Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

International Nuclear Information System (INIS)

Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

2015-01-01

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

Growing perovskite into polymers for easy-processable optoelectronic devices

Science.gov (United States)

Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

2015-01-01

Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

Optoelectronic device with nanoparticle embedded hole injection/transport layer

Science.gov (United States)

Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

2012-01-03

An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

Ultrafast characterization of optoelectronic devices and systems

Science.gov (United States)

Zheng, Xuemei

The recent fast growth in high-speed electronics and optoelectronics has placed demanding requirements on testing tools. Electro-optic (EO) sampling is a well-established technique for characterization of high-speed electronic and optoelectronic devices and circuits. However, with the progress in device miniaturization, lower power consumption (smaller signal), and higher throughput (higher clock rate), EO sampling also needs to be updated, accordingly, towards better signal-to-noise ratio (SNR) and sensitivity, without speed sacrifice. In this thesis, a novel EO sampler with a single-crystal organic 4-dimethylamino-N-methy-4-stilbazolium tosylate (DAST) as the EO sensor is developed. The system exhibits sub-picosecond temporal resolution, sub-millivolt sensitivity, and a 10-fold improvement on SNR, compared with its LiTaO3 counterpart. The success is attributed to the very high EO coefficient, the very low dielectric constant, and the fast response, coming from the major contribution of the pi-electrons in DAST. With the advance of ultrafast laser technology, low-noise and compact femtosecond fiber lasers have come to maturation and become light-source options for ultrafast metrology systems. We have successfully integrated a femtosecond erbium-doped-fiber laser into an EO sampler, making the system compact and very reliable. The fact that EO sampling is essentially an impulse-response measurement process, requires integration of ultrashort (sub-picosecond) impulse generation network with the device under test. We have implemented a reliable lift-off and transfer technique in order to obtain epitaxial-quality freestanding low-temperature-grown GaAs (LT-GaAs) thin-film photo-switches, which can be integrated with many substrates. The photoresponse of our freestanding LT-GaAs devices was thoroughly characterized with the help of our EO sampler. As fast as 360 fs full-width-at-half-maximum (FWHM) and >1 V electrical pulses were obtained, with quantum efficiency

Optical Near-field Interactions and Forces for Optoelectronic Devices

Science.gov (United States)

Kohoutek, John Michael

Throughout history, as a particle view of the universe began to take shape, scientists began to realize that these particles were attracted to each other and hence came up with theories, both analytical and empirical in nature, to explain their interaction. The interaction pair potential (empirical) and electromagnetics (analytical) theories, both help to explain not only the interaction between the basic constituents of matter, such as atoms and molecules, but also between macroscopic objects, such as two surfaces in close proximity. The electrostatic force, optical force, and Casimir force can be categorized as such forces. A surface plasmon (SP) is a collective motion of electrons generated by light at the interface between two mediums of opposite signs of dielectric susceptibility (e.g. metal and dielectric). Recently, surface plasmon resonance (SPR) has been exploited in many areas through the use of tiny antennas that work on similar principles as radio frequency (RF) antennas in optoelectronic devices. These antennas can produce a very high gradient in the electric field thereby leading to an optical force, similar in concept to the surface forces discussed above. The Atomic Force Microscope (AFM) was introduced in the 1980s at IBM. Here we report on its uses in measuring these aforementioned forces and fields, as well as actively modulating and manipulating multiple optoelectronic devices. We have shown that it is possible to change the far field radiation pattern of an optical antenna-integrated device through modification of the near-field of the device. This modification is possible through change of the local refractive index or reflectivity of the "hot spot" of the device, either mechanically or optically. Finally, we have shown how a mechanically active device can be used to detect light with high gain and low noise at room temperature. It is the aim of several of these integrated and future devices to be used for applications in molecular sensing

Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

International Nuclear Information System (INIS)

Razeghi, M.

1991-01-01

The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry

New Development of Membrane Base Optoelectronic Devices

Directory of Open Access Journals (Sweden)

Leon Hamui

2017-12-01

Full Text Available It is known that one factor that affects the operation of optoelectronic devices is the effective protection of the semiconductor materials against environmental conditions. The permeation of atmospheric oxygen and water molecules into the device structure induces degradation of the electrodes and the semiconductor. As a result, in this communication we report the fabrication of semiconductor membranes consisting of Magnesium Phthalocyanine-allene (MgPc-allene particles dispersed in Nylon 11 films. These membranes combine polymer properties with organic semiconductors properties and also provide a barrier effect for the atmospheric gas molecules. They were prepared by high vacuum evaporation and followed by thermal relaxation technique. For the characterization of the obtained membranes, Fourier-transform infrared spectroscopy (FT-IR, scanning electron microscopy (SEM, and energy dispersive spectroscopy (EDS were used to determine the chemical and microstructural properties. UV-ViS, null ellipsometry, and visible photoluminescence (PL at room temperature were used to characterize the optoelectronic properties. These results were compared with those obtained for the organic semiconductors: MgPc-allene thin films. Additionally, semiconductor membranes devices have been prepared, and a study of the device electronic transport properties was conducted by measuring electrical current density-voltage (J-V characteristics by four point probes with different wavelengths. The resistance properties against different environmental molecules are enhanced, maintaining their semiconductor functionality that makes them candidates for optoelectronic applications.

Hybrid optoelectronic device with multiple bistable outputs

Energy Technology Data Exchange (ETDEWEB)

Costazo-Caso, Pablo A; Jin Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.are, E-mail: granieri@rose-hulma.edu, E-mail: siahmako@rose-hulma.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

2011-01-01

Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

Recent advances in flexible and wearable organic optoelectronic devices

Science.gov (United States)

Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

2018-01-01

Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices.

Science.gov (United States)

Yao, Yifan; Zhang, Lei; Leydecker, Tim; Samorì, Paolo

2018-05-23

Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

Integrated Optoelectronic Networks for Application-Driven Multicore Computing

Science.gov (United States)

2017-05-08

AFRL-AFOSR-VA-TR-2017-0102 Integrated Optoelectronic Networks for Application- Driven Multicore Computing Sudeep Pasricha COLORADO STATE UNIVERSITY...AND SUBTITLE Integrated Optoelectronic Networks for Application-Driven Multicore Computing 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-13-1-0110 5c...and supportive materials with innovative architectural designs that integrate these components according to system-wide application needs. 15

Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

Science.gov (United States)

Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

2016-06-01

Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Recent developments of truly stretchable thin film electronic and optoelectronic devices.

Science.gov (United States)

Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

2018-03-29

Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

Integrated NEMS and optoelectronics for sensor applications.

Energy Technology Data Exchange (ETDEWEB)

Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R. (Symphony Acoustics, Rio Rancho, NM); Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade (Symphony Acoustics, Rio Rancho, NM); Okandan, Murat; Peterson, Kenneth Allen

2008-01-01

This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Science.gov (United States)

2012-10-30

... Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Institution... certain optoelectronic devices for fiber optic communications, components thereof, and products containing... optoelectronic devices for fiber optic communications, components thereof, and products containing the same that...

Optoelectronic devices product assurance guideline for space application

Science.gov (United States)

Bensoussan, A.; Vanzi, M.

2017-11-01

New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.

Integrated optics and optoelectronics II; Proceedings of the Meeting, San Jose, CA, Sept. 17-19, 1990

International Nuclear Information System (INIS)

Wong, Ka-Kha

1991-01-01

The present volume on integrated optics and optoelectronics discusses proton- and ion-exchange technologies, radiation effects on GaAs optical system FET devices and on the dynamical behavior of LiNbO3 switching devices, advanced lightwave components and concepts, advanced optical interconnects concepts, advanced aircraft and engine control, IOCs for fiber-optic gyroscopes, and commercial integrated optical devices. Attention is given to integrated optical devices for high-data-rate serial-to-parallel conversion, the design of novel integrated optic devices using depressed index waveguides, and a low-loss L-band microwave fiber-optic link for control of a T/R module. Topics addressed include the temperature and modulation dependence of spectral linewidth in distributed Bragg reflector laser diodes, length-minimization design considerations in photonic integrated circuits incorporating directional couplers, and the photochemical formation of polymeric optical waveguides and devices for optical interconnection applications

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau

2016-01-01

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via

Organic Optoelectronic Devices Employing Small Molecules

Science.gov (United States)

Fleetham, Tyler Blain

Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt

Opto-electronic devices from block copolymers and their oligomers.

NARCIS (Netherlands)

Hadziioannou, G

1997-01-01

This paper presents research activities towards the development of polymer materials and devices for optoelectronics, An approach to controlling the conjugation length and transferring the luminescence properties of organic molecules to polymers through black copolymers containing well-defined

Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

Science.gov (United States)

Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

2017-11-01

Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

KAUST Repository

Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

2016-01-01

An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

Metamaterial mirrors in optoelectronic devices

KAUST Repository

Esfandyarpour, Majid; Garnett, Erik C.; Cui, Yi; McGehee, Michael D.; Brongersma, Mark L.

2014-01-01

The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

Metamaterial mirrors in optoelectronic devices

KAUST Repository

Esfandyarpour, Majid

2014-06-22

The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

Opto-electronic DNA chip-based integrated card for clinical diagnostics.

Science.gov (United States)

Marchand, Gilles; Broyer, Patrick; Lanet, Véronique; Delattre, Cyril; Foucault, Frédéric; Menou, Lionel; Calvas, Bernard; Roller, Denis; Ginot, Frédéric; Campagnolo, Raymond; Mallard, Frédéric

2008-02-01

Clinical diagnostics is one of the most promising applications for microfluidic lab-on-a-chip or lab-on-card systems. DNA chips, which provide multiparametric data, are privileged tools for genomic analysis. However, automation of molecular biology protocol and use of these DNA chips in fully integrated systems remains a great challenge. Simplicity of chip and/or card/instrument interfaces is amongst the most critical issues to be addressed. Indeed, current detection systems for DNA chip reading are often complex, expensive, bulky and even limited in terms of sensitivity or accuracy. Furthermore, for liquid handling in the lab-on-cards, many devices use complex and bulky systems, either to directly manipulate fluids, or to ensure pneumatic or mechanical control of integrated valves. All these drawbacks prevent or limit the use of DNA-chip-based integrated systems, for point-of-care testing or as a routine diagnostics tool. We present here a DNA-chip-based protocol integration on a plastic card for clinical diagnostics applications including: (1) an opto-electronic DNA-chip, (2) fluid handling using electrically activated embedded pyrotechnic microvalves with closing/opening functions. We demonstrate both fluidic and electric packaging of the optoelectronic DNA chip without major alteration of its electronical and biological functionalities, and fluid control using novel electrically activable pyrotechnic microvalves. Finally, we suggest a complete design of a card dedicated to automation of a complex biological protocol with a fully electrical fluid handling and DNA chip reading.

Materials for optoelectronic devices, OEICs and photonics

International Nuclear Information System (INIS)

Schloetterer, H.; Quillec, M.; Greene, P.D.; Bertolotti, M.

1991-01-01

The aim of the contributors in this volume is to give a current overview on the basic properties of nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques from growth (LPE to MOMBE) and for processing from surface passivation to ion beams. Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic materials development, as well as indicating the growth techniques that will be in use around the year 2000

Reconfigurable Integrated Optoelectronics

Directory of Open Access Journals (Sweden)

Richard Soref

2011-01-01

Full Text Available Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs and photonic integrated circuits (PICs manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.

Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

Science.gov (United States)

2018-01-08

engineer next-generation carbon-based optoelectronic and photonic devices with superior performance and capabilities. These devices include carbon...electronics; (4) nanostructured graphene plasmonics; and (5) polymer-nanotube conjugate chemistry . (1) Semiconducting carbon nanotube-based...applications (In Preparation, 2018). (5) Polymer-nanotube conjugate chemistry Conjugated polymers can be exploited as agents for selectively wrapping and

Mechano-chemical degradation of flexible electrodes for optoelectronic device applications

International Nuclear Information System (INIS)

Bejitual, T.S.; Morris, N.J.; Cronin, S.D.; Cairns, D.R.; Sierros, K.A.

2013-01-01

The electrical, optical, and structural integrity of flexible transparent electrodes is of paramount importance in the design and fabrication of optoelectronic devices such as organic light emitting diodes, liquid crystal displays, touch panels, solar cells, and solid-state lighting. The electrodes may corrode due to acid-containing pressure sensitive adhesives present in the device stacks. In addition, structural failure may occur due to external applied loading. The combined action and further accumulation of both repeated mechanical loading and corrosion can aggravate the loss of functionality of the electrodes. In this study we investigate, using the design of experimental methods, the effects of corrosion, applied mechanical strain, film thickness, and number of bending cycles on the electrical and structural integrity of indium tin oxide (ITO) and carbon nanotube (CNT) films both coated on polyethylene terephthalate (PET) substrates. In situ electrical resistance measurements suggest that fatigue-corrosion is found to be the most critical failure mode for the ITO-based coatings. For example, the change in ITO electrical resistance increase under fatigue-corrosion (1% strain, 150,000 cycles) is 5.8 times higher than that of fatigue mode alone. On the other hand, a minimum change in electrical resistance of the CNT-based electrodes is found when applying the same conditions. - Highlights: • Combined mechano-chemical effects on electrode durability. • CNT-based electrodes outperform ITO counterparts. • Importance of combined fatigue and corrosion action on device reliability

Mechano-chemical degradation of flexible electrodes for optoelectronic device applications

Energy Technology Data Exchange (ETDEWEB)

Bejitual, T.S.; Morris, N.J.; Cronin, S.D.; Cairns, D.R.; Sierros, K.A., E-mail: kostas.sierros@mail.wvu.edu

2013-12-31

The electrical, optical, and structural integrity of flexible transparent electrodes is of paramount importance in the design and fabrication of optoelectronic devices such as organic light emitting diodes, liquid crystal displays, touch panels, solar cells, and solid-state lighting. The electrodes may corrode due to acid-containing pressure sensitive adhesives present in the device stacks. In addition, structural failure may occur due to external applied loading. The combined action and further accumulation of both repeated mechanical loading and corrosion can aggravate the loss of functionality of the electrodes. In this study we investigate, using the design of experimental methods, the effects of corrosion, applied mechanical strain, film thickness, and number of bending cycles on the electrical and structural integrity of indium tin oxide (ITO) and carbon nanotube (CNT) films both coated on polyethylene terephthalate (PET) substrates. In situ electrical resistance measurements suggest that fatigue-corrosion is found to be the most critical failure mode for the ITO-based coatings. For example, the change in ITO electrical resistance increase under fatigue-corrosion (1% strain, 150,000 cycles) is 5.8 times higher than that of fatigue mode alone. On the other hand, a minimum change in electrical resistance of the CNT-based electrodes is found when applying the same conditions. - Highlights: • Combined mechano-chemical effects on electrode durability. • CNT-based electrodes outperform ITO counterparts. • Importance of combined fatigue and corrosion action on device reliability.

The Integration of Bacteriorhodopsin Proteins with Semiconductor Heterostructure Devices

Science.gov (United States)

Xu, Jian

2008-03-01

Bioelectronics has emerged as one of the most rapidly developing fields among the active frontiers of interdisciplinary research. A major thrust in this field is aimed at the coupling of the technologically-unmatched performance of biological systems, such as neural and sensing functions, with the well developed technology of microelectronics and optoelectronics. To this end we have studied the integration of a suitably engineered protein, bacteriorhodopsin (BR), with semiconductor optoelectronic devices and circuits. Successful integration will potentially lead to ultrasensitive sensors with polarization selectivity and built-in preprocessing capabilities that will be useful for high speed tracking, motion and edge detection, biological detection, and artificial vision systems. In this presentation we will summarize our progresses in this area, which include fundamental studies on the transient dynamics of photo-induced charge shift in BR and the coupling mechanism at protein-semiconductor interface for effective immobilizing and selectively integrating light sensitive proteins with microelectronic devices and circuits, and the device engineering of BR-transistor-integrated optical sensors as well as their applications in phototransceiver circuits. Work done in collaboration with Pallab Bhattacharya, Jonghyun Shin, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI; Robert R. Birge, Department of Chemistry, University of Connecticut, Storrs, CT 06269; and György V'ar'o, Institute of Biophysics, Biological Research Center of the Hungarian Academy of Science, H-6701 Szeged, Hungary.

Optoelectronics circuits manual

CERN Document Server

Marston, R M

2013-01-01

Optoelectronics Circuits Manual covers the basic principles and characteristics of the best known types of optoelectronic devices, as well as the practical applications of many of these optoelectronic devices. The book describes LED display circuits and LED dot- and bar-graph circuits and discusses the applications of seven-segment displays, light-sensitive devices, optocouplers, and a variety of brightness control techniques. The text also tackles infrared light-beam alarms and multichannel remote control systems. The book provides practical user information and circuitry and illustrations.

Organic optoelectronics

CERN Document Server

Hu, Wenping; Gong, Xiong; Zhan, Xiaowei; Fu, Hongbing; Bjornholm, Thomas

2012-01-01

Written by internationally recognized experts in the field with academic as well as industrial experience, this book concisely yet systematically covers all aspects of the topic.The monograph focuses on the optoelectronic behavior of organic solids and their application in new optoelectronic devices. It covers organic electroluminescent materials and devices, organic photonics, materials and devices, as well as organic solids in photo absorption and energy conversion. Much emphasis is laid on the preparation of functional materials and the fabrication of devices, from materials synthesis a

Modelling of optoelectronic circuits based on resonant tunneling diodes

Science.gov (United States)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Si light-emitting device in integrated photonic CMOS ICs

Science.gov (United States)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

A Novel Optoelectronic Device Based on Correlated Two-Dimensional Fermions

Science.gov (United States)

Dianat, Pouya

Conventional metallic contacts can be replicated by quantum two dimensional charge (of Fermion) systems (2DFS). Unlike metals, the particle concentration of these "unconventional" systems can be accurately controlled in an extensive range and by means of external electronic or optical stimuli. A 2DFS can, hence, transition from a high-density kinetic liquid into a dilute-but highly correlated-gas state, in which inter-particle Coulombic interactions are significant. Such interactions contribute negatively, by so-called exchange-correlation energies, to the overall energetics of the system, and are manifested as a series negative quantum capacitance. This dissertation investigates the capacitive performance of a class of unconventional devices based on a planar metal-semiconductor-metal structure with an embedded 2DFS. They constitute an opto-electronically controlled variable capacitor, with record breaking figures-of-merit in capacitance tuning ranges of up to 7000 and voltage sensitivities as large as 400. Internal eld manipulations by localized depletion of a dense 2DFS account for the enlarged maximum and reduced minimum capacitances. The capacitance-voltage characteristics of these devices incur an anomalous "Batman" shape capacitance enhancement (CE) of up to 200% that may be triggered optically. The CE is attributed to the release and storage of exchange-correlation energies; from the "unconventional" plate and in the dielectric, respectively. This process is enforced by density manipulation of the 2DFS by a hybrid of an external eld and light-generated carriers. Under moderate optical powers, the capacitance becomes 43 times greater than the dark value; thus a new capacitance-based photodetection method is offered. This new capacitance based photodetection method has a range of applications in optoelectronics, particularly in the next generation of photonic integrated systems.

Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

KAUST Repository

Catrysse, Peter B.; Fan, Shanhui

2010-01-01

We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from

Optoelectronic device for the measurement of the absolute linear position in the micrometric displacement range

Science.gov (United States)

Morlanes, Tomas; de la Pena, Jose L.; Sanchez-Brea, Luis M.; Alonso, Jose; Crespo, Daniel; Saez-Landete, Jose B.; Bernabeu, Eusebio

2005-07-01

In this work, an optoelectronic device that provides the absolute position of a measurement element with respect to a pattern scale upon switch-on is presented. That means that there is not a need to perform any kind of transversal displacement after the startup of the system. The optoelectronic device is based on the process of light propagation passing through a slit. A light source with a definite size guarantees the relation of distances between the different elements that constitute our system and allows getting a particular optical intensity profile that can be measured by an electronic post-processing device providing the absolute location of the system with a resolution of 1 micron. The accuracy of this measuring device is restricted to the same limitations of any incremental position optical encoder.

Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

Science.gov (United States)

Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

2014-02-21

The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

Wonder of nanotechnology quantum optoelectronic devices and applications

CERN Document Server

Razeghi, Manijeh; von Klitzing, Klaus

2013-01-01

When you look closely, Nature is nanotechnology at its finest. From a single cell, a factory all by itself, to complex systems, such as the nervous system or the human eye, each is composed of specialized nanostructures that exist to perform a specific function. This same beauty can be mirrored when we interact with the tiny physical world that is the realm of quantum mechanics.The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, edited by Manijeh Razeghi, Leo Esaki, and Klaus von Klitzing focuses on the application of nanotechnology to modern semiconductor optoelectr

CuPc/C60 heterojunction thin film optoelectronic devices

International Nuclear Information System (INIS)

Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

2010-01-01

The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

International Nuclear Information System (INIS)

Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

2010-01-01

Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

Transferable, conductive TiO{sub 2} nanotube membranes for optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Liu, Guohua [School of Energy and Environment, Anhui University of Technology, Maanshan 243002 (China); Department of Micro and Nano Systems Technology, Vestfold University College, Horten 3184 (Norway); Chen, Ting [School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275 (China); Sun, Yunlan; Chen, Guang [School of Energy and Environment, Anhui University of Technology, Maanshan 243002 (China); Wang, Kaiying, E-mail: Kaiying.Wang@hbv.no [Department of Micro and Nano Systems Technology, Vestfold University College, Horten 3184 (Norway)

2014-08-30

Graphical abstract: An optoelectronic device with vertical architecture offers straight conducting filaments for electron transportation. - Highlights: • Highly porous TiO{sub 2} nanotube membranes are prepared by two-step anodization. • An optoelectronic device is integrated with photocurrent transportation along the nanotube axial. • Straight conducting nano-filaments are beneficial for electron transportation. • Photoconductive performances are demonstrated under front/back-illumination. - Abstract: We report a facile approach for preparing free-standing and crystalline TiO{sub 2} nanotube membranes (TNMs) by taking advantage of differential mechanical stress between two anodic layers. The membrane exhibits visible light transmittance (∼40%) and UV absorption (∼99%) with good flexibility, which is favorable to integrate with substrates in optoelectronics. A sandwich-type device is assembled through stacking the membrane and substrates. The dependence of current-perpendicular-to-membrane vs applied voltage shows a remarkable photoconductive performance for both front and back illumination. The photocurrent value increases ∼2 or 3 orders magnitude under UV light radiation as compared to that in darkness. The photoresponse is arisen from high internal gain caused by hole trapping along the nanotube walls. This work is crucial for understanding intrinsic optical properties of nanostructured membranes.

Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

International Nuclear Information System (INIS)

Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

1999-01-01

Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale

KAUST Repository

Kumar, Naresh

2017-01-12

Novel optoelectronic devices rely on complex nanomaterial systems where the nanoscale morphology and local chemical composition are critical to performance. However, the lack of analytical techniques that can directly probe these structure-property relationships at the nanoscale presents a major obstacle to device development. In this work, we present a novel method for non-destructive, simultaneous mapping of the morphology, chemical composition and photoelectrical properties with <20 nm spatial resolution by combining plasmonic optical signal enhancement with electrical-mode scanning probe microscopy. We demonstrate that this combined approach offers subsurface sensitivity that can be exploited to provide molecular information with a nanoscale resolution in all three spatial dimensions. By applying the technique to an organic solar cell device, we show that the inferred surface and subsurface composition distribution correlates strongly with the local photocurrent generation and explains macroscopic device performance. For instance, the direct measurement of fullerene phase purity can distinguish between high purity aggregates that lead to poor performance and lower purity aggregates (fullerene intercalated with polymer) that result in strong photocurrent generation and collection. We show that the reliable determination of the structure-property relationship at the nanoscale can remove ambiguity from macroscopic device data and support the identification of the best routes for device optimisation. The multi-parameter measurement approach demonstrated herein is expected to play a significant role in guiding the rational design of nanomaterial-based optoelectronic devices, by opening a new realm of possibilities for advanced investigation via the combination of nanoscale optical spectroscopy with a whole range of scanning probe microscopy modes.

Lasers and optoelectronics fundamentals, devices and applications

CERN Document Server

Maini, Anil K

2013-01-01

With emphasis on the physical and engineering principles, this book provides a comprehensive and highly accessible treatment of modern lasers and optoelectronics. Divided into four parts, it explains laser fundamentals, types of lasers, laser electronics & optoelectronics, and laser applications, covering each of the topics in their entirety, from basic fundamentals to advanced concepts. Key features include: exploration of technological and application-related aspects of lasers and optoelectronics, detailing both existing and emerging applications in industry, medical diag

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin

2016-09-06

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

KAUST Repository

Eita, Mohamed S.

2016-08-04

An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

Electronic and optoelectronic materials and devices inspired by nature

Science.gov (United States)

Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

2013-03-01

Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

Optical modeling based on mean free path calculations for quantum dot phosphors applied to optoelectronic devices.

Science.gov (United States)

Shin, Min-Ho; Kim, Hyo-Jun; Kim, Young-Joo

2017-02-20

We proposed an optical simulation model for the quantum dot (QD) nanophosphor based on the mean free path concept to understand precisely the optical performance of optoelectronic devices. A measurement methodology was also developed to get the desired optical characteristics such as the mean free path and absorption spectra for QD nanophosphors which are to be incorporated into the simulation. The simulation results for QD-based white LED and OLED displays show good agreement with the experimental values from the fabricated devices in terms of spectral power distribution, chromaticity coordinate, CCT, and CRI. The proposed simulation model and measurement methodology can be applied easily to the design of lots of optoelectronics devices using QD nanophosphors to obtain high efficiency and the desired color characteristics.

Optoelectronic Mounting Structure

Science.gov (United States)

Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

2004-10-05

An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Science.gov (United States)

2013-03-14

... Fiber Optic Communications, Components Thereof, and Products Containing Same; Commission Determination... United States after importation of certain optoelectronic devices for fiber optic communications... Fiber IP (Singapore) Pte. Ltd. of Singapore (``Avago Fiber IP''); Avago General IP and Avago...

Electronic and optoelectronic materials and devices inspired by nature

International Nuclear Information System (INIS)

Meredith, P; Schwenn, P E; Bettinger, C J; Irimia-Vladu, M; Mostert, A B

2013-01-01

Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist. (review article)

78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Science.gov (United States)

2013-12-20

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-860] Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY...

RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

International Nuclear Information System (INIS)

Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan; Lantz, Kevin R.

2012-01-01

Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this work will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.

Organic 'Plastic' Optoelectronic Devices

International Nuclear Information System (INIS)

Sariciftci, N.S.

2006-01-01

Recent developments on conjugated polymer based photovoltaic diodes and photoactive organic field effect transistors (photOFETs) are discussed. The photophysics of such devices is based on the photoinduced charge transfer from donor type semiconducting conjugated polymers onto acceptor type conjugated polymers or acceptor molecules such as Buckminsterfullerene, C 6 0. Potentially interesting applications include sensitization of the photoconductivity and photovoltaic phenomena as well as photoresponsive organic field effect transistors (photOFETs). Furthermore, organic polymeric/inorganic nanoparticle based 'hybrid' solar cells will be discussed. This talk gives an overview of materials' aspect, charge-transport, and device physics of organic diodes and field-effect transistors. Furthermore, due to the compatibility of carbon/hydrogen based organic semiconductors with organic biomolecules and living cells there can be a great opportunity to integrate such organic semiconductor devices (biOFETs) with the living organisms. In general the largely independent bio/lifesciences and information technology of today, can be thus bridged in an advanced cybernetic approach using organic semiconductor devices embedded in bio-lifesciences. This field of bio-organic electronic devices is proposed to be an important mission of organic semiconductor devices

Organic optoelectronic materials

CERN Document Server

Li, Yongfang

2015-01-01

This volume reviews the latest trends in organic optoelectronic materials. Each comprehensive chapter allows graduate students and newcomers to the field to grasp the basics, whilst also ensuring that they have the most up-to-date overview of the latest research. Topics include: organic conductors and semiconductors; conducting polymers and conjugated polymer semiconductors, as well as their applications in organic field-effect-transistors; organic light-emitting diodes; and organic photovoltaics and transparent conducting electrodes. The molecular structures, synthesis methods, physicochemical and optoelectronic properties of the organic optoelectronic materials are also introduced and described in detail. The authors also elucidate the structures and working mechanisms of organic optoelectronic devices and outline fundamental scientific problems and future research directions. This volume is invaluable to all those interested in organic optoelectronic materials.

Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

International Nuclear Information System (INIS)

Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

2017-01-01

Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices †

KAUST Repository

Beljonne, David; Cornil, Jérôme; Muccioli, Luca; Zannoni, Claudio; Brédas, Jean-Luc; Castet, Frédéric

2011-01-01

We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational

Perovskite Materials: Solar Cell and Optoelectronic Applications

Energy Technology Data Exchange (ETDEWEB)

Yang, Bin [ORNL; Geohegan, David B [ORNL; Xiao, Kai [ORNL

2017-01-01

Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

Directory of Open Access Journals (Sweden)

Eng Png Ching

2015-01-01

Full Text Available Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc. and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

Optimization of light out-coupling in optoelectronic devices using nanostructured surface

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

C and GaN, these developed methods could be applied to other semicon ductors such as Si, etc. Furthermore, all optoelectronic devices having an optical interface such as solar cells, photo - detectors, could benefit from these developed methods for opto - electronic performance improvement....... the overall efficiency of the LEDs. In this paper we have developed various methods for two important semiconductors: silicon carbide (SiC) and gallium nitride (GaN), and demonstrated enormous extraction efficiency enhancement. SiC is an important su bstrate for LED devices. It has refractive index of 2.......6, and only a few percent of light could escape from it. We have developed periodic nanocone structures by using electron - beam lithography, periodic nanodome structures by using nanosphere lithography, random nanostructures by using self - assembled metal nanoparticles, and random nanostructures by directly...

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

International Nuclear Information System (INIS)

Schulze, J.; Oehme, M.; Werner, J.

2012-01-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

Energy Technology Data Exchange (ETDEWEB)

Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

2012-02-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

Plasmonic Waveguide-Integrated Nanowire Laser

DEFF Research Database (Denmark)

Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

2017-01-01

Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technolog......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...... technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic...

Nano crystals for Electronic and Optoelectronic Applications

International Nuclear Information System (INIS)

Zhu, T.; Cloutier, S.G.; Ivanov, I; Knappenberger Jr, K.L.; Robel, I.; Zhang, F

2012-01-01

Electronic and optoelectronic devices, from computers and smart cell phones to solar cells, have become a part of our life. Currently, devices with featured circuits of 45 nm in size can be fabricated for commercial use. However, further development based on traditional semiconductor is hindered by the increasing thermal issues and the manufacturing cost. During the last decade, nano crystals have been widely adopted in various electronic and optoelectronic applications. They provide alternative options in terms of ease of processing, low cost, better flexibility, and superior electronic/optoelectronic properties. By taking advantage of solution-processing, self-assembly, and surface engineering, nano crystals could serve as new building blocks for low-cost manufacturing of flexible and large area devices. Tunable electronic structures combined with small exciton binding energy, high luminescence efficiency, and low thermal conductivity make nano crystals extremely attractive for FET, memory device, solar cell, solid-state lighting/display, photodetector, and lasing applications. Efforts to harness the nano crystal quantum tunability have led to the successful demonstration of many prototype devices, raising the public awareness to the wide range of solutions that nano technology can provide for an efficient energy economy. This special issue aims to provide the readers with the latest achievements of nano crystals in electronic and optoelectronic applications, including the synthesis and engineering of nano crystals towards the applications and the corresponding device fabrication, characterization and computer modeling.

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Bingqi Sun

2018-06-01

Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

Semiconductor opto-electronics

CERN Document Server

Moss, TS; Ellis, B

1972-01-01

Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

KAUST Repository

Catrysse, Peter B.

2010-08-11

We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from that of optically thick metallic films. We analyze the optical properties when performing a geometrical transformation that maintains the electrical properties. For one-dimensional patterns of metallic wires, the analysis favors tall and narrow wires. Our design principles remain valid for oblique incidence and readily carry over to two-dimensional patterns. © 2010 American Chemical Society.

Synthesis and optoelectronic properties of oxadiazole-functionalized iridium complexes in the poly(vinylcarbazole)-hosted devices

International Nuclear Information System (INIS)

Wu Zhonglian; Luo Cuiping; Jiang Changyun; Zhu Meixiang; Cao, Yong; Zhu Weiguo

2008-01-01

A class of oxadiazole-functionalized iridium complexes was used as phosphor emitters in poly (vinylcarbazole)-hosted devices. Efficient green electrophosphorescences were achieved in the devices with a maximum luminance efficiency of 9.3 cd/A at 10.6 mA/cm 2 and brightness of 3882 cd/m 2 at 92.1 mA/cm 2 . More importantly, the iridium complexes-doped devices exhibited a low turn-on voltage of 7.0 V and an applied voltage of 9.2 V at 500 cd/m 2 . The good optoelectronic properties of the complexes were attributed to the enhanced electron-injection and transport properties resulting from the effect of oxadiazole ligands in the complexes

Telemedicine optoelectronic biomedical data processing system

Science.gov (United States)

Prosolovska, Vita V.

2010-08-01

The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

Adaptive integral backstepping sliding mode control for opto-electronic tracking system based on modified LuGre friction model

Science.gov (United States)

Yue, Fengfa; Li, Xingfei; Chen, Cheng; Tan, Wenbin

2017-12-01

In order to improve the control accuracy and stability of opto-electronic tracking system fixed on reef or airport under friction and external disturbance conditions, adaptive integral backstepping sliding mode control approach with friction compensation is developed to achieve accurate and stable tracking for fast moving target. The nonlinear observer and slide mode controller based on modified LuGre model with friction compensation can effectively reduce the influence of nonlinear friction and disturbance of this servo system. The stability of the closed-loop system is guaranteed by Lyapunov theory. The steady-state error of the system is eliminated by integral action. The adaptive integral backstepping sliding mode controller and its performance are validated by a nonlinear modified LuGre dynamic model of the opto-electronic tracking system in simulation and practical experiments. The experiment results demonstrate that the proposed controller can effectively realise the accuracy and stability control of opto-electronic tracking system.

Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

Science.gov (United States)

Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

2014-04-01

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Research on the application of optoelectronics to nuclear power plants

International Nuclear Information System (INIS)

Shirosaki, Hidekazu; Mitsuda, Hiromichi; Kurata, Toshikazu; Soramoto, Seiki; Maekawa, Tatsuyuki.

