce size and cost, which can increase its use in established fields as well as enable new applications. Using silicon nitride (Si3N4) and silicon dioxide (SiO2) waveguides, we fabricated an integrated interferometer for spectrometer-based OCT. The integrated photonic circuit consists of four splitters and a 190 mm long reference arm with a foot-print of only 10 × 33 mm2. It is used as the core of a spectral domain OCT system consisting of a superluminescent diode centered at 1320 nm with 100 nm bandwidth, a spectrometer with 1024 channels, and an x-y scanner. The sensitivity of the system was measured at 0.25 mm depth to be 65 dB with 0.1 mW on the sample. Using the system, we imaged human skin in vivo. With further optimization in design and fabrication technology, Si3N4/SiO2 waveguides have a potential to serve as a platform for passive photonic integrated circuits for OCT. PMID:24761288

  12. Tight control of light trapping in surface addressable photonic crystal membranes: application to spectrally and spatially selective optical devices (Conference Presentation)

    Science.gov (United States)

    Letartre, Xavier; Blanchard, Cédric; Grillet, Christian; Jamois, Cécile; Leclercq, Jean-Louis; Viktorovitch, Pierre

    2016-04-01

    Surface addressable Photonic Crystal Membranes (PCM) are 1D or 2D photonic crystals formed in a slab waveguides where Bloch modes located above the light line are exploited. These modes are responsible for resonances in the reflection spectrum whose bandwidth can be adjusted at will. These resonances result from the coupling between a guided mode of the membrane and a free-space mode through the pattern of the photonic crystal. If broadband, these structures represent an ideal mirror to form compact vertical microcavity with 3D confinement of photons and polarization selectivity. Among numerous devices, low threshold VCSELs with remarkable and tunable modal properties have been demonstrated. Narrow band PCMs (or high Q resonators) have also been extensively used for surface addressable optoelectronic devices where an active material is embedded into the membrane, leading to the demonstration of low threshold surface emitting lasers, nonlinear bistables, optical traps... In this presentation, we will describe the main physical rules which govern the lifetime of photons in these resonant modes. More specifically, it will be emphasized that the Q factor of the PCM is determined, to the first order, by the integral overlap between the electromagnetic field distributions of the guided and free space modes and of the dielectric periodic perturbation which is applied to the homogeneous membrane to get the photonic crystal. It turns out that the symmetries of these distributions are of prime importance for the strength of the resonance. It will be shown that, by molding in-plane or vertical symmetries of Bloch modes, spectrally and spatially selective light absorbers or emitters can be designed. First proof of concept devices will be also presented.

  13. Optimized optical devices for edge-coupling-enabled silicon photonics platform

    Science.gov (United States)

    Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

    2018-02-01

    We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

  14. Numerical modeling in photonic crystals integrated technology: the COPERNICUS Project

    DEFF Research Database (Denmark)

    Malaguti, Stefania; Armaroli, Andrea; Bellanca, Gaetano

    2011-01-01

    Photonic crystals will play a fundamental role in the future of optical communications. The relevance of the numerical modeling for the success of this technology is assessed by using some examples concerning the experience of the COPERNICUS Project.......Photonic crystals will play a fundamental role in the future of optical communications. The relevance of the numerical modeling for the success of this technology is assessed by using some examples concerning the experience of the COPERNICUS Project....

  15. Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

    KAUST Repository

    Viržonis, Darius; Kodzius, Rimantas; Vanagas, Galius

    2013-01-01

    The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here

  16. Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

    KAUST Repository

    Viržonis, Darius

    2013-10-22

    The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here by presentin

  17. Very Low NF, High DR Heterodyne RF Lightwave Links Using a Simple, Versatile Photonic Integration Technology

    National Research Council Canada - National Science Library

    Forrest, Stephen R

    2006-01-01

    ...: Demonstration of a versatile integration technology based on the asymmetric twin waveguide platform that allowed for the realization of a broad range of components useful in RF photonic components...

  18. Experimental and numerical study of electrical crosstalk in photonic integrated circuits

    NARCIS (Netherlands)

    Yao, W.; Gilardi, G.; Calabretta, N.; Smit, M.K.; Wale, M.J.

    2015-01-01

    This paper presents measurement results on electrical crosstalk between interconnect lines and electro-optical phaseshifters in photonic integrated circuits. The results indicate that overall crosstalk originates from radiative and substrate coupling between lines and from shared ground connections.

  19. Integrated microfluidic device for single-cell trapping and spectroscopy

    KAUST Repository

    Liberale, Carlo

    2013-02-13

    Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

  20. Evaluation of polymer based third order nonlinear integrated optics devices

    NARCIS (Netherlands)

    Driessen, A.; Hoekstra, Hugo; Blom, F.C.; Horst, F.; Horst, F.; Krijnen, Gijsbertus J.M.; van Schoot, J.B.P.; van Schoot, J.B.P.; Lambeck, Paul; Popma, T.J.A.; Diemeer, Mart

    Nonlinear polymers are promising materials for high speed active integrated optics devices. In this paper we evaluate the perspectives polymer based nonlinear optical devices can offer. Special attention is directed to the materials aspects. In our experimental work we applied mainly Akzo Nobel DANS

  1. Integration of semiconductor and ceramic superconductor devices for microwave applications

    NARCIS (Netherlands)

    Klopman, B.B.G.; Klopman, B.B.G.; Wijers, H.W.; Gao, J.; Gao, J.; Gerritsma, G.J.; Rogalla, Horst

    1991-01-01

    Due to the very-low-loss properties of ceramic superconductors, high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature facilitates integration with semiconductor devices. Examples are bandpass amplifiers,

  2. Integrated microfluidic device for single-cell trapping and spectroscopy

    KAUST Repository

    Liberale, Carlo; Cojoc, G.; Bragheri, F.; Minzioni, P.; Perozziello, G.; La Rocca, R.; Ferrara, L.; Rajamanickam, V.; Di Fabrizio, Enzo M.; Cristiani, I.

    2013-01-01

    Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

  3. Bio-Inspired Photon Absorption and Energy Transfer for Next Generation Photovoltaic Devices

    Science.gov (United States)

    Magsi, Komal

    Nature's solar energy harvesting system, photosynthesis, serves as a model for photon absorption, spectra broadening, and energy transfer. Photosynthesis harvests light far differently than photovoltaic cells. These differences offer both engineering opportunity and scientific challenges since not all of the natural photon absorption mechanisms have been understood. In return, solar cells can be a very sensitive probe for the absorption characteristics of molecules capable of transferring charge to a conductive interface. The objective of this scientific work is the advancement of next generation photovoltaics through the development and application of natural photo-energy transfer processes. Two scientific methods were used in the development and application of enhancing photon absorption and transfer. First, a detailed analysis of photovoltaic front surface fluorescent spectral modification and light scattering by hetero-structure was conducted. Phosphor based spectral down-conversion is a well-known laser technology. The theoretical calculations presented here indicate that parasitic losses and light scattering within the spectral range are large enough to offset any expected gains. The second approach for enhancing photon absorption is based on bio-inspired mechanisms. Key to the utilization of these natural processes is the development of a detailed scientific understanding and the application of these processes to cost effective systems and devices. In this work both aspects are investigated. Dye type solar cells were prepared and tested as a function of Chlorophyll (or Sodium-Copper Chlorophyllin) and accessory dyes. Forster has shown that the fluorescence ratio of Chlorophyll is modified and broadened by separate photon absorption (sensitized absorption) through interaction with nearby accessory pigments. This work used the dye type solar cell as a diagnostic tool by which to investigate photon absorption and photon energy transfer. These experiments shed

  4. Automatic Integration of IoT Devices

    OpenAIRE

    Pêgo, Pedro Ruben Januário

    2016-01-01

    During the last years a new concept has gained prominence in the technology world. With an increasingly dominant role in our days, Internet of Things (IoT) is a technological revolution that is changing our lives. The imagination is the limit for the new devices that may appear in the market. This phenomenon is derived from both, the technological evolution and the growing acceptance of this type of products in our social life. Faced with a fast growth, an increasing diversity ...

  5. Water Capture Device Signal Integration Board

    Science.gov (United States)

    Chamberlin, Kathryn J.; Hartnett, Andrew J.

    2018-01-01

    I am a junior in electrical engineering at Arizona State University, and this is my second internship at Johnson Space Center. I am an intern in the Command and Data Handling Branch of Avionics Division (EV2), my previous internship was also in EV2. During my previous internship I was assigned to the Water Capture Device payload, where I designed a prototype circuit board for the electronics system of the payload. For this internship, I have come back to the Water Capture Device project to further the work on the electronics design I completed previously. The Water Capture Device is an experimental payload to test the functionality of two different phase separators aboard the International Space Station (ISS). A phase separator sits downstream of a condensing heat exchanger (CHX) and separates the water from the air particles for environmental control on the ISS. With changing CHX technology, new phase separators are required. The goal of the project is to develop a test bed for the two phase separators to determine the best solution.

  6. Compact, Low-Power, and High-Speed Graphene-Based Integrated Photonic Modulator Technology

    Science.gov (United States)

    2017-11-02

    Compact, Low-Power, and High-Speed Graphene- Based Integrated Photonic Modulator Technology The views, opinions and/or findings contained in this...Graphene-Based Integrated Photonic Modulator Technology Report Term: 0-Other Email: sorger@gwu.edu Distribution Statement: 1-Approved for public release...which is an all-time record at Georgia Tech. Protocol Activity Status: Technology Transfer: Nothing to Report PARTICIPANTS: Person Months Worked

  7. Integrated bio-photonics to revolutionize health care enabled through PIX4life and PIXAPP

    Science.gov (United States)

    Jans, Hilde; O'Brien, Peter; Artundo, Iñigo; Porcel, Marco A. G.; Hoofman, Romano; Geuzebroek, Douwe; Dumon, Pieter; van der Vliet, Marcel; Witzens, Jeremy; Bourguignon, Eric; Van Dorpe, Pol; Lagae, Liesbet

    2018-02-01

    Photonics has become critical to life sciences. However, the field is far from benefiting fully from photonics' capabilities. Today, bulky and expensive optical systems dominate biomedical photonics, even though robust optical functionality can be realized cost-effectively on single photonic integrated circuits (PICs). Such chips are commercially available mostly for telecom applications, and at infrared wavelengths. Although proof-of-concept demonstrations for PICs in life sciences, using visible wavelengths are abundant, the gating factor for wider adoption is limited in resource capacity. Two European pilot lines, PIX4life and PIXAPP, were established to facilitate European R and D in biophotonics, by helping European companies and universities bridge the gap between research and industrial development. Through creation of an open-access model, PIX4life aims to lower barriers to entry for prototyping and validating biophotonics concepts for larger scale production. In addition, PIXAPP enables the assembly and packaging of photonic integrated circuits.

  8. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    DEFF Research Database (Denmark)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

    2017-01-01

    is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

  9. Continuous-variable measurement-device-independent quantum key distribution with virtual photon subtraction

    Science.gov (United States)

    Zhao, Yijia; Zhang, Yichen; Xu, Bingjie; Yu, Song; Guo, Hong

    2018-04-01

    The method of improving the performance of continuous-variable quantum key distribution protocols by postselection has been recently proposed and verified. In continuous-variable measurement-device-independent quantum key distribution (CV-MDI QKD) protocols, the measurement results are obtained from untrusted third party Charlie. There is still not an effective method of improving CV-MDI QKD by the postselection with untrusted measurement. We propose a method to improve the performance of coherent-state CV-MDI QKD protocol by virtual photon subtraction via non-Gaussian postselection. The non-Gaussian postselection of transmitted data is equivalent to an ideal photon subtraction on the two-mode squeezed vacuum state, which is favorable to enhance the performance of CV-MDI QKD. In CV-MDI QKD protocol with non-Gaussian postselection, two users select their own data independently. We demonstrate that the optimal performance of the renovated CV-MDI QKD protocol is obtained with the transmitted data only selected by Alice. By setting appropriate parameters of the virtual photon subtraction, the secret key rate and tolerable excess noise are both improved at long transmission distance. The method provides an effective optimization scheme for the application of CV-MDI QKD protocols.

  10. New design for photonic temporal integration with combined high processing speed and long operation time window.

    Science.gov (United States)

    Asghari, Mohammad H; Park, Yongwoo; Azaña, José

    2011-01-17

    We propose and experimentally prove a novel design for implementing photonic temporal integrators simultaneously offering a high processing bandwidth and a long operation time window, namely a large time-bandwidth product. The proposed scheme is based on concatenating in series a time-limited ultrafast photonic temporal integrator, e.g. implemented using a fiber Bragg grating (FBG), with a discrete-time (bandwidth limited) optical integrator, e.g. implemented using an optical resonant cavity. This design combines the advantages of these two previously demonstrated photonic integrator solutions, providing a processing speed as high as that of the time-limited ultrafast integrator and an operation time window fixed by the discrete-time integrator. Proof-of-concept experiments are reported using a uniform fiber Bragg grating (as the original time-limited integrator) connected in series with a bulk-optics coherent interferometers' system (as a passive 4-points discrete-time photonic temporal integrator). Using this setup, we demonstrate accurate temporal integration of complex-field optical signals with time-features as fast as ~6 ps, only limited by the processing bandwidth of the FBG integrator, over time durations as long as ~200 ps, which represents a 4-fold improvement over the operation time window (~50 ps) of the original FBG integrator.

  11. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    Science.gov (United States)

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

  12. Historical overview and future approach on integrated photonic circuit technologies; Shusekiko gijutsu no ayumi to korekara no tenkai

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, H. [Waseda University, Tokyo (Japan). School of Science and Engineering

    1997-08-01

    Integration of optical circuits is discussed. A number of devices used in optical communication even today treat light beams emitted by optical fibers or by semiconductor lasers as spatial beams. In making preparations for mass production in the future, the effect of mere miniaturization of optical systems on optical substrates is quite limited. Realizing the presence of such a limit is one of the motivations to endeavor to embody integrated photonic circuits. In this report, comments will be focused only on the technology of waveguide type integration. Integrated circuits on a compound semiconductor substrate are quite difficult to deal with, more difficult than generally supposed. This is a task with a bright future when reviewed from the viewpoint of the effective use of the quantum effect. If integration is to be effected on a Si substrate, possibilities are high that the effort will bear fruit now that the substrate can withstand the full application of micro-machining. An LiNbO3 wave path, however, wants a breakthrough in the switching technology. As for the material to coat substrates with, polymer based nonlinear optical materials are not satisfying. The integrated photonic circuit technology can be said to be on the stage where questions limitlessly surface also in the science of materials. 14 refs., 2 tabs.

  13. Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

    Science.gov (United States)

    Chiles, Jeff; Nader, Nima; Hickstein, Daniel D.; Yu, Su Peng; Briles, Travis Crain; Carlson, David; Jung, Hojoong; Shainline, Jeffrey M.; Diddams, Scott; Papp, Scott B.; Nam, Sae Woo; Mirin, Richard P.

    2018-04-01

    We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\\times 10^6 $ at 1552 nm, and $>1.2\\times 10^6$ throughout $\\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

  14. Dark and bright modes manipulation for plasmon-triggered photonic devices

    KAUST Repository

    Panaro, S.; Nazir, A.; Liberale, Carlo; Wang, H.; De Angelis, F.; Proietti Zaccaria, R.; Di Fabrizio, Enzo M.; Toma, A.

    2014-01-01

    In the last decade, several efforts have been spent in the study of near-field coupled systems, in order to induce hybridization of plasmonic modes. Within this context, particular attention has been recently paid on the possibility to couple conventional bright and dark modes. As a result of such phenomenon, a Fano resonance appears as a characteristic sharp dip in the scattering spectra. Here we show how, gradually coupling a single rod-like nanostructure to an aligned nanoantenna dimer, it is possible to induce the near-field activation of an anti-bonding dark mode. The high polarization sensitivity presented by the far-field response of T-shape trimer, combined with the sharp Fano resonance sustained by this plasmonic device, opens interesting perspectives towards a new era of photonic devices. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

  15. Dark and bright modes manipulation for plasmon-triggered photonic devices

    KAUST Repository

    Panaro, S.

    2014-09-10

    In the last decade, several efforts have been spent in the study of near-field coupled systems, in order to induce hybridization of plasmonic modes. Within this context, particular attention has been recently paid on the possibility to couple conventional bright and dark modes. As a result of such phenomenon, a Fano resonance appears as a characteristic sharp dip in the scattering spectra. Here we show how, gradually coupling a single rod-like nanostructure to an aligned nanoantenna dimer, it is possible to induce the near-field activation of an anti-bonding dark mode. The high polarization sensitivity presented by the far-field response of T-shape trimer, combined with the sharp Fano resonance sustained by this plasmonic device, opens interesting perspectives towards a new era of photonic devices. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

  16. InP-based photonic integrated circuit platform on SiC wafer.

    Science.gov (United States)

    Takenaka, Mitsuru; Takagi, Shinichi

    2017-11-27

    We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

  17. GaAs Photonic Integrated Circuit (PIC) development for high performance communications

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, C.T.

    1998-03-01

    Sandia has established a foundational technology in photonic integrated circuits (PICs) based on the (Al,Ga,In)As material system for optical communication, radar control and testing, and network switching applications at the important 1.3{mu}m/1.55{mu}m wavelengths. We investigated the optical, electrooptical, and microwave performance characteristics of the fundamental building-block PIC elements designed to be as simple and process-tolerant as possible, with particular emphasis placed on reducing optical insertion loss. Relatively conventional device array and circuit designs were built using these PIC elements: (1) to establish a baseline performance standard; (2) to assess the impact of epitaxial growth accuracy and uniformity, and of fabrication uniformity and yield; (3) to validate our theoretical and numerical models; and (4) to resolve the optical and microwave packaging issues associated with building fully packaged prototypes. Novel and more complex PIC designs and fabrication processes, viewed as higher payoff but higher risk, were explored in a parallel effort with the intention of meshing those advances into our baseline higher-yield capability as they mature. The application focus targeted the design and fabrication of packaged solitary modulators meeting the requirements of future wideband and high-speed analog and digital data links. Successfully prototyped devices are expected to feed into more complex PICs solving specific problems in high-performance communications, such as optical beamforming networks for phased array antennas.

  18. Highly integrated optical phased arrays: photonic integrated circuits for optical beam shaping and beam steering

    Science.gov (United States)

    Heck, Martijn J. R.

    2017-01-01

    Technologies for efficient generation and fast scanning of narrow free-space laser beams find major applications in three-dimensional (3D) imaging and mapping, like Lidar for remote sensing and navigation, and secure free-space optical communications. The ultimate goal for such a system is to reduce its size, weight, and power consumption, so that it can be mounted on, e.g. drones and autonomous cars. Moreover, beam scanning should ideally be done at video frame rates, something that is beyond the capabilities of current opto-mechanical systems. Photonic integrated circuit (PIC) technology holds the promise of achieving low-cost, compact, robust and energy-efficient complex optical systems. PICs integrate, for example, lasers, modulators, detectors, and filters on a single piece of semiconductor, typically silicon or indium phosphide, much like electronic integrated circuits. This technology is maturing fast, driven by high-bandwidth communications applications, and mature fabrication facilities. State-of-the-art commercial PICs integrate hundreds of elements, and the integration of thousands of elements has been shown in the laboratory. Over the last few years, there has been a considerable research effort to integrate beam steering systems on a PIC, and various beam steering demonstrators based on optical phased arrays have been realized. Arrays of up to thousands of coherent emitters, including their phase and amplitude control, have been integrated, and various applications have been explored. In this review paper, I will present an overview of the state of the art of this technology and its opportunities, illustrated by recent breakthroughs.

  19. Highly integrated optical phased arrays: photonic integrated circuits for optical beam shaping and beam steering

    Directory of Open Access Journals (Sweden)

    Heck Martijn J.R.

    2016-06-01

    Full Text Available Technologies for efficient generation and fast scanning of narrow free-space laser beams find major applications in three-dimensional (3D imaging and mapping, like Lidar for remote sensing and navigation, and secure free-space optical communications. The ultimate goal for such a system is to reduce its size, weight, and power consumption, so that it can be mounted on, e.g. drones and autonomous cars. Moreover, beam scanning should ideally be done at video frame rates, something that is beyond the capabilities of current opto-mechanical systems. Photonic integrated circuit (PIC technology holds the promise of achieving low-cost, compact, robust and energy-efficient complex optical systems. PICs integrate, for example, lasers, modulators, detectors, and filters on a single piece of semiconductor, typically silicon or indium phosphide, much like electronic integrated circuits. This technology is maturing fast, driven by high-bandwidth communications applications, and mature fabrication facilities. State-of-the-art commercial PICs integrate hundreds of elements, and the integration of thousands of elements has been shown in the laboratory. Over the last few years, there has been a considerable research effort to integrate beam steering systems on a PIC, and various beam steering demonstrators based on optical phased arrays have been realized. Arrays of up to thousands of coherent emitters, including their phase and amplitude control, have been integrated, and various applications have been explored. In this review paper, I will present an overview of the state of the art of this technology and its opportunities, illustrated by recent breakthroughs.

  20. Medical Device Integration Model Based on the Internet of Things

    Science.gov (United States)

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  1. Characterization of Sphinx1 ASIC X-ray detector using photon counting and charge integration

    Science.gov (United States)

    Habib, A.; Arques, M.; Moro, J.-L.; Accensi, M.; Stanchina, S.; Dupont, B.; Rohr, P.; Sicard, G.; Tchagaspanian, M.; Verger, L.

    2018-01-01

    Sphinx1 is a novel pixel architecture adapted for X-ray imaging, it detects radiation by photon counting and charge integration. In photon counting mode, each photon is compensated by one or more counter-charges typically consisting of 100 electrons (e-) each. The number of counter-charges required gives a measure of the incoming photon energy, thus allowing spectrometric detection. Pixels can also detect radiation by integrating the charges deposited by all incoming photons during one image frame and converting this analog value into a digital response with a 100 electrons least significant bit (LSB), based on the counter-charge concept. A proof of concept test chip measuring 5 mm × 5 mm, with 200 μm × 200 μm pixels has been produced and characterized. This paper provides details on the architecture and the counter-charge design; it also describes the two modes of operation: photon counting and charge integration. The first performance measurements for this test chip are presented. Noise was found to be ~80 e-rms in photon counting mode with a power consumption of only 0.9 μW/pixel for the static analog part and 0.3 μW/pixel for the static digital part.

