WorldWideScience

Sample records for insulating thin films-1996

  1. Optical conductivity of topological insulator thin films

    International Nuclear Information System (INIS)

    Li, L. L.; Xu, W.; Peeters, F. M.

    2015-01-01

    We present a detailed theoretical study on the optoelectronic properties of topological insulator thin film (TITFs). The k·p approach is employed to calculate the energy spectra and wave functions for both the bulk and surface states in the TITF. With these obtained results, the optical conductivities induced by different electronic transitions among the bulk and surface states are evaluated using the energy-balance equation derived from the Boltzmann equation. We find that for Bi 2 Se 3 -based TITFs, three characteristic regimes for the optical absorption can be observed. (i) In the low radiation frequency regime (photon energy ℏω<200 meV), the free-carrier absorption takes place due to intraband electronic transitions. An optical absorption window can be observed. (ii) In the intermediate radiation frequency regime (200<ℏω<300 meV), the optical absorption is induced mainly by interband electronic transitions from surface states in the valance band to surface states in the conduction band and an universal value σ 0 =e 2 /(8ℏ) for the optical conductivity can be obtained. (iii) In the high radiation frequency regime (ℏω>300 meV), the optical absorption can be achieved via interband electronic transitions from bulk and surface states in the valance band to bulk and surface states in the conduction band. A strong absorption peak can be observed. These interesting findings indicate that optical measurements can be applied to identify the energy regimes of bulk and surface states in the TITF

  2. Specular Andreev reflection in thin films of topological insulators

    Science.gov (United States)

    Majidi, Leyla; Asgari, Reza

    2016-05-01

    We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.

  3. Fluxons in thin-film superconductor-insulator superlattices

    DEFF Research Database (Denmark)

    Sakai, S.; Bodin, P.; Pedersen, Niels Falsig

    1993-01-01

    In a system of thin alternating layers of superconductors and insulators the equations describing static and dynamic fluxon solutions are derived. The approach, represented by a useful compact matrix form, is intended to describe systems fabricated for example of niobium or niobium-nitride thin...... films; in the limit of ultrathin superconductor films it may give a model for describing fluxon motion in layered high-Tc superconductors. Numerical examples of current versus voltage curves to be expected in such an experiment are presented. Journal of Applied Physics is copyrighted by The American...

  4. Thin Aerogel as a Spacer in Multilayer Insulation

    Science.gov (United States)

    Moroz, Nancy

    2015-01-01

    Cryogenic fluid management is a critical technical area that is needed for future space exploration. A key challenge is the storability of liquid hydrogen (LH2), liquid methane (LCH4), and liquid oxygen (LOX) propellants for long-duration missions. The storage tanks must be well-insulated to prevent over-pressurization and venting, which can lead to unacceptable propellant losses for long-duration missions to Mars and beyond. Aspen Aerogels had validated the key process step to enable the fabrication of thin, low-density aerogel materials. The multilayer aerogel insulation (MLAI) system prototypes were prepared using sheets of aerogel materials with superior thermal performance exceeding current state-of-the-art insulation for space applications. The exceptional properties of this system include a new breakthrough in high-vacuum cryogenic thermal insulation, providing a durable material with excellent thermal performance at a reduced cost when compared to longstanding state-of-the-art multilayer insulation systems. During the Phase II project, further refinement and qualification/system-level testing of the MLAI system will be performed for use in cryogenic storage applications. Aspen has been in discussions with United Launch Alliance, LLC; NASA's Kennedy Space Center; and Yetispace, Inc., to test the MLAI system on rea-lworld tanks such as Vibro-Acoustic Test Article (VATA) or the Cryogenic Orbital Testbed (CRYOTE).

  5. Study of thin insulating films using secondary ion emission

    International Nuclear Information System (INIS)

    Hilleret, Noel

    1973-01-01

    Secondary ion emission from insulating films was investigated using a CASTAING-SLODZIAN ion analyzer. Various different aspects of the problem were studied: charge flow across a silica film; the mobilization of sodium during ion bombardment; consequences of the introduction of oxygen on the emission of secondary ions from some solids; determination of the various characteristics of secondary ion emission from silica, silicon nitride and silicon. An example of measurements made using this type of operation is presented: profiles (concentration as a function of depth) of boron introduced by diffusion or implantation in thin films of silica on silicon or silicon nitride. Such measurements have applications in microelectronics. The same method of operation was extended to other types of insulating film, and in particular, to the metallurgical study of passivation films formed on the surface of stainless steels. (author) [fr

  6. Absorption of surface acoustic waves by topological insulator thin films

    International Nuclear Information System (INIS)

    Li, L. L.; Xu, W.

    2014-01-01

    We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies

  7. Topological phases of topological-insulator thin films

    Science.gov (United States)

    Asmar, Mahmoud M.; Sheehy, Daniel E.; Vekhter, Ilya

    2018-02-01

    We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix element oscillates as a function of both the film thickness and the momentum in the plane of the film for Bi2Se3 and Bi2Te3 . As a result, while the magnitude of the matrix element at the center of the surface Brillouin zone gives the gap in the energy spectrum, the sign of the matrix element uniquely determines the topological properties of the film, as demonstrated by explicitly computing the pseudospin textures and the Chern number. We find a sequence of transitions between topological and nontopological phases, separated by semimetallic states, as the film thickness varies. In the topological phase, the edge states of the film always exist but only carry a spin current if the edge potentials break particle-hole symmetry. The edge states decay very slowly away from the boundary in Bi2Se3 , making Bi2Te3 , where this scale is shorter, a more promising candidate for the observation of these states. Our results hold for free-standing films as well as heterostructures with large-gap insulators.

  8. Economic Analysis of Installing Fixed and Removable Insulation for Pipe Wall Thinning Management

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Kyeongmo; Yun, Hun [KEPCO E and C, Gimcheon (Korea, Republic of)

    2016-12-15

    To perform ultrasonic testing (UT) thickness measurement of the secondary side piping installed in nuclear power plants, the insulation for preventing heat loss should be removed. The type of insulation can be divided into fixed and removable insulation. Fixed and removable insulation have their own strengths and weaknesses. Removable insulation has been installed in the components susceptible to wall thinning caused by FAC and erosion from Shin-Kori unit 1, which commenced its commercial operation in 2011. In this paper, the number of repeated inspections of components and the number of replacements of fixed insulation were estimated and a more economical way was identified based on the manufacturing and installation costs for fixed and removable insulation.

  9. Giant magneto-optical Kerr effect and universal Faraday effect in thin-film topological insulators.

    Science.gov (United States)

    Tse, Wang-Kong; MacDonald, A H

    2010-07-30

    Topological insulators can exhibit strong magneto-electric effects when their time-reversal symmetry is broken. In this Letter we consider the magneto-optical Kerr and Faraday effects of a topological insulator thin film weakly exchange coupled to a ferromagnet. We find that its Faraday rotation has a universal value at low frequencies θF=tan(-1)α, where α is the vacuum fine structure constant, and that it has a giant Kerr rotation θK=π/2. These properties follow from a delicate interplay between thin-film cavity confinement and the surface Hall conductivity of a topological insulator's helical quasiparticles.

  10. Ultra-thin smart acoustic metasurface for low-frequency sound insulation

    Science.gov (United States)

    Zhang, Hao; Xiao, Yong; Wen, Jihong; Yu, Dianlong; Wen, Xisen

    2016-04-01

    Insulating low-frequency sound is a conventional challenge due to the high areal mass required by mass law. In this letter, we propose a smart acoustic metasurface consisting of an ultra-thin aluminum foil bonded with piezoelectric resonators. Numerical and experimental results show that the metasurface can break the conventional mass law of sound insulation by 30 dB in the low frequency regime (sound insulation performance is attributed to the infinite effective dynamic mass density produced by the smart resonators. It is also demonstrated that the excellent sound insulation property can be conveniently tuned by simply adjusting the external circuits instead of modifying the structure of the metasurface.

  11. Phase coexistence in the metal-insulator transition of a VO2 thin film

    International Nuclear Information System (INIS)

    Chang, Y.J.; Koo, C.H.; Yang, J.S.; Kim, Y.S.; Kim, D.H.; Lee, J.S.; Noh, T.W.; Kim, Hyun-Tak; Chae, B.G.

    2005-01-01

    Vanadium dioxide (VO 2 ) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO 2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO 2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO 2 occurs through metal and insulator phase coexistence

  12. Detection of wall thinning of carbon steel pipe covered with insulation using Pulsed Eddy Current technique

    International Nuclear Information System (INIS)

    Park, Duckgun; Kishore, M. B.; Lee, D. H.

    2013-01-01

    The test sample is a ferromagnetic carbon steel pipe having different thickness, covered with a 10 cm plastic insulation laminated by 0.4 mm Al plate to simulate the pipelines in NPPs. The PEC Probe used for the wall thinning detection consists of an excitation coil and a Hall sensor. The excitation coils in the probe is driven by a rectangular bipolar current pulse and the Hall-sensor will detects the resultant field. The Hall sensor output is considered as PEC signal. Results shows that the PEC system can detect wall thinning in an insulated pipeline of the NPPs. Local wall thinning in pipelines affects the structural integrity of industries like nuclear power plants (NPPs). In the present study a pulsed eddy current (PEC) technology to detect the wall thing of carbon steel pipe covered with insulation is developed

  13. Quantum and classical contributions to linear magnetoresistance in topological insulator thin films

    International Nuclear Information System (INIS)

    Singh, Sourabh; Gopal, R. K.; Sarkar, Jit; Mitra, Chiranjib

    2016-01-01

    Three dimensional topological insulators possess backscattering immune relativistic Dirac fermions on their surface due to nontrivial topology of the bulk band structure. Both metallic and bulk insulating topological insulators exhibit weak-antilocalization in the low magnetic field and linear like magnetoresistance in higher fields. We explore the linear magnetoresistance in bulk insulating topological insulator Bi 2-x Sb x Te 3-y Se y thin films grown by pulsed laser deposition technique. Thin films of Bi 2-x Sb x Te 3-y Se y were found to be insulating in nature, which conclusively establishes the origin of linear magnetoresistance from surface Dirac states. The films were thoroughly characterized for their crystallinity and composition and then subjected to transport measurements. We present a careful analysis taking into considerations all the existing models of linear magnetoresistance. We comprehend that the competition between classical and quantum contributions to magnetoresistance results in linear magnetoresistance in high fields. We observe that the cross-over field decreases with increasing temperature and the physical argument for this behavior is explained.

  14. Edge states and integer quantum Hall effect in topological insulator thin films.

    Science.gov (United States)

    Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing

    2015-08-25

    The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.

  15. Linear magnetoresistance and surface to bulk coupling in topological insulator thin films.

    Science.gov (United States)

    Singh, Sourabh; Gopal, R K; Sarkar, Jit; Pandey, Atul; Patel, Bhavesh G; Mitra, Chiranjib

    2017-12-20

    We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi 2 Se 2 Te and BiSbTeSe 1.6 were grown using the pulsed laser deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the cross-over field, where LMR sets in, decreases with increasing temperature. We propose that this cross-over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

  16. Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shilpam; Amaladass, E.P. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Sharma, Neha [Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Harimohan, V. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amirthapandian, S. [Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Mani, Awadhesh, E-mail: mani@igcar.gov.in [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2017-06-01

    Disorder driven superconductor to insulator transition via intermediate metallic regime is reported in nano-crystalline thin films of molybdenum. The nano-structured thin films have been deposited at room temperature using DC magnetron sputtering at different argon pressures. The grain size has been tuned using deposition pressure as the sole control parameter. A variation of particle sizes, room temperature resistivity and superconducting transition has been studied as a function of deposition pressure. The nano-crystalline molybdenum thin films are found to have large carrier concentration but very low mobility and electronic mean free path. Hall and conductivity measurements have been used to understand the effect of disorder on the carrier density and mobilities. Ioffe-Regel parameter is shown to correlate with the continuous metal-insulator transition in our samples. - Highlights: • Thin films of molybdenum using DC sputtering have been deposited on glass. • Argon background pressure during sputtering was used to tune the crystallite sizes of films. • Correlation in deposition pressure, disorder and particle sizes has been observed. • Disorder tuned superconductor to insulator transition along with an intermediate metallic phase has been observed. • Enhancement of superconducting transition temperature and a dome shaped T{sub C} vs. deposition pressure phase diagram has been observed.

  17. Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strain

    Science.gov (United States)

    Demidov, E. V.; Grabov, V. M.; Komarov, V. A.; Kablukova, N. S.; Krushel'nitskii, A. N.

    2018-03-01

    The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.

  18. Metal-insulator transition induced in CaVO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  19. Metal-insulator transition induced in CaVO3 thin films

    International Nuclear Information System (INIS)

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-01-01

    Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

  20. Magnetic-field induced semimetal in topological crystalline insulator thin films

    International Nuclear Information System (INIS)

    Ezawa, Motohiko

    2015-01-01

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material

  1. Magnetic-field induced semimetal in topological crystalline insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ezawa, Motohiko, E-mail: ezawa@ap.t.u-tokyo.ac.jp

    2015-06-19

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material.

  2. MIS field effect transistor with barium titanate thin film as a gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Firek, P., E-mail: pfirek@elka.pw.edu.p [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Werbowy, A.; Szmidt, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2009-11-25

    The properties of barium titanate (BaTiO{sub 3}, BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO{sub 3} (containing La{sub 2}O{sub 3} admixture) thin films in a role of gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO{sub 3} + La{sub 2}O{sub 3} (2 wt.%) target. In the paper transfer and output current-voltage (I-V), transconductance and output conductance characteristics of obtained transistors are presented and discussed. Basic parameters of these devices like, e.g. threshold voltage (V{sub TH}), are determined and discussed.

  3. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    Science.gov (United States)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  4. Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

    Science.gov (United States)

    Kou, Liangzhi; Fu, Huixia; Ma, Yandong; Yan, Binghai; Liao, Ting; Du, Aijun; Chen, Changfeng

    2018-02-01

    We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). We showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by C H2OH , which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.

  5. Measurement of the thermal conductivity of thin insulating anisotropic material with a stationary hot strip method

    International Nuclear Information System (INIS)

    Jannot, Yves; Degiovanni, Alain; Félix, Vincent; Bal, Harouna

    2011-01-01

    This paper presents a method dedicated to the thermal conductivity measurement of thin insulating anisotropic materials. The method is based on three hot-strip-type experiments in which the stationary temperature is measured at the center of the hot strip. A 3D model of the heat transfer in the system is established and simulated to determine the validity of a 2D transfer hypothesis at the center of the hot strip. A simplified 2D model is then developed leading to the definition of a geometrical factor calculable from a polynomial expression. A very simple calculation method enabling the estimation of the directional thermal conductivities from the three stationary temperature measurements and from the geometrical factor is presented. The uncertainties on each conductivity are estimated. The method is then validated by measurements on polyethylene foam and Ayous (anistropic low-density tropical wood); the estimated values of the thermal conductivities are in good agreement with the values estimated using the hot plate and the flash method. The method is finally applied on a thin super-insulating fibrous material for which no other method is able to measure the in-plane conductivity

  6. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    Science.gov (United States)

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  7. Giant spin Hall angle from topological insulator BixSe(1 - x) thin films

    Science.gov (United States)

    Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping

    Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.

  8. Electric-field induced spin accumulation in the Landau level states of topological insulator thin films

    Science.gov (United States)

    Siu, Zhuo Bin; Chowdhury, Debashree; Basu, Banasri; Jalil, Mansoor B. A.

    2017-08-01

    A topological insulator (TI) thin film differs from the more typically studied thick TI system in that the former has both a top and a bottom surface where the states localized at both surfaces can couple to one other across the finite thickness. An out-of-plane magnetic field leads to the formation of discrete Landau level states in the system, whereas an in-plane magnetization breaks the angular momentum symmetry of the system. In this work, we study the spin accumulation induced by the application of an in-plane electric field to the TI thin film system where the Landau level states and inter-surface coupling are simultaneously present. We show, via Kubo formula calculations, that the in-plane spin accumulation perpendicular to the magnetization due to the electric field vanishes for a TI thin film with symmetric top and bottom surfaces. A finite in-plane spin accumulation perpendicular to both the electric field and magnetization emerges upon applying either a differential magnetization coupling or a potential difference between the two film surfaces. This spin accumulation results from the breaking of the antisymmetry of the spin accumulation around the k-space equal-energy contours.

  9. Density functional study of BiSbTeSe{sub 2} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadpourrad, Zahra; Abolhassani, Mohammadreza [Department of Physics, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2017-08-15

    In this work, using density functional theory calculations, we have investigated the band topology of bulk BiSbTeSe{sub 2} and its thin film electronic properties in several thicknesses. It is one member of the quaternary compounds Bi{sub 2-x}Sb{sub x}Te{sub 3-y}Se{sub y} (BSTS) with the best intrinsic bulk insulating behavior. Based on our calculations we have found that a band inversion at Γ-point is induced when spin-orbit coupling is turned on, with an energy gap of about 0.318 eV. The film thickness has an effect on the surface states such that a gap opens at Dirac point in 6 quintuple-layers film and with decrease in thickness, the magnitude of the gap increases. The atomic contributions have been mapped out for the first few layers of thin films to demonstrate the surface states. The relative charge density has been calculated layer-wise and the penetration depth of the surface states into the bulk region is found to be about 2.5-3.5 quintuple layers, depending on the termination species of thin films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

    International Nuclear Information System (INIS)

    Chen Peng; An Zhenghua; Zhu Ming; Fu, Ricky K.Y.; Chu, Paul K.; Montgomery, Neil; Biswas, Sukanta

    2004-01-01

    The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10 14 cm -2 ) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure

  11. Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films

    International Nuclear Information System (INIS)

    Li Long-Long; Xu Wen

    2015-01-01

    We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi 2 Se 3 at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi 2 Se 3 -based TITFs as high-performance TE materials and devices. (paper)

  12. Spin Seebeck effect in insulating epitaxial γ−Fe2O3 thin films

    Directory of Open Access Journals (Sweden)

    P. Jiménez-Cavero

    2017-02-01

    Full Text Available We report the fabrication of high crystal quality epitaxial thin films of maghemite (γ−Fe2O3, a classic ferrimagnetic insulating iron oxide. Spin Seebeck effect (SSE measurements in γ−Fe2O3/Pt bilayers as a function of sample preparation conditions and temperature yield a SSE coefficient of 0.5(1 μV/K at room temperature. Dependence on temperature allows us to estimate the magnon diffusion length in maghemite to be in the range of tens of nanometers, in good agreement with that of conducting iron oxide magnetite (Fe3O4, establishing the relevance of spin currents of magnonic origin in magnetic iron oxides.

  13. Quantum coherent transport in SnTe topological crystalline insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Assaf, B. A.; Heiman, D. [Department of Physics, Northeastern University, Boston, Massachusetts 02115 (United States); Katmis, F.; Moodera, J. S. [Francis Bitter Magnet Laboratory, MIT, Cambridge, Massachusetts 02139 (United States); Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Wei, P. [Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Satpati, B. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Zhang, Z. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Bennett, S. P.; Harris, V. G. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-09-08

    Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound; the present work on high-quality thin films provides a route for increasing the mobility and reducing the carrier density of SnTe without chemical doping. Results of quantum coherent magnetotransport measurements reveal a multiplicity of Dirac surface states that are unique to TCI. Modeling of the weak antilocalization shows variations in the extracted number of carrier valleys that reflect the role of coherent intervalley scattering in coupling different Dirac states on the degenerate TCI surface.

  14. Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Guang-hao; Bai, Yu-hang; Cui, Guo-xin; Li, Chen; Qiu, Xiang-biao; Wu, Di; Lu, Yan-qing, E-mail: yqlu@nju.edu.cn [National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Geng, De-qiang [Jinan Jingzheng Electronics Co., Ltd., Jinan 250100 (China)

    2016-07-15

    Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (∼28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

  15. Broadband and wide angle near-unity absorption in graphene-insulator-metal thin film stacks

    Science.gov (United States)

    Zhang, H. J.; Zheng, G. G.; Chen, Y. Y.; Xu, L. H.

    2018-05-01

    Broadband unity absorption in graphene-insulator-metal (GIM) structures is demonstrated in the visible (VIS) and near-infrared (NIR) spectra. The spectral characteristics possess broadband absorption peaks, by simply choosing a stack of GIM, while no nanofabrication steps and patterning are required, and thus can be easily fabricated to cover a large area. The electromagnetic (EM) waves can be entirely trapped and the absorption can be greatly enhanced are verified with the finite-difference time-domain (FDTD) and rigorous coupled wave analysis (RCWA) methods. The position and the number of the absorption peak can be totally controlled by adjusting the thickness of the insulator layer. The proposed absorber maintains high absorption (above 90%) for both transverse electric (TE) and transverse magnetic (TM) polarizations, and for angles of incidence up to 80°. This work opens up a promising approach to realize perfect absorption (PA) with ultra-thin film, which could implicate many potential applications in optical detection and optoelectronic devices.

  16. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  17. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  18. Tc depression and superconductor-insulator transition in molybdenum nitride thin films

    Science.gov (United States)

    Ichikawa, F.; Makise, K.; Tsuneoka, T.; Maeda, S.; Shinozaki, B.

    2018-03-01

    We have studied that the Tc depression and the superconductor-insulator transition (SIT) in molybdenum nitride (MoN) thin films. Thin films were fabricated by reactive DC magnetron sputtering method onto (100) MgO substrates in the mixture of Ar and N2 gases. Several dozen MoN thin films were prepared in the range of 3 nm < thickness d < 60 nm. The resistance was measured by a DC four-probe technique. It is found that Tc decreases from 6.6 K for thick films with increase of the normal state sheet resistance {R}{{sq}}{{N}} and experimental data were fitted to the Finkel’stein formula using the bulk superconducting transition temperature Tc 0 = 6.45 K and the elastic scattering time of electron τ = 1.6 × 10‑16 s. From this analysis the critical sheet resistance Rc is found about 2 kΩ, which is smaller than the quantum sheet resistance R Q. This value of Rc is almost the same as those for 2D NbN films. The value of τ for MoN films is also the similar value for NbN films 1.0 × 10‑16 s, while Tc 0 is different from that for NbN films 14.85 K. It is indicated that the mechanism of SIT for MoN films is similar to that of NbN films, while the mean free path ℓ for MoN films is larger than that for NbN films.

  19. Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

    Directory of Open Access Journals (Sweden)

    Takayoshi Katase

    2017-05-01

    Full Text Available Infrared (IR transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2 as the active layer in a three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window.

  20. Quantum transport in new two-dimensional heterostructures: Thin films of topological insulators, phosphorene

    Science.gov (United States)

    Majidi, Leyla; Zare, Moslem; Asgari, Reza

    2018-06-01

    The unusual features of the charge and spin transport characteristics are investigated in new two-dimensional heterostructures. Intraband specular Andreev reflection is realized in a topological insulator thin film normal/superconducting junction in the presence of a gate electric field. Perfect specular electron-hole conversion is shown for different excitation energy values in a wide experimentally available range of the electric field and also for all angles of incidence when the excitation energy has a particular value. It is further demonstrated that the transmission probabilities of the incoming electrons from different spin subbands to the monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure have different behavior with the angle of incidence and perfect transmission occurs at defined angles of incidence to the proposed structure with different length of the N region, and different alignments of magnetization vectors. Moreover, the sign change of the spin-current density is demonstrated by tuning the chemical potential and exchange field of the F region.

  1. Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

    Science.gov (United States)

    Pi-Ho Hu, Vita; Chiu, Pin-Chieh

    2018-04-01

    The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

  2. Differential Hall-sensor Pulsed Eddy Current Probe for the Detection of Wall thinning in an Insulated Stainless Steel Pipe

    International Nuclear Information System (INIS)

    Park, D. G.; Angani, Chandra S.; Cheong, Y. M.; Kim, C. G.

    2010-01-01

    The local wall thinning is one of the most important factors to limit the life-extension of large structures, such as the pipe lines in the NPPs. The pipelines are covered with a thermal insulator for low thermal loss. The PEC testing is the promising technological approach to the NDT, and it has been principally developed for the measurement of surface flaws, subsurface flaws and corrosion. In the pulsed eddy current (PEC) technique, the excitation coil is driven by repeated pulses. According to the skin - depth relationship multiple frequency components penetrate to different depths, hence the PEC technique has the potential for bringing up deeper information about the tested sample. Because of the potential advantages of the PEC, prevalent investigations on this technique have been done. In the present study a differential probe which is used in the Pulsed Eddy Current (PEC) system has been fabricated for the detection of wall thinning of insulated pipelines in a nuclear power plant (NPP). This technique can be used as a potential tool to detect the corrosion or the wall thinning of the pipelines without removing the insulation

  3. Effects of Structural and Electronic Disorder in Topological Insulator Sb2Te3 Thin Films

    Science.gov (United States)

    Korzhovska, Inna

    Topological quantum matter is a unique and potentially transformative protectorate against disorder-induced backscattering. The ultimate disorder limits to the topological state, however, are still not known - understanding these limits is critical to potential applications in the fields of spintronics and information processing. In topological insulators spin-orbit interaction and time-reversal-symmetry invariance guarantees - at least up to a certain disorder strength - that charge transport through 2D gapless Dirac surface states is robust against backscattering by non-magnetic disorder. Strong disorder may destroy topological protection and gap out Dirac surface states, although recent theories predict that under severe electronic disorder a quantized topological conductance might yet reemerge. Very strong electronic disorder, however, is not trivial to install and quantify, and topological matter under such conditions thus far has not been experimentally tested. This thesis addresses the behavior of three-dimensional (3D) topological insulator (TI) films in a wide range of structural and electronic disorder. We establish strong positional disorder in thin (20-50 nm) Sb2Te 3 films, free of extrinsic magnetic dopants. Sb 2Te3 is a known 2nd generation topological insulator in the low-disorder crystalline state. It is also a known phase-change material that undergoes insulator-to-metal transition with the concurrent orders of magnitude resistive drop, where a huge range of disorder could be controllably explored. In this work we show that even in the absence of magnetic dopants, disorder may induce spin correlations detrimental to the topological state. Chapter 1 contains a brief introduction to the topological matter and describes the role played by disorder. This is followed by theory considerations and a survey of prior experimental work. Next we describe the motivation for our experiments and explain the choice of the material. Chapter 2 describes deposition

  4. Stability of low-carrier-density topological-insulator Bi2Se3 thin films and effect of capping layers

    International Nuclear Information System (INIS)

    Salehi, Maryam; Brahlek, Matthew; Koirala, Nikesh; Moon, Jisoo; Oh, Seongshik; Wu, Liang; Armitage, N. P.

    2015-01-01

    Although over the past number of years there have been many advances in the materials aspects of topological insulators (TIs), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the recent development of low-carrier-density bulk-insulating Bi 2 Se 3 thin films and their sensitivity to air demands reliable capping layers to stabilize their electronic properties. Here, we study the stability of the low-carrier-density Bi 2 Se 3 thin films in air with and without various capping layers using DC and THz probes. Without any capping layers, the carrier density increases by ∼150% over a week and by ∼280% over 9 months. In situ-deposited Se and ex situ-deposited poly(methyl methacrylate) suppress the aging effect to ∼27% and ∼88%, respectively, over 9 months. The combination of effective capping layers and low-carrier-density TI films will open up new opportunities in topological insulators

  5. Metal-insulator transition in SrTi1−xVxO3 thin films

    International Nuclear Information System (INIS)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-01-01

    Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

  6. Intrinsic conduction through topological surface states of insulating Bi{sub 2}Te{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoefer, Katharina; Becker, Christoph; Rata, Diana; Thalmeier, Peter; Tjeng, Liu Hao [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Swanson, Jesse [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); University of British Columbia, Vancouver (Canada)

    2015-07-01

    Topological insulators represent a new state of matter that open up new opportunities to create unique quantum particles. Many exciting experiments have been proposed by theory, yet, the main obstacle for their execution is material quality and cleanliness of the experimental conditions. The presence of tiny amounts of defects in the bulk or contaminants at the surface already mask these phenomena. We present the preparation, structural and spectroscopic characterisation of MBE-grown Bi{sub 2}Te{sub 3} thin films that are insulating in the bulk. Moreover, temperature dependent four-point-probe resistivity measurements of the Dirac states on surfaces that are intrinsically clean were conducted. The total amount of surface charge carries is in the order of 10{sup 12} cm{sup -2} and mobilities up to 4600 cm{sup 2}/Vs are observed. Importantly, these results are achieved by carrying out the preparation and characterisation all in-situ under ultra-high-vacuum conditions.

  7. Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

    Science.gov (United States)

    Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

    2018-04-01

    Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

  8. Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

    Science.gov (United States)

    Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

    2018-03-01

    Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

  9. Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling

    Science.gov (United States)

    Huebner, Torsten; Martens, Ulrike; Walowski, Jakob; Münzenberg, Markus; Thomas, Andy; Reiss, Günter; Kuschel, Timo

    2018-06-01

    In general, it is difficult to access the thermal conductivity of thin insulating films experimentally by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl2O4 (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO (0.7 W (K · m)‑1) and MgO (5.8 W (K · m)‑1), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.

  10. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

    International Nuclear Information System (INIS)

    Sarma, R.; Saikia, D.

    2010-01-01

    We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

  11. Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator.

    Science.gov (United States)

    Kwon, Jeong Hyun; Park, Junhong; Lee, Myung Keun; Park, Jeong Woo; Jeon, Yongmin; Shin, Jeong Bin; Nam, Minwoo; Kim, Choong-Ki; Choi, Yang-Kyu; Choi, Kyung Cheol

    2018-05-09

    The lack of reliable, transparent, and flexible electrodes and insulators for applications in thin-film transistors (TFTs) makes it difficult to commercialize transparent, flexible TFTs (TF-TFTs). More specifically, conventional high process temperatures and the brittleness of these elements have been hurdles in developing flexible substrates vulnerable to heat. Here, we propose electrode and insulator fabrication techniques considering process temperature, transmittance, flexibility, and environmental stability. A transparent and flexible indium tin oxide (ITO)/Ag/ITO (IAI) electrode and an Al 2 O 3 /MgO (AM)-laminated insulator were optimized at the low temperature of 70 °C for the fabrication of TF-TFTs on a polyethylene terephthalate (PET) substrate. The optimized IAI electrode with a sheet resistance of 7 Ω/sq exhibited the luminous transmittance of 85.17% and maintained its electrical conductivity after exposure to damp heat conditions because of an environmentally stable ITO capping layer. In addition, the electrical conductivity of IAI was maintained after 10 000 bending cycles with a tensile strain of 3% because of the ductile Ag film. In the metal/insulator/metal structure, the insulating and mechanical properties of the optimized AM-laminated film deposited at 70 °C were significantly improved because of the highly dense nanolaminate system, compared to those of the Al 2 O 3 film deposited at 70 °C. In addition, the amorphous indium-gallium-zinc oxide (a-IGZO) was used as the active channel for TF-TFTs because of its excellent chemical stability. In the environmental stability test, the ITO, a-IGZO, and AM-laminated films showed the excellent environmental stability. Therefore, our IGZO-based TFT with IAI electrodes and the 70 °C AM-laminated insulator was fabricated to evaluate robustness, transparency, flexibility, and process temperature, resulting in transfer characteristics comparable to those of an IGZO-based TFT with a 150 °C Al 2 O 3

  12. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  13. Electromagnetic waves in a topological insulator thin film stack: helicon-like wave mode and photonic band structure.

    Science.gov (United States)

    Inoue, Jun-ichi

    2013-09-09

    We theoretically explore the electromagnetic modes specific to a topological insulator superlattice in which topological and conventional insulator thin films are stacked periodically. In particular, we obtain analytic formulas for low energy mode that corresponds to a helicon wave, as well as those for photonic bands. We illustrate that the system can be modeled as a stack of quantum Hall layers whose conductivity tensors alternately change signs, and then we analyze the photonic band structures. This subject is a natural extension of a previous study by Tselis et al., which took into consideration a stack of identical quantum Hall layers but their discussion was limited into a low energy mode. Thus we provide analytic formulas for photonic bands and compare their features between the two systems. Our central findings in the topological insulator superlattice are that a low energy mode corresponding to a helicon wave has linear dispersion instead of the conventional quadratic form, and that a robust gapless photonic band appears although the system considered has spacial periodicity. In addition, we demonstrate that the photonic bands agree with the numerically calculated transmission spectra.

  14. Magnetic field induced superconductor-insulator transitions for ultra-thin Bi films on the different underlayers

    International Nuclear Information System (INIS)

    Makise, K; Kawaguti, T; Shinozaki, B

    2009-01-01

    This work shows the experimental results of the superconductor-insulator (S-I) transition for ultra-thin Bi films in magnetic fields. The quench-condensed (q-c) Bi film onto insulating underlayers have been interpreted to be homogeneous. In contrast, the Bi film without underlayers has been regarded as a granular film. The electrical transport properties of ultra-thin metal films near the S-I transition depend on the structure of the film. In order to confirm the effect of the underlayer to the homogeneity of the superconducting films, we investigate the characteristics of S-I transitions of q-c nominally homogeneous Bi films on underlayers of two insulating materials, SiO, and Sb. Under almost the same deposition condition except for the material of underlayer, we prepared the Bi films by repeating the additional deposition and performed in-situ electrical measurement. It is found that the transport properties near the S-I transitions show the remarkable difference between two films on different underlayers. As for Bi films on SiO, it turned out that the temperature dependence of resistance per square R sq (T) of the field-tuned transition and the thickness-tuned transition shows similar behavior; it was a thermally activated form. On the other hand, the R sq (T) of Bi films on Sb for thickness-tuned S-I transition showed logarithmic temperature dependence, but that for field-tuned S-I transition showed a thermally activated form.

  15. Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO2: recovery of high conductivity

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2016-01-01

    We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nb-doped TiO 2 (TNO). The insulating TNO films were intentionally fabricated by annealing conductive TNO films in oxygen ambient at 400 °C. Reduced free carrier absorption in the insulating TNO films indicated carrier compensation due to excess oxygen. With H 2 -annealing, both carrier density and Hall mobility recovered to the level of conducting TNO, demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers. (paper)

  16. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

    Science.gov (United States)

    Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

    2017-06-14

    We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

  17. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  18. Study of Ho-doped Bi{sub 2}Te{sub 3} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, S. E. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Collins-McIntyre, L. J.; Zhang, S. L.; Chen, Y. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Kellock, A. J.; Pushp, A.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Harris, J. S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-11-02

    Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi{sub 2}Te{sub 3} thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μ{sub B}/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.

  19. Thickness dependent quantum oscillations of transport properties in topological insulator Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N. [National Technical University “Kharkov Polytechnic Institute,” 21 Frunze St., Kharkov 61002 (Ukraine); Dresselhaus, M. S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

    2015-02-02

    The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18−600 nm) of p-type topological insulator Bi{sub 2}Te{sub 3} thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18–100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi{sub 2}Te{sub 3} quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi{sub 2}Te{sub 3} and are inherent to topological insulators.

  20. Field-tuned superconductor-insulator transitions and Hall resistance in thin polycrystalline MoN films

    Science.gov (United States)

    Makise, Kazumasa; Ichikawa, Fusao; Asano, Takayuki; Shinozaki, Bunju

    2018-02-01

    We report on the superconductor-insulator transitions (SITs) of disordered molybdenum nitride (MoN) thin films on (1 0 0) MgO substrates as a function of the film thickness and magnetic fields. The T c of the superconducting MoN films, which exhibit a sharp superconducting transition, monotonically decreases as the normal state R sq increases with a decreasing film thickness. For several films with different thicknesses, we estimate the critical field H c and the product zν  ≃  0.6 of the dynamical exponent z and the correlation length exponent ν using a finite scaling analysis. The value of this product can be explained by the (2  +  1) XY model. We found that the Hall resistance ΔR xy (H) is maximized when the magnetic field satisfies H HP(T) \\propto |1  -  T/T C0| in the superconducting state and also in the normal states owning to the superconducting fluctuation corresponding to the ghost critical magnetic field. We measured the Hall conductivity δσ xy (H)  =  σ xy (H)  -  σ xyn and fit the Gaussian approximation theory for δσ xy (H) to the experimental data. Agreement between the data and the theory beyond H c suggests the survival of the Cooper pair in the insulating region of the SIT.

  1. Hidden landscapes in thin film topological insulators: between order and disorder, 2D and 3D, normal and topological phases

    Science.gov (United States)

    Oh, Seongshik

    Topological insulator (TI) is one of the rare systems in the history of condensed matter physics that is initiated by theories and followed by experiments. Although this theory-driven advance helped move the field quite fast despite its short history, apparently there exist significant gaps between theories and experiments. Many of these discrepancies originate from the very fact that the worlds readily accessible to theories are often far from the real worlds that are available in experiments. For example, the very paradigm of topological protection of the surface states on Z2 TIs such as Bi2Se3, Bi2Te3, Sb2Te3, etc, is in fact valid only if the sample size is infinite and the crystal momentum is well-defined in all three dimensions. On the other hand, many widely studied forms of TIs such as thin films and nano-wires have significant confinement in one or more of the dimensions with varying level of disorders. In other words, many of the real world topological systems have some important parameters that are not readily captured by theories, and thus it is often questionable how far the topological theories are valid to real systems. Interestingly, it turns out that this very uncertainty of the theories provides additional control knobs that allow us to explore hidden topological territories. In this talk, I will discuss how these additional knobs in thin film topological insulators reveal surprising, at times beautiful, landscapes at the boundaries between order and disorder, 2D and 3D, normal and topological phases. This work is supported by Gordon and Betty Moore Foundation's EPiQS Initiative (GBMF4418).

  2. Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hua-Mao [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Tai, Ya-Hsiang [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chen, Kuan-Fu [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chiang, Hsiao-Cheng [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Liu, Kuan-Hsien [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Lee, Chao-Kuei [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Lin, Wei-Ting; Cheng, Chun-Cheng; Tu, Chun-Hao; Liu, Chu-Yu [Advanced Technology Research Center, AU Optronics Corp, Hsinchu, Taiwan (China)

    2015-11-30

    This study examined the impact of the low-temperature stacking gate insulator on the gate bias instability of a-InGaZnO thin film transistors in flexible electronics applications. Although the quality of SiN{sub x} at low process/deposition temperature is better than that of SiO{sub x} at similarly low process/deposition temperature, there is still a very large positive threshold voltage (V{sub th}) shift of 9.4 V for devices with a single low-temperature SiN{sub x} gate insulator under positive gate bias stress. However, a suitable oxide–nitride–oxide-stacked gate insulator exhibits a V{sub th} shift of only 0.23 V. This improvement results from the larger band offset and suitable gate insulator thickness that can effectively suppress carrier trapping behavior. - Highlights: • The cause of the bias instability for a low-temperature gate insulator is verified. • A triple-stacked gate insulator was fabricated. • A suitable triple stacked gate insulator shows only 0.23 V threshold voltage shift.

  3. Long-ranged interactions in thin TiN films at the superconductor-insulator transition?

    Energy Technology Data Exchange (ETDEWEB)

    Kronfeldner, Klaus; Strunk, Christoph [Institute for Experimental and Applied Physics, University of Regensburg (Germany); Baturina, Tatyana [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk (Russian Federation)

    2015-07-01

    We measured IV-characteristics and magnetoresistance of square TiN-films in the vicinity of the disorder-tuned superconductor-insulator transition (SIT) for different sizes (5 μm to 240 μm). While the films are superconducting at zero magnetic field, at finite fields a SIT occurs. The resistance shows thermally activated behaviour on both sides of the SIT. Deep in the superconducting regime the activation energy grows linear with the sample size as expected for a size-independent critical current density. Closer to the SIT the activation energy becomes clearly size independent. On the insulating side the magnetoresistance maximum and the activation energy both grow logarithmically with sample size which is consistent with a size-limited charge BKT (Berezinskii-Kosterlitz-Thouless) scenario. In order to test for the presence of long-ranged interactions in our films, we investigate the influence of a topgate. It is expected to screen the possible long-ranged interactions as the distance of the film to the gate is much shorter than the electrostatic screening length deduced from the size-dependent activation energy.

  4. Atomically Thin Mica Flakes and Their Application as Ultrathin Insulating Substrates for Graphene

    NARCIS (Netherlands)

    Castellanos-Gomez, Andres; Wojtaszek, Magdalena; Tombros, Nikolaos; Agrait, Nicolas; van Wees, Bart J.; Rubio-Bollinger, Gabino; Agraït, Nicolás

    2011-01-01

    By mechanical exfoliation, it is possible to deposit atomically thin mica flakes down to single-monolayer thickness on SiO(2)/Si wafers. The optical contrast of these mica flakes on top of a SiO(2)/Si substrate depends on their thickness, the illumination wavelength, and the SiO(2) substrate

  5. Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

    Science.gov (United States)

    Ngabonziza, P.; Wang, Y.; Brinkman, A.

    2018-04-01

    An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

  6. Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

    Science.gov (United States)

    Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

    2017-10-01

    We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

  7. Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Z., E-mail: ziqian.ding@materials.ox.ac.uk; Abbas, G. A.; Assender, H. E. [Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom); Morrison, J. J.; Sanchez-Romaguera, V.; Yeates, S. G. [School of Chemistry, University of Manchester, Manchester M13 9PL (United Kingdom); Taylor, D. M. [School of Electronic Engineering, Bangor University, Bangor LL57 1UT (United Kingdom)

    2013-12-02

    A systematic investigation has been undertaken, in which thin polymer buffer layers with different ester content have been spin-coated onto a flash-evaporated, cross-linked diacrylate gate-insulator to form bottom-gate, top-contact organic thin-film transistors. The highest device mobilities, ∼0.65 cm{sup 2}/V s and ∼1.00 cm{sup 2}/V s for pentacene and dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b]thiophene (DNTT), respectively, were only observed for a combination of large-grain (∼1–2 μm) semiconductor morphology coupled with a non-polar dielectric surface. No correlation was found between semiconductor grain size and dielectric surface chemistry. The threshold voltage of pentacene devices shifted from −10 V to −25 V with decreasing surface ester content, but remained close to 0 V for DNTT.

  8. Nonlinear optical observation of coherent acoustic Dirac plasmons in thin-film topological insulators

    Science.gov (United States)

    Glinka, Yuri D.; Babakiray, Sercan; Johnson, Trent A.; Holcomb, Mikel B.; Lederman, David

    2016-09-01

    Low-energy collective electronic excitations exhibiting sound-like linear dispersion have been intensively studied both experimentally and theoretically for a long time. However, coherent acoustic plasmon modes appearing in time-domain measurements are rarely observed due to Landau damping by the single-particle continua. Here we report on the observation of coherent acoustic Dirac plasmon (CADP) modes excited in indirectly (electrostatically) opposite-surface coupled films of the topological insulator Bi2Se3. Using transient second-harmonic generation, a technique capable of independently monitoring the in-plane and out-of-plane electron dynamics in the films, the GHz-range oscillations were observed without corresponding oscillations in the transient reflectivity. These oscillations were assigned to the transverse magnetic and transverse electric guided CADP modes induced by the evanescent guided Lamb acoustic waves and remained Landau undamped due to fermion tunnelling between the opposite-surface Dirac states.

  9. Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

    International Nuclear Information System (INIS)

    Nakahara, Yoshio; Kawa, Haruna; Yoshiki, Jun; Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio; Yamakado, Hideo; Fukuda, Hisashi; Kimura, Keiichi

    2012-01-01

    Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol–gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 °C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol–gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: ► Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. ► The ultra-thin PSQ film could be cured at low temperatures of less than 120 °C. ► The PSQ film showed the almost perfect solubilization resistance to organic solvent. ► The surface of the PSQ film was very smooth at a nano-meter level. ► Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

  10. Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Nakahara, Yoshio; Kawa, Haruna [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Yoshiki, Jun [Division of Information and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio [Konishi Chemical IND. Co., LTD., 3-4-77 Kozaika, Wakayama 641-0007 (Japan); Yamakado, Hideo [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Fukuda, Hisashi [Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kimura, Keiichi, E-mail: kkimura@center.wakayama-u.ac.jp [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan)

    2012-10-01

    Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol-gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 Degree-Sign C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol-gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: Black-Right-Pointing-Pointer Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. Black-Right-Pointing-Pointer The ultra-thin PSQ film could be cured at low temperatures of less than 120 Degree-Sign C. Black-Right-Pointing-Pointer The PSQ film showed the almost perfect solubilization resistance to organic solvent. Black-Right-Pointing-Pointer The surface of the PSQ film was very smooth at a nano-meter level. Black-Right-Pointing-Pointer Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

  11. Poly(4-vinylphenol gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2016-03-01

    Full Text Available A Microwave-Induction Heating (MIH scheme is proposed for the poly(4-vinylphenol (PVP gate insulator cross-linking process to replace the traditional oven heating cross-linking process. The cross-linking time is significantly decreased from 1 h to 5 min by heating the metal below the PVP layer using microwave irradiation. The necessary microwave power was substantially reduced to about 50 W by decreasing the chamber pressure. The MIH scheme is a good candidate to replace traditional thermal heating for cross-linking of PVP as the gate insulator for organic thin-film-transistors.