1995-01-01

Optoelectronics, which is based on technologies such as laser diodes and optical fibers, is approaching the realm of practical application in the fields of optical fiber communications and compact disks etc,. In addition, laser enrichment, a type of uranium enrichment technique used in the nuclear field, can also be regarded as a product of optoelectronics. Application of optoelectronics in a wide range of fields is likely to continue in the future, and research is being conducted on coherent optical communication, optical integrated circuits, optical computers and other subjects in hopes of attaining practical application of these technologies in the future. On the other hand, digital control equipment and other related devices have been installed and data transfer using optical fibers has been implemented on a partial basis at nuclear power plants, and optoelectronics is anticipated to be applied on an even broader scale in the future, thereby creating the potential for improving plant reliability. In this research, we conducted an investigative study of technologies relating to optoelectronics, and proposed a remote monitoring system for manually operated valves that employs optical switches. Moreover, we conducted theoretical verification tests on the proposed system and carried out a feasibility study relating to application to nuclear power plants. As a result, the proposed system was found to be effective, and confirmed to have the potential of realization as a valve switching monitoring system. (author)

A hybrid lightwave transmission system based on light injection/optoelectronic feedback techniques and fiber-VLLC integration

International Nuclear Information System (INIS)

Tsai, Wen-Shing; Lu, Hai-Han; Li, Chung-Yi; Chen, Bo-Rui; Lin, Hung-Hsien; Lin, Dai-Hua

2016-01-01

A hybrid lightwave transmission system based on light injection/optoelectronic feedback techniques and fiber-visible laser light communication (VLLC) integration is proposed and experimentally demonstrated. To be the first one of its kind in employing light injection and optoelectronic feedback techniques in a fiber-VLLC integration lightwave transmission system, the light is successfully directly modulated with Community Access Television (CATV), 16-QAM, and 16-QAM-OFDM signals. Over a 40 km SMF and a 10 m free-space VLLC transport, good performances of carrier-to-noise ratio (CNR)/composite second-order (CSO)/composite triple-beat (CTB)/bit error rate (BER) are achieved for CATV/16-QAM/16-QAM-OFDM signals transmission. Such a hybrid lightwave transmission system would be very useful since it can provide broadband integrated services including CATV, Internet, and telecommunication services over both distribute fiber and in-building networks. (letter)

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

Directory of Open Access Journals (Sweden)

Xianshu eLuo

2015-04-01

Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

Ligand removal and photo-activation of CsPbBr3 quantum dots for enhanced optoelectronic devices.

Science.gov (United States)

Moyen, Eric; Kanwat, Anil; Cho, Sinyoung; Jun, Haeyeon; Aad, Roy; Jang, Jin

2018-05-10

Perovskite quantum dots have recently emerged as a promising light source for optoelectronic applications. However, integrating them into devices while preserving their outstanding optical properties remains challenging. Due to their ionic nature, perovskite quantum dots are extremely sensitive and degrade on applying the simplest processes. To maintain their colloidal stability, they are surrounded by organic ligands; these prevent efficient charge carrier injection in devices and have to be removed. Here we report on a simple method, where a moderate thermal process followed by exposure to UV in air can efficiently remove ligands and increase the photo-luminescence of the room temperature synthesized perovskite quantum dot thin films. Annealing is accompanied by a red shift of the emission wavelength, usually attributed to the coalescence and irreversible degradation of the quantum dots. We show that it is actually related to the relaxation of the quantum dots upon the ligand removal, without the creation of non-radiative recombining defects. The quantum dot surface, as devoid of ligands, is subsequently photo-oxidized and smoothened upon exposure to UV in air, which drastically enhances their photo-luminescence. This adequate combination of treatments improves by more than an order of magnitude the performances of perovskite quantum dot light emitting diodes.

Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

KAUST Repository

Wan, Shanhong

2015-01-01

A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

Mid-infrared Semiconductor Optoelectronics

CERN Document Server

Krier, Anthony

2006-01-01

The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) wavelength range offers potential applications in a variety of areas from environmental gas monitoring around oil rigs and landfill sites to the detection of pharmaceuticals, particularly narcotics. In addition, an atmospheric transmission window exists between 3 µm and 5 µm that enables free-space optical communications, thermal imaging applications and the development of infrared measures for "homeland security". Consequently, the mid-infrared is very attractive for the development of sensitive optical sensor instrumentation. Unfortunately, the nature of the likely applications dictates stringent requirements in terms of laser operation, miniaturisation and cost that are difficult to meet. Many of the necessary improvements are linked to a better ability to fabricate and to understand the optoelectronic properties of suitable high-quality epitaxial materials and device structures. Substantial progress in these m...

Heterostructures and quantum devices

CERN Document Server

Einspruch, Norman G

1994-01-01

Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

Nanocellulose-based Translucent Diffuser for Optoelectronic Device Applications with Dramatic Improvement of Light Coupling.

Science.gov (United States)

Wu, Wei; Tassi, Nancy G; Zhu, Hongli; Fang, Zhiqiang; Hu, Liangbing

2015-12-09

Nanocellulose is a biogenerated and biorenewable organic material. Using a process based on 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO)/NaClO/NaBr system, a highly translucent and light-diffusive film consisting of many layers of nanocellulose fibers and wood pulp microfibers was made. The film demonstrates a combination of large optical transmittance of ∼90% and tunable diffuse transmission of up to ∼78% across the visible and near-infrared spectra. The detailed characterizations of the film indicate the combination of high optical transmittance and haze is due to the film's large packing density and microstructured surface. The superior optical properties make the film a translucent light diffuser and applicable for improving the efficiencies of optoelectronic devices such as thin-film silicon solar cells and organic light-emitting devices.

Optoelectronic properties of four azobenzene-based iminopyridine ligands for photovoltaic application

Directory of Open Access Journals (Sweden)

Aziz El alamy

2017-11-01

Full Text Available Because of organic π-conjugated materials’ optoelectronic properties and potential applications in a wide range of electronic and optoelectronic devices, such as organic solar cells, these materials, including both polymers and oligomers, have been widely studied in recent years. This work reposts a theoretical study using the DFT method on four azobenzene-based iminopyridines. The theoretical ground-state geometry, electronic structure and optoelectronic parameters (highest occupied molecular orbital (HOMO, lowest unoccupied molecular orbital (LUMO energy levels, open-circuit voltage (Voc and oscillator strengths (O.S of the studied molecules were obtained using the density functional theory (DFT and time-dependent (TDDFT approaches. The effects of the structure length and substituents on the geometric and optoelectronic properties of these materials are discussed to investigate the relationship between the molecular structure and the optoelectronic properties. The results of this study are consistent with the experimental ones and suggest that these materials as good candidates for use in photovoltaic devices. Keywords: π-conjugated materials, azobenzene, optoelectronic properties, DFT calculations, HOMO-LUMO gap

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Electronic and optoelectronic device applications based on ReS2

Science.gov (United States)

Liu, Erfu; Long, Mingsheng; Wang, Yaojia; Pan, Yiming; Ho, Chinghwa; Wang, Baigeng; Miao, Feng

Rhenium disulfide (ReS2) is a unique semiconducting TMD with distorted 1T structure and weak interlayer coupling. We have previously investigated its in-plane anisotropic property and electronic applications on FET and digital inverters. In this talk, we will present high responsivity phototransistors based on few-layer ReS2. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is one of the highest value among individual two-dimensional materials with similar device structures. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. The existence of trap states is proved by temperature dependent transport measurements. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future electronic and sensitive optoelectronic applications.

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

KAUST Repository

Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T; Lonergan, Mark C; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali

2016-01-01

The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

KAUST Repository

Wang, Hsin-Ping

2016-06-08

The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

Dental impression technique using optoelectronic devices

Science.gov (United States)

Sinescu, Cosmin; Barua, Souman; Topala, Florin Ionel; Negrutiu, Meda Lavinia; Duma, Virgil-Florin; Gabor, Alin Gabriel; Zaharia, Cristian; Bradu, Adrian; Podoleanu, Adrian G.

2018-03-01

INTRODUCTION: The use of Optical Coherence Tomography (OCT) as a non-invasive and high precision quantitative information providing tool has been well established by researches within the last decade. The marginal discrepancy values can be scrutinized in optical biopsy made in three dimensional (3D) micro millimetre scale and reveal detailed qualitative and quantitative information of soft and hard tissues. OCT-based high resolution 3D images can provide a significant impact on finding recurrent caries, restorative failure, analysing the precision of crown preparation, and prosthetic elements marginal adaptation error with the gingiva and dental hard tissues. During the CAD/CAM process of prosthodontic restorations, the circumvent of any error is important for the practitioner and the technician to reduce waste of time and material. Additionally, OCT images help to achieve a new or semi-skilled practitioner to analyse their crown preparation works and help to develop their skills faster than in a conventional way. The aim of this study is to highlight the advantages of OCT in high precision prosthodontic restorations. MATERIALS AND METHODS: 25 preparations of frontal and lateral teeth were performed for 7 different patients. The impressions of the prosthetic fields were obtained both using a conventional optoelectronic system (Apolo Di, Syrona) and a Spectral Domain using OCT (Dental prototype, working at 860 nm). For the conventional impression technique the preparation margins were been prelevated by gingival impregnated cords. No specific treatments were performed by the OCT impression technique. RESULTS: The scanning performed by conventional optoelectronic system proved to be quick and accurate in terms of impression technology. The results were represented by 3D virtual models obtained after the scanning procedure was completed. In order to obtain a good optical impression a gingival retraction cord was inserted between the prepared tooth and the gingival

One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application

Science.gov (United States)

Luo, Lin-Bao; Wang, Xian-He; Xie, Chao; Li, Zhong-Jun; Lu, Rui; Yang, Xiao-Bao; Lu, Jian

2014-11-01

In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 [InlineEquation not available: see fulltext.] 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm2V-1 s-1 and hole concentration of 1.34 × 1018 cm-3, respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 102 A W-1, 3.95 × 102 and 6.38 × 1011 cm Hz1/2 W-1, respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices.

Metal Complexes for Organic Optoelectronic Applications

Science.gov (United States)

Huang, Liang

Organic optoelectronic devices have drawn extensive attention by over the past two decades. Two major applications for Organic optoelectronic devices are efficient organic photovoltaic devices(OPV) and organic light emitting diodes (OLED). Organic Solar cell has been proven to be compatible with the low cost, large area bulk processing technology and processed high absorption efficiencies compared to inorganic solar cells. Organic light emitting diodes are a promising approach for display and solid state lighting applications. To improve the efficiency, stability, and materials variety for organic optoelectronic devices, several emissive materials, absorber-type materials, and charge transporting materials were developed and employed in various device settings. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. In this thesis, Chapter 1 provides an introduction to the background knowledge of OPV and OLED research fields presented. Chapter 2 discusses new porphyrin derivatives- azatetrabenzylporphyrins for OPV and near infrared OLED applications. A modified synthetic method is utilized to increase the reaction yield of the azatetrabenzylporphyrin materials and their photophysical properties, electrochemical properties are studied. OPV devices are also fabricated using Zinc azatetrabenzylporphyrin as donor materials. Pt(II) azatetrabenzylporphyrin were also synthesized and used in near infra-red OLED to achieve an emission over 800 nm with reasonable external quantum efficiencies. Chapter 3, discusses the synthesis, characterization, and device evaluation of a series of tetradentate platinum and palladium complexesfor single doped white OLED applications and RGB white OLED applications. Devices employing some of the developed emitters demonstrated impressively high external quantum efficiencies within the range of 22%-27% for various emitter concentrations. And the palladium complex, i

Plasmonic Waveguide-Integrated Nanowire Laser

DEFF Research Database (Denmark)

Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

2017-01-01

technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...

Physics of photonic devices

CERN Document Server

Chuang, Shun Lien

2009-01-01

The most up-to-date book available on the physics of photonic devices This new edition of Physics of Photonic Devices incorporates significant advancements in the field of photonics that have occurred since publication of the first edition (Physics of Optoelectronic Devices). New topics covered include a brief history of the invention of semiconductor lasers, the Lorentz dipole method and metal plasmas, matrix optics, surface plasma waveguides, optical ring resonators, integrated electroabsorption modulator-lasers, and solar cells. It also introduces exciting new fields of research such as:

Electron microscopy study of advanced heterostructures for optoelectronics

NARCIS (Netherlands)

Katcki, J.; Ratajczak, J.; Phillipp, F.; Muszalski, J.; Bugajski, M.; Chen, J.X.; Fiore, A.

2003-01-01

The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots,

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

Science.gov (United States)

Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

2017-12-04

High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

The Cellulose Nanofibers for Optoelectronic Conversion and Energy Storage

Directory of Open Access Journals (Sweden)

Yongfeng Luo

2014-01-01

Full Text Available Cellulose widely exists in plant tissues. Due to the large pores between the cellulose units, the regular paper is nontransparent that cannot be used in the optoelectronic devices. But some chemical and physical methods such as 2,2,6,6-tetramethylpiperidine-1-oxyl radical (TEMPO oxidation can be used to improve the pores scale between the cellulose units to reach nanometer level. The cellulose nanofibers (CNFs have good mechanical strength, flexibility, thermostability, and low thermal expansion. The paper made of these nanofibers represent a kind of novel nanostructured material with ultrahigh transparency, ultrahigh haze, conductivity, biodegradable, reproducible, low pollution, environment friendly and so on. These advantages make the novel nanostructured paper apply in the optoelectronic device possible, such as electronics energy storage devices. This kind of paper is considered most likely to replace traditional materials like plastics and glass, which is attracting widespread attention, and the related research has also been reported. The purpose of this paper is to review CNFs which are applied in optoelectronic conversion and energy storage.

Light Management in Optoelectronic Devices with Disordered and Chaotic Structures

KAUST Repository

Khan, Yasser

2012-07-01

With experimental realization, energy harvesting capabilities of chaotic microstructures were explored. Incident photons falling into chaotic trajectories resulted in energy buildup for certain frequencies. As a consequence, many fold enhancement in light trapping was observed. These ellipsoid like chaotic microstructures demonstrated 25% enhancement in light trapping at 450nm excitation and 15% enhancement at 550nm excitation. Optimization of these structures can drive novel chaos-assisted energy harvesting systems. In subsequent sections of the thesis, prospect of broadband light extraction from white light emitting diodes were investigated, which is an unchallenged but quintessential problem in solid-state lighting. Size dependent scattering allows microstructures to interact strongly with narrow-band light. If disorder is introduced in spread and sizes of microstructures, broadband light extraction is possible. A novel scheme with Voronoi tessellation to quantify disorder in physical systems was also introduced, and a link between voronoi disorder and state disorder of statistical mechanics was established. Overall, in this thesis some nascent concepts regarding disorder and chaos were investigated to efficiently manage electromagnetic waves in optoelectronic devices.

Fused thiophene-based conjugated polymers and their use in optoelectronic devices

Science.gov (United States)

Facchetti, Antonio; Marks, Tobin J.; Takai, Atsuro; Seger, Mark; Chen; , Zhihua

2017-07-18

The present teachings relate to polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds generally include as repeating units at least one annulated thienyl-vinylene-thienyl (TVT) unit and at least one other pi-conjugated unit. The annulated TVT unit can be represented by the formula: ##STR00001## where Cy.sup.1 and Cy.sup.2 can be a five- or six-membered carbocyclic ring. The annulated TVT unit can be optionally substituted at any available ring atom(s), and can be covalently linked to the other pi-conjugated unit via either the thiophene rings or the carbocyclic rings Cy.sup.1 and Cy.sup.2. The other pi-conjugated unit can be a conjugated linear linker including one or more unsaturated bonds, or a conjugated cyclic linker including one or more carbocyclic and/or heterocyclic rings.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

Science.gov (United States)

Moustakas, Theodore D.; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

GaAs optoelectronic neuron arrays

Science.gov (United States)

Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

1993-01-01

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

Science.gov (United States)

Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

2018-06-21

Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

Tungsten oxides as interfacial layers for improved performance in hybrid optoelectronic devices

International Nuclear Information System (INIS)

Vasilopoulou, M.; Palilis, L.C.; Georgiadou, D.G.; Argitis, P.; Kennou, S.; Kostis, I.; Papadimitropoulos, G.; Stathopoulos, N.A.; Iliadis, A.A.; Konofaos, N.; Davazoglou, D.; Sygellou, L.

2011-01-01

Tungsten oxide (WO 3 ) films with thicknesses ranging from 30 to 100 nm were grown by Hot Filament Vapor Deposition (HFVD). Films were studied by X-Ray Photoemission Spectroscopy (XPS) and were found to be stoichiometric. The surface morphology of the films was characterized by Atomic Force Microscopy (AFM). Samples had a granular form with grains in the order of 100 nm. The surface roughness was found to increase with film thickness. HFVD WO 3 films were used as conducting interfacial layers in advanced hybrid organic-inorganic optoelectronic devices. Hybrid-Organic Light Emitting Diodes (Hy-OLEDs) and Organic Photovoltaics (Hy-OPVs) were fabricated with these films as anode and/or as cathode interfacial conducting layers. The Hy-OLEDs showed significantly higher current density and a lower turn-on voltage when a thin WO 3 layer was inserted at the anode/polymer interface, while when inserted at the cathode/polymer interface the device performance was found to deteriorate. The improvement was attributed to a more efficient hole injection and transport from the Fermi level of the anode to the Highest Occupied Molecular Orbital (HOMO) of a yellow emitting copolymer (YEP). On the other hand, the insertion of a thin WO 3 layer at the cathode/polymer interface of Hy-OPV devices based on a polythiophene-fullerene bulk-heterojunction blend photoactive layer resulted in an increase of the produced photogenerated current, more likely due to improved electron extraction at the Al cathode.

Electroactive and Optoelectronically Active Graphene Nanofilms

DEFF Research Database (Denmark)

Chi, Qijin

As an atomic-scale-thick two-dimensional material, graphene has emerged as one of the most miracle materials and has generated intensive interest in physics, chemistry and even biology in the last decade [1, 2]. Nanoscale engineering and functionalization of graphene is a crucial step for many...... applications ranging from catalysis, electronic devices, sensors to advanced energy conversion and storage [3]. This talk highlights our recent studies on electroactive and optoelectronically active graphene ultrathin films for chemical sensors and energy technology. The presentation includes a general theme...... for functionalization of graphene nanosheets, followed by showing several case studies. Our systems cover redox-active nanoparticles, electroactive supramolecular ensembles and redox enzymes which are integrated with graphene nanosheets as building blocks for the construction of functional thin films or graphene papers....

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

Science.gov (United States)

Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

2010-05-20

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

Advances in graphene-based optoelectronics, plasmonics and photonics

International Nuclear Information System (INIS)

Nguyen, Bich Ha; Nguyen, Van Hieu

2016-01-01

Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented. (review)

Transparent Electrodes for Efficient Optoelectronics

KAUST Repository

Morales-Masis, Monica

2017-03-30

With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

Transparent Electrodes for Efficient Optoelectronics

KAUST Repository

Morales-Masis, Monica; De Wolf, Stefaan; Woods-Robinson, Rachel; Ager, Joel W.; Ballif, Christophe

2017-01-01

With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

Integrated control rod monitoring device

International Nuclear Information System (INIS)

Saito, Katsuhiro

1997-01-01

The present invention provides a device in which an entire control rod driving time measuring device and a control rod position support device in a reactor building and a central control chamber are integrated systematically to save hardwares such as a signal input/output device and signal cables between boards. Namely, (1) functions of the entire control rod driving time measuring device for monitoring control rods which control the reactor power and a control rod position indication device are integrated into one identical system. Then, the entire devices can be made compact by the integration of the functions. (2) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated in a central operation board and a board in the site. Then, the place for the installation of them can be used in common in any of the cases. (3) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated to one identical system to save hardware to be used. Then, signal input/output devices and drift branching panel boards in the site and the central operation board can be saved, and cables for connecting both of the boards is no more necessary. (I.S.)

A spin-optoelectronic detector for the simultaneous measurement of the degree of circular polarization and intensity of a laser beam

International Nuclear Information System (INIS)

Khamari, Shailesh K.; Porwal, S.; Oak, S. M.; Sharma, T. K.

2015-01-01

Simultaneous measurement of the degree of circular polarization and intensity of a laser beam is essential in advanced photonic applications. However, it is not feasible with conventional helicity dependent detectors where an additional detector is needed to measure the intensity. Here, we report the development of a spin-optoelectronic detector that can measure the degree of circular polarization and the intensity of a laser beam simultaneously. The principle of operation of device is based on the two independent fundamental phenomena occurring in Au/InP hybrid structures, namely, Inverse Spin Hall Effect (ISHE) and the Photo-Voltaic (PV) Effect. The magnitude of ISHE and PV signals is simultaneously measured across the two pairs of contacts that are made on the top of device. No cross talk is observed between the two detectors made on the same chip. The all-electronic compact device is fast, operates at room temperature, and opens up the possibility of many applications in an integrated optoelectronic platform

Characteristics of the Current-Controlled Phase Transition of VO2 Microwires for Hybrid Optoelectronic Devices

Directory of Open Access Journals (Sweden)

Arash Joushaghani

2015-08-01

Full Text Available The optical and electrical characteristics of the insulator-metal phase transition of vanadium dioxide (VO2 enable the realization of power-efficient, miniaturized hybrid optoelectronic devices. This work studies the current-controlled, two-step insulator-metal phase transition of VO2 in varying microwire geometries. Geometry-dependent scaling trends extracted from current-voltage measurements show that the first step induced by carrier injection is delocalized over the microwire, while the second, thermally-induced step is localized to a filament about 1 to 2 μm wide for 100 nm-thick sputtered VO2 films on SiO2. These effects are confirmed by direct infrared imaging, which also measures the change in optical absorption in the two steps. The difference between the threshold currents of the two steps increases as the microwires are narrowed. Micron- and sub-micron-wide VO2 structures can be used to separate the two phase transition steps in photonic and electronic devices.

Terahertz optoelectronics in graphene

International Nuclear Information System (INIS)

Otsuji, Taiichi

2016-01-01

Graphene has attracted considerable attention due to its extraordinary carrier transport, optoelectronic, and plasmonic properties originated from its gapless and linear energy spectra enabling various functionalities with extremely high quantum efficiencies that could never be obtained in any existing materials. This paper reviews recent advances in graphene optoelectronics particularly focused on the physics and device functionalities in the terahertz (THz) electromagnetic spectral range. Optical response of graphene is characterized by its optical conductivity and nonequilibrium carrier energy relaxation dynamics, enabling amplification of THz radiation when it is optically or electrically pumped. Current-injection THz lasing has been realized very recently. Graphene plasmon polaritons can greatly enhance the THz light and graphene matter interaction, enabling giant enhancement in detector responsivity as well as amplifier/laser gain. Graphene-based van der Waals heterostructures could give more interesting and energy-efficient functionalities. (author)

Stress-corrosion cracking of indium tin oxide coated polyethylene terephthalate for flexible optoelectronic devices

International Nuclear Information System (INIS)

Sierros, Konstantinos A.; Morris, Nicholas J.; Ramji, Karpagavalli; Cairns, Darran R.

2009-01-01

Stress corrosion cracking of transparent conductive layers of indium tin oxide (ITO), sputtered on polyethylene terephthalate (PET) substrates, is an issue of paramount importance in flexible optoelectronic devices. These components, when used in flexible device stacks, can be in contact with acid containing pressure-sensitive adhesives or with conductive polymers doped in acids. Acids can corrode the brittle ITO layer, stress can cause cracking and delamination, and stress-corrosion cracking can cause more rapid failure than corrosion alone. The combined effect of an externally-applied mechanical stress to bend the device and the corrosive environment provided by the acid is investigated in this work. We show that acrylic acid which is contained in many pressure-sensitive adhesives can cause corrosion of ITO coatings on PET. We also investigate and report on the combined effect of external mechanical stress and corrosion on ITO-coated PET composite films. Also, it is shown that the combination of stress and corrosion by acrylic acid can cause ITO cracking to occur at stresses less than a quarter of those needed for failure with no corrosion. In addition, the time to failure, under ∼ 1% tensile strain can reduce the total time to failure by as much as a third

Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

Heavy ion elastic recoil detection analysis of optoelectronic and semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Dytlewski, N.; Cohen, D.D. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Johnston, P.; Walker, S. [Royal Melbourne Inst. of Tech., VIC (Australia); Whitlow, H.; Hult, M. [Lund Univ. (Sweden); Oestling, M.; Zaring, C. [Royal Inst. of Tech., Stockholm (Sweden)

1993-12-31

In recent years, the use of heavy ion time-of-flight elastic recoil spectrometry (HIERDA) has been applied to analyse multi-phase, thin layer devices used in optoelectronics, semiconductors and solar power generation. HIERDA gives simultaneously, mass resolved elemental concentration vs depth profiles of the matrix constituents, and is particularly suited to the determination of light elements in a heavy matrix. The beam/target interaction process is similar to RBS, but has the difference that the recoiling target atoms are detected instead of the scattered projectile. High energy, heavy ions beams bombard the sample, ejecting recoil atoms which are detected at a forward angle of 45 deg. A time-of-flight and total energy detection system enables the ejected particle`s mass to be identified, and allows energy spectra to be obtained and interpreted in an analogous way to RBS, but with the important difference that the elemental spectra are separated, and not superimposed on a background as in RBS. Some of the measurements made with a HIERDA system on the ANTARES Tandem Accelerator at ANSTO are described. 1 refs., 4 figs.

Heavy ion elastic recoil detection analysis of optoelectronic and semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Dytlewski, N; Cohen, D D [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Johnston, P; Walker, S [Royal Melbourne Inst. of Tech., VIC (Australia); Whitlow, H; Hult, M [Lund Univ. (Sweden); Oestling, M; Zaring, C [Royal Inst. of Tech., Stockholm (Sweden)

1994-12-31

In recent years, the use of heavy ion time-of-flight elastic recoil spectrometry (HIERDA) has been applied to analyse multi-phase, thin layer devices used in optoelectronics, semiconductors and solar power generation. HIERDA gives simultaneously, mass resolved elemental concentration vs depth profiles of the matrix constituents, and is particularly suited to the determination of light elements in a heavy matrix. The beam/target interaction process is similar to RBS, but has the difference that the recoiling target atoms are detected instead of the scattered projectile. High energy, heavy ions beams bombard the sample, ejecting recoil atoms which are detected at a forward angle of 45 deg. A time-of-flight and total energy detection system enables the ejected particle`s mass to be identified, and allows energy spectra to be obtained and interpreted in an analogous way to RBS, but with the important difference that the elemental spectra are separated, and not superimposed on a background as in RBS. Some of the measurements made with a HIERDA system on the ANTARES Tandem Accelerator at ANSTO are described. 1 refs., 4 figs.

Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering

Science.gov (United States)

Tsai, Chia-Lung; Lu, Yi-Chen; Hsiung Chang, Sheng

2018-07-01

Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m‑2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.

Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

High efficiency optoelectronic terahertz sources

Science.gov (United States)

Lampin, Jean-François; Peytavit, Emilien; Akalin, Tahsin; Ducournau, G.; Hindle, Francis; Mouret, Gael

2010-08-01

We have developed a new generation of optoelectronic large bandwidth terahertz sources based on TEM horn antennas monolithically integrated with several types of photodetectors: low-temperature grown GaAs (LTG-GaAs) planar photoconductors, vertically integrated LTG-GaAs photoconductors on silicon substrate and uni-travelling-carrier photodiodes. Results of pulsed (time-domain) and photomixing (CW, frequency domain) experiments are presented.

Basic opto-electronics on silicon for sensor applications

NARCIS (Netherlands)

Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

1994-01-01

A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

Silicon opto-electronic wavelength tracker based on an asymmetric 2x3 Mach-Zehnder Interferometer

OpenAIRE

Doménech Gómez, José David; Sanchez Fandiño, Javier Antonio; Gargallo Jaquotot, Bernardo Andrés; Baños Lopez, Rocio; Muñoz Muñoz, Pascual

2014-01-01

In this paper we report on the experimental demonstration of a Silicon-on-Insulator opto-electronic wavelength tracker for the optical telecommunication C-band. The device consist of a 2x3 Mach-Zehnder Interferometer (MZI) with 10 pm resolution and photo-detectors integrated on the same chip. The MZI is built interconnecting two Multimode Interference (MMI) couplers with two waveguides whose length difference is 56 mm. The first MMI has a coupling ratio of 95:05 to com...

FY1995 optoelectronic devices and circuits for terabit class network; 1995 nendo terabit kyu network yo hikari denshi device kairo

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

The necessary technology realizing Terabit class optical network is the signal multiplexing both in temporal and spectral domains. Controllability of ultrafast optoelectronic systems is therefore the priority issue. Specifically we chose semiconductor lasers as the key devices. The methodology for performance improvement and the creation of novel functionality are investigated. Firstly compression of semiconductor laser pulse reached the world record of 65 femto second. Secondly a proposal was made to control mode locked semiconductor lasers via subharmonic synchronization and a substantial phase noise reduction was demonstrated. Thirdly a new technology was developed to realize broadband anti-reflection coating on semiconductor laser amplifier facet, bringing about significant performance improvement. To compensate the dispersion induced signal distortion a broadband semiconductor laser amplifier four wave mixing was analyzed and also demonstrated experimentally. (NEDO)

Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

Science.gov (United States)

Du, Xiang

As the sizes of individual components in electronic and optoelectronic devices approach nano scale, the performance of the devices is often determined by surface properties due to their large surface-to-volume ratio. Surface phenomena have become one of the cornerstones in nanoelectronic industry. For this reason, research on the surface functionalization has been tremendous amount of growth over the past decades, and promises to be an increasingly important field in the future. Surface functionalization, as an effective technique to modify the surface properties of a material through a physical or chemical approach, exhibits great potential to solve the problems and challenges, and modulate the performance of nanomaterials based functional devices. Surface functionalization drives the developments and applications of modern electronic and optoelectronic devices fabricated by nanomaterials. In this thesis, I demonstrate two surface functionalization approaches, namely, surface transfer doping and H2 annealing, to effectively solve the problems and significantly enhance the performance of 2D (single structure black phosphorus (BP) and heterostructure graphene/Si Schottky junction), and quasi-1D (molybdenum trioxide (MoO 3) nanobelt) nanomaterials based functional devices, respectively. In situ photoelectron spectroscopy (PES) measurements were also carried out to explore the interfacial charge transfer occurring at the interface between the nanostructures and doping layers, and the gap states in MoO 3 thin films, which provides the underlying mechanism to understand and support our device measurement results. In the first part of this thesis, I will discuss the first surface functionalization approach, namely, surface transfer doping, to effectively modulate the ambipolar characteristics of 2D few-layer BP flakes based FETs. The ambipolar characteristics of BP transistors were effectively modulated through in situ surface functionalization with cesium carbonate (Cs2

Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

Science.gov (United States)

Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

2017-12-01

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

Science.gov (United States)

Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

2015-05-01

The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices

Science.gov (United States)

Raeis-Hosseini, Niloufar; Rho, Junsuk

2017-01-01

Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices. PMID:28878196

Temperature-Dependent Electric Field Poling Effects in CH3NH3PbI3 Optoelectronic Devices.

Science.gov (United States)

Zhang, Chuang; Sun, Dali; Liu, Xiaojie; Sheng, Chuan-Xiang; Vardeny, Zeev Valy

2017-04-06

Organo-lead halide perovskites show excellent optoelectronic properties; however, the unexpected inconsistency in forward-backward I-V characteristics remains a problem for fabricating solar panels. Here we have investigated the reasons behind this "hysteresis" by following the changes in photocurrent and photoluminescence under electric field poling in transverse CH 3 NH 3 PbI 3 -based devices from 300 to 10 K. We found that the hysteresis disappears at cryogenic temperatures, indicating the "freeze-out" of the ionic diffusion contribution. When the same device is cooled under continuous poling, the built-in electric field from ion accumulation brings significant photovoltaic effect even at 10 K. From the change of photoluminescence upon polling, we found a second dipole-related mechanism which enhances radiative recombination upon the alignment of the organic cations. The ionic origin of hysteresis was also verified by applying a magnetic field to affect the ion diffusion. These findings reveal the coexistence of ionic and dipole-related mechanisms for the hysteresis in hybrid perovskites.

Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

Science.gov (United States)

Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

2013-10-13

Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

Terahertz optoelectronics with surface plasmon polariton diode.

Science.gov (United States)

Vinnakota, Raj K; Genov, Dentcho A

2014-05-09

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

Radiation effects in optoelectronic devices

International Nuclear Information System (INIS)

Barnes, C.E.

1977-03-01

A summary is given of studies on radiation effects in light-emitting diodes, laser diodes, detectors, optical isolators and optical fibers. It is shown that the study of radiation damage in these devices can provide valuable information concerning the nature of the devices themselves, as well as methods of hardening these devices for applications in radiation environments

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

Science.gov (United States)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges

Science.gov (United States)

Zhang, Wei

In this research project I have investigated AlGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular beam epitaxy on 4H-SiC, 6H-SiC and c-plane sapphire substrates. In the growth of AlGaN/AlN multiple quantum wells on SiC substrates, the AlGaN wells were grown under excess Ga, far beyond than what is required for the growth of stoichiometric AlGaN films, which resulted in liquid phase epitaxy growth mode. Due to the statistical variations of the excess Ga on the growth front we found that this growth mode leads to films with lateral variations in the composition and thus, band structure potential fluctuations. Transmission electron microscopy shows that the wells in such structures are not homogeneous but have the appearance of quantum dots. We find by temperature dependent photoluminescence measurements that the multiple quantum wells with band structure potential fluctuations emit at 240 nm and have room temperature internal quantum efficiency as high as 68%. Furthermore, they were found to have a maximum net modal optical gain of 118 cm-1 at a transparency threshold corresponding to 1.4 x 1017 cm-3 excited carriers. We attribute this low transparency threshold to population inversion of only the regions of the potential fluctuations rather than of the entire matrix. Some prototype deep UV emitting LED structures were also grown by the same method on sapphire substrates. Optoelectronic devices for terahertz light emission and detection, based on intersubband transitions in III-nitride semiconductor quantum wells, were grown on single crystal c-plane GaN substrates. Growth conditions such the ratio of group III to active nitrogen fluxes, which determines the appropriate Ga-coverage for atomically smooth growth without requiring growth interruptions were employed. Emitters designed in the quantum cascade

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

KAUST Repository

Muhammed, Mufasila Mumthaz

2018-03-11

III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Energy Technology Data Exchange (ETDEWEB)

Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2016-04-30

Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

High bandgap III-V alloys for high efficiency optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Exploration on the training mode of application-oriented talents majoring in optoelectronic information

Science.gov (United States)

Lv, Hao; Liu, Aimei; Zhang, Shengyi; Xiao, Yongjun

2017-08-01

The optoelectronic information major is a strong theoretical and practical specialty. In view of the problems existing in the application-oriented talents training in the optoelectronic information specialty. Five aspects of the talent cultivation plan, the teaching staff, the teaching content, the practical teaching and the scientific research on the training mode of application-oriented talents majoring in optoelectronic information are putted forward. It is beneficial to the specialty construction of optoelectronic information industry which become close to the development of enterprises, and the depth of the integration of school and enterprise service regional economic optoelectronic information high-end skilled personnel base.

Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

KAUST Repository

Botiz, Ioan; Stingelin, Natalie

2014-01-01

It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

Directory of Open Access Journals (Sweden)

Ioan Botiz

2014-03-01

Full Text Available It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties.

Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

KAUST Repository

Botiz, Ioan

2014-03-19

It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

ACCURACY COMPARISON OF ALGORITHMS FOR DETERMINATION OF IMAGE CENTER COORDINATES IN OPTOELECTRONIC DEVICES

Directory of Open Access Journals (Sweden)

N. A. Starasotnikau

2018-01-01

Full Text Available Accuracy in determination of coordinates for image having simple shapes is considered as one of important and significant parameters in metrological optoelectronic systems such as autocollimators, stellar sensors, Shack-Hartmann sensors, schemes for geometric calibration of digital cameras for aerial and space imagery, various tracking systems. The paper describes a mathematical model for a measuring stand based on a collimator which projects a test-object onto a photodetector of an optoelectronic device. The mathematical model takes into account characteristic noises for photodetectors: a shot noise of the desired signal (photon and a shot noise of a dark signal, readout and spatial heterogeneity of CCD (charge-coupled device matrix elements. In order to reduce noise effect it is proposed to apply the Wiener filter for smoothing an image and its unambiguous identification and also enter a threshold according to brightness level. The paper contains a comparison of two algorithms for determination of coordinates in accordance with energy gravity center and contour. Sobel, Pruitt, Roberts, Laplacian Gaussian, Canni detectors have been used for determination of the test-object contour. The essence of the algorithm for determination of coordinates lies in search for an image contour in the form of a circle with its subsequent approximation and determination of the image center. An error calculation has been made while determining coordinates of a gravity center for test-objects of various diameters: 5, 10, 20, 30, 40, 50 pixels of a photodetector and also signalto-noise ratio values: 200, 100, 70, 20, 10. Signal-to-noise ratio has been calculated as a difference between maximum image intensity of the test-object and the background which is divided by mean-square deviation of the background. The accuracy for determination of coordinates has been improved by 0.5-1 order in case when there was an increase in a signal-to-noise ratio. Accuracy

Characterization of Semiconductor Nanocrystal Assemblies as Components of Optoelectronic Devices

Science.gov (United States)

Malfavon-Ochoa, Mario

dispersions of core and core/shell NCs will be shown to produce close packed assemblies of NCs forming near-wavelength luminescent superstructures separated in space. We show the dominant contribution of a two-monolayer thick sharp interface CdS shell to the diffraction efficiency, and necessarily the refractive index, of the NCs, independent of core size. Utilization of these gratings as in-coupling elements at various positions within a device architecture are also examined. These new observations were achieved by unprecedented control of NC architecture during dispersion processing, while maintaining high luminescence, made possible by optimized NC surface passivation. These studies enable the formation of new LED architectures, and new optoelectronic devices based on angle resolved, monochromatic fluorescence from diffraction gratings prepared from simple solution processing approaches. Further, the novel observation of angle amplified interfering fluorescence from these features is argued to be a result of long range radiative coupling and superradiance enabled by the monodispersity and high-quality NC surface passivation described herein.

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

Science.gov (United States)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

Graphene optoelectronics synthesis, characterization, properties, and applications

CERN Document Server

bin M Yusoff, Abdul Rashid

2014-01-01

This first book on emerging applications for this innovative material gives an up-to-date account of the many opportunities graphene offers high-end optoelectronics.The text focuses on potential as well as already realized applications, discussing metallic and passive components, such as transparent conductors and smart windows, as well as high-frequency devices, spintronics, photonics, and terahertz devices. Also included are sections on the fundamental properties, synthesis, and characterization of graphene. With its unique coverage, this book will be welcomed by materials scientists, solid-

Planar-integrated single-crystalline perovskite photodetectors

KAUST Repository

Saidaminov, Makhsud I.

2015-11-09

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 104 electrons per photon) and high gain-bandwidth product (above 108 Hz) relative to other perovskite-based optical sensors.

Light box for investigation of characteristics of optoelectronics detectors

Science.gov (United States)

Szreder, Agnieszka; Mazikowski, Adam

2017-09-01

In this paper, a light box for investigation of characteristics of optoelectronic detectors is described. The light box consists of an illumination device, an optical power sensor and a mechanical enclosure. The illumination device is based on four types of high-power light emitting diodes (LED): white light, red, green and blue. The illumination level can be varied for each LED independently by the driver and is measured by optical power sensor. The mechanical enclosure provides stable mounting points for the illumination device, sensor and the examined detector and protects the system from external light, which would otherwise strongly influence the measurement results. Uniformity of illumination distribution provided by the light box for all colors is good, making the measurement results less dependent on the position of the examined detector. The response of optoelectronic detectors can be investigated using the developed light box for each LED separately or for any combination of up to four LED types. As the red, green and blue LEDs are rather narrow bandwidth sources, spectral response of different detectors can be examined for these wavelength ranges. The described light box can be used for different applications. Its primary use is in a student laboratory setup for investigation of characteristics of optoelectronic detectors. Moreover, it can also be used in various colorimetric or photographic applications. Finally, it will be used as a part of demonstrations from the fields of vision and color, performed during science fairs and outreach activities increasing awareness of optics and photonics.

Investigational Clinical Trial of a Prototype Optoelectronic Computer-Aided Navigation Device for Dental Implant Surgery.

Science.gov (United States)

Jokstad, Asbjørn; Winnett, Brenton; Fava, Joseph; Powell, David; Somogyi-Ganss, Eszter

New digital technologies enable real-time computer-aided (CA) three-dimensional (3D) guidance during dental implant surgery. The aim of this investigational clinical trial was to demonstrate the safety and effectiveness of a prototype optoelectronic CA-navigation device in comparison with the conventional approach for planning and effecting dental implant surgery. Study participants with up to four missing teeth were recruited from the pool of patients referred to the University of Toronto Graduate Prosthodontics clinic. The first 10 participants were allocated to either a conventional or a prototype device study arm in a randomized trial. The next 10 participants received implants using the prototype device. All study participants were restored with fixed dental prostheses after 3 (mandible) or 6 (maxilla) months healing, and monitored over 12 months. The primary outcome was the incidence of any surgical, biologic, or prosthetic adverse events or device-related complications. Secondary outcomes were the incidence of positioning of implants not considered suitable for straightforward prosthetic restoration (yes/no); the perception of the ease of use of the prototype device by the two oral surgeons, recorded by use of a Likert-type questionnaire; and the clinical performance of the implant and superstructure after 1 year in function. Positioning of the implants was appraised on periapical radiographs and clinical photographs by four independent blinded examiners. Peri-implant bone loss was measured on periapical radiographs by a blinded examiner. No adverse events occurred related to placing any implants. Four device-related complications led to a switch from using the prototype device to the conventional method. All implants placed by use of the prototype device were in a position considered suitable for straightforward prosthetic restoration (n = 21). The qualitative evaluation by the surgeons was generally positive, although ergonomic challenges were identified

The construction of bilingual teaching of optoelectronic technology

Science.gov (United States)

Zhang, Yang; Zhao, Enming; Yang, Fan; Li, Qingbo; Zhu, Zheng; Li, Cheng; Sun, Peng

2017-08-01

This paper combines the characteristics of optoelectronic technology with that of bilingual teaching. The course pays attention to integrating theory with practice, and cultivating learners' ability. Reform and exploration have been done in the fields of teaching materials, teaching content, teaching methods, etc. The concrete content mainly includes five parts: selecting teaching materials, establishing teaching syllabus, choosing suitable teaching method, making multimedia courseware and improving the test system, which can arouse students' interest in their study and their autonomous learning ability to provide beneficial references for improving the quality of talents of optoelectronic bilingual courses.

Integrated lenses in polystyrene microfluidic devices

KAUST Repository

Fan, Yiqiang; Li, Huawei; Foulds, Ian G.

2013-01-01

This paper reports a new method for integrating microlenses into microfluidic devices for improved observation. Two demonstration microfluidic devices were provided which were fabricated using this new technique. The integrated microlenses were

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

Science.gov (United States)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

High performance bio-integrated devices

Science.gov (United States)

Kim, Dae-Hyeong; Lee, Jongha; Park, Minjoon

2014-06-01

In recent years, personalized electronics for medical applications, particularly, have attracted much attention with the rise of smartphones because the coupling of such devices and smartphones enables the continuous health-monitoring in patients' daily life. Especially, it is expected that the high performance biomedical electronics integrated with the human body can open new opportunities in the ubiquitous healthcare. However, the mechanical and geometrical constraints inherent in all standard forms of high performance rigid wafer-based electronics raise unique integration challenges with biotic entities. Here, we describe materials and design constructs for high performance skin-mountable bio-integrated electronic devices, which incorporate arrays of single crystalline inorganic nanomembranes. The resulting electronic devices include flexible and stretchable electrophysiology electrodes and sensors coupled with active electronic components. These advances in bio-integrated systems create new directions in the personalized health monitoring and/or human-machine interfaces.

Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis; Fabrim, Zacarias Eduardo; Ahmadpour, Mehrad

2015-01-01

In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of the reported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during...... significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic...... properties in these films holds strong promise for their implementation in optoelectronic devices....

Transfer Printed Nanomembranes for Heterogeneously Integrated Membrane Photonics

Directory of Open Access Journals (Sweden)

Hongjun Yang

2015-11-01

Full Text Available Heterogeneous crystalline semiconductor nanomembrane (NM integration is investigated for single-layer and double-layer Silicon (Si NM photonics, III-V/Si NM lasers, and graphene/Si NM total absorption devices. Both homogeneous and heterogeneous integration are realized by the versatile transfer printing technique. The performance of these integrated membrane devices shows, not only intact optical and electrical characteristics as their bulk counterparts, but also the unique light and matter interactions, such as Fano resonance, slow light, and critical coupling in photonic crystal cavities. Such a heterogeneous integration approach offers tremendous practical application potentials on unconventional, Si CMOS compatible, and high performance optoelectronic systems.

Optoelectronic inventory system for special nuclear material

International Nuclear Information System (INIS)

Sieradzki, F.H.

1994-01-01

In support of the Department of Energy's Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item's exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer's requirements

Optoelectronic interconnects for 3D wafer stacks

Science.gov (United States)

Ludwig, David; Carson, John C.; Lome, Louis S.

1996-01-01

Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

International Nuclear Information System (INIS)

Byun, Kwangsub; Cho, Kyoungah; Kim, Sangsig

2010-01-01

The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

Optoelectronics of Molecules and Polymers

CERN Document Server

Moliton, André

2006-01-01

Optoelectronic devices are being developed at an extraordinary rate. Organic light emitting diodes, photovoltaic devices and electro-optical modulators are pivotal to the future of displays, photosensors and solar cells, and communication technologies. This book details the theories underlying the relevant mechanisms in organic materials and covers, at a basic level, how the organic components are made. The first part of this book introduces the fundamental theories used to detail ordered solids and localised energy levels. The methods used to determine energy levels in perfectly ordered molecular and macromolecular systems are discussed, making sure that the effects of quasi-particles are not missed. The function of excitons and their transfer between two molecules are studied, and the problems associated with interfaces and charge injection into resistive media are presented. The second part details technological aspects such as the fabrication of devices based on organic materials by dry etching. The princ...

Mild Conditions for Deuteration of Primary and Secondary Arylamines for the Synthesis of Deuterated Optoelectronic Organic Molecules

Directory of Open Access Journals (Sweden)

Anwen M. Krause-Heuer

2014-11-01

Full Text Available Deuterated arylamines demonstrate great potential for use in optoelectronic devices, but their widespread utility requires a method for large-scale synthesis. The incorporation of these deuterated materials into optoelectronic devices also provides the opportunity for studies of the functioning device using neutron reflectometry based on the difference in the scattering length density between protonated and deuterated compounds. Here we report mild deuteration conditions utilising standard laboratory glassware for the deuteration of: diphenylamine, N-phenylnaphthylamine, N-phenyl-o-phenylenediamine and 1-naphthylamine (via H/D exchange in D2O at 80 °C, catalysed by Pt/C and Pd/C. These conditions were not successful in the deuteration of triphenylamine or N,N-dimethylaniline, suggesting that these mild conditions are not suitable for the deuteration of tertiary arylamines, but are likely to be applicable for the deuteration of other primary and secondary arylamines. The deuterated arylamines can then be used for synthesis of larger organic molecules or polymers with optoelectronic applications.

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Graphene and Two-Dimensional Materials for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Andreas Bablich

2016-03-01

Full Text Available This article reviews optoelectronic devices based on graphene and related two-dimensional (2D materials. The review includes basic considerations of process technology, including demonstrations of 2D heterostructure growth, and comments on the scalability and manufacturability of the growth methods. We then assess the potential of graphene-based transparent conducting electrodes. A major part of the review describes photodetectors based on lateral graphene p-n junctions and Schottky diodes. Finally, the progress in vertical devices made from 2D/3D heterojunctions, as well as all-2D heterostructures is discussed.

Compound semiconductor device modelling

CERN Document Server

Miles, Robert

1993-01-01

Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

Progress in the optoelectronic analog signal transfer for high energy particle detectors

International Nuclear Information System (INIS)

Tsang, T.; Radeka, V.

1992-05-01

We report the progress in the development of a radiation hard Optoelectronic analog system to transfer particle detector signals with high accuracy. We will present the motivation of this study, the operating principle of the optoelectronic system, the system noise study, the recent R ampersand D efforts on radiation effect, temperature stability, and the realization of an integrated l x l6 optical modulator. The issue of photon source for driving such a large-scale optoelectronic modulators is a major concern. We will address this problem by examining different possible photon sources and comment on other possible alternative for signal transfer

Exfoliating and Dispersing Few-Layered Graphene in Low-Boiling-Point Organic Solvents towards Solution-Processed Optoelectronic Device Applications.

Science.gov (United States)

Zhang, Lu; Miao, Zhongshuo; Hao, Zhen; Liu, Jun

2016-05-06

With normal organic surfactants, graphene can only be dispersed in water and cannot be dispersed in low-boiling-point organic solvents, which hampers its application in solution-processed organic optoelectronic devices. Herein, we report the exfoliation of graphite into graphene in low-boiling-point organic solvents, for example, methanol and acetone, by using edge-carboxylated graphene quantum dots (ECGQD) as the surfactant. The great capability of ECGQD for graphene dispersion is due to its ultralarge π-conjugated unit that allows tight adhesion on the graphene surface through strong π-π interactions, its edge-carboxylated structure that diminishes the steric effects of the oxygen-containing functional groups on the basal plane of ECGQD, and its abundance of carboxylic acid groups for solubility. The graphene dispersion in methanol enables the application of graphene:ECGQD as a cathode interlayer in polymer solar cells (PSCs). Moreover, the PSC device performance of graphene:ECGQD is better than that of Ca, the state-of-the-art cathode interlayer material. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Integrated lenses in polystyrene microfluidic devices

KAUST Repository

Fan, Yiqiang

2013-04-01

This paper reports a new method for integrating microlenses into microfluidic devices for improved observation. Two demonstration microfluidic devices were provided which were fabricated using this new technique. The integrated microlenses were fabricated using a free-surface thermo-compression molding method on a polystyrene (PS) sheet which was then bonded on top of microfluidic channels as a cover plate, with the convex microlenses providing a magnified image of the channel for the easier observation of the flow in the microchannels. This approach for fabricating the integrated microlens in microfluidic devices is rapid, low cost and without the requirement of cleanroom facilities. © 2013 IEEE.

Integrated graphene based modulators enabled by interfacing plasmonic slot and silicon waveguides

DEFF Research Database (Denmark)

Xiao, Sanshui

Graphene has offered a new paradigm for extremely fast and active optoelectronic devices due to its unique electronic and optical properties [1]. With the combination of high-index dielectric waveguides/resonators, several integrated graphene-based optical modulators have already been demonstrated...

Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices †

KAUST Repository

Beljonne, David

2011-02-08

We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational techniques used to assess the morphology of organic: organic heterojunctions; we highlight the compromises that are necessary to handle large systems and multiple time scales while preserving the atomistic details required for subsequent computations of the electronic and optical properties. We then review some recent theoretical advances in describing the ground-state electronic structure at heterojunctions between donor and acceptor materials and highlight the role played by charge-transfer and long-range polarization effects. Finally, we discuss the modeling of the excited-state electronic structure at organic:organic interfaces, which is a key aspect in the understanding of the dynamics of photoinduced electron-transfer processes. © 2010 American Chemical Society.

Integrated Automatic Test System for Airborne Optoelectronic Pods

International Nuclear Information System (INIS)

Zhang, Z M; Ding, M J; Wang, L

2006-01-01

Based on the introduction of the construction and basic principle of the airborne optoelectronic pod, in accordance with the performance standards of the pod, the total solution scheme of the automatic test system used for testing the combination property is proposed in this paper. The main structure, hardware and software design of the system based on the virtual instruments technology are also discussed in detail. The result of the true run proves the practicality, efficiency, high accuracy and other characteristics of the computer aided testing system based on virtual instruments

Comprehensive study of the influence of different environments on degradation processes in F8BT: Correlating optoelectronic properties with Raman measurements

International Nuclear Information System (INIS)

Linde, Sivan; Shikler, Rafi

2013-01-01

There is a growing interest in conjugated polymers from both industrial and academic points of views. The reasons are their tunable optoelectronic properties, ease of production, and excellent mechanical properties. However, the ease with which their optoelectronic properties are tunable make devices based on them prone to fast degradation and therefore, short life time. The issue of degradation of organic based optoelectronic devices is the topic of many ongoing researches. However, much less attention is given to degradation processes of the individual components of the devices and their dependence on the environmental conditions. In this work, we report on the degradation of a film of a polyfluorene block copolymer F8BT that is used in a variety of optoelectronic devices under different environments: Sun exposure, heating, and UV exposure in inert and ambient conditions. Degradation was observed in most of the optoelectronic properties of the film. Topographic measurements did not show observable changes of the film morphology following degradation. However, Raman spectroscopy measurements show changes that indicate degradation in one of the building blocks of the copolymer that is associated with electron's conduction. The absolute value of the correlation coefficient between the decrease in the Raman signal and the decrease in the optoelectronic properties is larger than 0.95 under sun exposure it is larger than 0.8 under all other ambient exposures and smaller than 0.65 under inert conditions. These results support the assumption that Oxygen, not necessarily through photo-oxidation, and also water play an important role in the degradation process and indicate the part of the polymer that is most susceptible to degradation

Optoelectronic properties of valence-state-controlled amorphous niobium oxide

Science.gov (United States)

Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

2016-06-01

In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

Science.gov (United States)

Liang, Yu Teng

Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic

Integrated optical circuit engineering V; Proceedings of the Meeting, San Diego, CA, Aug. 17-20, 1987

Science.gov (United States)

Mentzer, Mark A.

Recent advances in the theoretical and practical design and applications of optoelectronic devices and optical circuits are examined in reviews and reports. Topics discussed include system and market considerations, guided-wave phenomena, waveguide devices, processing technology, lithium niobate devices, and coupling problems. Consideration is given to testing and measurement, integrated optics for fiber-optic systems, optical interconnect technology, and optical computing.

Design of optoelectronic system for optical diffusion tomography

Directory of Open Access Journals (Sweden)

Erakhtin Igor

2017-01-01

Full Text Available This article explores issues connected with the circuit design of a device for optical diffusion tomography, which we are currently designing. We plan to use the device in experimental studies for the development of a faster method of brain hematoma detection. We reviewed currently existing methods for emergency diagnosis of hematomas, primarily the Infrascanner model 2000, for which we identified weaknesses, and outlined suggestions for improvements. This article describes the method of scanning tissues based on a triangulated arrangement of sources and receivers of optical radiation, and it discusses the optoelectronic system that implements that principle.

Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy

Science.gov (United States)

Hazbun, Ramsey Michael

Near infrared and mid infrared optoelectronic devices have become increasingly important for the telecommunications, security, and medical imaging industries. The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid infrared (IR) applications. In xGa1-xSb1-y Ny/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, were modeled using eight-band k˙p simulations to analyze the superlattice miniband energies. Three different zero-stress strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1-xSb 1-yNy barrier thickness. Optoelectronics have traditionally been the realm of III-V semiconductors due to their direct band gap, while integrated circuit chips have been the realm of Group IV semiconductors such as silicon because of its relative abundance and ease of use. Recently the alloying of Sn with Ge and Si has been shown to allow direct band-gap light emission. This presents the exciting prospect of integrating optoelectronics into current Group IV chip fabrication facilities. However, new approaches for low temperature growth are needed to realize these new SiGeSn alloys. Silicon-germanium epitaxy via ultra-high vacuum chemical vapor deposition has the advantage of allowing low process temperatures. Deposition processes are sensitive to substrate surface preparation and the time delay between oxide removal and epitaxial growth. A new monitoring process utilizing doped substrates and defect decoration etching is demonstrated to have controllable and unique sensitivity to interfacial contaminants. Doped substrates were prepared and subjected to various loading conditions prior to the growth of typical Si/SiGe bilayers. The defect densities were correlated to the concentration of interfacial oxygen suggesting this monitoring process may be an effective complement to monitoring via secondary ion mass spectrometry

Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling

Science.gov (United States)

Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin

2011-12-01

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

Science.gov (United States)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

Science.gov (United States)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Optoelectronic insights into the photovoltaic losses from photocurrent, voltage, and energy perspectives

Science.gov (United States)

Shang, Aixue; An, Yidan; Ma, Dong; Li, Xiaofeng

2017-08-01

Photocurrent and voltage losses are the fundamental limitations for improving the efficiency of photovoltaic devices. It is indeed that a comprehensive and quantitative differentiation of the performance degradation in solar cells will promote the understanding of photovoltaic physics as well as provide a useful guidance to design highly-efficient and cost-effective solar cells. Based on optoelectronic simulation that addresses electromagnetic and carrier-transport responses in a coupled finite-element method, we report a detailed quantitative analysis of photocurrent and voltage losses in solar cells. We not only concentrate on the wavelength-dependent photocurrent loss, but also quantify the variations of photocurrent and operating voltage under different forward electrical biases. Further, the device output power and power losses due to carrier recombination, thermalization, Joule heat, and Peltier heat are studied through the optoelectronic simulation. The deep insight into the gains and losses of the photocurrent, voltage, and energy will contribute to the accurate clarifications of the performance degradation of photovoltaic devices, enabling a better control of the photovoltaic behaviors for high performance.

Battery-free, stretchable optoelectronic systems for wireless optical characterization of the skin.

Science.gov (United States)

Kim, Jeonghyun; Salvatore, Giovanni A; Araki, Hitoshi; Chiarelli, Antonio M; Xie, Zhaoqian; Banks, Anthony; Sheng, Xing; Liu, Yuhao; Lee, Jung Woo; Jang, Kyung-In; Heo, Seung Yun; Cho, Kyoungyeon; Luo, Hongying; Zimmerman, Benjamin; Kim, Joonhee; Yan, Lingqing; Feng, Xue; Xu, Sheng; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Paik, Ungyu; Rogers, John A

2016-08-01

Recent advances in materials, mechanics, and electronic device design are rapidly establishing the foundations for health monitoring technologies that have "skin-like" properties, with options in chronic (weeks) integration with the epidermis. The resulting capabilities in physiological sensing greatly exceed those possible with conventional hard electronic systems, such as those found in wrist-mounted wearables, because of the intimate skin interface. However, most examples of such emerging classes of devices require batteries and/or hard-wired connections to enable operation. The work reported here introduces active optoelectronic systems that function without batteries and in an entirely wireless mode, with examples in thin, stretchable platforms designed for multiwavelength optical characterization of the skin. Magnetic inductive coupling and near-field communication (NFC) schemes deliver power to multicolored light-emitting diodes and extract digital data from integrated photodetectors in ways that are compatible with standard NFC-enabled platforms, such as smartphones and tablet computers. Examples in the monitoring of heart rate and temporal dynamics of arterial blood flow, in quantifying tissue oxygenation and ultraviolet dosimetry, and in performing four-color spectroscopic evaluation of the skin demonstrate the versatility of these concepts. The results have potential relevance in both hospital care and at-home diagnostics.

Proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices

International Nuclear Information System (INIS)

Singh, R.; Messick, L.J.

1989-01-01

This book contains the proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices. Topics covered include: Growth and characterization of bulk and epitaxial films, Passivation technology, Processing technology, High speed optoelectronic integrated circuits, and Solar cells

Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

KAUST Repository

Khan, Jafar Iqbal

2016-03-03

Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials\\' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Manipulation of Self-Assembled Microparticle Chains by Electroosmotic Flow Assisted Electrorotation in an Optoelectronic Device

Directory of Open Access Journals (Sweden)

Xiaolu Zhu

2015-09-01

Full Text Available A method incorporating the optically induced electrorotation (OER and alternating current electroosmotic (ACEO effects, for the formation and motion control of microparticle chains, is numerically and experimentally demonstrated. In this method, both the rotating electric field and ACEO fluid roll are generated around the border between light and dark area of the fluidic chamber in an optoelectronic tweezers (OET device. The experimental results show that the particle chains can self-rotate in their pitch axes under the rotating electric field produced due to the different impedances of the photoconductive layer in light and dark areas, and have a peak self-rotating rate at around 1 MHz. The orbital movement of entire particle chain around the center of ACEO fluid roll can be achieved from 0.5 to 600 kHz. The strength of OER motion and ACEO-caused orbital movement of particle chains can be adjusted by changing the frequency of alternating current (AC voltage. This non-contact method has the potential for spatially regulating the posture, orientation and position of microparticle chains.

David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

Science.gov (United States)

Riel, Heike

Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

Science.gov (United States)

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

Science.gov (United States)

Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

2015-05-06

Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

Interface Engineering and Morphology Study of Thin Film Organic-Inorganic Halide Perovskite Optoelectronic Devices

Science.gov (United States)

Meng, Lei

significantly improved compared with cells made with organic layers. Degradation mechanisms were investigated and important guidelines were derived for future device design with a view to achieving both highly efficient and stable solar devices. Organometal halide based perovskite material has great optoelectronic proprieties, for example, shallow traps, benign grain boundaries and high diffusion length. The perovskite LEDs show pure electroluminescence (EL) with narrow full width at half maximum (FWHM), which is an advantage for display, lighting or lasing applications. In chapter five, perovskite LEDs are demonstrated employing solution processed charge injection layers with a quantum efficiency of 1.16% with a very low driving voltage.

Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

KAUST Repository

Banavoth, Murali

2016-12-14

Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including various fabrication methods, device architectures, and surface passivation, progress is yet to be made in understanding the actual operational temperature on the electronic properties and the device performances. Therefore, the substantial effect of temperature on the optoelectronic properties, charge separation, charge recombination dynamics, and photoconversion efficiency are explored. The results clearly demonstrated a significant enhancement in the carrier mobility, photocurrent, charge carrier lifetime, and solar cell performance in the 60 ± 5 °C temperature range. In this temperature range, perovskite crystal exhibits a highly symmetrical relaxed cubic structure with well-aligned domains that are perpendicular to a principal axis, thereby remarkably improving the device operation. This finding provides a new key variable component and paves the way toward using perovskite crystals in highly efficient photovoltaic cells.

Organic bistable light-emitting devices

Science.gov (United States)

Ma, Liping; Liu, Jie; Pyo, Seungmoon; Yang, Yang

2002-01-01

An organic bistable device, with a unique trilayer structure consisting of organic/metal/organic sandwiched between two outmost metal electrodes, has been invented. [Y. Yang, L. P. Ma, and J. Liu, U.S. Patent Pending, U.S. 01/17206 (2001)]. When the device is biased with voltages beyond a critical value (for example 3 V), the device suddenly switches from a high-impedance state to a low-impedance state, with a difference in injection current of more than 6 orders of magnitude. When the device is switched to the low-impedance state, it remains in that state even when the power is off. (This is called "nonvolatile" phenomenon in memory devices.) The high-impedance state can be recovered by applying a reverse bias; therefore, this bistable device is ideal for memory applications. In order to increase the data read-out rate of this type of memory device, a regular polymer light-emitting diode has been integrated with the organic bistable device, such that it can be read out optically. These features make the organic bistable light-emitting device a promising candidate for several applications, such as digital memories, opto-electronic books, and recordable papers.

International Conference on Integrated Optical Circuit Engineering, 1st, Cambridge, MA, October 23-25, 1984, Proceedings

Science.gov (United States)

Ostrowsky, D. B.; Sriram, S.

Aspects of waveguide technology are explored, taking into account waveguide fabrication techniques in GaAs/GaAlAs, the design and fabrication of AlGaAs/GaAs phase couplers for optical integrated circuit applications, ion implanted GaAs integrated optics fabrication technology, a direct writing electron beam lithography based process for the realization of optoelectronic integrated circuits, and advances in the development of semiconductor integrated optical circuits for telecommunications. Other subjects examined are related to optical signal processing, optical switching, and questions of optical bistability and logic. Attention is given to acousto-optic techniques in integrated optics, acousto-optic Bragg diffraction in proton exchanged waveguides, optical threshold logic architectures for hybrid binary/residue processors, integrated optical modulation and switching, all-optic logic devices for waveguide optics, optoelectronic switching, high-speed photodetector switching, and a mechanical optical switch.

Commercialization issues and funding opportunities for high-performance optoelectronic computing modules

Science.gov (United States)

Hessenbruch, John M.; Guilfoyle, Peter S.

1997-01-01

Low power, optoelectronic integrated circuits are being developed for high speed switching and data processing applications. These high performance optoelectronic computing modules consist of three primary components: vertical cavity surface emitting lasers, diffractive optical interconnect elements, and detector/amplifier/laser driver arrays. Following the design and fabrication of an HPOC module prototype, selected commercial funding sources will be evaluated to support a product development stage. These include the formation of a strategic alliance with one or more microprocessor or telecommunications vendors, and/or equity investment from one or more venture capital firms.

Ultrafast Phase Comparator for Phase-Locked Loop-Based Optoelectronic Clock Recovery Systems

DEFF Research Database (Denmark)

Gomez-Agis, F.; Oxenløwe, Leif Katsuo; Kurimura, S.

2009-01-01

The authors report on a novel application of a chi((2)) nonlinear optical device as an ultrafast phase comparator, an essential element that allows an optoelectronic phase-locked loop to perform clock recovery of ultrahigh-speed optical time-division multiplexed (OTDM) signals. Particular interest...... is devoted to a quasi-phase-matching adhered-ridge-waveguide periodically poled lithium niobate (PPLN) device, which shows a sufficient high temporal resolution to resolve a 640 Gbits OTDM signal....

Fully integrated monolithic opoelectronic transducer for real.time protein and DNA detection

DEFF Research Database (Denmark)

Misiakos, Konstatinos; S. Petrou, Panagiota; E. Kakabakos, Sotirios

2010-01-01

The development and testing of a portable bioanalytical device which was capable for real-time monitoring of binding assays was demonstrated. The device was based on arrays of nine optoelectronic transducers monolithically integrated on silicon chips. The optocouplers consisted of nine silicon av...... by exploiting wavelength filtering on photonic crystal engineered waveguides. The proposed miniaturized sensing device with proper packaging and accompanied by a portable instrument can find wide application as a platform for reliable and cost effective point-of-care diagnosis....

Integrated Ultrasonic-Photonic Devices

DEFF Research Database (Denmark)

Barretto, Elaine Cristina Saraiva

in channel waveguides and Mach-Zehnder interferometers. Numerical models are developed based on the finite element method, and applied to several scenarios, such as optimization of the geometrical parameters of waveguides, use of slow light in photonic crystal waveguides and use of Lamb waves in membranized......This thesis deals with the modeling, design, fabrication and characterization of integrated ultrasonic-photonic devices, with particular focus on the use of standard semiconductor materials such as GaAs and silicon. The devices are based on the use of guided acoustic waves to modulate the light...... investigated. Comparisons are made with the numerical and experimental results, and they validate the obtained response of the acoustic and photonic components of the device. Finally, a new design for an optical frequency shifter is proposed, posing several advantages over existing devices in terms of size...

Biotunable Nanoplasmonic Filter on Few-Layer MoS2 for Rapid and Highly Sensitive Cytokine Optoelectronic Immunosensing.

Science.gov (United States)

Park, Younggeun; Ryu, Byunghoon; Oh, Bo-Ram; Song, Yujing; Liang, Xiaogan; Kurabayashi, Katsuo

2017-06-27

Monitoring of the time-varying immune status of a diseased host often requires rapid and sensitive detection of cytokines. Metallic nanoparticle-based localized surface plasmon resonance (LSPR) biosensors hold promise to meet this clinical need by permitting label-free detection of target biomolecules. These biosensors, however, continue to suffer from relatively low sensitivity as compared to conventional immunoassay methods that involve labeling processes. Their response speeds also need to be further improved to enable rapid cytokine quantification for critical care in a timely manner. In this paper, we report an immunobiosensing device integrating a biotunable nanoplasmonic optical filter and a highly sensitive few-layer molybdenum disulfide (MoS 2 ) photoconductive component, which can serve as a generic device platform to meet the need of rapid cytokine detection with high sensitivity. The nanoplasmonic filter consists of anticytokine antibody-conjugated gold nanoparticles on a SiO 2 thin layer that is placed 170 μm above a few-layer MoS 2 photoconductive flake device. The principle of the biosensor operation is based on tuning the delivery of incident light to the few-layer MoS 2 photoconductive flake thorough the nanoplasmonic filter by means of biomolecular surface binding-induced LSPR shifts. The tuning is dependent on cytokine concentration on the nanoplasmonic filter and optoelectronically detected by the few-layer MoS 2 device. Using the developed optoelectronic biosensor, we have demonstrated label-free detection of IL-1β, a pro-inflammatory cytokine, with a detection limit as low as 250 fg/mL (14 fM), a large dynamic range of 10 6 , and a short assay time of 10 min. The presented biosensing approach could be further developed and generalized for point-of-care diagnosis, wearable bio/chemical sensing, and environmental monitoring.

Planar-integrated single-crystalline perovskite photodetectors

KAUST Repository

Saidaminov, Makhsud I.; Adinolfi, Valerio; Comin, Riccardo; Abdelhady, Ahmed L.; Peng, Wei; Dursun, Ibrahim; Yuan, Mingjian; Hoogland, Sjoerd; Sargent, Edward H.; Bakr, Osman

2015-01-01

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals

Integrated Optical lightguide device

NARCIS (Netherlands)

Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

2005-01-01

In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

Integrated Optical lightguide device

NARCIS (Netherlands)

Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

2000-01-01

In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

Release strategies for making transferable semiconductor structures, devices and device components

Science.gov (United States)

Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

2014-11-25

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Recent trend in graphene for optoelectronics

International Nuclear Information System (INIS)

Chen, Yu-Bin; Liu, John S.; Lin Pang

2013-01-01

This study analyzes the scientific knowledge diffusion paths of graphene for optoelectronics (GFO), where graphene offers wide applications due to its thinness, high conductivity, excellent transparency, chemical stability, robustness, and flexibility. Our investigation is based on the main path analysis which establishes the citation links among the literature data in order to trace the significant sequence of knowledge development in this emerging field. We identify the main development paths of GFO up to the year 2012, along which a series of influential papers in this field are identified. The main path graph shows that knowledge diffusion occurs in key subareas, including reduced graphene oxide, chemical vapor deposition, and exfoliation techniques, which are developed for the preparation and applications of GFO. The applications cover solar cells, laser devices, sensing devices, and LCD. In addition, the main theme of GFO research evolves in sequence from small-graphene-sample preparation, to large-scale film growth, and onto prototype device fabrication. This evolution reflects a strong industrial demand for a new transparent–conductive film technology.