  2. Integrated neuron circuit for implementing neuromorphic system with synaptic device

    Science.gov (United States)

    Lee, Jeong-Jun; Park, Jungjin; Kwon, Min-Woo; Hwang, Sungmin; Kim, Hyungjin; Park, Byung-Gook

    2018-02-01

    In this paper, we propose and fabricate Integrate & Fire neuron circuit for implementing neuromorphic system. Overall operation of the circuit is verified by measuring discrete devices and the output characteristics of the circuit. Since the neuron circuit shows asymmetric output characteristic that can drive synaptic device with Spike-Timing-Dependent-Plasticity (STDP) characteristic, the autonomous weight update process is also verified by connecting the synaptic device and the neuron circuit. The timing difference of the pre-neuron and the post-neuron induce autonomous weight change of the synaptic device. Unlike 2-terminal devices, which is frequently used to implement neuromorphic system, proposed scheme of the system enables autonomous weight update and simple configuration by using 4-terminal synapse device and appropriate neuron circuit. Weight update process in the multi-layer neuron-synapse connection ensures implementation of the hardware-based artificial intelligence, based on Spiking-Neural- Network (SNN).

  3. Photonic Integrated Circuits for mmW Systems

    DEFF Research Database (Denmark)

    Vegas Olmos, Juan José; Heck, M. J. R.; Tafur Monroy, Idelfonso

    2015-01-01

    WiFi frequency bands do not have enough capacity and wireless communication needs to move to the millimeter-wavelength or sub-terahertz range. The use of all-electronic solutions becomes increasingly prohibitive, though, at these higher frequencies. Microwave photonic technology o®ers the bandwidth...

  4. Monolithic photonic integrated circuit with a GaN-based bent waveguide

    Science.gov (United States)

    Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

    2018-06-01

    Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

  5. Integrated InP frequency discriminator for Phase-modulated microwave photonic links.

    Science.gov (United States)

    Fandiño, J S; Doménech, J D; Muñoz, P; Capmany, J

    2013-02-11

    We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the first to include the optical detectors. The discriminator, designed as a linear filter in intensity, features preliminary SFDR values the range between 67 and 79 dB.Hz(2/3) for signal frequencies in the range of 5-9 GHz limited, in principle, by the high value of the optical losses arising from the use of several free space coupling devices in our experimental setup. As discussed, these losses can be readily reduced by the use of integrated spot-size converters improving the SFDR by 17.3 dB (84-96 dB.Hz(2/3)). Further increase up to a range of (104-116 dB.Hz(2/3)) is possible by reducing the system noise eliminating the EDFA employed in the setup and using a commercially available laser source providing higher output power and lower relative intensity noise. Other paths for improvement requiring a filter redesign to be linear in the optical field are also discussed.

  6. Video integrated measurement system. [Diagnostic display devices

    Energy Technology Data Exchange (ETDEWEB)

    Spector, B.; Eilbert, L.; Finando, S.; Fukuda, F.

    1982-06-01

    A Video Integrated Measurement (VIM) System is described which incorporates the use of various noninvasive diagnostic procedures (moire contourography, electromyography, posturometry, infrared thermography, etc.), used individually or in combination, for the evaluation of neuromusculoskeletal and other disorders and their management with biofeedback and other therapeutic procedures. The system provides for measuring individual diagnostic and therapeutic modes, or multiple modes by split screen superimposition, of real time (actual) images of the patient and idealized (ideal-normal) models on a video monitor, along with analog and digital data, graphics, color, and other transduced symbolic information. It is concluded that this system provides an innovative and efficient method by which the therapist and patient can interact in biofeedback training/learning processes and holds considerable promise for more effective measurement and treatment of a wide variety of physical and behavioral disorders.

  7. Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

    KAUST Repository

    Shen, Chao

    2017-02-28

    A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

  8. Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

    KAUST Repository

    Shen, Chao; Lee, Changmin; Stegenburgs, Edgars; Lerma, Jorge Holguin; Ng, Tien Khee; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2017-01-01

    A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

  9. Photon harvesting, coloring and polarizing in photovoltaic cell integrated color filters: efficient energy routing strategies for power-saving displays.

    Science.gov (United States)

    Wen, Long; Chen, Qin; Song, Shichao; Yu, Yan; Jin, Lin; Hu, Xin

    2015-07-03

    We describe the integral electro-optical strategies that combine the functionalities of photovoltaic (PV) electricity generation and color filtering as well as polarizing to realize more efficient energy routing in display technology. Unlike the conventional pigment-based filters and polarizers, which absorb substantial amounts of unwanted spectral components and dissipate them in the form of heat, we propose converting the energy of those photons into electricity by constructing PV cell-integrated color filters based on a selectively transmitting aluminum (Al) rear electrode perforated with nanoholes (NHs). Combining with a dielectric-metal-dielectric (DMD) front electrode, the devices were optimized to enable efficient cavity-enhanced photon recycling in the PV functional layers. We perform a comprehensive theoretical and numerical analysis to explore the extraordinary optical transmission (EOT) through the Al NHs and identify basic design rules for achieving structural coloring or polarizing in our PV color filters. We show that the addition of thin photoactive polymer layers on the symmetrically configured Al NH electrode narrows the bandwidth of the EOT-assisted high-pass light filtering due to the strongly damped anti-symmetric coupling of the surface modes excited on the front and rear surface of the Al NHs, which facilitates the whole visible coloring with relatively high purity for the devices. By engineering the cut-off characteristics of the plasmonic waveguide mode supported by the circular or ellipsoidal Al NHs, beyond the photon recycling capacity, PV color filters and PV polarizing color filters that allow polarization-insensitive and strong polarization-anisotropic color filtering were demonstrated. The findings presented here may shed some light on expanding the utilization of PV electricity generation across new-generation energy-saving electrical display devices.

  10. Ultrafast-laser-inscribed 3D integrated photonics: challenges and emerging applications

    Directory of Open Access Journals (Sweden)

    Gross S.

    2015-11-01

    Full Text Available Since the discovery that tightly focused femtosecond laser pulses can induce a highly localised and permanent refractive index modification in a large number of transparent dielectrics, the technique of ultrafast laser inscription has received great attention from a wide range of applications. In particular, the capability to create three-dimensional optical waveguide circuits has opened up new opportunities for integrated photonics that would not have been possible with traditional planar fabrication techniques because it enables full access to the many degrees of freedom in a photon. This paper reviews the basic techniques and technological challenges of 3D integrated photonics fabricated using ultrafast laser inscription as well as reviews the most recent progress in the fields of astrophotonics, optical communication, quantum photonics, emulation of quantum systems, optofluidics and sensing.

  11. Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

    KAUST Repository

    Shen, Chao

    2017-11-30

    The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.

  12. Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

    KAUST Repository

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Ooi, Boon S.

    2017-01-01

    The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.

  13. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  14. Photonic integrated multiwavelength transmitters for fiber-to-the-home networks

    NARCIS (Netherlands)

    Lawniczuk, K.; Smit, M.K.; Piramidowicz, P.; Szczepanski, P.; Leijtens, X.J.M.; Wale, M.J.

    2012-01-01

    In this paper we present measurement results of monolithically integrated photonic transmitters for application in the next generation Fiber-to-the-Home (FTTH) networks. 4- and 8-channel transmitters were integrated onto a single chip, using multiple lasers with distributed Bragg reflector (DBR)

  15. The description of two-photon Rabi oscillations in the path integral approach

    Science.gov (United States)

    Biryukov, A. A.; Degtyareva, Ya. V.; Shleenkov, M. A.

    2018-04-01

    The probability of quantum transitions of a molecule between its states under the action of an electromagnetic field is represented as an integral over trajectories from a real alternating functional. A method is proposed for computing the integral using recurrence relations. The method is attached to describe the two-photon Rabi oscillations.

  16. Integrated circuit devices in control systems of coal mining complexes

    Energy Technology Data Exchange (ETDEWEB)

    1983-01-01

    Systems of automatic monitoring and control of coal mining complexes developed in the 1960's used electromagnetic relays, thyristors, and flip-flops on transistors of varying conductivity. The circuits' designers, devoted much attention to ensuring spark safety, lowering power consumption, and raising noise immunity and repairability of functional devices. The fast development of integrated circuitry led to the use of microelectronic components in most devices of mine automation. An analysis of specifications and experimental research into integrated circuits (IMS) shows that the series K 176 IMS components made by CMOS technology best meet mine conditions of operation. The use of IMS devices under mine conditions has demonstrated their high reliability. Further development of integrated circuitry involve using microprocessors and microcomputers. (SC)

  17. Framework for the Integration of Mobile Device Features in PLM

    OpenAIRE

    Hopf, Jens Michael

    2016-01-01

    Currently, companies have covered their business processes with stationary workstations while mobile business applications have limited relevance. Companies can cover their overall business processes more time-efficiently and cost-effectively when they integrate mobile users in workflows using mobile device features. The objective is a framework that can be used to model and control business applications for PLM processes using mobile device features to allow a totally new user experience.

  18. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    Science.gov (United States)

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  19. High-efficiency power transfer for silicon-based photonic devices

    Science.gov (United States)

    Son, Gyeongho; Yu, Kyoungsik

    2018-02-01

    We demonstrate an efficient coupling of guided light of 1550 nm from a standard single-mode optical fiber to a silicon waveguide using the finite-difference time-domain method and propose a fabrication method of tapered optical fibers for efficient power transfer to silicon-based photonic integrated circuits. Adiabatically-varying fiber core diameters with a small tapering angle can be obtained using the tube etching method with hydrofluoric acid and standard single-mode fibers covered by plastic jackets. The optical power transmission of the fundamental HE11 and TE-like modes between the fiber tapers and the inversely-tapered silicon waveguides was calculated with the finite-difference time-domain method to be more than 99% at a wavelength of 1550 nm. The proposed method for adiabatic fiber tapering can be applied in quantum optics, silicon-based photonic integrated circuits, and nanophotonics. Furthermore, efficient coupling within the telecommunication C-band is a promising approach for quantum networks in the future.

  20. Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices

    Directory of Open Access Journals (Sweden)

    Jhansirani KOTCHARLAKOTA

    2016-05-01

    Full Text Available Silicon has been the choice for photonics technology because of its cost, compatibility with mass production and availability. Silicon based photonic devices are very significant from commercial point of view and are much compatible with established technology. This paper deals with deposition and characterization of SiO2 films prepared by indigenously developed chemical vapor deposition system. Ellipsometry study of prepared films showed an increase in refractive index and film thickness with the increment in deposition temperature. The deposition temperature has a significant role for stoichiometric SiO2 films, FTIR measurement has shown the three characteristics peaks of Si-O-Si through three samples prepared at temperatures 700, 750 and 800 °C while Si-O-Si stretching peak positions were observed to be shifted to lower wavenumber in accordance to the temperature. FESEM analysis has confirmed the smooth surface without any crack or disorder while EDX analysis showed the corresponding peaks of compositional SiO2 films.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7245

  1. Integrated programmable photonic filter on the silicon -on- insulator platform

    DEFF Research Database (Denmark)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe

    2014-01-01

    We propose and demonstrate a silicon - on - insulator (SOI) on - chip programmable filter based on a four - tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heater s. We further demonstrate...... the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability...

  2. Integrated Sources of Polarization Entangled Photon Pair States via Spontaneous Four-Wave Mixing in AlGaAs Waveguides

    Science.gov (United States)

    Kultavewuti, Pisek

    Polarization-entangled photon pair states (PESs) are indispensable in several quantum protocols that should be implemented in an integrated photonic circuit for realizing a practical quantum technology. Preparing such states in integrated waveguides is in fact a challenge due to polarization mode dispersion. Unlike other conventional ways that are plagued with complications in fabrication or in state generation, in this thesis, the scheme based on parallel spontaneous four-wave mixing processes of two polarization waveguide modes is thoroughly studied in theory and experimentation for the polarization entanglement generation. The scheme in fact needs the modal dispersion, contradictory to the general perception, as revealed by a full quantum mechanical framework. The proper modal dispersion balances the effects of temporal walk-off and state factorizability. The study also shows that the popular standard platform such as a silicon-on-insulator wafer is far from suitable to implement the proposed simple generation technique. Proven by the quantum state tomography, the technique produces a highly-entangled state with a maximum concurrence of 0.97 +/- 0:01 from AlGaAs waveguides. In addition, the devices directly generated Bell states with an observed fidelity of 0.92 +/- 0:01 without any post-generation compensating steps. Novel suspended device structures, including their components, are then investigated numerically and experimentally characterized in pursuit of finding the geometry with the optimal dispersion property. The 700 nm x 1100 nm suspended rectangular waveguide is identified as the best geometry with a predicted maximum concurrence of 0.976 and a generation bandwidth of 3.3 THz. The suspended waveguide fabrication procedure adds about 15 dB/cm and 10 dB/cm of propagation loss to the TE and TM mode respectively, on top of the loss in corresponding full-cladding waveguides. Bridges, which structurally support the suspended waveguides, are optimized using

  3. Preliminary design and integration of EPICS operation interface for the Taiwan photon source

    International Nuclear Information System (INIS)

    Cheng, Y.S.; Jenny Chen; Chiu, P.C.; Kuo, C.H.; Liao, C.Y.; Hsu, K.T.; Wu, C.Y.

    2012-01-01

    The TPS (Taiwan Photon Source) is the latest generation 3 GeV synchrotron light source which has been in construction since 2010. The EPICS (Experimental Physics and Industrial Control System) framework is adopted as control system infrastructure for the TPS. The EPICS IOCs (Input Output Controller) and various database records have been gradually implemented to control and monitor available subsystems of the TPS at this moment. The subsystem includes timing, power supply, motion controller, miscellaneous Ethernet compliant devices etc. Through EPICS PVs (Process Variables) channel access, remote access I/O data via Ethernet interface can be observed by the usable graphical tool-kits, such as the EDM (Extensible Display Manager) and MATLAB. The operation interface mainly includes the function of setting, reading, save, restore and etc. Integration of operation interfaces will depend upon properties of each subsystem. In addition, the centralized management method is utilized to serve every client from file servers in order to maintain consistent versions of related EPICS files. (authors)

  4. The Marketing Plan: An Integrative Device for Teaching Marketing Management.

    Science.gov (United States)

    Berdine, W. R.; Petersen, James C.

    1980-01-01

    The importance of the marketing plan is stressed as an integrative device for teaching marketing management, and a structure is presented to assist students in designing a marketing plan. Components of this plan include marketing objectives, targeting market and buying motives, external environment and competition, product, price, and promotion.…

  5. Integrated Solar-Energy-Harvesting and -Storage Device

    Science.gov (United States)

    whitacre, Jay; Fleurial, Jean-Pierre; Mojarradi, Mohammed; Johnson, Travis; Ryan, Margaret Amy; Bugga, Ratnakumar; West, William; Surampudi, Subbarao; Blosiu, Julian

    2004-01-01

    A modular, integrated, completely solid-state system designed to harvest and store solar energy is under development. Called the power tile, the hybrid device consists of a photovoltaic cell, a battery, a thermoelectric device, and a charge-control circuit that are heterogeneously integrated to maximize specific energy capacity and efficiency. Power tiles could be used in a variety of space and terrestrial environments and would be designed to function with maximum efficiency in the presence of anticipated temperatures, temperature gradients, and cycles of sunlight and shadow. Because they are modular in nature, one could use a single power tile or could construct an array of as many tiles as needed. If multiple tiles are used in an array, the distributed and redundant nature of the charge control and distribution hardware provides an extremely fault-tolerant system. The figure presents a schematic view of the device.

  6. Upgraded photon calorimeter with integrating readout for the Hall A Compton polarimeter at Jefferson Lab

    International Nuclear Information System (INIS)

    Friend, M.; Parno, D.; Benmokhtar, F.; Camsonne, A.; Dalton, M.M.; Franklin, G.B.; Mamyan, V.; Michaels, R.; Nanda, S.; Nelyubin, V.; Paschke, K.; Quinn, B.; Rakhman, A.; Souder, P.; Tobias, A.

    2012-01-01

    The photon arm of the Compton polarimeter in Hall A of Jefferson Lab has been upgraded to allow for electron beam polarization measurements with better than 1% accuracy. The data acquisition (DAQ) system now includes an integrating mode, which eliminates several systematic uncertainties inherent in the original counting-DAQ setup. The photon calorimeter has been replaced with a Ce-doped Gd 2 SiO 5 crystal, which has a bright output and fast response, and works well for measurements using the new integrating method at electron beam energies from 1 to 6 GeV.

  7. A graphene integrated highly transparent resistive switching memory device

    Science.gov (United States)

    Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

    2018-05-01

    We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

  8. Hierarchically structured photonic crystals for integrated chemical separation and colorimetric detection.

    Science.gov (United States)

    Fu, Qianqian; Zhu, Biting; Ge, Jianping

    2017-02-16

    A SiO 2 colloidal photonic crystal film with a hierarchical porous structure is fabricated to demonstrate an integrated separation and colorimetric detection of chemical species for the first time. This new photonic crystal based thin layer chromatography process requires no dyeing, developing and UV irradiation compared to the traditional TLC. The assembling of mesoporous SiO 2 particles via a supersaturation-induced-precipitation process forms uniform and hierarchical photonic crystals with micron-scale cracks and mesopores, which accelerate the diffusion of developers and intensify the adsorption/desorption between the analytes and silica for efficient separation. Meanwhile, the chemical substances infiltrated to the voids of photonic crystals cause an increase of the refractive index and a large contrast of structural colors towards the unloaded part, so that the sample spots can be directly recognized with the naked eye before and after separation.

  9. The vacuum system for insertion devices at the Advanced Photon Source

    International Nuclear Information System (INIS)

    Trakhtenberg, E.; Gluskin, E.; Den Hartog, P.; Klippert, T.; Wiemerslage, G.; Xu, S.

    1995-01-01

    A vacuum system for the insertion devices at the Advanced Photon Source was designed, and chambers of this design were successfully manufactured and tested. Three different versions of the vacuum chamber have been developed with vertical apertures of 12 mm, 8mm, and 5 mm, respectively. The chambers are fabricated by extruding 6063 aluminum alloy to form a tube with the desired internal shaped and machining the exterior to finish dimensions. The wall thickness of the completed chamber at the beam orbit position is 1 mm. The design utilizes a rigid strongback that limits deflection of the chamber under vacuum despite the thin wall. Chambers with lengths of 2.2m and 5.2 m have been fabricated. Pumping is accomplished by a combination of lumped and distributed non-evaporable getters and ion pumps. An ultimate pressure of 5.1· -11 torr was achieved with the 12-mm vertical aperture prototype. Alignment of the vacuum chamber on its support can be made with a precision of ± 25 μm in the vertical plane, which allows minimum insertion device pole gaps of 14.5 mm, 10.5 mm, and 7.5 mm

  10. Epidermal photonic devices for quantitative imaging of temperature and thermal transport characteristics of the skin

    Science.gov (United States)

    Gao, Li; Zhang, Yihui; Malyarchuk, Viktor; Jia, Lin; Jang, Kyung-In; Chad Webb, R.; Fu, Haoran; Shi, Yan; Zhou, Guoyan; Shi, Luke; Shah, Deesha; Huang, Xian; Xu, Baoxing; Yu, Cunjiang; Huang, Yonggang; Rogers, John A.

    2014-09-01

    Characterization of temperature and thermal transport properties of the skin can yield important information of relevance to both clinical medicine and basic research in skin physiology. Here we introduce an ultrathin, compliant skin-like, or ‘epidermal’, photonic device that combines colorimetric temperature indicators with wireless stretchable electronics for thermal measurements when softly laminated on the skin surface. The sensors exploit thermochromic liquid crystals patterned into large-scale, pixelated arrays on thin elastomeric substrates; the electronics provide means for controlled, local heating by radio frequency signals. Algorithms for extracting patterns of colour recorded from these devices with a digital camera and computational tools for relating the results to underlying thermal processes near the skin surface lend quantitative value to the resulting data. Application examples include non-invasive spatial mapping of skin temperature with milli-Kelvin precision (±50 mK) and sub-millimetre spatial resolution. Demonstrations in reactive hyperaemia assessments of blood flow and hydration analysis establish relevance to cardiovascular health and skin care, respectively.

  11. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  12. Amplitude distributions of dark counts and photon counts in NbN superconducting single-photon detectors integrated with the HEMT readout

    Energy Technology Data Exchange (ETDEWEB)

    Kitaygorsky, J. [Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft (Netherlands); Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 (United States); Słysz, W., E-mail: wslysz@ite.waw.pl [Institute of Electron Technology, PL-02 668 Warsaw (Poland); Shouten, R.; Dorenbos, S.; Reiger, E.; Zwiller, V. [Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft (Netherlands); Sobolewski, Roman [Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 (United States)

    2017-01-15

    Highlights: • A new operation regime of NbN superconducting single-photon detectors (SSPDs). • A better understanding of the origin of dark counts generated by the detector. • A promise of PNR functionality in SSPD measurements. - Abstract: We present a new operation regime of NbN superconducting single-photon detectors (SSPDs) by integrating them with a low-noise cryogenic high-electron-mobility transistor and a high-load resistor. The integrated sensors are designed to get a better understanding of the origin of dark counts triggered by the detector, as our scheme allows us to distinguish the origin of dark pulses from the actual photon pulses in SSPDs. The presented approach is based on a statistical analysis of amplitude distributions of recorded trains of the SSPD photoresponse transients. It also enables to obtain information on energy of the incident photons, as well as demonstrates some photon-number-resolving capability of meander-type SSPDs.

  13. Self-assembly as a design tool for the integration of photonic structures into excitonic solar cells

    KAUST Repository

    Guldin, S.

    2011-09-20

    One way to successfully enhance light harvesting of excitonic solar cells is the integration of optical elements that increase the photon path length in the light absorbing layer. Device architectures which incorporate structural order in form of one- or three-dimensional refractive index lattices can lead to the localization of light in specific parts of the spectrum, while retaining the cell\\'s transparency in others. Herein, we present two routes for the integration of photonic crystals (PCs) into dye-sensitized solar cells (DSCs). In both cases, the self-assembly of soft matter plays a key role in the fabrication process of the TiO2 electrode. One approach relies on a combination of colloidal self-assembly and the self-assembly of block copolymers, resulting in a double layer dye-sensitized solar cell with increased light absorption from the 3D PC element. An alternative route is based on the fact that the refractive index of the mesoporous layer can be finely tuned by the interplay between block copolymer self-assembly and hydrolytic TiO2 sol-gel chemistry. Alternating deposition of high and low refractive index layers enables the integration of a 1D PC into a DSC.

  14. Chem/bio sensing with non-classical light and integrated photonics.

    Science.gov (United States)

    Haas, J; Schwartz, M; Rengstl, U; Jetter, M; Michler, P; Mizaikoff, B

    2018-01-29

    Modern quantum technology currently experiences extensive advances in applicability in communications, cryptography, computing, metrology and lithography. Harnessing this technology platform for chem/bio sensing scenarios is an appealing opportunity enabling ultra-sensitive detection schemes. This is further facilliated by the progress in fabrication, miniaturization and integration of visible and infrared quantum photonics. Especially, the combination of efficient single-photon sources together with waveguiding/sensing structures, serving as active optical transducer, as well as advanced detector materials is promising integrated quantum photonic chem/bio sensors. Besides the intrinsic molecular selectivity and non-destructive character of visible and infrared light based sensing schemes, chem/bio sensors taking advantage of non-classical light sources promise sensitivities beyond the standard quantum limit. In the present review, recent achievements towards on-chip chem/bio quantum photonic sensing platforms based on N00N states are discussed along with appropriate recognition chemistries, facilitating the detection of relevant (bio)analytes at ultra-trace concentration levels. After evaluating recent developments in this field, a perspective for a potentially promising sensor testbed is discussed for reaching integrated quantum sensing with two fiber-coupled GaAs chips together with semiconductor quantum dots serving as single-photon sources.