  12. Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Hsia, Mao-Yuan; Wang, Shea-Jue; Huang, Bohr-Ran; Lee, Win-Der

    2016-03-01

    A Microwave-Induction Heating (MIH) scheme is proposed for the poly(4-vinylphenol) (PVP) gate insulator cross-linking process to replace the traditional oven heating cross-linking process. The cross-linking time is significantly decreased from 1 h to 5 min by heating the metal below the PVP layer using microwave irradiation. The necessary microwave power was substantially reduced to about 50 W by decreasing the chamber pressure. The MIH scheme is a good candidate to replace traditional thermal heating for cross-linking of PVP as the gate insulator for organic thin-film-transistors.

  13. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  14. Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy

    Science.gov (United States)

    Wu, Mingzhong

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.1 The experiments made use of Pt/BaFe12O19 bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe12O19 is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization (M⊥) in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When M⊥ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied. 1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038/ncomms12688 (2016).

  15. On the carrier transport in metal-insulator-metal structures for CdTe thin film

    International Nuclear Information System (INIS)

    Choi, K.W.; Choi, C.K.

    1982-01-01

    According to the energy band model for the Al-CdTe-Ag sandwich structure, we have investigate to the mechanism of the current limited transport(CLT). As the bias voltage applied to the Alsup(+) and Agsup(+) electrode, the potential barrier difference for this structure was found 0.2eV. From what this results, we conclude that the mechanism of the current limited transport due to the potential barrier of the contact limited current. Not only this phenomena but also the annealing effect of thin film was shown that the distingushable for virgin film. (Author)

  16. Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2006-01-01

    We investigate the dielectric properties of a thin VO2 film in the terahertz frequency range in the vicinity of the semiconductor-metal phase transition. Phase-sensitive broadband spectroscopy in the frequency region below the phonon bands of VO2 gives insight into the conductive properties...... of the film during the phase transition. We compare our experimental data with models proposed for the evolution of the phase transition. The experimental data show that the phase transition occurs via the gradual growth of metallic domains in the film, and that the dielectric properties of the film...

  17. Stability Study of Flexible 6,13-Bis(triisopropylsilylethynylpentacene Thin-Film Transistors with a Cross-Linked Poly(4-vinylphenol/Yttrium Oxide Nanocomposite Gate Insulator

    Directory of Open Access Journals (Sweden)

    Jin-Hyuk Kwon

    2016-03-01

    Full Text Available We investigated the electrical and mechanical stability of flexible 6,13-bis(triisopropylsilylehtynylpentacene (TIPS-pentacene thin-film transistors (TFTs that were fabricated on polyimide (PI substrates using cross-linked poly(4-vinylphenol (c-PVP and c-PVP/yttrium oxide (Y2O3 nanocomposite films as gate insulators. Compared with the electrical characteristics of TIPS-pentacene TFTs with c-PVP insulators, the TFTs with c-PVP/Y2O3 nanocomposite insulators exhibited enhancements in the drain current and the threshold voltage due to an increase in the dielectric capacitance. In electrical stability experiments, a gradual decrease in the drain current and a negative shift in the threshold voltage occurred during prolonged bias stress tests, but these characteristic variations were comparable for both types of TFT. On the other hand, the results of mechanical bending tests showed that the characteristic degradation of the TIPS-pentacene TFTs with c-PVP/Y2O3 nanocomposite insulators was more critical than that of the TFTs with c-PVP insulators. In this study, the detrimental effect of the nanocomposite insulator on the mechanical stability of flexible TIPS-pentacene TFTs was found to be caused by physical adhesion of TIPS-pentacene molecules onto the rough surfaces of the c-PVP/Y2O3 nanocomposite insulator. These results indicate that the dielectric and morphological properties of polymeric nanocomposite insulators are significant when considering practical applications of flexible electronics operated at low voltages.

  18. Acoustic phonon dynamics in thin-films of the topological insulator Bi2Se3

    International Nuclear Information System (INIS)

    Glinka, Yuri D.; Babakiray, Sercan; Johnson, Trent A.; Holcomb, Mikel B.; Lederman, David

    2015-01-01

    Transient reflectivity traces measured for nanometer-sized films (6–40 nm) of the topological insulator Bi 2 Se 3 revealed GHz-range oscillations driven within the relaxation of hot carriers photoexcited with ultrashort (∼100 fs) laser pulses of 1.51 eV photon energy. These oscillations have been suggested to result from acoustic phonon dynamics, including coherent longitudinal acoustic phonons in the form of standing acoustic waves. An increase of oscillation frequency from ∼35 to ∼70 GHz with decreasing film thickness from 40 to 15 nm was attributed to the interplay between two different regimes employing traveling-acoustic-waves for films thicker than 40 nm and the film bulk acoustic wave resonator (FBAWR) modes for films thinner than 40 nm. The amplitude of oscillations decays rapidly for films below 15 nm thick when the indirect intersurface coupling in Bi 2 Se 3 films switches the FBAWR regime to that of the Lamb wave excitation. The frequency range of coherent longitudinal acoustic phonons is in good agreement with elastic properties of Bi 2 Se 3

  19. Spin-orbit torque induced switching in a magnetic insulator thin film with perpendicular magnetic anisotropy

    Science.gov (United States)

    Li, J. X.; Yu, G. Q.; Tang, C.; Wang, K. L.; Shi, J.

    Spin-orbit torque (SOT) has been demonstrated to be efficient to manipulate the magnetization in heavy-metal/ferromagnetic metal (HM/FMM) heterostructures. In HM/magnetic insulator (MI) heterostructures, charge currents do not flow in MI, but pure spin currents generated by the spin Hall effect in HM can enter the MI layer to cause magnetization dynamics. Here we report SOT-induced magnetization switching in Tm3Fe5O12/Pt heterostructures, where Tm3Fe5O12 (TmIG) is a MI grown by pulsed laser deposition with perpendicular magnetic anisotropy. The anomalous Hall signal in Pt is used as a probe to detect the magnetization switching. Effective magnetic fields due to the damping-like and field-like torques are extracted using a harmonic Hall detection method. The experiments are carried out in heterostructures with different TmIG film thicknesses. Both the switching and harmonic measurements indicate a more efficient SOT generation in HM/MI than in HM/FMM heterostructures. Our comprehensive experimental study and detailed analysis will be presented. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Basic Energy Sciences under Award No. SC0012670.

  20. Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films.

    Science.gov (United States)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong; Lee, Jaekwang; Roh, Seulki; Jung, In-Ho; Hwang, Jungseek; Kim, Sung Wng; Noh, Tae Won; Ohta, Hiromichi; Choi, Woo Seok

    2017-10-01

    Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO x epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeO x thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

    Science.gov (United States)

    Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

    2017-09-01

    We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

  2. Dynamics of solid thin-film dewetting in the silicon-on-insulator system

    Energy Technology Data Exchange (ETDEWEB)

    Bussmann, E; Cheynis, F; Leroy, F; Mueller, P [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM) CNRS UPR 3118, Aix-Marseille Universite, 13288 Marseille (France); Pierre-Louis, O, E-mail: muller@cinam.univ-mrs.fr [LPMCN, Universite Lyon 1, 43 Bd du 11 novembre, 69622 Villeurbane (France)

    2011-04-15

    Using low-energy electron microscopy movies, we have measured the dewetting dynamics of single-crystal Si(001) thin films on SiO{sub 2} substrates. During annealing (T>700 deg. C), voids open in the Si, exposing the oxide. The voids grow, evolving Si fingers that subsequently break apart into self-organized three-dimensional (3D) Si nanocrystals. A kinetic Monte Carlo model incorporating surface and interfacial free energies reproduces all the salient features of the morphological evolution. The dewetting dynamics is described using an analytic surface-diffusion-based model. We demonstrate quantitatively that Si dewetting from SiO{sub 2} is mediated by surface-diffusion driven by surface free-energy minimization.

  3. Dynamics of solid thin-film dewetting in the silicon-on-insulator system

    Science.gov (United States)

    Bussmann, E.; Cheynis, F.; Leroy, F.; Müller, P.; Pierre-Louis, O.

    2011-04-01

    Using low-energy electron microscopy movies, we have measured the dewetting dynamics of single-crystal Si(001) thin films on SiO2 substrates. During annealing (T>700 °C), voids open in the Si, exposing the oxide. The voids grow, evolving Si fingers that subsequently break apart into self-organized three-dimensional (3D) Si nanocrystals. A kinetic Monte Carlo model incorporating surface and interfacial free energies reproduces all the salient features of the morphological evolution. The dewetting dynamics is described using an analytic surface-diffusion-based model. We demonstrate quantitatively that Si dewetting from SiO2 is mediated by surface-diffusion driven by surface free-energy minimization.

  4. Dynamics of solid thin-film dewetting in the silicon-on-insulator system

    International Nuclear Information System (INIS)

    Bussmann, E; Cheynis, F; Leroy, F; Mueller, P; Pierre-Louis, O

    2011-01-01

    Using low-energy electron microscopy movies, we have measured the dewetting dynamics of single-crystal Si(001) thin films on SiO 2 substrates. During annealing (T>700 deg. C), voids open in the Si, exposing the oxide. The voids grow, evolving Si fingers that subsequently break apart into self-organized three-dimensional (3D) Si nanocrystals. A kinetic Monte Carlo model incorporating surface and interfacial free energies reproduces all the salient features of the morphological evolution. The dewetting dynamics is described using an analytic surface-diffusion-based model. We demonstrate quantitatively that Si dewetting from SiO 2 is mediated by surface-diffusion driven by surface free-energy minimization.

  5. In-Ga-Zn-oxide thin-film transistors with Sb2TeOx gate insulators fabricated by reactive sputtering using a metallic Sb2Te target

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok

    2011-01-01

    Using reactive sputtering, we made transparent amorphous Sb 2 TeO x thin films from a metallic Sb 2 Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb 2 TeO x gate insulators deposited at room temperature showed a large hysteresis with a counter clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb 2 TeO x films formed at 250 .deg. C. After the IGZO TFT had been annealed at 200 .deg. C for 1 hour in an O 2 ambient, the mobility of the IGZO TFT was 22.41 cm 2 /Vs, and the drain current on-off ratio was ∼10 8 .

  6. Ultrafast terahertz spectroscopy study of a Kondo insulating thin-film Sm B6 : Evidence for an emergent surface state

    Science.gov (United States)

    Zhang, Jingdi; Yong, Jie; Takeuchi, Ichiro; Greene, Richard L.; Averitt, Richard D.

    2018-04-01

    We utilize terahertz time domain spectroscopy to investigate thin films of the heavy fermion compound Sm B6 , a prototype Kondo insulator. Temperature-dependent terahertz (THz) conductivity measurements reveal a rapid decrease in the Drude weight and carrier scattering rate at ˜T*=20 K , well below the hybridization gap onset temperature (100 K). Moreover, a low-temperature conductivity plateau (below 20 K) suggests the emergence of a surface state with an effective electron mass of 0.1 me . The conductivity dynamics following optical excitation is also measured and interpreted using Rothwarf-Taylor (R-T) phenomenology, yielding a hybridization gap energy of 17 meV. However, R-T modeling of the conductivity dynamics reveals a deviation from the expected thermally excited quasiparticle density at temperatures below 20 K, indicative of another channel opening up in the low-energy electrodynamics. Taken together, these results are consistent with the onset of a surface state well below the crossover temperature (100 K) after long-range coherence of the f -electron Kondo lattice is established.

  7. Label-free electrical determination of trypsin activity by a silicon-on-insulator based thin film resistor.

    Science.gov (United States)

    Neff, Petra A; Serr, Andreas; Wunderlich, Bernhard K; Bausch, Andreas R

    2007-10-08

    A silicon-on-insulator (SOI) based thin film resistor is employed for the label-free determination of enzymatic activity. We demonstrate that enzymes, which cleave biological polyelectrolyte substrates, can be detected by the sensor. As an application, we consider the serine endopeptidase trypsin, which cleaves poly-L-lysine (PLL). We show that PLL adsorbs quasi-irreversibly to the sensor and is digested by trypsin directly at the sensor surface. The created PLL fragments are released into the bulk solution due to kinetic reasons. This results in a measurable change of the surface potential allowing for the determination of trypsin concentrations down to 50 ng mL(-1). Chymotrypsin is a similar endopeptidase with a different specificity, which cleaves PLL with a lower efficiency as compared to trypsin. The activity of trypsin is analyzed quantitatively employing a kinetic model for enzyme-catalyzed surface reactions. Moreover, we have demonstrated the specific inactivation of trypsin by a serine protease inhibitor, which covalently binds to the active site of the enzyme.

  8. Formation and dielectric properties of polyelectrolyte multilayers studied by a silicon-on-insulator based thin film resistor.

    Science.gov (United States)

    Neff, Petra A; Wunderlich, Bernhard K; Klitzing, Regine V; Bausch, Andreas R

    2007-03-27

    The formation of polyelectrolyte multilayers (PEMs) is investigated using a silicon-on-insulator based thin film resistor which is sensitive to variations of the surface potential. The buildup of the PEMs at the silicon oxide surface of the device can be observed in real time as defined potential shifts. The influence of polymer charge density is studied using the strong polyanion poly(styrene sulfonate), PSS, combined with the statistical copolymer poly(diallyl-dimethyl-ammoniumchloride-stat-N-methyl-N-vinylacetamide), P(DADMAC-stat-NMVA), at various degrees of charge (DC). The multilayer formation stops after a few deposition steps for a DC below 75%. We show that the threshold of surface charge compensation corresponds to the threshold of multilayer formation. However, no reversion of the preceding surface charge was observed. Screening of polyelectrolyte charges by mobile ions within the polymer film leads to a decrease of the potential shifts with the number of layers deposited. This decrease is much slower for PEMs consisting of P(DADMAC-stat-NMVA) and PSS as compared to PEMs consisting of poly(allylamine-hydrochloride), PAH, and PSS. From this, significant differences in the dielectric constants of the polyelectrolyte films and in the concentration of mobile ions within the films can be derived.

  9. Poly(4-vinylphenol-co-methyl methacrylate) / titanium dioxide nanocomposite gate insulators for 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xue; Park, Jiho; Baang, Sungkeun; Park, Jaehoon [Hallym University, Chuncheon (Korea, Republic of); Piao, Shanghao; Kim, Sohee; Choi, Hyoungjin [Inha University, Incheon (Korea, Republic of)

    2014-12-15

    Poly(4-vinylphenol-co-methyl methacrylate) / titanium dioxide (TiO{sub 2}) nanocomposite insulators were fabricated for application in 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) thin-film transistors (TFTs). The capacitance of the fabricated capacitors with this nanocomposite insulator increased with increasing content of the high-dielectric-constant TiO{sub 2} nanoparticles. Nonetheless, particle aggregates, which were invariably produced in the insulator at higher TiO{sub 2} contents, augmented gate-leakage currents during device operation while the rough surface of the insulator obstructed charge transport in the conducting channel of the TIPS-Pn TFTs. These results suggest a significant effect of the morphological characteristics of nanocomposite insulators on TFT performance, as well as on their dielectric properties. Herein, the optimal particle composition was determined to be approximately 1.5 wt%, which contributed to characteristic improvements in the drain current, field-effect mobility, and threshold voltage of TIPS-Pn TFTs.

  10. High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight

    Science.gov (United States)

    Sun, Dawei; Chen, Cihai; Zhang, Jun; Wu, Xiaomin; Chen, Huipeng; Guo, Tailiang

    2018-01-01

    Fabrication of metal oxide thin film transistor (MOTFT) arrays using the inkjet printing process has caused tremendous interest for low-cost and large-area flexible electronic devices. However, the inkjet-printed MOTFT arrays usually exhibited a non-uniform geometry due to the coffee ring effect, which restricted their commercial application. Therefore, in this work, a strategy is reported to control the geometry and enhance device performance of inkjet-printed MOTFT arrays by the addition of an insulating polymer to the precursor solution prior to film deposition. Moreover, the impact of the polymer molecular weight (MW) on the geometry, chemical constitution, crystallization, and MOTFT properties of inkjet-printed metal oxide depositions was investigated. The results demonstrated that with an increase of MW of polystyrene (PS) from 2000 to 200 000, the coffee ring was gradually faded and the coffee ring effect was completely eliminated when MW reached 200 000, which is associated with the enhanced viscosity with the insulating polymer, providing a high resistance to the outward capillary flow, which facilitated the depinning of the contact line, leading to the elimination of the coffee ring. More importantly, the carrier mobility increased significantly from 4.2 cm2 V-1 s-1 up to 13.7 cm2 V-1 s-1 as PS MW increased from 2000 to 200 000, which was about 3 times that of the pristine In2O3 TFTs. Grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy results indicated that PS doping of In2O3 films not only frustrated crystallization but also altered chemical constitution by enhancing the formation of the M-O structure, both of which facilitated the carrier transport. These results demonstrated that the simple polymer additive process provides a promising method that can efficiently control the geometry of MO arrays during inkjet printing and maximize the device performance of MOTFT arrays, which showed great potential for the application in next

  11. A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals.

    Science.gov (United States)

    Kamlapure, Anand; Saraswat, Garima; Ganguli, Somesh Chandra; Bagwe, Vivas; Raychaudhuri, Pratap; Pai, Subash P

    2013-12-01

    We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe2 single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.

  12. High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

    International Nuclear Information System (INIS)

    Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

    2014-01-01

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

  13. Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

    Science.gov (United States)

    Takahashi, Takanori; Oikawa, Kento; Hoga, Takeshi; Uraoka, Yukiharu; Uchiyama, Kiyoshi

    2017-10-01

    In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface. The IGZO-TFT with solution processed SrZrO3 showed good switching property and enough saturation features, i.e. field effect mobility of 1.7cm2/Vs, threshold voltage of 4.8V, sub-threshold swing of 147mV/decade, and on/off ratio of 2.3×107. Comparing to the TFTs with conventional SiO2 gate insulator, the sub-threshold swing was improved by smooth surface and high field effect due to the high dielectric constant of SrZrO3. These results clearly showed that use of solution processed high-k SrZrO3 gate insulator could improve sub-threshold swing. In addition, the residual carbon originated from organic precursors makes TFT performances degraded.

  14. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  15. Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

    Science.gov (United States)

    Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

    2015-03-04

    Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

  16. Theory of strain-controlled magnetotransport and stabilization of the ferromagnetic insulating phase in manganite thin films.

    Science.gov (United States)

    Mukherjee, Anamitra; Cole, William S; Woodward, Patrick; Randeria, Mohit; Trivedi, Nandini

    2013-04-12

    We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic charge-ordered insulator, previously inaccessible to experiments, becomes stable.

  17. Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

    Science.gov (United States)

    Kündel, J.; Pontiller, P.; Müller, C.; Obermeier, G.; Liu, Z.; Nateprov, A. A.; Hörner, A.; Wixforth, A.; Horn, S.; Tidecks, R.

    2013-03-01

    A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.

  18. UV light induced insulator-metal transition in ultra-thin ZnO/TiO{sub x} stacked layer grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-08-28

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality

  19. Thickness oscillations of the transport properties in n-type Bi{sub 2}Te{sub 3} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Budnik, A.V.; Sipatov, A.Yu.; Nashchekina, O.N. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Fedorov, A.G. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Dresselhaus, M.S.; Tang, S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

    2015-11-02

    The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20–155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi{sub 2}Te{sub 3} topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi{sub 2}Te{sub 3} films connected with the topological insulator nature of the bismuth telluride. - Highlights: • The thickness dependences of Bi{sub 2}Te{sub 3} thin films kinetic coefficients were obtained. • The dependences have oscillatory character with a substantial undamped amplitude. • The oscillation period increases with decreasing film thickness. • The oscillations are attributed to electron confinement in the film growth direction. • It is suggested that topological surface layer affects quantum processes in films.

  20. Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001 with tunable Fermi levels

    Directory of Open Access Journals (Sweden)

    Hua Guo

    2014-05-01

    Full Text Available In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1 thin films grown by molecular beam epitaxy on SrTiO3(001. Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES. ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

  1. Deposition of SiC x H y O z thin film on epoxy resin by nanosecond pulsed APPJ for improving the surface insulating performance

    Science.gov (United States)

    Qing, XIE; Haofan, LIN; Shuai, ZHANG; Ruixue, WANG; Fei, KONG; Tao, SHAO

    2018-02-01

    Non-thermal plasma surface modification for epoxy resin (EP) to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulated transmission line. In this paper, a pulsed Ar dual dielectrics atmospheric-pressure plasma jet (APPJ) was used for SiC x H y O z thin film deposition on EP samples. The film deposition was optimized by varying the treatment time while other parameters were kept at constants (treatment distance: 10 mm, precursor flow rate: 0.6 l min-1, maximum instantaneous power: 3.08 kW and single pulse energy: 0.18 mJ). It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18% and 13% when the deposition time was 3 min, respectively. The flashover voltage reduced as treatment time increased. Moreover, all the surface conductivity, surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min. Other measurements, such as atomic force microscopy and scanning electron microscope for EP surface morphology, Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions, optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms. The results indicated that the original organic groups (C-H, C-C, C=O, C=C) were gradually replaced by the Si containing inorganic groups (Si-O-Si and Si-OH). The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage. However, when the plasma treatment time was longer than 3 min, the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.

  2. High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

    2016-09-01

    We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

  3. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  4. Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

    Science.gov (United States)

    Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

    2014-12-01

    The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

  5. Influence of germanium on thermal dewetting and agglomeration of the silicon template layer in thin silicon-on-insulator

    International Nuclear Information System (INIS)

    Zhang, P P; Yang, B; Rugheimer, P P; Roberts, M M; Savage, D E; Lagally, M G; Liu Feng

    2009-01-01

    We investigate the influence of heteroepitaxially grown Ge on the thermal dewetting and agglomeration of the Si(0 0 1) template layer in ultrathin silicon-on-insulator (SOI). We show that increasing Ge coverage gradually destroys the long-range ordering of 3D nanocrystals along the (1 3 0) directions and the 3D nanocrystal shape anisotropy that are observed in the dewetting and agglomeration of pure SOI(0 0 1). The results are qualitatively explained by Ge-induced bond weakening and decreased surface energy anisotropy. Ge lowers the dewetting and agglomeration temperature to as low as 700 0 C.

  6. Metal-Insulator Phase Transition in thin VO2 films: A Look from the Far Infrared Side

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, B. M.; Thoman, A.

    Vanadium dioxide (VO2) displays a well-known metal-insulator (MI) transition at atemperature of 68oC. The MI transition in VO2 has been studied extensively by a widerange of optical, electrical, structural, and magnetic measurements. In spite of this there isstill some controversy about the nature...... temperature hysteresis of the far-infrared transmission through thethin film with temperature. Interestingly the temperature-dependent transmissionamplitude shows a markedly different switching temperature than the transmission phase.This effect has not been observed before, and is very important...

  7. Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices.

    Science.gov (United States)

    Taha, Mohammad; Walia, Sumeet; Ahmed, Taimur; Headland, Daniel; Withayachumnankul, Withawat; Sriram, Sharath; Bhaskaran, Madhu

    2017-12-20

    Vanadium has 11 oxide phases, with the binary VO 2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator-to-metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO 2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO 2 synthesis have also been standing issues in VO 2 fabrication. Here, we address these major challenges in harnessing the functionality in VO 2 by demonstrating an approach that enables crystalline, switchable VO 2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO 2 on any substrate, thereby exploiting its untapped potential.

  8. Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

    International Nuclear Information System (INIS)

    Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    FeCo epitaxial films were prepared on MgO(111), SrTiO 3 (111), and Al 2 O 3 (0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110) bcc films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO 3 and Al 2 O 3 substrates include FeCo(111) bcc crystal in addition to the FeCo(110) bcc crystals with NW and KS relationships. The FeCo(111) bcc crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110) bcc and FeCo(111) bcc crystals formed on the insulating substrates are in agreement with those of the bulk Fe 50 Co 50 (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

  9. Thin-film morphology of inkjet-printed single-droplet organic transistors using polarized Raman spectroscopy: effect of blending TIPS-pentacene with insulating polymer.

    Science.gov (United States)

    James, David T; Kjellander, B K Charlotte; Smaal, Wiljan T T; Gelinck, Gerwin H; Combe, Craig; McCulloch, Iain; Wilson, Richard; Burroughes, Jeremy H; Bradley, Donal D C; Kim, Ji-Seon

    2011-12-27

    We report thin-film morphology studies of inkjet-printed single-droplet organic thin-film transistors (OTFTs) using angle-dependent polarized Raman spectroscopy. We show this to be an effective technique to determine the degree of molecular order as well as to spatially resolve the orientation of the conjugated backbones of the 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pentacene) molecules. The addition of an insulating polymer, polystyrene (PS), does not disrupt the π-π stacking of the TIPS-Pentacene molecules. Blending in fact improves the uniformity of the molecular morphology and the active layer coverage within the device and reduces the variation in molecular orientation between polycrystalline domains. For OTFT performance, blending enhances the saturation mobility from 0.22 ± 0.05 cm(2)/(V·s) (TIPS-Pentacene) to 0.72 ± 0.17 cm(2)/(V·s) (TIPS-Pentacene:PS) in addition to improving the quality of the interface between TIPS-Pentacene and the gate dielectric in the channel, resulting in threshold voltages of ∼0 V and steep subthreshold slopes.

  10. Metal-to-Insulator Transition in Anatase TiO2 Thin Films Induced by Growth Rate Modulation

    International Nuclear Information System (INIS)

    Tachikawa, Takashi

    2012-01-01

    We demonstrate control of the carrier density of single phase anatase TiO 2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO 2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.

  11. Metal-to-Insulator Transition in Anatase TiO2 Thin Films Induced by Growth Rate Modulation

    Energy Technology Data Exchange (ETDEWEB)

    Tachikawa, T; Minohara, M.; Nakanishi, Y.; Hikita, Y.; Yoshita, M.; Akiyama, H.; Bell, C.; Hwang, H.Y.

    2012-06-21

    We demonstrate control of the carrier density of single phase anatase TiO{sub 2} thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO{sub 2} samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.

  12. Interfacial phonon scattering and transmission loss in >1 μm thick silicon-on-insulator thin films

    Science.gov (United States)

    Jiang, Puqing; Lindsay, Lucas; Huang, Xi; Koh, Yee Kan

    2018-05-01

    Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. To better understand the interfacial scattering of phonons and to test the validity of Ziman's theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1-10 μm and a temperature range of 100-300 K. The Si /SiO2 interface roughness was determined to be 0.11 ±0.04 nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. We derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.

  13. Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

    International Nuclear Information System (INIS)

    Trinh, Thanh Thuy; Nguyen, Van Duy; Ryu, Kyungyul; Jang, Kyungsoo; Lee, Wonbeak; Baek, Seungshin; Raja, Jayapal; Yi, Junsin

    2011-01-01

    An amorphous InGaZnO film fabricated by radio frequency magnetron sputtering in only an Ar-reactive gas shows high conductivity, and a thin-film transistors (TFTs)-based IGZO active layer expresses a poor on/off current ratio with a high off current and high subthreshold swing (SS). This paper presents the post-annealing effects on IGZO thin films to compensate the oxygen deficiencies in films as well as on TFT devices to reduce the densities of the interface trap between the active layer and insulator. The ratio of oxygen vacancies over total of oxygen (O 2 /O tot ) in IGZO estimated by the XPS measurement shows that they significantly diminish from 24.75 to 17.68% when increasing the temperature treatment to 350 °C, which is related to the enhancement in resistivity of IGZO. The TFT characteristics of IGZO treated in air at 350 °C show a high I ON /I OFF ratio of ∼1.1 × 10 7 , a high field-effect mobility of 7.48 cm 2 V −1 s −1 , and a low SS of 0.41 V dec −1 . The objective of this paper is to achieve a successful reduction in the interface trap density, ΔD it , which has been reduced about 3.1 × 10 12 cm −2 eV −1 and 2.0 × 10 12 cm −2 eV −1 for the 350 and 200 °C treatment samples compared with the as-deposited one. The resistivity of the IGZO films can be adjusted to the appropriate value that can be used for TFT applications by controlling the treatment temperature

  14. Spin-orbit torque in a thin film of the topological insulator Bi2Se3: Crossover from the ballistic to diffusive regime

    Science.gov (United States)

    Ren, Y. J.; Deng, W. Y.; Geng, H.; Shen, R.; Shao, L. B.; Sheng, L.; Xing, D. Y.

    2017-12-01

    The spin-orbit torque provides an efficient method for switching the direction of a magnetization by using an electric field. Owing to the spin-orbit coupling, when an electric field is applied, a nonequilibrium spin density is generated, which exerts a torque on the local magnetization. Here, we investigate the spin-orbit torque in a thin film of topological insulator \\text{Bi}2\\text{Se}3 based upon a Boltzmann equation, with proper boundary conditions, which is applicable from the ballistic regime to the diffusive regime. It is shown that due to the spin-momentum interlocking of the electron surface states, the magnitude of the field-like torque is simply in linear proportion to the longitudinal electrical current. For a fixed electric field, the spin-orbit torque is proportional to the sample length in the ballistic limit, and saturates to a constant in the diffusive limit. The dependence of the torque on the magnetization direction and exchange coupling strength is also studied. Our theory may offer useful guidance for experimental investigations of the spin-orbit torque in finite-size systems.

  15. Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Wang, Shea-Jue; Hsia, Mao-Yuan; Lee, Win-Der; Huang, Bohr-Ran

    2017-01-01

    In this study, a proposed Microwave-Induction Heating (MIH) scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal below the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit) was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation (50 W). PMID:28773101

  16. Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol for the Gate Insulator of Pentacene-Based Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2017-07-01

    Full Text Available In this study, a proposed Microwave-Induction Heating (MIH scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO metal below the Poly(4-vinylphenol (PVP film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min and low-power microwave-irradiation (50 W.

  17. Heat insulation support device

    International Nuclear Information System (INIS)

    Takahashi, Hiroyuki; Koda, Tomokazu; Motojima, Osamu; Yamamoto, Junya.

    1994-01-01

    The device of the present invention comprises a plurality of heat insulation legs disposed in a circumferential direction. Each of the heat insulative support legs has a hollow shape, and comprises an outer column and an inner column as support structures having a heat insulative property (heat insulative structure), and a thermal anchor which absorbs compulsory displacement by a thin flat plate (displacement absorber). The outer column, the thermal anchor and the inner column are connected by a support so as to offset the positional change of objects to be supported due to shrinkage when they are shrunk. In addition, the portion between the superconductive coils as the objects to be supported and the inner column is connected by the support. The superconductive thermonuclear device is entirely contained in a heat insulative vacuum vessel, and the heat insulative support legs are disposed on a lower lid of the heat insulative vacuum vessel. With such a constitution, they are strengthened against lateral load and buckling, thereby enabling to reduce the amount of heat intrusion while keeping the compulsory displacement easy to be absorbed. (I.N.)

  18. Speed of thermal expansion of a long, thin insulating bar and the physical momentum of acoustic phonons

    International Nuclear Information System (INIS)

    Lee, Y C

    2008-01-01

    Thermal expansion is an everyday phenomenon. One would naturally be curious to see how fast the expansion proceeds. While the theory of thermal expansion in statistical thermal equilibrium is well known, the time-dependent process during thermal expansion is a more complex statistical dynamical problem. Contrary to intuitive expectations, it will be seen that the dynamical expansion process is generally different from the process of merely establishing temperature equilibration (thermal-kinetic equilibrium) because two vastly disparate timescales are at work. It will be shown that the finite speed of thermal expansion hinges upon a recently derived result that an acoustic phonon of wavevector q-vector≠0 does carry a finite physical momentum; it arises from anharmonicity, provided translational symmetry is broken. While the eventual mathematical formulation seems pedestrian, it is arrived at after several layers of physical thinking. Our final result shows that the time required for thermal expansion of a thin bar of length L by ΔL due to a given temperature increase ΔT is given by Δt L ∝ (L/ΔL) (L/c s ), where c s is the speed of sound. Its physical origin as well as its classical and quantum limits are fully discussed

  19. Thermal insulation

    International Nuclear Information System (INIS)

    Aspden, G.J.; Howard, R.S.

    1988-01-01

    The patent concerns high temperature thermal insulation of large vessels, such as the primary vessel of a liquid metal cooled nuclear reactor. The thermal insulation consists of multilayered thermal insulation modules, and each module comprises a number of metal sheet layers sandwiched between a back and front plate. The layers are linked together by straps and clips to control the thickness of the module. (U.K.)

  20. Cellulose Insulation

    Science.gov (United States)

    1980-01-01

    Fire retardant cellulose insulation is produced by shredding old newspapers and treating them with a combination of chemicals. Insulating material is blown into walls and attics to form a fiber layer which blocks the flow of air. All-Weather Insulation's founders asked NASA/UK-TAP to help. They wanted to know what chemicals added to newspaper would produce an insulating material capable of meeting federal specifications. TAP researched the query and furnished extensive information. The information contributed to successful development of the product and helped launch a small business enterprise which is now growing rapidly.

  1. Insulated pipe clamp design

    International Nuclear Information System (INIS)

    Anderson, M.J.; Hyde, L.L.; Wagner, S.E.; Severud, L.K.

    1980-01-01

    Thin wall large diameter piping for breeder reactor plants can be subjected to significant thermal shocks during reactor scrams and other upset events. On the Fast Flux Test Facility, the addition of thick clamps directly on the piping was undesired because the differential metal temperatures between the pipe wall and the clamp could have significantly reduced the pipe thermal fatigue life cycle capabilities. Accordingly, an insulated pipe clamp design concept was developed. 5 refs

  2. Thermal insulation

    International Nuclear Information System (INIS)

    Pinsky, G.P.

    1977-01-01

    Thermal insulation for vessels and piping within the reactor containment area of nuclear power plants is disclosed. The thermal insulation of this invention can be readily removed and replaced from the vessels and piping for inservice inspection, can withstand repeated wettings and dryings, and can resist high temperatures for long periods of time. 4 claims, 3 figures

  3. Surface modification of polyimide gate insulators for solution-processed 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) thin-film transistors.

    Science.gov (United States)

    Jang, Kwang-Suk; Kim, Won Soo; Won, Jong-Myung; Kim, Yun-Ho; Myung, Sung; Ka, Jae-Won; Kim, Jinsoo; Ahn, Taek; Yi, Mi Hye

    2013-01-21

    The surface property of a polyimide gate insulator was successfully modified with an n-octadecyl side-chain. Alkyl chain-grafted poly(amic acid), the polyimide precursor, was synthesized using the diamine comonomer with an alkyl side-chain. By adding a base catalyst to the poly(amic acid) coating solution, the imidization temperature of the spin-coated film could be reduced to 200 °C. The 350 nm-thick polyimide film had a dielectric constant of 3.3 at 10 kHz and a leakage current density of less than 8.7 × 10(-10) A cm(-2), while biased from 0 to 100 V. To investigate the potential of the alkyl chain-grafted polyimide film as a gate insulator for solution-processed organic thin-film transistors (TFTs), we fabricated C(10)-BTBT TFTs. C(10)-BTBT was deposited on the alkyl chain-grafted polyimide gate insulator by spin-coating, forming a well-ordered crystal structure. The field-effect mobility and the on/off current ratio of the TFT device were measured to be 0.20-0.56 cm(2) V(-1) s(-1) and >10(5), respectively.

  4. Thin-film morphology of inkjet-printed single-droplet organic transistors using polarized Raman spectroscopy: effect of blending TIPS-pentacene with insulating polymer

    NARCIS (Netherlands)

    James, D.T.; Kjellander, B.K.C.; Smaal, W.T.T.; Gelinck, G.H.; Combe, C.; McCulloch, I.; Wilson, R.; Burroughes, J.H.; Bradley, D.D.C.; Kim, J.S.

    2011-01-01

    We report thin-film morphology studies of inkjet-printed single-droplet organic thin-film transistors (OTFTs) using angle-dependent polarized Raman spectroscopy. We show this to be an effective technique to determine the degree of molecular order as well as to spatially resolve the orientation of

  5. Compact vacuum insulation embodiments

    Science.gov (United States)

    Benson, D.K.; Potter, T.F.

    1992-04-28

    An ultra-thin compact vacuum insulation panel is comprised of two hard, but bendable metal wall sheets closely spaced apart from each other and welded around the edges to enclose a vacuum chamber. Glass or ceramic spacers hold the wall sheets apart. The spacers can be discrete spherical beads or monolithic sheets of glass or ceramic webs with nodules protruding therefrom to form essentially point' or line' contacts with the metal wall sheets. In the case of monolithic spacers that form line' contacts, two such spacers with the line contacts running perpendicular to each other form effectively point' contacts at the intersections. Corrugations accommodate bending and expansion, tubular insulated pipes and conduits, and preferred applications are also included. 26 figs.

  6. Compact vacuum insulation

    Science.gov (United States)

    Benson, D.K.; Potter, T.F.

    1993-01-05

    An ultra-thin compact vacuum insulation panel is comprised of two hard, but bendable metal wall sheets closely spaced apart from each other and welded around the edges to enclose a vacuum chamber. Glass or ceramic spacers hold the wall sheets apart. The spacers can be discrete spherical beads or monolithic sheets of glass or ceramic webs with nodules protruding therefrom to form essentially point'' or line'' contacts with the metal wall sheets. In the case of monolithic spacers that form line'' contacts, two such spacers with the line contacts running perpendicular to each other form effectively point'' contacts at the intersections. Corrugations accommodate bending and expansion, tubular insulated pipes and conduits, and preferred applications are also included.

  7. Insulated pipe clamp design

    International Nuclear Information System (INIS)

    Anderson, M.J.; Hyde, L.L.; Wagner, S.E.; Severud, L.K.

    1980-01-01

    Thin wall large diameter piping for breeder reactor plants can be subjected to significant thermal shocks during reactor scrams and other upset events. On the Fast Flux Test Facility, the addition of thick clamps directly on the piping was undesired because the differential metal temperatures between the pipe wall and the clamp could have significantly reduced the pipe thermal fatigue life cycle capabilities. Accordingly, an insulated pipe clamp design concept was developed. The design considerations and methods along with the development tests are presented. Special considerations to guard against adverse cracking of the insulation material, to maintain the clamp-pipe stiffness desired during a seismic event, to minimize clamp restraint on the pipe during normal pipe heatup, and to resist clamp rotation or spinning on the pipe are emphasized

  8. Thermal insulation

    International Nuclear Information System (INIS)

    Durston, J.G.; Birch, W.; Facer, R.I.; Stuart, R.A.

    1977-01-01

    Reference is made to liquid metal cooled nuclear reactors. In the arrangement described the reactor vessel is clad with thermal insulation comprising a layer of insulating blocks spaced from the wall and from each other; each block is rigidly secured to the wall, and the interspaces are substantially closed against convectional flow of liquid by resilient closure members. A membrane covering is provided for the layer of blocks, with venting means to allow liquid from the reactor vessel to penetrate between the covering and the layer of blocks. The membrane covering may comprise a stainless steel sheet ribbed in orthogonal pattern to give flexibility for the accommodation of thermal strain. The insulating blocks may be comprised of stainless steel or cellular or porous material and may be hollow shells containing ceramic material or gas fillings. (U.K.)

  9. Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing.

    Science.gov (United States)

    Pan, Tung-Ming; Lin, Jian-Chi; Wu, Min-Hsien; Lai, Chao-Sung

    2009-05-15

    For high sensitive pH sensing, an electrolyte-insulator-semiconductor (EIS) device with Nd(2)TiO(5) thin layers fabricated on Si substrates by means of reactive sputtering and the subsequent post-deposition annealing (PDA) treatment was proposed. In this work, the effect of thermal annealing (600, 700, 800, and 900 degrees C) on the structural characteristics of Nd(2)TiO(5) thin layer was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. The observed structural properties were then correlated with the resulting pH sensing performances. For enzymatic field-effect-transistors-based urea biosensing, a hybrid configuration of the proposed Nd(2)TiO(5) thin layer with urease-immobilized alginate film attached was established. Within the experimental conditions investigated, the EIS device with the Nd(2)TiO(5) thin layer annealed at 800 degrees C exhibited a higher pH detection sensitivity of 57.2 mV/pH, a lower hysteresis voltage of 2.33 mV, and a lower drift rate of 1.80 mV/h compared to those at other annealing temperatures. These results are attributed to the formation of a thinner low-k interfacial layer at the oxide/Si interface and the higher surface roughness occurred at this annealing temperature. Furthermore, the presented urea biosensor was also proved to be able to detect urea with good linearity (R(2)=0.99) and reasonable sensitivity of 9.52 mV/mM in the urea concentration range of 3-40 mM. As a whole, the present work has provided some fundamental data for the use of Nd(2)TiO(5) thin layer for EIS-based pH detection and the extended application for biosensing.

  10. Topological insulators

    CERN Document Server

    Franz, Marcel

    2013-01-01

    Topological Insulators, volume six in the Contemporary Concepts of Condensed Matter Series, describes the recent revolution in condensed matter physics that occurred in our understanding of crystalline solids. The book chronicles the work done worldwide that led to these discoveries and provides the reader with a comprehensive overview of the field. Starting in 2004, theorists began to explore the effect of topology on the physics of band insulators, a field previously considered well understood. However, the inclusion of topology brings key new elements into this old field. Whereas it was

  11. Imaging Nanometer Phase Coexistence at Defects During the Insulator-Metal Phase Transformation in VO2 Thin Films by Resonant Soft X-ray Holography.

    Science.gov (United States)

    Vidas, Luciana; Günther, Christian M; Miller, Timothy A; Pfau, Bastian; Perez-Salinas, Daniel; Martínez, Elías; Schneider, Michael; Gührs, Erik; Gargiani, Pierluigi; Valvidares, Manuel; Marvel, Robert E; Hallman, Kent A; Haglund, Richard F; Eisebitt, Stefan; Wall, Simon

    2018-05-18

    We use resonant soft X-ray holography to image the insulator-metal phase transition in vanadium dioxide with element and polarization specificity and nanometer spatial resolution. We observe that nanoscale inhomogeneity in the film results in spatial-dependent transition pathways between the insulating and metallic states. Additional nanoscale phases form in the vicinity of defects which are not apparent in the initial or final states of the system, which would be missed in area-integrated X-ray absorption measurements. These intermediate phases are vital to understand the phase transition in VO 2 , and our results demonstrate how resonant imaging can be used to understand the electronic properties of phase-separated correlated materials obtained by X-ray absorption.

  12. The inaccuracy of heat transfer characteristics for non-insulated and insulated spherical containers neglecting the influence of heat radiation

    International Nuclear Information System (INIS)

    Wong, King-Leung; Salazar, Jose Luis Leon; Prasad, Leo; Chen, Wen-Lih

    2011-01-01

    In this investigation, the differences of heat transfer characteristics for insulated and non-insulated spherical containers between considering and neglecting the influence of heat radiation are studied by the simulations in some practical situations. It is found that the heat radiation effect cannot be ignored in conditions of low ambient convection heat coefficients (such ambient air) and high surface emissivities, especially for the non-insulated and thin insulated cases. In most practical situations when ambient temperature is different from surroundings temperature and the emissivity of insulation surface is different from that of metal wall surface, neglecting heat radiation will result in inaccurate insulation effect and heat transfer errors even with very thick insulation. However, the insulation effect considering heat radiation will only increase a very small amount after some dimensionless insulated thickness (such insulation thickness/radius ≥0.2 in this study), thus such dimensionless insulated thickness can be used as the optimum thickness in practical applications. Meanwhile, wrapping a material with low surface emissivity (such as aluminum foil) around the oxidized metal wall or insulation layer (always with high surface emissivity) can achieve very good insulated effect for the non-insulated or thin insulated containers.

  13. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-01-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

  14. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  15. Test for the presence of long-ranged Coulomb interactions in thin TiN films near the superconductor-insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Kronfeldner, Klaus; Strunk, Christoph [Institute for Experimental and Applied Physics, University of Regensburg (Germany); Baturina, Tatyana [A.V. Rzhanov Institute of Semiconductor Physics, SB RAS (Russian Federation)

    2016-07-01

    We have measured the conductance of square shaped TiN films on the superconducting and the insulating side of the superconductor/insulator transition. The conductance shows thermally activated behaviour with an activation energy k{sub B}T{sub 0}(L) ∝ lnL, with L being the lateral size of the squares. Such behavior is consistent with 2D long-ranged Coulomb interactions with a large electrostatic screening length Λ ≅ 200 μm. To independently test whether long ranged Coulomb interactions can be responsible for the observed size dependence we compare R(T,B) of a large TiN film in the critical region with and without a screening Pd layer in a distance t ∼ 60 nm to the TiN film. The screening Pd-layer is expected to reduce the activation energy from ∝ ln [min(L,Λ)] to ∝ ln(t) and the thermally activated resistance in films with L >or similar Λ by the large number Λ/t ≅ 3000. In contrast, our experiment showed no significant reduction of R(T) and T{sub 0}. This suggests that the measured size dependent conductance of our TiN film is not related to long-ranged Coulomb interactions.