Simplified nonplanar wafer bonding for heterogeneous device integration

Science.gov (United States)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

Optoelectronic circuits in nanometer CMOS technology

CERN Document Server

Atef, Mohamed

2016-01-01

This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

Integrated optical circuit engineering IV; Proceedings of the Meeting, Cambridge, MA, Sept. 16, 17, 1986

Science.gov (United States)

Mentzer, Mark A.; Sriram, S.

The design and implementation of integrated optical circuits are discussed in reviews and reports. Topics addressed include lithium niobate devices, silicon integrated optics, waveguide phenomena, coupling considerations, processing technology, nonlinear guided-wave optics, integrated optics for fiber systems, and systems considerations and applications. Also included are eight papers and a panel discussion from an SPIE conference on the processing of guided-wave optoelectronic materials (held in Los Angeles, CA, on January 21-22, 1986).

Surface structure, optoelectronic properties and charge transport in ZnO nanocrystal/MDMO-PPV multilayer films.

Science.gov (United States)

Lian, Qing; Chen, Mu; Mokhtar, Muhamad Z; Wu, Shanglin; Zhu, Mingning; Whittaker, Eric; O'Brien, Paul; Saunders, Brian R

2018-05-07

Blends of semiconducting nanocrystals and conjugated polymers continue to attract major research interest because of their potential applications in optoelectronic devices, such as solar cells, photodetectors and light-emitting diodes. In this study we investigate the surface structure, morphological and optoelectronic properties of multilayer films constructed from ZnO nanocrystals (NCs) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV). The effects of layer number and ZnO concentration (C ZnO ) used on the multilayer film properties are investigated. An optimised solvent blend enabled well-controlled layers to be sequentially spin coated and the construction of multilayer films containing six ZnO NC (Z) and MDMO-PPV (M) layers (denoted as (ZM) 6 ). Contact angle data showed a strong dependence on C ZnO and indicated distinct differences in the coverage of MDMO-PPV by the ZnO NCs. UV-visible spectroscopy showed that the MDMO-PPV absorption increased linearly with the number of layers in the films and demonstrates highly tuneable light absorption. Photoluminescence spectra showed reversible quenching as well as a surprising red-shift of the MDMO-PPV emission peak. Solar cells were constructed to probe vertical photo-generated charge transport. The measurements showed that (ZM) 6 devices prepared using C ZnO = 14.0 mg mL -1 had a remarkably high open circuit voltage of ∼800 mV. The device power conversion efficiency was similar to that of a control bilayer device prepared using a much thicker MDMO-PPV layer. The results of this study provide insight into the structure-optoelectronic property relationships of new semiconducting multilayer films which should also apply to other semiconducting NC/polymer combinations.

Development of an integrated pointing device driver for the disabled.

Science.gov (United States)

Shih, Ching-Hsiang; Shih, Ching-Tien

2010-01-01

To help people with disabilities such as those with spinal cord injury (SCI) to effectively utilise commercial pointing devices to operate computers. This study proposes a novel method to integrate the functions of commercial pointing devices. Utilising software technology to develop an integrated pointing device driver (IPDD) for a computer operating system. The proposed IPDD has the following benefits: (1) it does not require additional hardware cost or circuit preservations, (2) it supports all standard interfaces of commercial pointing devices, including PS/2, USB and wireless interfaces and (3) it can integrate any number of devices. The IPDD can be selected and combined according to their physical restriction. The IPDD is a novel method of integrating commercial pointing devices. Through IPDD, people with disabilities can choose a suitable combination of commercial pointing devices to achieve full cursor control and optimise operational performance. In contrast with previous studies, the software-based solution does not require additional hardware or circuit preservations, and it can support unlimited devices. In summary, the IPDD has the benefits of flexibility, low cost and high-device compatibility.

Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

Science.gov (United States)

Horsley, Kimberly Anne

Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

Understanding and removing surface states limiting charge transport in TiO2 nanowire arrays for enhanced optoelectronic device performance.

Science.gov (United States)

Sheng, Xia; Chen, Liping; Xu, Tao; Zhu, Kai; Feng, Xinjian

2016-03-01

Charge transport within electrode materials plays a key role in determining the optoelectronic device performance. Aligned single-crystal TiO 2 nanowire arrays offer an ideal electron transport path and are expected to have higher electron mobility. Unfortunately, their transport is found not to be superior to that in nanoparticle films. Here we show that the low electron transport in rutile TiO 2 nanowires is mainly caused by surface traps in relatively deep energy levels, which cannot be removed by conventional approaches, such as oxygen annealing treatment. Moreover, we demonstrate an effective wet-chemistry approach to minimize these trap states, leading to over 20-fold enhancement in electron diffusion coefficient and 62% improvement in solar cell performance. On the basis of our results, the potential of TiO 2 NWs can be developed and well-utilized, which is significantly important for their practical applications.

Building devices from colloidal quantum dots.

Science.gov (United States)

Kagan, Cherie R; Lifshitz, Efrat; Sargent, Edward H; Talapin, Dmitri V

2016-08-26

The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials. Copyright © 2016, American Association for the Advancement of Science.

Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices

Science.gov (United States)

Berry Ann, N. J.; Rodak, L. E.; Kasarla, Kalyan; Yang, Nanying; Korakakis, D.

2005-10-01

In this research effort, epitaxial lateral overgrowth (ELOG) of GaN on sapphire was performed by low-pressure metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor. All ELOG growths were stopped prior to complete coalescence, and the resulting cross-sections were characterized by scanning electron microscopy (SEM). Both vertical {1120} and inclined sidewalls were observed. Inclined {112n}sidewalls of various angles (n 2-2.2) were found as previously reported in the literature1. Both one-step and two-step ELOG processes were used to control the overgrowth geometry. It was confirmed that sidewall formation and growth rates are closely correlated with multiple parameters including temperature and V/III ratio1. It was also found that substrate rotation greatly influences sidewall evolution and vertical growth rate. A conceptual model was begun to completely describe the ELOG process in a horizontal reactor. It is speculated that the different sidewalls observed as a function of substrate orientation result from variation in the local V/III ratio. Once developed, the final model will be used to control the sidewalls in the growth of ELOG structures for the fabrication of novel optoelectronic devices.

Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

Science.gov (United States)

Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

2016-03-22

Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.

Guided Growth of Horizontal ZnSe Nanowires and their Integration into High-Performance Blue-UV Photodetectors.

Science.gov (United States)

Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2015-07-15

Perfectly aligned horizontal ZnSe nano-wires are obtained by guided growth, and easily integrated into high-performance blue-UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large-scale integration of nanowires into optoelectronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photonics

Science.gov (United States)

1991-01-01

Optoelectronic materials and devices are examined. Optoelectronic devices, which generate, detect, modulate, or switch electromagnetic radiation are being developed for a variety of space applications. The program includes spatial light modulators, solid state lasers, optoelectronic integrated circuits, nonlinear optical materials and devices, fiber optics, and optical networking photovoltaic technology and optical processing.

Laser applications in the electronics and optoelectronics industry in Japan

Science.gov (United States)

Washio, Kunihiko

1999-07-01

This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

Integrated Photonic Devices Incorporating Low-Loss Fluorinated Polymer Materials

Directory of Open Access Journals (Sweden)

Hyung-Jong Lee

2011-06-01

Full Text Available Low-loss polymer materials incorporating fluorinated compounds have been utilized for the investigation of various functional optical devices useful for optical communication and optical sensor systems. Since reliability issues concerning the polymer device have been resolved, polymeric waveguide devices have been gradually adopted for commercial application systems. The two most successfully commercialized polymeric integrated optic devices, variable optical attenuators and digital optical switches, are reviewed in this paper. Utilizing unique properties of optical polymers which are not available in other optical materials, novel polymeric optical devices are proposed including widely tunable external cavity lasers and integrated optical current sensors.

Investigation, study and practice of optoelectronic MOOCs

Science.gov (United States)

Shi, Jianhua; Liu, Wei; Lei, Bing; Yao, Tianfu; Fu, Sihua

2017-08-01

MOOC(Massive Open Online Course) is a new teaching model that has been springing up since 2012. The typical characters are short teaching video, massive learners, flexible place and time to study, etc. Although MOOC is very popular now, opto-electronic MOOCs are not much enough to meet the need of online learners. In this paper, the phylogeny, the current situation and the characters of MOOC were described, the most famous MOOCs' websites, such as Udacity, Coursera, edX, Chinese College MOOC, xuetangx, were introduced, the opto-electronic MOOCs come from these famous MOOCs' website were investigated extensively and studied deeply, the "Application of Opto-electronic Technology MOOC" which was established by our group is introduced, and some conclusions are obtained. These conclusions can give some suggestions to the online learners who are interested in opto-electronic and the teachers who are teaching the opto-electronic curriculums. The preparation of "Opto-electronic Technology MOOC" is described in short.

Optoelectronic Device Integration in Silicon (OpSIS)

Science.gov (United States)

2015-10-26

silicon-on-insulator," Opt. Express 22, 17872-17879 (2014) Y. Yang, C. Galland, Y. Liu, K. Tan , R. Ding, Q. Li, K. Bergman, T. Baehr-Jones, M...Jaeger, Nicolas AF; Chrostowski, Lukas; “Electrically tunable resonant filters in phase-shifted contra- directional couplers” IEEE Group IV Photonics... Nicolas AF; Chrostowski, Lukas; “Silicon photonic grating-assisted, contra-directional couplers” Optics express Vol. 21, No. 3; 3633-3650 (2013

Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

International Nuclear Information System (INIS)

Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Ha Park, Sung; Jeon, Sohee; Jeong, Jun-Ho

2017-01-01

Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors. (paper)

Atomic layer deposition for graphene device integration

NARCIS (Netherlands)

Vervuurt, R.H.J.; Kessels, W.M.M.; Bol, A.A.

2017-01-01

Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD)

Integration in design and manufacturing of polymer smart devices

NARCIS (Netherlands)

Bolt, P.J.; Zwart, R.M. de; Tacken, R.A.; Rendering, H.

2009-01-01

Integration of functions in single components is pursued in order to manufacture smaller and smarter polymer micro devices at less cost, through e.g. less assembly steps. It requires integration on both product and production side. This paper addresses the use of molded interconnect device (MID)

Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

Science.gov (United States)

2014-01-01

Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

Cultivation of students' engineering designing ability based on optoelectronic system course project

Science.gov (United States)

Cao, Danhua; Wu, Yubin; Li, Jingping

2017-08-01

We carry out teaching based on optoelectronic related course group, aiming at junior students majored in Optoelectronic Information Science and Engineering. " Optoelectronic System Course Project " is product-designing-oriented and lasts for a whole semester. It provides a chance for students to experience the whole process of product designing, and improve their abilities to search literature, proof schemes, design and implement their schemes. In teaching process, each project topic is carefully selected and repeatedly refined to guarantee the projects with the knowledge integrity, engineering meanings and enjoyment. Moreover, we set up a top team with professional and experienced teachers, and build up learning community. Meanwhile, the communication between students and teachers as well as the interaction among students are taken seriously in order to improve their team-work ability and communicational skills. Therefore, students are not only able to have a chance to review the knowledge hierarchy of optics, electronics, and computer sciences, but also are able to improve their engineering mindset and innovation consciousness.

Compensating Unknown Time-Varying Delay in Opto-Electronic Platform Tracking Servo System

Directory of Open Access Journals (Sweden)

Ruihong Xie

2017-05-01

Full Text Available This paper investigates the problem of compensating miss-distance delay in opto-electronic platform tracking servo system. According to the characteristic of LOS (light-of-sight motion, we setup the Markovian process model and compensate this unknown time-varying delay by feed-forward forecasting controller based on robust H∞ control. Finally, simulation based on double closed-loop PI (Proportion Integration control system indicates that the proposed method is effective for compensating unknown time-varying delay. Tracking experiments on the opto-electronic platform indicate that RMS (root-mean-square error is 1.253 mrad when tracking 10° 0.2 Hz signal.

Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer.

Science.gov (United States)

Zilberman, Yael; Sonkusale, Sameer R

2015-05-15

We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels. Copyright © 2014 Elsevier B.V. All rights reserved.

Effects of Long-Term Static Bending Deformation on a Barrier Thin Film for Flexible Organic Optoelectronic Devices

Directory of Open Access Journals (Sweden)

Hung-I Lu

2018-03-01

Full Text Available The objective of this study is to investigate the effect of long-term static bending on the encapsulation properties of a commercial barrier thin film for flexible optoelectronic devices. Encapsulation properties of the barrier film are evaluated under long-term static bending at various radii of curvature. Experimental results reveal that no significantly detrimental effect on the water vapor transmission rate (WVTR at 40 °C and 90% RH is found for compressive bending up to 1000 h and for tensile bending up to 100 h with a radius of curvature of 5 mm or larger. However, WVTR of the barrier thin film is significantly increased and cracks are found in the barrier film when subjected to tensile bending of a radius of 10 mm or 5 mm for 1000 h. The expected WVTR of the given barrier thin film is numerically computed using a three-dimensional (3D finite element model. Numerical results indicate that, with the presence of cracks in the barrier thin film, the WVTR increases for an apparent increase in moisture entrances. The WVTR calculated by the 3D cracking model concurs with the experimental results.

Flexible manufacturing for photonics device assembly

Science.gov (United States)

Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

Energy Technology Data Exchange (ETDEWEB)

Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

2016-07-18

Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

Science.gov (United States)

Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

2012-12-17

An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

Science.gov (United States)

Collis, Ward J.; Abul-Fadl, Ali

1988-01-01

The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

Implantable optoelectronic probes for in vivo optogenetics

Science.gov (United States)

Iseri, Ege; Kuzum, Duygu

2017-06-01

More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

Hybrid integrated sensor for position measurement

International Nuclear Information System (INIS)

Schmidt, B.; Schott, H.; Just, H.-J.

1986-01-01

The design, fabrication and performance of an integrated two-dimensional position sensitive photodetector are presented. The optoelectronic device used as sensitive element in the circuit is a full area position sensitive photodiode (PPD) with high linearity over the full sensitive area. The PPD is integrated with the analog electronics in a hybrid circuit using thick film technology. The analog electronics includes the signal amplification and the signal conditioning to form the output signals proportional to the light beam center position at the sensor surface and an output signal proportional to the light beam intensity. Using hybrid integration a new position sensitive transducer is developed giving output signals, transmiting in large distances without problems and driving directly actuators in any control system

Optoelectronic line transmission an introduction to fibre optics

CERN Document Server

Tricker, Raymond L

2013-01-01

Optoelectronic Line Transmission: An Introduction to Fibre Optics presents a basic introduction as well as a background reference manual on fiber optic transmission. The book discusses the basic principles of optical line transmission; the advantages and disadvantages of optical fibers and optoelectronic signalling; the practical applications of optoelectronics; and the future of optoelectronics. The text also describes the theories of optical line transmission; fibers and cables for optical transmission; transmitters including light-emitting diodes and lasers; and receivers including photodi

Smart Optoelectronic Sensors and Intelligent Sensor Systems

Directory of Open Access Journals (Sweden)

Sergey Y. YURISH

2012-03-01

Full Text Available Light-to-frequency converters are widely used in various optoelectronic sensor systems. However, a further frequency-to-digital conversion is a bottleneck in such systems due to a broad frequency range of light-to-frequency converters’ outputs. This paper describes an effective OEM design approach, which can be used for smart and intelligent sensor systems design. The design is based on novel, multifunctional integrated circuit of Universal Sensors & Transducers Interface especially designed for such sensor applications. Experimental results have confirmed an efficiency of this approach and high metrological performances.

Monolithically Integrated Ge-on-Si Active Photonics

Directory of Open Access Journals (Sweden)

Jifeng Liu

2014-07-01

Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

Compliant heterogeneous assemblies of micro-VCSELs as a new materials platform for integrated optoelectronics

Science.gov (United States)

Kang, Dongseok; Lee, Sung-Min; Kwong, Anthony; Yoon, Jongseung

2015-03-01

Despite many unique advantages, vertical cavity surface emitting lasers (VCSELs) have been available mostly on rigid, planar wafers over restricted areas, thereby limiting their usage for applications that can benefit from large-scale, programmable assemblies, hybrid integration with dissimilar materials and devices, or mechanically flexible constructions. Here, materials design and fabrication strategies that address these limitations of conventional VCSELs are presented. Specialized design of epitaxial materials and etching processes, together with printing-based deterministic assemblies and substrate thermal engineering, enabled defect-free release of microscale VCSELs and their device- and circuit-level implementation on non-native, flexible substrates with performance comparable to devices on the growth substrate.

Nanophotonic integrated circuits from nanoresonators grown on silicon.

Science.gov (United States)

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9

KAUST Repository

Abulikemu, Mutalifu

2016-07-14

Lead halide perovskite materials have shown excellent optoelectronic as well as photovoltaic properties. However, the presence of lead and the chemical instability relegate lead halide perovskites to research applications only. Here, we investigate an emerging lead-free and air stable compound (CH3NH3)3Bi2I9 as a non-toxic potential alternative to lead halide perovskites. We have synthesized thin films, powders and millimeter-scale single crystals of (CH3NH3)3Bi2I9 and investigated their structural and optoelectronic properties. We demonstrate that the degree of crystallinity strongly affects the optoelectronic properties of the material, resulting in significantly different band gaps in polycrystalline thin films and single crystals. Surface photovoltage spectroscopy reveals outstanding photocharge generation in the visible (<700 nm), while transient absorption spectroscopy and space charge limited current measurements point to a long exciton lifetime and a high carrier mobility, respectively, similar to lead halide perovskites, pointing to the remarkable potential of this semiconductor. Photovoltaic devices fabricated using this material yield low power conversion efficiency (PCE) to date, but the PCE is expected to rise with improvements in thin film processing and device engineering.

CMOS and BiCMOS process integration and device characterization

CERN Document Server

El-Kareh, Badih

2009-01-01

Covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. This book also covers silicon devices and integrated process technologies. It discusses modern silicon devices, their characteristics, and interactions with process parameters.

Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

Science.gov (United States)

Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

2017-12-01

The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

Integrated Solar-Energy-Harvesting and -Storage Device

Science.gov (United States)

whitacre, Jay; Fleurial, Jean-Pierre; Mojarradi, Mohammed; Johnson, Travis; Ryan, Margaret Amy; Bugga, Ratnakumar; West, William; Surampudi, Subbarao; Blosiu, Julian

2004-01-01

A modular, integrated, completely solid-state system designed to harvest and store solar energy is under development. Called the power tile, the hybrid device consists of a photovoltaic cell, a battery, a thermoelectric device, and a charge-control circuit that are heterogeneously integrated to maximize specific energy capacity and efficiency. Power tiles could be used in a variety of space and terrestrial environments and would be designed to function with maximum efficiency in the presence of anticipated temperatures, temperature gradients, and cycles of sunlight and shadow. Because they are modular in nature, one could use a single power tile or could construct an array of as many tiles as needed. If multiple tiles are used in an array, the distributed and redundant nature of the charge control and distribution hardware provides an extremely fault-tolerant system. The figure presents a schematic view of the device.

Optoelectronic analogue signal transfer for LHC detectors, 1991

CERN Document Server

Dowell, John D; Homer, R J; Jovanovic, P; Kenyon, I; Staley, R; Webster, K; Da Via, C; Feyt, J; Nappey, P; Stefanini, G; Dwir, B; Reinhart, F K; Davies, J; Green, N; Stewart, W; Young, T; Hall, G; Akesson, T; Jarlskog, G; Kröll, S; Nickerson, R; Jaroslawski, S; CERN. Geneva. Detector Research and Development Committee

1991-01-01

We propose to study and develop opto-electronic analogue front-ends based on electro-optic intensity modulators. These devices translate the detector electrical analogue signals into optical signals which are then transferred via optical fibres to photodetector receivers at the remote readout. In comparison with conventional solutions based on copper cables, this technique offers the advantages of high speed, very low power dissipation and transmission losses, compactness and immunity to electromagnetic interference. The linearity and dynamic range that can be obtained are more than adequate for central tracking detectors, and the proposed devices have considerable radiation- hardness capabilities. The large bandwidth and short transit times offer possibilities for improved triggering schemes. The proposed R&D programme is aimed at producing multi-channel "demonstrator" units for evaluation both in laboratory and beam tests. This will allow the choice of the most effective technology. A detailed study wil...

Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment

Science.gov (United States)

Yang, Hae In; Park, Seonyoung; Choi, Woong

2018-06-01

We report the modification of the optoelectronic properties of mechanically-exfoliated single layer MoS2 by ultraviolet-ozone exposure. Photoluminescence emission of pristine MoS2 monotonically decreased and eventually quenched as ultraviolet-ozone exposure time increased from 0 to 10 min. The reduction of photoluminescence emission accompanied reduction of Raman modes, suggesting structural degradation in ultraviolet-ozone exposed MoS2. Analysis with X-ray photoelectron spectroscopy revealed that the formation of Ssbnd O and Mosbnd O bonding increases with ultraviolet-ozone exposure time. Measurement of electrical transport properties of MoS2 in a bottom-gate thin-film transistor configuration suggested the presence of insulating MoO3 after ultraviolet-ozone exposure. These results demonstrate that ultraviolet-ozone exposure can significantly influence the optoelectronic properties of single layer MoS2, providing important implications on the application of MoS2 and other two-dimensional materials into optoelectronic devices.

Opto-electronic devices with nanoparticles and their assemblies

Science.gov (United States)

Nguyen, Chieu Van

Nanotechnology is a fast growing field; engineering matters at the nano-meter scale. A key nanomaterial is nanoparticles (NPs). These sub-wavelength (background noise. The second device is based on a one-dimensional (1-D) self-directed self-assembly of Au NPs mediated by dielectric materials. Depending on the coverage density of the Au NPs assembly deposited on the device, electronic emission was observed at ultra-low bias of 40V, leading to low-power plasma generation in air at atmospheric pressure. Light emitted from the plasma is apparent to the naked eyes. Similarly, 1-D self-assembly of Au NPs mediated by iron oxide was fabricated and exhibits ferro-magnetic behavior. The multi-functional 1-D self-assembly of Au NPs has great potential in modern electronics such as solid state lighting, plasma-based nanoelectronics, and memory devices.

Integrating Touch-Enabled and Mobile Devices into Contemporary Mathematics Education

Science.gov (United States)

Meletiou-Mavrotheris, Maria, Ed.; Mavrou, Katerina, Ed.; Paparistodemou, Efi, Ed.

2015-01-01

Despite increased interest in mobile devices as learning tools, the amount of available primary research studies on their integration into mathematics teaching and learning is still relatively small due to the novelty of these technologies. "Integrating Touch-Enabled and Mobile Devices into Contemporary Mathematics Education" presents…

Synthesis of Mn{sub 0.04}Cu{sub 0.05}Zn{sub 0.91}O nanorod and its application in optoelectronic switching device

Energy Technology Data Exchange (ETDEWEB)

Layek, Animesh, E-mail: layekanimesh@gmail.com [Department of Physics, Bejoy Narayan Mahavidyalaya, Itachuna, Hooghly-712147 (India); Middya, Somnath [Department of Physics, Bankim Sardar College, Tangrakhali, South 24-paraganas, pin-743329 (India)

2016-05-06

The optical absorption of ZnO nanorod had been reduced by introducing Mn as doping element. In this present study the optical absorption of ZnO nanorod has been improved by simultaneous doping of the element Mn and Cu. The hydrothermal reaction was adopted for the synthesis. The electrical conductivity and the optical band gap of the Mn{sub 0.04}Cu{sub 0.05}Zn{sub 0.91}O were measured as 1.16 × 10{sup −3}Scm{sup −1} and 3.07eV respectively, assigned the semiconductor behavior. The light induced rectification in time dependent current response characteristic of Al/ Mn{sub 0.04}Cu{sub 0.05}Zn{sub 0.91}O/ITO was investigated to check the performance of the composite in opto-electronic switching device.

A hybrid approach to device integration on a genetic analysis platform

International Nuclear Information System (INIS)

Brennan, Des; Justice, John; Aherne, Margaret; Galvin, Paul; Jary, Dorothee; Kurg, Ants; Berik, Evgeny; Macek, Milan

2012-01-01

Point-of-care (POC) systems require significant component integration to implement biochemical protocols associated with molecular diagnostic assays. Hybrid platforms where discrete components are combined in a single platform are a suitable approach to integration, where combining multiple device fabrication steps on a single substrate is not possible due to incompatible or costly fabrication steps. We integrate three devices each with a specific system functionality: (i) a silicon electro-wetting-on-dielectric (EWOD) device to move and mix sample and reagent droplets in an oil phase, (ii) a polymer microfluidic chip containing channels and reservoirs and (iii) an aqueous phase glass microarray for fluorescence microarray hybridization detection. The EWOD device offers the possibility of fully integrating on-chip sample preparation using nanolitre sample and reagent volumes. A key challenge is sample transfer from the oil phase EWOD device to the aqueous phase microarray for hybridization detection. The EWOD device, waveguide performance and functionality are maintained during the integration process. An on-chip biochemical protocol for arrayed primer extension (APEX) was implemented for single nucleotide polymorphism (SNiP) analysis. The prepared sample is aspirated from the EWOD oil phase to the aqueous phase microarray for hybridization. A bench-top instrumentation system was also developed around the integrated platform to drive the EWOD electrodes, implement APEX sample heating and image the microarray after hybridization. (paper)

The Electrical and Optical Properties of Organometal Halide Perovskites Relevant to Optoelectronic Performance

KAUST Repository

Adinolfi, Valerio

2017-10-12

Organometal halide perovskites are under intense study for use in optoelectronics. Methylammonium and formamidinium lead iodide show impressive performance as photovoltaic materials; a premise that has spurred investigations into light-emitting devices and photodetectors. Herein, the optical and electrical material properties of organometal halide perovskites are reviewed. An overview is given on how the material composition and morphology are tied to these properties, and how these properties ultimately affect device performance. Material attributes and techniques used to estimate them are analyzed for different perovskite materials, with a particular focus on the bandgap, mobility, diffusion length, carrier lifetime, and trap-state density.

Research on the processing technology of medium-caliber aspheric lens in the optoelectronic integrated test system

Science.gov (United States)

Liu, Dan; Yu, Xin-ying; Wang, Wei

2016-10-01

In the optoelectronic integrated test system, surface profile and finish of the optical element are put forward higher request. Taking an aspherical quartz glass lens with a diameter of 200mm as example, taking Preston hypothesis as the theoretical basis, analyze the influence of surface quality of various process parameters, including the workpiece and the tool axis spindle speed, wheel type, concentration polishing, polishing mold species, dwell time, polishing pressure and other parameters. Using CNC method for the surface profile and surface quality of the lens were investigated. Taking profilometer measurement results as a guide, by testing and simulation analysis, process parameters were improved constantly in the process of manufacturing. Mid and high frequency error were trimmed and improved so that the surface form gradually converged to the required accuracy. The experimental results show that the final accuracy of the surface is less than 2µm and the surface finish is, which fulfils the accuracy requirement of aspherical focusing lens in optical system.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Directory of Open Access Journals (Sweden)

Sandro Rao

2016-01-01

Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

CERN Document Server

Li, Simon

2012-01-01

Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

Optical technology for microwave applications VI and optoelectronic signal processing for phased-array antennas III; Proceedings of the Meeting, Orlando, FL, Apr. 20-23, 1992

Science.gov (United States)

Yao, Shi-Kay; Hendrickson, Brian M.

The following topics related to optical technology for microwave applications are discussed: advanced acoustooptic devices, signal processing device technologies, optical signal processor technologies, microwave and optomicrowave devices, advanced lasers and sources, wideband electrooptic modulators, and wideband optical communications. The topics considered in the discussion of optoelectronic signal processing for phased-array antennas include devices, signal processing, and antenna systems.

Extended device profiles and testing procedures for the approval process of integrated medical devices using the IEEE 11073 communication standard.

Science.gov (United States)

Janß, Armin; Thorn, Johannes; Schmitz, Malte; Mildner, Alexander; Dell'Anna-Pudlik, Jasmin; Leucker, Martin; Radermacher, Klaus

2018-02-23

Nowadays, only closed and proprietary integrated operating room systems (IORS) from big manufacturers are available on the market. Hence, the interconnection of components from third-party vendors is only possible with increased time and costs. In the context of the German Federal Ministry of Education and Research (BMBF)-funded project OR.NET (2012-2016), the open integration of medical devices from different manufacturers was addressed. An integrated operating theater based on the open communication standard IEEE 11073 shall give clinical operators the opportunity to choose medical devices independently of the manufacturer. This approach would be advantageous especially for hospital operators and small- and medium-sized enterprises (SME) of medical devices. Actual standards and concepts regarding technical feasibility and the approval process do not cope with the requirements for a modular integration of medical devices in the operating room (OR), based on an open communication standard. Therefore, innovative approval strategies and corresponding certification and test procedures, which cover actual legal and normative standards, have to be developed in order to support the future risk management and the usability engineering process of open integrated medical devices in the OR. The use of standardized device and service profiles and a three-step testing procedure, including conformity, interoperability and integration tests are described in this paper and shall support the manufacturers to integrate their medical devices without disclosing the medical devices' risk analysis and related confidential expertise or proprietary information.

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

International Nuclear Information System (INIS)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.

2009-01-01

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

2009-06-15

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Integrated multiscale modeling of molecular computing devices

International Nuclear Information System (INIS)

Cummings, Peter T; Leng Yongsheng

2005-01-01

Molecular electronics, in which single organic molecules are designed to perform the functions of transistors, diodes, switches and other circuit elements used in current siliconbased microelecronics, is drawing wide interest as a potential replacement technology for conventional silicon-based lithographically etched microelectronic devices. In addition to their nanoscopic scale, the additional advantage of molecular electronics devices compared to silicon-based lithographically etched devices is the promise of being able to produce them cheaply on an industrial scale using wet chemistry methods (i.e., self-assembly from solution). The design of molecular electronics devices, and the processes to make them on an industrial scale, will require a thorough theoretical understanding of the molecular and higher level processes involved. Hence, the development of modeling techniques for molecular electronics devices is a high priority from both a basic science point of view (to understand the experimental studies in this field) and from an applied nanotechnology (manufacturing) point of view. Modeling molecular electronics devices requires computational methods at all length scales - electronic structure methods for calculating electron transport through organic molecules bonded to inorganic surfaces, molecular simulation methods for determining the structure of self-assembled films of organic molecules on inorganic surfaces, mesoscale methods to understand and predict the formation of mesoscale patterns on surfaces (including interconnect architecture), and macroscopic scale methods (including finite element methods) for simulating the behavior of molecular electronic circuit elements in a larger integrated device. Here we describe a large Department of Energy project involving six universities and one national laboratory aimed at developing integrated multiscale methods for modeling molecular electronics devices. The project is funded equally by the Office of Basic

Granulometric composition study of mineral resources using opto-electronic devices and Elsieve software system

Directory of Open Access Journals (Sweden)

Kaminski Stanislaw

2016-01-01

Full Text Available The use of mechanical sieves has a great impact on measurement results because occurrence of anisometric particles causes undercounting the average size. Such errors can be avoided by using opto-electronic measuring devices that enable measurement of particles from 10 μm up to a few dozen millimetres in size. The results of measurement of each particle size fraction are summed up proportionally to its weight with the use of Elsieve software system and for every type of material particle-size distribution can be obtained. The software allows further statistical interpretation of the results. Beam of infrared radiation identifies size of particles and counts them precisely. Every particle is represented by an electronic impulse proportional to its size. Measurement of particles in aqueous suspension that replaces the hydrometer method can be carried out by using the IPS L analyser (range from 0.2 to 600 μm. The IPS UA analyser (range from 0.5 to 2000 μm is designed for measurement in the air. An ultrasonic adapter enables performing measurements of moist and aggregated particles from 0.5 to 1000 μm. The construction and software system allow to determine second dimension of the particle, its shape coefficient and specific surface area. The AWK 3D analyser (range from 0.2 to 31.5 mm is devoted to measurement of various powdery materials with subsequent determination of particle shape. The AWK B analyser (range from 1 to 130 mm measures materials of thick granulation and shape of the grains. The presented method of measurement repeatedly accelerates and facilitates study of granulometric composition.

Ultrafast Graphene Photonics and Optoelectronics

Science.gov (United States)

2017-04-14

AFRL-AFOSR-JP-TR-2017-0032 Ultrafast Graphene Photonics and Optoelectronics Kuang-Hsiung Wu National Chiao Tung University Final Report 04/14/2017...DATES COVERED (From - To) 18 Apr 2013 to 17 Apr 2016 4. TITLE AND SUBTITLE Ultrafast Graphene Photonics and Optoelectronics 5a.  CONTRACT NUMBER 5b...Prescribed by ANSI Std. Z39.18 Final Report for AOARD Grant FA2386-13-1-4022 “Ultrafast Graphene Photonics and Optoelectronics” Date May 23th, 2016

High Resolution Tracking Devices Based on Capillaries Filled with Liquid Scintillator

CERN Multimedia

Bonekamper, D; Vassiltchenko, V; Wolff, T

2002-01-01

%RD46 %title\\\\ \\\\The aim of the project is to develop high resolution tracking devices based on thin glass capillary arrays filled with liquid scintillator. This technique provides high hit densities and a position resolution better than 20 $\\mu$m. Further, their radiation hardness makes them superior to other types of tracking devices with comparable performance. Therefore, the technique is attractive for inner tracking in collider experiments, microvertex devices, or active targets for short-lived particle detection. High integration levels in the read-out based on the use of multi-pixel photon detectors and the possibility of optical multiplexing allow to reduce considerably the number of output channels, and, thus, the cost for the detector.\\\\ \\\\New optoelectronic devices have been developed and tested: the megapixel Electron Bombarded CCD (EBCCD), a high resolution image-detector having an outstanding capability of single photo-electron detection; the Vacuum Image Pipeline (VIP), a high-speed gateable pi...

Integrated biocircuits: engineering functional multicellular circuits and devices

Science.gov (United States)

Prox, Jordan; Smith, Tory; Holl, Chad; Chehade, Nick; Guo, Liang

2018-04-01

Objective. Implantable neurotechnologies have revolutionized neuromodulatory medicine for treating the dysfunction of diseased neural circuitry. However, challenges with biocompatibility and lack of full control over neural network communication and function limits the potential to create more stable and robust neuromodulation devices. Thus, we propose a platform technology of implantable and programmable cellular systems, namely Integrated Biocircuits, which use only cells as the functional components of the device. Approach. We envision the foundational principles for this concept begins with novel in vitro platforms used for the study and reconstruction of cellular circuitry. Additionally, recent advancements in organoid and 3D culture systems account for microenvironment factors of cytoarchitecture to construct multicellular circuits as they are normally formed in the brain. We explore the current state of the art of these platforms to provide knowledge of their advancements in circuit fabrication and identify the current biological principles that could be applied in designing integrated biocircuit devices. Main results. We have highlighted the exemplary methodologies and techniques of in vitro circuit fabrication and propose the integration of selected controllable parameters, which would be required in creating suitable biodevices. Significance. We provide our perspective and propose new insights into the future of neuromodulaion devices within the scope of living cellular systems that can be applied in designing more reliable and biocompatible stimulation-based neuroprosthetics.