  15. A study of pile-up in integrated time-correlated single photon counting systems.

    Science.gov (United States)

    Arlt, Jochen; Tyndall, David; Rae, Bruce R; Li, David D-U; Richardson, Justin A; Henderson, Robert K

    2013-10-01

    Recent demonstration of highly integrated, solid-state, time-correlated single photon counting (TCSPC) systems in CMOS technology is set to provide significant increases in performance over existing bulky, expensive hardware. Arrays of single photon single photon avalanche diode (SPAD) detectors, timing channels, and signal processing can be integrated on a single silicon chip with a degree of parallelism and computational speed that is unattainable by discrete photomultiplier tube and photon counting card solutions. New multi-channel, multi-detector TCSPC sensor architectures with greatly enhanced throughput due to minimal detector transit (dead) time or timing channel dead time are now feasible. In this paper, we study the potential for future integrated, solid-state TCSPC sensors to exceed the photon pile-up limit through analytic formula and simulation. The results are validated using a 10% fill factor SPAD array and an 8-channel, 52 ps resolution time-to-digital conversion architecture with embedded lifetime estimation. It is demonstrated that pile-up insensitive acquisition is attainable at greater than 10 times the pulse repetition rate providing over 60 dB of extended dynamic range to the TCSPC technique. Our results predict future CMOS TCSPC sensors capable of live-cell transient observations in confocal scanning microscopy, improved resolution of near-infrared optical tomography systems, and fluorescence lifetime activated cell sorting.

  16. RFID and Memory Devices Fabricated Integrally on Substrates

    Science.gov (United States)

    Schramm, Harry F.

    2004-01-01

    Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for

  17. Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

    Science.gov (United States)

    Amiri, Iraj S.; Ariannejad, M. M.; Jalil, M. A.; Ali, J.; Yupapin, P.

    2018-06-01

    A three-dimensional (3-D) finite-difference-time-domain (FDTD) analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm), the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm) atomic layers of the graphene grate.

  18. Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

    Directory of Open Access Journals (Sweden)

    Iraj S. Amiri

    2018-06-01

    Full Text Available A three-dimensional (3-D finite-difference-time-domain (FDTD analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm, the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm atomic layers of the graphene grate. Keywords: Optical waveguide, Silicon waveguide, Grate, Graphene, Optical transmissivity

  19. On-chip non-reciprocal optical devices based on quantum inspired photonic lattices

    Science.gov (United States)

    El-Ganainy, R.; Eisfeld, A.; Levy, Miguel; Christodoulides, D. N.

    2013-10-01

    We propose integrated optical structures that can be used as isolators and polarization splitters based on engineered photonic lattices. Starting from optical waveguide arrays that mimic Fock space (quantum state with a well-defined particle number) representation of a non-interacting two-site Bose Hubbard Hamiltonian, we show that introducing magneto-optic nonreciprocity to these structures leads to a superior optical isolation performance. In the forward propagation direction, an input TM polarized beam experiences a perfect state transfer between the input and output waveguide channels while surface Bloch oscillations block the backward transmission between the same ports. Our analysis indicates a large isolation ratio of 75 dB after a propagation distance of 8 mm inside seven coupled waveguides. Moreover, we demonstrate that, a judicious choice of the nonreciprocity in this same geometry can lead to perfect polarization splitting.

  20. Integrated biocircuits: engineering functional multicellular circuits and devices

    Science.gov (United States)

    Prox, Jordan; Smith, Tory; Holl, Chad; Chehade, Nick; Guo, Liang

    2018-04-01

    Objective. Implantable neurotechnologies have revolutionized neuromodulatory medicine for treating the dysfunction of diseased neural circuitry. However, challenges with biocompatibility and lack of full control over neural network communication and function limits the potential to create more stable and robust neuromodulation devices. Thus, we propose a platform technology of implantable and programmable cellular systems, namely Integrated Biocircuits, which use only cells as the functional components of the device. Approach. We envision the foundational principles for this concept begins with novel in vitro platforms used for the study and reconstruction of cellular circuitry. Additionally, recent advancements in organoid and 3D culture systems account for microenvironment factors of cytoarchitecture to construct multicellular circuits as they are normally formed in the brain. We explore the current state of the art of these platforms to provide knowledge of their advancements in circuit fabrication and identify the current biological principles that could be applied in designing integrated biocircuit devices. Main results. We have highlighted the exemplary methodologies and techniques of in vitro circuit fabrication and propose the integration of selected controllable parameters, which would be required in creating suitable biodevices. Significance. We provide our perspective and propose new insights into the future of neuromodulaion devices within the scope of living cellular systems that can be applied in designing more reliable and biocompatible stimulation-based neuroprosthetics.

  1. Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum.

    Science.gov (United States)

    Lu, Tsung-Ju; Fanto, Michael; Choi, Hyeongrak; Thomas, Paul; Steidle, Jeffrey; Mouradian, Sara; Kong, Wei; Zhu, Di; Moon, Hyowon; Berggren, Karl; Kim, Jeehwan; Soltani, Mohammad; Preble, Stefan; Englund, Dirk

    2018-04-30

    We demonstrate a wide-bandgap semiconductor photonics platform based on nanocrystalline aluminum nitride (AlN) on sapphire. This photonics platform guides light at low loss from the ultraviolet (UV) to the visible spectrum. We measure ring resonators with intrinsic quality factor (Q) exceeding 170,000 at 638 nm and Q >20,000 down to 369.5 nm, which shows a promising path for low-loss integrated photonics in UV and visible spectrum. This platform opens up new possibilities in integrated quantum optics with trapped ions or atom-like color centers in solids, as well as classical applications including nonlinear optics and on-chip UV-spectroscopy.

  2. Highly localized distributed Brillouin scattering response in a photonic integrated circuit

    Science.gov (United States)

    Zarifi, Atiyeh; Stiller, Birgit; Merklein, Moritz; Li, Neuton; Vu, Khu; Choi, Duk-Yong; Ma, Pan; Madden, Stephen J.; Eggleton, Benjamin J.

    2018-03-01

    The interaction of optical and acoustic waves via stimulated Brillouin scattering (SBS) has recently reached on-chip platforms, which has opened new fields of applications ranging from integrated microwave photonics and on-chip narrow-linewidth lasers, to phonon-based optical delay and signal processing schemes. Since SBS is an effect that scales exponentially with interaction length, on-chip implementation on a short length scale is challenging, requiring carefully designed waveguides with optimized opto-acoustic overlap. In this work, we use the principle of Brillouin optical correlation domain analysis to locally measure the SBS spectrum with high spatial resolution of 800 μm and perform a distributed measurement of the Brillouin spectrum along a spiral waveguide in a photonic integrated circuit. This approach gives access to local opto-acoustic properties of the waveguides, including the Brillouin frequency shift and linewidth, essential information for the further development of high quality photonic-phononic waveguides for SBS applications.

  3. Chalcogenide Glass Lasers on Silicon Substrate Integrated Photonics

    Science.gov (United States)

    2016-07-08

    driven optoacoustic devices that permit stable GHz mode-locking of fiber ring lasers; bright deep and vacuum UV sources based on gas-filled hollow core ...topological insulators with ultracold atoms. Bio: Wolfgang Ketterle has been the John D. MacArthur professor of physics at MIT since 1998. He leads...remarkable enhancements (and in some cases reductions) in many kinds of light-matter interaction. Recent examples include the solid core PCFs widely

  4. Comparison of costs of integrating working level devices

    International Nuclear Information System (INIS)

    Langner, G.H. Jr.

    1977-01-01

    For the purpose of deciding upon the method for making routine field measurements of radon and radon daughter products there are primarily two factors to be taken into consideration: how well the various methods measure the parameter of interest and how much they cost. For the purpose of measuring the annual average working level within a structure there are available basically two devices: the integrating air sampler and track etch film. The cost and manpower requirements for each of these two devices are discussed

  5. Integration of semiconductor and ceramic superconductor devices for microwave applications

    International Nuclear Information System (INIS)

    Klopman, B.B.G.; Weijers, H.W.; Gao, J.; Gerritsma, G.J.; Rogalla, H.

    1991-01-01

    Due to the very low-loss properties of ceramic superconductors high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature, facilitates the integration with semiconductor devices. Examples are bandpass amplifiers, microwave-operated SQUIDs combined with GaAs preamplifiers, detectors, and MOSFET low-frequency amplifiers. This paper discusses the design of such circuits on a single one inch alumina substrate using surface mount techniques. Furthermore data on circuits that have been realized in our laboratory will be presented

  6. Integration Head Mounted Display Device and Hand Motion Gesture Device for Virtual Reality Laboratory

    Science.gov (United States)

    Rengganis, Y. A.; Safrodin, M.; Sukaridhoto, S.

    2018-01-01

    Virtual Reality Laboratory (VR Lab) is an innovation for conventional learning media which show us whole learning process in laboratory. There are many tools and materials are needed by user for doing practical in it, so user could feel new learning atmosphere by using this innovation. Nowadays, technologies more sophisticated than before. So it would carry in education and it will be more effective, efficient. The Supported technologies are needed us for making VR Lab such as head mounted display device and hand motion gesture device. The integration among them will be used us for making this research. Head mounted display device for viewing 3D environment of virtual reality laboratory. Hand motion gesture device for catching user real hand and it will be visualized in virtual reality laboratory. Virtual Reality will show us, if using the newest technologies in learning process it could make more interesting and easy to understand.

  7. The Integration of Bacteriorhodopsin Proteins with Semiconductor Heterostructure Devices

    Science.gov (United States)

    Xu, Jian

    2008-03-01

    Bioelectronics has emerged as one of the most rapidly developing fields among the active frontiers of interdisciplinary research. A major thrust in this field is aimed at the coupling of the technologically-unmatched performance of biological systems, such as neural and sensing functions, with the well developed technology of microelectronics and optoelectronics. To this end we have studied the integration of a suitably engineered protein, bacteriorhodopsin (BR), with semiconductor optoelectronic devices and circuits. Successful integration will potentially lead to ultrasensitive sensors with polarization selectivity and built-in preprocessing capabilities that will be useful for high speed tracking, motion and edge detection, biological detection, and artificial vision systems. In this presentation we will summarize our progresses in this area, which include fundamental studies on the transient dynamics of photo-induced charge shift in BR and the coupling mechanism at protein-semiconductor interface for effective immobilizing and selectively integrating light sensitive proteins with microelectronic devices and circuits, and the device engineering of BR-transistor-integrated optical sensors as well as their applications in phototransceiver circuits. Work done in collaboration with Pallab Bhattacharya, Jonghyun Shin, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI; Robert R. Birge, Department of Chemistry, University of Connecticut, Storrs, CT 06269; and György V'ar'o, Institute of Biophysics, Biological Research Center of the Hungarian Academy of Science, H-6701 Szeged, Hungary.

  8. Validation of photon-heating calculations in irradiation reactor with the experimental AMMON program and the CARMEN device

    International Nuclear Information System (INIS)

    Lemaire, Matthieu

    2015-01-01

    The temperature in the different core structures of Material-Testing Reactors (MTR) is a key physical parameter for MTRs' performance and safety. In nuclear reactors, where neutron and photon flux are sustained by fission chain reactions, neutrons and photons steadily deposit energy in the structures they cross and lead to a temperature rise in these structures. In non-fissile core structures (such as material samples, experimental devices, control rods, fuel claddings, and so on), the main part of nuclear heating is induced by photon interactions. This photon heating must therefore be well calculated as it is a key input parameter for MTR thermal studies, whose purpose is for instance to help determine the proper sizing of cooling power, electrical heaters and insulation gaps in MTR irradiation devices. The Jules Horowitz Reactor (JHR) is the next international MTR under construction in the south of France at CEA Cadarache research center (French Alternative Energies and Atomic Energy Commission). The JHR will be a major research infrastructure for the test of structural material and fuel behavior under irradiation. It will also produce from 25% to 50% of the European demand of medical radioisotopes for diagnostic purposes. High levels of nuclear heating are expected in the JHR core, with an absorbed-dose rate up to 20 watts per hafnium gram at nominal power (100 MW). Compared to a Pressurized-Water Reactor (PWR), the JHR is made of a specific array of materials (aluminum rack, beryllium reflector, hafnium control rods) and the feedback on photon-heating calculations with these features is limited. It is therefore necessary to validate photon-heating calculation tools (calculation codes and the European nuclear-data JEFF3.1.1 library) for use in the JHR, that is, it is necessary to determine the biases and uncertainties that are relevant for the photon-heating values calculated with these tools in the JHR. This topic constitutes the core of the present

  9. Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

    Science.gov (United States)

    Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

    2017-02-15

    An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

  10. Phased-array-based photonic integrated circuits for wavelength division multiplexing applications

    NARCIS (Netherlands)

    Staring, A.A.M.; Smit, M.K.

    1997-01-01

    Wavelength division multiplexing (WDM) technology provides many options to the design of flexible all-optical networks. In order to exploit these options to their full potential, photonic integrated circuits (PICs) for wavelength routing and switching will be indispensable. One of the basic building

  11. On-chip photonic integrated circuit structures for millimeter and terahertz wave signal generation

    NARCIS (Netherlands)

    Gordón, C.; Guzmán, R. C.; Corral, V.; Carpintero, G.; Leijtens, X.

    2015-01-01

    We present two different on-chip photonic integrated circuit (PIC) structures for continuous-wave generation of millimeter and terahertz waves, each one using a different approach. One approach is the optical heterodyne method, using an on-chip arrayed waveguide grating laser (OC-AWGL) which is

  12. Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

    International Nuclear Information System (INIS)

    Winden, A; Mikulics, M; Grützmacher, D; Hardtdegen, H

    2013-01-01

    Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range. (paper)

  13. An integrated single- and two-photon non-diffracting light-sheet microscope

    Science.gov (United States)

    Lau, Sze Cheung; Chiu, Hoi Chun; Zhao, Luwei; Zhao, Teng; Loy, M. M. T.; Du, Shengwang

    2018-04-01

    We describe a fluorescence optical microscope with both single-photon and two-photon non-diffracting light-sheet excitations for large volume imaging. With a special design to accommodate two different wavelength ranges (visible: 400-700 nm and near infrared: 800-1200 nm), we combine the line-Bessel sheet (LBS, for single-photon excitation) and the scanning Bessel beam (SBB, for two-photon excitation) light sheet together in a single microscope setup. For a transparent thin sample where the scattering can be ignored, the LBS single-photon excitation is the optimal imaging solution. When the light scattering becomes significant for a deep-cell or deep-tissue imaging, we use SBB light-sheet two-photon excitation with a longer wavelength. We achieved nearly identical lateral/axial resolution of about 350/270 nm for both imagings. This integrated light-sheet microscope may have a wide application for live-cell and live-tissue three-dimensional high-speed imaging.

  14. Revealing of photon-number splitting attack on quantum key distribution system by photon-number resolving devices

    International Nuclear Information System (INIS)

    Gaidash, A A; Egorov, V I; Gleim, A V

    2016-01-01

    Quantum cryptography allows distributing secure keys between two users so that any performed eavesdropping attempt would be immediately discovered. However, in practice an eavesdropper can obtain key information from multi-photon states when attenuated laser radiation is used as a source of quantum states. In order to prevent actions of an eavesdropper, it is generally suggested to implement special cryptographic protocols, like decoy states or SARG04. In this paper, we describe an alternative method based on monitoring photon number statistics after detection. We provide a useful rule of thumb to estimate approximate order of difference of expected distribution and distribution in case of attack. Formula for calculating a minimum value of total pulses or time-gaps to resolve attack is shown. Also formulas for actual fraction of raw key known to Eve were derived. This method can therefore be used with any system and even combining with mentioned special protocols. (paper)

  15. Progress in InP based photonic integration technology

    NARCIS (Netherlands)

    Smit, M.K.

    2015-01-01

    Indium Phosphide is a versatile semiconductor material that allows for integration of a broad range of components in a single chip. Basic building blocks include lasers, optical amplifiers, modulators, detectors and a variety of passive components, including wavelength demultiplexers, filters and

  16. Ultrahigh-speed hybrid laser for silicon photonic integrated chips

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Park, Gyeong Cheol; Ran, Qijiang

    2013-01-01

    Increasing power consumption for electrical interconnects between and inside chips is posing a real challenge to continue the performance scaling of processors/computers as predicted by D. Moore. In recent processors, energy consumption for electrical interconnects is half of power supplied...... and will be 80% in near future. This challenge strongly has motivated replacing electrical interconnects with optical ones even in chip level communications [1]. This chip-level optical interconnects need quite different performance of optoelectronic devices than required for conventional optical communications....... For a light source, the energy consumption per sending a bit is required to be

  17. A design approach for integrating thermoelectric devices using topology optimization

    DEFF Research Database (Denmark)

    Soprani, Stefano; Haertel, Jan Hendrik Klaas; Lazarov, Boyan Stefanov

    2016-01-01

    Efficient operation of thermoelectric devices strongly relies on the thermal integration into the energy conversion system in which they operate. Effective thermal integration reduces the temperature differences between the thermoelectric module and its thermal reservoirs, allowing the system...... to operate more efficiently. This work proposes and experimentally demonstrates a topology optimization approach as a design tool for efficient integration of thermoelectric modules into systems with specific design constraints. The approach allows thermal layout optimization of thermoelectric systems...... for different operating conditions and objective functions, such as temperature span, efficiency, and power recoveryrate. As a specific application, the integration of a thermoelectric cooler into the electronics section ofa downhole oil well intervention tool is investigated, with the objective of minimizing...

  18. A Sensor Middleware for integration of heterogeneous medical devices.

    Science.gov (United States)

    Brito, M; Vale, L; Carvalho, P; Henriques, J

    2010-01-01

    In this paper, the architecture of a modular, service-oriented, Sensor Middleware for data acquisition and processing is presented. The described solution was developed with the purpose of solving two increasingly relevant problems in the context of modern pHealth systems: i) to aggregate a number of heterogeneous, off-the-shelf, devices from which clinical measurements can be acquired and ii) to provide access and integration with an 802.15.4 network of wearable sensors. The modular nature of the Middleware provides the means to easily integrate pre-processing algorithms into processing pipelines, as well as new drivers for adding support for new sensor devices or communication technologies. Tests performed with both real and artificially generated data streams show that the presented solution is suitable for use both in a Windows PC or a Windows Mobile PDA with minimal overhead.

  19. A manufacturable process integration approach for graphene devices

    Science.gov (United States)

    Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

    2013-06-01

    In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

  20. Glass-embedded two-dimensional silicon photonic crystal devices with a broad bandwidth waveguide and a high quality nanocavity.

    Science.gov (United States)

    Jeon, Seung-Woo; Han, Jin-Kyu; Song, Bong-Shik; Noda, Susumu

    2010-08-30

    To enhance the mechanical stability of a two-dimensional photonic crystal slab structure and maintain its excellent performance, we designed a glass-embedded silicon photonic crystal device consisting of a broad bandwidth waveguide and a nanocavity with a high quality (Q) factor, and then fabricated the structure using spin-on glass (SOG). Furthermore, we showed that the refractive index of the SOG could be tuned from 1.37 to 1.57 by varying the curing temperature of the SOG. Finally, we demonstrated a glass-embedded heterostructured cavity with an ultrahigh Q factor of 160,000 by adjusting the refractive index of the SOG.

  1. Silicon integrated circuits advances in materials and device research

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

  2. The Structural Engineering Strategy for Photonic Material Research and Device Development

    Directory of Open Access Journals (Sweden)

    Yalin Lu

    2007-01-01

    Full Text Available A new structural engineering strategy is introduced for optimizing the fabrication of arrayed nanorod materials, optimizing superlattice structures for realizing a strong coupling, and directly developing nanophotonic devices. The strategy can be regarded as “combinatorial” because of the high efficiency in optimizing structures. In this article, this strategy was applied to grow ZnO nanorod arrays, and to develop a new multifunctional photodetector using such nanorod arrays, which is able to simultaneously detect power, energy, and polarization of an incident ultraviolet radiation. The strategy was also used to study the extraordinary dielectric behavior of relaxor ferroelectric lead titanate doped lead magnesium niobate heterophase superlattices in the terahertz frequencies, in order to investigate their dielectric polariton physics and the potential to be integrated with tunable surface resonant plasmonics devices.

  3. Design and Analysis of Enhanced Modulation Response in Integrated Coupled Cavities DBR Lasers Using Photon-Photon Resonance

    Directory of Open Access Journals (Sweden)

    Paolo Bardella

    2016-01-01

    Full Text Available In the last few decades, various solutions have been proposed to increase the modulation bandwidth and, consequently, the transmission bit-rate of semiconductor lasers. In this manuscript, we discuss a design procedure for a recently proposed laser cavity realized with the monolithic integration of two distributed Bragg reflector (DBR lasers allowing one to extend the modulation bandwidth. Such an extension is obtained introducing in the dynamic response a photon-photon resonance (PPR at a frequency higher than the modulation bandwidth of the corresponding single-section laser. Design guidelines will be proposed, and dynamic small and large signal simulations results, calculated using a finite difference traveling wave (FDTW numerical simulator, will be discussed to confirm the design results. The effectiveness of the design procedure is verified in a structure with PPR frequency at 35 GHz allowing one to obtain an open eye diagram for a non-return-to-zero (NRZ digital signal up to 80 GHz . Furthermore, the investigation of the rich dynamics of this structure shows that with proper bias conditions, it is possible to obtain also a tunable self-pulsating signal in a frequency range related to the PPR design.

  4. Methods for integrating a functional component into a microfluidic device

    Science.gov (United States)

    Simmons, Blake; Domeier, Linda; Woo, Noble; Shepodd, Timothy; Renzi, Ronald F.

    2014-08-19

    Injection molding is used to form microfluidic devices with integrated functional components. One or more functional components are placed in a mold cavity, which is then closed. Molten thermoplastic resin is injected into the mold and then cooled, thereby forming a solid substrate including the functional component(s). The solid substrate including the functional component(s) is then bonded to a second substrate, which may include microchannels or other features.

  5. Wearable Fall Detector using Integrated Sensors and Energy Devices

    Science.gov (United States)

    Jung, Sungmook; Hong, Seungki; Kim, Jaemin; Lee, Sangkyu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

    2015-11-01

    Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction with integrated sensors, controllers, and wireless units. A stretchable conductive nylon is used as electrodes of the triboelectric generator and the interconnection between battery cells. Ethoxylated polyethylenimine, coated on the surface of the conductive nylon electrode, tunes the work function of a triboelectric generator and maximizes its performance. The electrical energy harvested from the triboelectric generator through human body motions continuously recharges the stretchable battery and prolongs hours of its use. The integrated energy supply system runs the 3-axis accelerometer and related electronics that record human body motions and send the data wirelessly. Upon the unexpected fall occurring, a custom-made software discriminates the fall signal and an emergency alert is immediately sent to an external mobile device. This wearable fall detection system would provide new opportunities in the mobile electronics and wearable healthcare.