  16. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

    International Nuclear Information System (INIS)

    Wang Zheli; Zhou Jianjun; Kong Yuechan; Kong Cen; Dong Xun; Yang Yang; Chen Tangsheng

    2015-01-01

    A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al 0.3 Ga 0.7 N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al 2 O 3 ) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al 2 O 3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length (L G ) of 1 μm showed a maximum drain current density (I DS ) of 657 mA/mm, a maximum extrinsic transconductance (g m ) of 187 mS/mm and a threshold voltage (V th ) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al 2 O 3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high V th and I DS . (paper)

  17. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Tao; Qi, Zeming, E-mail: zmqi@ustc.edu.cn; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Wang, Yu [Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Science, Shanghai 201204 (China); Liu, Miao [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  18. Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions

    Science.gov (United States)

    Na, So-Yeong; Kim, Yeo-Myeong; Yoon, Da-Jeong; Yoon, Sung-Min

    2017-12-01

    The effects of atomic layer deposition (ALD) conditions for the HfO2 gate insulators (GI) on the device characteristics of the InGaZnO (IGZO) thin film transistors (TFTs) were investigated when the ALD temperature and Hf precursor purge time were varied to 200, 225, and 250 °C, and 15 and 30 s, respectively. The HfO2 thin films showed low leakage current density of 10-8 A cm-2, high dielectric constant of over 20, and smooth surface roughness at all ALD conditions. The IGZO TFTs using the HfO2 GIs showed good device characteristics such as a saturation mobility as high as 11 cm2 V-1 s-1, a subthreshold swing as low as 0.10 V/dec, and all the devices could be operated at a gate voltage as low as  ±3 V. While there were no marked differences in transfer characteristics and PBS stabilities among the fabricated devices, the NBIS instabilities could be improved by increasing the ALD temperature for the formation of HfO2 GIs by reducing the oxygen vacancies within the IGZO channel.

  19. Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties

    Science.gov (United States)

    Elovaara, Tomi; Huhtinen, Hannu; Majumdar, Sayani; Paturi, Petriina

    2016-09-01

    We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 109% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential.

  20. Frontier molecular orbitals of a single molecule adsorbed on thin insulating films supported by a metal substrate: electron and hole attachment energies.

    Science.gov (United States)

    Scivetti, Iván; Persson, Mats

    2017-09-06

    We present calculations of vertical electron and hole attachment energies to the frontier orbitals of a pentacene molecule absorbed on multi-layer sodium chloride films supported by a copper substrate using a simplified density functional theory (DFT) method. The adsorbate and the film are treated fully within DFT, whereas the metal is treated implicitly by a perfect conductor model. We find that the computed energy gap between the highest and lowest unoccupied molecular orbitals-HOMO and LUMO -from the vertical attachment energies increases with the thickness of the insulating film, in agreement with experiments. This increase of the gap can be rationalised in a simple dielectric model with parameters determined from DFT calculations and is found to be dominated by the image interaction with the metal. We find, however, that this simplified model overestimates the downward shift of the energy gap in the limit of an infinitely thick film.

  1. Tank Insulation

    Science.gov (United States)

    1979-01-01

    For NASA's Apollo program, McDonnell Douglas Astronautics Company, Huntington Beach, California, developed and built the S-IVB, uppermost stage of the three-stage Saturn V moonbooster. An important part of the development task was fabrication of a tank to contain liquid hydrogen fuel for the stage's rocket engine. The liquid hydrogen had to be contained at the supercold temperature of 423 degrees below zero Fahrenheit. The tank had to be perfectly insulated to keep engine or solar heat from reaching the fuel; if the hydrogen were permitted to warm up, it would have boiled off, or converted to gaseous form, reducing the amount of fuel available to the engine. McDonnell Douglas' answer was a supereffective insulation called 3D, which consisted of a one-inch thickness of polyurethane foam reinforced in three dimensions with fiberglass threads. Over a 13-year development and construction period, the company built 30 tanks and never experienced a failure. Now, after years of additional development, an advanced version of 3D is finding application as part of a containment system for transporting Liquefied Natural Gas (LNG) by ship.

  2. Thin-Film Power Transformers

    Science.gov (United States)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  3. Insulating nanoparticles on YBa2Cu3O7-δ thin films revealed by comparison of atomic force and scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Thomson, R.E.; Moreland, J.; Missert, N.; Rudman, D.A.; Sanders, S.C.; Cole, B.F.

    1993-01-01

    The surface topography of YBa 2 Cu 3 O 7-δ thin films has been studied with both atomic force microscopy (AFM) and scanning tunneling microscopy (STM). The AFM images reveal a high density of small distinct nanoparticles, 10--50 nm across and 5--20 nm high, which do not appear in STM images of the same samples. In addition, we have shown that scanning the STM tip across the surface breaks off these particles and moves them to the edge of the scanned area, where they can later be imaged with the AFM

  4. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.

    Science.gov (United States)

    Yu, Jinling; Zeng, Xiaolin; Cheng, Shuying; Chen, Yonghai; Liu, Yu; Lai, Yunfeng; Zheng, Qiao; Ren, Jun

    2016-12-01

    The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.

  5. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  6. Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

    Directory of Open Access Journals (Sweden)

    Shangxiong Zhou

    2018-05-01

    Full Text Available In this paper, a high-k metal-oxide film (ZrO2 was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD, X-ray reflectivity (XRR and atomic force microscopy (AFM. Furthermore, indium–gallium–zinc oxide thin-film transistors (IGZO-TFTs with high-k ZrO2 dielectric layers were demonstrated, and the electrical performance and bias stability were investigated in detail. By spin-coating 0.3 M precursor six times, a dense ZrO2 film, with smoother surface and fewer defects, was fabricated. The TFT devices with optimal ZrO2 dielectric exhibit a saturation mobility up to 12.7 cm2 V−1 s−1, and an on/off ratio as high as 7.6 × 105. The offset of the threshold voltage was less than 0.6 V under positive and negative bias stress for 3600 s.

  7. Molecular dewetting on insulators

    International Nuclear Information System (INIS)

    Burke, S A; Topple, J M; Gruetter, P

    2009-01-01

    Recent attention given to the growth and morphology of organic thin films with regard to organic electronics has led to the observation of dewetting (a transition from layer(s) to islands) of molecular deposits in many of these systems. Dewetting is a much studied phenomenon in the formation of polymer and liquid films, but its observation in thin films of the 'small' molecules typical of organic electronics requires additional consideration of the structure of the interface between the molecular film and the substrate. This review covers some key concepts related to dewetting and molecular film growth. In particular, the origins of different growth modes and the thickness dependent interactions which give rise to dewetting are discussed in terms of surface energies and the disjoining pressure. Characteristics of molecular systems which may lead to these conditions, including the formation of metastable interface structures and commensurate-incommensurate phase transitions, are also discussed. Brief descriptions of some experimental techniques which have been used to study molecular dewetting are given as well. Examples of molecule-on-insulator systems which undergo dewetting are described in some detail, specifically perylene derivatives on alkali halides, C 60 on alkali halides, and the technologically important system of pentacene on SiO 2 . These examples point to some possible predicting factors for the occurrence of dewetting, most importantly the formation of an interface layer which differs from the bulk crystal structure. (topical review)

  8. Molecular dewetting on insulators.

    Science.gov (United States)

    Burke, S A; Topple, J M; Grütter, P

    2009-10-21

    Recent attention given to the growth and morphology of organic thin films with regard to organic electronics has led to the observation of dewetting (a transition from layer(s) to islands) of molecular deposits in many of these systems. Dewetting is a much studied phenomenon in the formation of polymer and liquid films, but its observation in thin films of the 'small' molecules typical of organic electronics requires additional consideration of the structure of the interface between the molecular film and the substrate. This review covers some key concepts related to dewetting and molecular film growth. In particular, the origins of different growth modes and the thickness dependent interactions which give rise to dewetting are discussed in terms of surface energies and the disjoining pressure. Characteristics of molecular systems which may lead to these conditions, including the formation of metastable interface structures and commensurate-incommensurate phase transitions, are also discussed. Brief descriptions of some experimental techniques which have been used to study molecular dewetting are given as well. Examples of molecule-on-insulator systems which undergo dewetting are described in some detail, specifically perylene derivatives on alkali halides, C(60) on alkali halides, and the technologically important system of pentacene on SiO(2). These examples point to some possible predicting factors for the occurrence of dewetting, most importantly the formation of an interface layer which differs from the bulk crystal structure.

  9. Role of defects in the carrier-tunable topological-insulator (Bi1 -xSbx )2Te3 thin films

    Science.gov (United States)

    Scipioni, Kane L.; Wang, Zhenyu; Maximenko, Yulia; Katmis, Ferhat; Steiner, Charlie; Madhavan, Vidya

    2018-03-01

    Alloys of Bi2Te3 and Sb2Te3[(Bi1-xSbx) 2Te3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb) 2Te3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x ˜0.7 , but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n -type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x ˜0.7 sample shows great similarity to pristine Bi2Te3 . This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state

  10. Magnetically insulated transmission line oscillator

    Science.gov (United States)

    Bacon, L.D.; Ballard, W.P.; Clark, M.C.; Marder, B.M.

    1987-05-19

    A magnetically insulated transmission line oscillator employs self-generated magnetic fields to generate microwave energy. An anode of the oscillator includes slow-wave structures which are formed of a plurality of thin conductive vanes defining cavities therebetween, and a gap is formed between the anode and a cathode of the oscillator. In response to a pulsed voltage applied to the anode and cathode, self-generated magnetic fields are produced in a cross-field orientation with respect to the orientation of the electric field between the anode and the cathode. The cross-field magnetic fields insulate the flow of electrons in the gap and confine the flow of electrons within the gap. 11 figs.

  11. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Choi, Kyung Cheol, E-mail: shkp@kaist.ac.kr, E-mail: kyungcc@kaist.ac.kr [School of Electrical Engineering, KAIST, Daejeon 34141 (Korea, Republic of); Park, Sang-Hee Ko, E-mail: shkp@kaist.ac.kr, E-mail: kyungcc@kaist.ac.kr [Department of Material Science and Engineering, KAIST, Daejeon 34141 (Korea, Republic of)

    2016-05-02

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al{sub 2}O{sub 3}, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV{sub th}) was 0 V even after a PBS time (t{sub stress}) of 3000 s under a gate voltage (V{sub G}) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV{sub th} value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV{sub th} values resulting from PBS quantitatively, the average oxide charge trap density (N{sub T}) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N{sub T} resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N{sub T} near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  12. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Choi, Kyung Cheol; Park, Sang-Hee Ko

    2016-01-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al_2O_3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV_t_h) was 0 V even after a PBS time (t_s_t_r_e_s_s) of 3000 s under a gate voltage (V_G) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV_t_h value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV_t_h values resulting from PBS quantitatively, the average oxide charge trap density (N_T) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N_T resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N_T near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  13. Economically optimal thermal insulation

    Energy Technology Data Exchange (ETDEWEB)

    Berber, J.

    1978-10-01

    Exemplary calculations to show that exact adherence to the demands of the thermal insulation ordinance does not lead to an optimal solution with regard to economics. This is independent of the mode of financing. Optimal thermal insulation exceeds the values given in the thermal insulation ordinance.

  14. Thermal insulating panel

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, J.T.

    1985-09-11

    A panel of thermal insulation material has at least one main portion which comprises a dry particulate insulation material compressed within a porous envelope so that it is rigid or substantially rigid and at least one auxiliary portion which is secured to and extends along at least one of the edges of the main portions. The auxiliary portions comprise a substantially uncompressed dry particulate insulation material contained within an envelope. The insulation material of the auxiliary portion may be the same as or may be different from the insulation material of the main portion. The envelope of the auxiliary portion may be made of a porous or a non-porous material. (author).

  15. Load responsive multilayer insulation performance testing

    International Nuclear Information System (INIS)

    Dye, S.; Kopelove, A.; Mills, G. L.

    2014-01-01

    Cryogenic insulation designed to operate at various pressures from one atmosphere to vacuum, with high thermal performance and light weight, is needed for cryogenically fueled space launch vehicles and aircraft. Multilayer insulation (MLI) performs well in a high vacuum, but the required vacuum shell for use in the atmosphere is heavy. Spray-on foam insulation (SOFI) is often used in these systems because of its light weight, but can have a higher heat flux than desired. We report on the continued development of Load Responsive Multilayer Insulation (LRMLI), an advanced thermal insulation system that uses dynamic beam discrete spacers that provide high thermal performance both in atmosphere and vacuum. LRMLI consists of layers of thermal radiation barriers separated and supported by micromolded polymer spacers. The spacers have low thermal conductance, and self-support a thin, lightweight vacuum shell that provides internal high vacuum in the insulation. The dynamic load responsive spacers compress to support the external load of a vacuum shell in one atmosphere, and decompress under reduced atmospheric pressure for lower heat leak. Structural load testing was performed on the spacers with various configurations. LRMLI was installed on a 400 liter tank and boil off testing with liquid nitrogen performed at various chamber pressures from one atmosphere to high vacuum. Testing was also performed with an MLI blanket on the outside of the LRMLI

  16. Load responsive multilayer insulation performance testing

    Energy Technology Data Exchange (ETDEWEB)

    Dye, S.; Kopelove, A. [Quest Thermal Group, 6452 Fig Street Suite A, Arvada, CO 80004 (United States); Mills, G. L. [Ball Aerospace and Technologies Corp, 1600 Commerce Street, Boulder, CO 80301 (United States)

    2014-01-29

    Cryogenic insulation designed to operate at various pressures from one atmosphere to vacuum, with high thermal performance and light weight, is needed for cryogenically fueled space launch vehicles and aircraft. Multilayer insulation (MLI) performs well in a high vacuum, but the required vacuum shell for use in the atmosphere is heavy. Spray-on foam insulation (SOFI) is often used in these systems because of its light weight, but can have a higher heat flux than desired. We report on the continued development of Load Responsive Multilayer Insulation (LRMLI), an advanced thermal insulation system that uses dynamic beam discrete spacers that provide high thermal performance both in atmosphere and vacuum. LRMLI consists of layers of thermal radiation barriers separated and supported by micromolded polymer spacers. The spacers have low thermal conductance, and self-support a thin, lightweight vacuum shell that provides internal high vacuum in the insulation. The dynamic load responsive spacers compress to support the external load of a vacuum shell in one atmosphere, and decompress under reduced atmospheric pressure for lower heat leak. Structural load testing was performed on the spacers with various configurations. LRMLI was installed on a 400 liter tank and boil off testing with liquid nitrogen performed at various chamber pressures from one atmosphere to high vacuum. Testing was also performed with an MLI blanket on the outside of the LRMLI.

  17. Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

    Science.gov (United States)

    Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

    2013-03-01

    By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

  18. Panels of microporous insulation

    Energy Technology Data Exchange (ETDEWEB)

    McWilliams, J.A.; Morgan, D.E.; Jackson, J.D.J.

    1990-08-07

    Microporous thermal insulation materials have a lattice structure in which the average interstitial dimension is less than the mean free path of the molecules of air or other gas in which the material is arranged. This results in a heat flow which is less than that attributable to the molecular heat diffusion of the gas. According to this invention, a method is provided for manufacturing panels of microporous thermal insulation, in particular such panels in which the insulation material is bonded to a substrate. The method comprises the steps of applying a film of polyvinyl acetate emulsion to a non-porous substrate, and compacting powdery microporous thermal insulation material against the film so as to cause the consolidated insulation material to bond to the substrate and form a panel. The polyvinyl acetate may be applied by brushing or spraying, and is preferably allowed to dry prior to compacting the insulation material. 1 fig.

  19. Wall insulation system

    Energy Technology Data Exchange (ETDEWEB)

    Kostek, P.T.

    1987-08-11

    In a channel specially designed to fasten semi-rigid mineral fibre insulation to masonry walls, it is known to be constructed from 20 gauge galvanized steel or other suitable material. The channel is designed to have pre-punched holes along its length for fastening of the channel to the drywall screw. The unique feature of the channel is the teeth running along its length which are pressed into the surface of the butted together sections of the insulation providing a strong grip between the two adjacent pieces of insulation. Of prime importance to the success of this system is the recent technological advancements of the mineral fibre itself which allow the teeth of the channel to engage the insulation fully and hold without mechanical support, rather than be repelled or pushed back by the inherent nature of the insulation material. After the insulation is secured to the masonry wall by concrete nail fastening systems, the drywall is screwed to the channel.

  20. Translucent insulating building envelope

    DEFF Research Database (Denmark)

    Rahbek, Jens Eg

    1997-01-01

    A new type of translucent insulating material has been tested. This material is made of Celulose-Acetat and have a honey-comb structure. The material has a high solar transmittance and is highly insulating. The material is relatively cheap to produce. Danish Title: Translucent isolerende klimaskærm....

  1. Sound Insulation between Dwellings

    DEFF Research Database (Denmark)

    Rasmussen, Birgit

    2011-01-01

    Regulatory sound insulation requirements for dwellings exist in more than 30 countries in Europe. In some countries, requirements have existed since the 1950s. Findings from comparative studies show that sound insulation descriptors and requirements represent a high degree of diversity...... and initiate – where needed – improvement of sound insulation of new and existing dwellings in Europe to the benefit of the inhabitants and the society. A European COST Action TU0901 "Integrating and Harmonizing Sound Insulation Aspects in Sustainable Urban Housing Constructions", has been established and runs...... 2009-2013. The main objectives of TU0901 are to prepare proposals for harmonized sound insulation descriptors and for a European sound classification scheme with a number of quality classes for dwellings. Findings from the studies provide input for the discussions in COST TU0901. Data collected from 24...

  2. Limiting oxygen concentration for extinction of upward spreading flames over inclined thin polyethylene-insulated NiCr electrical wires with opposed-flow under normal- and micro-gravity

    KAUST Repository

    Hu, Longhua; Lu, Yong; Yoshioka, Kosuke; Zhang, Yangshu; Fernandez-Pello, Carlos; Chung, Suk-Ho; Fujita, Osamu

    2016-01-01

    . The experiments reported here used polyethylene (PE)-insulated (thickness of 0.15 mm) Nichrome (NiCr)-core (diameter of 0.5 mm) electrical wires. Limiting oxygen concentrations (LOC) at extinction were measured for upward spreading flame at various forced opposed-flow

  3. Vacuum foil insulation system

    International Nuclear Information System (INIS)

    Hanson, J.P.; Sabolcik, R.E.; Svedberg, R.C.

    1976-01-01

    In a multifoil thermal insulation package having a plurality of concentric cylindrical cups, means are provided for reducing heat loss from the penetration region which extends through the cups. At least one cup includes an integral skirt extending from one end of the cup to intersection with the penetration means. Assembly of the insulation package with the skirted cup is facilitated by splitting the cup to allow it to be opened up and fitted around the other cups during assembly. The insulation is for an implantable nuclear powered artificial heart

  4. Cooper Pairs in Insulators?

    International Nuclear Information System (INIS)

    Valles, James

    2008-01-01

    Nearly 50 years elapsed between the discovery of superconductivity and the emergence of the microscopic theory describing this zero resistance state. The explanation required a novel phase of matter in which conduction electrons joined in weakly bound pairs and condensed with other pairs into a single quantum state. Surprisingly, this Cooper pair formation has also been invoked to account for recently uncovered high-resistance or insulating phases of matter. To address this possibility, we have used nanotechnology to create an insulating system that we can probe directly for Cooper pairs. I will present the evidence that Cooper pairs exist and dominate the electrical transport in these insulators and I will discuss how these findings provide new insight into superconductor to insulator quantum phase transitions.

  5. Gas insulated substations

    CERN Document Server

    2014-01-01

    This book provides an overview on the particular development steps of gas insulated high-voltage switchgear, and is based on the information given with the editor's tutorial. The theory is kept low only as much as it is needed to understand gas insulated technology, with the main focus of the book being on delivering practical application knowledge. It discusses some introductory and advanced aspects in the meaning of applications. The start of the book presents the theory of Gas Insulated Technology, and outlines reliability, design, safety, grounding and bonding, and factors for choosing GIS. The third chapter presents the technology, covering the following in detail: manufacturing, specification, instrument transformers, Gas Insulated Bus, and the assembly process. Next, the book goes into control and monitoring, which covers local control cabinet, bay controller, control schemes, and digital communication. Testing is explained in the middle of the book before installation and energization. Importantly, ...

  6. Wrapped Multilayer Insulation

    Science.gov (United States)

    Dye, Scott A.

    2015-01-01

    New NASA vehicles, such as Earth Departure Stage (EDS), Orion, landers, and orbiting fuel depots, need improved cryogenic propellant transfer and storage for long-duration missions. Current cryogen feed line multilayer insulation (MLI) performance is 10 times worse per area than tank MLI insulation. During each launch, cryogenic piping loses approximately 150,000 gallons (equivalent to $300,000) in boil-off during transfer, chill down, and ground hold. Quest Product Development Corp., teaming with Ball Aerospace, developed an innovative advanced insulation system, Wrapped MLI (wMLI), to provide improved thermal insulation for cryogenic feed lines. wMLI is high-performance multilayer insulation designed for cryogenic piping. It uses Quest's innovative discrete-spacer technology to control layer spacing/ density and reduce heat leak. The Phase I project successfully designed, built, and tested a wMLI prototype with a measured heat leak 3.6X lower than spiral-wrapped conventional MLI widely used for piping insulation. A wMLI prototype had a heat leak of 7.3 W/m2, or 27 percent of the heat leak of conventional MLI (26.7 W/m2). The Phase II project is further developing wMLI technology with custom, molded polymer spacers and advancing the product toward commercialization via a rigorous testing program, including developing advanced vacuuminsulated pipe for ground support equipment.

  7. Survey of thermal insulation systems

    International Nuclear Information System (INIS)

    Kinoshita, Izumi

    1983-01-01

    Better thermal insulations have been developed to meet the growing demands of industry, and studies on thermal insulation at both high temperature and low temperature have been widely performed. The purpose of this survey is to summarize data on the performances and characteristics of thermal insulation materials and thermal insulation structures (for instance, gas cooled reactors, space vehicles and LNG storage tanks), and to discuss ravious problems regarding the design of thermal insulation structures of pool-type LMFBRs. (author)

  8. Use of Several Thermal Analysis Techniques to Study the Cracking of an Nitrile Butadiene Rubber (NBR) Insulator on the Booster Separation Motor (BSM) of the Space Shuttle

    Science.gov (United States)

    Wingard, Charles D.; Whitaker, Ann F. (Technical Monitor)

    2000-01-01

    Two different vendor rubber formulations have been used to produce the silica-filled NBR insulators for the BSM used on both of the Solid Rocket Boosters (SRBs) of the Space Shuttle. A number of lots of the BSM insulator in 1998-99 exhibited surface cracks and/or crazing. Each insulator is bonded to the BSM aluminum aft closure with an epoxy adhesive. Induced insulator stresses from adhesive cure are likely greatest where the insulator/adhesive contour is the greatest, thus showing increased insulator surface cracking in this area. Thermal analysis testing by Dynamic Mechanical Analyzer (DMA) and Thermomechanical Analysis (TMA) was performed on one each of the two vendor BSM insulators previously bonded that exhibited the surface cracking. The TMA data from the film/fiber technique yielded the most meaningful results, with thin insulator surface samples containing cracks having roughly the same modulus (stiffness) as thin insulator bulk samples just underneath.

  9. Tetradymites as thermoelectrics and topological insulators

    Science.gov (United States)

    Heremans, Joseph P.; Cava, Robert J.; Samarth, Nitin

    2017-10-01

    Tetradymites are M2X3 compounds — in which M is a group V metal, usually Bi or Sb, and X is a group VI anion, Te, Se or S — that crystallize in a rhombohedral structure. Bi2Se3, Bi2Te3 and Sb2Te3 are archetypical tetradymites. Other mixtures of M and X elements produce common variants, such as Bi2Te2Se. Because tetradymites are based on heavy p-block elements, strong spin-orbit coupling greatly influences their electronic properties, both on the surface and in the bulk. Their surface electronic states are a cornerstone of frontier work on topological insulators. The bulk energy bands are characterized by small energy gaps, high group velocities, small effective masses and band inversion near the centre of the Brillouin zone. These properties are favourable for high-efficiency thermoelectric materials but make it difficult to obtain an electrically insulating bulk, which is a requirement of topological insulators. This Review outlines recent progress made in bulk and thin-film tetradymite materials for the optimization of their properties both as thermoelectrics and as topological insulators.

  10. The model of metal-insulator phase transition in vanadium oxide

    International Nuclear Information System (INIS)

    Vikhnin, V.S.; Lysenko, S.; Rua, A.; Fernandez, F.; Liu, H.

    2005-01-01

    Thermally induced metal-insulator phase transitions (PT) in VO 2 thin films are studied theoretically and experimentally. The hysteresis phenomena in the region of the transition for different type thin films were investigated. The phenomenological model of the PT is suggested. The charge transfer-lattice instability in VO 2 metallic phase is considered as basis of the first order metal-insulator PT in VO 2 . The charge transfer is treated as an order parameter

  11. Individual Magnetic Molecules on Ultrathin Insulating Surfaces

    Science.gov (United States)

    El Hallak, Fadi; Warner, Ben; Hirjibehedin, Cyrus

    2012-02-01

    Single molecule magnets have attracted ample interest because of their exciting magnetic and quantum properties. Recent studies have demonstrated that some of these molecules can be evaporated on surfaces without losing their magnetic properties [M. Mannini et al., Nature 468, 417, (2010)]. This remarkable progress enhances the chances of real world applications for these molecules. We present STM imaging and spectroscopy data on iron phthalocyanine molecules deposited on Cu(100) and on a Cu2N ultrathin insulating surface. These molecules have been shown to display a large magnetic anisotropy on another thin insulating surface, oxidized Cu(110) [N. Tsukahara et al., Phys. Rev. Lett. 102, 167203 (2009)]. By using a combination of elastic and inelastic electron tunnelling spectroscopy, we investigate the binding of the molecules to the surface and the impact that the surface has on their electronic and magnetic properties.

  12. Tests on irradiated magnet-insulator materials

    International Nuclear Information System (INIS)

    Schmunk, R.E.; Miller, L.G.; Becker, H.

    1983-01-01

    Fusion-reactor coils, located in areas where they will be only partially shielded, must be fabricated from materials which are as resistant to radiation as possible. They will probably incorporate resistive conductors with either water or cryogenic cooling. Inorganic insulators have been recommended for these situations, but the possibility exists that some organic insulators may be usuable as well. Results were previously reported for irradiation and testing of three glass reinforced epoxies: G-7, G-10, and G-11. Thin disks of these materials, nominally 0.5 mm thick by 11.1 mm diameter, were tested in compressive fatigue, a configuration and loading which represents reasonably well the magnet environment. In that work G-10 was shown to withstand repeated loading to moderately high stress levels without failure, and the material survived better at liquid nitrogen temperature than at room temperature

  13. Nanoscale electron transport at the surface of a topological insulator

    Science.gov (United States)

    Bauer, Sebastian; Bobisch, Christian A.

    2016-04-01

    The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

  14. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    Science.gov (United States)

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-09-15

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

  15. Reusable Surface Insulation

    Science.gov (United States)

    1997-01-01

    Advanced Flexible Reusable Surface Insulation, developed by Ames Research Center, protects the Space Shuttle from the searing heat that engulfs it on reentry into the Earth's atmosphere. Initially integrated into the Space Shuttle by Rockwell International, production was transferred to Hi-Temp Insulation Inc. in 1974. Over the years, Hi-Temp has created many new technologies to meet the requirements of the Space Shuttle program. This expertise is also used commercially, including insulation blankets to cover aircrafts parts, fire barrier material to protect aircraft engine cowlings and aircraft rescue fire fighter suits. A Fire Protection Division has also been established, offering the first suit designed exclusively by and for aircraft rescue fire fighters. Hi-Temp is a supplier to the Los Angeles City Fire Department as well as other major U.S. civil and military fire departments.

  16. Insulators for fusion applications

    International Nuclear Information System (INIS)

    1987-04-01

    Design studies for fusion devices and reactors have become more detailed in recent years and with this has come a better understanding of requirements and operating conditions for insulators in these machines. Ceramic and organic insulators are widely used for many components of fusion devices and reactors namely: radio frequency (RF) energy injection systems (BeO, Al 2 O 3 , Mg Al 2 O 4 , Si 3 N 4 ); electrical insulation for the torus structure (SiC, Al 2 O 3 , MgO, Mg Al 2 O 4 , Si 4 Al 2 O 2 N 6 , Si 3 N 4 , Y 2 O 3 ); lightly-shielded magnetic coils (MgO, MgAl 2 O 4 ); the toroidal field coil (epoxies, polyimides), neutron shield (B 4 C, TiH 2 ); high efficiency electrical generation; as well as the generation of very high temperatures for high efficiency hydrogen production processes (ZrO 2 and Al 2 O 3 - mat, graphite and carbon - felt). Timely development of insulators for fusion applications is clearly necessary. Those materials to be used in fusion machines should show high resistance to radiation damage and maintain their structural integrity. Now the need is urgent for a variety of radiation resistant materials, but much effort in these areas is required for insulators to be considered seriously by the design community. This document contains 14 papers from an IAEA meeting. It was the objective of this meeting to identify existing problems in analysing various situations of applications and requirements of electrical insulators and ceramics in fusion and to recommend strategies and different stages of implementation. This meeting was endorsed by the International Fusion Research Council

  17. Electronic structure and insulating gap in epitaxial VO2 polymorphs

    Directory of Open Access Journals (Sweden)

    Shinbuhm Lee

    2015-12-01

    Full Text Available Determining the origin of the insulating gap in the monoclinic V O2(M1 is a long-standing issue. The difficulty of this study arises from the simultaneous occurrence of structural and electronic transitions upon thermal cycling. Here, we compare the electronic structure of the M1 phase with that of single crystalline insulating V O2(A and V O2(B thin films to better understand the insulating phase of VO2. As these A and B phases do not undergo a structural transition upon thermal cycling, we comparatively study the origin of the gap opening in the insulating VO2 phases. By x-ray absorption and optical spectroscopy, we find that the shift of unoccupied t2g orbitals away from the Fermi level is a common feature, which plays an important role for the insulating behavior in VO2 polymorphs. The distinct splitting of the half-filled t2g orbital is observed only in the M1 phase, widening the bandgap up to ∼0.6 eV. Our approach of comparing all three insulating VO2 phases provides insight into a better understanding of the electronic structure and the origin of the insulating gap in VO2.

  18. Insulated Wire Fed Floating Monopole Antenna for Coastal Monitoring

    Directory of Open Access Journals (Sweden)

    Z. M. Loni

    2018-04-01

    Full Text Available A thin, flexible, insulated wire submerged in seawater forms a coaxial cable which has attenuation at ultra-high frequency (UHF dependent on the operating frequency, the diameter of the insulating material and the diameter of the inner conductor. An extension of the insulated wire above the surface through a spherical float forms a monopole antenna. Attenuation through the wire depends on the conductivity and temperature of seawater. This paper reports the effect of electromagnetic (EM wave propagation at 433 MHz through insulated wires with different radii of the insulating material and inner conductor. The attenuation was calculated and measured in the range of 32-47 dB/m. The propagation from the monopole antenna to a fixed shore based receiver was measured to be approximately equal to 1 dB/m. The propagation measurements were compared with a shielded coaxial cable. Results show that the propagation range depends on the ratio of the insulation radius to conductor radius for insulated wire, however, a shielded coaxial cable showed no significant attenuation. The technique has applications in coastal wireless sensor networks where the water depth changes continually due to tide and wave motion.

  19. The inaccuracy of heat transfer characteristics of insulated and non-insulated circular duct while neglecting the influence of heat radiation

    International Nuclear Information System (INIS)

    Hsien, T.-L.; Wong, K.-L.; Yu, S.-J.

    2009-01-01

    The non-insulated and insulated ducts are commonly applied in the industries and various buildings, because the heat radiation equation contains the 4th order exponential of temperature which is very complicate in calculations. Most heat transfer experts recognized from their own experiences that the heat radiation effect can be ignored due to the small temperature difference between insulated and non-insulated surface and surroundings. This paper studies in detail to check the inaccuracies of heat transfer characteristics non-insulated and insulated duct by comparing the results between considering and neglecting heat radiation effect. It is found that neglecting the heat radiation effect is likely to produce large errors of non-insulated and thin-insulated ducts in situations of ambient air with low external convection heat coefficients and larger surface emissivity, especially while the ambient air temperature is different from that of surroundings and greater internal fluid convection coefficients. It is also found in this paper that using greater duct surface emissivity can greatly improve the heat exchanger effect and using smaller insulated surface emissivity can obtain better insulation.

  20. Insulation Reformulation Development

    Science.gov (United States)

    Chapman, Cynthia; Bray, Mark

    2015-01-01

    The current Space Launch System (SLS) internal solid rocket motor insulation, polybenzimidazole acrylonitrile butadiene rubber (PBI-NBR), is a new insulation that replaced asbestos-based insulations found in Space Shuttle heritage solid rocket boosters. PBI-NBR has some outstanding characteristics such as an excellent thermal erosion resistance, low thermal conductivity, and low density. PBI-NBR also has some significant challenges associated with its use: Air entrainment/entrapment during manufacture and lay-up/cure and low mechanical properties such as tensile strength, modulus, and fracture toughness. This technology development attempted to overcome these challenges by testing various reformulated versions of booster insulation. The results suggest the SLS program should continue to investigate material alternatives for potential block upgrades or use an entirely new, more advanced booster. The experimental design was composed of a logic path that performs iterative formulation and testing in order to maximize the effort. A lab mixing baseline was developed and documented for the Rubber Laboratory in Bldg. 4602/Room 1178.

  1. Beyond insulation and isolation

    DEFF Research Database (Denmark)

    Højlund, Marie Koldkjær

    2016-01-01

    are insulation and isolation strategies to reduce measurable and perceptual noise levels. However, these strategies do not actively support the need to feel like an integral part of the shared hospital environment, which is a key element in creating healing environments, according to the paradigm of Evidence-Based...

  2. Self-Healing Wire Insulation

    Science.gov (United States)

    Parrish, Clyde F. (Inventor)

    2012-01-01

    A self-healing system for an insulation material initiates a self-repair process by rupturing a plurality of microcapsules disposed on the insulation material. When the plurality of microcapsules are ruptured, reactants within the plurality of microcapsules react to form a replacement polymer in a break of the insulation material. This self-healing system has the ability to repair multiple breaks in a length of insulation material without exhausting the repair properties of the material.

  3. Integrated Multilayer Insulation

    Science.gov (United States)

    Dye, Scott

    2009-01-01

    Integrated multilayer insulation (IMLI) is being developed as an improved alternative to conventional multilayer insulation (MLI), which is more than 50 years old. A typical conventional MLI blanket comprises between 10 and 120 metallized polymer films separated by polyester nets. MLI is the best thermal- insulation material for use in a vacuum, and is the insulation material of choice for spacecraft and cryogenic systems. However, conventional MLI has several disadvantages: It is difficult or impossible to maintain the desired value of gap distance between the film layers (and consequently, it is difficult or impossible to ensure consistent performance), and fabrication and installation are labor-intensive and difficult. The development of IMLI is intended to overcome these disadvantages to some extent and to offer some additional advantages over conventional MLI. The main difference between IMLI and conventional MLI lies in the method of maintaining the gaps between the film layers. In IMLI, the film layers are separated by what its developers call a micro-molded discrete matrix, which can be loosely characterized as consisting of arrays of highly engineered, small, lightweight, polymer (typically, thermoplastic) frames attached to, and placed between, the film layers. The term "micro-molded" refers to both the smallness of the frames and the fact that they are fabricated in a process that forms precise small features, described below, that are essential to attainment of the desired properties. The term "discrete" refers to the nature of the matrix as consisting of separate frames, in contradistinction to a unitary frame spanning entire volume of an insulation blanket.

  4. Metal-insulator transitions

    Science.gov (United States)

    Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

    1998-10-01

    Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and

  5. Harnessing the metal-insulator transition for tunable metamaterials

    Science.gov (United States)

    Charipar, Nicholas A.; Charipar, Kristin M.; Kim, Heungsoo; Bingham, Nicholas S.; Suess, Ryan J.; Mathews, Scott A.; Auyeung, Raymond C. Y.; Piqué, Alberto

    2017-08-01

    The control of light-matter interaction through the use of subwavelength structures known as metamaterials has facilitated the ability to control electromagnetic radiation in ways not previously achievable. A plethora of passive metamaterials as well as examples of active or tunable metamaterials have been realized in recent years. However, the development of tunable metamaterials is still met with challenges due to lack of materials choices. To this end, materials that exhibit a metal-insulator transition are being explored as the active element for future metamaterials because of their characteristic abrupt change in electrical conductivity across their phase transition. The fast switching times (▵t < 100 fs) and a change in resistivity of four orders or more make vanadium dioxide (VO2) an ideal candidate for active metamaterials. It is known that the properties associated with thin film metal-insulator transition materials are strongly dependent on the growth conditions. For this work, we have studied how growth conditions (such as gas partial pressure) influence the metalinsulator transition in VO2 thin films made by pulsed laser deposition. In addition, strain engineering during the growth process has been investigated as a method to tune the metal-insulator transition temperature. Examples of both the optical and electrical transient dynamics facilitating the metal-insulator transition will be presented together with specific examples of thin film metamaterial devices.

  6. Insulator coated magnetic nanoparticulate composites with reduced core loss and method of manufacture thereof

    Science.gov (United States)

    Zhang, Yide (Inventor); Wang, Shihe (Inventor); Xiao, Danny (Inventor)

    2004-01-01

    A series of bulk-size magnetic/insulating nanostructured composite soft magnetic materials with significantly reduced core loss and its manufacturing technology. This insulator coated magnetic nanostructured composite is comprises a magnetic constituent, which contains one or more magnetic components, and an insulating constituent. The magnetic constituent is nanometer scale particles (1-100 nm) coated by a thin-layered insulating phase (continuous phase). While the intergrain interaction between the immediate neighboring magnetic nanoparticles separated by the insulating phase (or coupled nanoparticles) provide the desired soft magnetic properties, the insulating material provides the much demanded high resistivity which significantly reduces the eddy current loss. The resulting material is a high performance magnetic nanostructured composite with reduced core loss.

  7. Heat insulating plates

    Energy Technology Data Exchange (ETDEWEB)

    Allan, J.A.F.

    1976-10-28

    Micro-porous insulation plates are dealt with, for example, how they are used in the insulation of heat storage devices. Since one side of such plates is exposed to a temperature of over 700/sup 0/C, a shrinkage of the glass texture of the covering can occur, which can exceed the shrinkage of the inner micro-porous material, so that cracks and splits in the high temperature side of the covering can come about. The task of the invention is to design the plate in such a way as to prevent this from happening. For this purpose the plate is provided, according to invention specifications, with flutes, waves, ribs, waffle or grid patterns and the covering is set into the recesses originating from this.

  8. Green insulation: hemp fibers

    Energy Technology Data Exchange (ETDEWEB)

    Anon,

    2011-09-15

    Indian hemp (Cannabis indica) is known for its psychotropic values and it is banned in most countries. However, industrial hemp (Cannabis sativa) is known for its tough fibers. Several manufactures in Europe including, small niche players, have been marketing hemp insulation products for several years. Hemp is a low environmental impact material. Neither herbicide nor pesticide is used during the growth of hemp. The fibers are extracted in a waste-free and chemical-free mechanical process. Hemp can consume CO2 during its growth. In addition, hemp fiber can be disposed of harmlessly by composting or incineration at the end of its life. Hemp fibers are processed and treated only minimally to resist rot and fungal activity. There is little health risk when producing and installing the insulation, thanks to the absence of toxic additive. Its thermal resistance is comparable to mineral wool. But the development and marketing of hemp fibers may be restricted in North America.

  9. Super-insulation

    International Nuclear Information System (INIS)

    Gerold, J.

    1985-01-01

    The invention concerns super-insulation, which also acts as spacing between two pressurized surfaces, where the crossing bars in at least two layers are provided, with interposed foil. The super-insulation is designed so that it can take compression forces and limits thermal radiation and thermal conduction sufficiently, where the total density of heat flow is usually limited to a few watts per m 2 . The solution to the problem is characterized by the fact that the bars per layer are parallel and from layer to layer they are at an angle to each other and the crossover positions of the bars of different layers are at fixed places and so form contact columns. The basic idea is that bars crossing over each other to support compression forces are used so that contact columns are formed, which are compressed to a certain extent by the load. (orig./PW) [de

  10. Insulating materials for optoelectronics

    International Nuclear Information System (INIS)

    Agullo-Lopez, F.

    1990-01-01

    Optoelectronics is an interdisciplinary field. Basic functions of an optoelectronic system include the generator of the optical signal, its transmission and handling and, finally, its detection, storage and display. A large variety of semiconductor and insulating materials are used or are being considered to perform those functions. The authors focus on insulating materials, mostly oxides. For signal generation, tunable solid state lasers, either vibronic or those based oon colour centres are briefly described, and their main operating parameters summarized. Reference is made to some developments on fiber and waveguide lasers. Relevant physical features of the silica fibres used for low-loss, long-band, optical transmission are reviewed, as well as present efforts to further reduce attenuation in the mid-infrared range. Particular attention is paid to photorefractive materials (LiNbO 3 , BGO, BSO, etc.), which are being investigated

  11. Super insulating aerogel glazing

    DEFF Research Database (Denmark)

    Schultz, Jørgen Munthe; Jensen, Karsten Ingerslev; Kristiansen, Finn Harken

    2004-01-01

    form the weakest part of the thermal envelope with respect to heat loss coefficient, but on the other hand also play an important role for passive solar energy utilisation. For window orientations other than south, the net energy balance will be close to or below zero. However, the properties......Monolithic silica aerogel offers the possibility of combining super insulation and high solar energy transmittance, which has been the background for a previous and a current EU project on research and development of monolithic silica aerogel as transparent insulation in windows. Generally, windows...... of aerogel glazing will allow for a positive net energy gain even for north facing vertical windows in a Danish climate during the heating season. This means that high quality daylight can be obtained even with additional energy gain. On behalf of the partners of the two EU projects, results related...

  12. Pourable Foam Insulation

    Science.gov (United States)

    Harvey, James A.; Butler, John M.; Chartoff, Richard P.

    1989-01-01

    Report describes search for polyisocyanurate/polyurethane foam insulation with superior characteristics. Discusses chemistry of current formulations. Tests of formulations, of individual ingredients and or alternative new formulations described. Search revealed commercially available formulations exhibiting increased thermal stability at temperatures up to 600 degree C, pours readily before curing, presents good appearance after curing, and remains securely bonded to aluminum at cryogenic temperatures. Total of 42 different formulations investigated, 10 found to meet requirements.

  13. External Insulation of Masonry Walls and Wood Framed Walls

    Energy Technology Data Exchange (ETDEWEB)

    Baker, P.

    2013-01-01

    The use of exterior insulation on a building is an accepted and effective means to increase the overall thermal resistance of the assembly that also has other advantages of improved water management and often increased air tightness of building assemblies. For thin layers of insulation (1" to 1 1/2"), the cladding can typically be attached directly through the insulation back to the structure. For thicker insulation layers, furring strips have been added as a cladding attachment location. This approach has been used in the past on numerous Building America test homes and communities (both new and retrofit applications), and has been proven to be an effective and durable means to provide cladding attachment. However, the lack of engineering data has been a problem for many designers, contractors, and code officials. This research project developed baseline engineering analysis to support the installation of thick layers of exterior insulation on existing masonry and frame walls. Furthermore, water management details necessary to integrate windows, doors, decks, balconies and roofs were created to provide guidance on the integration of exterior insulation strategies with other enclosure elements.

  14. External Insulation of Masonry Walls and Wood Framed Walls

    Energy Technology Data Exchange (ETDEWEB)

    Baker, P. [Building Science Corporation, Somerville, MA (United States)

    2013-01-01

    The use of exterior insulation on a building is an accepted and effective means to increase the overall thermal resistance of the assembly that also has other advantages of improved water management and often increased air tightness of building assemblies. For thin layers of insulation (1” to 1 ½”), the cladding can typically be attached directly through the insulation back to the structure. For thicker insulation layers, furring strips have been added as a cladding attachment location. This approach has been used in the past on numerous Building America test homes and communities (both new and retrofit applications), and has been proven to be an effective and durable means to provide cladding attachment. However, the lack of engineering data has been a problem for many designers, contractors, and code officials. This research project developed baseline engineering analysis to support the installation of thick layers of exterior insulation on existing masonry and frame walls. Furthermore, water management details necessary to integrate windows, doors, decks, balconies and roofs were created to provide guidance on the integration of exterior insulation strategies with other enclosure elements.

  15. Insulator layer formation in MgB2 SIS junctions

    International Nuclear Information System (INIS)

    Shimakage, H.; Tsujimoto, K.; Wang, Z.; Tonouchi, M.

    2005-01-01

    The dependence of current-voltage characteristics on thin film deposition conditions was investigated using MgB 2 /AlN/NbN SIS junctions. By increasing the substrate temperature in AlN insulator deposition, the current density decreased and the normal resistance increased. The results indicated that an additional insulator layer between the MgB 2 and AlN formed, either before or during the AlN deposition. The thickness of the additional insulator layer was increased with an increase in the AlN deposition temperature. From the dependence of current density on the thickness of AlN in low temperature depositions, the thickness of the additional insulator layer was estimated to be 1-1.5 nm when the AlN insulator was deposited from 0.14 to 0.7 nm. Moreover, with the current density of MgB 2 /AlN/MgB 2 SIS junctions, further insulator layer formation was confirmed

  16. Thin film plasma coatings from dielectric free-flowing materials

    International Nuclear Information System (INIS)

    Timofeeva, L.A.; Katrich, S.A.; Solntsev, L.A.