Integrated circuit devices in control systems of coal mining complexes

Energy Technology Data Exchange (ETDEWEB)

1983-01-01

Systems of automatic monitoring and control of coal mining complexes developed in the 1960's used electromagnetic relays, thyristors, and flip-flops on transistors of varying conductivity. The circuits' designers, devoted much attention to ensuring spark safety, lowering power consumption, and raising noise immunity and repairability of functional devices. The fast development of integrated circuitry led to the use of microelectronic components in most devices of mine automation. An analysis of specifications and experimental research into integrated circuits (IMS) shows that the series K 176 IMS components made by CMOS technology best meet mine conditions of operation. The use of IMS devices under mine conditions has demonstrated their high reliability. Further development of integrated circuitry involve using microprocessors and microcomputers. (SC)

Digital optical computers at the optoelectronic computing systems center

Science.gov (United States)

Jordan, Harry F.

1991-01-01

The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

Integrated microfluidic device for single-cell trapping and spectroscopy

KAUST Repository

Liberale, Carlo

2013-02-13

Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

Integrated microfluidic device for single-cell trapping and spectroscopy

KAUST Repository

Liberale, Carlo; Cojoc, G.; Bragheri, F.; Minzioni, P.; Perozziello, G.; La Rocca, R.; Ferrara, L.; Rajamanickam, V.; Di Fabrizio, Enzo M.; Cristiani, I.

2013-01-01

Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

Optoelectronics technologies for Virtual Reality systems

Science.gov (United States)

Piszczek, Marek; Maciejewski, Marcin; Pomianek, Mateusz; Szustakowski, Mieczysław

2017-08-01

Solutions in the field of virtual reality are very strongly associated with optoelectronic technologies. This applies to both process design and operation of VR applications. Technologies such as 360 cameras and 3D scanners significantly improve the design work. What is more, HMD displays with high field of view or optoelectronic Motion Capture systems and 3D cameras guarantee an extraordinary experience in immersive VR applications. This article reviews selected technologies from the perspective of their use in a broadly defined process of creating and implementing solutions for virtual reality. There is also the ability to create, modify and adapt new approaches that show team own work (SteamVR tracker). Most of the introduced examples are effectively used by authors to create different VR applications. The use of optoelectronic technology in virtual reality is presented in terms of design and operation of the system as well as referring to specific applications. Designers and users of VR systems should take a close look on new optoelectronics solutions, as they can significantly contribute to increased work efficiency and offer completely new opportunities for virtual world reception.

Plated lamination structures for integrated magnetic devices

Science.gov (United States)

Webb, Bucknell C.

2014-06-17

Semiconductor integrated magnetic devices such as inductors, transformers, etc., having laminated magnetic-insulator stack structures are provided, wherein the laminated magnetic-insulator stack structures are formed using electroplating techniques. For example, an integrated laminated magnetic device includes a multilayer stack structure having alternating magnetic and insulating layers formed on a substrate, wherein each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by an insulating layer, and a local shorting structure to electrically connect each magnetic layer in the multilayer stack structure to an underlying magnetic layer in the multilayer stack structure to facilitate electroplating of the magnetic layers using an underlying conductive layer (magnetic or seed layer) in the stack as an electrical cathode/anode for each electroplated magnetic layer in the stack structure.

Resonant infrared laser deposition of polymer-nanocomposite materials for optoelectronic applications

Science.gov (United States)

Park, Hee K.; Schriver, Kenneth E.; Haglund, Richard F.

2011-11-01

Polymers find a number of potentially useful applications in optoelectronic devices. These include both active layers, such as light-emitting polymers and hole-transport layers, and passive layers, such as polymer barrier coatings and light-management films. This paper reports the experimental results for polymer films deposited by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) and resonant infrared pulsed laser deposition (RIR-PLD) for commercial optoelectronic device applications. In particular, light-management films, such as anti-reflection coatings, require refractive-index engineering of a material. However, refractive indices of polymers fall within a relatively narrow range, leading to major efforts to develop both low- and high-refractive-index polymers. Polymer nanocomposites can expand the range of refractive indices by incorporating low- or high-refractive-index nanoscale materials. RIR-MAPLE is an excellent technique for depositing polymer-nanocomposite films in multilayer structures, which are essential to light-management coatings. In this paper, we report our efforts to engineer the refractive index of a barrier polymer by combining RIR-MAPLE of nanomaterials (for example, high refractive-index TiO2 nanoparticles) and RIR-PLD of host polymer. In addition, we report on the properties of organic and polymer films deposited by RIR-MAPLE and/or RIR-PLD, such as Alq3 [tris(8-hydroxyquinoline) aluminum] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)]. Finally, the challenges and potential for commercializing RIR-MAPLE/PLD, such as industrial scale-up issues, are discussed.

76 FR 58041 - Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof; Notice...

Science.gov (United States)

2011-09-19

... Integrated Circuit Devices and Components Thereof; Notice of Institution of Investigation; Institution of... integrated circuit devices and components thereof by reason of infringement of certain claims of U.S. Patent... after importation of certain digital televisions containing integrated circuit devices and components...

Reduced Graphene Oxide-Cadmium Zinc Sulfide Nanocomposite with Controlled Band Gap for Large-Area Thin-Film Optoelectronic Device Application

Science.gov (United States)

Ibrahim, Sk; Chakraborty, Koushik; Pal, Tanusri; Ghosh, Surajit

2017-12-01

Herein, we report the one pot single step solvothermal synthesis of reduced grapheme oxide-cadmium zinc sulfide (RGO-Cd0.5Zn0.5S) composite. The reduction in graphene oxide (GO), synthesis of Cd0.5Zn0.5S (mentioned as CdZnS in the text) nanorod and decoration of CdZnS nanorods onto RGO sheet were done simultaneously. The structural, morphological and optical properties were studied thoroughly by different techniques, such as XRD, TEM, UV-Vis and PL. The PL intensity of CdZnS nanorods quenches significantly after the attachment of RGO, which confirms photoinduced charge transformation from CdZnS nanorods to RGO sheet through the interface of RGO-CdZnS. An excellent photocurrent generation in RGO-CdZnS thin-film device has been observed under simulated solar light irradiation. The photocurrent as well as photosensitivity increases linearly with the solar light intensity for all the composites. Our study establishes that the synergistic effect of RGO and CdZnS in the composite is capable of getting promising applications in the field of optoelectronic devising.

Roll-to-roll embedded conductive structures integrated into organic photovoltaic devices

International Nuclear Information System (INIS)

Van de Wiel, H J; Galagan, Y; Van Lammeren, T J; De Riet, J F J; Gilot, J; Nagelkerke, M G M; Lelieveld, R H C A T; Shanmugam, S; Pagudala, A; Groen, W A; Hui, D

2013-01-01

Highly conductive screen printed metallic (silver) structures (current collecting grids) combined with poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) are a viable replacement for indium tin oxide (ITO) and inkjet printed silver as transparent electrode materials. To provide successful integration into organic photovoltaic (OPV) devices, screen printed silver current collecting grids should be embedded into a substrate to avoid topology issues. In this study micron-thick conductive structures are embedded and integrated into OPV devices. The embedded structures are produced roll-to-roll with optimized process settings and materials. Topology measurements show that the embedded grids are well suited for integration into OPV devices since the surface is almost without spikes and has low surface roughness. JV measurements of OPV devices with embedded structures on a polyethylene terephthalate/silicon nitride (PET/SiN) substrate show an efficiency of 2.15%, which is significantly higher than identical flexible devices with ITO (1.02%) and inkjet printed silver (1.48%). The use of embedded screen printed silver instead of ITO and inkjet printed silver in OPV devices will allow for higher efficiency devices which can be produced with larger design and process freedom. (paper)

A whole-process progressive training mode to foster optoelectronic students' innovative practical ability

Science.gov (United States)

Zhong, Hairong; Xu, Wei; Hu, Haojun; Duan, Chengfang

2017-08-01

This article analyzes the features of fostering optoelectronic students' innovative practical ability based on the knowledge structure of optoelectronic disciplines, which not only reveals the common law of cultivating students' innovative practical ability, but also considers the characteristics of the major: (1) The basic theory is difficult, and the close combination of science and technology is obvious; (2)With the integration of optics, mechanics, electronics and computer, the system technology is comprehensive; (3) It has both leading-edge theory and practical applications, so the benefit of cultivating optoelectronic students is high ; (4) The equipment is precise and the practice is costly. Considering the concept and structural characteristics of innovative and practical ability, and adhering to the idea of running practice through the whole process, we put forward the construction of three-dimensional innovation and practice platform which consists of "Synthetically Teaching Laboratory + Innovation Practice Base + Scientific Research Laboratory + Major Practice Base + Joint Teaching and Training Base", and meanwhile build a whole-process progressive training mode to foster optoelectronic students' innovative practical ability, following the process of "basic experimental skills training - professional experimental skills training - system design - innovative practice - scientific research project training - expanded training - graduation project": (1) To create an in - class practical ability cultivation environment that has distinctive characteristics of the major, with the teaching laboratory as the basic platform; (2) To create an extra-curricular innovation practice activities cultivation environment that is closely linked to the practical application, with the innovation practice base as a platform for improvement; (3) To create an innovation practice training cultivation environment that leads the development of cutting-edge, with the scientific

An introduction to optoelectronic sensors

CERN Document Server

Tajani, Antonella; Cutolo, Antonello

2009-01-01

This invaluable book offers a comprehensive overview of the technologies and applications of optoelectronic sensors. Based on the R&D experience of more than 70 engineers and scientists, highly representative of the Italian academic and industrial community in this area, this book provides a broad and accurate description of the state-of-the-art optoelectronic technologies for sensing. The most innovative approaches, such as the use of photonic crystals, squeezed states of light and microresonators for sensing, are considered. Application areas range from environment to medicine and healthcare

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

Science.gov (United States)

Zhang, Congcong; Chen, Penglei; Hu, Wenping

2016-03-09

Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Energy Technology Data Exchange (ETDEWEB)

Shah, V. A., E-mail: vishal.shah@warwick.ac.uk; Gammon, P. M. [Department of Engineering, The University of Warwick, Coventry CV4 7AL (United Kingdom); Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom); Rhead, S. D.; Halpin, J. E.; Trushkevych, O.; Wilson, N. R.; Myronov, M.; Edwards, R. S.; Patchett, D. H.; Allred, P. S.; Prest, M. J.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R. [Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom); Chávez-Ángel, E. [ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Department of Physics, UAB, 08193 Bellaterra (Barcelona) (Spain); Shchepetov, A.; Prunnila, M. [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT, Espoo (Finland); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); and others

2014-04-14

A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm{sup 2}. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

International Nuclear Information System (INIS)

Shah, V. A.; Gammon, P. M.; Rhead, S. D.; Halpin, J. E.; Trushkevych, O.; Wilson, N. R.; Myronov, M.; Edwards, R. S.; Patchett, D. H.; Allred, P. S.; Prest, M. J.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R.; Chávez-Ángel, E.; Shchepetov, A.; Prunnila, M.; Kachkanov, V.; Dolbnya, I. P.; Reparaz, J. S.

2014-01-01

A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm 2 . We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials

Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

Science.gov (United States)

Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

2017-02-01

Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

RFID and Memory Devices Fabricated Integrally on Substrates

Science.gov (United States)

Schramm, Harry F.

2004-01-01

Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for

Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

Science.gov (United States)

Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

2014-07-22

Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

Dual-scale topology optoelectronic processor.

Science.gov (United States)

Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H

1991-12-15

The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.

FABRICATION, MORPHOLOGICAL AND OPTOELECTRONIC ...

African Journals Online (AJOL)

2014-12-31

Dec 31, 2014 ... porous silicon has better optoelectronic properties than bulk .... Measurement: The morphological properties of PS layer such as nanocrystalline size, the .... excess carrier removal by internal recombination and diffusion.

Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

Energy Technology Data Exchange (ETDEWEB)

Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

2010-07-15

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Handbook of compound semiconductors growth, processing, characterization, and devices

CERN Document Server

Holloway, Paul H

1996-01-01

This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

Medical Device Integration Model Based on the Internet of Things

Science.gov (United States)

Hao, Aiyu; Wang, Ling

2015-01-01

At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

Integrated MEMS-based variable optical attenuator and 10Gb/s receiver

Science.gov (United States)

Aberson, James; Cusin, Pierre; Fettig, H.; Hickey, Ryan; Wylde, James

2005-03-01

MEMS devices can be successfully commercialized in favour of competing technologies only if they offer an advantage to the customer in terms of lower cost or increased functionality. There are limited markets where MEMS can be manufactured cheaper than similar technologies due to large volumes: automotive, printing technology, wireless communications, etc. However, success in the marketplace can also be realized by adding significant value to a system at minimal cost or leverging MEMS technology when other solutions simply will not work. This paper describes a thermally actuated, MEMS based, variable optical attenuator that is co-packaged with existing opto-electronic devices to develop an integrated 10Gb/s SONET/SDH receiver. The configuration of the receiver opto-electronics and relatively low voltage availability (12V max) in optical systems bar the use of LCD, EO, and electro-chromic style attenuators. The device was designed and fabricated using a silicon-on-insulator (SOI) starting material. The design and performance of the device (displacement, power consumption, reliability, physical geometry) was defined by the receiver parameters geometry. This paper will describe how these design parameters (hence final device geometry) were determined in light of both the MEMS device fabrication process and the receiver performance. Reference will be made to the design tools used and the design flow which was a joint effort between the MEMS vendor and the end customer. The SOI technology offered a robust, manufacturable solution that gave the required performance in a cost-effective process. However, the singulation of the devices required the development of a new singulation technique that allowed large volumes of silicon to be removed during fabrication yet still offer high singulation yields.

Medical device integration using mobile telecommunications infrastructure.

Science.gov (United States)

Moorman, Bridget A; Cockle, Richard A

2013-01-01

Financial pressures, an aging population, and a rising number of patients with chronic diseases, have encouraged the use of remote monitoring technologies. This usually entails at least one physiological parameter measurement for a clinician. Mobile telecommunication technologies lend themselves to this functionality, and in some cases, avoid some of the issues encountered with device integration. Moreover, the inherent characteristics of the mobile telecommunications infrastructure allow a coupling of business and clinical functions that were not possible before. Table I compares and contrasts some key aspect of device integration in and out of a healthcare facility. An HTM professional may be part of the team that acquires and/or manages a system using a mobile telecommunications technology. It is important for HTM professionals to ensure the data is in a standard format so that the interfaces across this system don't become brittle and break easily if one part changes. Moreover, the security and safety considerations of the system and the data should be a primary consideration in and y purchase, with attention given to the proper environmental and encryption mechanisms. Clinical engineers and other HTM professionals are unique in that they understand the patient/clinician/device interface and the need to ensure its safety and effectiveness regardless of geographical environment.

Integration of semiconductor and ceramic superconductor devices for microwave applications

NARCIS (Netherlands)

Klopman, B.B.G.; Klopman, B.B.G.; Wijers, H.W.; Gao, J.; Gao, J.; Gerritsma, G.J.; Rogalla, Horst

1991-01-01

Due to the very-low-loss properties of ceramic superconductors, high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature facilitates integration with semiconductor devices. Examples are bandpass amplifiers,

Co-deposition methods for the fabrication of organic optoelectronic devices

Science.gov (United States)

Thompson, Mark E.; Liu, Zhiwei; Wu, Chao

2016-09-06

A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

Flexible manufacturing for photonics device assembly

International Nuclear Information System (INIS)

Lu, Shin-yee; Young, K.D.

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and optoelectronics (OE) multi-chip modules usually requires the placement of micron-size devices, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (pigtailing). This is a labor-intensive process. Studies done by the OE industry have shown that 95% of the cost of a pigtailed photonic device is attributed to the current practice of manual alignment and bonding techniques. At Lawrence Livermore National Laboratory, the authors are working to reduce the cost of packaging OE devices, through the use of automation

Optoelectronic lessons as an interdisciplinary lecture

Science.gov (United States)

Wu, Dan; Wu, Maocheng; Gu, Jihua

2017-08-01

It is noticed that more and more students in college are passionately curious about the optoelectronic technology, since optoelectronic technology has advanced extremely quickly during the last five years and its applications could be found in a lot of domains. The students who are interested in this area may have different educational backgrounds and their majors cover science, engineering, literature and social science, etc. Our course "History of the Optoelectronic Technology" is set up as an interdisciplinary lecture of the "liberal education" at our university, and is available for all students with different academic backgrounds from any departments of our university. The main purpose of the course is to show the interesting and colorful historical aspects of the development of this technology, so that the students from different departments could absorb the academic nourishment they wanted. There are little complex derivations of physical formulas through the whole lecture, but there are still some difficulties about the lecture which is discussed in this paper.

Investigating Mobile Devices Integration in Higher Education in Cyprus: Faculty Perspectives

Directory of Open Access Journals (Sweden)

Nikleia Eteokleous

2009-01-01

Full Text Available Mobile devices are everywhere and mobile learning has emerged as a potential educational environment; however it is relatively new to Cyprus educational system. The purpose of this research work is to assess and determine the readiness; and evaluate the viability of integrating mobile technology in Cyprus higher education level. To address the above, a mixed method approach is employed making use of quantitative and qualitative data from faculty members working in three private universities in Cyprus. Faculty reactions were mixed with some of them seeing the benefits for mobile learning while others have doubts. The results summarize the technological and pedagogical aspects to be considered prior integrating mobile devices. Additionally, the study supports that one of the major barriers to educators is the lack of understanding regarding mobile devices integration in the teaching and learning process. Finally, there is a need to develop well-defined and well-structured requirements for mobile integration in the classroom.

Tailoring uniform gold nanoparticle arrays and nanoporous films for next-generation optoelectronic devices

Science.gov (United States)

Farid, Sidra; Kuljic, Rade; Poduri, Shripriya; Dutta, Mitra; Darling, Seth B.

2018-06-01

High-density arrays of gold nanodots and nanoholes on indium tin oxide (ITO)-coated glass surfaces are fabricated using a nanoporous template fabricated by the self-assembly of diblock copolymers of poly (styrene-block-methyl methacrylate) (PS-b-PMMA) structures. By balancing the interfacial interactions between the polymer blocks and the substrate using random copolymer, cylindrical block copolymer microdomains oriented perpendicular to the plane of the substrate have been obtained. Nanoporous PS films are created by selectively etching PMMA cylinders, a straightforward route to form highly ordered nanoscale porous films. Deposition of gold on the template followed by lift off and sonication leaves a highly dense array of gold nanodots. These materials can serve as templates for the vapor-liquid-solid (VLS) growth of semiconductor nanorod arrays for next generation hybrid optoelectronic applications.

Medicine Delivery Device with Integrated Sterilization and Detection

Science.gov (United States)

Shearn, Michael J.; Greer, Harold F.; Manohara, Harish

2013-01-01

Sterile delivery devices can be created by integrating a medicine delivery instrument with surfaces that are coated with germicidal and anti-fouling material. This requires that a large-surface-area template be developed within a constrained volume to ensure good contact between the delivered medicine and the germicidal material. Both of these can be integrated using JPL-developed silicon nanotip or cryo-etch black silicon technologies with atomic layer deposition (ALD) coating of specific germicidal layers. The application of semiconductor processing techniques and technologies to the problems of fluid manipulation and delivery has enabled the integration of chemical, electrical, and mechanical manipulation of samples all within a single microfluidic device. This approach has been successfully applied at JPL to the automated processing, detection, and analysis of minute quantities (parts per trillion level) of biomaterials to develop instruments for in situ exploration or extraterrestrial bodies. The same nanofabrication techniques that are used to produce a microfluidics device are also capable of synthesizing extremely high-surface-area templates in precise locations, and coating those surfaces with conformal films to manipulate their surface properties. This methodology has been successfully applied at JPL to produce patterned and coated silicon nanotips (also known as black silicon) to manipulate the hydrophilicity of surfaces to direct the spreading of fluids in microdevices. JPL's ALD technique is an ideal method to produce the highly conformal coatings required for this type of application. Certain materials, such as TiO2, have germicidal and anti-fouling properties when they are illuminated with UV light. The proposed delivery device contacts medicine with this high-surface-area black silicon surface coated with a thin-film germicidal deposited conformally with ALD. The coating can also be illuminated with ultraviolet light for the purpose of sterilization

77 FR 35426 - Certain Radio Frequency Integrated Circuits and Devices Containing Same; Institution of...

Science.gov (United States)

2012-06-13

... of certain radio frequency integrated circuits and devices containing same by reason of infringement... importation of certain radio frequency integrated circuits and devices containing same that infringe one or... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-848] Certain Radio Frequency Integrated...

A manufacturable process integration approach for graphene devices

Science.gov (United States)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

Stereoscopic construction and practice of optoelectronic technology textbook

Science.gov (United States)

Zhou, Zigang; Zhang, Jinlong; Wang, Huili; Yang, Yongjia; Han, Yanling

2017-08-01

It is a professional degree course textbook for the Nation-class Specialty—Optoelectronic Information Science and Engineering, and it is also an engineering practice textbook for the cultivation of photoelectric excellent engineers. The book seeks to comprehensively introduce the theoretical and applied basis of optoelectronic technology, and it's closely linked to the current development of optoelectronic industry frontier and made up of following core contents, including the laser source, the light's transmission, modulation, detection, imaging and display. At the same time, it also embodies the features of the source of laser, the transmission of the waveguide, the electronic means and the optical processing methods.

Evaluation of polymer based third order nonlinear integrated optics devices

NARCIS (Netherlands)

Driessen, A.; Hoekstra, Hugo; Blom, F.C.; Horst, F.; Horst, F.; Krijnen, Gijsbertus J.M.; van Schoot, J.B.P.; van Schoot, J.B.P.; Lambeck, Paul; Popma, T.J.A.; Diemeer, Mart

Nonlinear polymers are promising materials for high speed active integrated optics devices. In this paper we evaluate the perspectives polymer based nonlinear optical devices can offer. Special attention is directed to the materials aspects. In our experimental work we applied mainly Akzo Nobel DANS

Molecular Orientation of Conjugated Polymer Chains in Nanostructures and Thin Films: Review of Processes and Application to Optoelectronics

Directory of Open Access Journals (Sweden)

Varun Vohra

2017-01-01

Full Text Available Semiconducting polymers are composed of elongated conjugated polymer backbones and side chains with high solubility and mechanical properties. The combination of these two features results in a high processability and a potential to orient the conjugated backbones in thin films and nanofibers. The thin films and nanofibers are usually composed of highly crystalline (high charge transport and amorphous parts. Orientation of conjugated polymer can result in enhanced charge transport or optical properties as it induces increased crystallinity or preferential orientation of the crystallites. After summarizing the potential strategies to exploit molecular order in conjugated polymer based optoelectronic devices, we will review some of the fabrication processes to induce molecular orientation. In particular, we will review the cases involving molecular and interfacial interactions, unidirectional deposition processes, electrospinning, and postdeposition mechanical treatments. The studies presented here clearly demonstrate that process-controlled molecular orientation of the conjugated polymer chains can result in high device performances (mobilities over 40 cm2·V−1·s−1 and solar cells with efficiencies over 10%. Furthermore, the peculiar interactions between molecularly oriented polymers and polarized light have the potential not only to generate low-cost and low energy consumption polarized light sources but also to fabricate innovative devices such as solar cell integrated LCDs or bipolarized LEDs.

Perspectives in optoelectronics

National Research Council Canada - National Science Library

Jha, Sudhanshu S

1995-01-01

..., optoelectronics is playing a major role in both applied as well as basic sciences. In years to come, i t is destined to change the face of information technology and robotics, involving optical sensing and control, information storage, signal and image processing, communications, and computing. Because of the possibility of using large bandwidths availa...

Insulating materials for optoelectronics

International Nuclear Information System (INIS)

Agullo-Lopez, F.

1990-01-01

Optoelectronics is an interdisciplinary field. Basic functions of an optoelectronic system include the generator of the optical signal, its transmission and handling and, finally, its detection, storage and display. A large variety of semiconductor and insulating materials are used or are being considered to perform those functions. The authors focus on insulating materials, mostly oxides. For signal generation, tunable solid state lasers, either vibronic or those based oon colour centres are briefly described, and their main operating parameters summarized. Reference is made to some developments on fiber and waveguide lasers. Relevant physical features of the silica fibres used for low-loss, long-band, optical transmission are reviewed, as well as present efforts to further reduce attenuation in the mid-infrared range. Particular attention is paid to photorefractive materials (LiNbO 3 , BGO, BSO, etc.), which are being investigated

Clean graphene electrodes on organic thin-film devices via orthogonal fluorinated chemistry.

Science.gov (United States)

Beck, Jonathan H; Barton, Robert A; Cox, Marshall P; Alexandrou, Konstantinos; Petrone, Nicholas; Olivieri, Giorgia; Yang, Shyuan; Hone, James; Kymissis, Ioannis

2015-04-08

Graphene is a promising flexible, highly transparent, and elementally abundant electrode for organic electronics. Typical methods utilized to transfer large-area films of graphene synthesized by chemical vapor deposition on metal catalysts are not compatible with organic thin-films, limiting the integration of graphene into organic optoelectronic devices. This article describes a graphene transfer process onto chemically sensitive organic semiconductor thin-films. The process incorporates an elastomeric stamp with a fluorinated polymer release layer that can be removed, post-transfer, via a fluorinated solvent; neither fluorinated material adversely affects the organic semiconductor materials. We used Raman spectroscopy, atomic force microscopy, and scanning electron microscopy to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film. To demonstrate our transfer method's compatibility with organic semiconductors, we fabricate three classes of organic thin-film devices: graphene field effect transistors without additional cleaning processes, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices. These experiments demonstrate the potential of hybrid graphene/organic devices in which graphene is deposited directly onto underlying organic thin-film structures.

Tutorial: Integrated-photonic switching structures

Science.gov (United States)

Soref, Richard

2018-02-01

Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

Device- and service profiles for integrated or systems based on open standards

Directory of Open Access Journals (Sweden)

Mildner Alexander

2015-09-01

Full Text Available Integrated OR systems nowadays are closed and proprietary, so that the interconnection of components from third-party vendors is only possible with high time and cost effort. An integrated operating theatre with open interfaces, giving clinical operators the opportunity to choose individual medical devices from different manufacturers, is currently being developed in the framework of the BMBF (Federal Ministry of Education and Research funded project OR.NET [1]. Actual standards and concepts regarding technical feasibility and accreditation process do not cope with the requirements for modular integration based on an open standard. Therefore, strategies as well as service and device profiles to enable a procedure for risk management and certifiability are in the focus of the project work. Amongst others, a concept for User Interface Profiles (UI-Profiles has been conceived in order to describe medical device functions and the entire user interface regarding Human-Machine-Interaction (HMI characteristics with the aim to identify human-induced risks of central user interfaces. The use of standardized device and service profiles shall allow the manufacturers to integrate their medical devices in the OR.NET network, without disclosing the medical devices’ risk analysis and related confidential knowledge or proprietary information.

Transmission electron microscopy of InP-based compound semiconductor materials and devices

International Nuclear Information System (INIS)

Chu, S.N.G.

1990-01-01

InP/InGaAsP-based heteroepitaxial structures constitute the major optoelectronic devices for state-of-the-art long wavelength optical fiber communication system.s Future advanced device structures will require thin heteroepitaxial quantum wells and superlattices a few tens of angstrom or less in thickness, and lateral dimensions ranging from a few tens angstrom for quantum dots and wires to a few μm in width for buried heterostructure lasers. Due to the increasing complexity of the device structure required by band-gap engineering, the performance of these devices becomes susceptible to any lattice imperfections present in the structure. Transmission electron microscopy (TEM), therefore, becomes the most important technique in characterizing the structural integrity of these materials. Cross-section transmission electron microscopy (XTEM) not only provides the necessary geometric information on the device structure; a careful study of the materials science behind the observed lattice imperfections provides directions for optimization of both the epitaxial growth parameters and device processing conditions. Furthermore, for device reliability studies, TEM is the only technique that unambiguously identifies the cause of device degradation. In this paper, the authors discuss areas of application of various TEM techniques, describe the TEM sample preparation technique, and review case studies to demonstrate the power of the TEM technique

Wide gap semiconductor microwave devices

International Nuclear Information System (INIS)

Buniatyan, V V; Aroutiounian, V M

2007-01-01

A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

Comparison of costs of integrating working level devices

International Nuclear Information System (INIS)

Langner, G.H. Jr.

1977-01-01

For the purpose of deciding upon the method for making routine field measurements of radon and radon daughter products there are primarily two factors to be taken into consideration: how well the various methods measure the parameter of interest and how much they cost. For the purpose of measuring the annual average working level within a structure there are available basically two devices: the integrating air sampler and track etch film. The cost and manpower requirements for each of these two devices are discussed

Towards Integrating Distributed Energy Resources and Storage Devices in Smart Grid.

Science.gov (United States)

Xu, Guobin; Yu, Wei; Griffith, David; Golmie, Nada; Moulema, Paul

2017-02-01

Internet of Things (IoT) provides a generic infrastructure for different applications to integrate information communication techniques with physical components to achieve automatic data collection, transmission, exchange, and computation. The smart grid, as one of typical applications supported by IoT, denoted as a re-engineering and a modernization of the traditional power grid, aims to provide reliable, secure, and efficient energy transmission and distribution to consumers. How to effectively integrate distributed (renewable) energy resources and storage devices to satisfy the energy service requirements of users, while minimizing the power generation and transmission cost, remains a highly pressing challenge in the smart grid. To address this challenge and assess the effectiveness of integrating distributed energy resources and storage devices, in this paper we develop a theoretical framework to model and analyze three types of power grid systems: the power grid with only bulk energy generators, the power grid with distributed energy resources, and the power grid with both distributed energy resources and storage devices. Based on the metrics of the power cumulative cost and the service reliability to users, we formally model and analyze the impact of integrating distributed energy resources and storage devices in the power grid. We also use the concept of network calculus, which has been traditionally used for carrying out traffic engineering in computer networks, to derive the bounds of both power supply and user demand to achieve a high service reliability to users. Through an extensive performance evaluation, our data shows that integrating distributed energy resources conjointly with energy storage devices can reduce generation costs, smooth the curve of bulk power generation over time, reduce bulk power generation and power distribution losses, and provide a sustainable service reliability to users in the power grid.

A graphene integrated highly transparent resistive switching memory device

Science.gov (United States)

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

2018-05-01

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

Carbon dots—Emerging light emitters for bioimaging, cancer therapy and optoelectronics

KAUST Repository

Hola, Katerina; Zhang, Yu; Wang, Yu; Giannelis, Emmanuel P.; Zboril, Radek; Rogach, Andrey L.

2014-01-01

© 2014 Elsevier Ltd. All rights reserved. Carbon dots represent an emerging class of fluorescent materials and provide a broad application potential in various fields of biomedicine and optoelectronics. In this review, we introduce various synthetic strategies and basic photoluminescence properties of carbon dots, and then address their advanced in vitro and in vivo bioapplications including cell imaging, photoacoustic imaging, photodynamic therapy and targeted drug delivery. We further consider the applicability of carbon dots as components of light emitting diodes, which include carbon dot based electroluminescence, optical down-conversion, and hybrid plasmonic devices. The review concludes with an outlook towards future developments of these emerging light-emitting materials.

Carbon dots—Emerging light emitters for bioimaging, cancer therapy and optoelectronics

KAUST Repository

Hola, Katerina

2014-10-01

© 2014 Elsevier Ltd. All rights reserved. Carbon dots represent an emerging class of fluorescent materials and provide a broad application potential in various fields of biomedicine and optoelectronics. In this review, we introduce various synthetic strategies and basic photoluminescence properties of carbon dots, and then address their advanced in vitro and in vivo bioapplications including cell imaging, photoacoustic imaging, photodynamic therapy and targeted drug delivery. We further consider the applicability of carbon dots as components of light emitting diodes, which include carbon dot based electroluminescence, optical down-conversion, and hybrid plasmonic devices. The review concludes with an outlook towards future developments of these emerging light-emitting materials.

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

International Nuclear Information System (INIS)

Jiang Wei; Gao Hong; Xu Ling-Ling; Ma Jia-Ning; Zhang E; Wei Ping; Lin Jia-Qi

2011-01-01

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ = 505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

CMOS Optoelectronic Lock-In Amplifier With Integrated Phototransistor Array.

Science.gov (United States)

An Hu; Chodavarapu, Vamsy P

2010-10-01

We describe the design and development of an optoelectronic lock-in amplifier (LIA) for optical sensing and spectroscopy applications. The prototype amplifier is fabricated using Taiwan Semiconductor Manufacturing Co. complementary metal-oxide semiconductor 0.35-μm technology and uses a phototransistor array (total active area is 400 μm × 640μm) to convert the incident optical signals into electrical currents. The photocurrents are then converted into voltage signals using a transimpedance amplifier for subsequent convenient signal processing by the LIA circuitry. The LIA is optimized to be operational at 20-kHz modulation frequency but is operational in the frequency range from 13 kHz to 25 kHz. The system is tested with a light-emitting diode (LED) as the light source. The noise and signal distortions are suppressed with filters and a phase-locked loop (PLL) implemented in the LIA. The output dc voltage of the LIA is proportional to the incident optical power. The minimum measured dynamic reserve and sensitivity are 1.31 dB and 34 mV/μW, respectively. The output versus input relationship has shown good linearity. The LIA consumes an average power of 12.79 mW with a 3.3-V dc power supply.

Integrated-optic current sensors with a multimode interference waveguide device.

Science.gov (United States)

Kim, Sung-Moon; Chu, Woo-Sung; Kim, Sang-Guk; Oh, Min-Cheol

2016-04-04

Optical current sensors based on polarization-rotated reflection interferometry are demonstrated using polymeric integrated optics and various functional optical waveguide devices. Interferometric sensors normally require bias feedback control for maintaining the operating point, which increases the cost. In order to resolve this constraint of feedback control, a multimode interference (MMI) waveguide device is integrated onto the current-sensor optical chip in this work. From the multiple outputs of the MMI, a 90° phase-shifted transfer function is obtained. Using passive quadrature demodulation, we demonstrate that the sensor could maintain the output signal regardless of the drift in the operating bias-point.

In situ–Directed Growth of Organic Nanofibers and Nanoflakes: Electrical and Morphological Properties

DEFF Research Database (Denmark)

Oliveira Hansen, Roana Melina de; Madsen, Morten; Kjelstrup-Hansen, Jakob

2010-01-01

Organic nanostructures made from organic molecules such as para-hexaphenylene (p-6P) could form nanoscale components in future electronic and optoelectronic devices. However, the integration of such fragile nanostructures with the necessary interface circuitry such as metal electrodes for electri......Organic nanostructures made from organic molecules such as para-hexaphenylene (p-6P) could form nanoscale components in future electronic and optoelectronic devices. However, the integration of such fragile nanostructures with the necessary interface circuitry such as metal electrodes...... patterned by a combination of optical lithography and electron beam lithography. The dimensions of the gold electrodes strongly influence the morphology of the resulting structures leading to notably different electrical properties. The ability to control such nanofiber or nanoflake growth opens...... the possibility for large-scale optoelectronic device fabrication....