  6. Photonic Hilbert transformers based on laterally apodized integrated waveguide Bragg gratings on a SOI wafer.

    Science.gov (United States)

    Bazargani, Hamed Pishvai; Burla, Maurizio; Chrostowski, Lukas; Azaña, José

    2016-11-01

    We experimentally demonstrate high-performance integer and fractional-order photonic Hilbert transformers based on laterally apodized Bragg gratings in a silicon-on-insulator technology platform. The sub-millimeter-long gratings have been fabricated using single-etch electron beam lithography, and the resulting HT devices offer operation bandwidths approaching the THz range, with time-bandwidth products between 10 and 20.

  7. Free-space coherent optical communication with orbital angular, momentum multiplexing/demultiplexing using a hybrid 3D photonic integrated circuit.

    Science.gov (United States)

    Guan, Binbin; Scott, Ryan P; Qin, Chuan; Fontaine, Nicolas K; Su, Tiehui; Ferrari, Carlo; Cappuzzo, Mark; Klemens, Fred; Keller, Bob; Earnshaw, Mark; Yoo, S J B

    2014-01-13

    We demonstrate free-space space-division-multiplexing (SDM) with 15 orbital angular momentum (OAM) states using a three-dimensional (3D) photonic integrated circuit (PIC). The hybrid device consists of a silica planar lightwave circuit (PLC) coupled to a 3D waveguide circuit to multiplex/demultiplex OAM states. The low excess loss hybrid device is used in individual and two simultaneous OAM states multiplexing and demultiplexing link experiments with a 20 Gb/s, 1.67 b/s/Hz quadrature phase shift keyed (QPSK) signal, which shows error-free performance for 379,960 tested bits for all OAM states.

  8. All-fiber hybrid photon-plasmon circuits: integrating nanowire plasmonics with fiber optics.

    Science.gov (United States)

    Li, Xiyuan; Li, Wei; Guo, Xin; Lou, Jingyi; Tong, Limin

    2013-07-01

    We demonstrate all-fiber hybrid photon-plasmon circuits by integrating Ag nanowires with optical fibers. Relying on near-field coupling, we realize a photon-to-plasmon conversion efficiency up to 92% in a fiber-based nanowire plasmonic probe. Around optical communication band, we assemble an all-fiber resonator and a Mach-Zehnder interferometer (MZI) with Q-factor of 6 × 10(6) and extinction ratio up to 30 dB, respectively. Using the MZI, we demonstrate fiber-compatible plasmonic sensing with high sensitivity and low optical power.

  9. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  10. Review of window and filter requirements for commissioning of the Advanced Photon Source insertion device beamlines

    International Nuclear Information System (INIS)

    Kuzay, T.M.; Wang, Zhibi.

    1994-01-01

    The Advanced Photon Source (APS) is building 16 insertion device (ID) front ends for the first phase of the project. Eleven of these are to be equipped with the APS Undulator A and the other five with a Wiggler-A-type source. The Undulator A front ends are designed to operate in a ''windowless'' mode using an APS-designed differential pump. However, during beamline commissioning and early operations of the storage ring, it is prudent to install windows to ensure storage ring vacuum safety before easing into windowless operation. However, the window designed for this interim period may not meet all the needs of a user's scientific program. In the early phases of the project through commissioning and start of operations, such a window will permit the user to prepare for his program, while allowing both the user and the facility operators to gain experience for safe phasing into eventual windowless operations. In this report, we will present analysis and design options for a variety of windows particularly suited to either the APS Undulator A front ends or as user windows located in the first optics enclosure (FOE)

  11. Single-crystal charge transfer interfaces for efficient photonic devices (Conference Presentation)

    Science.gov (United States)

    Alves, Helena; Pinto, Rui M.; Maçôas, Ermelinda M. S.; Baleizão, Carlos; Santos, Isabel C.

    2016-09-01

    Organic semiconductors have unique optical, mechanical and electronic properties that can be combined with customized chemical functionality. In the crystalline form, determinant features for electronic applications such as molecular purity, the charge mobility or the exciton diffusion length, reveal a superior performance when compared with materials in a more disordered form. Combining crystals of two different conjugated materials as even enable a new 2D electronic system. However, the use of organic single crystals in devices is still limited to a few applications, such as field-effect transistors. In 2013, we presented the first system composed of single-crystal charge transfer interfaces presenting photoconductivity behaviour. The system composed of rubrene and TCNQ has a responsivity reaching 1 A/W, corresponding to an external quantum efficiency of nearly 100%. A similar approach, with a hybrid structure of a PCBM film and rubrene single crystal also presents high responsivity and the possibility to extract excitons generated in acceptor materials. This strategy led to an extended action towards the near IR. By adequate material design and structural organisation of perylediimides, we demonstrate that is possible to improve exciton diffusion efficiency. More recently, we have successfully used the concept of charge transfer interfaces in phototransistors. These results open the possibility of using organic single-crystal interfaces in photonic applications.

  12. Impact of Atomic Layer Deposition to NanoPhotonic Structures and Devices: A Review

    Directory of Open Access Journals (Sweden)

    Muhammad Rizwan eSaleem

    2014-10-01

    Full Text Available We review the significance of optical thin films by Atomic Layer Deposition (ALD method to fabricate nanophotonic devices and structures. ALD is a versatile technique to deposit functional coatings on reactive surfaces with conformal growth of compound materials, precise thickness control capable of angstrom resolution and coverage of high aspect ratio nanostructures using wide range of materials. ALD has explored great potential in the emerging fields of photonics, plasmonics, nano-biotechnology, and microelectronics. ALD technique uses sequential reactive chemical reactions to saturate a surface with a monolayer by pulsing of a first precursor (metal alkoxides or covalent halides, followed by reaction with second precursor molecules such as water to form the desired compound coatings. The targeted thickness of the desired compound material is controlled by the number of ALD cycles of precursor molecules that ensures the self limiting nature of reactions. The conformal growth and filling of TiO2 and Al2O3 optical material on nanostructures and their resulting optical properties have been described. The low temperature ALD-growth on various replicated sub-wavelength polymeric gratings is discussed.

  13. Optically reconfigurable metasurfaces and photonic devices based on phase change materials

    Science.gov (United States)

    Wang, Qian; Rogers, Edward T. F.; Gholipour, Behrad; Wang, Chih-Ming; Yuan, Guanghui; Teng, Jinghua; Zheludev, Nikolay I.

    2016-01-01

    Photonic components with adjustable parameters, such as variable-focal-length lenses or spectral filters, which can change functionality upon optical stimulation, could offer numerous useful applications. Tuning of such components is conventionally achieved by either micro- or nanomechanical actuation of their constituent parts, by stretching or by heating. Here, we report a novel approach for making reconfigurable optical components that are created with light in a non-volatile and reversible fashion. Such components are written, erased and rewritten as two-dimensional binary or greyscale patterns into a nanoscale film of phase-change material by inducing a refractive-index-changing phase transition with tailored trains of femtosecond pulses. We combine germanium-antimony-tellurium-based films with a diffraction-limited resolution optical writing process to demonstrate a variety of devices: visible-range reconfigurable bichromatic and multi-focus Fresnel zone plates, a super-oscillatory lens with subwavelength focus, a greyscale hologram, and a dielectric metamaterial with on-demand reflection and transmission resonances.

  14. A design approach for integrating thermoelectric devices using topology optimization

    International Nuclear Information System (INIS)

    Soprani, S.; Haertel, J.H.K.; Lazarov, B.S.; Sigmund, O.; Engelbrecht, K.

    2016-01-01

    Highlights: • The integration of a thermoelectric (TE) cooler into a robotic tool is optimized. • Topology optimization is suggested as design tool for TE integrated systems. • A 3D optimization technique using temperature dependent TE properties is presented. • The sensitivity of the optimization process to the boundary conditions is studied. • A working prototype is constructed and compared to the model results. - Abstract: Efficient operation of thermoelectric devices strongly relies on the thermal integration into the energy conversion system in which they operate. Effective thermal integration reduces the temperature differences between the thermoelectric module and its thermal reservoirs, allowing the system to operate more efficiently. This work proposes and experimentally demonstrates a topology optimization approach as a design tool for efficient integration of thermoelectric modules into systems with specific design constraints. The approach allows thermal layout optimization of thermoelectric systems for different operating conditions and objective functions, such as temperature span, efficiency, and power recovery rate. As a specific application, the integration of a thermoelectric cooler into the electronics section of a downhole oil well intervention tool is investigated, with the objective of minimizing the temperature of the cooled electronics. Several challenges are addressed: ensuring effective heat transfer from the load, minimizing the thermal resistances within the integrated system, maximizing the thermal protection of the cooled zone, and enhancing the conduction of the rejected heat to the oil well. The design method incorporates temperature dependent properties of the thermoelectric device and other materials. The 3D topology optimization model developed in this work was used to design a thermoelectric system, complete with insulation and heat sink, that was produced and tested. Good agreement between experimental results and

  15. Integration of active devices on smart polymers for neural interfaces

    Science.gov (United States)

    Avendano-Bolivar, Adrian Emmanuel

    The increasing ability to ever more precisely identify and measure neural interactions and other phenomena in the central and peripheral nervous systems is revolutionizing our understanding of the human body and brain. To facilitate further understanding, more sophisticated neural devices, perhaps using microelectronics processing, must be fabricated. Materials often used in these neural interfaces, while compatible with these fabrication processes, are not optimized for long-term use in the body and are often orders of magnitude stiffer than the tissue with which they interact. Using the smart polymer substrates described in this work, suitability for processing as well as chronic implantation is demonstrated. We explore how to integrate reliable circuitry onto these flexible, biocompatible substrates that can withstand the aggressive environment of the body. To increase the capabilities of these devices beyond individual channel sensing and stimulation, active electronics must also be included onto our systems. In order to add this functionality to these substrates and explore the limits of these devices, we developed a process to fabricate single organic thin film transistors with mobilities up to 0.4 cm2/Vs and threshold voltages close to 0V. A process for fabricating organic light emitting diodes on flexible substrates is also addressed. We have set a foundation and demonstrated initial feasibility for integrating multiple transistors onto thin-film flexible devices to create new applications, such as matrix addressable functionalized electrodes and organic light emitting diodes. A brief description on how to integrate waveguides for their use in optogenetics is addressed. We have built understanding about device constraints on mechanical, electrical and in vivo reliability and how various conditions affect the electronics' lifetime. We use a bi-layer gate dielectric using an inorganic material such as HfO 2 combined with organic Parylene-c. A study of

  16. Preliminary Results from Integrating Compton Photon Polarimetry in Hall A of Jefferson Lab

    International Nuclear Information System (INIS)

    Parno, D; Friend, M; Benmokhtar, F; Franklin, G; Quinn, B; Michaels, R; Nanda, S; Souder, P

    2011-01-01

    A wide range of nucleon and nuclear structure experiments in Jefferson Lab's Hall A require precise, continuous measurements of the polarization of the electron beam. In our Compton polarimeter, electrons are scattered off photons in a Fabry-Perot cavity; by measuring an asymmetry in the integrated signal of the scattered photons detected in a GSO crystal, we can make non-invasive, continuous measurements of the beam polarization. Our goal is to achieve 1% statistical error within two hours of running. We discuss the design and commissioning of an upgrade to this apparatus, and report preliminary results for experiments conducted at beam energies from 3.5 to 5.9 GeV and photon rates from 5 to 100 kHz.

  17. Al transmon qubits on silicon-on-insulator for quantum device integration

    Science.gov (United States)

    Keller, Andrew J.; Dieterle, Paul B.; Fang, Michael; Berger, Brett; Fink, Johannes M.; Painter, Oskar

    2017-07-01

    We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T2* = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.

  18. Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications.

    Science.gov (United States)

    Chen, Hong; Fu, Houqiang; Huang, Xuanqi; Zhang, Xiaodong; Yang, Tsung-Han; Montes, Jossue A; Baranowski, Izak; Zhao, Yuji

    2017-12-11

    We perform comprehensive studies on the fundamental loss mechanisms in III-nitride waveguides in the visible spectral region. Theoretical analysis shows that free carrier loss dominates for GaN under low photon power injection. When optical power increases, the two photon absorption loss becomes important and eventually dominates when photon energy above half-bandgap of GaN. When the dimensions of the waveguides reduce, the sidewall scattering loss will start to dominate. To verify the theoretical results, a high performance GaN-on-sapphire waveguide was fabricated and characterized. Experimental results are consistent with the theoretical findings, showing that under high power injection the optical loss changed significantly for GaN waveguides. A low optical loss ~2 dB/cm was achieved on the GaN waveguide, which is the lowest value ever reported for the visible spectral range. The results and fabrication processes developed in this work pave the way for the development of III-nitride integrated photonics in the visible and potentially ultraviolet spectral range for nonlinear optics and quantum photonics applications.

  19. Analysis of ultra-high sensitivity configuration in chip-integrated photonic crystal microcavity bio-sensors

    Energy Technology Data Exchange (ETDEWEB)

    Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com; Hosseini, Amir; Xu, Xiaochuan [Omega Optics, Inc., Austin, Texas 78757 (United States); Zhu, Liang; Zou, Yi [Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758 (United States); Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Omega Optics, Inc., Austin, Texas 78757 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758 (United States)

    2014-05-12

    We analyze the contributions of quality factor, fill fraction, and group index of chip-integrated resonance microcavity devices, to the detection limit for bulk chemical sensing and the minimum detectable biomolecule concentration in biosensing. We analyze the contributions from analyte absorbance, as well as from temperature and spectral noise. Slow light in two-dimensional photonic crystals provide opportunities for significant reduction of the detection limit below 1 × 10{sup −7} RIU (refractive index unit) which can enable highly sensitive sensors in diverse application areas. We demonstrate experimentally detected concentration of 1 fM (67 fg/ml) for the binding between biotin and avidin, the lowest reported till date.

  20. Analysis of ultra-high sensitivity configuration in chip-integrated photonic crystal microcavity bio-sensors

    International Nuclear Information System (INIS)

    Chakravarty, Swapnajit; Hosseini, Amir; Xu, Xiaochuan; Zhu, Liang; Zou, Yi; Chen, Ray T.

    2014-01-01

    We analyze the contributions of quality factor, fill fraction, and group index of chip-integrated resonance microcavity devices, to the detection limit for bulk chemical sensing and the minimum detectable biomolecule concentration in biosensing. We analyze the contributions from analyte absorbance, as well as from temperature and spectral noise. Slow light in two-dimensional photonic crystals provide opportunities for significant reduction of the detection limit below 1 × 10 −7 RIU (refractive index unit) which can enable highly sensitive sensors in diverse application areas. We demonstrate experimentally detected concentration of 1 fM (67 fg/ml) for the binding between biotin and avidin, the lowest reported till date

  1. Theory of few photon dynamics in light emitting quantum dot devices

    Science.gov (United States)

    Carmele, Alexander; Richter, Marten; Sitek, Anna; Knorr, Andreas

    2009-10-01

    We present a modified cluster expansion to describe single-photon emitters in a semiconductor environment. We calculate microscopically to what extent semiconductor features in quantum dot-wetting layer systems alter the exciton and photon dynamics in comparison to the atom-like emission dynamics. We access these systems by the photon-probability-cluster-expansion: a reliable approach for few photon dynamics in many body electron systems. As a first application, we show that the amplitude of vacuum Rabi flops determines the number of electrons in the quantum dot.

  2. Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

    Directory of Open Access Journals (Sweden)

    Daoxin Dai

    2012-03-01

    Full Text Available Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator, which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (demultiplexers, and high-extinction-ratio polarizers.

  3. GaAs integrated circuits and heterojunction devices

    Science.gov (United States)

    Fowlis, Colin

    1986-06-01

    The state of the art of GaAs technology in the U.S. as it applies to digital and analog integrated circuits is examined. In a market projection, it is noted that whereas analog ICs now largely dominate the market, in 1994 they will amount to only 39 percent vs. 57 percent for digital ICs. The military segment of the market will remain the largest (42 percent in 1994 vs. 70 percent today). ICs using depletion-mode-only FETs can be constructed in various forms, the closest to production being BFL or buffered FET logic. Schottky diode FET logic - a lower power approach - can reach higher complexities and strong efforts are being made in this direction. Enhancement type devices appear essential to reach LSI and VLSI complexity, but process control is still very difficult; strong efforts are under way, both in the U.S. and in Japan. Heterojunction devices appear very promising, although structures are fairly complex, and special fabrication techniques, such as molecular beam epitaxy and MOCVD, are necessary. High-electron-mobility-transistor (HEMT) devices show significant performance advantages over MESFETs at low temperatures. Initial results of heterojunction bipolar transistor devices show promise for high speed A/D converter applications.

  4. Investigation and realization of an automatic device for the control and test of a photon tagging system

    International Nuclear Information System (INIS)

    Fallou, J.L.

    1987-12-01

    An intelligent control/test equipment for a monoenergetic photon production system was developed. The device enables simulations to be done outside experimental runs. Operation can be entirely automatic, or controlled by the experimenters. The device is modular and conforms to CAMAC standards. The architecture of the system is based around a local bus which comprises a central unit and its memory; a programmable pulse generator; a switching circuit to test and control the various paths; and a unit to communicate with the acquisition system [fr

  5. Thin-film luminescent concentrators for integrated devices: a cookbook.

    Science.gov (United States)

    Evenson, S A; Rawicz, A H

    1995-11-01

    A luminescent concentrator (LC) is a nonimaging optical device used for collecting light energy. As a result of its unique properties, a LC also offers the possibility of separating different portions of the spectrum and concentrating them at the same time. Hence, LC's can be applied to a whole range of problems requiring the collection, manipulation, and distribution or measurement of light. Further-more, as described in our previous research, thin-film LC elements can be deposited directly over sensor and processing electronics in the form of integrated LC devices. As an aid to further research, the materials and technology required to fabricate these thin-film LC elements through the use of an ultraviolet-curable photopolymer are documented in detail.

  6. Integrated Microfibre Device for Refractive Index and Temperature Sensing

    Directory of Open Access Journals (Sweden)

    Sulaiman W. Harun

    2012-08-01

    Full Text Available A microfibre device integrating a microfibre knot resonator in a Sagnac loop reflector is proposed for refractive index and temperature sensing. The reflective configuration of this optical structure offers the advantages of simple fabrication and ease of sensing. To achieve a balance between responsiveness and robustness, the entire microfibre structure is embedded in low index Teflon, except for the 0.5–2 mm diameter microfibre knot resonator sensing region. The proposed sensor has exhibited a linear spectral response with temperature and refractive index. A small change in free spectral range is observed when the microfibre device experiences a large refractive index change in the surrounding medium. The change is found to be in agreement with calculated results based on dispersion relationships.

  7. Highly functional tunnelling devices integrated in 3D

    DEFF Research Database (Denmark)

    Wernersson, Lars-Erik; Lind, Erik; Lindström, Peter

    2003-01-01

    a new type of tunnelling transistor, namely a resonant-tunnelling permeable base transistor. A simple model based on a piece-wise linear approximation is used in Cadence to describe the current-voltage characteristics of the transistor. This model is further introduced into a small signal equivalent...... simultaneously on both tunnelling structures and the obtained characteristics are the result of the interplay between the two tunnelling structures and the gate. An equivalent circuit model is developed and we show how this interaction influences the current-voltage characteristics. The gate may be used......We present a new technology for integrating tunnelling devices in three dimensions. These devices are fabricated by the combination of the growth of semiconductor heterostructures with the controlled introduction of metallic elements into an epitaxial layer by an overgrowth technique. First, we use...

  8. Improving Light Extraction of Organic Light-Emitting Devices by Attaching Nanostructures with Self-Assembled Photonic Crystal Patterns

    Directory of Open Access Journals (Sweden)

    Kai-Yu Peng

    2014-01-01

    Full Text Available A single-monolayered hexagonal self-assembled photonic crystal (PC pattern fabricated onto polyethylene terephthalate (PET films by using simple nanosphere lithography (NSL method has been demonstrated in this research work. The patterned nanostructures acted as a scattering medium to extract the trapped photons from substrate mode of optical-electronic device for improving the overall external quantum efficiency of the organic light-emitting diodes (OLEDs. With an optimum latex concentration, the distribution of self-assembled polystyrene (PS nanosphere patterns on PET films can be easily controlled by adjusting the rotation speed of spin-coater. After attaching the PS nanosphere array brightness enhancement film (BEF sheet as a photonic crystal pattern onto the device, the luminous intensity of OLEDs in the normal viewing direction is 161% higher than the one without any BEF attachment. The electroluminescent (EL spectrum of OLEDs with PS patterned BEF attachment also showed minor color offset and superior color stabilization characteristics, and thus it possessed the potential applications in all kinds of display technology and solid-state optical-electronic devices.

  9. Light trapping in thin film solar cells using photonic engineering device concepts

    Science.gov (United States)

    Mutitu, James Gichuhi

    In this era of uncertainty concerning future energy solutions, strong reservations have arisen over the continued use and pursuit of fossil fuels and other conventional sources of energy. Moreover, there is currently a strong and global push for the implementation of stringent measures, in order to reduce the amount of green house gases emitted by every nation. As a consequence, there has emerged a sudden and frantic rush for new renewable energy solutions. In this world of renewable energy technologies is where we find photovoltaic (PV) technology today. However, as is, there are still many issues that need to be addressed before solar energy technologies become economically viable and available to all people, in every part of the world. This renewed interest in the development of solar electricity, has led to the advancement of new avenues that address the issues of cost and efficiency associated with PV. To this end, one of the prominent approaches being explored is thin film solar cell (TFSC) technology, which offers prospects of lower material costs and enables larger units of manufacture than conventional wafer based technology. However, TFSC technologies suffer from one major problem; they have lower efficiencies than conventional wafer based solar cell technologies. This lesser efficiency is based on a number of reasons, one of which is that with less material, there is less volume for the absorption of incident photons. This shortcoming leads to the need for optical light trapping; which is concerned with admitting the maximum amount of light into the solar cell and keeping the light within the structure for as long as possible. In this thesis, I present the fundamental scientific ideas, practice and methodology behind the application of photonic engineering device concepts to increase the light trapping capacity of thin film solar cells. In the introductory chapters, I develop the basic ideas behind light trapping in a sequential manner, where the effects

  10. Integrated Optical Mach-Zehnder Interferometer Based on Organic-Inorganic Hybrids for Photonics-on-a-Chip Biosensing Applications.