    1994-01-01

    Fabrication of thin film plasma coatings from insulating free-flowing materials is considered. Molybdenum-tart ammonium coating of 3...5 μ thickness deposited on glassy carbon, aluminium, silicon, nickel, cast iron and steel substrates in 'Bulat-ZT' machine using insulating free-flowing materials cathod was found to form due to adsorption, absorption and dissuasion processes. The use of insulating free-flowing materials coatings allow to exclude pure metals cathods in plasma-plating process

  17. Limiting oxygen concentration for extinction of upward spreading flames over inclined thin polyethylene-insulated NiCr electrical wires with opposed-flow under normal- and micro-gravity

    KAUST Repository

    Hu, Longhua

    2016-10-02

    Materials, such as electrical wire, used in spacecraft must pass stringent fire safety standards. Tests for such standards are typically performed under normal gravity conditions and then extended to applications under microgravity conditions. The experiments reported here used polyethylene (PE)-insulated (thickness of 0.15 mm) Nichrome (NiCr)-core (diameter of 0.5 mm) electrical wires. Limiting oxygen concentrations (LOC) at extinction were measured for upward spreading flame at various forced opposed-flow (downward) speeds (0−25 cm/s) at several inclination angles (0−75°) under normal gravity conditions. The differences from those previously obtained under microgravity conditions were quantified and correlated to provide a reference for the development of fire safety test standards for electrical wires to be used in space exploration. It was found that as the opposed-flow speed increased for a specified inclination angle (except the horizontal case), LOC first increased, then decreased and finally increased again. The first local maximum of this LOC variation corresponded to a critical forced flow speed resulted from the change in flame spread pattern from concurrent to counter-current type. This critical forced flow speed correlated well with the buoyancy-induced flow speed component in the wire\\'s direction when the flame base width along the wire was used as a characteristic length scale. LOC was generally higher under the normal gravity than under the microgravity and the difference between the two decreased as the opposed-flow speed increases, following a reasonably linear trend at relatively higher flow speeds (over 10 cm/s). The decrease in the difference in LOC under normal- and microgravity conditions as the opposed-flow speed increases correlated well with the gravity acceleration component in the wire\\'s direction, providing a measure to extend LOC determined by the tests under normal gravity conditions (at various inclination angles and opposed

  18. Reduction of heat insulation upon soaking of the insulation layer

    Science.gov (United States)

    Achtliger, J.

    1983-09-01

    Improved thermal protection of hollow masonry by introduction of a core insulation between the inner and outer shell is discussed. The thermal conductivity of insulation materials was determined in dry state and after soaking by water with different volume-related moisture contents. The interpolated thermal conductivity values from three measured values at 10 C average temperature are presented as a function of the pertinent moisture content. Fills of expanded polystyrene, perlite and granulated mineral fibers, insulating boards made of mineral fibers and in situ cellular plastics produced from urea-formaldehyde resin were investigated. Test results show a confirmation of thermal conductivity values for insulating materials in hollow masonry.

  19. Electrical insulating liquid: A review

    Directory of Open Access Journals (Sweden)

    Deba Kumar Mahanta

    2017-08-01

    Full Text Available Insulating liquid plays an important role for the life span of the transformer. Petroleum-based mineral oil has become dominant insulating liquid of transformer for more than a century for its excellent dielectric and cooling properties. However, the usage of petroleum-based mineral oil, derived from a nonrenewable energy source, has affected the environment for its nonbiodegradability property. Therefore, researchers direct their attention to renewable and biodegradable alternatives. Palm fatty acid ester, coconut oil, sunflower oil, etc. are considered as alternatives to replace mineral oil as transformer insulation liquid. This paper gives an extensive review of different liquid insulating materials used in a transformer. Characterization of different liquids as an insulating material has been discussed. An attempt has been made to classify different insulating liquids-based on different properties.

  20. Chiral topological excitons in a Chern band insulator

    Science.gov (United States)

    Chen, Ke; Shindou, Ryuichi

    2017-10-01

    A family of semiconductors called Chern band insulators are shown to host exciton bands with nonzero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as ±1 and ±2 in the electronic Chern insulator phase. The nontrivial topology can be experimentally observed both by a nonlocal optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells, and (Bi,Sb)2Te3 thin films are promising candidates for a platform of topological excitonics.

  1. Unusual metal-insulator transition in disordered ferromagnetic films

    International Nuclear Information System (INIS)

    Muttalib, K.A.; Wölfle, P.; Misra, R.; Hebard, A.F.

    2012-01-01

    We present a theoretical interpretation of recent data on the conductance near and farther away from the metal-insulator transition in thin ferromagnetic Gd films of thickness b≈2-10 nm. For increasing sheet resistances a dimensional crossover takes place from d=2 to d=3 dimensions, since the large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L φ ≲b at strong disorder. The conductivity data in the various regimes obey fractional power-law or logarithmic temperature dependence. One observes weak localization and interaction induced corrections at weaker disorder. At strong disorder, near the metal-insulator transition, the data show scaling and collapse onto two scaling curves for the metallic and insulating regimes. We interpret this unusual behavior as proof of two distinctly different correlation length exponents on both sides of the transition.

  2. Conformally encapsulated multi-electrode arrays with seamless insulation

    Energy Technology Data Exchange (ETDEWEB)

    Tabada, Phillipe J.; Shah, Kedar G.; Tolosa, Vanessa; Pannu, Satinderall S.; Tooker, Angela; Delima, Terri; Sheth, Heeral; Felix, Sarah

    2016-11-22

    Thin-film multi-electrode arrays (MEA) having one or more electrically conductive beams conformally encapsulated in a seamless block of electrically insulating material, and methods of fabricating such MEAs using reproducible, microfabrication processes. One or more electrically conductive traces are formed on scaffold material that is subsequently removed to suspend the traces over a substrate by support portions of the trace beam in contact with the substrate. By encapsulating the suspended traces, either individually or together, with a single continuous layer of an electrically insulating material, a seamless block of electrically insulating material is formed that conforms to the shape of the trace beam structure, including any trace backings which provide suspension support. Electrical contacts, electrodes, or leads of the traces are exposed from the encapsulated trace beam structure by removing the substrate.

  3. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP

    International Nuclear Information System (INIS)

    Martil, I.; Prado, A. del; San Andres, E.; Gonzalez Diaz, G.; Martinez, F.L.

    2003-01-01

    We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiN x :H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions (defined in this article as the nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) to N-rich (x=1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (x=1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiN x :H/semiconductor devices with Si, In 0.53 Ga 0.47 As, and InP. After RTA treatments, the electrical properties of the three different SiN x :H/semiconductor interfaces can be explained, noting the microstructural modifications that SiN x :H experiences upon annealing

  4. 1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

    Directory of Open Access Journals (Sweden)

    Ke-Jing Lee

    2017-12-01

    Full Text Available A one-transistor and one-resistor (1T1R architecture with a resistive random access memory (RRAM cell connected to an organic thin-film transistor (OTFT device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 2.5 cm2/Vs, low threshold voltage of −2.8 V, and low leakage current of 10−12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA and reliable data retention (over ten years. This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

  5. Magnetically insulated H- diodes

    International Nuclear Information System (INIS)

    Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

    1993-01-01

    At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

  6. Nanometric holograms based on a topological insulator material.

    Science.gov (United States)

    Yue, Zengji; Xue, Gaolei; Liu, Juan; Wang, Yongtian; Gu, Min

    2017-05-18

    Holography has extremely extensive applications in conventional optical instruments spanning optical microscopy and imaging, three-dimensional displays and metrology. To integrate holography with modern low-dimensional electronic devices, holograms need to be thinned to a nanometric scale. However, to keep a pronounced phase shift modulation, the thickness of holograms has been generally limited to the optical wavelength scale, which hinders their integration with ultrathin electronic devices. Here, we break this limit and achieve 60 nm holograms using a topological insulator material. We discover that nanometric topological insulator thin films act as an intrinsic optical resonant cavity due to the unequal refractive indices in their metallic surfaces and bulk. The resonant cavity leads to enhancement of phase shifts and thus the holographic imaging. Our work paves a way towards integrating holography with flat electronic devices for optical imaging, data storage and information security.

  7. Heat Transport in Graphene Ferromagnet-Insulator-Superconductor Junctions

    Institute of Scientific and Technical Information of China (English)

    LI Xiao-Wei

    2011-01-01

    We study heat transport in a graphene ferromagnet-insulator-superconducting junction. It is found that the thermal conductance of the graphene ferromagnet-insulator-superconductor (FIS) junction is an oscillatory function of the barrier strength x in the thin-barrier limit. The gate potential U0 decreases the amplitude of thermal conductance oscillation. Both the amplitude and phase of the thermal conductance oscillation varies with the exchange energy Eh. The thermal conductance of a graphene FIS junction displays the usual exponential dependence on temperature, reflecting the s-wave symmetry of superconducting graphene.%@@ We study heat transport in a graphene ferromagnet-insulator-superconducting junction.It is found that the thermal conductance of the graphene ferromagnet-insulator-superconductor(FIS)junction is an oscillatory function of the barrier strength X in the thin-barrier limit.The gate potential Uo decreases the amplitude of thermal conductance oscillation.Both the amplitude and phase of the thermal conductance oscillation varies with the exchange energy Eh.The thermal conductance of a graphene FIS junction displays the usual exponential dependence on temperature, reflecting the s-wave symmetry of superconducting graphene.

  8. Insulation structure of thermonuclear device

    International Nuclear Information System (INIS)

    Suzuki, Takayuki; Usami, Saburo; Tsukamoto, Hideo; Kikuchi, Mitsuru

    1998-01-01

    The present invention provides an insulating structure of a thermonuclear device, in which insulation materials between toroidal coils are not broken even if superconductive toroidal coils are used. Namely, a tokamak type thermonuclear device of an insulating structure type comprises superconductive toroidal coils for confining plasmas arranged in a circular shape directing the center each at a predetermined angle, and the toroidal coils are insulated from each other. The insulation materials are formed by using a biaxially oriented fiber reinforced plastics. The contact surface of the toroidal coils and the insulating materials are arranged so that they are contact at a woven surface of the fiber reinforced plastics. Either or both of the contact surfaces of the fiber reinforced plastics and the toroidal coils are coated with a high molecular compound having a low friction coefficient. With such a constitution, since the interlayer shearing strength of the biaxially oriented fiber reinforced plastics is about 1/10 of the compression strength, the shearing stress exerted on the insulation material is reduced. Since a static friction coefficient on the contact surface is reduced to provide a structure causing slipping, shearing stress does not exceeds a predetermined limit. As a result, breakage of the insulation materials between the toroidal coils can be prevented. (I.S.)

  9. Plastic Materials for Insulating Applications.

    Science.gov (United States)

    Wang, S. F.; Grossman, S. J.

    1987-01-01

    Discusses the production and use of polymer materials as thermal insulators. Lists several materials that provide varying degrees of insulation. Describes the production of polymer foam and focuses on the major applications of polystyrene foam, polyurethane foam, and polyisocyanurate foam. (TW)

  10. Transport and screen blockage characteristics of reflective metallic insulation materials

    International Nuclear Information System (INIS)

    Brocard, D.N.

    1984-01-01

    In the event of a LOCA within a nuclear power plant, it is possible for insulation debris to be generated by the break jet. Such debris has the potential for PWR sump screen (or BWR RHR suction inlet) blockage and thus can affect the long-term recirculation capability. In addition to the variables of break jet location and orientation, the types and quantities of debris which could be generated are dependent on the insulation materials employed. This experimental investigation was limited to reflective metallic insulation and components thereof. The study was aimed at determining the flow velocities needed to transport the insulation debris to the sump screens and the resulting modes of screen blockage. The tests revealed that thin metallic foils (0.0025 in. and 0.004 in.) could transport at low flow velocities, 0.2 to 0.5 ft/sec. Thicker foils (0.008 in.) transported at higher velocities, 0.4 to 0.8 ft/sec, and as fabricated half cylinder insulation units required velocities in excess of 1.0 ft/sec for transport. The tests also provided information on screen blockage patterns that showed blockage could occur at the lower portion of the screen as foils readily flipped on the screen when reaching it

  11. Guided Acoustic and Optical Waves in Silicon-on-Insulator for Brillouin Scattering and Optomechanics

    Science.gov (United States)

    2016-08-01

    APL PHOTONICS 1, 071301 (2016) Guided acoustic and optical waves in silicon-on- insulator for Brillouin scattering and optomechanics Christopher J...is possible to simultaneously guide optical and acoustic waves in the technologically important silicon on insulator (SOI) material system. Thin...high sound velocity — makes guiding acoustic waves difficult, motivating the use of soft chalcogenide glasses and partial or complete releases (removal

  12. Magnetically self-insulated transformers

    International Nuclear Information System (INIS)

    Novac, B.M.; Smith, I.R.; Brown, J.

    2002-01-01

    Magnetic insulation is the only practicable form of insulation for much equipment used in ultrahigh pulsed-power work, including transmission lines and plasma opening switches. It has not however so far been successfully exploited in the transformers that are necessarily involved, and the first proposed design that appeared more than 30 years ago raised apparently insuperable problems. The two novel arrangements for a magnetically insulated transformer described in this paper overcome the problems faced by the earlier designs and also offer considerable scope for development in a number of important areas. Theoretical justification is given for their insulating properties, and this is confirmed by proof-of-principle results obtained from a small-scale experimental prototype in which magnetic insulation was demonstrated at up to 100 kV. (author)

  13. Research on vacuum insulation for cryocables

    International Nuclear Information System (INIS)

    Graneau, P.

    1974-01-01

    Vacuum insulation, as compared with solid insulation, simplifies the construction of both resistive or superconducting cryogenic cables. The common vacuum space in the cable can furnish thermal insulation between the environment and the cryogenic coolant, provide electrical insulation between conductors, and establish thermal isolation between go- and return-coolant streams. The differences between solid and vacuum high voltage insulation are discussed, and research on the design, materials selection, and testing of vacuum insulated cryogenic cables is described

  14. Superconductivity and ferromagnetism in topological insulators

    Science.gov (United States)

    Zhang, Duming

    Topological insulators, a new state of matter discovered recently, have attracted great interest due to their novel properties. They are insulating inside the bulk, but conducting at the surface or edges. This peculiar behavior is characterized by an insulating bulk energy gap and gapless surface or edge states, which originate from strong spin-orbit coupling and time-reversal symmetry. The spin and momentum locked surface states not only provide a model system to study fundamental physics, but can also lead to applications in spintronics and dissipationless electronics. While topological insulators are interesting by themselves, more exotic behaviors are predicted when an energy gap is induced at the surface. This dissertation explores two types of surface state gap in topological insulators, a superconducting gap induced by proximity effect and a magnetic gap induced by chemical doping. The first three chapters provide introductory theory and experimental details of my research. Chapter 1 provides a brief introduction to the theoretical background of topological insulators. Chapter 2 is dedicated to material synthesis principles and techniques. I will focus on two major synthesis methods: molecular beam epitaxy for the growth of Bi2Se3 thin films and chemical vapor deposition for the growth of Bi2Se3 nanoribbons and nanowires. Material characterization is discussed in Chapter 3. I will describe structural, morphological, magnetic, electrical, and electronic characterization techniques used to study topological insulators. Chapter 4 discusses the experiments on proximity-induced superconductivity in topological insulator (Bi2Se3) nanoribbons. This work is motivated by the search for the elusive Majorana fermions, which act as their own antiparticles. They were proposed by Ettore Majorara in 1937, but have remained undiscovered. Recently, Majorana's concept has been revived in condensed matter physics: a condensed matter analog of Majorana fermions is predicted to

  15. Excitons in insulators

    International Nuclear Information System (INIS)

    Grasser, R.; Scharmann, A.

    1983-01-01

    This chapter investigates absorption, reflectivity, and intrinsic luminescence spectra of free and/or self-trapped (localized) excitons in alkali halides and rare gas solids. Introduces the concepts underlying the Wannier-Mott and Frenkel exciton models, two extreme pictures of an exciton in crystalline materials. Discusses the theoretical and experimental background; excitons in alkali halides; and excitons in rare gas solids. Shows that the intrinsic optical behavior of wide gap insulators in the range of the fundamental absorption edge is controlled by modified Wannier-Mott excitons. Finds that while that alkali halides only show free and relaxed molecular-like exciton emission, in rare gas crystals luminescence due to free, single and double centered localized excitons is observed. Indicates that the simultaneous existence of free and self-trapped excitons in these solid requires an energy barrier for self-trapping

  16. Developing Topological Insulator Fiber Based Photon Pairs Source for Ultrafast Optoelectronic Applications

    Science.gov (United States)

    2016-04-01

    of a thin layer of topological insulator Bi2Se3 with the transmission of T = 50%. We apply magnetic field B=3 tesla normal to the sample and parallel...nonlinear induced by magnetic field in the Topological Insulator Bi2Se3 and Molybdenum Disulfide MoS2. The nonlinear effect is pulse broadening...Topological Insulator Q- Switched Erbium-Doped Fiber Laser”, IEEE J. Sel. Top. Quant. Electron., 20, 0900508 (2014). [2]. Shuqing Chen et al, “Stable Q

  17. Insulated electrocardiographic electrodes. [without paste electrolyte

    Science.gov (United States)

    David, R. M.; Portnoy, W. A. (Inventor)

    1975-01-01

    An integrated system is disclosed including an insulated electrode and an impedance transformer which can be assembled in a small plastic housing and used for the acquisition of electrocardiographic data. The electrode may be employed without a paste electrolyte and may be attached to the body for extended usage without producing skin reaction. The electrode comprises a thin layer of suitable nontoxic dielectric material preferably deposited by radio frequency sputtering onto a conductive substrate. The impedance transformer preferably comprises an operational amplifier having an FET input stage connected in the unity gain configuration which provides a very low lower cut-off frequency, a high input impedance with a very small input bias current, a low output impedance, and a high signal-to-noise ratio.

  18. Lightweight, Thermally Insulating Structural Panels

    Science.gov (United States)

    Eisen, Howard J.; Hickey, Gregory; Wen, Liang-Chi; Layman, William E.; Rainen, Richard A.; Birur, Gajanana C.

    1996-01-01

    Lightweight, thermally insulating panels that also serve as structural members developed. Honeycomb-core panel filled with low-thermal-conductivity, opacified silica aerogel preventing convection and minimizes internal radiation. Copper coating on face sheets reduces radiation. Overall thermal conductivities of panels smaller than state-of-art commercial non-structurally-supporting foam and fibrous insulations. On Earth, panels suitable for use in low-air-pressure environments in which lightweight, compact, structurally supporting insulation needed; for example, aboard high-altitude aircraft or in partially evacuated panels in refrigerators.

  19. Reflecting variable opening insulating panel

    International Nuclear Information System (INIS)

    Nungesser, W.T.

    1976-01-01

    A description is given of a reflecting variable opening insulating panel assembly, comprising a static panel assembly of reflecting insulation sheets forming a cavity along one side of the panel and a movable panel opening out by sliding from the cavity of the static panel, and a locking device for holding the movable panel in a position extending from the cavity of the static panel. This can apply to a nuclear reactor of which the base might require maintenance and periodical checking and for which it is desirable to have available certain processes for the partial dismantling of the insulation [fr

  20. Insulating fcc YH

    International Nuclear Information System (INIS)

    Molen, S. J. van der; Nagengast, D. G.; Gogh, A. T. M. van; Kalkman, J.; Kooij, E. S.; Rector, J. H.; Griessen, R.

    2001-01-01

    We study the structural, optical, and electrical properties of Mg z Y 1-z switchable mirrors upon hydrogenation. It is found that the alloys disproportionate into essentially pure YH 3-δ and MgH 2 with the crystal structure of YH 3-δ dependent on the Mg concentration z. For 0 3-δ are observed, whereas for z≥0.1 only cubic YH 3-δ is present. Interestingly, cubic YH 3-δ is expanded compared to YH 2 , in disagreement with theoretical predictions. From optical and electrical measurements we conclude that cubic YH 3-δ is a transparent insulator with properties similar to hexagonal YH 3-δ . Our results are inconsistent with calculations predicting fcc YH 3-δ to be metallic, but they are in good agreement with recent GW calculations on both hcp and fcc YH 3 . Finally, we find an increase in the effective band gap of the hydrided Mg z Y 1-z alloys with increasing z. Possibly this is due to quantum confinement effects in the small YH 3 clusters

  1. Topological Insulator Nanowires and Nanoribbons

    KAUST Repository

    Kong, Desheng; Randel, Jason C.; Peng, Hailin; Cha, Judy J.; Meister, Stefan; Lai, Keji; Chen, Yulin; Shen, Zhi-Xun; Manoharan, Hari C.; Cui, Yi

    2010-01-01

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive

  2. Measure Guideline: Basement Insulation Basics

    Energy Technology Data Exchange (ETDEWEB)

    Aldrich, R.; Mantha, P.; Puttagunta, S.

    2012-10-01

    This guideline is intended to describe good practices for insulating basements in new and existing homes, and is intended to be a practical resources for building contractors, designers, and also to homeowners.

  3. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  4. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  5. 16 CFR 460.18 - Insulation ads.

    Science.gov (United States)

    2010-01-01

    ... Commercial Practices FEDERAL TRADE COMMISSION TRADE REGULATION RULES LABELING AND ADVERTISING OF HOME INSULATION § 460.18 Insulation ads. (a) If your ad gives an R-value, you must give the type of insulation and... your ad gives a price, you must give the type of insulation, the R-value at a specific thickness, the...

  6. Cryogenic foam insulation: Abstracted publications

    Science.gov (United States)

    Williamson, F. R.

    1977-01-01

    A group of documents were chosen and abstracted which contain information on the properties of foam materials and on the use of foams as thermal insulation at cryogenic temperatures. The properties include thermal properties, mechanical properties, and compatibility properties with oxygen and other cryogenic fluids. Uses of foams include applications as thermal insulation for spacecraft propellant tanks, and for liquefied natural gas storage tanks and pipelines.

  7. Avalanches in insulating gases

    International Nuclear Information System (INIS)

    Verhaart, H.F.A.

    1982-01-01

    Avalanches of charged particles in gases are often studied with the ''electrical method'', the measurement of the waveform of the current in the external circuit. In this thesis a substantial improvement of the time resolution of the measuring setup, to be used for the electrical method, is reported. The avalanche is started by an N 2 -laser with a pulse duration of only 0.6 ns. With this laser it is possible to release a high number of primary electrons (some 10 8 ) which makes it possible to obtain sizeable signals, even at low E/p values. With the setup it is possible to analyze current waveforms with a time resolution down to 1.4 ns, determined by both the laser and the measuring system. Furthermore it is possible to distinguish between the current caused by the electrons and the current caused by the ions in the avalanche and to monitor these currents simultaneously. Avalanche currents are measured in N 2 , CO 2 , O 2 , H 2 O, air of varying humidity, SF 6 and SF 6 /N 2 mixtures. Depending on the nature of the gas and the experimental conditions, processes as diffusion, ionization, attachment, detachment, conversion and secondary emission are observed. Values of parameters with which these processes can be described, are derived from an analysis of the current waveforms. For this analysis already published theories and new theories described in this thesis are used. The drift velocity of both the electrons and the ions could be easily determined from measured avalanche currents. Special attention is paid to avalanches in air becasue of the practical importance of air insulation. (Auth.)

  8. Spin-dependent Peltier effect in 3D topological insulators

    Science.gov (United States)

    Sengupta, Parijat; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard

    2013-03-01

    The Peltier effect represents the heat carrying capacity of a certain material when current passes through it. When two materials with different Peltier coefficients are placed together, the Peltier effect causes heat to flow either towards or away from the interface between them. This work utilizes the spin-polarized property of 3D topological insulator (TI) surface states to describe the transport of heat through the spin-up and spin-down channels. It has been observed that the spin channels are able to carry heat independently of each other. Spin currents can therefore be employed to supply or extract heat from an interface between materials with spin-dependent Peltier coefficients. The device is composed of a thin film of Bi2Se3 sandwiched between two layers of Bi2Te3. The thin film of Bi2Se3serves both as a normal and topological insulator. It is a normal insulator when its surfaces overlap to produce a finite band-gap. Using an external gate, Bi2Se3 film can be again tuned in to a TI. Sufficiently thick Bi2Te3 always retain TI behavior. Spin-dependent Peltier coefficients are obtained and the spin Nernst effect in TIs is shown by controlling the temperature gradient to convert charge current to spin current.

  9. Electrical insulators for the theta-pinch fusion reactor

    International Nuclear Information System (INIS)

    Clinard, F.W. Jr.

    1976-01-01

    The five major applications for electrical insulators in the Reference Theta Pinch Reactor are as follows: (1) first-wall insulator, (2) blanket intersegment insulator, (3) graphite encapsulating insulator, (4) implosion coil insulator, and (5) compression coil insulator. Insulator design proposals and some preliminary test results are given for each application

  10. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  11. Impact Verification of Aerogel Insulation Paint on Historic Brick Facades

    Science.gov (United States)

    Ganobjak, Michal; Kralova, Eva

    2017-10-01

    Increasing the sustainability of existing buildings is being motivated by reduction of their energy demands. It is the above all the building envelope and its refurbishment by substitution or addition of new materials that makes the opportunity for reduction of energy consumption. A special type of refurbishment is conservation of historical buildings. Preservation of historic buildings permits also application of innovative methods and materials in addition to the original materials if their effects are known and the gained experience ensures their beneficial effect. On the market, there are new materials with addition of silica aerogel in various forms of products. They are also potentially useful in conservation of monuments. However, the effects of aerogel application in these cases are not known. For refurbishment is commercially available additional transparent insulation paint - Nansulate Clear Coat which is containing aerogel and can be used for structured surfaces such as bricks. A series of experiments examined the thermo-physical manifestation of an ultra-thin insulation coating of Nansulate Clear Coat containing silica aerogel on a brick facade. The experiments of active and passive thermography have observed effects of application on the small-scale samples of the brick façade of a protected historical building. Through a series of experiments were measured thermal insulation effect and influence on the aesthetic characteristics such as change in colour and gloss. The treated samples were compared to a reference. Results have shown no thermal-insulating manifestation of the recommended three layers of insulation paint. The three layers recommended by the manufacturer did not significantly affect the appearance of the brick facade. Color and gloss were not significantly changed. Experiments showed the absence of thermal insulation effect of Nansulate transparent triple coating. The thermal insulation effect could likely be reached by more layers of

  12. Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

    Directory of Open Access Journals (Sweden)

    Smajo Sulejmanovic

    2014-11-01

    Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

  13. Processing and performance of organic insulators as a gate layer in ...

    Indian Academy of Sciences (India)

    Fabrication of organic thin film transistor (OTFT) on flexible substrates is a challenge, because of its low softening temperature, high roughness and flexible nature. Although several organic dielectrics have been used as gate insulator, it is difficult to choose one in absence of a comparative study covering processing of ...

  14. Processing and performance of organic insulators as a gate layer in ...

    Indian Academy of Sciences (India)

    Abstract. Fabrication of organic thin film transistor (OTFT) on flexible substrates is a challenge, because of its low softening temperature, high roughness and flexible nature. Although several organic dielectrics have been used as gate insulator, it is difficult to choose one in absence of a comparative study covering ...

  15. Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

    NARCIS (Netherlands)

    Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F.C.; van der Zant, H.S.J.

    2016-01-01

    We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm

  16. First principles description of the insulator-metal transition in europium monoxide

    KAUST Repository

    Wang, Hao

    2012-02-01

    Europium monoxide, EuO, is a ferromagnetic insulator. Its electronic structure under pressure and doping is investigated by means of density functional theory. We employ spin polarized electronic structure calculations including onsite electron-electron interaction for the localized Eu 4f and 5d electrons. Our results show that under pressure the ferromagnetism is stable, both for hydrostatic and uniaxial pressure, while the compound undergoes an insulator-metal transition. The insulator-metal transition in O deficient and Gd doped EuO is reproduced for an impurity concentration of 6.25%. A 10 monolayer thick EuO(1 0 0) thin film is predicted to be an insulator with a narrow band gap of 0.08 eV. © 2011 Elsevier B.V. All rights reserved.

  17. Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

    Science.gov (United States)

    Ireland, R. M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N. P.; Katz, H. E.

    2018-04-01

    We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2 Se3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2 Se3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm2/V s at 5 K.

  18. Positron Annihilation in Insulating Materials

    International Nuclear Information System (INIS)

    Asoka-Kumar, P; Sterne, PA

    2002-01-01

    We describe positron results from a wide range of insulating materials. We have completed positron experiments on a range of zeolite-y samples, KDP crystals, alkali halides and laser damaged SiO 2 . Present theoretical understanding of positron behavior in insulators is incomplete and our combined theoretical and experimental approach is aimed at developing a predictive understanding of positrons and positronium annihilation characteristics in insulators. Results from alkali halides and alkaline-earth halides show that positrons annihilate with only the halide ions, with no apparent contribution from the alkali or alkaline-earth cations. This contradicts the results of our existing theory for metals, which predicts roughly equal annihilation contributions from cation and anion. We also present result obtained using Munich positron microprobe on laser damaged SiO 2 samples

  19. Floquet topological insulators for sound

    Science.gov (United States)

    Fleury, Romain; Khanikaev, Alexander B.; Alù, Andrea

    2016-06-01

    The unique conduction properties of condensed matter systems with topological order have recently inspired a quest for the similar effects in classical wave phenomena. Acoustic topological insulators, in particular, hold the promise to revolutionize our ability to control sound, allowing for large isolation in the bulk and broadband one-way transport along their edges, with topological immunity against structural defects and disorder. So far, these fascinating properties have been obtained relying on moving media, which may introduce noise and absorption losses, hindering the practical potential of topological acoustics. Here we overcome these limitations by modulating in time the acoustic properties of a lattice of resonators, introducing the concept of acoustic Floquet topological insulators. We show that acoustic waves provide a fertile ground to apply the anomalous physics of Floquet topological insulators, and demonstrate their relevance for a wide range of acoustic applications, including broadband acoustic isolation and topologically protected, nonreciprocal acoustic emitters.

  20. Fermi surfaces in Kondo insulators

    Science.gov (United States)

    Liu, Hsu; Hartstein, Máté; Wallace, Gregory J.; Davies, Alexander J.; Ciomaga Hatnean, Monica; Johannes, Michelle D.; Shitsevalova, Natalya; Balakrishnan, Geetha; Sebastian, Suchitra E.

    2018-04-01

    We report magnetic quantum oscillations measured using torque magnetisation in the Kondo insulator YbB12 and discuss the potential origin of the underlying Fermi surface. Observed quantum oscillations as well as complementary quantities such as a finite linear specific heat capacity in YbB12 exhibit similarities with the Kondo insulator SmB6, yet also crucial differences. Small heavy Fermi sections are observed in YbB12 with similarities to the neighbouring heavy fermion semimetallic Fermi surface, in contrast to large light Fermi surface sections in SmB6 which are more similar to the conduction electron Fermi surface. A rich spectrum of theoretical models is suggested to explain the origin across different Kondo insulating families of a bulk Fermi surface potentially from novel itinerant quasiparticles that couple to magnetic fields, yet do not couple to weak DC electric fields.

  1. Topological insulators and topological superconductors

    CERN Document Server

    Bernevig, Andrei B

    2013-01-01

    This graduate-level textbook is the first pedagogical synthesis of the field of topological insulators and superconductors, one of the most exciting areas of research in condensed matter physics. Presenting the latest developments, while providing all the calculations necessary for a self-contained and complete description of the discipline, it is ideal for graduate students and researchers preparing to work in this area, and it will be an essential reference both within and outside the classroom. The book begins with simple concepts such as Berry phases, Dirac fermions, Hall conductance and its link to topology, and the Hofstadter problem of lattice electrons in a magnetic field. It moves on to explain topological phases of matter such as Chern insulators, two- and three-dimensional topological insulators, and Majorana p-wave wires. Additionally, the book covers zero modes on vortices in topological superconductors, time-reversal topological superconductors, and topological responses/field theory and topolo...

  2. Spin-transfer torque generated by a topological insulator

    KAUST Repository

    Mellnik, A. R.

    2014-07-23

    Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron\\' s spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi 2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications. © 2014 Macmillan Publishers Limited. All rights reserved.

  3. Topological insulators fundamentals and perspectives

    CERN Document Server

    Ortmann, Frank; Valenzuela, Sergio O

    2015-01-01

    There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic

  4. Electric fields and electrical insulation

    DEFF Research Database (Denmark)

    McAllister, Iain Wilson

    2002-01-01

    The adoption of a field-theoretical approach to problems arising in the framework of electrical insulation is discussed with reference to six main topics, which have been addressed over the last 30 years. These include uniform field electrodes, Green's differential equation, electrode surface...... roughness, induced charge, electrostatic probes, and partial discharge transients, together with several follow-on aspects. Each topic is introduced and thereafter the progress achieved through the use of a field-theoretical approach is reviewed. Because the topics cover a wide spectrum of conditions......, it is amply demonstrated that such an approach can lead to significant progress in many areas of electrical insulation....

  5. Spin-transport-phenomena in metals, semiconductors, and insulators

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, Matthias Klaus

    2012-07-19

    Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

  6. Vacuum insulation - Panel properties and building applications. HiPTI - High Performance Thermal Insulation - IEA/ECBCS Annex 39 - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Erb, M. (ed.)

    2005-12-15

    This paper takes a look at the properties of vacuum insulation panels (VIP) that have already been developed some time ago for use in appliances such as refrigerators and deep-freezers. Their insulation performance is a factor of five to ten times better than that of conventional insulation. The paper discusses the use of such panels in buildings to provide thin, highly-insulating constructions for walls, roofs and floors. The motivation for examining the applicability of high performance thermal insulation in buildings is discussed, including solutions where severe space limitations and other technical and aesthetic considerations exist. The use of nano-structured materials and laminated foils is examined and discussed. The questions arising from the use of such panels in buildings is discussed and the open questions and risks involved are examined. Finally, an outlook on the introduction of VIP technology is presented and quality assurance aspects are examined. This work was done within the framework of the Task 39 'High Performance Thermal Insulation' of the 'Energy Conservation in Buildings and Community Systems ECBCS' programme of the International Energy Agency IEA.

  7. Propagation Characteristics of Multilayer Hybrid Insulator-Metal-Insulator and Metal-Insulator-Metal Plasmonic Waveguides

    Directory of Open Access Journals (Sweden)

    M. Talafi Noghani

    2014-02-01

    Full Text Available Propagation characteristics of symmetrical and asymmetrical multilayer hybrid insulator-metal-insulator (HIMI and metal-insulator-metal (HMIM plasmonic slab waveguides are investigated using the transfer matrix method. Propagation length (Lp and spatial length (Ls are used as two figures of merit to qualitate the plasmonic waveguides. Symmetrical structures are shown to be more performant (having higher Lp and lower Ls, nevertheless it is shown that usage of asymmetrical geometry could compensate for the performance degradation in practically realized HIMI waveguides with different substrate materials. It is found that HMIM slab waveguide could support almost long-range subdiffraction plasmonic modes at dimensions lower than the spatial length of the HIMI slab waveguide.

  8. Electrical insulation for large multiaxis superconducting magnets

    International Nuclear Information System (INIS)

    Harvey, A.R.; Rinde, J.A.

    1975-01-01

    The selection of interturn and interlayer insulation for superconducting magnets is discussed. The magnet problems of the Baseball II device are described. Manufacture of the insulation and radiation damage are mentioned. A planned experimental program is outlined

  9. Emerging Trends in Topological Insulators and Topological ...

    Indian Academy of Sciences (India)

    /fulltext/reso/022/08/0787-0800. Keywords. Superconductor, quantum Hall effect, topological insulator, Majorana fermions. Abstract. Topological insulators are new class of materials which arecharacterized by a bulk band gap like ordinary ...

  10. Ultrathin nanoporous membranes for insulator-based dielectrophoresis

    Science.gov (United States)

    Mukaibo, Hitomi; Wang, Tonghui; Perez-Gonzalez, Victor H.; Getpreecharsawas, Jirachai; Wurzer, Jack; Lapizco-Encinas, Blanca H.; McGrath, James L.

    2018-06-01

    Insulator-based dielectrophoresis (iDEP) is a simple, scalable mechanism that can be used for directly manipulating particle trajectories in pore-based filtration and separation processes. However, iDEP manipulation of nanoparticles presents unique challenges as the dielectrophoretic force ({F}{{D}{{E}}{{P}}}) exerted on the nanoparticles can easily be overshadowed by opposing kinetic forces. In this study, a molecularly thin, SiN-based nanoporous membrane (NPN) is explored as a breakthrough technology that enhances {F}{{D}{{E}}{{P}}}. By numerically assessing the gradient of the electric field square ({{\

  11. Pipe-CUI-profiler: a portable nucleonic system for detecting corrosion under insulation (CUI) of steel pipes

    International Nuclear Information System (INIS)

    Jaafar Abdullah; Rasif Mohd Zain; Roslan Yahya

    2003-01-01

    Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. A portable nucleonic system that can be used to detect CUI without the need to remove the insulation materials, has been developed. The system is based on dual-beam gamma-ray absorption technique. It is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibre-glass or calcium silicate insulation to thicknesses of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting insulated pipes. This paper describes the new nucleonic system that has been developed. This paper describes the basic principle of the system and outlines its performance. (Author)

  12. Vacuum-insulated catalytic converter

    Science.gov (United States)

    Benson, David K.

    2001-01-01

    A catalytic converter has an inner canister that contains catalyst-coated substrates and an outer canister that encloses an annular, variable vacuum insulation chamber surrounding the inner canister. An annular tank containing phase-change material for heat storage and release is positioned in the variable vacuum insulation chamber a distance spaced part from the inner canister. A reversible hydrogen getter in the variable vacuum insulation chamber, preferably on a surface of the heat storage tank, releases hydrogen into the variable vacuum insulation chamber to conduct heat when the phase-change material is hot and absorbs the hydrogen to limit heat transfer to radiation when the phase-change material is cool. A porous zeolite trap in the inner canister absorbs and retains hydrocarbons from the exhaust gases when the catalyst-coated substrates and zeolite trap are cold and releases the hydrocarbons for reaction on the catalyst-coated substrate when the zeolite trap and catalyst-coated substrate get hot.

  13. On effective holographic Mott insulators

    Energy Technology Data Exchange (ETDEWEB)

    Baggioli, Matteo; Pujolàs, Oriol [Institut de Física d’Altes Energies (IFAE), Universitat Autònoma de Barcelona,The Barcelona Institute of Science and Technology,Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2016-12-20

    We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

  14. Improved DC Gun Insulator Assembly

    International Nuclear Information System (INIS)

    Neubauer, M.L.; Dudas, A.; Sah, R.; Poelker, M.; Surles-Law, K.E.L.

    2010-01-01

    Many user facilities such as synchrotron radiation light sources and free electron lasers require accelerating structures that support electric fields of 10-100 MV/m, especially at the start of the accelerator chain where ceramic insulators are used for very high gradient DC guns. These insulators are difficult to manufacture, require long commissioning times, and often exhibit poor reliability. Two technical approaches to solving this problem will be investigated. Firstly, inverted ceramics offer solutions for reduced gradients between the electrodes and ground. An inverted design will be presented for 350 kV, with maximum gradients in the range of 5-10 MV/m. Secondly, novel ceramic manufacturing processes will be studied, in order to protect triple junction locations from emission, by applying a coating with a bulk resistivity. The processes for creating this coating will be optimized to provide protection as well as be used to coat a ceramic with an appropriate gradient in bulk resistivity from the vacuum side to the air side of an HV standoff ceramic cylinder. Example insulator designs are being computer modelled, and insulator samples are being manufactured and tested

  15. On effective holographic Mott insulators

    International Nuclear Information System (INIS)

    Baggioli, Matteo; Pujolàs, Oriol

    2016-01-01

    We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

  16. Thermal insulation of fuel elements

    International Nuclear Information System (INIS)

    Dubrovcak, P.; Pec, V.; Pitonak, J.

    1978-01-01

    The claim of the invention concerns thermal insulation of fuel elements heated for measurement of uranium fuel physical properties. For this, layers of aluminium film and of glass fibre are wound onto the inner tube of the element cladding. The space between the inner and the outer tubes is evacuated and the tubes are spaced using spacer wires. (M.S.)

  17. Forming Refractory Insulation On Copper Wire

    Science.gov (United States)

    Setlock, J.; Roberts, G.

    1995-01-01

    Alternative insulating process forms flexible coat of uncured refractory insulating material on copper wire. Coated wire formed into coil or other complex shape. Wire-coating apparatus forms "green" coat on copper wire. After wire coiled, heating converts "green" coat to refractory electrical insulator. When cured to final brittle form, insulating material withstands temperatures above melting temperature of wire. Process used to make coils for motors, solenoids, and other electrical devices to be operated at high temperatures.

  18. Optimization design for SST-1 Tokamak insulators

    International Nuclear Information System (INIS)

    Zhang Yuanbin; Pan Wanjiang

    2012-01-01

    With the help of ANSYS FEA technique, high voltage and cryogenic proper- ties of the SST-1 Tokamak insulators were obtained, and the structure of the insulators was designed and modified by taking into account the simulation results. The simulation results indicate that the optimization structure has better high voltage insulating property and cryogenic mechanics property, and also can fulfill the qualification criteria of the SST-1 Tokamak insulators. (authors)

  19. Polyimide Foams Offer Superior Insulation

    Science.gov (United States)

    2012-01-01

    At Langley Research Center, Erik Weiser and his colleagues in the Advanced Materials and Processing Branch were working with a new substance for fabricating composites for use in supersonic aircraft. The team, however, was experiencing some frustration. Every time they tried to create a solid composite from the polyimide (an advanced polymer) material, it bubbled and foamed. It seemed like the team had reached a dead end in their research - until they had another idea. "We said, This isn t going to work for composites, but maybe we could make a foam out of it," Weiser says. "That was kind of our eureka moment, to see if we could go in a whole other direction. And it worked." Weiser and his colleagues invented a new kind of polyimide foam insulation they named TEEK. The innovation displayed a host of advantages over existing insulation options. Compared to other commercial foams, Weiser explains, polyimide foams perform well across a broad range of temperatures, noting that the NASA TEEK foams provide effective structural insulation up to 600 F and down to cryogenic temperatures. The foam does not burn or off-gas toxic fumes, and even at -423 F - the temperature of liquid hydrogen - the material stays flexible. The inventors could produce the TEEK foam at a range of densities, from 0.5 pounds per cubic foot up to 20 pounds per cubic foot, making the foam ideal for a range of applications, including as insulation for reusable launch vehicles and for cryogenic tanks and lines. They also developed a unique, friable balloon format for manufacturing the foam, producing it as hollow microspheres that allowed the foam to be molded and then cured into any desired shape - perfect for insulating pipes of different sizes and configurations. The team s originally unplanned invention won an "R&D 100" award, and a later form of the foam, called LaRC FPF-44 (Spinoff 2009), was named "NASA Invention of the Year" in 2007.

  20. Insulator applications in a Tokamak reactor

    International Nuclear Information System (INIS)

    Leger, D.

    1986-06-01

    Insulators, among which insulators ceramics, have great potential applications in fusion reactors. They will be used for all plasma-facing components as protection and, magnetic fusion devices being subject to large electrical currents flowing in any parts of the device, for their electrical insulating properties

  1. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  2. The net charge at interfaces between insulators

    International Nuclear Information System (INIS)

    Bristowe, N C; Littlewood, P B; Artacho, Emilio

    2011-01-01

    The issue of the net charge at insulating oxide interfaces is briefly reviewed with the ambition of dispelling myths of such charges being affected by covalency and related charge density effects. For electrostatic analysis purposes, the net charge at such interfaces is defined by the counting of discrete electrons and core ion charges, and by the definition of the reference polarization of the separate, unperturbed bulk materials. The arguments are illustrated for the case of a thin film of LaAlO 3 over SrTiO 3 in the absence of free carriers, for which the net charge is exactly 0.5e per interface formula unit, if the polarization response in both materials is referred to zero bulk values. Further consequences of the argument are extracted for structural and chemical alterations of such interfaces, in which internal rearrangements are distinguished from extrinsic alterations (changes of stoichiometry, redox processes), only the latter affecting the interfacial net charge. The arguments are reviewed alongside the proposal of Stengel and Vanderbilt (2009 Phys. Rev. B 80 241103) of using formal polarization values instead of net interfacial charges, based on the interface theorem of Vanderbilt and King-Smith (1993 Phys. Rev. B 48 4442-55). Implications for non-centrosymmetric materials are discussed, as well as for interfaces for which the charge mismatch is an integer number of polarization quanta. (viewpoint)

  3. Dielectric and Insulating Technology 2005 : Reviews & Forecasts

    Science.gov (United States)

    Okamoto, Tatsuki

    This article reports the state-of-art of TC-DEI ( Technical Committee of Dielectrics and Electrical Insulation of IEEJ) activites. The activiteis are basically based on the activites of 8-10 investigation committees under TC-DEI. Recent activites were categorized into three functions in this article and remarkable activity or trend for each category is mentioned as was done in the article of 2003. Thoese are activities on asset management (AI application and insulation diagnosis), activities on new insulating and functional materials (Nano composite) and activities on new insulation technology for power tansmission (high Tc superconducting cable insulation).