Advanced educational program in optoelectronics for undergraduates and graduates in electronics

Science.gov (United States)

Vladescu, Marian; Schiopu, Paul

2015-02-01

The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

The optoelectronic chameleon - GaN-based light emitters from the UV to green

Energy Technology Data Exchange (ETDEWEB)

Kneissl, Michael [Institut fuer Festkoerperphysik, Technische Universitaet Berlin (Germany)

2008-07-01

Group III-nitrides have evolved into one of the most versatile and important semiconductor materials for optoelectronic devices. GaN-based blue, green and white light emitting diodes have already entered many parts of everyday life and violet lasers are expected to be following soon. However, considering the extraordinary electronic properties and the wide spectral range that is accessible through nitride materials, it appears that it we have just touched the tip of the iceberg. We discuss some of the new fields of research for InAlGaN materials and devices and review progress in the development of near and deep ultraviolet light emitting diodes, as well as growth and optical properties of InN and indium rich InGaN alloys for emitter in the blue-green spectral range and beyond.

Integrated Photoelectrochemical Solar Energy Conversion and Organic Redox Flow Battery Devices

KAUST Repository

Li, Wenjie; Fu, Hui-chun; Li, Linsen; Cabá n-Acevedo, Miguel; He, Jr-Hau; Jin, Song

2016-01-01

photoelectrochemical solar energy conversion and electrochemical storage device is developed by integrating regenerative silicon solar cells and 9,10-anthraquinone-2,7-disulfonic acid (AQDS)/1,2-benzoquinone-3,5-disulfonic acid (BQDS) RFBs. The device can be directly

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

Science.gov (United States)

Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

2018-01-01

2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

Templates for integrated nanofiber growth

DEFF Research Database (Denmark)

Oliveira Hansen, Roana Melina de

the growth direction and the nanofiber length and position can be controlled by placement of nano-structured lines on the substrate. These lines can be used to guide the surface diffusion and thereby steer the self-assembly process of the organic molecules leading to morphologically well-defined molecular...... the morphology of the resulting structures leading to notably different electrical properties. The transistor design influences its electrical characteristics, and the top-gate configuration shows to have the stronger gate effect. In addition, platforms for light-emitting devices were fabricated......Para-hexaphenylene (p6P) molecules have the ability to self-assemble into organic nanofibers. These nanofibers hold unique optoelectronic properties, which make them interesting candidates as elements in electronic and optoelectronic devices. Typically these nanofibers are grown on specific single...

Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

KAUST Repository

Viržonis, Darius; Kodzius, Rimantas; Vanagas, Galius

2013-01-01

The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here

A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices

Science.gov (United States)

AlQurashi, Ahmed; Selvakumar, C. R.

2018-06-01

There had been tremendous growth in the field of Integrated circuits (ICs) in the past fifty years. Scaling laws mandated both lateral and vertical dimensions to be reduced and a steady increase in doping densities. Most of the modern semiconductor devices have invariably heavily doped regions where Fermi-Dirac Integrals are required. Several attempts have been devoted to developing analytical approximations for Fermi-Dirac Integrals since numerical computations of Fermi-Dirac Integrals are difficult to use in semiconductor devices, although there are several highly accurate tabulated functions available. Most of these analytical expressions are not sufficiently suitable to be employed in semiconductor device applications due to their poor accuracy, the requirement of complicated calculations, and difficulties in differentiating and integrating. A new approximation has been developed for the Fermi-Dirac integrals of the order 1/2 by using Prony's method and discussed in this paper. The approximation is accurate enough (Mean Absolute Error (MAE) = 0.38%) and easy enough to be used in semiconductor device equations. The new approximation of Fermi-Dirac Integrals is applied to a more generalized Einstein Relation which is an important relation in semiconductor devices.

Experimental Device for Learning of Logical Circuit Design using Integrated Circuits

OpenAIRE

石橋, 孝昭

2012-01-01

This paper presents an experimental device for learning of logical circuit design using integrated circuits and breadboards. The experimental device can be made at a low cost and can be used for many subjects such as logical circuits, computer engineering, basic electricity, electrical circuits and electronic circuits. The proposed device is effective to learn the logical circuits than the usual lecture.

a Brief Survey on Basic Properties of Thin Films for Device Application

Science.gov (United States)

Rao, M. C.; Shekhawat, M. S.

Thin film materials are the key elements of continued technological advances made in the fields of optoelectronic, photonic and magnetic devices. Thin film studies have directly or indirectly advanced many new areas of research in solid state physics and chemistry which are based on phenomena uniquely characteristic of the thickness, geometry and structure of the film. The processing of materials into thin films allows easy integration into various types of devices. Thin films are extremely thermally stable and reasonably hard, but they are fragile. On the other hand organic materials have reasonable thermal stability and are tough, but are soft. Thin film mechanical properties can be measured by tensile testing of freestanding films and by the micro beam cantilever deflection technique, but the easiest way is by means of nanoindentation. Optical experiments provide a good way of examining the properties of semiconductors. Particularly measuring the absorption coefficient for various energies gives information about the band gaps of the material. Thin film materials have been used in semiconductor devices, wireless communications, telecommunications, integrated circuits, rectifiers, transistors, solar cells, light-emitting diodes, photoconductors and light crystal displays, lithography, micro- electromechanical systems (MEMS) and multifunctional emerging coatings, as well as other emerging cutting technologies.

Wearable Fall Detector using Integrated Sensors and Energy Devices

Science.gov (United States)

Jung, Sungmook; Hong, Seungki; Kim, Jaemin; Lee, Sangkyu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

2015-11-01

Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction with integrated sensors, controllers, and wireless units. A stretchable conductive nylon is used as electrodes of the triboelectric generator and the interconnection between battery cells. Ethoxylated polyethylenimine, coated on the surface of the conductive nylon electrode, tunes the work function of a triboelectric generator and maximizes its performance. The electrical energy harvested from the triboelectric generator through human body motions continuously recharges the stretchable battery and prolongs hours of its use. The integrated energy supply system runs the 3-axis accelerometer and related electronics that record human body motions and send the data wirelessly. Upon the unexpected fall occurring, a custom-made software discriminates the fall signal and an emergency alert is immediately sent to an external mobile device. This wearable fall detection system would provide new opportunities in the mobile electronics and wearable healthcare.

Sol-gel synthesized ZnO for optoelectronics applications: a characterization review

Science.gov (United States)

Harun, Kausar; Hussain, Fayaz; Purwanto, Agus; Sahraoui, Bouchta; Zawadzka, Anna; Azmin Mohamad, Ahmad

2017-12-01

The rapid growth in green technology has resulted in a marked increase in the incorporation of ZnO in energy and optoelectronic devices. Research involving ZnO is being given renewed attention in the quest to fully exploit its promising properties. The purity and state of defects in the ZnO system are optimized through several modifications to the synthesis conditions and the starting materials. These works have been verified through a series of characterizations. This review covers the essential characterization outcomes of pure ZnO nanoparticles. Emphasis is placed on recent techniques, examples and some issues concerning sol-gel synthesized ZnO nanoparticles. Thermal, phase, structural and morphological observations are combined to ascertain the level of purity of ZnO. The subsequent elemental and optical characterizations are also discussed. This review would be the collective information and suggestions at one place for investigators to focus on the best development of ZnO-based optical and energy devices.

Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

Directory of Open Access Journals (Sweden)

Bing Huang

2014-05-01

Full Text Available Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double-sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

International Nuclear Information System (INIS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-01-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO 3 ) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000 deg. C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO 3 , producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN/GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO 3 modulators on compact optoelectronic/electronic chips

Analysis of optoelectronic strategic planning in Taiwan by artificial intelligence portfolio tool

Science.gov (United States)

Chang, Rang-Seng

1992-05-01

Taiwan ROC has achieved significant advances in the optoelectronic industry with some Taiwan products ranked high in the world market and technology. Six segmentations of optoelectronic were planned. Each one was divided into several strategic items, design artificial intelligent portfolio tool (AIPT) to analyze the optoelectronic strategic planning in Taiwan. The portfolio is designed to provoke strategic thinking intelligently. This computer- generated strategy should be selected and modified by the individual. Some strategies for the development of the Taiwan optoelectronic industry also are discussed in this paper.

Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

KAUST Repository

Viržonis, Darius

2013-10-22

The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here by presentin

3D integration of planar crossbar memristive devices with CMOS substrate

International Nuclear Information System (INIS)

Lin, Peng; Pi, Shuang; Xia, Qiangfei

2014-01-01

Planar memristive devices with bottom electrodes embedded into the substrates were integrated on top of CMOS substrates using nanoimprint lithography to implement hybrid circuits with a CMOL-like architecture. The planar geometry eliminated the mechanically and electrically weak parts, such as kinks in the top electrodes in a traditional crossbar structure, and allowed the use of thicker and thus less resistive metal wires as the bottom electrodes. Planar memristive devices integrated with CMOS have demonstrated much lower programing voltages and excellent switching uniformity. With the inclusion of the Moiré pattern, the integration process has sub-20 nm alignment accuracy, opening opportunities for 3D hybrid circuits in applications in the next generation of memory and unconventional computing. (paper)

Integration Head Mounted Display Device and Hand Motion Gesture Device for Virtual Reality Laboratory

Science.gov (United States)

Rengganis, Y. A.; Safrodin, M.; Sukaridhoto, S.

2018-01-01

Virtual Reality Laboratory (VR Lab) is an innovation for conventional learning media which show us whole learning process in laboratory. There are many tools and materials are needed by user for doing practical in it, so user could feel new learning atmosphere by using this innovation. Nowadays, technologies more sophisticated than before. So it would carry in education and it will be more effective, efficient. The Supported technologies are needed us for making VR Lab such as head mounted display device and hand motion gesture device. The integration among them will be used us for making this research. Head mounted display device for viewing 3D environment of virtual reality laboratory. Hand motion gesture device for catching user real hand and it will be visualized in virtual reality laboratory. Virtual Reality will show us, if using the newest technologies in learning process it could make more interesting and easy to understand.

Correlation of surface contour, optoelectronic and spectroscopic properties of Cu(In,Ga)Se{sub 2} by SNOM and AFM

Energy Technology Data Exchange (ETDEWEB)

Neumann, Oliver; Heise, Stephan J.; Brueggemann, Rudolf; Meessen, Max; Bauer, Gottfried H. [Institute of Physics, Carl von Ossietzky University Oldenburg (Germany); Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

2012-07-01

Chalcopyrite absorbers exhibit local fluctuations of structural, optical and optoelectronic properties. We study the correlation of the surface contour and the local properties such as the integrated photoluminescence (PL) yield and the splitting of the quasi-Fermi levels in a Cu(In,Ga)Se{sub 2}-based thin-film system at room temperature by AFM and spatially resolved PL measurements at the identical position with a scanning near-field optical microscope (SNOM). The Cu(In,Ga)Se{sub 2} layer is deposited on glass, etched with bromine-methanol to smooth the surface for a more homogeneous incoupling of laser light, and passivated with cadmium sulfide. Our measurements reveal a high structural correlation between surface contour, integrated PL yield and quasi-Fermi level splitting. Additionally, we observe trenches in the surface contour which correspond to a dip or to a peak in the splitting of the quasi-Fermi levels and integrated PL yield. Furthermore some trenches show spectral variation of the PL compared to their direct environment. We discuss these observations with respect to the optoelectronic property and the composition of the absorber.

Battery‐Supercapacitor Hybrid Devices: Recent Progress and Future Prospects

Science.gov (United States)

Zuo, Wenhua; Li, Ruizhi; Zhou, Cheng; Xia, Jianlong

2017-01-01

Design and fabrication of electrochemical energy storage systems with both high energy and power densities as well as long cycling life is of great importance. As one of these systems, Battery‐supercapacitor hybrid device (BSH) is typically constructed with a high‐capacity battery‐type electrode and a high‐rate capacitive electrode, which has attracted enormous attention due to its potential applications in future electric vehicles, smart electric grids, and even miniaturized electronic/optoelectronic devices, etc. With proper design, BSH will provide unique advantages such as high performance, cheapness, safety, and environmental friendliness. This review first addresses the fundamental scientific principle, structure, and possible classification of BSHs, and then reviews the recent advances on various existing and emerging BSHs such as Li‐/Na‐ion BSHs, acidic/alkaline BSHs, BSH with redox electrolytes, and BSH with pseudocapacitive electrode, with the focus on materials and electrochemical performances. Furthermore, recent progresses in BSH devices with specific functionalities of flexibility and transparency, etc. will be highlighted. Finally, the future developing trends and directions as well as the challenges will also be discussed; especially, two conceptual BSHs with aqueous high voltage window and integrated 3D electrode/electrolyte architecture will be proposed. PMID:28725528

Optical modeling and simulation of thin-film photovoltaic devices

CERN Document Server

Krc, Janez

2013-01-01

In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

Advanced light emitting device structures for optoelectronic applications

International Nuclear Information System (INIS)

Kovac, J.

2002-01-01

Several factors are driving the recent development of light emitting devices (LED,s). The most important ones are brightness, available efficiency, architecture form flexibility, rugged construction and low applied voltages. These are contributing to growth in markets such as traffic lights, automotive brake signals and instrument displays, video displays, traffic signals, decorative signs and the many uses of the new white LED-based products. A new developments are directed to various materials used for high brightness HB-LED,s based on AlGaAs (red), AlInGaP (yellow-green to red) and InGaN (blue, green and white) devices. The development of LED,s depends on epitaxial growth advances, mainly molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). As a technology improved, the performace of visible LED,s increased at the rate 10x per decade from less than 0.1 lm/W to the best red and orange LED,s now providing about 100 lm/W. The main engineering challenge is now the extraction or the ability to get all the light out of the chip to where it is needed. This has led to novel changes in the shape of the LED chip and to the replacement of GaAs with transparent GaP substrate throught wafer bonding after the LED has been produced. Most of the focus for nitride devices (InGaN) is to develop improved or new substrate materials to replace sapphire and enable the growth of lower defect density materials. Organic LED,s (OLED,s) have been undergone dramatic improvements in performace in the last five years. Two main technologies for OLED,s have emerged in the last decade, either based on conjaguated polymers, or sublimed films of small molecules. Recent improvements have taken OLED,s to luminous efficiency greater than 20 lm/W. However, in contrast to conventional LED,s, OLED,s share many of the properties associated with other organic substances and polymers. They allow more design flexibility than inorganic LED,s and thus lead to the high

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Science.gov (United States)

Zúñiga-Pérez, Jesús; Consonni, Vincent; Lymperakis, Liverios; Kong, Xiang; Trampert, Achim; Fernández-Garrido, Sergio; Brandt, Oliver; Renevier, Hubert; Keller, Stacia; Hestroffer, Karine; Wagner, Markus R.; Reparaz, Juan Sebastián; Akyol, Fatih; Rajan, Siddharth; Rennesson, Stéphanie; Palacios, Tomás; Feuillet, Guy

2016-12-01

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

Integrated devices for quantum information and quantum simulation with polarization encoded qubits

Science.gov (United States)

Sansoni, Linda; Sciarrino, Fabio; Mataloni, Paolo; Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto

2012-06-01

The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. The technology for handling polarization-encoded qubits, the most commonly adopted approach, was still missing in quantum optical circuits until the ultrafast laser writing (ULW) technique was adopted for the first time to realize integrated devices able to support and manipulate polarization encoded qubits.1 Thanks to this method, polarization dependent and independent devices can be realized. In particular the maintenance of polarization entanglement was demonstrated in a balanced polarization independent integrated beam splitter1 and an integrated CNOT gate for polarization qubits was realized and carachterized.2 We also exploited integrated optics for quantum simulation tasks: by adopting the ULW technique an integrated quantum walk circuit was realized3 and, for the first time, we investigate how the particle statistics, either bosonic or fermionic, influences a two-particle discrete quantum walk. Such experiment has been realized by adopting two-photon entangled states and an array of integrated symmetric directional couplers. The polarization entanglement was exploited to simulate the bunching-antibunching feature of non interacting bosons and fermions. To this scope a novel three-dimensional geometry for the waveguide circuit is introduced, which allows accurate polarization independent behaviour, maintaining a remarkable control on both phase and balancement of the directional couplers.

Integrating nanosphere lithography in device fabrication

Science.gov (United States)

Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

2016-03-01

This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

Electrochemistry, polymers and opto-electronic devices: a combination with a future

Directory of Open Access Journals (Sweden)

De Paoli Marco-A.

2002-01-01

Full Text Available Electrochemistry came into life with the invention of the pile, by Volta in 1800. He combined different metal discs with a piece of tissue, swollen with an aqueous salt solution. The so-called Pila di Volta used a polymer for the first time in an electrochemical device and can be seen as a powerful idea to create new devices. Recently, polymers became an alternative to make thin and flexible devices. Thus, we find transparent plastic electrodes based on poly(ethylene terephtalate coated with a transition metal oxide. There are also polymer electrolytes based on complexes of inorganic salts and poly(ethylene oxide derivatives, with reasonable ionic conductivity in the absence of solvents. Finally, the electroactive polymers are efficient substitutes for the inorganic semiconductors because they can be synthetically tailored to produce the desired electronic answer. Combining these materials it is possible to assemble different types of electro-optical devices, like electrochromic, photoelectrochemical and light-emitting electrochemical cells.

Development and Testing of an Integrated Sandia Cooler Thermoelectric Device (SCTD).

Energy Technology Data Exchange (ETDEWEB)

Johnson, Terry A.; Staats, Wayne Lawrence,; Leick, Michael Thomas; Zimmerman, Mark D.; Radermacher, Reinhard; Martin, Cara; Nasuta, Dennis; Kalinowski, Paul; Hoffman, William

2014-12-01

This report describes a FY14 effort to develop an integrated Sandia Cooler T hermoelectric D evice (SCTD) . The project included a review of feasible thermoelectric (TE) cooling applications, baseline performance testing of an existing TE device, analysis and design development of an integrated SCTD assembly, and performance measurement and validation of the integrated SCTD prototype.

An architecture for integrating planar and 3D cQED devices

Energy Technology Data Exchange (ETDEWEB)

Axline, C.; Reagor, M.; Heeres, R.; Reinhold, P.; Wang, C.; Shain, K.; Pfaff, W.; Chu, Y.; Frunzio, L.; Schoelkopf, R. J. [Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States)

2016-07-25

Numerous loss mechanisms can limit coherence and scalability of planar and 3D-based circuit quantum electrodynamics (cQED) devices, particularly due to their packaging. The low loss and natural isolation of 3D enclosures make them good candidates for coherent scaling. We introduce a coaxial transmission line device architecture with coherence similar to traditional 3D cQED systems. Measurements demonstrate well-controlled external and on-chip couplings, a spectrum absent of cross-talk or spurious modes, and excellent resonator and qubit lifetimes. We integrate a resonator-qubit system in this architecture with a seamless 3D cavity, and separately pattern a qubit, readout resonator, Purcell filter, and high-Q stripline resonator on a single chip. Device coherence and its ease of integration make this a promising tool for complex experiments.

A Sensor Middleware for integration of heterogeneous medical devices.

Science.gov (United States)

Brito, M; Vale, L; Carvalho, P; Henriques, J

2010-01-01

In this paper, the architecture of a modular, service-oriented, Sensor Middleware for data acquisition and processing is presented. The described solution was developed with the purpose of solving two increasingly relevant problems in the context of modern pHealth systems: i) to aggregate a number of heterogeneous, off-the-shelf, devices from which clinical measurements can be acquired and ii) to provide access and integration with an 802.15.4 network of wearable sensors. The modular nature of the Middleware provides the means to easily integrate pre-processing algorithms into processing pipelines, as well as new drivers for adding support for new sensor devices or communication technologies. Tests performed with both real and artificially generated data streams show that the presented solution is suitable for use both in a Windows PC or a Windows Mobile PDA with minimal overhead.

Parallel optoelectronic trinary signed-digit division

Science.gov (United States)

Alam, Mohammad S.

1999-03-01

The trinary signed-digit (TSD) number system has been found to be very useful for parallel addition and subtraction of any arbitrary length operands in constant time. Using the TSD addition and multiplication modules as the basic building blocks, we develop an efficient algorithm for performing parallel TSD division in constant time. The proposed division technique uses one TSD subtraction and two TSD multiplication steps. An optoelectronic correlator based architecture is suggested for implementation of the proposed TSD division algorithm, which fully exploits the parallelism and high processing speed of optics. An efficient spatial encoding scheme is used to ensure better utilization of space bandwidth product of the spatial light modulators used in the optoelectronic implementation.

A glossary of electronics and microelectronics

International Nuclear Information System (INIS)

Sautter, D.; Weinerth, H.

1990-01-01

The glossary presents terms, definitions and full-text explanations of terminology used in the following subject fields: semiconductor technology, integrated analog and digital semiconductor devices and group of devices, discrete devices including power semiconductors, electronic tubes, electronic display or read-out systems (cathode-ray tubes, liquid crystals, luminescence diodes, plasma- and magneto-optical display devices), sensors, opto-electronics (lasers, integrated optical systems, glass fibre technology, opto-electronic switches), design and circuitry, electromechanical devices; and also terminology from the fields of: solid state physics, acoustics, technical reliability, measuring and testing, entertainment electronics, electrical and magnetic materials, electronic image recording and image processing. There are over 2000 terms and corresponding explanations in the glossary, supplemented by numerous functional diagrams, tables, and figures. (orig./HP) [de

Study on optoelectronic properties of Spiro-CN for developing an efficient OLED

Science.gov (United States)

Mishra, Ashok Kumar

2018-05-01

There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) Spiro-CN (spirobifluorene skeletons) Spiro is one of these reported noble metal-free TADF molecules which offers unique optical and electronic properties arising from the efficient transition and reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the Spiro-CN compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the Spiro-CN organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

GaAs integrated circuits and heterojunction devices

Science.gov (United States)

Fowlis, Colin

1986-06-01

The state of the art of GaAs technology in the U.S. as it applies to digital and analog integrated circuits is examined. In a market projection, it is noted that whereas analog ICs now largely dominate the market, in 1994 they will amount to only 39 percent vs. 57 percent for digital ICs. The military segment of the market will remain the largest (42 percent in 1994 vs. 70 percent today). ICs using depletion-mode-only FETs can be constructed in various forms, the closest to production being BFL or buffered FET logic. Schottky diode FET logic - a lower power approach - can reach higher complexities and strong efforts are being made in this direction. Enhancement type devices appear essential to reach LSI and VLSI complexity, but process control is still very difficult; strong efforts are under way, both in the U.S. and in Japan. Heterojunction devices appear very promising, although structures are fairly complex, and special fabrication techniques, such as molecular beam epitaxy and MOCVD, are necessary. High-electron-mobility-transistor (HEMT) devices show significant performance advantages over MESFETs at low temperatures. Initial results of heterojunction bipolar transistor devices show promise for high speed A/D converter applications.

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Science.gov (United States)

Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

2018-03-01

III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

Integration of active devices on smart polymers for neural interfaces

Science.gov (United States)

Avendano-Bolivar, Adrian Emmanuel

The increasing ability to ever more precisely identify and measure neural interactions and other phenomena in the central and peripheral nervous systems is revolutionizing our understanding of the human body and brain. To facilitate further understanding, more sophisticated neural devices, perhaps using microelectronics processing, must be fabricated. Materials often used in these neural interfaces, while compatible with these fabrication processes, are not optimized for long-term use in the body and are often orders of magnitude stiffer than the tissue with which they interact. Using the smart polymer substrates described in this work, suitability for processing as well as chronic implantation is demonstrated. We explore how to integrate reliable circuitry onto these flexible, biocompatible substrates that can withstand the aggressive environment of the body. To increase the capabilities of these devices beyond individual channel sensing and stimulation, active electronics must also be included onto our systems. In order to add this functionality to these substrates and explore the limits of these devices, we developed a process to fabricate single organic thin film transistors with mobilities up to 0.4 cm2/Vs and threshold voltages close to 0V. A process for fabricating organic light emitting diodes on flexible substrates is also addressed. We have set a foundation and demonstrated initial feasibility for integrating multiple transistors onto thin-film flexible devices to create new applications, such as matrix addressable functionalized electrodes and organic light emitting diodes. A brief description on how to integrate waveguides for their use in optogenetics is addressed. We have built understanding about device constraints on mechanical, electrical and in vivo reliability and how various conditions affect the electronics' lifetime. We use a bi-layer gate dielectric using an inorganic material such as HfO 2 combined with organic Parylene-c. A study of

Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

Directory of Open Access Journals (Sweden)

Adrian Iovan

2012-12-01

Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

Integrated neuron circuit for implementing neuromorphic system with synaptic device

Science.gov (United States)

Lee, Jeong-Jun; Park, Jungjin; Kwon, Min-Woo; Hwang, Sungmin; Kim, Hyungjin; Park, Byung-Gook

2018-02-01

In this paper, we propose and fabricate Integrate & Fire neuron circuit for implementing neuromorphic system. Overall operation of the circuit is verified by measuring discrete devices and the output characteristics of the circuit. Since the neuron circuit shows asymmetric output characteristic that can drive synaptic device with Spike-Timing-Dependent-Plasticity (STDP) characteristic, the autonomous weight update process is also verified by connecting the synaptic device and the neuron circuit. The timing difference of the pre-neuron and the post-neuron induce autonomous weight change of the synaptic device. Unlike 2-terminal devices, which is frequently used to implement neuromorphic system, proposed scheme of the system enables autonomous weight update and simple configuration by using 4-terminal synapse device and appropriate neuron circuit. Weight update process in the multi-layer neuron-synapse connection ensures implementation of the hardware-based artificial intelligence, based on Spiking-Neural- Network (SNN).

Field-Programmable Logic Devices with Optical Input Output

Science.gov (United States)

Szymanski, Ted H.; Saint-Laurent, Martin; Tyan, Victor; Au, Albert; Supmonchai, Boonchuay

2000-02-01

A field-programmable logic device (FPLD) with optical I O is described. FPLD s with optical I O can have their functionality specified in the field by means of downloading a control-bit stream and can be used in a wide range of applications, such as optical signal processing, optical image processing, and optical interconnects. Our device implements six state-of-the-art dynamically programmable logic arrays (PLA s) on a 2 mm 2 mm die. The devices were fabricated through the Lucent Technologies Advanced Research Projects Agency Consortium for Optical and Optoelectronic Technologies in Computing (Lucent ARPA COOP) workshop by use of 0.5- m complementary metal-oxide semiconductor self-electro-optic device technology and were delivered in 1998. All devices are fully functional: The electronic data paths have been verified at 200 MHz, and optical tests are pending. The device has been programmed to implement a two-stage optical switching network with six 4 4 crossbar switches, which can realize more than 190 10 6 unique programmable input output permutations. The same device scaled to a 2 cm 2 cm substrate could support as many as 4000 optical I O and 1 Tbit s of optical I O bandwidth and offer fully programmable digital functionality with approximately 110,000 programmable logic gates. The proposed optoelectronic FPLD is also ideally suited to realizing dense, statically reconfigurable crossbar switches. We describe an attractive application area for such devices: a rearrangeable three-stage optical switch for a wide-area-network backbone, switching 1000 traffic streams at the OC-48 data rate and supporting several terabits of traffic.

Nanostructure of highly aromatic graphene nanosheets -- From optoelectronics to electrochemical energy storage applications

Science.gov (United States)

Biswas, Sanjib

aligned network designed to maximize device performance. Monolayers of large sized graphene nanosheets function as highly electrically conducting current collectors within a mesoporous network of smaller graphene nanosheets for improved rate capability of the electrical double layer capacitor (EDLC) electrode. This nano-architecture produces an electrode with superior performance for high power EDLC applications: a high frequency capacitative response; a nearly rectangular cyclic voltammogram at a scanning rate of 1000 mv/sec; a rapid current response; small equivalent series resistance (ESR); and fast ionic diffusion. Integration of this nanostructured graphene nanosheet architecture with conductive polymers or metal oxide nanostructurcs was also investigated to produce similar multilayered structures for electrochemical energy storage applications. These inexpensive graphene nanosheets coupled with this facile and robust nanostructuring process make both this new material and method highly advantageous for many potential applications ranging from optoelectronics to high power electrochemical energy storage applications.

Integrated Photoelectrochemical Solar Energy Conversion and Organic Redox Flow Battery Devices

KAUST Repository

Li, Wenjie

2016-09-21

Building on regenerative photoelectrochemical solar cells and emerging electrochemical redox flow batteries (RFBs), more efficient, scalable, compact, and cost-effective hybrid energy conversion and storage devices could be realized. An integrated photoelectrochemical solar energy conversion and electrochemical storage device is developed by integrating regenerative silicon solar cells and 9,10-anthraquinone-2,7-disulfonic acid (AQDS)/1,2-benzoquinone-3,5-disulfonic acid (BQDS) RFBs. The device can be directly charged by solar light without external bias, and discharged like normal RFBs with an energy storage density of 1.15 Wh L−1 and a solar-to-output electricity efficiency (SOEE) of 1.7 % over many cycles. The concept exploits a previously undeveloped design connecting two major energy technologies and promises a general approach for storing solar energy electrochemically with high theoretical storage capacity and efficiency.

Evaluating and Predicting Patient Safety for Medical Devices With Integral Information Technology

Science.gov (United States)

2005-01-01

323 Evaluating and Predicting Patient Safety for Medical Devices with Integral Information Technology Jiajie Zhang, Vimla L. Patel, Todd R...errors are due to inappropriate designs for user interactions, rather than mechanical failures. Evaluating and predicting patient safety in medical ...the users on the identified trouble spots in the devices. We developed two methods for evaluating and predicting patient safety in medical devices

Framework for the Integration of Mobile Device Features in PLM

OpenAIRE

Hopf, Jens Michael

2016-01-01

Currently, companies have covered their business processes with stationary workstations while mobile business applications have limited relevance. Companies can cover their overall business processes more time-efficiently and cost-effectively when they integrate mobile users in workflows using mobile device features. The objective is a framework that can be used to model and control business applications for PLM processes using mobile device features to allow a totally new user experience.

Heterogenous integration of a thin-film GaAs photodetector and a microfluidic device on a silicon substrate

International Nuclear Information System (INIS)

Song, Fuchuan; Xiao, Jing; Udawala, Fidaali; Seo, Sang-Woo

2011-01-01

In this paper, heterogeneous integration of a III–V semiconductor thin-film photodetector (PD) with a microfluidic device is demonstrated on a SiO 2 –Si substrate. Thin-film format of optical devices provides an intimate integration of optical functions with microfluidic devices. As a demonstration of a multi-material and functional system, the biphasic flow structure in the polymeric microfluidic channels was co-integrated with a III–V semiconductor thin-film PD. The fluorescent drops formed in the microfluidic device are successfully detected with an integrated thin-film PD on a silicon substrate. The proposed three-dimensional integration structure is an alternative approach to combine optical functions with microfluidic functions on silicon-based electronic functions.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

Science.gov (United States)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

Beyond Donor-Acceptor (D-A) Approach: Structure-Optoelectronic Properties-Organic Photovoltaic Performance Correlation in New D-A1 -D-A2 Low-Bandgap Conjugated Polymers.

Science.gov (United States)

Chochos, Christos L; Drakopoulou, Sofia; Katsouras, Athanasios; Squeo, Benedetta M; Sprau, Christian; Colsmann, Alexander; Gregoriou, Vasilis G; Cando, Alex-Palma; Allard, Sybille; Scherf, Ullrich; Gasparini, Nicola; Kazerouni, Negar; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-04-01

Low-bandgap near-infrared polymers are usually synthesized using the common donor-acceptor (D-A) approach. However, recently polymer chemists are introducing more complex chemical concepts for better fine tuning of their optoelectronic properties. Usually these studies are limited to one or two polymer examples in each case study so far, though. In this study, the dependence of optoelectronic and macroscopic (device performance) properties in a series of six new D-A 1 -D-A 2 low bandgap semiconducting polymers is reported for the first time. Correlation between the chemical structure of single-component polymer films and their optoelectronic properties has been achieved in terms of absorption maxima, optical bandgap, ionization potential, and electron affinity. Preliminary organic photovoltaic results based on blends of the D-A 1 -D-A 2 polymers as the electron donor mixed with the fullerene derivative [6,6]-phenyl-C 71 -butyric acid methyl ester demonstrate power conversion efficiencies close to 4% with short-circuit current densities (J sc ) of around 11 mA cm -2 , high fill factors up to 0.70, and high open-circuit voltages (V oc s) of 0.70 V. All the devices are fabricated in an inverted architecture with the photoactive layer processed in air with doctor blade technique, showing the compatibility with roll-to-roll large-scale manufacturing processes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Integrated Photoelectrochemical Solar Energy Conversion and Organic Redox Flow Battery Devices.

Science.gov (United States)

Li, Wenjie; Fu, Hui-Chun; Li, Linsen; Cabán-Acevedo, Miguel; He, Jr-Hau; Jin, Song

2016-10-10

Building on regenerative photoelectrochemical solar cells and emerging electrochemical redox flow batteries (RFBs), more efficient, scalable, compact, and cost-effective hybrid energy conversion and storage devices could be realized. An integrated photoelectrochemical solar energy conversion and electrochemical storage device is developed by integrating regenerative silicon solar cells and 9,10-anthraquinone-2,7-disulfonic acid (AQDS)/1,2-benzoquinone-3,5-disulfonic acid (BQDS) RFBs. The device can be directly charged by solar light without external bias, and discharged like normal RFBs with an energy storage density of 1.15 Wh L -1 and a solar-to-output electricity efficiency (SOEE) of 1.7 % over many cycles. The concept exploits a previously undeveloped design connecting two major energy technologies and promises a general approach for storing solar energy electrochemically with high theoretical storage capacity and efficiency. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

Fabricating a multi-level barrier-integrated microfluidic device using grey-scale photolithography

International Nuclear Information System (INIS)

Nam, Yoonkwang; Kim, Minseok; Kim, Taesung

2013-01-01

Most polymer-replica-based microfluidic devices are mainly fabricated by using standard soft-lithography technology so that multi-level masters (MLMs) require multiple spin-coatings, mask alignments, exposures, developments, and bakings. In this paper, we describe a simple method for fabricating MLMs for planar microfluidic channels with multi-level barriers (MLBs). A single photomask is necessary for standard photolithography technology to create a polydimethylsiloxane grey-scale photomask (PGSP), which adjusts the total amount of UV absorption in a negative-tone photoresist via a wide range of dye concentrations. Since the PGSP in turn adjusts the degree of cross-linking of the photoresist, this method enables the fabrication of MLMs for an MLB-integrated microfluidic device. Since the PGSP-based soft-lithography technology provides a simple but powerful fabrication method for MLBs in a microfluidic device, we believe that the fabrication method can be widely used for micro total analysis systems that benefit from MLBs. We demonstrate an MLB-integrated microfluidic device that can separate microparticles. (paper)

FY 1999 Report on research and development project results of industrial science and technology. Research and development of quantum functional devices; 1999 nendo ryoshika kino soshi no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

Described herein are the FY 1999 research and development results of quantum functional devices. This project is aimed at establishment of the basic technologies related to quantum functional devices, which utilize various quantum mechanical effects appearing in superfine regions, for development of the microelectronics technologies serving as the bases for superhigh-speed, superhigh-function information processing. The technologies are developed for advancing the elementary devices by quantum functions and development of integrated devices. The results include development, on a trial basis, of the world smallest MOS transistor with a gate length of 10 nm or less and analysis of its behavior, improved characteristics of the tunnel devices, and development, on a trial basis, of a semiconductor memory working based on the principle of single electron capturing/releasing and evaluation thereof. The device-building techniques are developed. The results include demonstration of the logic circuit which controls a small number of electrons, and development of an opto-electronic device on a trial basis, which are the world first results. Progresses are noted in confirmation of behavior of the 3-value basic logic circuit which uses an InGaAs-based tunnel device, demonstration of behavior of the SRAM circuit which uses ME-RHET device, confirmation of possibility of terabit-size memory integration, advancing performance of the quantum MMIC, and designs of the single electron-CMOS integrated circuit. (NEDO)

Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch=chalcogen) and La2CdO2Se2

International Nuclear Information System (INIS)

Hiramatsu, Hidenori; Hirano, Masahiro; Kamioka, Hayato; Ueda, Kazushige; Ohta, Hiromichi; Kamiya, Toshio; Hosono, Hideo

2006-01-01

Electronic and optical properties of widegap oxychalcogenides, LaCuOCh (Ch chalcogen) and La 2 CdO 2 Se 2 , are reviewed with a focus on those relevant to their layered crystal structures, including high hole mobility, degenerate p-type conduction, room temperature exciton, and large third order optical nonlinearity. In particular, the widegap p-type metallic conduction was realized in Mg-doped LaCuOSe: the first demonstration among any class of widegap materials including GaN:Mg. Furthermore, we demonstrate the room temperature operation of a blue light-emitting diode using a pn hetero-junction composed of a LaCuOSe epilayer and an n-type amorphous InGaZn 5 O 8 . Those results strongly suggest that a series of the layered oxychalcogenides are applicable to the light-emitting layers in opto-electronic devices that operate in the ultraviolet-blue region as well as to transparent p-type conductors. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Silicon integrated circuits advances in materials and device research

CERN Document Server

Kahng, Dawon

1981-01-01

Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

Optoelectronic switch matrix as a look-up table for residue arithmetic.