    Science.gov (United States)

    Bastos, Ana R; Vicente, Carlos M S; Oliveira-Silva, Rui; Silva, Nuno J O; Tacão, Marta; Costa, João P da; Lima, Mário; André, Paulo S; Ferreira, Rute A S

    2018-03-12

    The development of portable low-cost integrated optics-based biosensors for photonics-on-a-chip devices for real-time diagnosis are of great interest, offering significant advantages over current analytical methods. We report the fabrication and characterization of an optical sensor based on a Mach-Zehnder interferometer to monitor the growing concentration of bacteria in a liquid medium. The device pattern was imprinted on transparent self-patternable organic-inorganic di-ureasil hybrid films by direct UV-laser, reducing the complexity and cost production compared with lithographic techniques or three-dimensional (3D) patterning using femtosecond lasers. The sensor performance was evaluated using, as an illustrative example, E. coli cell growth in an aqueous medium. The measured sensitivity (2 × 10 -4 RIU) and limit of detection (LOD = 2 × 10 -4 ) are among the best values known for low-refractive index contrast sensors. Furthermore, the di-ureasil hybrid used to produce this biosensor has additional advantages, such as mechanical flexibility, thermal stability, and low insertion losses due to fiber-device refractive index mismatch (~1.49). Therefore, the proposed sensor constitutes a direct, compact, fast, and cost-effective solution for monitoring the concentration of lived-cells.

  11. Common-signal-induced synchronization in photonic integrated circuits and its application to secure key distribution.

    Science.gov (United States)

    Sasaki, Takuma; Kakesu, Izumi; Mitsui, Yusuke; Rontani, Damien; Uchida, Atsushi; Sunada, Satoshi; Yoshimura, Kazuyuki; Inubushi, Masanobu

    2017-10-16

    We experimentally achieve common-signal-induced synchronization in two photonic integrated circuits with short external cavities driven by a constant-amplitude random-phase light. The degree of synchronization can be controlled by changing the optical feedback phase of the two photonic integrated circuits. The change in the optical feedback phase leads to a significant redistribution of the spectral energy of optical and RF spectra, which is a unique characteristic of PICs with the short external cavity. The matching of the RF and optical spectra is necessary to achieve synchronization between the two PICs, and stable synchronization can be obtained over an hour in the presence of optical feedback. We succeed in generating information-theoretic secure keys and achieving the final key generation rate of 184 kb/s using the PICs.

  12. Progress in neuromorphic photonics

    Science.gov (United States)

    Ferreira de Lima, Thomas; Shastri, Bhavin J.; Tait, Alexander N.; Nahmias, Mitchell A.; Prucnal, Paul R.

    2017-03-01

    As society's appetite for information continues to grow, so does our need to process this information with increasing speed and versatility. Many believe that the one-size-fits-all solution of digital electronics is becoming a limiting factor in certain areas such as data links, cognitive radio, and ultrafast control. Analog photonic devices have found relatively simple signal processing niches where electronics can no longer provide sufficient speed and reconfigurability. Recently, the landscape for commercially manufacturable photonic chips has been changing rapidly and now promises to achieve economies of scale previously enjoyed solely by microelectronics. By bridging the mathematical prowess of artificial neural networks to the underlying physics of optoelectronic devices, neuromorphic photonics could breach new domains of information processing demanding significant complexity, low cost, and unmatched speed. In this article, we review the progress in neuromorphic photonics, focusing on photonic integrated devices. The challenges and design rules for optoelectronic instantiation of artificial neurons are presented. The proposed photonic architecture revolves around the processing network node composed of two parts: a nonlinear element and a network interface. We then survey excitable lasers in the recent literature as candidates for the nonlinear node and microring-resonator weight banks as the network interface. Finally, we compare metrics between neuromorphic electronics and neuromorphic photonics and discuss potential applications.

  13. FISHprep: A Novel Integrated Device for Metaphase FISH Sample Preparation

    DEFF Research Database (Denmark)

    Shah, Pranjul Jaykumar; Vedarethinam, Indumathi; Kwasny, Dorota

    2011-01-01

    We present a novel integrated device for preparing metaphase chromosomes spread slides (FISHprep). The quality of cytogenetic analysis from patient samples greatly relies on the efficiency of sample pre-treatment and/or slide preparation. In cytogenetic slide preparation, cell cultures...... are routinely used to process samples (for culture, arrest and fixation of cells) and/or to expand limited amount of samples (in case of prenatal diagnostics). Arguably, this expansion and other sample pretreatments form the longest part of the entire diagnostic protocols spanning over 3–4 days. We present here...... with minimal handling for metaphase FISH slide preparation....

  14. Device for the integral measurement of ionizing radiations

    International Nuclear Information System (INIS)

    Micheron, Francois.

    1980-01-01

    This invention relates to devices for the integral determination of ionizing radiations, particularly to the construction of a portable dosemeter. Portable measuring instruments have been suggested in the past, particularly dosemeters in which the discharge of a capacitor under the action of ionizing radiations is measured. Since the charge of a capacitor is not stable owing to dielectric imperfections, these measuring instruments have to be recalibrated at frequent intervals. To overcome this drawback, the invention suggests using the discharge of an electret, electrically charged to a pre-set initial value, under the action of ionizing radiations, as the transducer means of a dosemeter used in conjunction with display or warning systems [fr

  15. 76 FR 58041 - Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof; Notice...

    Science.gov (United States)

    2011-09-19

    ... Integrated Circuit Devices and Components Thereof; Notice of Institution of Investigation; Institution of... integrated circuit devices and components thereof by reason of infringement of certain claims of U.S. Patent... after importation of certain digital televisions containing integrated circuit devices and components...

  16. Portable blood extraction device integrated with biomedical monitoring system

    Science.gov (United States)

    Khumpuang, S.; Horade, M.; Fujioka, K.; Sugiyama, S.

    2006-01-01

    Painless and portable blood extraction device has been immersed in the world of miniaturization on bio-medical research particularly in manufacturing point-of-care systems. The fabrication of a blood extraction device integrated with an electrolyte-monitoring system is reported in this paper. The device has advantages in precise controlled dosage of blood extracted including the slightly damaged blood vessels and nervous system. The in-house blood diagnostic will become simple for the patients. Main components of the portable system are; the blood extraction device and electrolyte-monitoring system. The monitoring system consists of ISFET (Ion Selective Field Effect Transistor) for measuring the concentration level of minerals in blood. In this work, we measured the level of 3 ions; Na+, K+ and Cl-. The mentioned ions are frequently required the measurement since their concentration levels in the blood can indicate whether the kidney, pancreas, liver or heart is being malfunction. The fabrication of the whole system and experimentation on each ISM (Ion Sensitive Membrane) will be provided. Taking the advantages of LIGA technology, the 100 hollow microneedles fabricated by Synchrotron Radiation deep X-ray lithography through PCT (Plane-pattern to Cross-section Transfer) technique have been consisted in 5x5 mm2 area. The microneedle is 300 μm in base-diameter, 500 μm-pitch, 800 μm-height and 50 μm hole-diameter. The total size of the blood extraction device is 2x2x2 cm 3. The package is made from a plastic socket including slots for inserting microneedle array and ISFET connecting to an electrical circuit for the monitoring. Through the dimensional design for simply handling and selection of disposable material, the patients can self-evaluate the critical level of the body minerals in anywhere and anytime.

  17. Medicine Delivery Device with Integrated Sterilization and Detection

    Science.gov (United States)

    Shearn, Michael J.; Greer, Harold F.; Manohara, Harish

    2013-01-01

    Sterile delivery devices can be created by integrating a medicine delivery instrument with surfaces that are coated with germicidal and anti-fouling material. This requires that a large-surface-area template be developed within a constrained volume to ensure good contact between the delivered medicine and the germicidal material. Both of these can be integrated using JPL-developed silicon nanotip or cryo-etch black silicon technologies with atomic layer deposition (ALD) coating of specific germicidal layers. The application of semiconductor processing techniques and technologies to the problems of fluid manipulation and delivery has enabled the integration of chemical, electrical, and mechanical manipulation of samples all within a single microfluidic device. This approach has been successfully applied at JPL to the automated processing, detection, and analysis of minute quantities (parts per trillion level) of biomaterials to develop instruments for in situ exploration or extraterrestrial bodies. The same nanofabrication techniques that are used to produce a microfluidics device are also capable of synthesizing extremely high-surface-area templates in precise locations, and coating those surfaces with conformal films to manipulate their surface properties. This methodology has been successfully applied at JPL to produce patterned and coated silicon nanotips (also known as black silicon) to manipulate the hydrophilicity of surfaces to direct the spreading of fluids in microdevices. JPL's ALD technique is an ideal method to produce the highly conformal coatings required for this type of application. Certain materials, such as TiO2, have germicidal and anti-fouling properties when they are illuminated with UV light. The proposed delivery device contacts medicine with this high-surface-area black silicon surface coated with a thin-film germicidal deposited conformally with ALD. The coating can also be illuminated with ultraviolet light for the purpose of sterilization

  18. Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

    Science.gov (United States)

    Jones, Adam M; DeRose, Christopher T; Lentine, Anthony L; Trotter, Douglas C; Starbuck, Andrew L; Norwood, Robert A

    2013-05-20

    We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

  19. See-Through Dye-Sensitized Solar Cells: Photonic Reflectors for Tandem and Building Integrated Photovoltaics

    KAUST Repository

    Heiniger, Leo-Philipp

    2013-08-21

    See-through dye-sensitized solar cells with 1D photonic crystal Bragg reflector photoanodes show an increase in peak external quantum efficiency of 47% while still maintaining high fill factors, resulting in an almost 40% increase in power conversion efficiency. These photoanodes are ideally suited for tandem and building integrated photovoltaics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Semiconductor Devices Inspired By and Integrated With Biology

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, John [University of Illinois

    2012-04-25

    Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt biologically inspired designs or require intimate integration with the human body. This talk describes the development of ideas for electronics that offer the performance of state-of-the-art, wafer- based systems but with the mechanical properties of a rubber band. We explain the underlying materials science and mechanics of these approaches, and illustrate their use in (1) bio- integrated, ‘tissue-like’ electronics with unique capabilities for mapping cardiac and neural electrophysiology, and (2) bio-inspired, ‘eyeball’ cameras with exceptional imaging properties enabled by curvilinear, Petzval designs.

  1. ITS - The integrated TIGER series of coupled electron/photon Monte Carlo transport codes

    International Nuclear Information System (INIS)

    Halbleib, J.A.; Mehlhorn, T.A.

    1985-01-01

    The TIGER series of time-independent coupled electron/photon Monte Carlo transport codes is a group of multimaterial, multidimensional codes designed to provide a state-of-the-art description of the production and transport of the electron/photon cascade. The codes follow both electrons and photons from 1.0 GeV down to 1.0 keV, and the user has the option of combining the collisional transport with transport in macroscopic electric and magnetic fields of arbitrary spatial dependence. Source particles can be either electrons or photons. The most important output data are (a) charge and energy deposition profiles, (b) integral and differential escape coefficients for both electrons and photons, (c) differential electron and photon flux, and (d) pulse-height distributions for selected regions of the problem geometry. The base codes of the series differ from one another primarily in their dimensionality and geometric modeling. They include (a) a one-dimensional multilayer code, (b) a code that describes the transport in two-dimensional axisymmetric cylindrical material geometries with a fully three-dimensional description of particle trajectories, and (c) a general three-dimensional transport code which employs a combinatorial geometry scheme. These base codes were designed primarily for describing radiation transport for those situations in which the detailed atomic structure of the transport medium is not important. For some applications, it is desirable to have a more detailed model of the low energy transport. The system includes three additional codes that contain a more elaborate ionization/relaxation model than the base codes. Finally, the system includes two codes that combine the collisional transport of the multidimensional base codes with transport in macroscopic electric and magnetic fields of arbitrary spatial dependence

  2. Programmable dispersion on a photonic integrated circuit for classical and quantum applications.

    Science.gov (United States)

    Notaros, Jelena; Mower, Jacob; Heuck, Mikkel; Lupo, Cosmo; Harris, Nicholas C; Steinbrecher, Gregory R; Bunandar, Darius; Baehr-Jones, Tom; Hochberg, Michael; Lloyd, Seth; Englund, Dirk

    2017-09-04

    We demonstrate a large-scale tunable-coupling ring resonator array, suitable for high-dimensional classical and quantum transforms, in a CMOS-compatible silicon photonics platform. The device consists of a waveguide coupled to 15 ring-based dispersive elements with programmable linewidths and resonance frequencies. The ability to control both quality factor and frequency of each ring provides an unprecedented 30 degrees of freedom in dispersion control on a single spatial channel. This programmable dispersion control system has a range of applications, including mode-locked lasers, quantum key distribution, and photon-pair generation. We also propose a novel application enabled by this circuit - high-speed quantum communications using temporal-mode-based quantum data locking - and discuss the utility of the system for performing the high-dimensional unitary optical transformations necessary for a quantum data locking demonstration.

  3. High-performance silicon photonics technology for telecommunications applications.

    Science.gov (United States)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

    2014-04-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

  4. High-performance silicon photonics technology for telecommunications applications

    International Nuclear Information System (INIS)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Yamamoto, Tsuyoshi; Ishikawa, Yasuhiko; Wada, Kazumi

    2014-01-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. (review)

  5. High-performance silicon photonics technology for telecommunications applications

    Science.gov (United States)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

    2014-04-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

  6. Lithography for enabling advances in integrated circuits and devices.

    Science.gov (United States)

    Garner, C Michael

    2012-08-28

    Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

  7. Mode division multiplexing over 19-cell hollow-core photonic bandgap fibre by employing integrated mode multiplexer

    NARCIS (Netherlands)

    Chen, H.; Uden, van R.G.H.; Okonkwo, C.M.; Jung, Y.; Wheeler, N.V.; Fokoua, E.N.; Baddela, N.; Petrovich, M.N.; Poletti, F.; Richardson, D.J.; Raz, O.; Waardt, de H.; Koonen, A.M.J.

    2014-01-01

    A photonic integrated mode coupler based on silicon-on-insulator is employed for mode division multiplexing (MDM) over a 193 m 19-cell hollow-core photonic bandgap fibre (HC-PBGF) with a -3 dB bandwidth >120 nm. Robust MDM transmissions using LP01 and LP11 modes, and two degenerate LP11 modes (LP11a

  8. Time-dependent photon heat transport through a mesoscopic Josephson device

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Wen-Ting; Zhao, Hong-Kang, E-mail: zhaohonk@bit.edu.cn

    2017-02-15

    The time-oscillating photon heat current through a dc voltage biased mesoscopic Josephson Junction (MJJ) has been investigated by employing the nonequilibrium Green’s function approach. The Landauer-like formula of photon heat current has been derived in both of the Fourier space and its time-oscillating versions, where Coulomb interaction, self inductance, and magnetic flux take effective roles. Nonlinear behaviors are exhibited in the photon heat current due to the quantum nature of MJJ and applied external dc voltage. The magnitude of heat current decreases with increasing the external bias voltage, and subtle oscillation structures appear as the superposition of different photon heat branches. The overall period of heat current with respect to time is not affected by Coulomb interaction, however, the magnitude and phase of it vary considerably by changing the Coulomb interaction. - Highlights: • The time-oscillating photon heat current through a mesoscopic Josephson Junction has been investigated. • The Landauer-like formula of photon heat current has been derived by the nonequilibrium Green’s function approach. • Nonlinear behaviors are exhibited in the photon heat current resulting from the self inductance and Coulomb interaction. • The oscillation structure of heat current is composed of the superposition of oscillations with different periods.

  9. Time-dependent photon heat transport through a mesoscopic Josephson device

    International Nuclear Information System (INIS)

    Lu, Wen-Ting; Zhao, Hong-Kang

    2017-01-01

    The time-oscillating photon heat current through a dc voltage biased mesoscopic Josephson Junction (MJJ) has been investigated by employing the nonequilibrium Green’s function approach. The Landauer-like formula of photon heat current has been derived in both of the Fourier space and its time-oscillating versions, where Coulomb interaction, self inductance, and magnetic flux take effective roles. Nonlinear behaviors are exhibited in the photon heat current due to the quantum nature of MJJ and applied external dc voltage. The magnitude of heat current decreases with increasing the external bias voltage, and subtle oscillation structures appear as the superposition of different photon heat branches. The overall period of heat current with respect to time is not affected by Coulomb interaction, however, the magnitude and phase of it vary considerably by changing the Coulomb interaction. - Highlights: • The time-oscillating photon heat current through a mesoscopic Josephson Junction has been investigated. • The Landauer-like formula of photon heat current has been derived by the nonequilibrium Green’s function approach. • Nonlinear behaviors are exhibited in the photon heat current resulting from the self inductance and Coulomb interaction. • The oscillation structure of heat current is composed of the superposition of oscillations with different periods.

  10. SU-E-T-781: Using An Electronic Portal Imaging Device (EPID) for Correlating Linac Photon Beam Energies

    Energy Technology Data Exchange (ETDEWEB)

    Yaddanapudi, S; Cai, B; Sun, B; Noel, C; Goddu, S; Mutic, S [Washington University School of Medicine, Saint Louis, MO (United States)

    2015-06-15

    Purpose: Electronic portal imaging devices (EPIDs) have proven to be useful for measuring several parameters of interest in linear accelerator (linac) quality assurance (QA). The purpose of this project was to evaluate the feasibility of using EPIDs for determining linac photon beam energies. Methods: Two non-clinical Varian TrueBeam linacs (Varian Medical Systems, Palo Alto, CA) with 6MV and 10MV photon beams were used to perform the measurements. The linacs were equipped with an amorphous silicon based EPIDs (aSi1000) that were used for the measurements. We compared the use of flatness versus percent depth dose (PDD) for predicting changes in linac photon beam energy. PDD was measured in 1D water tank (Sun Nuclear Corporation, Melbourne FL) and the profiles were measured using 2D ion-chamber array (IC-Profiler, Sun Nuclear) and the EPID. Energy changes were accomplished by varying the bending magnet current (BMC). The evaluated energies conformed with the AAPM TG142 tolerance of ±1% change in PDD. Results: BMC changes correlating with a ±1% change in PDD corresponded with a change in flatness of ∼1% to 2% from baseline values on the EPID. IC Profiler flatness values had the same correlation. We observed a similar trend for the 10MV beam energy changes. Our measurements indicated a strong correlation between changes in linac photon beam energy and changes in flatness. For all machines and energies, beam energy changes produced change in the uniformity (AAPM TG-142), varying from ∼1% to 2.5%. Conclusions: EPID image analysis of beam profiles can be used to determine linac photon beam energy changes. Flatness-based metrics or uniformity as defined by AAPM TG-142 were found to be more sensitive to linac photon beam energy changes than PDD. Research funding provided by Varian Medical Systems. Dr. Sasa Mutic receives compensation for providing patient safety training services from Varian Medical Systems, the sponsor of this study.

  11. Fresnel Lenses fabricated by femtosecond laser micromachining on Polymer 1D Photonic Crystal

    Directory of Open Access Journals (Sweden)

    Guduru Surya S.K.

    2013-11-01

    Full Text Available We report the fabrication of micro Fresnel lenses by femtosecond laser surface ablation on polymer 1D photonic crystals. This device is designed to focus the transmitted wavelength of the photonic crystal and filter the wavelengths corresponding to the photonic band gap region. Integration of such devices in a wavelength selective light harvesting and filtering microchip can be achieved.

  12. Extended device profiles and testing procedures for the approval process of integrated medical devices using the IEEE 11073 communication standard.

    Science.gov (United States)

    Janß, Armin; Thorn, Johannes; Schmitz, Malte; Mildner, Alexander; Dell'Anna-Pudlik, Jasmin; Leucker, Martin; Radermacher, Klaus

    2018-02-23

    Nowadays, only closed and proprietary integrated operating room systems (IORS) from big manufacturers are available on the market. Hence, the interconnection of components from third-party vendors is only possible with increased time and costs. In the context of the German Federal Ministry of Education and Research (BMBF)-funded project OR.NET (2012-2016), the open integration of medical devices from different manufacturers was addressed. An integrated operating theater based on the open communication standard IEEE 11073 shall give clinical operators the opportunity to choose medical devices independently of the manufacturer. This approach would be advantageous especially for hospital operators and small- and medium-sized enterprises (SME) of medical devices. Actual standards and concepts regarding technical feasibility and the approval process do not cope with the requirements for a modular integration of medical devices in the operating room (OR), based on an open communication standard. Therefore, innovative approval strategies and corresponding certification and test procedures, which cover actual legal and normative standards, have to be developed in order to support the future risk management and the usability engineering process of open integrated medical devices in the OR. The use of standardized device and service profiles and a three-step testing procedure, including conformity, interoperability and integration tests are described in this paper and shall support the manufacturers to integrate their medical devices without disclosing the medical devices' risk analysis and related confidential expertise or proprietary information.

  13. Indoor Navigation Design Integrated with Smart Phones and Rfid Devices

    Science.gov (United States)

    Ortakci, Y.; Demiral, E.; Atila, U.; Karas, I. R.

    2015-10-01

    High rise, complex and huge buildings in the cities are almost like a small city with their tens of floors, hundreds of corridors and rooms and passages. Due to size and complexity of these buildings, people need guidance to find their way to the destination in these buildings. In this study, a mobile application is developed to visualize pedestrian's indoor position as 3D in their smartphone and RFID Technology is used to detect the position of pedestrian. While the pedestrian is walking on his/her way on the route, smartphone will guide the pedestrian by displaying the photos of indoor environment on the route. Along the tour, an RFID (Radio-Frequency Identification) device is integrated to the system. The pedestrian will carry the RFID device during his/her tour in the building. The RFID device will send the position data to the server directly in every two seconds periodically. On the other side, the pedestrian will just select the destination point in the mobile application on smartphone and sent the destination point to the server. The shortest path from the pedestrian position to the destination point is found out by the script on the server. This script also sends the environment photo of the first node on the acquired shortest path to the client as an indoor navigation module.

  14. A compact electroencephalogram recording device with integrated audio stimulation system

    Science.gov (United States)

    Paukkunen, Antti K. O.; Kurttio, Anttu A.; Leminen, Miika M.; Sepponen, Raimo E.

    2010-06-01

    A compact (96×128×32 mm3, 374 g), battery-powered, eight-channel electroencephalogram recording device with an integrated audio stimulation system and a wireless interface is presented. The recording device is capable of producing high-quality data, while the operating time is also reasonable for evoked potential studies. The effective measurement resolution is about 4 nV at 200 Hz sample rate, typical noise level is below 0.7 μVrms at 0.16-70 Hz, and the estimated operating time is 1.5 h. An embedded audio decoder circuit reads and plays wave sound files stored on a memory card. The activities are controlled by an 8 bit main control unit which allows accurate timing of the stimuli. The interstimulus interval jitter measured is less than 1 ms. Wireless communication is made through bluetooth and the data recorded are transmitted to an external personal computer (PC) interface in real time. The PC interface is implemented with LABVIEW® and in addition to data acquisition it also allows online signal processing, data storage, and control of measurement activities such as contact impedance measurement, for example. The practical application of the device is demonstrated in mismatch negativity experiment with three test subjects.