  4. Dielectric and Insulating Technology 2006 : Review & Forecast

    Science.gov (United States)

    Okamoto, Tatsuki

    This article reports the state-of-art of TC-DEI ( Technical Committee of Dielectrics and Electrical Insulation of IEEJ) activites. The activiteis are basically based on the activites of 8-10 investigation committees under TC-DEI. Recent activites were categorized into three functions in this article and remarkable activity or trend for each category is mentioned as was seen in the articles of 2005. Those are activities on asset management (AI application and insulation diagnosis), activities on new insulating and functional materials (Nano composite) and activities on new insulation technology for power tansmission (high Tc superconducting cable insulation).

  5. Measurements of the Secondary Electron Emission of Some Insulators

    CERN Document Server

    Bozhko, Y.; Hilleret, N.

    2013-01-01

    Charging up the surface of an insulator after beam impact can lead either to reverse sign of field between the surface and collector of electrons for case of thick sample or appearance of very high internal field for thin films. Both situations discard correct measurements of secondary electron emission (SEE) and can be avoided via reducing the beam dose. The single pulse method with pulse duration of order of tens microseconds has been used. The beam pulsing was carried out by means of an analog switch introduced in deflection plate circuit which toggles its output between "beam on" and "beam off" voltages depending on level of a digital pulse. The error in measuring the beam current for insulators with high value of SEE was significantly reduced due to the use for this purpose a titanium sample having low value of the SEE with DC method applied. Results obtained for some not coated insulators show considerable increase of the SEE after baking out at 3500C what could be explained by the change of work functi...

  6. Quantum fluctuations in insulating ferroelectrics

    International Nuclear Information System (INIS)

    Riseborough, Peter S.

    2010-01-01

    Graphical abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility. - Abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero-point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility.

  7. Multilayer Insulation Ascent Venting Model

    Science.gov (United States)

    Tramel, R. W.; Sutherlin, S. G.; Johnson, W. L.

    2017-01-01

    The thermal and venting transient experienced by tank-applied multilayer insulation (MLI) in the Earth-to-orbit environment is very dynamic and not well characterized. This new predictive code is a first principles-based engineering model which tracks the time history of the mass and temperature (internal energy) of the gas in each MLI layer. A continuum-based model is used for early portions of the trajectory while a kinetic theory-based model is used for the later portions of the trajectory, and the models are blended based on a reference mean free path. This new capability should improve understanding of the Earth-to-orbit transient and enable better insulation system designs for in-space cryogenic propellant systems.

  8. Chiral topological insulator of magnons

    Science.gov (United States)

    Li, Bo; Kovalev, Alexey A.

    2018-05-01

    We propose a magnon realization of 3D topological insulator in the AIII (chiral symmetry) topological class. The topological magnon gap opens due to the presence of Dzyaloshinskii-Moriya interactions. The existence of the topological invariant is established by calculating the bulk winding number of the system. Within our model, the surface magnon Dirac cone is protected by the sublattice chiral symmetry. By analyzing the magnon surface modes, we confirm that the backscattering is prohibited. By weakly breaking the chiral symmetry, we observe the magnon Hall response on the surface due to opening of the gap. Finally, we show that by changing certain parameters, the system can be tuned between the chiral topological insulator, three-dimensional magnon anomalous Hall, and Weyl magnon phases.

  9. Insulation assembly for electric machine

    Science.gov (United States)

    Rhoads, Frederick W.; Titmuss, David F.; Parish, Harold; Campbell, John D.

    2013-10-15

    An insulation assembly is provided that includes a generally annularly-shaped main body and at least two spaced-apart fingers extending radially inwards from the main body. The spaced-apart fingers define a gap between the fingers. A slot liner may be inserted within the gap. The main body may include a plurality of circumferentially distributed segments. Each one of the plurality of segments may be operatively connected to another of the plurality of segments to form the continuous main body. The slot liner may be formed as a single extruded piece defining a plurality of cavities. A plurality of conductors (extendable from the stator assembly) may be axially inserted within a respective one of the plurality of cavities. The insulation assembly electrically isolates the conductors in the electric motor from the stator stack and from other conductors.

  10. Thermal resistances of air in cavity walls and their effect upon the thermal insulation performance

    Energy Technology Data Exchange (ETDEWEB)

    Bekkouche, S.M.A.; Cherier, M.K.; Hamdani, M.; Benamrane, N. [Application of Renewable Energies in Arid and Semi Arid Environments /Applied Research Unit on Renewable Energies/ EPST Development Center of Renewable Energies, URAER and B.P. 88, ZI, Gart Taam Ghardaia (Algeria); Benouaz, T. [University of Tlemcen, BP. 119, Tlemcen R.p. 13000 (Algeria); Yaiche, M.R. [Development Center of Renewable Energies, CDER and B.P 62, 16340, Route de l' Observatoire, Bouzareah, Algiers (Algeria)

    2013-07-01

    The optimum thickness in cavity walls in buildings is determined under steady conditions; the heat transfer has been calculated according to ISO 15099:2003. Two forms of masonry units are investigated to conclude the advantage of high thermal emissivity. The paper presents also some results from a study of the thermal insulation performance of air cavities bounded by thin reflective material layer 'eta = 0.05'. The results show that the most economical cavity configuration depends on the thermal emissivity and the insulation material used.

  11. Secondary electron emission from insulators

    International Nuclear Information System (INIS)

    Kanaya, K.; Ono, S.; Ishigaki, F.

    1978-01-01

    The high yield of secondary electron emission from insulators due to electron bombardment may be the result of an increase of the depth of escape. The free-electron scattering theory is applied to the high energy of primary beams, but cannot be applied to the low energy of secondary escaping beams because of the large energy gap of the insulators. The plasmon loss with the valence electron is considered when the secondary electrons escape. Based on the energy retardation power formula of the penetration and energy loss of an electron probe into solid targets, secondary electron emissions from insulators are calculated from the assumptions that the distribution of the secondary electrons due to both incident and back-scattered electrons within the target is isotropic and that it follows the absorption law of the Lenard type. The universal yield-energy curve of the secondary electron emission, which is deduced as a function of three parameters such as ionisation potential, valence electron and the back-scattered coefficient in addition to the free-electron density effect, is found to be in good agreement with the experimental results. (author)

  12. Electronic reconstruction at the interface between the Mott insulator LaVO{sub 3} and the band insulator SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Stuebinger, Martin; Gabel, Judith; Gagel, Philipp; Sing, Michael; Claessen, Ralph [Universitaet Wuerzburg, Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), 97074 Wuerzburg (Germany)

    2016-07-01

    Akin to the well known oxide heterostructure LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV{sup 3+}O{sub 3} (LVO) and the non-polar band insulator STO. Since LaV{sup 3+}O{sub 3} tends to overoxidize to the thermodynamically more favourable LaV{sup 5+}O{sub 4} phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.

  13. Effects of insulation on potted superconducting coils

    International Nuclear Information System (INIS)

    Zeller, A.F.; DeKamp, J.C.; Magsig, C.T.; Nolen, J.A.; McInturff, A.D.

    1989-01-01

    Test coils using identical wire but with either Formvar or Polyesterimid insulation were fabricated to determine the effects of insulation on training behavior. It was found that the type of insulation did not affect the training behavior. While considerable attention has been paid to epoxy formulations used for superconducting coils, little study has been devoted to the effects of the wire insulation on training behavior. If the insulation does not bind well with the epoxy, the wires will not be held securely in place, and training will be required to make the coil operate at its design limit. In fact, the coil may never reach its design current, showing considerable degredation. Conversely, if the epoxy-insulation reaction is to soften or weaken the insulation, then shorts and/or training may result. The authors have undertaken a study of the effects of the insulation on potted coils wet wound with Stycast 2850 FT epoxy. The wire was insulated with one of two insulting varnishes: Formvar (a polyvinyl formal resin) or Polyesterimid (a phenolic resin). Formvar is the standard insulation in the United States while Polyesterimid the European standard

  14. Insulator-insulator and insulator-conductor transitions in the phase diagram of aluminium trichloride

    Directory of Open Access Journals (Sweden)

    Romina Ruberto

    2009-01-01

    Full Text Available We report a classical computer-simulation study of the phase diagram of AlCl3 in the pressure-temperature (p, T plane, showing (i that melting from a layered crystal structure occurs into a molecular liquid at low (p, T and into a dissociated ionic liquid at high (p, T, and (ii that a broad transition from a molecular insulator to an ionic conductor takes place in the liquid state.

  15. Insulation Progress since the Mid-1950s

    Science.gov (United States)

    Timmerhaus, K. D.

    Storage vessel and cryostat design for modern cryogenic systems has become rather routine as the result of the wide use of and application of cryogenic fluids. Such vessels for these fluids range in size from 1 L flasks used in the laboratory for liquid nitrogen to the more than 200,000 m3 double-walled tanks used for temporary storage of liquefied natural gas before being transported overseas to their final destination. These storage vessels for cryogenic fluids range in type from low-performance containers insulated with rigid foam or fibrous insulation to high-performance containers insulated with evacuated multilayer insulations. The overriding factors in the type of container selected normally are of economics and safety. This paper will consider various insulation concepts used in such cryogenic storage systems and will review the progress that has been made over the past 50 years in these insulation systems.

  16. Handleable shapes of thermal insulation material

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, J. T.

    1989-01-17

    Handleable and machineable shapes of thermal insulation material are made by compacting finely divided thermal insulation material into the cells of a reinforcing honeycomb insulation material into the cells of a reinforcing honeycomb structure. The finely divided thermal insulation material may be, for example, silica aerogel, pyrogenic silica, carbon black, silica gel, volatilised silica, calcium silicate, vermiculate or perlite, or finely divided metal oxides such as alumina or titania. The finely divided thermal insulation material may include an infra-red opacifier and/or reinforcing fibres. The reinforcing honeycomb structure may be made from, for example, metals such as aluminium foil, inorganic materials such as ceramics, organic materials such as plastics materials, woven fabrics or paper. A rigidiser may be employed. The shapes of thermal insulation material are substantially rigid and may be machines, for example by mechanical or laser cutting devices, or may be formed, for example by rolling, into curved or other shaped materials. 12 figs.

  17. Hydrogen storage in insulated pressure vessels

    Energy Technology Data Exchange (ETDEWEB)

    Aceves, S.M.; Garcia-Villazana, O. [Lawrence Livermore National Lab., CA (United States)

    1998-08-01

    Insulated pressure vessels are cryogenic-capable pressure vessels that can be fueled with liquid hydrogen (LH{sub 2}) or ambient-temperature compressed hydrogen (CH{sub 2}). Insulated pressure vessels offer the advantages of liquid hydrogen tanks (low weight and volume), with reduced disadvantages (lower energy requirement for hydrogen liquefaction and reduced evaporative losses). This paper shows an evaluation of the applicability of the insulated pressure vessels for light-duty vehicles. The paper shows an evaluation of evaporative losses and insulation requirements and a description of the current analysis and experimental plans for testing insulated pressure vessels. The results show significant advantages to the use of insulated pressure vessels for light-duty vehicles.

  18. ASRM case insulation design and development

    Science.gov (United States)

    Bell, Matthew S.; Tam, William F. S.

    1992-10-01

    This paper describes the achievements made on the Advanced Solid Rocket Motor (ASRM) case insulation design and development program. The ASRM case insulation system described herein protects the metal case and joints from direct radiation and hot gas impingement. Critical failure of solid rocket systems is often traceable to failure of the insulation design. The wide ranging accomplishments included the development of a nonasbestos insulation material for ASRM that replaced the existing Redesigned Solid Rocket Motor (RSRM) asbestos-filled nitrile butadiene rubber (NBR) along with a performance gain of 300 pounds, and improved reliability of all the insulation joint designs, i.e., segmented case joint, case-to-nozzle and case-to-igniter joint. The insulation process development program included the internal stripwinding process. This process advancement allowed Aerojet to match to exceed the capability of other propulsion companies.

  19. The numerical model of multi-layer insulation with a defined wrapping pattern immersed in superfluid helium

    Science.gov (United States)

    Malecha, Ziemowit; Lubryka, Eliza

    2017-11-01

    The numerical model of thin layers, characterized by a defined wrapping pattern can be a crucial element of many computational problems related to engineering and science. A motivating example is found in multilayer electrical insulation, which is an important component of superconducting magnets and other cryogenic installations. The wrapping pattern of the insulation can significantly affect heat transport and the performance of the considered instruments. The major objective of this study is to develop the numerical boundary conditions (BC) needed to model the wrapping pattern of thin insulation. An example of the practical application of the proposed BC includes the heat transfer of Rutherford NbTi cables immersed in super-fluid helium (He II) across thin layers of electrical insulation. The proposed BC and a mathematical model of heat transfer in He II are implemented in the open source CFD toolbox OpenFOAM. The implemented mathematical model and the BC are compared in the experiments. The study confirms that the thermal resistance of electrical insulation can be lowered by implementing the proper wrapping pattern. The proposed BC can be useful in the study of new patterns for wrapping schemes. The work has been supported by statutory funds from Polish Ministry for Science and Higher Education for the year of 2017.

  20. Polyester Apparel Cutting Waste as Insulation Material

    OpenAIRE

    Trajković, Dušan; Jordeva, Sonja; Tomovska, Elena; Zafirova, Koleta

    2017-01-01

    Polyester waste is the dominant component of the clothing industry waste stream, yet its recycling in this industry is rarely addressed. This paper proposes using polyester cutting waste as an insulation blanket for roofing and buildings’ internal walls in order to reduce environmental pollution. The designed textile structures used waste cuttings from different polyester fabrics without opening the fabric to fibre. Thermal insulation, acoustic insulation, fire resistance and biodegradation o...

  1. Radiation-resistant plastic insulators

    International Nuclear Information System (INIS)

    Sturm, B.J.; Parkinson, W.W.

    1975-01-01

    A high molecular weight organic composition useful as an electric insulator in radiation fields is provided and comprises normally a solid polymer of an organic compound having a specific resistance greater than 10 19 ohm-cm and containing phenyl groups and 1 to 7.5 weight percent of a high molecular weight organic phosphite. In one embodiment the composition comprises normally solid polystyrene having 7.5 weight percent tris-β-chloroethyl phosphite as an additive; the composition exhibited an increase in the post-irradiation resistivity of over an order of magnitude over the post-irradiation resistivity of pure polystyrene. (Patent Office Record)

  2. Processing of insulators and semiconductors

    Science.gov (United States)

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  3. Characterization of Microporous Insulation, Microsil

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, R. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-06-15

    Microsil microporous insulation has been characterized by Lawrence Livermore National Laboratory for possible use in structural and thermal applications in the DPP-1 design. Qualitative test results have provided mechanical behavioral characteristics for DPP-1 design studies and focused on the material behavioral response to being crushed, cyclically loaded, and subjected to vibration for a confined material with an interference fit or a radial gap. Quantitative test results have provided data to support the DPP-1 FEA model analysis and verification and were used to determine mechanical property values for the material under a compression load. The test results are documented within this report.

  4. Measurement of full-field deformation induced by a dc electrical field in organic insulator films

    Directory of Open Access Journals (Sweden)

    Boudou L.

    2010-06-01

    Full Text Available Digital image correlation method (DIC using the correlation coefficient curve-fitting for full-field surface deformation measurements of organic insulator films is investigated in this work. First the validation of the technique was undertaken. The computer-generated speckle images and the measurement of coefficient of thermal expansion (CTE of aluminium are used to evaluate the measurement accuracy of the technique. In a second part the technique is applied to measure the mechanical deformation induced by electrical field application to organic insulators. For that Poly(ethylene naphthalene 2,6-dicarboxylate (PEN thin films were subjected to DC voltage stress and DIC provides the full-field induced deformations of the test films. The obtained results show that the DIC is a practical and robust tool for better comprehension of mechanical behaviour of the organic insulator films under electrical stress.

  5. Method of manufacturing a thermally insulating body

    Energy Technology Data Exchange (ETDEWEB)

    McWilliams, J.A.; Morgan, D.E.; Jackson, J.D.

    1988-10-11

    A method of manufacturing a microporous thermally insulating body comprises mixing together a finely divided microporous insulating material such as silica aerogel or pyrogenic silica and a solid ammonia-generating compound in particulate form, and compressing the mixture to form a thermally insulating body. The ammonia-generating compound is dispersed evenly throughout the insulating material and may comprise, for example, ammonium carbonate, ammonium acetate or urea. Preferably, the ammonia-generating compound comprises a mixture of about one third by weight of ammonium carbonate and about two thirds by weight of ammonium bicarbonate together with a small proportion of magnesium oxide. Experiments are described which illustrate the manufacturing process. 6 tabs.

  6. Dielectric and Insulating Technology 2004 : Review & Forecast

    Science.gov (United States)

    Okamoto, Tatsuki

    This article reports the state-of-art of DEIS activites. DEIS activiteis are basically based on the activites of 8-10 investigation committees’ under DEIS committee. Recent DEIS activites are categlized into three functions in this article and remarkable activity or trend of each category is mentioned. Those are activities on insulation diagnosis (AI application and asset management), activities on new insulation technology for power tansmission (high Tc super conducting cable insulation and all solid sinulated substation), and activities on new insulating materials (Nanocomposite).

  7. Process insulation. Isolation thermique des equipements

    Energy Technology Data Exchange (ETDEWEB)

    1987-01-01

    A manual is presented to assist managers and operating personnel to recognize industrial energy management opportunities, and provides mathematical equations, general information on proven techniques and technology, and examples. It deals with process insulation, focusing on the insulation of mechanical systems such as piping, process vessels, equipment, and ductwork. The manual describes the effects of insulation materials; commonly encountered types of insulation, coverings and protective finishes as well as common applications; energy management opportunities, divided into housekeeping, low cost, and retrofit; and includes worked examples of each. Includes glossary. 17 figs., 8 tabs.

  8. Low Permeability Polyimide Insulation, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Resodyn Technologies proposes a new technology that enables the application of polyimide based cryogenic insulation with low hydrogen permeability. This effort...

  9. Thin Places

    OpenAIRE

    Lockwood, Sandra Elizabeth

    2013-01-01

    This inquiry into the three great quests of the twentieth century–the South Pole, Mount Everest, and the Moon–examines our motivations to venture into these sublime, yet life-taking places. The Thin Place was once the destination of the religious pilgrim seeking transcendence in an extreme environment. In our age, the Thin Place quest has morphed into a challenge to evolve beyond the confines of our own physiology; through human ingenuity and invention, we reach places not meant to accommod...

  10. Deposition of metal chalcogenide thin films by successive ionic layer

    Indian Academy of Sciences (India)

    ) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, ...

  11. New Light on the Metal-Insulator Transition in VO2: A Terahertz Perspective

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2005-01-01

    We investigate the metal-insulator (MI) transition in vanadium dioxide (VO2), thin films with Terahertz Time-Domains Spectroscopy (THz-TDS). The capability of detecting both amplitude and phase of the transmission characteristics as the phase of the transmitted THz signal switches at a markedly...

  12. Lateral topological crystalline insulator heterostructure

    Science.gov (United States)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  13. Thermal insulation properties of walls

    Directory of Open Access Journals (Sweden)

    Zhukov Aleksey Dmitrievich

    2014-05-01

    Full Text Available Heat-protective qualities of building structures are determined by the qualities of the used materials, adequate design solutions and construction and installation work of high quality. This rule refers both to the structures made of materials similar in their structure and nature and mixed, combined by a construction system. The necessity to ecaluate thermal conductivity is important for a product and for a construction. Methods for evaluating the thermal protection of walls are based on the methods of calculation, on full-scale tests in a laboratory or on objects. At the same time there is a reason to believe that even deep and detailed calculation may cause deviation of the values from real data. Using finite difference method can improve accuracy of the results, but it doesn’t solve all problems. The article discusses new approaches to evaluating thermal insulation properties of walls. The authors propose technique of accurate measurement of thermal insulation properties in single blocks and fragments of walls and structures.

  14. Topological Insulator Nanowires and Nanoribbons

    KAUST Repository

    Kong, Desheng

    2010-01-13

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.

  15. Surface plasmon on topological insulator/dielectric interface enhanced ZnO ultraviolet photoluminescence

    Directory of Open Access Journals (Sweden)

    Zhi-Min Liao

    2012-06-01

    Full Text Available It has recently been predicted that the surface plasmons are allowed to exist on the interface between a topological insulator and vacuum. Surface plasmons can be employed to enhance the optical emission from various illuminants. Here, we study the photoluminescence properties of the ZnO/Bi2Te3 hybrid structures. Thin flakes of Bi2Te3, a typical three-dimensional topological insulator, were prepared on ZnO crystal surface by mechanical exfoliation method. The ultraviolet emission from ZnO was found to be enhanced by the Bi2Te3 thin flakes, which was attributed to the surface plasmon – photon coupling at the Bi2Te3/ZnO interface.

  16. Evaluation of Experimental Parameters in the Accelerated Aging of Closed-Cell Foam Insulation

    Energy Technology Data Exchange (ETDEWEB)

    Stovall, Therese K [ORNL; Vanderlan, Michael [ORNL; Atchley, Jerald Allen [ORNL

    2012-12-01

    The thermal conductivity of many closed-cell foam insulation products changes over time as production gases diffuse out of the cell matrix and atmospheric gases diffuse into the cells. Thin slicing has been shown to be an effective means of accelerating this process in such a way as to produce meaningful results. Efforts to produce a more prescriptive version of the ASTM C1303 standard test method led to the ruggedness test described here. This test program included the aging of full size insulation specimens for time periods of five years for direct comparison to the predicted results. Experimental parameters under investigation include: slice thickness, slice origin (at the surface or from the core of the slab), thin slice stack composition, product facings, original product thickness, product density, and product type. The test protocol has been completed and this report provides a detailed evaluation of the impact of the test parameters on the accuracy of the 5-year thermal conductivity prediction.

  17. Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

    Science.gov (United States)

    Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

    2018-06-01

    Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

  18. Thin book

    DEFF Research Database (Denmark)

    En lille bog om teater og organisationer, med bidrag fra 19 teoretikere og praktikere, der deltog i en "Thin Book Summit" i Danmark i 2005. Bogen bidrager med en state-of-the-art antologi om forskellige former for samarbejde imellem teater og organisationer. Bogen fokuserer både på muligheder og...

  19. Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

    OpenAIRE

    Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F.C.; van der Zant, H.S.J.

    2016-01-01

    We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the ra...

  20. Labeling and advertising of home insulation. Final staff report to the Federal Trade Commission and proposed trade regulation rule (16 CFR Part 460)

    Energy Technology Data Exchange (ETDEWEB)

    1978-07-01

    Because insulation is a very difficult product for uniformed consumers to evaluate, there has been broad support for a rule requiring disclosure of information facilitating choices among insulation products. With information that the Recommended Rule will require, consumers will be able to compare the thermal properties of various types of insulation and make the best purchases. The FTC undertook this rulemaking effort and proposed a Rule on November 18, 1977. Hearings were conducted. Approximately 50 witnesses representing insulation manufacturers, contractors, trade associations, consumer and environmental groups, and state and Federal government agencies attended. As the record shows, without the Rule, some insulation industry members have failed to base R-value claims on tests or have extrapolated values from too-thin samples. Neither labels nor ads disclose R values; most do not explain R value; and the industry is not telling consumers about factors that often reduce insulation R values. Consumers are seldom told about performance characteristics of individual types of insulation. They are not advised that insulation is not always a good investment, or that their money might be more wisely spent on other conservation measures. The Rule addresses all of these problems. All aspects of the insulation industry and some consumer characteristics are summarized. (MCW)

  1. Topological Insulators and Superconductors for Innovative Devices

    Science.gov (United States)

    2015-03-20

    Final 3. DATES COVERED (From - To) 20120321 - 20150320 4. TITLE AND SUBTITLE Topological insulators and superconductors for innovative...locking, which hold promise for various innovative devices. Similarly, topological superconductors are associated with exotic surface states, which...298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18 Final Report Title: Topological Insulators and Superconductors for Innovative Devices

  2. Thermal insulation of high temperature reactors

    International Nuclear Information System (INIS)

    Cornille, Y.

    1975-01-01

    Operating conditions of HTR thermal insulation are given and heat insulators currently developed are described (fibers kept in position by metallic structures). For future applications and higher temperatures, research is directed towards solutions using ceramics or associating fibers and ceramics [fr

  3. Quantitative analysis of thermal insulation coatings

    DEFF Research Database (Denmark)

    Kiil, Søren

    2014-01-01

    This work concerns the development of simulation tools for mapping of insulation properties of thermal insulation coatings based on selected functional filler materials. A mathematical model, which includes the underlying physics (i.e. thermal conductivity of a heterogeneous two-component coating...

  4. Study of thermal conductivity of multilayer insulation

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, D; Sundaram, S; Nath, G K; Sethuram, N P; Chandrasekharan, T; Varadarajan, T G [Heavy Water Division, Bhabha Atomic Research Centre, Mumbai (India)

    1994-06-01

    This paper presents experimental determination of the apparent thermal conductivity of multilayer insulation for a cryogenic system. The variation of thermal conductivity with residual gas pressure is studied and the optimum vacuum for good insulating performance is determined. Evaporation loss technique for heat-inleak determination is employed. (author). 3 refs., 3 figs.

  5. Insulation systems for superconducting transmission cables

    DEFF Research Database (Denmark)

    Tønnesen, Ole

    1996-01-01

    the electrical insulation is placed outside both the superconducting tube and the cryostat. The superconducting tube is cooled by liquid nitrogen which is pumped through the hollow part of the tube.2) The cryogenic dielectric design, where the electrical insulation is placed inside the cryostat and thus is kept...

  6. Study of thermal conductivity of multilayer insulation

    International Nuclear Information System (INIS)

    Dutta, D.; Sundaram, S.; Nath, G.K.; Sethuram, N.P.; Chandrasekharan, T.; Varadarajan, T.G.

    1994-01-01

    This paper presents experimental determination of the apparent thermal conductivity of multilayer insulation for a cryogenic system. The variation of thermal conductivity with residual gas pressure is studied and the optimum vacuum for good insulating performance is determined. Evaporation loss technique for heat-inleak determination is employed. (author)

  7. Aharonov–Bohm interference in topological insulator nanoribbons

    KAUST Repository

    Peng, Hailin; Lai, Keji; Kong, Desheng; Meister, Stefan; Chen, Yulin; Qi, Xiao-Liang; Zhang, Shou-Cheng; Shen, Zhi-Xun; Cui, Yi

    2009-01-01

    Topological insulators represent unusual phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport

  8. Modeling of Dynamic Responses in Building Insulation

    Directory of Open Access Journals (Sweden)

    Anna Antonyová

    2015-10-01

    Full Text Available In this research a measurement systemwas developedfor monitoring humidity and temperature in the cavity between the wall and the insulating material in the building envelope. This new technology does not disturb the insulating material during testing. The measurement system can also be applied to insulation fixed ten or twenty years earlier and sufficiently reveals the quality of the insulation. A mathematical model is proposed to characterize the dynamic responses in the cavity between the wall and the building insulation as influenced by weather conditions.These dynamic responses are manifested as a delay of both humidity and temperature changes in the cavity when compared with the changes in the ambient surrounding of the building. The process is then modeled through numerical methods and statistical analysis of the experimental data obtained using the new system of measurement.

  9. Topological Insulators Dirac Equation in Condensed Matters

    CERN Document Server

    Shen, Shun-Qing

    2012-01-01

    Topological insulators are insulating in the bulk, but process metallic states around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geometry. This book, Topological insulators, presents a unified description of topological insulators from one to three dimensions based on the modified Dirac equation. A series of solutions of the bound states near the boundary are derived, and the existing conditions of these solutions are described. Topological invariants and their applications to a variety of systems from one-dimensional polyacetalene, to two-dimensional quantum spin Hall effect and p-wave superconductors, and three-dimensional topological insulators and superconductors or superfluids are introduced, helping readers to better understand this fascinating new field. This book is intended for researchers and graduate students working in the field of topological in...

  10. Foam insulated transfer line test report

    International Nuclear Information System (INIS)

    Squier, D.M.

    1994-06-01

    Miles of underground insulated piping will be installed at the Hanford site to transfer liquid waste. Significant cost savings may be realized by using pre-fabricated polyurethane foam insulated piping. Measurements were made on sections of insulated pipe to determine the insulation's resistance to axial expansion of the pipe, the force required to compress the foam in the leg of an expansion loop and the time required for heat up and cool down of a buried piping loop. These measurements demonstrated that the peak axial force increases with the amount of adhesion between the encasement pipe and the insulation. The compressive strength of the foam is too great to accommodate the thermal growth of long straight pipe sections into the expansion loops. Mathematical models of the piping system's thermal behavior can be refined by data from the heated piping loop

  11. Insulated InP (100) semiconductor by nano nucleus generation in pure water

    Science.gov (United States)

    Ghorab, Farzaneh; Es'haghi, Zarrin

    2018-01-01

    Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

  12. Luminescence from metals and insulators

    International Nuclear Information System (INIS)

    Crawford, O.H.

    1985-01-01

    The term luminescence is normally applied to light emission that is not explainable by the mechanisms discussed by the other speakers in this meeting. Specifically, it is not transition radiation, surface plasmon radiation, or bremsstrahlung. One normally thinks of luminescence as arising from one-electron transitions within a medium. This talk consists of an overview of luminescence from condensed matter under irradiation by either energetic particles or photons. The author begins with organic molecules, where luminescence is best understood, and then discusses inorganic insulators and metals. Finally, the dependence of yield upon projectile species and velocity is discussed, and predictions are made concerning the relative effectiveness of electrons, protons, and hydrogen atoms in exciting luminescence

  13. Handbook of Thermal Insulation Applications.

    Science.gov (United States)

    1983-01-01

    Wiuppuoror *tIe beamsWiefag ln~ td ~oair ilmstool beams Plate 18. Metal Building Ceilings - A 18b: Fir* hataird rathge may limit the use of foam Insulation...RFCTANGUI.AR SOL TD A = 2(WxL+LxH+HxW) B V = WxLxH H L TRAPEZOID A 2 (A + B) x H A CONE A -n xRxS+ i xR 2 B V =( /3)x R2 x H TRIANGLE A BxH A- 2 CYLI NDER H 2...FABRICATIIG RECTANGULAR HEATING AND COOLING DUCTWORK. FIBERGLAS DUCT BOARD OWENS-CORNING FIBERGLAS CORP GLASS FIBER RIGID BOARD WITH ALUMINUM 4bD FOIL VAPOR

  14. Electrical resistivity study of insulators

    International Nuclear Information System (INIS)

    Liesegang, J.; Senn, B.C.; Holcombe, S.R.; Pigram, P.J.

    1998-01-01

    Full text: Conventional methods of electrical resistivity measurement of dielectric materials involve the application of electrodes to a sample whereby a potential is applied and a current through the material is measured. Although great care and ingenuity has often been applied to this technique, the recorded values of electrical resistivity (p), especially for insulator materials, show great disparity. In earlier work by the authors, a method for determining surface charge decay [Q(t)], using a coaxial cylindrical capacitor arrangement interfaced to a personal computer, was adapted to allow the relatively straightforward measurement of electrical resistivity in the surface region of charged insulator materials. This method was used to develop an ionic charge transport theory, based on Mott-Gurney diffusion to allow a greater understanding into charge transport behaviour. This theory was extended using numerical analysis to produce a two dimensional (2-D) computational model to allow the direct comparison between experimental and theoretical charge decay data. The work also provided a means for the accurate determination of the diffusion coefficient (D) and the layer of thickness of surface charge (Δz) on the sample. The work outlined here involves an extension of the theoretical approach previously taken, using a computational model based more closely on the 3-D experimental set-up, to reinforce the level of confidence in the results achieved for the simpler 2-D treatment. Initially, a 3-D rectangular box arrangement similar to the experimental set-up was modelled and a theoretical and experimental comparison of voltage decay results made. This model was then transferred into cylindrical coordinates to allow it to be almost identical to the experiment and again a comparison made. In addition, theoretical analysis of the coupled non-linear partial differential equations governing the charge dissipation process has led to a simplification involving directly, the

  15. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  16. Status of magnetically-insulated power transmission theory

    Energy Technology Data Exchange (ETDEWEB)

    Mendel, Jr, C W [Sandia Labs., Albuquerque, NM (United States)

    1997-12-31

    The theory of magnetically-insulated power flow has improved dramatically over the last two decades. Theoretical improvements included a complete general kinetic theory that involved distributions of electrons based on quasi-conserved canonical variables and was used to study flow stability and to analyze simulations and pulsers with voltage adders. The status of theory at this time allowed us to understand many features of these flows, but did not allow detailed analysis for design and data interpretation. Recent theoretical advances have drastically changed this situation. Two recent static models based on layered flows have allowed us to understand and to improve power coupling in voltage adders, current adders, plasma opening switches and in systems where the vacuum impedance varies along the flow. A dynamic model based upon electrons flowing in one or more thin layers has permitted detailed self-consistent time-dependent calculations which include electron flow. This model accurately predicts experimental and simulation data. (author). 3 figs.

  17. Labeling and advertising of home insulation

    Energy Technology Data Exchange (ETDEWEB)

    1978-07-01

    This staff report, prepared by the F.T.C.'s Bureau of Consumer Protection for Commission review, includes recommendations as to the final form of a trade regulation rule relating to the labeling and advertising of home insulation. Because of marketing abuses which accompanied the rising demand for home insulation, there has been broad support for a rule requiring information disclosures to help purchasers of home insulation to make an informed decision. The Commission, to provide such rule as quickly as possible, undertook its rulemaking proceeding under its new expedited rulemaking procedure. The rule was proposed on November 18, 1977, and, following a two-month period for written comments, four weeks of hearings were held in Washington, D.C. in February 1978. The record, contributed to by a variety of interests, shows that consumers do not know how to shop for home insulation. The staff-recommended rule, among other things, would require that insulation be tested and R-values (a measure of insulation's ability to retain heat) disclosed on labels and in advertising. To facilitate comparison shopping, the industry would also be required to furnish consumers with fact sheets describing, on a product-to-product basis, factors that can reduce the R-value of insulation.

  18. Slab edge insulating form system and methods

    Science.gov (United States)

    Lee, Brain E [Corral de Tierra, CA; Barsun, Stephan K [Davis, CA; Bourne, Richard C [Davis, CA; Hoeschele, Marc A [Davis, CA; Springer, David A [Winters, CA

    2009-10-06

    A method of forming an insulated concrete foundation is provided comprising constructing a foundation frame, the frame comprising an insulating form having an opening, inserting a pocket former into the opening; placing concrete inside the foundation frame; and removing the pocket former after the placed concrete has set, wherein the concrete forms a pocket in the placed concrete that is accessible through the opening. The method may further comprise sealing the opening by placing a sealing plug or sealing material in the opening. A system for forming an insulated concrete foundation is provided comprising a plurality of interconnected insulating forms, the insulating forms having a rigid outer member protecting and encasing an insulating material, and at least one gripping lip extending outwardly from the outer member to provide a pest barrier. At least one insulating form has an opening into which a removable pocket former is inserted. The system may also provide a tension anchor positioned in the pocket former and a tendon connected to the tension anchor.

  19. Electrical insulator requirements for mirror fusion reactors

    International Nuclear Information System (INIS)

    Condit, R.H.; Van Konynenburg, R.A.

    1977-01-01

    The requirements for mirror fusion electrical insulators are discussed. Insulators will be required at the neutral beam injectors, injector power supplies, direct converters, and superconducting magnets. Insulators placed at the neutral beam injectors will receive the greatest radiation exposure, 10 14 to 10 16 neutrons/m 2 .s and 0.3 to 3 Gy/s (10 5 to 10 6 R/h) of gamma rays, with shielding. Direct converter insulators may receive the highest temperature (up to 1300 0 K), but low voltage holding requirements. Insulators made from organic materials (e.g., plastics) for the magnet coils may be satisfactory. Immediate conductivity increases of all insulators result from gamma irradiation. With an upper limit to gamma flux exposures of 300 Gy/s in a minimally shielded region, the conductivity could reach 10 -6 S/m. Damage from neutron irradiation may not be serious during several years' exposure. Surface changes in ceramics at the neutral beam injector may be serious. The interior of the injector will contain atomic hydrogen, and sputtering may transfer material away from or onto the ceramic insulators. Unknown and potentially damaging interactions between irradiation, electric fields, temperature gradients, cycling of temperature, surface and joint reactions, sputtering, polarization, and electrotransport in the dielectrics are of concern. Materials research to deal with these problems is needed

  20. Excavationless Exterior Foundation Insulation Field Study

    Energy Technology Data Exchange (ETDEWEB)

    Schirber, T.; Mosiman, G.; Ojczyk, C.

    2014-10-01

    Building science research supports installing exterior (soil side) foundation insulation as the optimal method to enhance the hygrothermal performance of new homes. With exterior foundation insulation, water management strategies are maximized while insulating the basement space and ensuring a more even temperature at the foundation wall. However, such an approach can be very costly and disruptive when applied to an existing home, requiring deep excavation around the entire house. The NorthernSTAR Building America Partnership team implemented an innovative, minimally invasive foundation insulation upgrade technique on an existing home. The approach consisted of using hydrovac excavation technology combined with a liquid insulating foam. The team was able to excavate a continuous 4" wide by 4' to 5' deep trench around the entire house, 128 linear feet, except for one small part under the stoop that was obstructed with concrete debris. The combination pressure washer and vacuum extraction technology also enabled the elimination of large trenches and soil stockpiles normally produced by backhoe excavation. The resulting trench was filled with liquid insulating foam, which also served as a water-control layer of the assembly. The insulation was brought above grade using a liquid foam/rigid foam hybrid system and terminated at the top of the rim joist. Cost savings over the traditional excavation process ranged from 23% to 50%. The excavationless process could result in even greater savings since replacement of building structures, exterior features, utility meters, and landscaping would be minimal or non-existent in an excavationless process.

  1. Excavationless Exterior Foundation Insulation Field Study

    Energy Technology Data Exchange (ETDEWEB)

    Schirber, T. [NorthernSTAR, Minneaplolis, MN (United States); Mosiman, G. [NorthernSTAR, Minneaplolis, MN (United States); Ojczyk, C. [NorthernSTAR, Minneaplolis, MN (United States)

    2014-09-01

    Building science research supports installing exterior (soil side) foundation insulation as the optimal method to enhance the hygrothermal performance of new homes. With exterior foundation insulation, water management strategies are maximized while insulating the basement space and ensuring a more even temperature at the foundation wall. However, such an approach can be very costly and disruptive when applied to an existing home, requiring deep excavation around the entire house. The NorthernSTAR Building America Partnership team implemented an innovative, minimally invasive foundation insulation upgrade technique on an existing home. The approach consisted of using hydrovac excavation technology combined with liquid insulating foam. The team was able to excavate a continuous 4 inches wide by 4 feet to 5 feet deep trench around the entire house, 128 linear feet, except for one small part under the stoop that was obstructed with concrete debris. The combination pressure washer and vacuum extraction technology also enabled the elimination of large trenches and soil stockpiles normally produced by backhoe excavation. The resulting trench was filled with liquid insulating foam, which also served as a water-control layer of the assembly. The insulation was brought above grade using a liquid foam/rigid foam hybrid system and terminated at the top of the rim joist. Cost savings over the traditional excavation process ranged from 23% to 50%. The excavationless process could result in even greater savings since replacement of building structures, exterior features, utility meters, and landscaping would be minimal or non-existent in an excavationless process.

  2. Estimation of thermal insulation performance in multi-layer insulator for liquid helium pipe

    International Nuclear Information System (INIS)

    Shibanuma, Kiyoshi; Kuriyama, Masaaki; Shibata, Takemasa

    1991-01-01

    For a multi-layer insulator around the liquid helium pipes for cryopumps of JT-60 NBI, a multi-layer insulator composed of 10 layers, which can be wound around the pipe at the same time and in which the respective layers are in concentric circles by shifting them in arrangement, has been developed and tested. As the result, it was shown that the newly developed multi-layer insulator has better thermal insulation performance than the existing one, i.e. the heat load of the newly developed insulator composed of 10 layers was reduced to 1/3 the heat load of the existing insulator, and the heat leak at the joint of the insulator in longitudinal direction of the pipe was negligible. In order to clarify thermal characteristics of the multi-layer insulator, the heat transfer through the insulator has been analyzed considering the radiation heat transfer by the netting spacer between the reflectors, and the temperature dependence on the emissivities and the heat transmission coefficients of these two components of the insulator. The analytical results were in good agreements with the experimental ones, so that the analytical method was shown to be valid. Concerning the influence of the number of layers and the layer density on the insulation performance of the insulator, analytical results showed that the multi-layer insulator with the number of layer about N = 20 and the layer density below 2.0 layer/mm was the most effective for the liquid helium pipe of a JT-60 cryopump. (author)

  3. Measure Guideline. Hybrid Foundation Insulation Retrofits

    Energy Technology Data Exchange (ETDEWEB)

    Ueno, K. [Building Science Corporation, Somerville, MA (United States); Lstiburek, J. [Building Science Corporation, Somerville, MA (United States)

    2012-05-01

    This measure guideline provides recommendations for designs and variations for retrofit hybrid assemblies in improving interior foundation insulation and water management of basements. Variations include closed cell spray foam (ccSPF) with membrane waterproofing or air gap membrane drainage layers, rigid board foam insulation at flat walls (cast concrete or CMU block), a “partial drainage” detail making use of the bulk water drainage that occurs through the field of a rubble stone wall, and non-drained spray foam assemblies (including slab insulation).

  4. Measure Guideline: Hybrid Foundation Insulation Retrofits

    Energy Technology Data Exchange (ETDEWEB)

    Ueno, K.; Lstiburek, J.

    2012-05-01

    This measure guideline provides recommendations for designs and variations for retrofit hybrid assemblies in improving interior foundation insulation and water management of basements. Variations include closed cell spray foam (ccSPF) with membrane waterproofing or air gap membrane drainage layers, rigid board foam insulation at flat walls (cast concrete or CMU block), a 'partial drainage' detail making use of the bulk water drainage that occurs through the field of a rubble stone wall, and non-drained spray foam assemblies (including slab insulation).

  5. External insulation with cellular plastic materials

    DEFF Research Database (Denmark)

    Sørensen, Lars Schiøtt; Nielsen, Anker

    2014-01-01

    External thermal insulation composite systems (ETICS) can be used as extra insulation of existing buildings. The system can be made of cellular plastic materials or mineral wool. There is a European Technical guideline, ETAG 004, that describe the tests that shall be conducted on such systems....... This paper gives a comparison of systems with mineral wool and cellular plastic, based on experience from practice and literature. It is important to look at the details in the system and at long time stability of the properties such as thermal insulation, moisture and fire. Investigation of fire properties...

  6. Electronic transport in bismuth selenide in the topological insulator regime

    Science.gov (United States)

    Kim, Dohun

    The 3D topological insulators (TIs) have an insulating bulk but spin-momentum coupled metallic surface states stemming from band inversion due to strong spin-orbit interaction, whose existence is guaranteed by the topology of the band structure of the insulator. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate clear signature of the STI due to high level of bulk conduction. In this thesis, I present experimental results on the transport properties of TI material Bi2Se3 in the absence of bulk conduction (TI regime), achieved by applying novel p-type doping methods. Field effect transistors consisting of thin (thickness: 5-17 nm) Bi2Se3 are fabricated by mechanical exfoliation of single crystals, and a combination of conventional dielectric (300 nm thick SiO2) and electrochemical or chemical gating methods are used to move the Fermi energy through the surface Dirac point inside bulk band gap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be 60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se 3, which will have implications for topological electronic devices operating at room temperature. Along with semi-classical Boltzmann transport, I also discuss 2D weak anti-localization (WAL) behavior of the topological surface states. By investigating gate-tuned WAL behavior in thin (5-17 nm) TI films, I show that WAL in the TI regime is extraordinarily sensitive to the hybridization induced quantum mechanical tunneling between top and bottom topological surfaces, and interplay of phase coherence

  7. Repeatability of Cryogenic Multilayer Insulation

    Science.gov (United States)

    Johnson, W. L.; Vanderlaan, M.; Wood, J. J.; Rhys, N. O.; Guo, W.; Van Sciver, S.; Chato, D. J.

    2017-12-01

    Due to the variety of requirements across aerospace platforms, and one off projects, the repeatability of cryogenic multilayer insulation (MLI) has never been fully established. The objective of this test program is to provide a more basic understanding of the thermal performance repeatability of MLI systems that are applicable to large scale tanks. There are several different types of repeatability that can be accounted for: these include repeatability between identical blankets, repeatability of installation of the same blanket, and repeatability of a test apparatus. The focus of the work in this report is on the first two types of repeatability. Statistically, repeatability can mean many different things. In simplest form, it refers to the range of performance that a population exhibits and the average of the population. However, as more and more identical components are made (i.e. the population of concern grows), the simple range morphs into a standard deviation from an average performance. Initial repeatability testing on MLI blankets has been completed at Florida State University. Repeatability of five Glenn Research Center (GRC) provided coupons with 25 layers was shown to be +/- 8.4% whereas repeatability of repeatedly installing a single coupon was shown to be +/- 8.0%. A second group of 10 coupons has been fabricated by Yetispace and tested by Florida State University, the repeatability between coupons has been shown to be +/- 15-25%. Based on detailed statistical analysis, the data has been shown to be statistically significant.