Science.gov (United States)

Macdonald, R I

1987-10-01

The use of optoelectronic matrix switches to perform look-up table functions in residue arithmetic processors is proposed. In this application, switchable detector arrays give the advantage of a greatly reduced requirement for optical sources by comparison with previous optoelectronic residue processors.

CARBON-FIBRE-REINFORCED POLYMER PARTS EFFECT ON SPACECRAFT OPTOELECTRONIC MODULE LENS SCATTERING

Directory of Open Access Journals (Sweden)

S. S. Kolasha

2016-01-01

Full Text Available Spacecraft optoelectronic modules traditionally have aluminum alloy or titanium alloy casing which substantial weight increases fuel consumption required to put them into orbit and, consequently, total cost of the project. Carbon fiber reinforced polymer based composite constructive materials is an efficient solution that allows reducing weight and dimensions of large optoelectronic modules 1,5–3 times and the coefficient of linear thermal expansion 15–20 times if compared with metals. Optical characteristic is a crucial feature of carbon-fibre-reinforced polymer that determines composite material interaction with electromagnetic emission within the optical range. This work was intended to develop a method to evaluate Carbon fiber reinforced polymer optoelectronic modules casing effect on lens scattering by computer simulation with Zemax application software package. Degrees of scattered, reflected and absorbed radiant flux effect on imaging quality are described here. The work included experimental study in order to determine bidirectional reflectance distribution function by goniometric method for LUP-0.1 carbon fabric check test pieces of EDT-69U epoxy binder with EPOFLEX-0.4 glue layer and 5056-3.5-23-A aluminium honeycomb filler. The scattered emission was registered within a hemisphere above the check test piece surface. Optical detection direction was determined with zenith (0º < θ < 90º and azimuth (0º < φ < 180º angles with 10° increment. The check test piece surface was proved to scatter emission within a narrow angle range (approximately 20° with clear directivity. Carbon fiber reinforced polymers was found to feature integrated reflectance coefficient 3 to 4 times greater than special coatings do. 

Toward Wearable Self-Charging Power Systems: The Integration of Energy-Harvesting and Storage Devices.

Science.gov (United States)

Pu, Xiong; Hu, Weiguo; Wang, Zhong Lin

2018-01-01

One major challenge for wearable electronics is that the state-of-the-art batteries are inadequate to provide sufficient energy for long-term operations, leading to inconvenient battery replacement or frequent recharging. Other than the pursuit of high energy density of secondary batteries, an alternative approach recently drawing intensive attention from the research community, is to integrate energy-generation and energy-storage devices into self-charging power systems (SCPSs), so that the scavenged energy can be simultaneously stored for sustainable power supply. This paper reviews recent developments in SCPSs with the integration of various energy-harvesting devices (including piezoelectric nanogenerators, triboelectric nanogenerators, solar cells, and thermoelectric nanogenerators) and energy-storage devices, such as batteries and supercapacitors. SCPSs with multiple energy-harvesting devices are also included. Emphasis is placed on integrated flexible or wearable SCPSs. Remaining challenges and perspectives are also examined to suggest how to bring the appealing SCPSs into practical applications in the near future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Integrated nanohole array surface plasmon resonance sensing device using a dual-wavelength source

International Nuclear Information System (INIS)

Escobedo, C; Vincent, S; Choudhury, A I K; Campbell, J; Gordon, R; Brolo, A G; Sinton, D

2011-01-01

In this paper, we demonstrate a compact integrated nanohole array-based surface plasmon resonance sensing device. The unit includes a LED light source, driving circuitry, CCD detector, microfluidic network and computer interface, all assembled from readily available commercial components. A dual-wavelength LED scheme was implemented to increase spectral diversity and isolate intensity variations to be expected in the field. The prototype shows bulk sensitivity of 266 pixel intensity units/RIU and a limit of detection of 6 × 10 −4 RIU. Surface binding tests were performed, demonstrating functionality as a surface-based sensing system. This work is particularly relevant for low-cost point-of-care applications, especially those involving multiple tests and field studies. While nanohole arrays have been applied to many sensing applications, and their suitability to device integration is well established, this is the first demonstration of a fully integrated nanohole array-based sensing device.

Power and hydrogen production from ammonia in a micro-thermophotovoltaic device integrated with a micro-reformer

International Nuclear Information System (INIS)

Um, Dong Hyun; Kim, Tae Young; Kwon, Oh Chae

2014-01-01

Power and hydrogen (H 2 ) production by burning and reforming ammonia (NH 3 ) in a micro-TPV (microscale-thermophotovoltaic) device integrated with a micro-reformer is studied experimentally. A heat-recirculating micro-emitter with the cyclone and helical adapters that enhance the residence time of fed fuel-air mixtures and uniform burning burns H 2 -added NH 3 -air mixtures. A micro-reformer that converts NH 3 to H 2 using ruthenium as a catalyst surrounds the micro-emitter as a heat source. The micro-reformer is surrounded by a chamber, the inner and outer walls of which have installations of gallium antimonide photovoltaic cells and cooling fins. For the micro-reformer-integrated micro-TPV device the maximum overall efficiency of 8.1% with electrical power of 4.5 W and the maximum NH 3 conversion rate of 96.0% with the H 2 production rate of 22.6 W (based on lower heating value) are obtained, indicating that the overall efficiency is remarkably enhanced compared with 2.0% when the micro-TPV device operates alone. This supports the potential of improving the overall efficiency of a micro-TPV device through integrating it with a micro-reformer. Also, the feasibility of using NH 3 as a carbon-free fuel for both burning and reforming in practical micro power and H 2 generation devices has been demonstrated. - Highlights: • Performance of micro-TPV device integrated with micro-reformer is evaluated. • Feasibility of using NH 3 –H 2 blends in integrated system has been demonstrated. • Integration with micro-reformer improves performance of micro-TPV device. • Maximum overall efficiency of 8.1% is found compared with 2.0% without integration

Growth, Properties and Applications of Mo Ox Thin-Films Deposited by Reactive Sputtering

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis

properties of metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties, and thus also their integration in novel optoelectronic devices. In this work, MoOx thin-films with various different phases and compositions were prepared by direct-current reactive...... molecules DBP and C70 are also covered in this work. The devices show interesting characteristics for very thin layers of the as-deposited MoOx films, displaying similar device efficiencies as those of in situ prepared MoOx thin-films formed from thermal evaporation. For the annealed MoOx films......Transition metal-oxide (TMOs) thin-films are commonly used in optoelectronic devices such as in photovoltaics and light emitting diodes, using both organic, inorganic and hybrid technologies. In such devices, TMOs typically act as an interfacial layer, where its functionality is to facilitate hole...

Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

Science.gov (United States)

Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien

2017-11-01

With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

Functionalization of Semiconductor Nanomaterials for Optoelectronic Devices And Components

Science.gov (United States)

2015-03-04

pristine single and multiwalled carbon nanotubes as different stacking layers in bulk heterojunction solar cells,” M. Alam Khan, Michio Matsumura and M. O...Phys. Lett. 102, 051904 (2013). http://dx.doi.org/10.1063/1.4789908 13. “Synthesis of iron pyrite nanocrystals utilizing trioctylphosphine oxide ...O. Manasreh, IEEE Electron Device Letters (Submitted). 20. “Characteristics of p-ZnO/n-GaN heterojunction photodetector,” Abla Al-Zouhbi, N. S

Practical opto-electronics an illustrated guide for the laboratory

CERN Document Server

Protopopov, Vladimir

2014-01-01

This book explains how to create opto-electronic systems in a most efficient way, avoiding typical mistakes. It covers light detection techniques, imaging, interferometry, spectroscopy, modulation-demodulation, heterodyning, beam steering, and many other topics common to laboratory applications. The focus is made on self-explanatory figures rather than on words. The book guides the reader through the entire process of creating problem-specific opto-electronic systems, starting from optical source, through beam transportation optical arrangement, to photodetector and data acquisition system. The relevant basics of beam propagation and computer-based raytracing routines are also explained, and sample codes are listed. the book teaches important know-how and practical tricks that are never disclosed in scientific publications.  The book can become the reader's personal adviser in the world of opto-electronics and navigator in the ocean of the market of optical components and systems. Succinct, well-illustrate...

A design approach for integrating thermoelectric devices using topology optimization

DEFF Research Database (Denmark)

Soprani, Stefano; Haertel, Jan Hendrik Klaas; Lazarov, Boyan Stefanov

2016-01-01

Efficient operation of thermoelectric devices strongly relies on the thermal integration into the energy conversion system in which they operate. Effective thermal integration reduces the temperature differences between the thermoelectric module and its thermal reservoirs, allowing the system...... to operate more efficiently. This work proposes and experimentally demonstrates a topology optimization approach as a design tool for efficient integration of thermoelectric modules into systems with specific design constraints. The approach allows thermal layout optimization of thermoelectric systems...... for different operating conditions and objective functions, such as temperature span, efficiency, and power recoveryrate. As a specific application, the integration of a thermoelectric cooler into the electronics section ofa downhole oil well intervention tool is investigated, with the objective of minimizing...

Semiconductor Devices Inspired By and Integrated With Biology

Energy Technology Data Exchange (ETDEWEB)

Rogers, John [University of Illinois

2012-04-25

Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt biologically inspired designs or require intimate integration with the human body. This talk describes the development of ideas for electronics that offer the performance of state-of-the-art, wafer- based systems but with the mechanical properties of a rubber band. We explain the underlying materials science and mechanics of these approaches, and illustrate their use in (1) bio- integrated, ‘tissue-like’ electronics with unique capabilities for mapping cardiac and neural electrophysiology, and (2) bio-inspired, ‘eyeball’ cameras with exceptional imaging properties enabled by curvilinear, Petzval designs.

Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices

KAUST Repository

Majid, Mohammed Abdul

2012-12-01

The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.

Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices

KAUST Repository

Majid, Mohammed Abdul; Hugues, M.; Vézian, S.; Childs, D. T. D.; Hogg, R. A.

2012-01-01

The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.

Integrating mobile devices into nursing curricula: opportunities for implementation using Rogers' Diffusion of Innovation model.

Science.gov (United States)

Doyle, Glynda J; Garrett, Bernie; Currie, Leanne M

2014-05-01

To identify studies reporting mobile device integration into undergraduate and graduate nursing curricula. To explore the potential use of Rogers' Diffusion of Innovation model as a framework to guide implementation of mobile devices into nursing curricula. Literature review and thematic categorization. Literature published up until June 2013 was searched using EBSCO, PubMed, and Google Scholar. The literature was reviewed for research articles pertaining to mobile device use in nursing education. Research articles were grouped by study design, and articles were classified by: 1) strategies for individual adopters and 2) strategies for organizations. Rogers' Diffusion of Innovation theory was used to categorize reported implementation strategies. Fifty-two research studies were identified. Strategies for implementation were varied, and challenges to integrating mobile devices include lack of administrative support and time/funding to educate faculty as well as students. Overall, the use of mobile devices appears to provide benefits to nursing students; however the research evidence is limited. Anticipating challenges and ensuring a well laid out strategic plan can assist in supporting successful integration of mobile devices. Crown Copyright © 2013. Published by Elsevier Ltd. All rights reserved.

Charge-coupled device area detector for low energy electrons

Czech Academy of Sciences Publication Activity Database

Horáček, Miroslav

2003-01-01

Roč. 74, č. 7 (2003), s. 3379 - 3384 ISSN 0034-6748 R&D Projects: GA ČR GA102/00/P001 Institutional research plan: CEZ:AV0Z2065902 Keywords : low energy electrons * charged-coupled device * detector Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.343, year: 2003

A dynamically tunable plasmonic multi-functional device based on graphene nano-sheet pair arrays

Science.gov (United States)

Wang, Wei; Meng, Zhao; Liang, Ruisheng; Chen, Shijie; Ding, Li; Wang, Faqiang; Liu, Hongzhan; Meng, Hongyun; Wei, Zhongchao

2018-05-01

Dynamically tunable plasmonic multi-functional is particularly desirable for various nanotechnological applications. In this paper, graphene nano-sheet pair arrays separated by a substrate, which can act as a dynamically tunable plasmonic band stop filter with transmission at resonance wavelength lower than 1%, a high sensitivity refractive index sensor with sensitivity up to 4879 nm/RIU, figure of merit of 40.66 and a two circuit optical switch with the modulation depth up to 0.998, are proposed and numerically investigated. These excellent optical performances are calculated by using FDTD numerical modeling and theoretical deduction. Simulation results show that a slight variation of chemical potential of the graphene nano-sheet can achieve significant resonance wavelength shifts. In additional, the resonance wavelength and transmission of this plasmonic device can be tuned easily by two voltages owing to the simple patterned graphene. These studies may have great potential in fabrication of multi-functional and dynamically tunable optoelectronic integrated devices.

Integrated microwave photonics for phase modulated systems

NARCIS (Netherlands)

Marpaung, D.A.I.; Roeloffzen, C.G.H.

2012-01-01

For the last 25 years, microwave photonic (MWP) systems and links have relied almost exclusively on discrete optoelectronic devices, standard optical fibers and fiber-based components. With this concept, various functionalities like RF signal generation, distribution, processing and analysis have

Direct Vapor Growth of Perovskite CsPbBr3 Nanoplate Electroluminescence Devices.

Science.gov (United States)

Hu, Xuelu; Zhou, Hong; Jiang, Zhenyu; Wang, Xiao; Yuan, Shuangping; Lan, Jianyue; Fu, Yongping; Zhang, Xuehong; Zheng, Weihao; Wang, Xiaoxia; Zhu, Xiaoli; Liao, Lei; Xu, Gengzhao; Jin, Song; Pan, Anlian

2017-10-24

Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr 3 nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr 3 nanoplates on prepatterned indium tin oxide (ITO) electrodes via a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of ∼3 V, a narrow full width at half-maximum of 22 nm, and an external quantum efficiency of ∼0.2%. Moreover, through scanning photocurrent microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr 3 Schottky barriers with highly efficient carrier injection is essential in realizing the EL. The formation of the ITO/p-type CsPbBr 3 Schottky diode is also confirmed by the corresponding transistor characteristics. The achievement of EL nanodevices enabled by directly grown perovskite nanostructures could find applications in on-chip integrated photonics circuits and systems.

p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

International Nuclear Information System (INIS)

Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

2013-01-01

Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm 2 V −1 s −1 and a hole concentration of 1.67 × 10 17  cm −3 , respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application

Advanced Optoelectronic Components for All-Optical Networks

National Research Council Canada - National Science Library

Shapiro, Jeffrey H

2002-01-01

Under APOSR Grant F49620-96-1-0126, 'Advanced Optoelectronic Components for All-Optical Networks', we have worked to develop key technologies and components to substantially improve the performance...

Lithography for enabling advances in integrated circuits and devices.

Science.gov (United States)

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Integrated visualization of simulation results and experimental devices in virtual-reality space

International Nuclear Information System (INIS)

Ohtani, Hiroaki; Ishiguro, Seiji; Shohji, Mamoru; Kageyama, Akira; Tamura, Yuichi

2011-01-01

We succeeded in integrating the visualization of both simulation results and experimental device data in virtual-reality (VR) space using CAVE system. Simulation results are shown using Virtual LHD software, which can show magnetic field line, particle trajectory, and isosurface of plasma pressure of the Large Helical Device (LHD) based on data from the magnetohydrodynamics equilibrium simulation. A three-dimensional mouse, or wand, determines the initial position and pitch angle of a drift particle or the starting point of a magnetic field line, interactively in the VR space. The trajectory of a particle and the stream-line of magnetic field are calculated using the Runge-Kutta-Huta integration method on the basis of the results obtained after pointing the initial condition. The LHD vessel is objectively visualized based on CAD-data. By using these results and data, the simulated LHD plasma can be interactively drawn in the objective description of the LHD experimental vessel. Through this integrated visualization, it is possible to grasp the three-dimensional relationship of the positions between the device and plasma in the VR space, opening a new path in contribution to future research. (author)

Optical device terahertz integration in a two-dimensional-three-dimensional heterostructure.

Science.gov (United States)

Feng, Zhifang; Lin, Jie; Feng, Shuai

2018-01-10

The transmission properties of an off-planar integrated circuit including two wavelength division demultiplexers are designed, simulated, and analyzed in detail by the finite-difference time-domain method. The results show that the wavelength selection for different ports (0.404[c/a] at B 2 port, 0.389[c/a] at B 3 port, and 0.394[c/a] at B 4 port) can be realized by adjusting the parameters. It is especially important that the off-planar integration between two complex devices is also realized. These simulated results give valuable promotions in the all-optical integrated circuit, especially in compact integration.

Highly functional tunnelling devices integrated in 3D

DEFF Research Database (Denmark)

Wernersson, Lars-Erik; Lind, Erik; Lindström, Peter

2003-01-01

a new type of tunnelling transistor, namely a resonant-tunnelling permeable base transistor. A simple model based on a piece-wise linear approximation is used in Cadence to describe the current-voltage characteristics of the transistor. This model is further introduced into a small signal equivalent...... simultaneously on both tunnelling structures and the obtained characteristics are the result of the interplay between the two tunnelling structures and the gate. An equivalent circuit model is developed and we show how this interaction influences the current-voltage characteristics. The gate may be used......We present a new technology for integrating tunnelling devices in three dimensions. These devices are fabricated by the combination of the growth of semiconductor heterostructures with the controlled introduction of metallic elements into an epitaxial layer by an overgrowth technique. First, we use...

Integration of semiconductor and ceramic superconductor devices for microwave applications

International Nuclear Information System (INIS)

Klopman, B.B.G.; Weijers, H.W.; Gao, J.; Gerritsma, G.J.; Rogalla, H.

1991-01-01

Due to the very low-loss properties of ceramic superconductors high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature, facilitates the integration with semiconductor devices. Examples are bandpass amplifiers, microwave-operated SQUIDs combined with GaAs preamplifiers, detectors, and MOSFET low-frequency amplifiers. This paper discusses the design of such circuits on a single one inch alumina substrate using surface mount techniques. Furthermore data on circuits that have been realized in our laboratory will be presented

Growth of Si nanocrystals on alumina and integration in memory devices

Science.gov (United States)

Baron, T.; Fernandes, A.; Damlencourt, J. F.; De Salvo, B.; Martin, F.; Mazen, F.; Haukka, S.

2003-06-01

We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm-2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics.

Optically controlled multiple switching operations of DNA biopolymer devices

International Nuclear Information System (INIS)

Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu; Fruk, Ljiljana; Hung, Yu-Chueh

2015-01-01

We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices

Optically controlled multiple switching operations of DNA biopolymer devices

Energy Technology Data Exchange (ETDEWEB)

Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu [Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Fruk, Ljiljana [Department of Chemical Engineering and Biotechnology, University of Cambridge, Pembroke Street, Cambridge CB2 3RA (United Kingdom); Hung, Yu-Chueh, E-mail: ychung@ee.nthu.edu.tw [Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2015-12-21

We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices.

Flexible Synthetic Semiconductor Applied in Optoelectronic Organic Sensor

Directory of Open Access Journals (Sweden)

Andre F. S. Guedes

2017-06-01

Full Text Available The synthesis and application of new nanostructured organic materials, for the development of technology based on organic devices, have taken great interest from the scientific community. The greatest interest in studying organic semiconductor materials has been connected to its already known potential applications, such as: batteries, organic solar cells, flexible organic solar cells, organic light emitting diodes, organic sensors and others. Phototherapy makes use of different radiation sources, and the treatment of hyperbilirubinemia the most common therapeutic intervention occurs in the neonatal period. In this work we developed an organic optoelectronic sensor capable of detecting and determining the radiation dose rate emitted by the radiation source of neonatal phototherapy equipment. The sensors were developed using optically transparent substrate with Nanostructured thin film layers of Poly(9-Vinylcarbazole covered by a layer of Poly(P-Phenylene Vinylene. The samples were characterized by UV-Vis Spectroscopy, Electrical Measurements and SEM. With the results obtained from this study can be developed dosimeters organics to the neonatal phototherapy equipment.

Integrating bar-code devices with computerized MC and A systems

International Nuclear Information System (INIS)

Anderson, L.K.; Boor, M.G.; Hurford, J.M.

1998-01-01

Over the past seven years, Los Alamos National Laboratory developed several generations of computerized nuclear materials control and accountability (MC and A) systems for tracking and reporting the storage, movement, and management of nuclear materials at domestic and international facilities. During the same period, Oak Ridge National Laboratory was involved with automated data acquisition (ADA) equipment, including installation of numerous bar-code scanning stations at various facilities to serve as input devices to computerized systems. Bar-code readers, as well as other ADA devices, reduce input errors, provide faster input, and allow the capture of data in remote areas where workstations do not exist. Los Alamos National Laboratory and Oak Ridge National Laboratory teamed together to implement the integration of bar-code hardware technology with computerized MC and A systems. With the expertise of both sites, the two technologies were successfully merged with little difficulty. Bar-code input is now available with several functions of the MC and A systems: material movements within material balance areas (MBAs), material movements between MBAs, and physical inventory verification. This paper describes the various components required for the integration of these MC and A systems with the installed bar-code reader devices and the future directions for these technologies

Fabricating process of hollow out-of-plane Ni microneedle arrays and properties of the integrated microfluidic device

Science.gov (United States)

Zhu, Jun; Cao, Ying; Wang, Hong; Li, Yigui; Chen, Xiang; Chen, Di

2013-07-01

Although microfluidic devices that integrate microfluidic chips with hollow out-of-plane microneedle arrays have many advantages in transdermal drug delivery applications, difficulties exist in their fabrication due to the special three-dimensional structures of hollow out-of-plane microneedles. A new, cost-effective process for the fabrication of a hollow out-of-plane Ni microneedle array is presented. The integration of PDMS microchips with the Ni hollow microneedle array and the properties of microfluidic devices are also presented. The integrated microfluidic devices provide a new approach for transdermal drug delivery.

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

Science.gov (United States)

Georgiades, Nikos P.; Polzik, Eugene S.; Kimble, H. Jeff

1999-02-02

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

Process automation system for integration and operation of Large Volume Plasma Device

International Nuclear Information System (INIS)

Sugandhi, R.; Srivastava, P.K.; Sanyasi, A.K.; Srivastav, Prabhakar; Awasthi, L.M.; Mattoo, S.K.

2016-01-01

Highlights: • Analysis and design of process automation system for Large Volume Plasma Device (LVPD). • Data flow modeling for process model development. • Modbus based data communication and interfacing. • Interface software development for subsystem control in LabVIEW. - Abstract: Large Volume Plasma Device (LVPD) has been successfully contributing towards understanding of the plasma turbulence driven by Electron Temperature Gradient (ETG), considered as a major contributor for the plasma loss in the fusion devices. Large size of the device imposes certain difficulties in the operation, such as access of the diagnostics, manual control of subsystems and large number of signals monitoring etc. To achieve integrated operation of the machine, automation is essential for the enhanced performance and operational efficiency. Recently, the machine is undergoing major upgradation for the new physics experiments. The new operation and control system consists of following: (1) PXIe based fast data acquisition system for the equipped diagnostics; (2) Modbus based Process Automation System (PAS) for the subsystem controls and (3) Data Utilization System (DUS) for efficient storage, processing and retrieval of the acquired data. In the ongoing development, data flow model of the machine’s operation has been developed. As a proof of concept, following two subsystems have been successfully integrated: (1) Filament Power Supply (FPS) for the heating of W- filaments based plasma source and (2) Probe Positioning System (PPS) for control of 12 number of linear probe drives for a travel length of 100 cm. The process model of the vacuum production system has been prepared and validated against acquired pressure data. In the next upgrade, all the subsystems of the machine will be integrated in a systematic manner. The automation backbone is based on 4-wire multi-drop serial interface (RS485) using Modbus communication protocol. Software is developed on LabVIEW platform using

Process automation system for integration and operation of Large Volume Plasma Device

Energy Technology Data Exchange (ETDEWEB)

Sugandhi, R., E-mail: ritesh@ipr.res.in; Srivastava, P.K.; Sanyasi, A.K.; Srivastav, Prabhakar; Awasthi, L.M.; Mattoo, S.K.

2016-11-15

Highlights: • Analysis and design of process automation system for Large Volume Plasma Device (LVPD). • Data flow modeling for process model development. • Modbus based data communication and interfacing. • Interface software development for subsystem control in LabVIEW. - Abstract: Large Volume Plasma Device (LVPD) has been successfully contributing towards understanding of the plasma turbulence driven by Electron Temperature Gradient (ETG), considered as a major contributor for the plasma loss in the fusion devices. Large size of the device imposes certain difficulties in the operation, such as access of the diagnostics, manual control of subsystems and large number of signals monitoring etc. To achieve integrated operation of the machine, automation is essential for the enhanced performance and operational efficiency. Recently, the machine is undergoing major upgradation for the new physics experiments. The new operation and control system consists of following: (1) PXIe based fast data acquisition system for the equipped diagnostics; (2) Modbus based Process Automation System (PAS) for the subsystem controls and (3) Data Utilization System (DUS) for efficient storage, processing and retrieval of the acquired data. In the ongoing development, data flow model of the machine’s operation has been developed. As a proof of concept, following two subsystems have been successfully integrated: (1) Filament Power Supply (FPS) for the heating of W- filaments based plasma source and (2) Probe Positioning System (PPS) for control of 12 number of linear probe drives for a travel length of 100 cm. The process model of the vacuum production system has been prepared and validated against acquired pressure data. In the next upgrade, all the subsystems of the machine will be integrated in a systematic manner. The automation backbone is based on 4-wire multi-drop serial interface (RS485) using Modbus communication protocol. Software is developed on LabVIEW platform using

Smart time-pulse coding photoconverters as basic components 2D-array logic devices for advanced neural networks and optical computers

Science.gov (United States)

Krasilenko, Vladimir G.; Nikolsky, Alexander I.; Lazarev, Alexander A.; Michalnichenko, Nikolay N.

2004-04-01

The article deals with a conception of building arithmetic-logic devices (ALD) with a 2D-structure and optical 2D-array inputs-outputs as advanced high-productivity parallel basic operational training modules for realization of basic operation of continuous, neuro-fuzzy, multilevel, threshold and others logics and vector-matrix, vector-tensor procedures in neural networks, that consists in use of time-pulse coding (TPC) architecture and 2D-array smart optoelectronic pulse-width (or pulse-phase) modulators (PWM or PPM) for transformation of input pictures. The input grayscale image is transformed into a group of corresponding short optical pulses or time positions of optical two-level signal swing. We consider optoelectronic implementations of universal (quasi-universal) picture element of two-valued ALD, multi-valued ALD, analog-to-digital converters, multilevel threshold discriminators and we show that 2D-array time-pulse photoconverters are the base elements for these devices. We show simulation results of the time-pulse photoconverters as base components. Considered devices have technical parameters: input optical signals power is 200nW_200μW (if photodiode responsivity is 0.5A/W), conversion time is from tens of microseconds to a millisecond, supply voltage is 1.5_15V, consumption power is from tens of microwatts to a milliwatt, conversion nonlinearity is less than 1%. One cell consists of 2-3 photodiodes and about ten CMOS transistors. This simplicity of the cells allows to carry out their integration in arrays of 32x32, 64x64 elements and more.

The optoelectronic properties of a photosystem I-carbon nanotube hybrid system

International Nuclear Information System (INIS)

Kaniber, Simone M; Holleitner, Alexander W; Simmel, Friedrich C; Carmeli, Itai

2009-01-01

The photoconductance properties of photosystem I (PSI) covalently bound to carbon nanotubes (CNTs) are measured. We demonstrate that the PSI forms active electronic junctions with the CNTs, enabling control of the CNTs' photoconductance by the PSI. In order to electrically contact the photoactive proteins, a cysteine mutant is generated at one end of the PSI by genetic engineering. The CNTs are covalently bound to this reactive group using carbodiimide chemistry. We detect an enhanced photoconductance signal of the hybrid material at photon wavelengths resonant to the absorption maxima of the PSI compared to non-resonant wavelengths. The measurements prove that it is feasible to integrate photosynthetic proteins into optoelectronic circuits at the nanoscale.

The optoelectronic properties of a photosystem I-carbon nanotube hybrid system

Energy Technology Data Exchange (ETDEWEB)

Kaniber, Simone M; Holleitner, Alexander W [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany); Simmel, Friedrich C [LMU Munich, Geschwister-Scholl-Platz 1, D-80539 Muenchen (Germany); Carmeli, Itai, E-mail: holleitner@wsi.tum.d, E-mail: itai@post.tau.ac.i [Chemistry Department and NIBN, Ben Gurion University, 84105 Be' er Sheva (Israel)

2009-08-26

The photoconductance properties of photosystem I (PSI) covalently bound to carbon nanotubes (CNTs) are measured. We demonstrate that the PSI forms active electronic junctions with the CNTs, enabling control of the CNTs' photoconductance by the PSI. In order to electrically contact the photoactive proteins, a cysteine mutant is generated at one end of the PSI by genetic engineering. The CNTs are covalently bound to this reactive group using carbodiimide chemistry. We detect an enhanced photoconductance signal of the hybrid material at photon wavelengths resonant to the absorption maxima of the PSI compared to non-resonant wavelengths. The measurements prove that it is feasible to integrate photosynthetic proteins into optoelectronic circuits at the nanoscale.

Optoelectronic stereoscopic device for diagnostics, treatment, and developing of binocular vision

Science.gov (United States)

Pautova, Larisa; Elkhov, Victor A.; Ovechkis, Yuri N.

2003-08-01

Operation of the device is based on alternative generation of pictures for left and right eyes on the monitor screen. Controller gives pulses on LCG so that shutter for left or right eye opens synchronously with pictures. The device provides frequency of switching more than 100 Hz, and that is why the flickering is absent. Thus, a separate demonstration of images to the left eye or to the right one in turn is obtained for patients being unaware and creates the conditions of binocular perception clsoe to natural ones without any additional separation of vision fields. LC-cell transfer characteristic coodination with time parameters of monitor screen has enabled to improve stereo image quality. Complicated problem of computer stereo images with LC-glasses is so called 'ghosts' - noise images that come to blocked eye. We reduced its influence by adapting stereo images to phosphor and LC-cells characteristics. The device is intended for diagnostics and treatment of stabismus, amblyopia and other binocular and stereoscopic vision impairments, for cultivating, training and developing of stereoscopic vision, for measurements of horizontal and vertical phoria, phusion reserves, the stereovision acuity and some else, for fixing central scotoma borders, as well as suppression scotoma in strabismus too.

External amplitude and frequency modulation of a terahertz quantum cascade laser using metamaterial/graphene devices.

Science.gov (United States)

Kindness, S J; Jessop, D S; Wei, B; Wallis, R; Kamboj, V S; Xiao, L; Ren, Y; Braeuninger-Weimer, P; Aria, A I; Hofmann, S; Beere, H E; Ritchie, D A; Degl'Innocenti, R

2017-08-09

Active control of the amplitude and frequency of terahertz sources is an essential prerequisite for exploiting a myriad of terahertz applications in imaging, spectroscopy, and communications. Here we present a optoelectronic, external modulation technique applied to a terahertz quantum cascade laser which holds the promise of addressing a number of important challenges in this research area. A hybrid metamaterial/graphene device is implemented into an external cavity set-up allowing for optoelectronic tuning of feedback into a quantum cascade laser. We demonstrate powerful, all-electronic, control over the amplitude and frequency of the laser output. Full laser switching is performed by electrostatic gating of the metamaterial/graphene device, demonstrating a modulation depth of 100%. External control of the emission spectrum is also achieved, highlighting the flexibility of this feedback method. By taking advantage of the frequency dispersive reflectivity of the metamaterial array, different modes of the QCL output are selectively suppressed using lithographic tuning and single mode operation of the multi-mode laser is enforced. Side mode suppression is electrically modulated from ~6 dB to ~21 dB, demonstrating active, optoelectronic modulation of the laser frequency content between multi-mode and single mode operation.

Semiconductor optoelectronic infrared spectroscopy

International Nuclear Information System (INIS)

Hollingworth, A.R.

2001-08-01

We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

Thermal management in MoS{sub 2} based integrated device using near-field radiation

Energy Technology Data Exchange (ETDEWEB)

Peng, Jiebin [Department of Physics, National University of Singapore, Singapore 117546 (Singapore); Zhang, Gang, E-mail: zhangg@ihpc.a-star.edu.sg [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore); Li, Baowen [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States)

2015-09-28

Recently, wafer-scale growth of monolayer MoS{sub 2} films with spatial homogeneity is realized on SiO{sub 2} substrate. Together with the latest reported high mobility, MoS{sub 2} based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS{sub 2}, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS{sub 2} to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS{sub 2} and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS{sub 2} sheet. Therefore, an efficient thermal management strategy for MoS{sub 2} integrated device is proposed: Graphene sheet is brought into close proximity, 10–20 nm from MoS{sub 2} device; heat energy transfer from MoS{sub 2} to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.

An integrated semiconductor device enabling non-optical genome sequencing.