  15. An integrated semiconductor device enabling non-optical genome sequencing.

    Science.gov (United States)

    Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

    2011-07-20

    The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

  16. Ultra-compact laser beam steering device using holographically formed two dimensional photonic crystal.

    Science.gov (United States)

    Dou, Xinyuan; Chen, Xiaonan; Chen, Maggie Yihong; Wang, Alan Xiaolong; Jiang, Wei; Chen, Ray T

    2010-03-01

    In this paper, we report the theoretical study of polymer-based photonic crystals for laser beam steering which is based on the superprism effect as well as the experiment fabrication of the two dimensional photonic crystals for the laser beam steering. Superprism effect, the principle for beam steering, was separately studied in details through EFC (Equifrequency Contour) analysis. Polymer based photonic crystals were fabricated through double exposure holographic interference method using SU8-2007. The experiment results showed a beam steering angle of 10 degree for 30 nm wavelength variation.

  17. Compact beam splitters with deep gratings for miniature photonic integrated circuits: design and implementation aspects.

    Science.gov (United States)

    Chen, Chin-Hui; Klamkin, Jonathan; Nicholes, Steven C; Johansson, Leif A; Bowers, John E; Coldren, Larry A

    2009-09-01

    We present an extensive study of an ultracompact grating-based beam splitter suitable for photonic integrated circuits (PICs) that have stringent density requirements. The 10 microm long beam splitter exhibits equal splitting, low insertion loss, and also provides a high extinction ratio in an integrated coherent balanced receiver. We further present the design strategies for avoiding mode distortion in the beam splitter and discuss optimization of the widths of the detectors to improve insertion loss and extinction ratio of the coherent receiver circuit. In our study, we show that the grating-based beam splitter is a competitive technology having low fabrication complexity for ultracompact PICs.

  18. Spectral properties of a two dimensional photonic crystal with quasi-integrable geometry

    International Nuclear Information System (INIS)

    Cruz-Bueno, J J; Méndez-Bermúdez, J A; Arriaga, J

    2013-01-01

    In this paper we study the statistical properties of the allowed frequencies for electromagnetic waves propagating in two-dimensional photonic crystals with quasi-integrable geometry. We compute the level spacing, group velocity, and curvature distributions (P(s), P(v), and P(c), respectively) and compare them with the corresponding random matrix theory predictions. Due to the quasi-integrability of the crystal we observe signatures of intermediate statistics in P(s) and P(c) for high refractive index contrasts

  19. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  20. 125 GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit

    Science.gov (United States)

    Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

    2017-12-01

    InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing module size are important challenges for the design of such detector system. Here we present for the first time an InGaAs/InP SPD with 1.25 GHz sine wave gating using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturization of avalanche extraction for high-frequency sine wave gating. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of MIRC, and the SPD exhibits excellent performance with 27.5 % photon detection efficiency, 1.2 kcps dark count rate, and 9.1 % afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

  1. 1.25  GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit.

    Science.gov (United States)

    Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

    2017-12-15

    InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15  mm×15  mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

  2. Integrated circuit authentication using photon-limited x-ray microscopy.

    Science.gov (United States)

    Markman, Adam; Javidi, Bahram

    2016-07-15

    A counterfeit integrated circuit (IC) may contain subtle changes to its circuit configuration. These changes may be observed when imaged using an x-ray; however, the energy from the x-ray can potentially damage the IC. We have investigated a technique to authenticate ICs under photon-limited x-ray imaging. We modeled an x-ray image with lower energy by generating a photon-limited image from a real x-ray image using a weighted photon-counting method. We performed feature extraction on the image using the speeded-up robust features (SURF) algorithm. We then authenticated the IC by comparing the SURF features to a database of SURF features from authentic and counterfeit ICs. Our experimental results with real and counterfeit ICs using an x-ray microscope demonstrate that we can correctly authenticate an IC image captured using orders of magnitude lower energy x-rays. To the best of our knowledge, this Letter is the first one on using a photon-counting x-ray imaging model and relevant algorithms to authenticate ICs to prevent potential damage.

  3. Integrated three-dimensional photonic nanostructures for achieving near-unity solar absorption and superhydrophobicity

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Ping; Lin, Shawn-Yu, E-mail: sylin@rpi.edu [The Future Chips Constellation and the Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Hsieh, Mei-Li [Department of Photonics, National Chia-Tung University, Hsinchu, Taiwan (China)

    2015-06-07

    In this paper, we proposed and realized 3D photonic nanostructures consisting of ultra-thin graded index antireflective coatings (ARCs) and woodpile photonic crystals. The use of the integrated ARC and photonic crystal structure can achieve broadband, broad-angle near unity solar absorption. The amorphous silicon based photonic nanostructure experimentally shows an average absorption of ∼95% for λ = 400–620 nm over a wide angular acceptance of θ = 0°–60°. Theoretical studies show that a Gallium Arsenide (GaAs) based structure can achieve an average absorption of >95% for λ = 400–870 nm. Furthermore, the use of the slanted SiO{sub 2} nanorod ARC surface layer by glancing angle deposition exhibits Cassie-Baxter state wetting, and superhydrophobic surface is obtained with highest water contact angle θ{sub CB} ∼ 153°. These properties are fundamentally important for achieving maximum solar absorption and surface self-cleaning in thin film solar cell applications.

  4. Photon technology. Hard photon technology; Photon technology. Hard photon gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    Research results of hard photon technology have been summarized as a part of novel technology development highly utilizing the quantum nature of photon. Hard photon technology refers to photon beam technologies which use photon in the 0.1 to 200 nm wavelength region. Hard photon has not been used in industry due to the lack of suitable photon sources and optical devices. However, hard photon in this wavelength region is expected to bring about innovations in such areas as ultrafine processing and material synthesis due to its atom selective reaction, inner shell excitation reaction, and spatially high resolution. Then, technological themes and possibility have been surveyed. Although there are principle proposes and their verification of individual technologies for the technologies of hard photon generation, regulation and utilization, they are still far from the practical applications. For the photon source technology, the laser diode pumped driver laser technology, laser plasma photon source technology, synchrotron radiation photon source technology, and vacuum ultraviolet photon source technology are presented. For the optical device technology, the multi-layer film technology for beam mirrors and the non-spherical lens processing technology are introduced. Also are described the reduction lithography technology, hard photon excitation process, and methods of analysis and measurement. 430 refs., 165 figs., 23 tabs.

  5. Embedded RF Photonic Crystals as Routing and Processing Devices in Naval Aperstructures

    National Research Council Canada - National Science Library

    Prather, Dennis W

    2008-01-01

    .... To address these issues, we utilize advanced artificial materials - photonic crystals (PhCs) and meta-material - to construct a sensing head with minaturized antennas as RF receivers and embedded signal channelization for pre-processing...

  6. Self-Assembly of Nanocomposite Nonlinear Optical Materials for Photonic Devices, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This program targets the development of new highly anisotropic nonlinear optical nanocomposite materials for NASA and non-NASA applications in advanced photonic and...

  7. Photonic integration

    NARCIS (Netherlands)

    Smit, M.K.

    2005-01-01

    Since 2000 global network traffic is dominated by internet (IP) data, with growth rates in the order of 100 % per year. This explosive growth would have been impossible without the introduction of optical technology in the network. With the rapidly increasing bit rates required in the access network

  8. Photonic Color Filters Integrated with Organic Solar Cells for Energy Harvesting

    KAUST Repository

    Park, Hui Joon

    2011-09-27

    Color filters are indispensable in most color display applications. In most cases, they are chemical pigment-based filters, which produce a particular color by absorbing its complementary color, and the absorbed energy is totally wasted. If the absorbed and wasted energy can be utilized, e.g., to generate electricity, innovative energy-efficient electronic media could be envisioned. Here we show photonic nanostructures incorporated with photovoltaics capable of producing desirable colors in the visible band and utilize the absorbed light to simultaneously generate electrical powers. In contrast to the traditional colorant-based filters, these devices offer great advantages for electro-optic applications. © 2011 American Chemical Society.

  9. Time-evolution of photon heat current through series coupled two mesoscopic Josephson junction devices

    Science.gov (United States)

    Lu, Wen-Ting; Zhao, Hong-Kang; Wang, Jian

    2018-03-01

    Photon heat current tunneling through a series coupled two mesoscopic Josephson junction (MJJ) system biased by dc voltages has been investigated by employing the nonequilibrium Green’s function approach. The time-oscillating photon heat current is contributed by the superposition of different current branches associated with the frequencies of MJJs ω j (j = 1, 2). Nonlinear behaviors are exhibited to be induced by the self-inductance, Coulomb interaction, and interference effect relating to the coherent transport of Cooper pairs in the MJJs. Time-oscillating pumping photon heat current is generated in the absence of temperature difference, while it becomes zero after time-average. The combination of ω j and Coulomb interactions in the MJJs determines the concrete heat current configuration. As the external and intrinsic frequencies ω j and ω 0 of MJJs match some specific combinations, resonant photon heat current exhibits sinusoidal behaviors with large amplitudes. Symmetric and asymmetric evolutions versus time t with respect to ω 1 t and ω 2 t are controlled by the applied dc voltages of V 1 and V 2. The dc photon heat current formula is a special case of the general time-dependent heat current formula when the bias voltages are settled to zero. The Aharonov-Bohm effect has been investigated, and versatile oscillation structures of photon heat current can be achieved by tuning the magnetic fluxes threading through separating MJJs.

  10. System Engineering of Photonic Systems for Space Application

    Science.gov (United States)

    Watson, Michael D.; Pryor, Jonathan E.

    2014-01-01

    The application of photonics in space systems requires tight integration with the spacecraft systems to ensure accurate operation. This requires some detailed and specific system engineering to properly incorporate the photonics into the spacecraft architecture and to guide the spacecraft architecture in supporting the photonics devices. Recent research in product focused, elegant system engineering has led to a system approach which provides a robust approach to this integration. Focusing on the mission application and the integration of the spacecraft system physics incorporation of the photonics can be efficiently and effectively accomplished. This requires a clear understanding of the driving physics properties of the photonics device to ensure proper integration with no unintended consequences. The driving physics considerations in terms of optical performance will be identified for their use in system integration. Keywords: System Engineering, Optical Transfer Function, Optical Physics, Photonics, Image Jitter, Launch Vehicle, System Integration, Organizational Interaction

  11. Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

    Energy Technology Data Exchange (ETDEWEB)

    Willander, M; Nur, O; Zhao, Q X; Yang, L L [Department of Science and Technology, Linkoeping University, SE-601 74 Norrkoeping (Sweden); Lorenz, M; Cao, B Q; Zuniga Perez, J; Czekalla, C; Zimmermann, G; Grundmann, M [Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany); Bakin, A; Behrends, A; Al-Suleiman, M; El-Shaer, A; Che Mofor, A; Postels, B; Waag, A [Institute of Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Boukos, N; Travlos, A [National Center for Scientific Research ' Demokritos' , Institute of Materials Science, GR 15310 Agia Paraskevi Attikis, Athens (Greece); Kwack, H S, E-mail: magwi@itn.liu.s [CEA-CNRS Group ' Nanophysique et Semiconducteurs' , Institut Neel, CNRS and Universit' e Joseph Fourier, F-38042 Grenoble (France)

    2009-08-19

    Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

  12. Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

    Science.gov (United States)

    Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

    2018-04-16

    Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

  13. The Goddard Integral Field Spectrograph at Apache Point Observatory: Current Status and Progress Towards Photon Counting

    Science.gov (United States)

    McElwain, Michael W.; Grady, Carol A.; Bally, John; Brinkmann, Jonathan V.; Bubeck, James; Gong, Qian; Hilton, George M.; Ketzeback, William F.; Lindler, Don; Llop Sayson, Jorge; Malatesta, Michael A.; Norton, Timothy; Rauscher, Bernard J.; Rothe, Johannes; Straka, Lorrie; Wilkins, Ashlee N.; Wisniewski, John P.; Woodgate, Bruce E.; York, Donald G.

    2015-01-01

    We present the current status and progress towards photon counting with the Goddard Integral Field Spectrograph (GIFS), a new instrument at the Apache Point Observatory's ARC 3.5m telescope. GIFS is a visible light imager and integral field spectrograph operating from 400-1000 nm over a 2.8' x 2.8' and 14' x 14' field of view, respectively. As an IFS, GIFS obtains over 1000 spectra simultaneously and its data reduction pipeline reconstructs them into an image cube that has 32 x 32 spatial elements and more than 200 spectral channels. The IFS mode can be applied to a wide variety of science programs including exoplanet transit spectroscopy, protostellar jets, the galactic interstellar medium probed by background quasars, Lyman-alpha emission line objects, and spectral imaging of galactic winds. An electron-multiplying CCD (EMCCD) detector enables photon counting in the high spectral resolution mode to be demonstrated at the ARC 3.5m in early 2015. The EMCCD work builds upon successful operational and characterization tests that have been conducted in the IFS laboratory at NASA Goddard. GIFS sets out to demonstrate an IFS photon-counting capability on-sky in preparation for future exoplanet direct imaging missions such as the AFTA-Coronagraph, Exo-C, and ATLAST mission concepts. This work is supported by the NASA APRA program under RTOP 10-APRA10-0103.

  14. Highly localized distributed Brillouin scattering response in a photonic integrated circuit

    Directory of Open Access Journals (Sweden)

    Atiyeh Zarifi

    2018-03-01

    Full Text Available The interaction of optical and acoustic waves via stimulated Brillouin scattering (SBS has recently reached on-chip platforms, which has opened new fields of applications ranging from integrated microwave photonics and on-chip narrow-linewidth lasers, to phonon-based optical delay and signal processing schemes. Since SBS is an effect that scales exponentially with interaction length, on-chip implementation on a short length scale is challenging, requiring carefully designed waveguides with optimized opto-acoustic overlap. In this work, we use the principle of Brillouin optical correlation domain analysis to locally measure the SBS spectrum with high spatial resolution of 800 μm and perform a distributed measurement of the Brillouin spectrum along a spiral waveguide in a photonic integrated circuit. This approach gives access to local opto-acoustic properties of the waveguides, including the Brillouin frequency shift and linewidth, essential information for the further development of high quality photonic-phononic waveguides for SBS applications.

  15. III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

    KAUST Repository

    Shen, Chao

    2017-04-01

    The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

  16. Photon-induced cell migration and integrin expression promoted by DNA integration of HPV16 genome

    International Nuclear Information System (INIS)

    Rieken, Stefan; Simon, Florian; Habermehl, Daniel; Dittmar, Jan Oliver; Combs, Stephanie E.; Weber, Klaus; Debus, Juergen; Lindel, Katja

    2014-01-01

    Persistent human papilloma virus 16 (HPV16) infections are a major cause of cervical cancer. The integration of the viral DNA into the host genome causes E2 gene disruption which prevents apoptosis and increases host cell motility. In cervical cancer patients, survival is limited by local infiltration and systemic dissemination. Surgical control rates are poor in cases of parametrial infiltration. In these patients, radiotherapy (RT) is administered to enhance local control. However, photon irradiation itself has been reported to increase cell motility. In cases of E2-disrupted cervical cancers, this phenomenon would impose an additional risk of enhanced tumor cell motility. Here, we analyze mechanisms underlying photon-increased migration in keratinocytes with differential E2 gene status. Isogenic W12 (intact E2 gene status) and S12 (disrupted E2 gene status) keratinocytes were analyzed in fibronectin-based and serum-stimulated migration experiments following single photon doses of 0, 2, and 10 Gy. Quantitative FACS analyses of integrin expression were performed. Migration and adhesion are increased in E2 gene-disrupted keratinocytes. E2 gene disruption promotes attractability by serum components, therefore, effectuating the risk of local infiltration and systemic dissemination. In S12 cells, migration is further increased by photon RT which leads to enhanced expression of fibronectin receptor integrins. HPV16-associated E2 gene disruption is a main predictor of treatment-refractory cancer virulence. E2 gene disruption promotes cell motility. Following photon RT, E2-disrupted tumors bear the risk of integrin-related infiltration and dissemination. (orig.) [de

  17. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  18. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    International Nuclear Information System (INIS)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

    2015-01-01

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes

  19. Photonics-on-a-chip: recent advances in integrated waveguides as enabling detection elements for real-world, lab-on-a-chip biosensing applications.

    Science.gov (United States)

    Washburn, Adam L; Bailey, Ryan C

    2011-01-21

    By leveraging advances in semiconductor microfabrication technologies, chip-integrated optical biosensors are poised to make an impact as scalable and multiplexable bioanalytical measurement tools for lab-on-a-chip applications. In particular, waveguide-based optical sensing technology appears to be exceptionally amenable to chip integration and miniaturization, and, as a result, the recent literature is replete with examples of chip-integrated waveguide sensing platforms developed to address a wide range of contemporary analytical challenges. As an overview of the most recent advances within this dynamic field, this review highlights work from the last 2-3 years in the areas of grating-coupled, interferometric, photonic crystal, and microresonator waveguide sensors. With a focus towards device integration, particular emphasis is placed on demonstrations of biosensing using these technologies within microfluidically controlled environments. In addition, examples of multiplexed detection and sensing within complex matrices--important features for real-world applicability--are given special attention.

  20. Refractive index engineering of high performance coupler for compact photonic integrated circuits

    Science.gov (United States)

    Liu, Lu; Zhou, Zhiping

    2017-04-01

    High performance couplers are highly desired in many applications, but the design is limited by nearly unchangeable material refractive index. To tackle this issue, refractive index engineering method is investigated, which can be realized by subwavelength grating. Subwavelength gratings are periodical structures with pitches small enough to locally synthesize the refractive index of photonic waveguides, which allows direct control of optical profile as well as easier fabrication process. This review provides an introduction to the basics of subwavelength structures and pay special attention to the design strategies of some representative examples of subwavelength grating devices, including: edge couplers, fiber-chip grating couplers, directional couplers and multimode interference couplers. Benefited from the subwavelength grating which can engineer the refractive index as well as birefringence and dispersion, these devices show better performance when compared to their conventional counterparts.

  1. Integrated liquid-core optical fibers for ultra-efficient nonlinear liquid photonics.

    Science.gov (United States)

    Kieu, K; Schneebeli, L; Norwood, R A; Peyghambarian, N

    2012-03-26

    We have developed a novel integrated platform for liquid photonics based on liquid core optical fiber (LCOF). The platform is created by fusion splicing liquid core optical fiber to standard single-mode optical fiber making it fully integrated and practical - a major challenge that has greatly hindered progress in liquid-photonic applications. As an example, we report here the realization of ultralow threshold Raman generation using an integrated CS₂ filled LCOF pumped with sub-nanosecond pulses at 532 nm and 1064 nm. The measured energy threshold for the Stokes generation is 1nJ, about three orders of magnitude lower than previously reported values in the literature for hydrogen gas, a popular Raman medium. The integrated LCOF platform opens up new possibilities for ultralow power nonlinear optics such as efficient white light generation for displays, mid-IR generation, slow light generation, parametric amplification, all-optical switching and wavelength conversion using liquids that have orders of magnitude larger optical nonlinearities compared with silica glass.

  2. Power spectrum analysis for defect screening in integrated circuit devices

    Science.gov (United States)

    Tangyunyong, Paiboon; Cole Jr., Edward I.; Stein, David J.

    2011-12-01

    A device sample is screened for defects using its power spectrum in response to a dynamic stimulus. The device sample receives a time-varying electrical signal. The power spectrum of the device sample is measured at one of the pins of the device sample. A defect in the device sample can be identified based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

  3. Fabrication of micro- and nanometre-scale polymer structures in liquid crystal devices for next generation photonics applications

    Science.gov (United States)

    Tartan, Chloe C.; Salter, Patrick S.; Booth, Martin J.; Morris, Stephen M.; Elston, Steve J.

    2016-09-01

    Direct Laser Writing (DLW) by two-photon photopolymerization (TPP) enables the fabrication of micron-scale polymeric structures in soft matter systems. The technique has implications in a broad range of optics and photonics; in particular fast-switching liquid crystal (LC) modes for the development of next generation display technologies. In this paper, we report two different methodologies using our TPP-based fabrication technique. Two explicit examples are provided of voltage-dependent LC director profiles that are inherently unstable, but which appear to be promising candidates for fast-switching photonics applications. In the first instance, 1 μm-thick periodic walls of polymer network are written into a planar aligned (parallel rubbed) nematic pi-cell device containing a nematic LC-monomer mixture. The structures are fabricated when the device is electrically driven into a fast-switching nematic LC state and aberrations induced by the device substrates are corrected for by virtue of the adaptive optics elements included within the DLW setup. Optical polarizing microscopy images taken post-fabrication reveal that polymer walls oriented perpendicular to the rubbing direction promote the stability of the so-called optically compensated bend mode upon removal of the externally applied field. In the second case, polymer walls are written in a nematic LC-optically adhesive glue mixture. A polymer- LCs-polymer-slices or `POLICRYPS' template is formed by immersing the device in acetone post-fabrication to remove any remaining non-crosslinked material. Injecting the resultant series of polymer microchannels ( 1 μm-thick) with a short-pitch, chiral nematic LC mixture leads to the spontaneous alignment of a fast-switching chiral nematic mode, where the helical axis lies parallel to the glass substrates. Optimal contrast between the bright and dark states of the uniform lying helix alignment is achieved when the structures are spaced at the order of the device thickness

  4. Integration of optically active Neodymium ions in Niobium devices (Nd:Nb): quantum memory for hybrid quantum entangled systems

    Science.gov (United States)

    Nayfeh, O. M.; Chao, D.; Djapic, N.; Sims, P.; Liu, B.; Sharma, S.; Lerum, L.; Fahem, M.; Dinh, V.; Zlatanovic, S.; Lynn, B.; Torres, C.; Higa, B.; Moore, J.; Upchurch, A.; Cothern, J.; Tukeman, M.; Barua, R.; Davidson, B.; Ramirez, A. D.; Rees, C. D.; Anant, V.; Kanter, G. S.

    2017-08-01

    Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb is implanted with Nd spanning 10-60 keV energy and 1013-1014 cm-2 dose producing a 1- 3% Nd:Nb concentration as confirmed by energy-dispersive X-ray spectroscopy. Scanning confocal photoluminescence (PL) at 785 nm excitation are made and sharp emission peaks from the 4F3/2 -red shift and increased broadening to a 4.8 nm linewidth. Nd:Nb is photoconductive and responds strongly to applied fields. Furthermore, optically detected magnetic resonance (ODMR) measurements are presented spanning near-infrared telecom band. The modulation of the emission intensity with magnetic field and microwave power by integration of these magnetic Kramer type Nd ions is quantified along with spin echoes under pulsed microwave π-π/2 excitation. A hybrid system architecture is proposed using spin and photon quantum information storage with the nuclear and electron states of the Nd3+ and neighboring Nb atoms that can couple qubit states to hyperfine 7/2 spin states of Nd:Nb and onto NIR optical levels excitable with entangled single photons, thus enabling implementation of computing and networking/internet protocols in a single platform.