  8. Surface electrical resistivity of insulators

    International Nuclear Information System (INIS)

    Senn, B. C.; Liesegang, J.

    1996-01-01

    A method is presented here for measuring surface charge decay, and theory has been developed so as to produce determinations of resistivity in the surface region of insulator films or wafers. This method incorporates the use of a coaxial cylindrical capacitor arrangement and an electrometer interfaced to a PC. The charge transport theory given here is based on Mott-Gurney diffusion, and allows easy interpretation of the experimental data, especially for the initial phase of surface charge decay. Resistivity measurements are presented for glass, mica, perspex and polyethylene, covering a range of 10 9 to 10 18 Ωm, as an illustration of the useful range of the instrument for static and antistatic materials, particularly in film or sheet form. Values for the surface charge diffusion constants of the materials are also presented. The charge transport theory has also been extended to allow the experimental and computational theoretical comparison of surface charge decay not only over the initial phase of charge decay, but also over longer times. The theoretical predictions show excellent agreement with experiment using the values for the diffusion constants referred to above

  9. Irradiation effects on organic insulators

    International Nuclear Information System (INIS)

    Kasen, M.B.

    1986-01-01

    The overall objective of this work is to contribute to development of organic insulators having the cryogenic neutron irradiation resistance required for MFE systems utilizing superconducting magnet confinement. The system for producing standard 3.2-mm (0.125-in) diameter rod specimens discussed in previous reports has been further refined to permit the fabrication of both fiber-reinforced and heat-resin specimens from hot-melt resin systems. The method has been successfully used to produce very high quality specimens duplicating the G-11CR system and specimens from a variant of that system eliminating a boron-containing additive. We have also produced specimens from an epoxy system suitable for impregnation or potting operations and from a bismaleimide polyimide system. These materials will be used in the first irradiation program in the National Low Temperature Neutron Irradiation Facility (NLTNIF) reactor at Oak Ridge. We have refined the 4-K torsional shear test method for evaluating radiation degradation of the fiber-matrix interface and have developed a method of quantitatively measuring changes in fracture energy as a function of radiation dose. Cooperative work with laboratories in Japan and England in this area is continuing and plans are being formulated for joint production, irradiation, and testing of specimens

  10. Spintronics Based on Topological Insulators

    Science.gov (United States)

    Fan, Yabin; Wang, Kang L.

    2016-10-01

    Spintronics using topological insulators (TIs) as strong spin-orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin-orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin-torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.

  11. Topological insulators Dirac equation in condensed matter

    CERN Document Server

    Shen, Shun-Qing

    2017-01-01

    This new edition presents a unified description of these insulators from one to three dimensions based on the modified Dirac equation. It derives a series of solutions of the bound states near the boundary, and describes the current status of these solutions. Readers are introduced to topological invariants and their applications to a variety of systems from one-dimensional polyacetylene, to two-dimensional quantum spin Hall effect and p-wave superconductors, three-dimensional topological insulators and superconductors or superfluids, and topological Weyl semimetals, helping them to better understand this fascinating field. To reflect research advances in topological insulators, several parts of the book have been updated for the second edition, including: Spin-Triplet Superconductors, Superconductivity in Doped Topological Insulators, Detection of Majorana Fermions and so on. In particular, the book features a new chapter on Weyl semimetals, a topic that has attracted considerable attention and has already b...

  12. KSI's Cross Insulated Core Transformer Technology

    International Nuclear Information System (INIS)

    Uhmeyer, Uwe

    2009-01-01

    Cross Insulated Core Transformer (CCT) technology improves on Insulated Core Transformer (ICT) implementations. ICT systems are widely used in very high voltage, high power, power supply systems. In an ICT transformer ferrite core sections are insulated from their neighboring ferrite cores. Flux leakage is present at each of these insulated gaps. The flux loss is raised to the power of stages in the ICT design causing output voltage efficiency to taper off with increasing stages. KSI's CCT technology utilizes a patented technique to compensate the flux loss at each stage of an ICT system. Design equations to calculate the flux compensation capacitor value are presented. CCT provides corona free operation of the HV stack. KSI's CCT based High Voltage power supply systems offer high efficiency operation, high frequency switching, low stored energy and smaller size over comparable ICT systems.

  13. Cryogenic Insulation Standard Data and Methodologies

    Data.gov (United States)

    National Aeronautics and Space Administration — Extending some recent developments in the area of technical consensus standards for cryogenic thermal insulation systems, a preliminary Inter-Laboratory Study of...

  14. Electrical breakdown studies with Mycalex insulators

    International Nuclear Information System (INIS)

    Waldron, W.; Greenway, W.; Eylon, S.; Henestroza, E.; Yu, S.

    2003-01-01

    Insulating materials such as alumina and glass-bonded mica (Mycalex) are used in accelerator systems for high voltage feedthroughs, structural supports, and barriers between high voltage insulating oil and the vacuum beam pipe in induction accelerator cells. Electric fields in the triple points should be minimized to prevent voltage breakdown. Mechanical stress can compromise seals and result in oil contamination of the insulator surface. We have tested various insulator cleaning procedures including ultrasonic cleaning with a variety of aqueous-based detergents, and manual scrubbing with various detergents. Water sheeting tests were used to determine the initial results of the cleaning methods. Ultimately, voltage breakdown tests will be used to quantify the benefits of these cleaning procedures

  15. Characterization techniques for ion bombarded insulators

    International Nuclear Information System (INIS)

    Borders, J.A.

    1987-01-01

    The chapter gives a comprehensive review of the experimental methods for the analysis of ion-bombarded insulators including optical and structural methods, resonance, energetic ion methods, and surface techniques. 48 refs.; 34 figs

  16. Corrosion-under-insulation (CUI) guidelines

    CERN Document Server

    Staff, European Federation of Corrosion; Winnik, S

    2014-01-01

    Corrosion under insulation (CUI) refers to the external corrosion of piping and vessels that occurs underneath externally clad/jacketed insulation as a result of the penetration of water. By its very nature CUI tends to remain undetected until the insulation and cladding/jacketing is removed to allow inspection or when leaks occur. CUI is a common problem shared by the refining, petrochemical, power, industrial, onshore and offshore industries. The European Federation of Corrosion (EFC) Working Parties WP13 and WP15 have worked to provide guidelines on managing CUI together with a number of major European refining, petrochemical and offshore companies including BP, Chevron-Texaco, Conoco-Phillips, ENI, Exxon-Mobil, IFP, MOL, Scanraff, Statoil, Shell, Total and Borealis. The guidelines within this document are intended for use on all plants and installations that contain insulated vessels, piping and equipment. The guidelines cover a risk-based inspection methodology for CUI, inspection techniques (including n...

  17. (ajst) effects of ground insulation and greenhouse

    African Journals Online (AJOL)

    NORBERT OPIYO AKECH

    and quality of biogas generation from dairy cattle dung. The effects ... Therefore ground insulation of plastic biogas digester under greenhouse conditions significantly enhances ..... The low values obtained did not suggest failure of the system ...

  18. Improved thermal monitoring of rotating machine insulation

    International Nuclear Information System (INIS)

    Stone, G.C.; Sedding, H.G.; Bernstein, B.S.

    1991-01-01

    Aging of motor and generator insulation is most often induced as a result of operation at high temperatures. In spite of this knowledge, stator and rotor temperatures are only crudely monitored in existing machines. In EPRI project RP2577-1, three new means of detecting machine temperatures were successfully developed. Two of the techniques, the Electronic Rotor Temperature Sensor and the Passive Rotor Temperature Sensor, were specifically developed to give point temperature readings on turbine generator rotor windings. The Insulation Sniffer allows operators to determine when any electrical insulation in a motor is overheating. Another electronic device, called the Thermal Life Indicator, helps operators and maintenance personnel determine how accumulated operation has affected the remaining life of the insulation in rotating machines. These new devices permit nuclear station operators to avoid hazardous operating conditions and will help to determine priorities for maintenance and plant life extension programs

  19. Thermal insulation performance of green roof systems

    Energy Technology Data Exchange (ETDEWEB)

    Celik, Serdar; Morgan, Susan; Retzlaff, William; Once, Orcun [southern Illinois University (United States)], e-mail: scelik@siue.edu, e-mail: smorgan@siue.edu, e-mail: wretzla@siue.edu, e-mail: oonce@siue.edu

    2011-07-01

    With the increasing costs of energy, good building insulation has become increasingly important. Among existing insulation techniques is the green roof system, which consists of covering the roof of a building envelop with plants. The aim of this paper is to assess the impact of vegetation type and growth media on the thermal performance of green roof systems. Twelve different green roof samples were made with 4 different growth media and 3 sedum types. Temperature at the sample base was recorded every 15 minutes for 3 years; the insulation behavior was then analysed. Results showed that the insulation characteristics were achieved with a combination of haydite and sedum sexangulare. This study demonstrated that the choice of growth media and vegetation is important to the green roof system's performance; further research is required to better understand the interactions between growth media and plant roots.

  20. Aluminum nitride insulating films for MOSFET devices

    Science.gov (United States)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  1. Effect of Sweating on Insulation of Footwear.

    Science.gov (United States)

    Kuklane, Kalev; Holmér, Ingvar

    1998-01-01

    The study aimed to find out the influence of sweating on footwear insulation with a thermal foot model. Simultaneously, the influence of applied weight (35 kg), sock, and steel toe cap were studied. Water to 3 sweat glands was supplied with a pump at the rate of 10 g/hr in total. Four models of boots with steel toe caps were tested. The same models were manufactured also without steel toe. Sweating reduced footwear insulation 19-25% (30-37% in toes). During static conditions, only a minimal amount of sweat evaporated from boots. Weight affected sole insulation: Reduction depended on compressibility of sole material. The influence of steel toe varied with insulation. The method of thermal foot model appears to be a practical tool for footwear evaluation.

  2. Grandstand view of phenolic foam insulation

    Energy Technology Data Exchange (ETDEWEB)

    1987-03-01

    Stadium Insulation Ltd, manufacture pipe sections, tank and vessel insulation products in Lowphen, polyisocyanurate, polyurethane foams and expanded polystyrene, though for certain specialist applications, cork is still employed in small quantities. Currently the emphasis is very much on Lowphen, the company's range of pipe sections based on phenolic foam. The company's manufacturing and marketing effort reflects the increasing market trend towards the use of insulating material capable of withstanding higher temperatures, and phenolic foam neatly satisfies the demand since it is capable of use at temperatures up to 140/sup 0/C. Moreover, phenolic foam has the lowest K value at 0.02W/m/sup 0/C of any of the currently available range of insulating materials, and while the product is slightly more expensive than alternatives such as polyisocyanurate and polyurethane, its high performance offsets that premium.

  3. Two-phase behavior in strained thin films of hole-doped manganites

    OpenAIRE

    Biswas, Amlan; Rajeswari, M.; Srivastava, R. C.; Li, Y. H.; Venkatesan, T.; Greene, R. L.; Millis, A. J.

    1999-01-01

    We present a study of the effect of biaxial strain on the electrical and magnetic properties of thin films of manganites. We observe that manganite films grown under biaxial compressive strain exhibit island growth morphology which leads to a non-uniform distribution of the strain. Transport and magnetic properties of these films suggest the coexistence of two different phases, a metallic ferromagnet and an insulating antiferromagnet. We suggest that the high strain regions are insulating whi...

  4. Total dose hardening of buried insulator in implanted silicon-on-insulator structures

    International Nuclear Information System (INIS)

    Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

    1987-01-01

    Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

  5. Facility for endurance tests of thermal insulations

    International Nuclear Information System (INIS)

    Mauersberger, R.

    1984-01-01

    In the following report the design and construction of an experimental facility for endurance tests of thermal insulations is presented. It's name in abbreviation is 'ADI' standing for the German words A nlage zum Dauertest von Isolierungen . This test facility was build by HRB in order to investigate the performance of thermal insulation systems of hot gas ducts for the process heat-reactor-project. The tests are intended to simulate the conditions of reactor operation. They include short-time experiments for selection of insulation-concepts and in a second step long-time experiments as performance tests. During these tests are measured the effective heat conductivity the local heat losses the temperature profiles of the insulation, of the fixing elements and along the wall of the duct. The design-data required to perform all these tasks are shown in the first picture: The gas-atmosphere must be Helium in tests like in reactor with regard to the special thermal and hydraulic properties of Helium and to the influence of Helium on mechanic friction and wear. The hot gas temperature in the PNP-reactor will be 950 deg. C and should be equal in the experiments. The temperature on the cold side of the insulation has to be adjustable from 50 deg. C up to 300 deg. C. The Helium pressure in the hot gas ducts of a HTR-plant is about 42 bar. The ADI was laid out for 70 bar to cover the hole range of interest. A Helium mass flow has to stream through the insulated test duct in order to realize equal temperatures on the hot side of the insulation. A flow rate of 4,5 kg/s is sufficient for this requirement. The axial pressure gradient along the insulation must be the same as in the reactor, because this has an essential influence on the heat losses. This pressure gradient is about 40 Pa/m

  6. Status of surface conduction in topological insulators

    International Nuclear Information System (INIS)

    Barua, Sourabh; Rajeev, K. P.

    2014-01-01

    In this report, we scrutinize the thickness dependent resistivity data from the recent literature on electrical transport measurements in topological insulators. A linear increase in resistivity with increase in thickness is expected in the case of these materials since they have an insulating bulk and a conducting surface. However, such a trend is not seen in the resistivity versus thickness data for all the cases examined, except for some samples, where it holds for a range of thickness

  7. Measure Guideline. Internal Insulation of Masonry Walls

    Energy Technology Data Exchange (ETDEWEB)

    Straube, J. F. [Building Science Corporation (BSC), Somerville, MA (United States); Ueno, K. [Building Science Corporation (BSC), Somerville, MA (United States); Schumacher, C. J. [Building Science Corporation (BSC), Somerville, MA (United States)

    2012-07-01

    This measure guideline provides recommendations for interior insulation assemblies that control interstitial condensation and durability risks; recommendations for acceptable thermal performance are also provided. An illustrated guide of high-risk exterior details (which concentrate bulk water), and recommended remediation details is provided. This is followed by a recommended methodology for risk assessment of a masonry interior insulation project: a series of steps are suggested to assess the risks associated with this retrofit, with greater certainty with added steps.

  8. Measure Guideline: Internal Insulation of Masonry Walls

    Energy Technology Data Exchange (ETDEWEB)

    Straube, J. F.; Ueno, K.; Schumacher, C. J.

    2012-07-01

    This measure guideline provides recommendations for interior insulation assemblies that control interstitial condensation and durability risks; recommendations for acceptable thermal performance are also provided. An illustrated guide of high-risk exterior details (which concentrate bulk water), and recommended remediation details is provided. This is followed by a recommended methodology for risk assessment of a masonry interior insulation project: a series of steps are suggested to assess the risks associated with this retrofit, with greater certainty with added steps.

  9. High-voltage polymeric insulated cables

    Energy Technology Data Exchange (ETDEWEB)

    Ross, A

    1987-01-01

    Reviews developments in high-voltage (here defined as 25 kV, 66 kV and 132 kV) polymeric insulated cables in the UK over the period 1979-1986, with particular reference to the experience of the Eastern Electricity Board. Outlines the background to the adoption of XPLE-insulated solid cable, and the design, testing, terminations, jointing and costs of 25 kV, 66 kV and 132 kV cables.

  10. Proximity effects in topological insulator heterostructures

    International Nuclear Information System (INIS)

    Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

    2013-01-01

    Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

  11. Topological insulators and superconductors from string theory

    International Nuclear Information System (INIS)

    Ryu, Shinsei; Takayanagi, Tadashi

    2010-01-01

    Topological insulators and superconductors in different spatial dimensions and with different discrete symmetries have been fully classified recently, revealing a periodic structure for the pattern of possible types of topological insulators and superconductors, both in terms of spatial dimensions and in terms of symmetry classes. It was proposed that K theory is behind the periodicity. On the other hand, D-branes, a solitonic object in string theory, are also known to be classified by K theory. In this paper, by inspecting low-energy effective field theories realized by two parallel D-branes, we establish a one-to-one correspondence between the K-theory classification of topological insulators/superconductors and D-brane charges. In addition, the string theory realization of topological insulators and superconductors comes naturally with gauge interactions, and the Wess-Zumino term of the D-branes gives rise to a gauge field theory of topological nature, such as ones with the Chern-Simons term or the θ term in various dimensions. This sheds light on topological insulators and superconductors beyond noninteracting systems, and the underlying topological field theory description thereof. In particular, our string theory realization includes the honeycomb lattice Kitaev model in two spatial dimensions, and its higher-dimensional extensions. Increasing the number of D-branes naturally leads to a realization of topological insulators and superconductors in terms of holography (AdS/CFT).

  12. High-Performance Slab-on-Grade Foundation Insulation Retrofits

    Energy Technology Data Exchange (ETDEWEB)

    Goldberg, Louise F. [NorthernSTAR, St. Paul, MN (United States); Mosiman, Garrett E. [NorthernSTAR, St. Paul, MN (United States)

    2015-09-01

    A more accurate assessment of slab-on-grade foundation insulation energy savings than traditionally possible is now feasible. This has been enabled by advances in whole building energy simulation with 3-dimensional foundation modelling integration at each time step together with an experimental measurement of the site energy savings of SOG foundation insulation. Ten SOG insulation strategies were evaluated on a test building to identify an optimum retrofit insulation strategy in a zone 6 climate (Minneapolis, MN). The optimum insulation strategy in terms of energy savings and cost effectiveness consisted of two components: (a) R-20 XPS insulation above grade, and, (b) R-20 insulation at grade (comprising an outer layer of R-10 insulation and an interior layer of R-12 poured polyurethane insulation) tapering to R-10 XPS insulation at half the below-grade wall height (the lower half of the stem wall was uninsulated).

  13. Spin accumulation in disordered topological insulator ultrathin films

    Science.gov (United States)

    Siu, Zhuo Bin; Ho, Cong Son; Tan, Seng Ghee; Jalil, Mansoor B. A.

    2017-08-01

    Topological insulator (TI) ultrathin films differ from the more commonly studied semi-infinite bulk TIs in that the former possess both top and bottom surfaces where the surface states localized at different surfaces can couple to one another across the finite thickness of the film. In the presence of an in-plane magnetization, the TI thin films display two distinct phases depending on which of the inter-surface coupling or the magnetization is stronger. In this work, we consider a Bi2Se3 TI thin film system with an in-plane magnetization and numerically calculate the resulting spin accumulation on both surfaces of the film due to an in-plane electric field to linear order. We describe a numerical scheme for performing the Kubo formula calculation in which we include impurity scattering and vertex corrections. We find that the sums of the spin accumulation over the two surfaces in the in-plane direction perpendicular to the magnetization and in the out of plane direction are antisymmetric in Fermi energy around the charge neutrality point and are non-vanishing only when the symmetry between the top and bottom TI surfaces is broken. The impurity scattering, in general, diminishes the magnitude of the spin accumulation.

  14. Giant anisotropic magnetoresistance in a quantum anomalous Hall insulator

    Science.gov (United States)

    Kandala, Abhinav; Richardella, Anthony; Kempinger, Susan; Liu, Chao-Xing; Samarth, Nitin

    2015-01-01

    When a three-dimensional ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon, the quantum anomalous Hall effect, provides a conceptually new platform for studies of 1D transport, distinct from the traditionally studied quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D edge states evolve as the magnetization is changed from out-of-plane to in-plane? We examine this question by studying the field-tilt-driven crossover from predominantly edge-state transport to diffusive transport in Crx(Bi,Sb)2−xTe3 thin films. This crossover manifests itself in a giant, electrically tunable anisotropic magnetoresistance that we explain by employing a Landauer–Büttiker formalism. Our methodology provides a powerful means of quantifying dissipative effects in temperature and chemical potential regimes far from perfect quantization. PMID:26151318

  15. Linear accelerator with x-ray absorbing insulators

    International Nuclear Information System (INIS)

    Rose, P.H.

    1975-01-01

    Annular insulators for supporting successive annular electrodes in a linear accelerator have embedded x-ray absorbing shield structures extending around the accelerating path. The shield members are disposed to intercept x-ray radiation without disrupting the insulative effect of the insulator members. In preferred forms, the structure comprises a plurality of annular members of heavy metal disposed in an x-ray blocking array, spaced from each other by the insulating substance of the insulator member. (auth)

  16. Development of insulating coatings for liquid metal blankets

    International Nuclear Information System (INIS)

    Malang, S.; Borgstedt, H.U.; Farnum, E.H.; Natesan, K.; Vitkovski, I.V.

    1994-07-01

    It is shown that self-cooled liquid metal blankets are feasible only with electrically insulating coatings at the duct walls. The requirements on the insulation properties are estimated by simple analytical models. Candidate insulator materials are selected based on insulating properties and thermodynamic consideration. Different fabrication technologies for insulating coatings are described. The status of the knowledge on the most crucial feasibility issue, the degradation of the resisivity under irradiation, is reviewed

  17. An Insulating Glass Knowledge Base

    Energy Technology Data Exchange (ETDEWEB)

    Michael L. Doll; Gerald Hendrickson; Gerard Lagos; Russell Pylkki; Chris Christensen; Charlie Cureija

    2005-08-01

    This report will discuss issues relevant to Insulating Glass (IG) durability performance by presenting the observations and developed conclusions in a logical sequential format. This concluding effort discusses Phase II activities and focuses on beginning to quantifying IG durability issues while continuing the approach presented in the Phase I activities (Appendix 1) which discuss a qualitative assessment of durability issues. Phase II developed a focus around two specific IG design classes previously presented in Phase I of this project. The typical box spacer and thermoplastic spacer design including their Failure Modes and Effect Analysis (FMEA) and Fault Tree diagrams were chosen to address two currently used IG design options with varying components and failure modes. The system failures occur due to failures of components or their interfaces. Efforts to begin quantifying the durability issues focused on the development and delivery of an included computer based IG durability simulation program. The focus/effort to deliver the foundation for a comprehensive IG durability simulation tool is necessary to address advancements needed to meet current and future building envelope energy performance goals. This need is based upon the current lack of IG field failure data and the lengthy field observation time necessary for this data collection. Ultimately, the simulation program is intended to be used by designers throughout the current and future industry supply chain. Its use is intended to advance IG durability as expectations grow around energy conservation and with the growth of embedded technologies as required to meet energy needs. In addition the tool has the immediate benefit of providing insight for research and improvement prioritization. Included in the simulation model presentation are elements and/or methods to address IG materials, design, process, quality, induced stress (environmental and other factors), validation, etc. In addition, acquired data

  18. Biodegradation performance of environmentally-friendly insulating oil

    Science.gov (United States)

    Yang, Jun; He, Yan; Cai, Shengwei; Chen, Cheng; Wen, Gang; Wang, Feipeng; Fan, Fan; Wan, Chunxiang; Wu, Liya; Liu, Ruitong

    2018-02-01

    In this paper, biodegradation performance of rapeseed insulating oil (RDB) and FR3 insulating oil (FR3) was studied by means of ready biodegradation method which was performed with Organization for Economic Co-operation and Development (OECD) 301B. For comparison, the biodegradation behaviour of 25# mineral insulating oil was also characterized with the same method. The testing results shown that the biodegradation degree of rapeseed insulating oil, FR3 insulating oil and 25# mineral insulating oil was 95.8%, 98.9% and 38.4% respectively. Following the “new chemical risk assessment guidelines” (HJ/T 154 - 2004), which illustrates the methods used to identify and assess the process safety hazards inherent. The guidelines can draw that the two vegetable insulating oils, i.e. rapeseed insulating oil and FR3 insulating oil are easily biodegradable. Therefore, the both can be classified as environmentally-friendly insulating oil. As expected, 25# mineral insulating oil is hardly biodegradable. The main reason is that 25# mineral insulating oil consists of isoalkanes, cyclanes and a few arenes, which has few unsaturated bonds. Biodegradation of rapeseed insulating oil and FR3 insulating oil also remain some difference. Biodegradation mechanism of vegetable insulating oil was revealed from the perspective of hydrolysis kinetics.

  19. Design and fabrication of metal-insulator-metal diode for high frequency applications

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2017-02-01

    Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

  20. AC over-current characteristics of YBCO coated conductor with copper stabilizer layer considering insulation layer

    International Nuclear Information System (INIS)

    Du, H.-I.; Kim, M.-J.; Kim, Y.-J.; Lee, D.-H.; Han, B.-S.; Song, S.-S.

    2010-01-01

    Compared with the first-generation BSCCO wire, the YBCO thin-film wire boasts low material costs and high J c and superior magnetic-field properties, among other strengths. Meanwhile, the previous BSCCO wire material for superconducting cables has been researched on considerably with regard to its post-wire quenching characteristics during the application of an alternating over-current. In this regard, the promising YBCO thin-film wire has yet to be further researched on. Moreover, still lacking is research on the YBCO thin-film wire with insulating layers, which is essential in the manufacture of superconducting cables, along with the testing of the application of an alternating over-current to the wire. In this study, YBCO thin-film wires with copper-stabilizing layers were used in testing alternating over-current application according to the presence or absence of insulating layers and to the thickness of such layers, to examine the post-quenching wire resistance increase and quenching trends. The YBCO thin-film wire with copper-stabilizing layers has a critical temperature of 90 K and a critical current of 85 A rms . Moreover, its current application cycle is 5.5 cycles, and its applied currents are 354, 517, 712, and 915 A peak . These figures enabled the YBCO thin-film wires with copper-stabilizing layers to reach 90, 180, 250, and 300 K, respectively, in this study. These temperatures serve as a relative reference to examine the post-quenching wire properties following the application of an alternating over-current.

  1. Novel load responsive multilayer insulation with high in-atmosphere and on-orbit thermal performance

    Science.gov (United States)

    Dye, S.; Kopelove, A.; Mills, G. L.

    2012-04-01

    Aerospace cryogenic systems require lightweight, high performance thermal insulation to preserve cryopropellants both pre-launch and on-orbit. Current technologies have difficulty meeting all requirements, and advances in insulation would benefit cryogenic upper stage launch vehicles, LH2 fueled aircraft and ground vehicles, and provide capabilities for sub-cooled cryogens for space-borne instruments and orbital fuel depots. This paper reports the further development of load responsive multilayer insulation (LRMLI) that has a lightweight integrated vacuum shell and provides high thermal performance both in-air and on-orbit. LRMLI is being developed by Quest Product Development and Ball Aerospace under NASA contract, with prototypes designed, built, installed and successfully tested. A 3-layer LRMLI blanket (0.63 cm thick, 77 K cold, 295 K hot) had a measured heat leak of 6.6 W/m2 in vacuum and 40.6 W/m2 in air at one atmosphere. In-air LRMLI has an 18× advantage over Spray On Foam Insulation (SOFI) in heat leak per thickness and a 16× advantage over aerogel. On-orbit LRMLI has a 78× lower heat leak than SOFI per thickness and 6× lower heat leak than aerogel. The Phase II development of LRMLI is reported with a modular, flexible, thin vacuum shell and improved on-orbit performance. Structural and thermal analysis and testing results are presented. LRMLI mass and thermal performance is compared to SOFI, aerogel and MLI over SOFI.

  2. Electrical resistivity of ferrimagnetic magnetite thin film

    International Nuclear Information System (INIS)

    Varshney, Dinesh; Yogi, A.; Kaurav, N.; Gupta, R.P.; Phase, D.M.

    2006-01-01

    We have grown Fe 3 O 4 (III) epitaxial film on Al 2 O 3 (0001) substrate by pulsed laser deposition, with thickness of 130 nm. X-ray diffraction studies of magnetite show the spinel cubic structure of film with preferential (III) orientation. The electrical resistivity measurement demonstrates that the properties of thin film of magnetite are basically similar to those of bulk magnetite and clearly shows semiconductor-insulator transition at Verwey transition temperature (≅140 K). We have found higher Verwey transition temperature when compared with earlier reports on similar type of system. Possible causes for increase in transition temperature are discussed. (author)

  3. Thermal conductivity model for nanoporous thin films

    Science.gov (United States)

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  4. Energy conservation through thermally insulated structures

    International Nuclear Information System (INIS)

    Abu-Dayyeh, Ayoub

    2006-01-01

    The propose of this paper is to explicate its title through investigating the different available thermal insulating materials and the various techniques of application, as practiced in Jordan, in particular, and as practiced in many parts of the world in general, which will satisfy Jordanian standards in terms of heat transmittance and thermal comfort. A brief comparison with international standards will shed some light on the stringent measures enforced in the developed world and on our striving aspirations to keep pace. The paper consists of four main parts, pseudoally divided. The first part will deal with the mechanism of heat loss and heat gain in structures during summer and winter. It will also explain the Time-lag phenomenon which is vital for providing thermal comfort inside the dwellings. The second part will evaluate the damages induced by the temperature gradients on the different elements of the structure, particularly next to exterior opening. The paper will also demonstrate the damages induced by water condensation and fungus growth on the internal surfaces of the structure and within its skeleton. A correlation between condensation and thermal insulation will be established. The third part of the paper will evaluate the different available thermal insulating materials and the application techniques which will satisfy the needs for thermal insulating and thermal comfort at the least cost possible. The criteria of an economical design shall be established. As a conclusion, the paper infers answers to the following different criteria discussed throughout the different parts of the paper. The main theme of questions can be summarized as follows: 1)How energy conservation is possible due to thermal insulation? 2)The feasibility of investing in thermal insulation? 3)Is thermal comfort and a healthy atmosphere possible inside the dwellings during all season! What are the conditions necessary to sustain them? 4)What environmental impacts can exist due to

  5. Insulation systems of the building construtions

    Directory of Open Access Journals (Sweden)

    Rumiantcev Boris

    2016-01-01

    Full Text Available Constructions of the exterior insulation and decoration combines materials of different functionality and constructive solutions allows to these materials to demonstrate their efficiency to the great extent. Fire safety of buildings is mandatory requirement for building systems. Some insulating material may belong to the group of combustible, but their use in structures so as to minimize the risk of fire. On the other hand, there are special designs, in which non-flammable insulation acts as a flame retardant barrier. In the article carried systematization of construction systems used in the flat and pitched roof during the insulation and wall covering and facades. Taking into account the experience of leading firms were considered the application features of using exterior finish systems: construction solutions, requirements for materials and recommendations about the installation these systems.The article deals with the construction ventilated roofing system of two types: flat roof and pitched roof seam. In the first case, the ventilation system is created using milled insulation boards in the second - by a ventilated gap. In both cases the natural convection of air in the air cavities. Ensuring operational stability insulation is laid on the stages of production of heat-insulating materials. It is important: firstly responsible execution of all process operations associated with providing regulatory properties of materials and secondly, the performance of additional operations associated with the produc-tion of materials, working in a specific design. An example of a material whose properties can modify for a particular application, are milled mineral wool (with air channels for systems of ventilated flat roof.

  6. Improvements to the electrical insulation resistance of high quality magnesia insulated cables

    International Nuclear Information System (INIS)

    Mauger, R.A.; Goodings, A.

    1984-03-01

    Mineral insulated signal cables for nuclear reactor instrumentation schemes have to meet stringent electrical insulation requirements at high temperatures. This report discusses the factors which influence the attainment of this objective and the way in which it has been reached under industrial manufacturing conditions. It emphasises the importance of moisture and gives details of the improvements achieved as a result of moisture reduction. (author)

  7. INSUL, Calculation of Thermal Insulation of Various Materials Immersed in He

    International Nuclear Information System (INIS)

    Kinkead, A.N.; Pitchford, B.E.

    1977-01-01

    1 - Nature of the physical problem solved: Performance of thermal insulation immersed in helium. 2 - Method of solution: Mineral fibre, metal fibre and metallic multi-layer foils are studied. An approximate analysis for performance evaluation of multi-layer insulation in vertical gas spaces including the regime between fully suppressed natural convection and that for which an accepted power relationship applies is included

  8. Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

    International Nuclear Information System (INIS)

    Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

    2015-01-01

    We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

  9. Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

    International Nuclear Information System (INIS)

    Watanabe, S.

    1984-01-01

    The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

  10. Insulators form gene loops by interacting with promoters in Drosophila.

    Science.gov (United States)

    Erokhin, Maksim; Davydova, Anna; Kyrchanova, Olga; Parshikov, Alexander; Georgiev, Pavel; Chetverina, Darya

    2011-09-01

    Chromatin insulators are regulatory elements involved in the modulation of enhancer-promoter communication. The 1A2 and Wari insulators are located immediately downstream of the Drosophila yellow and white genes, respectively. Using an assay based on the yeast GAL4 activator, we have found that both insulators are able to interact with their target promoters in transgenic lines, forming gene loops. The existence of an insulator-promoter loop is confirmed by the fact that insulator proteins could be detected on the promoter only in the presence of an insulator in the transgene. The upstream promoter regions, which are required for long-distance stimulation by enhancers, are not essential for promoter-insulator interactions. Both insulators support basal activity of the yellow and white promoters in eyes. Thus, the ability of insulators to interact with promoters might play an important role in the regulation of basal gene transcription.

  11. Resistivity behavior of optimized PbTiO3 thin films prepared by spin coating method

    Science.gov (United States)

    Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

    2018-05-01

    Th is study presents the resistivity behavior of PbTiO3 thin films which were prepared towards metal-insulator-metal capacitor device fabrication. The PbTiO3 thin films were prepared through sol-gel spin coating method that involved various deposition parameters that is (1) different molar concentration of PbTiO3 solutions, (2) various additional PbAc-content in PbTiO3 solutions, and (3) various annealing temperature on PbTiO3 thin films. Hence, an electrical measurement of current versus voltage was done to determine the resistivity behavior of PbTiO3 thin films.

  12. Artificial heart system thermal insulation component development

    International Nuclear Information System (INIS)

    Svedberg, R.C.; Buckman, R.W. Jr.

    1975-01-01

    A concentric cup vacuum multifoil insulation system has been selected by virtue of its size, weight, and thermal performance to insulate the hot radioisotope portion of the thermal converter of an artificial implantable heart system. A factor of 2 improvement in thermal performance, based on the heat loss per number of foil layers (minimum system weight and volume) has been realized over conventional spiral wrapped multifoil vacuum insulation. This improvement is the result of the concentric cup construction to maintain a uniform interfoil spacing and the elimination of corner heat losses. Based on external insulation system dimensions (surface area in contact with host body), heat losses of 0.019 W/ cm 2 at 1140 0 K (1600 0 F) and 0.006 W/cm 2 at 920 0 K (1200 0 F) have been achieved. Factors which influence thermal performance of the nickel foil concentric cup insulation system include the number of cups, configuration and method of application of zirconia (ZrO 2 ) spacer material, system pressure, emittance of the cups, and operating temperature

  13. Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

    Energy Technology Data Exchange (ETDEWEB)

    Muthusubramanian, N.; Zant, H. S. J. van der [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (Netherlands); Galan, E.; Maity, C.; Eelkema, R.; Grozema, F. C. [Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft (Netherlands)

    2016-07-04

    We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al{sub 2}O{sub 3} thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10{sup −4} G{sub 0} (1 G{sub 0} = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were used to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.

  14. A lightweight low-frequency sound insulation membrane-type acoustic metamaterial

    Science.gov (United States)

    Lu, Kuan; Wu, Jiu Hui; Guan, Dong; Gao, Nansha; Jing, Li

    2016-02-01

    A novel membrane-type acoustic metamaterial with a high sound transmission loss (STL) at low frequencies (⩽500Hz) was designed and the mechanisms were investigated by using negative mass density theory. This metamaterial's structure is like a sandwich with a thin (thickness=0.25mm) lightweight flexible rubber material within two layers of honeycomb cell plates. Negative mass density was demonstrated at frequencies below the first natural frequency, which results in the excellent low-frequency sound insulation. The effects of different structural parameters of the membrane on the sound-proofed performance at low frequencies were investigated by using finite element method (FEM). The numerical results show that, the STL can be modulated to higher value by changing the structural parameters, such as the membrane surface density, the unite cell film shape, and the membrane tension. The acoustic metamaterial proposed in this study could provide a potential application in the low-frequency noise insulation.

  15. Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure

    Science.gov (United States)

    Kostrov, Alexander I.; Stempitsky, Viktor R.; Kazimirchik, Vladimir N.

    2008-07-01

    In this work, we present a physical model and electrical macromodel for simulation of Magnetic Tunnel Junction (MTJ) effect based on Ferromagnetic/Insulator/Semiconductor (FIS) nanostructure. A modified Brinkman model has been proposed by including the voltage-dependent density of states of the ferromagnetic electrodes in order to explain the bias dependence magnitoresistance. The model takes into account injection of carriers in the semiconductor and Shottky barrier, electron tunneling through thin insulator and spin-transfer torque writing approach in memory cell. These very promising features should constitute the third generation of Magnetoresistive RAM (MRAM). Besides, the model can efficiently be used to design magnetic CMOS circuits. The behavioral macro-model has been developed by means of Verilog-AMS language and implemented on the Cadence Virtuoso platform with Spectre simulator.

  16. Study on Automatic Solar Heat Insulated and Cooling Device of Car

    Directory of Open Access Journals (Sweden)

    Chen Gui-Yue

    2017-01-01

    Full Text Available In view of the common device for heat insulated and cooling of car, an improved new scheme which drove by solar energy is put forward. In this study, the transmission device are arranged inside the automobile, the thin-film solar is composited into the heat insulated and cooling material. Thus, the whole device can be driven by the energy from the photovoltaic conversion, which is clear and zero-pollution. The theoretical energy consumptions and preventable gas emissions are calculated to verify the environmental savings of the device. The results show that it has promising application prospect since it is not only environmentally friendly but also save and convenient as compared to the conventional device.

  17. Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

    Science.gov (United States)

    Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F. C.; van der Zant, H. S. J.

    2016-07-01

    We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10-4 G0 (1 G0 = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were used to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.

  18. Graphene on insulating crystalline substrates

    International Nuclear Information System (INIS)

    Akcoeltekin, S; El Kharrazi, M; Koehler, B; Lorke, A; Schleberger, M

    2009-01-01

    We show that it is possible to prepare and identify ultra-thin sheets of graphene on crystalline substrates such as SrTiO 3 , TiO 2 , Al 2 O 3 and CaF 2 by standard techniques (mechanical exfoliation, optical and atomic force microscopy). On the substrates under consideration we find a similar distribution of single layer, bilayer and few-layer graphene and graphite flakes as with conventional SiO 2 substrates. The optical contrast C of a single graphene layer on any of those substrates is determined by calculating the optical properties of a two-dimensional metallic sheet on the surface of a dielectric, which yields values between C = -1.5% (G/TiO 2 ) and C = -8.8% (G/CaF 2 ). This contrast is in reasonable agreement with experimental data and is sufficient to make identification by an optical microscope possible. The graphene layers cover the crystalline substrate in a carpet-like mode and the height of single layer graphene on any of the crystalline substrates as determined by atomic force microscopy is d SLG = 0.34 nm and thus much smaller than on SiO 2 .

  19. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  20. Absorbed Dose Distributions in Small Copper Wire Insulation due to Multiple-Sided Irradiations by 0.4 MeV Electrons

    DEFF Research Database (Denmark)

    Miller, Arne; McLaughlin, W. L.; Pedersen, Walther Batsberg

    1979-01-01

    When scanned electron beams are used to crosslink polymeric insulation of wire and cable, an important goal is to achieve optimum uniformity of absorbed dose distributions. Accurate measurements of dose distributions in a plastic dosimeter simulating a typical insulating material (polyethylene......) surrounding a copper wire core show that equal irradiations from as few as four sides give approximately isotropy and satisfactorily uniform energy depositions around the wire circumference. Electron beams of 0.4 MeV maximum energy were used to irradiate wires having a copper core of 1.0 mm dia....... and insulation thicknesses between 0.4 and 0.8 mm. The plastic dosimeter simulating polyethylene insulations was a thin radiochromic polyvinyl butyral film wrapped several times around the copper wire, such that when unwrapped and analyzed optically on a scanning microspectrophotometer, high-resolution radial...

  1. PD-pulse characteristics in rotating machine insulation

    DEFF Research Database (Denmark)

    Holbøll, Joachim; Henriksen, Mogens; Jensen, A

    1994-01-01

    In this paper results are presented from investigations on partial discharges (PD) in insulation systems, resembling the stator insulation in high voltage rotating machines. A model, simulating a stator winding in a slot, has been developed, consisting of simple rotating machine insulation test...... bars with epoxy/mica insulation, mounted between steel sheets forming a dot, in order to investigate the fundamental behaviour of PD in insulation defects in epoxy/mica insulation and the characteristics of the resulting electrical pulses. Stator slot couplers (SSC) were used to detect pulses coming...

  2. Electrical insulator assembly with oxygen permeation barrier

    Science.gov (United States)

    Van Der Beck, Roland R.; Bond, James A.

    1994-01-01

    A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

  3. Optimisation of Multilayer Insulation an Engineering Approach

    CERN Document Server

    Chorowski, M; Parente, C; Riddone, G

    2001-01-01

    A mathematical model has been developed to describe the heat flux through multilayer insulation (MLI). The total heat flux between the layers is the result of three distinct heat transfer modes: radiation, residual gas conduction and solid spacer conduction. The model describes the MLI behaviour considering a layer-to-layer approach and is based on an electrical analogy, in which the three heat transfer modes are treated as parallel thermal impedances. The values of each of the transfer mode vary from layer to layer, although the total heat flux remains constant across the whole MLI blanket. The model enables the optimisation of the insulation with regard to different MLI parameters, such as residual gas pressure, number of layers and boundary temperatures. The model has been tested with experimental measurements carried out at CERN and the results revealed to be in a good agreement, especially for insulation vacuum between 10-5 Pa and 10-3 Pa.

  4. Acoustic excitation of containment insulation cover plate

    International Nuclear Information System (INIS)

    Fenech, H.; Rao, A.K.

    1978-01-01

    An experimental and theoretical program has been implemented by NRC-BNL since 1975 at the University of California, Santa Barbara to assess the reliability of the PCRV thermal insulation cover plate and the possible safety problem caused by the failure of this plate. A typical large HTGR PCRV unit [1160 MW(e)] and thermal insulation class A were selected. The upper core cavity is estimated to be the most critical volume where the noise pressure levels are expected to reach 110 to 130 dB (rel. to 2 x 10 -4 dynes/cm 2 ). The noise spectrum in that cavity is a composite of circulator noise, vortex shedding boundary layer turbulence, and flow impingement. Some anticipated safety related problems associated with the thermal insulation failure are examined

  5. Acoustic quality and sound insulation between dwellings

    DEFF Research Database (Denmark)

    Rindel, Jens Holger

    1998-01-01

    to another, however, several of the results show a slope around 4 % per dB. The results may be used to evaluate the acoustic quality level of a certain set of sound insulation requirements, or they may be used as a basis for specifying the desired acoustic quality of future buildings......During the years there have been several large field investigations in different countries with the aim to find a relationship between sound insulation between dwellings and the subjective degree of annoyance. This paper presents an overview of the results, and the difficulties in comparing...... the different findings are discussed. It is tried to establish dose-response relationships between airborne sound insulation or impact sound pressure level according to ISO 717 and the percentage of people being annoyed by noise from neighbours. The slopes of the dose-response curves vary from one investigation...

  6. Acoustic quality and sound insulation between dwellings

    DEFF Research Database (Denmark)

    Rindel, Jens Holger

    1999-01-01

    to another, however, several of the results show a slope around 4 % per dB. The results may be used to evaluate the acoustic quality level of a certain set of sound insulation requirements, or they may be used as a basis for specifying the desired acoustic quality of future buildings.......During the years there have been several large field investigations in different countries with the aim to find a relationship between sound insulation between dwellings and the subjective degree of annoyance. This paper presents an overview of the results, and the dif-ficulties in comparing...... the different findings are discussed. It is tried to establish dose-response relationships between airborne sound insulation or impact sound pressure level according to ISO 717 and the percentage of people being annoyed by noise from neighbours. The slopes of the dose-response curves vary from one investigation...

  7. Nuclear reactor vessel fuel thermal insulating barrier

    Science.gov (United States)

    Keegan, C. Patrick; Scobel, James H.; Wright, Richard F.

    2013-03-19

    The reactor vessel of a nuclear reactor installation which is suspended from the cold leg nozzles in a reactor cavity is provided with a lower thermal insulating barrier spaced from the reactor vessel that has a hemispherical lower section that increases in volume from the center line of the reactor to the outer extent of the diameter of the thermal insulating barrier and smoothly transitions up the side walls of the vessel. The space between the thermal insulating harrier and the reactor vessel forms a chamber which can be flooded with cooling water through passive valving to directly cool the reactor vessel in the event of a severe accident. The passive inlet valve for the cooling water includes a buoyant door that is normally maintained sealed under its own weight and floats open when the cavity is Hooded. Passively opening steam vents are also provided.