Science.gov (United States)

Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

2011-07-20

The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

Integrated Lateral Flow Device for Flow Control with Blood Separation and Biosensing

Directory of Open Access Journals (Sweden)

Veronica Betancur

2017-12-01

Full Text Available Lateral flow devices are versatile and serve a wide variety of purposes, including medical, agricultural, environmental, and military applications. Yet, the most promising opportunities of these devices for diagnosis might reside in point-of-care (POC applications. Disposable paper-based lateral flow strips have been of particular interest, because they utilize low-cost materials and do not require expensive fabrication instruments. However, there are constraints on tuning flow rates and immunoassays functionalization in papers, as well as technical challenges in sensors’ integration and concentration units for low-abundant molecular detection. In the present work, we demonstrated an integrated lateral flow device that applied the capillary forces with functionalized polymer-based microfluidics as a strategy to realize a portable, simplified, and self-powered lateral flow device (LFD. The polydimethylsiloxane (PDMS surface was rendered hydrophilic via functionalization with different concentrations of Pluronic F127. Controlled flow is a key variable for immunoassay-based applications for providing enough time for protein binding to antibodies. The flow rate of the integrated LFD was regulated by the combination of multiple factors, including Pluronic F127 functionalized surface properties and surface treatments of microchannels, resistance of the integrated flow resistor, the dimensions of the microstructures and the spacing between them in the capillary pump, the contact angles, and viscosity of the fluids. Various plasma flow rates were regulated and achieved in the whole device. The LFD combined the ability to separate high quality plasma from human whole blood by using a highly asymmetric plasma separation membrane, and created controlled and steady fluid flow using capillary forces produced by the interfacial tensions. Biomarker immunoglobulin G (IgG detection from plasma was demonstrated with a graphene nanoelectronic sensor integrated

Closed-loop model: An optimization of integrated thin-film magnetic devices

Energy Technology Data Exchange (ETDEWEB)

El-Ghazaly, Amal, E-mail: amale@stanford.edu [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Sato, Noriyuki [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); White, Robert M. [Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Wang, Shan X. [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States)

2017-06-15

Highlights: • An analytical model for inductance of thin-film magnetic devices was developed. • Different device topologies and magnetic permeabilities were addressed. • Inductance of various topologies were calculated and compared with simulation. • The model predicts simulated values with excellent accuracy. - Abstract: A generic analytical model has been developed to fully describe the flux closure through magnetic inductors. The model was applied to multiple device topologies including solenoidal single return path and dual return path inductors as well as spiral magnetic inductors for a variety of permeabilities and dimensions. The calculated inductance values from the analytical model were compared with simulated results for each of the analyzed device topologies and found to agree within 0.1 nH for the range of typical thin-film magnetic permeabilities (∼10{sup 2} to 10{sup 3}). Furthermore, the model can be used to evaluate behavior in other integrated or discrete magnetic devices with either non-isotropic or isotropic permeability and used to produce more efficient device designs in the future.

Optoelectronics in TESLA, LHC and pi-of-the-sky experiments

CERN Document Server

Romaniuk, Ryszard; Simrock, Stefan; Wrochna, Grzegorz

2004-01-01

Optical and optoelectronics technologies are more and more widely used in the biggest world experiments of high energy and nuclear physics, as well as in the astronomy. The paper is a kind of a broad digest describing the usage of optoelectronics is such experiments and information about some of the involved teams. The described experiments include: TESLA linear accelerator and FEL, Compact Muon Solenoid at LHC and recently started pi-of-the-sky global gamma ray bursts (with associated optical flashes) observation experiment. Optoelectronics and photonics offer several key features which are either extending the technical parameters of existing solutions or adding quite new practical application possibilities. Some of these favorable features of photonic systems are: high selectivity of optical sensors, immunity to some kinds of noise processes, extremely broad bandwidth exchangeable for either terabit rate transmission or ultrashort pulse generation, parallel image processing capability, etc. The following g...

Medical Device Integrated Vital Signs Monitoring Application with Real-Time Clinical Decision Support.

Science.gov (United States)

Moqeem, Aasia; Baig, Mirza; Gholamhosseini, Hamid; Mirza, Farhaan; Lindén, Maria

2018-01-01

This research involves the design and development of a novel Android smartphone application for real-time vital signs monitoring and decision support. The proposed application integrates market available, wireless and Bluetooth connected medical devices for collecting vital signs. The medical device data collected by the app includes heart rate, oxygen saturation and electrocardiograph (ECG). The collated data is streamed/displayed on the smartphone in real-time. This application was designed by adopting six screens approach (6S) mobile development framework and focused on user-centered approach and considered clinicians-as-a-user. The clinical engagement, consultations, feedback and usability of the application in the everyday practices were considered critical from the initial phase of the design and development. Furthermore, the proposed application is capable to deliver rich clinical decision support in real-time using the integrated medical device data.

The Marketing Plan: An Integrative Device for Teaching Marketing Management.

Science.gov (United States)

Berdine, W. R.; Petersen, James C.

1980-01-01

The importance of the marketing plan is stressed as an integrative device for teaching marketing management, and a structure is presented to assist students in designing a marketing plan. Components of this plan include marketing objectives, targeting market and buying motives, external environment and competition, product, price, and promotion.…

The MMI Device Ontology: Enabling Sensor Integration

Science.gov (United States)

Rueda, C.; Galbraith, N.; Morris, R. A.; Bermudez, L. E.; Graybeal, J.; Arko, R. A.; Mmi Device Ontology Working Group

2010-12-01

The Marine Metadata Interoperability (MMI) project has developed an ontology for devices to describe sensors and sensor networks. This ontology is implemented in the W3C Web Ontology Language (OWL) and provides an extensible conceptual model and controlled vocabularies for describing heterogeneous instrument types, with different data characteristics, and their attributes. It can help users populate metadata records for sensors; associate devices with their platforms, deployments, measurement capabilities and restrictions; aid in discovery of sensor data, both historic and real-time; and improve the interoperability of observational oceanographic data sets. We developed the MMI Device Ontology following a community-based approach. By building on and integrating other models and ontologies from related disciplines, we sought to facilitate semantic interoperability while avoiding duplication. Key concepts and insights from various communities, including the Open Geospatial Consortium (eg., SensorML and Observations and Measurements specifications), Semantic Web for Earth and Environmental Terminology (SWEET), and W3C Semantic Sensor Network Incubator Group, have significantly enriched the development of the ontology. Individuals ranging from instrument designers, science data producers and consumers to ontology specialists and other technologists contributed to the work. Applications of the MMI Device Ontology are underway for several community use cases. These include vessel-mounted multibeam mapping sonars for the Rolling Deck to Repository (R2R) program and description of diverse instruments on deepwater Ocean Reference Stations for the OceanSITES program. These trials involve creation of records completely describing instruments, either by individual instances or by manufacturer and model. Individual terms in the MMI Device Ontology can be referenced with their corresponding Uniform Resource Identifiers (URIs) in sensor-related metadata specifications (e

Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays.

Science.gov (United States)

Marín, A García; Núñez, C García; Rodríguez, P; Shen, G; Kim, S M; Kung, P; Piqueras, J; Pau, J L

2015-03-20

Although nanowires (NWs) may improve the performance of many optoelectronic devices such as light emitters and photodetectors, the mass commercialization of these devices is limited by the difficult task of finding reliable and reproducible methods to integrate the NWs on foreign substrates. This work shows the fabrication of zinc oxide NWs photodetectors on conventional glass using transparent conductive electrodes to effectively integrate the NWs at specific locations by dielectrophoresis (DEP). The paper describes the careful preparation of NW dispersions by sedimentation and the dielectrophoretic alignment of NWs in a home-made system. This system includes an impedance technique for the assessment of the alignment quality in real time. Following this procedure, ultraviolet photodetectors based on the electrical contacts formed by the DEP process on the transparent electrodes are fabricated. This cost-effective mean of contacting NWs enables front-and back-illumination operation modes, the latter eliminating shadowing effects caused by the deposition of metals. The electro-optical characterization of the devices shows uniform responsivities in the order of 106 A W(-1) below 390 nm under both modes, as well as, time responses of a few seconds.

New pathways in electronics and optoelectronics driven by new physics of nonconventional materials

International Nuclear Information System (INIS)

Kantser, Valeriu

2015-01-01

Nonconventional materials (NCM) - 2D materials and topological insulators (TI) - have opened a gateway to search new physical phenomena and states of the condensed matter as well as to pave new platform of modern technology. This stems on their unique attributes - non equivalence of electronic and dielectric states to vacuum ones, topological protection (reduced backscattering), spin momentum locking property, magnetoelectric coupling, generations of new quasiparticles like Majorana fermions. Increasing the surface state contribution in proportion to the bulk is critical to investigate the surface states and for future innovative device applications. The way to achieve this is to configure NCM into nanostructures, which at the same time in combination with others materials significantly enlarge the variety of new states and phenomena. This article reviews the recent progress made in NCM and nano heterostructures investigation. The state of art of different new scenario of engineering topologically interface states in the TI heterostructures are revealed, in particular by using polarization fields and antiferromagnetic ordering. Some of new proposals for innovative electronic and optoelectronic devices are discussed. (author)

Preparation, characterization and optoelectronic properties of nanodiamonds doped zinc oxide nanomaterials by a ball milling technique

Science.gov (United States)

Ullah, Hameed; Sohail, Muhammad; Malik, Uzma; Ali, Naveed; Bangash, Masroor Ahmad; Nawaz, Mohsan

2016-07-01

Zinc oxide (ZnO) is one of the very important metal oxides (MOs) for applications in optoelectronic devices which work in the blue and UV regions. However, to meet the challenges of obtaining ZnO nanomaterials suitable for practical applications, various modifications in physico-chemical properties are highly desirable. One of the ways adopted for altering the properties is to synthesize composite(s) of ZnO with various reinforcements. Here we report on the tuning of optoelectronic properties of ZnO upon doping by nanodiamonds (NDs) using the ball milling technique. A varying weight percent (wt.%) of NDs were ball milled for 2 h with ZnO nanoparticles prepared by a simple precipitation method. The effects of different parameters, the calcination temperature of ZnO, wt.% of NDs and mechanical milling upon the optoelectronic properties of the resulting ZnO-NDs nanocomposites have been investigated. The ZnO-NDs nanocomposites were characterized by IR spectroscopy, powder x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The UV-vis spectroscopy revealed the alteration in the bandgap energy (Eg ) of ZnO as a function of the calcination temperature of ZnO, changing the concentration of NDs, and mechanical milling of the resulting nanocomposites. The photoluminescence (PL) spectroscopy showed a decrease in the deep level emission (DLE) peaks and an increase in near-band-edge transition peaks as a result of the increasing concentration of NDs. The decrease in DLE and increase in band to band transition peaks were due to the strong interaction between the NDs and the Zn+; consequently, the Zn+ concentration decreased on the interstitial sites.

Integrated Microfibre Device for Refractive Index and Temperature Sensing

Directory of Open Access Journals (Sweden)

Sulaiman W. Harun

2012-08-01

Full Text Available A microfibre device integrating a microfibre knot resonator in a Sagnac loop reflector is proposed for refractive index and temperature sensing. The reflective configuration of this optical structure offers the advantages of simple fabrication and ease of sensing. To achieve a balance between responsiveness and robustness, the entire microfibre structure is embedded in low index Teflon, except for the 0.5–2 mm diameter microfibre knot resonator sensing region. The proposed sensor has exhibited a linear spectral response with temperature and refractive index. A small change in free spectral range is observed when the microfibre device experiences a large refractive index change in the surrounding medium. The change is found to be in agreement with calculated results based on dispersion relationships.

Thin-film luminescent concentrators for integrated devices: a cookbook.

Science.gov (United States)

Evenson, S A; Rawicz, A H

1995-11-01

A luminescent concentrator (LC) is a nonimaging optical device used for collecting light energy. As a result of its unique properties, a LC also offers the possibility of separating different portions of the spectrum and concentrating them at the same time. Hence, LC's can be applied to a whole range of problems requiring the collection, manipulation, and distribution or measurement of light. Further-more, as described in our previous research, thin-film LC elements can be deposited directly over sensor and processing electronics in the form of integrated LC devices. As an aid to further research, the materials and technology required to fabricate these thin-film LC elements through the use of an ultraviolet-curable photopolymer are documented in detail.

InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Sancho, J.C.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is

A design approach for integrating thermoelectric devices using topology optimization

International Nuclear Information System (INIS)

Soprani, S.; Haertel, J.H.K.; Lazarov, B.S.; Sigmund, O.; Engelbrecht, K.

2016-01-01

Highlights: • The integration of a thermoelectric (TE) cooler into a robotic tool is optimized. • Topology optimization is suggested as design tool for TE integrated systems. • A 3D optimization technique using temperature dependent TE properties is presented. • The sensitivity of the optimization process to the boundary conditions is studied. • A working prototype is constructed and compared to the model results. - Abstract: Efficient operation of thermoelectric devices strongly relies on the thermal integration into the energy conversion system in which they operate. Effective thermal integration reduces the temperature differences between the thermoelectric module and its thermal reservoirs, allowing the system to operate more efficiently. This work proposes and experimentally demonstrates a topology optimization approach as a design tool for efficient integration of thermoelectric modules into systems with specific design constraints. The approach allows thermal layout optimization of thermoelectric systems for different operating conditions and objective functions, such as temperature span, efficiency, and power recovery rate. As a specific application, the integration of a thermoelectric cooler into the electronics section of a downhole oil well intervention tool is investigated, with the objective of minimizing the temperature of the cooled electronics. Several challenges are addressed: ensuring effective heat transfer from the load, minimizing the thermal resistances within the integrated system, maximizing the thermal protection of the cooled zone, and enhancing the conduction of the rejected heat to the oil well. The design method incorporates temperature dependent properties of the thermoelectric device and other materials. The 3D topology optimization model developed in this work was used to design a thermoelectric system, complete with insulation and heat sink, that was produced and tested. Good agreement between experimental results and

Standard cell-based implementation of a digital optoelectronic neural-network hardware.

Science.gov (United States)

Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

2001-03-10

A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

A Printed Equilibrium Dialysis Device with Integrated Membranes for Improved Binding Affinity Measurements.

Science.gov (United States)

Pinger, Cody W; Heller, Andrew A; Spence, Dana M

2017-07-18

Equilibrium dialysis is a simple and effective technique used for investigating the binding of small molecules and ions to proteins. A three-dimensional (3D) printer was used to create a device capable of measuring binding constants between a protein and a small ion based on equilibrium dialysis. Specifically, the technology described here enables the user to customize an equilibrium dialysis device to fit their own experiments by choosing membranes of various material and molecular-weight cutoff values. The device has dimensions similar to that of a standard 96-well plate, thus being amenable to automated sample handlers and multichannel pipettes. The device consists of a printed base that hosts multiple windows containing a porous regenerated-cellulose membrane with a molecular-weight cutoff of ∼3500 Da. A key step in the fabrication process is a print-pause-print approach for integrating membranes directly into the windows subsequently inserted into the base. The integrated membranes display no leaking upon placement into the base. After characterizing the system's requirements for reaching equilibrium, the device was used to successfully measure an equilibrium dissociation constant for Zn 2+ and human serum albumin (K d = (5.62 ± 0.93) × 10 -7 M) under physiological conditions that is statistically equal to the constants reported in the literature.

Microfluidic device for continuous single cells analysis via Raman spectroscopy enhanced by integrated plasmonic nanodimers

KAUST Repository

Perozziello, Gerardo; Candeloro, Patrizio; De Grazia, Antonio; Esposito, Francesco; Allione, Marco; Coluccio, Maria Laura; Tallerico, Rossana; Valpapuram, Immanuel; Tirinato, Luca; Das, Gobind; Giugni, Andrea; Torre, Bruno; Veltri, Pierangelo; Kruhne, Ulrich; Della Valle, Giuseppe; Di Fabrizio, Enzo M.

2015-01-01

In this work a Raman flow cytometer is presented. It consists of a microfluidic device that takes advantages of the basic principles of Raman spectroscopy and flow cytometry. The microfluidic device integrates calibrated microfluidic channels- where

Engineering Strain for Improved III-Nitride Optoelectronic Device Performance

Science.gov (United States)

Van Den Broeck, Dennis Marnix

Due to growing environmental and economic concerns, renewable energy generation and high-efficiency lighting are becoming even more important in the scientific community. III-Nitride devices have been essential in production of high-brightness light-emitting diodes (LEDs) and are now entering the photovoltaic (PV) realm as the technology advances. InGaN/GaN multiple quantum well LEDs emitting in the blue/green region have emerged as promising candidates for next-generation lighting technologies. Due to the large lattice mismatch between InN and GaN, large electric fields exist within the quantum well layers and result in low rates of radiative recombination, especially for the green spectral region. This is commonly referred to as the "green gap" and results in poor external quantum efficiencies for light-emitting diodes and laser diodes. In order to mitigate the compressive stress of InGaN QWs, a novel growth technique is developed in order to grown thick, strain-relaxed In yGa1-yN templates for 0.08 structure, "semibulk" InGaN templates were achieved with vastly superior crystal and optical properties than bulk InGaN films. These semibulk InGaN templates were then utilized as new templates for multiple quantum well active layers, effectively reducing the compressive strain in the InGaN wells due to the larger lattice constant of the InGaN template with respect to a GaN template. A zero-stress balance method was used in order to realize a strain-balanced multiple quantum well structure, which again showed improved optical characteristics when compared to fully-strain active regions. The semibulk InGaN template was then implemented into "strain-compensated" LED structures, where light emission was achieved with very little leakage current. Discussion of these strain-compensated devices compared to conventional LEDs is detailed.

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

Science.gov (United States)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

KAUST Repository

Mumthaz Muhammed, Mufasila

2018-01-01

performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique

Use of integrity control and automatic start of reserve in a multi-channel temperature and flow rate control device

International Nuclear Information System (INIS)

Strzalkowski, L.

1975-01-01

A way to increase reliability of process quantity control is control of the integrity of the control plants themselves. The possibilities of integrity control on control devices having simply duplicated control channels or working on the basis of the ''two-from-three'' principle are valued. A highly reliable integrity control is possible by use of test signals. For an appropriate control device, structure and function of the assemblies are described. The integrity control device may be used in the water coolant temperature and flow rate control system for all technological channels of the research reactor ''Maria''

77 FR 25747 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of...

Science.gov (United States)

2012-05-01

... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-840] Certain Semiconductor Integrated Circuit... States after importation of certain semiconductor integrated circuit devices and products containing same... No. 6,847,904 (``the '904 patent''). The complaint further alleges that an industry in the United...

77 FR 60721 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Notice of...

Science.gov (United States)

2012-10-04

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-840] Certain Semiconductor Integrated... certain semiconductor integrated circuit devices and products containing same by reason of infringement of...,783; and 6,847,904. The complaint further alleges the existence of a domestic industry. The Commission...

Optoelectronic and nonlinear optical processes in low dimensional ...

Indian Academy of Sciences (India)

Optoelectronic process; nonlinear optical process; semiconductor. Quest for ever faster and intelligent information processing technologies has sparked ..... Schematic energy level diagram for the proposed 4-level model. States other than the.

Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers

Science.gov (United States)

Liang, Guozhen; Dupont, Emmanuel; Fathololoumi, Saeed; Wasilewski, Zbigniew R.; Ban, Dayan; Liang, Hou Kun; Zhang, Ying; Yu, Siu Fung; Li, Lianhe H.; Davies, Alexander Giles; Linfield, Edmund H.; Liu, Hui Chun; Wang, Qi Jie

2014-01-01

We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure. Furthermore, since all the structures are in-plane, this scheme provides a promising platform where well-established surface plasmon/metasurface techniques can be employed to engineer the emitted beam of THz QCLs controllably and flexibly. More importantly, an integrated active THz photonic circuit for sensing and communication applications could be constructed by incorporating other optoelectronic devices such as Schottky diode THz mixers, and graphene modulators and photodetectors. PMID:25403796

Monocrystalline halide perovskite nanostructures for optoelectronic applications

NARCIS (Netherlands)

Khoram, P.

2018-01-01

Halide perovskites are a promising class of materials for incorporation in optoelectronics with higher efficiency and lower cost. The solution processability of these materials provides unique opportunities for simple nanostructure fabrication. In the first half of the thesis (chapter 2 and 3) we

Optoelectronic properties of CC2TA towards a good TADF material

Science.gov (United States)

Mishra, Ashok Kumar

2018-05-01

2,4-bis{f3-(9H-carbazol-9-yl)-9H-carbazol-9-yl}-6-phenyl-1,3,5-triazine (CC2TA) is a triazine derivatives in which the acceptor phenyltriazine unit is used as the central skeleton and donor bicarbazole units are bonded to both ends of the skeleton. Molecular orbital calculations exhibit that the HOMO and LUMO are locally allocated chiefly in the bicarbazole and phenyltriazine units, respectively. There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) CC2TA is one of these reported noble metal-free TADF molecules which offers unique opto electronic properties arising from the reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the CC2TA compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the CC2TA organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

Science.gov (United States)

Gogurla, Narendar; Kundu, Subhas C.; Ray, Samit K.

2017-04-01

Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼105 as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.

A Novel Pseudo-PMOS Integrated ISFET Device for Water Quality Monitoring

Directory of Open Access Journals (Sweden)

Pawan Whig

2013-01-01

Full Text Available The paper presents a performance analysis of novel CMOS Integrated pseudo-PMOS ISFET (PP-ISFET having zero static power dissipation. The main focus is on simulation of power and performance analysis along with the comparison with existing devices, which is used for water quality monitoring. The conventional devices, generally used, consume high power and are not stable for long term monitoring. The conventional device has the drawbacks of low value of slew rate, high power consumption, and nonlinear characteristics, but in this novel design, due to zero static power, less load capacitance on input signals, faster switching, fewer transistors, and higher circuit density, the device exhibits a better slew rate and piecewise linear characteristics and is seen consuming low power of the order of 30 mW. The proposed circuit reduces total power consumption per cycle, increases the speed of operation, is fairly linear, and is simple to implement.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Science.gov (United States)

Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

2017-03-01

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

Optoelectronic properties of higher acenes, their BN analogue and substituted derivatives

International Nuclear Information System (INIS)

Armaković, Stevan; Armaković, Sanja J.; Holodkov, Vladimir; Pelemiš, Svetlana

2016-01-01

We have investigated optoelectronic properties of higher acenes: pentacene, hexacene, heptacene, octacene, nonacene, decacene and their boron-nitride (BN) analogues, within the framework of density functional theory (DFT). We have also investigated the optoelectronic properties of acenes modified by BN substitution. Calculated optoelectronic properties encompasses: oxidation and reduction potentials, electron and hole reorganization energies and energy difference between excited first singlet and triplet states ΔE(S_1−T_1). Oxidation and reduction potentials indicate significantly better stability of BN analogues, comparing with their all-carbon relatives. Although higher acenes possess lower electron and hole reorganization energies, with both best values much lower than 0.1 eV, their BN analogues also have competitive values of reorganization energies, especially for holes for which reorganization energy is also lower than 0.1 eV. On the other hand ΔE(S_1−T_1) is much better for BN analogues, having values that indicate that BN analogues are possible applicable for thermally activated delayed fluorescence. - Highlights: • Optoelectronic properties of structures based on higher acenes have been investigated. • Oxidation and reduction potentials together with reorganization energies are calculated. • TADF is analyzed through calculation of ΔE(S_1−T_1), which is much better for BN analogues. • Reorganization energies of acenes improve with the increase of number of benzene rings.

An integrated fiber and stone basket device for use in Thulium fiber laser lithotripsy

Science.gov (United States)

Wilson, Christopher R.; Hutchens, Thomas C.; Hardy, Luke A.; Irby, Pierce B.; Fried, Nathaniel M.

2014-03-01

The Thulium fiber laser (TFL) is being explored as an alternative laser lithotripter to the Holmium:YAG laser. The TFL's superior near-single mode beam profile enables higher power transmission through smaller fibers with reduced proximal fiber tip damage. Recent studies have also reported that attaching hollow steel tubing to the distal fiber tip decreases fiber degradation and burn-back without compromising stone ablation rates. However, significant stone retropulsion was observed, which increased with pulse rate. In this study, the hollow steel tip fiber design was integrated with a stone basket to minimize stone retropulsion during ablation. A device was constructed consisting of a 100-μm-core, 140-μm-OD silica fiber outfitted with 5-mm-long stainless steel tubing at the distal tip, and integrated with a 1.3-Fr (0.433-mm-OD) disposable nitinol wire basket, to form an overall 1.9-Fr (0.633-mm- OD) integrated device. This compact design may provide several potential advantages including increased flexibility, higher saline irrigation rates through the ureteroscope working channel, and reduced fiber tip degradation compared to separate fiber and stone basket manipulation. TFL pulse energy of 31.5 mJ with 500 μs pulse duration and pulse rate of 500 Hz was delivered through the integrated fiber/basket device in contact with human uric acid stones, ex vivo. TFL stone ablation rates measured 1.5 +/- 0.2 mg/s, comparable to 1.7 +/- 0.3 mg/s (P > 0.05) using standard bare fiber tips separately with a stone basket. With further development, this device may be useful for minimizing stone retropulsion, thus enabling more efficient TFL lithotripsy at higher pulse rates.

Microfluidic device for continuous single cells analysis via Raman spectroscopy enhanced by integrated plasmonic nanodimers

DEFF Research Database (Denmark)

Perozziello, Gerardo; Candeloro, Patrizio; De Grazia, Antonio

2016-01-01

In this work a Raman flow cytometer is presented. It consists of a microfluidic device that takes advantages of the basic principles of Raman spectroscopy and flow cytometry. The microfluidic device integrates calibrated microfluidic channels-where the cells can flow one-by-one -, allowing single...... cell Raman analysis. The microfluidic channel integrates plasmonic nanodimers in a fluidic trapping region. In this way it is possible to perform Enhanced Raman Spectroscopy on single cell. These allow a label-free analysis, providing information about the biochemical content of membrane and cytoplasm...

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

Science.gov (United States)

Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

2011-07-04

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

Microstructure of III-N semiconductors related to their applications in optoelectronics

Science.gov (United States)

Leszczynski, M.; Czernetzki, R.; Sarzynski, M.; Krysko, M.; Targowski, G.; Prystawko, P.; Bockowski, M.; Grzegory, I.; Suski, T.; Domagala, J.; Porowski, S.

2005-03-01

There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III-N semiconductors in relation with their microstructure. The following devices are presented: i) Low-power green and blue LEDs, ii) High-power LEDs targeting solid-state white lighting, iii) Low-power violet LDs for high definition DVD market, iv) High-power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III-N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds.

Physical removal of metallic carbon nanotubes from nanotube network devices using a thermal and fluidic process

International Nuclear Information System (INIS)

Ford, Alexandra C; Shaughnessy, Michael; Wong, Bryan M; Kane, Alexander A; Krafcik, Karen L; Léonard, François; Kuznetsov, Oleksandr V; Billups, W Edward; Hauge, Robert H

2013-01-01

Electronic and optoelectronic devices based on thin films of carbon nanotubes are currently limited by the presence of metallic nanotubes. Here we present a novel approach based on nanotube alkyl functionalization to physically remove the metallic nanotubes from such network devices. The process relies on preferential thermal desorption of the alkyls from the semiconducting nanotubes and the subsequent dissolution and selective removal of the metallic nanotubes in chloroform. The approach is versatile and is applied to devices post-fabrication. (paper)

Optoelectronic properties of XIn2S4 (X = Cd, Mg) thiospinels through highly accurate all-electron FP-LAPW method coupled with modified approximations

International Nuclear Information System (INIS)

Yousaf, Masood; Dalhatu, S.A.; Murtaza, G.; Khenata, R.; Sajjad, M.; Musa, A.; Rahnamaye Aliabad, H.A.; Saeed, M.A.

2015-01-01

Highlights: • Highly accurate all-electron FP-LAPW+lo method is used. • New physical parameters are reported, important for the fabrication of optoelectronic devices. • A comparative study that involves FP-LAPW+lo method and modified approximations. • Computed band gap values have good agreement with the experimental values. • Optoelectronic results of fundamental importance can be utilized for the fabrication of devices. - Abstract: We report the structural, electronic and optical properties of the thiospinels XIn 2 S 4 (X = Cd, Mg), using highly accurate all-electron full potential linearized augmented plane wave plus local orbital method. In order to calculate the exchange and correlation energies, the method is coupled with modified techniques such as GGA+U and mBJ-GGA, which yield improved results as compared to the previous studies. GGA+SOC approximation is also used for the first time on these compounds to examine the spin orbit coupling effect on the band structure. From the analysis of the structural parameters, robust character is predicted for both materials. Energy band structures profiles are fairly the same for GGA, GGA+SOC, GGA+U and mBJ-GGA, confirming the indirect and direct band gap nature of CdIn 2 S 4 and MgIn 2 S 4 materials, respectively. We report the trend of band gap results as: (mBJ-GGA) > (GGA+U) > (GGA) > (GGA+SOC). Localized regions appearing in the valence bands for CdIn 2 S 4 tend to split up nearly by ≈1 eV in the case of GGA+SOC. Many new physical parameters are reported that can be important for the fabrication of optoelectronic devices. Optical spectra namely, dielectric function (DF), refractive index n(ω), extinction coefficient k(ω), reflectivity R(ω), optical conductivity σ(ω), absorption coefficient α(ω) and electron loss function are discussed. Optical’s absorption edge is noted to be 1.401 and 1.782 for CdIn 2 S 4 and MgIn 2 S 4 , respectively. The prominent peaks in the electron energy spectrum

Simultaneous optical and electrical modeling of plasmonic light trapping in thin-film amorphous silicon photovoltaic devices

Science.gov (United States)

Gandhi, Keyur K.; Nejim, Ahmed; Beliatis, Michail J.; Mills, Christopher A.; Henley, Simon J.; Silva, S. Ravi P.

2015-01-01

Rapid prototyping of photovoltaic (PV) cells requires a method for the simultaneous simulation of the optical and electrical characteristics of the device. The development of nanomaterial-enabled PV cells only increases the complexity of such simulations. Here, we use a commercial technology computer aided design (TCAD) software, Silvaco Atlas, to design and model plasmonic gold nanoparticles integrated in optoelectronic device models of thin-film amorphous silicon (a-Si:H) PV cells. Upon illumination with incident light, we simulate the optical and electrical properties of the cell simultaneously and use the simulation to produce current-voltage (J-V) and external quantum efficiency plots. Light trapping due to light scattering and localized surface plasmon resonance interactions by the nanoparticles has resulted in the enhancement of both the optical and electrical properties due to the reduction in the recombination rates in the photoactive layer. We show that the device performance of the modeled plasmonic a-Si:H PV cells depends significantly on the position and size of the gold nanoparticles, which leads to improvements either in optical properties only, or in both optical and electrical properties. The model provides a route to optimize the device architecture by simultaneously optimizing the optical and electrical characteristics, which leads to a detailed understanding of plasmonic PV cells from a design perspective and offers an advanced tool for rapid device prototyping.

Integrating the results of user research into medical device development: insights from a case study.

Science.gov (United States)

Martin, Jennifer L; Barnett, Julie

2012-07-19

It is well established that considering users is an important aspect of medical device development. However it is also well established that there are numerous barriers to successfully conducting user research and integrating the results into product development. It is not sufficient to simply conduct user research, it must also be effectively integrated into product development. A case study of the development of a new medical imaging device was conducted to examine in detail how users were involved in a medical device development project. Two user research studies were conducted: a requirements elicitation interview study and an early prototype evaluation using contextual inquiry. A descriptive in situ approach was taken to investigate how these studies contributed to the product development process and how the results of this work influenced the development of the technology. Data was collected qualitatively through interviews with the development team, participant observation at development meetings and document analysis. The focus was on investigating the barriers that exist to prevent user data from being integrated into product development. A number of individual, organisational and system barriers were identified that functioned to prevent the results of the user research being fully integrated into development. The user and technological aspects of development were seen as separate work streams during development. The expectations of the developers were that user research would collect requirements for the appearance of the device, rather than challenge its fundamental concept. The manner that the user data was communicated to the development team was not effective in conveying the significance or breadth of the findings. There are a range of informal and formal organisational processes that can affect the uptake of user data during medical device development. Adopting formal decision making processes may assist manufacturers to take a more integrated and

Integrating the results of user research into medical device development: insights from a case study

Directory of Open Access Journals (Sweden)

Martin Jennifer L

2012-07-01

Full Text Available Abstract Background It is well established that considering users is an important aspect of medical device development. However it is also well established that there are numerous barriers to successfully conducting user research and integrating the results into product development. It is not sufficient to simply conduct user research, it must also be effectively integrated into product development. Methods A case study of the development of a new medical imaging device was conducted to examine in detail how users were involved in a medical device development project. Two user research studies were conducted: a requirements elicitation interview study and an early prototype evaluation using contextual inquiry. A descriptive in situ approach was taken to investigate how these studies contributed to the product development process and how the results of this work influenced the development of the technology. Data was collected qualitatively through interviews with the development team, participant observation at development meetings and document analysis. The focus was on investigating the barriers that exist to prevent user data from being integrated into product development. Results A number of individual, organisational and system barriers were identified that functioned to prevent the results of the user research being fully integrated into development. The user and technological aspects of development were seen as separate work streams during development. The expectations of the developers were that user research would collect requirements for the appearance of the device, rather than challenge its fundamental concept. The manner that the user data was communicated to the development team was not effective in conveying the significance or breadth of the findings. Conclusion There are a range of informal and formal organisational processes that can affect the uptake of user data during medical device development. Adopting formal decision

Curriculum design and German student exchange for Sino-German Bachelor program majored in optoelectronics engineering

Science.gov (United States)

Zheng, Jihong; Fuhrmann, Thomas; Xu, Boqing; Schreiner, Rupert; Jia, Hongzhi; Zhang, Wei; Wang, Ning; Seebauer, Gudrun; Zhu, Jiyan

2017-08-01

Different higher education backgrounds in China and Germany led to challenges in the curriculum design at the beginning of our cooperative bachelor program in Optoelectronics Engineering. We see challenges in different subject requirements from both sides and in the German language requirements for Chinese students. The curriculum was optimized according to the ASIIN criteria, which makes it acceptable and understandable by both countries. German students are integrated into the Chinese class and get the same lectures like their Chinese colleagues. Intercultural and curriculum challenges are successfully solved. The results are summarized to provide an example for other similar international programs.

Dynamic kirigami structures for integrated solar tracking

Science.gov (United States)

Lamoureux, Aaron; Lee, Kyusang; Shlian, Matthew; Forrest, Stephen R.; Shtein, Max

2015-01-01

Optical tracking is often combined with conventional flat panel solar cells to maximize electrical power generation over the course of a day. However, conventional trackers are complex and often require costly and cumbersome structural components to support system weight. Here we use kirigami (the art of paper cutting) to realize novel solar cells where tracking is integral to the structure at the substrate level. Specifically, an elegant cut pattern is made in thin-film gallium arsenide solar cells, which are then stretched to produce an array of tilted surface elements which can be controlled to within ±1°. We analyze the combined optical and mechanical properties of the tracking system, and demonstrate a mechanically robust system with optical tracking efficiencies matching conventional trackers. This design suggests a pathway towards enabling new applications for solar tracking, as well as inspiring a broader range of optoelectronic and mechanical devices. PMID:26348820