  5. Virtual Photon Contribution to Frictional Drag in Double-layer Devices

    DEFF Research Database (Denmark)

    Donarini, Andrea; Ferrari, R.; Jauho, Antti-Pekka

    2003-01-01

    Frictional drag between coupled two-dimensional charge systems is commonly viewed as a second order effect arising either from screened Coulomb interaction, or phonon exchange. We point out that for single-photon exchange the first order contribution does not have to vanish even at T = 0, and eva......Frictional drag between coupled two-dimensional charge systems is commonly viewed as a second order effect arising either from screened Coulomb interaction, or phonon exchange. We point out that for single-photon exchange the first order contribution does not have to vanish even at T = 0...

  6. Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions

    Science.gov (United States)

    Englund, Dirk R.; Gan, Xuetao

    2017-03-21

    Techniques for coupling light into graphene using a planar photonic crystal having a resonant cavity characterized by a mode volume and a quality factor and at least one graphene layer positioned in proximity to the planar photonic crystal to at least partially overlap with an evanescent field of the resonant cavity. At least one mode of the resonant cavity can couple into the graphene layer via evanescent coupling. The optical properties of the graphene layer can be controlled, and characteristics of the graphene-cavity system can be detected. Coupling light into graphene can include electro-optic modulation of light, photodetection, saturable absorption, bistability, and autocorrelation.

  7. Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals

    Science.gov (United States)

    Jiménez‐Solano, Alberto; Delgado‐Sánchez, José‐Maria; Calvo, Mauricio E.; Miranda‐Muñoz, José M.; Lozano, Gabriel; Sancho, Diego; Sánchez‐Cortezón, Emilio

    2015-01-01

    Abstract Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one‐dimensional photonic crystals and in‐plane CuInGaSe2 (CIGS) solar cells. Highly uniform and wide‐area nanostructured multilayers with photonic crystal properties were deposited by a cost‐efficient and scalable liquid processing amenable to large‐scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in‐plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long‐term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd. PMID:27656090

  8. Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals.

    Science.gov (United States)

    Jiménez-Solano, Alberto; Delgado-Sánchez, José-Maria; Calvo, Mauricio E; Miranda-Muñoz, José M; Lozano, Gabriel; Sancho, Diego; Sánchez-Cortezón, Emilio; Míguez, Hernán

    2015-12-01

    Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one-dimensional photonic crystals and in-plane CuInGaSe 2 (CIGS) solar cells. Highly uniform and wide-area nanostructured multilayers with photonic crystal properties were deposited by a cost-efficient and scalable liquid processing amenable to large-scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in-plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long-term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.

  9. Label-free silicon photonic biosensor system with integrated detector array

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

    2010-01-01

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

  10. Label-free silicon photonic biosensor system with integrated detector array.

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

    2009-08-07

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

  11. Graphene-Based Integrated Photovoltaic Energy Harvesting/Storage Device.

    Science.gov (United States)

    Chien, Chih-Tao; Hiralal, Pritesh; Wang, Di-Yan; Huang, I-Sheng; Chen, Chia-Chun; Chen, Chun-Wei; Amaratunga, Gehan A J

    2015-06-24

    Energy scavenging has become a fundamental part of ubiquitous sensor networks. Of all the scavenging technologies, solar has the highest power density available. However, the energy source is erratic. Integrating energy conversion and storage devices is a viable route to obtain self-powered electronic systems which have long-term maintenance-free operation. In this work, we demonstrate an integrated-power-sheet, consisting of a string of series connected organic photovoltaic cells (OPCs) and graphene supercapacitors on a single substrate, using graphene as a common platform. This results in lighter and more flexible power packs. Graphene is used in different forms and qualities for different functions. Chemical vapor deposition grown high quality graphene is used as a transparent conductor, while solution exfoliated graphene pastes are used as supercapacitor electrodes. Solution-based coating techniques are used to deposit the separate components onto a single substrate, making the process compatible with roll-to-roll manufacture. Eight series connected OPCs based on poly(3-hexylthiophene)(P3HT):phenyl-C61-butyric acid methyl ester (PC60 BM) bulk-heterojunction cells with aluminum electrodes, resulting in a ≈5 V open-circuit voltage, provide the energy harvesting capability. Supercapacitors based on graphene ink with ≈2.5 mF cm(-2) capacitance provide the energy storage capability. The integrated-power-sheet with photovoltaic (PV) energy harvesting and storage functions had a mass of 0.35 g plus the substrate. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Measurement of integrated and differential cross sections for isolated photon pairs in pp collisions at sqrt{

    CERN Document Server

    Li, Xingguo; The ATLAS collaboration

    2017-01-01

    A measurement of the production cross section for two isolated photons in proton-proton collisions at a centre-of-mass energy of √ s = 8 TeV is presented. The results are based on an integrated luminosity of 20.24 fb−1 recorded by the ATLAS detector at the Large Hadron Collider. The measurement considers photons with pseudorapidities satisfying |η γ | 40 GeV and Eγ T,2 > 30 GeV for the highest and second highest Eγ T photon produced in the interaction. The background due to hadronic jets and electrons is subtracted using data-driven techniques. The fiducial cross sections are corrected for detector effects and measured differentially as a function of six kinematic observables. The data are compared to fixed-order QCD calculations at 16 next-to-leading order (NLO) and next-to-next-to-leading-order (NNLO) accuracy as well as NLO computations including resummation of initial-state gluon radiation at next-to-next-to-leading-logarithm or matched to a parton shower.

  13. Analysis of Leaky Modes in Photonic Crystal Fibers Using the Surface Integral Equation Method

    Directory of Open Access Journals (Sweden)

    Jung-Sheng Chiang

    2018-04-01

    Full Text Available A fully vectorial algorithm based on the surface integral equation method for the modelling of leaky modes in photonic crystal fibers (PCFs by solely solving the complex propagation constants of characteristic equations is presented. It can be used for calculations of the complex effective index and confinement losses of photonic crystal fibers. As complex root examination is the key technique in the solution, the new algorithm which possesses this technique can be used to solve the leaky modes of photonic crystal fibers. The leaky modes of solid-core PCFs with a hexagonal lattice of circular air-holes are reported and discussed. The simulation results indicate how the confinement loss by the imaginary part of the effective index changes with air-hole size, the number of rings of air-holes, and wavelength. Confinement loss reductions can be realized by increasing the air-hole size and the number of air-holes. The results show that the confinement loss rises with wavelength, implying that the light leaks more easily for longer wavelengths; meanwhile, the losses are decreased significantly as the air-hole size d/Λ is increased.

  14. Medical device integration: CIOs must bridge the digital divide between devices and electronic medical records.

    Science.gov (United States)

    Raths, David

    2009-02-01

    To get funding approved for medical device integration, ClOs suggest focusing on specific patient safety or staff efficiency pain points. Organizations that make clinical engineering part of their IT team report fewer chain-of-command issues. It also helps IT people understand the clinical goals because the engineering people have been working closely with clinicians for years. A new organization has formed to work on collaboration between clinical engineers and IT professionals. For more information, go to www.ceitcollaboration.org. ECRI Institute has written a guide to handling the convergence of medical technology and hospital networks. Its "Medical Technology for the IT Professional: An Essential Guide for Working in Today's Healthcare Setting" also details how IT professionals can assist hospital technology planning and acquisition, and provide ongoing support for IT-based medical technologies. For more information, visit www.ecri.org/ITresource.

  15. Optoelectronic Device Integration in Silicon (OpSIS)

    Science.gov (United States)

    2015-10-26

    silicon-on-insulator," Opt. Express 22, 17872-17879 (2014) Y. Yang, C. Galland, Y. Liu, K. Tan , R. Ding, Q. Li, K. Bergman, T. Baehr-Jones, M...Jaeger, Nicolas AF; Chrostowski, Lukas; “Electrically tunable resonant filters in phase-shifted contra- directional couplers” IEEE Group IV Photonics... Nicolas AF; Chrostowski, Lukas; “Silicon photonic grating-assisted, contra-directional couplers” Optics express Vol. 21, No. 3; 3633-3650 (2013

  16. 77 FR 35426 - Certain Radio Frequency Integrated Circuits and Devices Containing Same; Institution of...

    Science.gov (United States)

    2012-06-13

    ... of certain radio frequency integrated circuits and devices containing same by reason of infringement... importation of certain radio frequency integrated circuits and devices containing same that infringe one or... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-848] Certain Radio Frequency Integrated...

  17. Microfluidic device for continuous single cells analysis via Raman spectroscopy enhanced by integrated plasmonic nanodimers

    KAUST Repository

    Perozziello, Gerardo; Candeloro, Patrizio; De Grazia, Antonio; Esposito, Francesco; Allione, Marco; Coluccio, Maria Laura; Tallerico, Rossana; Valpapuram, Immanuel; Tirinato, Luca; Das, Gobind; Giugni, Andrea; Torre, Bruno; Veltri, Pierangelo; Kruhne, Ulrich; Della Valle, Giuseppe; Di Fabrizio, Enzo M.

    2015-01-01

    In this work a Raman flow cytometer is presented. It consists of a microfluidic device that takes advantages of the basic principles of Raman spectroscopy and flow cytometry. The microfluidic device integrates calibrated microfluidic channels- where

  18. Architecture, development and implementation of a SWIR to visible integrated up-conversion imaging device

    Science.gov (United States)

    Sarusi, Gabby; Templeman, Tzvi; Hechster, Elad; Nissim, Nimrod; Vitenberg, Vladimir; Maman, Nitzan; Tal, Amir; Solodar, Assi; Makov, Guy; Abdulhalim, Ibrahim; Visoly-Fisher, Iris; Golan, Yuval

    2016-04-01

    A new concept of short wavelength infrared (SWIR) to visible upconversion integrated imaging device is proposed, modeled and some initial measured results are presented. The device is a hybrid inorganic-organic device that comprises six nano-metric scale sub-layers grown on n-type GaAs substrates. The first layer is a ~300nm thick PbSe nano-columnar absorber layer grown in (111) orientation to the substrate plan (100), with a diameter of 8- 10nm and therefore exhibit quantum confinement effects parallel to the substrate and bulk properties perpendicular to it. The advantage of this structure is the high oscillator strength and hence absorption to incoming SWIR photons while maintaining the high bulk mobility of photo-excited charges along the columns. The top of the PbSe absorber layer is coated with 20nm thick metal layer that serves as a dual sided mirror, as well as a potentially surface plasmon enhanced absorption in the PbSe nano-columns layer. The photo-excited charges (holes and electrons in opposite directions) are drifted under an external applied field to the OLED section (that is composed of a hole transport layer, an emission layer and an electron transport layer) where they recombine with injected electron from the transparent cathode and emit visible light through this cathode. Due to the high absorption and enhanced transport properties this architecture has the potential of high quantum efficiency, low cost and easy implementation in any optical system. As a bench-mark, alternative concept where InGaAs/InP heterojunction couple to liquid crystal optical spatial light modulator (OSLM) structure was built that shows a full upconversion to visible of 1550nm laser light.

  19. An Integrative Biosensor Based on Contra-Directional Coupling Two-dimensional Photonic Crystal Waveguides

    International Nuclear Information System (INIS)

    Xiao-Yu, Mao; Di-Bi, Yao; Ling-Yun, Zhao; Yi-Dong, Huang; Wei, Zhang; Jiang-De, Peng

    2008-01-01

    We propose an integrative biochemical sensor utilizing the dip in the transmission spectrum of a normal single-line defect photonic crystal (PC) waveguide, which has a contra-directional coupling with another PC waveguide. When the air holes in the PC slab are filled with a liquid analyte with different refractive indices, the dip has a wavelength shift By detecting the output power variation at a certain fixed wavelength, a sensitivity of 1.2 × 10 −4 is feasible. This structure is easy for integration due to its plane waveguide structure and omissible pump source. In addition, high signal to noise ratio can be expected because signal transmits via a normal single-line defect PC waveguide instead of the PC hole area or analyte

  20. Integrated lasers in crystalline double tungstates with focused-ion-beam nanostructured photonic cavities

    International Nuclear Information System (INIS)

    Ay, F; Iñurrategui, I; Geskus, D; Aravazhi, S; Pollnau, M

    2011-01-01

    Deeply etched Bragg gratings were fabricated by focused ion beam (FIB) milling in KGd x Lu 1-x (WO 4 ) 2 :Yb 3+ to obtain photonic cavity structures. By optimizing parameters such as dose per area, dwell time and pixel resolution the redeposition effects were minimized and grating structures more than 4 μm in depth with an improved sidewall angle of ∼ 5° were achieved. Fabry-Perot microcavities were defined and used to assess the optical performance of the grating structures at ∼ 1530 nm. An on-chip integrated laser cavity at ∼ 980 nm was achieved by defining a FIB reflective grating and FIB polished waveguide end-facet. With this cavity, an on-chip integrated waveguide laser in crystalline potassium double tungstate was demonstrated

  1. Photon echo quantum random access memory integration in a quantum computer

    International Nuclear Information System (INIS)

    Moiseev, Sergey A; Andrianov, Sergey N

    2012-01-01

    We have analysed an efficient integration of multi-qubit echo quantum memory (QM) into the quantum computer scheme based on squids, quantum dots or atomic resonant ensembles in a quantum electrodynamics cavity. Here, one atomic ensemble with controllable inhomogeneous broadening is used for the QM node and other nodes characterized by the homogeneously broadened resonant line are used for processing. We have found the optimal conditions for the efficient integration of the multi-qubit QM modified for the analysed scheme, and we have determined the self-temporal modes providing a perfect reversible transfer of the photon qubits between the QM node and arbitrary processing nodes. The obtained results open the way for realization of a full-scale solid state quantum computing based on the efficient multi-qubit QM. (paper)

  2. An integrated nonlinear optical loop mirror in silicon photonics for all-optical signal processing

    Directory of Open Access Journals (Sweden)

    Zifei Wang

    2018-02-01

    Full Text Available The nonlinear optical loop mirror (NOLM has been studied for several decades and has attracted considerable attention for applications in high data rate optical communications and all-optical signal processing. The majority of NOLM research has focused on silica fiber-based implementations. While various fiber designs have been considered to increase the nonlinearity and manage dispersion, several meters to hundreds of meters of fiber are still required. On the other hand, there is increasing interest in developing photonic integrated circuits for realizing signal processing functions. In this paper, we realize the first-ever passive integrated NOLM in silicon photonics and demonstrate its application for all-optical signal processing. In particular, we show wavelength conversion of 10 Gb/s return-to-zero on-off keying (RZ-OOK signals over a wavelength range of 30 nm with error-free operation and a power penalty of less than 2.5 dB, we achieve error-free nonreturn to zero (NRZ-to-RZ modulation format conversion at 10 Gb/s also with a power penalty of less than 2.8 dB, and we obtain error-free all-optical time-division demultiplexing of a 40 Gb/s RZ-OOK data signal into its 10 Gb/s tributary channels with a maximum power penalty of 3.5 dB.

  3. Methods and devices for maintaining a resonant wavelength of a photonic microresonator

    Science.gov (United States)

    Jones, Adam; Zortman, William A.

    2015-07-14

    A photonic microresonator incorporates a localized heater element within a section of an optical bus waveguide that is in proximity to the resonator structure. The application of an adjustable control voltage to the heater element provides a localized change in the refractive index value of the bus waveguide, compensating for temperature-induced wavelength drift and maintaining a stabilized value of the microresonator's resonant wavelength.

  4. New Generation of Superconducting Nanowire Single-Photon Detectors

    Directory of Open Access Journals (Sweden)

    Goltsman G.N.

    2015-01-01

    Full Text Available We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.

  5. Photon-induced cell migration and integrin expression promoted by DNA integration of HPV16 genome

    Energy Technology Data Exchange (ETDEWEB)

    Rieken, Stefan; Simon, Florian; Habermehl, Daniel; Dittmar, Jan Oliver; Combs, Stephanie E.; Weber, Klaus; Debus, Juergen; Lindel, Katja [University Hospital of Heidelberg, Department of Radiation Therapy and Radiation Oncology, Heidelberg (Germany)

    2014-10-15

    Persistent human papilloma virus 16 (HPV16) infections are a major cause of cervical cancer. The integration of the viral DNA into the host genome causes E2 gene disruption which prevents apoptosis and increases host cell motility. In cervical cancer patients, survival is limited by local infiltration and systemic dissemination. Surgical control rates are poor in cases of parametrial infiltration. In these patients, radiotherapy (RT) is administered to enhance local control. However, photon irradiation itself has been reported to increase cell motility. In cases of E2-disrupted cervical cancers, this phenomenon would impose an additional risk of enhanced tumor cell motility. Here, we analyze mechanisms underlying photon-increased migration in keratinocytes with differential E2 gene status. Isogenic W12 (intact E2 gene status) and S12 (disrupted E2 gene status) keratinocytes were analyzed in fibronectin-based and serum-stimulated migration experiments following single photon doses of 0, 2, and 10 Gy. Quantitative FACS analyses of integrin expression were performed. Migration and adhesion are increased in E2 gene-disrupted keratinocytes. E2 gene disruption promotes attractability by serum components, therefore, effectuating the risk of local infiltration and systemic dissemination. In S12 cells, migration is further increased by photon RT which leads to enhanced expression of fibronectin receptor integrins. HPV16-associated E2 gene disruption is a main predictor of treatment-refractory cancer virulence. E2 gene disruption promotes cell motility. Following photon RT, E2-disrupted tumors bear the risk of integrin-related infiltration and dissemination. (orig.) [German] Persistierende Infektionen mit humanen Papillomaviren 16 (HPV16) sind ein Hauptausloeser des Zervixkarzinoms. Die Integration der viralen DNS in das Wirtszellgenom fuehrt zum Integritaetsverlust des E2-Gens, wodurch in der Wirtszelle Apoptose verhindert und Motilitaet gesteigert werden. In

  6. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...

  7. Integrated Microwave Photonic Isolators: Theory, Experimental Realization and Application in a Unidirectional Ring Mode-Locked Laser Diode

    Directory of Open Access Journals (Sweden)

    Martijn J.R. Heck

    2015-09-01

    Full Text Available A novel integrated microwave photonic isolator is presented. It is based on the timed drive of a pair of optical modulators, which transmit a pulsed or oscillating optical signal with low loss, when driven in phase. A signal in the reverse propagation direction will find the modulators out of phase and, hence, will experience high loss. Optical and microwave isolation ratios were simulated to be in the range up to 10 dB and 20 dB, respectively, using parameters representative for the indium phosphide platform. The experimental realization of this device in the hybrid silicon platform showed microwave isolation in the 9 dB–22 dB range. Furthermore, we present a design study on the use of these isolators inside a ring mode-locked laser cavity. Simulations show that unidirectional operation can be achieved, with a 30–50-dB suppression of the counter propagating mode, at limited driving voltages. The potentially low noise and feedback-insensitive operation of such a laser makes it a very promising candidate for use as on-chip microwave or comb generators.

  8. Photon energy dependence of three fortuitous dosemeters from personal electronic devices, measured by optically stimulated luminescence

    International Nuclear Information System (INIS)

    Beerten, K.; Vanhavere, F.

    2010-01-01

    New data are presented with regard to the relative OSL sensitivity of three different emergency dosemeters irradiated to various photon energies approximately between 48 and 1250 keV using blue excitation light. Investigated components extracted from commonly worn objects include those from USB flash drives (alumina substrate), mobile phones (Ba-rich silicate) and credit cards (chip card module). Several basic properties have been investigated such as the overall radiation sensitivity, the shape of the decay curve and fading of the OSL signal. An increase of the sensitivity for low energies relative to 60 Co gamma rays can be observed for the three dosemeters, the increase being very pronounced for the Ba-rich component (factor of 10) and less pronounced for the chip card module (factor of 2). It is concluded that proper dose correction factors for photon energy have to be applied in order to accurately determine the absorbed dose to tissue. The OSL sensitivity to neutron irradiation was investigated as well, but this was found to be less than the gamma sensitivity. (authors)

  9. Photon energy dependence of three fortuitous dosemeters from personal electronic devices, measured by optically stimulated luminescence.

    Science.gov (United States)

    Beerten, Koen; Vanhavere, Filip

    2010-08-01

    New data are presented with regard to the relative OSL sensitivity of three different emergency dosemeters irradiated to various photon energies approximately between 48 and 1250 keV using blue excitation light. Investigated components extracted from commonly worn objects include those from USB flash drives (alumina substrate), mobile phones (Ba-rich silicate) and credit cards (chip card module). Several basic properties have been investigated such as the overall radiation sensitivity, the shape of the decay curve and fading of the OSL signal. An increase of the sensitivity for low energies relative to (60)Co gamma rays can be observed for the three dosemeters, the increase being very pronounced for the Ba-rich component (factor of 10) and less pronounced for the chip card module (factor of 2). It is concluded that proper dose correction factors for photon energy have to be applied in order to accurately determine the absorbed dose to tissue. The OSL sensitivity to neutron irradiation was investigated as well, but this was found to be less than the gamma sensitivity.

  10. Experimental Device for Learning of Logical Circuit Design using Integrated Circuits

    OpenAIRE

    石橋, 孝昭

    2012-01-01

    This paper presents an experimental device for learning of logical circuit design using integrated circuits and breadboards. The experimental device can be made at a low cost and can be used for many subjects such as logical circuits, computer engineering, basic electricity, electrical circuits and electronic circuits. The proposed device is effective to learn the logical circuits than the usual lecture.

  11. Evaluating and Predicting Patient Safety for Medical Devices With Integral Information Technology

    Science.gov (United States)

    2005-01-01

    323 Evaluating and Predicting Patient Safety for Medical Devices with Integral Information Technology Jiajie Zhang, Vimla L. Patel, Todd R...errors are due to inappropriate designs for user interactions, rather than mechanical failures. Evaluating and predicting patient safety in medical ...the users on the identified trouble spots in the devices. We developed two methods for evaluating and predicting patient safety in medical devices

  12. Wearable Fall Detector using Integrated Sensors and Energy Devices

    OpenAIRE

    Sungmook Jung; Seungki Hong; Jaemin Kim; Sangkyu Lee; Taeghwan Hyeon; Minbaek Lee; Dae-Hyeong Kim

    2015-01-01

    Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction wi...

  13. Integrating Touch-Enabled and Mobile Devices into Contemporary Mathematics Education

    Science.gov (United States)

    Meletiou-Mavrotheris, Maria, Ed.; Mavrou, Katerina, Ed.; Paparistodemou, Efi, Ed.

    2015-01-01

    Despite increased interest in mobile devices as learning tools, the amount of available primary research studies on their integration into mathematics teaching and learning is still relatively small due to the novelty of these technologies. "Integrating Touch-Enabled and Mobile Devices into Contemporary Mathematics Education" presents…

  14. Performance prediction for silicon photonics integrated circuits with layout-dependent correlated manufacturing variability.