  8. Insulating Foams Save Money, Increase Safety

    Science.gov (United States)

    2009-01-01

    Scientists at Langley Research Center created polyimide foam insulation for reusable cryogenic propellant tanks on the space shuttle. Meanwhile, a small Hialeah, Florida-based business, PolyuMAC Inc., was looking for advanced foams to use in the customized manufacturing of acoustical and thermal insulation. The company contacted NASA, licensed the material, and then the original inventors worked with the company's engineers to make a new material that was better for both parties. The new version, a high performance, flame retardant, flexible polyimide foam, is used for insulating NASA cryogenic propellant tanks and shows promise for use on watercraft, aircraft, spacecraft, electronics and electrical products, automobiles and automotive products, recreation equipment, and building and construction materials.

  9. Tunneling probe of fluctuating superconductivity in disordered thin films

    Science.gov (United States)

    Dentelski, David; Frydman, Aviad; Shimshoni, Efrat; Dalla Torre, Emanuele G.

    2018-03-01

    Disordered thin films close to the superconductor-insulator phase transition (SIT) hold the key to understanding quantum phase transition in strongly correlated materials. The SIT is governed by superconducting quantum fluctuations, which can be revealed, for example, by tunneling measurements. These experiments detect a spectral gap, accompanied by suppressed coherence peaks, on both sides of the transition. Here we describe the insulating side in terms of a fluctuating superconducting field with finite-range correlations. We perform a controlled diagrammatic resummation and derive analytic expressions for the tunneling differential conductance. We find that short-range superconducting fluctuations suppress the coherence peaks even in the presence of long-range correlations. Our approach offers a quantitative description of existing measurements on disordered thin films and accounts for tunneling spectra with suppressed coherence peaks.

  10. Use of Insulated Covers over Product Crates to Reduce Losses in Amaranth during Shipping Delays

    Directory of Open Access Journals (Sweden)

    Lizanne Wheeler

    2015-12-01

    Full Text Available Amaranth is a leafy vegetable with high nutrient content which is sensitive to temperature and low relative humidity. Delays in shipment to market may result in significant losses, therefore improved packaging to minimize mechanical damage and reduce moisture loss are desirable. Amaranth was stored in three types of consumer packages, bunches, clamshells and thin plastic bags, within vented plastic crates. Pallet loads were either covered with insulated material or not, while awaiting transportation. Results indicated covering pallets improved the color and overall quality while reducing weight loss and wilting. Covered crates had a “good” (7.6/9.0 overall quality while uncovered averaged 5.5/9.0 or “moderate” quality. There were significant differences in consumer package type, with the bagged amaranth having almost “excellent” quality (8.8/9.0 compared to “good-fair” quality in clamshells (6.2/9.0 and “poor-fair” quality in the control bunches (4.7/9.0. Amaranth stored in thin plastic bags was better in quality and color, with less weight loss and wilting, however, temperatures at the end of six hours of storage were higher and this may lead to microbial growth. Storage of amaranth in thin bags or clamshell packages, within plastic crates covered with insulated pallet covers while awaiting shipping resulted in improved overall quality and color.

  11. Voltage-Controlled Spray Deposition of Multiwalled Carbon Nanotubes on Semiconducting and Insulating Substrates

    Science.gov (United States)

    Maulik, Subhodip; Sarkar, Anirban; Basu, Srismrita; Daniels-Race, Theda

    2018-05-01

    A facile, cost-effective, voltage-controlled, "single-step" method for spray deposition of surfactant-assisted dispersed carbon nanotube (CNT) thin films on semiconducting and insulating substrates has been developed. The fabrication strategy enables direct deposition and adhesion of CNT films on target samples, eliminating the need for substrate surface functionalization with organosilane binder agents or metal layer coatings. Spray coating experiments on four types of sample [bare silicon (Si), microscopy-grade glass samples, silicon dioxide (SiO2), and polymethyl methacrylate (PMMA)] under optimized control parameters produced films with thickness ranging from 40 nm to 6 μm with substantial surface coverage and packing density. These unique deposition results on both semiconducting and insulator target samples suggest potential applications of this technique in CNT thin-film transistors with different gate dielectrics, bendable electronics, and novel CNT-based sensing devices, and bodes well for further investigation into thin-film coatings of various inorganic, organic, and hybrid nanomaterials on different types of substrate.

  12. HgTe based topological insulators

    International Nuclear Information System (INIS)

    Bruene, Christoph

    2014-01-01

    This PhD thesis summarizes the discovery of topological insulators and highlights the developments on their experimental observations. The work focuses on HgTe. The thesis is structured as follows: - The first chapter of this thesis will give a brief overview on discoveries in the field of topological insulators. It focuses on works relevant to experimental results presented in the following chapters. This includes a short outline of the early predictions and a summary of important results concerning 2-dimensional topological insulators while the final section discusses observations concerning 3-dimensional topological insulators. - The discovery of the quantum spin Hall effect in HgTe marked the first experimental observation of a topological insulator. Chapter 2 focuses on HgTe quantum wells and the quantum spin Hall effect. The growth of high quality HgTe quantum wells was one of the major goals for this work. In a final set of experiments the spin polarization of the edge channels was investigated. Here, we could make use of the advantage that HgTe quantum well structures exhibit a large Rashba spin orbit splitting. - HgTe as a 3-dimensional topological insulator is presented in chapter 3. - Chapters 4-6 serve as in depth overviews of selected works: Chapter 4 presents a detailed overview on the all electrical detection of the spin Hall effect in HgTe quantum wells. The detection of the spin polarization of the quantum spin Hall effect is shown in chapter 5 and chapter 6 gives a detailed overview on the quantum Hall effect originating from the topological surface state in strained bulk HgTe.

  13. Detection of UV Pulse from Insulators and Application in Estimating the Conditions of Insulators

    Science.gov (United States)

    Wang, Jingang; Chong, Junlong; Yang, Jie

    2014-10-01

    Solar radiation in the band of 240-280 nm is absorbed by the ozone layer in the atmosphere, and corona discharges from high-voltage apparatus emit in air mainly in the 230-405 nm range of ultraviolet (UV), so the band of 240-280 nm is called UV Solar Blind Band. When the insulators in a string deteriorate or are contaminated, the voltage distribution along the string will change, which causes the electric fields in the vicinity of insulators change and corona discharge intensifies. An UV pulse detection method to check the conditions of insulators is presented based on detecting the UV pulse among the corona discharge, then it can be confirmed that whether there exist faulty insulators and whether the surface contamination of insulators is severe for the safe operation of power systems. An UV-I Insulator Detector has been developed, and both laboratory tests and field tests have been carried out which demonstrates the practical viability of UV-I Insulator Detector for online monitoring.

  14. High-fluence implantation in insulators. 1

    International Nuclear Information System (INIS)

    Mazzoldi, P.

    1989-01-01

    The defects which can be formed by ion implantation depend upon the insulator structure and composition. Thus, for glasses and ceramics, different changes are expected in mechanical and tribological properties, network dilatation, induced optical absorption and luminescence, compositional changes and modifications in the chemical behaviour. The modifications induced by ion implantation in the composition of glasses, with particular reference to alkali silicate glasses, the mechanical and tribological properties of ion implanted insulators, in particular glasses and ceramics, and the optical properties are discussed. 56 refs.; 20 figs

  15. Soup Cooking by Thermal Insulation Method

    OpenAIRE

    佐藤, 辰江; 根本, 勢子; サトウ, タツエ; ネモト, セイコ; TATSUE, SATO; SEIKO, NEMOTO

    1992-01-01

    In order to examine the thermal insulation method of soup cooking, we cooked two kinds of soup. The soup cooked by thermal insulation method was compared with the soup cooked by standard boiling method. ln sensory test, it was more aromatic and palatable than the soup by boiling, and some panels commented that it was rather mild. The measured values of pH, specific gravity, acidity and amount of dry weight of souble solids, total-N, formal-N of the soup cooked by the two methods mentioned abo...

  16. Radiant Heat Transfer in Reusable Surface Insulation

    Science.gov (United States)

    Hughes, T. A.; Linford, R. M. F.; Chmitt, R. J.; Christensen, H. E.

    1973-01-01

    During radiant testing of mullite panels, temperatures in the insulation and support structure exceeded those predicted on the basis of guarded hot plate thermal conductivity tests. Similar results were obtained during arc tunnel tests of mullite specimens. The differences between effective conductivity and guarded hot plate values suggested that radiant transfer through the mullite was occurring. To study the radiant transport, measurements were made of the infrared transmission through various insulating materials and fibers of interest to the shuttle program, using black body sources over the range of 780 to 2000 K. Experimental data were analyzed and scattering coefficients were derived for a variety of materials, fiber diameters, and source temperature.

  17. Three-dimensional topological insulators and bosonization

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, Andrea [INFN, Sezione di Firenze,Via G. Sansone 1, 50019 Sesto Fiorentino - Firenze (Italy); Randellini, Enrico [INFN, Sezione di Firenze,Via G. Sansone 1, 50019 Sesto Fiorentino - Firenze (Italy); Dipartimento di Fisica e Astronomia, Università di Firenze,Via G. Sansone 1, 50019 Sesto Fiorentino - Firenze (Italy); Sisti, Jacopo [Scuola Internazionale Superiore di Studi Avanzati (SISSA),Via Bonomea 265, 34136 Trieste (Italy)

    2017-05-25

    Massless excitations at the surface of three-dimensional time-reversal invariant topological insulators possess both fermionic and bosonic descriptions, originating from band theory and hydrodynamic BF theory, respectively. We analyze the corresponding field theories of the Dirac fermion and compactified boson and compute their partition functions on the three-dimensional torus geometry. We then find some non-dynamic exact properties of bosonization in (2+1) dimensions, regarding fermion parity and spin sectors. Using these results, we extend the Fu-Kane-Mele stability argument to fractional topological insulators in three dimensions.

  18. Measurement errors for thermocouples attached to thin plates

    International Nuclear Information System (INIS)

    Sobolik, K.B.; Keltner, N.R.; Beck, J.V.

    1989-01-01

    This paper discusses Unsteady Surface Element (USE) methods which are applied to a model of a thermocouple wire attached to a thin disk. Green's functions are used to develop the integral equations for the wire and the disk. The model can be used to evaluate transient and steady state responses for many types of heat flux measurement devices including thin skin calorimeters and circular foil (Gardon) head flux gauges. The model can accommodate either surface or volumetric heating of the disk. The boundary condition at the outer radius of the disk can be either insulated or constant temperature. Effect on the errors of geometrical and thermal factors can be assessed. Examples are given

  19. Thin NbN film structures on SOI for SNSPD

    Energy Technology Data Exchange (ETDEWEB)

    Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

    2012-07-01

    Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

  20. A pile-up phenomenon during arsenic diffusion in silicon-on-insulator structures formed by oxygen implantation

    Science.gov (United States)

    Normand, P.; Tsoukalas, D.; Guillemot, N.; Chenevier, P.

    1989-10-01

    Arsenic diffusion in silicon-on-insulator formed by deep oxygen implantation is studied by secondary ion mass spectroscopy and speading resistance measurements. An enhanced diffusivity as well as a pile-up phenomenon are observed in the thin silicon layer. The McNabb and Foster equations [Trans. TMS-AIME 22, 618 (1963)] for diffusion with trapping are solved in order to simulate this last effect.

  1. Effect of Sr doping on LaTiO3 thin films

    International Nuclear Information System (INIS)

    Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

    2005-01-01

    We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

  2. High Performance Slab-on-Grade Foundation Insulation Retrofits

    Energy Technology Data Exchange (ETDEWEB)

    Goldberg, Louise F. [NorthernSTAR, St. Paul, MN (United States); Mosiman, Garrett E. [NorthernSTAR, St. Paul, MN (United States)

    2015-09-01

    ?A more accurate assessment of SOG foundation insulation energy savings than traditionally possible is now feasible. This has been enabled by advances in whole building energy simulation with 3-dimensional foundation modelling integration at each time step together with an experimental measurement of the site energy savings of SOG foundation insulation. Ten SOG insulation strategies were evaluated on a test building to identify an optimum retrofit insulation strategy in a zone 6 climate (Minneapolis, MN). The optimum insulation strategy in terms of energy savings and cost effectiveness consisted of two components: (a) R-20 XPS insulation above grade, and, (b) R-20 insulation at grade (comprising an outer layer of R-10 insulation and an interior layer of R-12 poured polyurethane insulation) tapering to R-10 XPS insulation at half the below-grade wall height (the lower half of the stem wall was uninsulated). The optimum insulation strategy was applied to single and multi-family residential buildings in climate zone 4 - 7. The highest site energy savings of 5% was realized for a single family home in Duluth, MN, and the lowest savings of 1.4 % for a 4-unit townhouse in Richmond, VA. SOG foundation insulation retrofit simple paybacks ranged from 18 to 47 years. There are other benefits of SOG foundation insulation resulting from the increase in the slab surface temperatures. These include increased occupant thermal comfort, and a decrease in slab surface condensation particularly around the slab perimeter.

  3. Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

    Science.gov (United States)

    Abdullah, J.; Yahya, R.

    2007-05-01

    Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented.

  4. Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

    International Nuclear Information System (INIS)

    Abdullah, J.; Yahya, R.

    2007-01-01

    Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented

  5. Environmental safety providing during heat insulation works and using thermal insulation materials

    Directory of Open Access Journals (Sweden)

    Velichko Evgeny

    2017-01-01

    Full Text Available This article considers the negative effect of thermal insulating materials and products on human health and environment pollution, particularly in terms of the composition of environmentally hazardous construction products. The authors have analyzed the complex measures for providing ecological safety, sanitary and epidemiological requirements, rules and regulations both during thermal insulation works and throughout the following operation of buildings and premises. The article suggests the protective and preventive measures to reduce and eliminate the negative impact of the proceeding of thermal insulation works on the natural environment and on human health.

  6. Operating method of amorphous thin film semiconductor element

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

    1988-05-31

    The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

  7. Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

    Science.gov (United States)

    Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

    2018-05-01

    The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

  8. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  9. Guided acoustic and optical waves in silicon-on-insulator for Brillouin scattering and optomechanics

    Directory of Open Access Journals (Sweden)

    Christopher J. Sarabalis

    2016-10-01

    Full Text Available We numerically study silicon waveguides on silica showing that it is possible to simultaneously guide optical and acoustic waves in the technologically important silicon on insulator (SOI material system. Thin waveguides, or fins, exhibit geometrically softened mechanical modes at gigahertz frequencies with phase velocities below the Rayleigh velocity in glass, eliminating acoustic radiation losses. We propose slot waveguides on glass with telecom optical frequencies and strong radiation pressure forces resulting in Brillouin gains on the order of 500 and 50 000 W−1m−1 for backward and forward Brillouin scattering, respectively.

  10. Estimation of carrier mobility at organic semiconductor/insulator interface using an asymmetric capacitive test structure

    Directory of Open Access Journals (Sweden)

    Rajesh Agarwal

    2016-04-01

    Full Text Available Mobility of carriers at the organic/insulator interface is crucial to the performance of organic thin film transistors. The present work describes estimation of mobility using admittance measurements performed on an asymmetric capacitive test structure. Besides the advantage of simplicity, it is shown that at low frequencies, the measured capacitance comes from a large area of channel making the capacitance-voltage characteristics insensitive to contact resistances. 2-D numerical simulation and experimental results obtained with Pentacene/Poly(4-vinyphenol system are presented to illustrate the operation and advantages of the proposed technique.

  11. Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe {111} Topological Crystalline Insulator

    Directory of Open Access Journals (Sweden)

    Wencan Jin

    2017-10-01

    Full Text Available Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi_{2}Se_{3} has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111} thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50×10^{6}  m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.

  12. Using microtherm microporous insulation in smelter applications

    Science.gov (United States)

    MacKenzie, Iain

    2000-02-01

    Microtherm is effective in reducing shell temperatures in confined spaces where compression is severe and much insulation is required. This material can prove beneficial for applications such as cement and lime rotary kiln transition and hot zones; copper converters and anode furnaces; steel and iron ladles, tundishes, RH vessels, and blast furnaces; and aluminum filter boxes, runners, and metal transporters.

  13. Mineral insulated cables for post accident service

    International Nuclear Information System (INIS)

    McMillin, P.L.; Winkler, M.E.

    1986-01-01

    The regulatory requirement to measure the gamma radiation levels during accident conditions inside a reactor containment building is discussed. The development of a mineral-insulated cable and connector system to accurately transmit this measurement is described and a model of the response is developed

  14. A Seismic Analysis for Reflective Metal Insulation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyuhyung; Kim, Taesoon [KHNP CRI, Daejeon (Korea, Republic of)

    2016-10-15

    U.S. NRC (Nuclear Regulatory Commission) GSI- 191 (Generic Safety Issue-191) is concerned about the head-loss of emergency core cooling pumps caused by calcium silicate insulation debris accumulated on a sump screen when a loss of coolant accident (LOCA). In order to cope with the concern, many nuclear plants in U. S. have been replacing calcium silicate insulation in containment building with reflective metal insulation (RMI). In Korea, RMI has been used for only reactor vessels recently constructed, but the RMI was imported. Therefore, we have been developing the domestic design of RMI to supply to nuclear power plants under operation and construction in relation to the GSI-191. This paper covers that the structural integrity of the RMI assembly was evaluated under SSE (safety shutdown earthquake) load. An analysis model was built for the seismic test system of a reflective metal insulation assembly and pre-stress, modal, and spectrum analysis for the model were performed using a commercial structural analysis code, ANSYS. According to the results of the analyses, the buckles fastening the RMIs showed the structural integrity under the required response spectrum containing the safety shutdown earthquake loads applied to main components in containment building. Consequently, since the RMI isn't disassembled under the SSE load, the RMI is judged not to affect safety related components.

  15. Synthesis and characterization of innovative insulation materials

    Directory of Open Access Journals (Sweden)

    Skaropoulou Aggeliki

    2018-01-01

    Full Text Available Insulation elements are distinguished in inorganic fibrous and organic foamed materials. Foamed insulation materials are of great acceptance and use, but their major disadvantage is their flammability. In case of fire, they tend to transmit the flame producing toxic gases. In this paper, the synthesis and characterization of innovative inorganic insulation materials with properties competitive to commercial is presented. Their synthesis involves the mixing of inorganic raw material and water with reinforcing agent or/and foaming agent leading to the formation of a gel. Depending on raw materials nature, the insulation material is produced by freeze drying or ambient drying techniques of the gel. The raw material used are chemically benign and abundantly available materials, or industrial by-products and the final products are non-toxic and, in some cases, non-flammable. Their density and thermal conductivity was measured and found 0.02-0.06 g/cm3 and 0.03-0.04 W/mK, respectively.

  16. Insulating materials resistance in intense radiation beams

    International Nuclear Information System (INIS)

    Oproiu, Constantin; Martin, Diana; Scarlat, Florin; Timus, Dan; Brasoveanu, Mirela; Nemtanu, Monica

    2002-01-01

    The paper emphasizes the main changes of the mechanical and electrical properties of some organic insulating materials exposed to accelerated electron beams. These materials are liable to be used in nuclear plants and particle accelerators. The principal mechanical and electrical properties analyzed were: tensile strength, fracture strength, tearing on fracture, dielectric strength, electrical resistivity, dielectric constant and tangent angle of dielectric losses. (authors)

  17. Light fireproof insulating plate-formed material

    Energy Technology Data Exchange (ETDEWEB)

    Plum, B.A.; Juhl, L.F.

    1981-02-23

    Light fireproof insulating plates were produced by pressure processing of a mixture of rice-husk ashes with pearlite aluminium phosphate and glass wool. The corn size of pearlite is 0-5 mm., of rice-husk ashes 0-5 mm. and the fiber length of fibrous additive is about 25 mm.

  18. Insulating jacket for heat sensitive components

    International Nuclear Information System (INIS)

    Class, G.

    1980-01-01

    The insulating jacket for long core components of sodium-cooled reactors consists of several layers of austenitic steel, between which a woven wire mesh of the same material is fitted. It is wound in the form of a spiral bandage on the core component. (DG) [de

  19. Interfacial Coatings for Inorganic Composite Insulation Systems

    International Nuclear Information System (INIS)

    Hooker, M. W.; Fabian, P. E.; Stewart, M. W.; Grandlienard, S. D.; Kano, K. S.

    2006-01-01

    Inorganic (ceramic) insulation materials are known to have good radiation resistance and desirable electrical and mechanical properties at cryogenic and elevated temperatures. In addition, ceramic materials can withstand the high-temperature reaction cycle used with Nb3Sn superconductor materials, allowing the insulation to be co-processed with the superconductor in a wind-and-react fabrication process. A critical aspect in the manufacture of ceramic-based insulation systems is the deposition of suitable fiber-coating materials that prevent chemical reaction of the fiber and matrix materials, and thus provide a compliant interface between the fiber and matrix, which minimizes the impact of brittle failure of the ceramic matrix. Ceramic insulation produced with CTD-FI-202 fiber interfaces have been found to exhibit very high shear and compressive strengths. However, this material is costly to produce. Thus, the goal of the present work is to evaluate alternative, lower-cost materials and processes. A variety of oxide and polyimide coatings were evaluated, and one commercially available polyimide coating has been shown to provide some improvement as compared to uncoated and de-sized S2 glass

  20. Topics in magnetism: magnetic excitations in insulators

    International Nuclear Information System (INIS)

    Rezende, S.M.

    1975-01-01

    The concept of spin waves is introduced and green's functions formalism is used in connection with thermodynamic properties of ferromagnets. Simple features of magnons in ferromagnetic insulators are discussed and also of those with dipolar and anisotropic contributions in the hamiltonian. Magnons in more complex systems, e.g. antiferromagnetic crystals, are dealt with. Finally, excitation and detection of magnons are also discussed [pt

  1. Electrical machining method of insulating ceramics

    International Nuclear Information System (INIS)

    Fukuzawa, Y.; Mohri, N.; Tani, T.

    1999-01-01

    This paper describes a new electrical discharge machining method for insulating ceramics using an assisting electrode with either a sinking electrical discharge machine or a wire electrical discharge machine. In this method, the metal sheet or mesh is attached to the ceramic surface as an assisting material for the discharge generation around the insulator surface. When the machining condition changes from the attached material to the workpiece, a cracked carbon layer is formed on the workpiece surface. As this layer has an electrical conductivity, electrical discharge occurs in working oil between the tool electrode and the surface of the workpiece. The carbon is formed from the working oil during this electrical discharge. Even after the material is machined, an electrical discharge occurs in the gap region between the tool electrode and the ceramic because an electrically conductive layer is generated continuously. Insulating ceramics can be machined by the electrical discharge machining method using the above mentioned surface modification phenomenon. In this paper the authors show a machined example demonstrating that the proposed method is available for machining a complex shape on insulating ceramics. Copyright (1999) AD-TECH - International Foundation for the Advancement of Technology Ltd

  2. Power flow studies of magnetically insulated lines

    International Nuclear Information System (INIS)

    McDaniel, D.H.; Poukey, J.W.; Bergeron, K.D.; VanDevender, J.P.; Johnson, D.L.

    1977-01-01

    The designs for relativistic electron beam accelerators with power levels of 20 to 100 TW are greatly restricted by the inductance of a single diode of reasonable size. This fact leads to modular designs of very large accelerators. One concept uses several small insulators at a large radius arranged around the accelerator center. The total effective inductance is then low, but the energy must then be transported by self-magnetic insulated vacuum lines to the target volume. A triplate vacuum line configuration eases many mechanical support problems and allows more A-K gaps or feeds to be packaged around a given radius. This type of vacuum transmission line was chosen for initial experiments at Sandia. The experiments were conducted on the MITE (Magnetically Insulated Transmission Experiment) accelerator. The water pulse forming lines are connected to a vacuum triplate line through a conventional stacked insulator. Diagnostics on the experiment consisted of: (1) input V; (2) input I; (3) I monitors at the input, middle, and output of both the center conductor and ground plane of the transmission line; (4) magnetic energy analyzer to view peak electron energy in the A-K gap; (5) calorimetry; and (6) Faraday cups to look at electron current flowing across the transmission line. The main goal of the experiment is to obtain input impedance of the transmission line as a function of voltage and to measure electron loss currents. These measurements are compared to theoretical models for the input impedance and energy losses

  3. Infrared circular photogalvanic effect in topological insulators

    Science.gov (United States)

    Luo, Siyuan

    2018-04-01

    Topological insulators have attracted a lot of attention in recent years due to its unique phenomena. Circular photogalvanic effect (CPGE) is one of the important phenomena in topological insulators. Bi2Se3, as one of the 3D topological insulators, consist of a single Dirac cone at the Γ point in k-space [1], corresponding to the surface states. Controlled by the Berry curvature of the surface band, the dominant photo response due to the interband transition is helicity dependent [2]. In addition, due to the spin-momentum locking in topological insulators' surface, the sign of spin-angular-momentum of obliquely incident light and photo currents are locked together. On the other hand, Bi2Se3 consists of quintuple layers which make it possible to be exfoliated and transferred based on graphene fabrication. In this paper, Bi2Se3 devices were fabricated and Ohm contact was achieved. We experimentally demonstrated the CPGE in Bi2Se3 using 1550nm incident laser.

  4. Cladding Attachment Over Thick Exterior Insulating Sheathing

    Energy Technology Data Exchange (ETDEWEB)

    Baker, P. [Building Science Corporation, Somerville, MA (United States); Eng, P. [Building Science Corporation, Somerville, MA (United States); Lepage, R. [Building Science Corporation, Somerville, MA (United States)

    2014-01-01

    The addition of insulation to the exterior of buildings is an effective means of increasing the thermal resistance of both wood framed walls as well as mass masonry wall assemblies. For thick layers of exterior insulation (levels greater than 1.5 inches), the use of wood furring strips attached through the insulation back to the structure has been used by many contractors and designers as a means to provide a convenient cladding attachment location (Straube and Smegal 2009, Pettit 2009, Joyce 2009, Ueno 2010). The research presented in this report is intended to help develop a better understanding of the system mechanics involved and the potential for environmental exposure induced movement between the furring strip and the framing. BSC sought to address the following research questions: 1. What are the relative roles of the mechanisms and the magnitudes of the force that influence the vertical displacement resistance of the system? 2. Can the capacity at a specified deflection be reliably calculated using mechanics based equations? 3. What are the impacts of environmental exposure on the vertical displacement of furring strips attached directly through insulation back to a wood structure?

  5. A Seismic Analysis for Reflective Metal Insulation

    International Nuclear Information System (INIS)

    Kim, Kyuhyung; Kim, Taesoon

    2016-01-01

    U.S. NRC (Nuclear Regulatory Commission) GSI- 191 (Generic Safety Issue-191) is concerned about the head-loss of emergency core cooling pumps caused by calcium silicate insulation debris accumulated on a sump screen when a loss of coolant accident (LOCA). In order to cope with the concern, many nuclear plants in U. S. have been replacing calcium silicate insulation in containment building with reflective metal insulation (RMI). In Korea, RMI has been used for only reactor vessels recently constructed, but the RMI was imported. Therefore, we have been developing the domestic design of RMI to supply to nuclear power plants under operation and construction in relation to the GSI-191. This paper covers that the structural integrity of the RMI assembly was evaluated under SSE (safety shutdown earthquake) load. An analysis model was built for the seismic test system of a reflective metal insulation assembly and pre-stress, modal, and spectrum analysis for the model were performed using a commercial structural analysis code, ANSYS. According to the results of the analyses, the buckles fastening the RMIs showed the structural integrity under the required response spectrum containing the safety shutdown earthquake loads applied to main components in containment building. Consequently, since the RMI isn't disassembled under the SSE load, the RMI is judged not to affect safety related components

  6. Sound insulation requirements in the Nordic countries

    DEFF Research Database (Denmark)

    Rasmussen, Birgit

    All Nordic countries have sound insulation requirements for housing and sound classification schemes originating from a common INSTA‐proposal in the mid 90’s, but unfortunately being increasingly diversified since then. The present situation impedes development and create barriers for trade and e...

  7. Application of irradiation process for the production of thin wall wires

    International Nuclear Information System (INIS)

    Saito, E.

    1977-01-01

    The demand for thin wall crosslinked PVC or polyethylene insulated wires in Japan was about 15,000,000 dollars in value in 1975. Their annual sales in 1980 are estimated at about 40 million dollars which will account for approximately 20% of the sales of all thin wall thermoplastic insulated wires expected for the same year. A comparative study was made of the irradiation process and the chemical process for manufacture of wires with crosslinked PVC or polyethylene insulation. Having found the excellence of the irradiation process an accelerator (500 KeV, 65mA) was installed in 1973 and production was begun of several types of thin wall irradiation crosslinked PVC and polyethylene insulated wires ranging from 0.06 mm 2 to 2.0 mm 2 in the cross-sectional area of conductor, successfully putting them in extensive commercial application. This report compares the irradiation process and the chemical process, properties of several types of irradiation crosslinked PVC, and polyethylene insulated wires and their applications. (author)

  8. Recent Progress in Electrical Insulation Techniques for HTS Power Apparatus

    Science.gov (United States)

    Hayakawa, Naoki; Kojima, Hiroki; Hanai, Masahiro; Okubo, Hitoshi

    This paper describes the electrical insulation techniques at cryogenic temperatures, i.e. Cryodielectrics, for HTS power apparatus, e.g. HTS power transmission cables, transformers, fault current limiters and SMES. Breakdown and partial discharge characteristics are discussed for different electrical insulation configurations of LN2, sub-cooled LN2, solid, vacuum and their composite insulation systems. Dynamic and static insulation performances with and without taking account of quench in HTS materials are also introduced.

  9. Attic Retrofits Using Nail-Base Insulated Panels

    Energy Technology Data Exchange (ETDEWEB)

    Mallay, David [Home Innovation Research Labs; Kochkin, Vladimir [Home Innovation Research Labs

    2018-03-26

    This project developed and demonstrated a roof/attic energy retrofit solution using nail-base insulated panels for existing homes where traditional attic insulation approaches are not effective or feasible. Nail-base insulated panels (retrofit panels) consist of rigid foam insulation laminated to one face of a wood structural panel. The prefabricated panels are installed above the existing roof deck during a reroofing effort.

  10. Effects of radiation on insulation materials

    International Nuclear Information System (INIS)

    Poehlchen, R.

    1992-01-01

    This presentation will concentrate on the insulation materials which are suitable for the insulation of superconducting magnets for fusion. For the next generation of fusion machines with magnetic confinement as NET and ITER general agreement exists that the insulation will consist of fibre reinforced organic matrix material, a composite. Much effort has been put into the investigation of the radiation resistance of such materials during the last 20-30 years, see in particular the numerous reports of accelerator laboratories on this subject. But very few of the published data are relevant for the superconducting magnets of fusion machines. Either the irradiation and testing was carried out at RT or LN 2 temperature and/or the irradiation spectrum was not representative for a fusion machine and/or the materials investigated are not applicable for the insulation of S.C. fusion magnets. Therefore test programs have been launched recently, one by the NET team. The intention of the first chapter is to give guidance on the choice of materials which are suitable as insulation materials from a more general point of view. A good understanding of the coil manufacturing process is needed for this purpose. The second chapter explains the irradiation spectrum seen by the magnets. A third chapter does present the NET/ITER test programme. Step 1 was completed at the end of 1989, the second step will be carried out in the autumn of 1991. Finally, a general assessment of materials and testing methods will be given with recommendations for further testing

  11. Cellulose insulation as an air barrier

    Energy Technology Data Exchange (ETDEWEB)

    Manning, K.

    1989-10-01

    The objective of this study was to determine if a wet sprayed cellulose wall insulation system would function satisfactorily without use of a polyethylene air/vapour barrier. The research was designed to demonstrate that this particular insulation system would form enough of a barrier to air leakage, that moisture accumulation from condensation and vapour diffusion would be insignificant. Field work conducted in Alberta, involved construction of a conventional duplex housing unit which was insulated with wet sprayed cellulose in the exterior walls and dry loose-fill cellulose in the attic areas. One half of the unit did not have a polyethylene air/vapor barrier installed. Air leakage and exterior wall moisture levels were monitored for a year following construction. Data collected during this time indicated that the moisture added to the walls during the insulating process was dissipated over the study period. The presence of polyethylene sheeting had no significant effect on the moisture levels in either the wall or attic areas of the test structure. On the other hand, testing indicated that the use of polyethylene sheeting in the wall system did serve to improve blower door air test results. In conclusion, although the air leakage resistance apparently provided by the polyethylene sheeting is significant, the amount is probably not more than could otherwise be obtained by more careful attention to sealing procedures such as those used in the airtight drywall technique. A more important finding is that the use of polyethylene sheeting is not essential in a structure which has the degree of air leakage resistance provided by the insulation system used in this project. 6 figs., 2 tabs.

  12. Field evaluation of reflective insulation in south east Asia

    Science.gov (United States)

    Teh, Khar San; Yarbrough, David W.; Lim, Chin Haw; Salleh, Elias

    2017-12-01

    The objective of this research was to obtain thermal performance data for reflective insulations in a South East Asia environment. Thermal resistance data (RSI, m2 ṡ K/W) for reflective insulations are well established from 1-D steady-state tests, but thermal data for reflective insulation in structures like those found in South East Asia are scarce. Data for reflective insulations in South East Asia will add to the worldwide database for this type of energy-conserving material. RSI were obtained from heat flux and temperature data of three identical structures in the same location. One unit did not have insulation above the ceiling, while the second and third units were insulated with reflective insulation with emittance less than 0.05. RSI for the uninsulated test unit varied from 0.37 to 0.40 m2 ṡ K/W. RSI for a single-sheet reflective insulation (woven foil) varied from 2.15 to 2.26 m2 ṡ K/W, while bubble-foil insulation varied from 2.69 to 3.09 m2 ṡ K/W. The range of RSI values resulted from differences in the spacing between the reflective insulation and the roof. In addition, the reflective insulation below the roof lowered attic temperatures by as much as 9.7° C. Reductions in ceiling heat flux of 80 to 90% relative to the uninsulated structure, due to the reflective insulation, were observed.

  13. 49 CFR 236.527 - Roadway element insulation resistance.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Roadway element insulation resistance. 236.527 Section 236.527 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD... element insulation resistance. Insulation resistance between roadway inductor and ground shall be...

  14. Insulating process for HT-7U central solenoid model coils

    International Nuclear Information System (INIS)

    Cui Yimin; Pan Wanjiang; Wu Songtao; Wan Yuanxi

    2003-01-01

    The HT-7U superconducting Tokamak is a whole superconducting magnetically confined fusion device. The insulating system of its central solenoid coils is critical to its properties. In this paper the forming of the insulating system and the vacuum-pressure-impregnating (VPI) are introduced, and the whole insulating process is verified under the super-conducting experiment condition

  15. Quality labels for retrofit cavity wall insulation : a comparative analysis

    NARCIS (Netherlands)

    Rovers, Twan Johannes Hendrikus; Entrop, Alexis Gerardus; Halman, Johannes I.M.

    2017-01-01

    Retrofit cavity wall insulation can be exerted to reduce the energy use for space heating and cooling of existing buildings. In multiple countries, quality labels have emerged for this insulation service. In this research project, an evaluation framework for cavity wall insulation is developed by

  16. Remote plasma deposition of textured zinc oxide with focus on thin film solar cell applications : material properties, plasma processes and film growth

    NARCIS (Netherlands)

    Groenen, R.

    2005-01-01

    Simultaneously possessing transparency in the visible region, close to that of insulators, and electrical conductivity, close to that of metals, transparent conducting oxide (TCO) thin films form a highly attractive class of materials for a wide variety of applications like thin film solar cells,

  17. Sound insulation and energy harvesting based on acoustic metamaterial plate

    Science.gov (United States)

    Assouar, Badreddine; Oudich, Mourad; Zhou, Xiaoming

    2015-03-01

    The emergence of artificially designed sub-wavelength acoustic materials, denoted acoustic metamaterials (AMM), has significantly broadened the range of materials responses found in nature. These engineered materials can indeed manipulate sound/vibration in surprising ways, which include vibration/sound insulation, focusing, cloaking, acoustic energy harvesting …. In this work, we report both on the analysis of the airborne sound transmission loss (STL) through a thin metamaterial plate and on the possibility of acoustic energy harvesting. We first provide a theoretical study of the airborne STL and confronted them to the structure-borne dispersion of a metamaterial plate. Second, we propose to investigate the acoustic energy harvesting capability of the plate-type AMM. We have developed semi-analytical and numerical methods to investigate the STL performances of a plate-type AMM with an airborne sound excitation having different incident angles. The AMM is made of silicone rubber stubs squarely arranged in a thin aluminum plate, and the STL is calculated at low-frequency range [100Hz to 3kHz] for an incoming incident sound pressure wave. The obtained analytical and numerical STL present a very good agreement confirming the reliability of developed approaches. A comparison between computed STL and the band structure of the considered AMM shows an excellent agreement and gives a physical understanding of the observed behavior. On another hand, the acoustic energy confinement in AMM with created defects with suitable geometry was investigated. The first results give a general view for assessing the acoustic energy harvesting performances making use of AMM.

  18. Extraction magnetically insulated diode studies on Gamble II

    International Nuclear Information System (INIS)

    Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Stephanakis, S.J.; Greenly, J.

    1993-01-01

    An extraction Magnetically Insulated Diode (MID) with anode and cathode magnetic field coils has been tested on the NRL Gamble II accelerator. The purpose of the experiments is to develop an annular, intense ion beam source for testing ion beam transport physics related to light ion inertial confinement fusion. Initial experiments have been performed with surface flashover ion sources. The experimental challenge has been to obtain a tuning of the 4 magnetic field coils that results in a minimum turn-on time of the ion source and acceptable coupling to the accelerator. Results from several different geometries of magnetic field will be presented. The principal diode diagnostics are the total diode current, net ion current, and corrected diode voltage. Calculations of the magnetic field strength and geometry are performed with the ATHETA code. An active anode ion source is also under development. The initial portion of the accelerator pulse is diverted with a plasma opening switch (POS) and passed through a thin foil that will become the ion source. The foil is swiftly heated by the current pulse and gas is desorbed or diffused from the foil into the anode-cathode gap. The gas is then broken down by the current pulse, forming a dense plasma source on the anode surface. Two different foils are being used. A thin aluminum foil will work with desorbed gases, and provide a beam that is predominately protons. A hydrogen loaded titanium foil, with a paladium overcoating, will use diffused hydrogen, and produce a high purity proton beam. The net result of the POS and active anode plasma source should be much faster ion turn-on time, and better coupling of the ion source to the accelerator. Preliminary results with the active anode sources will be presented

  19. Evaluation of unencapsulated ceramic monolithic and MOS thin-film capacitors (25 to 3000C)

    International Nuclear Information System (INIS)

    Nance, W.R.

    1982-01-01

    Several commercial monolithic ceramic and thin-film MOS chip capacitors were evaluated for use in high temperature (300 0 C) geothermal instrumentation. Characteristics of the commonly used dielectric materials (NPO, X7R, BX) and temperature dependence of the insulation resistance are briefly discussed. Some ceramic capacitors with NPO dielectric materials had insulation resistances above 10 megohms at 300 0 C and less than 2% change in capacitance from 25 0 C to 300 0 C, while the X7R and BX dielectric materials exhibited insulation resistances below 10 megohm and changes in capacitance greater then 50%. The thin-film capacitors showed good stability at 300 0 C. However, during aging, bonds and bond pads presented a problem causing intermittently open circuits for some of the devices

  20. Current-voltage relation for thin tunnel barriers: Parabolic barrier model

    DEFF Research Database (Denmark)

    Hansen, Kim; Brandbyge, Mads

    2004-01-01

    We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant...

  1. Luminescence properties of ZnO layers grown on Si-on-insulator substrates

    International Nuclear Information System (INIS)

    Kumar, Bhupendra; Gong, Hao; Vicknesh, S.; Chua, S. J.; Tripathy, S.

    2006-01-01

    The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E 2 high optical phonon mode near 438 cm -1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems

  2. Sound insulation performance of plates with interconnected distributed piezoelectric patches

    Directory of Open Access Journals (Sweden)

    Yi Kaijun

    2017-02-01

    Full Text Available This paper deals with the sound insulation performance of a thin plate with interconnected distributed piezoelectric patches. Piezoelectric patches are periodically bonded on the surfaces of the plate in a collocated fashion, and are interconnected via an inductive circuit network. This piezoelectric system is termed as piezo-electromechanical (PEM plate in the paper. Homogenization methods are involved under a sub-wavelength assumption to analytically develop the dynamical equations for the PEM plate. The dispersion relationships and energy densities of the wave modes propagating in the PEM plate are studied; the sub-wavelength assumption is verified for the simulations in this paper. The coincidence frequency of the PEM plate is researched, and results show that the coincidence frequency of the PEM plate will disappear at certain circumstances; mathematical and physical explanations are made for this phenomenon. The disappearance of the coincidence frequency is used to optimize the value of inductance, for the purpose of improving the sound transmission loss of the PEM plate.

  3. Process for manufacture of Te microwire in glass insulation

    International Nuclear Information System (INIS)

    Bodiul, Pavel; Nicolaeva, Alibina; Konopko, Leonid; Bondarciuc, Nicolae

    2010-01-01

    The invention relates to the manufacturing of microwires in glass insulation and can be used in electronics and in the manufacturing of thermoelectrodes for thermoelectric sensors. The process for manufacture of Te microwire in glass insulation consists in softening the Te sample and its pulling in glass insulation. Near the microwire pulling zone through the furnace is maintained a temperature of 430-440 degrees Celsius, which causes the solidification firstly of Te microwire, and then of glass insulation. The result of the invention is to obtain Te microwires in glass insulation of high quality with a diameter of 50-100 μm and a length of 3-15 cm.

  4. High-performance insulator structures for accelerator applications

    International Nuclear Information System (INIS)

    Sampayan, S.E.; Caporaso, G.J.; Sanders, D.M.; Stoddard, R.D.; Trimble, D.O.; Elizondo, J.; Krogh, M.L.; Wieskamp, T.F.

    1997-05-01

    A new, high gradient insulator technology has been developed for accelerator systems. The concept involves the use of alternating layers of conductors and insulators with periods of order 1 mm or less. These structures perform many times better (about 1.5 to 4 times higher breakdown electric field) than conventional insulators in long pulse, short pulse, and alternating polarity applications. We describe our ongoing studies investigating the degradation of the breakdown electric field resulting from alternate fabrication techniques, the effect of gas pressure, the effect of the insulator-to-electrode interface gap spacing, and the performance of the insulator structure under bi-polar stress

  5. Strongly suppressed proximity effect and ferromagnetism in topological insulator/ferromagnet/superconductor thin film trilayers of Bi2Se3/SrRuO3/underdoped YBa2Cu3O x : a possible new platform for Majorana nano-electronics

    Science.gov (United States)

    Koren, Gad

    2018-07-01

    We report properties of a topological insulator–ferromagnet–superconductor trilayers comprised of thin films of 20 nm thick {Bi}}2{Se}}3 on 10 nm SrRuO3 on 30 nm {YBa}}2{Cu}}3{{{O}}}x. As deposited trilayers are underdoped and have a superconductive transition with {{T}}{{c}} onset at 75 K, zero resistance at 65 K, {{T}}Cueri} at 150 K and {{T}}* of about 200 K. Further reannealing under vacuum yields the 60 K phase of {YBa}}2{Cu}}3{{{O}}}x which still has zero resistance below about 40 K. Only when 10 × 100 microbridges were patterned in the trilayer, some of the bridges showed resistive behavior all the way down to low temperatures. Magnetoresistance versus temperature of the superconductive ones showed the typical peak due to flux flow against pinning below {{T}}{{c}}, while the resistive ones showed only the broad leading edge of such a peak. All this indicates clearly weak-link superconductivity in the resistive bridges between superconductive {YBa}}2{Cu}}3{{{O}}}x grains via the topological and ferromagnetic cap layers. Comparing our results to those of a reference trilayer (RTL) with the topological {Bi}}2{Se}}3 layer substituted by a non-superconducting highly overdoped {La}}1.65{Sr}}0.35{CuO}}4, indicates that the superconductive proximity effect as well as ferromagnetism in the topological trilayer are actually strongly suppressed compared to the non-topological RTL. This strong suppression could originate in lattice and Fermi levels mismatch as well as in short coherence length and unfavorable effects of strong spin–orbit coupling in {Bi}}2{Se}}3 on the d-wave pairing of {YBa}}2{Cu}}3{{{O}}}x. Proximity induced edge currents in the SRO/YBCO layer could lead to Majorana bound states, a possible signature of which is observed in the present study as zero bias conductance peaks.

  6. Chemically Designed Metallic/Insulating Hybrid Nanostructures with Silver Nanocrystals for Highly Sensitive Wearable Pressure Sensors.