    Science.gov (United States)

    Lu, Zeqin; Jhoja, Jaspreet; Klein, Jackson; Wang, Xu; Liu, Amy; Flueckiger, Jonas; Pond, James; Chrostowski, Lukas

    2017-05-01

    This work develops an enhanced Monte Carlo (MC) simulation methodology to predict the impacts of layout-dependent correlated manufacturing variations on the performance of photonics integrated circuits (PICs). First, to enable such performance prediction, we demonstrate a simple method with sub-nanometer accuracy to characterize photonics manufacturing variations, where the width and height for a fabricated waveguide can be extracted from the spectral response of a racetrack resonator. By measuring the spectral responses for a large number of identical resonators spread over a wafer, statistical results for the variations of waveguide width and height can be obtained. Second, we develop models for the layout-dependent enhanced MC simulation. Our models use netlist extraction to transfer physical layouts into circuit simulators. Spatially correlated physical variations across the PICs are simulated on a discrete grid and are mapped to each circuit component, so that the performance for each component can be updated according to its obtained variations, and therefore, circuit simulations take the correlated variations between components into account. The simulation flow and theoretical models for our layout-dependent enhanced MC simulation are detailed in this paper. As examples, several ring-resonator filter circuits are studied using the developed enhanced MC simulation, and statistical results from the simulations can predict both common-mode and differential-mode variations of the circuit performance.

  15. In situ 3D nanoprinting of free-form coupling elements for hybrid photonic integration

    Science.gov (United States)

    Dietrich, P.-I.; Blaicher, M.; Reuter, I.; Billah, M.; Hoose, T.; Hofmann, A.; Caer, C.; Dangel, R.; Offrein, B.; Troppenz, U.; Moehrle, M.; Freude, W.; Koos, C.

    2018-04-01

    Hybrid photonic integration combines complementary advantages of different material platforms, offering superior performance and flexibility compared with monolithic approaches. This applies in particular to multi-chip concepts, where components can be individually optimized and tested. The assembly of such systems, however, requires expensive high-precision alignment and adaptation of optical mode profiles. We show that these challenges can be overcome by in situ printing of facet-attached beam-shaping elements. Our approach allows precise adaptation of vastly dissimilar mode profiles and permits alignment tolerances compatible with cost-efficient passive assembly techniques. We demonstrate a selection of beam-shaping elements at chip and fibre facets, achieving coupling efficiencies of up to 88% between edge-emitting lasers and single-mode fibres. We also realize printed free-form mirrors that simultaneously adapt beam shape and propagation direction, and we explore multi-lens systems for beam expansion. The concept paves the way to automated assembly of photonic multi-chip systems with unprecedented performance and versatility.

  16. Photonic bandpass filter characteristics of multimode SOI waveguides integrated with submicron gratings.

    Science.gov (United States)

    Sah, Parimal; Das, Bijoy Krishna

    2018-03-20

    It has been shown that a fundamental mode adiabatically launched into a multimode SOI waveguide with submicron grating offers well-defined flat-top bandpass filter characteristics in transmission. The transmitted spectral bandwidth is controlled by adjusting both waveguide and grating design parameters. The bandwidth is further narrowed down by cascading two gratings with detuned parameters. A semi-analytical model is used to analyze the filter characteristics (1500  nm≤λ≤1650  nm) of the device operating in transverse-electric polarization. The proposed devices were fabricated with an optimized set of design parameters in a SOI substrate with a device layer thickness of 250 nm. The pass bandwidth of waveguide devices integrated with single-stage gratings are measured to be ∼24  nm, whereas the device with two cascaded gratings with slightly detuned periods (ΔΛ=2  nm) exhibits a pass bandwidth down to ∼10  nm.

  17. Obtaining better performance in the measurement-device-independent quantum key distribution with heralded single-photon sources

    Science.gov (United States)

    Zhou, Xing-Yu; Zhang, Chun-Hui; Zhang, Chun-Mei; Wang, Qin

    2017-11-01

    Measurement-device-independent quantum key distribution (MDI-QKD) has been widely investigated due to its remarkable advantages on the achievable transmission distance and practical security. However, the relative low key generation rate limits its real-life implementations. In this work, we adopt the newly proposed four-intensity decoy-state scheme [Phys. Rev. A 93, 042324 (2016), 10.1103/PhysRevA.93.042324] to study the performance of MDI-QKD with heralded single-photon sources (HSPS). Corresponding simulation results demonstrate that the four-intensity decoy-state scheme combining HSPS can drastically improve both the key generation rate and transmission distance in MDI-QKD, which may be very promising in future MDI-QKD systems.

  18. Complex-envelope alternating-direction-implicit FDTD method for simulating active photonic devices with semiconductor/solid-state media.

    Science.gov (United States)

    Singh, Gurpreet; Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong

    2012-06-15

    A complex-envelope (CE) alternating-direction-implicit (ADI) finite-difference time-domain (FDTD) approach to treat light-matter interaction self-consistently with electromagnetic field evolution for efficient simulations of active photonic devices is presented for the first time (to our best knowledge). The active medium (AM) is modeled using an efficient multilevel system of carrier rate equations to yield the correct carrier distributions, suitable for modeling semiconductor/solid-state media accurately. To include the AM in the CE-ADI-FDTD method, a first-order differential system involving CE fields in the AM is first set up. The system matrix that includes AM parameters is then split into two time-dependent submatrices that are then used in an efficient ADI splitting formula. The proposed CE-ADI-FDTD approach with AM takes 22% of the time as the approach of the corresponding explicit FDTD, as validated by semiconductor microdisk laser simulations.

  19. Insertion device and beam line plans for the Advanced Photon Source: A report and recommendations by the Insertion Device and Beam Line Planning Committee

    International Nuclear Information System (INIS)

    1988-02-01

    In the 7-GeV Advanced Photon Source (APS) Conceptual Design Report (CDR), fifteen complete experimental beam lines were specified in order to establish a representative technical and cost base for the components involved. In order to optimize the composition of the insertion devices and the beam line, these funds are considered a ''Trust Fund.'' The present report evaluates the optimization for the distribution of these funds so that the short- and long-term research programs will be most productive, making the facility more attractive from the user's point of view. It is recommended that part of the ''Trust Fund'' be used for the construction of the insertion devices, the front-end components, and the first-optics, minimizing the cost to potential users of completing a beam line. In addition, the possibility of cost savings resulting from replication and standardization of high multiplicity components (such as IDs, front ends, and first-optics instrumentation) is addressed. 2 refs., 5 tabs

  20. Microfluidic devices and methods for integrated flow cytometry

    Science.gov (United States)

    Srivastava, Nimisha [Goleta, CA; Singh, Anup K [Danville, CA

    2011-08-16

    Microfluidic devices and methods for flow cytometry are described. In described examples, various sample handling and preparation steps may be carried out within a same microfluidic device as flow cytometry steps. A combination of imaging and flow cytometry is described. In some examples, spiral microchannels serve as incubation chambers. Examples of automated sample handling and flow cytometry are described.

  1. Energy harvesting: an integrated view of materials, devices and applications

    Science.gov (United States)

    Radousky, H. B.; Liang, H.

    2012-12-01

    Energy harvesting refers to the set of processes by which useful energy is captured from waste, environmental, or mechanical sources and is converted into a usable form. The discipline of energy harvesting is a broad topic that includes established methods and materials such as photovoltaics and thermoelectrics, as well as more recent technologies that convert mechanical energy, magnetic energy and waste heat to electricity. This article will review various state-of-the-art materials and devices for direct energy conversion and in particular will include multistep energy conversion approaches. The article will highlight the nano-materials science underlying energy harvesting principles and devices, but also include more traditional bulk processes and devices as appropriate and synergistic. Emphasis is placed on device-design innovations that lead to higher efficiency energy harvesting or conversion technologies ranging from the cm/mm-scale down to MEMS/NEMS (micro- and nano-electromechanical systems) devices. Theoretical studies are reviewed, which address transport properties, crystal chemistry, thermodynamic analysis, energy transfer, system efficiency and device operation. New developments in experimental methods; device design and fabrication; nanostructured materials fabrication; materials properties; and device performance measurement techniques are discussed.

  2. Photonic Integrated Circuits for Cost-Effective, High Port Density, and Higher Capacity Optical Communications Systems

    Science.gov (United States)

    Chiappa, Pierangelo

    Bandwidth-hungry services, such as higher speed Internet, voice over IP (VoIP), and IPTV, allow people to exchange and store huge amounts of data among worldwide locations. In the age of global communications, domestic users, companies, and organizations around the world generate new contents making bandwidth needs grow exponentially, along with the need for new services. These bandwidth and connectivity demands represent a concern for operators who require innovative technologies to be ready for scaling. To respond efficiently to these demands, Alcatel-Lucent is fast moving toward photonic integration circuits technologies as the key to address best performances at the lowest "bit per second" cost. This article describes Alcatel-Lucent's contribution in strategic directions or achievements, as well as possible new developments.

  3. Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

    Science.gov (United States)

    Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

    2014-04-01

    Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

  4. New design of a triplexer using ring resonator integrated with directional coupler based on photonic crystals

    Science.gov (United States)

    Wu, Yaw-Dong; Shih, Tien-Tsorng; Lee, Jian-Jang

    2009-11-01

    In this paper, we proposed the design of directional coupler integrated with ring resonator based on two-dimensional photonic crystals (2D PCs) to develop a triplexer filter. It can be widely used as the fiber access network element for multiplexer-demultiplexer wavelength selective in fiber-to-the-home (FTTH) communication systems. The directional coupler is chosen to separate the wavelengths of 1490nm and 1310nm. The ring resonator separates the wavelength of 1550nm. The transmission efficiency is larger than 90%. Besides, the total size of propose triplexer is only 19μm×12μm. We present simulation results using the finite-difference time-domain (FDTD) method for the proposed structure.

  5. Rapidly reconfigurable high-fidelity optical arbitrary waveform generation in heterogeneous photonic integrated circuits.

    Science.gov (United States)

    Feng, Shaoqi; Qin, Chuan; Shang, Kuanping; Pathak, Shibnath; Lai, Weicheng; Guan, Binbin; Clements, Matthew; Su, Tiehui; Liu, Guangyao; Lu, Hongbo; Scott, Ryan P; Ben Yoo, S J

    2017-04-17

    This paper demonstrates rapidly reconfigurable, high-fidelity optical arbitrary waveform generation (OAWG) in a heterogeneous photonic integrated circuit (PIC). The heterogeneous PIC combines advantages of high-speed indium phosphide (InP) modulators and low-loss, high-contrast silicon nitride (Si3N4) arrayed waveguide gratings (AWGs) so that high-fidelity optical waveform syntheses with rapid waveform updates are possible. The generated optical waveforms spanned a 160 GHz spectral bandwidth starting from an optical frequency comb consisting of eight comb lines separated by 20 GHz channel spacing. The Error Vector Magnitude (EVM) values of the generated waveforms were approximately 16.4%. The OAWG module can rapidly and arbitrarily reconfigure waveforms upon every pulse arriving at 2 ns repetition time. The result of this work indicates the feasibility of truly dynamic optical arbitrary waveform generation where the reconfiguration rate or the modulator bandwidth must exceed the channel spacing of the AWG and the optical frequency comb.

  6. Porous silicon photonic devices using pulsed anodic etching of lightly doped silicon

    International Nuclear Information System (INIS)

    Escorcia-Garcia, J; Sarracino MartInez, O; Agarwal, V; Gracia-Jimenez, J M

    2009-01-01

    The fabrication of porous silicon photonic structures using lightly doped, p-type, silicon wafers (resistivity: 14-22 Ω cm) by pulsed anodic etching is reported. The optical properties have been found to be strongly dependent on the duty cycle and frequency of the applied current. All the interfaces of the single layered samples were digitally analysed by calculating the mean interface roughness (R m ). The interface roughness was found to be maximum for the sample with direct current. The use of a duty cycle above 50%, in a certain range of frequencies, is found to reduce the interface roughness. The optical properties of some microcavities and rugate filters are investigated from the optimized parameters of the duty cycle and frequency, using the current densities of 10, 90 and 150 mA cm -2 .

  7. Markov chain Monte Carlo methods for statistical analysis of RF photonic devices

    DEFF Research Database (Denmark)

    Piels, Molly; Zibar, Darko

    2016-01-01

    uncertainty is shown to give unsatisfactory and incorrect results due to the nonlinear relationship between the circuit parameters and the measured data. Markov chain Monte Carlo methods are shown to provide superior results, both for individual devices and for assessing within-die variation...

  8. Luneburg lens in silicon photonics.

    Science.gov (United States)

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  9. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  10. A device for combined neutron-photon processes in condensed matter

    International Nuclear Information System (INIS)

    Stoeckli, A.; Isacson, A.; Koch, M.; Furrer, A.

    1985-01-01

    A device has been developed for performing neutron scattering experiments with simultaneous irradiation by light at low temperatures. The light source is a halogen lamp which yields broad bands of wavelengths between 400 and 1000 nm by using appropriate filters. The light is guided by a series of lenses to the sample, which is mounted in a cooling system. A mechanical chopper may be inserted into the light beam in order to create light pulses with frequencies between 0.05 Hz and 5 Hz, and the neutron counts resulting from the dark and light experiments are separately stored. Our device has been used to study the light-induced dynamical behaviour of photosynthetic chlorophyll systems by neutron spectroscopy. (author)

  11. Fabrication and characterization of etched facets in InP for advanced packaging of Photonic Integrated circuits

    NARCIS (Netherlands)

    Lemos Alvares Dos Santos, R.M.; D'Agostino, D.; Rabbani Haghighi, H.; Smit, M.K.; Leijtens, X.J.M.; Garcia Blanco, S.M.; Boller, K.J.; Sefunc, M.A.; Geuzebroek, D.

    2014-01-01

    In this work we describe the fabrication and characterization of straight and angled etched facets compatible with the standard COBRA active-passive process. The implementation of these structures enables advanced packaging of photonic integrated circuits with multiple optical inputs and outputs.

  12. New photonic devices for ultrafast pulse processing operating on the basis of the diffraction-dispersion analogy

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Company, Victor; Minguez-Vega, Gladys; Climent, Vicent; Lands, Jesus [GROC-UJI, Departament de Fisica, Universitat Jaume I, 12080 Castello (Spain); Andres, Pedro [Departament d' Optica, Universitat de Valencia, 46100 Burjassot (Spain)], E-mail: lancis@fca.uji.es

    2008-11-01

    The space-time analogy is a well-known topic within wave optics that brings together some results from beam diffraction and pulse dispersion. On the above basis, and taking as starting point some classical concepts in Optics, several photonic devices have been proposed during the last few years with application in rapidly evolving fields such as ultrafast (femtosecond) optics or RF and microwave signal processing. In this contribution, we briefly review the above ideas with particular emphasis in the generation of trains of ultrafast pulses from periodic modulation of the phase of a CW laser source. This is the temporal analogue of Fresnel diffraction by a pure phase grating. Finally, we extend the analogy to the partially coherent case, what enables us to design an original technique for wavelength-to-time mapping of the spectrum of a temporally stationary source. Results of laboratory experiments concerning the generation of user-defined radio-frequency waveforms and filtering of microwave signals will be shown. The devices are operated with low-cost incoherent sources.

  13. Fabrication of optical fiber micro(and nano)-optical and photonic devices and components, using computer controlled spark thermo-pulling system

    International Nuclear Information System (INIS)

    Fatemi, H.; Mosleh, A.; Pashmkar, M.; Khaksar Kalati, A.

    2007-01-01

    Fabrication of optical fiber Micro (and Nano)-Optical component and devices, as well as, those applicable for photonic purposes are described. It is to demonstrate the practical capabilities and characterization of the previously reported Computer controlled spark thermo-pulling fabrication system.

  14. Integral particle reflection coefficient for oblique incidence of photons as universal function in the domain of initial energies up to 300 keV

    Directory of Open Access Journals (Sweden)

    Ljubenov Vladan L.

    2014-01-01

    Full Text Available In this paper we present the results of calculations and analyses of the integral particle reflection coefficient of photons for oblique photon incidence on planar targets, in the domain of initial photon energies from 100 keV to 300 keV. The results are based on the Monte Carlo simulations of the photon reflection from water, concrete, aluminum, iron, and copper materials, performed by the MCNP code. It has been observed that the integral particle reflection coefficient as a function of the ratio of total cross-section of photons and effective atomic number of target material shows universal behavior for all the analyzed shielding materials in the selected energy domain. Analytical formulas for different angles of photon incidence have been proposed, which describe the reflection of photons for all the materials and energies analyzed.

  15. Development and Testing of an Integrated Sandia Cooler Thermoelectric Device (SCTD).

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Terry A.; Staats, Wayne Lawrence,; Leick, Michael Thomas; Zimmerman, Mark D.; Radermacher, Reinhard; Martin, Cara; Nasuta, Dennis; Kalinowski, Paul; Hoffman, William

    2014-12-01

    This report describes a FY14 effort to develop an integrated Sandia Cooler T hermoelectric D evice (SCTD) . The project included a review of feasible thermoelectric (TE) cooling applications, baseline performance testing of an existing TE device, analysis and design development of an integrated SCTD assembly, and performance measurement and validation of the integrated SCTD prototype.

  16. Global search tool for the Advanced Photon Source Integrated Relational Model of Installed Systems (IRMIS) database

    International Nuclear Information System (INIS)

    Quock, D.E.R.; Cianciarulo, M.B.

    2007-01-01

    The Integrated Relational Model of Installed Systems (IRMIS) is a relational database tool that has been implemented at the Advanced Photon Source to maintain an updated account of approximately 600 control system software applications, 400,000 process variables, and 30,000 control system hardware components. To effectively display this large amount of control system information to operators and engineers, IRMIS was initially built with nine Web-based viewers: Applications Organizing Index, IOC, PLC, Component Type, Installed Components, Network, Controls Spares, Process Variables, and Cables. However, since each viewer is designed to provide details from only one major category of the control system, the necessity for a one-stop global search tool for the entire database became apparent. The user requirements for extremely fast database search time and ease of navigation through search results led to the choice of Asynchronous JavaScript and XML (AJAX) technology in the implementation of the IRMIS global search tool. Unique features of the global search tool include a two-tier level of displayed search results, and a database data integrity validation and reporting mechanism.

  17. Portable Integrated Wireless Device Threat Assessment to Aircraft Radio Systems

    Science.gov (United States)

    Salud, Maria Theresa P.; Williams, Reuben A. (Technical Monitor)

    2004-01-01

    An assessment was conducted on multiple wireless local area network (WLAN) devices using the three wireless standards for spurious radiated emissions to determine their threat to aircraft radio navigation systems. The measurement process, data and analysis are provided for devices tested using IEEE 802.11a, IEEE 802.11b, and Bluetooth as well as data from portable laptops/tablet PCs and PDAs (grouping known as PEDs). A comparison was made between wireless LAN devices and portable electronic devices. Spurious radiated emissions were investigated in the radio frequency bands for the following aircraft systems: Instrument Landing System Localizer and Glideslope, Very High Frequency (VHF) Communication, VHF Omnidirectional Range, Traffic Collision Avoidance System, Air Traffic Control Radar Beacon System, Microwave Landing System and Global Positioning System. Since several of the contiguous navigation systems were grouped under one encompassing measurement frequency band, there were five measurement frequency bands where spurious radiated emissions data were collected for the PEDs and WLAN devices. The report also provides a comparison between emissions data and regulatory emission limit.

  18. Design and characterization of low-loss 2D grating couplers for silicon photonics integrated circuits

    Science.gov (United States)

    Lacava, C.; Carrol, L.; Bozzola, A.; Marchetti, R.; Minzioni, P.; Cristiani, I.; Fournier, M.; Bernabe, S.; Gerace, D.; Andreani, L. C.

    2016-03-01

    We present the characterization of Silicon-on-insulator (SOI) photonic-crystal based 2D grating-couplers (2D-GCs) fabricated by CEA-Leti in the frame of the FP7 Fabulous project, which is dedicated to the realization of devices and systems for low-cost and high-performance passives-optical-networks. On the analyzed samples different test structures are present, including 2D-GC connected to another 2D-GC by different waveguides (in a Mach-Zehnder like configuration), and 2D-GC connected to two separate 2D-GCs, so as to allow a complete assessment of different parameters. Measurements were carried out using a tunable laser source operating in the extended telecom bandwidth and a fiber-based polarization controlling system at the input of device-under-test. The measured data yielded an overall fiber-to-fiber loss of 7.5 dB for the structure composed by an input 2D-GC connected to two identical 2D-GCs. This value was obtained at the peak wavelength of the grating, and the 3-dB bandwidth of the 2D-GC was assessed to be 43 nm. Assuming that the waveguide losses are negligible, so as to make a worst-case analysis, the coupling efficiency of the single 2D-GC results to be equal to -3.75 dB, constituting, to the best of our knowledge, the lowest value ever reported for a fully CMOS compatible 2D-GC. It is worth noting that both the obtained values are in good agreement with those expected by the numerical simulations performed using full 3D analysis by Lumerical FDTD-solutions.

  19. Cutoff-mesa isolated rib optical waveguide for III-V heterostructure photonic integrated circuits

    Science.gov (United States)

    Vawter, G.A.; Smith, R.E.

    1998-04-28

    A cutoff mesa rib waveguide provides single-mode performance regardless of any deep etches that might be used for electrical isolation between integrated electrooptic devices. Utilizing a principle of a cutoff slab waveguide with an asymmetrical refractive index profile, single mode operation is achievable with a wide range of rib widths and does not require demanding etch depth tolerances. This new waveguide design eliminates reflection effects, or self-interference, commonly seen when conventional rib waveguides are combined with deep isolation etches and thereby reduces high order mode propagation and crosstalk compared to the conventional rib waveguides. 7 figs.

  20. Device for simulation of integral dose distribution in multifield radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Belyakov, E K; Voronin, V V; Kolosova, V F; Moskalev, A I; Marova, Yu M; Stavitskii, R V; Yarovoi, V S

    1974-11-15

    Described is a device for simulation of the sum dose distribution at multifield radiation therapy; the device comprises a mechanical unit on which the emission sources and detectors are mounted, an electromechanical scanning equipment, amplifiers, an adder, a position sensor and a recording instrument. The device suggested raises an accuracy of a sick man radiation program elaboration at a remote multifield radiation therapy, permits to estimate the irradiated medium heterogeneity and beam shaper influence on the sum dose distribution and also ensured the information on the sum dose distribution of the relative or absolute units. Additional filters simulating heterogeneity and beam shaping conditions of ionizing radiation may be mounted between the quantum emission sources and detectors, and an amplifier with a variable amplification factor may be placed between the adders and printers. Thus it is possible to obtain a sum dose distribution at static methods of the remote radiation therapy at a high degree of accuracy (up to +-10%).