    Science.gov (United States)

    Kim, Haneun; Lee, Seung-Wook; Joh, Hyungmok; Seong, Mingi; Lee, Woo Seok; Kang, Min Su; Pyo, Jun Beom; Oh, Soong Ju

    2018-01-10

    With the increase in interest in wearable tactile pressure sensors for e-skin, researches to make nanostructures to achieve high sensitivity have been actively conducted. However, limitations such as complex fabrication processes using expensive equipment still exist. Herein, simple lithography-free techniques to develop pyramid-like metal/insulator hybrid nanostructures utilizing nanocrystals (NCs) are demonstrated. Ligand-exchanged and unexchanged silver NC thin films are used as metallic and insulating components, respectively. The interfaces of each NC layer are chemically engineered to create discontinuous insulating layers, i.e., spacers for improved sensitivity, and eventually to realize fully solution-processed pressure sensors. Device performance analysis with structural, chemical, and electronic characterization and conductive atomic force microscopy study reveals that hybrid nanostructure based pressure sensor shows an enhanced sensitivity of higher than 500 kPa -1 , reliability, and low power consumption with a wide range of pressure sensing. Nano-/micro-hierarchical structures are also designed by combining hybrid nanostructures with conventional microstructures, exhibiting further enhanced sensing range and achieving a record sensitivity of 2.72 × 10 4 kPa -1 . Finally, all-solution-processed pressure sensor arrays with high pixel density, capable of detecting delicate signals with high spatial selectivity much better than the human tactile threshold, are introduced.

  7. Physics Colloquium: Theory of the spin wave Seebeck effect in magnetic insulators

    CERN Multimedia

    Université de Genève

    2011-01-01

    Geneva University Physics Department 24, quai Ernest-Ansermet CH-1211 Geneva 4 Lundi 28 février 2011 17h00 - École de Physique, Auditoire Stückelberg Theory of the spin wave Seebeck effect in magnetic insulators Prof. Gerrit Bauer Delft University of Technology The subfield of spin caloritronics addresses the coupling of heat, charge and spin currents in nanostructures. In the center of interest is here the spin Seebeck effect, which was discovered in an iron-nickel alloy. Uchida et al. recently observed the effect also in an electrically insulating Yttrium Iron Garnett (YIG) thin magnetic film. To our knowledge this is the first observation of a Seebeck effect generated by an insulator, implying that the physics is fundamentally different from the conventional Seebeck effect in metals. We explain the experiments by the pumping of a spin current into the detecting contacts by the thermally excited magnetization dynamics. In this talk I will give a brief overview over the state o...

  8. Surface Thermal Insulation and Pipe Cooling of Spillways during Concrete Construction Period

    Directory of Open Access Journals (Sweden)

    Wang Zhenhong

    2014-01-01

    Full Text Available Given that spillways adopt a hydraulic thin concrete plate structure, this structure is difficult to protect from cracks. The mechanism of the cracks in spillways shows that temperature stress is the major reason for cracks. Therefore, an effective way of preventing cracks is a timely and reasonable temperature-control program. Studies show that one effective prevention method is surface thermal insulation combined with internal pipe cooling. The major factors influencing temperature control effects are the time of performing thermal insulation and the ways of internal pipe cooling. To solve this problem, a spillway is taken as an example and a three-dimensional finite element program and pipe cooling calculation method are adopted to conduct simulation calculation and analysis on the temperature fields and stress fields of concretes subject to different temperature-control programs. The temperature-control effects are then compared. Optimization results show that timely and reasonable surface thermal insulation and water-flowing mode can ensure good temperature-control and anticrack effects. The method has reference value for similar projects.

  9. On the sound insulation of acoustic metasurface using a sub-structuring approach

    Science.gov (United States)

    Yu, Xiang; Lu, Zhenbo; Cheng, Li; Cui, Fangsen

    2017-08-01

    The feasibility of using an acoustic metasurface (AMS) with acoustic stop-band property to realize sound insulation with ventilation function is investigated. An efficient numerical approach is proposed to evaluate its sound insulation performance. The AMS is excited by a reverberant sound source and the standardized sound reduction index (SRI) is numerically investigated. To facilitate the modeling, the coupling between the AMS and the adjacent acoustic fields is formulated using a sub-structuring approach. A modal based formulation is applied to both the source and receiving room, enabling an efficient calculation in the frequency range from 125 Hz to 2000 Hz. The sound pressures and the velocities at the interface are matched by using a transfer function relation based on ;patches;. For illustration purposes, numerical examples are investigated using the proposed approach. The unit cell constituting the AMS is constructed in the shape of a thin acoustic chamber with tailored inner structures, whose stop-band property is numerically analyzed and experimentally demonstrated. The AMS is shown to provide effective sound insulation of over 30 dB in the stop-band frequencies from 600 to 1600 Hz. It is also shown that the proposed approach has the potential to be applied to a broad range of AMS studies and optimization problems.

  10. Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

    2005-01-01

    Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

  11. Interaction of slow highly-charged ions with metals and insulators

    International Nuclear Information System (INIS)

    Yamazaki, Y.

    2007-01-01

    Interaction of slow highly charged ions with insulator as well as metallic surfaces is discussed. In addition to the usual flat surface targets, studies with thin foils having a multitude of straight holes of ∼100 nm in diameter (micro-capillary foil) are introduced, which provide various unique information on the above surface interaction. In the case of an insulator micro-capillary foil, a so-called guiding effect was observed, where slow highly charged ions can transmit through the capillary tunnel keeping their initial charge state even when the capillary axis is tilted against the incident beam. A similar guiding effect has recently been found for slow highly-charged ions transmitted through a single tapered glass capillary. In both cases, the guiding effects are expected to be governed by a self-organized charging and discharging of the inner-wall of the insulator capillary. One of the prominent features of this guiding effect with the tapered capillary is the formation of a nano-size beam, which can be applied in various fields of science including surface nano-modification/analysis, nano-surgery of living cells, etc

  12. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

    Science.gov (United States)

    Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

    2015-12-23

    We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

  13. Design of Chern insulating phases in honeycomb lattices

    Science.gov (United States)

    Pickett, Warren E.; Lee, Kwan-Woo; Pentcheva, Rossitza

    2018-06-01

    The search for robust examples of the magnetic version of topological insulators, referred to as quantum anomalous Hall insulators or simply Chern insulators, so far lacks success. Our groups have explored two distinct possibilities based on multiorbital 3d oxide honeycomb lattices. Each has a Chern insulating phase near the ground state, but materials parameters were not appropriate to produce a viable Chern insulator. Further exploration of one of these classes, by substituting open shell 3d with 4d and 5d counterparts, has led to realistic prediction of Chern insulating ground states. Here we recount the design process, discussing the many energy scales that are active in participating (or resisting) the desired Chern insulator phase.

  14. Economical evaluation of damaged vacuum insulation panels in buildings

    Science.gov (United States)

    Kim, Y. M.; Lee, H. Y.; Choi, G. S.; Kang, J. S.

    2015-12-01

    In Korea, thermal insulation standard of buildings have been tightened annually to satisfy the passive house standard from the year 2009. The current domestic policies about disseminating green buildings are progressively conducted. All buildings should be the zero energy building in the year 2025, obligatorily. The method is applied to one of the key technologies for high-performance insulation for zero energy building. The vacuum insulation panel is an excellent high performance insulation. But thermal performance of damaged vacuum insulation panels is reduced significantly. In this paper, the thermal performance of damaged vacuum insulation panels was compared and analyzed. The measurement result of thermal performance depends on the core material type. The insulation of building envelope is usually selected by economic feasibility. To evaluate the economic feasibility of VIPs, the operation cost was analyzed by simulation according to the types and damaged ratio of VIPs

  15. Thermally-insulating layer for nuclear reactors

    International Nuclear Information System (INIS)

    1975-01-01

    The thermally-insulating layer has been designed both for insulating surfaces within the core of a nuclear reactor and transmitting loads such as the core-weight. Said layer comprises a layer of bricks and a layer of tiles with smaller clearance between the tiles than between the bricks, the latter having a reduced cross-section against the tiles so as to be surrounded by relatively large interconnected ducts forming a continuous chamber behind the tile-layer in order to induce a substantial decreases in the transverse flow of the reactor-core coolant. The core preferably comprises hexagonal columns supported by rhomb-shaped plates, with channels distributed so as to mix the coolant of twelve columns. The plates are separated from support-tiles by means of pillars [fr

  16. Nuclear reactor insulation and preheat system

    International Nuclear Information System (INIS)

    Wampole, N.C.

    1978-01-01

    An insulation and preheat system is disclosed for preselected components of a fluid cooled nuclear reactor. A gas tight barrier or compartment of thermal insulation surrounds the selected components and includes devices to heat the internal atmosphere of the ocmpartment. An external surface of the compartment of enclosure is cooled, such as by a circulating fluid. The heating devices provide for preheating of the components, as well as maintenance of a temperature sufficient to ensure that the reactor coolant fluid will not solidify during shutdown. The external cooling limits the heat transferred to other plant structures, such as supporting concrete and steel. The barrier is spaced far enough from the surrounded components so as to allow access for remote or manual inspection, maintenance, and repair

  17. Self-magnetically insulated ion diode

    International Nuclear Information System (INIS)

    VanDevender, J.; Quintenz, J.; Leeper, R.; Johnson, D.; Crow, J.

    1981-01-01

    Light ion diodes for producing 1--100 TW ion beams are required for inertial confinement fusion. The theory, numerical simulations, and experiments on a self-magnetically insulated ion diode are presented. The treatment is from the point of view of a self-magnetically insulated transmission line with an ion loss current and differs from the usual treatment of the pinched electron beam diode. The simulations show that the ratio V/IZ 0 =0.25 in such a structure with voltage V, local total current I, and local vacuum wave impedance Z 0 . The ion current density is enhanced by a factor of approximately 2 over the simple space-charge limited value. The simulation results are verified in an experiment. An analytical theory is then presented for scaling the results to produce a focused beam of protons with a power of up to 10 13 W

  18. Development of radiation resistant PEEK insulation cable

    International Nuclear Information System (INIS)

    Mio, Keigo; Ogiwara, Norio; Hikichi, Yusuke; Furukori, Hisayoshi; Arai, Hideyuki; Nishizawa, Daiji; Nishidono, Toshiro

    2009-04-01

    Material characterization and development has been carried out for cable insulation suitable for use in the J-PARC 3-GeV RCS radiation environment. In spite of its high cost, PEEK (polyether-ether-ketone) has emerged as the leading candidate satisfying requirements of being non-halogen based, highly incombustible and with radiation resistant at least 10 MGy, along with the usual mechanical characteristics such as good elongation at break, which are needed in a cable insulation. Gamma-ray irradiation tests have been done in order to study radiation resistance of PEEK cable. Further, mechanical, electrical and fire retardant characteristics of a complete cable such as would be used at the J-PARC RCS were investigated. As a result, PEEK cables were shown to be not degraded by radiation up to at least 10 MGy, and thus could be expected to operate stably under the 3-GeV RCS radiation environment. (author)

  19. Correlations in hydrothermal properties of building insulation

    International Nuclear Information System (INIS)

    Antonyová, A

    2013-01-01

    The contribution comprises analysis that is based on scientific work as a part of participation on the international research project carried out at the University of Prešov in Prešov and Vienna University of Technology entitled 'Detection and Management of Risk Processes in Building Insulation' and numbered SRDA SK-AT-0008-10. Statistical approach with correlations among humidity, time and temperature values in the space between the wall and building insulation uses the set of data obtained during the measurement series as testing using a new technology with equipment that does not influence the environment properties in the space. Therefore such real mapping can bring a real picture of possible condensation as a risk process in the building envelope.

  20. Edge forward mechanical protection for porcelain insulators

    Energy Technology Data Exchange (ETDEWEB)

    deCasseres, D.K.

    1987-12-01

    Vandal damage to exposed outdoor insulators of all types has become an increasing problem. Porcelain is susceptible to impact fracture, and Area Boards have frequently found it necessary to protect expensive and often highly vulnerable terminating assemblies from the unwelcome attention of hooligans. Various means of physical protection can be used, but many of these are highly demanding in terms of maintenance. This article discusses the 'state of the art' in insulator protection, and describes the design and development of a new concept in the field-the Shed Protector-a number of which are now installed on 132kV sealing ends throughout the Electricity Supply Industry.

  1. Excavationless Exterior Foundation Insulation Exploratory Study

    Energy Technology Data Exchange (ETDEWEB)

    Mosiman, G.; Wagner, R.; Schirber, T.

    2013-02-01

    The key objective of this exploratory study was to investigate the feasibility of the development or adoption of technologies that would enable a large percentage of existing homes in cold climates to apply a combination 'excavationless' soil removal process with appropriate insulation and water management on the exterior of existing foundations at a low cost. Our approach was to explore existing excavation and material technologies and systems to discover whether potential successful combinations existed.

  2. Organic insulator studies at Los Alamos

    International Nuclear Information System (INIS)

    Parkin, D.M.; Clinard, F.W.

    1981-01-01

    The effects of radiation on the structural and electrical properties of organic insulators to be used in superconducting magnets in fusion devices has been identified as a critical materials problem. These materials will be exposed to both γ-ray and neutron radiation. LANL has been asked by the OFE Materials Branch to look at the relationship between the effects of γ-ray and neutron radiation effects. Some thoughts on planning the program are outlined

  3. D.B.S. in disordered insulators

    International Nuclear Information System (INIS)

    Bunch, J.M.

    1976-01-01

    These studies were undertaken in order to determine insulator properties for the CTR program. Most of the d.b.s. studies so far have been with various forms of Al 2 O 3 . Some work using fission neutrons and 15-MeV protons along with some high-energy heavy ions is briefly described. Attempts to measure d.b.s. and other electrical properties are mentioned

  4. Electronic correlations in insulators, metals and superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sentef, Michael Andreas

    2010-12-03

    In this thesis dynamical mean-field methods in combination with a continuous-time quantum Monte Carlo impurity solver are used to study selected open problems of condensed matter theory. These problems comprise the effect of correlations and their quantification in covalent band insulators, non-local correlation effects and their intriguing consequences in frustrated two-dimensional systems, and a phenomenological approach to investigate temperature-dependent transport in graphene in the presence of disorder. (orig.)

  5. Spectral correlations in Anderson insulating wires

    Science.gov (United States)

    Marinho, M.; Micklitz, T.

    2018-01-01

    We calculate the spectral level-level correlation function of Anderson insulating wires for all three Wigner-Dyson classes. A measurement of its Fourier transform, the spectral form factor, is within reach of state-of-the-art cold atom quantum quench experiments, and we find good agreement with recent numerical simulations of the latter. Our derivation builds on a representation of the level-level correlation function in terms of a local generating function which may prove useful in other contexts.

  6. Building ceramics with improved thermal insulation parameters

    Directory of Open Access Journals (Sweden)

    Rzepa Karol

    2016-01-01

    Full Text Available One of the most important performance characteristics of masonry units is their high thermal insulation. There are many different ways to improve this parameter, however the most popular methods in case of ceramic masonry units are: addition of pore-creating raw materials and application of proper hole pattern. This study was an attempt to improve thermal insulation of ceramics by applying thermal insulation additives. Perlite dust created as a subgrain from expansion of perlite rock was used. Perlite subgrain is not very popular among consumers, that’s why it’s subjected to granulation to obtain coarse grain. The authors presented concept of direct application of perlite dust for the production of building ceramics with improved thermal insulation. Fineness of this additive is asset for molding of ceramic materials from plastic masses. Based on the results it was found that about 70% perlite by volume can be added to obtain material with a coefficient of heat conductivity of 0,37 W/mK. Higher content of this additive in ceramic mass causes deterioration of its rheological properties. Mass loses its plasticity, it tears up and formed green bodies are susceptible to deformation. During sintering perlite takes an active part in compaction process. Higher sintering dynamics is caused by: high content of alkali oxides in perlite and glass nature of perlite. Alkali oxides generate creation of liquid phase which intensifies mass compaction processes. Active role of perlite in sintering process causes good connection of its grains with clay groundwork which is important factor for mechanical parameters of ceramic materials. It was also noted that addition of perlite above 40% by volume of mass effectively neutralized negative effect of efflorescence in ceramic materials.

  7. NDE of ceramic insulator blanks by radiography

    International Nuclear Information System (INIS)

    Sarvanan, S.; Venkatraman, B.; Jayakumar, T.; Baldev Raj

    1996-01-01

    The production of ceramic insulators in electrical industry involves a number of steps, one of which is the green blank. The defects such as voids and crack can be present in the extruded green blank. One of the best non-destructive evaluation (NDE) technique radiography. This paper deals with the development of methodology based on theoretical modeling for the examination of ceramics by high sensitivity radiography. (author)

  8. Sound insulation design of modular construction housing

    OpenAIRE

    Yates, D. J.; Hughes, Lawrence; Campbell, A.

    2007-01-01

    This paper provides an insight into the acoustic issues of modular housing using the Verbus System of construction. The paper briefly summarises the history of the development of Verbus modular housing and the acoustic design considerations of the process. Results are presented from two sound insulation tests conducted during the course of the project. The results are discussed in terms of compliance with Approved Document E1 and increased performance standards such as EcoHomes2.

  9. Thermic insulation in the United States

    Energy Technology Data Exchange (ETDEWEB)

    Nicolaon, G. (Ambassade de France a New York (USA)); Atlas, O. (Illinois Institute of Technology, Chicago, (USA))

    1984-01-30

    At present, thermic insulation accounts for 13% of the savings which have been made and this percentage should increase substantially in the future. The ideal insulation material must have low thermic conductivity, but also be light, have a low dilatation coefficient, good mechanical resistance and be fireproof and non-toxic. Rock wool and above all glass wool have the major portion in the insulation market with about 75% of the total. The prospects for an increase in sales are average: 6 to 7% per year until 1990 with a stabilization or a decrease after this date. Production is concentrated in the hands of about ten producers. The insulation with a cellulose base -with the addition of a combustion inhibitor, usually borax- represent about 15% of the market. Manufacturers are numerous and the production units are small. Any serious evaluation of the future of this product is difficult to make. However, it should be noted that combustion inhibition is one of the main factors of success of this product and constitutes a relatively active field of research. Perlite and vermiculite have a marginal part of the market which is concentrated in the hands of a few dozen producers. Their future seems promising and their production should double between now and the end of the century. There is also the field of plastics which has to be considered and notably polystyrene, polyurethanes and polyisocyanates. These can be injected and moulded in situ. To the extent that toxicity studies can definitively conclude that they are not harmful (urea-formol resins have just been prohibited), their future is brillant and their growth rate could reach about 200% per year. The big chemical and pharmaceutical companies are interested in these products and their portion of the market can rapidly go beyond their present 6 to 8%.

  10. Metal-insulator transition in vanadium dioxide

    International Nuclear Information System (INIS)

    Zylbersztejn, A.; Mott, N.F.

    1975-01-01

    The basic physical parameters which govern the metal-insulator transition in vanadium dioxide are determined through a review of the properties of this material. The major importance of the Hubbard intra-atomic correlation energy in determining the insulating phase, which was already evidence by studies of the magnetic properties of V 1 -/subx/Cr/subx/O 2 alloys, is further demonstrated from an analysis of their electrical properties. An analysis of the magnetic susceptibility of niobium-doped VO 2 yields a picture for the current carrier in the low-temperature phase in which it is accompanied by a spin cloud (owing to Hund's-rule coupling), and has therefore an enhanced mass (m approx. = 60m 0 ). Semiconducting vanadium dioxide turns out to be a borderline case for a classical band-transport description; in the alloys at high doping levels, Anderson localization with hopping transport can take place. Whereas it is shown that the insulating phase cannot be described correctly without taking into account the Hubbard correlation energy, we find that the properties of the metallic phase are mainly determined by the band structure. Metallic VO 2 is, in our view, similar to transition metals like Pt or Pd: electrons in a comparatively wide band screening out the interaction between the electrons in a narrow overlapping band. The magnetic susceptibility is described as exchange enhanced. The large density of states at the Fermi level yields a substantial contribution of the entropy of the metallic electrons to the latent heat. The crystalline distortion removes the band degeneracy so that the correlation energy becomes comparable with the band width and a metal-insulator transition takes place

  11. Phase Separation in Doped Mott Insulators

    Directory of Open Access Journals (Sweden)

    Chuck-Hou Yee

    2015-04-01

    Full Text Available Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts that the transition is percolative and should exhibit Coulomb frustration.

  12. Coherence and correlations in a Mott insulator

    International Nuclear Information System (INIS)

    Gerbier, F.; Widera, A.; Foelling, S.; Mandel, O.; Gericke, T.; Bloch, I.

    2005-01-01

    The observation of the super fluid to Mott insulator transition has triggered an intense interest in studying ultracold quantum gases in optical lattices. Such a transition is commonly associated with the disappearance of the interference pattern observed when releasing a coherent (i.e. Bose condensed) ensemble from the lattice. In this talk, I will show that even in the insulating phase, the visibility of this interference pattern remains finite. Our results show that although long-range order is absent, short-range coherence still persists in a rather broad range, and that this can be identified as a characteristic feature of the system for large, but finite lattice depths. For even deeper lattices, the visibility is close to zero, and the interference pattern unobservable. I will explain that information is still present in such featureless images, and can be extracted by studying the density-density correlation function of the expanded cloud, as proposed theoretically. A sharp diffraction-like pattern observed in the correlations reveals the underlying lattice structure, and can be understood by generalizing the well-known Hanbury-Brown and Twiss effect to many bosonic sources '' emitting '' from each lattice site. This new detection method allows in principle the detection of spin ordering in a multi-component Mott insulator. As a first step in this direction, we have recently observed spin dynamics in a Mott insulator, where a spin-dependent collisional coupling induces strongly under damped Rabi oscillations between two-particle states with the same total magnetization. I will briefly report on these results. (author)

  13. Fabricate-On-Demand Vacuum Insulating Glazings

    Energy Technology Data Exchange (ETDEWEB)

    McCamy, James W. [PPG Industries, Inc., Pittsburgh, PA (United States)

    2017-09-19

    PPG proposed to design a fabricate-on-demand manufacturing process to overcome the cost and supply chain issues preventing widespread adoption of vacuum insulated glazing (VIG) units. To do so, we focused on improving three areas of VIG manufacturing that drive high costs and limit the ability for smaller manufacturers to enter the market: edge sealing, pillar design/placement, and evacuating the VIG.

  14. Electronic correlations in insulators, metals and superconductors

    International Nuclear Information System (INIS)

    Sentef, Michael Andreas

    2010-01-01

    In this thesis dynamical mean-field methods in combination with a continuous-time quantum Monte Carlo impurity solver are used to study selected open problems of condensed matter theory. These problems comprise the effect of correlations and their quantification in covalent band insulators, non-local correlation effects and their intriguing consequences in frustrated two-dimensional systems, and a phenomenological approach to investigate temperature-dependent transport in graphene in the presence of disorder. (orig.)

  15. Plasma immersion ion implantation into insulating materials

    International Nuclear Information System (INIS)

    Tian Xiubo; Yang Shiqin

    2006-01-01

    Plasma immersion ion implantation (PIII) is an effective surface modification tool. During PIII processes, the objects to be treated are immersed in plasmas and then biased to negative potential. Consequently the plasma sheath forms and ion implantation may be performed. The pre-requirement of plasma implantation is that the object is conductive. So it seems difficult to treat the insulating materials. The paper focuses on the possibilities of plasma implantation into insulting materials and presents some examples. (authors)

  16. Thermal conductivity: recent developments on insulating and new materials; La conductivite thermique: developpements recents sur les isolants et les materiaux nouveaux

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-12-31

    This workshop organized by the thermo-kinetics section of the French society of thermal engineers deals with recent developments concerning insulating, dielectric and composite materials. The seven papers presented during this workshop concern the methods and results of thermal conductivity measurements performed in these materials and the possible applications of these materials in aerospace industry (carbon foams, ceramic-based composite materials), civil engineering (glazing materials, aerogels), power electronics (dielectric thin films, ceramics), and in other industries (heat resistant and thermal insulating materials). (J.S.)

  17. Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO{sub 3} insulator

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, C.; Jia, Q.X.; Fan, Y.; Hundley, M.F.; Reagor, D.W.; Hawley, M.E.; Peterson, D.E.

    1998-07-01

    The authors report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La{sub 0.7}Sr{sub 0.3})MnO{sub 3} ferromagnetic electrodes and a SrTiO{sub 3} insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30% is observed below 300 Oe at low temperatures (T < 100 K).

  18. Metallic insulation transport and strainer clogging tests

    International Nuclear Information System (INIS)

    Hyvaerinen, J.; Hongisto, O.

    1994-06-01

    Experiments to probe the transport and clogging properties of metallic (metal reflective) insulation have been carried out in order to provide data for evaluation of their influence on the emergency core cooling and containment spray systems of the Finnish boiling water reactors in the event of a design basis accident. The specific metallic insulation tested was DARMET, provided by Darchem Engineering Ltd. The inner foils of Darmet are dimped. Available literature on the metallic insulation performance under design basis accident conditions has been reviewed. On the basis of the review a parametric approach has been chosen for the transport and clogging experiments. This approach involves testing a wide size range of various shapes of foil pieces. Five sets of experiments have been carried out. The first three sets investigate transport properties of the foil pieces, starting from sedimentation in stagnant waste pool and proceeding to transport in horizontal and vertically circulating flows. The clogging experiments have been addressed the differential pressures obtained due to accumulation of both pure and metallic and a mixture of metallic and fibrous (mineral wool) depris. (4 refs., 24 figs., 2 tabs.)

  19. Improved cable insulation for superconducting magnets

    International Nuclear Information System (INIS)

    Anerella, M.; Ghosh, A.K.; Kelly, E.; Schmalzle, J.; Willen, E.; Fraivillig, J.; Ochsner, J.; Parish, D.J.

    1993-01-01

    Several years ago, Brookhaven joined with DuPont in a cooperative effort to develop improved cable insulation for SSC superconducting dipole magnets. The effort was supported by the SSC Central Design Group and later the SSC Laboratory. It was undertaken because turn-to-turn and midplane shorts were routinely being experienced during the assembly of magnets with coils made of the existing Kapton/fiberglass (K/FG) system of Kapton film overwrapped with epoxy-impregnated fiberglass tape. Dissection of failed magnets showed that insulation disruption and punch-through was occurring near the inner edges of turns close to the magnet midplane. Coil pressures of greater than 17 kpsi were sufficient to disrupt the insulation at local high spots where the cable had been strongly compacted in the keystoning operation during cable manufacture. In the joint development program, numerous combinations of polyimide films manufactured by DuPont with varying configurations and properties (including thickness) were subjected to tests at Brookhaven. Early tests were bench trials using wrapped cable samples. The most promising candidates were used in coils and many of these promising candidates were used in coils and many of these assembled and tested as magnets in both the SSC and RHIC magnet programs currently underway. The Kapton CI (CI) system that has been adopted represents a suitable compromise of numerous competing factors. It exhibits improved performance in the critical parameter of compressive punch-through resistance as well as other advantages over the K/FG system

  20. Improved cable insulation for superconducting magnets

    International Nuclear Information System (INIS)

    Anerella, M.; Ghosh, A.K.; Kelly, E.; Schmalzle, J.; Willen, E.; Fraivillig, J.; Ochsner, J.; Parish, D.J.

    1993-01-01

    Several years ago, Brookhaven joined with DuPont in a cooperative effort to develop improved cable insulation for SSC superconducting dipole magnets. The effort was supported by the SSC Central Design Group and later the SSC Laboratory. It was undertaken because turn-to-turn and midplane shorts were routinely being experienced during the assembly of magnets with coils made of the existing Kapton/Fiberglass (K/FG) system of Kapton film overwrapped with epoxy-impregnated fiberglass tape. Dissection of failed magnets showed that insulation disruption and punch-through was occurring near the inner edges of turns close to the magnet midplane. Coil pressures of greater than 17 kpsi were sufficient to disrupt the insulation at local high spots where wires in neighboring turns crossed one another and where the cable had been strongly compacted in the keystoning operation during cable manufacture. In the joint development program, numerous combinations of polyimide films manufactured by DuPont with varying configurations and properties (including thickness) were subjected to tests at Brookhaven. Early tests were bench trials using wrapped cable samples. The most promising candidates were used in coils and many of these assembled and tested as magnets in both the SSC and RHIC magnet programs currently underway. The Kapton CI (CI) system that has been adopted represents a suitable compromise of numerous competing factors. It exhibits improved performance in the critical parameter of compressive punch-through resistance as well as other advantages over the K/FG system

  1. Fabrication of insulator nanocapillaries from diatoms

    International Nuclear Information System (INIS)

    Bereczky, R.J.; Tokesi, K.

    2006-01-01

    Complete text of publication follows. Diatoms are unicellular microscopic organisms with silicon-dioxide based skeleton enveloped with an organic material, which composes essentially polysaccharides and proteins (see Fig. 1a.). As it was shown, the valva of the diatoms build up almost from clean silicondioxide [1]. Therefore, removing the organic compounds from the diatom, we can have in our hand an ideal, about 100 μ m-sized, and almost cylindrical shaped insulating nanostructure. There are various techniques available to disembarrass the diatom from its organic compounds. We used the so called hydrogen peroxide method. The advantageous properties of this method are the followings: a) this is one of the fastest procedures among the possible methods, b) do not require special equipment, c) cheap, and last but not least it is less harmful for health compared to other methods. This procedure can be an alternative way of the fabrication of insulator nanocapillaries. In this case the preparation of the nanocapillaries is simple and quick. Moreover, we do not need to invest expensive special techniques, (like micromachining-, electrochemical etching technique, moulding process etc) as it was necessary for the case of previously developed method producing insulator nanocapillaries [2,3]. Fig. 1b and Fig. 1c. show the scanning electron micrograph of the skeleton of the diatoms. The size of the cylindrical holes are roughly 200 nm (see Fig. 1c). (author)

  2. Insulation system in an integrated motor compressor

    Energy Technology Data Exchange (ETDEWEB)

    Sihvo, V.

    2010-07-01

    A high-speed and high-voltage solid-rotor induction machine provides beneficial features for natural gas compressor technology. The mechanical robustness of the machine enables its use in an integrated motor-compressor. The technology uses a centrifugal compressor, which is mounted on the same shaft with the high-speed electrical machine driving it. No gearbox is needed as the speed is determined by the frequency converter. The cooling is provided by the process gas, which flows through the motor and is capable of transferring the heat away from the motor. The technology has been used in the compressors in the natural gas supply chain in the central Europe. New areas of application include natural gas compressors working at the wellheads of the subsea gas reservoir. A key challenge for the design of such a motor is the resistance of the stator insulation to the raw natural gas from the well. The gas contains water and heavy hydrocarbon compounds and it is far harsher than the sales gas in the natural gas supply network. The objective of this doctoral thesis is to discuss the resistance of the insulation to the raw natural gas and the phenomena degrading the insulation. The presence of partial discharges is analyzed in this doctoral dissertation. The breakdown voltage of the gas is measured as a function of pressure and gap distance. The partial discharge activity is measured on small samples representing the windings of the machine. The electrical field behavior is also modeled by finite element methods. Based on the measurements it has been concluded that the discharges are expected to disappear at gas pressures above 4 - 5 bar. The disappearance of discharges is caused by the breakdown strength of the gas, which increases as the pressure increases. Based on the finite element analysis, the physical length of a discharge seen in the PD measurements at atmospheric pressure was approximated to be 40 - 120 mum. The chemical aging of the insulation when exposed to raw

  3. Humidity effects on wire insulation breakdown strength.

    Energy Technology Data Exchange (ETDEWEB)

    Appelhans, Leah

    2013-08-01

    Methods for the testing of the dielectric breakdown strength of insulation on metal wires under variable humidity conditions were developed. Two methods, an ASTM method and the twisted pair method, were compared to determine if the twisted pair method could be used for determination of breakdown strength under variable humidity conditions. It was concluded that, although there were small differences in outcomes between the two testing methods, the non-standard method (twisted pair) would be appropriate to use for further testing of the effects of humidity on breakdown performance. The dielectric breakdown strength of 34G copper wire insulated with double layer Poly-Thermaleze/Polyamide-imide insulation was measured using the twisted pair method under a variety of relative humidity (RH) conditions and exposure times. Humidity at 50% RH and below was not found to affect the dielectric breakdown strength. At 80% RH the dielectric breakdown strength was significantly diminished. No effect for exposure time up to 140 hours was observed at 50 or 80%RH.

  4. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

    2016-04-25

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  5. A flexible Li-ion battery with design towards electrodes electrical insulation

    Science.gov (United States)

    Vieira, E. M. F.; Ribeiro, J. F.; Sousa, R.; Correia, J. H.; Goncalves, L. M.

    2016-08-01

    The application of micro electromechanical systems (MEMS) technology in several consumer electronics leads to the development of micro/nano power sources with high power and MEMS integration possibility. This work presents the fabrication of a flexible solid-state Li-ion battery (LIB) (~2.1 μm thick) with a design towards electrodes electrical insulation, using conventional, low cost and compatible MEMS fabrication processes. Kapton® substrate provides flexibility to the battery. E-beam deposited 300 nm thick Ge anode was coupled with LiCoO2/LiPON (cathode/solid-state electrolyte) in a battery system. LiCoO2 and LiPON films were deposited by RF-sputtering with a power source of 120 W and 100 W, respectively. LiCoO2 film was annealed at 400 °C after deposition. The new design includes Si3N4 and LiPO thin-films, providing electrode electrical insulation and a battery chemical stability safeguard, respectively. Microstructure and battery performance were investigated by scanning electron microscopy, electric resistivity and electrochemical measurements (open circuit potential, charge/discharge cycles and electrochemical impedance spectroscopy). A rechargeable thin-film and lightweight flexible LIB using MEMS processing compatible materials and techniques is reported.

  6. Semiconductor of spinons: from Ising band insulator to orthogonal band insulator.

    Science.gov (United States)

    Farajollahpour, T; Jafari, S A

    2018-01-10

    We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the 'ARPES-dark' state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

  7. Semiconductor of spinons: from Ising band insulator to orthogonal band insulator

    Science.gov (United States)

    Farajollahpour, T.; Jafari, S. A.

    2018-01-01

    We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the ‘ARPES-dark’ state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

  8. Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures

    Directory of Open Access Journals (Sweden)

    Michael E. Flatté

    2017-05-01

    Full Text Available A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic materials appear attractive, however the effects in current materials occur at very large voltages or at low temperatures. Here the potential of a new class of hybrid multiferroic materials is described, consisting of a topological insulator adjacent to a magnetic insulator, for which an applied electric field reorients the magnetization. As these materials lack conducting states at the chemical potential in their bulk, no dissipative charge currents flow in the bulk. Surface states at the interface, if present, produce effects similar to surface recombination currents in bipolar devices, but can be passivated using magnetic doping. Even without conducting states at the chemical potential, for a topological insulator there is a finite spin Hall conductivity provided by filled bands below the chemical potential. Spin accumulation at the interface with the magnetic insulator provides a torque on the magnetization. Properly timed voltage pulses can thus reorient the magnetic moment with only the flow of charge current required in the leads to establish the voltage. If the topological insulator is sufficiently thick the resulting low capacitance requires little charge current.

  9. Thin film heat flux sensor for Space Shuttle Main Engine turbine environment

    Science.gov (United States)

    Will, Herbert

    1991-01-01

    The Space Shuttle Main Engine (SSME) turbine environment stresses engine components to their design limits and beyond. The extremely high temperatures and rapid temperature cycling can easily cause parts to fail if they are not properly designed. Thin film heat flux sensors can provide heat loading information with almost no disturbance of gas flows or of the blade. These sensors can provide steady state and transient heat flux information. A thin film heat flux sensor is described which makes it easier to measure small temperature differences across very thin insulating layers.

  10. Reentrant Metal-Insulator Transitions in Silicon -

    Science.gov (United States)

    Campbell, John William M.

    This thesis describes a study of reentrant metal -insulator transitions observed in the inversion layer of extremely high mobility Si-MOSFETs. Magneto-transport measurements were carried out in the temperature range 20mK-4.2 K in a ^3He/^4 He dilution refrigerator which was surrounded by a 15 Tesla superconducting magnet. Below a melting temperature (T_{M}~500 mK) and a critical electron density (n_{s }~9times10^{10} cm^{-2}), the Shubnikov -de Haas oscillations in the diagonal resistivity enormous maximum values at the half filled Landau levels while maintaining deep minima corresponding to the quantum Hall effect at filled Landau levels. At even lower electron densities the insulating regions began to spread and eventually a metal-insulator transition could be induced at zero magnetic field. The measurement of extremely large resistances in the milliKelvin temperature range required the use of very low currents (typically in the 10^ {-12} A range) and in certain measurements minimizing the noise was also a consideration. The improvements achieved in these areas through the use of shielding, optical decouplers and battery operated instruments are described. The transport signatures of the insulating state are considered in terms of two basic mechanisms: single particle localization with transport by variable range hopping and the formation of a collective state such as a pinned Wigner crystal or electron solid with transport through the motion of bound dislocation pairs. The experimental data is best described by the latter model. Thus the two dimensional electron system in these high mobility Si-MOSFETs provides the first and only experimental demonstration to date of the formation of an electron solid at zero and low magnetic fields in the quantum limit where the Coulomb interaction energy dominates over the zero point oscillation energy. The role of disorder in favouring either single particle localization or the formation of a Wigner crystal is explored by

  11. Performance of antisolar insulated roof system

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Irshad [Alternative Energy Development Board (AEDB), House No. 1, Main Nazimuddin Road, F-10/4, Islamabad (Pakistan)

    2010-01-15

    Rooms with concrete slab roofs directly exposed to the sun become unbearably hot during summer and very cold during winter. Huge amounts of energy are required to keep them comfortable. Application of thermal insulation on roofs significantly reduces energy required for heating and cooling. The effectiveness of roof insulations may be further enhanced if a layer of antisolar coating is applied on top of the insulation. The antisolar coating reflects most of the incident sunlight and prevents the roof from heating up. This reduces the daily cycles of thermal expansion and contraction which cause cracks in the roof slabs for the rainwater to leak through. The antisolar coating prolongs the useful life of the building structure as well as the life of the insulation that evaporates with heat. The method of application of the antisolar coating has been specially developed to eliminate thermal bridges formed between the edges of the tiles. This report presents the results of an experiment conducted at the Attock Refinery Limited (ARL) Rawalpindi to assess the performance of the antisolar insulated roof system. Record of the room temperature before and after the installation of the system shows a significant reduction in the indoor temperature. The room occupants, who used to experience a very high thermal stress after 10:30 am in spite of the 1.5-ton air conditioner operating in the room, felt much relieved after the installation. They had to turn back the thermostat of the air conditioner and even had to switch it off occasionally. A detailed thermal analysis of the room shows that cost of an antisolar system is paid back in less than a year in the form of savings of energy required for air-conditioning in summer and for gas heating in winter. In addition, the system prevents the addition of 150 kg per year of green house gases to the atmosphere for each square meter of the area covered by the system. It also provides a quieter environment by reducing the operational

  12. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  13. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  14. Cryogenic Insulation Standard Data and Methodologies Project

    Science.gov (United States)

    Summerfield, Burton; Thompson, Karen; Zeitlin, Nancy; Mullenix, Pamela; Fesmire, James; Swanger, Adam

    2015-01-01

    Extending some recent developments in the area of technical consensus standards for cryogenic thermal insulation systems, a preliminary Inter-Laboratory Study of foam insulation materials was performed by NASA Kennedy Space Center and LeTourneau University. The initial focus was ambient pressure cryogenic boil off testing using the Cryostat-400 flat-plate instrument. Completion of a test facility at LETU has enabled direct, comparative testing, using identical cryostat instruments and methods, and the production of standard thermal data sets for a number of materials under sub-ambient conditions. The two sets of measurements were analyzed and indicate there is reasonable agreement between the two laboratories. Based on cryogenic boiloff calorimetry, new equipment and methods for testing thermal insulation systems have been successfully developed. These boiloff instruments (or cryostats) include both flat plate and cylindrical models and are applicable to a wide range of different materials under a wide range of test conditions. Test measurements are generally made at large temperature difference (boundary temperatures of 293 K and 78 K are typical) and include the full vacuum pressure range. Results are generally reported in effective thermal conductivity (ke) and mean heat flux (q) through the insulation system. The new cryostat instruments provide an effective and reliable way to characterize the thermal performance of materials under subambient conditions. Proven in through thousands of tests of hundreds of material systems, they have supported a wide range of aerospace, industry, and research projects. Boiloff testing technology is not just for cryogenic testing but is a cost effective, field-representative methodology to test any material or system for applications at sub-ambient temperatures. This technology, when adequately coupled with a technical standards basis, can provide a cost-effective, field-representative methodology to test any material or system

  15. Thermal insulation product for insulation, especially in nuclear power engineering, and method of its production

    International Nuclear Information System (INIS)

    Veselovsky, P.; Zink, S.; Balacek, P.; Mares, I.

    1989-01-01

    The insulation consists of a sewn fabric cover made of inorganic fibers, in which the fiber filling is reinforced mechanically by dense point interweaving. The inorganic fibers, 1 to 5 μm in diameter, consist of min. 97 wt.% mixture of aluminium and silicon oxides in the vitreous state. The fibers making up the cover consist of min. 95% silicon, aluminium, calcium, magnesium and boron oxides in the vitreous state; the rest can consist of alloy steel fibres. The bulk density of the insulation is 70 to 150 kg/m 3 . The product is highly resistant to temperature and to the action of chemicals, water, and acid and alkaline deactivation solutions. Its manufacture is fast and undemanding. It is designed for thermal insulation of pipes, tanks and valves in nuclear power plants. (M.D.). 2 figs

  16. Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

    Science.gov (United States)

    Alimardani, N.; Conley, J. F.

    2013-09-01

    We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

  17. Radiation transmission type pipe wall thinning detection device and measuring instruments utilizing ionizing radiation

    International Nuclear Information System (INIS)

    Higashi, Yasuhiko

    2009-01-01

    We developed the device to detect thinning of pipe thorough heat insulation in Power Plant, etc, even while the plant is under operation. It is necessary to test many parts of many pipes for pipe wall thinning management, but it is difficult within a limited time of the routine test. This device consists of detector and radiation source, which can detect the pipe (less than 500 mm in external diameter, less than 50 mm in thickness) with 1.6%-reproducibility (in a few-minutes measurement), based on the attenuation rate. Operation is easy and effective without removing the heat insulation. We will expand this thinning detection system, and contribute the safety of the Plant. (author)

  18. Advances in Thermal Insulation. Vacuum Insulation Panels and Thermal Efficiency to Reduce Energy Usage in Buildings

    Energy Technology Data Exchange (ETDEWEB)

    Thorsell, Thomas

    2012-07-01

    We are coming to realize that there is an urgent need to reduce energy usage in buildings and it has to be done in a sustainable way. This thesis focuses on the performance of the building envelope; more precisely thermal performance of walls and super insulation material in the form of vacuum insulation. However, the building envelope is just one part of the whole building system, and super insulators have one major flaw: they are easily adversely affected by other problems in the built environment. Vacuum Insulation Panels are one fresh addition to the arsenal of insulation materials available to the building industry. They are composite material with a core and an enclosure which, as a composite, can reach thermal conductivities as low as 0.004 W/(mK). However, the exceptional performance relies on the barrier material preventing gas permeation, maintaining a near vacuum into the core and a minimized thermal bridge effect from the wrapping of barrier material round the edge of a panel. A serpentine edge is proposed to decrease the heat loss at the edge. Modeling and testing shows a reduction of 60 % if a reasonable serpentine edge is used. A diffusion model of permeation through multilayered barrier films with metallization coatings was developed to predict ultimate service life. The model combines numerical calculations with analytical field theory allowing for more precise determination than current models. The results using the proposed model indicate that it is possible to manufacture panels with lifetimes exceeding 50 years with existing manufacturing. Switching from the component scale to the building scale; an approach of integrated testing and modeling is proposed. Four wall types have been tested in a large range of environments with the aim to assess the hydrothermal nature and significance of thermal bridges and air leakages. The test procedure was also examined as a means for a more representative performance indicator than R-value (in USA). The

  19. Defect design of insulation systems for photovoltaic modules

    Science.gov (United States)

    Mon, G. R.

    1981-01-01

    A defect-design approach to sizing electrical insulation systems for terrestrial photovoltaic modules is presented. It consists of gathering voltage-breakdown statistics on various thicknesses of candidate insulation films where, for a designated voltage, module failure probabilities for enumerated thickness and number-of-layer film combinations are calculated. Cost analysis then selects the most economical insulation system. A manufacturing yield problem is solved to exemplify the technique. Results for unaged Mylar suggest using fewer layers of thicker films. Defect design incorporates effects of flaws in optimal insulation system selection, and obviates choosing a tolerable failure rate, since the optimization process accomplishes that. Exposure to weathering and voltage stress reduces the voltage-withstanding capability of module insulation films. Defect design, applied to aged polyester films, promises to yield reliable, cost-optimal insulation systems.

  20. Sheath insulator final test report, TFE Verification Program

    International Nuclear Information System (INIS)

    1994-07-01

    The sheath insulator in a thermionic cell has two functions. First, the sheath insulator must electrically isolate the collector form the outer containment sheath tube that is in contact with the reactor liquid metal coolant. Second, The sheath insulator must provide for high uniform thermal conductance between the collector and the reactor coolant to remove away waste heat. The goals of the sheath insulator test program were to demonstrate that suitable ceramic materials and fabrication processes were available, and to validate the performance of the sheath insulator for TFE-VP requirements. This report discusses the objectives of the test program, fabrication development, ex-reactor test program, in-reactor test program, and the insulator seal specifications